KR101119802B1 - Tape for processing wafer - Google Patents

Abstract

The wafer processing tape which is excellent in the productivity of a tape for a wafer process, and which can suppress generation | occurrence | production of the double die in a pick-up process, and the problem that a semiconductor chip cannot be picked up is provided. The tape 10 for wafer processing has a rectangular shape shown by JIS K7128-3 "Tear strength test method-part 3: rectangular tear method of the plastic film and sheet | seat" which made the adhesive film 12 the rectangular tear test piece. In the test method of a tear test piece, the tear strength of the rectangular tear test piece 100 is set to C, and a cut of approximately 1 mm in length from the distal end of the right angle part on a center line passing through the distal end portion of the rectangular tear test piece 100. When the tear strength of the rectangular tear test piece 110 when the portion 115 is inserted is D, the strength ratio D / C is 0.8 or less. In addition, in the measurement of the elongation rate by the 2nd type test piece of JISK7113, the elongation rate of the adhesive bond layer 13 which is the 2nd type test piece 120 is 150% or more.

Description

Tape for Wafer Processing {TAPE FOR PROCESSING WAFER}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a tape for wafer processing used in a dicing step, pickup step, die bonding step, and the like of a semiconductor wafer.

In the manufacturing process of a semiconductor device, a process of cutting and dividing a semiconductor wafer into semiconductor chip units, a process of picking up a separated semiconductor chip, and a die bonding process of adhering the picked chip to a lead frame or a package substrate, etc. This is carried out.

In recent years, as a tape for wafer processing used in the manufacturing process of the said semiconductor device, for example, the tape for a wafer process in which the adhesive layer was formed on the base film, or the tape for a wafer process which has a structure by which the adhesive bond layer was further laminated on the adhesive layer (die Single die bond film: DDF) has been proposed and has already been put into practical use.

Miniaturization and thinning of a semiconductor chip advance, and the problem of breakage of a semiconductor chip in a dicing process, generation | occurrence | production of a cutting semiconductor, and the expandability of the tape for a wafer process arises. Therefore, as a tape for wafer processing which solves such a problem, the wafer processing tape which is excellent in expandability and high in the restoring force of the tape after expanded is proposed (for example, refer patent document 1).

Japanese Patent Laid-Open No. 2007-63340

However, in the manufacturing process of the semiconductor device, in the case of using the above-mentioned tape for wafer processing, when cutting and separating the semiconductor wafer into semiconductor chip units together with the adhesive layer, the tape for wafer processing having the property of being easy to stretch and difficult to break. By the adhesive layer, a semiconductor chip (hereinafter referred to as a semiconductor chip) having an individual fragmented adhesive layer may be formed, or semiconductor chips cut and separated by an adhesive layer having a property of being easily refused may be refused together. In the chip pick-up process, there was a problem that a semiconductor chip could not be picked up, or a problem (double die) of picking up a plurality of adjacent semiconductor chips together occurred. In particular, when the tape for wafer processing in which the thickness of an adhesive bond layer is 40 micrometers or more was used, the above-mentioned problem generate | occur | produced many.

Accordingly, the present invention has been made in order to solve the above problems, and is excellent in precut workability, that is, excellent in productivity of the tape for wafer processing, and it is impossible to pick up a semiconductor chip or to generate a double die in the pick-up process. It is an object of the present invention to provide a tape for wafer processing that can suppress occurrence of a problem.

MEANS TO SOLVE THE PROBLEM As a result of earnestly examining the said subject, in the tape for wafer processing in which the base film, the adhesive layer, and the adhesive bond layer were formed in this order, it pays attention to the laminated body (adhesive film) formed from the base film and the adhesive layer, In the test method of a rectangular tear test piece shown by JIS K 7128-3 "Tear strength test method-part 3: rectangular tear method of plastic films and sheets" which used the adhesive film as a rectangular tear test piece, it is a rectangular type. When the tear strength of the tear test piece is C and the tear strength of the rectangular tear test piece having a cut portion of approximately 1 mm in length from the tip of the right angle part is set to D on the center line passing through the tip of the right angle part of the rectangular tear test piece. By using the wafer processing tape having an intensity ratio (D / C) of 0.8 or less, the expandability of the wafer processing tape is excellent and the pickup It found that the occurrence of the problem that it is impossible to pick up the double die of a semiconductor chip or generated in the forward can be suppressed, and have completed the present invention.

That is, the tape for wafer processing which concerns on the 1st aspect of this invention is a tape for wafer processing in which the base film, the adhesive layer, and the adhesive bond layer were formed in this order, and the laminated body formed from the said base film and the said adhesive layer was a rectangular tear test piece. In the measurement of the tear strength by the rectangular tear method of JIS K 7128-3, which was used as, on the center line passing the tip of the rectangular part of the rectangular tear test piece as the tear strength of the rectangular tear test piece, When the tear strength of the rectangular tear test piece with a cut portion of approximately 1 mm in length is inserted from the tip of the rectangular portion, the strength ratio (D / C) is 0.8 or less.

In the tape for wafer processing which concerns on the 2nd aspect of this invention, the elongation rate of the said adhesive bond layer of the tape for wafer processing which concerns on the 1st aspect of this invention makes the said adhesive bond layer in the measurement of the elongation rate by the type 2 test piece of JISK7113. When it is set as the said No. 2 type test piece, it is characterized by 150% or more.

By using the wafer processing tape of the present invention, the productivity of the wafer processing tape is excellent, the expandability of the wafer processing tape is excellent, the occurrence of problems such as the occurrence of a double die in the pick-up process and the inability to pick up the semiconductor chip. Can be suppressed. In particular, in the case where the thickness of the adhesive layer is 40 µm or more, the above-described problem is likely to occur, the productivity of the tape for wafer processing is excellent, the expandability of the tape for wafer processing is excellent, and the occurrence of a double die in the pick-up process The problem that the semiconductor chip cannot be picked up can be suppressed.

1 is a cross-sectional view showing a wafer processing tape according to an embodiment of the present invention.
(A) is a top view of a rectangular tear test piece, (b) is a top view of a rectangular tear test piece which inserted the cutting part.
3 is a plan view of a No. 2 type test piece.
4 is a view in which a semiconductor wafer is bonded onto a tape for wafer processing;
5 is a diagram for explaining a dicing step;
6 is a view for explaining an expansion process;
7 is a diagram for explaining a pickup process.

EMBODIMENT OF THE INVENTION Below, embodiment of this invention is described in detail based on drawing.

1: is sectional drawing which shows the tape 10 for a wafer process which concerns on this embodiment. 2: (a) is a top view of a rectangular tear test piece, (b) is a top view of a rectangular tear test piece which inserted the cutting part. 3 is a plan view of a arc-shaped test piece. It is a figure for demonstrating the state which bonded the semiconductor wafer on the tape for a wafer process, and FIG. 5 is a figure for demonstrating a dicing process. 6 is a view for explaining the expansion process, and FIG. 7 is a view for explaining the pickup process.

As shown in FIG. 1, the tape 10 for wafer processing which concerns on this embodiment is the adhesive film 12 which consists of a film-form base film 12a and the adhesive layer 12b formed on it, and this adhesive film It has the adhesive bond layer 13 laminated | stacked on (12). Thus, in the tape 10 for a wafer process, the base film 12a, the adhesive layer 12b, and the adhesive bond layer 13 are formed in this order.

In addition, the adhesive layer 12b may be comprised by one adhesive layer, and may be comprised by what laminated | stacked two or more adhesive layers. In addition, in FIG. 1, in order to protect the adhesive bond layer 13, the state in which the peeling liner 11 is provided in the tape 10 for a wafer process is shown.

The adhesive film 12 and the adhesive bond layer 13 may be cut | disconnected (precut) to predetermined shape previously according to a use process and an apparatus. The tape 10 for a wafer process of this invention includes the form cut | disconnected for every semiconductor wafer, and the form which wound up the elongate film in which the plurality was formed in roll shape.

