CN108949051B - Dicing die bonding film - Google Patents
Dicing die bonding film Download PDFInfo
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- CN108949051B CN108949051B CN201810482239.5A CN201810482239A CN108949051B CN 108949051 B CN108949051 B CN 108949051B CN 201810482239 A CN201810482239 A CN 201810482239A CN 108949051 B CN108949051 B CN 108949051B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
- C09J7/25—Plastics; Metallised plastics based on macromolecular compounds obtained otherwise than by reactions involving only carbon-to-carbon unsaturated bonds
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/04—Non-macromolecular additives inorganic
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
- C09J133/04—Homopolymers or copolymers of esters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/03—Polymer mixtures characterised by other features containing three or more polymers in a blend
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/10—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet
- C09J2301/12—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers
- C09J2301/122—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers the adhesive layer being present only on one side of the carrier, e.g. single-sided adhesive tape
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2467/00—Presence of polyester
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Dicing (AREA)
- Adhesive Tapes (AREA)
- Die Bonding (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
Abstract
Provided is a dicing die-bonding film which is excellent in pick-up suitability and die-bonding suitability, and which is less likely to float between the die-bonding film and an adhesive layer during and after expansion at room temperature. A dicing die-bonding film comprising: a dicing tape having a base material and an adhesive layer laminated on the base material; and a die bond film laminated on the adhesive layer in the dicing tape, wherein the die bond film has a storage modulus E' of 3 to 5GPa at 25 ℃ measured at a frequency of 10 Hz.
Description
Technical Field
The present invention relates to dicing die-bonding films. More specifically, the present invention relates to a dicing die-bonding film that can be used in a process of manufacturing a semiconductor device.
Background
Conventionally, dicing tapes and dicing die-bonding films have been used in some cases for manufacturing semiconductor devices. The dicing tape is in a form in which an adhesive layer is provided on a substrate and is used for the following purposes: the semiconductor wafer is arranged on the adhesive layer, and is fixed in order to prevent the semiconductor chips singulated when the semiconductor wafer is diced (cut) from scattering (see, for example, patent document 1).
The dicing die-bonding film is provided with a die-bonding film releasably on the adhesive layer of the dicing tape. In the manufacture of semiconductor devices, a semiconductor wafer is held on a die bond film of a dicing die bond film, and the semiconductor wafer is diced to form individual semiconductor chips. Then, for example, through a cleaning step, the semiconductor chip is picked up and peeled off from the dicing tape together with the die bonding film, and the semiconductor chip is temporarily fixed (die-bonded) to an adherend such as a lead frame via the die bonding film. Therefore, it is important for a die-bonding film among dicing die-bonding films to have excellent releasability from a dicing tape at the time of picking up (pickup suitability) and excellent adhesiveness to an adherend at the time of die bonding (die-bonding suitability).
When a dicing die-bonding film in which a die-bonding film is laminated on a dicing tape is used to dice a semiconductor wafer with the die-bonding film held, the die-bonding film and the semiconductor wafer need to be cut at the same time. However, in the conventional dicing method using a diamond blade, there is a concern that the chip bonding film and the dicing tape adhere due to the influence of heat generated at the time of dicing, the semiconductor chips are fixed to each other due to the generation of chips, the chips adhere to the side surfaces of the semiconductor chips, and the like, and therefore, it is necessary to reduce the cutting speed, which leads to an increase in cost.
Therefore, the following methods have been proposed in recent years: a method of forming a groove in a front surface of a semiconductor wafer and then performing back grinding to obtain individual semiconductor chips (sometimes referred to as "DBG (Dicing and polishing)") (see, for example, patent document 2); a method of obtaining a single semiconductor chip (a semiconductor chip with a die-bonding film) by irradiating a pre-dividing line in a semiconductor wafer with a laser beam to form a modified region, easily dividing the semiconductor wafer along the pre-dividing line, then attaching the semiconductor wafer to a dicing die-bonding film, and then expanding a dicing tape at a low temperature (for example, -25 to 0 ℃) (hereinafter, sometimes referred to as "cold expansion") (for example, see patent document 3). This is a method called Stealth Dicing (registered trademark). In addition, the following methods are also known in DBG: and attaching the obtained individual semiconductor chips to a dicing die-bonding film, and then cooling and expanding the dicing tape to thereby dice the die-bonding film into a size equivalent to that of the individual semiconductor chips, to obtain individual semiconductor chips with the die-bonding film. As described above, when the die-bonding film is cut by cooling expansion, it is important that the die-bonding film in the cut die-bonding film has excellent cuttability during cooling expansion.
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open publication No. 2011-216563
Patent document 2: japanese patent laid-open publication No. 2003-007649
Patent document 3: japanese patent laid-open publication No. 2009-164556
Disclosure of Invention
Problems to be solved by the invention
In DBG, stealth dicing, or the like, after the die bond film is cut, the cut die bond film is expanded at around room temperature (hereinafter sometimes referred to as "room temperature expansion") to widen the interval between the adjacent individual semiconductor chips with the die bond film, and then the outer peripheral portions of the semiconductor chips are thermally shrunk (hereinafter sometimes referred to as "thermal shrinkage") and fixed in a state where the interval between the semiconductor chips is widened, whereby the obtained individual semiconductor chips with the die bond film can be easily picked up.
In recent years, with the demand for higher capacity of semiconductors, circuit layers have become multilayered and silicon layers have become thinner. However, as the circuit layer is multilayered, the thickness (total thickness) of the circuit layer increases, and the proportion of the resin contained in the circuit layer tends to increase, so that the difference in linear expansion coefficient between the multilayered circuit layer and the thinned silicon layer becomes significant, and the semiconductor chip becomes easily warped. Therefore, the semiconductor chip obtained after dicing and having a multilayered circuit layer with a die-bonding film is particularly likely to be lifted (peeled) during and after the expansion at room temperature (for example, during the period until pickup) at the interface between the pressure-sensitive adhesive layer of the dicing tape and the die-bonding film.
The present invention has been made in view of the above problems, and an object of the present invention is to provide a dicing die-bonding film which is excellent in pick-up suitability and die-bonding suitability, and is less likely to float between the die-bonding film and an adhesive layer during and after expansion at room temperature.
Means for solving the problems
The present inventors have conducted extensive studies to achieve the above object and as a result, have found that when a dicing tape having a storage modulus E' at 25 ℃ of a die-bonding film within a specific range is used, the die-bonding film is excellent in pick-up suitability and die-bonding suitability even in the case of using a semiconductor chip having a circuit layer formed in a plurality of layers, and is less likely to float during and after expansion at room temperature. The present invention has been completed based on these findings.
That is, the present invention provides a dicing die-bonding film comprising: a dicing tape having a base material and an adhesive layer laminated on the base material; and a die bond film laminated on the adhesive layer in the dicing tape, wherein the die bond film has a storage modulus E' of 3 to 5GPa at 25 ℃ measured at a frequency of 10 Hz.
In the dicing die-bonding film of the present invention, the storage modulus E' at 25 ℃ measured at a frequency of 10Hz of the die-bonding film is set to be higher than that of the conventional die-bonding film by 3GPa or more, so that when stress is applied in a slow speed range at normal temperature, the die-bonding film is less likely to move in the vertical direction (thickness direction), and when not only a semiconductor chip that is not multilayered but also a semiconductor chip in which circuit layers are multilayered is used, the die-bonding film is less likely to float from the dicing tape during and after expansion at normal temperature (including, for example, a cleaning step, a period before picking up, and the like). Further, when the singulated die-bonding film is intended to be picked up from the dicing tape and peeled off, the pickup can be easily performed because stress is applied in a fast speed range. Further, by controlling the storage modulus E' at 25 ℃ measured under the condition of the frequency of 10Hz of the die-bonding film to 5GPa or less, the die-bonding film is excellent in wettability to an adherend and in die-bonding suitability at the time of die-bonding, and can be favorably performed at the time of die-bonding (temporarily fixing) a semiconductor chip to the adherend. Accordingly, when the dicing die-bonding film of the present invention is used, by setting the storage modulus E' at 25 ℃ measured at a frequency of 10Hz to 3GPa or more, it is possible to satisfy both the characteristic of being less likely to cause floating when stress is applied in a relatively slow speed range and the characteristic of being easily picked up in picking up when stress is applied in a relatively fast speed range.
In the dicing die-bonding film of the present invention, it is preferable that the storage modulus E' of the die-bonding film at-15 ℃ measured at a frequency of 10Hz is 4 to 7 GPa. By setting the storage modulus E' at-15 ℃ measured at a frequency of 10Hz of the die-bonding film to be in the range of 4-7 GPa, which is higher than that of the conventional die-bonding film, the die-bonding film is less likely to move in the vertical direction (thickness direction) when stress is applied at a low temperature, and the die-bonding film is less likely to float from the dicing tape during and after cooling expansion (for example, during a period before returning to normal temperature) when not only a semiconductor chip that is not multilayered but also a semiconductor chip in which circuit layers are multilayered is used. In addition, the die bond film can be easily cut by cooling expansion. Therefore, when the dicing die-bonding film having such a configuration is used, even when a semiconductor chip having a plurality of circuit layers is used, the die-bonding film is excellent in the cuttability, pickup suitability, and die-bonding suitability during cooling expansion, and is less likely to float during cooling expansion, during normal temperature expansion, and thereafter.
In the dicing die-bonding film of the present invention, it is preferable that the storage modulus E 'at 150 ℃ measured under the condition of 10Hz after thermosetting is 20 to 200MPa, and the storage modulus E' at 250 ℃ measured under the condition of 10Hz is 20 to 200 MPa. When a semiconductor chip is bonded to an adherend via a die bonding film and then a wire bonding step described later is performed, the die bonding film may be heated to about 150 ℃ by heat generated by heating at the time of wire bonding in the wire bonding step, but the die bonding film after thermosetting may be moderately hardened by showing a storage modulus E' at 150 ℃ measured under a condition of a frequency of 10Hz at 20 to 200MPa in the die bonding film after thermosetting, and even when the temperature is increased to about 150 ℃ in the wire bonding step, the semiconductor chip is less likely to move due to an impact of wire bonding, and a force is easily transmitted to a wire bonding pad, so that wire bonding can be performed appropriately. Further, as a reliability evaluation of the semiconductor-related component, a moisture-resistant solder reflow test in which the semiconductor-related component is heated to about 250 ℃ is generally performed, and by making the storage modulus E' at 250 ℃ measured under a condition of a frequency of 10Hz after the die bond film is thermally cured to be 20 to 200MPa, the die bond film is less likely to be peeled from the adherend even when heated to about 250 ℃ in the moisture-resistant solder reflow test. That is, by allowing the two storage moduli E' after the thermosetting of the die-bonding film to be within the above ranges, the adhesion stability after the semiconductor chip is fixed becomes excellent.
In the dicing die-bonding film of the present invention, it is preferable that the storage modulus G' of the die-bonding film at 130 ℃ measured at a frequency of 1Hz is 0.03 to 0.7 MPa. This makes it possible to further prevent the chip from floating when the chip is bonded. Further, since the storage modulus E' at 25 ℃ is easily controlled within the above range, the floating is less likely to occur during cold expansion, during normal temperature expansion, or thereafter, and the suitability for die bonding to an adherend is further improved, and the bonding can be performed well when the semiconductor chip is die bonded to the adherend.
In the dicing die-bonding film of the present invention, it is preferable that the loss modulus G' at 130 ℃ measured under a frequency of 1Hz of the die-bonding film is 0.01 to 0.1 MPa. This makes it possible to further prevent the chip from floating during bonding.
ADVANTAGEOUS EFFECTS OF INVENTION
The dicing die-bonding film of the present invention is not only excellent in pick-up suitability and die-bonding suitability of the die-bonding film, but also less likely to float between the die-bonding film and the adhesive layer during and after the expansion at room temperature. In particular, the floating is less likely to occur even when a semiconductor chip having a plurality of circuit layers is used.
Drawings
Fig. 1 is a schematic cross-sectional view showing one embodiment of the dicing die-bonding film of the present invention.
Fig. 2 shows a part of the steps in the method for manufacturing a semiconductor device using the dicing die-bonding film of the present invention.
Fig. 3 shows a part of the steps in the method for manufacturing a semiconductor device using the dicing die-bonding film of the present invention.
Fig. 4 shows a part of the steps in the method for manufacturing a semiconductor device using the dicing die-bonding film of the present invention.
Fig. 5 shows a part of the steps in the method for manufacturing a semiconductor device using the dicing die-bonding film of the present invention.
Fig. 6 shows a part of the steps in the method for manufacturing a semiconductor device using the dicing die-bonding film according to the present invention.
Fig. 7 shows a part of the steps in the method for manufacturing a semiconductor device using the dicing die-bonding film of the present invention.
