KR20190000304A - Dicing die bond film - Google Patents

Abstract

Provided is a dicing die bond film, which can be cured in a short time with excellent storage stability, and can perform appropriate wire bonding after curing. The dicing die bond film comprises a dicing tape having a laminated structure including a substrate and an adhesive layer and an adhesive layer in close contact with the adhesive layer in the dicing tape in a peelable manner, wherein the adhesive layer contains a thermosetting component, a filler and a curing accelerator, and has the heat generation amount by DSC measurement after heating at the temperature of 130°C for 30 minutes not more than 60% of the heat generation amount before heating and the storage elastic modulus at the temperature of 130°C after heating not less than 20 MPa and not more than 4000 MPa.

Description

DICING DIE BOND FILM [0002]

The present invention relates to a dicing die-bonding film. More particularly, the present invention relates to a dicing die-bonding film usable in the manufacturing process of a semiconductor device.

In the process of manufacturing a semiconductor device, a dicing die-bonding film may be used in the process of obtaining a semiconductor chip having an adhesive film of a size equivalent to a die bonding chip, that is, a semiconductor chip having an adhesive layer for die bonding. The dicing die-bonding film has a size corresponding to the semiconductor wafer to be processed and has a dicing tape composed of, for example, a substrate and a pressure-sensitive adhesive layer, and a die-bonding film (adhesive layer) adhered to the pressure- .

As a method of obtaining a semiconductor chip having an adhesive layer by using a dicing die-bonding film, there is known a method of exposing a dicing tape in a dicing die-bonding film to a step of cutting the die-bonding film. In this method, first, a semiconductor wafer is bonded onto a die-bonding film of a dicing die-bonding film. This semiconductor wafer is, for example, fabricated so that it can be separated into a plurality of semiconductor chips together with a die bond film. Next, in order to cut the die-bonding film on the dicing tape, the dicing tape of the dicing die-bonding film is stretched in the two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer by using an expanding apparatus. In this expanding step, a cutting edge is also generated in the semiconductor wafer on the die-bonding film at a position corresponding to the cut-off point in the die-bonding film, so that the semiconductor wafer on the dicing die- It is reorganized. Then, in order to extend the separation distance from the semiconductor chips with a plurality of die-bonding films on the dicing tape, the expanding process is performed again. Subsequently, for example, after the cleaning process, each semiconductor chip is pushed up from the lower side of the dicing tape by the pin member of the pickup mechanism together with the die bonding film of the size equivalent to the chip closely attached thereto, Pick up. In this way, a die bonding film, that is, a semiconductor chip having an adhesive layer is obtained. The semiconductor chip having the adhesive layer is fixed to an adherend such as a mounting substrate by die bonding with the adhesive layer interposed therebetween. The techniques relating to the dicing die-bonding film used as described above are described, for example, in Patent Documents 1 to 3 below.

Japanese Patent Laid-Open No. 2007-2173 Japanese Patent Application Laid-Open No. 2010-177401 Japanese Patent Application Laid-Open No. 2016-115804

2. Description of the Related Art In recent years, semiconductor devices and their packages have become increasingly sophisticated, thinner, and smaller. As one countermeasure, a three-dimensional mounting technique has been developed in which semiconductor elements (semiconductor chips) are stacked in a plurality of stages in the thickness direction thereof to achieve high-density integration of semiconductor elements.

As the three-dimensional mounting technique, for example, a semiconductor chip is fixed as a semiconductor chip having a die bonding film on an adherend such as a substrate, and semiconductor chips having die bonding films separately obtained on the lowermost semiconductor chip are sequentially Techniques for layering are known. The semiconductor chip with the die-bonding film on the upper side may be fixed while being shifted in the plane enlarging direction with respect to the semiconductor chip on the lower side so as to avoid electrode pads on the wire-bonding surface (upper surface) of the semiconductor chip to be lowered . A semiconductor device (multi-layered laminated semiconductor device) obtained by such a technique, in which semiconductor chips are stacked in layers by using a die-bonding film on an adherend, has a stepped shape, and a semiconductor chip having a die- (So-called overhanging portions) pushed out in the surface expanding direction.

In the semiconductor chip and the adherend, the electrode pad on the upper surface of the semiconductor chip and the terminal portion of the adherend are electrically connected through a bonding wire (wire bonding). Wiring between the electrode pads on the upper surface of the semiconductor chip and the bonding wires for wire bonding is performed by the combination of vibration energy by ultrasonic waves and compression energy by application pressure under heating. Here, when the wire bonding is performed on the electrode pads existing on the overhanging portion of the semiconductor chip, the overhang portion shakes due to the vibration caused by the ultrasonic waves or the load caused by the pressing on the overhang portions, And there is a problem that the sheet is bent.

Such a problem can be alleviated by making the die-bonding film used for bonding the semiconductor chip harder to some extent. However, in order for the die-bonding film to have some degree of tackiness at the time of laminating the semiconductor chip having the die-bonding film and to have a certain degree of hardness at the time of wiring, A method of curing the die-bonding film to such an extent that it is difficult to occur is considered. However, when sufficient curing of the die-bonding film takes time, the productivity is lowered. For this reason, the die-bonding film is required to be curable in a short time.

On the other hand, the die-bonding film which can be cured in a short time tends to be hard to be cured even during storage, so that the storage stability (in particular, the storage stability at room temperature) tends to deteriorate. That is, the curability and the storage stability in a short time are contradictory. Accordingly, there is a demand for a die-bonding film (adhesive layer) which is excellent in storage stability, can be cured in a short time, and can perform appropriate wire bonding (particularly, appropriate wire bonding to the overhang portion) after curing.

An object of the present invention is to provide a dicing die-bonding film having an adhesive layer that is excellent in storage stability and can be cured in a short time and capable of performing appropriate wire bonding after curing have.

Means for Solving the Problems The present inventors have intensively studied in order to achieve the above object, and as a result, have found that the heat generation amount by DSC measurement after heating at 130 캜 for 30 minutes is 60% or less of the heat generation amount before heating, When the adhesive layer having a storage elastic modulus at 130 ° C after the heating is 20 MPa or more and 4000 MPa or less is used as the dicing die-bonding film, the adhesive layer can be cured in a short time, It was possible to do. The present invention has been completed on the basis of these findings.

That is, the present invention provides a dicing tape comprising a dicing tape having a laminated structure including a substrate and a pressure-sensitive adhesive layer, and an adhesive layer which is in close contact with the pressure-sensitive adhesive layer in the dicing tape so as to be removable, Wherein the amount of heat generated by the DSC measurement after heating at 130 占 폚 for 30 minutes is 60% or less of the exothermic amount before heating, and the storage elastic modulus at 130 占 폚 after heating is 20 MPa or more and 4000 MPa or less, Thereby providing a dicing die-bonding film.

The dicing die-bonding film of the present invention comprises a dicing tape and an adhesive layer. The dicing tape has a laminated structure including a substrate and a pressure-sensitive adhesive layer. The adhesive layer is adhered to the pressure-sensitive adhesive layer of the dicing tape in a releasable manner. The dicing die-bonding film having such a configuration can be used for obtaining a semiconductor chip having an adhesive layer in the process of manufacturing a semiconductor device.

In the dicing die-bonding film of the present invention, the adhesive layer contains a thermosetting component, a filler and a curing accelerator, as described above. Then, the heating value by the DSC measurement after heating at 130 占 폚 for 30 minutes is 60% or less of the heating value before heating. This means that 60% or more of the uncured thermosetting component in the adhesive layer before heating is cured by heating at 130 占 폚 for 30 minutes. Since the adhesive layer in the dicing die-bonding film of the present invention has the above-described structure, the adhesive layer can be cured in a short time because the adhesive layer has a large curing rate due to heating under relatively short heating conditions, The storage elastic modulus can be improved in a short time. In addition, since the curing rate of the adhesive layer due to heating under relatively short heating conditions is large, hardening is hardly caused until storage before storage, that is, storage stability is excellent.

Further, in the dicing die-bonding film of the present invention, the above-mentioned adhesive layer has a storage elastic modulus at 130 占 폚 after heating of 20 MPa or more and 4000 MPa or less as described above. Since the storage elastic modulus after heating is 20 MPa or more, the adhesive layer can be cured in a short time, and since it has a certain degree of hardness after curing, appropriate wire bonding can be performed after curing. Particularly, even when the adhesive layer is used for a multi-layered semiconductor device having an overhang portion, vibration due to ultrasonic waves at the time of wire bonding and fluctuation of the overhang portion caused by a load due to pressing against the overhang portion can be suppressed, It is possible to perform appropriate wire bonding. Further, since the storage elastic modulus after heating is 4000 MPa or less, adhesion reliability with an adherend and bonding reliability between semiconductor chips are excellent even after curing.

It is preferable that the thermosetting component in the adhesive layer is a thermosetting resin and / or a thermosetting resin having a thermosetting functional group. The adhesive layer is excellent in storage stability and can be cured within a short period of time and is suitable for proper wire bonding (in particular, suitable for overhangs) after curing, in the constitution using a thermosetting resin or a thermosetting functional group- Wire bonding) can be performed.

The adhesive layer preferably has a viscosity of 300 to 100000 Pa · s at 90 ° C. Since the multi-layered semiconductor device generally has many circuit layers, the semiconductor chip tends to bend largely, and the semiconductor chip tends to be easily peeled off due to this. However, when the viscosity of the adhesive layer at 90 ° C is 300 Pa · s or more, when the die bonding is performed with a relatively easy-to-bend semiconductor chip, the viscosity decreases due to heat from the die bond stage, Peeling is unlikely to occur. When the viscosity is 100000 Pa.s or less, the adhesion reliability with the adherend and the bonding reliability between the semiconductor chips are more excellent even after curing.

The filler in the adhesive layer is preferably silica having an average particle diameter of 70 to 300 nm. The average particle diameter is relatively smaller than the average particle diameter of the filler usually used for the adhesive layer in the dicing die-bonding film. When silica having an average particle size of 300 nm or less, which is relatively smaller than usual, is used as the filler, the surface area of the filler in the adhesive layer is large and the action of the reaction promoter during storage is suppressed by trapping the reaction promoter by the filler And the storage stability is more excellent. When silica having an average particle diameter of 70 nm or more as the filler is used, the curing property of the adhesive layer is improved, and the curing rate of the adhesive layer due to heating under a relatively short period of time tends to become large. In addition, wettability and adhesiveness to an adherend such as a semiconductor wafer are further improved.

The dicing die-bonding film of the present invention has an adhesive layer that is excellent in storage stability and can be cured in a short time and capable of performing appropriate wire bonding after curing. Therefore, when the semiconductor chip with an adhesive layer obtained using the dicing die-bonding film of the present invention is applied to a multi-layered semiconductor device having an overhanging portion, the semiconductor device is excellent in storage stability and can be cured in a short time, It is possible to suppress the vibration caused by the ultrasonic waves and the swinging of the overhang portion caused by the load due to the pressing against the overhang portion, and it is possible to perform appropriate wire bonding to the overhang portion.

In addition, from the viewpoint of storage stability, the dicing die-bonding film is generally stored in a refrigerated state. In this case, it is necessary to return to a normal temperature at the time of use. For this reason, in the case of refrigerated storage, it takes time to return to normal temperature, and productivity is lowered. On the other hand, the dicing die-bonding film of the present invention is excellent in storage stability at room temperature, and does not need to be returned to normal temperature at the time of use, and is excellent in productivity.

BRIEF DESCRIPTION OF DRAWINGS FIG. 1 is a schematic cross-sectional view showing an embodiment of a dicing die-bonding film of the present invention. FIG.
Fig. 2 shows a part of steps in the method of manufacturing a semiconductor device using the dicing die-bonding film shown in Fig.
Fig. 3 shows the process subsequent to the process shown in Fig.
Fig. 4 shows the process subsequent to the process shown in Fig.
Fig. 5 shows the process subsequent to the process shown in Fig.
Fig. 6 shows the process subsequent to the process shown in Fig.
Fig. 7 shows the process subsequent to the process shown in Fig.
Fig. 8 shows a part of steps in a modified example of the semiconductor device manufacturing method using the dicing die-bonding film shown in Fig.
Fig. 9 shows a part of steps in a modification of the method of manufacturing a semiconductor device using the dicing die-bonding film shown in Fig.
Fig. 10 shows a part of steps in a modification of the method of manufacturing a semiconductor device using the dicing die-bonding film shown in Fig.
Fig. 11 shows a part of steps in a modified example of the manufacturing method of a semiconductor device using the dicing die-bonding film shown in Fig.

[Dicing die-bonding film]

The dicing die-bonding film of the present invention comprises a dicing tape having a laminated structure including a substrate and a pressure-sensitive adhesive layer, and an adhesive layer which is in close contact with the pressure-sensitive adhesive layer in the dicing tape in a peelable manner. One embodiment of the dicing die-bonding film of the present invention will be described below. BRIEF DESCRIPTION OF DRAWINGS FIG. 1 is a schematic cross-sectional view showing an embodiment of a dicing die-bonding film of the present invention. FIG.

1, the dicing die-bonding film 1 includes a dicing tape 10 and an adhesive layer 20 laminated on the pressure-sensitive adhesive layer 12 in the dicing tape 10 And can be used in an expanding process in the process of obtaining a semiconductor chip having an adhesive layer in the production of a semiconductor device. The dicing die-bonding film 1 has a disk shape corresponding to the semiconductor wafer to be processed in the manufacturing process of the semiconductor device. The diameter of the dicing die-bonding film 1 is within a range of 345 to 380 mm (for a 12-inch wafer), within a range of 245 to 280 mm (for an 8-inch wafer), within a range of 195 to 230 mm 6 inch wafer compatible type) or in the range of 495 to 530 mm (18 inch wafer compatible type). The dicing tape 10 in the dicing die-bonding film 1 has a laminated structure including the base material 11 and the pressure-sensitive adhesive layer 12. The dicing die-

(Adhesive layer)

The adhesive layer 20 has a function as an adhesive exhibiting thermosetting property for die bonding and also has an adhesive function for holding a frame member such as a ring frame with a work such as a semiconductor wafer if necessary. The adhesive layer 20 can be peeled off by application of a tensile stress, and is used by peeling off by applying a tensile stress.

