JP2024000458A - Dicing tape, semiconductor chip using dicing tape and manufacturing method of semiconductor device - Google Patents

Abstract

To provide a dicing tape which suppresses reduction of a kerf width just after a normal temperature expansion, can be heated and shrunk efficiently and uniformly in a shorter time than the prior arts in a heat shrink step after the normal temperature expansion and is capable of sufficiently keeping the kerf width to such an extent that contact and re-adhesion of adjacent die bond films (adhesive layers) with each other or damage of an edge of a semiconductor chip can be suppressed, the semiconductor chip using the dicing tape and a manufacturing method of a semiconductor device.SOLUTION: The present invention relates to a dicing tape comprising a substrate film and an adhesive layer containing an active energy beam curable adhesive composition on the substrate film. The substrate film has a tensile strength in 100% extension at 23°C under 9 MPa or more and 18 MPa or less in an MD direction, a stress relaxation rate after 100% extension and holding for 100 seconds at 23°C in 50% or more and thermal shrinkage after 100% extension and holding for 100 seconds at 80°C in 20% or more. The adhesive layer has thermal resistance of 0.45 K cm2/W or less.SELECTED DRAWING: Figure 2

Description

The present invention relates to a dicing tape and a dicing die bond film that can be used in the manufacturing process of semiconductor devices.

In the manufacture of semiconductor devices, a dicing tape or a dicing die bond film in which the dicing tape and a die bond film are integrated is used.

A dicing tape has a structure in which an adhesive layer is provided on a base film, and is used to fix and hold semiconductor chips cut into individual pieces by dicing during dicing of a semiconductor wafer so that they do not scatter. The individualized semiconductor chips are then peeled off from the adhesive layer of the dicing tape and fixed to an adherend such as a lead frame, wiring board, or another semiconductor chip via a separately prepared adhesive or adhesive film. be done.

A dicing die bond film is a film in which a die bond film (hereinafter sometimes referred to as an "adhesive layer") is removably provided on an adhesive layer of a dicing tape. In manufacturing semiconductor devices, a semiconductor wafer is bonded onto a die bond film of a dicing die bond film. The semiconductor wafer and die bond film are then divided, peeled off (picked up) from the adhesive layer of the dicing tape, and fixed to an adherend such as a lead frame, wiring board, or another semiconductor chip via the die bond film. .

Conventionally, a full-cut cutting method using a dicing blade rotating at high speed has been used as a method for dividing semiconductor wafers. However, in recent years, as semiconductor wafers have become thinner, a method called SDBG (Stealth Dicing Before Griding) has been used to prevent chipping during cutting.

In this method, for example, first, a laser beam is irradiated onto the planned dicing line of a semiconductor wafer to form a modified region at a predetermined depth from the surface of the semiconductor wafer without completely cutting the semiconductor wafer, and then , by performing backside grinding while adjusting the amount of grinding appropriately, the semiconductor chips are separated into a plurality of semiconductor chips. Thereafter, the diced semiconductor chips are attached to a dicing die bond film, and the dicing tape is expanded at a low temperature (for example, -30°C to 0°C) (hereinafter sometimes referred to as "cool expansion"). The die bond film, which has been made brittle at low temperatures, is cut into pieces according to the shape of individual semiconductor chips. Next, the dicing tape is expanded at around room temperature (hereinafter sometimes referred to as "normal temperature expansion") to widen the interval between adjacent semiconductor chips with die bond films (hereinafter sometimes referred to as "kerf width"), Finally, a semiconductor chip with a die-bonding film can be obtained by peeling it off from the adhesive layer of the dicing tape using a pickup.

However, in the SDBG method, depending on the performance of the dicing tape used, as the amount of expansion in the room temperature expansion process increases, the portion of the dicing tape pushed up by the expand ring may expand, causing the expansion table to lower after room temperature expansion. When the expanded state is released, slack will occur in that part, and if the slack is left untreated, the gap (kerf width) between adjacent semiconductor chips with die-bond films will narrow or become uneven, causing A problem sometimes arises in that the kerf width immediately after expansion cannot be maintained sufficiently. If the kerf width is not maintained sufficiently, it may not be possible to properly pick up the semiconductor chip with the die bond film from the adhesive layer of the dicing tape in the later pick-up process. Damage caused by inter-chip contact or re-adhesion caused by contact between adhesive layers may occur in semiconductor chips, which may reduce the pickup yield.

Therefore, as a method to solve the above problem, the die bond film (adhesive layer) is broken by expanding, and after releasing the expanded state, the slack part of the dicing tape is contracted by heating, and the adjacent semiconductor with die bond film is Methods for maintaining the interval (kerf width) between chips have been proposed (for example, Patent Documents 1 to 3).

Patent Document 1 discloses a die bond film, a laminated portion disposed on the die bond film, and a laminated portion for the purpose of providing a dicing tape that can remove slack in the dicing tape and prevent contact between semiconductor chips. Disclosed is a dicing die-bonding film comprising a dicing tape having a peripheral portion disposed around the periphery of the dicing tape, the shrinkage rate of the peripheral portion being 0.1% or more at 130° C. to 160° C.

Furthermore, in Patent Document 2, for the purpose of providing a dicing sheet that can remove slack and prevent contact between semiconductor elements, the dicing sheet is shrunk by heating at 100°C for 1 minute, and is shrunk in the MD direction before heating. A dicing sheet is disclosed in which the second length in the MD direction after heating is 95% or less with respect to the first length of 100%.

Furthermore, Patent Document 3 discloses a tape for semiconductor processing that has a low thermal shrinkage rate and shrinks uniformly regardless of the direction of the tape, so that the kerf width expands uniformly without wrinkles or shifting of the chip position. The tape has a heat shrinkage ratio of 0% to 20% in both the longitudinal and width directions when heated at 100°C for 10 seconds, and Disclosed is a tape for semiconductor processing characterized in that when any one of the ratios is 0.1% or more, the heat shrinkage ratio in the longitudinal direction/the heat shrinkage ratio in the width direction is 0.01 or more and 100 or less. .

Japanese Patent Application Publication No. 2015-211081 Japanese Patent Application Publication No. 2016-115775 International Publication No. 2016/152957

By the way, as a method for removing the slack of the dicing tape caused by room-temperature expansion by heat shrinkage (hereinafter sometimes referred to as "heat shrink"), a plurality of cut semiconductor chips (dies) with die-bonding films are generally used. There is a method of heating and shrinking a dicing tape that has become slack in its outer part than the pasted area by applying hot air from the adhesive layer side of the dicing tape by rotating a pair of hot air blowing nozzles. used. By using this heat shrink process, the area inside the outside part of the dicing tape (the area where a plurality of cut semiconductor chips (dies) with die-bonding films are attached) is placed under tension where a predetermined amount of tension is applied. As a result, the spacing (kerf width) between the individual die-bonding film-attached semiconductor chips that was formed and secured when expanded at room temperature can be maintained. Then, in the subsequent pick-up process, each semiconductor chip with a die bond film can be peeled off from the adhesive layer of the dicing tape without mutual interference with adjacent semiconductor chips, and semiconductor chips with a die bond film can be obtained with a high yield. Can be done.

The dicing tape described in Patent Document 1 has a shrinkage rate of 0.1% or more at 130°C to 160°C. requires relatively high heating temperatures and long heating times. Therefore, hot air from a heated dryer or the like affects the die bond film (adhesive layer) near the outer periphery of the semiconductor wafer, and a part of the die bond film melts, causing the adjacent die bond film ( Contact between the adhesive layers (adhesive layers) may cause re-adhesion, damage to the edge of the semiconductor chip, etc., and there is a risk that the pick-up yield of the semiconductor chip with the die-bonding film may be reduced.

In addition, the dicing sheet described in Patent Document 2 shrinks by heating at 100°C for 1 minute, and the second length in the MD direction after heating is 100% of the first length in the MD direction before heating. The ratio is below 95%. Furthermore, in the tape for semiconductor processing described in Patent Document 3, the thermal contraction rate in both the longitudinal direction and the width direction of the tape when heated at 100° C. for 10 seconds is 0% or more and 20% or less. . However, when the hot air blowing nozzle circulates around and heats the dicing sheet or semiconductor processing tape, the temperature near the surface of the dicing sheet or semiconductor processing tape gradually increases. The problem is that it takes time to remove. In addition, there were cases in which the retention of the kerf width was not sufficient.

Therefore, in order to manufacture a semiconductor chip with a die-bonding film with a high yield, the present invention suppresses the narrowing of the kerf width immediately after room temperature expansion, and the heat shrink process after room temperature expansion can be completed in a shorter time than before. It also enables uniform heat shrinkage and maintains a sufficient kerf width to prevent adjoining die bond films (adhesive layers) from coming into contact with each other and re-adhering, and from damaging the edges of the semiconductor chip. The purpose is to provide a dicing tape that can Another object of the present invention is to provide a method for manufacturing semiconductor chips and semiconductor devices using the dicing tape.

Embodiments of the invention are described below.
[Form 1]
A dicing tape comprising a base film and an adhesive layer containing an active energy ray-curable adhesive composition on the base film,
The base film has, in the MD direction,
(1) Tensile strength at 100% stretching at 23°C of 9 MPa or more and 18 MPa or less,
(2) Stress relaxation rate (%) after 100% stretching of 50% or more and holding for 100 seconds = [(AB)/A)] x 100 (1)
(In the formula, A is the tensile load when the base film is stretched 100% at 23°C, and B is the tensile load after the base film is stretched 100% at 23°C and held in that state for 100 seconds. (This is a tensile load.)
Stress relaxation rate after 100% stretching and holding for 100 seconds at 23°C, expressed by (3) 20% or more, heat shrinkage rate after 100% stretching and holding for 100 seconds (%) = [(C-D )/C]×100 (2)
(In the formula, C is the interval between the marked lines when the base film with marked lines attached at predetermined intervals is stretched 100% at 23°C and held in that state for 100 seconds, and D is the interval between the marked lines, A base film with marking lines attached at predetermined intervals is stretched 100% at 23°C, held in that state for 100 seconds, and then heated in a tension-free state at 80°C for 60 seconds to shrink it. (This is the interval between the marked lines after
Heat shrinkage rate after 100% stretching and holding for 100 seconds at 80°C, expressed as
has
The adhesive layer is
A dicing tape having a thermal resistance of 0.45K·cm ² /W or less.

[Form 2]
The base film is a resin composed of a resin composition containing a thermoplastic crosslinked resin (IO) made of an ionomer of an ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid ester copolymer and a polyamide resin (PA). The dicing tape according to Form 1, which is a film.

[Form 3]
The dicing tape according to Form 1 or 2, wherein the adhesive layer has a thermal resistance of 0.35 K·cm ² /W or less.

[Form 4]
The adhesive layer is
(1) An adhesive composition comprising an acrylic adhesive polymer having a photosensitive carbon-carbon double bond and a functional group, a photopolymerization initiator, and a crosslinking agent that reacts with the functional group;
(2) an adhesive composition further comprising a thermally conductive filler in the adhesive composition of (1);
(3) an adhesive composition comprising an acrylic adhesive polymer having a functional group, an active energy ray-curable compound, a photopolymerization initiator, and a crosslinking agent that reacts with the functional group;
(4) an adhesive composition further comprising a thermally conductive filler in the adhesive composition of (3);
The dicing tape according to any one of Forms 1 to 3, which contains any one active energy ray-curable adhesive composition selected from the group consisting of:

[Form 5]
A method for manufacturing a semiconductor chip and a semiconductor device, using a dicing tape of any one of Forms 1 to 4.

According to the present invention, it is possible to suppress narrowing of the kerf width immediately after room temperature expansion, and to heat-shrink the dicing tape sufficiently and uniformly in a shorter time than before in the heat shrink process after room temperature expansion. Therefore, the widened kerf width can be sufficiently maintained to the extent that it is possible to prevent adjacent die bond films (adhesive layers) from coming into contact with each other and re-adhering, and from damaging the edges of the semiconductor chip. As a result, a dicing tape with excellent pick-up properties for semiconductor chips with a die-bonding film is provided.

1 is a cross-sectional view showing an example of the structure of a base film of a dicing tape to which this embodiment is applied. FIG. 1 is a cross-sectional view showing an example of the configuration of a dicing tape to which this embodiment is applied. 1 is a cross-sectional view showing an example of a dicing die-bonding film having a configuration in which a dicing tape to which the present embodiment is applied is bonded to a die-bonding film. It is a flow chart explaining a manufacturing method of a dicing tape. It is a flowchart explaining the manufacturing method of a semiconductor chip. FIG. 2 is a perspective view showing a state in which a ring frame (wafer ring) is attached to the outer edge of a dicing die bond film, and a semiconductor wafer separated into pieces is attached to the center of the die bond film. (a) to (f) are cross sections showing an example of the process of grinding a semiconductor wafer in which a plurality of modified regions have been formed by laser beam irradiation and the process of bonding a plurality of cut semiconductor wafers to a dicing die bond film. It is a diagram. (a) to (f) are cross-sectional views showing an example of manufacturing a semiconductor chip using a plurality of cut thin film semiconductor wafers to which dicing die-bonding films are bonded. 1 is a schematic cross-sectional view of one embodiment of a semiconductor device having a stacked structure using a semiconductor chip manufactured using a dicing die bond film to which this embodiment is applied. FIG. 7 is a schematic cross-sectional view of another embodiment of a semiconductor device using a semiconductor chip manufactured using a dicing die-bonding film to which this embodiment is applied. FIG. 3 is a plan view for explaining a method of measuring the distance between semiconductor chips (kerf width) after expansion. 12 is an enlarged plan view of the center of the semiconductor wafer in FIG. 11. FIG.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings as necessary. However, the present invention is not limited to the following embodiments.

<Configuration of dicing tape and dicing die bond film>
FIGS. 1A to 1D are cross-sectional views showing an example of the structure of a base film 1 of a dicing tape to which this embodiment is applied. The base film 1 of the dicing tape of this embodiment may be a single layer of a single resin composition (see (a) 1-A in FIG. 1), or may be composed of multiple layers of the same resin composition. It may be a laminate (see (b) 1-B in FIG. 1), or a laminate consisting of multiple layers of different resin compositions (see (c) 1-C and (d) 1-D in FIG. 1). ). In the case of a laminate consisting of multiple layers, the number of layers is not particularly limited, but is preferably in the range of 2 to 5 layers.

FIG. 2 is a cross-sectional view showing an example of the configuration of a dicing tape to which this embodiment is applied. As shown in FIG. 2, the dicing tape 10 has a configuration in which an adhesive layer 2 is provided on the first surface of a base film 1. Although not shown, the surface of the adhesive layer 2 of the dicing tape 10 (the surface opposite to the surface facing the base film 1) is provided with a base sheet (release liner) having releasability. You can leave it there.

The base film 1 has, in the MD direction, (1) tensile strength at 100% stretching at 23°C in the range of 9 MPa or more and 18 MPa or less, (2) stress after 100% stretching at 23°C of 50% or more and holding for 100 seconds. and (3) a heat shrinkage rate after 100% stretching and holding for 100 seconds at 80° C. of 20% or more.

In this specification, "MD (Machine Direction) direction" means the flow (length) direction during film formation of the base film 1.

Moreover, "100% stretching" in the present invention means stretching the base film 1 until it becomes twice the length before stretching. Specifically, for example, using a tensile compression testing machine, both ends of the test piece of the base film 1 in the longitudinal (MD) direction are fixed with chucks so that the initial distance between the chucks is 50 mm, and the distance between the chucks is This means pulling and stretching the test piece of the base film 1 until it reaches 100 mm.

Furthermore, in the present invention, the "stress relaxation rate after 100% stretching and holding for 100 seconds" refers to the tensile load (stress) value at the time of 100% stretching with respect to the tensile load (stress) value at the time when the base film 1 was stretched 100% at a temperature condition of 23 ° C. It is the rate of decrease from the tensile load (stress) value after holding the state with 100% stretching strain for 100 seconds. That is, in the MD direction of the base film 1, the tensile load (stress) value when stretched 100% at a temperature condition of 23 ° C. is A, and the tensile load (stress) value when stretched 100% at a temperature condition of 23 ° C., and the 100% stretching strain is When the tensile load (stress) value after holding the given state for 100 seconds is B, the following formula

Stress relaxation rate (%) after 100% stretching and holding for 100 seconds = [(AB)/A] x 100

Refers to the value calculated from. The direction in which the base film 1 is stretched is the MD direction, and the stress relaxation rate of the base film 1 after being stretched at 100% and held for 100 seconds at 23° C. may be 50% or more. In addition, in this specification, the above-mentioned "stress relaxation rate after 100% stretching and holding for 100 seconds at 23°C" may be simply referred to as "stress relaxation rate."

Furthermore, in the present invention, "heat shrinkage rate after 100% stretching and holding for 100 seconds" refers to the base film 1 that has been stretched 100% at 23°C and held for 100 seconds with the 100% stretching strain applied. , is the ratio of the length of the substrate film 1 contracted by heating to a certain length of the base film 1 before heating when heated at 80° C. in a tension-free state. That is, in the MD direction of the base film 1, the base film 1 on which two marked lines are attached at a predetermined interval is stretched 100% at 23°C, and the 100% stretching strain is maintained for 100 seconds. The interval between the marked lines when held is C, and the base film 1 with two marked lines attached at a predetermined interval is stretched 100% at 23°C, and the 100% stretching strain is maintained at 100%. After holding for seconds, heating in a tension-free state at 80°C for 60 seconds to shrink, when the interval between the marked lines is D, the following formula

Heat shrinkage rate (%) after 100% stretching and holding for 100 seconds = [(CD)/C] x 100

Refers to the value calculated from. The direction in which the base film 1 is stretched is the MD direction, and the heat shrinkage rate of the base film 1 after being stretched for 100 seconds at 80° C. may be 20% or more. In addition, in this specification, the above-mentioned "heat shrinkage rate after 100% stretching and holding for 100 seconds at 80°C" may be simply referred to as "heat shrinkage rate."

The dicing tape 10 of the present invention includes an adhesive layer 2 containing an active energy ray-curable adhesive composition on the ^base film 1. It has the following thermal resistance:
The adhesive layer 2 containing the active energy ray-curable adhesive composition has a property that, for example, when irradiated with active energy rays such as ultraviolet rays (UV), the adhesive layer 2 hardens and shrinks, reducing its adhesive strength to the adherend. has.

The "thermal resistance" of the adhesive layer 2 in the present invention refers to an adhesive layer laminated such that the thickness of the adhesive layer 2 of the dicing tape 10 is L (μm) and the total thickness of the adhesive layer 2 is 1 mm. A laminate consisting of only layers was prepared, and the thermal conductivity of the laminate was measured by the hot wire method using a quick thermal conductivity meter "QTM-500 (model)" manufactured by Kyoto Electronics Co., Ltd. /m・K), the following formula

Thermal resistance (K cm ² /W) = (L/100)/λ

Refers to the value calculated from . The smaller the value of the thermal resistance of the adhesive layer 2, the better the thermal conductivity of the adhesive layer 2. That is, as described above, in the heat shrink process of the dicing tape 10, a method is used in which hot air is applied to the adhesive layer 2 side of the dicing tape 10 where the slack has occurred to heat and shrink the adhesive layer 2. The smaller the thermal resistance value, the more efficiently the applied heat can be transferred from the adhesive layer 2 to the base film 1, so the base film 1 can be uniformly and sufficiently heated in a short time. Convenient for shrinking.

The dicing tape 10 having such a configuration is used in the semiconductor manufacturing process, for example, as follows. A plurality of pieces are formed on the adhesive layer 2 of the dicing tape 10 by back-grinding a semiconductor wafer on which dividing grooves are formed on the surface using a blade or a semiconductor wafer on which a modified layer is formed inside using a laser. The diced semiconductor chips are pasted and held (temporarily fixed) via a die bond film (adhesive layer), and the die bond film is cut into pieces according to the shape of each chip by cool expansion. , the kerf width between the semiconductor chips is sufficiently expanded through room temperature expansion and heat shrinking processes, and in the subsequent pick-up process, a jig is pushed up from the bottom side of the dicing tape to remove each semiconductor chip with a die bond film onto the dicing tape 10. The adhesive layer 2 is peeled off. The obtained semiconductor chip with a die bond film is fixed to an adherend such as a lead frame, a wiring board, or another semiconductor chip using the die bond film.

FIG. 3 is a cross-sectional view showing an example of a so-called dicing die bond film, which is a structure in which the dicing tape 10 to which this embodiment is applied is bonded and integrated with the die bond film (adhesive layer) 3. As shown in FIG. 3, the dicing die bond film 20 has a structure in which a die bond film (adhesive layer) 3 is releasably adhered and laminated on the adhesive layer 2 of the dicing tape 10.

The dicing die bond film 20 having such a configuration is used in the semiconductor manufacturing process, for example, as follows. On the die bond film 3 of the dicing die bond film 20, a plurality of wafers are obtained by back grinding a semiconductor wafer with dividing grooves formed on the surface by a blade or a semiconductor wafer with a modified layer formed inside by a laser. The diced semiconductor chips are pasted and held (glued), and the die bond film 3, which has been made brittle at low temperatures by cool expansion, is cut according to the shape of the individual diced semiconductor chips, and the die bond film 3 is cut into pieces according to the shape of the individual semiconductor chips. to obtain a semiconductor chip. Next, after the kerf width between the die-bonding film-attached semiconductor chips is sufficiently expanded by room-temperature expansion and heat-shrinking steps, the individual die-bonding film-attached semiconductor chips are peeled off from the adhesive layer 2 of the dicing tape 10 by a pickup step. The obtained semiconductor chip with the die bond film (adhesive film) 3 is fixed to an adherend such as a lead frame, a wiring board, or another semiconductor chip via the die bond film (adhesive film) 3. Although not shown, the surface of the adhesive layer 2 of the dicing tape 10 (the surface opposite to the surface facing the base film 1) and the surface of the die bonding film 3 (the surface facing the adhesive layer 2) The opposite surface) may be provided with a base sheet (release liner) having releasability, and may be peeled off as appropriate during use.

<Dicing tape>
(Base film)
The base film 1 having the first constituent feature in the dicing tape 10 of the present invention will be described below.

[Tensile strength of base film]
The base film 1 has a tensile strength at 100% stretching at 23° C. in a range of 9 MPa or more and 18 MPa or less.

If the tensile strength of the base film 1 at 100% stretching at 23° C. is less than 9 MPa, even if external stress is applied to the dicing tape 10 by expanding, it will not be sufficiently transmitted to the die bonding film 3. There is a possibility that the film 3 will not be cut properly. Furthermore, if the tensile strength is too low, there is a risk that the interval (kerf width) between individual semiconductor chips with die bond films cannot be sufficiently widened during the room temperature expansion process, and the dicing tape 10 becomes soft and difficult to handle. may become difficult.

When the tensile strength of the base film 1 at 100% stretching at 23° C. exceeds 18 MPa, if the tensile strength is too large, it may be difficult to expand the dicing tape 10. Furthermore, the rigidity of the base film 1 may increase, leading to poor pick-up properties.

The dicing tape 10 has good expandability because the tensile strength of the base film 1 at 100% stretching at 23° C. is in the range of 9 MPa or more and 18 MPa or less. That is, in the cool expansion step, sufficient external stress is applied to the die bond film 3 to break the die bond film 3 that is in close contact with the adhesive layer 2 containing the active energy ray curable adhesive composition described below. In addition, in the room temperature expansion process, the interval (kerf width) between individual semiconductor chips with die bond films can be sufficiently widened during expansion. From the viewpoint of expandability, the tensile strength of the base film 1 at 100% stretching at 23° C. is more preferably in the range of 11 MPa or more and 16 MPa or less.

[Stress relaxation rate of base film]
The base film 1 has a tensile strength of 9 MPa or more and 18 MPa or less at 100% stretching at 23°C, and a stress relaxation rate of 50% or more after 100% stretching and holding for 100 seconds at 23°C. There is. As a result, the stress generated in the base film 1 when the dicing tape 10 is expanded at room temperature is quickly reduced to a sufficiently low value. In the part of the dicing tape only (the part where there is no semiconductor chip with die bond film) that corresponds to the interval (kerf width) between individual semiconductor chips with die bond film, when the expanded state is released, the force that tends to shrink due to elasticity is Reduced, alleviated. As a result, even if the expanded state is canceled when moving to the next process or during storage, the kerf width will shrink slightly, but it will not shrink excessively from the original spacing, and it will hold relatively well. easy to be Further, it is easy to prevent the adhesive layers attached to the chips from coming into contact with each other. From the viewpoint of kerf width retention, the stress relaxation rate after 100 seconds of 100% stretching of the base film 1 is preferably 55% or more.

Regarding the upper limit of the stress relaxation rate after 100 seconds of 100% stretching of the base film 1, the base film 1 has appropriate rigidity and is a die bond film for stably dicing a plurality of singulated semiconductor chips. From the viewpoint of making it possible to laminate the film by pasting it on the film 20, and from the viewpoint of ensuring a certain restoring force against tension (stretching) when heated, it is preferably 70%, and more preferably 65%.

[Heat shrinkage rate of base film]
Furthermore, the base film 1 has a heat shrinkage rate of 20% or more after 100% stretching and holding for 100 seconds at 80°C. As a result, when the dicing tape 10 is expanded at room temperature, hot air is blown against the slack that occurs outside the area where the plurality of cut semiconductor chips with die-bonding films are attached. It can be easily resolved and removed. As a result, the area inside the outer part of the dicing tape 10 (the area where a plurality of cut semiconductor chips (dies) with die-bonding films are attached) reaches a tension state where a predetermined tension is applied, so that the area is kept at room temperature. It is possible to maintain the spacing (kerf width) between individual semiconductor chips with die bond films that was formed and secured when expanded.

The upper limit of the heat shrinkage rate of the base film 1 after 100% stretching at 80°C and holding for 100 seconds is determined to be 35 %, more preferably 30%.

[Resin composition constituting the base film]
The material and form of the base film 1 are not particularly limited as long as they simultaneously satisfy the above properties, that is, tensile strength, stress relaxation rate, and heat shrinkage rate, but as a preferred embodiment, specifically, For example, a thermoplastic crosslinked resin (IO) made of an ionomer of ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer (hereinafter sometimes simply referred to as "resin made of ionomer" or "ionomer") Examples include a resin film composed of a resin composition containing a polyamide resin (PA) and a polyamide resin (PA). The thermoplastic crosslinked resin (IO) made of the ionomer of the ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer has at least a portion of the carboxyl groups of the unsaturated carboxylic acid as a metal (ion). Compared to polyamide resin (PA), which is a non-crosslinked thermoplastic resin, when made into a resin film, it has a greater restoring force when heated against stretching, and can be stretched by a room temperature expansion process. When heat is applied to this state, entropic elasticity acts strongly and the contraction stress becomes large. Therefore, after the room temperature expansion process, the slack generated in the dicing tape 10 outside the area where the plurality of cut semiconductor chips with die-bonding films are attached is removed by heat shrinkage, and the dicing tape 10 is expanded by the shrinkage stress. It is excellent in that the distance (kerf width) between individual semiconductor chips with die-bonding films can be maintained stably by applying tension. On the other hand, at room temperature, the ionomer has a moderate ease of plastic deformation, that is, a moderate stress relaxation property, due to the portion without a network structure in the ionomer. Therefore, (1) after the cool expansion process, once the expanded state is released and the temperature is returned to room temperature, (2) immediately after the room temperature expansion process, (3) when proceeding to the subsequent pick-up process, mounting process, etc., or when storing Since the dicing tape 10 tends not to shrink easily over time, it is advantageous in that it can reduce the kerf width and prevent adhesive layers attached to semiconductor chips from coming into contact with each other. On the other hand, polyamide resin (PA), which is a non-crosslinked thermoplastic resin, has a lower restoring force against stretching when made into a resin film than an ionomer, which is a thermoplastic crosslinked resin, but has a high tensile strength. Become. Therefore, when mixed with a resin made of the above-mentioned ionomer to form a resin film, the external stress applied in the expanding process is well transmitted, and the breakability of the die bond film 3 and the expandability of the kerf width of the dicing tape 10 are further improved. It is excellent in that it allows Further, since it is possible to impart appropriate heat resistance while maintaining heat shrinkability, it is possible to prevent the dicing tape 10 from being thermally deformed more than necessary when heated in the heat shrink process. Therefore, it is possible to realize a uniform tension state in which deformation such as heat wrinkles is reduced in the dicing tape 10 after heat shrinkage, and it is also excellent in that variations in the kerf width can be suppressed.

As the material of the base film 1, a mixed resin containing a thermoplastic crosslinked resin (IO) consisting of an ionomer of an ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer and a polyamide resin (PA) was used. In this case, the physical properties of the base film 1 are such that it has a well-balanced heat shrinkability and stress relaxation property, and also has an appropriate tensile strength while maintaining both of these properties. A resin film formed using these resin compositions can be suitably used as the base film 1.

The total amount of the thermoplastic crosslinked resin (IO) consisting of an ionomer of ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer and polyamide resin (PA) in the entire base film 1 is As long as the tensile strength, stress relaxation rate, and thermal shrinkage rate of the base film 1 are within the above ranges, there is no particular limitation, but at least 65% by mass or more based on the total amount of the resin composition constituting the entire base film 1. It is preferable that the proportion is as follows. More preferably, it is 75% by mass, still more preferably 85% by mass, and particularly preferably 100% by mass, which is the upper limit of the ratio.

The dicing tape 10 using the base film 1 having such a structure can be used in a cool expand process or a room temperature expand process in the manufacturing process of semiconductor devices in a form in which the die bond film 3 is adhered onto the adhesive layer 2. It is suitable for That is, the cool expansion process is suitable for properly cleaving the die bond film according to the shape of each individual semiconductor chip that has already been diced, and obtaining semiconductor chips with individual die bond films 3 of a predetermined size at a high yield. . Furthermore, even in the room temperature expansion process, the stretchability necessary to ensure a sufficient kerf width between semiconductor chips is maintained.

[Thermoplastic crosslinked resin (IO) consisting of an ionomer of ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer]
In the base film 1 of this embodiment, the thermoplastic crosslinked resin (IO) made of an ionomer of ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer is ethylene/unsaturated carboxylic acid/unsaturated A part or all of the carboxyl groups of the carboxylic acid alkyl ester copolymer are neutralized with a metal (ion).

The ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer constituting the above ionomer is at least a ternary copolymer of ethylene, unsaturated carboxylic acid, and unsaturated carboxylic acid alkyl ester. It may also be a quaternary or higher copolymer copolymerized with a fourth copolymer component. The ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer may be used alone, or two or more ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymers may be used. may be used together.

Examples of the unsaturated carboxylic acids constituting the ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester terpolymer include acrylic acid, methacrylic acid, ethacrylic acid, itaconic acid, itaconic anhydride, and fumaric acid. , crotonic acid, maleic acid, maleic anhydride, and other unsaturated carboxylic acids having 4 to 8 carbon atoms. In particular, acrylic acid or methacrylic acid is preferred.

Examples of the unsaturated carboxylic acid alkyl ester constituting the ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester terpolymer include methyl acrylate, ethyl acrylate, isobutyl acrylate (acrylic acid 2- carbon in the alkyl moiety of methyl-propyl acrylate), n-butyl acrylate, isooctyl acrylate, methyl methacrylate, ethyl methacrylate, isobutyl methacrylate (2-methyl-propyl methacrylate), dimethyl maleate, diethyl maleate, etc. Examples include (meth)acrylic acid alkyl esters having a number of 1 to 12. Among these, (meth)acrylic acid alkyl esters having 1 to 4 carbon atoms in the alkyl moiety are preferred. From the viewpoint of uniform expandability including suppression of necking phenomenon during expansion of the dicing tape 10, in particular, ethyl acrylate, isobutyl acrylate (2-methyl-propyl acrylate), ethyl methacrylate, isobutyl methacrylate (methacrylate) 2-methyl-propyl acid) and the like are preferred.

When the ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester terpolymer is a quaternary or higher copolymer, the ethylene, unsaturated carboxylic acid, and unsaturated carboxylic acid constituting the terpolymer are In addition to the saturated carboxylic acid alkyl ester, a fourth copolymerization component forming a multicomponent copolymer may be included. The fourth copolymerization component includes unsaturated hydrocarbons (e.g., propylene, butene, 1,3-butadiene, pentene, 1,3-pentadiene, 1-hexene, etc.), vinyl esters (e.g., vinyl acetate, propionic acid, etc.). vinyl, etc.), oxides such as vinyl sulfuric acid and vinyl nitric acid, halogen compounds (eg, vinyl chloride, vinyl fluoride, etc.), vinyl group-containing primary, secondary amine compounds, carbon monoxide, sulfur dioxide, and the like.

The form of the above-mentioned ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer may be a block copolymer, a random copolymer, or a graft copolymer, and may be a terpolymer, Any quaternary copolymer may be used. Among these, ternary random copolymers and graft copolymers of ternary random copolymers are preferred, and ternary random copolymers are more preferred because they are industrially available.

Specific examples of the above-mentioned ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymers include ethylene/methacrylic acid/2-methyl-propyl acrylate copolymer, ethylene/methacrylic acid/ethyl methacrylate, etc. Examples include terpolymers. Furthermore, commercially available products such as ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymers may be used, such as the Nucrel series (registered trademark) manufactured by DuPont Mitsui Polychemicals Co., Ltd. can be used.

The copolymerization ratio (mass ratio) of the unsaturated carboxylic acid ester in the above-mentioned ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer is preferably in the range of 1% by mass to 20% by mass. From the viewpoint of stretchability in the expanding step and heat resistance (blocking, fusion), the content is more preferably in the range of 5% by mass to 15% by mass.

In the base film 1 of this embodiment, the ionomer used as the resin (IO) is such that the carboxyl groups contained in the ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer are mixed with metal ions in an arbitrary proportion. Preferably, those crosslinked (neutralized) with Examples of metal ions used to neutralize acid groups include metal ions such as lithium ions, sodium ions, potassium ions, rubidium ions, cesium ions, zinc ions, magnesium ions, and manganese ions. Among these metal ions, magnesium ions, sodium ions, and zinc ions are preferred, and sodium ions and zinc ions are more preferred from the viewpoint of easy availability of industrialized products.

The degree of neutralization of the ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer in the above ionomer is preferably in the range of 10 mol% or more and 85 mol% or less, and 15 mol% or more and 82 mol% or less. It is more preferable that it is in the range of . By setting the neutralization degree to 10 mol% or more, the breakability of the semiconductor wafer with a die-bonding film can be further improved, and by setting it to 85 mol% or less, the film formability can be improved. Can be done. Note that the degree of neutralization is the blending ratio (mol %) of metal ions to the number of moles of acid groups, particularly carboxyl groups, possessed by the ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer.

The resin (IO) made of the above ionomer has a melting point of about 85 to 100°C, but the melt flow rate (MFR) of the resin (A) made of the ionomer is 0.2 g/10 minutes or more and 20.0 g/10 min. It is preferably in the range of 10 minutes or less, more preferably in the range of 0.5 g/10 minutes or more and 20.0 g/10 minutes or less, and in the range of 0.5 g/10 minutes or more and 18.0 g/10 minutes or less. It is more preferable that When the melt flow rate is within the above range, the film formability as the base film 1 will be good. Note that MFR is a value measured at 190° C. and a load of 2160 g by a method based on JIS K7210-1999.

The resin composition constituting the base film 1 of this embodiment includes, in addition to the thermoplastic crosslinked resin (IO) made of the above-mentioned ionomer of ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer. , further includes a polyamide resin (PA), which will be described later. In the base film 1, from the viewpoint of stably expressing the physical properties of tensile strength, stress relaxation rate, and heat shrinkage rate described above in a well-balanced manner, the above-mentioned ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer is used. The mass ratio (IO):(PA) of the thermoplastic crosslinked resin (IO) consisting of an ionomer and the polyamide resin (PA) is not particularly limited, but is preferably in the range of 72:28 to 95:5. More preferably, the range is 74:26 to 92:8, and still more preferably 80:20 to 90:10. Note that the upper and lower limits of the numerical ranges in this specification can be arbitrarily selected and combined. The heat resistance of the base film 1 can be improved by configuring the base film 1 with a resin composition in which a resin (IO) made of an ionomer and a polyamide resin (PA) are mixed in the above range. In addition, it is possible to increase the tensile stress when stretched at low temperatures (for example, -15°C), and for the dicing tape 10 using the base film 1, die bond A good cutting force can be applied to separate the semiconductor wafer with the film 3 into pieces with a high yield, and furthermore, in the room-temperature expansion process, the film has good tensile strength, stretchability, and stress relaxation that can ensure a sufficient kerf width between semiconductor chips. In the heat shrinking process, it is possible to provide good heat shrinkability that can maintain the expanded kerf width.

[Polyamide resin (PA)]
Examples of the polyamide resin (PA) include carboxylic acids such as oxalic acid, adipic acid, sebacic acid, dodecanoic acid, terephthalic acid, isophthalic acid, and 1,4-cyclohexanedicarboxylic acid, and ethylenediamine, tetramethylenediamine, and pentamethylene. Diamines, polycondensates with diamines such as hexamethylene diamine, decamethylene diamine, 1,4-cyclohexyl diamine, m-xylylene diamine, cyclic lactam ring-opening polymers such as ε-caprolactam and ω-laurolactam, 6- Examples include polycondensates of aminocarboxylic acids such as aminocaproic acid, 9-aminononanoic acid, 11-aminoundecanoic acid, and 12-aminododecanoic acid, or copolymers of the above-mentioned cyclic lactams, dicarboxylic acids, and diamines.

A commercially available product can also be used as the polyamide resin (PA). Specifically, nylon 4 (melting point 268°C), nylon 6 (melting point 225°C), nylon 46 (melting point 240°C), nylon 66 (melting point 265°C), nylon 610 (melting point 222°C), nylon 612 (melting point 215°C). ), nylon 6T (melting point 260°C), nylon 11 (melting point 185°C), nylon 12 (melting point 175°C), copolymer nylon (e.g. nylon 6/66, nylon 6/12, nylon 6/610, nylon 66/12, nylon 6/66/610, etc.), nylon MXD6 (melting point: 237° C.), nylon 46, etc. Among these polyamides, nylon 6 and nylon 6/12 are preferred from the viewpoint of film formability and mechanical properties as the base film 1.

Although the content of the polyamide resin (PA) is not particularly limited, the thermoplastic crosslinked resin (IO ) and the polyamide resin (PA), the mass ratio (IO):(PA) is preferably in the range of 72:28 to 95:5. If the mass ratio of the polyamide resin (PA) is less than the above range, the effect of increasing the tensile strength of the base film 1 during expansion may be insufficient. On the other hand, if the mass ratio of the polyamide resin (PA) exceeds the above range, it may be difficult to form a stable film depending on the resin composition of the base film 1, or the heat shrinkability in the heat shrink process may be insufficient. There is a risk that this may occur. In addition, there is a risk that the flexibility of the base film 1 may be impaired, making it impossible to maintain its stretchability in the room temperature expansion process, and when picking up a semiconductor chip with the die-bonding film 3 attached, there is a risk that pick-up failures may occur due to cracks in the semiconductor chip, etc. be. The content of the polyamide resin (PA) in the entire base film 1 is determined by the thermoplastic crosslinked resin (IO) made of the ionomer of the ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer and the polyamide resin. The mass ratio (IO):(PA) of (PA) is more preferably in the range of 74:26 to 92:8, and more preferably in the range of 80:20 to 90:10. More preferred.

In addition, when the base film 1 is a laminate consisting of multiple layers, a thermoplastic crosslinked resin (IO) consisting of an ionomer of the above-mentioned ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer and the above polyamide resin are used. (PA) means the mass ratio of thermoplastic crosslinked resin (IO) consisting of an ionomer of ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer to polyamide resin (PA) in each layer. and the mass ratio of each layer in the entire base film 1 (laminate).

[Other ingredients]
Other resins and various additives may be added to the resin composition constituting the base film 1 as necessary, as long as the effects of the present invention are not impaired. Examples of the other resins include polyolefins such as polyethylene and polypropylene, ethylene/unsaturated carboxylic acid copolymers, ethylene/unsaturated carboxylic acid alkyl ester copolymers, ethylene/α-olefin copolymers, etc. Examples include ethylene copolymers, polyolefin-polyether block copolymers, and polyetheresteramides. Such other resins include the thermoplastic crosslinked resin (IO) made of the ionomer of the ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer and the polyamide resin (PA) in a total of 100 parts by mass. On the other hand, it can be blended in a proportion of, for example, 20 parts by mass. In addition, examples of the above-mentioned additives include antistatic agents, antioxidants, heat stabilizers, light stabilizers, ultraviolet absorbers, pigments, dyes, lubricants, antiblocking agents, antifungal agents, antibacterial agents, flame retardants, Examples include flame retardant aids, crosslinking agents, crosslinking aids, foaming agents, foaming aids, inorganic fillers, and fiber reinforcing materials. These various additives are added to a total of 100 parts by mass of the thermoplastic crosslinked resin (IO) consisting of the ionomer of the ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer and the polyamide resin (PA). On the other hand, it can be blended in a proportion of, for example, 5 parts by mass.

[Vicat softening point of the resin composition constituting the base film]
When the base film 1 is composed of a single layer of a single resin composition or a laminate consisting of multiple layers of the same resin composition, the Vicat softening point of the resin composition is not particularly limited, but the heat shrinkage From the viewpoint of performance, the temperature is preferably in the range of 57°C or higher and lower than 80°C. Since the Vicat softening point of the resin composition of the base film 1 is within the above range, the base film 1 stretched during normal temperature expansion can have a surface temperature of, for example, a slack portion of about 80°C during the heat shrink process. When hot air is blown onto the material so that the temperature is 0.degree. As a result, it becomes easy to eliminate slack in the dicing tape 10 and maintain the kerf width. The Vicat softening point of the resin composition of the base film 1 is more preferably in the range of 60°C or more and 75°C or less, and still more preferably in the range of 61°C or more and 70°C or less. If the Vicat softening point of the resin composition of the base film 1 is less than 57° C., especially if the value is too low, blocking may occur during the base film formation or the dicing tape manufacture. In the heat shrink process, the resin is excessively softened and fluidized during heating, which may cause the dicing tape 10 to deform more than necessary. If the Vicat softening point of the resin material of the base film 1 is 80°C or higher, especially if the value is excessively high, the stretched base film 1 during room temperature expansion may have a lower surface temperature, for example, at a slack portion. When hot air is blown so that the temperature is approximately 80°C, the stretched and oriented molecules become difficult to return to their original state, and the slack in the dicing tape 10 is not fully eliminated, making it difficult to maintain the kerf width. It may become difficult. Note that the Vicat softening point of the resin composition of the base film 1 can be measured, for example, by a method based on JIS K7206.

When the base film 1 is constituted by a laminate consisting of multiple layers of different resin compositions, from the viewpoint of heat shrinkability, the Vicat softening point of any resin composition constituting each layer is 57°C or higher and 80°C. The mass of the layer composed of a resin composition having a Vicat softening point of 57°C or more and less than 80°C is preferably within a range of less than 80°C, with respect to the total amount of the resin composition constituting the entire base film 1. The Vicat softening point of the resin composition of the layer occupying the remaining 35% by mass or less may be lower than 57°C or higher than 80°C. For example, the Vicat softening point of the resin composition of the layer that accounts for the remaining 35% by mass or less may be in the range of 40°C or more and less than 57°C or 80°C or more and 85°C or less.

[Thickness of base film]
The thickness of the base film 1 is not particularly limited, but considering its use as the dicing tape 10, it is preferably in the range of, for example, 60 μm or more and 150 μm or less. More preferably, it is in the range of 70 μm or more and 120 μm or less. If the thickness of the base film 1 is less than 60 μm, there is a risk that the ring frame (wafer ring) may not be held sufficiently when the dicing tape 10 is subjected to a dicing process. Furthermore, if the thickness of the base film 1 is greater than 150 μm, there is a risk that the base film 1 will warp more due to release of residual stress during film formation. Furthermore, when the base film 1 or the dicing tape 10 is wound up into a long roll, there is a possibility that step marks may be formed on the winding core.

[Structure of base film]
The structure of the base film 1 is not particularly limited, and may be a single layer of a single resin composition, a laminate consisting of multiple layers of the same resin composition, or a laminate of multiple layers of the same resin composition. It may also be a laminate consisting of multiple layers of the composition. In the case of a laminate consisting of multiple layers, the number of layers is not particularly limited, but is preferably in the range of 2 to 5 layers, more preferably 2 or 3 layers.

When the base film 1 is a laminate consisting of a plurality of layers, for example, it may have a structure in which a plurality of layers formed using the above-mentioned resin composition exemplified as a preferred embodiment of the present embodiment are laminated. Yes, the above-mentioned resin composition exemplified as a preferred embodiment of this embodiment may be used in a layer formed using the above-mentioned resin composition exemplified as a preferred embodiment of this embodiment, within a range that does not impede the effects of the present invention. It may also have a structure in which layers formed using a resin composition other than the above resin composition are laminated.

