JP2019176158A - Semiconductor processing tape - Google Patents

Abstract

To provide a semiconductor processing tape which can be sufficiently heated and shrunk in a short time and can maintain a kerf width.SOLUTION: A semiconductor processing tape 10 according to the present invention includes an adhesive tape 15 including a base film 11 and an adhesive layer 12 formed on at least one side of the base film 11, and in the adhesive tape 15, the sum of an average value of the thermal deformation rates at every 1°C between 40°C and 80°C measured at the temperature rise with a thermomechanical property tester in the MD direction and an average value of the thermal deformation rate at every 1°C between 40°C and 80°C measured at the temperature rise with the thermomechanical property tester in the TD direction is a negative value.SELECTED DRAWING: Figure 1

Description

  INDUSTRIAL APPLICABILITY The present invention can be used to fix a wafer in a dicing process for dividing a wafer into chip-shaped elements, and further, a die bonding process for bonding between a chip after dicing or between a chip and a substrate, The present invention relates to an expandable semiconductor processing tape that can be used in a mounting process and can also be used in a process of dividing an adhesive layer along a chip by an expand.

  Conventionally, in the manufacturing process of a semiconductor device such as an integrated circuit (IC: Integrated Circuit), a back grinding process for grinding the back surface of the wafer in order to thin the wafer after forming the circuit pattern, and adhesive and stretchable on the back surface of the wafer. After pasting a certain semiconductor processing tape, a dicing process for dividing the wafer into chips, an expanding process for expanding the semiconductor processing tape, a pickup process for picking up the divided chips, and a picked-up chip A die bonding (mounting) step of bonding to a lead frame or a package substrate (or stacking and bonding chips in a stacked package) is performed.

  In the back grinding process, a surface protection tape is used to protect the circuit pattern forming surface (wafer surface) of the wafer from contamination. When this surface protection tape is peeled off from the wafer surface after the backside grinding of the wafer is completed, the semiconductor processing tape (dicing / die bonding tape) described below is bonded to the backside of the wafer and then applied to the suction table for semiconductor processing. The tape side is fixed, the surface protective tape is subjected to a treatment for reducing the adhesive strength to the wafer, and then the surface protective tape is peeled off. The wafer from which the surface protection tape has been peeled is then picked up from the suction table in a state where the wafer is bonded to the back surface, and is subjected to the next dicing process. In addition, when the surface protection tape is made of an energy ray curable component such as ultraviolet rays, the treatment for reducing the adhesive force is an energy ray irradiation treatment, and when the surface protection tape is made of a thermosetting component, Heat treatment.

  In the dicing process to the mounting process after the back grinding process, a semiconductor processing tape in which an adhesive layer and an adhesive layer are laminated in this order on a base film is used. In general, when using such a tape for semiconductor processing, first, an adhesive layer of the semiconductor processing tape is bonded to the back surface of the wafer to fix the wafer, and the wafer and the adhesive layer are chipped using a dicing blade. Dicing into units. Thereafter, an expanding process is performed to expand the distance between the chips by expanding the tape in the radial direction of the wafer. This expanding process is performed in the subsequent pick-up process in order to improve chip recognition by a CCD camera or the like and to prevent chip breakage caused by contact between adjacent chips when picking up a chip. The Thereafter, the chip is peeled off from the adhesive layer together with the adhesive layer in the pickup process and picked up, and directly attached to the lead frame, the package substrate, etc. in the mounting process. In this way, by using a semiconductor processing tape, it is possible to directly bond a chip with an adhesive layer to a lead frame, a package substrate, etc., so an adhesive coating process or separate die bonding to each chip The step of adhering the film can be omitted.

  However, in the dicing step, as described above, the wafer and the adhesive layer are diced together using the dicing blade, so that not only the wafer cutting waste but also the adhesive layer cutting waste is generated. Then, when the cutting waste of the adhesive layer is clogged in the dicing groove of the wafer, there is a problem that chips are stuck to each other to cause a pickup failure and the manufacturing yield of the semiconductor device is lowered.

  In order to solve such problems, a method has been proposed in which only the wafer is diced with a blade in the dicing process, and the semiconductor processing tape is expanded in the expanding process to divide the adhesive layer into individual chips. (For example, Patent Document 1). According to such a method for dividing the adhesive layer using the tension at the time of expansion, no cutting waste of the adhesive is generated, and there is no adverse effect in the pickup process.

  In recent years, a so-called stealth dicing method that can cut a wafer in a non-contact manner using a laser processing apparatus has been proposed as a wafer cutting method. For example, in Patent Document 2, as a stealth dicing method, an adhesive layer (die bond resin layer) is interposed, a focus light is adjusted inside a semiconductor substrate to which a sheet is attached, and laser light is irradiated. Forming a modified region by multiphoton absorption inside the semiconductor substrate, cutting the modified region into the planned cutting part, and expanding the sheet to cut the semiconductor substrate and the adhesive layer along the planned cutting part A method for cutting a semiconductor substrate comprising the steps of:

  Further, as another wafer cutting method using a laser processing apparatus, for example, Patent Document 3 discloses a process of attaching an adhesive layer (adhesive film) for die bonding to the back surface of a wafer, and the adhesive layer includes The process of pasting a stretchable protective adhesive tape on the adhesive layer side of the bonded wafer, and irradiating laser light along the street from the surface of the wafer to which the protective adhesive tape was bonded to each chip The process of dividing, the process of expanding the protective adhesive tape to give tensile force to the adhesive layer, breaking the adhesive layer for each chip, and protecting the chip to which the broken adhesive layer is bonded A wafer dividing method including a step of separating from a tape has been proposed.

  According to the wafer cutting methods described in Patent Document 2 and Patent Document 3, since the wafer is cut in a non-contact manner by laser light irradiation and tape expansion, the physical load on the wafer is small and the current mainstream. The wafer can be cut without generating wafer chipping (chipping) as in blade dicing. Further, since the adhesive layer is divided by the expansion, cutting waste of the adhesive layer is not generated. For this reason, it attracts attention as an excellent technique that can replace blade dicing.

  However, as described in Patent Documents 1 to 3, in the method of expanding by expanding and dividing the adhesive layer, when a conventional tape for semiconductor processing is used, the expanding ring increases as the expanding amount increases. There was a problem that the portion pushed up by the wire stretched and the portion loosened after the expansion was released, and the interval between chips (hereinafter referred to as “kerf width”) could not be maintained.

  Thus, a method has been proposed in which the adhesive layer is divided by an expand, the expand is unwound, and then a slack portion of the semiconductor processing tape is contracted by heating to maintain the kerf width (for example, Patent Document 4). , 5).

JP 2007-5530 A JP 2003-338467 A JP 2004-273895 A International Publication No. 2016/152957 Japanese Patent Laying-Open No. 2015-211081

  By the way, as a method of shrinking the slack of the semiconductor processing tape generated by the expansion by heating, generally, by rotating a pair of hot air nozzles around the annular portion pushed up by the expansion ring and causing the slack, A method is used in which hot air is applied to the part to heat and shrink.

  In the tape for semiconductor processing described in Patent Document 4, the thermal shrinkage rate in both the longitudinal direction and the width direction of the tape when heated at 100 ° C. for 10 seconds is 0% or more and 20% or less. However, when heated by circulating a hot air nozzle, the temperature near the surface of the semiconductor processing tape gradually increases, so it takes time to remove all the slack in the annular shape. was there. Further, the kerf width is not sufficiently retained, and adjacent chips come into contact with each other at the time of picking up, resulting in a problem that the yield of the semiconductor component manufacturing process deteriorates.

  In addition, the semiconductor processing tape described in Patent Document 5 has a shrinkage rate of 130% to 160 ° C. of 0.1% or more (see Claim 1 of Patent Document 5), and shrinkage. The temperature that produces is high. Therefore, when performing heat shrinkage with warm air, a high temperature and a long heating time are required, and the warm air may affect the adhesive layer near the outer periphery of the wafer, and the divided adhesive layer may melt and re-fuse. There is. Further, the kerf width is not sufficiently retained, and adjacent chips come into contact with each other at the time of picking up, resulting in a problem that the yield of the semiconductor component manufacturing process deteriorates.

Therefore, the present invention can sufficiently maintain the kerf width to such an extent that it can be sufficiently heated and shrunk in a short time, and adjacent chips can be brought into contact with each other at the time of pick-up and chipping can be suppressed. It aims at providing the tape for semiconductor processing which can do.

  In order to solve the above problems, a semiconductor processing tape according to the present invention includes a pressure-sensitive adhesive tape having a base film and a pressure-sensitive adhesive layer formed on at least one surface side of the base film, and the pressure-sensitive adhesive tape. Is measured at the time of temperature rise by an average value of the thermal deformation rate for every 1 ° C. between 40 ° C. and 80 ° C. measured at the time of temperature rise by the thermo-mechanical property tester in the MD direction and by the thermo-mechanical property tester in the TD direction. The sum with the average value of the thermal deformation rate for every 1 ° C. between 40 ° C. and 80 ° C. is a negative value.

  Moreover, it is preferable that the said adhesive tape and peeling film are laminated | stacked in this order on the said adhesive layer side.

  The semiconductor processing tape is preferably used for full cut and half cut blade dicing, full cut laser dicing, or laser stealth dicing.

  According to the semiconductor processing tape of the present invention, the kerf width can be reduced to such an extent that it can be sufficiently heated and shrunk in a short time and adjacent chips can be brought into contact with each other at the time of picking up and chipping can be prevented from occurring. It can be retained sufficiently.

It is sectional drawing which shows typically the structure of the tape for semiconductor processing which concerns on embodiment of this invention. It is sectional drawing which shows the state by which the surface protection tape was bonded by the wafer. It is sectional drawing for demonstrating the process of bonding a wafer and a ring frame to the tape for semiconductor processing which concerns on embodiment of this invention. It is sectional drawing explaining the process of peeling a surface protection tape from the surface of a wafer. It is sectional drawing which shows a mode that the modification | reformation area | region was formed in the wafer by laser processing. (A) It is sectional drawing which shows the state with which the tape for semiconductor processing which concerns on embodiment of this invention was mounted in the expand apparatus. (B) It is sectional drawing which shows the process in which a wafer is divided | segmented into a chip | tip by expansion of the tape for semiconductor processing. (C) It is sectional drawing which shows the tape for semiconductor processing after expansion, an adhesive bond layer, and a chip | tip. It is sectional drawing for demonstrating a heating shrinkage | contraction process. It is explanatory drawing which shows the measurement point of the kerf width in evaluation of an Example and a comparative example. It is an example of the measurement result of a thermal deformation rate.

  Hereinafter, embodiments of the present invention will be described in detail.

  FIG. 1 is a cross-sectional view showing a semiconductor processing tape 10 according to an embodiment of the present invention. In the semiconductor processing tape 10 of the present invention, the adhesive layer 13 is divided along the chip when the wafer is divided into chips by the expand. This semiconductor processing tape 10 has a pressure-sensitive adhesive tape 15 composed of a base film 11 and a pressure-sensitive adhesive layer 12 provided on the base film 11, and an adhesive layer 13 provided on the pressure-sensitive adhesive layer 12. Then, the back surface of the wafer is bonded onto the adhesive layer 13. Each layer may be cut (precut) into a predetermined shape in advance according to the use process and the apparatus. Further, the semiconductor processing tape 10 of the present invention may be in a form cut for each wafer, or a long sheet formed by cutting a plurality of wafers for each wafer, The form wound up in roll shape may be sufficient. Below, the structure of each layer is demonstrated.

