CN115443524A - Adhesive film for back grinding and method for manufacturing electronic device - Google Patents

Adhesive film for back grinding and method for manufacturing electronic device Download PDF

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Publication number
CN115443524A
CN115443524A CN202180029810.8A CN202180029810A CN115443524A CN 115443524 A CN115443524 A CN 115443524A CN 202180029810 A CN202180029810 A CN 202180029810A CN 115443524 A CN115443524 A CN 115443524A
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CN
China
Prior art keywords
electronic component
adhesive film
adhesive
film
resin layer
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Pending
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CN202180029810.8A
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Chinese (zh)
Inventor
安井浩登
栗原宏嘉
木下仁
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Mitsui Chemicals Tohcello Inc
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Mitsui Chemicals Tohcello Inc
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Publication of CN115443524A publication Critical patent/CN115443524A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • C09J7/381—Pressure-sensitive adhesives [PSA] based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C09J7/385—Acrylic polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer

Abstract

Provided is an adhesive film (50) for back grinding, which is provided with a base material layer (10) and an ultraviolet-curing adhesive resin layer (20) that is provided on one side of the base material layer (10), and which is used for protecting the surface of an electronic component (30), wherein the elongation at break of the adhesive resin layer (20) after ultraviolet curing is 20% to 200%.

Description

Adhesive film for back grinding and method for manufacturing electronic device
Technical Field
The present invention relates to an adhesive film for back grinding and a method for manufacturing an electronic device.
Background
In a manufacturing process of an electronic device, an adhesive film is attached to a circuit forming surface of an electronic component in order to fix the electronic component or prevent damage to the electronic component in a grinding process of the electronic component.
Such an adhesive film generally uses a film in which an adhesive resin layer is laminated on a base film.
With the progress of high-density mounting technology, electronic parts such as semiconductor wafers are required to be thinner and thicker, and for example, the thickness is required to be thinner and thicker by 50 μm or less.
As one of such thin and thick processing, there is a dicing method in which a groove having a predetermined depth is formed on the surface of an electronic component before grinding of the electronic component, and then grinding is performed to singulate the electronic component. In addition, there is also a stealth method in which an electronic component is singulated by irradiating the inside of the electronic component with laser light to form a modified region and then grinding the modified region before grinding.
Examples of the technique relating to the adhesive film for the pre-dicing method and the pre-stealth method include techniques described in patent document 1 (jp 2014-75560 a) and patent document 2 (jp 2016-72546 a).
Patent document 1 describes a surface protection sheet having an adhesive layer on a base material, and satisfies the following requirements (a) to (d).
(a) The Young's modulus of the base material is 450MPa or more
(b) The storage modulus of the adhesive layer at 25 ℃ is 0.10MPa or more
(c) The adhesive layer has a storage modulus at 50 ℃ of 0.20MPa or less
(d) The thickness of the adhesive layer is more than 30 μm
Patent document 1 describes: such a surface protective sheet can suppress water intrusion (sludge intrusion) into the protected surface of the workpiece from the gap formed by cutting the workpiece in the back grinding step of the workpiece, and prevent contamination of the protected surface of the workpiece.
Patent document 2 describes a pressure-sensitive adhesive tape for protecting a surface of a semiconductor wafer, which comprises a base resin film and a radiation-curable pressure-sensitive adhesive layer formed on at least one surface side of the base resin film, wherein the base resin film comprises at least 1 rigid layer having a tensile elastic modulus of 1 to 10GPa, and a peel force at a peel angle of 30 ° after radiation curing of the pressure-sensitive adhesive layer is 0.1 to 3.0N/25mm.
Patent document 2 describes: according to such a pressure-sensitive adhesive tape for protecting the surface of a semiconductor wafer, in the step of grinding the back surface of a semiconductor wafer to which the pre-dicing method or the pre-stealth method is applied, the semiconductor wafer can be processed without damage or contamination while suppressing scratch shift (kerf shift) of the singulated semiconductor chips.
Documents of the prior art
Patent document
Patent document 1: japanese laid-open patent publication No. 2014-75560
Patent document 2: japanese patent laid-open publication No. 2016-72546
Disclosure of Invention
Problems to be solved by the invention
According to the studies of the present inventors, it has been found that when an adhesive film is peeled off from an electronic component after a back-grinding step in a process for manufacturing an electronic device using a pre-dicing method, a pre-stealth method, or the like, adhesive residue is likely to occur on the electronic component side.
The present invention has been made in view of the above circumstances, and provides an adhesive film for back grinding that can suppress adhesive residue on the electronic component side when the adhesive film is peeled off from the electronic component after the back grinding step.
Means for solving the problems
The present inventors have made extensive studies to achieve the above object. As a result, the present inventors have found that, in an adhesive film including a base layer and an ultraviolet-curable adhesive resin layer, by using an adhesive resin layer having an elongation at break after ultraviolet curing in a specific range, it is possible to suppress adhesive residue on the electronic component side when the adhesive film is peeled from the electronic component after a back-grinding step, and thus the present invention has been completed.
According to the present invention, the adhesive film for back grinding and the method for manufacturing an electronic device shown below are provided.
[1]
An adhesive film for back grinding, which comprises a base material layer and an ultraviolet-curing adhesive resin layer arranged on one side of the base material layer and is used for protecting the surface of an electronic component,
the elongation at break of the adhesive resin layer after ultraviolet curing is 20% to 200%.
[2]
The adhesive film for back grinding according to the above [1],
the adhesive resin layer contains a (meth) acrylic resin having a polymerizable carbon-carbon double bond in the molecule and a photoinitiator.
[3]
The adhesive film for back grinding according to the above [1] or [2],
the electronic component is half-cut or formed with a modified layer.
[4]
The adhesive film for back grinding according to any one of the above [1] to [3],
the thickness of the adhesive resin layer is 10 μm to 100 μm.
[5]
The adhesive film for back surface polishing according to any one of the above [1] to [4],
the resin constituting the base layer contains one or more selected from the group consisting of polyolefin, polyester, polyamide, polyacrylate, polymethacrylate, polyvinyl chloride, polyvinylidene 1,1-dichloroethylene, polyimide, polyetherimide, ethylene-vinyl acetate copolymer, polyacrylonitrile, polycarbonate, polystyrene, ionomer, polysulfone, polyethersulfone and polyphenylene oxide.
[6]
A method for manufacturing an electronic device, comprising at least the steps of:
a step (A) of preparing a structure having an electronic component having a circuit-formed surface and an adhesive film bonded to the circuit-formed surface side of the electronic component,
a step (B) of back-grinding a surface of the electronic component opposite to the circuit forming surface, and
a step (C) of irradiating the adhesive film with ultraviolet rays and then removing the adhesive film from the electronic component,
the adhesive film is the adhesive film for back polishing as set forth in any one of [1] to [5 ].
