WO2023157195A1 - Dicing die-bonding film, and method for manufacturing semiconductor device - Google Patents

Dicing die-bonding film, and method for manufacturing semiconductor device Download PDF

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Publication number
WO2023157195A1
WO2023157195A1 PCT/JP2022/006459 JP2022006459W WO2023157195A1 WO 2023157195 A1 WO2023157195 A1 WO 2023157195A1 JP 2022006459 W JP2022006459 W JP 2022006459W WO 2023157195 A1 WO2023157195 A1 WO 2023157195A1
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Prior art keywords
die bonding
bonding film
film
dicing
adhesive layer
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PCT/JP2022/006459
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French (fr)
Japanese (ja)
Inventor
強 田澤
尚弘 木村
和弘 山本
有輝啓 岩永
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株式会社レゾナック
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Priority to PCT/JP2022/006459 priority Critical patent/WO2023157195A1/en
Priority to PCT/JP2023/005056 priority patent/WO2023157847A1/en
Priority to JP2023538017A priority patent/JPWO2023157847A1/ja
Priority to CN202380020759.3A priority patent/CN118661243A/en
Priority to TW112105490A priority patent/TW202340410A/en
Publication of WO2023157195A1 publication Critical patent/WO2023157195A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Definitions

  • the present disclosure relates to a dicing die bonding film and a method of manufacturing a semiconductor device using the same.
  • a dicing film used for fixing the semiconductor wafer during the process of dividing the semiconductor wafer by dicing and a die bonding film for bonding between chips or between a chip and a substrate are integrated.
  • Dicing die bonding films semiconductor processing tapes
  • a die bonding film constituting a dicing die bonding film generally has a thickness of about several tens of ⁇ m in many cases.
  • One aspect of the present disclosure relates to a dicing die bonding film having a die bonding film having a thickness of 10 ⁇ m or less. About improving.
  • One aspect of the present disclosure relates to a dicing die bonding film including a die bonding film and a dicing film having an adhesive layer attached to the die bonding film.
  • the die bonding film has a thickness of 10 ⁇ m or less, and the adhesive layer has a thickness of less than 10 ⁇ m.
  • Another aspect of the present disclosure is to separate the semiconductor wafer and the die bonding film by a method including: attaching the die bonding film of the dicing die bonding film to a semiconductor wafer; and stretching the dicing die bonding film.
  • the present invention relates to a method of manufacturing a semiconductor device, comprising: dividing to thereby form a chip with a die bonding film having the die bonding film separated into chips and pieces on the adhesive layer.
  • a method including stretching the dicing die bonding film can improve the dividability of the die bonding film in the step of dividing the semiconductor wafer.
  • FIG. 1A and 1B are a plan view and a cross-sectional view showing an example of a dicing die bonding film;
  • FIG. It is process drawing which shows an example of the method of manufacturing a semiconductor device. It is process drawing which shows an example of the method of manufacturing a semiconductor device.
  • each component including steps, etc.
  • the sizes of the components in each figure are conceptual, and the relative sizes of the components are not limited to those shown in each figure.
  • the numerical values and their ranges in this disclosure are not intended to limit the invention.
  • the numerical range indicated using "to” indicates the range including the numerical values before and after "to” as the minimum and maximum values, respectively.
  • the upper limit or lower limit described in one numerical range may be replaced with the upper limit or lower limit of the numerical range described in other steps. good.
  • the upper or lower limits of the numerical ranges may be replaced with the values shown in the examples.
  • (meth)acrylate means acrylate or its corresponding methacrylate.
  • (meth)acryloyl group and (meth)acrylic copolymer.
  • Each component and material exemplified in this specification may be used singly or in combination of two or more unless otherwise specified.
  • FIG. 1 (a) of FIG. 1 is a plan view showing an example of a dicing die bonding film, and (b) of FIG. 1 is a cross-sectional view taken along line BB of (a) of FIG.
  • the dicing film 5 has a base film 3 and an adhesive layer 2 is provided on the base film 3 .
  • FIG. 1 also shows the semiconductor wafer Wa to which the die bonding film 1 is attached.
  • the die bonding film 1 is an adhesive film for bonding a chip to another chip or substrate, and is sometimes called a die attach film (DAF).
  • a die bonding film 1 illustrated in FIG. 1 has a circular main surface covering the entire main surface of a semiconductor wafer Wa.
  • the die bonding film 1 can have a thickness of 10 ⁇ m or less.
  • the die bonding film 1 having a thickness of 10 ⁇ m or less is advantageous for manufacturing a thin semiconductor package having a multilayer chip, for example.
  • the thickness of the die bonding film 1 may be 9 ⁇ m or less, 8 ⁇ m or less, or 7 ⁇ m or less, or may be 1 ⁇ m or more, 2 ⁇ m or more, 3 ⁇ m or more, 4 ⁇ m or more, or 5 ⁇ m or more.
  • the die bonding film 1 can be a film formed from an adhesive normally used for chip bonding.
  • the die bonding film 1 may be a thermosetting adhesive.
  • the thermosetting adhesive constituting the die bonding film 1 contains, for example, a high molecular weight resin component and a thermosetting component.
  • the high molecular weight resin component that can be contained in the die bonding film 1 may contain, for example, at least one resin selected from the group consisting of acrylic rubber, polyimide, and phenoxy resin.
  • the high molecular weight resin component may have reactive groups such as epoxy groups.
  • the weight-average molecular weight of the high-molecular-weight resin component (converted to standard polystyrene by GPC method) may be 100,000 to 3,000,000.
  • the content of the high molecular weight resin component may be 30 to 80 parts by mass with respect to 100 parts by mass of the die bonding film 1 as a whole.
  • thermosetting component that can be contained in the die bonding film 1 is a compound having a reactive group that forms a crosslinked structure through self-polymerization and/or reaction with a curing agent.
  • the thermosetting component may include, for example, at least one selected from the group consisting of epoxy resins, bismaleimide resins, triazine resins, and phenolic resins.
  • the content of the thermosetting component may be 1 to 30 parts by mass with respect to 100 parts by mass of the die bonding film 1 .
  • thermosetting adhesive that constitutes the die bonding film 1 may contain other components if necessary.
  • other components include a curing agent that reacts with the thermosetting component, a curing accelerator that accelerates the reaction between the thermosetting component and the curing agent, a coupling agent (e.g., silane coupling agent), and a filler (e.g., silica).
  • the dicing film 5 has a base film 3 having a rectangular main surface and an adhesive layer 2 provided on the base film 3 .
  • the pressure-sensitive adhesive layer 2 has a main surface 2 a in contact with the base film 3 and a main surface 2 b in contact with the die bonding film 1 .
  • the main surfaces 2 a and 2 b of the adhesive layer 2 can be circular surfaces sized to cover the entire main surface of the die bonding film 1 .
  • the adhesive layer 2 may have a thickness of less than 10 ⁇ m.
  • the die bonding film 1 having a thickness of 10 ⁇ m or less is particularly easily divided in the step of dividing the semiconductor wafer Wa by a method including stretching the dicing die bonding film 10. be done. Further, when the thickness of the die bonding film 1 is 10 ⁇ m or less, even if the thickness of the adhesive layer 2 is less than 10 ⁇ m, scattering of chips formed by dividing the semiconductor wafer Wa is sufficiently suppressed.
  • the thickness of the adhesive layer 2 may be 9 ⁇ m or less, 8 ⁇ m or less, 7 ⁇ m or less, 6 ⁇ m or less, 5 ⁇ m or less, 4 ⁇ m or less, or 3 ⁇ m or less.
  • the thickness of the adhesive layer 2 may be 0.5 ⁇ m or more, 1 ⁇ m or more, or 2 ⁇ m or more.
  • the adhesive layer 2 can be a layer formed of an adhesive commonly used in dicing films.
  • the adhesive constituting the adhesive layer 2 may be a pressure sensitive adhesive or an ultraviolet curable adhesive.
  • An ultraviolet curable adhesive is an adhesive that has the property that its adhesiveness is reduced by ultraviolet irradiation. If an ultraviolet curable adhesive is used, the adhesive strength of the adhesive layer 2 can be reduced by irradiating ultraviolet rays before picking up the chip to which the die bonding film is attached, for example.
  • the UV-curable pressure-sensitive adhesive may contain, for example, an acrylic resin having a (meth)acryloyl group. The acrylic resin may have a hydroxyl group. Acrylic resins are polymers containing (meth)acryloyl acid esters as monomer units.
  • the UV-curable pressure-sensitive adhesive may further contain other components such as a photopolymerization initiator and a cross-linking agent (for example, a polyisocyanate compound).
  • a cross-linking agent is a compound having a reactive group that reacts with an acrylic resin, and examples thereof include polyisocyanate compounds.
  • the high peel strength of the adhesive layer 2 with respect to the die bonding film 1 suppresses scattering of the chips and prevents peeling of the die bonding film 1 from the adhesive layer 2 in the process of forming chips by dividing the semiconductor wafer Wa. Contributes to suppression.
  • the 30° peel strength of the adhesive layer 2 to the die bonding film 1 may be 6.0 N/25 mm or more.
  • the 30° peel strength is the peel strength obtained from the stress when the adhesive layer 2 is peeled off in the direction of 30° with respect to the main surface of the die bonding film 1 . The details of the method for measuring the 30° peel strength will be described in Examples below.
  • the 30° peel strength of the adhesive layer 2 before ultraviolet irradiation may be 6.0 N/25 mm or more.
  • the 30° peel strength (30° peel strength before UV irradiation) of the adhesive layer 2 to the die bonding film 1 may be 20 N/25 mm or less, 17.5 N/25 mm or less, or 15 N/25 mm or less.
  • the base film 3 constituting the dicing film 5 can be selected from base films constituting dicing die bonding films that are commonly used in a process of dividing a semiconductor wafer by a method including stretching a dicing die bonding film. can.
  • the base film 3 may be a resin film such as polyester (polyethylene terephthalate (PET), polybutylene terephthalate, polyethylene naphthalate, etc.), polyolefin (polyethylene film, polypropylene, etc.), polycarbonate, polyamide, polyimide, polyamideimide. , polyetherimide, polyether sulfide, polyether sulfone, polyether ketone, polyphenylene ether, and polyphenylene sulfide.