Fig. 8 shows a part of the steps in a modification of the method for manufacturing a semiconductor device using the dicing die-bonding film of the present invention.
Fig. 9 shows a part of the steps in a modification of the method for manufacturing a semiconductor device using a dicing die-bonding film according to the present invention.
Fig. 10 shows a part of the steps in a modification of the method for manufacturing a semiconductor device using a dicing die-bonding film according to the present invention.
Fig. 11 shows a part of the steps in a modification of the method for manufacturing a semiconductor device using a dicing die-bonding film according to the present invention.
Description of the reference numerals
1 dicing die-bonding film
10 cutting belt
11 base material
12 adhesive layer
20. 21 die bonding film
W, 30A semiconductor wafer
30B semiconductor wafer division body
30a dividing groove
30b modified region
31 semiconductor chip
Detailed Description
[ dicing die-bonding film ]
The dicing die-bonding film of the invention comprises: a dicing tape having a base material and an adhesive layer laminated on the base material; and a die-bonding film laminated on the adhesive layer in the dicing tape. One embodiment of the dicing die-bonding film of the present invention is described below. Fig. 1 is a schematic cross-sectional view showing one embodiment of the dicing die-bonding film of the present invention.
As shown in fig. 1, the dicing die-bonding film 1 includes: cutting the tape 10; and a die-bonding film 20 laminated on the adhesive layer 12 in the dicing tape 10, and used in an expansion step in a process of obtaining a semiconductor chip with a die-bonding film in the manufacture of a semiconductor device. The dicing die-bonding film 1 has, for example, a disk shape, and its size corresponds to a semiconductor wafer to be processed in the manufacturing process of a semiconductor device. The dicing tape 10 in the dicing die-bonding film 1 has a laminated structure including a base material 11 and an adhesive layer 12.
(substrate)
The base material 11 in the dicing tape 10 functions as a support for the dicing tape 10 and the dicing die-bonding film 1. Examples of the substrate 11 include a plastic substrate (particularly, a plastic film). The substrate 11 may be a single layer, or may be a laminate of the same type of substrate or different types of substrates.
Examples of the resin constituting the plastic substrate include: polyolefin resins such as low-density polyethylene, linear low-density polyethylene, medium-density polyethylene, high-density polyethylene, ultra-low-density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homo-polypropylene, polybutene, polymethylpentene, ethylene-vinyl acetate copolymer (EVA), ionomer, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene-butene copolymer, and ethylene-hexene copolymer; a polyurethane; polyesters such as polyethylene terephthalate (PET), polyethylene naphthalate, and polybutylene terephthalate (PBT); a polycarbonate; a polyimide; polyether ether ketone; a polyetherimide; polyamides such as aromatic polyamides and wholly aromatic polyamides; polyphenylene sulfide; a fluororesin; polyvinyl chloride; polyvinylidene chloride; a cellulose resin; silicone resins, and the like. The resin may be used alone or in combination of two or more. When the pressure-sensitive adhesive layer 12 is a radiation-curable type as described later, the substrate 11 preferably has radiation transparency.
When the substrate 11 is a plastic film, the plastic film may be non-oriented or oriented in at least one direction (one-axis direction, two-axis direction, etc.). The plastic film is capable of heat shrinking in at least one direction when oriented in the at least one direction. When having heat shrinkability, the outer peripheral portion of the semiconductor wafer of the dicing tape 1 can be heat shrunk, whereby the singulated semiconductor chips with the die bond film can be fixed in a state where the interval between the semiconductor chips is widened, and thus the semiconductor chips can be easily picked up. In order to impart isotropic heat shrinkability to the base material 11 and the dicing tape 1, the base material 11 is preferably a biaxially oriented film. The plastic film oriented in at least one direction may be obtained by stretching a non-stretched plastic film in at least one direction (uniaxial stretching, biaxial stretching, or the like). The heat shrinkage ratio of the base material 11 and the dicing tape 1 in a heat treatment test performed at a heating temperature of 100 ℃ for 60 seconds is preferably 1 to 30%, more preferably 2 to 25%, further preferably 3 to 20%, and particularly preferably 5 to 20%. The heat shrinkage ratio is preferably a heat shrinkage ratio in at least one of the MD direction and the TD direction.
For the purpose of improving adhesion to the pressure-sensitive adhesive layer 12, holding properties, and the like, the pressure-sensitive adhesive layer 12-side surface of the substrate 11 may be subjected to physical treatment such as corona discharge treatment, plasma treatment, sanding treatment, ozone exposure treatment, flame exposure treatment, high-voltage shock exposure treatment, ionizing radiation treatment, or the like; chemical treatments such as chromic acid treatment; surface treatment such as easy adhesion treatment with a coating agent (primer). In addition, in order to impart antistatic ability, a conductive vapor deposition layer containing a metal, an alloy, an oxide thereof, or the like may be provided on the surface of the base material 11.
From the viewpoint of ensuring the strength with which the base material 11 functions as a support for the dicing tape 10 and the dicing die-bonding film 1, the thickness of the base material 11 is preferably 40 μm or more, more preferably 50 μm or more, still more preferably 55 μm or more, and particularly preferably 60 μm or more. From the viewpoint of achieving appropriate flexibility of the dicing tape 10 and the dicing die-bonding film 1, the thickness of the base material 11 is preferably 200 μm or less, more preferably 180 μm or less, and still more preferably 150 μm or less.
(adhesive layer)
The adhesive layer 12 is formed of an adhesive. The pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 may be a pressure-sensitive adhesive (a pressure-sensitive adhesive-reducing type pressure-sensitive adhesive) in which the adhesive strength can be intentionally reduced by an external action such as irradiation with radiation or heating, or a pressure-sensitive adhesive (a pressure-sensitive adhesive-non-reducing type pressure-sensitive adhesive) in which the adhesive strength is hardly or not reduced by an external action, and may be appropriately selected depending on a method, conditions, and the like for singulating a semiconductor wafer into pieces using the dicing die-bonding film 1.
When an adhesive force reducing type adhesive is used as the above adhesive, it can be used in a state where the adhesive layer 12 shows a relatively high adhesive force and a state where it shows a relatively low adhesive force in the manufacturing process or the using process of the dicing die-bonding film 1. For example, in the production process of the dicing die-bonding film 1, when the pressure-sensitive adhesive layer 12 of the dicing tape 10 is bonded to the die-bonding film 20, and when the dicing die-bonding film 1 is used in the dicing step, the adherend such as the die-bonding film 20 can be prevented from floating from the pressure-sensitive adhesive layer 12 due to the state of relatively high adhesive force exhibited by the pressure-sensitive adhesive layer 12, and on the other hand, in the subsequent pickup step for picking up the semiconductor chip with the die-bonding film from the dicing tape 10 of the dicing die-bonding film 1, pickup can be easily performed by reducing the adhesive force of the pressure-sensitive adhesive layer 12.
Examples of such a pressure-sensitive adhesive having a reduced adhesive strength include: radiation-curable pressure-sensitive adhesives (pressure-sensitive adhesives having radiation-curing properties), thermally foamable pressure-sensitive adhesives, and the like. As the adhesive for forming the adhesive layer 12, one adhesive strength-reducing adhesive may be used, or two or more adhesive strength-reducing adhesives may be used. The adhesive layer 12 may be entirely formed of an adhesive force reducing adhesive, or may be partially formed of an adhesive force reducing adhesive. For example, when the pressure-sensitive adhesive layer 12 has a single-layer structure, the entire pressure-sensitive adhesive layer 12 may be formed of a pressure-sensitive adhesive of reduced adhesive strength, or a predetermined portion (for example, a central region which is a region to be bonded to the semiconductor wafer) of the pressure-sensitive adhesive layer 12 may be formed of a pressure-sensitive adhesive of reduced adhesive strength, and other portions (for example, regions located outside the central region which is a region to be bonded to the wafer ring) may be formed of a pressure-sensitive adhesive of non-reduced adhesive strength.
As the radiation-curable pressure-sensitive adhesive, for example, a type of pressure-sensitive adhesive that is cured by irradiation with electron beams, ultraviolet rays, α rays, β rays, γ rays, or X rays can be used, and a type of pressure-sensitive adhesive that is cured by irradiation with ultraviolet rays (ultraviolet-curable pressure-sensitive adhesive) is particularly preferably used.
Examples of the radiation-curable pressure-sensitive adhesive include: an addition type radiation curing adhesive containing a base polymer such as an acrylic polymer, and a radiation polymerizable monomer component and oligomer component having a functional group such as a radiation polymerizable carbon-carbon double bond.
The acrylic polymer is a polymer containing a constituent unit derived from an acrylic monomer (monomer component having a (meth) acryloyl group in the molecule) as a constituent unit of the polymer. The acrylic polymer is preferably a polymer having the largest content of constituent units derived from a (meth) acrylate ester in terms of mass ratio. The acrylic polymer may be used alone or in combination of two or more. In the present specification, "(meth) acrylic acid" means "acrylic acid" and/or "methacrylic acid" ("either or both of acrylic acid" and "methacrylic acid"), and the like.
Examples of the (meth) acrylic acid ester include: and (meth) acrylates containing a hydrocarbon group such as alkyl (meth) acrylates, cycloalkyl (meth) acrylates, and aryl (meth) acrylates. Examples of the alkyl (meth) acrylate include: methyl, ethyl, propyl, isopropyl, butyl, isobutyl, sec-butyl, tert-butyl, pentyl, isopentyl, hexyl, heptyl, octyl, 2-ethylhexyl, isooctyl, nonyl, decyl, isodecyl, undecyl, dodecyl, tridecyl, tetradecyl, hexadecyl, octadecyl, eicosyl (meth) acrylates and the like. Examples of the cycloalkyl (meth) acrylate include: cyclopentyl esters, cyclohexyl esters of (meth) acrylic acid, and the like. Examples of the aryl (meth) acrylate include: phenyl and benzyl (meth) acrylates. The (meth) acrylic acid ester may be used alone or in combination of two or more. In order to suitably exhibit the basic characteristics such as adhesiveness by the (meth) acrylate, the proportion of the (meth) acrylate in the entire monomer components for forming the acrylic polymer is preferably 40 mass% or more, and more preferably 60 mass% or more.
The acrylic polymer may contain a constituent unit derived from another monomer component copolymerizable with the (meth) acrylic acid ester for the purpose of improving cohesive force, heat resistance, and the like. Examples of the other monomer components include: a carboxyl group-containing monomer; an acid anhydride monomer; a hydroxyl-containing monomer; a glycidyl group-containing monomer; a sulfonic acid group-containing monomer; a monomer containing a phosphoric acid group; and functional group-containing monomers such as acrylamide and acrylonitrile. Examples of the carboxyl group-containing monomer include: acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, crotonic acid, and the like. Examples of the acid anhydride monomer include: maleic anhydride, itaconic anhydride, and the like. Examples of the hydroxyl group-containing monomer include: 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, and (4-hydroxymethylcyclohexyl) methyl (meth) acrylate. Examples of the glycidyl group-containing monomer include: glycidyl (meth) acrylate, methyl glycidyl (meth) acrylate, and the like. Examples of the sulfonic acid group-containing monomer include: styrenesulfonic acid, allylsulfonic acid, 2- (meth) acrylamide-2-methylpropanesulfonic acid, (meth) acrylamidopropanesulfonic acid, sulfopropyl (meth) acrylate, (meth) acryloyloxynaphthalenesulfonic acid, and the like. Examples of the phosphoric acid group-containing monomer include: 2-hydroxyethyl acryloyl phosphate, and the like. The other monomer components may be used alone or in combination of two or more. In order to suitably exhibit the basic characteristics such as adhesiveness by the (meth) acrylate, the proportion of the other monomer component in the total monomer components for forming the acrylic polymer is preferably 60 mass% or less, and more preferably 40 mass% or less.
The acrylic polymer may contain a constituent unit derived from a polyfunctional monomer copolymerizable with the acrylic polymer-forming monomer component such as (meth) acrylate ester so as to form a crosslinked structure in the polymer skeleton. Examples of the polyfunctional monomer include: examples of the monomer include monomers having a (meth) acryloyl group and another reactive functional group in the molecule, such as hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate (for example, polyglycidyl (meth) acrylate), polyester (meth) acrylate, and urethane (meth) acrylate. The polyfunctional monomer may be used alone or in combination of two or more. In order to suitably exhibit basic characteristics such as adhesiveness by the (meth) acrylate, the ratio of the polyfunctional monomer in the entire monomer components for forming the acrylic polymer is preferably 40% by mass or less, and more preferably 30% by mass or less.
The acrylic polymer can be obtained by polymerizing one or more monomer components including an acrylic monomer. Examples of the polymerization method include solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization.
