JP6529650B2 - Wafer processing tape - Google Patents

Description

  The present invention relates to a wafer processing tape manufactured by precut processing, and more particularly to a wafer processing tape having a dicing die bonding film having two functions of a dicing tape and a die bonding film.

  Recently, a dicing tape for fixing a semiconductor wafer when cutting and separating (dicing) the semiconductor wafer into individual chips, and for bonding the cut semiconductor chip to a lead frame, a package substrate or the like, or In a package, a dicing die bonding tape having a combination of two functions with a die bonding film (also referred to as a die attach film) for laminating and bonding semiconductor chips has been developed.

  Among such dicing / die bonding tapes, there are those which have been subjected to pre-cut processing in consideration of workability such as attachment to a wafer and attachment to a ring frame at the time of dicing.

  An example of a precut processed dicing die bonding film is shown in FIG. 4 and FIG. 4, 5 (a) and 5 (b) are a schematic view, a plan view and a sectional view, respectively, of the wafer processing tape 30 provided with the dicing die bonding film 35. As shown in FIG. The wafer processing tape 30 is composed of a release film 31, an adhesive layer 32, and an adhesive film 33. The adhesive layer 32 is processed into a circular shape corresponding to the shape of the wafer, and has a circular label shape. The adhesive film 33 is obtained by removing the peripheral region of the circular portion corresponding to the shape of the ring frame for dicing, and as shown in the drawing, the circular label portion 33a and the peripheral portion 33b surrounding the outer side thereof Have. The adhesive layer 32 and the circular label portion 33a of the adhesive film 33 are laminated with their centers aligned, and the circular label portion 33a of the adhesive film 33 covers the adhesive layer 32 and is released around the periphery thereof. The film 31 is in contact. Then, the dicing / die bonding film 35 is configured by the laminated structure including the adhesive layer 32 and the circular label portion 33 a of the adhesive film 33.

  When dicing the wafer, the release film 31 is peeled off from the adhesive layer 32 and the adhesive film 33 in the laminated state, and the back surface of the semiconductor wafer W is pasted on the adhesive layer 32 as shown in FIG. The dicing ring frame R is adhesively fixed to the outer peripheral portion of the circular label portion 33 a of the adhesive film 33. In this state, the semiconductor wafer W is diced, and then the semiconductor chip is picked up. At this time, the semiconductor chip is picked up with the adhesive layer 32 attached to the back surface. The adhesive layer 32 attached to the back surface of the semiconductor chip functions as a die bonding film when subsequently bonding the semiconductor chip to a lead frame, a package substrate, or another semiconductor chip.

  By the way, as shown in FIGS. 4 and 5, in the wafer processing tape 30 as described above, the portion where the adhesive layer 32 and the circular label portion 33a of the adhesive film 33 are laminated is thicker than the other portions. . Also, generally, the angle between the surface of the adhesive layer 32 and the adhesive layer side edge 32 a extending from the surface of the adhesive layer 32 to the release film 31 is formed at a right angle. For this reason, when the product is wound into a roll, the step difference between the laminated portion of the adhesive layer 32 and the circular label portion 33a of the adhesive film 33 and the peripheral portion 33a of the adhesive film 33 overlap to make a flexible adhesive. A phenomenon in which a level difference is transferred to the surface of the layer 32, that is, a transfer mark (also called a label mark, a wrinkle or a winding mark) as shown in FIG. 7 occurs. If a transfer mark is generated, a defect may occur during processing of the wafer due to adhesion failure between the adhesive layer and the semiconductor wafer.

On the other hand, flip chip mounting in which a semiconductor element is mounted on a circuit board by a face down bonding method is performed as a mounting method of semiconductor devices, but in recent years, using a tape for wafer processing for this flip chip mounting has been proposed There is. In this case, since the adhesive layer is embedded in the bump electrode of the semiconductor element or the wiring step on the surface of the circuit board, a certain thickness is required. As the adhesive layer becomes thicker, transfer marks derived from the above-described overlapping of the steps become noticeable.

