KR20220100868A - Dicing and die-bonding integrated film, manufacturing method thereof, and semiconductor device manufacturing method - Google Patents

Abstract

Disclosed are a dicing die-bonding integrated film and a method for manufacturing the same. The dicing die-bonding integrated film includes a base layer, a pressure-sensitive adhesive layer made of an active energy ray-curable pressure-sensitive adhesive having a first surface facing the base layer and a second surface on the opposite side, and covering the central portion of the second surface. An adhesive layer is provided so as to The active energy ray-curable pressure-sensitive adhesive includes a (meth)acrylic resin having a functional group capable of chain polymerization, the functional group is at least one selected from an acryloyl group and a methacryloyl group, and a functional group in the (meth)acrylic resin The content of is 0.4 mmol/g or more.

Description

Dicing and die-bonding integrated film, manufacturing method thereof, and semiconductor device manufacturing method

The present disclosure relates to a dicing and die-bonding integrated film, a method for manufacturing the same, and a method for manufacturing a semiconductor device.

A semiconductor device is manufactured through the following process. First, the dicing process of affixing the adhesive film for dicing on a wafer, and dividing a wafer into chips in that state is performed. After that, an expand process, a pickup process, a mounting process, a die bonding process, and the like are performed.

In the manufacturing process of a semiconductor device, the film called a dicing die-bonding integrated film is used. This film has a structure in which a base material layer, an adhesive layer, and an adhesive bond layer were laminated|stacked in this order, and is used as follows, for example. First, the wafer is diced in the state which affixed the surface on the side of an adhesive bond layer with respect to a wafer, and fixed the wafer with a dicing ring. In this way, the wafer is divided into a plurality of chips. Then, after weakening the adhesive force of the adhesive layer with respect to an adhesive bond layer by irradiating an active energy ray with respect to an adhesive layer, a chip is picked up from an adhesive layer together with the adhesive bond piece from which an adhesive bond layer is divided into pieces. Thereafter, a semiconductor device is manufactured through a step of mounting the chip on a substrate or the like via an adhesive piece. In addition, the laminated body which consists of a chip|tip obtained through a dicing process, and the adhesive agent piece attached to it is called DAF (Die Attach Film).

As described above, the pressure-sensitive adhesive layer (dicing film) whose adhesive strength is weakened by irradiation with an active energy ray is called an active energy ray curing type. On the other hand, in the manufacturing process of a semiconductor device, an active energy ray is not irradiated, but the adhesive layer of the state in which adhesive force is fixed is called a pressure-sensitive type. A dicing and die-bonding integrated film having a pressure-sensitive adhesive layer does not require a step of irradiating an active energy ray for a user (mainly a semiconductor device maker), and is advantageous in that no equipment is required for this purpose. there is In Patent Document 1, the pressure-sensitive adhesive layer can be said to be an active energy ray-curable type in that it contains a component that is cured by an active energy ray, while only a predetermined portion of the pressure-sensitive adhesive layer is irradiated with an active energy ray in advance, and the user is a semiconductor A dicing and die-bonding integrated film, which can also be called a pressure-sensitive type, is disclosed in that it is not necessary to irradiate an active energy ray in the manufacturing process of the device.

Patent Document 1: Japanese Patent Publication No. 4443962

By the way, semiconductor devices, particularly devices called memories, are widely used in computers, servers, smart phones, etc., and circuit miniaturization and high integration are required. In accordance with the miniaturization and high integration of such circuits, reduction of the wiring width and the distance between wirings in circuit designs on wafers is being studied.

On the other hand, in the design of the wafer, it is necessary to set a region that does not have a circuit called a scribe line between the chip and the chip in view of cutting with a blade in the dicing process, and narrowing of the scribe line is also required. . The dicing process is performed using a blade rotating at high speed. Therefore, in order to realize the narrowing of the scribe line, it is necessary to use a narrow blade. However, when a narrow blade (for example, a blade with a width of about 10 to 50 μm) is used, the gap between the chip and the chip after the dicing process (hereinafter, this gap is referred to as “the width of the kerf (groove)”) ) may not be sufficiently secured, and in the pickup process, a phenomenon in which two or more chips are picked up at the same time (hereinafter, this phenomenon may be referred to as "double die") may occur. have. When double dies occur, as a result, production efficiency is lowered.

In addition, the expand process performed subsequent to the dicing process is a process of separating the divided chips|chips apart in order to expand the width|variety of a kerf. However, as the chip becomes smaller, the number of cuff lines to be separated increases, and the effect of the expand process is dispersed, so the effect is limited.

The present disclosure has been made in view of the above circumstances, and its main object is to provide a dicing and die-bonding integrated film capable of sufficiently securing the width of the cuff even when a narrow blade is used, and a method for manufacturing the same.

One aspect of the present disclosure relates to a method of manufacturing a semiconductor device. The manufacturing method of this semiconductor device includes a base material layer, a pressure-sensitive adhesive layer made of an active energy ray-curable pressure-sensitive adhesive having a first surface facing the substrate layer and a second surface opposite to the first surface, and a second pressure-sensitive adhesive layer. A first step of preparing a dicing and die-bonding integrated film having an adhesive layer provided to cover the central portion of the surface, and attaching the wafer to the adhesive layer of the dicing and die-bonding integrated film, and a second pressure-sensitive adhesive layer A second step of attaching a dicing ring to the surface, a third step of dividing the wafer into a plurality of chips together with an adhesive layer and an adhesive layer by blade dicing using a blade to form a cut body; A fourth step of picking up the chip from the pressure-sensitive adhesive layer of the cut body together with the adhesive piece from which the layers are separated, and a fifth step of mounting the chip on a substrate or another chip via the adhesive piece are provided. The pressure-sensitive adhesive layer has a first region corresponding to the region to which the wafer in the adhesive layer is affixed, and a second region to which the dicing ring is affixed, the first region is irradiated with an active energy ray to the second region and Comparatively, it is a region in a state in which the adhesive force is lowered. In the third step, the width (kerf width) of the cuff formed on the pressure-sensitive adhesive layer of the cut body by blade dicing is 75% or more of the width of the blade (blade width). According to the study of the present inventors, it was found that if the width of the cuff formed in the pressure-sensitive adhesive layer of the cut body by blade dicing was 75% or more with respect to the width of the blade, there was a tendency that the double die could be suppressed. Therefore, according to the manufacturing method of the said semiconductor device, it can become possible to improve production efficiency.

The width (blade width) of the blade may be 10 to 50 µm. Even when such a relatively narrow blade is used, the double die can be more sufficiently suppressed.

The plurality of chips may have a square or rectangular shape and may have an area of 200 mm ² or less.

One aspect of the present disclosure relates to a dicing die-bonding integrated film. This film has a base layer, a pressure-sensitive adhesive layer made of an active energy ray-curable pressure-sensitive adhesive having a first face facing the base layer and a second face opposite to the first face, and the second face is provided to cover the central portion An adhesive layer is provided. The adhesive layer has a 1st area|region which contains at least the area|region corresponding to the affixing position of the wafer in an adhesive bond layer, and a 2nd area|region located so that the 1st area|region may be enclosed, and a 1st area|region is irradiated with an active energy ray. Thus, compared to the second region, the region is in a state in which the adhesive force is lowered. The active energy ray-curable pressure-sensitive adhesive contains a (meth)acrylic resin having a functional group capable of chain polymerization, the functional group is at least one selected from an acryloyl group and a methacryloyl group, and a functional group in the (meth)acrylic resin The content of is 0.4 mmol/g or more.

According to the dicing and die-bonding integrated film, it can be suitably used in the method for manufacturing a semiconductor device, and even when a narrow blade is used, it is possible to sufficiently secure the width of the cuff. By using such a dicing and die-bonding integrated film, double dies can be suppressed, and as a result, it can become possible to improve production efficiency.

The active energy ray-curable adhesive may further contain the crosslinking agent. When such a crosslinking agent is further included, 0.1-15 mass % of content of the crosslinking agent with respect to the total mass of an active energy ray hardening-type adhesive may be sufficient. The crosslinking agent may be a reaction product of a polyfunctional isocyanate having two or more isocyanate groups in one molecule and a polyhydric alcohol having three or more hydroxyl groups in one molecule.

The adhesive layer may consist of an adhesive composition containing a reactive group-containing (meth)acrylic copolymer, a curing accelerator, and a filler.

The dicing and die-bonding integrated film may be applied to a manufacturing process of a semiconductor device including a step of dividing a wafer into a plurality of chips having an area of 200 mm ² or less.

One aspect of the present disclosure relates to a method of manufacturing a dicing die-bonding integrated film. A first aspect of this manufacturing method is a process for producing a laminate comprising an adhesive layer made of an active energy ray-curable pressure-sensitive adhesive on the surface of a base layer, and an adhesive layer formed on the surface of the pressure-sensitive adhesive layer; The process of irradiating an active energy ray to the area|region used as the 1st area|region of the contained adhesive layer is provided in this order. Moreover, the 2nd aspect of this manufacturing method is the process of forming on the surface of a base material layer, the adhesive layer which consists of a composition which adhesive force falls by irradiating an active energy ray, and active in the area|region used as the 1st area|region of an adhesive layer. The process of irradiating an energy ray and the process of laminating|stacking an adhesive bond layer on the surface of the said adhesive layer after irradiating an active energy ray are provided in this order.

