WO2022019166A1

WO2022019166A1 - Method for producing electronic device

Info

Publication number: WO2022019166A1
Application number: PCT/JP2021/026141
Authority: WO
Inventors: 浩登安井; 宏嘉栗原; 仁木下
Original assignee: 三井化学東セロ株式会社
Priority date: 2020-07-22
Filing date: 2021-07-12
Publication date: 2022-01-27
Also published as: KR20230031942A; JPWO2022019166A1; CN116157481A; TW202209459A

Abstract

A method for producing an electronic device comprising at least: a step (A) for preparing a structure (100) which is provided with an electronic component (30) that has a circuit formation surface (30A), and an adhesive film (50) that is bonded to the circuit formation surface (30A) side of the electronic component (30); a step (B) for back grinding the surface of the electronic component (30) on the reverse side of the circuit formation surface (30A); and a step (C) for removing the adhesive film (50) from the electronic component (30) after irradiating the adhesive film (50) with UV rays. The adhesive film (50) comprises a base material layer (10) and a UV curable adhesive resin layer (20) that is provided on one surface of the base material layer (10), and the 60° peel strength of the adhesive film (50), as measured using the following method, after being irradiated with UV rays is 0.4N/25mm to 5.0N/25mm, inclusive. (Method) The adhesive film (50) is affixed to a silicon mirror wafer so that the adhesive resin layer (20) is in contact with the silicon mirror wafer. Subsequently, a high-pressure mercury lamp is used to irradiate the adhesive resin layer (20) in an environment of 25°C with UV rays having a main wavelength of 365nm at an irradiation intensity of 100 mW/cm² and a UV ray amount of 1,080 mJ/cm², thereby UV curing the adhesive resin layer (20). Then, a tensile testing machine is used to peel the adhesive film (50) from the silicon mirror wafer at 23°C and a speed of 150 mm/min in a 60° direction, and the strength (N/25mm) at that time serves as the 60° peel strength.

Description

Manufacturing method of electronic device

The present invention relates to a method for manufacturing an electronic device.

In the process of grinding an electronic component in the manufacturing process of an electronic device, an adhesive film is attached to the circuit forming surface of the electronic component in order to fix the electronic component and prevent damage to the electronic component. Be done.
As such an adhesive film, a film in which an adhesive resin layer is laminated on a base film is generally used.

With the progress of high-density mounting technology, there is a demand for thinning of electronic parts such as semiconductor wafers, and for example, it is required to thin the thickness to 50 μm or less.
As one of such thin-thickening processes, a pre-dicing method is used in which a groove having a predetermined depth is formed on the surface of an electronic component before grinding the electronic component, and then grinding is performed to separate the electronic component into individual pieces. There is. Further, there is a pre-stealth method in which a modified region is formed by irradiating the inside of an electronic component with a laser before grinding, and then grinding is performed to individualize the electronic component.

As a technique relating to such an adhesive film for a pre-dicing method or a pre-stealth method, for example, Patent Document 1 (Japanese Unexamined Patent Publication No. 2014-75560) and Patent Document 2 (Japanese Unexamined Patent Publication No. 2016-72546) are described. Things can be mentioned.

Patent Document 1 describes a surface protective sheet having an adhesive layer on a substrate and satisfying the following requirements (a) to (d).
(A) Young's modulus of the substrate is 450 MPa or more (b) Storage elastic modulus of the pressure-sensitive adhesive layer at 25 ° C. is 0.10 MPa or more (c) Storage elasticity of the pressure-sensitive adhesive layer at 50 ° C. The ratio is 0.20 MPa or less. (D) The thickness of the pressure-sensitive adhesive layer is 30 μm or more. It is stated that water intrusion (sludge infiltration) can be suppressed from the gap formed in the work to the protected surface of the work to prevent contamination of the protected surface of the work.

Patent Document 2 has a base material resin film and a radiation-curable pressure-sensitive adhesive layer formed on at least one side of the base material resin film, and the base material resin film has a tensile elasticity of 1 to 1 to 2. A semiconductor characterized by having at least one rigid layer having 10 GPa and having a peeling force of 0.1 to 3.0 N / 25 mm at a peeling angle of 30 ° after the pressure-sensitive adhesive layer is radiation-cured. Adhesive tape for protecting the surface of the wafer is described.
According to Patent Document 2, such an adhesive tape for protecting the surface of a semiconductor wafer suppresses calf shift of an individualized semiconductor chip in a backside grinding process of a semiconductor wafer to which a pre-dicing method or a pre-stealth method is applied. At the same time, it is stated that the semiconductor wafer can be processed without being damaged or contaminated.

Japanese Unexamined Patent Publication No. 2014-75560 Japanese Unexamined Patent Publication No. 2016-72546

According to the studies by the present inventors, for example, in the manufacturing process of an electronic device using a pre-dicing method, a pre-stealth method, etc., when the adhesive film is peeled off from the electronic component after the backgrinding process, the electronic component side It became clear that adhesive residue was likely to occur in the product.

The present invention has been made in view of the above circumstances, and a method for manufacturing an electronic device capable of suppressing adhesive residue on the electronic component side when peeling an adhesive film from an electronic component after a backgrinding process is provided. It is to provide.

The present inventors have made extensive studies in order to achieve the above-mentioned problems. As a result, by adjusting the 60 ° peel strength of the adhesive film after irradiation with ultraviolet rays to a specific range, the adhesive residue on the electronic component side when the adhesive film is peeled from the electronic component after the backgrinding process. The present invention has been completed by finding that it is possible to suppress the above.

According to the present invention, the following method for manufacturing an electronic device is provided.

