KR20220100885A - Manufacturing method of semiconductor device, dicing and die-bonding integrated film, and manufacturing method thereof - Google Patents

Abstract

The dicing and die-bonding integrated film according to an aspect of the present disclosure is disposed between the base layer, the adhesive layer, and the base layer and the adhesive layer, and the adhesive force to the adhesive layer is lowered in advance by irradiation with active energy rays. Having a pressure-sensitive adhesive layer having a first area with a temperature of 23 ° C, the adhesive force of the first area to the adhesive layer is 6.0 N/25 mm or more and 12.5 N, measured under the conditions of a peel angle of 30 ° and a peel rate of 60 mm / min at a temperature of 23 ° C. /25mm or less.

Description

Manufacturing method of semiconductor device, dicing and die-bonding integrated film, and manufacturing method thereof

The present disclosure relates to a method for manufacturing a semiconductor device, a dicing/die-bonding integrated film, and a method for manufacturing the same.

A semiconductor device is manufactured through the following process. First, a dicing process is performed in the state which affixed the adhesive film for dicing on the wafer. After that, an expand process, a pick-up process, a die bonding process, etc. are implemented.

In the manufacturing process of a semiconductor device, the film called a dicing die-bonding integrated film is used. This film has a structure in which a base material layer, an adhesive layer, and an adhesive bond layer were laminated|stacked in this order, and is used as follows, for example. First, the wafer is diced in the state which affixed the surface on the side of an adhesive bond layer with respect to a wafer, and fixed the wafer with a dicing ring. As a result, the wafer is divided into multiple chips. Then, after weakening the adhesive force of the adhesive layer with respect to an adhesive bond layer by irradiating an ultraviolet-ray with respect to an adhesive layer, a chip is picked up from the adhesive layer together with the adhesive bond piece from which the adhesive bond layer is separated into pieces. Thereafter, a semiconductor device is manufactured through a step of mounting the chip on a substrate or the like via an adhesive piece. In addition, the laminated body which consists of the chip|tip obtained through a dicing process, and the adhesive bond piece adhered to this is called a chip|tip with an adhesive bond piece.

As described above, the pressure-sensitive adhesive layer (dicing film) whose adhesive strength is weakened by irradiation with ultraviolet rays is called UV-curable. On the other hand, in the manufacturing process of a semiconductor device, an ultraviolet-ray is not irradiated and the adhesive layer of the state in which adhesive force is constant is called a pressure-sensitive type. A dicing and die-bonding integrated film having a pressure-sensitive adhesive layer has the advantage that a user (mainly a semiconductor device manufacturer) does not need to perform a step of irradiating ultraviolet rays, and there is no need for equipment for this purpose. . While patent document 1 can be said to be a UV curing type in that an adhesive layer contains the component hardened by ultraviolet-ray, ultraviolet-ray is previously irradiated only to predetermined part of an adhesive layer, and a user in the manufacturing process of a semiconductor device Disclosed is a dicing die-bonding film which can also be called a pressure-sensitive type because it does not need to be irradiated with ultraviolet rays.

Patent Document 1: Japanese Patent Publication No. 4443962

The pressure-sensitive adhesive layer of the dicing die-bonding integrated film is required to have high adhesion to the adhesive layer and the dicing ring in the dicing process. If the adhesive force of the adhesive layer is insufficient, peeling occurs between the adhesive layer and the adhesive layer according to the high-speed rotation of the dicing blade, and the adhesive layer is broken, and the pieces of the adhesive layer are scattered. This phenomenon is called "DAF blow". In addition, DAF means a die attach film. Alternatively, a phenomenon in which the dicing ring is peeled off from the pressure-sensitive adhesive layer by the flow of cutting water (hereinafter, this phenomenon is referred to as "ring peeling") occurs. Moreover, in recent years, the process of separating a wafer and adhesive bond layer into pieces by cooling expand is increasing with wafer thinning. If the adhesive strength of the pressure-sensitive adhesive layer is insufficient even in the cooling expand step, the outer periphery of the DAF is broken due to the impact and stress at the time of expansion, resulting in a phenomenon in which the pieces are scattered (DAF flying), or the edge of the chip with the adhesive piece And peeling of an adhesive layer (chip edge peeling) arises, and a trouble may generate|occur|produce in a subsequent process.

By the way, the user of the dicing die-bonding integrated film has the request|requirement of irradiating an activation energy ray (for example, ultraviolet-ray) under the conditions constant as much as possible. Therefore, for example, even if the adhesive force of the pressure-sensitive adhesive layer is changed according to a change in the prescription of the dicing die-bonding integrated film, it is difficult to request the user to flexibly adjust the irradiation conditions of the activation energy ray. .

The present disclosure provides a dicing/die-bonding integrated film and a method for manufacturing the same, which is convenient for users to use and is useful for efficiently manufacturing a semiconductor device. In addition, the present disclosure provides a method for manufacturing a semiconductor device using the dicing and die-bonding integrated film.

One aspect of the present disclosure relates to a method of manufacturing a semiconductor device. This manufacturing method includes the following steps.

(A) A dicing and die-bonding integrated film having a first region in which a base layer, a pressure-sensitive adhesive layer, and an adhesive layer are laminated in this order, and the pressure-sensitive adhesive layer has a first region in which the adhesive force to the adhesive layer is lowered in advance by irradiation with active energy rays. process of preparing

(B) Stealth dicing or a process of half-cutting the wafer with a blade

(C) Step of attaching the wafer to the region corresponding to the first region in the adhesive layer

(D) A step of obtaining a chip with an adhesive piece in which a wafer and an adhesive layer are separated into pieces by expanding the base layer under cooling conditions

(E) The process of reducing the adhesive force of the adhesive layer with respect to the chip|tip with an adhesive bond piece by irradiating an activation energy ray to an adhesive layer

(F) The process of picking up the chip|tip with an adhesive bond piece from the said adhesive layer in the state which expanded the base material layer

(G) Step of mounting the chip with the adhesive piece on the substrate or other chip

And, the dicing and die-bonding integrated film in the step (A) has an adhesive force of 6.0 in the first region to the adhesive layer, measured under the conditions of a peeling angle of 30° and a peeling rate of 60 mm/min at a temperature of 23°C N/25mm or more and 12.5N/25mm or less.

According to the said manufacturing method, the dicing die-bonding integrated film in which the adhesive force of the adhesive layer with respect to an adhesive bond layer was adjusted in advance by irradiation of an active energy ray (irradiation for the 1st time), and the activation energy in (E) process The adhesive force of the adhesive layer with respect to the chip|tip with an adhesive bond piece is reduced by irradiation of a line (irradiation of the 2nd time). For this reason, generation|occurrence|production of the DAF blowout or chip-edge peeling in (D) process can fully be suppressed, and the outstanding pick-up property can be achieved in (F) process.

(D) The chip|tip with an adhesive bond piece obtained at the process may be a comparatively large thing. That is, the chip with an adhesive piece may have a square or rectangular shape in a plan view and may have a side of 6.0 mm or more. A chip with a comparatively large size is easy to produce curvature, and it originates in this, and the chip|tip with an adhesive bond piece peels in (D) process, In (F) process, a chip|tip cracks or a pick-up defect is easy to generate|occur|produce. According to the manufacturing method which concerns on this indication, these troubles in (F) process can fully be suppressed.

The adhesive layer may have a 2nd area|region whose adhesive force with respect to an adhesive bond layer is larger than a 1st area|region. In this case, the dicing ring can be affixed to a 2nd area|region simultaneously with (C) process or before (D) process.

The dicing and die-bonding integrated film according to an aspect of the present disclosure is disposed between the base layer, the adhesive layer, and the base layer and the adhesive layer, and the adhesive force to the adhesive layer is lowered in advance by irradiation with active energy rays. Having a pressure-sensitive adhesive layer having a first area with a temperature of 23 ° C, the adhesive force of the first area to the adhesive layer is 6.0 N/25 mm or more and 12.5 N, measured under the conditions of a peel angle of 30 ° and a peel rate of 60 mm / min at a temperature of 23 ° C. /25mm or less.

In this dicing and die-bonding integrated film, the adhesive force of the adhesive with respect to an adhesive bond layer is adjusted in advance by irradiation of an active energy ray. For example, even if the adhesive strength of the pressure-sensitive adhesive layer is changed due to a change in the prescription of the dicing die-bonding integrated film, the manufacturer of the film adjusts the adhesive strength in advance and provides it to the user, so that the user can adjust the irradiation conditions of the activation energy ray. Without change, manufacturing of the semiconductor device can be continued under the previous conditions.

The dicing and die-bonding integrated film is, from the viewpoint of excellent pick-up property, after irradiating an ultraviolet ray in an amount of 150 mJ/cm ² to the first region, a peeling angle of 30° and a peeling rate of 60 mm/min at a temperature of 23° C. It is preferable that the adhesive force of the said 1st area|region with respect to the adhesive bond layer measured by conditions is 1.2 N/25 mm or less. The dicing and die-bonding integrated film can be applied to a semiconductor device manufacturing process including a step of dividing a wafer into a plurality of chips having an area of 30 to 250 mm ² .