According to the present disclosure, a dicing and die-bonding integrated film capable of sufficiently securing the width of the cuff even when a narrow blade is used and a method for manufacturing the same are provided. Further, according to the present disclosure, a method for manufacturing a semiconductor device using such a dicing and die-bonding integrated film is provided. According to the manufacturing method of such a semiconductor device, it becomes possible to suppress a double die, and it can become possible to improve production efficiency.

Fig. 1 (a) is a plan view showing one embodiment of a dicing and die-bonding integrated film, and Fig. 1 (b) is a schematic cross-sectional view taken along line BB shown in Fig. 1 (a).
It is a schematic diagram which shows the state by which the dicing ring was affixed on the periphery of the adhesive layer of the dicing die-bonding integrated film, and the wafer was affixed on the surface of the adhesive bond layer.
3 is a schematic cross-sectional view of an embodiment of a semiconductor device.
4(a), 4(b), 4(c), and 4(d) are cross-sectional views schematically showing a process of manufacturing a DAF (a laminate of a chip and an adhesive piece). .
Fig. 5 (a) is a plan view schematically showing one embodiment of a cut body, and Fig. 5 (b) is an enlarged view in part E of Fig. 5 (a).
6 is a cross-sectional view schematically illustrating a process of manufacturing the semiconductor device shown in FIG. 3 .
FIG. 7 is a cross-sectional view schematically illustrating a process of manufacturing the semiconductor device shown in FIG. 3 .
FIG. 8 is a cross-sectional view schematically illustrating a process of manufacturing the semiconductor device shown in FIG. 3 .

EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this indication is described in detail, referring drawings. In the following description, the same code|symbol is attached|subjected to the same or equivalent part, and the overlapping description is abbreviate|omitted. In addition, this invention is not limited to the following embodiment. In this specification, (meth)acryl means acryl or methacryl, and other analogous expressions, such as (meth)acrylate, are also the same.

<Dicing and die-bonding integrated film>

Fig. 1 (a) is a plan view showing the dicing and die-bonding integrated film according to the present embodiment, and Fig. 1 (b) is a schematic cross-sectional view taken along line BB in Fig. 1 . The dicing and die-bonding integrated film 10 (hereinafter, simply referred to as “film 10” in some cases) is a process of dividing the wafer W into a plurality of chips having an area of 200 mm ² or less (and It can use suitably for the manufacturing process of the semiconductor device including the process of picking up after that (refer FIG.4(c) and FIG.4(d)).

The film 10 is an adhesive layer 3 having a base layer 1 and a first face F1 facing the base layer 1 and a second face F2 opposite to the first face F1. ) and the adhesive layer 5 provided to cover the central part of the 2nd surface F2 of the adhesive layer 3 is provided in this order. In this embodiment, although the aspect in which one laminated body of the adhesive layer 3 and the adhesive bond layer 5 was formed on the square base material layer 1 is illustrated, the base material layer 1 has a predetermined length (for example, For example, 100 m or more), and the laminated body of the adhesive layer 3 and the adhesive bond layer 5 may be arrange|positioned at predetermined intervals so that it may be aligned in the longitudinal direction.

The film 10 is an adhesive layer 3 having a base layer 1 and a first face F1 facing the base layer 1 and a second face F2 opposite to the first face F1. ) and the adhesive layer 5 provided to cover the central part of the 2nd surface F2 of the adhesive layer 3 is provided in this order. In this embodiment, although the aspect in which one laminated body of the adhesive layer 3 and the adhesive bond layer 5 was formed on the square base material layer 1 is illustrated, the base material layer 1 has a predetermined length (for example, For example, 100 m or more), and the laminated body of the adhesive layer 3 and the adhesive bond layer 5 may be arrange|positioned at predetermined intervals so that it may be aligned in the longitudinal direction.

(Adhesive layer)

The adhesive layer 3 surrounds the 1st area|region 3a which contains at least the area|region Rw corresponding to the pasting position of the wafer W in the adhesive bond layer 5, and the 1st area|region 3a. a second region 3b located therein. The broken line in FIG.1(a) and FIG.1(b) shows the boundary of the 1st area|region 3a and the 2nd area|region 3b. The 1st area|region 3a and the 2nd area|region 3b consist of the same composition (active energy ray hardening-type adhesive) before irradiation of an active energy ray. The 1st area|region 3a is an area|region in the state in which adhesive force fell compared with the 2nd area|region 3b by irradiating an active energy ray. The 2nd area|region 3b is the area|region to which the dicing ring DR is pasted (refer FIG. 2). The second region 3b is a region not irradiated with an active energy ray, and has a high adhesive force to the dicing ring DR. At least 1 type selected from an ultraviolet-ray, an electron beam, and a visible light ray may be sufficient as an active energy ray, and an ultraviolet-ray may be sufficient as it. The irradiation amount of the active energy ray may be, for example, 10-1000 mJ/cm ² , 100-700 mJ/cm ² , or 100-500 mJ/cm ² .

The adhesive layer before irradiation of an active energy ray consists of an active energy ray hardening-type adhesive containing a (meth)acrylic-type resin. The second region 3b to which the active energy ray is not irradiated may have the same composition as the pressure-sensitive adhesive layer before irradiating the active energy ray. Hereinafter, the components contained in an active energy ray hardening-type adhesive are demonstrated in detail.

[(meth)acrylic resin]

The active energy ray-curable pressure-sensitive adhesive contains a (meth)acrylic resin having a functional group capable of chain polymerization. When such a (meth)acrylic-type resin is included, a functional group is at least 1 sort(s) chosen from an acryloyl group and a methacryloyl group. Content of the functional group in (meth)acrylic-type resin is 0.4 mmol/g or more. Content of the functional group in (meth)acrylic-type resin may be 0.5 mmol/g or more, 0.6 mmol/g or more, 0.7 mmol/g or more, 0.8 mmol/g or more, or 0.9 mmol/g or more, and 2.0 mmol/g Hereinafter, 1.8 mmol/g or less, 1.5 mmol/g or less, 1.2 mmol/g or less, or 1.0 mmol/g or less may be sufficient. When content of a functional group is 0.4 mmol/g or more, there exists a tendency for it easy to form the area|region (1st area|region 3a in FIG. 1) in which adhesive force fell suitably by irradiation of an active energy ray. In addition, the cuff of the pressure-sensitive adhesive layer 3 formed by dicing is a stress caused by curing shrinkage caused by curing by irradiation with active energy rays when the first region 3a of the pressure-sensitive adhesive layer 3 is formed. The present inventors think that the width|variety (kerf width) becomes easy to expand when there are many cure shrinkage amounts, such as a (meth)acrylic-type resin in the adhesive layer 3 which generate|occur|produce by opening by this dicing. Therefore, when the content of the functional group is 0.4 mmol/g or more, the amount of cure shrinkage of the pressure-sensitive adhesive layer 3 becomes sufficient, and even when a narrow blade is used, it becomes possible to sufficiently ensure the kerf width. On the other hand, when it is 2.0 mmol/g or less, there exists a tendency for the outstanding pick-up property to be easy to achieve.

The (meth)acrylic resin can be obtained by synthesizing it by a known method. Examples of the synthesis method include a solution polymerization method, a suspension polymerization method, an emulsion polymerization method, a bulk polymerization method, a precipitation polymerization method, a gas phase polymerization method, a plasma polymerization method, and a supercritical polymerization method. can Examples of the polymerization reaction include radical polymerization, cationic polymerization, anionic polymerization, living radical polymerization, living cationic polymerization, living anionic polymerization, coordination polymerization, immortal polymerization, etc., ATRP (atom transfer radical polymerization) and RAFT (reversible addition cleavage) chain transfer polymerization) can also be mentioned. Among these, synthesis by radical polymerization using the solution polymerization method has advantages such as good economic feasibility, high reaction rate, ease of polymerization control, and the like, as well as being able to blend the resin solution obtained by polymerization as it is.

Here, the method of obtaining a (meth)acrylic-type resin by radical polymerization using a solution polymerization method is taken as an example, and the synthesis method of a (meth)acrylic-type resin is demonstrated in detail.

