KR102007111B1 - Semiconductor processing tape - Google Patents

Abstract

[PROBLEMS] To provide a semiconductor processing tape having a low thermal shrinkage, uniform shrinkage regardless of the direction of the tape, no wrinkles, no chip position shift, and a cuff width uniformly expanded. [Measures] When the heat shrinkage in both the longitudinal direction and the width direction of the tape when heated at 100 ° C. for 10 seconds is 0% or more and 20% or more, and when either one of the heat shrinkage in the longitudinal direction and the width direction is 0.1% or more. Heat shrinkage ratio in the longitudinal direction / heat shrinkage ratio in the width direction = 0.01 to 100, characterized in that the tape for semiconductor processing. (Shrinkage ratio = (Dimension before heating-Dimension after heating) / Dimension before heating × 100 (%))

Description

Semiconductor processing tape {SEMICONDUCTOR PROCESSING TAPE}

The present invention relates to a tape for semiconductor processing excellent in pickup properties.

Conventionally, in the manufacturing process of a semiconductor device such as an integrated circuit (IC: Integrated Circuit), in order to thin the wafer after circuit pattern formation, a backgrinding process for grinding the back surface of the wafer, and a tape for attaching the adhesive and elastic semiconductor processing to the back surface of the wafer Thereafter, a dicing step of dividing the wafer into chips, an expansion step of expanding (expanding) a semiconductor processing tape, a pickup step of picking up the divided chips, and furthermore, adhering the picked chips to a lead frame or a package substrate ( Or in a stack package, the die bonding (mount) process of laminating | stacking and adhering chips is performed.

In the said backgrinding process, in order to protect the circuit pattern formation surface (wafer surface) of a wafer from contamination, a surface protection tape is used. When peeling this surface protection tape from the wafer surface after completion | finish of back surface grinding of a wafer, after attaching the tape for semiconductor processing (dicing die bonding tape) demonstrated below to the back surface of a wafer, it is for semiconductor processing to an adsorption table. After fixing the tape side and giving a surface protection tape the process which reduces the adhesive force to a wafer, a surface protection tape is peeled off. The wafer from which the surface protection tape has been peeled off is then taken up from the adsorption table and provided to the next dicing step in a state where the tape for semiconductor processing is bonded to the back surface. In addition, the process which reduces said adhesive force is an energy-beam irradiation process, when a surface protection tape consists of energy ray curable components, such as an ultraviolet-ray, and heat processing, when a surface protection tape consists of a thermosetting component.

In the dicing process-the mounting process after the said backgrinding process, the tape for semiconductor processing in which the adhesive layer and the adhesive bond layer were laminated | stacked on this base film in this order is used. In general, in the case of using such a semiconductor processing tape, first, the adhesive layer of the semiconductor processing tape is bonded to the back surface of the wafer to fix the wafer, and the wafer and the adhesive layer are diced in units of chips using a dicing blade. Thereafter, as the tape is expanded in the radial direction of the wafer, an expansion step is performed to widen the gap between the chips. This expansion step is performed in order to increase the recognition of the chip by the CCD camera or the like in a subsequent pickup step and to prevent chip breakage caused by the contact between adjacent chips when picking up the chip. Thereafter, the chip is peeled off from the pressure-sensitive adhesive layer together with the adhesive layer in the pick-up step and picked up, and directly bonded to a lead frame, a package substrate, or the like in the mounting step. As described above, by using the tape for semiconductor processing, the chip with the adhesive layer can be directly adhered to the lead frame or the package substrate, so that the step of applying the adhesive or the step of adhering the die bonding film to each chip separately can be omitted. Can be.

However, in the dicing step, as described above, since the wafer and the adhesive layer are diced together using the dicing blade, not only the cutting chips of the wafer but also the cutting chips of the adhesive layer are generated. In the case where the cutting chips of the adhesive layer are accumulated in the dicing grooves of the wafer, chips are stuck to each other and pick-up defects occur, resulting in a decrease in the yield of manufacturing a semiconductor device.

In order to solve such a problem, the method of dividing an adhesive bond layer into individual chips is proposed by dicing only a wafer with a blade in a dicing process, and expanding a tape for semiconductor processing in an expansion process (for example, patent document 1). ). According to such a method of dividing the adhesive layer using the tension at the time of expansion, the cutting chips of the adhesive do not occur and do not adversely affect the pick-up process.

Moreover, in recent years, the so-called stealth dicing method which can cut a wafer non-contact using a laser processing apparatus as a cutting method of a wafer is proposed. For example, Patent Document 2 uses a stealth dicing method to interpose an inside of a semiconductor substrate by irradiating laser light while focusing the light inside the semiconductor substrate on which the sheet is attached via an adhesive layer (die bond resin layer). Disclosed is a method for cutting a semiconductor substrate, the method including forming a modified region by photon absorption, making the modified region a cutting scheduled portion, and cutting the semiconductor substrate and the adhesive layer along the cutting scheduled portion by expanding the sheet. have.

In addition, as a cutting method of another wafer using a laser processing apparatus, Patent Document 3, for example, includes a step of attaching a die bonding adhesive layer (adhesive film) to the back surface of the wafer, and a wafer bonded to the adhesive layer. Bonding the protective adhesive tape which is extensible to the adhesive layer side, irradiating a laser beam along the street and dividing it into individual chips from the surface of the wafer on which the protective adhesive tape is bonded; A method of dividing a wafer has been proposed, which includes applying a tensile force to the layer to break the adhesive layer for each chip and removing the chip on which the broken adhesive layer is bonded from the protective adhesive tape.

According to the wafer cutting methods described in these Patent Documents 2 and 3, since the wafer is cut in a non-contact manner by irradiation of a laser beam and expansion of the tape, the physical load on the wafer is small and the mainstream blade dicing is performed. The wafer can be cut without generating wafer cutting chips (chipping). Moreover, since an adhesive bond layer is divided | segmented by expansion, it does not generate the cutting waste of an adhesive bond layer. For this reason, it is attracting attention as an outstanding technique which can replace blade dicing.

In addition, in Patent Document 4, in order to prevent the gap between the individual chips from being stably maintained as the loosening after expansion occurs, the tape is heated and shrinked and tensioned after the dividing step, and the gap between the chips (hereinafter referred to as "cuff width"). Has been proposed.

Patent Document 1: Japanese Patent Application Laid-Open No. 2007-5530 Patent Document 2: Japanese Patent Application Laid-Open No. 2003-338467 Patent Document 3: Japanese Patent Application Laid-Open No. 2004-273895 Patent Document 4: Japanese Unexamined Patent Publication No. 2011-216508

On the other hand, if the heat shrinkage stress is large at the time of heat shrinkage, the cuff width of only the direction in which the heat shrinkage stress is large is expanded more than necessary, and the cuff in the direction in which the heat shrinkage stress is small is increased. The width may narrow. Narrow cuff width causes poor pip up. Specifically, when the numerical value of the heat shrinkage ratio in the longitudinal direction / heat direction in the width direction is large, the difference between the longitudinal direction and the width direction becomes too large, so that the cuff width is not uniform and a difference occurs in the chip position, and it is recognized at the time of pickup. If a defect occurs, and if the cuff width is too narrow, the adhesive film is re-adhered, resulting in pickup failure. Further, even when the heat shrinkage ratio in the longitudinal direction / heat shrinkage ratio in the width direction is a negative value, the cuff width is not uniform because one side is extended and one side is reduced.

The present invention provides a tape for semiconductor processing in which the shrinkage rate is low in the tape shrinkage step, uniformly shrinks regardless of the tape direction, no wrinkles occur, chip position does not shift, and the cuff width is uniformly expanded.

That is, in this invention, the heat shrink rate of the tape when it heats at 100 degreeC for 10 second is 0% or more and 20% or less, and the heat shrink rate of the longitudinal direction / heat shrinkage rate of the width direction = 0.01 or more and 100 or less, The tape for a semiconductor process It is about.

(Shrinkage ratio = (pre-heating dimension-post-heating dimension) / pre-heating dimension x 100 (%).)

Moreover, the said tape for semiconductor processing is

(a) bonding the surface protection tape to the wafer surface on which the circuit pattern is formed;

(b) a backgrinding process for grinding the back surface of the wafer,

(c) bonding the adhesive layer of the tape for semiconductor processing to the back surface of the wafer while the wafer is heated;

(d) peeling off the surface protection tape from the wafer surface;

(e) irradiating a laser beam to a portion to be divided of the wafer to form a modified region by multiphoton absorption in the wafer,

(f) an expansion step of dividing the adhesive layer of the wafer and the semiconductor processing tape along a dividing line by expanding the semiconductor processing tape to obtain a plurality of chips with the adhesive layer;

(g) in the semiconductor processing tape after expansion, heating and shrinking a portion not overlapping with the chip to remove looseness generated in the expansion step to maintain the gap between the chips;

(h) It is used for the manufacturing method of a semiconductor device including the process of picking up the said chip | tip with the said adhesive bond layer from the adhesive layer of the said semiconductor processing tape, The said semiconductor processing tape characterized by the above-mentioned.

Moreover, the said tape for semiconductor processing is

(a) bonding the surface protection tape to the wafer surface on which the circuit pattern is formed;

(b) a backgrinding process for grinding the back surface of the wafer,

(c) bonding the adhesive layer of the tape for semiconductor processing to the back surface of the wafer while the wafer is heated;

(d) peeling off the surface protection tape from the wafer surface;

(e) irradiating a laser beam along a dividing line on the wafer surface to divide the wafer into chips;

(f) an expansion step of dividing the adhesive layer for each chip by expanding the tape for semiconductor processing to obtain a plurality of chips with the adhesive layer;

(g) in the semiconductor processing tape after expansion, heating and shrinking a portion not overlapping with the chip to remove looseness generated in the expansion step to maintain the gap between the chips;

(h) It is used for the manufacturing method of a semiconductor device including the process of picking up the chip | tip with the said adhesive bond layer from the adhesive layer of the said semiconductor processing tape, The said semiconductor processing tape characterized by the above-mentioned.

Moreover, the said tape for semiconductor processing is

(a) bonding the surface protection tape to the wafer surface on which the circuit pattern is formed;

(b) a backgrinding process for grinding the back surface of the wafer,

(c) bonding the adhesive layer of the tape for semiconductor processing to the back surface of the wafer while the wafer is heated;

(d) peeling off the surface protection tape from the wafer surface;

(e) cutting the wafer along a dividing line using a dicing blade to divide the wafer into chips;

(f) an expansion step of dividing the adhesive layer for each chip by expanding the tape for semiconductor processing to obtain a plurality of chips with the adhesive layer;

(g) in the semiconductor processing tape after expansion, heating and shrinking a portion not overlapping with the chip to remove looseness generated in the expansion step to maintain the gap between the chips;

(h) It is used for the manufacturing method of a semiconductor device including the process of picking up the chip | tip with the said adhesive bond layer from the adhesive layer of the said semiconductor processing tape, The said semiconductor processing tape characterized by the above-mentioned.

Moreover, the said tape for semiconductor processing is

(a) bonding a dicing tape to the back surface of the wafer on which the circuit pattern is formed, and cutting it to a depth less than the thickness of the wafer along a scheduled dividing line using a dicing blade;

(b) bonding a surface protection tape to the wafer surface;

(c) a backgrinding process in which the dicing tape is peeled off, the back surface of the wafer is ground and divided into chips;

(d) bonding the adhesive layer of the tape for semiconductor processing to the back surface of the wafer segmented with the chip while the wafer is heated;

(e) peeling a surface protection tape from the surface of the wafer segmented with the chip;

(f) an expansion step of dividing the adhesive layer for each chip by expanding the tape for semiconductor processing to obtain a plurality of chips with the adhesive layer;

(g) in the semiconductor processing tape after expansion, heating and shrinking a portion that does not overlap with the chip to remove looseness generated in the expansion step to maintain the gap between the chips;

(h) It is used for the manufacturing method of a semiconductor device including the process of picking up the said chip | tip with an adhesive bond layer from the adhesive layer of the said tape for semiconductor processing, The said semiconductor processing tape characterized by the above-mentioned.

