JP7409030B2 - Dicing/die bonding integrated film and its manufacturing method, and semiconductor device manufacturing method - Google Patents

Description

The present disclosure relates to a dicing/die bonding integrated film, a method for manufacturing the same, and a method for manufacturing a semiconductor device.

A semiconductor device is manufactured through the following steps. First, a dicing process is performed with a dicing adhesive film attached to a wafer. After that, an expanding process, a pickup process, a mounting process, a die bonding process, etc. are performed.

In the manufacturing process of semiconductor devices, a film called a dicing/die bonding integrated film is used. This film has a structure in which a base material layer, an adhesive layer, and an adhesive layer are laminated in this order, and is used, for example, as follows. First, the wafer is diced with the adhesive layer side surface attached to the wafer and the wafer fixed with a dicing ring. Thereby, the wafer is diced into a plurality of chips. Next, the adhesive force of the adhesive layer to the adhesive layer is weakened by irradiating the adhesive layer with active energy rays, and then the chip is attached to the adhesive together with the adhesive pieces obtained by dividing the adhesive layer into individual pieces. Pick up from layer. Thereafter, a semiconductor device is manufactured through a step of mounting the chip on a substrate or the like via an adhesive piece. Note that a laminate consisting of a chip obtained through the dicing process and an adhesive piece attached to the chip is called a DAF (Die Attach Film).

As mentioned above, the adhesive layer (dicing film) whose adhesive strength is weakened by irradiation with active energy rays is called an active energy ray-curable adhesive layer. On the other hand, an adhesive layer whose adhesive strength remains constant without being irradiated with active energy rays during the manufacturing process of a semiconductor device is called a pressure-sensitive adhesive layer. An integrated dicing/die bonding film with a pressure-sensitive adhesive layer eliminates the need for users (mainly semiconductor device manufacturers) to carry out the step of irradiating active energy rays, and also eliminates the need for equipment for this purpose. There is an advantage to having one. Patent Document 1 describes that while the adhesive layer can be said to be active energy ray-curable in that it contains a component that is cured by active energy rays, it is also known that only a predetermined portion of the adhesive layer is irradiated with active energy rays. A dicing/die bonding integrated film has been disclosed which can be said to be pressure sensitive in that the user does not need to irradiate active energy rays during the manufacturing process of semiconductor devices.

Patent No. 4443962

Generally, the adhesive layer of a dicing/die bonding integrated film is required to have low adhesive strength between the adhesive layers. If the adhesive strength is too high, a pick-up error may occur in the chip pick-up process, which may reduce yield. However, the present inventors found that when the chips to be produced by dicing become small (for example, an area of 0.1 to 9 mm ² in plan view), the pick-up performance of the chips is reduced due to the difference between the adhesive layers. It has been found that the peeling of the edge of the chip from the adhesive layer (hereinafter referred to as "edge peeling") is not necessarily a dominant factor in the adhesive force, but is a dominant factor in the pick-up property. In other words, the pick-up performance of small chips is mainly controlled by the edge peeling strength of the adhesive-attached chip, and once edge peeling occurs due to pushing up with a pin, the interfacial peeling between the adhesive layers is smooth. It is estimated that this will develop.

An example of an influencing factor on edge peel strength is curing shrinkage of the adhesive layer. Usually, after the dicing process, burrs (cutting debris) are generated by mixing the adhesive layer, the pressure-sensitive adhesive layer, the wafer, etc. on the dicing line. If the adhesive layer is of an active energy ray-curable type, there is a risk that the adhesive layer will be cured together with burrs (cutting chips) by irradiation with active energy rays, resulting in a significant increase in edge peel strength. If the adhesive layer is cured in advance before the dicing process, there is no need to carry out the process of irradiating active energy rays, so there is no such effect, but There is a risk that the edge peel strength will increase due to the anchor effect. The inventors of the present invention conducted extensive studies on curing shrinkage of the adhesive layer, and found that the magnitude of curing shrinkage tends to increase as the difference in adhesive strength between the adhesive layer before and after irradiation of the adhesive layer with active energy rays increases. I discovered something. Therefore, the present inventors investigated the difference between the adhesive strength of the adhesive layer before irradiation with active energy rays and the adhesive strength of the adhesive layer after irradiation with active energy rays (in other words, the difference in the adhesive strength of the adhesive layer before irradiation with active energy rays). We believe that the edge peel strength can be reduced by adjusting the difference between the adhesive strength of the adhesive layer and the adhesive strength of the adhesive layer in the area irradiated with active energy rays. Worked on the development of a die bonding integrated film.

The present disclosure is applicable to a semiconductor device manufacturing process that includes a step of singulating a wafer into a plurality of small chips (area: 0.1 to 9 mm ² ), and includes an adhesive layer with excellent pick-up properties. The main objective is to provide a dicing/die bonding integrated film and a method for manufacturing the same.

One aspect of the present disclosure relates to an integrated dicing and die bonding film. This film includes a base material layer, an adhesive layer made of an active energy ray-curable adhesive having a first surface facing the base material layer, and a second surface opposite to the first surface. an adhesive layer provided so as to cover the central part of the second surface, the adhesive layer having a first region including at least a region corresponding to the wafer attachment position in the adhesive layer; The first region has a lower adhesive force than the second region due to irradiation with active energy rays, and the first region has a temperature of 23° C. The adhesive force of the first region of the adhesive layer to the adhesive layer is F1 (N/25 mm), measured at a peel angle of 30° and a peeling speed of 60 mm/min at a peel angle of 30° and a temperature of 23°C. When the adhesive force of the second region of the adhesive layer to the adhesive layer measured at a peeling speed of 60 mm/min is F2 (N/25 mm), the difference between F2 and F1 (F2 - F1) is , 6.5-9.0N/25mm. This film is applied to a semiconductor device manufacturing process that includes the step of dividing a wafer into multiple chips with an area of 0.1 to 9 mm ² .

According to the above-mentioned dicing/die bonding integrated film, it is possible to suppress the curing shrinkage of the adhesive layer and reduce the edge peel strength, so that the wafer can be divided into multiple small chips (area 0.1 to 9 mm ² ). It is applicable to a semiconductor device manufacturing process that includes a step of singulating, and can achieve excellent pick-up properties from the adhesive layer.

The difference between F2 and F1 (F2-F1) may be 7.0 to 9.0 N/25 mm.

F1 (adhesive force of the first region to the adhesive layer, measured at a temperature of 23° C., a peeling angle of 30° and a peeling speed of 60 mm/min) can achieve better pick-up from the adhesive layer. From this point of view, it may be 1.1 to 4.5 N/25 mm or 1.1 to 3.0 N/25 mm.

The adhesive force of the second region of the adhesive layer to the stainless steel substrate may be 0.2 N/25 mm or more from the viewpoint of suppressing ring peeling in the dicing process. Note that this adhesive strength means peel strength measured at a temperature of 23° C., a peeling angle of 90°, and a peeling speed of 50 mm/min.

The active energy ray-curable adhesive may contain a (meth)acrylic resin having a functional group capable of chain polymerization. When such a (meth)acrylic resin is included, the functional group may be at least one selected from an acryloyl group and a methacryloyl group, and the content of the functional group in the (meth)acrylic resin is 0.1 It may be ~1.2 mmol/g.

The active energy ray-curable adhesive may further contain a crosslinking agent. When such a crosslinking agent is further included, the content of the crosslinking agent based on the total mass of the active energy ray-curable adhesive may be 0.1 to 15% by mass. The crosslinking agent may be a reaction product of a polyfunctional isocyanate having two or more isocyanate groups in one molecule and a polyhydric alcohol having three or more hydroxy groups in one molecule.

The dose of active energy rays may be 10 to 1000 mJ/cm ² .

The adhesive layer may be made of an adhesive composition containing a reactive group-containing (meth)acrylic copolymer, a curing accelerator, and a filler.

One aspect of the present disclosure relates to a method for manufacturing a dicing/die bonding integrated film. This manufacturing method includes the steps of producing a laminate including an adhesive layer made of an active energy ray-curable adhesive on the surface of a base material layer, and an adhesive layer formed on the surface of the adhesive layer. and irradiating active energy rays to a region to be the first region of the adhesive layer included in the laminate, in this order.

One aspect of the present disclosure relates to a method for manufacturing a semiconductor device. This manufacturing method includes the steps of preparing the dicing/die bonding integrated film, attaching the wafer to the adhesive layer of the dicing/die bonding integrated film, and dicing the wafer to the second surface of the adhesive layer. A process of attaching a ring, a process of singulating the wafer into multiple chips, a process of picking up the chips from the adhesive layer together with the adhesive pieces formed by dividing the adhesive layer into pieces, and a process of picking up the chips from the adhesive layer, and mounting the chip on a substrate or other chip.

That is, this manufacturing method includes a pressure-sensitive adhesive layer made of an active energy ray-curable pressure-sensitive adhesive having a base material layer, a first surface facing the base material layer, and a second surface opposite to the first surface. and an adhesive layer provided so as to cover the central part of the second surface of the adhesive layer; and an adhesive layer of the dicing and die bonding integrated film. A process of attaching a wafer to the adhesive layer and attaching a dicing ring to the second surface of the adhesive layer, a process of singulating the wafer into multiple chips, and adhesion formed by dividing the adhesive layer into pieces. picking up the chip from the adhesive layer with a piece of adhesive; and mounting the chip on a substrate or other chip via the adhesive piece, the adhesive layer being a wafer attached to the adhesive layer. the first region corresponds to the region to which the dicing ring is attached, and the second region corresponds to the region to which the dicing ring is attached; The adhesive force of the first region of the adhesive layer to the adhesive layer, which is the area where the adhesive force has decreased and is measured at a temperature of 23°C, a peeling angle of 30°, and a peeling speed of 60 mm/min, is defined as F1 ( F2 (N/25mm) was the adhesion force of the second region of the adhesive layer to the adhesive layer, measured at a temperature of 23°C, a peeling angle of 30°, and a peeling speed of 60 mm/min. At this time, the difference between F2 and F1 (F2-F1) is 6.5 to 9.0 N/25 mm.