One aspect of the present disclosure relates to a method of manufacturing the dicing die-bonding integrated film. A first aspect of this manufacturing method is to produce a laminate comprising a pressure-sensitive adhesive layer comprising a composition in which adhesive strength is lowered by irradiation with active energy rays on the surface of the base layer, and an adhesive layer formed on the surface of the pressure-sensitive adhesive layer A process and the process of irradiating an active energy ray to the area|region used as the 1st area|region of the adhesive layer contained in a laminated body are included in this order. On the other hand, the second aspect of this manufacturing method is a step of forming a pressure-sensitive adhesive layer comprising a composition in which adhesive strength is lowered by irradiating active energy rays on the surface of the base layer; The process of irradiating an energy ray and the process of laminating|stacking an adhesive bond layer on the surface of the said adhesive layer after irradiating an active energy ray are included in this order.

Advantageous Effects of Invention According to the present disclosure, a dicing and die-bonding integrated film and a method for manufacturing the same are provided, which are convenient for users to use and useful for efficiently manufacturing a semiconductor device. Further, according to the present disclosure, a method for manufacturing a semiconductor device using the dicing and die-bonding integrated film is provided.

Fig. 1 (a) is a plan view showing one embodiment of a dicing and die-bonding integrated film, and Fig. 1 (b) is a schematic cross-sectional view taken along line BB shown in Fig. 1 (a).
It is a schematic diagram which shows the state by which the dicing ring was affixed on the periphery of the adhesive layer of the dicing die-bonding integrated film, and the wafer was affixed on the surface of the adhesive bond layer.
It is sectional drawing which shows typically a mode that the 30 degree peeling strength of the adhesive layer with respect to an adhesive bond layer is being measured.
4 is a schematic cross-sectional view of an embodiment of a semiconductor device.
Fig. 5 (a) and Fig. 5 (b) are cross-sectional views schematically showing a process of manufacturing a chip with an adhesive piece.
6(a) to 6(c) are cross-sectional views schematically illustrating a process of manufacturing a chip with an adhesive piece.
7A and 7B are cross-sectional views schematically illustrating a process of manufacturing the semiconductor device shown in FIG. 4 .

EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this indication is described in detail, referring drawings. In the following description, the same code|symbol is attached|subjected to the same or equivalent part, and the overlapping description is abbreviate|omitted. In addition, this invention is not limited to the following embodiment. In this specification, (meth)acryl means acryl or methacryl.

<Dicing and die-bonding integrated film>

Fig.1 (a) is a top view which shows the dicing die-bonding integrated film which concerns on this embodiment, (b) is a schematic sectional drawing taken along the line B-B of Fig.1. The dicing and die-bonding integrated film 10 (hereinafter, simply referred to as "film 10" in some cases) has a base layer 1 and a first surface F1 facing the base layer 1 ) and an adhesive layer 3 having a second surface F2 on the opposite side, and an adhesive layer 5 provided to cover the central portion of the second surface F2 of the pressure sensitive adhesive layer 3 in this order . In this embodiment, although the aspect in which one laminated body of the adhesive layer 3 and the adhesive bond layer 5 was formed on the square base material layer 1 was illustrated, the base material layer 1 has a predetermined length (for example, , 100 m or more), and the laminated body of the adhesive layer 3 and the adhesive bond layer 5 may be arrange|positioned at predetermined intervals so that it may line up in the longitudinal direction.

(Adhesive layer)

The adhesive layer 3 surrounds the 1st area|region 3a which contains at least the area|region Rw corresponding to the pasting position of the wafer W in the adhesive bond layer 5, and the 1st area|region 3a. a second region 3b located therein. A broken line in Fig. 1A indicates the boundary between the first region 3a and the second region 3b. The 1st area|region 3a and the 2nd area|region 3b consist of the same composition before irradiation of an active energy ray. The 1st area|region 3a is an area|region in the state in which adhesive force fell compared with the 2nd area|region 3b by irradiating active energy rays, such as an ultraviolet-ray. The 2nd area|region 3b is the area|region to which the dicing ring DR is pasted (refer FIG. 2). The second region 3b is a region not irradiated with an active energy ray, and has high adhesion to the dicing ring DR.

The adhesive force of the 1st area|region 3a with respect to the adhesive bond layer 5 is 6.0N/25mm or more and 12.5N/25mm or less. This adhesive force is a 30 degree peeling strength measured on the conditions of 30 degree peeling angle and 60 mm/min of peeling speed|rate in temperature 23 degreeC. 3 is a cross-sectional view schematically showing a state in which the 30° peeling strength of the pressure-sensitive adhesive layer 3 is measured in a state in which the adhesive layer 5 of the measurement sample (width 25 mm × length 100 mm) is fixed to the support plate 80 . . By making the adhesive force (30 degree peeling strength) of the 1st area|region 3a with respect to the adhesive bond layer 5 into the said range, the DAF fluttering or chip-edge peeling at the time of cooling expansion can fully be suppressed. Thereby, it becomes possible to manufacture a semiconductor device with a sufficiently high yield. 6.5N/25mm or 7.0N/25mm may be sufficient as the lower limit of this adhesive force, and 11.5N/25mm or 10.5N/25mm may be sufficient as an upper limit.

The adhesive force of the first region 3a to the adhesive layer 5 is 1.2N after the first region 3a is irradiated with positive ultraviolet rays (main wavelength: 365 nm) of 150 mJ/cm ² . It is preferable that they are /25 mm or less, and 0.4 N/25 mm or more and 1.2 N/25 mm or less or 0.5 N/25 mm or more and 1.1 N/25 mm or less may be sufficient. According to the film 10 provided with such an adhesive layer 3, the outstanding pick-up property can be achieved. In addition, this adhesive force is the 30 degree peeling strength measured on the conditions of 30 degrees of peeling angles and 60 mm/min of peeling rates in the temperature of 23 degreeC similarly to the above (refer FIG. 3).

The adhesive force of the second region 3b to the stainless substrate is preferably 0.2 N/25 mm or more. This adhesive force is a 90 degree peeling strength measured on the conditions of 90 degrees peeling angle and 50 mm/min of peeling speed|rate in the temperature of 23 degreeC. When this adhesive force is 0.2 N/25 mm or more, ring peeling at the time of dicing can fully be suppressed. The lower limit of this adhesive force may be 0.3 N/25 mm or 0.4 N/25 mm, and the upper limit may be, for example, 2.0 N/25 mm or 1.0 N/25 mm.

The adhesive layer before active energy ray irradiation consists of an adhesive composition containing (meth)acrylic-type resin, a photoinitiator, and a crosslinking agent, for example. The second region 3b to which the active energy ray is not irradiated has the same composition as the pressure-sensitive adhesive layer before irradiated with the active energy ray. Hereinafter, the component contained in an adhesive composition is demonstrated in detail.

[(meth)acrylic resin]

The pressure-sensitive adhesive composition contains a (meth)acrylic resin having a functional group capable of chain polymerization, and it is preferable that the functional group is at least one selected from an acryloyl group and a methacryloyl group. Content of the said functional group in the adhesive layer before active energy ray irradiation is 0.1-1.2 mmol/g, and 0.3-1.0 mmol/g or 0.5-0.8 mmol/g may be sufficient, for example. When content of the said functional group is 0.1 mmol/g or more, it is easy to form the area|region (1st area|region 3a) in which adhesive force fell moderately by irradiation of an active energy ray, On the other hand, when it is 1.2 mmol/g or less, excellent pick-up property easy to achieve

The (meth)acrylic resin can be obtained by synthesizing it by a known method. Examples of the synthesis method include a solution polymerization method, a suspension polymerization method, an emulsion polymerization method, a bulk polymerization method, a precipitation polymerization method, a gas phase polymerization method, a plasma polymerization method, and a supercritical polymerization method. can Examples of the polymerization reaction include radical polymerization, cationic polymerization, anionic polymerization, living radical polymerization, living cationic polymerization, living anionic polymerization, coordination polymerization, immortal polymerization, etc., ATRP (atom transfer radical polymerization) and RAFTP (reversible addition cleavage) chain transfer polymerization) can also be mentioned. Among these, synthesis by radical polymerization using the solution polymerization method has advantages such as good economic feasibility, high reaction rate, ease of polymerization control, and the like, as well as being able to blend the resin solution obtained by polymerization as it is.

Here, the method of obtaining a (meth)acrylic-type resin by radical polymerization using a solution polymerization method is taken as an example, and the synthesis method of a (meth)acrylic-type resin is demonstrated in detail.