  • PET polyethylene terephthalate
  • polybutylene terephthalate polyethylene naphthalate, etc.
  • polyolefin polyethylene film, polypropylene, etc.
  • polycarbonate polyamide, polyimide, poly
  • the base film 3 may be a single layer film or a multilayer film composed of two or more types of films.
  • the thickness of the base film 3 may be, for example, 10 ⁇ m or more, 15 ⁇ m or more, or 20 ⁇ m or more, and may be 200 ⁇ m or less, 175 ⁇ m or less, or 150 ⁇ m or less.
  • the base film 3 illustrated in FIG. 1 has a rectangular main surface, the shape of the base film 3 is not limited to this.
  • the base film 3 may be a long film.
  • a plurality of adhesive layers 2 may be arranged on one long base film 3 .
  • FIGS. 2 and 3 are process diagrams showing an example of a method of manufacturing a semiconductor device using the dicing die bonding film exemplified above.
  • the method shown in FIGS. 2 and 3 includes bonding the die bonding film 1 of the dicing die bonding film 10 to the semiconductor wafer Wa, and stretching the dicing die bonding film 10 to obtain the semiconductor wafer Wa and the die.
  • the semiconductor wafer Wa has two main surfaces F1 and F2.
  • the main surface F1 may be the circuit surface
  • the main surface F2 may be the back surface opposite to the circuit surface.
  • the semiconductor wafer Wa may be a silicon wafer.
  • the semiconductor wafer Wa may be irradiated with a laser beam to form a modified layer along the planned cutting line before the die bonding film 1 is attached. After that, the semiconductor wafer Wa may be subjected to back grinding and polishing.
  • the die bonding film 1 is attached to the semiconductor wafer Wa in such a direction that the die bonding film 1 is in contact with the main surface F2 of the semiconductor wafer Wa. Further, a dicing ring DR is attached to the main surface 2b of the adhesive layer 2 on the die bonding film 1 side so as to surround the semiconductor wafer Wa.
  • the dicing film 5 is stretched by pushing up the region of the dicing film 5 inside the dicing ring DR with the ring Ra under low temperature conditions.
  • the temperature at this time may be, for example, -15 to 0°C.
  • the extension of the dicing film 5 divides the semiconductor wafer Wa and the die bonding film 1 along the modified layer in the semiconductor wafer Wa.
  • the semiconductor wafer Wa is divided into a plurality of chips C, and the die bonding film 1 is divided into individualized portions 1a attached to the individual chips C.
  • a chip 30 with a die bonding film is formed on the adhesive layer 2, having the chip C and the individualized die bonding film 1a.
  • the heater H heats the area of the dicing film 5 between the dicing ring DR and the chip 30 with the die bonding film, as shown in FIG. 3(a). Due to the shrinkage of the dicing film 5 at the heated portion, the distance between the chips 30 with the die bonding film can be further widened.
  • the picked-up chip 30 with a die bonding film may be crimped to a circuit board or another chip.
  • Example 1 Synthesis of Acrylic Resin The following ingredients were placed in a 2000 ml flask equipped with a three-one motor, a stirring blade and a nitrogen inlet tube to form a reaction solution.
  • reaction solution After stirring the reaction solution until it became sufficiently uniform, dissolved oxygen in the system was removed by bubbling nitrogen gas at a flow rate of 500 mL/min for 60 minutes. The temperature of the reaction solution was raised to 78° C. over 1 hour, and the polymerization reaction was allowed to proceed at the same temperature for 6 hours. Then, the reaction solution was transferred to a 2000 mL capacity autoclave equipped with a three-one motor, a stirring blade and a nitrogen inlet tube. In a pressure kiln, the reaction solution was heated to 120° C. for 4.5 hours under an atmosphere of 0.28 MPa. After that, the reaction solution containing the produced polymer was cooled to room temperature (25° C., the same applies hereinafter).
  • the obtained acrylic resin solution was vacuum-dried overnight at 60°C, and the remaining solid content was subjected to elemental analysis using a fully automatic elemental analyzer (manufactured by Elemental, trade name: varioEL).
  • the amount of 2-methacryloyloxyethyl groups introduced per 1 g of the acrylic resin was calculated from the nitrogen content obtained from the elemental analysis and found to be 0.89 mmol/g.
  • the weight average molecular weight (standard polystyrene conversion value) of the acrylic resin was determined by GPC measurement of the acrylic resin. SD-8022/DP-8020/RI-8020 manufactured by Tosoh Corporation was used for GPC measurement. Gelpack GL-A150-S/GL-A160-S of Showa Denko Materials Co., Ltd. was used as a column. Tetrahydrofuran was used as the eluent.
  • the acrylic resin had a weight average molecular weight of 350,000.
  • a varnish (concentration of components other than solvent: 25% by mass) for forming an ultraviolet curable pressure-sensitive adhesive layer was prepared by mixing the following components.
  • the acrylic resin was synthesized in "1. Synthesis of acrylic resin”. "Solids” means the amount of ingredients other than solvent.
  • Acrylic resin 100 parts by mass (solid content)
  • Photopolymerization initiator (1-hydroxycyclohexylphenyl ketone, manufactured by Ciba Specialty Chemicals Co., Ltd., Irgacure 184, “Irgacure” is a registered trademark): 2.0 parts by mass
  • ⁇ Crosslinking agent polyfunctional isocyanate, manufactured by Nippon Polyurethane Industry Co., Ltd. , Coronate L, solid content 75%): 4.1 parts by mass (solid content) ⁇ Ethyl acetate (solvent)
  • a polyethylene terephthalate film (width 450 mm, length 500 mm, thickness 38 ⁇ m) having a release surface was prepared as a cover film.
  • a varnish was applied to the release surface of the cover film using an applicator, and the coating film was dried at 80°C for 5 minutes.
  • a laminate film composed of a cover film and an adhesive layer (thickness of 2 ⁇ m) formed thereon was obtained.
  • a polyolefin film (width 450 mm, length 500 mm, thickness 100 ⁇ m) having a corona-treated surface was prepared as a base film.
  • the longitudinal direction of the base film is referred to as the MD direction
  • the direction perpendicular to the MD direction is referred to as the TD direction.
  • This base film was attached to the pressure-sensitive adhesive layer of the laminate film at room temperature so that the corona-treated surface was in contact with the pressure-sensitive adhesive layer. Subsequently, the base film was adhered to the pressure-sensitive adhesive layer by pressing the whole with a rubber roll.
  • a dicing film having a base film, an adhesive layer and a cover film was left at room temperature for 3 days.
  • a polyethylene terephthalate film (35 ⁇ m thick) having a release surface was prepared as a carrier film.
  • a varnish for forming a die bonding film was applied to the release surface of the carrier film, and the coating film was dried by heating at 140° C. for 5 minutes.
  • a laminate film composed of the carrier film and the B-stage die bonding film (thickness 7 ⁇ m) formed thereon was obtained.
  • Examples 2, 3 and Comparative Examples 1-3 A plurality of dicing die bonding films were produced in the same manner as in Example 1, except that the thickness of the adhesive layer was changed as shown in Table 1.
  • Reference examples 1-3 A plurality of dicing die bonding films were produced in the same manner as in Example 1 except that the thickness of the die bonding film was changed to 20 ⁇ m and the thickness of the adhesive layer was changed as shown in Table 1.
  • Stealth dicing conditions ⁇ Stealth dicing device: DFL7361 (manufactured by Disco Co., Ltd.) ⁇ Laser oscillator type: Semiconductor laser excitation Q-switched solid state laser ⁇ Wavelength: 1342 nm ⁇ Frequency: 60 kHz ⁇ Output: 0.8W ⁇ Number of passes: 2 ⁇ Chip size: 3mm x 12mm ⁇ Dicing speed: 800mm/sec
  • the surface of the silicon wafer opposite to the protective tape was polished using a grinder polisher (DGP8761, manufactured by Disco Corporation) until the thickness of the silicon wafer reached 30 ⁇ m.
  • the polished surface of the silicon wafer was attached to the die bonding film of the dicing die bonding film under the following conditions. At this time, the bonding direction was adjusted so that the direction of the modified layer of the silicon wafer was along the MD direction and the TD direction of the base film of the dicing die bonding film. Furthermore, the portion of the adhesive layer protruding from the die bonding film was attached to the dicing ring. After that, the protective tape was peeled off from the silicon wafer.
  • the dicing die bonding film was stretched by cooling expansion under the following conditions using a die separator (DDS2300, manufactured by Disco Corporation), thereby separating the silicon wafer and the die bonding film. After that, the dicing film was shrunk by heating under the following conditions. Cooling expansion conditions: ⁇ Cooling temperature: 0°C ⁇ Cooling time: 120 seconds ⁇ Push-up amount: 10 mm ⁇ Push-up speed: 120 mm/second ⁇ Retention time after push-up: 10 seconds Heating conditions: ⁇ Heater temperature: 250°C ⁇ Heater rotation speed: 10°/second ⁇ Push-up amount: 8mm ⁇ Tape cooling waiting time: 10 seconds
  • the pressure-sensitive adhesive layer was irradiated with ultraviolet rays under the following conditions, thereby reducing the adhesive strength of the pressure-sensitive adhesive layer.
  • UV irradiation conditions ⁇ Ultraviolet illuminance: 100 mW/cm 2 ⁇ Ultraviolet irradiation amount: 150 mJ/cm 2
  • the width of the grid-like gap (kerf width) formed between adjacent chips was measured by microscopic observation.
  • the kerf width of the gap along the MD direction or TD direction around the chip is measured at two locations near each of the four positions that divide the portion corresponding to the outer periphery of the silicon wafer into quarters, and at one location in the center of the silicon wafer. It was measured. An average value of kerf widths of gaps along the MD or TD measured at a total of nine locations was obtained.
  • Table 1 shows the evaluation results.
  • the thickness of the die bonding film is 20 ⁇ m as in Reference Examples 1 to 3, the peeling of the die bonding film tends to occur easily in the process of dicing when the thickness of the pressure-sensitive adhesive layer is reduced.
  • the thickness of the die bonding film is 10 ⁇ m or less as in Examples 1 to 3 and Comparative Examples 1 to 3, even if the pressure-sensitive adhesive layer becomes thin, good retention is maintained in the process of dicing. was confirmed.
