JP2020061422A - Dicing die-bonding film - Google Patents

Abstract

To provide a dicing die-bonding film capable of realizing good pickup of a semiconductor chip with an adhesive layer after cleaving, even after a long time after manufacturing.SOLUTION: A dicing die-bonding film includes a dicing tape having a lamination structure including a backing material and an adhesive layer, and an adhesive layer adhering peelably to the adhesive layer in the dicing tape. The adhesive layer contains a polymer having a structure part, derived from a crosslinking agent having a radical polymerizable functional group and a first functional group other than the radical polymerizable functional group, while maintaining radical polymerizability of the radical polymerizable functional group, and a radical polymerization initiator having a second functional group capable of reacting with the first functional group.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a dicing die bond film. More specifically, the present invention relates to a dicing die bond film that can be used in the manufacturing process of semiconductor devices.

  In the process of manufacturing a semiconductor device, a dicing die bond film may be used in the process of obtaining a semiconductor chip having an adhesive film of a size corresponding to a die bonding chip, that is, a semiconductor chip with an adhesive layer for die bonding. The dicing die bond film has a size corresponding to the semiconductor wafer to be processed, and includes, for example, a dicing tape including a base material and an adhesive layer, and a die bond film (adhesive that is releasably adhered to the adhesive layer side). Agent layer).

  As one of methods for obtaining a semiconductor chip with an adhesive layer using a dicing die bond film, a method is known in which a step of expanding the dicing tape in the dicing die bond film to cleave the die bond film is performed. In this method, first, a semiconductor wafer is bonded onto the die-bonding film of the dicing die-bonding film. This semiconductor wafer is, for example, one that is later cut together with the die bond film and processed so as to be divided into a plurality of semiconductor chips.

  Next, in order to cleave the die bond film on the dicing tape, the dicing tape of the dicing die bond film is stretched in a two-dimensional direction including a radial direction and a circumferential direction of the semiconductor wafer using an expanding device. In this expanding step, the semiconductor wafer on the die bond film is also cleaved at a position corresponding to the cleaved part on the die bond film, and the semiconductor wafer is diced into a plurality of semiconductor chips on the dicing die bond film or the dicing tape.

  Next, the expanding process is performed again in order to increase the separation distance between the plurality of semiconductor chips with die bond films on the dicing tape after cutting. Next, for example, after undergoing a cleaning step, each semiconductor chip is picked up from above the dicing tape together with a die bond film of a size corresponding to the chip, which is in close contact with the semiconductor chip, by a pin member of a pickup mechanism from below the dicing tape. In this way, a die bond film, that is, a semiconductor chip with an adhesive layer is obtained. This semiconductor chip with an adhesive layer is fixed to an adherend such as a mounting substrate by die bonding via the adhesive layer.

  Techniques relating to the dicing die bond film used as described above are described in Patent Documents 1 to 3 below, for example.

JP 2007-2173 A JP, 2010-177401, A JP, 2016-115804, A

  In the semiconductor manufacturing process, when using a dicing die bond film that has been stored for a long time after manufacturing, at the time of the pickup, the adhesive layer of the dicing tape is irradiated with radiation to cure the adhesive layer to thereby form an adhesive layer and an adhesive layer. Even after the adhesion is reduced, it may be difficult to successfully pick up the semiconductor chip with the adhesive layer.

  The present invention has been made in view of the above problems, and it is an object of the present invention to realize a good pickup for a semiconductor chip with an adhesive layer after cleaving, even after a long time has passed after the manufacture. It is to provide a dicing die bond film. Another object of the present invention is to provide a dicing die bond film capable of realizing a good pickup for a semiconductor chip with an adhesive layer after cleaving.

  As a result of intensive studies to achieve the above-mentioned object, the present inventors have found that a dicing tape having a laminated structure including a base material and an adhesive layer, and the adhesive layer in the dicing tape are releasably adhered thereto. An adhesive layer is provided, and the pressure-sensitive adhesive layer has a radical polymerizable functional group and a structural unit derived from a cross-linking agent having a first functional group other than the radical polymerizable functional group. When a dicing die-bonding film is used, which contains a polymer having the above-mentioned formula (1) and a radical polymerization initiator having a second functional group capable of reacting with the first functional group, after a long time has passed after the production. Also, it has been found that it is possible to realize a good pickup for the semiconductor chip with the adhesive layer after cleaving. The present invention has been completed based on these findings.

  That is, the present invention comprises a dicing tape having a laminated structure including a substrate and a pressure-sensitive adhesive layer, and an adhesive layer releasably adhered to the pressure-sensitive adhesive layer in the dicing tape, wherein the pressure-sensitive adhesive layer Is a polymer having a radical polymerizable functional group and a structural part derived from a crosslinking agent having a first functional group other than the radical polymerizable functional group while maintaining the radical polymerizable property of the radical polymerizable functional group; And a radical polymerization initiator having a second functional group capable of reacting with the functional group of (1), and a dicing die bond film (which may be referred to as a “first dicing die bond film of the present invention”). The dicing die bond film having such a structure can be used to obtain a semiconductor chip with an adhesive layer in the process of manufacturing a semiconductor device.

  The pressure-sensitive adhesive layer of the dicing tape in the dicing die-bonding film of the first present invention has, as described above, a radical polymerizable functional group and a structural portion derived from a crosslinking agent having a first functional group other than the radical polymerizable functional group. It includes a polymer having the radically polymerizable functional group while maintaining the radically polymerizable property. Such a polymer is obtained, for example, by polymerizing (copolymerizing) a raw material monomer containing a monomer component capable of reacting with the first functional group to obtain a polymer, and then obtaining the polymer by using the crosslinking agent (that is, a radically polymerizable functional group and A crosslinking agent having a first functional group) can be obtained by subjecting the above polymer to a condensation reaction or an addition reaction while maintaining the radical polymerizable property of the radical polymerizable functional group. In the pressure-sensitive adhesive layer containing the polymer thus obtained, since the polymer maintains radical polymerizability, the irradiation may cause the polymerization to proceed and cure, resulting in a decrease in the adhesive force. Therefore, for example, when the dicing die-bonding film is used in the dicing process, it is necessary to suppress / prevent the floating of the adhesive layer from the adhesive layer by utilizing the state in which the adhesive layer exhibits a relatively high adhesive force. On the other hand, in the subsequent pickup step, the adhesive force of the pressure-sensitive adhesive layer is reduced, so that the pickup can be easily performed.

  Further, the pressure-sensitive adhesive layer of the dicing tape in the dicing die bond film of the first present invention contains the radical polymerization initiator having the second functional group capable of reacting with the first functional group, as described above. Thereby, the radical polymerization initiator, during the storage of the dicing die bond film before use, remains in the adhesive layer, traps the crosslinking agent that was not incorporated into the polymer, of the crosslinking agent during storage. Curing of the pressure-sensitive adhesive layer due to reaction with the polymer or reaction between the cross-linking agents can be suppressed, and at the time of irradiation of the pressure-sensitive adhesive layer, it acts on the radically polymerizable functional group in the polymer to cause adhesion. Curing of the agent layer can be promoted. Therefore, the dicing die bond film of the first present invention has a sufficiently reduced adhesive strength of the pressure-sensitive adhesive layer when the pressure-sensitive adhesive layer is irradiated with radiation even after a long period of time after production, and as a result, after cleaving. With regard to the semiconductor chip with the adhesive layer, the good pickup can be realized in the pickup step.

  Further, the present invention comprises a dicing tape having a laminated structure including a base material and a pressure-sensitive adhesive layer, and an adhesive layer releasably adhered to the pressure-sensitive adhesive layer in the dicing tape, wherein the pressure-sensitive adhesive layer Has a structural part derived from a crosslinking agent having a radically polymerizable functional group and a first functional group other than the radically polymerizable functional group, and the radically polymerizable functional group in the structural part derived from the crosslinking agent is Provided is a dicing die bond film (which may be referred to as a "second dicing die bond film of the present invention") containing a polymer polymerized by a radical polymerization initiator having a second functional group capable of reacting with one functional group. . The dicing die bond film having such a structure can be used to obtain a semiconductor chip with an adhesive layer in the process of manufacturing a semiconductor device.

  As described above, the pressure-sensitive adhesive layer of the dicing tape in the dicing die-bonding film of the second aspect of the present invention has a radical polymerizable functional group and a cross-linking agent-derived structure having a first functional group other than the radical polymerizable functional group. The radical-polymerizable functional group in the structural part derived from the cross-linking agent includes a polymer polymerized by a radical polymerization initiator having a second functional group capable of reacting with the first functional group. The polymer has the second functional group capable of reacting the polymer contained in the pressure-sensitive adhesive layer of the dicing tape in the dicing die bond film of the first present invention with the radical polymerization initiator (that is, the first functional group). It can be obtained by polymerizing by irradiation with radiation using a radical polymerization initiator). That is, the dicing die bond film of the second aspect of the present invention is obtained by irradiating the adhesive layer of the dicing die bond film of the first aspect of the present invention with radiation to cure it. In such a dicing die-bonding film of the second invention, since the progress of curing of the pressure-sensitive adhesive layer is suppressed even after a long period of time, the semiconductor chip with the adhesive layer after cleaving is not processed in the pickup step. A good pickup can be realized.

  Further, in the dicing die bond film of the first and second inventions, each polymer contained in the pressure-sensitive adhesive layer has a constitutional unit derived from a monomer component having a third functional group capable of reacting with the first functional group. It is preferable that the constitutional unit derived from the monomer component and the structural unit derived from the crosslinking agent are bonded to each other by a chemical reaction between the first functional group and the third functional group. The polymer having such a constitution can be obtained by using a monomer component having a third functional group capable of reacting with the first functional group as the monomer component capable of reacting with the first functional group. it can.

  Further, in the dicing die bond film of the first and second aspects of the present invention, it is preferable that the second functional group is a hydroxy group. That is, the radical polymerization initiator having the second functional group is preferably a hydroxy group-containing radical polymerization initiator. In order to maintain the radical polymerizability in the cross-linking agent even after the cross-linking agent is incorporated into the polymer, the first functional group is a functional group in the precursor polymer before the cross-linking agent is incorporated (for example, the third group). Whereas the second functional group and the functional group in the precursor polymer (for example, the third functional group) have to be reactive with the first functional group, is necessary. Therefore, such a precursor polymer (for example, the above-mentioned precursor polymer having a third functional group), a crosslinking agent having a first functional group, and a radical polymerization initiator having a second functional group are easily prepared or available. From the viewpoint of sex, the above configuration is preferable.

  Further, in the dicing die bond film of the first and second aspects of the present invention, it is preferable that the first functional group is a functional group capable of reacting with a hydroxy group. That is, the cross-linking agent is preferably a cross-linking agent having a functional group capable of reacting with a hydroxy group and a radically polymerizable functional group. In order to maintain the radical polymerizability in the cross-linking agent even after the cross-linking agent is incorporated into the polymer, the first functional group is a functional group in the precursor polymer before the cross-linking agent is incorporated (for example, the third group). Where the first functional group is reactive with both the second functional group and the functional group in the precursor polymer (eg, the third functional group). It is necessary to have Therefore, such a precursor polymer (for example, the above-mentioned precursor polymer having a third functional group), a crosslinking agent having a first functional group, and a radical polymerization initiator having a second functional group are easily prepared or available. From the viewpoint of sex, the above configuration is preferable.

  Further, in the dicing die bond film of the first and second aspects of the present invention, it is preferable that the structural part derived from the cross-linking agent is a structural part derived from the cross-linking agent having a (meth) acryloyl group and an isocyanate group. That is, the cross-linking agent is preferably a cross-linking agent having a (meth) acryloyl group and an isocyanate group. In order to maintain the radical polymerizability in the cross-linking agent even after the cross-linking agent is incorporated into the polymer, the first functional group is a functional group in the precursor polymer before the cross-linking agent is incorporated (for example, the third group). Where the first functional group is reactive with both the second functional group and the functional group in the precursor polymer (eg, the third functional group). It is necessary to have Therefore, such a precursor polymer (for example, the above-mentioned precursor polymer having a third functional group), a crosslinking agent having a first functional group, and a radical polymerization initiator having a second functional group are easily prepared or available. From the viewpoint of sex, the above configuration is preferable. In particular, in the constitution in which the first functional group is an isocyanate group, the second functional group and the third functional group are hydroxy groups, the reaction can be easily traced, and the precursor polymer (for example, the third functional group) is used. Is preferable from the viewpoint of easy production or availability of the precursor polymer having a), the crosslinking agent, and the radical polymerization initiator.

