CN116157481A - Method for manufacturing electronic device - Google Patents
Method for manufacturing electronic device Download PDFInfo
- Publication number
- CN116157481A CN116157481A CN202180060071.9A CN202180060071A CN116157481A CN 116157481 A CN116157481 A CN 116157481A CN 202180060071 A CN202180060071 A CN 202180060071A CN 116157481 A CN116157481 A CN 116157481A
- Authority
- CN
- China
- Prior art keywords
- adhesive film
- electronic component
- adhesive
- resin layer
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 81
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 37
- 239000002313 adhesive film Substances 0.000 claims abstract description 116
- 239000004840 adhesive resin Substances 0.000 claims abstract description 53
- 229920006223 adhesive resin Polymers 0.000 claims abstract description 53
- 238000000227 grinding Methods 0.000 claims abstract description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 19
- 239000010703 silicon Substances 0.000 claims abstract description 19
- 230000001678 irradiating effect Effects 0.000 claims abstract description 12
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052753 mercury Inorganic materials 0.000 claims abstract description 9
- 239000000853 adhesive Substances 0.000 claims description 32
- 230000001070 adhesive effect Effects 0.000 claims description 32
- 239000004925 Acrylic resin Substances 0.000 claims description 24
- 229920000178 Acrylic resin Polymers 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 17
- 239000011203 carbon fibre reinforced carbon Substances 0.000 claims description 10
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 claims description 10
- 229920005989 resin Polymers 0.000 claims description 10
- 239000011347 resin Substances 0.000 claims description 10
- 239000005038 ethylene vinyl acetate Substances 0.000 claims description 9
- 238000005520 cutting process Methods 0.000 claims description 7
- 229920000058 polyacrylate Polymers 0.000 claims description 5
- 239000004952 Polyamide Substances 0.000 claims description 4
- 239000004642 Polyimide Substances 0.000 claims description 4
- 229920002647 polyamide Polymers 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 239000004695 Polyether sulfone Substances 0.000 claims description 3
- 239000004697 Polyetherimide Substances 0.000 claims description 3
- 239000004793 Polystyrene Substances 0.000 claims description 3
- 229920001328 Polyvinylidene chloride Polymers 0.000 claims description 3
- 229920000554 ionomer Polymers 0.000 claims description 3
- 229920002492 poly(sulfone) Polymers 0.000 claims description 3
- 229920002239 polyacrylonitrile Polymers 0.000 claims description 3
- 229920000515 polycarbonate Polymers 0.000 claims description 3
- 239000004417 polycarbonate Substances 0.000 claims description 3
- 229920000728 polyester Polymers 0.000 claims description 3
- 229920006393 polyether sulfone Polymers 0.000 claims description 3
- 229920001601 polyetherimide Polymers 0.000 claims description 3
- 229920000098 polyolefin Polymers 0.000 claims description 3
- 229920002223 polystyrene Polymers 0.000 claims description 3
- 229920000915 polyvinyl chloride Polymers 0.000 claims description 3
- 239000004800 polyvinyl chloride Substances 0.000 claims description 3
- 239000005033 polyvinylidene chloride Substances 0.000 claims description 3
- 239000004721 Polyphenylene oxide Substances 0.000 claims description 2
- 229920000193 polymethacrylate Polymers 0.000 claims description 2
- 229920006380 polyphenylene oxide Polymers 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 10
- 239000010410 layer Substances 0.000 description 87
- 235000012431 wafers Nutrition 0.000 description 73
- -1 polyethylene Polymers 0.000 description 30
- 239000000178 monomer Substances 0.000 description 20
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 19
- 125000000524 functional group Chemical group 0.000 description 17
- 238000011156 evaluation Methods 0.000 description 16
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 15
- 239000000243 solution Substances 0.000 description 15
- 238000000576 coating method Methods 0.000 description 14
- 229920000139 polyethylene terephthalate Polymers 0.000 description 14
- 239000005020 polyethylene terephthalate Substances 0.000 description 14
- 239000011248 coating agent Substances 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 13
- 238000005406 washing Methods 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 11
- 239000003431 cross linking reagent Substances 0.000 description 10
- 239000007788 liquid Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 9
- 239000003292 glue Substances 0.000 description 9
- 239000012790 adhesive layer Substances 0.000 description 8
- 238000004132 cross linking Methods 0.000 description 8
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 6
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 6
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 6
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 6
- 239000003505 polymerization initiator Substances 0.000 description 6
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 5
- 239000003522 acrylic cement Substances 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 5
- 239000000839 emulsion Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 4
- 229920001577 copolymer Polymers 0.000 description 4
- 238000003851 corona treatment Methods 0.000 description 4
- 238000001723 curing Methods 0.000 description 4
- KWVGIHKZDCUPEU-UHFFFAOYSA-N 2,2-dimethoxy-2-phenylacetophenone Chemical compound C=1C=CC=CC=1C(OC)(OC)C(=O)C1=CC=CC=C1 KWVGIHKZDCUPEU-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 3
- 238000007259 addition reaction Methods 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229920001684 low density polyethylene Polymers 0.000 description 3
- 239000004702 low-density polyethylene Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229940059574 pentaerithrityl Drugs 0.000 description 3
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 3
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 3
- 239000011112 polyethylene naphthalate Substances 0.000 description 3
- 150000003384 small molecules Chemical class 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 2
- GOXQRTZXKQZDDN-UHFFFAOYSA-N 2-Ethylhexyl acrylate Chemical compound CCCCC(CC)COC(=O)C=C GOXQRTZXKQZDDN-UHFFFAOYSA-N 0.000 description 2
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 2
- VVBLNCFGVYUYGU-UHFFFAOYSA-N 4,4'-Bis(dimethylamino)benzophenone Chemical compound C1=CC(N(C)C)=CC=C1C(=O)C1=CC=C(N(C)C)C=C1 VVBLNCFGVYUYGU-UHFFFAOYSA-N 0.000 description 2
- VFXXTYGQYWRHJP-UHFFFAOYSA-N 4,4'-azobis(4-cyanopentanoic acid) Chemical compound OC(=O)CCC(C)(C#N)N=NC(C)(CCC(O)=O)C#N VFXXTYGQYWRHJP-UHFFFAOYSA-N 0.000 description 2
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- 239000004342 Benzoyl peroxide Substances 0.000 description 2
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- JIGUQPWFLRLWPJ-UHFFFAOYSA-N Ethyl acrylate Chemical compound CCOC(=O)C=C JIGUQPWFLRLWPJ-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 2
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical class OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 2
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 2
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 2
- XRMBQHTWUBGQDN-UHFFFAOYSA-N [2-[2,2-bis(prop-2-enoyloxymethyl)butoxymethyl]-2-(prop-2-enoyloxymethyl)butyl] prop-2-enoate Chemical compound C=CC(=O)OCC(COC(=O)C=C)(CC)COCC(CC)(COC(=O)C=C)COC(=O)C=C XRMBQHTWUBGQDN-UHFFFAOYSA-N 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical compound C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 2
- 235000019400 benzoyl peroxide Nutrition 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000006482 condensation reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 239000012948 isocyanate Substances 0.000 description 2
- 239000005001 laminate film Substances 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 229920001707 polybutylene terephthalate Polymers 0.000 description 2
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- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 2
- FVQMJJQUGGVLEP-UHFFFAOYSA-N (2-methylpropan-2-yl)oxy 2-ethylhexaneperoxoate Chemical compound CCCCC(CC)C(=O)OOOC(C)(C)C FVQMJJQUGGVLEP-UHFFFAOYSA-N 0.000 description 1
- BWZAUXRKSMJLMH-UHFFFAOYSA-N 1,1-diethoxyethylbenzene Chemical compound CCOC(C)(OCC)C1=CC=CC=C1 BWZAUXRKSMJLMH-UHFFFAOYSA-N 0.000 description 1
- GJZFGDYLJLCGHT-UHFFFAOYSA-N 1,2-diethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=C(CC)C(CC)=CC=C3SC2=C1 GJZFGDYLJLCGHT-UHFFFAOYSA-N 0.000 description 1
- UYEDESPZQLZMCL-UHFFFAOYSA-N 1,2-dimethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=C(C)C(C)=CC=C3SC2=C1 UYEDESPZQLZMCL-UHFFFAOYSA-N 0.000 description 1
- OVBFMUAFNIIQAL-UHFFFAOYSA-N 1,4-diisocyanatobutane Chemical compound O=C=NCCCCN=C=O OVBFMUAFNIIQAL-UHFFFAOYSA-N 0.000 description 1
