CN115702480A - Method for manufacturing electronic device - Google Patents

Method for manufacturing electronic device Download PDF

Info

Publication number
CN115702480A
CN115702480A CN202180041878.8A CN202180041878A CN115702480A CN 115702480 A CN115702480 A CN 115702480A CN 202180041878 A CN202180041878 A CN 202180041878A CN 115702480 A CN115702480 A CN 115702480A
Authority
CN
China
Prior art keywords
adhesive
electronic component
adhesive film
resin layer
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180041878.8A
Other languages
Chinese (zh)
Inventor
安井浩登
栗原宏嘉
木下仁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Chemicals Tohcello Inc
Original Assignee
Mitsui Chemicals Tohcello Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Chemicals Tohcello Inc filed Critical Mitsui Chemicals Tohcello Inc
Publication of CN115702480A publication Critical patent/CN115702480A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/06—Non-macromolecular additives organic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/10—Adhesives in the form of films or foils without carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)

Abstract

The invention provides a method for manufacturing an electronic device, which at least comprises the following steps: a step (A) of preparing a structure (100), wherein the structure (100) comprises a toolAn electronic component (30) having a circuit forming surface (30A) and an adhesive film (50) adhered to the electronic component (30) on the circuit forming surface (30A) side; a step (B) of back-grinding the surface of the electronic component (30) opposite to the circuit forming surface (30A); and a step (C) for irradiating the adhesive film (50) with ultraviolet rays and then removing the adhesive film (50) from the electronic component (30), wherein the adhesive film (50) comprises a base material layer (10) and an ultraviolet-curable adhesive resin layer (20) provided on one side of the base material layer (10), and is irradiated with ultraviolet rays at a dose of 1080mJ/cm 2 The elongation at break of the adhesive resin layer (20) after ultraviolet light is 20% to 200%.

