KR20220163431A - Method for manufacturing adhesive film for backgrind and electronic device - Google Patents

Abstract

A back grind comprising a substrate layer 10 and an ultraviolet curable adhesive resin layer 20 provided on one side of the substrate layer 10 and used to protect the surface of the electronic component 30. It is the adhesive film 50 for back grinding, and the elongation at break of the adhesive resin layer 20 after ultraviolet curing is 20% or more and 200% or less.

Description

Method for manufacturing adhesive film for backgrind and electronic device

The present invention relates to a method for manufacturing an adhesive film for back grinding and an electronic device.

BACKGROUND OF THE INVENTION In an electronic device manufacturing process, in a step of grinding an electronic component, an adhesive film is applied to the circuit forming surface of the electronic component in order to fix the electronic component or prevent damage to the electronic component.

Generally, a film in which an adhesive resin layer is laminated on a base film is used for such an adhesive film.

With the advancement of high-density packaging technology, there is a demand for thinning of electronic parts such as semiconductor wafers, and thinning to a thickness of 50 μm or less, for example, is required.

As one of such thinning processes, there is a pre-dicing method in which a groove of a predetermined depth is formed on the surface of an electronic component before grinding of the electronic component, and then the electronic component is separated into pieces by grinding. In addition, there is a pre-stealth method in which a modified region is formed by irradiating a laser into the inside of an electronic component before grinding, and then the electronic component is separated into pieces by grinding.

As a technology related to the adhesive film for such a pre-dicing method or pre-stealth method, for example, Patent Document 1 (Japanese Patent Laid-Open No. 2014-75560) and Patent Document 2 (Japanese Unexamined Patent Publication No. 2016-72546) described can hear

Patent Literature 1 describes a surface protection sheet having an adhesive layer on a substrate and satisfying the following requirements (a) to (d).

(a) The Young's modulus of the substrate is 450 MPa or more

(b) The storage modulus at 25°C of the pressure-sensitive adhesive layer is 0.10 MPa or more.

(c) The storage modulus at 50°C of the pressure-sensitive adhesive layer is 0.20 MPa or less.

(d) the thickness of the pressure-sensitive adhesive layer is 30 μm or more

In Patent Literature 1, such a surface protection sheet suppresses intrusion of water (intrusion of sludge) into the surface to be protected of the workpiece from a gap formed by cutting the workpiece during a step of grinding the back side of the workpiece, and It is stated that contamination can be prevented.

Patent Literature 2 includes a base resin film and a radiation curable pressure-sensitive adhesive layer formed on at least one side of the base resin film, wherein the base resin film has at least one rigid layer having a tensile modulus of elasticity of 1 to 10 GPa, An adhesive tape for semiconductor wafer surface protection characterized in that the peeling force at a peeling angle of 30° after radiation curing the pressure-sensitive adhesive layer is 0.1 to 3.0 N/25 mm.

According to patent document 2, according to this adhesive tape for semiconductor wafer surface protection, in the process of grinding the backside of a semiconductor wafer to which the pre-dicing method or the pre-stealth method was applied, while suppressing the kerf shift of the semiconductor chip separated into pieces, a semiconductor wafer It is stated that it can be processed without damage or contamination.

Japanese Unexamined Patent Publication No. 2014-75560 Japanese Unexamined Patent Publication No. 2016-72546

According to the study of the present inventors, in the manufacturing process of electronic devices using, for example, the pre-dicing method or the pre-stealth method, when peeling the adhesive film from the electronic component after the back-grinding process, adhesive residue is left on the electronic component side It turns out that it is easy to occur.

This invention was made|formed in view of the said situation, WHEREIN: It provides the adhesive film for back grinding which can suppress the adhesive residue at the side of the electronic component at the time of peeling the adhesive film from an electronic component.

The present inventors repeated earnest examinations in order to achieve the above object. As a result, in the adhesive film comprising a base material layer and an ultraviolet curable adhesive resin layer, by using an adhesive resin layer having a breaking elongation after ultraviolet curing within a specific range, after the back-grind step, the adhesive film can be removed from the electronic component. It discovered that the adhesive residue on the side of the electronic component at the time of peeling could be suppressed, and this invention was completed.

ADVANTAGE OF THE INVENTION According to this invention, the manufacturing method of the adhesive film for back grinding and an electronic device shown below is provided.

[One]

An adhesive film for back grinding comprising a substrate layer and an ultraviolet curable adhesive resin layer provided on one side of the substrate layer and used to protect the surface of an electronic component,

The adhesive film for back grind whose breaking elongation of the said adhesive resin layer after ultraviolet curing is 20 % or more and 200 % or less.

[2]

In the adhesive film for back grinding according to the above [1],

The adhesive film for backgrinding, wherein the adhesive resin layer includes a (meth)acrylic resin having a polymerizable carbon-carbon double bond in a molecule and a photoinitiator.

[3]

In the adhesive film for back grinding according to the above [1] or [2],

The adhesive film for backgrinding in which the electronic component is half-cut or a modified layer is formed.

[4]

In the adhesive film for back grinding according to any one of the above [1] to [3],

The adhesive film for back grinding, wherein the thickness of the adhesive resin layer is 10 μm or more and 100 μm or less.

[5]

In the adhesive film for back grinding according to any one of [1] to [4] above,

The resin constituting the base layer is polyolefin, polyester, polyamide, polyacrylate, polymethacrylate, polyvinyl chloride, polyvinylidene chloride, polyimide, polyetherimide, ethylene-vinyl acetate copolymer, polyacrylic An adhesive film for back grinding comprising one or two or more selected from ronitrile, polycarbonate, polystyrene, ionomer, polysulfone, polyethersulfone, and polyphenylene ether.

[6]

Step (A) of preparing a structure comprising an electronic component having a circuit formation surface and an adhesive film bonded to the circuit formation surface side of the electronic component;

a step (B) of back-grinding a surface of the electronic component opposite to the circuit formation surface;

Step (C) of removing the adhesive film from the electronic component after irradiating the adhesive film with ultraviolet rays.

A method of manufacturing an electronic device comprising at least

The manufacturing method of the electronic device in which the said adhesive film is the adhesive film for backgrind described in any one of said [1]-[5].

