WO2019220599A1

WO2019220599A1 - Dicing die-bonding integrated film, method of manufacturing same, and method of manufacturing semiconductor device

Info

Publication number: WO2019220599A1
Application number: PCT/JP2018/019179
Authority: WO
Inventors: 尚弘木村; 強田澤; 大久保　恵介; 達也矢羽田
Original assignee: 日立化成株式会社
Priority date: 2018-05-17
Filing date: 2018-05-17
Publication date: 2019-11-21
Also published as: CN112219264A; TWI778263B; KR20200140383A; KR102278942B1; CN112219264B; TW202013474A; JP6789500B2; SG11202011259WA; WO2019221246A1; JPWO2019221246A1

Abstract

The dicing die-bonding integrated film according to the present invention includes: a base layer; a tackifier layer that has first surface that faces the base layer and a second surface opposite the first surface; and an adhesive layer that is provided so as to cover a center portion of the second surface. The tackifier layer has: a first region that includes at least a region that corresponds to an affixing position of a wafer on the adhesive layer; and a second region that is located so as to surround the first region. The first region is a region in which adhesive force is reduced compared to the second region due to irradiation of active energy rays, and the adhesive force of the first region to the adhesive layer measured under the conditions of a peel angle of 30° and a peel rate of 60 mm/min. at a temperature of 23°C is 1.2 N/25 mm to 4.5 N/25 mm.

Description

Dicing / die bonding integrated film, manufacturing method thereof, and manufacturing method of semiconductor device

The present disclosure relates to a dicing / die bonding integrated film, a manufacturing method thereof, and a manufacturing method of a semiconductor device using the film.

Semiconductor devices are manufactured through the following steps. First, the dicing process is carried out with the dicing adhesive film attached to the wafer. Thereafter, an expanding process, a picking process, a mounting process, a die bonding process, and the like are performed.

In a semiconductor device manufacturing process, a film called a dicing / die bonding integrated film is used. This film has a structure in which a base material layer, a pressure-sensitive adhesive layer, and an adhesive layer are laminated in this order. For example, the film is used as follows. First, the wafer is diced in a state where the surface on the adhesive layer side is attached to the wafer and the wafer is fixed by a dicing ring. As a result, the wafer is divided into a large number of chips. Then, after weakening the adhesive force of the pressure-sensitive adhesive layer to the adhesive layer by irradiating the pressure-sensitive adhesive layer with ultraviolet rays, the chip is removed from the pressure-sensitive adhesive layer together with the adhesive piece obtained by dividing the adhesive layer into pieces. Pick up. Thereafter, the semiconductor device is manufactured through a step of mounting the chip on a substrate or the like via the adhesive piece. In addition, the laminated body which consists of the chip | tip obtained through a dicing process and the adhesive piece adhering to this is called DAF (Die Attach Film).

As described above, an adhesive layer (dicing film) whose adhesive strength is weakened by irradiation with ultraviolet rays is referred to as a UV curable type. On the other hand, the pressure-sensitive adhesive layer in which the adhesive force remains constant without being irradiated with ultraviolet rays in the semiconductor device manufacturing process is called a pressure-sensitive type. The dicing / die bonding integrated film with pressure-sensitive adhesive layer does not require users (mainly semiconductor device manufacturers) to carry out the process of irradiating ultraviolet rays, and there is no need for equipment for this purpose. There are benefits. In Patent Document 1, it can be said that the pressure-sensitive adhesive layer is a UV curable type in that it contains a component that is cured by ultraviolet light. On the other hand, only a predetermined portion of the pressure-sensitive adhesive layer is irradiated with ultraviolet light in advance. Disclosed is a dicing die-bonding film that can be said to be a pressure-sensitive type because it does not require irradiation with ultraviolet rays in the manufacturing process.

Japanese Patent No. 4443996

The pressure-sensitive adhesive layer of the dicing die-bonding integrated film is required to have a high adhesive force to the adhesive layer and the dicing ring in the dicing process. If the adhesive strength of the pressure-sensitive adhesive layer is insufficient, peeling occurs between the adhesive layer and the pressure-sensitive adhesive layer as the dicing blade rotates at a high speed, and the chip flies with the adhesive piece (hereinafter referred to as “DAF”). Or a phenomenon in which the dicing ring peels from the adhesive layer due to the flow of cutting water (hereinafter, this phenomenon is referred to as “ring peeling”). The present inventors paid attention to the fact that these phenomena become remarkable as the size of a chip to be manufactured by dicing becomes smaller. The main reason why these phenomena become prominent is that, as the size of the chip becomes smaller, the dicing will take a longer time compared to the conventional one, and the wafer in the middle of cutting and the chip after cutting will be reduced. It is assumed that this is due to the impact of the dicing blade and exposure to the cutting water for a long time.

Therefore, the present inventors are applicable to a process of dicing a wafer into a large number of small chips (area 9 mm ² or less), and a predetermined amount of active energy rays (for example, ultraviolet rays) are irradiated on a specific portion in advance. Therefore, the present inventors have developed a dicing / die bonding integrated film that has an adhesive layer in which the adhesive strength of the part is lower than that of the other part and satisfies the following characteristics. That is, the region where the dicing ring is attached has a high adhesive strength that can withstand the flow of cutting water in the dicing process, while the region that is pre-irradiated with a predetermined amount of active energy rays can withstand external force from a dicing blade or the like. On the other hand, the inventors worked on the development of a dicing / die bonding integrated film having adhesive strength suitable for subsequent pickup.

The present disclosure can be applied to a process of dicing a wafer into a large number of small chips (area 9 mm ² or less), and has a pressure-sensitive adhesive layer that can sufficiently suppress DAF skipping in the dicing process and has excellent pickup properties. An object of the present invention is to provide a dicing / die bonding integrated film and a method for producing the same. Moreover, this indication aims at providing the manufacturing method of the semiconductor device using this dicing die-bonding integrated film.

One aspect of the present disclosure relates to a method for manufacturing a semiconductor device. The manufacturing method covers a base material layer, a pressure-sensitive adhesive layer having a first surface facing the base material layer and a second surface on the opposite side, and a central portion of the second surface of the pressure-sensitive adhesive layer. And a step of preparing a dicing / die bonding integrated film provided with an adhesive layer provided on the substrate, a wafer attached to the adhesive layer of the dicing / die bonding integrated film, and a second surface of the adhesive layer A step of attaching a dicing ring to the substrate, a step of dividing the wafer into a plurality of chips having an area of 9 mm ² or less (dicing step), and an adhesive piece obtained by dividing the adhesive layer into pieces, A step of picking up from the layer and a step of mounting the chip on the substrate or another chip through the adhesive piece, the pressure-sensitive adhesive layer being the first corresponding to the region of the adhesive layer to which the wafer is attached. Territory And a second region to which the dicing ring is attached, and the first region is a region in which the adhesive force is reduced as compared with the second region by irradiation with active energy rays, The adhesive strength of the first region with respect to the adhesive layer, measured at a temperature of 23 ° C. under a peeling angle of 30 ° and a peeling speed of 60 mm / min, is 1.2 N / 25 mm to 4.5 N / 25 mm.

According to the method for manufacturing a semiconductor device, a semiconductor device can be manufactured with a sufficiently high yield due to the fact that DAF jumping in the dicing process can be sufficiently suppressed and excellent pick-up properties from the adhesive layer can be achieved.

One aspect of the present disclosure relates to a dicing / die bonding integrated film. This film has a base material layer, an adhesive layer having a first surface facing the base material layer and a second surface on the opposite side, and an adhesive provided so as to cover the center of the second surface The pressure-sensitive adhesive layer includes a first region including at least a region corresponding to a wafer attachment position in the adhesive layer, and a second region positioned so as to surround the first region. The first region is a region in which the adhesive strength is lower than that of the second region by irradiation with active energy rays, and the temperature is 23 ° C. and the peeling angle is 30 ° and the peeling speed is 60 mm / min. The measured adhesive strength of the first region to the adhesive layer is 1.2 N / 25 mm or more and 4.5 N / 25 mm or less.

By using the dicing / die bonding integrated film for manufacturing a semiconductor device, DAF jumping in the dicing process can be sufficiently suppressed, and excellent pick-up property from the adhesive layer can be achieved. A semiconductor device can be manufactured with a yield.

From the viewpoint of suppressing ring peeling in the dicing step, it is preferable that the adhesive force of the adhesive layer to the stainless steel substrate in the second region is 0.2 N / 25 mm or more. This adhesive strength means the peel strength measured at a temperature of 23 ° C. under conditions of a peeling angle of 90 ° and a peeling speed of 50 mm / min.

The first and second regions of the pressure-sensitive adhesive layer are made of, for example, the same composition before irradiation with active energy rays, and the first region is 10 to 1000 mJ / second relative to the region that becomes the first region. It is formed through a step of irradiating an active energy ray in an amount of cm ² .

One aspect of the present disclosure relates to a method of manufacturing the dicing / die bonding integrated film. The first aspect of this production method is formed on the surface of the base material layer, the pressure-sensitive adhesive layer made of a composition whose adhesive strength is reduced by irradiation with active energy rays, and the surface of the pressure-sensitive adhesive layer. The step of producing a laminate including the adhesive layer and the step of irradiating active energy rays to the region to be the first region of the pressure-sensitive adhesive layer included in the laminate are included in this order. On the other hand, the second aspect of the production method includes a step of forming a pressure-sensitive adhesive layer made of a composition whose adhesive strength is reduced by irradiating active energy rays on the surface of the base material layer, and a pressure-sensitive adhesive layer. The step of irradiating the region to be the first region with active energy rays and the step of laminating the adhesive layer on the surface of the pressure-sensitive adhesive layer after irradiating the active energy rays are included in this order.

