TWI519621B - A wafer for processing a wafer, and a method for manufacturing a semiconductor device using a wafer processing wafer - Google Patents
A wafer for processing a wafer, and a method for manufacturing a semiconductor device using a wafer processing wafer Download PDFInfo
- Publication number
- TWI519621B TWI519621B TW099107278A TW99107278A TWI519621B TW I519621 B TWI519621 B TW I519621B TW 099107278 A TW099107278 A TW 099107278A TW 99107278 A TW99107278 A TW 99107278A TW I519621 B TWI519621 B TW I519621B
- Authority
- TW
- Taiwan
- Prior art keywords
- adhesive layer
- film
- wafer
- adhesive
- ring frame
- Prior art date
Links
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Description
本發明是有關晶圓加工用薄膜，特別是有關包含具有切割膠帶(Dicing Tape)及黏晶(die bonding)薄膜的2個機能的切割‧黏晶薄膜之晶圓加工用薄膜。又，有關使用前述晶圓加工用薄膜來製造半導體裝置的方法。The present invention relates to a film for wafer processing, and more particularly to a film for wafer processing comprising a dicing die-cut film comprising two functions of a dicing tape and a die bonding film. Further, a method of manufacturing a semiconductor device using the above-described film for wafer processing.
近來，一併具有切割膠帶的機能及黏晶薄膜(附晶薄膜(Die Attach film))的機能的2個機能之切割‧黏晶薄膜被開發著。該切割膠帶的機能是在將半導體晶圓切斷分離(切割)成各個的半導體晶片時用以固定半導體晶圓者，該黏晶薄膜的機能是用以將所被切斷的半導體晶片接著於引線架或封裝基板等、或在堆疊封裝中是用以層疊、接著半導體晶片彼此間者。Recently, two functions of dicing tape and the function of a die-bonding film (Die Attach film) have been developed. The function of the dicing tape is to fix the semiconductor wafer when the semiconductor wafer is cut (separated) into individual semiconductor wafers, and the function of the viscous film is to follow the cut semiconductor wafer. A lead frame or a package substrate or the like, or in a stacked package, is used for lamination, followed by semiconductor wafers.
作為如此的切割‧黏晶薄膜，是考量往半導體晶圓的貼附或切割時往環框的安裝等的作業性來實施預先切割加工者。Such a dicing film is a pre-cutting machine that takes into consideration the workability of attaching to a semiconductor wafer or attaching it to a ring frame.
圖5及圖6是表示所被預先切割加工的切割.黏晶薄膜的例子。圖5、圖6(A)、圖6(B)是分別為具備切割‧黏晶薄膜35的晶圓加工用薄膜30的概要圖、平面圖、剖面圖。晶圓加工用薄膜30是由脫模薄膜31、接著劑層32及黏著薄膜33所構成。接著劑層32是具有被加工成對應於半導體晶圓的形狀之形狀(例如圓形)的圓形貼紙(label)形狀。黏著薄膜33是被除去對應於切割用的環框形狀的圓形部分的周邊區域者，如圖示般，具有圓形貼紙部33a、及包圍圓形貼紙部33a的外側那樣的周邊部33b。接著劑層32與黏著薄膜33的圓形貼紙部33a是使其中心一致來層疊，且黏著薄膜33的圓形貼紙部33a是覆蓋接著劑層32，且以其周圍來接觸於脫模薄膜31。然後，藉由由接著劑層32及黏著薄膜33的圓形貼紙部33a所形成的層疊構造來構成切割‧黏晶薄膜35。5 and 6 are diagrams showing an example of a cut. 5, 6(A) and 6(B) are a schematic view, a plan view, and a cross-sectional view, respectively, of a wafer processing film 30 including a dicing die-bonding film 35. The wafer processing film 30 is composed of a release film 31, an adhesive layer 32, and an adhesive film 33. The subsequent agent layer 32 is in the shape of a circular label having a shape (for example, a circular shape) processed to correspond to the shape of the semiconductor wafer. The adhesive film 33 is a peripheral region in which a circular portion corresponding to the shape of the ring frame for cutting is removed. As shown, the adhesive film 33 has a circular sticker portion 33a and a peripheral portion 33b surrounding the outer side of the circular sticker portion 33a. The circular layer portion 33a of the adhesive layer 32 and the adhesive film 33 are laminated so that their centers coincide with each other, and the circular sticker portion 33a of the adhesive film 33 covers the adhesive layer 32, and is in contact with the release film 31 around the periphery thereof. . Then, the dicing die-bonding film 35 is formed by a laminated structure formed by the adhesive layer 32 and the circular sticker portion 33a of the adhesive film 33.
在切割半導體晶圓時，從層疊狀態的接著劑層32及黏著薄膜33來剝離脫模薄膜31，如圖7所示，在接著劑層32上貼附半導體晶圓W的背面，在黏著薄膜33的圓形貼紙部33a的外周部黏著固定切割用環框R。在此狀態下切割半導體晶圓W來形成單片化的半導體晶片，然後對黏著薄膜33(33a)實施紫外線照射等的硬化處理來拾取(pickup)半導體晶片。此時，黏著薄膜33(33a)藉由硬化處理而黏著力降低，因此容易從接著劑層32剝離，半導體晶片是在背面附著接著劑層32的狀態下被拾取。附著於半導體晶片的背面之接著劑層32是之後在將半導體晶片接著於引線架或封裝基板、或其他的半導體晶片時，具有作為黏晶薄膜的機能。When the semiconductor wafer is diced, the release film 31 is peeled off from the adhesive layer 32 and the adhesive film 33 in a laminated state, and as shown in FIG. 7, the back surface of the semiconductor wafer W is attached to the adhesive layer 32, and the adhesive film is adhered. A cutting ring frame R is adhered to the outer peripheral portion of the circular sticker portion 33a of 33. In this state, the semiconductor wafer W is diced to form a singulated semiconductor wafer, and then the adhesive film 33 (33a) is subjected to a hardening treatment such as ultraviolet irradiation to pick up the semiconductor wafer. At this time, since the adhesive film 33 (33a) is weakened by the hardening treatment, it is easily peeled off from the adhesive layer 32, and the semiconductor wafer is picked up in a state in which the adhesive layer 32 is adhered to the back surface. The adhesive layer 32 attached to the back surface of the semiconductor wafer is then provided with a function as a die-bonding film when the semiconductor wafer is attached to a lead frame or a package substrate or another semiconductor wafer.
可是，上述那樣的晶圓加工用薄膜30，如圖5及圖6所示般，接著劑層32與黏著薄膜33的圓形貼紙部33a所層疊的部分比其他的部分更厚。並且，圓形貼紙部33a與周邊部33b之間的露出的脫模薄膜31部分是黏著薄膜33被除去的部分，在與黏著薄膜33(33a、33b)部分之間形成黏著薄膜33的厚度量的階差。因此，使用圓筒狀的捲芯來將長的晶圓加工用薄膜30作為製品捲成滾筒狀時，在接著劑層32與黏著薄膜33的圓形貼紙部33a的層疊部分，藉由黏著薄膜33與脫模薄膜31所形成的上述階差會互相重疊，在柔軟的接著劑層32表面產生階差被轉印的現象，亦即如圖8所示的轉印痕(貼紙痕跡、皺紋、或捲印)。如此的轉印痕的發生，特別是在接著劑層32為柔軟的樹脂所形成時或具有厚度時、及晶圓加工用薄膜30的捲數多時等顯著。然後，一旦發生轉印痕，則在接著劑層32上貼附半導體晶圓W的背面時會一邊在接著劑層32與半導體晶圓W之間捲入空氣一邊貼附，因此接著劑層32與半導體晶圓W之間不會密合，其結果，恐有引起接著不良，在半導體晶圓的加工時產生狀態不佳之虞。However, as shown in FIGS. 5 and 6, the wafer processing film 30 as described above has a portion where the adhesive layer 32 and the circular sticker portion 33a of the adhesive film 33 are stacked to be thicker than the other portions. Further, the portion of the exposed release film 31 between the circular sticker portion 33a and the peripheral portion 33b is a portion where the adhesive film 33 is removed, and the thickness of the adhesive film 33 is formed between the portions of the adhesive film 33 (33a, 33b). The step difference. Therefore, when the long wafer processing film 30 is rolled into a roll shape using a cylindrical core, the laminated portion of the adhesive layer 32 and the circular sticker portion 33a of the adhesive film 33 is adhered by the adhesive film. The above-described step differences formed by the release film 31 and the release film 31 overlap each other, and a step of being transferred on the surface of the soft adhesive layer 32, that is, a transfer mark (sticker mark, wrinkle, or Roll)). The occurrence of such a transfer mark is remarkable particularly when the adhesive layer 32 is formed of a soft resin or when it has a thickness, and when the number of rolls of the wafer processing film 30 is large. Then, when a transfer mark is generated, when the back surface of the semiconductor wafer W is attached to the adhesive layer 32, air is entangled between the adhesive layer 32 and the semiconductor wafer W, so that the adhesive layer 32 and The semiconductor wafers W are not in close contact with each other, and as a result, there is a possibility that the semiconductor wafers are defective, and the state of the semiconductor wafer is not good.
為了抑制上述轉印痕的發生，雖可考量減弱晶圓加工用薄膜的捲壓，但此方法恐有產生製品的捆捲偏移，例如往貼帶機(tape mounter)的安裝困難等，晶圓加工用薄膜的實際使用時帶來障礙之虞。In order to suppress the occurrence of the above-mentioned transfer marks, it is possible to reduce the winding of the film for wafer processing. However, this method may cause a misalignment of the product, such as difficulty in mounting the tape mounter, etc. The practical use of the film for processing brings about obstacles.
並且，在專利文獻1揭示有為了抑制上述那樣貼紙痕跡的發生，而在剝離基材上的接著劑層及黏著薄膜的外方設置具有與接著劑層及黏著薄膜的合計膜厚同等或以上的膜厚的支撐層之接著薄片。專利文獻1的接著薄片是藉由具備支撐層來分散施加於接著薄片的捲起壓力或集中於支撐層，抑制轉印痕的發生。Further, Patent Document 1 discloses that in order to suppress the occurrence of the sticker mark as described above, the adhesive layer and the adhesive film on the release substrate are provided in the same manner as the total thickness of the adhesive layer and the adhesive film. A foil of the support layer of film thickness. The succeeding sheet of Patent Document 1 is provided with a support layer to disperse the winding pressure applied to the subsequent sheet or to concentrate on the support layer, thereby suppressing the occurrence of transfer marks.
