CN114641848A - Dicing die-bonding integrated film, method for manufacturing the same, and method for manufacturing semiconductor device - Google Patents

Dicing die-bonding integrated film, method for manufacturing the same, and method for manufacturing semiconductor device Download PDF

Info

Publication number
CN114641848A
CN114641848A CN202080077215.7A CN202080077215A CN114641848A CN 114641848 A CN114641848 A CN 114641848A CN 202080077215 A CN202080077215 A CN 202080077215A CN 114641848 A CN114641848 A CN 114641848A
Authority
CN
China
Prior art keywords
adhesive layer
pressure
sensitive adhesive
meth
active energy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202080077215.7A
Other languages
Chinese (zh)
Inventor
木村尚弘
森修一
田泽强
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Holdings Corp
Original Assignee
Showa Denko KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko KK filed Critical Showa Denko KK
Publication of CN114641848A publication Critical patent/CN114641848A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • C09J7/381—Pressure-sensitive adhesives [PSA] based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C09J7/385—Acrylic polymers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/06—Non-macromolecular additives organic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J175/00—Adhesives based on polyureas or polyurethanes; Adhesives based on derivatives of such polymers
    • C09J175/04—Polyurethanes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Dicing (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)
  • Die Bonding (AREA)
  • Laminated Bodies (AREA)

Abstract

The invention discloses a cutting crystal grain joint integrated film. The dicing die-bonding integrated film includes: the pressure-sensitive adhesive comprises a base material layer, a pressure-sensitive adhesive layer having a1 st surface facing the base material layer and a 2 nd surface opposite to the 1 st surface, and an adhesive layer provided so as to cover a central portion of the 2 nd surface. The pressure-sensitive adhesive layer is provided with a1 st area and a 2 nd area, wherein the 1 st area comprises an area corresponding to the attachment position of a wafer in the adhesive layer, the 2 nd area is arranged in a mode of surrounding the 1 st area, and the 1 st area is an area in a state that the adhesive force is reduced compared with the 2 nd area. In the pressure-sensitive adhesive layer, the difference between the adhesive force of the 1 st region of the pressure-sensitive adhesive layer to the adhesive layer and the adhesive force of the 2 nd region of the pressure-sensitive adhesive layer to the adhesive layer, measured under a prescribed condition, is 6.5 to 9.0N/25 mm.

