TW202028392A - Dicing die attachment film capable of securing a sufficient cuff width for cutting points between chips while realizing excellent cutting in an expansion process - Google Patents

Abstract

In order to obtain a semiconductor chip with a die attachment film, the present invention provides a dicing die attachment film (DDAF) suitable for securing a sufficient cuff width for the cutting points between chips while realizing excellent cutting in the expansion process performed using a DDAF. The DDAF of the present invention has a laminated structure including a die attachment film 10 and a dicing tape 20. The die attachment film 10 is in close contact with an adhesive layer 22 of the dicing tape 20 in a detachable manner. The die attachment film 10 has a breaking elongation rate of 20% or less in a tensile test performed under a specific condition. The die attachment film 10 has a disk shape with a diameter D1, and includes a wafer attachment area with a diameter D2 that is concentric with the disk shape, where D1 and D2 satisfy 0 < (D1-D2)/D2 < 1. Furthermore, the dicing tape 20 has a breaking elongation rate of 120% or more in a tensile test performed under a specific condition.

Description

Diced wafer

The present invention relates to a dicing die film that can be used in the manufacturing process of semiconductor devices.

In the manufacturing process of semiconductor devices, in order to obtain a semiconductor wafer with an adhesive film equivalent to the size of the wafer for die bonding, that is, a semiconductor wafer with a die attach film, a dicing die attach film is sometimes used. The chip adhesive film has, for example, a chip tape including a substrate and an adhesive layer, and a chip adhesive film that can be peeled and adhered to the adhesive layer side.

As one of the methods for obtaining a semiconductor wafer with a die attach film by using a dicing die bond film, a method of severing the die die film by expanding the dicing tape of the die die bond film is known.

In this method, first, a semiconductor wafer is attached to the die attach film of the dicing die attach film. The die attach film has a disc shape that exceeds the size of a semiconductor wafer. For example, semiconductor wafers are processed in such a way that they can be cut together with the die-attach film and singulated into a plurality of semiconductor wafers.

Secondly, in order to cut the adhesive film from the adhesive film on the dicing tape to produce a plurality of adhesive film pieces which are respectively closely attached to the semiconductor wafer, an expansion device is used to cut the dicing tape of the dicing adhesive film into The semiconductor wafer is stretched in the two-dimensional direction of the radial and circumferential directions. In this expansion step, the semiconductor wafer on the die bond film is also cut at the location corresponding to the cut portion of the die bond film, so as to realize the singulation of the semiconductor wafer on the die bond film or the die tape. .

For the dicing die film stretched and relaxed in the expansion step, the peripheral area around the semiconductor wafer is heated to shrink it (heat shrinking step). Thereby, the area (wafer bonding area) inside the peripheral area of the die attach film becomes a state where a certain degree of tension is applied. This heat shrinking step is implemented for the purpose of ensuring the separation distance between the semiconductor wafers cut in the expansion step, that is, the so-called notch width.

Secondly, for example, after a cleaning step, each semiconductor wafer is lifted from the lower side of the dicing tape by the ejector pin member of the pickup mechanism together with the die attach film of the size equivalent to the die attached to it. Pick up on the cut crystal tape. In this way, a semiconductor wafer with a die attach film or adhesive layer is obtained. The semiconductor chip with the die-bonding film is fixed on the adhered body such as the mounting substrate by die-bonding through the die-bonding film.

For example, the technology related to the diced die attach film used in the above manner is described in Patent Documents 1 and 2 below, for example. [Prior Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2007-2173 [Patent Document 2] Japanese Patent Laid-Open No. 2010-177401

[The problem to be solved by the invention]

In the heat shrinking step such as the above in the semiconductor device manufacturing process using the dicing die film of the previous form, the heating part (the peripheral area around the semiconductor wafer) in the dicing die film may not fully shrink . In this case, the wafer bonding area inside the heated part in the die-cutting die-bonding film is not fully stretched, and it is impossible to ensure a sufficient slit width between the semiconductor wafers on the die-cutting die-cutting film. When a sufficient notch width cannot be ensured, sometimes it is not possible to pick up a semiconductor chip with a die attach film from the dicing tape. For example, sometimes when picking up a semiconductor chip, in the chip and the adjacent chip Damage caused by contact between the wafers.

The present invention has been conceived based on the above situation, and its purpose is to provide a method suitable for achieving good slicing during the expansion step using a dicing die-bonding film in order to obtain a semiconductor wafer with die-bonding film attached. The cutting part between the chips ensures the subsequent sufficient cutting width of the chip adhesive film. [Technical means to solve the problem]

The chip adhesive film provided by the present invention includes a chip tape and a chip adhesive film. The dicing tape has a laminated structure including a substrate and an adhesive layer. Regarding the crystal cut tape, the elongation at break ( The ratio of the length of the stretched part at break to the length before stretch) is 120% or more. The adhesive film is peelably attached to the adhesive layer of the dicing tape. Regarding the mucosal film, a test piece of a mucosal film with a width of 10 mm and a thickness of 210 μm was tested under the conditions of an initial distance between the chucks of 20 mm, -15°C and a tensile speed of 100 mm/min. The elongation at break is 20% or less. In addition, the die attach film has a disc shape with a diameter of D ₁ (mm), and includes a wafer bonding area (ie, an area where a semiconductor wafer is bonded) with a diameter D ₂ (mm) that is concentric with the disc shape ), and D ₁ and D ₂ satisfy D ₁ >D ₂ and (D ₁ -D ₂ )/D ₂ <0.1. The diameter D ₂ of the wafer bonding area in the die attach film is, for example, 200-300 mm. In the case that the present diced die attach film is designed as an 8-inch wafer counterpart, D _{2 is,} for example, 200 mm±5 mm, preferably 200 mm±1 mm, and more preferably 200 mm±0.5 mm. In the case where the die-cutting die attach film is designed as a 12-inch wafer counterpart, D _{2 is,} for example, 300 mm ± 5 mm, preferably 300 mm ± 1 mm, and more preferably 300 mm ± 0.5 mm. The diced die-bonding film of this structure can be used to obtain semiconductor wafers with die-bonding film during the manufacturing process of semiconductor devices.

In the manufacturing process of a semiconductor device, as described above, in order to obtain a semiconductor wafer with a die attach film, an extension step for slicing using a die attach film is sometimes implemented. The inventors found that for the mucosal film that is one of the components of the dicing mucosal film, the initial distance between the chucks of the mucosal film test piece with a width of 10 mm and a thickness of 210 μm is 20 mm, -15 The above-mentioned structure with the elongation at break of 20% or less in a tensile test conducted under the conditions of ℃ and a tensile speed of 100 mm/min is suitable for causing the mucosal film in the expansion step for severing to be cut at the predetermined part of the cut. For example, as shown in the following Examples and Comparative Examples. The above-mentioned constitution with the elongation at break in the above-mentioned tensile test of the mucosal film being 20% or less is suitable for the expansion step for cutting to prevent the stretched length used to cut the mucosal film from becoming too large and to make the adhesion Fracture caused by ductile failure of the crystal film. From the viewpoint of ensuring good severability in the expansion step for severing the adhesive film, the elongation at break in the above-mentioned tensile test of the adhesive film is preferably 18% or less, and more preferably 15% or less.

The dicing tape of this wafer-cutting adhesive film is as described above. A test piece of the dicing tape with a width of 10 mm is pulled under the conditions of an initial distance of 50 mm between the chucks, -15°C and a stretching speed of 300 mm/min. The elongation at break in the tensile test is over 120%. This structure is suitable for preventing the dicing tape from breaking during the expansion step subjected to stretching. In order to prevent the dicing tape from breaking during the expansion step subjected to stretching, the elongation at break of the dicing tape is preferably 150% or more, more preferably 200% or more, and more preferably 250% or more.

In the manufacturing process of a semiconductor device, as described above, in order to obtain a semiconductor wafer with a die attach film, a heat shrinking step is sometimes performed after the expansion step for cutting. For the die bond film that becomes one of the components of the die bond film, the diameter D ₁ of the die bond film and the diameter D ₂ (<D ₁ ) of the wafer bonding area as a part of the die bond film satisfy ( The above configuration of D ₁ -D ₂ )/D ₂ <0.1 is suitable for the in-plane or radial direction of the dicing die attach film of a specific size, and prevents the die attach film from becoming too large relative to the semiconductor wafer as the workpiece. It is suitable for ensuring that there is a sufficiently spacious dicing zone area not covered by the film around the mucous film. The dicing tape including the substrate and the adhesive layer has a tendency to shrink by heating more than the adhesive film. Therefore, the above-mentioned configuration is suitable for ensuring that there is a sufficiently spacious dicing zone area not covered by the film in the dicing die-cutting film. It is suitable for making the semiconductor of the dicing die-cutting film during the heat shrinking step The periphery of the wafer is fully heated and shrunk. Therefore, it is suitable for applying sufficient tension to the wafer bonding area inside the heated part of the die-cutting die-bonding film to ensure a sufficient slit width between the semiconductor wafers on the film. From the viewpoint of ensuring a sufficient kerf width between the semiconductor wafers on the die-cut die bonding film in the heat shrinking step, the value of (D _1- D ₂ )/D ₂ is preferably 0.7 or less, more preferably 0.5 the following.

As described above, the die-cutting die-bonding film of the present invention is suitable for achieving good severing in the expansion step for severing and ensuring a sufficient kerf width for the severing part between the wafers.

In this wafer-cutting adhesive film, regarding the above-mentioned wafer-cutting tape, for the initial distance between the chucks is 100 mm, at 23℃ and the stretching speed is 1000 mm/min, the width is 10 mm until the distance between the chucks is 120 mm. The heat shrinkage rate of the cut crystal strip test piece in the heat treatment test conducted under the conditions of a heating temperature of 100°C and a heating time of 10 seconds is preferably 0.1% or more, more preferably 0.2% or more, and more preferably 0.5% or more, It is more preferably 0.6% or more, more preferably 0.7% or more, still more preferably 1% or more, and even more preferably 1.5% or more. When the heat shrinkage rate of the so-called MD (Machine Direction) direction of the dicing tape or its substrate is different from the so-called TD (Transverse Direction) direction, the heat shrinkage rate of the dicing tape of the present invention is Means the average heat shrinkage rate equivalent to the average of the heat shrinkage rate in the MD direction and the heat shrink rate in the TD direction. This structure is suitable for heating and shrinking the surrounding semiconductor wafer of the dicing adhesive film in the heat shrinking step. Therefore, it is suitable for the wafer bonding area inside the heating part of the dicing adhesive film to function sufficiently. Tension, to ensure sufficient slit width between the semiconductor wafers on the film.

FIG. 1 is a schematic cross-sectional view of a die-cut die-bonding film X according to an embodiment of the present invention. The chip adhesive film X has a laminated structure including the chip adhesive film 10 and the chip adhesive tape 20. The dicing tape 20 has a laminated structure including a base material 21 and an adhesive layer 22. The adhesive layer 22 has an adhesive surface 22 a on the side of the mucous film 10. The adhesive film 10 is peelably attached to the adhesive layer 22 of the dicing tape 20 or the adhesive surface 22a thereof. The die-cut die-bonding film X can be used in the process of obtaining a semiconductor chip with die-bonding film during the manufacturing of semiconductor devices, for example, as the user in the following expansion step.

The die sticking film 10 of the dicing die sticking film X has a structure that can function as a die sticking adhesive exhibiting thermosetting properties. The die bond film 10 may have a composition containing a thermosetting resin and a thermoplastic resin as resin components, or may have a composition containing a thermoplastic resin with a thermosetting functional group that can react with a hardener to form a bond. When the die bond film 10 has a composition containing a thermoplastic resin with a thermosetting functional group, the die bond film 10 does not need to further contain a thermosetting resin. The adhesive film 10 may have a single-layer structure or a multilayer structure with different compositions between adjacent layers.

Examples of the thermosetting resin when the adhesive film 10 has a composition containing a thermosetting resin and a thermoplastic resin include epoxy resins, phenol resins, amino resins, unsaturated polyester resins, and polyamines. Carboxylate resin, silicone resin and thermosetting polyimide resin. The die bond film 10 may contain one kind of thermosetting resin or two or more kinds of thermosetting resins. The epoxy resin tends to have a lower content of ionic impurities, which may cause corrosion of the semiconductor wafer to be bonded, and is therefore preferable as a thermosetting resin in the bonding film 10. In addition, as a curing agent for making the epoxy resin exhibit thermosetting properties, a phenol resin is preferable.

As epoxy resins, for example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, and tetrahydrofuran Type, phenol novolac type, o-cresol novolac type, trihydroxyphenylmethane type, tetraphenol ethane type, hydantoin type, triglycidyl isocyanurate type and glycidylamine type epoxy Resin. Phenol novolak type epoxy resin, o-cresol novolak type epoxy resin, biphenyl type epoxy resin, trihydroxyphenylmethane type epoxy resin and tetraphenol ethane type epoxy resin are rich in hardeners In terms of the reactivity and heat resistance of the phenol resin, it is preferable as the epoxy resin in the die bond film 10.