[專利文獻1]特開2007-2173號公報[Patent Document 1] JP-A-2007-2173
然而，上述專利文獻1的接著薄片是在剝離基材上之製造半導體裝置時等所必要的接著劑層及黏著薄膜以外的部分形成支撐層，所以支撐層的寬度受限，相對於接著劑層及黏著薄膜的外徑，支撐層的寬度窄，會有貼紙痕跡的抑制效果不夠充分的問題發生。又，由於支撐層一般是不具黏著性，未與剝離基材(PET薄膜)充分地貼附，因此在支撐層的最窄部分從剝離基材浮起，使切割‧黏晶薄膜貼合於半導體晶圓時，上述浮起的部分會刮到裝置，發生半導體晶圓損傷的問題。However, the adhesive sheet of the above-mentioned Patent Document 1 is a portion other than the adhesive layer and the adhesive film which are necessary for the production of the semiconductor device on the release substrate, and the support layer is formed, so that the width of the support layer is limited with respect to the adhesive layer. And the outer diameter of the adhesive film, the width of the support layer is narrow, and there is a problem that the suppression effect of the sticker trace is insufficient. Moreover, since the support layer is generally non-adhesive and is not sufficiently adhered to the release substrate (PET film), it floats from the release substrate at the narrowest portion of the support layer, and the cut/peel film is bonded to the semiconductor. In the case of a wafer, the above-mentioned floating portion is scraped to the device, causing a problem of damage to the semiconductor wafer.
另外，雖也可考量擴大支撐層的寬度，但晶圓加工用薄膜全體的寬度也會變廣，所以難以使用原有的設備。又，由於支撐層最終是被廢棄的部分，因此擴大支撐層的寬度會帶來材料成本的上昇。In addition, although the width of the support layer can be increased, the width of the entire wafer processing film is also widened, so that it is difficult to use the original equipment. Moreover, since the support layer is eventually discarded, the enlargement of the width of the support layer leads to an increase in material cost.
於是，本發明的目的是在於提供一種在將具有接著劑層及黏著薄膜的晶圓加工用薄膜捲成滾筒狀時，可充分抑制轉印痕發生於接著劑層的晶圓加工用薄膜。並且，提供一種使用如此的晶圓加工用薄膜來製造半導體裝置的方法。Then, an object of the present invention is to provide a film for wafer processing which can sufficiently suppress occurrence of transfer marks on the adhesive layer when the film for wafer processing having the adhesive layer and the adhesive film is wound into a roll shape. Further, a method of manufacturing a semiconductor device using such a film for wafer processing is provided.
為了達成以上那樣的目的，本發明之第1態樣的晶圓加工用薄膜的特徵係具有：黏著薄膜，其係由長的基材薄膜、及長薄膜狀地設於前述基材薄膜上的黏著劑層所構成；及接著劑層，其係長薄膜狀地設於前述黏著劑層上，前述黏著劑層係包含放射線聚合性化合物及光引發劑。In order to achieve the above object, a wafer for processing a wafer according to a first aspect of the present invention has an adhesive film comprising a long base film and a long film formed on the base film. The adhesive layer is formed on the adhesive layer in a long film form, and the adhesive layer contains a radiation polymerizable compound and a photoinitiator.
若根據上述發明的晶圓加工用薄膜，則因為黏著劑層含放射線聚合性化合物及光引發劑，所以藉由將光引發劑會反應之波長的光照射於黏著劑層的所望位置，可形成以所望的位置、大小及形狀來硬化之黏著劑層的部分及未硬化之黏著劑層的部分。因此，藉由使對應於環框的位置之黏著劑層曝光，可使黏著劑層對應於環框的部分硬化，使黏著性降低，而來剝離對應於該部分的位置之接著劑層。According to the film for wafer processing of the above invention, since the adhesive layer contains the radiation polymerizable compound and the photoinitiator, the light having a wavelength at which the photoinitiator reacts is irradiated onto the desired position of the adhesive layer, whereby the film can be formed. The portion of the adhesive layer that is hardened in the desired position, size, and shape, and the portion of the uncured adhesive layer. Therefore, by exposing the adhesive layer corresponding to the position of the ring frame, the adhesive layer can be hardened corresponding to the portion of the ring frame to lower the adhesiveness, and the adhesive layer corresponding to the position of the portion can be peeled off.
以往，因為接著劑層難以和被著體剝離，所以使用預先切割成所望的形狀(例如圓形平面形狀)之接著劑層，藉此防止在剝離使用後的晶圓加工用薄膜時接著劑殘留於環框，但只要如上述般使對應於環框的位置的黏著性喪失來剝離接著劑層即可，因此不必將接著劑層及黏著薄膜預先切割成所定的形狀。其結果，在將晶圓加工用薄膜當作製品來捲成滾筒狀時，可防止在接著劑層發生轉印痕的情形。Conventionally, since it is difficult for the adhesive layer to be peeled off from the object, an adhesive layer previously cut into a desired shape (for example, a circular planar shape) is used, thereby preventing the adhesive residue from being used for the wafer processing film after peeling. In the ring frame, the adhesive layer may be removed by removing the adhesive layer at the position corresponding to the ring frame as described above. Therefore, it is not necessary to previously cut the adhesive layer and the adhesive film into a predetermined shape. As a result, when the film for wafer processing is rolled into a roll shape as a product, it is possible to prevent transfer marks from occurring in the adhesive layer.
又，本發明之第2態樣的晶圓加工用薄膜的特徵係具有：黏著薄膜，其係由長的基材薄膜、及長薄膜狀地設於前述基材薄膜上的黏著劑層所構成；及接著劑層，其係長薄膜狀地設於前述黏著劑層上，前述黏著劑層係含熱聚合性化合物。Further, a film for processing a wafer according to a second aspect of the present invention has an adhesive film comprising a long base film and an adhesive layer provided on the base film in a long film shape. And an adhesive layer which is provided on the adhesive layer in a long film form, and the adhesive layer contains a thermally polymerizable compound.
若根據上述發明，則藉由對黏著劑層的所望位置照射熱，可形成以所望的位置、大小及形狀來硬化之黏著劑層的部分及未硬化之黏著劑層的部分。因此，藉由對對應於環框的位置的黏著劑層照射熱，可使黏著劑層對應於環框的部分硬化，使黏著性降低，而來剝離對應於該部分的位置的接著劑層。因此，不必將接著劑層及黏著薄膜預先切割成所定的形狀。其結果，在將晶圓加工用薄膜當作製品來捲成滾筒狀時，可防止在接著劑層發生轉印痕。According to the above invention, by irradiating heat to the desired position of the adhesive layer, a portion of the adhesive layer which is cured at a desired position, size, and shape, and a portion of the uncured adhesive layer can be formed. Therefore, by irradiating heat to the adhesive layer corresponding to the position of the ring frame, the adhesive layer can be hardened corresponding to the portion of the ring frame, and the adhesiveness can be lowered to peel off the adhesive layer corresponding to the position of the portion. Therefore, it is not necessary to previously cut the adhesive layer and the adhesive film into a predetermined shape. As a result, when the film for wafer processing is rolled into a roll shape as a product, transfer marks can be prevented from occurring in the adhesive layer.
又，本發明之第3態樣的晶圓加工用薄膜，係於上述本發明之第1或2態樣的晶圓加工用薄膜中，前述黏著薄膜係未被預先切割成對應於環框的形狀，前述接著劑層係未被預先切割成對應於半導體晶圓的形狀。Further, in the wafer processing film according to the first or second aspect of the present invention, the film for processing a wafer according to the third aspect of the present invention is not previously cut into a ring frame. In the shape, the aforementioned adhesive layer is not previously cut into a shape corresponding to the semiconductor wafer.
若根據上述發明，則因為接著薄膜及黏著劑層未被預先切割，所以在將晶圓加工用薄膜當作製品來捲成滾筒狀時，在接著劑層與黏著薄膜的層疊部分產生的階差也不存在，因此可防止在接著劑層發生轉印痕。According to the above invention, since the film and the adhesive layer are not previously cut, when the film for wafer processing is rolled into a roll shape as a product, a step difference occurs in the laminated portion between the adhesive layer and the adhesive film. It does not exist, so that transfer marks can be prevented from occurring in the adhesive layer.
又，本發明之第4態樣的晶圓加工用薄膜，係於上述本發明的第1~3的其中任一態樣的晶圓加工用薄膜中，前述接著劑層係在對應於比半導體晶圓的外周還要外側，比前述環框的外周還要內側的位置設有切口。Further, in the film for processing a wafer according to any one of the first to third aspects of the present invention, in the film processing film according to the fourth aspect of the present invention, the adhesive layer is corresponding to the semiconductor. The outer periphery of the wafer is also outside, and a slit is provided at a position further inside than the outer circumference of the ring frame.
若根據上述發明的晶圓加工用薄膜，則藉由使對應於環框的位置的黏著劑層部分硬化，可使黏著力降低，從該部分以切口作為基點來使接著劑層剝離。According to the film for wafer processing of the above invention, the adhesive layer is partially cured by curing the position of the adhesive layer corresponding to the position of the ring frame, and the adhesive layer is peeled off from the portion with the slit as a base point.
又，本發明之第5態樣的晶圓加工用薄膜，係於上述本發明的第1、第3或第4的其中任一態樣的晶圓加工用薄膜中，在前述接著劑層的表面，可剝離地貼合有保護薄膜，前述保護薄膜係具有放射線遮蔽性的同時，在對應於比半導體晶圓的外周還要外側，比前述環框的外周還要內側的位置形成有切口。Further, the film for wafer processing according to the fifth aspect of the present invention is the film for processing a wafer according to any one of the first, third or fourth aspects of the present invention, in the adhesive layer. The surface of the protective film is detachably bonded to the protective film, and the protective film has a radiation shielding property, and a slit is formed at a position outside the outer circumference of the ring frame in the outer side than the outer circumference of the semiconductor wafer.
若根據上述發明的晶圓加工用薄膜，則藉由剝離比保護薄膜的切口還要外側的部分，以剩下的部分作為遮罩來曝光對應於環框的位置的黏著劑層，可使黏著劑層對應於環框的部分硬化，使黏著性降低，而來剝離對應於該部分的位置的接著劑層。According to the film for wafer processing of the above invention, the adhesive layer which is located outside the slit of the protective film is peeled off, and the adhesive layer corresponding to the position of the ring frame is exposed with the remaining portion as a mask, so that the adhesive can be adhered. The layer of the agent corresponds to partial hardening of the ring frame to lower the adhesion to peel off the adhesive layer corresponding to the position of the portion.
