KR102112772B1 - Semiconductor processing tape - Google Patents

Abstract

Provided is a semiconductor processing tape capable of being sufficiently shrunk in a short time and maintaining a cuff width.
The tape 10 for semiconductor processing of the present invention has an adhesive tape 15 having a base film 11 and an adhesive layer 12 formed on at least one side of the base film 11, and the adhesive tape 15 ) Is the sum of the differential values of the thermal strain rate every 1 ° C between 40 ° C and 80 ° C measured at elevated temperature by the thermomechanical property tester in the MD direction, and the thermomechanical property tester in the TD direction. It is characterized in that the sum of the sum of the differential values of the thermal strain at every 1 ° C between 40 ° C and 80 ° C measured at elevated temperature is a negative value.

Description

Semiconductor processing tape

The present invention can be used to fix a wafer in a dicing step of dividing the wafer into chip-like elements, and also to a die bonding step or a mounting step of bonding the chip to chip or chip to substrate after dicing. The present invention relates to an expandable semiconductor processing tape that can be used and can also be used in a process of dividing an adhesive layer along a chip by expansion.

Background Art Conventionally, in a manufacturing process of a semiconductor device such as an integrated circuit (IC), a backgrinding process of grinding the wafer backside to thin the wafer after circuit pattern formation, a tape for semiconductor processing having adhesive and elasticity on the backside of the wafer After attaching, the dicing process to divide the wafer in chip units, the expanding process to expand (expand) the tape for semiconductor processing, the pickup process to pick up the divided chips, and also adhere the picked up chip to the lead frame or package substrate A die bonding (mounting) process (or, in a stacked package, in which chips are stacked and adhered) is performed.

In the backgrinding process, a surface protection tape is used to protect the circuit pattern forming surface (wafer surface) of the wafer from contamination. When the surface protection tape is peeled off the surface of the wafer after grinding the back surface of the wafer, the semiconductor processing tape (dicing die bonding tape) described below is bonded to the wafer back surface, and the semiconductor processing tape side is attached to the adsorption table. After fixing and subjecting the surface protection tape to a treatment for reducing the adhesion to the wafer, the surface protection tape is peeled off. The wafer from which the surface protection tape has been peeled is then lifted from the adsorption table in a state where the wafer is bonded to the back surface, and is provided for the next dicing step. Note that the treatment for reducing the adhesive force is an energy ray irradiation treatment when the surface protection tape contains an energy ray-curable component such as ultraviolet rays, or a heat treatment when the surface protection tape contains a thermosetting component.

In the dicing step or the mounting step after the back grinding step, a tape for semiconductor processing in which an adhesive layer and an adhesive layer are laminated in this order on a base film is used. In general, when using such a tape for semiconductor processing, first, the adhesive layer of the semiconductor processing tape is bonded to the back surface of the wafer to fix the wafer, and the wafer and the adhesive layer are diced in chip units using a dicing blade. do. Thereafter, an expanding process is performed in which the distance between chips is expanded by expanding the tape in the radial direction of the wafer. This expand step is performed in the subsequent pick-up step to improve chip recognition by a CCD camera or the like, and to prevent chip damage caused by contact between adjacent chips when picking up the chip. . Thereafter, the chip is peeled off from the pressure-sensitive adhesive layer together with the adhesive layer in the pick-up step, and picked up and directly adhered to a lead frame, a package substrate, or the like in the mount step. In this way, by using the tape for semiconductor processing, since it is possible to directly adhere the chip with the adhesive layer to a lead frame or a package substrate, the process of applying the adhesive or separately bonding the die bonding film to each chip is omitted. can do.

However, in the dicing step, as described above, since the wafer and the adhesive layer are diced together using a dicing blade, not only the wafer's cutting chip but also the adhesive layer's cutting chip is generated. Further, when the cutting chips of the adhesive layer were accumulated in the dicing grooves of the wafer, the chips adhered to each other, resulting in defects such as pickup, and there was a problem that the manufacturing yield of the semiconductor device was lowered.

In order to solve this problem, a method of dividing the adhesive layer into individual chips has been proposed by dicing only the wafer by a blade in the dicing step and expanding the tape for semiconductor processing in the expand step (eg. For example, patent document 1). According to such a method of dividing the adhesive layer using the tension at the time of expansion, cutting chips of the adhesive are not generated, and there is no adverse effect in the pick-up process.

In addition, in recent years, a so-called stealth dicing method, which can cut a wafer in a non-contact manner using a laser processing apparatus, has been proposed as a method for cutting a wafer. For example, in Patent Document 2, as a stealth dicing method, an adhesive layer (die bond resin layer) is interposed to focus the inside of the semiconductor substrate on which the sheet is attached, and irradiate laser light to thereby embed the inside of the semiconductor substrate. A method of cutting a semiconductor substrate comprising a step of forming a modified region by multiphoton absorption in the region, and making the modified region a portion to be cut, and a step of expanding the sheet to cut the semiconductor substrate and the adhesive layer along the portion to be cut. It is disclosed.

In addition, as a method of cutting another wafer using a laser processing apparatus, for example, Patent Document 3 includes a step of attaching an adhesive layer (adhesive film) for die bonding to the back surface of the wafer and a wafer to which the adhesive layer is bonded. The step of bonding the stretchable protective adhesive tape to the adhesive layer side, and the step of dividing the chip into individual chips by irradiating a laser beam along the street from the surface of the wafer to which the protective adhesive tape is bonded, and expanding the protective adhesive tape. A method of dividing a wafer has been proposed, which includes applying a tensile force to the adhesive layer, breaking the adhesive layer for each chip, and detaching the chip to which the broken adhesive layer is bonded from the protective adhesive tape.

According to the method of cutting the wafers described in Patent Documents 2 and 3, since the wafer is cut in a non-contact manner by irradiation of laser light and expansion of the tape, the physical load on the wafer is small, and blade dicing, which is currently mainstream, is performed. It is possible to cut a wafer without generating a cutting chip (chipping) of the wafer as in the case. In addition, since the adhesive layer is divided by expansion, cutting chips of the adhesive layer are not generated. For this reason, it has attracted attention as an excellent technology that can replace blade dicing.

However, as described in Patent Documents 1 to 3, in the method of expanding by expansion and dividing the adhesive layer, in the case of using a conventional tape for semiconductor processing, with an increase in the amount of expansion, the expansion ring is used. There has been a problem that the pushed-up portion is stretched, and the portion is relaxed after releasing the expand, so that the spacing between chips (hereinafter referred to as "cuff width") cannot be maintained.

Accordingly, a method is proposed in which the adhesive layer is divided by an expand, and after the expand is released, the relaxed portion of the tape for semiconductor processing is shrunk by heating to maintain the cuff width (for example, Patent Document 4). , 5).

Japanese Patent Publication No. 2007-5530 Japanese Patent Publication No. 2003-338467 Japanese Patent Publication No. 2004-273895 International Publication No. 2016/152957 Japanese Patent Publication No. 2015-211081

By the way, as a method of shrinking the relaxation of the tape for semiconductor processing generated by the expansion by heating, generally, a pair of warm air nozzles are circulated in an annular portion pushed up from the expansion ring to cause relaxation. A method of shrinking heat by applying warm air to a portion is used.

In the tape for semiconductor processing described in Patent Document 4, the heat shrinkage in both the longitudinal direction and the width direction of the tape when heated at 100 ° C. for 10 seconds is 0% or more and 20% or less. However, since the temperature near the surface of the tape for semiconductor processing gradually increases when the hot air nozzle is rotated and heated, there is a problem that it takes time to remove the relaxation of all the annular locations. In addition, there is a problem that the cuff width retainability is not sufficient, and when chips are picked up, adjacent chips are also easily picked up at the same time, and the yield of the semiconductor component manufacturing process is deteriorated.

In addition, the tape for semiconductor processing described in Patent Document 5 has a shrinkage ratio at 130 ° C to 160 ° C of 0.1% or more (see claim 1 in the specification of Patent Document 5), and the temperature at which shrinkage occurs is high. Therefore, when the heat shrinkage is performed by warm air, a high temperature and a long heating time are required, and the hot air affects the adhesive layer near the outer periphery of the wafer, and the divided adhesive layer may melt and re-melt. In addition, the cuff width retainability is not sufficient, and when chips are picked up, adjacent chips are also picked up at the same time, and there is a problem that the yield of the semiconductor component manufacturing process deteriorates.

Accordingly, an object of the present invention is to provide a tape for semiconductor processing capable of sufficiently heat-shrinking in a short time and sufficiently maintaining a cuff width so as to suppress the simultaneous pick-up of adjacent chips.

In order to solve the above problems, the tape for semiconductor processing according to the present invention has an adhesive tape having a base film and an adhesive layer formed on at least one side of the base film, wherein the adhesive tape is a thermomechanical system in the MD direction 40 ℃ to 80 ℃ measured at the temperature rise by the thermomechanical characteristics tester in the TD direction and the sum of the differential values of the thermal strains every 1 ℃ between 40 ℃ and 80 ℃ measured at the temperature increase by the characteristic tester It is characterized in that the sum of the sum of the differential values of the thermal strain at every 1 占 폚 between is a negative value.

Moreover, it is preferable that the adhesive tape and the release film are laminated | stacked in this order on the said adhesive layer side in the said tape for semiconductor processing.

In addition, the semiconductor processing tape is preferably used for full-cut and half-cut blade dicing, full-cut laser dicing, or laser stealth dicing.

According to the tape for semiconductor processing according to the present invention, it is possible to sufficiently heat and shrink in a short time, and the cuff width can be sufficiently maintained such that adjacent chips can be suppressed from being picked up simultaneously.

1 is a cross-sectional view schematically showing the structure of a tape for semiconductor processing according to an embodiment of the present invention.
It is sectional drawing which shows the state in which the surface protection tape was bonded to the wafer.
3 is a cross-sectional view for explaining a process of bonding a wafer and a ring frame to a tape for semiconductor processing according to an embodiment of the present invention.
It is sectional drawing explaining the process of peeling a surface protection tape from the surface of a wafer.
5 is a cross-sectional view showing a state where a modified region is formed on a wafer by laser processing.
6A is a cross-sectional view showing a state in which a semiconductor processing tape according to an embodiment of the present invention is mounted on an expander. (b) is a cross-sectional view showing a process of dividing a wafer into chips by expanding the tape for semiconductor processing. (c) is a cross-sectional view showing a semiconductor processing tape, an adhesive layer and a chip after expansion.
7 is a cross-sectional view for explaining a heat shrink process.
It is explanatory drawing which shows the measuring point of the cuff width in evaluation of an Example and a comparative example.
9 is an example of the result of measuring the thermal strain.

Hereinafter, embodiments of the present invention will be described in detail.

1 is a cross-sectional view showing a tape 10 for semiconductor processing according to an embodiment of the present invention. In the tape 10 for semiconductor processing of the present invention, when the wafer is divided into chips by expansion, the adhesive layer 13 is divided along the chips. The semiconductor processing tape 10 includes an adhesive tape 15 including a base film 11 and an adhesive layer 12 formed on the base film 11 and an adhesive layer 13 formed on the adhesive layer 12 ), And the back surface of the wafer is bonded onto the adhesive layer 13. In addition, each layer may be cut (pre-cut) into a predetermined shape in advance in accordance with the use process or device. In addition, the tape 10 for semiconductor processing of this invention may be the form cut | disconnected every 1 minute of wafers, or may be the form which wound the long sheet in which several cut | disconnected every 1 wafer is formed in roll shape. The structure of each layer will be described below.