Examples of phenol resins that can be used as hardeners for epoxy resins include novolak-type phenol resins, resol-type phenol resins, and polyhydroxystyrenes such as poly(p-hydroxystyrene). Examples of novolak-type phenol resins include phenol novolac resins, phenol aralkyl resins, cresol novolac resins, tertiary butylphenol novolac resins, and nonylphenol novolac resins. The adhesive film 10 may contain one phenol resin as the hardener of the epoxy resin, or two or more phenol resins as the hardener of the epoxy resin. Phenol novolak resin or phenol aralkyl resin is used as a hardener for epoxy resin used as a bonding agent, because it tends to improve the connection reliability of the bonding agent, so it is used as the bonding film 10 The hardener for epoxy resin is better.

When the adhesive film 10 contains an epoxy resin and a phenol resin as its hardener, the hydroxyl group in the phenol resin is preferably 0.5 to 2.0 equivalents relative to 1 equivalent of epoxy groups in the epoxy resin, and more preferably The ratio of 0.8 to 1.2 equivalents mixes two resins. Such a structure is preferable in that the hardening reaction of the epoxy resin and the phenol resin fully proceeds when the die bond film 10 is hardened.

As the content ratio of the thermosetting resin in the mucous film 10, from the viewpoint of properly expressing its function as a thermosetting adhesive in the mucous film 10, it is preferably 5-60% by mass, more preferably 10-50% by mass.

The thermoplastic resin in the adhesive film 10 is, for example, one that has the function of an adhesive. When the adhesive film 10 has a composition containing a thermosetting resin and a thermoplastic resin, for example, acrylic resin, natural Rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylate copolymer, polybutadiene resin, polycarbonate resin, Thermoplastic polyimide resin, polyimide resin such as 6-nylon or 6,6-nylon, phenoxy resin, saturated polyester resin such as polyethylene terephthalate or polybutylene terephthalate, Polyamide imide resin and fluororesin. The adhesive film 10 may contain one kind of thermoplastic resin, or may contain two or more kinds of thermoplastic resins. Acrylic resin has less ionic impurities and higher heat resistance, so it is preferable as a thermoplastic resin in the die bond film 10.

When the die bond film 10 contains acrylic resin as the thermoplastic resin, the acrylic resin preferably contains the most monomer units derived from (meth)acrylate in terms of mass ratio. "(Meth)acrylic" means "acrylic" and/or "methacrylic".

As the (meth)acrylate used to form the monomer unit of the acrylic resin, that is, the (meth)acrylate used as the monomer of the acrylic resin, for example, alkyl (meth)acrylate, Cycloalkyl (meth)acrylate and aryl (meth)acrylate. Examples of alkyl (meth)acrylates include methyl, ethyl, propyl, isopropyl, butyl, isobutyl, second butyl, and tertiary butyl (meth)acrylate, Amyl, isoamyl, hexyl, heptyl, octyl, 2-ethylhexyl, isooctyl, nonyl, decyl, isodecyl, undecyl, dodecyl (i.e. Lauryl ester), tridecyl ester, tetradecyl ester, cetyl ester, stearyl ester and eicosyl ester. Examples of cycloalkyl (meth)acrylates include cyclopentyl and cyclohexyl (meth)acrylates. Examples of the aryl (meth)acrylate include phenyl (meth)acrylate and benzyl (meth)acrylate. As the constituent monomer of the acrylic resin, one type of (meth)acrylate may be used, or two or more types of (meth)acrylate may be used. In addition, the acrylic resin can be obtained by polymerizing the raw material monomers used to form it. Examples of polymerization methods include solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization.

In order to achieve the modification of the cohesive force and heat resistance of the acrylic resin, for example, one or two or more other monomers copolymerizable with the (meth)acrylate can be used as a constituent monomer. Examples of such monomers include: carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, epoxy group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, propylene Amide and acrylonitrile. Examples of carboxyl group-containing monomers include acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, itaconic acid, maleic acid, and fumaric acid. And crotonic acid. As an acid anhydride monomer, maleic anhydride and itaconic anhydride are mentioned, for example. Examples of hydroxyl-containing monomers include 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, and 6 (meth)acrylate. -Hydroxyhexyl ester, 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxylauryl (meth)acrylate, and (4-hydroxymethyl)acrylate (4-hydroxymethyl) Hexyl) methyl ester. Examples of epoxy group-containing monomers include glycidyl (meth)acrylate and methylglycidyl (meth)acrylate. Examples of the sulfonic acid group-containing monomer include: styrene sulfonic acid, allyl sulfonic acid, 2-(meth)acrylamide-2-methylpropanesulfonic acid, (meth)acrylamide propyl Sulfonic acid and (meth)acryloxy naphthalene sulfonic acid. As a phosphoric acid group-containing monomer, for example, 2-hydroxyethyl acryloyl phosphate may be mentioned.

From the viewpoint of achieving higher cohesion in the adhesive film 10, the acrylic resin contained in the adhesive film 10 is preferably a copolymer of butyl acrylate, ethyl acrylate and acrylonitrile.

When the die bond film 10 has a composition containing a thermoplastic resin with a thermosetting functional group, as the thermoplastic resin, for example, an acrylic resin containing a thermosetting functional group can be used. The acrylic resin used to form the thermosetting functional group-containing acrylic resin preferably contains the most monomer units derived from (meth)acrylate in terms of mass ratio. As such (meth)acrylate, for example, the same (meth)acrylate as described above as a constituent monomer of the acrylic resin contained in the die bond film 10 can be used. On the other hand, as a thermosetting functional group for forming the acrylic resin containing a thermosetting functional group, a glycidyl group, a carboxyl group, a hydroxyl group, and an isocyanate group are mentioned, for example. Among these, glycidyl and carboxyl groups can be preferably used. That is, as the acrylic resin containing a thermosetting functional group, a glycidyl group-containing acrylic resin or a carboxyl group-containing acrylic resin can be preferably used. Furthermore, according to the type of thermosetting functional group in the acrylic resin containing thermosetting functional group, a curing agent that can react with it is selected. When the thermosetting functional group of the acrylic resin containing the thermosetting functional group is a glycidyl group, as the curing agent, the same phenol resin as described above as the curing agent for epoxy resin can be used .

Regarding the mucous film 10 before hardening for the bonding, in order to achieve a certain degree of cross-linking, for example, it is preferably pre-prepared in the resin composition for forming the mucous film. The functional group at the end of the molecular chain of the resin component and the like react to form a multifunctional compound as a crosslinking agent. Such a structure is better for the die bond film 10 in terms of improving the bonding characteristics at high temperatures and improving the heat resistance. As such a crosslinking agent, a polyisocyanate compound is mentioned, for example. Examples of the polyisocyanate compound include toluene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1,5-naphthalene diisocyanate, and adducts of polyol and diisocyanate. Regarding the content of the crosslinking agent in the resin composition for forming a sticky film, relative to 100 parts by mass of the resin having the above-mentioned functional group that can react with the crosslinking agent to form a bond, the agglomeration of the formed sticky film 10 is increased From the viewpoint of strength, it is preferably 0.05 parts by mass or more, and from the viewpoint of enhancing the adhesive force of the formed die attach film 10, it is preferably 7 parts by mass or less. In addition, as the crosslinking agent in the adhesive film 10, other polyfunctional compounds such as epoxy resins and polyisocyanate compounds may be used in combination.

The glass transition temperature of the acrylic resin and the thermosetting functional group-containing acrylic resin blended in the die bond film 10 is preferably -40 to 10°C. Regarding the glass transition temperature of the polymer, the glass transition temperature (theoretical value) calculated based on the following Fox formula can be used. The Fox formula is the relationship between the glass transition temperature Tg of the polymer and the glass transition temperature Tgi of the homopolymer of each monomer in the polymer. In the following Fox formula, Tg represents the glass transition temperature (°C) of the polymer, Wi represents the weight fraction of monomer i constituting the polymer, and Tgi represents the glass transition temperature (°C) of the homopolymer of monomer i. Regarding the glass transition temperature of homopolymers, literature values can be used, such as in "New Polymer Library 7 Introduction to Synthetic Resins for Coatings" (Mizuoka Kitaoka, Polymer Publishing Association, 1995) or "Acrylic Ester Catalog (1997 edition) )” (Mitsubishi Rayon Co., Ltd.) lists the glass transition temperatures of various homopolymers. On the other hand, the glass transition temperature of the homopolymer of the monomer can also be obtained by the method specifically disclosed in Japanese Patent Laid-Open No. 2007-51271.

Fox formula 1/(273＋Tg)=Σ[Wi/(273＋Tgi)]

The sticky film 10 may contain fillers. In terms of adjusting the elastic modulus, yield point strength, elongation at break and other physical properties of the mucosal film 10, it is preferable to mix fillers in the mucosal film 10. Examples of fillers include inorganic fillers and organic fillers. The filler may have various shapes such as spherical, needle-like, and sheet-like shapes. In addition, the sticky film 10 may contain one kind of filler, or may contain two or more kinds of fillers.

Examples of constituent materials of the above-mentioned inorganic filler include: aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate crystals Whiskers, boron nitride, crystalline silicon dioxide and amorphous silicon dioxide. As a constituent material of the inorganic filler, metal simple substances or alloys such as aluminum, gold, silver, copper, nickel, etc., amorphous carbon black, graphite, etc. can also be cited. When the sticky film 10 contains an inorganic filler, the content of the inorganic filler is preferably 10% by mass or more, more preferably 20% by mass or more, and even more preferably 30% by mass or more. Moreover, the same content is preferably 50% by mass or less, more preferably 45% by mass or less, and even more preferably 40% by mass or less.

As the constituent material of the above organic filler, for example, polymethylmethacrylate (PMMA), polyimide, polyimide, polyetheretherketone, polyetherimide, and polyesterimide can be cited. . When the sticky film 10 contains an organic filler, the content of the organic filler is preferably 2% by mass or more, more preferably 5% by mass or more, and even more preferably 8% by mass or more. In addition, the same content is preferably 20% by mass or less, more preferably 17% by mass or less, and more preferably 15% by mass or less.

When the mucous film 10 contains a filler, the average particle diameter of the filler is preferably 0.005-10 μm, more preferably 0.05-1 μm. The configuration of the filler with an average particle size of 0.005 μm or more is suitable for the following aspects: in the die attach film 10, high wettability or adhesion to adherends such as semiconductor wafers can be achieved. The configuration of the filler with an average particle size of 10 μm or less is suitable for obtaining sufficient filler addition effect in the mucous film 10 and ensuring heat resistance. The average particle diameter of the filler can be obtained using, for example, a photometric particle size distribution meter (trade name "LA-910", manufactured by Horiba Manufacturing Co., Ltd.).

The mucosal film 10 may contain a thermosetting catalyst. The thermosetting catalyst is preferably formulated in the mucosal film 10 in the following aspects: when the mucosal film 10 is cured, the curing reaction of the resin component is fully progressed or the curing reaction speed is increased. Examples of such thermosetting catalysts include imidazole-based compounds, triphenylphosphine-based compounds, amine-based compounds, and trihaloborane-based compounds. Examples of imidazole-based compounds include 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, and 2-ethyl-4-methylimidazole , 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-methyl Imidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6-[2' -Methylimidazolyl-(1')]-Ethyl tris, 2,4-Diamino-6-[2'-Undecylimidazolyl-(1')]-Ethyl tris , 2,4-Diamino-6-[2'-Ethyl-4'-Methylimidazolyl-(1')]-Ethyl Tris 𠯤, 2,4-Diamino-6-[2 '-Methylimidazolyl-(1')]-ethyl isocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole and 2-phenyl-4-methyl基-5-hydroxymethylimidazole. Examples of triphenylphosphine compounds include triphenylphosphine, tributylphosphine, tris(p-methylphenyl)phosphine, tris(nonylphenyl)phosphine, diphenyltolylphosphine, and tetraphenyl Phosphonium bromide, methyl triphenyl phosphonium, methyl triphenyl phosphonium chloride, methoxymethyl triphenyl phosphonium and benzyl triphenyl phosphonium chloride. The triphenylphosphine compound also includes a compound having both a triphenylphosphine structure and a triphenylborane structure. Examples of such a compound include tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium tetra-p-triborate, benzyltriphenylphosphonium tetraphenylborate, and triphenylphosphine triphenylborane. Examples of the amine compound include monoethanolamine trifluoroborate and dicyandiamide. Examples of the trihaloborane-based compound include trichloroborane. The adhesive film 10 may contain one type of thermosetting catalyst, or may contain two or more types of thermosetting catalysts.

