JP6789500B2 - Dicing / die bonding integrated film and its manufacturing method, and semiconductor device manufacturing method - Google Patents

Description

The present disclosure relates to a dicing / die bonding integrated film and a method for manufacturing the same, and a method for manufacturing a semiconductor device using the film.

The semiconductor device is manufactured through the following steps. First, the dicing step is carried out with the adhesive film for dicing attached to the wafer. After that, an expanding step, a picking step, a mounting step, a die bonding step and the like are carried out.

In the manufacturing process of semiconductor devices, a film called a dicing / die bonding integrated film is used. This film has a structure in which a base material layer, an adhesive layer, and an adhesive layer are laminated in this order, and is used, for example, as follows. First, the surface on the adhesive layer side is attached to the wafer, and the wafer is diced with the wafer fixed by the dicing ring. As a result, the wafer is fragmented into a large number of chips. Subsequently, after weakening the adhesive force of the adhesive layer against the adhesive layer by irradiating the adhesive layer with ultraviolet rays, the chip is separated from the adhesive layer together with the adhesive piece obtained by separating the adhesive layer. Pick up. After that, the semiconductor device is manufactured through a step of mounting the chip on a substrate or the like via an adhesive piece. A laminate composed of a chip obtained through a dicing step and an adhesive piece attached to the chip is referred to as DAF (Die Attach Film).

As described above, the adhesive layer (dicing film) whose adhesive strength is weakened by irradiation with ultraviolet rays is called a UV curable type. On the other hand, in the manufacturing process of a semiconductor device, a pressure-sensitive adhesive layer in which the adhesive strength remains constant without being irradiated with ultraviolet rays is called a pressure-sensitive type. The dicing / die bonding integrated film having a pressure-sensitive adhesive layer does not require a process of irradiating ultraviolet rays for users (mainly semiconductor device manufacturers), and does not require equipment for this purpose. There are merits. Patent Document 1 can be said to be a UV curable type in that the pressure-sensitive adhesive layer contains a component that is cured by ultraviolet rays, while only a predetermined portion of the pressure-sensitive adhesive layer is preliminarily irradiated with ultraviolet rays, and the user can use the semiconductor device. Disclosed is a dicing die bond film which can be said to be a pressure sensitive type in that it does not need to be irradiated with ultraviolet rays in the manufacturing process.

Japanese Patent No. 4443962

The adhesive layer of the dicing die bond integrated film is required to have high adhesive strength to the adhesive layer and the dicing ring in the dicing process. If the adhesive strength of the adhesive layer is insufficient, peeling occurs between the adhesive layer and the adhesive layer as the dicing blade rotates at high speed, and the chip flies together with the adhesive piece (hereinafter referred to as "DAF"). The dicing ring is peeled off from the adhesive layer due to the flow of cutting water (hereinafter, this phenomenon is referred to as "ring peeling"). The present inventors have focused on the fact that these phenomena become more prominent as the size of the chip to be produced by dicing decreases. The present inventors have explained that the main reason why these phenomena become remarkable is that as the size of the chip becomes smaller, it takes a longer time for dicing as compared with the conventional one, and the wafer in the middle of cutting and the chip after cutting become longer. It is presumed that this is due to the impact of the dicing blade and exposure to cutting water for a long time.

Therefore, the present inventors can apply it to a step of dicing a wafer into a large number of small chips (area 9 mm ² or less), and a predetermined amount of active energy rays (for example, ultraviolet rays) are pre-irradiated to a specific portion. Therefore, we worked on the development of a dicing / die bonding integrated film that has an adhesive layer in which the adhesive strength of the relevant part is lower than that of other parts and satisfies the following characteristics. That is, the region to which the dicing ring is attached has a high adhesive force that can withstand the flow of cutting water in the dicing process, while the region that has been pre-irradiated with a predetermined amount of active energy rays withstands an external force such as a dicing blade. On the other hand, the inventors have worked on the development of a dicing / die bonding integrated film having adhesive strength suitable for subsequent pickups.

The present disclosure is applicable to a step of dicing a wafer into a large number of small chips (area 9 mm ² or less), can sufficiently suppress DAF skipping in the dicing step, and has an adhesive layer having excellent pick-up property. An object of the present invention is to provide a dicing / die bonding integrated film and a method for producing the same. Another object of the present disclosure is to provide a method for manufacturing a semiconductor device using this dicing / die bonding integrated film.

One aspect of the present disclosure relates to a method for manufacturing a semiconductor device. This manufacturing method covers the central portion of the base material layer, the pressure-sensitive adhesive layer having the first surface facing the base material layer and the second surface opposite to the base material layer, and the second surface of the pressure-sensitive adhesive layer. A step of preparing a dicing / die bonding integrated film having an adhesive layer provided in the above, and a second surface of the adhesive layer while attaching a wafer to the adhesive layer of the dicing / die bonding integrated film. A step of attaching a dicing ring to the dicing ring, a step of singing the wafer into a plurality of chips having an area of 9 mm ² or less (dicing step), and a step of adhering the chips together with an adhesive piece obtained by singing the adhesive layer. The adhesive layer comprises a step of picking up from the layer and a step of mounting the chip on a substrate or another chip via an adhesive piece, and the adhesive layer corresponds to a region in the adhesive layer to which a wafer is attached. The first region has a second region to which the dicing ring is attached, and the first region is a region in which the adhesive strength is reduced as compared with the second region by irradiation with active energy rays. The adhesive strength of the first region to the adhesive layer, measured under the conditions of a peeling angle of 30 ° and a peeling speed of 60 mm / min at a temperature of 23 ° C., is 1.2 N / 25 mm or more and 4.5 N / 25 mm or less.

According to the above-mentioned method for manufacturing a semiconductor device, a semiconductor device can be manufactured with a sufficiently high yield because DAF skipping in the dicing process can be sufficiently suppressed and excellent pick-up property from the adhesive layer can be achieved.

One aspect of the present disclosure relates to a dicing / die bonding integrated film. This film is provided so as to cover a base material layer, an adhesive layer having a first surface facing the base material layer and a second surface opposite to the base material layer, and a central portion of the second surface. The pressure-sensitive adhesive layer includes an agent layer, and the pressure-sensitive adhesive layer has a first region including at least a region corresponding to a bonding position of a wafer in the adhesive layer, and a second region located so as to surround the first region. The first region is a region in which the adhesive strength is reduced as compared with the second region by irradiation with active energy rays, under the conditions of a peeling angle of 30 ° and a peeling speed of 60 mm / min at a temperature of 23 ° C. The measured adhesive strength of the first region to the adhesive layer is 1.2 N / 25 mm or more and 4.5 N / 25 mm or less.

By using the dicing / die bonding integrated film for manufacturing a semiconductor device, it is sufficiently high because DAF skipping in the dicing process can be sufficiently suppressed and excellent pick-up property from the adhesive layer can be achieved. Semiconductor devices can be manufactured with a yield.

From the viewpoint of suppressing ring peeling in the dicing step, the adhesive force of the second region of the pressure-sensitive adhesive layer on the stainless steel substrate is preferably 0.2 N / 25 mm or more. This adhesive strength means the peel strength measured under the conditions of a peeling angle of 90 ° and a peeling speed of 50 mm / min at a temperature of 23 ° C.

The first and second regions of the pressure-sensitive adhesive layer consist of, for example, the same composition before irradiation with active energy rays, and the first region is 10 to 1000 mJ / J / 1000 with respect to the region to be the first region. It was formed through a step of irradiating an amount of active energy rays of cm ² .

One aspect of the present disclosure relates to a method for producing the dicing / die bonding integrated film. The first aspect of this production method is formed on the surface of the base material layer, a pressure-sensitive adhesive layer made of a composition whose adhesive strength is reduced by irradiation with active energy rays, and on the surface of the pressure-sensitive adhesive layer. In this order, a step of producing a laminated body including the adhesive layer and a step of irradiating a region to be a first region of the pressure-sensitive adhesive layer contained in the laminated body with active energy rays are included. On the other hand, the second aspect of this production method is a step of forming a pressure-sensitive adhesive layer made of a composition whose adhesive strength is reduced by irradiation with active energy rays on the surface of the base material layer, and a pressure-sensitive adhesive layer. In this order, a step of irradiating the region to be the first region of the above with active energy rays and a step of laminating an adhesive layer on the surface of the pressure-sensitive adhesive layer after irradiating the active energy rays are included.

According to the present disclosure, it can be applied to a process of dicing a wafer into a large number of small chips, DAF skipping in the dicing process can be sufficiently suppressed, and dicing die bonding provided with an adhesive layer having excellent pick-up property. An integrated film is provided. Further, according to the present disclosure, a method for manufacturing a dicing / die bonding integrated film and a method for manufacturing a semiconductor device using the film are provided.

FIG. 1A is a plan view showing an embodiment of a dicing / diebonding integrated film, and FIG. 1B is a schematic cross-sectional view taken along the line BB shown in FIG. 1A. FIG. 2 is a schematic view showing a state in which a dicing ring is attached to the peripheral edge of the adhesive layer of the dicing / die bonding integrated film and a wafer is attached to the surface of the adhesive layer. FIG. 3 is a cross-sectional view schematically showing how the 30 ° peel strength of the adhesive layer with respect to the adhesive layer is measured. FIG. 4 is a schematic cross-sectional view of an embodiment of a semiconductor device. 5 (a) to 5 (d) are cross-sectional views schematically showing a process of manufacturing a DAF (a laminate of chips and adhesive pieces). FIG. 6 is a cross-sectional view schematically showing a process of manufacturing the semiconductor device shown in FIG. FIG. 7 is a cross-sectional view schematically showing a process of manufacturing the semiconductor device shown in FIG. FIG. 8 is a cross-sectional view schematically showing a process of manufacturing the semiconductor device shown in FIG.

Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. In the following description, the same or corresponding parts will be designated by the same reference numerals, and duplicate description will be omitted. The present invention is not limited to the following embodiments. As used herein, the term (meth) acrylic means acrylic or methacrylic.

<Dicing / die bonding integrated film>
FIG. 1A is a plan view showing a dicing / diebonding integrated film according to the present embodiment, and FIG. 1B is a schematic cross-sectional view taken along the line BB of FIG. The dicing / die bonding integrated film 10 (hereinafter, in some cases, simply referred to as “film 10”) is a semiconductor including a dicing step of individualizing a wafer W into a plurality of chips having an area of 9 mm ² or less and a subsequent pick-up step. It is applied to the manufacturing process of the device (see FIGS. 5 (c) and 5 (d)).

The film 10 has a base material layer 1, a pressure-sensitive adhesive layer 3 having a first surface F1 facing the base material layer 1 and a second surface F2 on the opposite side thereof, and a second surface F2 of the pressure-sensitive adhesive layer 3. An adhesive layer 5 provided so as to cover the central portion of the above is provided in this order. In the present embodiment, an embodiment in which one laminated body of the adhesive layer 3 and the adhesive layer 5 is formed on the square base material layer 1, but the base material layer 1 has a predetermined length ( For example, the laminated body of the adhesive layer 3 and the adhesive layer 5 may be arranged at predetermined intervals so as to have (100 m or more) and line up in the longitudinal direction thereof.

(Adhesive layer)
The pressure-sensitive adhesive layer 3 has a first region 3a including at least a region Rw corresponding to a bonding position of the wafer W in the adhesive layer 5, and a second region 3b located so as to surround the first region 3a. .. The broken lines in FIGS. 1 (a) and 1 (b) indicate the boundary between the first region 3a and the second region 3b. The first region 3a and the second region 3b consist of the same composition before irradiation with active energy rays. The first region 3a is a region in which the adhesive strength is reduced as compared with the second region 3b by being irradiated with active energy rays such as ultraviolet rays. The second region 3b is a region to which the dicing ring DR is attached (see FIG. 2). The second region 3b is a region not irradiated with active energy rays and has a high adhesive force to the dicing ring DR.

The adhesive force of the first region 3a with respect to the adhesive layer 5 is 1.2 N / 25 mm or more and 4.5 N / 25 mm or less. This adhesive strength is a 30 ° peel strength measured under the conditions of a peeling angle of 30 ° and a peeling speed of 60 mm / min at a temperature of 23 ° C. FIG. 3 is a cross-sectional view schematically showing how the 30 ° peel strength of the adhesive layer 3 is measured with the adhesive layer 5 of the measurement sample (width 25 mm × length 100 mm) fixed to the support plate 80. Is. By setting the adhesive force (30 ° peel strength) of the first region 3a to the adhesive layer 5 within the above range, it is possible to sufficiently achieve both suppression of DAF skipping during dicing and excellent pick-up property. .. This makes it possible to manufacture a semiconductor device with a sufficiently high yield. The lower limit of the adhesive strength may be 1.5 N / 25 mm or 2.0 N / 25 mm, and the upper limit may be 3.5 N / 25 mm or 2.5 N / 25 mm.

As described above, the film 10 is suitable for a dicing step of individualizing a wafer into a plurality of small chips having an area of 9 mm ² or less and a subsequent pick-up step. The present inventors have focused on the difference between the pickup behavior of a small chip having a size of 3 mm × 3 mm or less (area 9 mm ² or less) and the pickup behavior of a large chip having a size of, for example, about 8 mm × 6 mm. As a result, the adhesive force of the first region 3a with respect to the adhesive layer 5 was specified in the above range (1.2 N / 25 mm or more and 4.5 N / 25 mm or less). That is, when the large chip is picked up by pushing up the center of the large chip from below with the pin of the push-up jig, if the 30 ° peel strength of the first region 3a with respect to the adhesive layer 5 is within the above range, the pin Although the interfacial peeling between the adhesive layer and the adhesive piece progresses from the edge portion to the central portion of the DAF as the pressure increases, the adhesive strength of the adhesive layer is too strong, so that the interfacial peeling causes the pin to rise. It cannot catch up, and the chip is excessively deformed, which tends to cause cracking or pickup mistakes. That is, the pick-up property of the large chip is mainly dominated by the interfacial peeling between the adhesive layer and the adhesive piece, and the adhesive force of the adhesive layer with respect to the adhesive layer is smaller than the lower limit value (1.2 N / 25 mm) in the above range. The present inventors have found that it should be set. On the other hand, the pick-up property of the small tip is mainly dominated by the peeling of the edge portion of the DAF, and once the edge portion is peeled off by pushing up with a pin, the interface peeling between the adhesive layer and the adhesive piece is smooth thereafter. The present inventors have found that progress is made in. Therefore, even if the adhesive force of the first region 3a to the adhesive layer 5 is relatively strong, excellent pick-up property can be achieved in the case of a small chip. Further, since the adhesive force of the first region 3a to the adhesive layer 5 is relatively strong, DAF skipping in the dicing step can be sufficiently suppressed.

The first region 3a having an adhesive force in the above range with respect to the adhesive layer 5 is formed by irradiation with active energy rays. The present inventors have found that reducing the adhesive force of the pressure-sensitive adhesive layer by irradiation with active energy rays affects the peeling of the edge portion of the DAF. That is, if the adhesive strength of the first region 3a is excessively reduced by irradiation with active energy rays, the 30 ° peel strength of the first region 3a with respect to the adhesive layer 5 becomes low, but the pick-up target is small. In the case of a chip, the edge portion of the DAF tends to be difficult to peel off, and the chip is likely to be excessively deformed to cause cracking or pick-up error. The adhesive force of the first region 3a (1.2 N / 25 mm or more and 4.5 N / 25 mm or less) with respect to the adhesive layer 5 does not excessively reduce the adhesive force before irradiation with the active energy ray. It can be said that this makes it easy for the edge portion of the DAF to peel off even with a small chip. In the present embodiment, for example, by relatively reducing the amount of the cross-linking agent in the pressure-sensitive adhesive layer or reducing the irradiation amount of the active energy rays, the adhesive strength of the first region 3a of the pressure-sensitive adhesive layer 3 is reduced. Can be adjusted.

The adhesive strength of the second region 3b to the stainless steel substrate is preferably 0.2 N / 25 mm or more. This adhesive strength is a 90 ° peel strength measured under the conditions of a peeling angle of 90 ° and a peeling speed of 50 mm / min at a temperature of 23 ° C. When this adhesive force is 0.2 N / 25 mm or more, it is possible to sufficiently suppress ring peeling during dicing. The lower limit of the adhesive strength may be 0.3 N / 25 mm or 0.4 N / 25 mm, and the upper limit may be, for example, 2.0 N / 25 mm and 1.0 N / 25 mm.

The pressure-sensitive adhesive layer before irradiation with active energy rays comprises, for example, a pressure-sensitive adhesive composition containing a (meth) acrylic resin, a photopolymerization initiator, and a cross-linking agent. The second region 3b, which is not irradiated with the active energy ray, has the same composition as the pressure-sensitive adhesive layer before the irradiation with the active energy ray. Hereinafter, the components contained in the pressure-sensitive adhesive composition will be described in detail.

[(Meta) acrylic resin]
The pressure-sensitive adhesive composition preferably contains a (meth) acrylic resin having a chain-polymerizable functional group, and the functional group is preferably at least one selected from an acryloyl group and a methacryloyl group. The content of the functional group in the pressure-sensitive adhesive layer before irradiation with active energy rays is, for example, 0.1 to 1.2 mmol / g, and 0.3 to 1.0 mmol / g or 0.5 to 0.8 mmol / g. It may be g. When the content of the functional group is 0.1 mmol / g or more, it is easy to form a region (first region 3a) in which the adhesive strength is appropriately reduced by irradiation with active energy rays, while 1.2 mmol / g / g. When it is g or less, it is easy to achieve excellent pick-up property.

The (meth) acrylic resin can be obtained by synthesizing it by a known method. Examples of the synthesis method include a solution polymerization method, a suspension polymerization method, an emulsion polymerization method, a massive polymerization method, a precipitation polymerization method, a vapor phase polymerization method, a plasma polymerization method, and a supercritical polymerization method. The types of polymerization reactions include radical polymerization, cationic polymerization, anionic polymerization, living radical polymerization, living cationic polymerization, living anionic polymerization, coordination polymerization, immodal polymerization, etc., as well as ATRP (atomic transfer radical polymerization) and RAFT (Atomic transfer radical polymerization). Techniques such as reversible addition cleavage chain transfer polymerization) can also be mentioned. Among these, the synthesis by radical polymerization using the solution polymerization method has good economic efficiency, high reaction rate, easy polymerization control, etc., and can be blended by using the resin solution obtained by polymerization as it is. It has advantages such as.