  • the thickness of the pressure-sensitive adhesive layer is less than 10 ⁇ m as in Examples 1 to 3, the splittability of the die bonding film is improved.
  • a thinner pressure-sensitive adhesive layer facilitates securing a large kerf width.

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  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

Disclosed is a dicing die-bonding film comprising: a die-bonding film; and a dicing film including a pressure-sensitive adhesive layer bonded to the die-bonding film. The thickness of an adhesive layer is 10 μm or less. The thickness of the pressure-sensitive adhesive layer is less than 10 μm. The dicing film may further include a substrate film, and the pressure-sensitive adhesive layer may be provided on the substrate film.

Description

ダイシングダイボンディングフィルム、及び、半導体装置を製造する方法Dicing die bonding film and method for manufacturing semiconductor device
　本開示は、ダイシングダイボンディングフィルム、及び、これを用いて半導体装置を製造する方法に関する。 The present disclosure relates to a dicing die bonding film and a method of manufacturing a semiconductor device using the same.
　半導体ウェハをダイシングにより分割する工程の間、半導体ウェハを固定するために利用されるダイシングフィルムと、チップとチップとの間又はチップと基板との間を接着するダイボンディングフィルムとが一体化されたダイシングダイボンディングフィルム（半導体加工用テープ）が、半導体装置の製造のために用いられることがある（例えば、特許文献１、２）。ダイシングダイボンディングフィルムを構成するダイボンディングフィルムは、一般に数十μｍ程度の厚みを有することが多い。 A dicing film used for fixing the semiconductor wafer during the process of dividing the semiconductor wafer by dicing and a die bonding film for bonding between chips or between a chip and a substrate are integrated. Dicing die bonding films (semiconductor processing tapes) are sometimes used for manufacturing semiconductor devices (for example, Patent Documents 1 and 2). A die bonding film constituting a dicing die bonding film generally has a thickness of about several tens of μm in many cases.
特許第６５３５１１７号公報Japanese Patent No. 6535117 特許第６９２８８５２号公報Japanese Patent No. 6928852
　半導体パッケージにおけるチップの積層数の増加、及びチップの薄化に伴って、１０μｍ以下の厚みを有する、極めて薄いダイボンディングフィルムの適用が望まれている。ところが、ダイボンディングフィルムが１０μｍ以下の厚みまで薄くなると、ダイシングダイボンディングフィルムを伸張させることを含む方法により半導体ウェハを分割する工程において、ダイボンディングフィルムが分断され難いことがあることが明らかとなった。ダイボンディングフィルムが容易に分断されないと、個片化されたダイボンディングフィルムが付着したチップをピックアップすることが困難となり、半導体製造の歩留まりの低下に繋がり得る。 With the increase in the number of stacked chips in semiconductor packages and the thinning of chips, application of an extremely thin die bonding film with a thickness of 10 μm or less is desired. However, when the die bonding film is thinned to a thickness of 10 μm or less, it has been found that the die bonding film may be difficult to divide in the process of dividing the semiconductor wafer by a method including stretching the dicing die bonding film. . If the die bonding film is not easily cut, it becomes difficult to pick up the individualized chips to which the die bonding film is attached, which may lead to a decrease in the yield of semiconductor manufacturing.
　本開示の一側面は、１０μｍ以下の厚みを有するダイボンディングフィルムを有するダイシングダイボンディングフィルムに関して、ダイシングダイボンディングフィルムを伸張させることを含む方法により半導体ウェハを分割する工程におけるダイボンディングフィルムの分断性を改善することに関する。 One aspect of the present disclosure relates to a dicing die bonding film having a die bonding film having a thickness of 10 μm or less. About improving.
　本開示の一側面は、ダイボンディングフィルムと、前記ダイボンディングフィルムに貼り合せられた粘着剤層を有するダイシングフィルムとを備えるダイシングダイボンディングフィルムに関する。前記ダイボンディングフィルムの厚みが１０μｍ以下であり、前記粘着剤層の厚みが１０μｍ未満である。 One aspect of the present disclosure relates to a dicing die bonding film including a die bonding film and a dicing film having an adhesive layer attached to the die bonding film. The die bonding film has a thickness of 10 μm or less, and the adhesive layer has a thickness of less than 10 μm.
　本開示の別の一側面は、前記ダイシングダイボンディングフィルムの前記ダイボンディングフィルムを半導体ウェハに貼り付けることと、前記ダイシングダイボンディングフィルムを伸張させることを含む方法により前記半導体ウェハ及び前記ダイボンディングフィルムを分割し、それにより、チップ及び個片化された前記ダイボンディングフィルムを有するダイボンディングフィルム付きチップを前記粘着剤層上に形成することと、を含む、半導体装置を製造する方法に関する。 Another aspect of the present disclosure is to separate the semiconductor wafer and the die bonding film by a method including: attaching the die bonding film of the dicing die bonding film to a semiconductor wafer; and stretching the dicing die bonding film. The present invention relates to a method of manufacturing a semiconductor device, comprising: dividing to thereby form a chip with a die bonding film having the die bonding film separated into chips and pieces on the adhesive layer.
　１０μｍ以下の厚みを有するダイボンディングフィルムを有するダイシングダイボンディングフィルムに関して、ダイシングダイボンディングフィルムを伸張させることを含む方法により半導体ウェハを分割する工程におけるダイボンディングフィルムの分断性を改善することができる。 Regarding the dicing die bonding film having a die bonding film having a thickness of 10 μm or less, a method including stretching the dicing die bonding film can improve the dividability of the die bonding film in the step of dividing the semiconductor wafer.
ダイシングダイボンディングフィルムの一例を示す平面図及び断面図である。1A and 1B are a plan view and a cross-sectional view showing an example of a dicing die bonding film; FIG. 半導体装置を製造する方法の一例を示す工程図である。It is process drawing which shows an example of the method of manufacturing a semiconductor device. 半導体装置を製造する方法の一例を示す工程図である。It is process drawing which shows an example of the method of manufacturing a semiconductor device.
　本発明は以下に説明される例に限定されない。以下の説明において、各構成要素（ステップ等も含む）は、特に明示した場合を除き、必須ではない。各図における構成要素の大きさは概念的なものであり、構成要素間の大きさの相対的な関係は各図に示されたものに限定されない。本開示における数値及びその範囲は、本発明を制限するものではない。本明細書において「～」を用いて示された数値範囲は、「～」の前後に記載される数値をそれぞれ最小値及び最大値として含む範囲を示す。本明細書中に段階的に記載されている数値範囲において、一つの数値範囲で記載された上限値又は下限値は、他の段階的な記載の数値範囲の上限値又は下限値に置き換えてもよい。本明細書中に記載されている数値範囲において、その数値範囲の上限値又は下限値は、実施例に示されている値に置き換えてもよい。 The present invention is not limited to the examples described below. In the following description, each component (including steps, etc.) is not essential unless otherwise specified. The sizes of the components in each figure are conceptual, and the relative sizes of the components are not limited to those shown in each figure. The numerical values and their ranges in this disclosure are not intended to limit the invention. In this specification, the numerical range indicated using "to" indicates the range including the numerical values before and after "to" as the minimum and maximum values, respectively. In the numerical ranges described stepwise in this specification, the upper limit or lower limit described in one numerical range may be replaced with the upper limit or lower limit of the numerical range described in other steps. good. In the numerical ranges described herein, the upper or lower limits of the numerical ranges may be replaced with the values shown in the examples.
　本明細書において、（メタ）アクリレートは、アクリレート又はそれに対応するメタクリレートを意味する。（メタ）アクリロイル基、（メタ）アクリル共重合体等の他の類似表現についても同様である。本明細書に例示される各成分及び材料は、特に断らない限り、１種を単独で使用してもよく、２種以上を併用して使用してもよい。 In this specification, (meth)acrylate means acrylate or its corresponding methacrylate. The same applies to other similar expressions such as (meth)acryloyl group and (meth)acrylic copolymer. Each component and material exemplified in this specification may be used singly or in combination of two or more unless otherwise specified.
　図１の（ａ）は、ダイシングダイボンディングフィルムの一例を示す平面図であり、図１の（ｂ）は図１の（ａ）のＢ－Ｂ線に沿う断面図である。図１に示されるダイシングダイボンディングフィルム１０は、ダイボンディングフィルム１と、ダイボンディングフィルム１に貼り合せられた粘着剤層２を有するダイシングフィルム５とから構成される。ダイシングフィルム５は、基材フィルム３を有しており、基材フィルム３上に粘着剤層２が設けられている。図１には、ダイボンディングフィルム１が貼り付けられた半導体ウェハＷａも示されている。 (a) of FIG. 1 is a plan view showing an example of a dicing die bonding film, and (b) of FIG. 1 is a cross-sectional view taken along line BB of (a) of FIG. A dicing die-bonding film 10 shown in FIG. The dicing film 5 has a base film 3 and an adhesive layer 2 is provided on the base film 3 . FIG. 1 also shows the semiconductor wafer Wa to which the die bonding film 1 is attached.
　ダイボンディングフィルム１は、チップを他のチップ又は基板と接着するための接着剤フィルムであり、ダイアタッチフィルム（ＤＡＦ）と称されることもある。図１に例示されるダイボンディングフィルム１は、半導体ウェハＷａの主面全体を覆う円形の主面を有する。 The die bonding film 1 is an adhesive film for bonding a chip to another chip or substrate, and is sometimes called a die attach film (DAF). A die bonding film 1 illustrated in FIG. 1 has a circular main surface covering the entire main surface of a semiconductor wafer Wa.
　ダイボンディングフィルム１は、１０μｍ以下の厚みを有することができる。ダイボンディングフィルム１の厚みが１０μｍ以下であることは、例えば多層のチップを有する薄い半導体パッケージの製造のために有利である。ダイボンディングフィルム１の厚みは、９μｍ以下、８μｍ以下又は７μｍ以下であってもよく、１μｍ以上、２μｍ以上、３μｍ以上、４μｍ以上、又は５μｍ以上であってもよい。 The die bonding film 1 can have a thickness of 10 μm or less. The die bonding film 1 having a thickness of 10 μm or less is advantageous for manufacturing a thin semiconductor package having a multilayer chip, for example. The thickness of the die bonding film 1 may be 9 μm or less, 8 μm or less, or 7 μm or less, or may be 1 μm or more, 2 μm or more, 3 μm or more, 4 μm or more, or 5 μm or more.