According to the present disclosure, the adhesive layer can be applied to a semiconductor device manufacturing process that includes a process of singulating a wafer into a plurality of small chips (area: 0.1 to 9 mm ² ), and has excellent pick-up properties. Provided are a dicing/die bonding integrated film and a method for manufacturing the same. Further, according to the present disclosure, a method for manufacturing a semiconductor device using such a dicing/die bonding integrated film is provided.

FIG. 1(a) is a plan view showing one embodiment of a dicing/die bonding integrated film, and FIG. 1(b) is a schematic cross-sectional view taken along line BB shown in FIG. 1(a). be. FIG. 2 is a schematic diagram showing a state in which a dicing ring is attached to the peripheral edge of the adhesive layer of the dicing/die bonding integrated film, and a wafer is attached to the surface of the adhesive layer. FIG. 3 is a cross-sectional view schematically showing how the 30° peel strength of the adhesive layer with respect to the adhesive layer is measured. FIG. 4 is a schematic cross-sectional view of one embodiment of a semiconductor device. 5(a), 5(b), 5(c), and 5(d) are cross-sectional views schematically showing the process of manufacturing a DAF (a laminate of a chip and an adhesive piece). . FIG. 6 is a cross-sectional view schematically showing the process of manufacturing the semiconductor device shown in FIG. 4. FIG. 7 is a cross-sectional view schematically showing the process of manufacturing the semiconductor device shown in FIG. 4. FIG. 8 is a cross-sectional view schematically showing the process of manufacturing the semiconductor device shown in FIG. 4. FIG. 9A, FIG. 9B, and FIG. 9C are cross-sectional views schematically showing the process of measuring edge peel strength. FIG. 10 is a graph showing an example of the relationship between displacement (mm) due to pushing and pushing force (N). FIG. 11 is a plan view schematically showing a state in which a mark is attached to a position corresponding to the center of a chip to be measured.

Embodiments of the present disclosure will be described in detail below with reference to the drawings. In the following description, the same or corresponding parts are given the same reference numerals, and overlapping description will be omitted. Note that the present invention is not limited to the following embodiments. In this specification, (meth)acrylic means acrylic or methacrylic, and the same applies to other similar expressions such as (meth)acrylate.

<Dicing/die bonding integrated film>
FIG. 1(a) is a plan view showing an integrated dicing/die bonding film according to the present embodiment, and FIG. 1(b) is a schematic cross-sectional view taken along line BB in FIG. The dicing/die bonding integrated film 10 (hereinafter simply referred to as "film 10" in some cases) is used in the process of singulating a wafer W into a plurality of chips with an area of 0.1 to 9 mm ² (and the subsequent picking up process). (see FIGS. 5(c) and 5(d)).

The film 10 includes a base material layer 1, an adhesive layer 3 having a first surface F1 facing the base material layer 1, and a second surface F2 opposite to the first surface F1; An adhesive layer 5 provided so as to cover the central portion of the second surface F2 is provided in this order. In this embodiment, a mode is illustrated in which one laminate of the adhesive layer 3 and the adhesive layer 5 is formed on the square base material layer 1, but the base material layer 1 has a predetermined length. The adhesive layer 3 and the adhesive layer 5 may have a length (for example, 100 m or more), and the laminates of the adhesive layer 3 and the adhesive layer 5 may be arranged at a predetermined interval so as to be aligned in the longitudinal direction.

(Adhesive layer)
The adhesive layer 3 has a first region 3a including at least a region Rw corresponding to the attachment position of the wafer W on the adhesive layer 5, and a second region 3b located so as to surround the first region 3a. . The broken line in FIGS. 1(a) and 1(b) indicates the boundary between the first region 3a and the second region 3b. The first region 3a and the second region 3b are made of the same composition (active energy ray-curable adhesive) before irradiation with active energy rays. The first region 3a is a region whose adhesive strength is lower than that of the second region 3b due to irradiation with active energy rays. The second region 3b is a region to which the dicing ring DR is attached (see FIG. 2). The second region 3b is a region that is not irradiated with active energy rays and has high adhesive strength to the dicing ring DR. The active energy ray may be at least one selected from ultraviolet rays, electron beams, and visible rays, and may be ultraviolet rays. The dose of active energy rays may be, for example, 10 to 1000 mJ/cm ² , 100 to 700 mJ/cm ² , or 200 to 500 mJ/cm ² .

The adhesive force of the second region 3b of the adhesive layer 3 to the adhesive layer 5 is F2 (N/25 mm), and the adhesive force of the first region 3a of the adhesive layer 3 to the adhesive layer 5 is F1 (N/25 mm). ), the difference between F2 and F1 (F2-F1) is 6.5 to 9.0 N/25 mm, and may be 7.0 to 9.0 N/25 mm. Here, F1 and F2 are 30° peel strengths measured at a temperature of 23° C., a peeling angle of 30°, and a peeling speed of 60 mm/min. FIG. 3 is a cross-sectional view schematically showing how the 30° peel strength of the adhesive layer 3 is measured with the adhesive layer 5 of the measurement sample (width 25 mm x length 100 mm) fixed on the support plate 80. It is a diagram. FIG. 3 may show how F1 is being measured. The second region 3b of the adhesive layer 3 is a region in the same state as the adhesive layer before irradiation with active energy rays, and can also be called a non-irradiated region with active energy rays. Therefore, F2 may be measured by replacing the adhesive layer 3 in FIG. 3 with an adhesive layer 3 that does not have the first region 3a. Since the state of the adhesive layer 3 without the first region 3a is the state before the adhesive layer is irradiated with active energy rays, F2 is, for example, on the surface of the base material layer 1. Using a laminate including an adhesive layer made of an active energy ray-curable adhesive and an adhesive layer 5 formed on the surface of the adhesive layer, the adhesive layer 5 is coated before irradiation with active energy rays. It can be determined by measuring the adhesive force of the adhesive layer (adhesive layer 3 that does not have the first region 3a). By setting (F2-F1) in this range, it is possible to suppress the curing shrinkage of the adhesive layer and reduce the edge peel strength ^. ) can be applied to the manufacturing process of semiconductor devices including the step of singulating into pieces, and can achieve excellent pick-up properties from the adhesive layer 3. (F2-F1) may be 6.6N/25mm or more, 6.8N/25mm or more, 7.0N/25mm or more, or 7.2N/25mm or more, and 8.8N/25mm or less, 8. It may be 6N/25mm or less, 8.4N/25mm or less, or 8.2N/25mm or less.

As described above, the film 10 can also be suitably used in a semiconductor device manufacturing process that includes the step of cutting a wafer into a plurality of small chips with an area of 0.1 to 9 mm ² (and the subsequent picking up step). can. The present inventors conducted a study focusing on the fact that the pickup behavior of a small chip with a size of 3 mm x 3 mm or less (area 9 mm ² or less) is different from the pickup behavior of a large chip with a size of, for example, about 8 mm x 6 mm. As a result, the difference (F2-F1) between the adhesive strength of the second region 3b of the adhesive layer 3 to the adhesive layer 5 and the adhesive strength of the first region 3a of the adhesive layer 3 to the adhesive layer 5 was calculated as 6. It was specified as .5 to 9.0N/25mm. The present inventors have previously found that edge peeling is the dominant factor in pick-up properties in small chips, and that the main cause of increase in edge peeling strength is curing shrinkage, and has calculated (F2-F1). It has further been found that by setting the pressure to 6.5 to 9.0 N/25 mm, curing shrinkage can be suppressed and excellent pick-up properties from the adhesive layer 3 can be achieved. As a result, by using the film 10, it becomes possible to manufacture semiconductor devices with a sufficiently high yield.

The adhesive force (F1) of the first region 3a of the adhesive layer 3 to the adhesive layer 5 may be, for example, 1.1 to 4.5 N/25 mm or 1.1 to 3.0 N/25 mm. F1 may be 1.2N/25mm or more, 1.5N/25mm or more, or 2.0N/25mm or more, and 4.0N/25mm or less, 3.7N/25mm or less, 3.5N/25mm or less , 3.2N/25mm or less, or 3.0N/25mm or less.

The first region 3a having adhesive strength within the above range with respect to the adhesive layer 5 is formed by irradiation with active energy rays, and can also be called an active energy ray irradiation region. The present inventors have also found that reducing the adhesive force of the adhesive layer by irradiation with active energy rays affects the peeling of the edge portion of the DAF. That is, if the adhesive strength of the first region 3a is excessively reduced by irradiation with active energy rays, the 30° peel strength of the first region 3a with respect to the adhesive layer 5 will be low, and the pick-up target will be small. In the case of a chip, the edge portion of the DAF tends to be difficult to peel off, and the chip becomes excessively deformed, making it easy to crack or pick up errors. It can also be said that the lower limit of the adhesive force of the first region 3a to the adhesive layer 5 (for example, 1.1 N/25 mm) does not excessively reduce the adhesive force before irradiation with active energy rays. This makes it easy for the edge portion of the DAF to peel off even if the chip is small. On the other hand, if the adhesive force of the first region 3a to the adhesive layer 5 is too high, the pick-up properties tend to decrease. The upper limit of the adhesive force of the first region 3a to the adhesive layer 5 (for example, 4.5 N/25 mm) is such that the adhesive force before irradiation with active energy rays is lowered to the extent that excellent pick-up properties are exhibited. It can be said that it is a thing.

The adhesive force (F2) of the second region 3b of the adhesive layer 3 to the adhesive layer 5 may be, for example, 8.0 to 11.5 N/25 mm. F2 may be 8.5N/25mm or more, 9.0N/25mm or more, or 9.5N/25mm or more, and 11.0N/25mm or less, 10.8N/25mm or less, or 10.5N/25mm It may be the following.

