CN114364761B - Adhesive tape for semiconductor processing - Google Patents

Adhesive tape for semiconductor processing Download PDF

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Publication number
CN114364761B
CN114364761B CN202080021280.8A CN202080021280A CN114364761B CN 114364761 B CN114364761 B CN 114364761B CN 202080021280 A CN202080021280 A CN 202080021280A CN 114364761 B CN114364761 B CN 114364761B
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China
Prior art keywords
adhesive layer
adhesive
acrylate
radiation
meth
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CN202080021280.8A
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CN114364761A (en
Inventor
土屋贵德
石黑邦彦
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Furukawa Electric Co Ltd
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Furukawa Electric Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/10—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet
    • C09J2301/12—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers
    • C09J2301/124—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers the adhesive layer being present on both sides of the carrier, e.g. double-sided adhesive tape
    • C09J2301/1242—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers the adhesive layer being present on both sides of the carrier, e.g. double-sided adhesive tape the opposite adhesive layers being different
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/20—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself
    • C09J2301/208—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself the adhesive layer being constituted by at least two or more adjacent or superposed adhesive layers, e.g. multilayer adhesive
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/20—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself
    • C09J2301/21—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself the adhesive layer being formed by alternating adhesive areas of different nature
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
    • C09J2301/416—Additional features of adhesives in the form of films or foils characterized by the presence of essential components use of irradiation
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/50—Additional features of adhesives in the form of films or foils characterized by process specific features
    • C09J2301/502—Additional features of adhesives in the form of films or foils characterized by process specific features process for debonding adherents

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Adhesive Tapes (AREA)
  • Dicing (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

Provided is a tape for semiconductor processing which can easily peel a chip with an adhesive layer from an adhesive layer at the time of pickup, can reliably adhere and fix a ring frame, and does not cause the adhesive layer to float at the time of bonding a semiconductor wafer. The adhesive tape (1) for semiconductor processing is characterized in that a base film (41), a first adhesive layer (42) and a second adhesive layer (43) are provided in this order, an adhesive layer (3) is provided on the surface of the second adhesive layer (43) on the opposite side of the base film (41) and the first adhesive layer (42), the adhesive force of the first adhesive layer (42) is greater than the adhesive force of the second adhesive layer (43), each of the first adhesive layer (42), the second adhesive layer (43) and the adhesive layer (3) has a planar shape, the planar shape of the adhesive layer (3) is greater than the planar shape of the second adhesive layer (43), the planar shape of the first adhesive layer (42) is greater than the planar shape of the adhesive layer (3), and the first adhesive layer (42) is in contact with the adhesive layer (3) at the peripheral part of the second adhesive layer (43).

Description

Adhesive tape for semiconductor processing
Technical Field
The present invention relates to an adhesive tape having an adhesive layer on a base film, and a semiconductor processing tape having an adhesive layer bonded to a semiconductor wafer on the adhesive layer.
Background
Conventionally, in a process for manufacturing a semiconductor device, an adhesive tape for bonding and holding a semiconductor wafer is used in a dicing process for dicing individual semiconductor wafers. In order to simplify the process, a semiconductor processing tape in which an adhesive layer for fixing a chip required for the mounting process is integrated has been proposed (for example, see patent document 1).
After dicing the semiconductor wafer, the singulated chips are lifted up by the lift-up pins in the pick-up step, and then picked up by peeling the adhesive layer from the adhesive layer, and then directly bonded to the lead frame, the package substrate, and the like in the mounting step.
In recent years, along with the popularization of IC cards, thinning of semiconductor chips has been desired. Therefore, there is a need to thin a semiconductor chip having a conventional thickness of about 350 μm to a thickness of 50 to 100 μm or less. In addition, the chip size has been increased by the pursuit of high integration.
Thin semiconductor chips are broken when the push-up height of the push-up pins is increased at the time of picking up, so that the push-up height needs to be reduced. As a result, in order to peel the semiconductor chip with the adhesive layer from the adhesive layer, the adhesive force of the adhesive layer needs to be lowered. Further, since the contact area between the semiconductor chip having a large size and the adhesive layer is large, the adhesive force of the adhesive layer still needs to be low in order to peel the semiconductor chip having the adhesive layer from the adhesive layer.
However, a ring frame for holding the semiconductor wafer in the dicing device or the pick-up device is also attached to the adhesive layer. As described above, when the adhesive force of the adhesive layer is lowered, there is a possibility that the ring frame peels off from the adhesive layer. In particular, when the semiconductor wafer and the ring frame are stored while being bonded to the semiconductor processing tape for a certain period of time, the possibility of the ring frame peeling from the adhesive layer increases.
In order to solve the above-described problems, a dicing die bonding film has been disclosed in which an ultraviolet-curable adhesive layer is cured in advance in accordance with the size of the adhesive layer to reduce the adhesive force, whereby the die with the adhesive layer can be easily peeled off from the adhesive layer at the time of picking up, and the fixing ring frame can be reliably bonded to a portion of the adhesive layer where the adhesive force is large without irradiation of ultraviolet rays (for example, refer to patent document 2).
Further, a dicing tape-integrated film for back surface of semiconductor is disclosed, which comprises a dicing tape in which a base layer, a 1 st adhesive layer and a 2 nd adhesive layer are laminated in this order, and a film for back surface of semiconductor laminated on the 2 nd adhesive layer of the dicing tape, wherein the peel strength Y between the 1 st adhesive layer and the 2 nd adhesive layer is set to 0.2 to 10N/20mm, and the peel strength X between the 2 nd adhesive layer and the film for back surface of semiconductor is set to 0.01 to 0.2N/20mm (for example, refer to patent document 3).
In the dicing tape-integrated film for semiconductor back surface, the peel strength X is set to 0.01 to 0.2N/20mm, so that the holding force at dicing can be sufficiently ensured, the film for semiconductor back surface at dicing can be prevented from turning up, contamination of the semiconductor chip can be effectively prevented, and the ease of peeling at pick-up can be improved.
In the dicing tape-integrated film for semiconductor back surface, since the peel strength Y is set to 0.2 to 10N/20mm, the adhesion to the ring frame at dicing can be improved, the holding force of the semiconductor wafer can be sufficiently ensured, and the transfer of the adhesive agent of the 2 nd adhesive layer to the film for semiconductor back surface (paste residue) due to the peeling between the 1 st adhesive layer and the 2 nd adhesive layer can be prevented.
Prior art literature
Patent literature
Patent document 1: japanese patent laid-open No. 2008-218571
Patent document 2: japanese patent No. 4717085
Patent document 3: japanese patent application laid-open No. 2012-33637
Disclosure of Invention
However, in the dicing die-bonding film of patent document 2, it is difficult to accurately irradiate ultraviolet rays only in a desired range of the adhesive layer, and therefore, in order to achieve such dicing die-bonding film, there is a problem that a process is complicated by applying masking or the like to a portion other than the desired range.
In the dicing tape-integrated film for back surface of semiconductor of patent document 3, the 2 nd adhesive layer is formed in a portion larger than a portion corresponding to the bonded portion of the film for back surface of semiconductor and smaller than the entire surface of the 1 st adhesive layer, or the 2 nd adhesive layer is formed only in a portion corresponding to the bonded portion of the film for back surface of semiconductor. Therefore, in the step of bonding the dicing tape-integrated semiconductor back surface film to the semiconductor wafer, when the release film covering the adhesive layer side surface of the dicing tape-integrated semiconductor back surface film is peeled off or when tension is applied to the dicing tape-integrated semiconductor back surface film via the bonding device, there is a problem that the adhesive layer floats up due to local peeling between the 2 nd adhesive layer having a low peeling force and the semiconductor back surface film, and bonding is performed in a state where wrinkles occur in the adhesive layer when bonding to the semiconductor wafer.
Accordingly, an object of the present invention is to provide a semiconductor processing tape which can easily peel a chip with an adhesive layer from an adhesive layer at the time of picking up, and which can reliably adhere a fixing ring frame without causing the adhesive layer to float at the time of bonding a semiconductor wafer.
Means for solving the problems
In order to solve the above problems, the adhesive tape for semiconductor processing according to the present invention is characterized in that a base film, a first adhesive layer, and a second adhesive layer are provided in this order, an adhesive layer is provided on a surface of the second adhesive layer opposite to the base film and the first adhesive layer, an adhesive force of the first adhesive layer is larger than an adhesive force of the second adhesive layer, each of the first adhesive layer, the second adhesive layer, and the adhesive layer has a planar shape, the planar shape of the adhesive layer is larger than the planar shape of the second adhesive layer, the planar shape of the first adhesive layer is larger than the planar shape of the adhesive layer, and the first adhesive layer is in contact with the adhesive layer at a peripheral portion of the second adhesive layer.
In the above adhesive tape for semiconductor processing, the adhesive force between the second adhesive layer and the SUS304 surface is preferably 0.1 to 0.6N/25mm at a peeling angle of 180 degrees and a peeling speed of 300mm/min under the conditions of 23℃and 50% RH.
In the above adhesive tape for semiconductor processing, the adhesive force between the first adhesive layer and the SUS304 surface is preferably 1 to 10N/25mm at a peeling angle of 180 degrees and a peeling speed of 300mm/min under the conditions of 23℃and 50% RH.
In the above adhesive tape for semiconductor processing, the first adhesive layer is preferably a radiation-non-curable layer which is not cured by irradiation with radiation.
In the above-described adhesive tape for semiconductor processing, the second adhesive layer is preferably a radiation-non-curable layer which is not cured by irradiation with radiation.
In the above-described adhesive tape for semiconductor processing, the second adhesive layer preferably has a planar shape larger than that of the semiconductor wafer bonded to the adhesive layer.
Effects of the invention
According to the present invention, it is possible to provide a semiconductor processing tape capable of easily peeling a chip with an adhesive layer from an adhesive layer at the time of picking up, and reliably adhering a fixing ring frame without causing the adhesive layer to float at the time of bonding a semiconductor wafer.
Drawings
Fig. 1 is a cross-sectional view schematically showing the structure of a semiconductor processing tape according to an embodiment of the present invention.
Fig. 2 (a) is a plan view schematically showing the structure of the tape for semiconductor processing according to the embodiment of the present invention, and fig. 2 (b) is a cross-sectional view thereof.
Fig. 3 is an explanatory diagram schematically showing a semiconductor wafer bonding step in a method for manufacturing a semiconductor device using the semiconductor processing tape according to the embodiment of the present invention.
Fig. 4 is an explanatory view schematically showing a state in which a semiconductor wafer is bonded to a semiconductor processing tape in a method for manufacturing a semiconductor device using the semiconductor processing tape according to the embodiment of the present invention.
Fig. 5 is an explanatory diagram schematically showing a dicing step of a method for manufacturing a semiconductor device using the tape for semiconductor processing according to the embodiment of the present invention.
Fig. 6 is an explanatory diagram schematically showing an expanding step of a method for manufacturing a semiconductor device using the semiconductor processing tape according to the embodiment of the present invention.
Fig. 7 is an explanatory view schematically showing a pick-up process of a method for manufacturing a semiconductor device using the tape for semiconductor processing according to the embodiment of the present invention.
Detailed Description
Hereinafter, embodiments of the present invention will be described in detail.
As shown in fig. 1, the adhesive tape 1 for semiconductor processing according to the embodiment of the present invention includes an adhesive tape 4 including a base film 41, a first adhesive layer 42 provided on the base film 41, and a second adhesive layer 43 provided on the first adhesive layer 42, and the adhesive layer 3 is provided on the second adhesive layer 43.
As shown in fig. 1 and 2, the adhesive tape 1 for semiconductor processing of the present invention has a base film 41 and a first adhesive layer 42 cut (precut) into a planar shape corresponding to a ring frame R (see fig. 3 to 7). The base film 41 having such a planar shape and the first adhesive layer 42 are also referred to as a first label portion 4a1. The adhesive layer 3 is cut (precut) to a planar shape corresponding to the semiconductor wafer, and the second adhesive layer 43 is cut (precut) to a planar shape smaller in size than the adhesive layer 3. The second adhesive layer 43 having this planar shape is also referred to as a second label portion 4a2.
The adhesive tape 1 for semiconductor processing of the present invention is preferably a form in which the long base tape 2 having a laminate formed by laminating the plurality of adhesive layers 3, the second label portion 4a2, and the first label portion 4a1 each having the above-described planar shape is wound in a roll shape, but in the present embodiment, the laminate provided on the base tape 2 may be cut one by one.
The semiconductor processing tape 1 includes a base tape 2, and the base tape 2 is provided with: an adhesive layer 3 having a predetermined planar shape, and an adhesive tape 4 having a second label portion 4a2, a first label portion 4a1, and a peripheral portion 4b surrounding the outside of the first label portion 4a 1. The peripheral portion 4b is formed of the base film 41 and the first adhesive layer 42. Support members 15 are provided along the longitudinal direction at both ends in the short side direction of the surface of the base tape 2 opposite to the surface on which the adhesive layer 3 is provided.
The first label portion 4a1 has a shape corresponding to the ring frame R for cutting. The ring frame R is ring-shaped. The shape corresponding to the shape of the ring frame R is preferably substantially the same shape as the inner side of the ring frame R and is a similar shape larger than the inner side of the ring frame R. The shape may be other than a circular shape, but is preferably a shape close to a circular shape, and more preferably a circular shape. The peripheral portion 4b includes a form completely surrounding the outside of the first tag portion 4a1 and a form incompletely surrounding as shown in the figure. The peripheral portion 4b may not be provided, but if provided, the winding tension applied to the label portion 4a can be dispersed in a state of being wound into a roll shape.
The adhesive layer 3 has a predetermined planar shape that is smaller than the label portion 4a so as to be able to attach the ring frame R to the peripheral edge portion of the first label portion 4a1 of the adhesive tape 4 and push up with the push-up member of the pickup device. The adhesive layer 3 is preferably substantially the same shape as the first label portion 4a1 and has a similar shape smaller than the size of the first label portion 4a 1. The adhesive layer 3 may not be circular, but is preferably approximately circular in shape, and more preferably circular.
