KR20200068589A - Dicing die bond film - Google Patents

Abstract

The present invention provides a dicing die bond film (DDAF) wherein the DDAF is suitable for achieving good cleaving in an expansion process using the DDAF for obtaining a semiconductor chip with a die bond film, and for ensuring a sufficient notch width for the cleavage position between chips. The DDAF of the present invention has a laminated structure including a die bond film (10) and a dicing tape (20). The die bond film (10) is releasably bonded to the adhesive layer (22) of the dicing tape (20). The breaking elongation of the die bond film (10) in a tensile test performed under predetermined conditions is 20% or less. The die bond film (10) has a disc shape having a diameter of D_1 and includes a wafer attaching area having a diameter of D_2 and concentric with the disc shape, where 0 < (D_1-D_2)/D_2 < 1. The dicing tape (20) has a breaking elongation of 120% or more in a tensile test conducted under predetermined conditions.

Description

Dicing die bond film {DICING DIE BOND FILM}

The present invention relates to a dicing die bond film that can be used in the manufacturing process of a semiconductor device.

In the manufacturing process of a semiconductor device, a dicing die bond film may be used in order to obtain a semiconductor chip with an adhesive film of a size equivalent to a die bonding chip, that is, a semiconductor chip provided with a die bond film. The dicing die bond film has, for example, a dicing tape composed of a base material and an adhesive layer, and a die bond film that is adhered to the adhesive layer side so as to be peelable.

As a method of obtaining a semiconductor chip with a die-bonding film using a dicing die-bonding film, a method of expanding a dicing tape in a dicing die-bonding film to undergo a step of cutting a die-bonding film is known. have.

In this method, first, a semiconductor wafer is bonded onto a die bond film of a dicing die bond film. The die bond film has a disc shape having a size that exceeds that of the semiconductor wafer. The semiconductor wafer is, for example, later cut together with a die bond film to be processed into individual semiconductor chips.

Next, in order to cut the die bond film so that a plurality of pieces of the adhesive film, each of which is in close contact with the semiconductor chip, arises from the die bond film on the dicing tape, an expander is used to die the dicing die bond film. The sing tape is stretched in two-dimensional directions including the radial direction and the circumferential direction of the semiconductor wafer. In this expansion step, the breakage occurs also in the semiconductor wafer on the die bond film at a position corresponding to the breakage point in the die bond film, and the semiconductor wafer is divided into pieces on the dicing die bond film or on the dicing tape. do.

For the dicing die bond film stretched and relaxed in the expand process, the peripheral area around the semiconductor wafer in it is heated and shrunk (heat shrink process). Thereby, the region (wafer bonding region) inside the peripheral region of the die-bonding film reaches a state in which a predetermined degree of tension acts. This heat shrink process is performed for the purpose of securing the separation distance between the semiconductor chips that have been cut in the above-explained process, that is, the so-called cuff width.

Next, for example, after the cleaning process, each semiconductor chip is pushed up by the pin member of the pick-up mechanism from the lower side of the dicing tape together with the die-bonding film of the chip equivalent size adhered to it, and then dicing tape Picked up from above. In this way, a semiconductor chip with a die bond film, that is, an adhesive layer, is obtained. The semiconductor chip provided with the die bond film is fixed by die bonding to an adherend such as a mounting substrate via the die bond film.

For example, the technique regarding the dicing die bond film used as mentioned above is described in the following patent documents 1 and 2, for example.

Japanese Patent Publication No. 2007-2173 Japanese Patent Publication No. 2010-177401

In the heat-shrink process as described above in the semiconductor device manufacturing process performed using a conventional dicing die-bonding film, the heating point (a peripheral region around the semiconductor wafer) in the dicing die-bonding film is sufficiently contracted. It may not be. In this case, in the dicing die-bonding film, the wafer bonding region inside the heating point is not sufficiently tensioned, so that a sufficient cuff width cannot be ensured between the semiconductor chips on the dicing die-bonding film. When a sufficient cuff width is not secured, a semiconductor chip provided with a die bond film may not be properly picked up from above the dicing tape. For example, when the semiconductor chip is picked up, the chip and the chip adjacent thereto In some cases, damage or the like due to contact between chips may occur.

The present invention has been devised on the basis of the above circumstances, the purpose of which is to achieve good splitting in an expanding process performed using a dicing die-bonding film to obtain a semiconductor chip with a die-bonding film. It is to provide a dicing die-bonding film suitable for securing a sufficient cuff width after the cut-off point of the liver.

The dicing die bond film provided by the present invention includes a dicing tape and a die bond film. The dicing tape has a laminated structure including a base material and an adhesive layer. This dicing tape is the elongation at break in the tensile test performed under the conditions of an initial chuck distance of 50 mm, -15°C, and a tensile speed of 300 mm/min for a 10 mm-wide dicing tape test piece (relative to the length before elongation). , Ratio of the length of the elongation at break) is 120% or more. The die bond film is adhered to the pressure-sensitive adhesive layer in the dicing tape so as to be peelable. This die bond film has a breaking elongation at a tensile test of 20 mm in width and a thickness of 210 µm in a tensile test performed under conditions of an initial interchuck distance of 20 mm, -15°C, and a tensile speed of 100 mm/min. % Or less. Further, the die bond film has a disc shape having a diameter D ₁ (mm), and includes a wafer bonding region (that is, a region to which a semiconductor wafer is bonded) having a disc shape and a concentric circle diameter D ₂ (mm), In addition, D ₁ and D ₂ satisfy D ₁ >D ₂ and (D ₁ -D ₂ )/D ₂ <0.1. The diameter D ₂ of the wafer bonding region in the die bond film is, for example, 200 to 300 mm. When this dicing die bond film is designed as an 8-inch wafer-compatible type, D ₂ is, for example, 200 mm±5 mm, preferably 200 mm±1 mm, more preferably 200 mm±0.5 mm. . When this dicing die bond film is designed as a 12 inch wafer-compatible type, D ₂ is, for example, 300 mm±5 mm, preferably 300 mm±1 mm, more preferably 300 mm±0.5 mm. . The dicing die-bonding film having such a structure can be used to obtain a semiconductor chip provided with a die-bonding film in the manufacturing process of a semiconductor device.

In the manufacturing process of the semiconductor device, as described above, in order to obtain a semiconductor chip provided with a die bond film, an expansion process for cutting using a dicing die bond film may be performed. In a die bond film constituting one component of a dicing die bond film, for a die bond film test piece having a width of 10 mm and a thickness of 210 µm, conditions of an initial interchuck distance of 20 mm, -15°C, and a tensile speed of 100 mm/min. The present inventors have found that the above-described configuration in which the elongation at break in the tensile test performed at 20% or less is suitable for generating a break at the intended location of the break for the die bond film in the expanding process for cutting. . For example, as shown in Examples and Comparative Examples described later. The above configuration that the elongation at break in the tensile test for the die-bonding film is 20% or less is applied to the die-bonding film while avoiding an excessive tensile length for cutting the die-bonding film in the expanding process for cutting. It is suitable for generating fracture due to ductile fracture or the like. From the viewpoint of ensuring good splitting properties in the expanding process for splitting with respect to the die bond film, the elongation at break in the tensile test for the die bond film is preferably 18% or less, more preferably 15% or less. .

As described above, the dicing tape of the dicing die-bonding film is subjected to a tensile test performed at a condition of an initial interchuck distance of 50 mm, -15°C, and a tensile speed of 300 mm/min for a 10 mm-wide dicing tape test piece. The elongation at break in the test is 120% or more. Such a structure is suitable for avoiding the dicing tape from being broken in an expanding process subject to a tensile action. For the dicing tape, in order to avoid breakage in the expanding process subject to a tensile action, the elongation at break of the dicing tape is preferably 150% or more, more preferably 200% or more, and more preferably It is 250% or more.

In the manufacturing process of the semiconductor device, as described above, in order to obtain a semiconductor chip provided with a die bond film, a heat shrink process may be performed after the expanding process for cutting. In the die bond film constituting one component of the dicing die bond film, the diameter D ₁ of the die bond film and the diameter D ₂ (<D ₁ ) of the wafer bonding region which is part of the die bond film are (D ₁ -D ₂ )/D ₂ <0.1, the above configuration is suitable for suppressing the die bond film from being excessive for a work-in semiconductor wafer in the in-plane direction to the radial direction of the dicing die bond film of a predetermined size, Therefore, it is suitable for securing a dicing tape area of a sufficient area not covered by the film around the die bond film. The dicing tape comprising a base material and an adhesive layer tends to have a larger shrinkage rate by heating than a die bond film. Therefore, in the dicing die-bonding film, the above-described configuration suitable for securing a dicing tape area of a sufficient area not covered by the film around the die-bonding film is a dicing die-bonding film in a heat shrink process. It is suitable for sufficiently shrinking the heat around the semiconductor wafer of, and thus, a sufficient tension is applied to the wafer bonding area inside the dicing die bond film to the inside of the heating point to secure a sufficient cuff width between the semiconductor chips on the film. Suitable. From the viewpoint of ensuring a sufficient cuff width between semiconductor chips on the dicing die bond film in the heat shrink process, the value of (D ₁ -D ₂ )/D ₂ is preferably 0.7 or less, more preferably 0.5 or less.

As described above, the dicing die-bonding film according to the present invention is suitable for securing sufficient cuff width thereafter with respect to the cutting position between chips while realizing good cutting in the expanding process for cutting.

In this dicing die-bonding film, the dicing tape is for a dicing tape test piece having a width of 10 mm extended to an inter-chuck distance of 120 mm under conditions of an initial inter-chuck distance of 100 mm, 23°C and a tensile speed of 1000 mm/min. The heat shrinkage rate in the heat treatment test performed under the conditions of a heating temperature of 100°C and a heating time of 10 seconds is preferably 0.1% or more, more preferably 0.2% or more, more preferably 0.5% or more, and more preferably 0.6%. Above, it is more preferably 0.7% or more, more preferably 1% or more, and still more preferably 1.5% or more. When the heat shrinkage ratio of the dicing tape or the substrate thereof in the so-called MD direction and the so-called TD direction is different, the heat shrinkage ratio of the dicing tape in the present invention corresponds to the average value of the heat shrinkage ratio in the MD direction and the heat shrinkage ratio in the TD direction Let mean the average heat shrinkage rate. Such a configuration is suitable for sufficiently heat-shrinking around the semiconductor wafer of the dicing die-bonding film in the heat-shrinking process, and therefore, sufficient tension is applied to the wafer bonding area inside the dicing die-bonding film than the corresponding heating point. It is suitable to ensure sufficient cuff width between semiconductor chips on the film by acting.

1 is a schematic cross-sectional view of a dicing die bond film according to an embodiment of the present invention.
FIG. 2 shows a part of steps in a semiconductor device manufacturing method in which the dicing die bond film shown in FIG. 1 is used.
3 shows a subsequent process of the process shown in FIG. 2.
4 shows a subsequent process of the process shown in FIG. 3.
5 shows a subsequent process of the process shown in FIG. 4.
6 shows a subsequent process of the process shown in FIG. 5.
FIG. 7 shows a subsequent process of the process shown in FIG. 6.
8 shows a part of steps in a modification of the semiconductor device manufacturing method in which the dicing die bond film shown in FIG. 1 is used.
9 shows a subsequent process of the process shown in FIG. 8.
10 shows a part of steps in a modification of the semiconductor device manufacturing method in which the dicing die bond film shown in FIG. 1 is used.
FIG. 11 shows a subsequent process of the process shown in FIG. 10.

1 is a schematic cross-sectional view of a dicing die bond film X according to an embodiment of the present invention. The dicing die bond film X has a laminated structure comprising a die bond film 10 and a dicing tape 20. The dicing tape 20 has a laminated structure comprising a base material 21 and an adhesive layer 22. The pressure-sensitive adhesive layer 22 has an adhesive surface 22a on the die bond film 10 side. The die bond film 10 is adhered so as to be peelable to the pressure-sensitive adhesive layer 22 of the dicing tape 20 to the pressure-sensitive adhesive surface 22a. The dicing die-bonding film X can be used in an expanding process such as, for example, later in the process of obtaining a semiconductor chip with a die-bonding film in the manufacture of a semiconductor device.

The die-bonding film 10 in the dicing die-bonding film X has a configuration that can function as an adhesive for die-bonding that exhibits thermosetting properties. The die-bonding film 10 may have a composition containing a thermosetting resin and a thermoplastic resin as a resin component, or a composition containing a thermoplastic resin accompanying a thermosetting functional group capable of reacting with a curing agent to cause bonding. When the die bond film 10 has a composition containing a thermoplastic resin carrying a thermosetting functional group, the die bond film 10 need not further include a thermosetting resin. The die bond film 10 may have a single-layer structure, or may have a multi-layer structure having different compositions between adjacent layers.