According to the present disclosure, the present invention can be applied to a process of dicing a wafer into a large number of small chips, can sufficiently suppress DAF jump in the dicing process, and is equipped with a pressure-sensitive adhesive layer having excellent pickup properties. An integral film is provided. Moreover, according to this indication, the manufacturing method of a dicing die-bonding integrated film and the manufacturing method of a semiconductor device using the said film are provided.

FIG. 1A is a plan view showing an embodiment of a dicing / die bonding integrated film, and FIG. 1B is a schematic cross-sectional view along the line BB shown in FIG. 1A. FIG. 2 is a schematic view showing a state in which a dicing ring is attached to the peripheral portion of the pressure-sensitive adhesive layer of the dicing / die bonding integrated film and a wafer is attached to the surface of the adhesive layer. FIG. 3 is a cross-sectional view schematically showing how the 30 ° peel strength of the pressure-sensitive adhesive layer relative to the adhesive layer is measured. FIG. 4 is a schematic cross-sectional view of an embodiment of a semiconductor device. 5 (a) to 5 (d) are cross-sectional views schematically showing a process of manufacturing DAF (a laminate of a chip and an adhesive piece). 6 is a cross-sectional view schematically showing a process of manufacturing the semiconductor device shown in FIG. FIG. 7 is a cross-sectional view schematically showing the process of manufacturing the semiconductor device shown in FIG. 8 is a cross-sectional view schematically showing a process of manufacturing the semiconductor device shown in FIG.

Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. In the following description, the same or corresponding parts are denoted by the same reference numerals, and redundant description is omitted. In addition, this invention is not limited to the following embodiment. In this specification, (meth) acryl means acryl or methacryl.

<Dicing and die bonding integrated film>
FIG. 1A is a plan view showing a dicing / die bonding integrated film according to this embodiment, and FIG. 1B is a schematic cross-sectional view taken along line BB of FIG. Dicing / die bonding integrated film 10 (hereinafter, simply referred to as “film 10” in some cases) is a semiconductor including a dicing process for dividing wafer W into a plurality of chips having an area of 9 mm ² or less and a subsequent pick-up process. The present invention is applied to the device manufacturing process (see FIGS. 5C and 5D).

The film 10 includes a base material layer 1, a pressure-sensitive adhesive layer 3 having a first surface F1 facing the base material layer 1 and a second surface F2 opposite to the first surface F1, and a second surface F2 of the pressure-sensitive adhesive layer 3. And an adhesive layer 5 provided so as to cover the central portion of the substrate in this order. In the present embodiment, an example in which one laminate of the pressure-sensitive adhesive layer 3 and the adhesive layer 5 is formed on the square base material layer 1 is illustrated, but the base material layer 1 has a predetermined length ( For example, the laminated body of the adhesive layer 3 and the adhesive layer 5 may be arranged at a predetermined interval so as to be aligned in the longitudinal direction.

(Adhesive layer)
The pressure-sensitive adhesive layer 3 includes a first region 3a that includes at least a region Rw corresponding to the attachment position of the wafer W in the adhesive layer 5, and a second region 3b that is positioned so as to surround the first region 3a. . A broken line in FIGS. 1A and 1B indicates a boundary between the first region 3a and the second region 3b. The first region 3a and the second region 3b are made of the same composition before irradiation with active energy rays. The first region 3a is a region in which the adhesive force is reduced as compared with the second region 3b when irradiated with active energy rays such as ultraviolet rays. The second region 3b is a region where the dicing ring DR is attached (see FIG. 2). The second region 3b is a region that is not irradiated with active energy rays and has a high adhesive force to the dicing ring DR.

The adhesive strength of the first region 3a to the adhesive layer 5 is 1.2 N / 25 mm or more and 4.5 N / 25 mm or less. This adhesive strength is a 30 ° peel strength measured at a temperature of 23 ° C. under conditions of a peeling angle of 30 ° and a peeling speed of 60 mm / min. FIG. 3 is a cross-sectional view schematically showing a state in which the 30 ° peel strength of the pressure-sensitive adhesive layer 3 is measured with the adhesive layer 5 of the measurement sample (width 25 mm × length 100 mm) fixed to the support plate 80. It is. By controlling the adhesive strength (30 ° peel strength) of the first region 3a to the adhesive layer 5 within the above range, both suppression of DAF skipping during dicing and excellent pickup properties can be achieved at a sufficiently high level. . This makes it possible to manufacture a semiconductor device with a sufficiently high yield. The lower limit value of the adhesive strength may be 1.5 N / 25 mm or 2.0 N / 25 mm, and the upper limit value may be 3.5 N / 25 mm or 2.5 N / 25 mm.

As described above, the film 10 is suitable for a dicing process for dividing a wafer into a plurality of small chips having an area of 9 mm ² or less and a subsequent pickup process. The present inventors have studied by paying attention to the fact that the pickup behavior of a small chip having a size of 3 mm × 3 mm or less (area 9 mm ² or less) is different from that of a large chip having a size of, for example, about 8 mm × 6 mm. As a result, the adhesive strength of the first region 3a to the adhesive layer 5 was specified in the above range (1.2 N / 25 mm or more and 4.5 N / 25 mm or less). That is, when picking up a large chip by pushing up the center of the large chip from below with a pin of a push-up jig, the 30 ° peel strength of the first region 3a with respect to the adhesive layer 5 is within the above range. With the increase of the interface, the interface peeling between the adhesive layer and the adhesive piece progresses from the edge part of the DAF toward the center part, but the adhesive force of the adhesive layer is too strong, so the interface peeling increases the pin. The chip does not catch up, and the chip is deformed excessively and is liable to be cracked or picked up. That is, the pick-up property of the large chip is mainly governed by the interface peeling between the adhesive layer and the adhesive piece, and the adhesive force of the adhesive layer to the adhesive layer is smaller than the lower limit (1.2 N / 25 mm) of the above range. The present inventors have found that it should be set. On the other hand, the pick-up property of the small chip is mainly governed by the peeling of the edge portion of the DAF, and once the edge portion is peeled off by the push-up by the pin, the peeling of the interface between the adhesive layer and the adhesive piece is smooth thereafter. The present inventors have found that the process proceeds. For this reason, even if the adhesive strength of the first region 3a to the adhesive layer 5 is relatively strong, excellent pick-up performance can be achieved in the case of a small chip. Moreover, since the adhesive force of the 1st area | region 3a with respect to the adhesive bond layer 5 is comparatively strong, DAF jump in a dicing process can fully be suppressed.

1st area | region 3a which has the adhesive force of the said range with respect to the adhesive bond layer 5 is formed by irradiation of an active energy ray. The present inventors have found that reducing the adhesive strength of the pressure-sensitive adhesive layer by irradiation with active energy rays affects the peeling of the edge portion of the DAF. That is, if the adhesive strength of the first region 3a is excessively reduced by the irradiation of the active energy ray, the 30 ° peel strength of the first region 3a with respect to the adhesive layer 5 is lowered, while the pickup target is small. In the case of a chip, the edge portion of the DAF tends to be difficult to peel off, and the chip is liable to be deformed excessively to cause cracks or pickup errors. The adhesive strength (1.2N / 25mm or more and 4.5N / 25mm or less) of the 1st area | region 3a with respect to the adhesive bond layer 5 is what does not reduce excessively the adhesive force before irradiating an active energy ray. As a result, peeling of the edge portion of the DAF easily occurs even in a small chip. In the present embodiment, for example, the adhesive strength of the first region 3a of the adhesive layer 3 can be reduced by, for example, relatively reducing the amount of the crosslinking agent in the adhesive layer or reducing the irradiation amount of the active energy ray. Can be adjusted.

The adhesive strength of the second region R2 to the stainless steel substrate is preferably 0.2 N / 25 mm or more. This adhesive strength is 90 ° peel strength measured at a temperature of 23 ° C. under conditions of a peeling angle of 90 ° and a peeling speed of 50 mm / min. When the adhesive strength is 0.2 N / 25 mm or more, ring peeling during dicing can be sufficiently suppressed. The lower limit value of the adhesive strength may be 0.3 N / 25 mm or 0.4 N / 25 mm, and the upper limit value is, for example, 2.0 N / 25 mm, or 1.0 N / 25 mm.

The pressure-sensitive adhesive layer before irradiation with active energy rays is made of a pressure-sensitive adhesive composition containing, for example, a (meth) acrylic resin, a photopolymerization initiator, and a crosslinking agent. The second region R2 where the active energy ray is not irradiated has the same composition as the pressure-sensitive adhesive layer before the active energy ray irradiation. Hereinafter, the components contained in the pressure-sensitive adhesive composition will be described in detail.

[(Meth) acrylic resin]
The pressure-sensitive adhesive composition contains a (meth) acrylic resin having a chain polymerizable functional group, and the functional group is preferably at least one selected from an acryloyl group and a methacryloyl group. The content of the functional group in the pressure-sensitive adhesive layer before irradiation with active energy rays is, for example, 0.1 to 1.2 mmol / g, 0.3 to 1.0 mmol / g, or 0.5 to 0.8 mmol / g. g may be sufficient. When the content of the functional group is 0.1 mmol / g or more, it is easy to form a region (first region R1) in which the adhesive strength is moderately reduced by irradiation with active energy rays, while 1.2 mmol / g It is easy to achieve the excellent pick-up property by being g or less.

