TW201700671A - Semiconductor processing tape - Google Patents

Abstract

To provide a semiconductor processing tape which has excellent pick-up properties and in which the thermal shrinkage rate in a tape shrinkage process is low, wrinkles do not occur, and kerf width extends sufficiently without displacement of chip position. Provided is a semiconductor processing tape that is characterized by having an adhesive tape that is provided with a substrate film and an adhesive layer formed on at least one surface side of the substrate film, wherein in a process for fragmenting an adhesive by expansion, the relationship between the stress on only the substrate and the stress on the adhesive tape when the adhesive tape is subjected to a tensile elongation of 10% according to a method set forth in JIS7162 is: stress on adhesive tape/stress on only substrate = 1 or less.

Description

Semiconductor processing tape Field of invention

The present invention relates to a tape for semiconductor processing having excellent pick-up properties.

Background of the invention

Conventionally, a manufacturing step of a semiconductor device such as an integrated circuit (IC: Integrated Circuit) is a step of performing a back surface polishing step of grinding a wafer back surface to thin a wafer on which a circuit pattern is formed; a cutting step of separating a wafer into a wafer unit by attaching a tape for semiconductor processing having adhesiveness and elasticity to the back surface of the wafer; and expanding the step of expanding the tape for semiconductor processing; picking up a step of picking up the broken wafer; and a die bonding (assembly) step of attaching the picked wafer to a lead frame, a package substrate, etc. (or in the case of a stacked package, between the wafers Carry out the layering, and then).

In the above back grinding step, a surface protective tape is used to protect the circuit pattern forming surface (wafer surface) of the wafer from contamination. When the surface protective tape is peeled off from the wafer surface after the wafer back surface grinding is completed, the semiconductor processing tape (cutting die bonding tape) described below is bonded to the wafer back surface, and the semiconductor processing is performed. The tape side is fixed at the suction Attached to the surface protection tape, the surface protection tape is peeled off after the treatment of the adhesion of the wafer is lowered. The wafer after the surface protective tape is peeled off is then taken from the adsorption stage and supplied to the next cutting step in a state in which the semiconductor processing tape is bonded to the back surface. In addition, when the surface protective tape is composed of an energy ray-curable component such as ultraviolet rays, the surface protective tape is an energy ray irradiation treatment, and the surface protective tape is a heat curing component.

In the dicing step to the assembly step after the back surface polishing step, a semiconductor processing tape obtained by laminating an adhesive layer and an adhesive layer on the base film in the following order is used. Usually, when such a tape for semiconductor processing is used, first, an adhesive layer of a semiconductor processing tape is bonded to the back surface of the wafer to fix the wafer, and the wafer and the adhesive layer are cut into wafer units using a dicing blade. . Subsequently, an expansion step of expanding the tape toward the wafer to expand the spacing of the wafers from each other is performed. This expansion step is carried out in order to improve the visibility of a wafer using a CCD camera or the like in the subsequent pickup step, while preventing wafer breakage due to contact between adjacent wafers when the wafer is picked up. Subsequently, the wafer is picked up at the same time as the adhesive layer is peeled off from the adhesive layer, and is directly attached to the lead frame, the package substrate, and the like in the mounting assembly step. As described above, by using the tape for semiconductor processing, since the wafer with the adhesive layer can be directly attached to the lead frame, the package substrate, or the like, the application step of the adhesive can be omitted and the die-bonding film can be subsequently applied to each wafer. The steps.

However, in the above cutting step, as described above, because it is used The dicing blade cuts the wafer together with the layer of the adhesive, so it is not only the chip of the wafer, but also the chips of the adhesive layer. Further, when the chips of the adhesive layer are clogged in the dicing grooves of the wafer, adhesion between the wafers causes pick-up defects and the like, and there is a problem that the manufacturing yield of the semiconductor device is low.

In order to solve such a problem, a method has been proposed in which a wafer is used to cut only a wafer in a cutting step, and the semiconductor processing tape is expanded in an expanding step, whereby the adhesive layer is separated one by one with each wafer (for example, , Patent Document 1). By using such a method of dividing the adhesive layer by the tension at the time of expansion, the chips of the adhesive are not generated and the pickup step does not cause an adverse effect.

Further, in recent years, as a method of cutting a wafer, there has been proposed a so-called stealth dicing method in which a wafer can be cut without contact using a laser processing apparatus. For example, as a stealth dicing method, Patent Document 2 discloses a method of cutting a semiconductor substrate, comprising the steps of: interposing an adhesive layer (wafer bonding resin layer) therebetween, and attaching a focus light to a sheet. a step of irradiating the inside of the semiconductor substrate with laser light, forming a modified region in the inside of the semiconductor substrate by multiphoton absorption, and setting the modified region as a predetermined portion to be cut; and cutting the sheet by expanding the sheet The step of cutting the semiconductor substrate and the adhesive layer by the predetermined portion.

Further, as another method of cutting a wafer using a laser processing apparatus, for example, Patent Document 3 proposes a method of dividing a wafer, comprising the steps of: mounting a bonding layer for die bonding on a back surface of a wafer (following a film) a step of laminating an adhesive tape capable of being stretched on the side of the adhesive layer of the wafer to which the adhesive layer is bonded; and bonding the protective adhesive tape from the side The surface of the wafer illuminates the laser beam along a street and is divided into individual wafers; the protective adhesive tape is expanded and a tensile force is applied to the adhesive layer, and the adhesive layer is broken at each wafer. And the step of detaching the wafer to which the ruptured adhesive layer is attached from the protective adhesive tape.

When the wafer cutting method described in Patent Document 2 and Patent Document 3 is used, since the wafer is cut by the expansion of the irradiated laser light and the tape without contact, the physical load on the wafer is small. Moreover, wafer chips (chips) generated during blade cutting in the mainstream are not generated and the wafer can be cut. Further, since the adhesive layer is separated by expansion, the chips of the adhesive layer are not generated. Therefore, attention has been paid as an excellent technology that can replace blade cutting.

Further, in order to prevent the gap between the respective wafers from being maintained due to the relaxation after the expansion, Patent Document 4 proposes a method of heating the tape to shrink and tighten after the breaking step to maintain the interval between the wafers ( Hereinafter, the method of "kerf width").

Prior technical literature Patent literature

Patent Document 1: Japanese Laid-Open Patent Publication No. 2007-5530

Patent Document 2: Japanese Patent Laid-Open Publication No. 2003-338467

Patent Document 3: Japanese Patent Laid-Open Publication No. 2004-273895

Patent Document 4: Japanese Laid-Open Patent Publication No. 2011-216508

Summary of invention

On the other hand, since the expansion of the slit width cannot be maintained in the shrinking step, the adhesive layer is coalesced and adhered, and there is a problem that the pickup step is defective.

The invention of the present application provides a tape for semiconductor processing having excellent pick-up property in which the position of the wafer does not shift and the slit width is sufficiently expanded in the tape shrinking step.

That is, the invention relates to a tape for semiconductor processing, comprising: an adhesive tape comprising a base film and an adhesive layer formed on at least one side of the base film; and Expanding the step of breaking the adhesive agent, the relationship between the stress of the substrate and the stress of the adhesive tape when the tensile adhesive strength is 10% measured by the method specified in JIS7162 is: stress of the adhesive tape / only the substrate The stress = 1 or less.

Further, the above-mentioned semiconductor processing tape is used in a manufacturing method of a semiconductor device including the following steps: (a) a step of bonding a surface protective tape to a surface of a wafer on which a circuit pattern is formed; (b) a step of grinding the back surface of the wafer back surface; (c) a step of bonding the adhesive layer of the semiconductor processing tape to the back surface of the wafer in a state where the wafer is heated; (d) the surface a step of peeling off the protective tape from the surface of the wafer; (e) irradiating the predetermined portion of the wafer with the laser beam, using multiple light The sub-absorption step of forming a modified region in the wafer; (f) by expanding the semiconductor processing tape, the wafer and the adhesive layer of the semiconductor processing tape are separated along a break line a step of expanding a plurality of wafers with the adhesive layer; (g) removing the slack generated in the expanding step by heating and shrinking the portion of the semiconductor processing tape that has not been overlapped with the wafer And maintaining the interval between the wafers; (h) the step of picking up the wafer with the adhesive layer from the adhesive layer of the semiconductor processing tape.

Further, the above-mentioned semiconductor processing tape is used in a manufacturing method of a semiconductor device including the following steps: (a) a step of bonding a surface protective tape to a surface of a wafer on which a circuit pattern is formed; (b) a step of grinding the back surface of the wafer back surface; (c) a step of bonding the adhesive layer of the semiconductor processing tape to the back surface of the wafer in a state where the wafer is heated; (d) the surface a step of peeling the protective tape from the surface of the wafer; (e) a step of irradiating the laser light along the break line of the surface of the wafer to break the wafer into a wafer; (f) by expanding the tape for semiconductor processing, a step of expanding the plurality of wafers with the adhesive layer obtained by dividing the adhesive layer with each of the wafers; (g) the tape for semiconductor processing after expansion, by not overlapping the wafer Partial heat shrinkage to remove the production produced in the aforementioned expansion steps a step of relaxing and maintaining the interval between the wafers; (h) a step of picking up the wafer with the adhesive layer from the adhesive layer of the semiconductor processing tape.

Further, the above-mentioned semiconductor processing tape is used in a manufacturing method of a semiconductor device including the following steps: (a) a step of bonding a surface protective tape to a surface of a wafer on which a circuit pattern is formed; (b) a step of grinding the back surface of the wafer back surface; (c) a step of bonding the adhesive layer of the semiconductor processing tape to the back surface of the wafer in a state where the wafer is heated; (d) the surface a step of peeling the protective tape from the surface of the wafer; (e) a step of cutting the wafer into a wafer along a break line using a dicing blade; (f) expanding the aforementioned semiconductor processing tape a layer extending step of each of the wafers to obtain a plurality of wafers with the adhesive layer; (g) the expanded semiconductor tape for processing, by heat-shrinking a portion not overlapped with the wafer To remove the slack generated in the aforementioned expansion step and to maintain the interval between the wafers; (h) pick up the aforementioned wafer with the aforementioned adhesive layer from the adhesive layer of the aforementioned semiconductor processing tape Step.

Further, the above-mentioned semiconductor processing tape is used in a method of manufacturing a semiconductor device including the following steps: (a) bonding a dicing tape to a back surface of a wafer on which a circuit pattern is formed, and a step of cutting the cutting blade along the predetermined line to a depth smaller than the thickness of the wafer; (b) a step of attaching the surface protective tape to the surface of the wafer; (c) peeling off the cutting tape, and a back surface polishing step of grinding the back surface of the wafer to be divided into wafers; (d) bonding the adhesive layer of the semiconductor processing tape to the aforementioned wafer to be separated into the wafer while the wafer is heated a step of backing the wafer; (e) a step of peeling the surface protective tape from the surface of the wafer to be separated into the wafer; (f) expanding the aforementioned semiconductor processing tape to cause the aforementioned adhesive layer to follow each of the foregoing a step of expanding a plurality of wafers with the adhesive layer obtained by dividing the wafer; (g) removing the portion of the semiconductor processing tape after expansion by heat-shrinking a portion that is not overlapped with the wafer a step of relaxing and maintaining the interval between the wafers generated by the step; (h) a step of picking up the wafer with the adhesive layer from the adhesive layer of the aforementioned semiconductor processing tape.

Further, the above-mentioned semiconductor processing tape is used in a manufacturing method of a semiconductor device including the following steps: (a) a step of bonding a surface protective tape to a surface of a wafer on which a circuit pattern is formed; (b) Irradiating the predetermined portion of the wafer with the laser beam, and forming a modified region inside the wafer by multiphoton absorption; (c) a step of grinding the back surface of the wafer back surface; (d) a step of bonding the adhesive layer of the semiconductor processing tape to the back surface of the wafer while the wafer is heated; (e) a step of peeling the surface protective tape from the surface of the wafer; (f) expanding the adhesive layer of the semiconductor processing tape to form the adhesive layer of the semiconductor processing tape along the break line by expanding the semiconductor processing tape a step of expanding a plurality of wafers with the adhesive layer; (g) removing the slack generated in the expanding step by heating and shrinking the portion of the semiconductor processing tape that has not been overlapped with the wafer And maintaining the interval of the wafers; (h) the step of picking up the wafer with the adhesive layer from the adhesive layer of the semiconductor processing tape.