The adhesive forming the adhesive layer (20) and the adhesive layer (20) contains a thermosetting component, a filler and a curing accelerator. The thermosetting component is preferably at least one of a thermosetting resin and a thermoplastic resin (thermosetting functional group-containing thermoplastic resin) having a curable functional group capable of reacting with the curing agent to cause bonding. That is, the thermosetting component is preferably a thermosetting resin and / or a thermosetting functional group-containing thermoplastic resin. The adhesive layer 20 is excellent in storage stability and can be cured within a short period of time and is suitable for proper wire bonding (particularly, in the case of using a thermosetting resin or a thermosetting functional group- It is possible to perform appropriate wire bonding). When the adhesive layer 20 contains a thermosetting resin as the thermosetting component, it may contain, for example, a thermoplastic resin as a binder component in addition to the thermosetting resin. When the adhesive layer 20 contains a thermosetting functional group-containing thermoplastic resin, the adhesive layer 20 need not contain a thermosetting resin (such as an epoxy resin). The adhesive layer 20 may have a single-layer structure or a multi-layer structure.

Examples of the thermosetting resin include an epoxy resin, a phenol resin, an amino resin, an unsaturated polyester resin, a polyurethane resin, a silicone resin, and a thermosetting polyimide resin. The thermosetting resin may be used alone or in combination of two or more. An epoxy resin is preferable as the above-mentioned thermosetting resin because there is a tendency that the content of ionic impurities or the like which can cause corrosion of semiconductor chips subject to die bonding tends to be small. As the curing agent of the epoxy resin, a phenol resin is preferable.

Examples of the epoxy resin include epoxy resins such as bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type , Orthocresol novolak type, trishydroxyphenylmethane type, tetraphenylol ethane type, hydantoin type, trisglycidyl isocyanurate type, and glycidyl amine type epoxy resins. Of these, novolak type epoxy resins, biphenyl type epoxy resins, trishydroxyphenyl methane type epoxy resins, tetraphenylol ethane type epoxy resins, and the like are preferable because they are rich in reactivity with phenol resins as curing agents and have excellent heat resistance. .

Examples of the phenol resin which can act as a curing agent for the epoxy resin include novolak type phenol resins, resol type phenol resins, and polyoxystyrenes such as polyparaxyxstyrene. Examples of the novolak-type phenol resin include phenol novolac resins, phenol aralkyl resins, cresol novolac resins, tert-butylphenol novolac resins, nonylphenol novolac resins, and the like. The phenol resin may be used alone or in combination of two or more. Among them, a phenol novolak resin and a phenol aralkyl resin are preferable from the viewpoint of improving the connection reliability of the adhesive when used as a curing agent of an epoxy resin as an adhesive for die bonding.

From the viewpoint of sufficiently accelerating the curing reaction between the epoxy resin and the phenolic resin in the adhesive layer 20, the phenolic resin preferably has a hydroxyl group in the phenolic resin per equivalent of the epoxy group in the epoxy resin component, preferably 0.5 to 2.0 equivalents, More preferably 0.7 to 1.5 equivalents.

When the adhesive layer 20 contains a thermosetting resin, the content of the thermosetting resin is preferably from 10 to 70 mass%, more preferably from 20 to 60 mass%, based on the total mass of the adhesive layer 20, to be. When the content ratio is 10% by mass or more, the function as a thermosetting adhesive agent can be appropriately expressed in the adhesive layer 20, the storage elastic modulus can be increased, and appropriate wire bonding (particularly, Bonding) can be realized easily. When the content is 70% by mass or less, the storage elastic modulus is prevented from becoming excessively high, and even if the semiconductor chip is bent in the multi-layered semiconductor device, peeling of the semiconductor chip is less likely to occur.

Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, Thermoplastic polyimide resins, polyamide resins such as 6-nylon and 6,6-nylon, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT, polyamideimide resins and fluororesins. The thermoplastic resin may be used alone or in combination of two or more. The thermoplastic resin is preferably an acrylic resin because it is easy to secure adhesion reliability by the adhesive layer 20 because it has few ionic impurities and high heat resistance.

The acrylic resin is a polymer comprising a constituent unit derived from an acrylic monomer (a monomer component having a (meth) acryloyl group in the molecule) as a constituent unit of the polymer. The acrylic polymer is preferably a polymer containing the structural unit derived from the (meth) acrylic acid ester in the largest amount in the mass ratio. The acrylic polymer may be used alone or in combination of two or more. In the present specification, the term "(meth) acryl" refers to "acrylic" and / or "methacryl" (either or both of "acrylic" and "methacrylic").

Examples of the (meth) acrylic acid esters include (meth) acrylic acid esters containing a hydrocarbon group. Examples of the (meth) acrylic acid ester containing a hydrocarbon group include (meth) acrylic acid alkyl ester, (meth) acrylic acid cycloalkyl ester, and (meth) acrylic acid aryl ester. Examples of the alkyl (meth) acrylate ester include methyl esters, ethyl esters, isopropyl esters, butyl esters, isobutyl esters, s-butyl esters, t-butyl esters, pentyl esters, (Lauryl esters), tridecyl esters, isodecyl esters, isodecyl esters, isodecyl esters, isodecyl esters, isodecyl esters, isobutyl esters, isobutyl esters, isopentyl esters, hexyl esters, heptyl esters, octyl esters, Tetradecyl ester, hexadecyl ester, octadecyl ester, eicosyl ester, and the like. Examples of the (meth) acrylic acid cycloalkyl ester include cyclopentyl ester and cyclohexyl ester of (meth) acrylic acid. Examples of the (meth) acrylic acid aryl esters include phenyl esters of (meth) acrylic acid and benzyl esters. The hydrocarbon group-containing (meth) acrylate ester may be used alone or in combination of two or more. In order to appropriately express the basic properties such as adhesiveness by the (meth) acrylate ester containing a hydrocarbon group in the adhesive layer 20, it is preferable that the content of the (meth) acrylic acid containing hydrocarbons in the entire monomer component for forming an acrylic resin The ratio of the ester is preferably 40 mass% or more, and more preferably 60 mass% or more.

The acrylic resin may contain a structural unit derived from another monomer component copolymerizable with the hydrocarbon group-containing (meth) acrylate ester, for the purpose of modifying the cohesive force, heat resistance and the like. Examples of the other monomer component include monomers containing a functional group such as a carboxyl group-containing monomer, an acid anhydride monomer, a hydroxyl group-containing monomer, a glycidyl group-containing monomer, a sulfonic acid group-containing monomer, a phosphoric acid group-containing monomer, acrylamide and acrylonitrile . Examples of the carboxyl group-containing monomer include acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid and crotonic acid. Examples of the acid anhydride monomers include maleic anhydride, itaconic anhydride, and the like. Examples of the hydroxyl group-containing monomer include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (Meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate and (4-hydroxymethylcyclohexyl) methyl . Examples of the glycidyl group-containing monomer include glycidyl (meth) acrylate and methylglycidyl (meth) acrylate. Examples of the sulfonic acid group-containing monomer include styrenesulfonic acid, allylsulfonic acid, 2- (meth) acrylamido-2-methylpropanesulfonic acid, (meth) acrylamidopropanesulfonic acid, sulfopropyl (meth) ) Acryloyloxynaphthalenesulfonic acid, and the like. Examples of the phosphate group-containing monomer include 2-hydroxyethyl acryloyl phosphate and the like. The other monomer component may be used alone or in combination of two or more. The proportion of the other monomer components in the total monomer components for forming the acrylic resin is preferably in the range of from 0.1 to 5 parts by weight, Is preferably 60 mass% or less, and more preferably 40 mass% or less.

When the adhesive layer 20 contains a thermoplastic resin, the content of the thermoplastic resin is preferably from 3 to 40 mass%, more preferably from 10 to 30 mass%, based on the total mass of the adhesive layer 20, to be. When the content ratio is 3% by mass or more, the storage elastic modulus is prevented from becoming excessively high, and even when the semiconductor chip is bent in the multi-layered semiconductor device, peeling of the semiconductor chip is less likely to occur. When the content ratio is 40 mass% or less, the storage elastic modulus can be relatively increased, and it is easy to realize appropriate wire bonding (particularly, appropriate wire bonding to the overhang).

As the thermosetting functional group-containing thermoplastic resin, for example, an acrylic resin containing a thermosetting functional group can be used. The acrylic resin in the thermosetting functional group-containing acrylic resin preferably contains the structural unit derived from the (meth) acrylic acid ester as the largest structural unit in the mass ratio. Examples of the (meth) acrylic acid ester include (meth) acrylic acid esters exemplified as (meth) acrylic acid esters forming the above acrylic resin as the thermoplastic resin. On the other hand, examples of the thermosetting functional group in the thermosetting functional group-containing acrylic resin include a glycidyl group, a carboxyl group, a hydroxyl group, and an isocyanate group. Among them, a glycidyl group and a carboxyl group are preferable. That is, as the thermosetting functional group-containing acrylic resin, a glycidyl group-containing acrylic resin and a carboxyl group-containing acrylic resin are particularly preferable. In addition, it is preferable to include a curing agent together with an acrylic resin containing a thermosetting functional group. When the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group, it is preferable to use a polyphenolic compound as a curing agent. For example, the above-mentioned various phenolic resins can be used.

In order to realize a certain degree of degree of crosslinking with respect to the adhesive layer 20 before curing for die bonding, for example, it is necessary to react with the functional group at the molecular chain terminal end of the resin, which may be contained in the adhesive layer 20, Is preferably blended in a composition (adhesive composition) for forming an adhesive layer as a crosslinking component. Such a configuration is preferable for the adhesive layer 20 from the viewpoints of improving the adhesion property under high temperature and from the viewpoint of improving the heat resistance. Examples of the cross-linking component include a polyisocyanate compound. Examples of the polyisocyanate compound include tolylene diisocyanate, diphenylmethane diisocyanate, p-phenylenediisocyanate, 1,5-naphthalene diisocyanate, adducts of polyhydric alcohol and diisocyanate, and the like. The content of the crosslinking component in the adhesive composition is preferably not less than 0.05 part by mass with respect to 100 parts by mass of the resin having the functional group capable of reacting with the crosslinking component to improve the cohesion of the adhesive layer 20 to be formed And is preferably not more than 7 parts by mass from the viewpoint of improving the adhesive force of the adhesive layer 20 to be formed. As the crosslinking component, another polyfunctional compound such as an epoxy resin may be used in combination with the polyisocyanate compound.

The glass transition temperature of the acrylic resin and the thermosetting functional group-containing acrylic resin that can be blended in the adhesive layer 20 is preferably -40 to 10 占 폚. As the glass transition temperature of the polymer, a glass transition temperature (theoretical value) obtained based on the following Fox equation can be used. The Fox equation is a relational expression of the glass transition temperature Tg of the polymer and the glass transition temperature Tgi of the homopolymer of the constituent monomers in the polymer. In the following Fox equation, Tg represents the glass transition temperature (占 폚) of the polymer, Wi represents the mass fraction of the monomer i constituting the polymer, and Tgi represents the glass transition temperature (占 폚) of the homopolymer of the monomer i . For the glass transition temperature of the homopolymer, literature values can be used. For example, " Introduction of synthetic resin for paper color 7 paper " (Kitaoka Kogyo Co., Ltd., Polymer Publication Society, 1995) ) &Quot; (Mitsubishi Rayon Co., Ltd.), glass transition temperatures of various homopolymers are illustrated. On the other hand, the homopolymer glass transition temperature of the monomer can be determined by a method specifically disclosed in Japanese Patent Laid-Open No. 2007-51271.

Fox expression 1 / (273 + Tg) =? [Wi / (273 + Tgi)]

The adhesive layer 20 contains a filler as described above. The physical properties such as the conductivity, thermal conductivity and elastic modulus of the adhesive layer 20 can be adjusted by combining the filler with the adhesive layer 20. [ Examples of the filler include an inorganic filler and an organic filler, and an inorganic filler is particularly preferable. Examples of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum whisker, boron nitride, Silica, etc.), metals such as aluminum, gold, silver, copper, and nickel, alloys, amorphous carbon black, and graphite. The filler may have various shapes such as spherical shape, needle shape, and flake shape. The fillers may be used alone or in a combination of two or more. Among the above fillers, silica is preferable from the viewpoint of easiness of adjustment of the average particle diameter as compared with other fillers and hence improvement of the storage stability, further from the viewpoints of low cost and insulating property.

It is preferable that the filler does not have a radiation-curable carbon-carbon double bond (particularly, a radically polymerizable functional group) on its surface. When the filler has a radiation-curable carbon-carbon double bond on its surface, there is a possibility that the reaction with the polymer in the pressure-sensitive adhesive layer (12) proceeds from irradiation with radiation. Therefore, by using a filler having no radiation-curable carbon-carbon double bond on the surface, the storage stability is further improved. Further, when the pickup process described later is performed after the radiation-curing of the pressure-sensitive adhesive layer 12, the pick-up of the semiconductor chip 31 having the adhesive layer from the pressure-sensitive adhesive layer 12 in the pickup process can be performed more easily. As the filler having no radiation-curable carbon-carbon double bond on the surface, a filler not subjected to the surface treatment can be used.

The average particle diameter of the filler is preferably 70 to 300 nm, more preferably 75 to 250 nm. The average particle diameter is relatively smaller than the average particle diameter of the filler usually used for the adhesive layer in the dicing die-bonding film. When the filler having an average particle diameter of 300 nm or less, which is relatively smaller than usual, is used as the filler, the surface area of the filler in the adhesive layer is large and the action promoter is trapped by the filler, And the storage stability is more excellent. When a filler having an average particle diameter of 70 nm or more is used as the filler, trapping of the curing accelerator by the filler is presumed to be suitable, and the curing property of the adhesive layer 20 is improved by maintaining the action of the curing accelerator And the curing rate of the adhesive layer 20 due to heating under a relatively short time heating condition tends to become larger. In addition, wettability and adhesiveness to an adherend such as a semiconductor wafer are further improved. The average particle diameter of the filler is determined as follows. After the cured adhesive layer 20 is embedded in the resin, the cross section of the adhesive layer is exposed from the embedded resin, and the cross-section is subjected to ion milling with a CP processing apparatus, followed by conducting an FE-SEM observation, An electron image is obtained, the area of the filler in the introduced image is divided by the number of fillers in the image, and the average area of the filler is obtained, and this is regarded as the average particle diameter of the filler. Particularly, the filler is preferably silica having an average particle diameter within the above range.

