TW201633387A - Wafer processing tape - Google Patents

Abstract

The present invention provides a wafer processing tape capable of reducing the occurrence of a label trace and entangling of air between an adhesive layer and an adhesive film. The present invention has the feature that the wafer processing tape includes: a long mold releasing film (11); an adhesive layer (12) having a prescribed planar shape and provided on a first surface of the mold releasing film (11); an adhesive film (13) comprising a label part (13a) and a peripheral part (13b) surrounding the outside of the label part (13a), wherein the label part (13a) is configured to cover the adhesive layer (12) and provided in a manner of contacting with the mold releasing film (11) around the adhesive layer (12), and has the prescribed planner shape; and a support member (14) provided at both ends in a short edge direction of the mold releasing film (11) on a second surface opposite to the first surface of the mold releasing film (11), so that it overlaps the region corresponding to the end of the adhesive layer (12) in the short edge direction of the mold releasing film (11).

Description

Wafer processing tape

The present invention relates to a tape for wafer processing, and more particularly to a tape for wafer processing having two functions of a dicing tape and a die bond film.

Recently, a dicing/die bonding tape having both functions of a dicing tape and a die-bonding film (also referred to as a wafer-mounting film) which cuts and separates a semiconductor wafer (die cutting) has been developed. For fixing the semiconductor wafer for each wafer, the die bonding film is used for bonding the cut semiconductor wafer to a lead frame or a package substrate or the like, or for stacking semiconductor wafers in a stacked package, Bonding.

As such a dicing die bonding tape, pre-cut processing is performed in consideration of workability such as attachment to a wafer or mounting on a ring frame at the time of cutting.

Examples of the dicing/die bonding tape after the pre-cutting process are shown in FIGS. 4 and 5. 4 is a view showing a state in which the dicing/die bonding tape is wound into a roll shape, FIG. 5(a) is a plan view of the dicing/die bonding tape, and FIG. 5(b) is a view of FIG. 5(a). A cross-sectional view of the line BB. Cutting / The die bonding tape 50 includes a release film 51, an adhesive layer 52, and an adhesive film 53. The subsequent agent layer 52 is processed into a circular shape corresponding to the shape of the wafer, and has a circular label shape. The adhesive film 53 is a film in which the peripheral portion of the circular portion corresponding to the shape of the annular frame for cutting is removed, and has a circular label portion 53a and a peripheral portion 53b surrounding the outer side as shown in the drawing. The adhesive layer 52 is laminated in alignment with the center of the circular label portion 53a of the adhesive film 53, and the circular label portion 53a of the adhesive film 53 covers the adhesive layer 52 and is in contact with the release film 51 around it.

When the wafer is diced, the release film 51 is peeled off from the adhesive layer 52 and the adhesive film 53 in a laminated state, and as shown in FIG. 6, the back surface of the semiconductor wafer W is pasted on the adhesive layer 52, and the adhesive film 53 is bonded. The outer peripheral portion of the circular label portion 53a is bonded and fixed to the cutting annular frame R. The semiconductor wafer W is diced in this state, and thereafter, the adhesive film 53 is subjected to a curing treatment such as ultraviolet irradiation to pick up the semiconductor wafer. At this time, since the adhesive force of the adhesive film 53 is lowered by the curing treatment, it is easy to peel off from the adhesive layer 52, and the semiconductor wafer is picked up in a state in which the adhesive layer 52 is adhered to the back surface. When the semiconductor wafer is bonded to a lead frame, a package substrate, or another semiconductor wafer after the adhesive layer 52 adhered to the back surface of the semiconductor wafer, it functions as a die-bonding film.

Further, in the dicing die bonding tape 50 as described above, the portion in which the adhesive layer 52 and the circular label portion 53a of the adhesive film 53 are laminated is thicker than the peripheral portion 53b of the adhesive film 53. Therefore, when the product roll is in the form of a roll, the height difference between the laminated portion of the adhesive layer 52 and the circular label portion 53a of the adhesive film 53 and the peripheral portion 53a of the adhesive film 53 coincides with each other. A phenomenon in which the surface of the soft adhesive layer 52 is transferred with a height difference, that is, a transfer mark (also referred to as a label mark, a wrinkle or a roll) shown in FIG. Such a transfer mark is particularly remarkable when the adhesive layer 52 is formed of a soft resin or has a thickness, and when the number of turns of the dicing die bonding tape 50 is large. Further, if a transfer mark is generated, there is a possibility that a problem occurs in the processing of the wafer due to poor adhesion of the adhesive layer to the semiconductor wafer.

In order to solve such a problem, a tape for wafer processing has been developed in which the release film has a second surface opposite to the first surface on which the adhesive layer and the adhesive film are provided, and the short side of the release film Support members are provided at both ends of the direction (see, for example, Patent Document 1). Since such a wafer processing tape is provided with a support member, when the wafer processing tape is wound into a roll shape, the winding pressure applied to the tape can be dispersed or the pressure can be concentrated on the support member. The formation of the transfer blot on the adhesive layer can be suppressed.

[Previous Technical Literature] [Patent Document]

[Patent Document 1] Japanese Patent No. 4360653

However, in general, the adhesive film 53 covers the adhesive layer 52 and is in contact with the release film 51 around it, and sometimes the release film 51 is on the peripheral portion of the adhesive layer 52 due to the thickness of the adhesive layer 52. Adhesive film A slight gap is created between the 53 to leave air. The air between the release film 51 and the pressure-sensitive adhesive film 53 sometimes moves to the outside of the circular label portion 53a, and does not significantly affect the physical properties at this time.

However, when a support member having a thickness equal to or greater than the thickness of the adhesive layer is provided to prevent transfer marks as in the tape for wafer processing of Patent Document 1, the outer side of the adhesive layer becomes thicker, and thus there is a change. There is a risk that the air at the peripheral portion of the adhesive layer is easily attracted to the inside of the adhesive layer.

Accordingly, an object of the present invention is to provide a tape for wafer processing which can reduce the occurrence of label marks and can reduce the entrapment of air between the adhesive layer and the adhesive film.

In order to solve the above problems, the tape for wafer processing according to the present invention includes a long release film, and an adhesive layer provided on the first surface of the release film and having a predetermined shape. a flat shape; the adhesive film having a label portion and a peripheral portion surrounding the outer side of the label portion, wherein the label portion is provided to cover the adhesive layer and is in contact with the release film around the adhesive layer, And a predetermined planar shape; and a support member provided on the second surface of the release film opposite to the first surface on which the adhesive layer and the adhesive film are provided, and provided on the release film Both end portions in the side direction, and reaching a region corresponding to the end portion of the above-mentioned adhesive layer in the short side direction of the release film Mode setting.

Further, it is preferable that the semiconductor processing belt has a total width of the support member in the short-side direction of the release film as sD and a diameter of the adhesive layer a. When the length of the above-mentioned release film in the short side direction is L, 0 mm < [(sD + a )-L]<20mm.

Further, in the above semiconductor processing belt, it is preferable that the support member has a linear expansion coefficient of 300 ppm/° C. or less.

Further, in the semiconductor processing belt, it is preferable that a difference between a linear expansion coefficient of the support member and a linear expansion coefficient of the release film is 250 ppm/° C. or less.

