CN109111867B - Dicing die bonding film - Google Patents

Dicing die bonding film Download PDF

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Publication number
CN109111867B
CN109111867B CN201810654758.5A CN201810654758A CN109111867B CN 109111867 B CN109111867 B CN 109111867B CN 201810654758 A CN201810654758 A CN 201810654758A CN 109111867 B CN109111867 B CN 109111867B
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adhesive layer
mass
bonding
die
dicing
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CN109111867A (en
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福井章洋
高本尚英
大西谦司
宍户雄一郎
木村雄大
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Nitto Denko Corp
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Nitto Denko Corp
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C09J7/24—Plastics; Metallised plastics based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/08—Macromolecular additives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C09J133/14—Homopolymers or copolymers of esters of esters containing halogen, nitrogen, sulfur or oxygen atoms in addition to the carboxy oxygen
    • C—CHEMISTRY; METALLURGY
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    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
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    • C09J201/00—Adhesives based on unspecified macromolecular compounds
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    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
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    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/10—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet
    • C09J2301/12—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers
    • C09J2301/122—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers the adhesive layer being present only on one side of the carrier, e.g. single-sided adhesive tape
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    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/20—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself
    • C09J2301/208—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself the adhesive layer being constituted by at least two or more adjacent or superposed adhesive layers, e.g. multilayer adhesive
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • C—CHEMISTRY; METALLURGY
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    • C09J2423/00—Presence of polyolefin
    • C09J2423/04—Presence of homo or copolymers of ethene
    • C09J2423/046—Presence of homo or copolymers of ethene in the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
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    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
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    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

Provided is a dicing die-bonding film having an adhesive layer which has excellent storage stability, can be cured in a short time, and can be suitably wire-bonded after curing. A dicing die-bonding film comprising: a dicing tape having a laminated structure comprising a substrate and an adhesive layer; and an adhesive layer releasably and tightly adhered to the adhesive layer in the dicing tape, wherein the adhesive layer contains a thermosetting component, a filler and a curing accelerator, and has a heat generation amount measured by DSC after heating at 130 ℃ for 30 minutes of 60% or less of a heat generation amount before heating, and a storage modulus at 130 ℃ after heating of 20MPa or more and 4000MPa or less.

Description

Dicing die bonding film
Technical Field
The present invention relates to dicing die-bonding films. More specifically, the present invention relates to a dicing die-bonding film that can be used in a process of manufacturing a semiconductor device.
Background
In the manufacturing process of a semiconductor device, a dicing die bonding film is sometimes used in the process of obtaining a semiconductor chip having an adhesive film for die bonding having a size corresponding to that of a chip, that is, a semiconductor chip with an adhesive layer for die bonding. The dicing die-bonding film has a size corresponding to a semiconductor wafer to be processed, and includes, for example, a dicing tape including a base material and an adhesive layer, and a die-bonding film (adhesive layer) releasably adhering to the adhesive layer side.
As one of the methods for obtaining a semiconductor chip with an adhesive layer by dicing a die bond film, a method is known in which a dicing tape in the die bond film is subjected to expansion dicing to cut the die bond film. The method comprises bonding a semiconductor wafer on a die bonding film obtained by cutting the die bonding film. The semiconductor wafer is processed so as to be separated into a plurality of semiconductor chips by being cut together with the die bond film, for example, thereafter. Then, in order to cut the die-bonding film on the dicing tape, the dicing tape of the dicing die-bonding film is stretched in a two-dimensional direction including a radial direction and a circumferential direction of the semiconductor wafer using an expanding device. In this expanding step, the semiconductor wafer located on the die bond film is also cut at a position corresponding to the cutting position in the die bond film, and the semiconductor wafer is singulated into a plurality of semiconductor chips on the dicing die bond film or the dicing tape. Then, the plurality of semiconductor chips with die-bonding films on the dicing tape after the dicing is again subjected to the expanding step in order to widen the pitch. After the cleaning step, for example, each semiconductor chip is lifted up from the lower side of the dicing tape together with the die bonding film which is in close contact with the semiconductor chip and has a size corresponding to the chip by the needle member of the pickup mechanism, and is picked up from the dicing tape. Thus, a semiconductor chip with a die bond film, i.e., an adhesive layer, is obtained. The semiconductor chip with the adhesive layer is fixed to an adherend such as a mounting board by die bonding via the adhesive layer. Techniques relating to dicing die-bonding films used as described above are described in, for example, patent documents 1 to 3 below.
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open No. 2007-2173
Patent document 2: japanese patent application laid-open No. 2010-177401
Patent document 3: japanese patent laid-open publication No. 2016-115804
Disclosure of Invention
Problems to be solved by the invention
In recent years, the semiconductor device and the package thereof are further required to have higher functions, thinner thickness and smaller size. As one of the measures, a 3-dimensional mounting technique has been developed in which semiconductor elements (semiconductor chips) are stacked in multiple stages in the thickness direction thereof to achieve high-density integration of the semiconductor elements.
As the 3-dimensional mounting technology, for example, the following technologies are known: a semiconductor chip is fixed as a semiconductor chip with a die bonding film on an adherend such as a substrate, and a semiconductor chip with a die bonding film obtained by another method is sequentially stacked on a semiconductor chip at the lowest stage thereof. In order to avoid the electrode pad of the lead bonding surface (upper surface) of the lower semiconductor chip during lamination, the semiconductor chip with the die bonding film on the upper side may be fixed to the lower semiconductor chip with a shift in the plane extending direction. A semiconductor device (multi-stage stacked semiconductor device) obtained by such a technique, in which a plurality of stages of semiconductor chips are stacked on an adherend using a die bonding film, has a step shape, and each stage has a portion (so-called a free portion) where the semiconductor chip having the die bonding film protrudes from the upper surface of the lower semiconductor chip in a surface extending direction.
The semiconductor chip and the adherend are electrically connected (wire-bonded) with the electrode pad on the upper surface of the semiconductor chip and the terminal portion of the adherend via a bonding wire. The connection of the electrode pad and the bonding wire on the upper surface of the semiconductor chip for wire bonding is performed by using vibration energy based on ultrasonic waves and crimping energy based on application of pressure in combination under heating. Here, when the electrode pad existing on the suspended portion of the semiconductor chip is wire bonded, the suspended portion may shake due to vibration by ultrasonic waves or a load by applying pressure to the suspended portion, which causes problems such as difficulty in connection and bending of the semiconductor chip in the suspended portion.
Such a problem can be alleviated by hardening the die bond film used for bonding the semiconductor chip to some extent. Among them, in order to make the die-bonding film have a certain degree of adhesiveness at the time of stacking the semiconductor chips with the die-bonding film and a certain degree of hardness at the time of connection, a method of curing the die-bonding film to such an extent that the above-described problem is not easily generated during a period from after the semiconductor chips are stacked to before the connection is conceived. However, when sufficient curing of the die-bonding film takes time, productivity is lowered. Therefore, the die-bonding film is required to be cured in a short time.
However, since a die-bonding film that can be cured in a short time tends to be cured even during storage, storage stability (particularly storage stability at room temperature) tends to be poor. That is, curability and storage stability in a short time are in a trade-off relationship. Therefore, there is a demand for development of a die bonding film (adhesive layer) which has excellent storage stability, can be cured in a short time, and can perform appropriate wire bonding (particularly appropriate wire bonding to a free portion) after curing.
The present invention has been made in view of the above problems, and an object of the present invention is to provide a dicing die bonding film having an adhesive layer which is excellent in storage stability, can be cured in a short time, and can be subjected to appropriate wire bonding after curing.
Means for solving the problems
As a result of intensive studies to achieve the above object, the present inventors have found that when an adhesive layer containing a thermosetting component, a filler and a curing accelerator and having a heat generation amount measured by DSC after heating at 130 ℃ for 30 minutes which is 60% or less of the heat generation amount before heating and a storage modulus at 130 ℃ after heating which is 20MPa to 4000MPa is used, the adhesive layer is excellent in storage stability when dicing a die bonding film, can be cured in a short time, and can be suitably wire bonded after curing. The present invention has been completed based on these findings.
That is, the present invention provides a dicing die-bonding film including: a dicing tape having a laminated structure comprising a substrate and an adhesive layer; and an adhesive layer releasably and tightly adhered to the adhesive layer in the dicing tape, wherein the adhesive layer contains a thermosetting component, a filler and a curing accelerator, and has a heat generation amount measured by DSC after heating at 130 ℃ for 30 minutes of 60% or less of a heat generation amount before heating, and a storage modulus at 130 ℃ after heating of 20MPa or more and 4000MPa or less.
The dicing die-bonding film of the present invention includes a dicing tape and an adhesive layer. The dicing tape has a laminated structure including a substrate and an adhesive layer. The adhesive layer is releasably adhered to the adhesive layer in the dicing tape. The dicing die-bonding film having such a configuration can be used for obtaining a semiconductor chip with an adhesive layer in a manufacturing process of a semiconductor device.
In the dicing die-bonding film of the present invention, the adhesive layer contains the thermosetting component, the filler and the curing accelerator as described above. And the calorific value measured by DSC after heating at 130 ℃ for 30 minutes is 60% or less of the calorific value before heating. This means that 60% or more of the uncured thermosetting component in the adhesive layer before heating is cured by heating at 130 ℃ for 30 minutes. The adhesive layer in the dicing die-bonding film of the present invention has the above-described configuration, and the adhesive layer is cured in a short time because the curing ratio of the adhesive layer is large by heating under a heating condition for a short time, and the storage modulus can be improved in a short time. Further, since the curing ratio of the adhesive layer is large by heating under a heating condition for a short time, the adhesive layer is less likely to be cured until heating during storage, that is, the adhesive layer has excellent storage stability.
In the dicing die-bonding film of the present invention, the storage modulus of the adhesive layer after heating at 130 ℃ is 20MPa to 4000MPa as described above. When the storage modulus after heating is 20MPa or more, the adhesive layer can be cured in a short time and has a certain degree of hardness after curing, and therefore, appropriate wire bonding can be performed after curing. In particular, when the adhesive layer is used in a multi-stage stacked semiconductor device having a suspended portion, it is possible to suppress vibration of the suspended portion due to ultrasonic waves or a load due to pressurization to the suspended portion at the time of wire bonding, and to perform appropriate wire bonding to the suspended portion. Further, by setting the storage modulus after heating to 4000MPa or less, the adhesion reliability to an adherend and the adhesion reliability between semiconductor chips after curing are also excellent.
The thermosetting component in the adhesive layer is preferably a thermosetting resin and/or a thermoplastic resin containing a thermosetting functional group. The adhesive layer is formed using a thermosetting resin or a thermoplastic resin containing a thermosetting functional group as a thermosetting component, and thus has excellent storage stability, can be cured in a short time, and can be subjected to appropriate wire bonding (particularly appropriate wire bonding to a free portion) after curing.
The adhesive layer preferably has a viscosity of 300 to 100000 pas at 90 ℃. In a multi-stage stacked semiconductor device, since there are usually many circuit layers, the semiconductor chip is likely to be largely warped, and thus the semiconductor chip tends to be easily peeled off. However, when the viscosity of the adhesive layer at 90 ℃ is 300Pa · s or more, even when the viscosity is reduced by heat from the die bonding stage when die bonding a semiconductor chip which is relatively easy to warp, the semiconductor chip is less likely to peel off when the semiconductor chip warps. When the viscosity is 100000Pa · s or less, the adhesion reliability to an adherend and the adhesion reliability between semiconductor chips are excellent even after curing.
The filler in the adhesive layer is preferably silica having an average particle diameter of 70 to 300 nm. The average particle diameter is smaller than the average particle diameter of a filler generally used for cutting the adhesive layer in the die-bonding film. When silica having an average particle diameter of 300nm or less is used as the filler, which is smaller than usual, the surface area of the filler in the adhesive layer is large, and it is estimated that the reaction accelerator is restricted by the filler, and the action of the reaction accelerator during storage is suppressed, and the storage stability is more excellent. Further, when silica having an average particle diameter of 70nm or more is used as the filler, the curability of the adhesive layer is improved, and the curing ratio of the adhesive layer is likely to be increased by heating under a short period of time. In addition, wettability and adhesiveness to an adherend such as a semiconductor wafer are further improved.
ADVANTAGEOUS EFFECTS OF INVENTION
The dicing die-bonding film of the present invention has an adhesive layer which is excellent in storage stability, can be cured in a short time, and can be suitably wire-bonded after curing. Therefore, when the semiconductor chip with an adhesive layer obtained by using the dicing die-bonding film of the present invention is applied to a multi-stage stacked semiconductor device having a suspended portion, not only is it excellent in storage stability and can be cured in a short time, but also shaking of the suspended portion caused by vibration by ultrasonic waves or a load by pressure applied to the suspended portion at the time of wire bonding can be suppressed, and appropriate wire bonding to the suspended portion can be performed.
In addition, from the viewpoint of storage stability, the dicing die-bonding film is generally stored in a refrigerated state, and in such a case, it is necessary to return to normal temperature during use. Therefore, the time required for returning to normal temperature is required during cold storage, and the productivity is lowered. However, the dicing die-bonding film of the present invention is also excellent in storage stability at room temperature, does not need to be returned to room temperature when used, and is also excellent in productivity.
Drawings
Fig. 1 is a schematic cross-sectional view showing one embodiment of a dicing die-bonding film of the present invention.
Fig. 2 shows a part of the steps in the method for manufacturing a semiconductor device using the dicing die-bonding film shown in fig. 1.
Fig. 3 shows a process subsequent to the process shown in fig. 2.
Fig. 4 shows a subsequent process to that shown in fig. 3.
Fig. 5 shows a process subsequent to the process shown in fig. 4.
Fig. 6 shows a subsequent process to that shown in fig. 5.
Fig. 7 shows a process subsequent to the process shown in fig. 6.
Fig. 8 shows a part of steps in a modification of the method for manufacturing a semiconductor device using the dicing die-bonding film shown in fig. 1.
Fig. 9 shows a part of steps in a modification of the method for manufacturing a semiconductor device using the dicing die-bonding film shown in fig. 1.
Fig. 10 shows a part of steps in a modification of the method for manufacturing a semiconductor device using the dicing die-bonding film shown in fig. 1.
Fig. 11 shows a part of steps in a modification of the method for manufacturing a semiconductor device using the dicing die-bonding film shown in fig. 1.
Description of the reference numerals
1. Dicing die bonding film
10. Cutting belt
11. Base material
12. Adhesive layer
20 21 adhesive layer
W,30A,30C semiconductor wafer
30B semiconductor wafer division body
30a dividing groove
30b modified region
31. Semiconductor chip
Detailed Description
[ dicing die-bonding film ]
The dicing die-bonding film of the invention comprises: a dicing tape having a laminated structure including a substrate and an adhesive layer; and an adhesive layer that is releasably adhered to the adhesive layer in the dicing tape. One embodiment of the dicing die-bonding film of the present invention will be described below. Fig. 1 is a schematic cross-sectional view showing one embodiment of the dicing die-bonding film of the present invention.