As a monomer used when synthesize|combining (meth)acrylic-type resin, if it has one (meth)acryloyl group in 1 molecule, there will be no restriction|limiting in particular. Specific examples thereof include methyl (meth) acrylate, ethyl (meth) acrylate, butyl (meth) acrylate, isobutyl (meth) acrylate, tert-butyl (meth) acrylate, butoxyethyl (meth) acrylate , isoamyl (meth) acrylate, hexyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, heptyl (meth) acrylate, octyl heptyl (meth) acrylate, nonyl (meth) acrylate, decyl ( Meth) acrylate, undecyl (meth) acrylate, lauryl (meth) acrylate, tridecyl (meth) acrylate, tetradecyl (meth) acrylate, pentadecyl (meth) acrylate, hexadecyl (meth) Acrylate, stearyl (meth)acrylate, behenyl (meth)acrylate, methoxypolyethylene glycol (meth)acrylate, ethoxypolyethylene glycol (meth)acrylate, methoxypolypropylene glycol aliphatic (meth)acrylates such as (meth)acrylate, ethoxypolypropylene glycol (meth)acrylate, and mono(2-(meth)acryloyloxyethyl)succinate; Cyclopentyl (meth) acrylate, cyclohexyl (meth) acrylate, dicyclopentanyl (meth) acrylate, dicyclopentenyl (meth) acrylate, isobornyl (meth) acrylate, mono (2- ( alicyclic (meth)acrylates such as meth)acryloyloxyethyl)tetrahydrophthalate and mono(2-(meth)acryloyloxyethyl)hexahydrophthalate; Benzyl (meth) acrylate, phenyl (meth) acrylate, o-biphenyl (meth) acrylate, 1-naphthyl (meth) acrylate, 2-naphthyl (meth) acrylate, phenoxyethyl (meth) Acrylate, p-cumylphenoxyethyl (meth)acrylate, o-phenylphenoxyethyl (meth)acrylate, 1-naphthoxyethyl (meth)acrylate, 2-naphthoxyethyl (meth)acrylate, phenoxy Cypolyethylene glycol (meth)acrylate, nonylphenoxypolyethylene glycol (meth)acrylate, phenoxypolypropylene glycol (meth)acrylate, 2-hydroxy-3-phenoxypropyl (meth) Acrylate, 2-hydroxy-3-(o-phenylphenoxy)propyl (meth)acrylate, 2-hydroxy-3-(1-naphthoxy)propyl (meth)acrylate, 2-hydroxy-3 Aromatic (meth)acrylates, such as -(2-naphthoxy)propyl (meth)acrylate; Heterocyclic (meth), such as 2-tetrahydrofurfuryl (meth)acrylate, N-(meth)acryloyloxyethyl hexahydrophthalimide, and 2-(meth)acryloyloxyethyl-N-carbazole ) acrylates, caprolactone-modified products thereof, ω-carboxy-polycaprolactone mono (meth) acrylate, glycidyl (meth) acrylate, α-ethyl glycidyl (meth) acrylate, α-propyl glycidyl Cydyl (meth) acrylate, α-butyl glycidyl (meth) acrylate, 2-methylglycidyl (meth) acrylate, 2-ethyl glycidyl (meth) acrylate, 2-propyl glycidyl (meth)acrylate, 3,4-epoxybutyl (meth)acrylate, 3,4-epoxyheptyl (meth)acrylate, α-ethyl-6,7-epoxyheptyl (meth)acrylate, 3,4- compounds having an ethylenically unsaturated group and an epoxy group, such as epoxycyclohexylmethyl (meth)acrylate, o-vinylbenzyl glycidyl ether, m-vinylbenzyl glycidyl ether, and p-vinylbenzyl glycidyl ether; (2-ethyl-2-oxetanyl)methyl (meth)acrylate, (2-methyl-2-oxetanyl)methyl (meth)acrylate, 2-(2-ethyl-2-oxetanyl)ethyl (meth)acrylate, 2-(2-methyl-2-oxetanyl)ethyl (meth)acrylate, 3-(2-ethyl-2-oxetanyl)propyl (meth)acrylate, 3-(2 a compound having an ethylenically unsaturated group and an oxetanyl group, such as -methyl-2-oxetanyl)propyl (meth)acrylate; compounds having an ethylenically unsaturated group and an isocyanate group such as 2-(meth)acryloyloxyethyl isocyanate; 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 3-chloro-2-hydroxypropyl (meth) acrylate, 2- The compound which has ethylenically unsaturated groups, such as hydroxybutyl (meth)acrylate, and a hydroxyl group is mentioned, These can be combined suitably, and the target (meth)acrylic-type resin can be obtained.

The (meth)acrylic resin preferably has at least one functional group selected from a hydroxyl group, a glycidyl group and an amino group as a reaction point with a functional group-introducing compound or a crosslinking agent described later. As a monomer for synthesizing a (meth)acrylic resin having a hydroxyl group, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 3- The compound which has ethylenically unsaturated groups, such as chloro-2-hydroxypropyl (meth)acrylate and 2-hydroxybutyl (meth)acrylate and a hydroxyl group is mentioned, These are single 1 type, or 2 More than one species may be used in combination.

As a monomer for synthesizing a (meth)acrylic resin having a glycidyl group, glycidyl (meth)acrylate, α-ethylglycidyl (meth)acrylate, α-propylglycidyl (meth)acrylate, α-butyl glycidyl (meth) acrylate, 2-methyl glycidyl (meth) acrylate, 2-ethyl glycidyl (meth) acrylate, 2-propyl glycidyl (meth) acrylate, 3, 4-epoxybutyl (meth)acrylate, 3,4-epoxyheptyl (meth)acrylate, α-ethyl-6,7-epoxyheptyl (meth)acrylate, 3,4-epoxycyclohexylmethyl (meth)acryl and compounds having an ethylenically unsaturated group and an epoxy group, such as lactate, o-vinylbenzyl glycidyl ether, m-vinylbenzyl glycidyl ether, and p-vinylbenzyl glycidyl ether. It is independent or can use 2 or more types together.

It is preferable that the (meth)acrylic-type resin synthesize|combined from these monomers contains the functional group which can be chain-polymerized. The functional group capable of chain polymerization is at least one selected from, for example, an acryloyl group and a methacryloyl group. A functional group capable of chain polymerization can be introduced into the (meth)acrylic resin by, for example, reacting the following compound (functional group-introducing compound) with the (meth)acrylic resin synthesized as described above. Specific examples of the functional group-introducing compound include 2-methacryloyloxyethyl isocyanate, meta-isopropenyl-α,α-dimethylbenzyl isocyanate, methacryloyl isocyanate, allyl isocyanate cyanate, 1,1-(bisacryloyloxymethyl)ethylisocyanate; Acryloyl monoisocyanate compound obtained by reaction of a diisocyanate compound or a polyisocyanate compound, and hydroxyethyl (meth)acrylate or 4-hydroxybutylethyl (meth)acrylate; The acryloyl monoisocyanate compound etc. which are obtained by reaction of a diisocyanate compound or a polyisocyanate compound, a polyol compound, and hydroxyethyl (meth)acrylate are mentioned. Among these, 2-methacryloyloxyethyl isocyanate is especially preferable. These compounds may be used individually by 1 type, and may be used in combination of 2 or more type.

[Photoinitiator]

The photopolymerization initiator is not particularly limited as long as it generates active species capable of chain polymerization by irradiating active energy rays (at least one selected from ultraviolet rays, electron beams, and visible rays), and examples include photoradical polymerization initiators. have. Here, the active species capable of chain polymerization means that a polymerization reaction is initiated by reacting with a functional group capable of chain polymerization.

As a photo-radical polymerization initiator, Benzoin ketals, such as 2, 2- dimethoxy-1,2- diphenylethan-1-one; 1-Hydroxycyclohexylphenylketone, 2-hydroxy-2-methyl-1-phenylpropan-1-one, 1-[4-(2-hydroxyethoxy)phenyl]-2-hydroxy-2- α-hydroxyketones such as methyl-1-propan-1-one; 2-Benzyl-2-dimethylamino-1-(4-morpholinophenyl)-butan-1-one, 1,2-methyl-1-[4-(methylthio)phenyl]-2-morphopoly α-aminoketones such as nopropan-1-one; oxime esters such as 1-[4-(phenylthio)phenyl]-1,2-octadione-2-(benzoyl)oxime; Bis(2,4,6-trimethylbenzoyl)phenylphosphine oxide, bis(2,6-dimethoxybenzoyl)-2,4,4-trimethylpentylphosphine oxide, 2,4,6-trimethyl Phosphine oxides, such as a benzoyl diphenyl phosphine oxide; 2-(o-chlorophenyl)-4,5-diphenylimidazole dimer, 2-(o-chlorophenyl)-4,5-di(methoxyphenyl)imidazole dimer, 2-(o- Fluorophenyl)-4,5-diphenylimidazole dimer, 2-(o-methoxyphenyl)-4,5-diphenylimidazole dimer, 2-(p-methoxyphenyl)-4 2,4,5-triaryl imidazole dimers, such as a , 5- diphenyl imidazole dimer; Benzophenone, N,N'-tetramethyl-4,4'-diaminobenzophenone, N,N'-tetraethyl-4,4'-diaminobenzophenone, 4-methoxy-4'-dimethylamino benzophenone compounds such as benzophenone; 2-ethylanthraquinone, phenanthrenequinone, 2-tert-butylanthraquinone, octamethylanthraquinone, 1,2-benzanthraquinone, 2,3-benzanthraquinone, 2-phenylanthraquinone, 2,3-di Phenylanthraquinone, 1-chloroanthraquinone, 2-methylanthraquinone, 1,4-naphthoquinone, 9,10-phenanthraquinone, 2-methyl-1,4-naphthoquinone, 2,3-dimethyl quinone compounds such as anthraquinone; benzoin ethers such as benzoin methyl ether, benzoin ethyl ether, and benzoin phenyl ether; benzoin compounds such as benzoin, methylbenzoin, and ethylbenzoin; benzyl compounds such as benzyldimethyl ketal; Acridine compounds, such as 9-phenylacridine and 1,7-bis (9,9'- acridinyl heptane): N-phenylglycine and coumarin are mentioned.

