CN102220091A - Adhesive tape for wafer processing - Google Patents

Adhesive tape for wafer processing Download PDF

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Publication number
CN102220091A
CN102220091A CN2011100788980A CN201110078898A CN102220091A CN 102220091 A CN102220091 A CN 102220091A CN 2011100788980 A CN2011100788980 A CN 2011100788980A CN 201110078898 A CN201110078898 A CN 201110078898A CN 102220091 A CN102220091 A CN 102220091A
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CN
China
Prior art keywords
film
adhesive layer
epoxy
resins
adhesive tape
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Pending
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CN2011100788980A
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Chinese (zh)
Inventor
铃木俊宏
石渡伸一
盛岛泰正
金永锡
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Furukawa Electric Co Ltd
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Furukawa Electric Co Ltd
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Priority claimed from JP2011034152A external-priority patent/JP2011228642A/en
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Publication of CN102220091A publication Critical patent/CN102220091A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Adhesive Tapes (AREA)
  • Dicing (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

The invention aims to provide adhesive tape for wafer processing, which has high adhesive performances and can prevent gap or warpage generation when adhesive tape for wafer processing is attached during a semiconductor device manufacturing process. The adhesive tape for wafer processing, at least comprises acrylic acid system copolymerization resin, liquid epoxy resin in room temperature, curing agents of epoxy resin and a filling material adhesive layer. The adhesive tape is characterized in that the average particle size of the filling material is below 0.08 X (mu)m relative to the thickness X (mu)m of the adhesive layer.

Description

The wafer process adhesive tape
Technical field
The present invention relates to a kind of wafer process adhesive tape.Particularly relate to a kind of wafer process adhesive tape with tacky film and cascade type dicing die welding film, described cascade type dicing die welding film has dicing tape and these two functions of tube core welding film.
Background technology
In the manufacturing process of semiconductor device, implement with semiconductor wafer cutting and separating (dicing) become the unitary operation of semi-conductor chip, pick up the operation of isolating semi-conductor chip, further that the semi-conductor chip that picks up and lead frame or base plate for packaging etc. are bonding tube core welds (installation) operation.
In recent years, employed wafer process adhesive tape in the manufacturing process as above-mentioned semiconductor device, the wafer process that has proposed for example to have adhesive layer with adhesive tape (tacky film) or wafer process with the structure that on base material film, is laminated with binder layer and adhesive layer with adhesive tape (dicing die welding film: DDF), be practical.So that the time have flowability in welding be purpose or be purpose to suppress cure shrinkage, in tacky film, add filler.Under the situation of dicing die welding film, the machinability when cutting with further raising etc. is a purpose, also adds filler (for example with reference to patent documentation 1) in adhesive layer.
[prior art document]
[patent documentation]
[patent documentation 1] TOHKEMY 2005-303275 communique
Summary of the invention
But in recent years, along with the miniaturization of semiconductor device, the progress of filming, the relation according to the size of the thickness of tacky film or adhesive layer and filler might produce space or bonding bad in semiconductor device.When not adding Resins, epoxy and solidifying agent, it is big that cure shrinkage becomes, and produces warpage on semi-conductor chip and substrate.
Therefore, the present invention is the invention of finishing in order to solve aforesaid problem points, its purpose is, a kind of high wafer process adhesive tape of glueability that can prevent to produce when bonded wafer processing is with adhesive tape in the manufacturing process of semiconductor device space or warpage is provided.
In order to solve above-mentioned problem, the wafer process of first mode of the present invention is characterised in that with adhesive tape, have and contain the acrylic acid series copolymer resins at least, at room temperature be the adhesive layer of liquid Resins, epoxy, described curing agent for epoxy resin and filler, wherein, with respect to the thickness X μ m of described adhesive layer, the median size of described filler is below 0.08X μ m.
The wafer process of second mode of the present invention is characterised in that with adhesive tape, in the wafer process of first mode of the invention described above with in the adhesive tape, with respect to described acrylic acid series copolymer resins 100 mass parts, contain following described Resins, epoxy and the described solidifying agent of above 145 mass parts of 30 mass parts.
The wafer process of Third Way of the present invention is characterised in that with adhesive tape, in the wafer process of first or second mode of the invention described above with in the adhesive tape, the stacked adhesive layer of stating to some extent on the binder layer that is arranged on the base material film.
The invention effect
The wafer process adhesive tape of the application of the invention, can prevent space when bonded wafer processing is with adhesive tape in the manufacturing process of semiconductor device or the generation of warpage, simultaneously, by preventing the generation of space or warpage, can seek the raising of the yield rate of semiconductor device.In addition, the high semiconductor device of higher bonding force and reliability that can be maintained.
Description of drawings
Fig. 1 schematically shows the sectional view of the wafer process of embodiments of the present invention with the formation of adhesive tape.
Fig. 2 is shown schematically in the explanatory view of wafer process with the state that is fitted with semiconductor wafer and wafer ring on the adhesive tape.
Fig. 3 is the explanatory view that is used for schematically illustrating cutting action.
Fig. 4 is the explanatory view that is used for schematically illustrating the expansion operation.
Fig. 5 is used for schematically illustrating the explanatory view that picks up operation.
[explanation of symbol]
1: semiconductor wafer
2: semi-conductor chip
10: the wafer process adhesive tape
12a: base material film
12b: binder layer
12: binder film
13: adhesive layer
20: toroidal frame
21: cutting plate
22: absorptive table
30: ejector member
31: pin
32: suction jig
Embodiment
Below, based on accompanying drawing embodiments of the present invention are elaborated.