又，本發明之第1態樣的製造半導體裝置的方法，係使用上述本發明之第1~5的其中任一態樣的晶圓加工用薄膜來製造半導體裝置的方法，其特徵係包含：使前述黏著劑層對應於晶圓的部分以外，至少對應於環框的部分硬化，從所硬化的黏著劑層的部分剝離前述接著劑層之工程；在前述接著劑層貼合前述晶圓之工程；在前述黏著劑層固定前述環框之工程；切割前述晶圓，形成被單片化的晶片及接著劑層之工程；使前述黏著劑層對應於晶圓的部分硬化，拾取前述被單片化的晶片及接著劑層之工程。Further, a method of manufacturing a semiconductor device according to a first aspect of the present invention is a method of manufacturing a semiconductor device using the film for wafer processing according to any one of the first to fifth aspects of the present invention, characterized in that: Having the adhesive layer correspond to a portion of the wafer, at least corresponding to the hardening of the portion of the ring frame, and the process of peeling off the adhesive layer from the portion of the cured adhesive layer; bonding the wafer to the adhesive layer Engineering; fixing the aforementioned ring frame in the adhesive layer; cutting the wafer to form a singulated wafer and an adhesive layer; and causing the adhesive layer to partially harden the wafer to pick up the sheet The engineering of the sliced wafer and the adhesive layer.
若根據上述發明之製造半導體裝置的方法，則可使黏著劑層對應於半導體晶圓(或稱晶圓)的部分以外，至少對應於環框的部分、及黏著劑層對應於晶圓的部分階段性地硬化，使黏著劑層的黏著力降低，在接著劑層與黏著劑層之間改變可剝離的位置。因此，可不用大規模變更原有的設備來變更設計所望的半導體裝置。According to the method of manufacturing a semiconductor device according to the above aspect of the invention, the adhesive layer may correspond to at least a portion of the semiconductor wafer (or wafer), at least a portion corresponding to the ring frame, and a portion of the adhesive layer corresponding to the wafer. The stepwise hardening reduces the adhesion of the adhesive layer and changes the peelable position between the adhesive layer and the adhesive layer. Therefore, it is possible to change the semiconductor device desired by design without changing the original device on a large scale.
另外，上述發明之製造半導體裝置的方法是有關製造半導體裝置之前的晶圓加工用薄膜，因為接著劑層與黏著劑層不必預先切割，所以在當作製品捲成滾筒狀時，在接著劑層與黏著薄膜的層疊部分產生的階差也不存在，因此可防止在接著劑層發生轉印痕。Further, the method of manufacturing a semiconductor device according to the above invention is a film for wafer processing before the semiconductor device is manufactured, since the adhesive layer and the adhesive layer do not have to be previously cut, so when the product is rolled into a roll shape, the adhesive layer is formed. There is also no step difference with the laminated portion of the adhesive film, so that transfer marks can be prevented from occurring in the adhesive layer.
若根據本發明的第1態樣的晶圓加工用薄膜，則因為黏著劑層含放射線聚合性化合物及光引發劑，所以藉由將光引發劑會反應之波長的光照射於黏著劑層的所望位置，可形成以所望的位置、大小及形狀來硬化之黏著劑層的部分及未硬化之黏著劑層的部分。因此，藉由使對應於環框的位置之黏著劑層曝光，可使黏著劑層對應於環框的部分硬化，使黏著性降低，而來剝離對應於該部分的位置之接著劑層。According to the film for processing a wafer according to the first aspect of the present invention, since the adhesive layer contains a radiation polymerizable compound and a photoinitiator, light having a wavelength at which the photoinitiator reacts is irradiated onto the adhesive layer. The desired position forms a portion of the adhesive layer that is cured in a desired position, size, and shape, and a portion of the uncured adhesive layer. Therefore, by exposing the adhesive layer corresponding to the position of the ring frame, the adhesive layer can be hardened corresponding to the portion of the ring frame to lower the adhesiveness, and the adhesive layer corresponding to the position of the portion can be peeled off.
因此，不必將接著劑層及黏著薄膜預先切割成所定的形狀。其結果，在將晶圓加工用薄膜當作製品來捲成滾筒狀時，可防止在接著劑層發生轉印痕。所以，可防止因空氣被捲入接著劑層與半導體晶圓之間而造成接著劑層與半導體晶圓之間的密合性降低的同時，可在將半導體晶片接著於引線架或封裝基板、或其他半導體晶片時，防止接著不良、或晶圓的加工時的狀態不佳。Therefore, it is not necessary to previously cut the adhesive layer and the adhesive film into a predetermined shape. As a result, when the film for wafer processing is rolled into a roll shape as a product, transfer marks can be prevented from occurring in the adhesive layer. Therefore, it is possible to prevent the adhesion between the adhesive layer and the semiconductor wafer from being lowered due to the entrapment of air between the adhesive layer and the semiconductor wafer, and the semiconductor wafer can be attached to the lead frame or the package substrate, In the case of other semiconductor wafers, it is prevented from being defective or the state at the time of processing of the wafer is not good.
若根據本發明的第2態樣的晶圓加工用薄膜，則藉由對黏著劑層的所望位置照射熱，可形成以所望的位置、大小及形狀來硬化之黏著劑層的部分及未硬化之黏著劑層的部分。因此，藉由對對應於環框的位置的黏著劑層照射熱，可使黏著劑層對應於環框的部分硬化，使黏著性降低，而來剝離對應於該部分的位置的接著劑層。因此，不必將接著劑層及黏著薄膜預先切割成所定的形狀。其結果，在將晶圓加工用薄膜當作製品來捲成滾筒狀時，可防止在接著劑層發生轉印痕。According to the film for processing a wafer according to the second aspect of the present invention, by applying heat to a desired position of the adhesive layer, a portion of the adhesive layer which is hardened at a desired position, size, and shape and an uncured portion can be formed. The part of the adhesive layer. Therefore, by irradiating heat to the adhesive layer corresponding to the position of the ring frame, the adhesive layer can be hardened corresponding to the portion of the ring frame, and the adhesiveness can be lowered to peel off the adhesive layer corresponding to the position of the portion. Therefore, it is not necessary to previously cut the adhesive layer and the adhesive film into a predetermined shape. As a result, when the film for wafer processing is rolled into a roll shape as a product, transfer marks can be prevented from occurring in the adhesive layer.
所以，可防止因空氣被捲入接著劑層與半導體晶圓之間而造成接著劑層與半導體晶圓之間的密合性降低的同時，可在將半導體晶片接著於引線架或封裝基板、或其他半導體晶片時，防止接著不良、或晶圓的加工時的狀態不佳。Therefore, it is possible to prevent the adhesion between the adhesive layer and the semiconductor wafer from being lowered due to the entrapment of air between the adhesive layer and the semiconductor wafer, and the semiconductor wafer can be attached to the lead frame or the package substrate, In the case of other semiconductor wafers, it is prevented from being defective or the state at the time of processing of the wafer is not good.
若根據本發明的第3態樣的晶圓加工用薄膜，則因為接著薄膜及黏著劑層未被預先切割，所以在將晶圓加工用薄膜當作製品來捲成滾筒狀時，在接著劑層與黏著薄膜的層疊部分產生的階差也不存在，因此可防止在接著劑層發生轉印痕。According to the film for processing a wafer according to the third aspect of the present invention, since the film and the adhesive layer are not previously cut, when the film for wafer processing is rolled into a roll as a product, the adhesive is used. The step difference between the layer and the laminated portion of the adhesive film does not exist, so that transfer marks can be prevented from occurring in the adhesive layer.
所以，可防止因空氣被捲入接著劑層與半導體晶圓之間而造成接著劑層與半導體晶圓之間的密合性降低的同時，可在將半導體晶片接著於引線架或封裝基板、或其他半導體晶片時，防止接著不良、或晶圓的加工時的狀態不佳。Therefore, it is possible to prevent the adhesion between the adhesive layer and the semiconductor wafer from being lowered due to the entrapment of air between the adhesive layer and the semiconductor wafer, and the semiconductor wafer can be attached to the lead frame or the package substrate, In the case of other semiconductor wafers, it is prevented from being defective or the state at the time of processing of the wafer is not good.
若根據本發明的第4態樣的晶圓加工用薄膜，則藉由使對應於環框的位置的黏著劑層部分硬化，可使黏著力降低，從該部分以切口作為基點來使接著劑層剝離。According to the film for wafer processing of the fourth aspect of the present invention, the adhesive layer can be partially cured by curing the position of the adhesive layer corresponding to the position of the ring frame, and the adhesive can be used as a base point by using the slit as a base point. Layer peeling.
若根據本發明的第5態樣的晶圓加工用薄膜，則藉由剝離比保護薄膜的切口還要外側的部分，以剩下的部分作為遮罩來曝光對應於環框的位置的黏著劑層，可使黏著劑層對應於環框的部分硬化，使黏著性降低，而來剝離對應於該部分的位置的接著劑層。According to the film processing film of the fifth aspect of the present invention, the adhesive portion corresponding to the position of the ring frame is exposed by peeling off a portion outside the slit of the protective film and using the remaining portion as a mask. The layer allows the adhesive layer to be hardened corresponding to the portion of the ring frame to lower the adhesion, thereby peeling off the adhesive layer corresponding to the position of the portion.
若根據本發明的第1態樣之製造半導體裝置的方法，則可使黏著劑層對應於半導體晶圓的部分以外，至少對應於環框的部分、及黏著劑層對應於晶圓的部分階段性地硬化，使黏著劑層的黏著力降低，在接著劑層與黏著劑層之間改變可剝離的位置。因此，可不用大規模變更原有的設備來變更設計所望的半導體裝置。According to the first aspect of the present invention, in the method of fabricating a semiconductor device, the adhesive layer can correspond to a portion of the semiconductor wafer, at least a portion corresponding to the ring frame, and a portion of the adhesive layer corresponding to the wafer. Sexually hardens to reduce the adhesion of the adhesive layer and change the peelable position between the adhesive layer and the adhesive layer. Therefore, it is possible to change the semiconductor device desired by design without changing the original device on a large scale.
另外，有關製造半導體裝置之前的晶圓加工用薄膜，因為接著劑層與黏著劑層不必預先切割，所以在當作製品捲成滾筒狀時，在接著劑層與黏著薄膜的層疊部分產生的階差也不存在，因此可防止在接著劑層發生轉印痕。Further, regarding the film for wafer processing before the manufacture of the semiconductor device, since the adhesive layer and the adhesive layer do not have to be previously cut, the step generated in the laminated portion of the adhesive layer and the adhesive film when the product is rolled into a roll shape is used. The difference does not exist, so that transfer marks can be prevented from occurring in the adhesive layer.