<Base film>
The base film 11 is preferably uniform and isotropically expandable in that the wafer can be cut without deviation in all directions in the expanding process, and the material is not particularly limited. In general, the cross-linked resin has a greater restoring force against tension than the non-cross-linked resin, and has a large shrinkage stress when heat is applied to the stretched state after the expanding step. Therefore, it is excellent in that the slack generated in the tape after the expanding step is removed by heat shrinkage, and the tape is tensioned to stably maintain the interval (kerf width) between individual chips. Among the crosslinked resins, thermoplastic crosslinked resins are more preferably used. On the other hand, the non-crosslinked resin has less restoring force against tension compared to the crosslinked resin. Therefore, after the expansion process in a low temperature region such as −15 ° C. to 0 ° C., the tape is relaxed once and then returned to room temperature, and the tape is difficult to shrink when going to the pick-up process and the mounting process, so it adheres to the chip. It is excellent in that the adhesive layers can be prevented from contacting each other. Of the non-crosslinked resins, olefinic non-crosslinked resins are more preferably used.

  As such a thermoplastic crosslinked resin, for example, ethylene- (meth) acrylic acid binary copolymer or ethylene- (meth) acrylic acid- (meth) acrylic acid alkyl ester is used as the main polymer constituent 3 An ionomer resin obtained by crosslinking the original copolymer with a metal ion is exemplified. These are particularly suitable because they are suitable for the expanding process in terms of uniform expansibility and have a strong restoring force when heated by crosslinking. The metal ion contained in the ionomer resin is not particularly limited, and examples thereof include zinc and sodium. Zinc ions are preferable from the viewpoint of low elution and low contamination. In the (meth) acrylic acid alkyl ester of the terpolymer, the alkyl group having 1 to 4 carbon atoms preferably has a high elastic modulus and can transmit a strong force to the wafer. Examples of such (meth) acrylic acid alkyl esters include methyl methacrylate, ethyl methacrylate, propyl methacrylate, butyl methacrylate, methyl acrylate, ethyl acrylate, propyl acrylate, and butyl acrylate. Can be mentioned.

  In addition to the above ionomer resin, the above-mentioned thermoplastic crosslinked resin includes low density polyethylene having a specific gravity of 0.910 to less than 0.930, ultra-low density polyethylene having a specific gravity of less than 0.910, and ethylene-acetic acid. A resin selected from vinyl copolymers is also preferably crosslinked by irradiating an energy beam such as an electron beam. Such a thermoplastic cross-linked resin has a certain uniform expansibility since a cross-linked site and a non-cross-linked site coexist in the resin. In addition, since a strong restoring force works during heating, it is also suitable for removing tape slack generated in the expanding process, and since it contains almost no chlorine in the structure of the molecular chain, a tape that has become unnecessary after use can be removed. Even if it is incinerated, it does not generate chlorinated aromatic hydrocarbons such as dioxin and its analogs, so the environmental impact is small. By appropriately adjusting the amount of energy rays applied to the polyethylene or ethylene-vinyl acetate copolymer, a resin having sufficient uniform expandability can be obtained.

  Moreover, as non-crosslinked resin, the mixed resin composition of a polypropylene and a styrene-butadiene copolymer is illustrated, for example.

  As polypropylene, for example, a homopolymer of propylene or a block-type or random-type propylene-ethylene copolymer can be used. A random type propylene-ethylene copolymer is preferred because of its low rigidity. When the content of the ethylene structural unit in the propylene-ethylene copolymer is 0.1% by weight or more, it is excellent in that the rigidity of the tape and the compatibility between the resins in the mixed resin composition are high. When the rigidity of the tape is appropriate, the cutting property of the wafer is improved, and when the compatibility between the resins is high, the extrusion discharge amount is easily stabilized. More preferably, it is 1% by weight or more. Moreover, when the content rate of the ethylene structural unit in a propylene-ethylene copolymer is 7 weight% or less, it is excellent at the point which becomes easy to polymerize polypropylene stably. More preferably, it is 5% by weight or less.

  As the styrene-butadiene copolymer, a hydrogenated one may be used. When the styrene-butadiene copolymer is hydrogenated, it has good compatibility with propylene and can prevent embrittlement and discoloration due to oxidative degradation due to double bonds in butadiene. Moreover, it is preferable that the content rate of the styrene structural unit in the styrene-butadiene copolymer is 5% by weight or more in that the styrene-butadiene copolymer is stable and easily polymerized. Moreover, if it is 40 weight% or less, it is flexible and excellent in terms of expandability. More preferably, it is 25 weight% or less, More preferably, it is 15 weight% or less. As the styrene-butadiene copolymer, either a block-type copolymer or a random-type copolymer can be used. The random copolymer is preferable because the styrene phase is uniformly dispersed, the rigidity is prevented from being excessively increased, and the expandability is improved.

  It is excellent in the point which can suppress the thickness nonuniformity of a base film as the content rate of the polypropylene in a mixed resin composition is 30 weight% or more. If the thickness is uniform, the extensibility tends to be isotropic, the stress relaxation property of the base film becomes too large, the distance between the chips becomes smaller with time, and the adhesive layers come into contact with each other and remelt. Easy to prevent wearing. More preferably, it is 50 weight% or more. Moreover, it is easy to adjust the rigidity of a base film suitably as the content rate of a polypropylene is 90 weight% or less. If the rigidity of the base film becomes too large, the force required to expand the base film becomes large, which increases the load on the apparatus and makes it impossible to expand the wafer and the adhesive layer 13 enough to divide. Therefore, it is important to adjust appropriately. The lower limit of the content of the styrene-butadiene copolymer in the composite resin composition is preferably 10% by weight or more, and it is easy to adjust the rigidity of the base film suitable for the apparatus. An upper limit of 70% by weight or less is excellent in that thickness unevenness can be suppressed, and 50% by weight or less is more preferable.

  In the example shown in FIG. 1, the base film 11 is a single layer, but is not limited to this, and may have a multilayer structure in which two or more kinds of resins are laminated, or one kind of resin. Two or more layers may be laminated. Two or more kinds of resins are preferable from the viewpoint of expressing each characteristic more enhanced if the crosslinkability or noncrosslinkability is unified. It is preferable in that the drawback is compensated. The thickness of the base film 11 is not particularly defined, but it is sufficient that the base film 11 has sufficient strength to be easily stretched and not broken in the expanding process of the semiconductor processing tape 10. For example, about 50-300 micrometers is good and 70 micrometers-200 micrometers are more preferable.

  As a method for producing the multi-layer base film 11, a conventionally known extrusion method, laminating method, or the like can be used. When the laminating method is used, an adhesive may be interposed between the layers. A conventionally well-known adhesive agent can be used as an adhesive agent.

<Adhesive layer>
The pressure-sensitive adhesive layer 12 can be formed by applying a pressure-sensitive adhesive composition to the base film 11. The pressure-sensitive adhesive layer 12 constituting the semiconductor processing tape 10 of the present invention has a holding property that does not cause separation from the adhesive layer 13 at the time of dicing and does not cause defects such as chip jumping, and an adhesive at the time of pickup. Any material may be used as long as it can be easily separated from the layer 13.

  In the semiconductor processing tape 10 of the present invention, the structure of the pressure-sensitive adhesive composition constituting the pressure-sensitive adhesive layer 12 is not particularly limited, but in order to improve the pick-up property after dicing, an energy ray-curable material is preferable and cured. It is preferable that the material be easily peelable from the adhesive layer 13 later. As one embodiment, the pressure-sensitive adhesive composition contains 60 mol% or more of (meth) acrylate having an alkyl chain having 6 to 12 carbon atoms as the base resin, and has an iodine value of 5 to 30. What has a polymer (A) which has a carbon-carbon double bond is illustrated. Here, the energy ray means a light ray such as ultraviolet rays or ionizing radiation such as an electron beam.

  In such a polymer (A), when the introduction amount of the energy ray-curable carbon-carbon double bond is 5 or more in terms of iodine value, it is excellent in that the effect of reducing the adhesive strength after irradiation with energy rays is increased. More preferably, it is 10 or more. Moreover, when the iodine value is 30 or less, the holding power of the chip until it is picked up after irradiation with energy rays is high, and it is excellent in that it is easy to widen the chip gap at the time of expansion immediately before the picking process. It is preferable that the gap between the chips can be sufficiently widened before the pick-up process because image recognition of each chip at the time of pick-up is easy or pick-up becomes easy. Moreover, it is preferable that the introduction amount of the carbon-carbon double bond is 5 or more and 30 or less in terms of iodine value because the polymer (A) itself is stable and easy to produce.

  Furthermore, the polymer (A) is excellent in terms of heat resistance against heat accompanying energy beam irradiation when the glass transition temperature is −70 ° C. or higher, more preferably −66 ° C. or higher. Moreover, if it is 15 degrees C or less, it is excellent in the point of the scattering prevention effect of the chip | tip after dicing in a wafer with a rough surface state, More preferably, it is 0 degrees C or less, More preferably, it is -28 degrees C or less.

  The polymer (A) may be produced by any method, for example, a polymer obtained by mixing an acrylic copolymer and a compound having an energy ray-curable carbon-carbon double bond, An acrylic copolymer having a functional group or a methacrylic copolymer having a functional group (A1), a functional group capable of reacting with the functional group, and an energy ray-curable carbon-carbon double bond What is obtained by reacting with a compound (A2) having a hydrogen atom is used.

  Among these, as the methacrylic copolymer (A1) having the above functional group, a monomer (A1-1) having a carbon-carbon double bond such as alkyl acrylate or alkyl methacrylate, and carbon -What is obtained by copolymerizing the monomer (A1-2) which has a carbon double bond and has a functional group is illustrated. As the monomer (A1-1), hexyl acrylate, n-octyl acrylate, isooctyl acrylate, 2-ethylhexyl acrylate, dodecyl acrylate, decyl acrylate, lauryl acrylate or alkyl chain having an alkyl chain having 6 to 12 carbon atoms Examples thereof include pentyl acrylate, n-butyl acrylate, isobutyl acrylate, ethyl acrylate, methyl acrylate, and methacrylates similar to these, which are monomers having 5 or less carbon atoms.

  In addition, in the monomer (A1-1), the component having 6 or more carbon atoms in the alkyl chain is excellent in pick-up property because the peeling force between the pressure-sensitive adhesive layer and the adhesive layer can be reduced. In addition, a component of 12 or less has a low elastic modulus at room temperature and is excellent in terms of the adhesive force at the interface between the pressure-sensitive adhesive layer and the adhesive layer. When the adhesive force at the interface between the pressure-sensitive adhesive layer and the adhesive layer is high, when the wafer is cut by expanding the tape, the interface shift between the pressure-sensitive adhesive layer and the adhesive layer can be suppressed, and the cutting performance is improved. Therefore, it is preferable.

  Furthermore, as the monomer (A1-1), the more the monomer having a larger alkyl chain carbon number is used, the lower the glass transition temperature. By appropriately selecting the pressure-sensitive adhesive composition having the desired glass transition temperature. Product can be prepared. In addition to the glass transition temperature, a low molecular compound having a carbon-carbon double bond such as vinyl acetate, styrene or acrylonitrile may be blended for the purpose of improving various properties such as compatibility. In that case, these low molecular compounds shall mix | blend within the range of 5 mass% or less of the total mass of a monomer (A1-1).

