KR20200140383A - Dicing-die-bonding integrated film, manufacturing method thereof, and manufacturing method of semiconductor device - Google Patents

Abstract

The dicing-die-bonding integrated film according to the present disclosure includes a base material layer, an adhesive layer having a first surface facing the base layer and a second surface opposite to the base layer, and an adhesive layer provided to cover a central portion of the second surface It is equipped with. The pressure-sensitive adhesive layer has a first region including at least a region corresponding to the affixing position of the wafer in the adhesive layer, and a second region positioned so as to surround the first region. The first region is a region in which the adhesive strength is lowered compared to the second region by irradiation with active energy rays, and is measured under conditions of a peeling angle of 30° and a peeling rate of 60 mm/min at a temperature of 23°C. The adhesive force of the first region to is 1.2N/25mm or more and 4.5N/25mm or less.

Description

Dicing-die-bonding integrated film, manufacturing method thereof, and manufacturing method of semiconductor device

The present disclosure relates to a dicing-die-bonding integrated film, a method for manufacturing the same, and a method for manufacturing a semiconductor device using the film.

The semiconductor device is manufactured through the following process. First, a dicing process is performed in the state which affixed the adhesive film for dicing to a wafer. After that, an expand process, a pickup process, a mounting process and a die bonding process are performed.

In a semiconductor device manufacturing process, a film called a dicing die-bonding integrated film is used. This film has a structure in which a base layer, an adhesive layer, and an adhesive layer are laminated in this order, and is used, for example, as follows. First, the wafer is diced while affixing the side of the adhesive layer to the wafer and fixing the wafer with a dicing ring. As a result, the wafer is divided into a plurality of chips. Subsequently, after irradiating the pressure-sensitive adhesive layer with ultraviolet rays to weaken the adhesive force of the pressure-sensitive adhesive layer to the adhesive layer, the chip is picked up from the pressure-sensitive adhesive layer together with the adhesive piece formed by the individualized adhesive layer. After that, a semiconductor device is manufactured through a step of mounting a chip on a substrate or the like through an adhesive piece. In addition, a laminate comprising a chip obtained through a dicing process and an adhesive piece attached thereto is called a die attach film (DAF).

As described above, the pressure-sensitive adhesive layer (dicing film) whose adhesive strength is weakened by irradiation with ultraviolet rays is called a UV-curable type. On the other hand, in the manufacturing process of a semiconductor device, a pressure-sensitive adhesive layer without irradiation of ultraviolet rays and having a constant adhesive strength is called a pressure-sensitive type. The integrated dicing and die-bonding film provided with a pressure-sensitive adhesive layer has the advantage that users (mainly semiconductor device manufacturers) do not need to perform a process of irradiating ultraviolet rays, and no equipment is required for this. . Patent Literature 1 can be said to be a UV-curable type in that the pressure-sensitive adhesive layer contains a component that is cured by ultraviolet rays, while only a predetermined portion of the pressure-sensitive adhesive layer is irradiated with ultraviolet rays in advance, so that users can use ultraviolet rays in the semiconductor device manufacturing process. A dicing die-bonding film, which can also be referred to as a pressure-sensitive type, is disclosed from the point that it is not necessary to irradiate.

Patent Document 1: Japanese Patent Publication No. 44443962

The pressure-sensitive adhesive layer of the dicing die-bond integrated film is required to have high adhesion to the adhesive layer and the dicing ring in the dicing process. If the adhesive strength of the pressure-sensitive adhesive layer is insufficient, peeling occurs between the adhesive layer and the pressure-sensitive adhesive layer due to high-speed rotation of the dicing blade and the chip is blown together with the adhesive piece (hereinafter referred to as "DAF blown"), or, A phenomenon in which the dicing ring peels from the pressure-sensitive adhesive layer (hereinafter referred to as "ring peeling") occurs due to the flow of cutting water. The inventors of the present invention have noted that these phenomena become remarkable as the size of the chips to be produced by dicing decreases. The inventors of the present invention believe that, as the size of the chips decreases, dicing takes a long time compared to the conventional one, and the wafer during cutting and the chips after cutting are affected by the impact of the dicing blade and the number of cuttings. It is assumed that it is caused by exposure to over a long period of time.

Therefore, the present inventors can be applied to a process of dicing a wafer into a large number of small chips (area 9 mm ² or less), and a predetermined amount of active energy rays (e.g., ultraviolet rays) are previously irradiated to a specific portion. A dicing-die-bonding integral film was developed that has a pressure-sensitive adhesive layer in which the adhesive force of a portion is lower than that of other portions, and satisfies the following characteristics. That is, the area to which the dicing ring is affixed has a high adhesive force capable of withstanding the flow of cutting water in the dicing process, while the area to which a predetermined amount of active energy rays is previously irradiated is an external force caused by a dicing blade, etc. On the other hand, the inventors worked hard to develop an integrated dicing-die-bonding film having adhesive strength suitable for subsequent pickup.

The present disclosure can be applied to a process of dicing a wafer into a large number of small chips (area 9 mm ² or less), and it is possible to sufficiently suppress DAF flying in the dicing process, and a pressure-sensitive adhesive layer having excellent pick-up properties is provided. An object of the present invention is to provide a dicing-die-bonding integrated film and a method for producing the same. Moreover, the present disclosure aims to provide a method for manufacturing a semiconductor device using this dicing-die-bonding integrated film.

One aspect of the present disclosure relates to a method of manufacturing a semiconductor device. This manufacturing method includes a dicing comprising a base material layer, a pressure-sensitive adhesive layer having a first surface facing the base layer and a second surface opposite to the base layer, and an adhesive layer provided so as to cover the central portion of the second surface of the pressure-sensitive adhesive layer. The process of preparing a die-bonding integrated film, attaching the wafer to the adhesive layer of the dicing and die-bonding integrated film, and attaching a dicing ring to the second side of the adhesive layer, and the wafer area of 9 mm ² The following process of subdividing into a plurality of chips (dicing process), a process of picking up a chip from the pressure-sensitive adhesive layer together with an adhesive piece formed by the individualized adhesive layer, and a chip, a substrate or other chip through the adhesive piece Including a step of mounting on, the pressure-sensitive adhesive layer has a first region corresponding to a region in the adhesive layer to which a wafer is affixed, and a second region to which a dicing ring is affixed, and the first region is active energy Adhesion of the first region to the adhesive layer, measured under conditions of a peeling angle of 30° and a peeling speed of 60 mm/min at a temperature of 23° C., which is an area in which the adhesive strength is lowered compared to the second area by irradiation of the line This is 1.2N/25mm or more and 4.5N/25mm or less.

According to the semiconductor device manufacturing method, it is possible to sufficiently suppress the DAF fluttering in the dicing process, and to achieve excellent pick-up properties from the pressure-sensitive adhesive layer, thereby manufacturing a semiconductor device with a sufficiently high yield. I can.

One aspect of the present disclosure relates to a dicing-die-bonding integrated film. This film includes a base layer, an adhesive layer having a first surface facing the base layer and a second surface opposite to the base layer, and an adhesive layer provided so as to cover the central portion of the second surface, and the adhesive layer is an adhesive A first region including at least a region corresponding to the affixing position of the wafer in the layer and a second region positioned to surround the first region, the first region being a second region by irradiation of active energy rays The adhesive strength of the first region to the adhesive layer is 1.2N/25mm or more and 4.5N, measured under conditions of a peeling angle of 30° and a peeling rate of 60 mm/min at a temperature of 23°C. /25mm or less.

By using the dicing-die-bonding integrated film for the manufacture of a semiconductor device, it is possible to sufficiently suppress the DAF flutter in the dicing process, and to achieve excellent pick-up properties from the pressure-sensitive adhesive layer. A semiconductor device can be manufactured with a high yield.

From the viewpoint of suppressing ring peeling in the dicing step, the adhesive force of the second region in the pressure-sensitive adhesive layer to the stainless steel substrate is preferably 0.2 N/25 mm or more. This adhesive force means peel strength measured under conditions of a peeling angle of 90° and a peeling rate of 50 mm/min at a temperature of 23°C.

The first and second regions of the pressure-sensitive adhesive layer are made of the same composition, for example, before irradiation with active energy rays, and the first region is active in an amount of 10 to 1000 mJ/cm ² with respect to the region becoming the first region. It was formed through the process of irradiating energy rays.

One aspect of the present disclosure relates to a method of manufacturing the dicing-die-bonding integrated film. A first aspect of this manufacturing method is to prepare a laminate comprising a pressure-sensitive adhesive layer made of a composition whose adhesive strength decreases by irradiating an active energy ray on the surface of the substrate layer, and an adhesive layer formed on the surface of the pressure-sensitive adhesive layer. A step and a step of irradiating an active energy ray to a region serving as a first region of the pressure-sensitive adhesive layer included in the laminate is included in this order. On the other hand, in the second aspect of this manufacturing method, the step of forming a pressure-sensitive adhesive layer made of a composition whose adhesive strength is lowered by irradiation with active energy rays on the surface of the substrate layer, and active in the area serving as the first area of the pressure-sensitive adhesive layer. A step of irradiating an energy ray and a step of laminating an adhesive layer on the surface of the adhesive layer after irradiation with an active energy ray are included in this order.

According to the present disclosure, it can be applied to a process of dicing a wafer into a large number of small chips, and while being able to sufficiently suppress DAF flying in the dicing process, dicing with an adhesive layer having excellent pick-up properties. A die-bonding integral film is provided. Further, according to the present disclosure, a method for manufacturing a dicing-die-bonding integrated film, and a method for manufacturing a semiconductor device using the film are provided.