Further, it is preferable that the pressure-sensitive adhesive film of the semiconductor processing belt has a pressure-sensitive adhesive layer and a base material film, and a static friction coefficient between the base material film and the support member is 0.2 to 2.0.

Further, in the above-described semiconductor processing belt, it is preferable that the support member is continuously provided along the longitudinal direction of the release film.

Further, in the above-described semiconductor processing belt, it is preferable that the support member has a thickness equal to or greater than a thickness of the adhesive layer.

Further, in the above-described semiconductor processing belt, the support member may be colored. At this time, it is preferable that the support member is colored according to the type of the tape for wafer processing. Further, it can be colored according to the thickness of the tape for wafer processing.

Further, in the above-described semiconductor processing belt, it is preferable that the support member has a laminated structure of two or more layers.

Further, the above semiconductor processing belt is preferably: the above support The member is an adhesive tape coated with a bonding agent on a resin film substrate selected from the group consisting of polyethylene terephthalate, polypropylene, and high-density polyethylene.

Further, the semiconductor processing belt preferably has a ratio Eb/Ea of the tensile storage elastic modulus Eb of the adhesive film at 23 ° C and the tensile storage elastic modulus Ea of the release film at 23 ° C. 0.001~100.

Further, in the semiconductor processing belt, the ratio Ta/Tb of the thickness Ta of the release film to the thickness Tb of the pressure-sensitive adhesive film is preferably 0.07 to 2.5.

Further, in the above-described semiconductor processing belt, it is preferable that the peeling force F1 between the adhesive layer and the release film is 0.025 to 0.075 in a T-peel test under the conditions of a temperature of 23 ± 2 ° C and a peeling speed of 300 mm / min. N/100 mm, the peeling force F2 between the above adhesive layer and the above adhesive film is 0.08 to 10 N/100 mm, and F1 < F2.

According to the present invention, it is possible to reduce the occurrence of label marks and to reduce the entrapment of air between the adhesive layer and the adhesive film.

10‧‧‧ Wafer processing tape

11‧‧‧ release film

12‧‧‧ adhesive layer

13‧‧‧Adhesive film

13a‧‧‧Circular label

13b‧‧‧ peripherals

14, 14', 14" ‧ ‧ support members

Fig. 1(a) is a plan view of a tape for wafer processing according to an embodiment of the present invention, and Fig. 1(b) is a cross-sectional view taken along line A-A of (a).

2 is a wafer processing adhesive according to another embodiment of the present invention; A sectional view of the belt.

3 is a cross-sectional view showing a tape for wafer processing according to still another embodiment of the present invention.

4 is a perspective view of a conventional tape for wafer processing.

Fig. 5(a) is a plan view of a conventional wafer processing tape, and Fig. 5(b) is a cross-sectional view taken along line B-B of (a).

6 is a cross-sectional view showing a state in which a tape for wafer processing is attached to a ring frame for cutting.

Fig. 7 is a schematic view for explaining a problem of a conventional tape for wafer processing.

Embodiments of the present invention will be described in detail below based on the drawings. Fig. 1 (a) is a plan view of a wafer processing tape (cutting/die bonding tape) according to an embodiment of the present invention, and Fig. 1 (b) is a cross-sectional view taken along line A-A of Fig. 1 (a).

As shown in FIGS. 1(a) and 1(b), the wafer processing tape 10 has a long release film 11, an adhesive layer 12, an adhesive film 13, and a support member 14.

The subsequent agent layer 12 is provided on the first surface of the release film, and has a circular label shape corresponding to the shape of the wafer. The adhesive film 13 has a circular label portion 13a and a peripheral portion 13b surrounding the outer side of the circular label portion 13a, the circular label portion 13a covering the adhesive layer 12 and the release film around the adhesive layer 12 The way the contact is set. Peripheral part 13b package The form in which the outer side of the circular label portion 13a is completely surrounded and the form that is not completely enclosed as shown in the drawing are included. The circular label portion 13a has a shape corresponding to the annular frame for cutting. Further, the support member 14 is provided on the second surface 11b of the release film 11 opposite to the first surface 11a on which the adhesive 12 and the adhesive film 13 are provided, and is provided at both ends in the short-side direction of the release film 11. The portion is provided so as to reach a region corresponding to the end portion of the adhesive layer 12 in the short side direction of the release film 11.

Hereinafter, each component of the wafer processing tape 10 of the present embodiment will be described in detail.

(release film)

As the release film 11 used in the wafer processing tape 10 of the present invention, polyester (PET, PBT, PEN, PBN, PTT), polyolefin (PP, PE), and copolymer (EVA, EEA) can be used. , EBA) and a film that partially replaces these materials to further improve the adhesion and mechanical strength. Further, it may be a laminate of these films.

The thickness of the release film is not particularly limited and can be appropriately set, and is preferably 25 to 50 μm.

(adhesive layer)

The adhesive layer 12 of the present invention is formed on the first surface 11a of the release film 11 as described above, and has a circular label shape corresponding to the shape of the wafer.

The adhesive layer 12 is attached to the back surface of the wafer after attaching and dicing the semiconductor wafer or the like, and when the wafer is picked up, as the wafer is fixed to the base. The use of an adhesive when the board or lead frame is used. As the adhesive layer 12, an adhesive agent containing at least one selected from the group consisting of an epoxy resin, an acrylic resin, and a phenol resin can be preferably used. Further, a polyimide-based resin or an anthrone-based resin may also be used. The thickness can be appropriately set, but it is preferably about 5 to 100 μm.

(adhesive film)

As described above, the adhesive film 13 of the present invention has a circular label portion 13a corresponding to the shape of the annular frame for dicing, and a peripheral portion 13b surrounding the outer side thereof. Such an adhesive film can be formed by removing a peripheral region of the circular label portion 13a from the film adhesive by a pre-cut process.

The adhesive film 13 is not particularly limited as long as it has sufficient adhesive force when the wafer is diced without peeling off the wafer, and when the wafer is picked up after dicing, it exhibits low adhesion to enable easy removal from the adhesive. For the layer peeling, for example, a film provided with a pressure-sensitive adhesive layer on the substrate film can be suitably used.

The base film of the pressure-sensitive adhesive film 13 is not particularly limited as long as it is a conventionally known film. However, when a radiation curable material is used as the pressure-sensitive adhesive layer to be described later, it is preferable to use radiation-transmitting. membrane.

For example, as a material thereof, polyethylene, polypropylene, ethylene-propylene copolymer, polybutene-1, poly-4-methylpentene-1, ethylene-vinyl acetate copolymer, ethylene-acrylic acid B can be cited. Ester copolymer, ethylene-methyl acrylate copolymer, ethylene-acrylic copolymer, ionomer, etc. α- A homopolymer or copolymer of an olefin, or a mixture thereof, a thermoplastic elastomer such as a polyurethane, a styrene-ethylene-butylene or pentene copolymer, a polyamine-polyol copolymer, and a mixture thereof. Further, the base film may be a film obtained by mixing two or more kinds of materials selected from these, or a film obtained by laminating one or more layers.

The thickness of the base film is not particularly limited and may be appropriately set, but is preferably 50 to 200 μm.

The resin used for the pressure-sensitive adhesive layer of the pressure-sensitive adhesive film 13 is not particularly limited, and a known chlorinated polypropylene resin, an acrylic resin, a polyester resin, a polyurethane resin, an epoxy resin, or the like which is used for the pressure-sensitive adhesive can be used. .