 <Base film>

The base film 11 is preferable in that it can uniformly and isotropically expand the wafer in the expand process, so that the wafer can be cut in all directions without bias, and the material is not particularly limited. In general, a crosslinked resin has a large resilience to tensile compared to a non-crosslinked resin, and has a large shrinkage stress when heat is applied to the stretched state after the expand process. Therefore, it is excellent in that the relaxation generated in the tape after the expand process is removed by heat shrinking, and the tape is tensioned to maintain the individual chip spacing (cuff width) stably. Among the crosslinked resins, thermoplastic crosslinked resins are more preferably used. On the other hand, the non-crosslinking resin has a smaller restoring force to tensile than the crosslinked resin. Therefore, after the expansion process in a low temperature region such as -15 ° C to 0 ° C, once loosened and returned to room temperature, the tape toward the pick-up process and the mounting process is difficult to shrink, so that it is attached to the chip. It is excellent in that it can prevent the adhesive layers from contacting each other. Among the non-crosslinking resins, olefin-based non-crosslinking resins are more preferably used.

As such a thermoplastic crosslinked resin, for example, a ethylene- (meth) acrylic acid binary copolymer or an ethylene- (meth) acrylic acid- (meth) acrylic acid alkyl ester as a main polymer constituent component is a ternary copolymer as a metal ion. Crosslinked ionomer resins are exemplified. These are suitable for the expand process in terms of uniform scalability, and are particularly suitable in that a strong restoring force acts upon heating by crosslinking. The metal ion contained in the ionomer resin is not particularly limited, and zinc and sodium may be mentioned, but zinc ion is preferable in view of low elution property and low contamination. In the (meth) acrylic acid alkyl ester of the ternary copolymer, it is preferable that the alkyl group having 1 to 4 carbon atoms has high elastic modulus and can propagate a strong force against the wafer. Examples of such (meth) acrylate alkyl esters include methyl methacrylate, ethyl methacrylate, propyl methacrylate, butyl methacrylate, methyl acrylate, ethyl acrylate, propyl acrylate, and butyl acrylate.

In addition, as the above-mentioned thermoplastic crosslinking resin, in addition to the ionomer resin, electron beams for resins selected from a specific gravity of 0.910 or more to less than 0.930 of low density polyethylene, or a specific gravity of less than 0.910 of ultra low density polyethylene, and other ethylene-vinyl acetate copolymers It is also suitable to crosslink by irradiating energy rays such as. Such a thermoplastic crosslinked resin has a uniform uniform expandability because the crosslinked and non-crosslinked sites coexist in the resin. In addition, since the restoring force acts strongly upon heating, it is also suitable for removing the relaxation of the tape generated in the expanding process, and because it contains little chlorine in the structure of the molecular chain, even if the tape which was unnecessary after use is incinerated, Since it does not generate chlorinated aromatic hydrocarbons such as dioxins or analogs thereof, the environmental load is small. By appropriately preparing the amount of energy rays irradiated with respect to the polyethylene or ethylene-vinyl acetate copolymer, a resin having sufficient uniform expandability can be obtained.

Moreover, as a non-crosslinking resin, the mixed resin composition of polypropylene and a styrene-butadiene copolymer is illustrated, for example.

As the polypropylene, for example, a propylene homopolymer or a block or random propylene-ethylene copolymer can be used. The random propylene-ethylene copolymer is preferred because of its low rigidity. When the content ratio of the ethylene constitutional unit in the propylene-ethylene copolymer is 0.1% by weight or more, it is excellent in that the rigidity of the tape and the compatibility between the resins in the mixed resin composition are high. When the stiffness of the tape is moderate, the cutability of the wafer is improved, and when the compatibility between resins is high, the extrusion discharge amount is easily stabilized. More preferably, it is 1% by weight or more. Moreover, when the content rate of the ethylene structural unit in the propylene-ethylene copolymer is 7% by weight or less, it is excellent in that polypropylene is stable and easy to polymerize. More preferably, it is 5% by weight or less.

As the styrene-butadiene copolymer, hydrogenated ones may be used. When the styrene-butadiene copolymer is hydrogenated, compatibility with propylene is good, and embrittlement and discoloration due to oxidation deterioration due to double bonds in butadiene can be prevented. Moreover, when the content rate of the styrene structural unit in a styrene-butadiene copolymer is 5 weight% or more, it is preferable from the point that a styrene-butadiene copolymer is stable and easy to polymerize. Moreover, when it is 40 weight% or less, it is flexible and has excellent expandability. It is more preferably 25% by weight or less, and still more preferably 15% by weight or less. As the styrene-butadiene copolymer, either a block copolymer or a random copolymer can be used. The random copolymer is preferable because the styrene phase is uniformly dispersed and the rigidity can be suppressed from becoming too large, and the expandability is improved.

When the content ratio of the polypropylene in the mixed resin composition is 30% by weight or more, it is excellent in that the thickness unevenness of the base film can be suppressed. When the thickness is uniform, the expandability tends to be isotropic, and the stress relaxation property of the base film becomes too large, and the distance between chips becomes small over time, making it easy to prevent the adhesive layers from contacting each other and re-melting. More preferably, it is 50% by weight or more. Moreover, when the content ratio of polypropylene is 90% by weight or less, it is easy to properly adjust the stiffness of the base film. If the stiffness of the base film becomes too large, the force required to expand the base film increases, so that the load on the device increases, and sufficient expansion may not be possible to divide the wafer or the adhesive layer 13. It is important to adjust. The lower limit of the content ratio of the styrene-butadiene copolymer in the mixed resin composition is preferably 10% by weight or more, and it is easy to adjust the rigidity of the base film suitable for the apparatus. When the upper limit is 70% by weight or less, it is excellent in that thickness unevenness can be suppressed, and 50% by weight or less is more preferable.

In addition, in the example shown in FIG. 1, the base film 11 is a single layer, but is not limited to this, and may be a multi-layer structure in which two or more kinds of resins are laminated, or one type of resin may be laminated in two or more layers. . Two or more kinds of resins are preferable from the viewpoint of enhancing and expressing each property when it is unified whether crosslinking property or non-crosslinking property, and in the case of laminating a combination of crosslinking property or non-crosslinking property, each defect is compensated for. desirable. Although the thickness of the base film 11 is not specifically defined, it is sufficient that it is easy to stretch in the expand process of the tape 10 for semiconductor processing and has sufficient strength so as not to break. For example, about 50 to 300 µm is preferable, and 70 µm to 200 µm is more preferable.

As a method for manufacturing the multi-layered base film 11, a conventionally known extrusion method, a lamination method, or the like can be used. When using the lamination method, an adhesive may be interposed between the layers. As the adhesive, a conventionally known adhesive can be used.

<Adhesive layer>

The pressure-sensitive adhesive layer 12 can be formed by coating the pressure-sensitive adhesive composition on the base film 11. The pressure-sensitive adhesive layer 12 constituting the tape 10 for semiconductor processing of the present invention does not cause peeling with the adhesive layer 13 at the time of dicing, and retains the degree of not causing defects such as chip scattering. , It should just have the property that peeling with the adhesive layer 13 becomes easy at the time of pick-up.

In the tape 10 for semiconductor processing of the present invention, the structure of the pressure-sensitive adhesive composition constituting the pressure-sensitive adhesive layer 12 is not particularly limited, but in order to improve the pick-up property after dicing, it is preferable that it is energy ray curable, and after curing It is preferably a material that facilitates peeling from the adhesive layer 13. In one aspect, in the pressure-sensitive adhesive composition, an energy ray-curable carbon-carbon double bond containing 60 mol% or more of (meth) acrylate having an alkyl chain having 6 to 12 carbon atoms as a base resin and having an iodine of 5 to 30 It is exemplified to have a polymer (A) having a. In addition, here, an energy ray means ionizing radiation, such as a ray | beam, such as ultraviolet rays, or an electron beam.

In such a polymer (A), when the amount of the energy ray-curable carbon-carbon double bond introduced is iodine number 5 or more, it is excellent in that the effect of reducing the adhesive force after irradiation with energy rays increases. More preferably, it is 10 or more. Further, if the iodine is 30 or less, it is excellent in that it is easy to enlarge the gap of the chip when expanding immediately before the pick-up process, because the holding power of the chip from the irradiation of the energy beam to the pick-up is high. If the gap of the chip can be sufficiently enlarged before the pick-up process, image recognition of each chip at the time of pick-up is facilitated, or pick-up becomes easy, which is preferable. Moreover, since the introduction amount of a carbon-carbon double bond is iodine number 5 or more and 30 or less, it is preferable because the polymer (A) itself has stability and ease of manufacture.

Moreover, the polymer (A) is excellent in heat resistance to heat accompanying energy ray irradiation when the glass transition temperature is -70 ° C or higher, and more preferably -66 ° C or higher. Moreover, if it is 15 degrees C or less, it is excellent in the point of the scattering prevention effect of the chip after dicing in a wafer with a rough surface, More preferably, it is 0 degrees C or less, More preferably, it is -28 degrees C or less.

Although the above-mentioned polymer (A) may be prepared, for example, it is obtained by mixing an acrylic copolymer and a compound having an energy ray-curable carbon-carbon double bond, or an acrylic copolymer having a functional group or methacrylic having a functional group What is obtained by reacting the system copolymer (A1) with a compound (A2) having a functional group capable of reacting with the functional group and having an energy ray-curable carbon-carbon double bond is used.

Among these, as the methacryl-based copolymer (A1) having the above-described functional group, a monomer (A1-1) having a carbon-carbon double bond, such as an acrylic acid alkyl ester or an alkyl methacrylate ester, and a carbon-carbon double bond are used. What is obtained by co-polymerizing the monomer (A1-2) which has a functional group further has is illustrated. As the monomer (A1-1), hexyl acrylate, n-octyl acrylate, isooctyl acrylate, 2-ethylhexyl acrylate, dodecyl acrylate, decyl acrylate, d having an alkyl chain having 6 to 12 carbon atoms, d Pentyl acrylate, n-butyl acrylate, isobutyl acrylate, ethyl acrylate, methyl acrylate, or a methacrylate similar to these, which are monomers having 5 or less carbon atoms in the uryl acrylate or alkyl chain. have.

In addition, in the monomer (A1-1), a component having 6 or more carbon atoms in the alkyl chain is excellent in pick-up properties because the peeling force between the pressure-sensitive adhesive layer and the adhesive layer can be reduced. Moreover, the component of 12 or less has low elastic modulus at room temperature, and is excellent in the adhesive force of the interface of an adhesive layer and an adhesive layer. When the adhesive force at the interface between the pressure-sensitive adhesive layer and the adhesive layer is high, when the tape is expanded and the wafer is cut, interface misalignment between the pressure-sensitive adhesive layer and the adhesive layer can be suppressed, which is preferable because the cutability is improved.

Moreover, as a monomer (A1-1), the glass transition temperature is lowered, so that a monomer having a large number of carbon atoms in the alkyl chain is used, and by appropriate selection, an adhesive composition having a desired glass transition temperature can be prepared. In addition, in addition to the glass transition temperature, it is also possible to blend low-molecular compounds having carbon-carbon double bonds such as vinyl acetate, styrene, and acrylonitrile for the purpose of increasing various performances such as compatibility. In this case, these low-molecular compounds should be blended within a range of 5% by mass or less of the total mass of the monomer (A1-1).