In order to suppress the generation of the above-mentioned transfer marks, it is conceivable to weaken the winding pressure of the film, but in this method, the winding deviation of the product occurs, for example, the film becomes difficult to set on a tape mounter There is a risk that problems will occur during actual use of

  Therefore, in order to suppress the occurrence of label marks as described above, a film having a thickness equal to or greater than the total film thickness of the adhesive layer and the adhesive film on the outside of the adhesive layer and the adhesive film on the release substrate An adhesive sheet provided with a support layer having a thickness is disclosed (see, for example, Patent Document 1). The adhesive sheet of Patent Document 1 includes the support layer to disperse or collect the winding pressure applied to the adhesive sheet to the support layer, thereby suppressing the generation of transfer marks.

  Furthermore, in order to suppress the occurrence of label marks as described above, disclosed is a pressure-sensitive adhesive film having an acute angle between the release film and the side edge of the label-like pressure-sensitive adhesive film or the pressure-sensitive adhesive film (See, for example, Patent Document 2).

JP 2007-2173 A JP, 2010-177401, A

  However, in the adhesive sheet of Patent Document 1 described above, the adhesive sheet and the adhesive film on the release substrate are outside the adhesive film and the adhesive film which are required when manufacturing a semiconductor device, etc. Since the support layer is formed, the width of the support layer is limited, the width of the support layer is narrow with respect to the outer diameter of the adhesive layer and the adhesive film, and the problem of suppressing the label mark is not sufficient. It was Also, since the support layer generally does not have tackiness and does not adhere sufficiently to the release substrate (PET film), the narrowest portion of the support layer is lifted from the release substrate, and the wafer is diced to a wafer. At the time of bonding the bonding film, the above-described floating portion is caught by the device, causing a problem that the wafer is damaged.

  Although it is conceivable to widen the width of the support layer, the width of the entire wafer processing tape also widens, making it difficult to use existing equipment. In addition, since the support layer is a portion to be finally discarded, widening the width of the support layer leads to an increase in material cost.

  Moreover, although the adhesive film of the said patent document 2 can suppress the label mark originating in the label side edge part, it was not able to suppress with respect to the level difference mark originating in the level | step difference by the adhesive layer being thick.

  Therefore, an object of the present invention is to imprint marks on the adhesive layer when the wafer processing tape having the dicing die bonding film having the adhesive layer and the adhesive film is wound in a roll on the release film. It is an object of the present invention to provide a wafer processing tape having a dicing / die bonding film capable of sufficiently suppressing the occurrence of

  In order to solve the above problems, a tape for processing a wafer according to the present invention comprises a release film, an adhesive layer having a predetermined planar shape provided on the surface of the release film, and the adhesive layer. And a label portion having a predetermined planar shape provided to contact the release film around the adhesive layer, and a peripheral portion provided to surround the outside of the label portion. A tape for processing a wafer, comprising an adhesive film, wherein the adhesive layer has an adhesive layer surface and an adhesive layer side edge extending from the adhesive layer surface to the release film, the adhesive The agent layer side edge portion is formed such that an angle between the adhesive layer surface and the adhesive layer side edge portion is an obtuse angle, and is inclined with respect to the release film, and the release film The angle with respect to is 4.0 degrees or more and 84 degrees or less Characterized in that it is made.

  In the semiconductor processing tape, preferably, the adhesive layer side edge portion is formed at an angle of 45 degrees to 80 degrees with respect to the release film.

  Further, in order to solve the above problems, the tape for processing a wafer according to the present invention comprises a release film, an adhesive layer having a predetermined planar shape provided on the surface of the release film, and the adhesive A label portion covering a layer and having a predetermined planar shape provided to contact the release film around the adhesive layer, and a peripheral portion provided to surround the outer side of the label portion A tape for processing a wafer including an adhesive film having the adhesive layer, the adhesive layer having an adhesive layer surface, and an adhesive layer side edge extending from the adhesive layer surface to the release film, The adhesive layer has an adhesive layer surface, and an adhesive layer side edge portion smoothly curved and extended from the adhesive layer surface to the release film.

  According to the tape for processing a wafer of the present invention, when the tape for processing a wafer having an adhesive layer and an adhesive film is wound in a roll shape on a release film, generation of transfer marks in the adhesive layer is sufficient. Can be suppressed.