Description

Method for manufacturing electronic device
Technical Field
The present invention relates to a method for manufacturing an electronic device.
Background
In the process of grinding electronic components in the manufacturing process of electronic devices, an adhesive film is attached to the circuit forming surface of the electronic components in order to fix the electronic components or prevent damage to the electronic components.
As such an adhesive film, a film in which an adhesive resin layer is laminated on a base film is generally used.
With the development of high-density mounting technology, electronic components such as semiconductor wafers are required to be thinned, and thinning processing is required to a thickness of, for example, 50 μm or less.
One of such thinning processes is a precut process: before grinding of the electronic component, a groove of a predetermined depth is formed on the surface of the electronic component, and then grinding is performed to singulate the electronic component. In addition, there is a pre-concealment method: before the grinding process, the inside of the electronic component is irradiated with laser light to form a modified region, and then grinding is performed to singulate the electronic component.
Examples of the technique relating to the adhesive film used in the precut method and the pre-hiding method include techniques described in patent document 1 (japanese patent application laid-open No. 2014-75560) and patent document 2 (japanese patent application laid-open No. 2016-72546).
Patent document 1 describes a surface protection sheet having an adhesive layer on a base material, and satisfies the following requirements (a) to (d).
(a) The Young's modulus of the base material is 450MPa or more;
(b) The storage modulus of the adhesive layer at 25 ℃ is 0.10MPa or more;
(c) The adhesive layer has a storage modulus at 50 ℃ of 0.20MPa or less;
(d) The thickness of the adhesive layer is 30 [ mu ] m or more.
Patent document 1 describes: such a surface protective sheet can prevent water from entering a protected surface of a workpiece (slurry from entering) from a gap formed by cutting the workpiece in a back grinding process of the workpiece, thereby preventing contamination of the protected surface of the workpiece.
Patent document 2 describes an adhesive tape for protecting a surface of a semiconductor wafer, which comprises a base resin film and a radiation-curable adhesive layer formed on at least one surface side of the base resin film, wherein the base resin film comprises at least one rigid layer having a tensile elastic modulus of 1 to 10GPa, and a peel force at a peel angle of 30 ° after radiation curing of the adhesive layer is 0.1 to 3.0N/25mm.
Patent document 2 describes: with such an adhesive tape for protecting the surface of a semiconductor wafer, in the back grinding step of a semiconductor wafer to which the pre-dicing method or the pre-burying method is applied, it is possible to suppress the notch shift (kerf shift) of the singulated semiconductor chips and process the semiconductor wafer without damage and contamination.
Documents of the prior art
Patent document
Patent document 1: japanese laid-open patent publication No. 2014-75560
Patent document 2: japanese patent laid-open publication No. 2016-72546
Disclosure of Invention
Problems to be solved by the invention
According to the studies of the present inventors, it has been found that, for example, in a manufacturing process of an electronic device using a precut method, a pre-concealing method, or the like, when an adhesive film is peeled off from an electronic component after a back-grinding step, adhesive residue is likely to occur on the electronic component side.
The present invention has been made in view of the above circumstances, and provides a method for manufacturing an electronic device, which can suppress adhesive residue on the electronic component side when an adhesive film is peeled off from the electronic component after a back-grinding step.
Means for solving the problems
The present inventors have conducted extensive studies to solve the above problems. As a result, the inventors have found that the elongation at break of the adhesive resin layer after irradiation with ultraviolet rays is adjusted to a specific range, whereby the adhesive film can be prevented from being left on the electronic component side when the adhesive film is peeled off from the electronic component after the back-grinding step, and have completed the present invention.
According to the present invention, there is provided a method of manufacturing an electronic device described below.
[1]
A method of manufacturing an electronic device, comprising:
a step (A) of preparing a structure including an electronic component having a circuit-formed surface and an adhesive film attached to the circuit-formed surface side of the electronic component;
a step (B) of back-grinding a surface of the electronic component opposite to the circuit forming surface; and
a step (C) of irradiating the adhesive film with ultraviolet rays and then removing the adhesive film from the electronic component,
the adhesive film comprises a base material layer and an ultraviolet-curable adhesive resin layer provided on one surface side of the base material layer,
irradiation ultraviolet dose is 1080mJ/cm 2 The breaking elongation of the adhesive resin layer after the ultraviolet ray is 20% to 200%.
[2]
The method for manufacturing an electronic device according to item [1] above,
the step (a) includes:
a step (A1) of at least one selected from the step (A1-1) of half-cutting the electronic component and the step (A1-2) of irradiating the electronic component with a laser beam to form a modified layer on the electronic component; and
and (A2) after the step (A1), attaching the adhesive film to the circuit formation surface side of the electronic component.
[3]
The method for manufacturing an electronic device according to the above [1] or [2],
in the step (C), the adhesive film is irradiated with 200mJ/cm 2 Above 2000mJ/cm 2 And ultraviolet rays in an amount of below a dose, so that the adhesive resin layer is photocured to reduce the adhesive force of the adhesive resin layer, and then the adhesive film is removed from the electronic component.
[4]
The method of manufacturing an electronic device according to any one of the above items [1] to [3],
the adhesive resin layer contains a (meth) acrylic resin having a polymerizable carbon-carbon double bond in the molecule and a photoinitiator.
[5]
The method of manufacturing an electronic device according to any one of the above [1] to [4],
the thickness of the adhesive resin layer is 5 μm to 300 μm.
[6]
The method of manufacturing an electronic device according to any one of the above [1] to [5],
the resin constituting the base layer contains one or more selected from the group consisting of polyolefin, polyester, polyamide, polyacrylate, polymethacrylate, polyvinyl chloride, polyvinylidene chloride, polyimide, polyetherimide, ethylene-vinyl acetate copolymer, polyacrylonitrile, polycarbonate, polystyrene, ionomer, polysulfone, polyethersulfone, and polyphenylene oxide.
Effects of the invention
According to the present invention, it is possible to provide a method for manufacturing an electronic device capable of suppressing adhesive residue on the electronic component side when the adhesive film is peeled off from the electronic component after the back grinding step.
Drawings
FIG. 1 is a cross-sectional view schematically showing an example of the structure of an adhesive film according to an embodiment of the present invention.
FIG. 2 is a sectional view schematically showing an example of a method for manufacturing an electronic device according to an embodiment of the present invention.
Detailed Description
Hereinafter, embodiments of the present invention will be described with reference to the drawings. In all the drawings, the same components are denoted by the same reference numerals, and the description thereof is omitted as appropriate. The drawing is a schematic view, and does not match the actual size ratio. Unless otherwise specified, "a to B" in the numerical range means a to B. In the present embodiment, "(meth) acrylic" refers to acrylic acid, methacrylic acid, or both acrylic acid and methacrylic acid.
Fig. 1 is a cross-sectional view schematically showing an example of the structure of an adhesive film 50 according to an embodiment of the present invention. Fig. 2 is a sectional view schematically showing an example of a method for manufacturing an electronic device according to an embodiment of the present invention.
The method for manufacturing an electronic device of the present embodiment includes at least: a step (a) of preparing a structure 100 including an electronic component 30 having a circuit formation surface 30A and an adhesive film 50 attached to the electronic component 30 on the circuit formation surface 30A side; a step (B) of back-grinding a surface of the electronic component 30 opposite to the circuit-formation-surface 30A side; and a step (C) of irradiating the adhesive film (50) with ultraviolet light and then removing the adhesive film (50) from the electronic component (30), wherein the adhesive film (50) comprises a base material layer (10) and an ultraviolet-curable adhesive resin layer (20) provided on one surface side of the base material layer (10), and is irradiated with ultraviolet light at a dose of 1080mJ/cm 2 The breaking elongation of the adhesive resin layer 20 after the ultraviolet light (after the ultraviolet curing) is 20% to 200%.
Here, the elongation at break of the adhesive resin layer 20 after the ultraviolet curing is a value measured by the following method.
(method)
The following measurement samples were prepared: an adhesive resin layer 20 having the same thickness, composition, etc. as the adhesive resin layer 20 of the adhesive film 50 of the present embodiment is laminated on the corona-treated surface of an ethylene-vinyl acetate copolymer extruded film (MFR: 1.7g/10min, vinyl acetate content: 9 mass%, thickness: 140 μm) subjected to corona treatment, and a release film (separator) such as a polyethylene terephthalate film subjected to silicone release treatment is further laminated on the adhesive resin layer 20 side.
Examples of the lamination method include the following methods.
An adhesive resin layer 20 was formed on the release-treated surface of the silicone release-treated polyethylene terephthalate film, and then a corona-treated ethylene-vinyl acetate copolymer film was attached to the adhesive resin layer 20 to obtain a laminate. Subsequently, the obtained laminate was heated in an oven at 40 ℃ for 3 days to cure it.