　ダイボンディングフィルム１は、チップの接着のために通常用いられる接着剤から形成されたフィルムであることができる。ダイボンディングフィルム１は熱硬化性接着剤であってもよい。ダイボンディングフィルム１を構成する熱硬化性接着剤は、例えば、高分子量樹脂成分と、熱硬化性成分とを含む。 The die bonding film 1 can be a film formed from an adhesive normally used for chip bonding. The die bonding film 1 may be a thermosetting adhesive. The thermosetting adhesive constituting the die bonding film 1 contains, for example, a high molecular weight resin component and a thermosetting component.
　ダイボンディングフィルム１に含まれ得る高分子量樹脂成分は、例えば、アクリルゴム、ポリイミド、及びフェノキシ樹脂からなる群から選ばれる少なくとも１種の樹脂を含んでもよい。高分子量樹脂成分がエポキシ基等の反応性基を有していてもよい。高分子量樹脂成分の重量平均分子量（ＧＰＣ法による標準ポリスチレン換算値）が、１０万～３００万であってもよい。高分子量樹脂成分の含有量が、ダイボンディングフィルム１の全体質量１００質量部に対して３０～８０質量部であってもよい。 The high molecular weight resin component that can be contained in the die bonding film 1 may contain, for example, at least one resin selected from the group consisting of acrylic rubber, polyimide, and phenoxy resin. The high molecular weight resin component may have reactive groups such as epoxy groups. The weight-average molecular weight of the high-molecular-weight resin component (converted to standard polystyrene by GPC method) may be 100,000 to 3,000,000. The content of the high molecular weight resin component may be 30 to 80 parts by mass with respect to 100 parts by mass of the die bonding film 1 as a whole.
　ダイボンディングフィルム１に含まれ得る熱硬化性成分は、自己重合及び／又は硬化剤との反応により架橋構造を形成する反応性基を有する化合物である。熱硬化性成分は、例えば、エポキシ樹脂、ビスマレイミド樹脂、トリアジン樹脂、及びフェノール樹脂からなる群から選ばれる少なくとも１種を含んでもよい。熱硬化性成分の含有量が、ダイボンディングフィルム１の量１００質量部に対して１～３０質量部であってもよい。 The thermosetting component that can be contained in the die bonding film 1 is a compound having a reactive group that forms a crosslinked structure through self-polymerization and/or reaction with a curing agent. The thermosetting component may include, for example, at least one selected from the group consisting of epoxy resins, bismaleimide resins, triazine resins, and phenolic resins. The content of the thermosetting component may be 1 to 30 parts by mass with respect to 100 parts by mass of the die bonding film 1 .
　ダイボンディングフィルム１を構成する熱硬化性接着剤は、必要により他の成分を含んでもよい。他の成分の例としては、熱硬化性成分と反応する硬化剤、熱硬化性成分と硬化剤との反応を促進する硬化促進剤、カップリング剤（例えばシランカップリング剤）、及びフィラー（例えばシリカ）が挙げられる。 The thermosetting adhesive that constitutes the die bonding film 1 may contain other components if necessary. Examples of other components include a curing agent that reacts with the thermosetting component, a curing accelerator that accelerates the reaction between the thermosetting component and the curing agent, a coupling agent (e.g., silane coupling agent), and a filler (e.g., silica).
　ダイシングフィルム５は、矩形の主面を有する基材フィルム３と、基材フィルム３上に設けられた粘着剤層２とを有する。粘着剤層２は、基材フィルム３に接する主面２ａ、及びダイボンディングフィルム１と接する主面２ｂとを有する。粘着剤層２の主面２ａ，２ｂは、ダイボンディングフィルム１の主面全体を覆うサイズの円形の面であることができる。 The dicing film 5 has a base film 3 having a rectangular main surface and an adhesive layer 2 provided on the base film 3 . The pressure-sensitive adhesive layer 2 has a main surface 2 a in contact with the base film 3 and a main surface 2 b in contact with the die bonding film 1 . The main surfaces 2 a and 2 b of the adhesive layer 2 can be circular surfaces sized to cover the entire main surface of the die bonding film 1 .
　粘着剤層２は、１０μｍ未満の厚みを有してもよい。粘着剤層２の厚みが１０μｍ未満であると、１０μｍ以下の厚みを有するダイボンディングフィルム１が、ダイシングダイボンディングフィルム１０を伸張させることを含む方法により半導体ウェハＷａを分割する工程において特に容易に分断される。また、ダイボンディングフィルム１の厚みが１０μｍ以下である場合、粘着剤層２の厚みが１０μｍ未満であっても、半導体ウェハＷａの分割によって形成されたチップが飛散することが十分に抑制される。同様の観点から、粘着剤層２の厚みが９μｍ以下、８μｍ以下、７μｍ以下、６μｍ以下、５μｍ以下、４μｍ以下、又は３μｍ以下であってもよい。粘着剤層２の厚みが０．５μｍ以上、１μｍ以上、又は２μｍ以上であってもよい。 The adhesive layer 2 may have a thickness of less than 10 μm. When the thickness of the adhesive layer 2 is less than 10 μm, the die bonding film 1 having a thickness of 10 μm or less is particularly easily divided in the step of dividing the semiconductor wafer Wa by a method including stretching the dicing die bonding film 10. be done. Further, when the thickness of the die bonding film 1 is 10 μm or less, even if the thickness of the adhesive layer 2 is less than 10 μm, scattering of chips formed by dividing the semiconductor wafer Wa is sufficiently suppressed. From the same point of view, the thickness of the adhesive layer 2 may be 9 μm or less, 8 μm or less, 7 μm or less, 6 μm or less, 5 μm or less, 4 μm or less, or 3 μm or less. The thickness of the adhesive layer 2 may be 0.5 μm or more, 1 μm or more, or 2 μm or more.
　粘着剤層２は、ダイシングフィルムにおいて通常用いられる粘着剤によって形成された層であることができる。粘着剤層２を構成する粘着剤は、感圧型粘着剤又は紫外線硬化型粘着剤であってもよい。紫外線硬化型粘着剤は、紫外線照射によって粘着性が低下する性質を有する粘着剤である。紫外線硬化型粘着剤を用いると、例えばダイボンディングフィルムが付着したチップをピックアップする前に、紫外線照射により粘着剤層２の粘着力を低下させることができる。紫外線硬化型粘着剤は、例えば、（メタ）アクリロイル基を有するアクリル樹脂を含んでいてもよい。アクリル樹脂が水酸基を有していてもよい。アクリル樹脂は、（メタ）アクリロイル酸エステルをモノマー単位として含む重合体である。紫外線硬化型粘着剤は、必要により、光重合開始剤、及び架橋剤（例えばポリイソシアネート化合物）等の他の成分を更に含んでもよい。架橋剤は、アクリル樹脂と反応する反応性基を有する化合物であり、その例としてはポリイソシアネート化合物が挙げられる。 The adhesive layer 2 can be a layer formed of an adhesive commonly used in dicing films. The adhesive constituting the adhesive layer 2 may be a pressure sensitive adhesive or an ultraviolet curable adhesive. An ultraviolet curable adhesive is an adhesive that has the property that its adhesiveness is reduced by ultraviolet irradiation. If an ultraviolet curable adhesive is used, the adhesive strength of the adhesive layer 2 can be reduced by irradiating ultraviolet rays before picking up the chip to which the die bonding film is attached, for example. The UV-curable pressure-sensitive adhesive may contain, for example, an acrylic resin having a (meth)acryloyl group. The acrylic resin may have a hydroxyl group. Acrylic resins are polymers containing (meth)acryloyl acid esters as monomer units. If necessary, the UV-curable pressure-sensitive adhesive may further contain other components such as a photopolymerization initiator and a cross-linking agent (for example, a polyisocyanate compound). A cross-linking agent is a compound having a reactive group that reacts with an acrylic resin, and examples thereof include polyisocyanate compounds.
　ダイボンディングフィルム１に対する粘着剤層２のピール強度が高いことは、半導体ウェハＷａの分割によってチップを形成する工程において、チップの飛散の抑制、及びダイボンディングフィルム１の粘着剤層２からの剥離の抑制に寄与する。係る観点から、例えば、ダイボンディングフィルム１に対する粘着剤層２の３０°ピール強度が６．０Ｎ／２５ｍｍ以上であってもよい。３０°ピール強度は、粘着剤層２をダイボンディングフィルム１の主面に対して３０°の方向に向けて引き剥がしたときの応力から求められるピール強度である。３０°ピール強度の測定方法の詳細は、後述の実施例において説明される。粘着剤層２が紫外線硬化型粘着剤によって形成されている場合、紫外線照射前の粘着剤層２が示す３０°ピール強度が６．０Ｎ／２５ｍｍ以上であってもよい。ダイボンディングフィルム１に対する粘着剤層２の３０°ピール強度（紫外線照射前の３０°ピール強度）が、２０Ｎ／２５ｍｍ以下、１７．５Ｎ／２５ｍｍ以下、又は１５Ｎ／２５ｍｍ以下であってもよい。 The high peel strength of the adhesive layer 2 with respect to the die bonding film 1 suppresses scattering of the chips and prevents peeling of the die bonding film 1 from the adhesive layer 2 in the process of forming chips by dividing the semiconductor wafer Wa. Contributes to suppression. From this point of view, for example, the 30° peel strength of the adhesive layer 2 to the die bonding film 1 may be 6.0 N/25 mm or more. The 30° peel strength is the peel strength obtained from the stress when the adhesive layer 2 is peeled off in the direction of 30° with respect to the main surface of the die bonding film 1 . The details of the method for measuring the 30° peel strength will be described in Examples below. When the adhesive layer 2 is formed of an ultraviolet-curing adhesive, the 30° peel strength of the adhesive layer 2 before ultraviolet irradiation may be 6.0 N/25 mm or more. The 30° peel strength (30° peel strength before UV irradiation) of the adhesive layer 2 to the die bonding film 1 may be 20 N/25 mm or less, 17.5 N/25 mm or less, or 15 N/25 mm or less.