On the other hand, examples of the functional group of the monomer (A1-2) include a carboxyl group, a hydroxyl group, an amino group, a cyclic acid anhydride group, an epoxy group, and an isocyanate group, and specific examples of the monomer (A1-2) include acrylic acid, methacrylic acid, and leucine. Nam acid, itaconic acid, fumaric acid, phthalic acid, 2-hydroxyalkyl acrylates, 2-hydroxyalkyl methacrylates, glycol monoacrylates, glycol monomethacrylates, N-methylolacrylamide, N- Methylolmethacrylamide, allyl alcohol, N-alkylaminoethyl acrylates, N-alkylaminoethyl methacrylates, acrylamides, methacrylamides, maleic anhydride, itaconic anhydride, fumaric anhydride, phthalic anhydride , Glycidyl acrylate, glycidyl methacrylate, allyl glycidyl ether, and the like.

In addition, as the functional group used in the compound (A2), when the functional group of the compound (A1) is a carboxyl group or a cyclic acid anhydride group, a hydroxyl group, an epoxy group, an isocyanate group, etc. may be mentioned. An acid anhydride group, an isocyanate group, etc. are mentioned, In the case of an amino group, an epoxy group, an isocyanate group, etc. are mentioned, In the case of an epoxy group, a carboxyl group, a cyclic acid anhydride group, an amino group etc. are mentioned, As a specific example, a monomer (A1 The thing similar to what was enumerated in the specific example of -2) can be enumerated. Further, as the compound (A2), one obtained by urethanizing a part of the isocyanate group of the polyisocyanate compound with a monomer having a hydroxyl group or a carboxyl group and an energy ray-curable carbon-carbon double bond may be used.

In addition, in the reaction between the compound (A1) and the compound (A2), by leaving an unreacted functional group, desired properties can be produced, such as acid value or hydroxyl value. If the OH group is left so that the hydroxyl value of the polymer (A) is 5 to 100, the risk of pickup miss can be further reduced by reducing the adhesive force after energy ray irradiation. Moreover, if the COOH group is left so that the acid value of the polymer (A) is 0.5 to 30, an improvement effect after restoration of the pressure-sensitive adhesive layer after expanding the tape for semiconductor processing of the present invention is obtained, which is preferable. When the hydroxyl value of the polymer (A) is 5 or more, it is excellent in terms of the effect of reducing the adhesive strength after irradiation with energy rays, and when it is 100 or less, it is excellent in the fluidity of the pressure-sensitive adhesive after irradiation with energy rays. Moreover, if the acid value is 0.5 or more, it is excellent in terms of tape recovery property, and if it is 30 or less, it is excellent in terms of fluidity of the pressure-sensitive adhesive.

In the synthesis of the polymer (A), ketone-based, ester-based, alcohol-based, and aromatic-based ones can be used as the organic solvent when the reaction is performed by solution polymerization. Among them, toluene, ethyl acetate, and isopropyl alcohol , Benzene methyl cellosolve, ethyl cellosolve, acetone, methyl ethyl ketone, etc., are generally good solvents for acrylic polymers, solvents having a boiling point of 60 to 120 ° C are preferred, and α, α'-azo as the polymerization initiator Radical generators such as azobis-based bisisobutylnitrile and organic peroxide-based benzoyl peroxide are usually used. At this time, a catalyst and a polymerization inhibitor can be used in combination as necessary, and by controlling the polymerization temperature and polymerization time, a polymer (A) having a desired molecular weight can be obtained. In addition, it is preferable to use a mercaptan or a carbon tetrachloride-based solvent for adjusting the molecular weight. In addition, this reaction is not limited to solution polymerization, and other methods such as bulk polymerization and suspension polymerization may be used.

Although the polymer (A) can be obtained as described above, in the present invention, it is excellent in that the cohesive force can be increased when the molecular weight of the polymer (A) is 300,000 or more. When the cohesive force is high, it has an effect of suppressing misalignment at the interface with the adhesive layer at the time of expansion, and it is preferable from the viewpoint of improving the dividing property of the adhesive layer since it is easy to propagate the tensile force to the adhesive layer. When the molecular weight of the polymer (A) is 2 million or less, it is excellent in terms of suppressing gelation during synthesis and coating. In addition, the molecular weight in this invention is the mass average molecular weight of polystyrene conversion.

Moreover, in the tape 10 for semiconductor processing of this invention, the resin composition which comprises the adhesive layer 12 may have the compound (B) which acts as a crosslinking agent in addition to the polymer (A). For example, polyisocyanates, a melamine-formaldehyde resin, and an epoxy resin are mentioned, These can be used individually or in combination of 2 or more types. The compound (B) reacts with the polymer (A) or the base film, and the resulting crosslinking structure can improve the cohesive force of the pressure-sensitive adhesive containing polymers (A) and (B) as the main component after coating the pressure-sensitive adhesive composition.

The polyisocyanates are not particularly limited, for example, 4,4'-diphenylmethane diisocyanate, tolylene diisocyanate, xylylene diisocyanate, 4,4'-diphenyl ether diisocyanate, 4,4 '-[ Aromatic isocyanates such as 2,2-bis (4-phenoxyphenyl) propane] diisocyanate, hexamethylene diisocyanate, 2,2,4-trimethyl-hexamethylene diisocyanate, isophorone diisocyanate, 4,4'-dicy Chlorhexylmethane diisocyanate, 2,4'-dicyclohexylmethane diisocyanate, lysine diisocyanate, lysine triisocyanate, and the like; specifically, coronate L (made by Nippon Polyurethane Co., Ltd., trade name), etc. Can be used. As a melamine-formaldehyde resin, specifically, Nikalac MX-45 (made by Sanwa Chemical Co., Ltd., brand name), Melan (made by Hitachi Kasei High School Co., Ltd., brand name), etc. can be used. As an epoxy resin, TETRADX (made by Mitsubishi Chemical Corporation, brand name) etc. can be used. In the present invention, it is particularly preferable to use polyisocyanates.

The pressure-sensitive adhesive layer in which the amount of the compound (B) added is 0.1 parts by mass or more with respect to 100 parts by mass of the polymer (A) is excellent in terms of cohesion. More preferably, it is 0.5 part by mass or more. In addition, the pressure-sensitive adhesive layer having 10 parts by mass or less is excellent in terms of suppressing rapid gelation at the time of coating, so that workability such as mixing and application of the pressure-sensitive adhesive becomes good. More preferably, it is 5 parts by mass or less.

Moreover, in this invention, the photopolymerization initiator (C) may be contained in the adhesive layer 12. There is no restriction | limiting in particular in the photoinitiator (C) contained in the adhesive layer 12, A conventionally well-known thing can be used. For example, benzophenones, such as benzophenone, 4,4'-dimethylaminobenzophenone, 4,4'-diethylaminobenzophenone, 4,4'-dichlorobenzophenone, acetophenone, diethoxy acetophenone, etc. Acetophenones, 2-ethylanthraquinone, t-butyl anthraquinone, and other anthraquinones, 2-chlorothioxanthone, benzoinethyl ether, benzoin isopropyl ether, benzyl, 2,4,5-triaryl Imidazole dimers (roffin dimers), acridine compounds, and the like, and these may be used alone or in combination of two or more. As an addition amount of photoinitiator (C), it is preferable to mix 0.1 mass part or more with respect to 100 mass parts of polymer (A), and 0.5 mass part or more is more preferable. Moreover, the upper limit is preferably 10 parts by mass or less, and more preferably 5 parts by mass or less.

In addition, the energy ray-curable pressure-sensitive adhesive used in the present invention can be blended with a tackifier, a pressure-sensitive adhesive, a surfactant, or other modifiers as necessary. Moreover, you may add an inorganic compound filler suitably.

The pressure-sensitive adhesive layer 12 can be formed using a conventional method of forming a pressure-sensitive adhesive layer. For example, a method for forming the pressure-sensitive adhesive composition by applying it to a predetermined surface of the base film 11, or the pressure-sensitive adhesive composition on a separator (for example, a plastic film or sheet coated with a release agent) After applying and forming the pressure-sensitive adhesive layer 12, the pressure-sensitive adhesive layer 12 can be formed on the base film 11 by a method of transferring the pressure-sensitive adhesive layer 12 to a predetermined surface of the substrate. Further, the pressure-sensitive adhesive layer 12 may have a single layer form or may have a stacked form.

The thickness of the pressure-sensitive adhesive layer 12 is not particularly limited, but when the thickness is 2 µm or more, it is excellent in terms of tacking force, and more preferably 5 µm or more. When it is 15 micrometers or less, it is excellent in pick-up property, and 10 micrometers or less is more preferable.

The adhesive tape 15 is the total of the differential value of the thermal strain at every 1 ° C between 40 ° C and 80 ° C measured at elevated temperature by a thermomechanical property tester in the MD (Machine Direction) direction, and TD (Transverse) Direction) The sum of the sum of the derivatives of the differential values of the thermal strain every 1 ° C between 40 ° C and 80 ° C measured at the temperature rise by the thermomechanical property tester in the direction is a negative value, that is, less than zero. The MD direction is a flow direction during film formation, and the TD direction is a direction perpendicular to the MD direction.

Thermomechanical properties in the MD direction of the adhesive tape 15 The sum of the differential values of the thermal strain at every 1 ° C between 40 ° C and 80 ° C measured at elevated temperature and the thermomechanical properties in the TD direction By setting the sum of the sum of the differential values of the thermal strain of every 1 ° C between 40 ° C and 80 ° C measured at the time of heating by the tester as a negative value, the tape 10 for semiconductor processing can be shrunk by low-temperature and short-time heating. have. Therefore, even when a method of heat shrinking by circulating a pair of warm air nozzles on a portion where the tape 10 for semiconductor processing occurs is reduced, the heat is not shrunk many times while reducing the amount of expansion, and the short time is applied to the expansion. By removing the relaxation caused by it, it is possible to maintain an appropriate cuff width.

The thermal strain can be calculated from the following formula (1) by measuring the amount of strain due to temperature according to JIS K7197: 2012.

In addition, the deformation amount indicates the direction of expansion of the sample as positive and the direction of contraction as negative.

The sum of the differential values of the thermal strain is equivalent to the area in the MD direction curve or the TD direction curve and the x-axis in Fig. 9, and the sum of the differential values in the MD direction and the derivative in the TD direction. The sum of the sum of the values becomes the sum of the areas including the sign. Therefore, that the sum is a negative value means that the adhesive tape generally exhibits shrinkage behavior between 40 ° C and 80 ° C. In order to make the sum of the sum of the derivatives in the MD direction and the sum of the derivatives in the TD direction a negative value, a step of stretching after forming a resin film is added, and the adhesive tape 15 is constituted. Depending on the type of resin, the thickness of the adhesive tape 15 or the stretching amount in the MD direction or the TD direction may be adjusted. Examples of the method of stretching the adhesive tape in the TD direction include a tenter method, a method by blow molding (inflation), a method of using an expand roll, etc., and a method of stretching in the MD direction, when ejecting a mold And a method of tensioning in a conveying roll, a method of tensioning. Any method may be used as a method for obtaining the adhesive tape 15 of the present invention.

<Adhesive layer>

In the tape 10 for semiconductor processing of the present invention, the adhesive layer 13 is peeled from the pressure-sensitive adhesive layer 12 and adhered to the chip when the wafer is bonded and diced and then picked up the chip. And it is used as an adhesive when fixing a chip to a substrate or a lead frame.