- YNSNJGRCQCDRDM-UHFFFAOYSA-N 1-chlorothioxanthen-9-one Chemical compound S1C2=CC=CC=C2C(=O)C2=C1C=CC=C2Cl YNSNJGRCQCDRDM-UHFFFAOYSA-N 0.000 description 1
- CTOHEPRICOKHIV-UHFFFAOYSA-N 1-dodecylthioxanthen-9-one Chemical compound S1C2=CC=CC=C2C(=O)C2=C1C=CC=C2CCCCCCCCCCCC CTOHEPRICOKHIV-UHFFFAOYSA-N 0.000 description 1
- 239000012956 1-hydroxycyclohexylphenyl-ketone Substances 0.000 description 1
- GZBSIABKXVPBFY-UHFFFAOYSA-N 2,2-bis(hydroxymethyl)propane-1,3-diol;prop-2-enoic acid Chemical compound OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OCC(CO)(CO)CO GZBSIABKXVPBFY-UHFFFAOYSA-N 0.000 description 1
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 1
- PUBNJSZGANKUGX-UHFFFAOYSA-N 2-(dimethylamino)-2-[(4-methylphenyl)methyl]-1-(4-morpholin-4-ylphenyl)butan-1-one Chemical compound C=1C=C(N2CCOCC2)C=CC=1C(=O)C(CC)(N(C)C)CC1=CC=C(C)C=C1 PUBNJSZGANKUGX-UHFFFAOYSA-N 0.000 description 1
- LCZVSXRMYJUNFX-UHFFFAOYSA-N 2-[2-(2-hydroxypropoxy)propoxy]propan-1-ol Chemical compound CC(O)COC(C)COC(C)CO LCZVSXRMYJUNFX-UHFFFAOYSA-N 0.000 description 1
- FDSUVTROAWLVJA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol;prop-2-enoic acid Chemical compound OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OCC(CO)(CO)COCC(CO)(CO)CO FDSUVTROAWLVJA-UHFFFAOYSA-N 0.000 description 1
- WVRHNZGZWMKMNE-UHFFFAOYSA-N 2-hydroxy-1-[2-(2-methylpropyl)phenyl]-2-phenylethanone Chemical compound CC(C)CC1=CC=CC=C1C(=O)C(O)C1=CC=CC=C1 WVRHNZGZWMKMNE-UHFFFAOYSA-N 0.000 description 1
- XMLYCEVDHLAQEL-UHFFFAOYSA-N 2-hydroxy-2-methyl-1-phenylpropan-1-one Chemical compound CC(C)(O)C(=O)C1=CC=CC=C1 XMLYCEVDHLAQEL-UHFFFAOYSA-N 0.000 description 1
- NACPTFCBIGBTSJ-UHFFFAOYSA-N 2-hydroxy-2-phenyl-1-(2-propan-2-ylphenyl)ethanone Chemical compound CC(C)C1=CC=CC=C1C(=O)C(O)C1=CC=CC=C1 NACPTFCBIGBTSJ-UHFFFAOYSA-N 0.000 description 1
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 1
- OMIGHNLMNHATMP-UHFFFAOYSA-N 2-hydroxyethyl prop-2-enoate Chemical compound OCCOC(=O)C=C OMIGHNLMNHATMP-UHFFFAOYSA-N 0.000 description 1
- DPNXHTDWGGVXID-UHFFFAOYSA-N 2-isocyanatoethyl prop-2-enoate Chemical compound C=CC(=O)OCCN=C=O DPNXHTDWGGVXID-UHFFFAOYSA-N 0.000 description 1
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- NOWKCMXCCJGMRR-UHFFFAOYSA-N Aziridine Chemical compound C1CN1 NOWKCMXCCJGMRR-UHFFFAOYSA-N 0.000 description 1
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- 244000028419 Styrax benzoin Species 0.000 description 1
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- 235000008411 Sumatra benzointree Nutrition 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- MPIAGWXWVAHQBB-UHFFFAOYSA-N [3-prop-2-enoyloxy-2-[[3-prop-2-enoyloxy-2,2-bis(prop-2-enoyloxymethyl)propoxy]methyl]-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(COC(=O)C=C)(COC(=O)C=C)COCC(COC(=O)C=C)(COC(=O)C=C)COC(=O)C=C MPIAGWXWVAHQBB-UHFFFAOYSA-N 0.000 description 1
- UKLDJPRMSDWDSL-UHFFFAOYSA-L [dibutyl(dodecanoyloxy)stannyl] dodecanoate Chemical compound CCCCCCCCCCCC(=O)O[Sn](CCCC)(CCCC)OC(=O)CCCCCCCCCCC UKLDJPRMSDWDSL-UHFFFAOYSA-L 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
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- 125000005250 alkyl acrylate group Chemical group 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
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- 238000004458 analytical method Methods 0.000 description 1
- RBFDCQDDCJFGIK-UHFFFAOYSA-N arsenic germanium Chemical compound [Ge].[As] RBFDCQDDCJFGIK-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- FFBZKUHRIXKOSY-UHFFFAOYSA-N aziridine-1-carboxamide Chemical compound NC(=O)N1CC1 FFBZKUHRIXKOSY-UHFFFAOYSA-N 0.000 description 1
- 150000001541 aziridines Chemical class 0.000 description 1
- 125000004069 aziridinyl group Chemical group 0.000 description 1
- 229920005601 base polymer Polymers 0.000 description 1
- 229960002130 benzoin Drugs 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- OCBHHZMJRVXXQK-UHFFFAOYSA-M benzyl-dimethyl-tetradecylazanium;chloride Chemical compound [Cl-].CCCCCCCCCCCCCC[N+](C)(C)CC1=CC=CC=C1 OCBHHZMJRVXXQK-UHFFFAOYSA-M 0.000 description 1
- MQDJYUACMFCOFT-UHFFFAOYSA-N bis[2-(1-hydroxycyclohexyl)phenyl]methanone Chemical compound C=1C=CC=C(C(=O)C=2C(=CC=CC=2)C2(O)CCCCC2)C=1C1(O)CCCCC1 MQDJYUACMFCOFT-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 210000001124 body fluid Anatomy 0.000 description 1
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- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 239000012975 dibutyltin dilaurate Substances 0.000 description 1
- 238000007607 die coating method Methods 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 235000019382 gum benzoic Nutrition 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- RRAMGCGOFNQTLD-UHFFFAOYSA-N hexamethylene diisocyanate Chemical compound O=C=NCCCCCCN=C=O RRAMGCGOFNQTLD-UHFFFAOYSA-N 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 239000012943 hotmelt Substances 0.000 description 1
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- RBQRWNWVPQDTJJ-UHFFFAOYSA-N methacryloyloxyethyl isocyanate Chemical compound CC(=C)C(=O)OCCN=C=O RBQRWNWVPQDTJJ-UHFFFAOYSA-N 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- YVOQADGLLJCMOE-UHFFFAOYSA-N n-[6-(aziridine-1-carbonylamino)hexyl]aziridine-1-carboxamide Chemical compound C1CN1C(=O)NCCCCCCNC(=O)N1CC1 YVOQADGLLJCMOE-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920001748 polybutylene Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001228 polyisocyanate Polymers 0.000 description 1
- 239000005056 polyisocyanate Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000011116 polymethylpentene Substances 0.000 description 1
- 229920000306 polymethylpentene Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000003847 radiation curing Methods 0.000 description 1
- 238000007763 reverse roll coating Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000013464 silicone adhesive Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 239000000600 sorbitol Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 235000013618 yogurt Nutrition 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/38—Pressure-sensitive adhesives [PSA]
- C09J7/381—Pressure-sensitive adhesives [PSA] based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
- C09J7/385—Acrylic polymers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/06—Non-macromolecular additives organic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
- C09J133/04—Homopolymers or copolymers of esters
- C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/38—Pressure-sensitive adhesives [PSA]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
- C09J2301/416—Additional features of adhesives in the form of films or foils characterized by the presence of essential components use of irradiation
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/50—Additional features of adhesives in the form of films or foils characterized by process specific features
- C09J2301/502—Additional features of adhesives in the form of films or foils characterized by process specific features process for debonding adherents
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Adhesive Tapes (AREA)
Abstract
A method for manufacturing an electronic device includes at least the steps of: a step (A) of preparing a structure (100), wherein the structure (100) is provided with an electronic component (30) having a circuit formation surface (30A) and an adhesive film (50) attached to the circuit formation surface (30A) side of the electronic component (30); a step (B) of back-grinding the surface of the electronic component (30) on the opposite side of the circuit-forming surface (30A); and a step (C) in which the adhesive film (50) is irradiated with ultraviolet light and then the adhesive film (50) is removed from the electronic component (30), wherein the adhesive film (50) comprises a base layer (10) and an ultraviolet-curable adhesive resin layer (20) provided on one surface side of the base layer (10), and the adhesive film (50) after irradiation with ultraviolet light has a 60 DEG peel strength of 0.4N/25mm to 5.0N/25mm, as measured by the following method. (method) in such a manner that the adhesive resin layer (20) is in contact with the silicon mirror waferAn adhesive film (50) is adhered to the silicon mirror wafer. Next, the adhesive resin layer (20) was irradiated with an intensity of 100mW/cm using a high-pressure mercury lamp at 25 ℃ 2 Irradiating ultraviolet ray of 1080mJ/cm 2 Ultraviolet rays having a dominant wavelength of 365nm, and curing the adhesive resin layer (20) by ultraviolet rays. Then, the adhesive film (50) was peeled off from the silicon mirror wafer in the 60℃direction at a temperature of 23℃and a speed of 150 mm/min by using a tensile tester, and the strength (N/25 mm) at this time was set to 60℃peel strength.
