TWI577777B - Wafer processing tape - Google Patents

Wafer processing tape Download PDF

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TWI577777B
TWI577777B TW104140173A TW104140173A TWI577777B TW I577777 B TWI577777 B TW I577777B TW 104140173 A TW104140173 A TW 104140173A TW 104140173 A TW104140173 A TW 104140173A TW I577777 B TWI577777 B TW I577777B
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film
adhesive
adhesive layer
tape
support member
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TW104140173A
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TW201631082A (en
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杉山二朗
青山真沙美
佐久間登
大田郷史
木村和寛
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古河電氣工業股份有限公司
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  • Engineering & Computer Science (AREA)
  • Dicing (AREA)
  • Adhesive Tapes (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Description

晶圓加工用膠帶 Wafer processing tape

本發明涉及晶圓加工用膠帶,特別是涉及具有晶粒切割帶和晶粒接合膜的2個功能的晶圓加工用膠帶。 The present invention relates to a tape for wafer processing, and more particularly to a tape for wafer processing having two functions of a die dicing tape and a die bond film.

最近,正在開發一種晶粒切割/晶粒接合帶,其兼具將半導體晶圓切斷分離(晶粒切割)為各個晶片時用於固定半導體晶圓的晶粒切割帶、和用於將切斷後的半導體晶片黏接著於引線框架或封裝基板等、或者在堆疊封裝中用於將半導體晶片彼此層疊、黏接著的晶粒接合膜(也稱為晶粒貼裝膜)的2個功能。 Recently, a die cutting/die bonding tape is being developed which combines a die cutting tape for fixing a semiconductor wafer when the semiconductor wafer is cut and separated (die-cut) into individual wafers, and is used for cutting The broken semiconductor wafer is bonded to a lead frame or a package substrate or the like, or two functions of a die bond film (also referred to as a die attach film) for laminating and adhering semiconductor wafers to each other in a stacked package.

作為這樣的晶粒切割/晶粒接合帶,考慮到向晶圓的貼附、晶粒切割時的向環形框架的安裝等的操作性,有時實施了預切割加工。 As such a die cutting/die bonding tape, pre-cut processing may be performed in consideration of operability such as attachment to a wafer or mounting to a ring frame at the time of die cutting.

在圖4和圖5中示出預切割加工後的晶粒切割/晶粒接合帶的例子。圖4是表示將晶粒切割/晶粒接合帶捲繞為捲筒狀的狀態的圖,圖5(a)是晶粒切割/ 晶粒接合帶的俯視圖,圖5(b)是基於圖5(a)的線B-B的剖面圖。晶粒切割/晶粒接合帶50包含脫模膜51、接著劑層52和黏合膜53。接著劑層52加工為與晶圓的形狀對應的圓形,具有圓形標籤形狀。黏合膜53中除去了與晶粒切割用的環形框架的形狀對應的圓形部分的周邊區域,如圖所示,具有圓形標籤部53a和包圍其外側的周邊部53b。接著劑層52與黏合膜53的圓形標籤部53a以將其中心對齊的方式層疊,另外,黏合膜53的圓形標籤部53a覆蓋接著劑層52且在其周圍與脫模膜51接觸。 An example of a die cutting/die bonding tape after pre-cut processing is shown in FIGS. 4 and 5. 4 is a view showing a state in which a die cutting/die bond tape is wound into a roll shape, and FIG. 5(a) is a die cutting/ A plan view of the die bond tape, and Fig. 5(b) is a cross-sectional view based on line B-B of Fig. 5(a). The die cutting/die bonding tape 50 includes a release film 51, an adhesive layer 52, and an adhesive film 53. The subsequent agent layer 52 is processed into a circular shape corresponding to the shape of the wafer and has a circular label shape. The adhesive film 53 has a peripheral portion of a circular portion corresponding to the shape of the annular frame for die cutting, and as shown, has a circular label portion 53a and a peripheral portion 53b surrounding the outer side thereof. The adhesive layer 52 and the circular label portion 53a of the adhesive film 53 are laminated so as to be aligned with each other, and the circular label portion 53a of the adhesive film 53 covers the adhesive layer 52 and is in contact with the release film 51 around the adhesive layer 51.

將晶圓晶粒切割時,從層疊狀態的接著劑層52和黏合膜53剝離脫模膜51,如圖6所示,在接著劑層52上貼附半導體晶圓W的背面,在黏合膜53的圓形標籤部53a的外周部黏合固定晶粒切割用環形框架R。在該狀態下將半導體晶圓W晶粒切割,之後,對黏合膜53實施紫外線照射等固化處理後拾取半導體晶片。此時,黏合膜53由於固化處理而黏合力降低,因此容易從接著劑層52剝離,在背面附著了接著劑層52的狀態下拾取半導體晶片。附著於半導體晶片的背面的接著劑層52在之後將半導體晶片接著於引線框架、封裝基板、或其他半導體晶片時,作為晶粒接合膜起作用。 When the wafer die is cut, the release film 51 is peeled off from the adhesive layer 52 and the adhesive film 53 in a laminated state, and as shown in FIG. 6, the back surface of the semiconductor wafer W is attached to the adhesive layer 52, and the adhesive film is bonded. The outer peripheral portion of the circular label portion 53a of 53 is bonded and fixed to the ring-shaped frame R for die cutting. In this state, the semiconductor wafer W is diced, and then the adhesion film 53 is subjected to a curing treatment such as ultraviolet irradiation to pick up the semiconductor wafer. At this time, since the adhesive force of the adhesive film 53 is lowered by the curing treatment, it is easy to peel off from the adhesive layer 52, and the semiconductor wafer is picked up while the adhesive layer 52 is adhered to the back surface. The adhesive layer 52 attached to the back surface of the semiconductor wafer functions as a grain bonding film when the semiconductor wafer is subsequently attached to a lead frame, a package substrate, or other semiconductor wafer.

另外,就像上述那樣的晶粒切割/晶粒接合帶50而言,接著劑層52與黏合膜53的圓形標籤部53a層疊的部分比黏合膜53的周邊部53b厚。因此,作為製品捲繞成捲筒狀時,接著劑層52與黏合膜53的圓形標籤 部53a的層疊部分、與黏合膜53的周邊部53a的高度差相互重疊,發生在柔軟的接著劑層52表面轉印高度差的現象,即圖7所示的那樣的轉印痕(也稱為標籤痕跡、皺紋、或捲繞痕跡)。這樣的轉印痕的產生特別是在接著劑層52由柔軟的樹脂形成的情況、存在厚度的情況和帶50的捲繞數多的情況等顯著。然後,若產生轉印痕,則存在由接著劑層與半導體晶圓的接著不良導致在晶圓的加工時產生不良情況的可能性。 Further, as in the above-described die cutting/die bonding tape 50, the portion where the adhesive layer 52 and the circular label portion 53a of the adhesive film 53 are laminated is thicker than the peripheral portion 53b of the adhesive film 53. Therefore, when the product is wound into a roll shape, the circular layer of the adhesive layer 52 and the adhesive film 53 The difference in height between the laminated portion of the portion 53a and the peripheral portion 53a of the adhesive film 53 overlaps with each other, and the transfer height difference occurs on the surface of the flexible adhesive layer 52, that is, the transfer mark as shown in Fig. 7 (also called Label marks, wrinkles, or winding marks). The occurrence of such a transfer mark is remarkable particularly in the case where the adhesive layer 52 is formed of a soft resin, the case where the thickness is present, and the case where the number of windings of the tape 50 is large. Then, when a transfer mark is generated, there is a possibility that a defect occurs in the processing of the wafer due to a defect in adhesion between the adhesive layer and the semiconductor wafer.