The number average molecular weight of the acrylic polymer in the pressure-sensitive adhesive layer 12 is preferably 10 ten thousand or more, and more preferably 20 to 300 ten thousand. When the number average molecular weight is 10 ten thousand or more, the amount of low molecular weight substances in the pressure-sensitive adhesive layer tends to be small, and contamination of a die bond film, a semiconductor wafer, or the like can be further suppressed.
The radiation-curable pressure-sensitive adhesive may contain a crosslinking agent. For example, when an acrylic polymer is used as the base polymer, the acrylic polymer can be crosslinked, and low molecular weight substances in the adhesive layer 12 can be further reduced. Examples of the crosslinking agent include: polyisocyanate compounds, epoxy compounds, polyol compounds (such as polyphenol compounds), aziridine compounds, melamine compounds, and the like. When the crosslinking agent is used, the amount thereof is preferably about 5 parts by mass or less, and more preferably 0.1 to 5 parts by mass, per 100 parts by mass of the base polymer.
Examples of the radiation-polymerizable monomer component include: urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1, 4-butanediol di (meth) acrylate, and the like. Examples of the radiation-polymerizable oligomer component include: various oligomers such as urethanes, polyethers, polyesters, polycarbonates, and polybutadienes, and the oligomer component having a molecular weight of about 100 to 30000 is preferable. The content of the radiation-curable monomer component and oligomer component in the radiation-curable pressure-sensitive adhesive forming the pressure-sensitive adhesive layer 12 is, for example, 5 to 500 parts by mass, preferably about 40 to 150 parts by mass, based on 100 parts by mass of the base polymer. Examples of the additive type radiation-curable pressure-sensitive adhesive include: an addition type radiation curing adhesive disclosed in Japanese patent laid-open No. 60-196956.
Examples of the radiation-curable pressure-sensitive adhesive include: an internal radiation-curable pressure-sensitive adhesive containing a base polymer having a functional group such as a radiation-polymerizable carbon-carbon double bond at a polymer side chain, a polymer main chain, or a polymer main chain end. When such an internal radiation curing adhesive is used, there are downward orientations: it is possible to suppress an undesirable change in the adhesive properties with time due to the movement of the low-molecular weight component within the formed adhesive layer 12.
The base polymer contained in the internal radiation-curable pressure-sensitive adhesive is preferably an acrylic polymer. As the acrylic polymer that can be contained in the internal radiation curing type pressure-sensitive adhesive, the acrylic polymer described as the acrylic polymer contained in the additive radiation curing type pressure-sensitive adhesive can be used. Examples of the method for introducing a radiation-polymerizable carbon-carbon double bond into an acrylic polymer include the following methods: after a raw material monomer containing a monomer component having a 1 st functional group is polymerized (copolymerized) to obtain an acrylic polymer, a compound having a 2 nd functional group capable of reacting with the 1 st functional group and a radiation-polymerizable carbon-carbon double bond is subjected to a condensation reaction or an addition reaction with the acrylic polymer while maintaining the radiation-polymerizability of the carbon-carbon double bond.
Examples of the combination of the 1 st functional group and the 2 nd functional group include: carboxyl and epoxy, epoxy and carboxyl, carboxyl and aziridine, aziridine and carboxyl, hydroxyl and isocyanate, isocyanate and hydroxyl, and the like. Among these, from the viewpoint of following the easiness of the reaction, a combination of a hydroxyl group and an isocyanate group, and a combination of an isocyanate group and a hydroxyl group are preferable. Among them, from the viewpoint of high technical difficulty in producing a polymer having an isocyanate group with high reactivity and easiness in producing and obtaining an acrylic polymer having a hydroxyl group, a combination in which the 1 st functional group is a hydroxyl group and the 2 nd functional group is an isocyanate group is preferable. Examples of the compound having an isocyanate group and a radiation-polymerizable carbon-carbon double bond include: methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl- α, α -dimethylbenzyl isocyanate, and the like. Examples of the acrylic polymer having a hydroxyl group include acrylic polymers containing constituent units derived from the above-mentioned hydroxyl group-containing monomer and ether compounds such as 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether and diethylene glycol monovinyl ether.
The radiation-curable pressure-sensitive adhesive preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include: alpha-ketol compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, thioxanthone compounds, camphorquinone, halogenated ketones, acyl phosphine oxides, acyl phosphonate esters, and the like. Examples of the α -ketols include: 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α -hydroxy- α, α' -dimethylacetophenone, 2-methyl-2-hydroxypropiophenone, 1-hydroxycyclohexyl phenyl ketone, and the like. Examples of the acetophenone compounds include: methoxyacetophenone, 2-dimethoxy-2-phenylacetophenone, 2-diethoxyacetophenone, 2-methyl-1- [4- (methylthio) -phenyl ] -2-morpholinopropane-1 and the like. Examples of the benzoin ether compound include: benzoin ethyl ether, benzoin isopropyl ether, anisoin methyl ether, and the like. Examples of the ketal compounds include: benzil dimethyl ketal, and the like. Examples of the aromatic sulfonyl chloride-based compound include: 2-naphthalenesulfonyl chloride, and the like. Examples of the photoactive oxime compounds include: 1-phenyl-1, 2-propanedione-2- (O-ethoxycarbonyl) oxime, and the like. Examples of the benzophenone compound include: benzophenone, benzoylbenzoic acid, 3' -dimethyl-4-methoxybenzophenone and the like. Examples of the thioxanthone compound include: thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2, 4-dimethylthioxanthone, isopropylthioxanthone, 2, 4-dichlorothioxanthone, 2, 4-diethylthioxanthone, 2, 4-diisopropylthioxanthone, and the like. The content of the photopolymerization initiator in the radiation-curable pressure-sensitive adhesive is, for example, 0.05 to 20 parts by mass per 100 parts by mass of the base polymer.
The heat-expandable adhesive is an adhesive containing a component (a foaming agent, heat-expandable microspheres, or the like) which expands and expands by heating. Examples of the blowing agent include various inorganic blowing agents and organic blowing agents. Examples of the inorganic foaming agent include: ammonium carbonate, ammonium bicarbonate, sodium bicarbonate, ammonium nitrite, sodium borohydride, azides, and the like. Examples of the organic foaming agent include: chlorofluoroalkanes such as trichlorofluoromethane and dichlorofluoromethane; azo compounds such as azobisisobutyronitrile, azodicarbonamide, and barium azodicarboxylate; hydrazine compounds such as p-toluenesulfonyl hydrazide, diphenylsulfone-3, 3 '-disulfonyl hydrazide, 4' -oxybis-benzenesulfonyl hydrazide and allyldisulfonyl hydrazide; semicarbazide compounds such as p-toluenesulfonyl semicarbazide and 4, 4' -oxybis (benzenesulfonyl semicarbazide); triazole compounds such as 5-morpholinyl-1, 2,3, 4-thiatriazole; and N-nitroso compounds such as N, N ' -dinitrosopentamethylenetetramine and N, N ' -dimethyl-N, N ' -dinitrosoterephthalamide. Examples of the thermally expandable microspheres include microspheres in which a substance that is easily vaporized by heating and expands is contained in a shell. Examples of the substance which is easily vaporized and expanded by heating include: isobutane, propane, pentane, etc. The thermally expandable microspheres can be produced by encapsulating a substance that is easily vaporized by heating and expands into a shell-forming substance by an agglomeration method, an interfacial polymerization method, or the like. As the shell-forming substance, a substance exhibiting thermal fusion properties or a substance which can be broken by the thermal expansion effect of the encapsulated substance can be used. Examples of such substances include: vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, polysulfone, and the like.
Examples of the non-reducing adhesive strength adhesive include: a pressure-sensitive adhesive and a pressure-sensitive adhesive in which the radiation-curable pressure-sensitive adhesive described in the adhesive force-reducing pressure-sensitive adhesive is cured by irradiation with radiation in advance. As the adhesive for forming the adhesive layer 12, one kind of adhesive force non-reducing adhesive may be used, or two or more kinds of adhesive force non-reducing adhesives may be used. The entire pressure-sensitive adhesive layer 12 may be formed of a non-adhesive-force-reducing pressure-sensitive adhesive, or a part thereof may be formed of a non-adhesive-force-reducing pressure-sensitive adhesive. For example, when the pressure-sensitive adhesive layer 12 has a single-layer structure, the entire pressure-sensitive adhesive layer 12 may be formed of a non-adhesive-force-reducing pressure-sensitive adhesive, or a predetermined portion (for example, a region located outside a central region as a region to which a wafer ring is to be attached) of the pressure-sensitive adhesive layer 12 may be formed of a non-adhesive-force-reducing pressure-sensitive adhesive, and the other portion (for example, a central region as a region to which a semiconductor wafer is to be attached) may be formed of a pressure-sensitive adhesive-force-reducing pressure-sensitive adhesive. In addition, when the adhesive layer 12 has a laminated structure, all of the adhesive layers in the laminated structure may be formed of the adhesive force non-reducing adhesive, or part of the adhesive layers in the laminated structure may be formed of the adhesive force non-reducing adhesive.
A pressure-sensitive adhesive in a form in which a curable pressure-sensitive adhesive is cured by irradiation with radiation in advance (a radiation-curable pressure-sensitive adhesive after irradiation with radiation) exhibits tackiness due to a polymer component contained therein although its adhesive strength decreases by irradiation with radiation, and can exhibit the minimum adhesive strength required for a pressure-sensitive adhesive layer of a dicing tape in a dicing step or the like. When a radiation-curable pressure-sensitive adhesive that has been irradiated with radiation is used, the entire pressure-sensitive adhesive layer 12 may be formed of the radiation-curable pressure-sensitive adhesive that has been irradiated with radiation, or a part of the pressure-sensitive adhesive layer 12 may be formed of the radiation-curable pressure-sensitive adhesive that has been irradiated with radiation and the remaining part may be formed of the radiation-curable pressure-sensitive adhesive that has not been irradiated with radiation, in the plane extending direction of the pressure-sensitive adhesive layer 12.
As the pressure-sensitive adhesive, a known or conventional pressure-sensitive adhesive can be used, and an acrylic adhesive or a rubber adhesive containing an acrylic polymer as a base polymer can be preferably used. When the adhesive layer 12 contains an acrylic polymer as the pressure-sensitive adhesive, the acrylic polymer preferably contains a constituent unit derived from a (meth) acrylate ester as a polymer having the largest mass proportion of the constituent unit. As the acrylic polymer, for example, the acrylic polymer described as the acrylic polymer contained in the additive type radiation curing pressure-sensitive adhesive can be used.
The pressure-sensitive adhesive layer 12 or the pressure-sensitive adhesive forming the pressure-sensitive adhesive layer 12 may contain, in addition to the above-mentioned components, known or conventional additives used in pressure-sensitive adhesive layers, such as a crosslinking accelerator, a tackifier, an antioxidant, and a colorant (a pigment, a dye, etc.). Examples of the colorant include compounds that are colored by irradiation with radiation. When a compound which is colored by irradiation with radiation is contained, only the portion irradiated with radiation can be colored. The compound which is colored by irradiation with radiation is colorless or pale before irradiation with radiation, and is colored by irradiation with radiation, and examples thereof include leuco dyes and the like. The amount of the compound which is colored by irradiation with radiation is not particularly limited and can be selected as appropriate.
The thickness of the pressure-sensitive adhesive layer 12 is not particularly limited, and when the pressure-sensitive adhesive layer 12 contains a radiation-curable pressure-sensitive adhesive, from the viewpoint of achieving a balance in the adhesive strength of the pressure-sensitive adhesive layer 12 to the die-bonding film 20 before and after radiation curing, the thickness is preferably about 1 to 50 μm, more preferably 2 to 30 μm, and still more preferably 5 to 25 μm.
(chip bonding film)
The die-bonding film 20 has a structure that can function as an adhesive exhibiting thermosetting properties for die bonding. The die bond film 20 can be cut by applying a tensile stress, and can be used by cutting it by applying a tensile stress.
As described above, the die-bonding film 20 has a storage modulus E' at 25 ℃ of 3 to 5GPa, preferably 3.2 to 4.8GPa, measured at a frequency of 10 Hz. By setting the storage modulus E' to 3GPa or more, when stress is applied in a relatively slow speed range at room temperature, the die bond film is less likely to move in the vertical direction (thickness direction), and when not only a semiconductor chip that is not multilayered but also a semiconductor chip in which circuit layers are multilayered is used, the die bond film is less likely to float from the dicing tape during and after expansion at room temperature (including, for example, a cleaning step and a period before picking up). In addition, when the singulated die-bonding film is to be picked up from the dicing tape and peeled off, stress is applied in a fast speed range, and thus the pickup can be easily performed. Further, by setting the storage modulus E' to 5GPa or less, the wettability of the die-bonding film to an adherend is excellent at the time of die bonding, so that the suitability for die bonding is excellent, and the die bonding (temporary fixation) of a semiconductor chip to an adherend can be performed satisfactorily.