The mucous film 10 may contain one or more than two other components as needed. Examples of the other components include flame retardants, silane coupling agents, and ion scavengers. Examples of flame retardants include antimony trioxide, antimony pentoxide, and brominated epoxy resin. As the silane coupling agent, for example, β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxypropylmethyl Base diethoxysilane. Examples of ion scavengers include: hydrotalcite, bismuth hydroxide, hydrous antimony oxide (for example, "IXE-300" manufactured by Toagosei Co., Ltd.), zirconium phosphate of a specific structure (for example, "IXE-100"), magnesium silicate (such as "KYOWAAD 600" manufactured by Kyowa Chemical Industry Co., Ltd.), and aluminum silicate (such as "KYOWAAD 700" manufactured by Kyowa Chemical Industry Co., Ltd.). Compounds that can form complexes with metal ions can also be used as ion traps. Examples of such compounds include triazole-based compounds, tetrazole-based compounds, and bipyridine-based compounds. Among these, from the viewpoint of the stability of the complex formed with the metal ion, a triazole-based compound is preferred. Examples of such triazole-based compounds include 1,2,3-benzotriazole, 1-{N,N-bis(2-ethylhexyl)aminomethyl}benzotriazole, and carboxybenzene Triazole, 2-(2-hydroxy-5-methylphenyl)benzotriazole, 2-(2-hydroxy-3,5-di-tert-butylphenyl)-5-chlorobenzotriazole , 2-(2-hydroxy-3-tert-butyl-5-methylphenyl)-5-chlorobenzotriazole, 2-(2-hydroxy-3,5-di-tert-pentylphenyl) Benzotriazole, 2-(2-hydroxy-5-third octylphenyl) benzotriazole, 6-(2-benzotriazole)-4-third octyl-6'-third Butyl-4'-methyl-2,2'-methylene bisphenol, 1-(2,3-dihydroxypropyl)benzotriazole, 1-(1,2-dicarboxydiethyl) Benzotriazole, 1-(2-ethylhexylaminomethyl)benzotriazole, 2,4-Ditertiarypentyl-6-{(H-benzotriazol-1-yl)methyl } Phenol, 2-(2-hydroxy-5-tert-butylphenyl)-2H-benzotriazole, 3-[3-tert-butyl-4-hydroxy-5-(5-chloro-2H- Benzotriazol-2-yl)phenyl]octyl propionate, 3-[3-tert-butyl-4-hydroxy-5-(5-chloro-2H-benzotriazol-2-yl)phenyl ] 2-ethylhexyl propionate, 2-(2H-benzotriazol-2-yl)-6-(1-methyl-1-phenylethyl)-4-(1,1,3, 3-tetramethylbutyl)phenol, 2-(2H-benzotriazol-2-yl)-4-tert-butylphenol, 2-(2-hydroxy-5-methylphenyl)benzotris Azole, 2-(2-hydroxy-5-tert-octylphenyl)-benzotriazole, 2-(3-tert-butyl-2-hydroxy-5-methylphenyl)-5-chlorobenzene O-triazole, 2-(2-hydroxy-3,5-di-tertiary pentylphenyl) benzotriazole, 2-(2-hydroxy-3,5-di-tertiary butylphenyl)-5- Chloro-benzotriazole, 2-[2-hydroxy-3,5-bis(1,1-dimethylbenzyl)phenyl]-2H-benzotriazole, 2,2'-methylenebis [6-(2H-Benzotriazol-2-yl)-4-(1,1,3,3-tetramethylbutyl)phenol], (2-[2-hydroxy-3,5-bis( α,α-Dimethylbenzyl)phenyl]-2H-benzotriazole and 3-[3-(2H-benzotriazol-2-yl)-5-tert-butyl-4-hydroxybenzene Hydroquinone compounds, hydroxyanthraquinone compounds, polyphenol compounds, and other specific hydroxyl-containing compounds can also be used as ion scavengers. Specific examples of such hydroxyl-containing compounds include: 1,2- Hydroquinone, alizarin, 1,5-dihydroxyanthraquinone, tannin, gallic acid, methyl gallate and pyrogallol.

The thickness of the die attach film 10 is preferably 3 μm or more, more preferably 7 μm or more, and even more preferably 10 μm or more. In addition, the thickness of the die attach film 10 is preferably 150 μm or less, more preferably 140 μm or less, and even more preferably 135 μm or less.

The mucous film 10 has a disk shape with a diameter D ₁ (mm). In addition, the die bonding film 10 includes a wafer bonding area 10A with a diameter D ₂ (mm) that is concentric with the disk shape. The diameter D _{2 of the} wafer bonding area 10A is preferably in the range of 200-300 mm. Specifically, when the dicing die bonding film X is designed as an 8-inch wafer corresponding type, D _{2 is,} for example, 200 mm±5 mm, preferably 200 mm±1 mm, and more preferably 200 mm± 0.5 mm. When the dicing die bonding film X is designed as a 12-inch wafer counterpart, D _{2 is,} for example, 300 mm±5 mm, preferably 300 mm±1 mm, and more preferably 300 mm±0.5 mm.

Die-cut crystal film in X, the diameter D of the die-bonding film 10 is bonded to the wafer ₁ and the diameter D of the region 10A ₂ satisfies D _1> D ₂ and _{(D 1 -D 2) / D} 2 <0.1. The value of (D ₁ -D ₂ )/D ₂ is preferably 0.7 or less, more preferably 0.5 or less. These structures are suitable for ensuring that there is a sufficiently spacious dicing zone area around the dicing sticky film X that is not covered by the dicing sticky film.

Regarding mucosal membrane 10, one of the tensile tests performed on a mucosal membrane test piece with a width of 10 mm and a thickness of 210 μm under the conditions of an initial distance between the chucks of 20 mm, -15°C and a tensile speed of 100 mm/min The elongation at break (the ratio of the length of the elongation at break to the length before elongation) is 20% or less, preferably 18% or less, and more preferably 15% or less. The elongation at break can be measured using a tensile tester (trade name "Autograph AG-X", manufactured by Shimadzu Corporation). In addition, the elongation at break of the adhesive film 10 can be adjusted by the amount of inorganic filler and/or organic filler in the adhesive film 10, or the glass transition temperature of the acrylic resin in the adhesive film 10 Control and so on.

The viscosity of the mucous film 10 at 120° C. in the uncured state is preferably 300 Pa·s or more, more preferably 700 Pa·s or more, and even more preferably 1000 Pa·s or more. In addition, the viscosity at 120° C. in the uncured state of the mucous film 10 is preferably 5000 Pa·s or less, more preferably 4500 Pa·s or less, and even more preferably 4000 Pa·s or less.

For example, in the peel test of the above adhesive film 10 at a temperature of 23°C, a peeling angle of 180° and a tensile speed of 300 mm/min, relative to the SUS (Steel Use Stainless, Japanese stainless steel standard) plane, it shows, for example, 0.3～ 180° peeling adhesion of 20 N/10 mm. Such a configuration is suitable for ensuring the retention of the workpiece by the dicing die bonding film X or the die bonding film 10 thereof.

The substrate 21 of the dicing tape 20 in the dicing die bonding film X is an element that functions as a support in the dicing tape 20 or the dicing die bonding film X. The substrate 21 is, for example, a plastic substrate, and as the plastic substrate, a plastic film can be preferably used. As the constituent material of the plastic substrate, for example, polyolefin, polyester, polyurethane, polycarbonate, polyether ether ketone, polyimide, polyetherimide, polyamide, all Aromatic polyamides, polyvinyl chloride, polyvinylidene chloride, polyphenylene sulfide, aromatic polyamides, fluororesins, cellulose resins, and silicone resins. Examples of polyolefins include low density polyethylene, linear low density polyethylene, medium density polyethylene, high density polyethylene, ultra-low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolymer Polypropylene, polybutene, polymethylpentene, ethylene-vinyl acetate copolymer, ionic polymer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylate copolymer, ethylene-butylene Ethylene copolymer and ethylene-hexene copolymer. Examples of polyesters include polyethylene terephthalate, polyethylene naphthalate, and polybutylene terephthalate. The substrate 21 may include one material or two or more materials. The substrate 21 may have a single-layer structure or a multilayer structure. When the adhesive layer 22 on the substrate 21 is an ultraviolet curable type as described below, the substrate 21 preferably has ultraviolet light permeability. In addition, when the base material 21 includes a plastic film, it may be an unstretched film, a uniaxially stretched film, or a biaxially stretched film.

The base material 21 preferably has heat shrinkability. Furthermore, when the substrate 21 includes a plastic film, in terms of achieving isotropic heat shrinkability of the dicing tape 20 or the substrate 21, the substrate 21 is preferably a biaxially stretched film. The heat shrinkage rate of the dicing tape 20 or the substrate 21 obtained by the heat treatment test under the conditions of a heating temperature of 100°C and a heat treatment time of 60 seconds is preferably 2-30%, more preferably 2-25% , More preferably 3-20%, still more preferably 5-20%. The thermal shrinkage rate of the base material 21 refers to at least one of the so-called thermal shrinkage rate in the MD direction and the so-called thermal shrinkage rate in the TD direction.

The surface of the substrate 21 on the adhesive layer 22 side may be subjected to physical treatment, chemical treatment or primer treatment to improve the adhesion with the adhesive layer 22. Examples of physical treatments include corona treatment, plasma treatment, sand matte treatment, ozone exposure treatment, flame exposure treatment, high-voltage electric shock exposure treatment, and ionizing radiation treatment. As a chemical treatment, for example, chromic acid treatment is mentioned.

Regarding the thickness of the substrate 21, from the viewpoint of ensuring the strength for the substrate 21 to function as a support in the dicing tape 20 or the chip bonding film X, it is preferably 40 μm or more, more preferably It is 50 μm or more, more preferably 55 μm or more, and even more preferably 60 μm or more. In addition, from the viewpoint of achieving moderate flexibility in the dicing tape 20 or the dicing die bonding film X, the thickness of the substrate 21 is preferably 200 μm or less, more preferably 180 μm or less, and more preferably 150 Below μm.

The adhesive layer 22 of the dicing tape 20 contains an adhesive. The adhesive can be an adhesive that can deliberately reduce the adhesive force by external action during the use of the chip adhesive film X (adhesive that can reduce the adhesive force), or it can be used for chip adhesive Adhesives (non-decreasing adhesives) in which the adhesive force of the crystal film X is almost or not reduced due to external effects. Regarding the use of the adhesive with reduced adhesive force or the adhesive with non-adhesive force as the adhesive in the adhesive layer 22, the semiconductor chip can be singulated according to the use of the dicing die bonding film X. The method or condition can be selected appropriately, such as the use state of the diced wafer X.

In the case of using an adhesive with reduced adhesive force as the adhesive in the adhesive layer 22, the adhesive layer 22 can be used separately to show a relatively high adhesive force during the use of the diced wafer X It shows a state of relatively low adhesion. For example, when using the chip adhesive film X in the following expansion step, in order to suppress and prevent the swelling or peeling of the adhesive film 10 from the adhesive layer 22, the high adhesive force state of the adhesive layer 22 is used. On the other hand, After that, in the following pick-up step of picking up the semiconductor wafer with the die-bonding film from the die-cutting tape 20 of the die-cut die-bonding film X, it is easy to pick up the die-bonding film from the adhesive layer 22 For semiconductor chips, the low adhesion state of the adhesive layer 22 can be used.

Examples of such adhesives that can reduce the adhesive force include: adhesives that can be cured by radiation during the use of the diced wafer X (radiation-curable adhesives) or heat-foaming adhesives Wait. In the adhesive layer 22 of this embodiment, one type of adhesive with reduced adhesive force may be used, or two or more types of adhesives with reduced adhesive force may be used. In addition, the entire adhesive layer 22 may be formed by an adhesive with reduced adhesive force, or a part of the adhesive layer 22 may be formed by an adhesive with reduced adhesive force. For example, when the adhesive layer 22 has a single-layer structure, the entire adhesive layer 22 may be formed from an adhesive with reduced adhesive force, or a specific part of the adhesive layer 22 may be formed from an adhesive with reduced adhesive force ( For example, as the center area of the workpiece's bonding target area), other parts (for example, the bonding target area of the ring frame and the area outside the center area) are formed by the non-reducing adhesive. In addition, when the adhesive layer 22 has a multilayer structure, all layers of the multilayer structure may be formed by an adhesive with reduced adhesion, or a part of the multilayer structure may be formed by an adhesive with reduced adhesion.

As the radiation curable adhesive used for the adhesive layer 22, for example, an adhesive of the type hardened by irradiation with electron beams, ultraviolet rays, α rays, β rays, γ rays or X rays can be used particularly preferably. A type of adhesive that is cured by ultraviolet radiation (ultraviolet curing adhesive).

Examples of the radiation curable adhesive used for the adhesive layer 22 include: as an acrylic adhesive, a base polymer such as an acrylic polymer, and radiation polymerizable carbon-carbon double bond and other functional groups can be exemplified. Additive radiation-curable adhesive of polymerizable monomer or oligomer.

It is preferable that the said acrylic polymer contains the monomer unit derived from (meth)acrylate at the mass ratio at most. The (meth)acrylate used to form the monomer unit of the acrylic polymer, that is, the (meth)acrylate used as the constituent monomer of the acrylic polymer, for example: alkyl (meth)acrylate , Cycloalkyl (meth)acrylate and aryl (meth)acrylate, more specifically, the same as those described above for the acrylic resin used for the die bond film 10 (a基)acrylate. As the constituent monomer of the acrylic polymer, one type of (meth)acrylate may be used, or two or more types of (meth)acrylate may be used. As the constituent monomers of the acrylic polymer, 2-ethylhexyl acrylate and lauryl acrylate are preferred. In addition, in terms of allowing the adhesive layer 22 to appropriately express the basic characteristics of the adhesiveness by (meth)acrylate, the ratio of (meth)acrylate in the entire monomer constituting the acrylic polymer is preferable It is 40% by mass or more, more preferably 60% by mass or more.

The acrylic polymer may contain one or two or more other monomers copolymerizable with (meth)acrylate in its constituent monomers, for example, in order to achieve modification of its cohesive force or heat resistance. Examples of such monomers include: carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, epoxy group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, propylene The amide and acrylonitrile, more specifically, the same copolymerizable monomers as those described above regarding the acrylic resin used for the die bond film 10 can be cited.