Moreover, the said tape for semiconductor processing is

(a) bonding the surface protection tape to the wafer surface on which the circuit pattern is formed;

(b) irradiating a laser beam onto a portion to be divided of the wafer to form a modified region by multiphoton absorption in the wafer;

(c) a backgrinding process for grinding the back surface of the wafer,

(d) bonding the adhesive layer of the tape for semiconductor processing to the back surface of the wafer while the wafer is heated;

(e) peeling the surface protection tape from the wafer surface;

(f) an expansion step of dividing the adhesive layer of the wafer and the semiconductor processing tape along a dividing line by expanding the semiconductor processing tape to obtain a plurality of chips with the adhesive layer;

(g) in the semiconductor processing tape after expansion, heating and shrinking a portion that does not overlap with the chip to remove looseness generated in the expansion step to maintain the gap between the chips;

(h) It is used for the manufacturing method of a semiconductor device including the process of picking up the chip | tip with the said adhesive bond layer from the adhesive layer of the said semiconductor processing tape, The said semiconductor processing tape characterized by the above-mentioned.

Moreover, this invention relates to the said tape for semiconductor processings in any one of the heat shrink rate of a longitudinal direction and a width direction is 0.1% or more.

Moreover, this invention relates to the semiconductor device which uses the said tape for semiconductor processing.

By using the tape for semiconductor processing provided by this invention, since a cuff width does not change and it expands uniformly, the highly reliable semiconductor device which a chip position does not shift and a pick-up problem does not arise can be obtained.

BRIEF DESCRIPTION OF THE DRAWINGS It is sectional drawing which shows typically the structure of the tape for a semiconductor processing which concerns on embodiment of this invention.
2 is a cross-sectional view showing a state in which a surface protection tape is bonded to a wafer.
It is sectional drawing for demonstrating the process of bonding a wafer and a ring frame to the tape for semiconductor processing which concerns on embodiment of this invention.
It is sectional drawing explaining the process of peeling a surface protection tape from the surface of a wafer.
5 is a cross-sectional view showing a state in which a modified region is formed on a wafer by laser processing.
FIG. 6A is a cross-sectional view showing a state in which a tape for semiconductor processing according to an embodiment of the present invention is mounted on an expansion device. (b) is sectional drawing which shows the process of dividing a wafer into chips by the expansion of the tape for a semiconductor process. (c) is sectional drawing which shows the tape, an adhesive bond layer, and a chip | tip for semiconductor processing after expansion.
7 is a cross-sectional view for explaining a heat shrink process.

<Tape for semiconductor processing>

1: is sectional drawing which shows the tape 10 for semiconductor processing which concerns on embodiment of this invention. When the tape 10 for semiconductor processing of this invention divides a wafer into chips by expansion, the adhesive bond layer 13 is divided along a chip. The tape 10 for semiconductor processing is the adhesive tape 15 which consists of the adhesive film 12 provided on the base film 11 and the base film 11, and the adhesive bond layer 13 provided on the adhesive layer 12. The back side of the wafer is bonded together to the adhesive bond layer 13. In addition, each layer may be cut | disconnected (precut) to a predetermined shape previously according to a use process and an apparatus. In addition, the tape 10 for a semiconductor process of this invention may be the form cut | disconnected for every wafer, or the form which rolled up the elongate sheet in which the multiple cut | disconnected every wafer is formed in roll shape may be sufficient.

In the tape for semiconductor processing of the present invention, the thermal shrinkage of the tape when heated at 100 ° C. for 10 seconds is 0% or more and 20% or less, and the thermal shrinkage in the longitudinal direction / thermal shrinkage in the width direction = 0.01 or more and 100 or less. (Shrinkage ratio = (pre-heating dimension-post-heating dimension) / pre-heating dimension x 100 (%)).

Specifically, after stretching 20% at 500 mm / min to the test piece of tape by the method of JIS 7162, it hold | maintains for 60 second. Thereafter, the test pieces are removed from the tester and heated to 100 ° C. for 10 seconds to measure the heat shrinkage before and after.

The heat shrinkage rate of the tape when heated at 100 ° C. for 10 seconds is 0% or more and 20% or less, and

Heat shrinkage in the longitudinal direction / heat shrinkage in the width direction = 0.01 to 100 means that the heat shrinkage is small and the cuff width shrinks uniformly regardless of the tape direction. Therefore, it has a remarkable effect that it is not wrinkled, there is no difference in chip position, and it can pick up well.

If the numerical value of the heat shrinkage ratio in the longitudinal direction / the heat shrinkage ratio in the width direction exceeds 100, or less than 0.01, if the difference between the longitudinal direction and the width direction becomes too large, the cuff width is not uniform and a difference occurs in the chip position. Recognition failure occurs, and when the cuff width becomes too narrow, the adhesive film is re-adhered to cause pickup failure. Further, even when the heat shrinkage rate in the longitudinal direction / heat shrinkage rate in the width direction is a negative value, the cuff width is not uniform because one side is increased and one side is reduced.

If the thermal shrinkage is more than 20%, the shrinkage becomes too large, and as a result, the cuff width is increased beyond the widened cuff width, resulting in wrinkles on the tape and differences in chip position.

Moreover, there is no problem in the case where both the heat shrinkage in the longitudinal direction and the width direction are 0% or more and less than 0.1%, but if any one of the heat shrinkage in the longitudinal direction and the width direction is 0.1% or more, it is preferably contracted.

Various methods exist for adjusting the physical properties of the semiconductor tape within this range, but are preferably adjusted by an energy ray hardening treatment, a known biaxial extrusion method, a heat set treatment, or the like before the expansion treatment. Can be.

Hereinafter, the structure of each layer of the tape for a semiconductor process is demonstrated.

<Base film>

The base film 11 is preferable at the point which can be cut | disconnected without biasing in the omnidirectional direction in an expansion process, if it has uniform and isotropic expandability, It does not specifically limit about the material. In general, the crosslinked resin has a greater restoring force against tension than the non-crosslinked resin, and has a larger shrinkage stress when heat is applied to an expanded state after the expansion step. Therefore, it is excellent in the heat shrink process which removes the looseness which arose in the tape after an expansion process by heat shrink, and tensions a tape and maintains individual chip | tip spacing stably. Among the crosslinked resins, thermoplastic crosslinked resins are more preferably used. On the other hand, non-crosslinked resins have a smaller restoring force against tension than crosslinked resins. Therefore, after the expansion process in a low temperature region, such as -15 ° C to 0 ° C, the adhesive layer adhered to the chips is loosened once, returned to room temperature, and the tape does not shrink well when going to the pick-up process and the mount process. It is excellent in that it can prevent contact. Among the non-crosslinked resins, olefin-based noncrosslinked resins are more preferably used.

As such a thermoplastic crosslinking resin, for example, ethylene- (meth) acrylic acid binary copolymer or ethylene- (meth) acrylic acid- (meth) acrylic acid alkyl ester is crosslinked with a metal ion with a ternary copolymer composed of main polymer components. One ionomer resin is illustrated. These are especially preferable at the point which is suitable for an expansion process in terms of uniform expandability, and strong restoring force acts at the time of heating by crosslinking. Metal ion contained in the said ionomer resin is not specifically limited, Although zinc, sodium, etc. are mentioned, Zinc ion is preferable at the point of low elution property and low pollution. In the (meth) acrylic acid alkyl ester of the terpolymer, it is preferable that the alkyl group having 1 to 4 carbon atoms has a high elastic modulus and can propagate a strong force against the wafer. Examples of such (meth) acrylic acid alkyl esters include methyl methacrylate, ethyl methacrylate, propyl methacrylate, butyl methacrylate, methyl acrylate, ethyl acrylate, propyl acrylate, and butyl acrylate.

Moreover, as said thermoplastic crosslinked resin, in addition to the said ionomer resin, about low density polyethylene of specific gravity 0.910 or more and less than 0.930, ultra low density polyethylene of specific gravity 0.910 or less, resin chosen from ethylene-vinyl acetate copolymer, an electron beam etc. It is also preferable to crosslink by irradiating an energy ray. Such a thermoplastic crosslinked resin has a uniform uniform expandability in that a crosslinked portion and a non-crosslinked portion coexist in the resin. In addition, since the strong restoring force acts upon heating, it is also suitable for removing the looseness of the tape generated in the expansion step, and since it contains almost no chlorine in the molecular chain structure, even when incineration of unnecessary tape after use, dioxin or its Since it does not generate the chlorinated aromatic hydrocarbon which is a flexible body, the environmental load is also small. By suitably preparing the quantity of the energy beam irradiated with respect to the said polyethylene and ethylene-vinyl acetate copolymer, resin which has sufficient uniform expandability can be obtained.

Moreover, as a non-crosslinking resin, the mixed resin composition of a polypropylene and a styrene butadiene copolymer is illustrated, for example.

As the polypropylene, for example, a homopolymer of propylene or a block or random propylene-ethylene copolymer can be used. The random propylene-ethylene copolymer is preferred because of its low rigidity. When the content rate of the ethylene structural unit in a propylene ethylene copolymer is 0.1 weight% or more, it is excellent in the rigidity of a tape and the resin in a mixed resin composition that the compatibility is high. When the rigidity of the tape is appropriate, the cutting property of the wafer is improved, and when the compatibility between the resins is high, the tape is pushed out to stabilize the discharge amount. More preferably, it is 1 weight% or more. Moreover, when the content rate of the ethylene structural unit in a propylene ethylene copolymer is 7 weight% or less, polypropylene is stable and it is excellent in the point which becomes easy to superpose | polymerize. More preferably, it is 5 weight% or less.

As a styrene-butadiene copolymer, you may use the thing which added hydrogen. When hydrogen is added to the styrene-butadiene copolymer, compatibility with propylene is good and embrittlement and discoloration due to oxidative deterioration due to double bonds in butadiene can be prevented. Moreover, when the content rate of the styrene structural unit in a styrene-butadiene copolymer is 5 weight% or more, it is preferable at the point that a styrene-butadiene copolymer is stable and it is easy to superpose | polymerize. Moreover, in 40 weight% or less, it is excellent in the point which is flexible and expandable. More preferably, it is 25 weight% or less, More preferably, it is 15 weight% or less. As the styrene-butadiene copolymer, either a block copolymer or a random copolymer can be used. A random copolymer is preferable at the point which can disperse | distribute a styrene phase uniformly and can suppress that rigidity becomes too large and expandability improves.

When the polypropylene content in a mixed resin composition is 30 weight% or more, it is excellent in the point which can suppress the thickness nonuniformity of a base film. If the thickness is uniform, the expandability is easily isotropic, and the stress relaxation property of the base film is too large, and the distance between chips decreases over time, and it is easy to prevent the adhesive layers from contacting and re-adhering. More preferably, it is 50 weight% or more. Moreover, when the content rate of polypropylene is 90 weight% or less, it is easy to adjust the rigidity of a base film suitably. If the rigidity of the base film is too large, the force required to expand the base film increases, so that the load on the apparatus increases, and the expansion of the wafer and the adhesive layer 13 may not be sufficient. It is important. The lower limit of the styrene-butadiene copolymer content in the resin composition is preferably 10% by weight or more, and is easily adjusted to the rigidity of the base film suitable for the device. If an upper limit is 70 weight% or less, it is excellent in the point which can suppress thickness nonuniformity, and 50 weight% or less is more preferable.

In addition, in the example shown in FIG. 1, although the base film 11 is a single layer, it is not limited to this, The structure of two or more layers which laminated | stacked 2 or more types of resin may be sufficient, and one type of resin may be laminated | stacked in two or more layers. Two or more types of resins are preferable from the viewpoint of enhancing and expressing their respective properties if they are unified whether crosslinkable or noncrosslinkable, and are preferred in that their defects are compensated for when laminated in combination with crosslinking or noncrosslinking. . Although the thickness of the base film 11 is not specifically prescribed | regulated, what is necessary is just to have sufficient intensity | strength so that it may increase in the expansion process of the tape 10 for semiconductor processing, and does not break. For example, about 50-300 micrometers is good and 70 micrometers-200 micrometers are more preferable.

As a manufacturing method of the multiple layer base film 11, a conventionally well-known extrusion method, the lamination method, etc. can be used. When using the lamination method, you may interpose an adhesive agent between layers. As the adhesive, a conventionally known adhesive can be used.

<Pressure-sensitive adhesive layer>

The adhesive layer 12 can be formed by coating the adhesive composition on the base film 11.

The adhesive layer 12 which comprises the tape 10 for a semiconductor process of this invention does not generate | occur | produce peeling with the adhesive bond layer 13 at the time of dicing, and maintains the grade to the extent that a defect, such as a chip splashing, does not arise. In addition, what is necessary is just to have the characteristic which peels easily with the adhesive bond layer 13 at the time of pick-up.