The content of the filler in the adhesive layer 20 is preferably 3 to 60% by mass, and more preferably 20 to 50% by mass with respect to the total mass of the adhesive layer 20. When the content ratio is 3 mass% or more, it is easy to make the adhesive layer 20 better in the cool expansion process to be described later, and in the pickup process described later, the semiconductor chip having the adhesive layer can be picked up more satisfactorily have. When the content ratio is 60 mass% or less, the adhesiveness with the pressure-sensitive adhesive layer 12 and the adhesion between the semiconductor chips or between the adherend and the semiconductor chip become better.

The adhesive layer 20 contains a curing accelerator as described above. By the incorporation of the curing accelerator into the adhesive layer 20, the curing reaction of the thermosetting component can be sufficiently promoted or the curing reaction rate can be increased in the curing of the adhesive layer 20. Examples of the curing accelerator include imidazole-based compounds, triphenylphosphine-based compounds, amine-based compounds, and trihalogenborane-based compounds. Examples of the imidazole compound include 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, 2-ethyl- 2-phenylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2- Methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6- [ 2 '- undecylimidazolyl- (1')] - ethyl-s-triazine, 2, Methylaminoimidazolyl- (1 ')] - ethyl-s-triazine, 2,4-diamino-6- [2'-methylimidazole 2-phenyl-4-methyl-5-hydroxymethyl, 2-phenyl-4-methyl-5-hydroxymethylimidazole, And the like. Examples of the triphenylphosphine compound include triphenylphosphine, tri (p-methylphenyl) phosphine, tri (nonylphenyl) phosphine, diphenyltolylphosphine, tetraphenylphosphonium bromide, methyltriphenylphosphonium, Methyltriphenylphosphonium chloride, methoxymethyltriphenylphosphonium, benzyltriphenylphosphonium chloride, and the like. The triphenylphosphine-based compound also includes a compound having a triphenylphosphine structure and a triphenylborane structure. Examples of such compounds include tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium tetra-p-triborate, benzyltriphenylphosphonium tetraphenylborate, and triphenylphosphine triphenylborane. Examples of the amine-based compound include monoethanolamine trifluoroborate and dicyandiamide. As the trihalogenborane compound, for example, trichloroboran can be given. The curing accelerator may be used alone or in combination of two or more.

The content of the curing accelerator in the adhesive layer 20 is preferably 0.15 to 10 parts by mass, more preferably 0.2 to 3 parts by mass, based on 100 parts by mass of the thermosetting component. When the content is 0.15 parts by mass or more, the action of the curing accelerator is sufficiently exhibited, and the curing of the adhesive layer 20 by heating under a relatively short time of heating is liable to proceed more greatly. When the content is 10 parts by mass or less, storage stability is more excellent.

The adhesive layer 20 may contain other components as required. Examples of the other components include flame retardants, silane coupling agents, ion trap agents, dyes, and the like. Examples of the flame retardant include antimony trioxide, antimony pentoxide, brominated epoxy resin, and the like. Examples of the silane coupling agent include, for example,? - (3,4-epoxycyclohexyl) ethyltrimethoxysilane,? -Glycidoxypropyltrimethoxysilane,? -Glycidoxypropylmethyldiethoxysilane, . Examples of the ion trap agent include hydrotalcites, bismuth hydroxide, antimony oxide (e.g., " IXE-300 ", manufactured by Toagosei Co., Ltd.), zirconium phosphate having a specific structure (E.g., " IXE-100 ", manufactured by Shikisai K.K.), magnesium silicate (e.g., " KYOWAD 600 ", manufactured by KYOWA KAGAKU KOGYO KABUSHIKI KAISHA) &Quot; Kyowade 700 "). A compound capable of forming a complex with a metal ion can also be used as an ion trap agent. Such compounds include, for example, triazole-based compounds, tetrazole-based compounds, and bipyridyl-based compounds. Of these, triazole-based compounds are preferable from the viewpoint of the stability of the complex formed with metal ions. Examples of such triazole compounds include 1,2,3-benzotriazole, 1- {N, N-bis (2-ethylhexyl) aminomethyl} benzotriazole, carboxybenzotriazole, 2- (2-hydroxy-3-t-butylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy- Butylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3,5-di-t-amylphenyl) benzotriazole, 2- Phenyl) benzotriazole, 6- (2-benzotriazolyl) -4-t-octyl-6'- Dihydroxypropyl) benzotriazole, 1- (1,2-dicarboxydiethyl) benzotriazole, 1- (2-ethylhexylaminomethyl) benzotriazole, 2,4- (3-t-butylphenyl) -2H-benzotriazole, 2-ethylhexyl-3- [3-t (5-chloro-2H-benzotriazol-2-yl) phenyl] propionate, 2- (2H- (1-methyl-1-phenylethyl) -4- (1,1,3,3-tetramethylbutyl) phenol, 2- (2H-benzotriazol- ) -4-t-butylphenol, 2- (2-hydroxy-5-methylphenyl) benzotriazole, 2- (2-hydroxy-3,5-di-t-amylphenyl) benzotriazole, 2- (2-hydroxyphenyl) 3,5-di (t-butylphenyl) -5-chloro-benzotriazole, 2- [2-hydroxy- 4- (1,1,3,3-tetramethylbutyl) phenol], 2- [2-hydroxy-benzenesulfonyl] Benzotriazole, methyl-3- [3- (2H-benzotriazol-2-yl) -5-t-butyl- Hydroxyphenyl] propionate, and the like. Specific hydroxy group-containing compounds such as a quinoline compound, a hydroxyanthraquinone compound, and a polyphenol compound can also be used as an ion trapping agent. Specific examples of such hydroxy group-containing compounds include 1,2-benzene diol, alizarin, anthrulphine, tannin, gallic acid, methyl gallate, pyrogallol and the like. The above-mentioned other additives may be used alone or in combination of two or more.

The thickness of the adhesive layer 20 (total thickness in the case of a laminate) is not particularly limited, but is, for example, 1 to 200 占 퐉. The upper limit is preferably 100 mu m, more preferably 80 mu m. The lower limit is preferably 3 탆, more preferably 5 탆.

As described above, the adhesive layer 20 has a heat generation amount by DSC measurement after heating at 130 占 폚 for 30 minutes is 60% or less of the heat generation amount before heating. That is, the heat generation amount (J / g) / the heat generation amount (J / g) before heating 100 (%) by DSC measurement after heating at 130 占 폚 for 30 minutes is 60% or less. This means that 60% or more of the uncured thermosetting component in the adhesive layer before heating is cured by heating at 130 占 폚 for 30 minutes. Since the adhesive layer in the dicing die-bonding film of the present invention has the above-described structure, the adhesive layer can be cured in a short time because the adhesive layer has a large curing rate due to heating under relatively short heating conditions, The storage elastic modulus can be improved in a short time. Further, since the curing rate of the adhesive layer due to heating in a relatively short time heating condition is large, hardening does not occur until the heating even during storage, that is, the storage stability is excellent. The amount of heat generated by the DSC measurement after heating at 130 캜 for 30 minutes is preferably 50% or less, more preferably 40% or less, of the amount of heat generated before heating. The lower limit may be 0% or 10%.

The amount of heat generated by the DSC measurement before heating of the adhesive layer 20 is preferably 20 to 500 J / g, and more preferably 50 to 300 J / g. If the calorific value is 20 J / g or more, the adhesive layer 20 can be cured more greatly by heating under relatively short time heating conditions. When the calorific value is 500 J / g or less, the adhesive strength of the surface of the adhesive layer 20 can be secured to some extent, and the adhesion to the semiconductor wafer and the semiconductor chip is excellent during the use of the dicing die-bonding film.

The heat generated by the DSC measurement of the adhesive layer 20 after heating at 130 캜 for 30 minutes is preferably 5 to 60 J / g, more preferably 10 to 50 J / g. If the calorific value is 5 J / g or more, it can be cured together with the sealing resin in a subsequent sealing process than the wire bonding process. If the calorific value is 60 J / g or less, the adhesive layer 20 can be cured more greatly by heating under a relatively short time heating condition.

The calorific value by the DSC measurement is the total calorific value [J / g] when the adhesive layer 20 is heated from 0 ° C to 350 ° C at a rate of 10 ° C / min using a differential scanning calorimeter. The mass of the adhesive layer 20 used for the DSC measurement is, for example, 10 to 15 mg.

The calorific value before heating by the DSC measurement and the calorific value after heating at 130 占 폚 for 30 minutes can be controlled by the ratio of the thermosetting component in the adhesive layer 20, the amount of the curing accelerator, the ratio of the filler, Specifically, the greater the proportion of the thermosetting component, the greater the amount of heat generated before heating. The greater the amount of the curing accelerator, the greater the progress of curing in a relatively short time, so that the calorific value after heating at 130 DEG C for 30 minutes tends to decrease. The smaller the ratio of the filler and the larger the particle diameter of the filler, the lower the amount of the curing accelerator to be trapped, the larger the progress of curing in a relatively short time, and the smaller the calorific value after heating at 130 캜 for 30 minutes have.

As described above, the adhesive layer 20 has a storage elastic modulus at 130 占 폚 after the heating of 20 MPa or more and 4000 MPa or less. Since the storage elastic modulus after heating is 20 MPa or more, the adhesive layer can be cured in a short time, and since it has a certain degree of hardness after curing, appropriate wire bonding can be performed after curing. Particularly, even when the adhesive layer is used for a multi-layered semiconductor device having an overhang portion, vibration due to ultrasonic waves at the time of wire bonding and fluctuation of the overhang portion caused by a load due to pressing against the overhang portion can be suppressed, It is possible to perform appropriate wire bonding. Further, since the storage elastic modulus after heating is 4000 MPa or less, adhesion reliability with an adherend and bonding reliability between semiconductor chips are excellent even after curing. The upper limit of the storage elastic modulus may be 2000 MPa, or may be 1000 MPa or 500 MPa.

The storage elastic modulus is a dynamic storage elastic modulus at 130 캜 measured in a tensile mode under the conditions of a frequency of 1 Hz, an initial chuck distance of 10 mm, and a strain of 0.1% using a tester.

The storage elastic modulus can be controlled by the ratio of the thermosetting component in the adhesive layer 20, the ratio of the thermoplastic resin, the amount of the curing accelerator, the filler ratio, and the like. Specifically, the more the ratio of the thermosetting component, the amount of the curing accelerator, and the filler, the harder the adhesive layer 20 after heating, and the storage elastic modulus tends to increase. On the other hand, as the proportion of the thermoplastic resin increases, the adhesive layer 20 after heating tends to soften, so that the storage elastic modulus tends to decrease.

The viscosity of the adhesive layer 20 at 90 캜 is preferably 300 to 100000 Pa · s. Since the above-described multi-layered semiconductor device generally has a large number of circuit layers, the semiconductor chip tends to bend largely, and the semiconductor chip tends to peel off due to this. However, when the viscosity of the adhesive layer 20 at 90 ° C is 300 Pa · s or more, when the semiconductor chip is die-bonded to a relatively flexible semiconductor chip, the viscosity of the adhesive layer 20 decreases due to heat from the die bond stage, It is difficult for the chip to peel off. When the viscosity is 100000 Pa.s or less, the adhesion reliability with the adherend and the bonding reliability between the semiconductor chips are more excellent even after curing. The viscosity is preferably 500 to 50000 Pa · s, and more preferably 1000 to 40000 Pa · s. It is also preferable that the viscosity of the adhesive layer 20 after storage at 23 占 폚 for 28 days at 90 占 폚 is within the above range. The viscosity is a value measured by a rotary viscometer under the conditions of a gap of 100 탆, a rotating plate diameter of 8 mm, a heating rate of 10 캜 / min, a deformation of 10% and a frequency of 5 rad / sec.

(Viscosity increase rate) at 90 占 폚 after storage for 28 days at 23 占 폚 (viscosity (Pa 占 퐏) at 90 占 폚 after storage for 28 days at 23 占 폚 -90 占 폚 (Pa 占 퐏)} / 90 占 폚 (Pa 占 퐏) 占 100] (%) is preferably less than 150%, more preferably less than 100%. If the increase rate of the viscosity is less than 150%, the storage stability is more excellent. The lower limit of the rate of increase of the viscosity may be 0%.

(materials)

The base material 11 of the dicing tape 10 is an element serving as a support in the dicing tape 10 and the dicing die-bonding film 1. [ As the substrate 11, for example, a plastic substrate (particularly a plastic film) can be mentioned. The substrate 11 may be a single layer or a laminate of the same or different kinds of substrates.

Examples of the resin constituting the plastic substrate include low density polyethylene, linear low density polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymerized polypropylene, block copolymerized polypropylene, homopolypropylene, (Meth) acrylic acid ester (random, alternating) copolymer, an ethylene-butene copolymer, an ethylene-hexene copolymer, an ethylene-vinyl acetate copolymer A polyolefin resin such as a co-polymer; Polyurethane; Polyesters such as polyethylene terephthalate (PET), polyethylene naphthalate and polybutylene terephthalate (PBT); Polycarbonate; Polyimide; Polyether ether ketone; Polyetherimide; Polyamides such as aramid and wholly aromatic polyamide; Polyphenylsulfide; Fluorine resin; Polyvinyl chloride; Polyvinylidene chloride; Cellulose resin; Silicone resin, and the like. From the viewpoint of securing good heat shrinkability in the base material 11 and easily holding the chip separation distance in a room temperature expanding step to be described later by using the partial heat shrinkage of the dicing tape 10 or the base material 11, (11) preferably contains an ethylene-vinyl acetate copolymer as a main component. The main component of the base material 11 is a component that occupies the largest mass ratio among the constituent components. These resins may be used alone or in combination of two or more. When the pressure-sensitive adhesive layer 12 is a radiation-curable pressure-sensitive adhesive layer as described later, it is preferable that the base material 11 has radiation transmittance.

When the substrate 11 is a plastic film, the plastic film may be unoriented or oriented at least in one direction (uniaxial, biaxial, etc.). When oriented in at least one direction, the plastic film becomes heat shrinkable in at least one direction. It is possible to heat shrink the outer circumferential portion of the semiconductor wafer of the dicing tape 10 so that the gap between the semiconductor chips having adhesive layers which are separated from each other is widened The substrate 11 can be easily picked up. In order that the substrate 11 and the dicing tape 10 have isotropic heat shrinkability, the substrate 11 is preferably a biaxially oriented film. The plastic film oriented in at least one direction can be obtained by stretching the plastic film without stretching at least in one direction (uniaxial stretching, biaxial stretching, etc.). The base material (11) and the dicing tape (10) The heat shrinkage ratio in the heat treatment test conducted under the conditions of the heating temperature of 100 캜 and the heating time treatment of 60 seconds is preferably 1 to 30%, more preferably 2 to 25% It is in the range of 3 to 20%, particularly preferably 5 to 20%. The heat shrinkage ratio, it is preferable that the heat shrinkage at least in one direction of the MD direction and the TD direction.