[7]

In the manufacturing method of the electronic device described in [6] above,

In the step (A),

At least one kind of step (A1) selected from the step of half-cutting the electronic component (A1-1) and the step of irradiating the electronic component with a laser to form a modified layer on the electronic component (A1-2) class,

After the step (A1), a step (A2) of attaching the adhesive film for back grinding to the circuit formation surface side of the electronic component

A method of manufacturing an electronic device comprising:

ADVANTAGE OF THE INVENTION According to this invention, after a back-grind process WHEREIN: The adhesive film for back-grind which can suppress the adhesive residue on the side of an electronic component at the time of peeling an adhesive film from an electronic component can be provided.

1 is a cross-sectional view schematically showing an example of the structure of an adhesive film according to an embodiment of the present invention.
2 is a cross-sectional view schematically showing an example of a method for manufacturing an electronic device according to an embodiment of the present invention.

EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described using drawings. In addition, in all drawings, common reference numerals are attached to similar components, and explanations are omitted appropriately. In addition, the drawing is a schematic diagram and does not coincide with the actual size ratio. In addition, "A to B" in a numerical range represents A or more and B or less unless otherwise specified. In addition, in this embodiment, "(meth)acryl" means an acryl, methacryl, or both an acryl and methacryl.

1. Adhesive film

Fig. 1 is a cross-sectional view schematically showing an example of the structure of an adhesive film 50 according to an embodiment of the present invention.

As shown in FIG. 1 , the adhesive film 50 for backgrind according to the present embodiment includes a substrate layer 10 and an ultraviolet curable adhesive resin layer 20 provided on one side of the substrate layer 10. ) and is used to protect the surface of the electronic component 30, the adhesive film 50 for back grinding, the elongation at break of the adhesive resin layer 20 after ultraviolet curing is 20% or more and 200% or less. to be.

Here, the breaking elongation of the adhesive resin layer 20 after ultraviolet curing is a value measured by the following method.

(Way)

On the corona-treated surface of the corona-treated ethylene/vinyl acetate copolymer extruded film (MFR: 1.7 g/10 min, vinyl acetate content: 9 mass%, thickness: 140 µm), the adhesive film for backgrind (50 Measurement of the state in which a release film (separator) such as a polyethylene terephthalate film subjected to silicone release treatment is laminated on the adhesive resin layer 20 side having the same thickness, composition, etc. as the adhesive resin layer 20 of ). Produce samples for

As a lamination method, the following method is mentioned, for example.

An adhesive resin layer (20) is formed on the release-treated surface of a polyethylene terephthalate film subjected to silicone release treatment, and then a corona-treated ethylene-vinyl acetate copolymer film is bonded onto the adhesive resin layer (20) to obtain a laminate. . Next, the obtained layered product is heated and aged at 40°C for 3 days in an oven.

Next, from the ethylene-vinyl acetate copolymer film side of the obtained laminate, ultraviolet rays with a dominant wavelength of 365 nm were applied to the adhesive resin layer 20 in an environment of 25° C. using a high-pressure mercury lamp at an irradiation intensity of 100 mW/cm 2 and an amount of ultraviolet rays of 1080 mJ. / cm 2 to photocur the adhesive resin layer 20 . Next, the layered product in which the adhesive resin layer 20 is photocured is cut into a length of 110 mm and a width of 10 mm, and a polyethylene terephthalate film serving as a separator is peeled off from the layered product.

Then, together with the ethylene-vinyl acetate copolymer film, the adhesive resin layer 20 is chucked with a tensile tester (eg Autograph AGS-X, manufactured by Shimadzu Corporation) so that the initial chuck-to-chuck distance Lo is 50 mm. . The sample is pulled at a rate of 30 mm/min, and the point at which fracture is observed in the adhesive resin layer 20 visually is defined as the fracture point, and the chuck-to-chuck distance at that time is referred to as L. Elongation at break (%) is determined by (L-Lo)/Lo×100 (%).

As described above, according to the study of the present inventors, in the manufacturing process of an electronic device using, for example, a pre-dicing method or a pre-stealth method, when peeling the adhesive film from the electronic component after the back-grinding step, the electronic component side It has been found that adhesive residues tend to occur in

The reason for this is not clear, but unlike the normal back-grinding process of electronic parts, since it is necessary to peel off the adhesive film 50 for back-grinding from the cut electronic parts, the adhesive remains on the edge of the cut electronic parts It is thought that this becomes more likely to occur.

The present inventors repeated earnest examinations in order to achieve the above object. As a result, in the adhesive film 50 comprising the substrate layer 10 and the ultraviolet curable adhesive resin layer 20, the elongation at break of the adhesive resin layer 20 after ultraviolet curing is within the above range. By using (20), it was discovered for the first time that the adhesive residue on the side of the electronic component 30 at the time of peeling the adhesive film 50 from the electronic component 30 could be suppressed after the back-grind process.

In the adhesive film 50 according to the present embodiment, the elongation at break of the adhesive resin layer 20 after ultraviolet curing is 20% or more and 200% or less, but by giving the adhesive resin layer 20 appropriate toughness, the adhesive residue remains. From the viewpoint of designing the adhesive resin layer 20 where this is difficult to occur, the content is preferably 30% or more, more preferably 40% or more, and preferably 150% or less, more preferably 100% or less, still more preferably It is 80% or less.

The breaking elongation of the adhesive resin layer 20 after ultraviolet curing is, for example, the type and mixing ratio of the adhesive resin, crosslinking agent, and photoinitiator constituting the adhesive resin layer 20, and the type and content of each monomer in the adhesive resin. By controlling the ratio, it can be controlled within the above range.

The overall thickness of the adhesive film 50 according to the present embodiment is preferably 50 μm or more and 600 μm or less, more preferably 50 μm or more and 400 μm or less, still more preferably, from the balance of mechanical properties and handleability. It is 50 micrometers or more and 300 micrometers or less.

In the adhesive film 50 according to the present embodiment, other layers such as an uneven water-absorbent resin layer, an adhesive layer, and an antistatic layer (not shown) may be provided between each layer within a range that does not impair the effects of the present invention. According to the unevenness-absorbent resin layer, the unevenness absorbency of the adhesive film 50 can be improved. According to the adhesive layer, the adhesiveness between each layer can be improved. Moreover, according to the antistatic layer, the antistatic property of the adhesive film 50 can be improved.

