TWI785197B - Semiconductor device manufacturing method and film adhesive - Google Patents

Semiconductor device manufacturing method and film adhesive Download PDF

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TWI785197B
TWI785197B TW108103160A TW108103160A TWI785197B TW I785197 B TWI785197 B TW I785197B TW 108103160 A TW108103160 A TW 108103160A TW 108103160 A TW108103160 A TW 108103160A TW I785197 B TWI785197 B TW I785197B
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film
adhesive
semiconductor element
component
semiconductor device
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TW108103160A
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TW201936829A (en
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山崎智陽
中村祐樹
橋本慎太郎
菊地健太
舛野大輔
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日商昭和電工材料股份有限公司
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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
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    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
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    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
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    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
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  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)
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Abstract

本發明是有關於一種半導體裝置的製造方法，其包括：第一黏晶步驟，將第一半導體元件經由第一導線而電性連接於基板上；層壓步驟，於較第一半導體元件的面積更大的第二半導體元件的單面上，貼附100℃下、0.1秒後的剪切應力緩和率為40%～85%的膜狀接著劑；以及第二黏晶步驟，以膜狀接著劑覆蓋第一半導體元件的方式載置貼附有膜狀接著劑的第二半導體元件，並壓接膜狀接著劑，藉此而將第一導線及第一半導體元件埋入膜狀接著劑。The present invention relates to a manufacturing method of a semiconductor device, which includes: a first die-bonding step, electrically connecting a first semiconductor element to a substrate via a first wire; Attach a film-like adhesive with a shear stress relaxation rate of 40% to 85% at 100°C for 0.1 second on one side of the larger second semiconductor element; The second semiconductor element on which the film-like adhesive is attached is placed in such a manner that the first semiconductor element is covered with the agent, and the film-like adhesive is pressed, thereby embedding the first wire and the first semiconductor element into the film-like adhesive.

Description

半導體裝置的製造方法及膜狀接著劑Semiconductor device manufacturing method and film adhesive

本發明是有關於一種半導體裝置的製造方法及膜狀接著劑。 The present invention relates to a method for manufacturing a semiconductor device and a film adhesive.

已知有一種可獲得能夠填充因半導體裝置中的基板的配線、附設於半導體晶片的線(wire)等所產生的凹凸的線埋入型半導體裝置的接著片(例如專利文獻1及專利文獻2)。為了於凹凸填充時顯現高流動性，該接著片含有熱硬化性成分作為主成分。 There is known a bonding sheet of a wire-embedded semiconductor device capable of filling the unevenness generated by the wiring of the substrate in the semiconductor device, the wire attached to the semiconductor wafer, etc. (for example, Patent Document 1 and Patent Document 2 ). This adhesive sheet contains a thermosetting component as a main component in order to exhibit high fluidity during uneven filling.

近年來，此種線埋入型半導體裝置的動作的高速化受到重視。先前，將控制半導體裝置的動作的控制器晶片(controller chip)配置於積層的半導體元件的最上段，但為了實現動作的高速化，正在開發於最下段配置控制器晶片的半導體裝置的封裝技術。作為此種封裝的形態之一，使積層為多段的半導體元件中，壓接第二段的半導體元件時所使用的膜狀接著劑較厚，而於該膜狀接著劑內部埋入控制器晶片的封裝體受到矚目。對於用於此種用途的膜狀接著劑而言，要求可埋入控制器晶片、連接於控制器晶片的線、因基板表面的凹凸而產生的階差等的高流動性。 In recent years, attention has been paid to speeding up the operation of such wire-embedded semiconductor devices. Conventionally, a controller chip (controller chip) that controls the operation of a semiconductor device is placed on the uppermost stage of a stacked semiconductor element, but in order to achieve high-speed operation, semiconductor device packaging technology that places a controller chip on the lowermost stage is being developed. As one form of this type of packaging, the film-like adhesive used to press-bond the second-stage semiconductor element among the semiconductor elements stacked in multiple stages is thicker, and the controller chip is embedded in the film-like adhesive. The package has attracted attention. A film-like adhesive used in such applications requires high fluidity capable of embedding a controller chip, wires connected to the controller chip, and steps due to unevenness of the substrate surface.

[現有技術文獻] [Prior art literature]

[專利文獻] [Patent Document]

專利文獻1：國際公開第2005/103180號 Patent Document 1: International Publication No. 2005/103180

專利文獻2：日本專利特開2009-120830號公報 Patent Document 2: Japanese Patent Laid-Open No. 2009-120830

然而，如專利文獻1及專利文獻2所記載的接著片般，若使用特徵在於為了確保埋入性而僅硬化前的流動性高的接著片，則有產生在壓接時接著片的一部分自半導體元件的壓接面端部露出的被稱為滲出(bleed)的現象之虞。若發生滲出，則存在污染半導體元件自身及周邊電路的問題。 However, like the adhesive sheets described in Patent Document 1 and Patent Document 2, if an adhesive sheet characterized in that it has high fluidity only before hardening in order to ensure embedding properties is used, a part of the adhesive sheet may be automatically damaged during crimping. There is a risk of a phenomenon called bleed where the end portion of the crimping surface of the semiconductor element is exposed. When bleeding occurs, there is a problem of contaminating the semiconductor element itself and peripheral circuits.

因此，本發明的目的在於提供一種能夠獲得抑制壓接時的滲出、並且連接可靠性優異的半導體裝置的半導體裝置的製造方法。另外，本發明的目的在於提供一種該製造方法中可使用的膜狀接著劑。 Accordingly, an object of the present invention is to provide a semiconductor device manufacturing method capable of suppressing bleeding during crimping and obtaining a semiconductor device having excellent connection reliability. Moreover, the object of this invention is to provide the film-form adhesive agent which can be used for this manufacturing method.

本發明提供一種半導體裝置的製造方法，其包括：第一黏晶(die bond)步驟，將第一半導體元件經由第一導線而電性連接於基板上；層壓步驟，於較第一半導體元件的面積更大的第二半導體元件的單面上，貼附100℃下、0.1秒後的剪切應力緩和率為40%~85%的膜狀接著劑；以及第二黏晶步驟，以膜狀接著劑覆蓋第一半導體元件的方式載置貼附有膜狀接著劑的第二半導體元件，並壓接膜狀接著劑，藉此而將第一導線及第一半導體元件埋入膜狀接著劑。 The present invention provides a method for manufacturing a semiconductor device, which includes: a first die bond step of electrically connecting a first semiconductor element to a substrate via a first wire; a lamination step of comparing the first semiconductor element Attach a film-like adhesive with a shear stress relaxation rate of 40% to 85% at 100°C for 0.1 second on one side of the second semiconductor element with a larger area; Place the second semiconductor element with the film-shaped adhesive covering the first semiconductor element, and press the film-shaped adhesive to bury the first wire and the first semiconductor element in the film-shaped adhesive. agent.

根據本發明，能夠獲得抑制壓接時的滲出，並且連接可 靠性優異的半導體裝置。更具體而言，藉由使用100℃下、0.1秒後的剪切應力緩和率為40%以上的膜狀接著劑，可追隨線、半導體元件等的形狀，從而能夠確保埋入性。另外，藉由使用剪切應力緩和率為85%以下的膜狀接著劑，可於壓接時保留膜形狀，從而能夠抑制滲出。 According to the present invention, it is possible to obtain suppressed bleeding at the time of crimping, and the connection can be A semiconductor device with excellent reliability. More specifically, by using a film adhesive having a shear stress relaxation rate of 40% or more after 0.1 second at 100° C., it is possible to follow the shape of wires, semiconductor elements, and the like, thereby ensuring embedding properties. In addition, by using a film-like adhesive having a shear stress relaxation rate of 85% or less, the shape of the film can be retained during crimping, and bleeding can be suppressed.

本發明中，所謂100℃下、0.1秒後的剪切應力緩和率是指：將膜狀接著劑自室溫升溫至100℃後，賦予10%的應變且經過0.1秒後測定剪切應力，並以初期應力將所測定的剪切應力歸一化而獲得者。升溫速度亦依存於所使用的測定裝置的規格(spec)，可以10℃/分鐘~60℃/分鐘的範圍適當設定。剪切應力緩和率的測定中可使用動態黏彈性測定裝置。再者，所謂剪切應力緩和率為X%，是指當將初期應力(剛剛賦予應變後的應力)設為100%時，X%的應力隨時間經過而得到緩和。因此，100-剪切應力緩和率(%)=剪切應力殘存率(%)。 In the present invention, the shear stress relaxation rate at 100° C. after 0.1 second means that after heating the film adhesive from room temperature to 100° C., applying a strain of 10%, and measuring the shear stress after 0.1 second, and It is obtained by normalizing the measured shear stress with the initial stress. The temperature increase rate also depends on the specification (spec) of the measuring device used, and can be appropriately set in the range of 10°C/min to 60°C/min. A dynamic viscoelasticity measurement device can be used for the measurement of the shear stress relaxation rate. It should be noted that the shear stress relaxation rate of X% means that when the initial stress (stress immediately after straining) is set to 100%, X% of the stress is relaxed over time. Therefore, 100-shear stress relaxation rate (%)=shear stress residual rate (%).

本發明中，較佳為膜狀接著劑的120℃下的剪切黏度為5000Pa．s以下。藉此，容易獲得良好的埋入性。 In the present invention, the shear viscosity at 120°C of the film adhesive is preferably 5000Pa. below s. Thereby, good embedability can be easily obtained.

本發明中，較佳為膜狀接著劑包含丙烯酸樹脂及環氧樹脂。藉由併用熱塑性成分及熱硬化成分，而容易獲得良好的埋入性與熱硬化性。 In the present invention, it is preferable that the film-like adhesive contains an acrylic resin and an epoxy resin. By using thermoplastic components and thermosetting components together, it is easy to obtain good embedding properties and thermosetting properties.

本發明中，較佳為膜狀接著劑包含無機填料及有機填料的至少一者。藉此，膜狀接著劑的操作性等提升。 In this invention, it is preferable that a film adhesive agent contains at least one of an inorganic filler and an organic filler. Thereby, the handleability etc. of a film adhesive agent improve.

另外，本發明提供一種膜狀接著劑，其於第一半導體元 件經由第一導線而電性連接於基板上，並且於第一半導體元件上壓接較第一半導體元件的面積更大的第二半導體元件而成的半導體裝置中，用於壓接第二半導體元件並且埋入第一導線及第一半導體元件，且100℃下、0.1秒後的剪切應力緩和率為40%~85%。藉由使用本發明的膜狀接著劑，能夠獲得抑制壓接時的滲出，並且連接可靠性優異的半導體裝置。 In addition, the present invention provides a film-like adhesive, which is applied to the first semiconductor element The component is electrically connected to the substrate through the first wire, and the second semiconductor element with a larger area than the first semiconductor element is crimped on the first semiconductor element, and is used for crimping the second semiconductor element. The element is embedded with the first wire and the first semiconductor element, and the shear stress relaxation rate after 0.1 second at 100° C. is 40%-85%. By using the film adhesive of the present invention, bleeding during crimping can be suppressed and a semiconductor device excellent in connection reliability can be obtained.