Here, a method for synthesizing a (meth) acrylic resin will be described in detail by taking as an example a method of obtaining a (meth) acrylic resin by radical polymerization using a solution polymerization method.

The monomer used in synthesizing the (meth) acrylic resin is not particularly limited as long as it has one (meth) acryloyl group in one molecule. Specific examples thereof include methyl (meth) acrylate, ethyl (meth) acrylate, butyl (meth) acrylate, isobutyl (meth) acrylate, tert-butyl (meth) acrylate, butoxyethyl (meth) acrylate, and isoamyl (meth) acrylate. , Hexyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, heptyl (meth) acrylate, octyl heptyl (meth) acrylate, nonyl (meth) acrylate, decyl (meth) acrylate, undecyl (meth) acrylate, lauryl (meth) Acrylate, tridecyl (meth) acrylate, tetradecyl (meth) acrylate, pentadecyl (meth) acrylate, hexadecyl (meth) acrylate, stearyl (meth) acrylate, behenyl (meth) acrylate, methoxypolyethylene glycol (meth) acrylate, ethoxypolyethylene glycol ( Acrylate (meth) acrylates such as meta) acrylate, methoxypolypropylene glycol (meth) acrylate, ethoxypolypropylene glycol (meth) acrylate, mono (2- (meth) acryloyloxyethyl) succinate; cyclopentyl (meth) acrylate, cyclohexyl (meth) Meta) acrylate, cyclopentyl (meth) acrylate, dicyclopentanyl (meth) acrylate, dicyclopentenyl (meth) acrylate, isobornyl (meth) acrylate, mono (2- (meth) acryloyloxyethyl) tetrahydrophthalate, mono ( Alicyclic (meth) acrylates such as 2- (meth) acryloyloxyethyl) hexahydrophthalate; benzyl (meth) acrylate, phenyl (meth) acrylate, o-biphenyl (meth) acrylate, 1-naphthyl (meth) acrylate , 2-naphthyl (meth) acrylate, phenoxyethyl (meth) acrylate, p-cumylphenoxyethyl (meth) acrylate, o-phenylphenoxyethyl (meth) acrylate, 1-naphthoxyethyl (meth) acrylate, 2-naphthoxyethyl (meth) acrylate ) Acrylate, phenoxypolyethylene glycol (meth) acrylate, nonylphenoxypolyethylene glycol (meth) acrylate, phenoxypolypropylene glycol (meth) acrylate, 2-hydroxy-3-phenoxypropyl (meth) acrylate, 2-hydro Xi-3- (o-phenylphenoxy) propyl (meth) acrylate, 2-hydroxy-3- (1-naphthoxy) propyl (meth) acrylate, 2-hydroxy-3- (2-naphthoxy) propyl (meth) acrylate, etc. Aromatic (meth) acrylate; 2-tetrahydrofurfuryl (meth) acrylate, N- (meth) acryloyloxyethyl hexahydrophthalimide, 2- (meth) acryloyloxyethyl-N-carbazole, etc. Meta) acrylate, these caprolactone modified products, ω-carboxy-polycaprolactone mono (meth) acrylate, glycidyl (meth) acrylate, α-ethylglycidyl (meth) acrylate, α-propyl glycidyl (meth) acrylate, α-butyl glycidyl (Meta) acrylate, 2-methylglycidyl (meth) acrylate, 2-ethylglycidyl (meth) acrylate, 2-propylglycidyl (meth) acrylate, 3,4-epoxybutyl (meth) acrylate, 3,4-epoxyheptyl ( Meta) acrylate, α-ethyl-6,7-epoxyheptyl (meth) acrylate, 3,4-epoxycyclohexylmethyl (meth) acrylate, o-vinylbenzyl glycidyl ether, m-vinylbenzyl glycidyl ether, p-vinylbenzyl glycidyl Compounds having an ethylenically unsaturated group such as ether and an epoxy group; (2-ethyl-2-oxetanyl) methyl (meth) acrylate, (2-methyl-2-oxetanyl) methyl (meth) acrylate, 2- (2- (2-) Ethyl-2-oxetanyl) ethyl (meth) acrylate, 2- (2-methyl-2-oxetanyl) ethyl (meth) acrylate, 3- (2-ethyl-2-oxetanyl) propyl (meth) acrylate, 3- (2) -A compound having an ethylenically unsaturated group such as methyl-2-oxetanyl) propyl (meth) acrylate and an oxetanyl group; a compound having an ethylenically unsaturated group and an isocyanate group such as 2- (meth) acryloyloxyethyl isocyanate; Ethylenes such as −hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 3-chloro-2-hydroxypropyl (meth) acrylate, 2-hydroxybutyl (meth) acrylate Examples include compounds having a sex unsaturated group and a hydroxyl group. The desired (meth) acrylic resin can be obtained by appropriately combining them.

The (meth) acrylic resin preferably has at least one functional group selected from a hydroxyl group, a glycidyl group, an amino group and the like as a reaction point with a functional group-introducing compound or a cross-linking agent described later. Examples of the monomer for synthesizing the (meth) acrylic resin having a hydroxyl group include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, and 3-chloro-2. Examples thereof include compounds having an ethylenically unsaturated group and a hydroxyl group such as −hydroxypropyl (meth) acrylate and 2-hydroxybutyl (meth) acrylate, and these may be used alone or in combination of two or more. Can be done.

Examples of the monomer for synthesizing a (meth) acrylic resin having a glycidyl group include glycidyl (meth) acrylate, α-ethylglycidyl (meth) acrylate, α-propyl glycidyl (meth) acrylate, and α-butyl glycidyl (meth). Acrylate, 2-methylglycidyl (meth) acrylate, 2-ethylglycidyl (meth) acrylate, 2-propylglycidyl (meth) acrylate, 3,4-epoxybutyl (meth) acrylate, 3,4-epoxyheptyl (meth) acrylate , Α-Ethyl-6,7-epoxyheptyl (meth) acrylate, 3,4-epoxycyclohexylmethyl (meth) acrylate, o-vinylbenzyl glycidyl ether, m-vinylbenzyl glycidyl ether, p-vinylbenzyl glycidyl ether, etc. Examples thereof include compounds having an ethylenically unsaturated group and an epoxy group, and these can be used alone or in combination of two or more.

The (meth) acrylic resin synthesized from these monomers preferably contains a functional group capable of chain polymerization. The chain-growthable functional group is, for example, at least one selected from an acryloyl group and a methacryloyl group. The chain-growth-capable functional group is introduced into the (meth) acrylic resin, for example, by reacting the (meth) acrylic resin synthesized as described above with the following compound (functional group-introduced compound). be able to. Specific examples of the functional group-introduced compound include 2-methacryloyloxyethyl isocyanate, meta-isopropenyl-α, α-dimethylbenzyl isocyanate, methacryloylisocyanate, allylisocyanate, 1,1- (bisacryloyloxymethyl) ethyl isocyanate; diisocyanate compound. Alternatively, an acryloyl monoisocyanate compound obtained by reacting a polyisocyanate compound with hydroxyethyl (meth) acrylate or 4-hydroxybutylethyl (meth) acrylate; a diisocyanate compound or polyisocyanate compound, a polyol compound, and hydroxyethyl (meth). Examples thereof include an acryloyl monoisocyanate compound obtained by reacting with acrylate. Of these, 2-methacryloyloxyethyl isocyanate is particularly preferable. One of these compounds may be used alone, or two or more of these compounds may be used in combination.

[Photopolymerization initiator]
The photopolymerization initiator is not particularly limited as long as it generates an active species capable of chain polymerization by irradiating it with active energy rays (at least one selected from ultraviolet rays, electron beams and visible light), for example. , Photo-radical polymerization initiator. Here, the chain-growth-capable active species means one in which the polymerization reaction is started by reacting with a chain-polymerizable functional group.

Examples of the photoradical polymerization initiator include benzoyl ketals such as 2,2-dimethoxy-1,2-diphenylethane-1-one; 1-hydroxycyclohexylphenylketone and 2-hydroxy-2-methyl-1-phenylpropane-1. -On, α-hydroxyketones such as 1- [4- (2-hydroxyethoxy) phenyl] -2-hydroxy-2-methyl-1-propane-1-one; 2-benzyl-2-dimethylamino-1-one Α-Aminoketones such as (4-morpholinophenyl) -butane-1-one, 1,2-methyl-1- [4- (methylthio) phenyl] -2-morpholinopropane-1-one; 1- [4 -(Phenylthio) phenyl] -1,2-octadion-2- (benzoyl) oxime and other oxime esters; bis (2,4,6-trimethylbenzoyl) phenylphosphine oxide, bis (2,6-dimethoxybenzoyl) -2 , 4,4-trimethylpentylphosphine oxide, phosphine oxides such as 2,4,6-trimethylbenzoyldiphenylphosphine oxide; 2- (o-chlorophenyl) -4,5-diphenylimidazole dimer, 2- (o-chlorophenyl) ) -4,5-di (methoxyphenyl) imidazole dimer, 2- (o-fluorophenyl) -4,5-diphenylimidazole dimer, 2- (o-methoxyphenyl) 4,5-diphenylimidazole 2,4,5-Triarylimidazole dimer such as dimer, 2- (p-methoxyphenyl) -4,5-diphenylimidazole dimer; benzophenone, N, N'-tetramethyl-4,4 Benzoyl compounds such as'-diaminobenzophenone, N, N'-tetraethyl-4,4'-diaminobenzophenone, 4-methoxy-4'-dimethylaminobenzophenone; 2-ethylanthraquinone, phenanthrenquinone, 2-tert-butylanthraquinone, Octamethyl anthraquinone, 1,2-benz anthraquinone, 2,3-benz anthraquinone, 2-phenyl anthraquinone, 2,3-diphenyl anthraquinone, 1-chloroanthraquinone, 2-methyl anthraquinone, 1,4-naphthoquinone, 9,10- Kinone compounds such as phenanthraquinone, 2-methyl-1,4-naphthoquinone and 2,3-dimethylanthraquinone; benzoin ethers such as benzoin methyl ether, benzoin ethyl ether and benzoin phenyl ether; Benzoin compounds such as benzoin, methylbenzoin and ethylbenzoin; benzyl compounds such as benzyldimethylketal; aclysin compounds such as 9-phenylaclydin and 1,7-bis (9,9'-acridinylheptane): N-phenylglycine , Benzyl.