When the die-bonding film 10 has a composition containing a thermosetting resin and a thermoplastic resin, examples of the thermosetting resin include epoxy resin, phenol resin, amino resin, unsaturated polyester resin, polyurethane resin, silicone resin, and thermosetting And polyimide resins. The die bond film 10 may contain one type of thermosetting resin, or may contain two or more types of thermosetting resin. The epoxy resin is preferable as a thermosetting resin in the die-bonding film 10 in that the content of ionic impurities and the like, which may cause corrosion of the semiconductor chip to be die-bonded, tends to be small. Moreover, as a curing agent for expressing thermosetting property in an epoxy resin, a phenol resin is preferable.

Examples of the epoxy resin include bisphenol A, bisphenol F, bisphenol S, brominated bisphenol A, hydrogenated bisphenol A, bisphenol AF, biphenyl, naphthalene, fluorene, phenol novolac, Orthocresol novolac type, trishydroxyphenylmethane type, tetraphenylolethane type, hydantoin type, trisglycidyl isocyanurate type, and glycidylamine type epoxy resins. Phenol novolak type epoxy resin, orthocresol novolak type epoxy resin, biphenyl type epoxy resin, trishydroxyphenylmethane type epoxy resin, and tetraphenylolethane type epoxy resin are rich in reactivity with phenol resin as a curing agent. Moreover, it is preferable as an epoxy resin in the die bond film 10 from the point which is excellent in heat resistance.

Examples of the phenol resin that can act as a curing agent for the epoxy resin include polyoxystyrenes such as novolac type phenol resins, resol type phenol resins, and polyparaoxystyrenes. Examples of the novolak-type phenol resin include phenol novolak resin, phenol aralkyl resin, cresol novolak resin, tert-butylphenol novolak resin, and nonylphenol novolak resin. The die-bonding film 10 may contain one type of phenol resin or two or more types of phenol resin as a curing agent for the epoxy resin. Since phenol novolak resin and phenol aralkyl resin tend to improve the connection reliability of the adhesive when used as a curing agent for an epoxy resin as an adhesive for die bonding, it is preferable as a curing agent for an epoxy resin in the die bond film 10. Do.

When the die bond film 10 contains an epoxy resin and a phenol resin as a curing agent thereof, the hydroxyl group in the phenol resin is preferably 0.5 to 2.0 equivalents, and more preferably 0.8 to 1.2 equivalents to 1 equivalent of epoxy groups in the epoxy resin. In proportion, both resins are compounded. Such a structure is preferable in order to sufficiently advance the curing reaction of the epoxy resin and the phenol resin in curing the die bond film 10.

The content ratio of the thermosetting resin in the die-bonding film 10 is preferably 5 to 60% by mass, more preferably from the viewpoint of properly expressing the function as the thermosetting adhesive in the die-bonding film 10 Is 10 to 50% by mass.

The thermoplastic resin in the die bond film 10 serves, for example, as a binder function. Examples of the thermoplastic resin when the die bond film 10 has a composition including a thermosetting resin and a thermoplastic resin include acrylic resin, Natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin, 6-nylon Or polyamide resins such as 6,6-nylon, phenoxy resins, saturated polyester resins such as polyethylene terephthalate and polybutylene terephthalate, polyamideimide resins, and fluorine resins. The die bond film 10 may contain one type of thermoplastic resin, or may contain two or more types of thermoplastic resins. Acrylic resin is preferable as a thermoplastic resin in the die bond film 10 from the viewpoint of low ionic impurities and high heat resistance.

When the die-bonding film 10 contains an acrylic resin as a thermoplastic resin, the acrylic resin preferably contains the monomer units derived from the (meth)acrylic acid ester in the mass ratio. "(Meth)acrylic" shall mean "acrylic" and/or "methacryl".

Examples of the (meth)acrylic acid ester for forming the monomer unit of the acrylic resin, that is, the (meth)acrylic acid ester which is a constituent monomer of the acrylic resin, include (meth)acrylic acid alkyl ester, (meth)acrylic acid cycloalkyl ester, and (meth) )Acrylic acid aryl ester. As (meth)acrylic acid alkyl ester, for example, methyl ester of (meth)acrylic acid, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, iso Pentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester (ie lauryl ester), tridecyl ester, Tetradecyl ester, hexadecyl ester, octadecyl ester, and eicosyl ester. Examples of the (meth)acrylic acid cycloalkyl ester include (meth)acrylic acid cyclopentyl ester and cyclohexyl ester. Examples of the (meth)acrylic acid aryl ester include phenyl (meth)acrylate and benzyl (meth)acrylate. As the structural monomer of the acrylic resin, one (meth)acrylic acid ester may be used, or two or more (meth)acrylic acid esters may be used. Moreover, an acrylic resin can be obtained by superposing|polymerizing the raw material monomer for forming it. As a polymerization method, solution polymerization, emulsion polymerization, block polymerization, and suspension polymerization are mentioned, for example.

For the acrylic resin, for example, in order to modify the cohesive force or heat resistance, one or two or more other monomers copolymerizable with the (meth)acrylic acid ester may be used as the constituent monomers. Examples of such monomers include carboxyl group-containing monomers, acid anhydride monomers, hydroxy group-containing monomers, epoxy group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, acrylamide, and acrylonitrile. Examples of the carboxyl group-containing monomers include acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. As an acid anhydride monomer, maleic anhydride and itaconic anhydride are mentioned, for example. Examples of the hydroxy group-containing monomers include 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 6-hydroxyhexyl (meth)acrylate, and (meth) )8-hydroxyoctyl acrylic acid, 10-hydroxydecyl (meth)acrylic acid, 12-hydroxylauryl (meth)acrylic acid, and (meth)acrylic acid (4-hydroxymethylcyclohexyl)methyl. Examples of the epoxy group-containing monomer include (meth)acrylic acid glycidyl and (meth)acrylic acid methyl glycidyl. Examples of the sulfonic acid group-containing monomers include styrenesulfonic acid, allylsulfonic acid, 2-(meth)acrylamide-2-methylpropanesulfonic acid, (meth)acrylamidopropanesulfonic acid, and (meth)acryloyloxynaphthalenesulfonic acid. Can be. As a phosphate group containing monomer, 2-hydroxyethyl acryloyl phosphate is mentioned, for example.

From the viewpoint of realizing high cohesive force in the die bond film 10, the acrylic resin contained in the die bond film 10 is preferably a copolymer of butyl acrylate, ethyl acrylate, and acrylonitrile.

When the die bond film 10 has a composition containing a thermoplastic resin with a thermosetting functional group, as the thermoplastic resin, for example, a thermosetting functional group-containing acrylic resin can be used. The acrylic resin for forming the thermosetting functional group-containing acrylic resin preferably contains the most monomer units derived from (meth)acrylic acid esters in mass ratio. As such a (meth)acrylic acid ester, the (meth)acrylic acid ester similar to that described above can be used, for example, as a constituent monomer of the acrylic resin contained in the die bond film 10. On the other hand, examples of the thermosetting functional group for forming the thermosetting functional group-containing acrylic resin include a glycidyl group, a carboxyl group, a hydroxy group, and an isocyanate group. Among them, a glycidyl group and a carboxy group can be suitably used. That is, as the thermosetting functional group-containing acrylic resin, a glycidyl group-containing acrylic resin or a carboxyl group-containing acrylic resin can be suitably used. Further, depending on the type of the thermosetting functional group in the thermosetting functional group-containing acrylic resin, a curing agent capable of reacting with it is selected. When the thermosetting functional group of the thermosetting functional group-containing acrylic resin is a glycidyl group, as the curing agent, a phenol resin similar to that described above can be used as the curing agent for the epoxy resin.

In order to achieve a degree of crosslinking with respect to the die bond film 10 before being cured for die bonding, for example, by reacting with a functional group at the molecular chain end of the above-mentioned resin component included in the die bond film 10, etc. It is preferable to blend a polyfunctional compound capable of causing a bond into a resin composition for forming a die bond film as a crosslinking agent. Such a structure is preferable for improving the adhesive properties under the high temperature of the die bond film 10, and also for improving the heat resistance. As such a crosslinking agent, a polyisocyanate compound is mentioned, for example. Examples of the polyisocyanate compound include tolylene diisocyanate, diphenylmethane diisocyanate, p-phenylenediisocyanate, 1,5-naphthalene diisocyanate, and adducts of polyhydric alcohols and diisocyanates. The content of the crosslinking agent in the resin composition for forming a die bond film is preferable from the viewpoint of improving the cohesive force of the die bond film 10 to be formed, relative to 100 parts by mass of the resin having the functional group capable of reacting with the crosslinking agent to cause bonding. It is 0.05 parts by mass or more, and preferably 7 parts by mass or less from the viewpoint of improving the adhesion of the die bond film 10 to be formed. Moreover, as a crosslinking agent in the die bond film 10, you may use together other polyfunctional compounds, such as an epoxy resin, with a polyisocyanate compound.

The glass transition temperature of the acrylic resin and the thermosetting functional group-containing acrylic resin blended in the die bond film 10 is preferably -40 to 10°C. About the glass transition temperature of a polymer, the glass transition temperature (theoretical value) calculated|required based on the following formula of Fox can be used. The formula of Fox is the relationship between the glass transition temperature Tg of the polymer and the glass transition temperature Tgi of the homopolymer for each constituent monomer in the polymer. In the following formula of Fox, Tg represents the glass transition temperature (°C) of the polymer, Wi represents the weight fraction of monomer i constituting the polymer, and Tgi represents the glass transition temperature (°C) of the homopolymer of monomer i. Shows. Literature values can be used for the glass transition temperature of the homopolymer, for example, "Introduction to Synthetic Resins for New Polymer Paperwork 7 Paints" (Kitaoka Kyojo, Polymer Publications, 1995) or "Acrylic Ester Catalog (1997 Edition) )” (Mitsubishi Rayon Co., Ltd.) shows the glass transition temperature of various homopolymers. On the other hand, the homopolymer glass transition temperature of the monomer can also be determined by the method specifically described in Japanese Patent Laid-Open No. 2007-51271.

Fox's Expression 1/(273+Tg)=Σ[Wi/(273+Tgi)]

The die bond film 10 may contain a filler. The blending of the filler with the die-bonding film 10 is preferable in adjusting physical properties such as the elastic modulus of the die-bonding film 10, yield strength, and elongation at break. Examples of the filler include inorganic fillers and organic fillers. The filler may have various shapes such as a spherical shape, a needle shape, and a flake shape. In addition, the die bond film 10 may contain one type of filler, or may contain two or more types of fillers.

As a constituent material of the inorganic filler, for example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica , And amorphous silica. As a structural material of an inorganic filler, simple metals, such as aluminum, gold, silver, copper, and nickel, alloys, amorphous carbon, graphite, etc. are mentioned. When the die-bonding film 10 contains an inorganic filler, the content of the inorganic filler is preferably 10% by mass or more, more preferably 20% by mass or more, and more preferably 30% by mass or more. Moreover, the said content is preferably 50 mass% or less, More preferably, it is 45 mass% or less, More preferably, it is 40 mass% or less.

Examples of the constituent material of the organic filler include polymethyl methacrylate (PMMA), polyimide, polyamideimide, polyetheretherketone, polyetherimide, and polyesterimide. When the die bond film 10 contains an organic filler, the content of the organic filler is preferably 2% by mass or more, more preferably 5% by mass or more, and more preferably 8% by mass or more. Moreover, the said content is preferably 20 mass% or less, More preferably, it is 17 mass% or less, More preferably, it is 15 mass% or less.

When the die bond film 10 contains a filler, the average particle diameter of the filler is preferably 0.005 to 10 μm, and more preferably 0.05 to 1 μm. The structure in which the average particle diameter of the filler is 0.005 µm or more is suitable for realizing high wettability and adhesion to an adherend such as a semiconductor wafer in the die bond film 10. The structure in which the average particle diameter of the filler is 10 µm or less is suitable for obtaining sufficient filler addition effect in the die bond film 10 and ensuring heat resistance. The average particle size of the filler can be obtained, for example, using a light-intensity particle size distribution system (trade name "LA-910", manufactured by Horiba Seisakusho Co., Ltd.).

The die bond film 10 may contain a thermosetting catalyst. The blending of the heat-curing catalyst with the die-bonding film 10 is preferable for sufficiently curing the resin component during curing of the die-bonding film 10 or increasing the curing reaction rate. Examples of such a thermosetting catalyst include an imidazole compound, a triphenylphosphine compound, an amine compound and a trihalogen borane compound. Examples of the imidazole-based compound include 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, and 2-ethyl-4-methylimidazole Sol, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2- Methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6-[2'-methyl Midazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-undecylimidazolyl-(1')]-ethyl-s-triazine, 2, 4-diamino-6-[2'-ethyl-4'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-methylimida Jolyl-(1')]-ethyl-s-triazineisocyanuric acid adduct, 2-phenyl-4, 5-dihydroxymethylimidazole, and 2-phenyl-4-methyl-5-hydroxymethyl And imidazole. Examples of the triphenylphosphine-based compound include triphenylphosphine, tributylphosphine, tri(p-methylphenyl)phosphine, tri(nonylphenyl)phosphine, diphenyltolylphosphine, tetraphenylphosphonium bromide, methyl Triphenylphosphonium, methyltriphenylphosphonium chloride, methoxymethyltriphenylphosphonium chloride, and benzyltriphenylphosphonium chloride. The triphenylphosphine-based compound is also intended to include compounds that use a triphenylphosphine structure and a triphenylborane structure together. Examples of such a compound include tetraphenylphosphoniumtetraphenylborate, tetraphenylphosphoniumtetra-p-triborate, benzyltriphenylphosphoniumtetraphenylborate, and triphenylphosphinetriphenylborane. Examples of the amine-based compound include monoethanolamine trifluoroborate and dicyandiamide. As a trihalogen borane type compound, trichloroborane is mentioned, for example. The die bond film 10 may contain one type of thermosetting catalyst or may contain two or more types of thermosetting catalyst.