(Meth) acrylic resin can be obtained by synthesis by a known method. Examples of the synthesis method include solution polymerization, suspension polymerization, emulsion polymerization, bulk polymerization, precipitation polymerization, gas phase polymerization, plasma polymerization, and supercritical polymerization. The polymerization reaction includes radical polymerization, cationic polymerization, anionic polymerization, living radical polymerization, living cationic polymerization, living anion polymerization, coordination polymerization, immodal polymerization, ATRP (atom transfer radical polymerization) and RAFT ( A technique such as reversible addition-fragmentation chain transfer polymerization) may also be mentioned. Among these, synthesis by radical polymerization using a solution polymerization method can be blended using the resin solution obtained by polymerization as it is, in addition to good economic efficiency, high reaction rate, easy polymerization control, etc. And so on.

Here, the synthesis method of the (meth) acrylic resin will be described in detail by taking as an example a method of obtaining the (meth) acrylic resin by radical polymerization using the solution polymerization method.

The monomer used when synthesizing the (meth) acrylic resin is not particularly limited as long as it has one (meth) acryloyl group in one molecule. Specific examples include methyl (meth) acrylate, ethyl (meth) acrylate, butyl (meth) acrylate, isobutyl (meth) acrylate, tert-butyl (meth) acrylate, butoxyethyl (meth) acrylate, and isoamyl (meth) acrylate. , Hexyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, heptyl (meth) acrylate, octyl heptyl (meth) acrylate, nonyl (meth) acrylate, decyl (meth) acrylate, undecyl (meth) acrylate, lauryl (meth) Acrylate, tridecyl (meth) acrylate, tetradecyl (meth) acrylate, pentadecyl (meth) acrylate, hexadecyl (meth) acrylate, stearyl (meth) acrylate, Nyl (meth) acrylate, methoxypolyethylene glycol (meth) acrylate, ethoxypolyethylene glycol (meth) acrylate, methoxypolypropylene glycol (meth) acrylate, ethoxypolypropylene glycol (meth) acrylate, mono (2- (meth) acryloyloxyethyl) Aliphatic (meth) acrylates such as succinate; cyclopentyl (meth) acrylate, cyclohexyl (meth) acrylate, cyclopentyl (meth) acrylate, dicyclopentanyl (meth) acrylate, dicyclopentenyl (meth) acrylate, isobornyl (meth) acrylate , Mono (2- (meth) acryloyloxyethyl) tetrahydrophthalate, mono (2- (meth) acryloyloxyethyl) hexahydride Alicyclic (meth) acrylates such as phthalates; benzyl (meth) acrylate, phenyl (meth) acrylate, o-biphenyl (meth) acrylate, 1-naphthyl (meth) acrylate, 2-naphthyl (meth) acrylate, phenoxyethyl ( (Meth) acrylate, p-cumylphenoxyethyl (meth) acrylate, o-phenylphenoxyethyl (meth) acrylate, 1-naphthoxyethyl (meth) acrylate, 2-naphthoxyethyl (meth) acrylate, phenoxypolyethylene glycol (meth) acrylate, nonyl Phenoxypolyethylene glycol (meth) acrylate, phenoxypolypropylene glycol (meth) acrylate, 2-hydroxy-3-phenoxypropyl (meth) acrylate, 2-hydro Xyl-3- (o-phenylphenoxy) propyl (meth) acrylate, 2-hydroxy-3- (1-naphthoxy) propyl (meth) acrylate, 2-hydroxy-3- (2-naphthoxy) propyl (meth) acrylate, etc. Aromatic (meth) acrylates such as 2-tetrahydrofurfuryl (meth) acrylate, N- (meth) acryloyloxyethyl hexahydrophthalimide, 2- (meth) acryloyloxyethyl-N-carbazole, etc. (Meth) acrylates, modified caprolactones thereof, ω-carboxy-polycaprolactone mono (meth) acrylate, glycidyl (meth) acrylate, α-ethylglycidyl (meth) acrylate, α-propylglycidyl (meth) acrylate, α-butylglycidyl (Meta) Acry 2-methylglycidyl (meth) acrylate, 2-ethylglycidyl (meth) acrylate, 2-propylglycidyl (meth) acrylate, 3,4-epoxybutyl (meth) acrylate, 3,4-epoxyheptyl (meth) Acrylate, α-ethyl-6,7-epoxyheptyl (meth) acrylate, 3,4-epoxycyclohexylmethyl (meth) acrylate, o-vinylbenzyl glycidyl ether, m-vinylbenzyl glycidyl ether, p-vinylbenzyl glycidyl ether, etc. A compound having an ethylenically unsaturated group and an epoxy group; (2-ethyl-2-oxetanyl) methyl (meth) acrylate, (2-methyl-2-oxetanyl) methyl (meth) acrylate, 2- (2-ethyl- 2-Oxetanyl) ethyl ( ) Acrylate, 2- (2-methyl-2-oxetanyl) ethyl (meth) acrylate, 3- (2-ethyl-2-oxetanyl) propyl (meth) acrylate, 3- (2-methyl-2-oxetanyl) propyl Compounds having an ethylenically unsaturated group and oxetanyl group such as (meth) acrylate; compounds having an ethylenically unsaturated group and isocyanate group such as 2- (meth) acryloyloxyethyl isocyanate; 2-hydroxyethyl (meth) acrylate, Ethylenically unsaturated groups such as 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 3-chloro-2-hydroxypropyl (meth) acrylate, 2-hydroxybutyl (meth) acrylate and hydroxyl groups Compounds that have It is possible to obtain an appropriate combination for the purpose to (meth) acrylic resin.

The (meth) acrylic resin preferably has at least one functional group selected from a hydroxyl group, a glycidyl group, an amino group, and the like as a reaction point with a functional group-introducing compound or a crosslinking agent described later. Monomers for synthesizing a (meth) acrylic resin having a hydroxyl group include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, and 3-chloro-2. -Compounds having an ethylenically unsaturated group and a hydroxyl group, such as hydroxypropyl (meth) acrylate and 2-hydroxybutyl (meth) acrylate, may be used alone or in combination of two or more. Can do.

Monomers for synthesizing a (meth) acrylic resin having a glycidyl group include glycidyl (meth) acrylate, α-ethylglycidyl (meth) acrylate, α-propylglycidyl (meth) acrylate, α-butylglycidyl (meth) Acrylate, 2-methylglycidyl (meth) acrylate, 2-ethylglycidyl (meth) acrylate, 2-propylglycidyl (meth) acrylate, 3,4-epoxybutyl (meth) acrylate, 3,4-epoxyheptyl (meth) acrylate , Α-ethyl-6,7-epoxyheptyl (meth) acrylate, 3,4-epoxycyclohexylmethyl (meth) acrylate, o-vinylbenzyl glycidyl ether, m-vinylbenzyl glycidyl ether, p-vinylbenzyl Include compounds having an ethylenically unsaturated group and an epoxy group such as glycidyl ether, and these can be alone one, or combination of two or more.

The (meth) acrylic resin synthesized from these monomers preferably contains a functional group capable of chain polymerization. The chain polymerizable functional group is, for example, at least one selected from an acryloyl group and a methacryloyl group. The functional group capable of chain polymerization is introduced into the (meth) acrylic resin by, for example, reacting the following compound (functional group-introducing compound) with the (meth) acrylic resin synthesized as described above. be able to. Specific examples of functional group-introducing compounds include 2-methacryloyloxyethyl isocyanate, meta-isopropenyl-α, α-dimethylbenzyl isocyanate, methacryloyl isocyanate, allyl isocyanate, 1,1- (bisacryloyloxymethyl) ethyl isocyanate; diisocyanate compound Or an acryloyl monoisocyanate compound obtained by reacting a polyisocyanate compound with hydroxyethyl (meth) acrylate or 4-hydroxybutylethyl (meth) acrylate; a diisocyanate compound or polyisocyanate compound, a polyol compound, and hydroxyethyl (meth) Examples include acryloyl monoisocyanate compounds obtained by reaction with acrylates. Among these, 2-methacryloyloxyethyl isocyanate is particularly preferable. These compounds can also be used individually by 1 type, and can also be used in combination of 2 or more type.

[Photopolymerization initiator]
The photopolymerization initiator is not particularly limited as long as it generates an active species capable of chain polymerization by irradiation with active energy rays (at least one selected from ultraviolet rays, electron beams and visible rays). And radical photopolymerization initiators. Here, the chain-polymerizable active species means one that initiates a polymerization reaction by reacting with a chain-polymerizable functional group.

