CN105623580A - Adhesive sheet, adhesive sheet with dicing sheet, and method of manufacturing semiconductor device - Google Patents
Adhesive sheet, adhesive sheet with dicing sheet, and method of manufacturing semiconductor device Download PDFInfo
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- CN105623580A CN105623580A CN201510834272.6A CN201510834272A CN105623580A CN 105623580 A CN105623580 A CN 105623580A CN 201510834272 A CN201510834272 A CN 201510834272A CN 105623580 A CN105623580 A CN 105623580A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Adhesive Tapes (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Dicing (AREA)
- Die Bonding (AREA)
Abstract
The invention aims at providing a cracked adhesive sheet of a semiconductor device and an adhesive sheet with a dicing sheet. The adhesive sheet can be cured within short time and may reduce adverse bonding of copper wires and bonding pads. The invention provides the adhesive sheet. The adhesive sheet, by using a DSC measuring drawing curve in which temperature is increased from 25 to 175 degrees centigrade within 3 minutes and the 175 degrees centigrade is maintained for three hours, enables time from 175 degrees centigrade to the absence of a reaction peak to be less than 30 minutes, measures the viscoelasticity of a condensate by heating for 30 minutes at 175 degrees centigrade at 10Hz so as to cure the adhesive sheet, thereby obtaining stretching energy storage elasticity modulus over 100MPa. The adhesive sheet with the dicing sheet has a base material, a dicing sheet configured on the bonding agent layer of the base material, and a dicing sheet configured on the bonding agent.
Description
Technical field
The present invention relates to adhesive sheet, the manufacture method with the adhesive sheet of cutting blade and semiconductor device.
Background technology
Method about semiconductor device, for instance known have include: operation semiconductor chip adhesive sheet is fixed on the operation in the adherend such as lead frame, making adhesive sheet solidify and the method (referring for example to patent documentation 1) of the semiconductor device of the operation of wire bond.
In recent years, the transition from the wire bond to the wire bond using cheap copper cash using gold thread has been carried out. It addition, consider from the requirement of the miniaturization of semiconductor device, carry out the miniaturization of semiconductor chip.
Prior art literature
Patent documentation
Patent documentation 1: Japanese Unexamined Patent Publication 2013-53190 publication
Summary of the invention
Invent problem to be solved
Copper cash is due to easy oxidation, therefore, it is difficult to bonding with the pad of semiconductor chip, molten ball is hard. Thus, in the wire bond employing copper cash, semiconductor chip easily vibrates because of the ultrasound wave that sends from apparatus for wire bonding, it is easy to produce that copper cash is bad with the joint of pad, chip rupture. The small semiconductor chip little due to the area contacted with lead frame easily vibrates, and therefore especially easy generation engages bad, chip rupture.
It is an object of the invention to, solve described problem, it is provided that can solidify at short notice, can reduce that copper cash is bad with engaging of pad, the adhesive sheet broken of semiconductor chip, adhesive sheet with cutting blade. The present invention also aims to, it is provided that adhesive sheet can be made at short notice to solidify, can reduce that copper cash is bad with engaging of pad, the manufacture method of the semiconductor device broken of semiconductor chip.
For the method solving problem
The present invention relates to adhesive sheet used in the manufacture of semiconductor device. The adhesive sheet of the present invention possesses following character. That is, utilize be warmed up to 175 DEG C from 25 DEG C with 3 minutes, then 175 DEG C are maintained 3 hours DSC measure in the DSC curve described, from arriving 175 DEG C of times disappeared to reaction peak less than 30 minutes. Owing to the times disappeared to reaction peak from arrival 175 DEG C were less than 30 minutes, therefore can at short notice so as to solidify. The adhesive sheet of the present invention is also equipped with following character. That is, being measured by the viscoelasticity of the solidfied material that solidification obtains 175 DEG C of heating 30 minutes under 10Hz, the stretching store elastic modulus of 200 DEG C thus obtained is more than 100MPa. Owing to the stretching store elastic modulus of 200 DEG C are more than 100MPa, therefore can reduce the vibration of semiconductor chip, such that it is able to reduce that copper cash is bad with engaging of pad, the breaking of semiconductor chip.
The adhesive sheet of the present invention is preferably also equipped with following character. That is, utilize DSC when heating up with 10 DEG C per minute in the scope of 25 DEG C��300 DEG C to measure the reaction heat obtained and be preferably more than 80mJ/mg.
The adhesive sheet of the present invention is preferably also equipped with following character. That is, it is preferably more than 150 DEG C by the Tg of the solidfied material that solidification obtains 175 DEG C of heating 30 minutes.
It is 4m that the adhesive sheet of the present invention preferably comprises BET specific surface area2The silica filler of/more than g. The content of silica filler is preferably more than 50 weight %.
The adhesive sheet of the present invention contains resinous principle. Preferred resin composition contains epoxy resin, phenolic resin and acrylic resin. More preferably the content of the acrylic resin in resinous principle 100 weight % is below 14 weight %. The hydroxyl equivalent of phenolic resin is preferably below 120g/eq..
The invention still further relates to a kind of adhesive sheet with cutting blade, it cutting blade including possessing base material and the adhesive phase that is configured on base material and the adhesive sheet being configured on adhesive phase.
The invention still further relates to the manufacture method of a kind of semiconductor device, comprising: prepare the operation of the adhesive sheet with cutting blade; Adhesive sheet crimps the operation of semiconductor wafer; By cutting the semiconductor wafer being configured in adhesive sheet, and form the operation of the chip joint chip of the semiconductor chip including possessing pad and the adhesive film being configured on semiconductor chip; The operation of the adherend with chip is formed by crimping chip joint chip in the adherend possess portion of terminal; By heating the operation making adhesive film solidify with the adherend of chip; The operation of the step including engaging one end of the metal wire containing copper with pad carried out after the operation making adhesive film solidify and the step that the other end of metal wire is engaged with portion of terminal.
Accompanying drawing explanation
Fig. 1 is the constructed profile of adhesive sheet.
Fig. 2 is the constructed profile of the adhesive sheet with cutting blade.
Fig. 3 is the constructed profile of the adhesive sheet with cutting blade of variation.
Fig. 4 indicates that the profile of the outline of the appearance being configured with semiconductor wafer in the adhesive sheet with cutting blade.
Fig. 5 indicates that the profile of the outline of the appearance by semiconductor wafer singualtion.
Fig. 6 is the constructed profile of the adherend with semiconductor chip.
Fig. 7 is the constructed profile of semiconductor device.
Fig. 8 is the DSC curve of embodiment 2.
Detailed description of the invention
Hereinafter enumerating embodiment, the present invention is described in detail, but the present invention is not limited to these embodiments.
[embodiment 1]
(adhesive sheet 3)
As it is shown in figure 1, the form of adhesive sheet 3 is lamellar. Adhesive sheet 3 possesses thermosetting.
Adhesive sheet 3 is also equipped with following character. That is, utilize be warmed up to 175 DEG C from 25 DEG C with 3 minutes, then 175 DEG C are maintained 3 hours DSC measure in the DSC curve described, from arriving 175 DEG C of times disappeared to reaction peak less than 30 minutes. Owing to the times disappeared to reaction peak from arrival 175 DEG C were less than 30 minutes, therefore can at short notice so as to solidify. Furthermore it is possible to when the wire bond of standard so as to fully or substantially fully solidify, such that it is able to reduce the vibration of semiconductor chip. It is preferably less than 25 minutes from arriving 175 DEG C of times disappeared to reaction peak. On the other hand, it it is such as 5 minutes, 10 minutes, 15 minutes etc. from arriving 175 DEG C of lower limits of times disappeared to reaction peak.
So-called " reaction peak disappears ", refers to that in the way of making test sample equal with the temperature of reference sample the difference of the input of the heat energy of time per unit to both applyings is certain.