(A) is a top view of the tape for wafer processing which concerns on 1st Embodiment, (B) is AA sectional drawing. It is the L section enlarged view of FIG. (A) is the L section enlarged view in the tape for wafer processing which concerns on 2nd Embodiment, (B) is the modification. It is a schematic diagram of the conventional tape for wafer processing. (A) is a top view of the conventional tape for wafer processing, (b) is BB sectional drawing. It is sectional drawing which shows the state to which the dicing die bonding film and the ring frame for dicing were bonded together. It is a schematic diagram for demonstrating the malfunction of the conventional tape for a wafer process.

Hereinafter, embodiments of the present invention will be described in detail based on the drawings. FIG. 1 is a view for explaining a wafer processing tape according to the first present embodiment, and FIG. 1 (A) is a plan view of the wafer processing tape according to the first embodiment, and FIG. It is the sectional view on the AA line of FIG. 1 (A). FIG. 2 is a view for explaining an adhesive layer side edge portion, and is an enlarged view of a portion L in FIG.
FIG. 3 is a view for explaining the adhesive layer side edge of the tape for wafer processing according to the second embodiment, and FIG. 3 (A) is an enlarged view of an L portion, and FIG. 3 (B) is a modified example thereof. It is.

First Embodiment
The wafer processing tape 10 according to the first embodiment, as shown in FIG. 1 and FIG. 2, comprises a release film 11, an adhesive layer 12 and an adhesive film 13. The adhesive layer 12 is processed into a circular shape corresponding to the shape of the wafer, and has a circular label shape. The adhesive film 13 is obtained by removing the peripheral region of the circular portion corresponding to the shape of the ring frame for dicing, and as shown in the drawing, the circular label portion 13a and the peripheral portion 13b surrounding the outside thereof. Have. The adhesive layer 12 and the circular label portion 13a of the adhesive film 13 are laminated with their centers aligned, and the circular label portion 13a of the adhesive film 13 covers the adhesive layer 12 and is released around the periphery thereof. It is in contact with the film 11. A dicing / die bonding film 15 is configured by a laminated structure including the adhesive layer 12 and the circular label portion 13 a of the adhesive film 13.

(Adhesive layer side edge)
Then, as shown by the L portion in the cross-sectional view (FIG. 1B) of the wafer processing tape, the adhesive layer 12 is formed with an edge having a shape inclined with respect to the release film 11. Specifically, as shown in FIG. 2, the adhesive layer 12 has an adhesive layer surface 12 a and an adhesive layer side edge 12 b extending from the adhesive layer surface 12 a to the release film 11. Here, the adhesive layer side edge 12 b and the adhesive layer surface 12 a are formed to have an obtuse angle, and the adhesive layer side edge 12 b is inclined with respect to the release film 11. Is formed.

  Therefore, according to the wafer processing tape 10 according to the first embodiment, the adhesive layer side edge 12 b is such that the angle between the adhesive layer surface 12 a and the adhesive layer side edge 12 b is an obtuse angle. Since it is formed to be inclined with respect to the mold release film 11, when the wafer processing tape 10 is wound up in a roll shape, a step in the label portion 13a caused by the presence of the adhesive layer 12 The pressure applied to the adhesive layer 12 can be dispersed. Therefore, when the wafer processing tape 10 is wound in a roll, generation of transfer marks on the adhesive layer 12 can be sufficiently suppressed.

(Angle between adhesive layer side edge and mold release film)
With respect to the angle X between the adhesive layer side edge 12 b and the release film 11, the adhesive layer side edge 12 b with respect to the release film 11 is such that X is 4.0 degrees or more and 84 degrees or less. It is preferable to form.

  As the angle X between the adhesive layer side edge 12 b and the release film 11 is smaller, generation of transfer marks on the adhesive layer 12 is suppressed when the tape for wafer processing 10 is rolled up. It can produce an effect. However, if the angle X is too small, the thickness of the adhesive layer 12 in the area to be bonded to the wafer becomes thin. Therefore, when the wafer is attached to the adhesive layer 12 and diced, the cutting depth changes depending on the position, which makes it difficult to perform dicing with a uniform depth.