Description

Dicing die-bonding integrated film, method for manufacturing the same, and method for manufacturing semiconductor device
Technical Field
The present invention relates to a dicing die-bonding integrated film, a method for manufacturing the same, and a method for manufacturing a semiconductor device.
Background
The semiconductor device is manufactured through the following steps. First, a dicing step is performed in a state where the pressure-sensitive adhesive film for dicing is attached to a wafer. Thereafter, an expansion (expanding) step, a pick-up (pick-up) step, a mounting step, a die bonding (die bonding) step, and the like are performed.
In a manufacturing process of a semiconductor device, a film called a dicing die-bonding integral film is used. The film has a structure in which a base layer, a pressure-sensitive adhesive layer, and an adhesive layer are sequentially stacked, and is used, for example, as follows. First, the surface on the adhesive layer side is attached to a wafer, and the wafer is diced while being fixed by a dicing ring. Thus, the wafer is singulated into a plurality of chips. Subsequently, the adhesive force of the pressure-sensitive adhesive layer to the adhesive layer is weakened by irradiating the pressure-sensitive adhesive layer with an active energy ray, and thereafter, the chip together with the adhesive layer is singulated to obtain an adhesive sheet, which is picked up from the pressure-sensitive adhesive layer. Thereafter, the semiconductor device is manufactured through a process of mounting the chip on the substrate via the adhesive sheet. A laminate including the Die obtained through the dicing step and the adhesive sheet attached thereto is referred to as DAF (Die Attach Film).
As described above, the pressure-sensitive adhesive layer (die-cut film) in which the adhesive force is weakened by the irradiation of the active energy ray is called an active energy ray-curable type. In contrast, a pressure-sensitive adhesive layer in which the adhesive strength is kept constant without being irradiated with active energy rays in the manufacturing process of a semiconductor device is referred to as a pressure-sensitive adhesive type. For the user (mainly, semiconductor device manufacturer), the dicing die-bonding integral type film having the pressure-sensitive adhesive layer has the following advantages: a process of irradiating active energy rays need not be performed, and equipment for the process is not required. In patent document 1, the pressure-sensitive adhesive layer is an active energy ray-curable type in that it contains a component curable by an active energy ray. On the other hand, a dicing die-bonding integral film is disclosed which is a pressure-sensitive type film in that only a predetermined portion of a pressure-sensitive adhesive layer is irradiated with an active energy ray in advance, and a user does not need to irradiate the active energy ray in a process for manufacturing a semiconductor device.
Prior art documents
Patent document
Patent document 1: japanese patent No. 4443962
Disclosure of Invention
Technical problem to be solved by the invention
Generally, cutting the pressure-sensitive adhesive layer of the die-bonding integral type film requires low adhesive bonding force between the pressure-sensitive adhesive layer and the adhesive layer. If the adhesive force is too high, a pickup error may occur in the chip pickup process, and the yield may be lowered. However, the present inventors have found that: if the chip to be fabricated is reduced in size by dicing (for example, an area of 0.1 to 9mm in a plan view)2) The pickup property of the chip is not necessarily affected by the pressure-sensitive adhesiveThe adhesive force between the adhesive layer and the adhesive layer is dominant, and the peeling of the chip edge from the pressure-sensitive adhesive layer (hereinafter, referred to as "edge peeling") is dominant in the pickup property. Namely, it is assumed that: the pickup property of the small chip is mainly governed by the edge peel strength of the chip to which the adhesive sheet is attached, and if edge peeling occurs once due to push-up by the pin, then interfacial peeling between the pressure-sensitive adhesive layer and the adhesive layer thereafter proceeds smoothly.
The influence factor of the edge peel strength includes, for example, cure shrinkage of the pressure-sensitive adhesive layer. Generally, after the dicing step, burrs (chips) are generated on the dicing line due to the mixing of the adhesive layer, the pressure-sensitive adhesive layer, the wafer, and the like. If the pressure-sensitive adhesive layer is an active energy ray-curable type, burrs (chips) and curing of the pressure-sensitive adhesive layer may occur due to irradiation with active energy rays, which may result in a significant increase in the edge peel strength. In the case where the pressure-sensitive adhesive layer is cured in advance before the dicing step, the step of irradiating with an active energy ray is not necessary, and therefore, the above-mentioned influence is not exerted, but the edge peel strength may be increased by an anchor effect at the interface of the adhesive layer due to curing shrinkage of the pressure-sensitive adhesive layer. As a result of intensive studies on curing shrinkage of the pressure-sensitive adhesive layer, the present inventors have found that the larger the difference between the adhesive force of the pressure-sensitive adhesive layer to the adhesive layer before and after irradiation of an active energy ray, the higher the magnitude of curing shrinkage tends to be. Therefore, the present inventors considered that the edge peel strength can be weakened by adjusting the difference between the adhesive force of the pressure-sensitive adhesive layer before irradiation of the active energy ray and the adhesive force of the pressure-sensitive adhesive layer after irradiation of the active energy ray (in other words, the difference between the adhesive force of the pressure-sensitive adhesive layer at the non-irradiated portion of the active energy ray and the adhesive force of the pressure-sensitive adhesive layer at the irradiated portion of the active energy ray), and have worked on the development of a dicing die-bonding integral film having excellent pick-up properties.
The main object of the present invention is to provide a dicing die-bonding integral film and a method for manufacturing the same, which is applied to a wafer including singulation into a plurality of small chips (area 0).1～9mm2) The process for producing a semiconductor device according to (1), and further comprises a pressure-sensitive adhesive layer having excellent pickup properties.
Means for solving the technical problem
One aspect of the present invention relates to a dicing die-bonding integral type film. The film comprises a base material layer, a pressure-sensitive adhesive layer comprising an active energy ray-curable pressure-sensitive adhesive having a1 st surface facing the base material layer and a 2 nd surface opposite to the 1 st surface, and an adhesive layer provided so as to cover a central portion of the 2 nd surface. The pressure-sensitive adhesive layer is provided with a1 st area and a 2 nd area, wherein the 1 st area at least comprises an area corresponding to the attachment position of the wafer in the adhesive layer, the 2 nd area is arranged in a mode of surrounding the 1 st area, and the 1 st area is an area which is in a state that the adhesive force is reduced compared with the 2 nd area due to the irradiation of active energy rays. In the pressure-sensitive adhesive layer, when the adhesive strength of the 1 st region of the pressure-sensitive adhesive layer to the adhesive layer measured at a temperature of 23 ℃, a peel angle of 30 DEG and a peel speed of 60 mm/min is f1(N/25mm), and the adhesive strength of the 2 nd region of the pressure-sensitive adhesive layer to the adhesive layer measured at a temperature of 23 ℃, a peel angle of 30 DEG and a peel speed of 60 mm/min is f2(N/25mm), the difference between f2 and f1 (f2-f1) is 6.5 to 9.0N/25 mm. The film is applied to the wafer singulation process including the step of singulating the wafer into 0.1-9 mm2And a step of forming a plurality of chips having an area.
According to the dicing die-bonding integral film, since curing shrinkage of the pressure-sensitive adhesive layer can be suppressed to weaken the edge peel strength, it can be applied to a dicing process including singulation of a wafer into a plurality of small chips (0.1 to 9 mm)2Area) and can realize excellent pickup from the pressure-sensitive adhesive layer.
The difference (f2-f1) between f2 and f1 may be 7.0 to 9.0N/25 mm.
From the viewpoint of achieving more excellent pickup from the pressure-sensitive adhesive layer, f1 (the adhesive force of the 1 st region to the adhesive layer measured under the conditions of a temperature of 23 ℃, a peel angle of 30 ° and a peel speed of 60 mm/min) may be 1.1 to 4.5N/25mm or 1.1 to 3.0N/25 mm.
From the viewpoint of suppressing ring peeling in the dicing step, the adhesive strength of the 2 nd region of the pressure-sensitive adhesive layer to the stainless substrate may be 0.2N/25mm or more. The adhesive strength is the peel strength measured at a temperature of 23 ℃, a peel angle of 90 ° and a peel speed of 50 mm/min.
The active energy ray-curable pressure-sensitive adhesive may contain a (meth) acrylic resin having a chain polymerizable functional group. When such a (meth) acrylic resin is contained, the functional group may be at least one selected from the group consisting of an acryloyl group and a methacryloyl group, and the content of the functional group in the (meth) acrylic resin may be 0.1 to 1.2 mmol/g.
The active energy ray-curable pressure-sensitive adhesive may further contain a crosslinking agent. When the pressure-sensitive adhesive further contains such a crosslinking agent, the content of the crosslinking agent may be 0.1 to 15% by mass based on the total mass of the active energy ray-curable pressure-sensitive adhesive. The crosslinking agent may be a reaction product of a polyfunctional isocyanate having two or more isocyanate groups in one molecule and a polyol having three or more hydroxyl groups in one molecule.
The dose of the active energy ray may be 10 to 1000mJ/cm2。
The adhesive layer may be composed of an adhesive composition including a (meth) acrylic copolymer containing a reactive group, a curing accelerator, and a filler.
One aspect of the present invention relates to a method for manufacturing a cut die-bonded integrated film. The manufacturing method sequentially comprises: a step of producing a laminate on the surface of the base material layer, the laminate including a pressure-sensitive adhesive layer composed of an active energy ray-curable pressure-sensitive adhesive and an adhesive layer formed on the surface of the pressure-sensitive adhesive layer; and a step of irradiating an area to be a1 st area of the pressure-sensitive adhesive layer included in the laminate with an active energy ray.
One aspect of the present invention relates to a method of manufacturing a semiconductor device. The manufacturing method comprises: preparing the dicing die-bonding integrated film; attaching the wafer to the adhesive layer of the dicing die bonding integrated film, and attaching the dicing ring to the 2 nd surface of the pressure-sensitive adhesive layer; a step of singulating the wafer into a plurality of chips; picking up the chip and the adhesive layer from the pressure-sensitive adhesive layer together with an adhesive sheet obtained by singulating the chip and the adhesive layer; and a step of mounting the chip on a substrate or other chips via the adhesive sheet.
Namely, the manufacturing method comprises: preparing a dicing die-bonding integrated film including a base material layer, a pressure-sensitive adhesive layer composed of an active energy ray-curable pressure-sensitive adhesive having a1 st surface facing the base material layer and a 2 nd surface opposite to the 1 st surface, and an adhesive layer provided so as to cover a central portion of the 2 nd surface of the pressure-sensitive adhesive layer; attaching the wafer to the adhesive layer of the dicing die bonding integrated film, and attaching the dicing ring to the 2 nd surface of the pressure-sensitive adhesive layer; a step of singulating the wafer into a plurality of chips; picking up the chip and the adhesive layer from the pressure-sensitive adhesive layer together with an adhesive sheet obtained by singulating the chip and the adhesive layer; and a step of mounting the chip on a substrate or other chips via the adhesive sheet. The pressure-sensitive adhesive layer has a1 st region corresponding to a region to which the wafer is attached and a 2 nd region corresponding to a region to which the dicing ring is attached in the adhesive layer, and the 1 st region is a region in which the adhesive strength is reduced from that of the 2 nd region by irradiation with the active energy ray. In the pressure-sensitive adhesive layer, when the adhesive strength of the 1 st region of the pressure-sensitive adhesive layer to the adhesive layer measured at a temperature of 23 ℃, a peel angle of 30 DEG and a peel speed of 60 mm/min is f1(N/25mm), and the adhesive strength of the 2 nd region of the pressure-sensitive adhesive layer to the adhesive layer measured at a temperature of 23 ℃, a peel angle of 30 DEG and a peel speed of 60 mm/min is f2(N/25mm), the difference between f2 and f1 (f2-f1) is 6.5 to 9.0N/25 mm.
Effects of the invention
According to the present invention, there is provided a dicing die-bonding integral film and a method for manufacturing the same, the dicing die-bonding integral film being applied to a wafer including a plurality of small chips (having an area of 0.1 to 9 mm) singulated2) The process for producing a semiconductor device according to (1), and further comprises a pressure-sensitive adhesive layer having excellent pickup properties. Further, the present invention provides a method for manufacturing a semiconductor device using such a dicing die-bonding integrated film.
Drawings
In fig. 1, fig. 1(a) is a plan view showing an embodiment of dicing a die-bonding integral film, and fig. 1(B) is a schematic cross-sectional view taken along line B-B shown in fig. 1 (a).
Fig. 2 is a schematic view showing a state in which a dicing ring is attached to the peripheral edge portion of the pressure-sensitive adhesive layer of the dicing die-bonding integral film, and a wafer is attached to the surface of the adhesive layer.
Fig. 3 is a cross-sectional view schematically showing the state of measuring the peel strength of the pressure-sensitive adhesive layer to the adhesive layer at 30 °.
Fig. 4 is a schematic cross-sectional view of one embodiment of a semiconductor device.
In fig. 5, fig. 5(a), 5(b), 5(c), and 5(d) are cross-sectional views schematically showing a process of manufacturing a DAF (laminate of a die and an adhesive sheet).
Fig. 6 is a cross-sectional view schematically showing a process of manufacturing the semiconductor device shown in fig. 4.
Fig. 7 is a cross-sectional view schematically showing a process of manufacturing the semiconductor device shown in fig. 4.
Fig. 8 is a cross-sectional view schematically showing a process of manufacturing the semiconductor device shown in fig. 4.
Fig. 9(a), 9(b), and 9(c) are cross-sectional views schematically showing a step of measuring the edge peel strength.
Fig. 10 is a graph showing an example of the relationship between the displacement (mm) and the thrust (N) due to the pushing-in.
Fig. 11 is a plan view schematically showing a state in which a mark is attached to a position corresponding to the central portion of the chip to be measured.
Detailed Description
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the following description, the same or corresponding portions are denoted by the same reference numerals, and redundant description is omitted. The present invention is not limited to the following embodiments. In the present specification, the term (meth) acrylic refers to acrylic acid or methacrylic acid, and the same applies to other similar expressions such as (meth) acrylate.
< dicing die-bonding integral film >
Fig. 1(a) is a plan view showing a cut-die-bonded integral film according to the present embodiment, and fig. 1(B) is a schematic cross-sectional view taken along the line B-B in fig. 1. The dicing die-bonding integrated film 10 (hereinafter, may be simply referred to as "film 10") can be used for dicing the wafer W into pieces of 0.1 to 9mm2A process of manufacturing a semiconductor device in a step of forming a plurality of chips having an area (and a subsequent pickup step) (see fig. 5c and 5 d).