  On the other hand, examples of the functional group of the monomer (A1-2) include a carboxyl group, a hydroxyl group, an amino group, a cyclic acid anhydride group, an epoxy group, and an isocyanate group. The monomer (A1-2) Specific examples of acrylic acid, methacrylic acid, cinnamic acid, itaconic acid, fumaric acid, phthalic acid, 2-hydroxyalkyl acrylates, 2-hydroxyalkyl methacrylates, glycol monoacrylates, glycol monomethacrylates, N -Methylolacrylamide, N-methylolmethacrylamide, allyl alcohol, N-alkylaminoethyl acrylates, N-alkylaminoethyl methacrylates, acrylamides, methacrylamides, maleic anhydride, itaconic anhydride, fumaric anhydride, phthalic anhydride Acid, glycidyl acrylate Rate, glycidyl methacrylate, it is possible to enumerate and allyl glycidyl ether.

  Furthermore, in the compound (A2), examples of the functional group used include a hydroxyl group, an epoxy group, and an isocyanate group when the functional group of the compound (A1) is a carboxyl group or a cyclic acid anhydride group. In the case of a hydroxyl group, a cyclic acid anhydride group, an isocyanate group, and the like can be exemplified. In the case of an amino group, an epoxy group, an isocyanate group, and the like can be exemplified. , A carboxyl group, a cyclic acid anhydride group, an amino group, and the like, and specific examples thereof include those similar to those listed in the specific examples of the monomer (A1-2). Moreover, what urethanated a part of isocyanate group of the polyisocyanate compound with the monomer which has a hydroxyl group or a carboxyl group, and an energy-beam curable carbon-carbon double bond as a compound (A2) can also be used.

  In the reaction of the compound (A1) and the compound (A2), by leaving an unreacted functional group, a desired product with respect to characteristics such as acid value or hydroxyl value can be produced. If the OH group is left so that the hydroxyl value of the polymer (A) is 5 to 100, the risk of pick-up mistakes can be further reduced by reducing the adhesive strength after energy beam irradiation. Further, if the COOH group is left so that the acid value of the polymer (A) is 0.5 to 30, an improvement effect after restoration of the pressure-sensitive adhesive layer after expanding the semiconductor processing tape of the present invention is obtained. And preferred. When the hydroxyl value of the polymer (A) is 5 or more, it is excellent in terms of the effect of reducing the adhesive strength after irradiation with energy rays, and when it is 100 or less, it is excellent in terms of fluidity of the adhesive after irradiation with energy rays. . Moreover, when the acid value is 0.5 or more, it is excellent in terms of tape recoverability, and when it is 30 or less, it is excellent in terms of fluidity of the pressure-sensitive adhesive.

  In the synthesis of the above polymer (A), as the organic solvent when the reaction is carried out by solution polymerization, ketone-based, ester-based, alcohol-based and aromatic-based solvents can be used, among which toluene, acetic acid A good solvent for acrylic polymers such as ethyl, isopropyl alcohol, benzene methyl cellosolve, ethyl cellosolve, acetone, methyl ethyl ketone, and the like, and preferably a solvent having a boiling point of 60 to 120 ° C. The polymerization initiator is α, α′-azobis. A radical generator such as an azobis type such as isobutyl nitrile or an organic peroxide type such as benzoyl peroxide is usually used. At this time, if necessary, a catalyst and a polymerization inhibitor can be used in combination, and the polymer (A) having a desired molecular weight can be obtained by adjusting the polymerization temperature and the polymerization time. In terms of adjusting the molecular weight, it is preferable to use a mercaptan or carbon tetrachloride solvent. This reaction is not limited to solution polymerization, and may be another method such as bulk polymerization or suspension polymerization.

  As described above, the polymer (A) can be obtained, but in the present invention, when the molecular weight of the polymer (A) is 300,000 or more, it is excellent in that the cohesive force can be increased. When the cohesive force is high, there is an effect of suppressing displacement at the interface with the adhesive layer at the time of expanding, and since the tensile force is easily transmitted to the adhesive layer, the splitting property of the adhesive layer is improved. Is preferable. When the molecular weight of the polymer (A) is 2 million or less, it is excellent in terms of suppressing gelation at the time of synthesis and coating. In addition, the molecular weight in this invention is a mass mean molecular weight of polystyrene conversion.

  Moreover, in the semiconductor processing tape 10 of the present invention, the resin composition constituting the pressure-sensitive adhesive layer 12 may further contain a compound (B) that acts as a crosslinking agent in addition to the polymer (A). Good. Examples thereof include polyisocyanates, melamine / formaldehyde resins, and epoxy resins, and these can be used alone or in combination of two or more. This compound (B) reacts with the polymer (A) or the base film, and as a result, a pressure-sensitive adhesive mainly composed of the polymers (A) and (B) after coating the pressure-sensitive adhesive composition due to the resulting crosslinked structure. The cohesive strength of can be improved.

  The polyisocyanates are not particularly limited, and examples thereof include 4,4'-diphenylmethane diisocyanate, tolylene diisocyanate, xylylene diisocyanate, 4,4'-diphenyl ether diisocyanate, 4,4 '-[2,2-bis (4 -Phenoxyphenyl) propane] aromatic isocyanate such as diisocyanate, hexamethylene diisocyanate, 2,2,4-trimethyl-hexamethylene diisocyanate, isophorone diisocyanate, 4,4'-dicyclohexylmethane diisocyanate, 2,4'-dicyclohexylmethane diisocyanate , Lysine diisocyanate, lysine triisocyanate, and the like. Specifically, Coronate L (trade name, manufactured by Nippon Polyurethane Co., Ltd.) can be used. Kill. Specific examples of the melamine / formaldehyde resin include Nicalac MX-45 (trade name, manufactured by Sanwa Chemical Co., Ltd.), Melan (trade name, manufactured by Hitachi Chemical Co., Ltd.), and the like. As the epoxy resin, TETRAD-X (trade name, manufactured by Mitsubishi Chemical Corporation) or the like can be used. In the present invention, it is particularly preferable to use polyisocyanates.

  The pressure-sensitive adhesive layer in which the amount of the compound (B) added is 0.1 parts by mass or more with respect to 100 parts by mass of the polymer (A) is excellent in terms of cohesive force. More preferably, it is 0.5 mass part or more. In addition, the pressure-sensitive adhesive layer of 10 parts by mass or less is excellent in terms of rapid gelation suppression at the time of coating, and the workability such as the formulation and application of the pressure-sensitive adhesive is good. More preferably, it is 5 parts by mass or less.

  In the present invention, the pressure-sensitive adhesive layer 12 may contain a photopolymerization initiator (C). There is no restriction | limiting in particular in the photoinitiator (C) contained in the adhesive layer 12, A conventionally well-known thing can be used. For example, benzophenones such as benzophenone, 4,4′-dimethylaminobenzophenone, 4,4′-diethylaminobenzophenone and 4,4′-dichlorobenzophenone, acetophenones such as acetophenone and diethoxyacetophenone, 2-ethylanthraquinone, t- Examples include anthraquinones such as butylanthraquinone, 2-chlorothioxanthone, benzoin ethyl ether, benzoin isopropyl ether, benzyl, 2,4,5-triarylimidazole dimer (lophine dimer), acridine compounds, and the like. These can be used alone or in combination of two or more. As addition amount of a photoinitiator (C), it is preferable to mix | blend 0.1 mass part or more with respect to 100 mass parts of polymers (A), and 0.5 mass part or more is more preferable. Moreover, the upper limit is preferably 10 parts by mass or less, and more preferably 5 parts by mass or less.

  Further, the energy ray-curable pressure-sensitive adhesive used in the present invention can be blended with a tackifier, a pressure-sensitive adhesive preparation agent, a surfactant, or other modifiers, if necessary. Moreover, you may add an inorganic compound filler suitably.

  The pressure-sensitive adhesive layer 12 can be formed using a conventional method for forming a pressure-sensitive adhesive layer. For example, a method of forming the pressure-sensitive adhesive composition on a predetermined surface of the base film 11 and a method of forming the pressure-sensitive adhesive composition into a separator (for example, a plastic film or sheet coated with a release agent) The adhesive layer 12 can be formed on the base film 11 by a method of transferring the adhesive layer 12 to a predetermined surface of the base material after coating on the base film 11. The pressure-sensitive adhesive layer 12 may have a single layer form or a laminated form.

  Although there is no restriction | limiting in particular as thickness of the adhesive layer 12, If it is 2 micrometers or more in thickness, it is excellent at the point of tack force and 5 micrometers or more are more preferable. When it is 15 μm or less, the pickup property is excellent, and 10 μm or less is more preferable.

  The adhesive tape 15 has an average value of a thermal deformation rate for each 1 ° C. between 40 ° C. and 80 ° C. measured at a temperature rise by a thermomechanical property tester in the MD (Machine Direction) direction, and in a TD (Transverse Direction) direction. The sum of the average value of the thermal deformation rate for each 1 ° C. between 40 ° C. and 80 ° C. measured at the time of temperature rise by the thermomechanical property tester is a negative value, that is, less than 0. The MD direction is a flow direction during film formation, and the TD direction is a direction perpendicular to the MD direction.

  The average value of the thermal deformation rate for each 1 ° C. between 40 ° C. and 80 ° C. measured at the time of temperature rise by the thermomechanical property tester in the MD direction of the adhesive tape 15 and at the time of temperature rise by the thermomechanical property tester in the TD direction By making the sum of the measured average value of the thermal deformation rate for each 1 ° C. between 40 ° C. and 80 ° C. a negative value, the semiconductor processing tape 10 can be shrunk by heating at a low temperature for a short time. Therefore, even when using a method in which a pair of hot air nozzles circulate around the slack portion of the semiconductor processing tape 10 and heat shrink, it is possible to reduce the amount of expansion without causing heat shrinkage many times. The slack caused by the expansion can be removed in a short time, and an appropriate kerf width can be maintained.

The thermal deformation rate can be calculated from the following formula (1) by measuring the deformation amount due to temperature in accordance with JIS K7197: 2012.
Thermal deformation ratio TMA (%) = (Deformation amount of sample length / Sample length before measurement) × 100 (1)
The amount of deformation is shown with the sample expansion direction as positive and the contraction direction as negative.

The thermal deformation rate between 40 ° C. and 80 ° C. is like the curve in the MD direction or the curve in the TD direction in FIG. 9, and the sum of the average value in the MD direction and the average value in the TD direction is a negative value. This means that the adhesive tape generally exhibits a shrinkage behavior between 40 ° C. and 80 ° C.
In order to make the sum of the average value of the thermal deformation rate in the MD direction and the average value of the thermal deformation rate in the TD direction a negative value, a step of stretching the resin film after film formation is added, and the adhesive tape 15 is configured. Depending on the type of resin, the thickness of the adhesive tape 15 and the amount of stretching in the MD direction or TD direction may be adjusted. Examples of the method for stretching the adhesive tape in the TD direction include a method using a tenter, a method using blow molding (inflation), a method using an expanding roll, and the like. Examples thereof include a method and a method of pulling in a transport roll. Any method may be used as a method of obtaining the adhesive tape 15 of the present invention.