In the tape 10 for semiconductor processing of this invention, although the structure of the adhesive composition which comprises the adhesive layer 12 is not specifically limited, In order to improve the pick-up property after dicing, an energy ray curable thing is preferable and after hardening, It is preferable that it is a material from which peeling with the adhesive bond layer 13 becomes easy. As one form, in an adhesive composition, it contains 60 mol% or more of (meth) acrylates which have a C6-C12 alkyl chain as a base resin, and an iodine has the energy-beam curable carbon-carbon double bond of 5-30. What has a polymer (A) which has is illustrated. In addition, an energy ray means ionizing radiation, such as a light ray like an ultraviolet-ray, or an electron beam here.

In such a polymer (A), when the amount of energy ray-curable carbon-carbon double bonds to be introduced is 5 or more in iodine value, the effect of reducing the adhesive force after energy ray irradiation is excellent. More preferably, it is 10 or more. In addition, when the iodine value is 30 or less, the chip retaining force until the pick-up after energy ray irradiation is high, and it is excellent in that it is easy to widen the chip spacing at the time of expansion immediately before the pick-up process. If the chip spacing can be sufficiently widened before the pick-up step, it is preferable because image recognition of each chip is easy or pick-up is easy at the time of pick-up. Moreover, when the amount of carbon-carbon double bonds introduced is 5 or more and 30 or less in iodine value, since the polymer (A) itself has stability and manufacture is easy, it is preferable.

Moreover, when a glass transition temperature is -70 degreeC or more, a polymer (A) is excellent in the heat resistance with respect to the heat with energy-beam irradiation, More preferably, it is -66 degreeC or more. Moreover, if it is 15 degrees C or less, it is excellent in the point of the scattering prevention effect of the chip after dicing in the wafer with a rough surface state, More preferably, it is 0 degrees C or less, More preferably, it is -28 degrees C or less.

Although the said polymer (A) may be manufactured, what is obtained is, for example, what is obtained by mixing the acryl-type copolymer and the compound which has an energy-beam curable carbon-carbon double bond, or the acryl-type copolymer which has a functional group, or methacryl which has a functional group. The thing obtained by making compound (A1) react with the compound (A2) which has a functional group which can react with the functional group, and has an energy-beam curable carbon-carbon double bond is used.

Among these, as a methacryl-type copolymer (A1) which has the said functional group, it has a monomer (A1-1) which has carbon-carbon double bonds, such as an alkyl acrylate ester or a methacrylic acid alkyl ester, and a carbon-carbon double bond. Moreover, what is obtained by copolymerizing the monomer (A1-2) which has a functional group is illustrated. As a monomer (A1-1), hexyl acrylate which has a C6-C12 alkyl chain, n-octyl acrylate, isooctyl acrylate, 2-ethylhexyl acrylate, dodecyl acrylate, decyl acrylate, or Pentyl acrylate, n-butyl acrylate, isobutyl acrylate, ethyl acrylate, methyl acrylate, methacrylates such as these, and the like having a monomer having 5 or less carbon atoms in the alkyl chain.

Moreover, since the peeling force of an adhesive layer and an adhesive bond layer can reduce the component whose carbon number of an alkyl chain is 6 or more in monomer (A1-1), it is excellent in the pick-up property. Moreover, the components of 12 or less have a low elasticity modulus at room temperature, and are excellent in the point of the interface adhesive force of an adhesive layer and an adhesive bond layer. When the adhesive force of the interface of an adhesive layer and an adhesive bond layer is high, when the tape is expanded and a wafer is cut | disconnected, the interface twist of an adhesive layer and an adhesive bond layer can be suppressed, and since cutting property improves, it is preferable.

In addition, since the glass transition temperature becomes low, so that the monomer having a large carbon number of an alkyl chain is used as monomer (A1-1), the adhesive composition which has a desired glass transition temperature can be prepared by selecting suitably. Moreover, in addition to glass transition temperature, it is also possible to mix | blend the low molecular compound which has carbon-carbon double bonds, such as vinyl acetate, styrene, and acrylonitrile, for the purpose of improving various performances, such as compatibility. In that case, these low molecular weight compounds shall be mix | blended within the range of 5 mass% or less of the total mass of a monomer (A1-1).

On the other hand, as a functional group which monomer (A1-2) has, a carboxyl group, a hydroxyl group, an amino group, a cyclic acid anhydride group, an epoxy group, an isocyanate group, etc. are mentioned, As a specific example of monomer (A1-2), acrylic acid, methacrylic acid, cinnamic acid , Itaconic acid, fumaric acid, phthalic acid, 2-hydroxyalkyl acrylates, 2-hydroxyalkyl methacrylates, glycol monoacrylates, glycol monomethacrylates, N-methylol acrylamide, N-methyl All methacrylamide, aryl alcohol, N-alkylaminoethyl acrylates, N-alkylaminoethyl methacrylates, acrylamides, methacrylamides, maleic anhydride, itaconic anhydride, fumaric anhydride, phthalic anhydride, Glycidyl acrylate, glycidyl methacrylate, arylglycidyl ether and the like.

Moreover, as a functional group used by a compound (A2), when the functional group which a compound (A1) has is a carboxyl group or a cyclic acid anhydride group, a hydroxyl group, an epoxy group, an isocyanate group, etc. are mentioned, In the case of a hydroxyl group, a cyclic acid anhydride, Isocyanate group etc. are mentioned, In the case of an amino group, an epoxy group, an isocyanate group, etc. are mentioned, In the case of an epoxy group, a carboxyl group, a cyclic acid anhydride group, an amino group, etc. are mentioned, A specific example is monomer (A1-2) Specific examples may include the same as those listed. As the compound (A2), a part of the isocyanate group of the polyisocyanate compound may be urethane-ized with a monomer having a hydroxyl group or a carboxyl group and an energy ray-curable carbon-carbon double bond.

In addition, in the reaction between the compound (A1) and the compound (A2), a desired one can be produced with respect to properties such as an acid value or a hydroxyl value by leaving an unreacted functional group. If the OH group is left so that the hydroxyl value of the polymer (A) is 5 to 100, the risk of pickup error can be further reduced by reducing the adhesive force after energy ray irradiation.

Moreover, when leaving a COOH group so that the acid value of a polymer (A) may be 0.5-30, since the improvement effect after adhesive layer restoration after extending | stretching the tape for semiconductor processing of this invention is obtained, it is preferable. When the hydroxyl value of the polymer (A) is 5 or more, it is excellent in the point of the adhesive force reduction effect after energy-beam irradiation, and when it is 100 or less, it is excellent in the adhesive fluidity | liquidity point after energy-beam irradiation. Moreover, when acid value is 0.5 or more, it is excellent in the point of tape resilience, and when it is 30 or less, it is excellent in the point of adhesive fluidity.

In the synthesis of the polymer (A), ketones, esters, alcohols and aromatics can be used as the organic solvent when the solution is polymerized and reacted. Among them, toluene, ethyl acetate and isopropyl alcohol. As a good quality solvent of generally acryl-based polymers, such as benzenemethyl cellosolve, ethyl cellosolve, acetone, and methyl ethyl ketone, a solvent having a boiling point of 60 to 120 ° C is preferable, and α, α'-azobis is preferable as a polymerization initiator. Radical generators, such as azobis type | system | groups, such as isobutyl nitrile, and organic peroxides, such as benzoyl peloxide, are normally used. At this time, a catalyst and a polymerization inhibitor can be used together as needed, and polymer (A) of desired molecular weight can be obtained by adjusting superposition | polymerization temperature and superposition | polymerization time. In addition, it is preferable to use well-known solvents and chain transfer agents, such as a mercaptan and carbon tetrachloride, for adjusting molecular weight. In addition, this reaction is not limited to solution polymerization, Other methods, such as block polymerization and suspension polymerization, may be sufficient.

Although a polymer (A) can be obtained as mentioned above, when it is 300,000 or more in molecular weight of a polymer (A) in this invention, it is excellent in the point which can raise cohesion force. When the cohesion force is high, it has the effect of suppressing the shift | offset | difference at the interface with an adhesive bond layer at the time of expansion, and since it becomes easy to propagate tensile force to an adhesive bond layer, it is preferable at the point which improves the splitability of an adhesive bond layer. When the molecular weight of the polymer (A) is 2 million or less, it is excellent in the point of gelation suppression at the time of a synthesis | combination and a coating. In addition, molecular weight in this invention is the mass mean molecular weight of polystyrene conversion.

In addition, in the tape 10 for semiconductor processing of this invention, the resin composition which comprises the adhesive layer 12 may have the compound (B) which acts further as a crosslinking agent in addition to a polymer (A). For example, polyisocyanate, melamine formaldehyde resin, and an epoxy resin are mentioned, These can be used individually or in combination of 2 or more types. This compound (B) reacts with a polymer (A) or a base film, and can improve the cohesion force of the adhesive which has the polymer (A) and (B) as a main component after coating an adhesive composition by the resulting crosslinked structure. have.

There is no restriction | limiting in particular as polyisocyanate, For example, 4,4'- diphenylmethane diisocyanate, tolylene diisocyanate, xylene diisocyanate, 4,4'- diphenyl ether diisocyanate, 4,4'- [2,2-bis (4-phenoxyphenyl) propane] aromatic isocyanates such as diisocyanate, hexamethylene diisocyanate, 2,2,4-trimethyl-hexamethylene diisocyanate, isophorone diisocyanate, 4,4'- Dicyclohexyl methane diisocyanate, 2,4'- dicyclohexyl methane diisocyanate, lysine diisocyanate, a lysine triisocyanate, etc. are mentioned, Specifically, Coronate L (made by Japan Polyurethane Co., Ltd., etc.) is mentioned. It is available. As melamine formaldehyde resin, Nikarac MX-45 (made by Sanwa Chemical Co., Ltd., brand name), meran (made by Hitachi Kasei Kogyo Co., Ltd., brand name) etc. can be used specifically ,. As an epoxy resin, TETRAD-X (made by Mitsubishi Chemical Corporation, brand name) etc. can be used. In this invention, it is especially preferable to use polyisocyanate.

The adhesive layer which made the addition amount of a compound (B) 0.1 mass part or more with respect to 100 mass parts of polymers (A) is excellent in the point of cohesion force. More preferably, it is 0.5 mass part or more. Moreover, the adhesive layer set to 15 mass parts or less is excellent in the point of the rapid gelation suppression at the time of coating, and workability | operativity, such as compounding and application | coating of an adhesive, becomes favorable. More preferably, it is 5 mass parts or less.

In addition, in this invention, the adhesive layer 12 may contain the photoinitiator (C). There is no restriction | limiting in particular in the photoinitiator (C) contained in the adhesive layer 12, What is conventionally known can be used. For example, benzophenones such as benzophenone, 4,4'-dimethylaminobenzophenone, 4,4'-diethylaminobenzophenone, 4,4'-dichlorobenzophenone, acetphenone, diethoxy acetphenone, and the like Anthraquinones such as acetphenones, 2-ethyl anthraquinone and t-butyl anthraquinone, 2-chlorothioxanthone, benzoin ethyl ether, benzoin isopropyl ether, benzyl, 2,4,5-triaryl An imidazole dimer (roffin dimer), an acridine type compound, etc. are mentioned, These can be used individually or in combination of 2 or more types. As addition amount of a photoinitiator (C), it is preferable to mix | blend 0.1 mass part or more with respect to 100 mass parts of polymers (A), and 0.5 mass part or more is more preferable. Moreover, the upper limit of 10 mass parts or less is preferable, and 5 mass parts or less are more preferable.

Moreover, a tackifier, an adhesive adjuvant, surfactant, etc., or other modifiers etc. can be mix | blended with the energy ray curable adhesive used for this invention as needed. Moreover, you may add an inorganic compound filler suitably.

The adhesive layer 12 can be formed using the conventional formation method of an adhesive layer. For example, the pressure-sensitive adhesive composition may be applied to a predetermined surface of the base film 11 to be formed, or the pressure-sensitive adhesive composition may be applied onto a separator (for example, a plastic film or sheet coated with a release agent). After forming the adhesive layer 12, the adhesive layer 12 can be formed on the base film 11 by the method of transferring the said adhesive layer 12 to the predetermined surface of a base material. . In addition, the adhesive layer 12 may have the form of a single | mono layer, and may have a laminated form.

Although there is no restriction | limiting in particular as thickness of the adhesive layer 12, When thickness is 2 micrometers or more, it is excellent in the point of adhesive force, and 5 micrometers or more are more preferable. Pickup property is excellent in it being 20 micrometers or less, and 15 micrometers or less are more preferable.

<Adhesive layer>

In the tape 10 for semiconductor processing of this invention, the adhesive bond layer 13 peels from the adhesive layer 12 when a chip | tip is picked up after a wafer is bonded and diced, and sticks to a chip | tip. And it is used as an adhesive agent when fixing a chip to a board | substrate or a lead frame.