The film 10 includes, in order, a base layer 1, a pressure-sensitive adhesive layer 3 having a1 st surface F1 facing the base layer 1 and a 2 nd surface F2 opposite to the 1 st surface F1, and an adhesive layer 5 provided so as to cover a central portion of the 2 nd surface F2 of the pressure-sensitive adhesive layer 3. In the present embodiment, a mode in which a laminate of one pressure-sensitive adhesive layer 3 and one adhesive layer 5 is formed on a square base material layer 1 is exemplified, but a mode in which the base material layer 1 has a predetermined length (for example, 100m or more) and the laminate of the pressure-sensitive adhesive layer 3 and the adhesive layer 5 is arranged at a predetermined interval so as to be aligned along the longitudinal direction thereof may be adopted.
(pressure-sensitive adhesive layer)
The pressure-sensitive adhesive layer 3 has: the 1 st region 3a at least includes a region Rw corresponding to the attachment position of the wafer W in the adhesive layer 5; and a 2 nd region 3b provided so as to surround the 1 st region 3 a. The dotted lines in fig. 1(a) and 1(b) indicate the boundaries between the 1 st region 3a and the 2 nd region 3 b. The 1 st region 3a and the 2 nd region 3b are composed of the same composition (active energy ray-curable pressure-sensitive adhesive) before being irradiated with active energy rays. The 1 st region 3a is a region in which the adhesive force is reduced as compared with the 2 nd region 3b by the irradiation of the active energy ray. The 2 nd region 3b is a region to which the dicing ring DR is attached (refer to fig. 2). The 2 nd region 3b is a region not irradiated with the active energy ray and has a high adhesive force to the crystal ring DR. The active energy ray may be selected from ultraviolet ray and electricityAt least one of the sub-beam and the visible light may be ultraviolet light. The dose of the active energy ray may be, for example, 10 to 1000mJ/cm2、100～700mJ/cm2Or 200 to 500mJ/cm2。
When the adhesive strength of the 1 st region 3a of the pressure-sensitive adhesive layer 3 to the adhesive layer 5 is f1(N/25mm), and the adhesive strength of the 2 nd region 3b of the pressure-sensitive adhesive layer 3 to the adhesive layer 5 is f2(N/25mm), the difference between f2 and f1 (f2-f1) is 6.5 to 9.0N/25mm, and may be 7.0 to 9.0N/25 mm. Here, f1 and f2 are 30 ° peel strengths measured at a temperature of 23 ℃, a peel angle of 30 ° and a peel speed of 60 mm/min. Fig. 3 is a cross-sectional view schematically showing the state of measuring the 30 ° peel strength of the pressure-sensitive adhesive layer 3 in a state where the adhesive layer 5 of a measurement sample (width 25mm × length 100mm) is fixed to the support plate 80. Fig. 3 may be a condition of measurement f 1. The 2 nd region 3b of the pressure-sensitive adhesive layer 3 is a region in the same state as the pressure-sensitive adhesive layer before irradiation with active energy rays, and may also be referred to as an active energy ray non-irradiated region. Therefore, f2 may be the adhesive force measured by replacing the pressure sensitive adhesive layer 3 in fig. 3 with a pressure sensitive adhesive layer 3 having no region 3a of 1. Since the state of the pressure-sensitive adhesive layer 3 having no 1 st region 3a is a state before the pressure-sensitive adhesive layer is irradiated with an active energy ray, f2 can be obtained, for example, as follows: on the surface of the base material layer 1, the adhesive force of the pressure-sensitive adhesive layer (the pressure-sensitive adhesive layer 3 having no region 3a of 1) to the adhesive layer 5 was measured before irradiation with active energy rays using a laminate including a pressure-sensitive adhesive layer composed of an active energy ray-curable pressure-sensitive adhesive and the adhesive layer 5 formed on the surface of the pressure-sensitive adhesive layer. By setting (f2-f1) within this range, curing shrinkage of the pressure-sensitive adhesive layer can be suppressed to weaken the edge peel strength, and therefore, the pressure-sensitive adhesive can be applied to a method including singulating a wafer into a plurality of small chips (having an area of 0.1 to 9 mm)2) The process of (3) and can realize excellent pickup from the pressure-sensitive adhesive layer 3. (f2-f1) may be 6.6N/25mm or more, 6.8N/25mm or more, 7.0N/25mm or more, or 7.2N/25mm or more, or may be 8.8N/25mm or less, 8.6N/25mm or less, 8.4N/25mm or less, or 8.2N/25mm or less.
As described above, the film 10 can also be suitably used for the wafer singulation process including the step of singulating the wafer into 0.1 to 9mm2A process for manufacturing a semiconductor device including a plurality of small chips having an area (and a subsequent pickup process). The present inventors have paid attention to the fact that the size is 3mm X3 mm or less (area 9 mm)2Hereinafter), the difference between the pickup behavior of the small chip and the pickup behavior of the large chip having a size of, for example, about 8mm × 6mm was examined, and the difference (f2-f1) between the adhesive force of the 2 nd region 3b of the pressure-sensitive adhesive layer 3 to the adhesive layer 5 and the adhesive force of the 1 st region 3a of the pressure-sensitive adhesive layer 3 to the adhesive layer 5 was determined to be 6.5 to 9.0N/25 mm. The present inventors have found that edge peeling is a dominant factor in pickup properties in a small chip and that curing shrinkage is a main factor of an increase in edge peeling strength, and have found that by setting (f2-f1) to 6.5 to 9.0N/25mm, curing shrinkage can be suppressed and excellent pickup properties from the pressure-sensitive adhesive layer 3 can be achieved. Thus, by using the film 10, a semiconductor device can be manufactured with a sufficiently high yield.
The adhesive strength (f1) of the 1 st region 3a of the pressure-sensitive adhesive layer 3 to the adhesive layer 5 may be, for example, 1.1 to 4.5N/25mm or 1.1 to 3.0N/25 mm. f1 may be 1.2N/25mm or more, 1.5N/25mm or more, or 2.0N/25mm or more, or may be 4.0N/25mm or less, 3.7N/25mm or less, 3.5N/25mm or less, 3.2N/25mm or less, or 3.0N/25mm or less.
The 1 st region 3a having an adhesive force in the above range to the adhesive layer 5 is a region formed by irradiation with an active energy ray, and may be referred to as an active energy ray irradiation region. The present inventors have also found that the reduction of the adhesive force of the pressure-sensitive adhesive layer by the irradiation of the active energy ray affects the peeling of the edge portion of the DAF. That is, if the adhesive force of the 1 st region 3a is excessively reduced by the irradiation of the active energy ray, the 30 ° peel strength of the 1 st region 3a from the adhesive agent layer 5 is reduced, while, in the case where the pickup object is a small chip, the edge portion of the DAF tends to be less likely to peel, and the chip is likely to be broken due to excessive deformation or a pickup error. The lower limit of the adhesive force of the 1 st region 3a to the adhesive layer 5 (for example, 1.1N/25mm) can be said not to excessively decrease the adhesive force before the irradiation of the active energy ray, and thus the peeling of the edge portion of the DAF is likely to occur even in the case of a small chip. On the other hand, if the adhesive force of the 1 st region 3a to the adhesive agent layer 5 is too high, the pickup tends to be lowered. The upper limit (for example, 4.5N/25mm) of the adhesive force of the 1 st region 3a to the adhesive agent layer 5 can be referred to as a value at which the adhesive force before irradiation with the active energy ray is reduced to such an extent that excellent pickup is exhibited.
The adhesive strength (f2) of the 2 nd region 3b of the pressure-sensitive adhesive layer 3 to the adhesive layer 5 may be, for example, 8.0 to 11.5N/25 mm. f2 may be 8.5N/25mm or more, 9.0N/25mm or more, or 9.5N/25mm or more, or may be 11.0N/25mm or less, 10.8N/25mm or less, or 10.5N/25mm or less.
In the present embodiment, f1, f2, and (f2-f1) can be adjusted by adjusting, for example, the content of a chain-polymerizable functional group in the (meth) acrylic resin (the content of a functional group-introducing compound), the content of a crosslinking agent in the pressure-sensitive adhesive layer, and the irradiation dose of active energy rays, or by adding another resin (an acrylic monomer or oligomer, a urethane monomer or oligomer, or the like) or an adhesive (an adhesion promoter or the like).
The adhesive strength of the 2 nd region 3b of the pressure-sensitive adhesive layer 3 to the stainless substrate may be 0.2N/25mm or more. The adhesive bond has a 90 DEG peel strength measured at a temperature of 23 ℃, a peel angle of 90 DEG and a peel speed of 50 mm/min. Since the adhesive strength is 0.2N/25mm or more, ring peeling at the time of dicing can be sufficiently suppressed. The adhesion strength of the 2 nd region 3b of the pressure-sensitive adhesive layer 3 to the stainless substrate may be 0.25N/25mm or more or 0.3N/25mm or more, and may be 2.0N/25mm or less, 1.0N/25mm or less, 0.8N/25mm or less or 0.6N/25mm or less.
The pressure-sensitive adhesive layer before being irradiated with active energy rays is composed of, for example, an active energy ray-curable pressure-sensitive adhesive containing a (meth) acrylic resin, a photopolymerization initiator, and a crosslinking agent. The 2 nd region 3b not irradiated with the active energy ray may be of the same composition as the pressure-sensitive adhesive layer before irradiation with the active energy ray. The active energy ray-curable pressure-sensitive adhesive containing components will be described in detail below.
[ (meth) acrylic resin ]
The active energy ray-curable pressure-sensitive adhesive may contain a (meth) acrylic resin having a chain polymerizable functional group. In the case of including such a (meth) acrylic resin, the functional group may be at least one selected from an acryloyl group and a methacryloyl group. The content of the functional group in the (meth) acrylic resin may be 0.1 to 1.2 mmol/g. The content of the functional group in the (meth) acrylic resin may be 0.2mmol/g or more or 0.3mmol/g or more, or may be 1.0mmol/g or less, 0.8mmol/g or less, 0.7mmol/g or less, 0.6mmol/g or less or 0.5mmol/g or less. Since the content of the functional group is 0.1mmol/g or more, a region (the 1 st region 3a) where the adhesive force is appropriately decreased by irradiation with active energy rays tends to be easily formed, and on the other hand, since the content of the functional group is 1.2mmol/g or less, excellent pickup properties tend to be easily achieved.
The (meth) acrylic resin can be synthesized by a known method. Examples of the synthesis method include solution polymerization, suspension polymerization, emulsion polymerization, bulk polymerization, precipitation polymerization, gas phase polymerization, plasma polymerization, and supercritical polymerization. Further, as the kind of the polymerization reaction, in addition to radical polymerization, cationic polymerization, anionic polymerization, living radical polymerization, living cationic polymerization, living anionic polymerization, coordination polymerization, and immortalization polymerization, there may be mentioned a method such as ATRP (atom transfer radical polymerization) and RAFT (reversible addition fragmentation chain transfer polymerization). Among them, the synthesis by radical polymerization using the solution polymerization method has advantages such as good economy, high reaction rate, easy control of polymerization, and the like, and also has advantages such as being able to be prepared directly using a resin solution obtained by polymerization.
Here, a method for synthesizing a (meth) acrylic resin will be described in detail, taking as an example a method for obtaining a (meth) acrylic resin by radical polymerization using a solution polymerization method.
The monomer used for synthesizing the (meth) acrylic resin is not particularly limited as long as it has 1 (meth) acryloyl group in one molecule. Specific examples thereof include methyl (meth) acrylate, ethyl (meth) acrylate, butyl (meth) acrylate, isobutyl (meth) acrylate, tert-butyl (meth) acrylate, butoxyethyl (meth) acrylate, isoamyl (meth) acrylate, hexyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, heptyl (meth) acrylate, octyl heptyl (meth) acrylate, nonyl (meth) acrylate, decyl (meth) acrylate, undecyl (meth) acrylate, lauryl (meth) acrylate, tridecyl (meth) acrylate, tetradecyl (meth) acrylate, pentadecyl (meth) acrylate, hexadecyl (meth) acrylate, stearyl (meth) acrylate, behenyl (meth) acrylate, methoxypolyethylene glycol (meth) acrylate, n-butyl (meth) acrylate, decyl (meth) acrylate, undecyl (meth) acrylate, lauryl (meth) acrylate, and methoxy polyethylene glycol (meth) acrylate, Aliphatic (meth) acrylates such as ethoxypolyethylene glycol (meth) acrylate, methoxypropylene glycol (meth) acrylate, ethoxypolypropyleneglycol (meth) acrylate, and mono (2- (meth) acryloyloxyethyl) succinate; alicyclic (meth) acrylates such as cyclopentyl (meth) acrylate, cyclohexyl (meth) acrylate, cyclopentyl (meth) acrylate, dicyclopentyl (meth) acrylate, dicyclopentenyl (meth) acrylate, isobornyl (meth) acrylate, mono (2- (meth) acryloyloxyethyl) tetrahydrophthalate, and mono (2- (meth) acryloyloxyethyl) hexahydrophthalate; benzyl (meth) acrylate, phenyl (meth) acrylate, o-biphenyl (meth) acrylate, 1-naphthyl (meth) acrylate, 2-naphthyl (meth) acrylate, phenoxyethyl (meth) acrylate, p-cumylphenoxyethyl (meth) acrylate, o-phenylphenoxyethyl (meth) acrylate, 1-naphthyloxyethyl (meth) acrylate, 2-naphthyloxyethyl (meth) acrylate, phenoxypolyethylene glycol (meth) acrylate, nonylphenoxypolyethylene glycol (meth) acrylate, phenoxypolypropylene glycol (meth) acrylate, 2-hydroxy-3-phenoxypropyl (meth) acrylate, 2-hydroxy-3- (orthophenylphenoxy) propyl (meth) acrylate, 2-hydroxy-3- (1-naphthyloxy) propyl (meth) acrylate, benzyl (meth) acrylate, phenyl (meth) acrylate, o-biphenyl (meth) acrylate, 1-naphthyloxy) ethyl (meth) acrylate, phenoxyethyl (meth) acrylate, phenoxypolyethylene glycol (meth) acrylate, phenoxypolypropylene glycol (meth) acrylate, 2-hydroxy-3- (o-phenoxypropyl (meth) acrylate, and mixtures thereof, Aromatic (meth) acrylates such as 2-hydroxy-3- (2-naphthoxy) propyl (meth) acrylate; heterocyclic (meth) acrylates such as 2-tetrahydrofurfuryl (meth) acrylate, N- (meth) acryloyloxyethylhexahydrophthalimide, and 2- (meth) acryloyloxyethyl-N-carbazole, caprolactone-modified products thereof, omega-carboxy-polycaprolactone mono (meth) acrylate, glycidyl (meth) acrylate, alpha-ethylglycidyl (meth) acrylate, alpha-propylglycidyl (meth) acrylate, alpha-butylglycidyl (meth) acrylate, 2-methylglycidyl (meth) acrylate, 2-ethylglycidyl (meth) acrylate, 2-propylglycidyl (meth) acrylate, 3, 4-epoxybutyl (meth) acrylate, and mixtures thereof, Compounds having an ethylenically unsaturated group and an epoxy group such as 3, 4-epoxyheptyl (meth) acrylate, α -ethyl-6, 7-epoxyheptyl (meth) acrylate, 3, 4-epoxycyclohexylmethyl (meth) acrylate, o-vinylbenzyl glycidyl ether, m-vinylbenzyl glycidyl ether, p-vinylbenzyl glycidyl ether, and the like; compounds having an ethylenically unsaturated group and an oxetanyl group, such as (2-ethyl-2-oxetanyl) methyl (meth) acrylate, (2-methyl-2-oxetanyl) methyl (meth) acrylate, 2- (2-ethyl-2-oxetanyl) ethyl (meth) acrylate, 2- (2-methyl-2-oxetanyl) ethyl (meth) acrylate, 3- (2-ethyl-2-oxetanyl) propyl (meth) acrylate, and 3- (2-methyl-2-oxetanyl) propyl (meth) acrylate; compounds having an ethylenically unsaturated group and an isocyanate group such as 2- (meth) acryloyloxyethyl isocyanate; and compounds having an ethylenically unsaturated group and a hydroxyl group such as 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 3-chloro-2-hydroxypropyl (meth) acrylate, and 2-hydroxybutyl (meth) acrylate. These can be appropriately combined to obtain a desired (meth) acrylic resin.
The (meth) acrylic resin may have at least one functional group selected from a hydroxyl group, a glycidyl group (epoxy group), an amino group, and the like as a reaction site with a functional group-introducing compound or a crosslinking agent described later. Examples of the monomer for synthesizing the (meth) acrylic resin having a hydroxyl group include compounds having an ethylenically unsaturated group and a hydroxyl group, such as 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 3-chloro-2-hydroxypropyl (meth) acrylate, and 2-hydroxybutyl (meth) acrylate. These may be used alone or in combination of two or more.
Examples of monomers used for synthesizing a (meth) acrylic resin having a glycidyl group include glycidyl (meth) acrylate, α -ethyl glycidyl (meth) acrylate, α -propyl glycidyl (meth) acrylate, α -butyl glycidyl (meth) acrylate, 2-methyl glycidyl (meth) acrylate, 2-ethyl glycidyl (meth) acrylate, 2-propyl glycidyl (meth) acrylate, 3, 4-epoxybutyl (meth) acrylate, 3, 4-epoxyheptyl (meth) acrylate, α -ethyl-6, 7-epoxyheptyl (meth) acrylate, 3, 4-epoxycyclohexylmethyl (meth) acrylate, o-vinylbenzyl glycidyl ether, and mixtures thereof, And compounds having an ethylenically unsaturated group and an epoxy group such as m-vinylbenzyl glycidyl ether and p-vinylbenzyl glycidyl ether. These may be used alone or in combination of two or more.