As shown in Figure 1, the wafer process of present embodiment has with adhesive tape 10: the binder film 12 that is made of membranaceous base material film 12a and formed thereon binder layer 12b and be laminated in adhesive layer 13 on this binder film 12.Like this, base material film 12a, binder layer 12b and adhesive layer 13 have been formed in wafer process successively in adhesive tape 10.
Need to prove that binder layer 12b both can be made of the layer of adhesive layer, also can constitute by the layer that is laminated with two-layer above binder layer.In addition, in Fig. 1 illustration in order to protect adhesive layer 13, the situation of peeling off overlay 11 is set in wafer process on adhesive tape 10.
Binder film 12 and adhesive layer 13 can be according to using operation or device cutting (precut) established practice setting shape in advance.Wafer process of the present invention comprises that with adhesive tape 10 state that cuts into many semiconductor wafers and the strip film that will form a plurality of semiconductor wafers are wound into the state of roller shape.
Below, the wafer process of present embodiment each integrant with adhesive tape 10 is elaborated.
(adhesive layer)
After adhesive layer 13 is cut (with reference to Fig. 3 described later) again fitting on semiconductor wafer 1 grade, when picking up monolithic semiconductor chip 2 (with reference to Fig. 5 described later), be attached to the back side of semi-conductor chip 2, use as semi-conductor chip 2 being fixed in the isochronous tackiness agent of substrate or lead frame.
Adhesive layer 13 contains the acrylic acid series copolymer resins at least, at room temperature be liquid Resins, epoxy, curing agent for epoxy resin and filler, in addition, can mix the known polyimide resin that can in tackiness agent, use, polyamide resin, polyetherimide resin, polyamide-imide resin, vibrin, polyesterimide resin, phenoxy resin, polysulfone resin, polyethersulfone resin, polyphenylene sulfide, polyether ketone resin, chlorinated polypropylene, urethane resin, at room temperature be solid-state Resins, epoxy, polyacrylamide resin, melmac etc.
Acrylic copolymer utilizes radical polymerization etc. to carry out solution polymerization by the monomer solution that will comprise (methyl) acrylate monomer, vinyl cyanide and other co-polymerized monomer with epoxy group(ing) and obtains.In addition, when polymerization,, use organo-peroxides such as benzoyl peroxide, dicumyl peroxide, dibutyl superoxide, tert butyl peroxy benzoate, azo based compounds such as Diisopropyl azodicarboxylate, azo two valeronitriles as polymerization starter.As (methyl) acrylate monomer, use glycidyl methacrylate, glycidyl acrylate etc. to have the compound of the two keys of copolymerization with epoxy group(ing).The weight-average molecular weight of acrylic copolymer is preferably more than 50,000, in 200,000～1,000,000 scope.Weight-average molecular weight is crossed when hanging down, and film forms insufficient, and when too high, with the intermiscibility variation of other composition, the result is the formation that hinders film.
Resins, epoxy is as long as present adhesive action and at room temperature for liquid, just be not particularly limited after curing, can use that the above and preferred weight-average molecular weight of two functional groups is lower than 5000, the Resins, epoxy more preferably less than 3000.Further preferably can use weight-average molecular weight to be more than 500, be preferably the Resins, epoxy more than 800 especially.
For example can enumerate: bisphenol A type epoxy resin, bisphenol f type epoxy resin, bisphenol-s epoxy resin, alicyclic epoxy resin, aliphatics chain Resins, epoxy, novalac type Resins, epoxy, the cresols phenolic resin varnish type epoxy resin, bisphenol-A phenolic varnish type Resins, epoxy, the 2-glycidyl etherificate thing of bis-phenol, the 2-glycidyl etherificate thing of naphthalene glycol, the 2-glycidyl etherificate thing of phenols, the 2-glycidyl etherificate thing of alcohols and their alkyl replace body, halogenide, difunctional epoxy resin such as hydride, phenolic resin varnish type epoxy resin.In addition, also can use polyfunctional epoxy resin or contain general known Resins, epoxy such as heterocyclic ring epoxy resins.These Resins, epoxy can use or make up two or more uses separately.And, can be at the composition beyond the scope of not damaging characteristic contains Resins, epoxy as impurity.
As curing agent for epoxy resin, can use for example phenol resin.As phenol resin, be not particularly limited condenses that uses phenols such as alkylphenol, polyphenol, naphthols, biphenylene and aldehydes etc.Phenol hydroxyl contained in these phenol resins can easily carry out addition reaction with the epoxy group(ing) of Resins, epoxy by heating, and forms the high cured article of shock-resistance.
In phenol resin, preferably use novolac resin, ortho-cresol novolac resin, p-cresol novolac resin, tert butyl phenolic resin, Dicyclopentadiene (DCPD) cresol resin, poly-to phenol ethylene resin, bisphenol A-type novolac resin, phenol-biphenylene resin or their modifier etc.
As other solidifying agent, also can use hot active form potentiality epoxy curing agent.This solidifying agent activates the solidifying agent of the type of reacting with Resins, epoxy for being at room temperature not react with Resins, epoxy by certain heating more than temperature.As activation method, following method is arranged: the chemical reaction that causes by heating generates the method for spike (negatively charged ion, positively charged ion); Near room temperature, stably be scattered in the Resins, epoxy and also at high temperature mix, dissolve, the method for initiation curing reaction with Resins, epoxy; Utilize the solidifying agent stripping at high temperature of molecular sieve enclosing type and cause the method for curing reaction; Utilize the method for microcapsule etc.