為瞭解決這樣的問題,正在開發一種晶圓加工用膠帶,其為脫模膜的與設置了接著劑層和黏合膜的第1面相反的第2面上、且在脫模膜的短邊方向的兩端部設置了支承構件(例如,參照專利文獻1)。這樣的晶圓加工用膠帶設置了支承構件,因此在將晶圓加工用膠帶捲繞為捲筒狀時,可以將對帶施加的捲繞壓力分散、或集中于支承構件,因此,可以抑制向接著劑層的轉印跡的形成。 In order to solve such a problem, a tape for wafer processing has been developed which is a second surface of a release film opposite to the first surface on which the adhesive layer and the adhesive film are provided, and on the short side of the release film. Support members are provided at both ends of the direction (for example, refer to Patent Document 1). Since such a wafer processing tape is provided with a support member, when the wafer processing tape is wound into a roll shape, the winding pressure applied to the tape can be dispersed or concentrated on the support member, so that the support can be suppressed. The formation of a transprint of the layer of the agent is then carried out.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本專利第4360653號公報 [Patent Document 1] Japanese Patent No. 4360653

黏合膜覆蓋接著劑層且在其周圍與脫模膜接觸,但根據接著劑層的厚度,有時在脫模膜與黏合膜之間 產生極小的空隙、殘留空氣(air)。上述專利文獻1中記載的晶圓加工用膠帶在脫模膜的短邊方向兩端部設置了支承構件。因此,在將晶圓加工用膠帶捲繞為捲筒狀的狀態中,標籤部與在其上捲繞的脫模膜之間成為中空結構,支承構件為了防止標籤痕跡需要設置為較大的寬度,出現了存在上述空氣(air)不能向標籤部的外側移動、侵入接著劑層與黏合膜之間的可能性的問題。在接著劑層與黏合膜之間侵入的空氣(air)也稱為孔隙,存在產生對半導體晶圓W的貼合不良、造成之後的半導體晶圓W的晶粒切割程序或晶片的拾取程序、接合程序的成品率的降低的可能性。 The adhesive film covers the adhesive layer and is in contact with the release film around it, but depending on the thickness of the adhesive layer, sometimes between the release film and the adhesive film Produces very small gaps and residual air. The tape for wafer processing described in the above-mentioned Patent Document 1 is provided with a support member at both end portions in the short-side direction of the release film. Therefore, in a state in which the wafer processing tape is wound into a roll shape, a hollow structure is formed between the label portion and the release film wound thereon, and the support member needs to be set to have a large width in order to prevent the label mark. There is a problem in that the air (air) cannot move to the outside of the label portion and enters between the adhesive layer and the adhesive film. The air that intrudes between the adhesive layer and the adhesive film is also referred to as a void, and there is a defect in which the semiconductor wafer W is poorly bonded, a subsequent die cutting process of the semiconductor wafer W, or a wafer pick-up procedure. The possibility of a reduction in the yield of the bonding process.

因此,本發明的課題在於提供可以減少標籤痕跡的產生、且減少在接著劑層與黏合膜之間捲繞空氣(air)的晶圓加工用膠帶。 Therefore, an object of the present invention is to provide a wafer processing tape which can reduce the occurrence of label marks and reduce the air (air) wound between the adhesive layer and the adhesive film.

為瞭解決以上的課題,本發明所涉及的晶圓加工用膠帶的特徵在於具有:長的脫模膜;接著劑層,設置在前述脫模膜的第1面上、且具有既定的平面形狀;黏合膜,具有標籤部和包圍前述標籤部的外側的周邊部,前述標籤部以覆蓋前述接著劑層、且在前述接著劑層的周圍與前述脫模膜接觸的方式設置,並且具有既定的平面形狀;以及支承構件,設置在前述脫模膜的與設置有前述接著劑層和前述黏合膜的第1面相反的第2面上,且在比前 述接著劑層的在前述脫模膜的短邊方向上的端部更靠外側的一個區域中、沿前述脫模膜的短邊方向設置有多個。 In order to solve the above problems, the tape for wafer processing according to the present invention has a long release film, and an adhesive layer is provided on the first surface of the release film and has a predetermined planar shape. The adhesive film has a label portion and a peripheral portion surrounding the outer side of the label portion, and the label portion is provided to cover the adhesive layer and is in contact with the release film around the adhesive layer, and has a predetermined shape. a planar shape; and a support member provided on the second surface of the release film opposite to the first surface on which the adhesive layer and the adhesive film are provided, and before In one region of the adhesive layer in which the end portion in the short-side direction of the release film is further outward, a plurality of the adhesive layer are provided along the short-side direction of the release film.

上述半導體加工用膠帶優選在前述一個區域中設置的前述支承構件中,靠近前述接著層的一側的厚度最厚。 Preferably, in the above-mentioned support member provided in the one region, the tape for semiconductor processing has the thickest thickness on the side close to the adhesive layer.

另外,上述半導體加工用膠帶優選上述支承構件的各自的寬度為10~15mm、設置於上述一個區域中的上述支承構件之間的間隔為5mm以上。 Further, in the above-mentioned tape for semiconductor processing, it is preferable that the width of each of the support members is 10 to 15 mm, and the distance between the support members provided in the one region is 5 mm or more.

根據本發明,可以減少標籤痕跡的產生、且減少在接著劑層與黏合膜之間捲繞空氣(air)。 According to the present invention, it is possible to reduce the occurrence of label marks and to reduce the winding of air between the adhesive layer and the adhesive film.

10‧‧‧晶圓加工用膠帶 10‧‧‧ Wafer processing tape

11‧‧‧脫模膜 11‧‧‧ release film

12‧‧‧接著劑層 12‧‧‧ adhesive layer

13‧‧‧黏合膜 13‧‧‧Adhesive film

13a‧‧‧圓形標籤部 13a‧‧‧Circular label

13b‧‧‧周邊部 13b‧‧‧ peripherals

14、14'、14"‧‧‧支承構件 14, 14', 14" ‧ ‧ support members

圖1的(a)是本發明的實施方式所涉及的晶圓加工用膠帶的俯視圖,(b)是(a)的基於線A-A的剖面圖。 Fig. 1(a) is a plan view of a wafer processing tape according to an embodiment of the present invention, and Fig. 1(b) is a cross-sectional view taken along line A-A of (a).

圖2是本發明的另一實施方式所涉及的晶圓加工用膠帶的剖面圖。 2 is a cross-sectional view showing a tape for wafer processing according to another embodiment of the present invention.

圖3是本發明的進一步另一實施方式所涉及的晶圓加工用膠帶的剖面圖。 3 is a cross-sectional view showing a tape for wafer processing according to still another embodiment of the present invention.

圖4是以往的晶圓加工用膠帶的立體圖。 4 is a perspective view of a conventional tape for wafer processing.

圖5的(a)為以往的晶圓加工用膠帶的俯視圖,(b)為(a)的基於線B-B的剖面圖。 Fig. 5 (a) is a plan view of a conventional wafer processing tape, and Fig. 5 (b) is a cross-sectional view taken along line B-B of (a).

圖6為顯示晶圓加工用膠帶與晶粒切割用環形框架貼合的狀態的剖面圖。 Fig. 6 is a cross-sectional view showing a state in which a tape for wafer processing is bonded to a ring frame for die cutting.

圖7為用於說明以往的晶圓加工用膠帶的不良情況的示意圖。 FIG. 7 is a schematic view for explaining a problem of the conventional wafer processing tape.

以下基於附圖對本發明的實施方式詳細地說明。圖1(a)是本發明的實施方式所涉及的晶圓加工用膠帶(晶粒切割/晶粒接合帶)的俯視圖,圖1(b)是圖1(a)的基於線A-A的剖面圖。 Embodiments of the present invention will be described in detail below based on the drawings. 1(a) is a plan view of a wafer processing tape (die cutting/die bonding tape) according to an embodiment of the present invention, and FIG. 1(b) is a cross-sectional view taken along line AA of FIG. 1(a). .

如圖1(a)和圖1(b)所示,晶圓加工用膠帶10具有長的脫模膜11、接著劑層12、黏合膜13和支承構件14。 As shown in FIGS. 1(a) and 1(b), the wafer processing tape 10 has a long release film 11, an adhesive layer 12, an adhesive film 13, and a support member 14.

接著劑層12設置於脫模膜的第1面上,具有與晶圓的形狀對應的圓形標籤形狀。黏合膜13具有圓形標籤部13a和包圍該圓形標籤部13a的外側的周邊部13b,前述圓形標籤部13a以覆蓋接著劑層12、且在接著劑層12的周圍與脫模膜接觸的方式設置。周邊部13b包括將圓形標籤部13a的外側完全包圍的形態、和如圖所示的不完全包圍的形態。圓形標籤部13a具有與晶粒切割用的環形框架對應的形狀。而且,支承構件14設置在脫模膜11的與設置有接著劑12和黏合膜13的第1面11a相反的第2面11b上,且在比接著劑層12的在脫模膜11的短邊方向上的端部更靠外側的一個區域r中、沿前述脫模 膜11的短邊方向設置有多個。 The adhesive layer 12 is provided on the first surface of the release film and has a circular label shape corresponding to the shape of the wafer. The adhesive film 13 has a circular label portion 13a and a peripheral portion 13b surrounding the outer side of the circular label portion 13a. The circular label portion 13a covers the adhesive layer 12 and is in contact with the release film around the adhesive layer 12. Way to set. The peripheral portion 13b includes a form in which the outer side of the circular label portion 13a is completely surrounded, and a form that is not completely surrounded as shown in the drawing. The circular label portion 13a has a shape corresponding to the annular frame for die cutting. Further, the support member 14 is provided on the second surface 11b of the release film 11 opposite to the first surface 11a on which the adhesive 12 and the adhesive film 13 are provided, and is shorter than the release film 11 of the adhesive layer 12. a portion r in the outer side of the edge in the side direction, along the aforementioned stripping A plurality of short sides of the film 11 are provided.