Preferably, an acrylic pressure-sensitive adhesive, a radiation polymerizable compound, a photopolymerization initiator, a curing agent, or the like is appropriately blended in the resin of the pressure-sensitive adhesive layer 13 to prepare a pressure-sensitive adhesive. The thickness of the pressure-sensitive adhesive layer 13 can be appropriately set without particular limitation, but is preferably 5 to 30 μm.

After the radiation-polymerizable compound is blended in the pressure-sensitive adhesive layer, it can be easily peeled off from the adhesive layer by radiation curing. As the radiation polymerizable compound, for example, a low molecular weight compound having at least two photopolymerizable carbon-carbon double bonds in the molecule which can be three-dimensionally networked by light irradiation can be used.

Specifically, it can be applied: trimethylolpropane triacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxy pentaacrylate, dipentaerythritol hexaacrylate, 1,4-butane Alcohol II Acrylate, 1,6-hexanediol diacrylate, polyethylene glycol diacrylate, oligoester acrylate, and the like.

Further, in addition to the acrylate-based compound as described above, a urethane acrylate-based oligomer may also be used. The urethane acrylate-based oligomer may be a polyvalent alcohol compound such as a polyester or a polyether, and a polyvalent isocyanate compound (for example, 2,4-toluene diisocyanate, 2,6-toluene diisocyanate, 1 , 3-xylylene diisocyanate, 1,4-xylylene diisocyanate, diphenylmethane 4,4-diisocyanate, etc.) to obtain a terminal isocyanate urethane prepolymer, and then the end An isocyanate urethane prepolymer and an acrylate or methacrylate having a hydroxyl group (for example, 2-hydroxyethyl acrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl acrylate, 2-methacrylic acid 2- It is obtained by reacting hydroxypropyl ester, polyethylene glycol acrylate, polyethylene glycol methacrylate or the like.

Two or more types selected from the above resins may be mixed in the pressure-sensitive adhesive layer.

When a photopolymerization initiator is used, for example, isopropyl benzoin ether, isobutyl benzoin ether, benzophenone, Michler's ketone, chlorothioxanthone, dodecyl thioxanthone (dodecyl) may be used. Thioxanthone), dimethyl thioxanthone, diethyl thioxanthone, benzyldimethylketal, α-hydroxycyclohexyl phenyl ketone, 2-hydroxymethyl Phenylpropane and the like. The amount of the photopolymerization initiator to be added is preferably 0.01 to 5 parts by mass based on 100 parts by mass of the acrylic copolymer.

(support member)

The support member 14 is provided on the second surface 11b of the release film 11 opposite to the first surface 11a on which the adhesive 12 and the adhesive film 13 are provided, and is both end portions in the short-side direction of the release film 11, and The region corresponding to the end portion of the adhesive layer 12 in the short side direction of the release film 11 is provided. It can be seen that when the support member 14 is provided, when the wafer processing tape 10 is wound into a roll shape, the winding pressure applied to the tape can be dispersed or concentrated on the support member 14, so that the rotation can be suppressed. The imprinting is formed on the adhesive layer 12.

In addition, since the support member 14 is disposed so as to reach a region corresponding to the end portion of the adhesive layer 12 in the short-side direction of the release film 11, the circular label on the adhesive layer 12 and the adhesive film 13 can be reduced. The entrainment of air between the portions 13a. That is, since the wafer processing tape 10 is curled into a roll shape, air is easily concentrated between the release film 11 and the circular label portion 13a in the short-side direction of the release film 11 in the peripheral edge of the adhesive layer 12. . In the invention of the present invention, when the wafer processing tape 10 is wound into a roll shape, the support member 14 reaches the end portion of the adhesive layer 12 in the short-side direction of the release film 11 via the label portion 13a, and thus the release film The thickness of the entire wafer processing tape 10 corresponding to the end portion of the adhesive layer 12 in the short-side direction of 11 is larger than the thickness of the entire wafer processing tape 10 corresponding to the outer portion of the adhesive layer 12. Only the thickness of the adhesive layer 12 is thickened. Therefore, it is possible to prevent air from intruding between the adhesive layer 12 in the region inside the adhesive layer 12 and the circular label portion 13a of the adhesive film 13.

Further, when the support member is formed on the first surface 11a on which the adhesive 12 and the adhesive film 13 are provided, the width of the support layer is limited, whereas the configuration of the present embodiment can securely support the support. The width of the member 14 can more effectively suppress the generation of transfer marks.

Further, by providing the support member 14 on the second surface 11b of the release film 11, an effect of increasing the allowable displacement of the position of the support member 14 can be obtained.

Further, the support member 14 is provided in such a manner as to reach a region corresponding to the end portion of the adhesive layer 12 in the short-side direction of the release film 11, whereby it is possible to produce the support member 14 at the end portion of the adhesive layer 12 However, in general, in consideration of the adhesion to the wafer W, the adhesive layer 12 is larger than the wafer W, and the wafer W does not adhere to the end portion of the adhesive layer 12, so There is a problem. Further, in the case where the transfer mark due to the support member 14 is generated, it is generated along the longitudinal direction of the release film 11, but the longitudinal direction of the release film 11 is the progress when it is bonded to the wafer W. In the case of the wafer W, even if the wafer W is bonded to the end of the adhesive layer 12, the air caused by the transfer marks of the support member 14 is easily lost during the bonding, and is not easily left as a void in the wafer. W interface.

The width and the number of the support members 14 in the short-side direction of the release film 11 are not particularly limited, but the total width of the support members 14 is sD, and the diameter of the adhesive layer 12 is set to a. When the length of the release film 11 in the short-side direction is L, it is preferably 0 mm < [(sD + a - L] < 20 mm, more preferably the upper limit is 15 mm or less, and still more preferably the upper limit is 10 mm or less. By setting to [(sD+a When -L] is less than 20 mm, when the wafer processing tape 10 is wound into a roll shape, generally, the region where the support member 14 is wound around the label portion 13a in the adhesive layer 12 is not bonded to the crystal. Round W fits. The total width sD of the support members 14 is the width d1, d2, d3 of each support member. . . Total value. Further, the width D of each of the support members is preferably 5 mm or more and 45 mm or less.

The thickness of the support member 14 is preferably a thickness corresponding to the height difference between the laminated portion of the adhesive layer 12 on the release film 11 and the circular label portion 13a of the adhesive film 13 and the peripheral portion 13b of the adhesive film 13. That is, it is the same as the adhesive layer 12, or is the adhesive layer 12 or more, and more preferably 1.0 times or more and 4.0 times or less of the adhesive layer 12. By making the support member 14 have a thickness of 1.0 times or more of the adhesive layer 12, the adhesive film 13 comes into contact with or does not contact the second face 11b of the release film 11 which is superposed on the surface thereof when the tape 10 is taken up. Since a space is formed between them, the second surface 11b of the release film 11 is strongly pressed against the soft adhesive layer 12 without interposing the adhesive film 13. Therefore, the generation of the transfer mark can be effectively suppressed. On the other hand, by making the support member 14 have a thickness of 4.0 times or less of the adhesive layer, the space is made too large by controlling the size of the above-described space, whereby it is possible to prevent air from intruding into the adhesive layer 12 easily. The state between the respective layers of the adhesive film 13 and the release film 11. Fig. 2 is a cross-sectional view showing an example of a support member 14' thicker than the adhesive agent layer 12.