As hot active form potentiality epoxy curing agent, can enumerate: high-melting-point active dydrogen compounds such as various salt or diprotic acid dihydrazide compound, Dyhard RU 100, amine adduct solidifying agent, imidazolium compounds etc.
In addition, adhesive layer 13 contains following above-mentioned Resins, epoxy and the curing agent for epoxy resin of above 145 mass parts of 30 mass parts preferably with respect to aforesaid propylene acid based copolymerized resin 100 mass parts.
In addition, also can use curing catalyst etc. as auxiliary agent.As being used for curing catalyst of the present invention, be not particularly limited, can use for example tertiary amine, imidazoles, quaternary ammonium salt etc.As the preferred imidazoles of using among the present invention, for example can enumerate: glyoxal ethyline, 2-ethyl-4-methylimidazole, 1-cyano ethyl-2-phenylimidazole, 1-cyano ethyl-2-phenylimidazole trimellitate etc., these materials also can be used alone or in combination with two or more kinds.Imidazoles is for example commercially available with the such trade(brand)name of 2E4MZ, 2PZ, 2PZ-CN, 2PZ-CNS by Shikoku Chem.
As filler, can enumerate: silicon-dioxide or mineral fillers such as aluminum oxide, glass sphere such as crystalline silica, synthetic silica.As mineral filler, be not particularly limited, for example can enumerate: aluminium hydroxide, magnesium hydroxide, lime carbonate, magnesiumcarbonate, Calucium Silicate powder, Magnesium Silicate q-agent, calcium oxide, magnesium oxide, aluminum oxide, aluminium nitride, aluminium borate whisker, boron nitride, crystalline silicon-dioxide, amorphous silica etc.These fillers also can be used alone or in combination with two or more kinds.In order to improve heat conductivity, preferred aluminum oxide, aluminium nitride, boron nitride, crystallinity silicon-dioxide, amorphism silicon-dioxide etc.Equilibrated viewpoint in characteristic is considered, preferred silicon-dioxide.
With respect to the thickness X μ m of adhesive layer 13, the median size of filler is 0.08X μ m following (below 0.08 times of X μ m).Like this, the median size of filler is fully little with respect to the thickness of adhesive layer 13, thereby can prevent to be involved in air when adhesive layer 13 is pasted on semiconductor wafer 1 and produce the space.At this, the median size of filler is with respect to the thickness X μ m of adhesive layer 13, during for 0.08X μ m, integrally become path, mobile variation when being pasted on semiconductor wafer 1, but in the present invention, using at room temperature be that the Resins, epoxy of liquid state is as the thermofixation composition, therefore, can easily be pasted on semiconductor wafer 1.
And, for the interface that makes storeroom of the same race not in conjunction with good, also can cooperate coupling agent.As coupling agent, the preferred silane coupling agent.As silane coupling agent, can enumerate: γ-glycidoxypropyltrime,hoxysilane, γ-Qiu Jibingjisanjiayangjiguiwan, γ-An Jibingjisanyiyangjiguiwan, γ-urea groups propyl-triethoxysilicane, N-beta-aminoethyl-gamma-amino propyl trimethoxy silicane etc.With regard to the use level of coupling agent,,, preferably add 0.1～10 mass parts with respect to total 100 mass parts of each composition that forms disperse phase and external phase from adding effect or thermotolerance and the consideration of cost aspect that produces.
In addition, the solvent of varnishization preferably uses the lower methyl ethyl ketone of boiling point, acetone, mibk, cellosolvo, toluene, ethylene glycol butyl ether, methyl alcohol, ethanol, 2-methyl cellosolve etc.In addition, can add high boiling solvent with purposes such as filming property of raising.As high boiling solvent, can enumerate: N,N-DIMETHYLACETAMIDE, dimethyl formamide, methyl-2-pyrrolidone, pimelinketone etc.
About preferred 5～20 μ m of the thickness of adhesive layer 13.
(binder film)
As binder film 12, be not particularly limited, as long as when cutting semiconductor chip 1 (with reference to Fig. 3 described later), has the sufficient adhesive that semiconductor wafer 1 is peeled off, and when picking up monolithic semiconductor chip 2 after cutting (with reference to Fig. 5 described later), the low bounding force that demonstration can easily be peeled off from adhesive layer 13 gets final product.For example, preferably use the binder film that on base material film 12a, is provided with binder layer 12b.
As the base material film 12a of binder film 12, as long as for existing known base material film, just can use, but at the material of use radiation-curable during as binder layer 12b described later, preferably use has the radioparent base material film of radioactive rays with being not particularly limited.
For example, as its material, can enumerate: homopolymer or the multipolymer or their mixture of alpha-olefins such as polyethylene, polypropylene, ethylene-propylene copolymer, polybutene-1, poly--4-methylpentene-1, ethylene-vinyl acetate copolymer, ethylene-ethyl acrylate copolymer, ethylene-methyl acrylate copolymer, ethylene-acrylic acid copolymer, ionomer, urethane, styrene-ethylene-butylene or thermoplastic elastomer and their mixtures such as amylene based copolymer, polymeric amide-polyol copolymer.In addition, base material film 12a can be for being selected from the mixtures of material more than 2 kinds in above-mentioned these groups, and these base material films can be the base material film of single or multiple lift.
The thickness of base material film 12a is not particularly limited, and can suitably set, and is preferably 50～200 μ m.
As employed resin among the binder layer 12b of binder film 12, be not particularly limited, as long as have the retentivity that does not make the degree that adhesive layer 13 and semiconductor wafer 1 peel off in when expansion (with reference to Fig. 4 described later), the characteristic that (with reference to Fig. 5 described later) has easily and adhesive layer 13 is peeled off when picking up gets final product.In order to make the raising of picking up property, the binder layer of the preferred radiation-curable of binder layer 12b.
