CN102337089B - Wafer processing adhesive tape and method for processing semiconductor therewith - Google Patents
Wafer processing adhesive tape and method for processing semiconductor therewith Download PDFInfo
- Publication number
- CN102337089B CN102337089B CN201110188172.2A CN201110188172A CN102337089B CN 102337089 B CN102337089 B CN 102337089B CN 201110188172 A CN201110188172 A CN 201110188172A CN 102337089 B CN102337089 B CN 102337089B
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- China
- Prior art keywords
- methyl
- base material
- adhesive tape
- adhesive
- acrylic acid
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 110
- 239000002390 adhesive tape Substances 0.000 title claims abstract description 46
- 238000012545 processing Methods 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 116
- 239000004568 cement Substances 0.000 claims abstract description 69
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims abstract description 43
- 229920000554 ionomer Polymers 0.000 claims abstract description 43
- 229920005989 resin Polymers 0.000 claims abstract description 39
- 239000011347 resin Substances 0.000 claims abstract description 39
- 238000006386 neutralization reaction Methods 0.000 claims abstract description 26
- 150000001875 compounds Chemical class 0.000 claims abstract description 22
- 229920001577 copolymer Polymers 0.000 claims abstract description 19
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 19
- 239000004593 Epoxy Substances 0.000 claims abstract description 15
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 4
- 230000001070 adhesive effect Effects 0.000 claims description 111
- 239000000853 adhesive Substances 0.000 claims description 110
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 33
- 238000003475 lamination Methods 0.000 claims description 24
- 238000003672 processing method Methods 0.000 claims description 14
- 125000005250 alkyl acrylate group Chemical group 0.000 claims description 13
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- 239000004575 stone Substances 0.000 claims description 10
- XSMJZKTTXZAXHD-UHFFFAOYSA-N ethene;2-methylprop-2-enoic acid Chemical compound C=C.CC(=C)C(O)=O XSMJZKTTXZAXHD-UHFFFAOYSA-N 0.000 claims description 7
- 238000005520 cutting process Methods 0.000 abstract description 119
- 239000010410 layer Substances 0.000 abstract description 72
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- 238000004132 cross linking Methods 0.000 abstract 1
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- 230000000052 comparative effect Effects 0.000 description 9
- -1 methyl hydrogen Chemical compound 0.000 description 9
- 239000011701 zinc Substances 0.000 description 9
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 8
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- 229910052725 zinc Inorganic materials 0.000 description 8
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- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 238000013459 approach Methods 0.000 description 4
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 4
- 229920001897 terpolymer Polymers 0.000 description 4
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 3
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- 125000000217 alkyl group Chemical group 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- UHESRSKEBRADOO-UHFFFAOYSA-N ethyl carbamate;prop-2-enoic acid Chemical compound OC(=O)C=C.CCOC(N)=O UHESRSKEBRADOO-UHFFFAOYSA-N 0.000 description 3
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- QNODIIQQMGDSEF-UHFFFAOYSA-N (1-hydroxycyclohexyl)-phenylmethanone Chemical compound C=1C=CC=CC=1C(=O)C1(O)CCCCC1 QNODIIQQMGDSEF-UHFFFAOYSA-N 0.000 description 2
- 229940044192 2-hydroxyethyl methacrylate Drugs 0.000 description 2
- VVBLNCFGVYUYGU-UHFFFAOYSA-N 4,4'-Bis(dimethylamino)benzophenone Chemical compound C1=CC(N(C)C)=CC=C1C(=O)C1=CC=C(N(C)C)C=C1 VVBLNCFGVYUYGU-UHFFFAOYSA-N 0.000 description 2
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- SOGAXMICEFXMKE-UHFFFAOYSA-N Butylmethacrylate Chemical compound CCCCOC(=O)C(C)=C SOGAXMICEFXMKE-UHFFFAOYSA-N 0.000 description 2