The support member 14 may be intermittently or continuously provided along the longitudinal direction of the release film 11, but from the viewpoint of more effectively suppressing the generation of transfer marks, it is preferably provided continuously along the longitudinal direction of the base film 11.

The support member 14 of the present invention preferably has a linear expansion coefficient of 300 ppm/° C. or less. The wafer processing tape is placed in an environment with a large temperature change. For example, the wafer processing tape is kept at a low temperature of -20 ° C to 5 ° C during storage, and is used as an adhesive for the wafer processing tape. When the layer is bonded to the wafer, in order to improve the adhesion by heating and softening the adhesive, heat bonding is performed at 70 to 80 ° C using a hot plate. When the size of the support member 14 changes according to a change in temperature, there is a possibility that air is immersed between the release film 11 and the adhesive film 13 and between the adhesive layer 12 and the adhesive film 13 to generate voids, and the wafer is generated. The poor fit is caused by the subsequent wafer cutting process, the tape expansion process, and the wafer picking process and the drop in yield in the mounting process. In the present invention, by using a support member having a linear expansion coefficient of 300 ppm/° C. or less, the generation of transfer marks on the adhesive layer 12 can be sufficiently suppressed, and the support member 13 can be sufficiently used even in a use environment in which the temperature changes greatly. The dimensional change is also small, and the generation of pores can be suppressed.

In order to more effectively suppress the generation of transfer marks and the generation of voids, the linear expansion coefficient of the support member 14 is preferably 150 ppm/° C. or less, more preferably 70 ppm/° C. or less. The lower limit of the linear expansion coefficient is not particularly limited and is usually 0.1 ppm/°C.

Further, the difference between the linear expansion coefficient of the support member 14 and the linear expansion coefficient of the release film 11 is preferably 250 ppm/° C. or less. When the difference between the linear expansion coefficients is more than 250 ppm/° C., the dimensional difference between the support member 14 and the release film 11 occurs due to the temperature change during storage and the low temperature state during transportation and the normal temperature state during use, and thus various problems are as follows.

(1) When a dimensional difference occurs due to a temperature change, as described above, voids may be generated between the release film 11 and the adhesive film 13, and between the adhesive layer 12 and the adhesive film 13.

(2) When the user operates in a roller shape, the possibility of a roll collapse increases. In more detail, for example, even if the winding is normally performed at the time of manufacture or shipment, the user has a dimensional difference in the case of storage from refrigerating to normal temperature use, and from normal temperature use to refrigerating storage, and the possibility of roll collapse increases.

(3) A gap is formed between the sheets wound in a roll shape due to the difference in size, and the possibility that foreign matter is mixed in from the side surface of the roll increases.

(4) When the number of rolls of the wafer processing tape is large and the product width is wide, the cooling rate of the roll core side and the roll outer peripheral side is different when the storage is performed from the normal temperature. Therefore, the difference in size between the support member 14 and the release film 11 due to the difference in linear expansion between the core side of the roll and the outer peripheral side of the roll is high, and the shape of the entire roll is highly likely to change.

In the present invention, the coefficient of linear expansion refers to a ratio at which the spatial expansion of the object increases when the temperature is changed under a constant pressure. When the temperature is T and the length of the solid is L, the linear expansion coefficient α is given by the following formula.

α=(1/L). ( L/ T)

Further, the linear expansion coefficient in the present invention can be measured, for example, according to JIS K7197, a linear expansion rate test method for thermomechanical analysis of plastics, using a thermomechanical analysis device (TMA), and is cut into a length of 15 mm, a width of 5 mm, and a chuck. The sample having a distance of 10 mm was measured under the conditions of a tensile load of 10 g, a temperature increase rate of 5 ° C/min, a N ₂ gas atmosphere, and a measurement temperature range of -20 ° C to 50 ° C.

Moreover, it is preferable that the support member 14 has a material having a certain coefficient of friction with respect to the adhesive film 13 from the viewpoint of preventing the winding offset of the wafer processing tape 10 . Thereby, it is possible to obtain an effect that the winding offset of the wafer processing tape 10 can be prevented, high-speed winding can be performed, and the number of windings can be increased.

The coefficient of static friction between the support member 14 and the base film of the adhesive film 13 is preferably 0.2 to 2.0, and more preferably 0.6 to 1.6. When the wafer processing tape is wound into a roll shape, the peripheral portion 13a of the adhesive film 13 provided on the first surface 11a side of the release film 11 and the support provided on the second surface 11b side of the release film 11 are provided. Since the member 14 is in contact with each other, when the coefficient of static friction between the support member 14 and the base film of the adhesive film 13 is less than 0.2, the winding deviation is likely to occur at the time of manufacture and use, and the workability is deteriorated. On the other hand, when it is more than 2.0, the resistance between the base film of the adhesive film 13 and the support member 14 is excessively large, the workability in the manufacturing process is deteriorated, or the bending progress is caused at the time of high-speed winding. Therefore, by setting the static friction coefficient between the two to the above range, it is possible to obtain an effect that the winding of the wafer processing tape 10 can be prevented from being shifted, and high-speed winding can be performed, and the number of windings can be increased.

In the present invention, the static friction coefficient between the support member 14 and the base film of the adhesive film 13 can be obtained by the following measurement method based on JIS K7125.

The base film of the adhesive film 13 cut into 25 mm (width) × 100 mm (length), respectively, is overlapped with the two film samples of the support member 14, and the lower side is fixed. membrane. Next, a weight of 200 g was placed on top of the laminated film, and the upper film was stretched at a speed of 200 mm/min as a load W, and the force Fd (g) at the time of slipping was measured, and the following formula was used. Static friction coefficient (μd).

Dd=Fd/W

As the support member 14, for example, an adhesive tape to which a resin film substrate is coated with an adhesive can be suitably used. By attaching such an adhesive tape to a predetermined position of both end portions of the second surface 11b of the release film 11, the wafer processing tape 10 of the present embodiment can be formed.

The base resin to which the tape is bonded is not particularly limited as long as it satisfies the range of the linear expansion coefficient and can withstand the rolling, but is preferably selected from the viewpoints of heat resistance, smoothness, and ease of handling. Ethylene terephthalate (PET), polypropylene and high density polyethylene.

The composition and physical properties of the adhesive to which the tape is bonded are not particularly limited, and may be removed from the release film 11 during the winding process and the storage procedure of the wafer processing tape 10 .

Further, as the support member 14, a colored support member can be used. By using such a colored support member, when the wafer processing tape is wound into a roll shape, the type of the tape can be clearly recognized. For example, the color of the coloring support member 14 can be changed according to the type and thickness of the tape for wafer processing, whereby the type and thickness of the tape can be easily recognized, and human error can be suppressed and prevented.

In addition, regarding the wafer processing tape 10, at 23 ° C The ratio of the tensile storage elastic modulus Eb of the adhesive film 13 to the tensile storage elastic modulus Ea of the release film 11 at 23 ° C is preferably in the range of Eb/Ea 0.001 to 100.