Further, the present invention relates to a semiconductor device using the above-described tape for semiconductor processing.

By using the tape for semiconductor processing provided by the present invention, the slit width is uniformly expanded without changing the width, and thus it is possible to obtain a semiconductor element having high reliability in which the wafer position is not shifted and which does not cause pickup failure.

10‧‧‧Semiconductor processing tape

11‧‧‧Substrate film

12‧‧‧Adhesive layer

13‧‧‧ adhesive layer

14‧‧‧Surface protection tape

15‧‧‧Auxiliary tape

20‧‧‧ ring frame

21‧‧‧stage

22‧‧‧ Push-up components

25‧‧‧heater machine

26‧‧‧Adsorption station

27‧‧‧UV (energy line) light source

28‧‧‧heat shrinkage area

29‧‧‧Warm air nozzle

32‧‧‧Modified area

34‧‧‧ wafer

W‧‧‧ wafer

Fig. 1 is a cross-sectional view schematically showing the structure of a tape for semiconductor processing according to an embodiment of the present invention.

Fig. 2 is a cross-sectional view showing a state after the wafer is attached to the surface protective tape.

3 is a view for explaining a tape for semiconductor processing according to an embodiment of the present invention; A cross-sectional view of the steps of wafer bonding and ring frame.

Figure 4 is a cross-sectional view showing the step of peeling the surface protective tape from the surface of the wafer.

Fig. 5 is a cross-sectional view showing a state in which a modified region is formed on a wafer by laser processing.

Fig. 6 (a) is a cross-sectional view showing a state in which the tape for semiconductor processing according to the embodiment of the present invention is mounted on an extension device. (b) is a cross-sectional view showing a process of dividing a wafer into wafers by expansion of a tape for semiconductor processing. (c) A cross-sectional view showing the expanded semiconductor processing tape, the adhesive layer, and the wafer.

Figure 7 is a cross-sectional view for explaining the heat shrinking step.

Form for implementing the invention

<Semiconductor processing tape>

Fig. 1 is a cross-sectional view showing a tape 10 for semiconductor processing according to an embodiment of the present invention. The tape 10 for semiconductor processing of the present invention is used to break the adhesive layer 13 along the wafer when the wafer is broken into wafers by expansion. The semiconductor processing tape 10 has an adhesive tape 15 composed of a base film 11 and an adhesive layer 12 provided on the base film 11, and an adhesive layer 13 provided on the adhesive layer 12; The back side is attached to the adhesive layer 13. Further, the respective layers may be cut (pre-cut) into a predetermined shape in accordance with the use procedure and apparatus. Further, the tape 10 for semiconductor processing of the present invention may be cut into a wafer amount per wafer, or a plurality of long sheets cut into a wafer amount per wafer may be formed. The coil is in the form of a roll.

The tape for semiconductor processing according to the present invention has an adhesive tape comprising a base film and an adhesive layer formed on at least one side of the base film; and the step of breaking the adhesive by expansion, the aforementioned When the adhesive tape is subjected to the tensile test according to the method specified in JIS7162, only the relationship between the stress of the substrate and the stress of the adhesive tape at the tensile elongation of 10% must satisfy the following conditions: stress of the adhesive tape / stress of only the substrate = 1 the following.

Specifically, a sample having a width of 25 mm was produced, and the sample was attached to a tensile tester so that the distance between the chucks became 50 mm, and after stretching at 5 mm, that is, 10% at a speed of 100 mm/min, the measurement was held for 60 seconds. value.

In addition, the term "stress of the adhesive tape" refers to the stress of the semiconductor processing tape 10 of the present invention used in the expansion step of the method for manufacturing a semiconductor device.

Further, the above-mentioned "stress of only the substrate" means the stress in the state of only the base film 11 before the adhesive layer 12 is placed on the base film 11.

By satisfying the above conditions, it is possible to sufficiently ensure the width of the slit without wrinkles, and it is possible to achieve a remarkable effect that the wafer position is not shifted and the pickup can be performed satisfactorily.

When the stress of the adhesive tape/only the value of the stress of the substrate is more than 1, the slit width cannot be sufficiently ensured, or the uniformity cannot be uniform and the pickup property is poor.

As a method of adjusting the physical properties of the conductor tape within the range, there are various methods by performing an energy ray hardening treatment before performing the expansion treatment; or performing a conventional biaxial extrusion method and a heat fixing portion. Can not be properly adjusted.

Hereinafter, the structure of each layer of the tape for semiconductor processing will be described.

<Substrate film>

In the case where the wafer can be cut without deviation in all directions in the expansion step, the base film 11 is preferably uniform and isotropic, and the material is not limited. Generally, the cross-linking resin has a large restoring force against stretching as compared with the non-crosslinked resin, and has a large shrinkage stress when heat is applied to the state after being stretched after the expanding step. Therefore, it is excellent in the heat shrinking step in which the tape is stretched by the slack in the tape after the expansion step is removed by heat shrinkage, and the interval between the respective wafers is stably maintained. Among the crosslinked resins, a thermoplastic crosslinked resin is preferably used. On the other hand, the non-crosslinking resin has less resilience to stretching than the crosslinked resin. Therefore, the advantage is that the expansion step in the low temperature region such as -15 ° C ~ 0 ° C will temporarily relax, and after returning to the normal temperature, the tape is not easily contracted in the face of the picking step and the assembly step, thereby preventing adhesion. Contact is made between the adhesive layers of the wafer. Among the non-crosslinked resins, an olefin-based non-crosslinked resin is preferably used.

As such a thermoplastic cross-linking resin, for example, a ternary having an ethylene-(meth)acrylic acid binary copolymer or an ethylene-(meth)acrylic acid-alkyl (meth)acrylate as a main polymer component can be exemplified. A copolymer, an ionic polymer resin obtained by crosslinking a metal ion. These aspects are suitable for the expansion step in terms of uniform expansion, and are particularly suitable in terms of the effect of generating a strong restoring force upon heating by crosslinking. The metal ion system contained in the above ionic polymer resin is not particularly limited. Zinc, sodium, etc. are mentioned, and zinc ion is preferable in terms of low elution property and low pollution. The alkyl (meth) acrylate of the above terpolymer is preferably an alkyl group having 1 to 4 carbon atoms for a wafer having a high modulus of elasticity. Examples of such (meth)acrylic acid alkyl esters include methyl methacrylate, ethyl methacrylate, propyl methacrylate, butyl methacrylate, methyl acrylate, ethyl acrylate, and propyl acrylate. Butyl acrylate and the like.

Further, as the above-mentioned thermoplastic cross-linking resin, in addition to the above-mentioned ionic polymer resin, by a low-density polyethylene selected from a specific gravity of 0.910 or more to less than 0.930, or an ultra-low-density polyethylene having a specific gravity of less than 0.910, and ethylene- A resin of a vinyl acetate copolymer is also suitable for crosslinking an energy ray such as an electron beam. Since the crosslinked portion and the non-crosslinked portion of the thermoplastic crosslinked resin coexist in the resin, they have a certain uniform expansion property. Further, since the strong restoring force acts upon heating, it is also suitable to remove the tape slack generated in the expanding step, since chlorine is hardly contained in the molecular chain structure, so it is not required even after use. The tape is incinerated because the chlorinated aromatic hydrocarbons of dioxin and its analog are not produced, so the environmental load is also small. By appropriately adjusting the amount of energy rays irradiated to the polyethylene and the ethylene-vinyl acetate copolymer, a resin having sufficient uniform expandability can be obtained.

Further, as the non-crosslinking resin, for example, a mixed resin composition of a polypropylene and a styrene-butadiene copolymer can be exemplified.

As the polypropylene, for example, a homopolymer of propylene, a block type or a random type propylene-ethylene copolymer can be used. Random propylene-ethylene The rigidity of the polymer is small, which is preferred. When the content of the ethylene structural unit in the propylene-ethylene copolymer is 0.1% by weight or more, the flexibility of the tape and the compatibility between the resins in the mixed resin composition are high. When the rigidity of the tape is appropriate, the cutting property of the wafer is improved, and when the compatibility between the resins is high, the amount of extrusion and discharge is easily stabilized. It is preferably 1% by weight or more. When the content of the ethylene structural unit in the propylene-ethylene copolymer is 7% by weight or less, it is excellent in that the polypropylene is easily and stably polymerized. It is preferably 5% by weight or less.

As the styrene-butadiene copolymer, a hydride can also be used. When the styrene-butadiene copolymer is hydrogenated, compatibility with propylene is good, and embrittlement and discoloration due to oxidative degradation of the double bond in butadiene can be prevented. When the content of the styrene structural unit in the styrene-butadiene copolymer is 5% by weight or more, it is preferred that the styrene-butadiene copolymer is easily polymerized stably. Moreover, when it is 40% by weight or less, it is excellent in terms of flexibility and expandability. It is preferably 25% by weight or less, more preferably 15% by weight or less. Any of a styrene-butadiene copolymer, a block type copolymer or a random type copolymer can be used. Since the styrene phase is uniformly dispersed, it is possible to suppress the rigidity from becoming too large and the expansion property is improved, and a random copolymer is preferable.

When the content of the polypropylene in the mixed resin composition is 30% by weight or more, it is excellent in that the thickness of the base film can be suppressed from being uneven. When the thickness is uniform, the expandability is easily equalized, and it is easy to prevent the stress relaxation property of the base film from becoming too large, so that the distance between the wafers becomes small and the contact between the adhesive layers is re-welded. Preferably 50% by weight on. When the content of the polypropylene is 90% by weight or less, the rigidity of the base film can be easily adjusted. When the rigidity of the base film is too large, the force required to expand the base film becomes large, so that the load on the apparatus becomes large, and the breakage of the wafer and the adhesive layer 13 cannot be sufficiently expanded, so that appropriate Ground adjustment is very important. The lower limit of the content ratio of the styrene-butadiene copolymer in the mixed resin composition is preferably 10% by weight or more, and it is easy to adjust the rigidity of the base film which is suitable for the apparatus. When the upper limit is 70% by weight or less, the thickness unevenness can be suppressed, and it is excellent, and it is preferably 50% by weight or less.

Further, in the example shown in Fig. 1, the base film 11 is a single layer, but it is not limited thereto, and may be a plurality of layers in which two or more kinds of resins are laminated, or one type of resin layer may be used. More than 2 layers. From the viewpoint of further reluctance to exhibit respective characteristics, it is preferable to unify crosslinkability or non-crosslinking property of two or more kinds of resins, and to supplement each of the disadvantages, to make cross-linking or non-crossing It is better to combine the cases after the combination. The thickness of the base film 11 is not particularly limited as long as it has sufficient strength to be easily stretched and not broken in the expansion step of the semiconductor processing tape 10. For example, it is preferably about 50 to 300 μm, and more preferably 70 μm to 200 μm. Further, the base film 11 is preferably a crystalline resin.

As a method of producing the base film 11 of the plurality of layers, a conventional extrusion method, lamination method, or the like can be used. When the lamination method is used, the adhesive may also be interposed between the layers. As the adhesive, a conventionally known adhesive can also be used.

<Adhesive layer>

The adhesive layer 12 can be formed by applying an adhesive composition to the base film 11.

The adhesive layer 12 constituting the tape 10 for semiconductor processing of the present invention has a degree of retention that does not cause peeling of the adhesive layer 13 at the time of dicing, and which does not cause wafer scattering or the like, and is easily attached to the adhesive layer at the time of pickup. 13 can produce the characteristics of peeling.

In the tape for semiconductor processing 10 of the present invention, the structure of the adhesive composition constituting the adhesive layer 12 is not limited, and in order to improve the pick-up property after cutting, it is preferable that the energy ray hardening property is good, and it is easy after hardening. A material which is peeled off from the adhesive layer 13 is preferred. In one embodiment, in the adhesive composition, as the matrix resin, those having a polymer (A) containing 60 mol% or more and having a carbon number of 6 to 12 can be exemplified. The (meth) acrylate of the alkyl chain has an energy ray hardening carbon-carbon double bond having an iodine value of 5 to 30. Here, the energy ray means an ionizing radiation such as an ultraviolet ray or an electron ray.