The second label portion 4a2 has a shape smaller than the planar shape of the adhesive layer 3. The second label portion 4a2 is preferably substantially the same shape as the adhesive layer 3 and is of a similar shape smaller than the size of the adhesive layer 3. The second tag portion 4a2 may not be circular, but is preferably approximately circular, and more preferably circular. Further, the shape is preferably larger than the semiconductor wafer W (see fig. 3) bonded to the adhesive layer 3.
The second label portion 4a2 is preferably larger than the semiconductor wafer W bonded to the adhesive layer 3. When the second label portion 4a2 is smaller than the semiconductor wafer W, the semiconductor chip C may not be picked up at a portion corresponding to a portion where the second label portion 4a2 is not present in the peripheral edge portion of the semiconductor wafer W.
The adhesive layer 3 has a planar shape larger than that of the second adhesive layer 43 (second label portion 4a 2), and the first adhesive layer (first label portion 4a 1) has a planar shape larger than that of the adhesive layer 3, so that the first adhesive layer 42 is brought into contact with and bonded to the adhesive layer 3 at the peripheral portion of the second adhesive layer 43.
Each component is described in detail below.
(substrate film 41)
The base film 41 is not particularly limited, and a known resin such as plastic can be used. In general, as the base film 41, a thermoplastic plastic film can be used. The base film 41 to be used is preferably a polymer material such as polyolefin, such as polyethylene, polypropylene, ethylene-propylene copolymer, and polybutene, engineering plastic, such as styrene-hydrogenated isoprene-styrene block copolymer, styrene-isoprene-styrene copolymer, styrene-hydrogenated butadiene-styrene copolymer, and styrene-hydrogenated isoprene/butadiene-styrene copolymer, thermoplastic elastomer, such as ethylene-vinyl acetate copolymer, ethylene- (meth) acrylic acid ester copolymer, and ethylene-metal salt ionomer, such as polyethylene terephthalate, polybutylene terephthalate, polycarbonate, polymethyl methacrylate, and soft polyvinyl chloride, semi-rigid polyvinyl chloride, polyester, polyurethane, polyamide, polyimide, natural rubber, and synthetic rubber. The adhesive layer may be formed by mixing 2 or more kinds selected from these groups, or may be formed by forming a plurality of layers, and may be arbitrarily selected in accordance with the adhesiveness to the adhesive layer.
The base film 41 may be a commercially available film or a film formed by a general method. The thickness of the base film 41 is not particularly different from that of the base film 41 of a general adhesive tape for dicing. Typically 30 to 200. Mu.m, more preferably 50 to 150. Mu.m.
The surface of the base film 41 in contact with the first adhesive layer 42 may be subjected to corona treatment, primer treatment, or the like in order to improve adhesion.
(first adhesive layer 42)
The first adhesive layer 42 is preferably a radiation-non-curable layer that does not cure by irradiation with radiation.
As the resin for the radiation-non-curable first adhesive layer 42 that is not cured by irradiation with radiation, a copolymer containing a constituent unit derived from an alkyl (meth) acrylate monomer and a constituent unit derived from 2-hydroxypropyl acrylate, 2-hydroxyethyl (meth) acrylate and/or 2-hydroxybutyl acrylate, and containing a constituent unit derived from the alkyl (meth) acrylate monomer, can be used, and the copolymer is crosslinked with an isocyanate compound.
The first pressure-sensitive adhesive layer 42 preferably has an adhesive strength to the SUS304 surface of 1 to 10N/25mm, more preferably 5 to 8N/25mm, at a peeling angle of 180 degrees and a peeling speed of 300mm/min under conditions of 23℃and 50% RH.
When the adhesive force of the first adhesive layer 42 to the SUS304 surface is less than 1N/25mm, there is a possibility that peeling may occur between the first adhesive layer 42 and the adhesive layer 3. When the adhesive force of the first adhesive layer 42 to the SUS304 surface exceeds 10N/25mm, there is a possibility that the adhesive paste to the ring frame R remains.
In the present invention, the adhesive force of the first adhesive layer 42 is an adhesive force in a state where the first adhesive layer 42 is provided on the base film 41.
In order to achieve adhesion to the SUS304 surface within the above range, it is preferable to use a polypropylene oxide having a number average molecular weight of 3000 to 10000, which comprises an acrylic copolymer comprising 70 to 90% by weight of an alkyl (meth) acrylate monomer having 4 or more carbon atoms and 10 to 30% by weight of 2-hydroxypropyl acrylate and having a hydroxyl value of 45 to 100, and crosslinked with an isocyanate-based crosslinking agent.
Examples of the alkyl (meth) acrylate monomer having an alkyl group with a carbon number of 4 or more include butyl (meth) acrylate, hexyl (meth) acrylate, octyl (meth) acrylate, 2-methylpropyl (meth) acrylate, 2-methylbutyl (meth) acrylate, 2-ethylbutyl (meth) acrylate, 2-methylhexyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, 1, 2-dimethylbutyl (meth) acrylate, and lauryl (meth) acrylate, and particularly preferably have an alkyl group with a carbon number of 8 or more.
In the copolymer forming the binder, the constituent unit derived from the alkyl (meth) acrylate monomer having an alkyl group with a carbon number of 4 or more preferably contains 70 to 90 mass%. When the number of constituent units derived from the alkyl (meth) acrylate monomer is too large, the crosslinking point of the adhesive becomes small, and sufficient characteristics cannot be obtained, and when the number of constituent units derived from the alkyl (meth) acrylate monomer is too small, the usable time required for mixing the adhesive composition and applying the same to the base film 41 becomes short, and thus, the adhesive tape 1 for semiconductor processing of the present invention is not satisfactory.
It is also preferable to use 2-hydroxypropyl acrylate as the monomer having a crosslinkable functional group, and to contain 10 to 30% by mass of the monomer as the constituent unit. When a functional group-containing monomer such as 2-hydroxyethyl acrylate having a shorter chain length than 2-hydroxypropyl acrylate is used, the crosslinking reaction is fast and the usable time becomes short, which causes problems in that the progress of the crosslinking reaction becomes slow and the completion of the crosslinking reaction becomes extremely long when a long chain-length monomer such as 2-hydroxybutyl acrylate is used in the production of the adhesive tape 1 for semiconductor processing of the present invention. If the functional group-containing monomer is less than 10% by mass, the polarity is low, the adhesion to the adherend is lowered, and if it exceeds 30% by mass, the adhesion to the adherend is excessive, and there is a possibility that the adhesive residue generated in the adhesion of the ring frame R remains.
The hydroxyl value of the acrylic copolymer in which the constituent unit derived from the alkyl (meth) acrylate monomer having an alkyl group with 4 or more carbon atoms is 70 to 90 mass% and the functional group-containing monomer is 2-hydroxyethyl acrylate and/or 2-hydroxypropyl acrylate is preferably 45 to 100mgKOH/g. When the hydroxyl value is less than 45mgKOH/g, the polarity is low, and the adhesion to the adherend is lowered, and there is a possibility that peeling of the ring frame 9 occurs, and when it exceeds 100mgKOH/g, the adhesion to the adherend is conversely excessive, and there is a possibility that the sticking to the ring frame R remains.
The polypropylene oxide having a number average molecular weight of 3000 to 10000 is not particularly limited as long as it has a number average molecular weight of 3000 to 10000, and may be appropriately selected from known polypropylene oxides. When the number average molecular weight is less than 3000, the low molecular weight component is transferred to the surface of the adherend to increase the contamination, and when it exceeds 10000, the compatibility with the acrylic copolymer is deteriorated, and when the incompatible component is transferred to the surface of the adherend to increase the contamination, so that the number average molecular weight is preferably in the range of 3000 to 10000.
The blending amount of polypropylene oxide is not particularly limited, and may be appropriately adjusted within a range for obtaining a target adhesive force, and may be appropriately selected from a range of 0.5 to 5 parts by mass with respect to 100 parts by mass of the acrylic copolymer. When the amount of polypropylene oxide is less than 0.5 parts, there is a possibility that the ring frame 9 may be peeled off, and when it exceeds 5 parts, there is a possibility that a paste residue may be generated on the ring frame R.
The adhesion to the SUS304 surface can be adjusted by appropriately combining the carbon number of the alkyl group, the blending ratio of the alkyl (meth) acrylate monomer and 2-hydroxypropyl acrylate, the hydroxyl value, the number average molecular weight of polypropylene oxide, the blending ratio of polypropylene oxide, and the like.
The copolymer constituting the adhesive is crosslinked by an isocyanate compound. The isocyanate compound is not particularly limited, and examples thereof include aromatic isocyanates such as 4,4' -diphenylmethane diisocyanate, toluene diisocyanate, xylylene diisocyanate, 4' -diphenyl ether diisocyanate, 4' - [2, 2-bis (4-phenoxyphenyl) propane ] diisocyanate, hexamethylene diisocyanate, 2, 4-trimethyl-hexamethylene diisocyanate, isophorone diisocyanate, 4' -dicyclohexylmethane diisocyanate, 2,4' -dicyclohexylmethane diisocyanate, lysine diisocyanate, and lysine triisocyanate. Specifically, CORONATE L (trade name, manufactured by japan Polyurethane company) and the like can be used as commercial products.
The content of the isocyanate compound in the first adhesive layer 42 is preferably 2 to 12 parts by mass relative to 100 parts by mass of the copolymer. This is because when the isocyanate compound is less than 2 parts by mass, crosslinking is insufficient, cohesiveness is low, and the adhesive residue to the ring frame R is increased. When the isocyanate compound exceeds 12 parts by mass, the usable time required for the adhesive composition to be mixed and applied to the base film 41 becomes short, and the production of the adhesive tape 1 for semiconductor processing of the present invention becomes a problem.
The pressure-sensitive adhesive composition used for forming the first pressure-sensitive adhesive layer 42 may contain, for example, known additives such as tackifiers, age resistors, fillers, colorants, flame retardants, antistatic agents, softeners, antioxidants, plasticizers, and surfactants, as necessary.
The first adhesive layer 42 may have a single layer or a laminated layer. When the first pressure-sensitive adhesive layer 42 is a plurality of layers, the pressure-sensitive adhesive layer 3 preferably has a pressure-sensitive adhesive strength to the SUS304 surface of 1 to 10N/25mm at a peel angle of 180 degrees and a peel speed of 300mm/min under the conditions of 23℃and 50% RH.
The thickness of the first adhesive layer 42 is preferably 1 to 20 μm, more preferably 1 to 5 μm. When the first pressure-sensitive adhesive layer 42 is smaller than 1 μm, the pressure-sensitive adhesive layer 3 is weakly bonded to the pressure-sensitive adhesive layer 3, and when the pressure-sensitive adhesive layer 3 is locally peeled off between the pressure-sensitive adhesive layer 3 and the second pressure-sensitive adhesive layer 43 when the pressure-sensitive adhesive layer 3 is applied to the semiconductor processing tape via the bonding device in the step of peeling off the base tape 2 covering the pressure-sensitive adhesive layer 3 in the dicing tape-integrated film for semiconductor back surface bonding of the semiconductor wafer W, there is a possibility that the pressure-sensitive adhesive layer 3 may float up and bonding may be performed in a state where wrinkles are generated in the pressure-sensitive adhesive layer 3 when bonding to the semiconductor wafer W. If the first pressure-sensitive adhesive layer 42 is thicker than 15 μm, the adhesion becomes excessive, and there is a possibility that the adhesive residue to the ring frame R may occur.
Although the above description has been made of the radiation-non-curable adhesive that is not cured by irradiation with radiation, the first adhesive layer 42 may be a radiation-curable adhesive that is cured by irradiation with radiation.
The composition of the radiation curable adhesive composition is not particularly limited, but as an embodiment, there is exemplified a composition having a polymer (a) as a base resin in the adhesive composition, the polymer (a) containing 60 mol% or more of a (meth) acrylic acid ester having an alkyl chain with a carbon number of 6 to 12 and having an energy ray curable carbon-carbon double bond with an iodine value of 5 to 30. Here, the energy ray refers to an ionizing radiation such as ultraviolet ray or electron ray.
In such a polymer (a), the effect of reducing the adhesive force after irradiation with energy rays is excellent in that the amount of energy ray-curable carbon-carbon double bonds introduced is 5 or more in terms of iodine number. More preferably 10 or more. Further, when the iodine value is 30 or less, the holding power of the chip after the irradiation with the energy ray until the pickup is high, and the gap between the chips is easily expanded at the time of expansion immediately before the pickup step, which is excellent. When the gap between the chips can be sufficiently widened before the pickup step, the image of each chip at the time of pickup is easy to recognize and easy to pick up, which is preferable. In addition, when the amount of carbon-carbon double bonds introduced is 5 to 30 in terms of iodine number, the polymer (A) itself is stable and can be easily produced, and is therefore preferable.
When the glass transition temperature of the polymer (A) is-70℃or higher, the polymer (A) is excellent in heat resistance against heat generated by irradiation with energy rays, and more preferably-66℃or higher. In addition, 15 ℃ or lower provides excellent chip scattering preventing effect after dicing of a wafer having a rough surface, and more preferably 0 ℃ or lower, and even more preferably-28 ℃ or lower.
The polymer (a) may be produced in any form, but for example, a compound obtained by mixing an acrylic copolymer with an energy ray-curable carbon-carbon double bond; and (b) reacting the functional group-containing acrylic copolymer or the functional group-containing methacrylic copolymer (A1) with the functional group-containing compound (A2) having an energy ray-curable carbon-carbon double bond.
Among them, the acrylic copolymer having a functional group or the methacrylic copolymer having a functional group (A1) may be obtained by copolymerizing a monomer (A1-1) having a carbon-carbon double bond such as an alkyl acrylate or an alkyl methacrylate and a monomer (A1-2) having a carbon-carbon double bond and having a functional group. Examples of the monomer (A1-1) include hexyl acrylate, n-octyl acrylate, isooctyl acrylate, 2-ethylhexyl acrylate, dodecyl acrylate, decyl acrylate, lauryl acrylate, and pentyl acrylate, n-butyl acrylate, isobutyl acrylate, ethyl acrylate, and methyl acrylate having an alkyl chain of 5 or less, and similar methacrylates.