As a monomer used when synthesize|combining (meth)acrylic-type resin, if it has one (meth)acryloyl group in 1 molecule, there will be no restriction|limiting in particular. Specific examples thereof include methyl (meth) acrylate, ethyl (meth) acrylate, butyl (meth) acrylate, isobutyl (meth) acrylate, tert-butyl (meth) acrylate, butoxyethyl (meth) acrylate , isoamyl (meth) acrylate, hexyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, heptyl (meth) acrylate, octyl heptyl (meth) acrylate, nonyl (meth) acrylate, decyl ( Meth) acrylate, undecyl (meth) acrylate, lauryl (meth) acrylate, tridecyl (meth) acrylate, tetradecyl (meth) acrylate, pentadecyl (meth) acrylate, hexadecyl (meth) Acrylate, stearyl (meth)acrylate, behenyl (meth)acrylate, methoxypolyethylene glycol (meth)acrylate, ethoxypolyethylene glycol (meth)acrylate, methoxypolypropylene glycol aliphatic (meth)acrylates such as (meth)acrylate, ethoxypolypropylene glycol (meth)acrylate, and mono(2-(meth)acryloyloxyethyl)succinate; Cyclopentyl (meth) acrylate, cyclohexyl (meth) acrylate, cyclopentyl (meth) acrylate, dicyclopentanyl (meth) acrylate, dicyclopentenyl (meth) acrylate, isobornyl (meth) alicyclic (meth)acrylates such as acrylate, mono(2-(meth)acryloyloxyethyl)tetrahydrophthalate, and mono(2-(meth)acryloyloxyethyl)hexahydrophthalate; Benzyl (meth) acrylate, phenyl (meth) acrylate, o-biphenyl (meth) acrylate, 1-naphthyl (meth) acrylate, 2-naphthyl (meth) acrylate, phenoxyethyl (meth) Acrylate, p-cumylphenoxyethyl (meth)acrylate, o-phenylphenoxyethyl (meth)acrylate, 1-naphthoxyethyl (meth)acrylate, 2-naphthoxyethyl (meth)acrylate, phenoxy Cypolyethylene glycol (meth)acrylate, nonylphenoxypolyethylene glycol (meth)acrylate, phenoxypolypropylene glycol (meth)acrylate, 2-hydroxy-3-phenoxypropyl (meth) Acrylate, 2-hydroxy-3-(o-phenylphenoxy)propyl (meth)acrylate, 2-hydroxy-3-(1-naphthoxy)propyl (meth)acrylate, 2-hydroxy-3 Aromatic (meth)acrylates, such as -(2-naphthoxy)propyl (meth)acrylate; Heterocyclic (meth), such as 2-tetrahydrofurfuryl (meth)acrylate, N-(meth)acryloyloxyethyl hexahydrophthalimide, and 2-(meth)acryloyloxyethyl-N-carbazole ) acrylates, caprolactone-modified products thereof, ω-carboxy-polycaprolactone mono (meth) acrylate, glycidyl (meth) acrylate, α-ethyl glycidyl (meth) acrylate, α-propyl glycidyl Cydyl (meth) acrylate, α-butyl glycidyl (meth) acrylate, 2-methylglycidyl (meth) acrylate, 2-ethyl glycidyl (meth) acrylate, 2-propyl glycidyl (meth)acrylate, 3,4-epoxybutyl (meth)acrylate, 3,4-epoxyheptyl (meth)acrylate, α-ethyl-6,7-epoxyheptyl (meth)acrylate, 3,4- compounds having an ethylenically unsaturated group and an epoxy group, such as epoxycyclohexylmethyl (meth)acrylate, o-vinylbenzyl glycidyl ether, m-vinylbenzyl glycidyl ether, and p-vinylbenzyl glycidyl ether; (2-ethyl-2-oxetanyl)methyl (meth)acrylate, (2-methyl-2-oxetanyl)methyl (meth)acrylate, 2-(2-ethyl-2-oxetanyl)ethyl (meth)acrylate, 2-(2-methyl-2-oxetanyl)ethyl (meth)acrylate, 3-(2-ethyl-2-oxetanyl)propyl (meth)acrylate, 3-(2 a compound having an ethylenically unsaturated group and an oxetanyl group, such as -methyl-2-oxetanyl)propyl (meth)acrylate; compounds having an ethylenically unsaturated group and an isocyanate group such as 2-(meth)acryloyloxyethyl isocyanate; 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 3-chloro-2-hydroxypropyl (meth) acrylate, 2- The compound which has ethylenically unsaturated groups, such as hydroxybutyl (meth)acrylate, and a hydroxyl group is mentioned. By combining these suitably, the target (meth)acrylic-type resin can be obtained.

The (meth)acrylic resin may have at least one functional group selected from a hydroxyl group, a glycidyl group (epoxy group), an amino group, and the like as a reaction point with a functional group-introducing compound or crosslinking agent described later. As a monomer for synthesizing (meth)acrylic resin having a hydroxyl group, for example, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acryl The compound etc. which have ethylenically unsaturated groups, such as a rate, 3-chloro-2-hydroxypropyl (meth)acrylate, and 2-hydroxybutyl (meth)acrylate, and a hydroxyl group are mentioned. These may be used individually by 1 type or may use 2 or more types together.

As a monomer for synthesizing a (meth)acrylic resin having a glycidyl group, glycidyl (meth)acrylate, α-ethylglycidyl (meth)acrylate, α-propylglycidyl (meth)acrylate, α-butyl glycidyl (meth) acrylate, 2-methyl glycidyl (meth) acrylate, 2-ethyl glycidyl (meth) acrylate, 2-propyl glycidyl (meth) acrylate, 3, 4-epoxybutyl (meth)acrylate, 3,4-epoxyheptyl (meth)acrylate, α-ethyl-6,7-epoxyheptyl (meth)acrylate, 3,4-epoxycyclohexylmethyl (meth)acryl and compounds having an ethylenically unsaturated group and an epoxy group, such as lactate, o-vinylbenzyl glycidyl ether, m-vinyl benzyl glycidyl ether, and p-vinyl benzyl glycidyl ether. These may be used individually by 1 type or may use 2 or more types together.

The (meth)acrylic-type resin synthesize|combined from these monomers contains the functional group which can be chain-polymerized. The functional group capable of chain polymerization is at least one selected from, for example, an acryloyl group and a methacryloyl group. The functional group capable of chain polymerization is, for example, a (meth)acrylic resin having at least one functional group selected from a hydroxyl group, a glycidyl group (epoxy group), an amino group, and the like synthesized as described above, and the following compound (functional group introduction) compound), it can introduce|transduce in the said (meth)acrylic-type resin. That is, content of the functional group in (meth)acrylic-type resin can be adjusted with the introduction amount of a functional group introduction compound. Specific examples of the functional group-introducing compound include 2-methacryloyloxyethyl isocyanate, meta-isopropenyl-α,α-dimethylbenzyl isocyanate, methacryloyl isocyanate, allyl isocyanate cyanate, 1,1-(bisacryloyloxymethyl)ethylisocyanate; Acryloyl monoisocyanate compound obtained by reaction of a diisocyanate compound or a polyisocyanate compound, and hydroxyethyl (meth)acrylate or 4-hydroxybutylethyl (meth)acrylate; The acryloyl monoisocyanate compound etc. which are obtained by reaction of a diisocyanate compound or a polyisocyanate compound, a polyol compound, and hydroxyethyl (meth)acrylate are mentioned. These may be used individually by 1 type or may use 2 or more types together. Among these, the functional group-introducing compound may be 2-methacryloyloxyethyl isocyanate.

[Photoinitiator]

The active energy ray-curable adhesive may further contain the photoinitiator. There is no restriction|limiting in particular as long as a photoinitiator generate|occur|produces the active species which can be chain-polymerized by irradiating an active energy ray. At least 1 type selected from an ultraviolet-ray, an electron beam, and a visible light ray may be sufficient as an active energy ray, and an ultraviolet-ray may be sufficient as it. As a photoinitiator, a photoradical polymerization initiator etc. are mentioned, for example. Here, the active species capable of chain polymerization means that a polymerization reaction is initiated by reacting with a functional group capable of chain polymerization.

As a photo-radical polymerization initiator, For example, benzoin ketals, such as 2, 2- dimethoxy-1,2- diphenylethan-1-one; 1-Hydroxycyclohexylphenylketone, 2-hydroxy-2-methyl-1-phenylpropan-1-one, 1-[4-(2-hydroxyethoxy)phenyl]-2-hydroxy-2- α-hydroxyketones such as methyl-1-propan-1-one; 2-Benzyl-2-dimethylamino-1-(4-morpholinophenyl)-butan-1-one, 1,2-methyl-1-[4-(methylthio)phenyl]-2-morphopoly α-aminoketones such as nopropan-1-one; oxime esters such as 1-[4-(phenylthio)phenyl]-1,2-octadione-2-(benzoyl)oxime; Bis(2,4,6-trimethylbenzoyl)phenylphosphine oxide, bis(2,6-dimethoxybenzoyl)-2,4,4-trimethylpentylphosphine oxide, 2,4,6-trimethyl Phosphine oxides, such as a benzoyl diphenyl phosphine oxide; 2-(o-chlorophenyl)-4,5-diphenylimidazole dimer, 2-(o-chlorophenyl)-4,5-di(methoxyphenyl)imidazole dimer, 2-(o- Fluorophenyl)-4,5-diphenylimidazole dimer, 2-(o-methoxyphenyl)-4,5-diphenylimidazole dimer, 2-(p-methoxyphenyl)-4 2,4,5-triaryl imidazole dimers, such as a , 5- diphenyl imidazole dimer; Benzophenone, N,N'-tetramethyl-4,4'-diaminobenzophenone, N,N'-tetraethyl-4,4'-diaminobenzophenone, 4-methoxy-4'-dimethylamino benzophenone compounds such as benzophenone; 2-ethylanthraquinone, phenanthrenequinone, 2-tert-butylanthraquinone, octamethylanthraquinone, 1,2-benzanthraquinone, 2,3-benzanthraquinone, 2-phenylanthraquinone, 2,3-di Phenylanthraquinone, 1-chloroanthraquinone, 2-methylanthraquinone, 1,4-naphthoquinone, 9,10-phenanthraquinone, 2-methyl-1,4-naphthoquinone, 2,3-dimethyl quinone compounds such as anthraquinone; benzoin ethers such as benzoin methyl ether, benzoin ethyl ether, and benzoin phenyl ether; benzoin compounds such as benzoin, methylbenzoin, and ethylbenzoin; benzyl compounds such as benzyldimethyl ketal; Acridine compounds, such as 9-phenylacridine and 1,7-bis (9,9'- acridinyl heptane): N-phenylglycine, coumarin, etc. are mentioned.