本發明的膜狀接著劑中，較佳為120℃下的剪切黏度為5000Pa．s以下。 In the film adhesive of the present invention, the shear viscosity at 120°C is preferably 5000Pa. below s.

本發明的膜狀接著劑較佳為包含丙烯酸樹脂及環氧樹脂。 The film adhesive of the present invention preferably contains an acrylic resin and an epoxy resin.

本發明的膜狀接著劑較佳為包含無機填料及有機填料的至少一者。 It is preferable that the film adhesive agent of this invention contains at least one of an inorganic filler and an organic filler.

根據本發明，可提供一種能夠獲得抑制壓接時的滲出、並且連接可靠性優異的半導體裝置的半導體裝置的製造方法。另外，根據本發明，可提供一種該製造方法中可使用的膜狀接著劑。 According to the present invention, it is possible to provide a method of manufacturing a semiconductor device capable of obtaining a semiconductor device that suppresses bleeding during crimping and has excellent connection reliability. Moreover, according to this invention, the film-form adhesive agent which can be used for this manufacturing method is provided.

10:膜狀接著劑 10: Film adhesive

14:基板 14: Substrate

20:基材膜 20: Substrate film

30:覆蓋膜 30: Cover film

40:基材膜 40: Substrate film

41:接著劑 41: Adhesive

42:樹脂(密封材) 42: resin (sealing material)

50:黏著劑層 50: Adhesive layer

60:切割帶 60: Cutting tape

84、94:電路圖案 84, 94: circuit patterns

88:第一導線 88:First wire

90:有機基板 90: Organic substrate

98:第二導線 98:Second wire

100、110、120、130:接著片 100, 110, 120, 130: splice

200:半導體裝置 200: Semiconductor device

Wa:第一半導體元件 Wa: the first semiconductor element

Waa:第二半導體元件 Waa: Second semiconductor element

圖1是表示本發明的實施形態的膜狀接著劑的圖。 Fig. 1 is a diagram showing a film adhesive according to an embodiment of the present invention.

圖2是表示接著片的圖。 Fig. 2 is a diagram showing an adhesive sheet.

圖3是表示另一接著片的圖。 Fig. 3 is a diagram showing another adhesive sheet.

圖4是表示又一接著片的圖。 Fig. 4 is a diagram showing still another bonding sheet.

圖5是表示又一接著片的圖。 Fig. 5 is a diagram showing still another bonding sheet.

圖6是表示半導體裝置的圖。 FIG. 6 is a diagram showing a semiconductor device.

圖7是表示本發明的實施形態的半導體裝置的製造方法的圖。 FIG. 7 is a diagram showing a method of manufacturing a semiconductor device according to an embodiment of the present invention.

圖8是表示圖7的後續步驟的圖。 FIG. 8 is a diagram showing steps subsequent to FIG. 7 .

圖9是表示圖8的後續步驟的圖。 FIG. 9 is a diagram showing steps subsequent to FIG. 8 .

圖10是表示圖9的後續步驟的圖。 FIG. 10 is a diagram showing steps subsequent to FIG. 9 .

圖11是表示圖10的後續步驟的圖。 FIG. 11 is a diagram showing steps subsequent to FIG. 10 .

以下，參照圖式來對本發明的較佳實施形態進行詳細說明。於以下的說明中，對相同或相當部分標註相同符號，並省略重複的說明。另外，上下左右等位置關係只要無特別說明，則是指基於圖式所示的位置關係者。進而，圖式的尺寸比率並不限於圖示的比率。再者，所謂本說明書中的「(甲基)丙烯酸」是指「丙烯酸」及與其相對應的「甲基丙烯酸」。 Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. In the following description, the same or corresponding parts are assigned the same symbols, and redundant descriptions are omitted. In addition, unless otherwise specified, positional relationships such as up, down, left, and right mean those based on the positional relationships shown in the drawings. Furthermore, the dimensional ratios in the drawings are not limited to the ratios shown in the drawings. In addition, "(meth)acrylic acid" in this specification means "acrylic acid" and the corresponding "methacrylic acid."

(膜狀接著劑) (film adhesive)

圖1是示意性表示本實施形態的膜狀接著劑10的剖面圖。膜狀接著劑10為熱硬化性，且是將經過半硬化(B階段)狀態，而於硬化處理後可呈完全硬化物(C階段)狀態的接著劑組成物成形為膜狀而成者。 FIG. 1 is a cross-sectional view schematically showing a film adhesive 10 according to this embodiment. The film-like adhesive 10 is thermosetting, and is obtained by molding an adhesive composition that is in a semi-cured (B-stage) state and fully cured (C-stage) state after curing treatment into a film.

膜狀接著劑10的100℃下、0.1秒後的剪切應力緩和率為40%~85%。就更容易獲得抑制滲出、並且連接可靠性優異的半 導體裝置的觀點而言，剪切應力緩和率較佳為50%~80%，更佳為60%~70%。再者，如下文所述，剪切應力緩和率能夠藉由調整(a)成分~(f)成分的種類及量來進行調整。 The shear stress relaxation rate of the film adhesive 10 at 100° C. after 0.1 second is 40% to 85%. It is easier to obtain semi-conductors that suppress bleeding and have excellent connection reliability. From the viewpoint of the conductor device, the shear stress relaxation rate is preferably 50% to 80%, more preferably 60% to 70%. In addition, the shear stress relaxation rate can be adjusted by adjusting the kind and quantity of (a) component - (f) component as mentioned below.

膜狀接著劑10較佳為120℃下的剪切黏度為5000Pa．s以下。就更容易獲得良好的埋入性的觀點而言，剪切黏度更佳為3000Pa．s以下。剪切黏度的下限並無特別限定，就抑制過度的流動性的觀點而言，可設為200Pa．s。剪切黏度例如可使用動態黏彈性測定裝置進行測定。 The film adhesive 10 preferably has a shear viscosity of 5000Pa at 120°C. below s. From the point of view that it is easier to obtain good embedding, the shear viscosity is more preferably 3000Pa. below s. The lower limit of the shear viscosity is not particularly limited, but may be 200 Pa from the viewpoint of suppressing excessive fluidity. s. The shear viscosity can be measured, for example, using a dynamic viscoelasticity measuring device.

膜狀接著劑10的含有成分並無特別限定，例如可包含：(a)熱硬化性成分、(b)熱塑性成分、(c)無機填料、(d)有機填料、(e)硬化促進劑、(f)其他成分等。藉由調整該些(a)成分~(f)成分的種類及量，而可調整膜狀接著劑10的特性。 The components contained in the film adhesive 10 are not particularly limited, and may include, for example: (a) thermosetting components, (b) thermoplastic components, (c) inorganic fillers, (d) organic fillers, (e) hardening accelerators, (f) Other ingredients, etc. The characteristics of the film adhesive 10 can be adjusted by adjusting the kind and quantity of these (a) component - (f) component.

(a)熱硬化性成分 (a) Thermosetting components

作為熱硬化性成分，可列舉熱硬化性樹脂。尤其就安裝半導體元件時所要求的耐熱性及耐濕性的觀點而言，作為熱硬化性成分，較佳為環氧樹脂、酚樹脂等。 As a thermosetting component, a thermosetting resin is mentioned. In particular, epoxy resins, phenol resins, and the like are preferable as thermosetting components from the viewpoint of heat resistance and moisture resistance required when mounting semiconductor elements.

例如，作為環氧樹脂，可使用含芳香環的環氧樹脂、含雜環的環氧樹脂、脂環式環氧樹脂等通常已知的環氧樹脂。另外，環氧樹脂可為多官能環氧樹脂。作為環氧樹脂，具體而言，例如可使用：雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚E型環氧樹脂、使該些雙酚型環氧樹脂改質而成的二官能環氧樹脂、甲酚酚醛清漆型環氧樹脂、雙酚A酚醛清漆型環氧樹脂、茀改質環氧 樹脂、三苯基甲烷型環氧樹脂、聯苯型環氧樹脂、縮水甘油胺型環氧樹脂、萘改質環氧樹脂等。 For example, generally known epoxy resins such as aromatic ring-containing epoxy resins, heterocyclic ring-containing epoxy resins, and alicyclic epoxy resins can be used as the epoxy resin. Additionally, the epoxy resin may be a multifunctional epoxy resin. As the epoxy resin, specifically, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol E type epoxy resin, and those obtained by modifying these bisphenol type epoxy resins can be used, for example. Difunctional epoxy resin, cresol novolac epoxy resin, bisphenol A novolak epoxy resin, fenugreek modified epoxy resin Resin, triphenylmethane type epoxy resin, biphenyl type epoxy resin, glycidylamine type epoxy resin, naphthalene modified epoxy resin, etc.

作為環氧樹脂，例如可列舉：大賽璐股份有限公司製造的賽羅西德(Celloxide)系列、新日化環氧製造股份有限公司製造的YDF系列及YDCN系列、迪愛生(DIC)股份有限公司製造的HP-7000L、普林泰科(Printec)股份有限公司製造的VG-3101L等。 Examples of epoxy resins include Celloxide series manufactured by Daicel Co., Ltd., YDF series and YDCN series manufactured by Nichika Epoxy Manufacturing Co., Ltd., and DIC Co., Ltd. HP-7000L manufactured by Printec Co., Ltd., VG-3101L manufactured by Printec Co., Ltd., and the like.

另外，作為酚樹脂，例如可列舉：酚醛清漆型酚樹脂、新酚型酚樹脂、聯苯型酚樹脂、三苯基甲烷型酚樹脂、利用芳基取代酚環上的氫而成的改質酚樹脂等。再者，作為酚樹脂，就耐熱性的觀點而言，較佳為投入85℃、85%RH的恆溫恆濕槽中48小時後的吸水率為2質量%以下，利用熱重量分析儀(thermogravimetric analyzer，TGA)測定出的350℃下的加熱質量減少率(升溫速度：5℃/min，環境：氮)小於5質量%者。 In addition, examples of phenolic resins include novolak-type phenolic resins, neophenol-type phenolic resins, biphenyl-type phenolic resins, triphenylmethane-type phenolic resins, modified phenolic resins obtained by substituting aryl groups for hydrogen on the phenolic ring. Phenolic resin etc. In addition, as a phenolic resin, it is preferable from the viewpoint of heat resistance that it has a water absorption rate of 2% by mass or less after being placed in a constant temperature and humidity chamber at 85°C and 85%RH for 48 hours. Analyzer, TGA) measured at 350 ℃ heating mass loss rate (heating rate: 5 ℃ / min, environment: nitrogen) is less than 5% by mass.