Fig. 1(a) is a plan view showing an embodiment of a dicing-die-bonding integrated film, and Fig. 1(b) is a schematic cross-sectional view taken along line BB shown in Fig. 1(a).
Fig. 2 is a schematic diagram showing a state in which a dicing ring is affixed to the periphery of the pressure-sensitive adhesive layer of the integrated dicing-die-bonding film and a wafer is affixed to the surface of the adhesive layer.
3 is a cross-sectional view schematically showing a state in which the 30° peel strength of the pressure-sensitive adhesive layer is measured with respect to the adhesive layer.
4 is a schematic cross-sectional view of an embodiment of a semiconductor device.
5(a) to 5(d) are cross-sectional views schematically showing a process of manufacturing a DAF (a stack of chips and adhesive pieces).
6 is a cross-sectional view schematically illustrating a process of manufacturing the semiconductor device shown in FIG. 4.
7 is a cross-sectional view schematically illustrating a process of manufacturing the semiconductor device shown in FIG. 4.
8 is a cross-sectional view schematically illustrating a process of manufacturing the semiconductor device shown in FIG. 4.

Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. In the following description, the same or equivalent portions are denoted by the same reference numerals, and overlapping descriptions are omitted. In addition, this invention is not limited to the following embodiment. In this specification, (meth)acrylic means acrylic or methacryl.

<Dicing-die bonding integrated film>

Fig. 1(a) is a plan view showing the dicing-die-bonding integrated film according to the present embodiment, and Fig. 1(b) is a schematic cross-sectional view taken along line BB in Fig. 1. The dicing die-bonding integrated film 10 (hereinafter, simply referred to as "film 10" in some cases) is a dicing process in which the wafer W is divided into a plurality of chips having an area of 9 mm ² or less, and It is applied to the manufacturing process of the semiconductor device including the subsequent pickup process (refer FIG. 5(c) and FIG. 5(d)).

The film 10 includes a base layer 1, a pressure-sensitive adhesive layer 3 having a first side F1 facing the base layer 1 and a second side F2 on the opposite side, and a pressure-sensitive adhesive layer ( An adhesive layer 5 provided to cover the central portion of the second surface F2 of 3) is provided in this order. In this embodiment, the aspect in which one laminated body of the adhesive layer 3 and the adhesive layer 5 was formed on the square base layer 1 was illustrated, but the base layer 1 has a predetermined length (for example, 100 m or more), and the laminated body of the adhesive layer 3 and the adhesive layer 5 may be arranged at predetermined intervals so as to be arranged in the longitudinal direction.

(Adhesive layer)

The adhesive layer 3 surrounds the first region 3a and the first region 3a including at least a region Rw corresponding to the affixing position of the wafer W in the adhesive layer 5 It has a second area 3b located. The broken lines in Figs. 1(a) and 1(b) indicate the boundary between the first area 3a and the second area 3b. The first region 3a and the second region 3b are made of the same composition before irradiation with active energy rays. The first region 3a is a region in a state in which the adhesive force is lowered compared to the second region 3b by irradiation with an active energy ray such as ultraviolet rays. The second region 3b is a region to which the dicing ring DR is affixed (see Fig. 2). The second region 3b is a region that is not irradiated with active energy rays, and has a high adhesive force to the dicing ring DR.

The adhesive force of the first region 3a to the adhesive layer 5 is 1.2N/25mm or more and 4.5N/25mm or less. This adhesive force is a 30° peel strength measured under the conditions of a peeling angle of 30° and a peeling rate of 60 mm/min at a temperature of 23°C. 3 is a cross-sectional view schematically showing a state in which the adhesive layer 5 of the measurement sample (25 mm wide x 100 mm long) is fixed to the support plate 80, and the 30° peel strength of the adhesive layer 3 is measured. . By setting the adhesive force (30° peel strength) of the first region 3a to the adhesive layer 5 in the above range, it is possible to sufficiently and highly achieve both suppression of DAF fluttering and excellent pick-up properties during dicing. Thereby, it becomes possible to manufacture a semiconductor device with a sufficiently high yield. The lower limit of this adhesive force may be 1.5N/25mm or 2.0N/25mm, and the upper limit may be 3.5N/25mm or 2.5N/25mm.

As described above, the film 10 is suitable for a dicing step in which a wafer is divided into a plurality of small chips having an area of 9 mm ² or less and a pickup step thereafter. The present inventors studied, noting that the pickup behavior of a small chip having a size of 3 mm × 3 mm or less (area 9 mm ² or less) and a large chip having a size of, for example, 8 mm × 6 mm, are different. The adhesive force of the first region 3a to the adhesive layer 5 was specified in the above range (1.2 N/25 mm or more and 4.5 N/25 mm or less). That is, in the case of picking up the counter chip by pushing the center of the counter chip up from the bottom with the pin of the lifting jig, if the 30° peel strength of the first region 3a to the adhesive layer 5 is within the above range, Accordingly, interfacial peeling between the adhesive layer and the adhesive piece proceeds from the edge portion of the DAF toward the center portion, but the adhesive force of the adhesive layer is too strong, so the interface peeling cannot catch up with the rise of the pin, and the chip is excessively deformed and cracked or Pickup misses are likely to occur. In other words, the present inventors found that the pick-up property of the counter chip is mainly dominated by the interface peeling between the pressure-sensitive adhesive layer and the adhesive piece, and that the adhesive force of the pressure-sensitive adhesive layer with respect to the adhesive layer should be set smaller than the lower limit of the above range (1.2 N/25 mm). On the other hand, the pick-up property of the small chip is mainly governed by the peeling of the edge portion of the DAF, and once the peeling of the edge portion occurs by pushing up by a pin, the interface peeling between the pressure-sensitive adhesive layer and the adhesive piece proceeds smoothly. The inventors found out. For this reason, even if the adhesive force of the 1st area|region 3a with respect to the adhesive layer 5 is comparatively strong, in the case of a small chip, excellent pick-up property can be achieved. In addition, since the adhesive force of the first region 3a to the adhesive layer 5 is relatively strong, it is possible to sufficiently suppress the DAF flying in the dicing step.

The first region 3a having the adhesive force within the above range with respect to the adhesive layer 5 is formed by irradiation of active energy rays. The present inventors have found that reducing the adhesive force of the pressure-sensitive adhesive layer by irradiation with active energy rays affects the peeling of the edge portion of the DAF. That is, if the adhesive force of the first region 3a is excessively decreased by irradiation with active energy rays, the 30° peel strength of the first region 3a with respect to the adhesive layer 5 decreases, while the pick-up target is small chip. In the case of, the edge portion of the DAF tends to be difficult to peel, and the chip is excessively deformed, and cracks or pick-up errors are liable to occur. It can be said that the adhesive force (1.2 N/25 mm or more and 4.5 N/25 mm or less) of the first region 3a to the adhesive layer 5 is not excessively lowering the adhesive force before irradiation with active energy rays, This makes it easier to cause peeling of the edge portion of the DAF even in small chips. In the present embodiment, for example, the adhesive strength of the first region 3a of the pressure-sensitive adhesive layer 3 can be adjusted by relatively reducing the amount of the crosslinking agent in the pressure-sensitive adhesive layer or reducing the amount of active energy ray irradiation.

It is preferable that the adhesion of the second region 3b to the stainless steel substrate is 0.2N/25mm or more. This adhesive force is a 90° peel strength measured under conditions of a peeling angle of 90° and a peeling rate of 50 mm/min at a temperature of 23°C. When this adhesive force is 0.2 N/25 mm or more, ring peeling in dicing can be sufficiently suppressed. The lower limit of this adhesive force may be 0.3N/25mm or 0.4N/25mm, and the upper limit may be, for example, 2.0N/25mm or 1.0N/25mm.

The pressure-sensitive adhesive layer before irradiation with active energy rays is made of, for example, a pressure-sensitive adhesive composition containing a (meth)acrylic resin, a photoinitiator, and a crosslinking agent. The second region 3b that is not irradiated with active energy rays has the same composition as the pressure-sensitive adhesive layer before irradiation with active energy rays. Hereinafter, the components contained in the pressure-sensitive adhesive composition will be described in detail.

[(Meth)acrylic resin]

It is preferable that the pressure-sensitive adhesive composition contains a (meth)acrylic resin having a functional group capable of chain polymerization, and that the functional group is at least one selected from an acryloyl group and a methacryloyl group. The content of the functional group in the pressure-sensitive adhesive layer before irradiation with active energy rays is, for example, 0.1 to 1.2 mmol/g, and may be 0.3 to 1.0 mmol/g or 0.5 to 0.8 mmol/g. When the content of the functional group is 0.1 mmol/g or more, it is easy to form a region (first region 3a) in which adhesive strength is appropriately lowered by irradiation with active energy rays, and on the other hand, it is 1.2 mmol/g or less, so that excellent pickup Easy to achieve

The (meth)acrylic resin can be obtained by synthesizing by a known method. As a synthesis method, a solution polymerization method, a suspension polymerization method, an emulsion polymerization method, a bulk polymerization method, a precipitation polymerization method, a gas phase polymerization method, a plasma polymerization method, and a supercritical polymerization method are exemplified. In addition, as the kind of polymerization reaction, in addition to radical polymerization, cationic polymerization, anionic polymerization, living radical polymerization, living cationic polymerization, living anionic polymerization, coordination polymerization, immortal polymerization, etc., ATRP (atomic transfer radical polymerization) and RAFT (reversible addition cleavage) Chain transfer polymerization). Among these, synthesizing by radical polymerization using a solution polymerization method has advantages such as good economy, high reaction rate, ease of polymerization control, and the like, and the like that the resin solution obtained by polymerization can be used as it is and blended.