[7]
The method of manufacturing an electronic device according to item [6] above,
the step (a) includes the steps of:
a step (A1) of selecting at least one of a step (A1-1) of half-cutting the electronic component and a step (A1-2) of irradiating the electronic component with a laser beam to form a modified layer on the electronic component,
and (A2) bonding the adhesive film for back grinding to the circuit forming surface side of the electronic component after the step (A1).
ADVANTAGEOUS EFFECTS OF INVENTION
According to the present invention, it is possible to provide an adhesive film for back grinding that can suppress adhesive residue on the electronic component side when the adhesive film is peeled off from the electronic component after the back grinding step.
Drawings
Fig. 1 is a cross-sectional view schematically showing an example of the structure of an adhesive film according to an embodiment of the present invention.
Fig. 2 is a sectional view schematically showing an example of the method of manufacturing an electronic device according to the embodiment of the present invention.
Detailed Description
Hereinafter, embodiments of the present invention will be described with reference to the drawings. In all the drawings, the same components are denoted by the same reference numerals, and the description thereof is omitted as appropriate. The drawing is a schematic drawing, and does not match the actual size ratio. In addition, "a to B" in the numerical range means a to B unless otherwise specified. In the present embodiment, "(meth) acrylic" refers to acrylic acid, methacrylic acid, or both acrylic acid and methacrylic acid.
1. Adhesive film
Fig. 1 is a cross-sectional view schematically showing an example of the structure of an adhesive film 50 according to the embodiment of the present invention.
As shown in fig. 1, the adhesive film 50 for back grinding according to the present embodiment is an adhesive film 50 for back grinding that includes a base material layer 10 and an ultraviolet-curable adhesive resin layer 20 provided on one surface side of the base material layer 10 and that protects the surface of an electronic component 30, and the elongation at break of the adhesive resin layer 20 after ultraviolet curing is 20% to 200%.
Here, the elongation at break of the adhesive resin layer 20 after the ultraviolet curing is a value measured by the following method.
(method)
A sample for measurement was prepared in which a layer having the same thickness, composition, etc. as the adhesive resin layer 20 of the adhesive film 50 for back polishing according to the present embodiment was laminated on the corona-treated surface of the ethylene-vinyl acetate copolymer extruded film (MFR: 1.7g/10min, vinyl acetate content: 9 mass%, thickness: 140 μm) after corona treatment, and a release film (separator) such as a polyethylene terephthalate film after silicone release treatment was further laminated on the adhesive resin layer 20 side.
Examples of the lamination method include the following methods.
An adhesive resin layer 20 was formed on the release-treated surface of the polyethylene terephthalate film after the silicone release treatment, and then an ethylene-vinyl acetate copolymer film after the corona treatment was laminated on the adhesive resin layer 20 to obtain a laminate. Subsequently, the obtained laminate was heated at 40 ℃ for 3 days in an oven to cure the laminate.
Then, from the resultsThe adhesive resin layer 20 was irradiated with 100mW/cm of irradiation intensity using a high pressure mercury lamp at 25 ℃ to the ethylene-vinyl acetate copolymer film side of the laminate 2 Irradiation amount of ultraviolet ray is 1080mJ/cm 2 Ultraviolet rays having a dominant wavelength of 365nm, to cure the adhesive resin layer 20 by light. Subsequently, the laminate obtained by photocuring the adhesive resin layer 20 was cut into pieces having a length of 110mm and a width of 10mm, and the polyethylene terephthalate film as a separator was peeled off from the laminate.
Next, the adhesive resin layer 20 and the ethylene-vinyl acetate copolymer film are sandwiched by a tensile tester (for example, shimadzu corporation, autograph AGS-X) so that the initial distance Lo between chucks is 50 mm. The sample was stretched at a rate of 30 mm/min, and the point at which the adhesive resin layer 20 was visually observed to break was defined as the breaking point, and the distance between chucks at this time was defined as L. The elongation at break (%) was determined as (L-Lo)/Lo X100 (%).
As described above, according to the studies by the present inventors, it has been found that, in the manufacturing process of an electronic device using, for example, the pre-dicing method, the pre-stealth method, and the like, when the adhesive film is peeled off from the electronic component after the back-grinding step, adhesive residue is likely to occur on the electronic component side.
The reason for this is not clear, but unlike the back-grinding step of a general electronic component, the adhesive film 50 for back-grinding needs to be peeled off from the cut electronic component, and therefore it is considered that adhesive residue is likely to occur at the edge portion of the cut electronic component.
The present inventors have made extensive studies to achieve the above object. As a result, it has been found for the first time that, in the adhesive film 50 including the base layer 10 and the ultraviolet-curable adhesive resin layer 20, by using the adhesive resin layer 20 in which the elongation at break of the ultraviolet-cured adhesive resin layer 20 is in the above range, it is possible to suppress adhesive residue on the electronic component 30 side when the adhesive film 50 is peeled from the electronic component 30 after the back-grinding step.
In the adhesive film 50 according to the present embodiment, the elongation at break of the adhesive resin layer 20 after the ultraviolet curing is 20% to 200%, but from the viewpoint of designing the adhesive resin layer 20 that is less likely to cause adhesive residue by maintaining appropriate toughness in the adhesive resin layer 20, it is preferably 30% to 40%, and preferably 150%, more preferably 100%, and even more preferably 80%.
The elongation at break of the adhesive resin layer 20 after ultraviolet curing can be controlled within the above range by controlling the kinds and the blending ratios of the adhesive resin, the crosslinking agent, and the photoinitiator constituting the adhesive resin layer 20, and the kinds and the content ratios of the respective monomers in the adhesive resin, for example.
From the viewpoint of the balance between mechanical properties and handling properties, the thickness of the entire adhesive film 50 according to the present embodiment is preferably 50 μm to 600 μm, more preferably 50 μm to 400 μm, and still more preferably 50 μm to 300 μm.
The adhesive film 50 according to the present embodiment may be provided with other layers such as an uneven absorbent resin layer, an adhesive layer, and an antistatic layer (not shown) between the layers within a range not to impair the effects of the present invention. The uneven absorbency of the adhesive film 50 can be improved by the uneven absorbency resin layer. The adhesive layer can improve the adhesiveness between the layers. In addition, the antistatic layer can improve the antistatic property of the adhesive film 50.