0.1-30 mass parts, 0.3-10 mass parts, or 0.5-5 mass parts may be sufficient as content of the photoinitiator in an active energy ray hardening-type adhesive with respect to content 100 mass parts of (meth)acrylic-type resin. When content of a photoinitiator is 0.1 mass part or more, hardening becomes enough after an adhesive layer irradiation with an active energy ray, and there exists a tendency for a pickup defect to occur easily. When content of a photoinitiator is 30 mass parts or less, there exists a tendency which can prevent the contamination with respect to an adhesive bond layer (transfer to the adhesive bond layer of a photoinitiator).

[crosslinking agent]

The active energy ray-curable adhesive may further contain the crosslinking agent. A crosslinking agent is used for the purpose of controlling the elastic modulus and/or adhesiveness of an adhesive layer, for example. The crosslinking agent may be a compound having two or more functional groups capable of reacting with at least one functional group selected from a hydroxyl group, a glycidyl group, an amino group, and the like of the (meth)acrylic resin in one molecule. As a bond formed by reaction of a crosslinking agent and (meth)acrylic-type resin, an ester bond, an ether bond, an amide bond, an imide bond, a urethane bond, a urea bond, etc. are mentioned, for example.

In the present embodiment, the crosslinking agent may be, for example, a polyfunctional isocyanate having two or more isocyanate groups in one molecule. When such a polyfunctional isocyanate is used, it easily reacts with the hydroxyl group, glycidyl group, amino group, etc. which the (meth)acrylic-type resin has, and can form a strong crosslinked structure.

Examples of the polyfunctional isocyanate having two or more isocyanate groups in one molecule include 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1, 3-xylylene diisocyanate, 1,4-xylylene diisocyanate, diphenylmethane-4,4'-diisocyanate, diphenylmethane-2,4'-diiso Cyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane-4,4'-diisocyanate, Isocyanate compounds, such as dicyclohexylmethane-2,4'- diisocyanate and lysine isocyanate, etc. are mentioned.

The crosslinking agent may be a reaction product of a polyfunctional isocyanate and a polyhydric alcohol having two or more hydroxyl groups in one molecule (isocyanate group-containing oligomer). Examples of the polyhydric alcohol having two or more hydroxyl groups in one molecule include ethylene glycol, propylene glycol, butylene glycol, 1,6-hexanediol, 1,8-octanediol. , 1,9-nonanediol, 1,10-decanediol, 1,11-undecanediol, 1,12-dodecaindiol, glycerin, trimethylolpropane, pentaerythritol, diol Pentaerythritol, 1,4-cyclohexanediol, 1,3-cyclohexanediol, etc. are mentioned.

Among these, the crosslinking agent may be a reaction product of a polyfunctional isocyanate having two or more isocyanate groups in one molecule and a polyhydric alcohol having three or more hydroxyl groups in one molecule (isocyanate group-containing oligomer). do. By using such an isocyanate group-containing oligomer as a crosslinking agent, the pressure-sensitive adhesive layer 3 forms a dense crosslinked structure, thereby sufficiently suppressing adhesion of the pressure-sensitive adhesive to the adhesive layer 5 in the pickup process. tends to

Content of the crosslinking agent in an active energy ray hardening-type adhesive can be suitably set according to the cohesive force calculated|required with respect to an adhesive layer, elongation at break, adhesiveness with an adhesive bond layer, etc. Specifically, 3-30 mass parts, 4-15 mass parts, or 7-10 mass parts may be sufficient as content of a crosslinking agent with respect to content 100 mass parts of (meth)acrylic-type resin. By making the content of the crosslinking agent in the above range, it is possible to achieve good balance between the properties required for the pressure-sensitive adhesive layer in the dicing process and the properties required for the pressure-sensitive adhesive layer in the die bonding step, and excellent pick-up properties can also be achieved. have.

If the content of the crosslinking agent is 3 parts by mass or more with respect to 100 parts by mass of the content of the (meth)acrylic resin, the formation of the crosslinked structure is unlikely to be insufficient, and in the pickup step, the interfacial adhesion with the adhesive layer is sufficiently reduced, so that at the time of pickup Defects tend to be less likely to occur. On the other hand, when content of a crosslinking agent is 30 mass parts or more with respect to content of 100 mass parts of (meth)acrylic-type resin, an adhesive layer is hard to become hard too much, and there exists a tendency for a chip|tip to be hard to peel in an expand process.

Content of the crosslinking agent with respect to the total mass of an active energy ray hardening-type adhesive may be 0.1-15 mass %, 3-15 mass %, or 5-15 mass %, for example. When the content of the crosslinking agent is 0.1% by mass or more, it is easy to form a region (the first region 3a) in which the adhesive force is appropriately lowered by irradiation with active energy rays, and on the other hand, when it is 15% by mass or less, excellent pickup properties are achieved. tends to be easy.

What is necessary is just to set the thickness of the adhesive layer 3 suitably according to the conditions (temperature, tension|tensile_strength, etc.) of an expand process, for example, 1-200 micrometers, 5-50 micrometers, or 10-20 micrometers may be sufficient. If the thickness of the pressure-sensitive adhesive layer 3 is 1 μm or more, the adhesiveness is unlikely to be insufficient, and if it is 200 μm or less, the cuff width becomes wide at the time of expansion (stress is not relieved at the time of pushing up the pin), and the pickup becomes insufficient. tends to be difficult.

The adhesive layer 3 is formed on the base material layer 1 . As a formation method of the adhesive layer 3, the known method is employable. For example, the laminate of the base material layer 1 and the adhesive layer 3 may be formed by the two-layer extrusion method, the varnish (varnish for adhesive layer formation) of an active energy ray hardening type adhesive is prepared, and this is a base material layer It may be coated on the surface of (1), or the adhesive layer 3 may be formed on the film by which the release process was carried out, and this may be transcribe|transferred to the base material layer 1.

The varnish (varnish for adhesive layer formation) of an active energy ray hardening type adhesive is an organic solvent which can melt|dissolve (meth)acrylic-type resin, a photoinitiator, and a crosslinking agent, and may volatilize by heating. Specific examples of the organic solvent include aromatic hydrocarbons such as toluene, xylene, mesitylene, cumene, and p-cymene; cyclic ethers such as tetrahydrofuran and 1,4-dioxane; alcohols such as methanol, ethanol, isopropanol, butanol, ethylene glycol, and propylene glycol; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, and 4-hydroxy-4-methyl-2-pentanone; esters such as methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, and γ-butyrolactone; carbonate esters such as ethylene carbonate and propylene carbonate; Ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, propylene glycol mono Methyl ether, propylene glycol monoethyl ether, propylene glycol dimethyl ether, propylene glycol diethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether polyhydric alcohol alkyl ethers such as , diethylene glycol monobutyl ether, diethylene glycol dimethyl ether, and diethylene glycol diethyl ether; Ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether acetate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, polyhydric alcohol alkyl ether acetates such as diethylene glycol monomethyl ether acetate and diethylene glycol monoethyl ether acetate; and amides such as N,N-dimethylformamide, N,N-dimethylacetamide, and N-methyl-2-pyrrolidone. These organic solvents may be used individually by 1 type, and may use 2 or more types together.

Among these, from the viewpoint of solubility and boiling point, the organic solvent is, for example, toluene, methanol, ethanol, isopropanol, acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, methyl acetate, ethyl acetate, butyl acetate. , ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, diethylene glycol dimethyl ether, ethylene glycol At least one selected from the group consisting of cholmonomethyl ether acetate, propylene glycol monomethyl ether acetate, and N,N-dimethylacetamide may be sufficient. Solid content concentration of a varnish is 10-60 mass % normally.

(substrate layer)

A known polymer sheet or film can be used for the base material layer 1, and on low-temperature conditions, if an expand process can be implemented, it will not restrict|limit especially. Specific examples of the substrate layer 1 include polyolefins such as crystalline polypropylene, amorphous polypropylene, high-density polyethylene, medium-density polyethylene, low-density polyethylene, ultra-low-density polyethylene, low-density linear polyethylene, polybutene, and polymethylpentene, ethylene- Vinyl acetate copolymer, ionomer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylic acid ester (random, alternating) copolymer, ethylene-butene copolymer, ethylene-hexene copolymer, poly oil Polyester such as lethane, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyetheretherketone, polyimide, polyetherimide, polyamide, wholly aromatic polyamide, polyphenylsulfide, aramid ( paper), glass, glass fiber, fluororesin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, silicone resin, or a mixture of these with a plasticizer, or a cured product crosslinked by electron beam irradiation. can be heard

The base layer 1 has a surface mainly comprising at least one resin selected from the group consisting of polyethylene, polypropylene, polyethylene-polypropylene random copolymer, and polyethylene-polypropylene block copolymer, and the surface and The adhesive layer 3 may be in contact. These resins can serve as good substrates from the viewpoints of characteristics such as Young's modulus, stress relaxation property, melting point, and the like, price, and recycling of waste materials after use. A single layer may be sufficient as the base material layer 1, and it may have a multilayer structure in which the layers which consist of different materials were laminated|stacked as needed. From a viewpoint of controlling adhesiveness with the adhesive layer 3, the base material layer 1 may perform surface roughening processes, such as a matting process and a corona treatment, with respect to the surface.