In order to form a crosslinked structure in the polymer backbone of the acrylic polymer, it may contain monomer units derived from a multifunctional monomer copolymerizable with monomer components such as (meth)acrylate. As such a multifunctional monomer, for example, hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, Neopentyl glycol di(meth)acrylate, pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate Acrylate, polyglycidyl (meth)acrylate, polyester (meth)acrylate, and (meth)acrylate urethane. "(Meth)acrylate" means "acrylate" and/or "methacrylate". As the constitutional monomer of the acrylic polymer, one type of polyfunctional monomer may be used, or two or more types of polyfunctional monomer may be used. In terms of allowing the adhesive layer 22 to appropriately express the basic characteristics of the adhesiveness by (meth)acrylate, the ratio of the polyfunctional monomer in the entire monomer constituting the acrylic polymer is preferably 40 mass % Or less, more preferably 30% by mass or less.

The acrylic polymer can be obtained by polymerizing the raw material monomers used to form it. Examples of polymerization methods include solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization. From the viewpoint of high cleanliness in the semiconductor device manufacturing method using the dicing tape 20 or the dicing die bonding film X, it is preferable that the adhesive layer 22 in the dicing tape 20 or the dicing die bonding film X is There are fewer low-molecular-weight substances, so the number average molecular weight of the acrylic polymer is preferably 100,000 or more, more preferably 200,000 to 3 million.

The adhesive layer 22 or the adhesive used to form it is to increase the number average molecular weight of the base polymer such as acrylic polymer, and may contain an external crosslinking agent, for example. Examples of external crosslinking agents for reacting with base polymers such as acrylic polymers to form a crosslinked structure include polyisocyanate compounds, epoxy compounds, polyol compounds, aziridine compounds, and melamine crosslinking agents. The content of the external crosslinking agent in the adhesive layer 22 or the adhesive used to form it is preferably 5 parts by mass or less, and more preferably 0.1-5 parts by mass relative to 100 parts by mass of the base polymer.

Examples of the radiation polymerizable monomer component used to form the radiation curable adhesive include: (meth)acrylate urethane, trimethylolpropane tri(meth)acrylate, pentaerythritol tris (meth) Base) acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol monohydroxy penta(meth)acrylate, dipentaerythritol hexa(meth)acrylate and 1,4-butanediol di(meth)acrylate . Examples of the radiation polymerizable oligomer component used to form the radiation curable adhesive include: urethane, polyether, polyester, polycarbonate, polybutadiene, etc. The oligomer preferably has a molecular weight of about 100 to 30,000. The total content of the radiation polymerizable monomer components or oligomer components in the radiation curable adhesive is determined within the range that can suitably reduce the adhesive force of the formed adhesive layer 22, compared to the basis of acrylic polymers. 100 parts by mass of the polymer, preferably 5 to 500 parts by mass, more preferably 40 to 150 parts by mass. In addition, as an additive type radiation-curable adhesive, for example, the one disclosed in Japanese Patent Laid-Open No. 60-196956 can be used.

Examples of the radiation curable adhesive used in the adhesive layer 22 include functional groups such as carbon-carbon double bonds that are contained in the polymer side chain or the polymer main chain and have radiation polymerizable carbon-carbon double bonds at the end of the polymer main chain. The intrinsic radiation-curable adhesive of the base polymer. Such an intrinsic radiation-curable adhesive is suitable for suppressing unexpected changes over time in adhesive properties caused by the movement of low molecular weight components in the formed adhesive layer 22.

As the base polymer contained in the internal radiation-curable adhesive, one having an acrylic polymer as a basic skeleton is preferred. As the acrylic polymer forming such a basic skeleton, the aforementioned acrylic polymer can be used. As a method of introducing radiation polymerizable carbon-carbon double bonds into acrylic polymers, for example, the following method can be cited: raw material monomers containing monomers having specific functional groups (first functional groups) are copolymerized to obtain acrylic After the polymer is polymerized, a compound with a specific functional group that can react with the first functional group (the second functional group) and the radiation polymerizable carbon-carbon double bond is polymerized by radiation to maintain the carbon-carbon double bond Condensation reaction or addition reaction to acrylic polymer in a neutral state.

As a combination of the first functional group and the second functional group, for example, a carboxyl group and an epoxy group, an epoxy group and a carboxyl group, a carboxyl group and an aziridinyl group, an aziridinyl group and a carboxyl group, a hydroxyl group and an isocyanate group, Isocyanate and hydroxyl. Among these combinations, from the viewpoint of the ease of tracking the reaction, a combination of a hydroxyl group and an isocyanate group or a combination of an isocyanate group and a hydroxyl group is preferred. In addition, it is more technically difficult to produce a polymer with a more reactive isocyanate group. Therefore, from the viewpoint of the ease of production or acquisition of acrylic polymer, the above-mentioned acrylic polymer side is more preferable When the first functional group is a hydroxyl group and the second functional group is an isocyanate group. In this case, as an isocyanate compound having both a radiation polymerizable carbon-carbon double bond and an isocyanate group as the second functional group, that is, an isocyanate compound containing a radiation polymerizable unsaturated functional group, for example: Allyl isocyanate, 2-methacryloyl oxyethyl isocyanate (MOI) and m-isopropenyl-α,α-dimethylbenzyl isocyanate.

系化合物、樟腦醌、鹵代酮、醯基膦氧化物及醯基磷酸酯。作為α-酮醇系化合物，例如可列舉：4-(2-羥基乙氧基)苯基(2-羥基-2-丙基)酮、α-羥基-α,α'-二甲基苯乙酮、2-甲基-2-羥基苯丙酮及1-羥基環己基苯基酮。作為苯乙酮系化合物，例如可列舉：甲氧基苯乙酮、2,2-二甲氧基-1,2-二苯基乙烷-1-酮、2,2-二乙氧基苯乙酮及2-甲基-1-[4-(甲硫基)-苯基]-2-𠰌啉基丙烷-1。作為安息香醚系化合物，例如可列舉：安息香乙醚、安息香異丙醚及大茴香偶姻甲醚。作為縮酮系化合物，例如可列舉：苯偶醯二甲基縮酮。作為芳香族磺醯氯系化合物，例如可列舉：2-萘磺醯氯。作為光活性肟系化合物，例如可列舉：1-苯基-1,2-丙二酮-2-(O-乙氧基羰基)肟。作為二苯甲酮系化合物，例如可列舉：二苯甲酮、苯甲醯苯甲酸及3,3'-二甲基-4-甲氧基二苯甲酮。作為9-氧硫

系化合物，例如可列舉：9-氧硫

、2-氯-9-氧硫

、2-甲基-9-氧硫𠮿

、2,4-二甲基-9-氧硫𠮿

、異丙基-9-氧硫𠮿

、2,4-二氯-9-氧硫𠮿

、2,4-二乙基-9-氧硫𠮿

及2,4-二異丙基-9-氧硫𠮿

。黏著劑層22中之輻射硬化性黏著劑中之光聚合起始劑之含量相對於丙烯酸系聚合物等基礎聚合物100質量份例如為0.05～20質量份。The radiation curable adhesive used for the adhesive layer 22 preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include: α-ketol-based compounds, acetophenone-based compounds, benzoin ether-based compounds, ketal-based compounds, aromatic sulfonyl chloride-based compounds, photoactive oxime-based compounds, and diphenyl Methyl ketone compounds, 9-oxysulfur 𠮿

Series compounds, camphorquinone, halogenated ketones, phosphine oxides and phosphates. Examples of α-ketol-based compounds include 4-(2-hydroxyethoxy)phenyl(2-hydroxy-2-propyl)ketone, α-hydroxy-α,α'-dimethyl styrene Ketones, 2-methyl-2-hydroxypropiophenone and 1-hydroxycyclohexylphenylketone. Examples of acetophenone compounds include methoxyacetophenone, 2,2-dimethoxy-1,2-diphenylethane-1-one, and 2,2-diethoxybenzene Ethyl ketone and 2-methyl-1-[4-(methylthio)-phenyl]-2-𠰌linylpropane-1. As the benzoin ether-based compound, for example, benzoin ethyl ether, benzoin isopropyl ether, and anisin methyl ether are mentioned. Examples of the ketal compound include benzyl dimethyl ketal. As an aromatic sulfonyl chloride compound, 2-naphthalenesulfonyl chloride is mentioned, for example. As a photoactive oxime compound, 1-phenyl-1,2-propanedione-2-(O-ethoxycarbonyl)oxime is mentioned, for example. Examples of the benzophenone-based compound include benzophenone, benzoic acid, and 3,3'-dimethyl-4-methoxybenzophenone. As 9-oxysulfur

Series compounds, for example: 9-oxysulfur

, 2-chloro-9-oxysulfur

, 2-Methyl-9-oxysulfur 𠮿

, 2,4-Dimethyl-9-oxysulfur 𠮿

, Isopropyl-9-oxysulfur 𠮿

, 2,4-Dichloro-9-oxysulfur 𠮿

, 2,4-Diethyl-9-oxysulfur 𠮿

And 2,4-Diisopropyl-9-oxysulfur 𠮿

. The content of the photopolymerization initiator in the radiation curable adhesive in the adhesive layer 22 is, for example, 0.05 to 20 parts by mass relative to 100 parts by mass of the base polymer such as acrylic polymer.

The heating foaming type adhesive used for the adhesive layer 22 is an adhesive containing a component (foaming agent, heat-expandable microspheres, etc.) that is foamed or expanded by heating. As the foaming agent, various inorganic foaming agents and organic foaming agents can be cited. As the heat-expandable microballoon, for example, a microballoon having a structure in which a substance that is easily vaporized and expanded by heating is enclosed in a shell. Examples of the inorganic foaming agent include ammonium carbonate, ammonium hydrogen carbonate, sodium hydrogen carbonate, ammonium nitrite, sodium borohydride, and azides. Examples of organic blowing agents include: chlorofluoroalkanes such as trichloromonofluoromethane or dichloromonofluoromethane, azobisisobutyronitrile, azodimethamide, and barium azodicarboxylate. Hydrazine compounds, p-toluenesulfonyl hydrazine or diphenylsulfonium-3,3'-disulfonyl hydrazine, 4,4'-oxybis(phenylsulfonyl hydrazine), allyl bis(sulfonyl hydrazine), etc. -Based compounds, semicarbazide compounds such as p-tolylsulfonyl semicarbazide or 4,4'-oxybis(benzenesulfonyl semicarbazide), 5-𠰌line-1,2,3,4-sulfur Heterotriazole and other triazole compounds and N,N'-dinitrosopentamethylenetetramine or N,N'-dimethyl-N,N'-dinitroso-p-xylylenedimethamide, etc. N-nitroso compounds. Examples of substances that can be easily vaporized and expanded by heating to form the above-mentioned thermally expandable microspheres include isobutane, propane, and pentane. By enclosing a substance that is easily vaporized and expanded by heating into a shell-forming substance by a coacervation method or an interface polymerization method, the thermally expandable microspheres can be produced. As the shell-forming substance, a substance that exhibits thermal fusion or a substance that can be broken by the thermal expansion of the enclosed substance can be used. Examples of such a substance include vinylidene chloride-acrylonitrile copolymers, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, and polyvinylidene chloride.

As the above-mentioned non-adhesive adhesive, for example, the radiation-curable adhesive described above with respect to the adhesive with lower adhesive force is cured in advance by irradiation of radiation, or a pressure-sensitive adhesive Adhesives, etc. According to the type and content of the polymer component contained in the radiation-curable adhesive, even when the adhesive force is reduced by radiation curing, it can also show the adhesiveness generated by the polymer component, and can be used in specific conditions It can be used to maintain the adhesive force of the adherend. In the adhesive layer 22 of this embodiment, one type of non-adhesive adhesive can be used, or two or more types of non-adhesive adhesives can be used. In addition, the entire adhesive layer 22 may be formed by a non-adhesive adhesive, or a part of the adhesive layer 22 may be formed by a non-adhesive adhesive. For example, when the adhesive layer 22 has a single-layer structure, the entire adhesive layer 22 may be formed of a non-adhesive adhesive, or the adhesive layer 22 may be formed of a non-adhesive adhesive as described above. For specific parts (for example, the bonding target area of the ring frame and the area outside the bonding target area of the wafer), other parts are formed by the adhesive that can reduce the adhesive force (for example, as the bonding of the wafer) The central area of the target area). In addition, when the adhesive layer 22 has a multi-layer structure, all layers of the multi-layer structure may be formed by a non-adhesive adhesive, or part of the multilayer structure may be formed by a non-adhesive adhesive.

On the other hand, as the pressure-sensitive adhesive used for the adhesive layer 22, for example, an acrylic adhesive or a rubber adhesive using an acrylic polymer as a base polymer can be used. When the adhesive layer 22 contains an acrylic adhesive as a pressure-sensitive adhesive, the acrylic polymer as the base polymer of the acrylic adhesive preferably contains (meth)acrylic acid in a mass ratio. The ester has the most monomer units. As such an acrylic polymer, for example, the acrylic polymer described above with respect to the radiation curable adhesive can be cited.

In addition to the above-mentioned components, the adhesive layer 22 or the adhesive used to form it may also contain a crosslinking accelerator, an adhesion imparting agent, an anti-aging agent, a coloring agent such as a pigment or a dye, and the like. The colorant may be a compound that is colored by radiation. Examples of such compounds include leuco dyes.

The thickness of the adhesive layer 22 is preferably 1-50 μm, more preferably 2-30 μm, and still more preferably 5-25 μm. Such a configuration is suitable, for example, in the following aspects: when the adhesive layer 22 contains a radiation-curable adhesive, the adhesive layer 22 has a balance of the adhesive force of the adhesive layer 22 to the adhesive film 10 before and after radiation curing.