The content of the photopolymerization initiator in the pressure-sensitive adhesive composition is, for example, 0.1 to 30 parts by mass and 0.3 to 10 parts by mass with respect to 100 parts by mass of the content of the (meth) acrylic resin. It is preferably 0.5 to 5 parts by mass, and more preferably 0.5 to 5 parts by mass. If the content of the photopolymerization initiator is less than 0.1 parts by mass, the pressure-sensitive adhesive layer is insufficiently cured after irradiation with active energy rays, and pickup failure is likely to occur. If the content of the photopolymerization initiator exceeds 30 parts by mass, contamination of the adhesive layer (transfer of the photopolymerization initiator to the adhesive layer) is likely to occur.

[Crosslinking agent]
The cross-linking agent is used, for example, for the purpose of controlling the elastic modulus and / or the adhesiveness of the pressure-sensitive adhesive layer. The cross-linking agent may be a compound having two or more functional groups in one molecule capable of reacting with at least one functional group selected from the hydroxyl group, glycidyl group, amino group and the like possessed by the (meth) acrylic resin. .. Examples of the bond formed by the reaction between the cross-linking agent and the (meth) acrylic resin include an ester bond, an ether bond, an amide bond, an imide bond, a urethane bond, and a urea bond.

In the present embodiment, it is preferable to use a compound having two or more isocyanate groups in one molecule as the cross-linking agent. When such a compound is used, it can easily react with the hydroxyl group, glycidyl group, amino group and the like contained in the (meth) acrylic resin to form a strong crosslinked structure.

Compounds having two or more isocyanate groups in one molecule include 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diisocyanate, 1,4-xylene diisocyanate, and diphenylmethane-4. , 4'-diisocyanate, diphenylmethane-2,4'-diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane-4,4'-diisocyanate, dicyclohexylmethane-2,4'-diisocyanate, lysine isocyanate Isocyanate compounds such as.

As the cross-linking agent, the above-mentioned isocyanate compound and a reaction product of a polyhydric alcohol having two or more OH groups in one molecule (isocyanate group-containing oligomer) may be adopted. Examples of polyhydric alcohols having two or more OH groups in one molecule include ethylene glycol, propylene glycol, butylene glycol, 1,6-hexanediol, 1,8-octanediol, 1,9-nonanediol. Examples thereof include 1,10-decanediol, 1,11-undecanediol, 1,12-dodecanediol, glycerin, pentaerythritol, dipentaerythritol, 1,4-cyclohexanediol and 1,3-cyclohexanediol.

Among these, as a cross-linking agent, a reaction product of a polyfunctional isocyanate having two or more isocyanate groups in one molecule and a polyhydric alcohol having three or more OH groups in one molecule (isocyanate group-containing oligomer). Is even more desirable. By using such an isocyanate group-containing oligomer as a cross-linking agent, the pressure-sensitive adhesive layer 3 forms a dense cross-linked structure, which can sufficiently suppress the pressure-sensitive adhesive from adhering to the adhesive layer 5 in the pick-up step. ..

The content of the cross-linking agent in the pressure-sensitive adhesive composition may be appropriately set according to the cohesive force and the elongation at break required for the pressure-sensitive adhesive layer, the adhesion to the pressure-sensitive adhesive layer 5, and the like. Specifically, the content of the cross-linking agent is, for example, 3 to 30 parts by mass, preferably 4 to 15 parts by mass, and 7 to 7 to 3 parts by mass with respect to 100 parts by mass of the content of the (meth) acrylic resin. More preferably, it is 10 parts by mass. By setting the content of the cross-linking agent in the above range, it is possible to achieve both the characteristics required for the pressure-sensitive adhesive layer in the dicing step and the characteristics required for the pressure-sensitive adhesive layer 3 in the die bonding step in a well-balanced manner. Excellent pickup performance can also be achieved.

If the content of the cross-linking agent is less than 3 parts by mass with respect to 100 parts by mass of the content of the (meth) acrylic resin, the formation of the cross-linked structure tends to be insufficient, and due to this, adhesion is performed in the pickup process. The interfacial adhesion with the agent layer 5 is not sufficiently reduced, and defects are likely to occur during pickup. On the other hand, when the content of the cross-linking agent exceeds 30 parts by mass with respect to the content of 100 parts by mass of the (meth) acrylic resin, the pressure-sensitive adhesive layer 3 tends to become excessively hard, and due to this, in the expanding step. The semiconductor chip is easily peeled off.

The content of the cross-linking agent with respect to the total mass of the pressure-sensitive adhesive composition is, for example, 0.1 to 20% by mass, and may be 3 to 17% by mass or 5 to 15% by mass. When the content of the cross-linking agent is 0.1% by mass or more, it is easy to form a region (first region 3a) in which the adhesive strength is appropriately reduced by irradiation with active energy rays, while the content is 15% by mass or less. By being there, it is easy to achieve excellent pick-up performance.

The thickness of the pressure-sensitive adhesive layer 3 may be appropriately set according to the conditions of the expanding step (temperature, tension, etc.), and is, for example, 1 to 200 μm, preferably 5 to 50 μm, and preferably 10 to 20 μm. Is more preferable. If the thickness of the pressure-sensitive adhesive layer 3 is less than 1 μm, the adhesiveness tends to be insufficient, and if it exceeds 200 μm, the calf width becomes narrow during expansion (stress is relaxed when the pin is pushed up), and pickup tends to be insufficient. ..

The pressure-sensitive adhesive layer 3 is formed on the base material layer 1. As a method for forming the pressure-sensitive adhesive layer 3, a known method can be adopted. For example, a laminate of the base material layer 1 and the pressure-sensitive adhesive layer 3 may be formed by a two-layer extrusion method, or a varnish for forming the pressure-sensitive adhesive layer 3 may be prepared and applied to the surface of the base material layer 1. The pressure-sensitive adhesive layer 3 may be formed on the film which has been processed or released and transferred to the base material layer 1.

The varnish for forming the pressure-sensitive adhesive layer 3 is preferably prepared by using an organic solvent capable of dissolving the (meth) acrylic resin, the photopolymerization initiator and the cross-linking agent, which volatilizes by heating. Specific examples of the organic solvent include aromatic hydrocarbons such as toluene, xylene, mesityrene, cumene and p-simene; cyclic ethers such as tetrahydrofuran and 1,4-dioxane; methanol, ethanol, isopropanol, butanol, ethylene glycol and propylene. Alcohols such as glycol; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, 4-hydroxy-4-methyl-2-pentanone; methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, γ-butyrolactone, etc. Estel: Carbonated esters such as ethylene carbonate and propylene carbonate; ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol Polyhydric alcohol alkyl ethers such as dimethyl ether, propylene glycol diethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether; ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, ethylene glycol mono Polyhydric alcohol alkyl ether acetates such as butyl ether acetate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, diethylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether acetate; N, N-dimethylformamide, N, N-dimethylacetamide, N -Includes amides such as methylpyrrolidone.

Among these, from the viewpoint of solubility and boiling point, for example, toluene, methanol, ethanol, isopropanol, acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, methyl acetate, ethyl acetate, butyl acetate, ethylene glycol monomethyl ether, ethylene glycol mono Ethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, diethylene glycol dimethyl ether, ethylene glycol monomethyl ether acetate, propylene glycol monomethyl ether acetate, and N, N-dimethylacetamide are preferable. One of these organic solvents may be used alone, or two or more of them may be used in combination. The solid content concentration of the varnish is usually preferably 10 to 60% by mass.

(Base layer)
As the base material layer 1, a known polymer sheet or film can be used, and there is no particular limitation as long as the expanding step can be carried out under low temperature conditions. Specifically, as the base material layer 1, crystalline polypropylene, amorphous polypropylene, high-density polyethylene, medium-density polyethylene, low-density polyethylene, ultra-low-density polyethylene, low-density linear polyethylene, polybutene, polymethylpentene, etc. Polypropylene, ethylene-vinyl acetate copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene-butene copolymer, ethylene- Hexene copolymer, polyurethane, polyethylene terephthalate, polyethylene naphthalate and other polyesters, polycarbonate, polyimide, polyether ether ketone, polyimide, polyetherimide, polyamide, total aromatic polyamide, polyphenylsulfide, aramid (paper), glass , Glass cloth, fluororesin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, silicone resin, a mixture of these mixed with a plasticizer, or a cured product crosslinked by electron beam irradiation.