Hereinafter, each component of the tape 10 for a wafer process of this embodiment is demonstrated in detail.

(Adhesive layer)

After the semiconductor wafer 1 (refer FIG. 4) etc. are bonded and diced, the adhesive bond layer 13 peels from the adhesive film 12 at the time of picking up the semiconductor chip 2 (refer FIG. 7), and a semiconductor chip. It attaches to (2) and is used as an adhesive agent when fixing the semiconductor chip 2 to a board | substrate or a lead frame. Therefore, the adhesive bond layer 13 has the peelability which can peel from the adhesion film 12 in the state attached to the individual fragmented semiconductor chip 2 in the pick-up process (refer FIG. 7), and also In the die bonding step, the semiconductor chip 2 has sufficient adhesion reliability in order to adhesively fix the semiconductor chip 2 to a substrate or a lead frame.

The adhesive layer 13 is a film formed of an adhesive in advance, for example, a known polyimide resin, polyamide resin, polyetherimide resin, polyamideimide resin, polyester resin, polyesterimide resin, Phenoxy resins, polysulfone resins, polyether sulfone resins, polyphenylene sulfide resins, polyether ketone resins, chlorinated polypropylene resins, acrylic resins, polyurethane resins, epoxy resins, polyacrylamide resins, melamine resins, and mixtures thereof Can be used. In addition, in order to enhance adhesion to the chip or lead frame, it is preferable to add a silane coupling agent or a titanium coupling agent as an additive to the material or a mixture thereof.

Although the thickness in particular of the adhesive bond layer 13 is not restrict | limited, Usually, about 5-100 micrometers is preferable. In addition, although the adhesive bond layer 13 may be laminated | stacked on the whole surface of the adhesive layer 12b of the adhesive film 12, the adhesive bond layer (precut) cut | disconnected (precut) to the shape according to the semiconductor wafer 1 to be bonded previously ( 13) may be laminated on a part of the pressure-sensitive adhesive layer 12b. When the adhesive layer 13 cut | disconnected in the shape according to the semiconductor wafer 1 is laminated | stacked, as shown in FIG. 4, the part to which the semiconductor wafer 1 is bonded is the adhesive bond layer 13, and the ring for dicing The adhesive layer 13 does not exist in the part to which the frame 20 is bonded, and only the adhesive layer 12b of the adhesive film 12 exists. In general, since the adhesive layer 13 is difficult to peel off from the adherend, the ring frame 20 can be bonded to the adhesive film 12 by using the precut adhesive layer 13, and the film peeling after use The effect that it is difficult to generate full residue in the ring frame 20 at the time is obtained.

(Adhesive film)

The adhesive film 12 has sufficient adhesive force to prevent the semiconductor wafer 1 from peeling off when dicing the semiconductor wafer 1, and easily picks up the semiconductor chip 2 after dicing from the adhesive layer 13. It has a low adhesive force to peel off. In this embodiment, the adhesive film 12 used what provided the adhesive layer 12b on the base film 12a as shown in FIG.

The film-shaped base film 12a of the pressure-sensitive adhesive film 12 can be used without particular limitation as long as it is a conventionally known one. However, as described later, in the present embodiment, as the pressure-sensitive adhesive layer 12b, radiation curable material is included in the energy curable material. Since the material of is used, the thing which has radiation permeability is used.

For example, as a material of the base film 12a, polyethylene, polypropylene, ethylene-propylene copolymer, polybutene-1, poly-4-methylpentene-1, ethylene-vinyl acetate copolymer, ethylene-ethyl acrylate copolymer Homopolymers or copolymers of α-olefins such as ethylene-methyl acrylate copolymers, ethylene-acrylic acid copolymers and ionomers or mixtures thereof, polyurethanes, styrene-ethylene-butene copolymers or pentene-based copolymers, polyamides Thermoplastic elastomers such as polyol copolymers and mixtures thereof. In addition, the base film 12a may be a mixture of two or more materials selected from these groups, or may be a single layer or a multilayer. Although the thickness of the base film 12a is not specifically limited, Although it may set suitably, 50-200 micrometers is preferable.

In this embodiment, since the adhesive layer 12b is hardened by irradiating the adhesive film 12 with radiation, such as an ultraviolet-ray, since it is easy to peel off the adhesive layer 12b from the adhesive bond layer 13, an adhesive layer ( The resin of 12b) includes a known chlorinated polypropylene resin, acrylic resin, polyester resin, polyurethane resin, epoxy resin, addition reaction type organopolysiloxane resin, silicone acrylate resin, ethylene-vinyl acetate copolymer used for pressure-sensitive adhesive , Radiation-polymerizable compounds are suitably blended with various elastomers such as ethylene-ethyl acrylate copolymer, ethylene-methyl acrylate copolymer, ethylene-acrylic acid copolymer, polyisoprene, styrene-butadiene copolymer, hydrogenated products thereof, and mixtures thereof. It is preferable to manufacture an adhesive. Moreover, you may add various surfactant and surface leveling agent. Although the thickness of the adhesive layer 12b is not specifically limited, Although it may set suitably, 5-30 micrometers is preferable.

As said radiation polymerizable compound, the low molecular weight compound which has at least 2 or more photopolymerizable carbon-carbon double bonds in the molecule | numerator which can be three-dimensionally networked by light irradiation, or a photopolymerizable carbon-carbon double bond group is a substituent, for example. The polymer and oligomer which have in is used. Specifically, trimethylolpropane triacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, 1,4-butylene Copolymers of acrylic acid and various acrylic esters, such as silicone acrylate, such as glycol diacrylate, 1, 6- hexanediol diacrylate, polyethyleneglycol diacrylate, and oligoester acrylate, are applicable.

In addition to the above acrylate compounds, urethane acrylate oligomers may also be used. The urethane acrylate oligomer is a polyol compound such as a polyester type or a polyether type, and a polyhydric isocyanate compound (for example, 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-size) Acrylate or methacryl having a hydroxyl group to the terminal isocyanatourethane prepolymer obtained by reacting silylene diisocyanate, 1,4-xylylene diisocyanate, diphenylmethane 4,4-diisocyanate, etc. Rate (e.g., 2-hydroxyethyl acrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl acrylate, 2-hydroxypropyl methacrylate, polyethylene glycol acrylate, polyethylene glycol methacrylate And the like). In addition, 2 or more types chosen from said resin may be mixed with the adhesive layer 12b.

In addition to the radiation polymerizable compound which irradiates the adhesive film 12 with radiation to the resin of the adhesive layer 12b, and hardens the adhesive layer 12b, an acrylic adhesive, a photoinitiator, a hardening | curing agent, etc. are mix | blended suitably, and the adhesive layer 12b is carried out. ) May also be prepared.

When using a photoinitiator, For example, isopropyl benzoin ether, isobutyl benzoin ether, benzophenone, Michler's ketone, chloro thioxanthone, dodecyl thioxanthone, dimethyl thioxanthone, diethyl thioxanthone, Benzyl dimethyl ketal, α-hydroxycyclohexylphenyl ketone, 2-hydroxymethylphenylpropane and the like can be used.

The tape for wafer processing 10 which concerns on this embodiment is characterized by the point which has the following structures. In the test method of a rectangular tear test piece shown by JIS K7128-3 "Tear strength test method-part 3: rectangular tear method of plastic film and sheet | seat" which made the adhesive film 12 into a rectangular tear test piece, A tear angle of the rectangular tear test piece 100 is set to C, and a rectangular shape having a cut portion 115 having a length of about 1 mm is inserted from the distal end of the rectangular portion on a center line passing through the distal end of the rectangular tear test piece 100. When the tear strength of the tear test piece 110 is D, it satisfies that the strength ratio (D / C) is 0.8 or less.