Layers formed using other resin compositions include, for example, linear low-density polyethylene (LLDPE), low-density polyethylene (LDPE), ethylene/α-olefin copolymer, polypropylene, ethylene/unsaturated Carboxylic acid copolymer, ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester terpolymer, ethylene/unsaturated carboxylic acid alkyl ester copolymer, ethylene/vinyl ester copolymer, ethylene/unsaturated carboxylic acid copolymer Resin compositions such as acid alkyl ester/carbon monoxide copolymers, unsaturated carboxylic acid grafts thereof, single substances or blends of any plurality thereof, ionomers of ethylene/unsaturated carboxylic acid copolymers, etc. Examples include layers formed using a material. Among these, a resin composition containing a thermoplastic crosslinked resin (IO) consisting of an ionomer of an ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer and a polyamide resin (PA) according to a preferred embodiment of the present invention. From the viewpoint of adhesion with the resin layer made of the material, balance control of the physical properties of the base film 1, and versatility, ethylene/unsaturated carboxylic acid copolymer, ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester Preferred are terpolymer copolymers, ethylene/unsaturated carboxylic acid alkyl ester copolymers, ionomers of these copolymers, ethylene/α-olefin copolymers, and the like.

Examples of the case where the base film 1 of this embodiment has a laminated structure include base films having the following two-layer structure, three-layer structure, and the like.

Specifically, the two-layer structure includes, for example,
(1) [Mixture of a thermoplastic crosslinked resin (IO) consisting of an ionomer of the first ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer of the present preferred embodiment and a polyamide resin (PA)] First resin layer made of a resin composition]/[Thermoplastic crosslinked resin (IO) made of an ionomer of a first ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer of the preferred embodiment of the present invention and a second resin layer consisting of a mixed resin composition of polyamide resin (PA)] (two-layer configuration of the same resin layer),

(2) [A mixture of a thermoplastic crosslinked resin (IO) and a polyamide resin (PA) comprising an ionomer of an ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer according to the first preferred embodiment of the present invention [First resin layer consisting of a thermoplastic crosslinked resin (IO) consisting of an ionomer of an ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer and a polyamide resin A second resin layer consisting of a mixture of (PA)] (two-layer configuration of different resin layers),

(3) [First resin layer made of thermoplastic crosslinked resin (IO) made of ionomer of ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer]/[First resin layer of the preferred embodiment of the present invention] A second resin layer consisting of a mixture of a thermoplastic crosslinked resin (IO) consisting of an ionomer of an ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer and a polyamide resin (PA)] Layer structure),

(4) [First resin layer consisting of ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer (E)]/[first ethylene/unsaturated carboxylic acid based copolymer (E) of the preferred embodiment of the present invention] A second resin layer made of a mixture of a thermoplastic crosslinked resin (IO) made of a copolymer ionomer and a polyamide resin (PA)] (two-layer structure of different resin layers),

(5) [Thermoplastic crosslinked resin (IO) consisting of an ionomer of the first ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer of the present preferred embodiment, polyamide resin (PA), and ethylene・First resin layer consisting of mixed resin composition of α-olefin copolymer (EO)]/[First ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer of the preferred embodiment of the present embodiment] A second resin layer consisting of a mixed resin composition of a thermoplastic crosslinked resin (IO) consisting of a combined ionomer and a polyamide resin (PA)] (two-layer structure of different resin layers),
Examples include a two-layer structure (first resin layer/second resin layer) consisting of two layers of the same resin layer or two layers of different resin layers.

Specifically, the three-layer structure includes, for example,
(6) [A mixture of a thermoplastic crosslinked resin (IO) and a polyamide resin (PA) comprising an ionomer of an ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer according to the first preferred embodiment of the present invention [First resin layer consisting of a thermoplastic crosslinked resin (IO) consisting of an ionomer of a first ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer of the preferred embodiment of the present invention] and a polyamide resin [Second resin layer made of a mixture of (PA)]/[Thermoplastic crosslinked resin made of an ionomer of the first ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer of the preferred embodiment of the present invention ( IO) and a third resin layer consisting of a mixture of polyamide resin (PA)] (three-layer configuration of the same resin layer),

(7) [A mixture of a thermoplastic crosslinked resin (IO) and a polyamide resin (PA) comprising an ionomer of an ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer according to the first preferred embodiment of the present invention [First resin layer consisting of a thermoplastic crosslinked resin (IO) consisting of an ionomer of an ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer and a polyamide resin (PA)] / [Thermoplastic crosslinked resin ( IO) and a third resin layer consisting of a mixture of polyamide resin (PA)] (three-layer configuration of two different types of resin layers),

(8) [A mixture of a thermoplastic crosslinked resin (IO) and a polyamide resin (PA) comprising an ionomer of an ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer according to the first preferred embodiment of the present invention [First resin layer consisting of]/[Second resin layer consisting of thermoplastic crosslinked resin (IO) consisting of an ionomer of ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer]/[Suitable for this implementation] A third resin layer consisting of a mixture of a thermoplastic crosslinked resin (IO) consisting of an ionomer of the first ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer in the form of a polyamide resin (PA)] (3-layer structure of 2 types of different resin layers),

(9) [A mixture of a thermoplastic crosslinked resin (IO) and a polyamide resin (PA) comprising an ionomer of the first ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer according to the preferred embodiment of the present invention [first resin layer consisting of]/[second resin layer consisting of ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer (E)]/[first ethylene/ A third resin layer made of a mixture of a thermoplastic crosslinked resin (IO) made of an ionomer of an unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer and a polyamide resin (PA)] (3rd resin layer of two different types of resin layers) Layer structure),

(10) [A mixture of a thermoplastic crosslinked resin (IO) and a polyamide resin (PA) comprising an ionomer of the first ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer according to the preferred embodiment of the present invention [first resin layer consisting of]/[second resin layer consisting of ethylene/α-olefin copolymer (EO)]/[first ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid of the preferred embodiment of the present embodiment] A third resin layer made of a mixture of a thermoplastic crosslinked resin (IO) made of an ionomer of an alkyl ester copolymer and a polyamide resin (PA)] (three-layer structure of two different types of resin layers),
Examples include a three-layer structure (first resin layer/second resin layer/third resin layer) consisting of three layers of the same resin layer or three layers of different resin layers.

[Method for forming base film]
As a method for forming the base film 1 of this embodiment, a conventional method can be adopted. A resin composition obtained by melting and kneading each resin, which is the material of the base film 1, and other components as necessary, is processed by, for example, a T die-casting method, a T-die nip molding method, an inflation molding method, or an extrusion lamination method. It may be processed into a film by various molding methods such as , calendar molding, and the like. In addition, when the base film 1 is a laminate consisting of multiple layers, each layer is formed separately by a method such as a calendar molding method, an extrusion method, or an inflation molding method, and then the layers are thermally laminated or bonded with an adhesive as appropriate. A laminate can be manufactured by laminating the materials by the following method. Examples of the adhesive include a single substance or a blend of any plurality of the above-mentioned ethylene copolymers or unsaturated carboxylic acid grafts thereof. Alternatively, a laminate can also be manufactured by simultaneously extruding the resin compositions of each layer by a coextrusion lamination method. The method of forming and manufacturing the base film 1 as a laminate consisting of multiple layers requires less resin pressure in the extruder and Since the extrusion flow rate can be controlled without excessively increasing the motor load, this is suitable from the viewpoint of film forming accuracy and stable film forming, and unnecessary wrinkles are not generated in the base film 1. In addition, the film forming speed of the base film 1 can be increased, and the physical properties such as the tensile strength, stress relaxation rate, and heat shrinkage rate mentioned above can be adjusted for each layer, so the balance of these physical properties can be achieved as a whole for the base film 1. It is also suitable because it is easy to control. Note that the surface of the base film 1 that is in contact with the adhesive layer 2 may be subjected to corona treatment, plasma treatment, or the like for the purpose of improving adhesion to the adhesive layer 2, which will be described later. In addition, the surface of the base film 1 opposite to the side in contact with the adhesive layer 2 is coated with a shibo roll for the purpose of stabilizing the winding of the base film 1 during film formation and preventing blocking after film formation. An embossing process or the like may be performed.

(Adhesive layer)
The adhesive layer 2 containing the active energy ray-curable adhesive composition, which is the second component of the dicing tape 10 of the present invention, will be described below.

The present inventors have determined that the various physical properties of the base film 1 described above must be controlled within a specific range in order to be able to sufficiently and uniformly heat shrink in a shorter time than before in the heat shrink process after room temperature expansion. Based on the view that it is not sufficient to simply specify the above, we further investigated and found that the thermal resistance of the adhesive layer 2 located on the base film 1 is an important factor. It's arrived. Usually, in the heat shrink process, hot air is blown from the adhesive layer 2 side of the dicing tape 10, so if the adhesive layer 2 has high thermal resistance, the applied heat will not be efficiently transferred to the base film 1. , it becomes difficult to heat-shrink sufficiently and uniformly in a short time. Therefore, if the thermal resistance of the adhesive layer 2 is made smaller than before, the applied heat will be efficiently transferred to the base film 1, making it possible to shrink it by heating in a shorter time than before. As a result, we realized that the kerf width could be maintained sufficiently to prevent adjoining die bond films (adhesive layers) from coming into contact with each other and causing damage or re-adhesion, with a shorter takt time than before. Ta.

That is, the adhesive layer 2 containing the active energy ray-curable adhesive composition of the present invention has a thermal resistance of 0.45 K·cm ² /W or less. If the thermal resistance of the adhesive layer 2 exceeds 0.45Kcm ² /W, for example, in the heat shrink process, the rotation speed of the hot air blowing nozzle (rotation speed of the stage that holds the workpiece) may be set faster than before. In other words, when attempting to shorten the takt time, the slackened dicing tape 10 may not be sufficiently heat-shrinked, so the slack may not be fully eliminated, and as a result, the kerf width may not be maintained sufficiently. There is. The thermal resistance is more preferably 0.35 K·cm ² /W or less, and still more preferably 0.25 K·cm ² /W or less. The lower the thermal resistance is, the better; however, from the viewpoint of maintaining the adhesive properties of the adhesive layer 2 necessary for the dicing tape, the lower limit thereof is 0.15 K·cm ² /W.

Methods for reducing the thermal resistance of the adhesive layer 2 include, for example, (1) reducing the thickness of the adhesive layer 2 as much as possible without impairing the effects of the present invention; (2) reducing the thickness of the adhesive layer 2; One method is to increase the value of thermal conductivity as much as possible.

The adhesive layer 2 of this embodiment includes an active energy ray-curable adhesive composition. Here, the active energy ray-curable adhesive composition refers to an adhesive composition that hardens and shrinks when irradiated with active energy rays such as ultraviolet rays (UV), reducing its adhesive strength to adherends. . The active energy ray-curable adhesive composition contained in the adhesive layer 2 typically includes:
(1) Adhesive composition (A1): Comprising an acrylic adhesive polymer having a photosensitive carbon-carbon double bond and a functional group, a photopolymerization initiator, and a crosslinking agent that reacts with the functional group. adhesive composition,
(2) Adhesive composition (A2): an adhesive composition further comprising a thermally conductive filler in the above-mentioned adhesive composition (A1),
(3) Adhesive composition (B1): an adhesive composition comprising an acrylic adhesive polymer having a functional group, an active energy ray-curable compound, a photopolymerization initiator, and a crosslinking agent that reacts with the functional group. ,
(4) Adhesive composition (B2): an adhesive composition further comprising a thermally conductive filler in the above-mentioned adhesive composition (B1),
Examples include any one pressure-sensitive adhesive composition selected from the group of, but are not particularly limited to.

Among these, pressure-sensitive adhesive composition (A1) and pressure-sensitive adhesive composition (A2) are preferred from the viewpoint of suppressing adhesive residue and staining on die bond film 3. Note that the term "functional group" as used herein refers to a heat-reactive functional group that can coexist with a photosensitive carbon-carbon double bond. Examples of such functional groups are active hydrogen groups such as hydroxyl groups, carboxyl groups and amino groups, and functional groups that thermally react with active hydrogen groups such as glycidyl groups. The active hydrogen group refers to a functional group having an element other than carbon, such as nitrogen, oxygen, or sulfur, and hydrogen directly bonded to the element. In addition, in this specification, the above-mentioned "acrylic adhesive polymer having a photosensitive carbon-carbon double bond and a functional group" may be simply referred to as "active energy ray-curable acrylic adhesive polymer." .

(Adhesive composition (A1))
The adhesive composition (A1) is an adhesive comprising an acrylic adhesive polymer having a photosensitive carbon-carbon double bond and a functional group, a photopolymerization initiator, and a crosslinking agent that reacts with the functional group. It is a composition.

[Acrylic adhesive polymer with photosensitive carbon-carbon double bond and functional group]
In the above adhesive composition (A1), the acrylic adhesive polymer having a photosensitive carbon-carbon double bond and a functional group is one having a carbon-carbon double bond in its molecular side chain. The method for producing an acrylic adhesive polymer having a carbon-carbon double bond and a functional group is not particularly limited, but usually involves combining a (meth)acrylic acid alkyl ester and an unsaturated compound containing a functional group. Copolymerize to obtain an acrylic copolymer, and use a compound having a functional group and a carbon-carbon double bond (active energy ray reactive) that can undergo an addition reaction with the functional group of the acrylic copolymer. A method in which a compound) is subjected to an addition reaction can be mentioned.

The above acrylic copolymer (hereinafter referred to as "acrylic copolymer having a functional group") before addition reaction with a compound having the above functional group and a carbon-carbon double bond (active energy ray-reactive compound) Examples of the copolymers include a (meth)acrylic acid alkyl ester monomer, an active hydrogen group-containing monomer, and/or a glycidyl group-containing monomer.

Examples of the (meth)acrylic acid alkyl ester monomer include hexyl (meth)acrylate having 6 to 18 carbon atoms, n-octyl (meth)acrylate, isooctyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, and nonyl (meth)acrylate, isononyl (meth)acrylate, decyl (meth)acrylate, isodecyl (meth)acrylate, undecyl (meth)acrylate, dodecyl (meth)acrylate, tridecyl (meth)acrylate, tetradecyl (meth)acrylate, pentadecyl (meth)acrylate ) acrylate, hexadecyl (meth)acrylate, heptadecyl (meth)acrylate, octadecyl (meth)acrylate, or monomers having 5 or less carbon atoms, such as pentyl (meth)acrylate, n-butyl (meth)acrylate, isobutyl (meth)acrylate, ) acrylate, ethyl (meth)acrylate, methyl (meth)acrylate, and the like.

In addition, the active hydrogen group-containing monomers include 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 6-hydroxyhexyl (meth)acrylate, etc. Hydroxyl group-containing monomers, carboxyl group-containing monomers such as (meth)acrylic acid, itaconic acid, maleic acid, fumaric acid, crotonic acid, isocrotonic acid, acid anhydride group-containing monomers such as maleic anhydride, itaconic anhydride, etc. (meth)acrylamide, N,N-dimethyl (meth)acrylamide, N-butyl (meth)acrylamide, N-methylol (meth)acrylamide, N-methylolpropane (meth)acrylamide, N-methoxymethyl (meth)acrylamide Amide monomers such as acrylamide and N-butoxymethyl (meth)acrylamide; Amino monomers such as aminoethyl (meth)acrylate, N,N-dimethylaminoethyl (meth)acrylate, and (meth)t-butylaminoethyl (meth)acrylate Examples include group-containing monomers. These active hydrogen group-containing monomer components may be used alone or in combination of two or more. Further, examples of the glycidyl group-containing monomer include glycidyl (meth)acrylate and the like.

The content of the heat-reactive functional group is not particularly limited, but is preferably in the range of 0.5% by mass or more and 50% by mass or less based on the total amount of the comonomer components.

Specific examples of acrylic copolymers having suitable functional groups copolymerized with the above monomers include binary copolymers of "2-ethylhexyl acrylate and acrylic acid" and "2-ethylhexyl acrylate". and 2-hydroxyethyl acrylate, terpolymer of 2-ethylhexyl acrylate, methacrylic acid and 2-hydroxyethyl acrylate, and di-copolymer of n-butyl acrylate and acrylic acid. Original copolymer, binary copolymer of "n-butyl acrylate and 2-hydroxyethyl acrylate", ternary copolymer of "n-butyl acrylate, methacrylic acid and 2-hydroxyethyl acrylate", "2-hydroxyethyl acrylate" - terpolymer of ``ethylhexyl acrylate, methyl methacrylate, and 2-hydroxyethyl acrylate,'' a quaternary copolymer of ``2-ethylhexyl acrylate, n-butyl acrylate, 2-hydroxyethyl acrylate, and methacrylic acid,'' Examples include, but are not limited to, quaternary copolymers of 2-ethylhexyl acrylate, methyl methacrylate, 2-hydroxyethyl acrylate, and methacrylic acid.

The above-mentioned acrylic copolymer having a functional group may contain other comonomer components as necessary for the purpose of cohesive force, heat resistance, and the like. Specifically, such other comonomer components include, for example, cyano group-containing monomers such as (meth)acrylonitrile, and olefin monomers such as ethylene, propylene, isoprene, butadiene, and isobutylene. , styrene monomers such as styrene, α-methylstyrene, and vinyltoluene, vinyl ester monomers such as vinyl acetate and vinyl propionate, vinyl ether monomers such as methyl vinyl ether and ethyl vinyl ether, vinyl chloride, and chloride. Halogen atom-containing monomers such as vinylidene, alkoxy group-containing monomers such as methoxyethyl (meth)acrylate, ethoxyethyl (meth)acrylate, N-vinyl-2-pyrrolidone, N-methylvinylpyrrolidone, N- Vinylpyridine, N-vinylpiperidone, N-vinylpyrimidine, N-vinylpiperazine, N-vinylpyrazine, N-vinylpyrrole, N-vinylimidazole, N-vinyloxazole, N-vinylmorpholine, N-vinylcaprolactam, N-( Examples include monomers having a nitrogen atom-containing ring such as meth)acryloylmorpholine. These other comonomer components may be used alone or in combination of two or more. The copolymer having the above-mentioned functional group is not particularly limited, but includes the initial adhesion of the adhesive layer 2 to the die-bonding film 3, the releasability of the adhesive layer 2 from the die-bonding film 3 after irradiation with ultraviolet rays, and the die-bonding film at the time of peeling. From the viewpoint of controlling the balance of contamination with respect to No. 3, the glass transition temperature (Tg) is preferably in the range of -70°C or more and -10°C or less, and more preferably in the range of -65°C or more and -50°C or less. .

The above photosensitive acrylic adhesive polymer having a carbon-carbon double bond and a functional group uses an acrylic copolymer having the above-mentioned functional group, and undergoes an addition reaction with the functional group of the copolymer. It can be obtained by addition reaction of a compound having a functional group and a carbon-carbon double bond (active energy ray-reactive compound) capable of Examples of compounds having such functional groups and carbon-carbon double bonds include 2-methacryloyloxyethyl isocyanate, 4-methacryloyloxyethyl isocyanate, and Isocyanate compounds having a (meth)acryloyloxy group such as -methacryloyloxy-n-butyl isocyanate, 2-acryloyloxyethyl isocyanate, and m-isopropenyl-α,α-dimethylbenzyl isocyanate can be used. In addition, when performing an addition reaction on the carboxyl group in the side chain of the above copolymer, active energy ray-reactive compounds such as glycidyl (meth)acrylate and 2-(1-aziridinyl)ethyl (meth)acrylate are used. It can be used as Furthermore, when performing an addition reaction on the glycidyl group in the side chain of the copolymer, (meth)acrylic acid or the like can be used as an active energy ray-reactive compound.

For the above addition reaction, from the viewpoints of ease of tracing the reaction (stability of control) and technical difficulty, the isocyanate group that can undergo an addition reaction with the hydroxyl group that the acrylic copolymer has in the side chain is selected. The most suitable method is to conduct an addition reaction with a compound having a carbon-carbon double bond (an isocyanate compound having a (meth)acryloyloxy group).

In addition, when performing the above addition reaction, the active energy ray-curable acrylic adhesive polymer is crosslinked with a crosslinking agent such as a polyisocyanate crosslinking agent or an epoxy crosslinking agent, which will be described later, to further increase the molecular weight. It is preferable that a functional group such as a hydroxyl group, a carboxyl group, or a glycidyl group remain in the structure. For example, when an acrylic copolymer having a hydroxyl group in the side chain is reacted with an isocyanate compound having a (meth)acryloyloxy group, the hydroxyl group (-OH) in the side chain of the copolymer ( The compounding ratio of the isocyanate groups (-NCO) of the isocyanate compound having a meth)acryloyloxy group may be adjusted so that the equivalent ratio [(NCO)/(OH)] of the two is less than 1.0. In this way, an acrylic adhesive polymer having a carbon-carbon double bond and a functional group such as a (meth)acryloyloxy group, that is, an active energy ray-curable acrylic adhesive polymer can be obtained.

In the above addition reaction, it is preferable to use a polymerization inhibitor so that the active energy ray reactivity of the carbon-carbon double bond is maintained. As such a polymerization inhibitor, a quinone-based polymerization inhibitor such as hydroquinone monomethyl ether is preferable. The amount of the polymerization inhibitor is not particularly limited, but is usually in the range of 0.01 part by mass or more and 0.1 part by mass or less based on the total amount of the copolymer having a functional group and the active energy ray-reactive compound. It is preferable that there be.

The photosensitive acrylic adhesive polymer having a carbon-carbon double bond and a functional group is not particularly limited, but preferably has a hydroxyl value in the range of 12.0 mgKOH/g to 55.0 mgKOH/g. . When the hydroxyl value is within the above range, even when the thickness of the adhesive layer 2 is reduced, the effect of reducing the adhesive strength of the adhesive layer 2 due to ultraviolet irradiation is not hindered, and the die bond film 3 of the adhesive layer 2 It is possible to ensure initial adhesion to. Further, since an appropriate crosslinked structure can be formed by adding a crosslinking agent, the cohesive force of the adhesive layer 2 can be improved. The above hydroxyl group is more preferably in a range of 17.0 mgKOH/g or more and 39.0 mgKOH/g or less.

Further, the photosensitive acrylic adhesive polymer having a carbon-carbon double bond and a functional group is not particularly limited, but the acid value must be in the range of 2.0 mgKOH/g or more and 9.0 mgKOH/g or less. is preferred. When the acid value is within the above range, even when the thickness of the adhesive layer 2 is reduced, the adhesive strength of the adhesive layer 2 can be reduced without hindering the effect of reducing the adhesive force of the adhesive layer 2 due to irradiation with active energy rays such as ultraviolet rays. Initial adhesion to the die-bonding film 3 of No. 2 can be ensured. The acid value is more preferably in the range of 2.5 mgKOH/g or more and 8.2 mgKOH/g or less.

Furthermore, the carbon-carbon double bond content of the acrylic adhesive polymer having photosensitive carbon-carbon double bonds and functional groups is such that the adhesive layer 2 has sufficient adhesiveness after irradiation with active energy rays such as ultraviolet rays. The amount may be sufficient as long as the effect of reducing force can be obtained, and although it is not unambiguous depending on usage conditions such as the irradiation amount of active energy rays, it is, for example, in the range of 0.85 meq/g or more and 1.60 meq/g or less. It is preferable. When the carbon-carbon double bond content is less than 0.85 meq/g, the adhesive force reduction effect in the adhesive layer 2 after irradiation with active energy rays becomes small, and the pickup failure of the semiconductor chip with the adhesive layer 3 increases. There is a risk of On the other hand, if the carbon-carbon double bond content exceeds 1.60 meq/g, depending on the copolymer composition of the acrylic adhesive polymer, gelation may occur during polymerization or reaction during synthesis, making synthesis difficult. There are cases. In addition, when confirming the carbon-carbon double bond content of the active energy ray-curable acrylic adhesive polymer, the carbon-carbon double bond content can be determined by measuring the iodine value of the active energy ray-curable acrylic adhesive polymer. Bond content can be calculated.

Furthermore, the photosensitive acrylic adhesive polymer having a carbon-carbon double bond and a functional group preferably has a weight average molecular weight (Mw) in the range of 200,000 to 2,000,000, although it is not particularly limited. . When the weight average molecular weight (Mw) of the active energy ray-curable acrylic adhesive polymer is less than 200,000, high viscosity active energy of several thousand cP or more and tens of thousands of cP or less is used, taking into consideration coating properties, etc. This is not preferred because it is difficult to obtain a solution of the linearly curable resin composition. In addition, the cohesive force of the adhesive layer 2 before irradiation with active energy rays becomes small, so that, for example, when the semiconductor chip with die bond film 3 is detached from the adhesive layer 2 after irradiation with active energy rays, the die bond film 3 may be contaminated. There is a risk. On the other hand, if the weight average molecular weight (Mw) exceeds 2 million, there is no particular problem in terms of properties as an adhesive, but acrylic adhesive polymers with photosensitive carbon-carbon double bonds and functional groups It is difficult to mass-produce it, and for example, an acrylic adhesive polymer having a photosensitive carbon-carbon double bond and a functional group may gel during synthesis, which is undesirable. The weight average molecular weight (Mw) is more preferably 300,000 or more and 1,500,000 or less. Here, the weight average molecular weight (Mw) means a standard polystyrene equivalent value measured by gel permeation chromatography (GPC).

Furthermore, the photosensitive acrylic adhesive polymer having a carbon-carbon double bond and a functional group is not particularly limited, but preferably has a molecular weight distribution (Mw/Mn ). From the viewpoint of improving the cohesive force of the adhesive layer 2, the upper limit thereof is more preferably 10.0 or less, and even more preferably 2.5 or less. Molecular weight distribution (Mw/Mn) is the ratio of weight average molecular weight (Mw) to number average molecular weight (Mn). Weight average molecular weight (Mw) and number average molecular weight (Mn) mean standard polystyrene equivalent values measured by gel permeation chromatography (GPC).

When the molecular weight distribution (Mw/Mn) of the photosensitive acrylic adhesive polymer having a carbon-carbon double bond and a functional group is within the above range, the entire active energy ray-curable acrylic adhesive polymer Among them, the proportion of low molecular weight components that are difficult to contribute to crosslinking, that is, low molecular weight components that have no or almost no heat-reactive functional groups or photosensitive carbon-carbon double bonds, is small. . Therefore, even when the thickness of the adhesive layer 2 is reduced in order to reduce the thermal resistance of the adhesive layer 2, the cohesive force can be made sufficient by adding the crosslinking agent described later, and the die bond film It becomes easy to ensure initial adhesion to No. 3. Furthermore, the adhesive force of the adhesive layer 2 after irradiation with active energy rays can be appropriately reduced, and contamination of the die bond film 3 when detaching the semiconductor chip with the die bond film 3 from the adhesive layer 2 can be easily suppressed. Become.

The acrylic adhesive polymer having a functional group (acrylic copolymer having a functional group) that becomes the base polymer of the active energy ray-curable acrylic adhesive polymer can be obtained by subjecting a mixture of the above-mentioned monomers to polymerization. However, the polymerization can be carried out by any method such as solution polymerization, emulsion polymerization, bulk polymerization, or suspension polymerization. Preferred reaction modes for the polymerization include free radical polymerization and living radical polymerization, but from the viewpoint of narrowing the molecular weight distribution (Mw/Mn) as much as possible, living radical polymerization that does not involve a polymerization termination reaction or transfer reaction is preferable. More preferably, the polymerization is carried out by radical polymerization. Among these, solution polymerization using living radical polymerization as a reaction mode is particularly suitable. The adhesive layer 2 is made of an adhesive composition containing an active energy ray-curable acrylic adhesive polymer whose base polymer is an acrylic copolymer having a functional group polymerized by free radical polymerization, which is at least a polymerization initiator. It contains an organic peroxide and/or an azo compound. Furthermore, the adhesive layer 2 is made of an adhesive composition containing an active energy ray-curable acrylic adhesive polymer whose base polymer is an acrylic copolymer having a functional group polymerized by living radical polymerization. It contains a halide which is a catalyst and/or a transition metal complex which is a catalyst. As the organic peroxide, azo compound, halide, and transition metal complex, known or commonly used ones can be used.

[Photopolymerization initiator]
As described above, the active energy ray-curable acrylic adhesive composition (adhesive composition (A1)) contains a photopolymerization initiator that generates radicals upon irradiation with active energy rays. The photopolymerization initiator senses the irradiation of active energy rays to the adhesive layer during detachment of the adherend, generates radicals, and removes the carbon contained in the active energy ray-curable acrylic adhesive polymer in the adhesive layer 2. - Initiate the crosslinking reaction of carbon double bonds. As a result, the adhesive layer further hardens and contracts under irradiation with active energy rays, thereby reducing its adhesive force to the adherend. The photopolymerization initiator is preferably a compound that generates radically active species by ultraviolet rays or the like, such as an alkylphenone radical polymerization initiator, an acylphosphine oxide radical polymerization initiator, an oxime ester radical polymerization initiator, etc. It will be done. These photopolymerization initiators may be used alone or in combination of two or more.

Examples of the alkylphenone radical polymerization initiators include benzyl methyl ketal radical polymerization initiators, α-hydroxyalkylphenone radical polymerization initiators, α-aminoalkylphenone radical polymerization initiators, and the like.

Specifically, the benzyl methyl ketal radical polymerization initiator is, for example, 2,2'-dimethoxy-1,2-diphenylethan-1-one (for example, trade name: Omnirad 651, IGM Resins B.V. company), etc. Specifically, the α-hydroxyalkylphenone radical polymerization initiator is, for example, 2-hydroxy-2-methyl-1-phenylpropan-1-one (trade name: Omnirad 1173, manufactured by IGM Resins B.V. ), 1-hydroxycyclohexyl phenylketone (trade name: Omnirad184, manufactured by IGM Resins B.V.), 1-[4-(2-hydroxyethoxy)phenyl]-2-hydroxy-2-methyl-1-propane -1-one (trade name: Omnirad2959, manufactured by IGM Resins B.V.), 2-hydroxy-1-{4-[4-(2-hydroxy-2-methylpropionyl)benzyl]phenyl}-2-methyl Examples include propan-1-one (trade name Omnirad 127, manufactured by IGM Resins B.V.). Specifically, the α-aminoalkylphenone radical polymerization initiator is, for example, 2-methyl-1-(4-methylthiophenyl)-2-morpholinopropan-1-one (trade name: Omnirad 907, IGM Resins B.V.), 2-benzyl-2-(dimethylamino)-4'-morpholinobutyrophenone (trade name: Omnirad369, manufactured by IGM Resins B.V.), 2-dimethylamino-2-( Examples include 4-methylbenzyl)-1-(4-morpholin-4-yl-phenyl)-butan-1-one (trade name: Omnirad 379EG, manufactured by IGM Resins B.V.).

Specific examples of the acylphosphine oxide radical polymerization initiator include 2,4,6-trimethylbenzoyl-diphenylphosphine oxide (trade name: OmniradTPO, manufactured by IGM Resins B.V.), Examples include (2,4,6-trimethylbenzoyl)-phenylphosphine oxide (trade name: Omnirad 819, manufactured by IGM Resins B.V.).

As the oxime ester radical polymerization initiator, 1,2-octanedione, 1-[4-(phenylthio)phenyl]-,2-(O-benzoyloxime) (trade name: OmniradOXE-01, IGM Resins B. (manufactured by V. Co.), etc.

The amount of the photopolymerization initiator added is preferably in the range of 0.1 parts by mass or more and 10.0 parts by mass or less, based on 100 parts by mass of the solid content of the active energy ray-curable acrylic adhesive polymer. preferable. If the amount of photopolymerization initiator added is less than 0.1 parts by mass, the photoreactivity to active energy rays is insufficient, so even if irradiated with active energy rays, the photoradical crosslinking reaction of the acrylic adhesive polymer will not occur. does not occur sufficiently, resulting in insufficient curing and shrinkage of the adhesive, and as a result, the adhesive force reduction effect in the adhesive layer 2 after irradiation with active energy rays is reduced, and there is a risk that pick-up failures of semiconductor chips may increase. . On the other hand, if the amount of the photopolymerization initiator added exceeds 10.0 parts by mass, the effect is saturated, which is also unfavorable from the economic point of view. Furthermore, depending on the type of photopolymerization initiator, the adhesive layer 2 may turn yellow and have a poor appearance.

Further, as a sensitizer for such a photopolymerization initiator, compounds such as dimethylaminoethyl methacrylate and isoamyl 4-dimethylaminobenzoate may be added to the adhesive.

[Crosslinking agent]
As described above, the active energy ray-curable acrylic adhesive composition (adhesive composition (A1)) further contains a crosslinking agent to increase the molecular weight of the active energy ray-curable acrylic adhesive polymer. do. Such a crosslinking agent is not particularly limited, and may be a known crosslinking agent having a functional group that can react with a hydroxyl group, a carboxyl group, a glycidyl group, etc., which are the functional groups of the active energy ray-curable acrylic adhesive polymer. agents can be used. Specifically, for example, polyisocyanate crosslinking agents, epoxy crosslinking agents, aziridine crosslinking agents, melamine resin crosslinking agents, urea resin crosslinking agents, acid anhydride crosslinking agents, polyamine crosslinking agents, and carboxyl group-containing crosslinking agents. Examples include polymer crosslinking agents. Among these, it is preferable to use a polyisocyanate crosslinking agent or an epoxy crosslinking agent from the viewpoint of reactivity and versatility. These crosslinking agents may be used alone or in combination of two or more. The amount of the crosslinking agent is preferably in the range of 0.01 parts by mass or more and 10 parts by mass or less, based on 100 parts by mass of the solid content of the active energy ray-curable acrylic adhesive polymer. More preferably, it is in the range of 0.1 parts by mass or more and 5 parts by mass or less, and still more preferably in the range of 0.5 parts by mass or more and 4 parts by mass or less.

Examples of the polyisocyanate crosslinking agent include a polyisocyanate compound having an isocyanurate ring, an adduct polyisocyanate compound obtained by reacting trimethylolpropane with hexamethylene diisocyanate, and an adduct obtained by reacting trimethylolpropane with tolylene diisocyanate. Examples include polyisocyanate compounds, adduct polyisocyanate compounds obtained by reacting trimethylolpropane and xylylene diisocyanate, and adduct polyisocyanate compounds obtained by reacting trimethylolpropane and isophorone diisocyanate. These can be used alone or in combination of two or more.

Examples of the epoxy crosslinking agent include bisphenol A/epichlorohydrin type epoxy resin, ethylene glycol diglycidyl ether, polyethylene glycol diglycidyl ether, glycerin diglycidyl ether, glycerin triglycidyl ether, and 1,6-hexanediol diglycidyl ether. , trimethylolpropane triglycidyl ether, sorbitol polyglycidyl ether, polyglycerol polyglycidyl ether, pentaerythritol polyglycidyl erythritol, diglycerol polyglycidyl ether, 1,3'-bis(N,N-diglycidylaminomethyl)cyclohexane, N , N,N',N'-tetraglycidyl-m-xylene diamine and the like. These can be used alone or in combination of two or more.

After forming the adhesive layer 2 with the active energy ray curable resin composition (adhesive composition (A1)), the crosslinking agent and the functional group possessed by the active energy ray curable acrylic adhesive polymer are reacted. The aging conditions for this purpose are not particularly limited, but, for example, the temperature may be appropriately set in the range of 23° C. or more and 80° C. or less, and the time may be appropriately set in the range of 24 hours or more and 168 hours or less.

[others]
The active energy ray-curable acrylic adhesive composition (adhesive composition (A1)) may contain, if necessary, a polyfunctional acrylic monomer, a polyfunctional acrylic oligomer, etc., as long as the effects of the present invention are not impaired. , tackifiers, fillers, anti-aging agents, colorants, flame retardants, antistatic agents, surfactants, silane coupling agents, leveling agents, and other additives may be added.

(Adhesive composition (A2))
The adhesive composition (A2) is an adhesive composition that further contains a thermally conductive filler in addition to the above-mentioned adhesive composition (A1). When the adhesive layer 2 made of the adhesive composition (A2) has the same thickness as the adhesive layer 2 made of the adhesive composition (A1) that does not contain a thermally conductive filler, Since the thermal conductivity increases, the thermal resistance decreases.

[Thermal conductive filler]
In the adhesive composition (A2), the material of the thermally conductive filler is not particularly limited, but examples thereof include boron nitride, aluminum nitride, aluminum oxide, aluminum hydroxide, boehmite, magnesium oxide, aluminum, copper, diamond, etc. Can be mentioned. Among these, boron nitride, aluminum oxide, aluminum hydroxide, and magnesium oxide are preferred from the viewpoint of versatility.

The average particle diameter of the thermally conductive filler is not particularly limited, but is preferably in the range of 0.1 μm or more and 10 μm or less. When the average particle diameter of the thermally conductive filler is less than 0.1 μm, the viscosity of the solution of the adhesive composition increases, and it may be difficult to apply a uniform thin film to the base film 1 of the adhesive layer 2. be. Moreover, especially when the content of the thermally conductive filler is large, the adhesive force of the adhesive layer 2 may be reduced. On the other hand, when the average particle size of the thermally conductive filler exceeds 10 μm, if the thickness of the adhesive layer 2 is small, the surface undulations of the adhesive layer 2 may become large, and the adhesive force of the adhesive layer 2 may decrease. There is. When the adhesive force of the adhesive layer 2 decreases, the initial adhesion to the die bond film 3 and the fixing force to the ring frame decrease, which may cause problems in the bonding process and the expanding process. The average particle diameter of the thermally conductive filler is more preferably in the range of 0.2 μm or more and 3 μm or less. In the present invention, the average particle diameter of the thermally conductive filler is determined by observing the particles of the thermally conductive filler using a scanning electron microscope (SEM) or a transmission electron microscope (TEM), and determining the long axis diameter of 100 particles. shall be measured and the arithmetic mean value shall be obtained.

The content of the thermally conductive filler is not particularly limited as long as it does not impede the effects of the present invention, but for example, it is in the range of 5% to 20% by volume with respect to the total volume of the adhesive composition. It is preferable. If the content of the thermally conductive filler is less than 5% by volume, sufficient thermal conductivity may not be obtained. On the other hand, if the content of the thermally conductive filler exceeds 20% by volume, the adhesive force of the adhesive layer 2 may decrease, and the initial adhesion to the die-bonding film 3 may decrease. Furthermore, when active energy rays such as ultraviolet rays are irradiated, the transmission of the active energy rays is partially blocked, and the adhesive force of the adhesive layer 2 may not be sufficiently reduced. Note that the above volume ratio can be calculated using the specific gravity of each material.

[Dispersant]
When the thermally conductive filler is mixed with the active energy ray-curable acrylic adhesive polymer, the viscosity may increase. This is considered to be due to the interaction between the thermally conductive filler and the active energy ray-curable acrylic adhesive polymer. Therefore, a dispersant may be added to the pressure-sensitive adhesive composition (A2) in order to suppress the thickening phenomenon. The dispersant is preferably a polymeric dispersant that has good affinity with the active energy ray-curable acrylic adhesive polymer. Examples of the above polymeric dispersants include acrylic, vinyl, polyester, polyurethane, polyether, epoxy, polystyrene, and amino polymer compounds. The above-mentioned dispersants can be used alone or in combination of two or more.

The dispersant preferably has a functional group in order to enhance the dispersion function. Examples of the above functional groups include carboxyl groups, phosphoric acid groups, sulfonic acid groups, carboxylic ester groups, phosphoric ester groups, sulfonic ester groups, hydroxyl groups, amino groups, quaternary ammonium bases, amide groups, etc. More preferably, the dispersant is an amphoteric dispersant having both an acidic functional group and a basic functional group.

The acidity of the dispersant is determined based on its acid value, and the basicity of the dispersant is determined based on its amine value. For example, by using a dispersant having an acid value of 20 mgKOH/g or more, thickening of the adhesive composition (A2) can be prevented. Further, by using a dispersant having an amine value of 5 mgKOH/g or more, changes in adhesive strength during storage of the adhesive can be prevented. The acidic functional group of the dispersant covers the basic active sites of the thermally conductive filler and suppresses the interaction between the thermally conductive filler and the active energy ray-curable acrylic adhesive polymer. It is thought that this prevents the thickening phenomenon of the agent composition (A2). In addition, the basic functional groups in the dispersant interact with the acidic functional groups in the active energy ray-curable acrylic adhesive polymer, thereby inhibiting the dispersant from migrating to the interface of the adhesive composition. This is thought to prevent changes in adhesive strength during storage of the adhesive.

The content of the dispersant is preferably in the range of 0.1 parts by mass or more and 15 parts by mass or less, and preferably in the range of 0.3 parts by mass or more and 10 parts by mass, based on 100 parts by mass of the thermally conductive filler. More preferred. If the content of the dispersant is less than 0.1 parts by mass, sufficient dispersibility cannot be obtained, and if the content of the dispersant exceeds 15 parts by mass, the adhesive strength at high temperatures tends to decrease. , there is a concern that the initial adhesion to the die-bonding film 3 will be affected.

(Adhesive composition (B1))
The adhesive composition (B1) is an adhesive composition comprising an acrylic adhesive polymer having a functional group, an active energy ray-curable compound, a photopolymerization initiator, and a crosslinking agent that reacts with the functional group. . In the above adhesive composition (B1), the acrylic adhesive polymer having a functional group is the same as the acrylic copolymer having a functional group in the explanation of the above adhesive composition (A1). can be used. Further, as for the photopolymerization initiator and the crosslinking agent, the same ones as those exemplified in the explanation of the adhesive composition (A1) above can be used, and the usage conditions such as content can also be the same. .

[Active energy ray-curable compound]
The active energy ray-curable compound of the pressure-sensitive adhesive composition (B1) is, for example, a low molecular weight compound having at least two carbon-carbon double bonds in its molecule, which can be formed into a three-dimensional network by irradiation with active energy rays. is widely used. Specific examples of such low molecular weight compounds include trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, tetraethylene glycol di(meth)acrylate, and 1,6-hexanediol di(meth)acrylate. (meth)acrylate, neopentyl glycol di(meth)acrylate, esterified product of (meth)acrylic acid and polyhydric alcohol such as dipentaerythritol hexa(meth)acrylate; 2-propenyl-di-3-butenyl cyanurate; Examples include isocyanurates or isocyanurate compounds such as 2-hydroxyethylbis(2-acryloxyethyl)isocyanurate and tris(2-methacryloxyethyl)isocyanurate.These active energy ray-curable low molecular weight compounds include: They may be used alone or in combination of two or more.

Furthermore, as the active energy ray curable compound, in addition to the above-mentioned low molecular weight compounds, active energy ray curable oligomers such as epoxy acrylate oligomers, urethane acrylate oligomers, and polyester acrylate oligomers can also be used. Epoxy acrylate is synthesized by an addition reaction between an epoxy compound and (meth)acrylic acid. Urethane acrylate is synthesized, for example, by reacting the isocyanate group remaining at the end of an addition reaction product of a polyol and a polyisocyanate with a hydroxy group-containing (meth)acrylate to introduce a (meth)acrylic group to the molecule end. Polyester acrylate is synthesized by reaction of polyester polyol and (meth)acrylic acid. The active energy ray-curable oligomer preferably has three or more carbon-carbon double bonds in the molecule, from the viewpoint of reducing the adhesive force of the adhesive layer 2 after irradiation with active energy rays. These active energy ray-curable oligomers may be used alone or in combination of two or more.

The weight average molecular weight Mw of the active energy ray-curable oligomer is not particularly limited, but is preferably in the range of 100 or more and 30,000 or less. From both the viewpoints of the effect of reducing adhesive strength, it is more preferable that it is in the range of 500 or more and 6,000 or less.

The content of the active energy ray-curable compound is 5 parts by mass or more and 500 parts by mass or less, preferably 50 parts by mass or more and 180 parts by mass or less, based on 100 parts by mass of the acrylic adhesive polymer having a functional group. It is preferable that there be. When the content of the active energy ray-curable compound is within the above range, the adhesive force of the adhesive layer 2 can be appropriately reduced after irradiation with active energy rays, and the pickup can be performed without damaging the semiconductor chip with the die-bonding film 3. It can be done easily.

(Adhesive composition (B2))
The adhesive composition (B2) is an adhesive composition that further contains a thermally conductive filler in addition to the above-mentioned adhesive composition (B1). The adhesive layer 2 made of the adhesive composition (B2) is made of an adhesive composition (B2) that does not contain a thermally conductive filler.
Compared to the adhesive layer 2 made of B1), when the adhesive layer 2 has the same thickness, its thermal conductivity is higher and the thermal resistance is lower. In the above adhesive composition (B1), the same thermally conductive fillers as those exemplified in the explanation of the above adhesive composition (A2) can be used, and the usage conditions such as content are also the same. It can be done. Moreover, the same dispersant as exemplified in the explanation of the above-mentioned pressure-sensitive adhesive composition (A2) can be used, and the usage conditions such as content can also be the same.