The adhesive film 50 according to the present embodiment is used for protecting the surface of the electronic component 30 in the manufacturing process of the electronic device, and more specifically, is used as a back grinding tape for protecting the circuit forming surface 30A (that is, a circuit surface including a circuit pattern) of the electronic component 30 in the step of grinding the electronic component 30 (also referred to as a back grinding step) which is one of the manufacturing processes of the electronic device. Specifically, the adhesive film 50 is bonded to and protected by the circuit forming surface 30A of the electronic component 30, and the surface opposite to the circuit forming surface 30A is ground. In particular, in the manufacturing process of an electronic device using the cut-first method, the stealth-first method, or the like, when the adhesive film 50 is peeled off from the electronic component 30 after the back grinding step, adhesive residue tends to occur on the electronic component 30 side, and therefore, the adhesive film 50 according to the present embodiment can be suitably used in the manufacturing process of an electronic device using the cut-first method, the stealth-first method, or the like.
Here, in the first dicing method, the electronic component 30 is half-diced as shown in fig. 1. In the stealth-first method, a modified layer (a region in which the inside of the electronic component 30 is internally processed by laser light) is formed on the electronic component 30 by laser light irradiation.
Next, each layer constituting the adhesive film 50 according to the present embodiment will be described.
< substrate layer >
The base layer 10 is provided for the purpose of improving the properties of the adhesive film 50 such as handling properties, mechanical properties, and heat resistance.
The base material layer 10 is not particularly limited as long as it has mechanical strength capable of withstanding an external force applied when the electronic component 30 is processed, and examples thereof include a resin film.
Examples of the resin constituting the base layer 10 include polyolefins selected from polyethylene, polypropylene, poly (4-methyl-1-pentene), poly (1-butene), and the like; polyesters such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate; polyamides such as nylon-6, nylon-66 and poly (m-xylylene adipamide); (meth) acrylic resins; polyvinyl chloride; polyvinylidene 1,1-dichloroethylene; a polyimide; a polyetherimide; ethylene-vinyl acetate copolymers; polyacrylonitrile; a polycarbonate; polystyrene; an ionomer; polysulfones; polyether sulfone; polyether ether ketone, etc.
Among these, from the viewpoint of improving mechanical properties and transparency, one or more selected from the group consisting of polypropylene, polyethylene terephthalate, polyethylene naphthalate, polyamide, polyimide, ethylene-vinyl acetate copolymer, and polybutylene terephthalate is preferable, and one or more selected from the group consisting of polyethylene terephthalate and polyethylene naphthalate is more preferable.
The base layer 10 may be a single layer or two or more layers.
The resin film used to form the base material layer 10 may be a stretched film or a film stretched in a uniaxial direction or a biaxial direction, but from the viewpoint of improving the mechanical strength of the base material layer 10, a film stretched in a uniaxial direction or a biaxial direction is preferable. The base material layer 10 is preferably a layer that has been annealed in advance, from the viewpoint of suppressing warpage of the electronic component after grinding. The base material layer 10 may be surface-treated in order to improve adhesion to other layers. Specifically, corona treatment, plasma treatment, under coat (under coat) treatment, primer coat (primer coat) treatment, and the like may be performed.
From the viewpoint of obtaining good film properties, the thickness of the base layer 10 is preferably 20 μm to 250 μm, more preferably 30 μm to 200 μm, and still more preferably 50 μm to 150 μm.
< adhesive resin layer >
The adhesive film 50 according to the present embodiment includes the ultraviolet-curable adhesive resin layer 20.
The adhesive resin layer 20 is a layer provided on one surface side of the base material layer 10, and is a layer that is adhered in contact with the circuit forming surface 30A of the electronic component 30 when the adhesive film 50 is adhered to the circuit forming surface 30A of the electronic component 30.
Examples of the adhesive constituting the adhesive resin layer 20 include (meth) acrylic adhesives, silicone adhesives, urethane adhesives, olefin adhesives, and styrene adhesives. Among these, (meth) acrylic adhesives containing a (meth) acrylic resin as a base polymer are preferred in terms of easy adjustment of the adhesive strength.
As the adhesive constituting the adhesive resin layer 20, an ultraviolet ray crosslinking type adhesive whose adhesive force is reduced by ultraviolet rays is preferably used.
Since the adhesive resin layer 20 made of the ultraviolet ray crosslinking type adhesive is crosslinked by irradiation of ultraviolet rays, the adhesive force is significantly reduced, and therefore the electronic component 30 is easily peeled from the adhesive film 50.
Examples of the (meth) acrylic resin contained in the (meth) acrylic adhesive include homopolymers of (meth) acrylate compounds, copolymers of (meth) acrylate compounds and comonomers, and the like. Examples of the (meth) acrylate compound include methyl (meth) acrylate, ethyl (meth) acrylate, butyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, hydroxyethyl (meth) acrylate, hydroxypropyl (meth) acrylate, dimethylaminoethyl (meth) acrylate, and glycidyl (meth) acrylate. These (meth) acrylate compounds may be used singly or in combination of two or more.
Examples of the comonomer constituting the (meth) acrylic copolymer include vinyl acetate, (meth) acrylonitrile, styrene, (meth) acrylic acid, itaconic acid, (meth) acrylamide, methylol (meth) acrylamide, and maleic anhydride. These comonomers may be used alone or in combination of two or more.
Examples of the ultraviolet-crosslinkable (meth) acrylic adhesive include the following adhesives: an adhesive comprising a (meth) acrylic resin having a polymerizable carbon-carbon double bond in the molecule and a photoinitiator, wherein the (meth) acrylic resin is crosslinked by a crosslinking agent as needed. The ultraviolet-crosslinkable (meth) acrylic adhesive may further contain a low-molecular-weight compound having 2 or more polymerizable carbon-carbon double bonds in the molecule.
The (meth) acrylic resin having a polymerizable carbon-carbon double bond in the molecule is obtained by the following specific procedure. First, a monomer having an ethylenic double bond and a copolymerizable monomer having a functional group (P) are copolymerized. Next, the functional group (P) contained in the copolymer and the monomer having the functional group (Q) capable of undergoing an addition reaction, a condensation reaction, or the like with the functional group (P) are reacted with each other in a state where the double bond in the monomer remains, thereby introducing a polymerizable carbon-carbon double bond into the copolymer molecule.
Examples of the monomer having an ethylenic double bond include 1 or 2 or more monomers having an ethylenic double bond such as methyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, butyl (meth) acrylate, alkyl acrylate monomers such as ethyl (meth) acrylate, alkyl methacrylate monomers, vinyl esters such as vinyl acetate, (meth) acrylonitrile, (meth) acrylamide, and styrene.
Examples of the copolymerizable monomer having the functional group (P) include (meth) acrylic acid, maleic acid, 2-hydroxyethyl (meth) acrylate, glycidyl (meth) acrylate, N-methylol (meth) acrylamide, and (meth) acryloyloxyethyl isocyanate. These may be used in 1 kind, or 2 or more kinds may be used in combination.