  The dicing die-bonding film of the first aspect of the present invention can realize good picking up of a semiconductor chip with an adhesive layer after cleaving, even after a long period of time has passed after the production. Further, the dicing die bond film of the second aspect of the present invention can be obtained from the dicing die bond film of the first aspect of the present invention, and good pickup can be realized for the semiconductor chip with the adhesive layer after cleaving. In this specification, the first and second dicing die bond films of the present invention may be collectively referred to as the “dicing die bond film of the present invention”.

It is a cross-sectional schematic diagram which shows one Embodiment of the dicing die-bonding film of 1st this invention. 2 shows some steps in a method for manufacturing a semiconductor device using the dicing die bond film shown in FIG. 2 shows a step that follows the step shown in FIG. 4 shows a step that follows the step shown in FIG. 5 shows a step that follows the step shown in FIG. 6 shows a step that follows the step shown in FIG. 7 shows a step that follows the step shown in FIG. 6. FIG. 9 shows some steps in a modified example of the method for manufacturing a semiconductor device using the dicing die bond film shown in FIG. 1. FIG. 9 shows some steps in a modified example of the method for manufacturing a semiconductor device using the dicing die bond film shown in FIG. 1. FIG. 9 shows some steps in a modified example of the method for manufacturing a semiconductor device using the dicing die bond film shown in FIG. 1. FIG. 9 shows some steps in a modified example of the method for manufacturing a semiconductor device using the dicing die bond film shown in FIG. 1.

[Dicing die bond film]
The dicing die bond film of the present invention includes a dicing tape having a laminated structure including a base material and a pressure-sensitive adhesive layer, and an adhesive layer releasably adhered to the pressure-sensitive adhesive layer in the dicing tape.

  The pressure-sensitive adhesive layer of the dicing tape in the dicing die-bonding film of the first present invention further comprises a radical polymerizable functional group and a structural part derived from a cross-linking agent having a first functional group other than the radical polymerizable functional group, which is obtained by radical polymerization. And a radical polymerization initiator having a second functional group capable of reacting with the first functional group.

  Further, the pressure-sensitive adhesive layer of the dicing tape in the dicing die-bonding film of the second present invention has a radical polymerizable functional group and a structural part derived from a crosslinking agent having a first functional group other than the radical polymerizable functional group, The radical-polymerizable functional group in the structural part derived from the cross-linking agent includes a polymer polymerized by a radical polymerization initiator having a second functional group capable of reacting with the first functional group.

  The polymer in the pressure-sensitive adhesive layer in the dicing die bond film of the second present invention is the polymer contained in the pressure-sensitive adhesive layer of the dicing tape in the dicing die bond film of the first present invention, the radical polymerization initiator (that is, the first A radical polymerization initiator having a second functional group capable of reacting with one functional group) is used to perform polymerization by irradiation with radiation. That is, the dicing die bond film of the second aspect of the present invention is obtained by irradiating the adhesive layer of the dicing die bond film of the first aspect of the present invention with radiation to cure it. In such a dicing die-bonding film of the second invention, since the progress of curing of the pressure-sensitive adhesive layer is suppressed even after a long period of time, the semiconductor chip with the adhesive layer after cleaving is not processed in the pickup step. A good pickup can be realized.

  One embodiment of the dicing die bond film of the present invention will be described below. FIG. 1 is a schematic sectional view showing an embodiment of the dicing die bond film of the first present invention. As shown in FIG. 1, a dicing die bond film 1 includes a dicing tape 10 and an adhesive layer 20 laminated on an adhesive layer 12 of the dicing tape 10, and in the manufacture of a semiconductor device, a semiconductor chip with an adhesive layer is provided. It can be used in the expanding step in the process of obtaining

  The dicing die bond film 1 has a disk shape having a size corresponding to the semiconductor wafer to be processed in the semiconductor device manufacturing process. The diameter of the dicing die bond film 1 is, for example, in the range of 345 to 380 mm (12 inch wafer compatible type), in the range of 245 to 280 mm (8 inch wafer compatible type), and in the range of 195 to 230 mm (6 inch wafer compatible type). ) Or within the range of 495 to 530 mm (18-inch wafer compatible type). The dicing tape 10 in the dicing die bond film 1 has a laminated structure including a base material 11 and an adhesive layer 12.

(Base material)
The base material in the dicing tape is an element that functions as a support in the dicing tape or the dicing die bond film. Examples of the substrate include a plastic substrate (particularly a plastic film). The base material may be a single layer or a laminate of the same or different base materials.

  Examples of the resin that constitutes the plastic substrate include low density polyethylene, linear low density polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, and homopolypropylene. , Polybutene, polymethylpentene, ethylene-vinyl acetate copolymer (EVA), ionomer, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene- Polyolefin resins such as butene copolymers and ethylene-hexene copolymers; polyurethanes; polyesters such as polyethylene terephthalate (PET), polyethylene naphthalate, polybutylene terephthalate (PBT); polycarbonates; polyimides; Polyetheretherketone; polyetherimides; aramid, polyamide such as wholly aromatic polyamide; polyphenyl sulfide; fluorine resin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, silicone resin, and the like. From the viewpoint of ensuring good heat shrinkability in the base material and easily maintaining the chip separation distance in the below-described normal temperature expanding step by utilizing partial heat shrinkage of the dicing tape or the base material, the base material is ethylene-acetic acid. It is preferable to include a vinyl copolymer as a main component.

  The main component of the base material is a component that occupies the largest mass ratio among the constituent components. The above resins may be used alone or in combination of two or more. When the pressure-sensitive adhesive layer is a radiation-curable pressure-sensitive adhesive layer as described below, the base material preferably has radiation transparency.

  When the substrate is a plastic film, the plastic film may be non-oriented, or may be oriented in at least one direction (uniaxial direction, biaxial direction, etc.). When oriented in at least one direction, the plastic film is heat shrinkable in at least one direction. If it has heat shrinkability, it is possible to heat shrink the outer peripheral portion of the semiconductor wafer of the dicing tape, and in this way the gap between the individual semiconductor chips with the adhesive layer is widened. Since it can be fixed, the semiconductor chip can be easily picked up. In order for the base material and the dicing tape to have isotropic heat shrinkability, the base material is preferably a biaxially oriented film. The plastic film oriented in at least one direction can be obtained by stretching an unstretched plastic film in at least one direction (uniaxial stretching, biaxial stretching, etc.).

  The base material and the dicing tape preferably have a heat shrinkage rate of 1 to 30%, more preferably 2 to 25%, in a heat treatment test conducted under conditions of a heating temperature of 100 ° C. and a heating time of 60 seconds. It is preferably 3 to 20%, particularly preferably 5 to 20%. The heat shrinkage rate is preferably a heat shrinkage rate in at least one of the MD direction and the TD direction.

  The pressure-sensitive adhesive layer side surface of the base material is, for example, corona discharge treatment, plasma treatment, sand mat processing, ozone exposure treatment, flame exposure treatment, high piezoelectric impact, for the purpose of enhancing the adhesiveness to the pressure-sensitive adhesive layer, the holding property, etc. Physical treatment such as exposure treatment and ionizing radiation treatment; chemical treatment such as chromic acid treatment; surface treatment such as easy adhesion treatment with a coating agent (undercoating agent) may be performed. Further, in order to impart antistatic ability, a conductive vapor deposition layer containing a metal, an alloy, an oxide thereof or the like may be provided on the surface of the substrate. The surface treatment for improving the adhesiveness is preferably applied to the entire surface of the base material on the side of the pressure-sensitive adhesive layer.

  The thickness of the substrate is preferably 40 μm or more, more preferably 50 μm or more, still more preferably 55 μm or more, from the viewpoint of ensuring the strength for the substrate to function as a support in the dicing tape and the dicing die bond film. Particularly preferably, it is 60 μm or more. From the viewpoint of realizing appropriate flexibility in the dicing tape and the dicing die bond film, the thickness of the base material is preferably 200 μm or less, more preferably 180 μm or less, still more preferably 150 μm or less.

(Adhesive layer)
As described above, the pressure-sensitive adhesive layer in the dicing die-bonding film has a structural unit derived from a crosslinking agent having a radically polymerizable functional group and a first functional group other than the radically polymerizable functional group, which is radically polymerized by the radically polymerizable functional group. And a radical polymerization initiator having a second functional group capable of reacting with the first functional group.

  Such a polymer is obtained by, for example, polymerizing (copolymerizing) a raw material monomer containing a monomer component having a functional group capable of reacting with the first functional group (for example, a third functional group described later) (precursor). After obtaining the polymer), the cross-linking agent (that is, a cross-linking agent having a radically polymerizable functional group and a first functional group) is added to the precursor polymer while maintaining the radically polymerizable property of the radically polymerizable functional group. It can be obtained by condensation reaction or addition reaction. In the pressure-sensitive adhesive layer containing the polymer thus obtained, the polymer maintains radical polymerizability, and therefore, when the pressure-sensitive adhesive layer is irradiated with radiation, polymerization may proceed to cure and the adhesive force may be lowered. Therefore, for example, when the dicing die-bonding film is used in the dicing step, the state in which the adhesive layer exhibits a relatively high adhesive force is used to suppress / prevent the floating of the adhesive layer from the adhesive layer. On the other hand, in the subsequent pick-up step, the pick-up can be easily performed by reducing the adhesive force of the pressure-sensitive adhesive layer.

  Further, the radical polymerization initiator, during the storage of the dicing die bond film before use, traps the cross-linking agent remaining in the pressure-sensitive adhesive layer, which was not incorporated in the polymer, the reaction between the cross-linking agent and the polymer Alternatively, it is possible to suppress curing of the pressure-sensitive adhesive layer during storage due to a reaction between cross-linking agents and the like, and at the time of irradiation of the pressure-sensitive adhesive layer, the pressure-sensitive adhesive acts on the radically polymerizable functional group in the polymer. The curing of the layer can be accelerated.

  Therefore, the dicing die bond film according to the above embodiment, even after a long period of time after production, the adhesive force of the pressure-sensitive adhesive layer is sufficiently reduced during irradiation of the pressure-sensitive adhesive layer, and as a result, after cutting. With regard to the semiconductor chip with the adhesive layer, the good pickup can be realized in the pickup step. In the present specification, the above "crosslinking agent having a radically polymerizable functional group and a first functional group other than the radically polymerizable functional group" may be referred to as "crosslinking agent X".

  The polymer in the pressure-sensitive adhesive layer has a radical polymerization functional group-derived structural unit derived from a crosslinking agent (crosslinking agent X) having a first functional group other than the radical polymerizable functional group It maintains the sex. That is, the crosslinking agent X before being incorporated into the polymer has a radically polymerizable functional group and a reactive functional group (first functional group) other than the radically polymerizable functional group. Examples of the radically polymerizable functional group include a carbon-carbon double bond having a radiation-polymerizable property, and examples thereof include a vinyl group, a propenyl group, an isopropenyl group, and a (meth) acryloyl group (acryloyl group, methacryloyl group). Can be mentioned. Of these, a (meth) acryloyl group is preferable. That is, the cross-linking agent X is preferably a cross-linking agent having a (meth) acryloyl group and a first functional group.

  The first functional group is a functional group other than the radically polymerizable functional group and is a functional group capable of reacting with the second functional group. Examples of the first functional group include a carboxy group, an epoxy group, an aziridyl group, a hydroxy group, and an isocyanate group. Among these, a functional group capable of reacting with a hydroxy group is preferable, and an isocyanate group is more preferable. That is, the cross-linking agent X is preferably a cross-linking agent having a functional group capable of reacting with a hydroxy group (particularly, an isocyanate group) and a radically polymerizable functional group. In order to maintain the radical polymerizability in the cross-linking agent X even after the cross-linking agent X is incorporated into the polymer, the first functional group is a functional group in the precursor polymer before the cross-linking agent X is incorporated ( For example, where the first functional group is required to have reactivity with a third functional group described later), the first functional group is a functional group in the precursor polymer (for example, a third functional group described later). It is necessary to have reactivity to both. Therefore, from the viewpoint of easy production or availability of such a precursor polymer, the crosslinking agent X, and the radical polymerization initiator having the second functional group, the above configuration is preferable.