Although the adhesive layer 13 is not specifically limited, What is necessary is just a film adhesive normally used for a wafer, For example, what contains a thermoplastic resin and a thermopolymerizable component is mentioned. The thermoplastic resin used in the adhesive layer 13 of the present invention is preferably a resin having a thermoplastic or a resin having a thermoplastic in an uncured state and forming a crosslinked structure after heating, and is not particularly limited, but one aspect Examples of the resin include thermoplastic resins having a weight average molecular weight of 5000 to 200,000 and a glass transition temperature of 0 to 150 ° C. Moreover, as another aspect, the thermoplastic resin whose weight average molecular weight is 100,000-1,000,000 and the glass transition temperature is -50-20 degreeC is mentioned.

As the former thermoplastic resin, for example, polyimide resin, polyamide resin, polyetherimide resin, polyamideimide resin, polyester resin, polyesterimide resin, phenoxy resin, polysulfone resin, polyethersulfone resin, poly And phenylene sulfide resins and polyether ketone resins. Among them, it is preferable to use a polyimide resin or a phenoxy resin, and the latter thermoplastic resin is preferably a polymer containing a functional group.

The polyimide resin can be obtained by condensation reaction of tetracarboxylic dianhydride and diamine by a known method. That is, in an organic solvent, tetracarboxylic dianhydride and diamine are used in equimolar or almost equimolar form (the order of adding each component is arbitrary), and the reaction is performed at 80 ° C or lower, preferably 0 to 60 ° C. As the reaction proceeds, the viscosity of the reaction solution gradually increases, and polyamic acid, which is a precursor of polyimide, is generated. The molecular weight can also be adjusted by heating and depolymerizing the polyamic acid at a temperature of 50 to 80 ° C. The polyimide resin can be obtained by dehydrating and closing the reactant (polyamic acid). The dehydration cyclization can be performed by a heat cyclization method using a heat treatment and a chemical cyclization method using a dehydrating agent.

The tetracarboxylic dianhydride that can be used as a raw material for the polyimide resin is not particularly limited, and for example, 1,2- (ethylene) bis (trimellitate anhydride), 1,3- (trimethylene) bis (tri Mellitate anhydride), 1,4- (tetramethylene) bis (trimellitate anhydride), 1,5- (pentamethylene) bis (trimellitate anhydride), 1,6- (hexamethylene) bis (trimellitate) Anhydride), 1,7- (heptamethylene) bis (trimellitate anhydride), 1,8- (octamethylene) bis (trimellitate anhydride), 1,9- (nonamethylene) bis (trimellitate anhydride) , 1,10- (decamethylene) bis (trimellitate anhydride), 1,12- (dodecamethylene) bis (trimellitate anhydride), 1,16- (hexadecamethylene) bis (trimellitate anhydride) , 1,18- (octadecamethylene) bis (trimellitate anhydride), pyromellitic anhydride, 3,3 ', 4,4'-biphenyltetracarboxylic dianhydride, 2,2', 3 , 3'-biphenyltetracarboxylic dianhydride, 2,2-bis (3,4-dicarboxyphenyl) propane 2 anhydride, 2,2-bis (2,3-dicarboxyphenyl) propane 2 anhydride, 1 , 1-bis (2,3-dicarboxyphenyl) ethane anhydride, 1,1-bis (3,4-dicarboxyphenyl) ethane anhydride, bis (2,3-dicarboxyphenyl) methane 2 anhydride, bis (3,4-dicarboxyphenyl) methane dianhydride, bis (3,4-dicarboxyphenyl) sulfone anhydride, 3,4,9,10-perylenetetracarboxylic dianhydride, bis (3,4- Dicarboxyphenyl) ether 2 anhydride, benzene-1,2,3,4-tetracarboxylic acid anhydride, 3,4,3 ', 4'-benzophenonetetracarboxylic acid anhydride, 2,3,2' , 3'-benzophenonetetracarboxylic dianhydride, 3,3,3 ', 4'-benzophenonetetracarboxylic dianhydride, 1,2,5,6-naphthalenetetracarboxylic dianhydride, 1, 4,5,8-naphthalenetetracarboxylic dianhydride, 2,3,6,7-naphthalenetetracarboxylic dianhydride, 1,2,4,5-naphthalenetetracarboxylic dianhydride , 2,6-dichloronaphthalene-1,4,5,8-tetracarboxylic dianhydride, 2,7-dichloronaphthalene-1,4,5,8-tetracarboxylic dianhydride, 2,3,6 , 7-tetrachloronaphthalene-1,4,5,8-tetracarboxylic dianhydride, phenanthrene-1,8,9,10-tetracarboxylic dianhydride, pyrazine-2,3,5,6- Tetracarboxylic dianhydride, thiophene-2,3,5,6-tetracarboxylic dianhydride, 2,3,3 ', 4'-biphenyltetracarboxylic dianhydride, 3,4,3' , 4'-biphenyltetracarboxylic dianhydride, 2,3,2 ', 3'-biphenyltetracarboxylic dianhydride, bis (3,4-dicarboxyphenyl) dimethylsilane 2 anhydride, bis (3 , 4-dicarboxyphenyl) methylphenylsilane 2 anhydride, bis (3,4-dicarboxyphenyl) diphenylsilane 2 anhydride, 1,4-bis (3,4-dicarboxyphenyldimethylsilyl) benzene 2 anhydride, 1, 3-bis (3,4-dicarboxyphenyl) -1,1,3,3-tetramethyldicyclohexane dianhydride, p-phenylenebis (trimellitate anhydride), ethylenetetracarboxy Diacid anhydride, 1,2,3,4-butanetetracarboxylic dianhydride, decahydronaphthalene-1,4,5,8-tetracarboxylic dianhydride, 4,8-dimethyl-1,2,3 , 5,6,7-hexahydronaphthalene-1,2,5,6-tetracarboxylic dianhydride, cyclopentane-1,2,3,4-tetracarboxylic dianhydride, pyrrolidine-2, 3,4,5-tetracarboxylic dianhydride, 1,2,3,4-cyclobutanetetracarboxylic dianhydride, bis (exo-bicyclo [2,2,1] heptane-2,3-dica Leic acid anhydride, bicyclo- [2,2,2] -oct-7-ene-2,3,5,6-tetracarboxylic acid anhydride, 2,2-bis (3,4-dicarboxy Phenyl) hexafluoropropane 2 dianhydride, 2,2-bis [4- (3,4-dicarboxyphenyl) phenyl] hexafluoropropane 2 anhydride, 4,4'-bis (3,4-dicarboxyphenoxy ) Diphenylsulfide anhydride, 1,4-bis (2-hydroxyhexafluoroisopropyl) benzenebis (trimellitic anhydride), 1,3-bis (2-hydroxyhexafluoroisopropyl) benzene Bis ( Rimelitic anhydride), 5- (2,5-dioxotetrahydropril) -3-methyl-3-cyclohexene-1,2-dicarboxylic acid anhydride, tetrahydrofuran-2,3,4, 5-tetracarboxylic dianhydride, etc. can be used, and 1 type, or 2 or more types of these can also be used together.

Moreover, there is no restriction | limiting in particular as diamine which can be used as a raw material of a polyimide, For example, o-phenylenediamine, m-phenylenediamine, p-phenylenediamine, 3,3'-diaminodiphenyl ether, 3 , 4'-diaminodiphenyl ether, 4,4'-diaminodiphenyl ether, 3,3'-diaminodiphenylmethane, 3,4'-diaminodiphenylmethane, 4,4'-diamino Diphenylethermethane, bis (4-amino-3,5-dimethylphenyl) methane, bis (4-amino-3,5-diisopropylphenyl) methane, 3,3'-diaminodiphenyldifluoro Methane, 3,4'-diaminodiphenyldifluoromethane, 4,4'-diaminodiphenyldifluoromethane, 3,3'-diaminodiphenylsulfone, 3,4'-diaminodiphenyl Sulfone, 4,4'-diaminodiphenylsulfone, 3,3'-diaminodiphenylsulfide, 3,4'-diaminodiphenylsulfide, 4,4'-diaminodiphenylsulfide, 3 , 3'-diaminodiphenylketone, 3,4'-diaminodiphenylketone, 4,4'-diaminodiphenylketone, 2,2-bis (3-aminophen Neil) propane, 2,2 '-(3,4'-diaminodiphenyl) propane, 2,2-bis (4-aminophenyl) propane, 2,2-bis (3-aminophenyl) hexafluoropropane , 2,2- (3,4'-diaminodiphenyl) hexafluoropropane, 2,2-bis (4-aminophenyl) hexafluoropropane, 1,3-bis (3-aminophenoxy) benzene , 1,4-bis (3-aminophenoxy) benzene, 1,4-bis (4-aminophenoxy) benzene, 3,3 '-(1,4-phenylenebis (1-methylethylidene) ) Bisaniline, 3,4 '-(1,4-phenylenebis (1-methylethylidene)) bisaniline, 4,4'-(1,4-phenylenebis (1-methylethylidene) ) Bisaniline, 2,2-bis (4- (3-aminophenoxy) phenyl) propane, 2,2-bis (4- (4-aminophenoxy) phenyl) propane, 2,2-bis (4- (3-aminophenoxy) phenyl) hexafluoropropane, 2,2-bis (4- (4-aminophenoxy) phenyl) hexafluoropropane, bis (4- (3-aminophenoxy) phenyl) sulfide FEED, bis (4- (4-aminophenoxy) phenyl) sulfide, bis (4- (3-aminophenoxy) phenyl) sulfone, bis (4- (4-ah Nophenoxy) phenyl) sulfone, aromatic diamines such as 3,5-diaminobenzoic acid, 1,2-diaminoethane, 1,3-diaminopropane, 1,4-diaminobutane, 1,5-diaminophen Tan, 1,6-diaminohexane, 1,7-diaminoheptane, 1,8-diaminooctane, 1,9-diaminononane, 1,10-diaminodecane, 1,11-diaminounde Can, 1,12-diaminododecane, 1,2-diaminocyclohexane, diaminopolysiloxane represented by the following Chemical Formula 1, 1,3-bis (aminomethyl) cyclohexane, manufactured by Sun Techno Chemical Co., Ltd. Aliphatic diamines such as polyoxyalkylene diamines such as Famine D-230, D-400, D-2000, D-4000, ED-600, ED-900, ED-2001, and EDR-148 can be used, and these You may use together 1 type (s) or 2 or more types. It is preferable that it is 0-200 degreeC as glass transition temperature of the said polyimide resin, and it is preferable that it is 10,000-20 million as a weight average molecular weight.

(Wherein, R1 and R2 represent a divalent hydrocarbon group having 1 to 30 carbon atoms, each may be the same or different, R3 and R4 represent a monovalent hydrocarbon group, each may be the same or different, and m is an integer of 1 or more. )

The phenoxy resin, which is one of the preferred thermoplastic resins other than the above, is preferably a resin obtained by a method of reacting various bisphenols with epichlorohydrin, or a method of reacting a liquid epoxy resin with bisphenols. And bisphenol bisphenol AF, bisphenol AD, bisphenol F, and bisphenol S. Since the phenoxy resin has a similar structure to the epoxy resin, it has good compatibility with the epoxy resin and is suitable for imparting good adhesion to the adhesive film.

As a phenoxy resin used by this invention, the resin which has a repeating unit represented by following formula (2) is mentioned, for example.