The dicing tape 20 has a disk shape with a diameter D _{3 that} is concentric with the disk shape of the above-mentioned mucous film 10. When the dicing die bonding film X is designed as an 8-inch wafer corresponding type, the diameter D _{3 of the} dicing tape 20 is, for example, 255～280 mm, and the dicing die bonding film X corresponds to a 12-inch wafer In the case of type design, the diameter D _{3 of the} dicing tape 20 is, for example, 360-380 mm.

Regarding the dicing tape 20, the dicing tape test piece with a width of 10 mm that is extended to 120 mm between the chucks under the conditions of an initial distance of 100 mm between the chucks at 23°C and a stretching speed of 1000 mm/min is heated at the heating temperature The heat shrinkage rate in a heat treatment test conducted under the conditions of 100°C and a heating time of 10 seconds is preferably 0.1% or more, more preferably 0.2% or more, more preferably 0.5% or more, more preferably 0.6% or more, more preferably It is 0.7% or more, more preferably 1% or more, and even more preferably 1.5% or more. For the elongation of the diced tape test piece, for example, a tensile tester (trade name "Autograph AG-X", manufactured by Shimadzu Corporation) can be used. The thermal shrinkage rate can be adjusted by adjusting the ratio of the resin having a higher thermal shrinkage rate in the material forming the substrate 21 of the dicing tape 20. For example, in the substrate 21 with a single-layer structure, the thermal shrinkage rate of the dicing tape 20 can be increased by increasing the ratio of the resin with a higher thermal shrinkage rate in the substrate constituent material. In the multi-layer structure of the substrate 21, since the multi-layer structure of the substrate 21 contains a layer containing a resin with a relatively high thermal shrinkage rate, the thermal shrinkage rate of the dicing tape 20 can be increased.

Regarding the dicing tape 20, the elongation at break in the tensile test of the dicing tape 20 test piece with a width of 10 mm under the conditions of an initial distance between the chucks of 50 mm, -15°C and a tensile speed of 300 mm/min It is 120% or more, preferably 150% or more, more preferably 200% or more, and even more preferably 250% or more. The elongation at break can be measured using a tensile tester (trade name "Autograph AG-X", manufactured by Shimadzu Corporation). In addition, the elongation at break of the dicing tape 20 can be adjusted by adjusting the ratio of the resin that is easy to elongate in the material forming the substrate 21 of the dicing tape 20. For example, in the substrate 21 with a single layer structure, the elongation at break of the dicing tape 20 can be increased by increasing the blending ratio of the resin that is easy to extend in the substrate constituent material. In the multi-layer structure of the substrate 21, since the multi-layer structure of the substrate 21 contains a layer containing a resin that is easy to elongate, the elongation at break of the dicing tape 20 can be increased.

The diced die sticking film X having the above-mentioned structure can be manufactured, for example, as follows.

In the production of the adhesive film 10 of the chip adhesive film X, first, after preparing the adhesive composition for the formation of the adhesive film 10, the composition is coated on a specific spacer to form the adhesive composition layer . Examples of separators include: polyethylene terephthalate (PET) film, polyethylene film, polypropylene film, and surface treatment with a fluorine-based release agent or a long-chain alkyl acrylate-based release agent. Coated plastic film or paper, etc. Examples of the coating method of the adhesive composition include roll coating, screen coating, and gravure coating. Secondly, in the adhesive composition layer, by heating, it is dried if necessary, and a crosslinking reaction is generated if necessary. The heating temperature is, for example, 70 to 160°C, and the heating time is, for example, 1 to 5 minutes. As described above, the above-mentioned die attach film 10 can be manufactured in a form with a spacer attached.

Regarding the dicing tape 20 of the dicing die bonding film X, an adhesive layer 22 is provided on the substrate 21 to be prepared. For example, the base material 21 made of resin can be formed by calendering film method, casting method in organic solvent, inflation extrusion method in closed system, T-die extrusion method, co-extrusion method, dry lamination method Manufactured by other film forming methods. If necessary, a specific surface treatment is performed on the film or substrate 21 after film formation. In the formation of the adhesive layer 22, for example, after the adhesive composition for forming the adhesive layer is prepared, first, the composition is coated on the substrate 21 or a specific spacer to form the adhesive composition layer . Examples of the coating method of the adhesive composition include roll coating, screen coating, and gravure coating. Secondly, in the adhesive composition layer, by heating, it is dried if necessary, and a crosslinking reaction is generated if necessary. The heating temperature is, for example, 80 to 150°C, and the heating time is, for example, 0.5 to 5 minutes. When the adhesive layer 22 is formed on the spacer, the adhesive layer 22 with the spacer is attached to the base 21, and then the spacer is peeled off. In this way, the dicing tape 20 having a laminated structure of the base material 21 and the adhesive layer 22 is produced.

In the production of the chip adhesive film X, secondly, the adhesive film 10 is crimped and attached to the adhesive layer 22 side of the chip tape 20, for example. The bonding temperature is, for example, 30 to 50°C, preferably 35 to 45°C. The bonding pressure (line pressure) is, for example, 0.1 to 20 kgf/cm, and preferably 1 to 10 kgf/cm. When the adhesive layer 22 contains the radiation-curable adhesive as described above, the adhesive layer 22 may be irradiated with radiation such as ultraviolet rays before the bonding, or the adhesive may be applied from the substrate 21 side after the bonding The layer 22 is irradiated with radiation such as ultraviolet rays. Alternatively, during the manufacturing process of the chip adhesive film X, such radiation irradiation may not be performed (in this case, the adhesive layer 22 can be radiation hardened during the use of the chip adhesive film X). When the adhesive layer 22 is an ultraviolet-curable adhesive layer, the amount of ultraviolet radiation used to harden the adhesive layer 22 is, for example, 50-500 mJ/cm ² , preferably 100-300 mJ/cm ² . The irradiated area (irradiation area R) as a measure for reducing the adhesive force of the adhesive layer 22 in the chip adhesive film X is, for example, as shown in FIG. 1, which is within the adhesive film bonding area in the adhesive layer 22 Except the area other than the periphery.

The dicing die sticking film X can be produced in the above manner. A spacer (not shown) can be provided on the die bonding film X on the side of the die bonding film 10 in a form that at least covers the die bonding film 10. The spacer is used to protect the device in such a way that at least the adhesive film 10 or the adhesive layer 22 is not exposed, and is peeled from the film when the chip adhesive film X is used.

2 to FIG. 7 show a method of manufacturing a semiconductor device using the diced die bonding film X as described above.

In this semiconductor device manufacturing method, first, as shown in FIG. 2(a) and FIG. 2(b), a modified region 30a is formed on the semiconductor wafer W. The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) have been fabricated on the first surface Wa side of the semiconductor wafer W, and wiring structures (not shown) required for the semiconductor elements have been formed on the first surface Wa. In this step, after bonding the wafer processing tape T1 with the adhesive surface T1a to the first surface Wa side of the semiconductor wafer W, the semiconductor wafer W is held by the wafer processing tape T1. The semiconductor wafer W is irradiated from the opposite side of the wafer processing tape T1 along the predetermined dividing line of the laser light so that the condensing point is aligned with the laser light inside the wafer, and is formed in the semiconductor wafer W by ablation using multiphoton absorption Modification area 30a. The modified area 30a is used to separate the semiconductor wafer W into a weakened area of the semiconductor chip unit. The method of forming the modified region 30a on the planned dividing line in the semiconductor wafer by laser light irradiation is described in detail in, for example, Japanese Patent Laid-Open No. 2002-192370, but the laser light irradiation conditions of this embodiment For example, adjust appropriately within the following conditions. <Laser light irradiation conditions> (A) Laser light Laser light source Semiconductor laser excitation Nd: YAG laser wavelength 1064 nm Laser spot cross-sectional area 3.14×10 ^-8 cm ² Oscillation form Q-switch pulse repetition frequency pulse width below 100 kHz 1 μs or less, output laser light quality of 1 mJ or less TEM00 Polarization characteristic linear polarization (B) Condensing lens magnification of 100 times or less NA 0.55 Transmittance of laser light wavelength below 100% (C) of the mounting table for placing semiconductor substrates Moving speed 280 mm/sec or less

Next, while the semiconductor wafer W is held by the wafer processing tape T1, the semiconductor wafer W is ground from the second surface Wb to make it thin to a specific thickness, as shown in Figure 2(c) As shown, a semiconductor wafer 30A that can be singulated into a plurality of semiconductor wafers 31 is formed (wafer thinning step). The grinding process can be performed using a grinding process device equipped with a grinding stone.

Next, as shown in FIG. 3(a), the semiconductor wafer 30A held by the wafer processing tape T1 is bonded to the die bonding film 10 of the dicing die bonding film X or its wafer bonding area 10A. Thereafter, as shown in FIG. 3(b), the wafer processing tape T1 is peeled from the semiconductor wafer 30A. When the adhesive layer 22 of the dicing die bonding film X is a radiation-curable adhesive layer, after the semiconductor wafer 30A is attached to the die bonding film 10, the adhesive layer 22 can be irradiated with ultraviolet rays from the substrate 21 side Iso-radiation, instead of the above-mentioned radiation exposure in the manufacturing process of the chip adhesive film X. The irradiation amount is, for example, 50 to 500 mJ/cm ² , preferably 100 to 300 mJ/cm ² . The area (irradiated area R shown in FIG. 1) that is irradiated in the chip adhesive film X as a measure for reducing the adhesive force of the adhesive layer 22 is, for example, the removal of the adhesive layer 22 in the adhesion area of the adhesive film 10 The area other than the periphery.

Next, after attaching the ring frame 41 to the die bonding film 10 of the dicing die bonding film X, as shown in FIG. 4(a), the die dicing die bonding film X with the semiconductor wafer 30A is fixed to the expansion device之keeper42.

Next, as shown in FIG. 4(b), the first expansion step (cold expansion step) is performed under relatively low temperature conditions, and the semiconductor wafer 30A is singulated into a plurality of semiconductor wafers 31, and the dicing die is bonded to the film The die bond film 10 of X is cut into small pieces of die bond film 11 to obtain a semiconductor chip 31 with die bond film attached. In this step, the hollow cylindrical jacking member 43 of the expansion device is brought into contact with the dicing tape 20 on the lower side of the die-cutting die-bonding film X in the figure and raised to bond the semiconductor wafer The dicing tape 20 of the dicing die bonding film X of 30A expands in a two-dimensional direction including the radial and circumferential directions of the semiconductor wafer 30A. The expansion is performed under the condition that a tensile stress of, for example, 15-32 MPa is generated in the dicing tape 20. The temperature condition of the cold expansion step is, for example, below 0°C, preferably -20 to -5°C, more preferably -15 to -5°C, and more preferably -15°C. The expansion speed of the cold expansion step (the rising speed of the jacking member 43) is, for example, 1 to 400 mm/sec. In addition, the expansion amount of the cold expansion step is 3-16 mm, for example. The conditions related to the expansion in the cold expansion step are also the same in the following cold expansion step.

Through this cold expansion step, the die bond film 10 of the die die bond film X is cut into small pieces of the die bond film 11 to obtain the semiconductor chip 31 with the die bond film attached. Specifically, in this step, a crack is formed in the fragile modified region 30a in the semiconductor wafer 30A, and the semiconductor wafer 31 is singulated. In addition, in this step, in the die bond film 10 that is in close contact with the adhesive layer 22 of the expanded dicing tape 20, the deformation in the regions where the semiconductor wafers 31 of the semiconductor wafer 30A are in close contact is suppressed, and another On the other hand, the tensile stress generated by the dicing tape 20 plays a role in the part opposite to the crack formation part of the wafer, in a state where such deformation suppression effect is not produced. As a result, in the die attach film 10, the part facing the crack formation part between the semiconductor wafer 31 is cut. After this step, as shown in FIG. 4(c), the lifting member 43 is lowered to release the expanded state of the dicing tape 20.

Next, as shown in FIGS. 5(a) and 5(b), a second expansion step under relatively high temperature conditions is performed to expand the distance (separation distance) between the semiconductor wafers 31 with the die attach film. In this step, the workbench 44 of the expanding device is raised, and the dicing tape 20 of the dicing die sticking film X is expanded. The worktable 44 is capable of vacuum sucking the work piece on the worktable by applying negative pressure. The temperature condition of the second expansion step is, for example, 10°C or higher, preferably 15-30°C. The expansion speed of the second expansion step (the speed at which the table 44 rises) is, for example, 0.1-10 mm/sec. In addition, the amount of expansion in the second expansion step is, for example, 3-16 mm. In this step, the separation distance of the semiconductor wafer 31 with the die-attach film is widened to the extent that the semiconductor wafer 31 with the die-attach film can be picked up from the dicing tape 20 in the following pickup step. After the crystal cutting tape 20 is expanded by the rising of the worktable 44, the worktable 44 vacuum sucks the crystal cutting tape 20. In addition, while maintaining the suction state by the table 44, as shown in FIG. 5(c), the table 44 descends along with the workpiece. In this embodiment, in this state, the periphery of the semiconductor wafer 30A (the portion outside the holding area of the semiconductor wafer 31) of the dicing die bonding film X is heated to shrink it (heat shrinking step). After that, the vacuum suction state by the table 44 is released. By passing through the heat shrinking step, in the die-cut wafer X, it becomes a state where a certain degree of tension can be applied to the wafer bonding area temporarily relaxed by the first expansion step or the second expansion step. Even after the vacuum suction state is released, the separation distance of the semiconductor wafer 31 can be fixed.