The die bond film 10 may contain one type or two or more types of other components as necessary. As said other component, a flame retardant, a silane coupling agent, and an ion trap agent are mentioned, for example. Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resins. Examples of the silane coupling agent include β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxypropylmethyldiethoxysilane. have. As the ion trap agent, for example, hydrotalcite, bismuth hydroxide, hydrous antimony oxide (for example, "IXE-300" manufactured by Toa Kose Co., Ltd.), zirconium phosphate of a specific structure (for example, Toa Kose Co., Ltd.) ``IXE-100'' manufactured by Kaisha, magnesium silicate (e.g. ``Kyowad 600'' manufactured by Kyowa Kagaku High School) and aluminum silicate (e.g. manufactured by Kyowa Kagaku High School) Kyowa 700」). Compounds capable of forming complexes between metal ions can also be used as ion trap agents. As such a compound, a triazole type compound, a tetrazol type compound, and a bipyridyl type compound are mentioned, for example. Among these, a triazole-based compound is preferred from the viewpoint of stability of the complex formed between metal ions. Examples of such triazole-based compounds are 1,2,3-benzotriazole, 1-{N,N-bis(2-ethylhexyl)aminomethyl}benzotriazole, carboxybenzotriazole, 2-(2- Hydroxy-5-methylphenyl)benzotriazole, 2-(2-hydroxy-3,5-di-t-butylphenyl)-5-chlorobenzotriazole, 2-(2-hydroxy-3-t- Butyl-5-methylphenyl)-5-chlorobenzotriazole, 2-(2-hydroxy-3,5-di-t-amylphenyl)benzotriazole, 2-(2-hydroxy-5-t-octyl Phenyl)benzotriazole, 6-(2-benzotriazolyl)-4-t-octyl-6'-t-butyl-4'-methyl-2,2'-methylenebisphenol, 1-(2,3-di Hydroxypropyl)benzotriazole, 1-(1,2-dicarboxydiethyl)benzotriazole, 1-(2-ethylhexyl aminomethyl)benzotriazole, 2,4-di-t-pentyl-6- {(H-benzotriazol-1-yl)methyl}phenol, 2-(2-hydroxy-5-t-butylphenyl)-2H-benzotriazole, octyl-3-[3-t-butyl-4 -Hydroxy-5-(5-chloro-2H-benzotriazol-2-yl)phenyl]propionate, 2-ethylhexyl-3-[3-t-butyl-4-hydroxy-5-(5 -Chloro-2H-benzotriazol-2-yl)phenyl]propionate, 2-(2H-benzotriazol-2-yl)-6-(1-methyl-1-phenylethyl)-4-(1 ,1,3,3-tetramethylbutyl)phenol, 2-(2H-benzotriazol-2-yl)-4-t-butylphenol, 2-(2-hydroxy-5-methylphenyl)benzotriazole, 2-(2-hydroxy-5-t-octylphenyl)-benzotriazole, 2-(3-t-butyl-2-hydroxy-5-methylphenyl)-5-chlorobenzotriazole, 2-(2 -Hydroxy-3,5-di-t-amylphenyl)benzotriazole, 2-(2-hydroxy-3,5-di-t-butylphenyl)-5-chloro-benzotriazole, 2-[ 2-hydroxy-3,5-di(1,1-dimethylbenzyl)phenyl]-2H-benzotriazole, 2,2'-methylenebis[6-(2H-benzotriazol-2-yl)-4 -(1,1,3,3-tetramethylbutyl)phenol], (2-[2-hydroxy-3,5-bis(α,α-dimethylbenzyl)phenyl]-2H-benzotriazole, and methyl And -3-[3-(2H-benzotriazol-2-yl)-5-t-butyl-4-hydroxyphenyl]propionate. In addition, a quinol compound or hydroxy Certain hydroxyl group-containing compounds such as anthraquinone compounds and polyphenol compounds can also be used as ion trapping agents. Specific examples of the hydroxyl group-containing compound include 1,2-benzenediol, alizarin, anthrupine, tannin, gallic acid, methyl gallate, and pyrogallol.

The thickness of the die bond film 10 is preferably 3 µm or more, more preferably 7 µm or more, and more preferably 10 µm or more. In addition, the thickness of the die bond film 10 is preferably 150 µm or less, more preferably 140 µm or less, and more preferably 135 µm or less.

The die bond film 10 has a disk shape having a diameter of D ₁ (mm). At the same time, the die-bonding film 10 includes a wafer bonding region 10A having a disk shape and a concentric circle diameter D ₂ (mm). The diameter D ₂ of the wafer bonding region 10A is, for example, in the range of 200 to 300 mm. Specifically, when the dicing die bond film X is designed as an 8-inch wafer-compatible type, D ₂ is, for example, 200 mm±5 mm, preferably 200 mm±1 mm, more preferably 200 mm It is ±0.5 mm. When the dicing die bond film X is designed as a 12-inch wafer counterpart, D ₂ is, for example, 300 mm±5 mm, preferably 300 mm±1 mm, more preferably 300 mm±0.5 mm. .

In the dicing die-bonding film X, the diameter D ₂ of the die-bonding film 10, the diameter D ₁ and the wafer bonding region (10A) is a, D _1> D _2, and _{(D 1 -D 2) / D} 2 <0.1 Meets. The value of (D ₁ -D ₂ )/D ₂ is preferably 0.7 or less, and more preferably 0.5 or less. These structures are suitable for securing a dicing tape area of a sufficient area not covered by the film around the die bond film 10 in the dicing die bond film X.

The die bond film 10 is the elongation at break in a tensile test performed under conditions of an initial interchuck distance of 20 mm, -15°C, and a tensile speed of 100 mm/min for a die bond film test piece having a width of 10 mm and a thickness of 210 µm. The ratio of the length of the elongated portion at break to the length before elongation is 20% or less, preferably 18% or less, and more preferably 15% or less. About the elongation at break, it can be measured using a tensile tester (trade name "Autograph AG-X", manufactured by Shimadzu Corporation). In addition, the adjustment of the elongation at break in the die bond film 10 is to control the amount of the inorganic filler and/or the organic filler in the die bond film 10, and the above-described acrylic resin in the die bond film 10. It can be performed by controlling the glass transition temperature.

The viscosity at 120°C in the uncured state of the die bond film 10 is preferably 300 Pa·s or more, more preferably 700 Pa·s or more, and even more preferably 1000 Pa·s or more. In addition, the viscosity at 120°C in the uncured state of the die bond film 10 is preferably 5000 Pa·s or less, more preferably 4500 Pa·s or less, and more preferably 4000 Pa·s or less.

The die-bonding film 10 as described above is, for example, in the peeling test under conditions of a temperature of 23° C., a peeling angle of 180°, and a tensile speed of 300 mm/min. It shows 180° peel adhesion. Such a structure is suitable for securing the holding|maintenance of the work by the dicing die bond film X-the die bond film 10.

The base material 21 of the dicing tape 20 in the dicing die bond film X is an element that functions as a support in the dicing tape 20 to the dicing die bond film X. The base material 21 is, for example, a plastic base material, and a plastic film can be suitably used as the plastic base material. As a plastic base material, polyolefin, polyester, polyurethane, polycarbonate, polyether ether ketone, polyimide, polyetherimide, polyamide, wholly aromatic polyamide, polyvinyl chloride, polyvinyl chloride And lithium, polyphenyl sulfide, aramid, fluorine resin, cellulose resin, and silicone resin. As the polyolefin, for example, low density polyethylene, straight chain low density polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymerized polypropylene, block copolymerized polypropylene, homo polyprolene, polybutene, polymethylpentene, ethylene-acetic acid Vinyl copolymers, ionomer resins, ethylene-(meth)acrylic acid copolymers, ethylene-(meth)acrylic acid ester copolymers, ethylene-butene copolymers, and ethylene-hexene copolymers. As polyester, polyethylene terephthalate, polyethylene naphthalate, and polybutylene terephthalate are mentioned, for example. The base material 21 may be made of one type of material or two or more types of materials. The base material 21 may have a single-layer structure or a multi-layer structure. When the pressure-sensitive adhesive layer 22 on the base material 21 is UV-curable as described later, the base material 21 preferably has UV transmission properties. In addition, when the base material 21 is formed of a plastic film, a non-stretched film may be used, a uniaxially stretched film may be used, or a biaxially stretched film may be used.

It is preferable that the base material 21 has heat shrinkability. In addition, when the base material 21 is made of a plastic film, the base material 21 is preferably a biaxially stretched film in order to realize isotropic heat-shrinkability with respect to the dicing tapes 20 to 21. The dicing tape 20 to the base material 21 preferably have a heat shrinkage rate by a heat treatment test performed under conditions of a heating temperature of 100° C. and a heat treatment time of 60 seconds, preferably 2 to 30%, more preferably 2 to 25. %, more preferably 3 to 20%, more preferably 5 to 20%. The said thermal contraction rate with respect to the base material 21 shall mean the thermal contraction rate of at least one of the so-called thermal contraction rate in MD direction and the so-called thermal contraction rate in TD direction.

The surface of the pressure-sensitive adhesive layer 22 side of the base material 21 may be subjected to physical treatment, chemical treatment, or primer treatment to increase adhesion to the pressure-sensitive adhesive layer 22. Examples of the physical treatment include corona treatment, plasma treatment, sand matting treatment, ozone exposure treatment, flame exposure treatment, high pressure electric shock exposure treatment, and ionizing radiation treatment. As a chemical treatment, a chromic acid treatment is mentioned, for example.

The thickness of the base material 21 is preferably 40 μm or more, preferably from the viewpoint of securing the strength for the base material 21 to function as a support for the dicing tape 20 to the dicing die bond film X. Is 50 µm or more, more preferably 55 µm or more, and more preferably 60 µm or more. In addition, from the viewpoint of achieving appropriate flexibility in the dicing tape 20 to the dicing die bond film X, the thickness of the substrate 21 is preferably 200 μm or less, more preferably 180 μm or less, and more It is preferably 150 µm or less.

The pressure-sensitive adhesive layer 22 of the dicing tape 20 contains an adhesive. This pressure-sensitive adhesive may be a pressure-sensitive adhesive (adhesive force-reducible type pressure-sensitive adhesive) capable of intentionally reducing the adhesive force by an action from the outside in the process of using the dicing die-bonding film X, or in the process of using the dicing die-bonding film X. Therefore, depending on the action from the outside, the adhesive may be a pressure-sensitive adhesive (adhesive non-reducing adhesive) with little or no reduction. As to the adhesive in the adhesive layer 22, whether to use a pressure-sensitive adhesive capable of reducing adhesive strength or a non-adhesive adhesive, use a dicing die-bonding film X to separate the semiconductor chip, which is divided into methods, conditions, etc. Depending on the aspect of use of the single die bond film X, it can be appropriately selected.

When a pressure-sensitive adhesive capable of reducing adhesive strength is used as the pressure-sensitive adhesive in the pressure-sensitive adhesive layer 22, in the process of using the dicing die bond film X, the pressure-sensitive adhesive layer 22 shows a relatively high pressure-sensitive adhesive state and a relatively low pressure-sensitive adhesive force. It is possible to use states separately. For example, when the dicing die bond film X is used in the expand process described later, the pressure of the adhesive layer 22 is suppressed to prevent or prevent lifting or peeling of the die bond film 10 from the adhesive layer 22. On the other hand, in the pick-up process described later for picking up the semiconductor chip provided with the die-bonding film from the dicing tape 20 of the dicing die-bonding film X, while using the adhesive state, the die-bonding film from the pressure-sensitive adhesive layer 22 In order to make it easy to pick up a semiconductor chip having a, it is possible to use the low adhesive force state of the pressure-sensitive adhesive layer 22.