Then, from the ethylene-vinyl acetate copolymer film side of the laminate obtained, a high pressure mercury lamp was used at an irradiation intensity of 100mW/cm at 25 ℃ to the adhesive resin layer 20 2 Ultraviolet irradiation dose is 1080mJ/cm 2 Ultraviolet rays having a dominant wavelength of 365nm, to cure the adhesive resin layer 20 by light. Subsequently, the laminate obtained by photocuring the adhesive resin layer 20 was cut into a length of 110mm and a width of 10mm, and the polyethylene terephthalate film as a separator was peeled off from the laminate.
Next, the adhesive resin layer 20 and the ethylene-vinyl acetate copolymer film are sandwiched together by a tensile tester (for example, AUTOGRAPH AGS-X manufactured by shimadzu corporation) so that the initial inter-chuck distance Lo becomes 50 mm. The sample was stretched at a rate of 30 mm/min, and the point at which the adhesive resin layer 20 was visually observed to break was defined as the breaking point, and the distance between chucks at this time was defined as L. The elongation at break (%) was determined from (L-Lo)/Lo X100 (%).
As described above, according to the studies by the present inventors, it has been found that, for example, in the manufacturing process of an electronic device using the precut method, the pre-concealed method, or the like, when the adhesive film is peeled off from the electronic component after the back grinding step, adhesive residue is likely to occur on the electronic component side.
The reason for this is not clear, but it is considered that, unlike the back-grinding step of a general electronic component, the adhesive film 50 needs to be peeled off from the cut electronic component, and therefore adhesive residue is likely to occur at the edge portion of the cut electronic component.
The present inventors have made intensive studies to solve the above problems. The results are found for the first time: by adjusting the elongation at break of the adhesive resin layer 20 after the ultraviolet curing to the above range, it is possible to suppress adhesive residue on the electronic component 30 side when the adhesive film 50 is peeled off from the electronic component 30 after the back grinding step.
In the method of manufacturing the electronic device of the present embodiment, the irradiation dose of ultraviolet rays is 1080mJ/cm 2 The elongation at break of the adhesive resin layer 20 after ultraviolet light of (3) is 20% or more and 200% or less, and from the viewpoint of designing an adhesive resin layer 20 that is less likely to cause adhesive residue by providing the adhesive resin layer 20 with appropriate toughness, it is preferably adjusted to 30% or more, more preferably adjusted to 40% or more, and preferably adjusted to 150% or less, more preferably adjusted to 100% or less, and still more preferably adjusted to 80% or less.
Irradiation ultraviolet dose is 1080mJ/cm 2 The elongation at break of the adhesive resin layer 20 after ultraviolet light can be controlled within the above range by controlling the kind and mixing ratio of the adhesive resin, the crosslinking agent, and the photoinitiator constituting the adhesive resin layer 20, and the kind and content ratio of each monomer in the adhesive resin.
1. Adhesive film
As shown in fig. 1, the adhesive film 50 of the present embodiment includes a base material layer 10 and an ultraviolet-curable adhesive resin layer 20 provided on one surface side of the base material layer 10.
From the viewpoint of the balance between mechanical properties and handling properties, the thickness of the entire adhesive film 50 of the present embodiment is preferably 50 μm to 600 μm, more preferably 50 μm to 400 μm, and still more preferably 50 μm to 300 μm.
The adhesive film 50 of the present embodiment may have other layers such as an uneven absorbent resin layer, an adhesive layer, and an antistatic layer (not shown) between the layers within a range not to impair the effects of the present invention. The uneven absorbency of the adhesive film 50 can be improved by the uneven absorbency resin layer. The adhesive layer can improve the adhesiveness between the layers. In addition, the antistatic layer can improve the antistatic property of the adhesive film 50.
Next, each layer constituting the adhesive film 50 of the present embodiment will be described.
< substrate layer >
The base layer 10 is provided for the purpose of further improving the properties of the adhesive film 50 such as handling properties, mechanical properties, and heat resistance.
The base material layer 10 is not particularly limited as long as it has mechanical strength capable of withstanding external force applied when the electronic component 30 is processed, and examples thereof include resin films.
Examples of the resin constituting the base layer 10 include one or two or more compounds selected from the following compounds: polyolefins such as polyethylene, polypropylene, poly (4-methyl-1-pentene) and poly (1-butene); polyesters such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate; polyamides such as nylon-6, nylon-66, and poly (m-xylylene adipamide); (meth) acrylic resins; polyvinyl chloride; polyvinylidene chloride; a polyimide; a polyetherimide; ethylene-vinyl acetate copolymers; polyacrylonitrile; a polycarbonate; polystyrene; an ionomer; polysulfones; polyether sulfone; polyetheretherketone, and the like.
Among them, from the viewpoint of improving mechanical properties and transparency, one or more selected from the group consisting of polypropylene, polyethylene terephthalate, polyethylene naphthalate, polyamide, polyimide, ethylene-vinyl acetate copolymer and polybutylene terephthalate is preferable, and one or more selected from the group consisting of polyethylene terephthalate and polyethylene naphthalate is more preferable.
The base layer 10 may be a single layer or two or more layers.
The resin film used to form the base material layer 10 may be a stretched film or a film stretched in a uniaxial direction or a biaxial direction, and is preferably a film stretched in a uniaxial direction or a biaxial direction from the viewpoint of improving the mechanical strength of the base material layer 10. From the viewpoint of suppressing warping of the electronic component after grinding, the base layer 10 is preferably subjected to annealing treatment in advance. The base material layer 10 may be surface-treated in order to improve adhesion to other layers. Specifically, corona treatment, plasma treatment, under coat (under coat) treatment, primer coat (primer coat) treatment, and the like may be performed.
From the viewpoint of obtaining good film properties, the thickness of the base layer 10 is preferably 20 μm to 250 μm, more preferably 30 μm to 200 μm, and still more preferably 50 μm to 150 μm.
< adhesive resin layer >
The adhesive film 50 of the present embodiment has the ultraviolet curable adhesive resin layer 20.
The adhesive resin layer 20 is provided on one surface side of the base material layer 10, and is adhered in contact with the circuit-formed surface 30A of the electronic component 30 when the adhesive film 50 is attached to the circuit-formed surface 30A of the electronic component 30.
Examples of the adhesive constituting the adhesive resin layer 20 include a (meth) acrylic adhesive, a silicone adhesive, a urethane adhesive, an olefin adhesive, and a styrene adhesive. Among them, a (meth) acrylic pressure-sensitive adhesive containing a (meth) acrylic resin as a base polymer is preferable in terms of ease of adjustment of the adhesive strength.
As the adhesive constituting the adhesive resin layer 20, an ultraviolet ray-crosslinkable adhesive in which the adhesive force is reduced by ultraviolet rays is preferably used.
Since the adhesive resin layer 20 made of the ultraviolet ray crosslinking type adhesive is crosslinked by irradiation of ultraviolet rays, the adhesive force is significantly reduced, and therefore the electronic component 30 is easily peeled from the adhesive film 50.
Examples of the (meth) acrylic resin contained in the (meth) acrylic adhesive include homopolymers of (meth) acrylate compounds, copolymers of (meth) acrylate compounds and comonomers, and the like. Examples of the (meth) acrylate compound include methyl (meth) acrylate, ethyl (meth) acrylate, butyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, hydroxyethyl (meth) acrylate, hydroxypropyl (meth) acrylate, dimethylaminoethyl (meth) acrylate, and glycidyl (meth) acrylate. These (meth) acrylate compounds may be used singly or in combination of two or more.
Examples of the comonomer constituting the (meth) acrylic copolymer include vinyl acetate, (meth) acrylonitrile, styrene, (meth) acrylic acid, itaconic acid, (meth) acrylamide, methylol (meth) acrylamide, and maleic anhydride. These comonomers may be used singly or in combination of two or more.
Examples of the ultraviolet-crosslinkable (meth) acrylic adhesive include adhesives obtained by crosslinking a (meth) acrylic resin having a polymerizable carbon-carbon double bond in the molecule with a crosslinking agent if necessary, and a photoinitiator. The ultraviolet-crosslinkable (meth) acrylic adhesive may further contain a low-molecular-weight compound having 2 or more polymerizable carbon-carbon double bonds in the molecule.
The (meth) acrylic resin having a polymerizable carbon-carbon double bond in the molecule can be obtained specifically as follows. First, a monomer having an ethylenic double bond and a copolymerizable monomer having a functional group (P) are copolymerized. Next, the functional group (P) contained in the copolymer is reacted with a monomer having a functional group (Q) capable of undergoing an addition reaction, a condensation reaction, or the like with the functional group (P) in a state in which a double bond in the monomer remains, thereby introducing a polymerizable carbon-carbon double bond into the copolymer molecule.
Examples of the monomer having an ethylenic double bond include 1 or 2 or more of monomers having an ethylenic double bond such as methyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, butyl (meth) acrylate, alkyl acrylate and alkyl methacrylate monomers such as ethyl (meth) acrylate, vinyl esters such as vinyl acetate, (meth) acrylonitrile, (meth) acrylamide, and styrene.
Examples of the copolymerizable monomer having the functional group (P) include (meth) acrylic acid, maleic acid, 2-hydroxyethyl (meth) acrylate, glycidyl (meth) acrylate, N-methylol (meth) acrylamide, and (meth) acryloyloxyethyl isocyanate. These can be used in 1 kind, also can be used in 2 or more combinations.