<Adhesive layer>
In the semiconductor processing tape 10 of the present invention, the adhesive layer 13 is peeled off from the adhesive layer 12 and attached to the chip when the chip is picked up after the wafer is bonded and diced. And it is used as an adhesive agent when fixing a chip | tip to a board | substrate or a lead frame.

  The adhesive layer 13 is not particularly limited, but may be any film adhesive generally used for wafers, and examples thereof include those containing a thermoplastic resin and a thermopolymerizable component. . The thermoplastic resin used for the adhesive layer 13 of the present invention is preferably a resin having thermoplasticity or a resin that has thermoplasticity in an uncured state and forms a crosslinked structure after heating, and is not particularly limited. One embodiment includes a thermoplastic resin having a weight average molecular weight of 5000 to 200,000 and a glass transition temperature of 0 to 150 ° C. Another embodiment includes a thermoplastic resin having a weight average molecular weight of 100,000 to 1,000,000 and a glass transition temperature of −50 to 20 ° C.

  As the former thermoplastic resin, for example, polyimide resin, polyamide resin, polyetherimide resin, polyamideimide resin, polyester resin, polyesterimide resin, phenoxy resin, polysulfone resin, polyethersulfone resin, polyphenylene sulfide resin, polyether ketone Among them, it is preferable to use a polyimide resin or a phenoxy resin, and it is preferable to use a polymer containing a functional group as the latter thermoplastic resin.

  The polyimide resin can be obtained by subjecting tetracarboxylic dianhydride and diamine to a condensation reaction by a known method. That is, in an organic solvent, tetracarboxylic dianhydride and diamine are used in an equimolar or nearly equimolar amount (the order of addition of each component is arbitrary), and the addition reaction is carried out at a reaction temperature of 80 ° C. or lower, preferably 0 to 60 ° C. As the reaction proceeds, the viscosity of the reaction solution gradually increases, and polyamic acid, which is a polyimide precursor, is generated. The molecular weight of the polyamic acid can be adjusted by heating and depolymerization at a temperature of 50 to 80 ° C. The polyimide resin can be obtained by dehydrating and ring-closing the reaction product (polyamic acid). The dehydration ring closure can be performed by a thermal ring closure method in which heat treatment is performed and a chemical ring closure method using a dehydrating agent.

  There is no restriction | limiting in particular as tetracarboxylic dianhydride used as a raw material of a polyimide resin, For example, 1, 2- (ethylene) bis (trimellitic anhydride), 1, 3- (trimethylene) bis (trimellitate anhydride), 1,4- (tetramethylene) bis (trimellitic anhydride), 1,5- (pentamethylene) bis (trimellitic anhydride), 1,6- (hexamethylene) bis (trimellitic anhydride), 1,7- ( Heptamethylene) bis (trimellitic anhydride), 1,8- (octamethylene) bis (trimellitic anhydride), 1,9- (nonamethylene) bis (trimellitic anhydride), 1,10- (decamethylene) bis (trimellitic anhydride) Product), 1,12- (dodecamethylene) bis (trimellitate anhydride), 1,16- (hexadeca) Tylene) bis (trimellitic anhydride), 1,18- (octadecamethylene) bis (trimellitate anhydride), pyromellitic dianhydride, 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride, 2,2 ′, 3,3′-biphenyltetracarboxylic dianhydride, 2,2-bis (3,4-dicarboxyphenyl) propane dianhydride, 2,2-bis (2,3-dicarboxyphenyl) Propane dianhydride, 1,1-bis (2,3-dicarboxyphenyl) ethane anhydride, 1,1-bis (3,4-dicarboxyphenyl) ethane anhydride, bis (2,3-dicarboxyphenyl) Methane dianhydride, bis (3,4-dicarboxyphenyl) methane dianhydride, bis (3,4-dicarboxyphenyl) sulfone dianhydride, 3,4,9,10-perylene Tracarboxylic dianhydride, bis (3,4-dicarboxyphenyl) ether dianhydride, benzene-1,2,3,4-tetracarboxylic dianhydride, 3,4,3 ′, 4′-benzophenone Tetracarboxylic dianhydride, 2,3,2 ′, 3′-benzophenonetetracarboxylic dianhydride, 3,3,3 ′, 4′-benzophenonetetracarboxylic dianhydride, 1,2,5,6 -Naphthalene tetracarboxylic dianhydride, 1,4,5,8-naphthalene tetracarboxylic dianhydride, 2,3,6,7-naphthalene tetracarboxylic dianhydride, 1,2,4,5-naphthalene Tetracarboxylic dianhydride, 2,6-dichloronaphthalene-1,4,5,8-tetracarboxylic dianhydride, 2,7-dichloronaphthalene-1,4,5,8-tetracarboxylic dianhydride , 2, 3, 6,7-tetrachloronaphthalene-1,4,5,8-tetracarboxylic dianhydride, phenanthrene-1,8,9,10-tetracarboxylic dianhydride, pyrazine-2,3,5,6- Tetracarboxylic dianhydride, thiophene-2,3,5,6-tetracarboxylic dianhydride, 2,3,3 ′, 4′-biphenyltetracarboxylic dianhydride, 3,4,3 ′, 4 '-Biphenyltetracarboxylic dianhydride, 2,3,2', 3'-biphenyltetracarboxylic dianhydride, bis (3,4-dicarboxyphenyl) dimethylsilane dianhydride, bis (3,4- Dicarboxyphenyl) methylphenylsilane dianhydride, bis (3,4-dicarboxyphenyl) diphenylsilane dianhydride, 1,4-bis (3,4-dicarboxyphenyldimethylsilyl) benzene Product, 1,3-bis (3,4-dicarboxyphenyl) -1,1,3,3-tetramethyldicyclohexane dianhydride, p-phenylenebis (trimellitic anhydride), ethylenetetracarboxylic dianhydride 1,2,3,4-butanetetracarboxylic dianhydride, decahydronaphthalene-1,4,5,8-tetracarboxylic dianhydride, 4,8-dimethyl-1,2,3,5 6,7-hexahydronaphthalene-1,2,5,6-tetracarboxylic dianhydride, cyclopentane-1,2,3,4-tetracarboxylic dianhydride, pyrrolidine-2,3,4,5 -Tetracarboxylic dianhydride, 1,2,3,4-cyclobutanetetracarboxylic dianhydride, bis (exo-bicyclo [2,2,1] heptane-2,3-dicarboxylic dianhydride, bicyclo- [2, 2, ] -Oct-7-ene-2,3,5,6-tetracarboxylic dianhydride, 2,2-bis (3,4-dicarboxyphenyl) hexafluoropropane dianhydride, 2,2-bis [ 4- (3,4-dicarboxyphenyl) phenyl] hexafluoropropane dianhydride, 4,4′-bis (3,4-dicarboxyphenoxy) diphenyl sulfide dianhydride, 1,4-bis (2-hydroxy) Hexafluoroisopropyl) benzenebis (trimellitic anhydride), 1,3-bis (2-hydroxyhexafluoroisopropyl) benzenebis (trimellitic anhydride), 5- (2,5-dioxotetrahydrofuryl)- 3-methyl-3-cyclohexene-1,2-dicarboxylic dianhydride, tetrahydrofuran-2,3,4,5-tetracarboxylic dianhydride, etc. These can be used, and one or more of these can be used in combination.

Moreover, there is no restriction | limiting in particular as diamine used as a raw material of a polyimide, For example, o-phenylenediamine, m-phenylenediamine, p-phenylenediamine, 3,3'-diaminodiphenyl ether, 3,4'-diaminodiphenyl ether, 4 , 4′-diaminodiphenyl ether, 3,3′-diaminodiphenylmethane, 3,4′-diaminodiphenylmethane, 4,4′-diaminodiphenylethermethane, bis (4-amino-3,5-dimethylphenyl) methane, bis (4 -Amino-3,5-diisopropylphenyl) methane, 3,3'-diaminodiphenyldifluoromethane, 3,4'-diaminodiphenyldifluoromethane, 4,4'-diaminodiphenyldifluoromethane, 3,3'-diaminodiphenylsulfone 3,4'-dia Nodiphenyl sulfone, 4,4'-diaminodiphenyl sulfone, 3,3'-diaminodiphenyl sulfide, 3,4'-diaminodiphenyl sulfide, 4,4'-diaminodiphenyl sulfide, 3,3'-diaminodiphenyl ketone, 3 , 4′-diaminodiphenyl ketone, 4,4′-diaminodiphenyl ketone, 2,2-bis (3-aminophenyl) propane, 2,2 ′-(3,4′-diaminodiphenyl) propane, 2,2- Bis (4-aminophenyl) propane, 2,2-bis (3-aminophenyl) hexafluoropropane, 2,2- (3,4'-diaminodiphenyl) hexafluoropropane, 2,2-bis (4-amino) Phenyl) hexafluoropropane, 1,3-bis (3-aminophenoxy) benzene, 1,4-bis (3-a Nophenoxy) benzene, 1,4-bis (4-aminophenoxy) benzene, 3,3 ′-(1,4-phenylenebis (1-methylethylidene)) bisaniline, 3,4 ′-(1,4-phenylene) Bis (1-methylethylidene)) bisaniline, 4,4 ′-(1,4-phenylenebis (1-methylethylidene)) bisaniline, 2,2-bis (4- (3-aminophenoxy) phenyl) propane, 2 , 2-bis (4- (4-aminophenoxy) phenyl) propane, 2,2-bis (4- (3-aminophenoxy) phenyl) hexafluoropropane, 2,2-bis (4- (4-aminophenoxy) ) Phenyl) hexafluoropropane, bis (4- (3-aminophenoxy) phenyl) sulfide, bis (4- (4-aminophenoxy) phenyl) Rufido, bis (4- (3-aminophenoxy) phenyl) sulfone, bis (4- (4-aminophenoxy) phenyl) sulfone, aromatic diamines such as 3,5-diaminobenzoic acid, 1,2-diaminoethane, 1,3-diaminopropane, 1,4-diaminobutane, 1,5-diaminopentane, 1,6-diaminohexane, 1,7-diaminoheptane, 1,8-diaminooctane, 1,9-diaminononane, 1, 10-diaminodecane, 1,11-diaminoundecane, 1,12-diaminododecane, 1,2-diaminocyclohexane, diaminopolysiloxane represented by the following general formula (1), 1,3-bis (aminomethyl) cyclohexane , Jeffermin D-230, D-400, D-2000, D-40 manufactured by Sun Techno Chemical Co., Ltd. Aliphatic diamines such as polyoxyalkylene diamines such as 0, ED-600, ED-900, ED-2001, and EDR-148 can be used, and one or more of these can also be used in combination. . The glass transition temperature of the polyimide resin is preferably 0 to 200 ° C., and the weight average molecular weight is preferably 10,000 to 200,000.
(In the formula, R1 and R2 each represent a divalent hydrocarbon group having 1 to 30 carbon atoms, and may be the same or different, and R3 and R4 each represent a monovalent hydrocarbon group. They may be the same or different, and m is an integer of 1 or more)

  In addition to the above, the phenoxy resin, which is one of the preferred thermoplastic resins, is preferably a resin obtained by a method of reacting various bisphenols with epichlorohydrin or a method of reacting a liquid epoxy resin with bisphenol. Bisphenol A, bisphenol bisphenol AF, bisphenol AD, bisphenol F, and bisphenol S. Since the phenoxy resin has a similar structure to the epoxy resin, the phenoxy resin has good compatibility with the epoxy resin and is suitable for imparting good adhesiveness to the adhesive film.