The surface of the substrate 11 on the side of the pressure-sensitive adhesive layer 12 is subjected to corona discharge treatment, plasma treatment, sand matte treatment, ozone exposure treatment, or the like for the purpose of enhancing adhesion with the pressure- , Physical treatment such as flame exposure treatment, high-voltage electric exposure treatment, and ionizing radiation treatment; Chemical treatment such as chromic acid treatment; Or surface treatment such as adhesion facilitating treatment with a coating agent (primer) may be performed. In addition, a conductive vapor deposition layer containing a metal, an alloy, an oxide thereof, or the like may be formed on the surface of the substrate 11 in order to impart the antistatic function. It is preferable that the surface treatment for enhancing the adhesion is performed on the entire surface of the base material 11 on the side of the pressure-sensitive adhesive layer 12. [

The thickness of the base material 11 is preferably 40 占 퐉 or more from the viewpoint of securing the strength for the function of the base material 11 as a support in the dicing tape 10 and the dicing die-bonding film 1, More preferably not less than 50 mu m, further preferably not less than 55 mu m, particularly preferably not less than 60 mu m. From the viewpoint of realizing appropriate flexibility in the dicing tape 10 and the dicing die-bonding film 1, the thickness of the base material 11 is preferably 200 占 퐉 or less, more preferably 180 占 퐉 or less , More preferably not more than 150 mu m.

(Pressure-sensitive adhesive layer)

The pressure-sensitive adhesive layer 12 of the dicing die-bonding film 1 is a pressure-sensitive adhesive layer capable of intentionally reducing the adhesive force due to external action in the process of using the dicing die-bonding film 1 (Pressure-sensitive adhesive layer capable of releasable pressure-sensitive adhesive), and may be a pressure-sensitive adhesive layer (pressure-sensitive adhesive force-reducing type pressure-sensitive adhesive layer) having little or no reduction in adhesive force due to external action during use of the dicing die- The semiconductor wafer can be appropriately selected according to the method and condition of individualization of the semiconductor wafer to be separated by using the single die bond film 1. [

When the pressure-sensitive adhesive layer 12 is a pressure-sensitive adhesive force-reducible pressure-sensitive adhesive layer, the pressure-sensitive adhesive layer 12 exhibits a relatively high adhesive force in a manufacturing process or a use process of the dicing die- Can be distinguished from each other. For example, when the adhesive layer 20 is bonded to the pressure-sensitive adhesive layer 12 of the dicing tape 10 in the process of manufacturing the dicing die-bonding film 1 or when the dicing die- It is possible to suppress or prevent lifting of an adherend such as the adhesive layer 20 from the pressure-sensitive adhesive layer 12 by using a state in which the pressure-sensitive adhesive layer 12 exhibits a relatively high adhesive force, In the pick-up step for picking up the semiconductor chip having the adhesive layer from the dicing tape 10 of the dicing die-bonding film 1, the adhesive force of the pressure-sensitive adhesive layer 12 is reduced so that pickup can be easily performed.

Examples of the pressure-sensitive adhesive for forming such a pressure-sensitive adhesive pressure-sensitive adhesive layer include a radiation-curable pressure-sensitive adhesive, a heat-foamable pressure-sensitive adhesive, and the like. As the pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer, one type of pressure-sensitive adhesive may be used, or two or more pressure-sensitive adhesives may be used.

As the radiation-curing pressure-sensitive adhesive, for example, a pressure-sensitive adhesive of the type which is cured by irradiation with an electron beam, an ultraviolet ray, an? Ray, a? Ray, a? Ray or an X ray can be used. A pressure-sensitive adhesive) can be particularly preferably used.

Examples of the radiation-curable pressure-sensitive adhesive include a base polymer such as an acrylic polymer and an addition type radiation-curable pressure-sensitive adhesive containing a radiation-polymerizable monomer component or oligomer component having a functional group such as a radiation-polymerizable carbon-carbon double bond.

The acrylic polymer is a polymer comprising a constituent unit derived from an acrylic monomer (a monomer component having a (meth) acryloyl group in the molecule) as a constituent unit of the polymer. The acrylic polymer is preferably a polymer containing the structural unit derived from the (meth) acrylic acid ester in the largest amount in the mass ratio. The acrylic polymer may be used alone or in combination of two or more.

Examples of the (meth) acrylic acid esters include (meth) acrylic acid esters containing a hydrocarbon group. Examples of the hydrocarbon group-containing (meth) acrylic acid ester include those exemplified as constituent units of an acrylic resin as a thermoplastic resin that can be contained in the above-mentioned adhesive layer 20. The hydrocarbon group-containing (meth) acrylate ester may be used alone or in combination of two or more. In order to appropriately express the basic properties of the pressure-sensitive adhesive layer 12 such as adhesion with a hydrocarbon group-containing (meth) acrylate ester, it is preferable to use a monomer containing a (meth) acrylate ester having a hydrocarbon group Is preferably 40 mass% or more, and more preferably 60 mass% or more.

The acrylic polymer may contain a structural unit derived from another monomer component copolymerizable with the hydrocarbon group-containing (meth) acrylate ester, for the purpose of modifying the cohesive force, heat resistance, and the like. Examples of the other monomer component include those exemplified as constituent units of an acrylic resin as a thermoplastic resin that can be contained in the above-mentioned adhesive layer 20. The other monomer component may be used alone or in combination of two or more. The total content of the other monomer components in the total monomer components for forming the acrylic polymer is preferably in the range of from 0.01 to 10 parts by mass, , Preferably 60 mass% or less, and more preferably 40 mass% or less.

The acrylic polymer may contain a structural unit derived from a polyfunctional monomer capable of copolymerizing with a monomer component forming an acrylic polymer to form a crosslinked structure in the polymer backbone. Examples of the polyfunctional monomer include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (Meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate Monomers having a (meth) acryloyl group and other reactive functional groups in the molecule such as polyglycidyl (meth) acrylate), polyester (meth) acrylate and urethane (meth) have. The multifunctional monomers may be used alone or in combination of two or more. In order to appropriately express the basic properties such as adhesiveness by the (meth) acrylate ester containing a hydrocarbon group in the pressure-sensitive adhesive layer 12, the ratio of the polyfunctional monomer in the total monomer component for forming the acrylic polymer is preferably 40 By mass or less, more preferably 30% by mass or less.

The acrylic polymer is obtained by using at least one monomer component containing an acrylic monomer for polymerization. Examples of the polymerization method include solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization.

The mass average molecular weight of the acrylic polymer is preferably 100,000 or more, and more preferably 200,000 to 3,000,000. When the mass average molecular weight is 100,000 or more, the low molecular weight substance in the pressure-sensitive adhesive layer tends to be small, so that contamination of the adhesive layer or the semiconductor wafer can be further suppressed.

The pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer (12) or the pressure-sensitive adhesive layer (12) may contain a crosslinking agent. For example, when an acrylic polymer is used as the base polymer, the acrylic polymer may be crosslinked to further reduce the low molecular weight substance in the pressure-sensitive adhesive layer 12. [ Further, the mass average molecular weight of the acrylic polymer can be increased. Examples of the crosslinking agent include a polyisocyanate compound, an epoxy compound, a polyol compound (such as a polyphenol compound), an aziridine compound, and a melamine compound. When a crosslinking agent is used, the amount of the crosslinking agent to be used is preferably about 5 parts by mass or less, more preferably 0.1 to 5 parts by mass, based on 100 parts by mass of the base polymer.

Examples of the radiation polymerizable monomer component include urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (Meth) acrylate, trimethylolpropane trimethacrylate, trimethylolpropane trimethacrylate, erythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, and 1,4-butanediol di (meth) acrylate. Examples of the radiation-polymerizable oligomer component include various oligomers such as urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based oligomers and preferably have a molecular weight of about 100 to 30,000. The content of the radiation-curable monomer component and the oligomer component in the radiation-curing pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 is, for example, 5 to 500 parts by mass, preferably 40 to 150 parts by mass per 100 parts by mass of the base polymer It is about degree. As the addition type radiation-curable pressure-sensitive adhesive, for example, those disclosed in Japanese Patent Application Laid-open No. 60-196956 may be used.

Examples of the radiation-curing pressure-sensitive adhesive include an internal radiation-curable pressure-sensitive adhesive containing a base polymer having a functional group such as a radiation-polymerizable carbon-carbon double bond at the side chain of the polymer, at the main chain of the polymer, or at the end of the main chain of the polymer. Use of such an intrinsic type radiation-curing pressure-sensitive adhesive tends to suppress unintended changes in the adhesive property due to the movement of a low molecular weight component in the formed pressure-sensitive adhesive layer 12 over time.

As the base polymer contained in the built-in radiation-curable pressure-sensitive adhesive, an acrylic polymer is preferable. As a method of introducing a radiation-polymerizable carbon-carbon double bond into an acrylic polymer, for example, there is a method of polymerizing (copolymerizing) a raw monomer containing a monomer component having a first functional group to obtain an acrylic polymer, And a compound having a second functional group and a radiation-polymerizable carbon-carbon double bond which can be reacted with the acryl-based polymer while maintaining the radiation-polymerizing property of the carbon-carbon double bond.

Examples of the combination of the first functional group and the second functional group include a carboxyl group and an epoxy group, an epoxy group and a carboxyl group, a carboxyl group and an aziridyl group, an aziridyl group and a carboxy group, a hydroxy group and an isocyanate group, an isocyanate group and a hydroxy group. Among these, a combination of a hydroxy group and an isocyanate group, and a combination of an isocyanate group and a hydroxy group are preferable from the viewpoint of easiness of reaction tracking. In particular, from the viewpoints of production and availability of an acrylic polymer having a hydroxyl group, the polymer having an isocyanate group having a high reactivity is highly technically difficult, and the first functional group is a hydroxy group, and the second functional group is an isocyanate Is preferred. Examples of the isocyanate compound having an isocyanate group and a radiolucent carbon-carbon double bond, that is, a radiation-polymerizable unsaturated functional group-containing isocyanate compound include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, m- -α, α-dimethylbenzyl isocyanate, and the like. Examples of the acrylic polymer having a hydroxy group include a structural unit derived from the above-mentioned hydroxyl group-containing monomer and an ether compound such as 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, and diethylene glycol monovinyl ether .

The radiation curable pressure sensitive adhesive preferably contains a photopolymerization initiator. As the photopolymerization initiator, for example, an? -Ketol compound, an acetophenone compound, a benzoin ether compound, a ketal compound, an aromatic sulfonyl chloride compound, a photoactive oxime compound, a benzophenone compound, Tonometrical compounds, camphorquinones, halogenated ketones, acylphosphine oxides, acylphosphonates and the like. Examples of the? -Ketol compound include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone,? -Hydroxy- ?,? '- dimethylacetophenone, 2- Methyl-2-hydroxypropiophenone, 1-hydroxycyclohexyl phenyl ketone, and the like. Examples of the acetophenone compound include methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1- [4- (methylthio) -Phenyl] -2-morpholinopropane-1. Examples of the benzoin ether compound include benzoin ethyl ether, benzoin isopropyl ether, and anisoin methyl ether. Examples of the ketal compound include benzyl dimethyl ketal and the like. Examples of the aromatic sulfonyl chloride-based compound include 2-naphthalenesulfonyl chloride and the like. As the photoactive oxime compound, for example, 1-phenyl-1,2-propanedione-2- (O-ethoxycarbonyl) oxime and the like can be given. Examples of the benzophenone-based compound include benzophenone, benzoylbenzoic acid and 3,3'-dimethyl-4-methoxybenzophenone. Examples of the thioxanthone compound include thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichloroti 2,4-diethyl thioxanthone, 2,4-diisopropyl thioxanthone, and the like. The content of the photopolymerization initiator in the radiation-curing pressure-sensitive adhesive is, for example, 0.05 to 20 parts by mass relative to 100 parts by mass of the base polymer.

The heat-expandable pressure-sensitive adhesive is a pressure-sensitive adhesive containing components (foaming agent, heat-expandable microspheres, etc.) which foam or expand by heating. Examples of the foaming agent include various inorganic foaming agents and organic foaming agents. Examples of the inorganic foaming agent include ammonium carbonate, ammonium hydrogencarbonate, sodium hydrogencarbonate, ammonium nitrite, sodium borohydride, and azide. As the organic foaming agent, for example, there may be mentioned a halogenated alkane such as trichloromonofluoromethane and dichloromonofluoromethane; Azo compounds such as azobisisobutyronitrile, azodicarbonamide and barium azodicarboxylate; Hydrazine compounds such as para-toluenesulfonyl hydrazide, diphenylsulfone-3,3'-disulfonylhydrazide, 4,4'-oxybis (benzenesulfonylhydrazide) and allyl bis (sulfonylhydrazide); a semicarbazide-based compound such as p-toluenesulfonyl semicarbazide, 4,4'-oxybis (benzenesulfonyl semicarbazide); Triazole-based compounds such as 5-morpholyl-1,2,3,4-thiatriazole; N-nitroso compounds such as N, N'-dinitrosopentamethylenetetramine and N, N'-dimethyl-N, N'-dinitrosoterephthalamide. Examples of the thermally expandable microspheres include microspheres having a structure in which a material which is easily gasified by heating to expand and which is enclosed in a shell. Examples of the material which is easily gasified and expanded by the above heating include isobutane, propane, pentane and the like. A thermally expandable microsphere can be manufactured by enclosing a material which is easily gasified by heating and expands in a shell-forming material by a coacervation method or an interfacial polymerization method. As the shell-forming material, a material exhibiting thermal melting property or a material capable of being ruptured by the action of thermal expansion of the enclosed material can be used. Examples of such a substance include vinylidene chloride / acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, polysulfone and the like.

