KR101894690B1 - Tape for semiconductor processing - Google Patents

Abstract

[PROBLEMS] To provide a tape for semiconductor processing which has a low heat shrinkage ratio, does not enter a wrinkle, does not deviate in chip position, and has a sufficiently wide cuff width in a tape shrinking process. [MEANS FOR SOLVING PROBLEMS] A pressure-sensitive adhesive tape comprising a base film and a pressure-sensitive adhesive layer formed on at least one side of the base film, wherein in the step of dividing the adhesive by expansion, the pressure- Wherein the relationship between the stress exerted only on the base material at 10% stretching and the stress of the pressure-sensitive adhesive tape is equal to or less than the stress exerted only on the pressure-sensitive adhesive tape / substrate.

Description

Tape for semiconductor processing

TECHNICAL FIELD The present invention relates to a tape for semiconductor processing having excellent pick-up properties.

Background Art [0002] Conventionally, in a semiconductor device manufacturing process such as an integrated circuit (IC: Integrated Circuit), a back grinding process for grinding the back surface of a wafer in order to thin a wafer after forming a circuit pattern, a process for attaching a tape for semiconductor processing, A dicing step for dividing the wafer into chips, an expanding step for expanding the semiconductor processing tape, a pick-up step for picking up the separated chip, a step for bonding the picked-up chip to a lead frame or a package substrate Alternatively, in the stack package, a die bonding process is performed in which chips are stacked and bonded.

In the back grind step, a surface protection tape is used to protect the circuit pattern formation surface (wafer surface) of the wafer from contamination. When the surface protection tape is peeled from the wafer surface after the back grinding of the wafer is finished, the semiconductor processing tape (dicing die bonding tape) described below is bonded to the back surface of the wafer, The tape side is fixed and the surface protective tape is subjected to a treatment for lowering the adhesive force to the wafer and then the surface protective tape is peeled off. The wafer on which the surface protective tape has been peeled is then collected from the adsorption table in the state where the semiconductor processing tape is adhered to the back surface and is provided to the next dicing step. The treatment for lowering the adhesive force is energy ray irradiation treatment when the surface protective tape is composed of an energy ray curable component such as ultraviolet rays and heat treatment when the surface protective tape is composed of a thermosetting component.

In the dicing step to the mounting step after the back grinding step, a semiconductor processing tape in which a pressure-sensitive adhesive layer and an adhesive layer are laminated in this order on a base film is used. Generally, when such a semiconductor processing tape is used, first, an adhesive layer of a semiconductor processing tape is bonded to the back surface of the wafer to fix the wafer, and the wafer and the adhesive layer are diced by chip using a dicing blade. Thereafter, as the tape is expanded in the radial direction of the wafer, an enlarging process is performed to widen the interval between the chips. This expansion process is carried out in order to improve the recognizability of the chip by the CCD camera or the like in the subsequent pick-up process and to prevent the chip from being damaged due to contact between adjacent chips when picking up the chip. Thereafter, the chip is picked up from the pressure-sensitive adhesive layer together with the adhesive layer in the pick-up process, and is directly bonded to the lead frame or the package substrate in the mounting process. As described above, by using the tape for semiconductor processing, it is possible to directly adhere the chip with the adhesive layer to the lead frame or the package substrate, so that the step of applying the adhesive or the step of adhering the die bonding film to each chip is omitted .

However, in the dicing step, as described above, since the wafer and the adhesive layer are diced together using the dicing blade, not only the cutting debris of the wafer but also the cutting residue of the adhesive layer is generated. Further, when the cutting residue of the adhesive layer is piled up in the dicing grooves of the wafer, there is a problem that chips are stuck to each other to cause pick-up failure or the like, and the yield of the semiconductor device is lowered.

In order to solve such a problem, there has been proposed a method of dividing the adhesive layer into individual chips by dicing only the wafer by the blade in the dicing step and expanding the tape for semiconductor processing in the expansion step (see, for example, One). According to this method of dividing the adhesive layer using the tension at the time of expansion, there is no occurrence of cutting residue of the adhesive, and the pickup process is not adversely affected.

In recent years, as a wafer cutting method, a so-called stealth dicing method has been proposed in which a wafer can be cut in a noncontact manner by using a laser processing apparatus. For example, in Patent Document 2, as a stealth dicing method, laser light is irradiated to a semiconductor substrate with an adhesive layer (die bond resin layer) interposed therebetween and a focal light is irradiated to the inside of the semiconductor substrate A method of cutting a semiconductor substrate comprising the steps of forming a modified region by photon absorption and making the modified region into a portion to be cut and extending the sheet to cut the semiconductor substrate and the adhesive layer along the portion to be cut have.

As a method for cutting another wafer using a laser processing apparatus, for example, Patent Document 3 discloses a method of cutting a wafer by bonding a die bonding adhesive layer (adhesive film) to the back surface of the wafer, A step of applying a stretchable protective adhesive tape to the adhesive layer side, a step of dividing the protective adhesive tape into individual chips by irradiating a laser beam along the street from the surface of the wafer bonded with the protective adhesive tape, A step of applying a tensile force to the layer to break the adhesive layer by chips and a step of separating the wafer from the protective adhesive tape in which the chip with the broken adhesive layer is bonded is proposed.

According to the wafer cutting methods described in Patent Documents 2 and 3, since the wafer is cut in a noncontact manner by irradiation of laser light and expansion of the tape, when the physical load on the wafer is small and the blade dicing, It is possible to cut the wafer without generating wafer cutting debris (chipping) such as a wafer. Further, since the adhesive layer is divided by expansion, no cutting residue of the adhesive layer is generated. For this reason, attention has been attracting attention as an excellent technique that can replace blade dicing.

In Patent Document 4, in order to prevent the intervals of individual chips from becoming unstable due to loosening after expansion, the tape is heated and contracted and tensed after the dividing step so that the interval between chips (hereinafter, Quot;) is maintained.

Patent Document 1: JP-A-2007-5530 Patent Document 2: JP-A-2003-338467 Patent Document 3: JP-A-2004-273895 Patent Document 4: Japanese Laid-Open Patent Publication No. 2011-216508

On the other hand, the expansion of the cuff width can not be maintained in the shrinking process, and there is a problem that defects are generated in the pickup process as the adhesive layer is reattached.

The present invention provides a tape for semiconductor processing which does not deviate in chip position in the tape shrinking process and sufficiently enlarges the cuff width and is excellent in pickupability.

That is, the present invention provides a pressure-sensitive adhesive tape comprising a base film and an adhesive layer provided on at least one side of the base film, wherein in the step of dividing the adhesive by expanding, the adhesive tape is peeled off by a method determined by JIS 7162, The relationship between the stress only in the base material and the stress in the pressure-sensitive adhesive tape at the elongation of 10%

Stress of adhesive tape / stress only in substrate = 1 or less

To a tape for semiconductor processing.

Further, in the above semiconductor processing tape,

(a) a step of bonding a surface protection tape to a wafer surface on which a circuit pattern is formed,

(b) a back grinding step of grinding the back surface of the wafer,

(c) a step of bonding the adhesive layer of the tape for semiconductor processing to the back surface of the wafer while heating the wafer,

(d) peeling the surface protection tape from the wafer surface,

(e) irradiating a laser beam to a portion of the wafer to be divided to form a modified region by multiphoton absorption in the wafer,

(f) expanding the semiconductor processing tape to divide the wafer and the adhesive layer of the semiconductor processing tape along a division line to obtain a plurality of chips to which the adhesive layer is attached;

(g) a step of heat-shrinking a portion of the semiconductor processing tape after expansion that is not overlapped with the chip to thereby remove the loosening caused in the expansion step,

(h) picking up the chip with the adhesive layer from the pressure-sensitive adhesive layer of the semiconductor processing tape.

Further, in the above semiconductor processing tape,

(a) a step of bonding a surface protection tape to a wafer surface on which a circuit pattern is formed,

(b) a back grinding step of grinding the back surface of the wafer,

(c) a step of bonding the adhesive layer of the tape for semiconductor processing to the back surface of the wafer while heating the wafer,

(d) peeling the surface protection tape from the wafer surface,

(e) irradiating a laser beam along a dividing line of the wafer surface to divide the wafer into chips,

(f) an expanding step of dividing the adhesive layer by the chip by expanding the semiconductor processing tape to obtain a plurality of chips to which the adhesive layer is attached;

(g) a step of heat-shrinking a portion of the semiconductor processing tape after expansion that is not overlapped with the chip to thereby remove the loosening caused in the expansion step,

(h) picking up the chip to which the adhesive layer is attached from a pressure-sensitive adhesive layer of the semiconductor processing tape. The present invention also relates to a tape for semiconductor processing, which is used in a manufacturing method of a semiconductor device.

Further, in the above semiconductor processing tape,

(a) a step of bonding a surface protection tape to a wafer surface on which a circuit pattern is formed,

(b) a back grinding step of grinding the back surface of the wafer,

(c) a step of bonding the adhesive layer of the tape for semiconductor processing to the back surface of the wafer while heating the wafer,

(d) peeling the surface protection tape from the wafer surface,

(e) cutting the wafer along a dividing line using a dicing blade and dividing the wafer into chips,

(f) an expanding step of dividing the adhesive layer by the chip by expanding the semiconductor processing tape to obtain a plurality of chips to which the adhesive layer is attached;

(g) a step of heat-shrinking a portion of the semiconductor processing tape after expansion that is not overlapped with the chip to thereby eliminate a sag occurring in the expansion process, thereby maintaining the spacing of the chips;

(h) picking up the chip to which the adhesive layer is attached from a pressure-sensitive adhesive layer of the semiconductor processing tape. The present invention also relates to a tape for semiconductor processing, which is used in a manufacturing method of a semiconductor device.

Further, in the above semiconductor processing tape,

(a) a step of bonding a dicing tape to a back surface of a wafer on which a circuit pattern is formed and cutting the wafer to a depth less than the wafer thickness along a line to be divided using a dicing blade,

(b) a step of bonding a surface protective tape to the surface of the wafer,

(c) a back grinding step of peeling off the dicing tape, grinding the back surface of the wafer and dividing the wafer back into chips,

(d) a step of bonding the adhesive layer of the tape for semiconductor processing to the back surface of the wafer divided by the chips while the wafer is heated,

(e) peeling the surface protective tape from the wafer surface divided by the chip,

(f) an expanding step of dividing the adhesive layer by the chip by expanding the semiconductor processing tape to obtain a plurality of chips to which the adhesive layer is attached;

(g) a step of heat-shrinking a portion of the semiconductor processing tape after the extension which does not overlap with the chip to thereby eliminate the sag occurring in the expansion process, thereby maintaining the spacing of the chips;

(h) picking up the chip to which the adhesive layer is attached from the pressure-sensitive adhesive layer of the semiconductor processing tape.

Further, in the above semiconductor processing tape,

(a) a step of bonding a surface protection tape to a wafer surface on which a circuit pattern is formed,

(b) a step of irradiating laser light to a part to be divided of the wafer to form a modified region by multiphoton absorption in the wafer,

(c) a back grinding step of grinding the back surface of the wafer,

(d) a step of bonding the adhesive layer of the semiconductor processing tape to the back surface of the wafer in a state in which the wafer is heated,

(e) peeling the surface protection tape from the wafer surface,

(f) expanding the semiconductor processing tape to divide the wafer and the adhesive layer of the semiconductor processing tape along a division line to obtain a plurality of chips to which the adhesive layer is attached;

(g) a step of heat-shrinking a portion of the semiconductor processing tape after the extension which does not overlap with the chip to thereby eliminate the sag occurring in the expansion process, thereby maintaining the spacing of the chips;

(h) picking up the chip to which the adhesive layer is attached from a pressure-sensitive adhesive layer of the semiconductor processing tape. The present invention also relates to a tape for semiconductor processing, which is used in a manufacturing method of a semiconductor device.