  Therefore, it is particularly preferable that the cross-linking agent X is a cross-linking agent having a functional group capable of reacting with a hydroxy group (in particular, an isocyanate group) and a (meth) acryloyl group. That is, the structural part derived from the cross-linking agent X is preferably a structural part derived from a cross-linking agent having a functional group (in particular, an isocyanate group) capable of reacting with a hydroxy group and a (meth) acryloyl group.

  Specific examples of the cross-linking agent X include methacryloyl isocyanate, 2-acryloyloxyethyl isocyanate, 2-methacryloyloxyethyl isocyanate, and m-isopropenyl-α, α-dimethylbenzyl isocyanate. Among them, 2-acryloyloxyethyl isocyanate and 2-methacryloyloxyethyl isocyanate are preferable.

  The above-mentioned polymer contained in the pressure-sensitive adhesive layer is, for example, as described above, a precursor polymer obtained by polymerizing (copolymerizing) a raw material monomer containing a monomer component having a third functional group capable of reacting with the first functional group. Is obtained, and the third functional group in the precursor polymer is reacted with the first functional group in the crosslinking agent X. That is, the polymer contains a structural unit derived from the monomer component having a third functional group capable of reacting with the first functional group, and the structural unit derived from the monomer component and the structural unit derived from the crosslinking agent X are It is preferable that the first functional group and the third functional group are bound by a chemical reaction.

  Examples of the radically polymerizable functional group included in the monomer component having the third functional group include a radiation-polymerizable carbon-carbon double bond, and examples thereof include a vinyl group, a propenyl group, an isopropenyl group, and (meth). Examples thereof include an acryloyl group (acryloyl group, methacryloyl group). Of these, a (meth) acryloyl group is preferable. The third functional group is a functional group capable of reacting with the first functional group, and examples thereof include a carboxy group, an epoxy group, an aziridyl group, a hydroxy group, and an isocyanate group. Of these, a hydroxy group is preferable.

  Examples of the monomer component having the third functional group include a carboxyl group-containing monomer, an acid anhydride monomer, an epoxy group-containing monomer such as a glycidyl group-containing monomer, an aziridyl group-containing monomer, a hydroxy group-containing monomer, and an isocyanate group-containing monomer. Can be mentioned. As the monomer component having the third functional group, only one kind may be used, or two or more kinds may be used.

  Examples of the carboxy group-containing monomer include acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, crotonic acid and the like.

  Examples of the acid anhydride monomer include maleic anhydride and itaconic anhydride.

  Examples of the glycidyl group-containing monomer include glycidyl (meth) acrylate and methylglycidyl (meth) acrylate.

  Examples of the hydroxy group-containing monomer include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, Examples thereof include 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, and (4-hydroxymethylcyclohexyl) methyl (meth) acrylate.

  Examples of the isocyanate group-containing monomer include methacryloyl isocyanate, 2-acryloyloxyethyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl-α, α-dimethylbenzyl isocyanate and the like.

  Among these, the monomer having the third functional group is preferably a hydroxy group-containing monomer, and more preferably 2-hydroxyethyl (meth) acrylate. That is, it is preferable that the polymer contains a constituent unit derived from a hydroxy group-containing monomer (particularly, 2-hydroxyethyl (meth) acrylate).

  The proportion of the monomer component having the third functional group in all the monomer components excluding the cross-linking agent X for forming the polymer is such that the cross-linking agent X can be sufficiently incorporated into the polymer and the tackiness of the pressure-sensitive adhesive layer can be improved. From the viewpoint of maintaining the above, 5 to 40 mol% is preferable, and 10 to 30 mol% is more preferable.

  The molar ratio of the structural part derived from the cross-linking agent X to the structural unit derived from the monomer component having the third functional group is preferably 0.2 or more, more preferably 0.3 or more. The molar ratio is preferably 2.0 or less, more preferably 1.4 or less. When the above molar ratio is 0.2 or more, a sufficient amount of radically polymerizable functional groups can be introduced into the above polymer, and the effect of reducing the adhesive strength by radiation curing can be sufficiently exerted. When the above molar ratio is 2.0 or less, the amount of the crosslinking agent X remaining in the pressure-sensitive adhesive layer does not become excessive, and a better pickup can be realized in the pickup step.

  The pressure-sensitive adhesive layer preferably contains the above polymer as a base polymer (a polymer containing the largest amount by mass). The polymer in the pressure-sensitive adhesive layer is preferably an acrylic polymer. The acrylic polymer is a polymer containing a structural unit derived from an acrylic monomer (a monomer component having a (meth) acryloyl group in the molecule) as a structural unit of the polymer.

  It is preferable that the acrylic polymer is a polymer that contains the most constituent units derived from a (meth) acrylic acid ester in a mass ratio. The acrylic polymer may be used alone or in combination of two or more. In addition, in the present specification, “(meth) acryl” means “acryl” and / or “methacryl” (either or both of “acryl” and “methacryl”), and the same applies to others. .

  As said (meth) acrylic acid ester, the hydrocarbon group containing (meth) acrylic acid ester which may have an alkoxy group is mentioned, for example. Examples of the hydrocarbon group-containing (meth) acrylic acid ester include (meth) acrylic acid alkyl ester, (meth) acrylic acid cycloalkyl ester, and (meth) acrylic acid aryl ester. Examples of the (meth) acrylic acid alkyl ester include (meth) acrylic acid methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, Isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester (lauryl ester), tridecyl ester, tetradecyl ester , Hexadecyl ester, octadecyl ester, eicosyl ester and the like.

  Examples of the cycloalkyl ester of (meth) acrylic acid include cyclopentyl ester and cyclohexyl ester of (meth) acrylic acid. Examples of the (meth) acrylic acid aryl ester include phenyl ester and benzyl ester of (meth) acrylic acid. Examples of the hydrocarbon group-containing (meth) acrylic acid ester having an alkoxy group include those in which one or more hydrogen atoms in the hydrocarbon group in the above-mentioned hydrocarbon group-containing (meth) acrylic acid ester are substituted with an alkoxy group, Examples thereof include 2-methoxymethyl ester, 2-methoxyethyl ester, and 2-methoxybutyl ester of (meth) acrylic acid. The hydrocarbon group-containing (meth) acrylic acid ester which may have an alkoxy group may be used alone or in combination of two or more.

  The (meth) acrylic acid ester having a hydrocarbon group which may have an alkoxy group has a total number of carbon atoms in the ester portion (when it has an alkoxy group, the total number of carbon atoms in the alkoxy group) of 6 to 10 Is preferred. In particular, a hydrocarbon group-containing (meth) acrylic acid ester in which the total number of carbon atoms of the hydrocarbon group is 6 to 10 is preferable. In these cases, the progress of curing of the pressure-sensitive adhesive layer is suppressed even after a long period of time, while suppressing the floating between the pressure-sensitive adhesive layer and the adhesive layer in the expanding step and thereafter, and in the pickup step. It is possible to achieve both good pick-up properties.

  In order to appropriately express basic properties such as adhesiveness by the hydrocarbon group-containing (meth) acrylic acid ester which may have an alkoxy group in the pressure-sensitive adhesive layer, a crosslinking agent X for forming an acrylic polymer is used. The ratio of the hydrocarbon group-containing (meth) acrylic acid ester which may have an alkoxy group in all the monomer components except is preferably 40 mol% or more, more preferably 60 mol% or more.

  In addition, in the present specification, the monomer component is a compound having a radiation-polymerizable group at the stage of being incorporated into the polymer before irradiation of the pressure-sensitive adhesive layer with radiation (for example, a radical-polymerizable functional group and a first functional group). Crosslinking agent having a group) is not included.

  It is preferable that the acrylic polymer is copolymerized with the monomer component having the third functional group as described above. In addition to the monomer component having the third functional group, the acrylic polymer is a hydrocarbon group-containing (meth) acrylic that may have the alkoxy group for the purpose of modifying cohesive force, heat resistance, and the like. It may contain a constitutional unit derived from another monomer component copolymerizable with the acid ester. Examples of the other monomer components include functional group-containing monomers such as sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, and nitrogen atom-containing monomers. As the other monomer component, only one kind may be used, or two or more kinds may be used.

  Examples of the sulfonic acid group-containing monomer include styrenesulfonic acid, allylsulfonic acid, 2- (meth) acrylamido-2-methylpropanesulfonic acid, (meth) acrylamidopropanesulfonic acid, sulfopropyl (meth) acrylate, and (meth ) Acryloyloxynaphthalene sulfonic acid and the like can be mentioned.

  Examples of the phosphoric acid group-containing monomer include 2-hydroxyethylacryloyl phosphate.

  Examples of the nitrogen atom-containing monomer include morpholino group-containing monomers such as (meth) acryloylmorpholine, cyano group-containing monomers such as (meth) acrylonitrile, and amide group-containing monomers such as (meth) acrylamide.

  The monomer component used as the cross-linking agent X is used as the other monomer component (for example, when the monomer component having a third functional group is used as the other monomer component, A monomer component having a reactive first functional group) is not included.

  Among them, the morpholino group-containing monomer is preferable as the other monomer component. The morpholino group-containing monomer is preferably (meth) acryloylmorpholine. That is, the acrylic polymer preferably contains a structural unit derived from (meth) acryloylmorpholine.

  In order to properly express the basic properties such as the adhesiveness of the hydrocarbon group-containing (meth) acrylic acid ester which may have an alkoxy group in the pressure-sensitive adhesive layer 12, a crosslinking agent for forming an acrylic polymer The ratio of the other monomer components to all the monomer components except X is preferably 40 mol% or less (for example, 3 to 40 mol%), and more preferably 30 mol% or less (for example, 10 to 30 mol%).

  The acrylic polymer may contain a structural unit derived from a polyfunctional monomer copolymerizable with the monomer component forming the acrylic polymer in order to form a crosslinked structure in the polymer skeleton. Examples of the polyfunctional monomer include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, penta Erythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate (for example, polyglycidyl (meth) acrylate), polyester Examples thereof include monomers having a (meth) acryloyl group and another reactive functional group in the molecule such as (meth) acrylate and urethane (meth) acrylate. The polyfunctional monomers may be used alone or in combination of two or more. In order to properly develop the basic properties such as the adhesiveness of the hydrocarbon group-containing (meth) acrylic acid ester that may have an alkoxy group in the adhesive layer, all monomer components for forming the acrylic polymer are used. The proportion of the polyfunctional monomer in is preferably 40 mol% or less, more preferably 30 mol% or less.

  The mass average molecular weight of the acrylic polymer is preferably 300,000 or more, and more preferably 350,000 to 1,000,000. When the mass average molecular weight is 300,000 or more, the low-molecular weight substance in the pressure-sensitive adhesive layer tends to be small, and it is possible to further suppress contamination of the adhesive layer, the semiconductor wafer, or the like.

  The acrylic polymer is obtained by subjecting one or more monomer components containing an acrylic monomer to polymerization. Examples of the polymerization method include solution polymerization, emulsion polymerization, bulk polymerization and suspension polymerization.

  As described above, the pressure-sensitive adhesive layer contains the radical polymerization initiator having the second functional group capable of reacting with the first functional group. The second functional group is a functional group capable of reacting with the first functional group. Examples of the second functional group include a carboxy group, an epoxy group, an aziridyl group, a hydroxy group, an isocyanate group, and the like. Of these, a hydroxy group is preferable. That is, the radical polymerization initiator having the second functional group is preferably a hydroxy group-containing radical polymerization initiator. In order to maintain the radical polymerizability in the cross-linking agent X even after the cross-linking agent X is incorporated into the polymer, the first functional group is a functional group in the precursor polymer (for example, the third functional group). Whereas the second functional group and the functional group in the precursor polymer (for example, the third functional group) need to have reactivity with the first functional group as well. . Therefore, from the viewpoint of easy production or availability of such a precursor polymer, the crosslinking agent X, and the radical polymerization initiator having the second functional group, the above configuration is preferable.