Examples of the adhesive force-reducing pressure-sensitive adhesive layer include a pressure-sensitive adhesive layer. The pressure-sensitive adhesive layer includes a pressure-sensitive adhesive layer having a constant adhesive force while curing the pressure-sensitive adhesive layer formed of the radiation-curable pressure-sensitive adhesive described above with respect to the pressure-sensitive adhesive force- As the pressure-sensitive adhesive for forming the pressure-sensitive adhesive force-reducing pressure-sensitive adhesive layer, one type of pressure-sensitive adhesive may be used, or two or more pressure-sensitive adhesives may be used. Further, the whole of the pressure-sensitive adhesive layer 12 may be a pressure-sensitive adhesive force-reducing type pressure-sensitive adhesive layer or a part thereof may be a pressure-sensitive adhesive force-reducing pressure-sensitive adhesive layer. For example, when the pressure-sensitive adhesive layer 12 has a single-layer structure, the whole pressure-sensitive adhesive layer 12 may be a pressure-sensitive adhesive force-reducing pressure-sensitive adhesive layer, Sensitive adhesive layer may be an adhesive force reducing type pressure-sensitive adhesive layer, and another portion (for example, a central region to be adhered to the semiconductor wafer) may be an adhesive force reducing type pressure-sensitive adhesive layer. When the pressure-sensitive adhesive layer 12 has a laminated structure, all of the pressure-sensitive adhesive layers in the laminated structure may be a pressure-sensitive adhesive force-reducing pressure-sensitive adhesive layer, and a part of the pressure-sensitive adhesive layer in the laminated structure may be a pressure-

The pressure-sensitive adhesive layer (radiation-cured radiation-curable pressure-sensitive adhesive layer) in which the pressure-sensitive adhesive layer (radiation-uncured radiation-curable pressure-sensitive adhesive layer) formed of a radiation-curable pressure- It is possible to exhibit the minimum necessary adhesive force to the pressure-sensitive adhesive layer of the dicing tape in the dicing step or the like. When the radiation-cured radiation-curable pressure-sensitive adhesive layer is used, the entirety of the pressure-sensitive adhesive layer 12 may be a radiation-cured pressure-sensitive adhesive layer in the face-up direction of the pressure-sensitive adhesive layer 12, The radiation-curable pressure-sensitive adhesive layer may be a radiation-cured pressure-sensitive adhesive layer, and the other portion may be a radiation curable pressure-sensitive adhesive layer not irradiated with radiation. In the present specification, the term "radiation-curing pressure-sensitive adhesive layer" refers to a pressure-sensitive adhesive layer formed of a radiation-curing pressure-sensitive adhesive, and includes a radiation-curing radiation-curing pressure-sensitive adhesive layer having radiation curability and a radiation curing And a complete radiation-curable pressure-sensitive adhesive layer.

As the pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer, known pressure-sensitive pressure-sensitive adhesives can be used, and acrylic pressure-sensitive adhesives or rubber pressure-sensitive adhesives having an acrylic polymer as a base polymer can be preferably used. When the pressure-sensitive adhesive layer 12 contains an acrylic polymer as the pressure-sensitive adhesive, it is preferable that the acrylic polymer is a polymer containing the constituent unit derived from the (meth) acrylic acid ester as the largest structural unit in the mass ratio. As the acrylic polymer, for example, an acrylic polymer described as an acrylic polymer that can be contained in the additive type radiation curable pressure-sensitive adhesive described above can be employed.

The pressure-sensitive adhesive agent for forming the pressure-sensitive adhesive layer 12 or the pressure-sensitive adhesive layer 12 is used for a known or common pressure-sensitive adhesive layer such as a crosslinking accelerator, a tackifier, an antioxidant, a colorant May be blended. As the coloring agent, for example, there can be mentioned a compound which is colored by irradiation with radiation. In the case of containing a compound that is colored by irradiation, only the irradiated portion can be colored. The compound that is colored by irradiation with radiation is a colorless or pale color before being irradiated with radiation but a compound which becomes colored by irradiation with radiation, and examples thereof include leuco dyes and the like. The amount of the compound that is colored by irradiation with the radiation is not particularly limited and may be appropriately selected.

The thickness of the pressure-sensitive adhesive layer 12 is not particularly limited. However, when the pressure-sensitive adhesive layer 12 is a pressure-sensitive adhesive layer formed of a radiation-curing pressure-sensitive adhesive, the thickness of the adhesive layer 12 before and after the radiation- It is preferably about 1 to 50 mu m, more preferably 2 to 30 mu m, and still more preferably 5 to 25 mu m from the viewpoint of balancing the adhesive force.

The dicing die-bonding film 1 may have a separator. Specifically, it may be in the form of a sheet having a separator for each dicing die-bonding film 1, a separator is an elongate body, a plurality of dicing die-bonding films 1 are disposed thereon, and the separator is wound It may be in the form of a roll. The separator is an element for covering and protecting the surface of the adhesive layer 20 of the dicing die-bonding film 1. When the dicing die-bonding film 1 is used, the separator is peeled from the film. As the separator, for example, a plastic film or paper surface-coated with a releasing agent such as a polyethylene terephthalate (PET) film, a polyethylene film, a polypropylene film, a fluorine releasing agent or a long chain alkyl acrylate releasing agent can be given. The thickness of the separator is, for example, 5 to 200 mu m.

The dicing die-bonding film 1, which is one embodiment of the dicing die-bonding film of the present invention, is manufactured, for example, as follows. First, the base material 11 can be obtained by forming a film by a known film forming method. Examples of the film forming method include a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T die extrusion method, a co-extrusion method, a dry lamination method and the like.

Subsequently, a composition (pressure-sensitive adhesive composition) for forming a pressure-sensitive adhesive layer including a pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 and a solvent and the like is applied on the base material 11 to form a coating film, The pressure-sensitive adhesive layer 12 can be formed by solidifying the coating film by curing or the like. Examples of the application method include known or common application methods such as roll coating, screen coating, gravure coating, and the like. The desolvation condition is, for example, carried out at a temperature of 80 to 150 캜 for a time of 0.5 to 5 minutes. Further, the pressure-sensitive adhesive composition may be coated on the separator to form a coating film, and then the coating film may be solidified under the desolvation conditions to form the pressure-sensitive adhesive layer 12. Thereafter, the pressure-sensitive adhesive layer 12 is bonded to the base material 11 together with the separator. Thus, the dicing tape 10 can be manufactured.

First, a composition (adhesive composition) for forming an adhesive layer 20 including a thermosetting component, a filler, a curing accelerator, a solvent, and the like is prepared on the adhesive layer 20. Subsequently, the adhesive composition is coated on the separator to form a coating film, and then the coating film is solidified by desolvation or curing, if necessary, to form the adhesive layer 20. The coating method is not particularly limited, and examples thereof include known coating methods such as roll coating, screen coating, and gravure coating. The desolvation condition is, for example, carried out at a temperature of 70 to 160 DEG C for 1 to 5 minutes.

Subsequently, the separator is peeled off from the dicing tape 10 and the adhesive layer 20, respectively, and the adhesive layer 20 and the pressure-sensitive adhesive layer 12 are bonded together. The bonding can be performed by, for example, compression bonding. At this time, the temperature of the laminate is not particularly limited, and is preferably, for example, 30 to 50 ° C, more preferably 35 to 45 ° C. The line pressure is not particularly limited, and is preferably 0.1 to 20 kgf / cm, more preferably 1 to 10 kgf / cm, for example.

As described above, when the pressure-sensitive adhesive layer 12 is a radiation-curable pressure-sensitive adhesive layer, when irradiating the pressure-sensitive adhesive layer 12 with radiation such as ultraviolet rays after bonding of the adhesive layer 20, The pressure-sensitive adhesive layer 12 is irradiated with radiation, and its dose is, for example, 50 to 500 mJ, and preferably 100 to 300 mJ. The area (irradiation area R) where the irradiation of the adhesive layer 12 in the dicing die-bonding film 1 is performed as a measure for reducing the adhesive force is usually carried out in the adhesive layer 20, Is an area excluding the periphery of the area. In the case where the irradiation region R is partially formed, it can be performed with a photomask having a pattern corresponding to the region except for the irradiation region R interposed therebetween. It is also possible to form the irradiation area R by spot irradiation with radiation.

Thus, for example, the dicing die-bonding film 1 shown in Fig. 1 can be manufactured.

The dicing die-bonding film 1 can be used for manufacturing a semiconductor device. Specifically, it is as described in the semiconductor device manufacturing method described later. The adhesive layer 20 in the dicing die-bonding film 1 is embedded in the semiconductor device to be manufactured. More specifically, it is preferable to use the adhesive for bonding the semiconductor chip and the adherend and / or for bonding the semiconductor chips to each other, and more preferably, (c), the semiconductor device is used for the purpose of adhering an adherend to a semiconductor chip and / or for bonding the semiconductor chips in a semiconductor device (multi-layered semiconductor device) in which semiconductor chips are stacked in a multi-stage. As shown in Figs. 7 (b1), 7 (b2) and 7 (c), the adhesive layer 20 is used at least for the overhang portion in the multi- .

[Method of Manufacturing Semiconductor Device]

By using the dicing die-bonding film of the present invention, a semiconductor device can be manufactured. Specifically, a step of affixing a semiconductor wafer, which is divided into a plurality of semiconductor chips, or a semiconductor wafer which can be separated into a plurality of semiconductor chips, onto the adhesive layer side of the dicing die-bonding film of the present invention The dicing tape in the dicing die-bonding film of the present invention is extruded under at least relatively low temperature conditions, and at least the adhesive layer is cut to form a semiconductor chip having an adhesive layer, (Referred to as " process B ") and a step of expanding the dicing tape to widen the gap between the semiconductor chips with adhesive layer (under the condition of relatively high temperature , And a step of picking up the semiconductor chip with adhesive layer (sometimes referred to as " step D ") By this, it is possible to manufacture a semiconductor device.

A divided body of the semiconductor wafer including the plurality of semiconductor chips used in the step A, or a semiconductor wafer which can be separated into a plurality of semiconductor chips can be obtained as follows. First, as shown in Figs. 2A and 2B, a dividing groove 30a is formed in the semiconductor wafer W (dividing groove forming step). The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) are already formed on the first surface Wa side of the semiconductor wafer W and a wiring structure or the like (not shown) necessary for the semiconductor element is formed on the first surface Wa Has already been formed. Then, after the wafer processing tape T1 having the adhesive surface T1a is bonded to the second surface Wb side of the semiconductor wafer W, the semiconductor wafer W is held on the wafer processing tape T1 A dividing groove 30a having a predetermined depth is formed on the first surface Wa side of the semiconductor wafer W by using a rotating blade such as a dicing machine. The dividing groove 30a is a gap for separating the semiconductor wafer W into semiconductor chip units (in Figs. 2 to 4, the dividing groove 30a is schematically shown by a thick line).

Next, as shown in Fig. 2 (c), the bonding of the wafer processing tape T2 having the adhesive surface T2a to the first surface Wa side of the semiconductor wafer W and the bonding of the semiconductor wafer W ) Is peeled off from the wafer processing tape (T1).

2 (d), the semiconductor wafer W is held on the wafer processing tape T2 until the semiconductor wafer W reaches the predetermined thickness, while the semiconductor wafer W is held on the second surface Wb ) (Wafer thinning step). The grinding process can be performed using a grinding machine equipped with a grinding wheel. By this wafer thinning step, a semiconductor wafer 30A that can be separated into a plurality of semiconductor chips 31 is formed in the present embodiment. Specifically, the semiconductor wafer 30A has a portion (connection portion) for connecting a portion to be separated into a plurality of semiconductor chips 31 in the wafer on the second surface Wb side. The distance between the second surface Wb of the semiconductor wafer 30A and the tip end of the dividing groove 30a on the second surface Wb side of the semiconductor wafer 30A is set to be, Mu] m, preferably 3 to 20 [mu] m.

(Process A)

In the step A, a divided body of a semiconductor wafer including a plurality of semiconductor chips or a semiconductor wafer which can be separated into a plurality of semiconductor chips is attached to the adhesive layer 20 side of the dicing die-bonding film 1 .

3A, the semiconductor wafer 30A held on the wafer processing tape T2 is adhered to the adhesive layer (not shown) of the dicing die bonding film 1 20). Thereafter, as shown in Fig. 3 (b), the wafer processing tape T2 is peeled from the semiconductor wafer 30A. In the case where the pressure-sensitive adhesive layer 12 of the dicing die-bonding film 1 is a radiation-curing pressure-sensitive adhesive layer, in place of the above-described radiation irradiation in the production process of the dicing die- The adhesive layer 12 may be irradiated with radiation such as ultraviolet rays from the substrate 11 side after bonding the adhesive layer 20 to the adhesive layer 20. [ The irradiation amount is, for example, 50 to 500 mJ / cm 2, and preferably 100 to 300 mJ / cm 2. The area (irradiation area R shown in Fig. 1) in which irradiation of the pressure sensitive adhesive layer 12 in the dicing die-bonding film 1 is performed as a measure for reducing the adhesive force is performed in the same manner as in the pressure sensitive adhesive layer 12 Is a region excluding the periphery of the bonding region of the adhesive layer (20).

(Step B)

In the process B, the dicing tape 10 in the dicing die-bonding film 1 is expanded under a relatively low temperature condition to cut at least the adhesive layer 20 to obtain a semiconductor chip having an adhesive layer.

In the embodiment of the process B, first, the ring frame 41 is attached to the pressure-sensitive adhesive layer 12 of the dicing tape 10 in the dicing die-bonding film 1, the dicing die-bonding film 1 carrying the semiconductor wafer 30A is fixed to the holding support 42 of the expanding device, as shown in Fig.

4 (b), the semiconductor wafer 30A is divided into a plurality of semiconductor chips 31. Then, the semiconductor wafer 30 is divided into a plurality of semiconductor chips 31, The adhesive layer 20 of the dicing die-bonding film 1 is cut into the adhesive layer 21 of small pieces to obtain the semiconductor chip 31 having the adhesive layer. In the cooling and exposing process, the hollow cylinder-shaped push-up member 43 provided in the expanding device is brought into contact with the dicing tape 10 at the lower side of the drawing of the dicing die-bonding film 1, , The dicing tape 10 of the dicing die bonding film 1 to which the semiconductor wafer 30A is bonded is stretched so as to extend in the two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30A . This expanse is performed under the condition that tensile stress is generated in the dicing tape 10 in the range of 15 to 32 MPa, preferably 20 to 32 MPa. The temperature condition in the Cool Expansion process is, for example, 0 deg. C or less, preferably -20 to -5 deg. C, more preferably -15 to -5 deg. C, and further preferably -15 deg. The expand speed (the speed at which the lifting member 43 is lifted) in the cooling expansion process is preferably 0.1 to 100 mm / sec. The expanded amount in the Cool Expand process is preferably 3 to 16 mm.