以下,對本實施方式的晶圓加工用膠帶10的各構成要素詳細地說明。 Hereinafter, each component of the wafer processing tape 10 of the present embodiment will be described in detail.

(脫模膜) (release film)

作為本發明的晶圓加工用膠帶10中使用的脫模膜11,可以使用聚酯(PET、PBT、PEN、PBN、PTT)系、聚烯烴(PP、PE)系、共聚物(EVA、EEA、EBA)系、或將這些材料一部分置換從而進一步將接著性、機械強度提高了的膜。另外,可以為這些膜的層疊體。 As the release film 11 used in the wafer processing tape 10 of the present invention, polyester (PET, PBT, PEN, PBN, PTT), polyolefin (PP, PE), and copolymer (EVA, EEA) can be used. , EBA), or a film in which a part of these materials are replaced to further improve adhesion and mechanical strength. Further, it may be a laminate of these films.

脫模膜的厚度沒有特別限制,可以適當設定,但優選25~50μm。 The thickness of the release film is not particularly limited and may be appropriately set, but is preferably 25 to 50 μm.

(接著劑層) (adhesive layer)

本發明的接著劑層12如上前述,具有在脫模膜11的第1面11a上形成、與晶圓的形狀對應的圓形標籤形狀。 As described above, the adhesive layer 12 of the present invention has a circular label shape formed on the first surface 11a of the release film 11 and corresponding to the shape of the wafer.

接著劑層12在貼合併晶粒切割半導體晶圓等後,在拾取晶片時,附著於晶片背面,作為將晶片固定於基板、引線框架時的接著劑使用。作為接著劑層12,可以優選使用含有選自環氧系樹脂、丙烯酸系樹脂,酚系樹脂中的至少1種的黏接著劑等。除此以外,也可以使用聚醯亞胺系樹脂、矽酮系樹脂。其厚度可以適當設定,但優選5~100μm左右。 After attaching the die-cut semiconductor wafer or the like, the adhesive layer 12 adheres to the back surface of the wafer when the wafer is picked up, and is used as an adhesive when the wafer is fixed to the substrate or the lead frame. As the adhesive layer 12, an adhesive containing at least one selected from the group consisting of an epoxy resin, an acrylic resin, and a phenol resin can be preferably used. In addition to this, a polyimide-based resin or an anthrone-based resin can also be used. The thickness can be appropriately set, but it is preferably about 5 to 100 μm.

(黏合膜) (adhesive film)

本發明的黏合膜13如上前述,具有與晶粒切割用的環形框架的形狀對應的圓形標籤部13a和包圍其外側的周邊部13b。可以通過預切割加工,從膜狀黏合劑除去圓形標籤部13a的周邊區域來形成這樣的黏合膜。 As described above, the adhesive film 13 of the present invention has a circular label portion 13a corresponding to the shape of the annular frame for die cutting and a peripheral portion 13b surrounding the outer side. Such an adhesive film can be formed by removing the peripheral region of the circular label portion 13a from the film adhesive by pre-cut processing.

作為黏合膜13,沒有特別限制,只要具有將晶圓晶粒切割時晶圓不剝離的充分的黏合力,在晶粒切割後拾取晶片時表現出可以容易地從接著劑層剝離的低的黏合力即可。例如,可以適宜地使用在基材膜設置了黏合劑層的黏合膜。 The adhesive film 13 is not particularly limited as long as it has a sufficient adhesive force to prevent the wafer from being peeled off when the wafer die is cut, and exhibits a low adhesion which can be easily peeled off from the adhesive layer when the wafer is picked up after the die cutting. You can do it. For example, an adhesive film in which a binder layer is provided on a substrate film can be suitably used.

作為黏合膜13的基材膜,只要為以往公知的基材膜就可以沒有特別限制地使用,但使用放射線固化性的材料作為後述的黏合劑層時,優選使用具有放射線透射性的基材膜。 The base film of the adhesive film 13 is not particularly limited as long as it is a conventionally known base film. However, when a radiation curable material is used as a binder layer to be described later, it is preferable to use a substrate film having radiation transparency. .

例如,作為其材料,可舉出聚乙烯、聚丙烯、乙烯-丙烯共聚物、聚丁烯-1、聚-4-甲基戊烯-1、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸乙酯共聚物、乙烯-丙烯酸甲酯共聚物、乙烯-丙烯酸共聚物、離聚物等α-烯烴的均聚物或共聚物或它們的混合物、聚氨酯、苯乙烯-乙烯-丁烯或戊烯系共聚物、聚醯胺-多元醇共聚物等熱塑性彈性體、和它們的混合物。另外,基材膜可以為選自它們的組中的2種以上的材料混合而成的基材膜,也可以是將它們單層或多層化而成的基材膜。 For example, examples of the material thereof include polyethylene, polypropylene, ethylene-propylene copolymer, polybutene-1, poly-4-methylpentene-1, ethylene-vinyl acetate copolymer, and ethylene-acrylic acid B. Homopolymer or copolymer of an α-olefin such as an ester copolymer, an ethylene-methyl acrylate copolymer, an ethylene-acrylic acid copolymer, an ionomer, or a mixture thereof, a polyurethane, a styrene-ethylene-butylene or a pentene system Thermoplastic elastomers such as copolymers, polyamine-polyol copolymers, and mixtures thereof. Further, the base film may be a base film obtained by mixing two or more kinds of materials selected from the group consisting of them, or may be a base film obtained by laminating them in a single layer or a plurality of layers.

基材膜的厚度沒有特別限制,可以適當設定,但優選 50~200μm。 The thickness of the base film is not particularly limited and may be appropriately set, but is preferably 50~200μm.

作為黏合膜13的黏合劑層中使用的樹脂,沒有特別限制,可以使用黏合劑中使用的公知的氯化聚丙烯樹脂、丙烯酸類樹脂、聚酯樹脂、聚氨酯樹脂、環氧樹脂等。 The resin to be used in the adhesive layer of the adhesive film 13 is not particularly limited, and a known chlorinated polypropylene resin, an acrylic resin, a polyester resin, a urethane resin, an epoxy resin or the like used in the adhesive can be used.

優選在黏合劑層13的樹脂中適當配合丙烯酸系黏合劑、放射線聚合性化合物、光聚合引發劑、固化劑等來製備黏合劑。黏合劑層13的厚度沒有特別限制而可以適當設定,但優選5~30μm。 An adhesive such as an acrylic adhesive, a radiation polymerizable compound, a photopolymerization initiator, a curing agent, or the like is preferably blended in the resin of the adhesive layer 13 to prepare a binder. The thickness of the adhesive layer 13 is not particularly limited and may be appropriately set, but is preferably 5 to 30 μm.

可以在黏合劑層中配合放射線聚合性化合物並通過放射線固化而使得容易從接著劑層剝離。該放射線聚合性化合物可以使用例如能通過光照射而三維網狀化的在分子內具有至少2個以上光聚合性碳-碳雙鍵的低分量化合物。 The radiation polymerizable compound can be blended in the binder layer and can be easily peeled off from the adhesive layer by radiation curing. As the radiation polymerizable compound, for example, a low-component compound having at least two or more photopolymerizable carbon-carbon double bonds in the molecule which can be three-dimensionally networked by light irradiation can be used.

具體地,能應用三羥甲基丙烷三丙烯酸酯、季戊四醇三丙烯酸酯、季戊四醇四丙烯酸酯、二季戊四醇單羥基五丙烯酸酯、二季戊四醇六丙烯酸酯、1,4-丁二醇二丙烯酸酯、1,6-己二醇二丙烯酸酯、聚乙二醇二丙烯酸酯或寡丙烯酸酯(Oligoester acrylate)等。 Specifically, trimethylolpropane triacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, 1,4-butanediol diacrylate, 1 can be used. , 6-hexanediol diacrylate, polyethylene glycol diacrylate or oligoester acrylate.