The present invention also relates to a semiconductor device using the above-described semiconductor processing tape.

By using the tape for semiconductor processing provided by the present invention, the cuff width can be uniformly expanded without being changed, so that a highly reliable semiconductor device in which the chip position does not deviate and no pickup problem occurs can be obtained.

1 is a cross-sectional view schematically showing the structure of a tape for semiconductor processing according to an embodiment of the present invention.
2 is a cross-sectional view showing a state in which a surface protection tape is bonded to a wafer.
3 is a cross-sectional view for explaining a step of bonding a wafer and a ring frame to a semiconductor processing tape according to an embodiment of the present invention.
4 is a cross-sectional view for explaining a step of peeling the surface protection tape from the surface of the wafer.
5 is a cross-sectional view showing a state where a modified region is formed on a wafer by laser machining.
6 (a) is a cross-sectional view showing a state in which a semiconductor processing tape according to an embodiment of the present invention is mounted on an expansion device. (b) is a cross-sectional view showing a process of dividing a wafer into chips by expansion of a semiconductor processing tape. (c) is a cross-sectional view showing a semiconductor processing tape, an adhesive layer and a chip after expansion.
7 is a cross-sectional view for explaining a heat shrinking process.

<Tape for semiconductor processing>

1 is a cross-sectional view showing a tape 10 for semiconductor processing according to an embodiment of the present invention. In the semiconductor processing tape 10 of the present invention, when the wafer is divided into chips by expansion, the adhesive layer 13 is divided along the chip. The tape 10 for semiconductor processing has an adhesive tape 15 composed of a base film 11 and a pressure sensitive adhesive layer 12 provided on the base film 11 and an adhesive layer 13 provided on the pressure sensitive adhesive layer 12, And the back surface of the wafer is adhered to the adhesive layer 13. Each of the layers may be cut (pre-cut) into a predetermined shape in advance in accordance with the use process or apparatus. Further, the semiconductor processing tape 10 of the present invention may be cut in a piece per wafer, or may be formed by winding a long sheet having a plurality of cut pieces per wafer, rolled up in a roll shape.

The tape for semiconductor processing according to the present invention has an adhesive tape having a base film and a pressure-sensitive adhesive layer formed on at least one side of the base film, and in the step of dividing the adhesive due to expansion, the pressure-sensitive adhesive tape is subjected to a method defined in JIS 7162 In the following tensile test, the relation between the stress exerted only on the substrate and the stress on the adhesive tape when the tensile elongation was 10%

Stress of adhesive tape / stress only in substrate = 1 or less

It is necessary to satisfy the following condition.

Specifically, a sample having a width of 25 mm was prepared, and a value held at 60 mm after stretching 5 mm, that is, 10% at a rate of 100 mm / min, was attached to a tensile tester so that the distance between chucks was 50 mm.

The above "stress of the adhesive tape" refers to the stress of the semiconductor processing tape 10 of the present invention taken from the expansion process of the semiconductor device manufacturing method.

The "stress only on the substrate" is the stress of the base film 11 only before the pressure-sensitive adhesive layer 12 is provided on the base film 11.

By satisfying the above condition, the cuff width is sufficiently ensured and the wrinkles are not generated, and the chip position is not shifted, so that the pickup can be performed well.

If the stress value of only the stress / substrate of the pressure-sensitive adhesive tape exceeds 1, the cuff width is not ensured sufficiently or is not uniform, resulting in poor pick-up properties.

There are various methods for controlling the physical properties of the semiconductor tape within this range. However, it is preferable to carry out the energy ray hardening treatment before the expansion treatment, or the known biaxial extrusion method, Can be adjusted.

Hereinafter, the structure of each layer of the semiconductor processing tape will be described.

<Base film>

The base film 11 is preferable from the viewpoint that the wafer can be cut without deviating in the forward direction in the expansion process if it has uniform and isotropic expandability, and the material thereof is not particularly limited. In general, a crosslinked resin has a large restoring force against tensile as compared with an uncrosslinked resin, and a large shrinkage stress when heat is applied to the expanded state after the expansion step. Therefore, it is excellent in that it is a heat shrinking process in which sagging on the tape after the expanding process is removed by heat shrinkage, and the tape is tensed and each chip interval is stably maintained. Among the crosslinking resins, thermoplastic crosslinking resins are more preferably used. On the other hand, the non-crosslinked resin has a smaller restoring force against the tensile force than the crosslinked resin. Therefore, after the expansion process in the low temperature region such as -15 DEG C to 0 DEG C, the tape is relaxed once and returned to the normal temperature, and the tape does not shrink well when it is headed to the pickup process and the mounting process. It is excellent in that it can prevent contact. Of the non-crosslinkable resins, olefinic uncrosslinked resins are more preferably used.

As such thermoplastic crosslinking resins, there can be used, for example, a ternary copolymer comprising a main polymer component of an ethylene- (meth) acrylic acid terpolymer or an ethylene- (meth) acrylic acid- (meth) An ionomer resin is exemplified. These are particularly preferable because they are suitable for the expansion process in terms of uniform expandability and strongly restitution force acts upon heating by crosslinking. The metal ion contained in the ionomer resin is not particularly limited, and examples thereof include zinc and sodium. However, zinc ions are preferable because of low solubility and low staining property. In the (meth) acrylic acid alkyl ester of the terpolymer, the alkyl group having 1 to 4 carbon atoms is preferable because it has a high elastic modulus and can transmit a strong force to the wafer. Examples of such (meth) acrylic acid alkyl esters include methyl methacrylate, ethyl methacrylate, propyl methacrylate, butyl methacrylate, methyl acrylate, ethyl acrylate, propyl acrylate, and butyl acrylate.

As the above-mentioned thermoplastic crosslinking resin, besides the ionomer resin, a resin selected from low-density polyethylene having a specific gravity of 0.910 or more and less than 0.930 or an ultra-low-density polyethylene having a specific gravity of less than 0.910 and other resins selected from ethylene- It is also preferable to irradiate and cross-link the energy ray. Such a thermoplastic crosslinked resin has a uniform uniform expansion property in that a crosslinked site and a non-crosslinked site coexist in the resin. In addition, it is suitable for eliminating the sagging of the tape generated in the expansion process because the strong restoring force acts upon heating. Since the chlorine is hardly contained in the constitution of the molecular chain, even if the unnecessary tape is incinerated after use, Since it does not generate chlorinated aromatic hydrocarbons that are flexible, the environmental load is also small. A resin having sufficient uniform expandability can be obtained by suitably preparing an amount of energy ray to be irradiated on the polyethylene or the ethylene-vinyl acetate copolymer.

As the uncrosslinked resin, for example, a mixed resin composition of a polypropylene and a styrene-butadiene copolymer is exemplified.

As the polypropylene, for example, propylene homopolymer, block type or random propylene-ethylene copolymer can be used. The random propylene-ethylene copolymer is preferable because the rigidity is small. When the content of the ethylene constituent unit in the propylene-ethylene copolymer is 0.1% by weight or more, the rigidity of the tape and the compatibility of the resins in the mixed resin composition are excellent. If the rigidity of the tape is appropriate, the cutability of the wafer is improved, and when the compatibility of the resins is high, the ejection amount tends to be stabilized by pushing out. More preferably at least 1% by weight. Further, when the content of the ethylene constituent unit in the propylene-ethylene copolymer is 7% by weight or less, the polypropylene is excellent in that it is stable and is easily polymerized. More preferably 5% by weight or less.

As the styrene-butadiene copolymer, hydrogenated one may be used. When hydrogen is added to the styrene-butadiene copolymer, compatibility with propylene is good and embrittlement and discoloration due to oxidation deterioration due to double bonds in butadiene can be prevented. When the content of the styrene constituent unit in the styrene-butadiene copolymer is 5% by weight or more, the styrene-butadiene copolymer is preferable because it is stable and easily polymerized. When it is 40% by weight or less, it is excellent in flexibility and expandability. More preferably 25% by weight or less, and further preferably 15% by weight or less. As the styrene-butadiene copolymer, a block copolymer or a random copolymer can be used. The random copolymer is preferable in that the styrene phase can be uniformly dispersed and the rigidity can be prevented from becoming too large, and the expandability can be improved.

When the content of polypropylene in the mixed resin composition is 30% by weight or more, unevenness in thickness of the base film can be suppressed. If the thickness is uniform, the expandability tends to become isotropic and the stress relaxation property of the base film becomes too large so that the inter-chip distance becomes small with time, and it is easy to prevent the adhesive layers from coming into contact with each other and re-fused. More preferably 50% by weight or more. If the content of polypropylene is 90% by weight or less, the rigidity of the base film can be appropriately adjusted. If the rigidity of the base film becomes too large, the force necessary for expanding the base film becomes large, so that the load of the apparatus becomes large, and the wafer or the adhesive layer 13 may not be able to be sufficiently expanded. It is important. The lower limit of the styrene-butadiene copolymer content in the mixed resin composition is preferably 10% by weight or more, and it is easy to adjust the styrene-butadiene copolymer content by the stiffness of the base film suitable for the apparatus. When the upper limit is 70% by weight or less, the thickness irregularity can be suppressed, and it is more preferable that the upper limit is 50% by weight or less.

In the example shown in Fig. 1, the base film 11 is a single layer, but the base film 11 is not limited thereto, and may be a multiple layer structure in which two or more kinds of resins are laminated, or one kind of resin may be laminated in two or more layers. Two or more kinds of resins, whether crosslinked or non-crosslinked, are preferable from the standpoint of enhancing and manifesting their respective properties, and when laminated by combining crosslinking property and non-crosslinking property, they are preferable in that respective defects are complemented . Though the thickness of the base film 11 is not particularly specified, it is sufficient that the thickness of the base film 11 is easily increased in the expansion process of the semiconductor processing tape 10, and sufficient enough not to break. For example, it is preferably about 50 to 300 mu m, more preferably 70 mu m to 200 mu m. Further, it is preferable that the base film 11 includes a crystalline resin.

As a method for producing the base film 11 of a plurality of layers, conventionally known extrusion methods, lamination methods, and the like can be used. In the case of using the lamination method, an adhesive may be interposed between the layers. As the adhesive, conventionally known adhesives can be used.

<Pressure-sensitive adhesive layer>

The pressure-sensitive adhesive layer (12) can be formed by coating a pressure-sensitive adhesive composition on the base film (11).

The pressure-sensitive adhesive layer 12 constituting the tape 10 for semiconductor processing of the present invention is excellent in durability such that it does not cause peeling with the adhesive layer 13 at the time of dicing, Or the adhesive layer 13 at the time of pick-up.

In the tape 10 for semiconductor processing of the present invention, the composition of the pressure-sensitive adhesive composition constituting the pressure-sensitive adhesive layer 12 is not particularly limited, but in order to improve the pick-up property after dicing, It is preferable that it is a material that facilitates peeling off from the adhesive layer 13. In one embodiment, the pressure-sensitive adhesive composition contains an energy ray-curable carbon-carbon double bond having 60 mol% or more of (meth) acrylate having an alkyl chain of 6 to 12 carbon atoms as a base resin and an iodine value of 5 to 30 Containing polymer (A). Here, the energy ray refers to an ionizing radiation such as ultraviolet rays or an electron beam.