The larger the value of Eb/Ea is, the harder the adhesive film 13 is and the softer the release film 11 is. On the other hand, the smaller the value of Eb/Ea is, the softer the adhesive film 13 is and the harder the release film 11 is. According to the above configuration, since Eb/Ea is 0.001 or more, the hardness (tensile storage elastic modulus Eb) of the adhesive film is at least a certain value. Therefore, it is possible to suppress occurrence of transfer marks on the adhesive layer 12 constituting the wafer processing tape 10. In addition, when the Eb/Ea is 0.001 or more and the hardness (tensile storage elastic modulus Eb) of the adhesive film 13 is at least a certain value, the adhesive film 13 can be appropriately bonded to the semiconductor wafer W. The release film 11 is peeled off (stretched tongue).

In addition, since the Eb/Ea is 100 or less, the hardness (tensile storage elastic modulus Ea) of the release film 11 is at least a certain value, and the hardness (tensile storage elastic modulus Eb) of the adhesive film 13 is Certainly below. Therefore, when the adhesive layer 12 is bonded to the release film 11, the release film 11 can be prevented from being broken, and the surface of the adhesive layer 12 or the bubbles can be prevented from being mixed between the films. As a result, it is possible to suppress the film lift of the release film 11 and to generate voids between the adhesive layer 12 and the semiconductor wafer W at the time of mounting the semiconductor wafer W.

According to the above configuration, it is possible to suppress occurrence of a transfer mark on the adhesive layer 12 when the winding is performed in a roll shape. Further, it is possible to suppress the film lift of the release film 11 and the adhesive layer at the time of mounting the semiconductor wafer W. A void is created between the 12 and the semiconductor wafer W.

In the above configuration, the thickness of the release film 11 is preferably 10 to 100 μm, and the thickness of the adhesive film 13 is preferably 25 to 180 μm.

Further, in the above configuration, the tensile storage elastic modulus Eb of the adhesive film 13 at 23 ° C is preferably 1 to 500 MPa, and the tensile storage elastic modulus Ea of the release film 11 at 23 ° C is preferably 1 to ≥ 5000MPa.

Further, in the above configuration, it is preferable that the glass transition temperature of the adhesive layer 12 is in the range of 0 to 100 ° C, and the tensile storage elastic modulus at 23 ° C before curing is in the range of 50 MPa to 5000 MPa. By setting the glass transition temperature of the adhesive layer 12 to 0° C. or more, it is possible to suppress an increase in the viscosity of the adhesive layer 12 in the B-stage state, and it is possible to maintain good workability. Further, at the time of dicing, it is possible to prevent a part of the adhesive layer 12 from being melted and to adhere the adhesive to the semiconductor wafer. As a result, good pickup of the semiconductor wafer can be maintained. On the other hand, by setting the glass transition temperature to 100 ° C or lower, it is possible to prevent a decrease in fluidity of the adhesive layer 12 . In addition, good adhesion to the semiconductor wafer W can be maintained. Further, when the adhesive layer 12 is of a thermosetting type, the glass transition temperature of the adhesive layer 12 means a glass transition temperature before thermal curing. Further, by setting the tensile storage elastic modulus at 23 ° C before curing of the adhesive layer 12 to 50 MPa or more, it is possible to prevent a part of the adhesive layer 12 from being melted and to adhere the adhesive to the semiconductor wafer at the time of dicing. . On the other hand, by setting the tensile storage elastic modulus to 5000 MPa or less, it is possible to maintain good adhesion to the semiconductor wafer W and the substrate.

Further, the thickness of the release film 11 is set to Ta, and the adhesive film is used. When the thickness of 13 is Tb, the Ta/Tb of the wafer processing tape 10 is preferably in the range of 0.07 to 2.5.

In the above Ta/Tb, for example, when the thickness Ta of the release film 11 is constant, the smaller the value, the thicker the adhesive film 13. According to the above configuration, since Ta/Tb is 0.07 or more, the height difference between the portion where the adhesive film 13 is laminated and the portion where the adhesive film 13 is not laminated is not more than a certain value. Therefore, generation of transfer marks can be suppressed. In addition, since the Ta/Tb is 0.07 or more and the thickness of the adhesive film 13 is thicker than the thickness of the release film 11, the thickness of the release film 11 can absorb stress, and generation of transfer marks can be suppressed. In addition, since the Ta/Tb is 0.07 or more and the thickness of the adhesive film 13 is thicker than the thickness of the release film 11, when the semiconductor wafer W is bonded to the semiconductor wafer W, the adhesive film 13 and the release film 11 can be appropriately formed. Peel off (expose the tongue). In the above-mentioned Ta/Tb, for example, when the thickness Tb of the adhesive film 13 is constant, the smaller the value, the thinner the thickness of the release film 11. Since the Ta/Tb is 2.5 or less, the thickness of the release film 11 is not more than a certain value. Therefore, the followability of the height difference between the portion in which the adhesive film 13 is laminated and the portion in which the adhesive film 13 is not laminated is good. In addition, since the Ta/Tb is 2.5 or less and the thickness of the release film 11 is not more than a certain value, the pressure at the time of laminating the adhesive film 13 to the release film can be made uniform, and the incorporation of air bubbles can be prevented. In the above-described configuration, when the wafer processing tape 10 in which the adhesive layer 12 and the release film 11 are laminated in this order on the adhesive film 13 is wound into a roll shape, it is possible to suppress the occurrence of the transfer in the adhesive layer 12. Printed traces.

In the above configuration, in the T-peel test under the conditions of a temperature of 23 ± 2 ° C and a peeling speed of 300 mm / min, it is preferable that the adhesive layer 12 and The peeling force F1 between the release films 11 is in the range of 0.025 to 0.075 N/100 mm, and the peeling force F2 between the adhesive layer 12 and the adhesive film 13 is in the range of 0.08 to 10 N/100 mm, the above F1 and the above F2 satisfies the relationship of F1 < F2.

Wafer processing is performed while applying tensile tension to the adhesive film 13, the adhesive layer 12, and the release film 11 from the viewpoint of preventing slack, winding offset, positional deviation, pores (bubbles), and the like. Use tape 10. As a result, the wafer processing tape 10 is manufactured in a state in which tensile residual strain exists in any of the films constituting the wafer. This tensile residual strain causes shrinkage in each film, for example, when it is transported at a low temperature of -30 to 10 ° C or stored for a long period of time. Further, since the physical properties of the respective films are different, the degree of shrinkage also differs. For example, in each film, the degree of shrinkage of the adhesive film 13 is the largest, and the degree of shrinkage of the release film 11 is the smallest. As a result, interfacial peeling occurs between the adhesive film 13 and the adhesive layer 12, or the film lift-up phenomenon of the release film 11 is caused.

In the above configuration, the peeling force F1 between the adhesive layer 12 and the release film 11 is in the range of 0.025 to 0.075 N/100 mm, and the peeling force F2 between the adhesive layer 12 and the adhesive film 13 is 0.08. A configuration in which the relationship of F1 < F2 is satisfied in the range of 10 N/100 mm. As described above, in the shrinkage in each film, the adhesive film is the largest, and therefore the peeling force F2 between the adhesive layer 12 and the adhesive film 13 is made larger than the peeling force F1 between the adhesive layer 12 and the release film 11. Thereby, shrinkage of the adhesive film 13 having the largest shrinkage rate can be suppressed, and the interface peeling between the adhesive film 13 and the adhesive layer 12 and the film lift-up phenomenon of the release film 11 can be prevented. In addition, it can also prevent Some or all of the adhesive layer 12 is transferred to the release film 11.