　ダイシングフィルム５を構成する基材フィルム３は、ダイシングダイボンディングフィルムを伸張させることを含む方法により半導体ウェハを分割する工程において通常用いられるダイシングダイボンディングフィルムを構成する基材フィルムから、選択することができる。基材フィルム３は樹脂フィルムであってもよく、例えば、ポリエステル（ポリエチレンテレフタレート（ＰＥＴ）、ポリブチレンテレフタレート、ポリエチレンナフタレート等）、ポリオレフィン（ポリエチレンフィルム、ポリプロピレン等）、ポリカーボネート、ポリアミド、ポリイミド、ポリアミドイミド、ポリエーテルイミド、ポリエーテルスルフィド、ポリエーテルスルホン、ポリエーテルケトン、ポリフェニレンエーテル、及びポリフェニレンスルフィドから選ばれる樹脂を含む樹脂フィルムであってもよい。基材フィルム３は、単層フィルムであってもよく、二種以上のフィルムから構成される多層フィルムであってもよい。基材フィルム３の厚みは、例えば、１０μｍ以上、１５μｍ以上、又は２０μｍ以上であってもよく、２００μｍ以下、１７５μｍ以下又は１５０μｍ以下であってもよい。 The base film 3 constituting the dicing film 5 can be selected from base films constituting dicing die bonding films that are commonly used in a process of dividing a semiconductor wafer by a method including stretching a dicing die bonding film. can. The base film 3 may be a resin film such as polyester (polyethylene terephthalate (PET), polybutylene terephthalate, polyethylene naphthalate, etc.), polyolefin (polyethylene film, polypropylene, etc.), polycarbonate, polyamide, polyimide, polyamideimide. , polyetherimide, polyether sulfide, polyether sulfone, polyether ketone, polyphenylene ether, and polyphenylene sulfide. The base film 3 may be a single layer film or a multilayer film composed of two or more types of films. The thickness of the base film 3 may be, for example, 10 μm or more, 15 μm or more, or 20 μm or more, and may be 200 μm or less, 175 μm or less, or 150 μm or less.
　図１に例示される基材フィルム３は矩形の主面を有するが、基材フィルム３の形状はこれに限定されない。基材フィルム３が長尺のフィルムであってもよい。長尺の１枚の基材フィルム３上に複数の粘着剤層２が配置されていてもよい。 Although the base film 3 illustrated in FIG. 1 has a rectangular main surface, the shape of the base film 3 is not limited to this. The base film 3 may be a long film. A plurality of adhesive layers 2 may be arranged on one long base film 3 .
　図２及び図３は、以上例示されたダイシングダイボンディングフィルムを用いて半導体装置を製造する方法の一例を示す工程図である。図２及び図３に示される方法は、ダイシングダイボンディングフィルム１０のダイボンディングフィルム１を半導体ウェハＷａに貼り付けることと、ダイシングダイボンディングフィルム１０を伸張させることを含む方法により、半導体ウェハＷａ及びダイボンディングフィルム１を分割し、それにより、チップＣ及び個片化されたダイボンディングフィルム１ａを有する複数のダイボンディングフィルム付きチップ３０を粘着剤層２上に形成することと、ダイシングフィルム５を加熱により収縮させることと、ダイボンディングフィルム付きチップ３０をピックアップすることとを含む。 2 and 3 are process diagrams showing an example of a method of manufacturing a semiconductor device using the dicing die bonding film exemplified above. The method shown in FIGS. 2 and 3 includes bonding the die bonding film 1 of the dicing die bonding film 10 to the semiconductor wafer Wa, and stretching the dicing die bonding film 10 to obtain the semiconductor wafer Wa and the die. Dividing the bonding film 1 to thereby form a plurality of die bonding film-attached chips 30 having chips C and individualized die bonding films 1a on the adhesive layer 2, and heating the dicing film 5. It includes shrinking and picking up the chip 30 with the die bonding film.
　半導体ウェハＷａは、２つの主面Ｆ１及びＦ２を有する。例えば、主面Ｆ１が回路面で、主面Ｆ２が回路面の反対側の裏面であってもよい。半導体ウェハＷａがシリコンウェハであってもよい。ステルスダイシング法により半導体ウェハＷａを分割する場合、ダイボンディングフィルム１が貼り付けられる前に、半導体ウェハＷａにレーザ光を照射して、切断予定ラインに沿う改質層を形成してもよい。その後、半導体ウェハＷａに対してバックグラインディング及びポリッシングの処理をしてもよい。 The semiconductor wafer Wa has two main surfaces F1 and F2. For example, the main surface F1 may be the circuit surface, and the main surface F2 may be the back surface opposite to the circuit surface. The semiconductor wafer Wa may be a silicon wafer. When the semiconductor wafer Wa is divided by the stealth dicing method, the semiconductor wafer Wa may be irradiated with a laser beam to form a modified layer along the planned cutting line before the die bonding film 1 is attached. After that, the semiconductor wafer Wa may be subjected to back grinding and polishing.
　図２の（ａ）の例の場合、半導体ウェハＷａの主面Ｆ２にダイボンディングフィルム１が接する向きで、ダイボンディングフィルム１が半導体ウェハＷａに貼り付けられる。更に、粘着剤層２のダイボンディングフィルム１側の主面２ｂに対して、半導体ウェハＷａを囲むようにダイシングリングＤＲが貼り付けられる。 In the example of FIG. 2(a), the die bonding film 1 is attached to the semiconductor wafer Wa in such a direction that the die bonding film 1 is in contact with the main surface F2 of the semiconductor wafer Wa. Further, a dicing ring DR is attached to the main surface 2b of the adhesive layer 2 on the die bonding film 1 side so as to surround the semiconductor wafer Wa.
　その後、図２の（ｂ）に示されるように、低温条件下で、ダイシングフィルム５のダイシングリングＤＲの内側の領域をリングＲａで突き上げることによって、ダイシングフィルム５を伸張させる。このときの温度は例えば－１５～０℃であってもよい。ステルスダイシング法の場合、ダイシングフィルム５の伸張により、半導体ウェハＷａ及びダイボンディングフィルム１が半導体ウェハＷａ内の改質層に沿って分断される。この分断により、半導体ウェハＷａが複数のチップＣに分割され、ダイボンディングフィルム１が個々のチップＣに付着する個片化された部分１ａに分割される。すなわち、チップＣ及び個片化されたダイボンディングフィルム１ａを有する、ダイボンディングフィルム付きチップ３０が粘着剤層２上に形成される。 After that, as shown in FIG. 2(b), the dicing film 5 is stretched by pushing up the region of the dicing film 5 inside the dicing ring DR with the ring Ra under low temperature conditions. The temperature at this time may be, for example, -15 to 0°C. In the case of the stealth dicing method, the extension of the dicing film 5 divides the semiconductor wafer Wa and the die bonding film 1 along the modified layer in the semiconductor wafer Wa. By this division, the semiconductor wafer Wa is divided into a plurality of chips C, and the die bonding film 1 is divided into individualized portions 1a attached to the individual chips C. As shown in FIG. That is, a chip 30 with a die bonding film is formed on the adhesive layer 2, having the chip C and the individualized die bonding film 1a.
　リングＲａが下げられた後、図３の（ａ）に示されるように、ダイシングフィルム５のうちダイシングリングＤＲとダイボンディングフィルム付きチップ３０との間の領域がヒータＨによって加熱される。加熱された部分のダイシングフィルム５の収縮により、ダイボンディングフィルム付きチップ３０同士の間隔を更に広げることができる。 After the ring Ra is lowered, the heater H heats the area of the dicing film 5 between the dicing ring DR and the chip 30 with the die bonding film, as shown in FIG. 3(a). Due to the shrinkage of the dicing film 5 at the heated portion, the distance between the chips 30 with the die bonding film can be further widened.
　必要に応じて紫外線照射によって粘着剤層２の粘着力を低下させた後、図３の（ｂ）に示されるように、突き上げ冶具４２によって突き上げられた個々のダイボンディングフィルム付きチップ３０が、吸引コレット４４によりピックアップされる。ピックアップされたダイボンディングフィルム付きチップ３０は、回路基板又は他のチップに圧着されてもよい。 After reducing the adhesive strength of the adhesive layer 2 by ultraviolet irradiation as necessary, as shown in FIG. It is picked up by collet 44 . The picked-up chip 30 with a die bonding film may be crimped to a circuit board or another chip.
　本発明は以下の実施例に限定されない。特に記述がない限り、使用された材料は全て試薬として入手されたものである。 The present invention is not limited to the following examples. All materials used were obtained as reagents unless otherwise noted.
実施例１
１．アクリル樹脂の合成
　スリーワンモータ、撹拌翼及び窒素導入管が備え付けられた容量２０００ｍｌのフラスコに以下の成分を入れ、反応液を形成した。
・酢酸エチル（溶剤）：６３５ｇ
・２－エチルヘキシルアクリレート：３９５ｇ
・２－ヒドロキシエチルアクリレート：１００ｇ
・メタクリル酸：５ｇ
・アゾビスイソブチロニトリル：０．２ｇ Example 1
1. Synthesis of Acrylic Resin The following ingredients were placed in a 2000 ml flask equipped with a three-one motor, a stirring blade and a nitrogen inlet tube to form a reaction solution.
・ Ethyl acetate (solvent): 635 g
・2-ethylhexyl acrylate: 395 g
・2-Hydroxyethyl acrylate: 100 g
・Methacrylic acid: 5g
・ Azobisisobutyronitrile: 0.2 g
　十分に均一になるまで反応液を撹拌した後、流量５００ｍＬ／分の窒素ガスによる６０分間のバブリングにより、系中の溶存酸素を取り除いた。反応液を１時間かけて７８℃まで昇温し、同温度で６時間、重合反応を進行させた。次いで、反応液を、スリーワンモータ、撹拌翼及び窒素導入管が備え付けられた容量２０００ｍＬの加圧釜に移した。加圧窯内で、圧力０．２８ＭＰａの雰囲気下、１２０℃に４．５時間、反応液を加温した。その後、生成した重合体を含む反応液を室温（２５℃、以下同様）まで冷却した。 After stirring the reaction solution until it became sufficiently uniform, dissolved oxygen in the system was removed by bubbling nitrogen gas at a flow rate of 500 mL/min for 60 minutes. The temperature of the reaction solution was raised to 78° C. over 1 hour, and the polymerization reaction was allowed to proceed at the same temperature for 6 hours. Then, the reaction solution was transferred to a 2000 mL capacity autoclave equipped with a three-one motor, a stirring blade and a nitrogen inlet tube. In a pressure kiln, the reaction solution was heated to 120° C. for 4.5 hours under an atmosphere of 0.28 MPa. After that, the reaction solution containing the produced polymer was cooled to room temperature (25° C., the same applies hereinafter).