Preference is as employed known chlorinated polypropylene in tackiness agent, acrylic resin, vibrin, urethane resin, Resins, epoxy, the addition reaction-type organopolysiloxane is a resin, the Si acrylate resin, ethylene-vinyl acetate copolymer, ethylene-ethyl acrylate copolymer, ethylene-methyl acrylate copolymer, ethylene-acrylic acid copolymer, various elastomericss such as polyisoprene or styrene-butadiene-copolymer or its hydride etc. or in its mixture, suitably cooperate the radioactive rays polymerizable compound and prepare tackiness agent.In addition, can add various tensio-active agents or surface smoothing agent.The thickness of binder layer 12b can be not particularly limited suitable setting, preferred 5～30 μ m.
Polymerizable compound for example can use at intramolecularly that can three-dimensional nettedization by rayed to have the low-molecular weight compound of at least 2 above optical polymerism carbon-to-carbon double bonds or have the polymkeric substance or the oligopolymer of optical polymerism carbon-to-carbon double bond group on substituting group.Particularly, can use Viscoat 295, pentaerythritol triacrylate, tetramethylol methane tetraacrylate, Dipentaerythritol monohydroxy five acrylate, dipentaerythritol acrylate, 1, multipolymer of vinylformic acid such as 4-butylene glycol diacrylate, 1,6 hexanediol diacrylate, polyethyleneglycol diacrylate or oligomer ester acrylate etc., Si acrylate or various esters of acrylic acids etc.
In addition, except that aforesaid acrylate based compound, can also use urethane acrylate is oligopolymer.Urethane acrylate is that oligopolymer is to make acrylate with hydroxyl or methacrylic ester (2-Hydroxy ethyl acrylate for example, methacrylic acid-2-hydroxy methacrylate, vinylformic acid-2-hydroxy propyl ester, methacrylic acid-2-hydroxy propyl ester, polyethylene glycol acrylate, polyethylene glycol methacrylate-styrene polymer etc.) obtain with the reaction of terminal isocyanate urethane prepolymer, described terminal isocyanate urethane prepolymer is to make polyol compounds such as polyester type or polyether-type and multicomponent isocyanate compound (for example 2, the 4-tolylene diisocyanate, 2, the 6-tolylene diisocyanate, 1, the 3-Xylene Diisocyanate, 1, the 4-Xylene Diisocyanate, ditan 4,4-vulcabond etc.) reaction obtains.Need to prove, in binder layer 12b, can mix be selected from the above-mentioned resin more than 2 kinds.The material of the tackiness agent of more than enumerating in addition, preferably is set at 40mJ/m with surface free energy 2Below, and in molecular structure, contain nonpolarity groups such as trifluoromethyl, dimetylsilyl, chain alkyl as much as possible.
Need to prove, in the resin of binder layer 12b, except that cooperating base material film 12a irradiation radioactive rays are made the binder layer 12b solidified radioactive rays polymerizable compound, also can suitably cooperate acrylic adhesive, Photoepolymerizationinitiater initiater, solidifying agent to prepare tackiness agent.
When using Photoepolymerizationinitiater initiater, for example can use: benzoin iso-propylether, bitter almond oil camphor ethyl isobutyl ether, benzophenone, michaelis ketone (Michler ketone), clopenthixal ketone, dodecyl thioxanthone, dimethyl thioxanthone, diethyl thioxanthone, benzyl dimethyl ketal, Alpha-hydroxy cyclohexyl-phenyl ketone, 2-hydroxymethyl phenyl-propane etc.The use level of these Photoepolymerizationinitiater initiaters is with respect to acrylic copolymer 100 mass parts, preferred 0.01～5 mass parts.
Need to prove, in the above-described embodiment, the wafer process as dicing die welding film is described with adhesive tape, but also can be applied to tacky film.Tacky film has on mold release film by the adhesive layer that forms with the same adhesive compound of above-mentioned embodiment.
As mold release film, for example can use: polyethylene film, polypropylene screen, polybutene film, polyhutadiene film, polymethylpentene film, polychloroethylene film, vinyl chloride copolymer film, polyethylene terephthalate film, poly (ethylene naphthalate) film, polybutylene terephthalate film, polyurethane film, ethylene vinyl acetate copolymer film, ionomer resin film, ethene (methyl) acrylic copolymer film, ethene (methyl) acrylate copolymer film, Polystyrene Film, polycarbonate membrane, polyimide film, fluororesin film etc.In addition, also can use their cross linking membrane.And, can be their stacked film.
The surface tension of mold release film is preferably below the 40mN/m, more preferably below the 35mN/m.The thickness of mold release film is generally 5～300 μ m, is preferably 10～200 μ m, is preferably especially about 20～150 μ m.
Tacky film can further coat protective membrane and use on adhesive layer.Under this situation, peel off the protective membrane on the adhesive layer, for example behind the overlapping adhesive layer that exposes on the binder layer of above-mentioned binder film, peel off above-mentioned film, thus adhesive layer can be set easily on binder layer from adhesive layer.As said protection film, just unqualified as long as can peel off from above-mentioned adhesive layer, preferred polyethylene terephthalate film, polypropylene screen, polyethylene film.In addition, above-mentioned each protective membrane preferably applies or sintering silicon.The thickness of protective membrane is not particularly limited, preferred 15～125 μ m.