From arrive 175 DEG C to reaction peak disappear times can utilize the kind of curing accelerator, the content of curing accelerator, resin kind etc. control.
Adhesive sheet 3 is preferably also equipped with following character. That is, utilize DSC when heating up with 10 DEG C per minute in the scope of 25 DEG C��300 DEG C to measure the reaction heat obtained and be preferably more than 80mJ/mg, more preferably more than 85mJ/mg. On the other hand, reaction heat is preferably below 300mJ/mg, more preferably below 200mJ/mg.
So-called " reaction heat ", is the value by the heat determined of DSC when heating up with 10 DEG C per minute in the scope of 25 DEG C��300 DEG C being utilized to calculate divided by the weight of test film.
It is more than 100MPa by measuring the stretching store elastic modulus of the viscoelasticity of solidfied material making adhesive sheet 3 solidify and to obtain obtained 200 DEG C under 10Hz, it is preferred to more than 200MPa. Owing to for more than 100MPa, the vibration of semiconductor chip therefore can be reduced, such that it is able to reduce that copper cash is bad with engaging of pad, the breaking of semiconductor chip. The stretching store elastic modulus of 200 DEG C is preferably below 1000MPa, more preferably below 700MPa. As the upper limit stretching store elastic modulus of 200 DEG C, for instance 500MPa, 400MPa etc. can also be exemplified.
And, solidfied material is by adhesive sheet 3 being heated 30 minutes so as to solidify and the material that obtains at 175 DEG C.
200 DEG C of solidfied material stretch store elastic modulus can utilize the hydroxyl equivalent of phenolic resin, the content of silica filler, silica filler particle diameter etc. control. Such as, by using the little phenolic resin of hydroxyl equivalent, increase the content of silica filler, using the silica filler that particle diameter is little, it is possible to improve the stretching store elastic modulus of 200 DEG C.
The Tg of solidfied material is preferably more than 150 DEG C, more preferably more than 180 DEG C. If being more than 150 DEG C, then easily the stretching store elastic modulus of the 200 of solidfied material DEG C is set as more than 100MPa. On the other hand, the Tg of solidfied material is preferably less than 250 DEG C, more preferably less than 220 DEG C.
The Tg (" glass transition temperature ") of solidfied material can utilize the hydroxyl equivalent etc. of phenolic resin to control.
Adhesive sheet 3 is containing resinous principle. As resinous principle, it is possible to enumerate acrylic resin, epoxy resin, phenolic resin etc.
As acrylic resin, it is not particularly limited, it is possible to enumerate the one kind or two or more polymer as composition (acrylic copolymer) etc. of the sour ester of the acrylic or methacrylic to have carbon number less than 30, the particularly alkyl of the straight or branched of carbon number 4��18. As described alkyl, for instance methyl, ethyl, propyl group, isopropyl, normal-butyl, the tert-butyl group, isobutyl group, amyl group, isopentyl, hexyl, heptyl, cyclohexyl, 2-ethylhexyl, octyl group, iso-octyl, nonyl, different nonyl, decyl, isodecyl, undecyl, lauryl, tridecyl, myristyl, stearyl, octadecyl or dodecyl etc. can be enumerated.
It addition, as other monomers forming polymer (acrylic copolymer), it does not have it is particularly limited to, for instance acrylic acid can be enumerated, methacrylic acid, carboxyethyl acrylates, acrylic acid carboxyl pentyl ester, itaconic acid, maleic acid, the various monomer containing carboxyl such as fumaric acid or .beta.-methylacrylic acid, the various anhydride monomers such as maleic anhydride or itaconic anhydride, (methyl) acrylic acid 2-hydroxy methacrylate, (methyl) acrylic acid 2-hydroxy propyl ester, (methyl) acrylic acid 4-hydroxybutyl, (methyl) acrylic acid own ester of 6-hydroxyl, (methyl) acrylic acid 8-hydroxyl monooctyl ester, (methyl) acrylic acid 10-hydroxyl ester in the last of the ten Heavenly stems, the various monomers containing hydroxyl such as (methyl) acrylic acid 12-hydroxylauric ester or (4-Hydroxymethyl-cyclo-hexyl)-methacrylate, styrene sulfonic acid, allyl sulphonic acid, 2-(methyl) acrylamide-2-methyl propane sulfonic, (methyl) acrylamide propane sulfonic acid, sulfapropyl (methyl) acrylate or (methyl) propane sulfonic acid etc. are various containing sulfonic monomer, or the various monomers containing phosphate such as 2-hydroxyethyl acryloyl phosphate.
In the middle of acrylic resin, it is preferable that weight average molecular weight is the resin of more than 100,000, more preferably the resin of 300,000��3,000,000, it is preferred that the resin of 500,000��2,000,000. This is because, if in this numerical range, then cementability and excellent heat resistance. And, weight average molecular weight is to utilize GPC (gel permeation chromatography) value measuring and calculating with polystyrene conversion.
Acrylic resin preferably comprises can with the functional group of epoxy reaction. Thus, so that it may so that acrylic resin and cross linking of epoxy resin.
As can with the functional group of epoxy reaction, for instance carboxyl, hydroxyl etc. can be enumerated. Wherein, due to the reason high with the reactivity of epoxy radicals, it is thus preferred to carboxyl.
The acid number of acrylic resin is preferably more than 5mgKOH/g, more preferably more than 10mgKOH/g. On the other hand, the acid number of acrylic resin is preferably below 40mgKOH/g, more preferably below 25mgKOH/g.
And, acid number can utilize the neutralization titration of regulation in JISK0070-1992 to measure.
The content of the acrylic resin in resinous principle 100 weight % is preferably below 14 weight %, more preferably below 12 weight %, more preferably below 11 weight %. If below 14 weight %, then can improve the stretching store elastic modulus of 200 DEG C. The content of the acrylic resin in resinous principle 100 weight % is preferably more than 5 weight %, more preferably more than 7 weight %.
It is not particularly limited as epoxy resin, for instance difunctional epoxy resin or the epoxy resin such as polyfunctional epoxy resin or hydantoin type, triglycidyl group isocyanurate type or glycidyl amine type such as bisphenol A-type, bisphenol-f type, bisphenol S type, bmminated bisphenol-A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorenes type, novolac type, orthoresol novolac type, trihydroxy benzene methylmethane type, four hydroxy phenyl ethane types can be used. The particularly preferably novolac type epoxy resin in these epoxy resin, biphenyl type epoxy resin, trihydroxy benzene methylmethane type resin or four hydroxy phenyl ethane type epoxy resin. This is because, these epoxy resin are imbued with and the excellences such as the reactivity of the phenolic resin as firming agent, thermostability.
The epoxide equivalent of epoxy resin is preferably more than 120g/eq., more preferably more than 140g/eq., more preferably more than 150g/eq.. On the other hand, the epoxide equivalent of epoxy resin is preferably below 250g/eq., more preferably below 200g/eq..
And, the epoxide equivalent of epoxy resin can utilize the method for regulation in JISK7236-2009 to measure.
Phenolic resin is the material that the firming agent as epoxy resin plays a role, for instance can enumerate the novolac type phenolic resin such as phenol linear phenolic resin, phenol aralkyl resin, cresol novalac resin, tert-butyl phenol linear phenolic resin, nonyl phenol linear phenolic resin, first rank novolac type phenolic resin, gather polyoxy styrene etc. such as oxygen base styrene. In these phenolic resin particularly preferably phenol linear phenolic resin, phenol aralkyl resin. This is because, it is possible to improve the connection reliability of semiconductor device.
The hydroxyl equivalent of phenolic resin is preferably below 120g/eq., more preferably below 110g/eq.. If below 120g/eq., then can improve crosslink density, it is possible to improve the stretching store elastic modulus of 200 DEG C. On the other hand, the hydroxyl equivalent of phenolic resin is preferably more than 80g/eq., more preferably more than 90g/eq..