The die-bonding film 20 preferably has a storage modulus E' of 4 to 7GPa, more preferably 4.5 to 6.5GPa, at-15 ℃ as measured at a frequency of 10 Hz. If the storage modulus E' is within the above range, the die-bonding film is less likely to move in the vertical direction (thickness direction) when stress is applied at low temperature, and when not only a semiconductor chip that is not multilayered but also a semiconductor chip in which circuit layers are multilayered is used, the die-bonding film is less likely to float from the dicing tape during and after the cooling expansion (for example, during the period before returning to room temperature). In addition, the die bond film can be easily cut by cooling expansion.
The storage modulus G' of the die-bonding film 20 at 130 ℃ measured at a frequency of 1Hz is preferably 0.03 to 0.7MPa, more preferably 0.1 to 0.6 MPa. Accordingly, the storage modulus E' at 25 ℃ is easily controlled to be within the above range, and therefore, the floating is less likely to occur during and after the expansion at normal temperature and during the expansion by cooling, and the suitability for die bonding to an adherend also tends to be improved.
The loss modulus G' of the die-bonding film 20 at 130 ℃ measured at a frequency of 1Hz is preferably 0.01 to 0.1MPa, more preferably 0.02 to 0.08 MPa. This makes it possible to further prevent the chip from floating when the chip is bonded.
The die-bonding film 20 preferably has a storage modulus E' at 150 ℃ measured at a frequency of 10Hz of 20 to 200MPa, more preferably 22 to 150MPa, after thermosetting. When a semiconductor chip is die-bonded to an adherend in the form of a semiconductor chip with a die bonding film and then a wire bonding step described later is performed, the die bonding film may be heated to about 150 ℃ in the wire bonding step by heat generated by heating at the time of die bonding, but by causing the die bonding film 20 to exhibit a storage modulus E' in the above range at 150 ℃ after thermosetting, the die bonding film after thermosetting is moderately hardened, and even if the temperature is raised to about 150 ℃ in the wire bonding step, the semiconductor chip is less likely to move by an impact of wire bonding, and a force is easily transmitted to a wire bonding pad, whereby wire bonding can be performed appropriately.
The die-bonding film 20 preferably exhibits a storage modulus E' at 250 ℃ measured at a frequency of 10Hz after thermosetting of 20 to 200MPa, more preferably 22 to 150 MPa. As a reliability evaluation of the semiconductor-related component, a moisture-resistant solder reflow test in which the semiconductor-related component is heated to about 250 ℃ is generally performed, and by causing the die-bonding film 20 to exhibit the storage modulus E' in the above range at 250 ℃ after thermal curing, peeling of the die-bonding film from the adherend can be made less likely to occur even when heated to about 250 ℃ in the moisture-resistant solder reflow test.
After the thermosetting of the die-bonding film, the following means: the die bond film was thermally cured at 175 ℃ for 1 hour. After the heat curing, the die-bonding film may be incompletely cured, or may be cured to a state in which the curing is hardly continued (complete curing) (for example, after the incomplete curing, further curing (a post-curing step, etc., described later) is performed, and then the curing is performed).
In the present embodiment, the die-bonding film 20 and the adhesive constituting the die-bonding film 20 may contain a thermosetting resin and, for example, a thermoplastic resin as an adhesive component, or may contain a thermoplastic resin having a thermosetting functional group capable of reacting with a curing agent to form a bond. When the adhesive constituting the die-bonding film 20 contains a thermoplastic resin having a thermosetting functional group, the adhesive does not necessarily contain a thermosetting resin (epoxy resin or the like). The die-bonding film 20 may have either a single-layer structure or a multi-layer structure.
When the die-bonding film 20 contains a thermosetting resin together with a thermoplastic resin, examples of the thermosetting resin include: epoxy resins, phenol resins, amino resins, unsaturated polyester resins, polyurethane resins, silicone resins, thermosetting polyimide resins, and the like. The thermosetting resin may be used alone or in combination of two or more. An epoxy resin is preferable as the thermosetting resin because of a tendency that the content of ionic impurities and the like which may cause corrosion of a semiconductor chip to be die bonded is small. As the curing agent for the epoxy resin, a phenol resin is preferable.
Examples of the epoxy resin include: bisphenol a type, bisphenol F type, bisphenol S type, brominated bisphenol a type, hydrogenated bisphenol a type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type, o-cresol novolac type, trishydroxyphenylmethane type, tetrakis (phenylhydroxy) ethane (Tetraphenylolethane) type, hydantoin type, triglycidyl isocyanurate type, glycidyl amine type epoxy resins, and the like. Among them, novolac type epoxy resins, biphenyl type epoxy resins, trishydroxyphenylmethane type epoxy resins, and tetra (phenylhydroxy) ethane (Tetraphenylolethane) type epoxy resins are preferable because they are rich in reactivity with a phenolic resin as a curing agent and excellent in heat resistance.
Examples of the phenolic resin which can function as a curing agent for an epoxy resin include: and a novolak phenol resin, a resol phenol resin, and a polyoxyethylene such as a poly-p-oxystyrene. Examples of the novolak phenol resin include: phenol novolac resins, phenol aralkyl resins, cresol novolac resins, tert-butylphenol novolac resins, nonylphenol novolac resins, and the like. The phenol resin may be used alone or in combination of two or more. Among them, phenol novolac resins and phenol aralkyl resins are preferable from the viewpoint of the tendency of improving the connection reliability of an epoxy resin used as an adhesive for die bonding when used as a curing agent for the adhesive.
In the die-bonding film 20, the phenolic resin is contained in an amount such that the hydroxyl group in the phenolic resin is preferably 0.5 to 2.0 equivalents, more preferably 0.7 to 1.5 equivalents, relative to 1 equivalent of the epoxy group in the epoxy resin component, from the viewpoint of sufficiently advancing the curing reaction of the epoxy resin and the phenolic resin.
When the die-bonding film 20 contains a thermosetting resin, the content of the thermosetting resin is preferably 5 to 60% by mass, and more preferably 10 to 50% by mass, based on the total mass of the die-bonding film 20, from the viewpoint of allowing the die-bonding film 20 to suitably exhibit a function as a thermosetting adhesive.
Examples of the thermoplastic resin include: polyamide resins such as natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic ester copolymer, polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin, 6-nylon, and 6, 6-nylon; saturated polyester resins such as phenoxy resins, acrylic resins, PET, PBT and the like; polyamide-imide resins, fluorine resins, and the like. The thermoplastic resin may be used alone or in combination of two or more. The thermoplastic resin is preferably an acrylic resin because it has low ionic impurities and high heat resistance, and thus the bonding reliability by the die-bonding film 20 is easily ensured.
The acrylic resin is preferably a polymer containing a constituent unit derived from a (meth) acrylate ester as a constituent unit having the largest mass ratio. Examples of the (meth) acrylate include: examples of the (meth) acrylate include (meth) acrylates that form acrylic polymers that can be contained in the additive type radiation curing pressure-sensitive adhesive. The acrylic resin may contain a constituent unit derived from another monomer component copolymerizable with the (meth) acrylate. Examples of the other monomer components include: a carboxyl group-containing monomer; an acid anhydride monomer; a hydroxyl-containing monomer; a glycidyl group-containing monomer; a sulfonic acid group-containing monomer; a monomer containing a phosphoric acid group; functional group-containing monomers such as acrylamide and acrylonitrile; specifically, other monomer components exemplified as other monomer components constituting the acrylic polymer that can be contained in the radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 can be used. From the viewpoint of achieving a high cohesive force of the die-bonding film 20, the acrylic resin is preferably a copolymer of a (meth) acrylate (particularly, an alkyl (meth) acrylate in which the alkyl group has 4 or less carbon atoms), a carboxyl group-containing monomer, a nitrogen atom-containing monomer, and a polyfunctional monomer (particularly, a polyglycidyl-based polyfunctional monomer), and more preferably a copolymer of ethyl acrylate, butyl acrylate, acrylic acid, acrylonitrile, and polyglycidyl (meth) acrylate.
The glass transition temperature (Tg) of the acrylic resin is preferably 5 to 35 ℃, more preferably 10 to 30 ℃ from the viewpoint of easily making each of the storage modulus and the loss modulus within a desired range.
When the die-bonding film 20 contains a thermosetting resin and a thermoplastic resin, the content ratio of the thermoplastic resin is preferably 30 to 70% by mass, more preferably 40 to 60% by mass, and even more preferably 45 to 55% by mass, with respect to the total mass of the organic components (for example, the thermosetting resin, the thermoplastic resin, the curing catalyst, and the like, the silane coupling agent, and the dye) other than the filler in the die-bonding film 20, from the viewpoint of easily setting each of the storage modulus and the loss modulus within a desired range by adjusting the content ratio with the thermosetting resin.
When the die-bonding film 20 contains a thermoplastic resin having a thermosetting functional group, an acrylic resin having a thermosetting functional group can be used as the thermoplastic resin, for example. The acrylic resin in the thermosetting functional group-containing acrylic resin preferably contains a constituent unit derived from a (meth) acrylate ester as a constituent unit having the largest mass ratio. Examples of the (meth) acrylate include: examples of the (meth) acrylate forming the acrylic polymer that can be contained in the additive type radiation curing pressure-sensitive adhesive include (meth) acrylates. On the other hand, examples of the thermosetting functional group in the thermosetting functional group-containing acrylic resin include: glycidyl, carboxyl, hydroxyl, isocyanate, and the like. Among them, glycidyl group and carboxyl group are preferable. That is, as the acrylic resin having a thermosetting functional group, a glycidyl group-containing acrylic resin and a carboxyl group-containing acrylic resin are particularly preferable. The curing agent is preferably contained together with the thermosetting functional group-containing acrylic resin, and examples of the curing agent include those exemplified as a crosslinking agent that can be contained in the radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12. When the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group, a polyphenol compound is preferably used as the curing agent, and for example, the above-mentioned various phenol resins can be used.
The die-bonding film 20 preferably contains a filler. By compounding a filler into the die-bond film 20, the above-described respective storage modulus and loss modulus of the die-bond film 20 can be easily adjusted. Further, physical properties such as electrical conductivity, thermal conductivity, and elastic modulus can be adjusted. Examples of the filler include inorganic fillers and organic fillers, and inorganic fillers are particularly preferable. Examples of the inorganic filler include: aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica, amorphous silica, and simple metal and alloy such as aluminum, gold, silver, copper, and nickel, amorphous carbon black, graphite, and the like. The filler may have various shapes such as a spherical shape, a needle shape, and a flake shape. The filler may be used alone or in combination of two or more.
The average particle diameter of the filler is preferably 0.005 to 10 μm, more preferably 0.005 to 1 μm. When the average particle diameter is 0.005 μm or more, wettability and adhesiveness to an adherend such as a semiconductor wafer are further improved. When the average particle diameter is 10 μm or less, the effect of the filler added to impart the above-described characteristics can be sufficiently exhibited, and heat resistance can be ensured. The average particle diameter of the filler can be determined, for example, by using a photometric particle size distribution meter (for example, trade name "LA-910", manufactured by horiba, Ltd.).
When the die-bonding film 20 contains a filler, the content ratio of the filler is preferably 30 to 70 mass%, more preferably 40 to 60 mass%, and still more preferably 42 to 55 mass% with respect to the total mass of the die-bonding film 20, from the viewpoint of easily setting each of the storage modulus and the loss modulus in a desired range.
The die-bonding film 20 may contain other components as necessary. Examples of the other components include: curing catalysts, flame retardants, silane coupling agents, ion trapping agents, dyes, and the like. Examples of the flame retardant include: antimony trioxide, antimony pentoxide, brominated epoxy resins, and the like. Examples of the silane coupling agent include: beta- (3, 4-epoxycyclohexyl) ethyltrimethoxysilane, gamma-glycidoxypropyltrimethoxysilane, gamma-glycidoxypropylmethyldiethoxysilane, etc. Examples of the ion scavenger include: hydrotalcites, bismuth hydroxide, benzotriazole, and the like. The other additives may be used alone or in combination of two or more.
In particular, from the viewpoint of easily setting the storage modulus and the loss modulus to be within desired ranges, it is preferable that the die-bonding film 20 contains a thermoplastic resin (particularly, an acrylic resin), a thermosetting resin, and a filler, and that the content ratio of the thermoplastic resin (particularly, the acrylic resin) to the total mass of the organic components other than the filler in the die-bonding film 20 is 30 to 70 mass% (preferably 40 to 60 mass%, more preferably 45 to 55 mass%), and the content ratio of the filler to the total mass of the die-bonding film 20 is 30 to 70 mass% (preferably 40 to 60 mass%, more preferably 42 to 55 mass%).