The (meth) acrylic resin synthesized from these monomers contains a chain polymerizable functional group. The chain polymerizable functional group is, for example, at least one selected from the group consisting of an acryloyl group and a methacryloyl group. The chain polymerizable functional group can be introduced into the (meth) acrylic resin by, for example, reacting the (meth) acrylic resin having at least one functional group selected from a hydroxyl group, a glycidyl group (epoxy group), an amino group, and the like synthesized as described above with the following compound (functional group-introducing compound). Specific examples of the functional group-introducing compound include 2-methacryloyloxyethyl isocyanate, m-isopropenyl- α, α -dimethylbenzyl isocyanate, methacryloyl isocyanate, allyl isocyanate, 1- (bisacryloxymethyl) ethyl isocyanate; an acryloyl monoisocyanate compound obtained by the reaction of a diisocyanate compound or a polyisocyanate compound and hydroxyethyl (meth) acrylate or 4-hydroxybutyl (meth) acrylate; and acryloyl monoisocyanate compounds obtained by the reaction of diisocyanate compounds or polyisocyanate compounds, polyol compounds, hydroxyethyl (meth) acrylate, and the like. These may be used alone or in combination of two or more. Among these, the functional group-introducing compound may be 2-methacryloyloxyethyl isocyanate.
[ photopolymerization initiator ]
The photopolymerization initiator is not particularly limited as long as it is a photopolymerization initiator that generates active species capable of chain polymerization by irradiation with active energy rays. The active energy ray may be at least one selected from the group consisting of ultraviolet rays, electron beams, and visible light, and may be ultraviolet rays. Examples of the photopolymerization initiator include a photo radical polymerization initiator. Here, the chain polymerizable active species means that the polymerization reaction is started by reacting with a chain polymerizable functional group.
Examples of the photo radical polymerization initiator include benzoin ketals such as 2, 2-dimethoxy-1, 2-diphenylethan-1-one; α -hydroxyketones such as 1-hydroxycyclohexyl phenyl ketone, 2-hydroxy-2-methyl-1-phenyl propane-1-one, and 1- [4- (2-hydroxyethoxy) phenyl ] -2-hydroxy-2-methyl-1-propane-1-one; α -aminoketones such as 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) -butan-1-one and 1, 2-methyl-1- [4- (methylthio) phenyl ] -2-rt-enylpropan-1-one; oxime esters such as 1- [4- (phenylthio) phenyl ] -1, 2-octanedione-2- (benzoyl) oxime; phosphine oxides such as bis (2, 4, 6-trimethylbenzoyl) phenylphosphine oxide, bis (2, 6-dimethoxybenzoyl) -2, 4, 4-trimethylpentylphosphine oxide, and 2, 4, 6-trimethylbenzoyl diphenylphosphine oxide; 2, 4, 5-triarylimidazole dimers such as 2- (o-chlorophenyl) -4, 5-diphenylimidazole dimer, 2- (o-chlorophenyl) -4, 5-bis (methoxyphenyl) imidazole dimer, 2- (o-fluorophenyl) -4, 5-diphenylimidazole dimer, 2- (o-methoxyphenyl) -4, 5-diphenylimidazole dimer, and 2- (p-methoxyphenyl) -4, 5-diphenylimidazole dimer; benzophenone compounds such as benzophenone, N ' -tetramethyl-4, 4 ' -diaminobenzophenone, N ' -tetraethyl-4, 4 ' -diaminobenzophenone, and 4-methoxy-4 ' -dimethylaminobenzophenone; quinone compounds such as 2-ethylanthraquinone, phenanthrenequinone, 2-tert-butylanthraquinone, octamethylanthraquinone, 1, 2-benzoanthraquinone, 2, 3-benzoanthraquinone, 2-phenylanthraquinone, 2, 3-diphenylanthraquinone, 1-chloroanthraquinone, 2-methylanthraquinone, 1, 4-naphthoquinone, 9, 10-phenanthrenequinone, 2-methyl-1, 4-naphthoquinone, and 2, 3-dimethylanthraquinone; benzoin ethers such as benzoin methyl ether, benzoin ethyl ether, benzoin phenyl ether and the like; benzoin compounds such as benzoin, methyl benzoin, ethyl benzoin and the like; benzyl compounds such as benzyl dimethyl ketal; acridine compounds such as 9-phenylacridine and 1, 7-bis (9, 9' -acridinylheptane); n-phenylglycine, coumarin, and the like.
The content of the photopolymerization initiator in the active energy ray-curable pressure-sensitive adhesive may be 0.1 to 30 parts by mass, 0.3 to 10 parts by mass, or 0.5 to 5 parts by mass, relative to 100 parts by mass of the content of the (meth) acrylic resin. If the content of the photopolymerization initiator is 0.1 parts by mass or more, the pressure-sensitive adhesive layer is sufficiently cured after irradiation with active energy rays, and poor pickup tends to be less likely to occur. When the content of the photopolymerization initiator is 30 parts by mass or less, the adhesive layer tends to be prevented from being contaminated (the photopolymerization initiator is transferred to the adhesive layer).
[ crosslinking agent ]
The crosslinking agent is used, for example, for the purpose of controlling the elastic modulus and/or the tackiness of the pressure-sensitive adhesive layer. The crosslinking agent may be a compound having two or more functional groups in one molecule, which are reactive with at least one functional group selected from hydroxyl groups, glycidyl groups, amino groups, and the like, which the (meth) acrylic resin has. Examples of the bond formed by the reaction of the crosslinking agent and the (meth) acrylic resin include an ester bond, an ether bond, an amide bond, a urethane bond, and a urea bond.
In the present embodiment, the crosslinking agent may be, for example, a polyfunctional isocyanate having two or more isocyanate groups in one molecule. When such a polyfunctional isocyanate is used, it can easily react with a hydroxyl group, a glycidyl group, an amino group, and the like of the (meth) acrylic resin to form a strong crosslinked structure.
Examples of the polyfunctional isocyanate having two or more isocyanate groups in one molecule include isocyanate compounds such as 2, 4-tolylene diisocyanate, 2, 6-tolylene diisocyanate, 1, 3-xylylene diisocyanate, 1, 4-xylylene diisocyanate, diphenylmethane-4, 4 '-diisocyanate, diphenylmethane-2, 4' -diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane-4, 4 '-diisocyanate, dicyclohexylmethane-2, 4' -diisocyanate, lysine isocyanate, and the like.
The crosslinking agent may be a reaction product of a polyfunctional isocyanate and a polyol having two or more hydroxyl groups in one molecule (isocyanate group-containing oligomer). Examples of the polyhydric alcohol having two or more hydroxyl groups in one molecule include ethylene glycol, propylene glycol, butylene glycol, 1, 6-hexanediol, 1, 8-octanediol, 1, 9-nonanediol, 1, 10-decanediol, 1, 11-undecanediol, 1, 12-dodecanediol, glycerin, trimethylolpropane, pentaerythritol, dipentaerythritol, 1, 4-cyclohexanediol, 1, 3-cyclohexanediol, and the like.
Among these, the crosslinking agent may be a reaction product of a polyfunctional isocyanate having two or more isocyanate groups in one molecule and a polyol having three or more hydroxyl groups in one molecule (isocyanate group-containing oligomer). By forming a densely crosslinked structure of the pressure-sensitive adhesive layer 3 using such an isocyanate group-containing oligomer as a crosslinking agent, it tends to be possible to sufficiently suppress adhesion of the pressure-sensitive adhesive to the adhesive layer 5 in the pickup step.
The content of the crosslinking agent in the active energy ray-curable pressure-sensitive adhesive can be appropriately set according to the cohesive force, elongation at break, adhesion to the adhesive layer, and the like required for the pressure-sensitive adhesive layer. Specifically, the content of the crosslinking agent may be, for example, 3 to 30 parts by mass, 4 to 15 parts by mass, or 7 to 10 parts by mass with respect to 100 parts by mass of the content of the (meth) acrylic resin. By setting the content of the crosslinking agent to the above range, it is possible to achieve a good balance between the properties required for the pressure-sensitive adhesive layer in the dicing step and the properties required for the pressure-sensitive adhesive layer in the die bonding step, and also to achieve excellent pickup properties.
If the content of the crosslinking agent is 3 parts by mass or more per 100 parts by mass of the content of the (meth) acrylic resin, the formation of a crosslinked structure is not likely to be insufficient, and the interfacial adhesion force with the adhesive layer is sufficiently reduced in the pickup step, so that defects tend to be less likely to occur during pickup. On the other hand, if the content of the crosslinking agent is 30 parts by mass or less with respect to 100 parts by mass of the content of the (meth) acrylic resin, the pressure-sensitive adhesive layer tends not to be too hard, and the core tends not to be easily peeled off in the expanding step.
The content of the crosslinking agent may be, for example, 0.1 to 15% by mass, 3 to 15% by mass or 5 to 15% by mass based on the total mass of the active energy ray-curable pressure-sensitive adhesive. Since the content of the crosslinking agent is 0.1% by mass or more, a region (the 1 st region 3a) where the adhesive strength is appropriately decreased by irradiation with the active energy ray is easily formed, and on the other hand, since the content of the crosslinking agent is 15% by mass or less, excellent pickup properties tend to be easily realized.
The thickness of the pressure-sensitive adhesive layer 3 may be appropriately set depending on the conditions (temperature, tension, etc.) of the expansion step, and may be, for example, 1 to 200 μm, 5 to 50 μm, or 10 to 20 μm. If the thickness of the pressure-sensitive adhesive layer 3 is 1 μm or more, the adhesive property tends not to become insufficient, and if it is 200 μm or less, the slit width tends to become wide when expanded (stress is not relieved when pushing on a pin), and pickup tends not to become insufficient.
The pressure-sensitive adhesive layer 3 is formed on the base material layer 1. As a method of forming the pressure-sensitive adhesive layer 3, a known method can be employed. For example, a laminate of the base layer 1 and the pressure-sensitive adhesive layer 3 may be formed by a two-layer coextrusion method, or a varnish of an active energy ray-curable pressure-sensitive adhesive (varnish for forming a pressure-sensitive adhesive layer) may be prepared, applied to the surface of the base layer 1, or the pressure-sensitive adhesive layer 3 may be formed on a film subjected to a mold release treatment, and transferred to the base layer 1.
The varnish of the active energy ray-curable pressure-sensitive adhesive (varnish for forming a pressure-sensitive adhesive layer) is an organic solvent in which a (meth) acrylic resin, a photopolymerization initiator, and a crosslinking agent are soluble, and can be volatilized by heating. Specific examples of the organic solvent include aromatic hydrocarbons such as toluene, xylene, mesitylene, cumene and p-cymene; cyclic ethers such as tetrahydrofuran and 1, 4-dioxane; alcohols such as methanol, ethanol, isopropanol, butanol, ethylene glycol, and propylene glycol; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, and 4-hydroxy-4-methyl-2-pentanone; esters such as methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, γ -butyrolactone, and the like; carbonates such as ethylene carbonate and propylene carbonate; polyhydric alcohol alkyl ethers such as ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol dimethyl ether, propylene glycol diethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, diethylene glycol dimethyl ether, and diethylene glycol diethyl ether; polyhydric alcohol alkyl ether acetates such as ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether acetate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, diethylene glycol monomethyl ether acetate, and diethylene glycol monoethyl ether acetate; amides such as N, N-dimethylformamide, N-dimethylacetamide and N-methyl-2-pyrrolidone. These organic solvents may be used alone or in combination of two or more.
Among these, from the viewpoint of solubility and boiling point, the organic solvent may be at least one selected from the group consisting of toluene, methanol, ethanol, isopropanol, acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, methyl acetate, ethyl acetate, butyl acetate, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, diethylene glycol dimethyl ether, ethylene glycol monomethyl ether acetate, propylene glycol monomethyl ether acetate, and N, N-dimethylacetamide, for example. The solid content concentration of the varnish is usually 10 to 60 mass%.
(substrate layer)
The base material layer 1 may be a known polymer sheet or film, and is not particularly limited as long as the stretching step can be performed under low temperature conditions. Specific examples of the substrate layer 1 include crystalline polypropylene, amorphous polypropylene, high-density polyethylene, medium-density polyethylene, low-density polyethylene, ultra-low-density polyethylene, low-density linear polyethylene, polyolefin such as polybutene or polymethylpentene, ethylene-vinyl acetate copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylate (random, alternating) copolymer, ethylene-butene copolymer, ethylene-hexene copolymer, polyurethane, polyester such as polyethylene terephthalate or polyethylene naphthalate, polycarbonate, polyimide, polyether ether ketone, polyimide, polyetherimide, polyamide, wholly aromatic polyamide, polyphenylene sulfide, aromatic polyamide (paper), glass cloth, fluororesin, polyethylene terephthalate, polyethylene naphthalate, etc., glass, polyethylene terephthalate, etc, Polyvinyl chloride, polyvinylidene chloride, cellulose resin, silicone resin, a mixture of these with a plasticizer, or a cured product crosslinked by electron beam irradiation.
The base layer 1 has a surface containing at least one resin selected from the group consisting of polyethylene, polypropylene, polyethylene-polypropylene random copolymer, and polyethylene-polypropylene block copolymer as a main component, and may be a layer in which the surface is in contact with the pressure-sensitive adhesive layer 3. These resins can also be used as a good base material from the viewpoints of characteristics such as Young's modulus, stress relaxation properties, and melting point, cost, and scrap recycling after use. The substrate layer 1 may be a single layer, and may have a multilayer structure in which layers made of different materials are stacked as necessary. From the viewpoint of controlling adhesion to the pressure-sensitive adhesive layer 3, the surface of the base material layer 1 may be subjected to surface roughening treatment such as matting treatment or corona treatment.
(adhesive layer)
An adhesive composition constituting a known die bond film can be applied to the adhesive layer 5. Specifically, the adhesive composition constituting the adhesive layer 5 may include a (meth) acrylic copolymer containing a reactive group, a curing accelerator, and a filler. According to the adhesive layer 5 containing these ingredients, the following characteristics tend to be exhibited: the die-to-substrate and the die-to-die bonding are excellent in adhesion, and also can impart electrode embeddability, wire embeddability, and the like, and can perform bonding at a low temperature in a die bonding process, obtain excellent curing in a short time, and have excellent reliability after molding with a sealant, and the like.
The reactive group-containing (meth) acrylic copolymer may be, for example, an epoxy group-containing (meth) acrylic copolymer. The epoxy group-containing (meth) acrylic copolymer can be obtained by using glycidyl (meth) acrylate in an amount of 0.5 to 6% by mass based on the obtained copolymer as a raw material. When the content of the glycidyl (meth) acrylate is 0.5% by mass or more, high adhesive force is easily obtained, while gelation tends to be suppressed by setting the content to 6% by mass or less. The monomer constituting the remainder of the reactive group-containing (meth) acrylic copolymer may be, for example, an alkyl (meth) acrylate having an alkyl group having 1 to 8 carbon atoms such as methyl (meth) acrylate, styrene, acrylonitrile, or the like. Among these, the monomer constituting the residual part of the reactive group-containing (meth) acrylic copolymer may be ethyl (meth) acrylate and/or butyl (meth) acrylate. The mixing ratio can be adjusted in consideration of Tg of the (meth) acrylic copolymer containing a reactive group. When Tg is-10 ℃ or higher, the tackiness of the adhesive layer 5 in the B-stage state tends to be suppressed from becoming excessively large, and the workability tends to be excellent. The glass transition point (Tg) of the epoxy group-containing (meth) acrylic copolymer may be, for example, 30 ℃. The polymerization method is not particularly limited, and examples thereof include bead polymerization and solution polymerization. Examples of commercially available epoxy group-containing (meth) acrylic copolymers include HTR-860P-3 (trade name, manufactured by Nagase ChemteX corporation).