Examples of radical photopolymerization initiators include benzoin ketals such as 2,2-dimethoxy-1,2-diphenylethane-1-one; 1-hydroxycyclohexyl phenyl ketone, 2-hydroxy-2-methyl-1-phenylpropane-1 -One, α-hydroxy ketones such as 1- [4- (2-hydroxyethoxy) phenyl] -2-hydroxy-2-methyl-1-propan-1-one; 2-benzyl-2-dimethylamino-1- Α-amino ketones such as (4-morpholinophenyl) -butan-1-one, 1,2-methyl-1- [4- (methylthio) phenyl] -2-morpholinopropan-1-one; 1- [4 Oxime esters such as-(phenylthio) phenyl] -1,2-octadion-2- (benzoyl) oxime; bis (2,4,6-trimethyl) Phosphine oxides such as benzoyl) phenylphosphine oxide, bis (2,6-dimethoxybenzoyl) -2,4,4-trimethylpentylphosphine oxide, 2,4,6-trimethylbenzoyldiphenylphosphine oxide; 2- (o-chlorophenyl) -4,5-diphenylimidazole dimer, 2- (o-chlorophenyl) -4,5-di (methoxyphenyl) imidazole dimer, 2- (o-fluorophenyl) -4,5-diphenylimidazole dimer 2,4,5-triarylimidazole such as 2- (o-methoxyphenyl) -4,5-diphenylimidazole dimer, 2- (p-methoxyphenyl) -4,5-diphenylimidazole dimer Dimer; benzophenone, N, N'-tetramethyl-4,4'-diaminoben Benzophenone compounds such as zophenone, N, N′-tetraethyl-4,4′-diaminobenzophenone, 4-methoxy-4′-dimethylaminobenzophenone; 2-ethylanthraquinone, phenanthrenequinone, 2-tert-butylanthraquinone, octamethylanthraquinone 1,2-benzanthraquinone, 2,3-benzanthraquinone, 2-phenylanthraquinone, 2,3-diphenylanthraquinone, 1-chloroanthraquinone, 2-methylanthraquinone, 1,4-naphthoquinone, 9,10-phenanthra Quinone compounds such as quinone, 2-methyl-1,4-naphthoquinone and 2,3-dimethylanthraquinone; benzoin ethers such as benzoin methyl ether, benzoin ethyl ether and benzoin phenyl ether; Benzoin compounds such as zoin, methylbenzoin and ethylbenzoin; benzyl compounds such as benzyldimethyl ketal; acridine compounds such as 9-phenylacridine and 1,7-bis (9,9'-acridinylheptane): N-phenylglycine , Coumarin.

The content of the photopolymerization initiator in the pressure-sensitive adhesive composition is, for example, 0.1 to 30 parts by mass and 0.3 to 10 parts by mass with respect to 100 parts by mass of the (meth) acrylic resin content. It is preferably 0.5 to 5 parts by mass. When the content of the photopolymerization initiator is less than 0.1 parts by mass, the pressure-sensitive adhesive layer becomes insufficiently cured after irradiation with active energy rays, and pickup failure tends to occur. When the content of the photopolymerization initiator exceeds 30 parts by mass, contamination of the adhesive layer (transfer of the photopolymerization initiator to the adhesive layer) tends to occur.

[Crosslinking agent]
The crosslinking agent is used, for example, for the purpose of controlling the elastic modulus and / or tackiness of the pressure-sensitive adhesive layer. The crosslinking agent may be a compound having two or more functional groups that can react with at least one functional group selected from the hydroxyl group, glycidyl group, amino group, and the like of the (meth) acrylic resin in one molecule. . Examples of the bond formed by the reaction between the crosslinking agent and the (meth) acrylic resin include an ester bond, an ether bond, an amide bond, an imide bond, a urethane bond, and a urea bond.

In this embodiment, it is preferable to employ a compound having two or more isocyanate groups in one molecule as a crosslinking agent. When such a compound is used, it can easily react with the hydroxyl group, glycidyl group, amino group and the like of the (meth) acrylic resin to form a strong crosslinked structure.

Examples of the compound having two or more isocyanate groups in one molecule include 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diisocyanate, 1,4-xylene diisocyanate, diphenylmethane-4 , 4'-diisocyanate, diphenylmethane-2,4'-diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane-4,4'-diisocyanate, dicyclohexylmethane-2,4'-diisocyanate, lysine isocyanate Isocyanate compounds such as

As the crosslinking agent, a reaction product (isocyanate group-containing oligomer) of the above-described isocyanate compound and a polyhydric alcohol having two or more OH groups in one molecule may be employed. Examples of polyhydric alcohols having two or more OH groups in one molecule include ethylene glycol, propylene glycol, butylene glycol, 1,6-hexanediol, 1,8-octanediol, 1,9-nonanediol, Examples include 1,10-decanediol, 1,11-undecanediol, 1,12-dodecanediol, glycerin, pentaerythritol, dipentaerythritol, 1,4-cyclohexanediol, and 1,3-cyclohexanediol.

Among these, as a crosslinking agent, a reaction product of a polyfunctional isocyanate having two or more isocyanate groups in one molecule and a polyhydric alcohol having three or more OH groups in one molecule (isocyanate group-containing oligomer). It is further desirable that By using such an isocyanate group-containing oligomer as a cross-linking agent, the pressure-sensitive adhesive layer 3 forms a dense cross-linked structure, thereby sufficiently suppressing the pressure-sensitive adhesive from adhering to the adhesive layer 5 in the pickup process. .

What is necessary is just to set suitably content of the crosslinking agent in an adhesive composition according to the cohesive force and breaking elongation rate calculated | required with respect to an adhesive layer, adhesiveness with the adhesive bond layer 5, etc. Specifically, the content of the crosslinking agent is, for example, 3 to 30 parts by mass, preferably 4 to 15 parts by mass, and preferably 7 to 7 parts by mass with respect to 100 parts by mass of the (meth) acrylic resin content. It is more preferable that it is 10 mass parts. By setting the content of the cross-linking agent in the above range, it is possible to balance both the characteristics required of the pressure-sensitive adhesive layer in the dicing process and the characteristics required of the pressure-sensitive adhesive layer 3 in the die bonding process, Excellent pick-up properties can also be achieved.

When the content of the crosslinking agent is less than 3 parts by mass with respect to 100 parts by mass of the (meth) acrylic resin, the formation of the crosslinked structure tends to be insufficient. The interfacial adhesion with the agent layer 5 is not sufficiently lowered, and defects are likely to occur during pick-up. On the other hand, when the content of the cross-linking agent exceeds 30 parts by mass with respect to 100 parts by mass of the (meth) acrylic resin, the pressure-sensitive adhesive layer 3 tends to become excessively hard. The semiconductor chip is easy to peel off.

The content of the crosslinking agent with respect to the total mass of the pressure-sensitive adhesive composition is, for example, 0.1 to 20 mass%, and may be 3 to 17 mass% or 5 to 15 mass%. When the content of the crosslinking agent is 0.1% by mass or more, it is easy to form a region (first region R1) in which the adhesive strength is appropriately reduced by irradiation with active energy rays, and on the other hand, at 15% by mass or less. It is easy to achieve excellent pick-up properties.

The thickness of the pressure-sensitive adhesive layer 3 may be appropriately set according to the conditions (temperature, tension, etc.) of the expanding process, and is, for example, 1 to 200 μm, preferably 5 to 50 μm, and preferably 10 to 20 μm. It is more preferable. If the thickness of the pressure-sensitive adhesive layer 3 is less than 1 μm, the tackiness tends to be insufficient, and if it exceeds 200 μm, the kerf width is narrow when expanded (the stress is relaxed when the pin is pushed up), and the pickup is likely to be insufficient. .

The pressure-sensitive adhesive layer 3 is formed on the base material layer 1. As a method for forming the pressure-sensitive adhesive layer 3, a known method can be employed. For example, a laminate of the base material layer 1 and the pressure-sensitive adhesive layer 3 may be formed by a two-layer extrusion method, or a varnish for forming the pressure-sensitive adhesive layer 3 is prepared and applied to the surface of the base material layer 1. Alternatively, the pressure-sensitive adhesive layer 3 may be formed on a film that has been processed or subjected to a release treatment, and this may be transferred to the base material layer 1.

The varnish for forming the pressure-sensitive adhesive layer 3 is preferably prepared using an organic solvent that can dissolve a (meth) acrylic resin, a photopolymerization initiator, and a crosslinking agent and volatilizes by heating. Specific examples of the organic solvent include aromatic hydrocarbons such as toluene, xylene, mesitylene, cumene and p-cymene; cyclic ethers such as tetrahydrofuran and 1,4-dioxane; methanol, ethanol, isopropanol, butanol, ethylene glycol, propylene Alcohols such as glycol; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, 4-hydroxy-4-methyl-2-pentanone; methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, γ-butyrolactone, etc. Esters; carbonates such as ethylene carbonate and propylene carbonate; ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, ethylene group Many compounds such as coal dimethyl ether, ethylene glycol diethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol dimethyl ether, propylene glycol diethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether Monohydric alcohol alkyl ether; ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether acetate, propylene glycol monomethyl ether acetate, propylene glycol monoe Examples thereof include polyhydric alcohol alkyl ether acetates such as tilether acetate, diethylene glycol monomethyl ether acetate and diethylene glycol monoethyl ether acetate; amides such as N, N-dimethylformamide, N, N-dimethylacetamide and N-methylpyrrolidone.

Among these, from the viewpoint of solubility and boiling point, for example, toluene, methanol, ethanol, isopropanol, acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, methyl acetate, ethyl acetate, butyl acetate, ethylene glycol monomethyl ether, ethylene glycol mono Ethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, diethylene glycol dimethyl ether, ethylene glycol monomethyl ether acetate, propylene glycol monomethyl ether acetate, and N, N-dimethylacetamide are preferred. These organic solvents may be used individually by 1 type, and may use 2 or more types together. The solid content concentration of the varnish is usually preferably 10 to 60% by mass.