In the step B, when a semiconductor wafer 30A which can be separated into a plurality of semiconductor chips is used, cut-off occurs in a part of the semiconductor wafer 30A which is thin and is likely to be split, leading to fragmentation into the semiconductor chip 31 . Along with this, in the process B, deformation is suppressed in each region where the semiconductor chips 31 are closely attached to the adhesive layer 20 adhering to the pressure-sensitive adhesive layer 12 of the dicing tape 10 to be expanded On the other hand, a tensile stress generated in the dicing tape 10 acts in a position in the vertical direction of the dividing groove between the semiconductor chips 31 in a state where such deformation suppressing action does not occur. As a result, portions located in the vertical direction of the dividing grooves between the semiconductor chips 31 in the adhesive layer 20 are cut off. After lifting by expanding, the lifting member 43 is lowered to release the expanded state of the dicing tape 10 as shown in Fig. 4 (c).

(Step C)

In step C, the dicing tape 10 is expanded under a relatively high temperature condition to widen the gap between the semiconductor chips with adhesive layers.

In one embodiment of the process C, first, a second expand process (room temperature expansion process) is performed as shown in FIG. 5A under a relatively high temperature condition to form a semiconductor chip with an adhesive layer 31). In step C, the hollow cylinder-shaped push-up member 43 provided in the expanding apparatus is lifted again to expose the dicing tape 10 of the dicing die-bonding film 1. The temperature condition in the second expansion step is, for example, 10 ° C or higher, and preferably 15 to 30 ° C. The expand speed (the speed at which the lifting member 43 is lifted) in the second expanding process is, for example, 0.1 to 10 mm / sec, preferably 0.3 to 1 mm / sec. The amount of expanded in the second expanding step is, for example, 3 to 16 mm. The separation distance of the semiconductor chip 31 with an adhesive layer is extended in Step C to such an extent that the semiconductor chip 31 with an adhesive layer can be properly picked up from the dicing tape 10 in the pickup process to be described later. The expanding member 43 is lowered to release the expanded state of the dicing tape 10 as shown in Fig. 5 (b) after expanding the separation distance by expanding. From the viewpoint of suppressing the narrowing of the separation distance of the semiconductor chip 31 having the adhesive layer on the dicing tape 10 after releasing the expanded state, It is preferable to heat and shrink the portion of the semiconductor chip 31 located outside the holding region.

After the step C, the semiconductor chip 31 side of the dicing tape 10 carrying the adhesive-layered semiconductor chip 31 may be cleaned by using a cleaning liquid such as water, if necessary .

(Step D)

In Process D (pick-up process), the discrete semiconductor chips having an adhesive layer are picked up. In an embodiment of the process D, the semiconductor chip 31 with an adhesive layer is picked up from the dicing tape 10, as shown in Fig. 6, after the cleaning process if necessary. For example, the pin member 44 of the pick-up mechanism is raised on the lower side of the figure of the dicing tape 10 with respect to the semiconductor chip 31 having the adhesive layer to be picked up and the dicing tape 10 is interposed And is then adsorbed and held by the adsorption jig 45. In the pick-up process, the push-up speed of the pin member 44 is, for example, 1 to 100 mm / sec, and the push-up amount of the pin member 44 is, for example, 50 to 3000 m.

The semiconductor device manufacturing method may include steps other than the steps A to D. For example, in one embodiment, as shown in Fig. 7A, the picked-up semiconductor chip 31 with an adhesive layer is bonded to the adherend 51 with the adhesive layer 21 interposed therebetween Good (tentative) process. Examples of the adherend 51 include a lead frame, a TAB (Tape Automated Bonding) film, a wiring board, and a separately manufactured semiconductor chip. The shear adhesive force at 25 占 폚 at the time of hardening of the adhesive layer 21 is preferably 0.2 MPa or more, more preferably 0.2 to 10 MPa with respect to the adherend 51. The structure in which the adhesive layer 21 has a shear adhesive force of 0.2 MPa or more is a structure in which the adhesive layer 21 is bonded to the semiconductor chip 31 or the adherend 51 by ultrasonic vibration or heating in a wire- The occurrence of shear deformation on the bonding surface can be suppressed and wire bonding can be appropriately performed. The shear adhesive force at 175 캜 at the time of hardening of the adhesive layer 21 is preferably 0.01 MPa or more, more preferably 0.01 to 5 MPa with respect to the adherend 51. After the temporary hardening step, the adhesive layer 21 may be hardened by heating, for example, at 130 DEG C for 30 minutes (pre-hardening step).

Subsequently, a terminal portion (not shown) of an electrode pad (not shown) of the semiconductor chip 31 and an adherend 51 are electrically connected through a bonding wire 52 (wire bonding step). Wiring between the electrode pad of the semiconductor chip 31 and the terminal portion of the adherend 51 and the bonding wire 52 can be realized by ultrasonic welding accompanied by heating and the adhesive layer 21 is not thermally cured . As the bonding wire 52, for example, a gold wire, an aluminum wire, a copper wire, or the like can be used. The wire heating temperature in wire bonding is, for example, 80 to 250 占 폚, preferably 80 to 220 占 폚. The heating time is several seconds to several minutes.

When a structure in which the semiconductor chip 31 is laminated in multiple layers with the adhesive layer 21 interposed therebetween is formed on the adherend 51 as shown in Fig. 7 (b1) And a wire bonding process. The semiconductor chip 31 having the adhesive layer picked up is bonded to the adherend 51 with the adhesive layer 21 interposed therebetween (Fig. 7 (a)), Is adhered to the upper surface of the semiconductor chip 31 attached to the adherend 51 through the adhesive layer 21 in the same manner as the temporary hardening step. At this time, the electrode pad on the upper surface of the semiconductor chip 31 fixedly attached to the adherend 51 is avoided and is shifted in the surface enlarging direction. This additional hardening is repeated a plurality of times (temporary hardening step). Thereafter, if necessary, the plurality of adhesive layers 21 are hardly cured through the pre-curing process, and then wire bonding is performed on each of the semiconductor chips 31 in the same manner as the wire bonding step (wire bonding step).

In the multi-layered structure of the semiconductor chip 31 shown in Fig. 7 (b1), the adhesive-layer-provided semiconductor chip 31 is formed as one unit so as to avoid the wiring portion, (right direction in the case (b1)). In such a multi-layer laminated structure, the uppermost semiconductor chip 31a is wire-bonded to the overhang portion. 7 (b2), in order to prevent the multi-layered laminate structure from being excessively widened in the face enlarging direction of the semiconductor chip 31, the semiconductor chip 31 with an adhesive layer 31 (For example, the right direction), and the direction of shifting is reversed to some extent in the stacking step so as to be shifted in the other surface enlarging direction (for example, the left direction) And a stacked layered structure. In this type of multi-layer laminated structure, the semiconductor chip 31a at the uppermost stage and the semiconductor chip 31b at the portion for reversing the stacking direction are wire-bonded to the overhanging portion.

7 (c), the semiconductor chip 31 is sealed with the sealing resin 53 for protecting the respective semiconductor chips 31 and the bonding wires 52 on the adherend 51. Then, (Sealing step). In the sealing step, the adhesive layer 21 is thermally cured. In the sealing step, a sealing resin 53 is formed by a transfer molding technique using, for example, a metal mold. As the constituent material of the sealing resin 53, for example, an epoxy resin can be used. In the sealing step, the heating temperature for forming the sealing resin 53 is, for example, 165 to 185 占 폚, and the heating time is, for example, 60 seconds to several minutes. In the case where the sealing resin 53 is not sufficiently cured in the sealing step, a post-curing step is performed to completely cure the sealing resin 53 after the sealing step. Even when the adhesive layer 21 is not completely thermally cured in the sealing step, complete thermosetting of the adhesive layer 21 together with the sealing resin 53 in the post-curing step becomes possible. In the post-curing process, the heating temperature is, for example, 165 to 185 占 폚, and the heating time is, for example, 0.5 to 8 hours.

In the above embodiment, as described above, after the semiconductor chip 31 with an adhesive layer is attached to the adherend 51, the wire bonding process is performed without thermally curing the adhesive layer 21 completely. In place of such a configuration, in the above-described method for manufacturing a semiconductor device, the semiconductor chip 31 with an adhesive layer may be attached to the adherend 51, and then the adhesive layer 21 may be thermally cured and then subjected to a wire bonding process .

In the semiconductor device manufacturing method, as another embodiment, the wafer thinning step shown in Fig. 8 may be performed instead of the wafer thinning step described above with reference to Fig. 2 (d). 8, after the semiconductor wafer W is held on the wafer-processing tape T2, the wafer is subjected to a predetermined process (e.g., The semiconductor wafer divided body 30B including the plurality of semiconductor chips 31 and held by the wafer processing tape T2 is formed by the grinding process from the second surface Wb up to the thickness. The wafer thinning step may be a method (first method) of grinding a wafer until the dividing groove 30a is exposed on the second surface Wb side, A crack is generated between the dividing groove 30a and the second surface Wb by the action of the urging force against the wafer from the rotating grindstone so that the semiconductor wafer divided body 30B (Second method) may be employed. Depending on the method employed, the depth of the dividing groove 30a formed as described above with reference to Figs. 2A and 2B from the first surface Wa is appropriately determined . In Fig. 8, the dividing grooves 30a through the first method, or the dividing grooves 30a through the second method and the cracks following the dividing grooves 30a through the second method are schematically shown by thick lines. In the method for manufacturing the semiconductor device, the semiconductor wafer divided body 30B manufactured in this manner as the semiconductor wafer divided body in the step A is used in place of the semiconductor wafer 30A, And each process may be performed.

9 (a) and 9 (b) are views showing a step of bonding the semiconductor wafer divided body 30B to the dicing die-bonding film 1 after step B in the embodiment, (Cool Expansion process). In the step B of the present embodiment, the hollow cylinder-shaped push-up member 43 of the expanding device is fitted to the dicing tape 10 at the lower side of the drawing of the dicing die- The dicing tape 10 of the dicing die-bonding film 1 to which the semiconductor wafer divided body 30B is bonded is placed in a two-dimensional manner including the radial direction and the circumferential direction of the semiconductor wafer divided body 30B, Expand to stretch in the direction. This expanse is performed under the condition that tensile stress is generated in the dicing tape 10 within a range of, for example, 5 to 28 MPa, preferably 8 to 25 MPa. The temperature condition in the Cool Expansion process is, for example, 0 deg. C or less, preferably -20 to -5 deg. C, more preferably -15 to -5 deg. C, and further preferably -15 deg. The expand speed (the speed at which the lifting member 43 is lifted) in the cooling expansion process is preferably 1 to 400 mm / sec. The amount of expanded in the Cool Expand process is preferably 50 to 200 mm. By this cooling expansion process, the adhesive layer 20 of the dicing die-bonding film 1 is cut into the adhesive layer 21 of a small piece to obtain the semiconductor chip 31 having the adhesive layer. Specifically, in the cool expansion process, the adhesive agent layer 20 adhered to the pressure-sensitive adhesive layer 12 of the dicing tape 10 to be expansed is pressed against the semiconductor chips 31 of the semiconductor wafer divided body 30B, The deformation is suppressed in each of the regions in which the semiconductor chips 31 are adhered to each other. On the other hand, in the portion of the dividing groove 30a between the semiconductor chips 31 located in the vertical direction in the figure, Tensile stress generated in the tape 10 acts. As a result, the portion of the adhesive layer 20 located in the vertical direction in the figure of the dividing groove 30a between the semiconductor chips 31 is cut off.

The semiconductor wafer 30C or the semiconductor wafer 30B to be used in the step A may be replaced by a semiconductor wafer 30C manufactured in the following manner .

In this embodiment, as shown in Figs. 10A and 10B, first, the modified region 30b is formed in the semiconductor wafer W. The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) are already formed on the first surface Wa side of the semiconductor wafer W and a wiring structure or the like (not shown) necessary for the semiconductor element is formed on the first surface Wa Has already been formed. After the wafer processing tape T3 having the adhesive surface T3a is bonded to the first surface Wa side of the semiconductor wafer W and the semiconductor wafer W is held on the wafer processing tape T3 The laser beam whose light-converging point is aligned in the wafer is irradiated to the semiconductor wafer W along the line to be divided from the opposite side of the wafer T3 to the semiconductor wafer W W of the modified region 30b. The modified region 30b is a weakening region for separating the semiconductor wafer W into semiconductor chips. A method of forming the modified region 30b on a line to be divided by laser light irradiation in a semiconductor wafer is described in detail in, for example, Japanese Patent Application Laid-Open No. 2002-192370, Is appropriately adjusted within the range of, for example, the following conditions.

≪ Laser irradiation condition >

(A) Laser light

Laser light source Semiconductor laser excitation Nd: YAG laser

wavelength 1064 nm

Laser light spot cross-sectional area 3.14 x 10 < ^-8 >

Rash type Q switch pulse

Repetition frequency 100kHz or less

Pulse width 1μs or less

Print 1mJ or less

Laser light quality TEM00

Polarization characteristic Linear polarization

(B) a condenser lens

Magnification 100 times or less

NA 0.55

Transmittance to laser light wavelength 100% or less

(C) The moving speed of the loading table on which the semiconductor substrate is loaded 280mm / sec or less

10 (c), the semiconductor wafer W is held on the wafer processing tape T3 until the semiconductor wafer W reaches the predetermined thickness, while the semiconductor wafer W is held on the second surface Wb So as to form a semiconductor wafer 30C which can be separated into a plurality of semiconductor chips 31 (wafer thinning step). In the method for manufacturing the semiconductor device, in the step A, a semiconductor wafer 30C manufactured in this manner as a releasable semiconductor wafer is used in place of the semiconductor wafer 30A, and as described above with reference to Figs. 3 to 7 Each step may be performed.