The base material layer 1 has a surface containing at least one resin selected from polyethylene, polypropylene, a polyethylene-polypropylene random copolymer, and a polyethylene-polypropylene block copolymer as a main component, and this surface and the pressure-sensitive adhesive layer 3 Are preferably in contact with each other. These resins are good base materials from the viewpoints of properties such as Young's modulus, stress relaxation property and melting point, as well as price and waste material recycling after use. The base material layer 1 may be a single layer, but may have a multilayer structure in which layers made of different materials are laminated, if necessary. In order to control the adhesion to the pressure-sensitive adhesive layer 3, the surface of the base material layer 1 may be subjected to a surface roughness treatment such as a matte treatment or a corona treatment.

(Adhesive layer)
An adhesive composition constituting a known die bonding film can be applied to the adhesive layer 5. Specifically, the adhesive composition constituting the adhesive layer 5 preferably contains an epoxy group-containing acrylic copolymer, an epoxy resin, and an epoxy resin curing agent. According to the adhesive layer 5 containing these components, the adhesiveness between chips / substrates and between chips / chips is excellent, electrode embedding property and wire embedding property can be imparted, and adhesion is performed at a low temperature in the die bonding step. It is preferable because it can be formed, excellent curing can be obtained in a short time, and it has excellent reliability after molding with a sealing agent.

Examples of the epoxy resin include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, alicyclic epoxy resin, aliphatic chain epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, and the like. Bisphenol A novolac type epoxy resin, diglycidyl etherified product of biphenol, diglycidyl etherified product of naphthalenediol, diglycidyl etherified product of phenols, diglycidyl etherified product of alcohols, and alkyl substituents and halides thereof. , Bifunctional epoxy resin such as hydrogen additive, novolac type epoxy resin and the like. Further, other commonly known epoxy resins such as a polyfunctional epoxy resin and a heterocycle-containing epoxy resin may be applied. These can be used alone or in combination of two or more. In addition, a component other than the epoxy resin may be contained as an impurity as long as the characteristics are not impaired.

Examples of the epoxy resin curing agent include those such as a phenol resin obtained by reacting a phenol compound with a xylylene compound which is a divalent linking group in the presence of a catalyst or an acid catalyst. Examples of the phenolic compound used for producing the phenolic resin include phenol, o-cresol, m-cresol, p-cresol, o-ethylphenol, p-ethylphenol, on-propylphenol, mn-propylphenol, and the like. pn-propylphenol, o-isopropylphenol, m-isopropylphenol, p-isopropylphenol, on-butylphenol, mn-butylphenol, pn-butylphenol, o-isobutylphenol, m-isobutylphenol, p-isobutylphenol, octylphenol, nonylphenol, 2,4-xylenol, 2,6-xylenol, 3,5-xylenol, 2,4,6-trimethylphenol, resorcin, catechol, hydroquinone, 4-methoxyphenol, o-phenyl Phenol, m-phenylphenol, p-phenylphenol, p-cyclohexylphenol, o-allylphenol, p-allylphenol, o-benzylphenol, p-benzylphenol, o-chlorophenol, p-chlorophenol, o-bromo Examples thereof include phenol, p-bromophenol, o-iodophenol, p-iodophenol, o-fluorophenol, m-fluorophenol, p-fluorophenol and the like. These phenol compounds may be used alone or in combination of two or more. As the xylylene compound which is a divalent linking group used for producing a phenol resin, the following xylylene halides, xylylene diglycols and derivatives thereof can be used. That is, α, α'-dichloro-p-xylene, α, α'-dichloro-m-xylene, α, α'-dichloro-o-xylene, α, α'-dibromo-p-xylene, α, α' -Dibromo-m-xylene, α, α'-dibromo-o-xylene, α, α'-diiodo-p-xylene, α, α'-diiodo-m-xylene, α, α'-diiodo-o-xylene , Α, α'-dihydroxy-p-xylene, α, α'-dihydroxy-m-xylene, α, α'-dihydroxy-o-xylene, α, α'-dimethoxy-p-xylene, α, α'- Dimethoxy-m-xylene, α, α'-dimethoxy-o-xylene, α, α'-diethoxy-p-xylene, α, α'-diethoxy-m-xylene, α, α'-diethoxy-o-xylene, α, α'-di-n-propoxy-p-xylene, α, α'-di-n-propoxy-m-xylene, α, α'-di-n-propoxy-o-xylene, α, α'- Di-isopropoxy-p-xylene, α, α'-diisopropoxy-m-xylene, α, α'-diisopropoxy-o-xylene, α, α'-di-n-butoxy-p-xylene, α, α'-di-n-butoxy-m-xylene, α, α'-di-n-butoxy-o-xylene, α, α'-diisobutoxy-p-xylene, α, α'-diisobutoxy-m- Xylene, α, α'-diisobutoxy-o-xylene, α, α'-di-tert-butoxy-p-xylene, α, α'-di-tert-butoxy-m-xylene, α, α'-di- tert-butoxy-o-xylene can be mentioned. These can be used alone or in combination of two or more.

When the above-mentioned phenol compound and xylylene compound are reacted, mineral acids such as hydrochloric acid, sulfuric acid, phosphoric acid and polyphosphoric acid; organic substances such as dimethylsulfate, diethylsulfate, p-toluenesulfonic acid, methanesulfonic acid and ethanesulfonic acid. Carboxy acids; Super strong acids such as trifluoromethanesulfonic acid; Strongly acidic ion exchange resins such as alcan sulfonic acid type ion exchange resin; Super strong acidic ion exchange such as perfluoroalkane sulfonic acid type ion exchange resin Resins (trade names: Nafion, Nafion, manufactured by Du Pont, "Nafion" is a registered trademark); natural and synthetic zeolites; using acidic catalysts such as active white clay (acidic white clay), substantially at 50 to 250 ° C. It is obtained by reacting until the xylylene compound as a raw material disappears and the reaction composition becomes constant. The reaction time depends on the raw material and the reaction temperature, but is about 1 hour to 15 hours, and may be actually determined by tracking the reaction composition by GPC (gel permeation chromatography) or the like.

The epoxy group-containing acrylic copolymer is preferably a copolymer obtained by using glycidyl acrylate or glycidyl methacrylate as a raw material in an amount of 0.5 to 6% by mass with respect to the obtained copolymer. When this amount is 0.5% by mass or more, high adhesive strength can be easily obtained, while when it is 6% by mass or less, gelation can be suppressed. For the balance, a mixture of alkyl acrylates having an alkyl group having 1 to 8 carbon atoms such as methyl acrylate and methyl methacrylate, alkyl methacrylate, and styrene and acrylonitrile can be used. Of these, ethyl (meth) acrylate and / or butyl (meth) acrylate are particularly preferable. The mixing ratio is preferably adjusted in consideration of the Tg of the copolymer. If the Tg is less than −10 ° C., the tackiness of the adhesive layer 5 in the B stage state tends to increase, and the handleability tends to deteriorate. The upper limit of the glass transition point (Tg) of the epoxy group-containing acrylic copolymer is, for example, 30 ° C. The polymerization method is not particularly limited, and examples thereof include pearl polymerization and solution polymerization. Examples of commercially available epoxy group-containing acrylic copolymers include HTR-860P-3 (trade name, manufactured by Nagase ChemteX Corporation).

The weight average molecular weight of the epoxy group-containing acrylic copolymer is 100,000 or more, and in this range, the adhesiveness and heat resistance are high, preferably 300,000 to 3 million, and preferably 500,000 to 2 million. Is more preferable. When the weight average molecular weight is 3 million or less, it is possible to suppress a decrease in the filling property between the semiconductor chip and the substrate supporting the semiconductor chip. The weight average molecular weight is a polystyrene-equivalent value using a calibration curve of standard polystyrene by gel permeation chromatography (GPC).

The adhesive layer 5 may further contain a curing accelerator such as a tertiary amine, imidazoles, or a quaternary ammonium salt, if necessary. Specific examples of the curing accelerator include 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and 1-cyanoethyl-2-phenylimidazolium trimerite. One of these may be used alone, or two or more thereof may be used in combination.

The adhesive layer 5 may further contain an inorganic filler, if necessary. Specific examples of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, and boron nitride. Examples include crystalline silica and amorphous silica. One of these may be used alone, or two or more thereof may be used in combination.

The thickness of the adhesive layer 5 is, for example, 1 to 300 μm, preferably 5 to 150 μm, and more preferably 10 to 100 μm. If the thickness of the adhesive layer 5 is less than 1 μm, the adhesiveness tends to be insufficient, while if it exceeds 300 μm, the splitting property and pick-up property at the time of expanding tend to be insufficient.

The adhesive layer 5 may not contain a thermosetting resin. For example, when the adhesive layer 5 contains a reactive group-containing (meth) acrylic copolymer, the adhesive layer 5 contains a reactive group-containing (meth) acrylic copolymer, a curing accelerator, and a filler. Anything may be used (see Example 4).

<Manufacturing method of dicing / die bonding integrated film>
The method for producing the film 10 is to form on the surface of the base material layer 1 a pressure-sensitive adhesive layer composed of a pressure-sensitive adhesive composition whose adhesive strength is reduced by irradiation with active energy rays, and on the surface of the pressure-sensitive adhesive layer. A step of producing a laminated body including the adhesive layer 5 and a step of irradiating a region to be a first region 3a of the pressure-sensitive adhesive layer contained in the laminated body with active energy rays are included in this order. The irradiation amount of the active energy ray to the region to be the first region 3a is, for example, 10 to 1000 mJ / cm ² , and may be 100 to 700 mJ / cm ² or 200 to 500 mJ / cm ² .