[1]
A step (A) of preparing a structure including an electronic component having a circuit forming surface and an adhesive film bonded to the circuit forming surface side of the electronic component.
The step (B) of backgrinding the surface of the electronic component opposite to the circuit forming surface side, and
The step (C) of removing the adhesive film from the electronic component after irradiating the adhesive film with ultraviolet rays, and
A method of manufacturing an electronic device that includes at least
The adhesive film comprises a base material layer and an ultraviolet curable adhesive resin layer provided on one surface side of the base material layer.
A method for manufacturing an electronic device, which is measured by the following method and has a 60 ° peel strength of the adhesive film after irradiation with ultraviolet rays of 0.4 N / 25 mm or less and 5.0 N / 25 mm or less.
(Method)
The adhesive film is attached to the silicon mirror wafer so that the adhesive resin layer is in contact with the silicon mirror wafer. Next, the adhesive film is irradiated with ultraviolet rays having a main wavelength of 365 nm under an environment of 25 ° C. with an irradiation intensity of 100 mW / cm ² and an ultraviolet amount of 1080 mJ / cm ^{2 to} irradiate the adhesive resin layer with ultraviolet rays. Cure. Next, using a tensile tester, the adhesive film was peeled from the silicon mirror wafer in the 60 ° direction at 23 ° C. and a speed of 150 mm / min, and the strength (N / 25 mm) at that time was peeled off by 60 °. Let it be strength.
[2]
In the method for manufacturing an electronic device according to the above [1],
The above step (A) is
At least one step (A1-2) selected from a step of half-cutting the electronic component (A1-1) and a step of irradiating the electronic component with a laser to form a modified layer on the electronic component (A1-2). A1) and
After the step (A1), the step (A2) of attaching the adhesive film to the circuit forming surface side of the electronic component and the step (A2).
A method of manufacturing an electronic device including.
[3]
In the method for manufacturing an electronic device according to the above [1] or [2].
In the step (C), the adhesive resin layer is cured by ultraviolet rays by irradiating the ^{adhesive film with ultraviolet rays having a dose of 200 mJ / cm 2} or more and 2000 mJ / cm ^{2 or less to cure the adhesive resin layer.} A method for manufacturing an electronic device that removes the adhesive film from the electronic component after reducing the adhesive strength.
[4]
In the method for manufacturing an electronic device according to any one of the above [1] to [3].
The method for manufacturing an electronic device, wherein the adhesive resin layer contains a (meth) acrylic resin having a polymerizable carbon-carbon double bond in the molecule and a photoinitiator.
[5]
In the method for manufacturing an electronic device according to any one of the above [1] to [4].
A method for manufacturing an electronic device in which the thickness of the adhesive resin layer is 5 μm or more and 300 μm or less.
[6]
In the method for manufacturing an electronic device according to any one of the above [1] to [5].
The resins constituting the base material layer are polyolefin, polyester, polyamide, polyacrylate, polymethacrylate, polyvinyl chloride, polyvinylidene chloride, polyimide, polyetherimide, ethylene / vinyl acetate copolymer, polyacrylonitrile, polycarbonate, polystyrene. , A method for producing an electronic device comprising one or more selected from ionomer, polysulfone, polyethersulfone and polyphenylene ether.

According to the present invention, it is possible to provide a method for manufacturing an electronic device capable of suppressing adhesive residue on the electronic component side when the adhesive film is peeled from the electronic component after the back grind process.

It is sectional drawing which shows typically an example of the structure of the adhesive film of embodiment which concerns on this invention. It is sectional drawing which shows typically an example of the manufacturing method of the electronic device of embodiment which concerns on this invention.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In all the drawings, similar components are designated by a common reference numeral, and the description thereof will be omitted as appropriate. Further, the figure is a schematic view and does not match the actual dimensional ratio. Unless otherwise specified, "A to B" in the numerical range represent A or more and B or less. Further, in the present embodiment, "(meth) acrylic" means acrylic, methacrylic or both acrylic and methacrylic.

FIG. 1 is a cross-sectional view schematically showing an example of the structure of the adhesive film 50 according to the embodiment of the present invention. FIG. 2 is a cross-sectional view schematically showing an example of a method for manufacturing an electronic device according to an embodiment of the present invention.
The method for manufacturing an electronic device according to the present embodiment prepares a structure 100 including an electronic component 30 having a circuit forming surface 30A and an adhesive film 50 bonded to the circuit forming surface 30A side of the electronic component 30. The step (A), the step (B) of backgrinding the surface of the electronic component 30 opposite to the circuit forming surface 30A side, and the adhesive film 50 from the electronic component 30 after irradiating the adhesive film 50 with ultraviolet rays. A method for manufacturing an electronic device including at least a removing step (C), wherein the adhesive film 50 is an ultraviolet curable adhesive provided on one surface side of the base material layer 10 and the base material layer 10. The 60 ° peel strength of the adhesive film 50 after irradiation with ultraviolet rays (after curing with ultraviolet rays), which is provided with the sex resin layer 20 and is measured by the following method, is 0.4 N / 25 mm or more and 5.0 N / 25 mm or less. Is.
(Method) The adhesive film 50 is attached to the silicon mirror wafer so that the adhesive resin layer 20 is in contact with the silicon mirror wafer. Next, the adhesive film 50 is irradiated with ultraviolet rays having a main wavelength of 365 nm under an environment of 25 ° C. with an irradiation intensity of 100 mW / cm ² and an ultraviolet amount of 1080 mJ / cm ^{2 to} irradiate the adhesive resin layer 20 with ultraviolet rays. Cure. Next, using a tensile tester, the adhesive film 50 is peeled from the silicon mirror wafer in the 60 ° direction under the conditions of 23 ° C. and a speed of 150 mm / min, and the strength (N / 25 mm) at that time is peeled off by 60 °. Let it be strength.

As described above, according to the studies by the present inventors, for example, in the manufacturing process of an electronic device using a pre-dicing method, a pre-stealth method, or the like, the adhesive film 50 is peeled off from the electronic component 30 after the back grind process. At that time, it became clear that adhesive residue was likely to occur on the electronic component 30 side.
The reason for this is not clear, but unlike the backgrinding process of a normal electronic component 30, it is necessary to peel off the adhesive film 50 from the split electronic component 30, so glue is applied to the edge of the split electronic component 30. It is thought that the rest is likely to occur.
The present inventors have made extensive studies to achieve the above-mentioned problems. As a result, by adjusting the 60 ° peel strength of the adhesive film 50 after irradiation with ultraviolet rays to a specific range, the electronic component 30 when peeling the adhesive film 50 from the electronic component 30 after the backgrinding step is performed. For the first time, we have found that it is possible to suppress the adhesive residue on the side.

In the method for manufacturing an electronic device according to the present embodiment, the 60 ° peel strength of the adhesive film 50 after irradiation with ultraviolet rays, which is measured by the above method, is from the viewpoint of preventing adhesive residue on the wafer in various surface states. It is adjusted to 0.4 N / 25 mm or more and 5.0 N / 25 mm or less, preferably 3.0 N / 25 mm or less, and more preferably 2.5 N / 25 mm or less.
The 60 ° peel strength of the adhesive film 50 after irradiation with ultraviolet rays in the step (C) is, for example, the type and blending ratio of the adhesive resin and the cross-linking agent constituting the adhesive resin layer 20, the light initiator, and the adhesiveness. It can be controlled within the above range by controlling the type and content ratio of each monomer in the sex resin.

1. 1. Adhesive film As shown in FIG. 1, the adhesive film 50 according to the present embodiment includes a base material layer 10 and an ultraviolet curable adhesive resin layer 20 provided on one surface side of the base material layer 10. , Equipped with.