Moreover, in the measurement of the elongation rate using the 2nd type test piece of JISK7113, it is satisfying that the elongation rate of the adhesive bond layer 13 which is a 2nd type test piece is 150% or more.

Here, the rectangular tear test piece of the adhesive film 12 used in the test method of the rectangular tear test piece shown by JIS K7128-3 "The tear strength test method of a plastic film and a sheet-Part 3: rectangular tear method". 100 is shown in Fig. 2A. In addition, on the center line passing through the tip of the right angle portion of the right angle tear test piece 100, the right angle tear test piece 110 into which the cut portion 115 of about 1 mm in length is inserted from the tip of the right angle portion is shown in FIG. Illustrated. As shown in (a) and (b) of FIG. 2, the difference between the right angle tear test piece 100 and the right angle tear test piece 110 is that the right angle tear test piece 100 is a test piece without a cut portion. On the other hand, the rectangular tear test piece 110 is a test piece in which a cut portion 115 having a length of approximately 1 mm is formed from the tip end A of the right angle part toward the end point B on the center line passing through the tip A. In addition, the cutting part 115 shown in FIG.2 (b) is described larger than the size of the cutting part 115 with respect to the size of the rectangular tear test piece 110 for convenience of description. Moreover, the 2nd type test piece 120 of JIS K7113 which is the adhesive bond layer 13 used for the measurement of the elongation rate of the adhesive bond layer 13 is shown in FIG.

The strength ratio (D / C) is determined by the relationship between the elongation of the base film 12a and the hardness of the pressure-sensitive adhesive layer 12b. What is necessary is just to use the base film 12a which is hard to extend | stretch when using a soft thing for the adhesive layer 12b using (12b). The elongation rate of the adhesive layer 13 tends to increase when the polymer component is increased, and tends to decrease when the silica filler is increased.

In blade dicing in which the semiconductor wafer 1 is cut in units of the semiconductor chip 2 using the dicing blade 21 (see FIG. 5), the cutting by the dicing blade 21 is usually carried out using an adhesive film ( Up to 12). Therefore, in blade dicing, when the adhesive film 12 is easy to rupture (strength ratio (D / C) is 0.8 or less), that is, when the adhesive film 12 is easy to break, it is easy to stretch and difficult to break. Even when the adhesive layer 13 having a property is thick (40 mu m or more), the adhesive layer 13 tends to be broken and there is a problem that the occurrence of a double die in the pick-up process or the pick-up of a semiconductor chip cannot be carried out. It can suppress occurrence.

(How to use tape for wafer processing)

In the manufacturing process of a semiconductor device, the tape 10 for a wafer process is used as follows.

In FIG. 4, the state in which the semiconductor wafer 1 and the ring frame 20 were bonded to the tape 10 for a wafer process is shown. First, as shown in FIG. 4, the pressure-sensitive adhesive layer 12b of the pressure-sensitive adhesive film 12 is attached to the ring frame 20, and the semiconductor wafer 1 is bonded to the adhesive layer 13. There is no restriction | limiting in these attachment orders, You may adhere the ring layer 20 to the adhesive layer 12b of the adhesive film 12 after bonding the semiconductor wafer 1 to the adhesive bond layer 13. In addition, the adhesion of the adhesive film 12 to the ring frame 20 and the bonding of the semiconductor wafer 1 to the adhesive layer 13 may be simultaneously performed.

And as shown in FIG. 5, the dicing process of the semiconductor wafer 1 is performed, and the process of irradiating an energy ray, for example, an ultraviolet-ray, to the adhesion film 12 is performed subsequently. Specifically, in order to dicing the semiconductor wafer 1 and the adhesive layer 13 by the dicing blade 21, the lower surface of the adhesive film 12 is attached to the wafer processing tape 10 by the adsorption stage 22. Suction support from the side. And the semiconductor wafer 1 and the adhesive bond layer 13 are cut | disconnected by the dicing blade 21 by the semiconductor chip 2 unit, and it is carved individually, and an energy ray is made from the lower surface side of the adhesion film 12 after that. Investigate. This energy ray irradiation hardens the adhesive layer 12b of the adhesive film 12, and reduces the adhesive force. In addition, you may reduce the adhesive force of the adhesive layer 12b of the adhesive film 12 by external magnetic poles, such as heating, instead of irradiation of an energy ray. When the adhesive layer 12b is laminated | stacked and comprised by two or more adhesive layers, even if one layer or whole layer of each adhesive layer is hardened by energy ray irradiation, even if it reduces the adhesive force of one layer or all layers of each adhesive layer, do.

Thereafter, as illustrated in FIG. 6, the pull film that holds the diced semiconductor chip 2 and the adhesive layer 13 is stretched in the radial direction and the circumferential direction of the ring frame 20. Perform the pand process. Specifically, with respect to the adhesive film 12 in the state which hold | maintained the some diced semiconductor chip 2 and the adhesive bond layer 13, the hollow cylindrical pushing-up member 30 is the adhesive film 12 ), The adhesive film 12 is stretched in the radial direction and the circumferential direction of the ring frame 20. The semiconductor generated by expanding the distance between the semiconductor chips 2 by the expansion step, increasing the recognition of the semiconductor chips 2 by a CCD camera or the like, and contacting adjacent semiconductor chips 2 at the time of pick-up. Re-adhesion of the chips 2 can be prevented.

After performing an expand process, the pick-up process of picking up the semiconductor chip 2 is performed in the state which expanded the adhesive film 12 as shown in FIG. Specifically, the semiconductor chip 2 is pushed up by the pin 31 from the lower surface side of the adhesive film 12, and the semiconductor chip 2 is attracted by the adsorption jig 32 from the upper surface side of the adhesive film 12. ), The individual fragmented semiconductor chips 2 are picked up together with the adhesive layer 13.

And after performing a pick-up process, a die bonding process is performed. Specifically, the semiconductor chip 2 is adhered to a lead frame, a package substrate, or the like by the adhesive layer 13 picked up together with the semiconductor chip 2 in the pickup process.

Next, the Example of this invention is described. In addition, this invention is not limited to these Examples.

(Example)

First, after preparing base film 1A-1G shown in following Table 1 and adhesive layer composition 2A-2F shown in following Table 2, the thickness after drying of adhesive layer composition 2A-2F on base film 1A-1G is 10 micrometers. Adhesive layer composition 2A-2F was apply | coated so that it might be dried, and it dried at 110 degreeC for 3 minutes, and produced the adhesive film 12. Subsequently, the adhesive bond layer composition 3A-3D shown in following Table 3 was manufactured, and the adhesive bond layer composition so that the thickness after drying might be 40 micrometer on the peeling liner 11 which consists of a polyethylene-terephthalate film of 25 micrometers in thickness which carried out the mold release process. 3A-3C were apply | coated, and it dried at 140 degreeC for 5 minutes, and produced the adhesive bond layer 13 shown in following Table 3 on the peeling liner 11. In addition, the adhesive bond layer composition 3D also made the adhesive bond layer 13 shown in following Table 3 on the peeling liner 11 so that the thickness after drying might be set to 10 micrometers. And after cutting the adhesive film 12 and the adhesive bond layer 13 to the shape as shown in FIG. 4, the adhesive bond layer 13 is bonded to the adhesive layer 12b side of the adhesive film 12, and is shown below. The wafer processing tape 10 of Examples 1-15 shown in Table 4 and the wafer processing tape of Comparative Examples 1-12 shown in following Table 5 were produced.

(Substrate film)

As base film 1A-1G, the film form base film of 70-150 micrometers of thickness shown in following Table 1 was used.