In the above manufacturing method, a laminate of the pressure-sensitive adhesive layer and the adhesive layer 5 is first produced, and then a specific region of the pressure-sensitive adhesive layer is irradiated with active energy rays. As described below, the pressure-sensitive adhesive layer before being bonded to the adhesive layer 5 may be irradiated with active energy rays to form the first region 3a. That is, the method for producing the film 10 includes a step of forming a pressure-sensitive adhesive layer made of a composition whose adhesive strength is reduced by irradiation with active energy rays on the surface of the base material layer 1, and a step of forming the pressure-sensitive adhesive layer. The step of irradiating the region to be the region 3a of 1 with the active energy ray and the step of laminating the adhesive layer 5 on the surface of the adhesive layer 3 after irradiating the active energy ray are included in this order. You can.

<Semiconductor device and its manufacturing method>
FIG. 4 is a cross-sectional view schematically showing the semiconductor device according to the present embodiment. The semiconductor device 100 shown in this figure includes a substrate 70, four chips S1, S2, S3, S4 laminated on the surface of the substrate 70, electrodes (not shown) on the surface of the substrate 70, and four chips S1. , S2, S3, S4 are electrically connected with wires W1, W2, W3, W4, and a sealing layer 50 for sealing these.

The substrate 70 is, for example, an organic substrate and may be a metal substrate such as a lead frame. From the viewpoint of suppressing the warp of the semiconductor device 100, the thickness of the substrate 70 is, for example, 70 to 140 μm, and may be 80 to 100 μm.

The four chips S1, S2, S3, and S4 are laminated via a cured product 5C of the adhesive piece 5P. The shapes of the chips S1, S2, S3, and S4 in a plan view are, for example, a square or a rectangle. The area of the chips S1, S2, S3, S4 is 9 mm ² or less, and may be 0.1 to 4 mm ² or 0.1 to ² mm ² . The length of one side of the chips S1, S2, S3, and S4 is, for example, 3 mm or less, and may be 0.1 to 2.0 mm or 0.1 to 1.0 mm. The thickness of the chips S1, S2, S3, S4 is, for example, 10 to 170 μm, and may be 25 to 100 μm. The length of one side of the four chips S1, S2, S3, and S4 may be the same or different from each other, and the thickness is also the same.

The method for manufacturing the semiconductor device 100 includes the step of preparing the film 10 described above, attaching the wafer W to the adhesive layer 5 of the film 10, and dicing ring DR on the second surface F2 of the adhesive layer 3. A step of attaching the wafer W, a step of separating the wafer W into a plurality of chips S having an area of 9 mm ² or less (dicing step), and a DAF8 (a laminate of the chips S1 and the adhesive piece 5P, see FIG. 5D). The step of picking up from the first region 3a of the pressure-sensitive adhesive layer 3 and the step of mounting the chip S1 on the substrate 70 via the adhesive piece 5P are included.

An example of a method for producing DAF8 will be described with reference to FIGS. 5 (a) to 5 (d). First, the above-mentioned film 10 is prepared. As shown in FIGS. 5A and 5B, the film 10 is attached so that the adhesive layer 5 is in contact with one surface of the wafer W. Further, the dicing ring DR is attached to the second surface F2 of the pressure-sensitive adhesive layer 3.

The wafer W, the adhesive layer 5 and the adhesive layer 3 are diced. As a result, as shown in FIG. 5C, the wafer W is fragmented into a chip S. The adhesive layer 5 is also individualized to become an adhesive piece 5P. Examples of the dicing method include a method using a dicing blade or a laser. The wafer W may be thinned by grinding the wafer W prior to dicing the wafer W.

After dicing, the adhesive layer 3 is separated from each other by expanding the base material layer 1 under normal temperature or cooling conditions as shown in FIG. 5D without irradiating the pressure-sensitive adhesive layer 3 with active energy rays. The adhesive piece 5P is peeled from the adhesive layer 3 by pushing it up with the pin 42, and the DAF 8 is sucked and picked up by the suction collet 44.

The manufacturing method of the semiconductor device 100 will be specifically described with reference to FIGS. 6 to 8. First, as shown in FIG. 6, the first-stage chip S1 (chip S) is crimped to a predetermined position on the substrate 70 via the adhesive piece 5P. Next, the adhesive piece 5P is cured by heating. As a result, the adhesive piece 5P is cured to become a cured product 5C. The curing treatment of the adhesive piece 5P may be carried out in a pressurized atmosphere from the viewpoint of reducing voids.

The second-stage chip S2 is mounted on the surface of the chip S1 in the same manner as the mounting of the chip S1 on the substrate 70. Further, the structure 60 shown in FIG. 7 is manufactured by mounting the third-stage and fourth-stage chips S3 and S4. After the chips S1, S2, S3, S4 and the substrate 70 are electrically connected by wires W1, W2, W3, W4 (see FIG. 8), the semiconductor element and the wire are sealed by the sealing layer 50. The semiconductor device 100 shown in 4 is completed.

Although the embodiments of the present disclosure have been described in detail above, the present invention is not limited to the above embodiments. For example, in the above embodiment, the film 10 including the base material layer 1, the pressure-sensitive adhesive layer 3, and the adhesive layer 5 in this order has been exemplified, but the film 10 may not include the adhesive layer 5. .. Further, the film 10 may further include a cover film (not shown) that covers the adhesive layer 5.

Hereinafter, the present disclosure will be described in more detail based on Examples, but the present invention is not limited to these Examples. Unless otherwise specified, all chemicals used were reagents.

<Example 1>
[Synthesis of acrylic resin (Production Example 1)]
The following components were placed in a flask with a capacity of 2000 ml equipped with a three-one motor, a stirring blade, and a nitrogen introduction tube.
-Ethyl acetate (solvent): 635 g
2-Ethylhexyl acrylate: 395 g
2-Hydroxyethyl acrylate: 100 g
・ Methacrylic acid: 5g
-Azobisisobutyronitrile: 0.08 g

After stirring the contents until they were sufficiently uniform, bubbling was carried out at a flow rate of 500 ml / min for 60 minutes to degas the dissolved oxygen in the system. The temperature was raised to 78 ° C. over 1 hour, and after the temperature was raised, polymerization was carried out for 6 hours. Next, the reaction solution was transferred to a pressure kettle having a capacity of 2000 ml equipped with a three-one motor, a stirring blade, and a nitrogen introduction tube, heated at 120 ° C. and 0.28 MPa for 4.5 hours, and then at room temperature (25 ° C., the same applies hereinafter). ).

Next, 490 g of ethyl acetate was added, and the mixture was stirred and diluted. To this, 0.025 g of methquinone as a polymerization inhibitor and 0.10 g of dioctyltin dilaurate as a urethanization catalyst were added, and then 2-methacryloyloxyethyl isocyanate (manufactured by Showa Denko Co., Ltd., Karens MOI (trade name)) was added 42. After adding 5.5 g and reacting at 70 ° C. for 6 hours, the mixture was cooled to room temperature. Next, ethyl acetate was added to adjust the non-volatile content in the acrylic resin solution to 35% by mass to obtain a solution containing (A) acrylic resin (Production Example 1) having a functional group capable of chain polymerization. ..

The solution containing the acrylic resin (A) obtained as described above was vacuum dried at 60 ° C. overnight. The solid content obtained by this was elementally analyzed by a fully automatic elemental analyzer (manufactured by Elemental Co., Ltd., trade name: varioEL), and the content of the introduced 2-methacryloyloxyethyl isocyanate was calculated from the nitrogen content. , 0.50 mmol / g.

In addition, the polystyrene-equivalent weight average molecular weight of (A) acrylic resin was determined using the following apparatus. That is, SD-8022 / DP-8020 / RI-8020 manufactured by Tosoh Corporation was used, Gelpack GL-A150-S / GL-A160-S manufactured by Hitachi Chemical Co., Ltd. was used for the column, and tetrahydrofuran was used as the eluent. GPC measurement was performed. As a result, the polystyrene-equivalent weight average molecular weight was 800,000. The hydroxyl value and acid value measured according to the method described in JIS K0070 were 61.1 mgKOH / g and 6.5 mgKOH / g. These results are summarized in Table 1.

[Preparation of dicing film (adhesive layer)]
A varnish for forming an adhesive layer was prepared by mixing the following components (see Table 2). The amount of ethyl acetate (solvent) was adjusted so that the total solid content of the varnish was 25% by mass.
(A) Acrylic resin solution (Production Example 1): 100 g (solid content)
(B) Photopolymerization initiator (1-hydroxycyclohexylphenyl ketone, manufactured by Tivas Specialty Chemicals Co., Ltd., Irgacure 184, "Irgacure" is a registered trademark): 0.8 g
(B) Photopolymerization initiator (bis (2,4,6-trimethylbenzoyl) -phenylphosphine oxide, manufactured by Tivas Specialty Chemicals Co., Ltd., Irgacure 819, "Irgacure" is a registered trademark): 0.2 g
(C) Crosslinking agent (polyfunctional isocyanate, manufactured by Nippon Polyurethane Industry Co., Ltd., coronate L, solid content: 75%): 8.0 g (solid content)
・ Ethyl acetate (solvent)

A polyethylene terephthalate film (width 450 mm, length 500 mm, thickness 38 μm) having a mold release treatment on one surface was prepared. A varnish for forming an adhesive layer was applied to the surface subjected to the mold release treatment using an applicator, and then dried at 80 ° C. for 5 minutes. As a result, a laminate (dicing film) composed of a polyethylene terephthalate film and an adhesive layer having a thickness of 30 μm formed on the polyethylene terephthalate film was obtained.