The thickness of the adhesive layer 2 of the dicing tape 10 of the present embodiment is not particularly limited, and the thickness of the adhesive layer 2 is such that the thermal resistance of the adhesive layer 2 is 0.45 K·cm ² /W or less. Although it may be adjusted as appropriate depending on the value of thermal conductivity, it is preferably in the range of 4 μm or more and 15 μm or less, for example. More specifically, when the adhesive composition constituting the adhesive layer 2 does not contain a thermally conductive filler, the thickness is preferably in the range of 4 μm or more and 9 μm or less, and the adhesive composition constituting the adhesive layer 2 When the agent composition contains a thermally conductive filler, it is preferably in the range of 9 μm or more and 15 μm or less, for example. In each case, if the thickness of the adhesive layer 2 is less than the preferable lower limit, the adhesive force will decrease, and there is a possibility that the initial adhesion to the die bond film 3 and the fixing force to the ring frame will be insufficient. On the other hand, if the thickness of the adhesive layer 2 exceeds the preferable upper limit, the thermal resistance will increase, and in the heat shrink process, for example, when the rotation speed of the hot air blowing nozzle is set faster than before, that is, the takt time will be reduced. When trying to shorten the dicing tape 10, the slackened dicing tape 10 will not be sufficiently heat-shrinked, so the slack will not be fully eliminated, and as a result, the kerf width may not be maintained sufficiently.

(Anchor coat layer)
In the dicing tape 10 according to the present embodiment, the base film 1 and the adhesive layer 2 are adjusted according to the manufacturing conditions of the dicing tape 10, the usage conditions of the dicing tape 10 after manufacturing, etc., within a range that does not impair the effects of the present invention. An anchor coat layer matching the composition of the base film 1 may be provided between the base film 1 and the base film 1. Providing the anchor coat layer improves the adhesion between the base film 1 and the adhesive layer 2.

(Release liner)
Further, a release liner may be provided on the opposite surface side (one surface side) of the adhesive layer 2 from the base film 1, if necessary. There are no particular restrictions on what can be used as the release liner, but examples include synthetic resins such as polyethylene, polypropylene, and polyethylene terephthalate, and papers. Further, the surface of the release liner may be subjected to a release treatment using a silicone-based release agent, a long-chain alkyl-based release agent, a fluorine-based release agent, or the like in order to improve the releasability of the adhesive layer 2. The thickness of the release liner is not particularly limited, but one in the range of 10 μm to 200 μm can be suitably used.

(Method for manufacturing dicing tape)
FIG. 4 is a flowchart illustrating a method for manufacturing the dicing tape 10. First, a release liner is prepared (step S101: release liner preparation step). Next, a coating solution for the adhesive layer 2 (adhesive layer forming coating solution), which is a material for forming the adhesive layer 2, is prepared (step S102: coating solution preparation step). The coating solution can be prepared, for example, by uniformly mixing and stirring the active energy ray-curable acrylic adhesive polymer, the photopolymerization initiator, the crosslinking agent, and the diluent solvent, which are the constituent components of the adhesive layer 2. . As the solvent, for example, general-purpose organic solvents such as toluene and ethyl acetate can be used.

Then, using the coating solution for the adhesive layer 2 prepared in step S102, the coating solution is applied onto the release-treated surface of the release liner and dried to form the adhesive layer 2 with a predetermined thickness (step S103: Adhesive layer forming step). The coating method is not particularly limited, and can be coated using, for example, a die coater, a comma coater (registered trademark), a gravure coater, a roll coater, a reverse coater, or the like. Further, the drying conditions are not particularly limited, but for example, it is preferable that the drying temperature be within the range of 80° C. to 150° C., and the drying time be within the range of 0.5 minutes to 5 minutes. Subsequently, the base film 1 is prepared (step S104: base film preparation step). Then, the base film 1 is pasted onto the adhesive layer 2 formed on the release liner (step S105: base film pasting step). Finally, the formed adhesive layer 2 is aged for 72 hours in an environment of 40° C. to cause the active energy ray-curable acrylic adhesive polymer to react with the crosslinking agent, thereby crosslinking and curing it (Step S106: Heat curing process). Through the above steps, it is possible to manufacture a dicing tape 10 having the adhesive layer 2 and the release liner on the base film 1 in this order from the base film side. Note that, in the present invention, a laminate including a release liner on the adhesive layer 2 may also be referred to as the dicing tape 10.

In addition, as a method for forming the adhesive layer 2 on the base film 1, a coating solution for the adhesive layer 2 is applied onto the release liner and dried, and then the base material is coated on the adhesive layer 2. Although the method of bonding the film 1 is illustrated, a method of directly applying a coating solution for the adhesive layer 2 onto the base film 1 and drying it may also be used. From the viewpoint of stable production, the former method is preferably used.

The dicing tape 10 of the present embodiment may be wound into a roll or may be a stack of wide sheets. Further, the dicing tape 10 of these forms may be cut into a predetermined size to form a sheet or tape.

<Dicing die bond film>
According to the second aspect of the present invention, the dicing tape 10 of the present embodiment has a die-bonding film (adhesive layer) 3 removably attached to the adhesive layer 2 of the dicing tape 10 in the semiconductor manufacturing process. It can also be used in the form of a laminated dicing die bond film 20. The die bond film (adhesive layer) 3 is for adhering and connecting the separated semiconductor chips to a lead frame or a wiring board (supporting board). Furthermore, when semiconductor chips are stacked, it also serves as an adhesive layer between the semiconductor chips.

When stacking semiconductor chips, the first layer of semiconductor chips is bonded to a semiconductor chip mounting wiring board on which terminals are formed using a die bond film (adhesive layer) 3, and then a die bond film is placed on top of the first layer of semiconductor chips. (Adhesive layer) 3 is used to bond the second tier semiconductor chip. The connection terminals of the first-stage semiconductor chip and the second-stage semiconductor chip are electrically connected to external connection terminals via wires, but the wires for the first-stage semiconductor chip are die-bonded during crimping (die bonding). It is embedded in a film (adhesive layer) 3, that is, a wire-embedded die bond film (adhesive layer) 3.

(Die bond film)
The die bond film (adhesive layer) 3 is a layer made of a thermosetting adhesive composition that is cured by heat. The adhesive composition is not particularly limited, and conventionally known materials can be used. A preferred embodiment of the adhesive composition includes, for example, a glycidyl group-containing (meth)acrylic acid ester copolymer as a thermoplastic resin, an epoxy resin as a thermosetting resin, and a phenol resin as a curing agent for the epoxy resin. Examples include thermosetting adhesive compositions in which a curing accelerator, an inorganic filler, a silane coupling agent, etc. are added to a resin composition containing the above. The die-bonding film (adhesive layer) 3 made of such a thermosetting adhesive composition has excellent adhesion between a semiconductor chip and a support substrate, and between a semiconductor chip and a semiconductor chip, and has excellent electrode embedding properties and/or wire embedding properties. It is preferable because it has the following characteristics: it can be bonded at a low temperature in the die bonding process, excellent curing can be obtained in a short time, and it has excellent reliability after being molded with a sealant.

A general-purpose die-bond film used in a form in which the wire is not embedded in the adhesive layer and a wire-embedded die-bond film used in a form in which the wire is embedded in the adhesive layer are The types are often almost the same, but by changing the blending ratio of the materials used and the physical properties/characteristics of individual materials depending on the purpose, it can be used for general purpose die bonding film or for wire-embedded die bonding. Customized for film. Furthermore, if there is no problem with the reliability of the final semiconductor device, a wire-embedded die bond film may be used as a general-purpose die bond film. That is, the wire-embedded die-bonding film is not limited to wire-embedding applications, but can also be used for bonding semiconductor chips to substrates with unevenness caused by wiring, metal substrates such as lead frames, and the like.

(Adhesive composition for general purpose die bond film)
First, an example of an adhesive composition for a general-purpose die-bonding film will be described, but the invention is not particularly limited to this example. As an indicator of the fluidity during die bonding of the die bond film 3 formed from the adhesive composition, for example, the shear viscosity at 80°C can be mentioned, but in the case of a general-purpose die bond film, the shear viscosity at 80°C is generally used. indicates a value in the range of 20,000 Pa·s or more and 40,000 Pa·s or less, preferably 25,000 Pa·s or more and 35,000 Pa·s or less. A preferred embodiment of the adhesive composition for general-purpose die-bonding films includes the sum of the glycidyl group-containing (meth)acrylic acid ester copolymer, the epoxy resin, and the phenol resin, which are resin components of the adhesive composition. When the amount is based on 100 parts by mass, (a) the above glycidyl group-containing (meth)acrylic acid ester copolymer in a range of 52 parts by mass to 90 parts by mass, and the above epoxy resin in a range of 5 parts by mass to 25 parts by mass. (b) a curing accelerator is contained in the epoxy resin and the phenol resin in the following range, in the range of 5 parts by mass or more and 23 parts by mass or less of the phenolic resin, adjusted so that the total amount of the resin component is 100 parts by mass; and (c) an inorganic filler in the range of 0.1 part by mass or more and 0.3 parts by mass or less based on 100 parts by mass of the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer and the epoxy resin. and the above-mentioned phenol resin, in an amount of 5 parts by mass or more and 20 parts by mass or less, based on 100 parts by mass of the total amount of the above-mentioned phenol resin.

Moreover, a silane coupling agent can be added to the adhesive composition for general-purpose die bonding films, if necessary, from the viewpoint of improving adhesive strength to adherends. The amount of the silane coupling agent added is preferably in the range of 1.0 parts by mass or more and 7.0 parts by mass or less, based on a total of 100 parts by mass of the epoxy resin and the phenol resin. The above-mentioned glycidyl group-containing (meth)acrylic acid ester copolymer, epoxy resin, phenol resin, curing accelerator, inorganic filler, silane coupling agent, etc. are known as materials for general-purpose die bond film adhesive compositions. Any conventional one can be used.

(Adhesive composition for wire-embedded die bond film)
Next, an example of an adhesive composition for a wire-embedded die-bonding film will be described, but the invention is not particularly limited to this example. As an index of the fluidity during die bonding of the die bond film 3 formed from the adhesive composition, for example, the shear viscosity at 80°C can be mentioned, but in the case of a wire-embedded die bond film, generally The shear viscosity shows a value in the range of 200 Pa·s or more and 11,000 Pa·s or less, preferably 2,000 Pa·s or more and 7,000 Pa·s or less. A preferred embodiment of the adhesive composition for wire-embedded die-bonding films includes the glycidyl group-containing (meth)acrylic acid ester copolymer, which is a resin component of the adhesive composition, the epoxy resin, and the phenol resin. (a) the glycidyl group-containing (meth)acrylic ester copolymer in a range of 17 parts by mass to 51 parts by mass, and the epoxy resin in a range of 30 parts by mass to 64 parts by mass, based on the total amount of 100 parts by mass. (b) a curing accelerator is contained in the epoxy resin and the above-mentioned phenol resin in a range of 19 parts by mass or more and 53 parts by mass or less, adjusted so that the total amount of the resin component is 100 parts by mass; The above-mentioned glycidyl group-containing (meth)acrylic acid ester copolymer and the above-mentioned glycidyl group-containing (meth)acrylic acid ester copolymer contain an inorganic filler in an amount of 0.01 part by mass or more and 0.07 parts by mass or less based on 100 parts by mass of the total amount with the phenol resin. An example of an adhesive composition may include an amount of 10 parts by mass or more and 80 parts by mass or less based on 100 parts by mass of the total amount of the epoxy resin and the phenol resin.

Moreover, a silane coupling agent can be added to the adhesive composition for general-purpose die bonding films, if necessary, from the viewpoint of improving adhesive strength to adherends. The amount of the silane coupling agent added is 0.5 parts by mass or more and 2.0 parts by mass or less, based on a total of 100 parts by mass of the epoxy resin and the phenol resin, from the viewpoint of suppressing the generation of voids on the adhesive surface. It is preferable that it is in the range of . The above-mentioned glycidyl group-containing (meth)acrylic ester copolymers, epoxy resins, phenolic resins, curing accelerators, inorganic fillers, silane coupling agents, etc. are used as materials for adhesive compositions for wire-embedded die-bonding films. Any known or commonly used material can be used.

(Thickness of die bond film (adhesive layer))
The thickness of the die-bonding film (adhesive layer) 3 is not particularly limited, but it is necessary to ensure adhesive strength, to properly embed wires for connecting semiconductor chips, or to sufficiently fill irregularities such as wiring circuits on the board. , preferably in the range of 5 μm or more and 200 μm or less. If the thickness of the die bond film (adhesive layer) 3 is less than 5 μm, there is a risk that the adhesive force between the semiconductor chip and the lead frame, wiring board, etc. will be insufficient. On the other hand, if the thickness of the die-bonding film (adhesive layer) 3 is greater than 200 μm, it will not be economical, and will tend to be insufficient in responding to miniaturization and thinning of semiconductor devices. In addition, in terms of high adhesiveness and the ability to reduce the thickness of the semiconductor device, the thickness of the film adhesive is more preferably in the range of 10 μm or more and 100 μm or less, particularly preferably in the range of 20 μm or more and 75 μm or less.

(Method for manufacturing die bond film)
The die-bonding film (adhesive layer) 3 is manufactured, for example, as follows. First, prepare the release liner. Note that the same release liner as the release liner disposed on the adhesive layer 2 of the dicing tape 10 can be used. Next, a coating solution for the die bond film (adhesive layer) 3, which is a forming material of the die bond film (adhesive layer) 3, is prepared. The coating solution includes, for example, a glycidyl group-containing (meth)acrylic acid ester copolymer, an epoxy resin, a curing agent for the epoxy resin, an inorganic filler, and a curing accelerator, which are the constituent components of the die-bonding film (adhesive layer) 3 as described above. It can be produced by uniformly mixing and dispersing a thermosetting resin composition containing a silane coupling agent, silane coupling, etc., and a diluting solvent. As the solvent, for example, general-purpose organic solvents such as methyl ethyl ketone and cyclohexanone can be used.

Next, a coating solution for the die bond film (adhesive layer) 3 is applied onto the release-treated surface of the release liner serving as a temporary support, dried, and a predetermined thickness of the die bond film (adhesive layer) is applied. ) form 3. Thereafter, the release-treated surface of another release liner is bonded onto the die-bonding film (adhesive layer) 3. The coating method is not particularly limited, and can be coated using, for example, a die coater, a comma coater (registered trademark), a gravure coater, a roll coater, a reverse coater, or the like. As for the drying conditions, for example, it is preferable that the drying temperature be within the range of 60° C. or more and 200° C. or less, and the drying time be within the range of 1 minute or more and 90 minutes or less. In the present invention, a laminate in which a release liner is provided on both sides or one side of the die-bonding film (adhesive layer) 3 may also be referred to as the die-bonding film (adhesive layer) 3.

(Method for manufacturing dicing die bond film)
The method for manufacturing the dicing die-bonding film 20 is not particularly limited, but it can be manufactured by a conventionally known method. For example, the dicing die bond film 20 is prepared by first preparing the dicing tape 10 and die bond film 3 separately, and then peeling off the release liner of the adhesive layer 2 of the dicing tape 10 and the release liner of the die bond film (adhesive layer) 3. Then, the adhesive layer 2 of the dicing tape 10 and the die-bonding film (adhesive layer) 3 may be bonded together by pressing, for example, with a pressure roll such as a hot roll laminator. The bonding temperature is not particularly limited, and is preferably in the range of 10°C or more and 100°C or less, and the bonding pressure (linear pressure) is, for example, in the range of 0.1 kgf/cm or more and 100 kgf/cm or less. It is preferable that there be. In the present invention, the dicing die bond film 20 may also be referred to as a laminate in which a release liner is provided on the adhesive layer 2 and the die bond film (adhesive layer) 3. In the dicing die bond film 20, the release liner provided on the adhesive layer 2 and the die bond film (adhesive layer) 3 may be peeled off when the dicing die bond film 20 is used for a work.

The dicing die-bonding film 20 may be wound into a roll or may be a stack of wide sheets. Further, the dicing tape 10 of these forms may be cut into a predetermined size to form a sheet or tape.

<Method for manufacturing semiconductor chips>
FIG. 5 illustrates a method for manufacturing a semiconductor chip with a die bond film using a dicing die bond film 20 in which a die bond film (adhesive layer) 3 is laminated on the adhesive layer 2 of the dicing tape 10 of the present embodiment. It is a flowchart. Further, in FIG. 6, a ring frame (wafer ring) 40 is placed on the outer edge of the dicing tape 10 (exposed part of the adhesive layer 2) of the dicing die bond film 20, and individual pieces are placed on the die bond film (adhesive layer) 3 in the center. FIG. 2 is a schematic diagram showing a state in which a semiconductor wafer (a plurality of semiconductor chips) is attached. Furthermore, FIGS. 7(a) to (f) show the grinding process of a semiconductor wafer in which a plurality of modified regions have been formed by laser beam irradiation and the dicing die bond film of a plurality of cut semiconductor wafers (a plurality of semiconductor chips). 20 is a cross-sectional view showing an example of a bonding process to 20. FIG. FIGS. 8(a) to 8(f) show the process from expanding to picking up to obtain individual semiconductor chips with die-bonding films from a plurality of cut thin-film semiconductor wafers bonded and held on the dicing die-bonding film 20. FIG. 2 is a cross-sectional view showing an example of a manufacturing method including a series of steps.

(Method for manufacturing semiconductor chips using dicing die bond film 20)
The method for manufacturing a semiconductor chip using the dicing die-bonding film 20 is not particularly limited, and may be any conventionally known method. Here, a manufacturing method using SDBG (Stealth Dicing Before Griding) will be exemplified and explained. do.

First, as shown in FIG. 7A, a semiconductor wafer W having a plurality of integrated circuits (not shown) mounted on a first surface Wa of a semiconductor wafer W whose main component is silicon, for example, is prepared (FIG. step S201: preparation step). Then, a wafer processing tape (backgrind tape) T having an adhesive surface Ta is bonded to the first surface Wa side of the semiconductor wafer W.

Next, as shown in FIG. 7(b), while the semiconductor wafer W is held on the wafer processing tape T, the laser beam whose convergence point is aligned inside the wafer is directed to the side opposite to the wafer processing tape T. That is, the semiconductor wafer W is irradiated from the second surface Wb side of the semiconductor wafer along the lattice-shaped dicing line X, and a modified region 30b is formed in the semiconductor wafer W due to ablation caused by multiphoton absorption. is formed (step S202 in FIG. 5: modified region forming step). The modified region 30b is a weakened region for cutting and separating the semiconductor wafer W into semiconductor chips by a grinding process. A method of forming the modified region 30b along the planned dicing line by laser beam irradiation on the semiconductor wafer W is described in, for example, Japanese Patent No. 3408805, Japanese Unexamined Patent Publication No. 2002-192370, Japanese Unexamined Patent Publication No. 2003-338567, etc. Reference may be made to the disclosed method.

The dicing line X formed on the semiconductor wafer W may be a rectangular lattice. In that case, the semiconductor chip is diced into rectangular pieces. When the diced semiconductor chip is rectangular, the ratio α/β of the length α of the long side to the length β of the short side is preferably in the range of, for example, 1.2 or more and 20 or less. The lower limit of this ratio α/β is more preferably 1.4. Further, the lengths of the long side and the short side are preferably in the range of 1 mm or more and 30 mm or less, more preferably 3 mm or more and 20 mm or less, and even more preferably 4 mm or more and 12 mm or less.

Next, as shown in FIG. 7(c), with the semiconductor wafer W held on the wafer processing tape T, the semiconductor wafer W is ground from the second surface Wb until it reaches a predetermined thickness. The film is made thinner. Here, the thickness of the semiconductor wafer 30 to be thinned is preferably adjusted to 100 μm, more preferably 10 μm or more and 50 μm or less, from the viewpoint of making the semiconductor device thinner. In the main grinding/thinning process, when the semiconductor wafer 30 is thinned, when the grinding load of the grinding wheel is applied, the semiconductor wafer 30 starts from the modified region 30b formed in FIG. 7(b). A crack grows in the vertical direction, and the semiconductor chips 30a are cut into a plurality of semiconductor chips 30a on the wafer processing tape T along a cutting line 30c corresponding to the planned dicing line X.

Next, as shown in FIGS. 7(d) and 7(e), the plurality of semiconductor chips 30a held on the wafer processing tape T are bonded to the die bond film 3 of the separately prepared dicing die bond film 20 (see FIG. 5, step S204: bonding process). In this step, after peeling off the release liner from the adhesive layer 2 and the die bond film (adhesive layer) 3 of the dicing die bond film 20 cut into a circular shape, the dicing tape 10 of the dicing die bond film 20 is removed as shown in FIG. A ring frame (wafer ring) 40 is attached to the outer edge (exposed part of the adhesive layer 2), and a die bond film (adhesive layer) 3 is laminated on the upper center of the adhesive layer 2 of the dicing tape 10. A plurality of semiconductor chips 30a held by a wafer processing tape T are attached to the wafer processing tape T. Thereafter, as shown in FIG. 7F, the wafer processing tape T is peeled off from the plurality of thin film semiconductor chips 30a. The pasting is performed while being pressed by a pressing means such as a pressure roll. The bonding temperature is not particularly limited, and is preferably in the range of 20°C or more and 130°C or less, and from the viewpoint of reducing warpage of the semiconductor chip 30a, it should be in the range of 40°C or more and 100°C or less. is more preferable. The pasting pressure is not particularly limited, and is preferably in the range of 0.1 MPa or more and 10.0 MPa or less. The dicing tape 10 of the present invention also has a certain level of heat resistance, so even if the dicing tape 10 is applied at a high temperature, there will be no particular problem in its handling.

Subsequently, after the ring frame 40 is pasted on the adhesive layer 2 of the dicing tape 10 in the dicing die bond film 20, as shown in FIG. 8(a), the dicing die bond film 20 with the plurality of semiconductor chips 30a is is fixed to the holder 41 of the expanding device. As shown in FIG. 8(b), the thin film semiconductor wafer 30 (semiconductor chips 30a) cut along the cutting line 30c is cut on the lower surface of the thin film semiconductor wafer 30 (semiconductor chips 30a) so that it can be separated into pieces as a plurality of semiconductor chips 30a with die-bonding films. A die bond film 3 that will be cut along the dicing line X in the next step is attached to the side.

Next, a first expanding process under relatively low temperature conditions (for example, -30°C to 0°C), that is, a cool expanding process, is performed as shown in FIG. 8(c), and the dicing die bond film 20 The die bond film (adhesive layer) 3 is cut into small pieces of the die bond film (adhesive layer) 3a corresponding to the size of the semiconductor chip 30a, and the semiconductor chip 30a with the die bond film 3a is obtained (step S205 in FIG. 5). : cool expansion process). In this step, a hollow cylindrical push-up member (not shown) provided in the expanding device is brought into contact with the dicing tape 10 on the lower side of the dicing die bond film 20 and raised, and the semiconductor wafer 30 (semiconductor The dicing tape 10 of the dicing die-bonding film 20 to which the chips 30a) are bonded is expanded so as to be stretched in two-dimensional directions including the radial direction and the circumferential direction of the semiconductor wafer 30. Internal stress generated by pulling the dicing tape 10 in all directions due to cool expansion is transmitted as external stress to the die bond film 3 attached to the diced semiconductor wafer 30 (semiconductor chips 30a). Due to this external stress, the die bond film 3, which has become brittle at low temperature, is cut into small pieces of the die bond film 3a having the same size as the semiconductor chip 30a, thereby obtaining the semiconductor chip 30a with the die bond film 3a.

The temperature conditions in the cool expansion step are, for example, in the range of -30°C to 0°C, preferably in the range of -20°C to -5°C, more preferably in the range of -15°C to -5°C. It is particularly preferably -15°C. The expansion speed (the speed at which the hollow cylindrical push-up member rises) in the cool expansion step is preferably in the range of 0.1 mm/sec to 1000 mm/sec, more preferably 10 mm/sec to 300 mm/sec. range. Further, the amount of expansion (the height of the hollow cylindrical push-up member) in the cool expansion step is preferably in the range of 3 mm or more and 16 mm or less.

Here, in the dicing tape 10 of the present invention, the tensile strength at 100% stretching at 23°C in the MD direction of the base film 1 is adjusted to an appropriate range of 9 MPa or more and 18 MPa or less. The internal stress generated by pulling the dicing tape 10 in all directions due to cool expansion is transferred as external stress to the die bonding film 3 that is in close contact with the adhesive 2 on the base film 1. As a result, the die-bonding film 3 is cut cleanly and with a high yield along the shape of the individualized semiconductor chips.

After the cool expansion step, the hollow cylindrical push-up member of the expanding device is lowered, and the expanded state of the dicing tape 10 is released.

Next, a second expanding process under conditions of relatively high temperature (for example, 10°C to 30°C), that is, a normal temperature expanding process, is performed as shown in FIG. 8(d), and the die bond film (adhesive The distance (kerf width) between semiconductor chips 30a with layer 3a is increased. In this step, a cylindrical table (not shown) provided in the expanding device is brought into contact with the dicing tape 10 on the lower side of the dicing die-bonding film 20 and raised, and the dicing tape 10 of the dicing die-bonding film 20 is expanded (see FIG. Step S206 of Step 5: room temperature expansion step).

Here, the dicing tape 10 of the present invention has a tensile strength at 100% stretching at 23°C in the MD direction of the base film 1 adjusted to an appropriate range of 9 MPa or more and 18 MPa or less. have sex. Therefore, in the normal temperature expansion process, the interval (kerf width) between individual semiconductor chips with die bond films can be sufficiently widened during expansion.

By ensuring a sufficient distance (kerf width) between the semiconductor chips 30a with the die-bonding film (adhesive layer) 3a through the room-temperature expansion process, the recognition of the semiconductor chips 30a by a CCD camera, etc. is improved, and the adjacent semiconductor chips 30a are easily recognized when picked up. It is possible to prevent the semiconductor chips 30a with the die-bonding film (adhesive layer) 3a from being re-adhered to each other, which occurs when the semiconductor chips 30a come into contact with each other. As a result, the pick-up performance of the semiconductor chip 30a with the die-bonding film (adhesive layer) 3a is improved in the pick-up process described later.

The temperature conditions in the normal temperature expansion step are, for example, 10°C or higher, preferably in the range of 15°C or higher and 30°C or lower. The expansion speed (the speed at which the cylindrical table rises) in the room temperature expansion step is, for example, in the range of 0.1 mm/sec to 50 mm/sec, preferably in the range of 0.3 mm/sec to 30 mm/sec. . Further, the amount of expansion in the room temperature expansion step is, for example, in the range of 3 mm or more and 20 mm or less.

After the dicing tape 10 is expanded at room temperature by raising the table, the table vacuum-chucks the dicing tape 10. Then, the table is lowered together with the workpiece while the suction by the table is maintained, and the expanded state of the dicing tape 10 is released. In order to suppress narrowing of the kerf width of the semiconductor chip 30a with the die bonding film (adhesive layer) 3a on the dicing tape 10 after the expanded state is released, it is necessary to It is preferable to heat shrink the circumferential portion outside the semiconductor chip 30a holding area by blowing hot air to eliminate slack in the dicing tape 10 caused by expansion, thereby maintaining the dicing tape 10 in a tensioned state.

After the heat shrinkage, the vacuum suction state by the table is released. The temperature of the hot air may be adjusted depending on the physical properties of the base film 1, the distance between the hot air outlet and the dicing tape, the air volume, etc., and is preferably in the range of 200° C. or more and 250° C. or less, for example. Further, the distance between the hot air outlet and the dicing tape is preferably in a range of, for example, 15 mm or more and 25 mm or less. Further, the air volume is preferably in a range of, for example, 35 L/min or more and 45 L/min or less. Note that when performing the heat shrink process, the stage of the expanding device is rotated at a rotation speed in a range of, for example, 3°/second to 10°/second, and the circumference of the dicing tape 10 outside the semiconductor chip 30a holding area is rotated. Blow hot air along the section. By such hot air blowing, the temperature of the surface of the dicing tape 10 is preferably adjusted to a range of, for example, 60° C. or higher and 100° C. or lower. More preferably, the temperature is in the range of 70°C or higher and 90°C or lower.

Here, the dicing tape 10 of the present invention has a tensile strength at 100% stretching at 23° C. in the MD direction of the base film 1 in the range of 9 MPa or more and 18 MPa or less, while the tensile strength at 100% stretching at 23° C. Since the stress relaxation rate after holding for seconds is 50% or more, the stress generated in the base film 1 when the dicing tape 10 is expanded at room temperature is quickly reduced to a sufficiently low value, and the stress relaxation rate is within the above-mentioned appropriate range. Due to the tensile strength of the dicing tape, the expanded state can be maintained in the area where only the dicing tape (the area where no semiconductor chips with die bond films are present) corresponds to the interval (kerf width) between the individual semiconductor chips with die bond films that have been sufficiently expanded during room temperature expansion. When released, the elasticity reduces and alleviates the force of shrinkage. As a result, even if the expanded state is canceled, the kerf width may shrink to some extent, but it will not shrink excessively from the original spacing and can be maintained at a constant amount. Further, it is also possible to prevent damage to edges due to contact between adhesive layers attached to semiconductor chips or interference between semiconductor chips.

Furthermore, the dicing tape 10 of the present invention has a heat shrinkage rate of 20% or more after 100% stretching and holding for 100 seconds at 80°C in the MD direction of the base film 1. The thermal resistance of the adhesive layer 2 on the adhesive layer 1 is 0.45 K·cm ² /W or less. As a result, in the heat shrink process, in the heat shrink process, the slack part of the dicing tape 10 that occurs during room temperature expansion (the part outside the area where the plurality of cut semiconductor chips with die bond films are attached), When hot air is blown from the adhesive layer 2 side, the applied heat is efficiently transferred to the base film 1, so the loose parts are heated and shrunk in a shorter time than before, causing heat wrinkles. This makes it possible to remove slack without causing damage. As a result, even if the takt time of the heat shrink process is made shorter than before, it is possible to bring the slack part of the dicing tape 10 into a tensioned state where a predetermined tension is applied, and the adjacent die bond film (adhesive The kerf width widened by expansion can be sufficiently maintained to the extent that damage to the edges due to contact and re-adhesion of the adhesive layers and interference between semiconductor chips can be suppressed.

In this way, in the MD direction of the base film 1, the tensile strength at 100% stretching at 23°C, the stress relaxation rate after 100% stretching at 23°C for 100 seconds, and the stress relaxation rate after 100% stretching at 80°C and holding for 100 seconds. By setting the heat shrinkage rate of the adhesive layer 2 within a predetermined range and further setting the heat resistance of the adhesive layer 2 within a predetermined range, it is possible to suppress narrowing of the kerf width immediately after room temperature expansion, and to prevent the kerf width from becoming narrower in the heat shrink process after room temperature expansion. Because it is possible to heat-shrink the dicing tape sufficiently and uniformly in a shorter time than before, adjacent die bond films (adhesive layers) may come into contact with each other and re-adhere, and semiconductor chips may interfere with each other, causing edges to shrink. The width of the expanded kerf can be maintained sufficiently to the extent that damage to the kerf can be suppressed.

Next, by irradiating the dicing tape 10 with active energy rays from the base film 1 side, the adhesive layer 2 is cured and shrunk, and the adhesive force of the adhesive layer 2 to the die bond film 3a is reduced ( Step S207 in FIG. 5: active energy ray irradiation step). Here, the active energy rays used for the post-irradiation include ultraviolet rays, visible rays, infrared rays, electron beams, β rays, γ rays, and the like. Among these active energy rays, ultraviolet rays (UV) and electron beams (EB) are preferred, and ultraviolet rays (UV) are particularly preferably used. The light source for irradiating the ultraviolet rays (UV) is not particularly limited, but includes, for example, a black light, an ultraviolet fluorescent lamp, a low-pressure mercury lamp, a medium-pressure mercury lamp, a high-pressure mercury lamp, an ultra-high-pressure mercury lamp, a carbon arc lamp, a metal halide lamp, and a xenon lamp. A lamp etc. can be used. Furthermore, ArF excimer laser, KrF excimer laser, excimer lamp, synchrotron radiation, etc. can also be used. The amount of ultraviolet (UV) irradiation is not particularly limited, and is preferably in the range of 100 mJ/cm ² or more and 2,000 mJ/cm ² or less, and preferably in the range of 300 mJ/cm ² or more and 1,000 mJ/cm ² or less. It is more preferable that

Next, a so-called pick-up process is performed in which each of the diced semiconductor chips 30a with die-bonding films (adhesive layers) 3a is peeled off from the adhesive layer 2 of the dicing tape 10 after being irradiated with ultraviolet (UV) light (as shown in FIG. 5). Step S208: Peeling (pickup) step).

As shown in FIG. 8(e), for example, as shown in FIG. 60, and as shown in FIG. 8(f), the semiconductor chip 30a with the die bond film (adhesive layer) 3a that has been pushed up is suctioned by a suction collet 50 of a pickup device (not shown) to remove the dicing tape 10. Examples include a method of peeling off the adhesive layer 2. Thereby, a semiconductor chip 30a with a die bond film (adhesive layer) 3a is obtained.

The pickup conditions are not particularly limited as long as they are within a practically acceptable range, and the thrusting speed of the thrusting pin (needle) 60 is usually set within a range of 1 mm/sec to 100 mm/sec. However, if the thickness of the semiconductor chip 30a (thickness of the semiconductor wafer) is as thin as 100 μm, the speed should be set within the range of 1 mm/sec to 20 mm/sec from the viewpoint of suppressing damage to the thin film semiconductor chip 30a. It is preferable. From the viewpoint of productivity, it is more preferable that the speed can be set within a range of 5 mm/sec or more and 20 mm/sec or less.

Further, from the same viewpoint as described above, it is preferable that the push-up height of the push-up pins at which the semiconductor chip 30a can be picked up without being damaged can be set within a range of 100 μm or more and 600 μm or less. From the viewpoint of reduction, it is more preferable that the thickness can be set within a range of 100 μm or more and 450 μm or less. From the viewpoint of productivity, it is particularly preferable that the thickness can be set within the range of 100 μm or more and 350 μm or less. It can be said that a dicing tape that can reduce the push-up height has excellent pick-up properties.

The manufacturing method explained in FIGS. 8(a) to 8(f) is an example (SDBG) of the manufacturing method of the semiconductor chip 30a using the dicing die bond film 20, and the dicing tape 10 is used in the form of the dicing die bond film 20. The methods used are not limited to those described above. That is, the dicing die-bonding film 20 of this embodiment can be used without being limited to the above method as long as it can be attached to the semiconductor wafer 30 during dicing.

As described above, the dicing tape 10 of the present invention can be used as the dicing tape 10 to be integrated with the die bond film 3 and used as the dicing die bond film 20 in a manufacturing method for obtaining a thin film semiconductor chip such as DBG, stealth dicing, SDBG, etc. suitable.

<Method for manufacturing semiconductor devices>
A semiconductor device mounted with a semiconductor chip manufactured using a dicing die bond film 20 that is an integrated combination of a dicing tape 10 and a die bond film 3 to which this embodiment is applied will be specifically described below.

The semiconductor device (semiconductor package) is manufactured by, for example, bonding the semiconductor chip 30a with the die-bonding film (adhesive layer) 3a described above to a support member for mounting a semiconductor chip or a semiconductor chip by heat-pressing, and then a wire bonding process and a sealing process. It can be obtained through a process such as a sealing process using a material.

FIG. 9 shows an example of a semiconductor device with a laminated structure mounted with a semiconductor chip manufactured using a dicing die bond film 20 that integrates a dicing tape 10 and a wire-embedded die bond film 3 to which this embodiment is applied. FIG. 3 is a schematic cross-sectional view of an embodiment. The semiconductor device 70 shown in FIG. 9 includes a semiconductor chip mounting support substrate 4, cured die bond films (adhesive layers) 3a1 and 3a2, a first-stage semiconductor chip 30a1, a second-stage semiconductor chip 30a2, A sealing material 8 is provided. The semiconductor chip mounting support substrate 4, the cured die bond film 3a1, and the semiconductor chip 30a1 constitute a support member 9 for the semiconductor chip 30a2.

A plurality of external connection terminals 5 are arranged on one surface of the support substrate 4 for mounting a semiconductor chip, and a plurality of terminals 6 are arranged on the other surface of the support substrate 4 for mounting a semiconductor chip. The semiconductor chip mounting support substrate 4 has wires 7 for electrically connecting connection terminals (not shown) of the semiconductor chips 30a1 and 30a2 and the external connection terminals 5. The semiconductor chip 30a1 is bonded to the semiconductor chip mounting support substrate 4 by a hardened die bond film 3a1 in such a manner that the unevenness caused by the external connection terminals 5 is embedded. The semiconductor chip 30a2 is bonded to the semiconductor chip 30a1 by a hardened die bond film 3a2. The semiconductor chip 30a1, the semiconductor chip 30a2, and the wire 7 are sealed with a sealing material 8. In this way, the wire-embedded die bond film 3a is suitably used in a semiconductor device having a laminated structure in which a plurality of semiconductor chips 30a are stacked.

Further, FIG. 10 shows one aspect of another semiconductor device mounted with a semiconductor chip manufactured using a dicing die bond film 20 that integrates a dicing tape 10 and a general-purpose die bond film 3 to which this embodiment is applied. FIG. A semiconductor device 80 shown in FIG. 10 includes a semiconductor chip mounting support substrate 4, a hardened die bond film 3a, a semiconductor chip 30a, and a sealing material 8. The semiconductor chip mounting support substrate 4 is a support member for the semiconductor chip 30a, and has connection terminals (not shown) of the semiconductor chip 30a and external connection terminals (not shown) arranged on the main surface of the semiconductor chip mounting support substrate 4. (not shown) has a wire 7 for electrical connection. The semiconductor chip 30a is bonded to the semiconductor chip mounting support substrate 4 by a hardened die bond film 3a. The semiconductor chip 30a and the wires 7 are sealed with a sealing material 8.

The present invention will be explained in more detail with reference to the following examples, but the present invention is not limited thereto.

1. Production of Base Film 1 The following resins were prepared as materials for producing base films 1(a) to (x).

(Thermoplastic crosslinked resin (IO) consisting of an ionomer of ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid ester copolymer)
・Resin (IO1)
Ternary copolymer consisting of ethylene/methacrylic acid/2-methyl-propyl acrylate = 80/10/10 mass ratio, degree of neutralization with Zn ²⁺ ions: 60 mol%, melting point: 86 ° C., MFR: 1 g/ 10 minutes (190°C/2.16kg load), density: 0.96g/cm ³ , Vicat softening point: 56°C

・Resin (IO2)
Ternary copolymer consisting of ethylene/methacrylic acid/2-methyl-propyl acrylate = 80/10/10 mass ratio, degree of neutralization with Zn ²⁺ ions: 70 mol%, melting point: 87°C, MFR: 1 g/ 10 minutes (190°C/2.16kg load), density: 0.96g/cm ³ , Vicat softening point: 57°C

(Polyamide resin (PA))
・Resin (PA1)
Nylon 6, melting point: 225°C, density: 1.13g/ ^cm3

(Other resins (C))
・Resin (TPO)
Thermoplastic polyolefin elastomer (ethylene-α-olefin random copolymer), MFR: 3.6 g/10 min (190°C/2.16 kg load), density: 0.87 g/cm ³ , Vicat softening point: 41°C

・Resin (POPE)
Polyolefin-polyether block copolymer (polymer type antistatic agent), melting point: 115°C, MFR: 15g/10 minutes (190°C/2.16kg load)

・Resin (PP)
Random copolymerized polypropylene, melting point 138°C, Vicat softening point: 110°C

・Resin (LDPE)
Low density polyethylene, melting point 116℃, Vicat softening point: 97℃

・Resin (EVA)
Ethylene-vinyl acetate copolymer, vinyl acetate content 20% by mass, melting point 82°C, density: 0.94g/cm ³ , Vicat softening point: 53°C

・Resin (TPU)
thermoplastic polyurethane

(Base film 1(a))
(IO1) was prepared as a thermoplastic crosslinked resin (IO) consisting of an ionomer, and (PA1) was prepared as a polyamide resin (PA). First, the thermoplastic crosslinked resin (IO1) made of the above ionomer and the above polyamide resin (PA1) were dry blended at a mass ratio of (IO1):(PA1)=90:10. Next, the dry blended mixture was charged into the resin inlet of a twin-screw extruder and melt-kneaded at a die temperature of 230°C to obtain a resin composition for base film 1(a). The obtained resin composition was put into each extruder using a 3-layer T-die film molding machine of 1 type (same resin) and molded at a processing temperature of 240°C to form a 3-layer structure of the same resin. A base film 1(a) having a thickness of 90 μm was produced. The thickness of each layer was 1st resin layer (side in contact with adhesive layer 2)/2nd resin layer/3rd resin layer=30 μm/30 μm/30 μm. The mass ratio of the total amount of thermoplastic crosslinked resin (IO) consisting of an ionomer and the total amount of polyamide resin (PA) in the entire layer is: total amount of (IO): total amount of (PA) = 90:10.

(Base film 1(b))
The thermoplastic crosslinked resin (IO1) made of the above ionomer and the above polyamide resin (PA1) were dry blended at a mass ratio of (IO1):(PA1)=85:15. Similarly, a base film 1(b) with a thickness of 90 μm and having a three-layer structure made of the same resin composition was produced. The thickness of each layer was 1st resin layer (side in contact with adhesive layer 2)/2nd resin layer/3rd resin layer=30 μm/30 μm/30 μm. The mass ratio of the total amount of thermoplastic crosslinked resin (IO) consisting of an ionomer and the total amount of polyamide resin (PA) in the entire layer is: total amount of (IO): total amount of (PA) = 85:15.

(Base film 1(c))
The thermoplastic crosslinked resin (IO1) made of the ionomer and the polyamide resin (PA1) were dry blended at a mass ratio of (IO1):(PA1)=80:20, except that the base film 1(a) and Similarly, a base film 1(c) with a thickness of 90 μm and having a three-layer structure made of the same resin composition was produced. The thickness of each layer was 1st resin layer (side in contact with adhesive layer 2)/2nd resin layer/3rd resin layer=30 μm/30 μm/30 μm. The mass ratio of the total amount of thermoplastic crosslinked resin (IO) consisting of an ionomer and the total amount of polyamide resin (PA) in the entire layer is: total amount of (IO): total amount of (PA) = 80:20.

(Base film 1(d))
The thermoplastic crosslinked resin (IO) consisting of the above ionomer (IO1), the polyamide resin (PA) (PA1), and the other resin (C) include a thermoplastic polyolefin elastomer (ethylene-α-olefin random copolymer) (TPO). ) was prepared. First, as resins for the first resin layer and the third resin layer, the thermoplastic crosslinked resin (IO1) made of the above ionomer and the above polyamide resin (PA1) were used at a mass ratio of (IO1):(PA1)=85:15. It was dry blended. Next, the dry blended mixture is introduced into the resin inlet of the twin-screw extruder and melt-kneaded at a die temperature of 230°C, thereby forming the first and third resin layers of the base film 1(d). A resin composition was obtained.

Further, as the resin for the second resin layer, the above thermoplastic polyolefin elastomer (ethylene-α-olefin random copolymer) = (TPO) was used alone. The respective resin compositions and resins were put into respective extruders using a 2-type (2 types of resin) 3-layer T-die film molding machine, and molded at a processing temperature of 240°C. A base film 1(d) having a three-layer structure and having a thickness of 90 μm was produced using the composition. The thickness of each layer was 1st resin layer (side in contact with adhesive layer 2)/2nd resin layer/3rd resin layer=30 μm/30 μm/30 μm. The mass ratio of the total amount of thermoplastic crosslinked resin (IO) consisting of an ionomer and the total amount of polyamide resin (PA) in the entire layer is: total amount of (IO): total amount of (PA) = 85:15. Further, the total content of resin (IO) and resin (PA) in the entire layer was 67% by mass.

(Base film 1(e))
(IO1) and (IO2) were prepared as thermoplastic crosslinked resins (IO) comprising the above ionomer, and (PA1) were prepared as polyamide resin (PA). First, as resins for the first resin layer and the third resin layer, the thermoplastic crosslinked resin (IO1) made of the above ionomer and the above polyamide resin (PA1) were used at a mass ratio of (IO1):(PA1)=90:10. It was dry blended. Next, the dry blended mixture is introduced into the resin inlet of the twin-screw extruder and melt-kneaded at a die temperature of 230°C to form the first and third resin layers of the base film 1(e). A resin composition was obtained. Further, as the resin for the second resin layer, the thermoplastic crosslinked resin (IO2) made of the above-mentioned ionomer was used alone. The respective resin compositions and resins were put into respective extruders using a 2-type (2 types of resin) 3-layer T-die film molding machine, and molded at a processing temperature of 240°C. A base film 1(e) having a three-layer structure and having a thickness of 90 μm was produced using the composition. The thickness of each layer was 1st resin layer (side in contact with adhesive layer 2)/2nd resin layer/3rd resin layer=30 μm/30 μm/30 μm. The mass ratio of the total amount of thermoplastic crosslinked resin (IO) consisting of an ionomer and the total amount of polyamide resin (PA) in the entire layer is: total amount of (IO): total amount of (PA) = 93:7.