The thickness of the entire adhesive film 50 according to the present embodiment is preferably 50 μm or more and 600 μm or less, more preferably 50 μm or more and 400 μm or less, and further preferably 50 μm or more and 300 μm, from the viewpoint of the balance between mechanical properties and handleability. It is as follows.

The adhesive film 50 according to the present embodiment is provided with other layers such as a concave-convex absorbent resin layer, an adhesive layer, and an antistatic layer (not shown) between the layers as long as the effects of the present invention are not impaired. May be good. According to the unevenness absorbing resin layer, the unevenness absorbing property of the adhesive film 50 can be improved. According to the adhesive layer, the adhesiveness between the layers can be improved. Further, according to the antistatic layer, the antistatic property of the adhesive film 50 can be improved.

Next, each layer constituting the adhesive film 50 according to the present embodiment will be described.

<Base layer>
The base material layer 10 is a layer provided for the purpose of improving the handleability, mechanical properties, heat resistance, and other properties of the adhesive film 50.
The base material layer 10 is not particularly limited as long as it has mechanical strength capable of withstanding an external force applied when processing the electronic component 30, and examples thereof include a resin film.
Examples of the resin constituting the base material layer 10 include polyolefins such as polyethylene, polypropylene, poly (4-methyl-1-pentene) and poly (1-butene); polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate and the like. Polyester; Polyester such as Nylon-6, Nylon-66, Polymethoxylen adipamide; (Meta) acrylic resin; Polyvinyl chloride; Polyvinyl chloride; Polyethylene; Polyetherimide; Ethylene / vinyl acetate copolymer; Poly One or more selected from acrylonitrile; polycarbonate; polystyrene; ionomer; polysulfone; polyethersulfone; polyether ether ketone and the like can be mentioned.
Among these, one or more selected from polypropylene, polyethylene terephthalate, polyethylene naphthalate, polyamide, polyimide, ethylene-vinyl acetate copolymer and polybutylene terephthalate from the viewpoint of improving mechanical properties and transparency. Preferably, one or more selected from polyethylene terephthalate and polyethylene naphthalate are more preferable.

The base material layer 10 may be a single layer or two or more types of layers.
Further, the form of the resin film used for forming the base material layer 10 may be a stretched film or a film stretched in a uniaxial direction or a biaxial direction, but the base material layer 10 may be used. From the viewpoint of improving the mechanical strength of the film, it is preferable that the film is stretched in the uniaxial direction or the biaxial direction. The base material layer 10 is preferably annealed in advance from the viewpoint of suppressing warpage of the electronic component 30 after grinding. The base material layer 10 may be surface-treated in order to improve the adhesiveness with other layers. Specifically, corona treatment, plasma treatment, undercoat treatment, primer coating treatment and the like may be performed.

The thickness of the base material layer 10 is preferably 20 μm or more and 250 μm or less, more preferably 30 μm or more and 200 μm or less, and further preferably 50 μm or more and 150 μm or less from the viewpoint of obtaining good film characteristics.

<Adhesive resin layer>
The adhesive film 50 according to the present embodiment includes an ultraviolet curable adhesive resin layer 20.
The adhesive resin layer 20 is a layer provided on one surface side of the base material layer 10, and when the adhesive film 50 is attached to the circuit forming surface 30A of the electronic component 30, the circuit forming surface 30A of the electronic component 30 is attached. It is a layer that comes into contact with and adheres to.

Examples of the adhesive constituting the adhesive resin layer 20 include (meth) acrylic adhesive, silicone adhesive, urethane adhesive, olefin adhesive, styrene adhesive and the like. Among these, a (meth) acrylic pressure-sensitive adhesive using a (meth) acrylic resin as a base polymer is preferable because the adhesive strength can be easily adjusted.

Further, as the pressure-sensitive adhesive constituting the pressure-sensitive adhesive resin layer 20, it is preferable to use an ultraviolet cross-linked pressure-sensitive adhesive whose adhesive strength is lowered by ultraviolet rays.
Since the adhesive resin layer 20 composed of the ultraviolet cross-linking type adhesive is crosslinked by irradiation with ultraviolet rays and the adhesive force is remarkably reduced, the electronic component 30 can be easily peeled off from the adhesive film 50.

Examples of the (meth) acrylic resin contained in the (meth) acrylic pressure-sensitive adhesive include a homopolymer of a (meth) acrylic acid ester compound, a copolymer of a (meth) acrylic acid ester compound and a comonomer, and the like. Be done. Examples of the (meth) acrylic acid ester compound include methyl (meth) acrylate, ethyl (meth) acrylate, butyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, hydroxyethyl (meth) acrylate, and hydroxypropyl (meth). Examples thereof include acrylate, dimethylaminoethyl (meth) acrylate, and glycidyl (meth) acrylate. These (meth) acrylic acid ester compounds may be used alone or in combination of two or more.
Examples of the comonomer constituting the (meth) acrylic copolymer include vinyl acetate, (meth) acrylonitrile, styrene, (meth) acrylic acid, itaconic acid, (meth) acrylic amide, and methylol (meth) acrylic. Examples thereof include acrylamide and maleic anhydride. These comonomer may be used alone or in combination of two or more.

The ultraviolet cross-linking type (meth) acrylic pressure-sensitive adhesive contains a (meth) acrylic resin having a polymerizable carbon-carbon double bond in the molecule and a photoinitiator, and if necessary, a cross-linking agent can be used as described above ( Meta) An example of a pressure-sensitive adhesive obtained by cross-linking an acrylic resin can be exemplified. The UV-crosslinked (meth) acrylic pressure-sensitive adhesive may further contain a low molecular weight compound having two or more polymerizable carbon-carbon double bonds in the molecule.

The (meth) acrylic resin having a polymerizable carbon-carbon double bond in the molecule is specifically obtained as follows. First, a monomer having an ethylenic double bond and a copolymerizable monomer having a functional group (P) are copolymerized. Next, the functional group (P) contained in this copolymer and the monomer having a functional group (Q) capable of causing an addition reaction, a condensation reaction, etc. with the functional group (P) are double-bonded in the monomer. The reaction is carried out while leaving the above, and a polymerizable carbon-carbon double bond is introduced into the copolymer molecule.

Examples of the monomer having an ethylenic double bond include acrylic acid alkyl esters such as methyl (meth) acrylate, -2-ethylhexyl (meth) acrylate, butyl (meth) acrylate, and ethyl (meth) acrylate. And, one or more of the monomers having an ethylenic double bond such as an alkyl methacrylate ester monomer, a vinyl ester such as vinyl acetate, (meth) acrylonitrile, (meth) acrylamide, and styrene are used.