Examples of the phenoxy resin used in the present invention include a resin having a repeating unit represented by the following general formula (2).

In the general formula (2), X represents a single bond or a divalent linking group. Examples of the divalent linking group include an alkylene group, a phenylene group, —O—, —S—, —SO—, and —SO ₂ —. Here, the alkylene group is preferably an alkylene group having 1 to 10 carbon atoms, and more preferably -C (R1) (R2)-. R1 and R2 represent a hydrogen atom or an alkyl group, and the alkyl group is preferably a linear or branched alkyl group having 1 to 8 carbon atoms, such as methyl, ethyl, n-propyl, isopropyl, isooctyl, 2-ethylhexyl. 1,3,3-trimethylbutyl and the like. The alkyl group may be substituted with a halogen atom, and examples thereof include a trifluoromethyl group. X represents an alkylene group, -O -, - S-, fluorene group or -SO ₂ - is preferably an alkylene group, -SO ₂ - is more preferred. Of _{these, -C (CH 3) 2 -} , - CH (CH 3) -, - CH 2 -, - SO 2 - are _{preferred, -C (CH 3) 2 -} , - CH (CH 3) -, - CH ₂ — is more preferable, and —C (CH ₃ ) ₂ — is particularly preferable.

  If the phenoxy resin represented by the general formula (2) has a repeating unit, even if it is a resin having a plurality of repeating units in which X in the general formula (2) is different, X is the same repeating unit. It may consist only of. In the present invention, a resin in which X is composed of only the same repeating unit is preferable.

  When the phenoxy resin represented by the general formula (2) contains a polar substituent such as a hydroxyl group or a carboxyl group, the compatibility with the thermopolymerizable component is improved and a uniform appearance and characteristics are imparted. be able to.

  When the weight average molecular weight of the phenoxy resin is 5000 or more, the film forming property is excellent. More preferably, it is 10,000 or more, More preferably, it is 30,000 or more. Moreover, it is preferable that the mass average molecular weight is 150,000 or less in terms of fluidity at the time of thermocompression bonding and compatibility with other resins. More preferably, it is 100,000 or less. Moreover, when the glass transition temperature is −50 ° C. or higher, it is excellent in terms of film formability, more preferably 0 ° C. or higher, and further preferably 50 ° C. or higher. When the glass transition temperature is 150 ° C., the adhesive strength of the adhesive layer 13 at the time of die bonding is excellent, more preferably 120 ° C. or less, and further preferably 110 ° C. or less.

  On the other hand, examples of the functional group in the polymer containing the functional group include a glycidyl group, an acryloyl group, a methacryloyl group, a hydroxyl group, a carboxyl group, an isocyanurate group, an amino group, and an amide group. Among them, a glycidyl group is preferable. .

  Examples of the high molecular weight component containing the functional group include a (meth) acrylic copolymer containing a functional group such as a glycidyl group, a hydroxyl group, or a carboxyl group.

  As said (meth) acrylic copolymer, a (meth) acrylic ester copolymer, an acrylic rubber, etc. can be used, for example, and an acrylic rubber is preferable. The acrylic rubber is a rubber mainly composed of an acrylate ester and mainly composed of a copolymer such as butyl acrylate and acrylonitrile, a copolymer such as ethyl acrylate and acrylonitrile, or the like.

  When the functional group contains a glycidyl group, the amount of the glycidyl group-containing repeating unit is preferably 0.5 to 6.0% by weight, more preferably 0.5 to 5.0% by weight, and 0.8 to 5%. 0.0% by weight is particularly preferred. The glycidyl group-containing repeating unit is a constituent monomer of a (meth) acrylic copolymer containing a glycidyl group, and specifically, glycidyl acrylate or glycidyl methacrylate. When the amount of the glycidyl group-containing repeating unit is within this range, the adhesive force can be secured and gelation can be prevented.

  Examples of the constituent monomer of the above (meth) acrylic copolymer other than glycidyl acrylate and glycidyl methacrylate include ethyl (meth) acrylate and butyl (meth) acrylate. These may be used alone or in combination of two or more. Can also be used. In the present invention, ethyl (meth) acrylate refers to ethyl acrylate and / or ethyl methacrylate. The mixing ratio in the case of using a combination of functional monomers may be determined in consideration of the glass transition temperature of the (meth) acrylic copolymer. A glass transition temperature of −50 ° C. or higher is preferable in that it is excellent in film formability and can suppress excessive tack at room temperature. If the tack force at room temperature is excessive, handling of the adhesive layer becomes difficult. More preferably, it is -20 degreeC or more, More preferably, it is 0 degreeC or more. Moreover, when the glass transition temperature is set to 30 ° C. or lower, the adhesive strength of the adhesive layer at the time of die bonding is excellent, and more preferably 20 ° C. or lower.

  When a high molecular weight component containing a functional monomer is produced by polymerizing the above monomer, the polymerization method is not particularly limited, and for example, methods such as pearl polymerization and solution polymerization can be used. Is preferred.

In the present invention, when the weight average molecular weight of the high molecular weight component containing a functional monomer is 100,000 or more, it is excellent in terms of film formability, more preferably 200,000 or more, and further preferably 500,000 or more. . Moreover, when the weight average molecular weight is adjusted to 2,000,000 or less, it is excellent in that the heat fluidity of the adhesive layer at the time of die bonding is improved. Improving the heat fluidity of the adhesive layer during die bonding improves the adhesion between the adhesive layer and the adherend and improves the adhesion force. It also helps to suppress voids by filling the unevenness of the adherend. Become. More preferably, it is 1,000,000 or less, more preferably 800,000 or less, and if it is 500,000 or less, a still greater effect can be obtained.

  The thermopolymerizable component is not particularly limited as long as it is polymerized by heat. For example, functional groups such as glycidyl group, acryloyl group, methacryloyl group, hydroxyl group, carboxyl group, isocyanurate group, amino group, amide group, etc. A compound having a group and a trigger material can be used, and these can be used alone or in combination of two or more. However, in consideration of heat resistance as an adhesive layer, it is cured by heat and has an adhesive action. It is preferable to contain the thermosetting resin which acts together with a curing agent and an accelerator. Examples of the thermosetting resin include an epoxy resin, an acrylic resin, a silicone resin, a phenol resin, a thermosetting polyimide resin, a polyurethane resin, a melamine resin, and a urea resin, and in particular, heat resistance, workability, and reliability. It is most preferable to use an epoxy resin in terms of obtaining an adhesive layer having excellent resistance.

  The epoxy resin is not particularly limited as long as it is cured and has an adhesive action, and is a bifunctional epoxy resin such as bisphenol A type epoxy, or a novolac type epoxy resin such as a phenol novolac type epoxy resin or a cresol novolac type epoxy resin. Etc. can be used. Moreover, what is generally known, such as a polyfunctional epoxy resin, a glycidyl amine type epoxy resin, a heterocyclic ring-containing epoxy resin, or an alicyclic epoxy resin, can be applied.

  Examples of the bisphenol A type epoxy resin include Epicoat series (Epicoat 807, Epicoat 815, Epicoat 825, Epicoat 827, Epicoat 828, Epicoat 834, Epicoat 1001, Epicoat 1004, Epicoat 1007, Epicoat 1009) manufactured by Mitsubishi Chemical Corporation, Dow The chemical company make, DER-330, DER-301, DER-361, Nippon Steel & Sumikin Chemical Co., Ltd. make, YD8125, YDF8170 etc. are mentioned. Examples of the phenol novolac type epoxy resin include Epicoat 152 and Epicoat 154 manufactured by Mitsubishi Chemical Corporation, EPPN-201 manufactured by Nippon Kayaku Co., Ltd., DEN-438 manufactured by Dow Chemical Co., Ltd., and the above o-cresol. As the novolak type epoxy resin, Nippon Kayaku Co., Ltd. EOCN-102S, EOCN-103S, EOCN-104S, EOCN-1012, EOCN-1025, EOCN-1027, Nippon Steel & Sumikin Chemical Co., Ltd., YDCN701, YDCN702, YDCN703, YDCN704, etc. are mentioned. Examples of the polyfunctional epoxy resin include Epon1031S manufactured by Mitsubishi Chemical Corporation, Araldite 0163 manufactured by Ciba Specialty Chemicals, Denacol EX-611, EX-614, EX-614B, and EX-622 manufactured by Nagase ChemteX Corporation. , EX-512, EX-521, EX-421, EX-411, EX-321, and the like. As said amine type epoxy resin, Mitsubishi Chemical Corporation Epicoat 604, Tohto Kasei Co., Ltd. YH-434, Mitsubishi Gas Chemical Co., Ltd. TETRAD-X and TETRAD-C, Sumitomo Chemical Co., Ltd. ELM-120 etc. are mentioned. Examples of the heterocyclic ring-containing epoxy resin include Araldite PT810 manufactured by Ciba Specialty Chemicals, ERL4234, ERL4299, ERL4221, and ERL4206 manufactured by UCC. These epoxy resins can be used alone or in combination of two or more.

  In order to cure the thermosetting resin, additives can be appropriately added. Examples of such additives include a curing agent, a curing accelerator, a catalyst, and the like. When a catalyst is added, a promoter can be used as necessary.

When using an epoxy resin for the thermosetting resin, it is preferable to use an epoxy resin curing agent or a curing accelerator, and it is more preferable to use these in combination. Examples of the curing agent include phenol resin, dicyandiamide, boron trifluoride complex compound, organic hydrazide compound, amines, polyamide resin, imidazole compound, urea or thiourea compound, polymercaptan compound, and polysulfide resin having a mercapto group at the terminal. , Acid anhydrides, and light / ultraviolet curing agents. These can be used alone or in combination of two or more.
Among these, boron trifluoride complex compounds include boron trifluoride-amine complexes with various amine compounds (preferably primary amine compounds), and organic hydrazide compounds include isophthalic acid dihydrazide.

  Examples of the phenol resin include phenol novolac resins, phenol aralkyl resins, cresol novolac resins, tert-butylphenol novolac resins, nonyl phenol novolac resins and other novolac type phenol resins, resol type phenol resins, polyoxystyrene such as polyparaoxystyrene, and the like. Can be mentioned. Of these, phenol compounds having at least two phenolic hydroxyl groups in the molecule are preferred.

  Examples of the phenolic compound having at least two phenolic hydroxyl groups in the molecule include phenol novolak resin, cresol novolak resin, t-butylphenol novolak resin, dicyclopentagencresol novolak resin, dicyclopentadiene phenol novolak resin, Examples include xylylene-modified phenol novolak resin, naphthol novolak resin, trisphenol novolak resin, tetrakisphenol novolak resin, bisphenol A novolak resin, poly-p-vinylphenol resin, and phenol aralkyl resin. Further, among these phenol resins, a phenol novolac resin and a phenol aralkyl resin are particularly preferable, and connection reliability can be improved.