另外,除了像上述那樣的丙烯酸酯系化合物以外,也可以使用氨基甲酸酯丙烯酸酯系寡聚物。可以使聚酯型或聚醚型等的多元醇化合物與多價異氰酸酯化合物(例如,2,4-甲苯二異氰酸酯、2,6-甲苯二異氰酸酯、1,3-亞二甲苯基二異氰酸酯、1,4-亞二甲苯基二異氰酸酯、二 苯基甲烷4,4-二異氰酸酯等)反應而得的末端異氰酸酯氨基甲酸酯預聚物與具有羥基的丙烯酸酯或甲基丙烯酸酯(例如,丙烯酸-2-羥基乙酯、甲基丙烯酸-2-羥基乙酯、丙烯酸-2-羥基丙酯、甲基丙烯酸-2-羥基丙酯、聚乙二醇丙烯酸酯、聚乙二醇甲基丙烯酸酯等)反應來得到氨基甲酸酯丙烯酸酯系寡聚物。 Further, in addition to the acrylate-based compound as described above, a urethane acrylate-based oligomer may be used. A polyol compound such as a polyester type or a polyether type can be obtained with a polyvalent isocyanate compound (for example, 2,4-toluene diisocyanate, 2,6-toluene diisocyanate, 1,3-xylylene diisocyanate, 1 , 4-xylylene diisocyanate, two a terminal isocyanate urethane prepolymer obtained by reacting phenylmethane 4,4-diisocyanate or the like with an acrylate or methacrylate having a hydroxyl group (for example, 2-hydroxyethyl acrylate, methacrylic acid - 2-hydroxyethyl ester, 2-hydroxypropyl acrylate, 2-hydroxypropyl methacrylate, polyethylene glycol acrylate, polyethylene glycol methacrylate, etc.) to obtain a urethane acrylate An oligomer.

在黏合劑層中,可以為選自上述的樹脂中的2種以上混合而成的混合物。 The binder layer may be a mixture of two or more selected from the above resins.

使用光聚合引發劑時,可以使用例如苯偶姻異丙醚、苯偶姻異丁醚、二苯甲酮、米蚩酮、氯噻噸酮、十二烷基噻噸酮(dodecyl thioxanthone)、二甲基噻噸酮(Dimethyl thioxanthone)、二乙基噻噸酮、苄基二甲基縮酮(benzyldimethylketal)、α-羥基環己基苯基酮、2-羥基甲基苯基丙烷等。這些光聚合引發劑的配合量相對於丙烯酸系共聚物100質量份優選0.01~5質量份。 When a photopolymerization initiator is used, for example, benzoin isopropyl ether, benzoin isobutyl ether, benzophenone, Michler's ketone, chlorothioxanthone, dodecyl thioxanthone, or the like may be used. Dimethyl thioxanthone, diethyl thioxanthone, benzyldimethylketal, α-hydroxycyclohexyl phenyl ketone, 2-hydroxymethyl phenylpropane, and the like. The amount of the photopolymerization initiator to be added is preferably 0.01 to 5 parts by mass based on 100 parts by mass of the acrylic copolymer.

(支承構件) (support member)

在脫模膜11的與設置了接著劑12和黏合膜13的第1面11a相反的第2面11b、且在比接著劑層12的在脫模膜11的短邊方向上的端部更靠外側的一個區域r中,在脫模膜11的短邊方向設置有多個支承構件14。通過像這樣設置支承構件14,在將晶圓加工用膠帶10捲繞為捲筒狀時,可以將對帶施加的捲繞壓力分散、或集中于支承構件14,因此變得能抑制對接著劑層12的轉印跡的形成。 The second surface 11b of the release film 11 opposite to the first surface 11a on which the adhesive 12 and the adhesive film 13 are provided is furthermore than the end portion of the adhesive layer 12 in the short side direction of the release film 11. In one region r on the outer side, a plurality of support members 14 are provided in the short side direction of the release film 11. By providing the support member 14 in this manner, when the wafer processing tape 10 is wound into a roll shape, the winding pressure applied to the tape can be dispersed or concentrated on the support member 14, and thus the adhesive can be suppressed. Formation of a transprint of layer 12.

另外,通過在比接著劑層12的在脫模膜11的短邊方向上的端部更靠外側的一個區域r中在脫模膜11的短邊方向設置多個支承構件14,可以減小欲在一個區域r中設置的一個支承構件14的寬度(脫模膜11的短邊方向的長度)。像現有專利文獻1中記載的晶圓加工用膠帶那樣支承構件的寬度大的情況下,在捲繞成捲筒狀的狀態下,黏合膜上表面被支承構件按壓,因此根據接著劑層12的厚度,在脫模膜11與圓形標籤部13a之間產生的間隙中殘留的空氣(air)不能向圓形標籤部13a的外側移動,但在支承構件14的寬度小的情況下,黏合膜13的上表面被支承構件14按壓的區域在脫模膜11的短邊方向中變小,因此對抗其擠壓力,在脫模膜11與圓形標籤部13a之間的間隙中殘留的空氣(air)可以向圓形標籤部13a的外側移動。 In addition, by providing a plurality of support members 14 in the short side direction of the release film 11 in a region r outside the end portion of the adhesive layer 12 in the short-side direction of the release film 11, it is possible to reduce The width of one support member 14 to be disposed in one region r (the length in the short side direction of the release film 11). When the width of the support member such as the wafer processing tape described in the prior art document 1 is large, the upper surface of the adhesive film is pressed by the support member in a state of being wound into a roll shape, and therefore, according to the adhesive layer 12 The air remaining in the gap between the release film 11 and the circular label portion 13a cannot move to the outside of the circular label portion 13a, but in the case where the width of the support member 14 is small, the adhesive film The region where the upper surface of the upper surface 13 is pressed by the support member 14 becomes smaller in the short-side direction of the release film 11, and therefore the air remaining in the gap between the release film 11 and the circular label portion 13a against the pressing force thereof is opposed. (air) can move to the outside of the circular label portion 13a.

此外,比接著劑層12的在脫模膜11的短邊方向上的端部更靠外側的區域如圖1所示,在脫模膜11的紙面右側端部和紙面左側端部存在2處,由於要在一個區域r中在脫模膜11的短邊方向設置多個支承構件14,因此不包括在脫模膜11的紙面右側端部和紙面左側端部分別設置1個情況。 Further, an area outside the end portion of the adhesive layer 12 in the short-side direction of the release film 11 is as shown in FIG. 1, and there are two places on the right side end portion of the release film 11 and the left end portion of the paper surface. Since a plurality of support members 14 are provided in the short side direction of the release film 11 in one region r, one case is not included in the right end portion of the release surface of the release film 11 and the left end portion of the paper surface.

此外,圖1中,分別在脫模膜11的紙面右側端部和紙面左側端部設置了2個支承構件14,但只要為2個以上就沒有特別限定。另外,也可以在脫模膜11的紙面右側端部和紙面左側端部中的任意一側端部設置多個支 承構件14。 In addition, in FIG. 1, two support members 14 are provided in the right end portion of the release surface of the release film 11 and the left end portion of the paper surface, but there are no particular limitations as long as they are two or more. Further, a plurality of branches may be provided at one end of the right side of the paper surface of the release film 11 and the left end of the paper surface. Bearing member 14.

在設置了接著劑12和黏合膜13的第1面11a形成支承構件時,對支承層的寬度存在限制,與此相對,在本實施方式的構成中,可以更廣泛地確保支承構件14的寬度,可以更有效地抑制轉印痕的產生。進一步,通過在脫模膜11的第2面11b設置支承構件14,可以得到對支承構件14的位置偏移的容許度變大的效果。 When the support member is formed on the first surface 11a in which the adhesive 12 and the adhesive film 13 are provided, the width of the support layer is limited. On the other hand, in the configuration of the present embodiment, the width of the support member 14 can be more widely ensured. It is possible to suppress the generation of transfer marks more effectively. Further, by providing the support member 14 on the second surface 11b of the release film 11, the effect of increasing the tolerance of the positional deviation of the support member 14 can be obtained.

支承構件14優選各自的寬度為10~15mm、在一個區域r中設置的支承構件14之間的間隔為5mm以上。通過將各支承構件14的寬度設置為10~15mm,空氣對抗基於支承構件14的擠壓力而變得更容易被排出至標籤部13a的外側。另外,通過將在一個區域r中設置的支承構件14之間的間隔設置為5mm以上,可以形成向外側移動的空氣可以進入的間隙,因此空氣變得更容易被排出至標籤部13a的外側。 The support members 14 preferably each have a width of 10 to 15 mm, and the interval between the support members 14 provided in one region r is 5 mm or more. By setting the width of each of the support members 14 to 10 to 15 mm, the air becomes more easily discharged to the outside of the label portion 13a against the pressing force based on the support member 14. In addition, by setting the interval between the support members 14 provided in one region r to 5 mm or more, a gap into which the air moving outward can enter can be formed, so that the air is more easily discharged to the outside of the label portion 13a.