Although the adhesive bond layer 13 is not specifically limited, What is necessary is just a film adhesive generally used for a wafer, For example, what contains a thermoplastic resin and a thermopolymerizable component is mentioned. The thermoplastic resin used for the adhesive layer 13 of the present invention is preferably a resin having thermoplasticity or a resin having thermoplasticity in an uncured state, and forming a crosslinked structure after heating, and there is no particular limitation, but as one embodiment, And thermoplastic resins having a weight average molecular weight of 5000 to 200,000 and a glass transition temperature of 0 to 150 ° C. Moreover, as another aspect, the thermoplastic resin whose weight average molecular weights are 100,000-1,000,000, and a glass transition temperature is -50-20 degreeC is mentioned.

As the former thermoplastic resin, for example, polyimide resin, polyamide resin, polyetherimide resin, polyamideimide resin, polyester resin, polyesterimide resin, phenoxy resin, polysulfone resin, polyether sulfone resin, Polyphenylene sulfide resin, polyether ketone resin, etc. are mentioned, Especially, it is preferable to use polyimide resin and a phenoxy resin, and it is preferable to use the polymer containing a functional group as a latter thermoplastic resin.

Polyimide resin can be obtained by condensation reaction of tetracarboxylic dianhydride and diamine by a well-known method. That is, in an organic solvent, tetracarboxylic dianhydride and diamine are used equimolar or almost equimolar (addition order of each component is arbitrary), and reaction is carried out by reaction temperature of 80 degrees C or less, Preferably it is 0-60 degreeC. As the reaction proceeds, the viscosity of the reaction solution gradually rises to produce polyamic acid, which is a precursor of polyimide. The molecular weight can also be adjusted by heating this polyamic acid at the temperature of 50-80 degreeC, and depolymerizing. The polyimide resin can be obtained by dehydrating and closing the reaction product (polyamic acid). Dehydration ring closure can be carried out by a thermal ring method for heat treatment and a chemical ring method using a dehydrating agent.

There is no restriction | limiting in particular as tetracarboxylic dianhydride used as a raw material of polyimide resin, For example, 1, 2- (ethylene) bis (trimellitate anhydride), 1, 3- (trimethylene) bis (trimellis) Tate anhydride), 1,4- (tetramethylene) bis (trimelitate anhydride), 1,5- (pentamethylene) bis (trimelitate anhydride), 1,6- (hexamethylene) bis (trimelitate anhydride ), 1,7- (heptamethylene) bis (trimellitate anhydride), 1,8- (octamethylene) bis (trimelitate anhydride), 1,9- (nonmethylene) bis (trimelitate anhydride), 1,10- (decamethylene) bis (trimelitate anhydride), 1,12- (dodecamethylene) bis (trimelitate anhydride), 1,16- (hexadecamethylene) bis (trimelitate anhydride), 1,18- (octadecamethylene) bis (trimelitate anhydride), pyromellitic dianhydride, 3,3 ', 4,4'-biphenyltetracarboxylic dianhydride, 2,2', 3,3 Biphenyltetracarboxylic dianhydride, 2,2-bis (3,4-dicarboxyphenyl) propane dianhydride, 2,2-bis (2,3-dicarboxyphenyl) propane dianhydride, 1,1-bis (2,3-dicarboxyphenyl) ethane dianhydride, 1,1-bis (3,4-dicarboxyphenyl) ethane dianhydride, bis (2,3-dicarboxyphenyl) methane dianhydride, bis (3,4 -Dicarboxyphenyl) methane dianhydride, bis (3,4-dicarboxyphenyl) sulfone dianhydride, 3,4,9,10-perylenetetracarboxylic dianhydride, bis (3,4-dicarboxyphenyl) ether Dianhydrides, benzene-1,2,3,4-tetracarboxylic dianhydride, 3,4,3 ', 4'-benzophenonetetracarboxylic dianhydride, 2,3,2', 3'-benzophenonetetra Carboxylic dianhydride, 3,3,3 ', 4'-benzophenonetetracarboxylic dianhydride, 1,2,5,6-naphthalenetetracarboxylic dianhydride, 1,4,5,8-naphthalenetetracarboxylic acid Dianhydrides, 2,3,6,7-naphthalenetetracarboxylic acid dianhydrides, 1,2,4,5-naphthalenetetracarboxes Acid dianhydrides, 2,6-dichloronaphthalene-1,4,5,8-tetracarboxylic dianhydride, 2,7-dichloronaphthalene-1,4,5,8-tetracarboxylic dianhydride, 2,3, 6,7-tetrachloronaphthalene-1,4,5,8-tetracarboxylic dianhydride, phenanthrene-1,8,9,10-tetracarboxylic dianhydride, pyrazine-2,3,5,6-tetra Carboxylic dianhydride, thiophene-2,3,5,6-tetracarboxylic dianhydride, 2,3,3 ', 4'-biphenyltetracarboxylic dianhydride, 3,4,3', 4'- Biphenyltetracarboxylic dianhydride, 2,3,2 ', 3'-biphenyltetracarboxylic dianhydride, bis (3,4-dicarboxyphenyl) dimethylsilane dianhydride, bis (3,4-dicarboxyphenyl ) Methylphenylsilane dianhydride, bis (3,4-dicarboxyphenyl) diphenylsilane dianhydride, 1,4-bis (3,4-dicarboxyphenyldimethylsilyl) benzene dianhydride, 1,3-bis (3, 4-dicarboxyphenyl) -1,1,3,3-tetramethyldicyclohexane dianhydride, p-phenylenebis (trimelitate anhydride) , Ethylene tetracarboxylic dianhydride, 1,2,3,4-butanetetracarboxylic dianhydride, decahydronaphthalene-1,4,5,8-tetracarboxylic dianhydride, 4,8-dimethyl-1,2 , 3,5,6,7-hexahydronaphthalene-1,2,5,6-tetracarboxylic dianhydride, cyclopentane-1,2,3,4-tetracarboxylic dianhydride, pyrrolidine-2, 3,4,5-tetracarboxylic dianhydride, 1,2,3,4-cyclobutanetetracarboxylic dianhydride, bis (exo-bicyclo [2,2,1] heptane-2,3-dicarboxylic acid Dianhydrides, bicyclo- [2,2,2] -octo-7-ene-2,3,5,6-tetracarboxylic dianhydride, 2,2-bis (3,4-dicarboxyphenyl) hexafluoro Propane dianhydride, 2,2-bis [4- (3,4-dicarboxyphenyl) phenyl] hexafluoropropane dianhydride, 4,4'-bis (3,4-dicarboxyphenoxy) diphenylsulfide dianhydride Water, 1,4-bis (2-hydroxyhexafluoroisopropyl) benzenebis (trimelitic anhydride), 1,3-bis (2-hydroxyhexaple Luorisopropyl) benzenebis (trimelitic anhydride), 5- (2,5-dioxotetrahydrofuryl) -3-methyl-3-cyclohexene-1,2-dicarboxylic dianhydride, tetrahydrofuran -2,3,4,5-tetracarboxylic dianhydride etc. can be used and these 1 type, or 2 or more types can also be used together.

Moreover, there is no restriction | limiting in particular as diamine used as a raw material of a polyimide, For example, o-phenylenediamine, m-phenylenediamine, p-phenylenediamine, 3,3'- diamino diphenyl ether, 3 , 4'-diaminodiphenyl ether, 4,4'-diaminodiphenyl ether, 3,3'-diaminodiphenylmethane, 3,4'-diaminodiphenylmethane, 4,4'-diamino Diphenylethanemethane, bis (4-amino-3,5-dimethylphenyl) methane, bis (4-amino-3,5-diisopropylphenyl) methane, 3,3'-diaminodiphenyldifluoromethane , 3,4'-diaminodiphenyldifluoromethane, 4,4'-diaminodiphenyldifluoromethane, 3,3'-diaminodiphenylsulfone, 3,4'-diaminodiphenylsulfone, 4 , 4'-diaminodiphenylsulfone, 3,3'-diaminodiphenylsulfide, 3,4'-diaminodiphenylsulfide, 4,4'-diaminodiphenylsulfide, 3,3 ' -Diaminodiphenyl ketone, 3,4'-diaminodiphenyl ketone, 4,4'-diaminodiphenyl ketone, 2,2-bis (3-aminophenyl) propane, 2,2 '-(3,4'-diaminodiphenyl) propane, 2,2-bis (4-aminophenyl) propane, 2,2-bis ( 3-aminophenyl) hexafluoropropane, 2,2- (3,4'-diaminodiphenyl) hexafluoropropane, 2,2-bis (4-aminophenyl) hexafluoropropane, 1,3-bis (3 -Aminophenoxy) benzene, 1,4-bis (3-aminophenoxy) benzene, 1,4-bis (4-aminophenoxy) benzene, 3,3 '-(1,4-phenylenebis (1 -Methylethylidene)) bisaniline, 3,4 '-(1,4-phenylenebis (1-methylethylidene)) bisaniline, 4,4'-(1,4-phenylenebis (1 -Methylethylidene)) bisaniline, 2,2-bis (4- (3-aminophenoxy) phenyl) propane, 2,2-bis (4- (4-aminophenoxy) phenyl) propane, 2, 2-bis (4- (3-aminophenoxy) phenyl) hexafluoropropane, 2,2-bis (4- (4-aminophenoxy) phenyl) hexafluoropropane, bis (4- (3-aminophenoxy ) Phenyl) sulfide, bis (4- (4-aminophenoxy) phenyl) sulfide, bis (4- (3-aminophen Aromatic diamines such as c)) phenyl) sulfone, bis (4- (4-aminophenoxy) phenyl) sulfone, 3,5-diamino benzoic acid, 1,2-diaminoethane, 1,3-diaminopropane, 1 , 4-diaminobutane, 1,5-diaminopentane, 1,6-diaminohexane, 1,7-diaminoheptane, 1,8-diaminooctane, 1,9-diaminononane, 1, 10-diaminodecane, 1,11-diaminoundecane, 1,12-diaminododecane, 1,2-diaminocyclohexane, diaminopolysiloxane represented by the following general formula (1), 1,3-bis (Aminomethyl) cyclohexane, polyoxyalkyl such as Jeffamine D-230, D-400, D-2000, D-4000, ED-600, ED-900, ED-2001, EDR-148, manufactured by San Techno Chemical Co., Ltd. Aliphatic diamines, such as a lendiamine, etc. can be used, and these 1 type, or 2 or more types can also be used together. It is preferable that it is 0-200 degreeC as a glass transition temperature of the said polyimide resin, and it is preferable that it is 10,000-200,000 as a weight average molecular weight.

In general formula (1)

[Formula 1]

(In formula, R <_1> and R <_2> represents a C1-C30 divalent hydrocarbon group, respectively, may be same or different, R <_3> and R <_4> may represent a monovalent hydrocarbon group, each may be same or different, m Is an integer greater than or equal to 1)

The phenoxy resin which is one of the preferable thermoplastic resins other than the above is preferably a resin obtained by a method of reacting various bisphenols and epichlorohydrin, or a method of reacting a liquid epoxy resin and bisphenol, and as bisphenol, bisphenol A and bisphenol bisphenol AF, bisphenol AD, bisphenol F, bisphenol S is mentioned. Phenoxy resins have good compatibility with epoxy resins because they are similar in structure to epoxy resins, and are suitable for imparting good adhesion to adhesive films.

As a phenoxy resin used by this invention, resin which has a repeating unit represented by following General formula (2) is mentioned, for example.

In general formula (2)

(2)

In the said General formula (2), X represents a single bond or a bivalent coupling group. Examples of the divalent linking group include an alkylene group, a phenylene group, -O-, -S-, -SO-, and -SO _2- . Here, the alkylene group is preferably an alkylene group having 1 to 10 carbon atoms, and more preferably -C (R ₅ ) (R ₆ )-. R <_5> , R <_6> represents a hydrogen atom or an alkyl group, As said alkyl group, a C1-C8 linear or branched alkyl group is preferable, For example, methyl, ethyl, n-propyl, isopropyl, isooctyl, 2-ethyl Hexyl, 1,3,3-trimethylbutyl, and the like. In addition, the said alkyl group may be substituted by the halogen atom, for example, a trifluoromethyl group is mentioned. X is an alkylene group, -O-, -S-, a fluorene group or a -SO ₂ - more preferably - are preferable, an alkylene group, and -SO _2. Among them, -C (CH ₃ ) _2- , -CH (CH ₃ )-, -CH _2- , -SO ₂ -are preferable, -C (CH ₃ ) _2- , -CH (CH ₃ )-, -CH ₂ -is more preferred, and -C (CH ₃ ) ₂ -is particularly preferred.