  Examples of the combination of the first functional group and the second functional group include, for example, carboxy group and epoxy group, epoxy group and carboxy group, carboxy group and aziridyl group, aziridyl group and carboxy group, hydroxy group and isocyanate group, Examples thereof include an isocyanate group and a hydroxy group. Among these, a combination of a hydroxy group and an isocyanate group and a combination of an isocyanate group and a hydroxy group are preferable from the viewpoint of easy reaction tracking. In particular, as described above, it is preferable that the first functional group is a functional group capable of reacting with a hydroxy group (particularly, an isocyanate group) and the second functional group is a hydroxy group.

  Examples of the radical polymerization initiator having the second functional group include 1-hydroxycyclohexyl phenyl ketone (for example, trade name "Irgacure 184", manufactured by BASF), 2-methyl-2-hydroxypropiophenone (for example, Trade name "Irgacure 1173", manufactured by BASF), 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone (for example, trade name "Irgacure 2959", manufactured by BASF), trade name "Irgacure" 127 ", α-hydroxy-α, α'-dimethylacetophenone and the like.

  The content of the radical polymerization initiator having the second functional group in the pressure-sensitive adhesive layer is, for example, 0.05 to 20 parts by mass, preferably 0.1 to 10 parts by mass, relative to 100 parts by mass of the polymer. It is preferably 0.5 to 5 parts by mass.

  The pressure-sensitive adhesive layer may contain a crosslinking agent (other crosslinking agent) other than the crosslinking agent X. For example, when an acrylic polymer is used as the base polymer, the acrylic polymer can be crosslinked to further reduce the low molecular weight substance in the pressure-sensitive adhesive layer. Further, the mass average molecular weight of the acrylic polymer can be increased. Examples of the other crosslinking agent include polyisocyanate compounds, epoxy compounds, polyol compounds (polyphenol compounds, etc.), aziridine compounds, melamine compounds, and the like. When another crosslinking agent is used, the amount thereof is preferably about 5 parts by mass or less, and more preferably 0.1 to 5 parts by mass with respect to 100 parts by mass of the polymer.

  The pressure-sensitive adhesive layer is a pressure-sensitive adhesive layer (pressure-reducible pressure-sensitive adhesive layer) capable of intentionally reducing the pressure-sensitive adhesive force by an action from the outside in the process of using the dicing die-bonding film. That is, the pressure-sensitive adhesive layer in the dicing die bond film of the first aspect of the present invention is a pressure-sensitive adhesive layer capable of reducing its adhesive strength. Moreover, the pressure-sensitive adhesive layer obtained by polymerizing the polymer in the pressure-sensitive adhesive layer by irradiation with the radical polymerization initiator having the second functional group (that is, in the dicing die-bonding film of the second invention). The pressure-sensitive adhesive layer) is a pressure-sensitive adhesive layer (non-tackiness-reducing pressure-sensitive adhesive layer) that has little or no decrease in the adhesive force due to an external action in the process of using the dicing die bond film. The pressure-sensitive adhesive layer in the dicing die-bonding film may be a pressure-sensitive adhesive force-reducible pressure-sensitive adhesive layer or a non-pressure-sensitive adhesive type pressure-sensitive adhesive layer, and is a semiconductor wafer that is diced using the dicing die-bonding film. Can be appropriately selected depending on the method and conditions for individualizing the above.

  Since the pressure-sensitive adhesive layer is a pressure-sensitive adhesive layer capable of reducing the pressure-sensitive adhesive strength, the pressure-sensitive adhesive layer shows a relatively high pressure-sensitive adhesive strength and a relatively low pressure-sensitive adhesive strength in the manufacturing process and the use process of the dicing die bond film. It is possible to selectively use and. For example, when the adhesive layer is attached to the adhesive layer of the dicing tape in the manufacturing process of the dicing die bond film, or when the dicing die bond film is used in the dicing process, the adhesive layer shows a relatively high adhesive force. It is possible to suppress and prevent the floating of the adherend such as the adhesive layer from the adhesive layer by using, while thereafter picking up the semiconductor chip with the adhesive layer from the dicing tape of the dicing die bond film. In the pickup step, the pickup can be easily performed by reducing the adhesive force of the adhesive layer.

  The pressure-sensitive adhesive layer (for example, the pressure-sensitive adhesive layer 12) in the dicing die bond film of the present invention is a pressure-sensitive adhesive layer (radiation-curable pressure-sensitive adhesive layer) formed of a radiation-curable pressure-sensitive adhesive containing the above polymer. As the radiation-curable pressure-sensitive adhesive, for example, a pressure-sensitive adhesive that can be cured by irradiation with electron rays, ultraviolet rays, α rays, β rays, γ rays, or X rays can be used. A pressure-sensitive adhesive (ultraviolet curable pressure-sensitive adhesive) can be particularly preferably used. In the present specification, the “radiation-curable pressure-sensitive adhesive layer” means a pressure-sensitive adhesive layer formed from a radiation-curable pressure-sensitive adhesive, and a radiation-unirradiated radiation-unirradiated radiation-curable pressure-sensitive adhesive layer and the pressure-sensitive adhesive. It includes both a radiation-cured radiation-curable pressure-sensitive adhesive layer after the agent layer has been cured by irradiation with radiation.

  The pressure-sensitive adhesive layer contains, in addition to the above-mentioned components, additives used in known or common pressure-sensitive adhesive layers such as a crosslinking accelerator, a tackifier, an antiaging agent, and a coloring agent (pigment, dye, etc.). May be. Examples of the colorant include compounds that are colored by irradiation with radiation. When the compound contains a compound that is colored by irradiation with radiation, only the irradiated portion can be colored. The compound that is colored by irradiation with radiation is a compound that is colorless or light-colored before irradiation with radiation, but becomes colored by irradiation with radiation, and examples thereof include leuco dyes. The amount of the compound colored by the irradiation of radiation is not particularly limited and can be appropriately selected.

  The thickness of the pressure-sensitive adhesive layer is not particularly limited, but from the viewpoint of balancing the adhesive force of the pressure-sensitive adhesive layer to the adhesive layer before and after radiation curing, it is preferably about 1 to 50 μm, more preferably 2 to 30 μm, It is preferably 5 to 25 μm.

(Adhesive layer)
The adhesive layer has a function as a thermosetting adhesive for die bonding, and also has an adhesive function for holding a work such as a semiconductor wafer and a frame member such as a ring frame, if necessary. . The adhesive layer can be cleaved by applying a tensile stress, and is used by cleaving by applying a tensile stress.

  The adhesive layer and the adhesive constituting the adhesive layer may contain a thermosetting resin and, for example, a thermoplastic resin as a binder component, and a thermosetting functional group capable of reacting with the curing agent to form a bond. It may contain a thermoplastic resin having a group. When the adhesive forming the adhesive layer contains a thermoplastic resin having a thermosetting functional group, the adhesive does not need to contain a thermosetting resin (epoxy resin or the like). The adhesive layer may have a single-layer structure or a multi-layer structure.

  Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin. , A thermoplastic polyimide resin, a polyamide resin such as 6-nylon or 6,6-nylon, a phenoxy resin, an acrylic resin, a saturated polyester resin such as PET or PBT, a polyamideimide resin, and a fluororesin. The thermoplastic resins may be used alone or in combination of two or more. As the thermoplastic resin, an acrylic resin is preferable because it has a small amount of ionic impurities and high heat resistance, so that it is easy to secure the bonding reliability by the adhesive layer.

  It is preferable that the acrylic resin contains a structural unit derived from a hydrocarbon group-containing (meth) acrylic acid ester which may have an alkoxy group as a structural unit having the largest mass ratio. As the hydrocarbon group-containing (meth) acrylic acid ester which may have the alkoxy group, for example, carbonization which may have the alkoxy group which forms the acrylic polymer which may be contained in the above-mentioned pressure-sensitive adhesive layer. What was illustrated as a hydrogen-group containing (meth) acrylic acid ester is mentioned.

  The acrylic resin may include a structural unit derived from another monomer component that is copolymerizable with the hydrocarbon group-containing (meth) acrylic acid ester that may have an alkoxy group. Examples of the other monomer component include a functional group such as a carboxy group-containing monomer, an acid anhydride monomer, a hydroxy group-containing monomer, a glycidyl group-containing monomer, a sulfonic acid group-containing monomer, a phosphoric acid group-containing monomer, acrylamide, and acrylonitrile. Examples thereof include monomers and various polyfunctional monomers, and specifically, those exemplified as other monomer components constituting the acrylic polymer that can be contained in the pressure-sensitive adhesive layer can be used.

  When the adhesive layer contains a thermosetting resin together with a thermoplastic resin, examples of the thermosetting resin include epoxy resin, phenol resin, amino resin, unsaturated polyester resin, polyurethane resin, silicone resin, thermosetting resin. Examples include polyimide resins. The thermosetting resin may be used alone or in combination of two or more. Epoxy resin is preferable as the thermosetting resin because the content of ionic impurities and the like that may cause corrosion of the semiconductor chip to be die-bonded tends to be small. Further, a phenol resin is preferable as the curing agent for the epoxy resin.

  Examples of the epoxy resin include bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type, ortho Examples thereof include cresol novolac type, trishydroxyphenylmethane type, tetraphenylolethane type, hydantoin type, trisglycidyl isocyanurate type and glycidylamine type epoxy resins. Among them, novolac type epoxy resin, biphenyl type epoxy resin, trishydroxyphenylmethane type epoxy resin, and tetraphenylolethane type epoxy resin are preferable because they are highly reactive with a phenol resin as a curing agent and have excellent heat resistance.

  Examples of the phenol resin that can act as a curing agent for the epoxy resin include novolac type phenol resin, resol type phenol resin, and polyoxystyrene such as polyparaoxystyrene. Examples of the novolac type phenolic resin include phenol novolac resin, phenol aralkyl resin, cresol novolac resin, tert-butylphenol novolac resin, nonylphenol novolac resin and the like. The above phenolic resins may be used alone or in combination of two or more. Among them, the phenol novolac resin and the phenol aralkyl resin are preferable from the viewpoint that they tend to improve the connection reliability of the adhesive when used as a curing agent for an epoxy resin as an adhesive for die bonding.

  From the viewpoint of sufficiently advancing the curing reaction between the epoxy resin and the phenol resin in the adhesive layer, the phenol resin preferably has a hydroxyl group in the phenol resin of 0.1 per equivalent of the epoxy group in the epoxy resin component. It is contained in an amount of 5 to 2.0 equivalents, and more preferably 0.7 to 1.5 equivalents.

  When the adhesive layer contains a thermosetting resin, the content ratio of the thermosetting resin, from the viewpoint of appropriately expressing the function as a thermosetting adhesive in the adhesive layer, to the total mass of the adhesive layer. On the other hand, 5 to 60 mass% is preferable, and 10 to 50 mass% is more preferable.

  When the adhesive layer contains a thermoplastic resin having a thermosetting functional group, for example, a thermosetting functional group-containing acrylic resin can be used as the thermoplastic resin. The acrylic resin in the thermosetting functional group-containing acrylic resin preferably has a structural unit derived from a hydrocarbon group-containing (meth) acrylic acid ester which may have an alkoxy group as the most structural unit in the mass ratio. Including. As the hydrocarbon group-containing (meth) acrylic acid ester which may have the alkoxy group, for example, carbonization which may have the alkoxy group which forms the acrylic polymer which may be contained in the above-mentioned pressure-sensitive adhesive layer. What was illustrated as a hydrogen-group containing (meth) acrylic acid ester is mentioned.

  On the other hand, examples of the thermosetting functional group in the thermosetting functional group-containing acrylic resin include glycidyl group, carboxy group, hydroxy group, and isocyanate group. Of these, a glycidyl group and a carboxy group are preferable. That is, as the thermosetting functional group-containing acrylic resin, glycidyl group-containing acrylic resin and carboxy group-containing acrylic resin are particularly preferable.