The thickness of the die-bonding film 20 (total thickness in the case of a laminate) is not particularly limited, and is, for example, 1 to 200 μm. The upper limit is preferably 100. mu.m, more preferably 80 μm. The lower limit is preferably 3 μm, more preferably 5 μm.
The glass transition temperature (Tg) of the die-bonding film 20 is preferably 0 ℃ or higher, and more preferably 10 ℃ or higher. When the glass transition temperature is 0 ℃ or higher, the die bond film 20 can be easily cut by cooling expansion. The upper limit of the glass transition temperature of the die-bonding film 20 is, for example, 100 ℃.
As the die bond film 20, a single layer die bond film shown in fig. 1 can be used. In the present specification, a single layer refers to a layer having the same composition, and includes a form in which a plurality of layers having the same composition are stacked. However, the die bond film in the dicing die bond film of the present invention is not limited to this example, and may have a multilayer structure in which two or more kinds of adhesive films having different compositions are laminated.
The dicing die-bonding film 1 as one embodiment of the dicing die-bonding film of the present invention can be manufactured, for example, as follows. First, the substrate 11 can be obtained by forming a film by a known or conventional film forming method. Examples of the film forming method include: a calendering film-forming method, a casting method in an organic solvent, a inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, a dry lamination method, and the like.
Then, a composition (adhesive composition) for forming an adhesive layer, which contains an adhesive for forming the adhesive layer 12, a solvent, and the like, is applied to the substrate 11 to form a coating film, and then the coating film is cured by desolvation, curing, and the like as necessary, whereby the adhesive layer 12 can be formed. Examples of the coating method include: known or conventional coating methods such as roll coating, screen coating, gravure coating, and the like. The solvent removal is carried out at a temperature of 80 to 150 ℃ for 0.5 to 5 minutes. After the pressure-sensitive adhesive composition is applied to the separator to form a coating film, the coating film may be cured under the above-described desolvation conditions to form the pressure-sensitive adhesive layer 12. Then, the adhesive layer 12 is bonded to the substrate 11 together with the separator. The dicing tape 10 can be manufactured according to the above operations.
First, a composition (adhesive composition) for forming the die-bonding film 20 containing a resin, a filler, a curing catalyst, a solvent, and the like is prepared as the die-bonding film 20. Then, the adhesive composition is applied to the separator to form a coating film, and the coating film is cured by desolvation, curing, or the like as necessary to form the die-bonding film 20. The coating method is not particularly limited, and examples thereof include known or conventional coating methods such as roll coating, screen coating, and gravure coating. The solvent removal is carried out, for example, at a temperature of 70 to 160 ℃ for 1 to 5 minutes.
Then, the separators are peeled off from the dicing tape 10 and the die-bonding film 20, respectively, and the die-bonding film 20 and the adhesive layer 12 are bonded so as to form bonding surfaces. The bonding may be performed by, for example, crimping. In this case, the lamination temperature is not particularly limited, but is preferably 30 to 50 ℃, and more preferably 35 to 45 ℃. The linear pressure is not particularly limited, but is preferably, for example, 0.1 to 20kgf/cm, more preferably 1 to 10 kgf/cm.
In the case where the pressure-sensitive adhesive layer 12 is a pressure-sensitive adhesive layer (radiation-curable pressure-sensitive adhesive layer) formed of a radiation-curable pressure-sensitive adhesive as described above, when the pressure-sensitive adhesive layer 12 is irradiated with radiation such as ultraviolet light after the die-bonding film 20 is bonded, the pressure-sensitive adhesive layer 12 is irradiated with radiation from the base 11 side, for example, in an amount of 50 to 500mJ, preferably 100 to 300 mJ. In the dicing die-bonding film 1, the region (irradiation region R) to be irradiated as a measure for reducing the adhesive strength of the adhesive layer 12 is usually a region other than the peripheral portion of the bonding region of the die-bonding film 20 in the adhesive layer 12. When the irradiation region R is locally provided, the irradiation region R may be provided through a photomask on which a pattern corresponding to a region other than the irradiation region R is formed. In addition, a method of forming the irradiation region R by irradiating the irradiation region R with a spot-like radiation may be mentioned.
The dicing die-bonding film 1 shown in fig. 1, for example, can be produced according to the above operations. In the dicing die-bonding film 1, a spacer (not shown) may be provided on the die-bonding film 20 side so as to cover at least the die-bonding film 20. When the die bond film 20 is smaller in size than the adhesive layer 12 of the dicing tape 10 and there is a region of the adhesive layer 12 where the die bond film 20 is not bonded, for example, a separator may be provided so as to cover at least the die bond film 20 and the adhesive layer 12. The separator is an element for protecting at least the die bond film 20 (e.g., the die bond film 20 and the adhesive layer 12) from being exposed, and is peelable from the cut die bond film 1 when used. Examples of the separator include: polyethylene terephthalate (PET) film, polyethylene film, polypropylene film, plastic film surface-coated with a release agent such as a fluorine-based release agent or an acrylic long-chain alkyl ester-based release agent, paper, and the like.
[ method for manufacturing semiconductor device ]
The dicing die-bonding film of the present invention can be used to manufacture a semiconductor device. Specifically, the semiconductor device can be manufactured by a manufacturing method including the steps of: a step (which may be referred to as "step a") of attaching a semiconductor wafer divided body including a plurality of semiconductor chips or a semiconductor wafer capable of being singulated into a plurality of semiconductor chips to the die-bonding film side of the dicing die-bonding film of the present invention; a step (sometimes referred to as "step B") of expanding the dicing tape in the dicing die-bonding film of the invention at a relatively low temperature to cut at least the die-bonding film and obtain a semiconductor chip with the die-bonding film; a step (sometimes referred to as "step C") of expanding the dicing tape under a relatively high temperature condition to widen a gap between the semiconductor chips with the die bond film; and a step (sometimes referred to as "step D") of picking up the semiconductor chip with the die-bonding film.
The divided body of the semiconductor wafer including the plurality of semiconductor chips or the semiconductor wafer capable of being singulated into the plurality of semiconductor chips used in the step a can be obtained as follows. First, as shown in fig. 2a and 2 b, the dividing grooves 30a are formed in the semiconductor wafer W (dividing groove forming step). The semiconductor wafer W has a 1 st surface Wa and a 2 nd surface Wb. Various semiconductor elements (not shown) have been formed on the 1 st surface Wa side of the semiconductor wafer W, and wiring structures and the like (not shown) required for the semiconductor elements have also been formed on the 1 st surface Wa. After the wafer processing tape T1 having the adhesive surface T1a is bonded to the 2 nd surface Wb side of the semiconductor wafer W, a dividing groove 30a having a predetermined depth is formed in the 1 st surface Wa side of the semiconductor wafer W by using a rotary cutter such as a dicing device in a state where the semiconductor wafer W is held by the wafer processing tape T1. The dividing grooves 30a are gaps for separating the semiconductor wafer W into semiconductor chip units (the dividing grooves 30a are schematically shown by thick lines in fig. 2 to 4).
Then, as shown in fig. 2 (c), the wafer processing tape T2 having the adhesive surface T2a is bonded to the 1 st surface Wa side of the semiconductor wafer W, and the wafer processing tape T1 is peeled from the semiconductor wafer W.
Then, as shown in fig. 2 d, the semiconductor wafer W is thinned to a predetermined thickness by grinding from the 2 nd surface Wb in a state where the semiconductor wafer W is held on the wafer processing tape T2 (wafer thinning step). The grinding process may be performed using a grinding apparatus having a grinding stone. Through this wafer thinning step, the semiconductor wafer 30A that can be singulated into a plurality of semiconductor chips 31 can be formed in the present embodiment. Specifically, the semiconductor wafer 30A has a portion (connection portion) where portions to be singulated into the plurality of semiconductor chips 31 are connected on the 2 nd surface Wb side. The thickness of the connection portion in the semiconductor wafer 30A, that is, the distance between the 2 nd surface Wb of the semiconductor wafer 30A and the 2 nd surface Wb-side tip of the dividing groove 30A is appropriately selected depending on the semiconductor device to be manufactured.
(Process A)
In step a, a semiconductor wafer divided body including a plurality of semiconductor chips or a semiconductor wafer capable of being singulated into a plurality of semiconductor chips is attached to the dicing die-bonding film 1 on the die-bonding film 20 side.
In one embodiment of the step a, as shown in fig. 3 (a), the semiconductor wafer 30A held by the wafer processing tape T2 is bonded to the die bond film 20 of the dicing die bond film 1. Then, as shown in fig. 3 (b), the wafer processing tape T2 is peeled from the semiconductor wafer 30A. When the pressure-sensitive adhesive layer 12 in the dicing die-bonding film 1 is a radiation-curable pressure-sensitive adhesive layer, instead of the irradiation with radiation described above in the production process of the dicing die-bonding film 1, the pressure-sensitive adhesive layer 12 may be irradiated with radiation such as ultraviolet rays from the base material 11 side after the semiconductor wafer 30A is bonded to the die-bonding film 20. The irradiation dose is, for example, 50 to 500mJ, preferably 100 to 300 mJ. In the dicing die-bonding film 1, the region irradiated with the radiation (irradiation region R shown in fig. 1) as a measure for reducing the adhesive strength of the adhesive layer 12 is, for example, a region other than the peripheral edge portion of the bonding region of the die-bonding film 20 in the adhesive layer 12.
(Process B)
In step B, the dicing tape 10 in the dicing die-bonding film 1 is extended at a relatively low temperature to cut at least the die-bonding film 20, and the semiconductor chip with the die-bonding film is obtained.
In one embodiment of step B, first, the ring frame 41 is attached to the adhesive layer 12 of the dicing tape 10 in the dicing die-bonding film 1, and then the dicing die-bonding film 1 with the semiconductor wafer 30A is fixed to the holding tool 42 of the expanding apparatus as shown in fig. 4 (a).
Then, as shown in fig. 4 (b), the first expanding step (cooling expanding step) under relatively low temperature conditions is performed to singulate the semiconductor wafer 30A into a plurality of semiconductor chips 31, and the die bonding film 20 obtained by cutting the die bonding film 1 is cut into small die bonding films 21, thereby obtaining the semiconductor chips 31 with die bonding films. In the cooling and spreading step, the hollow cylindrical jacking member 43 provided in the spreading device is brought into contact with the dicing tape 10 on the lower side of the dicing die-bonding film 1 in the drawing and is raised, and the dicing tape 10 of the dicing die-bonding film 1 to which the semiconductor wafer 30A is bonded is spread so as to be stretched along the two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30A. The expansion is performed under conditions such that a tensile stress in the range of 15 to 32MPa, preferably 20 to 32MPa is generated in the dicing tape 10. The temperature condition in the cooling expansion step is, for example, 0 ℃ or lower, preferably-20 to-5 ℃, more preferably-15 to-5 ℃, and still more preferably-15 ℃. The expanding speed (speed for raising the jack-up member 43) in the cooling and expanding step is preferably 0.1 to 100 mm/sec. The amount of expansion in the cooling expansion step is preferably 3 to 16 mm.
When the semiconductor wafer 30A capable of being singulated into a plurality of semiconductor chips is used in the step B, a portion of the semiconductor wafer 30A which is thin and is likely to have cracks is cut, and is singulated into the semiconductor chips 31. At the same time, in the step B, the die bond film 20 that is in close contact with the pressure-sensitive adhesive layer 12 of the expanded dicing tape 10 is suppressed in deformation in each region in which each semiconductor chip 31 is in close contact with, but is not suppressed in deformation at a position in the direction perpendicular to the dividing groove between the semiconductor chips 31 in the drawing, and in this state, the tensile stress generated in the dicing tape 10 acts. As a result, the die-bonding film 20 is cut at a position in a direction perpendicular to the dividing groove between the semiconductor chips 31. After the cutting by the expansion, as shown in fig. 4 (c), the jack member 43 is lowered to release the expanded state of the dicing tape 10.
(Process C)
In the step C, the dicing tape 10 is extended under a relatively high temperature condition to widen the interval between the semiconductor chips with the die bond film.