Here, a method of obtaining a (meth)acrylic resin by radical polymerization using a solution polymerization method will be described in detail with respect to the synthesis method of the (meth)acrylic resin.

The monomer used when synthesizing the (meth)acrylic resin is not particularly limited as long as it has one (meth)acryloyl group per molecule. Specific examples thereof include methyl (meth) acrylate, ethyl (meth) acrylate, butyl (meth) acrylate, isobutyl (meth) acrylate, tert-butyl (meth) acrylate, butoxyethyl (meth) acrylate. , Isoamyl (meth)acrylate, hexyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, heptyl (meth)acrylate, octylheptyl (meth)acrylate, nonyl (meth)acrylate, decyl ( Meth)acrylate, undecyl(meth)acrylate, lauryl(meth)acrylate, tridecyl(meth)acrylate, tetradecyl(meth)acrylate, pentadecyl(meth)acrylate, hexadecyl(meth) Acrylate, stearyl (meth)acrylate, behenyl (meth)acrylate, methoxypolyethylene glycol (meth)acrylate, ethoxypolyethylene glycol (meth)acrylate, methoxypolypropylene glycol Aliphatic (meth)acrylates such as (meth)acrylate, ethoxypolypropylene glycol (meth)acrylate, and mono(2-(meth)acryloyloxyethyl)succinate; Cyclopentyl (meth)acrylate, cyclohexyl (meth)acrylate, cyclopentyl (meth)acrylate, dicyclopentanyl (meth)acrylate, dicyclopentenyl (meth)acrylate, isobornyl (meth) Alicyclic (meth)acrylates such as acrylate, mono(2-(meth)acryloyloxyethyl)tetrahydrophthalate, and mono(2-(meth)acryloyloxyethyl)hexahydrophthalate; Benzyl (meth)acrylate, phenyl (meth)acrylate, o-biphenyl (meth)acrylate, 1-naphthyl (meth)acrylate, 2-naphthyl (meth)acrylate, phenoxyethyl (meth) Acrylate, p-cumylphenoxyethyl (meth)acrylate, o-phenylphenoxyethyl (meth)acrylate, 1-naphthoxyethyl (meth)acrylate, 2-naphthoxyethyl (meth)acrylate, phenoxy Cypolyethylene glycol (meth)acrylate, nonylphenoxy polyethylene glycol (meth)acrylate, phenoxypolypropylene glycol (meth)acrylate, 2-hydroxy-3-phenoxypropyl (meth) Acrylate, 2-hydroxy-3-(o-phenylphenoxy)propyl(meth)acrylate, 2-hydroxy-3-(1-naphthoxy)propyl(meth)acrylate, 2-hydroxy-3 Aromatic (meth)acrylates such as -(2-naphthoxy)propyl (meth)acrylate; Heterocyclic formulas such as 2-tetrahydrofurfuryl (meth)acrylate, N-(meth)acryloyloxyethylhexahydrophthalimide, and 2-(meth)acryloyloxyethyl-N-carbazole (meth) )Acrylate, modified caprolactone thereof, ω-carboxy-polycaprolactone mono (meth)acrylate, glycidyl (meth)acrylate, α-ethylglycidyl (meth)acrylate, α-propylgly Cidyl (meth)acrylate, α-butylglycidyl (meth)acrylate, 2-methylglycidyl (meth)acrylate, 2-ethylglycidyl (meth)acrylate, 2-propylglycidyl (Meth)acrylate, 3,4-epoxybutyl (meth)acrylate, 3,4-epoxyheptyl (meth)acrylate, α-ethyl-6,7-epoxyheptyl (meth)acrylate, 3,4- Compounds having an ethylenic unsaturated group and an epoxy group such as epoxycyclohexylmethyl (meth)acrylate, o-vinylbenzyl glycidyl ether, m-vinylbenzyl glycidyl ether, and p-vinylbenzyl glycidyl ether; (2-ethyl-2-oxetanyl)methyl(meth)acrylate, (2-methyl-2-oxetanyl)methyl(meth)acrylate, 2-(2-ethyl-2-oxetanyl)ethyl (Meth)acrylate, 2-(2-methyl-2-oxetanyl)ethyl(meth)acrylate, 3-(2-ethyl-2-oxetanyl)propyl(meth)acrylate, 3-(2 Compounds having an ethylenic unsaturated group and an oxetanyl group such as methyl-2-oxetanyl)propyl (meth)acrylate; Compounds having an ethylenically unsaturated group and an isocyanate group such as 2-(meth)acryloyloxyethyl isocyanate; 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 3-chloro-2-hydroxypropyl (meth)acrylate, 2- And compounds having an ethylenically unsaturated group and a hydroxyl group such as hydroxybutyl (meth)acrylate, and the like, and the target (meth)acrylic resin can be obtained by appropriately combining them.

It is preferable that the (meth)acrylic resin has at least one functional group selected from a hydroxyl group, a glycidyl group, an amino group and the like as a reaction point with the functional group-introducing compound or crosslinking agent described later. As a monomer for synthesizing a (meth)acrylic resin having a hydroxyl group, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 3- And compounds having an ethylenically unsaturated group and a hydroxyl group, such as chloro-2-hydroxypropyl (meth)acrylate and 2-hydroxybutyl (meth)acrylate, and these are one type alone or two types The above can be used together.

As a monomer for synthesizing a (meth)acrylic resin having a glycidyl group, glycidyl (meth)acrylate, α-ethylglycidyl (meth)acrylate, α-propylglycidyl (meth)acrylate, α-butylglycidyl (meth)acrylate, 2-methylglycidyl (meth)acrylate, 2-ethylglycidyl (meth)acrylate, 2-propylglycidyl (meth)acrylate, 3, 4-epoxybutyl (meth)acrylate, 3,4-epoxyheptyl (meth)acrylate, α-ethyl-6,7-epoxyheptyl (meth)acrylate, 3,4-epoxycyclohexylmethyl (meth)acrylic And compounds having an ethylenically unsaturated group and an epoxy group, such as late, o-vinylbenzyl glycidyl ether, m-vinylbenzyl glycidyl ether, and p-vinylbenzyl glycidyl ether. Individually, or two or more types can be used in combination.

It is preferable that the (meth)acrylic resin synthesized from these monomers contains a functional group capable of chain polymerization. The functional group capable of chain polymerization is at least one selected from, for example, an acryloyl group and a methacryloyl group. The functional group capable of chain polymerization can be introduced into the (meth)acrylic resin, for example, by reacting the following compound (functional group introduction compound) with the (meth)acrylic resin synthesized as described above. As specific examples of the functional group introduction compound, 2-methacryloyloxyethyl isocyanate, meta-isopropenyl-α,α-dimethylbenzyl isocyanate, methacryloyl isocyanate, allyl iso Cyanate, 1,1-(bisacryloyloxymethyl)ethylisocyanate; Acryloyl monoisocyanate compound obtained by reaction of a diisocyanate compound or polyisocyanate compound and hydroxyethyl (meth)acrylate or 4-hydroxybutylethyl (meth)acrylate ; And acryloyl monoisocyanate compounds obtained by reaction of a diisocyanate compound or polyisocyanate compound, a polyol compound, and hydroxyethyl (meth)acrylate. Among these, 2-methacryloyloxyethyl isocyanate is particularly preferred. These compounds may be used alone or in combination of two or more.

[Photopolymerization initiator]

The photopolymerization initiator is not particularly limited as long as it generates an active species capable of chain polymerization by irradiation with active energy rays (at least one selected from ultraviolet rays, electron rays, and visible rays), and examples thereof include photoradical polymerization initiators. . Here, the active species capable of chain polymerization means that a polymerization reaction is started by reacting with a functional group capable of chain polymerization.

Examples of the photo radical polymerization initiator include benzoin ketals such as 2,2-dimethoxy-1,2-diphenylethan-1-one; 1-hydroxycyclohexylphenylketone, 2-hydroxy-2-methyl-1-phenylpropan-1-one, 1-[4-(2-hydroxyethoxy)phenyl]-2-hydroxy-2- Α-hydroxyketones such as methyl-1-propan-1-one; 2-Benzyl-2-dimethylamino-1-(4-morpholinophenyl)-butan-1-one, 1,2-methyl-1-[4-(methylthio)phenyl]-2-morpholin Α-amino ketones such as nopropan-1-one; Oxime esters such as 1-[4-(phenylthio)phenyl]-1,2-octadione-2-(benzoyl)oxime; Bis(2,4,6-trimethylbenzoyl)phenylphosphine oxide, bis(2,6-dimethoxybenzoyl)-2,4,4-trimethylpentylphosphine oxide, 2,4,6-trimethyl Phosphine oxides such as benzoyldiphenylphosphine oxide; 2-(o-chlorophenyl)-4,5-diphenylimidazole dimer, 2-(o-chlorophenyl)-4,5-di(methoxyphenyl)imidazole dimer, 2-(o- Fluorophenyl)-4,5-diphenylimidazole dimer, 2-(o-methoxyphenyl)-4,5-diphenylimidazole dimer, 2-(p-methoxyphenyl)-4 2,4,5-triarylimidazole dimers such as ,5-diphenylimidazole dimer; Benzophenone, N,N'-tetramethyl-4,4'-diaminobenzophenone, N,N'-tetraethyl-4,4'-diaminobenzophenone, 4-methoxy-4'-dimethylamino Benzophenone compounds such as benzophenone; 2-ethylanthraquinone, phenanthrenequinone, 2-tert-butylanthraquinone, octamethylanthraquinone, 1,2-benzanthraquinone, 2,3-benzanthraquinone, 2-phenylanthraquinone, 2,3-di Phenylanthraquinone, 1-chloroanthraquinone, 2-methylanthraquinone, 1,4-naphthoquinone, 9,10-phenanthraquinone, 2-methyl-1,4-naphthoquinone, 2,3-dimethyl Quinone compounds such as anthraquinone; Benzoin ethers such as benzoin methyl ether, benzoin ethyl ether, and benzoin phenyl ether; Benzoin compounds such as benzoin, methylbenzoin, and ethylbenzoin; Benzyl compounds such as benzyldimethylketal; Acridine compounds, such as 9-phenylacridine and 1,7-bis(9,9'-acridinylheptane): N-phenyl glycine and coumarin.