Mixing ratio for epoxy resin Yu phenolic resin, for instance be suitably for and make the mode that the hydroxyl in phenolic resin is 0.5��2.0 equivalent coordinate in the every 1 equivalent epoxy radicals in epoxy resin ingredient. Being more suitable for is 0.8��1.2 equivalent. Namely because if both mixing ratios depart from this scope, then can not carry out sufficient curing reaction, the characteristic of solidfied material easily deteriorates.
Epoxy resin and the total content of phenolic resin in resinous principle 100 weight % are preferably more than 86 weight %, more preferably more than 88 weight %, more preferably more than 89 weight %. If more than 86 weight %, then can improve the stretching store elastic modulus of 200 DEG C. On the other hand, the total content of epoxy resin and phenolic resin is preferably below 95 weight %, more preferably below 93 weight %.
It is 4m that adhesive sheet 3 preferably comprises BET specific surface area2The silica filler of/more than g.
The BET specific surface area of silica filler is preferably 15m2/ more than g. On the other hand, the BET specific surface area of silica filler is preferably 100m2/ below g, more preferably 50m2/ below g.
BET specific surface area utilizes BET absorption method (multipoint method) to measure. Specifically, by adhesive sheet 3 under air atmosphere 700 DEG C of heat-flashes 2 hours so as to ashing. By the ash of gained after 110 DEG C of vacuum outgass carrying out more than 6 hours, use Quantachrome system 4 even formula specific surface area pore-size distribution determinator " NOVA-4200e type ", in nitrogen, be measured at the temperature of 77.35K.
The new mohs hardness of silica filler is preferably more than 4. If more than 4, then can improve the stretching store elastic modulus of 200 DEG C efficiently. The upper limit of the new mohs hardness of silica filler is not particularly limited, but is such as 10.
The content of the silica filler in adhesive sheet 3 is preferably more than 50 weight %, more preferably more than 51 weight %. If more than 50 weight %, then can improve the stretching store elastic modulus of 200 DEG C. On the other hand, the content of silica filler is preferably below 70 weight %, more preferably below 65 weight %.
Adhesive sheet 3 preferably comprises curing accelerator. The content of curing accelerator is preferably 0.1��5 weight portion relative to resinous principle 100 weight portion, more preferably 0.1��3 weight portion. If more than 0.1 weight portion, then can at short notice so as to solidify.
It is not particularly limited as curing accelerator, for instance imidazole compound, triphenylphosphine based compound, amine compound, triphenylborane based compound, three haloboranes based compounds etc. can be enumerated.
As imidazole compound, it is possible to enumerate 2-methylimidazole (trade name: 2MZ), 2-undecyl imidazole (trade name: C11Z), 2-heptadecyl imidazole (trade name: C17Z), 1,2-methylimidazole (trade name: 1.2DMZ), 2-ethyl-4-methylimidazole (trade name: 2E4MZ), 2-phenylimidazole (trade name: 2PZ), 2-phenyl-4-methylimidazole (trade name: 2P4MZ), 1 benzyl 2 methyl imidazole (trade name: 1B2MZ), 1-benzyl-2-phenylimidazole (trade name: 1B2PZ), 1-cyano ethyl-2-methylimidazole (trade name: 2MZ-CN), 1-cyano ethyl-2-undecyl imidazole (trade name: C11Z-CN), 1-cyano ethyl-2-phenylimidazole trimellitate (trade name: 2PZCNS-PW), 2,4-diaminourea-6-[2 '-methylimidazolyl-(1 ')]-ethyl s-triazine (trade name: 2MZ-A), 2,4-diaminourea-6-[2 '-undecyl imidazole base-(1 ')]-ethyl s-triazine (trade name: C11Z-A), 2,4-diaminourea-6-[2 '-ethyl-4 '-methylimidazolyl-(1 ')]-ethyl s-triazine (trade name: 2E4MZ-A), 2,4-diaminourea-6-[2 '-methylimidazolyl-(1 ')]-ethyl s-triazine isocyanuric acid adduct (trade name: 2MA-OK), 2-phenyl-4,5-bishydroxymethyl imidazoles (trade name: 2PHZ-PW), 2-phenyl-4-methyl-5-hydroxymethylimidazole (trade name: 2P4MHZ-PW) etc. (Dou Shi four countries chemical conversion (strain) system).
It is not particularly limited as triphenylphosphine based compound, for instance (Dou Shibeixing chemical company systems) such as triphenylphosphine, tributylphosphine, three (p-methylphenyl) phosphine, three (nonyl phenyl) phosphine, diphenylmethyl Phenylphosphine etc. three organic group phosphine, tetraphenylphosphonibromide bromide (trade name: TPP-PB), methyl triphenyl (trade name: TPP-MB), methyl triphenyl chlorination (trade name: TPP-MC), methoxymethyl triphenylphosphonium (trade name: TPP-MOC), benzyl triphenyl phosphonium chlorides (trade name: TPP-ZC) can be enumerated.
It is not particularly limited as triphenylborane based compound, for instance three (p-methylphenyl) phosphine etc. can be enumerated. It addition, as triphenylborane based compound, it is also possible to also include the compound with triphenylphosphine structure. It is not particularly limited as the compound with triphenylphosphine structure and triphenyl borine alkyl structure, for instance tetraphenyl tetraphenyl borate salts (trade name: TPP-K), tetraphenyl four-to (Dou Shibeixing chemical company systems) such as three borates (trade name: TPP-MK), benzyltriphenyl phosphonium tetraphenyl borate salts (trade name: TPP-ZK), triphenylphosphine triphenylborane (trade name: TPP-S) can be enumerated.
It is not particularly limited as amino based compound, for instance monoethanolamine trifluoroborate (Stella-Chemifa (strain) system), dicyandiamide (NacalaiTesque (strain) system) etc. can be enumerated.
It is not particularly limited as three haloboranes based compounds, for instance three chloroboranes etc. can be enumerated.
Adhesive sheet 3 beyond described composition, also can also suitably contain the compounding ingredient commonly used in film manufacture, for instance cross-linking agent etc.
Adhesive sheet 3 can utilize usual way manufacture. For example, it is possible to make containing the adhesive composite solution of described each composition, after adhesive composite solution being coated in the way of reaching specific thickness base material barrier film forms coated film, make coated film dry, thus manufacture adhesive sheet 3.
It is not particularly limited as solvent used in adhesive composite solution, but preferably described each composition can be dissolved equably, mix or scattered organic solvent. Such as can enumerate ketone series solvent, toluene, the dimethylbenzene etc. such as dimethylformamide, dimethyl acetylamide, N-Methyl pyrrolidone, acetone, butanone, Ketohexamethylene. Coating process is not particularly limited. Method as solvent application, for instance die coating machine, gravure coater, roll coater, reverse coating machine, comma coating machine, pipe-line scraper coating machine, silk screen printing etc. can be enumerated. Wherein, high from the viewpoint of the uniformity of coating thickness, it is preferable that die coating machine.
As base material barrier film, it is possible to use polyethylene terephthalate (PET), polyethylene, polypropylene or utilize the remover such as fluorine series stripping agent, chain alkyl acrylate series stripping agent to carry out plastic foil or the paper etc. of surface coating. Coating process as adhesive composite solution, it is possible to enumerate such as rolling method, silk screen rubbing method, gravure coating process etc. It addition, the drying condition of coated film is not particularly limited, for instance can 70��160 DEG C baking temperature, to carry out the drying time of 1��5 minute.
Manufacture method as adhesive sheet 3, for instance also be adapted for as described each components utilising agitator is mixed, by compressing for the mixture of gained and manufacture the method etc. of adhesive sheet 3. As agitator, it is possible to enumerate planet strrier etc.