In this polymer (A), when the introduction amount of the energy ray-curable carbon-carbon double bond is 5 or more in iodine value, the effect of reducing the adhesive force after irradiation with energy rays is excellent. More preferably 10 or more. When the iodine value is 30 or less, the holding power of the chip up to the time of being picked up after the energy ray irradiation is high, and it is excellent in that it is easy to widen the interval of chips at the time immediately before the pickup process. If the chip interval can be sufficiently widened before the pick-up process, image recognition of each chip at the time of pick-up is easy or it is easy to pick up. When the introduction amount of the carbon-carbon double bond is 5 or more and 30 or less in terms of iodine value, the polymer (A) itself is preferable because of its stability and easiness of production.

When the glass transition temperature is -70 占 폚 or higher, the polymer (A) is excellent in heat resistance against heat accompanying the irradiation of the energy ray, and more preferably -66 占 폚 or higher. When the temperature is 15 deg. C or less, the surface state of the wafer is excellent in the scattering prevention effect of the chip after dicing in the wafer, more preferably at most 0 deg. C, further preferably at most 28 deg.

The polymer (A) may be prepared as described above. For example, the polymer (A) may be obtained by mixing an acrylic copolymer with a compound having an energy ray-curable carbon-carbon double bond, or an acrylic copolymer having a functional group or methacryl (A2) having an energy ray-curable carbon-carbon double bond and a functional group capable of reacting with the functional group is used.

Among them, as the methacrylic copolymer (A1) having the functional group, a monomer (A1-1) having a carbon-carbon double bond such as an alkyl acrylate or methacrylate alkyl ester and a monomer having a carbon- , And a monomer (A1-2) having a functional group. As the monomer (A1-1), hexyl acrylate having an alkyl chain of 6 to 12 carbon atoms, n-octyl acrylate, isooctyl acrylate, 2-ethylhexyl acrylate, dodecyl acrylate, decyl acrylate, N-butyl acrylate, isobutyl acrylate, ethyl acrylate, methyl acrylate, and methacrylates such as pentyl acrylate, n-butyl acrylate, isobutyl acrylate, ethyl acrylate, methyl acrylate and the like which are monomers having an alkyl chain of 5 or less.

The component having the alkyl chain of 6 or more in the monomer (A1-1) is excellent in terms of the pick-up property since the peeling force between the pressure-sensitive adhesive layer and the adhesive layer can be made small. Further, the component of 12 or less has a low modulus of elasticity at room temperature and is superior in terms of interfacial adhesion between the pressure-sensitive adhesive layer and the adhesive layer. If the adhesive strength between the adhesive layer and the adhesive layer is high, it is preferable that the interface torsion between the pressure-sensitive adhesive layer and the adhesive layer can be suppressed when the tape is extended to cut the wafer, thereby improving the cutability.

The use of a monomer having a large number of alkyl chains in the alkyl chain as the monomer (A1-1) lowers the glass transition temperature, so that a pressure sensitive adhesive composition having a desired glass transition temperature can be prepared by appropriately selecting it. In addition to the glass transition temperature, a low molecular weight compound having a carbon-carbon double bond such as vinyl acetate, styrene, or acrylonitrile may be added for the purpose of enhancing various performances such as compatibility. In this case, these low-molecular compounds are blended within a range of 5% by mass or less of the total mass of the monomer (A1-1).

Examples of the functional group of the monomer (A1-2) include a carboxyl group, a hydroxyl group, an amino group, a cyclic acid anhydride group, an epoxy group and an isocyanate group. Specific examples of the monomer (A1-2) include acrylic acid, methacrylic acid, 2-hydroxyalkyl acrylates, 2-hydroxyalkyl methacrylates, glycol monoacrylates, glycol monomethacrylates, N-methylol acrylamide, N-methyl Alkyl methacrylates, N-alkylaminoethyl methacrylates, acrylamides, methacrylamides, maleic anhydride, itaconic anhydride, fumaric anhydride, phthalic anhydride, Glycidyl acrylate, glycidyl methacrylate, aryl glycidyl ether, and the like.

Examples of the functional group used in the compound (A2) include a hydroxyl group, an epoxy group and an isocyanate group when the functional group possessed by the compound (A1) is a carboxyl group or a cyclic acid anhydride group, and in the case of a hydroxyl group, An epoxy group, an isocyanate group and the like. Examples of the epoxy group include a carboxyl group, a cyclic acid anhydride group and an amino group, and specific examples thereof include monomers (A1- 2) can be listed as concrete examples. Further, as the compound (A2), a part of the isocyanate group of the polyisocyanate compound may be urethane-modified with a monomer having a hydroxyl group or a carboxyl group and an energy ray-curable carbon-carbon double bond.

In addition, in the reaction of the compound (A1) and the compound (A2), desired functional groups such as an acid value or a hydroxyl group can be produced by leaving unreacted functional groups. If the OH group is left so that the hydroxyl value of the polymer (A) is 5 to 100, the risk of pick-up mistakes can be further reduced by reducing the adhesive force after irradiation of the energy ray.

Further, it is preferable to leave the COOH group such that the acid value of the polymer (A) is 0.5 to 30, since the improvement effect after the restoration of the pressure-sensitive adhesive layer after expanding the tape for semiconductor processing of the present invention can be obtained. When the hydroxyl value of the polymer (A) is 5 or more, it is excellent in terms of the adhesive strength reduction effect after irradiation of the energy ray. When it is 100 or less, it is excellent in the fluidity of the pressure sensitive adhesive after irradiation of the energy ray. When the acid value is 0.5 or more, it is excellent in terms of the tape stability. When the acid value is 30 or less, the pressure-sensitive adhesive is excellent in fluidity.

In the synthesis of the polymer (A), ketones, esters, alcohols and aromatics may be used as the organic solvent in the case of carrying out the reaction by solution polymerization. Among them, toluene, ethyl acetate, isopropyl A solvent having a boiling point of 60 to 120 캜 is preferably used as a good solvent for an acryl-based polymer such as alcohol, benzene methyl cellosolve, ethyl cellosolve, acetone and methyl ethyl ketone. As the polymerization initiator, α, An azobis-based compound such as bis-isobutylnitrile, and an organic peroxide-based compound such as benzoyl peroxide. At this time, a catalyst and a polymerization inhibitor can be used in combination as needed, and the polymer (A) having a desired molecular weight can be obtained by controlling the polymerization temperature and the polymerization time. With respect to controlling the molecular weight, it is preferable to use a known solvent such as mercaptan, carbon tetrachloride, or a chain transfer agent. Further, this reaction is not limited to solution polymerization, and other methods such as bulk polymerization and suspension polymerization may be used.

Although the polymer (A) can be obtained in the manner as described above, the molecular weight of the polymer (A) in the present invention is preferably 300,000 or more, because the cohesive force can be increased. When the cohesive force is high, there is an effect of suppressing the deviation from the interface with the adhesive layer at the time of expansion, and the tensile force is easily transmitted to the adhesive layer, so that the separability of the adhesive layer is improved. When the molecular weight of the polymer (A) is 2,000,000 or less, it is excellent in the point of inhibiting gelation during synthesis and coating. The molecular weight in the present invention is the mass average molecular weight in terms of polystyrene.

In the semiconductor processing tape 10 of the present invention, the resin composition constituting the pressure-sensitive adhesive layer 12 may further contain a compound (B) which acts as a crosslinking agent in addition to the polymer (A). Examples thereof include polyisocyanates, melamine formaldehyde resins, and epoxy resins, which may be used alone or in combination of two or more. The compound (B) reacts with the polymer (A) or the base film, and the resultant crosslinked structure can improve the cohesive force of the pressure sensitive adhesive comprising the polymers (A) and (B) as a main component after coating the pressure sensitive adhesive composition have.

Examples of the polyisocyanates include, but are not limited to, 4,4'-diphenylmethane diisocyanate, tolylene diisocyanate, xylene diisocyanate, 4,4'-diphenyl ether diisocyanate, Aromatic isocyanates such as [2,2-bis (4-phenoxyphenyl) propane] diisocyanate, hexamethylene diisocyanate, 2,2,4-trimethylhexamethylene diisocyanate, isophorone diisocyanate, Diisobutyl methane diisocyanate, lysine diisocyanate, and lysine triisocyanate. Specific examples thereof include Coronate L (trade name, manufactured by Japan Polyurethane Co., Ltd.) and the like . Specific examples of the melamine formaldehyde resin include NIKARAK MX-45 (trade name, manufactured by Sanwa Chemical Co., Ltd.), and melan (trade name, manufactured by Hitachi Kasei Kogyo Co., Ltd.). As the epoxy resin, TETRAD-X (trade name, manufactured by Mitsubishi Chemical Corporation) can be used. In the present invention, it is particularly preferable to use a polyisocyanate.

The pressure-sensitive adhesive layer in which the amount of the compound (B) added is 0.1 part by mass or more based on 100 parts by mass of the polymer (A) is excellent in terms of cohesion. More preferably at least 0.5 part by mass. Further, the pressure-sensitive adhesive layer of 15 parts by mass or less is excellent in suppressing rapid gelation at the time of coating, and workability such as compounding and application of the pressure-sensitive adhesive is improved. More preferably 5 parts by mass or less.

Further, in the present invention, the pressure-sensitive adhesive layer 12 may contain a photopolymerization initiator (C). The photopolymerization initiator (C) contained in the pressure-sensitive adhesive layer (12) is not particularly limited and conventionally known ones can be used. Examples thereof include benzophenones such as benzophenone, 4,4'-dimethylaminobenzophenone, 4,4'-diethylaminobenzophenone and 4,4'-dichlorobenzophenone, acetophenone, diethoxyacetophenone and the like , Anthraquinones such as acetophenone, 2-ethyl anthraquinone and t-butyl anthraquinone, 2-chlorothioxanthone, benzoin ethyl ether, benzoin isopropyl ether, benzyl, 2,4,5-triaryl An imidazole dimer (lopin dimer), an acridine compound, and the like. These may be used alone or in combination of two or more. The amount of the photopolymerization initiator (C) to be added is preferably 0.1 part by mass or more, more preferably 0.5 part by mass or more, per 100 parts by mass of the polymer (A). The upper limit thereof is preferably 10 parts by mass or less, more preferably 5 parts by mass or less.

In addition, the energy ray-curable pressure-sensitive adhesive for use in the present invention may optionally contain a tackifier, a tackifier, a surfactant, or other modifier. The inorganic compound filler may be appropriately added.

The pressure-sensitive adhesive layer 12 can be formed by a conventional method of forming a pressure-sensitive adhesive layer. For example, the pressure-sensitive adhesive composition may be applied to a predetermined surface of the base film 11 to form the pressure-sensitive adhesive composition, or the pressure-sensitive adhesive composition may be coated on a separator (e.g., a plastic film or sheet coated with a releasing agent) The pressure-sensitive adhesive layer 12 can be formed on the base film 11 by a method in which the pressure-sensitive adhesive layer 12 is formed and then the pressure-sensitive adhesive layer 12 is transferred to a predetermined surface of the base material . Further, the pressure-sensitive adhesive layer 12 may have a single layer form or a laminated form.

The thickness of the pressure-sensitive adhesive layer 12 is not particularly limited, but if the thickness is 2 m or more, the pressure-sensitive adhesive layer 12 is excellent, and more preferably 5 m or more. If the thickness is 15 μm or less, the pickup property is excellent, and 10 μm or less is more preferable.