作為支承構件14的厚度,與脫模膜11上的接著劑層12與黏合膜13的圓形標籤部13a的層疊部分、與黏合膜13的周邊部13b的高度差所相當的厚度、即接著劑層12相同或其以上即可。圖2是顯示比接著劑層12更厚的支承構件14’的例子的剖面圖。 The thickness of the support member 14 is the thickness corresponding to the difference in height between the adhesive layer 12 on the release film 11 and the laminated portion of the circular label portion 13a of the adhesive film 13 and the peripheral portion 13b of the adhesive film 13, that is, The agent layer 12 may be the same or above. Fig. 2 is a cross-sectional view showing an example of a support member 14' thicker than the adhesive layer 12.

通過支承構件具有這樣的厚度,在捲繞帶10時,黏合膜13和與其表面重疊的脫模膜11的第2面11b接觸、或不接觸地在它們之間形成空間,因此不會經由黏合膜13而向柔軟的接著劑層12強烈按壓脫模膜11的第2面 11b。由此,可以更有效地抑制轉印痕的產生。 When the support member has such a thickness, when the tape 10 is wound, the adhesive film 13 comes into contact with the second surface 11b of the release film 11 overlapping the surface thereof, or forms a space therebetween without contact, and thus does not pass through the adhesive. The film 13 strongly presses the second side of the release film 11 toward the soft adhesive layer 12. 11b. Thereby, the generation of transfer marks can be more effectively suppressed.

在一個區域r中設置的支承構件14可以將靠近接著層12的一側的厚度設置為最厚。由此,在捲繞為捲筒狀的狀態下,標籤部13a的外側的基於支承構件14的擠壓力低,因此空氣變得容易被排出至標籤部13a的更外側。 The support member 14 provided in one region r can set the thickness of the side close to the adhesive layer 12 to be the thickest. Thereby, in the state of being wound into a roll shape, the pressing force by the support member 14 on the outer side of the label portion 13a is low, and therefore the air is easily discharged to the outside of the label portion 13a.

支承構件14可以沿脫模膜11的長邊方向間斷地或連續地設置,但從更有效地抑制轉印痕的產生的觀點考慮,優選沿基材膜11的長邊方向連續地設置。 The support member 14 may be provided intermittently or continuously along the longitudinal direction of the release film 11, but it is preferably provided continuously along the longitudinal direction of the base film 11 from the viewpoint of more effectively suppressing the generation of transfer marks.

另外,支承構件14從防止晶圓加工用膠帶10的捲繞偏移的觀點考慮,優選對黏合膜13具有某種程度的摩擦係數的材質。由此,可以防止晶圓加工用膠帶10的捲繞偏移,得到可以高速捲繞、使捲繞數增大的效果。 Moreover, it is preferable that the support member 14 has a material having a certain coefficient of friction with respect to the adhesive film 13 from the viewpoint of preventing the winding offset of the wafer processing tape 10 . Thereby, it is possible to prevent the winding deviation of the wafer processing tape 10, and it is possible to obtain an effect that the winding can be performed at a high speed and the number of windings can be increased.

另外,支承構件14與黏合膜13的基材膜之間的靜摩擦係數優選為0.2~2.0,更優選為0.6~1.6。若將晶圓加工用膠帶捲繞為捲筒狀,則在脫模膜11的第1面11a側設置的黏合膜13的周邊部13a與在脫模膜11的第2面11b側設置的支承構件14接觸,因此支承構件14與黏合膜13的基材膜之間的靜摩擦係數小至低於0.2時,在製造時、使用時變得容易發生捲繞偏移而操作性惡化。另一方面,大於2.0時,黏合膜13的基材膜與支承構件14之間的阻力過大,成為製造程序的操作性惡化、或高速捲繞時等彎曲行進的原因。因此,通過將兩者間的靜摩擦係數設置為上述範圍,可以防止晶圓加工用膠帶10的 捲繞偏移,得到使得能高速捲繞、可以使捲繞數增大的效果。 Further, the static friction coefficient between the support member 14 and the base film of the adhesive film 13 is preferably 0.2 to 2.0, and more preferably 0.6 to 1.6. When the wafer processing tape is wound into a roll shape, the peripheral portion 13a of the adhesive film 13 provided on the first surface 11a side of the release film 11 and the support provided on the second surface 11b side of the release film 11 are provided. When the member 14 is in contact with each other, the coefficient of static friction between the support member 14 and the base film of the adhesive film 13 is as small as less than 0.2, and the winding deviation is likely to occur at the time of manufacture and use, and the workability is deteriorated. On the other hand, when it is more than 2.0, the resistance between the base film of the adhesive film 13 and the support member 14 is too large, and the operability of the manufacturing process is deteriorated, or the bending progress is performed at the time of high-speed winding. Therefore, by setting the static friction coefficient between the two to the above range, the wafer processing tape 10 can be prevented. The winding is offset to obtain an effect of enabling high-speed winding and increasing the number of windings.

本發明中,可以依據JIS K7125,通過以下那樣的測定方法得到支承構件14與黏合膜13的基材膜之間的靜摩擦係數。 In the present invention, the static friction coefficient between the support member 14 and the base film of the adhesive film 13 can be obtained by the following measurement method in accordance with JIS K7125.

使分別切割為25mm(寬度)×100mm(長度)的黏合膜13的基材膜與支承構件14的兩膜樣品重合,固定下側的膜。接著,在層疊的膜上載置重量200g的重物作為載荷W,將上側的膜以200mm/min的速度拉伸,測定滑出時的力Fd(g),通過以下的式求出靜摩擦係數(μd)。 The base film of the adhesive film 13 respectively cut into 25 mm (width) × 100 mm (length) was superposed on the two film samples of the support member 14, and the film on the lower side was fixed. Then, a weight of 200 g was placed on the laminated film as a load W, and the upper film was stretched at a speed of 200 mm/min, and the force Fd (g) at the time of slipping was measured, and the static friction coefficient was obtained by the following formula ( Dd).

μd=Fd/W Dd=Fd/W

作為支承構件14,例如可以適宜地使用在樹脂膜基材塗布了黏接著劑的黏接著帶。通過在脫模膜11的第2面11b的兩端部分的既定位置貼附這樣的黏接著帶,可以形成本實施方式的晶圓加工用膠帶10。 As the support member 14, for example, an adhesive tape to which a resin film substrate is coated with an adhesive can be suitably used. The wafer processing tape 10 of the present embodiment can be formed by attaching such an adhesive tape to a predetermined position of both end portions of the second surface 11b of the release film 11.

作為黏接著帶的基材樹脂,只要滿足上述線性膨脹係數的範圍且能耐捲繞壓力就沒有特別限定,但從耐熱性、平滑性、和獲得容易度方面考慮,優選從聚對苯二甲酸乙二醇酯(PET)、聚丙烯、和高密度聚乙烯中選擇。 The base material resin which is an adhesive tape is not particularly limited as long as it satisfies the range of the above linear expansion coefficient and can withstand the winding pressure, but is preferably from polyethylene terephthalate in terms of heat resistance, smoothness, and ease of availability. Selected among glycol esters (PET), polypropylene, and high density polyethylene.

關於黏接著帶的黏合劑的組成和物性,沒有特別限定,只要在帶10的捲繞程序和保管程序中不從脫模膜11 剝離即可。 The composition and physical properties of the adhesive for the adhesive tape are not particularly limited as long as they are not removed from the release film 11 in the winding process and the storage procedure of the tape 10. Peel off.

另外,作為支承構件14,可使用著色後的支承構件。通過使用這樣的著色支承構件,在將晶圓加工用膠帶捲繞為捲筒狀時,可以明確地識別帶的種類。例如,通過根據晶圓加工用膠帶的種類、厚度而使著色支承構件14的顏色不同,可以容易地識別帶的種類、厚度,可以抑制、防止人為的錯誤的發生。 Further, as the support member 14, a colored support member can be used. By using such a colored support member, when the wafer processing tape is wound into a roll shape, the type of the tape can be clearly recognized. For example, by changing the color of the coloring support member 14 depending on the type and thickness of the tape for wafer processing, the type and thickness of the tape can be easily recognized, and occurrence of human error can be suppressed and prevented.

[實施例] [Examples]

接著,對本發明的實施例進行說明,但本發明不限於這些實施例。 Next, embodiments of the invention will be described, but the invention is not limited to the embodiments.