(Base film 1(f))
The thermoplastic crosslinked resin (IO) consisting of the above ionomer (IO1), the polyamide resin (PA) (PA1), and the other resin (C) include a thermoplastic polyolefin elastomer (ethylene-α-olefin random copolymer) (TPO). ) and a polyolefin-polyether block copolymer (POPE) were prepared. First, as resins for the first resin layer and the second resin layer, the thermoplastic crosslinked resin (IO1) made of the above ionomer and the above polyamide resin (PA1) were used at a mass ratio of (IO1):(PA1)=90:10. Dry blended. Next, the dry blended mixture is introduced into the resin inlet of the twin-screw extruder and melt-kneaded at a die temperature of 230°C to form the first and second resin layers of the base film 1 (g). A resin composition was obtained.

In addition, as the resin for the third resin layer, a thermoplastic crosslinked resin (IO1) consisting of an ionomer, a polyamide resin (PA1), a thermoplastic polyolefin elastomer (TPO), and a polyolefin-polyether block copolymer (POPE) were used, respectively. Dry blending was performed at a mass ratio of 76:8:8:8. Next, the dry blended mixture was charged into the resin inlet of the twin screw extruder and melt-kneaded at a die temperature of 230°C to obtain a resin composition for the third resin layer of the base film 1(f). Ta. Each resin composition was put into each extruder using a two-type (two types of resin) three-layer T-die film molding machine, and molded at a processing temperature of 240°C to form two types of resin compositions. A base film 1(f) having a three-layer structure and having a thickness of 80 μm was produced. The thickness of each layer was 1st resin layer (side in contact with adhesive layer 2)/2nd resin layer/3rd resin layer=30 μm/30 μm/20 μm. The mass ratio of the total amount of thermoplastic crosslinked resin (IO) consisting of an ionomer and the total amount of polyamide resin (PA) in the entire layer is: total amount of (IO): total amount of (PA) = 90:10. Further, the total content of resin (IO) and resin (PA) in the entire layer was 95% by mass.

(Base film 1 (g))
As other resins (C), random copolymerized polypropylene (PP) and ethylene-vinyl acetate copolymer (EVA) were prepared. Random copolymerized polypropylene (PP) was used for the first and third resin layers, and ethylene-vinyl acetate copolymer (EVA) was used for the second resin layer. Resin) A base film 1 (g) with a thickness of 80 μm and having a three-layer structure made of two types of resins was produced using a three-layer T-die film molding machine. The thickness of each layer was 1st resin layer (side in contact with adhesive layer 2)/2nd resin layer/3rd resin layer=8 μm/64 μm/8 μm. The mass ratio of PP/EVA in the entire layer is PP/EVA=20% by mass/80% by mass.

(Base film 1 (h))
As other resins (C), random copolymerized polypropylene (PP) and low density polyethylene (LDPE) were prepared. Random copolymerized polypropylene (PP) is used for the first resin layer and third resin layer, and low density ethylene (LDPE) is used for the second resin layer. Three layers of two types (two types of resin) of each resin are used. A base film 1 (h) with a thickness of 90 μm and having a three-layer structure made of two types of resins was produced using a T-die film molding machine. The thickness of each layer was 1st resin layer (side in contact with adhesive layer 2)/2nd resin layer/3rd resin layer=10 μm/70 μm/10 μm. The mass ratio of PP/LDPE for the entire layer is PP/LDPE=22% by mass/78% by mass.

(Base film 1(i))
(IO1) was prepared as a thermoplastic crosslinked resin (IO) consisting of the above ionomer, and ethylene-vinyl acetate copolymer (EVA) and thermoplastic polyurethane (TPU) were prepared as other resins (C). First, as a resin for the second resin layer, the thermoplastic crosslinked resin (IO1) made of the above ionomer and the above thermoplastic polyurethane (TPU) were dry blended at a mass ratio of (IO1):(TPU) = 50:50. . Next, the dry-blended mixture was charged into the resin inlet of the twin-screw extruder and melt-kneaded to obtain a resin composition for the second resin layer of the base film 1(i). Further, the above ethylene-vinyl acetate copolymer (EVA) was used alone as the resin for the first resin layer and the third resin layer. The respective resins and resin compositions were put into respective extruders using a two-type (two-type resin) three-layer T-die film molding machine, and a three-layer structure made of two types of resin compositions was formed with a thickness of 90 μm. A base film 1(f) was prepared. The thickness of each layer was 1st resin layer (side in contact with adhesive layer 2)/2nd resin layer/3rd resin layer=30 μm/30 μm/30 μm. The mass ratio of EVA/IO/TPU as a whole layer is EVA/IO/TPU=67% by mass/16.5/16.5% by mass.

[Tensile strength of base film]
The tensile strength of the base film 1 at 100% stretching at 23° C. was measured by the following method. First, a test piece having a length of 100 mm (MD direction) and a width of 10 mm (TD direction) was prepared as a sample for MD direction measurement (number of samples N=5). Next, under a temperature condition of 23°C, using a tensile compression tester (model: MinebeaTechnoGraph TG-5kN) manufactured by MinebeaMitsumi Co., Ltd., both ends of the test piece in the length direction were tested so that the initial distance between the chucks was 50 mm. It was fixed with a chuck and subjected to a tensile test at a speed of 300 mm/min, and the tensile load-elongation curve was measured. Then, from the obtained tensile load-elongation curve, the tensile load value at 100% elongation (distance between chucks 100 mm) is determined, and the value is divided by the thickness of the base film 1 to obtain the tensile strength (unit: MPa) was calculated. Measurements were performed with the number of samples N=5, and the average value was taken as the tensile strength at 100% stretching in the MD direction at 23°C.

[Stress relaxation rate of base film]
The stress relaxation rate of the base film 1 after 100% stretching and holding for 100 seconds at 23° C. was measured by the following method. First, a test piece having a length of 100 mm (MD direction) and a width of 10 mm (TD direction) was prepared as a sample for MD direction measurement (number of samples N=5). Next, under a temperature condition of 23°C, using a tensile compression tester (model: MinebeaTechnoGraph TG-5kN) manufactured by MinebeaMitsumi Co., Ltd., both longitudinal ends of the test piece were chucked so that the initial distance between the chucks was 50 mm. Fix with a chuck and perform a tensile test at a speed of 300 mm/min, tensile load value A when 100% stretched, and tensile load value B after holding for 100 seconds with the 100% stretching strain applied. I asked for And the following formula

Stress relaxation rate (%) after 100% stretching and holding for 100 seconds = [(AB)/A] x 100
The stress relaxation rate after 100% stretching and holding for 100 seconds was calculated. Measurements were performed with the number of samples N=5, and the average value was taken as the stress relaxation rate after 100% stretching and holding for 100 seconds at 23° C. in the MD direction.

[Heat shrinkage rate of base film]
The heat shrinkage rate of the base film 1 after 100% stretching and holding for 100 seconds at 80° C. was measured by the following method. First, prepare a test piece with a length of 100 mm (MD direction) and a width of 10 mm (TD direction) as a sample for MD direction measurement (number of samples N = 5), and mark it with two marked lines at an interval of 50 mm. did. Next, under a temperature condition of 23°C, using a tensile compression tester (model: MinebeaTechnoGraph TG-5kN) manufactured by MinebeaMitsumi Co., Ltd., both longitudinal ends of the test piece were measured with an initial distance of 50 mm between chucks (initial gauge line). Fix it with a chuck so that the distance between The distance C was measured. Next, the chuck at the lower end was opened to make the test piece of the base film 1 tension-free, and it was placed in a constant temperature bath (model: THB-A13-038) manufactured by MinebeaMitsumi Co., Ltd. at 80°C for 1 minute. After heating, the distance D between the marked lines was measured again. And the following formula

Heat shrinkage rate (%) after 100% stretching and holding for 100 seconds = [(CD)/C] x 100

The heat shrinkage rate after 100% stretching and holding for 100 seconds was calculated. Measurements were performed with the number of samples N=5, and the average value was taken as the heat shrinkage rate after 100% stretching and holding for 100 seconds at 80° C. in the MD direction.

2. Preparation of adhesive composition solution
Solutions of the following active energy ray-curable acrylic adhesive compositions 2(a) to 2(g) were prepared as adhesive compositions for the adhesive layer 2 of the dicing tape 10.

In addition, as a copolymerization monomer component constituting the base polymer (acrylic acid ester copolymer) of these adhesive compositions,
・2-ethylhexyl acrylate (2-EHA, molecular weight: 184.3, Tg: -70°C),
・2-hydroxyethyl acrylate (2-HEA, molecular weight: 116.12, Tg: -15°C),
・Methacrylic acid (MAA, molecular weight: 86.06, Tg: 228°C),
prepared.

In addition, as a polyisocyanate crosslinking agent, a TDI type polyisocyanate crosslinking agent manufactured by Tosoh Corporation (trade name: Coronate L-45E, solid content concentration: 45% by mass, isocyanate group content in solution: 8. 05% by mass, isocyanate group content in solid content: 17.89% by mass, calculated number of isocyanate groups: average 2.8 pieces/1 molecule, theoretical molecular weight: 656.64),

・HDI-based polyisocyanate crosslinking agent (trade name: Coronate HL, solid content concentration: 75% by mass, isocyanate group content in solution: 12.8% by mass, isocyanate group content in solid content: 17.07 Mass %, calculated number of isocyanate groups: average 2.6/1 molecule, theoretical molecular weight: 638.75),
prepared.

(Solution of active energy ray-curable acrylic adhesive composition 2(a))
As copolymerization monomer components, 2-ethylhexyl acrylate (2-EHA), 2-hydroxyethyl acrylate (2-HEA), and methacrylic acid (MAA) were prepared. These copolymerization monomer components were mixed into 2-EHA/2-HEA/MAA=78.5 parts by mass/21.0 parts by mass/0.5 parts by mass (=425.94 mmol/180.85 mmol/5.81 mmol). A base polymer having a hydroxyl group (acrylic ester copolymer ) solution was synthesized. The Tg of the obtained base polymer calculated from the Fox equation is -60°C.

Next, to 100 parts by mass of the solid content of this base polymer, an active energy ray-reactive compound manufactured by Showa Denko K.K. was added with an isocyanate group and an active energy ray-reactive carbon-carbon double bond (manufactured by Showa Denko K.K.). 2-Isocyanate ethyl methacrylate (trade name: Karenz MOI, molecular weight: 155.15, isocyanate group: 1 piece/1 molecule, double bond group: 1 piece/1 molecule) 21.0 parts by mass (135.35 mmol: 74.8 mol% based on 2-HEA) and reacted with a part of the hydroxyl groups of 2-HEA to form a solution of acrylic adhesive polymer (A) having a carbon-carbon double bond in the side chain ( Solid content concentration: 50% by mass, weight average molecular weight Mw: 400,000, molecular weight distribution (Mw/Mn): 9.5, solid content hydroxyl value: 21.1 mgKOH/g, solid content acid value: 2.7 mgKOH/g, Carbon-carbon double bond content: 1.12 mmol/g) was synthesized. In the above reaction, 0.05 parts by mass of hydroquinone monomethyl ether was used as a polymerization inhibitor to maintain the reactivity of the carbon-carbon double bond.

Subsequently, IGM Resins B. V. 2.0 parts by mass of an α-hydroxyalkylphenone photopolymerization initiator (trade name: Omnirad 184) manufactured by IGM Resins B. V. 0.4 parts by mass of an acylphosphine oxide photopolymerization initiator (trade name: Omnirad 819) manufactured by Tosoh Corporation; Solid content concentration: 45% by mass) was blended at a ratio of 2.56 parts by mass (1.15 parts by mass in terms of solid content, 1.75 mmol), diluted with ethyl acetate and stirred to obtain a solid content concentration of 22% by mass. A solution of active energy ray-curable acrylic adhesive composition 2(a) was prepared.

(Solution of active energy ray-curable acrylic adhesive composition 2(b))
As copolymerization monomer components, 2-ethylhexyl acrylate (2-EHA), 2-hydroxyethyl acrylate (2-HEA), and methacrylic acid (MAA) were prepared. These copolymerization monomer components were mixed into 2-EHA/2-HEA/MAA=78.5 parts by mass/21.0 parts by mass/0.5 parts by mass (=425.94 mmol/180.85 mmol/5.81 mmol). Living radical polymerization (solution polymerization) was performed using ethyl acetate as a solvent and ethyl 2-methyl-2-n-butylterranyl-propionate and azobisisobutyronitrile (AIBN) as an initiator. A solution of a base polymer (acrylic acid ester copolymer) having a hydroxyl group was synthesized. The Tg of the obtained base polymer calculated from the Fox equation is -60°C.

Next, to 100 parts by mass of the solid content of this base polymer, an active energy ray-reactive compound manufactured by Showa Denko K.K. was added with an isocyanate group and an active energy ray-reactive carbon-carbon double bond (manufactured by Showa Denko K.K.). 2-Isocyanate ethyl methacrylate (trade name: Karenz MOI, molecular weight: 155.15, isocyanate group: 1 piece/1 molecule, double bond group: 1 piece/1 molecule) 21.0 parts by mass (135.35 mmol: 74.8 mol% based on 2-HEA) and reacted with some of the hydroxyl groups of 2-HEA to form a solution of acrylic adhesive polymer (B) having a carbon-carbon double bond in the side chain ( Solid content concentration: 50% by mass, weight average molecular weight Mw: 410,000, molecular weight distribution (Mw/Mn): 1.8, solid content hydroxyl value: 21.1 mgKOH/g, solid content acid value: 2.7 mgKOH/g, Carbon-carbon double bond content: 1.12 mmol/g) was synthesized. In the above reaction, 0.05 parts by mass of hydroquinone monomethyl ether was used as a polymerization inhibitor to maintain the reactivity of the carbon-carbon double bond.

Subsequently, IGM Resins B. V. 2.0 parts by mass of an α-hydroxyalkylphenone photopolymerization initiator (trade name: Omnirad 184) manufactured by IGM Resins B. V. 0.4 parts by mass of an acylphosphine oxide photopolymerization initiator (trade name: Omnirad 819) manufactured by Tosoh Corporation; Solid content concentration: 45% by mass) was blended at a ratio of 2.56 parts by mass (1.15 parts by mass in terms of solid content, 1.75 mmol), diluted with ethyl acetate and stirred to obtain a solid content concentration of 22% by mass. A solution of active energy ray-curable acrylic adhesive composition 2(b) was prepared.

(Solution of active energy ray-curable acrylic adhesive composition 2(c))
As copolymerization monomer components, 2-ethylhexyl acrylate (2-EHA), 2-hydroxyethyl acrylate (2-HEA), and methacrylic acid (MAA) were prepared. These copolymerization monomer components were mixed into 2-EHA/2-HEA/MAA=78.5 parts by mass/21.0 parts by mass/0.5 parts by mass (=425.94 mmol/180.85 mmol/5.81 mmol). A base polymer having a hydroxyl group (acrylic ester copolymer ) solution was synthesized. The obtained base polymer (acrylic adhesive polymer) has a Tg of -60° C., a weight average molecular weight Mw of 400,000, and a molecular weight distribution (Mw/Mn) of 9.5, as calculated by Fox's formula.

Next, based on 100 parts by mass of the solid content of this base polymer, 120 parts by mass of an ultraviolet curable urethane acrylate oligomer (weight average molecular weight Mw: 1,000, hydroxyl value: 1 mgKOH /g, double bond equivalent: 167), IGM Resins B.I. is used as a photopolymerization initiator. V. 1.0 parts by mass of an α-aminoalkylphenone photopolymerization initiator (trade name: Omnirad 369) manufactured by Tosoh Corporation, and an isocyanate crosslinking agent manufactured by Tosoh Corporation (trade name: Coronate L-45, solid content concentration: 45% by mass) at a ratio of 11.1 parts by mass (5.0 parts by mass in terms of solid content), diluted with ethyl acetate and stirred to obtain an active energy ray-curable acrylic system with a solid content concentration of 22% by mass. A solution of adhesive composition 2(c) was prepared.

(Solution of active energy ray-curable acrylic adhesive composition 2(d))
As copolymerization monomer components, 2-ethylhexyl acrylate (2-EHA), 2-hydroxyethyl acrylate (2-HEA), and methacrylic acid (MAA) were prepared. These copolymerization monomer components were mixed into 2-EHA/2-HEA/MAA=78.5 parts by mass/21.0 parts by mass/0.5 parts by mass (=425.94 mmol/180.85 mmol/5.81 mmol). Living radical polymerization (solution polymerization) was performed using ethyl acetate as a solvent and ethyl 2-methyl-2-n-butylterranyl-propionate and azobisisobutyronitrile (AIBN) as an initiator. A solution of a base polymer (acrylic acid ester copolymer) having a hydroxyl group was synthesized. The obtained base polymer had a Tg calculated from the Fox equation of -60°C, a weight average molecular weight Mw of 410,000, and a molecular weight distribution (Mw/Mn) of 1.8.

Next, based on 100 parts by mass of the solid content of this base polymer, 120 parts by mass of an ultraviolet curable urethane acrylate oligomer (weight average molecular weight Mw: 1,000, hydroxyl value: 1 mgKOH /g, double bond equivalent: 167), IGM Resins B.I. is used as a photopolymerization initiator. V. 1.0 parts by mass of an α-aminoalkylphenone photopolymerization initiator (trade name: Omnirad 369) manufactured by Tosoh Corporation, and an isocyanate crosslinking agent manufactured by Tosoh Corporation (trade name: Coronate L-45, solid content concentration: 45% by mass) at a ratio of 11.1 parts by mass (5.0 parts by mass in terms of solid content), diluted with ethyl acetate and stirred to obtain an active energy ray-curable acrylic system with a solid content concentration of 22% by mass. A solution of adhesive composition 2(d) was prepared.

(Solution of active energy ray-curable acrylic adhesive composition 2(e))
Aluminum oxide (average particle diameter: 1.2 μm, true specific gravity: 3.95) was added as a thermally conductive filler to the solution of the active energy ray-curable acrylic adhesive composition 2(b) at a volume ratio of 20 μm. %, active energy ray-curable acrylic adhesive except that an amphoteric dispersant (manufactured by BYK Chemie, trade name "DISPERBYK145") was further blended at 2.34 parts by mass with respect to the thermally conductive filler and stirred. A solution of active energy ray-curable acrylic adhesive composition 2(e) having a solid content concentration of 22% by mass was prepared in the same manner as the preparation of the solution of agent composition 2(b). Dispersant (ampholytic dispersant): 2.34 parts

(Solution of active energy ray-curable acrylic adhesive composition 2(f))
Aluminum oxide (average particle size: 1.2 μm, true specific gravity: 3.95) was added as a thermally conductive filler at a volume ratio of 10 to the solution of the active energy ray-curable acrylic adhesive composition 2(b). %, active energy ray-curable acrylic adhesive except that an amphoteric dispersant (manufactured by BYK Chemie Co., Ltd., trade name "DISPERBYK145") was further blended at 2.34 parts by mass with respect to the thermally conductive filler and stirred. A solution of active energy ray-curable acrylic adhesive composition 2(f) having a solid content concentration of 22% by mass was prepared in the same manner as the preparation of the solution of agent composition 2(b).

(Solution of active energy ray-curable acrylic adhesive composition 2 (g))
Aluminum oxide (average particle diameter: 1.2 μm, true specific gravity: 3.95) was added as a thermally conductive filler at a volume ratio of 10 to the solution of the active energy ray-curable acrylic adhesive composition 2(d). %, active energy ray-curable acrylic adhesive except that an amphoteric dispersant (manufactured by BYK Chemie Co., Ltd., trade name "DISPERBYK145") was further blended at 2.34 parts by mass with respect to the thermally conductive filler and stirred. A solution of active energy ray-curable acrylic adhesive composition 2(g) having a solid content concentration of 22% by mass was prepared in the same manner as the preparation of the solution of agent composition 2(d).

[Heat resistance of adhesive layer]
The thermal resistance of the adhesive layer 2 was measured by the following method. First, on the release-treated side of a 38 μm thick release PET liner (manufactured by Nakamoto Pax Co., Ltd., trade name “NS-38+A”), apply the active energy ray-curable acrylic to a dry thickness of 100 μm. After applying a solution of the adhesive composition and drying the solvent by heating at a temperature of 100°C for 3 minutes, a 50 μm thick release PET liner (Nakamoto Pax Co., Ltd.) was placed on top of the adhesive layer. A pressure-sensitive adhesive sheet without a base material was prepared by overlapping the release-treated sides of the adhesive sheet (trade name: "NS-50-ZW" manufactured by Mimaki Co., Ltd., trade name "NS-50-ZW"). Thereafter, the adhesive sheet was stored at a temperature of 23° C. for 96 hours to crosslink and cure the adhesive layer. Next, the crosslinked and cured adhesive sheet without a base material was cut into a size of 150 mm in length and 50 mm in width to prepare an evaluation sample with only the adhesive layer from which the release PET liner was completely removed. 10 sheets were stacked to form a laminate consisting only of the adhesive layer with a total thickness of 1 mm, and a hot wire method was used to measure the thin film using a rapid thermal conductivity meter "QTM-500 (model)" manufactured by Kyoto Electronics Co., Ltd. The thermal conductivity λ of a laminate consisting only of the above-mentioned adhesive layer in combination with software was measured. Silicone resin, quartz, and zirconia were used as references for this measurement. And the following formula

Thermal resistance (K・cm ² /W) = (L/100)/λ

From this, the thermal resistance of the adhesive layer 2 was calculated. Here, L is the actual thickness (unit: μm) of the adhesive layer 2 of the dicing tape 10. Measurements were performed with the number of samples N=3, and the average value was taken as the thermal resistance of the adhesive layer 2.

3. Preparation of Solutions of Adhesive Compositions Solutions of the following adhesive compositions 3(a) and 3(b) were prepared as adhesive compositions for the die bond film (adhesive layer) 3 of the dicing die bond film 20.

(Solution of adhesive composition 3(a))
A solution of the following adhesive composition 3(a) was prepared for use in a general-purpose die bond film. First, 54 parts by mass of a cresol novolac type epoxy resin (trade name: YDCN-700-10, epoxy equivalent weight 210, softening point 80°C) manufactured by Toto Kasei Co., Ltd. as a thermosetting resin, and a crosslinking agent manufactured by Mitsui Chemicals Co., Ltd. 46 parts by mass of phenol resin (trade name: Mirex XLC-LL, hydroxyl equivalent: 175, water absorption rate: 1.8%), silica manufactured by Nippon Aerosil Co., Ltd. (trade name: Aerosil R972, average particle size 0.5%) as an inorganic filler. Cyclohexanone was added as a solvent to a resin composition consisting of 32 parts by mass of 016 μm), stirred and mixed, and further dispersed for 90 minutes using a bead mill.

Next, a glycidyl group-containing (meth)acrylic acid ester copolymer manufactured by Nagase ChemteX Co., Ltd. (trade name: HTR-860P-3CSP, glycidyl (meth)acrylate content: 3) was added to the resin composition as a thermoplastic resin. % by mass, weight average molecular weight Mw: 800,000, Tg: -7°C) 274 parts by mass, γ-ureidopropyltriethoxysilane (trade name: NUC A-1160) manufactured by GE Toshiba Corporation as a silane coupling agent5. 0 parts by mass, 1.7 parts by mass of γ-ureidopropyltriethoxysilane (trade name: NUC A-189) manufactured by GE Toshiba Corporation, and 1-cyanoethyl-2-phenyl manufactured by Shikoku Kasei Co., Ltd. as a curing accelerator. Add 0.1 part by mass of imidazole (trade name: Curazole 2PZ-CN), stir and mix, filter through a 100 mesh filter, and vacuum deaerate to obtain adhesive composition 3(d) with a solid content concentration of 20% by mass. A solution was prepared. The content ratio of each resin component in the total amount of resin components (total mass of thermoplastic resin, thermosetting resin, and crosslinking agent) is: glycidyl group-containing (meth)acrylic acid ester copolymer: epoxy resin: phenol resin = 73.3 Mass %: 14.4 mass %: 12.3 mass %. Further, the content of the inorganic filler was 8.6% by mass based on the total amount of resin components.

(Solution of adhesive composition 3(b))
A solution of the following adhesive composition solution 3(b) was prepared for a wire-embedded die bond film. First, as a thermosetting resin, 26 parts by mass of bisphenol type epoxy resin (trade name: R2710, epoxy equivalent: 170, molecular weight: 340, liquid at room temperature) manufactured by Printec Co., Ltd., and cresol novolac type epoxy resin manufactured by Toto Kasei Co., Ltd. 36 parts by mass of resin (trade name: YDCN-700-10, epoxy equivalent: 210, softening point: 80°C), phenol resin manufactured by Mitsui Chemicals, Inc. (trade name: Mirex XLC-LL, hydroxyl equivalent: 175, softening) as a crosslinking agent point: 77°C, water absorption rate: 1% by mass, heating mass loss rate: 4% by mass) 1 part by mass, phenolic resin manufactured by Air Water Co., Ltd. (trade name: HE200C-10, hydroxyl equivalent: 200, softening point: 71°C, water absorption rate: 1% by mass, heating mass loss rate: 4% by mass) 25 parts by mass, phenolic resin manufactured by Air Water Co., Ltd. (trade name: HE910-10, hydroxyl equivalent: 101, softening point: 83°C) , water absorption rate: 1% by mass, heating mass reduction rate: 3% by mass) 12 parts by mass, silica filler dispersion manufactured by Admatex Co., Ltd. (trade name: SC2050-HLG, average particle size: 0.50 μm) as an inorganic filler 15 parts by mass, 14 parts by mass of silica filler dispersion (trade name: SC1030-HJA, average particle size: 0.25 μm) manufactured by Admatex Co., Ltd., silica manufactured by Nippon Aerosil Co., Ltd. (trade name: Aerosil R972, average particle Cyclohexanone was added as a solvent to a resin composition consisting of 1 part by mass (diameter: 0.016 μm), stirred and mixed, and further dispersed for 90 minutes using a bead mill.

Next, a glycidyl group-containing (meth)acrylic acid ester copolymer manufactured by Nagase ChemteX Co., Ltd. (trade name: HTR-860P-30B-CHN, glycidyl (meth)acrylate content) was added to the resin composition as a thermoplastic resin. : 8% by mass, weight average molecular weight Mw: 230,000, Tg: -7°C) 37 parts by mass, glycidyl group-containing (meth)acrylic acid ester copolymer manufactured by Nagase ChemteX Co., Ltd. (product name: HTR-860P-) 3CSP, glycidyl (meth)acrylate content: 3% by mass, weight average molecular weight Mw: 800,000, Tg: -7°C) 9 parts by mass, γ-ureidopropyltriethoxysilane manufactured by GE Toshiba Corporation as a silane coupling agent. (Product name: NUC A-1160) 0.7 parts by mass, GE Toshiba Corporation's γ-ureidopropyltriethoxysilane (Product name: NUC A-189) 0.3 parts by mass, and Shikoku Kasei as a curing accelerator. Add 0.03 parts by mass of 1-cyanoethyl-2-phenylimidazole (trade name: Curazol 2PZ-CN) manufactured by Co., Ltd., stir and mix, filter through a 100 mesh filter, and vacuum degas to give a solid content concentration of 20. A solution of adhesive composition 3(a) in % by weight was prepared. The content ratio of each resin component in the total amount of resin components (total mass of thermoplastic resin, thermosetting resin, and crosslinking agent) is: glycidyl group-containing (meth)acrylic acid ester copolymer: epoxy resin: phenol resin = 31.5 Mass %: 42.5 mass %: 26.0 mass %. Further, the content of the inorganic filler was 20.5% by mass based on the total amount of resin components.

[Measurement of shear viscosity of die bond film (adhesive layer) 3 at 80°C]
The shear viscosity at 80° C. of each die bond film (adhesive layer) 3 film formed from the solutions of adhesive compositions 3(a) and 3(b) was measured by the following method.

A laminate was prepared by laminating a plurality of die bond films (adhesive layer) 3 from which the release liner had been removed at 70° C. so that the total thickness was 200 to 210 μm. Next, the laminate was punched out in the thickness direction into a size of 10 mm x 10 mm to obtain a measurement sample. Subsequently, using a dynamic viscoelasticity device ARES (manufactured by Rheometric Scientific F.E.), a circular aluminum plate jig with a diameter of 8 mm was attached, and then a measurement sample was set. While applying 5% strain to the measurement sample at 35°C, the shear viscosity was measured while raising the temperature of the measurement sample at a heating rate of 5°C/min, and the shear viscosity value at 80°C was determined.

4. Production of dicing tape 10 and dicing die bond film 20 (Example 1)
The active energy ray curing was applied to the release-treated side of a 38 μm thick release PET liner (manufactured by Nakamoto Pax Co., Ltd., trade name “NS-38+A”) so that the thickness of the adhesive layer 2 after drying was 7 μm. After drying the solvent by applying a solution of the acrylic adhesive composition (a) and heating at a temperature of 100° C. for 3 minutes, the first layer of the base film 1(a) is applied onto the adhesive layer 2. The surfaces of the layer sides were bonded together to produce an original plate of the dicing tape 10. Thereafter, the original plate of the dicing tape 10 was stored at a temperature of 23° C. for 96 hours to crosslink and cure the adhesive layer 2.

Next, a solution of adhesive composition 3(a) for forming die bond film (adhesive layer) 3 was prepared, and a release PET liner (manufactured by Nakamoto Pax Co., Ltd., trade name "NS-38+A") with a thickness of 38 μm was prepared. A solution of the adhesive composition 3(a) is applied to the release-treated side so that the thickness of the dried die-bonding film (adhesive layer) 3 is 20 μm, and then heated at a temperature of 90° C. for 5 minutes. Subsequently, the solvent was dried by heating at a temperature of 140° C. in two steps for 5 minutes to produce a die bond film (adhesive layer) 3 provided with a release liner. Note that, if necessary, a protective film (for example, a polyethylene film, etc.) may be attached to the dry side of the die-bonding film (adhesive layer) 3.

Subsequently, the die bond film (adhesive layer) 3 provided with the release liner produced above was cut into a circular shape with a diameter of 335 mm together with the release liner, and the adhesive layer exposed surface (release The liner-free surface) was attached to the two adhesive layer surfaces of the dicing tape 10 from which the release liner had been peeled off. The bonding conditions were a temperature of 23° C., a speed of 10 mm/sec, and a linear pressure of 30 kgf/cm.

Finally, by cutting the dicing tape 10 into a circle with a diameter of 370 mm, a circular die bond film (adhesive layer) 3 with a diameter of 335 mm is laminated on the upper center of the adhesive layer 2 of the circular dicing sheet 10 with a diameter of 370 mm. A dicing die bond film 20 (DDF(a)) was prepared.

(Examples 2 to 6)
A dicing die bond film 20 (DDF ( b) to DDF(f)) were produced.

(Examples 7 to 10)
Dicing die bond films 20 (DDF (g) to DDF (j) ) was created.

(Examples 11 to 16)
A solution of active energy ray-curable acrylic adhesive composition 2(a) was added to a solution of active energy ray-curable acrylic adhesive compositions 2(b) to 2(g) shown in Tables 3 and 4, respectively. Dicing die bond films 20 (DDF(k) to DDF(p)) were produced in the same manner as in Example 1 except for the changes.

(Example 17)
A dicing die bond film 20 (DDF(q)) was produced in the same manner as in Example 14 except that the thickness of the adhesive layer 2 after drying was changed to 15 μm.

(Example 18)
All steps were carried out except that the solution of adhesive resin composition 3(a) was changed to the solution of adhesive composition 3(b) and the thickness of the die bond film (adhesive layer) 3 after drying was changed to 50 μm. A dicing die bond film 20 (DDF(r)) was produced in the same manner as in Example 1.

(Comparative Examples 1 to 3)
Dicing die bond film 20 (DDF(s) ~DDF(u)) was produced.

(Comparative Examples 4 to 6)
Dicing die bond films 20 (DDF(v) to DDF(x)) were prepared in the same manner as in Example 1 except that the thickness of the adhesive layer 2 after drying was changed to the thickness shown in Tables 6 and 7. ) was created.

5. Evaluation of dicing tape The dicing tapes 10 produced in Examples 1 to 18 and Comparative Examples 1 to 6 above were evaluated by the method shown below using dicing die bond films 20 (DDF(a) to DDF(x)). went.

5.1 Breakability of Die Bond Film (Adhesive Layer) First, a semiconductor wafer (silicon mirror wafer, thickness 750 μm, outer diameter 12 inches) W was prepared, and a commercially available backgrind tape was attached to one surface. Next, a stealth dicing laser saw (equipment name: DFL7361) manufactured by DISCO Co., Ltd. was used to cut the semiconductor wafer W from the side opposite to the side to which the backgrind tape was attached, until the size of the semiconductor chips 30a after cutting was 4. A modified region is formed at a predetermined depth position on the semiconductor wafer W by irradiating laser light along the lattice-shaped dicing lines under the following conditions so that the size is 7 mm x 7.2 mm. 30b was formed.

・Laser irradiation conditions (1) Laser oscillator type: semiconductor laser excitation Q-switch solid-state laser
(2) Wavelength: 1342nm
(3) Oscillation format: pulse
(4) Frequency: 90kHz
(5) Output: 1.7W
(6) Moving speed of semiconductor wafer mounting table: 700 mm/sec

Next, using a back grinding device (device name: DGP8761) manufactured by DISCO Co., Ltd., the semiconductor wafer W having a thickness of 750 μm and having the modified region 30b held on the back grinding tape is ground and thinned. As a result, semiconductor chips 30a having a thickness of 30 μm were obtained. Subsequently, the cutability of the die bond film (adhesive layer) was evaluated by performing a cool expand process using the following method. Specifically, the surface of the semiconductor chip 30a having a thickness of 30 μm opposite to the side to which the back grinding tape was attached was exposed by peeling off the release liner from the dicing die bond film 20 produced in each example and comparative example. The dicing die bond film 20 is laminated onto the semiconductor chip 30a using a laminating device manufactured by DISCO Co., Ltd. (device name: DFM2800) so that the die bond film 3 is in close contact with the semiconductor chip 30a at a lamination temperature of 70° C. and a lamination speed of 10 mm/sec. At the same time, a ring frame (wafer ring) 40 was attached to the exposed portion of the adhesive layer 2 at the outer edge of the dicing tape 10, and then the back grind tape was peeled off. Here, the dicing die-bonding film 20 is arranged in the MD direction of the base film 1 and in the vertical line direction of the lattice-like dividing line of the semiconductor chip 30a (TD direction of the base film 1 and the lattice-like dividing line of the semiconductor chip 30a). It is attached to the semiconductor chip 30a so that the horizontal line direction of the lines coincides with each other.

A laminate (semiconductor wafer 30/die bond film 3/adhesive layer 2/base film 1) containing the semiconductor chip 30a held on the ring frame (wafer ring) 40 is expanded using an expanding device manufactured by DISCO Co., Ltd. (device name: DDS2300 Fully Automatic Die Separator). Next, the die bond film 3 was cut by cool expanding the dicing tape 10 (adhesive layer 2/base film 1) of the dicing die bond film 20 with the semiconductor chip 30a under the following conditions. Thereby, a semiconductor chip 30a with a die bond film (adhesive layer) 3 was obtained. In this example, the cool expansion process was carried out under the following conditions, but the expansion conditions ("expanding speed", "expanding amount", etc.) were adjusted as appropriate depending on the physical properties of the base film 1, temperature conditions, etc. A cool expansion process may be performed.

・Cool expansion process conditions Temperature: -15℃, Cooling time: 80 seconds,
Expanding speed: 300mm/sec,
Expand amount: 11mm,
(4) Standby time: 0 seconds

The cool-expanded die-bonding film (adhesive layer) 3 was observed from the surface side of the semiconductor chip 30a using an optical microscope (model: VHX-1000) manufactured by Keyence Corporation at a magnification of 200 times, and was then cut. I confirmed the gender. The number of sides that were not cut among the sides that were scheduled to be cut was counted. Then, from the total number of sides scheduled to be cut and the total number of uncut sides, the ratio of the number of cut sides to the total number of sides scheduled to be cut was calculated as a cutting rate (%). The observation using the optical microscope was performed on the entire surface of the die bond film 3. The breakability of the die-bonded film (adhesive layer) 3 was evaluated according to the following criteria, and an evaluation of B or higher was judged as having good breakability.

A: The fracture rate was 95% or more and 100% or less.
B: The fracture rate was 90% or more and less than 95%.
C: The fracture rate was 85% or more and less than 90%.
D: Fracture rate was less than 85%.

5.2 Evaluation of the degree of loosening of the dicing tape 10 after the heat shrink process After releasing the cool expand state, the expander (equipment name: DDS2300 Fully Automatic Die Separator) manufactured by DISCO Co., Ltd. was used again. A room temperature expansion process was carried out using a heat expander unit under the following conditions.

・Condition temperature of room temperature expansion process: 23℃,
Expanding speed: 30mm/sec,
Expand amount: 9mm,
(4) Waiting time: 15 seconds

Next, while maintaining the expanded state, the dicing tape 10 was suctioned by a suction table, and the suction table was lowered together with the workpiece while maintaining the suction by the suction table. Then, a heat shrink process was performed under the following three conditions to heat shrink the circumferential portion of the dicing tape 10 outside the semiconductor chip 30a holding area. The surface temperature of the heated portion of the dicing tape 10 was 80°C.

・Conditions for heat shrink process [Condition 1]
(1) Hot air temperature: 200℃,
(2) Air volume: 40L/min,
(3) Distance between hot air outlet and dicing tape 10: 20 mm,
(4) Stage rotation speed: 7°/sec,

[Condition 2]
(1) Hot air temperature: 200℃,
(2) Air volume: 40L/min,
(3) Distance between hot air outlet and dicing tape 10: 20 mm,
(4) Stage rotation speed: 8°/sec,

[Condition 3]
(1) Hot air temperature: 200℃,
(2) Air volume: 40L/min,
(3) Distance between hot air outlet and dicing tape 10: 20 mm,
(4) Stage rotation speed: 9°/sec,

Subsequently, after releasing the dicing tape 10 from suction by the suction table, the workpiece is removed from the expanding device, placed on a flat rubber mat, and the semiconductor chip 30a holding area of the dicing tape 10 after heat shrinking is removed. The degree of elimination of slack in the outer circumferential portion was visually confirmed under a three-wavelength fluorescent lamp. The degree of elimination of slack for each of the dicing tapes 10 was evaluated according to the following criteria, and evaluations of B or higher were determined to indicate that the heat shrinkability was uniform and good.

A: No slack was observed.
B: Wrinkle-like loosening was observed in a small portion, but it was slight.
C: Wrinkle-like loosening or deformed wrinkles were clearly observed.

5.3 Evaluation of retention of kerf width of dicing tape 10 After the heat shrink process described above, the workpiece is removed from the expanding device, and the distance between adjacent semiconductor chips 30a (kerf width) is determined from the front surface side of the semiconductor wafer 30. The retention of the kerf width of the dicing tape 10 was evaluated by observing and measuring at a magnification of 200 times using an optical microscope (model: VHX-1000) manufactured by Keyence Corporation.

Specifically, four locations (MD direction of base film 1: kerf MD1 and kerf 7 of two cutting cross line parts formed by six adjacent semiconductor chips 30a in the left part 32 (two places in MD2, two places in TD direction of base film 1: kerf TD1 and kerf TD2, see FIG. 12), (MD direction: three locations from calf MD3 to calf MD5, TD direction: four locations from calf TD3 to calf TD6, not shown), two cutting crosses formed by six adjacent semiconductor chips 30a in the right portion 33 Seven places in the line part (MD direction: three places from calf MD6 to calf MD8, TD direction: four places from calf TD7 to calf TD10, not shown), and two parts formed by six adjacent semiconductor chips 30a in the upper part 34. At seven cutting cross line parts (MD direction: four places from calf MD9 to calf MD12, TD direction: three places from calf TD11 to calf TD13, not shown), and six adjacent semiconductor chips 30a in the lower part 35. Two cutting cross lines are formed at 7 locations (MD direction: 4 locations from calf MD13 to calf MD16, TD direction: 3 locations from calf TD14 to calf TD16, not shown), a total of 32 locations (16 locations in MD direction). 16 locations in the TD direction), the distance between adjacent semiconductor chips 30a is measured, and the average value of the 16 locations in the MD direction is defined as the MD direction kerf width, and the average value of the 16 locations in the TD direction is defined as the TD direction kerf width. Calculated. The retention of the kerf width of the dicing tape 10 in the dicing die-bonding film 20 was evaluated according to the following criteria, and an evaluation of B or higher was judged as having good retention of the kerf width.

A: Both the MD direction kerf width and TD direction kerf width were 30 μm or more.
B: The value of the kerf width in the MD direction is 30 μm or more and the value of the kerf width in the TD direction is 25 μm or more and less than 30 μm, or the value of the kerf width in the TD direction is 30 μm or more and the value of the kerf width in the MD direction is 25 μm or more and less than 30 μm. Or, both the MD direction kerf width and the TD direction kerf width were 25 μm or more and less than 30 μm.
C: Either the MD direction kerf width or the TD direction kerf width was less than 25 μm.

5.5 Evaluation Results For each of the dicing tapes 10 produced in Examples 1 to 18 and Comparative Examples 1 to 6, the above mounting evaluation was performed in the form of dicing die bond films 20 (DDF(a) to DDF(x)). The results are shown in Tables 1 to 7, together with the configurations of the dicing tape 10 and dicing die bond film 20, and the properties of the base film 1 and adhesive layer 2 used.

As shown in Tables 1 to 5, the dicing die bond films 20 (DDF(a) ～DDF(r)) has good breakability of the die-bond film 20 in the cool expansion process, suppresses the narrowing of the kerf width immediately after expansion at room temperature, and allows hot air to be cut in the heat shrink process after expansion at room temperature. Even when the rotation speed of the stage is increased during blowing to shorten the takt time, it is possible to uniformly heat and shrink the slack portions of the dicing tape 10, and the adjacent die bond films (adhesive layers) can be bonded together. It was confirmed that the kerf width widened during expansion was maintained to the extent that it was possible to suppress re-adhesion due to contact and damage to the edges of the semiconductor chip. Therefore, when the dicing tape 10 of the present invention is used in a semiconductor manufacturing process for manufacturing semiconductor chips and semiconductor devices with die bond films, they can be manufactured with high yield.

On the other hand, as shown in Tables 6 and 7, Comparative Examples 1 to 6 were prepared using dicing tapes 10 that did not satisfy at least one of the physical property values of the base film 1 and the thermal resistance requirements of the adhesive layer 2. Regarding the dicing die bond films 20 (DDF(s) to DDF(x)), evaluation was made of the breakability of the die bond film 3 in the cool expand process, the degree of loosening of the dicing tape 10 in the heat shrink process, and the retention of the kerf width. It was confirmed that the results were inferior to the dicing die bond films 20 (DDF(a) to DDF(r)) of Examples 1 to 18 in any of the following items.

1...Base film,
2...adhesive layer,
3, 3a1, 3a2...die bond film (adhesive layer),
4...Semiconductor chip mounting support substrate,
5...External connection terminal,
6...terminal,
10...Dicing tape,
20...Dicing die bond film,
W, 30... semiconductor wafer,
30a, 30a1, 30a2...semiconductor chip,
30b... Modified region (broken region in FIGS. 7(c) to (f), FIGS. 8(a) and (b)),
31...center of semiconductor wafer,
32...Semiconductor wafer left side,
33...Semiconductor wafer right side,
34...Semiconductor wafer upper part,
35...lower part of semiconductor wafer,
40...Ring frame (wafer ring),
41... Holder,
50...Adsorption collet,
60... Push-up pin (needle),
70, 80... semiconductor device,
71, 81...Semiconductor chip mounting support substrate 72...External connection terminal,
73...terminal,
74, 84... wire,
75, 85... Sealing material,
76...Support member

The present invention relates to a dicing tape that can be used in the manufacturing process of semiconductor devices.

In the manufacture of semiconductor devices, a dicing tape or a dicing die bond film in which the dicing tape and a die bond film are integrated is used.