The proportion of the monomer having an ethylenic double bond to the copolymerizable monomer having a functional group (P) is preferably 70 to 99% by mass of the monomer having an ethylenic double bond and 1 to 30% by mass of the copolymerizable monomer having a functional group (P). More preferably, the content of the monomer having an ethylenic double bond is 80 to 95% by mass, and the content of the copolymerizable monomer having a functional group (P) is 5 to 20% by mass.
Examples of the monomer having the functional group (Q) include the same monomers as those of the copolymerizable monomer having the functional group (P).
The combination of the functional group (P) and the functional group (Q) which react when a polymerizable carbon-carbon double bond is introduced into the copolymer of the monomer having an ethylenic double bond and the copolymerizable monomer having the functional group (P) is preferably a combination in which an addition reaction is easily caused between a carboxyl group and an epoxy group, between a carboxyl group and an aziridine group, between a hydroxyl group and an isocyanate group, or the like. In addition, any reaction may be used as long as it is a reaction in which a polymerizable carbon-carbon double bond can be easily introduced, such as a condensation reaction of a carboxylic acid group and a hydroxyl group, without being limited to the addition reaction.
Examples of the low molecular weight compound having 2 or more polymerizable carbon-carbon double bonds in the molecule include tripropylene glycol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, tetramethylolmethane tetraacrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, ditrimethylolpropane tetraacrylate, and the like. These may be used in 1 or 2 or more. The amount of the low-molecular-weight compound having 2 or more polymerizable carbon-carbon double bonds in the molecule is preferably 0.1 to 20 parts by mass, and more preferably 5 to 18 parts by mass, based on 100 parts by mass of the (meth) acrylic resin.
Examples of the photoinitiator include benzoin, isopropylbenzoin ether, isobutylbenzoin ether, benzophenone, michler's ketone, chlorothioxanthone, dodecylthioxanthone, dimethylthioxanthone, diethylthioxanthone, acetophenone diethyl ketal, benzil dimethyl ketal, 1-hydroxycyclohexyl phenyl ketone, 2-hydroxy-2-methyl-1-phenylpropan-1-one, 2-benzyl-2-dimethylamino-4' -morpholinobutyrophenone, 2-dimethoxy-2-phenylacetophenone, and 2-dimethylamino-2- (4-methylbenzyl) -1- (4-morpholin-4-yl-phenyl) butan-1-one. These may be used in 1 or 2 or more. The amount of the photoinitiator added is preferably 0.1 to 15 parts by mass, more preferably 1 to 10 parts by mass, and still more preferably 4 to 10 parts by mass, based on 100 parts by mass of the (meth) acrylic resin.
A crosslinking agent may be added to the ultraviolet curable adhesive. Examples of the crosslinking agent include epoxy compounds such as sorbitol polyglycidyl ether, polyglycerol polyglycidyl ether, pentaerythritol polyglycidyl ether, and diglycerol polyglycidyl ether, aziridine compounds such as tetramethylolmethane-tri- β -aziridinylpropionate, trimethylolpropane-tri- β -aziridinylpropionate, N ' -diphenylmethane-4, 4' -bis (1-aziridinecarboxamide) and N, N ' -hexamethylene-1, 6-bis (1-aziridinecarboxamide), and isocyanate compounds such as tetramethylene diisocyanate, hexamethylene diisocyanate, and polyisocyanate. The ultraviolet curable adhesive may be any of solvent type, emulsion type, hot melt type, and the like.
The content of the crosslinking agent is generally preferably within a range in which the number of functional groups in the crosslinking agent is not more than the number of functional groups in the (meth) acrylic resin. However, if necessary, an excessive amount of the functional group may be contained, for example, when a new functional group is generated during the crosslinking reaction or when the crosslinking reaction is slow.
From the viewpoint of improving the balance between the heat resistance and the adhesion of the adhesive resin layer 20, the content of the crosslinking agent in the (meth) acrylic adhesive is preferably 0.1 part by mass or more and 15 parts by mass or less, and more preferably 0.5 part by mass or more and 5 parts by mass or less, with respect to 100 parts by mass of the (meth) acrylic resin.
The adhesive resin layer 20 can be formed by applying an adhesive coating liquid on the base layer 10, for example.
As a method for applying the adhesive coating liquid, for example, a conventionally known coating method such as a roll coater method, a reverse roll coater method, a gravure roll method, a bar coater method, a comma coater method, or a die coater method can be used. The drying conditions of the applied adhesive are not particularly limited, but generally, the adhesive is preferably dried at a temperature ranging from 80 to 200 ℃ for 10 seconds to 10 minutes. Further preferably, the drying is carried out at 80 to 170 ℃ for 15 seconds to 5 minutes. In order to sufficiently promote the crosslinking reaction between the crosslinking agent and the (meth) acrylic resin, the adhesive coating solution may be heated at 40 to 80 ℃ for about 5 to 300 hours after the completion of drying.
In the adhesive film 50 of the present embodiment, the thickness of the adhesive resin layer 20 is preferably 5 μm to 300 μm, more preferably 10 μm to 100 μm, and still more preferably 10 μm to 50 μm. If the thickness of the adhesive resin layer 20 is within the above range, the balance between the adhesiveness to the surface of the electronic component 30 and the handling property is good.
2. Method for manufacturing electronic device
The method of manufacturing an electronic device according to the present embodiment includes at least the following 3 steps.
(A) A step of preparing a structure 100, the structure 100 including an electronic component 30 having a circuit forming surface 30A and an adhesive film 50 attached to the electronic component 30 on the circuit forming surface 30A side
(B) A step of back-grinding a surface of the electronic component 30 opposite to the circuit forming surface 30A side
(C) Step of irradiating the adhesive film 50 with ultraviolet rays and then removing the adhesive film 50 from the electronic component 30
Further, the present invention has the following features: ultraviolet irradiation dose of 1080mJ/cm 2 The elongation at break of the adhesive resin layer 20 after the ultraviolet light is 20% to 200%.
Hereinafter, each step of the method for manufacturing an electronic device according to the present embodiment will be described.
(Process (A))
First, a structure 100 is prepared, the structure 100 including an electronic component 30 having a circuit formation surface 30A and an adhesive film 50 attached to the electronic component 30 on the circuit formation surface 30A side.
Such a structure 100 can be produced, for example, by peeling a release film from the adhesive resin layer 20 of the adhesive film 50 to expose the surface of the adhesive resin layer 20, and attaching the circuit formation surface 30A of the electronic component 30 to the adhesive resin layer 20.
Here, conditions for bonding the circuit forming surface 30A of the electronic component 30 to the adhesive film 50 are not particularly limited, and for example, the temperature may be 20 to 80 ℃, the pressure may be 0.05 to 0.5MPa, and the bonding speed may be 0.5 to 20 mm/sec.
Preferably, the step (a) further includes a step (A1) and a step (A2), the step (A1) being at least one selected from the step (A1-1) of half-cutting the electronic component 30 and the step (A1-2) of irradiating the electronic component 30 with a laser beam to form a modified layer on the electronic component 30, and in the step (A2), the adhesive film 50 is attached to the circuit forming surface 30A side of the electronic component 30 after the step (A1).
As described above, in the manufacturing process of the electronic device using the precut method, the pre-concealing method, or the like, when the adhesive film 50 is peeled off from the electronic component 30 after the back grinding process, the adhesive residue is likely to be generated on the electronic component 30 side, and therefore, the manufacturing method of the electronic device of the present embodiment can be suitably applied to the manufacturing process of the electronic device using the precut method, the pre-concealing method, or the like. Therefore, the production method is preferably performed by performing the step (A1-1) as a precut method and the step (A1-2) as a pre-concealment method.
In the step (A2), the adhesive film 50 may be heated to be adhered to the circuit-formed surface 30A of the electronic component 30. This makes it possible to improve the adhesion state between the adhesive resin layer 20 and the electronic component 30 for a long period of time. The heating temperature is not particularly limited, and is, for example, 60 to 80 ℃.
The operation of attaching the adhesive film 50 to the electronic component may be performed manually, but it is generally performed by a device called an automatic bonding machine in which a roll-shaped adhesive film is attached.
The electronic component 30 attached to the adhesive film 50 is not particularly limited, and is preferably an electronic component 30 having a circuit-formed surface 30A. Examples thereof include a semiconductor wafer, an epoxy molded wafer, a molded panel, a molded array package, and a semiconductor substrate, and the semiconductor wafer and the epoxy molded wafer are preferable.
Examples of the semiconductor wafer include a silicon wafer, a sapphire wafer, a germanium-arsenic wafer, a gallium-phosphorus wafer, a gallium-arsenic-aluminum wafer, a gallium-arsenic wafer, a lithium tantalate wafer, and the like, and the semiconductor wafer is suitably used for a silicon wafer. As the epoxy resin molded Wafer, a Wafer manufactured by an eWLB (Embedded Wafer Level Ball Grid Array) process, which is one of fan-out (fan-out) type WLP manufacturing methods, can be cited.
The semiconductor wafer and the epoxy resin molded wafer having a circuit formation surface are not particularly limited, and may be used, for example, as a wafer having a circuit such as a wiring, a capacitor, a diode, or a transistor formed on a surface thereof. Further, the circuit formation surface may be subjected to plasma treatment.
The circuit formation surface 30A of the electronic component 30 may be formed into a concave-convex surface by having bump electrodes or the like, for example.
The bump electrode is, for example, an object which is bonded to an electrode formed on a mounting surface when the electronic device is mounted on the mounting surface, and which forms an electrical connection between the electronic device and the mounting surface (mounting surface of a printed circuit board or the like).