Examples of the pressure-sensitive adhesive capable of reducing adhesive strength include, for example, adhesives (radiation-curable adhesives) that can be cured by irradiation in the course of using the dicing die-bonding film X, heat-expandable adhesives, and the like. In the pressure-sensitive adhesive layer 22 of the present embodiment, one type of pressure-sensitive adhesive capable of reducing adhesive strength may be used, or two or more types of pressure-sensitive adhesive capable of reducing adhesive strength may be used. Further, the entire pressure-sensitive adhesive layer 22 may be formed of a pressure-sensitive adhesive-type pressure-sensitive adhesive, or a part of the pressure-sensitive adhesive layer 22 may be formed of a pressure-sensitive adhesive-type pressure-sensitive adhesive. For example, when the pressure-sensitive adhesive layer 22 has a single-layer structure, the entire pressure-sensitive adhesive layer 22 may be formed of a pressure-sensitive adhesive-type pressure-sensitive adhesive, or a predetermined portion of the pressure-sensitive adhesive layer 22 (for example, The area to be adhered to the work area is formed of a pressure-sensitive adhesive, and other parts (for example, areas to be adhered to the ring frame, areas outside the center area) are formed of non-adhesive adhesives. You may work. In addition, when the pressure-sensitive adhesive layer 22 has a multi-layer structure, all the layers constituting the multi-layer structure may be formed of a pressure-sensitive adhesive capable of being reduced, or some of the layers in the multi-layer structure may be formed of a pressure-sensitive adhesive capable of reducing a pressure-sensitive adhesive.

Examples of the radiation curable pressure-sensitive adhesive for the pressure-sensitive adhesive layer 22 include an adhesive that is cured by irradiation with electron beams, ultraviolet rays, α-rays, β-rays, γ-rays, or X-rays, and is cured by irradiation with ultraviolet rays. A type of adhesive (ultraviolet curable adhesive) can be used particularly suitably.

The radiation curable pressure-sensitive adhesive for the pressure-sensitive adhesive layer 22 contains, for example, a base polymer such as an acrylic polymer that is an acrylic pressure-sensitive adhesive, and a radiation-polymerizable monomer component or oligomer component having a functional group such as a radiation-polymerizable carbon-carbon double bond. And an additive-type radiation curable pressure sensitive adhesive.

The acrylic polymer preferably contains the most monomer units derived from (meth)acrylic acid esters in mass ratio. Examples of the (meth)acrylic acid ester for forming the monomer unit of the acrylic polymer, that is, the (meth)acrylic acid ester which is a constituent monomer of the acrylic polymer, include (meth)acrylic acid alkyl ester, (meth)acrylic acid cycloalkyl ester, and (meth) )Acrylic acid aryl ester, and more specifically, (meth)acrylic acid ester similar to that described above with respect to the acrylic resin for the die bond film 10. As the structural monomer of the acrylic polymer, one (meth)acrylic acid ester may be used, or two or more (meth)acrylic acid esters may be used. As a structural monomer of an acrylic polymer, 2-ethylhexyl acrylate and lauryl acrylate are mentioned preferably. In addition, in order to properly express basic properties such as tackiness by (meth)acrylic acid esters in the pressure-sensitive adhesive layer 22, the proportion of (meth)acrylic acid esters in all the constituent monomers of the acrylic polymer is preferably 40 mass. % Or more, more preferably 60% by mass or more.

The acrylic polymer may contain, for example, one or two or more other monomers copolymerizable with the (meth)acrylic acid ester in the constituent monomers in order to modify the cohesive force or heat resistance. Examples of such a monomer include a carboxyl group-containing monomer, an acid anhydride monomer, a hydroxyl group-containing monomer, an epoxy group-containing monomer, a sulfonic acid group-containing monomer, a phosphoric acid group-containing monomer, acrylamide, and acrylonitrile, and more specifically, die The copolymerizable monomer similar to the above is mentioned about the acrylic resin for the bond film 10.

The acrylic polymer may contain a monomer unit derived from a polyfunctional monomer copolymerizable with a monomer component such as (meth)acrylic acid ester to form a crosslinked structure in the polymer skeleton. As such a polyfunctional monomer, for example, hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, neopentyl glycol di(meth)acrylic Rate, pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate, polyglycidyl (meth) Acrylate, polyester (meth)acrylate, and urethane (meth)acrylate. "(Meth)acrylate" shall mean "acrylate" and/or "methacrylate". As the constituent monomer of the acrylic polymer, one type of polyfunctional monomer may be used, or two or more types of polyfunctional monomers may be used. In order to properly express basic properties such as tackiness by (meth)acrylic acid esters in the pressure-sensitive adhesive layer 22, the proportion of the polyfunctional monomers in the entire constituent monomers of the acrylic polymer is preferably 40% by mass or less, preferably It is 30 mass% or less.

The acrylic polymer can be obtained by polymerizing a raw material monomer for forming it. As a polymerization method, solution polymerization, emulsion polymerization, block polymerization, and suspension polymerization are mentioned, for example. From the viewpoint of high cleanliness in the semiconductor device manufacturing method in which the dicing tape 20 to the dicing die bond film X are used, the pressure-sensitive adhesive layer 22 in the dicing tape 20 to the dicing die bond film X Since the low molecular weight substance in) is preferably less, the number average molecular weight of the acrylic polymer is preferably 100,000 or more, more preferably 200,000 to 3,000,000.

The pressure-sensitive adhesive layer 22 to the pressure-sensitive adhesive for forming it may contain, for example, an external crosslinking agent in order to increase the number average molecular weight of the base polymer such as acrylic polymer. Examples of the external crosslinking agent for forming a crosslinked structure by reacting with a base polymer such as an acrylic polymer include polyisocyanate compounds, epoxy compounds, polyol compounds, aziridine compounds, and melamine-based crosslinking agents. The content of the external crosslinking agent in the pressure-sensitive adhesive layer 22 to the pressure-sensitive adhesive for forming it is preferably 5 parts by mass or less, more preferably 0.1 to 5 parts by mass, relative to 100 parts by mass of the base polymer.

Examples of the radiation polymerizable monomer component for forming a radiation curable pressure-sensitive adhesive include urethane (meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, and pentaerythritol tetra(meth) )Acrylate, dipentaerythritol monohydroxypenta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, and 1,4-butanediol di(meth)acrylate. Examples of the radiation polymerizable oligomer component for forming the radiation curable pressure-sensitive adhesive include, for example, various oligomers such as urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based, and having a molecular weight of about 100 to 30000. It's suitable. The total content of the radiation-curable monomer component or oligomer component in the radiation-curable pressure-sensitive adhesive is determined within a range capable of adequately lowering the adhesive force of the pressure-sensitive adhesive layer 22 to be formed, and based on 100 parts by mass of a base polymer such as an acrylic polymer, It is preferably 5 to 500 parts by mass, and more preferably 40 to 150 parts by mass. Moreover, as an addition type radiation curable adhesive, you may use what was disclosed, for example in Unexamined-Japanese-Patent No. 60-196956.

As the radiation-curable pressure-sensitive adhesive for the pressure-sensitive adhesive layer 22, for example, an intrinsic radiation-curable pressure-sensitive adhesive containing a base polymer having a functional group such as a radiation-polymerizable carbon-carbon double bond at a polymer side chain or a polymer main chain at the polymer main chain end. It can also be mentioned. Such an intrinsic radiation curable pressure sensitive adhesive is suitable for suppressing unintentional changes over time of the adhesion properties due to the movement of low molecular weight components in the pressure sensitive adhesive layer 22 to be formed.

As the base polymer contained in the intrinsic radiation-curable pressure-sensitive adhesive, it is preferable to use an acrylic polymer as a basic skeleton. As the acrylic polymer constituting such a basic skeleton, the above-described acrylic polymer can be employed. As a method for introducing a radiation-polymerizable carbon-carbon double bond to an acrylic polymer, for example, a raw material monomer containing a monomer having a predetermined functional group (first functional group) is copolymerized to obtain an acrylic polymer, and thereafter, between the first functional groups. A condensation reaction or addition of a compound having a predetermined functional group (second functional group) capable of causing a reaction and a radiation-polymerizable carbon-carbon double bond, while maintaining the radiation polymerization property of a carbon-carbon double bond to an acrylic polymer And a method of reacting.

Examples of the combination of the first functional group and the second functional group include a carboxy group and an epoxy group, an epoxy group and a carboxy group, a carboxy group and an aziridyl group, an aziridyl group and a carboxy group, a hydroxy group and an isocyanate group, an isocyanate group and a hydroxy group. Among these combinations, a combination of a hydroxy group and an isocyanate group or a combination of an isocyanate group and a hydroxy group is preferable from the viewpoint of ease of reaction tracking. In addition, since producing a polymer having a highly reactive isocyanate group has a high technical difficulty, from the viewpoint of ease of production or acquisition of an acrylic polymer, the first functional group on the acrylic polymer side is a hydroxy group, and the second functional group is an isocyanate group. The case is more preferable. In this case, as an isocyanate compound that uses a radiation-polymerizable carbon-carbon double bond and an isocyanate group as a second functional group, that is, a radiation-polymerizable unsaturated functional group-containing isocyanate compound, for example, methacryloyl isocyanate, 2-methacryloyl And oxyethyl isocyanate (MOI) and m-isopropenyl-α,α-dimethylbenzyl isocyanate.

The radiation curable pressure-sensitive adhesive for the pressure-sensitive adhesive layer 22 preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include α-ketol compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, and thioxanthone compounds Compounds, camphorquinones, halogenated ketones, acylphosphine oxides and acylphosphonates. Examples of the α-ketol-based compound include 4-(2-hydroxyethoxy)phenyl(2-hydroxy-2-propyl)ketone, α-hydroxy-α,α'-dimethylacetophenone, and 2-methyl -2-hydroxy propiophenone, and 1-hydroxycyclohexylphenylketone. As the acetophenone-based compound, for example, methoxyacetophenone, 2,2-dimethoxy-1,2-diphenylethan-1-one, 2,2-diethoxyacetophenone and 2-methyl-1-[4 -(Methylthio)-phenyl]-2-morpholinopropane-1. Examples of the benzoin ether-based compound include benzoin ethyl ether, benzoin isopropyl ether, and anisoin methyl ether. As a ketal type compound, benzyl dimethyl ketal is mentioned, for example. As an aromatic sulfonyl chloride type compound, 2-naphthalene sulfonyl chloride is mentioned, for example. Examples of the photoactive oxime-based compound include 1-phenyl-1,2-propanedione-2-(O-ethoxycarbonyl)oxime. Examples of the benzophenone-based compound include benzophenone, benzoylbenzoic acid and 3,3'-dimethyl-4-methoxybenzophenone. As the thioxanthone-based compound, for example, thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothiochine Acid tones, 2,4-diethylthioxanthone, and 2,4-diisopropylthioxanthone. The content of the photopolymerization initiator in the radiation curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 22 is, for example, 0.05 to 20 parts by mass with respect to 100 parts by mass of the base polymer such as acrylic polymer.

The heat-foaming pressure-sensitive adhesive for the pressure-sensitive adhesive layer 22 is an pressure-sensitive adhesive containing a component that foams or expands by heating (such as a foaming agent or a thermally expandable microsphere). Examples of the blowing agent include various inorganic blowing agents and organic blowing agents. As the thermally expandable microsphere, for example, a microsphere having a structure in which a substance that easily gasifies and expands by heating is enclosed in a shell. Examples of the inorganic foaming agent include ammonium carbonate, ammonium hydrogen carbonate, sodium hydrogen carbonate, ammonium nitrite, sodium borohydride, and azides. Examples of the organic foaming agent include alkane fluorinated alkanes such as trichloromonofluoromethane and dichloromonofluoromethane, azo compounds such as azobisisobutyronitrile, azodicarbonamide, and barium azodicarboxylate, para Hydrazine-based compounds such as toluene sulfonyl hydrazide, diphenyl sulfone-3, 3'-disulfonyl hydrazide, 4,4'-oxybis (benzenesulfonyl hydrazide), and allyl bis (sulfonyl hydrazide), ρ Semicarbazide-based compounds such as toluylene sulfonyl semicarbazide and 4,4'-oxybis (benzenesulfonyl semicarbazide), 5-morpholinyl-1,2,3,4-thiatriazole And triazole-based compounds such as N,N'-dinitrosopentamethylenetetramine and N,N'-dimethyl-N,N'-dinitrosoterephthalamide. Examples of the substance for easily gasifying and expanding by heating to form the thermally expandable microspheres include, for example, isobutane, propane and pentane. A thermally expandable microsphere can be produced by encapsulating a substance that easily gasifies and expands by heating into a shell-forming substance by a coacervation method, an interfacial polymerization method, or the like. As the shell-forming material, a material exhibiting heat-meltability or a material that can be ruptured by the thermal expansion action of the encapsulating material can be used. Examples of such a material include vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, and polysulfone.

Examples of the above-mentioned adhesive non-reducing pressure-sensitive adhesive include a pressure-sensitive adhesive or a pressure-sensitive adhesive in which the above-mentioned radiation curable pressure-sensitive adhesive is cured by irradiation with radiation in advance. The radiation-curable pressure-sensitive adhesive may exhibit adhesiveness attributable to the polymer component even when radiation-cured adhesive strength is reduced, depending on the type and content of the polymer component contained therein. It is possible to exert the adhesive force available for use. In the pressure-sensitive adhesive layer 22 of the present embodiment, one type of pressure-sensitive adhesive may be used, or two or more types of pressure-sensitive adhesives may be used. Further, the entire pressure-sensitive adhesive layer 22 may be formed of an adhesive non-reducing type adhesive, or a portion of the adhesive layer 22 may be formed of an adhesive non-reducing type adhesive. For example, when the pressure-sensitive adhesive layer 22 has a single-layer structure, the entire pressure-sensitive adhesive layer 22 may be formed of a non-tack-sensitive adhesive, and as described above, a predetermined portion of the pressure-sensitive adhesive layer 22 (For example, the area to be adhered to the ring frame, and the area outside the area to be adhered to the wafer) is formed of an adhesive non-reducing pressure sensitive adhesive, and other parts (for example, a central area that is the area to be adhered to the wafer) It may be formed of a pressure-sensitive adhesive capable of reducing the adhesive force. In addition, when the pressure-sensitive adhesive layer 22 has a multi-layer structure, all the layers constituting the multi-layer structure may be formed of an adhesive non-reducing adhesive, or some of the layers in the multilayer structure may be formed of an adhesive non-reducing adhesive.