When the amount of introduction of the energy ray-curable carbon-carbon double bond in the polymer (A) is iodine value of 5 or more, it is excellent in that the effect of reducing the adhesion after the energy ray irradiation is high. It is preferably 10 or more. Further, when the iodine value is 30 or less, the holding power of the wafer after the irradiation of the energy ray to the time of picking up is high, and it is excellent in that it is easy to enlarge the gap of the wafer at the time of expansion before the picking step. When the gap of the wafer can be sufficiently expanded before the picking step, it is preferable because the image of each wafer is easily recognized at the time of picking up, or it is easy to pick up. Further, when the amount of introduction of the carbon-carbon double bond is 5 or more and 30 or less, the polymer (A) itself is stable and easy to manufacture, which is preferable.

Further, when the glass transition temperature of the polymer (A) is -70 ° C or more, it is excellent in heat resistance with heat generated by energy ray irradiation, and is preferably -66 ° C or higher. Moreover, when it is 15 ° C or less, it is excellent in the effect of preventing wafer scattering after dicing of a rough surface, and is preferably 0 ° C or lower, more preferably -28 ° C or lower.

The above polymer (A) may be produced by any of the above, and for example, an acrylic copolymer and a compound having an energy ray-curable carbon-carbon double bond may be used; and an acrylic system having a functional group may be used. The methacrylic copolymer (A1) having a copolymer or a functional group is obtained by reacting with a compound (A2) having a functional group capable of reacting with a functional group and having an energy ray-curable carbon-carbon double bond.

In the methacrylic copolymer (A1) having the above-mentioned functional group, a monomer (A1-1) having a carbon-carbon double bond such as an alkyl acrylate or an alkyl methacrylate, and having a carbon can be exemplified. A monomer obtained by copolymerizing a monomer having a carbon double bond and having a functional group (A1-2). Examples of the monomer (A1-1) include hexyl acrylate having an alkyl chain having 6 to 12 carbon atoms, n-octyl acrylate, isooctyl acrylate, 2-ethylhexyl acrylate, dodecyl acrylate, and acrylic acid. An oxime ester or a monomer having a carbon number of 5 or less and having a monomeric pentyl acrylate, n-butyl acrylate, isobutyl acrylate, ethyl acrylate, methyl acrylate, or the like methacrylate .

In addition, the component having a carbon number of 6 or more in the alkyl chain of the monomer (A1-1) is excellent in pick-up property because the peeling force of the adhesive layer and the adhesive layer can be reduced. Moreover, the composition of 12 or less has a low modulus of elasticity at room temperature, and the adhesive force at the interface between the adhesive layer and the adhesive layer is Words are excellent. When the adhesion between the adhesive layer and the adhesive layer is high, when the tape is expanded and the wafer is cut, the interface between the adhesive layer and the adhesive layer can be suppressed from shifting and the cutting property is improved. good.

Further, as the monomer (A1-1), since the glass transition temperature is lower as the monomer having a larger carbon number of the alkyl chain is used, it is possible to prepare a glass transition temperature having a desired glass by appropriately selecting it. Adhesive composition. Further, in order to enhance various properties such as glass transition temperature and compatibility, a low molecular compound having a carbon-carbon double bond such as vinyl acetate, styrene or acrylonitrile can be blended. In this case, the low molecular weight compound is formulated in a range of 5 mass% or less based on the total mass of the monomer (A1-1).

On the other hand, examples of the functional group of the monomer (A1-2) include a carboxyl group, a hydroxyl group, an amine group, a cyclic acid anhydride group, an epoxy group, and an isocyanate group, and the monomer (A1-2). Specific examples thereof include acrylic acid, methacrylic acid, cinnamic acid, itaconic acid, fumaric acid, citric acid, 2-hydroxyalkyl acrylate, 2-hydroxyalkyl methacrylate, and diol monoacrylate. , diol monomethacrylate, N-methylol acrylamide, N-methylol methacrylamide, allyl alcohol, N-alkylaminoethyl acrylate, methacrylic acid N- Alkylaminoethyl ester, acrylamide, methacrylamide, maleic anhydride, anhydrous itaconic acid, fumaric anhydride, phthalic anhydride, glycidyl acrylate, methacrylic acid methacrylate Ester, allyl epoxypropyl ether, and the like.

In the case where the functional group of (A1) is a carboxyl group or a cyclic acid anhydride group, the compound (A2) may, for example, be a hydroxyl group, an epoxy group, an isocyanate group or the like, or a hydroxyl group. Can give a ring In the case of an acid group, an epoxy group, an isocyanate group, etc., and a carboxyl group, a carboxyl group, a cyclic acid anhydride group, an amine group, etc. are mentioned, and a specific example is mentioned. Specific examples of the monomer (A1-2) are the same. Further, as the compound (A2), a part of the isocyanate group of the polyisocyanate compound can be urethanized using a monomer having a hydroxyl group, a carboxyl group, and an energy ray-curable carbon-carbon double bond.

Further, in the reaction of the compound (A1) with the compound (A2), it is possible to produce a desired product relating to characteristics such as an acid value or a hydroxyl value by leaving an unreacted functional group. When the OH group remains in the polymer (A) so that the hydroxyl value is 5 to 100, the risk of pickup failure can be further reduced by reducing the adhesion after the energy ray irradiation.

In addition, when the COOH group is left as the acid value of the polymer (A) is 0.5 to 30, it is preferable to expand the tape for semiconductor processing of the present invention to obtain an effect of improving the adhesive layer after the restoration. When the hydroxyl value of the polymer (A) is 5 or more, it is excellent in the effect of reducing the adhesion after the energy ray irradiation, and in the case of 100 or less, the fluidity of the adhesive after the energy ray irradiation is It is excellent. Further, when the acid value is 0.5 or more, it is excellent in tape restorability; when it is 30 or less, it is excellent in fluidity of the adhesive.

In the synthesis of the polymer (A), as the organic solvent in the reaction at the time of solution polymerization, a ketone system, an ester system, an alcohol system, or an aromatic group can be used, and in particular, toluene, ethyl acetate, or isopropyl alcohol. Ordinary acrylic polymer such as benzyl celecoxib, ethyl sirolius, acetone, methyl ethyl ketone A good solvent and a solvent having a boiling point of 60 to 120 ° C are preferred. As the polymerization initiator, an organic peroxide such as an azo double system such as α,α'-azobisisobutyronitrile or a benzamidine peroxide is usually used. A free radical generator such as a system. In this case, the polymer (A) having a desired molecular weight can be obtained by adjusting the polymerization temperature and the polymerization time by using a catalyst or a polymerization inhibitor as necessary. Further, in order to adjust the molecular weight, a conventional solvent such as a mercaptan or a carbon tetrachloride system and a chain transfer agent are preferably used. Further, the reaction is not limited by solution polymerization, and may be another method such as bulk polymerization or suspension polymerization.

When the polymer (A) is obtained as described above, in the present invention, when the molecular weight of the polymer (A) is 300,000 or more, the cohesive strength is excellent. If the cohesive force is high, there is an effect of suppressing the offset at the interface with the adhesive layer when expanding, and the stretching force is easily transmitted to the adhesive layer, which is preferable in terms of improving the segmentation property of the adhesive layer. . When the molecular weight of the polymer (A) is 2,000,000 or less, it is excellent in suppressing gelation at the time of synthesis and coating. Moreover, the molecular weight of the present invention means a mass average molecular weight in terms of polystyrene.

Moreover, the resin processing tape 10 of the present invention constitutes a resin composition of the adhesive layer 12, and may further have a compound (B) which functions as a crosslinking agent in addition to the polymer (A). For example, polyisocyanates, melamine can be mentioned. Formaldehyde resin and epoxy resin can be used individually or in combination of 2 or more types. The compound (B) is reacted with the polymer (A) or the base film, and as a result, the crosslinked structure can be used to enhance the use of the polymers (A) and (B) after the adhesive composition is applied. The cohesive force of the adhesive of the main component.

The polyisocyanate is not particularly limited, and examples thereof include 4,4'-diphenylmethane diisocyanate, toluene diisocyanate, benzodimethyl diisocyanate, and 4,4'-diphenyl ether diisocyanate. , aromatic isocyanate such as 4'-[2,2-bis(4-phenoxyphenyl)propane] diisocyanate, hexamethylene diisocyanate, 2,2,4-trimethyl-hexamethylene Diisocyanate, isophorone diisocyanate, 4,4'-dicyclohexylmethane diisocyanate, 2,4'-dicyclohexylmethane diisocyanate, isocyanuric acid diisocyanate, isocyanuric acid triisocyanate, etc., specifically CORONATE L (manufactured by Japan POLYURETHANE AG, trade name) can be used. As melamine. Specific examples of the formaldehyde resin include Nikalac MX-45 (manufactured by Sanwa Chemical Co., Ltd., trade name), Melan (manufactured by Hitachi Chemical Co., Ltd., trade name), and the like. As the epoxy resin, TETRAD-X (manufactured by Mitsubishi Chemical Corporation, trade name) or the like can be used. In the present invention, it is particularly preferred to use a polyisocyanate.

The amount of the compound (B) to be added is 0.1 part by mass or more based on 100 parts by mass of the polymer (A), and is excellent in cohesive strength. It is preferably 0.5 parts by mass or more. In addition, the adhesive layer of 15 parts by mass or less is excellent in the gelation which is imminently applied during the application, and the workability such as preparation and application of the adhesive is good. It is preferably 5 parts by mass or less.

Further, in the present invention, the adhesive layer 12 may contain a photopolymerization initiator (C). The photopolymerization initiator (C) contained in the adhesive layer 12 is not particularly limited, and those previously known can be used. For example, diphenyl ketone, 4, 4'-dimethylamino diphenyl ketone, 4, 4'-diethylamino diphenyl ketone, 4, 4'- dichloro diphenyl ketone, etc. are mentioned. Acetones such as diphenylketones, acetophenones and diethoxyacetophenones, anthraquinones such as 2-ethylhydrazine and tert-butylhydrazine, 2-chloro 9-oxosulfur , benzoin ethyl ether, benzoin isopropyl ether, diphenylethylenedione (benzil), 2,4,5-triarylimidazole dimer (octyl dimer), acridine compound, etc. The system can be used alone or in combination of two or more types. The amount of the photopolymerization initiator (C) to be added is preferably 0.1 parts by mass or more, more preferably 0.5 parts by mass or more, based on 100 parts by mass of the polymer (A). Further, the upper limit is preferably 10 parts by mass or less, and more preferably 5 parts by mass or less.

Further, in the energy ray-curable adhesive used in the present invention, an adhesion-imparting agent, an adhesive preparation, a surfactant, or the like, or another modifier can be prepared as necessary. Further, an inorganic compound filler may be added as appropriate.

The adhesive layer 12 can be formed by a method of forming a prior adhesive layer. For example, a method of forming the above-described adhesive composition on a predetermined surface of the base film 11; and applying the above-mentioned adhesive composition to a separator (for example, a plastic coated with a release agent) After the adhesive layer 12 is formed on a film or a sheet, the adhesive layer 12 is transferred to a predetermined surface of the substrate; and the adhesive layer 12 is formed on the substrate film 11. Further, the adhesive layer 12 may have a single layer form or may have a form in which it is laminated.

The thickness of the adhesive layer 12 is not particularly limited, and when the thickness is 2 μm or more, it is excellent in terms of adhesive strength, and preferably 5 μm or more. When it is 15 μm or less, it has excellent pick-up property, and preferably 10 μm or less.

<Binder layer>

In the tape for semiconductor processing 10 of the present invention, the adhesive layer 13 is bonded to the wafer, and after the dicing, the wafer is peeled off from the adhesive layer 12 and adhered to the wafer. Moreover, it is used as an adhesive when the wafer is fixed to the substrate and the lead frame.