　反応液に酢酸エチル４９０ｇを加えて反応液を撹拌した。次いで、メトキノン（重合禁止剤）０．０２５ｇ、及びジオクチルスズジラウレート（ウレタン化触媒）０．１０ｇを添加した。更に２－メタクリロイルオキシエチルイソシアネート（昭和電工株式会社製、カレンズＭＯＩ（商品名））８１ｇを反応液に加え、７０℃で６時間、反応液を加熱することにより、重合体と２－メタクリロイルオキシエチルイソシアネートとの反応を進行させた。反応液を室温に冷却した後、酢酸エチルを加え、メタクリロイルオキシ基及び水酸基を有するアクリル樹脂を濃度３５質量％で含むアクリル樹脂溶液を得た。 490 g of ethyl acetate was added to the reaction liquid and the reaction liquid was stirred. Then, 0.025 g of methoquinone (polymerization inhibitor) and 0.10 g of dioctyltin dilaurate (urethanization catalyst) were added. Furthermore, 81 g of 2-methacryloyloxyethyl isocyanate (manufactured by Showa Denko K.K., Karenz MOI (trade name)) was added to the reaction solution, and the reaction solution was heated at 70° C. for 6 hours to give a polymer and 2-methacryloyloxyethyl. The reaction with isocyanate was allowed to proceed. After cooling the reaction solution to room temperature, ethyl acetate was added to obtain an acrylic resin solution containing an acrylic resin having a methacryloyloxy group and a hydroxyl group at a concentration of 35 mass %.
　得られたアクリル樹脂溶液を６０℃で一晩真空乾燥し、残った固形分を全自動元素分析装置（エレメンタール社製、商品名：ｖａｒｉｏＥＬ）にて元素分析した。元素分析から得られた窒素含有量から、アクリル樹脂１ｇ当たりに導入された２－メタアクリロイルオキシエチル基の量を算出したところ、０．８９ｍｍｏｌ／ｇであった。 The obtained acrylic resin solution was vacuum-dried overnight at 60°C, and the remaining solid content was subjected to elemental analysis using a fully automatic elemental analyzer (manufactured by Elemental, trade name: varioEL). The amount of 2-methacryloyloxyethyl groups introduced per 1 g of the acrylic resin was calculated from the nitrogen content obtained from the elemental analysis and found to be 0.89 mmol/g.
　アクリル樹脂のＧＰＣ測定により、アクリル樹脂の重量平均分子量（標準ポリスチレン換算値）を求めた。ＧＰＣ測定のために、東ソー株式会社製のＳＤ－８０２２／ＤＰ－８０２０／ＲＩ－８０２０を使用した。カラムとして昭和電工マテリアルズ株式会社のＧｅｌｐａｃｋ　ＧＬ－Ａ１５０－Ｓ／ＧＬ－Ａ１６０－Ｓを用いた。溶離液としてテトラヒドロフランを用いた。アクリル樹脂の重量平均分子量は３５万であった。 The weight average molecular weight (standard polystyrene conversion value) of the acrylic resin was determined by GPC measurement of the acrylic resin. SD-8022/DP-8020/RI-8020 manufactured by Tosoh Corporation was used for GPC measurement. Gelpack GL-A150-S/GL-A160-S of Showa Denko Materials Co., Ltd. was used as a column. Tetrahydrofuran was used as the eluent. The acrylic resin had a weight average molecular weight of 350,000.
２．ダイシングフィルム
　以下の成分を混合することで、紫外線硬化型の粘着剤層を形成するためのワニス（溶剤以外の成分の濃度：２５質量％）を調製した。アクリル樹脂は「１．アクリル樹脂の合成」において合成されたものである。「固形分」は溶剤以外の成分の量を意味する。
・アクリル樹脂：１００質量部（固形分）
・光重合開始剤（１－ヒドロキシシクロヘキシルフェニルケトン、チバスペシャリティケミカルズ株式会社製、イルガキュア１８４、「イルガキュア」は登録商標）：２．０質量部
・架橋剤（多官能イソシアネート、日本ポリウレタン工業株式会社製、コロネートＬ、固形分７５％）：４．１質量部（固形分）
・酢酸エチル（溶剤） 2. Dicing Film A varnish (concentration of components other than solvent: 25% by mass) for forming an ultraviolet curable pressure-sensitive adhesive layer was prepared by mixing the following components. The acrylic resin was synthesized in "1. Synthesis of acrylic resin". "Solids" means the amount of ingredients other than solvent.
・ Acrylic resin: 100 parts by mass (solid content)
・Photopolymerization initiator (1-hydroxycyclohexylphenyl ketone, manufactured by Ciba Specialty Chemicals Co., Ltd., Irgacure 184, “Irgacure” is a registered trademark): 2.0 parts by mass ・Crosslinking agent (polyfunctional isocyanate, manufactured by Nippon Polyurethane Industry Co., Ltd. , Coronate L, solid content 75%): 4.1 parts by mass (solid content)
・Ethyl acetate (solvent)
　離型面を有するポリエチレンテレフタレートフィルム（幅４５０ｍｍ、長さ５００ｍｍ、厚さ３８μｍ）をカバーフィルムとして準備した。カバーフィルムの離型面に、アプリケータを用いてワニスを塗布し、塗膜を８０℃で５分間乾燥した。これにより、カバーフィルムと、その上に形成された粘着剤層（厚さ２μｍ）とからなる積層フィルムを得た。 A polyethylene terephthalate film (width 450 mm, length 500 mm, thickness 38 μm) having a release surface was prepared as a cover film. A varnish was applied to the release surface of the cover film using an applicator, and the coating film was dried at 80°C for 5 minutes. As a result, a laminate film composed of a cover film and an adhesive layer (thickness of 2 μm) formed thereon was obtained.
　コロナ処理が施された面を有するポリオレフィンフィルム（幅４５０ｍｍ、長さ５００ｍｍ、厚さ１００μｍ）を基材フィルムとして準備した。以下、基材フィルムの長手方向をＭＤ方向といい、ＭＤ方向に垂直な方向をＴＤ方向という。この基材フィルムを、コロナ処理が施された面が粘着剤層と接する向きで、上記積層フィルムの粘着剤層に室温にて貼り合わせた。次いで、全体をゴムロールで押圧することで、基材フィルムを粘着剤層に密着させた。基材フィルム、粘着剤層及びカバーフィルムを有するダイシングフィルムを室温で３日間放置した。 A polyolefin film (width 450 mm, length 500 mm, thickness 100 μm) having a corona-treated surface was prepared as a base film. Hereinafter, the longitudinal direction of the base film is referred to as the MD direction, and the direction perpendicular to the MD direction is referred to as the TD direction. This base film was attached to the pressure-sensitive adhesive layer of the laminate film at room temperature so that the corona-treated surface was in contact with the pressure-sensitive adhesive layer. Subsequently, the base film was adhered to the pressure-sensitive adhesive layer by pressing the whole with a rubber roll. A dicing film having a base film, an adhesive layer and a cover film was left at room temperature for 3 days.
３．ダイボンディングフィルム
　以下の成分、及びシクロヘキサノンを含む混合物を、攪拌してからビーズミルを用いて９０分混練した。
・エポキシ樹脂（Ｎ５００Ｐ－１０（商品名）、ＤＩＣ株式会社、クレゾールノボラック型エポキシ樹脂、エポキシ当量２００、分子量９８０、軟化点８５℃）：５５質量部
・フェノール樹脂（ＭＥＨ－７８００Ｍ（商品名）、明和化成株式会社製、水酸基当量１７５）：４５質量部
・シランカップリング剤１（ＮＵＣ　Ａ－１８９（商品名）、日本ユニカー株式会社製、γ－メルカプトプロピルトリメトキシシラン）：１．７質量部
・シランカップリング剤２（ＮＵＣＡ－１１６０（商品名）、日本ユニカー株式会社製、γ－ウレイドプロピルトリエトキシシラン）：０．２質量部
・フィラー（アエロジルＲ９７２（商品名）、日本アエロジル株式会社製、シリカ、平均粒径０．０１６μｍ）：３２質量部
　「アエロジルＲ９７２」は、有機基（例えば、メチル基）を表面に有するシリカ粒子である。 3. Die Bonding Film A mixture containing the following ingredients and cyclohexanone was stirred and then kneaded using a bead mill for 90 minutes.
・ Epoxy resin (N500P-10 (trade name), DIC Corporation, cresol novolak type epoxy resin, epoxy equivalent 200, molecular weight 980, softening point 85 ° C.): 55 parts by mass ・ Phenolic resin (MEH-7800M (trade name), Meiwa Kasei Co., Ltd., hydroxyl equivalent 175): 45 parts by mass Silane coupling agent 1 (NUC A-189 (trade name), Nippon Unicar Co., Ltd., γ-mercaptopropyltrimethoxysilane): 1.7 parts by mass・ Silane coupling agent 2 (NUCA-1160 (trade name), manufactured by Nippon Unicar Co., Ltd., γ-ureidopropyltriethoxysilane): 0.2 parts by mass ・ Filler (Aerosil R972 (trade name), manufactured by Nippon Aerosil Co., Ltd. , silica, average particle size 0.016 μm): 32 parts by mass “Aerosil R972” is silica particles having an organic group (for example, a methyl group) on the surface.