  Further, it is preferable to include a curing agent together with the thermosetting functional group-containing acrylic resin, and the curing agent is exemplified as a cross-linking agent that can be contained in the above-mentioned radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer. There are things. When the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group, it is preferable to use a polyphenol compound as a curing agent, and for example, the above-mentioned various phenol resins can be used.

  Regarding the adhesive layer before being cured for die bonding, in order to achieve a certain degree of cross-linking, for example, by reacting with a functional group or the like at the molecular chain end of the above-mentioned resin that can be contained in the adhesive layer. It is preferable to incorporate a polyfunctional compound capable of binding as a crosslinking component into the resin composition for forming an adhesive layer. Such a configuration is preferable from the viewpoint of improving the adhesive properties of the adhesive layer at high temperatures and from the viewpoint of improving heat resistance.

  Examples of the crosslinking component include polyisocyanate compounds. Examples of the polyisocyanate compound include tolylene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1,5-naphthalene diisocyanate, and an adduct of polyhydric alcohol and diisocyanate. Further, as the above-mentioned cross-linking component, another polyfunctional compound such as an epoxy resin may be used in combination with the polyisocyanate compound.

  The content of the cross-linking component in the adhesive layer-forming resin composition is from the viewpoint of improving the cohesive strength of the adhesive layer formed with respect to 100 parts by mass of the resin having the functional group capable of reacting with the cross-linking component and binding. From the viewpoint of improving the adhesive strength of the formed adhesive layer, it is preferably 7 parts by mass or less.

  The adhesive layer preferably contains a filler. By blending the filler in the adhesive layer, the electrical properties of the adhesive layer, and the physical properties such as thermal conductivity and elastic modulus can be adjusted. Examples of the filler include an inorganic filler and an organic filler, and the inorganic filler is particularly preferable.

  Examples of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whiskers, boron nitride, and crystals. In addition to high quality silica and amorphous silica, simple metals such as aluminum, gold, silver, copper and nickel, alloys, amorphous carbon black and graphite can be used. The filler may have various shapes such as a spherical shape, a needle shape, and a flake shape. As the filler, only one kind may be used, or two or more kinds may be used.

  The average particle size of the filler is preferably 0.005 to 10 μm, more preferably 0.005 to 1 μm. When the average particle diameter is 0.005 μm or more, wettability and adhesiveness to an adherend such as a semiconductor wafer are further improved. When the average particle diameter is 10 μm or less, the effect of the filler added for imparting the above respective properties can be made sufficient, and heat resistance can be ensured. The average particle size of the filler can be determined using, for example, a photometric particle size distribution meter (for example, trade name "LA-910", manufactured by Horiba Ltd.).

  The adhesive layer may contain other components as needed. Examples of the other component include a curing catalyst, a flame retardant, a silane coupling agent, an ion trap agent, and a dye. Only one kind of the above-mentioned other additives may be used, or two or more kinds thereof may be used.

  Examples of the flame retardant include antimony trioxide, antimony pentoxide, brominated epoxy resin and the like.

  Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, and the like.

  Examples of the ion trapping agent include hydrotalcites, bismuth hydroxide, hydrous antimony hydroxide (for example, "IXE-300" manufactured by Toagosei Co., Ltd.), zirconium phosphate having a specific structure (for example, manufactured by Toagosei Co., Ltd.). “IXE-100”), magnesium silicate (for example, “Kyoward 600” manufactured by Kyowa Chemical Industry Co., Ltd.), aluminum silicate (for example, “Kyoward 700” manufactured by Kyowa Chemical Industry Co., Ltd.), and the like.

  A compound capable of forming a complex with a metal ion can also be used as the ion trap agent. Examples of such compounds include triazole compounds, tetrazole compounds, and bipyridyl compounds. Of these, triazole compounds are preferable from the viewpoint of the stability of the complex formed with the metal ion.

  Examples of the triazole-based compound include 1,2,3-benzotriazole, 1- {N, N-bis (2-ethylhexyl) aminomethyl} benzotriazole, carboxybenzotriazole, 2- (2-hydroxy-5-). Methylphenyl) benzotriazole, 2- (2-hydroxy-3,5-di-t-butylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3-t-butyl-5-methylphenyl)- 5-chlorobenzotriazole, 2- (2-hydroxy-3,5-di-t-amylphenyl) benzotriazole, 2- (2-hydroxy-5-t-octylphenyl) benzotriazole, 6- (2-benzo Triazolyl) -4-t-octyl-6'-t-butyl-4'-methyl-2,2'-methylenebisphe , 1- (2 ', 3'-hydroxypropyl) benzotriazole, 1- (1,2-dicarboxydiethyl) benzotriazole, 1- (2-ethylhexylaminomethyl) benzotriazole, 2,4-di- t-pentyl-6-{(H-benzotriazol-1-yl) methyl} phenol, 2- (2-hydroxy-5-t-butylphenyl) -2H-benzotriazole, 3- (2H-benzotriazole-2) -Yl) -5- (1,1-dimethylethyl) -4-hydroxy, octyl-3- [3-t-butyl-4-hydroxy-5- (5-chloro-2H-benzotriazol-2-yl) Phenyl] propionate, 2-ethylhexyl-3- [3-t-butyl-4-hydroxy-5- (5-chloro-2H-benzotriazole-2 Yl) phenyl] propionate, 2- (2H-benzotriazol-2-yl) -6- (1-methyl-1-phenylethyl) -4- (1,1,3,3-tetramethylbutyl) phenol, 2 -(2H-benzotriazol-2-yl) -4-t-butylphenol, 2- (2-hydroxy-5-methylphenyl) benzotriazole, 2- (2-hydroxy-5-t-octylphenyl) -benzotriazole , 2- (3-t-butyl-2-hydroxy-5-methylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3,5-di-t-amylphenyl) benzotriazole, 2- ( 2-hydroxy-3,5-di-t-butylphenyl) -5-chloro-benzotriazole, 2- [2-hydroxy-3,5-di (1,1- Dimethylbenzyl) phenyl] -2H-benzotriazole, 2,2'-methylenebis [6- (2H-benzotriazol-2-yl) -4- (1,1,3,3-tetramethylbutyl) phenol], 2 -[2-Hydroxy-3,5-bis (α, α-dimethylbenzyl) phenyl] -2H-benzotriazole, methyl-3- [3- (2H-benzotriazol-2-yl) -5-t-butyl -4-Hydroxyphenyl] propionate and the like can be mentioned.

  Further, a predetermined hydroxyl group-containing compound such as a quinol compound, a hydroxyanthraquinone compound or a polyphenol compound can also be used as the ion trap agent. Specific examples of such a hydroxyl group-containing compound include 1,2-benzenediol, alizarin, anthralphine, tannin, gallic acid, methyl gallate, and pyrogallol.

  The thickness (total thickness in the case of a laminated body) of the adhesive layer is not particularly limited, but is, for example, 1 to 200 μm. The upper limit is preferably 100 μm, more preferably 80 μm. The lower limit is preferably 3 μm, more preferably 5 μm.

  In the dicing die bond film 1, the peeling force between the pressure-sensitive adhesive layer and the adhesive layer in the T-type peeling test under the conditions of a temperature of 23 ° C. and a peeling speed of 300 mm / min is 0.3 N / 20 mm or more. It is preferably 0.5 N / 20 mm or more, more preferably 0.7 N / 20 mm or more. When the peeling force is 0.3 N / 20 mm or more, the adhesiveness between the pressure-sensitive adhesive layer and the adhesive layer can be made moderate, and when the expanding step is performed without radiation curing, the expanding step Also, it is easy to suppress the peeling (floating) between the pressure-sensitive adhesive layer and the adhesive layer thereafter. Further, the higher the peeling force is, the more preferable, but the upper limit thereof may be, for example, 10 N / 20 mm, 5.0 N / 20 mm, or 3.0 N / 20 mm. In the dicing die bond film of the second aspect of the present invention, it is preferable that the release force of the pressure-sensitive adhesive layer before radiation curing (the release force in the T-type release test before ultraviolet curing) is the above value.

  In the dicing die bond film 1, in the T-type peeling test under the conditions of a temperature of 23 ° C. and a peeling speed of 300 mm / min, the peeling force between the adhesive layer and the adhesive layer after the initial radiation curing (“UV curing”). The peeling force (initial value) in the subsequent T-type peeling test) is preferably 0.3 N / 20 mm or less, and more preferably 0.2 N / 20 mm or less. When the peeling force is 0.3 N / 20 mm or less, it becomes easy to realize good pickup in the pickup step performed after radiation curing. The peeling force of the pressure-sensitive adhesive layer after radiation curing in the dicing die bond film 1 after storage at 50 ° C. for 1 week (may be referred to as “peeling force (time) in T-type peeling test after UV curing”). Is preferably the above value. Further, it is preferable that the peeling force of the pressure-sensitive adhesive layer in the dicing die-bonding film of the second aspect of the present invention (peeling force in a T-type peeling test after UV curing (aging)) is the above value.

  The T-type peel test is performed using a tensile tester (trade name "Autograph AGS-J", manufactured by Shimadzu Corporation). The sample piece used for the test can be manufactured as follows. After a backing tape (trade name "BT-315", manufactured by Nitto Denko Corporation) is attached to the adhesive layer side of the dicing die bond film, a test piece having a width of 50 mm and a length of 120 mm is cut out.

In the dicing die bond film of the present invention, the peeling force increase rate calculated by the following formula is preferably 30% or less, more preferably 25% or less, and further preferably 20% or less. When the increase rate of the peeling force is 30% or less, a good pickup can be realized for the semiconductor chip with the adhesive layer after cleaving, even after a long time has passed after the manufacturing.
Peel force increase rate (%) = Peel force in T-type peel test after UV curing (age) (N / 20 mm) / Peel force in T-type peel test after UV curing (initial) (N / 20 mm) × 100

  The dicing die bond film may have a separator. Specifically, for each dicing die bond film, it may be in the form of a sheet having a separator, or the separator is long and a plurality of dicing die bond films are arranged thereon and the separator is wound. It may be in the form of a roll.

  The separator is an element for covering and protecting the surface of the adhesive layer of the dicing die bond film, and is peeled off from the film when the dicing die bond film is used. Examples of the separator include a polyethylene terephthalate (PET) film, a polyethylene film, a polypropylene film, a plastic film and a paper surface-coated with a release agent such as a fluorine-based release agent or a long-chain alkyl acrylate-based release agent. The thickness of the separator is, for example, 5 to 200 μm.

  The dicing die bond film 1 which is one embodiment of the dicing die bond film of the present invention is manufactured, for example, as follows.

  The dicing die bond film 1 which is one embodiment of the dicing die bond film of the present invention is manufactured, for example, as follows.

  First, the base material 11 can be obtained by forming a film by a known or common film forming method. Examples of the film forming method include a calender film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, and a dry lamination method.

  Next, after a composition (adhesive composition) for forming the adhesive layer 12 containing an adhesive and a solvent for forming the adhesive layer 12 is applied on the base material 11 to form a coating film, If necessary, the pressure-sensitive adhesive layer 12 can be formed by solidifying the coating film by desolvation or curing. Examples of the coating method include known or common coating methods such as roll coating, screen coating, and gravure coating. The desolvation conditions are, for example, a temperature of 80 to 150 ° C. and a time of 0.5 to 5 minutes.

  Alternatively, the pressure-sensitive adhesive layer 12 may be formed by coating the pressure-sensitive adhesive composition on the separator to form a coating film and then solidifying the coating film under the above-mentioned solvent removal conditions. Then, the pressure-sensitive adhesive layer 12 is attached to the base material 11 together with the separator. The dicing tape 10 can be manufactured as described above.

  Regarding the adhesive layer 20, first, a composition (adhesive composition) for forming the adhesive layer 20 containing a resin, a filler, a curing catalyst, a solvent and the like is prepared. Next, the adhesive composition is applied onto the separator to form a coating film, and then the coating film is solidified by desolvation or curing, if necessary, to form the adhesive layer 20. The coating method is not particularly limited, and examples thereof include known or commonly used coating methods such as roll coating, screen coating, and gravure coating. The desolvation conditions are, for example, a temperature of 70 to 160 ° C. and a time of 1 to 5 minutes.