The thickness of adhesive sheet 3 is not particularly limited, but is preferably more than 5 ��m, more preferably more than 15 ��m. If less than 5 ��m, then can occur the semiconductor wafer of warpage, produce the position not bonding with semiconductor chip, have the situation that bond area becomes unstable. It addition, the thickness of adhesive sheet 3 is preferably less than 100 ��m, more preferably less than 50 ��m. If greater than 100 ��m, then adhesive sheet 3 can be made exceedingly to stretch out because of the load of die bonding, thus having the situation polluting pad.
Adhesive sheet 3 is used in the manufacture of semiconductor device. Specifically, it is reserved as film (hereinafter referred to as " die bonding film ") use bonding with semiconductor chip for the adherend such as lead frame. As adherend, it is possible to enumerate lead frame, built-in inserted plate, semiconductor chip etc.
Adhesive sheet 3 preferably uses with the form of the adhesive sheet with cutting blade.
(adhesive sheet 10 with cutting blade)
Adhesive sheet 10 with cutting blade is illustrated.
As in figure 2 it is shown, the adhesive sheet 10 with cutting blade possesses cutting blade 1 and the adhesive sheet 3 being configured on cutting blade 1. Cutting blade 1 possesses base material 11 and the adhesive phase 12 being configured on base material 11. Adhesive sheet 3 is configured on adhesive phase 12.
As it is shown on figure 3, the adhesive sheet 10 with cutting blade can also be only attach, at workpiece (semiconductor wafer 4 etc.), the composition being formed in part with adhesive sheet 3.
Base material 11 is the component of the intensity parent becoming the adhesive sheet 10 with cutting blade, it is preferable that have the material of ultraviolet permeability. as base material 11, such as can enumerate Low Density Polyethylene, straight-chain polyethylene, medium density polyethylene, high density polyethylene (HDPE), ultra-low density polyethylene, atactic copolymerized polypropene, block copolymerization polypropylene, homo-polypropylene, polybutene, the polyolefin such as polymethylpentene, vinyl-vinyl acetate copolymer, ionomer resin, ethylene-(methyl) acrylic copolymer, ethylene-(methyl) acrylate is (random, alternately) copolymer, ethylene-butene copolymer, ethylene-hexene co-polymers, polyurethane, polyethylene terephthalate, the polyester such as PEN, Merlon, polyimides, polyether-ether-ketone, polyimides, Polyetherimide, polyamide, fully aromatic polyamide, polyphenylene sulfide, aramid fiber (paper), glass, glass cloth, fluororesin, polrvinyl chloride, polyvinylidene chloride, cellulose-based resin, silicone resin, metal (paper tinsel), paper etc.
Surface for base material 11, in order to improve and the adaptation of adjacent layer, retentivity etc., usual surface treatment can be implemented, for instance the process chemically or physically such as chromic acid process, ozone exposure, fire exposure, high-voltage electric shock exposure, ionizing irradiation line process, coating by silane coupling agent (such as adhesion substance described later) process.
The thickness of base material 11 is not particularly limited, it is possible to suitably determine, but is generally about 5��200 ��m.
It is not particularly limited as binding agent used in the formation of adhesive phase 12, for instance the pressure-sensitive bonding agent that acrylic adhesive, elastomeric adhesive etc. are general can be used. As pressure-sensitive bonding agent, fear the cleaning cleaning etc. by the organic solvent such as ultra-pure water or alcohol of the electronic unit polluted from the viewpoint of semiconductor wafer or glass etc., it is preferable that by the acrylic adhesive of polymer based on acrylic acid series polymeric compounds.
As acrylic acid series polymeric compounds, such as can enumerate (methyl) alkyl acrylate (such as methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, second butyl ester, the tert-butyl ester, pentyl ester, isopentyl ester, own ester, heptyl ester, monooctyl ester, 2-Octyl Nitrite, different monooctyl ester, the ninth of the ten Heavenly Stems ester, the last of the ten Heavenly stems ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, myristyl ester, cetyl ester, stearyl, the carbon number of the alkyl such as eicosyl ester is 1��30, particularly carbon number is straight-chain or the Arrcostab etc. of branched of 4��18) and (methyl) acrylate base ester (such as cyclopentyl ester, cyclohexyl ester etc.) one kind or two or more as monomer component use acrylic acid series polymeric compounds etc. and, so-called (methyl) acrylate, refer to acrylate and/or methacrylate, the what is called (methyl) of the present invention is all the identical meaning.
The purpose that acrylic acid series polymeric compounds can also modifiy for cohesiveness, thermostability etc., as required, containing corresponding to and the unit of described (methyl) alkyl acrylate or other monomer components of cycloalkyl ester copolymerization. as this kind of monomer component, for instance acrylic acid can be enumerated, methacrylic acid, (methyl) carboxyethyl acrylates, (methyl) acrylic acid carboxyl pentyl ester, itaconic acid, maleic acid, fumaric acid, the monomer containing carboxyl such as .beta.-methylacrylic acid: maleic anhydride, the anhydride monomers such as itaconic anhydride: (methyl) acrylic acid 2-hydroxy methacrylate, (methyl) acrylic acid 2-hydroxy propyl ester, (methyl) acrylic acid 4-hydroxybutyl, (methyl) acrylic acid own ester of 6-hydroxyl, (methyl) acrylic acid 8-hydroxyl monooctyl ester, (methyl) acrylic acid 10-hydroxyl ester in the last of the ten Heavenly stems, (methyl) acrylic acid 12-hydroxylauric ester, the monomer containing hydroxyl such as (4-Hydroxymethyl-cyclo-hexyl) methyl (methyl) acrylate: styrene sulfonic acid, allyl sulphonic acid, 2-(methyl) acrylamide-2-methyl propane sulfonic, (methyl) acrylamide propane sulfonic acid, sulfapropyl (methyl) acrylate, (methyl) propane sulfonic acid etc. contain sulfonic monomer: the monomer containing phosphate such as 2-hydroxyethyl acryloyl phosphate: acrylamide, acrylonitrile etc. these can the monomer component of copolymerization can use one kind or two or more. these consumption that makes of monomer of copolymerization can be preferably below the 40 weight % of whole monomer component.
Additionally, in order to make acrylic acid series polymeric compounds cross-link, it is also possible to contain multi-functional monomer etc. as desired as comonomer composition. as this kind of multi-functional monomer, such as can enumerate hexanediol two (methyl) acrylate, (gathering) ethylene glycol bisthioglycolate (methyl) acrylate, (gathering) propylene glycol two (methyl) acrylate, neopentyl glycol two (methyl) acrylate, tetramethylolmethane two (methyl) acrylate, trimethylolpropane tris (methyl) acrylate, tetramethylolmethane three (methyl) acrylate, dipentaerythritol six (methyl) acrylate, epoxy (methyl) acrylate, polyester (methyl) acrylate, carbamate (methyl) acrylate etc. these multi-functional monomers can also use one kind or two or more. consumption is made for multi-functional monomer, from the viewpoint of adhesion characteristic etc., it is preferred to all below 30 weight % of monomer components.
Acrylic acid series polymeric compounds can by being polymerized single monomer or monomer mixture of more than two kinds and obtain. Polymerization can utilize the arbitrary mode such as polymerisation in solution, emulsion polymerization, polymerisation in bulk, suspension polymerisation to carry out. From the viewpoint of the pollution etc. of adherend prevented cleaning, it is preferable that the acrylic acid series polymeric compounds that the content of low molecular weight substance is little. Considering from this point, the number-average molecular weight of acrylic acid series polymeric compounds is preferably more than 300,000, more preferably 400,000��about 3,000,000.