　混練後の混合物に以下の成分を加え、混合物を更に撹拌した。その後、真空脱気することによって、ダイボンディングフィルム形成用のワニスを得た。
・エポキシ基を有するアクリルゴム（ＨＴＲ－８６０Ｐ－３（商品名）、ナガセケムテックス株式会社製、グリシジルアクリレート又はグリシジルメタクリレートの含有量：３質量％、重量平均分子量：８０万）：２８０質量部
・硬化促進剤（キュアゾール２ＰＺ－ＣＮ（商品名）、「キュアゾール」は登録商標、四国化成工業株式会社製、１－シアノエチル－２－フェニルイミダゾール）：０．５質量部 The following components were added to the kneaded mixture, and the mixture was further stirred. After that, vacuum deaeration was performed to obtain a varnish for forming a die bonding film.
・ Acrylic rubber having an epoxy group (HTR-860P-3 (trade name), manufactured by Nagase ChemteX Corporation, content of glycidyl acrylate or glycidyl methacrylate: 3% by mass, weight average molecular weight: 800,000): 280 parts by mass ・Curing accelerator (Curesol 2PZ-CN (trade name), “Curesol” is a registered trademark, manufactured by Shikoku Kasei Kogyo Co., Ltd., 1-cyanoethyl-2-phenylimidazole): 0.5 parts by mass
　離型面を有するポリエチレンテレフタレートフィルム（厚さ３５μｍ）をキャリアフィルムとして準備した。キャリアフィルムの離型面に、ダイボンディングフィルム形成用のワニスを塗布し、塗膜を１４０℃で５分間加熱乾燥した。これにより、キャリアフィルムと、その上に形成されたＢステージ状態のダイボンディングフィルム（厚さ７μｍ）とからなる積層フィルムを得た。 A polyethylene terephthalate film (35 μm thick) having a release surface was prepared as a carrier film. A varnish for forming a die bonding film was applied to the release surface of the carrier film, and the coating film was dried by heating at 140° C. for 5 minutes. As a result, a laminate film composed of the carrier film and the B-stage die bonding film (thickness 7 μm) formed thereon was obtained.
４．ダイシングダイボンディングフィルムの作製
　ダイボンディングフィルムを有する積層フィルムを、円形（直径：３１２ｍｍ）にカットした。円形のダイボンディングフィルムに対して、カバーフィルムを剥離したダイシングフィルムを、粘着剤層がダイボンディングフィルムに接する向きで貼り付けた。形成された積層体を室温で１日放置した。その後、ダイシングフィルムのうちダイボンディングフィルムに貼り合せられた部分の外側をカットし、円形のダイボンディングフィルムと、ダイボンディングフィルムを覆い、ダイボンディングフィルムからはみ出した部分を有する円形（直径：３７０ｍｍ）のダイシングフィルムとを有するダイシングダイボンディングフィルムを得た。同様の操作により、後述の種々の評価試験に供するための複数のダイシングダイボンディングフィルムを作製した。 4. Preparation of Dicing Die Bonding Film A laminate film having a die bonding film was cut into a circular shape (diameter: 312 mm). The dicing film from which the cover film was peeled off was attached to the circular die bonding film so that the pressure-sensitive adhesive layer was in contact with the die bonding film. The formed laminate was left at room temperature for one day. After that, cut the outside of the part of the dicing film bonded to the die bonding film, cover the circular die bonding film and the die bonding film, and have a circular (diameter: 370 mm) part that protrudes from the die bonding film A dicing die bonding film having a dicing film was obtained. By the same operation, a plurality of dicing die bonding films were produced for use in various evaluation tests described later.
実施例２、３及び比較例１～３
　粘着剤層の厚さを表１に示されるとおりに変更したこと以外は実施例１と同様にして、複数のダイシングダイボンディングフィルムを作製した。 Examples 2, 3 and Comparative Examples 1-3
A plurality of dicing die bonding films were produced in the same manner as in Example 1, except that the thickness of the adhesive layer was changed as shown in Table 1.
参考例１～３
　ダイボンディングフィルムの厚さを２０μｍに変更し、粘着剤層の厚さを表１に示されるとおりに変更したこと以外は実施例１と同様にして、複数のダイシングダイボンディングフィルムを作製した。 Reference examples 1-3
A plurality of dicing die bonding films were produced in the same manner as in Example 1 except that the thickness of the die bonding film was changed to 20 μm and the thickness of the adhesive layer was changed as shown in Table 1.
５．評価
（１）ダイボンディングフィルムに対する粘着剤層の粘着力（３０°ピール強度）
　各ダイシングダイボンディングフィルムから、幅２５ｍｍ及び長さ１００ｍｍのサイズを有する測定試料（粘着剤層及び接着剤層からなる積層体）を切り出した。各測定試料に対して、照度１００ｍＷ／ｃｍ２、照射量１５０ｍＪ／ｃｍ２の条件で紫外線（ＵＶ）を照射した。紫外線照射前と紫外線照射後の測定試料について、ダイボンディングフィルムから剥離角度３０°で粘着剤層を引き剥がしたときのピール強度（３０°ピール強度）を測定した。引張速度は６０ｍｍ／分であった。測定試料は、温度２３℃、相対湿度４０％の環境下で保存し、同環境で３０°ピール強度を測定した。 5. Evaluation (1) Adhesion of adhesive layer to die bonding film (30° peel strength)
From each dicing die-bonding film, a measurement sample (laminate comprising an adhesive layer and an adhesive layer) having a size of 25 mm in width and 100 mm in length was cut out. Each measurement sample was irradiated with ultraviolet rays (UV) under the conditions of an illuminance of 100 mW/cm 2 and a dose of 150 mJ/cm 2 . The peel strength (30° peel strength) when the pressure-sensitive adhesive layer was peeled off from the die bonding film at a peel angle of 30° was measured for the measurement samples before and after UV irradiation. The pulling speed was 60 mm/min. The measurement sample was stored in an environment of 23° C. temperature and 40% relative humidity, and the 30° peel strength was measured in the same environment.
（２）プロセス性評価
（ｉ）ダイシング試験
　シリコンウェハ（直径：１２インチ、厚さ：７７５μｍ）の表面に保護テープを貼り付けた。シリコンウェハの保護テープ側及びその反対側の面に対して以下のステルスダイシング条件でレーザ光を照射することによって、ステルスダイシングのための改質層を、互いに直交する複数の直線から構成される切断予定ラインに沿ってシリコンウェハ内部に形成した。
ステルスダイシング条件：
・ステルスダイシング装置：ＤＦＬ７３６１（株式会社ディスコ製）
・レーザ発振器型式：半導体レーザ励起Ｑスイッチ固体レーザ
・波長：１３４２ｎｍ
・周波数：６０ｋＨｚ
・出力：０．８Ｗ
・パス数：２
・チップサイズ：３ｍｍ×１２ｍｍ
・ダイシング速度：８００ｍｍ／秒 (2) Processability Evaluation (i) Dicing Test A protective tape was attached to the surface of a silicon wafer (diameter: 12 inches, thickness: 775 μm). By irradiating the protection tape side and the opposite side of the silicon wafer with laser light under the following stealth dicing conditions, the modified layer for stealth dicing is cut from a plurality of straight lines perpendicular to each other. It was formed inside the silicon wafer along the planned line.
Stealth dicing conditions:
・ Stealth dicing device: DFL7361 (manufactured by Disco Co., Ltd.)
・Laser oscillator type: Semiconductor laser excitation Q-switched solid state laser ・Wavelength: 1342 nm
・Frequency: 60 kHz
・Output: 0.8W
・Number of passes: 2
・Chip size: 3mm x 12mm
・Dicing speed: 800mm/sec
　シリコンウェハの保護テープとは反対側の面を、グラインダポリッシャ装置（ＤＧＰ８７６１、株式会社ディスコ製）を用いて、シリコンウェハの厚さが３０μｍになるまで研磨した。シリコンウェハの研磨された面を、ダイシングダイボンディングフィルムのダイボンディングフィルムに以下の条件で貼り付けた。このとき、シリコンウェハの改質層の方向が、ダイシングダイボンディングフィルムの基材フィルムのＭＤ方向及びＴＤ方向に沿うように貼り付けの向きを調整した。更に、ダイボンディングフィルムからはみ出した部分の粘着剤層をダイシングリングに貼り付けた。その後、シリコンウェハから保護テープを剥離した。
貼付条件：
・貼付装置：ＤＦＭ２８００（株式会社ディスコ製）
・貼付温度：６５℃
・貼付速度：１０ｍｍ／ｓ
・貼付テンションレベル：レベル７ The surface of the silicon wafer opposite to the protective tape was polished using a grinder polisher (DGP8761, manufactured by Disco Corporation) until the thickness of the silicon wafer reached 30 μm. The polished surface of the silicon wafer was attached to the die bonding film of the dicing die bonding film under the following conditions. At this time, the bonding direction was adjusted so that the direction of the modified layer of the silicon wafer was along the MD direction and the TD direction of the base film of the dicing die bonding film. Furthermore, the portion of the adhesive layer protruding from the die bonding film was attached to the dicing ring. After that, the protective tape was peeled off from the silicon wafer.
Application conditions:
・Applying device: DFM2800 (manufactured by Disco Co., Ltd.)
・Attachment temperature: 65°C
・Applying speed: 10mm/s
・Paste tension level: Level 7
　次いで、ダイセパレータ（ＤＤＳ２３００、株式会社ディスコ製）を使用した以下の条件の冷却エキスパンドにより、ダイシングダイボンディングフィルムを伸張させ、それによりシリコンウェハ及びダイボンディングフィルムを分割した。その後、ダイシングフィルムを以下の条件の加熱により収縮させた。
冷却エキスパンド条件：
・冷却温度：０℃
・冷却時間：１２０秒
・突上げ量：１０ｍｍ
・突上げ速度：１２０ｍｍ／秒
・突上げ後の保持時間：１０秒
加熱条件：
・ヒータ温度：２５０℃
・ヒータ回転速度：１０°／秒
・突上げ量：８ｍｍ
・テープ冷却待ち時間：１０秒 Then, the dicing die bonding film was stretched by cooling expansion under the following conditions using a die separator (DDS2300, manufactured by Disco Corporation), thereby separating the silicon wafer and the die bonding film. After that, the dicing film was shrunk by heating under the following conditions.