(Base material layer)
As the base material layer 1, a known polymer sheet or film can be used, and there is no particular limitation as long as the expanding process can be performed under a low temperature condition. Specifically, as the base material layer 1, crystalline polypropylene, amorphous polypropylene, high density polyethylene, medium density polyethylene, low density polyethylene, ultra low density polyethylene, low density linear polyethylene, polybutene, polymethylpentene, etc. Polyolefin, ethylene-vinyl acetate copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene-butene copolymer, ethylene- Hexene copolymers, polyesters such as polyurethane, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyetheretherketone, polyimide, polyetherimide, polyamide, wholly aromatic polyamide, polyphenylsulfide, alla (Paper), glass, glass cloth, fluororesin, polyvinyl chloride, polyvinylidene chloride, cellulosic resin, silicone resin, or a mixture of these with a plasticizer, or cured by crosslinking by electron beam irradiation Things.

The base material layer 1 has a surface mainly composed of at least one resin selected from polyethylene, polypropylene, a polyethylene-polypropylene random copolymer, and a polyethylene-polypropylene block copolymer. Are preferably in contact with each other. These resins are good base materials from the viewpoints of properties such as Young's modulus, stress relaxation property, melting point, etc., as well as cost and recycling of used materials after use. The base material layer 1 may be a single layer, but may have a multilayer structure in which layers made of different materials are laminated as necessary. In order to control the adhesion with the pressure-sensitive adhesive layer 3, the surface of the base material layer 1 may be subjected to a surface roughening treatment such as a mat treatment or a corona treatment.

(Adhesive layer)
An adhesive composition constituting a known die bonding film can be applied to the adhesive layer 5. Specifically, the adhesive composition that constitutes the adhesive layer 5 preferably contains an epoxy group-containing acrylic copolymer, an epoxy resin, and an epoxy resin curing agent. According to the adhesive layer 5 containing these components, it has excellent chip / substrate and chip / chip adhesive properties, and can provide electrode embedding properties and wire embedding properties, and can be bonded at a low temperature in the die bonding process. It is preferable because it can be cured in a short time and has excellent reliability after molding with a sealant.

Examples of the epoxy resin include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, alicyclic epoxy resin, aliphatic chain epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, Bisphenol A novolac type epoxy resin, diglycidyl etherified product of biphenol, diglycidyl etherified product of naphthalenediol, diglycidyl etherified product of phenol, diglycidyl etherified product of alcohol, and alkyl-substituted products and halides thereof , Bifunctional epoxy resins such as hydrogenated products, and novolak type epoxy resins. Moreover, you may apply other generally known epoxy resins, such as a polyfunctional epoxy resin and a heterocyclic ring-containing epoxy resin. These can be used alone or in combination of two or more. In addition, components other than the epoxy resin may be included as impurities within a range that does not impair the characteristics.

Examples of the epoxy resin curing agent include a phenol resin that can be obtained by reacting a phenol compound and a xylylene compound that is a divalent linking group in the presence of a non-catalyst or an acid catalyst. Examples of the phenol compound used for the production of the phenol resin include phenol, o-cresol, m-cresol, p-cresol, o-ethylphenol, p-ethylphenol, on-propylphenol, mn-propylphenol, pn-propylphenol, o-isopropylphenol, m-isopropylphenol, p-isopropylphenol, on-butylphenol, mn-butylphenol, pn-butylphenol, o-isobutylphenol, m-isobutylphenol, p-isobutylphenol, octylphenol, nonylphenol, 2,4-xylenol, 2,6-xylenol, 3,5-xylenol, 2,4,6-trimethylphenol, resorcin, catechol, hydroquinone, 4 Methoxyphenol, o-phenylphenol, m-phenylphenol, p-phenylphenol, p-cyclohexylphenol, o-allylphenol, p-allylphenol, o-benzylphenol, p-benzylphenol, o-chlorophenol, p- Examples include chlorophenol, o-bromophenol, p-bromophenol, o-iodophenol, p-iodophenol, o-fluorophenol, m-fluorophenol, p-fluorophenol and the like. These phenol compounds may be used alone or in combination of two or more. The following xylylene dihalide, xylylene diglycol and derivatives thereof can be used as the xylylene compound which is a divalent linking group used in the production of the phenol resin. That is, α, α′-dichloro-p-xylene, α, α′-dichloro-m-xylene, α, α′-dichloro-o-xylene, α, α′-dibromo-p-xylene, α, α ′ -Dibromo-m-xylene, α, α'-dibromo-o-xylene, α, α'-diiodo-p-xylene, α, α'-diiodo-m-xylene, α, α'-diiodo-o-xylene Α, α′-dihydroxy-p-xylene, α, α′-dihydroxy-m-xylene, α, α′-dihydroxy-o-xylene, α, α′-dimethoxy-p-xylene, α, α′- Dimethoxy-m-xylene, α, α'-dimethoxy-o-xylene, α, α'-diethoxy-p-xylene, α, α'-diethoxy-m-xylene, α, α'-diethoxy-o-xylene, α, α'-di-n-propoxy-p-xylene, α, α'-di-n Propoxy-m-xylene, α, α'-di-n-propoxy-o-xylene, α, α'-di-isopropoxy-p-xylene, α, α'-diisopropoxy-m-xylene, α, α'-diisopropoxy-o-xylene, α, α'-di-n-butoxy-p-xylene, α, α'-di-n-butoxy-m-xylene, α, α'-di-n- Butoxy-o-xylene, α, α'-diisobutoxy-p-xylene, α, α'-diisobutoxy-m-xylene, α, α'-diisobutoxy-o-xylene, α, α'-di-tert-butoxy- Examples thereof include p-xylene, α, α′-di-tert-butoxy-m-xylene, and α, α′-di-tert-butoxy-o-xylene. These can be used alone or in combination of two or more.

When the above phenol compound and xylylene compound are reacted, mineral acids such as hydrochloric acid, sulfuric acid, phosphoric acid and polyphosphoric acid; organic acids such as dimethyl sulfuric acid, diethyl sulfuric acid, p-toluenesulfonic acid, methanesulfonic acid and ethanesulfonic acid Carboxylic acids; Super strong acids such as trifluoromethane sulfonic acid; Strong acidic ion exchange resins such as alkane sulfonic acid type ion exchange resin; Super strong acidic ion exchange such as perfluoroalkane sulfonic acid type ion exchange resin Resins (trade name: Nafion, Nafion, manufactured by Du Pont, “Nafion” is a registered trademark); natural and synthetic zeolites; practically at 50 to 250 ° C. using an acidic catalyst such as activated clay (acid clay) The reaction is performed until the xylylene compound as a raw material disappears and the reaction composition becomes constant. The reaction time depends on the raw materials and the reaction temperature, but is generally about 1 to 15 hours. In practice, it may be determined while tracking the reaction composition by GPC (gel permeation chromatography) or the like.

The epoxy group-containing acrylic copolymer is preferably a copolymer obtained by using glycidyl acrylate or glycidyl methacrylate as a raw material in an amount of 0.5 to 6% by mass with respect to the obtained copolymer. When this amount is 0.5% by mass or more, high adhesive force can be easily obtained, and when it is 6% by mass or less, gelation can be suppressed. The balance can be a mixture of alkyl acrylate having 1 to 8 carbon atoms such as methyl acrylate and methyl methacrylate, alkyl methacrylate, styrene, acrylonitrile and the like. Among these, ethyl (meth) acrylate and / or butyl (meth) acrylate are particularly preferable. The mixing ratio is preferably adjusted in consideration of the Tg of the copolymer. When Tg is less than −10 ° C., the tackiness of the adhesive layer 5 in the B-stage state tends to increase, and the handleability tends to deteriorate. In addition, the upper limit of the glass transition point (Tg) of an epoxy-group-containing acrylic copolymer is 30 degreeC, for example. The polymerization method is not particularly limited, and examples thereof include pearl polymerization and solution polymerization. Examples of commercially available epoxy group-containing acrylic copolymers include HTR-860P-3 (trade name, manufactured by Nagase ChemteX Corporation).

The weight average molecular weight of the epoxy group-containing acrylic copolymer is 100,000 or more, and if it is in this range, the adhesiveness and heat resistance are high, preferably 300,000 to 3,000,000, and 500,000 to 2,000,000. Is more preferable. It can suppress that the filling property between a semiconductor chip and the board | substrate which supports this as a weight average molecular weight is 3 million or less falls. The weight average molecular weight is a polystyrene conversion value using a standard polystyrene calibration curve by gel permeation chromatography (GPC).

The adhesive layer 5 may further contain a curing accelerator such as a tertiary amine, imidazole, or quaternary ammonium salt, if necessary. Specific examples of the curing accelerator include 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and 1-cyanoethyl-2-phenylimidazolium trimellitate. These may be used alone or in combination of two or more.

The adhesive layer 5 may further contain an inorganic filler as necessary. Specific examples of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, Examples thereof include crystalline silica and amorphous silica. These may be used alone or in combination of two or more.

The thickness of the adhesive layer 5 is, for example, 1 to 300 μm, preferably 5 to 150 μm, and more preferably 10 to 100 μm. If the thickness of the adhesive layer 5 is less than 1 μm, the adhesiveness tends to be insufficient, while if it exceeds 300 μm, the splitting property and the pickup property at the time of expansion tend to be insufficient.

