CN102250555A - Belt for wafer processing - Google Patents
Belt for wafer processing Download PDFInfo
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- CN102250555A CN102250555A CN2010101794607A CN201010179460A CN102250555A CN 102250555 A CN102250555 A CN 102250555A CN 2010101794607 A CN2010101794607 A CN 2010101794607A CN 201010179460 A CN201010179460 A CN 201010179460A CN 102250555 A CN102250555 A CN 102250555A
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Abstract
The invention provides a belt for wafer processing, and the belt can facilitate stripping between an adhesive layer and a binder layer, improve the picking-up success rate of semiconductor chips in a picking-up process, and simultaneously prevent the thin semiconductor chips from being damaged caused by increasing jacking force and jacking height of pins. The belt (10) for wafer processing comprises an adhesive film (12) composed of a base material film (12a) and the adhesive layer (12b) as well as the binder layer (13) laminated on the adhesive film (12), wherein the adhesive tension of the adhesive layer (12b) at 80 DEG C is less than 0.9 (N); and the adhesive tension ratio (A/B) of the adhesive tension (A) of the binder layer (13) at 80 DEG C to the adhesive tension of the adhesive layer (12b) at 80 DEG C is more than 6.0 and less than 7.0.
Description
Technical field
The present invention relates to a kind of cutting action that is used for semiconductor wafer, pick up the tape for processing wafer of operation, chip join (diebonding) operation.
Background technology
In the manufacturing process of semiconductor device, it is the unitary operation of semi-conductor chip that enforcement is cut off separation (cutting) with semiconductor wafer, pick up the operation of isolating semi-conductor chip, further the die bonding that picks up (is installed mount) operation in the chip join of lead frame and base plate for packaging etc.
In recent years, as the tape for processing wafer that in the manufacturing process of above-mentioned semiconductor device, uses, for example, proposed tape for processing wafer that base material film is provided with binder layer, have the tape for processing wafer that on binder layer, further is laminated with the structure of bond layer (the chip join film: DDF), and practicability (for example with reference to patent documentation 1).
But, because above-mentioned chip join film must prolong from being fabricated onto the bond layer between the use and the time that contacts of binder layer, therefore, two-layerly before use merge, in the operation of the semi-conductor chip of the band bond layer that picks up singualtion, exist in the problem that to peel off smoothly between bond layer and the binder layer.
Therefore, as the tape for processing wafer that solves such problem, known have a kind of tape for processing wafer, its by to the iodine value of the ray polymerization compound that constitutes binder layer with carbon-to-carbon double bond bonding, and the second-order transition temperature that contains the epoxy group(ing) acrylic copolymer (Tg) that constitutes bond layer stipulate that semi-conductor chip that can the band bond layer easily be peeled off (for example with reference to patent documentation 2) from binder layer.
Patent documentation 1: Japanese kokai publication hei 2-32181 communique
Patent documentation 2: TOHKEMY 2005-303275 communique
In the tape for processing wafer of in above-mentioned patent documentation 2, putting down in writing, constitute the iodine value of the ray polymerization compound with carbon-to-carbon double bond bonding of binder layer by regulation, the reduction of the adhesive power behind the realization radiation exposure, contain the second-order transition temperature (Tg) of epoxy group(ing) acrylic copolymer by regulation, realize the reduction of the adhesive power of bond layer under the B stage condition or tape for processing wafer.That is,, improve according to the mode of peeling off easily respectively binder layer and bond layer.
But, relation between binder layer and the bond layer is not done consideration, and there are the following problems: by combination, it is insufficient to peel off easiness, the semi-conductor chip (below, be called semi-conductor chip) of the band bond layer binder layer from tape for processing wafer suitably can not be picked up.
In addition, when picking up, in order to make peeling off easily between binder layer and the bond layer, the jack-up power and the jack-up of the semi-conductor chip that will carry out from the downside utilization pin (pin) of tape for processing wafer are highly increased, still, and in recent years, the trend that has the semi-conductor chip attenuation, under the situation of semi-conductor chip attenuation, when increasing jack-up power, also there is the damaged such problem of chip.
Summary of the invention
Therefore, the present invention carries out in order to solve the above problems, its purpose is to provide a kind of tape for processing wafer, by making peeling off easily between binder layer and the bond layer, improve the success ratio of picking up of the semi-conductor chip pick up in the operation, simultaneously, can prevent the breakage of the thin semi-conductor chip that highly causes by jack-up power that increases pin and jack-up.
Present inventors etc. study with keen determination to above-mentioned problem, found that, be formed with base material film successively, in the tape for processing wafer of binder layer and bond layer, the adhesive power of the bond layer with 80 ℃ the time is made as A, when the adhesive power of the binder layer during with 80 ℃ is made as B, be made as B≤0.9 (N) by use, and 6.0≤(A/B)≤7.0 tape for processing wafer, it is easy that peeling off between binder layer and the bond layer becomes, the success ratio of picking up of picking up the semi-conductor chip in the operation improves, and then find, the thin semi-conductor chip that intensity is low can not have damagedly yet and picks up, thereby has finished the present invention.