<Adhesive Layer>

In the tape 10 for semiconductor processing of the present invention, the adhesive layer 13 is peeled off from the pressure-sensitive adhesive layer 12 and adhered to the chip when the wafer is bonded and diced, and then the chip is picked up. It is used as an adhesive for fixing the chip to a substrate or a lead frame.

The adhesive layer 13 is not particularly limited, but may be a film-like adhesive generally used for a wafer, and examples thereof include a thermoplastic resin and a thermosetting component. The thermoplastic resin used for the adhesive layer 13 of the present invention is preferably a thermoplastic resin or a resin which has thermoplasticity in an uncured state and forms a crosslinked structure after heating and is not particularly limited, , A thermoplastic resin having a weight average molecular weight of 5,000 to 200,000 and a glass transition temperature of 0 to 150 占 폚. As another example, thermoplastic resins having a weight average molecular weight of 100,000 to 1,000,000 and a glass transition temperature of -50 to 20 占 폚 may be mentioned.

Examples of the former thermoplastic resin include polyimide resin, polyamide resin, polyetherimide resin, polyamideimide resin, polyester resin, polyester imide resin, phenoxy resin, polysulfone resin, polyether sulfone resin, Polyphenylene sulfide resin, polyether ketone resin and the like. Of these, polyimide resin and phenoxy resin are preferably used, and as the latter thermoplastic resin, it is preferable to use a polymer containing a functional group.

The polyimide resin can be obtained by subjecting a tetracarboxylic dianhydride and a diamine to a condensation reaction by a known method. That is, the tetracarboxylic dianhydride and the diamine are equimolarly or nearly equimolarly used in the organic solvent (the order of addition of each component is optional), and the addition reaction is carried out at a reaction temperature of 80 ° C or less, preferably 0 to 60 ° C. As the reaction progresses, the viscosity of the reaction solution gradually increases and polyamic acid, which is a precursor of polyimide, is produced. The molecular weight of the polyamic acid can be adjusted by heating at a temperature of 50 to 80 DEG C to depolymerize. The polyimide resin can be obtained by subjecting the reactant (polyamic acid) to dehydration ring closure. The dehydration ring closure can be carried out by a thermal closure method for heat treatment and a chemical closure method using a dehydrating agent.

The tetracarboxylic dianhydride used as a raw material of the polyimide resin is not particularly limited and includes, for example, 1,2- (ethylene) bis (trimellitate anhydride), 1,3- (trimethylene) bis (Tetramethylene anhydride), 1,5- (pentamethylene) bis (trimellitate anhydride), 1,6- (hexamethylene) bis (trimellitate anhydride) ), 1,7- (heptamethylene) bis (trimellitate anhydride), 1,8- (octamethylene) bis (trimellitate anhydride) (Dimetamethylene) bis (trimellitate anhydride), 1,12- (dodecamethylene) bis (trimellitate anhydride), 1,16- (hexadecamethylene) bis (Trimellitate anhydride), pyromellitic dianhydride, 3,3 ', 4,4'-biphenyltetracarboxylic dianhydride, 2,2', 3,3 (Biphenyltetracarboxylic dianhydride, 2,2-bis (3,4-dicarboxyphenyl) propane dianhydride, 2,2-bis (2,3-dicarboxyphenyl) ethane dianhydride, 1,1-bis (3,4-dicarboxyphenyl) ethane dianhydride, bis (2,3-dicarboxyphenyl) methane dianhydride, bis -Dicarboxyphenyl) methane dianhydride, bis (3,4-dicarboxyphenyl) sulfone dianhydride, 3,4,9,10-perylene tetracarboxylic dianhydride, bis (3,4-dicarboxyphenyl) ether Dianhydride, benzene-1,2,3,4-tetracarboxylic dianhydride, 3,4,3 ', 4'-benzophenonetetracarboxylic dianhydride, 2,3,2', 3'-benzophenonetetra Carboxylic acid dianhydride, 3,3,3 ', 4'-benzophenonetetracarboxylic dianhydride, 1,2,5,6-naphthalenetetracarboxylic dianhydride, 1,4,5,8-naphthalenetetracarboxylic acid Dianhydride, 2,3,6,7-naphthalenetetracarboxylic dianhydride, 1,2,4,5-naphthalenetetracar Dianhydrides, 2,6-dichloronaphthalene-1,4,5,8-tetracarboxylic dianhydride, 2,7-dichloronaphthalene-1,4,5,8-tetracarboxylic dianhydride, 2,3, 6,7-tetrachloronaphthalene-1,4,5,8-tetracarboxylic dianhydride, phenanthrene-1,8,9,10-tetracarboxylic dianhydride, pyrazine-2,3,5,6-tetra Carboxylic acid dianhydride, thiophene-2,3,5,6-tetracarboxylic dianhydride, 2,3,3 ', 4'-biphenyltetracarboxylic dianhydride, 3,4,3', 4'- Biphenyltetracarboxylic dianhydride, 2,3,2 ', 3'-biphenyltetracarboxylic dianhydride, bis (3,4-dicarboxyphenyl) dimethylsilane dianhydride, bis (3,4-dicarboxyphenyl) Bis (3,4-dicarboxyphenyldimethylsilyl) benzene dianhydride, 1,3-bis (3,4-dicarboxyphenyldimethylsilyl) benzene dianhydride, 4-dicarboxyphenyl) -1,1,3,3-tetramethyldicyclohexane dianhydride, p-phenylenebis (trimellitate anhydride) , Ethylene tetracarboxylic dianhydride, 1,2,3,4-butanetetracarboxylic dianhydride, decahydronaphthalene-1,4,5,8-tetracarboxylic dianhydride, 4,8-dimethyl-1,2 , 3,5,6,7-hexahydronaphthalene-1,2,5,6-tetracarboxylic dianhydride, cyclopentane-1,2,3,4-tetracarboxylic dianhydride, pyrrolidine- 3,4,5-tetracarboxylic dianhydride, 1,2,3,4-cyclobutane tetracarboxylic dianhydride, bis (exo-bicyclo [2,2,1] heptane-2,3-dicarboxylic acid Dianhydride, bicyclo [2,2,2] -octo-7-ene-2,3,5,6-tetracarboxylic dianhydride, 2,2-bis (3,4-dicarboxyphenyl) hexafluor Propane dianhydride, 2,2-bis [4- (3,4-dicarboxyphenyl) phenyl] hexafluoropropane dianhydride, 4,4'-bis (3,4-dicarboxyphenoxy) diphenylsulfide dianhydride Water, 1,4-bis (2-hydroxyhexafluoroisopropyl) benzene bis (trimellitic anhydride), 1,3-bis (2- (2,5-dioxotetrahydrofuryl) -3-methyl-3-cyclohexene-1,2-dicarboxylic dianhydride, tetrahydrofuran -2,3,4,5-tetracarboxylic dianhydride, and the like, and one or more of these may be used in combination.

The diamine used as the raw material of the polyimide is not particularly limited and examples thereof include o-phenylenediamine, m-phenylenediamine, p-phenylenediamine, 3,3'-diaminodiphenyl ether, 3 , 4'-diaminodiphenyl ether, 4,4'-diaminodiphenyl ether, 3,3'-diaminodiphenylmethane, 3,4'-diaminodiphenylmethane, 4,4'-diamino Bis (4-amino-3,5-diisopropylphenyl) methane, 3,3'-diaminodiphenyldifluoromethane, 3 , 4'-diaminodiphenyldifluoromethane, 4,4'-diaminodiphenyldifluoromethane, 3,3'-diaminodiphenylsulfone, 3,4'-diaminodiphenylsulfone, 4,4'-diaminodiphenyldifluoromethane, '-Diaminodiphenylsulfone, 3,3'-diaminodiphenylsulfide, 3,4'-diaminodiphenylsulfide, 4,4'-diaminodiphenylsulfide, 3,3'-dia Aminodiphenyl ketone, 3,4'-diaminodiphenyl ketone, 4,4'-diaminodiphenyl ketone, 2,2- Bis (3-aminophenyl) propane, 2,2 '- (3,4'-diaminodiphenyl) propane, 2,2- ), Hexafluoropropane, 2,2- (3,4'-diaminodiphenyl) hexafluoropropane, 2,2-bis (4-aminophenyl) hexafluoropropane, 1,3- ) Benzene, 1,4-bis (3-aminophenoxy) benzene, 1,4-bis (4-aminophenoxy) benzene, (1,4-phenylenebis (1-methylethylidene)) bisaniline, 4,4 '- (1,4-phenylenebis Bis (4- (3-aminophenoxy) phenyl) propane, 2,2-bis (4- Hexafluoropropane, bis (4- (3-aminophenoxy) phenyl) hexafluoropropane, 2,2-bis Feed, bis (4- (4-aminophenoxy) phenyl) sulfide, bis (4- (3-aminophenoxy) Phenyl) sulfone, bis (4- (4-aminophenoxy) phenyl) sulfone, 3,5-diaminobenzoic acid and like aromatic diamines, 1,2-diaminoethane, Diaminobutane, 1,5-diaminopentane, 1,6-diaminohexane, 1,7-diaminoheptane, 1,8-diaminooctane, 1,9- diaminononane, 1,10- Diaminododecane, 1,11-diamino undecane, 1,12-diaminododecane, 1,2-diaminocyclohexane, diaminopolysiloxanes represented by the following general formula (1), 1,3-bis Methyl) cyclohexane, polyphenylene ether diamines such as Jeffamine D-230, D-400, D-2000, D-4000, ED-600, ED-900, ED-2001 and EDR-148 manufactured by San Techno Chemical Co. And the like, and they may be used alone or in combination of two or more. The glass transition temperature of the polyimide resin is preferably 0 to 200 占 폚, and the weight average molecular weight is preferably 10,000 to 200,000.

In general formula (1)

[Chemical Formula 1]

(Wherein R ₁ and R ₂ are each a monovalent hydrocarbon group having 1 to 30 carbon atoms, which may be the same or different, and R ₃ and R ₄ each represent a monovalent hydrocarbon group and may be the same or different, and m Is an integer of 1 or more)

The phenoxy resin, which is one of the preferable thermoplastic resins, is preferably a resin obtained by reacting various bisphenol with epichlorohydrin, or by a method of reacting a liquid epoxy resin with bisphenol. As the bisphenol, bisphenol A, bisphenol AF , Bisphenol AD, bisphenol F, and bisphenol S. Phenoxy resins are similar in structure to epoxy resins and therefore have good compatibility with epoxy resins and are suitable for imparting good adhesion to an adhesive film.

Examples of the phenoxy resin used in the present invention include resins having a repeating unit represented by the following general formula (2).

In general formula (2)

(2)

In the general formula (2), X represents a single bond or a divalent linking group. Examples of the divalent linking group include an alkylene group, a phenylene group, -O-, -S-, -SO- or -SO ₂ -. Here, the alkylene group is preferably an alkylene group having 1 to 10 carbon atoms, and more preferably -C (R ₅ ) (R ₆ ) -. R ₅ and R _{6 each} represent a hydrogen atom or an alkyl group, and the alkyl group is preferably a linear or branched alkyl group having 1 to 8 carbon atoms, and examples thereof include methyl, ethyl, n-propyl, isopropyl, Hexyl, and 1,3,3-trimethylbutyl. The alkyl group may be substituted with a halogen atom, and for example, a trifluoromethyl group can be mentioned. X is preferably an alkylene group, -O-, -S-, a fluorene group or -SO ₂ -, more preferably an alkylene group or -SO ₂ -. Of _{these, -C (CH 3) 2 -} , -CH (CH 3) -, -CH 2 -, -SO 2 - are _{preferred, -C (CH 3) 2 -} , -CH (CH 3) -, -CH ₂ - is more preferable, and -C (CH ₃ ) ₂ - is particularly preferable.