In this embodiment, for example, the content of chain-polymerizable functional groups in the (meth)acrylic resin (content of the functional group-introducing compound), the content of the crosslinking agent in the adhesive layer, the irradiation amount of active energy rays, etc. or, for example, by adding other resins (acrylic monomers or oligomers, urethane monomers or oligomers, etc.) or tackifiers (tackifiers, etc.) ) can be adjusted.

The adhesive force of the second region 3b of the adhesive layer 3 to the stainless steel substrate may be 0.2 N/25 mm or more. This adhesive strength is a 90° peel strength measured at a temperature of 23° C., a peeling angle of 90°, and a peeling speed of 50 mm/min. When this adhesive force is 0.2 N/25 mm or more, ring peeling during dicing can be sufficiently suppressed. The adhesive force of the second region 3b of the adhesive layer 3 to the stainless steel substrate may be 0.25 N/25 mm or more or 0.3 N/25 mm or more, and 2.0 N/25 mm or less, 1.0 N/25 mm or less. , 0.8 N/25 mm or less, or 0.6 N/25 mm or less.

The adhesive layer before irradiation with active energy rays is made of, for example, an active energy ray-curable adhesive containing a (meth)acrylic resin, a photopolymerization initiator, and a crosslinking agent. The second region 3b that is not irradiated with active energy rays may have the same composition as the adhesive layer before irradiation with active energy rays. Hereinafter, the components contained in the active energy ray-curable adhesive will be explained in detail.

[(meth)acrylic resin]
The active energy ray-curable adhesive may contain a (meth)acrylic resin having a functional group capable of chain polymerization. When such a (meth)acrylic resin is included, the functional group may be at least one selected from an acryloyl group and a methacryloyl group. The content of functional groups in the (meth)acrylic resin may be 0.1 to 1.2 mmol/g. The content of functional groups in the (meth)acrylic resin may be 0.2 mmol/g or more or 0.3 mmol/g or more, and may be 1.0 mmol/g or less, 0.8 mmol/g or less, or 0.7 mmol. /g or less, 0.6 mmol/g or less, or 0.5 mmol/g or less. When the content of the functional group is 0.1 mmol/g or more, there is a tendency to easily form a region (first region 3a) in which the adhesive force is moderately reduced by irradiation with active energy rays; When the amount is 2 mmol/g or less, excellent pickup properties tend to be easily achieved.

(Meth)acrylic resin can be obtained by synthesis using a known method. Examples of the synthesis method include solution polymerization, suspension polymerization, emulsion polymerization, bulk polymerization, precipitation polymerization, gas phase polymerization, plasma polymerization, and supercritical polymerization. In addition, types of polymerization reactions include radical polymerization, cationic polymerization, anionic polymerization, living radical polymerization, living cationic polymerization, living anionic polymerization, coordination polymerization, immodal polymerization, etc., as well as ATRP (atom transfer radical polymerization) and RAFT ( Examples include techniques such as reversible addition-fragmentation chain transfer polymerization). Among these, synthesis by radical polymerization using the solution polymerization method is not only economical, has a high reaction rate, and is easy to control polymerization, but also allows compounding using the resin solution obtained by polymerization as it is. It has the following advantages.

Here, a method for synthesizing a (meth)acrylic resin will be described in detail, taking as an example a method for obtaining a (meth)acrylic resin by radical polymerization using a solution polymerization method.

There are no particular limitations on the monomer used when synthesizing the (meth)acrylic resin, as long as it has one (meth)acryloyl group in one molecule. Specific examples include methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, isobutyl (meth)acrylate, tert-butyl (meth)acrylate, butoxyethyl (meth)acrylate, and isoamyl (meth)acrylate. , hexyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, heptyl (meth)acrylate, octylheptyl (meth)acrylate, nonyl (meth)acrylate, decyl (meth)acrylate, undecyl (meth)acrylate, lauryl (meth)acrylate Acrylate, tridecyl (meth)acrylate, tetradecyl (meth)acrylate, pentadecyl (meth)acrylate, hexadecyl (meth)acrylate, stearyl (meth)acrylate, behenyl (meth)acrylate, methoxypolyethylene glycol (meth)acrylate, ethoxypolyethylene glycol ( Aliphatic (meth)acrylates such as meth)acrylate, methoxypolypropylene glycol (meth)acrylate, ethoxypolypropylene glycol (meth)acrylate, mono(2-(meth)acryloyloxyethyl)succinate; cyclopentyl (meth)acrylate, cyclohexyl ( meth)acrylate, cyclopentyl (meth)acrylate, dicyclopentanyl (meth)acrylate, dicyclopentenyl (meth)acrylate, isobornyl (meth)acrylate, mono(2-(meth)acryloyloxyethyl)tetrahydrophthalate, mono( Alicyclic (meth)acrylates such as 2-(meth)acryloyloxyethyl)hexahydrophthalate; benzyl (meth)acrylate, phenyl (meth)acrylate, o-biphenyl (meth)acrylate, 1-naphthyl (meth)acrylate , 2-naphthyl (meth)acrylate, phenoxyethyl (meth)acrylate, p-cumylphenoxyethyl (meth)acrylate, o-phenylphenoxyethyl (meth)acrylate, 1-naphthoxyethyl (meth)acrylate, 2-naphthoxyethyl (meth)acrylate, ) acrylate, phenoxypolyethylene glycol (meth)acrylate, nonylphenoxypolyethylene glycol (meth)acrylate, phenoxypolypropylene glycol (meth)acrylate, 2-hydroxy-3-phenoxypropyl (meth)acrylate, 2-hydroxy-3-(o- Aromatic (meth)acrylates such as phenylphenoxy)propyl (meth)acrylate, 2-hydroxy-3-(1-naphthoxy)propyl (meth)acrylate, and 2-hydroxy-3-(2-naphthoxy)propyl (meth)acrylate. ; Heterocyclic (meth)acrylates such as 2-tetrahydrofurfuryl (meth)acrylate, N-(meth)acryloyloxyethylhexahydrophthalimide, 2-(meth)acryloyloxyethyl-N-carbazole, and caprolactone thereof Modified product, ω-carboxy-polycaprolactone mono(meth)acrylate, glycidyl (meth)acrylate, α-ethylglycidyl (meth)acrylate, α-propylglycidyl (meth)acrylate, α-butylglycidyl (meth)acrylate, 2- Methylglycidyl (meth)acrylate, 2-ethylglycidyl (meth)acrylate, 2-propylglycidyl (meth)acrylate, 3,4-epoxybutyl (meth)acrylate, 3,4-epoxyheptyl (meth)acrylate, α-ethyl Ethylenically unsaturated, such as -6,7-epoxyheptyl (meth)acrylate, 3,4-epoxycyclohexylmethyl (meth)acrylate, o-vinylbenzylglycidyl ether, m-vinylbenzylglycidyl ether, p-vinylbenzylglycidyl ether, etc. Compounds having a group and an epoxy group; (2-ethyl-2-oxetanyl)methyl (meth)acrylate, (2-methyl-2-oxetanyl)methyl (meth)acrylate, 2-(2-ethyl-2-oxetanyl) Ethyl (meth)acrylate, 2-(2-methyl-2-oxetanyl)ethyl (meth)acrylate, 3-(2-ethyl-2-oxetanyl)propyl (meth)acrylate, 3-(2-methyl-2-oxetanyl) ) Compounds having an ethylenically unsaturated group and an oxetanyl group such as propyl (meth)acrylate; Compounds having an ethylenically unsaturated group and an isocyanate group such as 2-(meth)acryloyloxyethyl isocyanate; 2-hydroxyethyl ( Ethylenically unsaturated groups such as meth)acrylate, 2-hydroxypropyl(meth)acrylate, 4-hydroxybutyl(meth)acrylate, 3-chloro-2-hydroxypropyl(meth)acrylate, 2-hydroxybutyl(meth)acrylate, etc. and a hydroxyl group. The desired (meth)acrylic resin can be obtained by appropriately combining these.

The (meth)acrylic resin may have at least one functional group selected from hydroxyl group, glycidyl group (epoxy group), amino group, etc. as a reaction site with the functional group-introducing compound or crosslinking agent described below. good. Monomers for synthesizing (meth)acrylic resins having hydroxyl groups include, for example, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 3-chloro Examples include compounds having an ethylenically unsaturated group and a hydroxyl group such as -2-hydroxypropyl (meth)acrylate and 2-hydroxybutyl (meth)acrylate. These may be used alone or in combination of two or more.

Monomers for synthesizing (meth)acrylic resins having glycidyl groups include glycidyl (meth)acrylate, α-ethylglycidyl (meth)acrylate, α-propylglycidyl (meth)acrylate, and α-butylglycidyl (meth)acrylate. Acrylate, 2-methylglycidyl (meth)acrylate, 2-ethylglycidyl (meth)acrylate, 2-propylglycidyl (meth)acrylate, 3,4-epoxybutyl (meth)acrylate, 3,4-epoxyheptyl (meth)acrylate , α-ethyl-6,7-epoxyheptyl (meth)acrylate, 3,4-epoxycyclohexylmethyl (meth)acrylate, o-vinylbenzylglycidyl ether, m-vinylbenzylglycidyl ether, p-vinylbenzylglycidyl ether, etc. Examples include compounds having an ethylenically unsaturated group and an epoxy group. These may be used alone or in combination of two or more.