作為酚樹脂，例如可列舉空氣水(AIR WATER)股份有限公司製造的HE系列、群榮化學工業股份有限公司製造的萊希拓普(Resitop)系列等。 As a phenolic resin, the HE series by Air Water Co., Ltd., the Resitop series by Qunyei Chemical Industry Co., Ltd., etc. are mentioned, for example.

於併用環氧樹脂及酚樹脂來作為(a)熱硬化性成分的情況下，以環氧當量與羥基當量的當量比計，環氧樹脂及酚樹脂的調配比分別較佳為成為0.70/0.30~0.30/0.70，更佳為成為0.65/0.35~0.35/0.65，進而佳為成為0.60/0.40~0.40/0.60，特佳為成為0.60/0.40~0.50/0.50。藉由調配比為所述範圍內，容易獲得 具有優異的硬化性、流動性等的膜狀接著劑10。 When an epoxy resin and a phenol resin are used in combination as (a) the thermosetting component, the compounding ratio of the epoxy resin and the phenol resin is preferably 0.70/0.30 in terms of the equivalent ratio of the epoxy equivalent to the hydroxyl equivalent. ~0.30/0.70, more preferably 0.65/0.35~0.35/0.65, more preferably 0.60/0.40~0.40/0.60, especially preferably 0.60/0.40~0.50/0.50. By blending the ratio within the range, it is easy to obtain Film adhesive 10 with excellent curability, fluidity, etc.

再者，就抑制硬化後的半導體裝置的翹曲的觀點而言，較佳為組合硬化速度不同的熱硬化性樹脂。具體而言，以上所例示的環氧樹脂及酚樹脂中，例如較佳為將(a1)軟化點為60℃以下或常溫下為液體者(只要為硬化後具有接著作用者則並無特別限定)、及(a2)軟化點超過60℃(常溫下為固體)者組合使用。再者，此處所謂的常溫是指5℃~35℃。 Furthermore, from the viewpoint of suppressing warping of the cured semiconductor device, it is preferable to combine thermosetting resins having different curing rates. Specifically, among the epoxy resins and phenol resins exemplified above, for example, those whose softening point is 60° C. or lower or are liquid at room temperature are preferred (there is no particular limitation as long as they have an adhesive effect after hardening) ), and (a2) those whose softening point exceeds 60°C (solid at room temperature) are used in combination. In addition, the so-called normal temperature here refers to 5°C to 35°C.

以(a)成分的總質量為基準，(a1)成分的含量較佳為10質量%~50質量%，更佳為20質量%~40質量%。藉此，容易兼具埋入性及切割(dicing)、拾取(pick-up)等製程適應性。 Based on the total mass of the component (a), the content of the component (a1) is preferably 10% by mass to 50% by mass, more preferably 20% by mass to 40% by mass. In this way, it is easy to have embedding and process adaptability such as dicing and pick-up.

以(a)成分的總質量為基準，(a2)成分的含量較佳為10質量%以上，更佳為15質量%以上。藉此，容易調整製膜性、流動性、應力緩和性等。再者，(a2)成分的含量的上限並無特別限定，以(a)成分的總質量為基準，可設為90質量%。 Based on the total mass of the component (a), the content of the component (a2) is preferably at least 10% by mass, more preferably at least 15% by mass. This makes it easy to adjust film forming properties, fluidity, stress relaxation properties, and the like. In addition, although the upper limit of content of (a2) component is not specifically limited, Based on the gross mass of (a) component, it can be made into 90 mass %.

再者，藉由使用脂環式環氧樹脂來作為(a)成分，而容易將剪切應力緩和率調整為所期望的範圍。於使用脂環式環氧樹脂的情況下，其含量的標準可以(a)成分的總質量為基準而設為30質量%~100質量%(即可為(a)成分全部為脂環式環氧樹脂)。 Furthermore, by using an alicyclic epoxy resin as (a) component, it becomes easy to adjust a shear stress relaxation rate to a desired range. In the case of using an alicyclic epoxy resin, the standard of its content can be set as 30% by mass to 100% by mass based on the total mass of the (a) component (that is, all of the (a) components are alicyclic rings. oxygen resin).

(a)成分的重量平均分子量較佳為200~5000。藉此而容易將剪切應力緩和率調整為所期望的範圍。 (a) It is preferable that the weight average molecular weight of a component is 200-5000. This makes it easy to adjust the shear stress relaxation rate to a desired range.

(b)熱塑性成分 (b) thermoplastic components

作為(b)熱塑性成分，較佳為併用具有交聯性官能基的單體比率高且分子量低的熱塑性成分、及具有交聯性官能基的單體比率低且分子量高的熱塑性成分。尤其較佳為後者的熱塑性成分包含一定量以上。 As the (b) thermoplastic component, it is preferable to use together a thermoplastic component having a high monomer ratio having a crosslinkable functional group and a low molecular weight, and a thermoplastic component having a low monomer ratio having a crosslinkable functional group and having a high molecular weight. It is especially preferable that the latter thermoplastic component contains a certain amount or more.

作為(b)成分，較佳為作為熱塑性樹脂的丙烯酸樹脂(丙烯酸系樹脂)，進而更佳為玻璃轉移溫度Tg為-50℃~50℃，且將丙烯酸縮水甘油酯、甲基丙烯酸縮水甘油酯等具有環氧基或縮水甘油基作為交聯性官能基的官能性單體聚合而獲得的含環氧基的(甲基)丙烯酸酯共聚物等丙烯酸樹脂。 The component (b) is preferably an acrylic resin (acrylic resin) as a thermoplastic resin, more preferably a glass transition temperature Tg of -50°C to 50°C, and glycidyl acrylate, glycidyl methacrylate Acrylic resins such as epoxy group-containing (meth)acrylate copolymers obtained by polymerizing functional monomers having epoxy groups or glycidyl groups as crosslinkable functional groups.

作為此種丙烯酸樹脂，可使用含環氧基的(甲基)丙烯酸酯共聚物、含環氧基的丙烯酸橡膠等，更佳為含環氧基的丙烯酸橡膠。含環氧基的丙烯酸橡膠是將丙烯酸酯作為主成分，且主要包含丙烯酸丁酯與丙烯腈等的共聚物、丙烯酸乙酯與丙烯腈等的共聚物等的具有環氧基的丙烯酸橡膠。 As such an acrylic resin, epoxy group-containing (meth)acrylate copolymer, epoxy group-containing acrylic rubber, etc. can be used, and epoxy group-containing acrylic rubber is more preferable. The epoxy group-containing acrylic rubber is an epoxy group-containing acrylic rubber mainly containing acrylate as a main component, such as a copolymer of butyl acrylate and acrylonitrile, a copolymer of ethyl acrylate and acrylonitrile, or the like.

再者，作為(b)成分的交聯性官能基，除環氧基以外，亦可列舉醇性或酚性羥基、羧基等交聯性官能基。 In addition, as a crosslinkable functional group of (b) component, besides an epoxy group, crosslinkable functional groups, such as an alcoholic or phenolic hydroxyl group and a carboxyl group, are mentioned.

關於(b)成分，就容易顯現高接著力、另外容易降低150℃/1小時加熱後的拉伸彈性係數的觀點而言，相對於單體單元總量，具有交聯性官能基的單體單元較佳為5莫耳%~15莫耳%，更佳為5莫耳%~10莫耳%。 As for the component (b), from the viewpoint of easily developing high adhesive force and easily lowering the tensile modulus of elasticity after heating at 150°C/1 hour, a monomer having a crosslinkable functional group relative to the total amount of monomer units The unit is preferably 5 mol % to 15 mol %, more preferably 5 mol % to 10 mol %.

(b)成分的重量平均分子量較佳為20萬~100萬，更佳為50萬~100萬。藉此而容易將剪切應力緩和率調整為所期望 的範圍。另外，尤其是若(b)成分的重量平均分子量為50萬以上，則使成膜性提升的效果更加良好。若(b)成分的重量平均分子量為100萬以下，則容易降低未硬化狀態的膜狀接著劑10的剪切黏度，因而埋入性更良好。另外，存在未硬化狀態的膜狀接著劑10的切削性得到改善，切割的品質變得更良好的情況。 (b) The weight average molecular weight of the component is preferably from 200,000 to 1 million, more preferably from 500,000 to 1 million. This makes it easy to adjust the shear stress relaxation rate to a desired range. Moreover, especially when the weight average molecular weight of (b) component is 500,000 or more, the film-forming property improvement effect becomes more favorable. If the weight average molecular weight of (b) component is 1 million or less, since the shear viscosity of the film adhesive 10 of an uncured state will fall easily, embedding property will become more favorable. In addition, the machinability of the film adhesive 10 in an uncured state may be improved, and the cutting quality may become better.

重量平均分子量是藉由凝膠滲透層析法(Gel Penetration Chromatography，GPC)，使用基於標準聚苯乙烯的校準曲線而獲得的聚苯乙烯換算值。 The weight average molecular weight is a polystyrene conversion value obtained by gel permeation chromatography (Gel Penetration Chromatography, GPC) using a calibration curve based on standard polystyrene.

(b)成分整體的玻璃轉移溫度Tg較佳為-20℃~40℃，更佳為-10℃~30℃。藉此，在切割時膜狀接著劑10容易切斷，因而不易產生樹脂碎屑，容易提高膜狀接著劑10的接著力與耐熱性，另外容易顯現未硬化狀態的膜狀接著劑10的高流動性。 (b) The glass transition temperature Tg of the entire component is preferably -20°C to 40°C, more preferably -10°C to 30°C. Thereby, the film adhesive 10 is easy to cut when cutting, so resin debris is not easily generated, and the adhesive force and heat resistance of the film adhesive 10 are easily improved, and the film adhesive 10 in an uncured state is easy to show high fluidity.

玻璃轉移溫度Tg可使用熱示差掃描熱量儀(例如理學股份有限公司製造的「Thermo Plus 2」)進行測定。 The glass transition temperature Tg can be measured using a thermal differential scanning calorimeter (for example, "Thermo Plus 2" by Rigaku Co., Ltd.).