Examples of the copolymerizable monomer having the functional group (P) include (meth) acrylic acid, maleic acid, 2-hydroxyethyl (meth) acrylate, glycidyl (meth) acrylate, N-methylol (meth) acrylamide, and (meth). ) Acryloyloxyethyl isocyanate and the like can be mentioned. These may be used alone or in combination of two or more.
The ratio of the monomer having an ethylenic double bond to the copolymerizable monomer having a functional group (P) is 70 to 99% by mass of the monomer having an ethylenic double bond and has a functional group (P). The copolymerizable monomer is preferably 1 to 30% by mass. More preferably, the monomer having an ethylenic double bond is 80 to 95% by mass, and the copolymerizable monomer having a functional group (P) is 5 to 20% by mass.
Examples of the monomer having the functional group (Q) include a monomer similar to the copolymerizable monomer having the functional group (P).

A functional group (P) and a functional group to be reacted when a polymerizable carbon-carbon double bond is introduced into a copolymer of a monomer having an ethylenic double bond and a copolymerizable monomer having a functional group (P). As the combination of (Q), a combination such as a carboxyl group and an epoxy group, a carboxyl group and an aziridyl group, a hydroxyl group and an isocyanate group, etc., in which an addition reaction easily occurs is desirable. Further, not limited to the addition reaction, any reaction may be used as long as it is a reaction in which a polymerizable carbon-carbon double bond can be easily introduced, such as a condensation reaction between a carboxylic acid group and a hydroxyl group.

Examples of the low molecular weight compound having two or more polymerizable carbon-carbon double bonds in the molecule include tripropylene glycol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, tetramethylolmethanetetraacrylate, and pentaerythritol. Examples thereof include tetra (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, and ditrimethylolpropane tetraacrylate. These may be used alone or in combination of two or more. The amount of the low molecular weight compound having two or more polymerizable carbon-carbon double bonds in the molecule is preferably 0.1 to 20 parts by mass with respect to 100 parts by mass of the (meth) acrylic resin. More preferably, it is 5 to 18 parts by mass.

Examples of the photoinitiator include benzoin, isopropylbenzoin ether, isobutyl benzoin ether, benzophenone, Michler ketone, chlorothioxanthone, dodecylthioxanthone, dimethylthioxanthone, diethylthioxanthone, acetophenone diethyl ketal, benzyl dimethyl ketal, 1-hydroxycyclohexylphenyl ketone, 2 -Hydroxy-2-methyl-1-phenylpropan-1-one, 2-benzyl-2-dimethylamino-4'-morpholinobtyrophenone, 2,2-dimethoxy-2-phenylacetophenone, 2-dimethylamino-2- Examples thereof include (4-methylbenzyl) -1- (4-morpholin-4-yl-phenyl) butane-1-one. These may be used alone or in combination of two or more. The amount of the photoinitiator added is preferably 0.1 to 15 parts by mass, more preferably 1 to 10 parts by mass, and further preferably 4 to 4 parts by mass with respect to 100 parts by mass of the (meth) acrylic resin. It is 10 parts by mass.

A cross-linking agent may be added to the ultraviolet curable pressure-sensitive adhesive. Examples of the cross-linking agent include epoxy compounds such as sorbitol polyglycidyl ether, polyglycerol polyglycidyl ether, pentaerythritol polyglycidyl ether, and diglycerol polyglycidyl ether, and tetramethylolmethane-tri-β-aziridinyl propionate. Trimethylolpropane-tri-β-aziridinyl propionate, N, N'-diphenylmethane-4,4'-bis (1-azilidine carboxylamide), N, N'-hexamethylene-1,6-bis ( Examples thereof include aziridin-based compounds such as 1-azilysin carboxylamide), and isocyanate-based compounds such as tetramethylene diisocyanate, hexamethylene diisocyanate, and polyisocyanate. The ultraviolet curable pressure-sensitive adhesive may be any of a solvent type, an emulsion type, a hot melt type and the like.

The content of the cross-linking agent is usually preferably in a range such that the number of functional groups in the cross-linking agent does not become larger than the number of functional groups in the (meth) acrylic resin. However, if a new functional group is generated in the cross-linking reaction or the cross-linking reaction is slow, the cross-linking reaction may be excessively contained as needed.
The content of the cross-linking agent in the (meth) acrylic pressure-sensitive adhesive is 0. It is preferably 1 part by mass or more and 15 parts by mass or less, and preferably 0.5 part by mass or more and 5 parts by mass or less.

The adhesive resin layer 20 can be formed, for example, by applying an adhesive coating liquid on the base material layer 10.
As a method for applying the pressure-sensitive adhesive coating liquid, for example, a conventionally known coating method such as a roll coater method, a reverse roll coater method, a gravure roll method, a bar coat method, a comma coater method, or a die coater method can be adopted. .. The drying conditions of the applied pressure-sensitive adhesive are not particularly limited, but in general, it is preferable to dry the applied adhesive in a temperature range of 80 to 200 ° C. for 10 seconds to 10 minutes. More preferably, it is dried at 80 to 170 ° C. for 15 seconds to 5 minutes. In order to sufficiently promote the cross-linking reaction between the cross-linking agent and the (meth) acrylic resin, the pressure-sensitive adhesive coating liquid may be heated at 40 to 80 ° C. for about 5 to 300 hours after the drying is completed.

In the adhesive film 50 according to the present embodiment, the thickness of the adhesive resin layer 20 is preferably 5 μm or more and 300 μm or less, more preferably 10 μm or more and 100 μm or less, and further preferably 10 μm or more and 50 μm or less. When the thickness of the adhesive resin layer 20 is within the above range, the balance between the adhesiveness to the surface of the electronic component 30 and the handleability is good.

2. 2. Manufacturing Method of Electronic Device The manufacturing method of the electronic device according to the present embodiment includes at least the following three steps.
(A) A step of preparing a structure 100 including an electronic component 30 having a circuit forming surface 30A and an adhesive film 50 bonded to the circuit forming surface 30A side of the electronic component 30 (B) Circuit of the electronic component 30. Step of backgrinding the surface opposite to the forming surface 30A side (C) Step of removing the adhesive film 50 from the electronic component 30 after irradiating the adhesive film 50 with ultraviolet rays. The adhesive film 50 after being irradiated with ultraviolet rays is characterized in that the 60 ° peel strength is 0.4 N / 25 mm or more and 5.0 N / 25 mm or less.
(Method) The adhesive film 50 is attached to the silicon mirror wafer so that the adhesive resin layer 20 is in contact with the silicon mirror wafer. Next, the adhesive resin layer 20 is irradiated with ultraviolet rays having a main wavelength of 365 nm using a high-pressure mercury lamp in an environment of 25 ° C. with an irradiation intensity of 100 mW / cm ² and an ultraviolet amount of 1080 mJ / cm ^2. Cure with UV light. Next, using a tensile tester, the adhesive film 50 is peeled from the silicon mirror wafer in the 60 ° direction under the conditions of 23 ° C. and a speed of 150 mm / min, and the strength (N / 25 mm) at that time is peeled off by 60 °. Let it be strength.
Hereinafter, each step of the method for manufacturing an electronic device according to the present embodiment will be described.