As the monomer (A1-1), a monomer having a larger carbon number of the alkyl chain is used, the glass transition temperature is lower, and thus, by appropriately selecting, an adhesive composition having a desired glass transition temperature can be prepared. In addition to the glass transition temperature, a low molecular compound having a carbon-carbon double bond such as vinyl acetate, styrene, acrylonitrile, or the like may be blended for the purpose of improving various performances such as compatibility. In this case, these low-molecular compounds are blended in a range of 5 mass% or less based on the total mass of the monomer (A1-1).
On the other hand, examples of the functional group included in the monomer (A1-2) include carboxyl groups, hydroxyl groups, amino groups, cyclic acid anhydride groups, epoxy groups, isocyanate groups, and the like, and specific examples of the monomer (A1-2) include acrylic acid, methacrylic acid, cinnamic acid, itaconic acid, fumaric acid, phthalic acid (phthalic acid), 2-hydroxyalkyl acrylates, 2-hydroxyalkyl methacrylates, glycol monoacrylates, glycol monomethacrylates, N-methylolacrylamide, N-methylolmethacrylamide, allyl alcohol, N-alkylamino ethyl acrylate, N-alkylamino ethyl methacrylate, acrylamides, methacrylamides, maleic anhydride, itaconic anhydride, fumaric anhydride, phthalic anhydride (phthalic anhydride), glycidyl acrylate, glycidyl methacrylate, allyl glycidyl ether, and the like.
In the compound (A2), when the functional group of the functional group-containing acrylic copolymer or the functional group-containing methacrylic copolymer (A1) is a carboxyl group or a cyclic acid anhydride group, hydroxyl groups, epoxy groups, isocyanate groups, etc., hydroxyl groups, cyclic acid anhydride groups, isocyanate groups, etc., amino groups, epoxy groups, isocyanate groups, etc., epoxy groups, carboxyl groups, cyclic acid anhydride groups, amino groups, etc., are used, and specific examples thereof include the same groups as those exemplified in the specific examples of the monomer (A1-2). As the compound (A2), a compound in which a part of the isocyanate groups of the polyisocyanate compound is urethanized with a monomer having a hydroxyl group or a carboxyl group and an energy ray-curable carbon-carbon double bond may be used.
In the reaction between the functional group-containing acrylic copolymer (A1) or the functional group-containing methacrylic copolymer (A2), the unreacted functional group remains, and thus, the desired properties such as acid value and hydroxyl value can be produced. When OH groups remain so that the hydroxyl value of the polymer (A) becomes 5 to 100, the adhesive force after irradiation with energy rays is reduced, whereby the adhesive residue to the ring frame R can be further reduced. When the hydroxyl value of the polymer (a) is 5 or more, the effect of reducing the adhesive force after irradiation with energy rays is excellent, and when it is 100 or less, the fluidity of the adhesive after irradiation with energy rays is excellent. When the acid value is 30 or less, the fluidity of the adhesive is excellent.
In the synthesis of the polymer (a), ketone, ester, alcohol, and aromatic solvents can be used as the organic solvent in the case of performing the reaction in solution polymerization, but among them, toluene, ethyl acetate, isopropyl alcohol, benzyl cellosolve, ethyl cellosolve, acetone, methyl ethyl ketone, and other solvents which are generally good solvents for acrylic polymers and have a boiling point of 60 to 120 ℃ are preferable, and as the polymerization initiator, azo-based, such as α, α' -azobisisobutyronitrile, and other radical generators, organic peroxide-based, such as benzoyl peroxide, and the like are generally used. In this case, a catalyst and a polymerization inhibitor may be used in combination as needed, and the polymerization temperature and the polymerization time may be adjusted to obtain the polymer (A) having a desired molecular weight. In addition, as for the adjustment of the molecular weight, a thiol or carbon tetrachloride-based solvent is preferably used. The reaction is not limited to solution polymerization, and may be performed by other methods such as bulk polymerization and suspension polymerization.
In the adhesive tape 1 for semiconductor processing of the present invention, the resin composition constituting the first adhesive layer 42 may contain a compound (B) functioning as a crosslinking agent in addition to the polymer (a). For example, polyisocyanates, melamine/formaldehyde resins, and epoxy resins may be used alone or in combination of 2 or more. The compound (B) reacts with the polymer (a) or the base film 41, and as a result, the cohesive force of the adhesive containing the polymers (a) and (B) as main components can be improved after the adhesive composition is applied, through the crosslinked structure.
The polyisocyanates include, but are not particularly limited to, for example, aromatic isocyanates such as 4,4' -diphenylmethane diisocyanate, toluene diisocyanate, xylylene diisocyanate, 4' -diphenyl ether diisocyanate, 4' - [2, 2-bis (4-phenoxyphenyl) propane ] diisocyanate, hexamethylene diisocyanate, 2, 4-trimethyl-hexamethylene diisocyanate, isophorone diisocyanate, 4' -dicyclohexylmethane diisocyanate, 2,4' -dicyclohexylmethane diisocyanate, lysine triisocyanate and the like, and specifically coroneate L (trade name manufactured by japan Polyurethane company) and the like can be used. As the melamine/formaldehyde resin, NIKALAC MX-45 (trade name, manufactured by Sanhe chemical Co., ltd.), MELAN (trade name, manufactured by Hitachi chemical industry Co., ltd.), or the like can be specifically used. As the epoxy resin, TETRAD-X (trade name, manufactured by Mitsubishi chemical Co., ltd.) or the like can be used. In the present invention, in particular, polyisocyanates are preferably used.
The amount of the compound (B) added is 0.1 part by mass or more based on 100 parts by mass of the polymer (a), and the adhesive layer is excellent in cohesive force. More preferably 0.5 parts by mass or more. In addition, an adhesive layer of 10 parts by mass or less is excellent in suppressing rapid gelation at the time of application, and workability such as blending and application of an adhesive is improved. More preferably 5 parts by mass or less.
In the present invention, the first adhesive layer 42 may contain a photopolymerization initiator (C). The photopolymerization initiator (C) contained in the first adhesive layer 42 is not particularly limited, and conventionally known ones can be used. Examples thereof include benzophenone compounds such as benzophenone, 4' -dimethylaminobenzophenone, 4' -diethylaminobenzophenone, and 4,4' -dichlorobenzophenone, acetophenone compounds such as acetophenone and diethoxyacetophenone, anthraquinone compounds such as 2-ethylanthraquinone and t-butylanthraquinone, 2-chlorothioxanthone, benzoin diethyl ether, benzoin isopropyl ether, benzil, 2,4, 5-triarylimidazole dimer (lofen dimer), and acridine compounds, and these compounds may be used singly or in combination of 2 or more. The amount of the photopolymerization initiator (C) to be added is preferably 0.1 part by mass or more, more preferably 0.5 part by mass or more, based on 100 parts by mass of the polymer (a). The upper limit is preferably 10 parts by mass or less, more preferably 5 parts by mass or less.
The energy ray-curable adhesive used in the present invention may optionally contain a tackifier, an adhesion regulator, a surfactant, or other modifier. In addition, an inorganic compound filler may be appropriately added.
When a radiation curable adhesive cured by irradiation with radiation is used for the first adhesive layer 42, the adhesive force to the SUS304 surface is preferably 1 to 10N/25mm when the peeling angle is 180 degrees and the peeling speed is 300mm/min under the conditions of 23 ℃ and 50% rh before irradiation with radiation.
(second adhesive layer 43)
The second adhesive layer 43 is preferably a radiation-non-curable layer that does not cure by irradiation with radiation.
As the resin for the radiation-non-curable second adhesive layer 43 that is not cured by irradiation with radiation, a copolymer containing a constituent unit derived from an alkyl (meth) acrylate monomer and a constituent unit derived from 2-hydroxypropyl acrylate, 2-hydroxyethyl (meth) acrylate and/or 2-hydroxybutyl acrylate, and containing a constituent unit derived from the alkyl (meth) acrylate monomer, can be used, and the copolymer is crosslinked with an isocyanate compound.
The second pressure-sensitive adhesive layer 43 preferably has an adhesive strength to the SUS304 surface of 0.1 to 0.6N/25mm, more preferably 0.1 to 0.4N/25mm, at a peeling angle of 180 degrees and a peeling speed of 300mm/min under conditions of 23℃and 50% RH.
When the adhesive force of the second adhesive layer 43 to the SUS304 surface is less than 0.1N/25mm, the chip C may be peeled off from the second adhesive layer 43 at the time of dicing when the semiconductor wafer W is diced into small-sized chips C, and the chips may be scattered. If the adhesive force of the second adhesive layer 43 to the SUS304 surface exceeds 0.6N/25mm, there is a possibility that the chip C with the adhesive layer 3 cannot be picked up when the semiconductor wafer W is cut into chips C of a large size.
In the present application, the adhesive force of the second adhesive layer 43 is: adhesive force in the state of the adhesive tape, that is, in the state where the adhesive layer 3 is not provided in the adhesive tape 1 for semiconductor processing. In the present embodiment, the adhesive force is the adhesive force when the base film 41, the first adhesive layer 42, and the second adhesive layer 43 are laminated in this order.
In order to achieve adhesion to the SUS304 surface within the above range, it is preferable to use a polypropylene oxide having a number average molecular weight of 3000 to 10000, which comprises an acrylic copolymer formed from 70 to 90 mass% of an alkyl (meth) acrylate monomer having 4 or more carbon atoms and 10 to 30 mass% of 2-hydroxypropyl acrylate and having a hydroxyl value of 45 to 100, and crosslinked with an isocyanate-based crosslinking agent.
Examples of the alkyl (meth) acrylate monomer having an alkyl group with a carbon number of 4 or more include butyl (meth) acrylate, hexyl (meth) acrylate, octyl (meth) acrylate, 2-methylpropyl (meth) acrylate, 2-methylbutyl (meth) acrylate, 2-ethylbutyl (meth) acrylate, 2-methylhexyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, 1, 2-dimethylbutyl (meth) acrylate, and lauryl (meth) acrylate, and particularly preferably have an alkyl group with a carbon number of 8 or more.
In the copolymer forming the binder, the constituent unit derived from the alkyl (meth) acrylate monomer having an alkyl group with a carbon number of 4 or more preferably contains 70 to 90 mass%. When the number of constituent units derived from the alkyl (meth) acrylate monomer is too large, the crosslinking point of the adhesive becomes small, and sufficient characteristics cannot be obtained, and when the number of constituent units derived from the alkyl (meth) acrylate monomer is too small, the usable time required for mixing the adhesive composition and applying the same to the base film 41 becomes short, and thus, the adhesive tape 1 for semiconductor processing of the present invention is not satisfactory.
It is also preferable to use 2-hydroxypropyl acrylate as the monomer having a crosslinkable functional group, and to contain 10 to 30% by mass of the monomer as the constituent unit. When a functional group-containing monomer such as 2-hydroxyethyl acrylate having a shorter chain length than 2-hydroxypropyl acrylate is used, the crosslinking reaction is fast and the usable time becomes short, which causes problems in that the progress of the crosslinking reaction becomes slow and the completion of the crosslinking reaction becomes extremely long when a long chain-length monomer such as 2-hydroxybutyl acrylate is used in the production of the adhesive tape 1 for semiconductor processing of the present invention. If the functional group-containing monomer is less than 10 mass%, the polarity is low, and the adhesion to the adherend is lowered, and if it exceeds 30 mass%, the adhesion to the adherend is excessive, and thus pick-up failure may occur.
The hydroxyl value of the acrylic copolymer in which the constituent unit derived from the alkyl (meth) acrylate monomer having an alkyl group with 4 or more carbon atoms is 70 to 90 mass% and the functional group-containing monomer is 2-hydroxyethyl acrylate and/or 2-hydroxypropyl acrylate is preferably 45 to 100mgKOH/g. When the hydroxyl value is less than 45mgKOH/g, the polarity is low, and the adhesion to the adherend is lowered, and chip scattering occurs, and when it exceeds 100mgKOH/g, the adhesion to the adherend is conversely excessive, and pick-up failure may occur.
The polypropylene oxide having a number average molecular weight of 3000 to 10000 is not particularly limited as long as it has a number average molecular weight of 3000 to 10000, and may be appropriately selected from known polypropylene oxides. When the number average molecular weight is less than 3000, the low molecular weight component is transferred to the surface of the adherend to increase the contamination, and when it exceeds 10000, the compatibility with the acrylic copolymer is deteriorated, and when the incompatible component is transferred to the surface of the adherend to increase the contamination, the number average molecular weight is preferably in the range of 3000 to 10000.
The blending amount of polypropylene oxide is not particularly limited, and may be appropriately adjusted within a range for obtaining a target adhesive force, and may be appropriately selected from a range of 0.5 to 5 parts by mass with respect to 100 parts by mass of the acrylic copolymer. When the amount of polypropylene oxide is less than 0.5 parts, chip scattering may occur, and when it exceeds 5 parts, pickup failure may occur.
The adhesion to the SUS304 surface can be adjusted by appropriately combining the carbon number of the alkyl group, the blending ratio of the alkyl (meth) acrylate monomer and 2-hydroxypropyl acrylate, the hydroxyl value, the number average molecular weight of polypropylene oxide, the blending ratio of polypropylene oxide, and the like.
The copolymer constituting the adhesive is crosslinked by an isocyanate compound. The isocyanate compound is not particularly limited, and examples thereof include aromatic isocyanates such as 4,4' -diphenylmethane diisocyanate, toluene diisocyanate, xylylene diisocyanate, 4' -diphenyl ether diisocyanate, 4' - [2, 2-bis (4-phenoxyphenyl) propane ] diisocyanate, hexamethylene diisocyanate, 2, 4-trimethyl-hexamethylene diisocyanate, isophorone diisocyanate, 4' -dicyclohexylmethane diisocyanate, 2,4' -dicyclohexylmethane diisocyanate, lysine diisocyanate, and lysine triisocyanate. Specifically, CORONATE L (trade name, manufactured by japan Polyurethane company) and the like can be used as commercial products.