A polyolefin film (width 450 mm, length 500 mm, thickness 80 μm) having a corona treatment on one surface was prepared. The surface treated with corona and the adhesive layer of the laminated body were bonded together at room temperature. Then, the pressure-sensitive adhesive layer was transferred to the polyolefin film (cover film) by pressing with a rubber roll. Then, it was left at room temperature for 3 days to obtain a dicing film with a cover film.

[Preparation of die bonding film (adhesive layer A)]
First, cyclohexanone (solvent) was added to the following composition, and the mixture was stirred and mixed, and then kneaded for 90 minutes using a bead mill.
-Epoxy resin (YDCN-700-10 (trade name), Cresol novolac type epoxy resin manufactured by Nippon Steel & Sumitomo Metal Chemical Co., Ltd., epoxy equivalent 210, molecular weight 1200, softening point 80 ° C.): 14 parts by mass-phenol resin (Millex XLC-LL) (Product name), manufactured by Mitsui Chemicals, Inc., phenol resin, hydroxyl group equivalent 175, water absorption rate 1.8%, heating weight reduction rate at 350 ° C. 4%): 23 parts by mass, silane coupling agent (NUC A-189 (NUC A-189) Product name) γ-mercaptopropyltrimethoxysilane manufactured by NUC Co., Ltd.): 0.2 parts by mass silane coupling agent (NUCA-1160 (trade name), manufactured by Nippon Unicar Co., Ltd., γ-ureidopropyltriethoxysilane) : 0.1 part by mass / filler ("SC2050-HLG (trade name), manufactured by Admatex Co., Ltd., silica, average particle size 0.500 μm): 32 parts by mass

After adding the following components to the composition obtained as described above, a varnish for forming an adhesive layer was obtained through the steps of stirring and mixing and vacuum degassing.
・ Epoxy group-containing acrylic copolymer (HTR-860P-3 (trade name), manufactured by Nagase ChemteX Corporation, weight average molecular weight 800,000): 16 parts by mass ・ Curing accelerator (Curesol 2PZ-CN (trade name), 1-Cyanoethyl-2-phenylimidazole manufactured by Shikoku Kasei Kogyo Co., Ltd., "Curesol" is a registered trademark) 0.0.1 parts by mass

A polyethylene terephthalate film (thickness 35 μm) having a mold release treatment on one surface was prepared. A varnish for forming an adhesive layer was applied to the surface subjected to the mold release treatment using an applicator, and then heat-dried at 140 ° C. for 5 minutes. As a result, a laminate (die bonding film) composed of a polyethylene terephthalate film (carrier film) and an adhesive layer (B stage state) having a thickness of 20 μm formed therein was obtained.

[Preparation of dicing / die bonding integrated film]
A die bonding film composed of an adhesive layer and a carrier film was cut into a circle having a diameter of 335 mm together with the carrier film. A dicing film from which the polyethylene terephthalate film was peeled off was attached to this at room temperature, and then left at room temperature for 1 day. Then, the dicing film was cut into a circle having a diameter of 370 mm. The region (first region of the adhesive layer) corresponding to the bonding position of the wafer in the adhesive layer of the dicing / die bonding integrated film thus obtained was irradiated with ultraviolet rays as follows. That is, a pulsed xenon lamp was used to partially irradiate ultraviolet rays at an irradiation amount of 70 W and 150 mJ / cm ² . An ultraviolet ray was irradiated to a portion having an inner diameter of 318 mm from the center of the film using a blackout curtain. In this way, a plurality of dicing / die bonding integrated films for use in various evaluation tests described later were obtained.

<Example 2>
The irradiation amount of ultraviolet rays instead of the 150 mJ / cm ^2, other that was 300 mJ / cm ² in the same manner as in Example 1 to obtain a plurality of dicing die bonding integrated film.

<Example 3>
The irradiation amount of ultraviolet rays instead of the 150 mJ / cm ^2, other that was 500 mJ / cm ² in the same manner as in Example 1 to obtain a plurality of dicing die bonding integrated film.

<Example 4>
As the die bonding film, a plurality of dicing die bonding is carried out in the same manner as in Example 1 except that a film having an adhesive layer B formed as follows is used instead of the one having the adhesive layer A. An integral film was obtained.
[Preparation of die bonding film (adhesive layer B)]
First, cyclohexanone (solvent) was added to the following components, and the mixture was stirred and mixed, and then kneaded for 90 minutes using a bead mill.
-Filler ("SC2050-HLG (trade name), manufactured by Admatex Co., Ltd., silica, average particle size 0.500 μm): 50 parts by mass Add the following components to the composition obtained as described above, and then stir. A varnish for forming an adhesive layer was obtained through the steps of mixing and vacuum degassing.
-Epoxy group-containing acrylic copolymer (HTR-860P-3 (trade name), manufactured by Nagase ChemteX Corporation, weight average molecular weight 800,000): 100 parts by mass-curing accelerator (Curesol 2PZ-CN (trade name), 1-Cyanoethyl-2-phenylimidazole manufactured by Shikoku Kasei Kogyo Co., Ltd., "Curesol" is a registered trademark) 0.1 parts by mass

<Example 5>
Instead of the raw material monomer composition shown in Production Example 1 in Table 1, the raw material monomer composition shown in Production Example 2 was used, and a solution of the acrylic resin (A) according to Production Example 2 produced by the same method as Production Example 1 was obtained. A plurality of dicing / die bonding integrated films were obtained in the same manner as in Example 2 except that this solution was used.

<Example 6>
Except for the fact that the amount of the cross-linking agent in the pressure-sensitive adhesive layer was 4.0 parts by mass instead of 8.0 parts by mass, and the irradiation amount of ultraviolet rays was 500 mJ / cm ² instead of 300 mJ / cm ^2. A plurality of dicing / die bonding integrated films were obtained in the same manner as in Example 5.

<Example 7>
Instead of the raw material monomer composition shown in Production Example 1 in Table 1, the raw material monomer composition shown in Production Example 3 was used, and a solution of the acrylic resin (A) according to Production Example 3 produced by the same method as Production Example 1 was obtained. A plurality of dicing / die bonding integrated films were obtained in the same manner as in Example 2 except that this solution was used.

<Example 8>
Instead of the raw material monomer composition shown in Production Example 1 in Table 1, the raw material monomer composition shown in Production Example 4 was used, and a solution of the acrylic resin (A) according to Production Example 4 produced by the same method as Production Example 1 was obtained. A plurality of dicing / die bonding integrated films were obtained in the same manner as in Example 3 except that this solution was used.

<Comparative example 1>
A plurality of dicing / die bonding integrated films were obtained in the same manner as in Example 1 except that the amount of the cross-linking agent in the pressure-sensitive adhesive layer was 15.0 parts by mass instead of 8.0 parts by mass.

<Comparative example 2>
A plurality of dicing / die bonding integrated films were obtained in the same manner as in Example 5 except that the irradiation amount of ultraviolet rays was 500 mJ / cm ² instead of 300 mJ / cm ² .

<Comparative example 3>
Other possible was 150 mJ / cm ² instead of the irradiation amount of ultraviolet rays with 500 mJ / cm ² in the same manner as in Example 8, to obtain a plurality of dicing die bonding integrated film.

<Comparative example 4>
Instead of the raw material monomer composition shown in Production Example 1 in Table 1, the raw material monomer composition shown in Production Example 5 was used, and a solution of the acrylic resin (A) according to Production Example 5 produced by the same method as Production Example 1 was obtained. A plurality of dicing / die bonding integrated films were obtained in the same manner as in Example 1 except that this solution was used and not irradiated with ultraviolet rays.

[Evaluation test]
(1) Measurement of Adhesive Strength (30 ° Peel Strength) of Adhesive Layer to Adhesive Layer The adhesive strength of the adhesive layer (ultraviolet irradiation region) to the adhesive layer was evaluated by measuring the 30 ° peel strength. That is, a measurement sample having a width of 25 mm and a length of 100 mm was cut out from the dicing / die bonding integrated film. The measurement sample was a laminate of an adhesive layer (ultraviolet irradiation region) and an adhesive layer. The peel strength of the adhesive layer (ultraviolet irradiation region) with respect to the adhesive layer was measured using a tensile tester. The measurement conditions were a peeling angle of 30 ° and a tensile speed of 60 mm / min. The sample was stored and the peel strength was measured in an environment of a temperature of 23 ° C. and a relative humidity of 40%.

(2) Measurement of 15 ° peel strength of the adhesive layer with respect to the adhesive layer The above 30 ° peel except that the peeling angle is 15 ° and the tensile speed is 150 mm / min (2.5 mm / sec). The 15 ° peel strength was measured in the same manner as the strength measurement. The measurement conditions are the same as those described in claim 1 of Patent Document 1.

