CN105694745B - Tape for processing wafer - Google Patents
Tape for processing wafer Download PDFInfo
- Publication number
- CN105694745B CN105694745B CN201510870409.3A CN201510870409A CN105694745B CN 105694745 B CN105694745 B CN 105694745B CN 201510870409 A CN201510870409 A CN 201510870409A CN 105694745 B CN105694745 B CN 105694745B
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- China
- Prior art keywords
- mold release
- oxidant layer
- release film
- film
- gluing oxidant
- Prior art date
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Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Dicing (AREA)
- Adhesive Tapes (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The issue of the present invention is to provide a kind of tape for processing wafer, can reduce the generation of label trace, no matter and while can reduce with the thickness of gluing oxidant layer as where selected supporting member and be involved in air between gluing oxidant layer and bonding film.It is characterized in that, having：Long mold release film (11)；Gluing oxidant layer (12) is arranged on the 1st face of mold release film (11) and has defined flat shape；Bonding film (13), peripheral portion (13b) with label portion (13a) and the outside for surrounding label portion (13a), label portion (13a) is arranged by rubber cover adhesive layer (12) and in a manner of being contacted with mold release film (11) around gluing oxidant layer (12), and has defined flat shape；And supporting member (14), it is arranged on 2nd face opposite with the 1st face of mold release film (11), and comprising and gluing oxidant layer (12) corresponding part and region not comprising part corresponding with the end on the short side direction of the mold release film (11) of label portion (13a) in, the long side direction along mold release film (11) is arranged.
Description
Technical field
The present invention relates to tape for processing wafer, more particularly to 2 with chip cutting band and chip junction film
Tape for processing wafer.
Background technology
Recently, a kind of chip cutting-chip bonding ribbon is being developed, is having both and semiconductor wafer is cut off into separation (chip
Cutting) chip cutting band for fixing semiconductor wafer and for gluing the semiconductor chip after cut-out when being each chip
It is connected to lead frame or package substrate etc. or the chip for semiconductor chip to be stacked on one another, is bonded in stacked package connects
Close 2 functions of film (also referred to as chip attachment film).
As such chip cutting-chip bonding ribbon, it is contemplated that chip attaching, chip cutting when to patch ring
The operability of the installation of frame etc. implements precut processing sometimes.
The example of chip cutting-chip bonding ribbon after precut processing is shown in figures 4 and 5.Fig. 4 is indicated core
Piece cutting-chip bonding ribbon is wound as the figure of scroll-like state, and Fig. 5 (a) is the vertical view of chip cutting-chip bonding ribbon,
Fig. 5 (b) is the sectional view of the line B-B based on Fig. 5 (a).Chip cutting-chip bonding ribbon 50 includes mold release film 51, gluing oxidant layer
52 and bonding film 53.Gluing oxidant layer 52 is processed as circle corresponding with the shape of chip, has circular tag shape.Bonding film 53
In eliminate the neighboring area of circular portion corresponding with the shape of patch ring frame of chip cutting, as shown, with circle
Shape label portion 53a and surround its on the outside of peripheral portion 53b.The circular tag portion 53a of gluing oxidant layer 52 and bonding film 53 with by its
Center alignment mode be laminated, in addition, the circular tag portion 53a rubber covers adhesive layer 52 of bonding film 53 and around it with demoulding
Film 51 contacts.
When wafer chip is cut, mold release film 51 is removed from the gluing oxidant layer 52 and bonding film 53 of laminated arrangement, such as Fig. 6 institutes
Show, the back side of semiconductor wafer W is attached in gluing oxidant layer 52, in the peripheral part bonding of the circular tag portion 53a of bonding film 53
Fixed chip cutting patch ring frame R.In this state by semiconductor wafer W chip cutting, later, purple is implemented to bonding film 53
Semiconductor chip is picked up after the curing process such as outside line irradiation.At this point, the bonding force reduction due to curing process of bonding film 53,
It is easy to remove from gluing oxidant layer 52, is overleaf attached to pick up semiconductor chip in the state of gluing oxidant layer 52.It is attached to and partly leads
Semiconductor chip is adhered to lead frame, package substrate or other semiconductors by the gluing oxidant layer 52 at the back side of body chip later
When chip, work as chip junction film.
In addition, for just as chip cutting as described above-chip bonding ribbon 50, the circle of gluing oxidant layer 52 and bonding film 53
The part of shape label portion 53a stackings is thicker than the peripheral portion 53b of bonding film 53.Therefore, when being wound into a roll tubular as product, gluing
The laminated portions of the oxidant layer 52 and circular tag portion 53a of bonding film 53, the difference in height phase mutual respect with the peripheral portion 53a of bonding film 53
The phenomenon that folding, being happened at soft 52 surface transfer difference in height of gluing oxidant layer, i.e., such transfer trace shown in Fig. 7 is (also referred to as
Label trace, wrinkle or winding trace).The generation of such transfer trace is especially in gluing oxidant layer 52 by soft resin shape
At the case where, there is a situation where more than the winding number of the case where thickness and band 50 etc. significantly.Then, if generating transfer trace, exist
Lead to the possibility that unfavorable condition is generated in the processing of chip by the poor attachment of gluing oxidant layer and semiconductor wafer.
In order to solve the problems, developing a kind of tape for processing wafer, be mold release film with provided with gluing
It is provided with supporting member on the 2nd opposite face of 1st face of oxidant layer and bonding film and at the both ends of the short side direction of mold release film
(for example, referring to patent document 1).Such tape for processing wafer is provided with supporting member, therefore is rolled up by tape for processing wafer
Around be scroll-like when, can will to apply winding pressure disperse or concentrate on supporting member, therefore, can inhibit to glue
The formation of the Zhuan Yin Trace of adhesive layer.
Existing technical literature
Patent document
Patent document 1：No. 4360653 bulletins of Japanese Patent No.
Invention content
The subject that the invention solves
However, in the tape for processing wafer described in above patent document 1, in order to fully inhibit to turn to gluing oxidant layer
The formation for printing Trace, needs to set the thickness of supporting member to the thickness of gluing oxidant layer or more, therefore exists in supporting member
There are problems that restricting in selected.In addition, bonding film rubber cover adhesive layer and contacted with mold release film around it, but according to gluing
The thickness of oxidant layer generates minimum gap, residual air (air) between mold release film and bonding film sometimes.Above patent document 1
Described in tape for processing wafer the short side direction both ends of mold release film be provided with supporting member, therefore by chip process use
Tape wrapping as hollow structure between label portion and the mold release film wound on it, therefore occurs in scroll-like state
There are problems that above-mentioned air (air) is mobile and invades the possibility between gluing oxidant layer and bonding film.In gluing oxidant layer and glue
It closes the air (air) invaded between film and is also referred to as hole (void), there is the bad hair of fitting made for semiconductor wafer W
It is raw, cause after semiconductor wafer W chip cutting process or chip pickup process, the yield rate of bonding process reduction
Possibility.
Therefore, the issue of the present invention is to provide a kind of tape for processing wafer, can reduce the generation of label trace, and
No matter can be with the thickness of gluing oxidant layer as where selected supporting member, while can reduce and be rolled up between gluing oxidant layer and bonding film
Enter air (air).
The method to solve the problem
To solve the above problem, tape for processing wafer according to the present invention is characterized by having：Long demoulding
Film；Gluing oxidant layer is arranged on the 1st face of the mold release film and has defined flat shape；Bonding film has label portion
With the peripheral portion in the outside for surrounding the label portion, the label portion is to cover the gluing oxidant layer and in the gluing oxidant layer
Around the mode that is contacted with the mold release film be arranged, and there is defined flat shape；And supporting member, it is arranged in institute
State mold release film be provided on opposite the 2nd face of the gluing oxidant layer and the 1st face of the bonding film, and comprising with institute
State the corresponding part of gluing oxidant layer and not comprising corresponding with the end on the short side direction of the mold release film of the label portion
Part region in, along the mold release film long side direction be arranged.
In addition, above-mentioned semiconductor machining is set to the preferred above-mentioned supporting member of band in the short side direction of above-mentioned mold release film
Centre portion.
In addition, above-mentioned semiconductor machining uses band preferably：In above-mentioned supporting member, the width of the short side direction of above-mentioned mold release film
For 10~50mm.
Invention effect
According to the present invention it is possible to the generation of label trace be reduced, no matter and can be with the thickness of gluing oxidant layer as where selected
Supporting member, while can reduce and be involved in air between gluing oxidant layer and bonding film.
Description of the drawings
(a) of Fig. 1 is the vertical view of the tape for processing wafer involved by embodiments of the present invention, be (b) (a) based on
The sectional view of line A-A.
Fig. 2 is the sectional view of the tape for processing wafer involved by another embodiment of the present invention.
Fig. 3 is the sectional view of the tape for processing wafer involved by further another embodiment of the present invention.
Fig. 4 is the stereogram of previous tape for processing wafer.
(a) of Fig. 5 is the vertical view of previous tape for processing wafer, is (b) sectional view based on line B-B of (a).
Fig. 6 is the sectional view for the state for showing that tape for processing wafer and chip cutting are bonded with patch ring frame.
Fig. 7 is the schematic diagram of the unfavorable condition for illustrating previous tape for processing wafer.
Specific implementation mode
Embodiments of the present invention are explained in detail below based on attached drawing.Fig. 1 (a) is involved by embodiments of the present invention
And tape for processing wafer (chip cutting-chip bonding ribbon) vertical view, Fig. 1 (b) is the section based on line A-A of Fig. 1 (a)
Figure.
As shown in Fig. 1 (a) and Fig. 1 (b), tape for processing wafer 10 has long mold release film 11, gluing oxidant layer 12, bonding film
13 and supporting member 14.
Gluing oxidant layer 12 is set on the 1st face of mold release film, has circular tag shape corresponding with the shape of chip.It is viscous
Close the peripheral portion 13b that film 13 has circular tag portion 13a and surrounds the outside of circular tag portion 13a, the circular tag portion
13a is arranged by rubber cover adhesive layer 12 and in a manner of being contacted with mold release film around gluing oxidant layer 12.Peripheral portion 13b includes
Form that the outside of circular tag portion 13a is surrounded completely and it is as shown in the figure halfway around form.Circular tag portion
13a has shape corresponding with incisory patch ring frame.Moreover, supporting member 14 be arranged mold release film 11 be provided with glue
On the 2nd opposite 1st face 11a of stick 12 and bonding film 13 face 11b, and it is arranged and is including portion corresponding with gluing oxidant layer 12
Divide and do not include the region r of part corresponding with the end on the short side direction of the mold release film 11 of label portion 13a.
Hereinafter, being explained in detail to each integral part of the tape for processing wafer 10 of present embodiment.
(mold release film)
As the mold release film 11 that uses in the tape for processing wafer 10 of the present invention, can use polyester (PET, PBT, PEN,
PBN, PTT) system, polyolefin (PP, PE) system, copolymer (EVA, EEA, EBA) system or by these material parts replace into
The film that one step improves cementability, mechanical strength.Furthermore it is possible to for the laminated body of these films.
The thickness of mold release film is not particularly limited, and can suitably set, but preferably 25~50 μm.
(gluing oxidant layer)
The gluing oxidant layer 12 of the present invention is as described above, the shape with formation and chip on the 1st face 11a of mold release film 11
The corresponding circular tag shape of shape.
Gluing oxidant layer 12, when picking up chip, is attached to chip back after fitting and chip cutting semiconductor wafer etc.,
It is used as adhesive when chip is fixed on substrate, lead frame.As gluing oxidant layer 12 it is preferable to use containing selected from
Epoxy system resin, acrylic resin, at least one kind of viscose glue stick etc. in phenolic aldehyde system resin.In addition to this, it can also use
Polyimides system resins, silicone-based resin.Its thickness can be suitably set, but preferably 5~100 μm or so.
(bonding film)
The bonding film 13 of the present invention is as described above, with round mark corresponding with the shape of patch ring frame of chip cutting
Label portion 13a and surround its on the outside of peripheral portion 13b.By precut processing circular tag portion can be removed from film adhesive
The neighboring area of 13a forms such bonding film.
It as bonding film 13, is not particularly limited, as long as not removed with chip when cutting wafer chip sufficient
Bonding force shows the low bonding force that can be easily removed from gluing oxidant layer when picking up chip after chip cutting.
For example, the bonding film for being provided with adhesive phase in base material film can be properly used.
As the base material film of bonding film 13, as long as being used without particular limitation for known base material film,
But, it is preferable to use having the radioparent base material of radioactive ray when using the material of radiation-curable as aftermentioned adhesive phase
Film.
For example, as its material, polyethylene, polypropylene, ethylene-propylene copolymer, PB Polybutene-1, poly- 4- first can be enumerated
Base amylene -1, vinyl-vinyl acetate copolymer, ethylene-ethyl acrylate copolymer, ethylene-methyl acrylate copolymer, second
Homopolymer or copolymer or their mixture, polyurethane, the styrene-second of the alpha-olefins such as alkene-acrylic copolymer, ionomer
The thermoplastic elastomer (TPE)s such as alkene-butylene or amylene based copolymer, polyamide-polyol copolymer and their mixture.In addition,
Base material film can be the base material film that the material of more than two kinds in their group mixes, and can also be by their single layers
Or base material film made of multiple stratification.
The thickness of base material film is not particularly limited, and can suitably set, but preferably 50~200 μm.
The resin used in adhesive phase as bonding film 13, is not particularly limited, and can use and be used in adhesive
Well known chlorinated polypropylene resin, acrylic resin, polyester resin, polyurethane resin, epoxy resin etc..
It is preferred that suitably coordinating acrylic adhesive, radioactive ray polymerizable compound, light in the resin of adhesive phase 13
Polymerization initiator, curing agent etc. prepare adhesive.The thickness of adhesive phase 13 is not particularly limited and can suitably set, but
It is preferred that 5~30 μm.
It Combined with Radiotherapy ray polymerization compound and can be made it easy within the adhesive layer from glue by radiation-curing
Adhesive layer is removed.The radioactive ray polymerizable compound can be with use example as can three-dimensional nettedization be in the molecule by light irradiates
Harmonic component compound with the above optical polymerism carbon-to-carbon double bond of at least two.
Specifically, trimethylolpropane trimethacrylate, pentaerythritol triacrylate, pentaerythrite tetrapropylene can be applied
Acid esters, dipentaerythritol monohydroxypentaacryande, dipentaerythritol hexaacrylate, 1,4-butanediol diacrylate, 1,
6- hexanediyl esters, polyethyleneglycol diacrylate or oligoester acrylate etc..
In addition, other than acrylate based compound as described above, urethane acrylates can also be used
Ester system oligomer.The polyol compound of polyester-type or polyether-type etc. can be made with polyhydric isocyanate compound (for example, 2,4-
Toluene di-isocyanate(TDI), 2,6- toluene di-isocyanate(TDI)s, 1,3- eylylene diisocyanates, Isosorbide-5-Nitrae-xylylene two are different
Cyanate, diphenyl methane 4,4- diisocyanate etc.) reaction obtained by terminal isocyanate carbamate prepolymer with tool
Have hydroxyl acrylate or methacrylate (for example, 2-Hydroxy ethyl acrylate, methacrylic acid -2- hydroxy methacrylates,
2-hydroxypropyl acrylate, methacrylic acid -2- hydroxy propyl esters, polyethylene glycol acrylate, polyethylene glycol methacrylate-styrene polymer
Deng) reaction obtains urethane acrylate system oligomer.
Within the adhesive layer, it can be two or more mixture mixed in above-mentioned resin.
When using Photoepolymerizationinitiater initiater, such as benzoin iso-propylether, benzoin isobutyl ether, benzophenone, rice can be used
Chi ketone, clopenthixal ketone, dodecyl thioxanthones, dimethyl thioxanthone, diethyl thioxanthone, benzil dimethyl ketal, α-hydroxyl
Butylcyclohexyl phenyl ketone, 2- hyd roxymethyl phenyl propane etc..The use level of these Photoepolymerizationinitiater initiaters is total relative to acrylic acid series
100 mass parts of polymers preferably 0.01~5 mass parts.
(supporting member)
Supporting member 14 be arranged mold release film 11 be provided with adhesive 12 and the 1st face 11a of bonding film 13 is opposite
On 2nd face 11b, and comprising part corresponding with gluing oxidant layer 12 and not comprising with label portion 13a in the mold release film
It is arranged along the long side direction of mold release film 11 in the region r of the corresponding part in end on 11 short side direction.By being arranged in this way
Supporting member 14, when tape for processing wafer 10 is wound as scroll-like, to there are the part of supporting member 14 apply pressure,
Therefore be not in following situations：The laminated portions and bonding film 13 of the gluing oxidant layer 12 and circular tag portion 13a of bonding film 13
Peripheral portion 13a difference in height it is overlapped to as label trace in 12 surface transfer difference in height of gluing oxidant layer.In addition,
Tape for processing wafer 10 is wound as in scroll-like state, to there are the parts of supporting member 14 to apply pressure, circular tag
The end on the short side direction of mold release film 11 of portion 13a is unfettered, therefore by the thickness of gluing oxidant layer 12, in mold release film
Remaining air (air) is discharged to the outside of circular tag portion 13a in the gap generated between 11 and circular tag portion 13a.
As long as the position that supporting member 14 is arranged is in the r of region, as shown in Figure 1, can be in the whole region of region r
Setting, can also be arranged in the arbitrary position of a part of region r.In region when the part setting of r, as shown in Figure 2,3,
It is preferred that supporting member 14', 14 " are arranged in the central portion in the short side direction of mold release film.In addition, in the part setting branch of region r
When bearing member 14, the transfer trace of supporting member 14 is generated in gluing oxidant layer 12 sometimes, but transfer trace at this time is in mold release film 11
Long side direction linearly to generate, therefore smoothed out with the fingers by doubling roller in the case where being involved in hole when chip is bonded it is flat, from
And gap is discharged to outside label, thus it is different from the label trace randomly generated, problem will not be become.
Furthermore, it is possible to it is more more outward than shown in Fig. 1, i.e. until with circular tag portion 13a in the short side side of mold release film 11
Inclusion region r until near the corresponding part in upward end, but in order to allow to be easy by the thickness of gluing oxidant layer 12
Ground is by remaining air (air) in the gap generated between mold release film 11 and circular tag portion 13a to circular tag portion 13a's
Outside is discharged more quickly, preferably not excessively far from gluing oxidant layer 12.
As long as the width of the short side direction of mold release film be with comparable size in the r of region, be not particularly limited, but excellent
It is selected as 10~50mm.
The thickness of supporting member 14 be not necessarily to the laminated portions of gluing oxidant layer 12 and the circular tag portion 13a of bonding film 13,
Bigger identical as the comparable thickness of the difference in height of the peripheral portion 13b of bonding film 13, i.e. gluing oxidant layer 12, can suitably select.
When tape for processing wafer 10 is wound as scroll-like, to there are the part of supporting member 14 apply pressure, therefore to not with bearing structure
The label segment that part 14 contacts does not apply pressure, becomes hollow state, no matter therefore can be prevented with the thickness of gluing oxidant layer 12
Label trace.It is however also possible to be set as thickness identical as gluing oxidant layer 12 or more than it.In addition, as shown in figure 3, also may be used
The supporting member 14 " of thin adhesive tape has been laminated with setting.
Supporting member 14 can be intermittently or continuously arranged along the long side direction of mold release film 11, but from more effectively inhibiting
From the viewpoint of the generation for transferring trace, the long side direction preferably along base material film 11 is continuously provided.
In addition, supporting member 14 is from the viewpoint of the winding offset for preventing tape for processing wafer 10, preferably to bonding film
13 have the material of friction coefficient to a certain degree.Thus, it is possible to prevent the winding offset of tape for processing wafer 10, obtaining can be with
High-speed winding makes the increased effect of winding number.
Confficient of static friction between supporting member 14 and the base material film of bonding film 13 is preferably 0.2~2.0, more preferably
0.6~1.6.If tape for processing wafer is wound as it is scroll-like, mold release film 11 the 1st face sides 11a be arranged bonding film 13
Circular tag portion 13a contacted with the supporting member 14 being arranged in the 2nd face sides 11b of mold release film 11, therefore supporting member 14 with
When confficient of static friction between the base material film of bonding film 13 is as low as less than 0.2, become to be easy to happen winding during fabrication, when using
It deviates and operability deterioration.On the other hand, when being more than 2.0, the resistance mistake between the base material film and supporting member 14 of bonding film 13
Greatly, the reason of bendings are advanced when becoming operability deterioration or the high-speed winding of manufacturing process etc..Therefore, by will between the two
Confficient of static friction is set as above range, can prevent the winding offset of tape for processing wafer 10, obtain making it possible to high-speed winding,
It can make the increased effect of winding number.
In the present invention, supporting member 14 and bonding can be obtained by following such assay method according to JIS K7125
Confficient of static friction between the base material film of film 13.
Make that the base material film and the two of supporting member 14 for the bonding film 13 of 25mm (width) × 100mm (length) is respectively cut
Membrane sample overlaps, the film of fixed downside.Then, the weight of weight 200g is loaded in laminated film as load W, by upside
Film is measured the power Fd (g) when skidding off, confficient of static friction (μ d) is found out by formula below with the speed tensile of 200mm/min.
μ d=Fd/W
As supporting member 14, such as the glue sticking that viscose glue stick is coated in resin film base material can be properly used
Band.Such glue sticking band is attached by the specified position of the 2nd face 11b in mold release film 11, present embodiment can be formed
Tape for processing wafer 10.
As the substrate resin of glue sticking band, as long as the range for meeting above-mentioned linear expansion coefficient and as long as being resistant to winding pressure
It is not particularly limited, but from heat resistance, flatness and from the aspect of obtaining easness, preferably from polyethylene terephthalate
It is selected in ester (PET), polypropylene and high density polyethylene (HDPE).
The composition and physical property of adhesive about glue sticking band, are not particularly limited, as long as in tape for processing wafer 10
It is not removed from mold release film 11 in rolling step and keeping process.
In addition, as supporting member 14, the supporting member after coloring can be used.Structure is supported by using such coloring
Part can positively identify the type of band when tape for processing wafer is wound as scroll-like.For example, by being added according to chip
Type, the thickness of work band and keep the color of coloring supporting member 14 different, type, the thickness of band can be readily recognized, can
To inhibit, prevent the generation of artificial mistake.
Embodiment
Then, the embodiment of the present invention is illustrated, but the present invention is not limited to these Examples.
(1) making of bonding film
(bonding film 1A)
Suitably adjust infusion volume in solvent toluene 400g and instill n-butyl acrylate 128g, acrylic acid-2-ethyl oneself
Ester 307g, methyl methacrylate 67g, methacrylic acid 1.5g, as polymerization initiator benzoyl peroxide mixed liquor,
Reaction temperature and reaction time are adjusted, the solution of compound (1) with functional group is obtained.
Then in the polymer solution, suitably adjust infusion volume and be added as double with radiation-curable carbon-to-carbon
The compound (2) of key and functional group, the methacrylic acid -2- hydroxy methacrylates that are separately synthesized by methacrylic acid and ethylene glycol
2.5g, as polymerization inhibitor quinhydrones and adjust reaction temperature and reaction time, obtain that there is radiation-curable carbon-to-carbon double bond
The solution of compound (A).Then, relative in compound (A) solution in compound (A) solution in compound (A) solution
100 mass parts of compound (A) Japanese polyurethane corporation as polyisocyanates (B) is added：1 mass of coronate L
Part, as the Japanese Ciba-Geigy corporation of Photoepolymerizationinitiater initiater：0.5 mass parts of Irgacure-184, the acetic acid as solvent
150 mass parts of ethyl ester simultaneously mix, and are prepared for the adhesive composition of radiation-curable.
Then, it is applied in such a way that dry film thickness is 20 μm in the vinyl-vinyl acetate copolymer base material film of 100 μm of thickness
The adhesive phase composition prepared is applied, it is 3 minutes dry at 110 DEG C, make bonding film 1A.
(2) mold release film
Mold release film 2A as shown below is used.
Mold release film 2A：The demoulding that 38 μm of thickness treated polyethylene terephthalate film
(3) formation of gluing oxidant layer
(gluing oxidant layer 3A)
Comprising the cresol novalac type epoxy resin as epoxy resin, (epoxide equivalent 197, molecular weight 1200 are soft
Change point 70 DEG C) 50 mass parts, as 1.5 mass parts of γ mercaptopropyitrimethoxy silane of silane coupling agent, γ-uride third
3 mass parts of ethyl triethoxy silicane alkane, 30 mass parts of silica filler of average grain diameter 16nm composition in cyclohexanone is added
And be stirred, it further uses ball mill and is kneaded 90 minutes.
Acrylic resin (matter average molecular weight is added wherein：800000, -17 DEG C of glass transition temperature) 100 mass parts,
5 mass parts of dipentaerythritol hexaacrylate as 6 functional acrylate monomers, two isocyanide of hexa-methylene as curing agent
0.5 mass parts of adduction body, Curezol 2PZ (four countries are melted into (strain) trade name processed, 2- phenylimidazoles) 2.5 mass parts of acid esters,
It is stirred, vacuum outgas obtains adhesive.
It is coated with above-mentioned adhesive on mold release film 2A, in 110 DEG C of heat dryings 1 minute, forms the B-stage that film thickness is 20 μm
The film of state (the solidification intermediate state of thermosetting resin) forms gluing oxidant layer 3A, refrigeration keeping on mold release film 2A.
(gluing oxidant layer 3B)
It is coated with above-mentioned adhesive on mold release film 2A, in 110 DEG C of heat dryings 1 minute, forms the B-stage that film thickness is 60 μm
The film of state (the solidification intermediate state of thermosetting resin) forms gluing oxidant layer 3B, refrigeration keeping on mold release film 2A.
(gluing oxidant layer 3C)
It is coated with above-mentioned adhesive on mold release film 2A, in 110 DEG C of heat dryings 1 minute, forms the B ranks that film thickness is 120 μm
The film of section state (the solidification intermediate state of thermosetting resin) forms gluing oxidant layer 3C, refrigeration keeping on mold release film 2A.
(4) making of supporting member
(supporting member 4A)
By acrylic resin (matter average molecular weight：600000, -20 DEG C of glass transition temperature) 100 mass parts, as solidification
The polyisocyanate compound of agent (make, trade name by Japanese polyurethane (strain)：Coronate L) 10 mass parts be obtained by mixing it is viscous
Mixture composite.
Above-mentioned adhesive composition is coated on to the low density polyethylene (LDPE) of 40 μm of thickness in such a way that dry film thickness is 20 μm
Film, it is 3 minutes dry at 110 DEG C, obtained glue sticking band is cut to width 10mm, has made supporting member 4A.
(supporting member 4B)
Above-mentioned adhesive composition is coated on to the poly terephthalic acid of 100 μm of thickness in such a way that dry film thickness is 30 μm
Glycol ester film, it is 3 minutes dry at 110 DEG C, obtained glue sticking band is cut to width 25mm, has made supporting member 4B.
(supporting member 4C)
Other than the glue sticking band that will be obtained is cut to width 25mm, in the same manner as supporting member 4A, bearing has been made
Component 4C.
(supporting member 4D)
Other than the glue sticking band that will be obtained is cut to width 50mm, in the same manner as supporting member 4A, bearing has been made
Component 4D.
(embodiment 1)
Make the formation after refrigeration keeping there is the mold release film 2A of gluing oxidant layer 3A to restore to room temperature, for gluing oxidant layer, with to
The penetraction depth of mold release film adjusts the precut processing of circle for having carried out diameter 220mm for 10 μm of modes below.Later, it removes
It removes photoresist the unnecessary portion of adhesive layer, in a manner of so that the adhesive phase of bonding film 1A is contacted with gluing oxidant layer, in room temperature lamination
Mold release film 2A.Then, for bonding film 1A, by the penetraction depth to mold release film for 10 μm it is below in a manner of adjust and with gluing
Oxidant layer concentric circles have carried out the precut processing of circle of diameter 290mm.Then, for mold release film 2A with provided with adhesive
The 2nd opposite face of 1st face of layer and bonding film and it is bonded supporting member 4A in the short side direction central portion of mold release film 2A, made
The tape for processing wafer of embodiment 1 with structure shown in Fig. 2.
Other than (embodiment 2) replaces supporting member 4A in addition to using supporting member 4B, similarly to Example 1, make
The tape for processing wafer of embodiment 2.
(embodiment 3)
Other than replacing gluing oxidant layer 3A in addition to using gluing oxidant layer 3B, similarly to Example 1, embodiment 3 has been made
Tape for processing wafer.
(embodiment 4)
Other than replacing gluing oxidant layer 3A in addition to using gluing oxidant layer 3B, similarly to Example 2, embodiment 4 has been made
Tape for processing wafer.
(embodiment 5)
Other than replacing gluing oxidant layer 3A in addition to using gluing oxidant layer 3C, similarly to Example 1, embodiment 5 has been made
Tape for processing wafer.
(embodiment 6)
Other than replacing gluing oxidant layer 3A in addition to using gluing oxidant layer 3C, similarly to Example 2, embodiment 6 has been made
Tape for processing wafer.
(embodiment 7)
Other than replacing supporting member 4A in addition to using supporting member 4C, similarly to Example 3, embodiment 7 has been made
Tape for processing wafer.
(embodiment 8)
Other than replacing supporting member 4C in addition to using supporting member 4D, similarly to Example 7, embodiment 8 has been made
Tape for processing wafer.
(comparative example 1)
Make the formation after refrigeration keeping there is the mold release film 2A of gluing oxidant layer 3A to restore to room temperature, for gluing oxidant layer, with to
The penetraction depth of mold release film adjusts the precut processing of circle for having carried out diameter 220mm for 10 μm of modes below.Later, it removes
It removes photoresist the unnecessary portion of adhesive layer, in a manner of so that the adhesive phase of bonding film 1A is contacted with gluing oxidant layer, in room temperature lamination
Mold release film 2A.Then, for bonding film 1A, by the penetraction depth to mold release film for 10 μm it is below in a manner of adjust and with gluing
Oxidant layer concentric circles carry out the precut processing of circle of diameter 290mm, leave circular tag portion and peripheral portion, eliminate other not
Need part.Then, for mold release film 2A with provided with opposite the 2nd face of gluing oxidant layer and the 1st face of bonding film and de-
The short side direction both ends of mould film 2A are bonded supporting member 4A, made existing patent document 1 with structure shown in FIG. 1
The tape for processing wafer of comparative example 1.
(comparative example 2)
Other than replacing supporting member 4A in addition to using supporting member 4B, in the same manner as comparative example 1, comparative example 2 has been made
Tape for processing wafer.
(comparative example 3)
Other than replacing gluing oxidant layer 3A in addition to using gluing oxidant layer 3B, in the same manner as comparative example 1, comparative example 3 has been made
Tape for processing wafer.
(comparative example 4)
Other than replacing supporting member 4A in addition to using supporting member 4B, in the same manner as comparative example 3, comparative example 4 has been made
Tape for processing wafer.
(comparative example 5)
Other than replacing gluing oxidant layer 3A in addition to using gluing oxidant layer 3C, in the same manner as comparative example 2, comparative example 5 has been made
Tape for processing wafer.
(comparative example 6)
Other than being not provided with supporting member, in the same manner as comparative example 3, the tape for processing wafer of comparative example 6 has been made.
(comparative example 7)
Other than being not provided with supporting member, in the same manner as comparative example 5, the tape for processing wafer of comparative example 7 has been made.
[evaluation of the inhibition of label trace]
In such a way that the number of the bonding film of circular shape is 300, by the tape for processing wafer of embodiment and comparative example
It is wound as scroll-like, has made tape for processing wafer reel.The tape for processing wafer reel 1 that (5 DEG C) keepings obtain in refrigerator
A month.Later, reel is unlocked after so that tape for processing wafer reel is restored to room temperature, the presence or absence of label trace is visually observed, is based on
Evaluation criteria below, with zero, △, × 3 grades have rated tape for processing wafer transfer trace inhibition.In 1 He of table
Result is shown in table 2.
Zero (non-defective unit)：From various angles visually from can not also confirm label trace
△ (allows product)：Label trace can be confirmed but be less than the degree impacted to the manufacturing procedure of semiconductor device
× (defective products)：The label trace affected to the manufacturing procedure of semiconductor device can be confirmed
[evaluation for the inhibition of air being involved in]
In such a way that the number of the bonding film of circular shape is 200, by the tape for processing wafer of embodiment and comparative example
It is wound as scroll-like, has made tape for processing wafer reel.Obtained tape for processing wafer reel is put into packaging bag, in refrigerator
After interior (5 DEG C) keepings 1 month, taken care of 3 days in the case where belt surface is as -50 DEG C of dry ice atmosphere.Later, tape for processing wafer is made to roll up
Cylinder restores to packaging bag breaking a seal after room temperature, unlocks reel, visually observation the circular tag portion of gluing oxidant layer and bonding film it
Between whether have being involved in for air, by not air be involved in be evaluated as zero (non-defective unit), by have air be involved in be evaluated as ×
(defective products) has carried out the evaluation for the inhibition of the air of tape for processing wafer being involved in.Result is shown in Tables 1 and 2.
[table 1]
[table 2]
As shown in table 1, the tape for processing wafer involved by Examples 1 to 8, in 2nd face opposite with the 1st face of mold release film
It is upper and comprising part corresponding with gluing oxidant layer, not comprising the end pair on the short side direction of mold release film with label portion
In the region for the part answered, it is provided with supporting member along the long side direction of mold release film, therefore as inhibition, the sky of label trace
The all excellent result of the inhibition being involved in of gas.
In contrast, it is provided with the chip involved by the comparative example 1~4 of supporting member at the both ends of mold release film and processes use
Band as shown in table 2, becomes the result for the inhibition difference of air being involved in.It is not provided with involved by the comparative example 6,7 of supporting member
Tape for processing wafer air the inhibition being involved in become it is excellent as a result, but in the inhibition of label trace become difference
As a result.
In addition, in tape for processing wafer involved by identical with the thickness of the supporting member comparative example of gluing oxidant layer 3, confirm
To will not be to the label trace for the degree that the manufacturing procedure of semiconductor device impacts.In contrast, involved by embodiment 3
In tape for processing wafer, even if label trace is not generated gluing oxidant layer is identical as the thickness of supporting member yet.
Symbol description
10：Tape for processing wafer
11：Mold release film
12：Gluing oxidant layer
13：Bonding film
13a：Circular tag portion
13b：Peripheral portion
14、14'、14"：Supporting member
Claims (3)
1. a kind of tape for processing wafer, which is characterized in that have：
Long mold release film,
Gluing oxidant layer is arranged on the 1st face of the mold release film and has defined flat shape,
Bonding film, the peripheral portion with label portion and the outside for surrounding the label portion, the label portion is to cover the gluing
The oxidant layer and mode contacted with the mold release film around the gluing oxidant layer is arranged, and there is defined flat shape,
And
Supporting member, be arranged the mold release film be provided with opposite the 2nd face of the gluing oxidant layer and the 1st face of bonding film
On, and comprising part corresponding with the gluing oxidant layer and not comprising with the label portion in the short of the mold release film
In the region of the corresponding part in end on edge direction, the long side direction along the mold release film is arranged.
2. tape for processing wafer according to claim 1, which is characterized in that
The supporting member is set to the central portion of the short side direction of the mold release film.
3. tape for processing wafer according to claim 1 or 2, which is characterized in that
In the supporting member, the width of the short side direction of the mold release film is 10~50mm.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014-246313 | 2014-12-04 | ||
| JP2014246313A JP6410582B2 (en) | 2014-12-04 | 2014-12-04 | Wafer processing tape |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105694745A CN105694745A (en) | 2016-06-22 |
| CN105694745B true CN105694745B (en) | 2018-10-09 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510870409.3A Active CN105694745B (en) | 2014-12-04 | 2015-12-02 | Tape for processing wafer |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6410582B2 (en) |
| KR (1) | KR101809331B1 (en) |
| CN (1) | CN105694745B (en) |
| TW (1) | TWI615890B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7446095B2 (en) * | 2019-12-03 | 2024-03-08 | デクセリアルズ株式会社 | Manufacturing method of film wrapping body and connection body |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101569002A (en) * | 2007-09-14 | 2009-10-28 | 古河电气工业株式会社 | Wafer processing tape |
| CN102687257A (en) * | 2009-11-13 | 2012-09-19 | 日立化成工业株式会社 | Semiconductor device, method for manufacturing semiconductor device, and semiconductor wafer provided with adhesive layer |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH04360653A (en) | 1991-06-06 | 1992-12-14 | Tochigi Pref Gov | Production of egg highly containing polybasic unsaturated fatty acid of hemp seed |
| JP4540299B2 (en) | 2003-05-09 | 2010-09-08 | リンテック株式会社 | Laminated sheet winding body and method for manufacturing the same |
| JP4087169B2 (en) * | 2002-07-05 | 2008-05-21 | リンテック株式会社 | Laminated sheet and method for producing the same |
| JP4970863B2 (en) * | 2006-07-13 | 2012-07-11 | 日東電工株式会社 | Workpiece processing method |
| JP4879702B2 (en) * | 2006-10-20 | 2012-02-22 | リンテック株式会社 | Die sort sheet and chip transfer method having adhesive layer |
| JP4360653B2 (en) * | 2007-09-14 | 2009-11-11 | 古河電気工業株式会社 | Wafer processing tape |
| JP2011174042A (en) * | 2010-02-01 | 2011-09-08 | Nitto Denko Corp | Film for producing semiconductor device and method for producing semiconductor device |
| JP5716322B2 (en) * | 2010-08-30 | 2015-05-13 | 日立化成株式会社 | Wafer processing tape |
| JP2012082285A (en) * | 2010-10-08 | 2012-04-26 | Hitachi Chemical Co Ltd | Adhesive sheet |
| JP5733049B2 (en) * | 2011-06-23 | 2015-06-10 | 日立化成株式会社 | Adhesive sheet, adhesive sheet manufacturing method, adhesive sheet roll, semiconductor device manufacturing method, and semiconductor device |
-
2014
- 2014-12-04 JP JP2014246313A patent/JP6410582B2/en active Active
-
2015
- 2015-12-01 TW TW104140171A patent/TWI615890B/en active
- 2015-12-02 KR KR1020150170550A patent/KR101809331B1/en active IP Right Grant
- 2015-12-02 CN CN201510870409.3A patent/CN105694745B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101569002A (en) * | 2007-09-14 | 2009-10-28 | 古河电气工业株式会社 | Wafer processing tape |
| CN102093828A (en) * | 2007-09-14 | 2011-06-15 | 古河电气工业株式会社 | Wafer processing tape |
| CN102687257A (en) * | 2009-11-13 | 2012-09-19 | 日立化成工业株式会社 | Semiconductor device, method for manufacturing semiconductor device, and semiconductor wafer provided with adhesive layer |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201633388A (en) | 2016-09-16 |
| KR20160067755A (en) | 2016-06-14 |
| JP6410582B2 (en) | 2018-10-24 |
| KR101809331B1 (en) | 2017-12-14 |
| JP2016111162A (en) | 2016-06-20 |
| CN105694745A (en) | 2016-06-22 |
| TWI615890B (en) | 2018-02-21 |
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