(the wafer process using method of adhesive tape)
In the manufacturing process of semiconductor device, wafer process is used in such a way with adhesive tape 10.In Fig. 2 illustration be fitted with the situation of semiconductor wafer 1 and toroidal frame 20 on adhesive tape 10 in wafer process.At first, as shown in Figure 2, the binder layer 12b of binder film 12 is pasted on toroidal frame 20, makes semiconductor wafer 1 fit in adhesive layer 13.Its stickup order without limits can be after making semiconductor wafer 1 fit in adhesive layer 13, and the binder layer 12b with binder film 12 is pasted on toroidal frame 20 again.In addition, also can carry out the bonding of the stickup of binder film 12 and toroidal frame 20 and semiconductor wafer 1 and adhesive layer 13 simultaneously.
And then, implement the cutting action (Fig. 3) of semiconductor wafer 1, then, binder film 12 is implemented irradiation energy rays, ultraviolet operation for example.Particularly, for cutting blade 21 cutting semiconductor chips 1 and adhesive layer 13, utilize lower face side absorption and the supporting wafers processing adhesive tape 10 of absorptive table 22 from binder film 12.And, utilize cutting blade 21 that semiconductor wafer 1 and adhesive layer 13 are cut into 2 unitary semi-conductor chips and make its singualtion, thereafter, side irradiation energy ray below binder film 12.By this energy-ray irradiation, binder layer 12b is solidified, its bounding force is reduced.Need to prove, can replace the irradiation of energy-ray, and outside stimuluss such as utilization heating reduce the bounding force of the binder layer 12b of binder film 12.Stacked at binder layer 12b and under the situation about constituting by the binder layer more than two-layer, can make one deck or all layers curing in each binder layer by the energy-ray irradiation, one deck in each binder layer or the bounding force of all layers are reduced.
Thereafter, as shown in Figure 4, enforcement will maintain diametric(al) and the circumferential direction tensile expansion operation of the binder film 12 of the semi-conductor chip 2 that cuts into and adhesive layer 13 along toroidal frame 20.Particularly, binder film 12 for the state that maintains a plurality of semi-conductor chips 2 that cut into and adhesive layer 13, make of the lower face side rising of the ejector member 30 of hollow cylindrical, diametric(al) or the circumferential direction of binder film 12 along toroidal frame 20 stretched from binder film 12.By the expansion operation, widened the interval between the semi-conductor chip 2, improved the identification to semi-conductor chip 2 such as CCD photographic camera, simultaneously, bonding again between the semi-conductor chip 2 that can prevent from when picking up, to produce owing to the contact between the semi-conductor chip 2 of adjacency.
After implementing the expansion operation, as shown in Figure 5, under the state of having expanded binder film 12, directly implement the operation of picking up of picking up semiconductor chip 2.Particularly, side utilizes pin 31 with semi-conductor chip 2 jack-up below binder film 12, simultaneously,, thus, the semi-conductor chip 2 of monolithic is picked up with adhesive layer 13 with suction jig 32 absorption semi-conductor chips 2 from the upper face side of binder film 12.
And then, after implementing to pick up operation, implement the tube core welding sequence.Particularly, utilize the adhesive layer 13 that in picking up operation, together picks up with semi-conductor chip 2, semi-conductor chip 2 is bonding with lead frame or base plate for packaging etc.
(embodiment)
Below, embodiments of the invention are described, but the present invention is not limited to these embodiment.
(making of tacky film)
In the adhesive layer composition 1A～1J that cooperates according to the mode shown in the following table 1, add methyl ethyl ketone and mix making tackiness agent varnish.Peeling off on the overlay with dried thickness is the tackiness agent varnish that the mode of 5 μ m, 6 μ m, 7 μ m, 18 μ m, 20 μ m is smeared the adhesive layer composition 1A～1J that makes, drying is 3 minutes under 110 ℃, peels off at each and makes adhesive layer on overlay.Then, other mold release film same as described above of fitting on each adhesive layer is made the tacky film of peeling off these 3 layers of formations of overlay, adhesive layer and mold release film that stacks gradually in the comparative example 1～7 shown in embodiment 1～6 shown in the following table 2 and the following table 3.
[table 1]
The adhesive layer composition 1A 1B 1C 1D 1E 1F 1G 1H 1I 1J
A1 (acrylate copolymer) 100 100 100 100 100 100 100 100 100 100
B1 (Resins, epoxy (solid)) 65
B2 (Resins, epoxy (solid)) 68
B3 (Resins, epoxy (liquid state)) 17 34 34 51 13 14
B4 (Resins, epoxy (liquid state)) 74 65
C1 (solidifying agent 1) 24 48 48 72 58 14 17 87 77 55
The D1 curing catalyst) 0.3 0.6 0.6 0.9 0.9 0.2 0.21 1.15 1.1 0.9
E1 (silica filler 1) 53 300 00 488
E2 (silica filler 2) 300 468
E3 (silica filler 3) 130 130 60 130
The unit of the cooperation ratio of each composition in the table 1 is a mass parts.In addition, the A1 in the table 1 (acrylic acid polymer) is that weight-average molecular weight is 700,000, second-order transition temperature (Tg) is 6.1 ° acrylic copolymer.In addition, B1 (Resins, epoxy (solid-state)) is that epoxide equivalent is 223～238 naphthalene type Resins, epoxy.In addition, B2 (Resins, epoxy (solid-state)) is that epoxide equivalent is 265～285 biphenyl type epoxy resin.In addition, B3 (Resins, epoxy (liquid state)) is that epoxide equivalent is 165～195 liquid bisphenol F type Resins, epoxy.In addition, B4 (Resins, epoxy (liquid state)) is that epoxide equivalent is 175～190 liquid bisphenol A type Resins, epoxy.In addition, C1 (solidifying agent 1) is phenol-biphenylene resin.In addition, D1 (curing catalyst) is imidazolium compounds (a 2-phenylimidazole).In addition, E1 (silica filler 1) is that median size is the spherical synthetic silica of 0.5 μ m, E2 (silica filler 2) is that median size is the spherical synthetic silica of 1.6 μ m, and E3 (silica filler 3) is that median size is the spherical synthetic silica of 0.045 μ m.Need to prove, with regard to the median size of silica filler,, measure,, utilize specific surface area analysis (BET method) to measure about E3 with laser diffraction formula particle size distribution device about E1 and E2.