Description
Technical Field
The present invention relates to a method for manufacturing an electronic device.
Background
In the manufacturing process of the electronic device, in the process of grinding the electronic component, an adhesive film is stuck on the circuit forming surface of the electronic component in order to fix the electronic component or prevent damage of the electronic component.
As such an adhesive film, a film in which an adhesive resin layer is laminated on a base film is generally used.
With the progress of high-density mounting technology, electronic components such as semiconductor wafers are required to be thinned, and for example, thin electronic components are required to be processed to a thickness of 50 μm or less.
As one of such thin-thickness processing, there is a cutting method, that is: before grinding of the electronic component, grooves of a predetermined depth are formed on the surface of the electronic component, followed by grinding, whereby the electronic component is singulated. In addition, there are also prior stealth methods, namely: before the grinding process, the inside of the electronic component is irradiated with laser light to form a modified region, and then grinding is performed to singulate the electronic component.
Examples of the techniques related to the adhesive film for the pre-dicing method and the pre-concealing method include those described in patent document 1 (japanese patent application laid-open publication No. 2014-75560) and patent document 2 (japanese patent application laid-open publication No. 2016-72546).
Patent document 1 describes a surface-protecting sheet having an adhesive layer on a base material, which satisfies the following requirements (a) to (d).
(a) The Young's modulus of the base material is 450MPa or more;
(b) The adhesive layer has a storage modulus at 25 ℃ of 0.10MPa or more;
(c) The adhesive layer has a storage modulus at 50 ℃ of 0.20MPa or less;
(d) The thickness of the adhesive layer is 30 μm or more.
Patent document 1 describes: such a surface protective sheet can prevent water from entering the protected surface of the workpiece (slag entering) from a gap formed by cutting the workpiece during the back grinding process of the workpiece, and prevent contamination of the protected surface of the workpiece.
Patent document 2 describes an adhesive tape for protecting the surface of a semiconductor wafer, which is characterized by comprising a base resin film and a radiation-curable adhesive layer formed on at least one side of the base resin film, wherein the base resin film has at least one rigid layer having a tensile elastic modulus of 1 to 10GPa, and the adhesive layer has a peel force of 0.1 to 3.0N/25mm at a peel angle of 30 ° after radiation curing.
Patent document 2 describes that: according to such an adhesive tape for protecting the surface of a semiconductor wafer, in the back grinding step of the semiconductor wafer to which the dicing-before-first method or the stealth-before-first method is applied, the semiconductor wafer can be processed without breakage or contamination while suppressing the scratch movement (kerf shift) of the singulated semiconductor chips.
Prior art literature
Patent literature
Patent document 1: japanese patent application laid-open No. 2014-75560
Patent document 2: japanese patent laid-open publication 2016-72546
Disclosure of Invention
Problems to be solved by the invention
According to the studies by the present inventors, it has been revealed that, for example, in a process for manufacturing an electronic device using a dicing-first method, a stealth-first method, or the like, when the adhesive film is peeled from the electronic component after the back grinding step, a residual adhesive is likely to be generated on the electronic component side.
The present invention has been made in view of the above circumstances, and provides a method for manufacturing an electronic device capable of suppressing the residual adhesive on the electronic component side when the adhesive film is peeled from the electronic component after the back grinding step.
Means for solving the problems
The present inventors have conducted intensive studies to achieve the above object. The result shows that: by adjusting the 60 ° peel strength of the adhesive film after irradiation with ultraviolet light to a specific range, it is possible to suppress the residual adhesive on the electronic component side when the adhesive film is peeled from the electronic component after the back grinding step, thereby completing the present invention.
According to the present invention, a method of manufacturing an electronic device is provided as follows.
[1]
A method for manufacturing an electronic device includes at least the steps of:
A step (A) of preparing a structure having an electronic component having a circuit-forming surface and an adhesive film bonded to the circuit-forming surface side of the electronic component,
a step (B) of back-grinding a surface of the electronic component opposite to the circuit-forming surface side, and
a step (C) of irradiating the adhesive film with ultraviolet light, and then removing the adhesive film from the electronic component,
the adhesive film comprises a base layer and an ultraviolet-curable adhesive resin layer provided on one surface side of the base layer,
the adhesive film has a 60 DEG peel strength of 0.4N/25mm or less and 5.0N/25mm or less after irradiation with ultraviolet light, which is measured by the following method.
(method)
The adhesive resin layer is contacted with the silicon mirror waferThe film is adhered to the silicon mirror wafer. Next, the adhesive film was irradiated with a high-pressure mercury lamp at an intensity of 100mW/cm at 25 ℃ 2 Irradiating ultraviolet ray of 1080mJ/cm 2 The adhesive resin layer is cured by ultraviolet rays having a dominant wavelength of 365 nm. Then, the adhesive film was peeled off from the silicon mirror wafer in the 60 ° direction at a temperature of 23 ℃ and a speed of 150 mm/min by using a tensile tester, and the strength (N/25 mm) at this time was set to 60 ° peel strength.
[2]
The method for manufacturing an electronic device according to the above [1],
the step (a) includes the steps of:
a step (A1) selected from at least one of a step (A1-1) of half-cutting the electronic component and a step (A1-2) of irradiating the electronic component with laser light to form a modified layer on the electronic component;
and (A2) adhering the adhesive film to the circuit-forming surface side of the electronic component after the step (A1).
[3]
The method for manufacturing an electronic device according to the above [1] or [2],
in the step (C), the adhesive film is irradiated with 200mJ/cm 2 Above 2000mJ/cm 2 The adhesive film is removed from the electronic component after the adhesive resin layer is cured by ultraviolet rays of the following dose to reduce the adhesive force of the adhesive resin layer.
[4]
The method for manufacturing an electronic device according to any one of the above [1] to [3],
the adhesive resin layer contains a (meth) acrylic resin having a polymerizable carbon-carbon double bond in a molecule and a photoinitiator.
[5]
The method for manufacturing an electronic device according to any one of the above [1] to [4],
the thickness of the adhesive resin layer is 5-300 μm.
[6]
The method for manufacturing an electronic device according to any one of the above [1] to [5],
the resin constituting the base layer contains one or more selected from the group consisting of polyolefin, polyester, polyamide, polyacrylate, polymethacrylate, polyvinyl chloride, polyvinylidene chloride, polyimide, polyetherimide, ethylene-vinyl acetate copolymer, polyacrylonitrile, polycarbonate, polystyrene, ionomer, polysulfone, polyethersulfone, and polyphenylene oxide.
Effects of the invention
According to the present invention, it is possible to provide a method for manufacturing an electronic device, which can suppress the residual adhesive on the electronic component side when the adhesive film is peeled from the electronic component after the back grinding step.
Drawings
Fig. 1 is a cross-sectional view schematically showing an example of the structure of an adhesive film according to an embodiment of the present invention.
Fig. 2 is a cross-sectional view schematically showing an example of a method for manufacturing an electronic device according to an embodiment of the present invention.
Detailed Description
Hereinafter, embodiments of the present invention will be described with reference to the drawings. In all the drawings, the same components are denoted by common reference numerals, and the description thereof is omitted as appropriate. The drawing is a schematic diagram, and does not match the actual size ratio. The term "A to B" in the numerical range means A or more and B or less unless otherwise specified. In the present embodiment, the term "(meth) acrylic acid" refers to acrylic acid, methacrylic acid, or both acrylic acid and methacrylic acid.
Fig. 1 is a cross-sectional view schematically showing an example of the structure of an adhesive film 50 according to an embodiment of the present invention. Fig. 2 is a cross-sectional view schematically showing an example of a method for manufacturing an electronic device according to an embodiment of the present invention.