In addition, the aspect which does not contain a thermosetting resin may be sufficient as the adhesive bond layer 5. FIG. For example, when the adhesive layer 5 includes a reactive group-containing (meth) acrylic copolymer, the adhesive layer 5 includes a reactive group-containing (meth) acrylic copolymer, a curing accelerator, and a filler. Any material can be used (see Example 4).

<Manufacturing method of dicing / die bonding integrated film>
The production method of the film 10 is formed on the surface of the base material layer 1, the pressure-sensitive adhesive layer made of a pressure-sensitive adhesive composition whose adhesive strength is reduced by irradiating active energy rays, and the surface of the pressure-sensitive adhesive layer. The step of producing a laminate including the adhesive layer 5 and the step of irradiating active energy rays to the region to be the first region R1 of the pressure-sensitive adhesive layer included in the laminate are included in this order. The dose of the active energy ray to the area to be the first region R1, for example, a 10 ~ 1000mJ / cm ^2, may be 100 ~ 700mJ / cm ² or 200 ~ 500mJ / cm ^2.

In the above production method, a laminate of the pressure-sensitive adhesive layer and the adhesive layer 5 is prepared first, and then a specific region of the pressure-sensitive adhesive layer is irradiated with active energy rays. As described below, the first region 3a may be formed by irradiating the pressure-sensitive adhesive layer before being bonded to the adhesive layer 5 with active energy rays. That is, the manufacturing method of the film 10 includes a step of forming a pressure-sensitive adhesive layer made of a composition whose adhesive strength is reduced by irradiating active energy rays on the surface of the base material layer 1, and a step of the pressure-sensitive adhesive layer. 1 includes a step of irradiating an active energy ray to a region to be a region 3a and a step of laminating an adhesive layer 5 on the surface of the pressure-sensitive adhesive layer 3 after the irradiation of the active energy ray in this order. It's okay.

<Semiconductor device and manufacturing method thereof>
FIG. 4 is a cross-sectional view schematically showing the semiconductor device according to this embodiment. The semiconductor device 100 shown in this figure includes a substrate 70, four chips S1, S2, S3, S4 stacked on the surface of the substrate 70, electrodes (not shown) on the surface of the substrate 70, and four chips S1. , S2, S3, and S4, wires W1, W2, W3, and W4, and a sealing layer 50 that seals them.

The substrate 70 is, for example, an organic substrate, and may be a metal substrate such as a lead frame. From the viewpoint of suppressing warpage of the semiconductor device 100, the thickness of the substrate 70 is, for example, 70 to 140 μm, and may be 80 to 100 μm.

The four chips S1, S2, S3, S4 are stacked via a cured product 5C of the adhesive piece 5P. The shape of the chips S1, S2, S3, S4 in plan view is, for example, a square or a rectangle. The area of the chips S1, S2, S3, S4 is 9 mm ² or less, and may be 0.1-4 mm ² or 0.1-2 mm ² . The length of one side of the chips S1, S2, S3, S4 is, for example, 3 mm or less, and may be 0.1 to 2.0 mm or 0.1 to 1.0 mm. The thickness of the chips S1, S2, S3, S4 is, for example, 10 to 170 μm, and may be 25 to 100 μm. The lengths of one side of the four chips S1, S2, S3, and S4 may be the same or different from each other, and the thickness is the same.

The manufacturing method of the semiconductor device 100 includes a step of preparing the above-described film 10, a wafer W attached to the adhesive layer 5 of the film 10, and a dicing ring DR with respect to the second surface F <b> 2 of the pressure-sensitive adhesive layer 3. A step of dicing the wafer W into a plurality of chips S having an area of 9 mm ² or less (dicing step), and DAF 8 (a laminate of the chip S1 and the adhesive piece 5P, see FIG. 5D). A step of picking up from the first region 3a of the pressure-sensitive adhesive layer 3 and a step of mounting the chip S1 on the substrate 70 via the adhesive piece 5P are included.

An example of a method for manufacturing the DAF 8 will be described with reference to FIGS. 5 (a) to 5 (d). First, the above-described film 10 is prepared. As shown in FIG. 5A and FIG. 5B, the film 10 is attached so that the adhesive layer 5 is in contact with one surface of the wafer W. Further, the dicing ring DR is attached to the second surface F2 of the pressure-sensitive adhesive layer 3.

The wafer W, the adhesive layer 5 and the pressure-sensitive adhesive layer 3 are diced. As a result, the wafer W is divided into chips S as shown in FIG. The adhesive layer 5 is also separated into pieces 5P. Examples of the dicing method include a method using a dicing blade or a laser. The wafer W may be thinned by grinding the wafer W prior to dicing.

After dicing, the chips S are separated from each other by expanding the base material layer 1 under normal temperature or cooling conditions as shown in FIG. 5D without irradiating the adhesive layer 3 with active energy rays. The adhesive piece 5P is peeled off from the pressure-sensitive adhesive layer 3 by being pushed up by the pin 42 while the DAF 8 is sucked by the suction collet 44 and picked up.

A method for manufacturing the semiconductor device 100 will be specifically described with reference to FIGS. First, as shown in FIG. 6, the first chip S <b> 1 (chip S) is pressure-bonded to a predetermined position of the substrate 70 through the adhesive piece 5 </ b> P. Next, the adhesive piece 5P is cured by heating. Thereby, the adhesive piece 5P is cured to become a cured product 5C. The curing treatment of the adhesive piece 5P may be performed in a pressurized atmosphere from the viewpoint of reducing voids.

In the same manner as the mounting of the chip S1 on the substrate 70, the second-stage chip S2 is mounted on the surface of the chip S1. Further, the structure 60 shown in FIG. 7 is manufactured by mounting the third-stage and fourth-stage chips S3 and S4. After the chips S1, S2, S3, S4 and the substrate 70 are electrically connected by the wires W1, W2, W3, W4 (see FIG. 8), the semiconductor element and the wires are sealed by the sealing layer 50. The semiconductor device 100 shown in FIG. 4 is completed.

As mentioned above, although embodiment of this indication was described in detail, this invention is not limited to the said embodiment. For example, in the said embodiment, although the film 10 provided with the base material layer 1, the adhesive layer 3, and the adhesive bond layer 5 in this order was illustrated, the aspect which does not comprise the adhesive bond layer 5 may be sufficient. . The film 10 may further include a cover film (not shown) that covers the adhesive layer 5.

Hereinafter, the present disclosure will be described more specifically based on examples, but the present invention is not limited to these examples. Unless otherwise stated, all chemicals used reagents.

<Example 1>
[Synthesis of acrylic resin (Production Example 1)]
The following components were placed in a flask having a capacity of 2000 ml equipped with a three-one motor, a stirring blade, and a nitrogen introduction tube.
・ Ethyl acetate (solvent): 635 g
・ 2-ethylhexyl acrylate: 395 g
・ 2-hydroxyethyl acrylate: 100 g
・ Methacrylic acid: 5g
・ Azobisisobutyronitrile: 0.08 g

After the contents were stirred until it became sufficiently uniform, bubbling was performed at a flow rate of 500 ml / min for 60 minutes to degas dissolved oxygen in the system. The temperature was raised to 78 ° C. over 1 hour, and polymerization was performed for 6 hours after the temperature was raised. Next, the reaction solution was transferred to a pressure vessel having a capacity of 2000 ml equipped with a three-one motor, a stirring blade, and a nitrogen introduction tube, heated at 120 ° C. and 0.28 MPa for 4.5 hours, and then room temperature (25 ° C., and so on) ).

Next, 490 g of ethyl acetate was added and diluted by stirring. After adding 0.025 g of methoquinone as a polymerization inhibitor and 0.10 g of dioctyltin dilaurate as a urethanization catalyst, 81 g of 2-methacryloxyethyl isocyanate (manufactured by Showa Denko KK, Karenz MOI (trade name)) was added. In addition, the mixture was reacted at 70 ° C. for 6 hours, and then cooled to room temperature. Next, ethyl acetate was added to adjust the non-volatile content in the acrylic resin solution to 35% by mass, and a solution containing (A) an acrylic resin (Production Example 1) having a functional group capable of chain polymerization was obtained. .

The solution containing the acrylic resin (A) obtained as described above was vacuum-dried at 60 ° C. overnight. The solid content thus obtained was subjected to elemental analysis with a fully automatic elemental analyzer (trade name: varioEL, manufactured by Elemental Co., Ltd.), and the content of introduced 2-methacryloxyethyl isocyanate was calculated from the nitrogen content. 0.50 mmol / g.

Moreover, the polystyrene conversion weight average molecular weight of (A) acrylic resin was calculated | required using the following apparatuses. That is, SD-8022 / DP-8020 / RI-8020 manufactured by Tosoh Corporation is used, Gelpack GL-A150-S / GL-A160-S manufactured by Hitachi Chemical Co., Ltd. is used for the column, and tetrahydrofuran is used for the eluent. GPC measurement was performed. As a result, the polystyrene equivalent weight average molecular weight was 800,000. The hydroxyl value and acid value measured according to the method described in JIS K0070 were 46.9 mgKOH / g and 6.5 mgKOH / g. These results are summarized in Table 1.