In one embodiment of step C, first, as shown in fig. 5 (a), the 2 nd expansion step (room temperature expansion step) under relatively high temperature conditions is performed to widen the distance (spacing distance) between the semiconductor chips 31 with the die bond film. In step C, the hollow cylindrical jacking member 43 provided in the expanding device is raised again to expand the dicing tape 10 for dicing the die-bonding film 1. The temperature in the second expansion step 2 is, for example, 10 ℃ or higher, preferably 15 to 30 ℃. The expanding speed (speed for raising the jack-up member 43) in the 2 nd expanding step is, for example, 0.1 to 10 mm/sec, preferably 0.3 to 1 mm/sec. The expansion amount in the 2 nd expansion step is, for example, 3 to 16 mm. In the step C, the pitch of the semiconductor chips 31 with a die-bonding film is increased to such an extent that the semiconductor chips 31 with a die-bonding film can be picked up from the dicing tape 10 in an appropriate manner in a pickup step described later. After the distance is widened by the expansion, the jack member 43 is lowered as shown in fig. 5 (b), and the expanded state of the dicing tape 10 is released. From the viewpoint of suppressing the narrowing of the distance between the semiconductor chips 31 with the die bond film on the dicing tape 10 after the expanded state is released, it is preferable to heat and shrink the outer portion of the holding region of the semiconductor chips 31 in the dicing tape 10 before the expanded state is released.
After the step C, there may be provided a cleaning step of cleaning the semiconductor chip 31 side of the dicing tape 10 having the semiconductor chip 31 with a die bond film with a cleaning liquid such as water, if necessary.
(Process D)
In step D (pickup step), the singulated semiconductor chip with the die bond film is picked up. In one embodiment of the step D, after the cleaning step described above as necessary, the semiconductor chip 31 with the die bond film is picked up from the dicing tape 10 as shown in fig. 6. For example, the semiconductor chip 31 with a die bond film to be picked up is lifted up via the dicing tape 10 by raising the needle member 44 of the pickup mechanism below the dicing tape 10 in the drawing, and then is sucked and held by the suction jig 45. In the picking-up step, the needle member 44 is pushed up at a speed of, for example, 1 to 100 mm/sec and the needle member 44 is pushed up at a height of, for example, 100 to 500 μm.
The method of manufacturing a semiconductor device may further include a step other than the steps a to D. For example, in one embodiment, as shown in fig. 7 (a), the picked-up semiconductor chip 31 with a die bond film is temporarily fixed to the adherend 51 via the die bond film 21 (temporary fixing step). Examples of the adherend 51 include: lead frames, TAB (Tape automated bonding) films, wiring substrates, separately fabricated semiconductor chips, and the like. The shear adhesion strength of the die-bonding film 21 at 25 ℃ at the time of temporary fixation is preferably 0.2MPa or more, more preferably 0.2 to 10MPa, to the adherend 51. With the configuration in which the shear adhesion force of the die-bonding film 21 is 0.2MPa or more, it is possible to suppress shear deformation from occurring in the adhesive surface between the die-bonding film 21 and the semiconductor chip 31 or the adherend 51 due to ultrasonic vibration or heating in the wire bonding step described later, and to perform wire bonding appropriately. The shear adhesion strength of the die-bonding film 21 at 175 ℃ during temporary fixation is preferably 0.01MPa or more, and more preferably 0.01 to 5MPa, to the adherend 51.
Then, as shown in fig. 7 b, the electrode pad (not shown) of the semiconductor chip 31 and the terminal portion (not shown) of the adherend 51 are electrically connected by the bonding wire 52 (wire bonding step). The connection of the electrode pad of the semiconductor chip 31, the terminal portion of the adherend 51, and the bonding wire 52 can be achieved by ultrasonic welding with heating, and is performed so as not to thermally cure the die bonding film 21. As the bonding wire 52, for example, a gold wire, an aluminum wire, a copper wire, or the like can be used. The heating temperature of the wire in the wire bonding is, for example, 80 to 250 ℃, preferably 80 to 220 ℃. The heating time is several seconds to several minutes.
Then, as shown in fig. 7 c, the semiconductor chip 31 is sealed with a sealing resin 53 for protecting the semiconductor chip 31 and the bonding wire 52 on the adherend 51 (sealing step). In the sealing step, thermosetting of the die-bonding film 21 is performed. In the sealing step, the sealing resin 53 is formed by, for example, a transfer molding technique using a mold. As a constituent material of the sealing resin 53, for example, an epoxy resin can be used. In the sealing step, the heating temperature for forming the sealing resin 53 is, for example, 165 to 185 ℃, and the heating time is, for example, 60 seconds to several minutes. When the sealing resin 53 is not sufficiently cured in the sealing step, a post-curing step for completely curing the sealing resin 53 is performed after the sealing step. Even in the case where the die-bonding film 21 is not completely heat-cured in the sealing process, the complete heat curing of the die-bonding film 21 may be performed together with the sealing resin 53 in the post-curing process. In the post-curing step, the heating temperature is, for example, 165 to 185 ℃, and the heating time is, for example, 0.5 to 8 hours.
In the above-described embodiment, after the semiconductor chip 31 with the die-bonding film is temporarily fixed to the adherend 51 as described above, the wire bonding step is performed in a state where the die-bonding film 21 is not completely thermally cured. Instead of this configuration, in the above-described method for manufacturing a semiconductor device, the die-bonding film 21 may be thermally cured after the semiconductor chip 31 with the die-bonding film is temporarily fixed to the adherend 51, and then the wire bonding step may be performed.
In the method for manufacturing a semiconductor device, as another embodiment, a wafer thinning step shown in fig. 8 may be performed instead of the wafer thinning step described above with reference to fig. 2 (d). After the above-described process with reference to fig. 2 (c), in the wafer thinning step shown in fig. 8, the semiconductor wafer W is thinned to a predetermined thickness by grinding from the 2 nd surface Wb in a state where the semiconductor wafer W is held on the wafer processing tape T2, and the semiconductor wafer divided bodies 30B including the plurality of semiconductor chips 31 and held on the wafer processing tape T2 are formed. In the wafer thinning step, the wafer may be ground until the dividing groove 30a is exposed on the 2 nd surface Wb side (method 1), or the following method may be used: the wafer is ground from the 2 nd surface Wb side to just before the dividing groove 30a, and then a pressing force of the rotary grindstone against the wafer is applied to crack between the dividing groove 30a and the 2 nd surface Wb, thereby forming a semiconductor wafer divided body 30B (method 2). The depth from the 1 st surface Wa of the dividing groove 30a formed as described above with reference to fig. 2 (a) and 2 (b) is determined as appropriate depending on the method used. In fig. 8, the dividing groove 30a by the 1 st method or the dividing groove 30a by the 2 nd method and the cracks connected thereto are schematically shown by thick lines. In the above-described method for manufacturing a semiconductor device, in step a, the semiconductor wafer divided body 30B thus produced may be used as a semiconductor wafer divided body in place of the semiconductor wafer 30A, and the above-described steps with reference to fig. 3 to 7 may be performed.
Fig. 9 (a) and 9 (B) show step B of this embodiment, that is, step 1 of expanding (cooling expansion step) after bonding the semiconductor wafer segment 30B to the dicing die-bonding film 1. In step B of this embodiment, the hollow cylindrical jacking member 43 provided in the expanding device is brought into contact with the dicing tape 10 and raised on the lower side of the dicing die-bonding film 1 in the drawing, and expands the dicing tape 10 of the dicing die-bonding film 1 to which the semiconductor wafer segments 30B are bonded so as to stretch along the two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer segments 30B. The tensile stress in this expansion can be set appropriately. The temperature condition in the cooling expansion step is, for example, 0 ℃ or lower, preferably-20 to-5 ℃, more preferably-15 to-5 ℃, and still more preferably-15 ℃. The expanding speed (speed for raising the jack-up member 43) in the cooling and expanding step is preferably 1 to 400 mm/sec. The amount of expansion in the cooling expansion step is preferably 1 to 300 mm. By the cooling and spreading step, the die bond film 20 obtained by cutting the die bond film 1 is cut into the small die bond films 21, and the semiconductor chip 31 with the die bond film is obtained. Specifically, in the cooling and spreading step, the die bond film 20 that is in close contact with the pressure-sensitive adhesive layer 12 of the spread dicing tape 10 is suppressed from deforming in each region where the semiconductor chips 31 of the semiconductor wafer divided body 30B are in close contact with each other, and such a deformation suppressing action is not generated at a position in the direction perpendicular to the dividing groove 30a between the semiconductor chips 31 in the drawing, and the tensile stress generated in the dicing tape 10 in this state acts. As a result, the die-bonding film 20 is cut at a position in the direction perpendicular to the dividing groove 30a between the semiconductor chips 31 in the drawing.
In the above-described method for manufacturing a semiconductor device, as still another embodiment, a semiconductor wafer 30C produced as follows may be used instead of the semiconductor wafer 30A or the semiconductor wafer divided bodies 30B used in the step a.
In this embodiment, as shown in fig. 10 (a) and 10 (b), first, the modified region 30b is formed in the semiconductor wafer W. The semiconductor wafer W has a 1 st surface Wa and a 2 nd surface Wb. Various semiconductor elements (not shown) have been formed on the 1 st surface Wa side of the semiconductor wafer W, and wiring structures and the like (not shown) required for the semiconductor elements have also been formed on the 1 st surface Wa. After the wafer processing tape T3 having the adhesive surface T3a is bonded to the 1 st surface Wa side of the semiconductor wafer W, the semiconductor wafer W is irradiated with laser light having a focal point located inside the wafer from the side opposite to the wafer processing tape T3 along the pre-dividing line in a state where the semiconductor wafer W is held on the wafer processing tape T3, and the modified region 30b is formed in the semiconductor wafer W by ablation due to multiphoton absorption. The modified region 30b is a weakened region for separating the semiconductor wafer W into semiconductor chip units. A method of forming the modified regions 30b on the preliminary dividing lines in the semiconductor wafer by laser irradiation is described in detail in, for example, japanese patent application laid-open No. 2002-192370, and the laser irradiation conditions in this embodiment can be appropriately adjusted within the following ranges, for example.
< laser irradiation Condition >
(A) Laser
(B) Lens for condensing light
Multiplying power of 100 times or less
NA 0.55
Transmittance to laser wavelength of 100% or less
(C) The moving speed of the mounting table for mounting the semiconductor substrate is below 280 mm/s
Then, as shown in fig. 10C, the semiconductor wafer W is thinned to a predetermined thickness by grinding from the 2 nd surface Wb in a state where the semiconductor wafer W is held on the wafer processing tape T3, thereby forming a semiconductor wafer 30C which can be singulated into a plurality of semiconductor chips 31 (wafer thinning step). In the above-described method for manufacturing a semiconductor device, the steps described above with reference to fig. 3 to 7 may be performed in step a by using the semiconductor wafer 30C thus produced as a semiconductor wafer capable of being singulated in place of the semiconductor wafer 30A.
Fig. 11 (a) and 11 (B) show a step B in this embodiment, that is, a step 1 of expanding (cooling expansion step) after the semiconductor wafer 30C is bonded to the dicing die-bonding film 1. In the cooling and spreading step, the hollow cylindrical jacking member 43 provided in the spreading device is brought into contact with the dicing tape 10 and raised on the lower side of the dicing die-bonding film 1 in the drawing, and spreads the dicing tape 10 of the dicing die-bonding film 1 to which the semiconductor wafer 30C is bonded so as to be stretched in the two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30C. The tensile stress in this expansion can be set appropriately. The temperature condition in the cooling expansion step is, for example, 0 ℃ or lower, preferably-20 to-5 ℃, more preferably-15 to-5 ℃, and still more preferably-15 ℃. The expanding speed (speed for raising the jack-up member 43) in the cooling and expanding step is preferably 1 to 400 mm/sec. The amount of expansion in the cooling expansion step is preferably 1 to 300 mm. By the cooling and spreading step, the die bond film 20 obtained by cutting the die bond film 1 is cut into the small die bond films 21, and the semiconductor chip 31 with the die bond film is obtained. Specifically, in the cooling and spreading step, cracks are formed in the fragile modified region 30b in the semiconductor wafer 30C, and the semiconductor chips 31 are singulated. At the same time, in the cooling and spreading step, the die bond film 20 that is in close contact with the pressure-sensitive adhesive layer 12 of the spread dicing tape 10 is suppressed from being deformed in each region of the semiconductor wafer 30C in which the semiconductor chips 31 are in close contact with each other, and the deformation suppressing action is not generated at a position in the direction perpendicular to the crack formation position of the wafer in the drawing, and the tensile stress generated in the dicing tape 10 acts in this state. As a result, the die-bonding film 20 is cut at a position in a direction perpendicular to the crack formation position between the semiconductor chips 31 in the drawing.
In the method for manufacturing a semiconductor device, the dicing die-bonding film 1 can be used for obtaining a semiconductor chip with a die-bonding film as described above, and can also be used for obtaining a semiconductor chip with a die-bonding film when a plurality of semiconductor chips are stacked and mounted in 3 dimensions. Such 3-dimensional mounted semiconductor chips 31 may or may not have a spacer interposed therebetween together with the die-bonding film 21.