The ratio of the monomer having an ethylenic double bond to the copolymerizable monomer having the functional group (P) is preferably: the content of the monomer having an ethylenic double bond is 70 to 99% by mass, and the content of the copolymerizable monomer having a functional group (P) is 1 to 30% by mass. It is further preferred that: the content of the monomer having an ethylenic double bond is 80 to 95% by mass, and the content of the copolymerizable monomer having a functional group (P) is 5 to 20% by mass.
Examples of the monomer having the functional group (Q) include the same monomers as the copolymerizable monomer having the functional group (P).
As the combination of the functional group (P) and the functional group (Q) which react when a polymerizable carbon-carbon double bond is introduced into the copolymer of the monomer having an ethylenic double bond and the copolymerizable monomer having the functional group (P), a combination in which an addition reaction is easily caused between a carboxyl group and an epoxy group, between a carboxyl group and an aziridine group, between a hydroxyl group and an isocyanate group, or the like is desirable. In addition, any reaction may be used as long as it is a reaction capable of easily introducing a polymerizable carbon-carbon double bond, such as a condensation reaction of a carboxylic acid group and a hydroxyl group, without being limited to the addition reaction.
Examples of the low molecular weight compound having 2 or more polymerizable carbon-carbon double bonds in the molecule include tripropylene glycol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, tetramethylolmethane tetraacrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, and bis (trimethylolpropane) tetraacrylate. These may be used in 1 or 2 or more. The amount of the low-molecular weight compound having 2 or more polymerizable carbon-carbon double bonds in the molecule is preferably 0.1 to 20 parts by mass, and more preferably 5 to 18 parts by mass, based on 100 parts by mass of the (meth) acrylic resin.
Examples of the photoinitiator include benzoin, isopropylbenzoin ether, isobutylbenzoin ether, benzophenone, michler's ketone, chlorothioxanthone, dodecylthioxanthone, dimethylthioxanthone, diethylthioxanthone, acetophenone diethylketal, benzil dimethylketal, 1-hydroxycyclohexylphenylketone, 2-hydroxy-2-methyl-1-phenylpropan-1-one, 2-benzyl-2-dimethylamino-4' -morpholinobutanone, 2,2-dimethoxy-2-phenylacetophenone, 2-dimethylamino-2- (4-methylbenzyl) -1- (4-morpholin-4-yl-phenyl) butan-1-one, and the like. These may be used in 1 or 2 or more. The amount of the photoinitiator added is preferably 0.1 to 15 parts by mass, more preferably 1 to 10 parts by mass, and still more preferably 4 to 10 parts by mass, based on 100 parts by mass of the (meth) acrylic resin.
A crosslinking agent may be added to the ultraviolet curable adhesive. Examples of the crosslinking agent include epoxy compounds such as sorbitol polyglycidyl ether, polyglycerol polyglycidyl ether, pentaerythritol polyglycidyl ether, and diglycerol polyglycidyl ether, aziridine compounds such as tetramethylolmethane-tri- β -aziridinylpropionate, trimethylolpropane-tri- β -aziridinylpropionate, N ' -diphenylmethane-4,4 ' -bis (1-aziridinecarboxamide), N ' -hexamethylene-1,6-bis (1-aziridinecarboxamide), and ester isocyanate compounds such as tetramethylene diisocyanate, hexamethylene diisocyanate, and polyisocyanate. The ultraviolet curable adhesive may be any of a solvent type, an emulsion type, a hot melt type, and the like.
The content of the crosslinking agent is generally preferably within a range in which the number of functional groups in the crosslinking agent is not more than the number of functional groups in the (meth) acrylic resin. However, if necessary, the functional group may be excessively contained in the case where a new functional group is generated by the crosslinking reaction, the case where the crosslinking reaction is slow, or the like.
The content of the crosslinking agent in the (meth) acrylic adhesive is preferably 0.1 to 15 parts by mass, more preferably 0.5 to 5 parts by mass, with respect to 100 parts by mass of the (meth) acrylic resin, from the viewpoint of improving the balance between the heat resistance and the adhesion of the adhesive resin layer 20.
The adhesive resin layer 20 can be formed by, for example, applying an adhesive coating liquid on the base layer 10.
As a method for applying the adhesive coating liquid, for example, a conventionally known coating method such as a roll coater method, a reverse roll coater method, a gravure roll method, a bar coater method, a comma coater method, or a die coater method can be used. The drying conditions of the adhesive to be coated are not particularly limited, but generally, it is preferable to dry the adhesive at a temperature ranging from 80 to 200 ℃ for 10 seconds to 10 minutes. Further preferably, the drying is carried out at 80 to 170 ℃ for 15 seconds to 5 minutes. In order to sufficiently promote the crosslinking reaction between the crosslinking agent and the (meth) acrylic resin, the coating solution may be heated at 40 to 80 ℃ for about 5 to 300 hours after the completion of drying.
In the adhesive film 50 according to the present embodiment, the thickness of the adhesive resin layer 20 is preferably 10 μm to 100 μm, and more preferably 10 μm to 50 μm. If the thickness of the adhesive resin layer 20 is within the above range, the balance between the adhesiveness to the surface of the electronic component 30 and the handling property is good.
2. Method for manufacturing electronic device
Fig. 2 is a sectional view schematically showing an example of a method for manufacturing an electronic device according to an embodiment of the present invention.
The method of manufacturing an electronic device according to the present embodiment includes, for example, at least the following 3 steps.
(A) Preparing a structure 100 having an electronic component 30 having a circuit forming surface 30A and an adhesive film 50 bonded to the electronic component 30 on the circuit forming surface 30A side,
(B) A step of back-grinding a surface of the electronic component 30 opposite to the circuit forming surface 30A side, and
(C) After the adhesive film 50 is irradiated with ultraviolet rays, the adhesive film 50 is removed from the electronic component 30.
As the adhesive film 50, the adhesive film 50 according to the present embodiment is used. The method for manufacturing an electronic device according to the present embodiment is characterized in that the adhesive film 50 according to the present embodiment is used as a so-called back grinding tape when grinding the back surface of the electronic component 30.
Hereinafter, each step of the method for manufacturing an electronic device according to the present embodiment will be described.
(Process (A))
First, a structure 100 is prepared, the structure 100 including: an electronic component 30 having a circuit-formed surface 30A, and an adhesive film 50 bonded to the electronic component 30 on the circuit-formed surface 30A side.