In the manufacturing method of the semiconductor device, after the first expansion step, the dicing die bonding film X can be expanded around the semiconductor wafer 30A (the part outside the holding area of the semiconductor wafer 31) without further expansion of the die bonding film X Heat to shrink it. Through this heat shrinking step, in the dicing die bonding film X, a certain degree of tension can be applied to the wafer bonding area that is stretched and temporarily relaxed by the above-mentioned first expansion step, so that a certain degree of tension is applied between the semiconductor wafers 31 Ensure the desired separation distance.

Secondly, if necessary, after a cleaning step of cleaning the semiconductor wafer 31 side of the dicing tape 20 of the semiconductor wafer 31 attached with the die attach film using a cleaning solution such as water, as shown in FIG. 6, the die attach film will be attached The semiconductor wafer 31 is picked up from the dicing tape 20 (picking step). For example, on the lower side of the dicing tape 20 in the figure, the ejector pin member 45 of the pickup mechanism is raised to lift up the semiconductor wafer 31 with the die-attach film to be picked up via the dicing tape 20, and then it is cured by suction With 46 for adsorption and retention. In the picking step, the jacking speed of the ejector pin member 45 is, for example, 1-100 mm/sec, and the jacking amount of the ejector pin member 45 is, for example, 50-3000 μm.

Next, as shown in FIG. 7(a), the picked up semiconductor wafer 31 with a die attach film is temporarily fixed to a specific adherend 51 via the die attach film 11. Examples of the adherend 51 include a lead frame, a TAB (Tape Automated Bonding) film, and a wiring board.

Next, as shown in FIG. 7(b), the electrode pads (not shown) of the semiconductor chip 31 and the terminal portions (not shown) of the adherend 51 are electrically connected via bonding wires 52 (wire bonding step ). The connection between the electrode pad of the semiconductor chip 31 or the terminal portion of the adherend 51 and the bonding wire 52 is realized by ultrasonic welding accompanied by heating, and is performed in a manner that does not thermally harden the die attach film 11. As the bonding wire 52, for example, a gold wire, an aluminum wire, or a copper wire can be used. The wire heating temperature for wire bonding is, for example, 80 to 250°C. In addition, the heating time is several seconds to several minutes.

Next, as shown in FIG. 7(c), the semiconductor wafer 31 is sealed by the sealing resin 53 for protecting the semiconductor wafer 31 or the bonding wire 52 on the adherend 51 (sealing step). In this step, the mucosal film 11 is thermally cured. In this step, the sealing resin 53 is formed by, for example, a transfer molding technique using a mold. As a constituent material of the sealing resin 53, for example, epoxy resin can be used. In this step, the heating temperature for forming the sealing resin 53 is, for example, 165 to 185° C., and the heating time is, for example, 60 seconds to several minutes. When the curing of the sealing resin 53 in this step (sealing step) is not sufficiently performed, a curing step for completely curing the sealing resin 53 is performed after this step. Even when the adhesive film 11 is not completely thermally cured in the sealing step, the adhesive film 11 can be completely thermally cured together with the sealing resin 53 in the post-curing step. In the post-curing step, the heating temperature is, for example, 165 to 185°C, and the heating time is, for example, 0.5 to 8 hours.

The semiconductor device can be manufactured in the above manner.

In the semiconductor device manufacturing method of the present invention, the semiconductor wafer 30B produced as follows can be attached to the dicing die bonding film X instead of the above-mentioned structure of attaching the semiconductor wafer 30A to the dicing die bonding film X.

In the production of the semiconductor wafer 30B, first, as shown in FIGS. 8(a) and 8(b), a dividing groove 30b is formed on the semiconductor wafer W (a dividing groove forming step). The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) have been fabricated on the side of the first surface Wa of the semiconductor wafer W, and wiring structures required for the semiconductor elements (not shown) have been formed on the first surface Wa. In this step, after bonding the wafer processing tape T2 with the adhesive surface T2a to the second surface Wb side of the semiconductor wafer W, use it with the semiconductor wafer W held by the wafer processing tape T1 The rotary cutter of a dicing device or the like forms a dividing groove 30b of a specific depth on the side of the first surface Wa of the semiconductor wafer W. The dividing groove 30b is used to divide the semiconductor wafer W into gaps of semiconductor chip units (the dividing groove 30b is schematically represented by a thick solid line in the drawing).

Next, as shown in FIG. 8(c), attach the wafer processing tape T3 with the adhesive surface T3a to the first surface Wa side of the semiconductor wafer W, and the wafer processing tape T2 from the semiconductor wafer W之 stripping.

Next, as shown in FIG. 8(d), while the semiconductor wafer W is held by the wafer processing tape T3, the semiconductor wafer W is thinned to a specific thickness by grinding the semiconductor wafer W from the second surface Wb. Thickness (wafer thinning step). Through this wafer thinning step, a semiconductor wafer 30B that can be singulated into a plurality of semiconductor wafers 31 is formed in this embodiment. As the semiconductor wafer 30B, specifically, the wafer has a portion (connecting portion) where the portions singulated into a plurality of semiconductor wafers 31 are connected on the second surface Wb side. The thickness of the connecting portion of the semiconductor wafer 30B, that is, the distance between the second surface Wb of the semiconductor wafer 30B and the end of the second surface Wb of the dividing groove 30b is, for example, 1-30 μm, preferably 3-20 μm . The semiconductor wafer 30B produced in this way can be used instead of the semiconductor wafer 30A to be attached to the dicing die bonding film X, and then the above steps can be performed with reference to FIGS. 3 to 7.

9(a) and 9(b) specifically show the first expansion step (cold expansion step) performed after the semiconductor wafer 30B is attached to the die bonding film X. In this step, the hollow cylindrical jacking member 43 of the expansion device is brought into contact with the dicing tape 20 on the lower side of the die-cutting die-bonding film X in the figure and raised to bond the semiconductor wafer The dicing tape 20 of the dicing die bonding film X of 30B is stretched in a two-dimensional direction including the radial and circumferential directions of the semiconductor wafer 30B. Through this cold expansion step, the thin-walled and easy-to-break part of the semiconductor wafer 30B is severed and singulated into the semiconductor wafer 31. In addition, in this step, in the die bond film 10 that is in close contact with the adhesive layer 22 of the expanded dicing tape 20, the deformation in the regions where the semiconductor wafers 31 are in close contact is suppressed. In the area where the dividing grooves between the wafers 31 are opposed to each other, the tensile stress generated by the dicing tape 20 acts in a state where such deformation suppression effect is not produced. As a result, in the die-attach film 10, the part facing the dividing groove between the semiconductor wafer 31 is cut. The thus obtained semiconductor wafer 31 with die attach film passes through the above-mentioned pickup step with reference to FIG. 6, and then is supplied to the mounting step in the semiconductor device manufacturing process.

In this semiconductor device manufacturing method, the wafer thinning step shown in FIG. 10 can be performed instead of the above-mentioned wafer thinning step with reference to FIG. 8(d). 8(c) after the above-mentioned process, in the wafer thinning step shown in FIG. 10, in the state where the semiconductor wafer W is held by the wafer processing tape T3, The two sides Wb are ground and thinned to a specific thickness to form a semiconductor wafer divided body 30C including a plurality of semiconductor wafers 31 and held by the wafer processing tape T3. In this step, the method of grinding the wafer until the dividing groove 30b itself is exposed on the second surface Wb side (the first method) can be used, or the following method: the wafer is ground from the second surface Wb side Until the dividing groove 30b is about to be reached, the pressing force of the spin grindstone on the wafer causes a crack between the dividing groove 30b and the second surface Wb to form a semiconductor wafer dividing body 30C (second method ). According to the method used, the depth of the dividing groove 30b formed as described above with reference to FIGS. 8(a) and 8(b) from the first surface Wa is appropriately determined. In FIG. 10, the dividing groove 30b passing through the first method or the dividing groove 30b passing through the second method and the cracks connected to it are represented by a thick solid line pattern. The semiconductor wafer split body 30C thus produced can replace the semiconductor wafer 30A or the semiconductor wafer 30B after being attached to the dicing die bonding film X, and then the above steps can be performed with reference to FIGS. 3 to 7.

11(a) and 11(b) specifically show the first expansion step (cold expansion step) performed after the semiconductor wafer divided body 30C is attached to the dicing die bonding film X. In this step, the hollow cylindrical jacking member 43 of the expansion device is brought into contact with the dicing tape 20 on the lower side of the die-cutting die-bonding film X in the figure and raised to bond the semiconductor wafer The dicing tape 20 of the dicing die bonding film X of 30B is stretched in a two-dimensional direction including the radial and circumferential directions of the semiconductor wafer 30B. By this cold expansion step, in the die bond film 10 that is in close contact with the adhesive layer 22 of the expanded dicing tape 20, the deformation in the regions where the semiconductor chips 31 of the semiconductor wafer 30B are in close contact is suppressed, and On the one hand, in a portion facing the dividing groove 30b between the semiconductor wafer 31, the tensile stress generated by the dicing tape 20 acts in a state where such deformation suppression effect is not produced. As a result, in the die-attach film 10, the part facing the dividing groove 30b between the semiconductor wafer 31 is cut. The thus obtained semiconductor wafer 31 with die attach film passes through the above-mentioned pickup step with reference to FIG. 6, and then is supplied to the mounting step in the semiconductor device manufacturing process.

The inventors have found that, for example, for the mucous film 10 in the diced die-bonding film X that can be used in the manufacturing process of the semiconductor device as described above, the test piece of the mucous film with a width of 10 mm and a thickness of 210 μm is The initial chuck distance is 20 mm, the elongation at break in the tensile test under the conditions of -15°C and a tensile speed of 100 mm/min is 20% or less. The above configuration is suitable for making the adhesive in the expansion step for cutting. The crystal film 10 is cut at a predetermined portion thereof. For example, as shown in the following Examples and Comparative Examples. With regard to the above-mentioned configuration of the elongation at break in the above-mentioned tensile test of the mucosal film 10, the elongation at break is 20% or less. The sticky film 10 is broken due to ductile failure or the like. From the viewpoint of ensuring good severability in the expansion step for severing the mucous film 10, the elongation at break in the above-mentioned tensile test for the mucous film 10 is preferably 18% or less, more preferably 15% or less .

The wafer cutting tape 20 of the wafer sticking film X is as described above, and the wafer cutting tape test piece with a width of 10 mm is performed under the conditions of an initial distance of 50 mm between the chucks, -15°C and a stretching speed of 300 mm/min. The elongation at break in the tensile test is over 120%. This structure is suitable for preventing the dicing tape from breaking during the expansion step subjected to stretching. In order to prevent the dicing tape from breaking during the expansion step subjected to stretching, the elongation at break of the dicing tape is preferably 150% or more, more preferably 200% or more, and more preferably 250% or more.

In addition, for the die bond film 10 that becomes a component of the die bond film X, the diameter D ₁ of the die bond film 10 and the diameter D ₂ of the wafer bonding area as a part of the die bond film 10 ( ＜D ₁ ) The above-mentioned configuration satisfying (D ₁ －D ₂ )/D ₂ ＜0.1 is suitable for the in-plane direction or radial direction of the tangent mucosal film X of a specific size, and suppresses the mucosal film 10 relative to the workpiece. The semiconductor wafer becomes too large, so it is suitable to ensure that there is a sufficiently spacious dicing zone area around the die bond film 10 that is not covered by the film. The chip dicing tape 20 including the substrate 21 and the adhesive layer 22 has a tendency to shrink by heating more than the chip film 10. Therefore, the above-mentioned configuration suitable for ensuring that there is a sufficiently spacious dicing zone area around the chipping film 10 that is not covered by the film in the chipping chip mucous film X is suitable for making the chipping chipping film The semiconductor wafers of X are fully heated and contracted. Therefore, it is suitable for applying sufficient tension to the wafer bonding area inside the heated part of the chip adhesive film X to ensure sufficient slit width between the semiconductor wafers on the film . From the viewpoint of ensuring a sufficient kerf width between the semiconductor wafers on the dicing die bonding film X in the heat shrinking step, the value of (D _1- D ₂ )/D ₂ is preferably 0.7 or less, more preferably 0.5 or less.

As described above, the chip adhesive film X is suitable for achieving good slicing in the expansion step for slicing, and ensures a sufficient kerf width for the slicing part between the wafers.