Examples
The present invention will be described in more detail with reference to the following examples, but the present invention is not limited to these examples.
Example 1
(preparation of dicing tape)
100 parts by mass of 2-ethylhexyl acrylate (2EHA), 19 parts by mass of 2-hydroxyethyl acrylate (HEA), 0.4 part by mass of benzoyl peroxide, and 80 parts by mass of toluene were charged into a reaction vessel equipped with a condenser tube, a nitrogen inlet tube, a thermometer, and a stirring device, and polymerization was carried out at 60 ℃ for 10 hours in a nitrogen flow to obtain a solution containing the acrylic polymer A.
To the solution containing the acrylic polymer a, 1.2 parts by mass of 2-methacryloyloxyethyl isocyanate (MOI) was added, and an addition reaction was performed at 50 ℃ for 60 hours in an air stream to obtain a solution containing the acrylic polymer a'.
Then, 1.3 parts by mass of a polyisocyanate compound (trade name "Coronate L", manufactured by tokyo corporation) and 3 parts by mass of a photopolymerization initiator (trade name "Irgacure 184", manufactured by BASF corporation) were added to 100 parts by mass of the acrylic polymer a' to prepare an adhesive composition a.
The obtained adhesive composition A was applied to the silicone-treated surface of the PET-based separator, and heated at 120 ℃ for 2 minutes to remove the solvent, thereby forming an adhesive layer A having a thickness of 10 μm. Then, an EVA film (115 μm thick, manufactured by GUNZE limited) as a base material was laminated on the exposed surface of the adhesive layer a, and stored at 23 ℃ for 72 hours to prepare a dicing tape a.
(production of chip bonding film)
100 parts by mass of an acrylic resin (trade name "SG-P3", manufactured by Nagase ChemteX Corporation, glass transition temperature 12 ℃), 45 parts by mass of an epoxy resin (trade name "JER 1001", manufactured by Mitsubishi chemical Corporation), 50 parts by mass of a phenol resin (trade name "MEH-7851 ss", manufactured by Minghe Kabushiki Kaisha), 190 parts by mass of spherical silica (trade name "SO-25R", manufactured by Admatech), and 0.6 part by mass of a curing catalyst (trade name "Curezol 2 PHZ", manufactured by Sizhou Kaisha) were added to methyl ethyl ketone and mixed to obtain an adhesive composition A having a solid content of 20% by mass. Then, the silicone-treated surface of the PET-based separator (thickness: 50 μm) was coated with the coating solution, and heated at 130 ℃ for 2 minutes to remove the solvent, thereby producing a die bond film A having a thickness of 10 μm. Table 1 shows the content ratio of the acrylic resin with respect to the total mass of the organic components (the total mass of the components other than the spherical silica) and the content ratio of the silica with respect to the total mass of the die bond film a in the die bond film a.
(preparation of dicing die-bonding film)
The PET-based separator was peeled off from the dicing tape a, and the die bond film a was attached to the exposed adhesive layer. In the attaching, the center of the dicing tape and the center position of the die-bonding film are aligned. In addition, a hand roller was used for bonding. A dicing die-bonding film having a laminated structure including a dicing tape and a die-bonding film was produced in accordance with the above operation.
Example 2
(production of chip bonding film)
100 parts by mass of an acrylic resin (trade name "SG-P3", manufactured by Nagase ChemteX Corporation, glass transition temperature 12 ℃), 45 parts by mass of an epoxy resin (trade name "JER 1001", manufactured by Mitsubishi chemical Corporation), 50 parts by mass of a phenol resin (trade name "MEH-7851 ss", manufactured by Minghe Kabushiki Kaisha), 200 parts by mass of spherical silica (trade name "SO-25R", manufactured by Admatech), and 1.0 part by mass of a curing catalyst (trade name "Curezol 2 PHZ", manufactured by Sizhou Kaisha) were added to methyl ethyl ketone and mixed to obtain an adhesive composition B having a solid content of 20% by mass. Then, the silicone-treated surface of the PET-based separator (thickness: 50 μm) was coated with the coating solution, and heated at 130 ℃ for 2 minutes to remove the solvent, thereby producing a die bond film B having a thickness of 10 μm. Table 1 shows the content ratio of the acrylic resin to the total mass of the organic components (the total mass of the components other than the spherical silica) and the content ratio of the silica to the total mass of the die bond film B in the die bond film B.
(preparation of dicing die-bonding film)
A dicing die-bonding film was produced in the same manner as in example 1, except that the die-bonding film B was used instead of the die-bonding film a.
Example 3
(production of chip bonding film)
100 parts by mass of an acrylic resin (trade name "SG-P3", manufactured by Nagase ChemteX Corporation, glass transition temperature 12 ℃), 45 parts by mass of an epoxy resin (trade name "JER 1001", manufactured by Mitsubishi chemical Corporation), 50 parts by mass of a phenol resin (trade name "MEH-7851 ss", manufactured by Minghe Kabushiki Kaisha), 130 parts by mass of spherical silica (trade name "SO-25R", manufactured by Admatech), and 0.4 part by mass of a curing catalyst (trade name "Curezol 2 PHZ", manufactured by Sizhou Kaisha) were added to methyl ethyl ketone and mixed to obtain an adhesive composition C having a solid content of 20% by mass. Then, the resulting film was coated on the silicone-treated surface of a PET-based separator (thickness: 50 μm), and heated at 130 ℃ for 2 minutes to remove the solvent, thereby producing a die bond film C having a thickness of 10 μm. Table 1 shows the content ratio of the acrylic resin with respect to the total mass of the organic components (the total mass of the components other than the spherical silica) and the content ratio of the silica with respect to the total mass of the die bond film C in the die bond film C.
(preparation of dicing die-bonding film)
A dicing die-bonding film was produced in the same manner as in example 1, except that the die-bonding film C was used instead of the die-bonding film a.
Comparative example 1
(production of chip bonding film)
100 parts by mass of an acrylic resin (trade name "SG-708-6", manufactured by Nagase ChemteX Corporation, glass transition temperature 4 ℃), 45 parts by mass of an epoxy resin (trade name "JER 1001", manufactured by Mitsubishi chemical Corporation), 50 parts by mass of a phenol resin (trade name "MEH-7851 ss", manufactured by Minghe Kabushiki Kaisha), 100 parts by mass of spherical silica (trade name "SO-25R", manufactured by Admatech), and 0.6 part by mass of a curing catalyst (trade name "Curezol 2 PHZ", manufactured by Sizhou Kaisha) were added to methyl ethyl ketone and mixed to obtain an adhesive composition D having a solid content of 20% by mass. Then, the resulting film was coated on the silicone-treated surface of a PET-based separator (thickness: 50 μm), and heated at 130 ℃ for 2 minutes to remove the solvent, thereby producing a die bond film D having a thickness of 10 μm. Table 1 shows the content ratio of the acrylic resin with respect to the total mass of the organic components (the total mass of the components other than the spherical silica) and the content ratio of the silica with respect to the total mass of the die bond film D in the die bond film D.
(preparation of dicing die-bonding film)
A dicing die-bonding film was produced in the same manner as in example 1, except that the die-bonding film D was used instead of the die-bonding film a.
Comparative example 2
(production of chip bonding film)
100 parts by mass of an acrylic resin (trade name "SG-70L", manufactured by Nagase ChemteX Corporation, glass transition temperature-13 ℃)40 parts by mass of an epoxy resin (trade name "JER 1001", manufactured by Mitsubishi chemical Corporation), 40 parts by mass of a phenol resin (trade name "MEH-7851 ss", manufactured by Minghe Kabushiki Kaisha), 200 parts by mass of spherical silica (trade name "SO-25R", manufactured by Admatech), and 0.6 part by mass of a curing catalyst (trade name "Curezol 2 PHZ", manufactured by Sizhou Kaisha) were added to methyl ethyl ketone and mixed to obtain an adhesive composition E having a solid content of 20% by mass. Then, the resulting film was coated on the silicone-treated surface of a PET-based separator (thickness: 50 μm), and heated at 130 ℃ for 2 minutes to remove the solvent, thereby producing a die bond film E having a thickness of 10 μm. Table 1 shows the content ratio of the acrylic resin to the total mass of the organic components (the total mass of the components other than the spherical silica) and the content ratio of the silica to the total mass of the die bond film E in the die bond film E.
(preparation of dicing die-bonding film)
A dicing die-bonding film was produced in the same manner as in example 1, except that the die-bonding film E was used instead of the die-bonding film a.
Comparative example 3
(production of chip bonding film)
100 parts by mass of an acrylic resin (trade name "SG-P3", manufactured by Nagase ChemteX Corporation, glass transition temperature 12 ℃), 45 parts by mass of an epoxy resin (trade name "JER 1001", manufactured by Mitsubishi chemical Corporation), 50 parts by mass of a phenol resin (trade name "MEH-7851 ss", manufactured by Minghe Kabushiki Kaisha), 100 parts by mass of spherical silica (trade name "SO-25R", manufactured by Admatech), and 0.5 part by mass of a curing catalyst (trade name "Curezol 2 PHZ", manufactured by Sizhou Kaisha) were added to methyl ethyl ketone and mixed to obtain an adhesive composition F having a solid content of 20% by mass. Then, the resulting film was coated on the silicone-treated surface of a PET-based separator (thickness: 50 μm), and heated at 130 ℃ for 2 minutes to remove the solvent, thereby producing a die bond film F having a thickness of 10 μm. Table 1 shows the content ratio of the acrylic resin with respect to the total mass of the organic components (the total mass of the components other than the spherical silica) and the content ratio of the silica with respect to the total mass of the die bond film F in the die bond film F.
(preparation of dicing die-bonding film)
A dicing die-bonding film was produced in the same manner as in example 1, except that the die-bonding film F was used instead of the die-bonding film a.
Comparative example 4
(production of chip bonding film)
100 parts by mass of an acrylic resin (trade name "SG-P3", manufactured by Nagase ChemteX Corporation, glass transition temperature 12 ℃), 45 parts by mass of an epoxy resin (trade name "JER 1001", manufactured by Mitsubishi chemical Corporation), 50 parts by mass of a phenol resin (trade name "MEH-7851 ss", manufactured by Minghe Kabushiki Kaisha), 250 parts by mass of spherical silica (trade name "SO-25R", manufactured by Admatech), and 0.5 part by mass of a curing catalyst (trade name "Curezol 2 PHZ", manufactured by Sizhou Kaisha) were added to methyl ethyl ketone and mixed to obtain an adhesive composition G having a solid content of 20% by mass. Then, the resulting film was coated on the silicone-treated surface of a PET-based separator (thickness: 50 μm), and heated at 130 ℃ for 2 minutes to remove the solvent, thereby producing a die bond film G having a thickness of 10 μm. Table 1 shows the content ratio of the acrylic resin with respect to the total mass of the organic components (the total mass of the components other than the spherical silica) and the content ratio of the silica with respect to the total mass of the die bond film G in the die bond film G.
(preparation of dicing die-bonding film)
A dicing die-bonding film was produced in the same manner as in example 1, except that the die-bonding film G was used instead of the die-bonding film a.
< evaluation >
The die-bonding films and dicing die-bonding films obtained in examples and comparative examples were evaluated as follows. The results are shown in Table 1.
(storage modulus E 'at 25 ℃ measured at a frequency of 10Hz, and storage modulus E' at-15 ℃ measured at a frequency of 10 Hz.)
From the die-bonding films obtained in each of examples and comparative examples, a long tape having a width of 4mm and a length of 40mm was cut with a dicing blade to prepare a test piece, and the dynamic storage modulus was measured in a tensile mode in a temperature range of-50 to 100 ℃ under the conditions of a frequency of 10Hz, a temperature rise rate of 5 ℃/min and an initial inter-chuck distance of 22.5mm with a solid viscoelasticity measuring apparatus (measuring apparatus: manufactured by Rheogel-E4000, UBM Co.). Then, the values at 25 ℃ and-15 ℃ were read to obtain their values as a storage modulus at 25 ℃ measured under a frequency of 10Hz and a storage modulus E' at-15 ℃ measured under a frequency of 10Hz, respectively. The evaluation results are shown in columns of "storage modulus E '(25 ℃, 10 Hz)" and "storage modulus E' (15 ℃, 10 Hz)" in Table 1, respectively.
(storage modulus G 'at 130 ℃ measured under the condition of frequency 1Hz, and loss modulus G' at 130 ℃ measured under the condition of frequency 1 Hz.)