當將(a)成分設為100質量份時，(b)成分的含量較佳為20質量份~160質量份，更佳為50質量份~120質量份。藉由(b)成分的含量為所述下限值以上，而容易抑制膜狀接著劑10的可撓性的下降，並且於硬化後彈性變低而容易抑制半導體裝置(封裝體)的翹曲。另一方面，藉由(b)成分的含量為所述上限值以下，而使未硬化狀態的膜狀接著劑10的流動性上升，可使埋入性更良好。再者，藉由(b)成分的含量為所述範圍內，而容易將剪切應力緩和率調整為所期望的範圍。 When (a) component is 100 mass parts, content of (b) component becomes like this. Preferably it is 20-160 mass parts, More preferably, it is 50-120 mass parts. When the content of the component (b) is equal to or greater than the lower limit value, it is easy to suppress the decrease in the flexibility of the film adhesive 10, and after curing, the elasticity becomes low, and it is easy to suppress the warpage of the semiconductor device (package). . On the other hand, when content of (b) component is below the said upper limit, the fluidity|fluidity of the film adhesive agent 10 of an uncured state can be raised and embedding property can be made more favorable. Furthermore, when content of (b) component exists in the said range, it becomes easy to adjust a shear stress relaxation rate to a desired range.

(c)無機填料 (c) Inorganic filler

作為(c)成分，就B階段狀態下的膜狀接著劑10的切割性的提升、膜狀接著劑10的操作性的提升、導熱性的提升、剪切黏度(熔融黏度)的調整、觸變性的賦予、接著力的提升等觀點而言，較佳為二氧化矽填料等。 As the component (c), the improvement of the cuttability of the film adhesive 10 in the B-stage state, the improvement of the handleability of the film adhesive 10, the improvement of thermal conductivity, the adjustment of the shear viscosity (melt viscosity), the touch From the viewpoints of imparting denaturation and improving adhesion, silica fillers and the like are preferred.

以提升未硬化狀態的膜狀接著劑10的切割性、充分顯現硬化後的接著力為目的，(c)成分較佳為包含平均粒徑不同的兩種以上的填料。(c)成分例如較佳為包含：以提升未硬化狀態的膜狀接著劑10的切割性為目的的(c1)平均粒徑為0.2μm以上的第一填料；及以充分顯現硬化後的接著力為目的的(c2)平均粒徑小於0.2μm的第二填料。 The component (c) preferably contains two or more types of fillers having different average particle diameters for the purpose of improving the cuttability of the uncured film adhesive 10 and sufficiently expressing the adhesive force after curing. (c) Components, for example, preferably include: (c1) a first filler having an average particle diameter of 0.2 μm or more for the purpose of improving the cuttability of the film adhesive 10 in an uncured state; For the purpose of strength (c2) the second filler having an average particle diameter of less than 0.2 μm.

平均粒徑設為使用雷射繞射式粒度分佈測定裝置，將丙酮作為溶劑進行分析時所獲得的值。關於第一填料及第二填料的平均粒徑，於利用粒度分佈測定裝置進行分析的情況下，在可判別包含各個填料的程度內，更佳為其差大。 The average particle diameter was set to a value obtained when analyzing acetone as a solvent using a laser diffraction particle size distribution analyzer. Regarding the average particle diameters of the first filler and the second filler, when analyzing with a particle size distribution measuring device, it is more preferable that the difference is large to the extent that each filler can be identified.

以(c)成分的總質量為基準，(c1)成分的含量較佳為30質量%以上。藉由(c1)成分的含量為30質量%以上，而容易抑制膜的斷裂性的惡化、未硬化狀態的膜狀接著劑10的流動性的惡化。再者，(c1)成分的含量的上限並無特別限定，以(c)成分的總質量為基準，可設為95質量%。 Based on the total mass of the component (c), the content of the component (c1) is preferably at least 30% by mass. When content of (c1) component is 30 mass % or more, it becomes easy to suppress the deterioration of the fracture|rupture property of a film, and the fluidity deterioration of the film adhesive agent 10 of an uncured state. In addition, although the upper limit of content of (c1)component is not specifically limited, Based on the gross mass of (c)component, it can be made into 95 mass %.

以(c)成分的總質量為基準，(c2)成分的含量較佳為5質量%以上。藉由(c2)成分的含量為5質量%以上，而容易提 升硬化後的接著力。再者，就確保適度的流動性的觀點而言，以(c)成分的總質量為基準，(c2)成分的含量的上限可設為30質量%。 Based on the total mass of the component (c), the content of the component (c2) is preferably 5% by mass or more. By content of (c2) component being 5% by mass or more, it is easy to increase Increase the adhesion after hardening. In addition, the upper limit of content of (c2) component can be made into 30 mass % based on the gross mass of (c) component from a viewpoint of ensuring moderate fluidity.

當將(a)成分設為100質量份時，(c)成分的含量較佳為10質量份~90質量份，更佳為40質量份~70質量份。藉由(c)成分的含量為所述下限值以上，而有容易抑制未硬化狀態的膜狀接著劑10的切割性的惡化、硬化後的接著力的下降的傾向。另一方面，藉由(c)成分的含量為所述上限值以下，而有容易抑制未硬化狀態的膜狀接著劑10的流動性的下降、硬化後的彈性係數的上升的傾向。再者，藉由(c)成分的含量為所述範圍內，而容易將剪切應力緩和率調整為所期望的範圍。 When (a) component is 100 mass parts, content of (c) component becomes like this. Preferably it is 10-90 mass parts, More preferably, it is 40-70 mass parts. When content of (c) component is more than the said lower limit, it exists in the tendency for the deterioration of the cutting property of the film adhesive agent 10 of an unhardened state, and the fall of the adhesive force after hardening to be suppressed easily. On the other hand, when content of (c) component is below the said upper limit, it exists in the tendency which the fall of the fluidity of the unhardened film adhesive 10 and the raise of the elastic coefficient after hardening are suppressed easily. Furthermore, when content of (c)component exists in the said range, it becomes easy to adjust a shear stress relaxation rate to a desired range.

(d)有機填料 (d) organic filler

作為(d)成分，就膜狀接著劑10的切割性的提升、膜狀接著劑10的操作性的提升、剪切黏度(熔融黏度)的調整、接著力的提升、硬化後的應力緩和性等觀點而言，較佳為苯乙烯-聚甲基丙烯酸甲酯(Polymethyl Methacrylate，PMMA)改質橡膠填料、矽酮改質橡膠填料等。就容易充分顯現硬化後的接著力的觀點而言，(d)成分的平均粒徑較佳為0.2μm以下。 As (d) component, the improvement of the cuttability of the film adhesive 10, the improvement of the handleability of the film adhesive 10, the adjustment of the shear viscosity (melt viscosity), the improvement of the adhesive force, and the stress relaxation after curing From the viewpoint of etc., preferred are styrene-polymethyl methacrylate (Polymethyl Methacrylate, PMMA) modified rubber fillers, silicone modified rubber fillers, and the like. The average particle size of the component (d) is preferably 0.2 μm or less from the viewpoint of being easy to sufficiently develop adhesive force after curing.

當將(c)成分設為100質量份時，(d)成分的含量較佳為0質量份~50質量份，更佳為0質量份~30質量份。藉由視需要含有規定量的(d)成分，而有提升埋入性並且容易控制應力緩和率的傾向。 When the (c) component is 100 mass parts, content of (d) component becomes like this. Preferably it is 0-50 mass parts, More preferably, it is 0-30 mass parts. By containing a predetermined amount of component (d) as needed, embedding properties are improved and stress relaxation rate tends to be easily controlled.

(e)硬化促進劑 (e) hardening accelerator

以獲得良好的硬化性為目的，較佳為使用(e)硬化促進劑。作為(e)成分，就反應性的觀點而言，較佳為咪唑系的化合物。再者，若(e)成分的反應性過高，則有藉由膜狀接著劑10的製造步驟中的加熱，不僅剪切黏度容易上升，亦容易引起經時的劣化的傾向。另一方面，若(e)成分的反應性過低，則有膜狀接著劑10的硬化性容易降低的傾向。若膜狀接著劑10未充分硬化便搭載於製品內，則無法獲得充分的接著性，而有可能使半導體裝置的連接可靠性惡化。 For the purpose of obtaining good curability, it is preferable to use (e) a curing accelerator. As (e) component, an imidazole-type compound is preferable from a reactive viewpoint. Furthermore, when the reactivity of the component (e) is too high, not only the shear viscosity tends to increase easily but also tends to cause deterioration over time by heating in the manufacturing step of the film adhesive 10 . On the other hand, when the reactivity of (e) component is too low, the curability of the film adhesive 10 tends to fall easily. If the film adhesive 10 is mounted in a product without being sufficiently cured, sufficient adhesiveness cannot be obtained, and the connection reliability of the semiconductor device may be deteriorated.

藉由含有(e)成分，膜狀接著劑10的硬化性進一步提升。另一方面，於(e)成分的含量過多的情況下，有藉由膜狀接著劑10的製造步驟中的加熱，不僅剪切黏度容易上升，亦容易引起經時的劣化的傾向。就此種觀點而言，當將(a)成分設為100質量份時，(e)成分的含量較佳為0質量份~0.20質量份。 By containing (e) component, the curability of the film adhesive agent 10 improves further. On the other hand, when the content of the component (e) is too large, not only the shear viscosity tends to increase but also tends to cause deterioration over time by heating in the manufacturing step of the film adhesive 10 . From such a viewpoint, when (a) component is 100 mass parts, it is preferable that content of (e) component is 0 mass part - 0.20 mass part.

(f)其他成分 (f) Other ingredients

就接著性提升的觀點而言，除所述成分以外，亦可進而使用適量的本技術領域中可使用的其他成分。作為此種成分，例如可列舉偶合劑。作為偶合劑，可列舉：γ-脲基丙基三乙氧基矽烷、γ-巰基丙基三甲氧基矽烷、3-苯基胺基丙基三甲氧基矽烷、3-(2-胺基乙基)胺基丙基三甲氧基矽烷等。 From the viewpoint of adhesive improvement, other components usable in this technical field may be further used in an appropriate amount in addition to the above-mentioned components. As such a component, a coupling agent is mentioned, for example. As the coupling agent, γ-ureidopropyltriethoxysilane, γ-mercaptopropyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, 3-(2-aminoethyl) base) aminopropyltrimethoxysilane, etc.

(膜狀接著劑) (film adhesive)

膜狀接著劑10例如可藉由以下步驟而獲得：藉由將包含所述 成分的接著劑組成物的清漆塗佈於基材膜上而形成清漆的層的步驟、藉由加熱乾燥而自清漆的層去除溶劑的步驟、將基材膜去除的步驟。 The film adhesive 10 can be obtained, for example, by the following steps: by including the The step of applying the varnish of the adhesive composition of the component on the base film to form a varnish layer, the step of removing the solvent from the varnish layer by heating and drying, and the step of removing the base film.