The content of the isocyanate compound in the second adhesive layer 43 is preferably 2 to 12 parts by mass relative to 100 parts by mass of the copolymer. When the isocyanate compound is less than 2 parts by mass, crosslinking is insufficient, cohesiveness is low, and pickup failure increases. When the isocyanate compound exceeds 12 parts by mass, the usable time until the adhesive composition is mixed and film formation becomes short, and the production of the adhesive tape 1 for semiconductor processing of the present invention becomes an obstacle.
The pressure-sensitive adhesive composition used for forming the second pressure-sensitive adhesive layer 43 may contain, for example, known additives such as tackifiers, age resistors, fillers, colorants, flame retardants, antistatic agents, softeners, antioxidants, plasticizers, and surfactants, as necessary.
The second adhesive layer 43 may have a single layer or a laminated layer. When the second pressure-sensitive adhesive layer 432 is a plurality of layers, the pressure-sensitive adhesive layer in contact with the pressure-sensitive adhesive layer 3 preferably has an adhesive strength to the SUS304 surface of 0.1 to 0.6N/25mm at a peeling angle of 180 degrees and a peeling speed of 300mm/min under the conditions of 23℃and 50% RH.
The thickness of the second adhesive layer 43 is preferably set so that the total thickness of the second adhesive layer 42 is 5 to 30 μm, and more preferably set so that the total thickness of the second adhesive layer 42 is 10 to 15 μm, from the viewpoint of the pick-up property.
Although the above description has been made of the radiation-non-curable adhesive that is not cured by irradiation with radiation, the second adhesive layer 43 may be a radiation-curable adhesive that is cured by irradiation with radiation.
The composition of the radiation curable adhesive composition is not particularly limited, but as an embodiment, there is exemplified a composition having a polymer (a) as a base resin in the adhesive composition, the polymer (a) containing 60 mol% or more of a (meth) acrylic acid ester having an alkyl chain with a carbon number of 6 to 12 and having an energy ray curable carbon-carbon double bond with an iodine value of 5 to 30. Here, the energy ray refers to an ionizing radiation such as ultraviolet ray or electron ray.
In such a polymer (a), the effect of reducing the adhesive force after irradiation with energy rays is excellent in that the amount of energy ray-curable carbon-carbon double bonds introduced is 5 or more in terms of iodine number. More preferably 10 or more. Further, when the iodine value is 30 or less, the holding power of the chip after irradiation with energy rays until pickup is high, and the gap between the chips is easily expanded at the time of expansion immediately before the pickup step, which is excellent. When the gap between the chips can be sufficiently widened before the pickup step, the image recognition of each chip at the time of pickup becomes easy, and thus the pickup becomes easy, which is preferable. In addition, when the amount of carbon-carbon double bonds introduced is 5 to 30 in terms of iodine value, the polymer (A) itself is stable and can be easily produced, and is therefore preferable.
When the glass transition temperature of the polymer (A) is-70℃or higher, the polymer (A) is excellent in heat resistance against heat generated by irradiation with energy rays, and more preferably-66℃or higher. In addition, 15 ℃ or lower provides excellent chip scattering preventing effect after dicing of a wafer having a rough surface, and more preferably 0 ℃ or lower, and even more preferably-28 ℃ or lower.
The polymer (a) may be produced in any form, but for example, a compound obtained by mixing an acrylic copolymer with an energy ray-curable carbon-carbon double bond; and (b) reacting the functional group-containing acrylic copolymer or the functional group-containing methacrylic copolymer (A1) with the functional group-containing compound (A2) having an energy ray-curable carbon-carbon double bond.
Among them, the acrylic copolymer having a functional group or the methacrylic copolymer having a functional group (A1) may be obtained by copolymerizing a monomer (A1-1) having a carbon-carbon double bond such as an alkyl acrylate or an alkyl methacrylate and a monomer (A1-2) having a carbon-carbon double bond and having a functional group. Examples of the monomer (A1-1) include hexyl acrylate, n-octyl acrylate, isooctyl acrylate, 2-ethylhexyl acrylate, dodecyl acrylate, decyl acrylate, lauryl acrylate, and pentyl acrylate, n-butyl acrylate, isobutyl acrylate, ethyl acrylate, and methyl acrylate having an alkyl chain of 5 or less, and the same methacrylates as those.
In the monomer (A1-1), the component having 6 or more carbon atoms in the alkyl chain can reduce the peeling force between the second pressure-sensitive adhesive layer 43 and the pressure-sensitive adhesive layer 3, and therefore, is excellent in the pick-up property. The components of 12 or less have a low elastic modulus at room temperature and are excellent in the adhesion at the interface between the second adhesive layer 43 and the adhesive layer 3.
Further, as the monomer (A1-1), a monomer having a larger carbon number of the alkyl chain is used, the glass transition temperature is lower, and thus, by appropriately selecting, an adhesive composition having a desired glass transition temperature can be prepared. In addition to the glass transition temperature, a low molecular compound having a carbon-carbon double bond such as vinyl acetate, styrene, acrylonitrile, or the like may be blended for the purpose of improving various performances such as compatibility. In this case, these low-molecular compounds are blended in a range of 5 mass% or less based on the total mass of the monomer (A1-1).
On the other hand, examples of the functional group included in the monomer (A1-2) include carboxyl groups, hydroxyl groups, amino groups, cyclic acid anhydride groups, epoxy groups, isocyanate groups, and the like, and specific examples of the monomer (A1-2) include acrylic acid, methacrylic acid, cinnamic acid, itaconic acid, fumaric acid, phthalic acid (phthalic acid), 2-hydroxyalkyl acrylates, 2-hydroxyalkyl methacrylates, glycol monoacrylates, glycol monomethacrylates, N-methylolacrylamide, N-methylolmethacrylamide, allyl alcohol, N-alkylamino ethyl acrylate, N-alkylamino ethyl methacrylate, acrylamides, methacrylamides, maleic anhydride, itaconic anhydride, fumaric anhydride, phthalic anhydride (phthalic anhydride), glycidyl acrylate, glycidyl methacrylate, allyl glycidyl ether, and the like.
In the compound (A2), when the functional group of the functional group-containing acrylic copolymer or the functional group-containing methacrylic copolymer (A1) is a carboxyl group or a cyclic acid anhydride group, hydroxyl groups, epoxy groups, isocyanate groups, etc., hydroxyl groups, cyclic acid anhydride groups, isocyanate groups, etc., amino groups, epoxy groups, isocyanate groups, etc., epoxy groups, carboxyl groups, cyclic acid anhydride groups, amino groups, etc., are used, and specific examples thereof include the same groups as those exemplified for the specific examples of the monomer (A1-2). As the compound (A2), a compound in which a part of the isocyanate groups of the polyisocyanate compound is urethanized with a monomer having a hydroxyl group or a carboxyl group and an energy ray-curable carbon-carbon double bond may be used.
In the reaction between the functional group-containing acrylic copolymer (A1) or the functional group-containing methacrylic copolymer (A2), the unreacted functional group remains, and thus, the desired properties such as acid value and hydroxyl value can be produced. When OH groups remain so that the hydroxyl value of the polymer (A) becomes 5 to 100, the risk of picking up errors can be further reduced by reducing the adhesive force after irradiation with energy rays. When the hydroxyl value of the polymer (a) is 5 or more, the effect of reducing the adhesive force after irradiation with energy rays is excellent, and when it is 100 or less, the fluidity of the adhesive after irradiation with energy rays is excellent. When the acid value is 30 or less, the fluidity of the adhesive is excellent.
In the synthesis of the polymer (a), ketone, ester, alcohol, and aromatic solvents can be used as the organic solvent in the case of performing the reaction in solution polymerization, but among them, toluene, ethyl acetate, isopropyl alcohol, benzyl cellosolve, ethyl cellosolve, acetone, methyl ethyl ketone, and other solvents which are generally good solvents for acrylic polymers and have a boiling point of 60 to 120 ℃ are preferable, and as the polymerization initiator, azo-based, such as α, α' -azobisisobutyronitrile, and other radical generators, organic peroxide-based, such as benzoyl peroxide, and the like are generally used. In this case, a catalyst and a polymerization inhibitor may be used in combination as needed, and the polymerization temperature and the polymerization time may be adjusted to obtain the polymer (A) having a desired molecular weight. In addition, as for the adjustment of the molecular weight, a thiol or carbon tetrachloride-based solvent is preferably used. The reaction is not limited to solution polymerization, and may be performed by other methods such as bulk polymerization and suspension polymerization.
In the adhesive tape 1 for semiconductor processing of the present invention, the resin composition constituting the second adhesive layer 43 may further include a compound (B) functioning as a crosslinking agent in addition to the polymer (a). For example, polyisocyanates, melamine/formaldehyde resins, and epoxy resins may be used alone or in combination of 2 or more. The compound (B) reacts with the polymer (a) or the adhesive layer 3, and as a result, the cohesive force of the adhesive containing the polymers (a) and (B) as main components can be improved after the adhesive composition is applied, through the crosslinked structure.
The polyisocyanates include, but are not particularly limited to, for example, aromatic isocyanates such as 4,4' -diphenylmethane diisocyanate, toluene diisocyanate, xylylene diisocyanate, 4' -diphenyl ether diisocyanate, 4' - [2, 2-bis (4-phenoxyphenyl) propane ] diisocyanate, hexamethylene diisocyanate, 2, 4-trimethyl-hexamethylene diisocyanate, isophorone diisocyanate, 4' -dicyclohexylmethane diisocyanate, 2,4' -dicyclohexylmethane diisocyanate, lysine triisocyanate and the like, and specifically coroneate L (trade name, manufactured by japan Polyurethane company) and the like can be used. As the melamine/formaldehyde resin, NIKALAC MX-45 (trade name, manufactured by Sanhe chemical Co., ltd.), MELAN (trade name, manufactured by Hitachi chemical Co., ltd.), or the like can be specifically used. As the epoxy resin, TETRAD-X (trade name, manufactured by Mitsubishi chemical Co., ltd.) or the like can be used. In the present invention, in particular, polyisocyanates are preferably used.
The amount of the compound (B) added is 0.1 part by mass or more based on 100 parts by mass of the polymer (a), and the adhesive layer is excellent in cohesive force. More preferably 0.5 parts by mass or more. In addition, an adhesive layer of 10 parts by mass or less is excellent in suppressing rapid gelation at the time of application, and the workability such as the blending of the adhesive and the application becomes good. More preferably 5 parts by mass or less.
In the present invention, the second adhesive layer 43 may contain a photopolymerization initiator (C). The photopolymerization initiator (C) contained in the second pressure-sensitive adhesive layer 43 is not particularly limited, and conventionally known ones can be used. Examples thereof include benzophenone compounds such as benzophenone, 4' -dimethylaminobenzophenone, 4' -diethylaminobenzophenone, and 4,4' -dichlorobenzophenone, acetophenone compounds such as acetophenone and diethoxyacetophenone, anthraquinone compounds such as 2-ethylanthraquinone and t-butylanthraquinone, 2-chlorothioxanthone, benzoin diethyl ether, benzoin isopropyl ether, benzil, 2,4, 5-triarylimidazole dimer (lofen dimer), and acridine compounds, and these compounds may be used singly or in combination of 2 or more. The amount of the photopolymerization initiator (C) to be added is preferably 0.1 part by mass or more, more preferably 0.5 part by mass or more, based on 100 parts by mass of the polymer (a). The upper limit is preferably 10 parts by mass or less, more preferably 5 parts by mass or less.
The energy ray-curable adhesive used in the present invention may optionally contain a tackifier, an adhesion regulator, a surfactant, or other modifier. In addition, an inorganic compound filler may be appropriately added.
When a radiation curable adhesive cured by irradiation with radiation is used for the second adhesive layer 43, the adhesive force to the SUS304 surface is preferably 0.1 to 0.6N/25mm when the peeling angle is 180 degrees and the peeling speed is 300mm/min under the conditions of 23 ℃ and 50% rh before irradiation with radiation.
(adhesive layer 3)
In the tape 1 for semiconductor processing of the present invention, the adhesive layer 3 is peeled from the adhesive layer 43 and attached to the chip C when the chip C is picked up after the semiconductor wafer W is bonded and diced. Then, the adhesive is used as an adhesive for fixing the chip C to a substrate or a lead frame.
The adhesive layer 3 is not particularly limited, and a film-like adhesive commonly used in semiconductor wafers may be used, and examples thereof include thermoplastic resins and thermally polymerizable components. The thermoplastic resin used in the adhesive layer 3 of the present invention is preferably a resin having a thermoplastic property or a resin having a thermoplastic property in an uncured state and forming a crosslinked structure after heating, but one embodiment is a thermoplastic resin having a weight average molecular weight of 5000 to 200,000 and a glass transition temperature of 0 to 150 ℃. In addition, another embodiment is a thermoplastic resin having a weight average molecular weight of 100,000 ～ 1,000,000 and a glass transition temperature of-50 to 20 ℃.
Examples of the thermoplastic resin include polyimide resins, polyamide resins, polyetherimide resins, polyamideimide resins, polyester resins, polyesterimide resins, phenoxy resins, polysulfone resins, polyethersulfone resins, polyphenylene sulfide resins, and polyetherketone resins, among which polyimide resins and phenoxy resins are preferably used, and polymers containing functional groups are preferably used as the thermoplastic resin of the former.
The polyimide resin can be obtained by condensation reaction of tetracarboxylic dianhydride (a water-soluble compound of TECHARACID) with diamine by a known method. That is, the addition reaction is carried out in an organic solvent using equimolar or nearly equimolar amounts of tetracarboxylic dianhydride and diamine (the order of addition of the components is arbitrary) at a reaction temperature of 80℃or less, preferably 0 to 60 ℃. The viscosity of the reaction solution gradually increases with the progress of the reaction, and polyamic acid, which is a precursor of polyimide, is produced. The polyamide acid can be depolymerized by heating at 50 to 80℃to adjust the molecular weight. The polyimide resin can be obtained by dehydrating and ring-closing the above reactant (polyamic acid). The dehydration ring closure may be performed by a thermal ring closure method of heat treatment, and a chemical ring closure method using a dehydrating agent.