The adhesive film 50 according to the present embodiment is used to protect the surface of the electronic component 30 in the manufacturing process of the electronic device, and more specifically, the electronic component 30, which is one of the manufacturing processes of the electronic device It is used as a back-grind tape used to protect the circuit forming surface 30A (that is, the circuit surface including the circuit pattern) of the electronic component 30 in a process of grinding (also referred to as a back-grind process). Specifically, the adhesive film 50 is applied to and protected on the circuit formation surface 30A of the electronic component 30, and is used in a step of grinding the surface on the opposite side to the circuit formation surface 30A. In particular, in the manufacturing process of an electronic device using a pre-dicing method or a pre-stealth method, when peeling the adhesive film 50 from the electronic component 30 after the back-grind process, adhesive residue on the electronic component 30 side Since this easily occurs, the adhesive film 50 according to the present embodiment can be suitably applied to a manufacturing process of an electronic device using a pre-dicing method, a pre-stealth method, or the like.

Here, in the pre-dicing method, the electronic component 30 is half-cut as shown in FIG. 1 . Further, in the line stealth method, the electronic component 30 has a modified layer formed by laser irradiation (a region processed inside the electronic component 30 by a laser).

Next, each layer constituting the adhesive film 50 according to the present embodiment will be described.

<base layer>

The substrate layer 10 is a layer provided for the purpose of further improving properties such as handleability, mechanical properties, and heat resistance of the adhesive film 50 .

The substrate layer 10 is not particularly limited as long as it has mechanical strength capable of withstanding an external force applied when processing the electronic component 30, but examples thereof include a resin film.

Examples of the resin constituting the substrate layer 10 include polyolefins such as polyethylene, polypropylene, poly(4-methyl-1-pentene), and poly(1-butene); polyesters such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate; polyamides such as nylon-6, nylon-66, and polymeta-xylene adipamide; (meth)acrylic resin; polyvinyl chloride; polyvinylidene chloride; polyimide; polyetherimide; Ethylene-vinyl acetate copolymer; polyacrylonitrile; polycarbonate; polystyrene; ionomer; polysulfone; polyethersulfone; One type or two or more types selected from polyether ether ketone and the like are exemplified.

Among these, from the viewpoint of improving mechanical properties and transparency, one or two selected from polypropylene, polyethylene terephthalate, polyethylene naphthalate, polyamide, polyimide, ethylene-vinyl acetate copolymer and polybutylene terephthalate More than one species is preferred, and one or two or more species selected from polyethylene terephthalate and polyethylene naphthalate are more preferred.

The substrate layer 10 may be a single layer or a layer of two or more types.

In addition, as a form of the resin film used to form the base material layer 10, a stretched film may be used, or a film stretched in a uniaxial direction or a biaxial direction may be used. From the viewpoint of improving the mechanical strength of the base layer 10, In, it is preferable that the film is stretched in a uniaxial direction or a biaxial direction. It is preferable that the base material layer 10 is previously annealed from a viewpoint of suppressing the warp of the electronic component after grinding. The substrate layer 10 may be subjected to surface treatment in order to improve adhesiveness with other layers. Specifically, you may perform corona treatment, plasma treatment, undercoat treatment, primer coating treatment, etc.

The thickness of the substrate layer 10 is preferably 20 μm or more and 250 μm or less, more preferably 30 μm or more and 200 μm or less, and still more preferably 50 μm or more and 150 μm or less, from the viewpoint of obtaining good film properties.

<Adhesive resin layer>

The adhesive film 50 according to this embodiment includes an ultraviolet curable adhesive resin layer 20 .

The adhesive resin layer 20 is a layer provided on one surface side of the substrate layer 10, and when sticking the adhesive film 50 on the circuit forming surface 30A of the electronic component 30, the electronic component ( 30) is a layer that contacts and adheres to the circuit forming surface 30A.

Examples of the pressure-sensitive adhesive constituting the adhesive resin layer 20 include (meth)acrylic pressure-sensitive adhesives, silicone-based pressure-sensitive adhesives, urethane-based pressure-sensitive adhesives, olefin-based pressure-sensitive adhesives, and styrenic pressure-sensitive adhesives. Among these, a (meth)acrylic pressure-sensitive adhesive containing a (meth)acrylic resin as a base polymer is preferable from the viewpoint of being able to easily adjust the adhesive strength.

Further, as the pressure-sensitive adhesive constituting the adhesive resin layer 20, it is preferable to use an ultraviolet crosslinkable pressure-sensitive adhesive that reduces the adhesive force by ultraviolet rays.

The adhesive resin layer 20 composed of the ultraviolet crosslinking type adhesive is crosslinked by irradiation with ultraviolet rays and the adhesive strength is remarkably reduced, so that the electronic component 30 can be easily separated from the adhesive film 50 .

As a (meth)acrylic-type resin contained in a (meth)acrylic-type adhesive, the homopolymer of a (meth)acrylic acid ester compound, the copolymer of a (meth)acrylic acid ester compound and a comonomer, etc. are mentioned, for example. Examples of the (meth)acrylic acid ester compound include methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, and hydroxyethyl (meth)acrylate. , hydroxypropyl (meth)acrylate, dimethylaminoethyl (meth)acrylate, glycidyl (meth)acrylate, and the like. These (meth)acrylic acid ester compounds may be used individually by 1 type, or may be used in combination of 2 or more types.

In addition, as a comonomer constituting the (meth)acrylic copolymer, for example, vinyl acetate, (meth)acrylonitrile, styrene, (meth)acrylic acid, itaconic acid, (meth)acrylamide, methylol (meth)acrylamide , maleic anhydride, and the like. These comonomers may be used individually by 1 type, or may be used in combination of 2 or more types.

As a (meth)acrylic pressure-sensitive adhesive of the ultraviolet crosslinking type, a (meth)acrylic resin having a polymerizable carbon-carbon double bond in a molecule and a photoinitiator are included, and the (meth)acrylic resin is crosslinked with a crosslinking agent as necessary, The adhesive obtained can be illustrated. The (meth)acrylic pressure-sensitive adhesive of the ultraviolet crosslinking type may further contain a low molecular weight compound having two or more polymerizable carbon-carbon double bonds in the molecule.

The (meth)acrylic resin having a polymerizable carbon-carbon double bond in the molecule is specifically obtained as follows. First, a monomer having an ethylenic double bond and a copolymerizable monomer having a functional group (P) are copolymerized. Then, a functional group (P) contained in this copolymer and a monomer having a functional group (Q) capable of causing an addition reaction or a condensation reaction with the functional group (P) are reacted while leaving the double bond in the monomer, A polymerizable carbon-carbon double bond is introduced into the copolymer molecule.

Examples of the monomer having an ethylenic double bond include alkyl acrylates and alkyl methacrylates such as methyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, butyl (meth)acrylate, and ethyl (meth)acrylate. Among monomers having ethylenic double bonds, such as ester monomers, vinyl esters such as vinyl acetate, (meth)acrylonitrile, (meth)acrylamide, and styrene, one type or two or more types are used.