The phenoxy resin represented by the general formula (2) may have a repeating unit, and X in the general formula (2) may be a resin having a plurality of other repeating units. In the present invention, a resin in which X is composed only of the same repeating unit is preferable.

Incorporation of a polar substituent group such as a hydroxyl group or a carboxyl group in the phenoxy resin represented by the general formula (2) improves compatibility with the thermosetting component and can impart uniform appearance and properties.

When the weight average molecular weight of the phenoxy resin is 5000 or more, the film-forming property is excellent. More preferably 10,000 or more, and even more preferably 30,000 or more.

When the mass average molecular weight is 150,000 or less, it is preferable from the viewpoint of fluidity at the time of hot pressing and compatibility with other resins. More preferably 100,000 or less. Further, when the glass transition temperature is -50 占 폚 or higher, the film formability is excellent, more preferably 0 占 폚 or higher, and still more preferably 50 占 폚 or higher. When the glass transition temperature is 150 占 폚, the adhesive strength of the adhesive layer 13 at the time of die bonding is excellent, more preferably 120 占 폚 or less, further preferably 110 占 폚 or less.

Examples of the functional group in the polymer containing the functional group include a glycidyl group, an acryloyl group, a methacryloyl group, a hydroxyl group, a carboxyl group, an isocyanurate group, an amino group and an amide group. Among them, a glycidyl group is preferred.

Examples of the high molecular weight component containing the functional group include a (meth) acrylic copolymer containing a functional group such as a glycidyl group, a hydroxyl group and a carboxyl group.

As the (meth) acrylic copolymer, for example, a (meth) acrylic ester copolymer, an acrylic rubber and the like can be used, and an acrylic rubber is preferable. The acrylic rubber is a rubber mainly composed of an acrylate ester and mainly composed of a copolymer such as butyl acrylate and acrylonitrile, or a copolymer such as ethyl acrylate and acrylonitrile.

When the glycidyl group is contained as the functional group, the amount of the glycidyl group-containing repeating unit is preferably 0.5 to 6.0% by weight, more preferably 0.5 to 5.0% by weight, and particularly preferably 0.8 to 5.0% by weight. The glycidyl group-containing repeating unit refers to a constituent monomer of a (meth) acrylic copolymer containing a glycidyl group, and specifically, it is glycidyl acrylate or glycidyl methacrylate. When the amount of the glycidyl group-containing repeating unit is within this range, it is possible to secure an adhesive force and to prevent gelation.

(Meth) acrylate, butyl (meth) acrylate, and the like can be given as examples of the constituent monomers of the (meth) acrylic copolymer other than glycidyl acrylate and glycidyl methacrylate. May be used alone or in combination of two or more. In the present invention, ethyl (meth) acrylate refers to ethyl acrylate and / or ethyl methacrylate. When the functional monomer is used in combination, the mixing ratio may be determined in consideration of the glass transition temperature of the (meth) acrylic copolymer. When the glass transition temperature is -50 캜 or higher, excellent film formability is obtained, and excessive adhesion at room temperature can be suppressed. If the adhesive force at room temperature is excessive, handling of the adhesive layer becomes difficult. More preferably -20 占 폚 or higher, and still more preferably 0 占 폚 or higher. When the glass transition temperature is 30 占 폚 or less, the adhesive strength of the adhesive layer during die bonding is excellent, more preferably 20 占 폚 or less.

When the monomer is polymerized to produce a high molecular weight component containing a functional monomer, the polymerization method is not particularly limited. For example, pear polymerization or solution polymerization can be used. Among them, pearl polymerization .

In the present invention, when the weight average molecular weight of the high molecular weight component containing the functional monomer is 100,000 or more, the film formability is excellent, more preferably 200,000 or more, and still more preferably 500,000 or more. When the weight average molecular weight is adjusted to 2,000,000 or less, the heat fluidity of the adhesive layer during die bonding is improved. When the heat fluidity of the adhesive layer at the time of die bonding is improved, adhesion between the adhesive layer and the adherend is improved, and the adhesive strength can be improved. Further, the unevenness of the adherend is imposed on the adhesive layer. More preferably 1,000,000 or less, more preferably 800,000 or less, and when it is 500,000 or less, a greater effect can be obtained.

The thermally polymerizable component is not particularly limited as long as it can be polymerized by heat. Examples of the thermally polymerizable component include a glycidyl group, an acryloyl group, a methacryloyl group, a hydroxyl group, a carboxyl group, an isocyanurate group, A compound having a functional group and a trigger material. These may be used singly or in combination of two or more. In view of heat resistance as an adhesive layer, a thermosetting resin which hardens by heat and causes an adhesive action is used as a curing agent, It is preferably contained together. Examples of the thermosetting resin include an epoxy resin, an acrylic resin, a silicone resin, a phenol resin, a thermosetting polyimide resin, a polyurethane resin, a melamine resin and a urea resin. It is most preferable to use an epoxy resin in order to obtain this excellent adhesive layer.

The above-mentioned epoxy resin is not particularly limited as long as it hardens and adheres, and includes bifunctional epoxy resins such as bisphenol A type epoxy, novolak type epoxy resins such as phenol novolak type epoxy resin and cresol novolak type epoxy resin Can be used. Further, generally known ones such as polyfunctional epoxy resins, glycidylamine type epoxy resins, heterocyclic ring-containing epoxy resins and alicyclic epoxy resins can be applied.

Examples of the bisphenol A type epoxy resin include Epikote series (Epikote 807, Epikote 815, Epikote 825, Epikote 827, Epikote 828, Epikote 834, Epikote 1001, Epikote 1004, DER-330, DER-301 and DER-361 manufactured by Dow Chemical Co., Ltd., YD8125 and YDF8170 manufactured by Shinnitetsu Sumikin Chemical Co., Ltd., and the like. Examples of the phenol novolac epoxy resin include Epikote 152, Epikote 154, EPPN-201 manufactured by Mitsubishi Chemical Corporation, DEN-438 manufactured by Dow Chemical Co., Ltd., and the like, As the epoxy resin, EOCN-102S, EOCN-103S, EOCN-104S, EOCN-1012, EOCN-1025 and EOCN-1027 manufactured by Nippon Yakushi Kasei Co., Ltd., YDCN701, YDCN702, YDCN703, YDCN704 . Epon 1031S manufactured by Mitsubishi Chemical Corporation, Aralite 0163 manufactured by Chiba Specialty Chemicals, Denacol EX-611, EX-614, EX-614B, EX-622, EX-512, EX-521, EX-421, EX-411 and EX-321. Examples of the amine type epoxy resin include Epikote 604 manufactured by Mitsubishi Chemical Corporation, YH-434 manufactured by Tohto Kasei Co., Ltd., TETRAD-X and TETRAD-C manufactured by Mitsubishi Gas Chemical Co., Ltd., ELM-120 manufactured by Sumitomo Chemical Industry Co., .

Examples of the heterocyclic ring-containing epoxy resin include Araldite PT810 manufactured by Ciba Specialty Chemicals, ERL4234, ERL4299, ERL4221, and ERL4206 manufactured by UCC. These epoxy resins may be used alone or in combination of two or more.

In order to cure the thermosetting resin, an appropriate additive may be added. As such an additive, for example, a curing agent, a curing accelerator, a catalyst and the like can be mentioned, and when a catalyst is added, a cocatalyst can be used if necessary.

When an epoxy resin is used for the thermosetting resin, it is preferable to use an epoxy resin curing agent or a curing accelerator, and it is more preferable to use them together. Examples of the curing agent include phenol resins, dicyandiamide, boron trifluoride complex compounds, organic hydrazide compounds, amines, polyamide resins, imidazole compounds, urea or thiourea compounds, polymercaptan compounds, mercapto compounds , An acid anhydride, and a photo-curable UV-curing agent. These may be used alone or in combination of two or more.

Among them, examples of the boron trifluoride complex include boron trifluoride-amine complexes with various amine compounds (preferably primary amine compounds), and examples of the organic hydrazide compound include isophthalic acid dihydrazide have.

Examples of the phenol resin include novolak type phenol resins such as phenol novolak resin, phenol aralkyl resin, cresol novolak resin, tert-butylphenol novolac resin and nonylphenol novolac resin, resol type phenol resin, poly And polyoxystyrenes such as paraoxystyrene. Among them, phenolic compounds having at least two phenolic hydroxyl groups in the molecule are preferable.

Examples of the phenolic compound having at least two phenolic hydroxyl groups in the molecule include phenol novolac resins, cresol novolac resins, t-butylphenol novolac resins, dicyclopentazenecresol novolak resins, dicyclopentane Dienepol novolak resin, xylene-modified phenol novolac resin, naphthol novolac resin, trisphenol novolac resin, tetrakisphenol novolac resin, bisphenol A novolac resin, poly-p-vinylphenol resin, phenol aralkyl resin . Of these phenolic resins, phenol novolak resin and phenol aralkyl resin are particularly preferable, and connection reliability can be improved.

Examples of the amines include chain type aliphatic amines such as diethylenetriamine, triethylenetetramine, hexamethylenediamine, N, N-dimethylpropylamine, benzyldimethylamine, 2- (dimethylamino) phenol, 2,4,6-tris Bis (4-aminocyclohexyl) methane, bis (4-aminocyclohexyl) methane, menthylenediamine and the like), cyclic aliphatic amines (N-aminoethylpiperazine, (Piperazine, N, N-dimethylpiperazine, triethylenediamine, melamine, guanamine, etc.), aromatic amines (such as methylenebis Diaminodiphenylmethane, diamino, 4,4'-diaminodiphenylsulfone, etc.), polyamide resins (preferably polyamide amines, condensates of dimer acid and polyamine), and polyamide resins (2-phenyl-4,5-dihydroxymethylimidazole, 2-methylimidazole, 2,4-dimethyl 2-n-heptadecylimidazole, 1-cyanoethyl-2-undecylimidazolium trimellitate, epoxy imidazole adduct, etc.), urea or thiourea compound (N, (N, N-dialkyl thiourea compounds, etc.), polymercaptan compounds, polysulfide resins having mercapto groups at the ends thereof, acid anhydrides (such as tetrahydrophthalic anhydride), light and ultraviolet curing agents (diphenyliodonium Hexafluorophosphoric acid, triphenylsulfonium hexafluorophosphoric acid, and the like).

The curing accelerator is not particularly limited as long as it hardens the thermosetting resin. Examples of the curing accelerator include imidazoles, dicyandiamide derivatives, dicarboxylic acid dihydrazide, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, Ethyl-4-methylimidazole-tetraphenylborate, and 1,8-diazabicyclo [5.4.0] undecene-7-tetraphenylborate.

The imidazoles include imidazoles such as imidazole, 2-methylimidazole, 2-ethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, Benzyl-2-ethylimidazole, 1-benzyl-2-ethyl-5-methylimidazole, 2-phenyl- Dimethylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, and the like.

The content of the curing agent for epoxy resin or the curing accelerator in the adhesive layer is not particularly limited, and the optimum content differs depending on the type of curing agent or curing accelerator.