Content of the photoinitiator in an adhesive composition is 0.1-30 mass parts with respect to content 100 mass parts of (meth)acrylic-type resin, It is preferable that it is 0.3-10 mass parts, It is 0.5-5 mass parts that more preferably. When content of a photoinitiator is less than 0.1 mass part, an adhesive layer will become insufficient hardening after active energy ray irradiation, and a pickup defect will occur easily. When content of a photoinitiator exceeds 30 mass parts, the contamination with respect to an adhesive bond layer (transfer with respect to the adhesive bond layer of a photoinitiator) will generate|occur|produce easily.

[crosslinking agent]

A crosslinking agent is used for the purpose of controlling the elastic modulus and/or adhesiveness of an adhesive layer, for example. The crosslinking agent may be a compound having two or more functional groups capable of reacting with at least one functional group selected from a hydroxyl group, a glycidyl group and an amino group of the (meth)acrylic resin in one molecule. Examples of the bond formed by the reaction of the crosslinking agent with the (meth)acrylic resin include an ester bond, an ether bond, an amide bond, an imide bond, a urethane bond, and a urea bond.

In this embodiment, as a crosslinking agent, it is preferable to employ|adopt the compound which has two or more isocyanate groups in 1 molecule. When such a compound is used, the (meth)acrylic resin can easily react with a hydroxyl group, a glycidyl group, an amino group, and the like to form a strong crosslinked structure.

Examples of the compound having two or more isocyanate groups in one molecule include 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, and 1,3-xylylene diisocyanate. , 1,4-xylylene diisocyanate, diphenylmethane-4,4'-diisocyanate, diphenylmethane-2,4'-diisocyanate, 3-methyldiphenyl Methane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane-4,4'-diisocyanate, dicyclohexylmethane-2,4 Isocyanate compounds, such as '- diisocyanate and lysine isocyanate, are mentioned.

As a crosslinking agent, you may employ|adopt the reaction product (isocyanate group containing oligomer) of the above-mentioned isocyanate compound and the polyhydric alcohol which has two or more OH groups in 1 molecule. Examples of the polyhydric alcohol having two or more OH groups in one molecule include ethylene glycol, propylene glycol, butylene glycol, 1,6-hexanediol, 1,8-octanediol, 1,9 -None indiol, 1,10-decanediol, 1,11-undecanediol, 1,12-dodecaindiol, glycerin, pentaerythritol, dipentaerythritol, 1,4-cyclohexyl Seindiol and 1,3-cyclohexanediol are mentioned.

Among these, as a crosslinking agent, a polyfunctional isocyanate having two or more isocyanate groups in one molecule and a polyhydric alcohol having three or more OH groups in one molecule (isocyanate group-containing oligomer) is a crosslinking agent. more preferably. By using such an isocyanate group-containing oligomer as a crosslinking agent, the pressure-sensitive adhesive layer 3 forms a dense crosslinked structure, thereby sufficiently suppressing the pressure-sensitive adhesive from adhering to the adhesive layer 5 in the pickup process. can

What is necessary is just to set content of the crosslinking agent in an adhesive composition suitably according to the cohesive force calculated|required with respect to an adhesive layer, elongation at break, adhesiveness with the adhesive bond layer 5, etc. Specifically, the content of the crosslinking agent is, for example, 3 to 30 parts by mass, preferably 4 to 15 parts by mass, more preferably 7 to 10 parts by mass with respect to 100 parts by mass of the content of the (meth)acrylic resin. do. By making content of a crosslinking agent into the said range, while it is possible to make compatible with the characteristic requested|required of the adhesive layer 3 in a dicing process, and the characteristic requested|required of the adhesive layer 3 in a die-bonding process in good balance, excellent pick-up property can be achieved

When content of a crosslinking agent is less than 3 mass parts with respect to content of 100 mass parts of (meth)acrylic-type resin, formation of a crosslinked structure becomes inadequate easily, and it originates in this, and it originates in this, WHEREIN: Interface with the adhesive bond layer 5 in a pick-up process Adhesion is not sufficiently reduced, and defects are likely to occur during pickup. On the other hand, when content of a crosslinking agent exceeds 30 mass parts with respect to content of 100 mass parts of (meth)acrylic-type resin, the adhesive layer 3 tends to become hard too much, and it originates in this, and a semiconductor chip peels in an expand process. easy to become

Content of the crosslinking agent with respect to the total mass of an adhesive composition is 0.1-20 mass %, for example, and 3-17 mass % or 5-15 mass % may be sufficient. When the content of the crosslinking agent is 0.1% by mass or more, it is easy to form a region (the first region 3a) in which the adhesive force is appropriately lowered by irradiation with active energy rays, and on the other hand, when it is 15% by mass or less, excellent pickup properties are achieved. easy.

The thickness of the pressure-sensitive adhesive layer 3 may be appropriately set according to the conditions (temperature and tension, etc.) of the expand step, for example, 1 to 200 μm, preferably 5 to 50 μm, more preferably 10 to 20 μm desirable. When the thickness of the pressure-sensitive adhesive layer 3 is less than 1 µm, the adhesiveness tends to be insufficient, and when it exceeds 200 µm, the cuff width is narrow at the time of expansion (the stress is relieved at the time of pushing up the pin), and the pickup tends to be insufficient.

The adhesive layer 3 is formed on the base material layer 1 . As a formation method of the adhesive layer 3, the known method is employable. For example, the laminate of the base material layer 1 and the adhesive layer 3 may be formed by the two-layer extrusion method, the varnish for formation of the adhesive layer 3 is prepared, and this is applied to the surface of the base material layer 1 Coating, or the adhesive layer 3 may be formed on the film by which the release process was carried out, and this may be transcribe|transferred to the base material layer 1.

The varnish for formation of the adhesive layer 3 is an organic solvent which can melt|dissolve (meth)acrylic-type resin, a photoinitiator, and a crosslinking agent, It is preferable to prepare using what volatilizes by heating. Specific examples of the organic solvent include aromatic hydrocarbons such as toluene, xylene, mesitylene, cumene, and p-cymene; cyclic ethers such as tetrahydrofuran and 1,4-dioxane; alcohols such as methanol, ethanol, isopropanol, butanol, ethylene glycol, and propylene glycol; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, and 4-hydroxy-4-methyl-2-pentanone; esters such as methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, and γ-butyrolactone; carbonate esters such as ethylene carbonate and propylene carbonate; Ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, propylene glycol mono Methyl ether, propylene glycol monoethyl ether, propylene glycol dimethyl ether, propylene glycol diethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether polyhydric alcohol alkyl ethers such as , diethylene glycol monobutyl ether, diethylene glycol dimethyl ether, and diethylene glycol diethyl ether; Ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether acetate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, polyhydric alcohol alkyl ether acetates such as diethylene glycol monomethyl ether acetate and diethylene glycol monoethyl ether acetate; and amides such as N,N-dimethylformamide, N,N-dimethylacetamide, and N-methylpyrrolidone.

Among these, from the viewpoint of solubility and boiling point, for example, toluene, methanol, ethanol, isopropanol, acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, methyl acetate, ethyl acetate, butyl acetate, ethylene glycol Cole monomethyl ether, ethylene glycol monoethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, diethylene glycol dimethyl ether, ethylene glycol monomethyl ether It is preferable that they are teracetate, propylene glycol monomethyl ether acetate, and N,N- dimethylacetamide. These organic solvents may be used individually by 1 type, and may use 2 or more types together. It is preferable that the solid content concentration of a varnish is 10-60 mass % normally.

(substrate layer)

As the base material layer 1, a known polymer sheet or film can be used, and there is no restriction|limiting in particular as long as an expand process can be implemented under low-temperature conditions. Specifically, as the base material layer 1, polyolefins such as crystalline polypropylene, amorphous polypropylene, high-density polyethylene, medium-density polyethylene, low-density polyethylene, ultra-low-density polyethylene, low-density linear polyethylene, polybutene, and polymethylpentene; Ethylene-vinyl acetate copolymer, ionomer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylic acid ester (random, alternating) copolymer, ethylene-butene copolymer, ethylene-hexene copolymer, Polyester such as polyurethane, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyetheretherketone, polyimide, polyetherimide, polyamide, wholly aromatic polyamide, polyphenylsulfide, Aramid (paper), glass, glass fiber, fluororesin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, silicone resin, or a mixture of these with a plasticizer, or crosslinking by electron beam irradiation cargo can be lifted.

The base layer (1) has a surface mainly comprising at least one resin selected from polyethylene, polypropylene, polyethylene-polypropylene random copolymer, and polyethylene-polypropylene block copolymer, this surface and the pressure-sensitive adhesive layer (3) ) is preferably in contact. These resins are good base materials also from a viewpoint of characteristics, such as a Young's modulus, stress relaxation property, and melting|fusing point, price point, waste material recycling after use, etc. Although a single layer may be sufficient as the base material layer 1, it may have a multilayer structure in which the layers which consist of different materials were laminated|stacked as needed. In order to control adhesiveness with the adhesive layer 3, you may perform surface roughening processes, such as a mat treatment and a corona treatment, with respect to the surface of the base material layer 1.