On the other hand, as the pressure-sensitive adhesive for the pressure-sensitive adhesive layer 22, for example, an acrylic pressure-sensitive adhesive or a rubber-based pressure-sensitive adhesive using an acrylic polymer as a base polymer can be used. When the pressure-sensitive adhesive layer 22 contains an acrylic pressure-sensitive adhesive as a pressure-sensitive adhesive, the acrylic polymer, which is the base polymer of the acrylic pressure-sensitive adhesive, preferably contains the most monomer units derived from (meth)acrylic acid esters in mass ratio. As such an acrylic polymer, the acrylic polymer mentioned above regarding a radiation curable adhesive is mentioned, for example.

The pressure-sensitive adhesive layer 22 to the pressure-sensitive adhesive for achieving it may contain, in addition to the above-mentioned components, a crosslinking accelerator, a tackifier, an anti-aging agent, and coloring agents such as pigments and dyes. The colorant may be a compound that is colored by irradiation with radiation. As such a compound, a leuco dye is mentioned, for example.

The thickness of the pressure-sensitive adhesive layer 22 is preferably 1 to 50 μm, more preferably 2 to 30 μm, and more preferably 5 to 25 μm. Such a configuration, for example, when the pressure-sensitive adhesive layer 22 contains a radiation-curable pressure-sensitive adhesive, to balance the adhesion to the die bond film 10 before and after radiation curing of the pressure-sensitive adhesive layer 22 It is suitable.

The dicing tape 20 has a disk shape of the above-described die bond film 10 and a disk shape having a concentric circle diameter D ₃ . When the dicing die bond film X is designed as an 8-inch wafer counterpart, the diameter D ₃ of the dicing tape 20 is, for example, 255 to 280 mm, and the dicing die bond film X is a 12-inch wafer counterpart. When designed, the diameter D ₃ of the dicing tape 20 is, for example, from 360 to 380 mm.

The dicing tape 20 is heated at a heating temperature of 100° C. for a dicing tape test piece having a width of 10 mm extended to a distance between the chucks of 120 mm at an initial chuck distance of 100 mm, 23° C., and a tensile speed of 1000 mm/min. The heat shrinkage rate in the heat treatment test performed under the condition of time 10 seconds is preferably 0.1% or more, more preferably 0.2% or more, more preferably 0.5% or more, more preferably 0.6% or more, and more preferably It is 0.7% or more, more preferably 1% or more, and still more preferably 1.5% or more. For elongation of the dicing tape test piece, for example, a tensile tester (trade name "Autograph AG-X", manufactured by Shimadzu Corporation) can be used. The heat shrinkage rate can be adjusted by adjusting the abundance ratio of the resin having a high heat shrinkage rate in the material constituting the base material 21 of the dicing tape 20. For example, in the single-layer structure base material 21, the heat shrinkage ratio of the dicing tape 20 can be increased by increasing the blending ratio of the resin having a high heat shrinkage ratio in the base material. In the multilayer structure substrate 21, the heat shrinkage rate of the dicing tape 20 can be increased by including a layer made of a resin having a high thermal contraction rate in the multilayer structure of the substrate 21.

The dicing tape 20 is the elongation at break in a tensile test performed under the conditions of an initial interchuck distance of 50 mm, -15°C, and a tensile speed of 300 mm/min for a 10 mm wide dicing tape 20 test piece. It is 120% or more, preferably 150% or more, more preferably 200% or more, and more preferably 250% or more. About the elongation at break, it can be measured using a tensile tester (trade name "Autograph AG-X", manufactured by Shimadzu Corporation). In addition, adjustment of the elongation at break in the dicing tape 20 can be performed by adjusting the abundance ratio of the easily stretchable resin in the material constituting the base material 21 of the dicing tape 20. Do. For example, in the single-layer structure base material 21, the elongation at break of the dicing tape 20 can be increased by increasing the blending ratio of the easily stretchable resin base material. In the multi-layered substrate 21, the elongation at break of the dicing tape 20 can be increased by including a layer made of an easily stretchable resin in the multi-layered structure of the substrate 21.

The dicing die bond film X having the above structure can be produced, for example, as follows.

In the production of the die-bonding film 10 of the dicing die-bonding film X, first, an adhesive composition for forming the die-bonding film 10 is prepared, and then the composition is applied onto a predetermined separator to form an adhesive composition layer. Examples of the separator include a polyethylene terephthalate (PET) film, a polyethylene film, a polypropylene film, and plastic films or papers surface-coated with a release agent such as a fluorine-based release agent or a long-chain alkylacrylate-based release agent. As a coating method of an adhesive composition, roll coating construction, screen coating construction, and gravure coating construction are mentioned, for example. Next, in this adhesive composition layer, by heating, it is dried as needed, and a crosslinking reaction is generated as necessary. The heating temperature is, for example, 70 to 160°C, and the heating time is, for example, 1 to 5 minutes. As described above, the die bond film 10 described above can be produced in a form involving a separator.

About the dicing tape 20 of the dicing die bond film X, it can manufacture by forming the adhesive layer 22 on the prepared base material 21. For example, the resin base material 21 is formed by a film forming method such as a calender film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T die extrusion method, a coextrusion method, or a dry lamination method. Can be produced. The film-substrate 21 after film-forming is given a predetermined surface treatment as needed. In the formation of the pressure-sensitive adhesive layer 22, for example, after preparing the pressure-sensitive adhesive composition for forming the pressure-sensitive adhesive layer, first, the composition is applied on the substrate 21 or on a predetermined separator to form a pressure-sensitive adhesive composition layer. As a coating method of an adhesive composition, roll coating construction, screen coating construction, and gravure coating construction are mentioned, for example. Next, in this pressure-sensitive adhesive composition layer, by heating, it is dried as necessary, and a crosslinking reaction is generated as necessary. The heating temperature is, for example, 80 to 150°C, and the heating time is, for example, 0.5 to 5 minutes. When the pressure-sensitive adhesive layer 22 is formed on the separator, the pressure-sensitive adhesive layer 22 accompanying the separator is bonded to the substrate 21, and then the separator is peeled off. Thereby, the above-mentioned dicing tape 20 having the laminated structure of the base material 21 and the adhesive layer 22 is produced.

In the production of the dicing die-bonding film X, the die-bonding film 10 is bonded to the pressure-sensitive adhesive layer 22 side of the dicing tape 20, for example, by bonding. The bonding temperature is, for example, 30 to 50°C, and preferably 35 to 45°C. The bonding pressure (linear pressure) is, for example, 0.1 to 20 kgf/cm, preferably 1 to 10 kgf/cm. When the pressure-sensitive adhesive layer 22 contains the radiation-curable pressure-sensitive adhesive as described above, radiation such as ultraviolet rays may be applied to the pressure-sensitive adhesive layer 22 before the bonding, and the pressure-sensitive adhesive layer from the side of the base material 21 after the bonding. (22) may be irradiated with radiation such as ultraviolet rays. Or, in the manufacturing process of the dicing die bond film X, such irradiation is not necessary (in this case, it is possible to radiation-cure the pressure-sensitive adhesive layer 22 in the process of using the dicing die bond film X). When the pressure-sensitive adhesive layer 22 is an ultraviolet curable pressure-sensitive adhesive layer, the ultraviolet irradiation amount for curing the pressure-sensitive adhesive layer 22 is, for example, 50 to 500 mJ/cm 2, preferably 100 to 300 mJ/cm 2. In the dicing die bond film X, the region (irradiation region R) in which the pressure-sensitive adhesive layer 22 is irradiated as a measure for reducing the adhesive force, for example, as shown in FIG. 1, dies in the pressure-sensitive adhesive layer 22 This is an area excluding its periphery in the bond film bonding area.

As described above, a dicing die bond film X can be produced. The dicing die bond film X may be provided with a separator (not shown) in the form of covering at least the die bond film 10 on the die bond film 10 side. The separator is an element for protecting the die bond film 10 and the pressure-sensitive adhesive layer 22 from being exposed, and when using the dicing die bond film X, it is peeled from the film.

2 to 7 show a semiconductor device manufacturing method in which the dicing die bond film X as described above is used.

In this semiconductor device manufacturing method, first, as shown in Figs. 2A and 2B, a modified region 30a is formed on the semiconductor wafer W. The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) are already made on the side of the first surface Wa in the semiconductor wafer W, and wiring structures and the like (not shown) required for the semiconductor elements are already formed on the first surface Wa. In this step, after the wafer processing tape T1 having the adhesive surface T1a is adhered to the first surface Wa side of the semiconductor wafer W, the semiconductor wafer W is held on the wafer processing tape T1, and the laser has a condensing point aligned inside the wafer. The light is irradiated from the side opposite to the tape T1 for wafer processing to the semiconductor wafer W along the line to be divided, and a modified region 30a is formed in the semiconductor wafer W by ablation by multiphoton absorption. The modified region 30a is a weakened region for separating the semiconductor wafer W in units of semiconductor chips. A method of forming a modified region 30a on a line to be divided by laser light irradiation on a semiconductor wafer is described in detail in Japanese Patent Laid-Open No. 2002-192370, for example, in the present embodiment. The laser beam irradiation gun is suitably adjusted within the range of the following conditions, for example.

<Conditions for laser light irradiation>

(A) Laser light

Laser light source Semiconductor laser excitation Nd: YAG laser

wavelength 1064 nm

Laser light spot cross section 3.14×10 ^-8 ㎠

Rash form Q switch pulse

Repetition frequency 100㎑ or less

Pulse width 1㎲ or less

Print 1 mJ or less

Laser light quality TEM00

Polarization characteristics Linear polarization

(B) Condensing lens

Magnification 100 times or less

NA 0.55

Transmittance to laser light wavelength 100% or less

(C) The moving speed of the loading platform on which the semiconductor substrate is loaded 280 mm/sec. or less

Next, in a state where the semiconductor wafer W is held on the tape T1 for wafer processing, the semiconductor wafer W is thinned by grinding processing from the second surface Wb to a predetermined thickness, thereby, FIG. 2(c). As shown in the figure, a semiconductor wafer 30A that can be separated into a plurality of semiconductor chips 31 is formed (wafer thinning process). The grinding processing can be performed using a grinding processing apparatus provided with a grinding wheel.

Next, as shown in FIG. 3(a), the semiconductor wafer 30A held by the tape T1 for wafer processing is provided with a die-bonding film 10 of a dicing die-bonding film X to its wafer bonding area 10A. ). Thereafter, as shown in Fig. 3B, the wafer processing tape T1 is peeled from the semiconductor wafer 30A. When the pressure-sensitive adhesive layer 22 in the dicing die-bonding film X is a radiation curable pressure-sensitive adhesive layer, instead of the above-mentioned radiation irradiation in the manufacturing process of the dicing die-bonding film X, the die-bonding film of the semiconductor wafer 30A After bonding to (10), the adhesive layer 22 may be irradiated with radiation such as ultraviolet light from the base 21 side. The irradiation amount is, for example, 50 to 500 mJ/cm 2, and preferably 100 to 300 mJ/cm 2. In the dicing die bond film X, the region (irradiation region R shown in FIG. 1) in which the adhesive layer 22 is irradiated as a measure for reducing the adhesive force is, for example, a die bond film in the adhesive layer 22 ( 10) It is an area excluding the periphery in the joining area.

Next, after the ring frame 41 is affixed onto the die bond film 10 in the dicing die bond film X, as shown in Fig. 4(a), the semiconductor wafer 30A is involved. The dicing die bond film X is fixed to the holder 42 of the expander.

Next, under a relatively low temperature condition, the first expand process (cool expand process) is performed as shown in Fig. 4B, and the semiconductor wafer 30A is reorganized into a plurality of semiconductor chips 31. While being formed, the die-bonding film 10 of the dicing die-bonding film X is cut into small pieces of the die-bonding film 11, and a semiconductor chip 31 with a die-bonding film is obtained. In this step, the hollow cylindrical push-up member 43 provided by the expander is raised and abuts against the dicing tape 20 on the lower side of the drawing of the dicing die bond film X, and the semiconductor wafer 30A The dicing tape 20 of the dicing die bond film X bonded with) is expanded to stretch in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30A. This expansion is performed on the dicing tape 20 under conditions where, for example, tensile stress of 15 to 32 MPa is generated. The temperature condition in the cool expand process is, for example, 0°C or less, preferably -20 to -5°C, more preferably -15 to -5°C, and more preferably -15°C. The expand speed in the cool expand process (the speed at which the push-up member 43 rises) is, for example, 1 to 400 mm/sec. In addition, the expand amount in a cool expand process is 3-16 mm, for example. About these conditions regarding the expansion in a cool expand process, it is the same also in the cool expand process mentioned later.