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- 239000005041 Mylar™ Substances 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
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- 229940106691 bisphenol a Drugs 0.000 description 2
- NYVPYOCCTPDTKV-UHFFFAOYSA-N carbamic acid;isocyanic acid Chemical group N=C=O.NC(O)=O NYVPYOCCTPDTKV-UHFFFAOYSA-N 0.000 description 2
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- 238000000576 coating method Methods 0.000 description 2
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- 150000004678 hydrides Chemical class 0.000 description 2
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- 229920005749 polyurethane resin Polymers 0.000 description 2
- 238000012797 qualification Methods 0.000 description 2
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- 238000012360 testing method Methods 0.000 description 2
- ZAMZCSIXTWIEDY-UHFFFAOYSA-N (2-propylphenyl)methanol Chemical compound CCCC1=CC=CC=C1CO ZAMZCSIXTWIEDY-UHFFFAOYSA-N 0.000 description 1
- GJZFGDYLJLCGHT-UHFFFAOYSA-N 1,2-diethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=C(CC)C(CC)=CC=C3SC2=C1 GJZFGDYLJLCGHT-UHFFFAOYSA-N 0.000 description 1
- UYEDESPZQLZMCL-UHFFFAOYSA-N 1,2-dimethylthioxanthen-9-one Chemical class C1=CC=C2C(=O)C3=C(C)C(C)=CC=C3SC2=C1 UYEDESPZQLZMCL-UHFFFAOYSA-N 0.000 description 1
- MSAHTMIQULFMRG-UHFFFAOYSA-N 1,2-diphenyl-2-propan-2-yloxyethanone Chemical compound C=1C=CC=CC=1C(OC(C)C)C(=O)C1=CC=CC=C1 MSAHTMIQULFMRG-UHFFFAOYSA-N 0.000 description 1
- DKEGCUDAFWNSSO-UHFFFAOYSA-N 1,8-dibromooctane Chemical compound BrCCCCCCCCBr DKEGCUDAFWNSSO-UHFFFAOYSA-N 0.000 description 1
- CTOHEPRICOKHIV-UHFFFAOYSA-N 1-dodecylthioxanthen-9-one Chemical class S1C2=CC=CC=C2C(=O)C2=C1C=CC=C2CCCCCCCCCCCC CTOHEPRICOKHIV-UHFFFAOYSA-N 0.000 description 1
- GZBSIABKXVPBFY-UHFFFAOYSA-N 2,2-bis(hydroxymethyl)propane-1,3-diol;prop-2-enoic acid Chemical compound OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OCC(CO)(CO)CO GZBSIABKXVPBFY-UHFFFAOYSA-N 0.000 description 1
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 1
- JMWGZSWSTCGVLX-UHFFFAOYSA-N 2-ethyl-2-(hydroxymethyl)propane-1,3-diol;2-methylprop-2-enoic acid Chemical class CC(=C)C(O)=O.CC(=C)C(O)=O.CC(=C)C(O)=O.CCC(CO)(CO)CO JMWGZSWSTCGVLX-UHFFFAOYSA-N 0.000 description 1
- GWZMWHWAWHPNHN-UHFFFAOYSA-N 2-hydroxypropyl prop-2-enoate Chemical compound CC(O)COC(=O)C=C GWZMWHWAWHPNHN-UHFFFAOYSA-N 0.000 description 1
- GILMNGUTRWPWSY-UHFFFAOYSA-N 2-hydroxypropyl prop-2-enoate;2-methylprop-2-enoic acid Chemical compound CC(=C)C(O)=O.CC(O)COC(=O)C=C GILMNGUTRWPWSY-UHFFFAOYSA-N 0.000 description 1
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- CVEPFOUZABPRMK-UHFFFAOYSA-N 2-methylprop-2-enoic acid;styrene Chemical compound CC(=C)C(O)=O.C=CC1=CC=CC=C1 CVEPFOUZABPRMK-UHFFFAOYSA-N 0.000 description 1
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 description 1
- JHWGFJBTMHEZME-UHFFFAOYSA-N 4-prop-2-enoyloxybutyl prop-2-enoate Chemical compound C=CC(=O)OCCCCOC(=O)C=C JHWGFJBTMHEZME-UHFFFAOYSA-N 0.000 description 1
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- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
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- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 244000028419 Styrax benzoin Species 0.000 description 1
- 235000000126 Styrax benzoin Nutrition 0.000 description 1
- 235000008411 Sumatra benzointree Nutrition 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- DAKWPKUUDNSNPN-UHFFFAOYSA-N Trimethylolpropane triacrylate Chemical compound C=CC(=O)OCC(CC)(COC(=O)C=C)COC(=O)C=C DAKWPKUUDNSNPN-UHFFFAOYSA-N 0.000 description 1
- HVVWZTWDBSEWIH-UHFFFAOYSA-N [2-(hydroxymethyl)-3-prop-2-enoyloxy-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(CO)(COC(=O)C=C)COC(=O)C=C HVVWZTWDBSEWIH-UHFFFAOYSA-N 0.000 description 1
- SSOONFBDIYMPEU-UHFFFAOYSA-N [3-hydroxy-2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propyl] prop-2-enoate Chemical compound OCC(CO)(CO)COCC(CO)(CO)COC(=O)C=C SSOONFBDIYMPEU-UHFFFAOYSA-N 0.000 description 1
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- RPQRDASANLAFCM-UHFFFAOYSA-N oxiran-2-ylmethyl prop-2-enoate Chemical compound C=CC(=O)OCC1CO1 RPQRDASANLAFCM-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/35—Heat-activated