(Adhesive layer)

An adhesive composition constituting a known die-bonding film can be applied to the adhesive layer 5 . Specifically, the adhesive composition constituting the adhesive layer 5 may contain a reactive group-containing (meth)acrylic copolymer, a curing accelerator, and a filler. According to the adhesive layer 5 containing these components, it is excellent in adhesiveness between chips/substrates and between chips/chips, and it is possible to provide electrode embedding property, wire embedding property, etc., and, in the die bonding process, It tends to have characteristics such as being able to adhere, providing excellent curing in a short time, and having excellent reliability after molding with a sealant.

The reactive group-containing (meth)acrylic copolymer may be, for example, an epoxy group-containing (meth)acrylic copolymer. The copolymer obtained by using glycidyl (meth)acrylate as a raw material in the amount used as 0.5-6 mass % with respect to the copolymer obtained may be sufficient as an epoxy-group containing (meth)acryl copolymer. When content of glycidyl (meth)acrylate is 0.5 mass % or more, it will become easy to obtain high adhesive force, and on the other hand, there exists a tendency which gelation can be suppressed because it is 6 mass % or less. The monomer constituting the remainder of the reactive group-containing (meth)acrylic copolymer is, for example, an alkyl (meth)acrylate having an alkyl group having 1 to 8 carbon atoms such as methyl (meth)acrylate, styrene, and acrylonite. A reel or the like may be used. Among these, ethyl (meth)acrylate and/or butyl (meth)acrylate may be sufficient as the monomer which comprises the remainder of a reactive group containing (meth)acrylic copolymer. The mixing ratio can be adjusted in consideration of the Tg of the reactive group-containing (meth)acrylic copolymer. If Tg is -10 degreeC or more, it exists in the tendency which can suppress that the tacking property of the adhesive bond layer 5 in a B-stage state becomes large too much, and there exists a tendency excellent in handleability. In addition, the glass transition point (Tg) of an epoxy-group containing (meth)acryl copolymer may be 30 degrees C or less, for example. Although the polymerization method in particular is not restrict|limited, For example, pearl polymerization, solution polymerization, etc. are mentioned. As a commercially available epoxy group-containing (meth)acrylic copolymer, HTR-860P-3 (trade name, manufactured by Nagase Chemtex Co., Ltd.) is mentioned, for example.

From the viewpoints of adhesiveness and heat resistance, the weight average molecular weight of the epoxy group-containing (meth)acryl copolymer may be 100,000 or more, or may be 300,000 to 3,000,000 or 500,000 to 2,000,000. It can suppress that the fillability between a chip|tip and the board|substrate which supports this falls that a weight average molecular weight is 3 million or less. A weight average molecular weight is a polystyrene conversion value using the analytical curve by standard polystyrene by the gel permeation chromatography method (GPC).

As a hardening accelerator, tertiary amine, imidazole, quaternary ammonium salts, etc. are mentioned, for example. Specific examples of the curing accelerator include 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-phenylimidazolium tri melitate. These may be used individually by 1 type, and may use 2 or more types together.

An inorganic filler may be sufficient as a filler. Specific examples of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica, and amorphous silica. can These may be used individually by 1 type, and may use 2 or more types together.

The adhesive composition may further contain an epoxy resin and an epoxy resin curing agent. Examples of the epoxy resin include bisphenol A epoxy resin, bisphenol F epoxy resin, bisphenol S epoxy resin, alicyclic epoxy resin, aliphatic chain epoxy resin, phenol novolac epoxy resin, cresol novolak epoxy resin, Bisphenol A novolac type epoxy resin, diglycidyl ether of biphenol, diglycidyl ether of naphthalenediol, diglycidyl ether of phenol, diglycidyl ether of alcohol and bifunctional epoxy resins, such as products and their alkyl-substituted products, halides, and hydrogenated substances, and novolak-type epoxy resins. Moreover, you may apply other generally known epoxy resins, such as a polyfunctional epoxy resin and a heterocyclic-containing epoxy resin. These can be used individually or in combination of 2 or more types. Moreover, components other than an epoxy resin may be contained as an impurity in the range which does not impair a characteristic.

As an epoxy resin hardening|curing agent, the phenol resin etc. which can be obtained by making a phenol compound and the xylylene compound which are divalent coupling groups react in presence of a non-catalyst or an acid catalyst are mentioned, for example. As a phenol compound used for manufacture of a phenol resin, For example, phenol, o-cresol, m-cresol, p-cresol, o-ethyl phenol, p-ethyl phenol, o-n-propyl phenol, m-n-propyl phenol, p-n -Propylphenol, o-isopropylphenol, m-isopropylphenol, p-isopropylphenol, o-n-butylphenol, m-n-butylphenol, p-n-butylphenol, o-isobutylphenol, m-isobutylphenol, p -Isobutylphenol, octylphenol, nonylphenol, 2,4-xyleneol, 2,6-xyleneol, 3,5-xyleneol, 2,4,6-trimethylphenol, resorcin, catechol, hydroquinone , 4-methoxyphenol, o-phenylphenol, m-phenylphenol, p-phenylphenol, p-cyclohexylphenol, o-allylphenol, p-allylphenol, o-benzylphenol, p-benzylphenol, o- Chlorophenol, p-chlorophenol, o-bromophenol, p-bromophenol, o-iodophenol, p-iodophenol, o-fluorophenol, m-fluorophenol, p-fluorophenol, etc. can be heard These phenolic compounds may be used independently and may mix and use 2 or more types. As a xylylene compound which is a bivalent linking group used for manufacture of a phenol resin, xylylene dihalide shown below, xylylene diglycol, and its derivative(s) can be used. That is, specific examples of the xylylene compound include α,α′-dichloro-p-xylene, α,α′-dichloro-m-xylene, α,α′-dichloro-o-xylene, α, α′-dibromo-p-xylene, α,α′-dibromo-m-xylene, α,α′-dibromo-o-xylene, α,α′-diiodo-p-xylene , α,α′-diiodo-m-xylene, α,α′-diiodo-o-xylene, α,α′-dihydroxy-p-xylene, α,α′-dihydride Roxy-m-xylene, α,α′-dihydroxy-o-xylene, α,α′-dimethoxy-p-xylene, α,α′-dimethoxy-m-xylene, α ,α′-dimethoxy-o-xylene, α,α′-diethoxy-p-xylene, α,α′-diethoxy-m-xylene, α,α′-diethoxy- o-xylene, α,α′-di-n-propoxy-p-xylene, α,α′-di-n-propoxy-m-xylene, α,α′-di-n-propoxy -o-xylene, α,α'-di-isopropoxy-p-xylene, α,α'-diisopropoxy-m-xylene, α,α'-diisopropoxy-o-xyl Ren, α,α′-di-n-butoxy-p-xylene, α,α′-di-n-butoxy-m-xylene, α,α′-di-n-butoxy-o- Xylene, α,α′-diisobutoxy-p-xylene, α,α′-diisobutoxy-m-xylene, α,α′-diisobutoxy-o-xylene, α, α'-di-tert-butoxy-p-xylene, α,α'-di-tert-butoxy-m-xylene, α,α'-di-tert-butoxy-o-xylene, etc. can be heard These may be used individually by 1 type or may use 2 or more types together.

When making a phenol compound and a xylylene compound react, mineral acids, such as hydrochloric acid, sulfuric acid, phosphoric acid, and polyphosphoric acid; organic carboxylic acids such as dimethyl sulfuric acid, diethyl sulfuric acid, p-toluenesulfonic acid, methanesulfonic acid, and ethanesulfonic acid; super strong acids such as trifluoromethanesulfonic acid; strongly acidic ion exchange resins such as an alkanesulfonic acid type ion exchange resin; super acid ion exchange resins such as perfluoroalkanesulfonic acid type ion exchange resins (trade names: Nafion, manufactured by Nafion, Du Pont, "Nafion" is a registered trademark); natural and synthetic zeolites; A phenol resin can be obtained by reacting using an acid catalyst such as activated clay (acid clay) until the xylylene compound, which is a raw material, substantially disappears and the reaction composition becomes constant at 50 to 250°C. The reaction time can be appropriately set depending on the raw materials and the reaction temperature, for example, can be set to about 1 hour to 15 hours, and can be determined while tracking the reaction composition by GPC (gel permeation chromatography) or the like.

The thickness of the adhesive bond layer 5 may be 1-300 micrometers, 5-150 micrometers, or 10-100 micrometers, for example. When the thickness of the adhesive layer 5 is 1 µm or more, the adhesiveness is more excellent, and on the other hand, when it is 300 µm or less, there is a tendency that the splitting property and the pick-up property at the time of expansion are more excellent.