The method for manufacturing an electronic device according to the present embodiment is a method for manufacturing an electronic device including at least the steps of: a step (a) of preparing a structure 100, wherein the structure 100 includes an electronic component 30 having a circuit formation surface 30A and an adhesive film 50 bonded to the circuit formation surface 30A side of the electronic component 30; a step (B) of back-grinding a surface of the electronic component 30 on the opposite side of the circuit forming surface 30A side; and a step (C) of irradiating the adhesive film 50 with ultraviolet light and then removing the adhesive film 50 from the electronic component 30; the adhesive film 50 includes a base layer 10 and an ultraviolet-curable adhesive resin layer 20 provided on one surface side of the base layer 10, and the adhesive film 50 has a 60 DEG peel strength of 0.4N/25mm to 5.0N/25mm after irradiation of ultraviolet rays (after ultraviolet curing) measured by the method described below.
(method) the adhesive film 50 is stuck to the silicon mirror wafer in such a manner that the adhesive resin layer 20 is in contact with the silicon mirror wafer. Next, the adhesive film 50 was irradiated with an irradiation intensity of 100mW/cm using a high-pressure mercury lamp at 25 ℃ 2 Irradiating ultraviolet ray of 1080mJ/cm 2 The adhesive resin layer 20 is ultraviolet cured by ultraviolet rays having a dominant wavelength of 365 nm. Then, the adhesive film 50 was peeled off from the silicon mirror wafer in the 60 ° direction at a temperature of 23 ℃ and a speed of 150 mm/min by using a tensile tester, and the strength (N/25 mm) at this time was set to 60 ° peel strength.
As described above, according to the studies by the present inventors, it has been revealed that, for example, in a process of manufacturing an electronic device using a dicing-first method, a stealth-first method, or the like, when the adhesive film 50 is peeled from the electronic component 30 after the back grinding step, a residual glue is likely to be generated on the electronic component 30 side.
The reason for this is not clear, but unlike the back grinding process of the usual electronic component 30, it is necessary to peel the adhesive film 50 from the cut electronic component 30, and therefore it is considered that the residual glue is easily generated at the edge portion of the cut electronic component 30.
The present inventors have conducted intensive studies to achieve the above object. As a result, it was first found that by adjusting the 60 ° peel strength of the adhesive film 50 after irradiation of ultraviolet light to a specific range, it is possible to suppress the residual adhesive on the electronic component 30 side when the adhesive film 50 is peeled from the electronic component 30 after the back grinding step.
In the method for manufacturing an electronic device according to the present embodiment, the 60 ° peel strength of the adhesive film 50 after irradiation of ultraviolet light measured by the above method is 0.4N/25mm or more and 5.0N/25mm or less, preferably 3.0N/25mm or less, more preferably 2.5N/25mm or less, from the viewpoint of preventing the adhesive residue on wafers in various surface states.
In the step (C), the 60 ° peel strength of the adhesive film 50 after irradiation of ultraviolet light can be controlled within the above range by controlling the types, blend ratios, and content ratios of the respective monomers in the adhesive resin, the crosslinking agent, and the photoinitiator constituting the adhesive resin layer 20, for example.
1. Adhesive film
As shown in fig. 1, the adhesive film 50 according to the present embodiment includes a base material layer 10 and an ultraviolet-curable adhesive resin layer 20 provided on one surface side of the base material layer 10.
The thickness of the adhesive film 50 according to the present embodiment is preferably 50 μm or more and 600 μm or less, more preferably 50 μm or more and 400 μm or less, and still more preferably 50 μm or more and 300 μm or less, from the viewpoint of balance between mechanical properties and handleability.
The adhesive film 50 according to the present embodiment may be provided with other layers such as a concavo-convex absorbent resin layer, an adhesive layer, and an antistatic layer (not shown) between the layers within a range that does not impair the effects of the present invention. The uneven absorbability of the adhesive film 50 can be improved by the uneven absorbability resin layer. According to the adhesive layer, the adhesion between the layers can be improved. In addition, according to the antistatic layer, the antistatic property of the adhesive film 50 can be improved.
Next, each layer constituting the adhesive film 50 according to the present embodiment will be described.
< substrate layer >)
The base material layer 10 is provided for the purpose of improving the handleability, mechanical properties, heat resistance, and other properties of the adhesive film 50.
The base material layer 10 is not particularly limited as long as it has mechanical strength capable of withstanding external force applied when the electronic component 30 is processed, and examples thereof include a resin film.
Examples of the resin constituting the base material layer 10 include polyolefin selected from polyethylene, polypropylene, poly (4-methyl-1-pentene), poly (1-butene) and the like; polyesters such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate; polyamides such as nylon-6, nylon-66, and polymetaphenylene diamine; (meth) acrylic resins; polyvinyl chloride; polyvinylidene chloride; polyimide; a polyetherimide; ethylene-vinyl acetate copolymers; polyacrylonitrile; a polycarbonate; a polystyrene; an ionomer; polysulfone; polyether sulfone; one or more of polyether ether ketone, etc.
Among them, from the viewpoint of improving mechanical properties and transparency, one or more selected from polypropylene, polyethylene terephthalate, polyethylene naphthalate, polyamide, polyimide, ethylene-vinyl acetate copolymer and polybutylene terephthalate is preferable, and one or more selected from polyethylene terephthalate and polyethylene naphthalate is more preferable.
The base material layer 10 may be a single layer or two or more layers.
The resin film used to form the base layer 10 may be a stretched film or a uniaxially or biaxially stretched film, but from the viewpoint of improving the mechanical strength of the base layer 10, a uniaxially or biaxially stretched film is preferable. From the viewpoint of suppressing warpage of the electronic component 30 after grinding, the base material layer 10 is preferably annealed in advance. The base material layer 10 may be subjected to a surface treatment for improving adhesion with other layers. Specifically, corona treatment, plasma treatment, undercoating (primer coat) treatment, primer coat treatment, and the like may be performed.
From the viewpoint of obtaining good film characteristics, the thickness of the base material layer 10 is preferably 20 μm to 250 μm, more preferably 30 μm to 200 μm, and even more preferably 50 μm to 150 μm.
< adhesive resin layer >)
The adhesive film 50 according to the present embodiment includes the ultraviolet-curable adhesive resin layer 20.
The adhesive resin layer 20 is a layer provided on one surface side of the base material layer 10, and is a layer that contacts and adheres to the circuit forming surface 30A of the electronic component 30 when the adhesive film 50 is adhered to the circuit forming surface 30A of the electronic component 30.
Examples of the adhesive constituting the adhesive resin layer 20 include (meth) acrylic adhesives, silicone adhesives, urethane adhesives, olefin adhesives, and styrene adhesives. Among them, a (meth) acrylic adhesive comprising a (meth) acrylic resin as a base polymer is preferable in that the adhesive strength can be easily adjusted.
As the adhesive constituting the adhesive resin layer 20, an ultraviolet crosslinking adhesive having reduced adhesive force by ultraviolet rays is preferably used.
The adhesive resin layer 20 made of the ultraviolet-crosslinking adhesive is crosslinked by irradiation of ultraviolet rays, and thus the adhesive force is remarkably reduced, so that the electronic component 30 is easily peeled from the adhesive film 50.
Examples of the (meth) acrylic resin contained in the (meth) acrylic adhesive include homopolymers of (meth) acrylate compounds, copolymers of (meth) acrylate compounds and comonomers, and the like. Examples of the (meth) acrylate compound include methyl (meth) acrylate, ethyl (meth) acrylate, butyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, hydroxyethyl (meth) acrylate, hydroxypropyl (meth) acrylate, dimethylaminoethyl (meth) acrylate, and glycidyl (meth) acrylate. These (meth) acrylate compounds may be used singly or in combination of two or more.
Examples of the comonomer constituting the (meth) acrylic copolymer include vinyl acetate, (meth) acrylonitrile, styrene, (meth) acrylic acid, itaconic acid, (meth) acrylamide, methylol (meth) acrylamide, and maleic anhydride. These comonomers may be used singly or in combination of two or more.
As the ultraviolet crosslinking type (meth) acrylic adhesive, the following adhesives may be exemplified: an adhesive comprising a (meth) acrylic resin having a polymerizable carbon-carbon double bond in the molecule and a photoinitiator, and if necessary, crosslinking the (meth) acrylic resin with a crosslinking agent. The ultraviolet-crosslinking type (meth) acrylic adhesive may further contain a low molecular weight compound having two or more polymerizable carbon-carbon double bonds in the molecule.
The (meth) acrylic resin having a polymerizable carbon-carbon double bond in the molecule is obtained specifically as follows. First, a monomer having an ethylenic double bond is copolymerized with a copolymerizable monomer having a functional group (P). Then, the functional group (P) contained in the copolymer and the monomer having the functional group (Q) capable of undergoing an addition reaction, a condensation reaction or the like with the functional group (P) are reacted in a state where a double bond in the monomer remains, and a polymerizable carbon-carbon double bond is introduced into the copolymer molecule.