If the phenoxy resin represented by the said General formula (2) has a repeating unit, even if it is resin which has two or more repeating units with different X in the said General formula (2), X may be comprised only by the same repeating unit. In this invention, resin in which X is comprised only from the same repeating unit is preferable.

In addition, when the phenoxy resin represented by the general formula (2) contains a polar substituent such as a hydroxyl group or a carboxyl group, compatibility with the thermopolymerizable component is improved and uniform appearance and properties can be imparted.

If the mass average molecular weight of a phenoxy resin is 5000 or more, it is excellent in the point of film formation. More preferably, it is 10,000 or more, More preferably, it is 30,000 or more. Moreover, when a mass mean molecular weight is 150,000 or less, it is preferable at the point of the fluidity | liquidity at the time of heat press bonding, or compatibility with another resin. More preferably, it is 100,000 or less. Moreover, when glass transition temperature is -50 degreeC or more, it is excellent in the point of film formation, More preferably, it is 0 degreeC or more, More preferably, it is 50 degreeC or more. When glass transition temperature is 150 degreeC, the adhesive force of the adhesive bond layer 13 at the time of die bonding is excellent, More preferably, it is 120 degrees C or less, More preferably, it is 110 degrees C or less.

On the other hand, as a functional group in the polymer containing the said functional group, glycidyl group, acryloyl group, methacryloyl group, a hydroxyl group, a carboxyl group, an isocyanurate group, an amino group, an amide group, etc. are mentioned, for example, Especially, a glycidyl group is preferable.

As a high molecular weight component containing the said functional group, the (meth) acryl copolymer etc. containing functional groups, such as glycidyl group, a hydroxyl group, and a carboxyl group, are mentioned, for example.

As said (meth) acryl copolymer, a (meth) acrylic ester copolymer, an acrylic rubber, etc. can be used, for example, An acrylic rubber is preferable. An acrylic rubber is a rubber which consists of copolymers, such as butyl acrylate and acrylonitrile, copolymers, such as ethyl acrylate and acrylonitrile, mainly having an acrylic ester as a main component.

When it contains a glycidyl group as a functional group, 0.5-6.0 weight% is preferable, as for the quantity of a glycidyl group containing repeating unit, 0.5-5.0 weight% is more preferable, 0.8-5.0 weight% is especially preferable. A glycidyl group containing repeating unit means the structural monomer of the (meth) acryl copolymer containing a glycidyl group, and specifically, it is glycidyl acrylate or glycidyl methacrylate. When the amount of the glycidyl group-containing repeating unit is in this range, the adhesive force can be secured and the gelation can be prevented.

As a constituent monomer of the said (meth) acryl copolymer other than glycidyl acrylate and glycidyl methacrylate, ethyl (meth) acrylate, butyl (meth) acrylate, etc. are mentioned, for example, These Silver can also be used individually or in combination of 2 or more types. In the present invention, ethyl (meth) acrylate refers to ethyl acrylate and / or ethyl methacrylate. The mixing ratio in the case of using a combination of functional monomers may be determined in consideration of the glass transition temperature of the (meth) acryl copolymer. When glass transition temperature is set to -50 degreeC or more, it is preferable at the point which is excellent in film formability and can suppress the excessive adhesion at normal temperature. If the adhesive force at normal temperature is excessive, handling of the adhesive layer will be difficult. More preferably, it is -20 degreeC or more, More preferably, it is 0 degreeC or more. Moreover, when glass transition temperature is 30 degrees C or less, it is excellent in the point of the adhesive force of the adhesive bond layer at the time of die bonding, More preferably, it is 20 degrees C or less.

In the case of producing the high molecular weight component containing the functional monomer by polymerizing the monomer, the polymerization method is not particularly limited. For example, a method such as pearl polymerization or solution polymerization can be used, and among these, pearl polymerization This is preferred.

When the weight average molecular weight of the high molecular weight component containing a functional monomer in this invention is 100,000 or more, it is excellent in the point of film formation, More preferably, it is 200,000 or more, More preferably, it is 500,000 or more. Moreover, when adjusting a weight average molecular weight to 2,000,000 or less, it is excellent in the point that the heating fluidity of the adhesive bond layer at the time of die bonding improves. When the heat fluidity of the adhesive bond layer at the time of die bonding improves, adhesiveness of an adhesive bond layer and a to-be-adhered body will become favorable, an adhesive force can be improved, and it will become easy to suppress cavities by burying the unevenness | corrugation of a to-be-adhered body. More preferably, it is 1,000,000 or less, More preferably, it is 800,000 or less, and when it is 500,000 or less, a larger effect can be obtained.

The thermopolymerizable component is not particularly limited as long as it is polymerized by heat, and examples thereof include glycidyl group, acryloyl group, methacryloyl group, hydroxyl group, carboxyl group, isocyanurate group, amino group, and amide group. The compound which has a functional group, and a trigger material are mentioned, These can be used individually or in combination of 2 or more types, but considering the heat resistance as an adhesive bond layer, thermosetting resin which hardens | cures by heat and produces an adhesive effect is mentioned with a hardening | curing agent and an accelerator. It is preferable to contain together. As a thermosetting resin, an epoxy resin, an acrylic resin, a silicone resin, a phenol resin, a thermosetting polyimide resin, a polyurethane resin, a melamine resin, urea resin etc. are mentioned, for example, especially heat resistance, workability, reliability It is most preferable to use an epoxy resin from the point which can obtain this outstanding adhesive bond layer.

The said epoxy resin does not have a restriction | limiting in particular, if it hardens | cures and performs an adhesive action, The novolak-type epoxy resins, such as bifunctional epoxy resins, such as a bisphenol-A epoxy, a phenol novolak-type epoxy resin, a cresol novolak-type epoxy resin, etc. Can be used. Moreover, what is generally known, such as a polyfunctional epoxy resin, glycidyl amine type | mold epoxy resin, a heterocyclic containing epoxy resin, or an alicyclic epoxy resin, is applicable.

As said bisphenol A epoxy resin, Epicoat series (Epicoat 807, Epicoat 815, Epicoat 825, Epicoat 827, Epicoat 828, Epicoat 834, Epicoat 1001, Epicoat 1004, Epicoat) by Mitsubishi Chemical Corporation Coat 1007, epicoat 1009), manufactured by Dow Chemical, DER-330, DER-301, DER-361, and Shinnitetsu Chemical Co., Ltd., YD8125, YDF8170, etc. are mentioned. As said phenol novolak-type epoxy resin, Epicoat 152 by Mitsubishi Chemical Corporation, Epicoat 154, EPPN-201 by Nippon Kayaku Co., Ltd., DEN-438 by Dow Chemical Corporation, etc., are also said o-cresol novolak-type. As an epoxy resin, EOCN-102S, EOCN-103S, EOCN-104S, EOCN-1012, EOCN-1025, EOCN-1027 made by Nippon Kayaku Co., Ltd., YDCN701, YDCN702, YDCN703, YDCN704, etc. Can be mentioned. As said polyfunctional epoxy resin, Epon 1031S by Mitsubishi Chemical Corporation, Araldite 0163 by Chiba Specialty Chemicals Corporation, Denacol EX-611, EX-614, EX-614B, EX-622 by Nagase Chemtex Corporation, EX-512, EX-521, EX-421, EX-411, EX-321, etc. are mentioned. As said amine epoxy resin, Epicoat 604 by Mitsubishi Chemical Corporation, YH-434 by Toto Chemical Co., Ltd., TETRAD-X and TETRAD-C by Mitsubishi Gas Chemical Co., Ltd., ELM-120 by Sumitomo Chemical Industries, Ltd., etc. are mentioned. Can be mentioned.

As said heterocyclic containing epoxy resin, Araldite PT810 by Chiba Specialty Chemicals Corporation, ERL4234, ERL4299, ERL4221, ERL4206 by UCC Corporation, etc. are mentioned. These epoxy resins can be used individually or in combination of 2 or more types.

In order to harden the said thermosetting resin, an additive can be added suitably. As such an additive, a hardening | curing agent, a hardening accelerator, a catalyst, etc. are mentioned, for example, In the case of adding a catalyst, a cocatalyst can be used as needed.

When using an epoxy resin for the said thermosetting resin, it is preferable to use an epoxy resin hardening | curing agent or a hardening accelerator, and it is more preferable to use these together. As a hardening | curing agent, a phenol resin, dicyan diamide, a boron trifluoride complex, an organic hydrazide compound, amines, a polyamide resin, an imidazole compound, a urea or a thiourea compound, a poly mercaptan compound, a mercapto group Polysulfide resin, an acid anhydride, and a photo-ultraviolet curing agent which have a at the terminal are mentioned. These can be used individually or in combination of 2 or more types.

Among these, examples of the boron trifluoride complex include boron trifluoride-amine complexes with various amine compounds (preferably primary amine compounds), and isophthalic acid dihydrazide is mentioned as the organic hydrazide compound. have.

Examples of the phenol resins include novolac phenol resins such as phenol novolak resins, phenol aralkyl resins, cresol novolak resins, tert-butyl phenol novolak resins and nonyl phenol novolak resins, resol type phenol resins, and poly Polyoxystyrene, such as paraoxystyrene, etc. are mentioned. Especially, the phenol type compound which has at least 2 phenolic hydroxyl group in a molecule | numerator is preferable.

As a phenolic compound which has at least 2 phenolic hydroxyl group in the said molecule | numerator, a phenol novolak resin, cresol novolak resin, t-butyl phenol novolak resin, dicyclo pentane cresol novolak resin, dicyclo penta Diene phenol novolak resin, xylene modified phenol novolak resin, naphthol novolak resin, trisphenol novolak resin, tetrakis phenol novolak resin, bisphenol A novolak resin, poly-p-vinyl phenol resin, phenol aralkyl resin, etc. Can be mentioned. Moreover, a phenol novolak resin and a phenol aralkyl resin are especially preferable among these phenol resins, and connection reliability can be improved.

Examples of the amines include linear aliphatic amines (diethylenetriamine, triethylenetetramine, hexamethylenediamine, N, N-dimethylpropylamine, benzyldimethylamine, 2- (dimethylamino) phenol, 2,4,6-tris ( Dimethylaminomethyl) phenol, m-xylenediamine, etc.), cyclic aliphatic amine (N-aminoethylpiperazine, bis (3-methyl-4-aminocyclohexyl) methane, bis (4-aminocyclohexyl) methane, menthenediamine , Isophoronediamine, 1,3-bis (aminomethyl) cyclohexane, etc.), heterocyclic amines (piperazine, N, N-dimethylpiperazine, triethylenediamine, melamine, guanamine, etc.), aromatic amines (metaphenyl Rendiamine, 4,4'-diaminodiphenylmethane, diamino, 4,4'-diaminodiphenylsulfone, etc.), polyamide resin (polyamide amine is preferred, and a condensate of dimer acid and polyamine), Diazole compounds (2-phenyl-4,5-dihydroxymethyl imidazole, 2-methylimidazole, 2,4-dimethyl Midazole, 2-n-heptadecyl imidazole, 1-cyanoethyl-2-undecyl imidazolium trimellitate, epoxy imidazole adduct, etc.), urea or thiourea compound (N, N-dialkyl urea) Compounds, N, N-dialkylthiourea compounds, etc.), polymercaptan compounds, polysulfide resins having a mercapto group at the terminal, acid anhydrides (such as tetrahydrophthalic anhydride), and photo-ultraviolet curing agents (diphenyl iodine Umhexafluorophosphoric acid, triphenylsulfonium hexafluorophosphoric acid, and the like).

There is no restriction | limiting in particular as said hardening accelerator as long as it hardens a thermosetting resin, For example, imidazole, dicyanic diamide derivative, dicarboxylic acid dihydrazide, triphenylphosphine, tetraphenyl phosphonium tetraphenyl borate, 2-ethyl-4-methylimidazole- tetraphenyl borate, a 1,8- diazabicyclo [5.4.0] undecene-7- tetraphenyl borate, etc. are mentioned.

As imidazole, imidazole, 2-methylimidazole, 2-ethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole , 1-benzyl-2-methylimidazole, 1-benzyl-2-ethylimidazole, 1-benzyl-2-ethyl-5-methylimidazole, 2-phenyl-4-methyl-5-hydroxy Dimethyl imidazole, 2-phenyl-4, 5- dihydroxymethyl imidazole, etc. are mentioned.