  Subsequently, the separators are peeled off from the dicing tape 10 and the adhesive layer 20, respectively, and the adhesive layer 20 and the pressure-sensitive adhesive layer 12 are bonded to each other so that they become a bonding surface. The bonding can be performed by pressure bonding, for example. At this time, the laminating temperature is not particularly limited, and is preferably 30 to 50 ° C., more preferably 35 to 45 ° C., for example. The linear pressure is not particularly limited, and is preferably 0.1 to 20 kgf / cm, more preferably 1 to 10 kgf / cm, for example.

  As described above, for example, the dicing die bond film 1 shown in FIG. 1 can be manufactured.

  In one embodiment of the dicing die bond film of the second invention, for example, with respect to the dicing die bond film 1 obtained as described above, for example, the adhesive layer 12 is irradiated with radiation from the base material 11 side. It can be prepared by curing the pressure-sensitive adhesive layer. The irradiation amount is, for example, 50 to 500 mJ, preferably 100 to 300 mJ. In the dicing die-bonding film, the region where radiation is applied (irradiation region R) is usually the region in the adhesive layer 12 excluding the peripheral portion in the adhesive layer 20 bonding region. When the irradiation region R is partially provided, it can be performed through a photomask having a pattern corresponding to the region excluding the irradiation region R. In addition, a method of irradiating the radiation spotwise to form the irradiation region R can also be mentioned.

[Semiconductor Device Manufacturing Method]
A semiconductor device can be manufactured using the dicing die bond film of the present invention. Specifically, a step of attaching a divided body of a semiconductor wafer including a plurality of semiconductor chips or a semiconductor wafer that can be singulated into a plurality of semiconductor chips to the adhesive layer side of the dicing die bond film of the present invention (“ Sometimes referred to as "Step A"), under relatively low temperature conditions, the dicing tape in the dicing die bond film of the present invention is expanded, and at least the adhesive layer is cleaved to obtain a semiconductor chip with an adhesive layer. The step of obtaining (sometimes referred to as “step B”) and the step of expanding the dicing tape under relatively high temperature conditions to widen the gap between the semiconductor chips with the adhesive layer (“step C”). May be referred to as “step D”) and a step of picking up the semiconductor chip with the adhesive layer (may be referred to as “step D”). The production method, it is possible to manufacture a semiconductor device. 2 to 11 show steps in a method for manufacturing a semiconductor device using the dicing die bond film 1, but instead of the dicing die bond film 1 which is the dicing die bond film of the first present invention, the second book is used. The dicing die bond film of the invention may be used.

  The divided body of the semiconductor wafer including the plurality of semiconductor chips used in the process A or the semiconductor wafer that can be divided into a plurality of semiconductor chips can be obtained as follows. First, as shown in FIGS. 2A and 2B, the dividing groove 30a is formed in the semiconductor wafer W (dividing groove forming step). The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) are already formed on the first surface Wa side of the semiconductor wafer W, and a wiring structure and the like (not shown) necessary for the semiconductor element are already formed on the first surface Wa. Has been done.

  Then, after the wafer processing tape T1 having the adhesive surface T1a is attached to the second surface Wb side of the semiconductor wafer W, the first wafer of the semiconductor wafer W is held in the state where the semiconductor wafer W is held by the wafer processing tape T1. The dividing groove 30a having a predetermined depth is formed on the surface Wa side by using a rotating blade such as a dicing device. The dividing groove 30a is a space for separating the semiconductor wafer W into semiconductor chips (in FIGS. 2 to 4, the dividing groove 30a is schematically represented by a thick line).

  Next, as shown in FIG. 2C, a wafer processing tape T2 having an adhesive surface T2a is attached to the first surface Wa side of the semiconductor wafer W, and the wafer processing tape T1 from the semiconductor wafer W is attached. And peeling.

  Next, as shown in FIG. 2D, with the semiconductor wafer W held on the wafer processing tape T2, the semiconductor wafer W is thinned by grinding from the second surface Wb until the semiconductor wafer W reaches a predetermined thickness. (Wafer thinning process). The grinding process can be performed using a grinding device equipped with a grinding wheel. By this wafer thinning process, in the present embodiment, the semiconductor wafer 30A that can be divided into a plurality of semiconductor chips 31 is formed.

  Specifically, the semiconductor wafer 30A has a portion (coupling portion) that couples portions of the wafer to be singulated into the plurality of semiconductor chips 31 on the second surface Wb side. The thickness of the connecting portion in the semiconductor wafer 30A, that is, the distance between the second surface Wb of the semiconductor wafer 30A and the tip of the dividing groove 30a on the second surface Wb side is, for example, 1 to 30 μm, and preferably 3 to 20 μm. Is.

(Process A)
In step A, a divided body of a semiconductor wafer including a plurality of semiconductor chips, or a semiconductor wafer that can be singulated into a plurality of semiconductor chips is attached to the adhesive layer 20 side of the dicing die bond film 1.

  In one embodiment in step A, as shown in FIG. 3A, the semiconductor wafer 30A held by the wafer processing tape T2 is attached to the adhesive layer 20 of the dicing die bond film 1. Thereafter, as shown in FIG. 3B, the wafer processing tape T2 is peeled off from the semiconductor wafer 30A.

After the semiconductor wafer 30A is attached to the adhesive layer 20, the adhesive layer 12 may be irradiated with radiation such as ultraviolet rays from the base material 11 side. Irradiation dose is, for example, 50 to 500 mJ / cm ^2, preferably 100~300mJ / cm ^2. In the dicing die bond film 1, the region (irradiation region R shown in FIG. 1) where irradiation is performed as a measure for reducing the adhesive strength of the pressure-sensitive adhesive layer 12 is, for example, the periphery of the adhesive layer 20 in the bonding region of the pressure-sensitive adhesive layer 12. This is an area excluding parts.

(Process B)
In step B, the dicing tape 10 in the dicing die bond film 1 is expanded under relatively low temperature conditions, and at least the adhesive layer 20 is cleaved to obtain a semiconductor chip with an adhesive layer.

  In one embodiment in the process B, first, the ring frame 41 is attached onto the adhesive layer 12 of the dicing tape 10 in the dicing die bond film 1, and then the semiconductor wafer 30A is attached as shown in FIG. 4A. The dicing die bond film 1 is fixed to the holder 42 of the expanding device.

  Next, a first expanding step (cool expanding step) under relatively low temperature conditions is performed as shown in FIG. 4B, and the semiconductor wafer 30A is singulated into a plurality of semiconductor chips 31. The adhesive layer 20 of the dicing die bond film 1 is cut into small pieces of adhesive layer 21 to obtain the semiconductor chip 31 with the adhesive layer.

  In the cool expanding step, the hollow cylindrical push-up member 43 provided in the expanding device is brought into contact with the dicing tape 10 at the lower side of the dicing die bond film 1 in the figure to raise the dicing die bond film of the semiconductor wafer 30A. The first dicing tape 10 is expanded so as to be stretched in two-dimensional directions including the radial direction and the circumferential direction of the semiconductor wafer 30A.

  This expanding is performed under the condition that a tensile stress within the range of 15 to 32 MPa, preferably 20 to 32 MPa is generated in the dicing tape 10. The temperature condition in the cool expanding step is, for example, 0 ° C. or lower, preferably −20 to −5 ° C., and more preferably −15 to −5 ° C. The expanding speed in the cool expanding step (the speed at which the push-up member 43 is raised) is preferably 0.1 to 400 mm / sec, more preferably 0.3 to 300 mm / sec. The amount of expansion in the cool expanding step is preferably 1 to 20 mm, more preferably 2 to 16 mm.

  In the process B, when the semiconductor wafer 30A that can be singulated into a plurality of semiconductor chips is used, the thin and fragile portions of the semiconductor wafer 30A are cleaved, and the semiconductor chips 31 are singulated. At the same time, in the process B, the deformation is suppressed in each region where each semiconductor chip 31 is in close contact with the adhesive layer 20 in close contact with the adhesive layer 12 of the expanded dicing tape 10, while the semiconductor chip is suppressed. A tensile stress generated in the dicing tape 10 acts on the portion of the dividing groove between the portions 31 located in the vertical direction in the drawing without such deformation suppressing action. As a result, the portions of the adhesive layer 20 that are located in the vertical direction of the dividing grooves between the semiconductor chips 31 will be cut. After the cleaving by the expanding, as shown in FIG. 4C, the push-up member 43 is lowered to release the expanded state of the dicing tape 10.

(Process C)
In step C, the dicing tape 10 is expanded under relatively high temperature conditions to widen the gap between the semiconductor chips with the adhesive layer.

  In one embodiment in step C, first, the second expanding step (normal temperature expanding step) under relatively high temperature conditions is performed as shown in FIG. Increase the distance (distance).

  In step C, the hollow cylindrical push-up member 43 included in the expanding device is moved up again to expand the dicing tape 10 of the dicing die bond film 1. The temperature condition in the second expanding step is, for example, 10 ° C or higher, preferably 15 to 30 ° C. The expanding speed (the speed at which the push-up member 43 is raised) in the second expanding step is, for example, 0.1 to 10 mm / sec, preferably 0.3 to 1 mm / sec. In addition, the expanding amount in the second expanding step is, for example, 3 to 16 mm. In step C, the separation distance of the semiconductor chip 31 with the adhesive layer is widened so that the semiconductor chip 31 with the adhesive layer can be appropriately picked up from the dicing tape 10 in the pickup step described later. After the separation distance is widened by expanding, as shown in FIG. 5B, the push-up member 43 is lowered to release the expanded state of the dicing tape 10.

  From the viewpoint of suppressing the distance between the semiconductor chips 31 with the adhesive layer on the dicing tape 10 from being narrowed after the expanded state is released, a portion of the dicing tape 10 outside the semiconductor chip 31 holding region is released before the expanded state is released. It is preferable to heat and shrink.

  After the step C, a cleaning step of cleaning the semiconductor chip 31 side of the dicing tape 10 with the adhesive layer-attached semiconductor chip 31 using a cleaning liquid such as water may be included if necessary.

(Process D)
In step D (pickup step), the individual semiconductor chips with the adhesive layer are picked up. In the embodiment of the process D, the semiconductor chip 31 with the adhesive layer is picked up from the dicing tape 10 as shown in FIG. For example, with respect to the semiconductor chip 31 with the adhesive layer to be picked up, after the pin member 44 of the pickup mechanism is raised and pushed up through the dicing tape 10 on the lower side of the dicing tape 10 in FIG. To do. In the pickup process, the push-up speed of the pin member 44 is, for example, 1 to 100 mm / sec, and the push-up amount of the pin member 44 is, for example, 50 to 3000 μm.

  The method for manufacturing a semiconductor device may include steps other than steps A to D. For example, in one embodiment, as shown in FIG. 7A, the picked-up adhesive layer-equipped semiconductor chip 31 is temporarily fixed to the adherend 51 via the adhesive layer 21 (temporary fixing step). ).

  Examples of the adherend 51 include a lead frame, a TAB (Tape Automated Bonding) film, a wiring board, and a separately manufactured semiconductor chip. The shear adhesive strength at 25 ° C. when the adhesive layer 21 is temporarily fixed is preferably 0.2 MPa or more, and more preferably 0.2 to 10 MPa with respect to the adherend 51. The configuration in which the shear adhesive force of the adhesive layer 21 is 0.2 MPa or more is a bonding surface between the adhesive layer 21 and the semiconductor chip 31 or the adherend 51 due to ultrasonic vibration or heating in the wire bonding step described later. It is possible to suppress shear deformation and perform wire bonding appropriately. Further, the shear adhesive strength at 175 ° C. when the adhesive layer 21 is temporarily fixed is preferably 0.01 MPa or more, and more preferably 0.01 to 5 MPa with respect to the adherend 51.

  Next, as shown in FIG. 7B, the electrode pads (not shown) of the semiconductor chip 31 and the terminal portions (not shown) of the adherend 51 are electrically connected via the bonding wires 52 ( Wire bonding process).