The tetracarboxylic dianhydride used as the raw material of the polyimide resin is not particularly limited, and for example, 1,2- (ethylene) bis (trimellitic anhydride), 1,3- (trimethylene) bis (trimellitic anhydride), 1,4- (tetramethylene) bis (trimellitic anhydride), 1,5- (pentamethylene) bis (trimellitic anhydride), 1,6- (hexamethylene) bis (trimellitic anhydride), 1,7- (heptamethylene) bis (trimellitic anhydride), 1,8- (octamethylene) bis (trimellitic anhydride), 1,9- (nonamethylene) bis (trimellitic anhydride), 1,10- (decamethylene) bis (trimellitic anhydride), 1,12- (dodecamethylene) bis (trimellitic anhydride), 1,16- (hexadecamethylene) bis (trimellitic anhydride), 1,18- (octadecene) bis (trimellitic anhydride), pyromellitic dianhydride, 3',4,4' -biphenyltetracarboxylic dianhydride, 2',3,3' -Biphenyltetracarboxylic acid dianhydride, 2-bis (3, 4-dicarboxyphenyl) propane dianhydride, 2-bis (2, 3-dicarboxyphenyl) propane dianhydride, 1-bis (2, 3-dicarboxyphenyl) ethane dianhydride, 1-bis (3, 4-dicarboxyphenyl) ethane dianhydride, bis (2, 3-dicarboxyphenyl) methane dianhydride, bis (3, 4-dicarboxyphenyl) methane dianhydride, bis (3, 4-dicarboxyphenyl) sulfonic dianhydride, 3,4,9, 10-perylenetetracarboxylic dianhydride, bis (3, 4-dicarboxyphenyl) ether dianhydride, benzene-1, 2,3, 4-tetracarboxylic dianhydride, 3,4,3',4' -benzophenone tetracarboxylic dianhydride, 2,3,2',3' -benzophenone tetracarboxylic dianhydride, 3',4' -benzophenone tetracarboxylic dianhydride, 1,2,5, 6-naphthalene tetracarboxylic dianhydride, 1,4,5, 8-naphthalene tetracarboxylic dianhydride, 2,3,6, 7-naphthalene tetracarboxylic dianhydride, 1,2,4, 5-naphthalene tetracarboxylic dianhydride, 2, 6-dichloro-naphthalene-1, 4,5, 8-tetracarboxylic dianhydride, 2, 7-dichloro-naphthalene-1, 4,5, 8-tetracarboxylic dianhydride, 2,3,6, 7-tetrachloronaphthalene-1, 4,5, 8-tetracarboxylic dianhydride, phenanthrene-1,8,9,10-tetracarboxylic dianhydride, pyrazine-2, 3,5, 6-tetracarboxylic dianhydride, thiophene-2, 3,5, 6-tetracarboxylic dianhydride, 2, 3',4' -Biphenyltetracarboxylic acid dianhydride, 3,4,3',4' -Biphenyltetracarboxylic acid dianhydride, 2,3,2',3' -Biphenyltetracarboxylic acid dianhydride, bis (3, 4-dicarboxyphenyl) dimethylsilane dianhydride, bis (3, 4-dicarboxyphenyl) methylphenylsilane dianhydride, bis (3, 4-dicarboxyphenyl) biphenylsilane dianhydride, 1, 4-bis (3, 4-dicarboxyphenyl dimethylsilyl) benzene dianhydride, 1, 3-bis (3, 4-dicarboxyphenyl) -1, 3-tetramethyldicyclohexyl dianhydride, p-phenylene bis (trimellitic anhydride), ethylene tetracarboxylic acid dianhydride, 1,2,3, 4-butanetetracarboxylic acid dianhydride, decalin-1, 4,5, 8-tetracarboxylic dianhydride, 4, 8-dimethyl-1, 2,3,5,6, 7-hexahydronaphthalene-1, 2,5, 6-tetracarboxylic dianhydride, cyclopentane-1, 2,3, 4-tetracarboxylic dianhydride, pyrrolidine-2, 3,4, 5-tetracarboxylic dianhydride, 1,2,3, 4-cyclobutane tetracarboxylic dianhydride, bis (exo-bicyclo [2, 1] heptane-2, 3-dicarboxylic dianhydride, bicyclo- [2, 2] -oct-7-ene-2, 3,5, 6-tetracarboxylic dianhydride, 2-bis (3, 4-dicarboxyphenyl) hexafluoropropane dianhydride, 2-bis [4- (3, 4-dicarboxyphenyl) phenyl ] hexafluoropropane dianhydride, 4' -bis (3, 4-dicarboxyphenoxy) diphenyl sulfide dianhydride, 1, 4-bis (2-hydroxyhexafluoroisopropyl) benzene anhydride, 1, 4-bis (2, 2-hydroxy isopropyl) benzene anhydride, 1, 2-bis (3, 5-dimethylene) benzene anhydride, 2, 3-bis (2, 5-dimethylene) benzene anhydride, and the like may be used as well as these compounds.
The diamine used as the raw material of the polyimide is not particularly limited, for example, o-phenylenediamine, m-phenylenediamine, p-phenylenediamine, 3 '-diaminodiphenyl ether, 3,4' -diaminodiphenyl ether, 4 '-diaminodiphenyl ether, 3' -diaminodiphenyl methane, 3,4 '-diaminodiphenyl methane, 4' -diaminodiphenyl ether methane, and the like can be used bis (4-amino-3, 5-dimethylphenyl) methane, bis (4-amino-3, 5-diisopropylphenyl) methane, 3 '-diaminodiphenyl difluoromethane, 3,4' -diaminodiphenyl difluoromethane, 4 '-diaminodiphenyl difluoromethane, 3' -diaminodiphenyl sulfone, 3,4 '-diaminodiphenyl sulfone bis (4-amino-3, 5-dimethylphenyl) methane, bis (4-amino-3, 5-diisopropylphenyl) methane, 3' -diaminodiphenyl difluoromethane 3,4 '-diaminodiphenyl difluoromethane, 4' -diaminodiphenyl difluoromethane, 3 '-diaminodiphenyl sulfone, 3,4' -diaminodiphenyl sulfone, 1, 4-bis (3-aminophenoxy) benzene, 1, 4-bis (4-aminophenoxy) benzene, 3' - (1, 4-phenylenebis (1-methylethylene)) diphenylamine, 3,4' - (1, 4-phenylenebis (1-methylethylene)) diphenylamine, 4' - (1, 4-phenylenebis (1-methylethylene)) diphenylamine 2, 2-bis (4- (3-aminophenoxy) phenyl) propane, 2-bis (4- (4-aminophenoxy) phenyl) propane, 2-bis (4- (3-aminophenoxy) phenyl) hexafluoropropane, 2-bis (4- (4-aminophenoxy) phenyl) hexafluoropropane aromatic diamines such as bis (4- (3-aminophenoxy) phenyl) sulfide, bis (4- (4-aminophenoxy) phenyl) sulfide, bis (4- (3-aminophenoxy) phenyl) sulfone, bis (4- (4-aminophenoxy) phenyl) sulfone, 3, 5-diaminobenzoic acid, 1, 2-diaminoethane, 1, 3-diaminopropane, 1, 4-diaminobutane, 1, 5-diaminopentane, 1, 6-diaminohexane, 1, 7-diaminoheptane, 1, 8-diaminooctane, 1, 9-diaminononane, 1, 10-diaminodecane, aliphatic diamines such as 1, 11-diaminoundecane, 1, 12-diaminododecane, 1, 2-diaminocyclohexane, diaminopolysiloxane represented by the following general formula (1), 1, 3-bis (aminomethyl) cyclohexane, and polyoxyalkylene diamine manufactured by SANTECHNOCHEMICAL Co., ltd., JEFFAMINE D-230, D-400, D-2000, D-4000, ED-600, ED-900, ED-2001, and EDR-148, and the like. These may be used in combination of 1 or 2 or more. The glass transition temperature of the polyimide resin is preferably 0 to 200℃and the weight average molecular weight is preferably 1 to 20 tens of thousands.
[ chemical formula 1 ]
(wherein R is 1 R is R 2 R represents a divalent hydrocarbon group having 1 to 30 carbon atoms, which may be the same or different from each other 3 R is R 4 And each represents a monovalent hydrocarbon group, which may be the same or different, and m is an integer of 1 or more. )
The phenoxy resin, which is one of the above-mentioned thermoplastic resins, is preferably a resin obtained by a method of reacting various bisphenols with epichlorohydrin or a method of reacting a liquid epoxy resin with bisphenol, and examples of bisphenol include bisphenol a, bisphenol AF, bisphenol AD, bisphenol F, and bisphenol S. The phenoxy resin has a structure similar to that of the epoxy resin, and therefore has excellent compatibility with the epoxy resin, and is suitable for imparting excellent adhesion to the adhesive film.
Examples of the phenoxy resin used in the present invention include resins having a repeating unit represented by the following general formula (2).
[ chemical formula 2 ]
In the above general formula (2), X represents a single bond or a 2-valent linking group. As the 2-valent linking group, there may be mentioned alkylene groups, phenylene groups, -O-, -S-, -SO-, or-SO-, respectively 2 -. Here, the alkylene group is preferably an alkylene group having 1 to 10 carbon atoms, more preferably-C (R 1 )(R 2 )-。R 1 、R 2 The alkyl group is preferably a straight-chain or branched alkyl group having 1 to 8 carbon atoms, and examples thereof include methyl, ethyl, n-propyl, isopropyl, isooctyl, 2-ethylhexyl, and 1, 3-trimethylbutyl. The alkyl group may be substituted with a halogen atom, and examples thereof include trifluoromethyl. X is preferably alkylene, -O-, -S-, fluorenyl or-SO 2 -, more preferably alkylene, -SO 2 -. Of these, preferred is-C (CH) 3 ) 2 -、-CH(CH 3 )-、-CH 2 -、-SO 2 -, more preferably-C (CH) 3 ) 2 -、-CH(CH 3 )-、-CH 2 -, particularly preferably-C (CH) 3 ) 2 -。
The phenoxy resin represented by the above general formula (2) may be a resin having a plurality of repeating units having different X of the above general formula (2) or may be composed of only repeating units having the same X. In the present invention, a resin composed of only repeating units in which X is the same is preferable.
In addition, when the phenoxy resin represented by the above general formula (2) contains a polar substituent such as a hydroxyl group or a carboxyl group, the compatibility with a thermally polymerizable component is improved, and a uniform appearance or characteristic can be imparted.
When the mass average molecular weight of the phenoxy resin is 5000 or more, the phenoxy resin is excellent in film formability. More preferably 10,000 or more, and still more preferably 30,000 or more. When the mass average molecular weight is 150,000 or less, fluidity at the time of thermocompression bonding and compatibility with other resins are preferable. More preferably 100,000 or less. Further, when the glass transition temperature is-50℃or higher, the film-forming property is excellent, and it is more preferably 0℃or higher, and still more preferably 50℃or higher. When the glass transition temperature is 150 ℃, the adhesive force of the adhesive layer 13 at the time of die bonding is excellent, and more preferably 120 ℃ or less, and still more preferably 110 ℃ or less.
On the other hand, examples of the functional group of the polymer containing the functional group include glycidyl group, acryl group, methacryl group, hydroxyl group, carboxyl group, isocyanurate group, amino group, amide group, and the like, and among them, glycidyl group is preferable.
Examples of the high molecular weight component containing the functional group include (meth) acrylic copolymers containing functional groups such as glycidyl groups, hydroxyl groups, and carboxyl groups.
As the (meth) acrylic copolymer, for example, a (meth) acrylate copolymer, an acrylic rubber, or the like can be used, and an acrylic rubber is preferable. The acrylic rubber is a rubber containing an acrylic ester as a main component and mainly comprising a copolymer of butyl acrylate and acrylonitrile or the like, or a copolymer of ethyl acrylate and acrylonitrile or the like.
When the functional group contains a glycidyl group, the amount of the repeating unit containing a glycidyl group is preferably 0.5 to 6.0 wt%, more preferably 0.5 to 5.0 wt%, and particularly preferably 0.8 to 5.0 wt%. The glycidyl group-containing repeating unit means a constituent monomer of a glycidyl group-containing (meth) acrylic copolymer, specifically, glycidyl acrylate or glycidyl methacrylate. When the amount of the glycidyl group-containing repeating unit falls within this range, the adhesion can be ensured and gelation can be prevented.
Examples of the constituent monomer of the (meth) acrylic copolymer other than glycidyl acrylate and glycidyl methacrylate include ethyl (meth) acrylate and butyl (meth) acrylate, and these may be used alone or in combination of 2 or more. In the present invention, ethyl (meth) acrylate means ethyl acrylate and/or ethyl methacrylate. The mixing ratio when the functional monomers are used in combination may be determined in consideration of the glass transition temperature of the (meth) acrylic copolymer. When the glass transition temperature is-50 ℃ or higher, it is preferable in terms of excellent film formability and capable of suppressing excessive tackiness under normal temperature conditions. When the tackiness at normal temperature is excessive, the handling of the adhesive layer becomes difficult. More preferably at least-20℃and still more preferably at least 0 ℃. When the glass transition temperature is 30 ℃ or lower, the adhesive layer is excellent in adhesion at the time of die bonding, and more preferably 20 ℃ or lower.
When the above monomer is polymerized to produce a high molecular weight component containing a functional monomer, the polymerization method is not particularly limited, and for example, a method such as bead polymerization or solution polymerization can be used, and among them, bead polymerization is preferable.