Carry out the evaluation in Determination of thickness, space, the evaluation of reliability test, the evaluation of warpage, the mensuration of shear bond power respectively for embodiment 1～6 and comparative example 1～7.In addition, table 2 expression is to each Determination of thickness of embodiment 1～6, the evaluation in space, the evaluation of reliability test, the evaluation of warpage, the mensuration of shear bond power, and table 3 is represented each Determination of thickness of comparative example 1～7, the evaluation in space, the evaluation of reliability test, the evaluation of warpage, the mensuration of shear bond power.
[table 2]
Embodiment 1 Embodiment 2 Embodiment 3 Embodiment 4 Embodiment 5 Embodiment 6
Form 1A 1B 1C 1D ?1G 1I
Thickness (μ m) 7 7 20 5 ?20 20
The space ○ ○ ○ ○ ?○ ○
Reliability result ○ ○ ○ ○ ?○ ○
Warpage ○ ○ ○ ○ ?○ ○
Shear bond power (MPa) 5 5 5 5 ?5 8
[table 3]
Comparative example 1 Comparative example 2 Comparative example 3 Comparative example 4 Comparative example 5 Comparative example 6 Comparative example 7
Form ?1A ?1B ?1C ?1E ?1F ?1H 1J
Thickness (μ m) ?6 ?6 ?18 ?5 ?20 ?20 5
The space ?× ?× ?× ?- ?○ ?○ -
Reliability result ?× ?× ?× ?- ?× ?× -
Warpage ?○ ?○ ?○ ?- ?○ ?× -
Shear bond power (MPa) ?2 ?2 ?3 ?- ?3 ?9 -
＜Determination of thickness 〉
Peel mold release film from tacky film, the thickness that uses ABS digital display dial gauge (DIGIMATIC INDICATORS) (itutoyo of M Co., Ltd. corporate system) to measure to peel off overlay and by the thickness of peeling off the duplexer that overlay and adhesive layer constitute will be set at the thickness of adhesive layer from the value that is deducted the thickness gained of peeling off overlay by the thickness of peeling off the duplexer that overlay and adhesive layer constitute.The thickness of the adhesive layer measured is shown in the item of " thickness " of table 2 and table 3.In addition, unit is μ m.
The evaluation in＜space 〉
Being heated on 70 ℃ the hot plate with the minute surface is that the mode of binding face is placed 6 inches silicon wafer up, on the minute surface of silicon wafer, utilize roller to fit to peel off overlay as supporter, peel the tacky film under the state of mold release film, utilized the visual detection space whether to produce.The evaluation result of observation is shown in the item in " space " of table 2 and table 3.In addition, sample number is 3.In addition, even it is bad will having 1 average evaluation in all samples with the sample in generation space, the interval below the 10mm, with " * " expression, it serves as good will not having the average evaluation with generation space, the interval below the 10mm in all samples, with " zero " expression.
The evaluation of＜reliability test 〉
Be heated to the silicon wafer of placing 100 μ m thickness on 70 ℃ the hot plate, (Co., Ltd.'s Furukawa corporate system: UC-344EP-85) dicing die of coupling welds film to utilize roller applying tacky film and binder film on the abrasive surface of silicon wafer.It is square with DAD340 (Disco of Co., Ltd. corporate system) silicon wafer to be cut into 10mm, forms chip.On the minute surface of submount wafer with 130 ℃/0.5s/0.1MPa weld the chip of the square band tacky film of 10mm thereafter.Use point to plate 42 alloys behind the Ag as substrate.Will be at (PKG:3mmt 30 * 30mm QFP208) after 175 ℃ of lower mold, the material that under 175 ℃, was heating and curing 4 hours as sample, each prepares 4, after in the atmosphere of 85 ℃ of temperature, humidity 65%, exposing 168 hours (envrionment test, JEDEC LEVEL2), on the gluing surface of chip that has carried out the tube core welding and submount wafer, observe having or not of peeling off with ultrasonic microscope (SAT).The evaluation result of observation is shown in the item of " the reliability result " of table 2 and table 3.In addition, will in all samples, be good all less than producing the average evaluation of peeling off, with " zero " expression, the average evaluation that will produce the sample of peeling off more than in all samples is bad, represents with " * ".
The mensuration of＜shear bond power 〉
Be heated to the silicon wafer of placing 100 μ m thickness on 70 ℃ the hot plate, in that to utilize roller to fit to peel off overlay on the abrasive surface of silicon wafer be supporter, peeled the tacky film under the state of mold release film.Thereafter, peel and peel off overlay, (Co., Ltd.'s Furukawa corporate system: UC-344EP-85), it is square with DAD340 (Disco of Co., Ltd. corporate system) silicon wafer to be cut into 5mm, forms chip to paste binder film on tacky film.On the minute surface of submount wafer with 150 ℃/3s/100gf weld the chip of the square band tacky film of 5mm thereafter.As submount wafer, use silicon wafer to cut into the square submount wafer of 10mm with DAD340 (Disco of Co., Ltd. corporate system) with 650 μ m thickness.Thereafter, the submount wafer that will be heating and curing 4 hours under 175 ℃ is as sample, and each prepares 10, uses omnipotent bond tester series 4000 (Arctec of Co., Ltd. corporate system), measures shear bond power down at 265 ℃, obtains mean value.The mean value of the shear bond power of gained is shown in the item of " the shear bond power " of table 2 and table 3.In addition, unit is MPa.