清漆可將包含所述成分的接著劑組成物在有機溶劑中混合、混煉等來製備。混合及混練可使用通常的攪拌機、擂潰機、三輥磨機、球磨機等分散機。該些機器可適當組合來使用。清漆的塗佈例如可藉由缺角輪塗佈機、模塗機等來進行。清漆的加熱乾燥條件只要為所使用的有機溶劑充分揮發的條件則並無特別限制，例如可設為於60℃~200℃下加熱0.1分鐘~90分鐘。 The varnish can be prepared by mixing, kneading, or the like an adhesive composition containing the above components in an organic solvent. For mixing and kneading, a usual dispersing machine such as a mixer, a beater, a three-roll mill, or a ball mill can be used. These machines can be used in appropriate combination. The coating of the varnish can be performed with, for example, a chip coater, a die coater, or the like. The heat-drying conditions of the varnish are not particularly limited as long as the organic solvent used is sufficiently volatilized. For example, heating at 60° C. to 200° C. for 0.1 minutes to 90 minutes is possible.

作為有機溶劑，只要為可將所述成分均勻地溶解、混煉或分散者則可無限制地使用現有公知者。作為此種溶劑，例如可列舉：丙酮、甲基乙基酮、甲基異丁基酮、環己酮等酮系溶劑；二甲基甲醯胺、二甲基乙醯胺、N-甲基吡咯啶酮、甲苯、二甲苯等。就乾燥速度快、價格低的方面而言，較佳為使用甲基乙基酮、環己酮等。 As the organic solvent, conventionally known ones can be used without limitation as long as the above-mentioned components can be uniformly dissolved, kneaded or dispersed. Examples of such solvents include: ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone; dimethylformamide, dimethylacetamide, N-methyl Pyrrolidone, toluene, xylene, etc. It is preferable to use methyl ethyl ketone, cyclohexanone, etc. from the viewpoint of fast drying speed and low price.

所述基材膜並無特別限制，例如可列舉：聚酯膜(聚對苯二甲酸乙二酯膜等)、聚丙烯膜(定向聚丙烯(Oriented PolyPropylene，OPP)膜等)、聚醯亞胺膜、聚醚醯亞胺膜、聚醚萘二甲酸酯膜、甲基戊烯膜等。 The base film is not particularly limited, for example, polyester film (polyethylene terephthalate film, etc.), polypropylene film (oriented polypropylene (Oriented Polypropylene, OPP) film, etc.), polyamide Amine film, polyetherimide film, polyether naphthalate film, methylpentene film, etc.

為了將第一導線及第一半導體元件、以及基板的配線電路等的凹凸充分埋入，膜狀接著劑10的厚度較佳為20μm~200μm。另外，藉由厚度為20μm以上，而容易獲得充分的接著力， 藉由為200μm以下，而容易滿足半導體裝置的小型化的要求。就此種觀點而言，膜狀接著劑10的厚度更佳為30μm~200μm，進而佳為40μm~150μm。 In order to fully bury the unevenness of the first lead, the first semiconductor element, and the wiring circuit of the substrate, the thickness of the film adhesive 10 is preferably 20 μm to 200 μm. In addition, since the thickness is 20 μm or more, it is easy to obtain sufficient adhesive force, By being 200 μm or less, it is easy to meet the demand for miniaturization of semiconductor devices. From such a viewpoint, the thickness of the film adhesive 10 is more preferably from 30 μm to 200 μm, and more preferably from 40 μm to 150 μm.

作為獲得厚的膜狀接著劑10的方法，可列舉將膜狀接著劑10彼此貼合的方法。 As a method of obtaining the thick film adhesive 10, the method of bonding the film adhesive 10 together is mentioned.

(接著片) (continuing film)

如圖2所示，接著片100為於基材膜20上具有膜狀接著劑10者。接著片100可藉由在獲得膜狀接著劑10的步驟中，不去除基材膜20而獲得。 As shown in FIG. 2 , the adhesive sheet 100 has a film-like adhesive 10 on a base film 20 . The adhesive sheet 100 can be obtained by not removing the base film 20 in the step of obtaining the film adhesive 10 .

如圖3所示，接著片110為於接著片100的與基材膜20為相反側的面上進而具有覆蓋膜30者。作為覆蓋膜30，例如可列舉聚對苯二甲酸乙二酯(polyethylene terephthalate，PET)膜、聚乙烯(polyethylene，PE)膜、OPP膜等。 As shown in FIG. 3 , the adhesive sheet 110 further has a cover film 30 on the surface of the adhesive sheet 100 opposite to the base film 20 . As the cover film 30, a polyethylene terephthalate (PET) film, a polyethylene (polyethylene, PE) film, an OPP film, etc. are mentioned, for example.

膜狀接著劑10亦可積層於切割帶上。藉由使用由此而獲得的切割．黏晶一體型接著片，可一次性進行半導體晶圓上的層壓步驟，能夠實現作業的效率化。 The film adhesive 10 can also be laminated on the dicing tape. By using the cut thus obtained. Die-bonding integrated bonding wafers can perform lamination steps on semiconductor wafers at one time, which can realize work efficiency.

作為切割帶，例如可列舉：聚四氟乙烯膜、聚對苯二甲酸乙二酯膜、聚乙烯膜、聚丙烯膜、聚甲基戊烯膜、聚醯亞胺膜等塑膠膜等。亦可視需要而對切割帶進行底塗處理、UV處理、電暈放電處理、研磨處理、蝕刻處理等表面處理。 Examples of the dicing tape include plastic films such as polytetrafluoroethylene films, polyethylene terephthalate films, polyethylene films, polypropylene films, polymethylpentene films, and polyimide films. Surface treatments such as primer treatment, UV treatment, corona discharge treatment, grinding treatment, and etching treatment can also be performed on the dicing tape as required.

切割帶較佳為具有黏著性者。作為此種切割帶，可列舉對所述塑膠膜賦予黏著性者、於所述塑膠膜的單面設置有黏著劑 層者。 The dicing tape is preferably adhesive. Examples of such dicing tapes include ones that impart adhesiveness to the plastic film, and ones that are provided with an adhesive on one side of the plastic film. layers.

作為此種切割．黏晶一體型接著片，可列舉圖4所示的接著片120及圖5所示的接著片130。如圖4所示，接著片120具有如下結構：將於可確保施加有拉伸張力時的伸長率的基材膜40上設置有黏著劑層50的切割帶60作為支撐基材，且於切割帶60的黏著劑層50上設置有膜狀接著劑10。如圖5所示，接著片130具有接著片120中，於膜狀接著劑10的表面進而設置有基材膜20的結構。 As this cut. Examples of the die-bonding integrated adhesive sheet include the adhesive sheet 120 shown in FIG. 4 and the adhesive sheet 130 shown in FIG. 5 . As shown in FIG. 4 , the bonding sheet 120 has the following structure: a dicing tape 60 with an adhesive layer 50 is provided as a supporting base material on a base film 40 that can ensure elongation when stretching tension is applied, and The film adhesive 10 is provided on the adhesive layer 50 of the tape 60 . As shown in FIG. 5 , the adhesive sheet 130 has a structure in which the base film 20 is further provided on the surface of the film adhesive 10 in the adhesive sheet 120 .

作為基材膜40，可列舉關於切割帶所記載的所述塑膠膜。另外，黏著劑層50例如可使用包含液狀成分及熱塑性成分且具有適度的黏接強度的樹脂組成物來形成。為了獲得切割帶60，可列舉：將該樹脂組成物塗佈於基材膜40上並加以乾燥而形成黏著劑層50的方法；將暫時形成於PET膜等其他膜上的黏著劑層50與基材膜40貼合的方法等。 As the base film 40, the above-mentioned plastic film described about a dicing tape is mentioned. In addition, the adhesive layer 50 can be formed using, for example, a resin composition including a liquid component and a thermoplastic component and having moderate adhesive strength. In order to obtain the dicing tape 60, there may be mentioned: a method of applying the resin composition on the base film 40 and drying it to form the adhesive layer 50; The method of laminating the base film 40, etc.

作為於切割帶60上積層膜狀接著劑10的方法，可列舉：將所述接著劑組成物的清漆直接塗佈於切割帶60上並加以乾燥的方法；將清漆網版印刷至切割帶60上的方法；預先製作膜狀接著劑10，並藉由壓製、熱輥層壓而將其積層於切割帶60上的方法等。就可連續地製造、效率佳的方面而言，較佳為藉由熱輥層壓進行積層。 As a method of laminating the film adhesive 10 on the dicing tape 60, a method of directly coating and drying the varnish of the adhesive composition on the dicing tape 60; screen printing the varnish on the dicing tape 60 The above method; the method of prefabricating the film adhesive 10 and laminating it on the dicing tape 60 by pressing or hot roll lamination, etc. In terms of continuous production and high efficiency, lamination by hot roll lamination is preferable.

切割帶60的厚度並無特別限制，可根據膜狀接著劑10的厚度、切割．黏晶一體型接著片的用途等，基於所屬技術領域中 具有通常知識者的知識而適當地確定。再者，藉由切割帶60的厚度為60μm以上，而有容易抑制操作性的降低、由擴展(expanding)所致的破裂等的傾向。另一方面，藉由切割帶的厚度為180μm以下，而容易兼具經濟性與操作性的優點。 The thickness of the cutting tape 60 is not particularly limited, it can be cut according to the thickness of the film adhesive 10 . The use of die-bonded integrated bonding wafers, etc., based on the technical field properly determined with the knowledge of those of ordinary knowledge. Furthermore, since the thickness of the dicing tape 60 is 60 micrometers or more, it exists in the tendency which the fall of workability, the crack by expanding (expanding), etc. are suppressed easily. On the other hand, since the thickness of the dicing tape is 180 μm or less, it is easy to have both the advantages of economy and operability.