Such a structure 100 can be produced, for example, as follows: the release film is peeled from the adhesive resin layer 20 of the adhesive film 50 to expose the surface of the adhesive resin layer 20, and the circuit forming surface 30A of the electronic component 30 is bonded to the adhesive resin layer 20.
Here, the conditions when the circuit forming surface 30A of the electronic component 30 is attached to the adhesive film 50 are not particularly limited, and may be, for example: the temperature is 20-80 ℃, the pressure is 0.05-0.5 MPa, and the pasting speed is 0.5-20 mm/s.
The step (a) preferably further includes a step (A1) and a step (A2), the step (A1) being at least one selected from the step (A1-1) of half-cutting the electronic component 30 and the step (A1-2) of irradiating the electronic component 30 with a laser beam to form a modified layer on the electronic component 30, and the step (A2) being to attach the adhesive film 50 for back grinding to the circuit forming surface 30A side of the electronic component 30 after the step (A1).
As described above, the adhesive film 50 according to the present embodiment can be suitably used in the manufacturing process of an electronic device using the pre-dicing method, the pre-stealth method, or the like. Therefore, the production method is preferably a method in which the step (A1-1) is performed as a pre-cut method and the step (A1-2) is performed as a pre-stealth method.
In the step (A2), the adhesive film 50 can be heated and bonded to the circuit forming surface 30A of the electronic component 30. This makes it possible to improve the adhesion state between the adhesive resin layer 20 and the electronic component 30 for a long period of time. The heating temperature is not particularly limited, and is, for example, 60 to 80 ℃.
The operation of attaching the adhesive film 50 to the electronic component may be performed manually, but generally, it can be performed by a device called an automatic attaching machine to which a roll-shaped adhesive film is attached.
The electronic component 30 attached to the adhesive film 50 is not particularly limited, and is preferably an electronic component 30 having a circuit-formed surface 30A. Examples thereof include a semiconductor wafer, an epoxy molded wafer, a molded panel, a molded array package, a semiconductor substrate, etc., and the semiconductor wafer and the epoxy molded wafer are preferable.
Examples of the semiconductor wafer include a silicon wafer, a sapphire wafer, a germanium-arsenic wafer, a gallium-phosphorus wafer, a gallium-arsenic-aluminum wafer, a gallium-arsenic wafer, and a lithium tantalate wafer, and the semiconductor wafer is suitably used for a silicon wafer. As the epoxy molded wafer, there can be mentioned: a Wafer manufactured by an eWLB (Embedded Wafer Level Ball Grid Array) process which is one of methods for manufacturing a fan-out (fan out) WLP.
The semiconductor wafer and the epoxy molded wafer having a circuit formation surface are not particularly limited, and are used, for example, for a wafer having a circuit such as a wiring, a capacitor, a diode, or a transistor formed on the surface thereof. Further, plasma treatment may be performed on the circuit forming surface.
The circuit formation surface 30A of the electronic component 30 may be formed into a concave-convex surface by having bump electrodes or the like, for example.
In addition, the bump electrode is, for example: when an electronic device is mounted on a mounting surface, bump electrodes are bonded to electrodes formed on the mounting surface to form electrical connection between the electronic device and the mounting surface (mounting surface of a printed circuit board or the like).
Examples of the bump electrode include a ball bump, a printed bump, a stud bump, a plated bump, and a stud bump. That is, the bump electrode is typically a convex electrode. These bump electrodes may be used alone in 1 kind, or may be used in combination in 2 or more kinds.
The height and diameter of the bump electrode are not particularly limited, but are preferably 10 to 400 μm, and more preferably 50 to 300 μm, respectively. The bump pitch is also not particularly limited, and is preferably 20 to 600 μm, and more preferably 100 to 500 μm.
The type of metal constituting the bump electrode is not particularly limited, and examples thereof include solder, silver, gold, copper, tin, lead, bismuth, and alloys thereof, and the adhesive film 50 is suitably used when the bump electrode is a solder bump. These metal species may be used alone in 1 kind, or may be used in combination in 2 or more kinds.
(Process (B))
Next, a surface (also referred to as a back surface) of the electronic component 30 opposite to the circuit forming surface 30A is subjected to back grinding.
Here, the back grinding means thinning the electronic component to a predetermined thickness without damaging the electronic component.
For example, the structure 100 is fixed to a chuck table (table) of a grinding machine, and the back surface (circuit non-formation surface) of the electronic component is ground.
In such a back grinding operation, the electronic component 30 is ground to a thickness equal to or less than a desired thickness. The thickness of the electronic component before grinding is appropriately determined according to the diameter, the kind, and the like of the electronic component 30, and the thickness of the electronic component 30 after grinding is appropriately determined according to the size of the obtained chip, the kind of the circuit, and the like.
When the electronic component 30 is half-cut or a modified layer is formed by laser irradiation, the electronic component 30 is singulated by the step (B) as shown in fig. 1.
The back grinding method is not particularly limited, and a known grinding method can be used. Each grinding can be performed while applying water to the electronic component and the grinding stone to cool them. If necessary, a dry polishing (dry polishing) step can be performed as a grinding method without using grinding water at the end of the grinding step. After the back grinding is finished, chemical etching is performed as necessary. The chemical etching is performed by the following method: and a method of immersing the electronic component in an etching solution selected from the group consisting of an acidic aqueous solution containing hydrofluoric acid, nitric acid, sulfuric acid, acetic acid, or the like, alone or in a mixed solution, and an alkaline aqueous solution containing potassium hydroxide aqueous solution, sodium hydroxide aqueous solution, or the like, in a state where the adhesive film 50 is adhered thereto. This etching is performed for the following purposes: the removal of strain generated on the back surface of the electronic component, the further thinning of the electronic component, the removal of an oxide film and the like, and the pretreatment when forming an electrode on the back surface. The etching solution is appropriately selected according to the purpose.
(Process (C))
Next, after the adhesive film 50 is irradiated with ultraviolet rays, the adhesive film 50 is removed from the electronic component 30. The electronic component 30 may be mounted on a dicing tape or a dicing tape with a die bonding film before removing the adhesive film from the electronic component 30. The operation of removing the adhesive film 50 from the electronic component 30 is sometimes performed manually, but can be generally performed by a device called an automatic peeling machine.
The surface of the electronic component 30 after the adhesive film 50 is peeled off may be washed as necessary. Examples of the washing method include wet washing such as water washing and solvent washing, and dry washing such as plasma washing. In the case of wet scrubbing, it is possible to use ultrasonic scrubbing. These cleaning methods can be appropriately selected according to the contamination condition of the surface of the electronic component.