以下根據圖面來詳細說明本發明的實施形態。圖1是本實施形態的晶圓加工用薄膜的剖面圖。圖2是本實施形態的變形例的晶圓加工用薄膜的剖面圖。圖3及圖4是說明使用本實施形態的晶圓加工用薄膜來製造半導體裝置的方法的圖。Hereinafter, embodiments of the present invention will be described in detail based on the drawings. Fig. 1 is a cross-sectional view showing a film for wafer processing of the embodiment. Fig. 2 is a cross-sectional view showing a film for wafer processing according to a modification of the embodiment. 3 and 4 are views for explaining a method of manufacturing a semiconductor device using the film for wafer processing of the embodiment.
以下，詳細說明有關本發明的第1實施形態的晶圓加工用薄膜的各構成要素。如圖1所示，本發明的第1實施形態的晶圓加工用薄膜10是具有黏著薄膜14及接著劑層13的切割‧黏晶薄膜15，該黏著薄膜14是由基材薄膜11及設於基材薄膜11上的黏著劑層12所構成，該接著劑層13是設於黏著劑層12上。接著劑層13是不被預先切割成對應於半導體晶圓(或稱晶圓)的形狀，黏著薄膜14是不被預先切割成對應於環框的形狀。在本實施形態中，黏著薄膜14及接著劑層13是在長的基材薄膜11上層疊成長的薄膜狀，晶圓加工用薄膜10是不具有厚度相異的部分。Hereinafter, each component of the film for wafer processing according to the first embodiment of the present invention will be described in detail. As shown in Fig. 1, a wafer processing film 10 according to a first embodiment of the present invention is a dicing film 1 having an adhesive film 14 and an adhesive layer 13, and the adhesive film 14 is made of a substrate film 11 and The adhesive layer 12 is formed on the base film 11, and the adhesive layer 13 is provided on the adhesive layer 12. The adhesive layer 13 is not previously cut into a shape corresponding to a semiconductor wafer (or wafer), and the adhesive film 14 is not previously cut into a shape corresponding to the ring frame. In the present embodiment, the adhesive film 14 and the adhesive layer 13 are formed into a film formed by laminating on the long base film 11, and the film for film processing 10 does not have a thickness difference.
切割‧黏晶薄膜15作為製品流通時，未圖示的保護薄膜之脫模薄膜會被貼附於接著劑層13側的切割‧黏晶薄膜全面，作為晶圓加工用薄膜10來流通於市場。以下，說明有關晶圓加工用薄膜10的構成要素之脫模薄膜、接著劑層13、及由基材薄膜11和黏著劑層12所構成的黏著薄膜14。When the dicing film 1 is circulated as a product, a release film of a protective film (not shown) is attached to the dicing film of the adhesive layer 13 side, and is distributed as a film for wafer processing 10 in the market. . Hereinafter, the release film of the components of the wafer processing film 10, the adhesive layer 13, and the adhesive film 14 composed of the base film 11 and the adhesive layer 12 will be described.
使用於晶圓加工用薄膜10的脫模薄膜，可使用聚對苯二甲二乙酯(PET)系、聚乙烯系、其他被施以脫模處理的薄膜等周知者。脫模薄膜的厚度並無特別加以限定，可適當地設定，但較理想是25~50μm。As the release film used for the film for wafer processing 10, a known person such as polyethylene terephthalate (PET), polyethylene, or another film subjected to release treatment can be used. The thickness of the release film is not particularly limited and may be appropriately set, but is preferably 25 to 50 μm.
接著劑層13是在半導體晶圓等被貼合而切割後，拾取被單片化的半導體晶片(或稱晶片)時，從黏著薄膜14剝離而附著於晶片，作為將晶片固定於基板或引線架時的接著劑使用者。因此，接著劑層13是在拾取晶片時，原封不動附著於被單片化的晶片之狀態下，具有可從黏著薄膜14剝離的剝離性，且在黏晶時，為了將晶片接著固定於基板或引線架，而具有充分的接著可靠度。When the semiconductor wafer or the like is bonded and cut, and the semiconductor wafer (or wafer) is picked up, the adhesive layer 13 is peeled off from the adhesive film 14 and adhered to the wafer to fix the wafer on the substrate or the lead. The user of the adhesive at the time of the shelf. Therefore, when the wafer is picked up, the adhesive layer 13 has peelability which can be peeled off from the adhesive film 14 in a state of being adhered to the wafer which is singulated, and in order to fix the wafer to the substrate at the time of die bonding. Or lead frame with sufficient follow-up reliability.
接著劑層13是預先使接著劑薄膜化者，例如可使用被使用在接著劑之公知的聚醯亞胺樹脂、聚醯胺樹脂、聚醚醯亞胺樹脂、聚醯胺醯亞胺樹脂、聚酯樹脂、聚酯樹脂、聚酯醯亞胺樹脂、苯氧基樹脂、聚碸樹脂、聚醚碸樹脂、聚次苯基硫化物樹脂、聚醚酮樹脂、氯化聚丙烯樹脂、丙烯樹脂、聚氨基甲酸酯樹脂、環氧樹脂、聚丙烯醯胺樹脂、三聚氰胺樹脂等或其混合物。又，為了強化對晶片或引線架的接著力，最好以矽烷耦合劑或鈦耦合劑作為添加劑來加在前述材料或其混合物中。The adhesive layer 13 is formed by previously thinning an adhesive. For example, a polyimide resin, a polyamide resin, a polyether amide resin, a polyamide amide resin, which is known to be used as an adhesive, can be used. Polyester resin, polyester resin, polyester phthalimide resin, phenoxy resin, polyfluorene resin, polyether oxime resin, polyphenylene sulfide resin, polyether ketone resin, chlorinated polypropylene resin, acrylic resin , a polyurethane resin, an epoxy resin, a polypropylene decylamine resin, a melamine resin, or the like, or a mixture thereof. Further, in order to enhance the adhesion to the wafer or the lead frame, it is preferable to add the decane coupling agent or the titanium coupling agent as an additive to the above materials or a mixture thereof.
接著劑層13的厚度並無特別加以制限，但通常以5~100μm程度為佳。又，本實施形態的晶圓加工用薄膜10的接著劑層13是層疊於黏著薄膜14的黏著劑層12全面，未被進行使對應於半導體晶圓的形狀等之預先切割，至少在比對應於半導體晶圓的位置更外側，比對應於環框的位置更內側，設有切口13a。切口13a亦可設在環框被貼著時環框的內周及外周所位置的部分，但本實施形態是在接著劑層13對應於半導體晶圓的外周之位置設置切口13a。The thickness of the subsequent agent layer 13 is not particularly limited, but is usually about 5 to 100 μm. In addition, the adhesive layer 13 of the wafer processing film 10 of the present embodiment is entirely laminated on the adhesive layer 12 of the adhesive film 14, and is not subjected to pre-cutting in accordance with the shape or the like of the semiconductor wafer, at least in comparison. The slit 13a is provided on the outer side of the semiconductor wafer at a position further on the inner side than the position corresponding to the ring frame. The slit 13a may be provided at a position where the inner circumference and the outer circumference of the ring frame are placed when the ring frame is attached. However, in the present embodiment, the slit 13a is provided at a position where the adhesive layer 13 corresponds to the outer circumference of the semiconductor wafer.
因此，藉由使形成於比接著劑層13的切口13a還要外側的部分的接著劑層部分之下的黏著劑層部分硬化，可使硬化的黏著劑層部分的黏著力降低，而於黏著劑層12固定環框之前，以切口13a作為基點來使接著劑層13從黏著劑層12硬化的部分剝離。另外，亦可取代在對應於半導體晶圓的外周的位置所設置的上述切口13a，在對應於環框的內周及外周的位置設置切口，使對應於環框的位置的黏著劑層部分硬化，令接著劑層13對應於環框的部分從黏著劑層12剝離。Therefore, by partially hardening the adhesive layer formed under the adhesive layer portion of the portion outside the slit 13a of the adhesive layer 13, the adhesion of the hardened adhesive layer portion can be lowered, and the adhesive layer can be adhered. Before the agent layer 12 is fixed to the ring frame, the portion of the adhesive layer 13 which is hardened from the adhesive layer 12 is peeled off by using the slit 13a as a base point. Further, instead of the slit 13a provided at a position corresponding to the outer circumference of the semiconductor wafer, a slit may be provided at a position corresponding to the inner circumference and the outer circumference of the ring frame to partially harden the adhesive layer corresponding to the position of the ring frame. The portion of the adhesive layer 13 corresponding to the ring frame is peeled off from the adhesive layer 12.
其結果，可形成一種在半導體晶圓貼合的部分有接著劑層13，在切割用的環框貼合的部分無接著劑層13，只存在黏著薄膜14之晶圓加工用薄膜。As a result, the adhesive layer 13 can be formed in the portion where the semiconductor wafer is bonded, the adhesive layer 13 is not bonded to the portion for the dicing ring, and the wafer for processing the adhesive film 14 can be formed.
本實施形態的黏著薄膜14是在基材薄膜11設置黏著劑層12者。而且，黏著薄膜14是在切割晶圓時具有充分的黏著力，使晶圓不會剝離，且在切割後拾取晶片時具有低的黏著力，使可容易從接著劑層13剝離。因此，在黏著薄膜14的黏著劑層12含有放射線聚合性化合物及光引發劑。The adhesive film 14 of the present embodiment is one in which the adhesive layer 12 is provided on the base film 11. Further, the adhesive film 14 has a sufficient adhesive force when the wafer is diced, so that the wafer does not peel off, and has a low adhesive force when the wafer is picked up after dicing, so that it can be easily peeled off from the adhesive layer 13. Therefore, the adhesive layer 12 of the adhesive film 14 contains a radiation polymerizable compound and a photoinitiator.
黏著薄膜14的基材薄膜11並無特別加以限制，可使用以往周知者，但因為本實施形態的黏著薄膜14的黏著劑層12是含放射線硬化性的放射線聚合性化合物，所以使用具有放射線透過性者為理想。The base film 11 of the adhesive film 14 is not particularly limited, and a conventionally known one can be used. However, since the adhesive layer 12 of the adhesive film 14 of the present embodiment is a radiation-curable radiation-polymerizable compound, it is used for radiation transmission. Sex is ideal.