The coating layer 13 is not particularly limited as long as it is a film-like adhesive which is usually used for a wafer, and examples thereof include a thermoplastic resin and a thermally polymerizable component. The thermoplastic resin used in the adhesive layer 13 of the present invention is preferably a resin having thermoplasticity or a resin having thermoplasticity in an uncured state and forming a crosslinked structure after heating, and is not particularly limited as a resin. The thermoplastic resin may be a weight average molecular weight of 5,000 to 200,000 and a glass transition temperature of 0 to 150 °C. Further, as another aspect, a thermoplastic resin having a weight average molecular weight of 100,000 to 1,000,000 and a glass transition temperature of -50 to 20 ° C is exemplified.

Examples of the thermoplastic resin of the former include a polyimide resin, a polyamide resin, a polyether quinone resin, a polyamide amide resin, a polyester resin, a polyester phthalimide resin, and a phenoxy group. Base resin, polyfluorene resin, polyether oxime resin, polyphenylene sulfide resin, polyether ketone resin, etc., especially using polyimine resin, phenoxy resin as the thermoplastic resin of the latter It is preferred to use a polymer having a functional group.

The polyimine resin can be obtained by a condensation reaction of a tetracarboxylic dianhydride and a diamine by a conventional method. That is, in the organic solvent, the tetracarboxylic dianhydride and the diamine are used in the form of a molar or substantially molar (the order of addition of the components is arbitrary), and the reaction temperature is 80 ° C or lower, preferably 0 to 60. °C makes Its addition reaction. As the reaction proceeds, the viscosity of the reaction solution gradually rises and the polyamine of the precursor of the polyimide is formed. The polyamic acid can also be adjusted to have a molecular weight by depolymerization by heating at a temperature of 50 to 80 °C. The polyimine resin can be obtained by dehydrating and ring-closing the above-mentioned reactant (polyglycine). The dehydration ring closure can be carried out by a thermal ring closure method using heat treatment or a chemical ring closure method using a dehydrating agent.

The tetracarboxylic dianhydride used as a raw material of the polyimine resin is not particularly limited, and for example, 1,2-(extended ethyl) bis(trimellitate anhydride), 1,3-( Trimethylene)bis(trimellitic anhydride), 1,4-(tetramethylene)bis(trimellitic anhydride), 1,5-(pentamethylene)bis(trimellitic anhydride), 1,6-(hexamethylene) double (trimellitic anhydride), 1,7-(heptylene)bis(trimellitic anhydride), 1,8-(octamethylene)bis(trimellitic anhydride), 1,9-(nonamethylene)bis(trimellitic anhydride), 1 , 10-(decamethylene)bis(trimellitic anhydride), 1,12-(dodecyl)bis(trimellitic anhydride), 1,16-(hexamethylene)bis(trimellitic anhydride), 1,18- (octadecyl)bis(trimellitic anhydride), pyrogallanoic dianhydride, 3,3',4,4'-biphenyltetracarboxylic dianhydride, 2,2',3,3'-biphenyl Tetracarboxylic dianhydride, 2,2-bis(3,4-dicarboxyphenyl)propane dianhydride, 2,2-bis(2,3-dicarboxyphenyl)propane dianhydride, 1,1-double (2,3-dicarboxyphenyl)ethane dianhydride, 1,1-bis(3,4-dicarboxyphenyl)ethane dianhydride, bis(2,3-dicarboxyphenyl)methane dianhydride, Bis(3,4-dicarboxyphenyl)methane dianhydride, bis(3,4-dicarboxyphenyl)anthracene Dihydride, 3,4,9,10-decanetetracarboxylic dianhydride, bis(3,4-dicarboxyphenyl)ether dianhydride, benzene-1,2,3,4-tetracarboxylic dianhydride, 3 , 4,3',4'-diphenyl ketone tetracarboxylic dianhydride, 2,3,2',3'-diphenyl ketone tetracarboxylic dianhydride, 3,3,3',4'-di Phenyl ketone tetracarboxylic dianhydride, 1,2,5,6-naphthalenetetracarboxylic dianhydride, 1,4,5,8-naphthalenetetracarboxylic dianhydride, 2,3,6,7-naphthalenetetracarboxylic acid Acid dianhydride, 1,2,4,5-naphthalenetetracarboxylic dianhydride, 2,6-dichloronaphthalene-1,4,5,8-tetracarboxylic dianhydride, 2,7-dichloronaphthalene-1,4,5 , 8-tetracarboxylic dianhydride, 2,3,6,7-tetrachloronaphthalene-1,4,5,8-tetracarboxylic dianhydride, phenanthrene-1,8,9,10-tetracarboxylic dianhydride , pyrazine-2,3,5,6-tetracarboxylic dianhydride, thiophene-2,3,5,6-tetracarboxylic dianhydride, 2,3,3',4'-biphenyltetracarboxylic acid Dihydride, 3,4,3',4'-biphenyltetracarboxylic dianhydride, 2,3,2',3'-biphenyltetracarboxylic dianhydride, bis(3,4-dicarboxybenzene) Dimethyl decane dianhydride, bis(3,4-dicarboxyphenyl)methylphenyl decane dianhydride, bis(3,4-dicarboxyphenyl)diphenyl phthalane dianhydride, 1,4- Bis(3,4-dicarboxyphenyldimethyl decyl) phthalic anhydride, 1,3-bis(3,4-dicarboxyphenyl)-1,1,3,3-tetramethylbicyclohexane Alkane dianhydride, p-phenylene bis(trimellitic anhydride), ethyltetracarboxylic dianhydride, 1,2,3,4-butanetetracarboxylic dianhydride, tetrahydronaphthalene-1,4,5,8- Tetracarboxylic dianhydride, 4,8-dimethyl-1,2,3,5,6,7-hexahydronaphthalene-1,2,5,6-tetracarboxylic dianhydride, cyclopentane-1, 2,3,4-tetracarboxylic dianhydride, pyrrolidine-2,3,4,5-tetracarboxylic dianhydride, 1,2,3,4-cyclobutane tetracarboxylic dianhydride, double (external -bicyclo[2,2,1]heptane-2,3-dicarboxylic dianhydride, bicyclo-[2,2,2]-octyl -7-ene-2,3,5,6-tetracarboxylic dianhydride, 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride, 2,2-bis[4-(3 , 4-dicarboxyphenyl)phenyl]hexafluoropropane dianhydride, 4,4'-bis(3,4-dicarboxyphenoxy)diphenyl sulfide dianhydride, 1,4-bis(2- Hydroxy hexafluoroisopropyl)benzenebis(1,2,4-benzenetricarboxylic anhydride), 1,3-bis(2-hydroxyhexafluoroisopropyl)benzenebis(1,2,4-benzenetricarboxylic anhydride), 5-(2,5-dioxotetrahydrofuranyl)-3-methyl-3-cyclohexene-1,2-dicarboxylic dianhydride, tetrahydrofuran-2,3,4,5-tetracarboxylic dianhydride In this case, one type or two or more types can be used in combination.

Further, the diamine which is a raw material of the polyimine is not particularly limited, and for example, o-phenylenediamine, m-phenylenediamine, p-phenylenediamine, and 3,3'-diamino group can be used. Diphenyl ether, 3,4'-diaminodiphenyl ether, 4,4'-diaminodiphenyl ether, 3,3'-diaminodiphenylmethane, 3,4'-diaminodiphenylmethane, 4,4'-diaminodiphenyl Ether methane, bis(4-amino-3,5-dimethylphenyl)methane, bis(4-amino-3,5-diisopropylphenyl)methane, 3,3'-diamino Diphenyldifluoromethane, 3,4'-diaminodiphenyldifluoromethane, 4,4'-diaminodiphenyldifluoromethane, 3,3'-diaminodiphenylanthracene, 3,4'-diaminodiphenylanthracene, 4,4'-diaminodiphenylanthracene, 3,3'-diaminodiphenyl sulfide, 3,4'-diaminodiphenyl Thiol, 4,4'-diaminodiphenyl sulfide, 3,3'-diaminodiphenyl ketone, 3,4'-diaminodiphenyl ketone, 4,4'-di Aminodiphenyl ketone, 2,2-bis(3-aminophenyl)propane, 2,2'-(3,4'-diaminodiphenyl)propane, 2,2-bis(4-amine Phenyl)propane, 2,2-bis(3-aminophenyl)hexafluoropropane, 2,2-(3,4'-diaminodiphenyl)hexafluoropropane, 2,2-bis(4- Amine phenyl) hexafluoropropane, 1,3-bis(3-aminophenoxy)benzene, 1,4-bis(3-aminophenoxy)benzene, 1,4-bis(4-amino group) Phenoxy)benzene, 3,3'-(1,4-phenylphenylbis(1-methylethylidene))diphenylamine, 3,4'-(1,4-phenylenebis(1-methylethylidene))diphenylamine, 4,4'-(1,4-phenylenebis(1-methylethylidene) Diphenylamine, 2,2-bis(4-(3-aminophenoxy)phenyl)propane, 2,2-bis(4-(4-aminophenoxy)phenyl)propane, 2, 2-bis(4-(3-aminophenoxy)phenyl)hexafluoropropane, 2,2-bis(4-(4-aminophenoxy)phenyl)hexafluoropropane, bis(4- (3-Aminophenoxy)phenyl) sulfide, bis(4-(4-aminophenoxy)phenyl) sulfide, bis(4-(3-aminophenoxy)phenyl) An aromatic diamine such as bismuth, bis(4-(4-aminophenoxy)phenyl)anthracene or 3,5-diaminobenzoic acid, 1,2-diaminoethane, 1,3- Diaminopropane, 1,4-diaminobutane, 1,5-diaminopentane, 1,6-diaminohexane, 1,7-diaminoheptane, 1,8-di Aminooctane, 1,9-diaminodecane, 1,10-diaminodecane, 1,11-diaminoundecane, 1,12-diaminododecane, 1,2 -diaminocyclohexane, the following general formula (1) Diamine-based polyoxane, 1,3-bis(aminomethyl)cyclohexane, JEFFAMINE D-230, D-400, D-2000, D-4000, ED-600 manufactured by SUN TECHNO CHEMICAL Co., Ltd. And an aliphatic diamine such as a polyoxyalkylene diamine such as ED-900, ED-2001 or EDR-148, which may be used alone or in combination of two or more. The glass transition temperature of the polyimine resin is preferably 0 to 200 ° C, and the weight average molecular weight is preferably 10,000 to 200,000.

(wherein R ₁ and R ₂ each represent a divalent hydrocarbon group having 1 to 30 carbon atoms, and each of them may be the same or different, and R ₃ and R _{4 each} represent a monovalent hydrocarbon group, and each may be the same or different, and m is 1 or more. Integer).

In addition to the above, a phenoxy resin which is one of the preferred thermoplastic resins is a resin obtained by a method of reacting various bisphenols with epichlorohydrin or a method of reacting a liquid epoxy resin with bisphenol. Preferably, examples of the bisphenol include bisphenol A, bisphenol bisphenol AF, bisphenol AD, bisphenol F, and bisphenol S. Since the phenoxy resin is similar in structure to the epoxy resin, it has good compatibility with the epoxy resin and is suitable for imparting good adhesion to the adhesive film.

The phenoxy resin to be used in the present invention is, for example, a resin having a repeating unit represented by the following formula (2).

General formula (2)

In the above formula (2), X represents a single bond or a divalent linking group. The divalent linking group may, for example, be an alkyl group, a phenyl group, a -O-, -S-, -SO- or -SO ₂ -. Here, the alkylene group is preferably an alkylene group having 1 to 10 carbon atoms, and more preferably -C(R ₅ )(R ₆ )-. R ₅ and R ₆ are each a hydrogen atom or an alkyl group, and the alkyl group is preferably a linear or branched alkyl group having 1 to 8 carbon atoms, and examples thereof include a methyl group, an ethyl group, and a n-propyl group. Isopropyl, isooctyl, 2-ethylhexyl, 1,3,3-trimethylbutyl and the like. Further, the alkyl group may be substituted by a halogen atom, and examples thereof include a trifluoromethyl group. X is preferably an alkyl group, -O-, -S-, fluorenyl or -SO ₂ -, and an alkyl group or -SO ₂ - is preferred. In particular, -C(CH ₃ ) ₂ -, -CH(CH ₃ )-, -CH ₂ -, -SO ₂ - is preferred, and -C(CH ₃ ) ₂ -, -CH(CH ₃ )-, -CH ₂ - is preferred, and -C(CH ₃ ) ₂ - is particularly preferred.