Examples of the bump electrode include bump electrodes such as a ball bump, a printed bump, a stud bump, a plated bump, and a stud bump. That is, the bump electrode is typically a convex electrode. These bump electrodes may be used alone in 1 kind, or may be used in combination in 2 or more kinds.
The height and diameter of the bump electrode are not particularly limited, but are preferably 10 to 400 μm, and more preferably 50 to 300 μm, respectively. The bump pitch is also not particularly limited, and is preferably 20 to 600 μm, and more preferably 100 to 500 μm.
The kind of metal constituting the bump electrode is not particularly limited, and examples thereof include solder, silver, gold, copper, tin, lead, bismuth, and alloys thereof, and the adhesive film 50 is suitably used when the bump electrode is a solder bump. These metal species may be used alone in 1 kind, or may be used in combination in 2 or more kinds.
(Process (B))
Next, a surface (also referred to as a back surface) of the electronic component 30 opposite to the circuit forming surface 30A side is subjected to back grinding.
Here, the back grinding means thinning to a predetermined thickness without damaging the electronic component.
For example, the structure 100 is fixed to a chuck table of a grinding machine or the like, and the back surface (non-circuit-formed surface) of the electronic component is ground.
In such a back grinding operation, the electronic component 30 is ground to a thickness equal to or less than a desired thickness. The thickness of the electronic component before grinding is appropriately determined according to the diameter, the kind, and the like of the electronic component 30, and the thickness of the electronic component 30 after grinding is appropriately determined according to the size of the obtained chip, the kind of the circuit, and the like.
When the electronic component 30 is half-cut or irradiated with laser light to form a modified layer, the electronic component 30 is singulated through step (B) as shown in fig. 1.
The back grinding method is not particularly limited, and a known grinding method can be used. Each grinding may be performed while applying water to the electronic component and the grinding stone to cool them. If necessary, a dry grinding process, which is a grinding method using no grinding water, may be performed at the end of the grinding process. After the back grinding is finished, chemical etching is performed as required. The chemical etching is performed by, for example, immersing the electronic component in an etching solution selected from the group consisting of an acidic aqueous solution formed by hydrofluoric acid, nitric acid, sulfuric acid, acetic acid, or the like alone or a mixture thereof, and an alkaline aqueous solution formed by potassium hydroxide aqueous solution, sodium hydroxide aqueous solution, or the like, with the adhesive film 50 attached thereto. The etching is performed for the purpose of removing strain generated on the back surface of the electronic component, thinning the electronic component, removing an oxide film and the like, and pre-treatment when forming an electrode on the back surface. The etching solution can be selected appropriately according to the purpose.
(Process (C))
Next, the adhesive film 50 is irradiated with ultraviolet rays, and then the adhesive film 50 is removed from the electronic component 30. In the step (C), the adhesive film 50 is irradiated with, for example, 200mJ/cm 2 Above 2000mJ/cm 2 Ultraviolet rays of the following dose, thereby photo-curing the adhesive resin layer 20 to reduce the adhesive force of the adhesive resin layer 20, and then removing the adhesive film 50 from the electronic component 30.
The ultraviolet irradiation can be performed using, for example, a high-pressure mercury lamp and using ultraviolet rays having a dominant wavelength of 365 nm.
The intensity of ultraviolet ray irradiation is, for example, 50mW/cm 2 Above 500mW/cm 2 The following.
Before the adhesive film is removed from the electronic component 30, the electronic component 30 may be mounted on a dicing tape, or a dicing tape with a die bonding film. The operation of removing the adhesive film 50 from the electronic component 30 may be performed manually, but may be performed by a device called an automatic peeling machine.
The surface of the electronic component 30 after the adhesive film 50 is peeled off may be cleaned as necessary. Examples of the cleaning method include wet cleaning such as water cleaning and solvent cleaning, and dry cleaning such as plasma cleaning. In the wet cleaning, ultrasonic cleaning may be used in combination. These cleaning methods can be appropriately selected depending on the contamination condition of the surface of the electronic component.
(other steps)
After the steps (a) to (C), a step of mounting the obtained semiconductor chip on a circuit board may be further performed. These steps can be performed based on known information.
While the preferred embodiments of the present invention have been described above, these are illustrative of the present invention, and various configurations other than the above-described configurations may be adopted.
Examples
The present invention will be specifically described below with reference to examples and comparative examples, but the present invention is not limited thereto.
Details regarding the production of the adhesive film are as follows.
< substrate layer >
Substrate layer 1: polyethylene terephthalate film (manufactured by Toyo Boseki Co., ltd., product name: E7180, thickness: 50 μm, single-side corona-treated product)
Substrate layer 2: laminate film (total thickness: 110 μm) comprising Low-Density polyethylene film/polyethylene terephthalate film/Low-Density polyethylene film
A low-density polyethylene film (density: 0.925 kg/m) was laminated on both sides of a polyethylene terephthalate film (manufactured by Toray corporation, product name: LUMIRROR S10, thickness: 50 μm) 3 Thickness: 30 μm). One side of the obtained laminated film was subjected to corona treatment.
Substrate layer 3: laminate film formed of polyethylene terephthalate film/ethylene-vinyl acetate copolymer film/acrylic resin film (total thickness: 145 μm)
A polyethylene terephthalate film (manufactured by Toyo Co., ltd., product name: E7180, thickness: 50 μm) and an ethylene-vinyl acetate copolymer (manufactured by Mitsui DOW POLYCHEMICALS Co., ltd., MFR:2.5g/10 min) film (thickness: 70 μm) were laminated by subjecting the side of the ethylene-vinyl acetate copolymer film to corona treatment, the side being in contact with the polyethylene terephthalate film. Further, the ethylene-vinyl acetate copolymer film was subjected to corona discharge treatment on the side opposite to the polyethylene terephthalate film.
Next, on the release surface of the polyethylene terephthalate film (separator) subjected to the release treatment, a base material shown below was coated with an acrylic resin coating solution so that the dry thickness became 20 μm, dried, and adhered to the laminated film composed of the polyethylene terephthalate film/ethylene-vinyl acetate copolymer film via the ethylene-vinyl acetate copolymer film, followed by aging (40 ℃,3 days). Next, the separator was peeled off to obtain a base material layer 3.
< acrylic resin coating liquid for substrate >
Using 0.5 part by mass of 4,4' -azobis-4-cyanovaleric acid (available from Otsuka chemical Co., ltd.; product name: ACVA) as a polymerization initiator, 74 parts by mass of butyl acrylate, 14 parts by mass of methyl methacrylate, 9 parts by mass of 2-hydroxyethyl methacrylate, 2 parts by mass of methacrylic acid, 1 part by mass of acrylamide, and 3 parts by mass of an aqueous solution of ammonium polyoxyethylene nonylphenyl ether sulfate (available from first Industrial pharmaceutical Co., ltd.; product name: AQUARON HS-1025) were emulsion-polymerized in deionized water at 70 ℃ for 9 hours. After completion of the polymerization, the pH was adjusted to pH =7 with aqueous ammonia, and an acrylic polymer aqueous emulsion having a solid content of 42.5% was obtained. Then, a coating liquid for a substrate was obtained by adjusting pH =9 or more using aqueous ammonia with respect to 100 parts by mass of the acrylic polymer aqueous emulsion, and blending 0.75 part by mass of an aziridine-based crosslinking agent [ CHEMICITE PZ-33, manufactured by Japan catalyst chemical industry ], and 5 parts by mass of diethylene glycol monobutyl ether.
(meth) acrylic resin solution
(meth) acrylic resin solution 1:
49 parts by mass of ethyl acrylate, 20 parts by mass of 2-ethylhexyl acrylate, 21 parts by mass of methyl acrylate, 10 parts by mass of glycidyl methacrylate, and 0.5 part by mass of a benzoyl peroxide polymerization initiator as a polymerization initiator were reacted at 80 ℃ for 10 hours in 65 parts by mass of toluene and 50 parts by mass of ethyl acetate. After the reaction was completed, the obtained solution was cooled, 25 parts by mass of xylene, 5 parts by mass of acrylic acid and 0.5 part by mass of tetradecyldimethylbenzylammonium chloride were added to the cooled solution, and the reaction was carried out at 85 ℃ for 32 hours while blowing air to obtain a (meth) acrylic resin solution 1.
(meth) acrylic resin solution 2:
77 parts by mass of n-butyl acrylate, 16 parts by mass of methyl methacrylate, 16 parts by mass of 2-hydroxyethyl acrylate, and 0.3 part by mass of tert-butyl peroxy-2-ethylhexanoate as a polymerization initiator were reacted at 85 ℃ for 10 hours in 20 parts by mass of toluene and 80 parts by mass of ethyl acetate. After the reaction, the solution was cooled, 30 parts by mass of toluene, 7 parts by mass of methacryloyloxyethyl isocyanate (manufactured by Showa Denko K.K., product name: karenzMOI), and 0.05 part by mass of dibutyltin dilaurate were added thereto, and the reaction was carried out at 85 ℃ for 12 hours while blowing air to obtain (meth) acrylic resin solution 2.
(meth) acrylic resin solution 3:
30 parts by mass of ethyl acrylate, 11 parts by mass of methyl acrylate, 26 parts by mass of 2-ethylhexyl acrylate, 7 parts by mass of 2-hydroxyethyl methacrylate, and 0.8 part by mass of a benzoyl peroxide polymerization initiator as a polymerization initiator were reacted at 80 ℃ for 9 hours in 7 parts by mass of toluene and 50 parts by mass of ethyl acetate. After the reaction was completed, the obtained solution was cooled, and 25 parts by mass of toluene was added to the cooled solution to obtain a (meth) acrylic resin solution 3.