(1)黏合膜的製作 (1) Production of adhesive film

(黏合膜1A) (adhesive film 1A)

在溶劑甲苯400g中適當調整滴下量而滴入丙烯酸正丁酯128g、丙烯酸-2-乙基己酯307g、甲基丙烯酸甲酯67g、甲基丙烯酸1.5g、作為聚合引發劑的過氧化苯甲醯的混合液,調整反應溫度和反應時間,得到具有官能團的化合物(1)的溶液。 The amount of dripping was appropriately adjusted to 400 g of the solvent toluene, and 128 g of n-butyl acrylate, 307 g of 2-ethylhexyl acrylate, 67 g of methyl methacrylate, 1.5 g of methacrylic acid, and benzoic acid peroxide as a polymerization initiator were added dropwise. The reaction mixture and the reaction time were adjusted to obtain a solution of the compound (1) having a functional group.

接著在該聚合物溶液中,適當調整滴下量而加入作為具有放射線固化性碳-碳雙鍵和官能團的化合物(2)的、另行由甲基丙烯酸和乙二醇合成的甲基丙烯酸-2-羥基乙酯2.5g、作為阻聚劑的氫醌並調整反應溫度和反應時間,得到具有放射線固化性碳-碳雙鍵的化合物(A)的溶液。 接著,在化合物(A)溶液中相對於化合物(A)溶液中的化合物(A)溶液中的化合物(A)100質量份加入作為多異氰酸酯(B)的日本聚氨酯公司制:coronate L 1質量份、作為光聚合引發劑的日本汽巴嘉基公司制:Irgacure-184 0.5質量份、作為溶劑的乙酸乙酯150質量份並混合,製備了放射線固化性的黏合劑組合物。 Next, in the polymer solution, the amount of the dropwise addition is appropriately adjusted, and methacrylic acid-2- which is separately synthesized from methacrylic acid and ethylene glycol, which is a compound (2) having a radiation-curable carbon-carbon double bond and a functional group, is added. 2.5 g of hydroxyethyl ester, hydroquinone as a polymerization inhibitor, and the reaction temperature and reaction time were adjusted to obtain a solution of the compound (A) having a radiation curable carbon-carbon double bond. Next, in the solution of the compound (A), 100 parts by mass of the compound (A) in the solution of the compound (A) in the solution of the compound (A) is added to a Japanese polyurethane company as a polyisocyanate (B): coronate L 1 part by mass. A radiation-curable adhesive composition was prepared by mixing with 0.5 parts by mass of Irgacure-184 and 150 parts by mass of ethyl acetate as a solvent, which were prepared as a photopolymerization initiator.

接著,在厚度100μm的乙烯-乙酸乙烯酯共聚物基材膜以乾燥膜厚為20μm的方式塗敷製備的黏合劑層組合物,在110℃乾燥3分鐘,製作了黏合膜1A。 Next, the prepared adhesive layer composition was applied to the ethylene-vinyl acetate copolymer base film having a thickness of 100 μm so as to have a dry film thickness of 20 μm, and dried at 110 ° C for 3 minutes to prepare an adhesive film 1A.

(2)脫模膜 (2) release film

使用了以下所示的脫模膜2A。 The release film 2A shown below was used.

脫模膜2A:厚度38μm的脫模處理後的聚對苯二甲酸乙二醇酯膜 Release film 2A: release-treated polyethylene terephthalate film having a thickness of 38 μm

(3)接著劑層的形成 (3) Formation of an adhesive layer

(接著劑層3A) (adhesive layer 3A)

在包含作為環氧樹脂的甲酚酚醛清漆(cresol novolac)型環氧樹脂(環氧當量197,分子量1200,軟化點70℃)50質量份、作為矽烷偶聯劑的γ-巰基丙基三甲氧基矽烷1.5質量份、γ-醯基丙基三乙氧基矽烷3質量份、平均粒徑16nm的二氧化矽填料30質量份的組合物中加入環己酮並攪拌混合,進一步使用珠磨機混練90分鐘。 50 parts by mass of a cresol novolac type epoxy resin (epoxy equivalent 197, molecular weight 1200, softening point 70 ° C) as an epoxy resin, γ-mercaptopropyltrimethoxide as a decane coupling agent 1.5 parts by mass of decane, 3 parts by mass of γ-mercaptopropyltriethoxy decane, and 30 parts by mass of a cerium oxide filler having an average particle diameter of 16 nm, cyclohexanone was added and stirred, and further, a bead mill was used. Mix for 90 minutes.

在其中加入丙烯酸類樹脂(質均分子量:80萬,玻 璃化轉變溫度-17℃)100質量份、作為6官能丙烯酸酯單體的二季戊四醇六丙烯酸酯5質量份、作為固化劑的六亞甲基二異氰酸酯的加合體0.5質量份、Curezol 2PZ(四國化成(株)制商品名,2-苯基咪唑)2.5質量份,攪拌混合,真空脫氣,得到接著劑。 Adding an acrylic resin to it (mass average molecular weight: 800,000, glass 100 parts by mass of a glass transition temperature of -17 ° C), 5 parts by mass of dipentaerythritol hexaacrylate as a 6-functional acrylate monomer, 0.5 parts by mass of an adduct of hexamethylene diisocyanate as a curing agent, and Curezol 2PZ (four 2.5 parts by mass of a product name of 2-Phenylimidazole manufactured by Kokusai Kasei Co., Ltd., stirred and mixed, and deaerated under vacuum to obtain an adhesive.

在脫模膜2A上塗布上述接著劑,在110℃加熱乾燥1分鐘,形成膜厚為20μm的B階段狀態(熱固性樹脂的固化中間狀態)的塗膜,在脫模膜2A上形成接著劑層3A,冷藏保管。 The above-mentioned adhesive was applied onto the release film 2A, and dried by heating at 110 ° C for 1 minute to form a coating film having a film thickness of 20 μm in a B-stage state (solidified state of the thermosetting resin), and an adhesive layer was formed on the release film 2A. 3A, cold storage.

(接著劑層3B) (adhesive layer 3B)

在脫模膜2A上塗布上述接著劑,在110℃加熱乾燥1分鐘,形成膜厚為60μm的B階段狀態(熱固性樹脂的固化中間狀態)的塗膜,在脫模膜2A上形成接著劑層3B,冷藏保管。 The above-mentioned adhesive was applied onto the release film 2A, and dried by heating at 110 ° C for 1 minute to form a coating film having a film thickness of 60 μm in a B-stage state (solidified state of the thermosetting resin), and an adhesive layer was formed on the release film 2A. 3B, cold storage.

(接著劑層3C) (adhesive layer 3C)

在脫模膜2A上塗布上述接著劑,在110℃加熱乾燥1分鐘,形成膜厚為120μm的B階段狀態(熱固性樹脂的固化中間狀態)的塗膜,在脫模膜2A上形成接著劑層3C,冷藏保管。 The above-mentioned adhesive was applied onto the release film 2A, and dried by heating at 110 ° C for 1 minute to form a coating film having a film thickness of 120 μm in a B-stage state (solidified state of the thermosetting resin), and an adhesive layer was formed on the release film 2A. 3C, storage in cold storage.

(4)支承構件的製作 (4) Production of supporting members

(支承構件4A) (support member 4A)

將丙烯酸類樹脂(質均分子量:60萬,玻璃化轉變溫度-20℃)100質量份、作為固化劑的多異氰酸酯化合物(日本聚氨酯(株)制,商品名:coronate L)10質量份混合而得到黏合劑組合物。 100 parts by mass of an acrylic resin (mass average molecular weight: 600,000, glass transition temperature: -20 ° C), and 10 parts by mass of a polyisocyanate compound (manufactured by Nippon Polyurethane Co., Ltd., trade name: coronate L) as a curing agent were mixed. A binder composition is obtained.

將上述黏合劑組合物以乾燥膜厚為20μm的方式塗敷於厚度40μm的低密度聚乙烯膜,在110℃乾燥3分鐘,將得到的黏接著帶切斷為寬度10mm,製作了支承構件4A。 The pressure-sensitive adhesive composition was applied to a low-density polyethylene film having a thickness of 40 μm so as to have a dry film thickness of 20 μm, dried at 110 ° C for 3 minutes, and the obtained adhesive tape was cut into a width of 10 mm to prepare a support member 4A. .

(支承構件4B) (support member 4B)

除了將上述得到的黏接著帶切斷為寬度15mm以外,與支承構件4A同樣地,製成了支承構件4B。 The support member 4B was produced in the same manner as the support member 4A except that the adhesive tape obtained above was cut to have a width of 15 mm.

(支承構件4C) (support member 4C)

除了將上述得到的黏接著帶切斷為寬度25mm以外,與支承構件4A同樣地,製成了支承構件4C。 The support member 4C was produced in the same manner as the support member 4A except that the adhesive tape obtained above was cut to have a width of 25 mm.