In the formula (2), X represents a single bond or a divalent linking group. Examples of the divalent linking group include an alkylene group, a phenylene group, -O-, -S-, -SO- or -SO _2- . Here, the alkylene group is preferably an alkylene group having 1 to 10 carbon atoms, and more preferably -C (R1) (R2)-. R1 and R2 represent a hydrogen atom or an alkyl group, and as the alkyl group, a linear or branched alkyl group having 1 to 8 carbon atoms is preferable, for example, methyl, ethyl, n-propyl, isopropyl, isooctyl, 2-ethylhexyl, And 1,3,3-trimethylbutyl. Moreover, the said alkyl group may be substituted by the halogen atom, and the trifluoromethyl group is mentioned, for example. X is preferably an alkylene group, -O-, -S-, fluorene group or -SO _2- , more preferably an alkylene group, -SO _2- . Especially, -C (CH ₃ ) _2- , -CH (CH ₃ )-, -CH _2- , -SO ₂ -are preferable, -C (CH ₃ ) _2- , -CH (CH ₃ )-, -CH ₂ -is more preferable, and -C (CH ₃ ) ₂ -is particularly preferable.

If the phenoxy resin represented by the formula (2) has a repeating unit, even if the resin of the formula (2) has a plurality of different repeating units, X may contain only the same repeating unit. In the present invention, resins in which X contains only the same repeating unit are preferred.

In addition, when the phenoxy resin represented by the formula (2) contains a polar substituent such as a hydroxyl group or a carboxyl group, compatibility with a thermopolymerizable component is improved, and uniform appearance and characteristics can be imparted.

When the mass average molecular weight of the phenoxy resin is 5000 or more, it is excellent in terms of film formability. It is more preferably 10,000 or more, and still more preferably 30,000 or more. Moreover, if the mass average molecular weight is 150,000 or less, it is preferable from the viewpoint of fluidity at the time of heat pressing and compatibility with other resins. More preferably, it is 100,000 or less. Moreover, when a glass transition temperature is -50 degreeC or more, it is excellent in the film formability, More preferably, it is 0 degreeC or more, More preferably, it is 50 degreeC or more. When the glass transition temperature is 150 ° C, the adhesive force of the adhesive layer 13 at the time of die bonding is excellent, more preferably 120 ° C or less, and even more preferably 110 ° C or less.

On the other hand, examples of the functional group in the polymer containing the functional group include glycidyl group, acryloyl group, methacryloyl group, hydroxyl group, carboxyl group, isocyanurate group, amino group, amide group, and the like. Among them, a glycidyl group is preferred.

As a high molecular weight component containing the said functional group, (meth) acryl copolymer etc. which contain functional groups, such as a glycidyl group, a hydroxyl group, and a carboxyl group, are mentioned, for example.

As said (meth) acrylic copolymer, (meth) acrylic ester copolymer, acrylic rubber, etc. can be used, for example, and acrylic rubber is preferable. The acrylic rubber is a rubber containing acrylic acid ester as a main component and mainly containing copolymers such as butyl acrylate and acrylonitrile and copolymers such as ethyl acrylate and acrylonitrile.

When the glycidyl group is contained as the functional group, the amount of the glycidyl group-containing repeating unit is preferably 0.5 to 6.0% by weight, more preferably 0.5 to 5.0% by weight, and particularly preferably 0.8 to 5.0% by weight. The glycidyl group-containing repeating unit is a constituent monomer of the (meth) acrylic copolymer containing a glycidyl group, and specifically, glycidyl acrylate or glycidyl methacrylate. When the amount of the glycidyl group-containing repeating unit is in this range, adhesion can be ensured and gelation can be prevented.

As a constituent monomer of the said (meth) acrylic copolymer other than glycidyl acrylate and glycidyl methacrylate, ethyl (meth) acrylate, butyl (meth) acrylate, etc. are mentioned, for example, These, It may be used alone or in combination of two or more. In addition, in this invention, ethyl (meth) acrylate represents ethyl acrylate and / or ethyl methacrylate. The mixing ratio when a functional monomer is used in combination may be determined in consideration of the glass transition temperature of the (meth) acrylic copolymer. When the glass transition temperature is set to -50 ° C or higher, it is preferable from the viewpoint of excellent film formability and suppressing excessive tagging at room temperature. If the tack force at room temperature is excessive, handling of the adhesive layer becomes difficult. It is more preferably -20 ° C or higher, and still more preferably 0 ° C or higher. Moreover, when the glass transition temperature is 30 ° C or less, it is excellent in terms of the adhesive strength of the adhesive layer during die bonding, and more preferably 20 ° C or less.

When the monomer is polymerized to produce a high molecular weight component containing a functional monomer, the polymerization method is not particularly limited. For example, a method such as pearl polymerization or solution polymerization can be used, and among them, pearl polymerization desirable.

In the present invention, if the weight average molecular weight of the high molecular weight component containing the functional monomer is 100,000 or more, it is excellent in terms of film formability, more preferably 200,000 or more, still more preferably 500,000 or more. Further, when the weight average molecular weight is adjusted to 2,000,000 or less, it is excellent in that the heating fluidity of the adhesive layer during die bonding is improved. When the heating fluidity of the adhesive layer at the time of die bonding is improved, adhesion between the adhesive layer and the adherend is improved, adhesion can be improved, and voids are easily suppressed by filling the irregularities of the adherend. More preferably, it is 1,000,000 or less, more preferably 800,000 or less, and if it is 500,000 or less, a greater effect can be obtained.

In addition, the thermally polymerizable component is not particularly limited as long as it is polymerized by heat. For example, functional groups such as glycidyl group, acryloyl group, methacryloyl group, hydroxyl group, carboxyl group, isocyanurate group, amino group, amide group, etc. A compound having a trigger and a trigger material may be used. These may be used alone or in combination of two or more, but considering the heat resistance as an adhesive layer, a thermosetting resin cured by heat and exerting an adhesive action may be used as a curing agent and accelerator. It is preferable to contain it together. Examples of the thermosetting resin include epoxy resins, acrylic resins, silicone resins, phenolic resins, thermosetting polyimide resins, polyurethane resins, melamine resins, urea resins, etc., and particularly adhesives having excellent heat resistance, workability and reliability. It is most preferable to use an epoxy resin in that a layer is obtained.

The above-mentioned epoxy resin is not particularly limited as long as it is cured and has an adhesive action, and bifunctional epoxy resins such as bisphenol A-type epoxy, novolac-type epoxy resins such as phenol novolac-type epoxy resins and cresol novolac-type epoxy resins, etc. Can be used. Moreover, what is generally known, such as a polyfunctional epoxy resin, a glycidylamine type epoxy resin, a heterocyclic epoxy resin, or an alicyclic epoxy resin, can be used.

As said bisphenol A type epoxy resin, Mitsubishi Chemical Co., Ltd. Epicoat series (Epicoat 807, Epicoat 815, Epicoat 825, Epicoat 827, Epicoat 828, Epicoat 834, Epicoat 1001, Epicoat 1004, Epicoat 1007, Epicoat 1009), manufactured by Dow Chemical, DER-330, DER-301, DER-361 and Shinnitetsu Sumkin Chemical Co., Ltd., YD8125, YDF8170. Examples of the phenol novolak-type epoxy resins include Mitsubishi Chemical Co., Ltd. Epicoat 152, Epicoat 154, Nippon Kayaku Co., Ltd. EPPN-201, Dow Chemical Co., Ltd. DEN-438, and the like. As o-cresol novolak-type epoxy resins, EOCN-102S, EOCN-103S, EOCN-104S, EOCN-1012, EOCN-1025, EOCN-1027 manufactured by Nippon Kayaku Co., Ltd., and Shinnitetsu Sumikin Chemical Co., Ltd. And YDCN701, YDCN702, YDCN703, YDCN704, etc., from Kabushiki Kaisha. Examples of the polyfunctional epoxy resin include Epon1031S manufactured by Mitsubishi Chemical Corporation, Araldite 0163 manufactured by Ciba Specialty Chemicals, and Denacol EX-611, EX-614, and EX-614B manufactured by Nagase Chemtex Corporation. , EX-622, EX-512, EX-521, EX-421, EX-411, EX-321, and the like. As said amine type epoxy resin, Mitsubishi Chemical Co., Ltd. Epicoat 604, Toto Kasei Chemical Co., Ltd. YH-434, Mitsubishi Gas Chemical Co., Ltd. TETRAD-X and TETRAD-C, Sumitomo Chemical Co., Ltd. ELM-120 manufactured by Kyu Kogyo Co., Ltd., and the like. Examples of the heterocyclic-containing epoxy resin include Aralite PT810 manufactured by Ciba Specialty Chemicals, ERL4234, ERL4299, ERL4221, and ERL4206 manufactured by UCC. These epoxy resins can be used alone or in combination of two or more.

In order to cure the thermosetting resin, an additive may be appropriately added. As such an additive, a hardening agent, a hardening accelerator, a catalyst, etc. are mentioned, for example, When adding a catalyst, a cocatalyst can be used as needed.

When using an epoxy resin for the said thermosetting resin, it is preferable to use an epoxy resin hardener or hardening accelerator, and it is more preferable to use these together. As the curing agent, for example, phenol resin, dicyandiamide, boron trifluoride complex, organic hydrazide compound, amines, polyamide resin, imidazole compound, urea or thiourea compound, polymercaptan compound, poly having mercapto group at the end And sulfide resins, acid anhydrides, and light / ultraviolet curing agents. These may be used alone or in combination of two or more.

Among these, boron trifluoride complex compounds include boron trifluoride-amine complexes with various amine compounds (preferably primary amine compounds), and dihydrazide isophthalate is mentioned as an organic hydrazide compound.

As the phenol resin, for example, phenol novolak resins, phenol aralkyl resins, cresol novolak resins, tert-butylphenol novolak resins, novolak type phenol resins such as nonylphenol novolak resins, resol type phenol resins, polyparas And polyoxystyrenes such as oxystyrene. Among them, phenolic compounds having at least two phenolic hydroxyl groups in the molecule are preferred.

As the phenolic compound having at least two phenolic hydroxyl groups in the molecule, for example, phenol novolak resin, cresol novolak resin, t-butylphenol novolak resin, dicyclopentadienecresol novolak Resin, dicyclopentadienephenol novolak resin, xylylene-modified phenol novolak resin, naphthol novolak resin, trisphenol novolak resin, tetrakisphenol novolak resin, bisphenol A novolak resin, poly-p-vinylphenol Resin, phenol aralkyl resin, and the like. Further, among these phenol resins, phenol novolak resins and phenol aralkyl resins are particularly preferred, and connection reliability can be improved.

As the amines, chained aliphatic amines (diethylenetriamine, triethylenetetramine, hexamethylenediamine, N, N-dimethylpropylamine, benzyldimethylamine, 2- (dimethylamino) phenol, 2,4,6-tris (dimethyl) Aminomethyl) phenol, m-xylenediamine, etc.), cyclic aliphatic amines (N-aminoethylpiperazine, bis (3-methyl-4-aminocyclohexyl) methane, bis (4-aminocyclohexyl) methane, mensendiamine, Isophoronediamine, 1,3-bis (aminomethyl) cyclohexane, etc.), heterocyclic amine (piperazine, N, N-dimethylpiperazine, triethylenediamine, melamine, guanamine, etc.), aromatic amine (metaphenylene Diamine, 4,4'-diaminodiphenylmethane, diamino, 4,4'-diaminodiphenylsulfone, etc.), polyamide resin (polyamideamine is preferred, condensate of dimer acid and polyamine), imidazole Compound (2-phenyl-4,5-dihydroxymethylimidazole, 2-methylimidazole, 2,4-dimethylimidazole, 2-n -Heptadecyl imidazole, 1-cyanoethyl-2- undecyl imidazolium trimellitate, epoxy imidazole adduct, etc.), urea or thiourea compounds (N, N-dialkylurea compounds, N , N-dialkylthiourea compounds, etc.), polymercaptan compounds, polysulfide resins having mercapto groups at the ends, acid anhydrides (such as tetrahydro phthalic anhydride), and light / ultraviolet curing agents (diphenyl iodonium hexafluorophosphate) , Triphenylsulfonium hexafluorophosphate, and the like).