  Examples of amines include chain aliphatic amines (diethylenetriamine, triethylenetetramine, hexamethylenediamine, N, N-dimethylpropylamine, benzyldimethylamine, 2- (dimethylamino) phenol, 2,4,6-tris (dimethyl). Aminomethyl) phenol, m-xylenediamine, etc.), cyclic aliphatic amines (N-aminoethylpiperazine, bis (3-methyl-4-aminocyclohexyl) methane, bis (4-aminocyclohexyl) methane, mensendiamine, Foronediamine, 1,3-bis (aminomethyl) cyclohexane, etc.), heterocyclic amines (piperazine, N, N-dimethylpiperazine, triethylenediamine, melamine, guanamine, etc.), aromatic amines (metaphenylenediamine, 4,4 ′) -Diaminodiph Nilmethane, diamino, 4,4′-diaminodiphenylsulfone, etc.), polyamide resin (polyamideamine is preferred, a condensation product of dimer acid and polyamine), imidazole compound (2-phenyl-4,5-dihydroxymethylimidazole, 2-methyl) Imidazole, 2,4-dimethylimidazole, 2-n-heptadecylimidazole, 1-cyanoethyl-2-undecylimidazolium trimellitate, epoxy-imidazole adduct, etc., urea or thiourea compound (N, N-dialkylurea) Compounds, N, N-dialkylthiourea compounds, etc.), polymercaptan compounds, polysulfide resins with terminal mercapto groups, acid anhydrides (tetrahydrophthalic anhydride, etc.), light / ultraviolet curing agents (diphenyliodine and um hexafluorophosphate) Feto, triphenylsulfonium hexafluorophosphate and the like) are exemplified.

The curing accelerator is not particularly limited as long as it cures a thermosetting resin. For example, imidazoles, dicyandiamide derivatives, dicarboxylic acid dihydrazide, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-ethyl- Examples include 4-methylimidazole-tetraphenylborate and 1,8-diazabicyclo [5.4.0] undecene-7-tetraphenylborate.
Examples of imidazoles include imidazole, 2-methylimidazole, 2-ethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1 -Benzyl-2-ethylimidazole, 1-benzyl-2-ethyl-5-methylimidazole, 2-phenyl-4-methyl-5-hydroxydimethylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, etc. .

  The content of the epoxy resin curing agent or curing accelerator in the adhesive layer is not particularly limited, and the optimum content varies depending on the type of the curing agent or curing accelerator.

  The blending ratio of the epoxy resin and the phenol resin is preferably blended so that, for example, the hydroxyl group in the phenol resin is 0.5 to 2.0 equivalents per equivalent of the epoxy group in the epoxy resin component. More preferably, it is 0.8-1.2 equivalent. That is, if the blending ratio of both is out of the above range, sufficient curing reaction does not proceed and the characteristics of the adhesive layer are likely to deteriorate. In one embodiment, the other thermosetting resin and the curing agent are 0.5 to 20 parts by mass of the curing agent with respect to 100 parts by mass of the thermosetting resin. 1 to 10 parts by mass. The content of the curing accelerator is preferably smaller than the content of the curing agent, and is preferably 0.001 to 1.5 parts by mass with respect to 100 parts by mass of the thermosetting resin. More preferred is 95 parts by mass. By adjusting within the said range, progress of sufficient hardening reaction can be assisted. 0.001-1.5 mass parts is preferable with respect to 100 mass parts of thermosetting resins, and, as for content of a catalyst, 0.01-1.0 mass part is further more preferable.

Moreover, the adhesive bond layer 13 of this invention can mix | blend a filler suitably according to the use. This improves the dicing property of the adhesive layer in an uncured state, improves handling, adjusts the melt viscosity, imparts thixotropic properties, further imparts thermal conductivity and adhesive strength in the cured adhesive layer It is possible to improve.
The filler used in the present invention is preferably an inorganic filler. The inorganic filler is not particularly limited, and examples thereof include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, alumina, aluminum nitride, aluminum borate whisker, and boron nitride. Crystalline silica, amorphous silica, antimony oxide, and the like can be used. These can be used alone or in combination of two or more.

  Of the above inorganic fillers, alumina, aluminum nitride, boron nitride, crystalline silica, amorphous silica and the like are preferably used from the viewpoint of improving thermal conductivity. In terms of adjusting melt viscosity and imparting thixotropic properties, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, alumina, crystalline silica It is preferable to use amorphous silica or the like. From the viewpoint of improving dicing properties, it is preferable to use alumina or silica.

  When the filler content is 30% by mass or more, the wire bonding property is excellent. At the time of wire bonding, it is preferable that the storage elastic modulus after curing of the adhesive layer bonding the chip for hitting the wire is adjusted to a range of 20 to 1000 MPa at 170 ° C., and the filler content is 30% by mass or more. When it is, it is easy to adjust the storage elastic modulus after hardening of an adhesive bond layer in this range. Further, when the filler content is 75% by mass or less, the film formability and the heat fluidity of the adhesive layer during die bonding are excellent. Improving the heat fluidity of the adhesive layer during die bonding improves the adhesion between the adhesive layer and the adherend and improves the adhesion force. It also helps to suppress voids by filling the unevenness of the adherend. Become. More preferably, it is 70 mass% or less, More preferably, it is 60 mass% or less.

  The adhesive layer of this invention can contain 2 or more types of fillers from which an average particle diameter differs as said filler. In this case, compared to the case of using a single filler, in the raw material mixture before film formation, it becomes easy to prevent a viscosity increase when the filler content ratio is high or a viscosity decrease when the filler content ratio is low, Good film formability is easily obtained, the fluidity of the uncured adhesive layer can be optimally controlled, and excellent adhesive strength can be easily obtained after the adhesive layer is cured.

In the adhesive layer of the present invention, the average particle size of the filler is preferably 2.0 μm or less, and more preferably 1.0 μm or less. When the average particle size of the filler is 2.0 μm or less, the film can be easily thinned. Here, a thin film implies a thickness of 20 μm or less. Moreover, dispersibility is favorable in it being 0.01 micrometer or more.
Furthermore, from the viewpoint of improving the adhesive force after curing of the adhesive layer, optimally controlling the fluidity of the uncured adhesive layer, preventing the viscosity increase or decrease of the raw material mixture before film formation, the average particle size It is preferable to contain the 1st filler which exists in the range of 0.1-1.0 micrometer, and the 2nd filler whose average particle diameter of a primary particle size exists in the range of 0.005-0.03 micrometer. The first filler in which the average particle diameter is in the range of 0.1 to 1.0 μm and 99% or more of the particles are distributed in the range of the particle diameter of 0.1 to 1.0 μm, and the average of the primary particle diameter It is preferable to include a second filler having a particle size in the range of 0.005 to 0.03 μm and 99% or more of the particles being distributed in the range of 0.005 to 0.1 μm.
The average particle size in the present invention means the D50 value of the cumulative volume distribution curve in which 50% by volume of the particles have a smaller diameter than this value. In the present invention, the average particle diameter or D50 value is measured by a laser diffraction method, for example, using a Malvern Mastersizer 2000 manufactured by Malvern Instruments. In this technique, the size of the particles in the dispersion is measured using laser beam diffraction based on either Fraunhofer or Mie theory applications. In the present invention, Mie theory or modified Mie theory for non-spherical particles is used, and the average particle diameter or D50 value relates to scattering measurement at 0.02 to 135 ° with respect to the incident laser beam.

In the present invention, in one embodiment, a thermoplastic resin having a weight average molecular weight of 5,000 to 200,000 of 10 to 40% by mass and 10 to 40% by mass with respect to the entire pressure-sensitive adhesive composition constituting the adhesive layer 13. The heat-polymerizable component and 30 to 75% by mass of filler may be included. In this embodiment, the content of the filler may be 30 to 60% by mass or 40 to 60% by mass. Further, the mass average molecular weight of the thermoplastic resin may be 5,000 to 150,000, or 10,000 to 100,000.
In another aspect, a thermoplastic resin having a weight average molecular weight of 200,000 to 2,000,000 with respect to the entire pressure-sensitive adhesive composition constituting the adhesive layer 13, and 20 to 50% by weight. The heat-polymerizable component and 30 to 75% by mass of filler may be included. In this embodiment, the content of the filler may be 30 to 60% by mass or 30 to 50% by mass. The mass average molecular weight of the thermoplastic resin may be 200,000 to 1,000,000, or 200,000 to 800,000.
By adjusting the blending ratio, the storage elastic modulus and fluidity after curing of the adhesive layer 13 can be optimized, and heat resistance at high temperatures tends to be sufficiently obtained.

  In the semiconductor processing tape 10 of the present invention, the adhesive layer 13 may be formed by laminating a film (hereinafter referred to as an adhesive film) directly or indirectly on the base film 11. . The laminating temperature is preferably in the range of 10 to 100 ° C., and a linear pressure of 0.01 to 10 N / m is preferably applied. Such an adhesive film may be one in which an adhesive layer 13 is formed on a release film. In this case, the release film may be released after lamination, or the semiconductor processing tape 10 may be used as it is. It may be used as a cover film and peeled when a wafer is bonded.

  Although the said adhesive film may be laminated | stacked on the whole surface of the adhesive layer 12, even if it laminate | stacks the adhesive film cut | disconnected in the shape according to the wafer previously bonded (pre-cut) on the adhesive layer 12 Good. Thus, when the adhesive film according to a wafer is laminated | stacked, as shown in FIG. 3, there exists the adhesive bond layer 13 in the part to which the wafer W is bonded, and in the part to which the ring frame 20 is bonded. Only the pressure-sensitive adhesive layer 12 is present without the adhesive layer 13. In general, since the adhesive layer 13 is difficult to peel off from the adherend, the ring frame 20 can be bonded to the pressure-sensitive adhesive layer 12 by using a pre-cut adhesive film, and the ring is peeled off when the tape is peeled off after use. The effect that the adhesive residue to the frame 20 hardly occurs is obtained.

<Application>
The semiconductor processing tape 10 of the present invention is used in a method for manufacturing a semiconductor device including an expanding process for dividing the adhesive layer 13 by at least expansion. Therefore, other processes and the order of processes are not particularly limited. For example, it can be suitably used in the following semiconductor device manufacturing methods (A) to (E).

Manufacturing method of semiconductor device (A)
(A) a step of bonding a surface protection tape to the wafer surface on which a circuit pattern is formed;
(B) a back grinding process for grinding the back surface of the wafer;
(C) In the state which heated the wafer at 70-80 degreeC, the process of bonding the adhesive film bonded by the said adhesive layer of the said tape for semiconductor processing on the back surface of the said wafer,
(D) peeling the surface protection tape from the wafer surface;
(E) irradiating a portion of the wafer to be divided with laser light to form a modified region by multiphoton absorption inside the wafer;
(F) expanding the semiconductor processing tape to divide the wafer and the adhesive film along a dividing line to obtain a plurality of chips with adhesive films;
(G) removing the slack generated in the expanding step by heating and shrinking a portion that does not overlap the chip of the semiconductor processing tape, and maintaining the interval between the chips;
(H) picking up the chip with the adhesive layer from the adhesive layer of the semiconductor processing tape;
A method of manufacturing a semiconductor device including:
The manufacturing method of this semiconductor device is a method using stealth dicing.