(支承構件4D) (support member 4D)

在厚度40μm的低密度聚乙烯膜以乾燥膜厚為32μm的方式塗敷上述黏合劑組合物,在110℃乾燥3分鐘,將得到的黏接著帶切斷為寬度10mm,製作了支承構件4D。 The adhesive composition was applied to a low-density polyethylene film having a thickness of 40 μm so as to have a dry film thickness of 32 μm, dried at 110 ° C for 3 minutes, and the obtained adhesive tape was cut into a width of 10 mm to prepare a support member 4D.

(支承構件4E) (support member 4E)

除了將上述得到的黏接著帶切斷為寬度15mm以外, 與支承構件4D同樣地,製成了支承構件4E。 Except that the adhesive tape obtained above was cut to a width of 15 mm, A support member 4E is produced in the same manner as the support member 4D.

(支承構件4F) (support member 4F)

除了將上述得到的黏接著帶切斷為寬度25mm以外,與支承構件4D同樣地,製成了支承構件4F。 The support member 4F was produced in the same manner as the support member 4D except that the adhesive tape obtained above was cut to have a width of 25 mm.

(支承構件4G) (support member 4G)

在厚度100μm的聚對苯二甲酸乙二醇酯膜以乾燥膜厚為30μm的方式塗敷上述黏合劑組合物,在110℃乾燥3分鐘,將得到的黏接著帶切斷為寬度15mm,製作了支承構件4G。 The above-mentioned adhesive composition was applied to a polyethylene terephthalate film having a thickness of 100 μm so as to have a dry film thickness of 30 μm, dried at 110 ° C for 3 minutes, and the obtained adhesive tape was cut into a width of 15 mm to prepare. The support member 4G.

(支承構件4H) (support member 4H)

除了將上述得到的黏接著帶切斷為寬度25mm以外,與支承構件4G同樣地,製成了支承構件4H。 The support member 4H was produced in the same manner as the support member 4G except that the adhesive tape obtained above was cut to have a width of 25 mm.

(實施例1) (Example 1)

使冷藏保管後的形成有接著劑層3A的脫模膜2A恢復至常溫,對於接著劑層,以向脫模膜的切入深度為10μm以下的方式調整而進行了直徑220mm的圓形預切割加工。之後,除去接著劑層的不需要部分,以使黏合膜1A的黏合劑層與接著劑層接觸的方式,在室溫層壓脫模膜2A。然後,對於黏合膜1A,以向脫模膜的切入深度為10μm以下的方式調節而以與接著劑層同心圓狀進行了直 徑290mm的圓形預切割加工。接著,在脫模膜2A的與設置了接著劑層和黏合膜的第1面相反的第2面、且在脫模膜2A的短邊方向兩端部的區域r隔開10mm的相互間隔貼合支承構件4A,製作了具有圖1所示的結構的實施例1的晶圓加工用膠帶。 The release film 2A in which the adhesive layer 3A was formed after the storage was stored was returned to normal temperature, and the adhesive layer was adjusted so that the depth of the release film was 10 μm or less, and a circular pre-cutting process of 220 mm in diameter was performed. . Thereafter, the unnecessary portion of the adhesive layer is removed, and the release film 2A is laminated at room temperature so that the adhesive layer of the adhesive film 1A comes into contact with the adhesive layer. Then, the adhesive film 1A is adjusted so as to have a depth of cut of 10 μm or less to the release film, and is straightened concentrically with the adhesive layer. Circular pre-cutting with a diameter of 290mm. Then, the second surface opposite to the first surface on which the adhesive layer and the adhesive film are provided on the release film 2A, and the region r at both end portions in the short-side direction of the release film 2A are spaced apart from each other by 10 mm. The wafer processing tape of Example 1 having the structure shown in Fig. 1 was produced by the joint supporting member 4A.

(實施例2) (Example 2)

除了使用支承構件4G來代替支承構件4A、將支承構件間的間隔設置為5mm以外,與實施例1同樣地,製作了實施例2的晶圓加工用膠帶。 The wafer processing tape of Example 2 was produced in the same manner as in Example 1 except that the support member 4G was used instead of the support member 4A and the interval between the support members was set to 5 mm.

(實施例3) (Example 3)

除了使用支承構件4D來代替支承構件4A、使用接著劑層3B來代替接著劑層3A以外,與實施例1同樣地,製作了實施例3的晶圓加工用膠帶。 A wafer processing tape of Example 3 was produced in the same manner as in Example 1 except that the support member 4D was used instead of the support member 4A and the adhesive layer 3B was used instead of the adhesive layer 3A.

(實施例4) (Example 4)

除了使用支承構件4G來代替支承構件4D、將支承構件間的間隔設置為5mm以外,與實施例3同樣地,製作了實施例4的晶圓加工用膠帶。 The wafer processing tape of Example 4 was produced in the same manner as in Example 3 except that the support member 4G was used instead of the support member 4D and the interval between the support members was set to 5 mm.

(實施例5) (Example 5)

除了使用接著劑層3C來代替接著劑層3B以外,與實施例4同樣地,製作了實施例5的晶圓加工用膠帶。 A wafer processing tape of Example 5 was produced in the same manner as in Example 4 except that the adhesive layer 3C was used instead of the adhesive layer 3B.

(實施例6) (Example 6)

除了在靠近接著劑層一側使用支承構件G、在端部側使用支承構件E以外,與實施例5同樣地,製作了實施例6的晶圓加工用膠帶。 The wafer processing tape of Example 6 was produced in the same manner as in Example 5 except that the support member G was used in the vicinity of the adhesive layer and the support member E was used on the end side.

(比較例1) (Comparative Example 1)

使冷藏保管後的形成有接著劑層3A的脫模膜2A恢復至常溫,對於接著劑層,以向脫模膜的切入深度為10μm以下的方式調整而進行了直徑220mm的圓形預切割加工。之後,除去接著劑層的不需要部分,以使黏合膜1A的黏合劑層與接著劑層接觸的方式,在室溫層壓脫模膜2A。然後,對於黏合膜1A,以向脫模膜的切入深度為10μm以下的方式調節而以與接著劑層同心圓狀進行直徑290mm的圓形預切割加工,留下圓形標籤部和周邊部,除去了其他不需要部分。接著,在脫模膜2A的與設置了接著劑層和黏合膜的第1面相反的第2面、且在脫模膜2A的短邊方向兩端部分別貼合一個支承構件4C,製作了現有專利文獻1的具有圖1所示的結構的比較例1的晶圓加工用膠帶。 The release film 2A in which the adhesive layer 3A was formed after the storage was stored was returned to normal temperature, and the adhesive layer was adjusted so that the depth of the release film was 10 μm or less, and a circular pre-cutting process of 220 mm in diameter was performed. . Thereafter, the unnecessary portion of the adhesive layer is removed, and the release film 2A is laminated at room temperature so that the adhesive layer of the adhesive film 1A comes into contact with the adhesive layer. Then, the adhesive film 1A is adjusted so as to have a depth of cut to the release film of 10 μm or less, and a circular pre-cut process having a diameter of 290 mm is concentrically formed with the adhesive layer, leaving a circular label portion and a peripheral portion. Removed other unwanted parts. Then, one support member 4C was bonded to the second surface of the release film 2A opposite to the first surface on which the adhesive layer and the adhesive film were provided, and the support member 4C was bonded to both end portions of the release film 2A in the short-side direction. The tape for wafer processing of Comparative Example 1 having the structure shown in FIG. 1 of Patent Document 1 is known.

(比較例2) (Comparative Example 2)

除了使用接著劑層3B來代替接著劑層3A以外,與比較例1同樣地,製作了比較例2的晶圓加工用膠帶。 A wafer processing tape of Comparative Example 2 was produced in the same manner as in Comparative Example 1, except that the adhesive layer 3B was used instead of the adhesive layer 3A.

(比較例3) (Comparative Example 3)

除了使用支承構件4H來代替支承構件4C、使用接著劑層3B來代替接著劑層3A以外,與比較例1同樣地,製作了比較例3的晶圓加工用膠帶。 A wafer processing tape of Comparative Example 3 was produced in the same manner as in Comparative Example 1, except that the support member 4H was used instead of the support member 4C and the adhesive layer 3B was used instead of the adhesive layer 3A.

(比較例4) (Comparative Example 4)

除了使用支承構件4H來代替支承構件4C、使用接著劑層3C來代替接著劑層3A以外,與比較例1同樣地,製作了比較例4的晶圓加工用膠帶。 A wafer processing tape of Comparative Example 4 was produced in the same manner as in Comparative Example 1, except that the support member 4H was used instead of the support member 4C and the adhesive layer 3C was used instead of the adhesive layer 3A.