(Adhesive layer)

An adhesive composition constituting a known die-bonding film can be applied to the adhesive layer 5 . Specifically, the adhesive composition constituting the adhesive layer 5 preferably contains an epoxy group-containing acrylic copolymer, an epoxy resin, and an epoxy resin curing agent. According to the adhesive layer 5 containing these components, the adhesiveness between chips/substrates and chips/chips is excellent, and electrode embedding properties and wire embedding properties, etc. can be provided, and in the die bonding process, adhesion at low temperature. It is preferable because it has characteristics such as excellent curing in a short time and excellent reliability after molding with a sealing agent.

Examples of the epoxy resin include bisphenol A epoxy resin, bisphenol F epoxy resin, bisphenol S epoxy resin, alicyclic epoxy resin, aliphatic chain epoxy resin, phenol novolac epoxy resin, cresol novolak epoxy resin, Bisphenol A novolac type epoxy resin, diglycidyl ether of biphenol, diglycidyl ether of naphthalenediol, diglycidyl ether of phenol, diglycidyl ether of alcohol Bifunctional epoxy resins, such as a compound and these alkyl-substituted products, a halide, and a hydrogenated substance, and a novolak-type epoxy resin are mentioned. Moreover, you may apply other generally known epoxy resins, such as a polyfunctional epoxy resin and a heterocyclic-containing epoxy resin. These can be used individually or in combination of 2 or more types. Moreover, components other than an epoxy resin may be contained as an impurity in the range which does not impair a characteristic.

Examples of the epoxy resin curing agent include a phenol resin obtained by reacting a phenol compound with a xylylene compound serving as a divalent linking group in the absence of a catalyst or in the presence of an acid catalyst. Examples of the phenolic compound used in the production of the phenolic resin include phenol, o-cresol, m-cresol, p-cresol, o-ethylphenol, p-ethylphenol, o-n-propylphenol, m-n-propylphenol, p-n-propylphenol, o-isopropylphenol, m-isopropylphenol, p-isopropylphenol, o-n-butylphenol, m-n-butylphenol, p-n-butylphenol, o-isobutylphenol, m-isobutylphenol, p-isobutylphenol , octylphenol, nonylphenol, 2,4-xyleneol, 2,6-xyleneol, 3,5-xyleneol, 2,4,6-trimethylphenol, resorcin, catechol, hydroquinone, 4-methyl Toxyphenol, o-phenylphenol, m-phenylphenol, p-phenylphenol, p-cyclohexylphenol, o-allylphenol, p-allylphenol, o-benzylphenol, p-benzylphenol, o-chlorophenol, p -chlorophenol, o-bromophenol, p-bromophenol, o-iodophenol, p-iodophenol, o-fluorophenol, m-fluorophenol, p-fluorophenol, etc. are illustrated. These phenolic compounds may be used independently and may mix and use 2 or more types. As a xylylene compound which is a bivalent linking group used for manufacture of a phenol resin, xylylene dihalide, xylylene diglycol, and its derivative(s) shown below can be used. That is, α,α′-dichloro-p-xylene, α,α′-dichloro-m-xylene, α,α′-dichloro-o-xylene, α,α′-dibromo-p -xylene, α,α'-dibromo-m-xylene, α,α'-dibromo-o-xylene, α,α'-diiodo-p-xylene, α,α'-dia iodo-m-xylene, α,α'-diiodo-o-xylene, α,α'-dihydroxy-p-xylene, α,α'-dihydroxy-m-xylene, α,α′-dihydroxy-o-xylene, α,α′-dimethoxy-p-xylene, α,α′-dimethoxy-m-xylene, α,α′-dimethoxy -o-xylene, α,α'-diethoxy-p-xylene, α,α'-diethoxy-m-xylene, α,α'-diethoxy-o-xylene, α, α′-di-n-propoxy-p-xylene, α,α′-di-n-propoxy-m-xylene, α,α′-di-n-propoxy-o-xylene, α ,α′-di-isopropoxy-p-xylene, α,α′-diisopropoxy-m-xylene, α,α′-diisopropoxy-o-xylene, α,α′- di-n-butoxy-p-xylene, α,α′-di-n-butoxy-m-xylene, α,α′-di-n-butoxy-o-xylene, α,α′ -Diisobutoxy-p-xylene, α,α'-diisobutoxy-m-xylene, α,α'-diisobutoxy-o-xylene, α,α'-di-tert- butoxy-p-xylene, α,α′-di-tert-butoxy-m-xylene, and α,α′-di-tert-butoxy-o-xylene. These can be used individually or in combination of 2 or more types.

When making said phenol compound and a xylylene compound react, mineral acids, such as hydrochloric acid, sulfuric acid, phosphoric acid, and polyphosphoric acid; organic carboxylic acids such as dimethyl sulfuric acid, diethyl sulfuric acid, p-toluenesulfonic acid, methanesulfonic acid, and ethanesulfonic acid; super strong acids such as trifluoromethanesulfonic acid; strongly acidic ion exchange resins such as alkanesulfonic acid type ion exchange resins; super acid ion exchange resins such as perfluoroalkanesulfonic acid type ion exchange resins (trade names: Nafion, manufactured by Nafion, Du Pont, "Nafion" is a registered trademark); natural and synthetic zeolites; It is obtained by reacting using an acid catalyst such as activated clay (acid clay) until the xylylene compound, which is a raw material, substantially disappears at 50 to 250°C and the reaction composition becomes constant. The reaction time varies depending on the raw material and the reaction temperature, but is usually about 1 to 15 hours, and in fact, it may be determined while tracking the reaction composition by GPC (gel permeation chromatography) or the like.

It is preferable that the epoxy group-containing acrylic copolymer is a copolymer obtained by using glycidyl acrylate or glycidyl methacrylate as a raw material in an amount used as 0.5-6 mass % with respect to the copolymer obtained. When this quantity is 0.5 mass % or more, it is easy to obtain high adhesive force, and on the other hand, gelation can be suppressed because it is 6 mass % or less. The remainder can use mixtures of alkyl acrylates having an alkyl group having 1 to 8 carbon atoms, such as methyl acrylate and methyl methacrylate, alkyl methacrylates, and styrene and acrylonitrile. Among these, ethyl (meth)acrylate and/or butyl (meth)acrylate are especially preferable. The mixing ratio is preferably adjusted in consideration of Tg of the copolymer. When Tg is less than -10 degreeC, there exists a tendency for the tacking property of the adhesive bond layer 5 in a B-stage state to become large, and there exists a tendency for handling property to deteriorate. In addition, the upper limit of the glass transition point (Tg) of an epoxy group containing acrylic copolymer is 30 degreeC, for example. The polymerization method is not particularly limited, and examples thereof include pearl polymerization and solution polymerization. As a commercially available epoxy group-containing acrylic copolymer, HTR-860P-3 (trade name, manufactured by Nagase Chemtex Co., Ltd.) is mentioned, for example.

The weight average molecular weight of the epoxy group-containing acrylic copolymer is 100,000 or more, and in this range, adhesiveness and heat resistance are high, and it is preferable that it is 300,000-3 million, and it is more preferable that it is 500,000-2 million. It can suppress that the packing property between a semiconductor chip and the board|substrate which supports this falls that a weight average molecular weight is 3 million or less. A weight average molecular weight is a polystyrene conversion value using the analytical curve by standard polystyrene by the gel permeation chromatography method (GPC).

The adhesive bond layer 5 may further contain hardening accelerators, such as a tertiary amine, imidazole, and quaternary ammonium salts, as needed. Specific examples of the curing accelerator include 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-phenylimidazolium tri melitate. These may be used individually by 1 type, and may use 2 or more types together.

The adhesive bond layer 5 may further contain an inorganic filler as needed. Specific examples of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica, and amorphous silica. can These may be used individually by 1 type, and may use 2 or more types together.

The thickness of the adhesive bond layer 5 is 1-300 micrometers, for example, It is preferable that it is 5-150 micrometers, It is more preferable that it is 10-100 micrometers. When the thickness of the adhesive layer 5 is less than 1 µm, the adhesiveness tends to be insufficient, while on the other hand, when it exceeds 300 µm, the splitting properties and pick-up properties at the time of expansion tend to be insufficient.

Moreover, the aspect which does not contain a thermosetting resin may be sufficient as the adhesive bond layer 5. For example, when the adhesive layer 5 includes a reactive group-containing (meth)acrylic copolymer, the adhesive layer 5 includes a reactive group-containing (meth)acrylic copolymer, a curing accelerator, and a filler. it should be

<Manufacturing method of dicing die-bonding integrated film>

The manufacturing method of the film 10 is, on the surface of the base material layer 1, a pressure-sensitive adhesive layer comprising a pressure-sensitive adhesive composition in which adhesive strength is lowered by irradiation with active energy rays, and an adhesive layer 5 formed on the surface of the pressure-sensitive adhesive layer. The process of producing the laminated body to contain, and the process of irradiating an active energy ray to the area|region used as the 1st area|region 3a of the adhesive layer contained in a laminated body are included in this order. The irradiation amount of the active energy ray with respect to the area|region used as the 1st area|region 3a is 10-1000 mJ/cm< ² >, for example, 100-700 mJ/cm< ² > or 200-500 mJ/cm< ² > may be sufficient.