The content of the photopolymerization initiator in the pressure-sensitive adhesive composition is, for example, 0.1 to 30 parts by mass, preferably 0.3 to 10 parts by mass, more preferably 0.5 to 5 parts by mass, based on 100 parts by mass of the content of the (meth)acrylic resin. desirable. If the content of the photopolymerization initiator is less than 0.1 parts by mass, the pressure-sensitive adhesive layer becomes insufficiently cured after irradiation with active energy rays, and pickup failure is likely to occur. When the content of the photopolymerization initiator exceeds 30 parts by mass, contamination to the adhesive layer (transfer of the photopolymerization initiator to the adhesive layer) is likely to occur.

[Crosslinking agent]

The crosslinking agent is used, for example, for the purpose of controlling the elastic modulus and/or adhesiveness of the pressure-sensitive adhesive layer. The crosslinking agent may be a compound having two or more functional groups in one molecule capable of reacting with at least one functional group selected from a hydroxyl group, a glycidyl group, and an amino group of the (meth)acrylic resin. Examples of the bonds formed by the reaction of the crosslinking agent and the (meth)acrylic resin include ester bonds, ether bonds, amide bonds, imide bonds, uretain bonds, and urea bonds.

In this embodiment, as a crosslinking agent, it is preferable to employ a compound having two or more isocyanate groups per molecule. When such a compound is used, a strong crosslinked structure can be formed by easily reacting with a hydroxyl group, a glycidyl group, and an amino group of the (meth)acrylic resin.

Examples of compounds having two or more isocyanate groups in one molecule include 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, and 1,3-xylene diisocyanate , 1,4-xylenediisocyanate, diphenylmethane-4,4'-diisocyanate, diphenylmethane-2,4'-diisocyanate, 3-methyldiphenyl Methanediisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane-4,4'-diisocyanate, dicyclohexylmethane-2,4 And isocyanate compounds such as'-diisocyanate and lysine isocyanate.

As the crosslinking agent, a reaction product of the above-described isocyanate compound and a polyhydric alcohol having two or more OH groups per molecule (an isocyanate group-containing oligomer) may be employed. Examples of polyhydric alcohols having two or more OH groups in one molecule include ethylene glycol, propylene glycol, butylene glycol, 1,6-hexanediol, 1,8-octadiol, and 1,9 -Nonediol, 1,10-decanediol, 1,11-undecadiol, 1,12-dodecanediol, glycerin, pentaerythritol, dipentaerythritol, 1,4-cyclohex Sediol and 1,3-cyclohexanediol are mentioned.

Among these, as the crosslinking agent, a reaction product of a polyfunctional isocyanate having two or more isocyanate groups in one molecule and a polyhydric alcohol having three or more OH groups in one molecule (an isocyanate group-containing oligomer). More preferable. By using such an isocyanate group-containing oligomer as a crosslinking agent, the pressure-sensitive adhesive layer 3 forms a dense cross-linked structure, whereby it is possible to sufficiently suppress the adhesion of the pressure-sensitive adhesive to the adhesive layer 5 in the pickup process. .

The content of the crosslinking agent in the pressure-sensitive adhesive composition may be appropriately set depending on the cohesive force and elongation at break required for the pressure-sensitive adhesive layer, and adhesion to the adhesive layer 5, and the like. Specifically, the content of the crosslinking agent is, for example, 3 to 30 parts by mass, preferably 4 to 15 parts by mass, and more preferably 7 to 10 parts by mass per 100 parts by mass of the content of the (meth)acrylic resin. . By setting the content of the crosslinking agent in the above range, it is possible to balance the properties required for the pressure-sensitive adhesive layer in the dicing process and the properties required for the pressure-sensitive adhesive layer 3 in the die bonding process, and achieve excellent pick-up properties. can do.

When the content of the crosslinking agent is less than 3 parts by mass based on 100 parts by mass of the (meth)acrylic resin, the formation of the crosslinked structure is likely to be insufficient, and due to this, the interface with the adhesive layer 5 in the pickup step Since the adhesion is not sufficiently reduced, defects tend to occur during pickup. On the other hand, when the content of the crosslinking agent exceeds 30 parts by mass based on 100 parts by mass of the (meth)acrylic resin, the pressure-sensitive adhesive layer 3 is likely to become excessively hard, and due to this, the semiconductor chip is peeled off in the expand step. Easy to become

The content of the crosslinking agent relative to the total mass of the pressure-sensitive adhesive composition is, for example, 0.1 to 20 mass%, and may be 3 to 17 mass% or 5 to 15 mass%. When the content of the crosslinking agent is 0.1% by mass or more, it is easy to form a region (first region (3a)) in which the adhesive strength is appropriately lowered by irradiation with active energy rays, and on the other hand, it is 15% by mass or less, thereby achieving excellent pick-up properties. easy.

The thickness of the pressure-sensitive adhesive layer 3 may be appropriately set according to the conditions (temperature and tension, etc.) of the expansion process, for example, 1 to 200 μm, preferably 5 to 50 μm, and more preferably 10 to 20 μm. Do. When the thickness of the pressure-sensitive adhesive layer 3 is less than 1 μm, the adhesiveness tends to be insufficient, and when the thickness of the pressure-sensitive adhesive layer 3 exceeds 200 μm, the cuff width is narrow during expansion (the stress is relieved when the pin is pushed up), and pickup is likely to be insufficient.

The pressure-sensitive adhesive layer 3 is formed on the base layer 1. As a method of forming the pressure-sensitive adhesive layer 3, a known method can be employed. For example, a laminate of the substrate layer 1 and the pressure-sensitive adhesive layer 3 may be formed by a two-layer extrusion method, or a varnish for forming the pressure-sensitive adhesive layer 3 is prepared, and this is applied to the surface of the substrate layer 1 Alternatively, the pressure-sensitive adhesive layer 3 may be formed on the release-treated film and transferred to the substrate layer 1.

The varnish for formation of the pressure-sensitive adhesive layer 3 is an organic solvent capable of dissolving a (meth)acrylic resin, a photopolymerization initiator, and a crosslinking agent, and is preferably prepared using one that volatilizes by heating. Specific examples of the organic solvent include aromatic hydrocarbons such as toluene, xylene, mesitylene, cumene, and p-cymene; Cyclic ethers such as tetrahydrofuran and 1,4-dioxane; Alcohols such as methanol, ethanol, isopropanol, butanol, ethylene glycol, and propylene glycol; Ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, and 4-hydroxy-4-methyl-2-pentanone; Esters such as methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, and γ-butyrolactone; Carbonate esters such as ethylene carbonate and propylene carbonate; Ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, propylene glycol mono Methyl ether, propylene glycol monoethyl ether, propylene glycol dimethyl ether, propylene glycol diethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether , Polyhydric alcohol alkyl ethers such as diethylene glycol monobutyl ether, diethylene glycol dimethyl ether, and diethylene glycol diethyl ether; Ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether acetate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, Polyhydric alcohol alkyl ether acetates such as diethylene glycol monomethyl ether acetate and diethylene glycol monoethyl ether acetate; Amides, such as N,N-dimethylformamide, N,N-dimethylacetamide, and N-methylpyrrolidone, are mentioned.

Among these, from the viewpoint of solubility and boiling point, for example, toluene, methanol, ethanol, isopropanol, acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, methyl acetate, ethyl acetate, butyl acetate, ethylene glycol Monomethyl ether, ethylene glycol monoethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, diethylene glycol dimethyl ether, ethylene glycol monomethyl ether It is preferably acetate, propylene glycol monomethyl ether acetate, or N,N-dimethylacetamide. These organic solvents may be used individually by 1 type, and may use 2 or more types together. It is preferable that the solid content concentration of the varnish is usually 10 to 60 mass%.

(Substrate layer)

As the base material layer 1, a known polymer sheet or film can be used, and there is no particular limitation as long as it is capable of performing an expand process under low temperature conditions. Specifically, as the substrate layer 1, polyolefins such as crystalline polypropylene, amorphous polypropylene, high-density polyethylene, medium-density polyethylene, low-density polyethylene, ultra-low-density polyethylene, low-density linear polyethylene, polybutene, and polymethylpentene, Ethylene-vinyl acetate copolymer, ionomer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylic acid ester (random, alternating) copolymer, ethylene-butene copolymer, ethylene-hexene copolymer, polyurethane Polyester such as phosphorus, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyether ether ketone, polyimide, polyether imide, polyamide, wholly aromatic polyamide, polyphenyl sulfide, aramid (paper ), glass, glass cloth, fluororesin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, silicone resin, or a mixture of these with a plasticizer, or a cured product crosslinked by electron beam irradiation. have.