In the wafer stick film X, regarding the wafer tape 20, as described above, the initial distance between the chucks is 100 mm, 23°C, and the stretching speed is 1000 mm/min, and it is stretched until the distance between the chucks is 120 mm. The heat shrinkage rate in the heat treatment test of the dicing tape 20 test piece with a width of 10 mm at a heating temperature of 100°C and a heating time of 10 seconds is preferably 0.1% or more, more preferably 0.2% or more, more preferably It is 0.5% or more, more preferably 0.6% or more, more preferably 0.7% or more, still more preferably 1% or more, still more preferably 1.5% or more. This configuration is suitable for fully heating and shrinking the surrounding semiconductor wafer of the chip adhesive film X in the above heat shrinking step. Therefore, it is suitable for the wafer bonding area inside the heating part of the chip adhesive film X A sufficient tension is applied to ensure a sufficient slit width between the semiconductor wafers 31 on the film. [Example]

[Example 1] <Preparation of adhesive film> Acrylic resin A ₁ (trade name "Teisan Resin SG-P3", weight average molecular weight of 850,000, glass transition temperature Tg of 12°C), manufactured by Nagase chemteX Co., Ltd. ) 100 parts by mass, 12 parts by mass of phenol resin (trade name "MEHC-7851SS", manufactured by Minghe Chemical Co., Ltd.), and inorganic filler (trade name "SO-25R", silica, with an average particle size of 500 nm, 100 parts by mass of Admatechs Co., Ltd.) was added to methyl ethyl ketone and mixed to obtain an adhesive composition with a solid content concentration of 20% by mass. Next, using an applicator, apply the adhesive composition on the silicone release treatment surface of the PET separator (thickness 50 μm) on which the silicone release treatment is applied to form the adhesive composition layer. Next, the composition layer was heated and dried at 130° C. for 2 minutes, and the adhesive film (DAF) of Example 1 with a thickness of 30 μm was formed on the PET separator. The composition of the mucous film in Example 1 and the following examples and comparative examples is disclosed in Table 1 (in Table 1, the unit of each value representing the composition of the mucous film is the relative "mass part" in the composition ").

<Production of the crystal cutting belt> In a reaction vessel equipped with a condenser, a nitrogen introduction tube, a thermometer, and a stirring device, 100 parts by mass of 2-ethylhexyl acrylate and 19 parts by mass of 2-hydroxyethyl acrylate are contained as polymerization A mixture of 0.4 parts by mass of benzyl peroxide as a starting agent and 80 parts by mass of toluene as a polymerization solvent was stirred at 60° C. in a nitrogen atmosphere for 10 hours (polymerization reaction). Thus, a polymer solution containing acrylic polymer P ₁ is obtained. Next, a mixture containing the polymer solution containing the acrylic polymer P ₁ , 2-methacryloxyethyl isocyanate (MOI), and dibutyltin dilaurate as an addition reaction catalyst, Stir at 50°C in air for 60 hours (addition reaction). To the reaction solution, the formulation amount of the MOI with respect to the acrylic polymer P ₁₁₀₀ parts by mass of 1.3 parts by mass, the blending amount of di-butyl tin acrylic polymer P with respect to ₁₁₀₀ parts by mass 0.5 parts by mass of . By this addition reaction, a polymer solution containing the acrylic polymer P ₂ having a methacrylate group in the side chain is obtained. Next, in the polymer solution, 1.3 parts by mass of polyisocyanate compound (trade name "Coronate L", manufactured by Tosoh Co., Ltd.) and 3 parts by mass of photopolymerization were added to 100 parts by mass of acrylic polymer P ₂ The initiator (trade name "Irgacure 184", manufactured by BASF Corporation) was mixed to obtain an adhesive composition. Next, using an applicator, apply the adhesive composition on the silicone release treatment surface of the PET separator (thickness 50 μm) with the silicone release treatment surface to form an adhesive composition layer. Next, heat and dry the composition layer at 120° C. for 2 minutes to form an adhesive layer with a thickness of 10 μm on the PET separator. Next, using a laminating machine, a polyolefin base material S ₁ (trade name "Funcrare NED #125", thickness 125 μm, manufactured by Gunze Co., Ltd.) is bonded to the exposed surface of the adhesive layer at room temperature. The dicing tape (DT) of Example 1 was produced as described above.

<Production of the crystal-cut chip adhesive film> The above-mentioned chip adhesive film of Example 1 with a PET spacer was punched into a disc shape with a diameter of 312 mm. Secondly, after peeling the PET separator from the adhesive film and peeling the PET separator from the above-mentioned dicing tape, use a roller laminator to bond the adhesive layer exposed in the dicing tape with the PET separator in the adhesive crystal film It peels and reveals the face. In this bonding, the bonding speed is 10 mm/min, the temperature condition is 23°C, and the pressure condition is 0.15 MPa. Secondly, the dicing tape adhered to the mucous film is punched into a disc shape with a diameter of 390 mm in such a way that the center of the dicing tape is consistent with the center of the mucous film. Secondly, the adhesive layer of the dicing tape is irradiated with ultraviolet rays from the EVA substrate side. In the ultraviolet irradiation, a high-pressure mercury lamp is used, and the cumulative light intensity of the irradiation is 300 mJ/cm ² . In the above manner, the dicing die-cutting film of Example 1 having a laminated structure including the die-cutting tape and the die-cutting film was produced.

[Example 2] Except that the diameter of the die-cutting film was set to 315 μm instead of 312 μm, the die-cutting die-cut film of Example 2 was produced in the same manner as the die-cutting die film of Example 1.

[Example 3] Except that the diameter of the die-cutting film was set to 320 μm instead of 312 μm, the die-cutting die-cutting film of Example 3 was produced in the same manner as the die-cutting die-cutting film of Example 1.

[Example 4] <Preparation of the sticky film> Acrylic resin A ₂ (trade name "Teisan Resin SG-70L", weight average molecular weight of 900,000, and glass transition temperature Tg of -13°C, Nagase chemteX Co., Ltd. Manufacturing) 100 parts by mass, 210 parts by mass of phenol resin (trade name "MEHC-7851SS", manufactured by Minghe Chemical Co., Ltd.), and 52 parts by mass of epoxy resin E ₁ (trade name "JER1010", manufactured by Mitsubishi Chemical Co., Ltd.) , Epoxy resin E ₂ (trade name "JER828", manufactured by Mitsubishi Chemical Co., Ltd.) 140 parts by mass, hardening accelerator (trade name "2PHZ-PW", Shikoku Chemical Industry Co., Ltd.) 3 parts by mass, and inorganic 350 parts by mass of filler (trade name "SO-25R", silica, average particle size of 500 nm, manufactured by Admatechs Co., Ltd.) was added to methyl ethyl ketone and mixed to obtain a solid content concentration of 35% by mass Adhesive composition. Next, using an applicator, apply the adhesive composition on the silicone release treatment surface of the PET separator (thickness 50 μm) with the silicone release treatment surface to form the adhesive composition layer . Next, the composition layer was heated and dried at 130° C. for 2 minutes, and the mucous film of Example 4 with a thickness of 30 μm was formed on the PET separator.

＜Production of slicing and sticking film＞ The above-mentioned die-cutting die-cutting of the above-mentioned die-bonding film of Example 4 with a PET spacer was processed into a disc shape with a diameter of 320 mm. Except that the chip adhesive film was used instead of the chip adhesive film (diameter 312 μm) of Example 1, the chip adhesive film of Example 4 was produced in the same manner as the chip chip adhesive film of Example 1.

[Example 5] In addition to using other polyolefin base material S ₂ (trade name "ODZ-IVS", thickness 80 μm, manufactured by Okura Industrial Co., Ltd.) instead of polyolefin base material S ₁ (trade name "Funcrare") Except NED#125", manufactured by Gunze Co., Ltd.), the dicing tape of Example 5 was produced in the same manner as the dicing tape of Example 1. And, except that the dicing tape of Example 5 is used instead of the dicing tape of Example 1, and the diameter of the die-cutting die-cut die-shaped die-cutting film is set to 320 μm instead of 312 μm, the same as that of Example 1 In the same manner as the dicing chip adhesive film, the chip dicing chip adhesive film of Example 5 was produced.

[Example 6] <Production of dicing tape> In addition to using other polyolefin base material S ₃ (thickness 100 μm) instead of polyolefin base material S ₁ (trade name "Funcrare NED #125", Gunze Co., Ltd. The dicing tape of Example 6 was produced in the same manner as the dicing tape of Example 1 except that it was manufactured by the company). The substrate S ₃ based polyolefin prepared in the following manner. First, put the low-density polyethylene (trade name "SUMIKATHENE F213-P", manufactured by Sumitomo Chemical Co., Ltd.) as a raw material into an extruder (trade name "GM30-28" with a screw diameter of 30 mm and an effective screw length ( L/D) is 28, manufactured by GM Engineering Co., Ltd.), using this extruder and a split-flow T die, the film is formed by the T die melt co-extrusion method to obtain a film (extrusion temperature 240°C) ). Next, embossing is performed on one side of the obtained film (surface roughness Ra is 1.42 μm) to obtain a 100 μm thick film with embossing on one side. Next, corona treatment is applied to the surface opposite to the embossed surface of the film. The substrate S ₃ used for the dicing tape of Example 6 was prepared as described above.

＜Production of slicing and sticking film＞ Except that the dicing tape of Example 6 was used instead of the dicing tape of Example 1, and the diameter of the die-cutting die-cut die-cutting film was set to 320 μm instead of 312 μm, the same as that of Example 1 The chip adhesive film of Example 6 was produced in the same manner as the chip adhesive film.

[Example 7] In addition to using other polyolefin base material S ₄ (trade name "DDZ#150", thickness 150 μm, manufactured by Gunze Co., Ltd.) instead of polyolefin base material S ₁ (trade name "Funcrare NED") Except for #125", manufactured by Gunze Co., Ltd.), the dicing tape of Example 7 was produced in the same manner as the dicing tape of Example 1. And, except that the dicing tape of Example 7 was used instead of the dicing tape of Example 1, and the diameter of the die-cutting die-cut die-shaped die-cutting film was set to 320 μm instead of 312 μm, the same as that of Example 1 In the same manner as the dicing chip adhesive film, the chip dicing chip adhesive film of Example 7 was produced.

[Comparative Example 1] Except that the diameter of the chip adhesive film was set to 330 μm instead of 312 μm, the chip adhesive film of Comparative Example 1 was produced in the same manner as the chip adhesive film of Example 1.

[Comparative example 2] <Preparation of the adhesive film> Acrylic resin A ₁ (trade name "Teisan Resin SG-P3", weight average molecular weight of 900,000, and glass transition temperature Tg of 12°C), manufactured by Nagase chemteX Co., Ltd. ) 100 parts by mass, 6 parts by mass of phenol resin (trade name "MEHC-7851SS", manufactured by Minghe Chemical Co., Ltd.), and inorganic filler (trade name "SO-25R", silica, with an average particle size of 500 nm, (Admatechs Co., Ltd.) 50 parts by mass was added to methyl ethyl ketone and mixed to obtain an adhesive composition with a solid content concentration of 20% by mass. Next, using an applicator, apply the adhesive composition on the silicone release treatment surface of the PET separator (thickness 50 μm) with the silicone release treatment surface to form the adhesive composition layer . Next, the composition layer was heated and dried at 130°C for 2 minutes, and a mucous film of Comparative Example 2 with a thickness of 30 μm was formed on the PET separator.

＜Production of slicing and sticking film＞ The above-mentioned die-cutting die-cutting of the above-mentioned die-cutting film of Comparative Example 2 with a PET separator was 320 mm in diameter. Except that the chip adhesive film was used instead of the chip adhesive film (diameter 312 μm) of Example 1, the chip adhesive film of Comparative Example 2 was produced in the same manner as the chip chip adhesive film of Example 1.

[Comparative Example 3] In addition to using other polyolefin base material S ₅ (trade name "NSO", thickness 100 μm, manufactured by Okura Industrial Co., Ltd.) instead of polyolefin base material S ₁ (trade name "Funcrare NED#"125", manufactured by Gunze Co., Ltd.), the dicing tape of Comparative Example 3 was produced in the same manner as the dicing tape of Example 1. And, except that the dicing tape of Comparative Example 3 was used instead of the dicing tape of Example 1, the dicing adhesive film of Comparative Example 3 was produced in the same manner as the dicing adhesive film of Example 1.

[Comparative Example 4] In addition to using other polyolefin base material S ₅ (trade name "NSO", thickness 100 μm, manufactured by Okura Industrial Co., Ltd.) instead of polyolefin base material S ₁ (trade name "Funcrare NED#"125", manufactured by Gunze Co., Ltd.), the dicing tape of Comparative Example 3 was produced in the same manner as the dicing tape of Example 1. In addition, the dicing tape of Comparative Example 3 was used instead of the dicing tape of Example 1, and the diameter of the die-cutting die-cut die-shaped die-cutting film was set to 320 μm instead of 312 μm. In the same way as the diced chip adhesive film, the chip diced chip adhesive film of Comparative Example 4 was produced.

<The elongation at break of the adhesive film (DAF)> For each of the mucosal films in Examples 1-7 and Comparative Examples 1-4, they were measured by a tensile test using a tensile tester (trade name "Autograph AG-X", manufactured by Shimadzu Corporation) The elongation at break at -15℃ in the unhardened state. The mucosal film test piece for the tensile test was prepared as follows: For each of the Examples and Comparative Examples, after a plurality of mucosal films were laminated to a thickness of 210 μm to form a laminated body, the length of the laminated body was 60 mm × 10 mm width cut out. Also, in the tensile test, the initial distance between the chucks is 20 mm, the temperature condition is -15°C, the standing time at -15°C of the test piece before stretching is 2 minutes, and the tensile speed is 100 mm /Minute. The value (%) of the measured elongation at break (the ratio of the length of the elongation at break to the length before elongation) is shown in Table 1.