Content in the adhesive bond layer of the hardening | curing agent or hardening accelerator for epoxy resins is not specifically limited, The optimal content changes with kinds of hardening | curing agent or hardening accelerator.

It is preferable to mix | blend the compounding ratio of the said epoxy resin and a phenol resin so that the hydroxyl group in a phenol resin per 0.5 equivalent of epoxy groups in the said epoxy resin component may be 0.5-2.0 equivalent. More preferably, it is 0.8-1.2 equivalent. That is, when the compounding ratio of both is out of the above range, sufficient curing reaction does not proceed, and the characteristics of the adhesive layer easily deteriorate. In another embodiment, another thermosetting resin and a hardening | curing agent are 0.5-20 mass parts of hardening | curing agents with respect to 100 mass parts of thermosetting resins, and in another embodiment, a hardening | curing agent is 1-10 mass parts. It is preferable that content of a hardening accelerator is less than content of a hardening | curing agent, 0.001-1.5 mass parts of hardening accelerators are preferable with respect to 100 mass parts of thermosetting resins, and 0.01-0.95 mass parts is more preferable. By adjusting in the said range, progress of sufficient hardening reaction can be assisted. 0.001-1.5 mass parts is preferable with respect to 100 mass parts of thermosetting resins, and, as for content of a catalyst, 0.01-1.0 mass part is more preferable.

In addition, the adhesive bond layer 13 of this invention can mix | blend a filler suitably according to the use. This improves the dicing properties of the adhesive layer in the uncured state, improves handling properties, adjusts the melt viscosity, imparts thixotropic, imparts thermal conductivity to the cured adhesive layer, and improves the adhesive force. Is becoming possible.

As a filler used by this invention, an inorganic filler is preferable. There is no restriction | limiting in particular as an inorganic filler, For example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, alumina, aluminum nitride, aluminum borate whisker, boron nitride, crystalline Silica, amorphous silica, antimony oxide, etc. can be used. Moreover, these can also be used individually or in mixture of 2 or more types.

In addition, it is preferable to use alumina, aluminum nitride, boron nitride, crystalline silica, amorphous silica, etc. from the said inorganic filler from a viewpoint of thermal conductivity improvement. In addition, in view of adjustment of melt viscosity and provision of thixotropy, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, alumina, crystalline silica, amorphous silica and the like are used. It is preferable. Moreover, it is preferable to use alumina and a silica from a viewpoint of dicing improvement.

If the content rate of a filler is 30 mass% or more, it is excellent in the point of wire bonding property.

At the time of wire bonding, it is preferable that the storage elastic modulus after hardening of the adhesive bond layer which adhere | attaches the chip | tip which beats a wire is adjusted to the range of 20-1000 MPa at 170 degreeC, and if the content rate of a filler is 30 mass% or more, hardening of an adhesive bond layer It is easy to adjust the storage elastic modulus in this range. Moreover, when the content rate of a filler is 75 mass% or less, it is excellent in the film formability and the heating fluidity of an adhesive bond layer at the time of die bonding. When the heat fluidity of an adhesive bond layer improves at the time of die bonding, adhesiveness of an adhesive bond layer and a to-be-adhered body will become favorable, an adhesive force can be improved, and it will become easy to suppress a cavity by burying the unevenness | corrugation of a to-be-adhered body. More preferably, it is 70 mass% or less, More preferably, it is 60 mass% or less.

The adhesive bond layer of this invention can contain 2 or more types of fillers from which an average particle diameter differs as said filler. In this case, compared with the case of using a single filler, it is easy to prevent the viscosity increase when the filler content is high or the viscosity decrease when the filler content is low in the raw material mixture before film formation, and to obtain good film formability. In addition, the fluidity of the uncured adhesive layer can be optimally controlled, and excellent adhesion can be easily obtained after curing of the adhesive layer.

Moreover, it is preferable that the average particle diameter of a filler is 2.0 micrometers or less, and, as for the adhesive bond layer of this invention, it is more preferable that it is 1.0 micrometer. When the average particle diameter of a filler is 2.0 micrometers or less, thinning of a film becomes easy. Here, a thin film suggests the thickness of 20 micrometers or less. Moreover, if it is 0.01 micrometer or more, dispersibility is favorable.

In addition, from the viewpoint of preventing the viscosity increase or decrease of the raw material mixture before film formation, optimally controlling the fluidity of the uncured adhesive layer, and improving the adhesive strength after curing of the adhesive layer, the average particle diameter is within the range of 0.1 to 1.0 μm. It is preferable to include the 1st filler which exists and the 2nd filler whose average particle diameter of a primary particle size exists in the range of 0.005-0.03 micrometer. The average particle diameter is in the range of 0.1 to 1.0 µm, and the first filler in which 99% or more of particles are distributed in the range of particle size of 0.1 to 1.0 µm, and the average particle diameter of the primary particle diameter are in the range of 0.005 to 0.03 µm, It is preferable that 99% or more of particle | grains contain the 2nd filler distributed in the range of particle size 0.005-0.1 micrometer.

The average particle diameter in the present invention means the D50 value of the cumulative volume distribution curve in which 50% by volume of the particles have a diameter smaller than this value. In this invention, an average particle diameter or D50 value is measured by the laser diffraction method, for example using Malvern Mastersizer 2000 by Malvern Instruments. In this technique, the size of the particles in the dispersion is measured using diffraction of the laser beam, based on either application of Fraunhofer or Mie theory. The present invention relates to scattering measurement at 0.02 to 135 degrees with respect to the incident laser beam, using an unused theory or a modified unused theory for non-spherical particles.

In this invention, in one aspect, the thermoplastic resin whose weight average molecular weights are 10-40 mass% is 5000-200,000 with respect to the whole adhesive composition which comprises the adhesive bond layer 13, and a 10-40 mass% thermopolymerizable component. And a filler of 30 to 75% by mass may be included. In this embodiment, 30-60 mass% may be sufficient as content of a filler, and 40-60 mass% may be sufficient as it.

Moreover, 5000-150,000 may be sufficient as the mass mean molecular weight of a thermoplastic resin, and 10,000-100,000 may be sufficient as it.

In another aspect, the thermoplastic resin whose weight average molecular weights are 100,000-20 mass% with respect to the whole adhesive composition which comprises the adhesive bond layer 13 is 200,000-20,000,000, a 20-50 mass% thermopolymerizable component, and 30-75 mass You may also include% filler. In this embodiment, 30-60 mass% may be sufficient as content of a filler, and 30-50 mass% may be sufficient as it. The mass average molecular weight of the thermoplastic resin may be 200,000 to 1,000,000, or 200,000 to 800,000.

By adjusting the blending ratio, the storage elastic modulus and the fluidity of the adhesive layer 13 after curing can be optimized, and the heat resistance at a high temperature also tends to be sufficiently obtained.

In the tape 10 for semiconductor processing of this invention, the adhesive bond layer 13 may be formed by laminating the film form previously (henceforth an adhesive film) on the base film 11 directly or indirectly. The temperature at the time of lamination is made into the range of 10-100 degreeC, and it is preferable to add the linear pressure of 0.01-10 N / m. In addition, this adhesive film may be the one in which the adhesive bond layer 13 was formed on the peeling film, and in that case, the peeling film may be peeled off after lamination, or it may be used as a cover film of the tape 10 for a semiconductor process, and a wafer You may peel off when bonding.

Although the said adhesive film may be laminated | stacked on the whole surface of the adhesive layer 12, you may laminate | stack the adhesive film cut | disconnected (precut) to the adhesive layer 12 in the shape according to the wafer previously bonded. Thus, when laminating | stacking the adhesive film which concerns on a wafer, as shown in FIG. 3, the adhesive bond layer 13 exists in the part to which the wafer W is bonded, and the adhesive bond layer 13 in the part to which the ring frame 20 is bonded. ), Only the adhesive layer 12 is present. In general, since the adhesive layer 13 is difficult to peel off from the adherend, the ring frame 20 can be bonded to the pressure-sensitive adhesive layer 12 by using a precut adhesive film, and the ring at the time of peeling off the tape after use The effect which does not generate | occur | produce pull residue to the frame 20 well can be obtained.

<Applications>

The tape 10 for semiconductor processing of this invention is used for the manufacturing method of the semiconductor device containing the expansion process which partly divides the adhesive bond layer 13 by at least expansion. Therefore, other processes, the order of the process, and the like are not particularly limited. For example, it can use suitably with the manufacturing methods (A)-(E) of the following.

Manufacturing method of semiconductor device (A)

(a) bonding the surface protection tape to the wafer surface on which the circuit pattern is formed;

(b) a backgrinding process for grinding the back surface of the wafer,

(c) bonding the adhesive layer of the tape for semiconductor processing to the back surface of the wafer while the wafer is heated;

(d) peeling off the surface protection tape from the wafer surface;

(e) irradiating a laser beam to a portion to be divided of the wafer to form a modified region by multiphoton absorption in the wafer,

(f) an expansion step of dividing the adhesive layer of the wafer and the semiconductor processing tape along a dividing line by expanding the semiconductor processing tape to obtain a plurality of chips with the adhesive layer;

(g) In the semiconductor processing tape after expansion, by heating and shrinking a portion that does not overlap with the chip, the loosening generated in the expansion step is removed to maintain the gap between the chips;

(h) A method for manufacturing a semiconductor device, comprising the step of picking up the chip with the adhesive layer from the pressure-sensitive adhesive layer of the tape for semiconductor processing.

Manufacturing method of semiconductor device (B)

(a) bonding the surface protection tape to the wafer surface on which the circuit pattern is formed;

(b) a backgrinding process for grinding the back surface of the wafer,

(c) bonding the adhesive layer of the tape for semiconductor processing to the back surface of the wafer while the wafer is heated;

(d) peeling off the surface protection tape from the wafer surface;

(e) irradiating a laser beam along a dividing line on the wafer surface to divide the wafer into chips;

(f) an expansion step of dividing the adhesive layer for each chip by expanding the tape for semiconductor processing to obtain a plurality of chips with the adhesive layer;

(g) In the semiconductor processing tape after expansion, by heating and shrinking a portion that does not overlap with the chip, the loosening generated in the expansion step is removed to maintain the gap between the chips;

(h) picking up the chip with the adhesive layer from the pressure-sensitive adhesive layer of the tape for semiconductor processing;

Wherein the semiconductor device is a semiconductor device.

(C) Method of Manufacturing Semiconductor Device

(a) bonding the surface protection tape to the wafer surface on which the circuit pattern is formed;

(b) a backgrinding process for grinding the back surface of the wafer,

(c) bonding the adhesive layer of the tape for semiconductor processing to the back surface of the wafer while the wafer is heated;

(d) peeling off the surface protection tape from the wafer surface;

(e) cutting the wafer along a dividing line using a dicing blade and dividing the wafer into chips;

(f) an expansion step of dividing the adhesive layer for each chip by expanding the tape for semiconductor processing to obtain a plurality of chips with the adhesive layer;

(g) In the semiconductor processing tape after expansion, by heating and shrinking a portion that does not overlap with the chip, the loosening generated in the expansion step is removed to maintain the gap between the chips;

(h) picking up the chip with the adhesive layer from the pressure-sensitive adhesive layer of the tape for semiconductor processing,

Wherein the semiconductor device is a semiconductor device.

Manufacturing method of semiconductor device (D)

(a) bonding a dicing tape to the back surface of the wafer on which the circuit pattern is formed, and using a dicing blade, cutting the dicing tape down to a depth less than the thickness of the wafer along a scheduled division line;

(b) bonding a surface protection tape to the wafer surface;

(c) a backgrinding step of peeling off the dicing tape, grinding the back surface of the wafer and dividing it into chips;

(d) bonding the adhesive layer of the tape for semiconductor processing to the back surface of the wafer segmented with the chip while the wafer is heated;

(e) peeling a surface protection tape from the surface of the wafer segmented with the chip;

(f) an expansion step of dividing the adhesive layer for each chip by expanding the semiconductor processing tape to obtain a plurality of chips with the adhesive layer;

(g) In the semiconductor processing tape after expansion, a step of removing the looseness generated in the expansion step by heating and shrinking a portion that does not overlap with the chip to maintain the gap between the chips;

(h) The manufacturing method of a semiconductor device including the process of picking up the said chip | tip with an adhesive bond layer from the adhesive layer of the said tape for a semiconductor process.