The (meth)acrylic resin synthesized from these monomers contains a functional group capable of chain polymerization. The chain-polymerizable functional group is, for example, at least one selected from acryloyl groups and methacryloyl groups. The functional group capable of chain polymerization is, for example, added to the (meth)acrylic resin having at least one functional group selected from hydroxyl group, glycidyl group (epoxy group), amino group, etc., synthesized as described above. By reacting a compound (functional group-introducing compound), it can be introduced into the (meth)acrylic resin. Specific examples of functional group-introduced compounds include 2-methacryloyloxyethyl isocyanate, meta-isopropenyl-α,α-dimethylbenzyl isocyanate, methacryloyl isocyanate, allyl isocyanate, 1,1-(bisacryloyloxymethyl)ethyl isocyanate; diisocyanate compounds or an acryloyl monoisocyanate compound obtained by reacting a polyisocyanate compound with hydroxyethyl (meth)acrylate or 4-hydroxybutylethyl (meth)acrylate; a diisocyanate compound or a polyisocyanate compound, a polyol compound, and hydroxyethyl (meth)acrylate; Examples include acryloyl monoisocyanate compounds obtained by reaction with acrylate. These may be used alone or in combination of two or more. Among these, the functional group-introducing compound may be 2-methacryloyloxyethyl isocyanate.

[Photopolymerization initiator]
The photopolymerization initiator is not particularly limited as long as it generates active species capable of chain polymerization upon irradiation with active energy rays. The active energy ray may be at least one selected from ultraviolet rays, electron beams, and visible rays, and may be ultraviolet rays. Examples of the photopolymerization initiator include radical photopolymerization initiators. The active species capable of chain polymerization herein means those that initiate a polymerization reaction by reacting with a functional group capable of chain polymerization.

Examples of the photoradical polymerization initiator include benzoin ketals such as 2,2-dimethoxy-1,2-diphenylethan-1-one; 1-hydroxycyclohexylphenyl ketone, and 2-hydroxy-2-methyl-1-phenylpropane. α-hydroxyketones such as -1-one, 1-[4-(2-hydroxyethoxy)phenyl]-2-hydroxy-2-methyl-1-propan-1-one; 2-benzyl-2-dimethylamino- α-aminoketones such as 1-(4-morpholinophenyl)-butan-1-one, 1,2-methyl-1-[4-(methylthio)phenyl]-2-morpholinopropan-1-one; 1- Oxime esters such as [4-(phenylthio)phenyl]-1,2-octadione-2-(benzoyl)oxime; bis(2,4,6-trimethylbenzoyl)phenylphosphine oxide, bis(2,6-dimethoxybenzoyl) Phosphine oxides such as -2,4,4-trimethylpentylphosphine oxide, 2,4,6-trimethylbenzoyldiphenylphosphine oxide; 2-(o-chlorophenyl)-4,5-diphenylimidazole dimer, 2-(o -chlorophenyl)-4,5-di(methoxyphenyl)imidazole dimer, 2-(o-fluorophenyl)-4,5-diphenylimidazole dimer, 2-(o-methoxyphenyl)-4,5- 2,4,5-triarylimidazole dimers such as diphenylimidazole dimer, 2-(p-methoxyphenyl)-4,5-diphenylimidazole dimer; benzophenone, N,N,N',N' -benzophenone compounds such as tetramethyl-4,4'-diaminobenzophenone, N,N,N',N'-tetraethyl-4,4'-diaminobenzophenone, 4-methoxy-4'-dimethylaminobenzophenone; 2-ethyl Anthraquinone, phenanthrenequinone, 2-tert-butylanthraquinone, octamethylanthraquinone, 1,2-benzanthraquinone, 2,3-benzanthraquinone, 2-phenylanthraquinone, 2,3-diphenylanthraquinone, 1-chloroanthraquinone, 2-methyl Quinone compounds such as anthraquinone, 1,4-naphthoquinone, 9,10-phenanthraquinone, 2-methyl-1,4-naphthoquinone, 2,3-dimethylanthraquinone; benzoin methyl ether, benzoin ethyl ether, benzoin phenyl ether, etc. benzoin ethers; benzoin compounds such as benzoin, methylbenzoin, and ethylbenzoin; benzyl compounds such as benzyl dimethyl ketal; acridine compounds such as 9-phenylacridine and 1,7-bis(9,9'-acridinylheptane); Examples include N-phenylglycine and coumarin.

The content of the photopolymerization initiator in the active energy ray-curable adhesive is 0.1 to 30 parts by mass, 0.3 to 10 parts by mass, or , 0.5 to 5 parts by mass. When the content of the photopolymerization initiator is 0.1 part by mass or more, the adhesive layer is sufficiently cured after irradiation with active energy rays, and pickup defects tend to be less likely to occur. When the content of the photopolymerization initiator is 30 parts by mass or less, contamination of the adhesive layer (transfer of the photopolymerization initiator to the adhesive layer) tends to be prevented.

[Crosslinking agent]
The crosslinking agent is used, for example, for the purpose of controlling the elastic modulus and/or tackiness of the adhesive layer. The crosslinking agent may be a compound having two or more functional groups in one molecule that can react with at least one functional group selected from the hydroxyl group, glycidyl group, amino group, etc. that the (meth)acrylic resin has. Examples of the bonds formed by the reaction between the crosslinking agent and the (meth)acrylic resin include ester bonds, ether bonds, amide bonds, imide bonds, urethane bonds, and urea bonds.

In this embodiment, the crosslinking agent may be, for example, a polyfunctional isocyanate having two or more isocyanate groups in one molecule. When such a polyfunctional isocyanate is used, it can easily react with the hydroxyl group, glycidyl group, amino group, etc. that the (meth)acrylic resin has, and form a strong crosslinked structure.

Examples of polyfunctional isocyanates having two or more isocyanate groups in one molecule include 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diisocyanate, and 1,4-xylylene diisocyanate. , diphenylmethane-4,4'-diisocyanate, diphenylmethane-2,4'-diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane-4,4'-diisocyanate, dicyclohexylmethane-2,4'- Examples include isocyanate compounds such as diisocyanate and lysine isocyanate.

The crosslinking agent may be a reaction product (isocyanate group-containing oligomer) of a polyfunctional isocyanate and a polyhydric alcohol having two or more hydroxy groups in one molecule. Examples of polyhydric alcohols having two or more hydroxy groups in one molecule include ethylene glycol, propylene glycol, butylene glycol, 1,6-hexanediol, 1,8-octanediol, 1,9-nonanediol, Examples include 1,10-decanediol, 1,11-undecanediol, 1,12-dodecanediol, glycerin, trimethylolpropane, pentaerythritol, dipentaerythritol, 1,4-cyclohexanediol, 1,3-cyclohexanediol, etc. It will be done.

Among these, the crosslinking agent is a reaction product of a polyfunctional isocyanate having two or more isocyanate groups in one molecule and a polyhydric alcohol having three or more hydroxyl groups in one molecule (isocyanate group-containing oligomer). ). By using such an isocyanate group-containing oligomer as a crosslinking agent, the adhesive layer 3 forms a dense crosslinked structure, which sufficiently prevents the adhesive from adhering to the adhesive layer 5 in the pick-up process. It tends to be possible.

The content of the crosslinking agent in the active energy ray-curable adhesive can be appropriately set depending on the cohesive force, elongation at break, adhesion with the adhesive layer, etc. required for the adhesive layer. Specifically, the content of the crosslinking agent is, for example, 3 to 30 parts by mass, 4 to 15 parts by mass, or 7 to 10 parts by mass, based on 100 parts by mass of the (meth)acrylic resin. It's fine. By setting the content of the crosslinking agent within the above range, it is possible to achieve a good balance between the properties required for the adhesive layer in the dicing process and the properties required for the adhesive layer in the die bonding process. It is also possible to achieve good pick-up properties.

When the content of the crosslinking agent is 3 parts by mass or more per 100 parts by mass of the (meth)acrylic resin, the formation of a crosslinked structure is unlikely to be insufficient, and the interfacial adhesion with the adhesive layer is reduced in the pick-up process. The force is sufficiently reduced and defects tend to be less likely to occur during pickup. On the other hand, if the content of the crosslinking agent is 30 parts by mass or less per 100 parts by mass of the (meth)acrylic resin, the adhesive layer is unlikely to become excessively hard, and the chips tend to be difficult to peel off in the expanding process. It is in.

The content of the crosslinking agent based on the total mass of the active energy ray-curable adhesive may be, for example, 0.1 to 15% by mass, 3 to 15% by mass, or 5 to 15% by mass. When the content of the crosslinking agent is 0.1% by mass or more, it is easy to form a region (first region 3a) in which the adhesive strength is moderately reduced by irradiation with active energy rays, while on the other hand, when the content is 15% by mass or less, This tends to make it easier to achieve excellent pickup properties.

The thickness of the adhesive layer 3 may be appropriately set depending on the conditions of the expanding process (temperature, tension, etc.), and may be, for example, 1 to 200 μm, 5 to 50 μm, or 10 to 20 μm. If the thickness of the adhesive layer 3 is 1 μm or more, the adhesiveness is unlikely to be insufficient, and if it is less than 200 μm, the kerf width becomes wide during expansion (without relaxing the stress when pushing up the pin), resulting in poor pick-up. It tends to be difficult to get enough.

The adhesive layer 3 is formed on the base layer 1. As a method for forming the adhesive layer 3, a known method can be adopted. For example, a laminate of the base layer 1 and the adhesive layer 3 may be formed by a two-layer extrusion method, or an active energy ray-curable adhesive varnish (varnish for forming the adhesive layer) may be prepared, This may be applied to the surface of the base layer 1, or the adhesive layer 3 may be formed on a release-treated film and transferred to the base layer 1.

The active energy ray-curable adhesive varnish (varnish for forming the adhesive layer) is an organic solvent that can dissolve the (meth)acrylic resin, photopolymerization initiator, and crosslinking agent, and it volatilizes when heated. It's good to be there. Specific examples of organic solvents include aromatic hydrocarbons such as toluene, xylene, mesitylene, cumene, and p-cymene; cyclic ethers such as tetrahydrofuran and 1,4-dioxane; methanol, ethanol, isopropanol, butanol, ethylene glycol, and propylene. Alcohols such as glycol; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, 4-hydroxy-4-methyl-2-pentanone; methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, γ-butyrolactone, etc. Ester; carbonic acid ester such as ethylene carbonate, propylene carbonate; ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol Polyhydric alcohol alkyl ethers such as dimethyl ether, propylene glycol diethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether; ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, ethylene glycol mono Polyhydric alcohol alkyl ether acetate such as butyl ether acetate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, diethylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether acetate; N,N-dimethylformamide, N,N-dimethylacetamide, N -Methyl-2-pyrrolidone and other amides. These organic solvents may be used alone or in combination of two or more.