Examples of the copolymerizable monomer having the functional group (P) include (meth)acrylic acid, maleic acid, 2-hydroxyethyl (meth)acrylate, glycidyl (meth)acrylate, N-methylol (meth)acrylamide, and (meth)acrylamide. ) Acryloyloxyethyl isocyanate etc. are mentioned. 1 type may be sufficient as these, and you may use them in combination of 2 or more types.

The ratio of the monomer having the ethylenic double bond and the copolymerizable monomer having the functional group (P) is 70 to 99% by mass of the monomer having the ethylenic double bond, and the copolymerizable monomer having the functional group (P) is 1 to It is preferable that it is 30 mass %. More preferably, the monomer having an ethylenic double bond is 80 to 95% by mass, and the copolymerizable monomer having a functional group (P) is 5 to 20% by mass.

As a monomer which has the said functional group (Q), the monomer similar to the copolymerizable monomer which has the said functional group (P) is mentioned, for example.

A combination of a functional group (P) and a functional group (Q) reacted when a polymerizable carbon-carbon double bond is introduced into a copolymer of a monomer having an ethylenic double bond and a copolymerizable monomer having a functional group (P), comprising a carboxyl group Combinations such as an epoxy group, a carboxyl group and an aziridyl group, a hydroxyl group and an isocyanate group, in which an addition reaction easily occurs, are preferred. In addition, not limited to an addition reaction, any reaction may be used as long as it is a reaction in which a polymerizable carbon-carbon double bond can be easily introduced, such as a condensation reaction between a carboxylic acid group and a hydroxyl group.

Examples of the low molecular weight compound having two or more polymerizable carbon-carbon double bonds in the molecule include tripropylene glycol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, tetramethylolmethane tetraacrylate, Pentaerythritol tetra(meth)acrylate, dipentaerythritol monohydroxy penta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, ditrimethylolpropane tetraacrylate, etc. are mentioned. These may use 1 type or 2 or more types. The addition amount of the low molecular weight compound having two or more polymerizable carbon-carbon double bonds in the molecule is preferably 0.1 to 20 parts by mass, more preferably 5 to 18 parts by mass, based on 100 parts by mass of the (meth)acrylic resin. is the mass part.

Examples of the photoinitiator include benzoin, isopropylbenzoin ether, isobutyl benzoin ether, benzophenone, Michler's ketone, chlorothioxanthone, dodecylthioxanthone, dimethylthioxanthone, diethylthioxanthone, Acetophenone diethyl ketal, benzyl dimethyl ketal, 1-hydroxycyclohexyl phenyl ketone, 2-hydroxy-2-methyl-1-phenylpropan-1-one, 2-benzyl-2-dimethylamino-4'-morph Polynobutyrophenone, 2,2-dimethoxy-2-phenylacetophenone, 2-dimethylamino-2-(4-methylbenzyl)-1-(4-morpholin-4-yl-phenyl)butane-1 -On, etc. can be mentioned. You may use these 1 type or 2 or more types. The addition amount of the photoinitiator is preferably 0.1 to 15 parts by mass, more preferably 1 to 10 parts by mass, still more preferably 4 to 10 parts by mass, based on 100 parts by mass of the (meth)acrylic resin.

You may add a crosslinking agent to the said ultraviolet curable adhesive. Examples of the crosslinking agent include epoxy compounds such as sorbitol polyglycidyl ether, polyglycerol polyglycidyl ether, pentaerythritol polyglycidyl ether, and diglycerol polyglycidyl ether, tetramethylolmethane-tri- β-aziridinylpropionate, trimethylolpropane-tri-β-aziridinylpropionate, N,N'-diphenylmethane-4,4'-bis(1-aziridinecarboxamide), N, aziridine-based compounds such as N'-hexamethylene-1,6-bis(1-aziridinecarboxamide); isocyanate-based compounds such as tetramethylene diisocyanate, hexamethylene diisocyanate, and polyisocyanate; and the like. Any of a solvent type, an emulsion type, a hot melt type, etc. may be sufficient as the said ultraviolet curable adhesive.

The content of the crosslinking agent is preferably within a range where the number of functional groups in the crosslinking agent does not usually exceed the number of functional groups in the (meth)acrylic resin. However, you may contain it excessively as needed, such as when a functional group newly arises in a crosslinking reaction, or when a crosslinking reaction is slow.

The content of the crosslinking agent in the (meth)acrylic adhesive is 0.1 part by mass or more and 15 parts by mass or less with respect to 100 parts by mass of the (meth)acrylic resin from the viewpoint of improving the balance with the heat resistance and adhesion of the adhesive resin layer 20. It is preferable, and it is more preferable that it is 0.5 mass part or more and 5 mass parts or less.

The adhesive resin layer 20 can be formed, for example, by applying an adhesive coating liquid on the substrate layer 10 .

As a method of applying the pressure-sensitive adhesive coating liquid, conventionally known coating methods such as a roll coater method, a reverse roll coater method, a gravure roll method, a bar coat method, a comma coater method, and a die coater method can be employed, for example. Drying conditions for the applied pressure-sensitive adhesive are not particularly limited, but it is generally preferable to dry for 10 seconds to 10 minutes in a temperature range of 80 to 200°C. More preferably, drying is performed at 80 to 170°C for 15 seconds to 5 minutes. In order to sufficiently accelerate the crosslinking reaction between the crosslinking agent and the (meth)acrylic resin, after drying of the pressure-sensitive adhesive coating liquid is completed, you may heat at 40 to 80°C for about 5 to 300 hours.

In the adhesive film 50 according to the present embodiment, the thickness of the adhesive resin layer 20 is preferably 10 μm or more and 100 μm or less, more preferably 10 μm or more and 50 μm or less. If the thickness of the adhesive resin layer 20 is within the above range, the balance between the adhesion to the surface of the electronic component 30 and the handleability is good.

2. Manufacturing method of electronic device

2 is a cross-sectional view schematically showing an example of a method for manufacturing an electronic device according to an embodiment of the present invention.

The manufacturing method of the electronic device according to the present embodiment includes at least the following three steps, for example.