Cooling expansion conditions:
・Cooling temperature: 0℃
・Cooling time: 120 seconds ・Push-up amount: 10 mm
・Push-up speed: 120 mm/second ・Retention time after push-up: 10 seconds Heating conditions:
・Heater temperature: 250°C
・Heater rotation speed: 10°/second ・Push-up amount: 8mm
・Tape cooling waiting time: 10 seconds
　ダイシングフィルムの収縮の後、粘着剤層に対して以下の条件で紫外線を照射し、それにより粘着剤層の粘着力を低下させた。
紫外線照射条件：
・紫外線の照度：１００ｍＷ／ｃｍ２
・紫外線の照射量：１５０ｍＪ／ｃｍ２ After shrinkage of the dicing film, the pressure-sensitive adhesive layer was irradiated with ultraviolet rays under the following conditions, thereby reducing the adhesive strength of the pressure-sensitive adhesive layer.
UV irradiation conditions:
・Ultraviolet illuminance: 100 mW/cm 2
・Ultraviolet irradiation amount: 150 mJ/cm 2
（ｉｉ）プロセス性
保持性
　ダイシング試験の過程で、チップが飛散する現象の有無、及び、シリコンウェハからはみ出した部分の接着剤層と粘着剤層の間の剥離の有無を確認した。以下の基準で保持性を評価した。
Ａ：チップの飛散無し、且つ、接着剤層と粘着剤層の界面の剥離無し
Ｂ：チップの飛散無し、接着剤層と粘着剤層との界面の剥離有り
Ｃ：チップの飛散有り (ii) Maintainability of processability In the process of the dicing test, it was confirmed whether or not there was a phenomenon in which the chips were scattered, and whether or not there was peeling between the adhesive layer and the pressure-sensitive adhesive layer in the portion protruding from the silicon wafer. Retainability was evaluated according to the following criteria.
A: No scattering of chips and no peeling at the interface between the adhesive layer and the pressure-sensitive adhesive layer B: No scattering of chips, peeling at the interface between the adhesive layer and the pressure-sensitive adhesive layer C: Scattering of chips
分断性
　隣り合うチップの間のダイボンディングフィルムを全て観察し、ダイボンディングフィルムが分断されていない箇所の数に基づいて、分断性を以下の基準で評価した。
Ａ：０
Ｂ：１以上１０未満
Ｃ：１０以上
カーフ幅 Separability All of the die bonding film between adjacent chips was observed, and the splittability was evaluated according to the following criteria based on the number of portions where the die bonding film was not split.
A: 0
B: 1 or more and less than 10 C: 10 or more kerf width
　隣り合うチップの間に形成された、格子状の間隙の幅（カーフ幅）を顕微鏡観察により測定した。シリコンウェハの外周に相当する部分を４等分する４つの位置それぞれの近傍における２箇所、及び、シリコンウェハの中央部の１箇所において、チップ周囲のＭＤ方向又はＴＤ方向に沿う間隙のカーフ幅を測定した。合計９箇所において測定されたＭＤ方向又はＴＤ方向に沿う間隙のカーフ幅の平均値を求めた。 The width of the grid-like gap (kerf width) formed between adjacent chips was measured by microscopic observation. The kerf width of the gap along the MD direction or TD direction around the chip is measured at two locations near each of the four positions that divide the portion corresponding to the outer periphery of the silicon wafer into quarters, and at one location in the center of the silicon wafer. It was measured. An average value of kerf widths of gaps along the MD or TD measured at a total of nine locations was obtained.
ピックアップ性
　保持性、分断性及びカーフ幅の評価の後、以下の条件で１００個のダイボンディングフィルム付きチップをピックアップした。
ピックアップ条件：
・ダイボンダ装置：ＤＢ８３０－Ｐ（ファスフォードテクノロジ株式会社製）
・突上げピン：ＥＪＥＣＴＯＲ　ＮＥＥＤＬＥ　ＳＥＮ２－８３－０５（直径：０．７ｍｍ、先端形状：半径３５０μｍの半球、マイクロメカニクス社製）
・突き上げ高さ：２５０μｍ
・突き上げ速度：１ｍｍ／秒
・突上げピン数：８本
　ピックアップの成功率に基づいて、以下の基準でピックアップ性を評価した。Ａ：１００％
Ｂ：８０％以上１００％未満
Ｃ：６０％以上８０％未満 Pickup property After evaluation of holding property, splitting property and kerf width, 100 chips with a die bonding film were picked up under the following conditions.
Pickup conditions:
・ Die bonder device: DB830-P (manufactured by Fasford Technology Co., Ltd.)
・ Push-up pin: EJECTOR NEEDLE SEN2-83-05 (diameter: 0.7 mm, tip shape: hemisphere with a radius of 350 μm, manufactured by Micromechanics)
・Push-up height: 250 μm
Push-up speed: 1 mm/second Push-up pin count: 8 Based on the pick-up success rate, pick-up properties were evaluated according to the following criteria. A: 100%
B: 80% or more and less than 100% C: 60% or more and less than 80%
Figure JPOXMLDOC01-appb-T000001
Figure JPOXMLDOC01-appb-T000001
　表１に評価結果が示される。参考例１～３のようにダイボンディングフィルムの厚みが２０μｍである場合、粘着剤層の厚さが薄くなると、ダイシングの過程においてダイボンディングフィルムの剥離が生じ易くなる傾向がある。ところが、実施例１～３及び比較例１～３のようにダイボンディングフィルムの厚さが１０μｍ以下である場合、粘着剤層が薄くなってもダイシングの過程における良好な保持性が維持されることが確認された。更に、実施例１～３のように粘着剤層の厚さが１０μｍ未満であると、ダイボンディングフィルムの分断性が改善されることも確認された。加えて、粘着剤層が薄くなると大きなカーフ幅が確保され易いことも確認された。 Table 1 shows the evaluation results. When the thickness of the die bonding film is 20 μm as in Reference Examples 1 to 3, the peeling of the die bonding film tends to occur easily in the process of dicing when the thickness of the pressure-sensitive adhesive layer is reduced. However, when the thickness of the die bonding film is 10 μm or less as in Examples 1 to 3 and Comparative Examples 1 to 3, even if the pressure-sensitive adhesive layer becomes thin, good retention is maintained in the process of dicing. was confirmed. Furthermore, it was confirmed that when the thickness of the pressure-sensitive adhesive layer is less than 10 μm as in Examples 1 to 3, the splittability of the die bonding film is improved. In addition, it was confirmed that a thinner pressure-sensitive adhesive layer facilitates securing a large kerf width.
　１…ダイボンディングフィルム、１ａ…個片化されたダイボンディングフィルム、２…粘着剤層、３…基材フィルム、５…ダイシングフィルム、１０…ダイシングダイボンディングフィルム、３０…ダイボンディングフィルム付きチップ、Ｃ…チップ、Ｗａ…半導体ウェハ。 DESCRIPTION OF SYMBOLS 1... Die bonding film, 1a... Separated die bonding film, 2... Adhesive layer, 3... Base film, 5... Dicing film, 10... Dicing die bonding film, 30... Chip with die bonding film, C ... chip, Wa ... semiconductor wafer.

Claims (5)

  1. 　ダイボンディングフィルムと、
    　前記ダイボンディングフィルムに貼り合せられた粘着剤層を有するダイシングフィルムと、
    を備え、
    　前記ダイボンディングフィルムの厚みが１０μｍ以下であり、
    　前記粘着剤層の厚みが１０μｍ未満である、
    ダイシングダイボンディングフィルム。     a die bonding film;
    A dicing film having an adhesive layer attached to the die bonding film;
    with
    The thickness of the die bonding film is 10 μm or less,
    The pressure-sensitive adhesive layer has a thickness of less than 10 μm,
    Dicing die bonding film.
  2. 　前記ダイボンディングフィルムに対する前記粘着剤層の３０°ピール強度が６．０Ｎ／２５ｍｍ以上である、請求項１に記載のダイシングダイボンディングフィルム。 The dicing die bonding film according to claim 1, wherein the 30° peel strength of the adhesive layer to the die bonding film is 6.0 N/25 mm or more.
  3. 　前記ダイシングフィルムが基材フィルムを更に有し、前記基材フィルム上に前記粘着剤層が設けられている、請求項１又は２に記載のダイシングダイボンディングフィルム。 The dicing die bonding film according to claim 1 or 2, wherein the dicing film further has a base film, and the adhesive layer is provided on the base film.
  4. 　請求項１～３のいずれか一項に記載のダイシングダイボンディングフィルムの前記ダイボンディングフィルムを半導体ウェハに貼り付けることと、
    　前記ダイシングダイボンディングフィルムを伸張させることを含む方法により前記半導体ウェハ及び前記ダイボンディングフィルムを分割し、それにより、チップ及び個片化された前記ダイボンディングフィルムを有するダイボンディングフィルム付きチップを前記粘着剤層上に形成することと、
    を含む、半導体装置を製造する方法。     Attaching the die bonding film of the dicing die bonding film according to any one of claims 1 to 3 to a semiconductor wafer;
    The semiconductor wafer and the die bonding film are divided by a method including stretching the dicing die bonding film, thereby forming chips and chips with die bonding films having the die bonding films separated into the adhesive. forming on a layer;
    A method of manufacturing a semiconductor device, comprising:
  5. 　前記半導体ウェハ及び前記ダイボンディングフィルムを分割する方法がステルスダイシング法である、請求項４に記載の方法。 The method according to claim 4, wherein the method for dividing the semiconductor wafer and the die bonding film is a stealth dicing method.
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WO2019187184A1 (en) * 2018-03-28 2019-10-03 古河電気工業株式会社 Semiconductor processing tape
WO2020067054A1 (en) * 2018-09-26 2020-04-02 日立化成株式会社 Film-shaped adhesive, adhesive sheet, semiconductor device, and production method for semiconductor device
WO2021095302A1 (en) * 2019-11-15 2021-05-20 昭和電工マテリアルズ株式会社 Semiconductor device production method, dicing die-bonding integrated film, and production method therefor

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019187184A1 (en) * 2018-03-28 2019-10-03 古河電気工業株式会社 Semiconductor processing tape
WO2020067054A1 (en) * 2018-09-26 2020-04-02 日立化成株式会社 Film-shaped adhesive, adhesive sheet, semiconductor device, and production method for semiconductor device
WO2021095302A1 (en) * 2019-11-15 2021-05-20 昭和電工マテリアルズ株式会社 Semiconductor device production method, dicing die-bonding integrated film, and production method therefor

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