＜The elongation at break of the crystal cut tape (DT)＞ For each diced tape in Examples 1 to 7 and Comparative Examples 1 to 4, the measurement was performed by a tensile test using a tensile tester (trade name "Autograph AG-X", manufactured by Shimadzu Corporation) Elongation at break at -15°C. As the diced tape test pieces used for the tensile test, two types of test pieces (first test piece and second test piece) were prepared for each Example and Comparative Example. The first test piece is cut out from the cut crystal tape with a length of 90 mm×width of 10 mm in the MD direction. The second test piece is cut out from the cutting tape with a length of 90 mm×width 10 mm in the TD direction. Also, in the tensile test, the initial distance between the chucks is 50 mm, the temperature condition is -15°C, the standing time at -15°C of the test piece before stretching is 2 minutes, and the tensile speed is 300 mm /Minute. The value (%) of the measured elongation at break (the ratio of the length of the elongation at break to the length before elongation) is shown in Table 1. The value described in Table 1 is the average of the breaking elongation of the first test piece and the breaking elongation of the second test piece.

<The heat shrinkage rate of DT tape> For each diced tape in Examples 1 to 7 and Comparative Examples 1 to 4, the thermal shrinkage rate in the MD direction, the thermal shrinkage rate in the TD direction, and the average thermal shrinkage rate of these tapes were measured. The details are as follows.

For each Example and Comparative Example, two types of test pieces (third test piece and fourth test piece) were prepared. The third test piece was cut out from the cut crystal tape with a length of 140 mm × a width of 10 mm in the MD direction. The fourth test piece is cut out from the cut crystal tape with a length of 140 mm×width 10 mm in the TD direction. A pair of marking lines separated in the length direction of each test piece that was cut out was given. Each marking line extends in the width direction of the test piece, and the distance between the marking lines is 100 mm. In addition, a tensile tester (trade name "Autograph AG-X", manufactured by Shimadzu Corporation) was used to extend the test piece. In this stretching operation, the initial distance between the chucks is 100 mm (the test piece is held in the chucks in such a way that the distance between the chucks and the mark line is consistent), 23°C and a tensile speed of 1000 mm/min. The test piece was stretched until the distance between the chucks was 120 mm, and after stretching, the test piece was allowed to stand for 60 seconds. The test piece after the stretching operation was removed from the tensile tester, and after measuring the distance L ₁ between the marking lines, the heat treatment was performed. In the heat treatment, the heating temperature is 100°C, and the heating time is 10 seconds. After this heat treatment, the distance L ₂ between the marking lines of the test piece was measured. The value (%) of the heat shrinkage rate (the ratio of the length of the shrinkage part (L _1- L ₂ ) to the length L ₁ before shrinkage) calculated for the test piece, and the MD direction heat shrinkage from each example and comparative example The average heat shrinkage rate (%) calculated from the rate and the heat shrinkage rate in the TD direction is shown in Table 1.

＜Evaluation from the expansion step to the picking step＞ Using the above-mentioned diced chip adhesive films of Examples 1 to 7 and Comparative Examples 1 to 4, the following bonding steps, severing steps (cold expansion step for severing), and interval steps (expansion step + heat shrinking step) were carried out. And picking steps.

In the bonding step, a semiconductor wafer held by a wafer processing tape (trade name "UB-3083D", manufactured by Nitto Denko Co., Ltd.) is attached to the die attach film of the dicing die attach film. Semiconductor wafer stripping tape for wafer processing. In the lamination, a laminating machine is used, the lamination speed is 10 mm/sec, the temperature condition is 50 to 80°C, and the pressure condition is 0.15 MPa. In addition, the semiconductor wafer is prepared as follows.

First, on the bare wafer (12 inches in diameter, 780 μm thick, manufactured by Tokyo Chemical Industry Co., Ltd.), the wafer processing tape (trade name "UB-3083D ", manufactured by Nitto Denko Co., Ltd.). Secondly, using a stealth dicing device (trade name "DAL7360 (SDE05)", Power: 0.25 W, Frequency: 80 kHz, manufactured by Disco Co., Ltd.), the bare wafer is opposite to the first side The back side (second side) is irradiated along the predetermined dividing line in the wafer to make the condensing point align with the laser light on the side of the first side in the wafer. A modified area for singulation is formed on the 1 side (the depth from the first side of the wafer is 50 μm, forming a grid with an interval of 10 mm×10 mm). After that, a backside polishing device (trade name "DGP8760", manufactured by Disco Co., Ltd.) was used to grind the wafer from the second surface (the surface where the modified region was not formed) to thin the wafer to The thickness is 30 μm. In the above manner, a semiconductor wafer (in a state held by the wafer processing tape) is formed. The semiconductor wafer includes a section that is singulated into a plurality of semiconductor chips (10 mm×10 mm).

The cutting step was performed in the cold expansion unit as its first expansion unit using a spreading device (trade name "Die Separator DDS2300", manufactured by Disco Co., Ltd.). Specifically, first, a 12-inch diameter SUS ring frame (manufactured by Disco Co., Ltd.) is attached to the dicing tape adhesive layer of the above-mentioned dicing die attach film with a semiconductor wafer at room temperature. ). Secondly, the dicing die attach film is placed in the device, and in the first expansion unit of the same device, the dicing tape of the die die attaching film with the semiconductor wafer is expanded. In this cutting step, the temperature is -15°C, the expansion speed is 200 mm/sec, and the expansion amount is 11 mm.

After the severing step, observe the adhesive film, and measure the side of the predetermined side (that is, the side that is opposite to the modified region of the semiconductor wafer and the side that occurs when the semiconductor wafer is severed), which is not cut The number of sides. And, from the total number of sides scheduled to be cut and the number of uncut sides, the ratio of the number of cut sides to the total number of sides scheduled to be cut is calculated as the cut rate (%). The results are shown in Table 1. In addition, the dicing tape of the dicing mucous film of Examples 1 to 7 and Comparative Examples 1 to 3 did not produce a fractured part in the cutting step. In contrast, the dicing tape of the dicing mucous film of Comparative Example 4 was Fracture parts are generated during the cutting step. The results are also shown in Table 1.

The interval step is performed in the second expansion unit using the expansion device (trade name "Die Separator DDS2300", manufactured by Disco Co., Ltd.). In this step, first, in the second expansion unit of the same device, the dicing tape of the dicing die attach film with the semiconductor wafer after the above-mentioned slicing step is lifted by the worktable that can vacuum the workpiece Jack up and expand. In this expansion, the temperature is 23°C, the expansion speed is 1 mm/sec, and the expansion amount is 9 mm. In this step, secondly, the dicing tape expanded by the rise of the workbench is vacuum-adsorbed by the workbench, and the workbench and the workpiece are lowered together while maintaining the suction state by the workbench. In addition, heat shrinking treatment (heat shrinking) is performed on the peripheral edge portion outside the workpiece bonding area in the chip adhesive film. In this process, the temperature of the hot air for heating is 250°C, the air volume is 40 L/min, and the heating distance (the distance from the hot air outlet to the object to be heated) is 20 mm to maintain the dicing adhesion of the semiconductor wafer The rotation speed of the crystal film platform is 3°/sec.

After the interval step, use a laser microscope (trade name "H300", manufactured by Lasertec Co., Ltd.) to measure the difference between the semiconductor chip produced by singulation at the center of the wafer and the four semiconductor chips adjacent to the four sides. distance. The average value of this distance is shown in Table 1 as the slit width (μm).

In the pick-up step, a device with a pick-up mechanism (trade name "Die bonder SPA-300", manufactured by Xinchuan Co., Ltd.) is used to try to pick up the singulated semiconductor chip with a die bond film on the dicing tape. In this pickup, the pickup height was 350 μm, and the pickup evaluation number was 50. Regarding this picking step, the case where all the 50 semiconductor wafers with die attach film can be picked up from the dicing tape was evaluated as excellent (◎), and the case where the pickup success rate was 90% or more and less than 100% was evaluated as good (○), the case where the picking success rate is less than 90% is evaluated as bad (×). The results of this evaluation are shown in Table 1 (the diced chip mucosal film of Comparative Example 4 where the fractured portion occurred in the severing step as described above was not subjected to pick-up evaluation).

[Evaluation] With the sticky film of Examples 1-7, good cutting can be achieved in the expansion step, and a sufficient cut width can be ensured for the cutting part between the chips.

[Table 1] Example 1 Example 2 Example 3 Example 4 Example 5 Example 6 Example 7 Comparative example 1 Comparative example 2 Comparative example 3 Comparative example 4 DAF Acrylic resin A ₁ 100 100 100 ― 100 100 100 100 100 100 100 Acrylic resin A ₂ ― ― ― 100 ― ― ― ― ― ― ― Phenol resin 12 12 12 210 12 12 12 12 6 12 12 Epoxy resin E ₁ ― ― ― 52 ― ― ― ― ― ― ― Epoxy resin E ₂ ― ― ― 140 ― ― ― ― ― ― ― Hardening accelerator ― ― ― 3 ― ― ― ― ― ― ― filler 100 100 100 350 100 100 100 100 50 100 100 DT base material S ₁ S ₁ S ₁ S ₁ S ₂ S ₃ S ₄ S ₁ S ₁ S ₅ S ₅ DAF diameter D ₁ (mm) 312 315 320 320 320 320 320 330 320 312 320 Diameter of wafer D ₂ (mm) 300 300 300 300 300 300 300 300 300 300 300 (D ₁ －D ₂ )/D ₂ 0.04 0.05 0.067 0.067 0.067 0.067 0.067 0.1 0.067 0.04 0.067 Elongation at break of DAF (%) 15 15 15 4 15 15 15 15 28 15 15 Elongation at break of DT (%) 457 457 457 457 517 341 496 457 457 113 113 DT heat shrinkage rate (%) MD direction 10 10 10 10 1.9 0.9 0.2 10 10 0 0 TD direction 0 0 0 0 1.0 0.7 1.0 0 0 0.2 0.2 average 5 5 5 5 1.5 0.8 0.6 5 5 0.1 0.1 Cutting rate (%) 100 100 100 100 96 100 100 100 86 89 67 Break of DT no no no no no no no no no no Have Incision width (μm) 45 41 35 40 27 25 twenty two 19 34 18 ― Pick up evaluation ◎ ◎ ◎ ◎ ○ ○ ○ × × × ―

10, 11: Mucous film 10A: Wafer bonding area 20: Cut crystal belt 21: Substrate 22: Adhesive layer 22a: Adhesive surface W, 30A, 30B: semiconductor wafer 30C: Semiconductor wafer split body 30a: Modified area 30b: Division slot 31: Semiconductor wafer 41: ring frame 42: retainer 43: jack up member 44: Workbench 45: ejector component 46: Adsorption fixture 51: adherent body 52: Bonding wire 53: Sealing resin R: irradiation area T1: Tape for wafer processing T1a: Adhesive surface T2: Tape for wafer processing T2a: Adhesive surface T3: Tape for wafer processing T3a: Adhesive surface Wa: side 1 Wb: side 2 X: diced wafer

Fig. 1 is a schematic cross-sectional view of a dicing die-cut film according to an embodiment of the present invention. FIGS. 2(a)-(c) show a part of the steps of a semiconductor device manufacturing method using the die-cut die film shown in FIG. 1. Figures 3(a) and (b) show the subsequent steps of the steps shown in Figure 2. Figures 4(a) to (c) show subsequent steps of the steps shown in Figure 3. Figures 5(a) to (c) show subsequent steps of the steps shown in Figure 4. FIG. 6 shows the subsequent steps of the steps shown in FIG. 5. Figures 7(a) to (c) show the subsequent steps of the steps shown in Figure 6. FIGS. 8(a) to (d) show some steps of a variation of the manufacturing method of a semiconductor device using the die-cut die film shown in FIG. 1. Figures 9(a) and (b) show subsequent steps of the steps shown in Figure 8. FIG. 10 shows a partial step of a variation of the manufacturing method of a semiconductor device using the die-cut die-bonding film shown in FIG. 1. Figures 11(a) and (b) show subsequent steps of the steps shown in Figure 10.

10: Mucosal film

10A: Wafer bonding area

20: Cut crystal belt

21: Substrate

22: Adhesive layer

22a: Adhesive surface

R: irradiation area

X: diced wafer

Claims (3)

A dicing die-cutting film comprising a die-cutting tape having a laminated structure including a substrate and an adhesive layer, and a die-cutting film that is peelably adhered to the adhesive layer of the die-cutting tape, with respect to the die-cutting tape , For a 10 mm width crystal-cut strip test piece, the tensile test at the initial chuck distance of 50 mm, -15°C and a tensile speed of 300 mm/min. The elongation at break is 120% or more. The above-mentioned mucosal film breaks in a tensile test of a mucosal film test piece with a width of 10 mm and a thickness of 210 μm under the conditions of an initial distance of 20 mm between chucks, -15°C and a tensile speed of 100 mm/min The elongation rate is less than 20%, the above-mentioned adhesive film has a disc shape with a diameter D ₁ and includes a wafer bonding area with a diameter D _{2 that} is concentric with the disc shape, and D ₁ and D ₂ satisfy D ₁ > D ₂ and (D _1- D ₂ )/D ₂ <0.1. Such as the dicing die bond film of claim 1, wherein the diameter D ₂ of the wafer bonding area is 200-300 mm. Such as claim 1 or 2 of the diced wafer mucous film, in which the above-mentioned diced tape is stretched to 120 mm between the chucks at an initial distance of 100 mm, 23°C and a stretching speed of 1000 mm/min. The heat shrinkage rate in the heat treatment test performed on the wafer-cut strip test piece with a width of 10 mm at a heating temperature of 100°C and a heating time of 10 seconds is 0.1% or more.

Images