<Manufacturing method of dicing die-bonding integrated film>

The manufacturing method of the film 10 is, on the surface of the base layer 1, an adhesive layer formed of an active energy ray-curable pressure-sensitive adhesive whose adhesive strength is lowered by irradiation with active energy rays, and an adhesive layer formed on the surface of the pressure-sensitive adhesive layer ( The process of producing the laminated body containing 5) and the process of irradiating an active energy ray to the area|region used as the 1st area|region 3a of the adhesive layer contained in a laminated body are provided in this order. The irradiation amount of the active energy ray to the area|region used as the 1st area|region 3a may be 10-1000 mJ/cm< ² >, for example, 100-700 mJ/cm< ² >, or 100-500 mJ/cm< ² > may be sufficient. The said manufacturing method produces the laminated body of an adhesive layer and the adhesive bond layer 5 first, and irradiates an active energy ray to the specific area|region of an adhesive layer after that.

<Semiconductor device and its manufacturing method>

3 is a cross-sectional view schematically showing a semiconductor device according to the present embodiment. The semiconductor device 100 shown in this figure includes a substrate 70 , four chips S1 , S2 , S3 , and S4 stacked on the surface of the substrate 70 , and electrodes ( (not shown), wires W1, W2, W3, and W4 for electrically connecting the four chips S1, S2, S3, and S4, and a sealing layer 50 sealing them.

The substrate 70 may be, for example, an organic substrate, or a metal substrate such as a lead frame. The thickness of the substrate 70 may be, for example, 70 to 140 µm or 80 to 100 µm from the viewpoint of suppressing warpage of the semiconductor device 100 .

The four chips S1, S2, S3, and S4 are laminated through the cured product 5C of the adhesive piece 5P. The shape of the chips S1, S2, S3, and S4 in a plan view is, for example, a square or a rectangle. The area of the chips S1, S2, S3, S4 is, for example, 200 mm ² or less, 150 mm ² or less, 100 mm ² or less, 50 mm ² or less, 30 mm ² or less, 20 mm ² or less, 10 mm ² or less, or 9 mm ² or less. 0.1 to 200 mm ² , 0.1 to 150 mm ² , 0.1 to 100 mm ² , 0.1 to 50 mm ² , 0.1 to 30 mm ² , 0.1 to 20 mm ² , 0.1 to 10 mm ² , or 0.1 to 9 mm ² may be sufficient. The length of one side of the chips S1, S2, S3, S4 is, for example, 0.1 to 20 mm, 0.1 to 15 mm, 0.1 to 10 mm, 0.1 to 8 mm, 0.1 to 6 mm, 0.1 to 3 mm, 0.1 to 2 mm, or 0.1 ~1 mm may be sufficient. The thickness of the chips S1, S2, S3, and S4 may be, for example, 10 to 170 µm or 25 to 100 µm. Further, the length of one side of the four chips S1 , S2 , S3 , and S4 may be the same or different from each other, and the thickness is also the same.

The manufacturing method of the semiconductor device 100 is the 1st process of preparing the above-mentioned film 10, While sticking the wafer W with respect to the adhesive bond layer 5 of the film 10, the adhesive layer 3 A second process of attaching the dicing ring DR to the second surface F2 of A third step of segmenting into a plurality of chips S to form a cut body 20, a (dicing step), and a DAF 8 (a laminate of the chips S1 and the adhesive pieces 5P, Fig. 4 (d)) is picked up from the first region 3a of the pressure-sensitive adhesive layer 3 of the cut body 20, and the chip S1 is applied to the substrate ( 70) and a fifth process of mounting on it.

With reference to Fig.4 (a), Fig.4(b), Fig.4(c), Fig.4(d), and Fig.5(a), about an example of the manufacturing method of the DAF 8 Explain. First, the above-described film 10 is prepared. As shown in FIG.4(a) and FIG.4(b), the film 10 is affixed so that the adhesive bond layer 5 may contact|connect one surface of the wafer W. As shown in FIG. Moreover, the dicing ring DR is affixed with respect to the 2nd surface F2 of the adhesive layer 3 .

Next, the wafer W, the adhesive layer 5, and the adhesive layer 3 are diced by blade dicing using a blade. Thereby, as shown to FIG.4(c) and FIG.5(a), the wafer W is divided into pieces together with the adhesive bond layer 5 and the adhesive layer 3, and becomes the chip|tip S. The adhesive bond layer 5 is also divided into pieces, and it becomes the adhesive bond piece 5P. In this way, the cut body 20 is formed. Alternatively, the wafer W may be thinned by grinding the wafer W prior to dicing.

By the blade dicing, a cuff is formed in the pressure-sensitive adhesive layer 3 of the cut body 20 . The kerf width formed in the pressure-sensitive adhesive layer 3 of the cut body 20 by blade dicing may be 75% or more, 78% or more, or 80% or more of the blade width. By providing such a kerf width, a double die can be suppressed and, as a result, it can become possible to improve production efficiency. The pressure-sensitive adhesive layer 3 may shrink by dicing, that is, it may exceed 100%. The width of the kerf formed in the pressure-sensitive adhesive layer 3 of the cut body 20 by blade dicing may be 160% or less or 150% or less of the blade width. The cuff formed by dicing is generated when the stress caused by curing shrinkage caused by curing by irradiation with active energy rays when the first region 3a of the pressure-sensitive adhesive layer 3 is formed is released by dicing. Therefore, the present inventors think that the width|variety (kerf width) becomes easy to expand when there are many curing shrinkage amounts of (meth)acrylic-type resin in the adhesive layer 3 etc. The above-described dicing and die-bonding integrated film has a sufficient amount of cure shrinkage, and by using this, it becomes possible to form a kerf width satisfying the above requirements. In addition, the kerf width can measure the distance between the adhesive layers between adjacent chips in multiple places (at least three places) using an optical microscope, and these average values can be applied.

In the production of the dicing film (adhesive layer), when a pressure treatment such as pressing the pressure-sensitive adhesive layer in one direction with a rubber roll or the like is performed, the width of the kerf formed depending on the direction of blade dicing may be different. Hereinafter, this point is demonstrated, referring FIG.5(b). When a pressure treatment such as pressing the pressure-sensitive adhesive layer in one direction with a rubber roll or the like is performed, the one direction is the direction A, the same direction as the direction A is the direction Ch1, and the direction orthogonal to the Ch1 is the direction Ch2, When the kerf width WCh1 (the kerf width formed by dicing in the direction Ch2) between adjacent chips in the direction Ch1 and the kerf width WCh2 (the kerf width formed by the dicing in the direction Ch1) between the adjacent chips in the direction Ch2 are different there may be Usually, the kerf width WCh1 tends to have a larger swing width than the kerf width WCh2. In the relationship between the kerf width WCh1 and the kerf width WCh2 and the kerf width condition, either the kerf width WCh1 or the kerf width WCh2 may satisfy the above kerf width condition, but from the viewpoint of more reliably suppressing the double die, the kerf width It is preferable that both the width WCh1 and the kerf width WCh2 satisfy the condition of the kerf width.

The cuff width formed in the pressure-sensitive adhesive layer 3 of the cut body 20 by blade dicing may be, for example, 10 µm or more, 13 µm or more, 15 µm or more, or 17 µm or more. If the kerf width is 10 µm or more, it tends to be possible to suppress the double die, and if it is 13 µm or more, it tends to be able to suppress the double die more reliably. Although the upper limit in particular of a kerf width is not restrict|limited, For example, it can be 50 micrometers or less.

The blade width may be 10 to 50 µm, 10 to 30 µm or 10 to 25 µm. Even when such a relatively narrow blade is used, the double die can be more sufficiently suppressed. In addition, the blade width can apply the measured value calculated|required using the optical microscope from the notch of a silicon wafer, for example. The method for measuring the actual value may be, for example, the method described in the Examples.

After dicing, without irradiating active energy rays with respect to the pressure-sensitive adhesive layer 3, as shown in Fig. 4(d), by expanding the base material layer 1 under normal temperature or cooling conditions, the chip S While separating the adhesive piece 5P from the pressure-sensitive adhesive layer 3 by pushing it up with the pins 42 while being spaced apart from each other, the DAF 8 is sucked up by the suction collet 44 and picked up.

A method of manufacturing the semiconductor device 100 will be described in detail with reference to FIGS. 6 , 7 , and 8 . First, as shown in FIG. 6 , the first-stage chip S1 (chip S) is pressed to a predetermined position on the substrate 70 via the adhesive piece 5P. Next, the adhesive piece 5P is hardened by heating. Thereby, the adhesive bond piece 5P is hardened|cured and it becomes the hardened|cured material 5C. You may perform the hardening process of the adhesive bond piece 5P in a pressurized atmosphere from a viewpoint of reduction of a void.

In the same manner as the mounting of the chip S1 on the substrate 70, the second-stage chip S2 is mounted on the surface of the chip S1. In addition, the structure 60 shown in FIG. 7 is manufactured by mounting the chips S3 and S4 of the third and fourth stages. After electrically connecting the chips S1, S2, S3, S4 and the substrate 70 with wires W1, W2, W3, and W4 (see FIG. 8), the semiconductor element and the wire are connected by the sealing layer 50 By sealing, the semiconductor device 100 shown in FIG. 3 is completed.

As mentioned above, although embodiment of this indication was described in detail, this invention is not limited to the said embodiment. For example, in the said embodiment, although the film 10 provided with the base material layer 1, the adhesive layer 3, and the adhesive bond layer 5 in this order was illustrated, it is equipped with the adhesive bond layer 5 It may be an aspect not to do. Moreover, the film 10 may further be equipped with the cover film (not shown) which covers the adhesive bond layer 5. As shown in FIG.