The base layer 1 has a surface mainly composed of at least one resin selected from polyethylene, polypropylene, a polyethylene-polypropylene random copolymer, and a polyethylene-polypropylene block copolymer, and the surface and the pressure-sensitive adhesive layer 3 ) Is preferably in contact. These resins are also good substrates from the viewpoints of characteristics such as Young's modulus, stress relaxation property, and melting point, and from the viewpoint of cost and recycling of waste materials after use. The base layer 1 may be a single layer, but may have a multilayer structure in which layers made of different materials are stacked if necessary. In order to control the adhesiveness with the pressure-sensitive adhesive layer 3, the surface of the substrate layer 1 may be subjected to a surface roughening treatment such as a mat treatment or a corona treatment.

(Adhesive layer)

To the adhesive layer 5, an adhesive composition constituting a previously known die-bonding film can be applied. Specifically, it is preferable that the adhesive composition constituting the adhesive layer 5 contains an epoxy group-containing acrylic copolymer, an epoxy resin, and an epoxy resin curing agent. According to the adhesive layer 5 containing these components, it has excellent adhesion between chips/substrates and between chips/chips, and can also impart electrode embedding properties and wire embedding properties, and can be bonded at low temperatures in the die bonding process. It is preferable because it has features such as excellent curing in a short time, and excellent reliability after molding with a sealant.

Examples of the epoxy resin include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, alicyclic epoxy resin, aliphatic chain epoxy resin, phenol novolak type epoxy resin, cresol novolak type epoxy resin, bisphenol. A Novolac-type epoxy resin, diglycidyl ether product of biphenol, diglycidyl ether product of naphthalenediol, diglycidyl ether product of phenol, diglycidyl ether product of alcohols , And difunctional epoxy resins such as alkyl substituents, halides, and hydrogenated substances thereof, and novolac-type epoxy resins. Moreover, other generally known epoxy resins, such as a polyfunctional epoxy resin and a heterocycle-containing epoxy resin, may be applied. These can be used alone or in combination of two or more. Further, components other than the epoxy resin may be contained as impurities within a range that does not impair the properties.

Examples of the epoxy resin curing agent include, for example, a phenolic resin obtained by reacting a phenol compound and a xylylene compound as a divalent linking group in the presence of a catalyst or an acid catalyst. As a phenolic compound used in the manufacture of a phenol resin, phenol, o-cresol, m-cresol, p-cresol, o-ethylphenol, p-ethylphenol, on-propylphenol, mn-propylphenol, pn-propylphenol, o-isopropylphenol, m-isopropylphenol, p-isopropylphenol, on-butylphenol, mn-butylphenol, pn-butylphenol, o-isobutylphenol, m-isobutylphenol, p-isobutylphenol , Octylphenol, nonylphenol, 2,4-xyleneol, 2,6-xyleneol, 3,5-xyleneol, 2,4,6-trimethylphenol, resorcin, catechol, hydroquinone, 4-me Toxicphenol, o-phenylphenol, m-phenylphenol, p-phenylphenol, p-cyclohexylphenol, o-allylphenol, p-allylphenol, o-benzylphenol, p-benzylphenol, o-chlorophenol, p -Chlorophenol, o-bromophenol, p-bromophenol, o-iodophenol, p-iodophenol, o-fluorophenol, m-fluorophenol, p-fluorophenol, etc. are illustrated. These phenolic compounds may be used alone or in combination of two or more. As the xylylene compound, which is a divalent linking group used in the production of a phenol resin, xylylenedihalide, xylylenediglycol and derivatives thereof shown below can be used. That is, α,α'-dichloro-p-xylene, α,α'-dichloro-m-xylene, α,α'-dichloro-o-xylene, α,α'-dibromo-p -Xylene, α,α'-dibromo-m-xylene, α,α'-dibromo-o-xylene, α,α'-diiodo-p-xylene, α,α'-dia Iodo-m-xylene, α,α'-diiodo-o-xylene, α,α'-dihydroxy-p-xylene, α,α'-dihydroxy-m-xylene, α,α'-dihydroxy-o-xylene, α,α'-dimethoxy-p-xylene, α,α'-dimethoxy-m-xylene, α,α'-dimethoxy -o-xylene, α,α'-diethoxy-p-xylene, α,α'-diethoxy-m-xylene, α,α'-diethoxy-o-xylene, α, α'-di-n-propoxy-p-xylene, α,α'-di-n-propoxy-m-xylene, α,α'-di-n-propoxy-o-xylene, α ,α'-di-isopropoxy-p-xylene, α,α'-diisopropoxy-m-xylene, α,α'-diisopropoxy-o-xylene, α,α'- Di-n-butoxy-p-xylene, α,α'-di-n-butoxy-m-xylene, α,α'-di-n-butoxy-o-xylene, α,α' -Diisobutoxy-p-xylene, α,α'-diisobutoxy-m-xylene, α,α'-diisobutoxy-o-xylene, α,α'-di-tert- Butoxy-p-xylene, α,α'-di-tert-butoxy-m-xylene, and α,α'-di-tert-butoxy-o-xylene. These can be used alone or in combination of two or more.

When making the above-described phenol compound and xylylene compound react, mineral acids such as hydrochloric acid, sulfuric acid, phosphoric acid, and polyphosphoric acid; Organic carboxylic acids such as dimethyl sulfuric acid, diethyl sulfuric acid, p-toluenesulfonic acid, methanesulfonic acid, and ethanesulfonic acid; Super strong acids such as trifluoromethanesulfonic acid; Strongly acidic ion exchange resins such as an alkane sulfonic acid type ion exchange resin; Super strong acidic ion exchange resins such as perfluoroalkane sulfonic acid type ion exchange resins (trade name: Nafion, Nafion, manufactured by Du Pont, "Nafion" is a registered trademark); Natural and synthetic zeolites; It is obtained by using an acidic catalyst such as activated clay (acid clay), and reacting at 50 to 250°C until the xylylene compound as a raw material disappears substantially and the reaction composition becomes constant. The reaction time varies depending on the raw material and the reaction temperature, but is usually about 1 hour to 15 hours, and in reality, it may be determined while tracking the reaction composition by GPC (gel permeation chromatography) or the like.

The epoxy group-containing acrylic copolymer is preferably a copolymer obtained by using glycidyl acrylate or glycidyl methacrylate as a raw material in an amount of 0.5 to 6 mass% based on the obtained copolymer. When this amount is 0.5% by mass or more, high adhesive strength can be easily obtained, while when it is 6% by mass or less, gelation can be suppressed. The remainder may be an alkyl acrylate having an alkyl group having 1 to 8 carbon atoms such as methyl acrylate and methyl methacrylate, an alkyl methacrylate, and a mixture of styrene and acrylonitrile. Among these, ethyl (meth)acrylate and/or butyl (meth)acrylate are particularly preferred. It is preferable to adjust the mixing ratio in consideration of the Tg of the copolymer. When Tg is less than -10°C, the tackability of the adhesive layer 5 in the B-stage state tends to increase, and the handling properties tend to deteriorate. In addition, the upper limit of the glass transition point (Tg) of the epoxy group-containing acrylic copolymer is, for example, 30°C. The polymerization method is not particularly limited, and examples thereof include pearl polymerization and solution polymerization. As a commercially available epoxy group-containing acrylic copolymer, HTR-860P-3 (brand name, Nagase Chemtex Co., Ltd. product) is mentioned, for example.

The weight average molecular weight of the epoxy group-containing acrylic copolymer is 100,000 or more, and if it is within this range, adhesiveness and heat resistance are high, it is preferably 300,000 to 3 million, more preferably 500,000 to 2 million. When the weight average molecular weight is 3 million or less, it is possible to suppress a decrease in filling properties between the semiconductor chip and the substrate supporting the semiconductor chip. The weight average molecular weight is a polystyrene conversion value using a calibration curve using standard polystyrene in the gel permeation chromatography (GPC) method.

The adhesive layer 5 may further contain a curing accelerator such as tertiary amines, imidazoles, and quaternary ammonium salts as necessary. As specific examples of the curing accelerator, 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-phenylimidazolium tri Melitate is mentioned. These may be used individually by 1 type, and may use 2 or more types together.

The adhesive layer 5 may further contain an inorganic filler as necessary. Specific examples of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica, amorphous silica. I can. These may be used individually by 1 type, and may use 2 or more types together.

The thickness of the adhesive layer 5 is, for example, 1 to 300 μm, preferably 5 to 150 μm, and more preferably 10 to 100 μm. When the thickness of the adhesive layer 5 is less than 1 μm, the adhesiveness tends to be insufficient, whereas when the thickness of the adhesive layer 5 exceeds 300 μm, the splitting property and pick-up property at the time of expansion tend to be insufficient.

Moreover, the adhesive layer 5 may be an aspect which does not contain a thermosetting resin. For example, when the adhesive layer 5 contains a reactive group-containing (meth)acrylic copolymer, the adhesive layer 5 includes a reactive group-containing (meth)acrylic copolymer, a curing accelerator, and a filler. (See Example 4).