As shown in fig. 1, the dicing die-bonding film 1 includes: cutting the tape 10; the adhesive layer 20 laminated on the adhesive layer 12 in the dicing tape 10 can be used in a spreading step in a process of obtaining a semiconductor chip with an adhesive layer in the manufacture of a semiconductor device. The dicing die-bonding film 1 has a disk shape, and its size corresponds to a semiconductor wafer to be processed in the manufacturing process of a semiconductor device. The dicing die-bonding film 1 has a diameter in a range of, for example, 345 to 380mm (12-inch wafer compliant type), 245 to 280mm (8-inch wafer compliant type), 195 to 230mm (6-inch wafer compliant type), or 495 to 530mm (18-inch wafer compliant type). The dicing tape 10 in the dicing die-bonding film 1 has a laminated structure including a base material 11 and an adhesive layer 12.
(adhesive layer)
The adhesive layer 20 has a function as an adhesive exhibiting thermosetting property for die bonding, and further has a function of adhesion for holding a workpiece such as a semiconductor wafer and a frame member such as a ring frame as necessary. The adhesive layer 20 can be cut by applying a tensile stress, and the adhesive layer can be used by cutting the adhesive layer by applying a tensile stress.
Adhesive layer 20 and the adhesive for forming adhesive layer 20 contain a thermosetting component, a filler and a curing accelerator. The thermosetting component is preferably at least one of a thermosetting resin and a thermoplastic resin having a curable functional group capable of reacting with a curing agent to bond (thermoplastic resin containing a thermosetting functional group). That is, the thermosetting component is preferably a thermosetting resin and/or a thermoplastic resin containing a thermosetting functional group. The adhesive layer 20 having a structure using a thermosetting resin or a thermoplastic resin containing a thermosetting functional group as a thermosetting component has excellent storage stability, can be cured in a short time, and can be subjected to appropriate wire bonding (particularly appropriate wire bonding to a free portion) after curing. When the adhesive layer 20 contains a thermosetting resin as the thermosetting component, the thermosetting resin may contain a thermoplastic resin as an adhesive component, for example. When the adhesive layer 20 contains a thermoplastic resin containing a thermosetting functional group, the adhesive layer 20 does not need to contain a thermosetting resin (epoxy resin or the like). Adhesive layer 20 may have a single-layer structure or a multi-layer structure.
Examples of the thermosetting resin include epoxy resins, phenol resins, amino resins, unsaturated polyester resins, polyurethane resins, silicone resins, thermosetting polyimide resins, and the like. The thermosetting resin may be used alone or in combination of two or more. An epoxy resin is preferable as the thermosetting resin because of a tendency that the content of ionic impurities and the like which may cause corrosion of a semiconductor chip to be die bonded is small. As the curing agent for the epoxy resin, a phenol resin is preferable.
Examples of the epoxy resin include: epoxy resins of bisphenol a type, bisphenol F type, bisphenol S type, brominated bisphenol a type, hydrogenated bisphenol a type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type, o-cresol novolac type, trishydroxyphenylmethane type, tetrakis (phenylhydroxy) ethane (Tetraphenylolethane) type, hydantoin type, triglycidyl isocyanurate type, and glycidylamine type. Among them, a novolak type epoxy resin, a biphenyl type epoxy resin, a trishydroxyphenylmethane type epoxy resin, and a tetrakis (phenylhydroxy) ethane type epoxy resin are preferable because they are highly reactive with a phenolic resin as a curing agent and excellent in heat resistance.
Examples of the phenolic resin which functions as a curing agent for an epoxy resin include: and a novolak phenol resin, a resol phenol resin, and a polyoxyethylene such as a poly-p-oxystyrene. Examples of the novolak phenol resin include: phenol novolac resins, phenol aralkyl resins, cresol novolac resins, tert-butylphenol novolac resins, nonylphenol novolac resins, and the like. The phenol resin may be used alone or in combination of two or more. Among them, phenol novolac resins and phenol aralkyl resins are preferable from the viewpoint of increasing the connection reliability of an epoxy resin used as an adhesive for die bonding, when used as a curing agent for the adhesive.
In the adhesive layer 20, the phenolic resin is contained in an amount such that the hydroxyl group in the phenolic resin is preferably 0.5 to 2.0 equivalents, more preferably 0.7 to 1.5 equivalents, relative to 1 equivalent of the epoxy group in the epoxy resin component, from the viewpoint of sufficiently advancing the curing reaction of the epoxy resin and the phenolic resin.
When the adhesive layer 20 contains a thermosetting resin, the content of the thermosetting resin is preferably 10 to 70% by mass, and more preferably 20 to 60% by mass, based on the total mass of the adhesive layer 20. When the content ratio is 10% by mass or more, the adhesive layer 20 can be made to exhibit a function as a thermosetting adhesive agent, and the storage modulus can be increased, so that appropriate wire bonding (particularly appropriate wire bonding to a suspended portion) can be easily achieved. When the content ratio is 70% by mass or less, the storage modulus can be suppressed from becoming excessively high, and even when the semiconductor chip is warped in the multi-stage stacked semiconductor device, the semiconductor chip is more unlikely to be peeled off.
Examples of the thermoplastic resin include: natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, an ethylene-vinyl acetate copolymer, an ethylene-acrylic acid ester copolymer, a polybutadiene resin, a polycarbonate resin, a thermoplastic polyimide resin, a polyamide resin such as 6-nylon and 6, 6-nylon, a phenoxy resin, an acrylic resin, a saturated polyester resin such as PET and PBT, a polyamideimide resin, a fluororesin, and the like. The thermoplastic resin may be used alone or in combination of two or more. The thermoplastic resin is preferably an acrylic resin because it has few ionic impurities and high heat resistance, and thus the bonding reliability by the adhesive layer 20 is easily ensured.
The acrylic resin is a polymer containing, as a constituent unit of the polymer, a constituent unit derived from an acrylic monomer (a monomer component having a (meth) acryloyl group in the molecule). The acrylic polymer is preferably a polymer having the largest content of constituent units derived from a (meth) acrylate ester in terms of mass ratio. The acrylic polymer may be used alone or in combination of two or more. In the present specification, "(meth) acrylic acid" means "acrylic acid" and/or "methacrylic acid" ("either or both of acrylic acid" and "methacrylic acid"), and the like.
Examples of the (meth) acrylate include a hydrocarbon group-containing (meth) acrylate. Examples of the (meth) acrylate containing a hydrocarbon group include alkyl (meth) acrylates, cycloalkyl (meth) acrylates, and aryl (meth) acrylates. Examples of the alkyl (meth) acrylate include: methyl, ethyl, propyl, isopropyl, butyl, isobutyl, sec-butyl, tert-butyl, pentyl, isopentyl, hexyl, heptyl, octyl, 2-ethylhexyl, isooctyl, nonyl, decyl, isodecyl, undecyl, dodecyl (lauryl), tridecyl, tetradecyl, hexadecyl, octadecyl, eicosyl esters of (meth) acrylic acid and the like. Examples of the cycloalkyl (meth) acrylate include: cyclopentyl esters, cyclohexyl esters of (meth) acrylic acid, and the like. Examples of the aryl (meth) acrylate include: phenyl and benzyl (meth) acrylates. The hydrocarbon group-containing (meth) acrylate may be used alone or in combination of two or more. In order to allow the adhesive layer 20 to suitably exhibit basic characteristics such as adhesiveness due to the hydrocarbon group-containing (meth) acrylate, the proportion of the hydrocarbon group-containing (meth) acrylate in the entire monomer components for forming the acrylic resin is preferably 40% by mass or more, and more preferably 60% by mass or more.
The acrylic resin may contain a constituent unit derived from another monomer component copolymerizable with the hydrocarbon group-containing (meth) acrylate for the purpose of improving cohesive force, heat resistance, and the like. Examples of the other monomer components include: a carboxyl group-containing monomer; an acid anhydride monomer; a hydroxyl-containing monomer; a glycidyl group-containing monomer; a sulfonic acid group-containing monomer; a monomer containing a phosphoric acid group; and functional group-containing monomers such as acrylamide and acrylonitrile. Examples of the carboxyl group-containing monomer include: acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, crotonic acid, and the like. Examples of the acid anhydride monomer include: maleic anhydride, itaconic anhydride, and the like. Examples of the hydroxyl group-containing monomer include: 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, and (4-hydroxymethylcyclohexyl) methyl (meth) acrylate. Examples of the glycidyl group-containing monomer include: glycidyl (meth) acrylate, methyl glycidyl (meth) acrylate, and the like. Examples of the sulfonic acid group-containing monomer include: styrenesulfonic acid, allylsulfonic acid, 2- (meth) acrylamide-2-methylpropanesulfonic acid, (meth) acrylamidopropanesulfonic acid, sulfopropyl (meth) acrylate, (meth) acryloyloxynaphthalenesulfonic acid, and the like. Examples of the phosphoric acid group-containing monomer include: 2-hydroxyethyl acryloyl phosphate, and the like. The other monomer components may be used alone or in combination of two or more. In order to allow the adhesive layer 20 to suitably exhibit basic characteristics such as adhesiveness due to the hydrocarbon group-containing (meth) acrylate, the proportion of the other monomer components is preferably 60% by mass or less, and more preferably 40% by mass or less, of the total monomer components used to form the acrylic resin.
When the adhesive layer 20 contains a thermoplastic resin, the content of the thermoplastic resin is preferably 3 to 40% by mass, and more preferably 10 to 30% by mass, based on the total mass of the adhesive layer 20. When the content ratio is 3% by mass or more, the storage modulus can be suppressed from becoming excessively high, and even when the semiconductor chip is warped in the multi-stage stacked semiconductor device, the semiconductor chip is more unlikely to be peeled off. When the content ratio is 40% by mass or less, the storage modulus can be increased, and appropriate wire bonding (particularly appropriate wire bonding to a suspended portion) can be easily achieved.
As the thermoplastic resin having a thermosetting functional group, for example, an acrylic resin having a thermosetting functional group can be used. The acrylic resin in the thermosetting functional group-containing acrylic resin preferably contains a constituent unit derived from a (meth) acrylate ester as a constituent unit having the largest mass ratio. Examples of the (meth) acrylic acid ester include: the (meth) acrylate exemplified as the (meth) acrylate forming the acrylic resin as the thermoplastic resin. On the other hand, examples of the thermosetting functional group in the thermosetting functional group-containing acrylic resin include: glycidyl, carboxyl, hydroxyl, isocyanate, and the like. Among them, glycidyl group and carboxyl group are preferable. That is, as the acrylic resin having a thermosetting functional group, a glycidyl group-containing acrylic resin and a carboxyl group-containing acrylic resin are particularly preferable. Further, it is preferable to contain a curing agent together with the thermosetting functional group-containing acrylic resin. When the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group, a polyphenol compound is preferably used as the curing agent, and for example, the above-mentioned various phenol resins can be used.
In order to achieve a certain degree of crosslinking in the adhesive layer 20 before curing for die bonding, for example, a polyfunctional compound capable of reacting with and bonding to a functional group at a molecular chain end of the resin that can be contained in the adhesive layer 20 is preferably blended in advance as a crosslinking component in a composition (adhesive composition) forming the adhesive layer. Such a configuration is preferable from the viewpoint of improving the adhesion properties of the adhesive layer 20 at high temperatures and from the viewpoint of improving the heat resistance. Examples of the crosslinking component include: a polyisocyanate compound. Examples of the polyisocyanate compound include: tolylene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1, 5-naphthalene diisocyanate, an adduct of a polyol and a diisocyanate, and the like. The content of the crosslinking component in the adhesive resin composition is preferably 0.05 parts by mass or more per 100 parts by mass of the resin having the functional group capable of reacting with and bonding to the crosslinking component, from the viewpoint of improving the cohesive force of the adhesive layer 20 to be formed; from the viewpoint of improving the adhesion of the formed adhesive layer 20, it is preferably 7 parts by mass or less. In addition, as the crosslinking component, other polyfunctional compounds such as epoxy resin can be used in combination with the polyisocyanate compound.
The glass transition temperature of the acrylic resin and the acrylic resin containing a thermosetting functional group which can be blended in the adhesive layer 20 is preferably-40 to 10 ℃. As the glass transition temperature of the polymer, a glass transition temperature (theoretical value) obtained based on the following Fox equation can be used. The Fox equation is a relationship between the glass transition temperature Tg of a polymer and the glass transition temperature Tgi of a homopolymer of each constituent monomer in the polymer. In the following Fox formula, tg represents the glass transition temperature (. Degree. C.) of a polymer, wi represents the weight percentage of the monomer i constituting the polymer, and Tgi represents the glass transition temperature (. Degree. C.) of a homopolymer of the monomer i. As the glass transition temperature of the homopolymer, a literature value can be used, and for example, glass transition temperatures of various homopolymers are listed in "synthetic resin for paint of New Polymer library 7" (North okang Co., ltd., polymer society, 1995) "and" catalogue of acrylic acid esters (1997 edition) "(Mitsubishi Yang corporation). On the other hand, the glass transition temperature of a homopolymer of a monomer can also be determined by a method specifically described in Japanese patent laid-open No. 2007-51271.
Fox formula 1/(273 + Tg) = Σ [ Wi/(273 + Tgi) ]
The adhesive layer 20 contains the filler as described above. By adding a filler to adhesive layer 20, physical properties such as electrical conductivity, thermal conductivity, and elastic modulus of adhesive layer 20 can be adjusted. Examples of the filler include inorganic fillers and organic fillers, and inorganic fillers are particularly preferable. Examples of the inorganic filler include: aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum nitride, aluminum borate whisker, boron nitride, silica (crystalline silica, amorphous silica, etc.); and simple metal substances and alloys such as aluminum, gold, silver, copper, nickel and the like; amorphous carbon black, graphite, and the like. The filler may have various shapes such as a spherical shape, a needle shape, and a flake shape. The filler may be used alone or in combination of two or more. Among the above fillers, silica is preferable from the viewpoint of easy adjustment of the average particle diameter and easy improvement of storage stability compared with other fillers, and from the viewpoint of low cost and insulation properties.
The filler preferably has no radiation-curable carbon-carbon double bond (particularly, a radical polymerizable functional group) on the surface. When the filler has a radiation-curable carbon-carbon double bond on the surface, there is a possibility that the filler reacts with the polymer in the pressure-sensitive adhesive layer 12 by irradiation with radiation. Therefore, by using the filler having no radiation-curable carbon-carbon double bond on the surface, the storage stability is further improved. In addition, when a pickup step described later is performed after the radiation curing of the adhesive layer 12, the semiconductor chip 31 with the adhesive layer is more easily picked up from the adhesive layer 12 in the pickup step. As the filler having no radiation-curable carbon-carbon double bond on the surface, a filler which has not been subjected to surface treatment may be used.