[Examples]

Next, embodiments of the invention will be described, but the invention is not limited to the embodiments.

(1) release film

Prepare the release film shown below.

Release film A1: Polyethylene terephthalate film after release treatment of anthrone with a thickness of 25 μm and a width of 390 mm (tensile storage elastic modulus: 4070 MPa, linear expansion coefficient: 60 ppm)

Release film A2: Polyethylene terephthalate film after release treatment of anthrone (100 μm thick) and width 390 mm (tensile storage elastic modulus: 3910 MPa, linear expansion coefficient: 60 ppm)

Release film A3: Polyethylene terephthalate film after release treatment of anthrone with a thickness of 12 μm and a width of 390 mm (tensile storage elastic modulus: 4020 MPa, linear expansion coefficient: 60 ppm)

Release film A4: Polyethylene terephthalate film after release treatment of anthrone with a thickness of 38 μm and a width of 390 mm (tensile storage elastic modulus: 4020 MPa, linear expansion coefficient: 60 ppm)

Release film A5: Low density polyethylene (LDPE) film after release treatment of an anthrone of a thickness of 25 μm and a width of 390 mm (tensile storage elastic modulus: 105 MPa, linear expansion coefficient: 230 ppm)

(2) Production of adhesive film <Adhesive film B1>

As the acrylic copolymer having a functional group, a ratio of 2-ethylhexyl acrylate, 2-hydroxyethyl acrylate and methacrylic acid, and 2-ethylhexyl acrylate was 60 mol%, and the mass average molecular weight was 700,000. Copolymer. Next, 2-isocyanatoethyl methacrylate was added to have an iodine value of 20, and an acrylic copolymer (b-1) having a glass transition temperature of -50 ° C, a hydroxyl value of 10 mgKOH/g, and an acid value of 5 mgKOH/g was prepared. .

5 parts by mass of Coronate L (manufactured by Nippon Polyurethane Co., Ltd.) as a polyisocyanate, and 3 parts by mass of Esacure KIP 150 (manufactured by Lamberti Co., Ltd.) as a photopolymerization initiator were added to 100 parts by mass of the acrylic copolymer (b-1). The resulting mixture was dissolved in ethyl acetate and stirred to prepare an adhesive composition.

Next, the pressure-sensitive adhesive composition was applied onto a release liner containing a polyethylene terephthalate film after the release treatment so that the thickness after drying was 10 μm, dried at 110 ° C for 3 minutes, and then contained. A base film (thickness: 50 μm) of an ethylene-vinyl acetate copolymer (U.S.A., Ultrathene 636) was bonded to each other to prepare an adhesive film B1 having a thickness of 60 μm. The tensile storage elastic modulus was 40 MPa.

<Adhesive film B2>

The above-mentioned pressure-sensitive adhesive composition was applied onto a release liner comprising a polyethylene terephthalate film after the release treatment so that the thickness after drying was 5 μm, and after drying at 110 ° C for 3 minutes, and containing a low density Polyethylene A base film (thickness: 40 μm) of (LDPE, which has not been subjected to mold release treatment) was bonded to each other to form an adhesive film B2 having a thickness of 45 μm. The tensile storage elastic modulus was 105 MPa.

<Adhesive film B3>

The above-mentioned pressure-sensitive adhesive composition was applied onto a release liner containing a polyethylene terephthalate film after the release treatment so that the thickness after drying was 10 μm, and after drying at 110 ° C for 3 minutes, and containing ethylene - A base film (thickness: 150 μm) of an ionomer of a methacrylic copolymer (manufactured by Mitsui DuPont Polymer Chemical Co., Ltd., HIMILAN 1554) was bonded to each other to prepare an adhesive film B3 having a thickness of 160 μm. The tensile storage elastic modulus was 301 MPa.

<Adhesive film B4>

The above-mentioned pressure-sensitive adhesive composition was applied onto a release liner containing a polyethylene terephthalate film after the release treatment so that the thickness after drying was 10 μm, and after drying at 110 ° C for 3 minutes, and containing ethylene - A base film (thickness: 110 μm) of an ionomer of a methacrylic copolymer (manufactured by Mitsui DuPont Polymer Chemical Co., Ltd., HIMILAN 1554) was bonded to each other to prepare an adhesive film B4 having a thickness of 120 μm. The tensile storage elastic modulus was 289 MPa.

<Adhesive film B5>

The above-mentioned pressure-sensitive adhesive composition was applied onto a release liner containing a polyethylene terephthalate film after the release treatment so that the thickness after drying was 10 μm, and after drying at 110 ° C for 3 minutes, and containing ethylene - Propylene block A base film (thickness: 110 μm) of a polymer (Prime Polypro F707W, manufactured by Prime Polymer) was bonded to each other to prepare an adhesive film B5 having a thickness of 120 μm. The tensile storage elastic modulus was 980 MPa.

(3) Formation of an adhesive layer <Binder layer C1>

15.0 parts by mass of epoxy resin "YX4000" (manufactured by Mitsubishi Chemical Corporation, biphenyl novolac type epoxy resin, epoxy equivalent 185) and phenolic resin "LF-6161" (DIC system, novolac type phenolic resin, hydroxyl equivalent) 118) 40.0 parts by mass of epoxy resin "Epicoat 828" (manufactured by Mitsubishi Chemical Corporation, bisphenol A type epoxy resin, epoxy equivalent 190) 45.0 parts by weight, "Aerosil R972" as a ceria filler (manufactured by Nippon Aerosil, MEK was added to the composition of 5 parts by mass of the primary particle diameter of 0.016 μm), and the mixture was stirred and mixed to obtain a uniform composition.

An acrylic copolymer (weight average molecular weight: 850,000, Tg 20 ° C) containing 6 to 100 parts of a monomer unit containing glycidyl acrylate or glycidyl methacrylate as a polymer containing a functional group was added thereto as an even "Kurezol 2PHZ-PW" (Curezol 2PHZ-PW), which is a curing accelerator, "KBM-802" (manufactured by Shin-Etsurone, decylpropyltrimethoxydecane), and 2-phenyl-4 , 5-dihydroxymethylimidazole, decomposition temperature 230 ° C) 0.1 parts by mass, stirred and mixed until homogeneous. Then, the resultant was filtered with a 100-mesh screening procedure, and subjected to vacuum defoaming, whereby a varnish (c-1) of the adhesive composition was obtained.

Applying the varnish (c-1) to the release film A1 with an applicator The film thickness was 30 μm, and the film was dried at 120 ° C for 5 minutes to prepare an adhesive layer C1 having a thickness of 30 μm.

<Binder layer C2>

The varnish (c-1) was applied onto the release film A2 by an applicator so that the dried film thickness was 30 μm, and dried at 120 ° C for 5 minutes to prepare an adhesive layer C2 having a thickness of 30 μm.

<Binder layer C3>

The varnish (c-1) was applied onto the release film A1 by an applicator so that the dried film thickness was 60 μm, and dried at 120 ° C for 8 minutes to prepare an adhesive layer C3 having a thickness of 60 μm. Thereafter, the adhesive layer C3 is transferred from the release film A1 to the release film A3.