The said manufacturing method produces the laminated body of an adhesive layer and the adhesive bond layer 5 first, and irradiates an active energy ray to the specific area|region of an adhesive layer after that. As follows, an active energy ray may be irradiated with respect to the adhesive bond layer before bonding with the adhesive bond layer 5, and you may form the 1st area|region 3a. That is, the manufacturing method of the film 10 includes a step of forming a pressure-sensitive adhesive layer made of a composition in which adhesive strength is lowered by irradiating active energy rays on the surface of the base layer 1, and the first region 3a of the pressure-sensitive adhesive layer. ), the process of irradiating an active energy ray to the area|region and the process of laminating|stacking the adhesive bond layer 5 on the surface of the adhesive layer 3 after irradiating an active energy ray in this order may be included.

<Semiconductor device and its manufacturing method>

4 is a cross-sectional view schematically showing a semiconductor device according to the present embodiment. The semiconductor device 100 shown in this figure includes a substrate 70 , four chips S1 , S2 , S3 , and S4 stacked on the surface of the substrate 70 , and electrodes ( wires W1, W2, W3, and W4 electrically connecting the four chips S1, S2, S3, and S4 to each other, and a sealing layer 50 sealing them.

The substrate 70 is, for example, an organic substrate, and may be a metal substrate such as a lead frame. From a viewpoint of suppressing the curvature of the semiconductor device 100, the thickness of the board|substrate 70 is 70-140 micrometers, and 80-100 micrometers may be sufficient as it, for example.

The four chips S1, S2, S3, and S4 are laminated through the cured product 5C of the adhesive piece 5P. The shape of the chips S1, S2, S3, and S4 in a plan view is, for example, a square or a rectangle. The area of the chips S1, S2, S3, and S4 is 30 to 250 mm ² , and may be 40 to 200 mm ² or 50 to 150 mm ² . The length of one side of the chips S1, S2, S3, and S4 is, for example, 6.0 mm or less, and may be 7.0 to 18 mm or 8.0 to 15 mm. The thickness of the chips S1, S2, S3, and S4 is, for example, 10 to 150 µm, and may be 20 to 80 µm. Further, the length of one side of the four chips S1 , S2 , S3 , and S4 may be the same or different from each other, and the thickness is also the same. In addition, the four chips S1, S2, S3, and S4 may have a relatively small size. That is, the area of the chips S1 , S2 , S3 , and S4 may be less than 30 mm ² , for example, 0.1 to 20 mm ² or 1 to 15 mm ² .

The manufacturing method of the semiconductor device 100 includes the following steps.

(A) The process of preparing the film 10

(B) Stealth dicing or a process of half-cutting the wafer W with a blade

(C) Step of attaching the wafer W to the region Rw corresponding to the first region in the adhesive layer 5

(D) A step of obtaining a chip 8 with an adhesive piece in which the wafer W and the adhesive layer 5 are separated into pieces by expanding the base layer 1 under cooling conditions

(E) The process of reducing the adhesive force of the adhesive layer 3 with respect to the chip|tip 8 with an adhesive bond piece by irradiating an activation energy ray to the adhesive layer 3

(F) Step of picking up the chip 8 with the adhesive piece from the pressure-sensitive adhesive layer 3 in the state in which the base material layer 1 is expanded

(G) Step of mounting the chip 8 with the adhesive piece on the substrate or other chip

An example of the manufacturing method of the semiconductor device 100 is demonstrated concretely. First, a protective film (also referred to as a BG tape) is affixed to the circuit surface Wa of the wafer W . The wafer W is irradiated with a laser to form a plurality of cut lines L (stealth dicing). After that, backgrinding and polishing are performed on the wafer W as necessary. In addition, although the stealth dicing by a laser was illustrated here, you may cut the wafer W by a blade instead of this. The half-cut means not cutting the wafer W, but forming a notch corresponding to the line L of the wafer W to be cut.

Next, as shown to Fig.5 (a), the film 10 is affixed so that the adhesive bond layer 5 may contact with the back surface Wb of the wafer W. As shown in FIG. Moreover, the dicing ring DR is affixed with respect to the 2nd area|region 3b of the adhesive layer 3 . Then, the wafer W and the adhesive bond layer 5 are separated into pieces by cooling expansion under the temperature condition of 0-15 degreeC. That is, as shown in FIG.5(b), tension|tensile_strength is applied to the base material layer 1 by pushing up the inner area|region 1a of the dicing ring DR in the base material layer 1 with the ring Ra. give Thereby, the wafer W is divided along the line L to be cut, and accordingly, the adhesive layer 5 is divided into adhesive pieces 5P, and a plurality of adhesive pieces are attached on the surface of the pressure-sensitive adhesive layer 3 . A chip 8 is obtained. The chip|tip 8 with an adhesive bond piece is comprised by the chip|tip S and the adhesive bond piece 5P.

By heating the inner region 1a of the dicing ring DR in the base material layer 1, the inner region 1a is contracted. Fig. 6(a) is a cross-sectional view schematically showing a mode in which the inner region 1a is heated by the blow of the heater H. By contracting the inner region 1a in an annular fashion to impart tension to the substrate layer 1, the space between the adjacent chips 8 with adhesive pieces can be widened. Thereby, while being able to suppress generation|occurrence|production of a pick-up error further, the visibility of the chip|tip 8 with an adhesive bond piece in a pick-up process can be improved.

Next, as shown in FIG.6(b), the adhesive force of the adhesive layer 3 is reduced by irradiation of activation energy (for example, ultraviolet-ray (UV)). The irradiation amount of the active energy ray to the pressure-sensitive adhesive layer 3 may be, for example, 10-1000 mJ/cm ² , and may be 100-700 mJ/cm ² or 200-500 mJ/cm ² . Then, as shown in FIG.6(c), by pushing up the chip|tip 8 with an adhesive bond piece with the pushing jig 42, while peeling the chip|tip 8 with an adhesive bond piece from the adhesive layer 3, , The chip 8 with the adhesive piece is sucked up by the suction collet 44 and picked up.

The chip 8 with an adhesive piece is conveyed to a semiconductor device assembly apparatus (not shown), and is crimped|bonded on a circuit board etc. As shown in FIG. 7A , the first-stage chip S1 (chip S) is pressed to a predetermined position on the substrate 70 via the adhesive piece 5P. Next, the adhesive piece 5P is hardened by heating. Thereby, the adhesive bond piece 5P is hardened|cured and it becomes the hardened|cured material 5C. You may perform the hardening process of the adhesive bond piece 5P in a pressurized atmosphere from a viewpoint of reduction of a void.

The second stage chip S2 is mounted on the surface of the chip S1 in the same manner as the mounting of the chip S1 to the substrate 70 . Further, the structure 60 shown in FIG. 7B is manufactured by mounting the chips S3 and S4 in the third and fourth stages. After electrically connecting the chips S1, S2, S3, S4 and the substrate 70 with wires W1, W2, W3, and W4, the semiconductor element and the wire are sealed with a sealing layer 50, as shown in FIG. The semiconductor device 100 shown is completed.

Example

Hereinafter, the present disclosure will be described in more detail based on Examples, but the present invention is not limited to these Examples. In addition, unless there is a special description, all chemicals used reagents.

<Example 1>

[Synthesis of acrylic resin]

The acrylic resin mix|blended with an adhesive layer was synthesize|combined as follows. That is, the following components were put into the flask with a capacity of 2000 ml equipped with a three-one motor, a stirring blade, and a nitrogen introduction tube.

・Ethyl acetate (solvent): 635 g

·2-ethylhexyl acrylate: 395 g

· 2-hydroxyethyl acrylate: 100 g

·Methacrylic acid: 5g

·Azobisisobutyronitrile: 0.2g

After stirring the contents until sufficiently uniform, bubbling was performed at a flow rate of 500 ml/min for 60 minutes to degas the dissolved oxygen in the system. The temperature was raised to 78° C. for 1 hour, and polymerization was performed for 6 hours after the temperature was raised. Next, the reaction solution was transferred to a pressure cooker having a capacity of 2000 ml equipped with a three-one motor, a stirring blade, and a nitrogen inlet tube, heated at 120° C. and 0.28 MPa for 4.5 hours, and then cooled to room temperature (25° C., the same hereinafter).

Next, 490 g of ethyl acetate was added, stirred and diluted. After adding 0.025 g of methquinone as a polymerization inhibitor and 0.10 g of dioctyl tin dilaurate as a urethanization catalyst to this, 2-methacryloxyethyl isocyanate (Showa Denko Co., Ltd. make, Karenz) After adding 81 g of MOI (brand name)) and making it react at 70 degreeC for 6 hours, it cooled to room temperature. Then, ethyl acetate was added, it adjusted so that non-volatile matter content in an acrylic resin solution might be set to 35 mass %, and the (A) acrylic resin solution which has a functional group which can be chain-polymerized was obtained.

The solution containing the (A) acrylic resin obtained as mentioned above was vacuum-dried at 60 degreeC overnight. The solid content thus obtained was subjected to elemental analysis with a fully automatic elemental analyzer (manufactured by Elementa, trade name: varioEL), and the content of the introduced 2-methacryloxyethyl isocyanate was calculated from the nitrogen content. As a result, 0.89 mmol/ was g.