The average particle diameter of the filler is preferably 70 to 300nm, more preferably 75 to 250nm. The average particle diameter is smaller than the average particle diameter of a filler generally used for cutting the adhesive layer in the die-bonding film. When a filler having an average particle diameter of 300nm or less is used as the filler, which is smaller than usual, the surface area of the filler in the adhesive layer is large, and it is estimated that the reaction accelerator is restricted by the filler, and the action of the reaction accelerator during storage can be suppressed, and the storage stability is more excellent. Further, when a filler having an average particle diameter of 70nm or more is used as the filler, it is presumed that the limitation of the curing accelerator by the filler becomes appropriate, the curability of the adhesive layer 20 is improved by maintaining the action of the curing accelerator, and the curing ratio of the adhesive layer 20 is likely to become larger by heating under a heating condition for a relatively short time. In addition, wettability and adhesiveness to an adherend such as a semiconductor wafer are further improved. The average particle diameter of the filler is determined as follows. The cured adhesive layer 20 was embedded in a resin to expose the cross section of the adhesive layer from the embedded resin, the cross section was subjected to ion thinning by a CP processing apparatus, then subjected to conductive treatment, observed by FE-SEM to obtain a reflection electron image, and the area of the filler in the obtained image was divided by the number of fillers in the image to determine the average area of the filler, which was taken as the average particle diameter of the filler. The filler is particularly preferably silica having an average particle diameter within the above range.
The content ratio of the filler in the adhesive layer 20 is preferably 3 to 60% by mass, and more preferably 20 to 50% by mass, based on the total mass of the adhesive layer 20. When the content ratio is 3% by mass or more, the adhesive layer 20 is easily cut off more favorably in the cooling and spreading step described later, and the semiconductor chip with the adhesive layer can be picked up more favorably in the pick-up step described later. When the content is 60% by mass or less, the adhesiveness to the pressure-sensitive adhesive layer 12 and the adhesiveness between semiconductor chips or between an adherend and a semiconductor chip become more favorable.
The adhesive layer 20 contains a curing accelerator as described above. By adding a curing accelerator to the adhesive layer 20, the curing reaction of the thermosetting component can be sufficiently advanced at the time of curing the adhesive layer 20, and the curing reaction rate can be increased. Examples of the curing accelerator include: imidazole compounds, triphenylphosphine compounds, amine compounds, trihaloborane compounds, and the like. Examples of the imidazole compound include: 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1, 2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2, 4-diamino-6- [2' -methylimidazolyl- (1 ') ] -ethyl-s-triazine, 2, 4-diamino-6- [2' -undecylimidazolyl- (1 ') ] -ethyl-s-triazine, 2, 4-diamino-6- [2' -ethyl-4 ' -methylimidazolyl- (1 ') ] -ethyl-s-triazine, 2, 4-diamino-6- [2' -methylimidazolyl- (1 ') ] -ethyl-s-triazine isocyanuric acid adduct, 2-phenyl-4, 5-dihydroxymethylimidazole, 2-phenyl-4-hydroxymethylimidazole, 2-hydroxymethyl-5-hydroxymethylimidazole, and the like. Examples of the triphenylphosphine-based compound include: triphenylphosphine, tris (p-methylphenyl) phosphine, tris (nonylphenyl) phosphine, diphenyltolylphosphine, tetraphenylphosphonium bromide, methyltriphenylphosphonium chloride, methoxymethyltriphenylphosphonium, benzyltriphenylphosphonium chloride, etc. The triphenylphosphine-based compound also includes a compound having both a triphenylphosphine structure and a triphenylborane structure. Examples of such compounds include: tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium tetra-p-tolylborate, benzyltriphenylphosphonium tetraphenylborate, triphenylphosphine and triphenylborane, and the like. Examples of the amine compound include: monoethanolamine trifluoroborate, dicyandiamide, and the like. Examples of the trihaloborane-based compound include trichloroborane and the like. The curing accelerator may be used alone or in combination of two or more.
The content of the curing accelerator in the adhesive layer 20 is preferably 0.15 to 10 parts by mass, and more preferably 0.2 to 3 parts by mass, with respect to 100 parts by mass of the thermosetting component. When the content is 0.15 parts by mass or more, the action of the curing accelerator can be more sufficiently exhibited, and the curing of the adhesive layer 20 is easily more largely performed by heating under a heating condition for a short time. When the content is 10 parts by mass or less, the storage stability is more excellent.
Adhesive layer 20 may contain other components as needed. Examples of the other components include: flame retardants, silane coupling agents, ion trapping agents, dyes, and the like. Examples of the flame retardant include: antimony trioxide, antimony pentoxide, brominated epoxy resins, and the like. Examples of the silane coupling agent include: beta- (3, 4-epoxycyclohexyl) ethyltrimethoxysilane, gamma-glycidoxypropyltrimethoxysilane, gamma-glycidoxypropylmethyldiethoxysilane, etc. Examples of the ion scavenger include: hydrotalcite compounds, bismuth hydroxide, antimony oxide hydrate (for example, "IXE-300" manufactured by east asian synthesis corporation), zirconium phosphate having a specific structure (for example, "IXE-100" manufactured by east asian synthesis corporation), magnesium silicate (for example, "Kyoward 600" manufactured by synechiae chemical industry co., ltd.), aluminum silicate (for example, "Kyoward 700" manufactured by synechiae chemical industry co., ltd.), and the like. As the ion scavenger, a compound capable of forming a complex with a metal ion may also be used. Examples of such compounds include: triazole compounds, tetrazole compounds, and bipyridine compounds. Among these, from the viewpoint of stability of a complex formed with a metal ion, a triazole-based compound is preferable. Examples of such triazole compounds include: 1,2, 3-benzotriazole, 1- { N, N-bis (2-ethylhexyl) aminomethyl } benzotriazole, carboxybenzotriazole, 2- (2-hydroxy-5-methylphenyl) benzotriazole, 2- (2-hydroxy-3, 5-di-tert-butylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3-tert-butyl-5-methylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3, 5-di-tert-pentylphenyl) benzotriazole, 2- (2-hydroxy-5-tert-octylphenyl) benzotriazole, 6- (2-benzotriazolyl) -4-tert-octyl-6 ' -tert-butyl-4 ' -methyl-2, 2' -methylenebisphenol, 1- (2 ',3' -hydroxypropyl) benzotriazole, 1- (1, 2-dicarboxydiethyl) benzotriazole, 1- (2-ethylhexylaminomethyl) benzotriazole, 2, 4-di-tert-amyl-6- { (H-benzotriazol-1-yl) methyl } phenol, 2- (2-hydroxy-5-tert-butylphenyl) -2- [ 2H-tert-butylphenyl ] -3-tert-butylphenyl ] -5-butylphenyl ] benzotriazole, 2- (2-tert-butylphenyl) -5-butylphenyl) 2H-tert-butyl-4-2, 2-4-cyclohexylphenyl ] benzotriazole, 2, 4-tert-butyl-4-2, 2-4-tolyltriazole, and the like, 2- (2H-benzotriazol-2-yl) -6- (1-methyl-1-phenylethyl) -4- (1, 3-tetramethylbutyl) phenol, 2- (2H-benzotriazol-2-yl) -4-tert-butylphenol, 2- (2-hydroxy-5-methylphenyl) benzotriazole, 2- (2-hydroxy-5-tert-octylphenyl) -benzotriazole, 2- (3-tert-butyl-2-hydroxy-5-methylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3, 5-di-tert-amylphenyl) benzotriazole, 2- (2-hydroxy-3, 5-di-tert-butylphenyl) -5-chloro-benzotriazole, 2- [ 2-hydroxy-3, 5-bis (1, 1-dimethylbenzyl) phenyl ] -2H-benzotriazole, 2' -methylenebis [6- (2H-benzotriazol-2-yl) -4- (1, 3-tetramethylbutyl) phenol ], 2- [ 2-hydroxy-3, 5-bis (. Alpha.,. Alpha. -dimethylbenzyl) phenyl ] -2H-benzotriazole, methyl 3- [3- (2H-benzotriazol-2-yl) -5-tert-butyl-4-hydroxyphenyl ] propionate, and the like. In addition, as the ion scavenger, a specific hydroxyl group-containing compound such as hydroquinone compound, hydroxyanthraquinone compound, polyphenol compound, etc. may be used. Specific examples of such a hydroxyl group-containing compound include: 1, 2-benzenediol, alizarin, 1, 5-dihydroxy anthraquinone, tannic acid, gallic acid, methyl gallate, pyrogallol and the like. The other additives may be used alone or in combination of two or more.
The thickness of the adhesive layer 20 (total thickness in the case of a laminate) is not particularly limited, and is, for example, 1 to 200 μm. The upper limit is preferably 100. Mu.m, more preferably 80 μm. The lower limit is preferably 3 μm, more preferably 5 μm.
The amount of heat generated from adhesive layer 20 after heating at 130 ℃ for 30 minutes as described above, as measured by DSC, is 60% or less of the amount of heat generated before heating. That is, [ calorific value (J/g) measured by DSC after heating at 130 ℃ for 30 minutes/calorific value (J/g) × 100 before heating ] (%) is 60% or less. This means that 60% or more of the uncured thermosetting component in the adhesive layer before heating is cured by heating at 130 ℃ for 30 minutes. By providing the adhesive layer in the dicing die-bonding film of the present invention with the above configuration, the adhesive layer is cured in a short time because the curing ratio of the adhesive layer is large by heating under a heating condition for a short time, and the storage modulus can be improved in a short time. Further, since the curing ratio of the adhesive layer is large by heating under a heating condition for a short time, curing is not likely to occur until heating during storage, that is, storage stability is excellent. The calorific value measured by DSC after heating at 130 ℃ for 30 minutes is preferably 50% or less, more preferably 40% or less of the calorific value before heating. The lower limit may be 0% or 10%.
The amount of heat generated by DSC measurement of the adhesive layer 20 before heating is preferably 20 to 500J/g, more preferably 50 to 300J/g. When the amount of heat generation is 20J/g or more, curing of the adhesive layer 20 can be more significantly performed by heating under a heating condition for a short period of time. When the amount of heat generation is 500J/g or less, the adhesive force of the surface of adhesive layer 20 can be secured to some extent, and the adhesiveness to the semiconductor wafer and the semiconductor chip is excellent in the use of the dicing die-bonding film.
The heat generation amount of adhesive layer 20 measured by DSC after heating at 130 ℃ for 30 minutes is preferably 5 to 60J/g, more preferably 10 to 50J/g. When the amount of heat generation is 5J/g or more, the resin can be cured together with the sealing resin in the sealing step after the wire bonding step. When the amount of heat generation is 60J/g or less, curing of the adhesive layer 20 can be more greatly progressed by heating under a heating condition for a short time.
The heat generation amount measured by DSC is the total heat generation amount [ J/g ] when the adhesive layer 20 is heated from 0 ℃ to 350 ℃ at a heating rate of 10 ℃/min using a differential scanning calorimetry measuring apparatus. The mass of the adhesive layer 20 used in the DSC measurement is, for example, 10 to 15mg.
The amount of heat generated before heating and the amount of heat generated after heating at 130 ℃ for 30 minutes as measured by DSC can be controlled by the proportion of the thermosetting component in the adhesive layer 20, the amount of the curing accelerator, the proportion of the filler, the particle size, and the like. Specifically, the larger the proportion of the thermosetting component, the larger the amount of heat generated before heating tends to be. The larger the amount of the curing accelerator is, the larger the range of progress of curing in a shorter time becomes, and therefore, the heat generation amount after heating at 130 ℃ for 30 minutes tends to become smaller. It is presumed that the smaller the proportion of the filler or the larger the particle diameter of the filler, the smaller the amount of the restricted curing accelerator, the larger the range of progress of curing in a short time, and the smaller the amount of heat generation after heating at 130 ℃ for 30 minutes.
As described above, the adhesive layer 20 has a storage modulus at 130 ℃ after heating of 20MPa to 4000 MPa. When the storage modulus after heating is 20MPa or more, the adhesive layer can be cured in a short time and has a certain degree of hardness after curing, and therefore, appropriate wire bonding can be performed after curing. In particular, when the adhesive layer is used in a multi-stage stacked semiconductor device having a suspended portion, vibration due to ultrasonic waves or shaking of the suspended portion due to a load applied to the suspended portion during wire bonding can be suppressed, and appropriate wire bonding to the suspended portion can be performed. Further, by setting the storage modulus after heating to 4000MPa or less, the adhesion reliability to an adherend and the adhesion reliability between semiconductor chips after curing are also excellent. The upper limit of the storage modulus may be 2000MPa, 1000MPa, or 500MPa.
The storage modulus is a dynamic storage modulus at 130 ℃ measured in a tensile mode under the conditions of a frequency of 1Hz, a distance between the jigs of 10mm, and a strain of 0.1% using a viscoelasticity measuring apparatus.
The storage modulus can be controlled by the proportion of the thermosetting component, the proportion of the thermoplastic resin, the amount of the curing accelerator, the proportion of the filler, and the like in the adhesive layer 20. Specifically, the adhesive layer 20 after heating tends to be harder as the proportion of the thermosetting component, the amount of the curing accelerator, and the proportion of the filler are increased. On the other hand, the larger the proportion of the thermoplastic resin, the softer the adhesive layer 20 after heating, and therefore the storage modulus tends to decrease.
The viscosity of the adhesive layer 20 at 90 ℃ is preferably 300 to 100000 pas. In the multi-stage stacked semiconductor device, since the number of circuit layers is generally large, the semiconductor chip is likely to be warped greatly, and thus the semiconductor chip tends to be easily peeled off. However, when the viscosity of the adhesive layer 20 at 90 ℃ is 300Pa · s or more, even if the viscosity is reduced by heat from the die bonding stage when die bonding a semiconductor chip which is relatively easy to warp, the semiconductor chip is less likely to peel off when the semiconductor chip warps. When the viscosity is 100000Pa · s or less, the adhesion reliability to an adherend and the adhesion reliability between semiconductor chips after curing are also excellent. The viscosity is preferably 500 to 50000 pas, more preferably 1000 to 40000 pas. The viscosity of adhesive layer 20 at 90 ℃ after storage at 23 ℃ for 28 days is preferably within the above range. The viscosity was measured by a rotary viscometer under the conditions of a gap of 100 μm, a rotor plate diameter of 8mm, a temperature rise rate of 10 ℃/min, a strain of 10%, and a frequency of 5rad/sec.
The rate of increase in viscosity at 90 ℃ (viscosity increase rate) [ { viscosity at 90 ℃ (Pa · s) after storage at 23 ℃ for 28 days — viscosity at 90 ℃ (Pa · s) }/viscosity at 90 ℃ (Pa · s) × 100] (%) after storage at 23 ℃ for 28 days is preferably less than 150%, more preferably less than 100%. When the increase rate of the viscosity is less than 150%, the storage stability is more excellent. The lower limit of the viscosity increase rate may be 0%.
(substrate)
The base material 11 in the dicing tape 10 is an element that functions as a support in the dicing tape 10 and the dicing die-bonding film 1. Examples of the substrate 11 include a plastic substrate (particularly, a plastic film). The substrate 11 may be a single layer, or may be a laminate of the same type of substrate or different types of substrates.