例如，該材料可舉聚乙烯、聚丙烯、乙烯-丙烯共聚物、聚丁烯-1、聚-4-甲基戊烯-1、乙烯-醋酸乙烯共聚物、乙烯-丙烯酸乙酯共聚物、乙烯-丙烯酸甲酯共聚物、乙烯-丙烯酸共聚物、離子交聯聚合物等的α-烯烴的單獨聚合物或共聚物或該等的混合物、聚氨基甲酸酯、苯乙烯-乙烯-丁烯或戊烯系共聚物、聚醯胺-多元醇共聚物等的熱可塑性彈性體、及該等的混合物。又，基材薄膜11亦可為從該等的群所選的2種以上的材料混合者，該等可為單層或複層化者。基材薄膜11的厚度並無特別加以限定，可酌量設定，但以50~200μm為理想。For example, the material may be polyethylene, polypropylene, ethylene-propylene copolymer, polybutene-1, poly-4-methylpentene-1, ethylene-vinyl acetate copolymer, ethylene-ethyl acrylate copolymer, Individual polymers or copolymers of α-olefins such as ethylene-methyl acrylate copolymer, ethylene-acrylic acid copolymer, ionomer, or the like, or mixtures thereof, polyurethane, styrene-ethylene-butene Or a thermoplastic elastomer such as a pentene copolymer or a polyamine-polyol copolymer, or a mixture thereof. Further, the base film 11 may be a mixture of two or more materials selected from the group, and these may be a single layer or a stratified layer. The thickness of the base film 11 is not particularly limited and may be set as appropriate, but it is preferably 50 to 200 μm.
使用於黏著薄膜14的黏著劑層12之樹脂並非無特別加以限定，可使用被使用在黏著劑之周知的氯化聚丙烯樹脂、丙烯樹脂、聚酯樹脂、聚氨基甲酸酯樹脂、環氧樹脂等。The resin used for the adhesive layer 12 of the adhesive film 14 is not particularly limited, and a known chlorinated polypropylene resin, acrylic resin, polyester resin, polyurethane resin, epoxy used in the adhesive can be used. Resin, etc.
在黏著劑層12的樹脂中適當混合丙烯系黏著劑、放射線聚合性化合物、光聚合引發劑、硬化劑等來調製黏著劑為理想，在本實施形態的黏著劑層12的樹脂是含放射線聚合性化合物。因此，將放射線聚合性化合物混合於黏著劑層12，可容易藉由放射線硬化來從接著劑層13剝離。黏著劑層12的厚度並無特別加以限定，可酌量設定，但以5~30μm為理想。It is preferable to mix a propylene-based adhesive, a radiation-polymerizable compound, a photopolymerization initiator, a curing agent, etc. in the resin of the adhesive layer 12 to prepare an adhesive, and the resin of the adhesive layer 12 of this embodiment is a radiation-containing polymerization. Sex compounds. Therefore, the radiation polymerizable compound is mixed with the adhesive layer 12, and can be easily peeled off from the adhesive layer 13 by radiation hardening. The thickness of the adhesive layer 12 is not particularly limited and may be set as appropriate, but it is preferably 5 to 30 μm.
放射線聚合性化合物，例如可適用三羥甲基丙烷三丙烯酸酯、季戊四醇三丙烯酸酯、季戊四醇四丙烯酸酯、二季戊四醇單羥基五丙烯酸酯，二季戊四醇六丙烯酸酯，1,4-丁烯乙二醇二丙烯酸酯，1,6己二醇二丙烯酸酯，聚乙烯乙二醇二丙烯酸酯或寡酯丙烯酸酯等。A radiation-polymerizable compound, for example, trimethylolpropane triacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, 1,4-butene glycol Diacrylate, 1,6 hexanediol diacrylate, polyethylene glycol diacrylate or oligoester acrylate, and the like.
又，除了上述那樣的丙烯酸酯系化合物以外，也可使用胺(基)甲酸乙酯丙烯酸酯系寡聚物。胺(基)甲酸乙酯丙烯酸酯系寡聚物是可在使聚酯型或聚醚型等的多元醇化合物與多價異氰酸鹽化合物(例如、2,4-甲苯二異氰酸酯、2,6-甲苯二異氰酸酯、1,3-二甲苯二異氰酸酯、1,4-二甲苯二異氰酸酯、二苯(基)甲烷4,4-二異氰酸酯等)反應而取得的末端異氰酸酯胺基甲酸乙酯預聚物中，使具有羥基的丙烯酸酯或甲基丙烯酸酯(例如、2-羥基乙基丙烯酸酯、2-羥基乙基甲基丙烯酸酯、2-羥基丙基丙烯酸酯、2-羥基丙基甲基丙烯酸酯、聚乙烯基乙二醇丙烯酸酯、聚乙烯基乙二醇甲基丙烯酸酯等)反應來取得。另外，亦可在黏著劑層12中混合由上述樹脂所選擇的2種以上者。Further, in addition to the above acrylate-based compound, an amine (meth)carboxylate acrylate-based oligomer can also be used. The amine (meth)carboxylate acrylate oligomer is a polyol compound such as a polyester or a polyether, and a polyvalent isocyanate compound (for example, 2,4-toluene diisocyanate, 2, Terminal isocyanate urethane precipitate obtained by reaction of 6-toluene diisocyanate, 1,3-xylene diisocyanate, 1,4-dimethylbenzene diisocyanate, diphenyl(meth)methane 4,4-diisocyanate, etc. In the polymer, an acrylate or methacrylate having a hydroxyl group (for example, 2-hydroxyethyl acrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl acrylate, 2-hydroxypropyl A) Acrylate, polyvinyl glycol acrylate, polyvinyl glycol methacrylate, etc.) are obtained by reaction. Further, two or more types selected from the above resins may be mixed in the adhesive layer 12.
並且，在本實施形態的黏著劑層12的樹脂中含光引發劑。光引發劑，例如可舉4-(2-羥基乙氧基)苯基(2-羥基-2-丙基)酮、α-羥基-α,α’-二甲基苯乙酮、2-甲基-2-羥基苯丙酮、1-羥基環已基苯酮等的α-酮醇系化合物；甲氰基苯乙酮、2,2-二甲氧基-2-苯基苯乙酮、2,2-二乙氧基苯乙酮、2-甲基-1-[4-(甲硫基)-苯基]-2-嗎啉代丙烷-1等的苯乙酮系化合物；苯偶姻乙醚、苯偶姻異丙基醚、茴香偶姻甲醚等的苯偶姻醚系化合物；苄基二甲基縮酮等的縮酮系化合物；2-萘基磺醯氯化物等的芳香族磺醯氯化物系化合物；1-苯酮基-1,1一丙二酮-2-(o-乙氧基羰基)肟等的光活性肟系化合物；二苯基酮、苯醯基安息香酸、3,3’-二甲基-4-甲氧基二苯基酮等的二苯基酮系化合物；噻吨酮、2-氯基噻吨酮、2-甲基噻吨酮、2,4-二甲基噻吨酮、異丙基噻吨酮、2,4-二氯基噻吨酮、2,4-二乙基噻吨酮、2,4-二異丙基噻吨酮等的噻吨酮系化合物；樟腦醌；鹵化酮；醯基氯化碄；醯基磷酸鹽等。該等光聚合引發劑的混合量，較理想是相對於丙烯酸系共聚物100質量份，為0.01~5質量份。Further, the resin of the adhesive layer 12 of the present embodiment contains a photoinitiator. The photoinitiator is, for example, 4-(2-hydroxyethoxy)phenyl(2-hydroxy-2-propyl)one, α-hydroxy-α,α'-dimethylacetophenone, 2-methyl An α-keto alcohol compound such as benzyl-2-hydroxypropiophenone or 1-hydroxycyclohexyl ketone; cyanoacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2 Acetophenone-based compound such as 2-diethoxyacetophenone or 2-methyl-1-[4-(methylthio)-phenyl]-2-morpholinopropane-1; benzoin a benzoin ether compound such as diethyl ether, benzoin isopropyl ether or fennel methyl ether; a ketal compound such as benzyl dimethyl ketal; or an aromatic compound such as 2-naphthylsulfonium chloride a sulfonium chloride compound; a photoactive lanthanide compound such as 1-benzophenone-1,1-propanedione-2-(o-ethoxycarbonyl)anthracene; diphenyl ketone, benzoin benzoic acid a diphenyl ketone compound such as 3,3'-dimethyl-4-methoxydiphenyl ketone; thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2, 4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2,4-diethylthioxanthone, 2,4-diisopropylthioxanthone, etc. Thiophenone ketone compound; camphorquinone; halogenated ketone醯 碄 碄 碄; 醯 磷酸盐 phosphate. The amount of the photopolymerization initiator to be added is preferably 0.01 to 5 parts by mass based on 100 parts by mass of the acrylic copolymer.
由於黏著劑層12含放射線聚合性化合物及光聚合引發劑，因此藉由選擇照射光的範圍，可形成以所望的位置、大小及形狀來硬化之黏著劑層12的部分及未硬化之黏著劑層12的部分。因此，可階段性地分開形成黏著劑層12之硬化的部分，所以在將環框貼於黏著劑層12時，可在比黏著劑層12的環框還要外側的部分照射光，而使該部分的黏著力降低，剝離接著劑層13。其結果，不必將接著劑層13及覆蓋該接著劑層13的黏著薄膜14預先切割成所定的形狀，所以在將晶圓加工用薄膜10當作製品來捲成滾筒狀時，在接著劑層13與黏著薄膜14的層疊部分所產生的階差也不存在，因此可防止在接著劑層13發生轉印痕。Since the adhesive layer 12 contains a radiation polymerizable compound and a photopolymerization initiator, a portion of the adhesive layer 12 which is hardened at a desired position, size, and shape, and an uncured adhesive can be formed by selecting a range of irradiation light. Part of layer 12. Therefore, the hardened portion of the adhesive layer 12 can be formed in a stepwise manner, so that when the ring frame is attached to the adhesive layer 12, light can be irradiated to a portion outside the ring frame of the adhesive layer 12, thereby making it possible to The adhesion of this portion is lowered, and the adhesive layer 13 is peeled off. As a result, it is not necessary to previously cut the adhesive layer 13 and the adhesive film 14 covering the adhesive layer 13 into a predetermined shape. Therefore, when the wafer processing film 10 is rolled into a roll shape as a product, the adhesive layer is formed. The step difference between the laminated portion of the adhesive film 14 and the adhesive film 14 does not exist, so that transfer marks can be prevented from occurring in the adhesive layer 13.
如圖2所示，第1實施形態的變形例的晶圓加工用薄膜50是在第1實施形態的晶圓加工用薄膜10(圖1)的接著劑層13側全面設有可剝離的保護薄膜17。具體而言，對於具有黏著薄膜14及接著劑層13’的切割‧黏晶薄膜15’更在接著劑層13’上設置保護薄膜17，該黏著薄膜14是由基材薄膜11及設於基材薄膜11上的黏著劑層12所構成，該接著劑層13’是設於黏著劑層12上。保護薄膜17是具有放射線遮蔽性。而且，在保護薄膜17形成有對應於環框的切口17a。切口17a可分別形成於當環框被貼著時環框的內周及外周所位置的部分，但亦可只形成於內周所位置的部分。並且，接著劑層13’也在對應於保護薄膜17的切口17a之位置形成有切口13b。As shown in FIG. 2, the wafer processing film 50 according to the modification of the first embodiment is provided with peelable protection on the side of the adhesive layer 13 of the wafer processing film 10 (FIG. 1) of the first embodiment. Film 17. Specifically, a protective film 17 is further provided on the adhesive layer 13' for the cut/peel film 15' having the adhesive film 14 and the adhesive layer 13', and the adhesive film 14 is provided on the base film 11 and The adhesive layer 12 is formed on the material film 11, and the adhesive layer 13' is provided on the adhesive layer 12. The protective film 17 is provided with radiation shielding properties. Further, a slit 17a corresponding to the ring frame is formed in the protective film 17. The slits 17a may be formed at portions where the inner circumference and the outer circumference of the ring frame are respectively attached when the ring frame is attached, but may be formed only at a position at the inner circumference. Further, the adhesive layer 13' is also formed with a slit 13b at a position corresponding to the slit 17a of the protective film 17.