By such a cool expand process, the die bond film 10 of the dicing die bond film X is cut into small pieces of die bond film 11 to obtain a semiconductor chip 31 having a die bond film. Specifically, in this step, cracks are formed in the fragile modified region 30a in the semiconductor wafer 30A, and fragmentation of the semiconductor chip 31 occurs. At the same time, in the present step, each semiconductor chip 31 of the semiconductor wafer 30A is in close contact with the die bond film 10 in close contact with the pressure-sensitive adhesive layer 22 of the dicing tape 20 to be expanded. In each of the regions in which deformation is suppressed, tensile stress generated in the dicing tape 20 acts in a state where the deformation suppression action does not occur at a location facing the crack formation location of the wafer. As a result, in the die bond film 10, the portion facing the crack formation portion between the semiconductor chips 31 is cut off. After this step, as shown in Fig. 4C, the pushing member 43 is lowered, and the expanded state in the dicing tape 20 is released.

Next, under a relatively high temperature condition, the second expand process is performed as shown in Figs. 5A and 5B, and the distance between the semiconductor chips 31 provided with a die bond film. (Separation distance) is expanded. In this step, the table 44 provided by the expander is raised, and the dicing tape 20 of the dicing die bond film X is expanded. The table 44 is capable of vacuum adsorbing the work by applying a negative pressure to the work on the table surface. The temperature conditions in the second expand process are, for example, 10°C or higher, and preferably 15 to 30°C. The expand speed (the speed at which the table 44 rises) in the second expand process is, for example, 0.1 to 10 mm/sec. In addition, the amount of expand in the second expand process is, for example, 3 to 16 mm. The separation distance of the semiconductor chip 31 provided with the die bond film is extended so that the semiconductor chip 31 provided with the die bond film can be appropriately picked up from the dicing tape 20 in the pickup process described later. . After the dicing tape 20 is expanded by the elevation of the table 44, the table 44 vacuum adsorbs the dicing tape 20. Then, while the adsorption by the table 44 is maintained, as shown in Fig. 5C, the table 44 is lowered with the work. In this embodiment, in this state, the periphery of the semiconductor wafer 30A (the portion outside the semiconductor chip 31 holding area) in the dicing die bond film X is heated and shrunk (heat shrink process). . Thereafter, the vacuum adsorption state by the table 44 is released. By going through the heat shrinking process, in the dicing die bond film X, it is stretched in the above-described first expand process or the second expand process to exert a certain degree of tension on the wafer bonding area once relaxed. The separation distance of the semiconductor chip 31 is fixed even after the vacuum adsorption state is released.

In the method for manufacturing the semiconductor device, after the first expand process, the semiconductor wafer 30A in the dicing die bond film X is not passed through a further expansion of the dicing die bond film X (semiconductor chip 31 ) The portion outside the holding region may be heated to shrink. By such a heat shrink process, in the dicing die bond film X, a predetermined degree of tension is applied to the wafer bonding region which is stretched and relaxed in the first expand process described above, and between the semiconductor chips 31. Therefore, a desired separation distance may be secured.

Next, after the cleaning process of cleaning the semiconductor chip 31 side of the dicing tape 20 with the semiconductor chip 31 provided with the die bond film using a cleaning solution such as water is performed, if necessary. , As shown in FIG. 6, the semiconductor chip 31 provided with the die bond film is picked up from the dicing tape 20 (pickup process). For example, with respect to the semiconductor chip 31 provided with the die-bonding film to be picked up, the pin member 45 of the pick-up mechanism is raised on the lower side of the drawing of the dicing tape 20 to dice the tape 20 After being pushed through, the adsorption jig 46 holds the adsorption. In the pick-up process, the pushing speed of the pin member 45 is, for example, 1 to 100 mm/sec, and the pushing amount of the pin member 45 is, for example, 50 to 3000 µm.

Next, as shown in FIG. 7(a), the semiconductor chip 31 provided with the picked-up die bond film is temporarily fixed to the predetermined adherend 51 through the die bond film 11. . Examples of the adherend 51 include a lead frame, a Tape Automated Bonding (TAB) film, and a wiring board.

Next, as shown in FIG. 7B, the electrode pad (not shown) of the semiconductor chip 31 and the terminal portion (not shown) of the adherend 51 are electrically connected through the bonding wire 52. Connect (wire bonding process). The connection between the electrode pad of the semiconductor chip 31 and the terminal portion of the adherend 51 and the bonding wire 52 is realized by ultrasonic welding with heating, and is performed so as not to heat-cure the die bond film 11. . As the bonding wire 52, a gold wire, an aluminum wire, or a copper wire can be used, for example. The wire heating temperature in wire bonding is, for example, 80 to 250°C. Moreover, the heating time is several seconds to several minutes.

Next, as shown in Fig. 7 (c), the semiconductor chip 31 by the sealing resin 53 for protecting the semiconductor chip 31 or the bonding wire 52 on the adherend 51 is Seal (sealing process). In this process, the thermal curing of the die bond film 11 proceeds. In this process, the sealing resin 53 is formed by the transfer mold technique performed using, for example, a mold. As the constituent material of the sealing resin 53, for example, an epoxy-based resin can be used. In this step, the heating temperature for forming the sealing resin 53 is, for example, 165 to 185°C, and the heating time is, for example, 60 seconds to several minutes. In the case where curing of the sealing resin 53 does not proceed sufficiently in this step (sealing step), a post-curing step for completely curing the sealing resin 53 is performed after this step. Even when the die-bonding film 11 is not completely heat-cured in the sealing step, it is possible to completely heat-cure the die-bonding film 11 together with the sealing resin 53 in the post-curing step. In the post-curing process, the heating temperature is, for example, 165 to 185°C, and the heating time is, for example, 0.5 to 8 hours.

In this way, a semiconductor device can be manufactured.

In the present method for manufacturing a semiconductor device, instead of the above-described configuration that the semiconductor wafer 30A is bonded to the dicing die bond film X, even if the semiconductor wafer 30B manufactured as follows is bonded to the dicing die bond film X. do.

In the production of the semiconductor wafer 30B, first, as shown in FIGS. 8A and 8B, a split groove 30b is formed in the semiconductor wafer W (split groove formation step). The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) are already made on the side of the first surface Wa in the semiconductor wafer W, and wiring structures and the like (not shown) required for the semiconductor elements are already formed on the first surface Wa. In this process, after the tape T2 for wafer processing having the adhesive surface T2a is bonded to the second surface Wb side of the semiconductor wafer W, the first surface of the semiconductor wafer W is held in a state where the semiconductor wafer W is held by the wafer processing tape T1. A dividing groove 30b of a predetermined depth is formed on the Wa side using a rotating blade such as a dicing device. The dividing groove 30b is a gap for separating the semiconductor wafer W in units of semiconductor chips (in the drawing, the dividing groove 30b is typically represented by a thick line).

Next, as shown in Fig. 8(c), the wafer processing tape T3 having the adhesive surface T3a is bonded to the first surface Wa side of the semiconductor wafer W, and the wafer processing tape T2 from the semiconductor wafer W Peeling is performed.

Next, as shown in Fig. 8(d), in a state where the semiconductor wafer W is held by the tape T3 for wafer processing, the semiconductor wafer W is ground by a grinding process from the second surface Wb to a predetermined thickness. Thinning (wafer thinning process). By this wafer thinning process, in the present embodiment, a semiconductor wafer 30B that can be separated into a plurality of semiconductor chips 31 is formed. Specifically, the semiconductor wafer 30B has a portion (connection portion) that connects a portion to be separated into a plurality of semiconductor chips 31 on the wafer on the second surface Wb side. The thickness of the connecting portion in the semiconductor wafer 30B, that is, the distance between the second surface Wb of the semiconductor wafer 30B and the tip end of the second surface Wb side of the dividing groove 30b is, for example, 1 to 30 μm, It is preferably 3 to 20 μm. In order for the semiconductor wafer 30B manufactured as described above to be bonded to the dicing die bond film X instead of the semiconductor wafer 30A, each of the steps described above with reference to FIGS. 3 to 7 may be performed.

9A and 9B specifically show a first expand process (cool expand process) performed after the semiconductor wafer 30B is bonded to the dicing die bond film X. In this step, the hollow cylindrical push-up member 43 provided by the expander is raised and abuts against the dicing tape 20 on the lower side of the drawing of the dicing die bond film X, and the semiconductor wafer 30B The dicing tape 20 of the dicing die bond film X bonded with) is stretched and expanded in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30B. By such a cool expand process, splitting occurs at a thin, easily fragile portion of the semiconductor wafer 30B, resulting in fragmentation of the semiconductor chip 31. In addition, in this step, deformation is suppressed in each region where each semiconductor chip 31 is in close contact with the die bond film 10 in close contact with the pressure-sensitive adhesive layer 22 of the dicing tape 20 to be expanded. On the other hand, tensile stress generated on the dicing tape 20 acts at a position facing the divided grooves between the semiconductor chips 31 in a state in which such deformation suppression does not occur. As a result, in the die bond film 10, the part facing the division groove between the semiconductor chips 31 is cut off. The semiconductor chip 31 provided with the die-bonding film obtained in this way is subjected to the pick-up process described above with reference to FIG. 6 and then provided to the mounting process in the semiconductor device manufacturing process.

In the semiconductor device manufacturing method, the wafer thinning process shown in FIG. 10 may be performed in place of the wafer thinning process described above with reference to FIG. 8D. After going through the above-described process with reference to Fig. 8C, in the wafer thinning process shown in Fig. 10, the semiconductor wafer W is held in the state where the semiconductor wafer W is held by the tape T3 for wafer processing, until the wafer reaches a predetermined thickness. The semiconductor wafer divided body 30C, which is thinned by grinding processing from the second surface Wb, and is held by the tape T3 for wafer processing including a plurality of semiconductor chips 31, is formed. In this step, a method of grinding the wafer (first method) may be employed until the dividing groove 30b itself is exposed on the second side Wb side, and the second groove Wb side may reach the dividing groove 30b. A method of forming a semiconductor wafer split body 30C by grinding the wafer before, and then generating a crack between the split groove 30b and the second surface Wb by the action of the pressing force against the wafer from the rotating grindstone. (Second method) may be employed. Depending on the method employed, the depth from the first surface Wa of the dividing groove 30b formed as described above with reference to FIGS. 8A and 8B is appropriately determined. In FIG. 10, the dividing groove 30b subjected to the first method or the dividing groove 30b subjected to the second method and cracks following it are schematically represented by thick lines. In order for the semiconductor wafer divided body 30C thus manufactured to be bonded to the dicing die bond film X instead of the semiconductor wafer 30A or the semiconductor wafer 30B, each process described above with reference to FIGS. 3 to 7 is performed. It may be done.

11(a) and 11(b) specifically show a first expand process (cool expand process) performed after the semiconductor wafer divided body 30C is bonded to the dicing die bond film X. . In this step, the hollow cylindrical push-up member 43 provided by the expander is raised and abuts against the dicing tape 20 on the lower side of the drawing of the dicing die bond film X, and the semiconductor wafer 30B The dicing tape 20 of the dicing die bond film X bonded with) is stretched and expanded in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30B. In the die bond film 10 in close contact with the pressure-sensitive adhesive layer 22 of the dicing tape 20 to be expanded by the cool expand process, each semiconductor chip 31 of the semiconductor wafer 30B is in close contact. Deformation is suppressed in each of the regions being formed, while tensile occurring in the dicing tape 20 in the state where such a strain suppressing action does not occur at a position facing the divided groove 30b between the semiconductor chips 31. Stress acts. As a result, the portion facing the dividing groove 30b between the semiconductor chips 31 in the die bond film 10 is cut. The semiconductor chip 31 provided with the die-bonding film obtained in this way is subjected to the pick-up process described above with reference to FIG. 6 and then provided to the mounting process in the semiconductor device manufacturing process.

For example, in the die-bonding film 10 in the dicing die-bonding film X that can be used in the semiconductor device manufacturing process as described above, the initial inter-chuck distance for a die-bonding film test piece having a width of 10 mm and a thickness of 210 µm. The above-mentioned configuration in which the elongation at break in a tensile test performed at a condition of 20 mm, -15°C, and a tensile speed of 100 mm/min is 20% or less is for the die bond film 10 in the expanding process for cutting. , The present inventors have found that it is suitable for generating a break in the intended location. For example, as shown in Examples and Comparative Examples described later. In the above-mentioned configuration that the elongation at break in the tensile test for the die bond film 10 is 20% or less, in the expanding process for cutting, the tensile length for cutting the die bond film 10 becomes excessive. It is suitable to generate a fracture due to ductile fracture or the like to the die bond film 10 while avoiding it. From the viewpoint of ensuring good breakability in the expanding process for cutting the die bond film 10, the elongation at break in the tensile test for the die bond film 10 is preferably 18% or less, more preferably It is 15% or less.