Examples of the resin constituting the plastic substrate include: polyolefin resins such as low-density polyethylene, linear low-density polyethylene, medium-density polyethylene, high-density polyethylene, ultra-low-density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homo-polypropylene, polybutene, polymethylpentene, ethylene-vinyl acetate copolymer (EVA), ionomer, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene-butene copolymer, and ethylene-hexene copolymer; a polyurethane; polyesters such as polyethylene terephthalate (PET), polyethylene naphthalate, and polybutylene terephthalate (PBT); a polycarbonate; a polyimide; polyether ether ketone; a polyetherimide; polyamides such as aromatic polyamides and wholly aromatic polyamides; polyphenylene sulfide; a fluororesin; polyvinyl chloride; polyvinylidene chloride; a cellulose resin; silicone resins, and the like. The base material 11 preferably contains an ethylene-vinyl acetate copolymer as a main component from the viewpoint of ensuring good heat shrinkability of the base material 11 and easily maintaining the chip pitch distance by local heat shrinkage of the dicing tape 10 or the base material 11 in a normal temperature expanding step described later. The main component of the substrate 11 is a component occupying the largest mass ratio among the constituent components. The resin may be used alone or in combination of two or more. When the pressure-sensitive adhesive layer 12 is a radiation-curable pressure-sensitive adhesive layer as described later, the substrate 11 preferably has radiation transparency.
When the substrate 11 is a plastic film, the plastic film may be non-oriented or oriented in at least one direction (an axial direction, a biaxial direction, or the like). The plastic film is capable of heat shrinking in at least one direction when oriented in the at least one direction. When the dicing tape 10 has heat shrinkability, the outer peripheral portion of the semiconductor wafer of the dicing tape 10 can be heat shrunk, whereby the semiconductor chips with the adhesive layer after singulation can be fixed in a state where the interval between the semiconductor chips is widened, and therefore the semiconductor chips can be easily picked up. In order to impart isotropic heat shrinkability to the base material 11 and the dicing tape 10, the base material 11 is preferably a biaxially oriented film. The plastic film oriented in at least one direction may be obtained by stretching a non-stretched plastic film in at least one direction (uniaxial stretching, biaxial stretching, or the like). The heat shrinkage ratio of the base material 11 and the dicing tape 10 in a heat treatment test performed under conditions of a heating temperature of 100 ℃ and a heating time of 60 seconds is preferably 1 to 30%, more preferably 2 to 25%, even more preferably 3 to 20%, and particularly preferably 5 to 20%. The heat shrinkage ratio is preferably a heat shrinkage ratio in at least one of the MD direction and the TD direction.
For the purpose of improving adhesion to the pressure-sensitive adhesive layer 12, holding properties, and the like, the pressure-sensitive adhesive layer 12-side surface of the base material 11 may be subjected to physical treatment such as corona discharge treatment, plasma treatment, sanding treatment, ozone exposure treatment, flame exposure treatment, high-voltage shock exposure treatment, ionizing radiation treatment, or the like; chemical treatments such as chromic acid treatment; surface treatment such as easy adhesion treatment with a coating agent (primer). In addition, in order to impart antistatic ability, a conductive vapor deposition layer containing a metal, an alloy, an oxide thereof, or the like may be provided on the surface of the base material 11. The surface treatment for improving the adhesion is preferably performed on the entire surface of the substrate 11 on the pressure-sensitive adhesive layer 12 side.
From the viewpoint of ensuring the strength with which the base material 11 functions as a support for the dicing tape 10 and the dicing die-bonding film 1, the thickness of the base material 11 is preferably 40 μm or more, more preferably 50 μm or more, still more preferably 55 μm or more, and particularly preferably 60 μm or more. From the viewpoint of achieving appropriate flexibility of the dicing tape 10 and the dicing die-bonding film 1, the thickness of the base material 11 is preferably 200 μm or less, more preferably 180 μm or less, and even more preferably 150 μm or less.
(adhesive layer)
The pressure-sensitive adhesive layer 12 in the dicing die-bonding film 1 may be a pressure-sensitive adhesive layer (pressure-sensitive adhesive layer of which adhesive force can be decreased) in which the adhesive force can be intentionally decreased by an external action during the use of the dicing die-bonding film 1, or a pressure-sensitive adhesive layer (pressure-sensitive adhesive layer of which adhesive force is not decreased) in which the adhesive force is hardly or not decreased by an external action during the use of the dicing die-bonding film 1, and may be appropriately selected depending on the method, conditions, and the like for singulating the semiconductor wafer which is singulated using the dicing die-bonding film 1.
When the adhesive layer 12 is an adhesive force-reducible adhesive layer, it is possible to distinguish between a state in which the adhesive layer 12 exhibits a relatively high adhesive force and a state in which the adhesive layer exhibits a relatively low adhesive force during the manufacturing process and the using process of the dicing die-bonding film 1. For example, in the production process of the dicing die-bonding film 1, when the adhesive layer 20 is bonded to the adhesive layer 12 of the dicing tape 10, the state in which the adhesive layer 12 exhibits relatively high adhesive force when the dicing die-bonding film 1 is used in the dicing step can suppress or prevent the adherend such as the adhesive layer 20 from floating from the adhesive layer 12, while in the subsequent pick-up step for picking up the semiconductor chip with the adhesive layer from the dicing tape 10 of the dicing die-bonding film 1, pick-up can be easily performed by reducing the adhesive force of the adhesive layer 12.
Examples of the adhesive for forming such an adhesive layer having a reduced adhesive strength include: radiation-curable adhesives, heat-expandable adhesives, and the like. As the adhesive for forming the adhesive layer having a reduced adhesive strength, one adhesive may be used, or two or more adhesives may be used.
As the radiation curable adhesive, for example, an adhesive of a type that is cured by irradiation with electron beam, ultraviolet ray, α -ray, β -ray, γ -ray, or X-ray can be used, and an adhesive of a type that is cured by irradiation with ultraviolet ray (ultraviolet curable adhesive) is particularly preferably used.
Examples of the radiation curable adhesive include: an addition type radiation curing adhesive containing a base polymer such as an acrylic polymer, and a radiation polymerizable monomer component and oligomer component having a functional group such as a radiation polymerizable carbon-carbon double bond.
The acrylic polymer is a polymer containing a constituent unit derived from an acrylic monomer (monomer component having a (meth) acryloyl group in the molecule) as a constituent unit of the polymer. The acrylic polymer is preferably a polymer having the largest content of constituent units derived from a (meth) acrylate ester in terms of mass ratio. The acrylic polymer may be used alone or in combination of two or more.
Examples of the (meth) acrylate include a hydrocarbon group-containing (meth) acrylate. Examples of the hydrocarbon group-containing (meth) acrylate include those exemplified as a constituent unit of an acrylic resin which is a thermoplastic resin that can be contained in the adhesive layer 20. The hydrocarbon group-containing (meth) acrylate may be used alone or in combination of two or more. In order to suitably exhibit basic characteristics such as adhesiveness by the hydrocarbon group-containing (meth) acrylate, the proportion of the hydrocarbon group-containing (meth) acrylate in the entire monomer components for forming the acrylic polymer is preferably 40 mass% or more, and more preferably 60 mass% or more.
The acrylic polymer may contain a constituent unit derived from another monomer component copolymerizable with the hydrocarbon group-containing (meth) acrylate for the purpose of improving cohesive force, heat resistance, and the like. Examples of the other monomer component include those exemplified as a constituent unit of an acrylic resin which is a thermoplastic resin that can be contained in the adhesive layer 20. The other monomer components may be used alone or in combination of two or more. In order to make the pressure-sensitive adhesive layer 12 suitably exhibit basic characteristics such as adhesiveness due to the hydrocarbon group-containing (meth) acrylate, the total proportion of the other monomer components is preferably 60% by mass or less, and more preferably 40% by mass or less, of the total monomer components used to form the acrylic polymer.
The acrylic polymer may contain a constituent unit derived from a polyfunctional monomer copolymerizable with a monomer component forming the acrylic polymer in order to form a crosslinked structure in the polymer skeleton. Examples of the polyfunctional monomer include: examples of the monomer include monomers having a (meth) acryloyl group and another reactive functional group in the molecule, such as hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate (for example, polyglycidyl (meth) acrylate), polyester (meth) acrylate, and urethane (meth) acrylate. The polyfunctional monomer may be used alone or in combination of two or more. In order to suitably exhibit basic characteristics such as adhesiveness by the hydrocarbon group-containing (meth) acrylate, the proportion of the polyfunctional monomer in the entire monomer components for forming the acrylic polymer is preferably 40% by mass or less, and more preferably 30% by mass or less.
The acrylic polymer can be obtained by subjecting one or more monomer components including an acrylic monomer to polymerization. Examples of the polymerization method include solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization.
The mass average molecular weight of the acrylic polymer is preferably 10 ten thousand or more, and more preferably 20 to 300 ten thousand. When the mass average molecular weight is 10 ten thousand or more, the low molecular weight substance in the pressure-sensitive adhesive layer tends to be small, and contamination of the pressure-sensitive adhesive layer, the semiconductor wafer, and the like can be further suppressed.
The adhesive layer 12 or the adhesive forming the adhesive layer 12 may contain a crosslinking agent. For example, when an acrylic polymer is used as the base polymer, the acrylic polymer can be crosslinked, further reducing the low molecular weight substance in the adhesive layer 12. In addition, the mass average molecular weight of the acrylic polymer can be increased. Examples of the crosslinking agent include: polyisocyanate compounds, epoxy compounds, polyol compounds (such as polyphenol compounds), aziridine compounds, melamine compounds, and the like. When the crosslinking agent is used, the amount thereof is preferably about 5 parts by mass or less, more preferably 0.1 to 5 parts by mass, per 100 parts by mass of the base polymer.
Examples of the radiation-polymerizable monomer component include: urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1, 4-butanediol di (meth) acrylate, and the like. Examples of the radiation-polymerizable oligomer component include: various oligomers such as urethanes, polyethers, polyesters, polycarbonates, and polybutadienes, and preferably oligomers having a molecular weight of about 100 to 30000. In the radiation-curable pressure-sensitive adhesive forming the pressure-sensitive adhesive layer 12, the content of the radiation-curable monomer component and oligomer component is, for example, 5 to 500 parts by mass, preferably about 40 to 150 parts by mass, relative to 100 parts by mass of the base polymer. As the additive type radiation curable adhesive, for example, an additive type radiation curable adhesive disclosed in Japanese patent application laid-open No. Sho 60-196956 can be used.
Examples of the radiation curable adhesive include: an internal radiation-curable adhesive containing a base polymer having a functional group such as a radiation-polymerizable carbon-carbon double bond at a polymer side chain, a polymer main chain, or a polymer main chain end. When such an internal radiation curable adhesive is used, the following tendency is exhibited: it is possible to suppress an undesirable change in the adhesive properties with time due to the movement of the low-molecular weight component in the formed adhesive layer 12.
The base polymer contained in the internal radiation curable pressure-sensitive adhesive is preferably an acrylic polymer. Examples of the method for introducing a radiation-polymerizable carbon-carbon double bond into an acrylic polymer include the following methods: after an acrylic polymer is obtained by polymerizing (copolymerizing) a raw material monomer containing a monomer component having a 1 st functional group, a compound having a 2 nd functional group capable of reacting with the 1 st functional group and a radiation-polymerizable carbon-carbon double bond is subjected to a condensation reaction or an addition reaction with the acrylic polymer while maintaining the radiation-polymerizability of the carbon-carbon double bond.
Examples of the combination of the 1 st functional group and the 2 nd functional group include: carboxyl and epoxy, epoxy and carboxyl, carboxyl and aziridinyl, aziridinyl and carboxyl, hydroxyl and isocyanate, isocyanate and hydroxyl, and the like. Among these, from the viewpoint of following the easiness of the reaction, a combination of a hydroxyl group and an isocyanate group, and a combination of an isocyanate group and a hydroxyl group are preferable. Among them, from the viewpoint of high technical difficulty in producing a polymer having an isocyanate group with high reactivity and easiness in producing and starting an acrylic polymer having a hydroxyl group, a combination in which the 1 st functional group is a hydroxyl group and the 2 nd functional group is an isocyanate group is preferable. Examples of the compound having an isocyanate group and a radiation-polymerizable carbon-carbon double bond, that is, the isocyanate compound having a radiation-polymerizable unsaturated functional group include: methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl- α, α -dimethylbenzyl isocyanate, and the like. Examples of the acrylic polymer having a hydroxyl group include acrylic polymers containing constituent units derived from the above-mentioned hydroxyl group-containing monomer and ether compounds such as 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether and diethylene glycol monovinyl ether.
The radiation curable adhesive preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include: alpha-ketol compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, thioxanthone compounds, camphorquinone, halogenated ketones, acyl phosphine oxides, acyl phosphonate esters, and the like. Examples of the α -ketols include: 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α -hydroxy- α, α' -dimethylacetophenone, 2-methyl-2-hydroxypropiophenone, 1-hydroxycyclohexyl phenyl ketone and the like. Examples of the acetophenone compounds include: methoxyacetophenone, 2-dimethoxy-2-phenylacetophenone, 2-diethoxyacetophenone, 2-methyl-1- [4- (methylthio) -phenyl ] -2-morpholinopropane-1 and the like. Examples of the benzoin ether compound include: benzoin ethyl ether, benzoin isopropyl ether, anisoin methyl ether, and the like. Examples of the ketal compounds include: benzildimethylketal, and the like. Examples of the aromatic sulfonyl chloride-based compound include: 2-naphthalenesulfonyl chloride, and the like. Examples of the photoactive oxime compounds include: 1-phenyl-1, 2-propanedione-2- (O-ethoxycarbonyl) oxime, and the like. Examples of the benzophenone compound include: benzophenone, benzoylbenzoic acid, 3' -dimethyl-4-methoxybenzophenone and the like. Examples of the thioxanthone compound include: thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2, 4-dimethylthioxanthone, isopropylthioxanthone, 2, 4-dichlorothioxanthone, 2, 4-diethylthioxanthone, 2, 4-diisopropylthioxanthone, and the like. The content of the photopolymerization initiator in the radiation curable adhesive is, for example, 0.05 to 20 parts by mass per 100 parts by mass of the base polymer.