<Binder layer C4>

The varnish (c-1) was applied onto the release film A4 by an applicator so that the dried film thickness was 60 μm, and dried at 120 ° C for 8 minutes, and two of the films thus obtained were prepared, and they were laminated at 70 ° C. Thus, an adhesive layer C4 having a thickness of 120 μm was formed, and one release film A4 was peeled off.

<Binder layer C5>

The varnish (c-1) was applied onto the release film A4 by an applicator so that the dried film thickness was 60 μm, and dried at 120 ° C for 8 minutes to prepare an adhesive layer C5 having a thickness of 60 μm.

<Binder layer C6>

The varnish (c-1) was applied onto the release film A4 by an applicator so that the dried film thickness was 60 μm, and dried at 120 ° C for 8 minutes to prepare an adhesive layer C6 having a thickness of 60 μm. Thereafter, the film was transferred from the release film A4 to obtain a combination of the release film A5 and the adhesive layer C6.

<Binder layer C7>

The varnish (c-1) was applied onto the release substrate A1 by an applicator so that the dried film thickness was 30 μm, and dried at 120 ° C for 5 minutes to prepare an adhesive layer C7 having a thickness of 20 μm.

<Binder layer C8>

40 parts by mass of epoxy resin "1002" (manufactured by Mitsubishi Chemical Corporation, solid bisphenol A epoxy resin, epoxy equivalent 600) and epoxy resin "806" (manufactured by Mitsubishi Chemical Corporation, bisphenol F epoxy resin, Epoxy equivalent of 160, specific gravity of 1.20), 100 parts by mass, curing agent "Dyhard 100SF" (manufactured by DEGUSSA, dicyandiamide), 5 parts by mass, cerium oxide filler "SO-C2" (manufactured by ADMAFINE, average particle diameter: 0.5 μm), 200 mass And MEK was added to the composition of 3 parts by mass of "Aerosil R972" (manufactured by Aerosil, Japan, average particle diameter of primary particle diameter: 0.016 μm) as a cerium oxide filler, and the mixture was stirred and mixed to obtain a uniform composition.

A phenoxy resin "PKHC" (manufactured by INCHEM, mass average molecular weight 43,000, glass transition temperature: 89 ° C) was added in an amount of 100 parts by mass. "Kurezol 2PHZ-PW" (Curezol 2PHZ-PW) which is a curing accelerator of "KBM-802" (manufactured by Shin-Etsurone, decylpropyltrimethoxydecane), and 2-phenyl group -4,5-Dihydroxymethylimidazole, decomposition temperature 230 ° C) 0.5 parts by mass, stirred and mixed until homogeneous. Then, the resultant was filtered with a 100-mesh screening procedure, and subjected to vacuum defoaming, whereby a varnish (c-2) of the adhesive composition was obtained.

This varnish (c-2) was applied onto the release film A4 with an applicator so that the dried film thickness was 60 μm, and dried at 120 ° C for 8 minutes to prepare an adhesive layer C8 having a thickness of 60 μm.

(4) Production of supporting members <Support member D1>

The pressure-sensitive adhesive composition was applied onto a release liner comprising a polyethylene terephthalate film after the release treatment so that the thickness after drying was 5 μm, and after drying at 110 ° C for 3 minutes, A resin film substrate (thickness: 25 μm) of ethylene phthalate (without release treatment) was attached and transferred, and a support member D1 having a thickness of 30 μm and a width of 36 mm was produced. The coefficient of linear expansion is 60 ppm.

<support member D2>

The above-mentioned pressure-sensitive adhesive composition was applied onto a release liner containing a polyethylene terephthalate film after the release treatment so that the thickness after drying was 25 μm, and after drying at 110 ° C for 3 minutes, the polypropylene was contained. (OPP, no release treatment) resin film substrate (thickness 50 μm) was attached and transferred A support member D2 having a thickness of 75 μm and a width of 36 mm was produced by printing. The coefficient of linear expansion is 120 ppm.

<support member D3>

TW-PLT (manufactured by TANIMURA), which is a commercially available dust-free production line tape for a clean room, was cut into a width of 36 mm and used as a support member D3. A resin film substrate having a polyvinyl chloride layer having a thickness of 75 μm and a polyethylene terephthalate layer having a thickness of 12 μm was laminated to have a total thickness of 142 μm and a linear expansion coefficient of 80 ppm.

<support member D4>

The pressure-sensitive adhesive composition was applied onto a release liner comprising a polyethylene terephthalate film after the release treatment so that the thickness after drying was 25 μm, and after drying at 110 ° C for 3 minutes, and containing a low density A resin film substrate (thickness: 50 μm) of polyethylene (LDPE, which has not been subjected to mold release treatment) was attached and transferred, and a support member D4 having a thickness of 75 μm and a width of 36 mm was produced. The coefficient of linear expansion is 230 ppm.

<support member D5>

The above-mentioned pressure-sensitive adhesive composition was applied onto a release liner comprising a polyethylene terephthalate film after the release treatment so that the thickness after drying was 25 μm, and after drying at 110 ° C for 3 minutes, A resin film substrate (thickness: 50 μm) of ethylene phthalate (without release treatment) was attached and transferred, and a support member D5 having a thickness of 75 μm and a width of 44 mm was produced. Linear The coefficient of expansion is 60 ppm.

<support member D6>

The above-mentioned pressure-sensitive adhesive composition was applied onto a release liner comprising a polyethylene terephthalate film after the release treatment so that the thickness after drying was 25 μm, and after drying at 110 ° C for 3 minutes, A base film (thickness: 50 μm) of ethylene phthalate (without release treatment) was attached and transferred to prepare a support member D6 having a thickness of 75 μm and a width of 40 mm. The coefficient of linear expansion is 60 ppm.

<support member D7>

The above-mentioned pressure-sensitive adhesive composition was applied onto a release liner comprising a polyethylene terephthalate film after the release treatment so that the thickness after drying was 25 μm, and after drying at 110 ° C for 3 minutes, A resin film substrate (thickness: 75 μm) of ethylene phthalate (without release treatment) was attached and transferred, and a support member D7 having a thickness of 100 μm and a width of 40 mm was produced. The coefficient of linear expansion is 60 ppm.

<support member D8>

The above-mentioned pressure-sensitive adhesive composition was applied onto a release liner comprising a polyethylene terephthalate film after the release treatment so that the thickness after drying was 25 μm, and after drying at 110 ° C for 3 minutes, A resin film substrate (thickness: 75 μm) of ethylene phthalate (without release treatment) was attached and transferred, and a support member D8 having a thickness of 100 μm and a width of 35 mm was produced. line The coefficient of expansion is 60 ppm.

(Example 1)

The adhesive layer C1 is formed in the release film A1, and the adhesive layer C1 is returned to normal temperature, and the adhesive layer C1 is adjusted so as to have a depth of 1/2 or less of the thickness of the release film A1, and then a circle having a diameter of 320 mm is formed. Shape pre-cut processing. Thereafter, the unnecessary portion of the adhesive layer C1 is removed, and the adhesive film B1 is laminated with the release film A1 at room temperature so that the adhesive layer is brought into contact with the adhesive layer. Then, the adhesive film B1 is adjusted so as to have a depth of cut of 1/2 or less of the thickness of the release film A1, and then a circular pre-cut process having a diameter of 370 mm is formed concentrically with the adhesive layer C1. The tension of 15N was taken up by 300 pieces. Then, the support member D1 is bonded to the both surfaces of the release film A1 opposite to the surface on which the adhesive layer C1 and the adhesive film B1 are provided, and both ends in the short-side direction of the release film A1. 1 wafer processing tape. It is set such that the total width of the support members in the short-side direction of the release film is sD, and the diameter of the adhesive layer is set to a. When the length of the release film in the short-side direction is L, it is [(sD+a) - L] = 2 mm, the support member reached a region 2 mm corresponding to the end portion of the adhesive layer in the short side direction of the release film.