When the phenoxy resin represented by the above formula (2) has a repeating unit, it may be a resin having a plurality of repeating units in which X of the above formula (2) is different, or may be a repeating unit in which only X is the same Composition. In the present invention, it is preferred to use a resin composed only of repeating units in which X is the same.

In addition, when the phenoxy resin represented by the above formula (2) contains a polar substituent such as a hydroxyl group or a carboxyl group, the compatibility with the thermopolymerizable component is improved, and a uniform appearance and characteristics can be imparted.

When the mass average molecular weight of the phenoxy resin is 5,000 or more, it is excellent in film formability. More preferably 10,000 or more, more preferably It is 30,000 or more.

Further, when the mass average molecular weight is 150,000 or less, it is preferred in terms of fluidity at the time of heat press bonding and compatibility with other resins. It is preferably 100,000 or less. Further, when the glass transition temperature is -50 ° C or more, the film formability is excellent, and is preferably 0 ° C or higher, more preferably 50 ° C or higher. When the glass transition temperature is 150 ° C, the adhesion of the adhesive layer 13 at the time of die bonding is excellent, and is preferably 120 ° C or lower, more preferably 110 ° C or lower.

On the other hand, examples of the functional group of the polymer containing the functional group include a glycidyl group, an acrylonitrile group, a methacryl group, a hydroxyl group, a carboxyl group, an isomeric cyanate group, and an amine group. , amidino group and the like, especially a glycidyl group.

The high molecular weight component containing the above functional group may, for example, be a (meth)acryl fluorenyl copolymer containing a functional group such as a glycidyl group, a hydroxyl group or a carboxyl group.

As the (meth) acrylonitrile-based copolymer, for example, a (meth) acrylonitrile-based copolymer, an acryl rubber, or the like can be used, and an acrylic rubber is preferable. The acrylic rubber is mainly composed of a copolymer of butyl acrylate and acrylonitrile, a copolymer of acrylate and acrylonitrile, and the like, and an acrylate.

When the epoxy group is contained as a functional group, the amount of the repeating unit containing a glycidyl group is preferably 0.5 to 6.0% by weight, preferably 0.5 to 5.0% by weight, more preferably 0.8 to 5.0% by weight. . The repeating unit containing a glycidyl group is a constituent monomer containing a (meth)acrylonitrile-based copolymer of a glycidyl group, specifically, glycidyl acrylate or glycidyl methacrylate. When the amount of the repeating unit containing a glycidyl group is in this range, gelation can be prevented while securing the adhesion.

Examples of the constituent monomer of the above (meth) acrylonitrile-based copolymer other than glycidyl acrylate or glycidyl methacrylate include ethyl (meth)acrylate and butyl (meth)acrylate. These may be used alone or in combination of two or more types. Further, in the present invention, the ethyl (meth)acrylate means ethyl acrylate and/or ethyl methacrylate. The mixing ratio when the functional monomers are used in combination may be determined in consideration of the glass transition temperature of the (meth) acrylonitrile-based copolymer. When the glass transition temperature is -50 ° C or more, it is preferable because it has excellent film formability and can suppress excessive viscosity at room temperature. When the viscous force at room temperature is excessive, the operation of the adhesive layer becomes difficult. It is preferably -20 ° C or higher, more preferably 0 ° C or higher. Moreover, when the glass transition temperature is 30 ° C or less, the adhesion of the adhesive layer at the time of die bonding is excellent, and it is preferably 20 ° C or less.

When the monomer is polymerized to produce a high molecular weight component containing a functional monomer, the polymerization method is not particularly limited. For example, a method such as a particulate polymerization or a solution polymerization can be used, and particularly, a particulate polymerization is preferred.

In the present invention, when the weight average molecular weight of the high molecular weight component containing a functional monomer is 100,000 or more, it is excellent in film formability, and is preferably 200,000 or more, and more preferably 500,000 or more. Moreover, when the weight average molecular weight is adjusted to 2,000,000 or less, it is excellent in the improvement of the heating fluidity of the adhesive layer at the time of die bonding. When the heating fluidity of the adhesive layer is increased when the die is bonded, the adhesive layer is followed by The adhesion of the body becomes good, and the adhesion can be improved, and it is easy to fill the unevenness of the adherend and suppress the void. It is preferably 1,000,000 or less, more preferably 800,000 or less, and when it is 500,000 or less, a larger effect can be obtained.

Further, the thermal polymerizable component is not particularly limited as long as it is polymerized by heat, and examples thereof include a glycidyl group, a propylene group, a methacryl group, a hydroxyl group, a carboxyl group, and an isocyanurate. A compound of a functional group such as a group, an amine group or a guanamine group, and a triggering material, which can be used alone or in combination of two or more types, and in consideration of heat resistance as an adhesive layer, it is simultaneously cured by heat. It is preferred to use a thermosetting resin, a hardener, and an accelerator for the purpose of the work. Examples of the thermosetting resin include an epoxy resin, an acrylic resin, an anthrone resin, a phenol resin, a thermosetting polyimide resin, a polyurethane resin, a melamine resin, a urea resin, etc., in particular, It is preferable to use an epoxy resin in order to obtain an adhesive layer which has excellent heat resistance, workability, and reliability.

The above-mentioned epoxy resin is not particularly limited as long as it is cured, and a bifunctional epoxy resin such as bisphenol A epoxy resin, a phenol novolak epoxy resin, or a cresol novolak ring can be used. A novolac type epoxy resin such as an oxygen resin. Further, a conventionally known product such as a polyfunctional epoxy resin, a glycidylamine epoxy resin, or a heterocyclic epoxy resin or an alicyclic epoxy resin can be used.

Examples of the above bisphenol A type epoxy resin include EPICOAT series (EPICOAT807, EPICOAT815, EPICOAT825, EPICOAT827, EPICOAT828, EPICOAT834, and the like) manufactured by Mitsubishi Chemical Corporation. EPICOAT1001, EPICOAT1004, EPICOAT1007, EPICOAT1009), manufactured by Dow Chemical Co., Ltd., DER-330, DER-301, DER-361, and Nippon Steel & Metal Chemical Co., Ltd., YD8125, YDF8170, etc. Examples of the phenol novolak-type epoxy resin include EPICOAT 152, EPICOAT 154 manufactured by Mitsubishi Chemical Corporation, EPPN 0.001 manufactured by Nippon Chemical Co., Ltd., DEN-438 manufactured by Dow Chemical Co., Ltd., and the like. O-cresol novolac type epoxy resin, EOCN-102S, EOCN-103S, EOCN-104S, EOCN-1012, EOCN-1025, EOCN-1027, Nippon Steel & Sumitomo Chemical Co., Ltd., manufactured by Nippon Kayaku Co., Ltd. Company system, YDCN701, YDCN702, YDCN703, YDCN704, etc. Examples of the above polyfunctional epoxy resin include Epon 1031S and CIBA manufactured by Mitsubishi Chemical Corporation. SPECIALTY. ARALDITE 0163 manufactured by CHEMICALS, DENACOL EX-611, EX-614, EX-614B, EX-622, EX-512, EX-521, EX-421, EX-411, EX-321, etc., manufactured by NAGASE CHEMTEX Co., Ltd. . Examples of the above-mentioned amine-type epoxy resin include EPICOAT604 manufactured by Mitsubishi Chemical Corporation, YH-434 manufactured by Tohto Kasei Co., Ltd., TETRAD-X and TETRAD-C manufactured by Mitsubishi Gas Chemical Co., Ltd., and Sumitomo Chemical Industries Co., Ltd. ELM-120 and so on.

As the above heterocyclic ring contains epoxy resin, CIBA. SPECIALTY. ARALDITE PT810 manufactured by CHEMICALS, ERL4234, ERL4299, ERL4221, ERL4206 manufactured by UCC Corporation. These epoxy resins can be used singly or in combination of two or more types.

In order to cure the above thermosetting resin, an appropriate additive can also be added. Examples of such an additive include a curing agent, a curing accelerator, and a catalyst. When a catalyst is added, a catalyst can be used as necessary.

When an epoxy resin is used as the thermosetting resin, it is preferred to use an epoxy resin curing agent or a curing accelerator, and it is preferred to use them in combination. Examples of the curing agent include a phenol resin, a cyanogenic hydrazine, a boron trifluoride compound, an organic hydrazine compound, an amine, a polyamide resin, an imidazole compound, a urea or a thiourea compound, a polythiol compound, and an end group. a polythioether resin having a hydrogenthio group, an acid anhydride, and light. UV hardener. These can be used individually or in combination of 2 or more types.

In addition, examples of the boron trifluoride compound include a boron trifluoride-amine complex compound with various amine compounds (preferably a first-order amine compound), and examples of the organic ruthenium compound include isophthalic acid Hey.

Examples of the phenol resin include a novolac type phenol resin such as a phenol novolak resin, a phenol aralkyl resin, a cresol novolak resin, a third butyl phenol novolak resin, and a nonylphenol novolak resin, and are soluble. A polyoxystyrene such as a novolac type phenol resin or polyparaxyl styrene. In particular, a phenolic compound having at least two phenolic hydroxyl groups in the molecule is preferred.

Examples of the phenolic compound having at least two phenolic hydroxyl groups in the above molecule include a phenol novolak resin, a cresol novolak resin, a third butyl phenol novolak resin, and a dicyclopentadiene cresol novolac resin. Resin, dicyclopentadiene phenol novolak resin, thiol-modified phenol Novolac resin, naphthol novolak resin, phenol novolac resin, phenol phenol novolak resin, bisphenol A novolak resin, poly-p-vinyl phenol resin, phenol aralkyl resin, and the like. Further, among these phenol resins, a phenol novolak resin or a phenol aralkyl resin is particularly preferable, and continuous reliability can be improved.

As the amine, a chain aliphatic amine (diethylenetriamine, triethylenetetramine, hexamethylenediamine, N,N-dimethylpropylamine, benzyldimethylamine, 2-(II) can be exemplified. Methylamino)phenol, 2,4,6-gin (dimethylaminomethyl)phenol, m-xylenediamine, etc.), cyclic aliphatic amine (N-amine ethylpiperazine, bis (3-methyl) 4-aminocyclohexyl)methane, bis(4-aminocyclohexyl)methane, Diamine (menthene diamine), isophorone diamine, 1,3-bis(aminomethyl)cyclohexane, etc., heterocyclic amine (piperazine, N,N-dimethylpiperazine, triethylene) Amine, melamine, guanamine, etc.), aromatic amines (m-phenylenediamine, 4,4'-diaminodiphenylmethane, diamine, 4,4'-diaminodiphenylanthracene, etc.), Polyamide resin (polyamidoamine is preferred, condensate of dimer acid and polyamine), imidazole compound (2-phenyl-4,5-dimethylolimidazole, 2-methylimidazole, 2,4 - dimethylimidazole, 2-n-heptadecylimidazole, 1-cyanoethyl-2-undecylimidinium, trimelitate, epoxy resin, imidazole adduct, etc., urea or Thiourea compound (N,N-dialkylurea compound, N,N-dialkylthiourea compound, etc.), polythiol compound, polythioether resin having a hydrogenthio group at the terminal, acid anhydride (tetrahydrophthalic anhydride) Etc.), light. Ultraviolet curing agent (diphenyliodonium hexafluorophosphate, triphenylsulfonium hexafluorophosphate, etc.).

The hardening accelerator is not particularly limited as long as it cures the thermosetting resin, and examples thereof include an imidazole, a cyanogenic derivative, a dicarboxylic acid diterpene, a triphenylphosphine, and a tetraphenylphosphonium tetraphenylphosphonate. 2-ethyl-4-methyl Tetrendazole-tetraphenyl borate, 1,8-diazabicyclo[5.4.0]undecene-7-borate tetraphenyl ester, and the like.