  With respect to a wafer processing tape in which the thickness d of the adhesive layer 12 shown in FIG. 2 is 0.01 mm to 0.200 mm, uniform dicing becomes difficult when the angle X is less than 4.0 degrees, but the angle X When the angle is 4.0 degrees or more, the thickness of the adhesive layer 12 attached to the wafer becomes substantially constant, and uniform dicing can be performed.

  As a method of forming the adhesive layer side edge portion 12b, when the adhesive layer 12 is punched into a circular shape of a predetermined size, a blade having a predetermined angle is used as a blade used for punching, and this blade is used as an adhesive Preferred is a method of forming the adhesive layer side edge 12b by pressing the layer surface 12a in the vertical direction. Here, when the angle of the tip of the blade exceeds 45 degrees with respect to the vertical direction (pressing direction), it is difficult to insert the blade into the adhesive layer, so the angle of the tip of the blade is perpendicular (pressing Orientation should be less than 45 degrees. The angle X between the release layer 11 and the adhesive layer side edge 12b punched out using a blade whose tip angle is less than 45 degrees is 45 degrees or more, so the adhesive layer side edge 12b It is preferable that the angle X between and the release film 11 be 45 degrees or more.

  The adhesive layer side edge 12b having an angle X of less than 45 degrees was punched using a blade having a tip angle of less than 45 degrees to form an adhesive layer side edge 12b having an angle X of 45 degrees or more. Thereafter, the side edge portion of the adhesive layer 12 can be manufactured by polishing or heat deformation.

  On the other hand, when the angle X exceeds 84 degrees, it approximates the angle (= 90 degrees) between the adhesive layer side edge 32a of the conventional tape 30 for wafer processing and the release film 31, and the tape for wafer processing is obtained. It is preferable that the angle X be equal to or less than 84 degrees, and more preferably, the angle X be equal to or less than 80 degrees, because generation of transfer marks on the adhesive layer caused by winding in a roll can not be suppressed. .

  Hereafter, each component of the tape for wafer processing concerning this embodiment is demonstrated in detail.

(Release film)
As the release film 11 used for the tape 10 for wafer processing, polyethylene terephthalate (PET) -based, polyethylene-based, and other well-known films such as a film subjected to release treatment can be used. The thickness of the release film is not particularly limited and may be set as appropriate, but is preferably 25 to 50 μm.

(Adhesive layer)
The adhesive layer 12 peels off from the adhesive film 13 and adheres to the chip when picking up the chip after the semiconductor wafer etc. is bonded and diced, and the adhesive when fixing the chip to the substrate or lead frame It is used as Therefore, when picking up the chip, the adhesive layer 12 has peelability that can be peeled off from the adhesive film 13 in a state of being attached to the singulated semiconductor, and when die bonding is further performed. In order to adhesively fix the chip to the substrate or lead frame, the chip must have sufficient adhesion reliability.

  The adhesive layer 12 is obtained by film-forming an adhesive in advance, and, for example, a known polyimide resin, polyamide resin, polyetherimide resin, polyamideimide resin, polyester resin, polyester resin, polyesterimide used for the adhesive Using resin, phenoxy resin, polysulfone resin, polyether sulfone resin, polyphenylene sulfide resin, polyether ketone resin, chlorinated polypropylene resin, acrylic resin, polyurethane resin, epoxy resin, epoxy resin, polyacrylamide resin, melamine resin, etc. or a mixture thereof Can. In order to enhance adhesion to chips and lead frames, it is desirable to add a silane coupling agent or a titanium coupling agent as an additive to the above-described material or a mixture thereof.

  The thickness of the adhesive layer 12 is not particularly limited, but is preferably about 5 to 200 μm in general. The adhesive layer 12 may be laminated on the entire surface of the adhesive film, but it is general to laminate an adhesive film which has been cut (precut) in a shape corresponding to the wafer to be bonded in advance. When an adhesive film corresponding to a wafer is laminated, as shown in FIG. 6, the adhesive layer 12 is present at the portion to which the wafer W is attached, and the adhesive layer is attached to the portion to which the ring frame R for dicing is attached. There is no 12 and only the circular label part 13a of the adhesive film 13 exists. In general, since the adhesive layer 12 hardly peels off from the adherend, the ring frame R can be attached to the adhesive film 13 by using the precut adhesive layer 12 and the ring is removed when peeling off the film after use. The effect of being hard to produce the adhesive residue to flame | frame R is acquired.