(Step (A))
First, a structure 100 including an electronic component 30 having a circuit forming surface 30A and an adhesive film 50 bonded to the circuit forming surface 30A side of the electronic component 30 is prepared.
In such a structure 100, for example, the release film is peeled off from the adhesive resin layer 20 of the adhesive film 50 to expose the surface of the adhesive resin layer 20, and an electronic component is placed on the adhesive resin layer 20. It can be manufactured by pasting the circuit forming surface 30A of 30.

Here, the conditions for attaching the circuit forming surface 30A of the electronic component 30 to the adhesive film 50 are not particularly limited, but for example, the temperature is 20 to 80 ° C., the pressure is 0.05 to 0.5 MPa, and the attachment speed. Can be 0.5 to 20 mm / sec.

The step (A) is selected from a step of half-cutting the electronic component 30 (A1-1) and a step of irradiating the electronic component 30 with a laser to form a modified layer on the electronic component 30 (A1-2). It is preferable to further include at least one step (A1) and a step (A2) of attaching the adhesive film 50 to the circuit forming surface 30A side of the electronic component 30 after the step (A1).
As described above, in the manufacturing process of an electronic device using the pre-dicing method, the pre-stealth method, etc., the pre-dicing method, the pre-stealth method, etc. are used because the electronic component 30 is likely to be skipped or chipped after the back grind process. The method for manufacturing an electronic device according to the present embodiment can be suitably applied to the manufacturing process of the electronic device. Therefore, a manufacturing method in which the above-mentioned step (A1-1), which is a pre-dicing method, and the above-mentioned step (A1-2), which is a pre-stealth method, is preferable.

In the step (A2), the adhesive film 50 can be heated and attached to the circuit forming surface 30A of the electronic component 30. Thereby, the adhesive state between the adhesive resin layer 20 and the electronic component 30 can be improved for a long time. The heating temperature is not particularly limited, but is, for example, 60 to 80 ° C.

The operation of attaching the adhesive film 50 to the electronic component 30 may be performed manually, but in general, it can be performed by a device called an automatic attaching machine to which a roll-shaped adhesive film is attached.

The electronic component 30 to be attached to the adhesive film 50 is not particularly limited, but is preferably the electronic component 30 having the circuit forming surface 30A. Examples thereof include semiconductor wafers, epoxy mold wafers, mold panels, mold array packages, semiconductor substrates and the like, and semiconductor wafers and epoxy mold wafers are preferable.
Examples of semiconductor wafers include silicon wafers, sapphire wafers, germanium wafers, germanium-arsenic wafers, gallium-phosphorus wafers, gallium-arsenic-aluminum wafers, gallium-arsenic wafers, lithium tartrate wafers, and the like. It is suitably used for. Examples of the epoxy molded wafer include a wafer manufactured by the eWLB (Embedded Wafer Level Ball Grid Array) process, which is one of the methods for manufacturing a fan-out type WLP.
The semiconductor wafer and the epoxy molded wafer having a circuit forming surface are not particularly limited, and are used, for example, those in which a circuit such as a wiring, a capacitor, a diode or a transistor is formed on the surface. Further, the circuit forming surface may be subjected to plasma treatment.

The circuit forming surface 30A of the electronic component 30 may be an uneven surface by having, for example, a bump electrode or the like.
Further, for example, when the electronic device is mounted on the mounting surface, the bump electrode is bonded to the electrode formed on the mounting surface, and the bump electrode is formed between the electronic device and the mounting surface (mounting surface such as a printed substrate). It forms an electrical connection.
Examples of the bump electrode include ball bumps, printed bumps, stud bumps, plated bumps, pillar bumps and the like. That is, the bump electrode is usually a convex electrode. These bump electrodes may be used alone or in combination of two or more.
The height and diameter of the bump electrode are not particularly limited, but are preferably 10 to 400 μm, more preferably 50 to 300 μm, respectively. The bump pitch at that time is also not particularly limited, but is preferably 20 to 600 μm, and more preferably 100 to 500 μm.
The metal type constituting the bump electrode is not particularly limited, and examples thereof include solder, silver, gold, copper, tin, lead, bismuth, and alloys thereof. In the adhesive film 50, the bump electrode is a solder bump. It is preferably used in the case of. These metal species may be used alone or in combination of two or more.

(Step (B))
Next, the surface (also referred to as the back surface) opposite to the circuit forming surface 30A side of the electronic component 30 is back grinded.
Here, backgrinding means that the electronic component 30 is thinned to a predetermined thickness without being damaged.
For example, the structure 100 is fixed to a chuck table or the like of a grinder, and the back surface (circuit non-formed surface) of the electronic component 30 is ground.

In such a back surface grinding operation, the electronic component 30 is ground until the thickness becomes equal to or less than a desired thickness. The thickness of the electronic component 30 before grinding is appropriately determined by the diameter, type and the like of the electronic component 30, and the thickness of the electronic component 30 after grinding is appropriately determined by the size of the obtained chip, the type of circuit and the like.
Further, when the electronic component 30 is half-cut or the modified layer is formed by laser irradiation, the electronic component 30 is individualized by the step (B) as shown in FIG.

The back surface grinding method is not particularly limited, but a known grinding method can be adopted. Each grinding can be performed while cooling water by applying it to the electronic component 30 and the grindstone. If necessary, a dry polishing process, which is a grinding method that does not use grinding water, can be performed at the end of the grinding process. After the back surface grinding is completed, chemical etching is performed as necessary. Chemical etching adheres to an etching solution selected from the group consisting of an acidic aqueous solution consisting of a single or mixed solution of hydrofluoric acid, nitric acid, sulfuric acid, acetic acid, etc., an alkaline aqueous solution such as a potassium hydroxide aqueous solution, and a sodium hydroxide aqueous solution. This is performed by a method such as immersing the electronic component 30 in a state where the sex film 50 is attached. The etching is performed for the purpose of removing the strain generated on the back surface of the electronic component 30, further thinning the electronic component 30, removing the oxide film and the like, and pretreating when forming the electrode on the back surface. The etching solution is appropriately selected according to the above purpose.