<Method of manufacturing integrated dicing and die-bonding film>

The manufacturing method of the film 10 includes a pressure-sensitive adhesive layer made of a pressure-sensitive adhesive composition that decreases adhesive strength by irradiating an active energy ray on the surface of the substrate layer 1, and an adhesive layer 5 formed on the surface of the pressure-sensitive adhesive layer. A step of producing a laminate to be included and a step of irradiating an active energy ray to a region serving as the first region 3a of the pressure-sensitive adhesive layer included in the laminate is included in this order. The irradiation amount of the active energy ray to the region serving as the first region 3a is, for example, 10 to 1000 mJ/cm ² , and may be 100 to 700 mJ/cm ² or 200 to 500 mJ/cm ² .

In the above manufacturing method, a laminate of the pressure-sensitive adhesive layer and the adhesive layer 5 is first produced, and then, an active energy ray is irradiated to a specific region of the pressure-sensitive adhesive layer. In the following manner, the first region 3a may be formed by irradiating an active energy ray on the pressure-sensitive adhesive layer before bonding with the adhesive layer 5. That is, the manufacturing method of the film 10 includes a step of forming a pressure-sensitive adhesive layer made of a composition that decreases adhesive strength by irradiating an active energy ray on the surface of the substrate layer 1, and the first region 3a of the pressure-sensitive adhesive layer. A step of irradiating an active energy ray to the region to be) and a step of laminating the adhesive layer 5 on the surface of the adhesive layer 3 after irradiating the active energy ray may be included in this order.

<Semiconductor device and its manufacturing method>

4 is a cross-sectional view schematically showing the semiconductor device according to the present embodiment. The semiconductor device 100 shown in this figure includes a substrate 70, four chips S1, S2, S3, S4 stacked on the surface of the substrate 70, and electrodes on the surface of the substrate 70 ( (Not shown) and the wires W1, W2, W3, W4 electrically connecting the four chips S1, S2, S3, S4, and a sealing layer 50 sealing them.

The substrate 70 is, for example, an organic substrate, and may be a metal substrate such as a lead frame. From the viewpoint of suppressing the warpage of the semiconductor device 100, the substrate 70 may have a thickness of, for example, 70 to 140 μm, or 80 to 100 μm.

The four chips S1, S2, S3, and S4 are laminated through the cured product 5C of the adhesive piece 5P. The shape of the chips S1, S2, S3 and S4 in plan view is, for example, a square or a rectangle. Chip area (S1, S2, S3, S4 ) is less than 9mm ^2, or may be ² 0.1 ~ 4mm ² or 0.1 ~ 2mm. The length of one side of the chips S1, S2, S3, S4 is, for example, 3 mm or less, and may be 0.1 to 2.0 mm or 0.1 to 1.0 mm. The thickness of the chips S1, S2, S3, S4 is, for example, 10 to 170 μm, and may be 25 to 100 μm. In addition, the length of one side of the four chips S1, S2, S3, S4 may be the same, may be different from each other, and the thickness is the same.

The manufacturing method of the semiconductor device 100 includes the steps of preparing the film 10 described above, attaching the wafer W to the adhesive layer 5 of the film 10, and manufacturing the pressure-sensitive adhesive layer 3 The process of attaching the dicing ring DR to the two sides F2, the process of dividing the wafer W into a plurality of chips S having an area of 9 mm ² or less (dicing process), and the DAF 8 A step of picking up (a laminated body of the chip S1 and the adhesive piece 5P, see Fig. 5(d)) from the first region 3a of the pressure-sensitive adhesive layer 3, and the chip through the adhesive piece 5P. (S1) includes a step of mounting on the substrate 70.

An example of a method of manufacturing the DAF 8 will be described with reference to FIGS. 5A to 5D. First, the above-described film 10 is prepared. 5(a) and 5(b), the film 10 is affixed so that the adhesive layer 5 may contact one surface of the wafer W. Further, the dicing ring DR is affixed to the second surface F2 of the pressure-sensitive adhesive layer 3.

The wafer W, the adhesive layer 5 and the adhesive layer 3 are diced. Thereby, as shown in FIG. 5(c), the wafer W is divided into pieces and becomes the chip S. The adhesive layer 5 is also divided into pieces to become an adhesive piece 5P. As a dicing method, a method using a dicing blade or a laser can be mentioned. Further, prior to dicing the wafer W, the wafer W may be ground to form a thin film.

After dicing, the pressure-sensitive adhesive layer 3 is not irradiated with active energy rays, and as shown in Fig. 5(d), the chips S are mutually extended by expanding the base layer 1 under room temperature or cooling conditions. While being separated, the adhesive piece 5P is peeled from the adhesive layer 3 by pushing up with the pin 42, and the DAF 8 is sucked by the suction collet 44 and picked up.

A method of manufacturing the semiconductor device 100 will be described in detail with reference to FIGS. 6 to 8. First, as shown in FIG. 6, the first-stage chip S1 (chip S) is pressed into a predetermined position on the substrate 70 via the adhesive piece 5P. Next, the adhesive piece 5P is hardened by heating. Thereby, the adhesive piece 5P hardens and becomes the hardened|cured material 5C. The curing treatment of the adhesive piece 5P may be performed in a pressurized atmosphere from the viewpoint of reducing voids.

In the same manner as the mounting of the chip S1 to the substrate 70, the second-stage chip S2 is mounted on the surface of the chip S1. Further, the structure 60 shown in Fig. 7 is fabricated by mounting the third and fourth stages of the chips S3 and S4. After electrically connecting the chip (S1, S2, S3, S4) and the substrate 70 with wires (W1, W2, W3, W4) (see Fig. 8), the semiconductor element and the wire are separated by the sealing layer 50. By sealing, the semiconductor device 100 shown in FIG. 4 is completed.

As mentioned above, although the embodiment of this disclosure was demonstrated in detail, this invention is not limited to the said embodiment. For example, in the above embodiment, the film 10 provided with the base layer 1, the adhesive layer 3, and the adhesive layer 5 in this order was illustrated, but the adhesive layer 5 was provided. It may be a mode that does not. Moreover, the film 10 may further include a cover film (not shown) covering the adhesive layer 5.

Example

Hereinafter, the present disclosure will be described in more detail based on Examples, but the present invention is not limited to these Examples. In addition, unless otherwise specified, reagents were used for all drugs.

<Example 1>

[Synthesis of acrylic resin (Production Example 1)]

The following components were placed in a 2000 ml flask equipped with a three-one motor, a stirring blade, and a nitrogen introduction tube.

Ethyl acetate (solvent): 635 g

2-ethylhexyl acrylate: 395 g

-2-hydroxyethyl acrylate: 100 g

Methacrylic acid: 5g

Azobis isobutyronitrile: 0.08g

After stirring the content until it became sufficiently uniform, it was bubbled at a flow rate of 500 ml/min for 60 minutes to degas dissolved oxygen in the system. The temperature was raised to 78°C for 1 hour, and polymerization was performed for 6 hours after the temperature was raised. Next, the reaction solution was transferred to a pressure cooker having a capacity of 2000 ml equipped with a three-one motor, a stirring blade, and a nitrogen introduction tube, heated at 120° C. and 0.28 MPa for 4.5 hours, and then cooled to room temperature (25° C., the same hereinafter).

Next, 490 g of ethyl acetate was added, stirred, and diluted. After adding 0.025 g of metoquinone as a polymerization inhibitor and 0.10 g of dioctyl tin dilaurate as a catalyst for urethanization, 2-methacryloxyethyl isocyanate (manufactured by Showa Denko Corporation, Karens MOI (Brand name)) 42.5g was added, and after making it react at 70 degreeC for 6 hours, it cooled to room temperature. Next, ethyl acetate was added, and it adjusted so that the nonvolatile content content in an acrylic resin solution might be 35 mass %, and the solution containing the (A) acrylic resin (production example 1) which has a functional group capable of chain polymerization was obtained.

The solution containing the acrylic resin (A) obtained as described above was vacuum dried at 60°C overnight. The solid content thus obtained was elementally analyzed with a fully automatic elemental analyzer (manufactured by Elementa, brand name: varioEL), and the content of the introduced 2-methacryloxyethyl isocyanate was calculated from the nitrogen content, and it was 0.50 mmol/g.

Moreover, the weight average molecular weight in terms of polystyrene of (A) acrylic resin was calculated|required using the following apparatus. That is, SD-8022/DP-8020/RI-8020 manufactured by Tosoh Corporation was used, Gelpack GL-A150-S/GL-A160-S manufactured by Hitachi Kasei Corporation was used as a column, and tetrahydrofuran was used as an eluent. Then, GPC measurement was performed. As a result, the weight average molecular weight in terms of polystyrene was 800,000. The hydroxyl value and acid value measured in accordance with the method described in JIS K0070 were 61.1 mgKOH/g and 6.5 mgKOH/g. These results are put together in Table 1 and shown.

[Production of dicing film (adhesive layer)]

By mixing the following components, a varnish for forming an adhesive layer was prepared (see Table 2). The amount of ethyl acetate (solvent) was adjusted so that the total solid content of the varnish was 25% by mass.