Among these, organic solvents include toluene, methanol, ethanol, isopropanol, acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, methyl acetate, ethyl acetate, butyl acetate, ethylene glycol monomethyl ether, from the viewpoint of solubility and boiling point. , ethylene glycol monoethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, diethylene glycol dimethyl ether, ethylene glycol monomethyl ether acetate, propylene glycol monomethyl ether acetate, and N,N-dimethylacetamide. It's good. The solid content concentration of the varnish is usually 10 to 60% by mass.

(Base material layer)
The base material layer 1 can be a known polymer sheet or film, and is not particularly limited as long as it can be subjected to an expanding process under low temperature conditions. Specific examples of the base layer 1 include polyolefins such as crystalline polypropylene, amorphous polypropylene, high-density polyethylene, medium-density polyethylene, low-density polyethylene, ultra-low-density polyethylene, low-density linear polyethylene, polybutene, and polymethylpentene. , ethylene-vinyl acetate copolymer, ionomer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylic acid ester (random, alternating) copolymer, ethylene-butene copolymer, ethylene-hexene Copolymers, polyesters such as polyurethane, polyethylene terephthalate, and polyethylene naphthalate, polycarbonate, polyimide, polyetheretherketone, polyimide, polyetherimide, polyamide, fully aromatic polyamide, polyphenylsulfide, aramid (paper), glass, Examples include glass cloth, fluororesin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, silicone resin, a mixture of these with a plasticizer, and a cured product crosslinked by electron beam irradiation.

The base material layer 1 has a surface mainly composed of at least one resin selected from the group consisting of polyethylene, polypropylene, polyethylene-polypropylene random copolymer, and polyethylene-polypropylene block copolymer, and this surface and It may be in contact with the adhesive layer 3. These resins can be good base materials from the viewpoint of properties such as Young's modulus, stress relaxation properties, melting point, etc., price, and recycling of waste materials after use. The base material layer 1 may be a single layer, or may have a multilayer structure in which layers made of different materials are laminated, if necessary. From the viewpoint of controlling the adhesiveness with the adhesive layer 3, the surface of the base material layer 1 may be subjected to surface roughening treatment such as matte treatment and corona treatment.

(Adhesive layer)
For the adhesive layer 5, an adhesive composition constituting a known die bonding film can be applied. Specifically, the adhesive composition constituting the adhesive layer 5 may include a reactive group-containing (meth)acrylic copolymer, a curing accelerator, and a filler. The adhesive layer 5 containing these components has excellent adhesion between chips and substrates and between chips, and can also provide electrode embedding properties, wire embedding properties, etc., and can be used at low temperatures in the die bonding process. They tend to have characteristics such as being able to be bonded, achieving excellent curing in a short time, and having excellent reliability after molding with a sealant.

The reactive group-containing (meth)acrylic copolymer may be, for example, an epoxy group-containing (meth)acrylic copolymer. The epoxy group-containing (meth)acrylic copolymer may be a copolymer obtained by using glycidyl (meth)acrylate as a raw material in an amount of 0.5 to 6% by mass based on the resulting copolymer. When the content of glycidyl (meth)acrylate is 0.5% by mass or more, high adhesive strength can be easily obtained, while when it is 6% by mass or less, gelation tends to be suppressed. The monomer constituting the remainder of the reactive group-containing (meth)acrylic copolymer is, for example, an alkyl (meth)acrylate having an alkyl group having 1 to 8 carbon atoms such as methyl (meth)acrylate, styrene, acrylonitrile, etc. It's fine. Among these, the monomers constituting the remainder of the reactive group-containing (meth)acrylic copolymer may be ethyl (meth)acrylate and/or butyl (meth)acrylate. The mixing ratio can be adjusted by considering the Tg of the reactive group-containing (meth)acrylic copolymer. When Tg is −10° C. or higher, it tends to be possible to prevent the tackiness of the adhesive layer 5 from becoming too large in the B-stage state, and it tends to be easy to handle. Note that the glass transition point (Tg) of the epoxy group-containing (meth)acrylic copolymer may be, for example, 30° C. or lower. The polymerization method is not particularly limited, and examples thereof include pearl polymerization, solution polymerization, and the like. Examples of commercially available epoxy group-containing (meth)acrylic copolymers include HTR-860P-3 (trade name, manufactured by Nagase ChemteX Corporation).

The weight average molecular weight of the epoxy group-containing (meth)acrylic copolymer may be 100,000 or more from the viewpoint of adhesiveness and heat resistance, and may be 300,000 to 3 million or 500,000 to 2 million. When the weight average molecular weight is 3,000,000 or less, it is possible to prevent the filling properties between the chip and the substrate that supports it from decreasing. The weight average molecular weight is a polystyrene equivalent value determined by gel permeation chromatography (GPC) using a standard polystyrene calibration curve.

Examples of the curing accelerator include tertiary amines, imidazoles, and quaternary ammonium salts. Specific examples of the curing accelerator include 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and 1-cyanoethyl-2-phenylimidazolium trimellitate. These may be used alone or in combination of two or more.

The filler may be an inorganic filler. Specific examples of inorganic fillers include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whiskers, boron nitride, Examples include crystalline silica and amorphous silica. These may be used alone or in combination of two or more.

The adhesive composition may further include an epoxy resin and an epoxy resin hardener. Examples of the epoxy resin include bisphenol A epoxy resin, bisphenol F epoxy resin, bisphenol S epoxy resin, alicyclic epoxy resin, aliphatic chain epoxy resin, phenol novolac epoxy resin, cresol novolak epoxy resin, Bisphenol A novolac type epoxy resin, diglycidyl etherified biphenol, diglycidyl etherified naphthalene diol, diglycidyl etherified phenol, diglycidyl etherified alcohol, and alkyl substituted products and halogenated products thereof. , bifunctional epoxy resins such as hydrogenated products, novolak type epoxy resins, and the like. Furthermore, other commonly known epoxy resins such as polyfunctional epoxy resins and heterocycle-containing epoxy resins may also be used. These can be used alone or in combination of two or more. Note that components other than the epoxy resin may be included as impurities within a range that does not impair the properties.

Examples of the epoxy resin curing agent include phenol resins that can be obtained by reacting a phenol compound and a xylylene compound, which is a divalent linking group, without a catalyst or in the presence of an acid catalyst. Examples of phenolic compounds used in the production of phenolic resins include phenol, o-cresol, m-cresol, p-cresol, o-ethylphenol, p-ethylphenol, on-propylphenol, m-n-propyl Phenol, pn-propylphenol, o-isopropylphenol, m-isopropylphenol, p-isopropylphenol, on-butylphenol, mn-butylphenol, pn-butylphenol, o-isobutylphenol, m-isobutyl Phenol, p-isobutylphenol, octylphenol, nonylphenol, 2,4-xylenol, 2,6-xylenol, 3,5-xylenol, 2,4,6-trimethylphenol, resorcinol, catechol, hydroquinone, 4-methoxyphenol, o - Phenylphenol, m-phenylphenol, p-phenylphenol, p-cyclohexylphenol, o-allylphenol, p-allylphenol, o-benzylphenol, p-benzylphenol, o-chlorophenol, p-chlorophenol, o -bromophenol, p-bromophenol, o-iodophenol, p-iodophenol, o-fluorophenol, m-fluorophenol, p-fluorophenol and the like. These phenol compounds may be used alone or in combination of two or more. As the xylylene compound which is a divalent linking group used in the production of phenol resin, the following xylylene dihalides, xylylene diglycols and derivatives thereof can be used. That is, specific examples of xylylene compounds include α,α'-dichloro-p-xylene, α,α'-dichloro-m-xylene, α,α'-dichloro-o-xylene, and α,α'-dibromo-xylene. p-xylene, α,α'-dibromo-m-xylene, α,α'-dibromo-o-xylene, α,α'-diiodo-p-xylene, α,α'-diiodo-m-xylene, α, α'-diiodo-o-xylene, α,α'-dihydroxy-p-xylene, α,α'-dihydroxy-m-xylene, α,α'-dihydroxy-o-xylene, α,α'-dimethoxy-p -xylene, α,α'-dimethoxy-m-xylene, α,α'-dimethoxy-o-xylene, α,α'-diethoxy-p-xylene, α,α'-diethoxy-m-xylene, α,α '-Diethoxy-o-xylene, α,α'-di-n-propoxy-p-xylene, α,α'-di-n-propoxy-m-xylene, α,α'-di-n-propoxy-o -xylene, α,α'-diisopropoxy-p-xylene, α,α'-diisopropoxy-m-xylene, α,α'-diisopropoxy-o-xylene, α,α'-di-n -butoxy-p-xylene, α,α'-di-n-butoxy-m-xylene, α,α'-di-n-butoxy-o-xylene, α,α'-diisobutoxy-p-xylene, α, α'-diisobutoxy-m-xylene, α,α'-diisobutoxy-o-xylene, α,α'-di-tert-butoxy-p-xylene, α,α'-di-tert-butoxy-m-xylene, Examples include α,α'-di-tert-butoxy-o-xylene. These may be used alone or in combination of two or more.