Moreover, the polystyrene conversion weight average molecular weight of (A) acrylic resin was calculated|required using the following apparatus. That is, SD-8022/DP-8020/RI-8020 manufactured by Tosoh Corporation was used, and Gelpack GL-A150-S/GL-A160-S manufactured by Hitachi Kasei Corporation was used for the column, and tetrahydrofuran was used as the eluent. GPC measurements were performed. As a result, the polystyrene conversion weight average molecular weight was 350,000.

[Production of dicing film]

By mixing the following components, the varnish for adhesive layer formation was prepared. The pressure-sensitive adhesive layer formed by this varnish is cured by irradiation with ultraviolet rays. The quantity of ethyl acetate (solvent) was adjusted so that the total solid content of a varnish might be 25 mass %.

· (A) acrylic resin solution: 100 parts by mass (solid content)

-(B) Photoinitiator (1-hydroxycyclohexylphenyl ketone, Ciba Specialty Chemicals Co., Ltd. make, Irgacure 184, "IRgacure" is a registered trademark): 2.0 mass parts

-(C) Crosslinking agent (polyfunctional isocyanate, Nippon Polyurethane Kogyo Co., Ltd. product, Colonate L, solid content 75%): 1.1 g mass part (solid content)

・Ethyl acetate (solvent)

The polyethylene terephthalate film (450 mm in width, 500 mm in length, 38 micrometers in thickness) to which the mold release process was given to one surface was prepared. After apply|coating the varnish for adhesive layer formation to the surface to which the peeling process was performed using the applicator, it dried at 80 degreeC for 5 minutes. Thereby, the laminated body (dicing film) which consists of a polyethylene terephthalate film and the adhesive layer (10 micrometers in thickness) formed thereon was obtained.

The polyolefin film (450 mm in width, 500 mm in length, 100 micrometers in thickness) to which corona treatment was given to one surface was prepared. The surface to which the corona treatment was given and the adhesive layer of the said laminated body were bonded together at room temperature. Next, the pressure-sensitive adhesive layer was transferred to the polyolefin film (cover film) by pressing with a rubber roll. Then, the dicing film provided with an adhesive layer was obtained by leaving it to stand at room temperature for 3 days.

[Production of die bonding film]

After adding cyclohexanone to the following components and stirring and mixing, it knead|mixed for 90 minutes using the bead mill.

・Epoxy resin (YDCN-703 (trade name), manufactured by Nittetsu Chemical & Materials Co., Ltd., cresol novolac type epoxy resin, epoxy equivalent 210, molecular weight 1200, softening point 80° C.): 55 parts by mass

-Phenolic resin (Milex XLC-LL (trade name), Mitsui Chemicals Co., Ltd. make, hydroxyl equivalent 175, water absorption rate 1.8%, heating weight decrease rate at 350 degreeC 4%): 45 mass parts

· Silane coupling agent 1 (NUCA-189 (trade name), manufactured by Nippon Unica Co., Ltd., γ-mercaptopropyl trimethoxysilane): 1.7 parts by mass

· Silane coupling agent 2 (NUCA-1160 (trade name), manufactured by Nippon Unica Co., Ltd., γ-ureidopropyltriethoxysilane) 3: .2 parts by mass

· Filler (Aerosil R972 (trade name), manufactured by Nippon Aerosil Co., Ltd., silica, average particle size 0.016 µm): 32 parts by mass

In addition, "Aerosil R972" is a silica particle having an organic group (for example, a methyl group) on the surface, dimethyldichlorosilane is coated on the surface of the silica particle, and hydrolyzed in a reactor at 400 ° C. .

The following components were added to the mixture of the said component, and it stirred and mixed. Then, the varnish for adhesive bond layer formation was obtained by vacuum deaeration.

・Acrylic rubber (HTR-860P-3 (trade name), manufactured by Nagase Chemtex Co., Ltd., content of glycidyl acrylate or glycidyl methacrylate: 3% by mass, weight average molecular weight 800,000): 280 parts by mass

・Cure accelerator (Curesol 2PZ-CN (trade name), “Curesol” is a registered trademark, manufactured by Shikoku Kasei Kogyo Co., Ltd., 1-cyanoethyl-2-phenylimidazole): 0.5 parts by mass

The polyethylene terephthalate film (thickness 35 micrometers) to which the mold release process was given to one surface was prepared. After apply|coating the varnish for adhesive bond layer formation to the peeling-processed surface, it heat-dried at 140 degreeC for 5 minutes. Thereby, the laminated body (die bonding film) which consists of a polyethylene terephthalate film (carrier film) and the adhesive bond layer (10 micrometers in thickness) of the B-stage state formed thereon was obtained.

[Production of dicing and die-bonding integrated film]

The die-bonding film obtained as described above was cut into a circle (diameter: 312 mm) for each carrier film. After affixing the dicing tape which peeled the cover film to this at room temperature, it was left to stand at room temperature for 1 day. Thereafter, the dicing tape was cut into a circle (diameter: 370 mm). In the adhesive layer of the thus-obtained dicing and die-bonding integrated film, the region corresponding to the wafer affixing position (the first region of the pressure-sensitive adhesive layer) was irradiated with ultraviolet rays under the following conditions using a high-pressure mercury lamp. .

The dominant wavelength of ultraviolet light: 365nm

・Ultraviolet illuminance: 13mW/cm ²

・Ultraviolet radiation dose: 20mJ/cm ²

The first area of the pressure-sensitive adhesive layer: a circle with a diameter of 302 mm

As described above, a dicing and die-bonding integrated film according to the present embodiment was obtained. In addition, a plurality of dicing and die-bonding integrated films for use in various evaluation tests described later were produced.

<Example 2>

A plurality of dicing and die-bonding integrated films were obtained in the same manner as in Example 1 except that the irradiation amount of ultraviolet rays was set to 30 mJ/cm ² instead of 20 mJ/cm ² .

<Example 3>

When preparing the varnish for pressure-sensitive adhesive layer formation, a plurality of dicing and die-bonding integrated films were obtained in the same manner as in Example 2 except that the amount of the crosslinking agent was 0.45 parts by mass instead of 1.1 parts by mass.

<Comparative Example 1>

When preparing the varnish for pressure-sensitive adhesive layer formation, a plurality of dicing and die-bonding integrated films were obtained in the same manner as in Example 2 except that the amount of the crosslinking agent was 4.1 parts by mass instead of 1.1 parts by mass.

<Comparative Example 2>

A plurality of dicing and die-bonding integrated films were obtained in the same manner as in Example 2 except that the irradiation amount of ultraviolet rays was set to 50 mJ/cm ² instead of 30 mJ/cm ² .

<Comparative Example 3>

Except not having performed ultraviolet irradiation, it carried out similarly to Example 1, and obtained several dicing die-bonding integrated film.

<Comparative Example 4>

A plurality of dicing and die-bonding integrated films were obtained in the same manner as in Example 3 except that ultraviolet irradiation was not performed.

[Evaluation Test]

(1) Measurement of the adhesive force (30° peeling strength) of the pressure-sensitive adhesive layer (after the first UV irradiation)

The adhesive force of the adhesive layer with respect to the adhesive bond layer of the dicing die-bonding integrated film which concerns on an Example and a comparative example was evaluated by measuring the 30 degree peeling strength. That is, a sample having a width of 25 mm and a length of 100 mm was cut out from the dicing and die-bonding integrated film. The peel strength of the adhesive layer with respect to the adhesive bond layer was measured using the tensile tester. Measurement conditions were made into 30 degrees of peeling angle, and 60 mm/min of tensile speed|rate. In addition, the storage of a sample and the measurement of peeling strength were performed in the environment of the temperature of 23 degreeC, and 40% of relative humidity. The dicing and die-bonding integrated films according to Examples 1 to 3 and Comparative Examples 1 and 2 were subjected to one UV irradiation. Tables 1 and 2 show the results. In Comparative Examples 3 and 4, no ultraviolet rays were irradiated in the process of the dicing and die-bonding integrated film, but in Table 2, for convenience, the results are described in the "first ultraviolet irradiation" column.

(2) Measurement of the adhesive force (30° peeling strength) of the pressure-sensitive adhesive layer (after the second UV irradiation)

The dicing and die-bonding integrated films according to Examples 1 to 3 and Comparative Examples 1 and 2 were irradiated with a second ultraviolet ray under the following conditions corresponding to the second ultraviolet ray irradiation performed before the pickup of the chip with an adhesive piece. did. Then, the 30 degree peeling strength was measured for the adhesive force of the adhesive layer with respect to an adhesive bond layer on the conditions similar to the above. Tables 1 and 2 show the results. In Comparative Examples 3 and 4, since no ultraviolet light was irradiated in the process of the dicing and die-bonding integrated film, it was the first ultraviolet irradiation. the results were recorded.

<Second UV irradiation conditions>

The dominant wavelength of ultraviolet light: 365nm

・Ultraviolet illuminance: 100mW/cm ²

・Ultraviolet radiation dose: 150mJ/cm ²

(2) Processability evaluation

(i) Preparation of samples for processability evaluation

A protective tape (BG tape) was affixed on the surface of a silicon wafer (diameter: 12 inches, thickness: 775 µm). After that, stealth dicing of the silicon wafer was performed. That is, the modified layer was formed in the silicon wafer by irradiating a laser beam with respect to the surface (back surface) of the silicon wafer on the opposite side to the side to which the BG tape was affixed under the following conditions.