[Production of dicing film (adhesive layer)]
A varnish for forming the pressure-sensitive adhesive layer was prepared by mixing the following components (see Table 2). The amount of ethyl acetate (solvent) was adjusted so that the total solid content of the varnish was 25% by mass.
(A) Acrylic resin solution (Production Example 1): 100 g (solid content)
(B) Photopolymerization initiator (1-hydroxycyclohexyl phenyl ketone, manufactured by Ciba Specialty Chemicals Co., Ltd., Irgacure 184, “Irgacure” is a registered trademark): 0.8 g
(B) Photopolymerization initiator (bis (2,4,6-trimethylbenzoyl) -phenylphosphine oxide, manufactured by Ciba Specialty Chemicals Co., Ltd., Irgacure 819, “Irgacure” is a registered trademark): 0.2 g
-(C) Crosslinking agent (polyfunctional isocyanate, manufactured by Nippon Polyurethane Industry Co., Ltd., Coronate L, solid content: 75%): 8.0 g (solid content)
・ Ethyl acetate (solvent)

A polyethylene terephthalate film (width 450 mm, length 500 mm, thickness 38 μm) having a release treatment on one surface was prepared. An adhesive layer-forming varnish was applied to the surface subjected to the mold release treatment using an applicator and then dried at 80 ° C. for 5 minutes. This obtained the laminated body (dicing film) which consists of a polyethylene terephthalate film and the 30-micrometer-thick adhesive layer formed on it.

A polyolefin film (width 450 mm, length 500 mm, thickness 80 μm) having a corona treatment on one surface was prepared. The surface subjected to the corona treatment and the adhesive layer of the laminate were bonded together at room temperature. Next, the pressure-sensitive adhesive layer was transferred to a polyolefin film (cover film) by pressing with a rubber roll. Then, the dicing film with a cover film was obtained by leaving it to stand at room temperature for 3 days.

[Production of Die Bonding Film (Adhesive Layer A)]
First, cyclohexanone (solvent) was added to the following composition and stirred and mixed, and then kneaded for 90 minutes using a bead mill.
・ Epoxy resin (YDCN-700-10 (trade name), cresol novolak type epoxy resin manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., epoxy equivalent 210, molecular weight 1200, softening point 80 ° C.): 14 parts by mass ・ Phenolic resin (Mirex XLC-LL (Trade name), manufactured by Mitsui Chemicals, Inc., phenol resin, hydroxyl group equivalent 175, water absorption 1.8%, heating weight reduction rate at 350 ° C. 4%): 23 parts by mass. Silane coupling agent (NUC A-189 ( (Product name) NUC Co., Ltd., γ-mercaptopropyltrimethoxysilane): 0.2 parts by mass Silane coupling agent (NUCA-1160 (trade name), Nihon Unicar Co., Ltd., γ-ureidopropyltriethoxysilane) : 0.1 parts by mass / filler (“SC2050-HLG (trade name), Admatex Corporation , Silica, average particle diameter 0.500): 32 parts by weight

After adding the following components to the composition obtained as described above, a varnish for forming an adhesive layer was obtained through the steps of stirring and mixing and vacuum degassing.
Epoxy group-containing acrylic copolymer (HTR-860P-3 (trade name), manufactured by Nagase ChemteX Corporation, weight average molecular weight 800,000): 16 parts by mass Curing accelerator (Curesol 2PZ-CN (trade name), Shikoku Kasei Kogyo Co., Ltd., 1-cyanoethyl-2-phenylimidazole, “Curazole” is a registered trademark)

A polyethylene terephthalate film (thickness: 35 μm) having a release treatment on one surface was prepared. A varnish for forming an adhesive layer was applied to the surface subjected to the release treatment using an applicator, and then heated and dried at 140 ° C. for 5 minutes. This obtained the laminated body (die bonding film) which consists of a polyethylene terephthalate film (carrier film) and the 20-micrometer-thick adhesive layer (B stage state) formed on it.

[Production of dicing and die bonding integrated film]
A die bonding film composed of an adhesive layer and a carrier film was cut into a circle having a diameter of 335 mm together with the carrier film. A dicing film from which the polyethylene terephthalate film had been peeled was attached to this at room temperature, and then allowed to stand at room temperature for 1 day. Thereafter, the dicing film was cut into a circle having a diameter of 370 mm. In the adhesive layer of the dicing / die bonding integrated film thus obtained, the region corresponding to the wafer application position (first region of the pressure-sensitive adhesive layer) was irradiated with ultraviolet rays as follows. That is, ultraviolet rays were partially irradiated using a pulsed xenon lamp at an irradiation amount of 70 W and 150 mJ / cm ² . A black screen was used to irradiate ultraviolet light onto a portion having an inner diameter of 318 mm from the center of the film. In this way, a plurality of dicing / die bonding integrated films for use in various evaluation tests described later were obtained.

<Example 2>
The irradiation amount of ultraviolet rays instead of the 150 mJ / cm ^2, other that was 300 mJ / cm ² in the same manner as in Example 1 to obtain a plurality of dicing die bonding integrated film.

<Example 3>
The irradiation amount of ultraviolet rays instead of the 150 mJ / cm ^2, other that was 500 mJ / cm ² in the same manner as in Example 1 to obtain a plurality of dicing die bonding integrated film.

<Example 4>
A plurality of dicing die bondings were carried out in the same manner as in Example 1 except that a die bonding film having an adhesive layer B formed as follows was used instead of the one having the adhesive layer A. An integral film was obtained.
[Production of Die Bonding Film (Adhesive Layer B)]
First, cyclohexanone (solvent) was added to the following components, mixed with stirring, and then kneaded for 90 minutes using a bead mill.
Filler (“SC2050-HLG (trade name), manufactured by Admatechs Co., Ltd., silica, average particle size 0.500 μm): 50 parts by mass After adding the following components to the composition obtained as described above, stirring was performed. A varnish for forming an adhesive layer was obtained through the steps of mixing and vacuum degassing.
Epoxy group-containing acrylic copolymer (HTR-860P-3 (trade name), manufactured by Nagase ChemteX Corp., weight average molecular weight 800,000): 100 parts by mass Curing accelerator (Curesol 2PZ-CN (trade name), 0.1 part by mass of Shikoku Kasei Kogyo Co., Ltd., 1-cyanoethyl-2-phenylimidazole, “Cureazole” is a registered trademark)

<Example 5>
Instead of the raw material monomer composition shown in Production Example 1 in Table 1, a raw material monomer composition shown in Production Example 2 was used, and a solution of (A) acrylic resin according to Production Example 2 produced by the same method as Production Example 1 was obtained. A plurality of dicing / die bonding integrated films were obtained in the same manner as Example 2 except that this solution was used.

<Example 6>
The amount of the crosslinking agent in the pressure-sensitive adhesive layer is 4.0 parts by mass instead of 8.0 parts by mass, and the amount of UV irradiation is 500 mJ / cm ² instead of 300 mJ / cm ^2. In the same manner as in Example 5, a plurality of dicing / die bonding integrated films were obtained.

<Example 7>
Instead of the raw material monomer composition shown in Production Example 1 in Table 1, a raw material monomer composition shown in Production Example 3 was used, and a solution of (A) an acrylic resin according to Production Example 3 produced by the same method as Production Example 1 was obtained. A plurality of dicing / die bonding integrated films were obtained in the same manner as Example 2 except that this solution was used.

<Example 8>
Instead of the raw material monomer composition shown in Production Example 1 in Table 1, the raw material monomer composition shown in Production Example 4 was used, and a solution of (A) an acrylic resin according to Production Example 4 produced in the same manner as Production Example 1 was obtained. A plurality of dicing / die bonding integrated films were obtained in the same manner as in Example 3 except that this solution was used.

<Comparative Example 1>
A plurality of dicing / die bonding integrated films were obtained in the same manner as in Example 1 except that the amount of the crosslinking agent in the pressure-sensitive adhesive layer was changed to 15.0 parts by mass instead of 8.0 parts by mass.

<Comparative Example 2>
A plurality of dicing / die bonding integrated films were obtained in the same manner as in Example 5 except that the irradiation amount of ultraviolet rays was changed to 500 mJ / cm ² instead of 300 mJ / cm ² .

<Comparative Example 3>
Other possible was 150 mJ / cm ² instead of the irradiation amount of ultraviolet rays with 500 mJ / cm ² in the same manner as in Example 8, to obtain a plurality of dicing die bonding integrated film.

<Comparative Example 4>
Instead of the raw material monomer composition shown in Production Example 1 in Table 1, the raw material monomer composition shown in Production Example 5 was used, and a solution of (A) an acrylic resin according to Production Example 5 produced in the same manner as Production Example 1 was obtained. A plurality of dicing / die bonding integrated films were obtained in the same manner as in Example 1 except that this solution was used and ultraviolet rays were not irradiated.

[Evaluation test]
(1) Measurement of adhesive force (30 ° peel strength) of adhesive layer to adhesive layer The adhesive strength of the adhesive layer (ultraviolet irradiation region) to the adhesive layer was evaluated by measuring 30 ° peel strength. That is, a measurement sample having a width of 25 mm and a length of 100 mm was cut out from the dicing / die bonding integrated film. The measurement sample was a laminate of an adhesive layer (ultraviolet irradiation region) and an adhesive layer. The peel strength of the pressure-sensitive adhesive layer (ultraviolet irradiation region) relative to the adhesive layer was measured using a tensile tester. The measurement conditions were a peeling angle of 30 ° and a tensile speed of 60 mm / min. The sample was stored and the peel strength was measured in an environment of a temperature of 23 ° C. and a relative humidity of 40%.