Examples of the monomer having an ethylenic double bond include one or more monomers having an ethylenic double bond, such as methyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, butyl (meth) acrylate, alkyl acrylate monomers such as ethyl (meth) acrylate, vinyl esters such as vinyl acetate, and vinyl esters such as (meth) acrylonitrile, (meth) acrylamide, and styrene.
Examples of the copolymerizable monomer having the functional group (P) include (meth) acrylic acid, maleic acid, 2-hydroxyethyl (meth) acrylate, glycidyl (meth) acrylate, N-methylol (meth) acrylamide, and (meth) acryloyloxyethyl isocyanate. These may be used singly or in combination.
The ratio of the monomer having an ethylenic double bond to the copolymerizable monomer having a functional group (P) is preferably: the monomer having an ethylenic double bond is 70 to 99% by mass, and the copolymerizable monomer having a functional group (P) is 1 to 30% by mass. Further preferred are: the monomer having an ethylenic double bond is 80 to 95% by mass, and the copolymerizable monomer having a functional group (P) is 5 to 20% by mass.
Examples of the monomer having a functional group (Q) include the same monomers as the copolymerizable monomer having a functional group (P).
The combination of the functional group (P) and the functional group (Q) that reacts when a polymerizable carbon-carbon double bond is introduced into a copolymer of a monomer having an ethylenic double bond and a copolymerizable monomer having a functional group (P) is preferably a combination in which an addition reaction easily occurs between a carboxyl group and an epoxy group, between a carboxyl group and an aziridinyl group, between a hydroxyl group and an isocyanate group, or the like. In addition, the reaction is not limited to the addition reaction, and any reaction may be used as long as it is a reaction that can easily introduce a polymerizable carbon-carbon double bond, such as a condensation reaction of a carboxylic acid group and a hydroxyl group.
Examples of the low molecular weight compound having two or more polymerizable carbon-carbon double bonds in the molecule include tripropylene glycol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, tetramethylolmethane tetraacrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, and ditrimethylolpropane tetraacrylate. One or two or more kinds of them may be used. The amount of the low molecular weight compound having two or more polymerizable carbon-carbon double bonds in the molecule is preferably 0.1 to 20 parts by mass, more preferably 5 to 18 parts by mass, per 100 parts by mass of the (meth) acrylic resin.
Examples of the photoinitiator include benzoin, isopropyl benzoin ether, isobutyl benzoin ether, benzophenone, michler's ketone, chlorothioxanthone, dodecyl thioxanthone, dimethyl thioxanthone, diethyl thioxanthone, acetophenone diethyl ketal, benzildimethylketal, 1-hydroxycyclohexyl phenyl ketone, 2-hydroxy-2-methyl-1-phenylpropane-1-one, 2-benzyl-2-dimethylamino-4' -morpholinophenone, 2-dimethoxy-2-phenylacetophenone, 2-dimethylamino-2- (4-methylbenzyl) -1- (4-morpholin-4-yl-phenyl) butan-1-one, and the like. One or two or more kinds of them may be used. The amount of the photoinitiator to be added is preferably 0.1 to 15 parts by mass, more preferably 1 to 10 parts by mass, and even more preferably 4 to 10 parts by mass, based on 100 parts by mass of the (meth) acrylic resin.
A crosslinking agent may be added to the ultraviolet curable adhesive. Examples of the crosslinking agent include epoxy compounds such as sorbitol polyglycidyl ether, pentaerythritol polyglycidyl ether and diglycidyl ether; aziridine compounds such as tetramethylolmethane tri- β -aziridinyl propionate, trimethylolpropane tri- β -aziridinylpropionate, N ' -diphenylmethane-4, 4' -bis (1-aziridinecarboxamide), and N, N ' -hexamethylene-1, 6-bis (1-aziridinecarboxamide); and isocyanate compounds such as tetramethylene diisocyanate, hexamethylene diisocyanate and polyisocyanate. The ultraviolet curable adhesive may be any of solvent type, emulsion type, hot melt type, and the like.
The content of the crosslinking agent is generally preferably in a range of the extent that the number of functional groups in the crosslinking agent is not more than the number of functional groups in the (meth) acrylic resin. However, the functional groups may be contained in an excessive amount as needed, for example, when the functional groups are newly generated by the crosslinking reaction, when the crosslinking reaction is slow, or the like.
The content of the crosslinking agent in the (meth) acrylic adhesive is preferably 0.1 to 15 parts by mass, and more preferably 0.5 to 5 parts by mass, based on 100 parts by mass of the (meth) acrylic resin, from the viewpoint of improving the heat resistance and balance with the adhesion of the adhesive resin layer 20.
The adhesive resin layer 20 can be formed by, for example, applying an adhesive coating liquid on the base material layer 10.
As a method of applying the adhesive coating liquid, for example, conventionally known coating methods such as roll coating, reverse roll coating, gravure roll coating, bar coating, unfilled corner coating, die coating and the like can be used. The drying condition of the adhesive after application is not particularly limited, and in general, it is preferable to dry for 10 seconds to 10 minutes at a temperature ranging from 80 to 200 ℃. Further preferably, the drying is carried out at 80 to 170℃for 15 seconds to 5 minutes. In order to sufficiently promote the crosslinking reaction between the crosslinking agent and the (meth) acrylic resin, the adhesive coating liquid may be heated at 40 to 80 ℃ for about 5 to 300 hours after the drying is completed.
In the adhesive film 50 according to the present embodiment, the thickness of the adhesive resin layer 20 is preferably 5 μm or more and 300 μm or less, more preferably 10 μm or more and 100 μm or less, and still more preferably 10 μm or more and 50 μm or less. If the thickness of the adhesive resin layer 20 is within the above range, the balance between the adhesion to the surface of the electronic component 30 and the handling property is good.
2. Method for manufacturing electronic device
The method for manufacturing an electronic device according to the present embodiment includes at least the following three steps.
(A) A step of preparing a structure 100, wherein the structure 100 includes an electronic component 30 having a circuit formation surface 30A and an adhesive film 50 bonded to the circuit formation surface 30A side of the electronic component 30;
(B) A step of back grinding the surface of the electronic component 30 opposite to the circuit forming surface 30A side, and
(C) And a step of removing the adhesive film 50 from the electronic component 30 after irradiating the adhesive film 50 with ultraviolet rays.
The adhesive film 50 has a 60 DEG peel strength of 0.4N/25mm to 5.0N/25mm after irradiation with ultraviolet light, which is measured by the method described below.
(method) the adhesive film 50 is stuck to the silicon mirror wafer in such a manner that the adhesive resin layer 20 is in contact with the silicon mirror wafer. Next, the adhesive resin layer 20 was irradiated with an irradiation intensity of 100mW/cm using a high-pressure mercury lamp at 25 ℃ 2 Irradiating ultraviolet ray of 1080mJ/cm 2 The adhesive resin layer 20 is ultraviolet cured by ultraviolet rays having a dominant wavelength of 365 nm. Then, the adhesive film 50 was peeled off from the silicon mirror wafer in the 60 ° direction at a temperature of 23 ℃ and a speed of 150 mm/min by using a tensile tester, and the strength (N/25 mm) at this time was set to 60 ° peel strength.
Hereinafter, each step of the method for manufacturing an electronic device according to the present embodiment will be described.
(Process (A))
First, a structure 100 is prepared, and the structure 100 includes an electronic component 30 having a circuit formation surface 30A and an adhesive film 50 bonded to the circuit formation surface 30A side of the electronic component 30.
Such a structure 100 can be manufactured, for example, as follows: the release film is peeled from the adhesive resin layer 20 of the adhesive film 50, the surface of the adhesive resin layer 20 is exposed, and the circuit forming surface 30A of the electronic component 30 is bonded to the adhesive resin layer 20.
Here, the conditions for attaching the circuit forming surface 30A of the electronic component 30 to the adhesive film 50 are not particularly limited, and may be, for example, as follows: the temperature is 20-80 ℃, the pressure is 0.05-0.5 MPa, and the pasting speed is 0.5-20 mm/s.
The step (a) preferably further includes a step (A1) and a step (A2), and the step (A1) is at least one selected from the step (A1-1) of half-cutting the electronic component 30 and the step (A1-2) of irradiating the electronic component 30 with laser light to form a modified layer on the electronic component 30; in the step (A2), after the step (A1), the adhesive film 50 is adhered to the circuit forming surface 30A side of the electronic component 30.