(Examples 2 to 8 and Comparative Example 1)

The wafer processing tapes of Examples 2 to 8 and Comparative Example 1 were produced in the same manner as in Example 1 in the combination of Table 1. Further, the amount of the support member reaching the region corresponding to the end portion of the adhesive layer in the short side direction of the release film The superposition A (mm) is shown in Table 2.

[Evaluation of the presence or absence of air intrusion and transfer marks]

The wafer processing tapes of the examples and the comparative examples were placed in a polyethylene bag, degassed, and then heat-sealed, and the side plates made of polypropylene were attached to both end portions. Then, two PP tapes were tied and joined by fusion so as to become a cross. After that, each package was stored in a refrigerator (5 ° C) for one month, and then taken out from the refrigerator, and stored in a packing box together with plate-shaped dry ice, placed in a transport truck, and shuttled between Hiratsuka and Akita (about 1000 km). ). At this time, the minimum temperature of the package is -43 ° C, and the maximum temperature is 7 ° C. After that, each package is opened, the roll is returned to normal temperature, the package is opened, the roll is unwound, and the presence or absence of intrusion of air between the adhesive layer and the release film is visually observed, and the MD and TD are transferred upward. The presence or absence of traces. The results are shown in Table 2.

[Inhibition evaluation of pores after installation]

The adhesive sheets of the examples and the comparative examples were placed in a polyethylene bag, degassed, and then heat-sealed, and the side plates made of polypropylene were attached to both end portions. Then, two PP tapes were tied and joined by fusion so as to become a cross. After that, each package was stored in a refrigerator (5 ° C) for one month, and then taken out from the refrigerator, and stored in a packing box together with plate-shaped dry ice, placed in a transport truck, and shuttled between Hiratsuka and Akita (about 1000 km). ). At this time, the minimum temperature of the package is -43 ° C, and the maximum temperature is 7 ° C. Thereafter, each package is opened, the roll is returned to normal temperature, the package is opened, and the package is mounted on a semiconductor wafer. As a semiconductor wafer, use a size of 12 inches and a thickness of 50 μm Wafer. The mounting conditions of the semiconductor wafer are as follows.

<Finishing conditions>

Pasting device: wafer mounter DAM-812M (made by Takatori)

Paste speed meter: 50mm/sec

Paste pressure: 0.1MPa

Pasting temperature: 60 ° C, 90 ° C

Thereafter, it was confirmed by a microscope whether or not voids (air bubbles) were present on the bonding surface of the wafer processing tape and the semiconductor wafer. The results are shown in Table 2.

As shown in Table 2, in the tape for wafer processing according to the embodiment, the support member is at both ends in the short-side direction of the release film, and Since the region corresponding to the end portion of the adhesive layer in the short-side direction of the release film is provided, the intrusion of air into the inside of the adhesive layer is not observed. Further, although the transfer marks due to the support members were observed in the TD direction, the randomly generated label marks were not observed in the MD side and the TD direction. Further, although the transfer mark due to the support member was generated in the TD direction, since it was the outer side of the wafer bonding region, no void was generated at the time of wafer bonding.

On the other hand, in the tape for wafer processing according to the comparative example, the support member is at both ends in the short-side direction of the release film and in the short-side direction of the release film and the end of the adhesive layer. Since the portion corresponding to the portion is provided, the transfer mark is not observed in the MD direction or the TD direction, but the air intrudes into the inside of the adhesive layer, and a part of the wafer is bonded to the wafer.

10‧‧‧ Wafer processing tape

11‧‧‧ release film

11a‧‧‧1st

11b‧‧‧2nd

12‧‧‧ adhesive layer

13‧‧‧Adhesive film

13a‧‧‧Circular label

13b‧‧‧ peripherals

14‧‧‧Support members

Claims (15)

A tape for processing a wafer, comprising: a long release film; an adhesive layer provided on a first surface of the release film and having a predetermined planar shape; and an adhesive film having a label And a peripheral portion surrounding the outer side of the label portion, the label portion is provided to cover the adhesive layer and is in contact with the release film around the adhesive layer, and has a predetermined planar shape; and a support member Provided on the second surface of the release film opposite to the first surface on which the adhesive layer and the pressure-sensitive adhesive film are provided, and provided at both ends in the short-side direction of the release film, and The region of the short-side direction of the release film corresponding to the end portion of the adhesive layer is provided. The tape for wafer processing according to the first aspect of the invention, wherein the total width of the support member in the short-side direction of the release film is sD, and the diameter of the adhesive layer is a. When the length of the short-side direction of the release film is set to L, 0 mm<[(sD+a) )-L]<20mm. The tape for wafer processing according to claim 1 or 2, wherein the support member has a linear expansion coefficient of 300 ppm/° C. or less. Wafer processing as claimed in any of claims 1 to 3 In the tape, the difference between the linear expansion coefficient of the support member and the linear expansion coefficient of the release film is 250 ppm/° C. or less. The adhesive tape for wafer processing according to any one of claims 1 to 4, wherein the adhesive film has an adhesive layer and a base film, and a static friction coefficient between the base film and the support member is 0.2~2.0. The tape for wafer processing according to any one of claims 1 to 5, wherein the support member is continuously provided along a longitudinal direction of the release film. The tape for wafer processing according to any one of claims 1 to 6, wherein the support member has a thickness equal to or greater than a thickness of the adhesive layer. The tape for wafer processing according to any one of claims 1 to 7, wherein the support member is colored. The tape for wafer processing according to claim 8, wherein the support member is colored according to the type of the tape for wafer processing. The tape for wafer processing according to claim 8, wherein the support member is colored according to the thickness of the tape for wafer processing. Wafer addition as claimed in any of claims 1 to 10 The work tape, wherein the support member has a laminated structure of two or more layers. The wafer processing tape according to any one of claims 1 to 11, wherein the support member is selected from the group consisting of polyethylene terephthalate, polypropylene, and high density polyethylene. The resin film substrate is coated with an adhesive tape to which an adhesive is applied. The wafer processing tape according to any one of claims 1 to 12, wherein the tensile storage elastic modulus Eb of the adhesive film at 23 ° C and the release film of the foregoing at 23 ° C The ratio Eb/Ea of the tensile storage elastic modulus Ea is 0.001 to 100. The tape for wafer processing according to any one of claims 1 to 13, wherein a ratio Ta/Tb of a thickness Ta of the release film to a thickness Tb of the adhesive film is 0.07 to 2.5. The tape for wafer processing according to any one of claims 1 to 14, wherein in the T-peel test under the conditions of a temperature of 23 ± 2 ° C and a peeling speed of 300 mm / min, the adhesive layer and the foregoing The peeling force F1 between the release films is 0.025 to 0.075 N/100 mm, and the peeling force F2 between the adhesive layer and the adhesive film is 0.08 to 10 N/100 mm. F1 < F2.