The weight average molecular weight of the epoxy group-containing (meth) acrylic copolymer may be 10 ten thousand or more, or 30 to 300 ten thousand or 50 to 200 ten thousand from the viewpoint of adhesiveness and heat resistance. If the weight average molecular weight is 300 ten thousand or less, the filling property between the chip and the substrate supporting the chip can be suppressed from decreasing. The weight average molecular weight is a polystyrene conversion value by Gel Permeation Chromatography (GPC) using a calibration curve of standard polystyrene.
Examples of the curing accelerator include tertiary amines, imidazoles, and quaternary ammonium salts. Specific examples of the curing accelerator include 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and 1-cyanoethyl-2-phenylimidazolium trimellitate. These may be used alone or in combination of two or more.
The filler may be an inorganic filler. Specific examples of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica, and amorphous silica. These may be used alone or in combination of two or more.
The adhesive composition may further include an epoxy resin and an epoxy resin curing agent. Examples of the epoxy resin include bisphenol a type epoxy resins, bisphenol F type epoxy resins, bisphenol S type epoxy resins, alicyclic epoxy resins, aliphatic chain epoxy resins, phenol novolac type epoxy resins, cresol novolac type epoxy resins, bisphenol a novolac type epoxy resins, diglycidyl etherate of biphenol, diglycidyl etherate of naphthalene diol, diglycidyl etherate of phenols, diglycidyl etherate of alcohols, and bifunctional epoxy resins such as alkyl substituents, halides, and hydrides thereof, and novolac type epoxy resins. Further, other epoxy resins generally known such as a polyfunctional epoxy resin and a heterocyclic ring-containing epoxy resin can be used. These can be used alone or in combination of two or more. In addition, components other than the epoxy resin may be contained as impurities within a range not to impair the characteristics.
Examples of the epoxy resin curing agent include phenol resins obtained by reacting a phenol compound with a xylylene compound as a 2-valent linking group in the absence of a catalyst or an acid catalyst. Examples of the phenol compound used for producing the phenol resin include phenol, o-cresol, m-cresol, p-cresol, o-ethylphenol, p-ethylphenol, o-n-propylphenol, m-n-propylphenol, p-n-propylphenol, o-isopropylphenol, m-isopropylphenol, p-isopropylphenol, o-n-butylphenol, m-n-butylphenol, p-n-butylphenol, o-isobutylphenol, m-isobutylphenol, p-isobutylphenol, octylphenol, nonylphenol, 2, 4-xylenol, 2, 6-xylenol, 3, 5-xylenol, 2, 4, 6-trimethylphenol, resorcinol, catechol, hydroquinone, 4-methoxyphenol, catechol, m-phenylphenol, p-cyclohexylphenol, o-allylphenol, p-allylphenol, o-benzylphenol, o-ethylphenol, p-ethylphenol, o-n-propylphenol, m-n-isopropylphenol, p-isopropylphenol, o-n-butylphenol, p-isobutylphenol, p-butylphenol, p-butylphen, P-benzylphenol, o-chlorophenol, p-chlorophenol, o-bromophenol, p-bromophenol, o-iodophenol, p-iodophenol, o-fluorophenol, m-fluorophenol, p-fluorophenol, and the like. These phenol compounds may be used alone or in combination of two or more. As the 2-valent linking group, that is, a xylylene compound used for producing a phenol resin, a xylylene dihalide, xylylene diglycol, and a derivative thereof shown below can be used. That is, specific examples of the xylylene compound include α, α '-dichloro-p-xylene, α' -dichloro-m-xylene, α '-dichloro-o-xylene, α' -dibromo-p-xylene, α '-dibromo-m-xylene, α' -dibromo-o-xylene, α '-diiodo-p-xylene, α' -diiodo-m-xylene, α '-diiodo-o-xylene, α' -dihydroxy-p-xylene, α '-dihydroxy-m-xylene, α' -dihydroxy-o-xylene, α '-dimethoxy-p-xylene, α' -dimethoxy-m-xylene, and the like, α, α ' -dimethoxy-o-xylene, α ' -diethoxy-p-xylene, α ' -diethoxy-m-xylene, α ' -diethoxy-o-xylene, α ' -di-n-propoxy-p-xylene, α ' -di-n-propoxy-m-xylene, α ' -di-n-propoxy-o-xylene, α ' -diisopropoxy-p-xylene, α ' -diisopropoxy-m-xylene, α ' -diisopropoxy-o-xylene, α ' -di-n-butoxy-p-xylene, α ' -di-n-butoxy-m-xylene, α ' -di-n-butoxy-o-xylene, α, α '-diisobutyoxy-p-xylene, α' -diisobutyoxy-m-xylene, α '-diisobutyoxy-o-xylene, α' -di-t-butoxy-p-xylene, α '-di-t-butoxy-m-xylene, α' -di-t-butoxy-o-xylene, and the like. These may be used alone or in combination of two or more.
When reacting a phenol compound with a xylylene compound, mineral acids such as hydrochloric acid, sulfuric acid, phosphoric acid, and polyphosphoric acid are used; organic carboxylic acids such as dimethyl sulfuric acid, diethyl sulfuric acid, p-toluenesulfonic acid, methanesulfonic acid, ethanesulfonic acid, and the like; super strong acids such as trifluoromethanesulfonic acid; strong acidic ion exchange resins such as alkane sulfonic acid type ion exchange resins; super strong acid ion exchange resins such as perfluoroalkane sulfonic acid type ion exchange resins (trade names: Nafion, manufactured by DuPont, Nafion (r)), which are registered trademarks; natural and synthetic zeolites; an acid catalyst such as activated clay (acid clay) is reacted at 50 to 250 ℃ until a xylylene compound as a raw material is substantially eliminated and the reaction composition is constant, thereby obtaining a phenol resin. The reaction time can be appropriately set according to the raw material and the reaction temperature, and can be set to, for example, about 1 hour to 15 hours, and can be determined while following the reaction composition by GPC (gel permeation chromatography) or the like.
The thickness of the adhesive layer 5 is, for example, 1 to 300 μm, 5 to 150 μm, or 10 to 100 μm. When the thickness of the adhesive layer 5 is 1 μm or more, the adhesiveness tends to be more excellent, and on the other hand, when it is 300 μm or less, the separability and the pickup property at the time of expansion tend to be more excellent.
< method for producing dicing die-bonding integral film >
The method for producing the film 10 includes, in order: a step of producing a laminate comprising a pressure-sensitive adhesive layer composed of an active energy ray-curable pressure-sensitive adhesive whose adhesive strength decreases by irradiation with an active energy ray and an adhesive layer 5 formed on the surface of the pressure-sensitive adhesive layer, on the surface of the base material layer 1; and irradiating the region to be the 1 st region 3a of the pressure-sensitive adhesive layer included in the laminate with active energy raysAnd (5) working procedures. The irradiation amount of the active energy ray to the region to be the 1 st region 3a is, for example, 10 to 1000mJ/cm2，100～700mJ/cm2Or 200 to 500mJ/cm2And (4) finishing. The manufacturing method is a method of first manufacturing a laminate of the pressure-sensitive adhesive layer and the adhesive layer 5, and then irradiating a specific region of the pressure-sensitive adhesive layer with active energy rays.
< semiconductor device and method for manufacturing the same >
Fig. 4 is a cross-sectional view schematically showing the semiconductor device according to the present embodiment. The semiconductor device 100 shown in the figure includes a substrate 70; four chips S1, S2, S3, S4 stacked on the surface of the substrate 70; wires W1, W2, W3, W4 that electrically connect electrodes (not shown) on the surface of the substrate 70 and the four chips S1, S2, S3, S4; and a sealing layer 50 for sealing these.
The substrate 70 may be, for example, an organic substrate or a metal substrate such as a lead frame. The thickness of the substrate 70 may be, for example, 70 to 140 μm or 80 to 100 μm from the viewpoint of suppressing warpage of the semiconductor device 100.
The four chips S1, S2, S3, and S4 are laminated via the cured product 5C of the adhesive sheet 5P. The chips S1, S2, S3, and S4 in the plan view are, for example, square or rectangular in shape. The chips S1, S2, S3 and S4 have an area of 0.1-9 mm2，0.1～4mm2Or 0.1 to 2mm2And (4) finishing. The length of one side of the chips S1, S2, S3 and S4 may be, for example, 0.1 to 3mm, 0.1 to 2mm or 0.1 to 1 mm. The thickness of the chips S1, S2, S3 and S4 may be, for example, 10 to 170 μm or 25 to 100 μm. The four chips S1, S2, S3, and S4 may have the same length on one side or may have different thicknesses on the other side.
The method for manufacturing the semiconductor device 100 includes: a step of preparing the film 10; attaching the wafer W to the adhesive layer 5 of the film 10, and attaching the dicing ring DR to the 2 nd surface F2 of the pressure-sensitive adhesive layer 3; a step (dicing step) of singulating the wafer W into a plurality of chips S; a step of picking up DAF8 (a laminated body of a die S1 and an adhesive sheet 5P, refer to fig. 5(d)) from the 1 st region 3a of the pressure-sensitive adhesive layer 3; and a step of mounting the chip S1 on the substrate 70 via the adhesive sheet 5P.
An example of the method for producing the DAF8 will be described with reference to fig. 5(a), 5(b), 5(c), and 5 (d). First, the film 10 is prepared. As shown in fig. 5(a) and 5(b), the film 10 is attached so that the adhesive layer 5 is in contact with one surface of the wafer W. The dicing ring DR is attached to the 2 nd surface F2 of the pressure-sensitive adhesive layer 3.
And carrying out crystal cutting on the wafer W, the adhesive layer 5 and the pressure-sensitive adhesive layer 3. As a result, as shown in fig. 5(c), the wafer W is singulated into chips S. The adhesive layer 5 is also formed into an adhesive sheet 5P by singulation. Examples of the dicing method include a method using a dicing blade or a laser. In addition, the wafer W may be polished to form a film before dicing.
After the dicing, the pressure-sensitive adhesive layer 3 is not irradiated with active energy rays, as shown in fig. 5(d), under normal temperature or cooling conditions, the chips S are separated from each other by expanding the base layer 1, while the adhesive sheet 5P is peeled off from the pressure-sensitive adhesive layer 3 by pushing up with the pins 42, and the DAF8 is sucked and picked up with the suction chuck 44.
A method for manufacturing the semiconductor device 100 will be specifically described with reference to fig. 6, 7, and 8. First, as shown in fig. 6, the first-stage chip S1 (chip S) is pressure-bonded to a predetermined position of the substrate 70 via the adhesive sheet 5P. Next, the adhesive sheet 5P is cured by heating. Thereby, the adhesive sheet 5P is cured to become a cured product 5C. From the viewpoint of reducing voids, the curing treatment of the adhesive sheet 5P may be performed in a pressurized environment.
The second-stage chip S2 is mounted on the surface of the chip S1 in the same manner as the chip S1 is mounted on the substrate 70. The third and fourth stage chips S3 and S4 are mounted to produce the structure 60 shown in fig. 7. After the chips S1, S2, S3, S4 and the substrate 70 are electrically connected by the wires W1, W2, W3, and W4 (see fig. 8), the semiconductor elements and the wires are sealed by the sealant 50, whereby the semiconductor device 100 shown in fig. 4 is completed.
Although the embodiments of the present invention have been described in detail above, the present invention is not limited to the embodiments. For example, although the film 10 including the base layer 1, the pressure-sensitive adhesive layer 3, and the adhesive layer 5 in this order is illustrated in the above embodiment, the adhesive layer 5 may not be included. The film 10 may further include a cover film (not shown) covering the adhesive layer 5.
Examples
The present invention will be described more specifically with reference to examples, but the present invention is not limited to these examples. In addition, unless otherwise indicated, all chemicals were used with the reagents.
< production example 1>
[ Synthesis of acrylic resin (A-1) ]
A2000 mL flask with a three-in-one motor, stirring blade, and nitrogen inlet was charged with the following ingredients.
Ethyl acetate (solvent): 635 parts by mass
2-ethylhexyl acrylate: 395 parts by mass
2-hydroxyethyl acrylate: 100 parts by mass
Methacrylic acid: 5 parts by mass of
Azobisisobutyronitrile: 0.08 parts by mass
After the contents were stirred until they became sufficiently uniform, bubbling was performed at a flow rate of 500 mL/min for 60 minutes to degas the dissolved oxygen in the system. The temperature was raised to 78 ℃ over 1 hour, and polymerization was carried out for 6 hours after the temperature was raised. Next, the reaction solution was transferred to a 2000mL autoclave equipped with a three-in-one motor, a stirring blade, and a nitrogen gas inlet tube, heated at 120 ℃ and 0.28MPa for 4.5 hours, and then cooled to room temperature (25 ℃ C., the same applies hereinafter).
Next, 490 parts by mass of ethyl acetate was added thereto and stirred to dilute the contents. To this, 0.10 parts by mass of dioctyltin dilaurate as a urethane formation catalyst was added, 48.6 parts by mass of 2-methacryloyloxyethyl isocyanate (product name of Karenz MOI, manufactured by SHOWA DENKO K.K.) was added, and the mixture was reacted at 70 ℃ for 6 hours, followed by cooling to room temperature. Subsequently, ethyl acetate was further added to adjust the nonvolatile content of the acrylic resin solution to 35 mass%, thereby obtaining a solution containing the acrylic resin (a-1) having a chain-polymerizable functional group of production example 1.
The solution containing the acrylic resin (A-1) obtained as described above was dried under vacuum at 60 ℃ overnight. The solid content thus obtained was subjected to elemental analysis by a fully automatic elemental analyzer (product name: vario EL, manufactured by Elementar Analyzeme GmbH., Ltd.), and the content of the functional group derived from the introduced 2-methacryloyloxyethyl isocyanate was calculated from the nitrogen content and found to be 0.50 mmol/g.
The weight average molecular weight of the acrylic resin (A-1) was determined in terms of polystyrene using the following apparatus. That is, GPC measurement was performed using SD-8022/DP-8020/RI-8020 manufactured by Tosoh Corporation, and Gelpack GL-A150-S/GL-A160-S manufactured by Hitachi Chemical Co., Ltd. as a column, and tetrahydrofuran as an eluent. As a result, the weight average molecular weight in terms of polystyrene was 80 ten thousand. The hydroxyl value and acid value were 56.1mgKOH/g and 6.5mgKOH/g, respectively, as measured according to the method described in JIS K0070. These results are summarized in table 1.
< production example 2>
[ Synthesis of acrylic resin (A-2) ]
A solution containing the acrylic resin (a-2) of production example 2 was obtained in the same manner as in production example 1, except that the raw material monomer composition shown in production example 1 of table 1 was changed to the raw material monomer composition shown in production example 2 of table 1. The measurement results of the properties of the acrylic resin (A-2) of production example 2 are shown in Table 1.
< production example 3>
[ Synthesis of acrylic resin (A-3) ]
A solution containing the acrylic resin (a-3) of production example 3 was obtained in the same manner as in production example 1, except that the raw material monomer composition shown in production example 1 of table 1 was changed to the raw material monomer composition shown in production example 3 of table 1. The measurement results of the properties of the acrylic resin (A-3) of production example 3 are shown in Table 1.
[ Table 1]
Figure BDA0003629003810000221
< example 1>
[ production of dicing film (pressure-sensitive adhesive layer) ]
A varnish of an active energy ray-curable pressure-sensitive adhesive (varnish for pressure-sensitive adhesive layer formation) was prepared by mixing the following ingredients (see table 2). The amount of ethyl acetate (solvent) was adjusted so that the total solid content of the varnish became 25 mass%.
Solution containing the acrylic resin (a-1) of production example 1: 100 parts by mass (solid content)
Photopolymerization initiator (B-1) (1-hydroxycyclohexyl phenyl ketone (Irgacure 184, product of Ciba Japan K.K.; "Irgacure" is a registered trademark): 1.0 part by mass
Crosslinker (C-1) (polyfunctional isocyanate (reactant of toluene diisocyanate and trimethylolpropane), Nippon Polyurethane Industry Co., Ltd., CorONATE L, solids content: 75%): 8.0 parts by mass (solid content)
Ethyl acetate (solvent)