(A) Acrylic resin solution (Production Example 1): 100 g (solid content)

(B) Photoinitiator (1-hydroxycyclohexylphenyl ketone, manufactured by Ciba Specialty Chemicals, Inc., Irgacure 184, "Irgacure" is a registered trademark): 0.8 g

(B) Photoinitiator (bis(2,4,6-trimethylbenzoyl)-phenylphosphine oxide, manufactured by Ciba Specialty Chemicals Co., Ltd., Irgacure 819, "Irgacure" is a registered trademark): 0.2 g

(C) Crosslinking agent (polyfunctional isocyanate, manufactured by Nippon Polyuretein Kogyo Co., Ltd., Colonate L, solid content: 75%): 8.0 g (solid content)

・Ethyl acetate (solvent)

A polyethylene terephthalate film (450 mm in width, 500 mm in length, 38 μm in thickness) subjected to a release treatment on one side was prepared. After applying the varnish for forming a pressure-sensitive adhesive layer to the surface subjected to the release treatment using an applicator, it was dried at 80°C for 5 minutes. Thereby, a laminate (dicing film) comprising a polyethylene terephthalate film and an adhesive layer having a thickness of 30 μm formed thereon was obtained.

A polyolefin film (450 mm wide, 500 mm long, 80 μm thick) subjected to corona treatment on one side was prepared. The surface subjected to the corona treatment and the adhesive layer of the laminate were bonded at room temperature. Next, the pressure-sensitive adhesive layer was transferred to a polyolefin film (cover film) by pressing with a rubber roll. After that, the dicing film with a cover film was obtained by leaving it for 3 days at room temperature.

[Production of die-bonding film (adhesive layer A)]

First, cyclohexanone (solvent) was added to the following composition and mixed with stirring, and then further kneaded for 90 minutes using a bead mill.

Epoxy resin (YDCN-700-10 (brand name), cresol novolak type epoxy resin manufactured by Shinnittetsu Sumikin Chemical Co., Ltd., epoxy equivalent 210, molecular weight 1200, softening point 80°C): 14 parts by mass, phenol resin (Millex XLC- LL (brand name), Mitsui Chemical Co., Ltd. product, phenol resin, hydroxyl equivalent weight 175, water absorption rate 1.8%, heating weight reduction rate at 350°C 4%): 23 parts by mass

Silane coupling agent (NUC A-189 (trade name) manufactured by NUC, γ-mercaptopropyltrimethoxysilane): 0.2 parts by mass

Silane coupling agent (NUCA-1160 (trade name), manufactured by Unica Co., Ltd., γ-ureidopropyltriethoxysilane): 0.1 parts by mass

Filler (SC2050-HLG (brand name), Admatex Co., Ltd., silica, average particle diameter 0.500 μm): 32 parts by mass

After adding the following components to the composition obtained as described above, a varnish for forming an adhesive layer was obtained through the steps of stirring and mixing and vacuum degassing.

Acrylic copolymer containing an epoxy group (HTR-860P-3 (brand name), Nagase Chemtex Co., Ltd. product, weight average molecular weight of 800,000): 16 parts by mass

-Curing accelerator (Curesol 2PZ-CN (trade name), Shikoku Kasei Kogyo Co., Ltd. product, 1-cyanoethyl-2-phenylimidazole, "Curesol" is a registered trademark) 0.0.1 parts by mass

A polyethylene terephthalate film (35 μm in thickness) subjected to a release treatment on one side was prepared. After applying the varnish for forming an adhesive layer to the surface subjected to the release treatment using an applicator, it was heated and dried at 140°C for 5 minutes. Thereby, a laminate (die-bonding film) comprising a polyethylene terephthalate film (carrier film) and an adhesive layer having a thickness of 20 μm (B-stage state) formed thereon was obtained.

[Production of dicing-die bonding integrated film]

The die-bonding film composed of the adhesive layer and the carrier film was cut into a circle having a diameter of 335 mm for the carrier film. Here, the dicing film from which the polyethylene terephthalate film was peeled was affixed at room temperature, and then left at room temperature for 1 day. After that, the dicing film was cut into a circle having a diameter of 370 mm. In the adhesive layer of the thus obtained dicing-die-bonding integrated film, an ultraviolet ray was irradiated to the region (the first region of the adhesive layer) corresponding to the affixing position of the wafer in the adhesive layer. That is, using a pulsed xenon lamp, ultraviolet rays were partially irradiated at an irradiation amount of 70 W and 150 mJ/cm ² . In addition, ultraviolet rays were irradiated from the center of the film to a portion having an inner diameter of 318 mm using a black film. In this way, a plurality of dicing-die-bonding integrated films for use in various evaluation tests described later were obtained.

<Example 2>

The irradiation dose of ultraviolet rays instead of to 150mJ / cm ^2, in the same manner as in Example 1 except that to 300mJ / cm ^2, to obtain a plurality of the dicing die-bonding film integrally.

<Example 3>

The irradiation dose of ultraviolet rays instead of to 150mJ / cm ^2, in the same manner as in Example 1 except that to 500mJ / cm ^2, to obtain a plurality of the dicing die-bonding film integrally.

<Example 4>

As the die-bonding film, instead of having the adhesive layer A, a plurality of dicing-die-bonding integrated films were obtained in the same manner as in Example 1, except that the one having the adhesive layer B formed as follows was used.

[Production of die-bonding film (adhesive layer B)]

First, cyclohexanone (solvent) was added to the following components, followed by stirring and mixing, followed by further kneading for 90 minutes using a bead mill.

Filler (SC2050-HLG (brand name), Admatex Co., Ltd., silica, average particle diameter 0.500 μm): 50 parts by mass

After adding the following components to the composition obtained as described above, a varnish for forming an adhesive layer was obtained through the steps of stirring and mixing and vacuum degassing.

Acrylic copolymer containing an epoxy group (HTR-860P-3 (brand name), Nagase Chemtex Co., Ltd. product, weight average molecular weight of 800,000): 100 parts by mass

-Curing accelerator (Curesol 2PZ-CN (brand name), Shikoku Kasei Kogyo Co., Ltd. product, 1-cyanoethyl-2-phenylimidazole, and "Curesol" is a registered trademark) 0.1 parts by mass

<Example 5>

Instead of the raw material monomer composition shown in Production Example 1 in Table 1, the raw material monomer composition shown in Production Example 2 was used, and a solution of (A) acrylic resin according to Production Example 2 produced by the same method as in Production Example 1 was obtained. Except having used this solution, it carried out similarly to Example 2, and obtained the several dicing-die-bonding integrated film.

<Example 6>

And that the amount of the crosslinking agent in the pressure-sensitive adhesive layer in place of part 8.0 parts by mass of a radiation amount of ultraviolet light, with a box part 4.0 parts by mass in place of 500mJ / cm ² in which 300mJ / cm ^2, except in the same manner as in Example 5, A plurality of dicing and die-bonding integrated films were obtained.

<Example 7>

In place of the raw material monomer composition shown in Production Example 1 in Table 1, the raw material monomer composition shown in Production Example 3 was used, and a solution of (A) acrylic resin according to Production Example 3 produced by the same method as in Production Example 1 was obtained. Except having used this solution, it carried out similarly to Example 2, and obtained the several dicing-die-bonding integrated film.

<Example 8>

Instead of the raw material monomer composition shown in Production Example 1 in Table 1, the raw material monomer composition shown in Production Example 4 was used, and a solution of (A) acrylic resin according to Production Example 4 produced by the same method as in Production Example 1 was obtained. Except having used this solution, it carried out similarly to Example 3, and obtained the several dicing-die-bonding integrated film.

<Comparative Example 1>

A plurality of dicing-die-bonding integrated films were obtained in the same manner as in Example 1 except that the amount of the crosslinking agent in the pressure-sensitive adhesive layer was 15.0 parts by mass instead of 8.0 parts by mass.

<Comparative Example 2>

Instead of the irradiation amount of ultraviolet rays to 300mJ / cm ^2, except that to 500mJ / cm ² in the same manner as in Example 5, to obtain a plurality of the dicing die-bonding film integrally.

<Comparative Example 3>

Instead of the irradiation amount of ultraviolet rays to 500mJ / cm ^2, except that to 150mJ / cm ² in the same manner as in Example 8, to obtain a plurality of the dicing die-bonding film integrally.

<Comparative Example 4>

Instead of the raw material monomer composition shown in Production Example 1 in Table 1, the raw material monomer composition shown in Production Example 5 was used, and a solution of (A) acrylic resin according to Production Example 5 produced by the same method as in Production Example 1 was obtained. While using this solution, a plurality of dicing-die-bonding integrated films were obtained in the same manner as in Example 1 except that ultraviolet rays were not irradiated.

[Evaluation test]

(1) Measurement of the adhesive strength (30° peel strength) of the adhesive layer to the adhesive layer

The adhesive force of the pressure-sensitive adhesive layer (ultraviolet irradiation area) to the adhesive layer was evaluated by measuring the 30° peel strength. That is, a measurement sample having a width of 25 mm and a length of 100 mm was cut out from the integrated dicing and die-bonding film. The measurement sample was made into a laminate of an adhesive layer (ultraviolet irradiation area) and an adhesive layer. The peel strength of the pressure-sensitive adhesive layer (ultraviolet irradiation area) with respect to the adhesive layer was measured using a tensile tester. Measurement conditions were a peeling angle of 30 degrees and a tensile speed of 60 mm/min. In addition, storage of the sample and measurement of peel strength were performed in an environment at a temperature of 23°C and a relative humidity of 40%.

(2) Measurement of the 15° peel strength of the adhesive layer against the adhesive layer

The peeling strength was measured at 15° in the same manner as the 30° peeling strength, except that the peeling angle was set to 15° and the tensile speed was set to 150 mm/min (2.5 mm/s). In addition, this measurement condition is the same as the condition described in claim 1 of Patent Document 1.