It addition, in described binding agent, for the number-average molecular weight of the acrylic acid series polymeric compounds etc. of polymer based on improving, it is also possible to suitably adopt external crosslinker. Concrete grammar as outside cross-linking method, it is possible to enumerate all of cross-linking agent such as adding polyisocyanate compounds, epoxide, aziridine cpd, melamine series cross-linking agent so as to the method for reaction. When use external crosslinker, its make consumption can according to the balance with the base polymer that should cross-link, additionally, suitably determine always according to the use as binding agent. It is said that in general, relative to described base polymer 100 weight portion, it is preferable that coordinate below about 5 weight portions, more preferably coordinate 0.1��5 weight portion. Additionally, in binding agent, as required, beyond described composition, it is possible to use the additives such as known various viscosifier, antiaging agent.
Adhesive phase 12 can utilize radiation curable binding agent to be formed. Radiation curable binding agent can utilize the irradiation of ultraviolet israds to make the degree of cross linking increase and make its bonding force easily reduce.
By only the part 12a attaching part corresponding with workpiece of the adhesive phase 12 shown in Fig. 2 being carried out irradiation with radiation, it is possible to the difference of the bonding force of setting and other part 12b. In this situation, uncured radiation curable binding agent the described part 12b formed and adhesive sheet 3 bond, it can be ensured that retentivity during cutting.
It addition, by making the adhesive phase 12 of radiation curable solidify alignedly with the adhesive sheet 3 shown in Fig. 3, it is possible to form the described part 12a that bonding force substantially reduces. In this situation, it is possible to wafer ring is fixed on the described part 12b formed by uncured radiation curable binding agent.
Namely, when utilizing radiation curable binding agent to form adhesive phase 12, it is preferable that in the way of making the bonding force of bonding force other part 12b of < of the described part 12a in adhesive phase 12, described part 12a is carried out irradiation with radiation.
Radiation curable binding agent can use the functional group with carbon-to-carbon double bond israds curable without particular limitation and demonstrate fusible binding agent. As radiation curable binding agent, for instance the radiation curable binding agent of the addition type being combined with the monomer component of radiation curing, oligomer composition in the general pressure-sensitive adhesives such as described acrylic adhesive, elastomeric adhesive can be exemplified.
Monomer component as radiation curing joined together, such as can enumerate oligourethane, carbamate (methyl) acrylate, trimethylolpropane tris (methyl) acrylate, tetramethylol methane four (methyl) acrylate, tetramethylolmethane three (methyl) acrylate, tetramethylolmethane four (methyl) acrylate, dipentaerythritol monohydroxy five (methyl) acrylate, dipentaerythritol six (methyl) acrylate, BDO two (methyl) acrylate etc. It addition, the oligomer composition of radiation curing can enumerate the various oligomer such as carbamate system, polyethers system, Polyester, polycarbonate-based, polybutadiene system, its molecular weight is suitably for the scope of about 100��30000. The monomer component of radiation curing, oligomer composition use level can suitably determine to reduce the amount of the bonding force of adhesive phase according to the kind of described adhesive phase. It is said that in general, relative to base polymer 100 weight portion of the acrylic acid series polymeric compounds etc. constituting binding agent, for instance it is 5��500 weight portions, it is preferred to about 40��150 weight portions.
Additionally, as radiation curable binding agent, except the radiation curable binding agent of the addition type of described explanation, it is also possible to polymer based on enumerating employs in polymer lateral chain or main chain or main chain terminal has in the polymer of carbon-to-carbon double bond the radiation curable binding agent in type. The radiation curable binding agent of inherent type need not contain the oligomer composition etc. as low molecular composition, or do not contain in a large number, therefore oligomer composition etc. will not elapse in time and move in binding agent, it is possible to form the adhesive phase of stable Rotating fields, thus preferably.
The described base polymer with carbon-to-carbon double bond can use without particular limitation to be had carbon-to-carbon double bond and has fusible polymer. As this kind of base polymer, it is preferable that using acrylic acid series polymeric compounds as the polymer of basic framework. Basic framework as acrylic acid series polymeric compounds, it is possible to enumerate the described acrylic acid series polymeric compounds illustrated.
Carbon-to-carbon double bond is not particularly limited to the introductory technique in described acrylic acid series polymeric compounds, it is possible to adopts various method, but imports carbon-to-carbon double bond in polymer lateral chain and easily carry out MOLECULE DESIGN. For example, it is possible to enumerate in advance by after acrylic acid series polymeric compounds has the monomer copolymerization of functional group, make that there is the method that can carry out condensation or additive reaction while maintaining the radiation curing of carbon-to-carbon double bond with the compound of the functional group of this functional group reactions and carbon-to-carbon double bond.
Example as the combination of these functional groups, it is possible to enumerate carboxylic acid group and epoxy radicals, carboxylic acid group and '-aziridino, hydroxyl and NCO etc. Consider from the easness of reactive tracing in the middle of the combination of these functional groups, be suitably for the combination of hydroxyl and NCO. Additionally, utilize the combination of these functional groups, if having the combination of the acrylic acid series polymeric compounds of carbon-to-carbon double bond described in generating, then functional group may be at any side of acrylic acid series polymeric compounds and described compound, but in described preferred combination, be suitably for acrylic acid series polymeric compounds and have hydroxyl, described compound has the situation of NCO. In this situation, as the isocyanate compound with carbon-to-carbon double bond, for instance methacryloyl isocyanate, 2-methacryloxyethyl isocyanates, an isopropenyl-alpha, alpha-dimethylbenzyl isocyanates etc. can be enumerated. It addition, as acrylic acid series polymeric compounds, use the polymer monomer containing hydroxyl of described illustration or 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, the copolymerization such as ether based compound of diethylene glycol monovinyl base ether obtained.
The radiation curable binding agent of described inherent type has the base polymer (particularly acrylic acid series polymeric compounds) of carbon-to-carbon double bond described in can using individually, but can also not make the degree of characteristic degradation coordinate the monomer component of described radiation curing, oligomer composition. The oligomer composition etc. of radiation curing is commonly angled relative in the scope that base polymer 100 weight portion is 30 weight portions, it is preferred to the scope of 0��10 weight portion.
In described radiation curable binding agent, when utilizing ultraviolet etc. so as to containing Photoepolymerizationinitiater initiater when solidifying. as Photoepolymerizationinitiater initiater, for instance 4-(2-hydroxyl-oxethyl) phenyl (2-hydroxyl-2-propyl group) ketone can be enumerated, Alpha-hydroxy-��, �� '-dimethyl acetophenone, 2-methyl-2-hydroxypropiophenonepreparation, ��-ketal the based compounds such as 1-hydroxycyclohexylphenylketone: methoxyacetophenone, 2,2-dimethoxy-2-phenyl acetophenone, 2,2-diethoxy acetophenones, the 1-Phenylethanone. based compounds such as 2-methyl isophthalic acid-[4-(methyl mercapto)-phenyl]-2-morpholino propane-1-ketone: benzoin ethyl ether, benzoin iso-propylether, the benzoin ether based compounds such as anisoin methyl ether: the ketal based compounds such as benzil dimethyl ketal: the aromatic sulfonyl based compounds such as 2-naphthalene sulfonyl chloride: 1-benzene-1, the photolytic activity oxime compound such as 1-propanedione-2-(adjacent ethoxy carbonyl) oxime: benzophenone, benzoylbenzoic acid, 3, the benzophenone based compound such as 3 '-dimethyl-4-methoxy benzophenone: thiaxanthone, CTX, 2-methyl thiaxanthone, 2,4-dimethyl thioxanthone, isopropyl thioxanthone, 2,4-bis-clopenthixal ketones, 2,4-diethyl thioxanthones, the thiaxanthone based compounds such as 2,4-diisopropylthioxanthone: camphorquinone: halogenation ketone: acylphosphine oxide: acyl phosphonate etc. the use level of Photoepolymerizationinitiater initiater is such as about 0.05��20 weight portion relative to constituting base polymer 100 weight portion such as acrylic acid series polymeric compounds of binding agent.