In the step (C), the adhesive film 50 is irradiated with, for example, 200mJ/cm 2 Above 2000mJ/cm 2 The following dose of ultraviolet rays to photocure the adhesive resin layer 20 to reduce the adhesive force of the adhesive resin layer 20, and then the adhesive film 50 is removed from the electronic component 30.
The ultraviolet irradiation can be performed using ultraviolet rays having a dominant wavelength of 365nm, for example, using a high-pressure mercury lamp.
The intensity of ultraviolet ray irradiation is, for example, 50mW/cm 2 Above 500mW/cm 2 The following.
(other steps)
After the steps (a) to (C), a step of mounting the obtained semiconductor chip on a circuit board may be further performed. These steps can be performed based on known information.
Although the preferred embodiments of the present invention have been described above, these embodiments are merely illustrative of the present invention, and various configurations other than the above-described configurations can be adopted.
Examples
The present invention will be specifically described below with reference to examples and comparative examples, but the present invention is not limited thereto.
Details of the production of the adhesive film are as follows.
< substrate layer >
Substrate layer 1: polyethylene terephthalate film (Toyo Boseki Co., ltd., product name: E7180, thickness: 50 μm, single-side corona-treated product)
Substrate layer 2: laminate film comprising low-density polyethylene film/polyethylene terephthalate film/low-density polyethylene film (total thickness: 110 μm)
A low-density polyethylene film (density: 0.925 kg/m) was laminated on both sides of a polyethylene terephthalate film (manufactured by Toray corporation, product name: lumiror S10, thickness: 50 μm) 3 Thickness: 30 μm). One side of the obtained laminated film was subjected to corona treatment.
Substrate layer 3: laminate film comprising polyethylene terephthalate film/ethylene-vinyl acetate copolymer film/acrylic acid film (total thickness: 145 μm)
A polyethylene terephthalate film (manufactured by Toyo Boseki Kabushiki Kaisha, trade name: E7180, thickness: 50 μm) and an ethylene-vinyl acetate copolymer (manufactured by Mitsui-Dow polymerization chemical Co., ltd., MFR:2.5g/10 min) film (thickness: 70 μm) were laminated by subjecting the side of the ethylene-vinyl acetate copolymer film to corona treatment, which was in contact with the polyethylene terephthalate film. Further, the side of the ethylene-vinyl acetate copolymer film opposite to the polyethylene terephthalate film was also subjected to corona discharge treatment.
Next, an acrylic resin coating liquid for a substrate shown below was applied to the release surface of the polyethylene terephthalate film (separator) after the release treatment so that the dry thickness became 20 μm, dried, and adhered to the above-mentioned laminated film comprising a polyethylene terephthalate film/an ethylene-vinyl acetate copolymer film via an ethylene-vinyl acetate copolymer film, and then cured (40 ℃,3 days). Subsequently, the separator was peeled off to obtain a base material layer 3.
< acrylic resin coating liquid for substrate >
As the polymerization initiator, 4,4' -azobis-4-cyanovaleric acid (available from Otsuka chemical Co., ltd.; product name: ACVA) was used in 0.5 part by mass, and an aqueous solution of 74 parts by mass of butyl acrylate, 14 parts by mass of methyl methacrylate, 9 parts by mass of 2-hydroxyethyl methacrylate, 2 parts by mass of methacrylic acid, 1 part by mass of acrylamide, and ammonium polyoxyethylene nonylphenyl ether sulfate (available from first Industrial pharmaceutical Co., ltd.; product name: aqua HS-1025) was emulsion-polymerized in deionized water at 70 ℃ for 9 hours. After completion of the polymerization, the pH was adjusted to pH =7 with aqueous ammonia, and an acrylic polymer aqueous emulsion having a solid content of 42.5% was obtained. Then, 100 parts by mass of the acrylic polymer aqueous emulsion was adjusted to pH =9 or more using ammonia water, and 0.75 part by mass of an aziridine-based crosslinking agent (chemite PZ-33, manufactured by Nippon catalytic chemical industries) and 5 parts by mass of diethylene glycol monobutyl ether were added to obtain a coating liquid for a substrate.
(meth) acrylic resin solution
(meth) acrylic resin solution 1:
49 parts by mass of ethyl acrylate, 20 parts by mass of 2-ethylhexyl acrylate, 21 parts by mass of methyl acrylate, 10 parts by mass of glycidyl methacrylate, and 0.5 part by mass of a benzoyl peroxide polymerization initiator as a polymerization initiator were reacted at 80 ℃ for 10 hours in 65 parts by mass of toluene and 50 parts by mass of ethyl acetate. After the reaction was completed, the obtained solution was cooled, 25 parts by mass of xylene, 5 parts by mass of acrylic acid and 0.5 part by mass of tetradecyldimethylbenzylammonium chloride were added to the cooled solution, and the mixture was reacted at 85 ℃ for 32 hours while blowing air, thereby obtaining a (meth) acrylic resin solution 1.
(meth) acrylic resin solution 2:
77 parts by mass of n-butyl acrylate, 16 parts by mass of methyl methacrylate, 16 parts by mass of 2-hydroxyethyl acrylate and 0.3 part by mass of t-butylperoxy-2-ethylhexanoate as a polymerization initiator were reacted at 85 ℃ for 10 hours in 20 parts by mass of toluene and 80 parts by mass of ethyl acetate. After the reaction, the solution was cooled, and 30 parts by mass of toluene, 7 parts by mass of methacryloyloxyethyl isocyanate (product name: karenz MOI, manufactured by Showa Denko K.K.) and 0.05 part by mass of dibutyltin dilaurate were added thereto, followed by reaction at 85 ℃ for 12 hours while blowing air, to obtain (meth) acrylic resin solution 2.
(meth) acrylic resin solution 3:
30 parts by mass of ethyl acrylate, 11 parts by mass of methyl acrylate, 26 parts by mass of 2-ethylhexyl acrylate, 7 parts by mass of 2-hydroxyethyl methacrylate, and 0.8 part by mass of a benzoyl peroxide polymerization initiator as a polymerization initiator were reacted at 80 ℃ for 9 hours in 7 parts by mass of toluene and 50 parts by mass of ethyl acetate. After the reaction was completed, the obtained solution was cooled, and 25 parts by mass of toluene was added to the cooled solution to obtain a (meth) acrylic resin solution 3.
< adhesive film for evaluation of elongation at Break >
The additives shown in table 1 were added to the acrylic resin solution to prepare a pressure-sensitive adhesive coating liquid for a pressure-sensitive adhesive resin layer. This coating liquid was applied to the release-treated surface of a polyethylene terephthalate film (separator) after silicone release treatment, and dried at 120 ℃ for 3 minutes to form an adhesive resin layer having a thickness of 20 μm. Subsequently, the corona-treated surface of the corona-treated ethylene-vinyl acetate copolymer extruded film (MFR: 1.7g/10min, vinyl acetate content: 9 mass%, thickness: 140 μm) was bonded to the adhesive resin layer to obtain a laminate. Subsequently, the obtained laminate was heated at 40 ℃ for 3 days in an oven to be cured.