(A) Step of preparing a structure 100 provided with an electronic component 30 having a circuit formation surface 30A and an adhesive film 50 bonded to the circuit formation surface 30A side of the electronic component 30

(B) a step (B) of back-grinding the surface on the opposite side to the circuit forming surface 30A side of the electronic component 30;

(C) Step of removing the adhesive film 50 from the electronic component 30 after irradiating the adhesive film 50 with ultraviolet rays

And as the adhesive film 50, the adhesive film 50 concerning this embodiment is used. The electronic device manufacturing method according to the present embodiment is characterized in that the adhesive film 50 according to the present embodiment is used as a so-called back grind tape when grinding the back surface of the electronic component 30 .

Hereinafter, each step of the manufacturing method of the electronic device according to the present embodiment will be described.

(Process (A))

First, a structure 100 including an electronic component 30 having a circuit formation surface 30A and an adhesive film 50 bonded to the circuit formation surface 30A side of the electronic component 30 is prepared.

Such a structure 100, for example, by peeling the release film from the adhesive resin layer 20 of the adhesive film 50, exposing the surface of the adhesive resin layer 20, on the adhesive resin layer 20 It can manufacture by sticking 30 A of circuit formation surfaces of the electronic component 30.

Here, the conditions at the time of sticking the circuit forming surface 30A of the electronic component 30 to the adhesive film 50 are not particularly limited, but, for example, the temperature is 20 to 80 ° C., the pressure is 0.05 to 0.5 MPa, The sticking speed can be 0.5 to 20 mm/sec.

Step (A) includes a step (A1-1) of half-cutting the electronic component 30 and a step (A1-2) of irradiating the electronic component 30 with a laser and forming a modified layer on the electronic component 30 (A1-2). ) At least one kind of process (A1) selected from, and a process (A2) of attaching the adhesive film 50 for back grinding to the circuit forming surface 30A side of the electronic component 30 after the process (A1) It is preferable to include more.

As described above, the adhesive film 50 according to the present embodiment can be suitably used in a manufacturing process of an electronic device using a pre-dicing method, a pre-stealth method, or the like. Therefore, the manufacturing method which performs the said process (A1-1) which becomes a pre-dicing method, or the said process (A1-2) which becomes a pre-stealth method is preferable.

In step (A2), the adhesive film 50 can be heated and attached to the circuit formation surface 30A of the electronic component 30 . Thereby, the adhesive state of the adhesive resin layer 20 and the electronic component 30 can be made good over a long time. The heating temperature is not particularly limited, but is, for example, 60 to 80°C.

The operation of attaching the adhesive film 50 to the electronic component may be performed by hand in some cases, but generally can be performed by a device called an automatic applicator having a roll-shaped adhesive film installed.

Although it does not specifically limit as the electronic component 30 attached to the adhesive film 50, It is preferable that it is the electronic component 30 which has the circuit formation surface 30A. For example, semiconductor wafers, epoxy mold wafers, mold panels, mold array packages, semiconductor substrates, etc. are mentioned, and semiconductor wafers and epoxy mold wafers are preferred.

Examples of semiconductor wafers include silicon wafers, sapphire wafers, germanium wafers, germanium-arsenic wafers, gallium-phosphorus wafers, gallium-arsenic-aluminum wafers, gallium-arsenic wafers, lithium tantalate wafers, etc. It is suitably used for silicon wafers. As the epoxy mold wafer, a wafer manufactured by an eWLB (Embedded Wafer Level Ball Grid Array) process, which is one of the manufacturing methods of a fan-out type WLP, is exemplified.

Although it does not specifically limit as a semiconductor wafer and epoxy mold wafer which have a circuit formation surface, For example, it is used for what circuits, such as wiring, a capacitor, a diode, or a transistor, were formed on the surface. Further, the circuit formation surface may be subjected to plasma treatment.

30 A of circuit formation surfaces of the electronic component 30 may become an uneven surface by having a bump electrode etc., for example.

In addition, the bump electrode is bonded to the electrode formed on the mounting surface, for example, when the electronic device is mounted on the mounting surface, to form an electrical connection between the electronic device and the mounting surface (mounting surface such as a printed circuit board). .

As a bump electrode, a ball bump, a printing bump, a stud bump, a plating bump, a pillar bump etc. are mentioned, for example. That is, bump electrodes are normally convex electrodes. These bump electrodes may be used individually by 1 type, or may use 2 or more types together.

The height and diameter of the bump electrode are not particularly limited, but are preferably 10 to 400 μm, and more preferably 50 to 300 μm, respectively. The bump pitch at that time is also not particularly limited, but is preferably 20 to 600 μm, more preferably 100 to 500 μm.

The type of metal constituting the bump electrode is not particularly limited, and examples thereof include solder, silver, gold, copper, tin, lead, bismuth, and alloys thereof. It is used suitably in the case of this solder bump. These metal species may be used individually by 1 type, or may use 2 or more types together.

(Process (B))

Subsequently, the surface (also referred to as the back surface) on the opposite side to the circuit forming surface 30A side of the electronic component 30 is subjected to back grinding.

Here, back-grinding means thinning to a predetermined thickness without damaging the electronic component.

For example, the structure 100 is fixed to the chuck table of a grinding machine or the like, and the back surface (circuit non-formation surface) of the electronic component is ground.

In this back side grinding operation, the electronic component 30 is ground until the thickness becomes equal to or less than the desired thickness. The thickness of the electronic component before grinding is appropriately determined by the diameter and type of the electronic component 30, and the thickness of the electronic component 30 after grinding is appropriately determined by the size of the resulting chip, the type of circuit, and the like.

In addition, when the electronic component 30 is half-cut or the modified layer is formed by laser irradiation, the electronic component 30 is divided into pieces by step (B) as shown in FIG. 1 .

Although it does not specifically limit as a back side grinding method, A well-known grinding method can be employ|adopted. Each grinding can be performed while cooling water over an electronic component and a grindstone. If necessary, at the end of the grinding process, a dry polishing process, which is a grinding method that does not use an abrasive, may be performed. After finishing the back side grinding, chemical etching is performed as needed. Chemical etching is a state in which the adhesive film 50 is adhered to an etchant selected from the group consisting of an alkaline aqueous solution such as an acidic aqueous solution consisting of hydrofluoric acid, nitric acid, sulfuric acid, acetic acid, etc. alone or in a mixture, potassium hydroxide aqueous solution, and sodium hydroxide aqueous solution. It is performed by a method such as immersing an electronic component in The etching is performed for the purpose of removing strain generated on the back surface of the electronic component, further thinning the electronic component, removing an oxide film or the like, and preprocessing when forming electrodes on the back surface. The etching solution is appropriately selected according to the above purpose.