Manufacturing method of semiconductor device (E)

(a) bonding the surface protection tape to the wafer surface on which the circuit pattern is formed;

(b) irradiating a laser beam onto a portion to be divided of the wafer to form a modified region by multiphoton absorption in the wafer;

(c) a backgrinding process for grinding the back surface of the wafer,

(d) bonding the adhesive layer of the tape for semiconductor processing to the back surface of the wafer while the wafer is heated;

(e) peeling the surface protection tape from the wafer surface;

(f) an expansion step of dividing the adhesive layer of the wafer and the semiconductor processing tape along a dividing line by expanding the semiconductor processing tape to obtain a plurality of chips with the adhesive layer;

(g) In the semiconductor processing tape after expansion, by heating and shrinking a portion that does not overlap with the chip, the loosening generated in the expansion step is removed to maintain the gap between the chips;

(h) picking up the chip with the adhesive layer from the pressure-sensitive adhesive layer of the tape for semiconductor processing,

Wherein the semiconductor device is a semiconductor device.

<How to use>

The use method of the tape at the time of applying the tape 10 for semiconductor processing of this invention to the manufacturing method (A) of the said semiconductor device is demonstrated, referring FIGS. First, as shown in FIG. 2, the back which grinds the back surface of the wafer W by pasting together the surface protection tape 14 for circuit pattern protection containing the ultraviolet curable component in an adhesive on the surface of the wafer W in which the circuit pattern was formed. Grind process is performed.

After completion of the backgrinding step, as shown in FIG. 3, the wafer W is placed on the heater table 25 of the wafer mounter with the surface side down, and then a tape for semiconductor processing (see FIG. 10). The tape 10 for semiconductor processing used here is the lamination | stacking of the adhesive film cut | disconnected (precut) in the shape according to the wafer W to bond together, and the adhesive bond layer 13 has the surface bonded together with the wafer W The adhesive layer 12 is exposed around the exposed area | region. The portion where the adhesive layer 13 of the tape 10 for semiconductor processing is exposed and the back surface of the wafer W are bonded together, and the portion where the adhesive layer 12 around the adhesive layer 13 is exposed and the ring frame 20 are exposed. To work). At this time, the heater table 25 is set to 70-80 degreeC, and heat bonding is performed by this. In addition, in this embodiment, it has the adhesive tape 15 which consists of the adhesive film 12 provided on the base film 11 and the base film 11, and the adhesive bond layer 13 provided on the adhesive layer 12. Although the tape 10 for semiconductor processing was used, you may use an adhesive tape and a film adhesive each. In this case, first, a film adhesive is bonded together to the back surface of a wafer, an adhesive bond layer is formed, and the adhesive layer of an adhesive tape is stuck together on this adhesive bond layer. At this time, the adhesive tape 15 which concerns on this invention is used as an adhesive tape.

Next, the wafer W on which the semiconductor processing tape 10 is bonded is taken out from the heater table 25, and as shown in FIG. 4, the semiconductor processing tape 10 side is faced down on the suction table 26. Wit on. And the ultraviolet-ray of 1000 mJ / cm <2> is irradiated to the base surface side of the surface protection tape 14 using the energy ray light source 27 from the upper side of the wafer W adsorbed and fixed to the adsorption table 26, for example. And the adhesive force with respect to the wafer W of the surface protection tape 14 is reduced, and the surface protection tape 14 is peeled off from the surface of the wafer W. As shown in FIG.

Next, as shown in FIG. 5, the laser beam is irradiated to the division plan part of the wafer W, and the modified region 32 by multiphoton absorption is formed in the inside of the wafer W. As shown in FIG.

Next, as shown in Fig. 6A, the stage 21 of the expansion apparatus is used with the tape 10 for semiconductor processing, on which the wafer W and the ring frame 20 are bonded, with the base film 11 side down. )).

Then, as shown in Fig. 6B, in the state where the ring frame 20 is fixed, the hollow cylindrical pressure member 22 of the expansion device is raised to expand the semiconductor processing tape 10 (expand). do. As expansion conditions, an expansion speed is 5-500 mm / sec, for example, and an expansion amount (pressure amount) is 5-25 mm, for example. As described above, the tape 10 for semiconductor processing extends in the radial direction of the wafer W, so that the wafer W is divided into chips 34 based on the modified region 32 as a starting point. At this time, extension (deformation) due to expansion is suppressed at the portion of the adhesive layer 13 adhering to the back surface of the wafer W, and no fracture occurs, but tension due to expansion of the tape is concentrated at the positions between the chips 34. By breaking. Therefore, as shown in FIG.6 (c), the adhesive bond layer 13 is also segmented with the wafer W. FIG. Thereby, the some chip | tip 34 with the adhesive bond layer 13 can be obtained.

Then, as shown in FIG. 7, the pressure member 22 is returned to its original position, and the looseness of the tape 10 for semiconductor processing generated in the expansion step is removed to stably maintain the gap between the chips 34. Carry out the process. In this step, for example, a hot air nozzle (for example) is used in the region where the chip 34 exists in the tape 10 for semiconductor processing and the round annular heat shrinkage region 28 between the ring frame 20. The substrate film 11 is heated and shrunk with a warm air of 90 to 120 ° C. using 29), and the tape 10 for semiconductor processing is placed in a stretched state.

Thereafter, the pressure-sensitive adhesive layer 12 is subjected to an energy ray curing treatment, a thermosetting treatment, or the like to weaken the adhesive force to the adhesive layer 13 of the pressure-sensitive adhesive layer 12, and then picks up the chip 34.

Moreover, as mentioned above, it is also possible to perform an energy-beam hardening process before performing an expansion process, and it is preferable.

<Examples>

Next, although an Example and a comparative example are demonstrated in detail in order to make the effect of this invention clearer, this invention is not limited to these Examples.

[Production of tape for semiconductor processing]

(1) Production of base film

<Base film 1>

Zinc ionomer a (density 0.96 g / cm ³ , zinc ion content 4 mass%, chlorine content of ethylene-methacrylic acid-ethyl methacrylate (mass ratio 8: 1: 1) ternary copolymer synthesize | combined by the radical polymerization method) Substrate film 1 was produced by melting resin beads of less than 1% by mass, Vicat softening point 56 ° C and melting point 86 ° C.) at 140 ° C., and molding into an elongated film having a thickness of 100 μm using an extruder.

<Base film 2>

Compound ratio which shows styrene-water addition isoprene-styrene block copolymer (SEPS) (made by Kuraray Co., Ltd., "Septon KF-2104") and homopropylene (PP) (made by Ubekosan Co., Ltd., "J-105G") at 40:60. Was mixed with each other, and processed by film extrusion at a temperature of about 200 ° C. with a twin-screw kneader to prepare a base film 2 having a thickness of 100 μm.

<Base film 3>

Compound ratio which shows styrene-water addition isoprene-styrene block copolymer (SEPS) (made by Kuraray Co., Ltd., "Septon KF-2104") and homopropylene (PP) (made by Ubekosan Co., Ltd., "J-105G") at 40:60. The base film 3 was produced by mixing with the and using the extruder and shape | molding it into the long film shape of thickness 100micrometer.

(2) Adjustment of the pressure-sensitive adhesive composition

(a-1)

As an acrylic copolymer (A1) which has a functional group, it consists of 2-ethylhexyl acrylate, 2-hydroxy ethyl acrylate, and methacrylic acid, and the ratio of 2-ethylhexyl acrylate is 55 mol% and the mass mean molecular weight 750,000 A copolymer was prepared. Then, 2-isocyanate ethyl methacrylate was added so that an iodine number might be 30, and the acrylic copolymer (a-1) of glass transition temperature of -50 degreeC, a hydroxyl value of 30 mgKOH / g, and an acid value of 5 mgKOH / g was prepared. .

(a-2)

As an acryl-type copolymer (A1) which has a functional group, it consists of butyl acrylate, 4-hydroxy butyl acrylate, and methacrylic acid, The ratio of butyl acrylate was 60 mol%, and the copolymer of 500,000 mass average molecular weights was prepared. Then, 2-isocyanate ethyl methacrylate was added so that an iodine value might be 30, and the acrylic copolymer (a-2) of glass transition temperature of -56 degreeC, a hydroxyl value of 30 mgKOH / g, and an acid value of 5 mgKOH / g was prepared. .

(3) Preparation of Adhesive Composition

(b-1)

50 mass parts of epoxy resins "1002" (made by Mitsubishi Chemical Corporation, solid bisphenol A type epoxy resin, epoxy equivalent 600), epoxy resin "806" (Mitsubishi Chemical Corporation make brand name, bisphenol F type epoxy resin, epoxy equivalent) 160, specific gravity 1.20) 100 parts by mass, 5 parts by mass of a curing agent "Dyhard100SF" (trade name, Dicyane diamide made by DEG Corporation), silica filler "SO-C2" (product made by Admafine Co., Ltd., brand name, average particle diameter: 0.5 μm) 150 MEK was added to the composition which consists of 5 mass parts of mass parts and "Aerosil R972" (Aerosil Co., Ltd. brand name, 0.016 micrometer of primary particle diameters) which are silica fillers, and it stirred and mixed, and is uniform. It was set as the composition.

Here, as 100 mass parts of phenoxy resin "PKHH" (brand name made by INCHEM, mass mean molecular weight 52,000, glass transition temperature 92 degreeC), a coupling agent, "KBM-802" (Shin-Etsu Silicone Co., Ltd. brand name, mercapto propyl tree) Methoxysilane) 0.4 mass part and "Quazole 2 PHZ-PW" as a hardening accelerator (Shikoku Kasei Co., Ltd. brand name, 2-phenyl-4,5-dihydroxymethyl imidazole, decomposition temperature 230 degreeC) 0.5 The mass part was added and stirred and mixed until it became uniform. The varnish of the adhesive composition (b-1) was obtained by further filtering this with a 100 mesh filter and vacuum degassing.

(b-2)

20.0 parts by mass of epoxy resin "YX4000" (made by Mitsubishi Chemical Corporation, biphenyl novolak-type epoxy resin, epoxy equivalent 185), phenol resin "LF-6161" (DIC Corporation make brand name, novolak phenol resin, hydroxyl group) Equivalent 118) 50.0 mass parts, epoxy resin "epicoat 828" (Mitsubishi Chemical Corporation make, brand name, bisphenol A type epoxy resin, epoxy equivalent 190) 45.0 weight part, "aerosil R972" which is silica filler MEK was added to the composition which consists of 5 mass parts of brand names of Erogil Co., Ltd., and the average particle diameter of a primary particle diameter, and it stirred, and made it the uniform composition.

As a polymer containing a functional group, 70 mass parts of acrylic copolymers (weight average molecular weight 850,000, Tg 12 degreeC) containing a monomeric unit derived from glycidyl acrylate or glycidyl methacrylate as a coupling agent here 0.5 mass part of "KBM-802" (brand name made by Shin-Etsu Silicone Co., Ltd., mercapto propyl trimethoxysilane), and "cuazole 2 PHZ-PW" as a hardening accelerator (trade name, 2-phenyl made by Shikoku Kasei Co., Ltd.) 0.1 mass part of -4, 5- dihydroxymethyl imidazole and decomposition temperature 230 degreeC) were added, and it stirred and mixed until it became uniform. The varnish of the adhesive composition (b-2) was obtained by further filtering this with a 100 mesh filter and vacuum degassing.

(Adjustment of Semiconductor Processing Tape)

3 mass parts of P301-75E (made by Asahi Chemical Co., Ltd.) was added as a polyisocyanate with respect to 100 mass parts of acryl-type copolymer (a-1), and 3 mass parts of Esacure KIP'150 (made by Amberti) was added as a photoinitiator. Was dissolved in ethyl acetate and stirred to prepare an adhesive composition.

Subsequently, the pressure-sensitive adhesive composition was coated on a release liner made of a polyethylene-terephthalate film subjected to a release treatment so as to have a thickness of 10 μm after drying, and dried at 110 ° C. for 2 minutes, followed by adhering to the base film 1. The adhesive sheet in which the adhesive layer was formed on the film 1 was produced.

Next, the adhesive composition (b-1) was coated on a release liner made of a polyethylene-terephthalate film subjected to a release treatment so as to have a thickness of 20 μm after drying, and dried at 130 ° C. for 3 minutes to form an adhesive layer on the release liner. This formed adhesive film was produced.

The adhesive sheet was cut out to the shape shown in FIG. 3 etc. which can be stuck so that an opening part may be covered with respect to a ring frame. In addition, the adhesive film was cut out in the shape shown in FIG. 3 etc. which may cover the wafer back surface. And the adhesive layer side of the said adhesive sheet and the adhesive bond layer side of the said adhesive film were bonded together so that the part which the adhesive layer 12 exposes may be formed around the adhesive film as shown in FIG. 3 etc., and the tape 1 for a semiconductor process was produced. .