Example

Hereinafter, the present disclosure will be described in more detail based on Examples, but the present invention is not limited to these Examples. In addition, unless there is a special description, all chemicals used reagents.

<Production Example 1>

[Synthesis of acrylic resin (A-1)]

The following components were placed in a flask with a capacity of 2000 mL in which a three-one motor, a stirring blade, and a nitrogen introduction tube were installed.

・Ethyl acetate (solvent): 635 parts by mass

· 2-ethylhexyl acrylate: 395 parts by mass

· 2-hydroxyethyl acrylate: 100 parts by mass

·Methacrylic acid: 5 parts by mass

Azobisisobutyronitrile: 0.08 bil parts

After stirring the contents until sufficiently uniform, bubbling was performed at a flow rate of 500 mL/min for 60 minutes to degas the dissolved oxygen in the system. The temperature was raised to 78° C. for 1 hour, and polymerization was performed for 6 hours after the temperature was raised. Next, the reaction solution is transferred to a pressure cooker with a capacity of 2000 mL installed with a three-one motor, a stirring blade, and a nitrogen inlet tube, heated at 120 ° C and 0.28 MPa for 4.5 hours, and then cooled to room temperature (25 ° C, the same below). did.

Next, 490 mass parts of ethyl acetate was added, it stirred, and the content was diluted. After adding 0.10 mass parts of dioctyl tin dilaurate to this as a urethanization catalyst, 2-methacryloyloxyethyl isocyanate (The Showa Denko Co., Ltd. make, Karenz MOI (brand name)) was added After adding 48.6 mass parts and making it react at 70 degreeC for 6 hours, it cooled to room temperature. Subsequently, ethyl acetate was further added, and the nonvolatile matter content in the acrylic resin solution was adjusted to be 35 mass %, and a solution containing the acrylic resin (A-1) having a functional group capable of chain polymerization of Production Example 1 was obtained.

The solution containing the acrylic resin (A-1) obtained as mentioned above was vacuum-dried at 60 degreeC overnight. The solid content thus obtained was subjected to elemental analysis with a fully automatic elemental analyzer (manufactured by Elementa, trade name: varioEL), and the content of the functional group derived from the introduced 2-methacryloxyethyl isocyanate was calculated from the nitrogen content. As a result, 0.50 mmol/g.

Moreover, the weight average molecular weight of polystyrene conversion of acrylic resin (A-1) was calculated|required using the following apparatus. That is, SD-8022/DP-8020/RI-8020 manufactured by Tosoh Corporation was used, and Gelpack GL-A150-S/GL-A160-S manufactured by Hitachi Kasei Corporation was used for the column, and tetrahydrofuran was used as the eluent. GPC measurements were performed. As a result, the weight average molecular weight in terms of polystyrene was 800,000. The hydroxyl value and acid value measured based on the method of JISK0070 were 56.1 mgKOH/g and 6.5 mgKOH/g. These results are put together in Table 1, and are shown.

<Production Example 2>

[Synthesis of acrylic resin (A-2)]

Except for changing the raw material monomer composition shown in Production Example 1 in Table 1 to the raw monomer composition shown in Production Example 2 in Table 1, in the same manner as in Production Example 1, containing the acrylic resin (A-2) of Production Example 2 A solution was obtained. Table 1 shows the measurement results of the properties of the acrylic resin (A-2) of Production Example 2.

<Production Example 3>

[Synthesis of acrylic resin (A-3)]

Except for changing the raw material monomer composition shown in Production Example 1 in Table 1 to the raw monomer composition shown in Production Example 3 in Table 1, in the same manner as in Production Example 1, containing the acrylic resin (A-3) of Production Example 3 A solution was obtained. Table 1 shows the measurement results of the properties of the acrylic resin (A-3) of Production Example 3.

<Production Example 4>

[Synthesis of acrylic resin (A-4)]

Except for changing the raw material monomer composition shown in Production Example 1 in Table 1 to the raw monomer composition shown in Production Example 4 in Table 1, in the same manner as in Production Example 1, containing the acrylic resin (A-4) of Production Example 2 A solution was obtained. Table 1 shows the measurement results of the properties of the acrylic resin (A-4) of Production Example 4.

<Production Example 5>

[Synthesis of acrylic resin (A-5)]

Except for changing the raw material monomer composition shown in Production Example 1 in Table 1 to the raw monomer composition shown in Production Example 5 in Table 1, in the same manner as in Production Example 1, containing the acrylic resin (A-5) of Production Example 5 A solution was obtained. Table 1 shows the measurement results of the properties of the acrylic resin (A-5) of Production Example 5.

[Table 1]

<Example 1>

[Production of dicing film (adhesive layer)]

By mixing the following components, the varnish (varnish for adhesive layer formation) of an active energy ray hardening-type adhesive was prepared (refer Table 2). The quantity of ethyl acetate (solvent) was adjusted so that total solid content of a varnish might be set to 25 mass %.

- Solution containing acrylic resin (A-1) of Production Example 1: 100 parts by mass (solid content)

-Photoinitiator (B-1) (1-hydroxycyclohexyl-phenyl-ketone (manufactured by Ciba Specialty Chemicals, Irgacure 184, "Irgacure" is a registered trademark): 1.0 mass part

Crosslinking agent (C-1) (polyfunctional isocyanate (reactant of tolylene diisocyanate and trimethylol propane), manufactured by Nippon Polyurethane Kogyo Co., Ltd., Colonate L, solid content: 75%) : 8.0 parts by mass (solid content)

・Ethyl acetate (solvent)

The polyethylene terephthalate film (450 mm in width, 500 mm in length, 38 micrometers in thickness) to which the mold release process was given to one surface was prepared. After apply|coating the varnish of the active energy ray hardening type adhesive to the surface to which the mold release process was performed using the applicator, it dried at 80 degreeC for 5 minutes. Thereby, the laminated body (dicing film) which consists of a polyethylene terephthalate film and the 30 micrometers-thick adhesive layer formed thereon was obtained.

The polyolefin film (450 mm in width, 500 mm in length, 80 micrometers in thickness) to which the corona treatment was given to one surface was prepared. The surface to which the corona treatment was given and the adhesive layer of the said laminated body were bonded together at room temperature. Next, the pressure-sensitive adhesive layer was transferred to the polyolefin film (cover film) by pressing the rubber roll in one direction. Then, the dicing film with a cover film was obtained by leaving it to stand at room temperature for 3 days.

[Production of die bonding film (adhesive layer)]

By mixing the following components, the varnish for adhesive bond layer formation was prepared. First, with respect to the mixture containing the following components, cyclohexanone (solvent) was added, and after stirring and mixing, it further kneaded using the bead mill for 90 minutes.

・Epoxy resin (YDCN-700-10 (trade name), manufactured by Nippon-Sumikin Chemical Co., Ltd., cresol novolak type epoxy resin, epoxy equivalent: 210, molecular weight: 1200, softening point: 80°C): 14 parts by mass

-Phenolic resin (Milex XLC-LL (trade name), Mitsui Chemicals Co., Ltd. make, phenol resin, hydroxyl equivalent: 175, water absorption: 1.8%, heating weight loss rate at 350 degreeC: 4%): 23 mass parts

· Silane coupling agent (NUC A-189 (trade name), manufactured by NUC Corporation, γ-mercaptopropyl trimethoxysilane): 0.2 parts by mass

· Silane coupling agent (NUCA-1160 (trade name), manufactured by Nippon Unica Co., Ltd., γ-ureidopropyltriethoxysilane): 0.1 parts by mass

· Filler (SC2050-HLG (trade name), manufactured by Admatex Co., Ltd., silica, average particle size 0.500 µm): 32 parts by mass

After adding the following components to the mixture obtained as described above, a varnish for forming an adhesive layer (at least a reactive group-containing (meth)acrylic copolymer, a curing accelerator, and a filler through the steps of stirring and mixing and vacuum degassing) varnish of the adhesive composition) was obtained.

・Epoxy group-containing acrylic copolymer (HTR-860P-3 (trade name), manufactured by Nagase Chemtex Co., Ltd., weight average molecular weight 800,000): 16 parts by mass

-Cure accelerator (Curesol 2PZ-CN (trade name), Shikoku Kasei Kogyo Co., Ltd. make, 1-cyanoethyl-2-phenylimidazole, "Curesol" is a registered trademark): 0.1 mass part

The polyethylene terephthalate film (thickness 35 micrometers) to which the mold release process was given to one surface was prepared. After apply|coating the varnish for adhesive bond layer formation to the surface to which the mold release process was performed using the applicator, it heat-dried at 140 degreeC for 5 minutes. Thereby, the laminated body (die-bonding film) which consists of a polyethylene terephthalate film (carrier film) and the 25-micrometer-thick adhesive bond layer (B-stage state) formed thereon was obtained.

[Production of dicing and die-bonding integrated film]

The die-bonding film which consists of an adhesive bond layer and a carrier film was cut circularly with a diameter of 335 mm for every carrier film. After sticking the dicing film which peeled the polyethylene terephthalate film to the cut die-bonding film at room temperature, it was left to stand at room temperature for 1 day. Then, the dicing film was cut into the circular shape of diameter 370mm, and the laminated body was obtained. Thus, the ultraviolet-ray was irradiated as follows to the area|region (1st area|region of an adhesive layer) corresponding to the sticking position of the wafer in the adhesive bond layer of the obtained laminated body. That is, using a pulsed xenon lamp, ultraviolet rays were partially irradiated with an irradiation amount of 70 W and 300 mJ/cm ² . In addition, ultraviolet irradiation was performed with respect to the part with an inner diameter of 318 mm from the center of a film using a dark film. In this way, the dicing and die-bonding integrated film of Example 1 for using in the various evaluation tests mentioned later was obtained.