A polyethylene terephthalate film (width 450mm, length 500mm, thickness 38 μm) was prepared, one of the surfaces of which was subjected to a mold release treatment. The surface subjected to the release treatment was coated with a varnish of an active energy ray-curable pressure-sensitive adhesive using an applicator, and then dried at 80 ℃ for 5 minutes. Thus, a laminate (die-cut film) composed of a polyethylene terephthalate film and a pressure-sensitive adhesive layer having a thickness of 30 μm formed thereon was obtained.
A polyolefin film (width 450mm, length 500mm, thickness 80 μm) was prepared, one of the surfaces of which was subjected to corona treatment. The corona-treated surface and the pressure-sensitive adhesive layer of the laminate were bonded at room temperature. Next, the pressure-sensitive adhesive layer was transferred to a polyolefin film (coverlay film) by pressing with a rubber roller. Thereafter, the resultant was left at room temperature for 3 days to obtain a film-coated sliced crystal film.
[ production of die bond film (adhesive layer) ]
The following components were mixed to prepare a varnish for forming an adhesive layer. First, cyclohexanone (solvent) was added to a mixture containing the following components, followed by stirring and mixing, and then, the mixture was further kneaded for 90 minutes using a bead mill.
Epoxy resin (YDCN-700-10 (trade name), NIPPON STEEL Chemical & Material Co., Ltd., cresol novolac type epoxy resin, epoxy equivalent: 210, molecular weight: 1200, softening point: 80 ℃ C.): 14 parts by mass
Phenol resin (MILEX XLC-LL (trade name), manufactured by Mitsui Chemicals, Inc., phenol resin, hydroxyl group equivalent: 175, water absorption: 1.8%, heating weight loss at 350 ℃ 4%): 23 parts by mass
Silane coupling agent (NUC a-189 (trade name) NUC co., ltd., manufactured by r. -mercaptopropyltrimethoxysilane): 0.2 part by mass
Silane coupling agent (NUCA-1160 (trade name), NUC co., ltd., manufactured, gamma-ureidopropyltriethoxysilane): 0.1 part by mass
Filler (SC2050-HLG (trade name), manufactured by Admatechs corporation, silica, average particle diameter 0.500. mu.m): 32 parts by mass
After the following components were further added to the mixture obtained as described above, the mixture was stirred, mixed and vacuum degassed to obtain an adhesive layer-forming varnish (an adhesive composition varnish containing at least a reactive group-containing (meth) acrylic copolymer, a curing accelerator and a filler).
An epoxy group-containing acrylic copolymer (HTR-860P-3 (trade name), manufactured by Nagase ChemteX corporation, weight-average molecular weight: 80 ten thousand): 16 parts by mass
0.1 part by mass of a curing accelerator (Curezol 2PZ-CN (trade name), Shikoku Chemicals corporation, 1-cyanoethyl-2-phenylimidazole, Curezol is a registered trademark)
A polyethylene terephthalate film (thickness: 35 μm) was prepared, one of the surfaces of which was subjected to a mold release treatment. The surface subjected to the release treatment was coated with an adhesive layer-forming varnish using an applicator, and then dried by heating at 140 ℃ for 5 minutes. Thus, a laminate (die bond film) composed of a polyethylene terephthalate film (carrier film) and an adhesive layer (B-stage state) having a thickness of 25 μm formed thereon was obtained.
[ production of dicing die-bonding Integrated film ]
The die-bonding film composed of the adhesive layer and the carrier film was cut into a circular shape having a diameter of 335mm together with the carrier film. The dicing film from which the polyethylene terephthalate film was peeled was attached to the diced die-bonding film at room temperature, and then left to stand at room temperature for 1 day. Thereafter, the sliced film was cut into a circular shape having a diameter of 370mm to obtain a laminate. The region of the laminate thus obtained (region 1 of the pressure-sensitive adhesive layer) corresponding to the position of attachment of the wafer in the adhesive layer was irradiated with ultraviolet rays as follows. That is, a pulsed xenon lamp was used at 70W and 300mJ/cm2The irradiation amount of (2) is locally irradiated with ultraviolet rays. Further, a portion from the center of the film to an inner diameter of 318mm was irradiated with ultraviolet rays using a light shielding curtain. Thus, a plurality of dicing die-bonding integral films of example 1 were obtained for various evaluation tests described later.
< example 2>
Except that the ultraviolet irradiation amount is from 300mJ/cm2Changed to 200mJ/cm2Except that, a plurality of cut die-bonded integral type films of example 2 were obtained in the same manner as in example 1.
< example 3>
Except that the ultraviolet irradiation amount is from 300mJ/cm2Changed to 500mJ/cm2Except that, a plurality of cut die-bonded integral type films of example 3 were obtained in the same manner as in example 1.
< example 4>
A plurality of cut, die-bonded, monolithic films of example 4 were obtained in the same manner as in example 1, except that the photopolymerization initiator (B-1) used in the production of the cut crystalline film was changed to a photopolymerization initiator (B-2) (2-hydroxy-1- {4- [4- (2-hydroxy-2-methyl-propionyl) -benzyl ] -phenyl } -2-methyl-propan-1-one, Ciba Japan k.k. system, Irgacure127, and Irgacure are registered trademarks)).
< example 5>
A plurality of dicing die-bonding integral films of example 5 were obtained in the same manner as in example 3, except that the acrylic resin (a-1) used in the production of the dicing film was changed to the acrylic resin (a-2).
< comparative example 1>
A plurality of dicing die-bonded integral films of comparative example 1 were obtained in the same manner as in example 1, except that the acrylic resin (a-1) used in the production of the dicing film was changed to the acrylic resin (a-3).
[ evaluation test ]
(1) Measurement of adhesive force (peel strength at 30 ℃) of pressure-sensitive adhesive layer to adhesive layer
The adhesive force of the 1 st region of the pressure-sensitive adhesive layer to the adhesive layer (f1) and the adhesive force of the 2 nd region of the pressure-sensitive adhesive layer to the adhesive layer (f2) were evaluated by measuring the peel strength at 30 °. In addition, f1 corresponds to the adhesive bonding force of the 1 st region of the pressure-sensitive adhesive layer to the adhesive layer after irradiation with ultraviolet rays, and f2 corresponds to the adhesive bonding force of the region of the pressure-sensitive adhesive layer to become the 1 st region before irradiation with ultraviolet rays to the adhesive layer. Therefore, f1 used the dicing die-bonding integral film after irradiation with ultraviolet light in [ preparation of dicing die-bonding integral film ], and f2 used the laminate before irradiation with ultraviolet light to measure the adhesive force (peel strength at 30 °). The measurement sample was obtained by preparing a dicing die-bonding integral film and a laminate, and cutting them into a width of 25mm and a length of 100mm, respectively. The peel strength of the 1 st region of the pressure-sensitive adhesive layer after irradiation with ultraviolet light from the adhesive layer and the peel strength of the region of the pressure-sensitive adhesive layer before irradiation with ultraviolet light to the adhesive layer (the peel strength of the 2 nd region of the pressure-sensitive adhesive layer from the adhesive layer) were measured for each measurement sample using a tensile tester (Autograph "AGS-1000", manufactured by SHIMADZU CORPORATION). The measurement conditions were a peel angle of 30 ℃ and a peel speed of 60 mm/min. The storage of the sample and the measurement of the peel strength were carried out at a temperature of 23 ℃ and a relative humidity of 40%. The results are shown in table 2.
(2) Determination of adhesive force (90 DEG peel strength) of pressure-sensitive adhesive layer to stainless Steel substrate
The adhesive bond of the 2 nd region of the pressure-sensitive adhesive layer to the stainless substrate was evaluated by measuring the 90 ° peel strength. In addition, the adhesive bonding force corresponds to the adhesive bonding force of the pressure-sensitive adhesive layer to the stainless substrate before irradiation of ultraviolet rays. Therefore, the adhesive force was measured using the laminate before irradiation with ultraviolet light in [ production of dicing die-bonding integrated film ] (90 ° peel strength). A laminate was prepared, cut out to have a width of 25mm and a length of 100mm, and the surface on the pressure-sensitive adhesive layer side was attached to a stainless substrate (SUS430BA), thereby obtaining a measurement sample. The peel strength of the pressure-sensitive adhesive layer to the stainless substrate was measured from the measurement sample using a tensile tester (Autograph "AGS-1000", manufactured by SHIMADZU CORPORATION). The measurement conditions were a peel angle of 90 ℃ and a peel speed of 50 mm/min. The results are shown in table 2.
(3) Measurement of curing shrinkage of pressure-sensitive adhesive layer
Two polyethylene terephthalate films (width 450mm, length 500mm, thickness 38 μm) were prepared, one of the surfaces of which was subjected to a mold release treatment. The surface of one polyethylene terephthalate film subjected to the release treatment was coated with an active energy ray-curable pressure-sensitive adhesive varnish using an applicator, and then dried at 80 ℃ for 5 minutes to form a pressure-sensitive adhesive layer. Next, the surface of the other polyethylene terephthalate film subjected to the release treatment and the pressure-sensitive adhesive layer were bonded at room temperature, and pressed by a rubber roller to obtain a laminate composed of a polyethylene terephthalate film, a pressure-sensitive adhesive layer having a thickness of 30 μm, and a polyethylene terephthalate film. A plurality of such laminates were produced. Next, the polyethylene terephthalate films of the laminate were peeled off on one side, and the pressure-sensitive adhesive layers were laminated so as not to enter into the gaps between the pressure-sensitive adhesive layers, and the pressure-sensitive adhesive layers were repeatedly laminated using other laminates until the thickness of the pressure-sensitive adhesive layer became about 1mm, thereby obtaining a laminate composed of two polyethylene terephthalate films and a pressure-sensitive adhesive layer having a thickness of about 1mm sandwiched between these.
Stamping the obtained laminated body into
Figure BDA0003629003810000261
And the polyethylene terephthalate film is stripped on both sides and is configured on the glass slide so as to prevent the pores from entering. Then, aluminum foil having black on one side is similarly punched out
Figure BDA0003629003810000262
And a sample was obtained by disposing on the upper surface of the pressure-sensitive adhesive layer on the side opposite to the slide glass. For the obtained sample, production of a film integrated with [ dicing die bonding ]]The ultraviolet irradiation was performed under the same conditions, and the curing shrinkage was measured from the difference in thickness between the glass slide and the aluminum foil before and after the removal of the ultraviolet irradiation by using a resin curing shrinkage measuring apparatus (Currodge Corporation). The results are shown in table 2.
(4) Determination of chip edge peel Strength
The edge peel strength was measured by the following procedure. Fig. 9(a), 9(b), and 9(c) are cross-sectional views schematically showing a step of measuring the edge peel strength.
A step of attaching a silicon wafer Ws having a thickness of 50 μm to the adhesive layer 5 and attaching the dicing ring DR to the 2 nd surface F2 of the pressure-sensitive adhesive layer 3 (see fig. 9(a))
Step of singulating silicon wafer Ws and adhesive layer 5 into a plurality of adhesive sheet-attached chips Ta (a laminate of chip Ts and adhesive sheet 5 p) (see fig. 9(b))
A step of pushing the center portion of the adhesive sheet-attached chip Ta from the base layer 1 side at a speed of 60 mm/min at a temperature of 23 ℃ (see fig. 9(c)), and measuring the edge peel strength when peeling the edge of the adhesive sheet-attached chip Ta from the pressure-sensitive adhesive layer 3
First, a dicing die-bonding integral film was attached to a silicon wafer (diameter: 12 inches, thickness: 50 μm) and a dicing ring under the following conditions (see fig. 9 (a)). The elongation in the MD direction of the dicing die-bonding integrated film after the silicon wafer and the dicing ring are attached is about 1.0 to 1.3%.
< attachment conditions >
The attaching device: DFM2800 (manufactured by DISCO Corporation)
The attachment temperature: 70 deg.C
Sticking speed: 10mm/s
Adhesion rating: grade 6
Next, the silicon wafer with the dicing die-bonding integral film was singulated by blade dicing into a plurality of adhesive sheet-attached chips (2 mm × 2mm in size) (see fig. 9 (b)).
< Crystal cutting Condition >
A crystal cutter: DFD6361 (manufactured by DISCO Corporation)
Blade: ZH05-SD4000-N1-70-BB (manufactured by DISCO Corporation)
Blade rotation speed: 40000rpm
Crystal cutting speed: 30 mm/sec
Blade height: 90 μm
A groove depth from the surface of the pressure-sensitive adhesive layer to the base material layer: 20 μm
Amount of water at the time of slicing
A blade cooler: 1.5L/min
Spraying: 1.0L/min
Spraying: 1.0L/min
After 1 day after dicing, the adhesive sheet-attached chip was pushed in from the base layer side with a push-in jig P under the following measurement conditions, and the peel strength of the adhesive sheet-attached chip edge was measured (see fig. 9 (c)). Fig. 10 is a graph showing an example of the relationship between the displacement (mm) and the thrust (N) due to the pushing-in. When the chip edge peels off, as shown in fig. 10, the thrust temporarily drops, and a change point appears on the graph. The thrust value at the point of change is defined as the edge peel strength. Before the measurement, the surface of the base material layer corresponding to the central portion of the chip was marked with an oil pen. Fig. 11 is a plan view schematically showing a state in which a mark is attached to a position corresponding to the central portion of the chip to be measured. The mark M of the central portion of the chip was measured and determined with a ruler. The measurement was performed when N is 10. After the measurement was performed on one chip, the next measurement was performed at intervals of 3 chips (see fig. 11). The results are shown in table 2.
< measurement conditions >
The measurement device: small bench tester EZ-SX (manufactured by SHIMADZU CORPORATION)
Load cell: 50N
Push-in jig: ZTS series accessories (shape: conical, IMADA CO., LTD. manufactured)
Push-in speed: 60 mm/min
Temperature: 23 deg.C
Humidity: 45 plus or minus 10 percent
(5) Evaluation of pickup Property
After the above-described edge peel strength was measured, 100 adhesive sheet-attached chips were picked up under the following conditions.
< pickup Condition >
A die bonding apparatus: DB800-HSD (manufactured by Hitachi High-Tech corporation)
Promotion: EJECTOR NEEDLE SEN2-83-05 (diameter: 0.7mm, front end shape: hemisphere with radius of 350 μm, MICRONICS JAPAN CO., LTD. manufactured)
Push-up height: 200 μm
Push-up speed: 1 mm/sec
The upper pin is disposed one at the center of the chip. The pickup success rate is 100% and is defined as "a", the pickup success rate is 70% or more and less than 100% and is defined as "B", and the pickup success rate is less than 70% and is defined as "C". The results are shown in table 2.
Figure BDA0003629003810000291
As shown in table 2, the pick-up of the dicing die-bonding integral film of examples 1 to 5 was better than that of comparative example 1. Specifically, in comparative example 1, the difference (f2-f1) was larger than that in examples 1 to 5, and therefore the curing shrinkage and edge peel strength were also higher than those in examples 1 to 5, and the pickup property was insufficient. From the above results, it was confirmed that: the inventionThe dicing die-bonding integrated film of (1) can be applied to a wafer including a plurality of small chips (0.1 to 9mm in area)2) The process for producing a semiconductor device according to (1), and further comprises a pressure-sensitive adhesive layer having excellent pickup properties.
Description of the symbols
1-substrate layer, 3-pressure sensitive adhesive layer, 3 a-1 st region, 3 b-2 nd region, 5-adhesive layer, 5P-adhesive sheet, 5C-cured, 8-DAF, 10-cut die bonding integral film (film), 42-pin, 44-suction chuck, 50-sealing layer, 60-structure, 70-substrate, 80-support plate, 100-semiconductor device, DR-cut ring, F1-1 st face, F2-2 nd face, M-mark, P-push-in jig, Rw-region, S1, S2, S3, S4, S, Ts-chip, Ta-chip with adhesive sheet, W-wafer, Ws-silicon wafer, W1, W2, W3, W4-wire.