Except having made the combination of an acryl-type copolymer, an adhesive composition, a crosslinking agent, and an adhesive composition shown in Table 1, the tapes for semiconductor processing 2-9 were produced by the method similar to the tape 1 for semiconductor processing.

&Lt; Example 1 &gt;

A surface protection tape is bonded to the wafer surface on which the circuit pattern is formed,

Irradiating a laser beam onto a portion to be divided of the wafer to form a modified region by multiphoton absorption in the wafer,

Performing a backgrinding process for grinding the wafer back surface,

Bonding the adhesive layer of the said tape for a semiconductor process to the back surface of the said wafer in the state heated the said wafer to 70-80 degreeC,

Peeling the surface protection tape from the wafer surface,

UV irradiation treatment is performed on the tape for semiconductor processing at an output of 200 mJ / cm 2,

By expanding the semiconductor processing tape, the adhesive layer of the wafer and the semiconductor processing tape is divided along a dividing line, and an expansion step of obtaining a plurality of chips with the adhesive layer is performed.

By heating and shrinking the portion of the semiconductor processing tape that does not overlap with the chip (the area where the chip exists and the ring-shaped area between the ring frame) to 100 ° C., the looseness generated in the expansion process is removed, and the gap between the chips The physical properties shown below were evaluated about the tape for a semiconductor process which performed the process which hold | maintains. In addition, the chip size is 5 mm x 5 mm.

<Shrinkage rate evaluation>

The test piece of tape was held for 60 seconds at a rate of 20 mm at 500 mm / min by the method specified in JIS 7162. Thereafter, the test pieces were removed by a tester, and heated at 100 ° C for 10 seconds to measure the heat shrinkage before and after.

Moreover, the shrinkage rate of the width direction and the longitudinal direction was also measured.

<Evaluation of pickup property>

The process of picking up a semiconductor chip from the adhesive layer of the tape for a semiconductor process was performed, and pick-up property was evaluated.

Specifically, a pickup test was conducted with a die picker device (trade name CAP-300 II, manufactured by Canon Machinery Co., Ltd.) on 1000 arbitrary chips, and the pickup was successful that the adhesive layer peeled from the pressure-sensitive adhesive layer was maintained. Pickup success rate was calculated and pick-up property was evaluated.

Picking up success rate is 100% as a good product "◎",

It is 98% or more as a good product, "○",

95% or more and less than 98% as an allowable product "△",

When it was less than 95% and evaluated as the defective product, it evaluated by "x", but the pick-up rate showed 100%.

<Evaluation of Uniformity of Cuff Width>

The uniformity of the cuff width was evaluated by the following method and criteria.

In the 12-inch wafer, the cuff widths of the five points in the longitudinal direction and the width direction of the top, bottom, center, leftmost and rightmost portions of the effective chip (5 mm x 5 mm) were measured,

Uniformity of cuff width = (minimum measured value-average value among 5 points) / numerical value of average value

More than -0.3 `` ◎ '',

-0.5 or more and less than -0.3 `` ○ '',

More than -0.7 and less than -0.5 "△"

Although less than -0.7 was evaluated by "x", the "◎" evaluation was shown.

<Example 2>

The semiconductor processing tape 2 WHEREIN: The same process as Example 1 was performed except having changed the ultraviolet-ray output into 30mJ / cm <2> of output, and the shrinkage rate and pick-up property were evaluated.

<Example 3>

The semiconductor processing tape 3 WHEREIN: The same process as Example 1 was performed except having performed the heat set process, and shrinkage rate and pick-up property were evaluated.

<Example 4>

In the semiconductor processing tape 4, the same treatment as in Example 1 was carried out to evaluate the shrinkage ratio and the pick-up property.

(Comparative Example 1)

A surface protection tape is bonded to the wafer surface on which the circuit pattern is formed,

Irradiating a laser beam onto a portion to be divided of the wafer to form a modified region by multiphoton absorption in the wafer,

Performing a backgrinding process for grinding the wafer back surface,

Bonding the adhesive layer of the said tape for a semiconductor process to the back surface of the said wafer in the state heated the said wafer to 70-80 degreeC,

Peeling the surface protection tape from the wafer surface,

By expanding the semiconductor processing tape 5, the adhesive layer of the wafer and the semiconductor processing tape is divided along the dividing line, and an expansion step of obtaining a plurality of chips with the adhesive layer is performed.

The chip (the round annular region between the region where the chip is present and the ring frame) that does not overlap with the chip of the semiconductor processing tape 5 is heated and contracted to 120 ° C. to remove the looseness generated in the expansion process, thereby removing the chip. The process of maintaining the interval,

The physical property evaluation and pick-up property similar to Example 1 were evaluated about the tape 5 for semiconductor processing which performed the ultraviolet irradiation process to the said tape 5 for semiconductor processing at the output 200mJ / cm <2>.

(Comparative Example 2)

About the tape 6 for semiconductor processing, the same process as the comparative example 1 was performed, and shrinkage rate and pick-up property were evaluated.

(Comparative Example 3)

In the tape 7 for semiconductor processing, the shrinkage rate and pick-up property were evaluated similarly to Example 1 except having changed the output of an ultraviolet-ray into 20mJ / cm <2>.

(Comparative Example 4)

In the tape 8 for semiconductor processing, the same process as the comparative example 1 was performed except having changed the addition amount of the hardening | curing agent into 20 mass parts, and the shrinkage rate and pick-up property were evaluated.

(Comparative Example 5)

Tape 9 for semiconductor processing WHEREIN: The same process as the comparative example 1 was performed except having performed the heat set process at the temperature of 50 degreeC, and the shrinkage rate and pick-up property were evaluated.

The shrinkage rate, pick-up property, and cuff width uniformity evaluation in Examples 1 to 4 and Comparative Examples 1 to 5 are shown in Table 2.

[Table 1]

[Table 2]

&Lt; Evaluation result &gt;

As shown in Table 2, Examples 1 to 5 in which the heat shrinkage is 0% or more and 20% or less, and the heat shrinkage in the longitudinal direction / heat shrinkage in the width direction = 0.01 or more and 100 or less are sufficient and uniformly in the cuff width. It became clear that it showed the favorable pick-up property which there is not in the prior art.

On the other hand, Comparative Examples 1-5 which do not satisfy the said conditions did not become narrow or uniform in the cuff width, and showed the evaluation which is inferior to pickup property.

10 tape for semiconductor processing
11: Base film
12: adhesive layer
13: adhesive layer
14 surface protection tape
15: Auxiliary tape
20: Ring frame
21: Stage
22: pressure member
25: Heater table
26: adsorption table
27: Ultraviolet (energy ray) light source
28: heating shrinkage area
29: Warm air nozzle
32: modified area
34 ： Chip

Claims (8)

The heat shrinkage ratio in both the longitudinal direction and the width direction of the tape when heated at 100 ° C. for 10 seconds is 0% or more and 20% or less,
Only one of the heat shrinkage in the longitudinal direction and the heat shrinkage in the width direction is 7% or more, and
Heat shrinkage ratio in the longitudinal direction / heat shrinkage ratio in the width direction = 0.01 to 100, characterized in that the tape for semiconductor processing.
(Shrinkage ratio = (Dimension before heating-Dimension after heating) / Dimension before heating × 100 (%)) The method of claim 1,
The semiconductor processing tape,
(a) bonding the surface protection tape to the wafer surface on which the circuit pattern is formed;
(b) a backgrinding process for grinding the back surface of the wafer,
(c) bonding the adhesive layer of the tape for semiconductor processing to the back surface of the wafer while the wafer is heated;
(d) peeling off the surface protection tape from the wafer surface;
(e) irradiating a laser beam to a portion to be divided of the wafer to form a modified region by multiphoton absorption in the wafer,
(f) an expansion step of dividing the adhesive layer of the wafer and the semiconductor processing tape along a dividing line by expanding the semiconductor processing tape to obtain a plurality of chips with the adhesive layer;
(g) in the semiconductor processing tape after expansion, heating and shrinking a portion not overlapping with the chip to remove looseness generated in the expansion step to maintain the gap between the chips;
(h) It is used for the manufacturing method of the semiconductor device including the process of picking up the said chip | tip with the said adhesive bond layer from the adhesive layer of the said semiconductor processing tape, The semiconductor processing tape characterized by the above-mentioned. The method of claim 1,
The semiconductor processing tape,
(a) bonding the surface protection tape to the wafer surface on which the circuit pattern is formed;
(b) a backgrinding process for grinding the back surface of the wafer,
(c) bonding the adhesive layer of the tape for semiconductor processing to the back surface of the wafer while the wafer is heated;
(d) peeling off the surface protection tape from the wafer surface;
(e) irradiating a laser beam along a dividing line on the wafer surface to divide the wafer into chips;
(f) an expansion step of dividing the adhesive layer for each chip by expanding the tape for semiconductor processing to obtain a plurality of chips with the adhesive layer;
(g) in the semiconductor processing tape after expansion, heating and shrinking a portion not overlapping with the chip to remove looseness generated in the expansion step to maintain the gap between the chips;
(h) It is used for the manufacturing method of a semiconductor device including the process of picking up the said chip | tip with the said adhesive bond layer from the adhesive layer of the said semiconductor processing tape, The semiconductor processing tape characterized by the above-mentioned. The method of claim 1,
The semiconductor processing tape,
(a) bonding the surface protection tape to the wafer surface on which the circuit pattern is formed;
(b) a backgrinding process for grinding the back surface of the wafer,
(c) bonding the adhesive layer of the tape for semiconductor processing to the back surface of the wafer while the wafer is heated;
(d) peeling off the surface protection tape from the wafer surface;
(e) cutting the wafer along a dividing line using a dicing blade to divide the wafer into chips;
(f) an expansion step of dividing the adhesive layer for each chip by expanding the tape for semiconductor processing to obtain a plurality of chips with the adhesive layer;
(g) in the semiconductor processing tape after expansion, heating and shrinking a portion not overlapping with the chip to remove looseness generated in the expansion step to maintain the gap between the chips;
(h) It is used for the manufacturing method of a semiconductor device including the process of picking up the said chip | tip with the said adhesive bond layer from the adhesive layer of the said semiconductor processing tape, The semiconductor processing tape characterized by the above-mentioned. The method of claim 1,
The semiconductor processing tape,
(a) bonding a dicing tape to the back surface of the wafer on which the circuit pattern is formed, and cutting it to a depth less than the thickness of the wafer along a scheduled dividing line using a dicing blade;
(b) bonding a surface protection tape to the wafer surface;
(c) a backgrinding process in which the dicing tape is peeled off, the back surface of the wafer is ground and divided into chips;
(d) bonding the adhesive layer of the tape for semiconductor processing to the back surface of the wafer segmented with the chip while the wafer is heated;
(e) peeling a surface protection tape from the surface of the wafer segmented with the chip;
(f) an expansion step of dividing the adhesive layer for each chip by expanding the tape for semiconductor processing to obtain a plurality of chips with the adhesive layer;
(g) in the semiconductor processing tape after expansion, heating and shrinking a portion that does not overlap with the chip to remove looseness generated in the expansion step to maintain the gap between the chips;
(h) It is used for the manufacturing method of a semiconductor device including the process of picking up the said chip | tip with an adhesive bond layer from the adhesive layer of the said semiconductor processing tape, The semiconductor processing tape characterized by the above-mentioned. The method of claim 1,
The semiconductor processing tape,
(a) bonding the surface protection tape to the wafer surface on which the circuit pattern is formed;
(b) irradiating a laser beam onto a portion to be divided of the wafer to form a modified region by multiphoton absorption in the wafer;
(c) a backgrinding process for grinding the back surface of the wafer,
(d) bonding the adhesive layer of the tape for semiconductor processing to the back surface of the wafer while the wafer is heated;
(e) peeling the surface protection tape from the wafer surface;
(f) an expansion step of dividing the adhesive layer of the wafer and the semiconductor processing tape along a dividing line by expanding the semiconductor processing tape to obtain a plurality of chips with the adhesive layer;
(g) in the semiconductor processing tape after expansion, heating and shrinking a portion that does not overlap with the chip to remove looseness generated in the expansion step to maintain the gap between the chips;
(h) It is used for the manufacturing method of a semiconductor device including the process of picking up the said chip | tip with the said adhesive bond layer from the adhesive layer of the said semiconductor processing tape, The semiconductor processing tape characterized by the above-mentioned. The method of claim 1,
Any one of the heat shrinkage rate in a longitudinal direction and the width direction is 0.1% or more, The tape for a semiconductor process. The semiconductor device which uses the tape for semiconductor processing as described in any one of Claims 1-7.

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