(半導體裝置) (semiconductor device)

圖6是表示半導體裝置的剖面圖。如圖6所示，半導體裝置200是於第一半導體元件Wa上層疊第二半導體元件Waa而成的半導體裝置。詳細而言，是將第一階段的第一半導體元件Wa經由第一導線88而電性連接於基板14，並且於第一半導體元件Wa上，經由膜狀接著劑10而壓接較第一半導體元件Wa的面積更大的第二階段的第二半導體元件Waa，藉此而將第一導線88及第一半導體元件Wa埋入膜狀接著劑10中而成的線埋入型的半導體裝置。另外，半導體裝置200中，進而經由第二導線98而將基板14與第二半導體元件Waa電性連接，並且藉由密封材42而將第二半導體元件Waa密封。 FIG. 6 is a cross-sectional view showing a semiconductor device. As shown in FIG. 6 , the semiconductor device 200 is a semiconductor device in which the second semiconductor element Waa is stacked on the first semiconductor element Wa. Specifically, the first semiconductor element Wa in the first stage is electrically connected to the substrate 14 through the first wire 88, and the first semiconductor element Wa is crimped on the first semiconductor element Wa through the film adhesive 10. The second-stage second semiconductor element Waa having a larger area of the element Wa is a wire-embedded semiconductor device in which the first wire 88 and the first semiconductor element Wa are embedded in the film adhesive 10 . In addition, in the semiconductor device 200 , the substrate 14 is further electrically connected to the second semiconductor element Waa via the second wire 98 , and the second semiconductor element Waa is sealed by the sealing material 42 .

第一半導體元件Wa的厚度為10μm~170μm，第二半導體元件Waa的厚度為20μm~400μm。埋入至膜狀接著劑10內部的第一半導體元件Wa為用以驅動半導體裝置200的控制器晶片。 The thickness of the first semiconductor element Wa is 10 μm to 170 μm, and the thickness of the second semiconductor element Waa is 20 μm to 400 μm. The first semiconductor element Wa embedded in the film adhesive 10 is a controller chip for driving the semiconductor device 200 .

基板14包括電路圖案84、電路圖案94分別於表面各形成有兩處的有機基板90。第一半導體元件Wa經由接著劑41而壓接於電路圖案94上，第二半導體元件Waa以覆蓋未壓接有第一半 導體元件Wa的電路圖案94、第一半導體元件Wa、及電路圖案84的一部分的方式經由膜狀接著劑10而壓接於基板14。由基板14上的電路圖案84、電路圖案94所引起的凹凸被膜狀接著劑10埋入。並且，利用樹脂製的密封材42，將第二半導體元件Waa、電路圖案84及第二導線98密封。 The substrate 14 includes an organic substrate 90 in which two circuit patterns 84 and two circuit patterns 94 are respectively formed on the surface. The first semiconductor element Wa is crimped on the circuit pattern 94 through the adhesive 41, and the second semiconductor element Waa is covered with the first half which is not crimped. The circuit pattern 94 of the conductor element Wa, the first semiconductor element Wa, and a part of the circuit pattern 84 are pressure-bonded to the substrate 14 via the film adhesive 10 . Concaveities and convexities caused by the circuit pattern 84 and the circuit pattern 94 on the substrate 14 are buried with the film-like adhesive 10 . Then, the second semiconductor element Waa, the circuit pattern 84 , and the second lead 98 are sealed with a resin sealing material 42 .

(半導體裝置的製造方法) (Manufacturing method of semiconductor device)

半導體裝置可藉由如下半導體裝置的製造方法而製造，所述製造方法包括：第一黏晶步驟，將第一半導體元件經由第一導線而電性連接於基板上；層壓步驟，於較第一半導體元件的面積更大的第二半導體元件的單面上，貼附100℃下、0.1秒後的剪切應力緩和率為40%~85%的膜狀接著劑；以及第二黏晶步驟，以膜狀接著劑覆蓋第一半導體元件的方式載置貼附有膜狀接著劑的第二半導體元件，並壓接膜狀接著劑，藉此而將第一導線及第一半導體元件埋入膜狀接著劑。以下，以半導體裝置200的製造程序為例來進行具體說明。 The semiconductor device can be manufactured by the following semiconductor device manufacturing method. The manufacturing method includes: a first die-bonding step, electrically connecting the first semiconductor element to the substrate through a first wire; a lamination step, in the second Attaching a film-like adhesive with a shear stress relaxation rate of 40% to 85% at 100°C and after 0.1 second on one side of the second semiconductor element with a larger area of the first semiconductor element; and the second die-bonding step , placing the second semiconductor element with the film adhesive on the first semiconductor element in such a way that the film adhesive covers the first semiconductor element, and pressing the film adhesive, thereby embedding the first wire and the first semiconductor element Film adhesive. Hereinafter, the manufacturing process of the semiconductor device 200 will be described in detail.

首先，如圖7所示，於基板14上的電路圖案94上壓接帶有接著劑41的第一半導體元件Wa，且經由第一導線88而將基板14上的電路圖案84與第一半導體元件Wa電性連接(第一黏晶步驟)。 At first, as shown in FIG. The device Wa is electrically connected (the first die-bonding step).

其次，於半導體晶圓(例如8吋尺寸)的單面上層壓接著片100，並剝去基材膜20，藉此而於半導體晶圓的單面貼附膜狀接著劑10。並且，於將切割帶60貼合於膜狀接著劑10後，切 割為規定尺寸(例如7.5mm見方)，並將切割帶60剝離，藉此而如圖8所示，獲得貼附有膜狀接著劑10的第二半導體元件Waa(層壓步驟)。 Next, the adhesive sheet 100 is laminated on one side of the semiconductor wafer (for example, 8-inch size), and the base film 20 is peeled off, thereby sticking the film-like adhesive 10 on one side of the semiconductor wafer. And, after bonding the dicing tape 60 to the film adhesive 10, the dicing tape 60 is cut. Cutting to a predetermined size (for example, 7.5mm square), and peeling off the dicing tape 60, as shown in FIG. 8, the 2nd semiconductor element Waa to which the film adhesive 10 was attached was obtained (lamination process).

層壓步驟較佳為於50℃~100℃下進行，更佳為於60℃~80℃下進行。若層壓步驟的溫度為50℃以上，則可獲得與半導體晶圓的良好的密接性。若層壓步驟的溫度為100℃以下，則可抑制膜狀接著劑10於層壓步驟中過度流動，因而可防止引起厚度的變化等。 The lamination step is preferably carried out at 50°C-100°C, more preferably at 60°C-80°C. When the temperature of the lamination step is 50° C. or higher, good adhesion to the semiconductor wafer can be obtained. If the temperature of the lamination step is 100° C. or lower, excessive flow of the film adhesive 10 in the lamination step can be suppressed, thereby preventing a change in thickness or the like from being caused.

作為切割方法，可列舉：使用旋轉刀刃進行刀片切割的方法、藉由雷射而將膜狀接著劑10或晶圓與膜狀接著劑10兩者切斷的方法、以及常溫或冷卻條件下的伸展等通用的方法等。 As the dicing method, it is possible to cite: a method of using a rotating blade to perform blade dicing, a method of cutting the film adhesive 10 or both the wafer and the film adhesive 10 by laser, and the method of cutting the film adhesive 10 at room temperature or under cooling conditions. General methods such as stretching, etc.

並且，將貼附有膜狀接著劑10的第二半導體元件Waa壓接於經由第一導線88而連接有第一半導體元件Wa的基板14。具體而言，如圖9所示，以膜狀接著劑10覆蓋第一半導體元件Wa的方式載置貼附有膜狀接著劑10的第二半導體元件Waa，繼而，如圖10所示，藉由使第二半導體元件Waa壓接於基板14而將第二半導體元件Waa固定於基板14(第二黏晶步驟)。第二黏晶步驟較佳為將膜狀接著劑10於80℃~180℃、0.01MPa~0.50MPa的條件下壓接0.5秒~3.0秒。 Then, the second semiconductor element Waa to which the film adhesive 10 is attached is pressure-bonded to the substrate 14 to which the first semiconductor element Wa is connected via the first wire 88 . Specifically, as shown in FIG. 9, the second semiconductor element Waa to which the film adhesive 10 is attached is placed in such a manner that the film adhesive 10 covers the first semiconductor element Wa, and then, as shown in FIG. The second semiconductor element Waa is fixed to the substrate 14 by press-bonding the second semiconductor element Waa to the substrate 14 (second die bonding step). The second die-bonding step is preferably to press-bond the film adhesive 10 at 80° C. to 180° C. and 0.01 MPa to 0.50 MPa for 0.5 seconds to 3.0 seconds.

亦可以去除第二黏晶步驟中可能產生的空隙為目的，而於第二黏晶步驟後，實施於60℃~175℃、0.3MPa~0.7MPa的條件下將膜狀接著劑10加壓及加熱5分鐘以上的步驟。藉此，可使 良率穩定，並且可更容易地製造半導體裝置。 It is also possible to remove the voids that may be generated in the second die-bonding step, and after the second die-bonding step, the film adhesive 10 is pressurized and Step over 5 minutes of heating. In this way, the The yield rate is stable, and semiconductor devices can be manufactured more easily.

繼而，如圖11所示，於將基板14與第二半導體元件Waa經由第二導線98而電性連接後，於170℃~180℃、5MPa~8MPa的條件下，利用密封材42將電路圖案84、第二導線98及第二半導體元件Waa整體密封(密封步驟)。藉由經過此種步驟而可製造半導體裝置200。 Next, as shown in FIG. 11, after the substrate 14 and the second semiconductor element Waa are electrically connected through the second wire 98, the circuit pattern is sealed by the sealing material 42 under the conditions of 170° C. to 180° C. and 5 MPa to 8 MPa. 84. Entirely sealing the second wire 98 and the second semiconductor element Waa (sealing step). The semiconductor device 200 can be manufactured by going through such steps.

如上所述，半導體裝置200可使用如下膜狀接著劑來製造，所述膜狀接著劑於第一半導體元件經由第一導線而電性連接於基板上，並且於第一半導體元件上壓接較第一半導體元件的面積更大的第二半導體元件而成的半導體裝置中，用於壓接第二半導體元件並且埋入第一導線及第一半導體元件，且100℃下、0.1秒後的剪切應力緩和率為40%~85%。藉由使用100℃下、0.1秒後的剪切應力緩和率為40%以上的膜狀接著劑，可追隨線、半導體元件等的形狀，從而能夠確保埋入性。另外，藉由使用剪切應力緩和率為85%以下的膜狀接著劑，可於壓接時保留膜形狀，從而能夠抑制滲出。 As described above, the semiconductor device 200 can be manufactured using a film-like adhesive that electrically connects the first semiconductor element to the substrate via the first wire, and is crimped on the first semiconductor element. In a semiconductor device composed of a second semiconductor element with a larger area of the first semiconductor element, it is used to crimp the second semiconductor element and bury the first wire and the first semiconductor element, and shear at 100°C after 0.1 second The shear stress relaxation rate is 40%~85%. By using a film-like adhesive having a shear stress relaxation rate of 40% or more after 0.1 second at 100°C, it is possible to follow the shape of wires, semiconductor elements, etc., and ensure embedding properties. In addition, by using a film-like adhesive having a shear stress relaxation rate of 85% or less, the shape of the film can be retained during crimping, and bleeding can be suppressed.