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
- C09J7/25—Plastics; Metallised plastics based on macromolecular compounds obtained otherwise than by reactions involving only carbon-to-carbon unsaturated bonds
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
- C09J7/25—Plastics; Metallised plastics based on macromolecular compounds obtained otherwise than by reactions involving only carbon-to-carbon unsaturated bonds
- C09J7/255—Polyesters
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/38—Pressure-sensitive adhesives [PSA]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
- H01L21/4842—Mechanical treatment, e.g. punching, cutting, deforming, cold welding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/20—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself
- C09J2301/208—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself the adhesive layer being constituted by at least two or more adjacent or superposed adhesive layers, e.g. multilayer adhesive
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/50—Additional features of adhesives in the form of films or foils characterized by process specific features
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- Chemical & Material Sciences (AREA)
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- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Adhesive Tapes (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Dicing (AREA)
Abstract
The invention provides a wafer processing adhesive tape capable of fully inhibiting re-bonding of semiconductor chips during pickup and a method for processing a semiconductor therewith. The wafer processing tape is a cutting chip sticking tape 10 of a wafer-processing-used adhesive tape of a thermosetting cement layer 13 comprising a compound provided with epoxy radical and laminated on an adhesive layer 12b of a cutting tape 12 of a bonding tape formed by a supporting base material 12a and an adhesive layer 12b, the wafer-processing-used adhesive tape is characterized in that: the supporting base material 12a is formed by ionomer resin formed by crosslinking of metal ions used for ethylene-(methyl) acrylic acid binary copolymers or ethylene- (methyl) acrylic acid- (methyl) acrylic acid alkyl ester ternary copolymers; weight part fraction of the (methyl) acrylic acid component in the copolymer is more than 1% and less than 10%, and the neutralization degree of the (methyl) acrylic acid in the ionomer resin is more than 50%.
Description
Technical field
The semiconductor processing method that the present invention relates to the adhesive tape for wafer processing using in the manufacturing process of semiconductor device and use this adhesive tape for wafer processing, particularly relate to the slim grinding stone that utilizes High Rotation Speed come dividing semiconductor wafer and cement layer cutting action and by by cutting apart by the semiconductor wafer of singualtion with together being picked up by the cement layer of singualtion by cutting apart diced chip adhesive band used and the semiconductor processing method that uses this diced chip adhesive band in the chip attach operation of lamination on substrate.
Background technology
As the adhesive tape for wafer processing using in the manufacturing process of semiconductor device, the diced chip adhesive band (for example patent documentation 1～3) that the heat cured adhesive film that someone has proposed lamination cutting belt (adhesive tape) and has contained epoxy resin composition forms.These diced chip adhesive bands contain the compound with epoxy radicals at cement layer (adhesive film), thereby can be by hot curing, semiconductor chip and substrate is bonding securely.In addition, by making the adhesive phase of cutting belt, it is energy ray-curable, can the bonding force that reduce cutting belt such as irradiate by UV, be easy to the interface of release adhesive layer and cement layer, can make, by cutting apart, semiconductor chip is carried out to the semiconductor wafer of singualtion and together from cutting belt, pick up with the cement layer that carries out singualtion by cutting apart.