Manufacturing method of semiconductor device (B)
(A) a step of bonding a surface protection tape to the wafer surface on which a circuit pattern is formed;
(B) a back grinding process for grinding the back surface of the wafer;
(C) In the state which heated the wafer at 70-80 degreeC, the process of bonding the adhesive film bonded by the said adhesive layer of the said tape for semiconductor processing on the back surface of a wafer,
(D) peeling the surface protection tape from the wafer surface;
(E) irradiating a laser beam along a cutting line from the surface of the wafer and cutting into individual chips;
(F) dividing the adhesive film in correspondence with the chip by expanding the semiconductor processing tape to obtain a plurality of chips with adhesive films;
(G) removing the slack generated in the expanding step by heating and shrinking a portion that does not overlap the chip of the semiconductor processing tape, and maintaining the interval between the chips;
(H) picking up the chip with the adhesive layer from the adhesive layer of the semiconductor processing tape;
A method of manufacturing a semiconductor device including:
The manufacturing method of this semiconductor device is a method using full-cut laser dicing.

Manufacturing method of semiconductor device (C)
(A) a step of bonding a surface protection tape to the wafer surface on which a circuit pattern is formed;
(B) a back grinding process for grinding the back surface of the wafer;
(C) In the state which heated the wafer at 70-80 degreeC, the process of bonding the adhesive film bonded by the said adhesive layer of the said tape for semiconductor processing on the back surface of a wafer,
(D) peeling the surface protection tape from the wafer surface;
(E) cutting the wafer along a cutting line using a dicing blade, and cutting the wafer into individual chips;
(F) dividing the adhesive film in correspondence with the chip by expanding the semiconductor processing tape to obtain a plurality of chips with adhesive films;
(G) removing the slack generated in the expanding step by heating and shrinking a portion that does not overlap the chip of the semiconductor processing tape, and maintaining the interval between the chips;
(H) picking up the chip with the adhesive layer from the adhesive layer of the semiconductor processing tape;
A method of manufacturing a semiconductor device including:
The manufacturing method of the semiconductor device is a method using full-cut blade dicing.

Manufacturing method of semiconductor device (D)
(A) cutting the wafer on which the circuit pattern is formed using a dicing blade to a depth less than the thickness of the wafer along a predetermined cutting line;
(B) bonding a surface protective tape to the wafer surface;
(C) a back grinding process for grinding the back surface of the wafer;
(D) A step of bonding an adhesive film bonded to the pressure-sensitive adhesive layer of the semiconductor processing tape on the back surface of the chip in a state where the wafer is heated at 70 to 80 ° C .;
(E) peeling the surface protection tape from the wafer surface;
(F) dividing the adhesive film in correspondence with the chip by expanding the semiconductor processing tape to obtain a plurality of chips with adhesive films;
(G) removing the slack generated in the expanding step by heating and shrinking a portion that does not overlap the chip of the semiconductor processing tape, and maintaining the interval between the chips;
(H) picking up the chip with the adhesive layer from the adhesive layer of the semiconductor processing tape;
A method of manufacturing a semiconductor device including:
The manufacturing method of this semiconductor device is a method using half-cut blade dicing.

Manufacturing method of semiconductor device (E)
(A) a step of bonding a surface protection tape to the wafer surface on which a circuit pattern is formed;
(B) irradiating a laser beam to a portion to be divided of the wafer to form a modified region by multiphoton absorption inside the wafer;
(C) a back grinding process for grinding the back surface of the wafer;
(D) A step of bonding an adhesive layer of the semiconductor processing tape to the back surface of the wafer while the wafer is heated to 70 to 80 ° C .;
(E) peeling the surface protection tape from the wafer surface;
(F) dividing the wafer and the adhesive layer along a dividing line by expanding the semiconductor processing tape, and obtaining a plurality of chips with adhesive films;
(G) a step of heating and shrinking a portion of the semiconductor processing tape that does not overlap the chip, thereby removing slack generated in the expanding step and maintaining a distance between the chips;
(H) picking up the chip with the adhesive layer from the adhesive layer of the semiconductor processing tape;
A method of manufacturing a semiconductor device including:
The manufacturing method of this semiconductor device is a method using stealth dicing.

<How to use>
A method of using the tape when the semiconductor processing tape 10 of the present invention is applied to the above-described semiconductor device manufacturing method (A) will be described with reference to FIGS. First, as shown in FIG. 2, a surface protection tape 14 for protecting a circuit pattern containing an ultraviolet curable component in an adhesive is bonded to the surface of a wafer W on which a circuit pattern is formed. Perform back grinding process to grind.

  After the back grinding process, as shown in FIG. 3, the wafer W is placed on the heater table 25 of the wafer mounter with the front side facing down, and then the semiconductor processing tape 10 is bonded to the back side of the wafer W. To do. The semiconductor processing tape 10 used here is obtained by laminating an adhesive film that has been cut (precut) in advance in a shape corresponding to the wafer W to be bonded, and an adhesive layer on the surface to be bonded to the wafer W. The adhesive layer 12 is exposed around the area where 13 is exposed. The portion of the semiconductor processing tape 10 where the adhesive layer 13 is exposed and the back surface of the wafer W are bonded together, and the portion where the adhesive layer 12 around the adhesive layer 13 is exposed and the ring frame 20 are bonded together. At this time, the heater table 25 is set to 70 to 80 ° C., and thus heat bonding is performed. In the present embodiment, the adhesive tape 15 composed of the base film 11 and the adhesive layer 12 provided on the base film 11 and the adhesive layer 13 provided on the adhesive layer 12 are provided. Although the semiconductor processing tape 10 is used, an adhesive tape and a film adhesive may be used. In this case, first, a film-like adhesive is bonded to the back surface of the wafer to form an adhesive layer, and an adhesive layer of an adhesive tape is bonded to the adhesive layer. At this time, the adhesive tape 15 according to the present invention is used as the adhesive tape.

Next, the wafer W bonded with the semiconductor processing tape 10 is unloaded from the heater table 25 and placed on the suction table 26 with the semiconductor processing tape 10 side down as shown in FIG. Then, from the upper side of the wafer W sucked and fixed to the suction table 26, for example, the substrate surface side of the surface protective tape 14 is irradiated with ultraviolet rays of 1000 mJ / cm ² using the energy ray light source 27, and the surface protective tape 14 The adhesive strength to the wafer W is reduced, and the surface protection tape 14 is peeled off from the surface of the wafer W.

  Next, as shown in FIG. 5, a laser beam is irradiated to a portion to be divided of the wafer W to form 32 modified regions by multiphoton absorption inside the wafer W.

  Next, as shown in FIG. 6A, the semiconductor processing tape 10 to which the wafer W and the ring frame 20 are bonded is placed on the stage 21 of the expanding apparatus with the base film 11 side facing down. .

  Next, as shown in FIG. 6B, with the ring frame 20 fixed, the hollow cylindrical push-up member 22 of the expanding device is lifted to expand (expand) the semiconductor processing tape 10. As expansion conditions, the expanding speed is, for example, 5 to 500 mm / sec, and the expanding amount (push-up amount) is, for example, 5 to 25 mm. Thus, the semiconductor processing tape 10 is stretched in the radial direction of the wafer W, whereby the wafer W is divided into chips 34 starting from the modified region 32. At this time, in the adhesive layer 13, elongation (deformation) due to expansion is suppressed at the portion bonded to the back surface of the wafer W, and no breakage occurs. However, tension due to expansion of the tape is concentrated between the chips 34. And break. Therefore, as shown in FIG. 6C, the adhesive layer 13 is also cut off together with the wafer W. Thereby, the some chip | tip 34 with the adhesive bond layer 13 can be obtained.

  Next, as shown in FIG. 7, the push-up member 22 is returned to the original position, the slack of the semiconductor processing tape 10 generated in the previous expanding process is removed, and the distance between the chips 34 is stably maintained. Perform the process. In this step, for example, hot air of 40 to 120 ° C. is used by using the hot air nozzle 29 in the annular heat shrinkage region 28 between the region where the chip 34 exists in the semiconductor processing tape 10 and the ring frame 20. To heat and shrink the base film 11 so that the semiconductor processing tape 10 is stretched. Thereafter, the adhesive layer 12 is subjected to an energy ray curing process or a thermosetting process to weaken the adhesive force of the adhesive layer 12 to the adhesive layer 13, and then the chip 34 is picked up.

In addition, although the semiconductor processing tape 10 according to the present embodiment has a configuration in which the adhesive layer 13 is provided on the pressure-sensitive adhesive layer 12, it may be configured without providing the adhesive layer 13. In this case, the wafer may be bonded onto the pressure-sensitive adhesive layer 12 and used to sever only the wafer, or the adhesive produced in the same manner as the adhesive layer 13 when the semiconductor processing tape is used. A film may be bonded onto the adhesive layer 12 together with the wafer to divide the wafer and the adhesive film.
<Example>
Next, in order to further clarify the effects of the present invention, examples and comparative examples will be described in detail, but the present invention is not limited to these examples.

[Production of semiconductor processing tape]
(1) Production of base film <Base film A>
Zinc ionomer of ethylene-methacrylic acid-ethyl methacrylate copolymer synthesized by radical polymerization (methacrylic acid content 15%, ethyl methacrylate content 5%, softening point 72 ° C., melting point 90 ° C., density Resin beads having 0.96 g / cm ³ and a zinc ion content of 5% by mass were melted at 230 ° C. and formed into a long film having a thickness of 150 μm using an extruder. Thereafter, the base film A was produced by stretching the long film in the TD direction so as to have a thickness of 90 μm.

<Base film B>
A base film B was prepared in the same manner as the base film A except that the length of the long film was 180 μm and the long film was stretched in the TD direction so as to have a thickness of 90 μm.

<Base film C>
A base film C was produced in the same manner as the base film A except that the length of the long film was 215 μm and the long film was stretched in the TD direction so as to have a thickness of 90 μm.

<Base film D>
Zinc ionomer of ethylene-methacrylic acid-isobutyl methacrylate copolymer synthesized by radical polymerization method (methacrylic acid content 11%, isobutyl methacrylate content 9%, softening point 64 ° C., melting point 83 ° C., density Resin beads having 0.95 g / cm ³ and a zinc ion content of 4% by mass were melted at 230 ° C. and formed into a long film having a thickness of 1 · BR> T 0 μm using an extruder. Thereafter, the long film was stretched in the TD direction so as to have a thickness of 90 μM, thereby producing a base film D.

<Base film E>
Resin beads in which hydrogenated styrene thermoplastic elastomer and homopropylene (PP) were mixed at a blending ratio of 52:48 were melted at 200 ° C., and a long film having a thickness of 150 μm was formed using an extruder. Thereafter, the base film E was produced by stretching the long film in the TD direction so as to have a thickness of 90 μm.

<Base film F>
Resin beads in which hydrogenated styrene thermoplastic elastomer and homopropylene (PP) were mixed at a blending ratio of 64:36 were melted at 200 ° C., and formed into a long film having a thickness of 150 μm using an extruder. Thereafter, the base film F was produced by stretching the long film in the TD direction so as to have a thickness of 90 μm.

<Base film G>
A base film G was produced in the same manner as the base film A except that the length of the long film was 150 μm and the long film was stretched in the MD direction so as to have a thickness of 90 μm.

<Base film H>
A base film H was prepared in the same manner as the base film D except that the length of the long film was 150 μm and the long film was stretched in the MD direction so as to have a thickness of 90 μm.

<Base film I>
A base film I was prepared in the same manner as the base film A, except that the length of the long film was 90 μm and the long film was not stretched.