A dicing tape has a structure in which an adhesive layer is provided on a base film, and is used to fix and hold semiconductor chips cut into individual pieces by dicing during dicing of a semiconductor wafer so that they do not scatter. The individualized semiconductor chips are then peeled off from the adhesive layer of the dicing tape and fixed to an adherend such as a lead frame, wiring board, or another semiconductor chip via a separately prepared adhesive or adhesive film. be done.

A dicing die bond film is a film in which a die bond film (hereinafter sometimes referred to as an "adhesive layer") is removably provided on an adhesive layer of a dicing tape. In manufacturing semiconductor devices, a semiconductor wafer is bonded onto a die bond film of a dicing die bond film. The semiconductor wafer and die bond film are then divided, peeled off (picked up) from the adhesive layer of the dicing tape, and fixed to an adherend such as a lead frame, wiring board, or another semiconductor chip via the die bond film. .

Conventionally, a full-cut cutting method using a dicing blade rotating at high speed has been used as a method for dividing semiconductor wafers. However, in recent years, as semiconductor wafers have become thinner, a method called SDBG (Stealth Dicing Before Griding) has been used to prevent chipping during cutting.

In this method, for example, first, a laser beam is irradiated onto the planned dicing line of a semiconductor wafer to form a modified region at a predetermined depth from the surface of the semiconductor wafer without completely cutting the semiconductor wafer, and then , by performing backside grinding while adjusting the amount of grinding appropriately, the semiconductor chips are separated into a plurality of semiconductor chips. Thereafter, the diced semiconductor chips are attached to a dicing die bond film, and the dicing tape is expanded at a low temperature (for example, -30°C to 0°C) (hereinafter sometimes referred to as "cool expansion"). The die bond film, which has been made brittle at low temperatures, is cut into pieces according to the shape of individual semiconductor chips. Next, the dicing tape is expanded at around room temperature (hereinafter sometimes referred to as "normal temperature expansion") to widen the interval between adjacent semiconductor chips with die bond films (hereinafter sometimes referred to as "kerf width"), Finally, a semiconductor chip with a die-bonding film can be obtained by peeling it off from the adhesive layer of the dicing tape using a pickup.

However, in the SDBG method, depending on the performance of the dicing tape used, as the amount of expansion in the room temperature expansion process increases, the portion of the dicing tape pushed up by the expand ring may expand, causing the expansion table to lower after room temperature expansion. When the expanded state is released, slack will occur in that part, and if the slack is left untreated, the gap (kerf width) between adjacent semiconductor chips with die-bond films will narrow or become uneven, causing A problem sometimes arises in that the kerf width immediately after expansion cannot be maintained sufficiently. If the kerf width is not maintained sufficiently, it may not be possible to properly pick up the semiconductor chip with the die bond film from the adhesive layer of the dicing tape in the later pick-up process. Damage caused by inter-chip contact or re-adhesion caused by contact between adhesive layers may occur in semiconductor chips, which may reduce the pickup yield.

Therefore, as a method to solve the above problem, the die bond film (adhesive layer) is broken by expanding, and after releasing the expanded state, the slack part of the dicing tape is contracted by heating, and the adjacent semiconductor with die bond film is Methods for maintaining the interval (kerf width) between chips have been proposed (for example, Patent Documents 1 to 3).

Patent Document 1 discloses a die bond film, a laminated portion disposed on the die bond film, and a laminated portion for the purpose of providing a dicing tape that can remove slack in the dicing tape and prevent contact between semiconductor chips. Disclosed is a dicing die-bonding film comprising a dicing tape having a peripheral portion disposed around the periphery of the dicing tape, the shrinkage rate of the peripheral portion being 0.1% or more at 130° C. to 160° C.

Furthermore, in Patent Document 2, for the purpose of providing a dicing sheet that can remove slack and prevent contact between semiconductor elements, the dicing sheet is shrunk by heating at 100°C for 1 minute, and is shrunk in the MD direction before heating. A dicing sheet is disclosed in which the second length in the MD direction after heating is 95% or less with respect to the first length of 100%.

Furthermore, Patent Document 3 discloses a tape for semiconductor processing that has a low thermal shrinkage rate and shrinks uniformly regardless of the direction of the tape, so that the kerf width expands uniformly without wrinkles or shifting of the chip position. The tape has a heat shrinkage ratio of 0% to 20% in both the longitudinal and width directions when heated at 100°C for 10 seconds, and Disclosed is a tape for semiconductor processing characterized in that when any one of the ratios is 0.1% or more, the heat shrinkage ratio in the longitudinal direction/the heat shrinkage ratio in the width direction is 0.01 or more and 100 or less. .

Japanese Patent Application Publication No. 2015-211081 Japanese Patent Application Publication No. 2016-115775 International Publication No. 2016/152957

By the way, as a method for removing the slack of the dicing tape caused by room-temperature expansion by heat shrinkage (hereinafter sometimes referred to as "heat shrink"), a plurality of cut semiconductor chips (dies) with die-bonding films are generally used. There is a method of heating and shrinking a dicing tape that has become slack in its outer part than the pasted area by applying hot air from the adhesive layer side of the dicing tape by rotating a pair of hot air blowing nozzles. used. By using this heat shrink process, the area inside the outside part of the dicing tape (the area where a plurality of cut semiconductor chips (dies) with die-bonding films are attached) is placed under tension where a predetermined amount of tension is applied. As a result, the spacing (kerf width) between the individual die-bonding film-attached semiconductor chips that was formed and secured when expanded at room temperature can be maintained. Then, in the subsequent pick-up process, each semiconductor chip with a die bond film can be peeled off from the adhesive layer of the dicing tape without mutual interference with adjacent semiconductor chips, and semiconductor chips with a die bond film can be obtained with a high yield. Can be done.

The dicing tape described in Patent Document 1 has a shrinkage rate of 0.1% or more at 130°C to 160°C. requires relatively high heating temperatures and long heating times. Therefore, hot air from a heated dryer or the like affects the die bond film (adhesive layer) near the outer periphery of the semiconductor wafer, and a part of the die bond film melts, causing the adjacent die bond film ( Contact between the adhesive layers (adhesive layers) may cause re-adhesion, damage to the edge of the semiconductor chip, etc., and there is a risk that the pick-up yield of the semiconductor chip with the die-bonding film may be reduced.

In addition, the dicing sheet described in Patent Document 2 shrinks by heating at 100° C. for 1 minute, and the second length in the MD direction after heating is 100% of the first length in the MD direction before heating. The ratio is below 95%. Furthermore, in the tape for semiconductor processing described in Patent Document 3, the thermal contraction rate in both the longitudinal direction and the width direction of the tape when heated at 100° C. for 10 seconds is 0% or more and 20% or less. . However, when the hot air blowing nozzle circulates around and heats the dicing sheet or semiconductor processing tape, the temperature near the surface of the dicing sheet or semiconductor processing tape gradually increases. The problem is that it takes time to remove. In addition, there were cases in which the retention of the kerf width was not sufficient.

Therefore, in order to manufacture a semiconductor chip with a die-bonding film with a high yield, the present invention suppresses the narrowing of the kerf width immediately after room temperature expansion, and the heat shrink process after room temperature expansion can be completed in a shorter time than before. It also enables uniform heat shrinkage and maintains a sufficient kerf width to prevent adjoining die bond films (adhesive layers) from coming into contact with each other and re-adhering, and from damaging the edges of the semiconductor chip. The purpose is to provide a dicing tape that can Another object of the present invention is to provide a method for manufacturing semiconductor chips and semiconductor devices using the dicing tape.

Embodiments of the invention are described below.
[Form 1]
A dicing tape comprising a base film and an adhesive layer containing an active energy ray-curable adhesive composition on the base film,
The base film has, in the MD direction,
(1) Tensile strength at 100% stretching at 23°C of 9 MPa or more and 18 MPa or less,
(2) Stress relaxation rate (%) after 100% stretching of 50% or more and holding for 100 seconds = [(AB)/A)] x 100 (1)
(In the formula, A is the tensile load when the base film is stretched 100% at 23°C, and B is the tensile load after the base film is stretched 100% at 23°C and held in that state for 100 seconds. (This is a tensile load.)
Stress relaxation rate after 100% stretching and holding for 100 seconds at 23°C, expressed by (3) 20% or more, heat shrinkage rate after 100% stretching and holding for 100 seconds (%) = [(C-D )/C]×100 (2)
(In the formula, C is the interval between the marked lines when the base film with marked lines attached at predetermined intervals is stretched 100% at 23°C and held in that state for 100 seconds, and D is the interval between the marked lines, A base film with marking lines attached at predetermined intervals is stretched 100% at 23°C, held in that state for 100 seconds, and then heated in a tension-free state at 80°C for 60 seconds to shrink it. (This is the interval between the marked lines after
Heat shrinkage rate after 100% stretching and holding for 100 seconds at 80°C, expressed as
has
The adhesive layer is
A dicing tape having a thermal resistance of 0.45K·cm ² /W or less.

[Form 2]
The base film is a resin composed of a resin composition containing a thermoplastic crosslinked resin (IO) made of an ionomer of an ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid ester copolymer and a polyamide resin (PA). The dicing tape according to Form 1, which is a film.

[Form 3]
The dicing tape according to Form 1 or 2, wherein the adhesive layer has a thermal resistance of 0.35 K·cm ² /W or less.

[Form 4]
The adhesive layer is
(1) An adhesive composition comprising an acrylic adhesive polymer having a photosensitive carbon-carbon double bond and a functional group, a photopolymerization initiator, and a crosslinking agent that reacts with the functional group;
(2) an adhesive composition further comprising a thermally conductive filler in the adhesive composition of (1);
(3) an adhesive composition comprising an acrylic adhesive polymer having a functional group, an active energy ray-curable compound, a photopolymerization initiator, and a crosslinking agent that reacts with the functional group;
(4) an adhesive composition further comprising a thermally conductive filler in the adhesive composition of (3);
The dicing tape according to any one of Forms 1 to 3, which contains any one active energy ray-curable adhesive composition selected from the group consisting of:

[Form 5]
A method for manufacturing a semiconductor chip and a semiconductor device, using a dicing tape of any one of Forms 1 to 4.

According to the present invention, it is possible to suppress narrowing of the kerf width immediately after room temperature expansion, and to heat-shrink the dicing tape sufficiently and uniformly in a shorter time than before in the heat shrink process after room temperature expansion. Therefore, the widened kerf width can be sufficiently maintained to the extent that it is possible to prevent adjacent die bond films (adhesive layers) from coming into contact with each other and re-adhering, and from damaging the edges of the semiconductor chip. As a result, a dicing tape with excellent pick-up properties for semiconductor chips with a die-bonding film is provided.

1 is a cross-sectional view showing an example of the structure of a base film of a dicing tape to which this embodiment is applied. FIG. 1 is a cross-sectional view showing an example of the configuration of a dicing tape to which this embodiment is applied. 1 is a cross-sectional view showing an example of a dicing die-bonding film having a configuration in which a dicing tape to which the present embodiment is applied is bonded to a die-bonding film. It is a flow chart explaining a manufacturing method of a dicing tape. It is a flowchart explaining the manufacturing method of a semiconductor chip. FIG. 2 is a perspective view showing a state in which a ring frame (wafer ring) is attached to the outer edge of a dicing die bond film, and a semiconductor wafer separated into pieces is attached to the center of the die bond film. (a) to (f) are cross sections showing an example of the process of grinding a semiconductor wafer in which a plurality of modified regions have been formed by laser beam irradiation and the process of bonding a plurality of cut semiconductor wafers to a dicing die bond film. It is a diagram. (a) to (f) are cross-sectional views showing an example of manufacturing a semiconductor chip using a plurality of cut thin film semiconductor wafers to which dicing die-bonding films are bonded. FIG. 2 is a schematic cross-sectional view of one embodiment of a semiconductor device having a stacked structure using a semiconductor chip manufactured using a dicing die-bonding film in which a dicing tape to which the present embodiment is applied is bonded to a die-bonding film. FIG. 7 is a schematic cross-sectional view of another embodiment of a semiconductor device using a semiconductor chip manufactured using a dicing die-bonding film in which a dicing tape to which the present embodiment is applied is bonded to a die-bonding film . FIG. 3 is a plan view for explaining a method of measuring the distance between semiconductor chips (kerf width) after expansion. 12 is an enlarged plan view of the center of the semiconductor wafer in FIG. 11. FIG.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings as necessary. However, the present invention is not limited to the following embodiments.

<Configuration of dicing tape and dicing die bond film>
FIGS. 1A to 1D are cross-sectional views showing an example of the structure of a base film 1 of a dicing tape to which this embodiment is applied. The base film 1 of the dicing tape of the present embodiment may be a single layer of a single resin composition (see (a) 1-A in FIG. 1), or may be composed of multiple layers of the same resin composition. It may be a laminate (see (b) 1-B in FIG. 1), or a laminate consisting of multiple layers of different resin compositions (see (c) 1-C and (d) 1-D in FIG. 1). ). In the case of a laminate consisting of multiple layers, the number of layers is not particularly limited, but is preferably in the range of 2 to 5 layers.

FIG. 2 is a cross-sectional view showing an example of the configuration of a dicing tape to which this embodiment is applied. As shown in FIG. 2, the dicing tape 10 has a configuration in which an adhesive layer 2 is provided on the first surface of a base film 1. Although not shown, the surface of the adhesive layer 2 of the dicing tape 10 (the surface opposite to the surface facing the base film 1) is provided with a base sheet (release liner) having releasability. You can leave it there.

The base film 1 has, in the MD direction, (1) tensile strength at 100% stretching at 23°C in the range of 9 MPa or more and 18 MPa or less, (2) stress after 100% stretching at 23°C of 50% or more and holding for 100 seconds. and (3) a heat shrinkage rate after 100% stretching and holding for 100 seconds at 80° C. of 20% or more.

In this specification, "MD (Machine Direction) direction" means the flow (length) direction during film formation of the base film 1.

Moreover, "100% stretching" in the present invention means stretching the base film 1 until it becomes twice the length before stretching. Specifically, for example, using a tensile compression testing machine, both ends of the test piece of the base film 1 in the longitudinal (MD) direction are fixed with chucks so that the initial distance between the chucks is 50 mm, and the distance between the chucks is This means pulling and stretching the test piece of the base film 1 until it reaches 100 mm.

Furthermore, in the present invention, the "stress relaxation rate after 100% stretching and holding for 100 seconds" refers to the tensile load (stress) value at the time of 100% stretching with respect to the tensile load (stress) value at the time when the base film 1 was stretched 100% at a temperature condition of 23 ° C. It is the rate of decrease from the tensile load (stress) value after holding the state with 100% stretching strain for 100 seconds. That is, in the MD direction of the base film 1, the tensile load (stress) value when stretched 100% at a temperature condition of 23 ° C. is A, and the tensile load (stress) value when stretched 100% at a temperature condition of 23 ° C., and the 100% stretching strain is When the tensile load (stress) value after holding the given state for 100 seconds is B, the following formula

Stress relaxation rate (%) after 100% stretching and holding for 100 seconds = [(AB)/A] x 100

Refers to the value calculated from. The direction in which the base film 1 is stretched is the MD direction, and the stress relaxation rate of the base film 1 after being stretched at 100% and held for 100 seconds at 23° C. may be 50% or more. In addition, in this specification, the above-mentioned "stress relaxation rate after 100% stretching and holding for 100 seconds at 23°C" may be simply referred to as "stress relaxation rate."

Furthermore, in the present invention, "heat shrinkage rate after 100% stretching and holding for 100 seconds" refers to the base film 1 that has been stretched 100% at 23°C and held for 100 seconds with the 100% stretching strain applied. , is the ratio of the length of the substrate film 1 contracted by heating to a certain length of the base film 1 before heating when heated at 80° C. in a tension-free state. That is, in the MD direction of the base film 1, the base film 1 on which two marked lines are attached at a predetermined interval is stretched 100% at 23°C, and the 100% stretching strain is maintained for 100 seconds. The interval between the marked lines when held is C, and the base film 1 with two marked lines attached at a predetermined interval is stretched 100% at 23°C, and the 100% stretching strain is maintained at 100%. After holding for seconds, heating in a tension-free state at 80°C for 60 seconds to shrink, when the interval between the marked lines is D, the following formula

Heat shrinkage rate (%) after 100% stretching and holding for 100 seconds = [(CD)/C] x 100

Refers to the value calculated from. The direction in which the base film 1 is stretched is the MD direction, and the heat shrinkage rate of the base film 1 after being stretched for 100 seconds at 80° C. may be 20% or more. In addition, in this specification, the above-mentioned "heat shrinkage rate after 100% stretching and holding for 100 seconds at 80°C" may be simply referred to as "heat shrinkage rate."

The dicing tape 10 of the present invention includes an adhesive layer 2 containing an active energy ray-curable adhesive composition on the ^base film 1. It has the following thermal resistance:
The adhesive layer 2 containing the active energy ray-curable adhesive composition has a property that, for example, when irradiated with active energy rays such as ultraviolet rays (UV), the adhesive layer 2 hardens and shrinks, reducing its adhesive strength to the adherend. has.

The "thermal resistance" of the adhesive layer 2 in the present invention refers to an adhesive layer laminated such that the thickness of the adhesive layer 2 of the dicing tape 10 is L (μm) and the total thickness of the adhesive layer 2 is 1 mm. A laminate consisting of only layers was prepared, and the thermal conductivity of the laminate was measured by the hot wire method using a quick thermal conductivity meter "QTM-500 (model)" manufactured by Kyoto Electronics Co., Ltd. /m・K), the following formula

Thermal resistance (K cm ² /W) = (L/100)/λ

Refers to the value calculated from. The smaller the value of the thermal resistance of the adhesive layer 2, the better the thermal conductivity of the adhesive layer 2. That is, as described above, in the heat shrinking process of the dicing tape 10, a method is used in which hot air is applied to the adhesive layer 2 side of the dicing tape 10 where the slack has occurred to heat and shrink the adhesive layer 2. The smaller the thermal resistance value, the more efficiently the applied heat can be transferred from the adhesive layer 2 to the base film 1, so the base film 1 can be uniformly and sufficiently heated in a short time. Convenient for shrinking.

The dicing tape 10 having such a configuration is used in the semiconductor manufacturing process, for example, as follows. A plurality of pieces are formed on the adhesive layer 2 of the dicing tape 10 by back-grinding a semiconductor wafer on which dividing grooves are formed on the surface using a blade or a semiconductor wafer on which a modified layer is formed inside using a laser. The diced semiconductor chips are pasted and held (temporarily fixed) via a die bond film (adhesive layer), and the die bond film is cut into pieces according to the shape of each chip by cool expansion. , the kerf width between the semiconductor chips is sufficiently expanded through room temperature expansion and heat shrinking processes, and in the subsequent pick-up process, a jig is pushed up from the bottom side of the dicing tape to remove each semiconductor chip with a die bond film onto the dicing tape 10. The adhesive layer 2 is peeled off. The obtained semiconductor chip with a die bond film is fixed to an adherend such as a lead frame, a wiring board, or another semiconductor chip using the die bond film.

FIG. 3 is a cross-sectional view showing an example of a so-called dicing die bond film, which is a structure in which the dicing tape 10 to which this embodiment is applied is bonded and integrated with the die bond film (adhesive layer) 3. As shown in FIG. 3, the dicing die bond film 20 has a structure in which a die bond film (adhesive layer) 3 is releasably adhered and laminated on the adhesive layer 2 of the dicing tape 10.

The dicing die bond film 20 having such a configuration is used in the semiconductor manufacturing process, for example, as follows. On the die bond film 3 of the dicing die bond film 20, a plurality of wafers are obtained by back grinding a semiconductor wafer with dividing grooves formed on the surface by a blade or a semiconductor wafer with a modified layer formed inside by a laser. The diced semiconductor chips are pasted and held (glued), and the die bond film 3, which has been made brittle at low temperatures by cool expansion, is cut according to the shape of the individual diced semiconductor chips, and the die bond film 3 is cut into pieces according to the shape of the individual semiconductor chips. Obtain a semiconductor chip. Next, after the kerf width between the die-bonding film-attached semiconductor chips is sufficiently expanded by room-temperature expansion and heat-shrinking steps, the individual die-bonding film-attached semiconductor chips are peeled off from the adhesive layer 2 of the dicing tape 10 by a pickup step. The obtained semiconductor chip with the die bond film (adhesive film) 3 is fixed to an adherend such as a lead frame, a wiring board, or another semiconductor chip via the die bond film (adhesive film) 3. Although not shown, the surface of the adhesive layer 2 of the dicing tape 10 (the surface opposite to the surface facing the base film 1) and the surface of the die bonding film 3 (the surface facing the adhesive layer 2) The opposite surface) may be provided with a base sheet (release liner) having releasability, and may be peeled off as appropriate during use.

<Dicing tape>
(Base film)
The base film 1 having the first constituent feature in the dicing tape 10 of the present invention will be described below.

[Tensile strength of base film]
The base film 1 has a tensile strength at 100% stretching at 23° C. in a range of 9 MPa or more and 18 MPa or less.

If the tensile strength of the base film 1 at 100% stretching at 23° C. is less than 9 MPa, even if external stress is applied to the dicing tape 10 by expanding, it will not be sufficiently transmitted to the die bonding film 3. There is a possibility that the film 3 will not be cut properly. Furthermore, if the tensile strength is too low, there is a risk that the interval (kerf width) between individual semiconductor chips with die bond films cannot be sufficiently widened during the room temperature expansion process, and the dicing tape 10 becomes soft and difficult to handle. may become difficult.

When the tensile strength of the base film 1 at 100% stretching at 23° C. exceeds 18 MPa, if the tensile strength is too large, it may be difficult to expand the dicing tape 10. Furthermore, the rigidity of the base film 1 may increase, leading to poor pick-up properties.

The dicing tape 10 has good expandability because the tensile strength of the base film 1 at 100% stretching at 23° C. is in the range of 9 MPa or more and 18 MPa or less. That is, in the cool expansion step, sufficient external stress is applied to the die bond film 3 to break the die bond film 3 that is in close contact with the adhesive layer 2 containing the active energy ray curable adhesive composition described below. In addition, in the room temperature expansion process, the interval (kerf width) between individual semiconductor chips with die bond films can be sufficiently widened during expansion. From the viewpoint of expandability, the tensile strength of the base film 1 at 100% stretching at 23° C. is more preferably in the range of 11 MPa or more and 16 MPa or less.

[Stress relaxation rate of base film]
The base film 1 has a tensile strength of 9 MPa or more and 18 MPa or less at 100% stretching at 23°C, and a stress relaxation rate of 50% or more after 100% stretching and holding for 100 seconds at 23°C. There is. As a result, the stress generated in the base film 1 when the dicing tape 10 is expanded at room temperature is quickly reduced to a sufficiently low value. In the part of the dicing tape only (the part where there is no semiconductor chip with die bond film) that corresponds to the interval (kerf width) between individual semiconductor chips with die bond film, when the expanded state is released, the force that tends to shrink due to elasticity is Reduced, alleviated. As a result, even if the expanded state is canceled when moving to the next process or during storage, the kerf width will shrink slightly, but it will not shrink excessively from the original spacing, and it will hold relatively well. easy to be Further, it is easy to prevent the adhesive layers attached to the chips from coming into contact with each other. From the viewpoint of kerf width retention, the stress relaxation rate after 100 seconds of 100% stretching of the base film 1 is preferably 55% or more.

Regarding the upper limit of the stress relaxation rate after 100 seconds of 100% stretching of the base film 1, the base film 1 has appropriate rigidity and is a die bond film for stably dicing a plurality of singulated semiconductor chips. From the viewpoint of making it possible to laminate the film by pasting it on the film 20, and from the viewpoint of ensuring a certain restoring force against tension (stretching) when heated, it is preferably 70%, and more preferably 65%.

[Heat shrinkage rate of base film]
Furthermore, the base film 1 has a heat shrinkage rate of 20% or more after 100% stretching and holding for 100 seconds at 80°C. As a result, when the dicing tape 10 is expanded at room temperature, hot air is blown against the slack that occurs outside the area where the plurality of cut semiconductor chips with die-bonding films are attached. It can be easily resolved and removed. As a result, the area inside the outer part of the dicing tape 10 (the area where a plurality of cut semiconductor chips (dies) with die-bonding films are attached) reaches a tension state where a predetermined tension is applied, so that the area is kept at room temperature. It is possible to maintain the spacing (kerf width) between individual semiconductor chips with die bond films that was formed and secured when expanded.

The upper limit of the heat shrinkage rate of the base film 1 after 100% stretching at 80°C and holding for 100 seconds is determined to be 35 %, more preferably 30%.

[Resin composition constituting the base film]
The material and form of the base film 1 are not particularly limited as long as they simultaneously satisfy the above properties, that is, tensile strength, stress relaxation rate, and heat shrinkage rate, but as a preferred embodiment, specifically, For example, a thermoplastic crosslinked resin (IO) made of an ionomer of ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer (hereinafter sometimes simply referred to as "resin made of ionomer" or "ionomer") Examples include a resin film composed of a resin composition containing a polyamide resin (PA) and a polyamide resin (PA). The thermoplastic crosslinked resin (IO) made of the ionomer of the ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer has at least a portion of the carboxyl groups of the unsaturated carboxylic acid as a metal (ion). Compared to polyamide resin (PA), which is a non-crosslinked thermoplastic resin, when made into a resin film, it has a greater restoring force when heated against stretching, and can be stretched by a room temperature expansion process. When heat is applied to this state, entropic elasticity acts strongly and the contraction stress becomes large. Therefore, after the room temperature expansion process, the slack generated in the dicing tape 10 outside the area where the plurality of cut semiconductor chips with die-bonding films are attached is removed by heat shrinkage, and the dicing tape 10 is expanded by the shrinkage stress. It is excellent in that the distance between the individual die-bonding film-attached semiconductor chips (kerf width) can be maintained stably by applying tension. On the other hand, at room temperature, the ionomer has an appropriate ease of plastic deformation, that is, an appropriate stress relaxation property, due to the portion without a network structure in the ionomer. Therefore, (1) after the cool expansion process, once the expanded state is released and the temperature is returned to room temperature, (2) immediately after the room temperature expansion process, (3) when proceeding to the subsequent pick-up process, mounting process, etc., or when storing Since the dicing tape 10 tends not to shrink easily over time, it is advantageous in that it can reduce the kerf width and prevent adhesive layers attached to semiconductor chips from coming into contact with each other. On the other hand, polyamide resin (PA), which is a non-crosslinked thermoplastic resin, has a lower restoring force against stretching when made into a resin film than an ionomer, which is a thermoplastic crosslinked resin, but has a high tensile strength. Become. Therefore, when mixed with a resin made of the above-mentioned ionomer to form a resin film, the external stress applied in the expanding process is well transmitted, and the breakability of the die bond film 3 and the expandability of the kerf width of the dicing tape 10 are further improved. It is excellent in that it allows Further, since it is possible to impart appropriate heat resistance while maintaining heat shrinkability, it is possible to prevent the dicing tape 10 from being thermally deformed more than necessary when heated in the heat shrink process. Therefore, it is possible to achieve a uniform tension state in which deformation such as heat wrinkles is reduced in the dicing tape 10 after heat shrinkage, and it is also excellent in that variations in kerf width can be suppressed.

As the material of the base film 1, a mixed resin containing a thermoplastic crosslinked resin (IO) consisting of an ionomer of an ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer and a polyamide resin (PA) was used. In this case, the physical properties of the base film 1 are such that it has a well-balanced heat shrinkability and stress relaxation property, and also has an appropriate tensile strength while maintaining both of these properties. A resin film formed using these resin compositions can be suitably used as the base film 1.

The total amount of the thermoplastic crosslinked resin (IO) consisting of an ionomer of ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer and polyamide resin (PA) in the entire base film 1 is As long as the tensile strength, stress relaxation rate, and thermal shrinkage rate of the base film 1 are within the above ranges, there is no particular limitation, but at least 65% by mass or more based on the total amount of the resin composition constituting the entire base film 1. It is preferable that the proportion is as follows. More preferably, it is 75% by mass, still more preferably 85% by mass, and particularly preferably 100% by mass, which is the upper limit of the ratio.

The dicing tape 10 using the base film 1 having such a structure can be used in a cool expand process or a room temperature expand process in the manufacturing process of semiconductor devices in a form in which the die bond film 3 is adhered onto the adhesive layer 2. It is suitable for That is, the cool expansion process is suitable for properly cleaving the die bond film according to the shape of each individual semiconductor chip that has already been diced, and obtaining semiconductor chips with individual die bond films 3 of a predetermined size at a high yield. . Furthermore, even in the room temperature expansion process, the stretchability necessary to ensure a sufficient kerf width between semiconductor chips is maintained.

[Thermoplastic crosslinked resin (IO) consisting of an ionomer of ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer]
In the base film 1 of this embodiment, the thermoplastic crosslinked resin (IO) made of an ionomer of ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer is ethylene/unsaturated carboxylic acid/unsaturated A part or all of the carboxyl groups of the carboxylic acid alkyl ester copolymer are neutralized with a metal (ion).

The ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer constituting the above ionomer is at least a ternary copolymer of ethylene, unsaturated carboxylic acid, and unsaturated carboxylic acid alkyl ester. It may also be a quaternary or higher copolymer copolymerized with a fourth copolymer component. The ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer may be used alone, or two or more ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymers may be used. may be used together.

Examples of the unsaturated carboxylic acids constituting the ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester terpolymer include acrylic acid, methacrylic acid, ethacrylic acid, itaconic acid, itaconic anhydride, and fumaric acid. , crotonic acid, maleic acid, maleic anhydride, and other unsaturated carboxylic acids having 4 to 8 carbon atoms. In particular, acrylic acid or methacrylic acid is preferred.

Examples of the unsaturated carboxylic acid alkyl ester constituting the ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester terpolymer include methyl acrylate, ethyl acrylate, isobutyl acrylate (acrylic acid 2- carbon in the alkyl moiety of methyl-propyl acrylate), n-butyl acrylate, isooctyl acrylate, methyl methacrylate, ethyl methacrylate, isobutyl methacrylate (2-methyl-propyl methacrylate), dimethyl maleate, diethyl maleate, etc. Examples include (meth)acrylic acid alkyl esters having a number of 1 to 12. Among these, (meth)acrylic acid alkyl esters having 1 to 4 carbon atoms in the alkyl moiety are preferred. From the viewpoint of uniform expandability including suppression of necking phenomenon during expansion of the dicing tape 10, especially ethyl acrylate, isobutyl acrylate (2-methyl-propyl acrylate), ethyl methacrylate, isobutyl methacrylate (methacrylate) 2-methyl-propyl acid) and the like are preferred.

When the ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester terpolymer is a quaternary or higher copolymer, the ethylene, unsaturated carboxylic acid, and unsaturated carboxylic acid constituting the terpolymer are In addition to the saturated carboxylic acid alkyl ester, a fourth copolymerization component forming a multicomponent copolymer may be included. The fourth copolymerization component includes unsaturated hydrocarbons (e.g., propylene, butene, 1,3-butadiene, pentene, 1,3-pentadiene, 1-hexene, etc.), vinyl esters (e.g., vinyl acetate, propionic acid, etc.). vinyl, etc.), oxides such as vinyl sulfuric acid and vinyl nitric acid, halogen compounds (eg, vinyl chloride, vinyl fluoride, etc.), vinyl group-containing primary, secondary amine compounds, carbon monoxide, sulfur dioxide, and the like.

The form of the above-mentioned ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer may be a block copolymer, a random copolymer, or a graft copolymer, and may be a terpolymer, Any quaternary copolymer may be used. Among these, ternary random copolymers and graft copolymers of ternary random copolymers are preferred, and ternary random copolymers are more preferred because they are industrially available.

Specific examples of the above-mentioned ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymers include ethylene/methacrylic acid/2-methyl-propyl acrylate copolymer, ethylene/methacrylic acid/ethyl methacrylate, etc. Examples include terpolymers. Furthermore, commercially available products such as ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymers may be used, such as the Nucrel series (registered trademark) manufactured by DuPont Mitsui Polychemicals Co., Ltd. can be used.

The copolymerization ratio (mass ratio) of the unsaturated carboxylic acid ester in the above-mentioned ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer is preferably in the range of 1% by mass to 20% by mass. From the viewpoint of stretchability in the expanding step and heat resistance (blocking, fusion), the content is more preferably in the range of 5% by mass to 15% by mass.

In the base film 1 of this embodiment, the ionomer used as the resin (IO) is such that the carboxyl groups contained in the ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer are mixed with metal ions in an arbitrary proportion. Preferably, those crosslinked (neutralized) with Examples of metal ions used to neutralize acid groups include metal ions such as lithium ions, sodium ions, potassium ions, rubidium ions, cesium ions, zinc ions, magnesium ions, and manganese ions. Among these metal ions, magnesium ions, sodium ions, and zinc ions are preferred, and sodium ions and zinc ions are more preferred from the viewpoint of easy availability of industrialized products.

The degree of neutralization of the ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer in the above ionomer is preferably in the range of 10 mol% or more and 85 mol% or less, and 15 mol% or more and 82 mol% or less. It is more preferable that it is in the range of . By setting the degree of neutralization to 10 mol% or more, the breakability of the semiconductor wafer with a die-bonding film can be further improved, and by setting the degree of neutralization to 85 mol% or less, the film formability of the film can be improved. Can be done. Note that the degree of neutralization is the blending ratio (mol %) of metal ions to the number of moles of acid groups, particularly carboxyl groups, possessed by the ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer.

The resin (IO) made of the above ionomer has a melting point of about 85 to 100°C, but the melt flow rate (MFR) of the resin (A) made of the ionomer is 0.2 g/10 minutes or more and 20.0 g/10 min. It is preferably in the range of 10 minutes or less, more preferably in the range of 0.5 g/10 minutes or more and 20.0 g/10 minutes or less, and in the range of 0.5 g/10 minutes or more and 18.0 g/10 minutes or less. It is more preferable that When the melt flow rate is within the above range, the film formability as the base film 1 will be good. Note that MFR is a value measured at 190° C. and a load of 2160 g by a method based on JIS K7210-1999.

The resin composition constituting the base film 1 of this embodiment includes, in addition to the thermoplastic crosslinked resin (IO) made of the above-mentioned ionomer of ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer. , further includes a polyamide resin (PA), which will be described later. In the base film 1, from the viewpoint of stably expressing the physical properties of tensile strength, stress relaxation rate, and heat shrinkage rate described above in a well-balanced manner, the above-mentioned ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer is used. The mass ratio (IO):(PA) of the thermoplastic crosslinked resin (IO) consisting of an ionomer and the polyamide resin (PA) is not particularly limited, but is preferably in the range of 72:28 to 95:5. More preferably, it is in the range of 74:26 to 92:8, and still more preferably in the range of 80:20 to 90:10. Note that the upper and lower limits of the numerical ranges in this specification can be arbitrarily selected and combined. The heat resistance of the base film 1 can be improved by configuring the base film 1 with a resin composition in which a resin (IO) made of an ionomer and a polyamide resin (PA) are mixed in the above range. In addition, it is possible to increase the tensile stress when stretched at low temperatures (for example, -15°C), and for the dicing tape 10 using the base film 1, die bond A good cutting force can be applied to separate the semiconductor wafer with the film 3 into pieces with a high yield, and furthermore, in the room-temperature expansion process, the film has good tensile strength, stretchability, and stress relaxation that can ensure a sufficient kerf width between semiconductor chips. In the heat shrinking process, it is possible to provide good heat shrinkability that can maintain the expanded kerf width.

[Polyamide resin (PA)]
Examples of the polyamide resin (PA) include carboxylic acids such as oxalic acid, adipic acid, sebacic acid, dodecanoic acid, terephthalic acid, isophthalic acid, and 1,4-cyclohexanedicarboxylic acid, and ethylenediamine, tetramethylenediamine, and pentamethylene. Diamines, polycondensates with diamines such as hexamethylene diamine, decamethylene diamine, 1,4-cyclohexyl diamine, m-xylylene diamine, cyclic lactam ring-opening polymers such as ε-caprolactam and ω-laurolactam, 6- Examples include polycondensates of aminocarboxylic acids such as aminocaproic acid, 9-aminononanoic acid, 11-aminoundecanoic acid, and 12-aminododecanoic acid, and copolymers of the above-mentioned cyclic lactams, dicarboxylic acids, and diamines.

A commercially available product can also be used as the polyamide resin (PA). Specifically, nylon 4 (melting point 268°C), nylon 6 (melting point 225°C), nylon 46 (melting point 240°C), nylon 66 (melting point 265°C), nylon 610 (melting point 222°C), nylon 612 (melting point 215°C). ), nylon 6T (melting point 260°C), nylon 11 (melting point 185°C), nylon 12 (melting point 175°C), copolymer nylon (e.g. nylon 6/66, nylon 6/12, nylon 6/610, nylon 66/12, nylon 6/66/610, etc.), nylon MXD6 (melting point: 237° C.), nylon 46, etc. Among these polyamides, nylon 6 and nylon 6/12 are preferred from the viewpoint of film formability and mechanical properties as the base film 1.

Although the content of the polyamide resin (PA) is not particularly limited, the thermoplastic crosslinked resin (IO ) and the polyamide resin (PA), the mass ratio (IO):(PA) is preferably in the range of 72:28 to 95:5. If the mass ratio of the polyamide resin (PA) is less than the above range, the effect of increasing the tensile strength of the base film 1 during expansion may be insufficient. On the other hand, if the mass ratio of the polyamide resin (PA) exceeds the above range, it may be difficult to form a stable film depending on the resin composition of the base film 1, or the heat shrinkability in the heat shrink process may be insufficient. There is a risk that In addition, there is a risk that the flexibility of the base film 1 may be impaired, making it impossible to maintain its stretchability in the room temperature expansion process, and when picking up a semiconductor chip with the die-bonding film 3 attached, there is a risk that pick-up failures may occur due to cracks in the semiconductor chip, etc. be. The content of the polyamide resin (PA) in the entire base film 1 is determined by the thermoplastic crosslinked resin (IO) made of the ionomer of the ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer and the polyamide resin. The mass ratio (IO):(PA) of (PA) is more preferably in the range of 74:26 to 92:8, and more preferably in the range of 80:20 to 90:10. More preferred.

In addition, when the base film 1 is a laminate consisting of multiple layers, a thermoplastic crosslinked resin (IO) consisting of an ionomer of the above-mentioned ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer and the above polyamide resin are used. (PA) means the mass ratio of thermoplastic crosslinked resin (IO) consisting of an ionomer of ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer to polyamide resin (PA) in each layer. and the mass ratio of each layer in the entire base film 1 (laminate).

[Other ingredients]
Other resins and various additives may be added to the resin composition constituting the base film 1 as necessary, as long as the effects of the present invention are not impaired. Examples of the other resins include polyolefins such as polyethylene and polypropylene, ethylene/unsaturated carboxylic acid copolymers, ethylene/unsaturated carboxylic acid alkyl ester copolymers, ethylene/α-olefin copolymers, etc. Examples include ethylene copolymers, polyolefin-polyether block copolymers, and polyetheresteramides. Such other resins include the thermoplastic crosslinked resin (IO) made of the ionomer of the ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer and the polyamide resin (PA) in a total of 100 parts by mass. On the other hand, it can be blended in a proportion of, for example, 20 parts by mass. In addition, examples of the above-mentioned additives include antistatic agents, antioxidants, heat stabilizers, light stabilizers, ultraviolet absorbers, pigments, dyes, lubricants, antiblocking agents, antifungal agents, antibacterial agents, flame retardants, Examples include flame retardant aids, crosslinking agents, crosslinking aids, foaming agents, foaming aids, inorganic fillers, and fiber reinforcing materials. These various additives are added to a total of 100 parts by mass of the thermoplastic crosslinked resin (IO) consisting of the ionomer of the ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer and the polyamide resin (PA). On the other hand, it can be blended in a proportion of, for example, 5 parts by mass.

[Vicat softening point of the resin composition constituting the base film]
When the base film 1 is composed of a single layer of a single resin composition or a laminate consisting of multiple layers of the same resin composition, the Vicat softening point of the resin composition is not particularly limited, but the heat shrinkage From the viewpoint of performance, the temperature is preferably in the range of 57°C or higher and lower than 80°C. Since the Vicat softening point of the resin composition of the base film 1 is within the above range, the base film 1 stretched during normal temperature expansion can have a surface temperature of, for example, a slack portion of about 80°C during the heat shrink process. When hot air is blown onto the material so that the temperature is 0.degree. As a result, it becomes easy to eliminate slack in the dicing tape 10 and maintain the kerf width. The Vicat softening point of the resin composition of the base film 1 is more preferably in the range of 60°C or more and 75°C or less, and still more preferably in the range of 61°C or more and 70°C or less. If the Vicat softening point of the resin composition of the base film 1 is less than 57° C., especially if the value is too low, blocking may occur during the base film formation or the dicing tape manufacture. In the heat shrink process, the resin is excessively softened and fluidized during heating, which may cause the dicing tape 10 to deform more than necessary. If the Vicat softening point of the resin material of the base film 1 is 80°C or higher, especially if the value is excessively high, the stretched base film 1 during room temperature expansion may have a lower surface temperature, for example, at a slack portion. When hot air is blown so that the temperature is approximately 80°C, the stretched and oriented molecules become difficult to return to their original state, and the slack in the dicing tape 10 is not fully eliminated, making it difficult to maintain the kerf width. It may become difficult. Note that the Vicat softening point of the resin composition of the base film 1 can be measured, for example, by a method based on JIS K7206.

When the base film 1 is constituted by a laminate consisting of multiple layers of different resin compositions, from the viewpoint of heat shrinkability, the Vicat softening point of any resin composition constituting each layer is 57°C or higher and 80°C. The mass of the layer composed of a resin composition having a Vicat softening point of 57°C or more and less than 80°C is preferably within a range of less than 80°C, with respect to the total amount of the resin composition constituting the entire base film 1. The Vicat softening point of the resin composition of the layer occupying the remaining 35% by mass or less may be lower than 57°C or higher than 80°C. For example, the Vicat softening point of the resin composition of the layer that accounts for the remaining 35% by mass or less may be in the range of 40°C or more and less than 57°C or 80°C or more and 85°C or less.

[Thickness of base film]
The thickness of the base film 1 is not particularly limited, but considering its use as the dicing tape 10, it is preferably in the range of, for example, 60 μm or more and 150 μm or less. More preferably, it is in the range of 70 μm or more and 120 μm or less. If the thickness of the base film 1 is less than 60 μm, there is a risk that the ring frame (wafer ring) may not be held sufficiently when the dicing tape 10 is subjected to a dicing process. Furthermore, if the thickness of the base film 1 is greater than 150 μm, there is a risk that the base film 1 will warp more due to release of residual stress during film formation. Furthermore, when the base film 1 or the dicing tape 10 is wound up into a long roll, there is a possibility that step marks may be formed on the winding core.

[Structure of base film]
The structure of the base film 1 is not particularly limited, and may be a single layer of a single resin composition, a laminate consisting of multiple layers of the same resin composition, or a laminate of multiple layers of the same resin composition. It may also be a laminate consisting of multiple layers of the composition. In the case of a laminate consisting of multiple layers, the number of layers is not particularly limited, but is preferably in the range of 2 to 5 layers, more preferably 2 or 3 layers.

When the base film 1 is a laminate consisting of a plurality of layers, for example, it may have a structure in which a plurality of layers formed using the above-mentioned resin composition exemplified as a preferred embodiment of the present embodiment are laminated. Yes, the above-mentioned resin composition exemplified as a preferred embodiment of this embodiment may be used in a layer formed using the above-mentioned resin composition exemplified as a preferred embodiment of this embodiment, within a range that does not impede the effects of the present invention. It may also have a structure in which layers formed using a resin composition other than the above resin composition are laminated.

Layers formed using other resin compositions include, for example, linear low-density polyethylene (LLDPE), low-density polyethylene (LDPE), ethylene/α-olefin copolymer, polypropylene, ethylene/unsaturated Carboxylic acid copolymer, ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester terpolymer, ethylene/unsaturated carboxylic acid alkyl ester copolymer, ethylene/vinyl ester copolymer, ethylene/unsaturated carboxylic acid copolymer Resin compositions such as acid alkyl ester/carbon monoxide copolymers, unsaturated carboxylic acid grafts thereof, single substances or blends of any plurality thereof, ionomers of ethylene/unsaturated carboxylic acid copolymers, etc. Examples include layers formed using a material. Among these, a resin composition containing a thermoplastic crosslinked resin (IO) consisting of an ionomer of an ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer and a polyamide resin (PA) according to a preferred embodiment of the present invention. From the viewpoint of adhesion with the resin layer made of the material, balance control of the physical properties of the base film 1, and versatility, ethylene/unsaturated carboxylic acid copolymer, ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester Preferred are terpolymer copolymers, ethylene/unsaturated carboxylic acid alkyl ester copolymers, ionomers of these copolymers, ethylene/α-olefin copolymers, and the like.