< adhesive film for evaluation of elongation at Break >
Additives shown in table 1 were added to the acrylic resin solution, thereby preparing an adhesive coating liquid for an adhesive resin layer. This coating liquid was applied to the release-treated surface of a polyethylene terephthalate film (separator) subjected to silicone release treatment, and dried at 120 ℃ for 3 minutes to form an adhesive resin layer having a thickness of 20 μm. Next, a corona-treated surface of an ethylene-vinyl acetate copolymer extruded film (MFR: 1.7g/10min, vinyl acetate content: 9 mass%, thickness: 140 μm) subjected to corona treatment was attached to the adhesive resin layer to obtain a laminate. Subsequently, the obtained laminate was heated in an oven at 40 ℃ for 3 days to cure it.
< adhesive film for adhesion and precut evaluation >
Additives shown in table 1 were added to the acrylic resin solution, thereby preparing an adhesive coating liquid for an adhesive resin layer. This coating liquid was applied to a polyethylene terephthalate film (separator) subjected to a silicone release treatment. Then, the substrate was dried at 120 ℃ for 3 minutes to form an adhesive resin layer having a thickness of 20 μm and attached to the base material layer. The base material layers 1 and 2 were bonded to the corona-treated surfaces. The substrate layer 3 was peeled off and attached to the acrylic resin layer side. The obtained laminate was heated in an oven at 40 ℃ for 3 days to cure it.
< evaluation method >
(1) Elongation at break of ultraviolet-cured adhesive resin layer
From the ethylene-vinyl acetate copolymer extruded film side of the adhesive film for evaluation of elongation at break, a high pressure mercury lamp was used at an irradiation intensity of 100mW/cm at 25 ℃ to the adhesive resin layer 2 Ultraviolet irradiation dose is 1080mJ/cm 2 Dominant wavelength of 365 nm. Subsequently, the laminate was cut into a length of 110mm and a width of 10mm, and the polyethylene terephthalate film as a separator was peeled off from the laminate.
Subsequently, the pressure-sensitive adhesive resin layer and the ethylene-vinyl acetate copolymer extruded film were sandwiched together with a tensile tester (product name: AUTOGRAPH AGS-X, manufactured by Shimadzu corporation) so that the initial distance between chucks Lo became 50 mm. The sample was stretched at a rate of 30 mm/min, and the point at which the adhesive resin layer was visually observed to break was defined as the breaking point, and the distance between chucks at this time was defined as L. The elongation at break (%) was determined from (L-Lo)/Lo X100 (%). The evaluation was performed with N =2, and the values were averaged to obtain a measurement value.
(2) Evaluation of adhesive force
Adherend wafer:
the mirror surface of the silicon mirror wafer (4-inch single-sided mirror wafer) was subjected to ozone cleaning (ozone treatment time: 60 seconds) by a UV ozone cleaning apparatus (UV-208, manufactured by technoviion). Then, the mirror surface of the wafer was wiped with ethanol, and the wiped wafer was used as an adherend wafer.
Adhesion before ultraviolet irradiation:
the adhesive film for evaluation of adhesive force was cut into a lateral width of 50mm in an environment of 23 ℃ and 50% RH, the separator was peeled off, the adhesive film was attached to the mirror surface of the adherend wafer via the adhesive resin layer using a hand roller, and the resultant was left to stand for 1 hour. After the placement, one end of the adhesive film was held by a tensile tester (product name: AUTOGRAPH AGS-X, manufactured by Shimadzu corporation) at a peel angle: 180 degrees, peeling speed: the adhesive film was peeled off from the surface of the adherend wafer at 300 mm/min. The stress at this time was measured and converted to N/25mm to determine the adhesive force. The evaluation was performed with N =2, and the values were averaged to obtain a measurement value.
Adhesion after ultraviolet irradiation:
the adhesive film for evaluation of adhesive force was cut into a lateral width of 50mm in an environment of 23 ℃ and 50% RH, the separator was peeled off, the adhesive film was attached to the mirror surface of the adherend wafer via the adhesive resin layer using a hand roller, and the resultant was left to stand for 1 hour. After leaving, the resultant was irradiated at an irradiation intensity of 100mW/cm using a high pressure mercury lamp at 25 ℃ in an atmosphere 2 Irradiating the adhesive film with ultraviolet rays at a dose of 1080mJ/cm 2 And a dominant wavelength of 365 nm. Then, one end of the adhesive film was held between the films using a tensile tester (product name: AUTOGRAPH AGS-X, manufactured by Shimadzu corporation) at a peel angle: 180 degrees, peeling speed: the adhesive film was peeled off from the surface of the adherend wafer at 300 mm/min. The stress at this time was measured and converted to N/25mm to determine the adhesive force. The evaluation was performed with N =2, and the values were averaged to obtain a measurement value.
And (3) residual gum evaluation:
the adherend wafer after the peeling was visually observed and evaluated according to the following criteria.
Good (good): no residual gum was confirmed
X (poor): the residual gum was confirmed
(3) Evaluation by precutting method
Evaluation of wafer 1:
the mirror surface of a mirror wafer (8-inch mirror wafer, diameter: 200. + -. 0.5mm, thickness: 725. + -.50 μm, single-sided mirror) was half-cut using a dicing saw to obtain an evaluation wafer 1. (blade: ZH05-SD3500-N1-70-DD, chip size: 5mm. Times.8 mm, depth of cut: 58 μm, blade rotation speed: 30000 rpm). The evaluation wafer 1 was observed by an optical microscope, and the notch width was 35 μm.
Evaluation of wafer 2:
the mirror surface of the mirror wafer (8-inch mirror wafer, diameter: 200. + -. 0.5mm, thickness: 725. + -.50 μm, single-sided mirror surface) was half-cut at stage 1 using a dicing saw (blade: Z09-SD 2000-Y158X 0.25A X40X 45E-L, chip size: 5mm X8 mm, depth of cut: 15 μm, blade rotation speed: 30000 rpm). The incision width was 60 μm as a result of observation with an optical microscope. Next, half-dicing at stage 2 was performed (blade: ZH05-SD3500-N1-70-DD, chip size: 5mm. Times.8 mm, depth of cut: 58 μm, blade rotation speed: 30000 rpm), and evaluation wafer 2 was obtained.
Pre-cutting method:
the precut adhesive film for evaluation was attached to the half-cut surface of the evaluation wafer using a tape laminator (DR 3000II, manufactured by Nindon electric Co., ltd.) (23 ℃ C., attachment speed: 5 mm/min, attachment pressure: 0.36 MPa).
Next, the wafer was subjected to back grinding (rough grinding and precision grinding, precision grinding amount: 40 μm, no polishing, thickness after grinding: 38 μm) using a grinder (manufactured by DISCO Co., ltd., DGP 8760) and was singulated.
Regarding chip scattering during precut, evaluation was performed by visual observation according to the following criteria after back grinding was performed.
Good (good): no chip scattering was observed including the triangular corner portion
X (poor): chip scattering was confirmed including the triangular corner portion
Further, UV irradiation and peeling of the adhesive film for pre-cut evaluation were performed to evaluate the residual gum after the pre-cut method.
In the UV irradiation, a high-pressure mercury lamp was used at an irradiation intensity of 100mW/cm in an environment of 25 deg.C 2 Irradiation of ultraviolet dose to precut adhesive film for evaluation of 1080mJ/cm 2 And a dominant wavelength of 365 nm.
Peeling of the adhesive film for precut evaluation was performed in the following order. First, a dicing tape (used as a mounting tape) prepared separately was attached to the wafer side of the singulated wafer and the 8-inch circular frame for wafer via the adhesive surface of the dicing tape using a wafer mounter (MSA 300, manufactured by ritto electric corporation). Next, the pre-cut adhesive film for evaluation was peeled from the wafer cut groove portion by peeling off an adhesive tape (PET 38REL, manufactured by lathing systems) using a tape peeling machine (HR 3000III, manufactured by hitong electric corporation). The device releasability was evaluated according to the following criteria.
Good (good): the pre-cut adhesive film for evaluation can be peeled from the wafer 1 time
X (poor): the pre-cut adhesive film could not be peeled from the wafer 1 time
The residual glue on the singulated wafer after the precut method was evaluated by an optical microscope (manufactured by olympus) according to the following criteria.
Good (good): no residual gum was confirmed
X (poor): the residual gum was confirmed
[ example 1]
6.9 parts by mass of 2, 2-dimethoxy-2-phenylacetophenone (trade name: OMNIRAD 651, manufactured by IGM Co.) and 0.93 part by mass of an isocyanate-based crosslinking agent (trade name: olester P49-75S, manufactured by Mitsui chemical Co., ltd.) were added to 100 parts by mass of (meth) acrylic resin solution 1 (solid content) to obtain an adhesive coating solution 1 for an adhesive resin layer. By the above method, an adhesive film for evaluation of elongation at break, an adhesive film for evaluation of adhesive force, and an adhesive film for evaluation of precut were produced. In addition, based on the previously described evaluation methods, the elongation at break, the adhesive force evaluation, and the precut evaluation of the adhesive material after the ultraviolet curing were performed. The results are shown in Table 1.
Examples 2 to 10 and comparative examples 1 and 2
Adhesive films were produced in the same manner as in example 1, except that the types of the adhesive resin layer and the base material layer were changed to those shown in table 1. In addition, each evaluation was performed in the same manner as in example 1. The results are shown in table 1.
The compounds shown in table 1 are as follows.
OMNIRAD 651 (manufactured by IGM): 2, 2-dimethoxy-2-phenylacetophenone
OMNIRAD 369 (manufactured by IGM Co.): 2-benzyl-2-dimethylamino-4' -morpholinobutyrophenone
ARONIX M400 (manufactured by east asian synthesis corporation): mixture of dipentaerythritol pentaacrylate and dipentaerythritol hexaacrylate
NK ester AD-TMP (manufactured by Ningmura chemical industries Co., ltd.): di (trimethylolpropane) tetraacrylate
[ Table 1]
Figure BDA0003990509100000201
The present application claims priority based on Japanese application No. 2020-101092 filed on 6/10/2020, the disclosure of which is hereby incorporated by reference in its entirety.
Description of the symbols
10: substrate layer
20: adhesive resin layer
30: electronic component
30A: circuit forming surface
50: adhesive film
100: a structure body.