When reacting a phenol compound and a xylylene compound, mineral acids such as hydrochloric acid, sulfuric acid, phosphoric acid, and polyphosphoric acid; organic carboxylic acids such as dimethyl sulfate, diethyl sulfate, p-toluenesulfonic acid, methanesulfonic acid, ethanesulfonic acid, etc. Acids; Super strong acids such as trifluoromethanesulfonic acid; Strongly acidic ion exchange resins such as alkanesulfonic acid type ion exchange resins; Super strongly acidic ion exchange resins such as perfluoroalkanesulfonic acid type ion exchange resins (product name : Nafion (manufactured by Du Pont, "Nafion" is a registered trademark); natural and synthetic zeolites; A phenol resin can be obtained by reacting until the compound disappears and the reaction composition becomes constant. The reaction time can be appropriately set depending on the raw materials and reaction temperature, for example, about 1 hour to 15 hours, and can be determined while monitoring the reaction composition by GPC (gel permeation chromatography) or the like. .

The thickness of the adhesive layer 5 may be, for example, 1 to 300 μm, 5 to 150 μm, or 10 to 100 μm. When the thickness of the adhesive layer 5 is 1 μm or more, the adhesiveness tends to be better, while when it is 300 μm or less, the separation property and pick-up property during expansion tend to be better.

<Production method of dicing/die bonding integrated film>
The method for producing the film 10 includes forming an adhesive layer on the surface of the base material layer 1, which is made of an active energy ray-curable adhesive whose adhesive strength is reduced by irradiation with active energy rays, and an adhesive layer on the surface of the adhesive layer. and a step of irradiating active energy rays to a region that will become the first region 3a of the adhesive layer included in the laminate, in this order. . The irradiation dose of the active energy rays to the region that will become the first region 3a is, for example, 10 to 1000 mJ/cm ² , may be 100 to 700 mJ/cm ² , or 200 to 500 mJ/cm ² . In this manufacturing method, a laminate of an adhesive layer and an adhesive layer 5 is first produced, and then a specific region of the adhesive layer is irradiated with active energy rays.

<Semiconductor device and its manufacturing method>
FIG. 4 is a cross-sectional view schematically showing the semiconductor device according to this embodiment. The semiconductor device 100 shown in this figure includes a substrate 70, four chips S1, S2, S3, and S4 stacked on the surface of the substrate 70, an electrode (not shown) on the surface of the substrate 70, and four chips stacked on the surface of the substrate 70. It includes wires W1, W2, W3, and W4 that electrically connect S1, S2, S3, and S4, and a sealing layer 50 that seals these.

The substrate 70 is, for example, an organic substrate, or may be a metal substrate such as a lead frame. The thickness of the substrate 70 may be, for example, 70 to 140 μm or 80 to 100 μm from the viewpoint of suppressing warpage of the semiconductor device 100.

The four chips S1, S2, S3, and S4 are laminated via a cured product 5C of the adhesive piece 5P. The shapes of the chips S1, S2, S3, and S4 in plan view are, for example, square or rectangular. The area of the chips S1, S2, S3, S4 is 0.1-9 mm ² and may be 0.1-4 mm ² or 0.1-2 mm ² . The length of one side of the chips S1, S2, S3, and S4 may be, for example, 0.1 to 3 mm, 0.1 to 2 mm, or 0.1 to 1 mm. The thickness of the chips S1, S2, S3, S4 may be, for example, 10-170 μm or 25-100 μm. Note that the lengths of one side of the four chips S1, S2, S3, and S4 may be the same or different from each other, and the same applies to the thickness.

The manufacturing method of the semiconductor device 100 includes the steps of preparing the film 10 described above, attaching the wafer W to the adhesive layer 5 of the film 10, and attaching the dicing ring DR to the second surface F2 of the adhesive layer 3. , a step of dividing the wafer W into a plurality of chips S (dicing step), and a step of attaching the DAF 8 (a laminate of the chip S1 and the adhesive piece 5P, see FIG. 5(d)) to the adhesive layer 3. and a step of mounting the chip S1 on the substrate 70 via the adhesive piece 5P.

An example of a method for manufacturing the DAF 8 will be described with reference to FIGS. 5(a), 5(b), 5(c), and 5(d). First, the above film 10 is prepared. As shown in FIGS. 5(a) and 5(b), the film 10 is attached to one surface of the wafer W so that the adhesive layer 5 is in contact with it. Furthermore, a dicing ring DR is attached to the second surface F2 of the adhesive layer 3.

The wafer W, adhesive layer 5, and adhesive layer 3 are diced. As a result, the wafer W is separated into chips S as shown in FIG. 5(c). The adhesive layer 5 is also separated into pieces to become adhesive pieces 5P. Examples of the dicing method include a method using a dicing blade or a laser. Note that the wafer W may be thinned by grinding the wafer W prior to dicing the wafer W.

After dicing, the chips S are separated from each other by expanding the base material layer 1 at room temperature or under cooling conditions, as shown in FIG. 5(d), without irradiating the adhesive layer 3 with active energy rays. At the same time, the adhesive piece 5P is peeled off from the adhesive layer 3 by pushing up with the pin 42, and the DAF 8 is sucked and picked up by the suction collet 44.

A method for manufacturing the semiconductor device 100 will be specifically described with reference to FIGS. 6, 7, and 8. First, as shown in FIG. 6, the first chip S1 (chip S) is pressure-bonded to a predetermined position on the substrate 70 via the adhesive piece 5P. Next, the adhesive piece 5P is cured by heating. As a result, the adhesive piece 5P is cured to become a cured product 5C. The curing treatment of the adhesive piece 5P may be performed in a pressurized atmosphere from the viewpoint of reducing voids.

In the same manner as the mounting of the chip S1 on the substrate 70, the second stage chip S2 is mounted on the surface of the chip S1. Furthermore, by mounting the third and fourth chips S3 and S4, a structure 60 shown in FIG. 7 is produced. After electrically connecting the chips S1, S2, S3, S4 and the substrate 70 with the wires W1, W2, W3, W4 (see FIG. 8), the semiconductor elements and the wires are sealed with the sealing layer 50. The semiconductor device 100 shown in FIG. 4 is completed.

Although the embodiments of the present disclosure have been described in detail above, the present invention is not limited to the above embodiments. For example, in the above embodiment, the film 10 includes the base layer 1, the adhesive layer 3, and the adhesive layer 5 in this order, but the film 10 may not include the adhesive layer 5. . Further, the film 10 may further include a cover film (not shown) that covers the adhesive layer 5.

Hereinafter, the present disclosure will be described in more detail based on Examples, but the present invention is not limited to these Examples. In addition, unless otherwise specified, all chemicals used were reagents.

<Manufacture example 1>
[Synthesis of acrylic resin (A-1)]
The following ingredients were placed in a 2000 mL flask equipped with a three-one motor, a stirring blade, and a nitrogen introduction tube.
・Ethyl acetate (solvent): 635 parts by mass ・2-ethylhexyl acrylate: 395 parts by mass ・2-hydroxyethyl acrylate: 100 parts by mass ・Methacrylic acid: 5 parts by mass ・Azobisisobutyronitrile: 0.08 parts by mass

After stirring the contents until they became sufficiently uniform, bubbling was carried out for 60 minutes at a flow rate of 500 mL/min to degas the dissolved oxygen in the system. The temperature was raised to 78°C over 1 hour, and polymerization was carried out for 6 hours after the temperature was raised. Next, the reaction solution was transferred to a pressure cooker with a capacity of 2000 mL equipped with a three-one motor, a stirring blade, and a nitrogen introduction tube, and heated at 120 °C and 0.28 MPa for 4.5 hours, and then heated at room temperature (25 °C , hereinafter the same).

Next, 490 parts by mass of ethyl acetate was added and stirred to dilute the contents. To this, 0.10 parts by mass of dioctyltin dilaurate was added as a urethanization catalyst, and then 48.6 parts by mass of 2-methacryloyloxyethyl isocyanate (manufactured by Showa Denko K.K., Karenz MOI (trade name)) was added to 70 parts by mass. After reacting at ℃ for 6 hours, it was cooled to room temperature. Next, ethyl acetate was further added to adjust the nonvolatile content in the acrylic resin solution to 35% by mass, and the acrylic resin (A-1) containing the chain-polymerizable functional group of Production Example 1 was prepared. A solution was obtained.

The solution containing the acrylic resin (A-1) obtained as described above was vacuum dried at 60° C. overnight. The solid content thus obtained was subjected to elemental analysis using a fully automatic elemental analyzer (manufactured by Elemental, product name: varioEL), and the content of functional groups derived from the introduced 2-methacryloxyethyl isocyanate was determined by nitrogen content. When calculated from the amount, it was 0.50 mmol/g.

Furthermore, the weight average molecular weight of the acrylic resin (A-1) in terms of polystyrene was determined using the following apparatus. That is, SD-8022/DP-8020/RI-8020 manufactured by Tosoh Corporation was used, Gelpack GL-A150-S/GL-A160-S manufactured by Hitachi Chemical Co., Ltd. was used as the column, and tetrahydrofuran was used as the eluent. GPC measurements were performed. As a result, the weight average molecular weight in terms of polystyrene was 800,000. The hydroxyl value and acid value measured according to the method described in JIS K0070 were 56.1 mgKOH/g and 6.5 mgKOH/g. These results are summarized in Table 1.

<Manufacture example 2>
[Synthesis of acrylic resin (A-2)]
The acrylic resin (A-2) of Production Example 2 was prepared in the same manner as Production Example 1, except that the raw monomer composition shown in Production Example 1 in Table 1 was changed to the raw monomer composition shown in Production Example 2 in Table 1. A solution containing was obtained. Table 1 shows the measurement results of the properties of the acrylic resin (A-2) of Production Example 2.

<Manufacture example 3>
[Synthesis of acrylic resin (A-3)]
The acrylic resin (A-3) of Production Example 3 was prepared in the same manner as Production Example 1, except that the raw monomer composition shown in Production Example 1 in Table 1 was changed to the raw monomer composition shown in Production Example 3 in Table 1. A solution containing was obtained. Table 1 shows the measurement results of the properties of the acrylic resin (A-3) of Production Example 3.