In the present invention, when the weight average molecular weight of the high molecular weight component containing the functional monomer is 100,000 or more, the film formability is excellent, more preferably 200,000 or more, and still more preferably 500,000 or more. When the weight average molecular weight is adjusted to 2,000,000 or less, the adhesive layer 3 is excellent in improving the heat fluidity at the time of die bonding. When the heat fluidity of the adhesive layer 3 at the time of die bonding is improved, the adhesion between the adhesive layer 3 and the adherend is improved, the adhesion can be improved, and the irregularities of the adherend are embedded, so that voids are easily suppressed. More preferably 1,000,000 or less, still more preferably 800,000 or less, and when 500,000 or less, a significant effect can be further obtained.
The thermal polymerization component is not particularly limited as long as it is polymerized by heat, and examples thereof include a compound having a functional group such as a glycidyl group, an acryl group, a methacryl group, a hydroxyl group, a carboxyl group, an isocyanurate group, an amino group, an amide group, and the like, and a trigger material, and these may be used alone or in combination of 2 or more, but in view of heat resistance as the adhesive layer 3, it is preferable that a thermosetting resin which is cured by heat and gives an adhesive effect, and a curing agent and an accelerator are contained together. Examples of the thermosetting resin include epoxy resin, acrylic resin, silicone resin, phenol resin, thermosetting polyimide resin, urethane resin, melamine resin, urea resin, and the like, and epoxy resin is most preferably used in order to obtain an adhesive layer excellent in heat resistance, workability, and reliability.
The epoxy resin is not particularly limited as long as it has an adhesive effect by curing, and a difunctional epoxy resin such as bisphenol a epoxy, a novolac epoxy resin such as phenol novolac epoxy resin and cresol novolac epoxy resin, and the like can be used. Further, a general known epoxy resin such as a polyfunctional epoxy resin, a glycidyl amine type epoxy resin, a heterocyclic ring-containing epoxy resin, or an alicyclic epoxy resin can be used.
Examples of the bisphenol A type epoxy resin include Epicoat series (Epicoat 807, epicoat815, epicoat825, epicoat827, epicoat828, epicoat834, epicoat1001, epicoat1004, epicoat1007, epicoat 1009) manufactured by Mitsubishi chemical Co., ltd., DER-330, DER-301, DER-361, YD8125 and YDF8170 manufactured by New day iron and gold chemical Co., ltd.). Examples of the phenol novolac type epoxy resin include Epicoat152, epicoat154, EPPN-201, and DEN-438, respectively, manufactured by mitsubishi chemical Co., ltd., and examples of the o-cresol novolac type epoxy resin include EOCN-102S, EOCN-103S, EOCN-104S, EOCN-1012, EOCN-1025, EOCN-1027, and YDCN701, YDCN702, YDCN703, and YDCN704, respectively, manufactured by new japanese iron and gold chemical Co., ltd. Examples of the polyfunctional epoxy resin include ARALDITE0163, NAGASECHEMTEX DENACOL EX-611, EX-614-B, EX-622, EX-512, EX-521, EX-421, EX-411, EX-321, etc. manufactured by Epon1031S, ciba Speciality Chemiacls, mitsubishi chemical Co., ltd. Examples of the amine-type epoxy resin include Epicoat604 manufactured by Mitsubishi chemical corporation, YH-434 manufactured by Dongdu chemical corporation, TETRAD-X and TETRAD-C manufactured by Mitsubishi gas chemical corporation, and ELM-120 manufactured by Sumitomo chemical corporation. Examples of the heterocyclic ring-containing epoxy resin include ARALDITE PT810 manufactured by Ciba Speciality Chemiacls, ERL4234, ERL4299, ERL4221, ERL4206 manufactured by UCC, and the like. These epoxy resins may be used alone or in combination of 2 or more.
In order to cure the thermosetting resin, an additive may be added as appropriate. Examples of such additives include a curing agent, a curing accelerator, and a catalyst, and when the catalyst is added, a cocatalyst can be used as needed.
When an epoxy resin is used as the thermosetting resin, an epoxy resin curing agent or a curing accelerator is preferably used, and these are more preferably used in combination. Examples of the curing agent include phenol resins, dicyandiamide, boron trifluoride complexes, organic hydrazide compounds, amines, polyamide resins, imidazole compounds, urea or thiourea compounds, polythiol compounds, polythioether resins having mercapto groups at the terminals, acid anhydrides, and photo/ultraviolet curing agents. These may be used singly or in combination of 2 or more.
Among them, boron trifluoride-amine complexes with various amine compounds (preferably primary amine compounds) are exemplified, and as the organic hydrazide compound, isophthalhydrazide is exemplified.
Examples of the phenol resin include phenol novolac resins, phenol aralkyl resins, cresol novolac resins, t-butylphenol novolac resins, novolac resins such as nonylphenol novolac resins, resol-type phenol resins, polyhydroxystyrenes such as poly-p-hydroxystyrene, and the like. Among them, a phenolic compound having at least 2 phenolic hydroxyl groups in the molecule is preferable.
Examples of the phenolic compound having at least 2 phenolic hydroxyl groups in the molecule include phenol novolac resins, cresol novolac resins, t-butylphenol novolac resins, dicyclopentadiene cresol novolac resins, dicyclopentadiene phenol novolac resins, xylylene-modified phenol novolac resins, naphthol novolac resins, triphenol novolac resins, tetraphenol novolac resins, bisphenol a novolac resins, poly-para-vinylnovolac resins, phenol aralkyl resins, and the like. Among these phenolic resins, phenol novolac resins and phenol aralkyl resins are particularly preferable, and they can improve the connection reliability.
Examples of the amine include a chain aliphatic amine (diethylenetriamine, triethylenetetramine, hexamethylenediamine, N-dimethylpropylamine, benzyldimethylamine, 2- (dimethylamino) phenol, 2,4, 6-tris (dimethylaminomethyl) phenol, m-xylylenediamine, etc.), a cyclic aliphatic amine (N-aminoethylpiperazine, bis (3-methyl-4-aminocyclohexyl) methane, bis (4-aminocyclohexyl) methane, menthylenediamine, isophoronediamine, 1, 3-bis (aminomethyl) cyclohexane, etc.), a heterocyclic amine (piperazine, N-dimethylpiperazine, triethylenediamine, melamine, guanamine, etc.), an aromatic amine (metaphenylene diamine, 4' -diaminodiphenylmethane, diamino (japanese: and the like), polyamide resins (polyamidoamine is preferable, condensate of dimer acid and polyamine), imidazole compounds (2-phenyl-4, 5-dihydroxymethylimidazole, 2-methylimidazole, 2, 4-dimethylimidazole, 2-N-heptadecylimidazole, 1-nitriloethyl-2-undecylimidazolium-trimellitate, epoxy-imidazole adduct and the like), urea or thiourea compounds (N, N-dialkylurea compound, N-dialkylthiourea compound, etc.), polythiol compound, polythioether resin having mercapto group at the terminal, acid anhydride (tetrahydrophthalic anhydride, etc.), and the like, photo/ultraviolet curing agents (diphenyliodonium hexafluorophosphate, triphenylsulfonium hexafluorophosphate, and the like).
The curing accelerator is not particularly limited as long as it cures the thermosetting resin, and examples thereof include imidazoles, dicyandiamide derivatives, dicarboxylic dihydrazide, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-ethyl-4-methylimidazole-tetraphenylborate, 1, 8-diazabicyclo [5.4.0] undecene-7-tetraphenylborate, and the like. Examples of imidazoles include imidazole, 2-methylimidazole, 2-ethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-ethylimidazole, 1-benzyl-2-ethyl-5-methylimidazole, 2-phenyl-4-methyl-5-hydroxydimethylimidazole, and 2-phenyl-4, 5-dihydroxymethylimidazole.
The content of the curing agent or curing accelerator for epoxy resin in the adhesive layer is not particularly limited, and the optimum content varies depending on the kind of the curing agent or curing accelerator.
The ratio of the epoxy resin to the phenolic resin is preferably, for example, such that the hydroxyl group in the phenolic resin is 0.5 to 2.0 equivalents per 1 equivalent of the epoxy group in the epoxy resin component. More preferably 0.8 to 1.2 equivalents. That is, when the mixing ratio of the two is out of the above range, the sufficient curing reaction cannot be advanced, and the properties of the adhesive layer 3 are liable to deteriorate. In one embodiment, the amount of the curing agent is 0.5 to 20 parts by mass relative to 100 parts by mass of the thermosetting resin, and in another embodiment, the amount of the curing agent is 1 to 10 parts by mass. The content of the curing accelerator is preferably less than the content of the curing agent, and the curing accelerator is preferably 0.001 to 1.5 parts by mass, more preferably 0.01 to 0.95 parts by mass, based on 100 parts by mass of the thermosetting resin. By adjusting the amount within the above range, the progress of the curing reaction can be sufficiently assisted. The content of the catalyst is preferably 0.001 to 1.5 parts by mass, more preferably 0.01 to 1.0 parts by mass, based on 100 parts by mass of the thermosetting resin.
The adhesive layer 3 of the present invention may be appropriately mixed with a filler according to the application. This can improve the cutting property of the adhesive layer 3 in an uncured state, improve the handling property, adjust the melt viscosity, impart thixotropic properties, impart thermal conductivity to the cured adhesive layer 3, and improve the adhesive strength.
The filler used in the present invention is preferably an inorganic filler. The inorganic filler is not particularly limited, and for example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica, amorphous silica, antimony oxide, and the like can be used. In addition, these may be used singly or in combination of 2 or more.
Among the above inorganic fillers, alumina, aluminum nitride, boron nitride, crystalline silica, amorphous silica, and the like are preferably used from the viewpoint of improving thermal conductivity. In addition, from the viewpoints of adjustment of melt viscosity and imparting thixotropic properties, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, crystalline silica, amorphous silica, and the like are preferably used. In addition, alumina and silica are preferably used from the viewpoint of improving the cutting property.
When the content of the filler is 30 mass% or more, the wire bonding property is excellent. In wire bonding, the storage modulus after curing of the adhesive layer 3 for bonding the chips by wire bonding is preferably adjusted to a range of 20 to 1000MPa at 170 ℃, and when the content of the filler is 30 mass% or more, the storage modulus after curing of the adhesive layer 3 is easily adjusted to the range. When the content of the filler is 75 mass% or less, the film formability and the heat fluidity of the adhesive layer 3 at the time of die bonding are excellent. When the heat fluidity of the adhesive layer 3 at the time of die bonding is improved, the adhesion between the adhesive layer 3 and the adherend is improved, the adhesion can be improved, and the irregularities of the adherend can be easily embedded to suppress voids. More preferably 70 mass% or less, and still more preferably 60 mass% or less.
The adhesive layer 3 of the present invention may contain 2 or more kinds of fillers having different average particle diameters as the filler. In this case, as compared with the case of using a single filler, the viscosity increase in the raw material mixture before film formation or the viscosity decrease in the case of low filler content can be easily prevented, and good film formability can be easily obtained, and the fluidity of the uncured adhesive layer 3 can be optimally controlled, and excellent adhesive force can be obtained after curing of the adhesive layer 3.
(base material adhesive tape 2)
The base tape 2 is provided for the purpose of protecting the adhesive layer 3, for the purpose of facilitating the label processing of cutting the semiconductor processing tape 1 into a specific shape, and for the purpose of smoothing the adhesive layer 3. Examples of the constituent material of the base tape 2 include synthetic resin films such as paper, polyethylene, polypropylene, and polyethylene terephthalate. In order to improve the releasability from the adhesive layer 3, the surface of the base tape 2 may be subjected to a release treatment such as silicone treatment, long-chain alkyl treatment, or fluorine treatment, as necessary. Further, the pressure-sensitive adhesive sheet may be subjected to an ultraviolet ray prevention treatment as needed so as not to react with ambient ultraviolet rays. The thickness of the base tape 2 is usually 10 to 100. Mu.m, preferably about 25 to 50. Mu.m.
(support Member 15)
The support member 15 is provided on the opposite surface of the base tape 2 to the surface on which the adhesive layer 3 and the adhesive tape 4 are provided, and is provided on both ends in the short side direction of the base tape 2, and has a thickness of 1.0 to 4.0 times the thickness of the adhesive layer 3 and the second adhesive layer 43. By providing the support member 15 in this manner, the winding pressure applied to the adhesive tape 1 can be dispersed or concentrated on the support member 15 when the adhesive tape 1 is wound into a roll, and therefore, the formation of transfer marks for transferring the level difference to the surface of the flexible adhesive layer 3 by overlapping the level difference between the adhesive layer 3 and the laminated portions of the label portions 4a1 and 4a2 of the adhesive tape 4 and the peripheral portion 4b of the adhesive tape 4 can be suppressed.
The support member 15 may be provided intermittently or continuously along the longitudinal direction of the base tape 2, but is preferably provided continuously along the longitudinal direction of the base tape 2 from the viewpoint of more effectively suppressing the occurrence of transfer marks.
As the support member 15, for example, an adhesive tape obtained by applying an adhesive to a resin film base material can be suitably used. By bonding such an adhesive tape to predetermined positions of both end portions of the base tape 2, the semiconductor processing tape 1 of the present embodiment can be formed.
The base resin of the adhesive tape is not particularly limited as long as it can withstand the winding pressure, and is preferably selected from polyethylene terephthalate (PET), polypropylene, and high-density polyethylene from the viewpoints of heat resistance, smoothness, and easiness of handling.
The composition and physical properties of the adhesive tape are not particularly limited, as long as the adhesive is not peeled off from the base tape 2 in the winding step and the storage step of the adhesive tape 1 for semiconductor processing.
(method for producing semiconductor processing tape 1)
Next, an example of a method for manufacturing the semiconductor processing tape 1 according to the present embodiment will be described.
First, the adhesive layer 3 in the form of a long film is formed. The adhesive layer 3 may be formed by a conventional method of preparing a resin composition and forming a film-like layer. Specifically, examples of the method include a method of applying the above resin composition to an appropriate separator (such as release paper) and drying the same (when heat curing is required, the drying is performed by heating if necessary), and the like, to form the adhesive layer 3. The resin composition may be a solution or a dispersion.