Promptly, first aspect present invention provides a kind of tape for processing wafer, it is to be formed with base material film, binder layer and bond layer successively, it is characterized in that, the adhesive power of the described bond layer with 80 ℃ the time is made as A, when the adhesive power of the described binder layer during with 80 ℃ is made as B, B≤0.9 (N), and 6.0≤(A/B)≤7.0.
The tape for processing wafer of the application of the invention, peeling off between binder layer and the bond layer become easily, in picking up operation, can easily the binder layer of semi-conductor chip from tape for processing wafer be picked up.Therefore, and compare at present, can improve the success ratio of picking up of semi-conductor chip.In addition and since also can be under the situation of jack-up power that does not increase pin and jack-up height under the situation of thin semi-conductor chip picking up semiconductor chip, therefore, can not make the low semi-conductor chip of intensity damaged and pick up.
Description of drawings
Fig. 1 is the sectional view of the tape for processing wafer of expression embodiment of the present invention;
Fig. 2 is the figure that is fitted with semiconductor wafer on tape for processing wafer;
Fig. 3 is the figure that is used to illustrate cutting action;
Fig. 4 is the figure that is used to illustrate the expansion operation;
Fig. 5 is used to illustrate the figure that picks up operation;
Nomenclature
1: semiconductor wafer
2: semi-conductor chip
10: tape for processing wafer
12a: base material film
12b: binder layer
12: bonding film
13: bond layer
Embodiment
Below, with reference to the accompanying drawings embodiments of the present invention are elaborated.
Fig. 1 is the sectional view of the tape for processing wafer 10 of expression one embodiment.This tape for processing wafer 10 has: the bonding film 12 that is made of the base material film 12a and the binder layer 12b formed thereon of film like, be laminated in the bond layer 13 on this bonding film 12.Like this, on tape for processing wafer 10, be formed with base material film 12a, binder layer 12b, bond layer 13 in order.
In addition, binder layer 12b can be made of the layer of adhesive layer, also can be made of the binder layer that is laminated with two-layer above binder layer.In addition, in Fig. 1,, shown that tape for processing wafer 10 is provided with the state of release liner 11 in order to protect bond layer 13.
Bonding film 12 and bond layer 13 can be according to using operation or device to cut into regulation shape (precut) in advance.Tape for processing wafer 10 of the present invention comprises by the form of each sheet cutting of semiconductor wafer and the rectangular sheet material that will be formed with the form of a plurality of such each sheets cutting by semiconductor wafer and is wound on form on the roller.
Below, each integrant of the tape for processing wafer 10 of present embodiment is elaborated.
(bond layer)
For bond layer 13, after bonding semiconductor wafer 1 grade and cutting, when picking up semiconductor chip 2, peel off from bonding film 12, on semi-conductor chip 2, be used as the caking agent when being fixed on semi-conductor chip 2 on substrate or the lead frame.Therefore, for bond layer 13, in picking up operation, has the separability that under the state on the semi-conductor chip 2 that remains adhered to singualtion, to peel off from bonding film 12, and, in the chip join operation,, has sufficient bonding reliability for semi-conductor chip 2 is adhesively fixed in substrate or lead frame.
The thickness of bond layer 13 is not particularly limited, and is preferably usually about 5～100 μ m.In addition, bond layer 13 can be layered on whole of binder layer 12b of bonding film 12, also the bond layer that cuts in advance corresponding to the shape (precut) of the semiconductor wafer 1 of fitting can be layered on the part of binder layer 12b.When being laminated with the bond layer 13 that cuts into corresponding to the shape of semiconductor wafer 1, as shown in Figure 2, have bond layer 13 in the part that is fitted with semiconductor wafer 1, do not have bond layer 13 in the part that is fitted with incisory toroidal frame 20 and only have the binder layer 12b of bonding film 12.Generally speaking, bond layer 13 is difficult to peel off from clung body, therefore, by use precut bond layer 13, can obtain following effect: toroidal frame 20 is fitted on the bonding film 12, and the sheet material after use is difficult for producing residual slurry when peeling off on toroidal frame.
(bonding film)
For bonding film 12, when cutting semiconductor chip 1, have and do not make semiconductor wafer 1 peel off so sufficient adhesive power, after cutting, when picking up semiconductor chip 2, have and can easily peel off so low bounding force from bond layer 13.In the present embodiment, as shown in Figure 1, bonding film 12 uses the bonding film that is provided with binder layer 12b on base material film 12a.
For example, as the material of base material film 12a, can enumerate: homopolymer or the multipolymer or their mixture of alpha-olefins such as polyethylene, polypropylene, ethylene-propylene copolymer, polybutene-1, poly--4-methylpentene-1, ethylene-vinyl acetate copolymer, ethylene-ethyl acrylate copolymer, ethylene-methyl acrylate copolymer, ethylene-acrylic acid copolymer, ionomer; Urethane, styrene-ethylene-butylene copolymer or thermoplastic elastomer and their mixtures such as amylene analog copolymer, polymeric amide-polyol copolymer.In addition, the base material film that base material film 12a can form for the material mixing more than 2 kinds that will be selected from these also can be for carrying out the base material film that single or multiple liftization gets with them.The thickness of base material film 12a is not particularly limited, and can suitably set, preferred 50～200 μ m.