For above-mentioned such diced chip adhesive band, require to have and can positively cut off singualtion to semiconductor wafer and cement layer; Pick up blocks ofly, with good qualification rate, be provided in the performance in chip attach operation, and require semiconductor chip and substrate bonding performance securely.
But, in above-mentioned such diced chip adhesive band, when the slim grinding stone that utilizes High Rotation Speed together cuts semiconductor wafer and cement layer, ought to by the cement layer of singualtion be there is adhesion again in some, when picking up, a part for semiconductor chip is supplied to chip attach operation with adjacent semiconductor core sector-meeting under the state being connected, produce so-called " dual chip picks up mistake (ダ Block Le ダ イ エ ラ mono-) ", there is the shortcoming of the qualification rate variation of operation.
In order to suppress the generation of " dual chip picks up mistake ", thereby at least need to expand to a certain extent by expansion cutting belt, expand the destruction that adhesion is again carried out in semiconductor chip interval trial each other.Thereby, require the support base material of cutting belt to there is even opening property of expansion; As such cutting belt, someone has proposed support base material by ethene-(methyl) acrylic acid bipolymer or ethene-(methyl) acrylic acid-(methyl) alkyl acrylate terpolymer or these materials has been carried out to chelate with metal ion to be cross-linked the ionomer resin forming and the adhesive tape (for example patent documentation 4～8) forming.
Prior art document
Patent documentation
Patent documentation 1: TOHKEMY 2002-226796 communique
Patent documentation 2: TOHKEMY 2005-303275 communique
Patent documentation 3: TOHKEMY 2006-299226 communique
Patent documentation 4: Japanese kokai publication hei 5-156219 communique
Patent documentation 5: Japanese kokai publication hei 5-211234 communique
Patent documentation 6: TOHKEMY 2000-345129 communique
Patent documentation 7: TOHKEMY 2003-158098 communique
Patent documentation 8: TOHKEMY 2007-88240 communique
Summary of the invention
Invent problem to be solved
But, even such cutting belt also may not fully have and suppress the effect that dual chip picks up wrong generation, there is occasional generation dual chip and pick up wrong problem.Therefore, in order further to suppress dual chip, pick up wrong generation, require fully to suppress semiconductor chip adhesion more each other when picking up.
The present invention carries out in order to solve above-mentioned problem, the object of the present invention is to provide and when picking up, can fully suppress the adhesive tape for wafer processing of semiconductor chip adhesion more each other and the semiconductor processing method that uses this adhesive tape for wafer processing.
The adopted means of dealing with problems
Invention described in scheme 1 relates to by the adhesive tape for wafer processing of thermosetting cement layer that contains the compound with epoxy radicals of having supported lamination on this adhesive phase of the adhesive tape that base material and adhesive phase form, and this adhesive tape for wafer processing is characterised in that:
Above-mentioned support base material consists of the ionomer resin that ethene-(methyl) acrylic acid bipolymer or ethene-(methyl) acrylic acid-(methyl) alkyl acrylate terpolymer are formed by metal ion crosslinked;
The weight fraction of above-mentioned (methyl) acrylic component in above-mentioned copolymer is more than 1% and less than 10%, and above-mentioned (methyl) the acrylic acid degree of neutralization in above-mentioned ionomer resin is more than 50%.
Invention described in scheme 2 relates to the adhesive tape for wafer processing described in scheme 1, it is characterized in that, above-mentioned adhesive phase has one deck or two layers of above structure, and at least one deck is wherein formed by energy ray-curable adhesive.
Invention described in scheme 3 relates to the semiconductor processing method of the adhesive tape for wafer processing described in operational version 1 or 2, and this semiconductor processing method is characterised in that, it possesses following operation:
Semiconductor wafer is conformed to the operation of above-mentioned adhesive tape for wafer processing;
Next use the slim grinding stone of High Rotation Speed to cut above-mentioned cement layer and the above-mentioned adhesive phase of above-mentioned semiconductor wafer and above-mentioned adhesive tape for wafer processing, simultaneously to the above-mentioned support base material of this adhesive tape for wafer processing more than thickness direction cuts 10 μ m, this semiconductor wafer and this cement layer are carried out to the operation of singualtion; And
Then, under the state in above-mentioned wafer process with the above-mentioned adhesive tape expansion of adhesive tape, the operation of picking up the above-mentioned semiconductor wafer of singualtion blocks ofly.