As described above, in the manufacturing process of the electronic device using the dicing method, the stealth method, or the like, scattering or chipping of the electronic component 30 is likely to occur after the back grinding process, and therefore, the manufacturing method of the electronic device according to the present embodiment can be suitably applied to the manufacturing process of the electronic device using the dicing method, the stealth method, or the like. Therefore, the method for producing the step (A1-1) as the pre-dicing method and the step (A1-2) as the pre-stealth method are preferably carried out.
In the step (A2), the adhesive film 50 may be heated and adhered to the circuit forming surface 30A of the electronic component 30. This can improve the adhesion state between the adhesive resin layer 20 and the electronic component 30 for a long period of time. The heating temperature is not particularly limited, and is, for example, 60 to 80 ℃.
Although the operation of attaching the adhesive film 50 to the electronic component 30 may be performed manually, it is generally performed by an apparatus called an automatic attaching machine to which a roll-shaped adhesive film is attached.
The electronic component 30 to be adhered to the adhesive film 50 is not particularly limited, and the electronic component 30 having the circuit forming surface 30A is preferable. Examples of the semiconductor wafer include a semiconductor wafer, an epoxy-molded wafer, a molded panel, a molded array package, and a semiconductor substrate, and a semiconductor wafer and an epoxy-molded wafer are preferable.
Examples of the semiconductor wafer include a silicon wafer, a sapphire wafer, a germanium-arsenic wafer, a gallium-phosphorus wafer, a gallium-arsenic-aluminum wafer, a gallium-arsenic wafer, and a lithium tantalate wafer, but are preferably used for the silicon wafer. As the epoxy molding wafer, a wafer manufactured by an eWLB (Embedded Wafer Level Ball Grid Array ) process, which is one of the manufacturing methods of the fan-out WLP, may be cited.
The semiconductor wafer having a circuit-forming surface and the epoxy-molded wafer are not particularly limited, and are used, for example, for a wafer having a circuit such as a wiring, a capacitor, a diode, or a transistor formed on the surface thereof. The circuit formation surface may be subjected to plasma treatment.
The circuit forming surface 30A of the electronic component 30 may be formed into a concave-convex surface by having a bump electrode or the like, for example.
The bump electrode is, for example: when the electronic device is mounted on the mounting surface, the bump electrode is bonded to an electrode formed on the mounting surface to form an electrical connection between the electronic device and the mounting surface (mounting surface of a printed circuit board or the like).
Examples of the bump electrode include a ball bump, a print bump, a Stud bump (club bump), a plating bump, and a Stud bump. That is, the bump electrode is typically a convex electrode. These bump electrodes may be used singly or in combination of two or more.
The height and diameter of the bump electrode are not particularly limited, but are preferably 10 to 400 μm, more preferably 50 to 300 μm, respectively. The bump pitch in this case is not particularly limited, but is preferably 20 to 600. Mu.m, more preferably 100 to 500. Mu.m.
The metal type constituting the bump electrode is not particularly limited, and examples thereof include solder, silver, gold, copper, tin, lead, bismuth, and alloys thereof. The adhesive film 50 is suitable for the case where the bump electrode is a solder bump. One kind of these metals may be used alone or two or more kinds may be used in combination.
(Process (B))
Next, the surface (also referred to as a back surface) of the electronic component 30 opposite to the circuit forming surface 30A side is back-polished.
Here, the back grinding means thinning the electronic component 30 to a predetermined thickness without breakage.
For example, the structure 100 is fixed to a chuck table of a grinding machine or the like, and the back surface (circuit non-formation surface) of the electronic component 30 is ground.
In such a back grinding operation, the electronic component 30 is ground to a thickness equal to or less than a desired thickness. The thickness of the electronic component 30 before grinding is appropriately determined according to the diameter, the kind, etc. of the electronic component 30, and the thickness of the electronic component 30 after grinding is appropriately determined according to the size of the obtained chip, the kind of the circuit, etc.
In addition, when the electronic component 30 is half-cut or the modified layer is formed by laser irradiation, the electronic component 30 is singulated by the step (B) as shown in fig. 1.
The back surface grinding method is not particularly limited, and a known grinding method can be used. Each grinding can be performed while applying water to the electronic component 30 and the grinding stone to cool them. If necessary, a dry polishing process, which is a grinding method using no grinding water, may be performed at the end of the grinding process. After the back grinding is completed, chemical etching is performed as needed. The chemical etching is performed by the following method, namely: a method of impregnating the electronic component 30 or the like with the adhesive film 50 in an etching solution selected from the group consisting of an acidic aqueous solution, a potassium hydroxide aqueous solution, and an alkaline aqueous solution such as a sodium hydroxide aqueous solution, which are separate or mixed solutions including hydrofluoric acid, nitric acid, sulfuric acid, acetic acid, and the like. The etching is performed for the following purpose: the purpose of removing strain generated on the back surface of the electronic component 30, further thinning of the electronic component 30, removal of an oxide film or the like, pretreatment at the time of forming an electrode on the back surface, and the like. The etching liquid is appropriately selected according to the above purpose.
(Process (C))
Next, after ultraviolet rays are irradiated to the adhesive film 50, the adhesive film 50 is removed from the electronic component 30. In the step (C), the adhesive film 50 is irradiated with, for example, 200mJ/cm 2 Above 2000mJ/cm 2 The adhesive resin layer 20 is cured by ultraviolet rays at the following dose, and the adhesive film 50 is removed from the electronic component 30 after the adhesive force of the adhesive resin layer 20 is reduced.
The ultraviolet irradiation may be performed by using, for example, a high-pressure mercury lamp and ultraviolet rays having a dominant wavelength of 365 nm.
The irradiation intensity of the ultraviolet ray is, for example, 50mW/cm 2 Above 500mW/cm 2 The following is given.
The electronic component 30 may be mounted on a dicing tape or dicing tape with a die bonding film before the adhesive film is removed from the electronic component 30. Although the operation of removing the adhesive film 50 from the electronic component 30 is also sometimes performed manually, it can be generally performed by an apparatus called an automatic peeler.
The surface of the electronic component 30 from which the adhesive film 50 is peeled may be washed as needed. The washing method includes wet washing such as water washing and solvent washing, dry washing such as plasma washing, and the like. In the case of wet washing, ultrasonic washing may also be used. These washing methods may be appropriately selected according to the contamination condition of the surface of the electronic component 30.
(other procedure)
After the steps (a) to (C), a step of mounting the obtained semiconductor chip on a circuit board may be further performed. These steps can be performed based on known information.
While the preferred embodiments of the present invention have been described above, these are illustrative of the present invention, and various configurations other than the above may be adopted.
Examples
The present invention will be described specifically with reference to examples and comparative examples, but the present invention is not limited thereto.
Details of the production of the adhesive film are as follows.
< substrate layer >)
Substrate layer 1: polyethylene terephthalate film (manufactured by Toyobo Co., ltd., product name: E7180, thickness: 50 μm, single-sided corona treated product)
Substrate layer 2: laminated film comprising low-density polyethylene film/polyethylene terephthalate film/low-density polyethylene film (total thickness: 110 μm)
A polyethylene terephthalate film (manufactured by Toli Co., ltd.: lumirrorS 10, thickness: 50 μm) was laminated on both sides with a low-density polyethylene film (density: 0.925 kg/m) 3 Thickness of: 30 μm). Corona treatment was performed on one side of the obtained laminated film.
Substrate layer 3: laminate film comprising polyethylene terephthalate film/ethylene-vinyl acetate copolymer film/acrylic acid film (total thickness: 145 μm)
A polyethylene terephthalate film (manufactured by Toyobo Co., ltd., product name: E7180, thickness: 50 μm) and an ethylene-vinyl acetate copolymer film (manufactured by Sanwell/Dow polymerization Co., ltd., MFR:2.5g/10 min) were laminated by subjecting the side of the ethylene-vinyl acetate copolymer film, which was bonded to the polyethylene terephthalate film, to corona treatment. Further, the opposite side of the ethylene-vinyl acetate copolymer film from the polyethylene terephthalate film was also subjected to corona discharge treatment.
Next, an acrylic resin coating liquid for a base material shown below was applied to the release surface of the release-treated polyethylene terephthalate film (separator) so as to have a dry thickness of 20 μm, and dried, and the ethylene-vinyl acetate copolymer film was bonded to the laminate film containing the polyethylene terephthalate film/ethylene-vinyl acetate copolymer film, followed by curing (40 ℃ for 3 days). Subsequently, the separator was peeled off to obtain a base material layer 3.