(Adhesive film)
The adhesive film 13 has sufficient adhesive strength so that the wafer does not peel off when dicing the wafer, and has low adhesive strength so that it can be easily peeled off from the adhesive layer 12 when picking up the chip after dicing. It is a thing. For example, what provided the adhesive layer in the base film can be used conveniently.

  The base film of the pressure-sensitive adhesive film 13 can be used without being particularly limited as long as it is conventionally known, but in the case of using a radiation-curable material as the pressure-sensitive adhesive layer described later, radiation transparency It is preferable to use one having

  For example, as the material, polyethylene, polypropylene, ethylene-propylene copolymer, polybutene-1, poly-4-methylpentene-1, ethylene-vinyl acetate copolymer, ethylene-ethyl acrylate copolymer, ethylene-acrylic Acid copolymers, ethylene-acrylic acid copolymers, ionomers, etc. homopolymers or copolymers of α-olefins or mixtures thereof, polyurethanes, styrene-ethylene-butene or penten copolymers, polyamide-polyols Thermoplastic elastomers such as copolymers, and mixtures thereof can be listed. The base film may be a mixture of two or more materials selected from these groups, and may be a single layer or a multilayer. The thickness of the base film is not particularly limited and may be set as appropriate, but is preferably 50 to 200 μm.

  It does not specifically limit as resin used for the adhesive layer of the adhesion film 13, The well-known chlorinated polypropylene resin, acrylic resin, polyester resin, polyurethane resin, an epoxy resin etc. which are used for an adhesive are used can do.

  An acrylic pressure-sensitive adhesive, a radiation-polymerizable compound, a photopolymerization initiator, a curing agent and the like are suitably blended with the resin of the pressure-sensitive adhesive layer to prepare the pressure-sensitive adhesive. The thickness of the pressure-sensitive adhesive layer is not particularly limited and may be set as appropriate, but is preferably 5 to 30 μm.

  A radiation polymerizable compound can be blended in the pressure sensitive adhesive layer to facilitate peeling from the adhesive layer by radiation curing. As the radiation polymerizable compound, for example, a low molecular weight compound having at least two photopolymerizable carbon-carbon double bonds in a molecule which can be three-dimensional reticulated by light irradiation is used.

  Specifically, trimethylolpropane triacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxy pentaacrylate, dipentaerythritol hexaacrylate, 1,4-butylene glycol diacrylate, 1,6 hexanediol diacrylate Acrylate, polyethylene glycol diacrylate, oligoester acrylate and the like are applicable.

  In addition to the above acrylate compounds, urethane acrylate oligomers can also be used. Urethane acrylate oligomers include polyol compounds such as polyester type or polyether type, and polyvalent isocyanate compounds (eg, 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diisocyanate). Acrylate or methacrylate having a hydroxyl group (eg, 2-hydroxyethyl) in a terminal isocyanate urethane prepolymer obtained by reacting isocyanate, 1,4-xylylene diisocyanate, diphenylmethane 4, 4-diisocyanate, etc. Acrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl acrylate, 2-hydroxypropyl methacrylate, polyethylene glycol acrylate, polyethylene glycol methacrylate etc.) Obtained by the reaction. The pressure-sensitive adhesive layer may be a mixture of two or more selected from the above resins.

  When a photopolymerization initiator is used, for example, isopropyl benzoin ether, isobutyl benzoin ether, benzophenone, Michler's ketone, chlorothioxanthone, dodecyl thioxanthone, dimethyl thioxanthone, diethyl thioxanthone, benzyl dimethyl ketal, α-hydroxycyclohexyl phenyl ketone, 2-hydroxymethyl phenyl Propane and the like can be used. The blending amount of these photopolymerization initiators is preferably 0.01 to 5 parts by mass with respect to 100 parts by mass of the acrylic copolymer.