Figs. 11A and 11B are views showing a step B of the present embodiment, that is, a first expanding step (Fig. 11B) performed after bonding the semiconductor wafer 30C to the dicing die- A cool expansion process). In the cooling and exposing process, the hollow cylinder-shaped push-up member 43 provided in the expanding device is brought into contact with the dicing tape 10 at the lower side of the drawing of the dicing die-bonding film 1, , The dicing tape 10 of the dicing die-bonding film 1 to which the semiconductor wafer 30C is bonded is stretched so as to extend in the two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30C . This expanse is performed under the condition that tensile stress is generated in the dicing tape 10 within a range of, for example, 5 to 28 MPa, preferably 8 to 25 MPa. The temperature condition in the Cool Expansion process is, for example, 0 deg. C or less, preferably -20 to -5 deg. C, more preferably -15 to -5 deg. C, and further preferably -15 deg. The expand speed (the speed at which the lifting member 43 is lifted) in the cooling expansion process is preferably 1 to 400 mm / sec. The amount of expanded in the Cool Expand process is preferably 50 to 200 mm. By this cooling expansion process, the adhesive layer 20 of the dicing die-bonding film 1 is cut into the adhesive layer 21 of a small piece to obtain the semiconductor chip 31 having the adhesive layer. Specifically, in the cooling expansion process, cracks are formed in the weakened modified region 30b of the semiconductor wafer 30C, and the semiconductor chip 31 is fragmented. The semiconductor chips 31 of the semiconductor wafer 30C are adhered to each other in the adhesive layer 20 adhered to the pressure sensitive adhesive layer 12 of the dicing tape 10 to be expanded, The tensile stress generated in the dicing tape 10 in a state in which the deformation is suppressed in each of the regions where the cracks are formed while the deformation is suppressed in the regions where the cracks are formed, Lt; / RTI > As a result, portions of the adhesive layer 20 located in the vertical direction of the cracks formed between the semiconductor chips 31 are cut off.

Further, in the above-described method of manufacturing a semiconductor device, the dicing die-bonding film 1 can be used for obtaining a semiconductor chip having an adhesive layer as described above. However, in the case where a plurality of semiconductor chips are stacked to form a three- It is also possible to use it for obtaining an adhesive layer-provided semiconductor chip. A spacer may be interposed between the semiconductor chips 31 in such a three-dimensional mounting together with the adhesive layer 21, or may not be interposed with the spacer.

<Examples>

Hereinafter, the present invention will be described in more detail with reference to examples, but the present invention is not limited to these examples at all.

Example 1

(Production of dicing tape)

100 parts by mass of 2-ethylhexyl acrylate (2EHA), 19 parts by mass of 2-hydroxyethyl acrylate (HEA), 0.4 part by mass of benzoyl peroxide, and 0.1 part by mass of toluene were placed in a reaction vessel equipped with a stirrer, a thermometer, And polymerization was carried out in a nitrogen stream at 60 占 폚 for 10 hours to obtain a solution containing the acrylic polymer A.

1.2 parts by mass of 2-methacryloyloxyethyl isocyanate (MOI) was added to the solution containing the acrylic polymer A, and an addition reaction was carried out at 50 DEG C for 60 hours in an air stream to obtain an acrylic polymer A '.

Subsequently, 1.3 parts by mass of a polyisocyanate compound (trade name: Coronate L, manufactured by Tosoh Corporation) and 3 parts by mass of a photopolymerization initiator (trade name: Irgacure 184, manufactured by BASF) were added to 100 parts by mass of the acrylic polymer A ' Was added to prepare a pressure-sensitive adhesive composition A.

The obtained pressure-sensitive adhesive composition A was coated on the silicone-treated side of the PET-based separator and heated at 120 캜 for 2 minutes to desolvate to form a pressure-sensitive adhesive layer A having a thickness of 10 탆. Subsequently, an EVA film (manufactured by Gunze Kogyo Co., Ltd., thickness: 125 μm) was bonded to the surface of the pressure-sensitive adhesive layer and stored at 23 ° C for 72 hours to obtain a dicing tape A.

(Preparation of adhesive layer)

(Trade name &quot; KI-3000-4 &quot;, manufactured by Tokto Kasei Kogyo K.K.) was added to 100 parts by mass of an acrylic resin (trade name &quot; TAYASA RESIN SG-70L &quot;, product of Nagase ChemteX Limited, mass- 200 parts by mass of a phenol resin (trade name &quot; MEHC-7851SS &quot;, manufactured by Meiwa Kasei Kabushiki Kaisha), 200 parts by mass of silica filler (trade name: ST-ZL, manufactured by Nissan Kagaku Kogyo K.K., 350 parts by mass (in terms of silica filler) and 2 parts by mass of a curing accelerator (trade name &quot; Cure Sol 2PHZ-PW &quot;, manufactured by Shikoku Kasei Kogyo K.K.) were dissolved in methyl ethyl ketone to obtain a solid content concentration of 30 mass% An adhesive composition A was prepared.

Subsequently, the adhesive composition A was applied onto the silicone release-treated surface of the PET separator (having a thickness of 50 mu m) having the surface subjected to the silicon release treatment to form a coating film, and the coating film was applied to this coating film at 120 DEG C for 2 minutes Followed by desolvation. Thus, an adhesive layer A having a thickness (average thickness) of 10 탆 was formed on a PET separator.

(Production of dicing die-bonding film)

The PET separator was peeled from the dicing tape A and the adhesive layer A was bonded to the exposed pressure-sensitive adhesive layer. In the bonding, the center of the dicing tape and the center of the die-bonding film were aligned. A hand roller was used for bonding. Then, the pressure-sensitive adhesive layer of the dicing tape was irradiated with ultraviolet rays from the EVA base material side. In ultraviolet irradiation, a high pressure mercury lamp was used and the irradiated cumulative light amount was set to 300 mJ / cm 2. Thus, a dicing die-bonding film of Example 1 having a laminated structure including a dicing tape and an adhesive layer was produced.

Example 2

(Preparation of adhesive layer)

(Trade name &quot; KI-3000-4 &quot;, manufactured by Tokto Kasei Kogyo K.K.) was added to 100 parts by mass of an acrylic resin (trade name &quot; TAYASA RESIN SG-70L &quot;, product of Nagase ChemteX Limited, mass- 200 parts by mass of a phenol resin (trade name: MEHC-7851SS, manufactured by Meiwa Kasei K.K.), 200 parts by mass of a silica filler (trade name: MEK-ST-2040, manufactured by Nissan Kagaku Kogyo K.K., 350 parts by mass (in terms of silica filler) and 2 parts by mass of a curing accelerator (trade name &quot; Cure Sol 2PHZ-PW &quot;, manufactured by Shikoku Kasei Kogyo K.K.) were dissolved in methyl ethyl ketone to give a solid content concentration of 30% Was prepared.

Subsequently, the adhesive composition B was applied on the silicone release-treated surface of the PET separator (thickness: 50 占 퐉) having the surface subjected to the silicon release treatment by using an applicator to form a coating film. Followed by desolvation. Thus, an adhesive layer B having a thickness (average thickness) of 10 mu m was formed on a PET separator.

(Production of dicing die-bonding film)

The PET separator was peeled from the dicing tape A and the adhesive layer B was bonded to the exposed pressure-sensitive adhesive layer. In the bonding, the center of the dicing tape and the center of the die-bonding film were aligned. A hand roller was used for bonding. Then, the pressure-sensitive adhesive layer of the dicing tape was irradiated with ultraviolet rays from the EVA base material side. In ultraviolet irradiation, a high pressure mercury lamp was used and the irradiated cumulative light amount was set to 300 mJ / cm 2. Thus, a dicing die-bonding film of Example 2 having a laminated structure including a dicing tape and an adhesive layer was produced.

Example 3

(Preparation of adhesive layer)

(Trade name &quot; KI-3000-4 &quot;, manufactured by Tokto Kasei Kogyo K.K.) was added to 100 parts by mass of an acrylic resin (trade name &quot; TAYASA RESIN SG-70L &quot;, product of Nagase ChemteX Limited, mass- 200 parts by mass of a phenol resin (trade name &quot; MEHC-7851SS &quot;, manufactured by Meiwa Kasei K.K.), 200 parts by mass of a silica filler (trade name: SQ-EM1, manufactured by Admatechs Co., ) And 2 parts by mass of a curing accelerator (trade name &quot; Cure Sol 2PHZ-PW &quot;, manufactured by Shikoku Kasei Kogyo K.K.) were dissolved in methyl ethyl ketone to obtain an adhesive having a solid concentration of 30% by mass Composition C was prepared.

Subsequently, the adhesive composition C was applied on the silicone release-treated surface of the PET separator (thickness: 50 mu m) having the surface subjected to the silicon release treatment by using an applicator to form a coating film. Followed by desolvation. Thus, an adhesive layer C having a thickness (average thickness) of 10 mu m was formed on the PET separator.

(Production of dicing die-bonding film)

The PET separator was peeled from the dicing tape A and the adhesive layer C was bonded to the exposed pressure-sensitive adhesive layer. In the bonding, the center of the dicing tape and the center of the die-bonding film were aligned. A hand roller was used for bonding. Then, the pressure-sensitive adhesive layer of the dicing tape was irradiated with ultraviolet rays from the EVA base material side. In ultraviolet irradiation, a high pressure mercury lamp was used and the irradiated cumulative light amount was set to 300 mJ / cm 2. Thus, a dicing die-bonding film of Example 3 having a laminated structure including a dicing tape and an adhesive layer was produced.

Example 4

(Preparation of adhesive layer)

(Trade name &quot; KI-3000-4 &quot;, manufactured by Tokto Kasei Kogyo K.K.) was added to 100 parts by mass of an acrylic resin (trade name &quot; TAYASA RESIN SG-70L &quot;, product of Nagase ChemteX Limited, mass- 115 parts by mass of a phenol resin (trade name: MEHC-7851SS, manufactured by Meiwa Kasei Kabushiki Kaisha), 115 parts by mass of a silica filler (trade name: MEK-ST-2040, manufactured by Nissan Kagaku Kogyo K.K., And 2 parts by mass of a curing accelerator (trade name &quot; Cure Sol 2PHZ-PW &quot;, manufactured by Shikoku Kasei Kogyo K.K.) were dissolved in methyl ethyl ketone to give a solid content concentration of 28 mass% Was prepared.

Subsequently, the adhesive composition D was applied onto the silicone release-treated surface of a PET separator (thickness: 50 占 퐉) having a surface subjected to silicone release treatment using an applicator to form a coating film. The coating film was applied to this coating film at 120 占 폚 for 2 minutes Followed by desolvation. Thus, an adhesive layer D having a thickness (average thickness) of 10 mu m was formed on a PET separator.

(Production of dicing die-bonding film)

The PET separator was peeled from the dicing tape A and the adhesive layer D was bonded to the exposed pressure-sensitive adhesive layer. In the bonding, the center of the dicing tape and the center of the die-bonding film were aligned. A hand roller was used for bonding. Then, the pressure-sensitive adhesive layer of the dicing tape was irradiated with ultraviolet rays from the EVA base material side. In ultraviolet irradiation, a high pressure mercury lamp was used and the irradiated cumulative light amount was set to 300 mJ / cm 2. Thus, a dicing die-bonding film of Example 4 having a laminated structure including a dicing tape and an adhesive layer was produced.

Example 5

(Preparation of adhesive layer)

(Trade name &quot; KI-3000-4 &quot;, manufactured by Tokto Kasei Kogyo K.K.) was added to 100 parts by mass of an acrylic resin (trade name &quot; TAYASA RESIN SG-70L &quot;, product of Nagase ChemteX Limited, mass- 200 parts by mass of a phenol resin (trade name: MEHC-7851SS, manufactured by Meiwa Kasei K.K.), 200 parts by mass of a silica filler (trade name: MEK-ST-2040, manufactured by Nissan Kagaku Kogyo K.K., 350 parts by mass (in terms of silica filler) and 1 part by mass of a curing accelerator (trade name &quot; Cure Sol 2PHZ-PW &quot;, manufactured by Shikoku Kasei Kogyo K.K.) were dissolved in methyl ethyl ketone to give a solid content concentration of 30% Was prepared.

Subsequently, the adhesive composition E was applied onto the silicone release-treated surface of the PET separator (thickness: 50 mu m) having the surface subjected to the silicon release treatment by using an applicator to form a coating film, and the coating film was applied to this coating film at 120 DEG C for 2 minutes Followed by desolvation. Thus, an adhesive layer E having a thickness (average thickness) of 10 mu m was formed on the PET separator.

(Production of dicing die-bonding film)

The PET separator was peeled from the dicing tape A and the adhesive layer E was bonded to the exposed pressure-sensitive adhesive layer. In the bonding, the center of the dicing tape and the center of the die-bonding film were aligned. A hand roller was used for bonding. Then, the pressure-sensitive adhesive layer of the dicing tape was irradiated with ultraviolet rays from the EVA base material side. In ultraviolet irradiation, a high pressure mercury lamp was used and the irradiated cumulative light amount was set to 300 mJ / cm 2. Thus, a dicing die-bonding film of Example 5 having a laminated structure including a dicing tape and an adhesive layer was produced.

Example 6

(Preparation of adhesive layer)

(Trade name &quot; KI-3000-4 &quot;, manufactured by Tokto Kasei Kogyo K.K.) was added to 100 parts by mass of an acrylic resin (trade name &quot; TAYASA RESIN SG-70L &quot;, product of Nagase ChemteX Limited, mass- 200 parts by mass of a phenol resin (trade name: MEHC-7851SS, manufactured by Meiwa Kasei K. K.) and 200 parts by mass of a silica filler (trade name: SE2050-MCV manufactured by Admatechs Co., ) And 2 parts by mass of a curing accelerator (trade name &quot; Cure Sol 2PHZ-PW &quot;, manufactured by Shikoku Kasei Kogyo K.K.) were dissolved in methyl ethyl ketone to obtain an adhesive having a solid concentration of 30% by mass Composition F was prepared.

Subsequently, the adhesive composition F was applied onto the silicon release-treated surface of the PET separator (thickness: 50 占 퐉) having the surface subjected to the silicon release treatment to form a coating film, and the coating film was applied to this coating film at 120 占 폚 for 2 minutes Followed by desolvation. Thus, an adhesive layer F having a thickness (average thickness) of 10 mu m was formed on a PET separator.