The heat-expandable adhesive is an adhesive containing a component (a foaming agent, heat-expandable microspheres, or the like) which expands and expands by heating. Examples of the blowing agent include various inorganic blowing agents and organic blowing agents. Examples of the inorganic foaming agent include: ammonium carbonate, ammonium bicarbonate, sodium bicarbonate, ammonium nitrite, sodium borohydride, azides, and the like. Examples of the organic foaming agent include: chlorofluoroalkanes such as trichlorofluoromethane and dichlorofluoromethane; azo compounds such as azobisisobutyronitrile, azodicarbonamide, and barium azodicarboxylate; hydrazine compounds such as p-toluenesulfonyl hydrazide, diphenylsulfone-3, 3 '-disulfonyl hydrazide, 4' -oxybis-benzenesulfonyl hydrazide and allyldisulfonyl hydrazide; semicarbazide compounds such as p-toluenesulfonyl semicarbazide and 4,4' -oxybis (benzenesulfonyl semicarbazide); triazole compounds such as 5-morpholino-1, 2,3, 4-thiatriazole; and N-nitroso compounds such as N, N ' -dinitrosopentamethylenetetramine and N, N ' -dimethyl-N, N ' -dinitrosoterephthalamide. Examples of the thermally expandable microspheres include microspheres in which a substance that is easily vaporized and expanded by heating is contained in a shell. Examples of the substance which is easily vaporized and expanded by heating include: isobutane, propane, pentane, etc. The heat-expandable microspheres can be produced by encapsulating a substance that is easily vaporized and expanded by heating in a shell-forming substance by an agglomeration method, an interfacial polymerization method, or the like. As the shell-forming substance, a substance exhibiting thermal fusion properties or a substance which can be broken by the thermal expansion effect of the encapsulated substance can be used. Examples of such a substance include: vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, polysulfone, and the like.
Examples of the non-reduced adhesive force pressure-sensitive adhesive layer include pressure-sensitive adhesive layers. The pressure-sensitive adhesive layer includes an adhesive layer having the following configuration: the pressure-sensitive adhesive layer formed of the radiation-curable pressure-sensitive adhesive described in the adhesion-reducing pressure-sensitive adhesive layer is cured in advance by irradiation with radiation and still has a certain adhesion. As the adhesive for forming the non-adhesive-force-reducing adhesive layer, one kind of adhesive may be used, or two or more kinds of adhesives may be used. The entire pressure-sensitive adhesive layer 12 may be a non-adhesive-force-reducing pressure-sensitive adhesive layer, or a part thereof may be a non-adhesive-force-reducing pressure-sensitive adhesive layer. For example, when the pressure-sensitive adhesive layer 12 has a single-layer structure, the pressure-sensitive adhesive layer 12 may be a non-adhesive-force-reducing pressure-sensitive adhesive layer as a whole, or a pressure-sensitive adhesive layer in which a specific portion (for example, a region located outside a central region as a region to be bonded of a ring frame) of the pressure-sensitive adhesive layer 12 is a non-adhesive-force-reducing pressure-sensitive adhesive layer, and an adhesive force is reducible in another portion (for example, a central region as a region to be bonded of a semiconductor wafer). When the pressure-sensitive adhesive layer 12 has a laminated structure, all of the pressure-sensitive adhesive layers in the laminated structure may be non-adhesive-force-reducing pressure-sensitive adhesive layers, or some of the pressure-sensitive adhesive layers in the laminated structure may be non-adhesive-force-reducing pressure-sensitive adhesive layers.
The pressure-sensitive adhesive layer (radiation-curable pressure-sensitive adhesive layer after irradiation with radiation) in the form in which the pressure-sensitive adhesive layer formed of a radiation-curable pressure-sensitive adhesive (radiation-curable pressure-sensitive adhesive layer not irradiated with radiation) is cured in advance by irradiation with radiation has a reduced adhesive force due to irradiation with radiation, but exhibits adhesive properties due to the contained polymer component, and can exhibit the minimum adhesive force required for the pressure-sensitive adhesive layer of the dicing tape in a dicing step or the like. When a radiation-curable pressure-sensitive adhesive layer that has been irradiated with radiation is used, the entire pressure-sensitive adhesive layer 12 may be a radiation-curable pressure-sensitive adhesive layer that has been irradiated with radiation in the plane extending direction of the pressure-sensitive adhesive layer 12, or a radiation-curable pressure-sensitive adhesive layer that has been irradiated with radiation in a part of the pressure-sensitive adhesive layer 12 and has not been irradiated with radiation in the other part. In the present specification, the "radiation curing type pressure-sensitive adhesive layer" refers to a pressure-sensitive adhesive layer formed from a radiation curing pressure-sensitive adhesive, and includes both a radiation curing type pressure-sensitive adhesive layer having radiation curability and not irradiated with radiation and a radiation curing type pressure-sensitive adhesive layer cured by irradiation of radiation with the pressure-sensitive adhesive layer.
As the pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer, a known or conventional pressure-sensitive adhesive can be used, and an acrylic adhesive or a rubber adhesive containing an acrylic polymer as a base polymer can be preferably used. When the pressure-sensitive adhesive layer 12 contains an acrylic polymer as the pressure-sensitive adhesive, the acrylic polymer preferably contains a polymer having a constituent unit derived from a (meth) acrylate as a constituent unit in the largest proportion by mass. As the acrylic polymer, for example, the acrylic polymer described as an acrylic polymer that can be contained in the additive type radiation curable pressure-sensitive adhesive can be used.
The pressure-sensitive adhesive layer 12 or the pressure-sensitive adhesive forming the pressure-sensitive adhesive layer 12 may contain, in addition to the above-mentioned components, known or conventional additives used in pressure-sensitive adhesive layers, such as a crosslinking accelerator, a tackifier, an antioxidant, and a colorant (a pigment, a dye, etc.). Examples of the colorant include compounds that are colored by irradiation with radiation. When the coloring agent contains a compound which is colored by irradiation with radiation, only a portion irradiated with radiation can be colored. The compound which is colored by irradiation with radiation is colorless or pale before irradiation with radiation and becomes colored by irradiation with radiation, and examples thereof include leuco dyes and the like. The amount of the compound which is colored by irradiation with radiation is not particularly limited and can be selected as appropriate.
The thickness of the pressure-sensitive adhesive layer 12 is not particularly limited, and when the pressure-sensitive adhesive layer 12 is a pressure-sensitive adhesive layer formed of a radiation-curable pressure-sensitive adhesive, from the viewpoint of obtaining a balance between the adhesive strength of the pressure-sensitive adhesive layer 12 to the adhesive layer 20 before and after radiation curing, the thickness is preferably about 1 to 50 μm, more preferably 2 to 30 μm, and still more preferably 5 to 25 μm.
The dicing die-bonding film 1 may have a separator. Specifically, the dicing die-bonding film 1 may have a sheet-like shape having a separator, or the separator may have a long shape, and a plurality of dicing die-bonding films 1 may be arranged thereon and wound into a roll. The separator is an element for covering and protecting the surface of the adhesive layer 20 of the dicing die-bonding film 1, and is peeled from the dicing die-bonding film 1 when the film is used. Examples of the separator include: polyethylene terephthalate (PET) film, polyethylene film, polypropylene film, plastic film or paper coated with a release agent such as a fluorine-based release agent or an acrylic long-chain alkyl ester-based release agent. The thickness of the separator is, for example, 5 to 200 μm.
The dicing die-bonding film 1 as one embodiment of the dicing die-bonding film of the present invention is manufactured, for example, as follows. First, the substrate 11 can be formed by a known or commonly used film forming method. Examples of the film forming method include: a calendering film-forming method, a casting method in an organic solvent, a inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, a dry lamination method, and the like.
Next, a composition (adhesive composition) for forming an adhesive layer, including an adhesive and a solvent for forming the adhesive layer 12, is applied to the substrate 11 to form a coating film, and then the coating film is cured by desolvation, curing, or the like as necessary, thereby forming the adhesive layer 12. Examples of the coating method include: known or commonly used coating methods such as roll coating, screen coating, gravure coating, and the like. The solvent removal is carried out, for example, at a temperature of 80 to 150 ℃ for 0.5 to 5 minutes. Alternatively, the pressure-sensitive adhesive layer 12 may be formed by applying the pressure-sensitive adhesive composition to the separator to form a coating film, and then curing the coating film under the above-described desolvation conditions. Then, the adhesive layer 12 is bonded to the substrate 11 together with the separator. In the above manner, the dicing tape 10 can be produced.
First, a composition (adhesive composition) for forming the adhesive layer 20, which contains a thermosetting component, a filler, a curing accelerator, a solvent, and the like, is prepared for the adhesive layer 20. Then, the adhesive composition is applied to the separator to form a coating film, and the coating film is cured by desolvation, curing, or the like as necessary to form the adhesive layer 20. The coating method is not particularly limited, and examples thereof include: known or commonly used coating methods such as roll coating, screen coating, gravure coating, and the like. The solvent removal is carried out, for example, at a temperature of 70 to 160 ℃ for 1 to 5 minutes.
Next, the separator is peeled from each of the dicing tape 10 and the adhesive layer 20, and the adhesive layer 20 and the pressure-sensitive adhesive layer 12 are bonded to each other so as to form a bonding surface. The bonding may be performed by, for example, crimping. In this case, the laminating temperature is not particularly limited, and is, for example, preferably 30 to 50 ℃ and more preferably 35 to 45 ℃. The linear pressure is not particularly limited, but is, for example, preferably 0.1 to 20kgf/cm, more preferably 1 to 10kgf/cm.
As described above, when the pressure-sensitive adhesive layer 12 is a radiation-curable pressure-sensitive adhesive layer, the pressure-sensitive adhesive layer 12 is irradiated with radiation such as ultraviolet light after the bonding of the pressure-sensitive adhesive layer 20, the pressure-sensitive adhesive layer 12 is irradiated with radiation from, for example, the base material 11 side, and the irradiation amount is, for example, 50 to 500mJ, preferably 100 to 300mJ. The region (irradiation region R) of the dicing die-bonding film 1 to which irradiation as a measure for reducing the adhesive strength of the adhesive layer 12 is performed is usually a region other than the peripheral edge portion of the bonding region of the adhesive layer 20 in the adhesive layer 12. When the irradiation region R is locally provided, the irradiation region R may be provided through a photomask on which a pattern corresponding to a region other than the irradiation region R is formed. Further, a method of forming the irradiation region R by irradiating the irradiation region R with radiation in a spot shape may be mentioned.
In this manner, for example, the dicing die-bonding film 1 shown in fig. 1 can be produced.
The dicing die-bonding film 1 can be used for the manufacture of semiconductor devices. Specifically, the method is described in the method for manufacturing a semiconductor device described later. The adhesive layer 20 in the dicing die-bonding film 1 is mounted on the manufactured semiconductor device. Specifically, the adhesive is preferably used for the purpose of bonding an adherend and semiconductor chips and/or the purpose of bonding semiconductor chips to each other, and more preferably used for the purpose of bonding an adherend and semiconductor chips and/or the purpose of bonding semiconductor chips to each other in a semiconductor device (multi-stage stacked semiconductor device) in which multi-stage semiconductor chips are stacked as shown in fig. 7 (b 1), 7 (b 2), and 7 (c). The adhesive layer 20 is particularly preferably used at least for a suspended portion in a multi-stage stacked semiconductor device having a suspended portion as shown in fig. 7 (b 1), 7 (b 2), and 7 (c).
[ method for manufacturing semiconductor device ]
The dicing die-bonding film of the present invention can be used to manufacture a semiconductor device. Specifically, the semiconductor device can be manufactured by a manufacturing method including the steps of: a step of bonding a semiconductor wafer divided body including a plurality of semiconductor chips or a semiconductor wafer capable of being singulated into a plurality of semiconductor chips to the adhesive layer side in the dicing die-bonding film of the invention (which may be referred to as "step a"); a step of spreading the dicing tape in the dicing die-bonding film of the invention under a relatively low temperature condition to cleave at least the adhesive layer to obtain a semiconductor chip with an adhesive layer (sometimes referred to as "step B"); a step (sometimes referred to as "step C") of expanding the dicing tape under a relatively high temperature condition to widen the interval between the semiconductor chips with the adhesive layer; and a step of picking up the semiconductor chip with the adhesive layer (sometimes referred to as "step D").
The divided body of the semiconductor wafer including the plurality of semiconductor chips or the semiconductor wafer capable of being singulated into the plurality of semiconductor chips used in the step a can be obtained as follows. First, as shown in fig. 2 (a) and 2 (b), a dividing groove 30a is formed in the semiconductor wafer W (dividing groove forming step). The semiconductor wafer W has a 1 st surface Wa and a 2 nd surface Wb. Various semiconductor elements (not shown) are already mounted on the 1 st surface Wa side of the semiconductor wafer W, and wiring structures and the like (not shown) required for the semiconductor elements are also already formed on the 1 st surface Wa. After the wafer processing tape T1 having the adhesive surface T1a is bonded to the 2 nd surface Wb side of the semiconductor wafer W, a dicing groove 30a having a predetermined depth is formed on the 1 st surface Wa side of the semiconductor wafer W by using a rotary cutter such as a dicing device in a state where the semiconductor wafer W is held on the wafer processing tape T1. The dividing grooves 30a are gaps for separating the semiconductor wafer W into semiconductor chip units (the dividing grooves 30a are schematically shown by thick lines in fig. 2 to 4).
Then, as shown in fig. 2 (c), the wafer processing tape T2 having the adhesive surface T2a is bonded to the 1 st surface Wa side of the semiconductor wafer W, and the wafer processing tape T1 is peeled from the semiconductor wafer W.
Then, as shown in fig. 2 d, the semiconductor wafer W is thinned to a predetermined thickness by grinding from the 2 nd surface Wb in a state where the semiconductor wafer W is held on the wafer processing tape T2 (wafer thinning step). The grinding process may be performed using a grinding apparatus having a grinding stone. Through this wafer thinning step, the semiconductor wafer 30A that can be singulated into a plurality of semiconductor chips 31 can be formed in the present embodiment. Specifically, the semiconductor wafer 30A has a portion (connection portion) where portions to be singulated into the plurality of semiconductor chips 31 on the 2 nd surface Wb side are connected in the wafer. The thickness of the connection portion in the semiconductor wafer 30A, i.e., the distance between the 2 nd surface Wb of the semiconductor wafer 30A and the tip end of the dividing groove 30A on the 2 nd surface Wb side is, for example, 1 to 30 μm, and preferably 3 to 20 μm.
(Process A)
In step a, a semiconductor wafer divided body including a plurality of semiconductor chips or a semiconductor wafer capable of being singulated into a plurality of semiconductor chips is attached to the dicing die-bonding film 1 on the adhesive layer 20 side.
In one embodiment of the step a, as shown in fig. 3 (a), the semiconductor wafer 30A held by the wafer processing tape T2 is bonded to the adhesive layer 20 of the dicing die bonding film 1. Then, as shown in fig. 3 (b), the wafer processing tape T2 is peeled from the semiconductor wafer 30A. When the pressure-sensitive adhesive layer 12 in the dicing die-bonding film 1 is a radiation-curable pressure-sensitive adhesive layer, the pressure-sensitive adhesive layer 12 may be irradiated with radiation such as ultraviolet rays from the base material 11 side after the semiconductor wafer 30A is bonded to the adhesive layer 20, instead of the irradiation with radiation in the production process of the dicing die-bonding film 1. The dose of irradiation is, for example, 50 to 500mJ/cm 2 Preferably 100 to 300mJ/cm 2 . The region (irradiation region R shown in fig. 1) of the dicing die-bonding film 1 to which irradiation is performed as a measure for reducing the adhesive strength of the adhesive layer 12 is, for example, a region other than the peripheral edge portion of the bonding region of the adhesive layer 20 in the adhesive layer 12.