Second Embodiment
The wafer processing tape according to the second embodiment is a modified form of the wafer processing tape according to the first embodiment, which has an edge portion in which the adhesive layer 12 is inclined relative to the release film 11. As shown in FIG. 3 (A), the adhesive layer 22 has an adhesive layer side edge 25 which curves smoothly and extends from the adhesive layer surface 24 to the release film 21 with respect to the release film 21. The angle between the adhesive layer side edge 25 and the release film 21 is formed to be 90 degrees.

  FIG. 3B is a modified example of the wafer processing tape according to the second embodiment. Similar to the wafer processing tape according to the second embodiment, it has an adhesive layer side edge 25 ′ extending in an arc shape from the adhesive layer surface 24 ′ to the release film 21. In the modification, it is formed so as to be very small at less than 90 degrees between the adhesive layer side edge 25 ′ and the release film 21.

  The arc shape of the adhesive layer side edges 25 and 25 'is the same as the conventional adhesive layer 32. The side edge of the adhesive layer which has been precut into a rectangular shape in cross sectional view is polished or heat-deformed. It can be produced by applying.

  Therefore, according to the tape 20 for processing a wafer according to the second embodiment and the modified example 20 'thereof, the adhesive layer side edge 25, 25' smoothly from the adhesive layer surface 24, 24 'to the release film 21. The pressure applied to the adhesive layer 22 due to the step in the label portion 23a caused by the presence of the adhesive layer 22 when the wafer processing tape 20, 20 'is wound in a roll shape because it is curved and extended. Can be dispersed. Therefore, when the wafer processing tape 20, 20 'is wound in a roll, generation of a transfer mark on the adhesive layer 22 can be sufficiently suppressed.

  Next, examples of the present invention will be described, but the present invention is not limited to these examples.

A wafer processing tape was prepared as follows. First, after preparing the support substrate (base film) and the pressure-sensitive adhesive composition 1, the above-mentioned pressure-sensitive adhesive composition is coated on the support substrate so that the thickness after drying is 20 μm, at 110 ° C. The adhesive film was made to dry for 3 minutes. Then, an adhesive composition is prepared, and the adhesive composition is applied to a release film consisting of a release-treated polyethylene-terephthalate film so that the thickness after drying is 20 μm, 3 at 110 ° C. After drying for a minute, an adhesive film was formed on the release film.
Then, the adhesive film was cut into a circular label shape by changing the angle X between the adhesive layer side edge and the release film within a certain range, to form an adhesive layer. Furthermore, the adhesive film was cut into the shape shown in FIG. 4, and then the adhesive layer was attached to the adhesive layer side of the adhesive film to prepare a wafer processing tape according to each example and comparative example. . The shape of the tape for wafer processing thus prepared has a width of 290 mm, a diameter of adhesive layer of 220 mm, a diameter of label of 270 mm, and further, the center of the adhesive layer and the label portion on the center line of the tape for wafer processing It formed so that it might overlap. Below, the preparation methods of a support base material, an adhesive composition, and an adhesive composition are shown.

(Preparation of supporting substrate)
Resin beads made of commercially available low density polyethylene (Novatec LL manufactured by Japan Polyethylene Corporation) were melted at 140 ° C., and formed into a long film having a thickness of 100 μm using an extruder.

(Preparation of pressure-sensitive adhesive composition)
First, as a compound (0) having a radiation curable carbon-carbon double bond and a functional group, it is composed of 2-ethylhexyl acrylate, 2-hydroxyethyl acrylate and methyl methacrylate, weight average molecular weight 700,000, glass transition temperature -64 ° C A copolymer compound having a radiation curable carbon-carbon double bond content of 0.9 meq / g was produced. To 100 parts by mass of this compound (0), 3 parts by mass of polyisocyanate compound Coronate L (trade name, made by Nippon Polyurethane Industry Co., Ltd.) as a curing agent is added A radiation-curable pressure-sensitive adhesive composition was obtained by adding 5 parts by mass of trade name.