The evaluation of＜warpage 〉
Be heated to the silicon wafer of placing 100 μ m thickness on 70 ℃ the hot plate, utilize on the abrasive surface of silicon wafer roller fit with peel off overlay as supporter, peeled the tacky film under the state of mold release film.Thereafter, peel and peel off overlay, (Co., Ltd.'s Furukawa corporate system: UC-344EP-85), it is square with DAD340 (Disco of Co., Ltd. corporate system) silicon wafer to be cut into 5mm, forms chip to paste binder film on tacky film.Thereafter, will be square, the material of chip that is laminated with the band tacky film on the copperplate of 125 μ m thickness is as sample at 14mm, each prepares 5, is determined at the poor of thickness before and after 175 ℃ of following heat treated 4 hours, carries out the evaluation of warpage.Evaluation result is shown in the item of " warpage " of table 2 and table 3.In addition, with the difference of the thickness measured is that to have more than one average evaluation in all samples be bad for sample more than the 50 μ m, with " * " expression, the difference of the thickness measured is lower than 50 μ m in all samples average evaluation is for good, with " zero " expression.
As shown in table 2, with regard to the adhesive layer of embodiment 1, with respect to thickness X (=7) μ m, the particle diameter of the filler that is cooperated is 0.5 following μ m of 0.08X (=0.56) μ m, therefore, can do not produced the good result that space, warpage are lower than 50 μ m, can obtain shear bond power is the big like this value of 5MPa.Therefore, reliability test also can obtain good result.In addition, with respect to acrylic acid series copolymer resins 100 mass parts, Resins, epoxy and solidifying agent are 41 mass parts, in the scope more than 30 mass parts below 145 mass parts.
With regard to the adhesive layer of embodiment 2, with respect to thickness X (=7) μ m, the particle diameter of the filler that is cooperated is 0.5 following μ m of 0.08X (=0.56) μ m, therefore, can not produced the good result that space, warpage are lower than 50 μ m.Can obtain shear bond power is the big like this value of 5MPa.Therefore, reliability test also can obtain good result.In addition, with respect to acrylic acid series copolymer resins 100 mass parts, Resins, epoxy and solidifying agent are 82 mass parts, in the scope more than 30 mass parts below 145 mass parts.
With regard to the adhesive layer of embodiment 3, with respect to thickness X (=20) μ m, the particle diameter of the filler that is cooperated is 1.6 following μ m of 0.08X (=1.6) μ m, therefore, can not produced the good result that space, warpage also are lower than 50 μ m.Can obtain shear bond power is the big like this value of 5MPa.Therefore, reliability test also can obtain good result.In addition, with respect to acrylic acid series copolymer resins 100 mass parts, Resins, epoxy and solidifying agent are 82 mass parts, in the scope more than 30 mass parts below 145 mass parts.
With regard to the adhesive layer of embodiment 4, with respect to thickness X (=5) μ m, the particle diameter of the filler that is cooperated is 0.045 following μ m of 0.08X (=0.40) μ m, therefore, can not produced the good result that space, warpage are lower than 50 μ m.Can obtain shear bond power is the big like this value of 5MPa.Therefore, reliability test also can obtain good result.In addition, with respect to acrylic acid series copolymer resins 100 mass parts, Resins, epoxy and solidifying agent are 123 mass parts, in the scope more than 30 mass parts below 145 mass parts.
With regard to the adhesive layer of embodiment 5, with respect to thickness X (=20) μ m, the particle diameter of the filler that is cooperated is 0.045 following μ m of 0.08X (=1.6) μ m, therefore, can not produced the good result that space, warpage are lower than 50 μ m.Can obtain shear bond power is the big like this value of 5MPa.Therefore, reliability test also can obtain good result.In addition, with respect to acrylic acid series copolymer resins 100 mass parts, Resins, epoxy and solidifying agent are 31 mass parts, in the scope more than 30 mass parts below 145 mass parts.
With regard to the adhesive layer of embodiment 6, with respect to thickness X (=20) μ m, the particle diameter of the filler that is cooperated is 1.6 following μ m of 0.08X (=1.6) μ m, therefore, can not produced the good result that space, warpage are lower than 50 μ m.Can obtain shear bond power is the big like this value of 8MPa.Therefore, reliability test also can obtain good result.In addition, with respect to acrylic acid series copolymer resins 100 mass parts, Resins, epoxy and solidifying agent are 142 mass parts, in the scope more than 30 mass parts below 145 mass parts.
On the other hand, as shown in table 3, with regard to the adhesive layer of comparative example 1, with respect to thickness X (=6) μ m, the particle diameter of the filler that is cooperated is 0.5 μ m greater than 0.08X (=0.48) μ m, therefore, produced the space, shear bond power is the so little value of 2MPa.Therefore, in reliability test, produce and peel off.
With regard to the adhesive layer of comparative example 2, with respect to thickness X (=6) μ m, the particle diameter of the filler that is cooperated is 0.5 μ m greater than 0.08X (=0.48) μ m, therefore, produces the space, and shear bond power is the so little value of 2MPa.Therefore, in reliability test, produce and peel off.