Examples of the case where the base film 1 of this embodiment has a laminated structure include base films having the following two-layer structure, three-layer structure, and the like.

Specifically, the two-layer structure includes, for example,
(1) [Mixture of a thermoplastic crosslinked resin (IO) consisting of an ionomer of the first ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer of the present preferred embodiment and a polyamide resin (PA)] First resin layer made of a resin composition]/[Thermoplastic crosslinked resin (IO) made of an ionomer of a first ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer of the preferred embodiment of the present invention and a second resin layer consisting of a mixed resin composition of polyamide resin (PA)] (two-layer configuration of the same resin layer),

(2) [A mixture of a thermoplastic crosslinked resin (IO) and a polyamide resin (PA) comprising an ionomer of an ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer according to the first preferred embodiment of the present invention [First resin layer consisting of a thermoplastic crosslinked resin (IO) consisting of an ionomer of an ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer and a polyamide resin A second resin layer consisting of a mixture of (PA)] (two-layer configuration of different resin layers),

(3) [First resin layer made of thermoplastic crosslinked resin (IO) made of ionomer of ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer]/[First resin layer of the preferred embodiment of the present invention] A second resin layer consisting of a mixture of a thermoplastic crosslinked resin (IO) consisting of an ionomer of an ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer and a polyamide resin (PA)] Layer structure),

(4) [First resin layer consisting of ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer (E)]/[first ethylene/unsaturated carboxylic acid based copolymer (E) of the preferred embodiment of the present invention] a second resin layer made of a mixture of a thermoplastic crosslinked resin (IO) made of a copolymer ionomer and a polyamide resin (PA)] (two-layer structure of different resin layers),

(5) [Thermoplastic crosslinked resin (IO) consisting of an ionomer of the first ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer of the present preferred embodiment, polyamide resin (PA), and ethylene・First resin layer consisting of mixed resin composition of α-olefin copolymer (EO)]/[First ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer of the preferred embodiment of the present embodiment] A second resin layer consisting of a mixed resin composition of a thermoplastic crosslinked resin (IO) consisting of a combined ionomer and a polyamide resin (PA)] (two-layer structure of different resin layers),
Examples include a two-layer structure (first resin layer/second resin layer) consisting of two layers of the same resin layer or two layers of different resin layers.

Specifically, the three-layer structure includes, for example,
(6) [A mixture of a thermoplastic crosslinked resin (IO) and a polyamide resin (PA) comprising an ionomer of an ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer according to the first preferred embodiment of the present invention First resin layer consisting of]/[Thermoplastic crosslinked resin (IO) consisting of an ionomer of the first ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer of the preferred embodiment of the present invention and a polyamide resin (PA)] / [Thermoplastic crosslinked resin ( IO) and a third resin layer consisting of a mixture of polyamide resin (PA)] (three-layer configuration of the same resin layer),

(7) [A mixture of a thermoplastic crosslinked resin (IO) and a polyamide resin (PA) comprising an ionomer of an ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer according to the first preferred embodiment of the present invention [First resin layer consisting of a thermoplastic crosslinked resin (IO) consisting of an ionomer of an ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer and a polyamide resin (PA)] / [Thermoplastic crosslinked resin ( IO) and a third resin layer consisting of a mixture of polyamide resin (PA)] (three-layer configuration of two different types of resin layers),

(8) [A mixture of a thermoplastic crosslinked resin (IO) and a polyamide resin (PA) comprising an ionomer of an ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer according to the first preferred embodiment of the present invention [First resin layer consisting of]/[Second resin layer consisting of thermoplastic crosslinked resin (IO) consisting of an ionomer of ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer]/[Suitable for this implementation] A third resin layer consisting of a mixture of a thermoplastic crosslinked resin (IO) consisting of an ionomer of the first ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer in the form of a polyamide resin (PA)] (3-layer structure of 2 types of different resin layers),

(9) [A mixture of a thermoplastic crosslinked resin (IO) and a polyamide resin (PA) comprising an ionomer of the first ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer according to the preferred embodiment of the present invention [first resin layer consisting of]/[second resin layer consisting of ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer (E)]/[first ethylene/ A third resin layer made of a mixture of a thermoplastic crosslinked resin (IO) made of an ionomer of an unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer and a polyamide resin (PA)] (3rd resin layer of two different types of resin layers) Layer structure),

(10) [A mixture of a thermoplastic crosslinked resin (IO) and a polyamide resin (PA) comprising an ionomer of the first ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid alkyl ester copolymer according to the preferred embodiment of the present invention [first resin layer consisting of]/[second resin layer consisting of ethylene/α-olefin copolymer (EO)]/[first ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid of the preferred embodiment of the present embodiment] A third resin layer made of a mixture of a thermoplastic crosslinked resin (IO) made of an ionomer of an alkyl ester copolymer and a polyamide resin (PA)] (three-layer structure of two different types of resin layers),
Examples include a three-layer structure (first resin layer/second resin layer/third resin layer) consisting of three layers of the same resin layer or three layers of different resin layers.

[Method for forming base film]
As a method for forming the base film 1 of this embodiment, a conventional method can be adopted. A resin composition obtained by melting and kneading each resin, which is the material of the base film 1, and other components as necessary, is processed by, for example, a T die-casting method, a T-die nip molding method, an inflation molding method, or an extrusion lamination method. It may be processed into a film by various molding methods such as , calendar molding, and the like. In addition, when the base film 1 is a laminate consisting of multiple layers, each layer is formed separately by a method such as a calendar molding method, an extrusion method, or an inflation molding method, and then the layers are thermally laminated or bonded with an adhesive as appropriate. A laminate can be manufactured by laminating the materials by the following method. Examples of the adhesive include a single substance or a blend of any plurality of the above-mentioned ethylene copolymers or unsaturated carboxylic acid grafts thereof. Alternatively, a laminate can also be manufactured by simultaneously extruding the resin compositions of each layer by a coextrusion lamination method. The method of forming and manufacturing the base film 1 as a laminate consisting of multiple layers requires less resin pressure in the extruder and Since the extrusion flow rate can be controlled without excessively increasing the motor load, this is suitable from the viewpoint of film forming accuracy and stable film forming, and unnecessary wrinkles are not generated in the base film 1. In addition, the film forming speed of the base film 1 can be increased, and the physical properties such as the tensile strength, stress relaxation rate, and heat shrinkage rate mentioned above can be adjusted for each layer, so the balance of these physical properties can be achieved as a whole for the base film 1. It is also suitable because it is easy to control. Note that the surface of the base film 1 that is in contact with the adhesive layer 2 may be subjected to corona treatment, plasma treatment, or the like for the purpose of improving adhesion to the adhesive layer 2, which will be described later. In addition, the surface of the base film 1 opposite to the side in contact with the adhesive layer 2 is coated with a shibo roll for the purpose of stabilizing the winding of the base film 1 during film formation and preventing blocking after film formation. An embossing process or the like may be performed.

(Adhesive layer)
The adhesive layer 2 containing the active energy ray-curable adhesive composition, which is the second component of the dicing tape 10 of the present invention, will be described below.

The present inventors have determined that the various physical properties of the base film 1 described above must be controlled within a specific range in order to be able to sufficiently and uniformly heat shrink in a shorter time than before in the heat shrink process after room temperature expansion. Based on the view that it is not sufficient to simply specify the above, we further investigated and found that the thermal resistance of the adhesive layer 2 located on the base film 1 is an important factor. It's arrived. Usually, in the heat shrink process, hot air is blown from the adhesive layer 2 side of the dicing tape 10, so if the adhesive layer 2 has high thermal resistance, the applied heat will not be efficiently transferred to the base film 1. , it becomes difficult to heat-shrink sufficiently and uniformly in a short time. Therefore, if the thermal resistance of the adhesive layer 2 is made smaller than before, the applied heat will be efficiently transferred to the base film 1, so it will be possible to shrink it by heating in a shorter time than before. As a result, we realized that the kerf width could be maintained sufficiently to prevent adjoining die bond films (adhesive layers) from contacting each other and re-adhering or being damaged, with a shorter takt time than before. Ta.

That is, the adhesive layer 2 containing the active energy ray-curable adhesive composition of the present invention has a thermal resistance of 0.45 K·cm ² /W or less. If the thermal resistance of the adhesive layer 2 exceeds 0.45Kcm ² /W, for example, in the heat shrink process, the rotation speed of the hot air blowing nozzle (rotation speed of the stage that holds the workpiece) may be set faster than before. In other words, when attempting to shorten the takt time, the slackened dicing tape 10 may not be sufficiently heat-shrinked, so the slack may not be fully eliminated, and as a result, the kerf width may not be maintained sufficiently. There is. The thermal resistance is more preferably 0.35 K·cm ² /W or less, and still more preferably 0.25 K·cm ² /W or less. The lower the thermal resistance is, the better; however, from the viewpoint of maintaining the adhesive properties of the adhesive layer 2 necessary for the dicing tape, the lower limit thereof is 0.15 K·cm ² /W.

Methods for reducing the thermal resistance of the adhesive layer 2 include, for example, (1) reducing the thickness of the adhesive layer 2 as much as possible without impairing the effects of the present invention; (2) reducing the thickness of the adhesive layer 2; One method is to increase the value of thermal conductivity as much as possible.

The adhesive layer 2 of this embodiment includes an active energy ray-curable adhesive composition. Here, the active energy ray-curable adhesive composition refers to an adhesive composition that hardens and shrinks when irradiated with active energy rays such as ultraviolet rays (UV), reducing its adhesive strength to adherends. . The active energy ray-curable adhesive composition contained in the adhesive layer 2 typically includes:
(1) Adhesive composition (A1): Comprising an acrylic adhesive polymer having a photosensitive carbon-carbon double bond and a functional group, a photopolymerization initiator, and a crosslinking agent that reacts with the functional group. adhesive composition,
(2) Adhesive composition (A2): an adhesive composition further comprising a thermally conductive filler in the above-mentioned adhesive composition (A1),
(3) Adhesive composition (B1): an adhesive composition comprising an acrylic adhesive polymer having a functional group, an active energy ray-curable compound, a photopolymerization initiator, and a crosslinking agent that reacts with the functional group. ,
(4) Adhesive composition (B2): an adhesive composition further comprising a thermally conductive filler in the above-mentioned adhesive composition (B1),
Examples include any one pressure-sensitive adhesive composition selected from the group of, but are not particularly limited to.

Among these, pressure-sensitive adhesive composition (A1) and pressure-sensitive adhesive composition (A2) are preferred from the viewpoint of suppressing adhesive residue and staining on die bond film 3. Note that the term "functional group" as used herein refers to a heat-reactive functional group that can coexist with a photosensitive carbon-carbon double bond. Examples of such functional groups are active hydrogen groups such as hydroxyl groups, carboxyl groups and amino groups, and functional groups that thermally react with active hydrogen groups such as glycidyl groups. The active hydrogen group refers to a functional group having an element other than carbon, such as nitrogen, oxygen, or sulfur, and hydrogen directly bonded to the element. In addition, in this specification, the above-mentioned "acrylic adhesive polymer having a photosensitive carbon-carbon double bond and a functional group" may be simply referred to as "active energy ray-curable acrylic adhesive polymer." .

(Adhesive composition (A1))
The adhesive composition (A1) is an adhesive comprising an acrylic adhesive polymer having a photosensitive carbon-carbon double bond and a functional group, a photopolymerization initiator, and a crosslinking agent that reacts with the functional group. It is a composition.

[Acrylic adhesive polymer with photosensitive carbon-carbon double bond and functional group]
In the above adhesive composition (A1), the acrylic adhesive polymer having a photosensitive carbon-carbon double bond and a functional group is one having a carbon-carbon double bond in its molecular side chain. The method for producing an acrylic adhesive polymer having a carbon-carbon double bond and a functional group is not particularly limited, but usually involves combining a (meth)acrylic acid alkyl ester and an unsaturated compound containing a functional group. Copolymerize to obtain an acrylic copolymer, and use a compound having a functional group and a carbon-carbon double bond (active energy ray reactive) that can undergo an addition reaction with the functional group of the acrylic copolymer. A method in which a compound) is subjected to an addition reaction can be mentioned.

The above acrylic copolymer (hereinafter referred to as "acrylic copolymer having a functional group") before addition reaction with a compound having the above functional group and a carbon-carbon double bond (active energy ray-reactive compound) Examples of the copolymers include a (meth)acrylic acid alkyl ester monomer, an active hydrogen group-containing monomer, and/or a glycidyl group-containing monomer.

Examples of the (meth)acrylic acid alkyl ester monomer include hexyl (meth)acrylate having 6 to 18 carbon atoms, n-octyl (meth)acrylate, isooctyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, and nonyl (meth)acrylate, isononyl (meth)acrylate, decyl (meth)acrylate, isodecyl (meth)acrylate, undecyl (meth)acrylate, dodecyl (meth)acrylate, tridecyl (meth)acrylate, tetradecyl (meth)acrylate, pentadecyl (meth)acrylate ) acrylate, hexadecyl (meth)acrylate, heptadecyl (meth)acrylate, octadecyl (meth)acrylate, or monomers having 5 or less carbon atoms, such as pentyl (meth)acrylate, n-butyl (meth)acrylate, isobutyl (meth)acrylate, ) acrylate, ethyl (meth)acrylate, methyl (meth)acrylate, and the like.

In addition, the active hydrogen group-containing monomers include 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 6-hydroxyhexyl (meth)acrylate, etc. Hydroxyl group-containing monomers, carboxyl group-containing monomers such as (meth)acrylic acid, itaconic acid, maleic acid, fumaric acid, crotonic acid, isocrotonic acid, acid anhydride group-containing monomers such as maleic anhydride, itaconic anhydride, etc. (meth)acrylamide, N,N-dimethyl (meth)acrylamide, N-butyl (meth)acrylamide, N-methylol (meth)acrylamide, N-methylolpropane (meth)acrylamide, N-methoxymethyl (meth)acrylamide Amide monomers such as acrylamide and N-butoxymethyl (meth)acrylamide; Amino monomers such as aminoethyl (meth)acrylate, N,N-dimethylaminoethyl (meth)acrylate, and (meth)t-butylaminoethyl (meth)acrylate Examples include group-containing monomers. These active hydrogen group-containing monomer components may be used alone or in combination of two or more. Further, examples of the glycidyl group-containing monomer include glycidyl (meth)acrylate and the like.

The content of the heat-reactive functional group is not particularly limited, but is preferably in the range of 0.5% by mass or more and 50% by mass or less based on the total amount of the comonomer components.

Specific examples of acrylic copolymers having suitable functional groups copolymerized with the above monomers include binary copolymers of "2-ethylhexyl acrylate and acrylic acid" and "2-ethylhexyl acrylate". and 2-hydroxyethyl acrylate, terpolymer of 2-ethylhexyl acrylate, methacrylic acid and 2-hydroxyethyl acrylate, and di-copolymer of n-butyl acrylate and acrylic acid. Original copolymer, binary copolymer of "n-butyl acrylate and 2-hydroxyethyl acrylate", ternary copolymer of "n-butyl acrylate, methacrylic acid and 2-hydroxyethyl acrylate", "2-hydroxyethyl acrylate" - terpolymer of ``ethylhexyl acrylate, methyl methacrylate, and 2-hydroxyethyl acrylate,'' a quaternary copolymer of ``2-ethylhexyl acrylate, n-butyl acrylate, 2-hydroxyethyl acrylate, and methacrylic acid,'' Examples include, but are not limited to, quaternary copolymers of 2-ethylhexyl acrylate, methyl methacrylate, 2-hydroxyethyl acrylate, and methacrylic acid.

The above-mentioned acrylic copolymer having a functional group may contain other comonomer components as necessary for the purpose of cohesive force, heat resistance, and the like. Specifically, such other comonomer components include, for example, cyano group-containing monomers such as (meth)acrylonitrile, and olefin monomers such as ethylene, propylene, isoprene, butadiene, and isobutylene. , styrene monomers such as styrene, α-methylstyrene, and vinyltoluene, vinyl ester monomers such as vinyl acetate and vinyl propionate, vinyl ether monomers such as methyl vinyl ether and ethyl vinyl ether, vinyl chloride, and chloride. Halogen atom-containing monomers such as vinylidene, alkoxy group-containing monomers such as methoxyethyl (meth)acrylate, ethoxyethyl (meth)acrylate, N-vinyl-2-pyrrolidone, N-methylvinylpyrrolidone, N- Vinylpyridine, N-vinylpiperidone, N-vinylpyrimidine, N-vinylpiperazine, N-vinylpyrazine, N-vinylpyrrole, N-vinylimidazole, N-vinyloxazole, N-vinylmorpholine, N-vinylcaprolactam, N-( Examples include monomers having a nitrogen atom-containing ring such as meth)acryloylmorpholine. These other comonomer components may be used alone or in combination of two or more. The copolymer having the above-mentioned functional group is not particularly limited, but includes the initial adhesion of the adhesive layer 2 to the die-bonding film 3, the releasability of the adhesive layer 2 from the die-bonding film 3 after irradiation with ultraviolet rays, and the die-bonding film at the time of peeling. From the viewpoint of controlling the balance of contamination with respect to No. 3, the glass transition temperature (Tg) is preferably in the range of -70°C or more and -10°C or less, and more preferably in the range of -65°C or more and -50°C or less. .

The above photosensitive acrylic adhesive polymer having a carbon-carbon double bond and a functional group uses an acrylic copolymer having the above-mentioned functional group, and undergoes an addition reaction with the functional group of the copolymer. It can be obtained by addition reaction of a compound having a functional group and a carbon-carbon double bond (active energy ray-reactive compound) capable of Examples of compounds having such functional groups and carbon-carbon double bonds include 2-methacryloyloxyethyl isocyanate, 4-methacryloyloxyethyl isocyanate, and Isocyanate compounds having a (meth)acryloyloxy group such as -methacryloyloxy-n-butyl isocyanate, 2-acryloyloxyethyl isocyanate, and m-isopropenyl-α,α-dimethylbenzyl isocyanate can be used. In addition, when performing an addition reaction on the carboxyl group in the side chain of the above copolymer, active energy ray-reactive compounds such as glycidyl (meth)acrylate and 2-(1-aziridinyl)ethyl (meth)acrylate are used. It can be used as Furthermore, when performing an addition reaction on the glycidyl group in the side chain of the copolymer, (meth)acrylic acid or the like can be used as an active energy ray-reactive compound.

For the above addition reaction, from the viewpoints of ease of tracing the reaction (stability of control) and technical difficulty, the isocyanate group that can undergo an addition reaction with the hydroxyl group that the acrylic copolymer has in the side chain is selected. The most suitable method is to conduct an addition reaction with a compound having a carbon-carbon double bond (an isocyanate compound having a (meth)acryloyloxy group).

In addition, when performing the above addition reaction, the active energy ray-curable acrylic adhesive polymer is crosslinked with a crosslinking agent such as a polyisocyanate crosslinking agent or an epoxy crosslinking agent, which will be described later, to further increase the molecular weight. It is preferable that a functional group such as a hydroxyl group, a carboxyl group, or a glycidyl group remain in the structure. For example, when an acrylic copolymer having a hydroxyl group in the side chain is reacted with an isocyanate compound having a (meth)acryloyloxy group, the hydroxyl group (-OH) in the side chain of the copolymer ( The compounding ratio of the isocyanate groups (-NCO) of the isocyanate compound having a meth)acryloyloxy group may be adjusted so that the equivalent ratio [(NCO)/(OH)] of the two is less than 1.0. In this way, an acrylic adhesive polymer having a carbon-carbon double bond and a functional group such as a (meth)acryloyloxy group, that is, an active energy ray-curable acrylic adhesive polymer can be obtained.

In the above addition reaction, it is preferable to use a polymerization inhibitor so that the active energy ray reactivity of the carbon-carbon double bond is maintained. As such a polymerization inhibitor, a quinone-based polymerization inhibitor such as hydroquinone monomethyl ether is preferable. The amount of the polymerization inhibitor is not particularly limited, but is usually in the range of 0.01 part by mass or more and 0.1 part by mass or less based on the total amount of the copolymer having a functional group and the active energy ray-reactive compound. It is preferable that there be.

The photosensitive acrylic adhesive polymer having a carbon-carbon double bond and a functional group is not particularly limited, but preferably has a hydroxyl value in the range of 12.0 mgKOH/g to 55.0 mgKOH/g. . When the hydroxyl value is within the above range, even when the thickness of the adhesive layer 2 is reduced, the effect of reducing the adhesive strength of the adhesive layer 2 due to ultraviolet irradiation is not hindered, and the die bond film 3 of the adhesive layer 2 It is possible to ensure initial adhesion to. Further, since an appropriate crosslinked structure can be formed by adding a crosslinking agent, the cohesive force of the adhesive layer 2 can be improved. The above hydroxyl group is more preferably in a range of 17.0 mgKOH/g or more and 39.0 mgKOH/g or less.

Further, the photosensitive acrylic adhesive polymer having a carbon-carbon double bond and a functional group is not particularly limited, but the acid value must be in the range of 2.0 mgKOH/g or more and 9.0 mgKOH/g or less. is preferred. When the acid value is within the above range, even when the thickness of the adhesive layer 2 is reduced, the adhesive strength of the adhesive layer 2 can be reduced without hindering the effect of reducing the adhesive force of the adhesive layer 2 due to irradiation with active energy rays such as ultraviolet rays. Initial adhesion to the die-bonding film 3 of No. 2 can be ensured. The acid value is more preferably in the range of 2.5 mgKOH/g or more and 8.2 mgKOH/g or less.

Furthermore, the carbon-carbon double bond content of the acrylic adhesive polymer having photosensitive carbon-carbon double bonds and functional groups is such that the adhesive layer 2 has sufficient adhesiveness after irradiation with active energy rays such as ultraviolet rays. The amount may be sufficient as long as the effect of reducing force can be obtained, and although it is not unambiguous depending on usage conditions such as the irradiation amount of active energy rays, it is, for example, in the range of 0.85 meq/g or more and 1.60 meq/g or less. It is preferable. When the carbon-carbon double bond content is less than 0.85 meq/g, the adhesive force reduction effect in the adhesive layer 2 after irradiation with active energy rays becomes small, and the pickup failure of the semiconductor chip with the adhesive layer 3 increases. There is a risk of On the other hand, if the carbon-carbon double bond content exceeds 1.60 meq/g, depending on the copolymer composition of the acrylic adhesive polymer, gelation may occur during polymerization or reaction during synthesis, making synthesis difficult. There are cases. In addition, when confirming the carbon-carbon double bond content of the active energy ray-curable acrylic adhesive polymer, the carbon-carbon double bond content can be determined by measuring the iodine value of the active energy ray-curable acrylic adhesive polymer. Bond content can be calculated.

Furthermore, the photosensitive acrylic adhesive polymer having a carbon-carbon double bond and a functional group preferably has a weight average molecular weight (Mw) in the range of 200,000 to 2,000,000, although it is not particularly limited. . When the weight average molecular weight (Mw) of the active energy ray-curable acrylic adhesive polymer is less than 200,000, high viscosity active energy of several thousand cP or more and tens of thousands of cP or less is used, taking into consideration coating properties, etc. This is not preferred because it is difficult to obtain a solution of the linearly curable resin composition. In addition, the cohesive force of the adhesive layer 2 before irradiation with active energy rays becomes small, so that, for example, when the semiconductor chip with die bond film 3 is detached from the adhesive layer 2 after irradiation with active energy rays, the die bond film 3 may be contaminated. There is a risk. On the other hand, if the weight average molecular weight (Mw) exceeds 2 million, there is no particular problem in terms of properties as an adhesive, but acrylic adhesive polymers with photosensitive carbon-carbon double bonds and functional groups It is difficult to mass-produce it, and for example, an acrylic adhesive polymer having a photosensitive carbon-carbon double bond and a functional group may gel during synthesis, which is undesirable. The weight average molecular weight (Mw) is more preferably 300,000 or more and 1,500,000 or less. Here, the weight average molecular weight (Mw) means a standard polystyrene equivalent value measured by gel permeation chromatography (GPC).

Furthermore, the photosensitive acrylic adhesive polymer having a carbon-carbon double bond and a functional group is not particularly limited, but preferably has a molecular weight distribution (Mw/Mn ). From the viewpoint of improving the cohesive force of the adhesive layer 2, the upper limit thereof is more preferably 10.0 or less, and even more preferably 2.5 or less. Molecular weight distribution (Mw/Mn) is the ratio of weight average molecular weight (Mw) to number average molecular weight (Mn). Weight average molecular weight (Mw) and number average molecular weight (Mn) mean standard polystyrene equivalent values measured by gel permeation chromatography (GPC).

When the molecular weight distribution (Mw/Mn) of the photosensitive acrylic adhesive polymer having a carbon-carbon double bond and a functional group is within the above range, the entire active energy ray-curable acrylic adhesive polymer Among them, the proportion of low molecular weight components that are difficult to contribute to crosslinking, that is, low molecular weight components that have no or almost no heat-reactive functional groups or photosensitive carbon-carbon double bonds, is small. . Therefore, even when the thickness of the adhesive layer 2 is reduced in order to reduce the thermal resistance of the adhesive layer 2, the cohesive force can be made sufficient by adding the crosslinking agent described later, and the die bond film It becomes easy to ensure initial adhesion to No. 3. Furthermore, the adhesive force of the adhesive layer 2 after irradiation with active energy rays can be appropriately reduced, and contamination of the die bond film 3 when detaching the semiconductor chip with the die bond film 3 from the adhesive layer 2 can be easily suppressed. Become.

The acrylic adhesive polymer having a functional group (acrylic copolymer having a functional group) that becomes the base polymer of the active energy ray-curable acrylic adhesive polymer can be obtained by subjecting a mixture of the above-mentioned monomers to polymerization. However, the polymerization can be carried out by any method such as solution polymerization, emulsion polymerization, bulk polymerization, or suspension polymerization. Preferred reaction modes for the polymerization include free radical polymerization and living radical polymerization, but from the viewpoint of narrowing the molecular weight distribution (Mw/Mn) as much as possible, living radical polymerization that does not involve a polymerization termination reaction or transfer reaction is preferable. More preferably, the polymerization is carried out by radical polymerization. Among these, solution polymerization using living radical polymerization as a reaction mode is particularly suitable. The adhesive layer 2 is made of an adhesive composition containing an active energy ray-curable acrylic adhesive polymer whose base polymer is an acrylic copolymer having a functional group polymerized by free radical polymerization, which is at least a polymerization initiator. It contains an organic peroxide and/or an azo compound. Furthermore, the adhesive layer 2 is made of an adhesive composition containing an active energy ray-curable acrylic adhesive polymer whose base polymer is an acrylic copolymer having a functional group polymerized by living radical polymerization. It contains a halide which is a catalyst and/or a transition metal complex which is a catalyst. As the organic peroxide, azo compound, halide, and transition metal complex, known or commonly used ones can be used.

[Photopolymerization initiator]
As described above, the active energy ray-curable acrylic adhesive composition (adhesive composition (A1)) contains a photopolymerization initiator that generates radicals upon irradiation with active energy rays. The photopolymerization initiator senses the irradiation of active energy rays to the adhesive layer during detachment of the adherend, generates radicals, and removes the carbon contained in the active energy ray-curable acrylic adhesive polymer in the adhesive layer 2. - Initiate the crosslinking reaction of carbon double bonds. As a result, the adhesive layer further hardens and contracts under irradiation with active energy rays, thereby reducing its adhesive force to the adherend. The photopolymerization initiator is preferably a compound that generates radically active species by ultraviolet rays or the like, such as an alkylphenone radical polymerization initiator, an acylphosphine oxide radical polymerization initiator, an oxime ester radical polymerization initiator, etc. It will be done. These photopolymerization initiators may be used alone or in combination of two or more.

Examples of the alkylphenone radical polymerization initiators include benzyl methyl ketal radical polymerization initiators, α-hydroxyalkylphenone radical polymerization initiators, α-aminoalkylphenone radical polymerization initiators, and the like.

Specifically, the benzyl methyl ketal radical polymerization initiator is, for example, 2,2'-dimethoxy-1,2-diphenylethan-1-one (for example, trade name: Omnirad 651, IGM Resins B.V. (manufactured by a company), etc. Specifically, the α-hydroxyalkylphenone radical polymerization initiator is, for example, 2-hydroxy-2-methyl-1-phenylpropan-1-one (trade name: Omnirad 1173, manufactured by IGM Resins B.V. ), 1-hydroxycyclohexyl phenylketone (trade name: Omnirad184, manufactured by IGM Resins B.V.), 1-[4-(2-hydroxyethoxy)phenyl]-2-hydroxy-2-methyl-1-propane -1-one (trade name: Omnirad2959, manufactured by IGM Resins B.V.), 2-hydroxy-1-{4-[4-(2-hydroxy-2-methylpropionyl)benzyl]phenyl}-2-methyl Examples include propan-1-one (trade name Omnirad 127, manufactured by IGM Resins B.V.). Specifically, the α-aminoalkylphenone radical polymerization initiator is, for example, 2-methyl-1-(4-methylthiophenyl)-2-morpholinopropan-1-one (trade name: Omnirad 907, IGM Resins B.V.), 2-benzyl-2-(dimethylamino)-4'-morpholinobutyrophenone (trade name: Omnirad369, manufactured by IGM Resins B.V.), 2-dimethylamino-2-( Examples include 4-methylbenzyl)-1-(4-morpholin-4-yl-phenyl)-butan-1-one (trade name: Omnirad 379EG, manufactured by IGM Resins B.V.).

Specific examples of the acylphosphine oxide radical polymerization initiator include 2,4,6-trimethylbenzoyl-diphenylphosphine oxide (trade name: OmniradTPO, manufactured by IGM Resins B.V.), Examples include (2,4,6-trimethylbenzoyl)-phenylphosphine oxide (trade name: Omnirad 819, manufactured by IGM Resins B.V.).

As the oxime ester radical polymerization initiator, 1,2-octanedione, 1-[4-(phenylthio)phenyl]-,2-(O-benzoyloxime) (trade name: OmniradOXE-01, IGM Resins B. (manufactured by V. Co.), etc.

The amount of the photopolymerization initiator added is preferably in the range of 0.1 parts by mass or more and 10.0 parts by mass or less, based on 100 parts by mass of the solid content of the active energy ray-curable acrylic adhesive polymer. preferable. If the amount of photopolymerization initiator added is less than 0.1 parts by mass, the photoreactivity to active energy rays is insufficient, so even if irradiated with active energy rays, the photoradical crosslinking reaction of the acrylic adhesive polymer will not occur. does not occur sufficiently, resulting in insufficient curing and shrinkage of the adhesive, and as a result, the adhesive force reduction effect in the adhesive layer 2 after irradiation with active energy rays is reduced, and there is a risk that pick-up failures of semiconductor chips may increase. . On the other hand, if the amount of the photopolymerization initiator added exceeds 10.0 parts by mass, the effect is saturated, which is also unfavorable from the economic point of view. Furthermore, depending on the type of photopolymerization initiator, the adhesive layer 2 may turn yellow and have a poor appearance.

Further, as a sensitizer for such a photopolymerization initiator, compounds such as dimethylaminoethyl methacrylate and isoamyl 4-dimethylaminobenzoate may be added to the adhesive.

[Crosslinking agent]
As described above, the active energy ray-curable acrylic adhesive composition (adhesive composition (A1)) further contains a crosslinking agent to increase the molecular weight of the active energy ray-curable acrylic adhesive polymer. do. Such crosslinking agents are not particularly limited, and include known crosslinking agents having functional groups that can react with the functional groups of the active energy ray-curable acrylic adhesive polymer, such as hydroxyl groups, carboxyl groups, and glycidyl groups. agents can be used. Specifically, for example, polyisocyanate crosslinking agents, epoxy crosslinking agents, aziridine crosslinking agents, melamine resin crosslinking agents, urea resin crosslinking agents, acid anhydride crosslinking agents, polyamine crosslinking agents, and carboxyl group-containing crosslinking agents. Examples include polymer crosslinking agents. Among these, it is preferable to use a polyisocyanate crosslinking agent or an epoxy crosslinking agent from the viewpoint of reactivity and versatility. These crosslinking agents may be used alone or in combination of two or more. The blending amount of the crosslinking agent is preferably in the range of 0.01 parts by mass or more and 10 parts by mass or less, based on 100 parts by mass of the solid content of the active energy ray-curable acrylic adhesive polymer. More preferably, it is in the range of 0.1 parts by mass or more and 5 parts by mass or less, and still more preferably in the range of 0.5 parts by mass or more and 4 parts by mass or less.

Examples of the polyisocyanate crosslinking agent include a polyisocyanate compound having an isocyanurate ring, an adduct polyisocyanate compound obtained by reacting trimethylolpropane with hexamethylene diisocyanate, and an adduct obtained by reacting trimethylolpropane with tolylene diisocyanate. Examples include polyisocyanate compounds, adduct polyisocyanate compounds obtained by reacting trimethylolpropane and xylylene diisocyanate, and adduct polyisocyanate compounds obtained by reacting trimethylolpropane and isophorone diisocyanate. These can be used alone or in combination of two or more.

Examples of the epoxy crosslinking agent include bisphenol A/epichlorohydrin type epoxy resin, ethylene glycol diglycidyl ether, polyethylene glycol diglycidyl ether, glycerin diglycidyl ether, glycerin triglycidyl ether, and 1,6-hexanediol diglycidyl ether. , trimethylolpropane triglycidyl ether, sorbitol polyglycidyl ether, polyglycerol polyglycidyl ether, pentaerythritol polyglycidyl erythritol, diglycerol polyglycidyl ether, 1,3'-bis(N,N-diglycidylaminomethyl)cyclohexane, N , N,N',N'-tetraglycidyl-m-xylene diamine, and the like. These can be used alone or in combination of two or more.

After forming the adhesive layer 2 with the active energy ray curable resin composition (adhesive composition (A1)), the crosslinking agent and the functional group possessed by the active energy ray curable acrylic adhesive polymer are reacted. The aging conditions for this purpose are not particularly limited, but, for example, the temperature may be appropriately set in the range of 23° C. or more and 80° C. or less, and the time may be appropriately set in the range of 24 hours or more and 168 hours or less.

[others]
The active energy ray-curable acrylic adhesive composition (adhesive composition (A1)) may contain, if necessary, a polyfunctional acrylic monomer, a polyfunctional acrylic oligomer, etc., as long as the effects of the present invention are not impaired. , tackifiers, fillers, anti-aging agents, colorants, flame retardants, antistatic agents, surfactants, silane coupling agents, leveling agents, and other additives may be added.

(Adhesive composition (A2))
The adhesive composition (A2) is an adhesive composition that further contains a thermally conductive filler in addition to the above-mentioned adhesive composition (A1). When the adhesive layer 2 made of the adhesive composition (A2) has the same thickness as the adhesive layer 2 made of the adhesive composition (A1) that does not contain a thermally conductive filler, Since the thermal conductivity increases, the thermal resistance decreases.

[Thermal conductive filler]
In the adhesive composition (A2), the material of the thermally conductive filler is not particularly limited, but examples thereof include boron nitride, aluminum nitride, aluminum oxide, aluminum hydroxide, boehmite, magnesium oxide, aluminum, copper, diamond, etc. Can be mentioned. Among these, boron nitride, aluminum oxide, aluminum hydroxide, and magnesium oxide are preferred from the viewpoint of versatility.

The average particle diameter of the thermally conductive filler is not particularly limited, but is preferably in the range of 0.1 μm or more and 10 μm or less. When the average particle diameter of the thermally conductive filler is less than 0.1 μm, the viscosity of the solution of the adhesive composition increases, and it may be difficult to apply a uniform thin film to the base film 1 of the adhesive layer 2. be. Moreover, especially when the content of the thermally conductive filler is large, the adhesive force of the adhesive layer 2 may be reduced. On the other hand, when the average particle size of the thermally conductive filler exceeds 10 μm, if the thickness of the adhesive layer 2 is small, the surface undulations of the adhesive layer 2 may become large, and the adhesive force of the adhesive layer 2 may decrease. There is. When the adhesive force of the adhesive layer 2 decreases, the initial adhesion to the die bond film 3 and the fixing force to the ring frame decrease, which may cause problems in the bonding process and the expanding process. The average particle diameter of the thermally conductive filler is more preferably in the range of 0.2 μm or more and 3 μm or less. In the present invention, the average particle diameter of the thermally conductive filler is determined by observing the particles of the thermally conductive filler using a scanning electron microscope (SEM) or a transmission electron microscope (TEM), and determining the long axis diameter of 100 particles. shall be measured and the arithmetic mean value shall be obtained.

The content of the thermally conductive filler is not particularly limited as long as it does not impede the effects of the present invention, but for example, it is in the range of 5% to 20% by volume with respect to the total volume of the adhesive composition. It is preferable. If the content of the thermally conductive filler is less than 5% by volume, sufficient thermal conductivity may not be obtained. On the other hand, if the content of the thermally conductive filler exceeds 20% by volume, the adhesive force of the adhesive layer 2 may decrease, and the initial adhesion to the die-bonding film 3 may decrease. Furthermore, when active energy rays such as ultraviolet rays are irradiated, the transmission of the active energy rays is partially blocked, and the adhesive force of the adhesive layer 2 may not be sufficiently reduced. Note that the above volume ratio can be calculated using the specific gravity of each material.

[Dispersant]
When the thermally conductive filler is mixed with the active energy ray-curable acrylic adhesive polymer, the viscosity may increase. This is considered to be due to the interaction between the thermally conductive filler and the active energy ray-curable acrylic adhesive polymer. Therefore, a dispersant may be added to the pressure-sensitive adhesive composition (A2) in order to suppress the thickening phenomenon. The dispersant is preferably a polymeric dispersant that has good affinity with the active energy ray-curable acrylic adhesive polymer. Examples of the above polymeric dispersants include acrylic, vinyl, polyester, polyurethane, polyether, epoxy, polystyrene, and amino polymer compounds. The above-mentioned dispersants can be used alone or in combination of two or more.

The dispersant preferably has a functional group in order to enhance the dispersion function. Examples of the above functional groups include carboxyl groups, phosphoric acid groups, sulfonic acid groups, carboxylic ester groups, phosphoric ester groups, sulfonic ester groups, hydroxyl groups, amino groups, quaternary ammonium bases, amide groups, etc. More preferably, the dispersant is an amphoteric dispersant having both an acidic functional group and a basic functional group.

The acidity of the dispersant is determined based on its acid value, and the basicity of the dispersant is determined based on its amine value. For example, by using a dispersant having an acid value of 20 mgKOH/g or more, thickening of the adhesive composition (A2) can be prevented. Further, by using a dispersant having an amine value of 5 mgKOH/g or more, changes in adhesive strength during storage of the adhesive can be prevented. The acidic functional group of the dispersant covers the basic active sites of the thermally conductive filler and suppresses the interaction between the thermally conductive filler and the active energy ray-curable acrylic adhesive polymer. It is thought that this prevents the thickening phenomenon of the agent composition (A2). In addition, the basic functional groups in the dispersant interact with the acidic functional groups in the active energy ray-curable acrylic adhesive polymer, thereby inhibiting the dispersant from migrating to the interface of the adhesive composition. This is thought to prevent changes in adhesive strength during storage of the adhesive.

The content of the dispersant is preferably in the range of 0.1 parts by mass or more and 15 parts by mass or less, and preferably in the range of 0.3 parts by mass or more and 10 parts by mass or less, based on 100 parts by mass of the thermally conductive filler. is more preferable. If the content of the dispersant is less than 0.1 parts by mass, sufficient dispersibility cannot be obtained, and if the content of the dispersant exceeds 15 parts by mass, the adhesive strength at high temperatures tends to decrease. , there is a concern that the initial adhesion to the die-bonding film 3 will be affected.

(Adhesive composition (B1))
The adhesive composition (B1) is an adhesive composition comprising an acrylic adhesive polymer having a functional group, an active energy ray-curable compound, a photopolymerization initiator, and a crosslinking agent that reacts with the functional group. . In the above adhesive composition (B1), the acrylic adhesive polymer having a functional group is the same as that exemplified as the acrylic copolymer having a functional group in the explanation of the above adhesive composition (A1). can be used. Further, as for the photopolymerization initiator and the crosslinking agent, the same ones as those exemplified in the explanation of the above-mentioned adhesive composition (A1) can be used, and the usage conditions such as content can also be the same. .

[Active energy ray-curable compound]
The active energy ray-curable compound of the pressure-sensitive adhesive composition (B1) is, for example, a low molecular weight compound having at least two carbon-carbon double bonds in its molecule, which can be formed into a three-dimensional network by irradiation with active energy rays. is widely used. Specific examples of such low molecular weight compounds include trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, tetraethylene glycol di(meth)acrylate, and 1,6-hexanediol di(meth)acrylate. (meth)acrylate, neopentyl glycol di(meth)acrylate, esterified product of (meth)acrylic acid and polyhydric alcohol such as dipentaerythritol hexa(meth)acrylate; 2-propenyl-di-3-butenyl cyanurate; Examples include isocyanurates or isocyanurate compounds such as 2-hydroxyethylbis(2-acryloxyethyl)isocyanurate and tris(2-methacryloxyethyl)isocyanurate.These active energy ray-curable low molecular weight compounds include: They may be used alone or in combination of two or more.

Furthermore, as the active energy ray curable compound, in addition to the above-mentioned low molecular weight compounds, active energy ray curable oligomers such as epoxy acrylate oligomers, urethane acrylate oligomers, and polyester acrylate oligomers can also be used. Epoxy acrylate is synthesized by an addition reaction between an epoxy compound and (meth)acrylic acid. Urethane acrylate is synthesized, for example, by reacting the isocyanate group remaining at the end of an addition reaction product of a polyol and a polyisocyanate with a hydroxy group-containing (meth)acrylate to introduce a (meth)acrylic group to the molecule end. Polyester acrylate is synthesized by reaction of polyester polyol and (meth)acrylic acid. The active energy ray-curable oligomer preferably has three or more carbon-carbon double bonds in the molecule, from the viewpoint of reducing the adhesive force of the adhesive layer 2 after irradiation with active energy rays. These active energy ray-curable oligomers may be used alone or in combination of two or more.

The weight average molecular weight Mw of the active energy ray-curable oligomer is not particularly limited, but is preferably in the range of 100 or more and 30,000 or less. From both the viewpoints of the effect of reducing adhesive strength, it is more preferable that it is in the range of 500 or more and 6,000 or less.

The content of the active energy ray-curable compound is 5 parts by mass or more and 500 parts by mass or less, preferably 50 parts by mass or more and 180 parts by mass or less, based on 100 parts by mass of the acrylic adhesive polymer having a functional group. It is preferable that there be. When the content of the active energy ray-curable compound is within the above range, the adhesive force of the adhesive layer 2 can be appropriately reduced after irradiation with active energy rays, and the pickup can be performed without damaging the semiconductor chip with the die-bonding film 3. It can be done easily.

(Adhesive composition (B2))
The adhesive composition (B2) is an adhesive composition that further contains a thermally conductive filler in addition to the above-mentioned adhesive composition (B1). The adhesive layer 2 made of the adhesive composition (B2) is made of an adhesive composition (B2) that does not contain a thermally conductive filler.
Compared to the adhesive layer 2 made of B1), when the adhesive layer 2 has the same thickness, its thermal conductivity is higher and the thermal resistance is lower. In the above adhesive composition (B1), the same thermally conductive fillers as those exemplified in the explanation of the above adhesive composition (A2) can be used, and the usage conditions such as content are also the same. It can be done. Moreover, the same dispersant as exemplified in the description of the above-mentioned pressure-sensitive adhesive composition (A2) can be used, and the usage conditions such as content can also be the same.

The thickness of the adhesive layer 2 of the dicing tape 10 of the present embodiment is not particularly limited, and the thickness of the adhesive layer 2 is such that the thermal resistance of the adhesive layer 2 is 0.45 K·cm ² /W or less. Although it may be adjusted as appropriate depending on the value of thermal conductivity, it is preferably in the range of 4 μm or more and 15 μm or less, for example. More specifically, when the adhesive composition constituting the adhesive layer 2 does not contain a thermally conductive filler, the thickness is preferably in the range of 4 μm or more and 9 μm or less, and the adhesive composition constituting the adhesive layer 2 When the agent composition contains a thermally conductive filler, it is preferably in the range of 9 μm or more and 15 μm or less, for example. In each case, if the thickness of the adhesive layer 2 is less than the preferable lower limit, the adhesive force will decrease, and there is a possibility that the initial adhesion to the die bond film 3 and the fixing force to the ring frame will be insufficient. On the other hand, if the thickness of the adhesive layer 2 exceeds the preferable upper limit, the thermal resistance will increase, and in the heat shrink process, for example, when the rotation speed of the hot air blowing nozzle is set faster than before, that is, the takt time will be reduced. When trying to shorten the dicing tape 10, the slackened dicing tape 10 will not be sufficiently heat-shrinked, so the slack will not be fully eliminated, and as a result, the kerf width may not be maintained sufficiently.