In the present embodiment, by to bonding film 12 irradiation ultraviolet radiation isoradials, binder layer 12b is solidified, release adhesive layer 12b from the bond layer 13 easily, therefore, for resin at binder layer 12b, employed known chlorinated polypropylene in the preferred adhesive, acrylic resin, vibrin, urethane resin, Resins, epoxy, the addition reaction-type organopolysiloxane is a resin, the Si acrylate resin, ethylene-vinyl acetate copolymer, ethylene-ethyl acrylate copolymer, ethylene-methyl acrylate copolymer, ethylene-acrylic acid copolymer, various elastomericss such as polyisoprene or styrene-butadiene copolymer or its hydrogenation thing etc., or in its mixture, suitably cooperate the radioactive rays polymerizable compound and prepare tackiness agent.In addition, can also add various tensio-active agents or surface smoothing agent.The thickness of binder layer 12b is not particularly limited, and can suitably set, and is preferably 5～30 μ m.
This radioactive rays polymerizable compound for example can use can three-dimensional nettedization by rayed intramolecularly have polymkeric substance or the oligopolymer that has optical polymerism carbon-to-carbon double bond group at least in the low-molecular weight compound, substituting group of 2 above optical polymerism carbon-to-carbon double bonds.Particularly, can use Viscoat 295, pentaerythritol triacrylate, tetramethylol methane tetraacrylate, Dipentaerythritol monohydroxy five acrylate, dipentaerythritol acrylate, 1, the multipolymer of 4-butylene glycol diacrylate, 1,6 hexanediol diacrylate, polyethyleneglycol diacrylate, oligomer ester acrylate etc., Si acrylate etc., vinylformic acid or various esters of acrylic acids etc.
In addition, except that aforesaid acrylic ester compound, can also use ammonia ester acrylate quasi-oligomer.Ammonia ester acrylate quasi-oligomer is to make acrylate with hydroxyl or methacrylic ester (vinylformic acid 2-hydroxyl ethyl ester for example, methacrylic acid 2-hydroxyl ethyl ester, vinylformic acid 2-hydroxypropyl acrylate, methacrylic acid 2-hydroxypropyl acrylate, polyethylene glycol acrylate, polyethylene glycol methacrylate-styrene polymer etc.) obtain with the reaction of terminal isocyanate urethane prepolymer, described terminal isocyanate urethane prepolymer is to make polyol compounds such as polyester type or polyether-type and multicomponent isocyanate compound (for example 2, the 4-tolylene diisocyanate, 2, the 6-tolylene diisocyanate, 1,3-xylylene vulcabond, 1,4-xylylene vulcabond, ditan 4,4-vulcabond etc.) reaction obtains.Need to prove, also can mix the resin more than 2 kinds that is selected from the above-mentioned resin among the binder layer 12b.
Need to prove, in the resin of binder layer 12b, except that bonding film 12 irradiation radioactive rays are made the binder layer 12b solidified radioactive rays polymerizable compound, also can suitably cooperate acrylic adhesives, Photoepolymerizationinitiater initiater, solidifying agent etc. and preparation binder layer 12b.
When using Photoepolymerizationinitiater initiater, can use for example benzoin iso-propylether, bitter almond oil camphor ethyl isobutyl ether, benzophenone, tetramethyldiaminobenzophenone, clopenthixal ketone, dodecyl thioxanthone, dimethyl thioxanthone, diethyl thioxanthone, benzyl dimethyl ketal, Alpha-hydroxy cyclohexyl-phenyl ketone, 2-hydroxymethyl phenyl-propane etc.
The tape for processing wafer 10 of present embodiment has feature aspect the following formation having.
The adhesive power of the bond layer 13 with 80 ℃ the time is made as A, when the adhesive power of the binder layer 12b during with 80 ℃ is made as B, satisfy B≤0.9 (N), and 6.0≤(A/B)≤7.0.
Adhesive power when reducing binder layer 12b and bond layer 13 80 ℃ can be used more than 50 ℃ and the lower boiling solvent of 100 ℃ of following degree.More than 50 ℃ and the solvent below 100 ℃, preferred vinyl acetic monomer and methyl ethyl ketone (MEK) can use with the form of monomer or mixture as boiling point.Using more than 100 ℃ and under the situation of the solvent of the high boiling point of 200 following degree, residual molten concentration can be set at below 1%.And then the adhesive power when reducing 80 ℃ of binder layer 12b can make the amount of light trigger increase, and with respect to polymkeric substance 100 mass parts, is preferably set to 1～20 mass parts, more preferably is set at 2～15 mass parts.
The gamma transition transition temperature (Tg) of the polymkeric substance of the binder layer of raising formation in addition, is also effective.Second-order transition temperature (Tg) is preferably-40～-70 ℃, more preferably-50～-60 ℃.And then, adhesive power when reducing 80 ℃ of binder layer 12b, can increase the content of solidifying agent, be preferably 0.01～0.15 mass parts, more preferably make the content of solidifying agent be set at 0.01～0.02 mass parts with respect to polymers copolymers with respect to polymers copolymers.