With regard to the adhesive layer of comparative example 3, with respect to thickness X (=18) μ m, the particle diameter of the filler that is cooperated is 1.6 μ m greater than 0.08X (=1.44) μ m, therefore, produces the space, and shear bond power is the so little value of 3MPa.Therefore, in reliability test, produce and peel off.
About the adhesive layer of comparative example 4, Resins, epoxy uses solid-state material, and therefore, the flowability of the adhesive layer during applying is poor, tacky film can not be fitted in silicon wafer.
With regard to the adhesive layer of comparative example 5, with respect to thickness X (=20) μ m, the particle diameter of the filler that is cooperated is 0.5 following μ m of 0.08X (=1.6) μ m, therefore, can not produced the space, warpage is the good result of less than 50 μ m.But, be 27 mass parts with respect to acrylic acid series copolymer resins 100 mass parts, Resins, epoxy and solidifying agent, not more than 30 mass parts in the scope below 145 mass parts, so shear bond power also is the low like this value of 3MPa.Therefore, in reliability test, produce and peel off.
With regard to the adhesive layer of comparative example 6, with respect to thickness X (=20) μ m, the particle diameter of the filler that is cooperated is 0.5 following μ m of 0.08X (=1.6) μ m, therefore, does not produce the space, and shear bond power is the big like this value of 8MPa.But with respect to acrylic acid series copolymer resins 100 mass parts, Resins, epoxy and solidifying agent are 27 mass parts, not more than 30 mass parts in the scope below 145 mass parts, so it is big that warpage becomes, and is more than the 50 μ m.Therefore, in reliability test, produce and peel off.
About the adhesive layer of comparative example 7, in Resins, epoxy, use solid-state material, therefore, the flowability of the adhesive layer during applying is poor, can not make tacky film fit in silicon wafer.
Result by table 2 and table 3 learns, by with thickness X μ m with respect to adhesive layer, the particle diameter of filler is that the following mode of 0.08X μ m is made tacky film, can prevent the space when tacky film and wafer are fitted, and can obtain the high tacky film of few, the gluing reliability of warpage.And learn that by with respect to acrylic acid series copolymer resins 100 mass parts, Resins, epoxy and solidifying agent are in the following scope of above 145 mass parts of 30 mass parts, can obtain the high tacky film of gluing reliability.

Claims (3)

1. a wafer process adhesive tape is characterized in that, have to contain the acrylic acid series copolymer resins at least, at room temperature be the adhesive layer of liquid Resins, epoxy, described curing agent for epoxy resin and filler, wherein,
With respect to the thickness X μ m of described adhesive layer, the median size of described filler is below 0.08X μ m.
2. wafer process adhesive tape as claimed in claim 1 is characterized in that,
With respect to described acrylic acid series copolymer resins 100 mass parts, contain following described Resins, epoxy and the described solidifying agent of above 145 mass parts of 30 mass parts.
3. wafer process adhesive tape as claimed in claim 1 or 2 is characterized in that,
The stacked adhesive layer of stating to some extent on the binder layer that is arranged on the base material film.
CN2011100788980A 2010-03-31 2011-03-28 Adhesive tape for wafer processing Pending CN102220091A (en)

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Cited By (5)

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CN107204308A (en) * 2016-10-08 2017-09-26 武汉市三选科技有限公司 A kind of thin slice and preparation method and circuit substrate and preparation method containing the thin slice
CN108587502A (en) * 2018-05-02 2018-09-28 广东硕成科技有限公司 A kind of semiconductor crystal wafer processing adhesive tape and preparation method thereof
CN109971376A (en) * 2017-12-28 2019-07-05 日东电工株式会社 Cut die bonding film
CN111742029A (en) * 2018-02-05 2020-10-02 迪睿合株式会社 Adhesive composition, thermosetting adhesive sheet, and printed wiring board
CN112513217A (en) * 2018-08-03 2021-03-16 昭和电工材料株式会社 Adhesive composition, film-like adhesive, adhesive sheet, and method for manufacturing semiconductor device

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Publication number Priority date Publication date Assignee Title
TW200934850A (en) * 2007-12-10 2009-08-16 Lg Chemical Ltd Adhesive film, dicing die bonding film and semiconductor device using the same

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Publication number Priority date Publication date Assignee Title
TW200934850A (en) * 2007-12-10 2009-08-16 Lg Chemical Ltd Adhesive film, dicing die bonding film and semiconductor device using the same

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107204308A (en) * 2016-10-08 2017-09-26 武汉市三选科技有限公司 A kind of thin slice and preparation method and circuit substrate and preparation method containing the thin slice
CN109971376A (en) * 2017-12-28 2019-07-05 日东电工株式会社 Cut die bonding film
CN109971376B (en) * 2017-12-28 2022-05-10 日东电工株式会社 Dicing die bonding film
CN111742029A (en) * 2018-02-05 2020-10-02 迪睿合株式会社 Adhesive composition, thermosetting adhesive sheet, and printed wiring board
CN111742029B (en) * 2018-02-05 2023-11-07 迪睿合株式会社 Adhesive composition, thermosetting adhesive sheet, and printed wiring board
CN108587502A (en) * 2018-05-02 2018-09-28 广东硕成科技有限公司 A kind of semiconductor crystal wafer processing adhesive tape and preparation method thereof
CN108587502B (en) * 2018-05-02 2019-09-03 广东硕成科技有限公司 A kind of semiconductor crystal wafer processing adhesive tape and preparation method thereof
CN112513217A (en) * 2018-08-03 2021-03-16 昭和电工材料株式会社 Adhesive composition, film-like adhesive, adhesive sheet, and method for manufacturing semiconductor device

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