Acrylic resin coating liquid for substrate
As a polymerization initiator, 0.5 part by mass of 4,4' -azobis-4-cyanovaleric acid (manufactured by Otsuka chemical Co., ltd., product name: ACVA) was used, and 74 parts by mass of butyl acrylate, 14 parts by mass of methyl methacrylate, 9 parts by mass of 2-hydroxyethyl methacrylate, 2 parts by mass of methacrylic acid, 1 part by mass of acrylamide, 3 parts by mass of an aqueous solution of polyoxyethylene nonylphenyl ether ammonium sulfate (manufactured by first Industrial pharmaceutical Co., product name: aquaron HS-1025) was emulsion polymerized in deionized water at 70℃for 9 hours. After completion of the polymerization, the pH was adjusted to 7 with ammonia water to obtain an aqueous emulsion of an acrylic polymer having a solid content of 42.5%. Subsequently, the aqueous acrylic polymer emulsion was adjusted to ph=9 or more using ammonia water with respect to 100 parts by mass of the aqueous acrylic polymer emulsion, and 0.75 parts by mass of an aziridine-based crosslinking agent (Chemitite PZ-33, manufactured by japan catalyst chemical industry) and 5 parts by mass of diethylene glycol monobutyl ether were blended to obtain a coating liquid for a substrate.
(meth) acrylic resin solution
(meth) acrylic resin solution 1:
49 parts by mass of ethyl acrylate, 20 parts by mass of 2-ethylhexyl acrylate, 21 parts by mass of methyl acrylate, 10 parts by mass of glycidyl methacrylate, and 0.5 part by mass of a benzoyl peroxide-based polymerization initiator as a polymerization initiator were reacted in 65 parts by mass of toluene and 50 parts by mass of ethyl acetate at 80℃for 10 hours. After the completion of the reaction, the obtained solution was cooled, and 25 parts by mass of xylene, 5 parts by mass of acrylic acid, and 0.5 part by mass of tetradecyldimethylbenzyl ammonium chloride were added to the cooled solution, followed by air blowing and reaction at 85℃for 32 hours to obtain (meth) acrylic resin solution 1.
(meth) acrylic resin solution 2:
77 parts by mass of n-butyl acrylate, 16 parts by mass of methyl methacrylate, 16 parts by mass of 2-hydroxyethyl acrylate, and 0.3 part by mass of t-butylperoxy-2-ethylhexanoate as a polymerization initiator were reacted in 20 parts by mass of toluene and 80 parts by mass of ethyl acetate at 85℃for 10 hours. After completion of the reaction, the solution was cooled, and 30 parts by mass of toluene, 7 parts by mass of methacryloxyethyl isocyanate (manufactured by Showa electric Co., ltd.: karenz MOI) and 0.05 part by mass of dibutyltin dilaurate were added thereto, followed by reaction at 85℃for 12 hours while blowing air, to obtain (meth) acrylic resin solution 2.
(meth) acrylic resin solution 3:
30 parts by mass of ethyl acrylate, 11 parts by mass of methyl acrylate, 26 parts by mass of 2-ethylhexyl acrylate, 7 parts by mass of 2-hydroxyethyl methacrylate, and 0.8 part by mass of a benzoyl peroxide-based polymerization initiator as a polymerization initiator were reacted in 7 parts by mass of toluene and 50 parts by mass of ethyl acetate at 80℃for 9 hours. After the completion of the reaction, the obtained solution was cooled, and 25 parts by mass of toluene was added to the cooled solution to obtain (meth) acrylic resin solution 3.
< preparation of adhesive film >
The adhesive coating liquid for the adhesive resin layer was prepared by adding the additives shown in table 1 to the acrylic resin solution. The coating liquid was applied to a polyethylene terephthalate film (separator) after the silicone release treatment. Then, the film was dried at 120℃for 3 minutes to form an adhesive resin layer having a thickness of 20. Mu.m, and the adhesive resin layer was bonded to the base layer. The substrate layers 1 and 2 were bonded to the corona treated surface. The separator was peeled off from the base layer 3 and bonded to the acrylic layer side. The obtained laminate was heated at 40℃for 3 days by an oven to prepare an adhesive film.
Method for evaluating adhesive film
(1) 60 ° peel strength after uv curing
A silicon mirror wafer (8-inch single-sided mirror wafer) was cut into a size of 50mm by 100 mm. The wafer mirror surface was subjected to ozone washing (ozone treatment time: 60 seconds) by a UV ozone washing apparatus (manufactured by Technovision Co., ltd., UV-208). Then, the wafer after wiping the mirror surface of the wafer with ethanol was set as an adherend wafer.
The adhesive film was cut into pieces having a width of 25mm at 23℃under 50% RH, the separator was peeled off, and the adhesive film was adhered to the mirror surface of the adherend wafer via the adhesive resin layer by using a manual roller, and left for 1 hour. After the placing, a high-pressure mercury lamp is used to irradiate the intensityDegree of 100mW/cm 2 The adhesive film was irradiated with ultraviolet rays of 1080mJ/cm 2 Is ultraviolet rays with a dominant wavelength of 365 nm. Then, the adherend wafer to which the adhesive film was attached was fixed to an adhesive/film peeling analysis device (VPA-2S, manufactured by the company interface science corporation), and one end of the adhesive film was fixed to the load cell side with a cellophane tape. At a peel angle: 60 °, peeling speed: the adhesive film was peeled off from the surface of the adherend wafer at 150 mm/min, and the 60℃peel strength after UV irradiation was determined from the stress at this time. The evaluation was performed with n=2, and the value was averaged to obtain a measurement value.
(2) Evaluation of 180 ° peel strength
An adherend wafer:
the mirror surface of a silicon mirror wafer (4-inch single-sided mirror wafer) was subjected to ozone washing (ozone treatment time: 60 seconds) by a UV ozone washing apparatus (manufactured by Technovision Co., ltd., UV-208). Then, the wafer after wiping the mirror surface of the wafer with ethanol was set as an adherend wafer.
Peel strength before uv irradiation:
the adhesive film was cut into pieces having a width of 50mm at 23℃under 50% RH, and the separator was peeled off, and the adhesive film was adhered to the mirror surface of the adherend wafer via the adhesive resin layer by using a manual roller, and left for 1 hour. After leaving, one end of the adhesive film was held by a tensile tester (Shimadzu corporation, product name: automatic plotter AGS-X) to peel off at an angle: 180 degrees, peel speed: the adhesive film was peeled from the surface of the adherend wafer at 300 mm/min. The stress at this time was measured and converted to N/25mm to determine the peel strength. The evaluation was performed with n=2, and the value was averaged to obtain a measurement value.
Peel strength after uv irradiation: the adhesive film was cut into pieces having a width of 50mm at 23℃under 50% RH, and the separator was peeled off, and the adhesive film was adhered to the mirror surface of the adherend wafer via the adhesive resin layer by using a manual roller, and left for 1 hour. After leaving to stand, a high-pressure mercury lamp was used at an irradiation intensity of 100mW/cm in an atmosphere of 25 DEG C 2 The adhesive film was irradiated with ultraviolet rays of 1080mJ/cm 2 Is ultraviolet rays with a dominant wavelength of 365 nm. Then, a tensile tester (islandThe product name of the body fluid manufacturing institute: automatic plotter AGS-X), holding one end of the adhesive film at a peeling angle: 180 degrees, peel speed: the adhesive film was peeled from the surface of the adherend wafer at 300 mm/min. The stress at this time was measured and converted to N/25mm to determine the peel strength. The evaluation was performed with n=2, and the value was averaged to obtain a measurement value.
Evaluation of residual glue:
the peeled adherend wafer was visually observed and evaluated according to the following criteria.
(good): no residual glue is confirmed
X (difference): confirm the situation of the residual glue
(3) Evaluation by cutting-first method
Evaluation wafer 1:
the mirror surface of a mirror wafer (8-inch mirror wafer, diameter: 200.+ -. 0.5mm, thickness: 725.+ -. 50 μm, single-sided mirror surface) was half-cut using a dicing machine to obtain an evaluation wafer 1. (blade: ZH05-SD3500-N1-70-DD, chip size: 5 mm. Times.8 mm, kerf depth: 58 μm, blade rotation speed: 30000 rpm). The wafer 1 was evaluated by observation with an optical microscope, and as a result, the scratch width was 35. Mu.m.
Evaluation wafer 2:
half-cutting (blade: Z09-SD 2000-Y158X 0.25AX10X145E-L, chip size: 5mm X8 mm, kerf depth: 15 μm, blade rotation speed: 30000 rpm) of the first stage was performed on the mirror surface of the mirror wafer (8 inch mirror wafer, diameter: 200.+ -. 0.5mm, thickness: 725.+ -. 50 μm, single-sided mirror surface) using a dicing machine. As a result of observation with an optical microscope, the scratch width was 60. Mu.m. Next, half dicing (blade: ZH05-SD3500-N1-70-DD, chip size: 5 mm. Times.8 mm, kerf depth: 58 μm, blade rotation speed: 30000 rpm) of the second stage was performed to obtain an evaluation wafer 2.