Substrate film 1A is a film-shaped substrate film having a thickness of 70 µm made of PP / elastomer copolymer, substrate film 1B is a film-shaped substrate film having a thickness of 80 µm made of ionomer resin copolymer, and the substrate film 1C is a film-shaped base film having a thickness of 80 μm made of an ethylene-methacrylic acid copolymer, and base film 1D is a thickness of 80 made of a laminate of an ionomer resin copolymer and an ethylene-methacrylic acid copolymer. It is a film-shaped base film of a micrometer, The base film 1E is a film-shaped base film of 100 micrometers thickness produced by PP / elastomer copolymer, The base film 1F is a 150 micrometer film produced by the ionomer resin copolymer It is a base film of shape, and base film 1G is a 70-micrometer film-form base film produced with the ethylene-vinyl acetate copolymer.

(Production of Adhesive Layer Composition)

As adhesive layer composition 2A-2F, the adhesive layer composition shown in following Table 2 was manufactured. In addition, the unit of Table 2 is a mass part.

<Adhesive Layer Composition 2A>

Adhesive layer composition 2A is an acrylic adhesive. As shown in Table 2, the adhesive layer composition 2A is a radiation curable adhesive layer composition which added 2 mass parts of hardening | curing agents with respect to 100 mass parts of copolymer compounds, and added and mixed 5 mass parts of photoinitiators. In addition, the copolymer compound is a compound having a radiation-curable carbon-carbon double bond and a functional group, and is composed of 2-ethylhexyl acrylate, 2-hydroxyethyl acrylate and methyl methacrylate, and has a mass average molecular weight of 700,000, glass It is a copolymer compound which has a transition temperature (Tg) -64 degreeC and a radiation curable carbon-carbon double bond amount 0.9meq / g. In addition, polyisocyanate compound colonate L (made by Nippon Polyurethanes Co., Ltd., brand name) was used as a hardening | curing agent, and Irgacure 184 (made by Nippon Shiba Co., Ltd. brand name) was used as a photoinitiator.

<Adhesive Layer Composition 2B>

Adhesive layer composition 2B is an acrylic adhesive which reduced the hardening | curing agent than adhesive layer composition 2A. As shown in Table 2, the adhesive layer composition 2B is a radiation curable adhesive layer composition which added 1 mass part of hardening | curing agents with respect to 100 mass parts of copolymer compounds, and added and mixed 5 mass parts of photoinitiators.

<Adhesive Layer Composition 2C>

Adhesive layer composition 2C is an acrylic adhesive which increased the hardening | curing agent than adhesive layer composition 2A. As shown in Table 2, the adhesive layer composition 2C is a radiation curable adhesive layer composition which added 5 mass parts of hardening | curing agents with respect to 100 mass parts of copolymer compounds, and added and mixed 5 mass parts of photoinitiators.

<Adhesive Layer Composition 2D>

Adhesive layer composition 2D is an acrylic adhesive which made the mass mean molecular weight of a copolymer compound larger than adhesive layer composition 2A. As shown in Table 2, the adhesive layer composition 2D is a radiation curable adhesive layer composition which added 2 mass parts of hardening | curing agents with respect to 100 mass parts of copolymer compounds, and added and mixed 5 mass parts of photoinitiators. In addition, the mass average molecular weight of a copolymer compound is 1.1 million.

<Adhesive Layer Composition 2E>

Adhesive layer composition 2E is an acrylic adhesive which made the mass mean molecular weight of a copolymer compound smaller than adhesive layer composition 2A. As shown in Table 2, the adhesive layer composition 2E is a radiation curable adhesive layer composition which added 2 mass parts of hardening | curing agents with respect to 100 mass parts of copolymer compounds, and added and mixed 5 mass parts of photoinitiators. In addition, the mass average molecular weight of a copolymer compound is 200,000.

<Adhesive Layer Composition 2F>

Adhesive layer composition 2F is an acrylic adhesive which changed the copolymer compound of adhesive layer composition 2A, and made the mass mean molecular weight small. As shown in Table 2, the adhesive layer composition 2F is a radiation curable adhesive layer composition which added 2 mass parts of hardening | curing agents with respect to 100 mass parts of copolymer compounds, and added and mixed 5 mass parts of photoinitiators. In addition, the copolymer compound is a compound having a radiation-curable carbon-carbon double bond and a functional group, and is composed of 2-ethyl acrylate, 2-hydroxyethyl acrylate and methyl methacrylate, and has a mass average molecular weight of 200,000 and a glass transition. It is a copolymer compound which has a temperature (Tg) -5 degreeC and the radiation curable carbon-carbon double bond amount 0.9meq / g.

The pressure-sensitive adhesive layer compositions 2A to 2F were applied on the base films 1A to 1G so as to have a dry film thickness of 10 μm, and dried at 110 ° C. for 3 minutes to prepare an adhesive film 12.

(Production of Adhesive Layer Composition)

As adhesive layer composition 3A, the adhesive bond layer composition shown in following Table 3 was manufactured. In addition, the unit of Table 3 is a mass part. In addition, the adhesive layer compositions 3B to 3D were prepared based on the adhesive layer composition 3A.

<Adhesive Layer Composition 3A>

Adhesive layer composition 3A is an epoxy-acrylic adhesive layer composition. As shown in Table 3, cyclohexanone was used for the composition which consists of 55 mass parts of epoxy resins, 45 mass parts of phenol resins, 1.7 mass parts of silane coupling agents (1), 3.2 mass parts of silane coupling agents (2), and 32 mass parts of fillers. 60 parts by mass was added, stirred and mixed, and further kneaded for 90 minutes using a bead mill. 280 parts by mass of acrylic rubber HTR-860P-3 (manufactured by Nagase Chemtex Co., Ltd. product name, weight average molecular weight 800,000) and glycidyl acrylate or glycidyl methacrylate 3% by weight and curing accelerator 0.5 A mass part was added, stirred and mixed, and vacuum degassing to obtain adhesive layer composition 3A. In addition, YDCN-703 (trade name, cresol novolak type epoxy resin, epoxy equivalent 210, molecular weight 1200, softening point 80 degreeC) made from YDCN-703 (made by Toto Kasei Co., Ltd.) is used as an epoxy resin, and Mirex XLC-LL (Mitsui Kaga) The product name, the phenol resin represented by following formula (1), the hydroxyl equivalent 175, the water absorption rate 1.8%, and the heating weight reduction rate 4% at 350 degreeC) were used. In addition, NUC A-189 (brand name made from Nippon Unicar Co., Ltd., (gamma) -mercaptopropyl trimethoxysilane) is used as a silane coupling agent (1), and NUC A-1160 (Nipbon Unika) as a silane coupling agent (2) (Trade name) (gamma) -ureidopropyl triethoxysilane) was used. In addition, aerosil R972 (a filler having an organic group such as methyl group, which is coated with dimethyldichlorosilane on the surface of silica and hydrolyzed in a reactor at 400 ° C) as a filler, trade name of Nippon Aerosol Co., Ltd., Silica, an average particle diameter of 0.016 mu m) was used. As the curing accelerator, Cursol 2PZ-CN (trade name, 1-cyanoethyl-2-phenylimidazole manufactured by Shikoku Chemical Co., Ltd.) was used.

<Adhesive Layer Composition 3B>

Adhesive layer composition 3B is an epoxy-acrylic adhesive layer composition which made elongation rate smaller than adhesive layer composition 3A (elongation rate of half of elongation rate of adhesive layer composition 3A). As shown in Table 3, cyclohexanone was used for the composition which consists of 80 mass parts of epoxy resins, 68 mass parts of phenol resins, 2.1 mass parts of silane coupling agents (1), 3.7 mass parts of silane coupling agents (2), and 363 mass parts of fillers. 55 mass parts was added, stirred and mixed, and further kneaded for 90 minutes using a bead mill. 180 parts by mass of acrylic rubber HTR-860P-3 (manufactured by Nagase Chemtex Co., Ltd. product name, weight average molecular weight 800,000) and glycidyl acrylate or glycidyl methacrylate 3% by weight and curing accelerator 0.6 A mass part was added, stirring and mixing, vacuum degassing, and the adhesive bond layer composition 3B were obtained.