The mixing ratio of the epoxy resin to the phenol resin is preferably such that the hydroxyl group in the phenol resin is equivalent to 0.5 to 2.0 equivalents per equivalent of the epoxy group in the epoxy resin component. More preferably 0.8 to 1.2 equivalents. That is, if the mixing ratio of the two is out of the above range, sufficient curing reaction does not proceed and the properties of the adhesive layer are easily deteriorated. The other thermosetting resin and curing agent are, in one embodiment, 0.5 to 20 parts by mass of the curing agent relative to 100 parts by mass of the thermosetting resin, and 1 to 10 parts by mass of the curing agent in another embodiment. The content of the curing accelerator is preferably less than the content of the curing agent, and is preferably 0.001 to 1.5 parts by mass, more preferably 0.01 to 0.95 parts by mass, relative to 100 parts by mass of the thermosetting resin. By adjusting to the above range, it is possible to assist in the progress of the curing reaction. The content of the catalyst is preferably 0.001 to 1.5 parts by mass, more preferably 0.01 to 1.0 part by mass, per 100 parts by mass of the thermosetting resin.

Further, the adhesive layer (13) of the present invention can appropriately contain a filler according to the use thereof. As a result, it is possible to improve the dicing property of the adhesive layer in the uncured state, to improve handling properties, to adjust the melt viscosity, to impart thixotropic property, to impart heat conductivity in the cured adhesive layer, It is becoming possible.

The filler used in the present invention is preferably an inorganic filler. The inorganic filler is not particularly limited and includes, for example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, alumina, aluminum nitride, aluminum borate whisker, Silica, amorphous silica, antimony oxide and the like can be used. These may be used alone or in combination of two or more.

Among the inorganic fillers, alumina, aluminum nitride, boron nitride, crystalline silica, amorphous silica and the like are preferably used from the viewpoint of improving the thermal conductivity. From the viewpoints of adjusting the melt viscosity and imparting thixotropy, it is possible to use aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, alumina, crystalline silica and amorphous silica . From the viewpoint of improving the dicing property, alumina and silica are preferably used.

When the content of the filler is 30 mass% or more, the wire bonding property is excellent.

In wire bonding, it is preferable that the storage elastic modulus after curing of the adhesive layer for bonding the chip to be wired is adjusted to be in the range of 20 to 1000 MPa at 170 DEG C. When the filler content is 30 mass% or more, It is easy to adjust the post-storage elastic modulus to this range. When the content of the filler is 75 mass% or less, film formability and heat fluidity of the adhesive layer during die bonding are excellent. When the heat flowability of the adhesive layer during die bonding is improved, the adhesion between the adhesive layer and the adherend is improved, and the adhesive strength can be improved. More preferably 70% by mass or less, and further preferably 60% by mass or less.

The adhesive layer of the present invention may include two or more kinds of fillers having different average particle sizes as the filler. In this case, in the raw material mixture before film formation, it is easier to prevent the increase in the viscosity when the filler content is high or the decrease in the viscosity when the filler content is low, so that good film formability can be easily obtained And the flowability of the uncured adhesive layer can be optimally controlled, and excellent adhesion can be easily obtained after curing of the adhesive layer.

In the adhesive layer of the present invention, the average particle diameter of the filler is preferably 2.0 m or less, more preferably 1.0 m. When the average particle diameter of the filler is 2.0 탆 or less, the film can be made thinner easily. Here, the thin film indicates a thickness of 20 μm or less. When the thickness is 0.01 탆 or more, the dispersibility is good.

From the viewpoint of preventing the viscosity increase or decrease of the raw material mixture before film formation, optimally controlling the flowability of the uncured adhesive layer, and improving the adhesive force after curing of the adhesive layer, And a second filler having an average primary particle diameter within a range of 0.005 to 0.03 mu m. Wherein the first filler has an average particle diameter within a range of 0.1 to 1.0 占 퐉 and a particle diameter of 99% or more within a range of 0.1 to 1.0 占 퐉 and a first filler having an average primary particle diameter of 0.005 to 0.03 占 퐉, And 99% or more of the particles include a second filler having a particle diameter within a range of 0.005 to 0.1 mu m.

The average particle diameter in the present invention means the D50 value of the cumulative volume distribution curve in which 50% by volume of particles have a diameter smaller than this value. In the present invention, the average particle size or D50 value is measured by laser diffraction using, for example, Malvern Mastersizer 2000 manufactured by Malvern Instruments. In this technique, the size of the particles in the dispersion is measured using diffraction of the laser beam, based on either an Fraunhofer or Mie theory application. The present invention relates to scatterometry at 0.02 to 135 degrees for an incident laser beam using an average particle size or a D50 value, using the theoretical theory for the theoretical or non-spherical particles.

In one embodiment of the present invention, a thermoplastic resin having a weight average molecular weight of 10 to 40 mass% and a weight average molecular weight of 5,000 to 200,000, and a thermosetting component of 10 to 40 mass%, based on the entire adhesive composition constituting the adhesive layer 13, And 30 to 75% by mass of a filler. In this embodiment, the content of the filler may be 30 to 60 mass% or 40 to 60 mass%.

The mass average molecular weight of the thermoplastic resin may be from 5,000 to 150,000, or from 10,000 to 100,000.

In another embodiment, a thermoplastic resin having a weight average molecular weight of 10 to 20 mass% and a weight average molecular weight of 200,000 to 2,000,000, 20 to 50 mass% of a thermosetting component, and 30 to 75 mass% of the entire adhesive composition constituting the adhesive layer 13 % Filler may be included. In this embodiment, the content of the filler may be 30 to 60 mass% or 30 to 50 mass%. The mass average molecular weight of the thermoplastic resin may be 200,000 to 1,000,000 or 200,000 to 800,000.

It is possible to optimize the storage elastic modulus and fluidity of the adhesive layer 13 after curing and to sufficiently obtain heat resistance at a high temperature by adjusting the blending ratio.

In the tape 10 for semiconductor processing of the present invention, the adhesive layer 13 may be formed by directly or indirectly laminating a preliminarily formed film (hereinafter referred to as an adhesive film) on the base film 11. The temperature at the time of lamination is preferably in the range of 10 to 100 占 폚, and it is preferable to apply a linear pressure of 0.01 to 10 N / m. In this case, the release film may be peeled off after lamination, or may be used as a cover film of the tape 10 for semiconductor processing as it is. Alternatively, the adhesive film 13 may be formed on the surface of the wafer 10, It may be peeled off.

The adhesive film may be laminated on the entire surface of the pressure-sensitive adhesive layer 12, but an adhesive film cut (pre-cut) into a shape corresponding to the wafer to be pre-bonded may be laminated on the pressure-sensitive adhesive layer 12. 3, an adhesive layer 13 is provided at a portion to which the wafer W is adhered, and an adhesive layer 13 is provided at a portion to which the ring frame 20 is adhered, , There is only the pressure-sensitive adhesive layer 12. Generally, since the adhesive layer 13 is difficult to peel off from the adherend, the ring frame 20 can be bonded to the pressure-sensitive adhesive layer 12 by using the pre-cut adhesive film, It is possible to obtain an effect that the debris on the frame 20 is not generated well.

<Applications>

The semiconductor processing tape 10 of the present invention is used in a manufacturing method of a semiconductor device including an expanding step of dividing the adhesive layer 13 at least by expansion. Therefore, the order of other steps or processes is not particularly limited. For example, it can be suitably used in the following production methods (A) to (E) of a semiconductor device.

A method of manufacturing a semiconductor device (A)

(a) a step of bonding a surface protection tape to a wafer surface on which a circuit pattern is formed,

(b) a back grinding step of grinding the back surface of the wafer,

(c) a step of bonding the adhesive layer of the tape for semiconductor processing to the back surface of the wafer while heating the wafer,

(d) peeling the surface protection tape from the wafer surface,

(e) irradiating a laser beam to a portion of the wafer to be divided to form a modified region by multiphoton absorption in the wafer,

(f) expanding the semiconductor processing tape to divide the wafer and the adhesive layer of the semiconductor processing tape along the division line to obtain a plurality of chips to which the adhesive layer is attached;

(g) a step of heat-shrinking a portion of the semiconductor processing tape after the extension which does not overlap with the chip to thereby eliminate a sag occurring in the expansion step and to maintain the interval of the chip,

(h) picking up the chip to which the adhesive layer is attached from the pressure-sensitive adhesive layer of the semiconductor processing tape.

Method for manufacturing semiconductor device (B)

(a) a step of bonding a surface protection tape to a wafer surface on which a circuit pattern is formed,

(b) a back grinding step of grinding the back surface of the wafer,

(c) a step of bonding the adhesive layer of the tape for semiconductor processing to the back surface of the wafer while heating the wafer,

(d) peeling the surface protection tape from the wafer surface,

(e) irradiating a laser beam along a dividing line of the wafer surface to divide the wafer into chips,

(f) an expanding step of dividing the adhesive layer by the chip by expanding the semiconductor processing tape to obtain a plurality of chips to which the adhesive layer is attached;

(g) a step of heat-shrinking a portion of the semiconductor processing tape after the extension which does not overlap with the chip to thereby eliminate a sag occurring in the expansion step and to maintain the interval of the chip,

(h) picking up the chip with the adhesive layer from the pressure-sensitive adhesive layer of the semiconductor processing tape,

Wherein the semiconductor device is a semiconductor device.

A method of manufacturing a semiconductor device (C)

(a) a step of bonding a surface protection tape to a wafer surface on which a circuit pattern is formed,

(b) a back grinding step of grinding the back surface of the wafer,

(c) a step of bonding the adhesive layer of the tape for semiconductor processing to the back surface of the wafer while heating the wafer,

(d) peeling the surface protection tape from the wafer surface,

(e) cutting the wafer along a dividing line using a dicing blade and dividing the wafer into chips,

(f) an expanding step of dividing the adhesive layer by the chip by expanding the semiconductor processing tape to obtain a plurality of chips to which the adhesive layer is attached;

(g) a step of heat-shrinking a portion of the semiconductor processing tape after the extension which does not overlap with the chip to thereby eliminate a sag occurring in the expansion step and to maintain the interval of the chip,

(h) picking up the chip having the adhesive layer attached thereto from the pressure-sensitive adhesive layer of the semiconductor processing tape,

Wherein the semiconductor device is a semiconductor device.

Method for manufacturing semiconductor device (D)

(a) a step of joining a dicing tape to the back surface of a wafer on which a circuit pattern is formed and cutting the wafer along a line to be divided by a dicing blade to a depth less than the thickness of the wafer;

(b) a step of bonding a surface protective tape to the surface of the wafer,

(c) a back grinding step of peeling the dicing tape to grind the back surface of the wafer and to divide the wafer back into chips,

(d) a step of bonding the adhesive layer of the tape for semiconductor processing to the back surface of the wafer divided by the chips while the wafer is heated,

(e) peeling the surface protective tape from the wafer surface divided by the chip,

(f) an expanding step of dividing the adhesive layer by the chip by expanding the tape for semiconductor processing to obtain a plurality of chips to which the adhesive layer is attached, and

(g) In the semiconductor processing tape after expansion, a step of heating and shrinking a portion not overlapping with the chip to thereby eliminate the sag occurring in the expanding step and to maintain the spacing of the chips,

(h) picking up the chip with the adhesive layer from the pressure-sensitive adhesive layer of the semiconductor processing tape.