< adhesive force and adhesive film for evaluation of Pre-cut >
Additives shown in table 1 were added to the acrylic resin solution to prepare a pressure-sensitive adhesive coating liquid for a pressure-sensitive adhesive resin layer. This coating liquid was applied to a polyethylene terephthalate film (separator) subjected to a silicone release treatment. Subsequently, the resulting film was dried at 120 ℃ for 3 minutes to form an adhesive resin layer having a thickness of 20 μm, and the adhesive resin layer was bonded to a base material layer. The substrate layers 1 and 2 were bonded to the corona-treated surfaces. The base material layer 3 was peeled off from the separator and attached to the acrylic layer side. The obtained laminate was heated at 40 ℃ for 3 days in an oven to cure the laminate.
< evaluation method >
(1) Elongation at break of ultraviolet-cured adhesive resin layer
From the ethylene-vinyl acetate copolymer extruded film side of the adhesive film for evaluation of elongation at break, a high pressure mercury lamp was used at 25 ℃ for the adhesive resin layer to irradiate an intensity of 100mW/cm 2 Irradiation amount of ultraviolet ray is 1080mJ/cm 2 And a dominant wavelength of 365 nm. Subsequently, the laminate was cut into a length of 110mm and a width of 10mm, and the polyethylene terephthalate film as a separator was peeled off from the laminate.
Subsequently, the pressure-sensitive adhesive resin layer and the ethylene-vinyl acetate copolymer extruded film were sandwiched by a tensile tester (Shimadzu corporation, product name: autograph AGS-X) so that the initial distance Lo between chucks was 50 mm. The sample was stretched at a rate of 30 mm/min, and the point at which the adhesive resin layer was visually observed to break was defined as the breaking point, and the distance between chucks at this time was defined as L. The elongation at break (%) is determined as (L-Lo)/Lo × 100 (%). The evaluation was performed with N =2, and the values were averaged to obtain a measurement value.
(2) Evaluation of adhesive force
Adherend wafer:
the mirror surface of a silicon mirror wafer (4-inch single-sided mirror wafer, manufactured by SUMCO) was subjected to ozone cleaning (ozone treatment time: 60 seconds) by a UV ozone cleaning apparatus (UV-208, manufactured by technoviion). Then, the wafer mirror surface wiped with ethanol was set as an adherend wafer.
Adhesion before ultraviolet irradiation:
the adhesive film for evaluation of adhesive force was cut into a width of 50mm in an environment of 23 ℃ and 50% rh, the separator was peeled off, the adhesive film was adhered to the mirror surface of the adherend wafer via the adhesive resin layer using a hand roller, and left standing for 1 hour. After the placement, one end of the adhesive film was held between a pair of sheets using a tensile tester (Shimadzu corporation, product name: autograph AGS-X) at a peel angle: 180 degrees, peeling speed: the adhesive film was peeled from the surface of the adherend wafer at 300 mm/min. The stress at this time was measured and converted into N/25mm to determine the adhesive force. The evaluation was performed with N =2, and the values were averaged to obtain a measurement value.
Adhesion after ultraviolet irradiation: the adhesive film for evaluation of adhesive force was cut into a 50mm width at 23 ℃ in an atmosphere of 50% RH, the separator was peeled off, the adhesive film was adhered to the mirror surface of the adherend wafer via the adhesive resin layer using a hand roller, and the resultant was left to stand for 1 hour. After standing, the obtained mixture was irradiated at an irradiation intensity of 100mW/cm using a high pressure mercury lamp at 25 deg.C 2 Irradiating the adhesive film with ultraviolet rays at a dose of 1080mJ/cm 2 And a dominant wavelength of 365 nm. Then, one end of the adhesive film was held between the two films by a tensile tester (Shimadzu corporation, product name: autograph AGS-X) at a peel angle: 180 degrees, peeling speed: the adhesive film was peeled from the surface of the adherend wafer at 300 mm/min. The stress at this time was measured and converted into N/25mm to determine the adhesive force. The evaluation was performed with N =2, and the values were averaged to obtain a measured value.
And (3) residual gum evaluation:
the adherend wafer after the peeling was visually observed and evaluated according to the following criteria.
Good: no residual gum was confirmed
X: the condition of residual glue was confirmed
(3) Evaluation by preliminary cutting method
Evaluation of wafer 1:
a mirror surface of a mirror wafer (8-inch mirror wafer, diameter: 200. + -. 0.5mm, thickness: 725. + -. 50 μm, single-sided mirror surface) was half-cut using a dicing saw to obtain an evaluation wafer 1. (blade: ZH05-SD3500-N1-70-DD, chip size: 5mm. Times.8 mm, incision depth: 58 μm, blade rotation speed: 30000 rpm). The evaluation wafer 1 was observed with an optical microscope, and the scratch width was 35 μm.
Evaluation of wafer 2:
the half-cut at stage 1 (blade: Z09-SD2000-Y1 58X 0.25A X40X 45E-L, chip size: 5mm X8 mm, notch depth: 15 μm, blade rotation speed: 30000 rpm) was performed on a mirror surface of a mirror wafer (8-inch mirror wafer, diameter: 200. + -. 0.5mm, thickness: 725. + -.50 μm, single-sided mirror surface, manufactured by kst world Co., ltd.) using a dicing saw. The scratch width was 60 μm as a result of observation with an optical microscope. Next, half dicing at stage 2 was performed (blade: ZH05-SD3500-N1-70-DD, chip size: 5mm. Times.8 mm, notch depth: 58 μm, blade rotation speed: 30000 rpm), and evaluation wafer 2 was obtained.
Cutting method:
an adhesive film for pre-dicing evaluation was bonded to the half-diced surface of the evaluation wafer using a tape bonder (DR 3000II, manufactured by Nindon electric Co., ltd.) (bonding speed: 5 mm/min, bonding pressure: 0.36MPa, 23 ℃).
Next, the wafer was subjected to back grinding (rough grinding and finish grinding, finish grinding amount: 40 μm, no polishing, thickness after grinding: 38 μm) using a grinder (grind) (DGP 8760, manufactured by DISCO Co.), and was singulated.
The chip scattering during the first dicing was evaluated by visual observation after the back grinding was performed according to the following criteria.
Good: no chip scattering was observed including the triangular corner portion
X: the chips were confirmed to be scattered including the triangular corner portions
Further, UV irradiation and peeling of the adhesive film for evaluation of pre-dicing were performed, and the adhesive residue after the pre-dicing method was evaluated.