Claims (12)

1. A dicing die-bonding integrated film comprising:
a substrate layer;
a pressure-sensitive adhesive layer having a1 st surface facing the base material layer and a 2 nd surface opposite to the 1 st surface, and composed of an active energy ray-curable pressure-sensitive adhesive; and
an adhesive layer provided so as to cover a central portion of the 2 nd surface,
the pressure-sensitive adhesive layer is provided with a1 st area and a 2 nd area, wherein the 1 st area at least comprises an area corresponding to the attaching position of the wafer in the pressure-sensitive adhesive layer, the 2 nd area is arranged in a mode of surrounding the 1 st area,
the 1 st region is a region in which the adhesive strength is reduced as compared with the 2 nd region by irradiation with an active energy ray,
a difference (f2-f1) between f2 and f1 of 6.5 to 9.0N/25mm in the case where the adhesive strength of the 1 st region of the pressure-sensitive adhesive layer to the adhesive layer is f1(N/25mm) measured at a temperature of 23 ℃ and a peel angle of 30 ° and a peel speed of 60 mm/min, and the adhesive strength of the 2 nd region of the pressure-sensitive adhesive layer to the adhesive layer is f2(N/25mm) measured at a temperature of 23 ℃ and a peel angle of 30 ° and a peel speed of 60 mm/min,
the dicing die-bonding integrated film is applied to a wafer including a step of singulating the wafer into 0.1 to 9mm2A process for manufacturing a semiconductor device including a plurality of chips having an area.
2. The cut die-bonded integral film of claim 1,
the difference (f2-f1) between f2 and f1 is 7.0 to 9.0N/25 mm.
3. The cut die-bonded integral film according to claim 1 or 2,
the f1 is 1.1-4.5N/25 mm.
4. The cut die-bonded integral film according to any one of claims 1 to 3,
the f1 is 1.1-3.0N/25 mm.
5. The cut die-bonded integral film according to any one of claims 1 to 4,
the adhesive force of the 2 nd region of the pressure-sensitive adhesive layer to a stainless substrate measured at a temperature of 23 ℃, a peel angle of 90 DEG and a peel speed of 50 mm/min is 0.2N/25mm or more.
6. The cut die-bonded monolithic film according to any one of claims 1 to 5,
the active energy ray-curable pressure-sensitive adhesive contains a (meth) acrylic resin having a chain-polymerizable functional group,
the functional group is at least one selected from the group consisting of an acryloyl group and a methacryloyl group,
the content of the functional group in the (meth) acrylic resin is 0.1 to 1.2 mmol/g.
7. The cut die-bonded integral film of claim 6,
the active energy ray-curable pressure-sensitive adhesive further comprises a crosslinking agent,
the content of the crosslinking agent is 0.1-15% by mass relative to the total mass of the active energy ray-curable pressure-sensitive adhesive.
8. The cut die-bonded integral film of claim 7,
the crosslinking agent is a reaction product of a polyfunctional isocyanate having two or more isocyanate groups in one molecule and a polyol having three or more hydroxyl groups in one molecule.
9. The cut die-bonded integral film according to any one of claims 1 to 8,
the irradiation amount of the active energy ray is 10-1000 mJ/cm2。
10. The cut die-bonded integral film according to any one of claims 1 to 9,
the adhesive layer is composed of an adhesive composition, and the adhesive composition comprises a (meth) acrylic copolymer containing a reactive group, a curing accelerator and a filler.
11. A method for manufacturing a cut die-bond integrated film according to any one of claims 1 to 10, the method comprising, in order:
a step of producing a laminate on the surface of a base material layer, the laminate including a pressure-sensitive adhesive layer composed of an active energy ray-curable pressure-sensitive adhesive and the adhesive layer formed on the surface of the pressure-sensitive adhesive layer; and
and a step of irradiating an area to be the 1 st area of the pressure-sensitive adhesive layer included in the laminate with an active energy ray.
12. A method of manufacturing a semiconductor device, comprising:
preparing the cut die-bond integrated film according to any one of claims 1 to 10;
attaching a wafer to the adhesive layer of the dicing die-bonding integral film, and attaching a dicing ring to the 2 nd surface of the pressure-sensitive adhesive layer;
a step of singulating the wafer into a plurality of chips;
picking up the chip and the adhesive sheet obtained by singulating the adhesive layer from the pressure-sensitive adhesive layer; and
and a step of mounting the chip on a substrate or another chip via the adhesive sheet.
CN202080077215.7A 2019-11-15 2020-09-24 Dicing die-bonding integrated film, method for manufacturing the same, and method for manufacturing semiconductor device Pending CN114641848A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019206929A JP7409030B2 (en) 2019-11-15 2019-11-15 Dicing/die bonding integrated film and its manufacturing method, and semiconductor device manufacturing method
JP2019-206929 2019-11-15
PCT/JP2020/036045 WO2021095369A1 (en) 2019-11-15 2020-09-24 Integrated dicing/die-bonding film, method for manufacturing same, and method for manufacturing semiconductor device