以上，對本發明的較佳實施形態進行了說明，但本發明並不一定限定於所述實施形態。例如，亦可如下所述在不脫離其主旨的範圍內進行適當變更。 As mentioned above, although the preferred embodiment of this invention was demonstrated, this invention is not necessarily limited to the said embodiment. For example, appropriate changes can also be made as described below within a range not departing from the gist.

半導體裝置200中，基板14為電路圖案84、電路圖案94於表面各形成有兩處的有機基板90，但基板14並不限定於此，亦可使用引線框架等金屬基板。 In the semiconductor device 200, the substrate 14 is an organic substrate 90 with two circuit patterns 84 and 94 formed on the surface, but the substrate 14 is not limited thereto, and a metal substrate such as a lead frame may also be used.

半導體裝置200於第一半導體元件Wa上積層有第二半導體元件Waa，具有半導體元件分成兩段積層的構成，但半導體裝置的構成並不限定於此。可於第二半導體元件Waa上進而積層第三半導體元件，亦可於第二半導體元件Waa上進而積層多個半導體元件。隨著所積層的半導體元件的數量增加，而可增加所獲得的半導體裝置的容量。 The semiconductor device 200 has a structure in which the second semiconductor element Waa is stacked on the first semiconductor element Wa, and the semiconductor element is stacked in two stages. However, the structure of the semiconductor device is not limited to this. A third semiconductor element may be further stacked on the second semiconductor element Waa, or a plurality of semiconductor elements may be further stacked on the second semiconductor element Waa. As the number of semiconductor elements to be laminated increases, the capacity of the obtained semiconductor device can be increased.

本實施形態的半導體裝置的製造方法中，於層壓步驟中，於半導體晶圓的單面層壓圖2所示的接著片100，並剝去基材膜20，藉此而貼附有膜狀接著劑10，但層壓時所使用的接著片並不限定於此。可代替接著片100而使用圖4及圖5所示的切割．黏晶一體型接著片120、接著片130。該情況下，當切割半導體晶圓時，無需另行貼附切割帶60。 In the method of manufacturing a semiconductor device according to this embodiment, in the lamination step, the adhesive sheet 100 shown in FIG. Adhesive 10, but the adhesive used for lamination is not limited to this. The cutting shown in Figures 4 and 5 can be used instead of the bonding sheet 100. Die-bonding integrated bonding sheet 120 and bonding sheet 130 . In this case, when dicing the semiconductor wafer, it is not necessary to attach the dicing tape 60 separately.

於層壓步驟中，亦可並非層壓半導體晶圓，而是使將半導體晶圓單片化而得的半導體元件層壓於接著片100。該情況下，可省略切割步驟。 In the lamination step, instead of laminating semiconductor wafers, semiconductor elements obtained by singulating semiconductor wafers may be laminated on the bonding sheet 100 . In this case, the cutting step can be omitted.

[實施例] [Example]

以下，列舉實施例來對本發明進行更具體說明。然而，本發明並不限定於以下的實施例。 Hereinafter, an Example is given and this invention is demonstrated more concretely. However, the present invention is not limited to the following examples.

(實施例及比較例) (Example and Comparative Example)

依照表1及表2(單位：質量份)，分別秤量作為熱硬化性樹脂的環氧樹脂及酚樹脂、以及無機填料而獲得組成物，進而添加環己酮進行攪拌混合。於其中添加作為熱塑性樹脂的丙烯酸橡膠 並攪拌後，進而加入偶合劑及硬化促進劑來進行攪拌，直至各成分變得均勻，從而獲得清漆。再者，表中的各成分的品名是指以下者。 According to Table 1 and Table 2 (unit: parts by mass), epoxy resins and phenol resins as thermosetting resins, and inorganic fillers were weighed to obtain compositions, and cyclohexanone was added and stirred and mixed. To which is added acrylic rubber as a thermoplastic resin After stirring, a coupling agent and a hardening accelerator are further added and stirred until each component becomes uniform, thereby obtaining a varnish. In addition, the product name of each component in a table|surface means the following.

(環氧樹脂) (epoxy resin)

賽羅西德(Celloxide)2021P：(商品名，大賽璐股份有限公司製造，3',4'-環氧環己基甲基3,4-環氧環己烷羧酸酯：環氧當量為126、常溫下為液體、分子量為236) Celloxide 2021P: (trade name, manufactured by Daicel Co., Ltd., 3',4'-epoxycyclohexylmethyl 3,4-epoxycyclohexane carboxylate: epoxy equivalent 126 , liquid at room temperature, molecular weight 236)

YDF-8170C：(商品名，新日化環氧製造股份有限公司製造，雙酚F型環氧樹脂：環氧當量為159、常溫下為液體、重量平均分子量約為310) YDF-8170C: (trade name, manufactured by Nichika Epoxy Manufacturing Co., Ltd., bisphenol F type epoxy resin: epoxy equivalent is 159, liquid at room temperature, weight average molecular weight is about 310)

YDCN-700-10：(商品名，新日化環氧製造股份有限公司製造，鄰甲酚酚醛清漆型環氧樹脂：環氧當量為210、軟化點為75℃~85℃) YDCN-700-10: (trade name, manufactured by Nichika Epoxy Manufacturing Co., Ltd., ortho-cresol novolak type epoxy resin: epoxy equivalent 210, softening point 75°C~85°C)

HP-7000L：(商品名，DIC股份有限公司製造，二環戊二烯改質環氧樹脂：環氧當量為242~252、軟化點為50℃~60℃) HP-7000L: (trade name, manufactured by DIC Co., Ltd., dicyclopentadiene modified epoxy resin: epoxy equivalent 242~252, softening point 50°C~60°C)

VG-3101L：(商品名，普林泰科股份有限公司製造，多官能環氧樹脂：環氧當量為210、軟化點為39℃~46℃) VG-3101L: (trade name, manufactured by Printec Co., Ltd., multifunctional epoxy resin: epoxy equivalent 210, softening point 39°C~46°C)

(酚樹脂) (phenolic resin)

HE-100C-30：(商品名，空氣水股份有限公司製造，酚樹脂：羥基當量為175、軟化點為79℃、吸水率為1質量%、加熱質量減少率為4質量%) HE-100C-30: (trade name, manufactured by Air Water Co., Ltd., phenolic resin: hydroxyl equivalent 175, softening point 79°C, water absorption 1% by mass, heating mass loss 4% by mass)

萊希拓普(Resitop)PSM-4326：(商品名，群榮化學工業股 份有限公司製造，酚樹脂：羥基當量為105、軟化點為118℃~122℃、吸水率為1質量%) Resitop (Resitop) PSM-4326: (trade name, Qunrong Chemical Industry Co., Ltd. Co., Ltd., phenolic resin: hydroxyl equivalent 105, softening point 118°C~122°C, water absorption 1% by mass)

(無機填料) (inorganic filler)

SC2050-HLG：(商品名，雅都瑪(Admatechs)股份有限公司製造，二氧化矽填料分散液：平均粒徑為0.50μm) SC2050-HLG: (trade name, manufactured by Admatechs Co., Ltd., silica filler dispersion: average particle size: 0.50 μm)

艾羅西爾(Aerosil)R972：(商品名，日本艾羅西爾(Aerosil)股份有限公司製造，二氧化矽：平均粒徑為0.016μm)。 Aerosil R972: (trade name, manufactured by Japan Aerosil Co., Ltd., silicon dioxide: average particle diameter: 0.016 μm).

(丙烯酸橡膠) (acrylic rubber)

HTR-860P-3CSP：(樣品名，長瀨化成股份有限公司製造，丙烯酸橡膠：重量平均分子量為80萬、縮水甘油基官能基單體比率為3莫耳%、Tg為12℃) HTR-860P-3CSP: (sample name, manufactured by Nagase Chemical Co., Ltd., acrylic rubber: weight average molecular weight 800,000, glycidyl functional group monomer ratio 3 mol%, Tg 12°C)

HTR-860P-3CSP Mw：50：(樣品名，長瀨化成股份有限公司製造，丙烯酸橡膠：重量平均分子量為50萬、縮水甘油基官能基單體比率為3莫耳%、Tg為12℃) HTR-860P-3CSP Mw: 50: (sample name, manufactured by Nagase Chemical Co., Ltd., acrylic rubber: weight average molecular weight of 500,000, glycidyl functional group monomer ratio of 3 mol%, Tg of 12°C)

HTR-860P-30B-CHN：(樣品名，長瀨化成股份有限公司製造，丙烯酸橡膠：重量平均分子量為23萬、縮水甘油基官能基單體比率為8莫耳%、Tg為-7℃) HTR-860P-30B-CHN: (sample name, manufactured by Nagase Chemical Co., Ltd., acrylic rubber: weight average molecular weight 230,000, glycidyl functional monomer ratio 8 mol%, Tg -7°C)

(偶合劑) (coupling agent)

A-189：(商品名，日本邁圖高新材料(Momentive Performance Materials Japan)有限責任公司製造，γ-巰基丙基三甲氧基矽烷) A-189: (trade name, manufactured by Momentive Performance Materials Japan Co., Ltd., γ-mercaptopropyltrimethoxysilane)

A-1160：(商品名，日本邁圖高新材料有限責任公司製造，γ-脲基丙基三乙氧基矽烷) A-1160: (trade name, manufactured by Momentive High-Tech Materials Co., Ltd., γ-ureidopropyltriethoxysilane)

(硬化促進劑) (hardening accelerator)

固唑(Curezol)2PZ-CN：(商品名，四國化成工業股份有限公司製造，1-氰基乙基-2-苯基咪唑) Curezol 2PZ-CN: (trade name, manufactured by Shikoku Chemical Industry Co., Ltd., 1-cyanoethyl-2-phenylimidazole)

Figure 108103160-A0305-02-0025-1
Figure 108103160-A0305-02-0025-1

Figure 108103160-A0305-02-0025-2
Figure 108103160-A0305-02-0025-2

其次，利用100目的過濾器對所獲得的清漆進行過濾，並進行真空脫泡。將真空脫泡後的清漆塗佈於作為基材膜且已實 施脫模處理的聚對苯二甲酸乙二酯(PET)膜(厚度38μm)上。以90℃下5分鐘、繼而140℃下5分鐘的兩階段對所塗佈的清漆進行加熱乾燥。如此而獲得於PET膜上具有處於B階段狀態的厚度60μm的膜狀接著劑的接著片。 Next, filter the obtained varnish with a 100-mesh filter, and perform vacuum degassing. The varnish after vacuum defoaming is coated on as the substrate film and has been realized Apply release treatment on polyethylene terephthalate (PET) film (thickness 38 μm). The applied varnish was heat-dried in two steps of 5 minutes at 90°C and 5 minutes at 140°C. In this way, an adhesive sheet having a film-shaped adhesive agent with a thickness of 60 μm in a B-stage state on the PET film was obtained.