(Process (C))
Next, after irradiating the adhesive film 50 with ultraviolet rays, the adhesive film 50 is removed from the electronic component 30. In the step (C), the adhesive resin layer 20 is cured by ultraviolet rays by irradiating the ^{adhesive film 50 with ultraviolet rays having a dose of, for example, 200 mJ / cm 2} or more and 2000 mJ / cm ^{2 or less.} After reducing the adhesive strength of the adhesive film 50, the adhesive film 50 is removed from the electronic component 30.
Further, the ultraviolet irradiation can be performed using, for example, an ultraviolet ray having a main wavelength of 365 nm using a high-pressure mercury lamp.
The irradiation intensity of ultraviolet rays is, for example, 50 mW / cm ² or more and 500 mW / cm ² or less.

Before removing the adhesive film from the electronic component 30, the electronic component 30 may be mounted on the dicing tape or the dicing tape with the die attach film. The operation of removing the adhesive film 50 from the electronic component 30 may be performed manually, but it can be performed by a device generally called an automatic peeling machine.
The surface of the electronic component 30 after the adhesive film 50 has been peeled off may be cleaned if necessary. Examples of the cleaning method include wet cleaning such as water cleaning and solvent cleaning, and dry cleaning such as plasma cleaning. In the case of wet cleaning, ultrasonic cleaning may be used in combination. These cleaning methods can be appropriately selected depending on the state of contamination of the surface of the electronic component 30.

(Other processes)
After performing the steps (A) to (C), a step of mounting the obtained semiconductor chip on a circuit board or the like may be further performed. These steps can be performed based on known information.

Although the preferred embodiments of the present invention have been described above, these are examples of the present invention, and various configurations other than the above can be adopted.

Hereinafter, the present invention will be specifically described with reference to Examples and Comparative Examples, but the present invention is not limited thereto.
Details regarding the production of the adhesive film are as follows.

<Base layer>
Base material layer 1: Polyethylene terephthalate film (manufactured by Toyobo Co., Ltd., product name: E7180, thickness: 50 μm, single-sided corona treated product)

Base material layer 2: Laminated film composed of low-density polyethylene film / polyethylene terephthalate film / low-density polyethylene film (total thickness: 110 μm)
^{A low-density polyethylene film (density: 0.925 kg / m 3} , thickness: 30 μm) was laminated on both sides of a polyethylene terephthalate film (manufactured by Toray Industries, Inc., product name: Lumirror S10, thickness: 50 μm). Corona treatment was performed on one side of the obtained laminated film.

Base material layer 3: Laminated film composed of polyethylene terephthalate film / ethylene / vinyl acetate copolymer film / acrylic film (total thickness: 145 μm)
Polyethylene terephthalate film (manufactured by Toyobo Co., Ltd., product name: E7180, thickness: 50 μm) and ethylene-vinyl acetate copolymer (manufactured by Mitsui / Dow Polychemical Co., Ltd., MFR: 2.5 g / 10 minutes) film (thickness: 70 μm) Was laminated by applying corona treatment to the bonded surface side of the ethylene-vinyl acetate copolymer film with the polyethylene terephthalate film. Further, the opposite side of the polyethylene terephthalate film of the ethylene-vinyl acetate copolymer film was also subjected to a corona discharge treatment.
Next, the following acrylic resin coating solution for a base material was coated and dried on the release surface of the release-treated polyethylene terephthalate film (separator) so as to have a dry thickness of 20 μm, and the above-mentioned polyethylene terephthalate film / It was bonded to a laminated film made of an ethylene / vinyl acetate copolymer film via an ethylene / vinyl acetate copolymer film and aged (40 ° C. for 3 days). Then, the separator was peeled off to obtain a base material layer 3.

<Acrylic resin coating liquid for base material>
Using 0.5 parts by mass of 4,4'-azobis-4-cyanovaleric acid (manufactured by Otsuka Chemical Co., Ltd., product name: ACVA) as a polymerization initiator, 74 parts by mass of butyl acrylate, 14 parts by mass of methyl methacrylate, 9 parts by mass of -2-hydroxyethyl methacrylate, 2 parts by mass of methacrylic acid, 1 part by mass of acrylamide, 3 parts by mass of an aqueous solution of polyoxyethylene nonylpropenylphenylphenyl ether ammonium sulfate (manufactured by Daiichi Kogyo Seiyaku Co., Ltd., product name: Aqualon HS-1025) The moiety was emulsion-polymerized in deionized water at 70 ° C. for 9 hours. After completion of the polymerization, the pH was adjusted to 7 with aqueous ammonia to obtain an acrylic polymer aqueous emulsion having a solid content concentration of 42.5%. Next, 100 parts by mass of this acrylic polymer aqueous emulsion was adjusted to ph = 9 or more by using aqueous ammonia, and 0.75 parts by mass of an aziridine-based cross-linking agent [Chemitite PZ-33, manufactured by Nippon Shokubai Kagaku Kogyo Co., Ltd.]. , And 5 parts by mass of diethylene glycol monobutyl ether were blended to obtain a coating liquid for a base material.

<(Meta) acrylic resin solution>
(Meta) Acrylic resin solution 1:
Toluene contains 49 parts by mass of ethyl acrylate, 20 parts by mass of -2-ethylhexyl acrylate, 21 parts by mass of methyl acrylate, 10 parts by mass of glycidyl methacrylate, and 0.5 parts by mass of a benzoyl peroxide-based polymerization initiator as a polymerization initiator. The reaction was carried out at 80 ° C. for 10 hours in 65 parts by mass and 50 parts by mass of ethyl acetate. After completion of the reaction, the obtained solution was cooled, 25 parts by mass of xylene, 5 parts by mass of acrylic acid, and 0.5 part by mass of tetradecyldimethylbenzylammonium chloride were added to the cooled solution, and 32 by mass of air was blown at 85 ° C. The reaction was carried out for a time to obtain a (meth) acrylic resin solution 1.

(Meta) Acrylic resin solution 2:
77 parts by mass of n-butyl acrylate, 16 parts by mass of methyl methacrylate, 16 parts by mass of 2-hydroxyethyl acrylate, and 0.3 parts by mass of t-butylperoxy-2-ethylhexanoate as a polymerization initiator. The reaction was carried out at 85 ° C. for 10 hours in 20 parts by mass of toluene and 80 parts by mass of ethyl acetate. After completion of the reaction, this solution is cooled, and 30 parts by mass of toluene, 7 parts by mass of methacryloyloxyethyl isocyanate (manufactured by Showa Denko, product name: Karens MOI), and 0.05 part by mass of dibutyltin dilaurylate are added to the solution, and air is added. Was reacted at 85 ° C. for 12 hours while blowing in to obtain a (meth) acrylic resin solution 2.