Additionally, as radiation curable binding agent, for instance polyaddition compound disclosed in Japanese Laid-Open Patent Publication 60-196956 publication, containing the unsaturated bond with more than 2, the elastomeric adhesive with the Photoepolymerizationinitiater initiater such as photopolymerizable compound and carbonyl compound, organosulfur compound, peroxide, amine, salt based compound such as alkoxy silane of epoxy radicals or acrylic adhesive etc. can be enumerated.
In the adhesive phase 12 of described radiation curable, as required, it is also possible to containing utilizing irradiation with radiation and painted compound. By making in adhesive phase 12 containing utilizing irradiation with radiation and painted compound, it is possible to only to being undertaken painted by the part of irradiation with radiation. Utilize irradiation with radiation and painted compound be before irradiation with radiation for colourless or light color, become coloured compound because of irradiation with radiation, for instance leuco dye etc. can be enumerated. Utilize irradiation with radiation and the usage ratio of painted compound can suitably set.
The thickness of adhesive phase 12 is not particularly limited, however from the viewpoint of take into account prevent chip cutting face breach, keep the fixing etc. of adhesive sheet 3, it is preferred to about 1��50 ��m. It is preferably 2��30 ��m, more preferably 5��25 ��m.
Adhesive sheet 10 with cutting blade is preferably protected (not shown) by barrier film. Namely, it is preferable that in adhesive sheet 3, be configured with barrier film. Barrier film has as the function of the protection material of protection adhesive sheet 3 before actually used. Barrier film is stripped when attaching workpiece in adhesive sheet 3. As barrier film, it is possible to use polyethylene terephthalate (PET), polyethylene, polypropylene or utilize the remover such as fluorine series stripping agent, chain alkyl acrylate series stripping agent to carry out plastic foil or the paper etc. of surface coating.
Adhesive sheet 10 with cutting blade can utilize usual way manufacture. Such as, by the adhesive phase 12 of cutting blade 1 is fitted with adhesive sheet 3, it is possible to manufacture the adhesive sheet 10 with cutting blade.
When exfoliation temperature 25 DEG C, peeling rate 300mm/min, adhesive sheet 3 is drawn peeling force during stripping be preferably more than 0.1N/10mm from cutting blade 1. If less than 0.1N/10mm, it is likely that produce chip and fly out. On the other hand, peeling force is preferably below 0.2N/10mm. If greater than 0.2N/10mm, then have pickup and become the trend of difficulty.
(manufacture method of semiconductor device)
As shown in Figure 4, the adhesive sheet 10 with cutting blade crimps semiconductor wafer 4. As semiconductor wafer 4, it is possible to enumerate silicon wafer, silicon carbide wafer, compound semiconductor wafer etc. As compound semiconductor wafer, it is possible to enumerate gallium nitride wafer etc.
As compression bonding method, for instance the method etc. that pressing mechanisms such as utilizing crimping roller carries out extruding can be enumerated.
Crimping temperature (attaching temperature) is preferably more than 35 DEG C, more preferably more than 37 DEG C. The upper limit of crimping temperature is more low more good, it is preferred to less than 50 DEG C, more preferably less than 45 DEG C. By crimping at low temperatures, it is possible to prevent the heat affecting to semiconductor wafer 4, such that it is able to suppress the warpage of semiconductor wafer 4. It addition, pressure is preferably 1 �� 105Pa��1 �� 107Pa, more preferably 2 �� 105Pa��8 �� 106Pa��
As it is shown in figure 5, by cutting semiconductor chip 4, form chip and engage with chip 41. Chip joint chip 41 possesses semiconductor chip 5 and the adhesive film 31 being configured on semiconductor chip 5. Semiconductor chip 5 possesses chip body portion 502 and the pad 501 being configured in chip body portion 502. Pad 501 is electrode pad. Material as pad 501, it is possible to enumerate aluminum etc. In this operation, it is possible to adopt what be cut into the adhesive sheet 10 with cutting blade to be referred to as the cutting mode etc. entirely cut. It is not particularly limited as cutter sweep, it is possible to use known device. It addition, semiconductor wafer 4 is owing to being adhesively fixed by the adhesive sheet 10 with cutting blade, chip breach or chip therefore can be suppressed to fly out, and also the breakage of semiconductor wafer 4 can be suppressed.
Chip joint chip 41 is picked up. Method as pickup is not particularly limited, it is possible to adopt known various method. Such as can enumerate by each semiconductor chip 5 from cutting blade adhesive sheet 10 side pin jack-up, then pick up the method etc. of chip joint chip 41 with pick device.
When adhesive phase 12 is ultraviolet hardening, it is being picked up after adhesive phase 12 irradiation ultraviolet radiation. Thus, owing to the chip joint bonding force of chip 41 is reduced by adhesive phase 12, chip joint chip 41 can be therefore easily picked up. The conditions such as exposure rate during ultraviolet radiation, irradiation time are not particularly limited, as long as suitably setting as required.
As shown in Figure 6, adherend 6 obtains the adherend 61 with semiconductor chip by being crimped on by chip joint chip 41. The adhesive film 31 possess adherend 6 with the adherend 61 of semiconductor chip, being configured in adherend 6 and the semiconductor chip 5 being configured on adhesive film 31. Adherend 6 possesses main part 602 and the portion of terminal 601 being configured on main part 602.
Chip joint chip 41 is crimped on the temperature (hereinafter referred to as " die bonding temperature ") in adherend 6 and is preferably more than 80 DEG C, more preferably more than 90 DEG C. It addition, die bonding temperature is preferably less than 150 DEG C, more preferably less than 130 DEG C.
Adhesive film 31 is made to solidify by the adherend 61 with semiconductor chip being heated under elevated pressure. Thus, semiconductor chip 5 is made to be bonded to adherend 6. By making adhesive film 31 solidify under elevated pressure, so that it may so that the space being present between adhesive film 31 and adherend 6 disappears, such that it is able to guarantee the area that adhesive film 31 contacts with adherend 6.
As the method being heated under elevated pressure, for instance the method etc. that the adherend 61 with semiconductor chip being arranged in the chamber being filled with noble gas is heated can be enumerated. The pressure of pressured atmosphere is preferably 0.5kg/cm2(4.9��10-2MPa) more than, more preferably 1kg/cm2(9.8��10-2MPa) more than, more preferably 5kg/cm2(4.9��10-1MPa) more than. If 0.5kg/cm2Above, then the space being present between adhesive film 31 and adherend 6 can be made easily to disappear. The pressure of pressured atmosphere is preferably 20kg/cm2(1.96MPa) below, more preferably 18kg/cm2(1.77MPa) below, more preferably 15kg/cm2(1.47MPa) below. If 20kg/cm2Hereinafter, then stretching out of the adhesive film 31 caused by excessive pressurization can be suppressed.
Heating-up temperature is preferably more than 80 DEG C, more preferably more than 120 DEG C, more preferably more than 150 DEG C, it is particularly preferred to be more than 170 DEG C. If more than 80 DEG C, then adhesive film 31 can be set to the hardness of appropriateness, it is possible to use pressurizing and ageing makes space effectively disappear. Heating-up temperature is preferably less than 260 DEG C, more preferably less than 200 DEG C, more preferably less than 180 DEG C. If less than 260 DEG C, then it is possible to prevent the decomposition of adhesive film 31.
It is preferably more than 0.1 hour heat time heating time, more preferably more than 0.2 hour. It is preferably less than 24 hours heat time heating time, more preferably less than 3 hours, more preferably less than 1 hour, it is particularly preferred to be less than 30 minutes.