[Evaluation Test]

(Measurement of cuff width)

The dicing and die-bonding integrated film of Example 1 was bonded to a wafer (silicon, 12 inches in diameter, 50 µm in thickness) by heating at 80°C for 10 seconds. Then, in the above-mentioned "production of a dicing film (adhesive layer)" so that a plurality of rectangular chips of a predetermined size can be obtained under the following dicing conditions, when the adhesive layer is transferred to the polyolefin film (cover film), the rubber Notches were placed at predetermined intervals in the same direction as the direction in which the roll was operated, and further notches were placed at predetermined intervals in a direction orthogonal to the direction in which the rubber roll was operated, and the pieces were divided into a plurality of chips with adhesive pieces.

・Dicer: manufactured by DISCO, DFD-6361

・Blade: manufactured by DISCO, ZH05-SD4000-N1-70-BB

・Blade rotation speed: 40000rpm

Dicing speed: 30mm/s

· Notch depth from the surface of the pressure-sensitive adhesive layer to the substrate layer: 20 μm

・Cut mode: down cut

・Chip size: 10mm×10mm

In the separated wafer, in the above-mentioned "production of a dicing film (adhesive layer)", when the pressure-sensitive adhesive layer was transferred to the polyolefin film (cover film), the direction in which the rubber roll was operated is perpendicular to the directions Ch1 and Ch1 The direction was made into the direction Ch2, and the kerf width WCh1 between adjacent chips in the direction Ch1 and the kerf width WCh2 between adjacent chips in the direction Ch2 were measured using an optical microscope. In the measurement, three measurement points were taken, and the average value of these was calculated|required as a cuff width. A result is shown in Table 2.

(Measurement of blade width)

The dicing die-bonding integrated film of Example 1 was bonded together by heating at 80 degreeC for 10 second on a 400-micrometer-thick wafer. Thereafter, the notch depth from the surface of the wafer to the adhesive layer was set to 100 µm, and the notch was placed once under the same conditions as the dicing conditions for the measurement of the kerf width described above. Next, the wafer was cut|disconnected so that it may be orthogonal to this notch, and the cut surface in the obtained cut|disconnection was observed. The width of the position at a height of 20 µm from the lowermost part of the dicing was measured as the blade width. The blade width was 20.8 µm. In the evaluation test, this value was used as the blade width to calculate the ratio of the kerf width to the blade width.

(Calculation of the ratio of the kerf width to the blade width)

From the obtained kerf width and blade width, the ratio of the kerf width to the blade width was calculated. A result is shown in Table 2.

<Examples 2 to 11 and Comparative Examples 1 and 2>

The composition and ultraviolet irradiation amount of the pressure-sensitive adhesive layer shown in Example 1 of Table 2 were changed to the composition and ultraviolet irradiation amount of the pressure-sensitive adhesive layer shown in each Example and each comparative example of Table 2, Table 3, and Table 4, and An evaluation test was performed in the same manner as in Example 1, except that the dicing conditions shown in Example 1 were changed to the dicing conditions shown in Examples and Comparative Examples in Tables 2, 3, and 4 . Further, the photopolymerization initiator (B-2) is 2-hydroxy-1-{4-[4-(2-hydroxy-2-methyl-propionyl)-benzyl]-phenyl}-2-methyl-propane- 1-on (manufactured by Ciba Specialty Chemicals Co., Ltd., Irgacure 127, "Irgacure" is a registered trademark). A result is shown in Table 2, Table 3, and Table 4.

[Table 2]

[Table 3]

[Table 4]

As shown in Table 2, Table 3, and Table 4, it has a pressure-sensitive adhesive layer made of an active energy ray-curable pressure-sensitive adhesive, and the content of the functional group in the (meth)acrylic resin is 0.4 mmol/g or more of Examples 1 to 11 In the case of using the dicing and die-bonding integrated film, with respect to that the kerf width is 75% or more with respect to the blade width, when using the dicing and die bonding integrated film of Comparative Examples 1 and 2, which does not satisfy these requirements, The kerf width was less than 75% of the blade width. From these results, it was confirmed that the dicing and die-bonding integrated film of the present disclosure can sufficiently secure the kerf width even when a narrow blade is used.

One… base layer
3… adhesive layer
3a… first area
3b… second area
5… adhesive layer
5P… adhesive piece
5C… cured product
8… DAF
10… Dicing and die-bonding integrated film (film)
20… cut body
42… pin
44… suction collet
50… sealing layer
60… struct
70… Board
100… semiconductor device
DR… dicing ring
F1… side 1
F2… 2nd side
Rw… area
S1, S2, S3, S4, S… chip
W… wafer
W1, W2, W3, W4… wire
WCh1, WCh2... cuff width

Claims (10)

A base layer, a pressure-sensitive adhesive layer made of an active energy ray-curable pressure-sensitive adhesive having a first surface facing the base layer and a second surface opposite to the first surface, and a central portion of the second surface of the pressure-sensitive adhesive layer A first step of preparing a dicing die-bonding integrated film having an adhesive layer provided to cover;
a second step of attaching a wafer to the adhesive layer of the dicing die-bonding integrated film and attaching a dicing ring to the second surface of the pressure-sensitive adhesive layer;
A third step of forming a cut body by dividing the wafer into a plurality of chips together with the adhesive layer and the pressure-sensitive adhesive layer by blade dicing using a blade;
a fourth step of picking up the chip from the pressure-sensitive adhesive layer of the cut body together with the adhesive piece formed by separating the adhesive layer into pieces;
a fifth step of mounting the chip on a substrate or another chip via the adhesive piece;
The pressure-sensitive adhesive layer has a first region in the adhesive layer corresponding to a region to which the wafer is affixed, and a second region to which the dicing ring is affixed,
The first region is a region in a state in which adhesive force is lowered compared to that of the second region by irradiation of active energy rays,
In the third step, the width of the cuff formed in the pressure-sensitive adhesive layer of the cut body by the blade dicing is 75% or more of the width of the blade, the method of manufacturing a semiconductor device. The method according to claim 1,
The width of the blade is 10-50 μm, a method of manufacturing a semiconductor device. The method according to claim 1 or 2,
The plurality of chips have a square or rectangular shape and have an area of 200 mm ² or less. a base layer,
A pressure-sensitive adhesive layer made of an active energy ray-curable pressure-sensitive adhesive having a first surface facing the base layer and a second surface opposite to the first surface;
and an adhesive layer provided to cover the central portion of the second surface,
The pressure-sensitive adhesive layer has a first region including at least a region corresponding to the wafer affixing position in the adhesive layer, and a second region positioned to surround the first region,
The first region is a region in a state in which adhesive force is lowered compared to that of the second region by irradiation of active energy rays,
The active energy ray-curable pressure-sensitive adhesive includes a (meth)acrylic resin having a functional group capable of chain polymerization,
The functional group is at least one selected from an acryloyl group and a methacryloyl group,
The dicing die-bonding integrated film, wherein the content of the functional group in the (meth)acrylic resin is 0.4 mmol/g or more. 5. The method according to claim 4,
The active energy ray-curable pressure-sensitive adhesive further comprises a crosslinking agent,
The content of the said crosslinking agent with respect to the total mass of the said active energy ray-curable adhesive is 0.1-15 mass %, The dicing die-bonding integrated film. 6. The method of claim 5,
The dicing and die-bonding integrated film, wherein the crosslinking agent is a reaction product of a polyfunctional isocyanate having two or more isocyanate groups in one molecule and a polyhydric alcohol having three or more hydroxyl groups in one molecule. 7. The method according to any one of claims 4 to 6,
The dicing and die-bonding integrated film, wherein the adhesive layer comprises an adhesive composition containing a reactive group-containing (meth)acrylic copolymer, a curing accelerator, and a filler. 8. The method according to any one of claims 4 to 7,
A dicing and die-bonding integrated film applied to a manufacturing process of a semiconductor device including a step of dividing a wafer into a plurality of chips having an area of 200 mm ² or less. As a manufacturing method of the dicing die-bonding integrated film of any one of Claims 4-8,
A step of producing a laminate comprising a pressure-sensitive adhesive layer made of an active energy ray-curable pressure-sensitive adhesive on the surface of the base layer, and the adhesive layer formed on the surface of the pressure-sensitive adhesive layer;
A method for producing a dicing and die-bonding integrated film comprising the step of irradiating an active energy ray to a region serving as the first region of the pressure-sensitive adhesive layer included in the laminate in this order. As a manufacturing method of the dicing die-bonding integrated film of any one of Claims 4-8,
A step of forming a pressure-sensitive adhesive layer comprising a composition in which adhesive strength is lowered by irradiation with active energy rays on the surface of the base layer;
a step of irradiating an active energy ray to a region serving as the first region of the pressure-sensitive adhesive layer;
The manufacturing method of the dicing die-bonding integrated film which comprises the process of laminating|stacking the said adhesive bond layer on the surface of the said adhesive layer after irradiating the said active energy ray in this order.

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