Publications (1)

Publication Number Publication Date
CN114641848A true CN114641848A (en) 2022-06-17

Family

ID=75912198

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080077215.7A Pending CN114641848A (en) 2019-11-15 2020-09-24 Dicing die-bonding integrated film, method for manufacturing the same, and method for manufacturing semiconductor device

Country Status (5)

Country Link
JP (1) JP7409030B2 (en)
KR (1) KR20220100867A (en)
CN (1) CN114641848A (en)
TW (1) TW202134367A (en)
WO (1) WO2021095369A1 (en)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4107417B2 (en) 2002-10-15 2008-06-25 日東電工株式会社 Tip workpiece fixing method
JP4443962B2 (en) 2004-03-17 2010-03-31 日東電工株式会社 Dicing die bond film
CN101523561B (en) 2006-10-06 2011-06-22 住友电木株式会社 Film for semiconductor, method for producing film for semiconductor, and semiconductor device
JP4904432B1 (en) 2011-03-01 2012-03-28 古河電気工業株式会社 Wafer processing tape
WO2019220599A1 (en) 2018-05-17 2019-11-21 日立化成株式会社 Dicing die-bonding integrated film, method of manufacturing same, and method of manufacturing semiconductor device

Also Published As

Publication number Publication date
JP2021082650A (en) 2021-05-27
WO2021095369A1 (en) 2021-05-20
TW202134367A (en) 2021-09-16
KR20220100867A (en) 2022-07-18
JP7409030B2 (en) 2024-01-09

Similar Documents

Publication Publication Date Title
WO2021095302A1 (en) Semiconductor device production method, dicing die-bonding integrated film, and production method therefor
CN112219264B (en) Die-cut/die-bond integrated film, method for producing same, and method for producing semiconductor device
CN114641849A (en) Dicing die-bonding integrated film, method for manufacturing the same, and method for manufacturing semiconductor device
CN113366621B (en) Method for evaluating pickup property, die-cut and die-bond integrated film, method for evaluating die-cut and die-bond integrated film, method for sorting die-cut and die-bond integrated film, and method for manufacturing semiconductor device
CN112292431B (en) Crystal cutting and crystal bonding integrated film and pressure-sensitive adhesive film used by same
CN114641848A (en) Dicing die-bonding integrated film, method for manufacturing the same, and method for manufacturing semiconductor device
CN113348533B (en) Method for evaluating pickup property, die-cut/die-bond integrated film, method for evaluating the same, method for sorting the same, and method for manufacturing semiconductor device
WO2022255322A1 (en) Method for producing semiconductor device, and dicing-die bonding integrated film
WO2022255321A1 (en) Integrated dicing/die bonding film and method for producing semiconductor device
TWI851723B (en) Die-cut-die bonding integrated film and method for manufacturing semiconductor device

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
CB02 Change of applicant information
CB02 Change of applicant information

Address after: Tokyo

Applicant after: Lishennoco Co.,Ltd.

Address before: Tokyo

Applicant before: Showa electrical materials Co.,Ltd.