The curing accelerator is not particularly limited as long as the thermosetting resin is cured. For example, imidazoles, dicyandiamide derivatives, dicarboxylic acid dihydrazide, triphenylphosphine, tetraphenylphosphoniumtetraphenylborate, 2- And ethyl-4-methylimidazole-tetraphenylborate, 1,8-diazabicyclo [5.4.0] undecene-7-tetraphenylborate, and the like.

As imidazoles, imidazole, 2-methylimidazole, 2-ethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole , 1-benzyl-2-methylimidazole, 1-benzyl-2-ethylimidazole, 1-benzyl-2-ethyl-5-methylimidazole, 2-phenyl-4-methyl-5-hydroxy And dimethylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, and the like.

The content in the adhesive layer of the curing agent or curing accelerator for epoxy resin is not particularly limited, and the optimum content varies depending on the type of curing agent or curing accelerator.

The blending ratio of the epoxy resin and the phenol resin is preferably blended such that the hydroxyl group in the phenol resin is 0.5 to 2.0 equivalents per equivalent of the epoxy group in the epoxy resin component. More preferably, it is 0.8 to 1.2 equivalent. That is, when the blending ratio of both is out of the above range, sufficient curing reaction does not proceed, and the properties of the adhesive layer are likely to deteriorate. In another embodiment, the curing agent is 0.5 to 20 parts by mass, and in another embodiment, the curing agent is 1 to 10 parts by mass with respect to 100 parts by mass of the thermosetting resin. The content of the curing accelerator is preferably less than the content of the curing agent, preferably 0.001 to 1.5 parts by mass of the curing accelerator and more preferably 0.01 to 0.95 parts by mass relative to 100 parts by mass of the thermosetting resin. By adjusting within the above range, it is possible to assist the progress of a sufficient curing reaction. The content of the catalyst is preferably 0.001 to 1.5 parts by mass, more preferably 0.01 to 1.0 parts by mass relative to 100 parts by mass of the thermosetting resin.

Moreover, the adhesive layer 13 of this invention can mix | blend a filler suitably according to the use. This improves the dicing property of the adhesive layer in an uncured state, improves handling properties, adjusts melt viscosity, imparts thixotropic properties, further imparts thermal conductivity and improves adhesion in the cured adhesive layer. It is becoming possible to plan.

As the filler used in the present invention, an inorganic filler is preferable. The inorganic filler is not particularly limited, for example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, alumina, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica , Amorphous silica, antimony oxide, and the like. Moreover, these can also be used individually or in mixture of 2 or more types.

Moreover, among the above-mentioned inorganic fillers, it is preferable to use alumina, aluminum nitride, boron nitride, crystalline silica, amorphous silica and the like from the viewpoint of improving thermal conductivity. In addition, aluminum oxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, magnesium oxide, calcium oxide, magnesium oxide, alumina, crystalline silica, amorphous silica, etc., in terms of adjusting the melt viscosity and providing thixotropic properties It is preferred to use. Moreover, it is preferable to use alumina and silica from a viewpoint of improving dicing property.

When the content ratio of the filler is 30% by mass or more, it is excellent in terms of wire bonding properties. At the time of wire bonding, it is preferable that the storage elastic modulus after curing of the adhesive layer adhering the tip for attaching the wire is adjusted to a range of 20 to 1000 MPa at 170 ° C. If the content ratio of the filler is 30 mass% or more, the adhesive layer It is easy to adjust the storage elastic modulus after hardening in this range. Moreover, when the content ratio of a filler is 75 mass% or less, it is excellent in film formability and the heat fluidity of the adhesive layer at the time of die bonding. When the heating fluidity of the adhesive layer at the time of die bonding is improved, adhesion between the adhesive layer and the adherend is improved, adhesion can be improved, and voids are easily suppressed by filling the irregularities of the adherend. It is more preferably 70% by mass or less, and even more preferably 60% by mass or less.

The adhesive layer of the present invention, as the filler, may include two or more fillers having different average particle diameters. In this case, compared to the case where a single filler is used, in the raw material mixture before film formation, it becomes easy to prevent a viscosity increase when the filler content ratio is high or a viscosity drop when the filler content ratio is low, thereby forming a good film. The properties are easily obtained, the fluidity of the uncured adhesive layer can be optimally controlled, and excellent adhesion is easily obtained after curing of the adhesive layer.

The adhesive layer of the present invention preferably has an average particle diameter of the filler of 2.0 µm or less, more preferably 1.0 µm or less. When the average particle diameter of the filler is 2.0 µm or less, thinning of the film becomes easy. Here, the thin film suggests a thickness of 20 µm or less. Moreover, if it is 0.01 micrometer or more, dispersibility is favorable.

In addition, from the viewpoint of preventing the increase or decrease in viscosity of the raw material mixture before filming, controlling the fluidity of the uncured adhesive layer optimally, and improving the adhesive strength after curing of the adhesive layer, the average particle diameter ranges from 0.1 to 1.0 µm. It is preferable to include the 1st filler within and the 2nd filler whose average particle diameter of a primary particle diameter exists in the range of 0.005 to 0.03 micrometers. The first filler having an average particle diameter in the range of 0.1 to 1.0 µm, and 99% or more particles distributed in the range of 0.1 to 1.0 µm, and the average particle diameter of the primary particle diameter in the range of 0.005 to 0.03 µm, and also 99 It is preferable that the 2nd filler which particle | grains of% or more are distributed in the range of 0.005 to 0.1 micrometer of particle diameter.

The average particle diameter in the present invention means the D50 value of the cumulative volume distribution curve in which 50% by volume of particles have a diameter smaller than this value. In the present invention, the average particle diameter or D50 value is measured by laser diffraction, for example, using Malvern Mastersizer 2000 manufactured by Malvern Instruments. In this technique, the size of the particles in the dispersion is measured using diffraction of laser beams, based on the application of either Fraunhofer or theory. In the present invention, the microscopic theory or the modified microscopic theory for non-spherical particles is used, and the average particle diameter or D50 value relates to scattering measurement at 0.02 to 135 ° with respect to the incident laser beam.

In the present invention, in one aspect, the thermoplastic resin having a weight average molecular weight of 5000 to 200,000 of 10 to 40% by mass with respect to the entire pressure-sensitive adhesive composition constituting the adhesive layer 13, and a thermally polymerizable component of 10 to 40% by mass , 30 to 75 mass% of filler may be included. In this embodiment, the content of the filler may be 30 to 60 mass%, or 40 to 60 mass%. In addition, the mass average molecular weight of the thermoplastic resin may be 5000 to 150,000, or 10,000 to 100,000.

In another embodiment, the thermoplastic resin having a weight average molecular weight of 10 to 20% by mass relative to the entire pressure-sensitive adhesive composition constituting the adhesive layer 13 is 200,000 to 2,000,000, a thermally polymerizable component of 20 to 50% by mass, and 30 to 75% by mass % Filler. In this embodiment, the content of the filler may be 30 to 60% by mass, or 30 to 50% by mass. Further, the mass average molecular weight of the thermoplastic resin may be 200,000 to 1,000,000, or 200,000 to 800,000.

By adjusting the blending ratio, the storage elastic modulus and fluidity of the adhesive layer 13 after curing can be optimized, and heat resistance at a high temperature tends to be sufficiently obtained.

In the tape 10 for semiconductor processing of the present invention, the adhesive layer 13 may be formed by directly or indirectly laminating a film previously formed (hereinafter referred to as an adhesive film) on the base film 11. . The temperature at the time of lamination is in the range of 10 to 100 ° C, and it is preferable to apply a linear pressure of 0.01 to 10 N / m. In addition, such an adhesive film may be provided with an adhesive layer 13 on the release film, in which case, the release film may be peeled after lamination, or used as a cover film of the tape 10 for semiconductor processing as it is. , When bonding the wafer, you may peel.

Although the said adhesive film may be laminated | stacked on the whole surface of the adhesive layer 12, you may laminate | stack the adhesive film cut | disconnected (precut) in the shape according to the wafer previously bonded to the adhesive layer 12. As described above, when the adhesive film according to the wafer is laminated, as shown in FIG. 3, the adhesive layer 13 is provided at the portion to which the wafer W is bonded, and the adhesive layer 13 is provided at the portion to which the ring frame 20 is bonded. ) And only the adhesive layer 12 is present. In general, since the adhesive layer 13 is difficult to peel off from the adherend, by using a precut adhesive film, the ring frame 20 can be bonded to the pressure-sensitive adhesive layer 12, and when peeling off the tape after use The effect that it is difficult for the adhesive residue to occur in the ring frame 20 is obtained.

<Use>

The tape 10 for semiconductor processing of this invention is used for the manufacturing method of the semiconductor device including the expanding process which divides the adhesive layer 13 by at least expansion. Therefore, other processes, the order of the processes, and the like are not particularly limited. For example, it can be used suitably in the manufacturing methods (A) to (E) of the following semiconductor devices.

Method for manufacturing a semiconductor device (A)

(a) a step of bonding a surface protection tape to the wafer surface on which the circuit pattern is formed,

(b) a back grind process for grinding the wafer back surface,

(c) a step of bonding the adhesive film bonded to the pressure-sensitive adhesive layer of the semiconductor processing tape on the back surface of the wafer while the wafer is heated at 70 to 80 ° C.,

(d) peeling the surface protection tape from the wafer surface,

(e) irradiating a laser beam to a portion to be segmented of the wafer to form a modified region by multiphoton absorption inside the wafer,

(f) a step of dividing the wafer and the adhesive film along a dividing line by expanding the tape for semiconductor processing, thereby obtaining a chip provided with a plurality of adhesive films;

(g) a step of heating and shrinking a portion of the tape for semiconductor processing that does not overlap with the chip to remove the relaxation generated in the expand process to maintain the gap of the chip;

(h) process of picking up the chip with the adhesive layer from the adhesive layer of the semiconductor processing tape

Method for manufacturing a semiconductor device comprising a.

The manufacturing method of this semiconductor device is a method using stealth dicing.

Method for manufacturing semiconductor device (B)

(a) a step of bonding a surface protection tape to the wafer surface on which the circuit pattern is formed,

(b) a back grind process for grinding the wafer back surface,

(c) a step of bonding the adhesive film bonded to the pressure-sensitive adhesive layer of the semiconductor processing tape on the back surface of the wafer while the wafer is heated at 70 to 80 ° C.,

(d) peeling the surface protection tape from the wafer surface,

(e) irradiating laser light from the surface of the wafer along the dividing line, and dividing it into individual chips;

(f) a step of dividing the adhesive film corresponding to the chip by expanding the tape for semiconductor processing, thereby obtaining a chip having a plurality of adhesive films;

(g) a step of heating and shrinking a portion of the tape for semiconductor processing that does not overlap with the chip to remove the relaxation generated in the expand process to maintain the gap of the chip;

(h) process of picking up the chip with the adhesive layer from the adhesive layer of the semiconductor processing tape

Method for manufacturing a semiconductor device comprising a.