Claims (6)

1. A method of manufacturing an electronic device, comprising:
a step (A) of preparing a structure including an electronic component having a circuit-formed surface and an adhesive film adhered to the circuit-formed surface side of the electronic component;
a step (B) of back-grinding a surface of the electronic component opposite to the circuit forming surface side; and
a step (C) of irradiating the adhesive film with ultraviolet rays and then removing the adhesive film from the electronic component,
the adhesive film comprises a base material layer and an ultraviolet-curable adhesive resin layer provided on one surface side of the base material layer,
irradiation ultraviolet dose is 1080mJ/cm 2 The elongation at break of the adhesive resin layer after ultraviolet light of (3) is 20% to 200%.
2. The method of manufacturing an electronic device according to claim 1,
the step (A) includes:
a step (A1) of at least one selected from the step (A1-1) of half-cutting the electronic component and the step (A1-2) of irradiating the electronic component with a laser beam to form a modified layer on the electronic component; and
and (A2) bonding the adhesive film to the circuit forming surface side of the electronic component after the step (A1).
3. The method of manufacturing an electronic device according to claim 1 or 2,
in the step (C), the adhesive film is irradiated with 200mJ/cm 2 Above 2000mJ/cm 2 Ultraviolet rays in an amount such that the adhesive resin layer is photocured to decrease the adhesive force of the adhesive resin layer, and then the adhesive film is removed from the electronic component.
4. The method of manufacturing an electronic device according to any one of claims 1 to 3,
the adhesive resin layer contains a (meth) acrylic resin having a polymerizable carbon-carbon double bond in the molecule and a photoinitiator.
5. The method of manufacturing an electronic device according to any one of claims 1 to 4,
the thickness of the adhesive resin layer is 5 [ mu ] m to 300 [ mu ] m.
6. The method of manufacturing an electronic device according to any one of claims 1 to 5,
the resin constituting the base material layer contains one or more selected from the group consisting of polyolefin, polyester, polyamide, polyacrylate, polymethacrylate, polyvinyl chloride, polyvinylidene chloride, polyimide, polyetherimide, ethylene-vinyl acetate copolymer, polyacrylonitrile, polycarbonate, polystyrene, ionomer, polysulfone, polyethersulfone, and polyphenylene oxide.
CN202180041878.8A 2020-06-10 2021-06-09 Method for manufacturing electronic device Pending CN115702480A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020-101092 2020-06-10
JP2020101092 2020-06-10
PCT/JP2021/021865 WO2021251420A1 (en) 2020-06-10 2021-06-09 Method for producing electronic device