具有放射線遮蔽性，且形成有對應於環框的切口17a之保護薄膜17是可剝離地貼合於接著劑層13’的表面，因此若將對應於環框的保護薄膜17部分剝離後，使晶圓加工用薄膜50曝光，則可只使對應於環框的黏著劑層12部分感光、硬化，使硬化的部分的黏著力減弱。因此，可以切口13b作為基點來剝離位於黏著力被減弱的部分上的接著劑層部分。所以，不必將黏著薄膜14及接著劑層13’預先切割成所定的形狀。其結果，在將晶圓加工用薄膜50當作製品來捲成滾筒狀時，可防止在接著劑層13’發生轉印痕。並且，在剝離全面保護薄膜17後，不必貼著另外準備的光罩，可削減工數及成本。The protective film 17 having the radiation shielding property and having the slit 17a corresponding to the ring frame is detachably attached to the surface of the adhesive layer 13', so that if the protective film 17 corresponding to the ring frame is partially peeled off, When the film 50 for wafer processing is exposed, only the portion of the adhesive layer 12 corresponding to the ring frame can be photosensitive and hardened, and the adhesion of the hardened portion can be weakened. Therefore, the portion of the adhesive layer on the portion where the adhesive force is weakened can be peeled off by the slit 13b as a base point. Therefore, it is not necessary to previously cut the adhesive film 14 and the adhesive layer 13' into a predetermined shape. As a result, when the wafer processing film 50 is rolled into a roll shape as a product, transfer marks can be prevented from occurring in the adhesive layer 13'. Further, after the full protective film 17 is peeled off, it is not necessary to attach a separately prepared photomask, and the number of operations and cost can be reduced.
另外，晶圓加工用薄膜50的構成要素之接著劑層13’是由與使用於上述晶圓加工用薄膜10的接著劑層13同樣的材料所構成，使用於晶圓加工用薄膜50的黏著薄膜14也是由與使用於上述晶圓加工用薄膜10的黏著薄膜14同樣的材料所構成。In addition, the adhesive layer 13' of the constituent elements of the wafer processing film 50 is made of the same material as the adhesive layer 13 used for the wafer processing film 10, and is used for adhesion of the wafer processing film 50. The film 14 is also made of the same material as the adhesive film 14 used for the film for wafer processing 10 described above.
使用於晶圓加工用薄膜50的保護薄膜17是只要具有放射線遮蔽性者，便可使用聚對苯二甲二乙酯(PET)系、聚乙烯系、其他被施以脫模處理的薄膜等周知者。保護薄膜17的厚度並無特別加以限定，可酌量設定，但以25~50μm為理想。The protective film 17 used for the film 50 for wafer processing can be a polyethylene terephthalate (PET) type, a polyethylene type, or another film which is subjected to mold release treatment, as long as it has radiation shielding properties. Know the person. The thickness of the protective film 17 is not particularly limited and may be set as appropriate, but it is preferably 25 to 50 μm.
在具有放射線遮蔽性的薄膜之中，具有紫外線遮蔽性的薄膜，例如可舉使用丙烯系樹脂、氟系樹脂、聚氯乙烯系樹脂等的熱可塑性樹脂作為主成分，在該等的熱可塑性樹脂中添加入紫外線吸收劑而形成熱可塑性樹脂組成物的薄膜。作為上述主成分使用的熱可塑性樹脂亦可單獨使用，或併用2種類以上，但為了長期間確保良好的耐候性，較理想是使用丙烯系樹脂或氟系樹脂。上述丙烯系樹脂及氟系樹脂是可分別單獨使用，或兩者併用。Among the films having a radiation shielding property, a film having an ultraviolet shielding property, for example, a thermoplastic resin such as a propylene resin, a fluorine resin or a polyvinyl chloride resin is used as a main component, and these thermoplastic resins are used. A film in which a UV absorber is added to form a thermoplastic resin composition. The thermoplastic resin to be used as the main component may be used alone or in combination of two or more. However, in order to ensure good weather resistance for a long period of time, it is preferred to use a propylene resin or a fluorine resin. The propylene resin and the fluorine resin may be used singly or in combination.
又，上述紫外線吸收劑並無特別加以限定，例如可舉二苯基酮系紫外線吸收劑、苯并三唑系紫外線吸收劑、氰基丙烯酸酯系紫外線吸收劑等，加以適用。該等的紫外線吸收劑可單獨使用，或2種類以上併用。In addition, the ultraviolet absorber is not particularly limited, and examples thereof include a diphenylketone-based ultraviolet absorber, a benzotriazole-based ultraviolet absorber, and a cyanoacrylate-based ultraviolet absorber. These ultraviolet absorbers may be used singly or in combination of two or more types.
本發明的第2實施形態的晶圓加工用薄膜是與本發明的第1實施形態的晶圓加工用薄膜10(參照圖1)同樣，具有黏著薄膜(相當於圖1的符號14)及接著劑層(相當於圖1的符號13)，該黏著薄膜是由基材薄膜(相當於圖1的符號11)及設於基材薄膜上的黏著劑層(相當於圖1的符號12)所構成，該接著劑層是被設於黏著劑層上，黏著薄膜及接著劑層是未被預先切割成對應於環框或半導體晶圓的形狀，在接著劑層對應於環框的內周之位置設有切口。本發明的第2實施形態的晶圓加工用薄膜與本發明的第1實施形態的晶圓加工用薄膜10的相異點，是第1實施形態的晶圓加工用薄膜10的黏著薄膜14的黏著劑層12為含放射線聚合性化合物及光引發劑者，相對的，第2實施形態的晶圓加工用薄膜的黏著薄膜的黏著劑層是取代放射線聚合性化合物及光引發劑，而含熱聚合性化合物者。由於第2實施形態的晶圓加工用薄膜的黏著劑層是含熱聚合性化合物，因此藉由選擇照射熱的範圍，可形成以所望的位置、大小及形狀來硬化之黏著劑層的部分及未硬化之黏著劑層的部分。The film for processing a wafer according to the second embodiment of the present invention has an adhesive film (corresponding to the reference numeral 14 in Fig. 1) and the like, similarly to the wafer processing film 10 (see Fig. 1) of the first embodiment of the present invention. a coating layer (corresponding to the symbol 13 in Fig. 1), the adhesive film is composed of a base film (corresponding to the reference numeral 11 in Fig. 1) and an adhesive layer (corresponding to the symbol 12 of Fig. 1) provided on the base film The adhesive layer is disposed on the adhesive layer, and the adhesive film and the adhesive layer are not previously cut into a shape corresponding to the ring frame or the semiconductor wafer, and the adhesive layer corresponds to the inner circumference of the ring frame. There is a cut in the position. The wafer processing film of the second embodiment of the present invention is different from the wafer processing film 10 of the first embodiment of the present invention, and is the adhesive film 14 of the wafer processing film 10 of the first embodiment. The adhesive layer 12 is a radiation-polymerizable compound and a photoinitiator. In contrast, the adhesive layer of the adhesive film of the wafer processing film of the second embodiment is a substitute for a radiation-polymerizable compound and a photoinitiator, and contains heat. Polymeric compound. Since the adhesive layer of the wafer processing film of the second embodiment contains a thermally polymerizable compound, by selecting a range of irradiation heat, a portion of the adhesive layer which is cured at a desired position, size, and shape can be formed. Part of the uncured adhesive layer.
因此，與本發明的第1實施形態的晶圓加工用薄膜10時同樣，本發明的第2實施形態的晶圓加工用薄膜時也可階段性地分開形成黏著劑層之硬化的部分，所以在將環框貼於黏著劑層時，可在比黏著劑層的環框還要外側的部分照射熱，而使該部分的黏著力降低，剝離接著劑層。其結果，不必將接著劑層及覆蓋該接著劑層的黏著薄膜預先切割成所定的形狀，所以在將晶圓加工用薄膜當作製品來捲成滾筒狀時，在接著劑層與黏著薄膜的層疊部分所產生的階差也不存在，因此可防止在接著劑層發生轉印痕。Therefore, in the film for processing a wafer according to the second embodiment of the present invention, the cured portion of the adhesive layer can be formed in a stepwise manner in the same manner as in the case of the film for processing a wafer 10 according to the first embodiment of the present invention. When the ring frame is attached to the adhesive layer, heat can be irradiated to a portion outside the ring frame of the adhesive layer, and the adhesive force of the portion is lowered to peel off the adhesive layer. As a result, it is not necessary to previously cut the adhesive layer and the adhesive film covering the adhesive layer into a predetermined shape. Therefore, when the film for wafer processing is rolled into a roll shape as a product, the adhesive layer and the adhesive film are used. The step produced by the laminated portion is also absent, so that transfer marks can be prevented from occurring in the adhesive layer.
熱聚合性化合物是藉由熱來聚合者，例如可舉縮水甘油基、丙烯醯基、異丁烯醘基、羥基、羧基、三聚異氰酸基、氨基、醯氨基等具有官能基的化合物，該等是單獨或組合2種類以上皆可使用。另外使用：在考量晶圓加工用薄膜的耐熱性之後，藉由熱來予以硬化，而使黏著劑層之硬化的部分的黏著力降低，在接著劑層與黏著劑層之間可剝離者。The thermally polymerizable compound is a compound which is polymerized by heat, and examples thereof include a compound having a functional group such as a glycidyl group, an acrylonitrile group, an isobutylene group, a hydroxyl group, a carboxyl group, a trimeric isocyanate group, an amino group or a decylamino group. Either two or more types can be used alone or in combination. Further, after considering the heat resistance of the film for wafer processing, it is hardened by heat, and the adhesive force of the hardened part of the adhesive layer is lowered, and it is peelable between the adhesive layer and the adhesive layer.
另外，在本發明的第2實施形態中，亦可適用與第1實施形態的變形例同樣的第2實施形態的變形例。Further, in the second embodiment of the present invention, a modification of the second embodiment similar to the modification of the first embodiment can be applied.