In addition, the adhesive power when reducing 80 ℃ of bond layer 13 can improve filler content, is 5～100 mass parts with respect to polymkeric substance 100 mass parts preferably, more preferably 10～50 mass parts.And then the adhesive power when reducing 80 ℃ of bond layer 13 can make the content of solidifying agent increase, and with respect to epoxy 100 mass parts, solidifying agent can be 50～200 mass parts, more preferably 70～150 mass parts.In addition, the epoxy equivalent (weight) that constitutes the epoxy of bond layer is preferably 100g/eq～400g/eq, more preferably 200～300g/eq.Adhesive power when improving binder layer 12b and bond layer 13 80 ℃ can be reversed above-mentioned operation.
(using method of tape for processing wafer)
In the manufacturing process of semiconductor device, tape for processing wafer 10 following uses.In Fig. 2, be illustrated in the situation that is fitted with semiconductor wafer 1 and toroidal frame 20 on the tape for processing wafer 10.At first, as shown in Figure 2, the binder layer 12b of bonding film 12 is sticked on the toroidal frame 20, semiconductor wafer 1 and bond layer 13 are fitted.Its stickup order without limits can be after fitting semiconductor wafer 1 and bond layer 13, and the binder layer 12b with bonding film 12 sticks on the toroidal frame 20 again.In addition, also can carry out bonding film 12 applying on bond layer 13 simultaneously to stickup on the toroidal frame 20 and semiconductor wafer 1.
Next, implement the cutting action (Fig. 3) of semiconductor wafer 1, then, implement bonding film 12 irradiation energy rays, ultraviolet operation for example.Particularly, in order to utilize cutters 21 cutting semiconductor chips 1 and bond layer 13, utilize the attached supporting wafers processing of absorptive table 22 side draught below bonding film 12 with being with 10.Then, utilize cutters 21 that semiconductor wafer 1 and bond layer 13 are cut into 2 elemental semiconductor chips and carry out singualtion, then, from the lower face side irradiation energy ray of bonding film 12.By this energy-ray irradiation, binder layer 12b is solidified, its adhesive power is reduced.Need to prove, can replace the irradiation of energy-ray, utilize outside stimulus such as heating and make the adhesive power reduction of the binder layer 12b of bonding film 12.Binder layer 12b is stacked by two-layer above binder layer and under the situation about constituting, and can make one deck or all layers curing in each binder layer by energy exposure, and one deck in each binder layer or the adhesive power of all layers are reduced.
Thereafter, as shown in Figure 4, enforcement will maintain the circumferential direction tensile expansion operation of the bonding film 12 of the semi-conductor chip 2 that is cut and bond layer 13 along toroidal frame 20.Particularly, maintain the bonding film 12 of the state of a plurality of semi-conductor chips 2 that cut into and bond layer 13 relatively, the ejector member 30 that makes hollow cylindrical rises from the lower face side of bonding film 12, and the circumferential direction of bonding film 12 along toroidal frame 20 stretched.By the expansion operation, widen the interval between the semi-conductor chip 2, improve the identity utilize the semi-conductor chip 2 that ccd video camera etc. carries out, simultaneously, can prevent when picking up bonding again between the semi-conductor chip that semi-conductor chip 2 contact each other owing to adjacency produces.
After implementing the expansion operation, as shown in Figure 5, under the state that has kept bonding film 12 expanded, implement the operation of picking up of picking up semiconductor chip 2.Particularly, semi-conductor chip 2 is ejected, simultaneously, with suction jig 32 absorption semi-conductor chips 2, thus, the semi-conductor chip 2 and the bond layer 13 of singualtion together picked up from the upper surface side of bonding film 12 from the lower face side utilization pin 31 of adhesive sheet 12.
Next, after implementing to pick up operation, implement the chip join operation.Particularly, utilize the bond layer 13 that in picking up operation, together picks up with semi-conductor chip 2, semi-conductor chip 2 is bonding with lead frame or packing substrate etc.
(embodiment)
Then, embodiments of the invention are described, but the present invention is not limited to these embodiment.At first, after binder layer composition 1A～1G shown in base material film 12a and the following table 1 modulated, applying adhesive layer composition 1A～1F on base material film 12a was so that the dried thickness of binder layer composition 1A～1G is 10 μ m, drying is 3 minutes under 110 ℃, makes bonding film 12.Then, bond layer composition 2A～2H shown in the following table 2 is modulated, adhesive-applying layer composition 2A～2H on 11 at the bottom of bond layer composition 2A～2H being carried out the peeling liner that the polyethylene terephthalate by thickness 25 μ m that the demoulding handles constitutes, so that dried thickness is 40 μ m, drying is 3 minutes under 110 ℃, makes bond layer 13 on release liner 11.Then, after being as shown in Figure 2 shape with bonding film 12 and bond layer 13 severings,, make embodiment 1～3 shown in following table 3 and the comparative example 1～9 shown in following table 4 at the binder layer 12b of bonding film 12 side applying bond layer 13.