(Process B)
In step B, the dicing tape 10 in the dicing die-bonding film 1 is spread at a relatively low temperature to cut at least the adhesive layer 20, thereby obtaining a semiconductor chip with an adhesive layer.
In one embodiment of the step B, first, the ring frame 41 is attached to the adhesive layer 12 of the dicing tape 10 in the dicing die-bonding film 1, and then, as shown in fig. 4 (a), the dicing die-bonding film 1 with the semiconductor wafer 30A is fixed to the holding tool 42 of the expanding device.
Then, as shown in fig. 4 (b), the first expanding step (cooling expanding step) under relatively low temperature conditions is performed to singulate the semiconductor wafer 30A into a plurality of semiconductor chips 31 and to cut the adhesive layer 20 of the dicing die bonding film 1 into small adhesive layers 21, thereby obtaining the adhesive layer-attached semiconductor chips 31. In the cooling and spreading step, the hollow cylindrical lift member 43 provided in the spreading device is brought into contact with the dicing tape 10 on the lower side of the dicing die-bonding film 1 in the drawing and is lifted, and the dicing tape 10 to which the dicing die-bonding film 1 of the semiconductor wafer 30A is bonded is spread so as to be stretched along the two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30A. The stretching is performed under conditions such that a tensile stress in the range of 15 to 32MPa, preferably 20 to 32MPa is generated in the dicing tape 10. The temperature condition in the cooling expansion step is, for example, 0 ℃ or lower, preferably-20 to-5 ℃, more preferably-15 to-5 ℃, and still more preferably-15 ℃. The spreading speed (speed of raising the jack-up member 43) in the cooling spreading step is preferably 0.1 to 100 mm/sec. The amount of expansion in the cooling expansion step is preferably 3 to 16mm.
When the semiconductor wafer 30A capable of being singulated into a plurality of semiconductor chips is used in the step B, the semiconductor wafer 30A is cut at a thin portion where cracks are likely to occur, and is singulated into the semiconductor chips 31. At the same time, in the step B, the adhesive layer 20 which adheres to the adhesive layer 12 of the expanded dicing tape 10 is inhibited from being deformed in the regions where the semiconductor chips 31 adhere to each other, while such deformation inhibition is not generated at the position in the direction perpendicular to the dividing groove between the semiconductor chips 31 in the drawing, and the tensile stress generated in the dicing tape 10 acts in this state. As a result, the adhesive layer 20 is cut at a position in the direction perpendicular to the dividing groove between the semiconductor chips 31. After the cutting by the expansion, as shown in fig. 4 (c), the knock-up member 43 is lowered to release the expanded state of the dicing tape 10.
(Process C)
In step C, the dicing tape 10 is spread under a relatively high temperature condition to widen the interval between the semiconductor chips with the adhesive layer.
In one embodiment of step C, first, as shown in fig. 5 (a), the 2 nd expanding step (room temperature expanding step) under relatively high temperature conditions is performed to widen the distance (spacing) between the semiconductor chips 31 with the adhesive layer. In step C, the hollow cylindrical jacking member 43 provided in the expanding device is raised again to expand the dicing tape 10 for dicing the die-bonding film 1. The temperature condition in the second expansion step 2 is, for example, 10 ℃ or higher, preferably 15 to 30 ℃. The expanding speed (speed of raising the jack-up member 43) in the 2 nd expanding step is, for example, 0.1 to 10 mm/sec, preferably 0.3 to 1 mm/sec. The expansion amount in the 2 nd expansion step is, for example, 3 to 16mm. In the step C, the distance between the semiconductor chips 31 with the adhesive layer is increased to such an extent that the semiconductor chips 31 with the adhesive layer can be picked up from the dicing tape 10 in a suitable manner in a pickup step described later. After the distance is widened by the expansion, the jack member 43 is lowered as shown in fig. 5 (b), and the expanded state of the dicing tape 10 is released. From the viewpoint of suppressing the narrowing of the distance between the semiconductor chips 31 with the adhesive layer on the dicing tape 10 after the expanded state is released, it is preferable to heat and shrink the outer portion of the holding region of the semiconductor chips 31 in the dicing tape 10 before the expanded state is released.
After the step C, there may be provided a cleaning step of cleaning the semiconductor chip 31 side of the dicing tape 10 having the semiconductor chip 31 with the adhesive layer with a cleaning liquid such as water, if necessary.
(Process D)
In step D (pickup step), the singulated semiconductor chips with the adhesive layer are picked up. In one embodiment of the step D, after the above-described cleaning step is performed as necessary, the semiconductor chip 31 with the adhesive layer is picked up from the dicing tape 10 as shown in fig. 6. For example, the semiconductor chip 31 with the adhesive layer to be picked up is lifted up via the dicing tape 10 by raising the needle member 44 of the pickup mechanism at the lower side of the dicing tape 10 in the drawing, and then is sucked and held by the suction jig 45. In the picking-up step, the needle member 44 is pushed up at a speed of, for example, 1 to 100 mm/sec and the needle member 44 is pushed up at a height of, for example, 50 to 3000 μm.
The method of manufacturing a semiconductor device may further include a step other than the steps a to D. For example, in one embodiment, as shown in fig. 7 (a), the picked-up semiconductor chip 31 with the adhesive layer is temporarily fixed to the adherend 51 via the adhesive layer 21 (temporary fixing step). Examples of the adherend 51 include: lead frames, TAB (Tape Automated Bonding) films, wiring substrates, separately fabricated semiconductor chips, and the like. The shear adhesion at 25 ℃ of the adhesive layer 21 at the time of temporary fixation is preferably 0.2MPa or more, more preferably 0.2 to 10MPa, to the adherend 51. The configuration in which the shear adhesion force of the adhesive layer 21 is 0.2MPa or more can suppress shear deformation from occurring in the adhesive surface between the adhesive layer 21 and the semiconductor chip 31 or the adherend 51 due to ultrasonic vibration or heating in the wire bonding step described later, and can suitably perform wire bonding. The shear adhesion at 175 ℃ of the adhesive layer 21 at the time of temporary fixation is preferably 0.01MPa or more, more preferably 0.01 to 5MPa, to the adherend 51. After the temporary fixing step, the adhesive layer 21 may be incompletely cured by heating at 130 ℃ for 30 minutes, for example (precuring step).
Then, the electrode pad (not shown) of the semiconductor chip 31 and a terminal portion (not shown) of the adherend 51 are electrically connected by a bonding wire 52 (wire bonding step). The connection of the electrode pad of the semiconductor chip 31, the terminal portion of the adherend 51, and the bonding wire 52 can be achieved by ultrasonic welding with heating, and is performed so that the adhesive layer 21 is not thermally cured. As the bonding wire 52, for example, a gold wire, an aluminum wire, a copper wire, or the like can be used. The wire heating temperature in wire bonding is, for example, 80 to 250 ℃, preferably 80 to 220 ℃. The heating time is several seconds to several minutes.
When a configuration is made in which the multi-stage semiconductor chip 31 is laminated on the adherend 51 via the adhesive layer 21 as shown in fig. 7 (b 1), the temporary fixing step and the wire bonding step are performed as follows. After the picked-up semiconductor chip 31 with the adhesive layer is temporarily fixed to the adherend 51 via the adhesive layer 21 (fig. 7 (a)), the semiconductor chip 31 with the adhesive layer picked up separately is further temporarily fixed to the upper surface of the semiconductor chip 31 temporarily fixed to the adherend 51 via the adhesive layer 21 in the same manner as in the above-described temporary fixing step. At this time, the semiconductor chip 31 is temporarily fixed with a shift in the plane extending direction so as to avoid the electrode pad on the upper surface of the semiconductor chip from being temporarily fixed to the adherend 51. This temporary fixation is repeated a plurality of times (temporary fixation step). Thereafter, if necessary, the adhesive layers 21 are incompletely cured through the pre-curing step, and then wire bonding is performed on each semiconductor chip 31 in the same manner as in the wire bonding step (wire bonding step).
In the multi-stage lamination structure of the semiconductor chip 31 as shown in fig. 7 (b 1), the semiconductor chip 31 with the adhesive layer is laminated with a shift in one plane extending direction (the right direction in fig. 7 (b 1)) while avoiding the wire connecting portion, with its own unit. In such a multi-stage stacked structure, the semiconductor chip 31a at the uppermost stage is wire-bonded at the free portion. As another embodiment of the multi-stage laminated structure, there can be mentioned the following structure: as shown in fig. 7 (b 2), in order to avoid the multistage lamination configuration from excessively expanding in the surface extending direction of the semiconductor chip 31, the semiconductor chip 31 with the adhesive layer is laminated while being shifted in one surface extending direction (for example, right direction) with its own unit, and is laminated while being shifted in the other surface extending direction (for example, left direction) by reversing the shift direction at a stage where the semiconductor chip is laminated to some extent. In such a multi-stage stacked structure of another embodiment, the semiconductor chip 31a at the uppermost stage and the semiconductor chip 31b at the portion where the stacking direction is reversed are wire-bonded at the free portion.
Then, as shown in fig. 7 c, the semiconductor chip 31 is sealed with a sealing resin 53 for protecting each semiconductor chip 31 and the bonding wire 52 on the adherend 51 (sealing step). In the sealing step, thermosetting of the adhesive layer 21 is performed. In the sealing step, the sealing resin 53 is formed by, for example, a transfer molding technique using a mold. As a constituent material of the sealing resin 53, for example, an epoxy resin can be used. In the sealing step, the heating temperature for forming the sealing resin 53 is, for example, 165 to 185 ℃, and the heating time is, for example, 60 seconds to several minutes. When the sealing resin 53 is not sufficiently cured in the sealing step, a post-curing step for completely curing the sealing resin 53 is performed after the sealing step. Even when the adhesive layer 21 is not completely heat-cured in the sealing step, the adhesive layer 21 may be completely heat-cured together with the sealing resin 53 in the post-curing step. In the post-curing step, the heating temperature is, for example, 165 to 185 ℃ and the heating time is, for example, 0.5 to 8 hours.
In the above embodiment, as described above, after the semiconductor chip 31 with the adhesive layer is temporarily fixed to the adherend 51, the wire bonding step is performed in a state where the adhesive layer 21 is not completely thermally cured. Instead of this configuration, in the above-described method for manufacturing a semiconductor device, the adhesive layer-attached semiconductor chip 31 may be temporarily fixed to the adherend 51, and then the adhesive layer 21 may be thermally cured and then the wire bonding step may be performed.
In the method for manufacturing a semiconductor device, as another embodiment, a wafer thinning step shown in fig. 8 may be performed instead of the wafer thinning step described with reference to fig. 2 (d). After the above-described process with reference to fig. 2 (c), in the wafer thinning step shown in fig. 8, the semiconductor wafer W is thinned to a predetermined thickness by grinding from the 2 nd surface Wb in a state where the wafer W is held on the wafer processing tape T2, and the semiconductor wafer divided bodies 30B including the plurality of semiconductor chips 31 and held on the wafer processing tape T2 are formed. In the wafer thinning step, the wafer may be ground until the dividing groove 30a is exposed on the 2 nd surface Wb side (method 1), or the following method may be used: the wafer is ground from the 2 nd surface Wb side until the wafer reaches the dividing grooves 30a, and then a crack is generated between the dividing grooves 30a and the 2 nd surface Wb by a pressing force of the rotating grindstone against the wafer, thereby forming semiconductor wafer divided bodies 30B (method 2). The depth of the dividing groove 30a formed as described above with reference to fig. 2 (a) and 2 (b) from the 1 st surface Wa is determined as appropriate depending on the method used. Fig. 8 schematically shows the dividing groove 30a formed by the method 1 or the dividing groove 30a formed by the method 2 and the crack connected thereto by a thick line. In the above-described method for manufacturing a semiconductor device, the steps described above with reference to fig. 3 to 7 may be performed using the semiconductor wafer segment 30B thus produced as a semiconductor wafer segment in the step a instead of the semiconductor wafer 30A.
Fig. 9 (a) and 9 (B) show step B of this embodiment, that is, step 1 of expanding (cooling expansion step) after bonding the semiconductor wafer segment 30B to the dicing die-bonding film 1. In step B of this embodiment, the hollow cylindrical jacking member 43 provided in the expanding device is brought into contact with the dicing tape 10 on the lower side of the dicing die-bonding film 1 in the drawing and is raised, and the dicing tape 10 of the dicing die-bonding film 1 to which the semiconductor wafer segments 30B are bonded is expanded so as to be stretched in the two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer segments 30B. The expansion is performed under conditions such that a tensile stress in the range of, for example, 5 to 28MPa, preferably 8 to 25MPa, is generated in the dicing tape 10. The temperature condition in the cooling expansion step is, for example, 0 ℃ or lower, preferably-20 to-5 ℃, more preferably-15 to-5 ℃, and still more preferably-15 ℃. The expansion rate (the speed of raising the jack-up member 43) in the cooling expansion step is preferably 1 to 400 mm/sec. The expansion amount in the cooling expansion step is preferably 50 to 200mm. Through such a cooling and spreading step, adhesive layer 20 of dicing die bond film 1 is cut into small adhesive layers 21, and semiconductor chip 31 with an adhesive layer is obtained. Specifically, in the cooling and spreading step, the adhesive layer 20 that adheres to the adhesive layer 12 of the spread dicing tape 10 suppresses deformation in the regions of the semiconductor wafer divided bodies 30B that adhere to the semiconductor chips 31, while such a deformation suppressing action does not occur at positions that are located in the direction perpendicular to the dividing grooves 30a between the semiconductor chips 31 in the drawing, and the tensile stress that occurs in the dicing tape 10 in this state acts. As a result, the adhesive layer 20 is cut at a position in the direction perpendicular to the dividing groove 30a between the semiconductor chips 31 in the drawing.
In the above-described method for manufacturing a semiconductor device, as still another embodiment, a semiconductor wafer 30C produced as follows may be used instead of the semiconductor wafer 30A or the semiconductor wafer divided bodies 30B used in the step a.
In this embodiment, as shown in fig. 10 (a) and 10 (b), first, the modified region 30b is formed in the semiconductor wafer W. The semiconductor wafer W has a 1 st surface Wa and a 2 nd surface Wb. Various semiconductor elements (not shown) have been already mounted on the 1 st surface Wa side of the semiconductor wafer W, and wiring structures and the like (not shown) required for the semiconductor elements have also been formed on the 1 st surface Wa. After the wafer processing tape T3 having the adhesive surface T3a is bonded to the 1 st surface Wa side of the semiconductor wafer W, the semiconductor wafer W is irradiated with laser light having a focal point located inside the wafer from the side opposite to the wafer processing tape T3 along the pre-dividing line in a state where the semiconductor wafer W is held on the wafer processing tape T3, and a modified region 30b is formed in the semiconductor wafer W by ablation due to multiphoton absorption. The modified region 30b is a weakened region for separating the semiconductor wafer W into semiconductor chip units. A method of forming the modified regions 30b on the pre-dividing lines in the semiconductor wafer by laser irradiation is described in detail in, for example, japanese patent application laid-open No. 2002-192370, and the laser irradiation conditions in this embodiment can be appropriately adjusted within the following ranges, for example.