(Process (C))

Next, after irradiating the adhesive film 50 with ultraviolet rays, the adhesive film 50 is removed from the electronic component 30 . Before removing the adhesive film from the electronic component 30, the electronic component 30 may be mounted on a dicing tape or a dicing tape with a die attach film. Although the operation of removing the adhesive film 50 from the electronic component 30 may be performed by hand in some cases, it can be performed by a device generally referred to as an automatic peeler.

You may wash the surface of the electronic component 30 after peeling the adhesive film 50 as needed. Examples of the cleaning method include wet cleaning such as water cleaning and solvent cleaning, dry cleaning such as plasma cleaning, and the like. In the case of wet cleaning, ultrasonic cleaning may be used in combination. These cleaning methods can be appropriately selected depending on the state of contamination of the surface of the electronic component.

In step (C), the adhesive film 50 is irradiated with ultraviolet light at a dose of, for example, 200 mJ/cm 2 or more and 2000 mJ/cm 2 or less, thereby photocuring the adhesive resin layer 20 and After lowering the adhesive force, the adhesive film 50 is removed from the electronic component 30 .

In addition, ultraviolet irradiation can be performed using ultraviolet rays with a main wavelength of 365 nm using, for example, a high-pressure mercury lamp.

Irradiation intensity of an ultraviolet-ray is 50 mW/cm<2> or more and 500 mW/cm<2> or less, for example.

(Other processes)

After performing the steps (A) to (C), a step of mounting the obtained semiconductor chip on a circuit board or the like may be further performed. These steps can be performed based on known information.

As mentioned above, although the preferable embodiment of this invention was described, these are examples of this invention, and various structures other than the above can also be employ|adopted.

Example

Hereinafter, the present invention will be specifically described by examples and comparative examples, but the present invention is not limited thereto.

Details regarding production of the adhesive film are as follows.

<base layer>

Substrate layer 1: Polyethylene terephthalate film (manufactured by Toyobo, product name: E7180, thickness: 50 μm, one-side corona treated product)

Base layer 2: laminated film composed of low density polyethylene film/polyethylene terephthalate film/low density polyethylene film (total thickness: 110 μm)

It was obtained by laminating low-density polyethylene films (density: 0.925 kg/m 3 , thickness: 30 μm) on both sides of a polyethylene terephthalate film (product name: Lumirror S10, manufactured by Toray Industries, thickness: 50 μm). Corona treatment was performed on one side of the obtained laminated film.

Substrate layer 3: laminated film composed of polyethylene terephthalate film/ethylene/vinyl acetate copolymer film/acrylic film (total thickness: 145 µm)

Polyethylene terephthalate film (manufactured by Toyobo, product name: E7180, thickness: 50 µm) and ethylene/vinyl acetate copolymer (manufactured by Mitsui-Dow Polychemicals, MFR: 2.5 g/10 min) film (thickness: 70 µm) was laminated by corona-treating the bonding surface side of the ethylene/vinyl acetate copolymer film with the polyethylene terephthalate film. Corona discharge treatment was also performed on the side opposite to the polyethylene terephthalate film of the ethylene-vinyl acetate copolymer film.

Next, the release surface of the polyethylene terephthalate film (separator) subjected to the release treatment was coated with the acrylic resin coating liquid for substrates shown below and dried to a dry thickness of 20 μm, and the above polyethylene terephthalate film/ethylene/vinyl acetate air The laminated film composed of the composite film was bonded through an ethylene/vinyl acetate copolymer film, and aged (40° C., 3 days). Then, the separator was peeled off, and the base material layer 3 was obtained.

<Acrylic resin coating liquid for substrate>

As a polymerization initiator, 74 parts by mass of butyl acrylate, 14 parts by mass of methyl methacrylate, meta 9 parts by mass of 2-hydroxyethyl acrylate, 2 parts by mass of methacrylic acid, 1 part by mass of acrylamide, and an aqueous solution of polyoxyethylene nonylpropenylphenyl ether ammonium sulfate (manufactured by Daiichi Kogyo Seiyaku Co., Ltd., product name: Aqualon HS) -1025) 3 parts by mass were subjected to emulsion polymerization in deionized water at 70°C for 9 hours. After the polymerization was completed, the pH was adjusted to 7 with aqueous ammonia to obtain an aqueous acrylic polymer emulsion having a solid content concentration of 42.5%. Next, with respect to 100 parts by mass of this acrylic polymer aqueous emulsion, while adjusting to pH = 9 or more using aqueous ammonia, 0.75 parts by mass of an aziridine-based crosslinking agent (Kemitite PZ-33, manufactured by Nippon Shokubai Chemical Industry Co., Ltd.) and 5 parts by mass of diethylene glycol monobutyl ether were blended to obtain a coating liquid for substrates.

<(meth)acrylic resin solution>

(meth)acrylic resin solution 1:

49 parts by mass of ethyl acrylate, 20 parts by mass of 2-ethylhexyl acrylate, 21 parts by mass of methyl acrylate, 10 parts by mass of glycidyl methacrylate, and 0.5 parts by mass of a benzoyl peroxide-based polymerization initiator as a polymerization initiator, 65 parts by mass of toluene and acetic acid It was made to react at 80 degreeC in 50 mass parts of ethyl for 10 hours. After completion of the reaction, the obtained solution was cooled, and 25 parts by mass of xylene, 5 parts by mass of acrylic acid, and 0.5 part by mass of tetradecyldimethylbenzylammonium chloride were added to the cooled solution, and the reaction was carried out at 85° C. for 32 hours while blowing air, ) Acrylic resin solution 1 was obtained.

(meth)acrylic resin solution 2:

77 parts by mass of n-butyl acrylate, 16 parts by mass of methyl methacrylate, 16 parts by mass of 2-hydroxyethyl acrylate, and 0.3 parts by mass of t-butylperoxy-2-ethylhexanoate as a polymerization initiator, 20 parts by mass of toluene and It was made to react at 85 degreeC in 80 mass parts of ethyl acetate for 10 hours. After completion of the reaction, the solution was cooled, and 30 parts by mass of toluene, 7 parts by mass of methacryloyloxyethyl isocyanate (manufactured by Showa Denko, product name: Karenz MOI) and 0.05 part by mass of dibutyltin dilaurylate were added to this solution. , It was made to react at 85 degreeC for 12 hours, blowing air, and the (meth)acrylic-type resin solution 2 was obtained.