(base material film 12a)
As membranaceous base material film 12a, use the elastomeric polypropylene that has added thickness 100 μ m.
(modulation of binder layer composition)
As binder layer composition 1A～1G, by the cooperation of each composition as shown in table 1 below, the modulating adhesive layer composition.
[table 1]
| The binder layer composition | 1A | 1B | 1C | 1D | 1E | 1F | 1G |
| Polymers copolymers (1) | 33 | 33 | 33 | 33 | 33 | ||
| Polymers copolymers (2) | 33 | 33 | |||||
| Solidifying agent | 0.5 | 0.5 | 0.5 | 0.5 | 0.5 | 0.2 | 0.5 |
| Light trigger | 3 | 3 | 3 | 1 | 4 | 3 | 3 |
| Solvent (1) | 80 | 80 | |||||
| Solvent (2) | 80 | 80 | 80 | 80 | 80 |
＜binder layer composition 1A 〉
Binder composition 1A is as shown in table 1, for adding polymers copolymers (1) 33 mass parts, solidifying agent (isocyanic ester) 0.5 mass parts, Photoepolymerizationinitiater initiater (1-hydroxyl-cyclohexyl-phenyl-ketone) 3 mass parts, solvent (1) 80 mass parts and carrying out the blended composition.Need to prove that polymers copolymers (1) is functional group's the 2-EHA with radiation-curable carbon-to-carbon double bond bonding and the multipolymer of vinylformic acid 2-hydroxyalkyl acrylate class, second-order transition temperature (Tg) is-53 ℃.In addition, solvent (1) is a toluene.
＜binder layer composition 1B 〉
Binder composition 1B is as shown in table 1, is the composition that adds polymers copolymers (1) 33 mass parts, solidifying agent (isocyanate compound) 0.5 mass parts, Photoepolymerizationinitiater initiater (1-hydroxyl-cyclohexyl-phenyl-ketone) 3 mass parts, solvent (2) 80 mass parts and mix.Need to prove that solvent (2) is a vinyl acetic monomer.
＜binder layer composition 1C 〉
Binder composition 1C is as shown in table 1, is the composition that adds polymers copolymers (2) 33 mass parts, solidifying agent (isocyanate compound) 0.5 mass parts, Photoepolymerizationinitiater initiater (1-hydroxyl-cyclohexyl-phenyl-ketone) 3 mass parts, solvent (2) 80 mass parts and mix.Need to prove that polymers copolymers (2) is functional group's the 2-EHA with radiation-curable carbon-to-carbon double bond bonding and the multipolymer of vinylformic acid 2-hydroxyalkyl acrylate class, second-order transition temperature (Tg) is-72 ℃.
＜binder layer composition 1D 〉
Binder composition 1D is as shown in table 1, is the composition that adds polymers copolymers (1) 33 mass parts, solidifying agent (isocyanate compound) 0.5 mass parts, Photoepolymerizationinitiater initiater (1-hydroxyl-cyclohexyl-phenyl-ketone) 1 mass parts, solvent (2) 80 mass parts and mix.
＜binder layer composition 1E 〉
Binder composition 1E is as shown in table 1, is the composition that adds polymers copolymers (1) 33 mass parts, solidifying agent (isocyanate compound) 0.5 mass parts, Photoepolymerizationinitiater initiater (1-hydroxyl-cyclohexyl-phenyl-ketone) 4 mass parts, solvent (2) 80 mass parts and mix.
＜binder layer composition 1F 〉
Binder composition 1F is as shown in table 1, is the composition that adds polymers copolymers (1) 33 mass parts, solidifying agent (isocyanate compound) 0.2 mass parts, Photoepolymerizationinitiater initiater (1-hydroxyl-cyclohexyl-phenyl-ketone) 3 mass parts, solvent (2) 80 mass parts and mix.
＜binder layer composition 1G 〉
1G is as shown in table 1 for the binder layer composition, is the composition that adds polymers copolymers (2) 33 mass parts, solidifying agent (isocyanic ester) 0.5 mass parts, Photoepolymerizationinitiater initiater (1-hydroxyl-cyclohexyl-phenyl-ketone) 3 mass parts, solvent (1) 80 mass parts and mix.
Is that 10 μ ms apply according to dry film thickness with above-mentioned binder layer composition 1A～1G on base material film 12a, 110 ℃ dry 3 minutes down, make bonding film 12.
As binder layer composition 2A～2H, by the cooperation of each composition shown in the following table 2, modulation bond layer composition.