<Example 1>
[Preparation of dicing film (adhesive layer)]
An active energy ray-curable adhesive varnish (varnish for forming an adhesive layer) was prepared by mixing the following components (see Table 2). The amount of ethyl acetate (solvent) was adjusted so that the total solids content of the varnish was 25% by mass.
- Solution containing acrylic resin (A-1) of Production Example 1: 100 parts by mass (solid content)
- Photopolymerization initiator (B-1) (1-hydroxycyclohexyl-phenyl-ketone (manufactured by Ciba Specialty Chemicals Co., Ltd., Irgacure 184, "Irgacure" is a registered trademark): 1.0 parts by mass - Crosslinking agent (C-1 ) (Polyfunctional isocyanate (reactant of tolylene diisocyanate and trimethylolpropane), manufactured by Japan Polyurethane Industries Co., Ltd., Coronate L, solid content: 75%): 8.0 parts by mass (solid content)
・Ethyl acetate (solvent)

A polyethylene terephthalate film (width: 450 mm, length: 500 mm, thickness: 38 μm), which had been subjected to a release treatment on one side, was prepared. An active energy ray-curable adhesive varnish was applied to the release-treated surface using an applicator, and then dried at 80° C. for 5 minutes. Thereby, a laminate (dicing film) consisting of a polyethylene terephthalate film and a 30 μm thick adhesive layer formed thereon was obtained.

A polyolefin film (width: 450 mm, length: 500 mm, thickness: 80 μm) that had been subjected to corona treatment on one side was prepared. The corona-treated surface and the adhesive layer of the laminate were bonded together at room temperature. Next, the adhesive layer was transferred to a polyolefin film (cover film) by pressing with a rubber roll. Thereafter, a dicing film with a cover film was obtained by allowing it to stand at room temperature for 3 days.

[Preparation of die bonding film (adhesive layer)]
A varnish for forming an adhesive layer was prepared by mixing the following components. First, cyclohexanone (solvent) was added to a mixture containing the following components, stirred and mixed, and then kneaded for 90 minutes using a bead mill.
・Epoxy resin (YDCN-700-10 (trade name), manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., cresol novolac type epoxy resin, epoxy equivalent: 210, molecular weight: 1200, softening point: 80°C): 14 parts by mass ・Phenol resin ( MILLEX Agent (NUCA-189 (trade name) manufactured by NUC Co., Ltd., γ-mercaptopropyltrimethoxysilane): 0.2 parts by mass Silane coupling agent (NUCA-1160 (trade name) manufactured by Nippon Unicar Co., Ltd., γ-mercaptopropyltrimethoxysilane): 0.2 parts by mass -Ureidopropyltriethoxysilane): 0.1 part by mass Filler (SC2050-HLG (trade name), manufactured by Admatex Co., Ltd., silica, average particle size 0.500 μm): 32 parts by mass

After further adding the following components to the mixture obtained as described above, a varnish for forming an adhesive layer (at least a reactive group-containing (meth)acrylic copolymer and , an adhesive composition varnish containing a curing accelerator and a filler) was obtained.
・Epoxy group-containing acrylic copolymer (HTR-860P-3 (trade name), manufactured by Nagase ChemteX Corporation, weight average molecular weight 800,000): 16 parts by mass ・Curing accelerator (Curezol 2PZ-CN (trade name), Manufactured by Shikoku Kasei Kogyo Co., Ltd., 1-cyanoethyl-2-phenylimidazole (Curezol is a registered trademark) 0.1 part by mass

A polyethylene terephthalate film (thickness: 35 μm) that had been subjected to a release treatment on one side was prepared. A varnish for forming an adhesive layer was applied to the release-treated surface using an applicator, and then heated and dried at 140° C. for 5 minutes. Thereby, a laminate (die bonding film) consisting of a polyethylene terephthalate film (carrier film) and a 25 μm thick adhesive layer (B stage state) formed thereon was obtained.

[Production of integrated dicing and die bonding film]
A die bonding film consisting of an adhesive layer and a carrier film was cut into a circle with a diameter of 335 mm together with the carrier film. A dicing film from which the polyethylene terephthalate film had been peeled was attached to the cut die bonding film at room temperature, and then left at room temperature for one day. Thereafter, the dicing film was cut into a circle with a diameter of 370 mm to obtain a laminate. A region of the adhesive layer of the thus obtained laminate corresponding to the wafer attachment position (first region of the adhesive layer) was irradiated with ultraviolet rays in the following manner. That is, a pulsed xenon lamp was used to partially irradiate ultraviolet rays at a dose of 70 W and 300 mJ/cm ² . Note that the ultraviolet rays were irradiated using a blackout curtain to a portion with an inner diameter of 318 mm from the center of the film. In this way, a plurality of integrated dicing and die bonding films of Example 1 were obtained for use in various evaluation tests described below.

<Example 2>
A plurality of integrated dicing and die bonding films of Example 2 were obtained in the same manner as in Example 1, except that the amount of ultraviolet irradiation was changed from 300 mJ/cm ² to 200 mJ/cm ² .

<Example 3>
A plurality of integrated dicing and die bonding films of Example 3 were obtained in the same manner as in Example 1, except that the amount of ultraviolet irradiation was changed from 300 mJ/cm ² to 500 mJ/cm ² .

<Example 4>
The photopolymerization initiator (B-1) used when producing the dicing film was replaced with the photopolymerization initiator (B-2) (2-hydroxy-1-{4-[4-(2-hydroxy-2-methyl -propionyl)-benzyl]-phenyl}-2-methyl-propan-1-one, manufactured by Ciba Specialty Chemicals Co., Ltd., Irgacure 127, "Irgacure" is a registered trademark))) As a result, a plurality of integrated dicing and die bonding films of Example 4 were obtained.

<Example 5>
A plurality of dicing dies of Example 5 were prepared in the same manner as in Example 3, except that the acrylic resin (A-1) used in producing the dicing film was changed to acrylic resin (A-2). A bonded integrated film was obtained.

<Comparative example 1>
A plurality of dicing dies of Comparative Example 1 were prepared in the same manner as in Example 1, except that the acrylic resin (A-1) used in producing the dicing film was changed to acrylic resin (A-3). A bonded integrated film was obtained.

[Evaluation test]
(1) Measurement of the adhesive force (30° peel strength) of the adhesive layer to the adhesive layer The adhesive force (F1) of the first region of the adhesive layer to the adhesive layer and the second region of the adhesive layer to the adhesive layer The adhesive force (F2) in the area was evaluated by measuring the 30° peel strength. Note that F1 corresponds to the adhesive force of the first region of the adhesive layer after irradiating the adhesive layer with ultraviolet rays, and F2 corresponds to the adhesive force of the first region of the adhesive layer before irradiating the adhesive layer with ultraviolet rays. This corresponds to the adhesive strength of the area. Therefore, F1 uses the dicing/die bonding integrated film after irradiation with ultraviolet rays in [Preparation of dicing/die bonding integrated film], and F2 uses the laminate before irradiation with ultraviolet rays. 30° peel strength) was measured. The measurement samples were obtained by preparing a dicing/die bonding integrated film and a laminate, and cutting them into pieces each having a width of 25 mm and a length of 100 mm. Using a tensile tester (manufactured by Shimadzu Corporation, Autograph "AGS-1000"), the peel strength of the first region of the adhesive layer and the adhesive after irradiation of ultraviolet rays to the adhesive layer were measured from each measurement sample. The peel strength of the first region of the adhesive layer before the layer was irradiated with ultraviolet light (the peel strength of the second region of the adhesive layer relative to the adhesive layer) was measured. The measurement conditions were a peeling angle of 30° and a peeling rate of 60 mm/min. Incidentally, the storage of the samples and the measurement of peel strength were performed under an environment of a temperature of 23° C. and a relative humidity of 40%. The results are shown in Table 2.

(2) Measurement of adhesive strength (90° peel strength) of the adhesive layer to the stainless steel substrate The adhesive strength of the second region of the adhesive layer to the stainless steel substrate was evaluated by measuring the 90° peel strength. Note that the adhesive force corresponds to the adhesive force of the adhesive layer on the stainless steel substrate before irradiation with ultraviolet rays. Therefore, the adhesive force (90° peel strength) was measured using the laminate before irradiation with ultraviolet rays in [Preparation of dicing/die bonding integrated film]. The measurement sample was obtained by preparing a laminate, cutting it into a piece with a width of 25 mm and a length of 100 mm, and attaching the adhesive layer side to a stainless steel substrate (SUS430BA). Using a tensile tester (manufactured by Shimadzu Corporation, Autograph "AGS-1000"), the peel strength of the adhesive layer from the measurement sample to the stainless steel substrate was measured. The measurement conditions were a peeling angle of 90° and a peeling rate of 50 mm/min. The results are shown in Table 2.

(3) Measurement of curing shrinkage rate of adhesive layer Two polyethylene terephthalate films (width 450 mm, length 500 mm, thickness 38 μm) with one side subjected to mold release treatment were prepared. An active energy ray-curable adhesive varnish was applied to the release-treated surface of a polyethylene terephthalate film using an applicator, and then dried at 80°C for 5 minutes to form an adhesive layer. . Next, the release-treated side of another polyethylene terephthalate film and the adhesive layer are bonded together at room temperature and pressed with a rubber roll to form the polyethylene terephthalate film and the 30 μm thick adhesive layer. A laminate consisting of a polyethylene terephthalate film and a polyethylene terephthalate film was obtained. A plurality of such laminates were produced. Next, one side of the polyethylene terephthalate film of the laminate is peeled off, the adhesive layers are laminated together without voids, and this is adhered using another laminate until the thickness of the adhesive layer is about 1 mm. By repeating the lamination of the agent layers, a laminate consisting of two polyethylene terephthalate films and an adhesive layer with a thickness of about 1 mm sandwiched therebetween was obtained.