As it is shown in fig. 7, carry out the wire bond operation electrically connected by pad 501 with portion of terminal 601 bonding wire 7. Material as bonding wire 7, it is possible to enumerate copper etc.
Wire bond operation includes the step engaged one end of bonding wire 7, the step etc. engaged with portion of terminal 601 by the other end of bonding wire 7 with pad 501.
For the step engaged with pad 501 one end of bonding wire 7, specifically, it is the step engaged by bonding wire 7 by bonding wire 7 being applied ultrasound wave while being crimped on pad 501 by one end of bonding wire 7 with pad 501.
Preferably in more than 175 DEG C, more preferably in 200 DEG C of joints carried out above. On the other hand, it is preferable that below 300 DEG C, be carried out below engaging more preferably in 260 DEG C.
For the step engaged with portion of terminal 601 by the other end of bonding wire 7, specifically, it is the step engaged by bonding wire 7 by bonding wire 7 being applied ultrasound wave while being crimped in portion of terminal 601 by the other end of bonding wire 7 with portion of terminal 601.
After carrying out wire bond operation, carry out the sealing process utilizing sealing resin 8 to be sealed by semiconductor chip 5. This operation is to carry out to protect the semiconductor chip 5 being equipped in adherend 6, bonding wire 7. This operation is by the resin mold molding sealed being carried out. As sealing resin 8, for instance use the resin of epoxy. Heating-up temperature during resin seal is preferably more than 165 DEG C, more preferably more than 170 DEG C, and heating-up temperature is preferably less than 185 DEG C, more preferably less than 180 DEG C.
As required, it is also possible to be heated (rear curing process) after sealing again. Thus, so that it may so that the sealing resin 8 solidifying deficiency in sealing process fully solidifies. Heating-up temperature can suitably set.
As set forth above, it is possible to utilize the method including following operation to manufacture semiconductor device, i.e. prepare the operation of the adhesive sheet 10 with cutting blade; Adhesive sheet 3 crimps the operation of semiconductor wafer 4; By cutting the operation being configured at semiconductor wafer 4 in adhesive sheet 3 and form the chip joint chip 41 possessing the semiconductor chip 5 including pad 501 and the adhesive film 31 that is configured on semiconductor chip 5; The operation of the adherend 61 with chip is formed by crimping chip joint chip 41 in the adherend 6 possess portion of terminal 601; By heating the operation making adhesive film 31 solidify with the adherend 61 of chip; The operation of the step including engaging one end of the bonding wire 7 containing copper with pad 501 carried out after the operation making adhesive film 31 solidify and the step that the other end of bonding wire 7 is engaged with portion of terminal 601.
[embodiment]
Hereinafter, the present invention is described in detail to use embodiment, but the present invention is without departing from its purport, is just not limited to below example.
The composition used in embodiment is illustrated.
Acrylic rubber: the TeisanResinSG-708-6 (containing carboxyl and the acrylate copolymer of hydroxyl, Mw:70 ten thousand, acid number: 9mgKOH/g, glass transition temperature: 4 DEG C) of NagaseChemteX company
Epoxy resin 1: the EPPN-501HY (epoxy resin of epoxide equivalent 169g/eq.) of chemical medicine company of Japan
Epoxy resin 2: the EOCN-1020 (epoxy resin of epoxide equivalent 198g/eq.) of chemical medicine company of Japan
Epoxy resin 3: the jER828 (epoxy resin of epoxide equivalent 190g/eq.) of Mitsubishi Chemical Ind
Phenolic resin 1: the bright MEH-7851S (phenolic resin of hydroxyl equivalent 209g/eq.) with chemical conversion company
The P-180 (phenolic resin of hydroxyl equivalent 105g/eq.) of phenolic resin 2: Huang Chuan chemical company
Silica filler: (BET specific surface area is 6.5m to the SO-25R of Admatechs company2/ g, new mohs hardness are the spherical silicon dioxide of 7)
Catalyst: the TPP-MK (tetraphenyl four ptolylboronic acid salt) that northern emerging chemical industry (strain) is made
[adhesive sheet and the making of adhesive sheet with cutting blade]
According to the match ratio recorded in table 1, each composition recorded and solvent (butanone) are added in the stirred tank of mixing agitator (Kyence HM-500), carry out stirring in 3 minutes, mixing with stir mode in table 1. After the varnish die coating machine of gained is coated on demoulding process film (MRA50 that Rhizoma Sparganii resin (strain) is made) above, so as to dry, obtain the adhesive sheet of thickness 20 ��m. From adhesive sheet, cut out the circular adhesive sheet of diameter 230mm, by circular adhesive sheet on the adhesive phase that 25 DEG C are attached to cutting blade (P2130G that day east electrician (strain) makes), produce the adhesive sheet with cutting blade.
[evaluation]
Adhesive sheet to gained, the adhesive sheet with cutting blade, carried out following evaluation. The results are shown in Table 1.
(mensuration of store elastic modulus and Tg)
The lamination sheets of thickness 400 ��m is obtained 60 DEG C of laminating adhesive sheets. Processed goods is obtained by lamination sheets is processed as the size of 10mm �� 30mm �� 400 ��m. By by processed goods 175 DEG C heat 30 minutes and so as to solidify. Dynamic viscoelastic system determinator (RSAIII of TAInstruments company) is used to measure the viscoelasticity of processed goods after hardening. Condition determination is to carry out under temperature range-10 DEG C��285 DEG C, 10 DEG C/min of programming rate, chuck spacing 22.5mm, 10Hz. Store elastic Moduli data according to gained, reads the store elastic modulus of 200 DEG C. Additionally the temperature at the peak of the tan8 of gained is set to Tg.
(mensuration of reaction heat)
The test film of 10mg is cut out from adhesive sheet. Test film aluminum dish is clamped, thus having prepared mensuration sample. It is also prepared for only comprising the reference sample of aluminum dish. Use Differential Scanning Calorimetry determinator (DSC6220 of SeikoInstruments company), measured with 10 DEG C/min of programming rate, temperature range 25 DEG C��300 DEG C. By the heat at the exothermic reaction peak of gained is calculated reaction heat divided by the weight of sample.
(mensuration of peak extinction time)
The test film of 10mg is cut out from adhesive sheet. Test film aluminum dish is clamped, thus having prepared test sample. It is also prepared for only comprising the reference sample of aluminum dish. Use Differential Scanning Calorimetry determinator (DSC6220 of SeikoInstruments company), carry out DSC mensuration when being warmed up to 175 DEG C with 3 minutes from 25 DEG C, then maintain 175 DEG C 3 hours. Read from DSC curve from arriving 175 DEG C of times disappeared to reaction peak. And, so-called " reaction peak disappears ", refer to that in the way of making test sample equal with the temperature of reference sample the difference of the input of the heat energy of time per unit to both applyings is certain. The DSC curve of embodiment 2 is shown in Fig. 8.
(wire bond)
One side has been carried out the wafer of aluminium-vapour deposition by grinding, thus obtaining the cutting wafer of thickness 100 ��m. Cutting wafer is attached in the adhesive sheet with cutting blade, is then cut into 2mm square, thus obtain the chip with adhesive sheet. By with adhesive sheet chip 120 DEG C, 0.1MPa, 1sec when die bonding on Cu lead frame. By making adhesive sheet solidify 175 DEG C of heating 30 minutes. Use apparatus for wire bonding (MaxumPlus of K&S company), on a single die the Cu metal wire of 5 linear diameters of welding 20 ��m. When exporting 80Amp, time 10ms and load 50g, Cu metal wire is connected on Cu lead frame. 200 DEG C, output 125Amp, time 10ms and load 80g when Cu metal wire is connected on chip. Will be unable to be judged to more than 1 situation being welded on chip in 5 Cu metal wires ��, 5 situations about being welded on chip in 5 Cu metal wires will can be judged to zero.