[table 2]
| The bond layer composition | 2A | 2B | 2C | 2D | 2E | 2F | 2G | 2H |
| Acrylic resin (1) | 16 | 16 | 16 | 19 | 16 | |||
| Acrylic resin (2) | 16 | 16 | 19 | |||||
| Resins, epoxy | 4 | 4 | 4 | 4 | 1 | 4 | 4 | 1 |
| |
2 | 2 | 2 | 1 | 2 | 3 | 2 | 2 |
| Solidifying agent | 4 | 4 | 4 | 4 | 4 | 4 | 4 | 4 |
| Solidifying agent promotor | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 |
| Solvent (1) | 80 | 80 | 80 | |||||
| Solvent (2) | 80 | 80 | 80 | 80 | 80 |
＜bond layer composition 2A 〉
Resins, epoxy 4 mass parts, silane coupling agent (γ-Qiu Jibingjisanjiayangjiguiwan), filler 2 mass parts are added solvent (2) 80 mass parts and mix, and then used ball mill mixing 90 minutes., acrylic resin (1) 16 mass parts, solidifying agent 4 mass parts, curing catalyst 0.2 mass parts mixed, and carry out vacuum outgas, obtain bond layer composition 2A thereafter.Resins, epoxy is biphenyl type epoxy resin (63 ℃ of epoxy equivalent (weight)s 265, molecular weight 1200, softening temperature).Filler is the silica filler of median size 16nm.Need to prove that solvent (2) is the mixture of methyl ethyl ketone (MEK) and vinyl acetic monomer.The weight-average molecular weight (Mw) of acrylic resin (1) is 800,000, and second-order transition temperature (Tg) is 17 ℃.As solidifying agent, use commercially available DICY15 (JER (strain)), as curing catalyst, use commercially available Curesol 2PZ (four countries change into Co., Ltd.).
＜bond layer composition 2B 〉
2B is as shown in table 2 for the bond layer composition, use acrylic resin (1) 16 mass parts, Resins, epoxy 4 mass parts, filler 2 mass parts, solidifying agent 4 mass parts, curing catalyst 0.2 mass parts, solvent (1) 80 mass parts, 2A similarly obtains with the bond layer composition.Solvent (1) is the mixture of toluene and pimelinketone.
＜bond layer composition 2C 〉
2C is as shown in table 2 for the bond layer composition, use acrylic resin (1) 16 mass parts, Resins, epoxy 4 mass parts, filler 2 mass parts, solidifying agent 4 mass parts, curing catalyst 0.2 mass parts, solvent (2) 80 mass parts, 2A similarly obtains with the bond layer composition.The weight-average molecular weight (Mw) of acrylic resin (2) is 850,000, and second-order transition temperature (Tg) is-15 ℃.
＜bond layer composition 2D 〉
2D is as shown in table 2 for the bond layer composition, use acrylic resin (1) 16 mass parts, Resins, epoxy 4 mass parts, filler 1 mass parts, solidifying agent 4 mass parts, curing catalyst 0.2 mass parts, solvent (2) 80 mass parts, 2A similarly obtains with the bond layer composition.
＜bond layer composition 2E 〉
2E is as shown in table 2 for the bond layer composition, use acrylic resin (1) 19 mass parts, Resins, epoxy 1 mass parts, filler 2 mass parts, solidifying agent 4 mass parts, curing catalyst 0.2 mass parts, solvent (2) 80 mass parts, 2A similarly obtains with the bond layer composition.
＜bond layer composition 2F 〉
2F is as shown in table 2 for the bond layer composition, use acrylic resin (1) 16 mass parts, Resins, epoxy 4 mass parts, filler 3 mass parts, solidifying agent 4 mass parts, curing catalyst 0.2 mass parts, solvent (2) 80 mass parts, 2A similarly obtains with the bond layer composition.
＜bond layer composition 2G 〉
2G is as shown in table 2 for the bond layer composition, use acrylic resin (2) 16 mass parts, Resins, epoxy 4 mass parts, filler 2 mass parts, solidifying agent 4 mass parts, curing catalyst 0.2 mass parts, solvent (1) 80 mass parts, 2A similarly obtains with the bond layer composition.
＜bond layer composition 2H 〉
2H is as shown in table 2 for the bond layer composition, use acrylic resin (2) 19 mass parts, Resins, epoxy 1 mass parts, filler 2 mass parts, solidifying agent 4 mass parts, curing catalyst 0.2 mass parts, solvent (1) 80 mass parts, 2A similarly obtains with the bond layer composition.
Above-mentioned bond layer composition 2A～2H is coated on thickness 25 μ m carrying out on polyethylene terephthalate (PET) film handled of the demoulding, heat drying forms thickness and is the filming of B stage condition of 40 μ m, and makes bonding film.
The circle that the bonding film 12 made and bonding film are cut into diameter 370mm, 320mm respectively, and the binder layer 12b of bonding film 12 and the bond layer 13 of bonding film fitted.At last, the PET film of bonding film is peeled off from bond layer 13, obtained embodiment 1～3 tape for processing wafer 10 shown in the table 3, and the tape for processing wafer of the comparative example 1～9 shown in the following table 4.
[table 3]
| Embodiment 1 | |
Embodiment 3 | |
| The binder layer composition | 1B | 1E | 1F |
| The bond layer composition | 2A | 2A | 2F |
| Adhesive power A (N) during 80 ℃ of bond layer | 3.651 | 3.651 | 3.584 |
| Adhesive power B (N) during 80 ℃ of binder layer | 0.531 | 0.566 | 0.584 |
| Adhesive power in the time of 80 ℃ is than (A/B) | 6.9 | 6.5 | 6.1 |
| Pick up success ratio (%) | 100 | 100 | 100 |
[table 4]
| Comparative example 1 | Comparative example 2 | Comparative example 3 | Comparative example 4 | Comparative example 5 | Comparative example 6 | Comparative example 7 | Comparative example 8 | Comparative example 9 | |
| The binder layer composition | 1A | 1B | 1C | 1B | 1B | 1B | 1D | 1G | 1G |
| The bond layer composition | 2A | 2B | 2A | 2C | 2D | 2E | 2A | 2G | 2H |
| Adhesive power A (N) during 80 ℃ of bond layer | 3.651 | 3.967 | 3.651 | 3.896 | 3.772 | 4.093 | 3.651 | 5.624 | 6.295 |
| Adhesive power B (N) during 80 ℃ of binder layer | 0.864 | 0.531 | 0.618 | 0.531 | 0.531 | 0.531 | 0.851 | 0.908 | 0.908 |
| Adhesive power in the time of 80 ℃ is than (A/B) | 4.2 | 7.5 | 5.9 | 7.3 | 7.1 | 7.7 | 4.3 | 6.2 | 6.9 |
| Pick up success ratio (%) | 32 | 28 | 81 | 22 | 76 | 9 | 28 | 0 | 0 |
The binder layer composition of the tape for processing wafer 10 of table 3 expression formation embodiment 1～3 and the combination of bond layer composition.The adhesive power of adhesive power B (N) during 80 ℃ of adhesive power A (N), the binder layer 12b when in addition, showing 80 ℃ of bond layer 13 of each embodiment 1～3, the bond layer 13 80 ℃ time the and binder layer 12b than (A/B), pick up success ratio (%).The jack-up of the pin that picks up in addition, highly is 450 μ m.
The binder layer composition of the tape for processing wafer of table 4 expression formation comparative example 1～9 and the combination of bond layer composition.The adhesive power of adhesive power B (N) during 80 ℃ of adhesive power A (N), the binder layer 12b when in addition, expression has 80 ℃ of bond layer 13 of each comparative example 1～7, the bond layer 13 80 ℃ time the and binder layer 12b than (A/B), pick up success ratio (%).The jack-up of the pin that picks up in addition, highly is 450 μ m.
The mensuration of＜adhesive power 〉
The self adhesive tape 12 of each tape for processing wafer of each tape for processing wafer 10 of embodiment 1～3 and comparative example 1～9 is maintained 80 ℃, simultaneously, with JIS Z 0237 is benchmark, uses RHESCA glue viscous force determination test machine that the adhesive power of binder layer 12b is measured.The adhesive film of each tape for processing wafer of each tape for processing wafer 10 of embodiment 1～3 and comparative example 1～9 is maintained 80 ℃, simultaneously, with JIS Z 0237 is benchmark, uses RHESCA glue viscous force determination test machine that the adhesive power of bond layer 13 is measured.
＜pick up the mensuration of success ratio 〉
Under 70 ℃ of conditions, with silicon wafer (semiconductor wafer) 1 heating of thickness 100 μ m being fitted on each tape for processing wafer of each tape for processing wafer 10 of embodiment 1～3 and comparative example 1～9 10 seconds, then, be cut into the semi-conductor chip 2 of 10mm * 10mm.Thereafter by air-cooled type high pressure mercury vapour lamp (80W/cm, irradiation distance 10cm) to binder layer 12b with 200J/cm
2Irradiation ultraviolet radiation.Thereafter, to 50 semi-conductor chip 2 of the central part that is positioned at silicon wafer (semiconductor wafer) 1, (NEC machinery system, trade(brand)name CPS-100FM) picks up by the chip join device, obtains and picks up success ratio, and its result is estimated.Need to prove, the chip that maintains the bond layer of peeling off from binder layer 12b 13 on the semi-conductor chip 2 that has picked up as the chip that picks up success, is calculated and picked up success ratio.
Among the embodiment 1, adhesive power during 80 ℃ of binder layer 12b (below, be called adhesive power B) be 0.531 (N) of the following scope of above-mentioned 0.9 (N) of the adhesive power B of regulation, and the adhesive power of the adhesive power (adhesive power B) the during adhesive power (hereinafter referred to as adhesive power A) during 80 ℃ of bond layer 13 and binder layer 12b 80 ℃ than (A/B) for the regulation adhesive power than (A/B) above-mentioned 6.0 or more and 7.0 following scopes interior 6.9, therefore, picking up success ratio is 100%.
Among the embodiment 2, adhesive power B is 0.566 (N) of the following scope of above-mentioned 0.9 (N) of regulation adhesive power B, and adhesive power is above-mentioned 6.0 or more and the scope 7.0 below in 6.5 of regulation adhesive power than (A/B) than (A/B), and therefore, picking up success ratio is 100%.