  The connection between the electrode pad of the semiconductor chip 31 and the terminal portion of the adherend 51 and the bonding wire 52 can be realized by ultrasonic welding accompanied by heating, and is performed so as not to thermally cure the adhesive layer 21. As the bonding wire 52, for example, a gold wire, an aluminum wire, a copper wire or the like can be used. The wire heating temperature in wire bonding is, for example, 80 to 250 ° C, preferably 80 to 220 ° C. The heating time is from several seconds to several minutes.

  Next, as shown in FIG. 7C, the semiconductor chip 31 is sealed with a sealing resin 53 for protecting the semiconductor chip 31 and the bonding wires 52 on the adherend 51 (sealing step).

  In the sealing step, thermosetting of the adhesive layer 21 proceeds. In the sealing step, the sealing resin 53 is formed by, for example, a transfer molding technique performed using a mold. As a constituent material of the sealing resin 53, for example, an epoxy resin can be used. In the sealing step, the heating temperature for forming the sealing resin 53 is, for example, 165 to 185 ° C., and the heating time is, for example, 60 seconds to several minutes.

  If the sealing resin 53 is not sufficiently cured in the sealing step, a post-curing step for completely curing the sealing resin 53 is performed after the sealing step. Even if the adhesive layer 21 is not completely thermoset in the sealing step, the adhesive layer 21 can be completely thermoset together with the sealing resin 53 in the post-curing step. In the post-curing step, the heating temperature is, for example, 165 to 185 ° C., and the heating time is, for example, 0.5 to 8 hours.

  In the above embodiment, as described above, after the semiconductor chip 31 with the adhesive layer is temporarily fixed to the adherend 51, the wire bonding process is performed without completely thermosetting the adhesive layer 21. Instead of such a configuration, in the method of manufacturing a semiconductor device described above, after the semiconductor chip 31 with the adhesive layer is temporarily fixed to the adherend 51, the adhesive layer 21 is thermally cured and then the wire bonding step is performed. May be.

  In another embodiment of the method for manufacturing a semiconductor device, the wafer thinning step shown in FIG. 8 may be performed instead of the wafer thinning step described with reference to FIG. After the process described above with reference to FIG. 2C, in the wafer thinning step shown in FIG. 8, the semiconductor wafer W is held on the wafer processing tape T2, and the wafer has a predetermined thickness. The semiconductor wafer divided body 30B that is thinned by the grinding process from the second surface Wb and is held by the wafer processing tape T2 including the plurality of semiconductor chips 31 is formed.

  In the wafer thinning step, a method of grinding the wafer until the division groove 30a is exposed on the second surface Wb side (first method) may be adopted, or the division groove 30a may be formed from the second surface Wb side. A method of forming the semiconductor wafer divided body 30B by grinding the wafer to the front and then causing a crack between the dividing groove 30a and the second surface Wb by the action of the pressing force from the rotating grindstone to the wafer (second Method) may be adopted. The depth from the first surface Wa of the dividing groove 30a formed as described above with reference to FIGS. 2A and 2B is appropriately determined according to the method adopted.

  In FIG. 8, the dividing groove 30a that has undergone the first method, or the dividing groove 30a that has undergone the second method and the cracks that are continuous with the dividing groove 30a are schematically indicated by thick lines. In the method of manufacturing a semiconductor device described above, in step A, the semiconductor wafer divided body 30B thus manufactured as a semiconductor wafer divided body is used instead of the semiconductor wafer 30A, and each of the above-described semiconductor wafer divided bodies is described with reference to FIGS. You may perform a process.

  9A and 9B show a process B in the embodiment, that is, a first expanding process (cool expanding process) performed after the semiconductor wafer divided body 30B is attached to the dicing die bond film 1.

  In the step B in the embodiment, the hollow cylindrical push-up member 43 provided in the expanding device is brought into contact with the dicing tape 10 on the lower side of the dicing die bond film 1 in the figure to move up to bond the semiconductor wafer divided body 30B. The dicing tape 10 of the obtained dicing die bond film 1 is expanded so as to be stretched in two-dimensional directions including the radial direction and the circumferential direction of the semiconductor wafer divided body 30B.

  This expanding is performed in the dicing tape 10 under a condition in which a tensile stress within the range of, for example, 5 to 28 MPa, preferably 8 to 25 MPa is generated. The temperature condition in the cool expanding step is, for example, 0 ° C. or lower, preferably −20 to −5 ° C., and more preferably −15 to −5 ° C. The expanding speed in the cool expanding step (the speed at which the push-up member 43 is raised) is preferably 0.1 to 400 mm / sec, more preferably 0.3 to 300 mm / sec. The amount of expansion in the cool expanding step is preferably 1 to 20 mm, more preferably 2 to 16 mm.

  By such a cool expanding process, the adhesive layer 20 of the dicing die bond film 1 is cut into small pieces of the adhesive layer 21 to obtain the semiconductor chip 31 with the adhesive layer. Specifically, in the cool expanding step, in the adhesive layer 20 that is in close contact with the adhesive layer 12 of the dicing tape 10 that is expanded, deformation occurs in each region in which each semiconductor chip 31 of the semiconductor wafer divided body 30B is in close contact. On the other hand, the tensile stress generated in the dicing tape 10 acts on the portions of the dividing grooves 30a between the semiconductor chips 31 which are located in the vertical direction in the figure without such deformation suppressing action. As a result, in the adhesive layer 20, the portions of the dividing grooves 30a between the semiconductor chips 31 which are located in the vertical direction in the figure are cut.

  In still another embodiment of the method for manufacturing a semiconductor device, the semiconductor wafer 30C or the semiconductor wafer divided body 30B used in step A may be replaced with a semiconductor wafer 30C manufactured as follows.

  In this embodiment, as shown in FIGS. 10A and 10B, first, the modified region 30b is formed in the semiconductor wafer W. The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) are already formed on the first surface Wa side of the semiconductor wafer W, and a wiring structure and the like (not shown) necessary for the semiconductor element are already formed on the first surface Wa. Has been done.

  Then, after the wafer processing tape T3 having the adhesive surface T3a is attached to the first surface Wa side of the semiconductor wafer W, the semiconductor wafer W is held on the wafer processing tape T3, and the focusing point is inside the wafer. The semiconductor laser W is irradiated with the combined laser beam from the side opposite to the wafer processing tape T3 along the dividing line to modify the inside of the semiconductor wafer W due to ablation by multiphoton absorption. The region 30b is formed. The modified region 30b is a weakened region for separating the semiconductor wafer W into semiconductor chip units.

  The method of forming the modified region 30b on the planned dividing line on the semiconductor wafer by laser light irradiation is described in detail in, for example, Japanese Patent Application Laid-Open No. 2002-192370, and the laser light irradiation condition in the embodiment is, for example, It is appropriately adjusted within the range of the following conditions.

<Laser light irradiation conditions>
(A) Laser light Laser light source Semiconductor laser excitation Nd: YAG laser Wavelength 1064 nm
Laser light spot cross section 3.14 × 10 ^-8 cm ²
Oscillation form Q switch pulse Repetitive frequency 100kHz or less Pulse width 1μs or less Output 1mJ or less Laser light quality TEM00
Polarization characteristics Linearly polarized light (B) condensing lens Magnification 100 times or less NA 0.55
Transmittance for laser light wavelength 100% or less (C) Moving speed of the table on which the semiconductor substrate is mounted is 280 mm / sec or less

  Next, as shown in FIG. 10C, with the semiconductor wafer W held on the wafer processing tape T3, the semiconductor wafer W is thinned by grinding from the second surface Wb until the semiconductor wafer W reaches a predetermined thickness. By doing so, a semiconductor wafer 30C that can be diced into a plurality of semiconductor chips 31 is formed (wafer thinning step).

  In the method of manufacturing a semiconductor device described above, in step A, the semiconductor wafer 30C thus manufactured is used as a semiconductor wafer that can be diced into pieces, instead of the semiconductor wafer 30A, and described above with reference to FIGS. 3 to 7. You may perform each process.

  11A and 11B show a process B in the embodiment, that is, a first expanding process (cool expanding process) performed after the semiconductor wafer 30C is attached to the dicing die bond film 1.

  In the cool expanding step, the hollow cylindrical push-up member 43 provided in the expanding device is brought into contact with the dicing tape 10 on the lower side of the dicing die bond film 1 in the figure to raise the dicing die bond film to the semiconductor wafer 30C. The first dicing tape 10 is expanded so as to be stretched in two-dimensional directions including the radial direction and the circumferential direction of the semiconductor wafer 30C.

  This expanding is performed in the dicing tape 10 under a condition in which a tensile stress within the range of, for example, 5 to 28 MPa, preferably 8 to 25 MPa is generated. The temperature condition in the cool expanding step is, for example, 0 ° C. or lower, preferably −20 to −5 ° C., and more preferably −15 to −5 ° C. The expanding speed in the cool expanding step (the speed at which the push-up member 43 is raised) is preferably 0.1 to 400 mm / sec, more preferably 0.3 to 300 mm / sec. The amount of expansion in the cool expanding step is preferably 1 to 20 mm, more preferably 2 to 16 mm.

  By such a cool expanding process, the adhesive layer 20 of the dicing die-bonding film 1 is cut into small pieces of the adhesive layer 21 to obtain the semiconductor chip 31 with the adhesive layer. Specifically, in the cool expanding process, cracks are formed in the fragile modified region 30b of the semiconductor wafer 30C, and the semiconductor chips 31 are singulated. At the same time, in the cool expanding process, in the adhesive layer 20 that is in close contact with the adhesive layer 12 of the dicing tape 10 to be expanded, deformation is suppressed in the regions in which the semiconductor chips 31 of the semiconductor wafer 30C are in close contact. On the other hand, a tensile stress generated in the dicing tape 10 acts on a portion of the wafer where the crack is formed in the vertical direction in the drawing without such a deformation suppressing action. As a result, the portions of the adhesive layer 20 that are located in the vertical direction in the drawing of the crack formation portions between the semiconductor chips 31 will be cut.

  In the method for manufacturing a semiconductor device, the dicing die bond film 1 can be used for obtaining a semiconductor chip with an adhesive layer as described above, but a plurality of semiconductor chips are stacked and three-dimensionally mounted. It can also be used for the purpose of obtaining a semiconductor chip with an adhesive layer in some cases. Spacers may be interposed together with the adhesive layer 21 between the semiconductor chips 31 in such three-dimensional mounting, or the spacers may not be interposed.

Hereinafter, the present invention will be described in more detail with reference to examples, but the present invention is not limited to these examples. Table 1 shows the composition of each monomer component constituting the acrylic polymer P ₂ in the pressure-sensitive adhesive layer in Examples and Comparative Examples. However, in Table 1, the unit of the numerical values representing the composition of the composition, figures for the monomer component is a relative "moles", figures for each component other than the monomer components the acrylic polymer P ₂ 100 parts by weight Is the “part by mass”.

Example 1
(Dicing tape)
100 mol of 2-ethylhexyl acrylate (2EHA) acrylate, 20 mol of 2-hydroxyethyl acrylate (HEA), and these monomer components in a reaction vessel equipped with a cooling pipe, a nitrogen introducing pipe, a thermometer, and a stirring device. A mixture containing 0.2 parts by mass of benzoyl peroxide as a polymerization initiator and toluene as a polymerization solvent was stirred at 61 ° C. for 6 hours under a nitrogen atmosphere (polymerization reaction). ). As a result, a polymer solution containing the acrylic polymer P ₁ was obtained.

Next, a mixture containing the polymer solution containing the acrylic polymer P ₁ , 2-methacryloyloxyethyl isocyanate (MOI), and dibutyltin dilaurylate as an addition reaction catalyst was heated at 50 ° C. for 48 hours in an air atmosphere. Stir at (addition reaction). The MOI content in the reaction solution is 16 mol. In the reaction solution, the compounding amount of dibutyltin dilaurylate is 0.01 parts by mass with respect to 100 parts by mass of the acrylic polymer P ₁ . By this addition reaction, a polymer solution containing an acrylic polymer P ₂ having a methacrylate group in its side chain (acrylic polymer containing a structural unit derived from an unsaturated functional group-containing isocyanate compound) was obtained.