<Adhesive Layer Composition 3C>

Adhesive layer composition 3C is an epoxy-acrylic adhesive layer composition which made elongation rate smaller than adhesive layer composition 3A (elongation rate of 1/4 of elongation rate of adhesive layer composition 3A). As shown in Table 3, cyclohexanone was used for the composition which consists of 110 mass parts of epoxy resins, 90 mass parts of phenol resins, 2.4 mass parts of silane coupling agents (1), 4 mass parts of silane coupling agents (2), and 485 mass parts of fillers. 80 mass parts was added, stirred and mixed, and further kneaded for 90 minutes using a bead mill. 100 parts by mass of acrylic rubber HTR-860P-3 (manufactured by Nagase Chemtex Co., Ltd. product name, weight average molecular weight 800,000) and glycidyl acrylate or glycidyl methacrylate 3% by weight and curing accelerator 0.7 A mass part was added, stirred and mixed, and vacuum degassing to obtain adhesive layer composition 3C.

<Adhesive Layer Composition 3D>

Adhesive layer composition 3D is an epoxy-acrylic adhesive layer composition which made the elongation rate larger than the adhesive layer composition 3A (1.5 times elongation rate of elongation rate of adhesive layer composition 3A). As shown in Table 3, cyclohexanone was used for the composition which consists of 40 mass parts of epoxy resins, 32 mass parts of phenol resins, 1.7 mass parts of silane coupling agents (1), 3.2 mass parts of silane coupling agents (2), and 25 mass parts of fillers. 65 mass parts was added, stirred and mixed, and it knead | mixed for 90 minutes using the bead mill. 450 parts by mass of acrylic rubber HTR-860P-3 (manufactured by Nagase Chemtex Co., Ltd. product name, weight average molecular weight 800,000) and glycidyl acrylate or glycidyl methacrylate 3% by weight and curing accelerator 0.5 A mass part was added, stirred and mixed, and vacuum degassing to obtain an adhesive layer composition 3D.

The adhesive layer compositions 3A to 3C were applied onto a release-treated polyethylene terephthalate (PET) film having a thickness of 25 μm, dried at 140 ° C. for 5 minutes to form a B stage coating film having a film thickness of 40 μm, An adhesive film was produced. Moreover, about adhesive bond layer composition 3D, it formed so that it might become a coating film of the B stage state whose film thickness is 10 micrometers, and produced the adhesive film.

The produced adhesive film 12 and the adhesive film were cut into the circular shape of diameter 370mm and 320mm, respectively, and the adhesive layer 12b of the adhesive film 12 and the adhesive bond layer 13 of the adhesive film were bonded together. Finally, the PET film of the adhesive film is peeled off from the adhesive layer 13, and the wafer processing tape 10 according to Examples 1 to 15 shown in Table 4 below and the wafer processing according to Comparative Examples 1 to 12 shown in Table 5 below. I got a tape.

In Table 4, the combination of the base film, the adhesive layer composition, and the adhesive bond layer composition which comprise the tape 10 for a wafer process concerning Examples 1-15 is shown. Moreover, the thickness of the base film 12a, the radiation curable adhesive layer 12b, and the adhesive bond layer 13 in each Example 1-15 is also shown. In addition, the tear strength C (N / mm) of the rectangular tear test piece 100 which consists of the adhesive film 12 shown to Fig.2 (a) in each Example 1-15, in each Example 1-15, Tear strength D (N / mm), strength ratio (D / C) of a right-angle tear test piece 110 having a cut portion 115 of approximately 1 mm in length shown in FIG. The incidence rate (%) of the double die in 15 to 15, the elongation rate (%) of the adhesive bond layer 13, and the precut workability evaluation in each Example 1-15 are also shown.

In Table 5, the combination of the base film, the adhesive layer composition, and the adhesive bond layer composition which comprise the tape for a wafer process concerning Comparative Examples 1-12 is shown. Moreover, the thickness of the base film 12a, the radiation curable adhesive layer 12b, and the adhesive bond layer 13 in each comparative example 1-12 is also shown. In addition, the tear strength C (N / mm) of the rectangular tear test piece 100 which consists of the adhesive film 12 shown to Fig.2 (a) in each comparative example 1-12, in each comparative example 1-12. Tear strength D (N / mm), strength ratio (D / C) of the rectangular tear test piece 110 with the cut portion 115 having a length of approximately 1 mm shown in FIG. The incidence rate (%) of the double die in 1-12, the elongation rate (%) of the adhesive bond layer 13, and the precut workability evaluation in each comparative example 1-12 are also shown.

&Lt; Example 1 >

As shown in Table 4, the tape for wafer processing according to Example 1 uses the base film 1B, the pressure-sensitive adhesive layer composition 2A, and the adhesive layer composition 3A, and the base film 12a and the radiation by the method described above. The curable pressure-sensitive adhesive layer 12b and the adhesive layer 13 were laminated and produced in this order so that the respective thicknesses were 80 µm, 10 µm, and 40 µm.

<Example 2>

As shown in Table 4 above, the tape for wafer processing according to Example 2 uses the base film 1C, the pressure-sensitive adhesive layer composition 2A, and the adhesive layer composition 3A, and the base film 12a and the radiation by the method described above. The curable pressure-sensitive adhesive layer 12b and the adhesive layer 13 were laminated and produced in this order so that the respective thicknesses were 80 µm, 10 µm, and 40 µm.

<Example 3>

As shown in Table 4, the tape for wafer processing according to Example 3 uses the base film 1D, the pressure-sensitive adhesive layer composition 2A, and the adhesive layer composition 3A, and the base film 12a and the radiation by the method described above. The curable pressure-sensitive adhesive layer 12b and the adhesive layer 13 were laminated and produced in this order so that the respective thicknesses were 80 µm, 10 µm, and 40 µm.

<Example 4>

As shown in Table 4, the tape for wafer processing according to Example 4 uses the base film 1B, the pressure-sensitive adhesive layer composition 2B, and the adhesive layer composition 3A, and the base film 12a and the radiation by the method described above. The curable pressure-sensitive adhesive layer 12b and the adhesive layer 13 were laminated and produced in this order so that the respective thicknesses were 80 µm, 10 µm, and 40 µm.

Example 5

As shown in Table 4, the tape for wafer processing according to Example 5 uses the base film 1E, the pressure-sensitive adhesive layer composition 2C, and the adhesive layer composition 3A, and the base film 12a and the radiation by the method described above. The curable pressure-sensitive adhesive layer 12b and the adhesive layer 13 were laminated and produced in this order so that the respective thicknesses were 100 μm, 10 μm, and 40 μm.

<Example 6>

As shown in Table 4, the tape for wafer processing according to Example 6 uses the base film 1F, the pressure-sensitive adhesive layer composition 2A, and the adhesive layer composition 3A, and the base film 12a and the radiation by the method described above. The curable pressure-sensitive adhesive layer 12b and the adhesive layer 13 were laminated and produced in this order so that the thicknesses were 150 µm, 10 µm, and 40 µm.

<Example 7>

As shown in Table 4, the tape for wafer processing according to Example 7 uses the base film 1B, the pressure-sensitive adhesive layer composition 2A, and the adhesive layer composition 3D, and the base film 12a and the radiation by the method described above. The curable pressure-sensitive adhesive layer 12b and the adhesive layer 13 were laminated and produced in this order such that their respective thicknesses were 80 μm, 10 μm, and 10 μm.

<Example 8>

The tape 10 for wafer processing concerning Example 8 used the base film 1B, the adhesive layer composition 2D, and the adhesive bond layer composition 3A as shown in the said Table 4, and the base film 12a and radiation by the method mentioned above. The curable pressure-sensitive adhesive layer 12b and the adhesive layer 13 were laminated and produced in this order so that the respective thicknesses were 80 µm, 10 µm, and 40 µm.