(Preparation of adhesive composition)
50 parts by weight of cresol novolac epoxy resin (epoxy equivalent 197, molecular weight 1200, softening point 70 ° C.) as epoxy resin, 1.5 parts by weight of γ-mercaptopropyltrimethoxysilane as silane coupling agent, γ-ureidopropyltriethoxysilane To a composition consisting of 3 parts by mass and 30 parts by mass of silica filler having an average particle diameter of 16 nm, cyclohexanone was added, stirred and mixed, and further kneaded using a bead mill for 90 minutes.
100 parts by mass of an acrylic resin (mass average molecular weight: 800,000, glass transition temperature: -17 ° C.), 5 parts by mass of dipentaerythritol hexaacrylate as a hexafunctional acrylate monomer, and 0.5 adduct of hexamethylene diisocyanate as a curing agent A mass part, 2.5 parts by mass of CuaZole 2PZ (trade name, 2-phenylimidazole manufactured by Shikoku Kasei Co., Ltd.) were added, and mixed by stirring and vacuum degassing to obtain an adhesive composition.

(Reference Example 1)
The wafer processing tape has an angle X of 45 degrees between the adhesive layer side edge 12 b and the release film 11.

Example 1
The wafer processing tape has an angle X of 80 degrees between the adhesive layer side edge 12 b and the release film 11.

(Example 2)
The wafer processing tape has an angle X of 84 degrees between the adhesive layer side edge 12 b and the release film 11.

(Example 3)
It is a tape for wafer processing whose angle X between the adhesive layer side edge 12b and the release film 11 is 90 degrees, and the adhesive layer 22 is released from the adhesive layer surface 24 with respect to the release film 21. It is a tape for processing a wafer having an adhesive layer side edge 25 curved and extended smoothly on a film 21.

(Comparative example 1)
The wafer processing tape has an angle X of 90 degrees between the adhesive layer side edge 12 b and the release film 11.

(Comparative example 2)
The wafer processing tape has an angle X of 85 degrees between the adhesive layer side edge 12 b and the release film 11.

The inhibition of transcription marks was evaluated by the evaluation method shown below.
(Evaluation method of suppression of transcription marks)
Using a winding core having an outer diameter of 76.2 mm, 300 sheets of a 290 mm-wide tape for wafer processing were wound at a constant tension of 15 N to form a roll body. Then, the roll body was stored refrigerated at 5 ° C. for 30 days. Thereafter, the adhesive layer was visually observed to determine the presence or absence of wrinkles (transfer marks).

  Table 1 shows the evaluation results. In the table, ○ indicates that no wrinkles were generated, × indicates that wrinkles were generated, and Δ indicates that even if there were wrinkles, the wrinkles were not so large as to involve air during wafer bonding.

  In Example 1 in which the angle X between the adhesive layer side edge portion and the release film is 80 degrees, generation of wrinkles was not confirmed. In Example 2 in which the angle X between the adhesive layer side edge and the release film is a tape for wafer processing having an angle X of 84 degrees, although it was faint, wrinkles were confirmed, air was not It was not enough to get caught. On the other hand, in Comparative Example 1 and Comparative Example 2 in which the angle X between the adhesive layer side edge and the release film is a tape for wafer processing having 85 degrees or more, wrinkles were generated.

  As mentioned above, according to the tape for wafer processing which concerns on this invention, with respect to the mold release film, the adhesive film side edge part makes the angle between the adhesive layer surface and the adhesive layer side edge part an obtuse angle. Since the wafer processing tape is rolled up in a roll shape, the generation of transfer marks on the adhesive layer can be sufficiently suppressed.

10, 20, 20 ': Wafer processing tape 11: release film 12, 22: adhesive layer 13: adhesive film 13a: circular label portion 13b: peripheral portion 12a, 24, 24': adhesive layer surface 12b, 25 , 25 ': adhesive layer side edge 15: dicing / die bonding film

Claims (1)

Release film,
An adhesive layer having a predetermined planar shape provided on the surface of the release film;
A label portion covering the adhesive layer and having a predetermined planar shape provided to be in contact with the release film around the adhesive layer, and provided so as to surround the outside of the label portion A wafer processing tape including an adhesive film having a rounded peripheral portion,
The adhesive layer has an adhesive layer surface and an adhesive layer side edge extending from the adhesive layer surface to the release film.
The adhesive layer side edge portion is formed so that an angle between the adhesive layer surface and the adhesive layer side edge portion is an obtuse angle, and is inclined with respect to the release film, and A wafer processing tape characterized in that the angle to the mold film is formed at 80 degrees or more and 84 degrees or less.