UV irradiation is performed at 25 deg.C using a high pressure mercury lamp with irradiation intensity of 100mW/cm 2 The pressure-sensitive adhesive film for evaluation of preliminary cutting was irradiated with ultraviolet rays at a dose of 1080mJ/cm 2 Dominant wavelength of 365 nm.
The peeling of the adhesive film for evaluation by cutting was performed in the following manner. First, a separately prepared dicing tape (used as a mounting tape) was attached to the wafer side of the singulated wafer and the 8-inch wafer ring frame via the adhesive surface of the dicing tape by using a wafer mounter (MSA 300, manufactured by ritong electric corporation). Next, the adhesive film for the dicing evaluation was peeled from the wafer notch portion with a tape peeling machine (HR 3000III, manufactured by riton electrical company) by using a peeling tape (PET 38REL, manufactured by molding system). The device releasability was evaluated according to the following criteria.
Good: the first dicing evaluation adhesive film can be peeled from the wafer 1 st time
X: the case where the adhesive film for pre-dicing evaluation could not be peeled from the wafer in the 1 st pass
The residual glue on the singulated wafer after the dicing method was evaluated by using an optical microscope (manufactured by olympus) according to the following criteria.
Good component: no residual gum was confirmed
X: the condition of residual gum was confirmed
[ example 1]
6.9 parts by mass of benzildimethylketal (trade name: omnirad 651, manufactured by IGM Co., ltd.) and 0.93 part by mass of an isocyanate-based crosslinking agent (trade name: olester P49-75S, manufactured by Mitsui chemical Co., ltd.) were added to 100 parts by mass of (meth) acrylic resin solution 1 (solid content) to obtain adhesive coating liquid 1 for an adhesive resin layer. By the above-described method, an adhesive film for elongation at break evaluation, an adhesive film for adhesive force evaluation, and an adhesive film for preliminary cut evaluation were produced. Further, based on the previously described evaluation methods, the elongation at break, the adhesive force evaluation and the pre-cut method evaluation of the adhesive material after ultraviolet curing were performed. The results are shown in table 1.
Examples 2 to 10 and comparative examples 1 and 2
Adhesive films were produced in the same manner as in example 1, except that the types of the adhesive resin layer and the base material layer were changed to those shown in table 1. Each evaluation was performed in the same manner as in example 1. The results are shown in Table 1.
The compounds shown in table 1 are as follows.
omnirad 651 (IGM corporation): 2,2-dimethoxy-2-phenylacetophenone
omnirad 369 (IGM corporation): 2-benzyl-2-dimethylamino-4' -morpholino-phenylbutanone
aronix M400 (manufactured by east asian synthesis corporation): mixtures of dipentaerythritol pentaacrylate and dipentaerythritol hexaacrylate
NK ester AD-TMP (manufactured by Newzhongcun chemical industries Co., ltd.): ditrimethylolpropane tetraacrylate
[ Table 1]
Figure BDA0003899528560000211
The present application claims priority based on Japanese application No. 2020-076702 filed on 23/4/2020, the entire disclosure of which is incorporated herein by reference.
Description of the symbols
10. Substrate layer
20. Adhesive resin layer
30. Electronic component
30A circuit forming face
50. Adhesive film
100. A structure.

Claims (7)

1. An adhesive film for back grinding, which comprises a base material layer and an ultraviolet-curable adhesive resin layer provided on one surface side of the base material layer and is used for protecting the surface of an electronic component,
the breaking elongation of the adhesive resin layer after ultraviolet curing is 20% to 200%.
2. The adhesive film for back grinding according to claim 1,
the adhesive resin layer contains a (meth) acrylic resin having a polymerizable carbon-carbon double bond in the molecule and a photoinitiator.
3. The adhesive film for back grinding according to claim 1 or 2,
the electronic component is half-cut or formed with a modified layer.
4. The adhesive film for back grinding according to any one of claims 1 to 3,
the thickness of the adhesive resin layer is 10 [ mu ] m or more and 100 [ mu ] m or less.
5. The adhesive film for back grinding according to any one of claims 1 to 4,
the resin constituting the base material layer contains one or more selected from the group consisting of polyolefin, polyester, polyamide, polyacrylate, polymethacrylate, polyvinyl chloride, polyvinylidene 1,1-dichloroethylene, polyimide, polyetherimide, ethylene-vinyl acetate copolymer, polyacrylonitrile, polycarbonate, polystyrene, ionomer, polysulfone, polyethersulfone and polyphenylene oxide.
6. A method for manufacturing an electronic device, comprising at least the steps of:
a step (A) of preparing a structure having an electronic component having a circuit-formed surface and an adhesive film bonded to the circuit-formed surface side of the electronic component,
a step (B) of back-grinding a surface of the electronic component opposite to the circuit forming surface side, and
a step (C) of irradiating the adhesive film with ultraviolet rays and then removing the adhesive film from the electronic component,
the adhesive film for back grinding according to any one of claims 1 to 5.
7. The method for manufacturing an electronic device according to claim 6, wherein the step (A) includes the steps of:
a step (A1) of selecting at least one of the step (A1-1) of half-cutting the electronic component and the step (A1-2) of irradiating the electronic component with a laser beam to form a modified layer on the electronic component, and
and (A2) bonding the adhesive film for back grinding to the circuit forming surface side of the electronic component after the step (A1).
CN202180029810.8A 2020-04-23 2021-04-07 Adhesive film for back grinding and method for manufacturing electronic device Pending CN115443524A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020-076702 2020-04-23
JP2020076702 2020-04-23
PCT/JP2021/014713 WO2021215247A1 (en) 2020-04-23 2021-04-07 Back-grinding adhesive film, and electronic device manufacturing method

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CN115443524A true CN115443524A (en) 2022-12-06

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JP (1) JPWO2021215247A1 (en)
KR (1) KR20220163431A (en)
CN (1) CN115443524A (en)
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WO (1) WO2021215247A1 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5069662B2 (en) * 2007-11-12 2012-11-07 リンテック株式会社 Adhesive sheet
JP6059499B2 (en) 2012-10-05 2017-01-11 リンテック株式会社 Surface protection sheet
JP5823591B1 (en) 2014-10-01 2015-11-25 古河電気工業株式会社 Adhesive tape for protecting semiconductor wafer surface and method for processing semiconductor wafer
KR20180066043A (en) * 2015-10-05 2018-06-18 린텍 가부시키가이샤 Semiconductor processing sheet

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JPWO2021215247A1 (en) 2021-10-28
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KR20220163431A (en) 2022-12-09

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