<各種物性的評價> <Evaluation of various physical properties>

如下所述對所獲得的膜狀接著劑進行評價。將評價結果示於表3及表4中。 The obtained film adhesive was evaluated as follows. The evaluation results are shown in Table 3 and Table 4.

[剪切應力緩和率測定] [Measurement of shear stress relaxation rate]

將多片剝離去除了基材膜的膜狀接著劑貼合，並於厚度方向上衝壓為10mm見方。藉此而獲得10mm見方、厚度360μm的膜狀接著劑的評價用樣品。於動態黏彈性裝置ARES(TA公司製造)上安置直徑8mm的圓形鋁板夾具，利用該夾具來夾入所述評價用樣品。其後，將評價用樣品以最大60℃/分鐘的升溫速度自室溫(30℃)升溫至100℃後，賦予10%的應變，並記錄經過0.1秒後的剪切應力。以初期應力將該應力歸一化而算出應力緩和率。 A plurality of film-like adhesives in which the base film was peeled and removed was bonded together, and punched into a 10 mm square in the thickness direction. Thereby, the sample for evaluation of the film-form adhesive agent of 10 mm square and thickness 360 micrometers was obtained. A circular aluminum plate jig with a diameter of 8 mm was installed on the dynamic viscoelasticity apparatus ARES (manufactured by TA Corporation), and the above-mentioned sample for evaluation was clamped by this jig. Thereafter, the sample for evaluation was heated from room temperature (30° C.) to 100° C. at a temperature increase rate of up to 60° C./min. A strain of 10% was applied thereto, and the shear stress after 0.1 seconds elapsed was recorded. This stress was normalized by the initial stress to calculate the stress relaxation rate.

[剪切黏度測定] [Shear viscosity measurement]

以與剪切應力緩和率測定相同的方式，一邊以頻率1Hz對評價用樣品賦予5%的應變，一邊以5℃/分鐘的升溫速度自室溫(30℃)升溫至140℃，測定剪切黏度。並且，記錄120℃下的測定值。 In the same manner as the measurement of the shear stress relaxation rate, the shear viscosity was measured by increasing the temperature from room temperature (30°C) to 140°C at a rate of 5°C/min while imparting a strain of 5% to the evaluation sample at a frequency of 1 Hz . And the measured value at 120 degreeC was recorded.

[壓接後埋入性評價] [Evaluation of embedding property after crimping]

將接著片的膜狀接著劑貼合兩片而使厚度為120μm，並將其於70℃下貼附於厚度100μm的半導體晶圓(8吋)。其次，將該 等切割為7.5mm見方，獲得帶有接著片的半導體元件。 Two sheets of film-like adhesives for bonding sheets were bonded together so as to have a thickness of 120 μm, and this was attached to a semiconductor wafer (8 inches) with a thickness of 100 μm at 70° C. Second, the Cut into 7.5mm squares to obtain semiconductor elements with bonding sheets.

另一方面，將切割．黏晶一體型膜(日立化成股份有限公司製造，HR-9004-10(厚度10μm))於70℃下貼附於厚度50μm的半導體晶圓(8吋)。其次，將該等切割為3.0mm見方，獲得帶有所述一體型膜的晶片。將帶有一體型膜的晶片於120℃、0.20MPa、2秒鐘的條件下壓接於表面凹凸最大為6μm的評價用基板後，於120℃下加熱2小時而使一體型膜半硬化。藉此而獲得帶有晶片的基板。 On the other hand, will cut. A die-bonding integrated film (manufactured by Hitachi Chemical Co., Ltd., HR-9004-10 (thickness 10 μm)) was attached to a semiconductor wafer (8 inches) with a thickness of 50 μm at 70° C. Next, these were cut into 3.0 mm squares to obtain wafers with the integrated film. The wafer with the integral film was pressure-bonded to the evaluation substrate with a maximum surface irregularity of 6 μm under the conditions of 120° C., 0.20 MPa, and 2 seconds, and then heated at 120° C. for 2 hours to semi-harden the integral film. Thereby a substrate with a wafer is obtained.

將帶有接著片的半導體元件於120℃、0.20MPa、1.5秒鐘的條件下壓接於所獲得的帶有晶片的基板。此時，以之前所壓接的晶片位於帶有接著片的半導體元件的正中間的方式進行對位。 A semiconductor element with an adhesive sheet was pressure-bonded to the obtained wafer-attached substrate under conditions of 120° C., 0.20 MPa, and 1.5 seconds. At this time, alignment is carried out so that the previously press-bonded wafer is located in the middle of the semiconductor element with the bonding wafer.

對於加熱後自然放置冷卻至室溫的結構體，利用超音波C-SCAN圖像診斷裝置(因賽特(Insight)股份有限公司製造，產品編號IS350、探針：75MHz)進行分析，確認壓接後埋入性。藉由以下基準來評價壓接後埋入性。 After heating, the structure was naturally left to cool to room temperature, and the crimp was confirmed by analyzing it with an ultrasonic C-SCAN image diagnostic device (manufactured by Insight Co., Ltd., product number IS350, probe: 75MHz) Post-embedded. Embedding properties after crimping were evaluated by the following criteria.

◎：空隙面積相對於壓接膜面積的比例小於3%。 ◎: The ratio of the void area to the crimp film area is less than 3%.

○：空隙面積相對於壓接膜面積的比例為3%以上且小於5%。 ◯: The ratio of the void area to the crimp film area is 3% or more and less than 5%.

△：空隙面積相對於壓接膜面積的比例為5%以上且小於8%。 Δ: The ratio of the void area to the crimp film area is 5% or more and less than 8%.

×：空隙面積相對於壓接膜面積的比例為8%以上。 ×: The ratio of the void area to the crimp film area is 8% or more.

[滲出量評價] [Exudation amount evaluation]

對於壓接後埋入性評價中所獲得的結構體，使用光學顯微鏡自正上方進行觀察。並且，以半導體元件的邊緣為起點，測定藉 由壓接而自半導體元件的邊緣至所擠出的膜狀接著劑的邊緣為止的距離。測定時使用附帶顯微鏡的圖像解析軟體來進行，將所測定的距離的最大值設為滲出量。再者，對於壓接後埋入性為×及△的例子，未進行評價。 The structure obtained in the embedding property evaluation after crimping was observed from directly above using an optical microscope. And, starting from the edge of the semiconductor element, measure the The distance from the edge of the semiconductor element to the edge of the extruded film adhesive by crimping. The measurement was performed using image analysis software with a microscope, and the maximum value of the measured distances was defined as the bleeding amount. In addition, the evaluation was not performed about the example which embedding property after crimping was x and Δ.

Figure 108103160-A0305-02-0028-3
Figure 108103160-A0305-02-0028-3

Figure 108103160-A0305-02-0028-4
Figure 108103160-A0305-02-0028-4

10‧‧‧膜狀接著劑 10‧‧‧Film adhesive

Claims (6)

一種半導體裝置的製造方法，其包括：第一黏晶步驟，將第一半導體元件經由第一導線而電性連接於基板上；層壓步驟，於較所述第一半導體元件的面積更大的第二半導體元件的單面上，貼附100℃下、0.1秒後的剪切應力緩和率為40%~85%的膜狀接著劑；以及第二黏晶步驟，以所述膜狀接著劑覆蓋所述第一半導體元件的方式載置貼附有所述膜狀接著劑的第二半導體元件，並壓接所述膜狀接著劑，藉此而將所述第一導線及所述第一半導體元件埋入所述膜狀接著劑，所述膜狀接著劑包括(a)熱硬化性成分、(b)熱塑性成分、(c)無機填料、(d)有機填料以及(e)硬化促進劑。 A method for manufacturing a semiconductor device, comprising: a first die-bonding step, electrically connecting a first semiconductor element to a substrate via a first wire; On one side of the second semiconductor element, attach a film-like adhesive having a shear stress relaxation rate of 40% to 85% at 100°C after 0.1 second; and a second die-bonding step, using the film-like adhesive The second semiconductor element on which the film-like adhesive is attached is placed so as to cover the first semiconductor element, and the film-like adhesive is crimped, whereby the first lead wire and the first semiconductor element are bonded together. A semiconductor element is embedded in the film-like adhesive comprising (a) a thermosetting component, (b) a thermoplastic component, (c) an inorganic filler, (d) an organic filler, and (e) a hardening accelerator . 如申請專利範圍第1項所述的半導體裝置的製造方法，其中所述膜狀接著劑的120℃下的剪切黏度為5000Pa．s以下。 The method for manufacturing a semiconductor device as described in item 1 of the scope of the patent application, wherein the film adhesive has a shear viscosity of 5000Pa at 120°C. below s. 如申請專利範圍第1項或第2項所述的半導體裝置的製造方法，其中所述膜狀接著劑包含丙烯酸樹脂及環氧樹脂。 The method of manufacturing a semiconductor device according to claim 1 or claim 2, wherein the film adhesive includes acrylic resin and epoxy resin. 一種膜狀接著劑，其於第一半導體元件經由第一導線而電性連接於基板上，並且於所述第一半導體元件上壓接較所述第一半導體元件的面積更大的第二半導體元件而成的半導體裝置中，用於壓接所述第二半導體元件並且埋入所述第一導線及所述第一半導體元件，且100℃下、0.1秒後的剪切應力緩和率為40% ~85%，所述膜狀接著劑包括(a)熱硬化性成分、(b)熱塑性成分、(c)無機填料、(d)有機填料以及(e)硬化促進劑。 A film-like adhesive, which electrically connects a first semiconductor element to a substrate via a first wire, and press-bonds a second semiconductor element having a larger area than the first semiconductor element on the first semiconductor element. In a semiconductor device made of components, for crimping the second semiconductor element and embedding the first lead wire and the first semiconductor element, and having a shear stress relaxation rate of 40 after 0.1 second at 100°C % ~85%, the film adhesive includes (a) thermosetting components, (b) thermoplastic components, (c) inorganic fillers, (d) organic fillers and (e) hardening accelerators. 如申請專利範圍第4項所述的膜狀接著劑，其中120℃下的剪切黏度為5000Pa．s以下。 As the film-like adhesive described in Item 4 of the scope of the patent application, the shear viscosity at 120°C is 5000Pa. below s. 如申請專利範圍第4項或第5項所述的膜狀接著劑，其包含丙烯酸樹脂及環氧樹脂。 The film-like adhesive as described in item 4 or item 5 of the patent application includes acrylic resin and epoxy resin.
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