(Meta) Acrylic resin solution 3:
30 parts by mass of ethyl acrylate, 11 parts by mass of methyl acrylate, 26 parts by mass of -2-ethylhexyl acrylate, 7 parts by mass of 2-hydroxyethyl mecrylate, and 0.8 parts by mass of a benzoyl peroxide-based polymerization initiator as a polymerization initiator. The parts were reacted at 80 ° C. for 9 hours in 7 parts by mass of toluene and 50 parts by mass of ethyl acetate. After completion of the reaction, the obtained solution was cooled, and 25 parts by mass of toluene was added to the cooled solution to obtain a (meth) acrylic resin solution 3.

<Making an adhesive film>
By adding the additives shown in Table 1 to the acrylic resin solution, a pressure-sensitive adhesive coating liquid for the pressure-sensitive adhesive resin layer was prepared. This coating liquid was applied to a polyethylene terephthalate film (separator) that had been subjected to a silicone mold release treatment. Then, it was dried at 120 ° C. for 3 minutes to form an adhesive resin layer having a thickness of 20 μm, which was attached to the base material layer. The base material layers 1 and 2 were bonded to the corona-treated surface. For the base material layer 3, the separator was peeled off and bonded to the acrylic layer side. The obtained laminate was heated in an oven at 40 ° C. for 3 days to prepare an adhesive film.

<Evaluation method for adhesive film>
(1) 60 ° peel strength after UV curing A silicon mirror wafer (8-inch single-sided mirror wafer) was cut into a size of 50 mm × 100 mm. The mirror surface of the wafer was cleaned with ozone by a UV ozone cleaning device (UV-208 manufactured by Technovision Co., Ltd.) (ozone treatment time: 60 seconds). Then, the wafer mirror surface was wiped off with ethanol to obtain an adherend wafer.
In an environment of 23 ° C. and 50% RH, the adhesive film is cut into a width of 25 mm, the separator is peeled off, and the adhesive film is attached to the mirror surface of the adherend wafer via the adhesive resin layer using a hand roller. It was left for 1 hour. After being left to stand, the adhesive film was irradiated with ultraviolet rays having a main wavelength of 365 nm at an irradiation intensity of 100 mW / cm ² using a high-pressure mercury lamp, and an ultraviolet ray amount of 1080 mJ / cm ² was applied to the adhesive film. Then, the adherend wafer to which the adhesive film was attached was fixed to an adhesive / film peeling analyzer (VPA-2S, manufactured by Kyowa Interface Science Co., Ltd.), and one end of the adhesive film was fixed to the load cell side with cellophane tape. The adhesive film was peeled from the surface of the adherend wafer at a peeling angle of 60 ° and a peeling speed of 150 mm / min, and the 60 ° peeling strength after UV irradiation was obtained from the stress at that time. The evaluation was carried out at N = 2, and the values were averaged to obtain the measured value.

(2) 180 ° peel strength evaluation Adhesive wafer:
The mirror surface of the silicon mirror wafer (4-inch single-sided mirror wafer) was ozone-cleaned with a UV ozone cleaning device (UV-208, manufactured by Technovision Co., Ltd.) (ozone treatment time: 60 seconds). Then, the wafer mirror surface was wiped off with ethanol to obtain an adherend wafer.
Peeling strength before UV irradiation:
In an environment of 23 ° C. and 50% RH, the adhesive film is cut into a width of 50 mm, the separator is peeled off, and the adhesive film is attached to the mirror surface of the adherend wafer via the adhesive resin layer using a hand roller. It was left for 1 hour. After leaving it to stand, a tensile tester (Shimadzu Corporation, product name: Autograph AGS-X) is used to pinch one end of the adhesive film, and the peeling angle is 180 degrees and the peeling speed is 300 mm / min. The adhesive film was peeled off from the surface. The stress at that time was measured and converted to N / 25 mm to determine the peel strength. The evaluation was carried out at N = 2, and the values were averaged to obtain the measured value.
Peeling strength after UV irradiation: Under an environment of 23 ° C. and 50% RH, the adhesive film is cut to a width of 50 mm, the separator is peeled off, and the adhesive film is adhered via the adhesive resin layer using a hand roller. It was attached to the mirror surface of the body wafer and left for 1 hour. After being left to stand, the adhesive film was irradiated with ultraviolet rays having a main wavelength of 365 nm at an irradiation intensity of 100 mW / cm ² and an ultraviolet amount of 1080 mJ / cm ² under an environment of 25 ° C. using a high-pressure mercury lamp. After that, using a tensile tester (Shimadzu Corporation, product name: Autograph AGS-X), one end of the adhesive film was sandwiched, and the peeling angle: 180 degrees and the peeling speed: 300 mm / min on the surface of the adherend wafer. Peel off the adhesive film from. The stress at that time was measured and converted to N / 25 mm to determine the peel strength. The evaluation was carried out at N = 2, and the values were averaged to obtain the measured value.

Adhesive residue evaluation:
The adherend wafer after the peeling was visually observed and evaluated according to the following criteria.
〇 (Good): No glue residue confirmed × (Bad): No glue residue confirmed

(3) First dicing method evaluation Evaluation wafer 1:
Using a dicing saw, the mirror surface of a mirror wafer (8-inch mirror wafer, diameter: 200 ± 0.5 mm, thickness: 725 ± 50 μm, single-sided mirror) was half-cut to obtain an evaluation wafer 1. (Blade: ZH05-SD3500-N1-70-DD, chip size: 5 mm × 8 mm, cutting depth: 58 μm, blade rotation speed: 30,000 rpm). When the evaluation wafer 1 was observed with an optical microscope, the calf width was 35 μm.

Evaluation wafer 2:
Using a dicing saw, a first-step half-cut was performed on the mirror surface of a mirror wafer (8-inch mirror wafer, diameter: 200 ± 0.5 mm, thickness: 725 ± 50 μm, single-sided mirror) (blade: Z09-SD2000). -Y1 58 x 0.25A x 40 x 45E-L, chip size: 5 mm x 8 mm, depth of cut: 15 μm, blade rotation speed: 30,000 rpm). When observed with an optical microscope, the calf width was 60 μm. Subsequently, a second half cut was performed (blade: ZH05-SD3500-N1-70-DD, chip size: 5 mm × 8 mm, cutting depth: 58 μm, blade rotation speed: 30,000 rpm), and the evaluation wafer 2 was obtained. rice field.