Next, 0.75 parts by mass of a polyisocyanate compound (trade name "Coronate L" manufactured by Tosoh Corporation) and 2 parts by mass of photopolymerization start with respect to 100 parts by mass of the acrylic polymer P _{2 in the} polymer solution. Agent (trade name "Irgacure 127", manufactured by BASF) is added and mixed, and toluene is added to the mixture so that the mixture has a viscosity of 500 mPa · s at room temperature. I got a thing.

  Next, the pressure-sensitive adhesive composition was applied to the silicone release-treated surface of the PET separator (thickness: 50 μm) having a silicone release-treated surface using an applicator to form a pressure-sensitive adhesive composition layer. . Next, this composition layer was desolvated by heating at 120 ° C. for 2 minutes to form a pressure-sensitive adhesive layer having a thickness of 10 μm on the PET separator.

  Next, using a laminator, an EVA resin film (having a thickness of 125 μm, manufactured by Nitto Denko Corporation) as a substrate was attached to the exposed surface of the pressure-sensitive adhesive layer at room temperature. This bonded body was then stored at 50 ° C. for 24 hours. The dicing tape of Example 1 was produced as described above.

(Adhesive layer)
100 parts by mass of acrylic polymer A ₁ (trade name “Teisan Resin SG-P3”, manufactured by Nagase Chemtex Co., Ltd.) and solid phenol resin (trade name “MEHC-7851SS”, solid at 23 ° C., manufactured by Meiwa Kasei Co., Ltd. ) 12 parts by mass and 100 parts by mass of silica filler (trade name "SO-C2", average particle size 0.5 μm, manufactured by Admatechs Co., Ltd.) are added to methyl ethyl ketone and mixed to give a solid content concentration of 18 The concentration was adjusted so as to be mass% to obtain an adhesive composition.

  Next, an adhesive composition is applied to the silicone release treated surface of the PET separator (thickness 50 μm) having a silicone release treated surface using an applicator to form a coating film. The membrane was desolvated at 130 ° C. for 2 minutes. As described above, the adhesive layer having a thickness of 15 μm in Example 1 was formed on the PET separator.

(Production of dicing die bond film)
The PET separator was peeled off from the dicing tape of Example 1, and the adhesive layer of Example 1 was attached to the exposed pressure-sensitive adhesive layer. A hand roller was used for bonding. Thus, the dicing die bond film of Example 1 was produced.

Examples 2-33 and Comparative Examples 1-4
In the production of the pressure-sensitive adhesive layer, as shown in Tables 1 to 3, the monomer composition for forming the acrylic polymer P ₁ , the amount of MOI, the type or amount of the photopolymerization initiator, the type or amount of the polyisocyanate compound, A dicing tape and a dicing die bond film were produced in the same manner as in Example 1 except that the above was changed.

  In Tables 1 to 3, "EA" is ethyl acrylate, "BA" is butyl acrylate, "LMA" is lauryl methacrylate, "2MEA" is 2-methoxyethyl acrylate, and "4HBA" is 4-hydroxybutyl acrylate. "HEMA" is 2-hydroxyethyl methacrylate, "AM" is acryloylmorpholine, "Irgacure 2959" is a trade name "Irgacure 2959" (manufactured by BASF), "Irgacure 651" is a trade name "Irgacure 651" (manufactured by BASF), "Irgacure 369" is a trade name "Irgacure 369" (manufactured by BASF), and "Coronate HL" is a trade name "Coronate HL" (manufactured by Tosoh Corporation).

<Evaluation>
The following evaluation was performed about the dicing die bond film obtained by the example and the comparative example. The results are shown in the table.

(Pickup aptitude)
Using a trade name "ML300-Integration" (manufactured by Tokyo Seimitsu Co., Ltd.) as a laser processing device, a converging point is aligned inside a 12-inch semiconductor wafer, and along a grid-like (10 mm x 10 mm) dividing line. Laser light was irradiated to form a modified region inside the semiconductor wafer. Irradiation with laser light was performed under the following conditions.
(A) Laser light
Laser light source Semiconductor laser pumped Nd: YAG laser
Wavelength 1064nm
Laser light spot cross section 3.14 × 10 ^-8 cm ²
Oscillation form Q switch pulse
Repetition frequency 100kHz
Pulse width 30ns
Output 20 μJ / pulse
Laser light quality TEM00 40
Polarization characteristics Linearly polarized light (B) Condensing lens
Magnification 50 times
NA 0.55
60% transmittance for laser light wavelength
(C) Moving speed of the table on which the semiconductor substrate is placed 100 mm / sec

  The method of forming the modified region 30b on the planned dividing line on the semiconductor wafer by laser light irradiation is described in detail in, for example, Japanese Patent Application Laid-Open No. 2002-192370, and the laser light irradiation condition in the embodiment is, for example, It is appropriately adjusted within the range of the following conditions.

<Laser light irradiation conditions>
(A) Laser light Laser light source Semiconductor laser excitation Nd: YAG laser Wavelength 1064 nm
Laser light spot cross section 3.14 × 10 ^-8 cm ²
Oscillation form Q switch pulse Repetitive frequency 100kHz or less Pulse width 1μs or less Output 1mJ or less Laser light quality TEM00
Polarization characteristics Linearly polarized light (B) condensing lens Magnification 100 times or less NA 0.55
Transmittance for laser light wavelength 100% or less (C) Moving speed of the table on which the semiconductor substrate is mounted is 280 mm / sec or less

  After forming the modified region inside the semiconductor wafer, a back grinding protective tape is attached to the surface of the semiconductor wafer, and the thickness of the semiconductor wafer is 30 μm using a back grinder (trade name “DGP8760”, manufactured by Disco Corporation). The back surface was ground so that

  A semiconductor wafer having a modified region and a dicing ring were attached to the dicing die bond films obtained in Examples and Comparative Examples. Then, the semiconductor wafer and the adhesive layer were cleaved using a die separator (trade name “DDS2300”, manufactured by Disco Corporation). Specifically, first, in a cool expander unit, cool expansion was performed under the conditions of a temperature of −15 ° C., a speed (expanding speed) at the time of cool expanding (expanding speed) of 200 mm / sec, and an expanding amount of 14 mm to cut the semiconductor wafer. Then, the area of the part where the adhesive layer floats from the dicing tape (the ratio of the area of the floating semiconductor chip with the adhesive layer when the total area of the adhesive layer is 100%) was observed with a microscope. After the cool expansion, it was confirmed that there was no problem in cutting and floating of the semiconductor chip with the die bond film.

  After the semiconductor wafer and the adhesive layer were cleaved, the above-described cool expander unit was used as it was, and room temperature expansion was performed under the conditions of room temperature, an expanding speed of 1 mm / sec and an expanding amount of 5 mm. Then, using the product name “Die Bonder SPA-300” (manufactured by Shinkawa Co., Ltd.), the pick-up speed was 1 mm / sec, the push-up amount was 500 μm, the number of pins was 5, and 50 semiconductor chips with die bond films were picked up. I tried. Then, the case where all 50 pieces could be picked up was evaluated as ◯, and the case where even one piece out of 50 could not be picked up was evaluated as x. The evaluation results are shown in the table.

(Peeling force in T-type peeling test before UV curing)
With respect to each dicing die bond film obtained in each of Examples and Comparative Examples, the peeling force between the pressure-sensitive adhesive layer and the adhesive layer was examined as follows. First, a test piece was prepared from each dicing die bond film. Specifically, a backing tape (trade name “BT-315”, manufactured by Nitto Denko Corporation) is attached to the adhesive layer side of the dicing die bond film, and a width of 50 mm × length is obtained from the dicing die bond film having the backing tape. A test piece having a size of 120 mm was cut out. Then, the test piece was subjected to a T-type peel test using a tensile tester (trade name “Autograph AGS-J”, manufactured by Shimadzu Corporation), and the peel force (N / 20 mm) was measured. In this measurement, the temperature condition was 23 ° C. and the peeling rate was 300 mm / min. The measurement results are shown in the table.

(Peeling force in T-type peeling test after UV curing (initial))
With respect to the dicing die bond films obtained in Examples and Comparative Examples, the pressure-sensitive adhesive layer was irradiated with ultraviolet rays from the EVA base material side. In ultraviolet irradiation, a high pressure mercury lamp was used, and the integrated irradiation light amount was 350 mJ / cm ² . Then, the peeling force (N / 20 mm) was measured in the same manner as the above-mentioned “Peeling force in T-type peeling test before ultraviolet curing” except that the dicing die bond film irradiated with ultraviolet rays was used. The measurement results are shown in the table.

(Peeling force (over time) in T-type peeling test after UV curing)
The dicing die bond films obtained in Examples and Comparative Examples were stored at 50 ° C. for 1 week. Next, the pressure-sensitive adhesive layer in the dicing die bond film after storage was irradiated with ultraviolet rays from the EVA base material side. In ultraviolet irradiation, a high pressure mercury lamp was used, and the integrated irradiation light amount was 350 mJ / cm ² . Then, the peeling force (N / 20 mm) was measured in the same manner as the above-mentioned “Peeling force in T-type peeling test before ultraviolet curing” except that the dicing die bond film irradiated with ultraviolet rays was used. The measurement results are shown in the table.

(Storability)
The case where the peeling force increase rate calculated by the following formula was 30% or less was evaluated as ◯, and the case where the peeling force increase rate exceeded 30% was evaluated as x. The results are shown in Table 1.
Peel force increase rate (%) = Peel force in T-type peel test after UV curing (age) (N / 20 mm) / Peel force in T-type peel test after UV curing (initial) (N / 20 mm) × 100

  According to the dicing die-bonding films of Examples 1 to 33, even after storage for 1 week at 50 ° C., the increase rate of the peeling force after UV curing was small compared to before storage. Therefore, the dicing die bond films of Examples 1 to 33 can realize good pickup of the semiconductor chip with the adhesive layer after cleaving even after a long time has passed after the manufacture.

1 Dicing Die Bond Film 10 Dicing Tape 11 Base Material 12 Adhesive Layers 20, 21 Adhesive Layers W, 30A, 30C Semiconductor Wafer 30B Semiconductor Wafer Divider 30a Dividing Groove 30b Modified Area 31 Semiconductor Chip

Claims (7)

A dicing tape having a laminated structure including a base material and an adhesive layer,
An adhesive layer that is releasably adhered to the adhesive layer in the dicing tape,
The pressure-sensitive adhesive layer is a polymer having a radical polymerizable functional group and a structural unit derived from a crosslinking agent having a first functional group other than the radical polymerizable functional group while maintaining the radical polymerizable property of the radical polymerizable functional group. And a radical polymerization initiator having a second functional group capable of reacting with the first functional group, a dicing die bond film.   The polymer includes a constitutional unit derived from a monomer component having a third functional group capable of reacting with the first functional group, and the constitutional unit derived from the monomer component and the structural unit derived from the crosslinking agent are The dicing die bond film according to claim 1, comprising a structure in which one functional group and the third functional group are bonded by a chemical reaction. A dicing tape having a laminated structure including a base material and an adhesive layer,
An adhesive layer that is releasably adhered to the adhesive layer in the dicing tape,
The pressure-sensitive adhesive layer has a cross-linking agent-derived structural portion having a radical polymerizable functional group and a first functional group other than the radical polymerizable functional group, and the radical-polymerizable functional group in the cross-linking agent-derived structural portion. Is a dicing die bond film containing a polymer polymerized by a radical polymerization initiator having a second functional group capable of reacting with the first functional group.   The polymer includes a constitutional unit derived from a monomer component having a third functional group capable of reacting with the first functional group, and the constitutional unit derived from the monomer component and the structural unit derived from the crosslinking agent are The dicing die bond film according to claim 3, comprising a structure in which one functional group and the third functional group are bonded by a chemical reaction.   The dicing die bond film according to any one of claims 1 to 4, wherein the second functional group is a hydroxy group.   The dicing die bond film according to claim 1, wherein the first functional group is a functional group capable of reacting with a hydroxy group.   The cross-linking agent-derived structure having a first functional group other than the radical-polymerizable functional group and the radical-polymerizable functional group is a cross-linking-agent-derived structure having a (meth) acryloyl group and an isocyanate group. The dicing die bond film according to any one of 1 to 6.

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