Method for manufacturing semiconductor device (E)

(a) a step of bonding a surface protection tape to a wafer surface on which a circuit pattern is formed,

(b) a step of irradiating laser light to a part to be divided of the wafer to form a modified region by multiphoton absorption in the wafer,

(c) a back grinding step of grinding the back surface of the wafer,

(d) a step of bonding the adhesive layer of the semiconductor processing tape to the back surface of the wafer in a state in which the wafer is heated,

(e) peeling the surface protection tape from the wafer surface,

(f) expanding the semiconductor processing tape to divide the wafer and the adhesive layer of the semiconductor processing tape along the division line to obtain a plurality of chips to which the adhesive layer is attached;

(g) a step of heat-shrinking a portion of the semiconductor processing tape after expansion that is not overlapped with the chip to thereby eliminate a sag occurring in the expansion process, thereby maintaining the spacing of the chips;

(h) picking up the chip having the adhesive layer attached thereto from the pressure-sensitive adhesive layer of the semiconductor processing tape,

Wherein the semiconductor device is a semiconductor device.

<How to use>

A method of using the tape when the semiconductor processing tape 10 of the present invention is applied to the manufacturing method (A) of the semiconductor device will be described with reference to Figs. 2 to 5. Fig. First, as shown in Fig. 2, a circuit protection tape 14 for protecting a circuit pattern containing an ultraviolet curable component is adhered to the surface of a wafer W on which a circuit pattern is formed, A grinding process is performed.

After the back grinding process is completed, the wafer W is placed on the heater table 25 of the wafer mounter with the front surface side down as shown in Fig. 3, 10). The tape 10 for semiconductor processing used here is obtained by laminating an adhesive film that has been previously cut (precut) in a shape conforming to the wafer W to be bonded, and the adhesive layer 13 And the pressure-sensitive adhesive layer 12 is exposed around the exposed region. A portion of the semiconductor processing tape 10 exposed by the adhesive layer 13 and the back surface of the wafer W are brought into contact with each other and the exposed portion of the adhesive layer 12 around the adhesive layer 13 and the exposed portion of the ring frame 20 ). At this time, the heater table 25 is set at 70 to 80 DEG C, and thermal bonding is performed accordingly. In this embodiment, an adhesive tape 15 composed of a base film 11 and a pressure-sensitive adhesive layer 12 provided on the base film 11 and an adhesive layer 13 provided on the pressure- The semiconductor processing tape 10 is used, but an adhesive tape and a film adhesive may be used. In this case, first, a film adhesive is applied to the back surface of the wafer to form an adhesive layer, and the adhesive layer of the adhesive tape is applied to the adhesive layer. At this time, the adhesive tape 15 according to the present invention is used as the adhesive tape.

The wafer W to which the semiconductor processing tape 10 has been bonded is taken out from the heater table 25 and the semiconductor processing tape 10 is lowered on the suction table 26 . Ultraviolet rays of, for example, 1000 mJ / cm 2 are irradiated from the upper side of the wafer W sucked and fixed to the suction table 26 by using the energy ray source 27 to the substrate surface side of the surface protective tape 14 And the adhesive strength of the surface protective tape 14 to the wafer W is lowered to peel the surface protective tape 14 from the surface of the wafer W. [

Next, as shown in Fig. 5, laser light is irradiated to the portion to be divided of the wafer W to form the modified region 32 by multiphoton absorption inside the wafer W.

6 (a), the semiconductor processing tape 10 to which the wafer W and the ring frame 20 are bonded is placed on the stage 21 of the expanding device with the base film 11 side down ).

6 (b), the hollow cylindrical pressure member 22 of the expansion device is elevated in a state in which the ring frame 20 is fixed, and the semiconductor processing tape 10 is expanded (expanded) do. As the expansion condition, the expansion speed is, for example, 5 to 500 mm / sec, and the expansion amount (pressure amount) is, for example, 5 to 25 mm. As described above, the semiconductor processing tape 10 extends in the radial direction of the wafer W, so that the wafer W is divided into chips 34 with the modified region 32 as a starting point. At this time, the adhesive layer 13 is prevented from being extended (deformed) due to expansion due to expansion at the portion bonded to the back surface of the wafer W so that no break occurs. However, at the position between the chips 34, . Therefore, as shown in Fig. 6 (c), the adhesive layer 13 is also divided along with the wafer W. Thus, a plurality of chips 34 to which the adhesive layer 13 is adhered can be obtained.

Next, as shown in Fig. 7, the pressure member 22 is returned to its original position, and the slack of the tape 10 for semiconductor processing, which has occurred in the expansion step, is removed to stably maintain the interval of the chips 34 Process is carried out. In this step, for example, hot-air nozzles (not shown) are provided in a circular annular heat shrinkage region 28 between the region where the chip 34 is present in the semiconductor processing tape 10 and the ring frame 20 29), the base film 11 is heat-shrunk by applying a hot air of 90 to 120 ° C, and the semiconductor processing tape 10 is stretched and stretched.

Thereafter, the pressure sensitive adhesive layer 12 is subjected to an energy ray hardening treatment or a heat hardening treatment to weaken the adhesive force of the pressure sensitive adhesive layer 12 with respect to the adhesive layer 13, and then the chip 34 is picked up.

Further, as described above, it is also preferable that the energy ray hardening treatment be performed before the expansion treatment is performed.

<Examples>

Next, in order to further clarify the effects of the present invention, examples and comparative examples will be described in detail, but the present invention is not limited to these examples.

[Fabrication of tape for semiconductor processing]

(1) Production of base film

<Base film 1A>

(Density: 0.96 g / cm ³ , zinc ion content: 4% by mass, chlorine content: 4% by mass) of the ethylene-methacrylic acid-ethyl methacrylate (weight ratio 8: 1: 1) ternary copolymer synthesized by the radical polymerization method Less than 1% by mass, Vicat softening point 56 占 폚, melting point 86 占 폚) was melted at 140 占 폚 and molded into a long film having a thickness of 100 占 퐉 by using an extruder.

<Base film 2A>

Synthesized by the radical polymerization method, ethylene-methacrylic acid (weight ratio 7.5: 2.5) 2 won zinc ionomer b (the density of the copolymer 0.96g / cm ^3, a zinc ion content of 6% by mass, the chlorine content less than 1 mass%, the softening point bikeot 65 占 폚, melting point 88 占 폚) was melted at 140 占 폚 and molded into an elongated film having a thickness of 100 占 퐉 by using an extruder to produce a base film 2A.

<Base Film 3A>

(Density: 0.95 g / cm ³ , zinc ion content: 3 mass%, chlorine content: 1 mass% or less, noncaten softening point: 9 mass%) synthesized by radical polymerization of ethylene-methacrylic acid 84 占 폚, melting point 102 占 폚) was melted at 140 占 폚 and molded into a long film having a thickness of 100 占 퐉 by using an extruder to produce a base film 3A.

&Lt; Base material film 4A &

Resin beads of Novatek PP FW4B (polypropylene) (density: 0.90 g / cm ³ , softening point: 96 占 폚, melting point: 140 占 폚) manufactured by Japan Polychem Co., Ltd. were melted at 180 占 폚, Thereby forming a base film 4A.

(2) Adjustment of the pressure-sensitive adhesive composition

(Adhesive 1B)

Ethylhexyl acrylate, 2-hydroxyethyl acrylate and methacrylic acid as the acrylic copolymer (A1) having a functional group and having a proportion of 2-ethylhexyl acrylate of 55 mol% and a mass average molecular weight of 750,000 To prepare a copolymer. Then, 2-isocyanate ethyl methacrylate was added so that the iodine value was 25 to prepare an acrylic copolymer (a-1) having a glass transition temperature of -50 ° C, a hydroxyl value of 10 g KOH / g and an acid value of 5 mg KOH / g .

3 parts by mass of P301-75E (manufactured by Asahi Chemical Industry Co., Ltd.) as polyisocyanate and 3 parts by mass of Esacure KIP 150 (produced by Lamberti) as a photopolymerization initiator were added to 100 parts by mass of the acrylic copolymer (a-1) Was dissolved in ethyl acetate and stirred to prepare a pressure-sensitive adhesive 1B.

(Adhesive 2B)

Ethylhexyl acrylate, 2-hydroxyethyl acrylate and methacrylic acid as the acrylic copolymer (A2) having a functional group and having a proportion of 2-ethylhexyl acrylate of 55 mol% and a mass average molecular weight of 750,000 To prepare a copolymer. Then, 2-isocyanatoethyl methacrylate was added so that the iodine value was 20 to prepare an acrylic copolymer (a-2) having a glass transition temperature of -50 占 폚, a hydroxyl value of 15 g KOH / g and an acid value of 5 mg KOH / g .

3 parts by mass of P301-75E (manufactured by Asahi Chemical Industry Co., Ltd.) as polyisocyanate and 3 parts by mass of Esacure KIP 150 (produced by Lamberti) as a photopolymerization initiator were added to 100 parts by mass of the acrylic copolymer (a-2) Was dissolved in ethyl acetate and stirred to prepare a pressure-sensitive adhesive 2B.

(Adhesive 3B)

Ethylhexyl acrylate, 2-hydroxyethyl acrylate and methacrylic acid as the acrylic copolymer (A3) having a functional group and having a proportion of 2-ethylhexyl acrylate of 55 mol% and a mass average molecular weight of 750,000 To prepare a copolymer. Then, 2-isocyanate ethyl methacrylate was added so that the iodine number was 15 to prepare an acrylic copolymer (a-3) having a glass transition temperature of -50 ° C, a hydroxyl value of 20 g KOH / g and an acid value of 5 mg KOH / g .

3 parts by mass of P301-75E (manufactured by Asahi Kasei Chemicals Co., Ltd.) as a polyisocyanate was added to 100 parts by mass of the acrylic copolymer (a-3), and 3 parts by mass of Esacure KIP 150 (manufactured by Lamberti) Was dissolved in ethyl acetate and stirred to prepare a pressure-sensitive adhesive 3B.

(Adhesive 4B)

Ethylhexyl acrylate, 2-hydroxyethyl acrylate and methacrylic acid as the acrylic copolymer (A4) having a functional group and having a proportion of 2-ethylhexyl acrylate of 55 mol% and a mass average molecular weight of 750,000 To prepare a copolymer. Then, 2-isocyanatoethyl methacrylate was added so that the iodine number was 5 to prepare an acrylic copolymer (a-4) having a glass transition temperature of -50 ° C, a hydroxyl value of 30 mg KOH / g and an acid value of 5 mg KOH / g .

3 parts by mass of P301-75E (manufactured by Asahi Chemical Industry Co., Ltd.) as polyisocyanate and 3 parts by mass of Esacure KIP 150 (produced by Lamberti) as a photopolymerization initiator were added to 100 parts by mass of the acrylic copolymer (a-4) Was dissolved in ethyl acetate and stirred to prepare a pressure-sensitive adhesive 4B.

(3) Production of adhesive sheet

The pressure sensitive adhesives 1B to 4B were applied to a release liner composed of a release-treated polyethylene terephthalate film so as to have a thickness of 10 占 퐉, dried at 110 占 폚 for 2 minutes and then stuck with a base film of 1A to 4A A pressure-sensitive adhesive sheet having a pressure-sensitive adhesive layer formed on a film was produced. The combination of the base films 1A to 4A and the pressure-sensitive adhesives 1B to 4B is shown in Table 1 in the examples.

(4) Preparation of adhesive composition

50 parts by mass of epoxy resin "1002" (solid bisphenol A type epoxy resin, epoxy equivalent 600, manufactured by Mitsubishi Chemical Corporation), epoxy resin "806" (trade name of Mitsubishi Chemical Corporation, bisphenol F type epoxy resin, (Trade name, manufactured by Admatech Co., Ltd., average particle size 0.5 占 퐉) 150 parts by mass of a silica filler "SO-C2", 100 parts by mass of a curing agent "Dyhard100SF" (trade name, dicyandiamide) , And 5 parts by mass of silica filler "Aerosil R972" (trade name, manufactured by Aero Chemical Co., Ltd., average particle size of primary particle diameter: 0.016 μm) were added to the composition, Composition.