First dicing method:
An adhesive film was attached to the half-cut surface of the evaluation wafer using a tape laminator (manufactured by Nitto Denko KK, DR3000II) (23 ° C., application speed: 5 mm / min, application pressure: 0.36 MPa).
Subsequently, the wafer was back-ground (roughing and precision-grinding, precision-grinding amount: 40 μm, no polishing, post-grinding thickness: 38 μm) using a grinding machine (DGP8760, manufactured by DISCO) to make individual pieces.
Chip skipping during pre-dicing was visually evaluated according to the following criteria after backside grinding.
〇 (Good): Chip skipping was not confirmed including the triangular corner part × (Bad): Chip skipping was confirmed including the triangular corner part

Further, ultraviolet irradiation and peeling of the adhesive film were performed, and the adhesive residue after the pre-dicing method was evaluated.
In the ultraviolet irradiation, an ultraviolet ray having a main wavelength of 365 nm was irradiated with an irradiation intensity of 100 mW / cm ² using a high-pressure mercury lamp in an environment of 25 ° C., and the adhesive film was irradiated with an ultraviolet ray amount of 1080 mJ / cm ^2.
The adhesive film was peeled off by the following procedure. First, using a wafer mounter (MSA300 manufactured by Nitto Denko Corporation), a dicing tape (used as a mounting tape) prepared separately is passed through the adhesive surface of the dicing tape to form an 8-inch wafer ring frame and the above-mentioned individual pieces. It was attached to the wafer side of the diced wafer. Subsequently, the adhesive film was peeled from the wafer notch portion by a peeling tape (PET38REL manufactured by Lasting System Co., Ltd.) using a tape peeling machine (HR3000III manufactured by Nitto Denko Corporation). The device peelability was evaluated according to the following criteria.
〇 (Good): The adhesive film could be peeled off from the wafer at the first time × (Bad): The adhesive film could not be peeled off from the wafer at the first time

The adhesive residue on the individualized wafer after the pre-dicing method was evaluated using an optical microscope (manufactured by Olympus Corporation) according to the following criteria.
〇 (Good): No glue residue confirmed × (Bad): No glue residue confirmed

[Example 1]
6.9 parts by mass of 2,2-dimethoxy-2-phenylacetophenone (manufactured by IGM, trade name: Omnirad 651) as a photoinitiator with respect to 100 parts by mass of (meth) acrylic resin solution 1 (solid content). 0.93 parts by mass of an isocyanate-based cross-linking agent (manufactured by Mitsui Chemicals, Inc., trade name: Olestar P49-75S) was added to obtain a pressure-sensitive adhesive coating liquid 1 for a pressure-sensitive adhesive resin layer. An adhesive film was produced by the above method. Further, based on the evaluation method described above, 60 ° peel strength evaluation, 180 ° peel strength evaluation and pre-dicing method evaluation after UV curing were carried out. The results are shown in Table 1.

[Examples 2 to 9 and Comparative Examples 1 and 2]
Adhesive films were prepared in the same manner as in Example 1 except that the types of the adhesive resin layer and the base material layer were changed to those shown in Table 1. Moreover, each evaluation was performed in the same manner as in Example 1. The obtained results are shown in Table 1, respectively.
The compounds listed in Table 1 are as follows.
Omnirad 651 (manufactured by IGM): 2,2-dimethoxy-2-phenylacetophenone Omnirad 369 (manufactured by IGM): 2-benzyl-2-dimethylamino-4'-morpholinobtyrophenone Aronix M400 (manufactured by Toa Synthetic Co., Ltd.): Mixture of dipentaerythritol pentaacrylate and dipentaerythritol hexaacrylate NK ester AD-TMP (manufactured by Shin Nakamura Chemical Industry Co., Ltd.): Ditrimethylol propanetetraacrylate

This application claims priority based on Japanese application Japanese Patent Application No. 2020-125478 filed on July 22, 2020, and incorporates all of its disclosures here.

10 Base material layer 20 Adhesive resin layer 30 Electronic components 30A Circuit forming surface 50 Adhesive film 100 Structure

Claims

A step (A) of preparing a structure including an electronic component having a circuit forming surface and an adhesive film bonded to the circuit forming surface side of the electronic component.
The step (B) of backgrinding the surface of the electronic component opposite to the circuit forming surface side, and
A step (C) of removing the adhesive film from the electronic component after irradiating the adhesive film with ultraviolet rays.
A method of manufacturing an electronic device that includes at least
The adhesive film comprises a base material layer and an ultraviolet curable adhesive resin layer provided on one surface side of the base material layer.
A method for manufacturing an electronic device, which is measured by the following method and has a 60 ° peel strength of the adhesive film after irradiation with ultraviolet rays of 0.4 N / 25 mm or more and 5.0 N / 25 mm or less.
(Method)
The adhesive film is attached to the silicon mirror wafer so that the adhesive resin layer is in contact with the silicon mirror wafer. Next, the adhesive film is irradiated with ultraviolet rays having a main wavelength of 365 nm under an environment of 25 ° C. with an irradiation intensity of 100 mW / cm 2 and an ultraviolet amount of 1080 mJ / cm 2 to irradiate the adhesive resin layer with ultraviolet rays. Cure. Next, using a tensile tester, the adhesive film was peeled from the silicon mirror wafer in the 60 ° direction at 23 ° C. and a speed of 150 mm / min, and the strength (N / 25 mm) at that time was peeled off by 60 °. Let it be strength.
In the method for manufacturing an electronic device according to claim 1,
The step (A) is
At least one step (A1-2) selected from a step of half-cutting the electronic component (A1-1) and a step of irradiating the electronic component with a laser to form a modified layer on the electronic component (A1-2). A1) and
After the step (A1), a step (A2) of attaching the adhesive film to the circuit forming surface side of the electronic component,
A method of manufacturing an electronic device including.
In the method for manufacturing an electronic device according to claim 1 or 2.
In the step (C), the adhesive resin layer is cured by ultraviolet rays by irradiating the adhesive film with ultraviolet rays having a dose of 200 mJ / cm 2 or more and 2000 mJ / cm 2 or less to cure the adhesive resin layer. A method for manufacturing an electronic device that removes the adhesive film from the electronic component after reducing the adhesive strength.
In the method for manufacturing an electronic device according to any one of claims 1 to 3.
A method for producing an electronic device, wherein the adhesive resin layer contains a (meth) acrylic resin having a polymerizable carbon-carbon double bond in the molecule and a photoinitiator.
In the method for manufacturing an electronic device according to any one of claims 1 to 4.
A method for manufacturing an electronic device in which the thickness of the adhesive resin layer is 5 μm or more and 300 μm or less.
In the method for manufacturing an electronic device according to any one of claims 1 to 5.
The resins constituting the base material layer are polyolefin, polyester, polyamide, polyacrylate, polymethacrylate, polyvinyl chloride, polyvinylidene chloride, polyimide, polyetherimide, ethylene / vinyl acetate copolymer, polyacrylonitrile, polycarbonate, polystyrene. , A method for producing an electronic device comprising one or more selected from ionomer, polysulfone, polyethersulfone and polyphenylene ether.