Examples of the imidazoles include imidazole, 2-methylimidazole, 2-ethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, and 1 -benzyl-2-methylimidazole, 1-benzyl-2-ethylimidazole, 1-benzyl-2-ethyl-5-methylimidazole, 2-phenyl-4-methyl-5-hydroxyl Dimethylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, and the like.

The content of the curing agent for the epoxy resin or the curing accelerator in the adhesive layer is not particularly limited, and the optimum content varies depending on the type of the curing agent or the curing accelerator.

The blending ratio of the epoxy resin to the phenol resin is preferably such that the epoxy group in the epoxy resin component is added in an amount of from 0.5 to 2.0 equivalents per equivalent of the epoxy group in the phenol resin. It is preferably from 0.8 to 1.2 equivalents. In other words, when the blending ratio of the two is out of the above range, the curing reaction is not sufficiently performed and the properties of the adhesive layer are easily deteriorated. In another embodiment, the other thermosetting resin and the curing agent are 0.5 to 20 parts by mass with respect to 100 parts by mass of the thermosetting resin, and in other embodiments, the curing agent is 1 to 10 parts by mass. Share. The content of the hardening accelerator is preferably less than the content of the curing agent, and the curing accelerator is preferably 0.001 to 1.5 parts by mass, more preferably 0.01 to 0.95 parts by mass based on 100 parts by mass of the thermosetting resin. . By adjusting to the above range, it is possible to assist in performing a sufficient hardening reaction. The content of the catalyst is preferably 0.001 to 1.5 parts by mass, more preferably 0.01 to 1.0 part by mass, per 100 parts by mass of the thermosetting resin.

Further, the adhesive layer 13 of the present invention can be adapted according to the use thereof. Locally mix the filler. As a result, the adhesiveness of the adhesive layer in an uncured state is improved, the workability is improved, the melt viscosity can be adjusted, and thixotropic properties can be imparted, and the thermal conductivity of the adhesive layer in the cured state can be imparted, and the adhesion can be improved.

As the filler used in the present invention, an inorganic filler is preferred. The inorganic filler is not particularly limited, and for example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium citrate, magnesium citrate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, or aluminum borate crystal can be used. Niobium, boron nitride, crystalline cerium oxide, amorphous cerium oxide, cerium oxide, and the like. Moreover, these types can be used individually or in mixture of 2 or more types.

Further, from the viewpoint of improving the thermal conductivity, among the above inorganic fillers, alumina, aluminum nitride, boron nitride, crystalline cerium oxide, amorphous cerium oxide, or the like is preferably used. Further, in terms of adjusting the melt viscosity and imparting thixotropy, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium citrate, magnesium citrate, calcium oxide, magnesium oxide, aluminum oxide, and crystalline oxidation are used. Bismuth, amorphous yttrium oxide, etc. are preferred. Further, from the viewpoint of improving the cutting property, it is preferred to use alumina or cerium oxide.

When the content ratio of the filler is 30% by mass or more, the wire bonding property is excellent.

In the case of wire bonding, the storage elastic modulus after the wire is placed and the adhesive layer of the wafer is cured is preferably adjusted to a range of 20 to 1000 MPa at 170 ° C, and when the content ratio of the filler is 30% by mass or more, it is easy to The storage elastic modulus after the hardening of the agent layer is adjusted to this range. Moreover, when the content ratio of the filler is 75% by mass or less, it has excellent film formability and crystal grains. Heating fluidity of the adhesive layer at the time of bonding. When the heating fluidity of the adhesive layer is increased during the die bonding, the adhesion between the adhesive layer and the adherend is improved, and the adhesion can be improved, and the unevenness of the adherend can be filled and the void can be easily suppressed. It is preferably 70% by mass or less, more preferably 60% by mass or less.

The adhesive layer of the present invention may contain two or more kinds of fillers having different average particle diameters as the above filler. In this case, when a single filler is used, it is easier to prevent an increase in viscosity when the filler content ratio is higher in the raw material mixture before film formation, or it is easier to prevent a lower viscosity when the filler content ratio is lower, and it is easy to obtain good. The film formation property can control the fluidity of the uncured adhesive layer to be optimal, and an excellent adhesion force can be easily obtained after the adhesive layer is hardened.

Further, the average particle diameter of the filler of the adhesive layer of the present invention is preferably 2.0 μm or less, and more preferably 1.0 μm. When the average particle diameter of the filler is 2.0 μm or less, film formation of the film becomes easy. The film referred to herein is a thickness of 20 μm or less. Moreover, when it is 0.01 micrometer or more, dispersibility is favorable. Further, from the viewpoint of preventing the viscosity of the raw material mixture before the film formation from rising or falling, controlling the fluidity of the uncured adhesive layer to be optimal, and improving the adhesion after the adhesive layer is cured, The first filler having a particle diameter of 0.1 to 1.0 μm and the second filler having an average particle diameter of the primary particle diameter of 0.005 to 0.03 μm are preferred. The first filler having a particle size distribution in the range of 0.1 to 1.0 μm and having a particle diameter of 0.1% to 1.0 μm and the average particle diameter of the primary particle diameter of 0.005 to 0.03 μm are contained in the range of 0.1 to 1.0 μm. In the range, 99% or more of the particles are preferably distributed in the second filler having a particle diameter of 0.005 to 0.1 μm.

The average particle diameter in the present invention means that 50% by volume of the particle system has a D50 value of a cumulative volume distribution curve having a smaller diameter than the value. In the present invention, the average particle diameter or D50 value is determined by a laser diffraction method, for example, using a Malvern Mastersizer 2000 manufactured by Malvern Instruments. In this technique, the particle size in the dispersion is measured based on either of Fraunhofer or Mie theory and using diffraction of laser light. In the present invention, the Mie theory or the modified Mie theory for non-spherical particles is used and the average particle size or D50 value is related to the scattering measurement of incident laser light at 0.02-135.

In the present invention, in one aspect, the thermoplastic composition constituting the adhesive layer 13 may contain 10 to 40% by mass of a thermoplastic resin having a weight average molecular weight of 5,000 to 200,000, and 10 to 40% by mass. The thermal polymerizable component and 30 to 75% by mass of the filler. In this embodiment, the content of the filler may be 30 to 60% by mass, or may be 40 to 60% by mass.

Further, the thermoplastic resin may have a mass average molecular weight of 5,000 to 150,000 or 10,000 to 100,000.

In another aspect, it may contain 10 to 20% by mass of a thermoplastic resin having a weight average molecular weight of 200,000 to 2,000,000 and a thermal polymerization of 20 to 50% by mass based on the entire adhesive composition constituting the adhesive layer 13. Sexual ingredients, and 30 to 75% by mass of filler. In this embodiment, the content of the filler may be 30 to 60% by mass, or may be 30 to 50% by mass. Further, the thermoplastic resin may have a mass average molecular weight of 200,000 to 1,000,000 or 200,000 to 800,000.

The storage elastic modulus after hardening of the adhesive layer 13 by adjusting the blending ratio The fluidity can be optimized, and the heat resistance at a high temperature can be sufficiently obtained.

In the adhesive tape 10 for semiconductor processing of the present invention, the adhesive layer 13 may be formed by directly or indirectly laminating a previously thinned material (hereinafter referred to as a bonding film) on the base film 11. The temperature at the time of lamination is set to a range of 10 to 100 ° C and a linear pressure of 0.01 to 10 N/m is preferably applied. Further, such a bonding film may be formed by forming an adhesive layer 13 on a release film. In this case, a release film may be used after lamination, or a cover film for the semiconductor processing tape 10 may be directly used and Peeling is performed when the wafer is bonded.

The adhesive film may be laminated on the entire surface of the adhesive layer 12, or may be previously cut into a shape of a bonded wafer (pre-cut) and then laminated on the adhesive layer 12. As described above, when the film is laminated on the subsequent film, as shown in FIG. 3, the portion bonded to the wafer W is bonded with the adhesive layer 13, and the portion bonded to the annular frame 20 has no adhesive layer. 13 and only the adhesive layer 12 is present. In general, since the adhesive layer 13 is not easily peeled off from the adherend, the annular frame 20 can be bonded to the adhesive layer 12 by using the pre-cut adhesive film, and when the tape is peeled off after use, it can be obtained. It is easy to produce the effect of the paste residue in the annular frame 20.

<Use>

The semiconductor processing tape 10 of the present invention is used in a method of manufacturing a semiconductor device, and the manufacturing method includes at least an expansion step of breaking the adhesive layer 13 by expansion. Therefore, the other steps, the order of the steps, and the like are not particularly limited. For example, it can be suitably used in the following semiconductor devices Manufacturing method (A) ~ (E).

A method (A) for manufacturing a semiconductor device includes a method of manufacturing a semiconductor device comprising: (a) a step of bonding a surface protective tape to a surface of a wafer on which a circuit pattern is formed; and (b) grinding the back surface of the wafer. a back grinding step; (c) a step of bonding the adhesive layer of the semiconductor processing tape to the back surface of the wafer in a state where the wafer is heated; (d) removing the surface protective tape from the wafer a step of peeling off the surface; (e) irradiating the predetermined portion of the wafer with the laser beam, and forming a modified region inside the wafer by multiphoton absorption; (f) expanding the aforementioned semiconductor processing tape to make the aforementioned a step of expanding the wafer and the adhesive layer of the semiconductor processing tape along the break line to obtain a plurality of wafers with the adhesive layer; (g) borrowing the semiconductor processing tape after expansion The step of removing the portion of the wafer which is not overlapped with the wafer by heat shrinkage to remove the slack generated in the expanding step and maintaining the interval between the wafers; (h) the adhesion of the tape for the semiconductor processing described above Next the pickup adhesive layer with the step of wafer agent layer.

A method of manufacturing a semiconductor device (B) is a method of manufacturing a semiconductor device comprising: (a) a step of bonding a surface protective tape to a surface of a wafer on which a circuit pattern is formed; and (b) grinding the back surface of the wafer. Back grinding step; (c) a step of bonding the adhesive layer of the semiconductor processing tape to the back surface of the wafer in a state where the wafer is heated; (d) a step of peeling the surface protective tape from the surface of the wafer; (e) a step of irradiating the laser light along the break line of the surface of the wafer to break the wafer into a wafer; (f) by expanding the aforementioned semiconductor processing tape, the adhesive layer is separated from each of the foregoing wafers And expanding the plurality of wafers with the adhesive layer; (g) removing the portion of the semiconductor processing tape that has not been overlapped with the wafer by heat shrinkage, and removing the expansion step a step of relaxing and maintaining the interval between the wafers; (h) a step of picking up the wafer with the adhesive layer from the adhesive layer of the semiconductor processing tape.

A method of manufacturing a semiconductor device (C) is a method of manufacturing a semiconductor device comprising: (a) a step of bonding a surface protective tape to a surface of a wafer on which a circuit pattern is formed; and (b) grinding the back surface of the wafer. a back grinding step; (c) a step of bonding the adhesive layer of the semiconductor processing tape to the back surface of the wafer in a state where the wafer is heated; (d) removing the surface protective tape from the wafer a step of peeling the surface; (e) a step of cutting the wafer into a wafer along a break line using a dicing blade; (f) forming the adhesive layer by expanding the tape for semiconductor processing a step of expanding a plurality of wafers with the above-mentioned adhesive layer obtained by dividing each of the above-mentioned wafers; (g) exposing the portion of the semiconductor processing tape after expansion to heat shrinkage of a portion not overlapped with the wafer The step of relaxing the gap generated by the expanding step and maintaining the interval between the wafers; (h) the step of picking up the wafer with the adhesive layer from the adhesive layer of the semiconductor processing tape.

A method of manufacturing a semiconductor device (D) is a method of manufacturing a semiconductor device comprising the steps of: (a) bonding a dicing tape to a back surface of a wafer on which a circuit pattern is formed, and cutting it along a predetermined line by using a dicing blade to a step of less than the depth of the wafer thickness; (b) a step of attaching the surface protective tape to the surface of the wafer; (c) peeling off the dicing tape, and grinding the back surface of the wafer to be broken into wafers a back grinding step; (d) bonding the adhesive layer of the semiconductor processing tape to the back surface of the wafer to be separated into the wafer while the wafer is heated; (e) the surface a step of peeling off the protective tape from the surface of the wafer to be separated into the wafer; (f) by expanding the semiconductor processing tape, the adhesive layer is separated from each of the wafers to obtain the adhesive layer The expansion step of the plurality of wafers; (g) the aforementioned semiconductor processing tape after expansion, by making the a portion of the overlapping portion of the wafer is heated and shrunk to remove the slack generated in the expanding step and to maintain the interval between the wafers; (h) picking up the wafer with the adhesive layer from the adhesive layer of the semiconductor processing tape step.