<Base film J>
A base film J was prepared in the same manner as the base film D, except that the length of the long film was 90 μm and the long film was not stretched.

<Base film K>
A base film K was produced in the same manner as the base film E, except that the length of the long film was 90 μm and the long film was not stretched.

<Base film L> A base film K was prepared in the same manner as the base film F except that the length of the long film was 90 μm and the long film was not stretched.

<Base film M>
A base film M was produced in the same manner as the base film A except that the length of the long film was 110 μm and the long film was stretched in the TD direction so as to have a thickness of 90 μm.

<Base film N>
A base film N was produced in the same manner as the base film A except that the length of the long film was 120 μm and the long film was stretched in the TD direction so as to have a thickness of 90 μm.

(2) Preparation of acrylic copolymer As the acrylic copolymer (A1) having a functional group, it is composed of 2-ethylhexyl acrylate, 2-hydroxyethyl acrylate and methacrylic acid, and the ratio of 2-ethylhexyl acrylate is 60 mol%. A copolymer having a mass average molecular weight of 700,000 was prepared. Next, 2-isocyanatoethyl methacrylate was added so that the iodine value was 25 to prepare an acrylic copolymer having a glass transition temperature of −50 ° C., a hydroxyl value of 10 mgKOH / g, and an acid value of 5 mgKOH / g. .

(3) Preparation of adhesive composition 40 parts by mass of epoxy resin “1002” (Mitsubishi Chemical Corporation, solid bisphenol A type epoxy resin, epoxy equivalent 600), epoxy resin “806” (trade name, manufactured by Mitsubishi Chemical Corporation) Bisphenol F type epoxy resin, epoxy equivalent 160, specific gravity 1.20) 100 parts by mass, curing agent “Dyhard100SF” (Degussa product name, dicyandiamide) 5 parts by mass, silica filler “SO-C2” (product of Admafine Co., Ltd.) Name, average particle size 0.5 μm) 200 parts by mass, and “Aerosil R972” which is a silica filler (trade name manufactured by Nippon Aerosil Co., Ltd., average particle size 0.016 μm of primary particle size) 3 parts by mass MEK was added to and stirred and mixed to obtain a uniform composition.
To this, 100 parts by mass of a phenoxy resin “PKHH” (trade name, INCHEM, mass average molecular weight 52,000, glass transition temperature 92 ° C.) and “KBM-802” (trade name, Mercapto, manufactured by Shin-Etsu Silicone Co., Ltd.) as a coupling agent 0.6 parts by mass of propyltrimethoxysilane) and “Cureazole 2PHZ-PW” (trade name, 2-phenyl-4,5-dihydroxymethylimidazole manufactured by Shikoku Kasei Co., Ltd., decomposition temperature 230 ° C.) as a curing accelerator 0.5 parts by mass was added and stirred and mixed until uniform. Furthermore, this was filtered with a 100-mesh filter and vacuum degassed to obtain an adhesive composition varnish.

<Example 1>
5 parts by mass of Coronate L (manufactured by Nippon Polyurethane) as a polyisocyanate and 3 parts by mass of Esacure KIP 150 (manufactured by Lamberti) as a photopolymerization initiator are added to 100 parts by mass of the above acrylic copolymer. Was dissolved in ethyl acetate and stirred to prepare an adhesive composition.
Next, this pressure-sensitive adhesive composition was applied to a release liner comprising a release-treated polyethylene-terephthalate film so that the thickness after drying was 10 μm, and dried at 110 ° C. for 3 minutes. A pressure-sensitive adhesive sheet in which a pressure-sensitive adhesive layer was formed on a base film was prepared by bonding to a film.

  Next, the above-mentioned adhesive composition was applied to a release liner comprising a release-treated polyethylene-terephthalate film so that the thickness after drying was 20 μm, and dried at 110 ° C. for 5 minutes to release. An adhesive film having an adhesive layer formed on a liner was produced.

  The pressure-sensitive adhesive sheet was cut into a shape shown in FIG. 3 or the like that can be attached to the ring frame so as to cover the opening. Moreover, the adhesive film was cut into the shape shown in FIG. Then, the adhesive layer side of the adhesive sheet and the adhesive layer side of the adhesive film are pasted so that a portion where the adhesive layer 12 is exposed is formed around the adhesive film as shown in FIG. In addition, a semiconductor processing tape was produced.

<Examples 2 to 8 and Comparative Examples 1 to 6> The semiconductors according to Examples 2 to 8 and Comparative Examples 1 to 6 were prepared in the same manner as in Example 1 except that the base film described in Table 1 was used. A processing tape was prepared.

About the adhesive tape of the tape for semiconductor processing which concerns on an Example and a comparative example, it cut | disconnects so that it may become length 24mm (direction which measures deformation amount) and width 5mm (direction orthogonal to the direction which measures deformation amount), and a sample A piece.
About the obtained sample piece, the deformation | transformation by the temperature in two directions of MD and TD was measured on the following measurement conditions with the tensile load method using the thermomechanical property tester (Rigaku Corporation make, brand name: TMA8310). did.
(Measurement condition)
Measurement temperature: -60 to 100 ° C
Temperature increase rate: 5 ° C / min
Measurement load: 19.6mN
Atmosphere gas: Nitrogen atmosphere (100ml / min)
Sampling: 0.5s
Distance between chucks: 20mm

And the thermal deformation rate was computed by following formula (1), the average value of the thermal deformation rate for every 1 degreeC between 40 to 80 degreeC of each of MD direction and TD direction was calculated | required, and the sum was computed. The results are shown in Tables 1 and 2.
Thermal deformation ratio TMA (%) = (displacement of sample length / sample length before measurement) × 100 (1)

[Evaluation of chip chipping]
The wafers were divided into chips for the semiconductor processing tapes of the examples and comparative examples by the method described below, and chip chipping was evaluated.

(A) a step of bonding a surface protection tape to the wafer surface on which a circuit pattern is formed;
(B) irradiating a laser beam to a portion to be divided of the wafer to form a modified region by multiphoton absorption inside the wafer;
(C) a back grinding process for grinding the back surface of the wafer;
(D) A step of bonding an adhesive layer of the semiconductor processing tape to the back surface of the wafer while the wafer is heated to 70 to 80 ° C .;
(E) peeling the surface protection tape from the wafer surface;
(F) expanding the semiconductor processing tape to divide the wafer and the adhesive layer along a cutting line to obtain a plurality of chips with an adhesive film; and (g) the semiconductor processing tape. The portion that does not overlap with the tip (the annular region between the tip and the ring frame) is heated and shrunk to remove the slack generated in the expanding step of (f), and the spacing between the tips. Holding the
(H) The chip with the adhesive layer was picked up from the adhesive layer of the semiconductor processing tape.

  In the step (d), the wafer was bonded to the semiconductor processing tape so that the dividing line of the wafer was aligned with the MD direction and the TD direction of the base film.

  In the step (f), the dicing ring frame bonded to the semiconductor processing tape with DDS2300 manufactured by DISCO Corporation is pushed down by the expanding ring of DDS2300 manufactured by DISCO Corporation, and the wafer bonding site of the semiconductor processing tape Expanding was performed by pressing a portion of the outer periphery that does not overlap the wafer against a circular push-up member. (F) As the process conditions, the amount of expansion was adjusted so that the expanding speed was 300 mm / sec and the expanded height was 10 mm. Here, the amount of expansion refers to the amount of change in the relative position between the ring frame and the push-up member before and after pressing. The chip size was 1 × 1 mm square.

In the step (g), expansion was performed again at room temperature under the conditions of an expansion speed of 1 mm / sec and an expansion height of 10 mm, and then heat shrink treatment was performed under the following conditions.
[Condition 1]
Heater set temperature: 220 ° C
Hot air volume: 40L / min
Spacing between heater and semiconductor processing tape: 20mm
Heater rotation speed: 7 ° / sec
[Condition 2]
Heater set temperature: 220 ° C
Hot air volume: 40L / min
Spacing between heater and semiconductor processing tape: 20mm
Heater rotation speed: 5 ° / sec

About the semiconductor processing tape of Examples 1-8 and Comparative Examples 1-6, after the said (g) process, it picked up and evaluated the presence or absence of a chip | tip chip. When the pickup target chip is lifted in both conditions 1 and 2 of the above-mentioned step (g), the chip that does not cause chipping due to interference with the adjacent chip is defined as “Excellent” and adjacent in condition 1 Chip breakage due to interference with the chip does not occur, but in condition 2, chip breakage occurs and the occurrence rate is less than 1% as “good”, and in condition 2, chip due to interference with the adjacent chip A chip with chipping of 1% or more and less than 3% is regarded as an acceptable product, and a chip chipping of 3% or more due to interference with an adjacent chip under both conditions 1 and 2 It evaluated by "x" as a defective article. The results are shown in Tables 1 and 2.
In the evaluation, as shown in FIG. 8, there is no chip in the MD direction of the adhesive tape in the vicinity of the rightmost tip 50a, and similarly, the leftmost in FIG. 8 without the chip in the MD direction of the adhesive tape. 100 chips each were picked up and evaluated for the periphery of the end chip 50b, the periphery of the end chip 51 having no chip in the TD direction of the adhesive tape, and the periphery of the chip 52 located in the center.

  As shown in Table 1, the tapes for semiconductor processing according to Examples 1 to 8 are heat every 1 ° C. between 40 ° C. and 80 ° C. measured at the time of temperature rise by a thermomechanical property tester in the MD direction of the adhesive tape. Since the sum of the average value of the deformation rate and the average value of the thermal deformation rate every 1 ° C. between 40 ° C. and 80 ° C. measured at the time of temperature rise by the thermomechanical property tester in the TD direction is a negative value, Chip chipping during pick-up caused by contact with the chip was successfully suppressed.

  On the other hand, as shown in Table 2, the semiconductor processing tapes according to Comparative Examples 1 to 6 are each 1 ° C. between 40 ° C. and 80 ° C. measured at the time of temperature rise by a thermomechanical property tester in the MD direction of the adhesive tape. Since the sum of the average value of the thermal deformation rate and the average value of the thermal deformation rate every 1 ° C. between 40 ° C. and 80 ° C. measured at the time of temperature rise by the thermomechanical property tester in the TD direction is not a negative value, The result was inferior in suppression of chip chipping at the time of pick-up accompanying contact with an adjacent chip.

10: Semiconductor processing tape 11: Base film 12: Adhesive layer 13: Adhesive layer 22: Push-up member 28: Heat shrinkage region 29: Hot air nozzle

Claims (3)

A pressure-sensitive adhesive tape having a base film and an adhesive layer formed on at least one side of the base film;
The pressure-sensitive adhesive tape has an average value of a thermal deformation rate every 1 ° C. between 40 ° C. and 80 ° C. measured at the time of temperature rise by a thermo-mechanical property tester in the MD direction, and a temperature rise by a thermo-mechanical property tester in the TD direction. A tape for semiconductor processing, characterized in that the sum of the average value of the thermal deformation rate for each 1 ° C between 40 ° C and 80 ° C measured at times is a negative value.   The semiconductor processing tape according to claim 1, wherein an adhesive layer is laminated on the pressure-sensitive adhesive layer side. 3. The semiconductor processing tape according to claim 1, wherein the tape is used for full-cut and half-cut blade dicing, laser dicing, or stealth dicing by a laser.