Next, the adhesive layer 3 is precut into the above-described planar shape using a platen cutter or the like, and the peripheral unnecessary portion is peeled off from the spacer, whereby the plurality of planar-shaped adhesive layers 3 are continuously formed on the elongated spacer. Thereafter, the adhesive layer 3 is transferred to the long base tape 2. The adhesive layer 3 may be formed by applying a resin composition to the long base tape 2 and precutting the resin composition into a planar shape.
Further, a second adhesive layer 43 in the form of an elongated film is formed. The second adhesive layer 43 may be formed by a conventional method of preparing a resin composition and forming a film-like layer. Specifically, for example, a method of applying the above resin composition to an appropriate spacer (such as release paper) and drying the same to form the second pressure-sensitive adhesive layer 43 may be mentioned. The resin composition may be a solution or a dispersion.
Next, the second adhesive layer 43 is precut into the above-described planar shape using a platen cutter or the like, and unnecessary portions of the periphery are peeled off from the spacers, whereby a plurality of planar-shaped second adhesive layers 43 are continuously formed on the elongated spacers.
In addition, the first adhesive layer 42 is fabricated. The first adhesive layer 42 can be formed by a conventional method for forming an adhesive layer. For example, the first pressure-sensitive adhesive layer 42 may be formed on the substrate film 41 by a method of forming the pressure-sensitive adhesive composition by applying the pressure-sensitive adhesive composition to a predetermined surface of the substrate film 41, or by a method of forming the first pressure-sensitive adhesive layer 42 by applying the pressure-sensitive adhesive composition to a release film (for example, a plastic film or sheet coated with a release agent) and then transferring the first pressure-sensitive adhesive layer 42 to a predetermined surface of the substrate film 41.
The base film 41 can be formed by a conventional known film forming method. Examples of the film forming method include a calender film forming method, a casting method using an organic solvent, a blow molding extrusion method in a closed system, a T-die extrusion method, a coextrusion method, and a dry lamination method.
Then, the first adhesive layer 42 provided on the base film 41 is laminated on the second adhesive layer 43 provided on the spacer in a specific shape, to obtain the adhesive tape 4.
Then, the spacer provided on the second adhesive layer 43 is peeled off, and the adhesive layer 3 and the center of the planar shape of the second adhesive layer 43 are laminated on the surface of the adhesive tape 4 on the second adhesive layer 43 side of the adhesive layer 3 having a specific shape provided on the base tape 2 so as to be aligned. At this time, the planar shape of the adhesive layer 3 is larger than the planar shape of the second adhesive layer 43, and therefore, the first adhesive layer 42 is in contact with and bonded to the adhesive layer 3 at the peripheral portion of the second adhesive layer 43.
Next, the base film 41 and the first adhesive layer 42 are precut into a predetermined planar shape using a doctor blade or the like, and unnecessary portions of the periphery are peeled off from the base tape 2, thereby producing the tape 1 for semiconductor processing. At this time, the planar shape of the first adhesive layer 42 is larger than the planar shape of the adhesive layer 3, and therefore, the portion where the first adhesive layer 42 contacts the adhesive layer 3 is maintained at the peripheral portion of the second adhesive layer 43. After that, the base tape 2 used for the precut process may be peeled off, and a known spacer may be bonded to the surface of the adhesive layer 3 side.
(method for Using semiconductor processing tape 1)
The semiconductor processing tape 1 is used in the following manner in the manufacturing process of the semiconductor device. As shown in fig. 3, in the tape 1 for semiconductor processing, a semiconductor wafer bonding step is performed in which a laminate of the second label portion 4a2 formed by the adhesive layer 3 and the second adhesive layer 43, the first label portion 4a1 formed by the first adhesive layer 42 and the substrate film 41 is peeled off and bonded to the semiconductor wafer W. More specifically, the base tape 2 is folded back and conveyed in the peeling direction at the tip end portion of the wedge-shaped peeling member 101, so that peeling of the laminate is promoted, and only the laminate is sent forward. The semiconductor wafer W and the ring frame R are set on the stage 102 at the front lower side, and the stack is sent to the upper side. Further, by providing the pressure roller 103 above the semiconductor wafer W, the adhesive layer 3 is bonded to the semiconductor wafer W. Since the first adhesive layer 42 is larger than the adhesive layer 3, the first adhesive layer 42 is bonded to the ring frame R around the adhesive layer 3.
At this time, the adhesive force of the second adhesive layer 43 is small, but the planar shape of the second adhesive layer 43 is smaller than the planar shape of the adhesive layer 3, and therefore, the first adhesive layer 42 having a large adhesive force is adhered and held to the adhesive layer 3 around the second adhesive layer 43, and therefore, when the base tape 2 is peeled off, or when one end portion of the laminate is pressed against the pressure-bonding roller 103 and the other end portion is pulled in the peeling direction of the base tape 2, the adhesive layer 3 is not lifted from the adhesive tape 4, even when tension is applied to the laminate.
Next, as shown in fig. 4, the ring frame R is fixed to a cutting device, not shown. At this time, the semiconductor wafer W is directed upward, and the semiconductor processing tape 1 is directed downward. Then, as shown in fig. 5, a dicing step of the semiconductor wafer W is performed. Specifically, first, the semiconductor processing tape 1 is suction-supported from the surface side of the base film 41 by the suction stage 105. Then, the semiconductor wafer W and the adhesive layer 3 are cut into semiconductor chip C units by the dicing blade 104, and diced. Then, when the second adhesive layer 43 is a radiation curable adhesive, radiation is irradiated from the lower surface side of the base film 41, and the second adhesive layer 43 is cured, whereby the adhesive force is lowered.
Thereafter, as shown in fig. 6, an expanding step of stretching the adhesive tape 4 holding the diced semiconductor chips C and the adhesive layer 3 in the outer circumferential direction of the ring frame R is performed. Specifically, the pushing-up member 106 having a hollow cylindrical shape is lifted up from the lower surface side of the adhesive tape 4 with respect to the adhesive tape 4 in which the state of the plurality of diced semiconductor chips C and the adhesive layer 3 are held, and the adhesive tape 4 is pulled in the outer circumferential direction of the ring frame R.
After the expansion step, as shown in fig. 7, a pick-up step of picking up the semiconductor chip C with the adhesive tape 4 in an expanded state is performed. Specifically, the semiconductor chip C is pushed up by the pin 107 from the lower surface side of the adhesive tape 4 and is sucked by the suction jig 108, whereby the individual semiconductor chips C are picked up with the adhesive layer 3. At this time, since the adhesive force of the second adhesive layer 43 is small, the semiconductor chip C and the adhesive layer 3 are easily peeled off from the second adhesive layer 43, and the semiconductor chip C can be picked up well.
Then, after the pick-up process, a bonding process is performed. Specifically, the adhesive layer 3 side that is picked up in the pickup process along with the semiconductor chip C is disposed at a bonding position of a substrate such as a lead frame or a package substrate. Thereafter, the adhesive layer 3 is subjected to a heat treatment at a temperature of 150 to 350 ℃ to mechanically bond the semiconductor chip C and the substrate. The bonding step may be performed under non-pressurized conditions, or may be performed under pressure.
Then, a wire bonding step of electrically connecting the tip of the terminal portion of the substrate and the electrode pad on the semiconductor chip C by a bonding wire is performed. Next, a sealing step of sealing the semiconductor chip C with a sealing resin is performed, thereby completing the semiconductor device.
Example (example)
Next, the present invention will be described in more detail with reference to examples. The present invention will be described below with reference to examples, but the present invention is not limited to these examples.
[ substrate film A ]
As a base film, HIMILAN AM-7316 (trade name, manufactured by Sanjing DuPont chemical Co., ltd.) which is an ethylene-methacrylic acid- (2-methyl-propyl acrylate) 3-membered copolymer-Zn++ -ionomer resin was used to prepare a film having a thickness of 90. Mu.m. Corona treatment is carried out on one side of the film to obtain a substrate film.
[ adhesive composition A of first adhesive layer ]
An adhesive composition A of a first adhesive layer was prepared by dissolving 5 parts by mass of a curing agent (trade name "L-45E" manufactured by Zosterol chemical Co., ltd.) in ethyl acetate with stirring, relative to 100 parts by mass of an acrylic adhesive (trade name "SG-50Y" manufactured by Zodiol chemical Co., ltd.).
[ adhesive composition A of second adhesive layer ]
An adhesive composition A for a second adhesive layer was prepared by dissolving 2.3 parts by mass of a curing agent (trade name "L-45E" manufactured by Zymomonas chemical Co., ltd.) and 7 parts by mass of a polyisocyanate composition (trade name "TKA-100" manufactured by Asahi chemical Co., ltd.) in ethyl acetate, respectively, and stirring the solution with respect to 100 parts by mass of an acrylic adhesive (trade name "AP-FE2503" manufactured by Sanyo chemical Co., ltd.).
[ adhesive composition B of second adhesive layer ]
1.7 parts by mass of a curing agent (trade name "L-45E" manufactured by Zymomon chemical Co., ltd.) and 3.9 parts by mass of a polyisocyanate composition (trade name "TKA-100" manufactured by Asahi chemical Co., ltd.) were dissolved in ethyl acetate, and stirred, respectively, to prepare an adhesive composition B for a second adhesive layer.
[ adhesive composition C of second adhesive layer ]
An adhesive composition C for a second adhesive layer was prepared by dissolving 0.34 parts by mass of a curing agent (trade name "L-45E" manufactured by Zymomonas chemical Co., ltd.) and 1.1 parts by mass of a polyisocyanate composition (trade name "TKA-100" manufactured by Asahi chemical Co., ltd.) in ethyl acetate, respectively, and stirring the solution with respect to 100 parts by mass of an acrylic adhesive (trade name "AP-FE2503" manufactured by Sanyo chemical Co., ltd.).
[ adhesive composition D of second adhesive layer ]
An adhesive composition D for a second adhesive layer was prepared by dissolving 2.8 parts by mass of a curing agent (trade name "L-45E" manufactured by Zymomonas chemical Co., ltd.) and 8.4 parts by mass of a polyisocyanate composition (trade name "TKA-100" manufactured by Asahi chemical Co., ltd.) in ethyl acetate, respectively, and stirring the solution with respect to 100 parts by mass of an acrylic adhesive (trade name "AP-FE2503" manufactured by Sanyo chemical Co., ltd.).
[ adhesive composition E of second adhesive layer ]
An adhesive composition E for a second adhesive layer was prepared by dissolving 0.5 parts by mass of a curing agent (trade name "L-45E" manufactured by Zodiac chemical Co., ltd.) in ethyl acetate with stirring, relative to 100 parts by mass of an acrylic adhesive (trade name "AP-FE2503" manufactured by Zodiac chemical Co., ltd.).
[ adhesive composition A ]
To a composition of 50 parts by mass of an epoxy resin (trade name "1002" manufactured by Mitsubishi chemical Co., ltd.), 100 parts by mass of an epoxy resin (trade name "806" manufactured by Mitsubishi chemical Co., ltd.), 5 parts by mass of a curing agent (trade name "Dyhard (registered trademark) 100SF" manufactured by Evonik Degussa Co., ltd.), 150 parts by mass of a silica filler (trade name "SO-C2" manufactured by ADMARINE Co., ltd.), and 5 parts by mass of a silica filler (trade name "AEROSIL R972" manufactured by AEROSIL Co., ltd., japan), MEK was added, and the mixture was stirred to prepare a homogeneous composition.
To this was added 100 parts by mass of a phenoxy resin (manufactured by Gabriel Phenoxies Co., ltd. "PKHH"), 0.4 parts by mass of a coupling agent (manufactured by SILICONE Co., ltd. "KBM-802"), and 0.5 parts by mass of a curing accelerator (manufactured by four-country chemical industry Co., ltd. "Curezol 2 PHZ-PW"), and the mixture was stirred and mixed until it was uniform. The resultant was filtered through a 100-mesh filter and subjected to vacuum defoaming, whereby a varnish of adhesive composition c-1A was obtained.
Example 1 ]
The adhesive composition a of the first adhesive layer was applied to a spacer made of a long polyethylene terephthalate film after the mold release treatment, and the film was dried at 110 ℃ for 3 minutes to a thickness of 5 μm, and then was bonded to a base film a, thereby producing an adhesive sheet a having the first adhesive layer formed on the base film a.
Next, the adhesive composition a of the second adhesive layer was applied to a spacer made of a cut sheet-shaped polyethylene terephthalate film after the release treatment, and the dried film was dried at 110 ℃ for 3 minutes to prepare a plurality of adhesive sheets B each having a second adhesive layer formed on the polyethylene terephthalate film, and the adhesive sheet was bonded to the polyethylene terephthalate film after the release treatment.
The adhesive composition A was applied to a base tape made of a long polyethylene terephthalate film after the mold release treatment, and the film was dried at 110℃for 5 minutes to give an adhesive film having an adhesive layer formed on the polyethylene terephthalate film, with a thickness of 30 μm after drying. Thereafter, the adhesive layer was cut into a round shape having a diameter of 320mm, and a spacer made of a long polyethylene terephthalate film after the mold release treatment was bonded to the surface of the adhesive layer side.
Next, the second adhesive layer of the adhesive sheet B was cut into a circular shape having a diameter of 308 mm. Then, the polyethylene terephthalate film was peeled off from the adhesive sheet a, a plurality of second adhesive layers of the adhesive sheet B were bonded to the exposed first adhesive layer at equal intervals, and a spacer made of a long polyethylene terephthalate film after the mold release treatment was bonded to the second adhesive layer side surface again to obtain an adhesive tape.
Then, the separator made of the polyethylene terephthalate film is peeled off from the adhesive film, and the polyethylene terephthalate film of the adhesive tape is peeled off, and the exposed center of the second adhesive layer and the center of the adhesive layer are laminated so as to overlap each other.
Thereafter, the base film and the first adhesive layer were cut into a circular shape having a diameter of 370mm, and a sample of the semiconductor processing tape of example 1 was produced.
Example 2 ]
A sample of the semiconductor processing tape of example 2 was produced in the same manner as in example 1, except that the adhesive composition B of the second adhesive layer was used instead of the adhesive composition a of the second adhesive layer.