A method of manufacturing a semiconductor device (E) is a method of manufacturing a semiconductor device comprising: (a) a step of bonding a surface protective tape to a surface of a wafer on which a circuit pattern is formed; and (b) dividing the wafer. a step of irradiating the laser light with a predetermined portion, and forming a modified region inside the wafer by multiphoton absorption; (c) grinding a back surface grinding step of the wafer back surface; (d) in a state where the wafer is heated, a step of bonding the adhesive layer of the tape for semiconductor processing to the back surface of the wafer; (e) a step of peeling the surface protective tape from the surface of the wafer; (f) expanding the surface of the semiconductor processing tape to cause the aforementioned a step of expanding the wafer and the adhesive layer of the semiconductor processing tape along the break line to obtain a plurality of wafers with the adhesive layer; (g) borrowing the semiconductor processing tape after expansion The step of removing the portion of the wafer which is not overlapped with the wafer by heat shrinkage to remove the slack generated in the expanding step and maintaining the interval between the wafers; (h) the adhesion of the tape for the semiconductor processing described above Next step pickup adhesive layer with the adhesive layer of the wafer.

<How to use>

Applying the semiconductor processing tape 10 of the present invention to the above-described semiconductor The method of using the tape in the method of manufacturing the body device (A) will be described with reference to Figs. 2 to 5 . First, as shown in FIG. 2, the surface protection tape 14 for circuit pattern protection containing an ultraviolet curable component in an adhesive is bonded to the surface of the wafer W on which the circuit pattern is formed, and the back surface of the wafer W is ground. Back grinding step.

After the back surface polishing step is completed, as shown in FIG. 3, the wafer W is placed on the heater table 25 of the Wafer Mounter with the surface side facing downward, and the semiconductor processing tape 10 is bonded. On the back side of the wafer W. Here, the used semiconductor processing tape 10 is formed by laminating a film which is cut (pre-cut) in advance according to the shape of the bonded wafer W, and is bonded to the wafer W on the surface. The adhesive layer 12 is exposed around the exposed area of the layer 13. The exposed portion of the adhesive layer 10 of the semiconductor processing tape 10 is bonded to the back surface of the wafer W, and the exposed portion of the adhesive layer 12 around the adhesive layer 13 is bonded to the annular frame 20. At this time, the heater table 25 is set at 70 to 80 ° C to perform heat bonding. Further, in the present embodiment, the adhesive tape 15 having the base film 11 and the adhesive layer 12 provided on the base film 11 and the adhesive layer 13 provided on the adhesive layer 12 are used. The tape 10 for semiconductor processing may be provided by using an adhesive tape and a film-like adhesive, respectively. At this time, first, a film-like adhesive is bonded to the back surface of the wafer to form an adhesive layer, and an adhesive layer of the adhesive tape is bonded to the adhesive layer. At this time, the adhesive tape 15 according to the present invention is used as an adhesive tape.

Next, the wafer W to which the semiconductor processing tape 10 is bonded is carried out from the heater stage 25, and as shown in FIG. 4, the semiconductor processing tape 10 is placed on the adsorption stage 26 with the side facing downward. Then, the substrate surface side of the surface protective tape 14 is irradiated with ultraviolet rays of, for example, 1000 mJ/cm ² from the surface of the substrate W of the surface protective tape 14 by the energy ray source 27, and the surface protective tape 14 is applied to the wafer W. Then, the force is lowered and the surface protective tape 14 is peeled off from the surface of the wafer W.

Next, as shown in FIG. 5, the predetermined portion of the wafer W is irradiated with laser light, and the modified region 32 is formed inside the wafer W by multiphoton absorption.

Next, as shown in FIG. 6(a), the semiconductor processing tape 10 to which the wafer W and the ring frame 20 are bonded is placed on the stage 21 of the expansion device with the base film 11 side facing downward.

Next, as shown in FIG. 6(b), in a state in which the annular frame 20 is fixed, the hollow cylindrical shape push-up member 22 of the expansion device is raised and the semiconductor processing tape 10 is expanded. As the expansion condition, the expansion speed is, for example, 5 to 500 mm/sec, and the expansion amount (upward pushing amount) is, for example, 5 to 25 mm. As described above, the semiconductor processing tape 10 is stretched in the radial direction of the wafer W, and the wafer W is divided into the wafer 34 unit by using the modified region 32 as a starting point. At this time, the elongation (deformation) caused by the expansion of the adhesive layer 13 on the back surface of the wafer W is suppressed without being broken, but at the position between the wafers 34, the tension is concentrated due to the tape expansion and is broken. Therefore, as shown in FIG. 6(c), the adhesive layer 13 is also separated from the wafer W at the same time. Thereby, a plurality of wafers 34 with the adhesive layer 13 attached thereto can be obtained.

Next, as shown in Fig. 7, the push-up member 22 is returned to the original position, and a step of expanding the semiconductor processing tape 10 in the front is performed. The resulting relaxation is removed to maintain the spacing of the wafers 34 stable. In this step, for example, in the region where the wafer 34 of the semiconductor processing tape 10 exists, and the annular heat shrinkage region 28 between the ring frame 20, the base film 11 is brought into contact with the temperature of 90 to 120 ° C using the warm air nozzle 29. The semiconductor processing tape 10 is brought into a tight state by heat and contraction by warm air.

Subsequently, the adhesive layer 12 is subjected to an energy ray hardening treatment or a heat hardening treatment or the like, and the adhesion of the adhesive layer 12 to the adhesive layer 13 is weakened, and then the wafer 34 is picked up.

Further, as described above, it is also preferable to perform the energy ray hardening treatment before performing the expansion processing.

<Example>

Next, in order to clarify the effects of the present invention, the examples and the comparative examples will be described in detail, but the present invention is not limited by the examples.

[Manufacture of tape for semiconductor processing]

(1) Fabrication of substrate film

<Substrate film 1A>

A zinc ion polymer a (density 0.96 g/cm ³ , zinc ion content) of an ethylene-methacrylic acid-ethyl methacrylate (mass ratio 8:1:1) terpolymer synthesized by a radical polymerization method Resin particles having 4% by mass, a chlorine content of less than 1% by mass, a Vicat softening point of 56 ° C, and a melting point of 86 ° C) were formed by melting at 140 ° C and formed into a long film having a thickness of 100 μm using an extruder. To manufacture the base film 1A.

<Substrate film 2A>

A zinc ion polymer b of ethylene-methacrylic acid (mass ratio 7.5:2.5) binary copolymer synthesized by a radical polymerization method (density 0.96 g/cm ³ , zinc ion content 6 mass%, chlorine content less than 1) The resin pellets having a mass %, a Vicat softening point of 65 ° C, and a melting point of 88 ° C) were formed by melting at 140 ° C and forming into a long film having a thickness of 100 μm using an extruder to produce a base film 2A.

<Substrate film 3A>

A zinc ion polymer c of ethylene-methacrylic acid (mass ratio: 9:1) binary copolymer synthesized by a radical polymerization method (density: 0.95 g/cm ³ , zinc ion content: 3 mass%, chlorine content: less than 1) The resin pellets having a mass %, a Vicat softening point of 84 ° C, and a melting point of 102 ° C) were formed by melting at 140 ° C and forming into a long film having a thickness of 100 μm using an extruder to produce a base film 3A.

<Substrate film 4A>

A resin pellet of NOVATEC PP FW4B (polypropylene) (density: 0.90 g/cm ³ , Vicat softening point 96 ° C, melting point: 140 ° C) manufactured by Polychem Co., Ltd., Japan, melted at 180 ° C and extruded The base film 4A was produced by molding into a long film having a thickness of 100 μm.

(2) Modulation of adhesive composition

(Adhesive 1B)

A copolymer comprising 2-ethylhexyl acrylate, 2-hydroxyethyl acrylate and methacrylic acid, and a ratio of 2-ethylhexyl acrylate of 55 mol% and a mass average molecular weight of 750,000, as Functional group acrylic copolymer (A1). Next, 2-isocyanatoethyl methacrylate was added in such a manner that the iodine value was 25, and an acrylic copolymer having a glass transition temperature of -50 ° C, a hydroxyl value of 10 gKOH/g, and an acid value of 5 mgKOH/g was prepared (a- 1).

3 parts by mass based on 100 parts by mass of the acrylic copolymer (a-1) P301-75E (made by Asahi Kasei Chemicals Co., Ltd.) as a mixture of polyisocyanic acid and 3 parts by mass of Esacure KIP 150 (manufactured by Lamberti Co., Ltd.) as a photopolymerization initiator, dissolved in ethyl acetate and stirred to prepare a binder. Agent 1B.

(Adhesive 2B)

A copolymer comprising 2-ethylhexyl acrylate, 2-hydroxyethyl acrylate and methacrylic acid, and a ratio of 2-ethylhexyl acrylate of 55 mol% and a mass average molecular weight of 750,000, as a functional group The acrylic copolymer (A2). Next, 2-isocyanatoethyl methacrylate was added in such a manner that the iodine value was 20, and an acrylic copolymer having a glass transition temperature of -50 ° C, a hydroxyl value of 15 gKOH/g, and an acid value of 5 mgKOH/g was prepared (a- 2).

To 100 parts by mass of the acrylic copolymer (a-2), 3 parts by mass of P301-75E (manufactured by Asahi Kasei Chemical Co., Ltd.) was added as a polyisocyanate, and 3 parts by mass of Esacure KIP 150 (manufactured by Lamberti Co., Ltd.) was added as a photopolymerization. The mixture of the starting agent was dissolved in ethyl acetate and stirred to prepare the adhesive 2B.

(Adhesive 3B)

A copolymer comprising 2-ethylhexyl acrylate, 2-hydroxyethyl acrylate and methacrylic acid, and a ratio of 2-ethylhexyl acrylate of 55 mol% and a mass average molecular weight of 750,000, as a functional group The acrylic copolymer (A3). Next, 2-isocyanatoethyl methacrylate was added in such a manner that the iodine value was 15, and an acrylic copolymer having a glass transition temperature of -50 ° C, a hydroxyl value of 20 gKOH/g, and an acid value of 5 mgKOH/g was prepared (a- 3).

3 parts by mass based on 100 parts by mass of the acrylic copolymer (a-3) P301-75E (made by Asahi Kasei Chemicals Co., Ltd.) as a mixture of polyisocyanate and 3 parts by mass of Esacure KIP 150 (manufactured by Lamberti Co., Ltd.) as a photopolymerization initiator, dissolved in ethyl acetate and stirred to prepare an adhesive 3B .

(Adhesive 4B)

A copolymer comprising 2-ethylhexyl acrylate, 2-hydroxyethyl acrylate and methacrylic acid, and a ratio of 2-ethylhexyl acrylate of 55 mol% and a mass average molecular weight of 750,000, as a functional group The acrylic copolymer (A4). Next, 2-isocyanatoethyl methacrylate was added in such a manner that the iodine value was 5, and an acrylic copolymer having a glass transition temperature of -50 ° C, a hydroxyl value of 30 gKOH/g, and an acid value of 5 mgKOH/g was prepared (a- 4).

To 100 parts by mass of the acrylic copolymer (a-4), 3 parts by mass of P301-75E (manufactured by Asahi Kasei Chemical Co., Ltd.) was added as a polyisocyanate, and 3 parts by mass of Esacure KIP 150 (manufactured by Lamberti Co., Ltd.) was added as a photopolymerization. The mixture of the starting agent was dissolved in ethyl acetate and stirred to prepare the adhesive 4B.