The manufacturing method of this semiconductor device is a method using full-cut laser dicing.

Method for manufacturing semiconductor device (C)

(a) a step of bonding a surface protection tape to the wafer surface on which the circuit pattern is formed,

(b) a back grind process for grinding the wafer back surface,

(c) a step of bonding the adhesive film bonded to the pressure-sensitive adhesive layer of the semiconductor processing tape on the back surface of the wafer while the wafer is heated at 70 to 80 ° C.,

(d) peeling the surface protection tape from the wafer surface,

(e) cutting the wafer along a dividing line using a dicing blade, and dividing the wafer into individual chips,

(f) a step of dividing the adhesive film corresponding to the chip by expanding the tape for semiconductor processing, thereby obtaining a chip having a plurality of adhesive films;

(g) a step of heating and shrinking a portion of the tape for semiconductor processing that does not overlap with the chip to remove the relaxation generated in the expand process to maintain the gap of the chip;

(h) process of picking up the chip with the adhesive layer from the adhesive layer of the semiconductor processing tape

Method for manufacturing a semiconductor device comprising a.

The method for manufacturing the semiconductor device is a method using full-cut blade dicing.

Method for manufacturing semiconductor device (D)

(a) using a dicing blade to cut a wafer having a circuit pattern along a predetermined line of a division line to a depth less than the thickness of the wafer,

(b) bonding the surface protection tape to the wafer surface,

(c) a backgrinding process for grinding the wafer back surface,

(d) a step of bonding the adhesive film bonded to the pressure-sensitive adhesive layer of the semiconductor processing tape on the back surface of the chip while the wafer is heated at 70 to 80 ° C.,

(e) a process of peeling the surface protection tape from the wafer surface,

(f) a step of dividing the adhesive film corresponding to the chip by expanding the tape for semiconductor processing, thereby obtaining a chip having a plurality of adhesive films;

(g) a step of heating and shrinking a portion of the tape for semiconductor processing that does not overlap with the chip to remove the relaxation generated in the expand process to maintain the gap of the chip;

(h) process of picking up the chip with the adhesive layer from the adhesive layer of the semiconductor processing tape

Method for manufacturing a semiconductor device comprising a.

The manufacturing method of this semiconductor device is a method using half-cut blade dicing.

Method for manufacturing semiconductor device (E)

(a) a step of bonding a surface protection tape to the wafer surface on which the circuit pattern is formed,

(b) irradiating a laser beam to a portion to be divided of the wafer to form a modified region by multiphoton absorption inside the wafer;

(c) a backgrinding process for grinding the wafer back surface,

(d) a step of bonding the adhesive layer of the semiconductor processing tape to the back surface of the wafer while the wafer is heated to 70 to 80 ° C.,

(e) peeling the surface protection tape from the wafer surface,

(f) a step of dividing the wafer and the adhesive layer along a dividing line by expanding the tape for semiconductor processing, thereby obtaining a chip having a plurality of adhesive films;

(g) a step of heating and shrinking a portion of the tape for semiconductor processing that does not overlap with the chip, thereby removing the relaxation generated in the expanding process to maintain a gap of the chip,

(h) a step of picking up the chip with the adhesive layer from the adhesive layer of the semiconductor processing tape

Method for manufacturing a semiconductor device comprising a.

The manufacturing method of this semiconductor device is a method using stealth dicing.

<How to use>

A method of using the tape when the tape 10 for semiconductor processing of the present invention is applied to the manufacturing method (A) of the semiconductor device will be described with reference to FIGS. 2 to 5. First, as shown in FIG. 2, a surface protection tape 14 for protecting a circuit pattern, which contains an ultraviolet curable component in an adhesive, is bonded to the surface of the wafer W on which the circuit pattern is formed, and the back surface of the wafer W is ground. Back grinding process is performed.

After the end of the backgrinding process, as shown in FIG. 3, after the wafer W is loaded on the heater table 25 of the wafer mounter with the surface side down, the semiconductor processing tape 10 is placed on the back surface of the wafer W. To join. The tape 10 for semiconductor processing used herein is a laminate of pre-cut (pre-cut) adhesive films in a shape corresponding to the wafer W to be bonded, and the adhesive layer 13 is exposed on the surface to be bonded to the wafer W. The pressure-sensitive adhesive layer 12 is exposed around the region. The portion where the adhesive layer 13 of the semiconductor processing tape 10 is exposed and the back surface of the wafer W are bonded, and the portion where the adhesive layer 12 around the adhesive layer 13 is exposed and the ring frame 20 ). At this time, the heater table 25 is set to 70 to 80 ° C, whereby heat bonding is performed. In addition, in this embodiment, the adhesive tape 15 including the base film 11 and the adhesive layer 12 formed on the base film 11, and the adhesive layer 13 formed on the adhesive layer 12 Although the tape 10 for semiconductor processing having a was used, an adhesive tape and a film adhesive may be used, respectively. In this case, first, a film-like adhesive is bonded to the back surface of the wafer to form an adhesive layer, and the adhesive layer of the adhesive tape is bonded to the adhesive layer. At this time, the adhesive tape 15 according to the present invention is used as the adhesive tape.

Next, the wafer W to which the semiconductor processing tape 10 has been bonded is taken out from the heater table 25, and as shown in FIG. 4, the semiconductor processing tape 10 is placed on the adsorption table 26 face down. To load. Then, from the upper side of the wafer W adsorbed and fixed to the adsorption table 26, an energy ray light source 27 is used to irradiate, for example, ultraviolet rays of 1000 mJ / cm 2 to the substrate surface side of the surface protection tape 14, and then surface The adhesive force of the protective tape 14 to the wafer W is lowered, and the surface protective tape 14 is peeled from the wafer W surface.

Next, as shown in FIG. 5, the laser beam is irradiated to the portion to be divided of the wafer W to form a modified region 32 by multiphoton absorption inside the wafer W.

Next, as shown in (a) of FIG. 6, the tape 10 for semiconductor processing, to which the wafer W and the ring frame 20 are bonded, is placed on the base film 11 side down, and the stage of the expander is expanded. (21) It is loaded on.

Next, as shown in Fig. 6 (b), in the state where the ring frame 20 is fixed, the hollow cylindrical pushing member 22 of the expander is raised, and the tape 10 for semiconductor processing is lifted. Expand (expand). As the expansion condition, the expand speed is, for example, 5 to 500 mm / sec, and the expand amount (pushing amount) is, for example, 5 to 25 mm. As described above, when the tape 10 for semiconductor processing is stretched in the radial direction of the wafer W, the wafer W is divided into chips 34 in units of the modified region 32 as a starting point. At this time, in the adhesive layer 13, stretching (deformation) due to expansion is suppressed in a portion bonded to the back surface of the wafer W, so that fracture does not occur, but at the positions between the chips 34, tension due to expansion of the tape is concentrated And breaks. Therefore, as shown in Fig. 6C, the adhesive layer 13 is also divided along with the wafer W. Thereby, a plurality of chips 34 to which the adhesive layer 13 is attached can be obtained.

Next, as shown in FIG. 7, the pushing member 22 is returned to its original position, and the relaxation of the semiconductor processing tape 10 generated in the previous expanding process is removed, so that the chip 34 is removed. A step for stably maintaining the gap is performed. In this step, a warm air nozzle 29 is used, for example, in the region where the chip 34 is present in the semiconductor processing tape 10 and the annular heat shrinkage region 28 between the ring frames 20. Then, the hot air at 40 to 120 ° C. is blown to heat-shrink the base film 11, so that the tape 10 for semiconductor processing is tightened. Thereafter, the adhesive layer 12 is subjected to an energy ray curing treatment or a thermal curing treatment to weaken the adhesive strength of the adhesive layer 12 to the adhesive layer 13, and then the chip 34 is picked up.

In addition, although the tape 10 for semiconductor processing by this embodiment is provided with the adhesive layer 13 on the adhesive layer 12, you may comprise without forming the adhesive layer 13. In this case, the wafer may be used to bond only the wafer by bonding it on the pressure-sensitive adhesive layer 12. In the case of using the tape for semiconductor processing, the adhesive film produced in the same way as the adhesive layer 13 is used together with the wafer and pressure-sensitive adhesive. It may be bonded on the layer 12, and the wafer and the adhesive film may be divided.

<Example>

Next, in order to clarify the effect of the present invention, examples and comparative examples will be described in detail, but the present invention is not limited to these examples.

〔Production of Tape for Semiconductor Processing〕

(1) Preparation of base film

<Base film A>

Zinc ionomer of ethylene-methacrylic acid-ethyl methacrylate copolymer synthesized by radical polymerization method (methacrylic acid content 15%, ethyl methacrylate content 5%, softening point 72 ° C, melting point 90 ° C, density 0.96 g / cm 3, Resin beads with a zinc ion content of 5% by mass) were melted at 230 ° C and molded into a long film having a thickness of 150 µm using an extruder. Thereafter, the base film A was produced by stretching the elongated film in the TD direction so as to have a thickness of 90 µm.

<Base film B>

The base film B was produced in the same manner as the base film A except that the length of the long film was 180 µm and the lengthy film was stretched in the TD direction so as to have a thickness of 90 µm.

<Base film C>

The base film C was produced in the same manner as the base film A except that the long film had a thickness of 215 µm and the long film was stretched in the TD direction so as to have a thickness of 90 µm.

<Base film D>

Zinc ionomer of ethylene-methacrylic acid-isobutyl methacrylate copolymer synthesized by radical polymerization (11% of methacrylic acid content, 9% of isobutyl methacrylate content, softening point 64 ° C, melting point 83 ° C, density 0.95g / The resin beads (cm 3, zinc ion content 4% by mass) were melted at 230 ° C. and molded into a long film having a thickness of 150 μm using an extruder. Thereafter, the base film D was produced by stretching the elongated film in the TD direction so as to have a thickness of 90 μm.

<Base film E>

The resin beads in which the hydrogenated styrene-based thermoplastic elastomer and homo propylene (PP) were mixed at a mixing ratio of 52:48 were melted at 200 ° C, and formed into a long film having a thickness of 150 µm using an extruder. Thereafter, the base film E was produced by stretching the elongated film in the TD direction so that the thickness was 90 µm.

<Base film F>

The resin beads in which the hydrogenated styrene-based thermoplastic elastomer and homo propylene (PP) were mixed at a mixing ratio of 64:36 were melted at 200 ° C, and formed into a long film having a thickness of 150 µm using an extruder. Thereafter, the base film F was produced by stretching the elongated film in the TD direction so as to have a thickness of 90 µm.

<Base film G>

The base film G was produced in the same manner as the base film A except that the length of the long film was 150 μm and the lengthy film was stretched in the MD direction so as to have a thickness of 90 μm.

<Base film H>

A base film H was produced in the same manner as the base film D except that the length of the long film was 150 µm and the length of the long film was stretched in the MD direction so as to have a thickness of 90 µm.

<Base film I>

The base film I was produced in the same manner as the base film A except that the length of the long film was 90 µm and the stretching treatment of the long film was not performed.

<Base film J>

The base film J was produced in the same manner as the base film D except that the length of the long film was 90 µm and the stretching treatment of the long film was not performed.

<Base film K>

The base film K was produced in the same manner as the base film E, except that the length of the long film was 90 µm, and the stretching treatment of the long film was not performed.

<Base film L>

The base film L was produced in the same manner as the base film F, except that the length of the long film was 90 µm and the stretching treatment of the long film was not performed.