< laser irradiation Condition >
(A) Laser
Laser light source semiconductor laser excitation Nd: YAG laser
Wavelength 1064nm
Laser spot cross-sectional area 3.14 x 10 -8 cm 2
Oscillatory form Q-switch pulse
Repetition frequency below 100kHz
Pulse width of 1 μ s or less
Power of 1mJ or less
Laser quality TEM00
Linearly polarized light having polarization characteristics
(B) Lens for condensing light
Multiplying power of 100 times or less
NA 0.55
Transmittance to laser wavelength of 100% or less
(C) The moving speed of the mounting table for mounting the semiconductor substrate is below 280 mm/s
Then, as shown in fig. 10C, the semiconductor wafer W is thinned to a predetermined thickness by grinding from the 2 nd surface Wb while the semiconductor wafer W is held on the wafer processing tape T3, thereby forming a semiconductor wafer 30C capable of being singulated into a plurality of semiconductor chips 31 (wafer thinning step). In the above-described method for manufacturing a semiconductor device, the semiconductor wafer 30C thus produced may be used as a semiconductor wafer capable of being singulated in the step a instead of the semiconductor wafer 30A, and the above-described steps with reference to fig. 3 to 7 may be performed.
Fig. 11 (a) and 11 (B) show a step B in this embodiment, that is, a step 1 of expanding (cooling expansion step) after the semiconductor wafer 30C is bonded to the dicing die-bonding film 1. In the cooling and spreading step, the hollow cylindrical lift member 43 provided in the spreading device is brought into contact with the dicing tape 10 on the lower side of the dicing die-bonding film 1 in the drawing and is lifted, and the dicing tape 10 of the dicing die-bonding film 1 to which the semiconductor wafer 30C is bonded is spread so as to be stretched along a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30C. The stretching is performed under conditions such that a tensile stress in the range of, for example, 5 to 28MPa, preferably 8 to 25MPa, is generated in the dicing tape 10. The temperature condition in the cooling expansion step is, for example, 0 ℃ or lower, preferably-20 to-5 ℃, more preferably-15 to-5 ℃, and still more preferably-15 ℃. The expansion rate (the speed of raising the jack-up member 43) in the cooling expansion step is preferably 1 to 400 mm/sec. The expansion amount in the cooling expansion step is preferably 50 to 200mm. Through such a cooling and spreading step, adhesive layer 20 of dicing die bond film 1 is cut into small adhesive layers 21, and semiconductor chip 31 with an adhesive layer is obtained. Specifically, in the cooling and spreading step, cracks are formed in the fragile modified region 30b in the semiconductor wafer 30C, and the semiconductor chips 31 are singulated. At the same time, in the cooling and spreading step, in the adhesive layer 20 that adheres to the adhesive layer 12 of the spread dicing tape 10, deformation is suppressed in each region where the semiconductor chips 31 of the semiconductor wafer 30C adhere, while such a deformation suppressing action is not generated at a position in the direction perpendicular to the crack formation position of the wafer in the drawing, and the tensile stress generated in the dicing tape 10 acts in this state. As a result, the adhesive layer 20 is cut at a position in the direction perpendicular to the crack formation position between the semiconductor chips 31 in the figure.
In the method for manufacturing a semiconductor device, the dicing die-bonding film 1 can be used for obtaining a semiconductor chip with an adhesive layer as described above, and can also be used for obtaining a semiconductor chip with an adhesive layer when a plurality of semiconductor chips are stacked and mounted in 3 dimensions. The semiconductor chips 31 in such 3-dimensional mounting may or may not be provided with a spacer interposed therebetween together with the adhesive layer 21.
Examples
The present invention will be described in more detail with reference to the following examples, but the present invention is not limited to these examples.
Example 1
(preparation of dicing tape)
100 parts by mass of 2-ethylhexyl acrylate (2 EHA), 19 parts by mass of 2-hydroxyethyl acrylate (HEA), 0.4 part by mass of benzoyl peroxide, and 80 parts by mass of toluene were charged into a reaction vessel equipped with a condenser, a nitrogen inlet, a thermometer, and a stirrer, and polymerization was carried out at 60 ℃ for 10 hours in a nitrogen stream to obtain a solution containing the acrylic polymer A.
To the solution containing the acrylic polymer A, 1.2 parts by mass of 2-methacryloyloxyethyl isocyanate (MOI) was added, and an addition reaction was carried out in an air stream at 50 ℃ for 60 hours to obtain an acrylic polymer A'.
Then, 1.3 parts by mass of a polyisocyanate compound (trade name "Coronate L", manufactured by tokyo co., ltd.) and 3 parts by mass of a photopolymerization initiator (trade name "Irgacure 184", manufactured by BASF) were added to 100 parts by mass of the acrylic polymer a' to prepare an adhesive composition a.
The obtained adhesive composition A was applied to the silicone-treated surface of the PET-based separator, and heated at 120 ℃ for 2 minutes to remove the solvent, thereby forming an adhesive layer A having a thickness of 10 μm. Then, an EVA film (125 μm thick, manufactured by GUNZE LIMITED) as a base material was laminated on the adhesive layer, and the resultant was stored at 23 ℃ for 72 hours to obtain a dicing tape A.
(preparation of adhesive layer)
An adhesive composition A having a solid content of 30 mass% was prepared by dissolving 200 parts by mass of an epoxy resin (trade name "KI-3000-4", manufactured by Tokyo chemical Co., ltd.), 200 parts by mass of a phenol resin (trade name "MEHC-7851SS", manufactured by Minghe chemical Co., ltd.), 350 parts by mass of a silica filler (converted to a silica filler) and 2 parts by mass of a curing accelerator (trade name "Curezol 2PHZ-PW", manufactured by Sikko chemical Co., ltd.) in methyl ethyl ketone with respect to 100 parts by mass of an acrylic resin (trade name "Teisanrein SG-70L", manufactured by Nagase ChemteX Corporation, having a mass average molecular weight of 90 ten thousand).
Then, the adhesive composition A was applied by an applicator to the silicone release-treated surface of the PET separator (thickness: 50 μm) having the silicone release-treated surface to form a coating film, and the coating film was desolventized at 120 ℃ for 2 minutes. In this manner, an adhesive layer A having a thickness (average thickness) of 10 μm was formed on the PET separator.
(preparation of dicing die-bonding film)
The PET-based separator was peeled off from the dicing tape a, and the adhesive layer a was adhered to the exposed adhesive layer. In the bonding, the center of the dicing tape is aligned with the center of the die-bonding film. In addition, the hand is used in the attaching wayAnd (4) pressing the rolls. Then, the adhesive layer in the dicing tape was irradiated with ultraviolet rays from the EVA base material side. In the ultraviolet irradiation, a high-pressure mercury lamp was used so that the cumulative amount of light irradiated was 300mJ/cm 2 . In the above manner, the dicing die-bonding film of example 1 having a laminated structure including the dicing tape and the adhesive layer was produced.
Example 2
(preparation of adhesive layer)
An adhesive composition B having a solid content of 30 mass% was prepared by dissolving 200 parts by mass of an epoxy resin (trade name "KI-3000-4", manufactured by Tokyo chemical Co., ltd.), 200 parts by mass of a phenol resin (trade name "MEHC-7851SS", manufactured by Minghu chemical Co., ltd.), 350 parts by mass (converted to a silica filler) of a silica filler (trade name "MEK-ST-2040", manufactured by Nikko chemical Co., ltd., average particle diameter 190 nm) and 2 parts by mass of a curing accelerator (trade name "Curezol 2PHZ-PW", manufactured by Nikko chemical Co., ltd.) in methyl ethyl ketone with respect to 100 parts by mass of an acrylic resin (trade name "Teisanresin SG-70L", manufactured by Nagase ChemteX Corporation, having a mass average molecular weight of 90 ten thousand).
Then, the adhesive composition B was applied to the silicone release-treated surface of the PET separator (thickness: 50 μm) having the silicone release-treated surface by using an applicator to form a coating film, and the coating film was desolventized at 120 ℃ for 2 minutes. In this manner, an adhesive layer B having a thickness (average thickness) of 10 μm was formed on the PET separator.
(preparation of dicing die-bonding film)
The PET-based separator was peeled off from the dicing tape a, and the adhesive layer B was bonded to the exposed adhesive layer. In the bonding, the center of the dicing tape is aligned with the center of the die-bonding film. Further, a hand roller was used for the bonding. Then, the adhesive layer in the dicing tape was irradiated with ultraviolet rays from the EVA base material side. In the ultraviolet irradiation, a high-pressure mercury lamp was used so that the cumulative quantity of light irradiated was 300mJ/cm 2 . In the above manner, the dicing die-bonding film of example 2 having a laminated structure including the dicing tape and the adhesive layer was produced.
Reference example 1
(preparation of adhesive layer)
An adhesive composition C having a solid content of 30% by mass was prepared by dissolving 200 parts by mass of an epoxy resin (trade name "KI-3000-4", manufactured by Tokyo chemical Co., ltd.), 200 parts by mass of a phenol resin (trade name "MEHC-7851SS", manufactured by Minghe chemical Co., ltd.), 350 parts by mass of a silica filler (converted to a silica filler) and 2 parts by mass of a curing accelerator (trade name "Curezol 2PHZ-PW", manufactured by Sikko chemical Co., ltd.) in methyl ethyl ketone with respect to 100 parts by mass of an acrylic resin (trade name "Teisanrein SG-70L", manufactured by Nagase ChemteX Corporation, having a mass average molecular weight of 90 ten thousand).
Then, adhesive composition C was applied to the silicone release-treated surface of the PET separator (thickness 50 μm) having the silicone release-treated surface using an applicator to form a coating film, and the coating film was subjected to desolvation at 120 ℃ for 2 minutes. In this manner, an adhesive layer C having a thickness (average thickness) of 10 μm was formed on the PET separator.
(preparation of dicing die-bonding film)
The PET-based separator was peeled off from the dicing tape a, and the adhesive layer C was bonded to the exposed adhesive layer. In the bonding, the center of the dicing tape is aligned with the center of the die-bonding film. Further, a hand roller was used for the bonding. Then, the adhesive layer in the dicing tape was irradiated with ultraviolet rays from the EVA base material side. In the ultraviolet irradiation, a high-pressure mercury lamp was used so that the cumulative amount of light irradiated was 300mJ/cm 2 . In the above manner, the dicing die-bonding film of reference example 1 having a laminated structure including the dicing tape and the adhesive layer was produced.
Reference example 3
(preparation of adhesive layer)
An adhesive composition D having a solid content of 28 mass% was prepared by dissolving 115 parts by mass of an epoxy resin (trade name "KI-3000-4", manufactured by Tokyo ChemteX Corporation), 115 parts by mass of a phenol resin (trade name "MEHC-7851SS", manufactured by Minghu Kaisha Kabushiki Kaisha), 220 parts by mass of a silica filler (trade name "MEK-ST-2040", manufactured by Nikko Kaisha K.K., average particle diameter of 190 nm) (converted to a silica filler), and 2 parts by mass of a curing accelerator (trade name "Curezol 2PHZ-PW", manufactured by Nikko Kaisha K.K.) in 100 parts by mass of an acrylic resin (trade name "Teisanresin SG-70L", manufactured by Nagase ChemteX Corporation, having a mass average molecular weight of 90 ten thousand) in methyl ethyl ketone.
Then, the adhesive composition D was applied to the silicone release-treated surface of the PET separator (thickness: 50 μm) having the silicone release-treated surface by means of an applicator to form a coating film, and the coating film was desolventized at 120 ℃ for 2 minutes. In this manner, an adhesive layer D having a thickness (average thickness) of 10 μm was formed on the PET separator.
(preparation of dicing die-bonding film)
The PET-based separator was peeled off from the dicing tape a, and the adhesive layer D was bonded to the exposed adhesive layer. In the bonding, the center of the dicing tape is aligned with the center of the die-bonding film. Further, a hand roller was used for the bonding. Then, the adhesive layer in the dicing tape was irradiated with ultraviolet rays from the EVA base material side. In the ultraviolet irradiation, a high-pressure mercury lamp was used so that the cumulative amount of light irradiated was 300mJ/cm 2 . In the above manner, the dicing die-bonding film of reference example 3 having a laminated structure including the dicing tape and the adhesive layer was produced.
Example 5
(preparation of adhesive layer)
An adhesive composition E having a solid content of 30 mass% was prepared by dissolving 200 parts by mass of an epoxy resin (trade name "KI-3000-4", manufactured by Tokyo chemical Co., ltd.), 200 parts by mass of a phenol resin (trade name "MEHC-7851SS", manufactured by Minghu chemical Co., ltd.), 350 parts by mass (converted to a silica filler) of a silica filler (trade name "MEK-ST-2040", manufactured by Nikko chemical Co., ltd., average particle diameter 190 nm) and 1 part by mass of a curing accelerator (trade name "Curezol 2PHZ-PW", manufactured by Nikko chemical Co., ltd.) in 100 parts by mass of an acrylic resin (trade name "Teisanresin SG-70L", manufactured by Nagase ChemteX Corporation, having a mass average molecular weight of 90 ten thousand) in methyl ethyl ketone.
Then, adhesive composition E was applied to the silicone release-treated surface of the PET separator (thickness 50 μm) having the silicone release-treated surface using an applicator to form a coating film, and the coating film was subjected to desolvation at 120 ℃ for 2 minutes. In this manner, an adhesive layer E having a thickness (average thickness) of 10 μm was formed on the PET separator.
(preparation of dicing die-bonding film)
The PET-based separator was peeled off from the dicing tape a, and the adhesive layer E was bonded to the exposed adhesive layer. In the bonding, the center of the dicing tape is aligned with the center of the die-bonding film. Further, a hand roller was used for the bonding. Then, the adhesive layer in the dicing tape was irradiated with ultraviolet rays from the EVA base material side. In the ultraviolet irradiation, a high-pressure mercury lamp was used so that the cumulative quantity of light irradiated was 300mJ/cm 2 . In the above manner, the dicing die-bonding film of example 5 having a laminated structure including the dicing tape and the adhesive layer was produced.
Reference example 2
(preparation of adhesive layer)
An adhesive composition F having a solid content of 30 mass% was prepared by dissolving 200 parts by mass of an epoxy resin (trade name "KI-3000-4", manufactured by Tokyo chemical Co., ltd.), 200 parts by mass of a phenol resin (trade name "MEHC-7851SS", manufactured by Minghe chemical Co., ltd.), 350 parts by mass of a silica filler (trade name "SE2050-MCV", manufactured by Admatech, ltd.; average particle diameter 500 nm) (converted to a silica filler), and 2 parts by mass of a curing accelerator (trade name "Curezol 2PHZ-PW", manufactured by Katsu chemical Co., ltd.) in 100 parts by mass of an acrylic resin (trade name "Teisanrein SG-70L", manufactured by Nagase ChemetX Corporation, having a mass average molecular weight of 90 ten thousand) in methyl ethyl ketone.