Example 9

As shown in Table 4, the tape for wafer processing according to Example 9 uses the base film 1B, the pressure-sensitive adhesive layer composition 2E, and the adhesive layer composition 3A, and the base film 12a and the radiation by the method described above. The curable pressure-sensitive adhesive layer 12b and the adhesive layer 13 were laminated and produced in this order so that the respective thicknesses were 80 µm, 10 µm, and 40 µm.

<Example 10>

As shown in Table 4, the tape for wafer processing according to Example 10 uses the base film 1E, the pressure-sensitive adhesive layer composition 2D, and the adhesive layer composition 3D, and the base film 12a and the radiation by the method described above. The curable pressure-sensitive adhesive layer 12b and the adhesive layer 13 were laminated and produced in this order so that the thicknesses were 100 μm, 10 μm, and 10 μm.

<Example 11>

The tape 10 for wafer processing concerning Example 11 used the base film 1B, the adhesive layer composition 2F, and the adhesive bond layer composition 3A as shown in the said Table 4, and the base film 12a and radiation by the method mentioned above. The curable pressure-sensitive adhesive layer 12b and the adhesive layer 13 were laminated and produced in this order so that the respective thicknesses were 80 µm, 10 µm, and 40 µm.

<Example 12>

As shown in Table 4, the tape for wafer processing according to Example 12 uses the base film 1B, the pressure-sensitive adhesive layer composition 2A, and the adhesive layer composition 3B, and the base film 12a and the radiation by the method described above. The curable pressure-sensitive adhesive layer 12b and the adhesive layer 13 were laminated and produced in this order so that the respective thicknesses were 80 µm, 10 µm, and 40 µm.

Example 13

As shown in Table 4, the tape for wafer processing according to Example 13 uses the base film 1C, the pressure-sensitive adhesive layer composition 2C, and the adhesive layer composition 3D, and the base film 12a and the radiation by the method described above. The curable pressure-sensitive adhesive layer 12b and the adhesive layer 13 were laminated and produced in this order such that their respective thicknesses were 80 μm, 10 μm, and 10 μm.

<Example 14>

As shown in Table 4, the tape for wafer processing according to Example 14 uses the base film 1B, the pressure-sensitive adhesive layer composition 2C, and the adhesive layer composition 3D, and the base film 12a and the radiation by the method described above. The curable pressure-sensitive adhesive layer 12b and the adhesive layer 13 were laminated and produced in this order such that their respective thicknesses were 80 μm, 10 μm, and 10 μm.

<Example 15>

As shown in Table 4 above, the tape for wafer processing according to Example 15 uses the base film 1C, the pressure-sensitive adhesive layer composition 2B, and the adhesive layer composition 3A, and the base film 12a and the radiation by the method described above. The curable pressure-sensitive adhesive layer 12b and the adhesive layer 13 were laminated and produced in this order so that the respective thicknesses were 80 µm, 10 µm, and 40 µm.

Comparative Example 1

As shown in Table 5 above, the tape for wafer processing according to Comparative Example 1 uses the base film 1A, the pressure-sensitive adhesive layer composition 2A, and the adhesive layer composition 3A, and the base film 12a and the radiation-curable pressure-sensitive adhesive layer by the method described above. (12b) and the adhesive bond layer 13 were laminated | stacked and produced in this order so that each thickness might be 70 micrometers, 10 micrometers, and 40 micrometers.

Comparative Example 2

The tape for wafer processing which concerns on the comparative example 2 is a base film 12a and a radiation-curable adhesive layer by the method mentioned above using the base film 1E, the adhesive layer composition 2A, and the adhesive bond layer composition 3A, as shown in said Table 5 above. (12b) and the adhesive bond layer 13 were laminated | stacked and produced in this order so that it might become 100 micrometers, 10 micrometers, and 40 micrometers, respectively.

Comparative Example 3

As shown in Table 5 above, the tape for wafer processing according to Comparative Example 3 uses the base film 1A, the pressure-sensitive adhesive layer composition 2A, and the adhesive layer composition 3B, and the base film 12a and the radiation-curable pressure-sensitive adhesive layer by the method described above. (12b) and the adhesive bond layer 13 were laminated | stacked and produced in this order so that each thickness might be 70 micrometers, 10 micrometers, and 40 micrometers.

<Comparative Example 4>

The tape for wafer processing which concerns on the comparative example 4 uses the base film 1A, the adhesive layer composition 2A, and the adhesive bond layer composition 3C as shown in the said Table 5, and the base film 12a and the radiation-curable adhesive layer by the method mentioned above. (12b) and the adhesive bond layer 13 were laminated | stacked and produced in this order so that each thickness might be 70 micrometers, 10 micrometers, and 40 micrometers.

Comparative Example 5

The tape for wafer processing which concerns on the comparative example 5 uses the base film 1A, the adhesive layer composition 2A, and the adhesive bond layer composition 3D as shown in the said Table 5, The base film 12a and the radiation-curable adhesive layer by the method mentioned above. (12b) and the adhesive bond layer 13 were laminated | stacked and produced in this order so that each thickness might be 70 micrometers, 10 micrometers, and 10 micrometers.

Comparative Example 6

The tape for wafer processing which concerns on the comparative example 6 used the base film 1A, the adhesive layer composition 2C, and the adhesive bond layer composition 3A as shown in the said Table 5, and the base film 12a and the radiation-curable adhesive layer by the method mentioned above. (12b) and the adhesive bond layer 13 were laminated | stacked and produced in this order so that each thickness might be 70 micrometers, 10 micrometers, and 40 micrometers.

&Lt; Comparative Example 7 &

The tape for wafer processing which concerns on the comparative example 7 uses the base film 1E, the adhesive layer composition 2A, and the adhesive bond layer composition 3B as shown in the said Table 5, and the base film 12a and the radiation-curable adhesive layer by the method mentioned above. (12b) and the adhesive bond layer 13 were laminated | stacked and produced in this order so that it might become 100 micrometers, 10 micrometers, and 40 micrometers, respectively.

&Lt; Comparative Example 8 >

The tape for wafer processing which concerns on the comparative example 8 used the base film 1E, the adhesive layer composition 2E, and the adhesive bond layer composition 3A as shown in the said Table 5, The base film 12a and the radiation-curable adhesive layer by the method mentioned above. (12b) and the adhesive bond layer 13 were laminated | stacked and produced in this order so that it might become 100 micrometers, 10 micrometers, and 40 micrometers, respectively.

&Lt; Comparative Example 9 &

The tape for wafer processing which concerns on the comparative example 9 used the base film 1E, the adhesive layer composition 2B, and the adhesive bond layer composition 3A as shown in the said Table 5, and the base film 12a and the radiation-curable adhesive layer by the method mentioned above. (12b) and the adhesive bond layer 13 were laminated | stacked and produced in this order so that it might become 100 micrometers, 10 micrometers, and 40 micrometers, respectively.

&Lt; Comparative Example 10 &

The tape for wafer processing which concerns on the comparative example 10 used the base film 1E, the adhesive layer composition 2F, and the adhesive bond layer composition 3A as shown in the said Table 5, and the base film 12a and the radiation-curable adhesive layer by the method mentioned above. (12b) and the adhesive bond layer 13 were laminated | stacked and produced in this order so that it might become 100 micrometers, 10 micrometers, and 40 micrometers, respectively.

&Lt; Comparative Example 11 &

The tape for wafer processing which concerns on the comparative example 11 used the base film 1G, the adhesive layer composition 2A, and the adhesive bond layer composition 3A as shown in the said Table 5, The base film 12a and the radiation-curable adhesive layer by the method mentioned above. (12b) and the adhesive bond layer 13 were laminated | stacked and produced in this order so that each thickness might be 70 micrometers, 10 micrometers, and 40 micrometers.