利用圖3及圖4來說明使用第1實施形態的晶圓加工用薄膜10來製造半導體裝置的方法。圖3及圖4是說明使用第1實施形態的晶圓加工用薄膜10來製造半導體裝置的方法的圖，圖3(A)是表示脫模薄膜16貼附於接著劑層13上的狀態之晶圓加工用薄膜的剖面圖。又，圖3(B)是表示晶圓W貼附於晶圓加工用薄膜的狀態之晶圓及晶圓加工用薄膜的剖面圖，圖3(C)是表示使黏著劑層12的一部分硬化，使硬化之黏著劑層部分12a上的接著劑層剝離的狀態之晶圓及晶圓加工用薄膜的剖面圖，圓3(D)是表示晶圓被切割的狀態之晶圓及晶圓加工用薄膜的剖面圖，圖3(E)是表示使對應於晶圓的位置的黏著劑層部分12b硬化的狀態之晶圓及晶圓加工用薄膜的剖面圖。又，圖4(A)是表示將貼合有被切割的晶圓之晶圓加工用薄膜搭載於擴展裝置的狀態之晶圓及晶圓加工用薄膜的剖面圖，圖4(B)是表示擴展(Expand)後之晶圓及晶圓加工用薄膜的剖面圖。A method of manufacturing a semiconductor device using the wafer processing film 10 of the first embodiment will be described with reference to FIGS. 3 and 4 . 3 and FIG. 4 are views for explaining a method of manufacturing a semiconductor device using the wafer processing film 10 of the first embodiment, and FIG. 3(A) shows a state in which the release film 16 is attached to the adhesive layer 13. A cross-sectional view of a film for wafer processing. 3(B) is a cross-sectional view showing a wafer and a wafer processing film in a state in which the wafer W is attached to the wafer processing film, and FIG. 3(C) is a view showing a part of the adhesive layer 12 being hardened. A cross-sectional view of the wafer and the wafer processing film in a state in which the adhesive layer on the cured adhesive layer portion 12a is peeled off, and the circle 3 (D) is a wafer and wafer processing in a state in which the wafer is diced. FIG. 3(E) is a cross-sectional view showing a wafer and a wafer processing film in a state in which the adhesive layer portion 12b corresponding to the position of the wafer is cured. 4(A) is a cross-sectional view showing a wafer and a wafer processing film in a state in which a wafer processing film to which a wafer to be diced is bonded is mounted on an expansion device, and FIG. 4(B) shows A cross-sectional view of a film for wafer and wafer processing after expansion.
如圖3(A)所示，首先，準備一晶圓加工用薄膜，其係對於具有黏著薄膜14及接著劑層13的切割‧黏晶薄膜15，從接著劑層13側來貼附有脫模薄膜16，該黏著薄膜14是由基材薄膜11及設於基材薄膜11上的黏著劑層12所構成，該接著劑層13是設有形成對應於半導體晶圓的外周的形狀之切口13a。由於晶圓加工用薄膜是接著劑層13等未被預先切割，所以在作為貼合有脫模薄膜16的製品來捲成滾筒狀時，在接著劑層13與黏著薄膜14的層疊部分所產生的階差也不存在，因此可防止在接著劑層13發生轉印痕。As shown in FIG. 3(A), first, a film for wafer processing is prepared, which is attached to the dicing film 1 having the adhesive film 14 and the adhesive layer 13 from the adhesive layer 13 side. The mold film 16 is composed of a base film 11 and an adhesive layer 12 provided on the base film 11, and the adhesive layer 13 is provided with a slit formed in a shape corresponding to the outer circumference of the semiconductor wafer. 13a. Since the film for wafer processing is not previously cut by the adhesive layer 13 or the like, it is produced in a laminated portion of the adhesive layer 13 and the adhesive film 14 when the product to which the release film 16 is bonded is wound into a roll shape. The step difference does not exist, so that transfer marks can be prevented from occurring in the adhesive layer 13.
其次，如圖3(B)所示，從晶圓加工用薄膜剝下脫模薄膜16，由切割‧黏晶薄膜15的接著劑層13側來對接著劑層13貼合半導體晶圓W的背面。另外，在以後的工程中，不是將環框20及半導體晶圓W貼合於長狀的切割‧黏晶薄膜15的狀態下使搬送於各工程，而是使環框20及半導體晶圓W各1組個別地搬送時，只要在貼合環框20之前或後，沿著環框20的外周來切斷切割‧黏晶薄膜15即可。Next, as shown in FIG. 3(B), the release film 16 is peeled off from the wafer processing film, and the semiconductor wafer W is bonded to the adhesive layer 13 from the adhesive layer 13 side of the dicing film 1. back. In addition, in the subsequent work, the ring frame 20 and the semiconductor wafer W are not bonded to each other in the state of the long dicing die-bonding film 15, and the ring frame 20 and the semiconductor wafer W are transferred. When each of the groups is individually transported, the dicing film 1 may be cut along the outer circumference of the ring frame 20 before or after the ring frame 20 is bonded.
其次，將含於黏著劑層12的光引發劑會反應之波長的紫外線照射至黏著劑層12之中對應於半導體晶圓W以外的黏著劑層部分12a而使硬化。此時，若由切割‧黏晶薄膜15的上方，亦即貼合半導體晶圓W的側來照射紫外線，則半導體晶圓W會成為遮罩，對對應於半導體晶圓W以外的黏著劑層部分12a照射紫外線。使對應於半導體晶圓W以外的黏著劑層部分12a的黏著力降低的結果，如圖3(C)所示，以設於接著劑層13的切口13a作為基點，可只剝離硬化之黏著劑層部分12a上的接著劑層13。Next, ultraviolet rays having a wavelength at which the photoinitiator contained in the adhesive layer 12 reacts are irradiated to the adhesive layer 12a other than the semiconductor wafer W in the adhesive layer 12 to be hardened. At this time, when the ultraviolet ray is irradiated from the side of the dicing film 1, which is the side where the semiconductor wafer W is bonded, the semiconductor wafer W becomes a mask, and the adhesive layer corresponding to the semiconductor wafer W is applied. Part 12a is exposed to ultraviolet light. As a result of lowering the adhesive force corresponding to the adhesive layer portion 12a other than the semiconductor wafer W, as shown in FIG. 3(C), the hardened adhesive can be peeled off only by using the slit 13a provided in the adhesive layer 13 as a base point. The adhesive layer 13 on the layer portion 12a.
在晶圓加工用薄膜的外周部、亦即黏著力降低的黏著劑層部分12a，利用剩下的黏著力施加壓力來貼合環框20，使用未圖示的切割刀來機械性地切斷半導體晶圓W，分割成複數的半導體晶片C的同時，接著劑層13也分割(圖3(D))。In the outer peripheral portion of the film for processing a wafer, that is, the adhesive layer portion 12a having a reduced adhesive force, the ring frame 20 is bonded by a pressure applied by the remaining adhesive force, and mechanically cut by a cutter (not shown). The semiconductor wafer W is divided into a plurality of semiconductor wafers C, and the adhesive layer 13 is also divided (FIG. 3(D)).
然後，如圖3(E)所示，從切割‧黏晶薄膜15的下方將紫外線照射至對應於被分割成複數的半導體晶片C的晶圓的位置之黏著劑層部分12b而使硬化。使該部分12b的黏著力降低的結果，可使該部分12b上的接著劑層13剝離。Then, as shown in FIG. 3(E), ultraviolet rays are irradiated from the lower side of the dicing film 1 to the adhesive layer portion 12b corresponding to the position of the wafer divided into the plurality of semiconductor wafers C to be cured. As a result of lowering the adhesive force of the portion 12b, the adhesive layer 13 on the portion 12b can be peeled off.
以紫外線照射來使對應於被分割成半導體晶片C的晶圓的位置之黏著劑層部分12b硬化後，如圖4(A)所示，將保持被分割的複數個半導體晶片C之晶圓加工用薄膜載置於擴展裝置的平台21上。圖中，符號22是擴展裝置的中空圓柱形狀的頂起構件。After the adhesive layer portion 12b corresponding to the position of the wafer divided into the semiconductor wafer C is cured by ultraviolet irradiation, as shown in FIG. 4(A), wafer processing for holding the divided plurality of semiconductor wafers C is performed. The film is placed on the platform 21 of the expansion device. In the figure, reference numeral 22 is a jack-up member of a hollow cylindrical shape of the expansion device.
然後，如圖4(B)所示，實施擴展工程，其係將黏著薄膜14拉長於環框20的周方向，該黏著薄膜14是由保持被切割的半導體晶片C及接著劑層13的基材薄膜11及黏著劑層12(12a及12b)所構成。具體而言，對於保持被切割的複數個半導體晶片C及接著劑層13的狀態之黏著薄膜14，使中空圓柱形狀的頂起構件22從黏著薄膜14的下面側上昇，將上述黏著薄膜14拉長於環框20的周方向。藉由擴展工程來擴大半導體晶片C彼此間的間隔，提高CCD攝影機等之半導體晶片C的辨識性的同時，可防止拾取時鄰接的半導體晶片C彼此間接觸而造成半導體晶片C彼此間的再接著。Then, as shown in Fig. 4(B), an expansion process is carried out in which the adhesive film 14 is elongated in the circumferential direction of the ring frame 20, and the adhesive film 14 is made of the semiconductor wafer C and the adhesive layer 13 which are held by the cut. The material film 11 and the adhesive layer 12 (12a and 12b) are comprised. Specifically, the adhesive film 14 in a state in which the plurality of semiconductor wafers C and the adhesive layer 13 are cut is held, and the hollow cylindrical shape lifting member 22 is lifted from the lower surface side of the adhesive film 14, and the adhesive film 14 is pulled. It is longer than the circumferential direction of the ring frame 20. By expanding the process to increase the distance between the semiconductor wafers C, and improving the visibility of the semiconductor wafer C such as a CCD camera, it is possible to prevent the adjacent semiconductor wafers C from coming into contact with each other during pick-up and causing the semiconductor wafers C to follow each other. .
實施擴展工程後，在維持擴展黏著薄膜14的狀態下，實施拾取半導體晶片C的拾取工程。具體而言，從黏著薄膜14的下側藉由銷(未圖示)來頂起半導體晶片C的同時，從黏著薄膜14的上面側以吸附冶具(未圖示)來吸附半導體晶片C，藉此連同附著於該半導體晶片C的狀態的接著劑層13來拾取被單片化的半導體晶片C。After the expansion project is carried out, the pick-up process of picking up the semiconductor wafer C is carried out while maintaining the expanded adhesive film 14. Specifically, the semiconductor wafer C is lifted from the lower side of the adhesive film 14 by a pin (not shown), and the semiconductor wafer C is adsorbed from the upper surface side of the adhesive film 14 by an adsorption tool (not shown). This picks up the singulated semiconductor wafer C together with the adhesive layer 13 attached to the state of the semiconductor wafer C.