(meth)acrylic resin solution 3:

30 parts by mass of ethyl acrylate, 11 parts by mass of methyl acrylate, 26 parts by mass of 2-ethylhexyl acrylate, 7 parts by mass of 2-hydroxyethyl methacrylate, and 0.8 parts by mass of a benzoyl peroxide-based polymerization initiator as a polymerization initiator, 7 parts by mass of toluene part and 50 parts by mass of ethyl acetate at 80°C for 9 hours. After completion of the reaction, the obtained solution was cooled, and 25 parts by mass of toluene was added to the cooled solution to obtain a (meth)acrylic resin solution 3.

<Adhesive film for evaluation of elongation at break>

An adhesive coating liquid for an adhesive resin layer was prepared by adding the additives shown in Table 1 to the acrylic resin solution. This coating solution was applied to the release-treated surface of a polyethylene terephthalate film (separator) subjected to silicone release treatment, and dried at 120°C for 3 minutes to form an adhesive resin layer having a thickness of 20 µm. Subsequently, a corona-treated surface of an ethylene-vinyl acetate copolymer extruded film (MFR: 1.7 g/10 min, vinyl acetate content: 9 mass%, thickness: 140 μm) subjected to corona treatment was bonded onto the adhesive resin layer to obtain a laminate. . Next, the obtained layered product was heated and aged at 40°C for 3 days in an oven.

<Adhesive film for evaluation of adhesion and pre-dicing>

An adhesive coating liquid for an adhesive resin layer was prepared by adding the additives shown in Table 1 to the acrylic resin solution. This coating liquid was applied to a polyethylene terephthalate film (separator) subjected to silicone release treatment. Then, it was dried at 120°C for 3 minutes to form an adhesive resin layer having a thickness of 20 µm and bonded to the substrate layer. About base material layer 1 and 2, it bonded to the corona treatment surface. Regarding the substrate layer 3, the separator was peeled off and bonded to the acrylic layer side. The obtained layered product was heated and aged at 40°C for 3 days in an oven.

<Evaluation method>

(1) Break elongation of adhesive resin layer after UV curing

From the ethylene/vinyl acetate copolymer extruded film side of the adhesive film for evaluation of elongation at break, to the adhesive resin layer, ultraviolet rays with a dominant wavelength of 365 nm were irradiated at an irradiation intensity of 100 mW/cm2 and an amount of ultraviolet rays of 1080 mJ/cm using a high-pressure mercury lamp in an environment of 25°C. cm 2 was investigated. Next, it was cut into 110 mm in length and 10 mm in width, and the polyethylene terephthalate film serving as the separator was peeled from the laminate.

Next, the adhesive resin layer and the ethylene-vinyl acetate copolymer extruded film were clamped with a tensile tester (Shimadzu Seisakusho, product name: Autograph AGS-X) so that the initial chuck-to-chuck distance Lo was 50 mm. The sample was pulled at a rate of 30 mm/min, and the point at which fracture was observed in the adhesive resin layer visually was defined as the fracture point, and the chuck-to-chuck distance at that time was defined as L. Elongation at break (%) was determined by (L-Lo)/Lo×100 (%). Evaluation was performed with N=2, and the values were averaged to obtain a measured value.

(2) Adhesion evaluation

Adherent wafer:

The mirror surface of a silicon mirror wafer (4-inch single-side mirror wafer, manufactured by SUMCO) was ozone-cleaned (ozone treatment time: 60 seconds) by a UV ozone cleaning device (UV-208, manufactured by Techno Vision). After that, the mirror surface of the wafer was wiped with ethanol to obtain an adherend wafer.

Adhesion before UV irradiation:

In an environment of 23° C. and 50% RH, the adhesive film for evaluating adhesive strength was cut into a width of 50 mm, the separator was peeled off, and the adhesive film was attached to the mirror surface of the adherend wafer via the adhesive resin layer using a hand roller. , and left for 1 hour. After standing, using a tensile tester (Shimadzu Seisakusho, product name: Autograph AGS-X), one end of the adhesive film was held, and the surface of the adherend wafer was held at a peel angle: 180 degrees and a peel speed: 300 mm/min. The adhesive film was peeled off from. The stress at that time was measured, converted into N/25 mm, and the adhesive force was determined. Evaluation was carried out at N = 2, and the values were averaged to obtain a measured value.

Adhesion after ultraviolet irradiation: In an environment of 23°C and 50% RH, the adhesive film for evaluating adhesive force was cut into a width of 50 mm, the separator was peeled off, and the adhesive film was passed through the adhesive resin layer using a hand roller to the adherend. It was attached to the mirror surface of the wafer and left to stand for 1 hour. After leaving, the adhesive film was irradiated with ultraviolet rays having a main wavelength of 365 nm at an irradiation intensity of 100 mW/cm 2 and an amount of ultraviolet rays of 1080 mJ/cm 2 in an environment of 25° C. using a high-pressure mercury lamp. After that, using a tensile tester (Shimadzu Seisakusho, product name: Autograph AGS-X), one end of the adhesive film was held, and the surface of the adherend wafer was held at a peel angle: 180 degrees and a peel speed: 300 mm/min. The adhesive film was peeled off from. The stress at that time was measured, converted into N/25 mm, and the adhesive force was determined. Evaluation was carried out at N = 2, and the values were averaged to obtain a measured value.

Adhesive Residue Evaluation:

The adherend wafer after the peeling was visually observed and evaluated according to the following criteria.

○: What adhesive residue is not confirmed

×: What adhesive residue was confirmed

(3) Evaluation of the pre-dicing method

Evaluation Wafer 1:

Using a dicing saw, the mirror surface of a mirror wafer (manufactured by K.S.T. World, 8-inch mirror wafer, diameter: 200 ± 0.5 mm, thickness: 725 ± 50 µm, single-sided mirror) was half-cut, and the evaluation wafer got 1 (Blade: ZH05-SD3500-N1-70-DD, chip size: 5 mm × 8 mm, cutting depth: 58 μm, blade rotation speed: 30000 rpm). When evaluation wafer 1 was observed with an optical microscope, the kerf width was 35 μm.

Evaluation Wafer 2:

Using a dicing saw, first-stage half-cut on the mirror surface of a mirror wafer (manufactured by K.S.T. World, 8-inch mirror wafer, diameter: 200 ± 0.5 mm, thickness: 725 ± 50 µm, single-sided mirror) was carried out (blade: Z09-SD2000-Y1 58 × 0.25A × 40 × 45E-L, chip size: 5 mm × 8 mm, cutting depth: 15 μm, blade rotation speed: 30000 rpm). When observed with an optical microscope, the kerf width was 60 μm. Subsequently, a second-stage half-cut was performed (blade: ZH05-SD3500-N1-70-DD, chip size: 5 mm × 8 mm, cutting depth: 58 μm, blade rotation speed: 30000 rpm), and evaluation wafer 2 was obtained. .