Publications (1)

Publication Number Publication Date
CN115702480A true CN115702480A (en) 2023-02-14

Family

ID=78845706

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180041878.8A Pending CN115702480A (en) 2020-06-10 2021-06-09 Method for manufacturing electronic device

Country Status (5)

Country Link
JP (1) JP7440632B2 (en)
KR (1) KR20230008803A (en)
CN (1) CN115702480A (en)
TW (1) TW202212513A (en)
WO (1) WO2021251420A1 (en)

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4707805B2 (en) * 2000-08-08 2011-06-22 三井化学株式会社 Adhesive film for protecting semiconductor wafer surface and method for protecting semiconductor wafer surface using the same
JP2009035635A (en) 2007-08-01 2009-02-19 Nitto Denko Corp Stain resistant heat peelable adhesive sheet
JP5069662B2 (en) 2007-11-12 2012-11-07 リンテック株式会社 Adhesive sheet
US20110045290A1 (en) * 2008-03-03 2011-02-24 Lintec Corporation Adhesive Sheet
JP5582836B2 (en) * 2010-03-26 2014-09-03 古河電気工業株式会社 Dicing die bonding tape
JP6059499B2 (en) 2012-10-05 2017-01-11 リンテック株式会社 Surface protection sheet
JP6287200B2 (en) 2013-12-27 2018-03-07 日立化成株式会社 Dicing tape for dicing and die bonding integrated tape
JP5823591B1 (en) 2014-10-01 2015-11-25 古河電気工業株式会社 Adhesive tape for protecting semiconductor wafer surface and method for processing semiconductor wafer
CN107112230A (en) 2015-03-16 2017-08-29 古河电气工业株式会社 Semiconductor crystal wafer processing adhesive tape
KR20180066043A (en) * 2015-10-05 2018-06-18 린텍 가부시키가이샤 Semiconductor processing sheet
JP6404501B2 (en) * 2016-07-26 2018-10-10 三井化学東セロ株式会社 Manufacturing method of semiconductor device
JP2018115332A (en) * 2018-03-20 2018-07-26 リンテック株式会社 Pressure-sensitive adhesive tape and production method of semiconductor device

Also Published As

Publication number Publication date
TW202212513A (en) 2022-04-01
WO2021251420A1 (en) 2021-12-16
JP7440632B2 (en) 2024-02-28
JPWO2021251420A1 (en) 2021-12-16
KR20230008803A (en) 2023-01-16

Similar Documents

Publication Publication Date Title
CN115702480A (en) Method for manufacturing electronic device
CN115699263A (en) Method for manufacturing electronic device
WO2022019166A1 (en) Method for producing electronic device
WO2022019160A1 (en) Method for producing electronic device
WO2022019158A1 (en) Adhesive film for back grinding , and electronic device manufacturing method
WO2021215247A1 (en) Back-grinding adhesive film, and electronic device manufacturing method
WO2022250129A1 (en) Method for producing electronic device
WO2022250138A1 (en) Adhesive film for backgrinding and production method for electronic device
WO2022250137A1 (en) Method for producing electronic device
WO2022250132A1 (en) Method for producing electronic device
WO2022250133A1 (en) Method for producing electronic device
WO2022250131A1 (en) Method for producing electronic device
WO2022250128A1 (en) Back grinding adhesive film and method for producing electronic device
WO2022250136A1 (en) Method for producing electronic device
KR20240005909A (en) Manufacturing method of adhesive film and electronic device for backgrinding

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination