CN105694748B - Tape for processing wafer - Google Patents
Tape for processing wafer Download PDFInfo
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- CN105694748B CN105694748B CN201510870713.8A CN201510870713A CN105694748B CN 105694748 B CN105694748 B CN 105694748B CN 201510870713 A CN201510870713 A CN 201510870713A CN 105694748 B CN105694748 B CN 105694748B
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- Prior art keywords
- mold release
- film
- adhesive layer
- release film
- tape
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2433/00—Presence of (meth)acrylic polymer
- C09J2433/006—Presence of (meth)acrylic polymer in the substrate
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2461/00—Presence of condensation polymers of aldehydes or ketones
- C09J2461/006—Presence of condensation polymers of aldehydes or ketones in the substrate
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2463/00—Presence of epoxy resin
- C09J2463/006—Presence of epoxy resin in the substrate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Dicing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Adhesive Tapes (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The present invention provides a kind of tape for processing wafer, and the tape for processing wafer can reduce the generation of label trace, and can reduce being involved in for the air between adhesive layer and bonding film (air).Characterized by possessing long mold release film (11)；Adhesive layer (12) is arranged on the 1st face of mold release film (11) and has defined flat shape；Bonding film (13), its peripheral portion (13b) with label portion (13a) and the outside for surrounding label portion (13a), label portion (13a) is arranged in a manner of covering adhesive layer (12) and contact with above-mentioned mold release film (11) around adhesive layer (12), and has defined flat shape；And supporting member (14), it is arranged on 2nd face opposite with the 1st face of mold release film (11) and the both ends of the short side direction for mold release film (12), and is arranged in a manner of the region corresponding with the end of adhesive layer (12) in the short side direction to reach the mold release film (11).
Description
Technical field
The present invention relates to tape for processing wafer, more particularly to dicing tape and chip junction film this 2 functions
Tape for processing wafer.
Background technique
Recently, the cutting-for having both this 2 functions of dicing tape and chip junction film (also referred to as chip attachment film) is developed
Chip bonding ribbon, the dicing tape are used for when being each chip by semiconductor wafer cutting separation (cutting) by semiconductor die
Piece is fixed, and the semiconductor chip after the chip junction film is used to cut off is Nian Jie with lead frame or package substrate etc., Huo Zhe
For being laminated, being bonded between semiconductor chip in stacked package.
As such cutting-chip bonding ribbon, it is contemplated that installation when stickup with chip, cutting on patch ring frame
Etc. workability, some implement precut processing.
Cutting-chip bonding ribbon example after precut processing is shown in Fig. 4 and Fig. 5.Fig. 4 is to show cutting-chip
Engagement reels as the figure of the state after roller shape, and Fig. 5 (a) is cutting-chip bonding ribbon top view, and Fig. 5 (b) is Fig. 5 (a)
Line B-B cross-sectional view.Cutting-chip bonding ribbon 50 includes mold release film 51, adhesive layer 52 and bonding film 53.Adhesive layer 52
It is processed into circle corresponding with the shape of chip, there is circular tag shape.Bonding film 53 is and incisory patch ring frame
The corresponding circular portion of shape neighboring area be removed after film, as shown, have circular tag portion 53a and surround its
The peripheral portion 53b in outside.Adhesive layer 52 is aligned stacking, and bonding film with the center of the circular tag portion 53a of bonding film 53
53 circular tag portion 53a covers adhesive layer 52, and contacts around it with mold release film 51.
In cut crystal, mold release film 51 is removed from the adhesive layer 52 and bonding film 53 of laminated arrangement, as shown in fig. 6,
The back side that semiconductor wafer W is pasted on adhesive layer 52, is adhesively fixed in the peripheral part of the circular tag portion 53a of bonding film 53
Cutting patch ring frame R.Cutting semiconductor chip W in this state implements the solidifications such as ultraviolet light irradiation to bonding film 53 later
Semiconductor chip is picked up in processing.At this point, the bonding force decline due to curing process of bonding film 53, is easy to from adhesive layer
52 removings, semiconductor chip are picked with the state for being overleaf attached with adhesive layer 52.Adhere at the back side of semiconductor chip
Adhesive layer 52 after when by semiconductor chip with lead frame, package substrate or other Nian Jie semiconductor chips, as
Chip junction film plays a role.
In addition, in cutting-chip bonding ribbon 50 as described above, the circular tag portion of adhesive layer 52 and bonding film 53
The part that 53a is laminated is thicker than the peripheral portion 53b of bonding film 53.Therefore, when being roller shape as product volume, adhesive layer
52 and the laminated portions of circular tag portion 53a and the height difference of the peripheral portion 53a of bonding film 53 of bonding film 53 overlap, generate
The soft 52 surface transfer height difference of adhesive layer the phenomenon that, transfer trace (also referred to as label trace, gauffer i.e. shown in Fig. 7
Or volume print).The generation of such transfer trace especially when adhesive layer 52 is formed by soft resin or when with thickness,
And cutting-chip bonding ribbon 50 volume number it is more when it is more significant.Moreover, if generate transfer trace, due to adhesive layer with
The poor attachment of semiconductor wafer is possible to lead to the problem of in the processing of chip.
In order to solve the problems, develop following tape for processing wafer: mold release film be provided with bonding agent
On the 2nd opposite face of 1st face of layer and bonding film and the both ends setting supporting member of the short side direction of mold release film (such as is joined
According to patent document 1).Such tape for processing wafer due to being provided with supporting member, by tape for processing wafer batch for
When roller shape, it can will be applied to batching pressure dispersion or the pressure being made to concentrate on supporting member for adhesive tape, therefore be able to suppress
Transfer the also formation on adhesive layer.
Existing technical literature
Patent document
Patent document 1: No. 4360653 bulletins of Japanese Patent No.
Summary of the invention
Subject to be solved by the invention
It is however generally that bonding film 53 covers adhesive layer 52 and contacts around it with mold release film 51, due to viscous
The thickness of oxidant layer 52 is connect, generates atomic sky between mold release film 51 and bonding film 53 in the peripheral part of adhesive layer 52 sometimes
Gap, thus residual air (air).Air between such mold release film 51 and bonding film 53 also occur sometimes it is mobile and to circle
The outside of label portion 53a is escaped, and will not be significantly affected at this time to physical property.
However, being arranged transferring trace in order to prevent as the tape for processing wafer of patent document 1 with bonding agent
When the supporting member of the thickness more than thickness of layer, become that there is bigger thickness on the outside of adhesive layer, therefore presence becomes to hold
Easily the air of adhesive layer peripheral part is lured to the risk of the inside of adhesive layer.
Therefore, the issue of the present invention is to provide a kind of tape for processing wafer, the tape for processing wafer can reduce mark
The generation of trace is signed, and can reduce being involved in for the air between adhesive layer and bonding film (air).
The method to solve the problem
To solve the above problem, tape for processing wafer according to the present invention is characterized in that, comprising: long demoulding
Film；Adhesive layer is arranged on the 1st face of above-mentioned mold release film and has defined flat shape；Bonding film has mark
The peripheral portion in label portion and the outside of the above-mentioned label portion of encirclement, above-mentioned label portion is to cover above-mentioned adhesive layer and in above-mentioned bonding
The mode contacted around oxidant layer with above-mentioned mold release film is arranged, and has defined flat shape；And supporting member, it sets
It sets on 2nd face opposite with the 1st face for being provided with above-mentioned adhesive layer and bonding film of above-mentioned mold release film and is arranged above-mentioned
The both ends of the short side direction of mold release film, and to reach the end with above-mentioned adhesive layer in the short side direction of above-mentioned mold release film
The mode in the corresponding region in portion is arranged.
In addition, above-mentioned semiconductor machining uses band preferably: by the above-mentioned supporting member in the short side direction of above-mentioned mold release film
The total of width is set as sD, and the diameter of above-mentioned adhesive layer is set asThe length of the short side direction of above-mentioned mold release film is set as
When L,
In addition, above-mentioned semiconductor machining band is preferably: the linear expansion coefficient of above-mentioned supporting member be 300ppm/ DEG C with
Under.
In addition, above-mentioned semiconductor machining uses band preferably: the linear expansion coefficient of above-mentioned supporting member and above-mentioned mold release film
The difference of linear expansion coefficient is 250ppm/ DEG C or less.
In addition, the above-mentioned bonding film of above-mentioned semiconductor machining band is preferred: having adhesive phase and base material film, above-mentioned substrate
Confficient of static friction between film and above-mentioned supporting member is 0.2~2.0.
In addition, above-mentioned semiconductor machining use band preferably: above-mentioned supporting member along above-mentioned mold release film longitudinal direction continuously
Setting.
In addition, above-mentioned semiconductor machining uses band preferably: above-mentioned supporting member has the thickness of above-mentioned adhesive layer or more
Thickness.
In addition, above-mentioned supporting member can be coloured in above-mentioned semiconductor machining band.At this point, the preferred root of supporting member
Type according to tape for processing wafer is coloured.Furthermore it is possible to which the thickness according to tape for processing wafer is coloured.
In addition, above-mentioned semiconductor machining band: preferred above-mentioned supporting member has 2 layers or more of stepped construction.
In addition, above-mentioned semiconductor machining band is preferably: above-mentioned supporting member be selected from polyethylene terephthalate,
The bonding crossed belt of bonding mixture is coated on resin film base material in polypropylene and high density polyethylene (HDPE).
In addition, above-mentioned semiconductor machining uses band preferably: the stretching storage elastic modulus of the above-mentioned bonding film under the conditions of 23 DEG C
The ratio between the stretching storage elastic modulus Ea of above-mentioned mold release film under the conditions of Eb and 23 DEG C Eb/Ea is 0.001~100.
In addition, above-mentioned semiconductor machining uses band preferably: the thickness Tb of the thickness Ta of above-mentioned mold release film and above-mentioned bonding film it
It is 0.07~2.5 than Ta/Tb.
In addition, above-mentioned semiconductor machining uses band preferably: under conditions of 23 ± 2 DEG C of temperature, peeling rate 300mm/min
In T-type disbonded test, the peeling force F1 between above-mentioned adhesive layer and above-mentioned mold release film is 0.025~0.075N/100mm, on
Stating the peeling force F2 between adhesive layer and above-mentioned bonding film is 0.08~10N/100mm, F1 < F2.
Invention effect
In accordance with the invention it is possible to reduce the generation of label trace, and it can reduce the sky between adhesive layer and bonding film
Gas (air's) is involved in.
Detailed description of the invention
Fig. 1 (a) is the top view of tape for processing wafer involved in embodiments of the present invention, (b) is the line A-A of (a)
Cross-sectional view.
Fig. 2 is the cross-sectional view of tape for processing wafer involved in another embodiment of the present invention.
Fig. 3 is the cross-sectional view of tape for processing wafer involved in yet another embodiment of the invention.
Fig. 4 is the perspective view of existing tape for processing wafer.
Fig. 5 (a) is the top view of existing tape for processing wafer, (b) is the cross-sectional view of the line B-B of (a).
Fig. 6 is the cross-sectional view for showing the state after tape for processing wafer and cutting patch ring frame patch.
The schematic diagram for the problem of Fig. 7 is for illustrating existing tape for processing wafer.
Specific embodiment
Embodiments of the present invention are explained in detail below based on attached drawing.Fig. 1 (a) is involved by embodiments of the present invention
Tape for processing wafer (cutting-chip bonding ribbon) top view, Fig. 1 (b) be Fig. 1 (a) line A-A cross-sectional view.
As shown in Fig. 1 (a) and Fig. 1 (b), tape for processing wafer 10 has long mold release film 11, adhesive layer 12, bonding film
13 and supporting member 14.
Adhesive layer 12 is arranged on the 1st face of mold release film, has circular tag shape corresponding with the shape of chip.It is viscous
Close the peripheral portion 13b that film 13 has circular tag portion 13a and surrounds the outside of circular tag portion 13a, the circular tag portion
13a is arranged in a manner of covering adhesive layer 12 and contact with mold release film around adhesive layer 12.Peripheral portion 13b includes
The form and the form that do not surround completely as shown in the figure that the outside of circular tag portion 13a is surrounded completely.Circular tag portion
13a has shape corresponding with incisory patch ring frame.Moreover, supporting member 14 mold release film 11 is set be provided with it is viscous
Connect the both ends for the short side direction that on opposite the 2nd face 11b of the 1st face 11a of agent 12 and bonding film 13 and mold release film 11 is set
Portion, and be arranged in a manner of the region corresponding with the end of adhesive layer 12 in the short side direction to reach mold release film 11.
The each component of the tape for processing wafer of present embodiment 10 is described in detail below.
(mold release film)
As mold release film 11 used in tape for processing wafer 10 of the invention, can be used polyester (PET, PBT, PEN,
PBN, PTT) system, polyolefin (PP, PE) system, copolymer (EVA, EEA, EBA) system and these material parts are replaced and into one
Step improves the film of cementability, mechanical strength.Alternatively, it is also possible to the laminated body for these films.
The thickness of mold release film is not particularly limited, and can properly set, and preferably 25~50 μm.
(adhesive layer)
Adhesive layer 12 of the invention is formed in as described above on the 1st face 11a of mold release film 11, has the shape with chip
Corresponding circular tag shape.
Adhesive layer 12 fitting and cutting semiconductor chip etc. it is rear, when picking up chip, be attached to chip back, as
Bonding agent when chip is fixed on substrate, lead frame uses.As adhesive layer 12, it is preferable to use containing selected from epoxy
It is resin, acrylic resin, at least one kind of bonding mixture in phenolic aldehyde system resin etc..Alternatively, it is also possible to use polyimides
It is resin, silicone-based resin.Its thickness can be suitable for setting, but preferably 5~100 μm or so.
(bonding film)
Bonding film 13 of the invention has circular tag portion corresponding with the shape of incisory patch ring frame as described above
13a and surround the peripheral portion 13b on the outside of it.Such bonding film, which can be removed by precut processing from film adhesive, to be justified
The neighboring area of shape label portion 13a is formed.
It as bonding film 13, is not particularly limited, as long as having sufficient bonding force without making chip in cut crystal
Removing when picking up chip after dicing, shows power low-adhesive so as to can easily remove from adhesive layer, so that it may appropriate
Ground uses the film that adhesive phase is for example provided on base material film.
As the base material film of bonding film 13, as long as known film, so that it may use, but make without particular limitation
, it is preferable to use having the radioparent film of radiation when using the material of radiation curing as aftermentioned adhesive phase.
For example, can be enumerated as its material: polyethylene, polypropylene, ethylene-propylene copolymer, PB Polybutene-1, poly- 4-
Methylpentene -1, vinyl-vinyl acetate copolymer, ethylene-ethyl acrylate copolymer, ethylene-methyl acrylate copolymer,
The homopolymer or copolymer or their mixture, polyurethane, benzene of the alpha-olefins such as ethylene-acrylic copolymers, ionomer
The thermoplastic elastomer (TPE)s such as ethylene-vinyl-butylene or amylene based copolymer, polyamide-polyol copolymer and their mixing
Object.In addition, the film that base material film can mix for two or more material in these, or their single layers are more
Film made of stratification.
The thickness of base material film is not particularly limited, and can properly set, but preferably 50~200 μm.
Resin used in adhesive phase as bonding film 13, is not particularly limited, and can be used in adhesive and uses
Well known chlorinated polypropylene resin, acrylic resin, polyester resin, polyurethane resin, epoxy resin etc..
It is preferred that suitably cooperate in the resin of adhesive phase 13 acrylic adhesive, radiation polymerizable compound,
Photoepolymerizationinitiater initiater, curing agent etc. prepare adhesive.The thickness of adhesive phase 13 can be not particularly limited and properly set,
But it is preferred that 5~30 μm.
It, can be easily from bonding by radiation curing after cooperating radiation polymerizable compound within the adhesive layer
Oxidant layer is removed.The radiation polymerizable compound, can be used for example to irradiate by light can occur three-dimensional nettedization
In the molecule with the above optical polymerism carbon-to-carbon double bond of at least two low molecular weight compound.
Specifically, it can apply: trimethylolpropane trimethacrylate, pentaerythritol triacrylate, pentaerythrite four
Acrylate, dipentaerythritol monohydroxypentaacryande, dipentaerythritol hexaacrylate, 1,4-butanediol diacrylate
Ester, 1,6- hexanediyl ester, polyethyleneglycol diacrylate, oligoester acrylate etc..
In addition, it is low that urethane acrylate system also can be used in addition to acrylate based compound as described above
Polymers.Urethane acrylate system oligomer can by make the polyol compounds such as polyester-type or polyether-type with it is polynary different
Cyanate esters are (for example, 2,4- toluene di-isocyanate(TDI)s, 2,6- toluene di-isocyanate(TDI), 1,3- xylylene, two isocyanide
Acid esters, Isosorbide-5-Nitrae-eylylene diisocyanate, diphenyl methane 4,4- diisocyanate etc.) it reacts to obtain terminal isocyanate acid
Ester carbamate prepolymer, then make the terminal isocyanate carbamate prepolymer with hydroxyl acrylate or
Methacrylate is (for example, acrylic acid 2- hydroxy methacrylate, 2-hydroxyethyl methacrylate, acrylic acid 2- hydroxy propyl ester, methyl
Acrylic acid 2- hydroxy propyl ester, polyethylene glycol acrylate, polyethylene glycol methacrylate-styrene polymer etc.) it reacts to obtain.
Two or more in above-mentioned resin can be mixed in adhesive phase.
When using Photoepolymerizationinitiater initiater, it can be used for example: cumene asioinether, isobutyl benzoin ether, hexichol first
Ketone, Michler's keton, clopenthixal ketone, dodecyl thioxanthones, dimethyl thioxanthone, diethyl thioxanthone, benzil dimethyl ketal,
Alpha-hydroxy cyclohexyl-phenyl ketone, 2- hyd roxymethyl phenyl propane etc..The use level of these Photoepolymerizationinitiater initiaters is relative to acrylic acid
100 mass parts of based copolymer preferably 0.01~5 mass parts.
(supporting member)
The opposite with the 1st face 11a for being provided with bonding agent 12 and bonding film 13 of mold release film 11 is arranged in supporting member 14
The both ends of 2nd face 11b and the short side direction for mold release film 11, and with reach in the short side direction of mold release film 11 with it is viscous
The mode for connecing the corresponding region in end of oxidant layer 12 is arranged.As it can be seen that chip is thus being processed use by setting supporting member 14
When band 10 batches as roller shape, it can make to be applied to batching pressure dispersion or it being made to concentrate on supporting member 14 for adhesive tape, therefore
It is able to suppress formation of the transfer mark on adhesive layer 12.
In addition, corresponding with the end of adhesive layer 12 in short side direction due to supporting member 14 to reach mold release film 11
The mode in region be arranged, therefore can reduce the air between adhesive layer 12 and the circular tag portion 13a of bonding film 13
(air) be involved in.I.e. since tape for processing wafer 10 is curled as roller shape, air is easy to concentrate on the short of mold release film 11
In edge direction between the mold release film 11 of the end portions of adhesive layer 12 and circular tag portion 13a.In the present application, chip adds
When work band 10 is taken up as roller shape, supporting member 14 is bonded in the short side direction that label portion 13a reaches mold release film 11
The end of oxidant layer 12, therefore tape for processing wafer 10 corresponding with the end of adhesive layer 12 in the short side direction of mold release film 11
Whole thickness only glues compared with the whole thickness of tape for processing wafer 10 corresponding with the part in the outside of adhesive layer 12
The thickness for connecing oxidant layer 12 thickens.Therefore, it can prevent air from invading the region of inside for adhesive layer 12, adhesive layer
Between 12 and the circular tag portion 13a of bonding film 13.
In addition, in the case where the 1st face 11a for being provided with bonding agent 12 and bonding film 13 forms supporting member, to bearing
There is limitation in the width of layer, in contrast, in the composition of present embodiment, can widely ensure the width of supporting member 14,
The generation of transfer trace can more effectively be inhibited.
In addition, supporting member 14 is arranged by the 2nd face 11b in mold release film 11, this makes it possible to obtain make to supporting member 14
Positional shift permissibility increase effect.
In addition, in a manner of region corresponding with the end of adhesive layer 12 in the short side direction to reach mold release film 11
Supporting member 14 is set, although being thus possible to transfer trace caused by generating supporting member 14 in the end of adhesive layer 12,
But in general, it is contemplated that be left white with being bonded for wafer W, adhesive layer 12 is bigger than wafer W, wafer W not with adhesive layer 12
End fitting, therefore there is no problem.In addition, being along de- in the case where generating transfer trace caused by supporting member 14
The longitudinal direction of mould film 11 generates, but since the longitudinal direction of mold release film 11 is direction of travel when being bonded with wafer W, i.e.,
Make to be in the case where the end bonded wafer W of adhesive layer 12, air caused by the transfer trace of supporting member 14 is also easy to
It scatters and disappears in fitting, and is not easy to remain in the interface with wafer W as hole.
The width, radical of supporting member 14 are not particularly limited in the short side direction of mold release film 11, but by supporting member 14
The total of width be set as sD, be set as the diameter of adhesive layer 12The length of the short side direction of mold release film 11 is set as L
When, preferablyMore preferable upper limit value is within 15mm, even more preferably the upper limit
Value is within 10mm.By being set asThus it batches by tape for processing wafer 10 as roller shape
When, it is however generally that, supporting member 14 is not bonded across the region that volume patch occurs for label portion 13a with wafer W in adhesive layer 12.Branch
Total sD of the width of bearing member 14 is the aggregate value of width d1, d2, d3 ... of each supporting member.In addition, each supporting member
Width D is preferably within 5mm or more and 45mm.
As the thickness of supporting member 14, preferably with circle in mold release film 11, adhesive layer 12 and bonding film 13
The comparable thickness of height difference of the peripheral portion 13b of the laminated portions and bonding film 13 of label portion 13a, i.e., it is identical as adhesive layer 12,
It or is 12 or more adhesive layer, more preferably 1.0 of adhesive layer 12 times or more and 4.0 times or less.By making supporting member
14 1.0 times or more of the thickness with adhesive layer 12 bonding film 13 and overlap its surface thus when batching adhesive tape 10
2nd face 11b of mold release film 11 contacts or is non-contiguously formed between them space, therefore the 2nd face 11b of mold release film 11
Soft adhesive layer 12 will not be pressed on strongly across bonding film 13.Therefore, transfer trace can be effectively inhibited
It generates.On the other hand, above-mentioned from there through controlling by making supporting member 14 that there are 4.0 times of thickness below of adhesive layer
The size in space makes space become excessive, and thus, it is possible to prevent from becoming easy that air is caused to invade adhesive layer 12, bonding film
13, the state of each interlayer of mold release film 11.Fig. 2 is the section view for showing the example of the supporting member 14 ' thicker than bonding agent oxidant layer 12
Figure.
Supporting member 14 can along mold release film 11 longitudinal direction discontinuously or be continuously provided, but from more effectively inhibit turn
From the perspective of the generation of mark mark, the longitudinal direction preferably along base material film 11 is continuously provided.
Supporting member 14 of the invention preferably has 300ppm/ DEG C of linear expansion coefficient below.Tape for processing wafer quilt
Be placed under the big environment of temperature change, for example, tape for processing wafer when stored, transport when it is low with -20 DEG C~5 DEG C or so holdings
Temperature state, in addition when by the adhesive layer and wafer bonding of tape for processing wafer, in order to make bonding agent heat and soften to mention
High adhesiveness carries out 70~80 DEG C or so of heating fitting etc. with hot plate.The size of supporting member 14 is sent out according to temperature change
When changing, it is possible to immerse air between mold release film 11 and bonding film 13 and between adhesive layer 12 and bonding film 13
And generate hole, generate it is bad to the fitting of chip, so as to cause the cutting action of chip later, adhesive tape expansion process with
And in the pickup process of chip, installation procedure yield rate decline.It is below linear by using 300ppm/ DEG C in the present invention
The low supporting member of the coefficient of expansion can be adequately suppressed the generation of the transfer trace on adhesive layer 12, while even if in temperature
Degree changes under big use environment, and the change in size of supporting member 13 is also few, is able to suppress the generation of hole.
In order to more effectively inhibit to transfer the generation of trace and the generation of hole, the linear expansion coefficient of supporting member 14 is excellent
150ppm/ DEG C is selected as hereinafter, more preferably 70ppm/ DEG C or less.The lower limit of linear expansion coefficient is not particularly limited, usually
0.1ppm/℃。
In addition, the difference of the linear expansion coefficient of the linear expansion coefficient and mold release film 11 of supporting member 14 is preferably
250ppm/ DEG C or less.The difference of linear expansion coefficient be greater than 250ppm/ DEG C when, due to save when and transport when low-temperature condition and
The temperature change of normal temperature state when use and generate supporting member 14 and the size of mold release film 11 is poor, therefore there are below each
Kind problem.
When (1) generating size difference due to temperature change, be possible between mold release film 11 and bonding film 13 as described above,
And hole is generated between adhesive layer 12 and bonding film 13.
(2) it when user is with the operation of roller shape, rolls up a possibility that collapsing and increases.In more detail, such as even if in manufacture, shipment
When be normally wound, customer-side when from the stored refrigerated use to room temperature and from room temperature use to it is stored refrigerated when
Also it generates a possibility that size is poor, and volume collapses and increases.
(3) gap is generated between the piece for being wound as roller shape due to size difference, foreign matter is from the mixed possibility in roller side
Property increase.
(4) when the volume number of tape for processing wafer is more, when product width is wide, when carrying out stored refrigerated since room temperature,
Roller core side is different from the cooling velocity of roller peripheral side.Therefore, caused by roller core side and roller peripheral side, line differential expansion
A possibility that supporting member 14 is different from the size of mold release film 11 difference, and the shape of whole roller changes height.
In the present invention, linear expansion coefficient refers to that the spatial expansion institute of object when changing temperature under a constant is increased
Ratio.When being set as T by temperature, the length of the solid is set as L, linear expansion coefficient α is provided by formula below.
In addition, the measurement of the linear expansion coefficient in the present invention can for example divide according to JIS K7197, the thermomechanical of plastics
The linear expansivity test method of analysis, using thermo-mechanical analysis device (TMA), installation is cut to length 15mm, width 5mm, chuck
Between distance 10mm sample, in tensile load 10g, 5 DEG C of heating rate/min, N2Under gas atmosphere, -20 DEG C of measuring temperature range~
It is measured under conditions of 50 DEG C.
In addition, supporting member 14 is preferably with respect to viscous from the viewpoint of the winding offset for preventing tape for processing wafer 10
Close the material for the coefficient of friction that film 13 has to a certain degree.Following effect can be obtained as a result: tape for processing wafer can be prevented
10 winding offset carries out high-speed wind-up, is capable of increasing and batches number.
Confficient of static friction between supporting member 14 and the base material film of bonding film 13 is preferably 0.2~2.0, more preferably
0.6~1.6.When tape for processing wafer is batched as roller shape, in the bonding film 13 that the 1st face side 11a of mold release film 11 is arranged
Peripheral portion 13a is in contact with the supporting member 14 being arranged in the 2nd face side 11b of mold release film 11, therefore, supporting member 14 and bonding
When confficient of static friction between the base material film of film 13 is less than 0.2, become to be easy to produce winding offset during fabrication, when using, from
And operability deteriorates.On the other hand, when being greater than 2.0, the resistance between the base material film and supporting member 14 of bonding film 13 is excessive, system
The operability made in process deteriorates, or causes bending to be advanced in high-speed wind-up etc..Therefore, by by static friction between the two
Coefficient is set as above range, and this makes it possible to obtain following effects: the winding offset of tape for processing wafer 10 can be prevented, it can
High-speed wind-up is carried out, is capable of increasing and batches number.
In the present invention, the confficient of static friction between supporting member 14 and the base material film of bonding film 13 can be based on JIS
K7125 is obtained by measuring method below.
It will be cut to two films of the base material film and supporting member 14 of 25mm (width) × 100mm (length) bonding film 13 respectively
Sample is overlapped, the film of fixed downside.Then, in the weight of the top for the film being laminated mounting weight 200g, as load W,
With the film on the upside of the speed tensile of 200mm/min, the power Fd (g) when skidding off is measured, finds out confficient of static friction from formula below
(μd)。
μ d=Fd/W
As supporting member 14, such as it can be suitably used and be closed in the bonding that resin film base material is coated with bonding mixture
Band.By the way that such bonding crossed belt to be pasted on to the specified position of the both ends part of the 2nd face 11b of mold release film 11, thus, it is possible to
Form the tape for processing wafer 10 of present embodiment.
As the substrate resin of bonding crossed belt, as long as meeting the range of above-mentioned linear expansion coefficient and being resistant to crimped,
It is not particularly limited, but from the viewpoint of heat resistance, flatness and easness of starting with, is preferably selected from poly terephthalic acid second
Diol ester (PET), polypropylene and high density polyethylene (HDPE).
The composition and physical property of adhesive about bonding crossed belt, are not particularly limited, as long as in tape for processing wafer 10
It is not removed from mold release film 11 in coiling process and preservation process.
In addition, the supporting member coloured can be used as supporting member 14.Structure is supported by using such coloring
Part can positively identify the type of band when batching tape for processing wafer for roller shape.It is used for example, being processed according to chip
The color that the type of band, thickness change coloring supporting member 14 can press down thus, it is possible to readily recognize the type of band, thickness
It makes, prevent artificial mistake.
In addition, the stretching storage elastic modulus Eb and 23 about the bonding film 13 under the conditions of 10,23 DEG C of tape for processing wafer
The ratio between stretching storage elastic modulus Ea of mold release film 11 under the conditions of DEG C is preferably in the range of Eb/Ea0.001~100.
The value of above-mentioned Eb/Ea is bigger, then relatively bonding film 13 is harder, mold release film 11 is more soft.On the other hand, above-mentioned
The value of Eb/Ea is smaller, then relatively bonding film 13 is softer, mold release film 11 is harder.According to the above configuration, Eb/Ea be 0.001 with
On, therefore the hardness (stretching storage elastic modulus Eb) of bonding film reaches more than centainly.Therefore, it is able to suppress and adds in composition chip
Transfer trace is generated on the adhesive layer 12 of work band 10.In addition, above-mentioned Eb/Ea is 0.001 or more, the hardness of bonding film 13
It, can be suitably by bonding more than (stretching storage elastic modulus Eb) reaches certain, therefore when being fitted in semiconductor wafer W
Film 13 and the removing of mold release film 11 (loll (ベ mouthfuls go out )).
In addition, above-mentioned Eb/Ea is 100 hereinafter, therefore the hardness (stretching storage elastic modulus Ea) of mold release film 11 reaches one
More than fixed, on the other hand, the hardness (stretching storage elastic modulus Eb) of bonding film 13 is certain following.Therefore, in adhesive layer
12 to mold release film 11 be bonded when, be able to suppress mold release film 11 generation fracture, can prevent scratch adhesive layer 12 surface or
Bubble is mixed between film.As a result, it is possible to inhibit the film of mold release film 11 to tilt, in the installation of semiconductor wafer W in adhesive layer 12
Hole is generated between semiconductor wafer W.
As it can be seen that according to the above configuration, batching to be able to suppress when roller shape and generate transfer trace in adhesive layer 12.Separately
Outside, the film for being able to suppress mold release film 11 tilts, in the installation of semiconductor wafer W adhesive layer 12 and semiconductor wafer W it
Between generate hole.
In above-mentioned composition, the thickness of mold release film 11 is preferably 10~100 μm, and the thickness of bonding film 13 is preferably 25~180 μ
m。
In addition, in above-mentioned composition, the stretching storage elastic modulus Eb of the bonding film 13 under the conditions of 23 DEG C is preferably 1~
The stretching storage elastic modulus Ea of 500MPa, the mold release film 11 under the conditions of 23 DEG C are preferably 1~5000MPa.
In addition, in above-mentioned composition preferably: the glass transition temperature of adhesive layer 12 is consolidated in the range of 0~100 DEG C
The range that storage elastic modulus is 50MPa~5000MPa of stretching under the conditions of changing first 23 DEG C.By the glass for making adhesive layer 12
Changing transition temperature is 0 DEG C or more, thus, it is possible to inhibit the viscosity of the adhesive layer 12 under B-stage state to increase, is able to maintain that good
Good operability.In addition, in cutting, it can prevent a part of adhesive layer 12 from melting occurs and make adhesive attachment in partly leading
Body chip.As a result, it is possible to maintain the good pick of semiconductor chip.On the other hand, by making glass transition temperature
100 DEG C hereinafter, thus, it is possible to prevent the decline of the mobility of adhesive layer 12.In addition, being also able to maintain that and semiconductor wafer W
Good cementability.In addition, the glass transition temperature of adhesive layer 12 refers to heat cure when adhesive layer 12 is thermohardening type
Preceding glass transition temperature.In addition, the stretching storage elastic modulus before solidification by making adhesive layer 12 under the conditions of 23 DEG C
For 50MPa or more, thus in cutting, it can prevent a part of adhesive layer 12 from melting occurs and make adhesive attachment in partly leading
Body chip.On the other hand, by making to stretch storage elastic modulus 5000MPa hereinafter, being thus also able to maintain that and semiconductor die
The good cementability of piece W, substrate.
In addition, when being set as Ta by the thickness of mold release film 11, the thickness of bonding film 13 is set as Tb, tape for processing wafer 10
Ta/Tb is preferably in the range of 0.07~2.5.
About above-mentioned Ta/Tb, for example, making mono- timing of thickness Ta of mold release film 11, value is smaller, then bonding film 13 is thicker.
According to the above configuration, Ta/Tb is 0.07 or more, therefore is laminated with the part and the part of non-laminate adhesive film 13 of bonding film 13
Height difference is certain following.Therefore, it is able to suppress the generation of transfer trace.In addition, above-mentioned Ta/Tb is 0.07 or more, bonding film 13
Thickness be thicker than the thickness of mold release film 11, therefore stress can be absorbed by the thickness of mold release film 11, be able to suppress transfer trace
Generation.In addition, the thickness that above-mentioned Ta/Tb is 0.07 or more, bonding film 13 is thicker than the thickness of mold release film 11, therefore it is being fitted in
When in semiconductor wafer W, bonding film 13 and mold release film 11 suitably can be removed into (lolling).In addition, about above-mentioned Ta/Tb,
Such as making mono- timing of thickness Tb of bonding film 13, value is smaller, then the thickness of mold release film 11 is thinner.Above-mentioned Ta/Tb be 2.5 with
Under, thus mold release film 11 with a thickness of certain following.Therefore, to the part and non-laminate adhesive film 13 for being laminated with bonding film 13
The tracing ability of partial height difference is good.In addition, above-mentioned Ta/Tb is 2.5 or less, mold release film 11 with a thickness of centainly hereinafter, therefore
Pressure when bonding film 13 is laminated to mold release film can be made to become uniformly, being mixed into for bubble can be prevented.As it can be seen that according to above-mentioned
It constitutes, tape for processing wafer 10 made of adhesive layer 12 and mold release film 11 will be stacked gradually on bonding film 13 and is batched as roller
When shape, it is able to suppress and generates transfer trace in adhesive layer 12.
In above-mentioned composition, in the T-type disbonded test under conditions of 23 ± 2 DEG C of temperature, peeling rate 300mm/min, preferably:
Peeling force F1 between adhesive layer 12 and mold release film 11 in the range of 0.025~0.075N/100mm, adhesive layer 12 with
For peeling force F2 between bonding film 13 in the range of 0.08~10N/100mm, above-mentioned F1 and above-mentioned F2 meet the pass of F1 < F2
System.
From the viewpoint of preventing relaxation, batching offset, positional shift, hole (bubble) etc., to bonding film 13,
Tape for processing wafer 10 is manufactured while adhesive layer 12, mold release film 11 apply tensile stress.As a result, tape for processing wafer 10
Exist in the either film for constituting it and is manufactured in the state of stretching overstrain.The stretching overstrain is for example -30~10
DEG C low-temperature condition under transport or for a long time save when, cause to shrink in each film.In addition, the physical property of each film is different, therefore
The degree of contraction is also different.For example, the shrinkage degree of bonding film 13 is maximum in each film, the shrinkage degree of mold release film 11 is minimum.
As a result, generating interface peel between bonding film 13 and adhesive layer 12, or the film of mold release film 11 is caused to tilt phenomenon.
It is above-mentioned to be configured to make 0.025~0.075N/100mm of peeling force F1 between adhesive layer 12 and mold release film 11
Range and make basis in the range of 0.08~10N/100mm of peeling force F2 between adhesive layer 12 and bonding film 13
On meet F1 < F2 relationship composition.As described above, bonding film is maximum, therefore by making bonding agent in contraction in each film
Peeling force F2 between layer 12 and bonding film 13 is greater than the peeling force F1 between adhesive layer 12 and mold release film 11, and thus, it is possible to press down
The contraction of the maximum bonding film 13 of shrinking percentage processed prevents interface peel between bonding film 13 and adhesive layer 12, mold release film 11
Film tilt phenomenon.In addition, part or all of adhesive layer 12 can also be prevented to be transferred to mold release film 11.
Embodiment
Then, illustrate the embodiment of the present invention, however, the present invention is not limited to these examples.
(1) mold release film
Prepare mold release film as shown below.
Mold release film A1: silicone demoulding treated the polyethylene terephthalate film of 25 μm of thickness, width 390mm
(stretching storage elastic modulus is 4070MPa, linear expansion coefficient 60ppm)
Mold release film A2: silicone demoulding treated the polyethylene terephthalate film of 100 μm of thickness, width 390mm
(stretching storage elastic modulus is 3910MPa, linear expansion coefficient 60ppm)
Mold release film A3: silicone demoulding treated the polyethylene terephthalate film of 12 μm of thickness, width 390mm
(stretching storage elastic modulus is 4020MPa, linear expansion coefficient 60ppm)
Mold release film A4: silicone demoulding treated the polyethylene terephthalate film of 38 μm of thickness, width 390mm
(stretching storage elastic modulus is 4020MPa, linear expansion coefficient 60ppm)
Mold release film A5: 25 μm of thickness, width 390mm silicone demoulding treated low density polyethylene (LDPE) (LDPE) film (draw
Stretching storage elastic modulus is 105MPa, linear expansion coefficient 230ppm)
(2) production of bonding film
<bonding film B1>
As the acrylic acid series copolymer with functional group, preparation includes 2-EHA, acrylic acid 2- hydroxyl
The ratio of ethyl ester and methacrylic acid, 2-EHA is the copolymer of 60 moles of %, matter average molecular weight 700,000.It connects
, addition methacrylic acid 2- isocyanato ethyl makes iodine number reach 20, prepares -50 DEG C of glass transition temperature, hydroxyl
The acrylic acid series copolymer (b-1) of value 10mgKOH/g, acid value 5mgKOH/g.
Relative to 100 mass parts of acrylic acid series copolymer (b-1), the Coronate L (day as polyisocyanate is added
This polyurethane system) 5 mass parts, Esacure KIP 150 (Lamberti corporation) 3 mass as Photoepolymerizationinitiater initiater are added
Part, gained mixture is dissolved in ethyl acetate, stirs, prepares adhesive composition.
Then, the adhesive is applied on the demoulding release liner that it includes polyethylene terephthalate film that treated
Composition so that after dry with a thickness of 10 μm, after 110 DEG C are 3 minutes dry, and include vinyl-vinyl acetate copolymer
The base material film (50 μm of thickness) of (Tosoh system, ウ Le ト ラ セ Application 636) is bonded, the bonding film B1 of 60 μm of thickness of production.Stretch storage
Elasticity modulus is 40MPa.
<bonding film B2>
Above-mentioned adhesive group is applied on the demoulding release liner that it includes polyethylene terephthalate film that treated
Close object so that after dry with a thickness of 5 μm, and include low density polyethylene (LDPE) (LDPE, without de- after 110 DEG C are 3 minutes dry
Mould processing) base material film (40 μm of thickness) fitting, 45 μm of thickness of bonding film B2 of production.Stretching storage elastic modulus is
105MPa。
<bonding film B3>
Above-mentioned adhesive group is applied on the demoulding release liner that it includes polyethylene terephthalate film that treated
Close object so that after dry with a thickness of 10 μm, after 110 DEG C are 3 minutes dry, and include ethylene-methyl methacrylate analog copolymer
Ionomer (three well Du Pont polymerization lengths of schooling, Ha イ ミ ラ Application 1554) base material film (150 μm of thickness) fitting, make thickness 160
μm bonding film B3.Stretching storage elastic modulus is 301MPa.
<bonding film B4>
Above-mentioned adhesive group is applied on the demoulding release liner that it includes polyethylene terephthalate film that treated
Close object so that after dry with a thickness of 10 μm, after 110 DEG C are 3 minutes dry, and include ethylene-methyl methacrylate analog copolymer
Ionomer (three well Du Pont polymerization lengths of schooling, Ha イ ミ ラ Application 1554) base material film (110 μm of thickness) fitting, make thickness 120
μm bonding film B4.Stretching storage elastic modulus is 289MPa.
<bonding film B5>
Above-mentioned adhesive group is applied on the demoulding release liner that it includes polyethylene terephthalate film that treated
Close object so that after dry with a thickness of 10 μm, after 110 DEG C are 3 minutes dry, and include Ethylene-Propylene Block Copolymer
The base material film (110 μm of thickness) of (Prime Polymer system, Prime Polypro F707W) is bonded, 120 μm of thickness of production
Bonding film B5.Stretching storage elastic modulus is 980MPa.
(3) formation of adhesive layer
<adhesive layer C1>
Including epoxy resin " YX4000 " (Mitsubishi Chemical's system, biphenyl novolac type epoxy resin, epoxide equivalent 185)
15.0 mass parts, phenolic resin " LF-6161 " (DIC system, novolac type phenolic resin, hydroxyl equivalent 118) 40.0 mass parts,
Epoxy resin " Epicoat 828 " (Mitsubishi Chemical's system, bisphenol A type epoxy resin, epoxide equivalent 190) 45.0 parts by weight, conduct
" Aerosil R972 " (Japanese Aerosil system, 0.016 μm of the average grain diameter of primary particle size) 5 mass parts of silica filler
Composition in MEK is added, be stirred, obtain uniform composition.
Be added thereto it is as the polymer containing functional group, containing from glycidyl acrylate or methyl-prop
Acrylic copolymer (weight average molecular weight 850,000, Tg20 DEG C) 66.7 mass parts of the monomeric unit of olefin(e) acid glycidyl esters,
As " KBM-802 " (SHIN-ETSU HANTOTAI's silicone system, mercaptopropyi trimethoxy silane) 0.6 mass parts of coupling agent and as solidification
" Curezol2PHZ-PW " (four countries' chemical conversion system, 2- phenyl -4, the 5- bishydroxymethyl imidazoles, 230 DEG C of decomposition temperature) of promotor
0.1 mass parts are stirred until uniformly.Then gains are filtered with 100 mesh filters, and carries out vacuum defoamation, thus
To the varnish (c-1) of adhesive composite.
The varnish (c-1) is coated on mold release film A1 with spreader, so that dry film thickness is 30 μm, at 120 DEG C dry 5
Minute, the adhesive layer C1 of 30 μm of thickness of production.
<adhesive layer C2>
Varnish (c-1) is coated on mold release film A2 with spreader, so that dry film thickness is 30 μm, it is 5 points dry at 120 DEG C
Clock, the adhesive layer C2 of 30 μm of thickness of production.
<adhesive layer C3>
Varnish (c-1) is coated on mold release film A1 with spreader, so that dry film thickness is 60 μm, it is 8 points dry at 120 DEG C
Clock, the adhesive layer C3 of 60 μm of thickness of production.Later, adhesive layer C3 is transferred to mold release film A3 from mold release film A1.
<adhesive layer C4>
Varnish (c-1) is coated on mold release film A4 with spreader, so that dry film thickness is 60 μm, it is 8 points dry at 120 DEG C
Clock prepares 2 films obtained in this way, they is laminated at 70 DEG C, thus makes 120 μm of thickness of adhesive layer C4, stripping
From one mold release film A4.
<adhesive layer C5>
Varnish (c-1) is coated on mold release film A4 with spreader, so that dry film thickness is 60 μm, it is 8 points dry at 120 DEG C
Clock, the adhesive layer C5 of 60 μm of thickness of production.
<adhesive layer C6>
Varnish (c-1) is coated on mold release film A4 with spreader, so that dry film thickness is 60 μm, it is 8 points dry at 120 DEG C
Clock, the adhesive layer C6 of 60 μm of thickness of production.Later, it is transferred from mold release film A4, obtains mold release film A5 and adhesive layer C6
Combination.
<adhesive layer C7>
With spreader by varnish (c-1) coated in demoulding on substrate A1, so that dry film thickness is 30 μm, at 120 DEG C dry 5
Minute, the adhesive layer C7 of 20 μm of thickness of production.
<adhesive layer C8>
Including epoxy resin " 1002 " (Mitsubishi Chemical's system, solid bisphenol A type epoxy resin, epoxide equivalent 600) 40 matter
Measure part, epoxy resin " 806 " (Mitsubishi Chemical's system, bisphenol f type epoxy resin, epoxide equivalent 160, specific gravity 1.20) 100 mass parts,
Curing agent " Dyhard100SF " (DEGUSSA system, dicyandiamide) 5 mass parts, silica filler " SO-C2 " (ADMAFINE (ア
De マ Off ア イ Application) system, 0.5 μm of average grain diameter) 200 mass parts and " Aerosil the R972 " (day as silica filler
This Aerosil system, 0.016 μm of the average grain diameter of primary particle size) 3 mass parts composition in MEK is added, be stirred, obtain
Uniform composition.
Phenoxy resin " PKHC " (INCHEM system, matter average molecular weight 43,000, glass transition temperature 89 is added wherein
DEG C) 100 mass parts, as coupling agent " KBM-802 " (SHIN-ETSU HANTOTAI's silicone system, mercaptopropyi trimethoxy silane) 0.6 mass parts,
And as curing accelerator " Curezol2PHZ-PW " (four countries chemical conversion system, 2- phenyl -4,5- bishydroxymethyl imidazoles, point
Solve 230 DEG C of temperature) 0.5 mass parts, it is stirred until uniformly.Then gains are filtered with 100 mesh filters, and carries out vacuum
Thus deaeration obtains the varnish (c-2) of adhesive composite.
The varnish (c-2) is coated on mold release film A4 with spreader, so that dry film thickness is 60 μm, at 120 DEG C dry 8
Minute, the adhesive layer C8 of 60 μm of thickness of production.
(4) production of supporting member
<supporting member D1>
Above-mentioned adhesive group is applied on the demoulding release liner that it includes polyethylene terephthalate film that treated
Close object so that after dry with a thickness of 5 μm, after 110 DEG C are 3 minutes dry, with comprising polyethylene terephthalate (without de-
Mould processing) resin film base material (25 μm of thickness) be bonded and transferred, production 30 μm of thickness, width 36mm supporting member
D1.Linear expansion coefficient is 60ppm.
<supporting member D2>
Above-mentioned adhesive group is applied on the demoulding release liner that it includes polyethylene terephthalate film that treated
Close object so that after dry with a thickness of 25 μm, and include polypropylene (OPP, no demoulding processing) after 110 DEG C are 3 minutes dry
Resin film base material (50 μm of thickness) is bonded and is transferred, the supporting member D2 of 75 μm of thickness of production, width 36mm.Linear expansion
Coefficient is 120ppm.
<supporting member D3>
The TW-PLT (TANIMURA system) of commercially available dustless production line adhesive tape as used in dustless room is cut as width
36mm is used as supporting member D3.Poly terephthalic acid second two with 75 μm of thickness of polyvinyl chloride layers Yu 12 μm of thickness
Resin film base material made of alcohol ester layer stackup, 142 μm of total thickness, linear expansion coefficient 80ppm.
<supporting member D4>
Above-mentioned adhesive group is applied on the demoulding release liner that it includes polyethylene terephthalate film that treated
Close object so that after dry with a thickness of 25 μm, and include low density polyethylene (LDPE) (LDPE, without de- after 110 DEG C are 3 minutes dry
Mould processing) resin film base material (50 μm of thickness) be bonded and transfer, production 75 μm of thickness, width 36mm supporting member D4.Line
Property the coefficient of expansion be 230ppm.
<supporting member D5>
Above-mentioned adhesive group is applied on the demoulding release liner that it includes polyethylene terephthalate film that treated
Close object so that after dry with a thickness of 25 μm, after 110 DEG C are 3 minutes dry, and include polyethylene terephthalate (nothing
Demoulding processing) resin film base material (50 μm of thickness) be bonded and transfer, production 75 μm of thickness, width 44mm supporting member D5.
Linear expansion coefficient is 60ppm.
<supporting member D6>
Above-mentioned adhesive group is applied on the demoulding release liner that it includes polyethylene terephthalate film that treated
Close object so that after dry with a thickness of 25 μm, after 110 DEG C are 3 minutes dry, and include polyethylene terephthalate (nothing
Demoulding processing) base material film (50 μm of thickness) be bonded and transfer, production 75 μm of thickness, width 40mm supporting member D6.Linearly
The coefficient of expansion is 60ppm.
<supporting member D7>
Above-mentioned adhesive group is applied on the demoulding release liner that it includes polyethylene terephthalate film that treated
Close object so that after dry with a thickness of 25 μm, after 110 DEG C are 3 minutes dry, and include polyethylene terephthalate (nothing
Demoulding processing) resin film base material (75 μm of thickness) be bonded and transfer, production 100 μm of thickness, width 40mm supporting member D7.
Linear expansion coefficient is 60ppm.
<supporting member D8>
Above-mentioned adhesive group is applied on the demoulding release liner that it includes polyethylene terephthalate film that treated
Close object so that after dry with a thickness of 25 μm, after 110 DEG C are 3 minutes dry, and include polyethylene terephthalate (nothing
Demoulding processing) resin film base material (75 μm of thickness) be bonded and transfer, production 100 μm of thickness, width 35mm supporting member D8.
Linear expansion coefficient is 60ppm.
(embodiment 1)
The stored refrigerated adhesive layer C1 on mold release film A1 that is formed in is restored into room temperature, to adhesive layer C1 to reach demoulding
After the mode of the penetraction depth below of the 1/2 of the thickness of film A1 is adjusted, the precut processing of circle of diameter 320mm is carried out.
Later, the unnecessary portion for removing adhesive layer C1, by bonding film B1 in a manner of contacting its adhesive phase with adhesive layer
It is laminated at room temperature with mold release film A1.Then, 1/2 penetraction depth below of the thickness of mold release film A1 is reached to bonding film B1
Mode be adjusted after, with the precut processing of circle for carrying out diameter 370mm in concentric circles with adhesive layer C1, with 15N
Tension coiling 300.Then, the face opposite with the face for being provided with adhesive layer C1 and bonding film B1 on mold release film A1,
And it is bonded supporting member D1 at the both ends of the short side direction of mold release film A1, make the tape for processing wafer of embodiment 1.With as follows
Mode is configured: the total of the width of supporting member in the short side direction of mold release film is set as sD, by the diameter of adhesive layer
It is set asWhen the length of the short side direction of mold release film is set as L, it isSupporting member reaches demoulding
Region 2mm corresponding with the end of adhesive layer in the short side direction of film.
(embodiment 2~8, comparative example 1)
According to method similarly to Example 1, with the chip processing of the combination production embodiment 2~8 of table 1 and comparative example 1
With band.In addition, supporting member reaches the amount in region corresponding with the end of adhesive layer in the short side direction of mold release film as weight
It closes A (mm) and is recorded in table 2.
[table 1]
[intrusion of air and the evaluation of the presence or absence of transfer trace]
The tape for processing wafer of embodiment and comparative example is accommodated in the bag of polyethylene, is heated seal after degassing, it will
The side plate of polypropylene is installed on both ends.Then, 2 PP belts are bound in a manner of becoming cross and carries out melting engagement.It
Afterwards, by each package body in refrigerator (5 DEG C) save 1 month after, from refrigerator take out, packaging is accommodated in together with the dry ice of plate
Case is placed in transport truck, between round-trip flat tomb~autumn fields (about 1000km).At this point, the minimum temperature of packing case is -43
DEG C, maximum temperature is 7 DEG C.Later, each package body is opened, is opened the package after reel is restored to room temperature, unlocks roller, visually
It observes air and transfers the presence or absence of trace in the presence or absence of intrusion between adhesive layer and mold release film and MD, TD all directions.It is tied
Fruit is as shown in table 2.
[inhibition of the hole after installation is evaluated]
The adhesive sheet of embodiment and comparative example is accommodated in the bag of polyethylene, is heated seal after degassing, by polypropylene
The side plate of system is installed on both ends.Then, 2 PP belts are bound in a manner of becoming cross and carries out melting engagement.It later, will be each
Package body in refrigerator (5 DEG C) save 1 month after, from refrigerator take out, packing case is accommodated in together with the dry ice of plate, is placed in
It transports and uses truck, between round-trip flat tomb~autumn fields (about 1000km).At this point, the minimum temperature of packing case is -43 DEG C, maximum temperature
It is 7 DEG C.Later, each package body is opened, is opened the package after reel is restored to room temperature, installation to semiconductor wafer.As half
Conductor chip is the chip of 12 inches, 50 μm of thickness using size.The mounting condition of semiconductor wafer is as described below.