Among the embodiment 3, adhesive power B is 0.584 (N) of the following scope of above-mentioned 0.9 (N) of regulation adhesive power B, and adhesive power is above-mentioned 6.0 or more and the scope 7.0 below in 6.1 of regulation adhesive power than (A/B) than (A/B), and therefore, picking up success ratio is 100%.
In the comparative example 1, adhesive power B is 0.864 (N) of the following scope of above-mentioned 0.9 (N) of regulation adhesive power B, but adhesive power than (A/B) be than the regulation adhesive power than (A/B) above-mentioned 6.0 or more and the lower value of the scope below 7.0 little 4.2, therefore, pick up success ratio and be reduced to 32%.
In the comparative example 2, adhesive power B is 0.531 (N) of the following scope of above-mentioned 0.9 (N) of regulation adhesive power B, but adhesive power than (A/B) be than the regulation adhesive power than (A/B) above-mentioned 6.0 or more and the higher limit of the scope below 7.0 big 7.5, therefore, pick up success ratio and be reduced to 28%.
In the comparative example 3, adhesive power B is 0.618 (N) of the following scope of above-mentioned 0.9 (N) of regulation adhesive power B, but adhesive power than (A/B) be than the regulation adhesive power than (A/B) above-mentioned 6.0 or more and the lower value of the scope below 7.0 little 5.9, therefore, pick up success ratio and be reduced to 81%.
In the comparative example 4, adhesive power B is 0.531 (N) of the following scope of above-mentioned 0.9 (N) of regulation adhesive power B, but adhesive power than (A/B) be than the regulation adhesive power than (A/B) above-mentioned 6.0 or more and the higher limit of the scope below 7.0 big 7.3, therefore, pick up success ratio and be reduced to 22%.
In the comparative example 5, adhesive power B is 0.531 (N) of the following scope of above-mentioned 0.9 (N) of regulation adhesive power B, but adhesive power than (A/B) be than the regulation adhesive power than (A/B) above-mentioned 6.0 or more and the higher limit of the scope below 7.0 big 7.1, therefore, pick up success ratio and be reduced to 76%.
In the comparative example 6, adhesive power B is 0.531 (N) of the following scope of above-mentioned 0.9 (N) of regulation adhesive power B, but adhesive power than (A/B) be than the regulation adhesive power than (A/B) above-mentioned 6.0 or more and the higher limit of the scope below 7.0 big 7.7, therefore, pick up success ratio and be reduced to 9%.
In the comparative example 7, adhesive power B is 0.851 (N) of the following scope of above-mentioned 0.9 (N) of regulation adhesive power B, but adhesive power than (A/B) be than the regulation adhesive power than (A/B) above-mentioned 6.0 or more and the lower value of the scope below 7.0 little 4.3, therefore, pick up success ratio and be reduced to 28%.
In the comparative example 8, adhesive power is above-mentioned 6.0 or more and the scope 7.0 below in 6.2 of regulation adhesive power than (A/B) than (A/B), but adhesive power B is than following 0.908 big (N) of range limit value of above-mentioned 0.9 (N) of regulation adhesive power B, therefore, picks up success ratio and is reduced to 0%.
In the comparative example 9, adhesive power is above-mentioned 6.0 or more and the scope 7.0 below in 6.9 of regulation adhesive power than (A/B) than (A/B), but adhesive power B is range limit value big 0.908 (N) following than above-mentioned 0.9 (N) of the adhesive power B of regulation, therefore, picks up success ratio and is reduced to 0%.
In the tape for processing wafer 10 of present embodiment, the adhesive power of the bond layer 13 with 80 ℃ the time is made as A, when the adhesive power of the binder layer 12b during with 80 ℃ is made as B, satisfy B≤0.9 (N), and 6.0≤(A/B)≤7.0.
Adhesive power B during 80 ℃ of binder layer 12b is below 0.9 (N), and the ratio (A/B) of the adhesive power of the adhesive power B during the adhesive power A during 80 ℃ of bond layer 13 and binder layer 12b 80 ℃ is in the scope more than 6.0 and below 7.0, and peeling off between binder layer 12b and the bond layer 13 becomes easy.
As mentioned above, can be in picking up operation, the semi-conductor chip 2 that easily will be attached with the state of bond layer 13 picks up from the binder layer 12b of tape for processing wafer 10.Therefore, the success ratio ratio that picks up of the semi-conductor chip 2 of the state that is attached with bond layer 13 is improved in the past.In addition, even under the situation of thin semi-conductor chip 2, because peeling off easily between binder layer 12b and the bond layer 13, the picking up semiconductor chip 2 so also can not increase the jack-up power of pin and jack-up height, therefore, can under the not damaged situation of the low semi-conductor chip 2 of intensity, pick up.
Claims (1)
1. a tape for processing wafer is characterized in that, it is the tape for processing wafer that is formed with base material film, binder layer and bond layer successively,
The adhesive power of the described bond layer with 80 ℃ the time is made as A, when the adhesive power of the described binder layer during with 80 ℃ is made as B, B≤0.9N, and 6.0≤A/B≤7.0.
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| CN102250555B (en) | 2015-04-01 |
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