(比較例5) (Comparative Example 5)

除了不設置支承構件以外,與比較例2同樣地,製作了比較例5的晶圓加工用膠帶。 A wafer processing tape of Comparative Example 5 was produced in the same manner as in Comparative Example 2 except that the support member was not provided.

[標籤痕跡的抑制性的評價] [Evaluation of the inhibition of label marks]

以圓形形狀的黏合膜的數目為300張的方式,將實施例和比較例的晶圓加工用膠帶捲繞為捲筒狀,製作了晶圓加工用膠帶捲筒。在冰箱內(5℃)保管得到的晶圓加工用膠帶捲筒1個月。之後,使晶圓加工用膠帶捲筒恢復至室溫後解開捲筒,目視觀察標籤痕跡的有無,基於以下的評價基準,以○、△、×的3個等級評價了晶圓加工用膠帶的轉印痕的抑制性。在表1和表2中示出結果。 The wafer processing tapes of the examples and the comparative examples were wound into a roll shape so that the number of the circular-shaped adhesive films was 300 sheets, and a tape roll for wafer processing was produced. The obtained wafer processing tape roll was stored in a refrigerator (5 ° C) for one month. After that, the wafer processing tape roll was returned to room temperature, and the roll was unwound, and the presence or absence of the label mark was visually observed. The wafer processing tape was evaluated in three levels of ○, Δ, and × based on the following evaluation criteria. The inhibition of the transfer marks. The results are shown in Tables 1 and 2.

○(良品):從各種角度目視觀察也無法確認標籤痕 跡 ○ (good product): It is impossible to visually observe the label marks from various angles. trace

△(容許品):可以確認標籤痕跡但沒到對半導體裝置的加工程序造成影響的程度 △ (allowable product): It is possible to confirm the label trace but not to affect the processing procedure of the semiconductor device.

×(不良品):可以確認存在對半導體裝置的加工程序帶來影響的可能性的標籤痕跡 × (defective product): It can be confirmed that there is a label trace that may affect the processing procedure of the semiconductor device.

[空氣的捲入的抑制性的評價] [Evaluation of inhibition of air entrapment]

以圓形形狀的黏合膜的數目為200張的方式,將實施例和比較例的晶圓加工用膠帶捲繞為捲筒狀,製作了晶圓加工用膠帶捲筒。將得到的晶圓加工用膠帶捲筒放入包裝袋,在冰箱內(5℃)保管1個月後,在帶表面成為-50℃的乾冰氣氛下保管3天。之後,使晶圓加工用膠帶捲筒恢復至常溫後將包裝袋開封,解開捲筒,目視觀察空氣的有無,將空氣被排出至圓形標籤部的外側、在接著劑層與黏合膜的圓形標籤部之間沒有空氣的捲入的評價為○(良品),將空氣沒有完全排出至圓形標籤部的外側而一部份殘留、但在接著劑層與黏合膜的圓形標籤部之間沒有空氣的捲入的評價為△(容許品),將在接著劑層與黏合膜的圓形標籤部之間有空氣的捲入的評價為×(不良品),評價了晶圓加工用膠帶的空氣的捲入的抑制性。在表1和表2中示出結果。 The wafer processing tapes of the examples and the comparative examples were wound into a roll shape so that the number of the circular-shaped adhesive films was 200, and a tape roll for wafer processing was produced. The obtained roll of the wafer processing tape was placed in a packaging bag, stored in a refrigerator (5 ° C) for one month, and then stored in a dry ice atmosphere having a surface of -50 ° C for 3 days. After that, the wafer processing tape roll is returned to normal temperature, the package bag is unsealed, the roll is unwound, and the presence or absence of air is visually observed, and the air is discharged to the outside of the circular label portion, at the adhesive layer and the adhesive film. The evaluation of the absence of air between the circular label portions is ○ (good), and the air is not completely discharged to the outside of the circular label portion, but a part remains, but in the circular label portion of the adhesive layer and the adhesive film. The evaluation of the entrapment of air between the adhesive layer and the circular label portion of the adhesive film was evaluated as × (defective product), and the wafer processing was evaluated. Inhibition of entrapment of air with tape. The results are shown in Tables 1 and 2.

如表1所示,實施例1~6所涉及的晶圓加工用膠帶,在脫模膜的與第1面相反的第2面上、且在比接著劑層的在脫模膜的短邊方向上的端部更靠外側的一個區域中在脫模膜的短邊方向設置有多個支承構件,因此標籤 痕跡的抑制性、空氣的捲入的抑制性都成為良好的結果。在靠近接著層的一側的支承構件的厚度最厚的實施例6中,空氣的捲入的抑制性中成為特別優異的結果。 As shown in Table 1, the tape for wafer processing according to Examples 1 to 6 is on the second surface of the release film opposite to the first surface and on the short side of the release film on the release film. a plurality of support members are disposed in a short side of the release film in a region on the outer side of the end portion in the direction, and thus the label The suppression of the traces and the inhibition of the entrapment of air are all good results. In Example 6 in which the thickness of the support member on the side close to the adhesive layer was the thickest, the suppression of the entrapment of air was particularly excellent.

與此相對,在比接著劑層的在脫模膜的短邊方向上的端部更靠外側的一個區域中在脫模膜的短邊方向僅設置了1個支承構件的比較例1~4所涉及的晶圓加工用膠帶,如表2所示,空氣的捲入的抑制性成為差的結果。沒有設置支承構件的比較例5所涉及的晶圓加工用膠帶在空氣的捲入的抑制性中成為優異的結果,但標籤痕跡的抑制性中成為差的結果。 On the other hand, in Comparative Example 1 to 4 in which only one support member was provided in the short-side direction of the release film in one region outside the end portion of the adhesive layer in the short-side direction of the release film. As shown in Table 2, the tape for wafer processing involved was inferior in suppressing the entrapment of air. The tape for wafer processing according to the comparative example 5 in which the support member is not provided is excellent as a result of suppressing the entrapment of air, but the suppression of the label trace is a poor result.

10‧‧‧晶圓加工用膠帶 10‧‧‧ Wafer processing tape

11‧‧‧脫模膜 11‧‧‧ release film

11a‧‧‧第1面 11a‧‧‧1st

11b‧‧‧第2面 11b‧‧‧2nd

12‧‧‧接著劑層 12‧‧‧ adhesive layer

13‧‧‧黏合膜 13‧‧‧Adhesive film

13a‧‧‧圓形標籤部 13a‧‧‧Circular label

13b‧‧‧周邊部 13b‧‧‧ peripherals

14‧‧‧支承構件 14‧‧‧Support members

Claims (3)

一種晶圓加工用膠帶,其特徵在於:具有:長的脫模膜;接著劑層,在前述脫模膜的第1面上設置、且具有既定的平面形狀,黏合膜,具有標籤部和包圍前述標籤部的外側的周邊部,前述標籤部以覆蓋前述接著劑層、且在前述接著劑層的周圍與前述脫模膜接觸的方式設置,並且具有既定的平面形狀;以及支承構件,設置在前述脫模膜的與設置有前述接著劑層和黏合膜的第1面相反的第2面上,且在比前述接著劑層的在前述脫模膜的短邊方向上的端部更靠外側的一個區域中、沿前述脫模膜的短邊方向設置有多個。 A tape for processing a wafer, comprising: a long release film; an adhesive layer provided on a first surface of the release film and having a predetermined planar shape, an adhesive film having a label portion and surrounding a peripheral portion of the outer side of the label portion, the label portion is provided to cover the adhesive layer, and is provided in contact with the release film around the adhesive layer, and has a predetermined planar shape; and the support member is disposed at The second surface of the release film opposite to the first surface on which the adhesive layer and the adhesive film are provided is on the outer side of the end portion of the adhesive layer in the short-side direction of the release film. A plurality of regions are provided in one region along the short side direction of the release film. 根據申請專利範圍第1項的晶圓加工用膠帶,其中,在前述一個區域中設置的前述支承構件中,靠近前述接著層的一側的厚度最厚。 The tape for wafer processing according to the first aspect of the invention, wherein the thickness of the side of the support member provided in the one region is the thickest. 根據申請專利範圍第1或2項的晶圓加工用膠帶,其中,前述支承構件的各自的寬度為10~15mm,在前述一個區域中設置的前述支承構件之間的間隔為5mm以上。 The tape for wafer processing according to claim 1 or 2, wherein each of the support members has a width of 10 to 15 mm, and an interval between the support members provided in the one region is 5 mm or more.
TW104140173A 2014-12-04 2015-12-01 Wafer processing tape TWI577777B (en)

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