The obtained laminate was punched out to a size of 10 mm, the polyethylene terephthalate film was peeled off from both sides, and the punch was placed on a glass slide so as to avoid voids. Next, a sample was obtained by similarly punching out a piece of aluminum foil with one side black to a size of 10 mm and placing it on the top surface of the adhesive layer on the opposite side from the slide glass. The obtained sample was irradiated with ultraviolet rays under the same conditions as [Preparation of integrated dicing and die bonding film], and the ultraviolet rays were measured using a resin curing shrinkage measurement device (Custron, manufactured by Acro Edge Co., Ltd.). The curing shrinkage rate was measured from the difference in thickness excluding the slide glass and aluminum foil before and after irradiation. The results are shown in Table 2.

(4) Measurement of chip edge peel strength Edge peel strength is measured through the following steps. FIGS. 9(a), 9(b), and 9(c) are cross-sectional views schematically showing the process of measuring edge peel strength.
- Step of attaching a 50 μm thick silicon wafer Ws to the adhesive layer 5 and attaching a dicing ring DR to the second surface F2 of the adhesive layer 3 (see FIG. 9(a))
- Process of singulating the silicon wafer Ws and the adhesive layer 5 into a plurality of chips Ta with adhesive pieces (a laminate of the chip Ts and the adhesive piece 5p) (see FIG. 9(b))
- At a temperature of 23° C., the center part of the chip Ta with the adhesive piece is pushed in from the base layer 1 side at a speed of 60 mm/min (see FIG. 9(c)), and the edge of the chip Ta with the adhesive piece peels off from the adhesive layer 3. Process of measuring edge peel strength when

First, a dicing/die bonding integrated film was attached to a silicon wafer (diameter: 12 inches, thickness: 50 μm) and a dicing ring under the following conditions (see FIG. 9(a)). The elongation in the MD direction of the dicing/die bonding integrated film after attaching the silicon wafer and the dicing ring was about 1.0 to 1.3%.

<Pasting conditions>
・Packing device: DFM2800 (manufactured by DISCO Co., Ltd.)
・Application temperature: 70℃
・Application speed: 10mm/s
・Application tension level: Level 6

Next, the silicon wafer with the integrated dicing and die bonding film was diced into a plurality of chips (size 2 mm x 2 mm) with adhesive chips by blade dicing (see FIG. 9(b)).

<Dicing conditions>
・Dicer: DFD6361 (manufactured by DISCO Co., Ltd.)
・Blade: ZH05-SD4000-N1-70-BB (manufactured by DISCO Co., Ltd.)
・Blade rotation speed: 40000rpm
・Dicing speed: 30mm/sec ・Blade height: 90μm
・Cutting depth from the surface of the adhesive layer to the base material layer: 20 μm
・Water amount during dicing Blade cooler: 1.5L/min Shower: 1.0L/min,
Spray: 1.0L/min

One day after dicing, the edge peel strength of the adhesive chip was measured by pushing the adhesive chip with a pressing jig P from the base layer side under the following measurement conditions (see FIG. 9(c)). FIG. 10 is a graph showing an example of the relationship between displacement (mm) due to pushing and pushing force (N). When the edge of the chip peels off, as shown in FIG. 10, the pushing force temporarily decreases and a change point occurs in the graph. The value of the pushing force at this point of change is defined as edge peel strength. Note that, before the measurement, the surface of the base material layer corresponding to the central part of the chip was marked with an oil-based pen. FIG. 11 is a plan view schematically showing a state in which a mark is attached to a position corresponding to the center of a chip to be measured. The mark M at the center of the chip was measured and identified with a ruler. The measurement was performed with N=10. After measuring one chip, the next measurement was performed with an interval of three chips (see FIG. 11). The results are shown in Table 2.

<Measurement conditions>
・Measuring device: Small tabletop testing machine EZ-SX (manufactured by Shimadzu Corporation)
・Load cell: 50N
・Pushing jig: ZTS series attachment (shape: conical, manufactured by Imada Co., Ltd.)
・Pushing speed: 60mm/min ・Temperature: 23℃
・Humidity: 45±10%

(5) Evaluation of Pickup Properties After measuring the edge peel strength described above, 100 chips with adhesive chips were picked up under the following conditions.

<Pickup conditions>
・Die bonder device: DB800-HSD (manufactured by Hitachi High-Technologies Corporation)
- Push-up pin: EJECTOR NEEDLE SEN2-83-05 (diameter: 0.7 mm, tip shape: hemisphere with a radius of 350 μm, manufactured by Micromechanics)
・Push-up height: 200μm
・Pushing speed: 1mm/sec,
Note that one push-up pin was placed at the center of the chip. A sample with a pickup success rate of 100% was graded "A," a sample with a pickup success rate of 70% or more but less than 100% was graded "B," and a sample with a pickup success rate of less than 70% was graded "C." The results are shown in Table 2.

As shown in Table 2, the dicing/die bonding integrated films of Examples 1 to 5 had better pick-up properties than the dicing/die bonding integrated film of Comparative Example 1. Specifically, Comparative Example 1 has a larger difference in (F1-F2) than Examples 1 to 5, so the curing shrinkage rate and edge peel strength are also higher than Examples 1 to 5, and the pick-up property is sufficient. It wasn't. From the above results, the integrated dicing and die bonding film of the present disclosure can be applied to the manufacturing process of semiconductor devices, which includes the process of singulating a wafer into multiple small chips (area: 0.1 to 9 mm ² ). It was confirmed that the adhesive layer had excellent pick-up properties.

DESCRIPTION OF SYMBOLS 1... Base material layer, 3... Adhesive layer, 3a... First region, 3b... Second region, 5... Adhesive layer, 5P, 5p... Adhesive piece, 5C... Cured product, 8... DAF, 10 ... Dicing/die bonding integrated film (film), 42... Pin, 44... Suction collet, 50... Sealing layer, 60... Structure, 70... Substrate, 80... Support plate, 100... Semiconductor device, DR... Dicing ring , F1...first surface, F2...second surface, M...mark, P...pushing jig, Rw...region, S1, S2, S3, S4, S, Ts...chip, Ta...chip with adhesive piece, W ...Wafer, Ws...Silicon wafer, W1, W2, W3, W4...Wire.

Claims (12)

a base material layer;
an adhesive layer made of an active energy ray-curable adhesive, having a first surface facing the base layer and a second surface opposite to the first surface;
an adhesive layer provided to cover a central portion of the second surface;
Equipped with
The adhesive layer has a first region including at least a region corresponding to a wafer attachment position in the adhesive layer, and a second region located so as to surround the first region,
The first region is a region in which adhesive strength is reduced compared to the second region due to irradiation with active energy rays,
The adhesive force of the first region of the adhesive layer to the adhesive layer is F1 (N/25 mm), which is measured at a temperature of 23°C, a peeling angle of 30°, and a peeling speed of 60 mm/min, and a temperature of 23°C. When the adhesive force of the second region of the adhesive layer to the adhesive layer is F2 (N/25 mm), measured under the conditions of a peeling angle of 30° and a peeling speed of 60 mm/min, F2 and F1 The difference (F2-F1) is 6.5 to 9.0N/25mm,
Applied to the manufacturing process of semiconductor devices, which includes the step of dividing a wafer into multiple chips with an area of 0.1 to 9 ^mm2 .
Integrated dicing and die bonding film. The difference between F2 and F1 (F2-F1) is 7.0 to 9.0 N/25 mm,
The integrated dicing and die bonding film according to claim 1. The F1 is 1.1 to 4.5N/25mm,
The dicing/die bonding integrated film according to claim 1 or 2. The F1 is 1.1 to 3.0N/25mm,
The dicing/die bonding integrated film according to any one of claims 1 to 3. The adhesion force of the second region of the adhesive layer to the stainless steel substrate is 0.2 N/25 mm or more, measured at a temperature of 23° C., a peeling angle of 90°, and a peeling speed of 50 mm/min.
The integrated dicing and die bonding film according to any one of claims 1 to 4. The active energy ray-curable adhesive contains a (meth)acrylic resin having a functional group capable of chain polymerization,
the functional group is at least one selected from an acryloyl group and a methacryloyl group,
The content of the functional group in the (meth)acrylic resin is 0.1 to 1.2 mmol/g,
The integrated dicing and die bonding film according to any one of claims 1 to 5. The active energy ray-curable adhesive further includes a crosslinking agent,
The content of the crosslinking agent with respect to the total mass of the active energy ray-curable adhesive is 0.1 to 15% by mass,
The integrated dicing and die bonding film according to claim 6. The crosslinking agent is a reaction product of a polyfunctional isocyanate having two or more isocyanate groups in one molecule and a polyhydric alcohol having three or more hydroxy groups in one molecule,
The integrated dicing and die bonding film according to claim 7. The irradiation amount of the active energy ray is 10 to 1000 mJ/cm ² ,
The integrated dicing and die bonding film according to any one of claims 1 to 8. The adhesive layer is made of an adhesive composition containing a reactive group-containing (meth)acrylic copolymer, a curing accelerator, and a filler.
The integrated dicing and die bonding film according to any one of claims 1 to 9. A method for producing a dicing/die bonding integrated film according to any one of claims 1 to 10, comprising:
A step of producing a laminate including an adhesive layer made of an active energy ray-curable adhesive on the surface of the base layer, and the adhesive layer formed on the surface of the adhesive layer;
irradiating a region of the adhesive layer included in the laminate that will become the first region with active energy rays;
in this order,
A method for manufacturing a dicing/die bonding integrated film. A step of preparing a dicing/die bonding integrated film according to any one of claims 1 to 10;
Attaching a wafer to the adhesive layer of the dicing/die bonding integrated film and attaching a dicing ring to the second surface of the adhesive layer;
A step of singulating the wafer into a plurality of chips;
picking up the chips from the adhesive layer together with adhesive pieces obtained by dividing the adhesive layer into pieces;
mounting the chip on a substrate or other chip via the adhesive strip;
Equipped with
A method for manufacturing a semiconductor device.

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