Example 3 ]
A sample of the semiconductor processing tape of example 3 was produced in the same manner as in example 1, except that the adhesive composition C of the second adhesive layer was used instead of the adhesive composition a of the second adhesive layer.
Example 4 ]
A sample of the semiconductor processing tape of example 4 was produced in the same manner as in example 1, except that the adhesive composition D of the second adhesive layer was used instead of the adhesive composition a of the second adhesive layer.
Example 5 ]
A sample of the semiconductor processing tape of example 5 was produced in the same manner as in example 1, except that the adhesive composition E of the second adhesive layer was used instead of the adhesive composition a of the second adhesive layer.
Example 6 ]
A sample of the semiconductor processing tape of example 6 was produced in the same manner as in example 2, except that the second adhesive layer of the adhesive sheet B was cut into a circular shape having a diameter of 290 mm.
Comparative example 1 ]
A sample of the semiconductor processing tape of comparative example 1 was produced in the same manner as in example 1, except that the second adhesive layer of the adhesive sheet B was cut into a circular shape having a diameter of 321 mm.
Comparative example 2 ]
A sample of the semiconductor processing tape of comparative example 2 was produced in the same manner as in example 2, except that the second adhesive layer of the adhesive sheet B was cut into a circular shape having a diameter of 321 mm.
Comparative example 3 ]
A sample of the semiconductor processing tape of comparative example 3 was produced in the same manner as in example 3, except that the second adhesive layer of the adhesive sheet B was cut into a circular shape having a diameter of 321 mm.
Comparative example 4 ]
A sample of the semiconductor processing tape of comparative example 4 was produced in the same manner as in example 4, except that the second adhesive layer of the adhesive sheet B was cut into a circular shape having a diameter of 321 mm.
Comparative example 5 ]
A sample of the semiconductor processing tape of comparative example 5 was produced in the same manner as in example 5, except that the second adhesive layer of the adhesive sheet B was cut into a circular shape having a diameter of 321 mm.
Comparative example 6 ]
The adhesive composition B of the second adhesive layer was applied to a spacer made of a long polyethylene terephthalate film after the mold release treatment, and the spacer was dried to a thickness of 15 μm, and dried at 110 ℃ for 3 minutes, and then was bonded to the base film a to prepare an adhesive sheet C having the second adhesive layer formed on the base film a.
The adhesive composition a was applied to a base tape made of a long polyethylene terephthalate film after the mold release treatment so that the thickness of the base tape after drying became 30 μm, and the base tape was dried at 110 ℃ for 5 minutes, to prepare an adhesive film having an adhesive layer formed on the polyethylene terephthalate film. Thereafter, the adhesive layer was cut into a round shape having a diameter of 320mm, and a spacer made of a long polyethylene terephthalate film after the mold release treatment was bonded to the surface of the adhesive layer side.
Then, the separator made of the polyethylene terephthalate film is peeled off from the adhesive film, and the polyethylene terephthalate film of the adhesive tape is peeled off, and the exposed center of the second adhesive layer and the center of the adhesive layer are laminated so as to overlap each other.
Thereafter, the base film and the second adhesive layer were cut into circles having a diameter of 370mm, and a sample of the semiconductor processing tape of comparative example 6 was produced.
The tapes for semiconductor processing obtained in the above examples and comparative examples were evaluated as follows. The evaluation results are shown in table 1.
SUS surface Release force measurement
From each of the adhesive sheets a used in the adhesive tapes for semiconductor processing of examples 1 to 5 and comparative examples 1 to 5, 3 test pieces 25mm wide by 300mm long were taken, polyethylene terephthalate films were peeled off, these were bonded to SUS304 steel plates 1.5mm to 2.0mm thick as specified in JIS G4305 finished with water-resistant polishing paper No. 280 specified in JIS R6253, and after that, a 2kg rubber roll was pressed and contacted 3 times, and after 1 hour, the adhesive force of the first adhesive layer was measured using a tensile tester suitable for JIS B7721, the measured value of which was in the range of 15 to 85% of the capacity. The measurement was carried out based on a 180℃peeling method, at which the stretching speed was 300mm/min. The measurement temperature was 23℃and the measurement humidity was 50%. The second adhesive layer of each adhesive sheet B was bonded to the first adhesive layer exposed by peeling the polyethylene terephthalate film from the adhesive sheet a, 3 test pieces having a width of 25mm×a length of 300mm were taken, and the polyethylene terephthalate film was peeled from the second adhesive layer, and the adhesive force of the second adhesive layer was measured in the same manner as described above. Further, 3 test pieces 25mm wide by 300mm long were taken from the adhesive sheet C, and the polyethylene terephthalate film was peeled off from the second adhesive layer, and the adhesive force of the second adhesive layer was measured in the same manner as described above.
[ evaluation of peeling of adhesive layer ]
The base tape was peeled off from the semiconductor processing tapes of examples and comparative examples by using a bonding apparatus (trade name: DFM2700, manufactured by Disco Co., ltd.) and silicon wafers having a thickness of 100 μm and a diameter of 300mm were bonded to the exposed adhesive layer. The adhesive tape for semiconductor processing of examples and comparative examples after bonding silicon wafers was checked for the presence or absence of peeling of the adhesive layer. The good quality was evaluated as "o" when the adhesive layer was bonded to the silicon wafer without wrinkles, and the poor quality was evaluated as "x" when the adhesive layer was peeled off from the adhesive tape during bonding to the silicon wafer with wrinkles generated in the adhesive layer.
[ evaluation of pickup Property ]
The tapes for semiconductor processing of the examples and comparative examples bonded to the silicon wafer were prepared by cutting the silicon wafer and the adhesive layer into 15mm×15mm sizes and 0.5mm×0.5mm sizes by using a dicing apparatus (DFD 6340 manufactured by Disco corporation) and subjected to a pick-up test by a chip sorting apparatus (trade name: CAP-300 II).
The pickup conditions are as follows.
Cut into square of 0.5mm
Push-up pin shape: radius 0.45mm, front end radius of curvature r=0.15 mm
Stitch push-up height: 50 μm
Stitch push-up speed: 10mm/sec
Vacuum suction tool (japanese: コ parts) shape: 0.4mm ≡
Expanding the expansion quantity: 10mm of
Ring frame: DISCO Co., ltd. Model DTF-2-6-1 (SUS 420J 2.)
Cut into square 15mm
Push-up pin shape: radius 0.45mm, front end radius of curvature r=0.35 mm
Stitch push-up height: 350 μm
Stitch push-up speed: 10mm/sec
Vacuum suction tool shape: 14mm ≡
Expanding the expansion quantity: 10mm of
Ring frame: DISCO Co., ltd. Model DTF-2-6-1 (SUS 420J 2.)
The singulated chips were picked up 50 by the conditions described above, and the success or failure of pickup was confirmed. The pickers at both 15mm square and 0.5mm square were evaluated as good products "good, 1 or more chips at 15mm square were left on the adhesive layer and could not be picked up, but the pickers at 0.5mm square were evaluated as acceptable products". DELTA. ", and even 1 or more chips at 15mm square and 0.5mm square were left on the adhesive layer and could not be picked up, but the chips which could not be picked up were only chips located at the positions corresponding to the portions where the second adhesive layer was not present in the peripheral edge portion of the silicon wafer, and the chips located other than the peripheral edge portion were evaluated as". DELTA. ", and the pickers at 15mm square and 0.5mm square were evaluated as acceptable products, even 1 chip was left on the adhesive layer and could not be picked up.
[ evaluation of chip fly-away ]
In the pickup performance evaluation test, the presence or absence of chip scattering was visually checked. The good product was evaluated as "o" when no chips were scattered on both the 15mm square and the 0.5mm square, and the good product was evaluated as "x" when 1 or more chips were scattered on the 0.5mm square, but no chips were scattered on the 15mm square, and the good product was evaluated as "Δ" when chips were scattered on both the 15mm square and the 0.5mm square.
[ evaluation of peeling of Ring frame ]
The tape for semiconductor processing of examples and comparative examples after the pick-up evaluation test was checked for the presence or absence of peeling from the ring frame. The number of peeled-off portions from the ring frame was evaluated as "good", the number of peeled-off portions less than 1/4 of the portion bonded to the ring frame was evaluated as "delta", the number of peeled-off portions of the adhesive tape bonded to the ring frame was evaluated as "poor", and the number of peeled-off portions of 1/4 or more of the portion bonded to the ring frame was evaluated as "poor".
TABLE 1
As shown in table 1, in the adhesive tapes for semiconductor processing of examples 1 to 6, the adhesive force of the first adhesive layer was larger than the adhesive force of the second adhesive layer, the planar shape of the adhesive layer was larger than the planar shape of the second adhesive layer, and the planar shape of the first adhesive layer was larger than the planar shape of the adhesive layer, and the first adhesive layer was in contact with the adhesive layer at the peripheral portion of the second adhesive layer, so that good results were obtained in both the ring frame peeling evaluation and the adhesive layer peeling evaluation. In addition, with respect to the tapes for semiconductor processing of examples 1 to 3, the adhesion between the second adhesive layer and the SUS304 surface was 0.1 to 0.6N/25mm and the adhesion between the first adhesive layer and the SUS304 surface was 1 to 10N/25mm at a peeling angle of 180 degrees and a peeling speed of 300mm/min under the conditions of 23℃and 50% RH, and therefore, good results were obtained also in the pick-up property evaluation and the chip scattering evaluation. Regarding the adhesive tape for semiconductor processing of example 4, since the adhesive force of the second adhesive layer to the SUS304 surface was less than 0.1N/25mm, chip scattering occurred in the case of a 0.5mm square chip, but was within the allowable range. Regarding the adhesive tape for semiconductor processing of example 5, since the adhesive force of the second adhesive layer to the SUS304 surface exceeds 0.6N/25mm, pick-up failure occurs in the case of a 15mm square chip, but is within an allowable range. In the semiconductor processing tape of example 6, the diameter of the second adhesive layer was equal to or smaller than the diameter of the silicon wafer, and all chips located outside the peripheral edge portion of the silicon wafer were picked up, but pick-up failure occurred for chips located in the peripheral edge portion at the portion corresponding to the portion where the second adhesive layer was not present.
Regarding the tapes for semiconductor processing of comparative examples 1 to 5, the planar shape of the second adhesive layer was larger than the planar shape of the adhesive layer, and therefore, poor results were obtained in the evaluation of peeling of the adhesive layer. Further, since the first adhesive layer having an adhesive force larger than that of the second adhesive layer was not provided in the adhesive tape for semiconductor processing of comparative example 6, the results were poor in both the ring frame peeling evaluation and the adhesive layer peeling evaluation.
Description of the reference numerals
1: adhesive tape for semiconductor processing
2: base material adhesive tape
3: adhesive layer
4: adhesive tape
41: substrate film
42: first adhesive layer
43: second adhesive layer
15: support member
W: semiconductor wafer
R: ring frame
C: semiconductor chip

Claims (4)

1. A semiconductor processing adhesive tape is characterized in that,
sequentially provided with a base film, a first adhesive layer and a second adhesive layer,
an adhesive layer is provided on a surface of the second adhesive layer opposite to the substrate film and the first adhesive layer,
the adhesive force of the first adhesive layer is greater than the adhesive force of the second adhesive layer,
the first adhesive layer, the second adhesive layer and the adhesive layer each have a planar shape,
The planar shape of the adhesive layer is larger than the planar shape of the second adhesive layer, the planar shape of the first adhesive layer is larger than the planar shape of the adhesive layer,
the first adhesive layer is in contact with the adhesive layer at a peripheral portion of the second adhesive layer,
the adhesive force between the second adhesive layer and SUS304 surface is 0.1N/25 mm-0.6N/25 mm at a peeling angle of 180 degrees and peeling speed of 300mm/min under the conditions of 23 ℃ and 50% RH,
the adhesive force between the first adhesive layer and SUS304 surface is 1N/25 mm-10N/25 mm at a peeling angle of 180 degrees and peeling speed of 300mm/min under the conditions of 23 ℃ and 50% RH,
when the first adhesive layer is a radiation-uncured resin which is not cured by irradiation with radiation, a resin which contains a constituent unit derived from an alkyl (meth) acrylate monomer and a constituent unit derived from 2-hydroxypropyl acrylate, 2-hydroxyethyl (meth) acrylate and/or 2-hydroxybutyl acrylate, and a copolymer containing a constituent unit derived from the alkyl (meth) acrylate monomer is crosslinked with an isocyanate compound, or
When the first adhesive layer is a radiation curable adhesive composition cured by irradiation with radiation, the radiation curable adhesive composition is a composition comprising, as a base resin, a polymer A containing 60 mol% or more of constituent units derived from a (meth) acrylate having an alkyl chain having 6 to 12 carbon atoms and having an energy ray curable carbon-carbon double bond having an iodine value of 5 to 30,
when the second adhesive layer is a radiation-non-curable resin which is not cured by irradiation with radiation, a resin which contains a constituent unit derived from an alkyl (meth) acrylate monomer and a constituent unit derived from 2-hydroxypropyl acrylate, 2-hydroxyethyl (meth) acrylate and/or 2-hydroxybutyl acrylate, and a copolymer containing a constituent unit derived from the alkyl (meth) acrylate monomer is crosslinked with an isocyanate compound, or
When the second adhesive layer is a radiation curable adhesive composition cured by irradiation with radiation, the radiation curable adhesive composition is a composition comprising, as a base resin, a polymer a containing 60 mol% or more of constituent units derived from a (meth) acrylate having an alkyl chain having 6 to 12 carbon atoms and having an energy ray curable carbon-carbon double bond having an iodine value of 5 to 30.
2. The semiconductor processing tape according to claim 1, wherein,
the first adhesive layer is a radiation-non-curable layer that does not cure by irradiation with radiation.
3. The semiconductor processing tape according to claim 1 or 2, wherein,
the second adhesive layer is a radiation-non-curable layer that does not cure by irradiation with radiation.
4. The semiconductor processing tape according to claim 1 or 2, wherein,
the second adhesive layer has a planar shape larger than that of the semiconductor wafer bonded to the adhesive layer.
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