(3) Measurement of adhesion (90° peel strength) of the pressure-sensitive adhesive layer to the stainless steel substrate

The adhesion of the pressure-sensitive adhesive layer (non-ultraviolet irradiation area) to the stainless steel substrate was evaluated by measuring the 90° peel strength. That is, a measurement sample having a width of 25 mm and a length of 100 mm was cut out from the integrated dicing and die-bonding film. The measurement sample was made into a laminate of an adhesive layer (non-ultraviolet irradiation area) and an adhesive layer. After affixing the side of the pressure-sensitive adhesive layer of the sample to a stainless steel substrate (SUS430BA), the peel strength of the pressure-sensitive adhesive layer (non-ultraviolet irradiation area) on the stainless steel substrate was measured using an autograph "AGS-1000" manufactured by Shimadzu Corporation. did. Measurement conditions were 90 degrees of peeling angle and 50 mm/min of peeling speed.

(4) Evaluation of dicing properties

The dicing-die-bonding integrated film was bonded to a wafer (diameter: 8 inches, thickness: 50 μm) under conditions of 80°C x 10 seconds. After that, the wafer was diced under the following conditions.

<Dicing conditions>

Dicer: manufactured by DISCO, DFD-651

Blade: DISCO, 27HECC

Blade rotation speed: 40000rpm

Dicing speed: 30mm/sec

Dicing depth: 25μm

Cut mode: down cut

Dicing size: 1.0mm×1.0mm

(Evaluation of peeling of the adhesive piece from the adhesive layer)

At the time of dicing, it was confirmed whether or not peeling of the adhesive piece from the adhesive layer occurred. While dicing one wafer, the sample in which the peeling and peeling of the laminated body was not confirmed is evaluated as "A", and the peeling or peeling of the laminated body was confirmed as "B". Evaluated.

(Evaluation of peeling of chips from the adhesive layer)

At the time of dicing, it was confirmed whether or not peeling of the chip from the adhesive layer occurred. While dicing a single wafer, a sample in which no chip fluttering occurred was evaluated as "A", and a sample in which chip fluttering occurred even once was evaluated as "B".

(crack)

The cut cross section of the chip after dicing was confirmed with a microscope, and it evaluated whether or not a chip|strip had occurred. The cut section of 25 chips was observed, and a sample in which no missing was observed was evaluated as "A", and a sample in which even a little missing was observed was evaluated as "B".

(Regarding the presence or absence of ring peeling)

Visual evaluation was made as to whether or not a phenomenon in which the dicing ring peeled from the pressure-sensitive adhesive layer (ring peeling) occurred during dicing. A sample in which no ring peeling occurred was evaluated as "A", and a sample in which ring peeling occurred was evaluated as "B".

(5) Evaluation of pickup properties

The pick-up property of the chip after the dicing step was evaluated using a flexible die bonder "DB-730" manufactured by Renesas Higashi Nihon Semiconductor Corporation. As the collet for pickup, "RUBBER TIP 13-087E-33 (size: 1×1mm)" manufactured by Micromechanics is used, and "EJECTOR NEEDLE SEN2-83-05" manufactured by Micromechanics is used as the push pin. Diameter: 0.7 mm, tip shape: a semicircle with a diameter of 350 μm)" was used. One push pin was arranged in the center. Pickup properties were evaluated under the conditions of a pin pushing speed at the time of pickup: 10 mm/sec and a pushing height: 75 μm. A case in which 100 chips were successively picked up and no chip cracking or pick-up miss, etc. occurred was evaluated as "A", and a case where chip cracking or pick-up miss occurred in even one chip was judged as "B". In addition, about the sample in which ring peeling occurred at the time of dicing, an integral sample was produced again, and after dicing was performed by reinforcing the ring contact part with an adhesive tape, evaluation was performed.

[Table 1]

[Table 2]

[Table 3]

Industrial availability

According to the present disclosure, it can be applied to a process of dicing a wafer into a large number of small chips, and while being able to sufficiently suppress DAF flying in the dicing process, dicing with an adhesive layer having excellent pick-up properties. A die-bonding integral film is provided. Further, according to the present disclosure, a method for manufacturing a dicing-die-bonding integrated film, and a method for manufacturing a semiconductor device using the film are provided.

One… Base layer
3… Adhesive layer
3a... First area
3b... Second area
5… Adhesive layer
5P... Adhesive piece
5C... Hardened
8… DAF
10… Dicing/die bonding integrated film
70... Board
100… Semiconductor device
DR… Dicing ring
F1… First side
F2... Side 2
S, S1, S2, S3, S4... chip
W… wafer

Claims (13)

A dicing die comprising a base material layer, an adhesive layer having a first surface facing the base layer and a second surface opposite to the base layer, and an adhesive layer provided so as to cover a central portion of the second surface of the adhesive layer The process of preparing a bonding integrated film,
A step of attaching a wafer to the adhesive layer of the dicing die-bonding integrated film and attaching a dicing ring to the second surface of the adhesive layer; and
A step of subdividing the wafer into a plurality of chips having an area of 9 mm ² or less;
A step of picking up the chip from the pressure-sensitive adhesive layer together with an adhesive piece formed by separating the adhesive layer;
Including a step of mounting the chip on the substrate or other chip through the adhesive piece,
The pressure-sensitive adhesive layer has a first region corresponding to a region of the adhesive layer to which the wafer is affixed, and a second region to which the dicing ring is affixed,
The first region is a region in a state in which adhesive strength is lowered compared to the second region by irradiation of active energy rays,
A method for manufacturing a semiconductor device, wherein the adhesive force of the first region to the adhesive layer is 1.2N/25mm or more and 4.5N/25mm or less, measured under conditions of a peeling angle of 30° and a peeling rate of 60 mm/min at a temperature of 23°C. The method according to claim 1,
A method for manufacturing a semiconductor device, wherein the adhesive force of the second region to the stainless substrate is 0.2 N/25 mm or more, measured under conditions of a peeling angle of 90° and a peeling rate of 50 mm/min at a temperature of 23°C. The method according to claim 1 or 2,
A method of manufacturing a semiconductor device, wherein the plurality of chips have a square or rectangular shape and have sides of 3 mm or less. The method according to any one of claims 1 to 3,
The first and second regions of the pressure-sensitive adhesive layer are made of the same composition before irradiation with active energy rays,
The method of manufacturing a semiconductor device, wherein the first region is formed through a step of irradiating an active energy ray in an amount of 10 to 1000 mJ/cm ² to the region to be the first region. A substrate layer,
A pressure-sensitive adhesive layer having a first surface facing the base layer and a second surface opposite to the base layer,
It has an adhesive layer provided to cover the central portion of the second surface,
The pressure-sensitive adhesive layer has a first region including at least a region corresponding to an affixing position of the wafer in the adhesive layer, and a second region positioned to surround the first region,
The first region is a region in a state in which adhesive strength is lowered compared to the second region by irradiation of active energy rays,
Dicing and die-bonding integral type, wherein the adhesive force of the first region to the adhesive layer is 1.2N/25mm or more and 4.5N/25mm or less, measured under conditions of a peeling angle of 30° and a peeling rate of 60 mm/min at a temperature of 23°C. film. The method of claim 5,
A dicing-die-bonding integrated film having an adhesive force of 0.2 N/25 mm or more to the stainless substrate in the second region, measured under conditions of a peeling angle of 90° and a peeling rate of 50 mm/min at a temperature of 23°C. The method according to claim 5 or 6,
A dicing-die-bonding integrated film applied to a semiconductor device manufacturing process including a step of dividing a wafer into a plurality of chips having an area of 9 mm ² or less. The method according to any one of claims 5 to 7,
The second region contains a (meth)acrylic resin having a functional group capable of chain polymerization,
The functional group is at least one selected from acryloyl group and methacryloyl group,
The dicing-die-bonding integrated film, wherein the content of the functional group in the second region is 0.1 mmol/g to 1.2 mmol/g. The method according to any one of claims 5 to 8,
The second region contains a crosslinking agent,
A dicing-die-bonding integrated film, wherein the content of the crosslinking agent in the second region is 0.1 to 20% by mass. The method of claim 9,
The dicing-die-bonding integrated film, wherein the crosslinking agent is a reaction product of a polyfunctional isocyanate having two or more isocyanate groups in one molecule and a polyhydric alcohol having three or more OH groups in one molecule. The method according to any one of claims 5 to 10,
The dicing-die-bonding integrated film, wherein the adhesive layer is made of a composition containing an energy curable group-containing (meth)acrylic copolymer, a curing accelerator, and a filler. As a manufacturing method of the integrated dicing-die-bonding film according to any one of claims 5 to 11,
On the surface of the substrate layer, a step of producing a laminate comprising a pressure-sensitive adhesive layer made of a composition whose adhesive strength is reduced by irradiation with active energy rays, and the adhesive layer formed on the surface of the pressure-sensitive adhesive layer,
A method for producing a dicing-die-bonding integrated film, comprising, in this order, irradiating an active energy ray to a region serving as the first region of the pressure-sensitive adhesive layer included in the laminate. As a manufacturing method of the integrated dicing-die-bonding film according to any one of claims 5 to 11,
A step of forming a pressure-sensitive adhesive layer made of a composition whose adhesive strength is lowered by irradiation with active energy rays on the surface of the substrate layer, and
A step of irradiating an active energy ray to a region that becomes the first region of the pressure-sensitive adhesive layer,
A method for producing a dicing-die-bonding integrated film comprising, in this order, a step of laminating the adhesive layer on the surface of the adhesive layer after irradiation with the active energy ray.

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