(3) Measurement of Adhesive Strength (90 ° Peel Strength) of Adhesive Layer to Stainless Substrate The adhesive strength of the adhesive layer (non-irradiated region to ultraviolet rays) to the stainless substrate was evaluated by measuring 90 ° peel strength. That is, a measurement sample having a width of 25 mm and a length of 100 mm was cut out from the dicing / die bonding integrated film. The measurement sample was a laminate of an adhesive layer (ultraviolet non-irradiated region) and an adhesive layer. After the surface of the sample on the adhesive layer side is attached to a stainless steel substrate (SUS430BA), the peel strength of the adhesive layer (ultraviolet non-irradiated region) with respect to the stainless steel substrate using the autograph "AGS-1000" manufactured by Shimadzu Corporation. Was measured. The measurement conditions were a peeling angle of 90 ° and a peeling speed of 50 mm / min.

(4) Evaluation of dicing property A dicing / die bonding integrated film was bonded to a wafer (diameter: 8 inches, thickness: 50 μm) under the condition of 80 ° C. × 10 seconds. Then, the wafer was diced under the following conditions.
<Dicing conditions>
-Dicer: DFD-651 manufactured by DISCO
-Blade: 27HECC manufactured by DISCO
・ Blade rotation speed: 40,000 rpm
・ Dicing speed: 30 mm / sec
・ Dicing depth: 25 μm
-Cut mode: Down-cut dicing size: 1.0 mm x 1.0 mm

(Evaluation of peeling of adhesive pieces from the adhesive layer)
At the time of dicing, it was confirmed whether or not the adhesive piece was peeled off from the adhesive layer. A sample in which the jumping of the laminate and the peeling were not observed during dicing of one wafer was evaluated as "A", and the sample in which the skipping of the laminate or the peeling was observed even in a small area was evaluated. It was evaluated as "B".

(Evaluation of chip peeling from the adhesive layer)
It was confirmed whether or not the chips were peeled off from the adhesive layer during dicing. A sample in which chip skipping occurred even once during dicing of one wafer was evaluated as "A", and a sample in which chip skipping occurred even once was evaluated as "B".

(crack)
The cut cross section of the chip after dicing was confirmed with a microscope, and it was evaluated whether or not the chip was chipped. The cut cross sections of 25 chips were observed, and the sample in which no chipping was observed was evaluated as "A", and the sample in which even a slight chipping was observed was evaluated as "B".

(Regarding the presence or absence of ring peeling)
It was visually evaluated whether or not the phenomenon of the dicing ring peeling from the adhesive layer (ring peeling) occurred during dicing. The sample in which the ring peeling did not occur was evaluated as "A", and the sample in which the ring peeling occurred was evaluated as "B".

(5) Evaluation of pick-up property The pick-up property of the chip after the dicing process was evaluated using a lexible die bonder "DB-730" manufactured by Renesas East Japan Semiconductor. "RUBBER TIP 13-087E-33 (size: 1 x 1 mm)" manufactured by Micromechanics is used for the collet for pickup, and "EJECTOR NEEDLE SEN2-83-05 (diameter)" manufactured by Micromechanics is used for the push-up pin. : 0.7 mm, tip shape: semicircle with a diameter of 350 μm) ”was used. One push-up pin was placed in the center. The pick-up property was evaluated under the conditions of a pin push-up speed of 10 mm / sec and a push-up height of 75 μm at the time of pickup. 100 chips are picked up in succession, and the case where no chip cracking or pickup error occurs is evaluated as "A", and the case where even one chip has chip cracking or pickup error is evaluated as "B". did. For the sample in which the ring peeled off during dicing, an integrated sample was prepared again, the ring contact portion was reinforced with an adhesive tape, and dicing was performed, and then evaluation was performed.

According to the present disclosure, it can be applied to a process of dicing a wafer into a large number of small chips, DAF skipping in the dicing process can be sufficiently suppressed, and dicing die bonding provided with an adhesive layer having excellent pick-up property. An integrated film is provided. Further, according to the present disclosure, a method for manufacturing a dicing / die bonding integrated film and a method for manufacturing a semiconductor device using the film are provided.

1 ... base material layer, 3 ... adhesive layer, 3a ... first region, 3b ... second region, 5 ... adhesive layer, 5P ... adhesive piece, 5C ... cured product, 8 ... DAF, 10 ... dicing Die bonding integrated film, 70 ... substrate, 100 ... semiconductor device, DR ... dicing ring, F1 ... first surface, F2 ... second surface, S, S1, S2, S3, S4 ... chip, W ... wafer

Claims (13)

A base material layer, an adhesive layer having a first surface facing the base material layer and a second surface on the opposite side thereof, and a pressure-sensitive adhesive layer provided so as to cover the central portion of the second surface of the pressure-sensitive adhesive layer. The process of preparing a dicing / die bonding integrated film with the adhesive layer,
A step of attaching a wafer to the adhesive layer of the dicing / die bonding integrated film and attaching a dicing ring to the second surface of the adhesive layer.
A step of separating the wafer into a plurality of chips having an area of 9 mm ² or less, and
A step of picking up the chip from the adhesive layer together with an adhesive piece obtained by separating the adhesive layer into individual pieces.
The step of mounting the chip on a substrate or another chip via the adhesive piece, and
Including
The pressure-sensitive adhesive layer has a first region in the adhesive layer to which the wafer is attached and a second region to which the dicing ring is attached.
The first region is a region in which the adhesive strength is reduced as compared with the second region by irradiation with active energy rays.
The adhesive force of the first region to the adhesive layer, measured at a temperature of 23 ° C. under the conditions of a peeling angle of 30 ° and a peeling speed of 60 mm / min, is 1.2 N / 25 mm or more and 4.5 N / 25 mm or less. Manufacturing method for semiconductor devices. The semiconductor device according to claim 1, wherein the adhesive strength of the second region to the stainless steel substrate, which is measured under the conditions of a peeling angle of 90 ° and a peeling speed of 50 mm / min at a temperature of 23 ° C., is 0.2 N / 25 mm or more. Manufacturing method. The method for manufacturing a semiconductor device according to claim 1 or 2, wherein the plurality of chips have a square or rectangular shape and have sides of 3 mm or less. The first and second regions of the pressure-sensitive adhesive layer consist of the same composition before irradiation with active energy rays.
Any of claims 1 to 3, wherein the first region is formed through a step of irradiating the region to be the first region with an amount of active energy rays of 10 to 1000 mJ / cm ^2. The method for manufacturing a semiconductor device according to item 1. Base layer and
An adhesive layer having a first surface facing the base material layer and a second surface on the opposite side thereof,
An adhesive layer provided so as to cover the central portion of the second surface, and
With
The pressure-sensitive adhesive layer has a first region including at least a region corresponding to a wafer sticking position in the adhesive layer, and a second region located so as to surround the first region.
The first region is a region in which the adhesive strength is reduced as compared with the second region by irradiation with active energy rays.
The adhesive strength of the first region to the adhesive layer, measured at a temperature of 23 ° C. under the conditions of a peeling angle of 30 ° and a peeling speed of 60 mm / min, is 1.2 N / 25 mm or more and 4.5 N / 25 mm or less. Dicing / die bonding integrated film. The dicing according to claim 5, wherein the adhesive strength of the second region to the stainless steel substrate, which is measured at a temperature of 23 ° C. under the conditions of a peeling angle of 90 ° and a peeling speed of 50 mm / min, is 0.2 N / 25 mm or more. Die bonding integrated film. The dicing / die bonding integrated film according to claim 5 or 6, which is applied to a semiconductor device manufacturing process including a step of fragmenting a wafer into a plurality of chips having an area of 9 mm ² or less. The second region contains a (meth) acrylic resin having a functional group capable of chain polymerization.
The functional group is at least one selected from an acryloyl group and a methacryloyl group.
The dicing / die bonding integrated film according to any one of claims 5 to 7, wherein the content of the functional group in the second region is 0.1 mmol / g to 1.2 mmol / g. The second region contains a cross-linking agent and
The dicing / die bonding integrated film according to any one of claims 5 to 8, wherein the content of the cross-linking agent in the second region is 0.1 to 20% by mass. The dicing according to claim 9, wherein the cross-linking agent is a reaction product of a polyfunctional isocyanate having two or more isocyanate groups in one molecule and a polyhydric alcohol having three or more OH groups in one molecule. -Die bonding integrated film. The dicing die according to any one of claims 5 to 10, wherein the adhesive layer comprises a composition containing an energy-curable group-containing (meth) acrylic copolymer, a curing accelerator, and a filler. Bonding integrated film. The method for producing a dicing / die bonding integrated film according to any one of claims 5 to 11.
A laminate containing a pressure-sensitive adhesive layer made of a composition whose adhesive strength is reduced by irradiation with active energy rays on the surface of the base material layer, and the adhesive layer formed on the surface of the pressure-sensitive adhesive layer. The process of making the body and
A step of irradiating a region to be the first region of the pressure-sensitive adhesive layer contained in the laminate with active energy rays.
A method for producing a dicing / die bonding integrated film, which comprises the above in this order. The method for producing a dicing / die bonding integrated film according to any one of claims 5 to 11.
A step of forming a pressure-sensitive adhesive layer composed of a composition whose adhesive strength is reduced by irradiation with active energy rays on the surface of the base material layer, and
A step of irradiating the region to be the first region of the pressure-sensitive adhesive layer with active energy rays,
A step of laminating the adhesive layer on the surface of the adhesive layer after irradiation with the active energy rays, and
A method for producing a dicing / die bonding integrated film, which comprises the above in this order.

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