(Anchor coat layer)
In the dicing tape 10 of this embodiment, the base film 1 and the pressure-sensitive adhesive layer 2 are adjusted according to the manufacturing conditions of the dicing tape 10, the usage conditions of the dicing tape 10 after manufacturing, etc., within a range that does not impair the effects of the present invention. An anchor coat layer matching the composition of the base film 1 may be provided between the base film 1 and the base film 1. Providing the anchor coat layer improves the adhesion between the base film 1 and the adhesive layer 2.

(Release liner)
Further, a release liner may be provided on the opposite surface side (one surface side) of the adhesive layer 2 from the base film 1, if necessary. There are no particular restrictions on what can be used as the release liner, but examples include synthetic resins such as polyethylene, polypropylene, and polyethylene terephthalate, and papers. Further, the surface of the release liner may be subjected to a release treatment using a silicone release agent, a long chain alkyl release agent, a fluorine release agent, or the like in order to improve the releasability of the adhesive layer 2. The thickness of the release liner is not particularly limited, but one in the range of 10 μm to 200 μm can be suitably used.

(Method for manufacturing dicing tape)
FIG. 4 is a flowchart illustrating a method for manufacturing the dicing tape 10. First, a release liner is prepared (step S101: release liner preparation step). Next, a coating solution for the adhesive layer 2 (adhesive layer forming coating solution), which is a material for forming the adhesive layer 2, is prepared (step S102: coating solution preparation step). The coating solution can be prepared, for example, by uniformly mixing and stirring the active energy ray-curable acrylic adhesive polymer, the photopolymerization initiator, the crosslinking agent, and the diluent solvent, which are the constituent components of the adhesive layer 2. . As the solvent, for example, general-purpose organic solvents such as toluene and ethyl acetate can be used.

Then, using the coating solution for the adhesive layer 2 prepared in step S102, the coating solution is applied onto the release-treated surface of the release liner and dried to form the adhesive layer 2 with a predetermined thickness (step S103: Adhesive layer forming step). The coating method is not particularly limited, and can be coated using, for example, a die coater, a comma coater (registered trademark), a gravure coater, a roll coater, a reverse coater, or the like. Further, the drying conditions are not particularly limited, but for example, it is preferable that the drying temperature be within the range of 80° C. to 150° C., and the drying time be within the range of 0.5 minutes to 5 minutes. Subsequently, the base film 1 is prepared (step S104: base film preparation step). Then, the base film 1 is pasted onto the adhesive layer 2 formed on the release liner (step S105: base film pasting step). Finally, the formed adhesive layer 2 is aged for 72 hours in an environment of 40° C. to cause the active energy ray-curable acrylic adhesive polymer to react with the crosslinking agent, thereby crosslinking and curing it (Step S106: Heat curing process). Through the above steps, it is possible to manufacture a dicing tape 10 having the adhesive layer 2 and the release liner on the base film 1 in this order from the base film side. Note that, in the present invention, a laminate including a release liner on the adhesive layer 2 may also be referred to as the dicing tape 10.

In addition, as a method for forming the adhesive layer 2 on the base film 1, a coating solution for the adhesive layer 2 is applied onto the release liner and dried, and then the base material is coated on the adhesive layer 2. Although the method of bonding the film 1 is illustrated, a method of directly applying a coating solution for the adhesive layer 2 onto the base film 1 and drying it may also be used. From the viewpoint of stable production, the former method is preferably used.

The dicing tape 10 of the present embodiment may be wound into a roll or may be a stack of wide sheets. Further, the dicing tape 10 of these forms may be cut into a predetermined size to form a sheet or tape.

<Dicing die bond film>
The dicing tape 10 of the present embodiment is manufactured in the form of a dicing die bond film 20 in which a die bond film (adhesive layer) 3 is peelably adhered and laminated on the adhesive layer 2 of the dicing tape 10 in a semiconductor manufacturing process. You can also use The die bond film (adhesive layer) 3 is for adhering and connecting the separated semiconductor chips to a lead frame or a wiring board (supporting board). Furthermore, when semiconductor chips are stacked, it also serves as an adhesive layer between the semiconductor chips.

When stacking semiconductor chips, the first layer of semiconductor chips is bonded to the semiconductor chip mounting wiring board on which terminals are formed using a die bond film (adhesive layer) 3, and then a die bond film is placed on top of the first layer of semiconductor chips. (Adhesive layer) 3 is used to bond the second tier semiconductor chip. The connection terminals of the first-stage semiconductor chip and the second-stage semiconductor chip are electrically connected to external connection terminals via wires, but the wires for the first-stage semiconductor chip are die-bonded during crimping (die bonding). It is embedded in a film (adhesive layer) 3, that is, a wire-embedded die bond film (adhesive layer) 3.

(Die bond film)
The die bond film (adhesive layer) 3 is a layer made of a thermosetting adhesive composition that is cured by heat. The adhesive composition is not particularly limited, and conventionally known materials can be used. A preferred embodiment of the adhesive composition includes, for example, a glycidyl group-containing (meth)acrylic acid ester copolymer as a thermoplastic resin, an epoxy resin as a thermosetting resin, and a phenol resin as a curing agent for the epoxy resin. Examples include thermosetting adhesive compositions in which a curing accelerator, an inorganic filler, a silane coupling agent, etc. are added to a resin composition containing the above. The die-bonding film (adhesive layer) 3 made of such a thermosetting adhesive composition has excellent adhesion between a semiconductor chip and a support substrate, and between a semiconductor chip and a semiconductor chip, and has excellent electrode embedding properties and/or wire embedding properties. It is preferable because it has the following characteristics: it can be bonded at a low temperature in the die bonding process, excellent curing can be obtained in a short time, and it has excellent reliability after being molded with a sealant.

A general-purpose die-bond film used in a form in which the wire is not embedded in the adhesive layer and a wire-embedded die-bond film used in a form in which the wire is embedded in the adhesive layer are The types are often almost the same, but by changing the blending ratio of the materials used and the physical properties/characteristics of individual materials depending on the purpose, it can be used for general purpose die bonding film or for wire-embedded die bonding. Customized for film. Furthermore, if there is no problem with the reliability of the final semiconductor device, a wire-embedded die bond film may be used as a general-purpose die bond film. That is, the wire-embedded die-bonding film is not limited to wire-embedding applications, but can also be used for bonding semiconductor chips to substrates with unevenness caused by wiring, metal substrates such as lead frames, and the like.

(Adhesive composition for general purpose die bond film)
First, an example of an adhesive composition for a general-purpose die-bonding film will be described, but the invention is not particularly limited to this example. As an indicator of the fluidity during die bonding of the die bond film 3 formed from the adhesive composition, for example, the shear viscosity at 80°C can be mentioned, but in the case of a general-purpose die bond film, the shear viscosity at 80°C is generally used. indicates a value in the range of 20,000 Pa·s or more and 40,000 Pa·s or less, preferably 25,000 Pa·s or more and 35,000 Pa·s or less. A preferred embodiment of the adhesive composition for general-purpose die-bonding films includes the sum of the glycidyl group-containing (meth)acrylic acid ester copolymer, the epoxy resin, and the phenol resin, which are resin components of the adhesive composition. When the amount is based on 100 parts by mass, (a) the above glycidyl group-containing (meth)acrylic acid ester copolymer in a range of 52 parts by mass to 90 parts by mass, and the above epoxy resin in a range of 5 parts by mass to 25 parts by mass. (b) a curing accelerator is contained in the epoxy resin and the phenol resin in the following range, in the range of 5 parts by mass or more and 23 parts by mass or less of the phenolic resin, adjusted so that the total amount of the resin component is 100 parts by mass; and (c) an inorganic filler in the range of 0.1 part by mass or more and 0.3 parts by mass or less based on 100 parts by mass of the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer and the epoxy resin. and the above-mentioned phenol resin, in an amount of 5 parts by mass or more and 20 parts by mass or less, based on 100 parts by mass of the total amount of the above-mentioned phenol resin.

Moreover, a silane coupling agent can be added to the adhesive composition for general-purpose die bonding films, if necessary, from the viewpoint of improving adhesive strength to adherends. The amount of the silane coupling agent added is preferably in the range of 1.0 parts by mass or more and 7.0 parts by mass or less, based on a total of 100 parts by mass of the epoxy resin and the phenol resin. The above-mentioned glycidyl group-containing (meth)acrylic acid ester copolymer, epoxy resin, phenol resin, curing accelerator, inorganic filler, silane coupling agent, etc. are known as materials for general-purpose die bond film adhesive compositions. Any conventional one can be used.

(Adhesive composition for wire-embedded die bond film)
Next, an example of an adhesive composition for a wire-embedded die-bonding film will be described, but the invention is not particularly limited to this example. As an index of the fluidity during die bonding of the die bond film 3 formed from the adhesive composition, for example, the shear viscosity at 80°C can be mentioned, but in the case of a wire-embedded die bond film, generally The shear viscosity shows a value in the range of 200 Pa·s or more and 11,000 Pa·s or less, preferably 2,000 Pa·s or more and 7,000 Pa·s or less. A preferred embodiment of the adhesive composition for wire-embedded die-bonding films includes the glycidyl group-containing (meth)acrylic acid ester copolymer, which is a resin component of the adhesive composition, the epoxy resin, and the phenol resin. (a) the glycidyl group-containing (meth)acrylic ester copolymer in a range of 17 parts by mass to 51 parts by mass, and the epoxy resin in a range of 30 parts by mass to 64 parts by mass, based on the total amount of 100 parts by mass. (b) a curing accelerator is contained in the epoxy resin and the above-mentioned phenol resin in a range of 19 parts by mass or more and 53 parts by mass or less, adjusted so that the total amount of the resin component is 100 parts by mass; The above-mentioned glycidyl group-containing (meth)acrylic acid ester copolymer and the above-mentioned glycidyl group-containing (meth)acrylic acid ester copolymer contain an inorganic filler in an amount of 0.01 part by mass or more and 0.07 parts by mass or less based on 100 parts by mass of the total amount with the phenol resin. An example of an adhesive composition may include an amount of 10 parts by mass or more and 80 parts by mass or less based on 100 parts by mass of the total amount of the epoxy resin and the phenol resin.

Moreover, a silane coupling agent can be added to the adhesive composition for general-purpose die bonding films, if necessary, from the viewpoint of improving adhesive strength to adherends. The amount of the silane coupling agent added is 0.5 parts by mass or more and 2.0 parts by mass or less, based on a total of 100 parts by mass of the epoxy resin and the phenol resin, from the viewpoint of suppressing the generation of voids on the adhesive surface. It is preferable that it is in the range of . The above-mentioned glycidyl group-containing (meth)acrylic ester copolymers, epoxy resins, phenolic resins, curing accelerators, inorganic fillers, silane coupling agents, etc. are used as materials for adhesive compositions for wire-embedded die-bonding films. Any known or commonly used material can be used.

(Thickness of die bond film (adhesive layer))
The thickness of the die-bonding film (adhesive layer) 3 is not particularly limited, but is in order to ensure adhesive strength, to properly embed wires for connecting semiconductor chips, or to sufficiently fill irregularities such as wiring circuits on the board. , preferably in the range of 5 μm or more and 200 μm or less. If the thickness of the die-bonding film (adhesive layer) 3 is less than 5 μm, the adhesive force between the semiconductor chip and the lead frame, wiring board, etc. may be insufficient. On the other hand, if the thickness of the die-bonding film (adhesive layer) 3 is larger than 200 μm, it will not be economical, and it will likely be insufficient to cope with the miniaturization and thinning of semiconductor devices. In addition, in terms of high adhesiveness and the ability to reduce the thickness of the semiconductor device, the thickness of the film adhesive is more preferably in the range of 10 μm or more and 100 μm or less, particularly preferably in the range of 20 μm or more and 75 μm or less.

(Method for manufacturing die bond film)
The die-bonding film (adhesive layer) 3 is manufactured, for example, as follows. First, prepare the release liner. Note that the same release liner as the release liner disposed on the adhesive layer 2 of the dicing tape 10 can be used. Next, a coating solution for the die bond film (adhesive layer) 3, which is a forming material of the die bond film (adhesive layer) 3, is prepared. The coating solution includes, for example, a glycidyl group-containing (meth)acrylic acid ester copolymer, an epoxy resin, a curing agent for the epoxy resin, an inorganic filler, and a curing accelerator, which are the constituent components of the die-bonding film (adhesive layer) 3 as described above. It can be produced by uniformly mixing and dispersing a thermosetting resin composition containing a silane coupling agent, silane coupling, etc., and a diluting solvent. As the solvent, for example, general-purpose organic solvents such as methyl ethyl ketone and cyclohexanone can be used.

Next, a coating solution for the die bond film (adhesive layer) 3 is applied onto the release-treated surface of the release liner serving as a temporary support, dried, and a predetermined thickness of the die bond film (adhesive layer) is applied. ) form 3. Thereafter, the release-treated surface of another release liner is bonded onto the die-bonding film (adhesive layer) 3. The coating method is not particularly limited, and can be coated using, for example, a die coater, a comma coater (registered trademark), a gravure coater, a roll coater, a reverse coater, or the like. As for the drying conditions, for example, it is preferable that the drying temperature be within the range of 60° C. or more and 200° C. or less, and the drying time be within the range of 1 minute or more and 90 minutes or less. In the present invention, a laminate in which a release liner is provided on both sides or one side of the die-bonding film (adhesive layer) 3 may also be referred to as the die-bonding film (adhesive layer) 3.

(Method for manufacturing dicing die bond film)
The method for manufacturing the dicing die-bonding film 20 is not particularly limited, but it can be manufactured by a conventionally known method. For example, the dicing die bond film 20 is prepared by first preparing the dicing tape 10 and die bond film 3 separately, and then peeling off the release liner of the adhesive layer 2 of the dicing tape 10 and the release liner of the die bond film (adhesive layer) 3. Then, the adhesive layer 2 of the dicing tape 10 and the die-bonding film (adhesive layer) 3 may be bonded together by pressing, for example, with a pressure roll such as a hot roll laminator. The bonding temperature is not particularly limited, and is preferably in the range of 10°C or more and 100°C or less, and the bonding pressure (linear pressure) is, for example, in the range of 0.1 kgf/cm or more and 100 kgf/cm or less. It is preferable that there be. In the present invention, the dicing die bond film 20 may also be referred to as a laminate in which a release liner is provided on the adhesive layer 2 and the die bond film (adhesive layer) 3. In the dicing die bond film 20, the release liner provided on the adhesive layer 2 and the die bond film (adhesive layer) 3 may be peeled off when the dicing die bond film 20 is used for a work.

The dicing die-bonding film 20 may be wound into a roll or may be a stack of wide sheets. Further, the dicing tape 10 of these forms may be cut into a predetermined size to form a sheet or tape.

<Method for manufacturing semiconductor chips>
FIG. 5 illustrates a method for manufacturing a semiconductor chip with a die bond film using a dicing die bond film 20 in which a die bond film (adhesive layer) 3 is laminated on the adhesive layer 2 of the dicing tape 10 of the present embodiment. It is a flowchart. Further, in FIG. 6, a ring frame (wafer ring) 40 is placed on the outer edge of the dicing tape 10 (exposed part of the adhesive layer 2) of the dicing die bond film 20, and individual pieces are placed on the die bond film (adhesive layer) 3 in the center. FIG. 2 is a schematic diagram showing a state in which a semiconductor wafer (a plurality of semiconductor chips) is attached. Furthermore, FIGS. 7(a) to (f) show the grinding process of a semiconductor wafer in which a plurality of modified regions have been formed by laser beam irradiation, and the dicing die bond film of a plurality of cut semiconductor wafers (several semiconductor chips). 20 is a cross-sectional view showing an example of a bonding process to 20. FIG. FIGS. 8(a) to 8(f) show the process from expansion to pickup to obtain individual semiconductor chips with die bond films from a plurality of cut thin film semiconductor wafers laminated and held on the dicing die bond film 20. FIG. 2 is a cross-sectional view showing an example of a manufacturing method including a series of steps.

(Method for manufacturing semiconductor chips using dicing die bond film 20)
The method for manufacturing a semiconductor chip using the dicing die-bonding film 20 is not particularly limited, and may be any conventionally known method. Here, a manufacturing method using SDBG (Stealth Dicing Before Gridding) will be exemplified and explained. do.

First, as shown in FIG. 7A, a semiconductor wafer W having a plurality of integrated circuits (not shown) mounted on a first surface Wa of a semiconductor wafer W whose main component is silicon, for example, is prepared (FIG. step S201: preparation step). Then, a wafer processing tape (backgrind tape) T having an adhesive surface Ta is bonded to the first surface Wa side of the semiconductor wafer W.

Next, as shown in FIG. 7(b), while the semiconductor wafer W is held on the wafer processing tape T, the laser beam whose convergence point is aligned inside the wafer is directed to the side opposite to the wafer processing tape T. That is, the semiconductor wafer W is irradiated from the second surface Wb side of the semiconductor wafer along the lattice-shaped dicing line X, and a modified region 30b is formed in the semiconductor wafer W due to ablation caused by multiphoton absorption. is formed (step S202 in FIG. 5: modified region forming step). The modified region 30b is a weakened region for cutting and separating the semiconductor wafer W into semiconductor chips by a grinding process. A method of forming the modified region 30b along the planned dicing line by laser beam irradiation on the semiconductor wafer W is described in, for example, Japanese Patent No. 3408805, Japanese Unexamined Patent Publication No. 2002-192370, Japanese Unexamined Patent Publication No. 2003-338567, etc. Reference may be made to the disclosed method.

The dicing line X formed on the semiconductor wafer W may be a rectangular lattice. In that case, the semiconductor chip is diced into rectangular pieces. When the diced semiconductor chip is rectangular, the ratio α/β of the length α of the long side to the length β of the short side is preferably in the range of, for example, 1.2 or more and 20 or less. The lower limit of this ratio α/β is more preferably 1.4. Further, the lengths of the long side and the short side are preferably in the range of 1 mm or more and 30 mm or less, more preferably 3 mm or more and 20 mm or less, and even more preferably 4 mm or more and 12 mm or less.

Next, as shown in FIG. 7(c), with the semiconductor wafer W held on the wafer processing tape T, the semiconductor wafer W is ground from the second surface Wb until it reaches a predetermined thickness. The film is made thinner. Here, the thickness of the semiconductor wafer 30 to be thinned is preferably adjusted to 100 μm, more preferably 10 μm or more and 50 μm or less, from the viewpoint of making the semiconductor device thinner. In the main grinding/thinning process, when the semiconductor wafer 30 is thinned, when the grinding load of the grinding wheel is applied, the semiconductor wafer 30 starts from the modified region 30b formed in FIG. 7(b). A crack grows in the vertical direction, and the semiconductor chips 30a are cut into a plurality of semiconductor chips 30a on the wafer processing tape T along a cutting line 30c corresponding to the planned dicing line X.

Next, as shown in FIGS. 7(d) and 7(e), the plurality of semiconductor chips 30a held on the wafer processing tape T are bonded to the die bond film 3 of the separately prepared dicing die bond film 20 (see FIG. 5, step S204: bonding process). In this step, after peeling off the release liner from the adhesive layer 2 and the die bond film (adhesive layer) 3 of the dicing die bond film 20 cut into a circular shape, the dicing tape 10 of the dicing die bond film 20 is removed as shown in FIG. A ring frame (wafer ring) 40 is attached to the outer edge (exposed part of the adhesive layer 2), and a die bond film (adhesive layer) 3 is laminated on the upper center of the adhesive layer 2 of the dicing tape 10. A plurality of semiconductor chips 30a held by a wafer processing tape T are attached to the wafer processing tape T. Thereafter, as shown in FIG. 7F, the wafer processing tape T is peeled off from the plurality of thin film semiconductor chips 30a. The pasting is performed while being pressed by a pressing means such as a pressure roll. The bonding temperature is not particularly limited, and is preferably in the range of 20°C or more and 130°C or less, and from the viewpoint of reducing warpage of the semiconductor chip 30a, it should be in the range of 40°C or more and 100°C or less. is more preferable. The pasting pressure is not particularly limited, and is preferably in the range of 0.1 MPa or more and 10.0 MPa or less. The dicing tape 10 of the present invention also has a certain level of heat resistance, so even if the dicing tape 10 is applied at a high temperature, there will be no particular problem in its handling.

Subsequently, after the ring frame 40 is pasted on the adhesive layer 2 of the dicing tape 10 in the dicing die bond film 20, as shown in FIG. 8(a), the dicing die bond film 20 with the plurality of semiconductor chips 30a is is fixed to the holder 41 of the expanding device. As shown in FIG. 8(b), the thin film semiconductor wafer 30 (semiconductor chips 30a) cut along the cutting line 30c is cut on the lower surface of the thin film semiconductor wafer 30 (semiconductor chips 30a) so that it can be separated into pieces as a plurality of semiconductor chips 30a with die-bonding films. A die bond film 3 that will be cut along the dicing line X in the next step is attached to the side.

Next, a first expanding process under relatively low temperature conditions (for example, -30°C to 0°C), that is, a cool expanding process, is performed as shown in FIG. 8(c), and the dicing die bond film 20 The die bond film (adhesive layer) 3 is cut into small pieces of the die bond film (adhesive layer) 3a corresponding to the size of the semiconductor chip 30a, and the semiconductor chip 30a with the die bond film 3a is obtained (step S205 in FIG. 5). : cool expansion process). In this step, a hollow cylindrical push-up member (not shown) provided in the expanding device is brought into contact with the dicing tape 10 on the lower side of the dicing die bond film 20 and raised, and the semiconductor wafer 30 (semiconductor The dicing tape 10 of the dicing die-bonding film 20 to which the chips 30a) are bonded is expanded so as to be stretched in two-dimensional directions including the radial direction and the circumferential direction of the semiconductor wafer 30. Internal stress generated by pulling the dicing tape 10 in all directions due to cool expansion is transmitted as external stress to the die bond film 3 attached to the diced semiconductor wafer 30 (semiconductor chips 30a). Due to this external stress, the die bond film 3, which has become brittle at low temperature, is cut into small pieces of the die bond film 3a having the same size as the semiconductor chip 30a, thereby obtaining the semiconductor chip 30a with the die bond film 3a.

The temperature conditions in the cool expansion step are, for example, in the range of -30°C to 0°C, preferably in the range of -20°C to -5°C, more preferably in the range of -15°C to -5°C. It is particularly preferably -15°C. The expansion speed (the speed at which the hollow cylindrical push-up member rises) in the cool expansion step is preferably in the range of 0.1 mm/sec to 1000 mm/sec, more preferably 10 mm/sec to 300 mm/sec. range. Further, the amount of expansion (the height of the hollow cylindrical push-up member) in the cool expansion step is preferably in the range of 3 mm or more and 16 mm or less.

Here, in the dicing tape 10 of the present invention, the tensile strength at 100% stretching at 23°C in the MD direction of the base film 1 is adjusted to an appropriate range of 9 MPa or more and 18 MPa or less. The internal stress generated by pulling the dicing tape 10 in all directions due to cool expansion is transferred as external stress to the die bonding film 3 that is in close contact with the adhesive 2 on the base film 1. As a result, the die-bonding film 3 is cut cleanly and with a high yield along the shape of the individualized semiconductor chips.

After the cool expansion step, the hollow cylindrical push-up member of the expanding device is lowered, and the expanded state of the dicing tape 10 is released.

Next, a second expanding process under conditions of relatively high temperature (for example, 10°C to 30°C), that is, a normal temperature expanding process, is performed as shown in FIG. 8(d), and the die bond film (adhesive The distance (kerf width) between semiconductor chips 30a with layer 3a is increased. In this step, a cylindrical table (not shown) provided in the expanding device is brought into contact with the dicing tape 10 on the lower side of the dicing die-bonding film 20 and raised, and the dicing tape 10 of the dicing die-bonding film 20 is expanded (see FIG. Step S206 of Step 5: room temperature expansion step).

Here, the dicing tape 10 of the present invention has a tensile strength at 100% stretching at 23°C in the MD direction of the base film 1 adjusted to an appropriate range of 9 MPa or more and 18 MPa or less. have sex. Therefore, in the normal temperature expansion process, the interval (kerf width) between individual semiconductor chips with die bond films can be sufficiently widened during expansion.

By ensuring a sufficient distance (kerf width) between the semiconductor chips 30a with the die-bonding film (adhesive layer) 3a through the room-temperature expansion process, the recognition of the semiconductor chips 30a by a CCD camera, etc. is improved, and the adjacent semiconductor chips 30a are easily recognized when picked up. It is possible to prevent the semiconductor chips 30a with the die-bonding film (adhesive layer) 3a from being re-adhered to each other, which occurs when the semiconductor chips 30a come into contact with each other. As a result, the pick-up performance of the semiconductor chip 30a with the die-bonding film (adhesive layer) 3a is improved in the pick-up process described later.

The temperature conditions in the normal temperature expansion step are, for example, 10°C or higher, preferably in the range of 15°C or higher and 30°C or lower. The expansion speed (the speed at which the cylindrical table rises) in the room temperature expansion step is, for example, in the range of 0.1 mm/sec to 50 mm/sec, preferably in the range of 0.3 mm/sec to 30 mm/sec. . Further, the amount of expansion in the room temperature expansion step is, for example, in the range of 3 mm or more and 20 mm or less.

After the dicing tape 10 is expanded at room temperature by raising the table, the table vacuum-chucks the dicing tape 10. Then, the table is lowered together with the workpiece while the suction by the table is maintained, and the expanded state of the dicing tape 10 is released. In order to suppress narrowing of the kerf width of the semiconductor chip 30a with the die bonding film (adhesive layer) 3a on the dicing tape 10 after the expanded state is released, it is necessary to It is preferable to heat shrink the circumferential portion outside the semiconductor chip 30a holding area by blowing hot air to eliminate slack in the dicing tape 10 caused by expansion, thereby maintaining the dicing tape 10 in a tensioned state.

After the heat shrinkage, the vacuum suction state by the table is released. The temperature of the hot air may be adjusted depending on the physical properties of the base film 1, the distance between the hot air outlet and the dicing tape, the air volume, etc., and is preferably in the range of 200° C. or more and 250° C. or less, for example. Further, the distance between the hot air outlet and the dicing tape is preferably in a range of, for example, 15 mm or more and 25 mm or less. Further, the air volume is preferably in a range of, for example, 35 L/min or more and 45 L/min or less. Note that when performing the heat shrink process, the stage of the expanding device is rotated at a rotation speed in a range of, for example, 3°/second to 10°/second, and the circumference of the dicing tape 10 outside the semiconductor chip 30a holding area is rotated. Blow hot air along the area. By such hot air blowing, the temperature of the surface of the dicing tape 10 is preferably adjusted to a range of, for example, 60° C. or higher and 100° C. or lower. More preferably, the temperature is in the range of 70°C or higher and 90°C or lower.

Here, the dicing tape 10 of the present invention has a tensile strength at 100% stretching at 23° C. in the MD direction of the base film 1 in the range of 9 MPa or more and 18 MPa or less, while the tensile strength at 100% stretching at 23° C. Since the stress relaxation rate after holding for seconds is 50% or more, the stress generated in the base film 1 when the dicing tape 10 is expanded at room temperature is quickly reduced to a sufficiently low value, and the stress relaxation rate is within the above-mentioned appropriate range. Due to the tensile strength of the dicing tape, the expanded state can be maintained in the area where only the dicing tape (the area where no semiconductor chips with die bond films are present) corresponds to the interval (kerf width) between the individual semiconductor chips with die bond films that have been sufficiently expanded during room temperature expansion. When released, the elasticity reduces and alleviates the force of shrinkage. As a result, even if the expanded state is canceled, the kerf width may shrink to some extent, but it will not shrink excessively from the original spacing and can be maintained at a constant amount. Further, it is also possible to prevent damage to edges due to contact between adhesive layers attached to semiconductor chips or interference between semiconductor chips.

Furthermore, the dicing tape 10 of the present invention has a heat shrinkage rate of 20% or more after 100% stretching and holding for 100 seconds at 80°C in the MD direction of the base film 1. The thermal resistance of the adhesive layer 2 on the adhesive layer 1 is 0.45 K·cm ² /W or less. As a result, in the heat shrink process, in the heat shrink process, the slack part of the dicing tape 10 that occurs during room temperature expansion (the part outside the area where the plurality of cut semiconductor chips with die bond films are attached), When hot air is blown from the adhesive layer 2 side, the applied heat is efficiently transferred to the base film 1, so the loose parts are heated and shrunk in a shorter time than before, causing heat wrinkles. This makes it possible to remove slack without causing damage. As a result, even if the takt time of the heat shrink process is made shorter than before, it is possible to bring the slack part of the dicing tape 10 into a tensioned state where a predetermined tension is applied, and the adjacent die bond film (adhesive The kerf width widened by expansion can be sufficiently maintained to the extent that damage to the edges due to contact and re-adhesion of the adhesive layers and interference between semiconductor chips can be suppressed.

In this way, in the MD direction of the base film 1, the tensile strength at 100% stretching at 23°C, the stress relaxation rate after 100% stretching at 23°C for 100 seconds, and the stress relaxation rate after 100% stretching at 80°C and holding for 100 seconds. By setting the heat shrinkage rate of the adhesive layer 2 within a predetermined range and further setting the heat resistance of the adhesive layer 2 within a predetermined range, it is possible to suppress narrowing of the kerf width immediately after room temperature expansion, and to prevent the kerf width from becoming narrower in the heat shrink process after room temperature expansion. Because it is possible to heat-shrink the dicing tape sufficiently and uniformly in a shorter time than before, adjacent die bond films (adhesive layers) may come into contact with each other and re-adhere, and semiconductor chips may interfere with each other, causing edges to shrink. The width of the expanded kerf can be maintained sufficiently to the extent that damage to the kerf can be suppressed.

Next, by irradiating the dicing tape 10 with active energy rays from the base film 1 side, the adhesive layer 2 is cured and shrunk, and the adhesive force of the adhesive layer 2 to the die bond film 3a is reduced ( Step S207 in FIG. 5: active energy ray irradiation step). Here, the active energy rays used for the post-irradiation include ultraviolet rays, visible rays, infrared rays, electron beams, β rays, γ rays, and the like. Among these active energy rays, ultraviolet rays (UV) and electron beams (EB) are preferred, and ultraviolet rays (UV) are particularly preferably used. The light source for irradiating the ultraviolet rays (UV) is not particularly limited, but includes, for example, a black light, an ultraviolet fluorescent lamp, a low-pressure mercury lamp, a medium-pressure mercury lamp, a high-pressure mercury lamp, an ultra-high-pressure mercury lamp, a carbon arc lamp, a metal halide lamp, and a xenon lamp. A lamp etc. can be used. Furthermore, ArF excimer laser, KrF excimer laser, excimer lamp, synchrotron radiation, etc. can also be used. The amount of ultraviolet (UV) irradiation is not particularly limited, and is preferably in the range of 100 mJ/cm ² or more and 2,000 mJ/cm ² or less, and preferably in the range of 300 mJ/cm ² or more and 1,000 mJ/cm ² or less. It is more preferable that

Next, a so-called pick-up process is performed in which each of the diced semiconductor chips 30a with die-bonding films (adhesive layers) 3a is peeled off from the adhesive layer 2 of the dicing tape 10 after being irradiated with ultraviolet (UV) light (as shown in FIG. 5). Step S208: Peeling (pickup) step).

As shown in FIG. 8(e), for example, as shown in FIG. 60, and as shown in FIG. 8(f), the semiconductor chip 30a with the die bond film (adhesive layer) 3a that has been pushed up is suctioned by a suction collet 50 of a pickup device (not shown) to remove the dicing tape 10. Examples include a method of peeling off the adhesive layer 2. Thereby, a semiconductor chip 30a with a die bond film (adhesive layer) 3a is obtained.

The pickup conditions are not particularly limited as long as they are within a practically acceptable range, and the thrusting speed of the thrusting pin (needle) 60 is usually set within a range of 1 mm/sec to 100 mm/sec. However, if the thickness of the semiconductor chip 30a (thickness of the semiconductor wafer) is as thin as 100 μm, the speed should be set within the range of 1 mm/sec or more and 20 mm/sec or less from the viewpoint of suppressing damage to the thin film semiconductor chip 30a. It is preferable. From the viewpoint of productivity, it is more preferable that the speed can be set within a range of 5 mm/sec or more and 20 mm/sec or less.

Further, from the same viewpoint as described above, it is preferable that the push-up height of the push-up pins at which the semiconductor chip 30a can be picked up without being damaged can be set within a range of 100 μm or more and 600 μm or less. From the viewpoint of reduction, it is more preferable that the thickness can be set within a range of 100 μm or more and 450 μm or less. From the viewpoint of productivity, it is particularly preferable that the thickness can be set within the range of 100 μm or more and 350 μm or less. It can be said that a dicing tape that can reduce the push-up height has excellent pick-up properties.

The manufacturing method explained in FIGS. 8(a) to 8(f) is an example (SDBG) of the manufacturing method of the semiconductor chip 30a using the dicing die bond film 20, and the dicing tape 10 is used in the form of the dicing die bond film 20. The methods used are not limited to those described above. That is , the dicing die bond film 20 can be used without being limited to the above method as long as it can be attached to the semiconductor wafer 30 during dicing.

As described above, the dicing tape 10 of the present invention can be used as the dicing tape 10 to be integrated with the die bond film 3 and used as the dicing die bond film 20 in a manufacturing method for obtaining a thin film semiconductor chip such as DBG, stealth dicing, SDBG, etc. suitable.

<Method for manufacturing semiconductor devices>
A semiconductor device mounted with a semiconductor chip manufactured using a dicing die bond film 20 that is an integrated dicing tape 10 and a die bond film 3 to which this embodiment is applied will be specifically described below.

The semiconductor device (semiconductor package) is manufactured by, for example, bonding the semiconductor chip 30a with the die-bonding film (adhesive layer) 3a described above to a support member for mounting a semiconductor chip or a semiconductor chip by heat-pressing, and then a wire bonding process and a sealing process. It can be obtained through a process such as a sealing process using a material.

FIG. 9 shows an example of a semiconductor device with a laminated structure mounted with a semiconductor chip manufactured using a dicing die bond film 20 that integrates a dicing tape 10 and a wire-embedded die bond film 3 to which this embodiment is applied. FIG. 3 is a schematic cross-sectional view of an embodiment. The semiconductor device 70 shown in FIG. 9 includes a semiconductor chip mounting support substrate 4, cured die bond films (adhesive layers) 3a1 and 3a2, a first-stage semiconductor chip 30a1, a second-stage semiconductor chip 30a2, A sealing material 8 is provided. The semiconductor chip mounting support substrate 4, the cured die bond film 3a1, and the semiconductor chip 30a1 constitute a support member 9 for the semiconductor chip 30a2.

A plurality of external connection terminals 5 are arranged on one surface of the support substrate 4 for mounting a semiconductor chip, and a plurality of terminals 6 are arranged on the other surface of the support substrate 4 for mounting a semiconductor chip. The semiconductor chip mounting support substrate 4 has wires 7 for electrically connecting connection terminals (not shown) of the semiconductor chips 30a1 and 30a2 and the external connection terminals 5. The semiconductor chip 30a1 is bonded to the semiconductor chip mounting support substrate 4 by a hardened die bond film 3a1 in such a manner that the unevenness caused by the external connection terminals 5 is embedded. The semiconductor chip 30a2 is bonded to the semiconductor chip 30a1 by a hardened die bond film 3a2. The semiconductor chip 30a1, the semiconductor chip 30a2, and the wire 7 are sealed with a sealing material 8. In this way, the wire-embedded die bond film 3a is suitably used in a semiconductor device having a laminated structure in which a plurality of semiconductor chips 30a are stacked.

Further, FIG. 10 shows one aspect of another semiconductor device mounted with a semiconductor chip manufactured using a dicing die bond film 20 that integrates a dicing tape 10 and a general-purpose die bond film 3 to which this embodiment is applied. FIG. A semiconductor device 80 shown in FIG. 10 includes a semiconductor chip mounting support substrate 4, a hardened die bond film 3a, a semiconductor chip 30a, and a sealing material 8. The semiconductor chip mounting support substrate 4 is a support member for the semiconductor chip 30a, and connects connection terminals (not shown) of the semiconductor chip 30a and external connections arranged on the main surface of the semiconductor chip mounting support substrate 4. It has a wire 7 for electrically connecting it to a terminal (not shown). The semiconductor chip 30a is bonded to the semiconductor chip mounting support substrate 4 by a hardened die bond film 3a. The semiconductor chip 30a and the wires 7 are sealed with a sealing material 8.

The present invention will be explained in more detail with reference to the following examples, but the present invention is not limited thereto.

1. Production of Base Film 1 The following resins were prepared as materials for producing base films 1(a) to (x).

(Thermoplastic crosslinked resin (IO) consisting of an ionomer of ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid ester copolymer)
・Resin (IO1)
Ternary copolymer consisting of ethylene/methacrylic acid/2-methyl-propyl acrylate = 80/10/10 mass ratio, degree of neutralization with Zn ²⁺ ions: 60 mol%, melting point: 86°C, MFR: 1 g/ 10 minutes (190°C/2.16kg load), density: 0.96g/cm ³ , Vicat softening point: 56°C

・Resin (IO2)
Ternary copolymer consisting of ethylene/methacrylic acid/2-methyl-propyl acrylate = 80/10/10 mass ratio, degree of neutralization with Zn ²⁺ ions: 70 mol%, melting point: 87°C, MFR: 1 g/ 10 minutes (190°C/2.16kg load), density: 0.96g/cm ³ , Vicat softening point: 57°C

(Polyamide resin (PA))
・Resin (PA1)
Nylon 6, melting point: 225°C, density: 1.13g/ ^cm3

(Other resins (C))
・Resin (TPO)
Thermoplastic polyolefin elastomer (ethylene-α-olefin random copolymer), MFR: 3.6 g/10 min (190°C/2.16 kg load), density: 0.87 g/cm ³ , Vicat softening point: 41°C

・Resin (POPE)
Polyolefin-polyether block copolymer (polymer type antistatic agent), melting point: 115°C, MFR: 15g/10 minutes (190°C/2.16kg load)

・Resin (PP)
Random copolymerized polypropylene, melting point 138°C, Vicat softening point: 110°C

・Resin (LDPE)
Low density polyethylene, melting point 116℃, Vicat softening point: 97℃

・Resin (EVA)
Ethylene-vinyl acetate copolymer, vinyl acetate content 20% by mass, melting point 82°C, density: 0.94g/cm ³ , Vicat softening point: 53°C

・Resin (TPU)
thermoplastic polyurethane

(Base film 1(a))
(IO1) was prepared as a thermoplastic crosslinked resin (IO) consisting of an ionomer, and (PA1) was prepared as a polyamide resin (PA). First, the thermoplastic crosslinked resin (IO1) made of the above ionomer and the above polyamide resin (PA1) were dry blended at a mass ratio of (IO1):(PA1)=90:10. Next, the dry blended mixture was charged into the resin inlet of a twin-screw extruder and melt-kneaded at a die temperature of 230°C to obtain a resin composition for base film 1(a). The obtained resin composition was put into each extruder using a 3-layer T-die film molding machine of 1 type (same resin) and molded at a processing temperature of 240°C to form a 3-layer structure of the same resin. A base film 1(a) having a thickness of 90 μm was produced. The thickness of each layer was 1st resin layer (side in contact with adhesive layer 2)/2nd resin layer/3rd resin layer=30 μm/30 μm/30 μm. The mass ratio of the total amount of thermoplastic crosslinked resin (IO) consisting of an ionomer and the total amount of polyamide resin (PA) in the entire layer is: total amount of (IO): total amount of (PA) = 90:10.

(Base film 1(b))
The thermoplastic crosslinked resin (IO1) consisting of the above ionomer and the above polyamide resin (PA1) were dry blended at a mass ratio of (IO1):(PA1)=85:15. Similarly, a base film 1(b) with a thickness of 90 μm and having a three-layer structure made of the same resin composition was produced. The thickness of each layer was 1st resin layer (side in contact with adhesive layer 2)/2nd resin layer/3rd resin layer=30 μm/30 μm/30 μm. The mass ratio of the total amount of thermoplastic crosslinked resin (IO) consisting of an ionomer and the total amount of polyamide resin (PA) in the entire layer is: total amount of (IO): total amount of (PA) = 85:15.

(Base film 1(c))
The thermoplastic crosslinked resin (IO1) made of the ionomer and the polyamide resin (PA1) were dry blended at a mass ratio of (IO1):(PA1)=80:20, except that the base film 1(a) and Similarly, a base film 1(c) with a thickness of 90 μm and having a three-layer structure made of the same resin composition was produced. The thickness of each layer was 1st resin layer (side in contact with adhesive layer 2)/2nd resin layer/3rd resin layer=30 μm/30 μm/30 μm. The mass ratio of the total amount of thermoplastic crosslinked resin (IO) consisting of an ionomer and the total amount of polyamide resin (PA) in the entire layer is: total amount of (IO): total amount of (PA) = 80:20.

(Base film 1(d))
The thermoplastic crosslinked resin (IO) consisting of the above ionomer (IO1), the polyamide resin (PA) (PA1), and the other resin (C) include a thermoplastic polyolefin elastomer (ethylene-α-olefin random copolymer) (TPO). ) was prepared. First, as resins for the first resin layer and the third resin layer, the thermoplastic crosslinked resin (IO1) made of the above ionomer and the above polyamide resin (PA1) were used at a mass ratio of (IO1):(PA1)=85:15. It was dry blended. Next, the dry blended mixture is introduced into the resin inlet of the twin-screw extruder and melt-kneaded at a die temperature of 230°C to form the first and third resin layers of the base film 1(d). A resin composition was obtained.

Further, as the resin for the second resin layer, the above thermoplastic polyolefin elastomer (ethylene-α-olefin random copolymer) = (TPO) was used alone. The respective resin compositions and resins were put into respective extruders using a 2-type (2 types of resin) 3-layer T-die film molding machine, and molded at a processing temperature of 240°C. A base film 1(d) having a three-layer structure and having a thickness of 90 μm was produced using the composition. The thickness of each layer was 1st resin layer (side in contact with adhesive layer 2)/2nd resin layer/3rd resin layer=30 μm/30 μm/30 μm. The mass ratio of the total amount of thermoplastic crosslinked resin (IO) consisting of an ionomer and the total amount of polyamide resin (PA) in the entire layer is: total amount of (IO): total amount of (PA) = 85:15. Further, the total content of resin (IO) and resin (PA) in the entire layer was 67% by mass.

(Base film 1(e))
(IO1) and (IO2) were prepared as thermoplastic crosslinked resins (IO) comprising the above ionomer, and (PA1) were prepared as polyamide resin (PA). First, as resins for the first resin layer and the third resin layer, the thermoplastic crosslinked resin (IO1) made of the above ionomer and the above polyamide resin (PA1) were used at a mass ratio of (IO1):(PA1)=90:10. It was dry blended. Next, the dry blended mixture is introduced into the resin inlet of the twin-screw extruder and melt-kneaded at a die temperature of 230°C to form the first and third resin layers of the base film 1(e). A resin composition was obtained. Further, as the resin for the second resin layer, the thermoplastic crosslinked resin (IO2) made of the above-mentioned ionomer was used alone. The respective resin compositions and resins were put into respective extruders using a 2-type (2 types of resin) 3-layer T-die film molding machine, and molded at a processing temperature of 240°C. A base film 1(e) having a three-layer structure and having a thickness of 90 μm was produced using the composition. The thickness of each layer was 1st resin layer (side in contact with adhesive layer 2)/2nd resin layer/3rd resin layer=30 μm/30 μm/30 μm. The mass ratio of the total amount of thermoplastic crosslinked resin (IO) consisting of an ionomer and the total amount of polyamide resin (PA) in the entire layer is: total amount of (IO): total amount of (PA) = 93:7.

(Base film 1(f))
The thermoplastic crosslinked resin (IO) consisting of the above ionomer (IO1), the polyamide resin (PA) (PA1), and the other resin (C) include a thermoplastic polyolefin elastomer (ethylene-α-olefin random copolymer) (TPO). ) and polyolefin-polyether block copolymer (POPE) were prepared. First, as resins for the first resin layer and the second resin layer, the thermoplastic crosslinked resin (IO1) made of the above ionomer and the above polyamide resin (PA1) were used at a mass ratio of (IO1):(PA1)=90:10. It was dry blended. Next, the dry blended mixture is introduced into the resin inlet of the twin-screw extruder and melt-kneaded at a die temperature of 230°C to form the first and second resin layers of the base film 1 (g). A resin composition was obtained.