<laminating condition>
Sticker: chip placement equipment DAM-812M (Takatori system)
Labeling rates meter: 50mm/sec
Application pressing force: 0.1MPa
Sticking temperature: 60 DEG C, 90 DEG C
Later, confirm that the binding face of tape for processing wafer and semiconductor wafer has imporosity (bubble) by microscope.Its
The results are shown in Table 2.
[table 2]
As shown in table 2, in tape for processing wafer involved in embodiment, supporting member is in the short side direction of mold release film
The both ends and mode in region corresponding with the end of adhesive layer is arranged in the short side direction for reaching mold release film, therefore
Intrusion of the air to the inside of adhesive layer is not seen.In addition, though seeing transfer caused by supporting member on the direction TD
Trace, but do not see the label trace being randomly generated in the side MD, the direction TD.In addition, though producing bearing structure on the direction TD
Transfer trace caused by part, but due to the outside for chip fit area, hole is not generated in chip fitting.
In contrast, in tape for processing wafer involved in comparative example, supporting member is in the short side direction of mold release film
The both ends and mode in region corresponding with the end of adhesive layer is arranged in the short side direction of not up to mold release film, because
Although this does not see that transfer trace, air invade the inside of adhesive layer in the direction MD, the direction TD, in chip fitting
Hole is produced in a part.
Symbol description
10: tape for processing wafer
11: mold release film
12: adhesive layer
13: bonding film
13a: circular tag portion
13b: peripheral portion
14,14 ', 14 ": supporting member
Claims (15)
1. a kind of tape for processing wafer, which is characterized in that
It includes
Long mold release film,
Adhesive layer is arranged on the 1st face of the mold release film and has defined flat shape,
Bonding film, the peripheral portion with label portion and the outside for surrounding the label portion, the label portion are described viscous to cover
It connects oxidant layer and the mode contacted around the adhesive layer with the mold release film is arranged, and there is defined planar shaped
Shape, and
2nd opposite with the 1st face for being provided with the adhesive layer and bonding film of the mold release film is arranged in supporting member
On face and be arranged in the mold release film short side direction both ends, and to reach in the short side direction of the mold release film
The mode in region corresponding with the end of the adhesive layer is arranged,
The total of width of the supporting member in the short side direction of the mold release film is set as sD, by the adhesive layer
Diameter is set asWhen the length of the short side direction of the mold release film is set as L,
2. tape for processing wafer as described in claim 1, which is characterized in that
The total of width of the supporting member in the short side direction of the mold release film is set as sD, by the adhesive layer
Diameter is set asWhen the length of the short side direction of the mold release film is set as L,
3. tape for processing wafer as claimed in claim 1 or 2, which is characterized in that
The linear expansion coefficient of the supporting member is 300ppm/ DEG C or less.
4. tape for processing wafer as claimed in claim 1 or 2, which is characterized in that
The difference of the linear expansion coefficient of the supporting member and the linear expansion coefficient of the mold release film is 250ppm/ DEG C or less.
5. tape for processing wafer as claimed in claim 1 or 2, which is characterized in that
The bonding film has adhesive phase and base material film,
Confficient of static friction between the base material film and the supporting member is 0.2~2.0.
6. tape for processing wafer as claimed in claim 1 or 2, which is characterized in that
The supporting member is continuously provided along the longitudinal direction of the mold release film.
7. tape for processing wafer as claimed in claim 1 or 2, which is characterized in that
The supporting member has the thickness of the thickness of the adhesive layer or more.
8. tape for processing wafer as claimed in claim 1 or 2, which is characterized in that
The supporting member is coloured.
9. tape for processing wafer as claimed in claim 8, which is characterized in that
The supporting member is coloured according to the type of tape for processing wafer.
10. tape for processing wafer as claimed in claim 8, which is characterized in that
The supporting member is coloured according to the thickness of tape for processing wafer.
11. tape for processing wafer as claimed in claim 1 or 2, which is characterized in that
The supporting member has 2 layers or more of stepped construction.
12. tape for processing wafer as claimed in claim 1 or 2, which is characterized in that
The supporting member is in the resin film base in polyethylene terephthalate, polypropylene and high density polyethylene (HDPE)
The bonding crossed belt of bonding mixture is coated on material.
13. tape for processing wafer as claimed in claim 1 or 2, which is characterized in that
The stretching for stretching the mold release film under the conditions of storage elastic modulus Eb and 23 DEG C of the bonding film under the conditions of 23 DEG C
The ratio between storage elastic modulus Ea Eb/Ea is 0.001~100.
14. tape for processing wafer as claimed in claim 1 or 2, which is characterized in that
The ratio between the thickness Ta of the mold release film and the thickness Tb of the bonding film Ta/Tb are 0.07~2.5.
15. tape for processing wafer as claimed in claim 1 or 2, which is characterized in that
In T-type disbonded test under conditions of 23 ± 2 DEG C of temperature, peeling rate 300mm/min,
Peeling force F1 between the adhesive layer and the mold release film is 0.025~0.075N/100mm,
Peeling force F2 between the adhesive layer and the bonding film is 0.08~10N/100mm,
F1<F2。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014246308A JP6382088B2 (en) | 2014-12-04 | 2014-12-04 | Wafer processing tape |
| JP2014-246308 | 2014-12-04 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105694748A CN105694748A (en) | 2016-06-22 |
| CN105694748B true CN105694748B (en) | 2019-07-30 |
Family
ID=56124797
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510870713.8A Active CN105694748B (en) | 2014-12-04 | 2015-12-02 | Tape for processing wafer |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6382088B2 (en) |
| KR (1) | KR101828135B1 (en) |
| CN (1) | CN105694748B (en) |
| TW (1) | TWI613716B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102238757B1 (en) * | 2019-02-26 | 2021-04-09 | 구자규 | Method for manufacturing protective film of semiconductor wafer and protective film produced thereby |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101569002A (en) * | 2007-09-14 | 2009-10-28 | 古河电气工业株式会社 | Wafer processing tape |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04360653A (en) | 1991-06-06 | 1992-12-14 | Tochigi Pref Gov | Production of egg highly containing polybasic unsaturated fatty acid of hemp seed |
| JP4360653B2 (en) * | 2007-09-14 | 2009-11-11 | 古河電気工業株式会社 | Wafer processing tape |
| JP5276063B2 (en) | 2010-07-16 | 2013-08-28 | 古河電気工業株式会社 | Sheet for semiconductor wafer dicing and die bonding |
| JP4976532B2 (en) * | 2010-09-06 | 2012-07-18 | 日東電工株式会社 | Film for semiconductor devices |
| JP4991921B2 (en) * | 2010-09-06 | 2012-08-08 | 日東電工株式会社 | Film for semiconductor device and semiconductor device |
| JP2012082285A (en) * | 2010-10-08 | 2012-04-26 | Hitachi Chemical Co Ltd | Adhesive sheet |
-
2014
- 2014-12-04 JP JP2014246308A patent/JP6382088B2/en active Active
-
2015
- 2015-12-01 TW TW104140170A patent/TWI613716B/en active
- 2015-12-02 KR KR1020150170535A patent/KR101828135B1/en active IP Right Grant
- 2015-12-02 CN CN201510870713.8A patent/CN105694748B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101569002A (en) * | 2007-09-14 | 2009-10-28 | 古河电气工业株式会社 | Wafer processing tape |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI613716B (en) | 2018-02-01 |
| JP6382088B2 (en) | 2018-08-29 |
| CN105694748A (en) | 2016-06-22 |
| KR101828135B1 (en) | 2018-02-09 |
| KR20160067754A (en) | 2016-06-14 |
| JP2016111157A (en) | 2016-06-20 |
| TW201633387A (en) | 2016-09-16 |
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