[table 1]
The explanation of symbol
10 with the adhesive sheet of cutting blade, 1 cutting blade, 11 base materials, 12 adhesive phases, 3 adhesive sheets, 4 semiconductor wafers, 5 semiconductor chips, 501 pads, 502 chip body portions, 41 chip welding chips, 6 adherend, 601 portion of terminal, 602 main parts, 61 with the adherend of semiconductor chip, 7 bonding wires, 8 sealing resins.
Claims (9)
1. adhesive sheet used in the manufacture of a semiconductor device, utilize be warmed up to 175 DEG C from 25 DEG C with 3 minutes, then 175 DEG C are maintained 3 hours DSC measure in the DSC curve described, from arriving 175 DEG C of times disappeared to reaction peak less than 30 minutes
Measuring under 10Hz by heating 30 minutes so as to the viscoelasticity of the solidfied material solidifying and obtaining at 175 DEG C, the storage tensile modulus of 200 DEG C thus obtained is more than 100MPa.
2. adhesive sheet according to claim 1, wherein,
Utilize in the scope of 25 DEG C��300 DEG C with 10 DEG C per minute heat up when DSC to measure the reaction heat that obtains be more than 80mJ/mg.
3. adhesive sheet according to claim 1, wherein,
By heating 30 minutes so as to the Tg of the solidfied material solidifying and obtaining is more than 150 DEG C at 175 DEG C.
4. adhesive sheet according to claim 1,
It contains BET specific surface area is 4m2The silica filler of/more than g,
The content of described silica filler is more than 50 weight %.
5. adhesive sheet according to claim 1,
It contains the phenolic resin that hydroxyl equivalent is below 120g/eq..
6. adhesive sheet according to claim 1,
It contains resinous principle,
Described resinous principle comprises epoxy resin, phenolic resin and acrylic resin,
The content of the described acrylic resin in described resinous principle 100 weight % is below 14 weight %.
7. adhesive sheet according to claim 6, wherein,
The hydroxyl equivalent of described phenolic resin is below 120g/eq..
8. the adhesive sheet with cutting blade, possesses:
Cutting blade, it possesses base material and is configured at the adhesive phase on described base material; And
Adhesive sheet described in claim 1, it is configured on described adhesive phase.
9. a manufacture method for semiconductor device, including:
The operation of the preparation adhesive sheet with cutting blade described in claim 8;
The operation of semiconductor wafer is crimped in described adhesive sheet;
By cutting the described semiconductor wafer being configured in described adhesive sheet, and form the operation of the chip joint chip of the semiconductor chip possessing pad and the adhesive film being configured on described semiconductor chip;
The operation of the adherend of microarray strip is formed by crimping described chip joint chip in the adherend possessing portion of terminal;
The operation making described adhesive film solidify by heating the adherend of described microarray strip;
The operation of the step including engaging one end of the metal wire containing copper with described pad carried out after the operation making described adhesive film solidify and the step that the other end of described metal wire is engaged with described portion of terminal.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014-238021 | 2014-11-25 | ||
| JP2014238021A JP6356582B2 (en) | 2014-11-25 | 2014-11-25 | Adhesive sheet, adhesive sheet with dicing sheet, and method for manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105623580A true CN105623580A (en) | 2016-06-01 |
| CN105623580B CN105623580B (en) | 2020-11-06 |
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| CN201510834272.6A Active CN105623580B (en) | 2014-11-25 | 2015-11-25 | Adhesive sheet, adhesive sheet with dicing sheet, and method for manufacturing semiconductor device |
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| Country | Link |
|---|---|
| JP (1) | JP6356582B2 (en) |
| KR (1) | KR102408996B1 (en) |
| CN (1) | CN105623580B (en) |
| TW (1) | TWI656189B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108949051A (en) * | 2017-05-19 | 2018-12-07 | 日东电工株式会社 | Cut die bonding film |
| CN109906504A (en) * | 2016-11-02 | 2019-06-18 | 琳得科株式会社 | Stealthy adhesive sheet for use in cutting |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6486571B1 (en) * | 2017-06-06 | 2019-03-20 | 日本化薬株式会社 | Adhesive for electronic parts |
| JP7327416B2 (en) * | 2019-01-28 | 2023-08-16 | 株式会社レゾナック | Adhesive composition, film adhesive, adhesive sheet, and method for manufacturing semiconductor device |
| WO2023152837A1 (en) * | 2022-02-09 | 2023-08-17 | 株式会社レゾナック | Film-form adhesive, dicing and die-bonding two-in-one film, semiconductor device, and method for manufacturing same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101661909A (en) * | 2008-08-28 | 2010-03-03 | 日东电工株式会社 | Thermosetting die-bonding film |
| CN105623533A (en) * | 2014-11-21 | 2016-06-01 | 日东电工株式会社 | Adhesive sheet, adhesive sheet with dicing sheet, laminated sheet and method of manufacturing semiconductor device |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP4449325B2 (en) * | 2003-04-17 | 2010-04-14 | 住友ベークライト株式会社 | Adhesive film for semiconductor, semiconductor device, and manufacturing method of semiconductor device. |
| US7560821B2 (en) * | 2005-03-24 | 2009-07-14 | Sumitomo Bakelite Company, Ltd | Area mount type semiconductor device, and die bonding resin composition and encapsulating resin composition used for the same |
| JP5580701B2 (en) * | 2010-09-13 | 2014-08-27 | 日東電工株式会社 | Dicing die bond film |
| JP2012092225A (en) * | 2010-10-27 | 2012-05-17 | Hitachi Chemical Co Ltd | Adhesive film, adhesive film with dicing tape, and semiconductor device using the same |
| JP2012186361A (en) * | 2011-03-07 | 2012-09-27 | Nitto Denko Corp | Dicing/die-bonding film and semiconductor element |
| JP5888805B2 (en) | 2011-09-01 | 2016-03-22 | 日東電工株式会社 | Adhesive film and dicing die bond film |
| SG11201405729QA (en) * | 2012-04-10 | 2014-11-27 | Sumitomo Bakelite Co | Semiconductor device, die attaching material, and method for manufacturing semiconductor device |
-
2014
- 2014-11-25 JP JP2014238021A patent/JP6356582B2/en active Active
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2015
- 2015-11-16 KR KR1020150160596A patent/KR102408996B1/en active IP Right Grant
- 2015-11-17 TW TW104137921A patent/TWI656189B/en active
- 2015-11-25 CN CN201510834272.6A patent/CN105623580B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101661909A (en) * | 2008-08-28 | 2010-03-03 | 日东电工株式会社 | Thermosetting die-bonding film |
| CN105623533A (en) * | 2014-11-21 | 2016-06-01 | 日东电工株式会社 | Adhesive sheet, adhesive sheet with dicing sheet, laminated sheet and method of manufacturing semiconductor device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109906504A (en) * | 2016-11-02 | 2019-06-18 | 琳得科株式会社 | Stealthy adhesive sheet for use in cutting |
| CN109906504B (en) * | 2016-11-02 | 2023-04-14 | 琳得科株式会社 | Adhesive sheet for stealth dicing |
| CN108949051A (en) * | 2017-05-19 | 2018-12-07 | 日东电工株式会社 | Cut die bonding film |
| CN108949051B (en) * | 2017-05-19 | 2022-03-22 | 日东电工株式会社 | Dicing die bonding film |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201627452A (en) | 2016-08-01 |
| JP6356582B2 (en) | 2018-07-11 |
| KR102408996B1 (en) | 2022-06-14 |
| KR20160062692A (en) | 2016-06-02 |
| TWI656189B (en) | 2019-04-11 |
| CN105623580B (en) | 2020-11-06 |
| JP2016100532A (en) | 2016-05-30 |
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