100 parts by mass of phenoxy resin &quot; PKHH &quot; (product name, product of INCHEM, mass average molecular weight: 52,000, glass transition temperature: 92 占 폚), 100 parts by mass of "KBM- 802" (trade name of Shin-Etsu Silicone Co., 0.4 parts by mass as a curing accelerator, &quot; CUAZOL 2 PHZ-PW &quot; (trade name, 2-phenyl-4,5-dihydroxymethylimidazole, And the mixture was stirred and mixed until uniform. Further, it was filtered with a 100-mesh filter, and vacuum de-encapsulation was carried out to obtain varnish of the adhesive composition.

(5) Preparation of adhesive film

Then, the adhesive composition was applied to a release liner composed of a release-treated polyethylene terephthalate film so as to have a thickness of 20 占 퐉 and dried at 130 占 폚 for 3 minutes to form an adhesive film having an adhesive layer on the release liner .

(Preparation of tape for semiconductor processing)

The pressure-sensitive adhesive sheet was cut into a shape shown in Fig. 3 or the like, which can be attached so as to cover the opening portion with respect to the ring frame. In addition, the adhesive film was cut into a shape shown in Fig. 3 or the like which is capable of covering the back surface of the wafer. The side of the pressure-sensitive adhesive sheet of the pressure-sensitive adhesive sheet and the side of the adhesive layer of the pressure-sensitive adhesive sheet were bonded together so as to form a portion of the pressure-sensitive adhesive layer 12 exposed around the pressure-sensitive adhesive film as shown in Fig.

&Lt; Examples 1 to 5 and Comparative Examples 1, 3 and 5 &gt;

A surface protective tape is applied to the surface of the wafer on which the circuit pattern is formed,

Irradiating a laser beam to a part to be divided of the wafer to form a modified area by multiphoton absorption in the wafer,

A back grinding process for grinding the back surface of the wafer is performed,

The adhesive layer of the semiconductor processing tape is bonded to the back surface of the wafer while the wafer is heated to 70 to 80 占 폚,

Peeling the surface protection tape from the wafer surface,

The tape for semiconductor processing was subjected to an ultraviolet ray irradiation treatment at an output of 200 mJ / cm 2,

Dividing the adhesive layer of the wafer and the semiconductor processing tape along the division line by expanding the semiconductor processing tape to perform an expansion step of obtaining a plurality of chips to which the adhesive layer is attached,

A sag generated in the expanding step is removed by heating and shrinking a portion of the semiconductor processing tape which does not overlap with the chip (a circular annular region between the region where the chip exists and the ring frame) at 100 캜, The following properties of the semiconductor processing tape were evaluated. The chip size is 5 mm x 5 mm.

&Lt; Comparative Example 2 &

Evaluation of physical properties shown below was performed on the semiconductor processing tape subjected to the same processes as in Examples 1 to 5 and Comparative Examples 1 and 3 to 5, except that the ultraviolet ray irradiation treatment was not performed.

[Table 1]

(Measurement of stress)

The pressure-sensitive adhesive tape in the step of dividing the adhesive layer by the above expansion was subjected to a tensile test according to the method specified in JIS 7162 to measure the stress exerted only on the substrate and the stress on the pressure-sensitive adhesive tape when the tensile elongation was 10%.

The above "stress of the adhesive tape" refers to the stress of the semiconductor processing tape 10 of the present invention taken from the expansion process of the semiconductor device manufacturing method.

The "stress only on the substrate" is the stress of the base film 11 only before the pressure-sensitive adhesive layer 12 is provided on the base film 11.

&Lt; Evaluation of pick-

A step of picking up the semiconductor chip from the pressure-sensitive adhesive layer of the tape for semiconductor processing was performed to evaluate the pick-up property.

Concretely, a pick-up test was carried out on 1000 chips with a die picker apparatus (CAP-300 II, trade name, manufactured by Canon Machinery Inc.) and the adhesive layer peeled from the pressure-sensitive adhesive layer was retained The pick-up success rate was calculated, and the pick-up performance was evaluated.

&Quot;, &quot; &quot;, &quot; good &quot;, &quot;

&Quot;? &Quot;, &quot;? &Quot;, &quot;

Quot ;, &quot; DELTA &quot;, &quot; DELTA &quot;, &

And less than 95% was evaluated as &quot; x &quot; as a defective product.

&Lt; Evaluation of uniformity of cuff width &gt;

In the 12-inch wafer, the cuff width in the longitudinal direction and the width direction of the central part of the effective chip (5 mm x 5 mm) was measured,

&Quot; &amp; cir &amp; &quot;

&Quot; &amp; cir &amp; &quot;, &quot;

&Quot;? &Quot;

&Quot; x &quot;

Respectively.

Table 2 shows the results of these stress and cuff width evaluations and pick-up evaluations.

[Table 2]

&Lt; Evaluation result &gt;

As shown in Table 2, it was found that Examples 1 to 5 satisfying the stress of only the stress / base material of the pressure-sensitive adhesive tape of 1 or less satisfied the cuff width sufficiently and uniformly, and exhibited good pick-up properties not available in the prior art .

On the other hand, Comparative Examples 1 to 4, which did not satisfy the above condition, showed an evaluation that the cuff width was narrow or uneven and the pickupability was poor.

10: Tape for semiconductor processing
11: base film
12: pressure-sensitive adhesive layer
13: Adhesive layer
14: Surface protective tape
15: auxiliary tape
20: ring frame
21: stage
22: pressure member
25: Heater table
26: Adsorption table
27: ultraviolet (energy ray) light source
28: Heat shrinkage area
29: Hot air nozzle
32: modified region
34: Chip

Claims (7)

A pressure-sensitive adhesive tape comprising a base film and a pressure-sensitive adhesive layer formed on at least one side of the base film, wherein in the step of dividing the adhesive by expansion, the pressure-sensitive adhesive tape is subjected to a tensile test according to the method defined in JIS 7162, The relationship between the stress only in the base material and the stress in the pressure-sensitive adhesive tape at the elongation of 10%
0 < stress of adhesive tape / stress only in substrate &lt; = 0.96,
Wherein the base film is an uncrosslinked resin comprising a mixed resin of polypropylene and styrene-butadiene copolymer. The method according to claim 1,
In the semiconductor processing tape,
(a) a step of bonding a surface protection tape to a wafer surface on which a circuit pattern is formed,
(b) a back grinding step of grinding the back surface of the wafer,
(c) a step of bonding the adhesive layer of the tape for semiconductor processing to the back surface of the wafer while heating the wafer,
(d) peeling the surface protection tape from the wafer surface,
(e) irradiating a laser beam to a portion of the wafer to be divided to form a modified region by multiphoton absorption in the wafer,
(f) an expansion step of dividing the adhesive layer of the wafer and the semiconductor processing tape along the division line by extending the semiconductor processing tape to obtain a plurality of chips to which the adhesive layer is attached;
(g) a step of heat-shrinking a portion of the semiconductor processing tape after expansion that is not overlapped with the chip to thereby eliminate a sag occurring in the expansion process, thereby maintaining the spacing of the chips;
(h) picking up the chip with the adhesive layer from the pressure-sensitive adhesive layer of the semiconductor processing tape. The method according to claim 1,
In the semiconductor processing tape,
(a) a step of bonding a surface protection tape to a wafer surface on which a circuit pattern is formed,
(b) a back grinding step of grinding the back surface of the wafer,
(c) a step of bonding the adhesive layer of the tape for semiconductor processing to the back surface of the wafer while heating the wafer,
(d) peeling the surface protection tape from the wafer surface,
(e) irradiating a laser beam along a dividing line of the wafer surface to divide the wafer into chips,
(f) an expanding step of dividing the adhesive layer by the chip by expanding the tape for semiconductor processing to obtain a plurality of chips to which the adhesive layer is attached, and
(g) a step of heat-shrinking a portion of the semiconductor processing tape after expansion that is not overlapped with the chip to thereby eliminate a sag occurring in the expansion process, thereby maintaining the spacing of the chips;
(h) picking up the chip with the adhesive layer from the pressure-sensitive adhesive layer of the semiconductor processing tape. The method according to claim 1,
In the semiconductor processing tape,
(a) a step of bonding a surface protection tape to a wafer surface on which a circuit pattern is formed,
(b) a back grinding step of grinding the back surface of the wafer,
(c) a step of bonding the adhesive layer of the tape for semiconductor processing to the back surface of the wafer while heating the wafer,
(d) peeling the surface protection tape from the wafer surface,
(e) cutting the wafer along a dividing line using a dicing blade and dividing the wafer into chips,
(f) an expanding step of dividing the adhesive layer by the chip by expanding the semiconductor processing tape to obtain a plurality of chips to which the adhesive layer is attached;
(g) a step of heat-shrinking a portion of the semiconductor processing tape after expansion that is not overlapped with the chip to thereby eliminate a sag occurring in the expansion process, thereby maintaining the spacing of the chips;
(h) picking up the chip with the adhesive layer from the pressure-sensitive adhesive layer of the semiconductor processing tape. The method according to claim 1,
In the semiconductor processing tape,
(a) a step of joining a dicing tape to the back surface of a wafer on which a circuit pattern is formed and cutting the wafer along a line along which the wafer is to be divided to a depth less than the thickness of the wafer by using a dicing blade,
(b) a step of bonding a surface protective tape to the surface of the wafer,
(c) a back grinding step of peeling off the dicing tape, grinding the back surface of the wafer and dividing the wafer back into chips,
(d) a step of bonding the adhesive layer of the tape for semiconductor processing to the back surface of the wafer divided by the chips while the wafer is heated,
(e) peeling the surface protective tape from the wafer surface divided by the chip,
(f) an expanding step of dividing the adhesive layer by the chip by expanding the semiconductor processing tape to obtain a plurality of chips to which the adhesive layer is attached;
(g) In the semiconductor processing tape after expansion, a step of heating and shrinking a portion not overlapping with the chip to thereby eliminate sagging in the expansion process, thereby maintaining the spacing of the chips;
(h) picking up the chip with the adhesive layer from the pressure-sensitive adhesive layer of the semiconductor processing tape. The method according to claim 1,
In the semiconductor processing tape,
(a) a step of bonding a surface protection tape to a wafer surface on which a circuit pattern is formed,
(b) a step of irradiating laser light to a part to be divided of the wafer to form a modified region by multiphoton absorption in the wafer,
(c) a back grinding step of grinding the back surface of the wafer,
(d) a step of bonding the adhesive layer of the semiconductor processing tape to the back surface of the wafer in a state in which the wafer is heated,
(e) peeling the surface protection tape from the wafer surface,
(f) an expansion step of dividing the adhesive layer of the wafer and the semiconductor processing tape along the division line by extending the semiconductor processing tape to obtain a plurality of chips to which the adhesive layer is attached;
(g) a step of heat-shrinking a portion of the semiconductor processing tape after expansion that is not overlapped with the chip to thereby eliminate a sag occurring in the expansion process, thereby maintaining the spacing of the chips;
(h) picking up the chip with the adhesive layer from the pressure-sensitive adhesive layer of the semiconductor processing tape. A semiconductor device using the tape for semiconductor processing according to any one of claims 1 to 6.

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