The dicing tape 20 of the dicing die bond film X, as described above, for the dicing tape test piece having a width of 10 mm under conditions of an initial interchuck distance of 50 mm, -15°C, and a tensile speed of 300 mm/min. The elongation at break in the tensile test performed is 120% or more. Such a structure is suitable for avoiding the dicing tape from being broken in an expanding process subject to a tensile action. For the dicing tape, in order to avoid breakage in the expanding process subject to a tensile action, the elongation at break of the dicing tape is preferably 150% or more, more preferably 200% or more, and more preferably It is 250% or more.

In addition, the die bond film 10 constituting one component of the dicing die bond film X is taken, the diameter D ₁ of the die bond film 10 and the diameter D ₂ of the wafer bonding region which is part of the die bond film 10 The above-mentioned configuration that (<D ₁ ) satisfies (D ₁ -D ₂ )/D ₂ <0.1 is applied to a semiconductor wafer which is a work in the in-plane direction to the radial direction of the dicing die bond film X of a predetermined size. It is suitable for suppressing the die bond film 10 from being excessive, and therefore, it is suitable for securing a dicing tape area of sufficient width not covered by the film around the die bond film 10. The dicing tape 20 including the base material 21 and the pressure-sensitive adhesive layer 22 tends to have a larger shrinkage rate due to heating than the die bond film 10. Therefore, in the dicing die-bonding film X, the above-described configuration suitable for securing a dicing tape area of a sufficient area not covered by the film around the die-bonding film 10 is the heat-shrinking process described above. In this case, it is suitable for sufficiently shrinking the heat around the semiconductor wafer of the dicing die bond film X. Therefore, a sufficient tension is applied to the wafer bonding area inside the dicing die bond film X to the semiconductor region on the film. It is suitable for securing sufficient cuff width between chips. From the viewpoint of ensuring a sufficient cuff width between the semiconductor chips on the dicing die bond film X in the heat shrink process, the value of (D ₁ -D ₂ )/D ₂ is preferably 0.7 or less, more preferably Is 0.5 or less.

As described above, the dicing die-bonding film X is suitable for securing sufficient cuff width thereafter with respect to the cutting position between chips while realizing good cutting in the expanding process for cutting.

In the dicing die bond film X, as described above, the dicing tape 20 has a width 10 extended to an interchuck distance of 120 mm under conditions of an initial interchuck distance of 100 mm, 23° C., and a tensile speed of 1000 mm/min. The heat shrinkage rate in the heat treatment test performed under the conditions of a heating temperature of 100°C and a heating time of 10 seconds with respect to the test piece of the mm dicing tape 20 is preferably 0.1% or more, more preferably 0.2% or more, and more preferably Is 0.5% or more, more preferably 0.6% or more, more preferably 0.7% or more, more preferably 1% or more, and still more preferably 1.5% or more. Such a configuration is suitable for sufficiently heat-shrinking around the semiconductor wafer of the dicing die-bonding film X in the heat-shrinking process described above, and thus, bonding the wafer inside the dicing die-bonding film X to the corresponding heating point. It is suitable to secure sufficient cuff width between the semiconductor chips 31 on the film by applying a sufficient tension to the region.

Example

[Example 1]

<Production of die bond film>

₁₀₀ parts by weight of acrylic resin A ₁ (trade name "Teisan resin SG-P3", weight average molecular weight of 850,000, glass transition temperature Tg of 12°C, manufactured by Nagase Chemtex Co., Ltd.), and phenol resin (trade name "MEHC- 7851SS”, manufactured by Meiwa Kasei Co., Ltd., 12 parts by mass, and 100 parts by mass of inorganic filler (trade name “SO-25R”, silica, average particle diameter of 500 nm, manufactured by Admatex Co., Ltd.) in methyl ethyl ketone. It was added and mixed to obtain an adhesive composition having a solid content concentration of 20% by mass. Next, an adhesive composition was formed by applying an adhesive composition using an applicator on a silicone release treatment surface of a PET separator (thickness of 50 μm) having a surface subjected to silicone release treatment. Next, the composition layer was heated and dried at 130° C. for 2 minutes, and a die bond film (DAF) of Example 1 having a thickness of 30 μm was produced on a PET separator. The composition of the die bond film in Example 1 and each Example and each comparative example mentioned later is shown in Table 1 (In Table 1, the unit of each numerical value which shows the composition of a die bond film is in the said composition. Relative "parts by mass").

<Production of dicing tape>

In a reaction vessel equipped with a cooling tube, a nitrogen introduction tube, a thermometer, and a stirring device, 100 parts by mass of 2-ethylhexyl acrylate, 19 parts by mass of 2-hydroxyethyl acrylate, and 0.4 mass of benzoyl peroxide as a polymerization initiator The mixture containing 80 parts by mass of toluene as a polymerization solvent was stirred under a nitrogen atmosphere at 60° C. for 10 hours (polymerization reaction). Thus, a polymer solution containing acrylic polymer P ₁ was obtained. Next, a mixture containing a polymer solution containing this acrylic polymer P ₁ , 2-methacryloyloxyethyl isocyanate (MOI), and dibutyltin dilaurylate as an addition reaction catalyst is 60 at 50°C. It was stirred under an air atmosphere for hours (additional reaction). In the reaction solution, the mixing amount of MOI is 1.3 parts by mass with respect to 100 parts by mass of the acrylic polymer P ₁ , and the mixing amount of dibutyl tin dilaurylate is 0.5 parts by mass with respect to 100 parts by mass of the acrylic polymer P ₁ . By this addition reaction, a polymer solution containing an acrylic polymer P ₂ having a methacrylate group in the side chain was obtained. Next, in the polymer solution, 1.3 parts by mass of polyisocyanate compound (trade name "Coronate L", manufactured by Tosoh Corporation) and 100 parts by mass of acrylic polymer P ₂ and 3 parts by mass of photopolymerization initiator (trade name "Irgacure") 184", manufactured by BASF) and mixed to obtain an adhesive composition. Next, a pressure-sensitive adhesive composition was applied by using an applicator on a silicone release-treated surface of a PET separator (thickness of 50 μm) having a surface subjected to silicone release treatment to form a pressure-sensitive adhesive composition layer. Next, this composition layer was heated and dried at 120°C for 2 minutes, and a pressure-sensitive adhesive layer having a thickness of 10 µm was formed on the PET separator. Next, using a laminator, a substrate S ₁ (trade name "FUNCRARE NED #125" made of polyolefin, a thickness of 125 µm, manufactured by Gunze Co., Ltd.) was bonded at room temperature to the exposed surface of the pressure-sensitive adhesive layer at a room temperature. The dicing tape (DT) of Example 1 was produced as mentioned above.

<Production of dicing die bond film>

The above-described die bond film of Example 1 with a PET separator was punched into a disc shape with a diameter of 312 mm. Next, the PET separator is peeled from the die-bonding film, and the PET separator is peeled from the above-mentioned dicing tape, and then the adhesive layer exposed on the dicing tape and the PET separator in the die-bonding film are peeled off. The exposed side was joined using a roll laminator. In this bonding, the bonding speed was 10 mm/min, the temperature condition was 23°C, and the pressure condition was 0.15 MPa. Next, the dicing tape bonded to the die bond film in this way was punched into a disk shape of 390 mm in diameter so that the center of the dicing tape and the center of the die bond film coincide. Next, the pressure-sensitive adhesive layer in the dicing tape was irradiated with ultraviolet light from the side of the EVA substrate. In the ultraviolet irradiation, a high pressure mercury lamp was used, and the total amount of light irradiated was set to 300 mJ/cm 2. As described above, the dicing die bond film of Example 1 having a laminated structure comprising a dicing tape and a die bond film was produced.

[Example 2]

The dicing die bond film of Example 2 was produced in the same manner as the dicing die bond film of Example 1 except that the diameter of the die bond film was 315 μm instead of 312 μm.

[Example 3]

The dicing die-bonding film of Example 3 was produced in the same manner as the dicing die-bonding film of Example 1, except that the diameter of the die-bonding film was 320 μm instead of 312 μm.

[Example 4]

<Production of die bond film>

Acrylic resin A ₂ (trade name "Teisan resin SG-70L", the weight average molecular weight is 900,000, the glass transition temperature Tg is -13 DEG C, manufactured by Nagase Chemtex Co., Ltd.) 100 parts by mass, and phenol resin (trade name "MEHC"-7851SS'', manufactured by Meiwa Kasei Co., Ltd. 210 parts by mass, epoxy resin E ₁ (trade name ``JER1010'', manufactured by Mitsubishi Chemical Co., Ltd.) 52 parts by mass, epoxy resin E <sub>2</sub> (trade name ``JER828'', Mitsubishi Corporation) 140 parts by mass of Chemical Co., Ltd., 3 parts by mass of curing accelerator (trade name "2PHZ-PW", Shikoku Chemical Co., Ltd.), inorganic filler (trade name "SO-25R", silica, average particle size 500 nm) (Made by Admatex Co., Ltd.) 350 parts by weight was added to methyl ethyl ketone and mixed to obtain an adhesive composition having a solid content concentration of 35% by mass. Next, an adhesive composition layer was formed by applying the adhesive composition using an applicator on a silicone release treatment surface of a PET separator (thickness of 50 μm) having a surface subjected to silicone release treatment. Next, the composition layer was heated and dried at 130° C. for 2 minutes to prepare a die bond film of Example 4 having a thickness of 30 μm on a PET separator.

<Production of dicing die bond film>

The above-described die bond film of Example 4 with a PET separator was punched into a disc shape with a diameter of 320 mm. The dicing die bond film of Example 4 was produced in the same manner as the dicing die bond film of Example 1, except that this die bond film was used instead of the die bond film (diameter 312 µm) of Example 1.

[Example 5]

Substrate S ₁ made of polyolefin (trade name "Punk rare NED #125", manufactured by Gunze Co., Ltd.) Substrate S ₂ made of other polyolefin (trade name "ODZ-IVS", thickness 80 µm, manufactured by Okura Kogyo Co., Ltd.) The dicing tape of Example 5 was created like Example 1 except having used. Further, the dicing of Example 1 was used except that the dicing tape of Example 5 was used instead of the dicing tape of Example 1, and the diameter of the die-bonded film punched in a disk shape was 320 μm instead of 312 μm. The dicing die-bonding film of Example 5 was produced like a die-bonding film.

[Example 6]

<Production of dicing tape>

In the same manner as in the dicing tape of Example 1, except that the base material S ₃ (thickness: 100 µm) made of another polyolefin was used instead of the base material S ₁ made of polyolefin (trade name "Punk rare NED #125", manufactured by Gunze Co., Ltd.). , The dicing tape of Example 6 was prepared. Substrate S ₃ made of polyolefin was prepared as follows. First, low-density polyethylene (trade name ``Sumikasen F213-P'', manufactured by Sumitomo Chemical Co., Ltd.), an extruder (trade name ``GM30-28'', screw diameter is 30 mm, screw effective length (L/D) is 28) , Manufactured by GM Engineering Co., Ltd.), and a film was formed by T die melt coextrusion using an extruder and a feed block type T die to obtain a film (the extrusion temperature was 240°C). Next, an embossing treatment (surface roughness Ra was 1.42 µm) was performed on one side of the obtained film to obtain a 100 µm thick film subjected to embossing treatment on one side. Next, corona treatment was performed on the surface opposite to the embossing surface of this film. The base material S ₃ for the dicing tape of Example 6 was prepared as mentioned above.

<Production of dicing die bond film>

The dicing die bond of Example 1 was used except that the dicing tape of Example 6 was used instead of the dicing tape of Example 1, and the diameter of the die bond film punched in a disk shape was 320 μm instead of 312 μm. The dicing die bond film of Example 6 was produced like a film.

[Example 7]

Polyolefin base material S ₁ (trade name "Punk rare NED #125", manufactured by Gunze Co., Ltd.) instead of other polyolefin base material S ₄ (trade name "DDZ#150", thickness 150 mu m, manufactured by Gunze Co., Ltd.) The dicing tape of Example 7 was created like the dicing tape of Example 1 except that it was used. In addition, the dicing of Example 1 was used except that the dicing tape of Example 7 was used instead of the dicing tape of Example 1, and the diameter of the die bond film punched into a disk shape was 320 μm instead of 312 μm. The dicing die bond film of Example 7 was produced like a die bond film.

(Comparative Example 1)

The dicing die bond film of Comparative Example 1 was produced in the same manner as the dicing die bond film of Example 1 except that the diameter of the die bond film was 330 μm instead of 312 μm.