(3) Manufacture of adhesive sheets

The adhesive of 1B to 4B was applied to a release liner composed of a release-treated polyethylene-paraternet film so as to have a thickness of 10 μm after drying, and dried at 110 ° C for 2 minutes. The base film of 1A to 4A is bonded to each other to produce an adhesive sheet in which an adhesive layer is formed on the base film. The combination of the base film 1A to 4A and the adhesive 1B to 4B is shown in Table 1 of the examples.

(4) Modulation of the composition of the adhesive

50 parts by mass of epoxy resin "1002" (made by Mitsubishi Chemical Corporation, solid bisphenol A type epoxy resin, epoxy equivalent 600), epoxy resin "806" (Mitsubishi Chemical Co., Ltd. product name, Bisphenol F type epoxy resin, epoxy equivalent 160, specific gravity 1.20) 100 parts by mass, hardener "Dyhard 100SF" (trade name of DEGUSSA, cyanogenic acid) 5 parts by mass, cerium oxide filler "SO-C2" (ADMERFINE) (product name, average particle diameter: 0.5 μm), 150 parts by mass, and AEROSIL R972 (manufactured by Japan AEROSIL Co., Ltd., average particle diameter of primary particle diameter: 0.016 μm), and 5 parts by mass. The composition was added with MEK and stirred to form a uniform composition.

Here, 100 parts by mass of phenoxy resin "PKHH" (trade name, manufactured by INCHEM, mass average molecular weight: 52,000, glass transition temperature: 92 °C), and "KBM-802" (Shin-Etsu SILICONE Co., Ltd.) as a coupling agent were added. "Hydroxypropylpropyltrimethoxydecane" 0.4 parts by mass, and "CUREZOLE 2PHZ-PW" as a hardening accelerator (trade name of Shikoku Kasei Co., Ltd., 2-phenyl-4,5-dihydroxyl) The base imidazole and the decomposition temperature of 230 ° C) were 0.5 parts by mass, and the mixture was stirred and mixed until homogeneous. Further, a varnish of the adhesive composition was obtained by filtering it using a 100-mesh filter and vacuum defoaming.

(5) Following the manufacture of the film

Next, the above-mentioned adhesive composition was applied to a release liner composed of a release-treated polyethylene-paraternet film so as to have a thickness of 20 μm after drying, and dried at 130 ° C for 3 minutes. An adhesive film having an adhesive layer formed on the release liner is produced.

(Manufacture of tape for semiconductor processing)

Adhesive sheet is attached so that the annular frame can cover the opening The cut becomes the shape shown in Fig. 3 and the like. Further, the adhesive film is cut into a shape as shown in FIG. 3 or the like so as to cover the back surface of the wafer. Further, the adhesive layer side of the adhesive sheet and the adhesive layer side of the adhesive film are bonded as shown in Fig. 3 and the like so that the adhesive layer 12 is formed so as to form an exposed portion around the film. Tape for semiconductor processing.

<Examples 1 to 5, Comparative Examples 1, 3 to 5>

Bonding a surface protection tape to the surface of the wafer on which the circuit pattern is formed, irradiating the predetermined portion of the wafer with the laser beam, forming a modified region inside the wafer by multiphoton absorption, and grinding the back surface of the wafer In the back grinding step, the adhesive layer of the semiconductor processing tape is bonded to the back surface of the wafer while the wafer is heated to 70 to 80 ° C, and the surface protective tape is peeled off from the surface of the wafer. The tape for semiconductor processing is subjected to ultraviolet irradiation treatment at an output of 200 mJ/cm ² , and an expansion step is performed by expanding the semiconductor processing tape to cause the adhesive layer of the wafer and the semiconductor processing tape to follow The plurality of wafers with the adhesive layer are obtained by dividing the break line, and the portion of the semiconductor processing tape that is not overlapped with the wafer is applied (the ring between the region where the wafer exists and the ring frame) a region of semiconductors heated to 100 ° C to shrink to remove the slack generated during the expansion step and to maintain the spacing of the wafers With tape, and evaluated the physical properties shown below. Further, the wafer size was 5 mm × 5 mm.

<Comparative Example 2>

The physical properties of the tapes for conductor processing were evaluated in the same manner as in the above-described Examples 1 to 5 and Comparative Examples 1 and 3 to 5 except that the ultraviolet irradiation treatment was not carried out.

(Measurement of stress)

The adhesive tape in the step of breaking the adhesive layer by the extension was subjected to a tensile test in accordance with the method specified in JIS7162, and only the stress of the substrate and the stress of the adhesive tape were measured at a tensile elongation of 10%.

In addition, the term "stress of the adhesive tape" refers to the stress of the semiconductor processing tape 10 of the present invention used in the expansion step of the method for manufacturing a semiconductor device.

In addition, the above-mentioned "stress of only the base material" means the stress in the state of only the base film 11 before the adhesive layer 12 is provided on the base film 11.

<Evaluation of pickup>

Implementing the semiconductor wafer from the adhesive layer of the semiconductor processing tape Take the steps and evaluate the pick-up.

Specifically, a pick-up test was performed on any 1000 wafers using a Dice picker apparatus (manufactured by Canon Machinery Co., Ltd., trade name CAP-300II), and the adhesive layer layer was removed from the adhesive layer. If the pick-up is successful, the pick-up success rate is calculated and the pick-up property is evaluated.

Those who have a pick-up success rate of 100% are rated as excellent products "◎", 98% or more are rated as good products "○", and 95% or more and less than 98% are rated as allowable products "△", which will be less than 95%. It is rated as defective product "X".

<Evaluation of slit width uniformity>

The slit width in the longitudinal direction and the width direction of the center portion of the effective wafer (5 mm × 5 mm) was measured on a 12-inch wafer, and the smaller one was 50 μm or more, and it was evaluated as "◎", 30 μm or more and less than 30 μm. When it is 50 μm , it is evaluated as “○”, when it is 15 μm or more and less than 30 μm , it is evaluated as “△”, and when it is less than 15 μm , it is evaluated as “×”.

The results of these stresses, slit width evaluation, and pick evaluation are shown in Table 2.

<evaluation result>

As shown in Table 2, it is clear that the stress of the adhesive tape is satisfied / only the substrate In Examples 1 to 5 in which the stress = 1 or less, the slit width was sufficiently and uniformly expanded and showed good pick-up property not found in the prior art.

On the other hand, in Comparative Examples 1 to 4 which did not satisfy the above conditions, the slit width was narrow, or uneven, and the pickup property was poorly evaluated.

10‧‧‧Semiconductor processing tape

11‧‧‧Substrate film

12‧‧‧Adhesive layer

13‧‧‧ adhesive layer

15‧‧‧Auxiliary tape

Claims (7)

An adhesive tape for semiconductor processing, comprising: an adhesive tape comprising a base film and an adhesive layer formed on at least one side of the base film; and the step of breaking the adhesive by expansion Under the tensile test of the above adhesive tape in accordance with the method specified in JIS7162, only the relationship between the stress of the substrate and the stress of the adhesive tape when the tensile elongation is 10% is: stress of the adhesive tape / stress of only the substrate = 1 the following. The tape for semiconductor processing according to claim 1, wherein the tape for semiconductor processing is used in a method of manufacturing a semiconductor device comprising the steps of: (a) attaching a surface protective tape to a surface of a wafer on which a circuit pattern is formed; (b) a step of grinding the back surface of the wafer back surface; (c) a step of bonding the adhesive layer of the semiconductor processing tape to the back surface of the wafer while the wafer is heated; a step of peeling the surface protective tape from the surface of the wafer; (e) irradiating the predetermined portion of the wafer with laser light, and using multiphoton absorption to form a modified region inside the wafer; (f) borrowing Expanding the semiconductor processing tape to form an extension step of the wafer and the adhesive layer of the semiconductor processing tape along a breaking line to obtain a plurality of wafers with the adhesive layer; (g) The aforementioned semiconductor processing tape after expansion, by The overlapping portion of the wafer is heat-shrinked to remove the slack generated in the expanding step and to maintain the interval between the wafers; (h) picking up the wafer with the adhesive layer from the adhesive layer of the semiconductor processing tape The steps. The tape for semiconductor processing according to claim 1, wherein the tape for semiconductor processing is used in a method of manufacturing a semiconductor device comprising the steps of: (a) attaching a surface protective tape to a surface of a wafer on which a circuit pattern is formed; (b) a step of grinding the back surface of the wafer back surface; (c) a step of bonding the adhesive layer of the semiconductor processing tape to the back surface of the wafer while the wafer is heated; a step of peeling the surface protective tape from the surface of the wafer; (e) irradiating the laser light along the break line of the surface of the wafer to break the wafer into a wafer; (f) expanding the semiconductor by expanding a processing tape, wherein the adhesive layer is separated from each of the wafers to obtain a plurality of wafers having the adhesive layer; and (g) the expanded semiconductor tape is formed by The overlapping portion of the wafer is heat-shrinked to remove the slack generated in the expanding step and to maintain the interval between the wafers; (h) picking up from the adhesive layer of the semiconductor processing tape The step of the aforementioned wafer of the agent layer. The semiconductor processing tape of claim 1, the semiconductor processing tape It is used in a manufacturing method of a semiconductor device including the steps of: (a) a step of bonding a surface protective tape to a surface of a wafer on which a circuit pattern is formed; and (b) a step of grinding a back surface of the wafer back surface; (c) a step of bonding the adhesive layer of the semiconductor processing tape to the back surface of the wafer in a state where the wafer is heated; (d) a step of peeling the surface protective tape from the surface of the wafer; (e) a step of cutting the wafer into a wafer along a break line using a dicing blade; (f) by expanding the aforementioned semiconductor processing tape, the adhesive layer is separated by each of the aforementioned wafers a step of expanding a plurality of wafers with the adhesive layer; (g) removing the slack generated in the expanding step by heat-shrinking a portion of the semiconductor processing tape that has not been overlapped with the wafer after expansion And maintaining the interval between the wafers; (h) the step of picking up the wafer with the adhesive layer from the adhesive layer of the semiconductor processing tape. The tape for semiconductor processing according to claim 1, wherein the tape for semiconductor processing is used in a method of manufacturing a semiconductor device comprising the steps of: (a) bonding a dicing tape to a back surface of a wafer on which a circuit pattern is formed, and using a step of cutting the cutting blade along a predetermined line to a depth smaller than the thickness of the wafer; (b) a step of bonding the surface protective tape to the surface of the wafer; (c) a back grinding step of peeling off the dicing tape and grinding the back surface of the wafer to be divided into wafers; (d) an adhesive layer of the semiconductor processing tape in a state where the wafer is heated a step of bonding to the back surface of the wafer to be separated into the wafer; (e) a step of peeling the surface protective tape from the surface of the wafer to be separated into the wafer; (f) expanding the semiconductor processing a tape, wherein the adhesive layer is separated from each of the wafers to obtain a plurality of wafers with the adhesive layer; (g) the expanded semiconductor processing tape, by not using the wafer The overlapping portions are heat-shrinked to remove the slack generated in the aforementioned expanding step and to maintain the interval between the wafers; (h) the step of picking up the aforementioned wafer with the adhesive layer from the adhesive layer of the aforementioned semiconductor processing tape. The tape for semiconductor processing according to claim 1, wherein the tape for semiconductor processing is used in a method of manufacturing a semiconductor device comprising the steps of: (a) attaching a surface protective tape to a surface of a wafer on which a circuit pattern is formed; (b) irradiating the predetermined portion of the wafer with the laser beam, and forming a modified region inside the wafer by multiphoton absorption; (c) grinding the back surface grinding step of the wafer back surface; (d) a step of bonding the adhesive layer of the semiconductor processing tape to the back surface of the wafer while the wafer is heated; (e) a step of peeling the surface protective tape from the surface of the wafer; (f) expanding the adhesive layer of the semiconductor processing tape to form the adhesive layer of the semiconductor processing tape along the break line by expanding the semiconductor processing tape And expanding the plurality of wafers with the adhesive layer; (g) removing the portion of the semiconductor processing tape that has not been overlapped with the wafer by heat shrinkage, and removing the expansion step a step of generating slack and maintaining the interval between the wafers; (h) a step of picking up the wafer with the adhesive layer from the adhesive layer of the aforementioned semiconductor processing tape. A semiconductor device using the tape for semiconductor processing according to any one of claims 1 to 6.