Cutting method:
the adhesive film was adhered to the half-cut surface (23 ℃ C., adhesion speed: 5 mm/min, adhesion pressure: 0.36 MPa) of the evaluation wafer using a tape lamination machine (DR 3000II, manufactured by Ridong electric Co., ltd.).
Next, the wafer was subjected to back grinding (rough cut and fine cut, the amount of fine cut: 40 μm, no polishing, and the thickness after grinding: 38 μm) using a grinder (manufactured by DISCO Co., ltd., DGP 8760), and singulated.
The chip scattering at the time of dicing was evaluated by visual inspection after back grinding, according to the following criteria.
(good): including the triangular corner, no chip scattering was confirmed
X (difference): including the triangular corner, confirming the scattering of the chip
Further, ultraviolet irradiation and peeling of the adhesive film were performed, and the residual glue after the dicing method was evaluated.
Ultraviolet irradiation was performed at an intensity of 100mW/cm using a high pressure mercury lamp at 25 ℃ 2 The adhesive film was irradiated with ultraviolet rays of 1080mJ/cm 2 Is ultraviolet rays with a dominant wavelength of 365 nm.
The release of the adhesive film was performed as follows. First, using a wafer mounter (MSA 300, manufactured by the eastern electrician corporation), a dicing tape (used as a mounting tape) prepared separately was attached to the ring frame for an 8-inch wafer and the wafer side of the singulated wafer via the adhesive surface of the dicing tape. Then, the adhesive film was peeled from the wafer notch portion by using a tape peeler (HR 3000III, manufactured by the eastern electric company), and a peeling tape (PET 38REL, manufactured by the lamination system company). The device peelability was evaluated according to the following criteria.
(good): the adhesive film can be peeled from the wafer for the first time
X (difference): in the case where the adhesive film is not peeled from the wafer for the first time
The residual glue on the singulated wafer after dicing was evaluated by using an optical microscope (manufactured by olympus corporation) according to the following criteria.
(good): no residual glue is confirmed
X (difference): confirm the situation of the residual glue
Example 1
6.9 parts by mass of 2, 2-dimethoxy-2-phenylacetophenone (trade name: omnirad 651, manufactured by IGM corporation) and 0.93 part by mass of an isocyanate-based crosslinking agent (trade name: olester P49-75S, manufactured by tsu chemical corporation) were added to 100 parts by mass of (meth) acrylic resin solution 1 (solid content), thereby obtaining adhesive coating liquid 1 for an adhesive resin layer. By the above method, an adhesive film was produced. In addition, based on the evaluation method described previously, evaluation of 60 ° peel strength after ultraviolet curing, evaluation of 180 ° peel strength, and evaluation by a dicing method were performed. The results are shown in table 1.
Examples 2 to 9 and comparative examples 1 and 2
Adhesive films were produced in the same manner as in example 1, except that the types of the adhesive resin layer and the base material layer were changed to those shown in table 1. Each evaluation was performed in the same manner as in example 1. The results obtained are shown in table 1, respectively.
The compounds shown in table 1 are as follows.
omnirad 651 (IGM corporation): 2, 2-dimethoxy-2-phenylacetophenone
omnirad 369 (made by IGM corporation): 2-benzyl-2-dimethylamino-4' -morpholinophenone butanone
aronix M400 (manufactured by eastern synthetic corporation): mixtures of dipentaerythritol pentaacrylate and dipentaerythritol hexaacrylate
NK ESTER AD-TMP (manufactured by New Yoghurt chemical industry Co., ltd.): di (trimethylolpropane) tetraacrylate
TABLE 1
The present application claims priority based on japanese application publication No. 2020-125478 filed at 7/22 in 2020, the entire disclosure of which is incorporated herein by reference.
Symbol description
10 substrate layer
20 adhesive resin layer
30 electronic component
30A Circuit Forming surface
50-adhesive film
100 structure.
Claims (6)
1. A method for manufacturing an electronic device includes at least the steps of:
a step (A) of preparing a structure having an electronic component having a circuit-forming surface and an adhesive film bonded to the circuit-forming surface side of the electronic component,
a step (B) of back-grinding a surface of the electronic component opposite to the circuit-forming surface side, and
a step (C) of irradiating the adhesive film with ultraviolet light and then removing the adhesive film from the electronic component,
The adhesive film comprises a base layer and an ultraviolet-curable adhesive resin layer provided on one surface side of the base layer,
the adhesive film has a 60 DEG peel strength of 0.4N/25mm to 5.0N/25mm after irradiation of ultraviolet light measured by the following method,
the method comprises the following steps:
the adhesive film was stuck to a silicon mirror wafer in such a manner that the adhesive resin layer was in contact with the silicon mirror wafer, and then, the adhesive film was irradiated with an irradiation intensity of 100mW/cm using a high-pressure mercury lamp at 25 ℃ 2 Irradiating ultraviolet ray of 1080mJ/cm 2 The adhesive resin layer was cured by ultraviolet rays having a dominant wavelength of 365nm, and then the adhesive film was peeled from the silicon mirror wafer in a 60 ° direction at a speed of 150 mm/min at 23 ℃ using a tensile tester, and the strength (N/25 mm) at this time was set to 60 ° peel strength.
2. The method for manufacturing an electronic device according to claim 1, wherein the step (a) comprises the steps of:
a step (A1) selected from at least one of a step (A1-1) of half-cutting the electronic component and a step (A1-2) of irradiating the electronic component with laser light to form a modified layer on the electronic component;
And (A2) adhering the adhesive film to the circuit forming surface side of the electronic component after the step (A1).
3. The method for manufacturing an electronic device according to claim 1 or 2, wherein in the step (C), the adhesive film is irradiated with 200mJ/cm 2 Above 2000mJ/cm 2 The adhesive film is removed from the electronic component after the adhesive resin layer is cured by ultraviolet rays at the following dose to reduce the adhesive force of the adhesive resin layer.
4. The method for manufacturing an electronic device according to any one of claims 1 to 3, wherein the adhesive resin layer contains a (meth) acrylic resin having a polymerizable carbon-carbon double bond in a molecule and a photoinitiator.
5. The method for manufacturing an electronic device according to any one of claims 1 to 4, wherein the thickness of the adhesive resin layer is 5 μm or more and 300 μm or less.
6. The method for manufacturing an electronic device according to any one of claims 1 to 5, wherein the resin constituting the base material layer contains one or more selected from polyolefin, polyester, polyamide, polyacrylate, polymethacrylate, polyvinyl chloride, polyvinylidene chloride, polyimide, polyetherimide, ethylene-vinyl acetate copolymer, polyacrylonitrile, polycarbonate, polystyrene, ionomer, polysulfone, polyethersulfone, and polyphenylene oxide.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020125478 | 2020-07-22 | ||
| JP2020-125478 | 2020-07-22 | ||
| PCT/JP2021/026141 WO2022019166A1 (en) | 2020-07-22 | 2021-07-12 | Method for producing electronic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116157481A true CN116157481A (en) | 2023-05-23 |
Family
ID=79728735
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202180060071.9A Pending CN116157481A (en) | 2020-07-22 | 2021-07-12 | Method for manufacturing electronic device |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP7556965B2 (en) |
| KR (1) | KR20230031942A (en) |
| CN (1) | CN116157481A (en) |
| TW (1) | TW202209459A (en) |
| WO (1) | WO2022019166A1 (en) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6059499B2 (en) | 2012-10-05 | 2017-01-11 | リンテック株式会社 | Surface protection sheet |
| JP5823591B1 (en) | 2014-10-01 | 2015-11-25 | 古河電気工業株式会社 | Adhesive tape for protecting semiconductor wafer surface and method for processing semiconductor wafer |
| JP7305617B2 (en) | 2018-03-29 | 2023-07-10 | リンテック株式会社 | Adhesive composition and adhesive tape |
-
2021
- 2021-07-12 WO PCT/JP2021/026141 patent/WO2022019166A1/en active Application Filing
- 2021-07-12 KR KR1020237003758A patent/KR20230031942A/en not_active Application Discontinuation
- 2021-07-12 JP JP2022537933A patent/JP7556965B2/en active Active
- 2021-07-12 CN CN202180060071.9A patent/CN116157481A/en active Pending
- 2021-07-20 TW TW110126660A patent/TW202209459A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| TW202209459A (en) | 2022-03-01 |
| JP7556965B2 (en) | 2024-09-26 |
| JPWO2022019166A1 (en) | 2022-01-27 |
| KR20230031942A (en) | 2023-03-07 |
| WO2022019166A1 (en) | 2022-01-27 |
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