The die bond films obtained in each of examples and comparative examples were laminated to 300 μm, and punched out into a circular shape by a punch of 10mm Φ to prepare a measurement sample. The storage modulus and loss modulus were measured at 75 to 150 ℃ with a measuring jig of 8 mm. phi. under the conditions of a gap of 250 μm, a temperature rise rate of 10 ℃/min, a frequency of 5rad/sec, and a strain of 10% (measuring apparatus: HAAKE MARSIII, manufactured by Thermoscientific). The values of storage modulus and loss modulus at 130 ℃ were then read and obtained as storage modulus G' at 130 ℃ measured under the condition of frequency 1Hz and loss modulus G "at 130 ℃ measured under the condition of frequency 1Hz, respectively. The evaluation results are shown in columns of "storage modulus G' (130 ℃ C., 1 Hz)" and "loss modulus G" (130 ℃ C., 1Hz) "in Table 1, respectively.
(storage modulus E 'at 150 ℃ measured under the condition of frequency 10Hz after thermal curing and storage modulus E' at 250 ℃ measured under the condition of frequency 10Hz after thermal curing.)
After the die bond films obtained in examples and comparative examples were heated at 175 ℃ for 1 hour to be cured, a long tape having a width of 4mm and a length of 40mm was cut out from the heat-cured die bond film by a dicing blade, and the dynamic storage modulus was measured in a tensile mode at a frequency of 10Hz, a temperature rise rate of 10 ℃/min, and an initial inter-chuck distance of 22.5mm in a solid viscoelasticity measuring apparatus (manufactured by RSAIII, レオメトリック Co., Ltd.) at a temperature range of 0 to 300 ℃. The values at 150 ℃ and 250 ℃ were then read to obtain their values as the storage modulus at 150 ℃ measured under the condition of frequency 10Hz after thermal curing and the storage modulus E' at 250 ℃ measured under the condition of frequency 10Hz after thermal curing, respectively. The evaluation results are shown in the columns "storage modulus after curing E '(150 ℃ C., 10 Hz)" and "storage modulus after curing E' (250 ℃ C., 10 Hz)" of Table 1, respectively.
(cuttability and lifting at the time of expansion by cooling)
A trade name "ML 300-Integration" (manufactured by tokyo co., ltd.) was used as a laser processing apparatus, and a modified region was formed inside a semiconductor wafer by irradiating laser light from the surface along a pre-dividing line in a lattice shape (10mm × 10mm) with a light converging point aligned inside a 12-inch semiconductor wafer. The laser irradiation was performed under the following conditions.
(A) Laser
(B) Lens for condensing light
Multiplying power of 50 times
NA 0.55
Transmittance at laser wavelength of 60%
(C) The moving speed of the mounting table on which the semiconductor substrate is mounted is 100 mm/sec
After forming a modified region in the semiconductor wafer, a protective tape for back grinding was attached to the front surface of the semiconductor wafer, and the back surface was ground with a back grinder (product name "DGP 8760", manufactured by DISCO Corporation) so that the thickness of the semiconductor wafer became 30 μm.
The semiconductor wafer having the modified region and the dicing ring were bonded to each other with the dicing die-bonding films obtained in examples and comparative examples. Then, the semiconductor wafer and the die bonding film were cut by a die separating device (trade name "DDS 2300", manufactured by disco corporation). Specifically, first, the semiconductor wafer and the die bond film were cleaved by cooling and spreading the film by a cooling and spreading unit under conditions of a temperature of-15 ℃, a spreading rate of 200 mm/sec, and a spreading amount of 12 mm. Then, room temperature expansion was carried out by a heating expansion unit under conditions of room temperature, an expansion rate of 1 mm/sec and an expansion amount of 7 mm. Then, the outer peripheral portion of the semiconductor chip was subjected to thermal contraction of the dicing tape at a heating temperature of 200 ℃, an air volume of 40L/min, a heating distance of 20mm, and a rotation speed of 5 °/sec while maintaining the expanded state. Then, the sample was picked up by a Die bonder (trade name "Die bonder SPA-300", manufactured by Nissan corporation) at a pick-up height of 5 needles and 500 μm, and evaluated as "O" when the ratio of the number of the chips picked up was 90% or more and "X" when the ratio was less than 90%. The evaluation results are shown in the column "cuttability" in table 1.
The area of the portion of the die-bonding film lifted from the dicing tape in the undeveloped state (the proportion of the area of the semiconductor chip with the die-bonding film lifted when the entire area of the die-bonding film was taken as 100%) was observed with a microscope, and the portion lifted when the area was less than 30% was evaluated as "o", and the portion lifted when the area was 30% or more was evaluated as "x". The evaluation results are shown in the column "floating at cooling expansion" in table 1.
(levitation at Normal temperature expansion)
After the above-mentioned floating at the time of cooling expansion was evaluated, normal temperature expansion was carried out at room temperature under conditions of an expansion rate of 1 mm/sec and an expansion amount of 7mm by using a die-separating device (trade name "DDS 2300", manufactured by DISCO Corporation) using a heating expansion unit thereof. Then, the outer peripheral portion of the semiconductor chip was subjected to thermal contraction of the dicing tape at a heating temperature of 200 ℃, an air volume of 40L/min, a heating distance of 20mm, and a rotation speed of 5 °/sec while maintaining the expanded state. Then, the area of the portion of the die-bonding film floating from the dicing tape in this state (the ratio of the area of the semiconductor chip with the die-bonding film floating when the area of the entire die-bonding film was 100%) was observed with a microscope, and the portion with the floating area was evaluated as o when it was less than 30% and x when it was 30% or more. The evaluation results are shown in the column "floating at room temperature expansion" in table 1.
(time-lapse rising after room temperature expansion)
In the above evaluation at the time of normal temperature expansion, after the dicing tape was thermally contracted and 3 hours had elapsed, the area of the portion of the die-bonding film floating from the dicing tape (the ratio of the area of the semiconductor chip with the die-bonding film floating up when the area of the entire die-bonding film was 100%) was observed with a microscope, and when the floating area was less than 30%, the evaluation was "o", and when the floating area was 30% or more, the evaluation was "x". The evaluation results are shown in the column "float over time" in table 1.
(picking suitability)
After the evaluation of the floating at the room temperature expansion, 50 semiconductor chips each having a Die bond film were picked up with a jack-up speed of 1 mm/sec, a jack-up amount of 500 μm and a pin number of 5 under the trade name "Die binder SPA-300" ((manufactured by shinkanka corporation)). Then, 50 pieces of the sample were evaluated as "o", and 1 or more pieces of the sample were evaluated as "x" when the sample could not be picked up or floating occurred. The evaluation results are shown in the column of "pickup suitability" in table 1.
(suitability for chip bonding)
The chip was bonded to a 15mm × 15mm mirror chip (mirrorchip, ミラーチップ) at a stage temperature (stage temperature) of 120 ℃, a chip bonding load of 1000gf, and a chip bonding time of 1 second using a Die binder SPA-300 (manufactured by shinkanka corporation), and the lifting of the four corners of the chip was confirmed. The observation was carried out using an ultrasonic tomography apparatus (trade name: FS200II, manufactured by Hitachi ファインテック, Ltd.). The area occupied by the float in the observed image was calculated using binarization software (winrofof ver.5.6). When the area occupied by the voids was less than 5% of the surface area of the adhesive sheet, the sheet was judged as "good", and when the area occupied by the voids was 5% or more, the sheet was judged as "poor". The evaluation results are shown in the column "chip bonding suitability" in table 1.
(suitability for wire bonding)
The wafer with one surface evaporated with aluminum was ground to obtain a wafer for dicing having a thickness of 30 μm. The dicing wafers were attached to the dicing die-bonding films obtained in examples and comparative examples, and then diced into 10mm squares, thereby obtaining chips with die-bonding films. The chip with the die bonding film was die-mounted on a Cu lead frame at 120 ℃ under 0.1MPa for 1 sec. An Au wire having a wire diameter of 18 μm was bonded to 5 wires on one chip using a wire bonding apparatus (Maxum Plus manufactured by K & S Co.). Au wires were rolled into Cu leadframes at a power of 80Amp, time of 10ms and load of 50 g. The Au wire was rolled into the chip at 150 ℃, power 125Amp, time 10ms and load 80 g. When 1 or more of the 5 Au wires were not bonded to the chip, the chip was judged as x, and when all of the 5 Au wires were bonded to the chip, the chip was judged as o. The evaluation results are shown in the column "wire bonding suitability" in table 1.
(suitability for refluxing)
The die-bonding films obtained in examples and comparative examples were attached to a 9.5mm × 9.5mm, 200 μm thick semiconductor element at 70 ℃ and mounted on a lead frame under conditions of 120 ℃, 0.1MPa, and 1 second, and the die-bonding films were applied to a pressure drier at 175 ℃ for 1 hour (pressure of 7 kg/cm)2) And then a molding process using a sealing resin is performed. After the sample was passed through an IR reflow furnace set at a temperature of 260 ℃ or higher for 30 seconds by absorbing moisture at 85 ℃/60% RH X168 h, the interface between the chip and the substrate was observed for 9 chips using an ultrasonic tomography apparatus (manufactured by Hitachi ファインテック, FS200II) to determine the probability of peeling. 9 pieces were evaluated, and when none of the pieces was peeled off, it was determined as "O", and when 1 or more pieces were peeled off, it was determined as "X". The evaluation results are shown in the column "reflow suitability" in table 1.
(Table 1)
Claims (5)
1. A dicing die-bonding film comprising:
a dicing tape having a base material and an adhesive layer laminated on the base material; and
a die-bonding film containing an acrylic resin, a thermosetting resin and a filler, which is laminated on the adhesive layer in the dicing tape,
the chip bonding film has a storage modulus E' of 3-5 GPa at 25 ℃ measured under the condition of a frequency of 10Hz,
the filler is 30 to 70 mass% with respect to the total mass of the die bond film.
2. The dicing die-bonding film according to claim 1, wherein the die-bonding film has a storage modulus E' of 4 to 7GPa at-15 ℃ as measured at a frequency of 10 Hz.
3. The dicing die-bonding film according to claim 1 or 2, wherein the die-bonding film exhibits a storage modulus E 'at 150 ℃ measured under a condition of a frequency of 10Hz of 20 to 200MPa and a storage modulus E' at 250 ℃ measured under a condition of a frequency of 10Hz of 20 to 200MPa after heat curing.
4. The dicing die-bonding film according to claim 1 or 2, wherein the die-bonding film has a storage modulus G' at 130 ℃ of 0.03 to 0.7MPa as measured at a frequency of 1 Hz.
5. The dicing die-bonding film according to claim 1 or 2, wherein the loss modulus G "of the die-bonding film at 130 ℃ measured at a frequency of 1Hz is 0.01 to 0.1 MPa.
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| JP2017099518A JP6961387B2 (en) | 2017-05-19 | 2017-05-19 | Dicing die bond film |
| JP2017-099518 | 2017-05-19 |
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| WO2019107887A2 (en) | 2017-11-28 | 2019-06-06 | (주)다림티센 | Composition for hemostasis and container comprising same |
| JP2020150196A (en) * | 2019-03-15 | 2020-09-17 | 日東電工株式会社 | Dicing tape with adhesive film |
| JP7289688B2 (en) * | 2019-03-26 | 2023-06-12 | 日東電工株式会社 | Dicing tape with adhesive film |
| JPWO2020196757A1 (en) * | 2019-03-28 | 2020-10-01 | ||
| JP7328807B2 (en) * | 2019-06-26 | 2023-08-17 | 日東電工株式会社 | Dicing tape and dicing die bond film |
| JP7350534B2 (en) | 2019-06-28 | 2023-09-26 | 日東電工株式会社 | Dicing tape and dicing die bond film |
| CN112778924A (en) * | 2019-11-07 | 2021-05-11 | 日东电工株式会社 | Dicing tape and dicing die-bonding film |
| CN117397005A (en) * | 2021-05-28 | 2024-01-12 | 三井化学东赛璐株式会社 | Method for manufacturing electronic device |
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2018
- 2018-04-10 KR KR1020180041438A patent/KR102492072B1/en active IP Right Grant
- 2018-04-19 TW TW107113320A patent/TWI768030B/en active
- 2018-05-18 CN CN201810482239.5A patent/CN108949051B/en active Active
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Also Published As
| Publication number | Publication date |
|---|---|
| JP2022000933A (en) | 2022-01-04 |
| JP2018195746A (en) | 2018-12-06 |
| KR102492072B1 (en) | 2023-01-26 |
| TW201900797A (en) | 2019-01-01 |
| JP6961387B2 (en) | 2021-11-05 |
| CN108949051A (en) | 2018-12-07 |
| JP7208327B2 (en) | 2023-01-18 |
| KR20180127183A (en) | 2018-11-28 |
| TWI768030B (en) | 2022-06-21 |
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