(Production of dicing die-bonding film)

The PET separator was peeled from the dicing tape A and the adhesive layer F was bonded to the exposed pressure-sensitive adhesive layer. In the bonding, the center of the dicing tape and the center of the die-bonding film were aligned. A hand roller was used for bonding. Then, the pressure-sensitive adhesive layer of the dicing tape was irradiated with ultraviolet rays from the EVA base material side. In ultraviolet irradiation, a high pressure mercury lamp was used and the irradiated cumulative light amount was set to 300 mJ / cm 2. Thus, a dicing die-bonding film of Example 6 having a laminated structure including a dicing tape and an adhesive layer was produced.

Example 7

(Preparation of adhesive layer)

(Trade name &quot; KI-3000-4 &quot;, manufactured by Tokto Kasei Kogyo K.K.) was added to 100 parts by mass of an acrylic resin (trade name &quot; TAYASA RESIN SG-70L &quot;, product of Nagase ChemteX Limited, mass- 440 parts by mass of a phenol resin (trade name: MEHC-7851SS, manufactured by Meiwa Kasei Kogyo K.K.), 440 parts by mass of a silica filler (trade name: MEK-ST-2040, manufactured by Nissan Kagaku Kogyo K.K.) And 3 parts by mass of a curing accelerator (trade name &quot; Cure Sol 2PHZ-PW &quot;, manufactured by Shikoku Kasei Kogyo K.K.) were dissolved in methyl ethyl ketone to give a solid content concentration of 30 mass% Was prepared.

Subsequently, the adhesive composition G was applied on the silicone release-treated surface of the PET separator (thickness: 50 占 퐉) having the surface subjected to the silicon release treatment to form a coating film, and the coating film was dried at 120 占 폚 for 2 minutes Followed by desolvation. Thus, an adhesive layer G having a thickness (average thickness) of 10 mu m was formed on a PET separator.

(Production of dicing die-bonding film)

The PET separator was peeled from the dicing tape A and the adhesive layer G was bonded to the exposed pressure-sensitive adhesive layer. In the bonding, the center of the dicing tape and the center of the die-bonding film were aligned. A hand roller was used for bonding. Then, the pressure-sensitive adhesive layer of the dicing tape was irradiated with ultraviolet rays from the EVA base material side. In ultraviolet irradiation, a high pressure mercury lamp was used and the irradiated cumulative light amount was set to 300 mJ / cm 2. Thus, a dicing die-bonding film of Example 7 having a laminated structure including a dicing tape and an adhesive layer was produced.

Comparative Example 1

(Preparation of adhesive layer)

(Trade name &quot; KI-3000-4 &quot;, manufactured by Tokto Kasei Kogyo K.K.) was added to 100 parts by mass of an acrylic resin (trade name &quot; TAYASA RESIN SG-70L &quot;, product of Nagase ChemteX Limited, mass- 200 parts by mass of a phenol resin (trade name: MEHC-7851SS, manufactured by Meiwa Kasei K.K.), 200 parts by mass of silica filler (trade name: YA050C-MJF, manufactured by Admatechs Co., ) And 2 parts by mass of a curing accelerator (trade name &quot; Cure Sol 2PHZ-PW &quot;, manufactured by Shikoku Kasei Kogyo K.K.) were dissolved in methyl ethyl ketone to obtain an adhesive having a solid concentration of 30% by mass Composition H was prepared.

Subsequently, the adhesive composition H was applied onto the silicone release-treated surface of the PET separator (thickness: 50 占 퐉) having the surface subjected to the silicon release treatment by using an applicator to form a coating film. Followed by desolvation. Thus, an adhesive layer H having a thickness (average thickness) of 20 mu m was formed on a PET separator.

(Production of dicing die-bonding film)

The PET separator was peeled from the dicing tape A and the adhesive layer H was bonded to the exposed pressure-sensitive adhesive layer. In the bonding, the center of the dicing tape and the center of the die-bonding film were aligned. A hand roller was used for bonding. Then, the pressure-sensitive adhesive layer of the dicing tape was irradiated with ultraviolet rays from the EVA base material side. In ultraviolet irradiation, a high pressure mercury lamp was used and the irradiated cumulative light amount was set to 300 mJ / cm 2. Thus, a dicing die-bonding film of Comparative Example 1 having a laminated structure including a dicing tape and an adhesive layer was produced.

Comparative Example 2

(Preparation of adhesive layer)

(Trade name &quot; KI-3000-4 &quot;, manufactured by Tokto Kasei Kogyo K.K.) was added to 100 parts by mass of an acrylic resin (trade name &quot; TAYASA RESIN SG-70L &quot;, product of Nagase ChemteX Limited, mass- 200 parts by mass of a phenol resin (trade name: MEHC-7851SS, manufactured by Meiwa Kasei K.K.), 200 parts by mass of a silica filler (trade name: MEK-ST-2040, manufactured by Nissan Kagaku Kogyo K.K., 350 parts by mass (average particle diameter: 190 nm) (in terms of silica filler) and 0.5 part by mass of a curing accelerator (trade name "Curezol 2PHZ-PW", manufactured by Shikoku Kasei Kogyo K.K.) were dissolved in methyl ethyl ketone, Was prepared. &Lt; tb &gt; &lt; TABLE &gt;

Subsequently, the adhesive composition I was applied on the silicone release-treated surface of the PET separator (thickness: 50 占 퐉) having the surface subjected to the silicon release treatment to form a coating film, and the coating film was applied to this coating film at 120 占 폚 for 2 minutes Followed by desolvation. Thus, an adhesive layer I having a thickness (average thickness) of 10 탆 was formed on a PET separator.

(Production of dicing die-bonding film)

The PET separator was peeled from the dicing tape A and the adhesive layer I was bonded to the exposed pressure-sensitive adhesive layer. In the bonding, the center of the dicing tape and the center of the die-bonding film were aligned. A hand roller was used for bonding. Then, the pressure-sensitive adhesive layer of the dicing tape was irradiated with ultraviolet rays from the EVA base material side. In ultraviolet irradiation, a high pressure mercury lamp was used and the irradiated cumulative light amount was set to 300 mJ / cm 2. Thus, a dicing die-bonding film of Comparative Example 2 having a laminated structure including a dicing tape and an adhesive layer was produced.

<Evaluation>

The following evaluations were performed on the adhesive layer and the dicing die-bonding film obtained in Examples and Comparative Examples. The results are shown in Table 1.

(Heating value before heating)

Each of the adhesive layers obtained in Examples and Comparative Examples was weighed in an amount of 10 to 15 mg to obtain a measurement sample. Using a differential scanning calorimeter (trade name &quot; Q200 &quot;, manufactured by TA Instruments) The temperature was raised to 350 占 폚 at a rate of 10 占 폚 / min to perform DSC measurement, and the total calorific value [J / g] at that time was calculated to be the calorific value before heating.

(Heating value after heating at 130 DEG C for 30 minutes)

The adhesive layer obtained in each of Examples and Comparative Examples was laminated so as to have a thickness of 200 mu m and heated in a pressure oven from room temperature to 130 DEG C over 30 minutes and held at 130 DEG C for 30 minutes. During the heating, pressurization with a gas of 7 kgf was performed. The heating value [J / g] after heating at 130 占 폚 for 30 minutes was calculated in the same manner as the above "heating value before heating" except that the adhesive layer after heating was used in this way.

(Storage elastic modulus)

The adhesive layer obtained in each of the examples and the comparative examples was laminated so as to have a thickness of 200 탆 and the sample heated and pressurized in the same manner as the above "heating amount after heating at 130 캜 for 30 minutes" The test piece was cut into a rectangular shape having a width of 4 mm and a length of 30 mm and cut out with a cutter knife to obtain a test piece having a frequency of 1 Hz and a temperature raising rate of 10 ° C./minute using a solid viscoelasticity measuring device (measuring device: RSA-G2, Rheometrics Scientific) The dynamic storage modulus was measured in a tensile mode at a temperature range of 0 to 200 캜 under the condition of a distance between the chucks of 10 mm and a strain of 0.1%. Also, the temperature rise was started after holding for 5 minutes at 0 占 폚. Then, the value at 130 캜 was read, and this value was taken as the storage elastic modulus [MPa] at 130 캜 after heating at 130 캜 for 30 minutes.

(Average particle diameter of filler)

Each adhesive layer obtained in each of Examples and Comparative Examples was thermally cured at 175 DEG C for 1 hour and embedded in a resin using an EpoFix kit manufactured by Struers. The end face of the adhesive layer was exposed by mechanical polishing of the embedded resin, and the end face was subjected to ion milling with a CP processing apparatus (trade name "SM-09010", manufactured by Nihon Denshikushi Co., Ltd.) FE-SEM observation was performed. FE-SEM observation was performed at an acceleration voltage of 1 to 5 kV, and a reflected electron image was observed. The introduced image is identified by the binarization processing using the image analysis software "Image-J", the area of the filler in the image is divided by the number of fillers in the image to obtain the average area of the filler, And the particle diameter was calculated.

(Chip stack evaluation)

An adhesive layer F having a thickness of 25 mu m was prepared in the same manner as in Example 6 to obtain an adhesive sheet. This adhesive sheet was bonded to a mirror wafer on which a modified region for the line to be divided was formed by laser light irradiation and cured at 175 DEG C for 2 hours and then the total thickness of the mirror wafer and the adhesive sheet became 50 mu m Until the wafer was grinded from the mirror wafer side. The dicing die-bonding film obtained in each of the examples and the comparative example was subjected to the above-mentioned grinding and bonding of the wafer and the dicing ring (wafer bonding temperature: 50 to 80 캜), followed by the use of a die separator (trade name &quot; DDS2300 &quot; Disco Co., Ltd.) was used to cut off the wafer and heat shrinkage of the dicing tape to obtain a sample. That is, first, in the cool expander unit, the wafers were cut under conditions of an expan- sion temperature of -15 ° C, an expan- sion speed of 100 mm / sec, and an expan- sion of 12 mm. The chips obtained after the cutting were 10 mm × 10 mm in size and 25 μm in chip thickness. Thereafter, in the heat expander unit, the dicing tape was thermally shrunk under the conditions of an expansive 10 mm, a heat temperature of 250 ° C, an air flow rate of 40 L / min, a heat distance of 20 mm, and a rotation speed of 3 ° / .

The chip with evaluation of the adhesive layer was subjected to a BGA (die bonding) test under the conditions of a die temperature of 90 DEG C, a die bond load of 1000 gf and a die bond time of 1 second using a die bonder (trade name &quot; Die Bonder SPA- 300 &quot; Five sheets were stacked in a step-like manner on a substrate (material: AUS308) and die-bonded. The stacking was made step-wise by shifting by 200 mu m in the same direction. After lamination, no peeling was evaluated as &amp; cir &amp;, peeling in one portion was evaluated as DELTA, and peeling in two or more portions was evaluated as x.

(Wire bonding evaluation)

A wafer having one surface was aluminum-deposited was ground to obtain a dicing wafer having a thickness of 30 탆. The dicing wafer was attached to the adhesive layer side of the dicing die-bonding film obtained in each of the examples and the comparative examples, and then the wafer was cut in the same manner as in the &quot; chip lamination evaluation &quot; Five sheets of the obtained adhesive layer-provided chips were stacked on the Cu lead frame under the conditions of a stage temperature of 90 占 폚, a die bond load of 1000 gf, and a die bonding time of 1 second and die-bonded. The stacking was made step-wise by shifting by 200 mu m in the same direction. The laminate after the die bonding was heated and cured at 130 캜 for 30 minutes and thereafter the Au wire with a wire diameter of 18 탆 was attached to the overhang portion of the uppermost chip by using a wire bonding machine (trade name "Maxum Plus", manufactured by Culiche &amp; . Au wire was printed on the Cu lead frame under conditions of output 80 Amp, time 10 ms, and load 50 g. Further, the Au wire was taken on the chip under conditions of a temperature of 130 ° C, an output of 125 Amps, a time of 10 ms, and a load of 80 g. A case in which one or more of the five Au wires could not be bonded to the chip was judged as X, and a case in which five of the five Au wires were bonded to the chip was judged as?.

(Storage stability evaluation)

The preservability was evaluated by changing the viscosity with time. The initial viscosity at 90 deg. C after the production of the adhesive layer obtained in each of Examples and Comparative Examples is referred to as initial viscosity and the viscosity at 90 deg. C of the adhesive layer after storage for 28 days at 23 deg. (Pa.s) - Initial viscosity (Pa.s) / Initial viscosity (Pa.s) 100 (%) at 90 deg. C after storage for 28 days at 23 deg. , And the case where the viscosity increase rate was less than 100% was evaluated as &amp; cir &amp;, the case where the viscosity increase rate was less than 150% was evaluated as DELTA, and the case of not less than 150% was evaluated as x. The viscosity was measured by a rotary viscometer (trade name: HAAKE MARS III, manufactured by Thermo Scientific Co.). The measurement conditions were a gap of 100 탆, a diameter of a rotating plate of 8 mm, a temperature raising rate of 10 캜 / min, a deformation of 10%, and a frequency of 5 rad / sec.

The adhesive layers of Examples 1 to 7 exhibited a small rate of increase in viscosity and excellent storage stability and showed a smaller calorific value after heating for heating than those of Comparative Examples 1 and 2 and could be cured in a short time. Further, after curing, the elastic modulus at 130 占 폚 was high, and it was possible to conduct appropriate wire bonding to the overhanging portion.

1: Dicing die-bonding film
10: Dicing tape
11: substrate
12: pressure-sensitive adhesive layer
20, 21: adhesive layer
W, 30A, and 30C: semiconductor wafers
30B: Semiconductor wafer parted body
30a: Split groove
30b: modified region
31: Semiconductor chip

Claims (4)

A dicing tape having a laminated structure including a substrate and a pressure-sensitive adhesive layer;
And an adhesive layer in close contact with the pressure-sensitive adhesive layer in the dicing tape so as to be removable,
Wherein the adhesive layer contains a thermosetting component, a filler and a curing accelerator, and the heat generation amount by DSC measurement after heating at 130 占 폚 for 30 minutes is 60% or less of the heat generation amount before heating, and the storage modulus Is not less than 20 MPa and not more than 4000 MPa. The dicing die-bonding film according to claim 1, wherein the thermosetting component is a thermosetting resin and / or a thermoplastic resin containing a thermosetting functional group. The dicing die-bonding film according to claim 1 or 2, wherein the pressure-sensitive adhesive layer has a viscosity at 90 캜 of 300 to 100000 Pa 占 퐏. The dicing die-bonding film according to claim 1 or 2, wherein the filler is silica having an average particle diameter of 70 to 300 nm.

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