(2) Measurement of 15 ° peel strength of pressure-sensitive adhesive layer relative to adhesive layer 30 ° peel as described above, except that the peel angle was 15 ° and the tensile speed was 150 mm / min (2.5 mm / sec). The 15 ° peel strength was measured in the same manner as the strength measurement. This measurement condition is the same as the condition described in claim 1 of Patent Document 1.

(3) Measurement of adhesive force (90 ° peel strength) of adhesive layer to stainless steel substrate The adhesive strength of the adhesive layer (ultraviolet non-irradiated region) to the stainless steel substrate was evaluated by measuring 90 ° peel strength. That is, a measurement sample having a width of 25 mm and a length of 100 mm was cut out from the dicing / die bonding integrated film. The measurement sample was a laminate of an adhesive layer (non-irradiated region) and an adhesive layer. After the surface of the adhesive layer side of the sample was attached to a stainless steel substrate (SUS430BA), the peel strength of the adhesive layer (ultraviolet non-irradiated area) to the stainless steel substrate using an autograph “AGS-1000” manufactured by Shimadzu Corporation Was measured. The measurement conditions were a peeling angle of 90 ° and a peeling speed of 50 mm / min.

(4) Evaluation of dicing property A dicing / die bonding integrated film was bonded to a wafer (diameter: 8 inches, thickness: 50 μm) under conditions of 80 ° C. × 10 seconds. Thereafter, the wafer was diced under the following conditions.
<Dicing conditions>
・ Dicer: DFD-651, manufactured by DISCO
・ Blade: 27HECC made by DISCO
・ Blade rotation speed: 40000 rpm
・ Dicing speed: 30mm / sec
・ Dicing depth: 25μm
・ Cut mode: Down cut ・ Dicing size: 1.0mm × 1.0mm

(Evaluation of peeling of adhesive piece from pressure-sensitive adhesive layer)
During dicing, it was confirmed whether or not peeling of the adhesive piece from the pressure-sensitive adhesive layer occurred. While dicing one wafer, the sample in which the stacking and the peeling were not recognized was evaluated as “A”, and the sample in which the peeling or the small area of the stack was observed was observed. Rated “B”.

(Evaluation of peeling of chip from adhesive layer)
During dicing, it was confirmed whether or not peeling of the chip from the adhesive layer occurred. During the dicing of one wafer, a sample in which no chip jump occurred was evaluated as “A”, and a sample in which chip jump occurred even once was evaluated as “B”.

(crack)
The cutting cross section of the chip after dicing was confirmed with a microscope, and it was evaluated whether or not chip chipping occurred. A cut cross section of 25 chips was observed, and a sample in which no chipping was observed was evaluated as “A”, and a sample in which even a chipping was observed was evaluated as “B”.

(About ring peeling)
It was visually evaluated whether or not a phenomenon (ring peeling) occurred in which the dicing ring peeled from the pressure-sensitive adhesive layer during dicing. A sample in which ring peeling did not occur was evaluated as “A”, and a sample in which ring peeling occurred was evaluated as “B”.

(5) Evaluation of pick-up property The pick-up property of the chip after the dicing process was evaluated using a Rexable Die Bonder “DB-730” manufactured by Renesas East Japan Semiconductor. The pickup collet uses “RUBBER TIP 13-087E-33 (size: 1 × 1 mm)” manufactured by Micromechanics and the push-up pin “EJECTOR NEEDLE SEN2-83-05 (diameter : 0.7 mm, tip shape: semicircle with a diameter of 350 μm) ”. One push-up pin was arranged at the center. The pick-up property was evaluated under the conditions of a pin push-up speed at the time of pick-up: 10 mm / second and a push-up height: 75 μm. When 100 chips are picked up continuously and no chip crack or pick-up error occurs, it is evaluated as “A”, and when one chip breaks or pick-up error occurs, it is determined as “B”. did. In addition, about the sample which ring peeling generate | occur | produced at the time of dicing, after producing an integrated sample again, the ring contact | adherence part was reinforced with the adhesive tape, and it evaluated after dicing.

DESCRIPTION OF SYMBOLS 1 ... Base material layer, 3 ... Adhesive layer, 3a ... 1st area | region, 3b ... 2nd area | region, 5 ... Adhesive layer, 5P ... Adhesive piece, 5C ... Hardened | cured material, 8 ... DAF, 10 ... Dicing Die bonding integrated film, 70 ... substrate, 100 ... semiconductor device, DR ... dicing ring, F1 ... first surface, F2 ... second surface, R1 ... first region, R2 ... second region, S , S1, S2, S3, S4 ... chip, W ... wafer

Claims

A base material layer, a pressure-sensitive adhesive layer having a first surface facing the base material layer and a second surface opposite to the first surface, and a central portion of the second surface of the pressure-sensitive adhesive layer are provided so as to cover A step of preparing a dicing die-bonding integrated film comprising the adhesive layer formed,
A step of pasting a wafer on the adhesive layer of the dicing die bonding integrated film and a step of pasting a dicing ring on the second surface of the pressure-sensitive adhesive layer;
Dividing the wafer into a plurality of chips having an area of 9 mm 2 or less;
A step of picking up the chip from the pressure-sensitive adhesive layer together with an adhesive piece formed by separating the adhesive layer;
Mounting the chip on the substrate or another chip via the adhesive piece;
Including
The pressure-sensitive adhesive layer has a first region corresponding to a region where the wafer is attached to the adhesive layer, and a second region where the dicing ring is attached.
The first region is a region in which the adhesive force is reduced as compared with the second region by irradiation with active energy rays,
The adhesive strength of the first region with respect to the adhesive layer is 1.2 N / 25 mm or more and 4.5 N / 25 mm or less measured at a temperature of 23 ° C. under conditions of a peeling angle of 30 ° and a peeling speed of 60 mm / min. A method for manufacturing a semiconductor device.
2. The semiconductor device according to claim 1, wherein the second region has an adhesive force of 0.2 N / 25 mm or more measured at a temperature of 23 ° C. under conditions of a peeling angle of 90 ° and a peeling speed of 50 mm / min. Manufacturing method.
3. The method of manufacturing a semiconductor device according to claim 1, wherein the plurality of chips have a square or rectangular shape and have sides of 3 mm or less.
The first and second regions of the pressure-sensitive adhesive layer are composed of the same composition before irradiation with active energy rays,
4. The method according to claim 1, wherein the first region is formed through a step of irradiating the region to be the first region with an active energy ray in an amount of 10 to 1000 mJ / cm 2. A method for manufacturing a semiconductor device according to claim 1.
A base material layer;
A pressure-sensitive adhesive layer having a first surface facing the base material layer and a second surface opposite to the first surface;
An adhesive layer provided so as to cover a central portion of the second surface;
With
The pressure-sensitive adhesive layer has a first region including at least a region corresponding to a wafer attachment position in the adhesive layer, and a second region positioned so as to surround the first region,
The first region is a region in which the adhesive force is reduced as compared with the second region by irradiation with active energy rays,
The adhesive strength of the first region with respect to the adhesive layer is 1.2 N / 25 mm or more and 4.5 N / 25 mm or less measured at a temperature of 23 ° C. under conditions of a peeling angle of 30 ° and a peeling speed of 60 mm / min. Dicing / die bonding integrated film.
The dicing / adhering force according to claim 5, wherein an adhesive force of the second region to the stainless steel substrate measured at a temperature of 23 ° C at a peeling angle of 90 ° and a peeling speed of 50 mm / min is 0.2 N / 25 mm or more. Die bonding integrated film.
The dicing / die bonding integrated film according to claim 5 or 6, applied to a semiconductor device manufacturing process including a step of dividing a wafer into a plurality of chips having an area of 9 mm 2 or less.
The second region includes a (meth) acrylic resin having a functional group capable of chain polymerization,
The functional group is at least one selected from an acryloyl group and a methacryloyl group;
The dicing / die bonding integrated film according to any one of claims 5 to 7, wherein a content of the functional group in the second region is 0.1 mmol / g to 1.2 mmol / g.
The second region comprises a cross-linking agent;
The dicing / die bonding integrated film according to any one of claims 5 to 8, wherein the content of the crosslinking agent in the second region is 0.1 to 20% by mass.
The dicing according to claim 9, wherein the crosslinking agent is a reaction product of a polyfunctional isocyanate having two or more isocyanate groups in one molecule and a polyhydric alcohol having three or more OH groups in one molecule.・ Die bonding integrated film.
The dicing die according to any one of claims 5 to 10, wherein the adhesive layer is made of a composition containing an energy curable group-containing (meth) acrylic copolymer, a curing accelerator, and a filler. Bonding integrated film.
A method for producing a dicing / die bonding integrated film according to any one of claims 5 to 11,
A laminate comprising a pressure-sensitive adhesive layer made of a composition whose adhesive strength is reduced by irradiating active energy rays on the surface of the base material layer, and the adhesive layer formed on the surface of the pressure-sensitive adhesive layer. Producing a body;
Irradiating an active energy ray to a region to be the first region of the pressure-sensitive adhesive layer included in the laminate;
A method for producing a dicing / die-bonding integrated film.
A method for producing a dicing / die bonding integrated film according to any one of claims 5 to 11,
On the surface of the base material layer, a step of forming a pressure-sensitive adhesive layer made of a composition whose adhesive strength is reduced by irradiation with active energy rays;
Irradiating active energy rays to a region to be the first region of the pressure-sensitive adhesive layer;
Laminating the adhesive layer on the surface of the pressure-sensitive adhesive layer after irradiating the active energy ray;
A method for producing a dicing / die-bonding integrated film.