(Comparative Example 2)

<Production of die bond film>

Acrylic resin A ₁ (trade name "Teisan resin SG-P3", weight average molecular weight is 900,000, glass transition temperature Tg is 12°C, manufactured by Nagase Chemtex Co., Ltd.) 100 parts by mass, and phenol resin (trade name "MEHC- 7851SS”, manufactured by Meiwa Kasei Co., Ltd. 6 parts by mass, and 50 parts by mass of inorganic filler (trade name “SO-25R”, silica, average particle diameter of 500 nm, manufactured by Admatex Co., Ltd.) in methyl ethyl ketone. The mixture was added and mixed to obtain an adhesive composition having a solid content concentration of 20% by mass. Next, an adhesive composition layer was formed by applying the adhesive composition using an applicator on a silicone release treatment surface of a PET separator (thickness of 50 μm) having a surface subjected to silicone release treatment. Next, the composition layer was heated and dried at 130° C. for 2 minutes to produce a die bond film of Comparative Example 2 having a thickness of 30 μm on a PET separator.

<Production of dicing die bond film>

The above-described die bond film of Comparative Example 2 with a PET separator was punched into a disc shape with a diameter of 320 mm. The dicing die bond film of Comparative Example 2 was produced in the same manner as the dicing die bond film of Example 1, except that this die bond film was used in place of the die bond film (diameter 312 µm) of Example 1.

(Comparative Example 3)

Polyolefin base material S ₁ (trade name ``Punk rare NED #125'', manufactured by Gunbu Corporation) was used instead of other polyolefin base material S <sub>5</sub> (trade name ``NSO'', thickness: 100 µm, manufactured by Okura Kogyo Co., Ltd.) A dicing tape of Comparative Example 3 was prepared in the same manner as in the dicing tape of Example 1 except that. Then, the dicing die bond film of Comparative Example 3 was produced in the same manner as the dicing die bond film of Example 1, except that the dicing tape of Comparative Example 3 was used instead of the dicing tape of Example 1.

(Comparative Example 4)

Polyolefin base material S ₁ (trade name ``Punk rare NED #125'', manufactured by Gunbu Corporation) was used instead of other polyolefin base material S <sub>5</sub> (trade name ``NSO'', thickness: 100 µm, manufactured by Okura Kogyo Co., Ltd.) A dicing tape of Comparative Example 3 was prepared in the same manner as in the dicing tape of Example 1 except that. In addition, the dicing of Example 1 was used except that the dicing tape of Comparative Example 3 was used instead of the dicing tape of Example 1, and the diameter of the die bond film punched into a disk shape was 320 μm instead of 312 μm. In the same manner as the die bond film, the dicing die bond film of Comparative Example 4 was produced.

<Elongation at break of die bond film (DAF)>

For each die bond film in Examples 1 to 7 and Comparative Examples 1 to 4, by a tensile test performed using a tensile tester (trade name "Autograph AG-X", manufactured by Shimadzu Corporation), The elongation at break at -15°C in the uncured state was investigated. The die bond film test pieces provided for the tensile test were formed by laminating a plurality of die bond films with a thickness of 210 µm for each example and comparative example to form a laminate, and then measuring the length of 60 mm × width of 10 mm from the laminate. Cut into and prepared. In addition, in this tensile test, the initial chuck distance is 20 mm, the temperature condition is -15°C, the settling time at -15°C of the test piece before stretching is 2 minutes, and the tensile speed is 100 mm/min. Table 1 shows the values (%) of the measured elongation at break (the ratio of the length of the elongation at break to the length before elongation).

<Elongation at break of dicing tape (DT)>

For each of the dicing tapes in Examples 1 to 7 and Comparative Examples 1 to 4, by a tensile test performed using a tensile tester (trade name "Autograph AG-X", manufactured by Shimadzu Corporation), The elongation at break at -15°C was investigated. As a dicing tape test piece provided for the tensile test, two types of test pieces (first test piece and second test piece) were prepared for each example and comparative example. The first test piece was cut out from the dicing tape to a size of 90 mm in length and 10 mm in width in the MD direction. The second test piece was cut out from the dicing tape to a size of 90 mm in length and 10 mm in width in the TD direction. In addition, in this tensile test, the initial chuck-to-chuck distance is 50 mm, the temperature condition is -15°C, the settling time at -15°C of the test piece before stretching is 2 minutes, and the tensile speed is 300 mm/min. Table 1 shows the values (%) of the measured elongation at break (the ratio of the length of the elongation at break to the length before elongation). The values in Table 1 are average values of the elongation at break of the first test piece and the elongation at break of the second test piece.

<Heat shrinkage rate of dicing tape (DT)>

For each of the dicing tapes in Examples 1 to 7 and Comparative Examples 1 to 4, the heat shrinkage in the MD direction, the heat shrinkage in the TD direction, and these average heat shrinkage rates were investigated. Specifically, it is as follows.

Two types of test pieces (third test piece and fourth test piece) were prepared for each of Examples and Comparative Examples. The third test piece was cut out from the dicing tape to a size of 140 mm in length and 10 mm in width in the MD direction. The fourth test piece was cut out from the dicing tape to a size of 140 mm in length and 10 mm in width in the TD direction. Each cut piece was provided with a pair of marking lines spaced apart in the longitudinal direction. Each marking line extends in the width direction of the test piece, and the distance between the marking lines is 100 mm. Then, the test piece was stretched using a tensile tester (trade name "Autograph AG-X", manufactured by Shimadzu Corporation). In this stretching operation, the initial chuck distance is 100 mm (the specimen is held on the chuck to match the chuck spacing and the marking line spacing), and 23° C., and a tensile speed of up to 120 mm between the chucks under conditions of 1000 mm/min. The test piece was stretched, and the test piece was left for 60 seconds after being stretched. The test piece after the stretching operation was separated from the tensile tester, the distance between marking lines L ₁ was measured, and then heat treatment was performed. In the heat treatment, the heating temperature is 100°C, and the heating time is 10 seconds. After this heat treatment, the distance L ₂ between the marking lines in the test piece was measured. The value (%) of the heat shrinkage ratio (ratio of the length of shrinkage (L ₁ -L ₂ ) relative to the length L ₁ before shrinkage) calculated for the test piece, and the MD direction heat shrinkage and TD for each Example and Comparative Example Table 1 shows the average heat shrinkage percentage (%) calculated from the direction heat shrinkage.

<Evaluation from the expansion process to the pickup process>

Using the above-mentioned dicing die bond films of Examples 1 to 7 and Comparative Examples 1 to 4, the following bonding process, cutting process (cool expansion process for cutting), separation process (expand process + heat shoe) Link process), and pick-up process.

In the bonding process, a semiconductor wafer held by a tape for wafer processing (trade name "UB-3083D" manufactured by Nitto Denko Corporation) is bonded to a die bond film of a dicing die bond film, and thereafter, a wafer from the semiconductor wafer The processing tape was peeled off. In the bonding, a laminator was used to set the bonding speed to 10 mm/sec, temperature conditions to 50 to 80°C, and pressure conditions to 0.15 MPa. In addition, the semiconductor wafer was formed and prepared as follows.

First, a wafer processing tape (trade name "UB-3083D", manufactured by Nitto Denko Corporation) on the first surface side, which is a plan to form a modified region of a bare wafer (12 inches in diameter, 780 µm thick, manufactured by Tokyo Chemical Industries, Ltd.) Was joined. Next, using a stealth dicing device (trade name "DAL7360 (SDE05)", Power: 0.25 W, frequency: 80 Hz, manufactured by Disco Co., Ltd.), for this bare wafer, the light-converging point on the first surface side in the wafer The modified laser beam is irradiated from the back surface (second surface) side opposite to the first surface along the line to be divided in the wafer, and the modified region for fragmentation (wafer) to the first surface side in the wafer by ablation by multiphoton absorption. A depth of 50 µm from the first surface of the lattice was formed to form a grid of 10 mm×10 mm in one section). Subsequently, the wafer was brought to a thickness of 30 µm by grinding from the second side (the side where no modified region was formed) side of the wafer using a backgrinding device (trade name "DGP8760", manufactured by Disco Corporation). Until it was thinned. As described above, a semiconductor wafer (in a state held by a tape for wafer processing) was formed. The semiconductor wafer includes a section to be divided into a plurality of semiconductor chips (10 mm×10 mm).

The cutting|disconnection process was performed with the cool expand unit which is the 1st expansion unit using the die separator device (brand name "Die separator DDS2300", manufactured by Disco Corporation). Specifically, first, a ring frame (manufactured by Disco Co., Ltd.) made of SUS having a diameter of 12 inches was affixed to the dicing tape pressure-sensitive adhesive layer in the above-mentioned dicing die bond film accompanying a semiconductor wafer at room temperature. Next, the dicing die bond film was set in an apparatus, and the dicing tape of the dicing die bond film accompanying a semiconductor wafer was expanded with the first expand unit of the apparatus. In this cutting step, the temperature is -15°C, the expand speed is 200 mm/sec, and the expand amount is 11 mm.

After the cutting step, the die bond film was observed, and the number of uncut sides among the sides to be cut (that is, the place where the stools are generated when cut along with the cut of the semiconductor wafer against the modified region of the semiconductor wafer) is not cut. It was measured. Then, from the total number of sides to be cut off and the number of sides to be cut off, the ratio of the number of cut sides to the total number of sides to be cut down was calculated as the split ratio (%). Table 1 shows the results. In addition, the dicing tapes of the dicing die-bonding films of Examples 1 to 7 and Comparative Examples 1 to 3 did not generate breakage points in the cutting process, whereas the dicing tapes of the dicing die-bonding films of Comparative Example 4 In the cutting process, a fracture site was generated. Table 1 also shows the results.

The separation process was performed with the second expand unit using a die separator device (trade name "Die Separator DDS2300" manufactured by Disco Co., Ltd.). In this step, first, the dicing tape of the dicing die bond film accompanying the semiconductor wafer which has been subjected to the above-mentioned cutting step is pushed up by the rise of the table capable of vacuum adsorption with the second expand unit of the apparatus. Expanded. In this expand, the temperature is 23°C, the expand speed is 1 mm/sec, and the expand amount is 9 mm. In this process, next, the dicing tape expanded by raising the table was vacuum-adsorbed by the table, and the table was lowered together with the work while maintaining the adsorption by the table. Then, in the dicing die-bonding film, a heat shrinkage treatment was performed on the peripheral portion outside the work bonding region (heat shrink). In this treatment, the temperature of the hot air for heating is 250°C, the air volume is 40 L/min, the heat distance (distance from the hot air jet to the object to be heated) is 20 mm, and the dicing die bond film accompanying a semiconductor wafer is produced. The rotation speed of the holding stage is 3°/second.

After the separation process, the distance between the semiconductor chip generated by reorganization at the wafer central position and the four semiconductor chips adjacent to the four sides was measured using a laser microscope (trade name "H300", manufactured by Lasertech Co., Ltd.). . Table 1 shows the average values of the distances as cuff widths (µm).

In the pick-up process, an attempt was made to pick up a semiconductor chip with a die-bonded film overlaid on a dicing tape using an apparatus having a pick-up mechanism (trade name "Die Bonder SPA-300", manufactured by Shinkawa Co., Ltd.). . In this pickup, the pickup height is 350 µm, and the pickup evaluation number is 50. Regarding this pick-up process, a case where all of the semiconductor chips provided with 50 die-bonding films were picked up from a dicing tape is evaluated as excellent (◎), and a case where the pickup success rate is 90% or more and less than 100% is good (○ ), and the case where the pickup success rate was less than 90% was evaluated as defective (×). The evaluation results are shown in Table 1 (as described above, the pick-up evaluation could not be performed on the dicing die-bonding film of Comparative Example 4 in which a break point was generated in the cutting step).

[evaluation]

According to the die-bonding films of Examples 1 to 7, it was possible to ensure a sufficient cuff width with respect to the chip-to-chip cutting points while realizing good cutting in the expand process.

X: Dicing die bond film
10, 11: die bond film
10A: wafer bonding area
20: dicing tape
21: description
22: adhesive layer
W, 30A, 30B: semiconductor wafer
30C: semiconductor wafer partition
30a: modified region
30b: split groove
31: semiconductor chip

Claims (3)

A dicing tape having a laminated structure comprising a substrate and an adhesive layer,
A die bond film is adhered to the pressure-sensitive adhesive layer in the dicing tape so as to be peelable.
The dicing tape has a breaking elongation of 120% or more in a tensile test performed under conditions of an initial chuck distance of 50 mm, -15°C, and a tensile speed of 300 mm/min for a 10 mm wide dicing tape test piece.
The die bond film has a breaking elongation in a tensile test of 20 mm, a thickness of 210 mm, and a thickness of 210 µm under the conditions of an initial interchuck distance of 20 mm, -15°C, and a tensile speed of 100 mm/min. % Or less,
The die-bonding film, has a disc shape with a diameter D _1, the art the diameter of the disk-shaped and concentrically comprising a wafer bonding area of the D _2, D ₁ and D ₂ are also D _1> D _2, and (D ₁ -D _A dicing die-bonding film satisfying ₂ )/D ₂ <0.1. According to claim 1,
The dicing die bond film having a diameter D ₂ of the wafer bonding region is 200 to 300 mm. The method according to claim 1 or 2,
The dicing tape has a heating temperature of 100 deg. A dicing die-bonding film having a heat shrinkage ratio of 0.1% or more in a heat treatment test performed under initial conditions.

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