然後，實施拾取工程後，實施黏晶工程。具體而言，藉由在拾取工程與半導體晶片C一起被拾取的接著劑層13來將半導體晶片C接著於引線架或封裝基板等，製造半導體裝置。Then, after the picking up project is carried out, the die bonding process is carried out. Specifically, the semiconductor device is manufactured by attaching the semiconductor wafer C to the lead frame or the package substrate or the like by the adhesive layer 13 picked up by the pick-up process together with the semiconductor wafer C.
另外，使用第1實施形態的變形例的晶圓加工用薄膜50來製造半導體裝置時，因為該晶圓加工用薄膜50(圖2)具有放射線遮蔽性的同時，形成有對應於環框R的切口17a之保護薄膜17可剝離地被貼合於接著劑層13’的表面，因此藉由剝離對應於保護薄膜17的環框R之部分，可使用在接著劑層13’上未被剝離存在的保護薄膜17作為遮罩。因此，以保護薄膜17作為遮罩，在黏著劑層12對應於環框R的部分照射紫外線來使黏著力降低，剝離除去位於其上的接著劑層13’後，可以和以往進行預先切割加工的切割‧黏晶薄膜15’同樣的工程來製造半導體裝置。When the semiconductor device is manufactured using the wafer processing film 50 according to the modification of the first embodiment, the wafer processing film 50 (FIG. 2) has radiation shielding properties and is formed corresponding to the ring frame R. The protective film 17 of the slit 17a is peelably adhered to the surface of the adhesive layer 13', so that by peeling off the portion of the ring frame R corresponding to the protective film 17, it can be used without being peeled off on the adhesive layer 13'. The protective film 17 serves as a mask. Therefore, by using the protective film 17 as a mask, ultraviolet rays are irradiated to the portion of the adhesive layer 12 corresponding to the ring frame R to lower the adhesive force, and after removing the adhesive layer 13' located thereon, the pre-cut processing can be performed in the past. The same process is used to manufacture semiconductor devices.
另外，在使用第1實施形態的晶圓加工用薄膜10來製造半導體裝置的方法中，因為使用含反應於黏著劑層12的光引發劑之晶圓加工用薄膜，所以將紫外線分成2階段照射，而使硬化的黏著劑層102的位置、大小、形狀變化。但，在使用第2實施形態的晶圓加工用薄膜時，因為在黏著劑層12中含熱聚合性化合物，所以使黏著劑層部分12a的硬化及黏著劑層部分12b的硬化，在選擇熱的照射範圍下，分成2階段進行熱硬化，而使硬化的黏著劑層12的位置、大小、形狀變化。In the method of manufacturing a semiconductor device using the wafer processing film 10 of the first embodiment, since a film for wafer processing containing a photoinitiator reacted on the adhesive layer 12 is used, the ultraviolet ray is divided into two stages of irradiation. The position, size, and shape of the hardened adhesive layer 102 are changed. However, when the film for wafer processing of the second embodiment is used, since the adhesive layer 12 contains a thermally polymerizable compound, the adhesive layer portion 12a is cured and the adhesive layer portion 12b is cured. In the irradiation range, the heat is hardened in two stages, and the position, size, and shape of the hardened adhesive layer 12 are changed.
以上，若根據本實施形態的晶圓加工用薄膜，則在將晶圓加工用薄膜捲成滾筒狀時，可充分抑制在接著劑層發生轉印痕，防止因空氣被捲入接著劑層與半導體晶圓之間而造成接著劑層與半導體晶圓之間的密合性降低的同時，可在將半導體晶片接著於引線架或封裝基板、或其他的半導體晶片時，防止接著不良、或晶圓的加工時的狀態不佳。又，若根據使用本發明的晶圓加工用薄膜來製造半導體裝置的方法，則可不用大規模變更原有的設備來變更設計所望的半導體裝置。As described above, when the film for wafer processing is wound into a roll shape, it is possible to sufficiently prevent transfer marks from occurring in the adhesive layer and prevent air from being caught in the adhesive layer and the semiconductor. Preventing adhesion between the wafer and the semiconductor wafer while the wafer is being bonded to the lead frame or package substrate, or other semiconductor wafer, preventing the defect or wafer The state of processing is not good. Moreover, according to the method of manufacturing a semiconductor device using the film for wafer processing of the present invention, it is possible to change the semiconductor device desired by design without changing the original device on a large scale.
10，30，50．．．晶圓加工用薄膜10,30,50. . . Wafer processing film
11．．．基材薄膜11. . . Substrate film
12．．．黏著劑層12. . . Adhesive layer
13，13’．．．接著劑層13,13’. . . Subsequent layer
13a，13b．．．接著劑層的切口13a, 13b. . . Subsequent incision
14．．．黏著薄膜14. . . Adhesive film
15，15’．．．切割‧黏晶薄膜15,15’. . . Cutting ‧ bonded film
16．．．脫模薄膜16. . . Release film
17．．．保護薄膜17. . . Protective film
17a．．．保護薄膜的切口17a. . . Protective film incision
20．．．環框20. . . Ring frame
圖1是本實施形態的晶圓加工用薄膜的剖面圖。Fig. 1 is a cross-sectional view showing a film for wafer processing of the embodiment.
圖2是本實施形態的變形例的晶圓加工用薄膜的剖面圖。Fig. 2 is a cross-sectional view showing a film for wafer processing according to a modification of the embodiment.
圖3是說明使用本實施形態的晶圓加工用薄膜來製造半導體裝置的方法。3 is a view for explaining a method of manufacturing a semiconductor device using the film for wafer processing of the embodiment.
圖4是說明使用本實施形態的晶圓加工用薄膜來製造半導體裝置的方法。4 is a view for explaining a method of manufacturing a semiconductor device using the wafer for wafer processing of the embodiment.
圖5是以往的晶圓加工用薄膜的概要圖。FIG. 5 is a schematic view of a conventional film for wafer processing.
圖6(A)是以往的晶圓加工用薄膜的平面圖，(B)是剖面圖。Fig. 6(A) is a plan view showing a conventional film for wafer processing, and Fig. 6(B) is a cross-sectional view.
圖7是貼合切割‧黏晶薄膜與切割用環框的狀態剖面圖。Fig. 7 is a cross-sectional view showing a state in which a dicing die-cut film and a ring frame for cutting are bonded.
圖8是用以說明以往的晶圓加工用薄膜的狀態不佳的模式圖。FIG. 8 is a schematic view for explaining a state in which the conventional film for wafer processing is in a poor state.
10．．．晶圓加工用薄膜10. . . Wafer processing film
11．．．基材薄膜11. . . Substrate film
12．．．黏著劑層12. . . Adhesive layer
13．．．接著劑層13. . . Subsequent layer
13a．．．接著劑層的切口13a. . . Subsequent incision
14．．．黏著薄膜14. . . Adhesive film
15．．．切割‧黏晶薄膜15. . . Cutting ‧ bonded film
Claims (4)
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| JP2009060572A JP2010219086A (en) | 2009-03-13 | 2009-03-13 | Wafer processing film and method for manufacturing semiconductor device using wafer processing film |
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| KR (1) | KR101333341B1 (en) |
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| KR101422603B1 (en) * | 2010-06-18 | 2014-07-23 | 히타치가세이가부시끼가이샤 | Adhesive sheet |
| KR101397686B1 (en) * | 2010-12-06 | 2014-05-22 | 제일모직주식회사 | Base film and adhesive film for semiconductor devices using the same |
| JP5916295B2 (en) * | 2011-04-22 | 2016-05-11 | 古河電気工業株式会社 | Wafer processing tape and method of manufacturing semiconductor device using wafer processing tape |
| KR101903312B1 (en) | 2012-12-26 | 2018-10-01 | 히타치가세이가부시끼가이샤 | Expansion method, method for manufacturing semiconductor devices, and semiconductor device |
| JP6021687B2 (en) * | 2013-02-25 | 2016-11-09 | 株式会社ディスコ | Laminated wafer processing method |
| CN105940488B (en) * | 2014-02-21 | 2018-06-26 | 株式会社村田制作所 | Electronic unit donor and its manufacturing method |
| KR102455987B1 (en) * | 2014-07-22 | 2022-10-18 | 아피쿠 야마다 가부시키가이샤 | Molding die, molding device, method for manufacturing molded article and resin molding method |
| CN112967992B (en) * | 2020-12-07 | 2022-09-23 | 重庆康佳光电技术研究院有限公司 | Transfer method of epitaxial structure |
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| JP3669196B2 (en) * | 1998-07-27 | 2005-07-06 | 日東電工株式会社 | UV curable adhesive sheet |
| JP4107417B2 (en) * | 2002-10-15 | 2008-06-25 | 日東電工株式会社 | Tip workpiece fixing method |
| CN100463114C (en) * | 2003-12-15 | 2009-02-18 | 古河电气工业株式会社 | Tape for wafer processing and manufacturing method thereof |
| JP2005203749A (en) * | 2003-12-15 | 2005-07-28 | Furukawa Electric Co Ltd:The | Tape for wafer processing and manufacturing method thereof |
| JP4781635B2 (en) * | 2004-03-30 | 2011-09-28 | 日東電工株式会社 | Manufacturing method of laser processed product and protective sheet for laser processing |
| MY138566A (en) * | 2004-03-15 | 2009-06-30 | Hitachi Chemical Co Ltd | Dicing/die bonding sheet |
| JP4776189B2 (en) * | 2004-08-03 | 2011-09-21 | 古河電気工業株式会社 | Wafer processing tape |
| JP4776188B2 (en) * | 2004-08-03 | 2011-09-21 | 古河電気工業株式会社 | Semiconductor device manufacturing method and wafer processing tape |
| JP2007019151A (en) * | 2005-07-06 | 2007-01-25 | Furukawa Electric Co Ltd:The | Tape for processing wafer and method of manufacturing chip using the same |
| US20100112272A1 (en) * | 2006-10-06 | 2010-05-06 | Sumitomo Bakelite Co., Ltd. | Film for use in manufacturing semiconductor devices, method for producing the film and semiconductor device |
| JP2008303386A (en) * | 2007-05-08 | 2008-12-18 | Hitachi Chem Co Ltd | Adhesive sheet, method for producing the same, method for producing semiconductor device using the adhesive sheet, and the semiconductor device |
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| KR101333341B1 (en) | 2013-11-28 |
| TW201040242A (en) | 2010-11-16 |
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| WO2010104071A1 (en) | 2010-09-16 |
| KR20110129952A (en) | 2011-12-02 |
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