Then, the adhesive composition F was applied to the silicone release-treated surface of the PET spacer (thickness: 50 μm) having the silicone release-treated surface by using an applicator to form a coating film, and the coating film was subjected to desolvation at 120 ℃ for 2 minutes. In this manner, an adhesive layer F having a thickness (average thickness) of 10 μm was formed on the PET separator.
(preparation of dicing die-bonding film)
The PET-based separator was peeled off from the dicing tape a, and the adhesive layer F was bonded to the exposed adhesive layer. In the bonding, the center of the dicing tape is aligned with the center of the die-bonding film. Further, a hand roller was used for the bonding. Then, the adhesive layer in the dicing tape was irradiated with ultraviolet rays from the EVA base material side. In the ultraviolet irradiation, a high-pressure mercury lamp was used so that the cumulative quantity of light irradiated was 300mJ/cm 2 . In the above manner, the dicing die-bonding film of reference example 2 having a laminated structure including the dicing tape and the adhesive layer was produced.
Example 7
(preparation of adhesive layer)
An adhesive composition G having a solid content of 30 mass% was prepared by dissolving 440 parts by mass of an epoxy resin (trade name "KI-3000-4", manufactured by Tokyo chemical Co., ltd.), 440 parts by mass of a phenol resin (trade name "MEHC-7851SS", manufactured by Minghu chemical Co., ltd.), 430 parts by mass of a silica filler (reduced to the silica filler) (trade name "MEK-ST-2040", manufactured by Nikko chemical Co., ltd., average particle diameter 190 nm), and 3 parts by mass of a curing accelerator (trade name "Curezol 2PHZ-PW", manufactured by Katsu chemical Co., ltd.) in 100 parts by mass of an acrylic resin (trade name "Teisanrein SG-70L", manufactured by Nagase ChemteX Corporation, having a mass average molecular weight of 90 ten thousand).
Then, the adhesive composition G was applied by using an applicator to the silicone release-treated surface of the PET separator (thickness: 50 μm) having the silicone release-treated surface to form a coating film, and the coating film was desolventized at 120 ℃ for 2 minutes. In this manner, an adhesive layer G having a thickness (average thickness) of 10 μm was formed on the PET separator.
(preparation of dicing die-bonding film)
The PET-based separator was peeled off from the dicing tape a, and the adhesive layer G was adhered to the exposed adhesive layer. In the bonding, the center of the dicing tape is aligned with the center of the die-bonding film. Further, a hand roller was used for the bonding. Then, cut into two halvesThe adhesive layer in the dicing tape was irradiated with ultraviolet rays from the EVA base material side. In the ultraviolet irradiation, a high-pressure mercury lamp was used so that the cumulative quantity of light irradiated was 300mJ/cm 2 . In the above manner, the dicing die-bonding film of example 7 having a laminated structure including the dicing tape and the adhesive layer was produced.
Comparative example 1
(preparation of adhesive layer)
An adhesive composition H having a solid content of 30 mass% was prepared by dissolving 200 parts by mass of an epoxy resin (trade name "KI-3000-4", manufactured by Tokyo chemical Co., ltd.), 200 parts by mass of a phenol resin (trade name "MEHC-7851SS", manufactured by Minghe chemical Co., ltd.), 350 parts by mass of a silica filler (converted to a silica filler) (trade name "YA050C-MJF", manufactured by Admatech, ltd.), and 2 parts by mass of a curing accelerator (trade name "Curezol 2PHZ-PW", manufactured by Sikko chemical Co., ltd.) in 100 parts by mass of an acrylic resin (trade name "Teisanrein SG-70L", manufactured by Nagase ChemteX Corporation, having a mass average molecular weight of 90 ten thousand) in methyl ethyl ketone.
Then, adhesive composition H was applied to the silicone release-treated surface of the PET separator (thickness 50 μm) having the silicone release-treated surface using an applicator to form a coating film, and the coating film was subjected to desolvation at 120 ℃ for 2 minutes. In this manner, an adhesive layer H having a thickness (average thickness) of 20 μm was formed on the PET separator.
(preparation of dicing die-bonding film)
The PET-based separator was peeled off from the dicing tape a, and the adhesive layer H was bonded to the exposed adhesive layer. In the bonding, the center of the dicing tape is aligned with the center of the die-bonding film. Further, a hand roller was used for the bonding. Then, the adhesive layer in the dicing tape was irradiated with ultraviolet rays from the EVA base material side. In the ultraviolet irradiation, a high-pressure mercury lamp was used so that the cumulative quantity of light irradiated was 300mJ/cm 2 . In the above manner, the dicing die-bonding film of comparative example 1 having a laminated structure including the dicing tape and the adhesive layer was produced.
Comparative example 2
(preparation of adhesive layer)
An adhesive composition I having a solid content of 30% by mass was prepared by dissolving 200 parts by mass of an epoxy resin (trade name "KI-3000-4", manufactured by Tokyo Kaisha) 200 parts by mass of a phenol resin (trade name "MEHC-7851SS", manufactured by Minghe Kaisha), 350 parts by mass of a silica filler (trade name "MEK-ST-2040", manufactured by Nikko Kaisha, average particle diameter 190 nm) (converted to silica filler), and 0.5 parts by mass of a curing accelerator (trade name "Curezol 2PHZ-PW", manufactured by Sizhou Kaisha) in methyl ethyl ketone with respect to 100 parts by mass of a 123959 parts by mass of an acrylic resin (trade name "Teisanrein SG-70L", manufactured by Nagase ChemteX Corporation, having a mass average molecular weight of 90 ten).
Then, adhesive composition I was applied to the silicone release-treated surface of the PET spacer (thickness: 50 μm) having the silicone release-treated surface by means of an applicator to form a coating film, and the coating film was desolventized at 120 ℃ for 2 minutes. In this manner, an adhesive layer I having a thickness (average thickness) of 10 μm was formed on the PET separator.
(preparation of dicing die-bonding film)
The PET-based separator was peeled off from the dicing tape a, and the adhesive layer I was bonded to the exposed adhesive layer. In the bonding, the center of the dicing tape is aligned with the center of the die-bonding film. Further, a hand roller was used for the bonding. Then, the adhesive layer in the dicing tape was irradiated with ultraviolet rays from the EVA base material side. In the ultraviolet irradiation, a high-pressure mercury lamp was used so that the cumulative quantity of light irradiated was 300mJ/cm 2 . In the above manner, the dicing die-bonding film of comparative example 2 having a laminated structure including the dicing tape and the adhesive layer was produced.
< evaluation >
The adhesive layers and dicing die-bonding films obtained in examples and comparative examples were evaluated as follows. The results are shown in Table 1.
(calorific value before heating)
Adhesive layers obtained in examples and comparative examples were weighed to obtain 10 to 15mg of adhesive layers as measurement samples, the measurement samples were heated from 0 ℃ to 350 ℃ at a heating rate of 10 ℃/min using a differential scanning calorimetry apparatus (trade name "Q200", manufactured by TA Instruments) to perform DSC measurement, and the total heat generation amount [ J/g ] at that time was calculated as the heat generation amount before heating.
(calorific value after 30 minutes of heating at 130 ℃ C.)
The adhesive layers obtained in examples and comparative examples were laminated to a thickness of 200 μm, and the temperature was raised from room temperature to 130 ℃ for 30 minutes in a pressure oven and held at 130 ℃ for 30 minutes. During the heating, pressurization with a gas of 7kgf was performed. The amount of heat generated [ J/g ] after heating at 130 ℃ for 30 minutes was calculated in the same manner as in the "amount of heat generated before heating" described above, except that the adhesive layer after heating was used in the above manner.
(storage modulus)
The adhesive layers obtained in examples and comparative examples were laminated to a thickness of 200 μm, and samples heated and pressurized in the same manner as in the above-mentioned "calorific value after heating at 130 ℃ for 30 minutes" were cut into long strips having a width of 4mm and a length of 30mm with a cutter knife to obtain test pieces, and the dynamic storage modulus was measured in a tensile mode in a temperature range of 0 to 200 ℃ under conditions of a frequency of 1Hz, a temperature rise rate of 10 ℃/minute, a distance between the starting jigs of 10mm, and a strain of 0.1% by using a solid viscoelasticity measuring apparatus (measuring apparatus: manufactured by Rheometric Scientific Co., ltd.). The temperature was raised after 5 minutes at 0 ℃. Then, the value at 130 ℃ was read and taken as the storage modulus [ MPa ] at 130 ℃ after heating at 130 ℃ for 30 minutes.
(average particle diameter of filler)
The adhesive layers obtained in examples and comparative examples were each thermally cured at 175 ℃ for 1 hour, and embedded in a resin using an EpoFix kit manufactured by Struers. The cross section of the adhesive layer was exposed by mechanical polishing of the embedded resin, and the cross section was subjected to ion thinning processing using a CP processing apparatus (trade name "SM-09010", manufactured by japan electronics corporation), and then subjected to conductive treatment, and FE-SEM observation was performed. The FE-SEM observation was carried out at an acceleration voltage of 1 to 5kV, and a reflection electron image was observed. After the filler particles were identified by binarization processing of the obtained Image using Image analysis software "Image-J", the average area of the filler was determined by dividing the area of the filler in the Image by the number of fillers in the Image, and the average particle diameter of the filler was calculated.
(evaluation of chip Stacking)
An adhesive layer F having a thickness of 25 μm was prepared as an adhesive sheet in the same manner as in reference example 2. The adhesive sheet was bonded to a mirror-surface wafer in which a modified region on the pre-dividing line was formed by laser irradiation, and after curing at 175 ℃ for 2 hours, the mirror-surface wafer side was ground until the total thickness of the mirror-surface wafer and the adhesive sheet became 50 μm. After the wafer and dicing ring ground as described above were bonded to the dicing die-bonding films obtained in examples and comparative examples, respectively (wafer bonding temperature: 50 to 80 ℃), the wafer was cleaved and the dicing tape was heat-shrunk using a die-separating device (trade name "DDS2300", manufactured by DISCO Corporation), thereby obtaining a sample. That is, first, the wafer is cut by the cooling and expanding unit under conditions of an expanding temperature of-15 ℃, an expanding speed of 100 mm/sec, and an expanding amount of 12 mm. The chip obtained after cutting had a size of 10mm × 10mm and a chip thickness of 25 μm. Thereafter, the dicing tape was thermally contracted by a heating and expanding unit under conditions of an expansion amount of 10mm, a heating temperature of 250 ℃, an air volume of 40L/min, a heating distance of 20mm, and a rotation speed of 3 °/sec, to obtain an evaluation chip with an adhesive layer.
5 sheets of the evaluation chips with the adhesive layer were stacked in a stepwise manner on a BGA substrate (material: AUS 308) by using a die bonder (trade name "die bonder SPA-300", manufactured by shinkawa) under conditions of a table temperature of 90 ℃, a die bonding load of 1000gf, and a die bonding time of 1 second, and die bonding was performed. The lamination was stepped by shifting 200 μm in the same direction. After lamination, the non-peeled portion was evaluated as good, the peeled portion 1 was evaluated as Δ, and the peeled portion 2 or more was evaluated as x.
(evaluation of wire bonding)
A wafer having one surface subjected to aluminum deposition was ground to obtain a dicing wafer having a thickness of 30 μm. After the dicing wafer was attached to the adhesive layer side of each of the dicing die-bonding films obtained in examples and comparative examples, the wafer was cut in the same manner as in the above-described "evaluation of die lamination", and a die with an adhesive layer was obtained. 5 pieces of the adhesive layer-attached chips were laminated in a stepwise manner on a Cu lead frame under conditions of a stage temperature of 90 ℃, a die bonding load of 1000gf, and a die bonding time of 1 second, and die bonding was performed. The lamination was stepped by shifting 200 μm in the same direction. After the laminate after die bonding was heat-cured at 130 ℃ for 30 minutes, 5 Au wires having a wire diameter of 18 μm were bonded to the free portion of the uppermost die using a wire bonding apparatus (trade name "Maxum Plus", manufactured by Kulicke and Soffa Industries Inc). Au wires were pressure bonded to Cu leadframes at a power of 80Amp, time of 10ms, and load of 50 g. Further, au wires were pressure-bonded to the chip under conditions of a temperature of 130 ℃, a power of 125Amp, a time of 10ms, and a load of 80 g. The case where 1 or more of the 5 Au wires could not be bonded to the chip was determined as x, and the case where 5 of the 5 Au wires could be bonded to the chip was determined as o.
(evaluation of storage stability)
The storage stability was evaluated by the change in viscosity with time. The initial viscosity at 90 ℃ after the production of the adhesive layers obtained in examples and comparative examples was used as the initial viscosity, the rate of increase in viscosity at 90 ℃ after storage at 23 ℃ for 28 days after the production was calculated from the initial viscosity (viscosity increase) [ { viscosity at 90 ℃ after storage at 23 ℃ for 28 days (Pa · s) }/initial viscosity (Pa · s) × 100] (%), and the case where the above-mentioned viscosity increase rate was less than 100% was evaluated as Δ, the case where it was 100% or more and less than 150% was evaluated as x, and the case where it was 150% or more was evaluated as x. The viscosity was measured by a rotary viscometer (trade name "HAAKE MARS III", manufactured by Thermo Fisher Scientific). The measurement conditions were set to 100 μm in gap, 8mm in rotor plate diameter, 10 ℃/min in temperature rise rate, 10% in strain and 5rad/sec in frequency.
[ TABLE 1 ]
Figure GDA0003797429300000521
The adhesive layers of examples 1 to 7 had a small viscosity increase rate, were excellent in storage stability, and were less exothermic amount after heating than those of comparative examples 1 and 2 before heating, and could be cured in a short time. Furthermore, the cured product has a high elastic modulus at 130 ℃ and can be suitably wire-bonded to the free portion.

Claims (2)

1. A dicing die-bonding film comprising:
a dicing tape having a laminated structure comprising a substrate and an adhesive layer,
an adhesive layer that releasably adheres to the adhesive layer in the dicing tape,
the adhesive layer contains a thermosetting component, a thermoplastic resin, a filler and a curing accelerator, and has a heat generation amount measured by DSC after heating at 130 ℃ for 30 minutes of 60% or less of the heat generation amount before heating, a storage modulus at 130 ℃ after heating of 20MPa or more and 4000MPa or less,
the thermosetting component contains a thermosetting resin,
the thermosetting resin comprises an epoxy resin and a phenolic resin,
the hydroxyl group in the phenolic resin is 0.7 to 1.5 equivalents relative to 1 equivalent of the epoxy group in the epoxy resin,
the content of the thermosetting resin is (400/852 x 100) to 70 mass%,
the content of the thermoplastic resin is 3 to (100/852 × 100) mass%,
the content of the curing accelerator is 0.15 to 0.87 parts by mass relative to 100 parts by mass of the thermosetting component,
the average particle size of the filler is 70 to 190nm, and the filler is a silicon dioxide filler.
2. The dicing die-bonding film according to claim 1, wherein the viscosity of the adhesive layer at 90 ℃ is 300 to 100000pa seeds.
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