&Lt; Comparative Example 12 >

The tape for wafer processing which concerns on the comparative example 12 uses the base film 1G, the adhesive layer composition 2C, and the adhesive bond layer composition 3A as shown in the said Table 5, and the base film 12a and the radiation-curable adhesive layer by the method mentioned above. (12b) and the adhesive bond layer 13 were laminated | stacked and produced in this order so that each thickness might be 70 micrometers, 10 micrometers, and 40 micrometers.

<Measurement of tear strength>

The measurement of tear strength C and tear strength D in each wafer processing tape 10 concerning Examples 1-15 and each wafer processing tape concerning each comparative example 1-12 was based on JISK7128-3, and Measurement speed 500 (mm / min) using the rectangular tear test piece 100 which consists of the film 12 (refer FIG. 2 (a)), and the rectangular tear test piece 110 (refer FIG. 2 (b)). It was measured under the conditions of).

<Measurement of incidence of double die>

The measurement of the incidence rate (%) of the double die is based on the double die in the pick-up step in the case where the tape 10 for wafer processing according to Examples 1 to 15 and the tape for wafer processing according to Comparative Examples 1 to 12 were used. The number of outbreaks was measured by visual observation, and the ratio was computed.

<Measurement of Elongation of Adhesive Layer>

The measurement of the elongation rate (%) of the adhesive bond layer 13 consists of JISK7113 type 2 test piece 120 which consists only of the adhesive bond layer 13 of the adhesive film of each tape 10 for wafer processing concerning Examples 1-15 (FIG. 3) and the 2nd type test piece 120 of JISK7113 which consists only of the adhesive bond layer 13 of the adhesive film of the tape for each wafer process concerning Comparative Examples 1-12, and the 2nd type test piece which is the adhesive layer 13 ( 120) was stretched at a speed of 500 (mm / min) in one direction of the longitudinal direction (left and right direction in Fig. 3) to measure the elongation at break.

<Evaluation of precut workability>

Evaluation of precut workability is a peeling liner (release film) with respect to the adhesive film used for each wafer processing tape 10 concerning Examples 1-15, and the adhesive film used for each wafer processing tape concerning Comparative Examples 1-12. ) Into the adhesive film consisting of the 11 and the adhesive layer 13, a cut of a circle having a diameter of 320 mm is inserted at intervals of 58.5 mm for a 12-inch wafer, and the adhesive layer 13 of the outer side of the cut is 100 m at a cutting speed of 10 m / min. ) Was peeled off from the release liner (release film) 11 to be wound up, and the case where no breakage occurred was evaluated as "○", and the case where breakage occurred was evaluated as "x".

Example 1 consists of the tearing strength (henceforth tearing strength C) of the rectangular tear test piece 100 which consists of the adhesive film 12, and the adhesive film 12 which inserted the cut part 115 of about 1 mm in length. Since the strength ratio (D / C) of the tear strength (hereinafter, referred to as tear strength D) of the rectangular tear test piece 110 is 0.38 within the range of 0.8 or less which defines the strength ratio (D / C), the double The incidence rate of the die became 0%. That is, no double die occurred. Moreover, since it is 360% in the said 150% or more range which prescribes the elongation rate of the adhesive bond layer 13, precut workability was also favorable and a break did not generate | occur | produce once.

In Example 2, since the intensity ratio (D / C) of the tear strength C and the tear strength D was 0.67 within the range of 0.8 or less which defines the strength ratio (D / C), the incidence of the double die was 0%. . Moreover, since it is 360% in the said 150% or more range which prescribes the elongation rate of the adhesive bond layer 13, precut workability was also favorable and a break did not generate | occur | produce once.

In Example 3, since the intensity ratio (D / C) of the tear strength C and the tear strength D was 0.36 within the range of 0.8 or less which defines the strength ratio (D / C), the incidence rate of the double die was 0%. . That is, no double die occurred. Moreover, since it is 360% in the said 150% or more range which prescribes the elongation rate of the adhesive bond layer 13, precut workability was also favorable and a break did not generate | occur | produce once.

In Example 4, since the intensity ratio (D / C) of the tear strength C and the tear strength D was 0.49 within the range of 0.8 or less which defines the strength ratio (D / C), the incidence of the double die was 0%. . That is, no double die occurred. Moreover, since it is 360% in the said 150% or more range which prescribes the elongation rate of the adhesive bond layer 13, precut workability was also favorable and a break did not generate | occur | produce once.

In Example 5, since the intensity ratio (D / C) of the tear strength C and the tear strength D was 0.75 within the range of 0.8 or less which defines the strength ratio (D / C), the incidence rate of the double die was 0%. . That is, no double die occurred. Moreover, since it is 360% in the said 150% or more range which prescribes the elongation rate of the adhesive bond layer 13, precut workability was also favorable and a break did not generate | occur | produce once.

In Example 6, since the intensity ratio (D / C) of the tear strength C and the tear strength D was 0.45 within the range of 0.8 or less which defines the strength ratio (D / C), the occurrence rate of the double die was 0%. . That is, no double die occurred. Moreover, since it is 360% in the said 150% or more range which prescribes the elongation rate of the adhesive bond layer 13, precut workability was also favorable and a break did not generate | occur | produce once.

In Example 7, since the intensity ratio (D / C) of the tear strength C and the tear strength D was 0.38 within the range below 0.8 which defines the strength ratio (D / C), the incidence of the double die was 0%. . That is, no double die occurred. Moreover, since it was 540% in the said 150% or more range which prescribes the elongation rate of the adhesive bond layer 13, precut workability was also favorable and a break did not generate | occur | produce once.

In Example 8, since the intensity ratio (D / C) of the tear strength C and the tear strength D was 0.32 within the range of 0.8 or less which defines the strength ratio (D / C), the incidence rate of the double die was 0%. . That is, no double die occurred. Moreover, since it is 360% in the said 150% or more range which prescribes the elongation rate of the adhesive bond layer 13, precut workability was also favorable and a break did not generate | occur | produce once.

In Example 9, since the intensity ratio (D / C) of the tear strength C and the tear strength D was 0.47 within the range of 0.8 or less which defines the strength ratio (D / C), the occurrence rate of the double die was 0%. . That is, no double die occurred. Moreover, since it is 360% in the said 150% or more range which prescribes the elongation rate of the adhesive bond layer 13, precut workability was also favorable and a break did not generate | occur | produce once.

In Example 10, since the intensity ratio (D / C) of the tear strength C and the tear strength D was 0.76 within the range of 0.8 or less which defines the strength ratio (D / C), the occurrence rate of the double die was 0%. . That is, no double die occurred. Moreover, since it was 540% in the said 150% or more range which prescribes the elongation rate of the adhesive bond layer 13, precut workability was also favorable and a break did not generate | occur | produce once.

In Example 11, since the intensity ratio (D / C) of the tear strength C and the tear strength D was 0.50 within the range of 0.8 or less which defines the strength ratio (D / C), the occurrence rate of the double die was 0%. . That is, no double die occurred. Moreover, since it is 360% in the said 150% or more range which prescribes the elongation rate of the adhesive bond layer 13, precut workability was also favorable and a break did not generate | occur | produce once.

In Example 12, since the intensity ratio (D / C) of the tear strength C and the tear strength D was 0.38 within the range of 0.8 or less which defines the strength ratio (D / C), the occurrence rate of the double die was 0%. . That is, no double die occurred. Moreover, since it is 180% in the said 150% or more range which prescribes the elongation rate of the adhesive bond layer 13, precut workability was also favorable and a break did not generate | occur | produce once.

In Example 13, since the intensity ratio (D / C) of the tear strength C and the tear strength D was 0.60 within the range of 0.8 or less which defines the strength ratio (D / C), the occurrence rate of the double die was 0%. . That is, no double die occurred. Moreover, since it was 540% in the said 150% or more range which prescribes the elongation rate of the adhesive bond layer 13, precut workability was also favorable and a break did not generate | occur | produce once.