<Base film M>

The base film M was produced in the same manner as the base film A except that the length of the long film was 110 µm and the lengthy film was stretched in the TD direction so as to have a thickness of 90 µm.

<Base film N>

The base film N was produced in the same manner as the base film A except that the length of the long film was 120 µm and the length of the long film was stretched in the TD direction so that the thickness was 90 µm.

(2) Preparation of acrylic copolymer

As an acrylic copolymer (A1) having a functional group, 2-ethylhexyl acrylate, 2-hydroxyethyl acrylate and methacrylic acid are included, the proportion of 2-ethylhexyl acrylate is 60 mol%, and the mass average molecular weight is 70. Only the copolymer was prepared. Next, 2-isocyanatoethyl methacrylate was added so that the iodine number became 25, and an acrylic copolymer having a glass transition temperature of -50 ° C, a hydroxyl value of 10 mgKOH / g, and an acid value of 5 mgKOH / g was prepared.

(3) Preparation of adhesive composition

40 parts by mass of epoxy resin `` 1002 '' (Mitsubishi Chemical Co., Ltd., solid bisphenol A type epoxy resin, epoxy equivalent 600), epoxy resin 806 (Mitsubishi Chemical Co., Ltd. trade name, bisphenol F type epoxy resin, Epoxy equivalent 160, specific gravity 1.20) 100 parts by mass, curing agent `` Dyhard100SF '' (trade name, Dicyandiamide) 5 parts by mass, silica filler `` SO-C2 '' (product name by Admafine Co., Ltd., average particle size 0.5 μm ) MEK was added to a composition containing 200 parts by mass, and 3 parts by mass of "Aerosil R972", a silica filler (trade name, manufactured by Nippon Aerosil Co., Ltd., average particle diameter of primary particle size of 0.016 µm), followed by stirring and mixing. It was set as a uniform composition.

To this, 100 parts by mass of phenoxy resin "PKHH" (trade name manufactured by INCHEM, mass average molecular weight 52,000, glass transition temperature 92 ° C), "KBM-802" as a coupling agent (trade name, manufactured by Shin-Etsu Silicone Co., Ltd., mercaptopropyl tree Methoxysilane) 0.6 parts by mass, and "Curesol 2PHZ-PW" as a curing accelerator (trade name, 2-phenyl-4,5-dihydroxymethylimidazole manufactured by Shikoku Chemical Co., Ltd., decomposition temperature 230 ° C) 0.5 parts by mass was added and stirred and mixed until uniform. Furthermore, the varnish of the adhesive composition was obtained by filtering this with a 100 mesh filter and vacuum defoaming.

<Example 1>

To 100 parts by mass of the acrylic copolymer described above, 5 parts by mass of coronate L (made by Nippon Polyurethane) was added as a polyisocyanate, and a mixture of 3 parts by mass of Esacure KIP 150 (manufactured by Lamberti) as a photopolymerization initiator was added to acetic acid. It was dissolved in ethyl and stirred to prepare an adhesive composition.

Next, the pressure-sensitive adhesive composition was coated on a release liner comprising a release-treated polyethylene-terephthalate film so that the thickness after drying was 10 µm, dried at 110 ° C. for 3 minutes, and then bonded to the base film, followed by bonding to the base film. An adhesive sheet having an adhesive layer formed thereon was produced.

Next, to the release liner comprising a release-treated polyethylene-terephthalate film, the above-mentioned adhesive composition was coated to a thickness of 20 µm after drying, and dried at 110 ° C. for 5 minutes, so that an adhesive layer was formed on the release liner. The formed adhesive film was produced.

The adhesive sheet was cut into a shape shown in FIG. 3 and the like, which can be bonded to cover the opening with respect to the ring frame. Moreover, the adhesive film was cut out in the shape shown in FIG. 3 etc. which can cover the back surface of a wafer. Then, the adhesive layer side of the adhesive sheet and the adhesive layer side of the adhesive film were bonded to form a portion where the adhesive layer 12 was exposed around the adhesive film, as shown in FIG. 3 and the like, to prepare a tape for semiconductor processing. .

<Examples 2 to 8 and Comparative Examples 1 to 6>

The semiconductor processing tapes of Examples 2 to 8 and Comparative Examples 1 to 6 were produced in the same manner as in Example 1 except that the base film shown in Table 1 was used.

The adhesive tape of the tape for semiconductor processing according to Examples and Comparative Examples was cut to a length of 24 mm (direction in which the strain amount was measured) and 5 mm in width (direction perpendicular to the direction in which the strain amount was measured) to obtain a sample piece. .

The obtained sample piece was subjected to deformation by temperature in two directions of MD and TD under the following measurement conditions by a tensile load method using a thermomechanical property tester (manufactured by Rigaku Co., Ltd., trade name: TMA8310). It was measured.

(Measuring conditions)

Measurement temperature: -60 to 100 ℃

Heating rate: 5 ℃ / min

Measurement load: 19.6mN

Atmosphere gas: nitrogen atmosphere (100ml / min)

Sampling: 0.5s

Interchuck distance: 20㎜

Then, the thermal strain was calculated by the following formula (1), the differential value of the thermal strain at every 1 ° C between 40 ° C and 80 ° C in the MD direction and the TD direction was obtained, and the sum was calculated. The results are shown in Table 1 and Table 2.

(Evaluation of Pick-up Failure)

By the method shown below, the wafers were divided into chips for the semiconductor processing tapes of the examples and the comparative examples, and pick-up defects were evaluated.

(a) a step of bonding a surface protection tape to the wafer surface on which the circuit pattern is formed,

(b) irradiating a laser beam to a portion to be divided of the wafer to form a modified region by multiphoton absorption inside the wafer;

(c) a backgrinding process for grinding the wafer back surface,

(d) a step of bonding the adhesive layer of the semiconductor processing tape to the back surface of the wafer while the wafer is heated to 70 to 80 ° C.,

(e) peeling the surface protection tape from the wafer surface,

(f) a step of dividing the wafer and the adhesive layer along a dividing line by expanding the tape for semiconductor processing, thereby obtaining a chip having a plurality of adhesive films;

(g) by heating and shrinking the non-overlapping portion of the tape for semiconductor processing (the region where the chip is present and the annular region between the ring frame) and the shrinkage caused in the expand process in (f), The process of maintaining the spacing of the chip,

(h) A step of picking up the chip with the adhesive layer from the pressure-sensitive adhesive layer of the semiconductor processing tape was performed.

Further, in the step (d), the wafer was bonded to the semiconductor processing tape such that the line of division of the wafer followed the MD direction and TD direction of the base film.

In the step (f), in the DDS2300 manufactured by Disco Co., Ltd., the dicing ring frame bonded to the tape for semiconductor processing is pressed down by the expanding ring of DDS2300 manufactured by Disco Co., Ltd., and the wafer bonding portion of the tape for semiconductor processing is circumferential. , The expansion was performed by pressing a portion not overlapping the wafer against a circular pushing member. (f) As conditions of the process, the amount of expand was adjusted so that the expand speed was 300 mm / sec and the expand height was 10 mm. Here, the amount of expand refers to the amount of change in the relative position of the ring frame and the pushing member before and after pressing. The chip size was 1 × 1 mm square.

In the step (g), after expanding again under the conditions of the expansion speed of 1 mm / sec and the expansion height of 10 mm at room temperature, heat shrink treatment was performed under the following conditions.

[Condition 1]

Heater setting temperature: 220 ℃

Heat air volume: 40L / min

Distance between heater and semiconductor processing tape: 20㎜

Heater rotation speed: 7 ° / sec

[Condition 2]

Heater setting temperature: 220 ℃

Heat air volume: 40L / min

Distance between heater and semiconductor processing tape: 20㎜

Heater rotation speed: 5 ° / sec

The tapes for semiconductor processing of Examples 1 to 8 and Comparative Examples 1 to 6 were picked up after the step (g), and the presence or absence of pickup defects in which adjacent chips were picked up at the same time was evaluated. In the conditions (1) and (2) of the above-described step (g), there was no pickup defect in the condition 1, and there was no pickup defect in the condition 1, but there was no pickup failure in the condition 2 When the incidence rate is less than 1% as a good product, there is no occurrence of a pickup defect in condition 1, but in condition 2, the occurrence of a pickup failure in condition 2 is 1% or more and less than 3% as an allowable product. It was evaluated as "x" that the occurrence of pickup defects in both sides was 3% or more as defective products. The results are shown in Table 1 and Table 2. In addition, at the time of evaluation, as shown in Fig. 8, the defect in the MD direction of the adhesive tape is similarly carried out around the rightmost shortest chip 50a in Fig. 8 without any defect in the MD direction of the adhesive tape. In Fig. 8, there are 100 chips in each of the leftmost chip 50b around the leftmost edge, around the most extreme chip 51 without defects in the TD direction of the adhesive tape, and around the chip 52 located in the center. Was picked up and evaluated.

As shown in Table 1, the tapes for semiconductor processing according to Examples 1 to 8 were heated every 40 ° C to 80 ° C between 40 ° C and 80 ° C measured at elevated temperature by a thermomechanical property tester in the MD direction of the adhesive tape. Since the sum of the differential value of the strain and the total of the differential values of the thermal strain at 40 ° C to 80 ° C measured at the time of heating by the thermomechanical property tester in the TD direction is a negative value, It was possible to suppress the occurrence of pickup defects in which adjacent chips were picked up simultaneously.

On the other hand, the semiconductor processing tapes according to Comparative Examples 1 to 6, as shown in Table 2, for every 1 ° C between 40 ° C and 80 ° C measured at elevated temperature by a thermomechanical property tester in the MD direction of the adhesive tape. The sum of the sum of the differential values of the thermal strain rate of and the sum of the derivatives of the differential values of the thermal strain rate of every 1 ° C between 40 ° C and 80 ° C measured at elevated temperature by a thermomechanical property tester in the TD direction has a negative value. Since it was not, a pickup defect occurred at the time of pickup.

10: semiconductor processing tape
11: base film
12: adhesive layer
13: adhesive layer
22: push-up member
28: heat shrink zone
29: warm air nozzle

Claims (4)

Has an adhesive tape having a base film and an adhesive layer formed on at least one side of the base film,
The adhesive tape is a thermomechanical property tester in the TD direction and the sum of the differential values of the thermal strain at every 1 ° C between 40 ° C and 80 ° C measured at elevated temperature by a thermomechanical property tester in the MD direction. The sum of the sum of the differential values of the thermal strain at every 1 ° C between 40 ° C and 80 ° C measured at elevated temperature is a negative value,
A tape for semiconductor processing, characterized in that it is used for the processing of semiconductors, including an expanding process for expanding the adhesive tape. Has an adhesive tape having a base film and an adhesive layer formed on at least one side of the base film,
The base film includes an ionomer resin or a mixed resin composition of polypropylene and a styrene-butadiene copolymer,
The adhesive tape is a thermomechanical property tester in the TD direction and the sum of the differential values of the thermal strain at every 1 ° C between 40 ° C and 80 ° C measured at elevated temperature by a thermomechanical property tester in the MD direction. The sum of the sum of the differential values of the thermal strain rate for every 1 ° C between 40 ° C and 80 ° C measured at elevated temperature by is a negative value. The method according to claim 1 or 2,
A tape for semiconductor processing, wherein an adhesive layer is laminated on the pressure-sensitive adhesive layer side. The method according to claim 1 or 2,
A tape for semiconductor processing, characterized in that it is used for blade dicing of full-cut and half-cut, laser dicing, or stealth dicing by laser.

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