Pre-dicing method:

Using a tape laminator (DR3000II, manufactured by Nitto Denko Corporation), an adhesive film for pre-dicing evaluation was affixed to the half-cut surface of the evaluation wafer (23° C., affix speed: 5 mm/min, affix pressure: 0.36 MPa).

Then, using a grinder (DGP8760, manufactured by DISCO), the wafer was subjected to backside grinding (rough cutting and precision cutting, precision cutting amount: 40 μm, no polish, thickness after grinding: 38 μm), and separated into pieces.

The chip blowing at the time of pre-dicing was evaluated visually according to the following criteria after performing backside grinding.

○: Including the triangular corner portion, chip bounce is not confirmed

×: What chip bounce was confirmed including the triangular corner part

In addition, UV irradiation and peeling of the adhesive film for pre-dicing evaluation were performed, and the adhesive residue after the pre-dicing method was evaluated.

UV irradiation was performed using a high-pressure mercury lamp in a 25°C environment at a main wavelength of 365 nm and an irradiation intensity of 100 mW/cm 2 , and the adhesive film for pre-dicing evaluation was irradiated with an amount of 1080 mJ/cm 2 of ultraviolet rays.

Peeling of the adhesive film for pre-dicing evaluation was performed in the following procedure. First, using a wafer mounter (manufactured by Nitto Denko, MSA300), a separately prepared dicing tape (used as a mounting tape) is passed through the adhesive surface of the dicing tape, and the ring frame for an 8-inch wafer and the above-mentioned individualized It was affixed to the wafer side of the wafer. Subsequently, the adhesive film for pre-dicing evaluation was peeled from the wafer notch portion with a peeling tape (PET38REL, manufactured by Lasting System) using a tape peeling machine (HR3000III, manufactured by Nitto Denko). Device peelability was evaluated according to the following criteria.

○: First, the adhesive film for pre-dicing evaluation was able to be peeled off from the wafer.

×: First, the adhesive film for pre-dicing evaluation could not be peeled off from the wafer.

Adhesive residues on the separated wafers after the pre-dicing method were evaluated according to the following criteria using an optical microscope (manufactured by Olympus Co., Ltd.).

○: What adhesive residue is not confirmed

×: What adhesive residue was confirmed

[Example 1]

(Meth) acrylic resin solution 1 (solid content) 6.9 parts by mass of benzyldimethylketal (manufactured by IGM, trade name: Omnirad 651) as a photoinitiator, isocyanate-based crosslinking agent (manufactured by Mitsui Chemicals, trade name: Oresta P49) -75S) 0.93 parts by mass was added to obtain an adhesive coating liquid 1 for an adhesive resin layer. By the above-mentioned method, the adhesive film for breaking elongation evaluation, the adhesive film for adhesive force evaluation, and the adhesive film for pre-dicing evaluation were produced. In addition, based on the evaluation method described above, the breaking elongation of the adhesive material after ultraviolet curing, the adhesive force evaluation, and the pre-dicing method evaluation were performed. The results are shown in Table 1.

[Examples 2 to 10 and Comparative Examples 1 and 2]

Each adhesive film was produced in the same manner as in Example 1 except that the types of the adhesive resin layer and the substrate layer were changed to those shown in Table 1. In addition, each evaluation was performed similarly to Example 1, respectively. The obtained results are shown in Table 1, respectively.

In addition, the compounds described in Table 1 are as follows.

Omnirad 651 (manufactured by IGM): 2,2-dimethoxy-2-phenylacetophenone

Omnirad 369 (manufactured by IGM): 2-benzyl-2-dimethylamino-4'-morpholinobutyrophenone

Aronix M400 (manufactured by Toagosei Co., Ltd.): a mixture of dipentaerythritol pentaacrylate and dipentaerythritol hexaacrylate

NK ester AD-TMP (manufactured by Shin-Nakamura Chemical Industry Co., Ltd.): ditrimethylolpropane tetraacrylate

This application claims priority based on Japanese Patent Application No. 2020-076702 for which it applied on April 23, 2020, and uses all of the indication here.

10: base layer
20: adhesive resin layer
30: electronic component
30A: circuit forming surface
50: adhesive film
100: structure

Claims (7)

An adhesive film for backgrind comprising a substrate layer and an ultraviolet curable adhesive resin layer provided on one side of the substrate layer and used to protect the surface of an electronic component,
The adhesive film for back grind whose breaking elongation of the said adhesive resin layer after ultraviolet curing is 20 % or more and 200 % or less. According to claim 1,
The adhesive film for backgrinding, wherein the adhesive resin layer includes a (meth)acrylic resin having a polymerizable carbon-carbon double bond in a molecule and a photoinitiator. According to claim 1 or 2,
The adhesive film for backgrinding in which the electronic component is half-cut or a modified layer is formed. According to any one of claims 1 to 3,
The adhesive film for back grinding, wherein the thickness of the adhesive resin layer is 10 μm or more and 100 μm or less. According to any one of claims 1 to 4,
The resin constituting the base layer is polyolefin, polyester, polyamide, polyacrylate, polymethacrylate, polyvinyl chloride, polyvinylidene chloride, polyimide, polyetherimide, ethylene-vinyl acetate copolymer, polyacrylic An adhesive film for back grinding comprising one or two or more selected from ronitrile, polycarbonate, polystyrene, ionomer, polysulfone, polyethersulfone, and polyphenylene ether. Step (A) of preparing a structure comprising an electronic component having a circuit formation surface and an adhesive film bonded to the circuit formation surface side of the electronic component;
a step (B) of back-grinding a surface of the electronic component opposite to the circuit formation surface;
Step (C) of removing the adhesive film from the electronic component after irradiating the adhesive film with ultraviolet rays.
A method of manufacturing an electronic device comprising at least
A method for manufacturing an electronic device, wherein the adhesive film is the adhesive film for back grinding according to any one of claims 1 to 5. According to claim 6,
In the step (A),
At least one kind of step (A1) selected from the step of half-cutting the electronic component (A1-1) and the step of irradiating the electronic component with a laser to form a modified layer on the electronic component (A1-2) class,
After the step (A1), a step (A2) of attaching the adhesive film for back grinding to the circuit formation surface side of the electronic component
A method of manufacturing an electronic device comprising:

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