In Example 14, since the intensity ratio (D / C) of the tear strength C and the tear strength D was 0.32 within the range of 0.8 or less which defines the strength ratio (D / C), the occurrence rate of the double die was 0%. . That is, no double die occurred. Moreover, since it was 540% in the said 150% or more range which prescribes the elongation rate of the adhesive bond layer 13, precut workability was also favorable and a break did not generate | occur | produce once.

In Example 15, since the intensity ratio (D / C) of the tear strength C and the tear strength D was 0.75 within the range of 0.8 or less which defines the strength ratio (D / C), the incidence of the double die was 0%. . That is, no double die occurred. Moreover, since it is 360% in the said 150% or more range which prescribes the elongation rate of the adhesive bond layer 13, precut workability was also favorable and a break did not generate | occur | produce once.

In Comparative Example 1, since the intensity ratio (D / C) between the tear strength C and the tear strength D was 1.00 outside the above 0.8 or less range defining the strength ratio (D / C), the incidence of the double die was 100%. . That is, a double die occurred for all the semiconductor chips. Moreover, since it is 360% in the said 150% or more range which prescribes the elongation rate of the adhesive bond layer 13, precut workability was favorable and a break did not generate | occur | produce once.

In Comparative Example 2, since the intensity ratio (D / C) of the tear strength C and the tear strength D was 0.82 outside the above 0.8 or less range defining the strength ratio (D / C), the incidence of the double die was 20%. . That is, a double die occurred. Moreover, since it is 360% in the said 150% or more range which prescribes the elongation rate of the adhesive bond layer 13, precut workability was favorable and a break did not generate | occur | produce once.

In Comparative Example 3, since the intensity ratio (D / C) between the tear strength C and the tear strength D was 1.00 outside the above 0.8 or less range defining the strength ratio (D / C), the incidence of the double die was 100%. . That is, a double die occurred for all the semiconductor chips. Moreover, since it is 180% in the said 150% or more range which prescribes the elongation rate of the adhesive bond layer 13, precut workability was favorable and a break did not generate | occur | produce once.

In Comparative Example 4, although the strength ratio (D / C) of the tear strength C and the tear strength D was 1.00 outside the range of 0.8 or less which defines the strength ratio (D / C), the elongation of the adhesive layer 13 was 90%. For this reason, the incidence rate of the double die became 0%. However, since it is 90% outside the said 150% or more range which prescribes the elongation rate of the adhesive bond layer 13, precut workability was inferior and breakage generate | occur | produced.

In Comparative Example 5, since the intensity ratio (D / C) of the tear strength C and the tear strength D was 1.00 outside the above 0.8 range that defines the strength ratio (D / C), the incidence rate of the double die became 20%. . That is, a double die occurred. Moreover, since it was 540% in the said 150% or more range which prescribes the elongation rate of the adhesive bond layer 13, precut workability was favorable and a break did not generate | occur | produce once.

In Comparative Example 6, since the intensity ratio (D / C) between the tear strength C and the tear strength D was 0.95 outside the range of 0.8 or less that defines the strength ratio (D / C), the incidence of the double die was 100%. . That is, a double die occurred for all the semiconductor chips. Moreover, since it is 360% in the said 150% or more range which prescribes the elongation rate of the adhesive bond layer 13, precut workability was favorable and a break did not generate | occur | produce once.

In Comparative Example 7, the incidence rate of the double die was 10% because the intensity ratio (D / C) between the tear strength C and the tear strength D was 0.82 outside the above 0.8 or less range that defines the strength ratio (D / C). . That is, a double die occurred. Moreover, since it is 180% in the said 150% or more range which prescribes the elongation rate of the adhesive bond layer 13, precut workability was favorable and a break did not generate | occur | produce once.

In Comparative Example 8, since the intensity ratio (D / C) of the tear strength C and the tear strength D was 0.88 outside the above 0.8 or less range defining the strength ratio (D / C), the incidence of the double die was 50%. . That is, a double die occurred. Moreover, since it is 360% in the said 150% or more range which prescribes the elongation rate of the adhesive bond layer 13, precut workability was favorable and a break did not generate | occur | produce once.

In Comparative Example 9, since the intensity ratio (D / C) between the tear strength C and the tear strength D was 0.90 outside the above 0.8 or less range that defines the strength ratio (D / C), the incidence of the double die was 60%. . That is, a double die occurred. Moreover, since it is 360% in the said 150% or more range which prescribes the elongation rate of the adhesive bond layer 13, precut workability was favorable and a break did not generate | occur | produce once.

In Comparative Example 10, since the intensity ratio (D / C) between the tear strength C and the tear strength D was 0.93 outside the range of 0.8 or less that defines the strength ratio (D / C), the incidence of the double die was 80%. . That is, a double die occurred. Moreover, since it is 360% in the said 150% or more range which prescribes the elongation rate of the adhesive bond layer 13, precut workability was favorable and a break did not generate | occur | produce once.

In Comparative Example 11, since the intensity ratio (D / C) between the tear strength C and the tear strength D was 0.99 outside the above 0.8 or less range that defines the strength ratio (D / C), the incidence of the double die was 100%. . That is, a double die occurred for all the semiconductor chips. Moreover, since it is 360% in the said 150% or more range which prescribes the elongation rate of the adhesive bond layer 13, precut workability was favorable and a break did not generate | occur | produce once.

In Comparative Example 12, since the intensity ratio (D / C) of the tear strength C and the tear strength D was 0.98 outside the range of 0.8 or less that defines the strength ratio (D / C), the incidence of the double die was 100%. . That is, a double die occurred for all the semiconductor chips. Moreover, since it is 360% in the said 150% or more range which prescribes the elongation rate of the adhesive bond layer 13, precut workability was favorable and a break did not generate | occur | produce once.

In the tape 10 for wafer processing which concerns on this embodiment of Examples 1-15, in the measurement of the tearing strength of the rectangular tear test piece using the adhesive film 12 by the rectangular tear method of JISK7128-3, When the tear strength of the rectangular tear test piece 100 is C and the tear strength of the rectangular tear test piece 110 having the cut portion 115 of about 1 mm in length is D, the strength ratio (D / C) is It is satisfying that the elongation rate of the 2nd type test piece 120 which is the adhesive bond layer 13 in the thing of 0.8 or less and the elongation rate by the 2nd type test piece of JISK7113 is 150% or more, and this embodiment of Examples 1-15. When the tape 10 for wafer processing which concerns on the said process was used, it turned out that it is excellent in precut workability and can prevent generation | occurrence | production of the double die in a pick-up process.

As mentioned above, by using the wafer processing tape 10 which concerns on this embodiment, it is excellent in the productivity of a wafer processing tape, ie, excellent in precut workability, and excellent in the expandability of the tape for wafer processing, and is double in a pick-up process. The occurrence of a die and the occurrence of a problem that the semiconductor chip cannot be picked up can be suppressed.

1: semiconductor wafer
2: semiconductor chip
10: Tape for Wafer Processing
12a: base film
12b: pressure-sensitive adhesive layer
12: adhesive film
13: adhesive layer
100, 110: rectangular tear test piece
115: cutting part
120: No. 2 type test piece

Claims (2)

A base film, an adhesive layer, and an adhesive bond layer are tapes for wafer processing formed in this order,
In the measurement of the tear strength by the rectangular tear method of JIS K 7128-3 which used the laminated body formed from the said base film and the said adhesive layer as a rectangular tear test piece,
Let tear strength of the said rectangular tear test piece be C,
When the tearing strength of the said rectangular tear test piece which put the cutting part of length 1mm from the front end of the said rectangular part on the center line which passes through the front end of the rectangular tear test piece is set to D,
The strength ratio (D / C) is 0.8 or less, The tape for a wafer process characterized by the above-mentioned. The tape for wafer processing of Claim 1 whose elongation rate of the said adhesive bond layer is 150% or more in the measurement of the elongation rate by the No. 2 test piece of JISK7113, when using the said adhesive bond layer as the said No. 2 test piece.

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