<Stealth Dicing Conditions>

・Stealth dicing device: DFL7361 (manufactured by Disco Co., Ltd.)

・Laser oscillator type: semiconductor laser excitation Q-switched solid-state laser

Wavelength: 1342nm

・Frequency: 90kHz

・Output: 1.7W

・Number of passes: 2

・Chip size: 10mm×10mm

・Dicing speed: 700mm/sec

The silicon wafer after stealth dicing was grind|polished until it became 30 micrometers in thickness. A grinder polisher device (DGP8761, manufactured by Disco Corporation) was used for polishing. A dicing die-bonding integrated film was affixed to the polished silicon wafer and the dicing ring under the following conditions. Then, the BG tape was peeled from the surface of a silicon wafer.

<Attachment Conditions>

・Attaching device: DFM2800 (manufactured by Disco Co., Ltd.)

・Attaching temperature: 70℃

・Attaching speed: 10mm/s

・Attachment tension level: Level 6

Then, it cooled and expanded under the following conditions using the die separator (DDS2300, Disco Corporation make). Then, the base material layer (polyethylene terephthalate film) of the dicing die-bonding integrated film was heat-shrinked under the following conditions. Through these steps, the silicon wafer and the adhesive layer were divided into a plurality of chips with adhesive pieces (size 10 mm x 10 mm).

<Cooling expand condition>

Cooling temperature: -15℃

Cooling time: 120 seconds

・Push-up amount: 12mm

·Push-up speed: 200mm/sec

・Retention time after push-up: 3 seconds

<Heat shrink condition>

·Heater temperature: 220℃

·Heater rotation speed: 5°/sec

・Push-up amount: 8mm

·Tape cooling waiting time: 10 seconds

After separating the silicon wafer and the adhesive layer into pieces, the pressure-sensitive adhesive layer was irradiated with ultraviolet rays under the following conditions. As a result, the pressure-sensitive adhesive layer was cured to lower the adhesive force to the adhesive layer.

<Ultraviolet irradiation conditions>

・Ultraviolet illuminance: 100mW/cm ²

・Ultraviolet radiation dose: 150mJ/cm ²

(ii) Evaluation of each processability

(DAF blows)

After cooling expand and heat shrink, the following criteria evaluated DAF flying.

A: There was no DAF blowing at all.

B: DAF did not fly, but peeling or floating was confirmed at the interface of an adhesive bond layer and an adhesive layer.

C: DAF flying occurred in at least one place.

(Chip Edge Peeling)

After cooling expand and heat shrink, the following criteria evaluated the peeling of the adhesive bond layer and the adhesive layer in the edge part of the chip|tip with an adhesive bond piece.

A: In the edge part, peeling was not seen at all.

B: Peeling was seen in the length of 1 mm or more and less than 2 mm from the edge part.

C: Peeling of 2 mm or more and less than 3 mm was seen from the edge part.

D: Peeling of 3 mm or more was observed from the edge part.

(Separation property of adhesive layer)

The whole surface of the silicon wafer after cooling expand and heat shrink was observed under a microscope, and the following criteria evaluated the parting property of an adhesive bond layer.

A: The adhesive layer was completely separated.

D: There was a part which was not divided in at least 1 place of the adhesive bond layer.

(Cuff width)

The space|interval (kerf width) of the chip|tip with an adhesive bond layer after segmentation was measured using the microscope. The kerf widths in the MD/TD direction were respectively measured (18 points in total) at two locations on the outer periphery of the silicon wafer (top, bottom, left, right) and at one location at the center, and the average value was obtained. The following criteria evaluated.

S: The average value of the cuff width was 100 µm or more and less than 150 µm.

A: The average value of the cuff width was 70 µm or more and less than 100 µm.

B: The average value of the cuff width was 50 µm or more and less than 70 µm.

(pick-up)

After performing said evaluation, 100 chips|tips with an adhesive bond piece were picked up on condition of the following.

<Pick-up conditions>

・Die bonder device: DB-830P (manufactured by Passford Technology Co., Ltd.)

Push-up pin: EJECTOR NEEDLE SEN2-83-05 (diameter: 0.7 mm, tip shape: hemisphere with a radius of 350 μm, manufactured by Micro Mechanics)

·Push-up height: 250μm

・Push-up speed: 1mm/sec

・Number of push-up pins: 9

<Evaluation criteria>

A: The success rate of pickup was 100%.

B: The success rate of pickup was 80% or more and less than 100%.

C: The success rate of pickup was 60% or more and less than 80%.

[Table 1]

[Table 2]

As for the films concerning Examples 1-3, all the results of processability evaluation were favorable. In particular, in Examples 1 and 2, the evaluation of the cuff width was "S". Example 3 had an evaluation of the cuff width of "A" and was the same as that of Comparative Example 3, but had better MD/TD balance than Comparative Example 3. A kerf width is one of the important items in the process of stealth dicing from a viewpoint of achieving excellent pick-up property.

Advantageous Effects of Invention According to the present disclosure, a dicing and die-bonding integrated film and a method for manufacturing the same are provided, which are convenient for users to use and useful for efficiently manufacturing a semiconductor device. Further, according to the present disclosure, a method for manufacturing a semiconductor device using the dicing and die-bonding integrated film is provided.

One… base layer
3… adhesive layer
3a… first area
3b… second area
5… adhesive layer
8… Chip with adhesive piece
10… Dicing and die-bonding integrated film
W… wafer

Claims (9)

(A) dicing die bonding in which the base layer, the pressure-sensitive adhesive layer and the adhesive layer are laminated in this order, and the pressure-sensitive adhesive layer has a first region in which the adhesive force to the adhesive layer is previously lowered by irradiation with active energy rays The process of preparing an integral film, and
(B) stealth dicing or half-cutting the wafer with a blade;
(C) attaching the wafer to a region corresponding to the first region in the adhesive layer;
(D) expanding the base material layer under cooling conditions to obtain a chip with an adhesive piece in which the wafer and the adhesive layer are separated into pieces;
(E) a step of reducing the adhesive force of the pressure-sensitive adhesive layer to the chip with an adhesive piece by irradiating the pressure-sensitive adhesive layer with an activation energy ray;
(F) picking up the chip with the adhesive piece from the pressure-sensitive adhesive layer in the expanded state of the base material layer;
(G) mounting the chip with the adhesive piece on a substrate or other chip;
The dicing and die-bonding integrated film in the step (A) has an adhesive force of the first region to the adhesive layer, measured under conditions of a peeling angle of 30° and a peeling rate of 60 mm/min at a temperature of 23° C. 6.0N/25mm or more and 12.5N/25mm or less, The manufacturing method of the semiconductor device. The method according to claim 1,
(D) The method for manufacturing a semiconductor device, wherein the chip with an adhesive piece obtained in the step has a square or rectangular shape in plan view and has a side of 6.0 mm or more. The method according to claim 1 or 2,
The pressure-sensitive adhesive layer has a second area in which the adhesive force to the adhesive layer is greater than that of the first area,
A method of manufacturing a semiconductor device in which a dicing ring is affixed to the second region simultaneously with the step (C) or before the step (D). a base layer,
an adhesive layer,
A pressure-sensitive adhesive layer disposed between the base layer and the adhesive layer and having a first region in which the adhesive force to the adhesive layer is lowered in advance by irradiation with active energy rays,
The adhesive force of the first region to the adhesive layer is 6.0N/25mm or more and 12.5N/25mm or less, dicing die-bonding integrated type, measured under the conditions of a peeling angle of 30° and a peeling rate of 60mm/min at a temperature of 23°C film. 5. The method according to claim 4,
After irradiating an ultraviolet ray of 150 mJ/cm ² to the first region, the first region for the adhesive layer, measured under the conditions of a peel angle of 30° and a peel rate of 60 mm/min at a temperature of 23° C. A dicing and die-bonding integrated film with an adhesive strength of 1.2N/25mm or less. 6. The method according to claim 4 or 5,
A dicing and die-bonding integrated film applied to a semiconductor device manufacturing process including a step of segmenting a wafer into a plurality of chips having an area of 30 to 250 mm ² . 7. The method according to any one of claims 4 to 6,
The pressure-sensitive adhesive layer, the dicing die-bonding integrated film having a second area having a greater adhesive force to the adhesive layer than the first area. As a manufacturing method of the dicing die-bonding integrated film in any one of Claims 4-7,
A step of producing a laminate comprising a pressure-sensitive adhesive layer composed of a composition in which adhesive strength is lowered by irradiation with active energy rays on the surface of the base layer, and the adhesive layer formed on the surface of the pressure-sensitive adhesive layer;
A method for manufacturing an integrated dicing and die-bonding film comprising the step of irradiating an active energy ray to a region serving as the first region of the pressure-sensitive adhesive layer included in the laminate in this order. As a manufacturing method of the dicing die-bonding integrated film in any one of Claims 4-7,
A step of forming a pressure-sensitive adhesive layer comprising a composition in which adhesive strength is lowered by irradiation with active energy rays on the surface of the base layer;
a step of irradiating an active energy ray to a region serving as the first region of the pressure-sensitive adhesive layer;
A method for producing a dicing and die-bonding integrated film comprising the step of laminating the adhesive layer on the surface of the pressure-sensitive adhesive layer after irradiation with the active energy ray in this order.

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