In addition, as the resin for the third resin layer, a thermoplastic crosslinked resin (IO1) consisting of an ionomer, a polyamide resin (PA1), a thermoplastic polyolefin elastomer (TPO), and a polyolefin-polyether block copolymer (POPE) were used, respectively. Dry blending was performed at a mass ratio of 76:8:8:8. Next, the dry blended mixture was charged into the resin inlet of the twin screw extruder and melt-kneaded at a die temperature of 230°C to obtain a resin composition for the third resin layer of the base film 1(f). Ta. Each resin composition was put into each extruder using a two-type (two types of resin) three-layer T-die film molding machine, and molded at a processing temperature of 240°C to form two types of resin compositions. A base film 1(f) having a three-layer structure and having a thickness of 80 μm was produced. The thickness of each layer was 1st resin layer (side in contact with adhesive layer 2)/2nd resin layer/3rd resin layer=30 μm/30 μm/20 μm. The mass ratio of the total amount of thermoplastic crosslinked resin (IO) consisting of an ionomer and the total amount of polyamide resin (PA) in the entire layer is: total amount of (IO): total amount of (PA) = 90:10. Further, the total content of resin (IO) and resin (PA) in the entire layer was 95% by mass.

(Base film 1 (g))
As other resins (C), random copolymerized polypropylene (PP) and ethylene-vinyl acetate copolymer (EVA) were prepared. Random copolymerized polypropylene (PP) was used for the first and third resin layers, and ethylene-vinyl acetate copolymer (EVA) was used for the second resin layer. Resin) A base film 1 (g) with a thickness of 80 μm and having a three-layer structure made of two types of resins was produced using a three-layer T-die film molding machine. The thickness of each layer was 1st resin layer (side in contact with adhesive layer 2)/2nd resin layer/3rd resin layer=8 μm/64 μm/8 μm. The mass ratio of PP/EVA in the entire layer is PP/EVA=20% by mass/80% by mass.

(Base film 1 (h))
As other resins (C), random copolymerized polypropylene (PP) and low density polyethylene (LDPE) were prepared. Random copolymerized polypropylene (PP) is used for the first resin layer and third resin layer, and low density ethylene (LDPE) is used for the second resin layer. Three layers of two types (two types of resin) of each resin are used. A base film 1 (h) with a thickness of 90 μm and having a three-layer structure made of two types of resins was produced using a T-die film molding machine. The thickness of each layer was 1st resin layer (side in contact with adhesive layer 2)/2nd resin layer/3rd resin layer=10 μm/70 μm/10 μm. The mass ratio of PP/LDPE for the entire layer is PP/LDPE=22% by mass/78% by mass.

(Base film 1(i))
(IO1) was prepared as a thermoplastic crosslinked resin (IO) consisting of the above ionomer, and ethylene-vinyl acetate copolymer (EVA) and thermoplastic polyurethane (TPU) were prepared as other resins (C). First, as a resin for the second resin layer, the thermoplastic crosslinked resin (IO1) made of the above ionomer and the above thermoplastic polyurethane (TPU) were dry blended at a mass ratio of (IO1):(TPU) = 50:50. . Next, the dry blended mixture was charged into the resin inlet of the twin-screw extruder and melt-kneaded to obtain a resin composition for the second resin layer of the base film 1(i). Further, the above ethylene-vinyl acetate copolymer (EVA) was used alone as the resin for the first resin layer and the third resin layer. The respective resins and resin compositions were put into respective extruders using a two-type (two-type resin) three-layer T-die film molding machine, and a three-layer structure made of two types of resin compositions was formed with a thickness of 90 μm. A base film 1(f) was prepared. The thickness of each layer was 1st resin layer (side in contact with adhesive layer 2)/2nd resin layer/3rd resin layer=30 μm/30 μm/30 μm. The mass ratio of EVA/IO/TPU as a whole layer is EVA/IO/TPU=67% by mass/16.5/16.5% by mass.

[Tensile strength of base film]
The tensile strength of the base film 1 at 100% stretching at 23° C. was measured by the following method. First, a test piece having a length of 100 mm (MD direction) and a width of 10 mm (TD direction) was prepared as a sample for MD direction measurement (number of samples N=5). Next, under a temperature condition of 23°C, using a tensile compression tester (model: MinebeaTechnoGraph TG-5kN) manufactured by MinebeaMitsumi Co., Ltd., both ends of the test piece in the length direction were tested so that the initial distance between the chucks was 50 mm. It was fixed with a chuck and subjected to a tensile test at a speed of 300 mm/min, and the tensile load-elongation curve was measured. Then, from the obtained tensile load-elongation curve, the tensile load value at 100% elongation (distance between chucks 100 mm) is determined, and the value is divided by the thickness of the base film 1 to obtain the tensile strength (unit: MPa) was calculated. Measurements were performed with the number of samples N=5, and the average value was taken as the tensile strength at 100% stretching in the MD direction at 23°C.

[Stress relaxation rate of base film]
The stress relaxation rate of the base film 1 after being stretched at 100% and held for 100 seconds at 23° C. was measured by the following method. First, a test piece having a length of 100 mm (MD direction) and a width of 10 mm (TD direction) was prepared as a sample for MD direction measurement (number of samples N=5). Next, under a temperature condition of 23°C, using a tensile compression tester (model: MinebeaTechnoGraph TG-5kN) manufactured by MinebeaMitsumi Co., Ltd., both longitudinal ends of the test piece were tested so that the initial distance between the chucks was 50 mm. Fix with a chuck and perform a tensile test at a speed of 300 mm/min, tensile load value A when stretched 100%, and tensile load value B after holding for 100 seconds with the 100% stretching strain applied. I asked for And the following formula

Stress relaxation rate (%) after 100% stretching and holding for 100 seconds = [(AB)/A] x 100
The stress relaxation rate after 100% stretching and holding for 100 seconds was calculated. Measurements were performed with the number of samples N=5, and the average value was taken as the stress relaxation rate after 100% stretching and holding for 100 seconds at 23° C. in the MD direction.

[Heat shrinkage rate of base film]
The heat shrinkage rate of the base film 1 after 100% stretching and holding for 100 seconds at 80° C. was measured by the following method. First, prepare a test piece with a length of 100 mm (MD direction) and a width of 10 mm (TD direction) as a sample for MD direction measurement (number of samples N = 5), and mark it with two marked lines at an interval of 50 mm. did. Next, under a temperature condition of 23°C, using a tensile compression tester (model: MinebeaTechnoGraph TG-5kN) manufactured by MinebeaMitsumi Co., Ltd., both longitudinal ends of the test piece were measured with an initial distance of 50 mm between chucks (initial gauge line). Fix it with a chuck so that the distance between The distance C was measured. Next, the chuck at the lower end was opened to make the test piece of the base film 1 tension-free, and it was placed in a constant temperature bath (model: THB-A13-038) manufactured by MinebeaMitsumi Co., Ltd. at 80°C for 1 minute. After heating, the distance D between the marked lines was measured again. And the following formula

Heat shrinkage rate (%) after 100% stretching and holding for 100 seconds = [(CD)/C] x 100

The heat shrinkage rate after 100% stretching and holding for 100 seconds was calculated. Measurements were performed with the number of samples N=5, and the average value was taken as the heat shrinkage rate after 100% stretching and holding for 100 seconds at 80° C. in the MD direction.

2. Preparation of adhesive composition solution
Solutions of the following active energy ray-curable acrylic adhesive compositions 2(a) to 2(g) were prepared as adhesive compositions for the adhesive layer 2 of the dicing tape 10.

In addition, as a copolymerization monomer component constituting the base polymer (acrylic acid ester copolymer) of these adhesive compositions,
・2-ethylhexyl acrylate (2-EHA, molecular weight: 184.3, Tg: -70°C),
・2-hydroxyethyl acrylate (2-HEA, molecular weight: 116.12, Tg: -15°C),
・Methacrylic acid (MAA, molecular weight: 86.06, Tg: 228°C),
prepared.

In addition, as a polyisocyanate crosslinking agent, a TDI type polyisocyanate crosslinking agent manufactured by Tosoh Corporation (trade name: Coronate L-45E, solid content concentration: 45% by mass, isocyanate group content in solution: 8. 05% by mass, isocyanate group content in solid content: 17.89% by mass, calculated number of isocyanate groups: average 2.8 pieces/1 molecule, theoretical molecular weight: 656.64),

・HDI-based polyisocyanate crosslinking agent (trade name: Coronate HL, solid content concentration: 75% by mass, isocyanate group content in solution: 12.8% by mass, isocyanate group content in solid content: 17.07 Mass %, calculated number of isocyanate groups: average 2.6/1 molecule, theoretical molecular weight: 638.75),
prepared.

(Solution of active energy ray-curable acrylic adhesive composition 2(a))
As copolymerization monomer components, 2-ethylhexyl acrylate (2-EHA), 2-hydroxyethyl acrylate (2-HEA), and methacrylic acid (MAA) were prepared. These copolymerization monomer components were mixed into 2-EHA/2-HEA/MAA=78.5 parts by mass/21.0 parts by mass/0.5 parts by mass (=425.94 mmol/180.85 mmol/5.81 mmol). A base polymer having a hydroxyl group (acrylic ester copolymer ) solution was synthesized. The Tg of the obtained base polymer calculated from the Fox equation is -60°C.

Next, to 100 parts by mass of the solid content of this base polymer, an active energy ray-reactive compound manufactured by Showa Denko K.K. was added with an isocyanate group and an active energy ray-reactive carbon-carbon double bond (manufactured by Showa Denko K.K.). 2-Isocyanate ethyl methacrylate (trade name: Karenz MOI, molecular weight: 155.15, isocyanate group: 1 piece/1 molecule, double bond group: 1 piece/1 molecule) 21.0 parts by mass (135.35 mmol: 74.8 mol% based on 2-HEA) and reacted with a part of the hydroxyl groups of 2-HEA to form a solution of acrylic adhesive polymer (A) having a carbon-carbon double bond in the side chain ( Solid content concentration: 50% by mass, weight average molecular weight Mw: 400,000, molecular weight distribution (Mw/Mn): 9.5, solid content hydroxyl value: 21.1 mgKOH/g, solid content acid value: 2.7 mgKOH/g, Carbon-carbon double bond content: 1.12 mmol/g) was synthesized. In the above reaction, 0.05 parts by mass of hydroquinone monomethyl ether was used as a polymerization inhibitor to maintain the reactivity of the carbon-carbon double bond.

Subsequently, IGM Resins B. V. 2.0 parts by mass of an α-hydroxyalkylphenone photopolymerization initiator (trade name: Omnirad 184) manufactured by IGM Resins B. V. 0.4 parts by mass of an acylphosphine oxide photopolymerization initiator (trade name: Omnirad 819) manufactured by Tosoh Corporation; Solid content concentration: 45% by mass) was blended at a ratio of 2.56 parts by mass (1.15 parts by mass in terms of solid content, 1.75 mmol), diluted with ethyl acetate and stirred to obtain a solid content concentration of 22% by mass. A solution of active energy ray-curable acrylic adhesive composition 2(a) was prepared.

(Solution of active energy ray-curable acrylic adhesive composition 2(b))
As copolymerization monomer components, 2-ethylhexyl acrylate (2-EHA), 2-hydroxyethyl acrylate (2-HEA), and methacrylic acid (MAA) were prepared. These copolymerization monomer components were mixed into 2-EHA/2-HEA/MAA=78.5 parts by mass/21.0 parts by mass/0.5 parts by mass (=425.94 mmol/180.85 mmol/5.81 mmol). Living radical polymerization (solution polymerization) was performed using ethyl acetate as a solvent and ethyl 2-methyl-2-n-butylterranyl-propionate and azobisisobutyronitrile (AIBN) as an initiator. A solution of a base polymer (acrylic acid ester copolymer) having a hydroxyl group was synthesized. The Tg of the obtained base polymer calculated from the Fox equation is -60°C.

Next, to 100 parts by mass of the solid content of this base polymer, an active energy ray-reactive compound manufactured by Showa Denko K.K. was added with an isocyanate group and an active energy ray-reactive carbon-carbon double bond (manufactured by Showa Denko K.K.). 2-Isocyanate ethyl methacrylate (trade name: Karenz MOI, molecular weight: 155.15, isocyanate group: 1 piece/1 molecule, double bond group: 1 piece/1 molecule) 21.0 parts by mass (135.35 mmol: 74.8 mol% based on 2-HEA) and reacted with some of the hydroxyl groups of 2-HEA to form a solution of acrylic adhesive polymer (B) having a carbon-carbon double bond in the side chain ( Solid content concentration: 50% by mass, weight average molecular weight Mw: 410,000, molecular weight distribution (Mw/Mn): 1.8, solid content hydroxyl value: 21.1 mgKOH/g, solid content acid value: 2.7 mgKOH/g, Carbon-carbon double bond content: 1.12 mmol/g) was synthesized. In the above reaction, 0.05 parts by mass of hydroquinone monomethyl ether was used as a polymerization inhibitor to maintain the reactivity of the carbon-carbon double bond.

Subsequently, IGM Resins B. V. 2.0 parts by mass of an α-hydroxyalkylphenone photopolymerization initiator (trade name: Omnirad 184) manufactured by IGM Resins B. V. 0.4 parts by mass of an acylphosphine oxide photopolymerization initiator (trade name: Omnirad 819) manufactured by Tosoh Corporation; Solid content concentration: 45% by mass) was blended at a ratio of 2.56 parts by mass (1.15 parts by mass in terms of solid content, 1.75 mmol), diluted with ethyl acetate and stirred to obtain a solid content concentration of 22% by mass. A solution of active energy ray-curable acrylic adhesive composition 2(b) was prepared.

(Solution of active energy ray-curable acrylic adhesive composition 2(c))
As copolymerization monomer components, 2-ethylhexyl acrylate (2-EHA), 2-hydroxyethyl acrylate (2-HEA), and methacrylic acid (MAA) were prepared. These copolymerization monomer components were mixed into 2-EHA/2-HEA/MAA=78.5 parts by mass/21.0 parts by mass/0.5 parts by mass (=425.94 mmol/180.85 mmol/5.81 mmol). A base polymer having a hydroxyl group (acrylic ester copolymer ) solution was synthesized. The obtained base polymer (acrylic adhesive polymer) has a Tg of -60° C., a weight average molecular weight Mw of 400,000, and a molecular weight distribution (Mw/Mn) of 9.5, as calculated by Fox's formula.

Next, based on 100 parts by mass of the solid content of this base polymer, 120 parts by mass of an ultraviolet curable urethane acrylate oligomer (weight average molecular weight Mw: 1,000, hydroxyl value: 1 mgKOH /g, double bond equivalent: 167), IGM Resins B.I. is used as a photopolymerization initiator. V. 1.0 parts by mass of an α-aminoalkylphenone photopolymerization initiator (trade name: Omnirad 369) manufactured by Tosoh Corporation, and an isocyanate crosslinking agent manufactured by Tosoh Corporation (trade name: Coronate L-45, solid content concentration: 45% by mass) at a ratio of 11.1 parts by mass (5.0 parts by mass in terms of solid content), diluted with ethyl acetate and stirred to obtain an active energy ray-curable acrylic system with a solid content concentration of 22% by mass. A solution of adhesive composition 2(c) was prepared.

(Solution of active energy ray-curable acrylic adhesive composition 2(d))
As copolymerization monomer components, 2-ethylhexyl acrylate (2-EHA), 2-hydroxyethyl acrylate (2-HEA), and methacrylic acid (MAA) were prepared. These copolymerization monomer components were mixed into 2-EHA/2-HEA/MAA=78.5 parts by mass/21.0 parts by mass/0.5 parts by mass (=425.94 mmol/180.85 mmol/5.81 mmol). Living radical polymerization (solution polymerization) was performed using ethyl acetate as a solvent and ethyl 2-methyl-2-n-butylterranyl-propionate and azobisisobutyronitrile (AIBN) as an initiator. A solution of a base polymer (acrylic acid ester copolymer) having a hydroxyl group was synthesized. The obtained base polymer had a Tg calculated from the Fox equation of -60°C, a weight average molecular weight Mw of 410,000, and a molecular weight distribution (Mw/Mn) of 1.8.

Next, based on 100 parts by mass of the solid content of this base polymer, 120 parts by mass of an ultraviolet curable urethane acrylate oligomer (weight average molecular weight Mw: 1,000, hydroxyl value: 1 mgKOH /g, double bond equivalent: 167), IGM Resins B.I. is used as a photopolymerization initiator. V. 1.0 parts by mass of an α-aminoalkylphenone photopolymerization initiator (trade name: Omnirad 369) manufactured by Tosoh Corporation, and an isocyanate crosslinking agent manufactured by Tosoh Corporation (trade name: Coronate L-45, solid content concentration: 45% by mass) at a ratio of 11.1 parts by mass (5.0 parts by mass in terms of solid content), diluted with ethyl acetate and stirred to obtain an active energy ray-curable acrylic system with a solid content concentration of 22% by mass. A solution of adhesive composition 2(d) was prepared.

(Solution of active energy ray-curable acrylic adhesive composition 2(e))
Aluminum oxide (average particle diameter: 1.2 μm, true specific gravity: 3.95) was added as a thermally conductive filler to the solution of the active energy ray-curable acrylic adhesive composition 2(b) at a volume ratio of 20 μm. %, active energy ray-curable acrylic adhesive except that an amphoteric dispersant (manufactured by BYK Chemie, trade name "DISPERBYK145") was further blended at 2.34 parts by mass with respect to the thermally conductive filler and stirred. A solution of active energy ray-curable acrylic adhesive composition 2(e) having a solid content concentration of 22% by mass was prepared in the same manner as the preparation of the solution of agent composition 2(b). Dispersant (ampholytic dispersant): 2.34 parts

(Solution of active energy ray-curable acrylic adhesive composition 2(f))
Aluminum oxide (average particle size: 1.2 μm, true specific gravity: 3.95) was added as a thermally conductive filler at a volume ratio of 10 to the solution of the active energy ray-curable acrylic adhesive composition 2(b). %, active energy ray-curable acrylic adhesive except that an amphoteric dispersant (manufactured by BYK Chemie Co., Ltd., trade name "DISPERBYK145") was further blended at 2.34 parts by mass with respect to the thermally conductive filler and stirred. A solution of active energy ray-curable acrylic adhesive composition 2(f) having a solid content concentration of 22% by mass was prepared in the same manner as the preparation of the solution of agent composition 2(b).

(Solution of active energy ray-curable acrylic adhesive composition 2 (g))
Aluminum oxide (average particle diameter: 1.2 μm, true specific gravity: 3.95) was added as a thermally conductive filler at a volume ratio of 10 to the solution of the active energy ray-curable acrylic adhesive composition 2(d). %, active energy ray-curable acrylic adhesive except that an amphoteric dispersant (manufactured by BYK Chemie Co., Ltd., trade name "DISPERBYK145") was further blended at 2.34 parts by mass with respect to the thermally conductive filler and stirred. A solution of active energy ray-curable acrylic adhesive composition 2(g) having a solid content concentration of 22% by mass was prepared in the same manner as the preparation of the solution of agent composition 2(d).

[Heat resistance of adhesive layer]
The thermal resistance of the adhesive layer 2 was measured by the following method. First, on the release-treated side of a 38 μm thick release PET liner (manufactured by Nakamoto Pax Co., Ltd., trade name “NS-38+A”), apply the active energy ray-curable acrylic to a dry thickness of 100 μm. After applying a solution of the adhesive composition and drying the solvent by heating at a temperature of 100°C for 3 minutes, a 50 μm thick release PET liner (Nakamoto Pax Co., Ltd.) was placed on top of the adhesive layer. A pressure-sensitive adhesive sheet without a base material was prepared by overlapping the release-treated sides of the adhesive sheet (trade name: "NS-50-ZW" manufactured by Mimaki Co., Ltd., trade name "NS-50-ZW"). Thereafter, the adhesive sheet was stored at a temperature of 23° C. for 96 hours to crosslink and cure the adhesive layer. Next, the crosslinked and cured adhesive sheet without a base material was cut into a size of 150 mm in length and 50 mm in width to prepare an evaluation sample with only the adhesive layer from which the release PET liner was completely removed. 10 sheets were stacked to form a laminate consisting only of the adhesive layer with a total thickness of 1 mm, and a hot wire method was used to measure the thin film using a rapid thermal conductivity meter "QTM-500 (model)" manufactured by Kyoto Electronics Co., Ltd. The thermal conductivity λ of a laminate consisting only of the above-mentioned adhesive layer in combination with software was measured. Silicone resin, quartz, and zirconia were used as references for this measurement. And the following formula

Thermal resistance (K cm ² /W) = (L/100)/λ

From this, the thermal resistance of the adhesive layer 2 was calculated. Here, L is the actual thickness (unit: μm) of the adhesive layer 2 of the dicing tape 10. Measurements were performed with the number of samples N=3, and the average value was taken as the thermal resistance of the adhesive layer 2.

3. Preparation of Solutions of Adhesive Compositions Solutions of the following adhesive compositions 3(a) and 3(b) were prepared as adhesive compositions for the die bond film (adhesive layer) 3 of the dicing die bond film 20.

(Solution of adhesive composition 3(a))
A solution of the following adhesive composition 3(a) was prepared for use in a general-purpose die bond film. First, 54 parts by mass of a cresol novolac type epoxy resin (trade name: YDCN-700-10, epoxy equivalent weight 210, softening point 80°C) manufactured by Toto Kasei Co., Ltd. as a thermosetting resin, and a crosslinking agent manufactured by Mitsui Chemicals Co., Ltd. 46 parts by mass of phenol resin (trade name: Mirex XLC-LL, hydroxyl equivalent: 175, water absorption rate: 1.8%), silica manufactured by Nippon Aerosil Co., Ltd. (trade name: Aerosil R972, average particle size 0.5%) as an inorganic filler. Cyclohexanone was added as a solvent to a resin composition consisting of 32 parts by mass of 016 μm), stirred and mixed, and further dispersed for 90 minutes using a bead mill.

Next, 74 parts by mass of glycidyl group-containing (meth)acrylic acid ester copolymer 2 was added to the resin composition as a thermoplastic resin, and γ-ureidopropyltriethoxysilane (manufactured by GE Toshiba Corporation) was added as a silane coupling agent. (Product name: NUC A-1160) 5.0 parts by mass, 1.7 parts by mass of γ-ureidopropyltriethoxysilane (Product name: NUC A-189) manufactured by GE Toshiba Corporation, and Shikoku Kasei Co., Ltd. as a curing accelerator. Add 0.1 part by mass of 1-cyanoethyl-2-phenylimidazole (trade name: Curazole 2PZ-CN) manufactured by the company, stir and mix, filter through a 100 mesh filter, and vacuum degas to obtain a solid content concentration of 20 mass. A solution of % adhesive composition 3(d) was prepared. The content ratio of each resin component in the total amount of resin components (total mass of thermoplastic resin, thermosetting resin, and crosslinking agent) is: glycidyl group-containing (meth)acrylic acid ester copolymer: epoxy resin: phenol resin = 73.3 Mass %: 14.4 mass %: 12.3 mass %. Further, the content of the inorganic filler was 8.6% by mass based on the total amount of resin components.

(Solution of adhesive composition 3(b))
A solution of the following adhesive composition solution 3(b) was prepared for a wire-embedded die bond film. First, as a thermosetting resin, 26 parts by mass of bisphenol type epoxy resin (trade name: R2710, epoxy equivalent: 170, molecular weight: 340, liquid at room temperature) manufactured by Printec Co., Ltd., and cresol novolac type epoxy resin manufactured by Toto Kasei Co., Ltd. 36 parts by mass of resin (trade name: YDCN-700-10, epoxy equivalent: 210, softening point: 80°C), phenol resin manufactured by Mitsui Chemicals, Inc. (trade name: Mirex XLC-LL, hydroxyl equivalent: 175, softening) as a crosslinking agent point: 77°C, water absorption rate: 1% by mass, heating mass loss rate: 4% by mass) 1 part by mass, phenolic resin manufactured by Air Water Co., Ltd. (trade name: HE200C-10, hydroxyl equivalent: 200, softening point: 71°C, water absorption rate: 1% by mass, heating mass loss rate: 4% by mass) 25 parts by mass, phenolic resin manufactured by Air Water Co., Ltd. (trade name: HE910-10, hydroxyl equivalent: 101, softening point: 83°C) , water absorption rate: 1% by mass, heating mass reduction rate: 3% by mass) 12 parts by mass, silica filler dispersion manufactured by Admatex Co., Ltd. (trade name: SC2050-HLG, average particle size: 0.50 μm) as an inorganic filler 15 parts by mass, 14 parts by mass of silica filler dispersion (trade name: SC1030-HJA, average particle size: 0.25 μm) manufactured by Admatex Co., Ltd., silica manufactured by Nippon Aerosil Co., Ltd. (trade name: Aerosil R972, average particle Cyclohexanone was added as a solvent to a resin composition consisting of 1 part by mass (diameter: 0.016 μm), stirred and mixed, and further dispersed for 90 minutes using a bead mill.

Next, 7 parts by mass of the first glycidyl group-containing (meth)acrylic ester copolymer 3 and 9 parts by mass of the second glycidyl group-containing (meth)acrylic ester copolymer 3 were added to the resin composition as a thermoplastic resin. , 0.7 parts by mass of γ-ureidopropyltriethoxysilane (trade name: NUC A-1160) manufactured by GE Toshiba Corporation as a silane coupling agent, γ-ureidopropyltriethoxysilane (trade name: manufactured by GE Toshiba Corporation) : NUC A-189) 0.3 parts by mass and 0.03 parts by mass of 1-cyanoethyl-2-phenylimidazole (trade name: Curazole 2PZ-CN) manufactured by Shikoku Kasei Co., Ltd. as a curing accelerator were added and mixed with stirring. After filtering through a 100 mesh filter, vacuum degassing was performed to prepare a solution of adhesive composition 3(a) with a solid content concentration of 20% by mass. The content ratio of each resin component in the total amount of resin components (total mass of thermoplastic resin, thermosetting resin, and crosslinking agent) is: glycidyl group-containing (meth)acrylic acid ester copolymer: epoxy resin: phenol resin = 31.5 Mass %: 42.5 mass %: 26.0 mass %. Further, the content of the inorganic filler was 20.5% by mass based on the total amount of resin components.

[Measurement of shear viscosity of die bond film (adhesive layer) 3 at 80°C]
The shear viscosity at 80° C. of each die bond film (adhesive layer) 3 formed from solutions of adhesive compositions 3(a) and 3(b) was measured by the following method.

A laminate was prepared by laminating a plurality of die bond films (adhesive layer) 3 from which the release liner had been removed at 70° C. so that the total thickness was 200 to 210 μm. Next, the laminate was punched out in the thickness direction into a size of 10 mm x 10 mm to obtain a measurement sample. Subsequently, using a dynamic viscoelasticity device ARES (manufactured by Rheometric Scientific F.E.), a circular aluminum plate jig with a diameter of 8 mm was attached, and then a measurement sample was set. While applying 5% strain to the measurement sample at 35°C, the shear viscosity was measured while raising the temperature of the measurement sample at a heating rate of 5°C/min, and the shear viscosity value at 80°C was determined.

4. Production of dicing tape 10 and dicing die bond film 20 (Example 1)
The active energy ray curing was applied to the release-treated side of a 38 μm thick release PET liner (manufactured by Nakamoto Pax Co., Ltd., trade name “NS-38+A”) so that the thickness of the adhesive layer 2 after drying was 7 μm. After drying the solvent by applying a solution of the acrylic adhesive composition (a) and heating at a temperature of 100° C. for 3 minutes, the first layer of the base film 1(a) is applied onto the adhesive layer 2. The surfaces of the layer sides were bonded together to produce an original plate for the dicing tape 10. Thereafter, the original plate of the dicing tape 10 was stored at a temperature of 23° C. for 96 hours to crosslink and cure the adhesive layer 2.

Next, a solution of adhesive composition 3(a) for forming die bond film (adhesive layer) 3 was prepared, and a release PET liner (manufactured by Nakamoto Pax Co., Ltd., trade name "NS-38+A") with a thickness of 38 μm was prepared. A solution of the adhesive composition 3(a) is applied to the release-treated side so that the thickness of the dried die-bonding film (adhesive layer) 3 is 20 μm, and then heated at a temperature of 90° C. for 5 minutes. Subsequently, the solvent was dried by heating at a temperature of 140° C. in two steps for 5 minutes to produce a die bond film (adhesive layer) 3 provided with a release liner. Note that, if necessary, a protective film (for example, a polyethylene film, etc.) may be attached to the dry side of the die-bonding film (adhesive layer) 3.

Subsequently, the die bond film (adhesive layer) 3 provided with the release liner produced above was cut into a circular shape with a diameter of 335 mm together with the release liner, and the adhesive layer exposed surface (release The liner-free surface) was attached to the two adhesive layer surfaces of the dicing tape 10 from which the release liner had been peeled off. The bonding conditions were a temperature of 23° C., a speed of 10 mm/sec, and a linear pressure of 30 kgf/cm.

Finally, by cutting the dicing tape 10 into a circle with a diameter of 370 mm, a circular die bonding film (adhesive layer) 3 with a diameter of 335 mm is laminated on the upper center of the adhesive layer 2 of the circular dicing tape 10 with a diameter of 370 mm. A dicing die bond film 20 (DDF(a)) was prepared.

(Examples 2 to 6)
A dicing die bond film 20 (DDF ( b) to DDF(f)) were produced.

(Examples 7 to 10)
Dicing die bond films 20 (DDF (g) to DDF (j) ) was created.

(Examples 11 to 16)
A solution of active energy ray-curable acrylic adhesive composition 2(a) was added to a solution of active energy ray-curable acrylic adhesive compositions 2(b) to 2(g) shown in Tables 3 and 4, respectively. Dicing die bond films 20 (DDF(k) to DDF(p)) were produced in the same manner as in Example 1 except for the changes.

(Example 17)
A dicing die bond film 20 (DDF(q)) was produced in the same manner as in Example 14 except that the thickness of the adhesive layer 2 after drying was changed to 15 μm.

(Example 18)
All steps were carried out except that the solution of adhesive composition 3(a) was changed to the solution of adhesive composition 3(b) and the thickness of the die bond film (adhesive layer) 3 after drying was changed to 50 μm. A dicing die bond film 20 (DDF(r)) was produced in the same manner as in Example 1.

(Comparative Examples 1 to 3)
Dicing die bond film 20 (DDF(s) ~DDF(u)) was produced.

(Comparative Examples 4 to 6)
Dicing die bond films 20 (DDF(v) to DDF(x)) were prepared in the same manner as in Example 1 except that the thickness of the adhesive layer 2 after drying was changed to the thickness shown in Tables 6 and 7. ) was created.

5. Evaluation of dicing tape The dicing tapes 10 produced in Examples 1 to 18 and Comparative Examples 1 to 6 above were evaluated by the method shown below using dicing die bond films 20 (DDF(a) to DDF(x)). went.

5.1 Breakability of Die Bond Film (Adhesive Layer) First, a semiconductor wafer (silicon mirror wafer, thickness 750 μm, outer diameter 12 inches) W was prepared, and a commercially available backgrind tape was attached to one surface. Next, a stealth dicing laser saw (equipment name: DFL7361) manufactured by DISCO Co., Ltd. was used to cut the semiconductor wafer W from the side opposite to the side to which the backgrind tape was attached, until the size of the semiconductor chips 30a after cutting was 4. A modified region is formed at a predetermined depth position on the semiconductor wafer W by irradiating laser light along the lattice-shaped dicing lines under the following conditions so that the size is 7 mm x 7.2 mm. 30b was formed.

・Laser irradiation conditions (1) Laser oscillator type: semiconductor laser excitation Q-switch solid-state laser
(2) Wavelength: 1342nm
(3) Oscillation format: pulse
(4) Frequency: 90kHz
(5) Output: 1.7W
(6) Moving speed of semiconductor wafer mounting table: 700 mm/sec

Next, using a back grinding device (device name: DGP8761) manufactured by DISCO Co., Ltd., the semiconductor wafer W having a thickness of 750 μm and having the modified region 30b held on the back grinding tape is ground and thinned. As a result, semiconductor chips 30a having a thickness of 30 μm were obtained. Subsequently, the cutability of the die bond film (adhesive layer) was evaluated by performing a cool expand process using the following method. Specifically, the surface of the semiconductor chip 30a having a thickness of 30 μm opposite to the side to which the back grinding tape was attached was exposed by peeling off the release liner from the dicing die bond film 20 produced in each example and comparative example. The dicing die bond film 20 is laminated onto the semiconductor chip 30a using a laminating device manufactured by DISCO Co., Ltd. (device name: DFM2800) so that the die bond film 3 is in close contact with the semiconductor chip 30a at a lamination temperature of 70° C. and a lamination speed of 10 mm/sec. At the same time, a ring frame (wafer ring) 40 was attached to the exposed portion of the adhesive layer 2 at the outer edge of the dicing tape 10, and then the back grind tape was peeled off. Here, the dicing die-bonding film 20 is arranged in the MD direction of the base film 1 and in the vertical line direction of the lattice-like dividing line of the semiconductor chip 30a (TD direction of the base film 1 and the lattice-like dividing line of the semiconductor chip 30a). It is attached to the semiconductor chip 30a so that the horizontal line direction of the lines coincides with each other.

A laminate (semiconductor wafer 30/die bond film 3/adhesive layer 2/base film 1) containing the semiconductor chip 30a held on the ring frame (wafer ring) 40 is expanded using an expanding device manufactured by DISCO Co., Ltd. (device name: DDS2300 Fully Automatic Die Separator). Next, the die bond film 3 was cut by cool expanding the dicing tape 10 (adhesive layer 2/base film 1) of the dicing die bond film 20 with the semiconductor chip 30a under the following conditions. Thereby, a semiconductor chip 30a with a die bond film (adhesive layer) 3 was obtained. In this example, the cool expansion process was carried out under the following conditions, but the expansion conditions ("expanding speed", "expanding amount", etc.) were adjusted as appropriate depending on the physical properties of the base film 1, temperature conditions, etc. A cool expansion process may be performed.

・Cool expansion process conditions Temperature: -15℃, Cooling time: 80 seconds,
Expanding speed: 300mm/sec,
Expand amount: 11mm,
(4) Standby time: 0 seconds

The cool-expanded die-bonding film (adhesive layer) 3 was observed from the surface side of the semiconductor chip 30a using an optical microscope (model: VHX-1000) manufactured by Keyence Corporation at a magnification of 200 times, and was then cut. I confirmed the gender. The number of sides that were not cut among the sides that were scheduled to be cut was counted. Then, from the total number of sides scheduled to be cut and the total number of uncut sides, the ratio of the number of cut sides to the total number of sides scheduled to be cut was calculated as a cutting rate (%). The observation using the optical microscope was performed on the entire surface of the die bond film 3. The breakability of the die-bonded film (adhesive layer) 3 was evaluated according to the following criteria, and an evaluation of B or higher was judged as having good breakability.

A: The fracture rate was 95% or more and 100% or less.
B: The fracture rate was 90% or more and less than 95%.
C: The fracture rate was 85% or more and less than 90%.
D: Fracture rate was less than 85%.

5.2 Evaluation of the degree of loosening of the dicing tape 10 after the heat shrink process After releasing the above cool expand state, the expander (equipment name: DDS2300 Fully Automatic Die Separator) manufactured by DISCO Co., Ltd. was used again. A room temperature expansion process was carried out using a heat expander unit under the following conditions.

・Condition temperature of room temperature expansion process: 23℃,
Expanding speed: 30mm/sec,
Expand amount: 9mm,
(4) Waiting time: 15 seconds

Next, while maintaining the expanded state, the dicing tape 10 was suctioned by a suction table, and the suction table was lowered together with the workpiece while maintaining the suction by the suction table. Then, a heat shrink process was performed under the following three conditions to heat shrink the circumferential portion of the dicing tape 10 outside the semiconductor chip 30a holding area. The surface temperature of the heated portion of the dicing tape 10 was 80°C.

・Conditions for heat shrink process [Condition 1]
(1) Hot air temperature: 200℃,
(2) Air volume: 40L/min,
(3) Distance between hot air outlet and dicing tape 10: 20 mm,
(4) Stage rotation speed: 7°/sec,

[Condition 2]
(1) Hot air temperature: 200℃,
(2) Air volume: 40L/min,
(3) Distance between hot air outlet and dicing tape 10: 20 mm,
(4) Stage rotation speed: 8°/sec,

[Condition 3]
(1) Hot air temperature: 200℃,
(2) Air volume: 40L/min,
(3) Distance between hot air outlet and dicing tape 10: 20 mm,
(4) Stage rotation speed: 9°/sec,

Subsequently, after releasing the dicing tape 10 from suction by the suction table, the workpiece is removed from the expanding device, placed on a flat rubber mat, and the semiconductor chip 30a holding area of the dicing tape 10 after heat shrinking is removed. The degree of elimination of slack in the outer circumferential portion was visually confirmed under a three-wavelength fluorescent lamp. The degree of elimination of slack for each of the dicing tapes 10 was evaluated according to the following criteria, and evaluations of B or higher were determined to indicate that the heat shrinkability was uniform and good.

A: No slack was observed.
B: Wrinkle-like loosening was observed in a small portion, but it was minor.
C: Wrinkle-like loosening or deformed wrinkles were clearly observed.

5.3 Evaluation of retention of kerf width of dicing tape 10 After the heat shrink process described above, the workpiece is removed from the expanding device, and the distance between adjacent semiconductor chips 30a (kerf width) is determined from the front surface side of the semiconductor wafer 30. The retention of the kerf width of the dicing tape 10 was evaluated by observing and measuring at a magnification of 200 times using an optical microscope (model: VHX-1000) manufactured by Keyence Corporation.

Specifically, four locations (MD direction of base film 1: kerf MD1 and kerf 7 of two cutting cross line parts formed by six adjacent semiconductor chips 30a in the left part 32 (two places in MD2, two places in TD direction of base film 1: kerf TD1 and kerf TD2, see FIG. 12), (MD direction: three locations from calf MD3 to calf MD5, TD direction: four locations from calf TD3 to calf TD6, not shown), two cutting crosses formed by six adjacent semiconductor chips 30a in the right portion 33 Seven places in the line part (MD direction: three places from calf MD6 to calf MD8, TD direction: four places from calf TD7 to calf TD10, not shown), and two parts formed by six adjacent semiconductor chips 30a in the upper part 34. At seven cutting cross line parts (MD direction: four places from calf MD9 to calf MD12, TD direction: three places from calf TD11 to calf TD13, not shown), and six adjacent semiconductor chips 30a in the lower part 35. Two cutting cross lines are formed at 7 locations (MD direction: 4 locations from calf MD13 to calf MD16, TD direction: 3 locations from calf TD14 to calf TD16, not shown), a total of 32 locations (16 locations in MD direction). 16 locations in the TD direction), the distance between adjacent semiconductor chips 30a is measured, and the average value of the 16 locations in the MD direction is defined as the MD direction kerf width, and the average value of the 16 locations in the TD direction is defined as the TD direction kerf width. Calculated. The retention of the kerf width of the dicing tape 10 in the dicing die-bonding film 20 was evaluated according to the following criteria, and an evaluation of B or higher was judged as having good retention of the kerf width.

A: Both the MD direction kerf width and TD direction kerf width were 30 μm or more.
B: The value of the kerf width in the MD direction is 30 μm or more and the value of the kerf width in the TD direction is 25 μm or more and less than 30 μm, or the value of the kerf width in the TD direction is 30 μm or more and the value of the kerf width in the MD direction is 25 μm or more and less than 30 μm. Or, both the MD direction kerf width and the TD direction kerf width were 25 μm or more and less than 30 μm.
C: Either the MD direction kerf width or the TD direction kerf width was less than 25 μm.

5.5 Evaluation Results For each of the dicing tapes 10 produced in Examples 1 to 18 and Comparative Examples 1 to 6, the above mounting evaluation was performed in the form of dicing die bond films 20 (DDF(a) to DDF(x)). The results are shown in Tables 1 to 7, together with the configurations of the dicing tape 10 and dicing die bond film 20, and the properties of the base film 1 and adhesive layer 2 used.

As shown in Tables 1 to 5, the dicing die bond films 20 (DDF(a) ～DDF(r)) has good breakability of the die-bond film 20 in the cool expansion process, suppresses the narrowing of the kerf width immediately after expansion at room temperature, and allows hot air to be cut in the heat shrink process after expansion at room temperature. Even when the rotation speed of the stage is increased during blowing to shorten the takt time, it is possible to uniformly heat and shrink the slack portions of the dicing tape 10, and the adjacent die bond films (adhesive layers) can be bonded together. It was confirmed that the kerf width widened during expansion was maintained to the extent that it was possible to suppress re-adhesion due to contact and damage to the edges of the semiconductor chip. Therefore, when the dicing tape 10 of the present invention is used in a semiconductor manufacturing process for manufacturing semiconductor chips and semiconductor devices with die bond films, they can be manufactured with high yield.

On the other hand, as shown in Tables 6 and 7, Comparative Examples 1 to 6 were prepared using dicing tapes 10 that did not satisfy at least one of the physical property values of the base film 1 and the thermal resistance requirements of the adhesive layer 2. Regarding the dicing die bond films 20 (DDF(s) to DDF(x)), evaluation was made of the breakability of the die bond film 3 in the cool expand process, the degree of loosening of the dicing tape 10 in the heat shrink process, and the retention of the kerf width. It was confirmed that the results were inferior to the dicing die bond films 20 (DDF(a) to DDF(r)) of Examples 1 to 18 in any of the following items.

1...Base film,
2...adhesive layer,
3, 3a1, 3a2...die bond film (adhesive layer),
4...Semiconductor chip mounting support substrate,
5...External connection terminal,
6...terminal,
10...Dicing tape,
20...Dicing die bond film,
W, 30... semiconductor wafer,
30a, 30a1, 30a2...semiconductor chip,
30b... modified region (broken region in FIGS. 7(c) to (f), FIGS. 8(a) and (b)),
31...center of semiconductor wafer,
32...Semiconductor wafer left side,
33...Semiconductor wafer right side,
34...Semiconductor wafer upper part,
35...lower part of semiconductor wafer,
40...Ring frame (wafer ring),
41... Holder,
50...Adsorption collet,
60... Push-up pin (needle),
70, 80... semiconductor device,
71, 81...Semiconductor chip mounting support substrate 72...External connection terminal,
73...terminal,
74, 84... wire,
75, 85... Sealing material,
76...Support member

Claims (5)

A dicing tape comprising a base film and an adhesive layer containing an active energy ray-curable adhesive composition on the base film,
The base film has, in the MD direction,
(1) Tensile strength at 100% stretching at 23°C of 9 MPa or more and 18 MPa or less,
(2) 50% or more, formula: Stress relaxation rate after 100% stretching and holding for 100 seconds (%) = [(AB)/A)] x 100 (1)
(In the formula, A is the tensile load when the base film is stretched 100% at 23°C, and B is the tensile load after the base film is stretched 100% at 23°C and held in that state for 100 seconds. (This is a tensile load.)
The stress relaxation rate after 100% stretching and holding for 100 seconds at 23°C, and (3) 20% or more, is expressed by the formula: Thermal shrinkage rate after 100% stretching and holding for 100 seconds (%) = [(C-D )/C]×100 (2)
(In the formula, C is the interval between the marked lines when the base film with marked lines attached at predetermined intervals is stretched 100% at 23°C and held in that state for 100 seconds, and D is the interval between the marked lines, A base film with marking lines attached at predetermined intervals is stretched 100% at 23°C, held in that state for 100 seconds, and then heated in a tension-free state at 80°C for 60 seconds to shrink it. (This is the interval between the marked lines after
Heat shrinkage rate after 100% stretching and holding for 100 seconds at 80°C, expressed as
has
The adhesive layer is
A dicing tape having a thermal resistance of 0.45K·cm ² /W or less. The base film is a resin composed of a resin composition containing a thermoplastic crosslinked resin (IO) made of an ionomer of an ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid ester copolymer and a polyamide resin (PA). is a film,
The dicing tape according to claim 1. The dicing tape according to claim 1, wherein the adhesive layer has a thermal resistance of 0.35 K·cm ² /W or less. The adhesive layer is
(1) An adhesive composition comprising an acrylic adhesive polymer having a photosensitive carbon-carbon double bond and a functional group, a photopolymerization initiator, and a crosslinking agent that reacts with the functional group;
(2) an adhesive composition further comprising a thermally conductive filler in the adhesive composition of (1);
(3) an adhesive composition comprising an acrylic adhesive polymer having a functional group, an active energy ray-curable compound, a photopolymerization initiator, and a crosslinking agent that reacts with the functional group;
(4) an adhesive composition further comprising a thermally conductive filler in the adhesive composition of (3);
Containing any one active energy ray-curable adhesive composition selected from the group consisting of
The dicing tape according to claim 1. A method for manufacturing a semiconductor chip and a semiconductor device, using the dicing tape according to any one of claims 1 to 4.