Invention described in scheme 4 relates to the semiconductor processing method described in scheme 3, it is characterized in that, the thickness of above-mentioned support base material is more than 60 μ m; In above-mentioned singualtion operation, above-mentioned support base material is cut to 10～30 μ m at thickness direction.
Below to describing for completing fact of the present invention.
In the cutting action of slim grinding stone that uses High Rotation Speed, about cement layer that should singualtion, there is the part reason of the generation of the what is called of adhesion " dual chip picks up mistake " again, the inventor finds, be that aggregation due to the cutting swarf of the chip that contains the cement layer together cutting with semiconductor wafer is blocked in semiconductor chip adjacent shown in Fig. 6 each other, thereby cause the adhesion more each other of adjacent semiconductor chip.
Adjacent semiconductor chip due to the cutting swarf that contains cement composition like this sticking in again each other picked up operation can make cutting belt (adhesive tape) expansion, increases semiconductor chip interval each other, thereby sometimes also can destroy adhesion again.In order to expand whole semiconductor chips interval each other, require the support base material of cutting belt to there is even dilatancy, as the material of such support base material, can enumerate ethene-(methyl) acrylic acid bipolymer or ethene-(methyl) acrylic acid-(methyl) alkyl acrylate terpolymer or any ionomer resin forming by metal ion crosslinked wherein.
Yet, in this adhesion firmly in situation again, in order to destroy whole adhesions again, only support the even dilatancy of base material insufficient, also need in the lump to make the embrittlement of adhesion part again.
If remove the compound with epoxy radicals in the cement layer of diced chip adhesive band, along with the reduction of the adhesive property due to the hot curing of this cement layer, the cement composition of take in the cutting swarf producing in cutting action is that the bonding force in source also reduces.Its result, also there is embrittlement in the part of adhesion again between adjacent semiconductor chip, can suppress dual chip and pick up wrong generation, but under these circumstances, cement layer can reduce with respect to the bonding force of semiconductor chip, and performance is originally impaired.
Thereby, as suppressing dual chip, pick up the wrong countermeasure producing, require such method: in the situation that can not reduce the contained compound with epoxy radicals of bonding material layer, the generation of the adhesion again embrittlement each other of the semiconductor chip due to the cutting swarf that makes to contain cement composition.
The inventor conducts in-depth research, found that, by making the ratio of (methyl) acrylic component in ethene used in the support base material of diced chip adhesive band-(methyl) acrylic acid bipolymer or ethene-(methyl) acrylic acid-(methyl) alkyl acrylate terpolymer be less than specified quantitative and carry out ionomer with metal ion, can suppress dual chip and pick up wrong generation.By inhibition, support (methyl) acrylic component of ionomer resin used in base material and form stable complex compound with metal ion to reduce reactivity, can suppress reacting between the carboxyl of (methyl) acrylic component and the compound with epoxy radicals in cement layer, thereby can reduce base material bits composition in the cutting swarf producing in cutting action and cement and consider bonding force between composition to be worth doing, can make the adhesion between the semiconductor chip due to cutting swarf that embrittlement partly occurs.
Having support base material even dilatancy to be provided fully, to suppress the material that dual chip picks up the effect of wrong generation is simultaneously that the weight fraction less than 10% of (methyl) acrylic component in copolymer (bipolymer, terpolymer) and (methyl) the acrylic acid degree of neutralization in ionomer resin are more than 50% ionomer resin, more preferably the weight fraction of (methyl) acrylic component be 3%～5% and (methyl) acrylic acid degree of neutralization be more than 50% ionomer resin.
If support, the weight fraction of (methyl) acrylic component in the copolymer in base material (ionomer resin) is more than 1%, can expect to support that base material has even dilatancy; If more than 3%, can further expect to support the even dilatancy of base material.
The weight fraction of (methyl) acrylic component in the copolymer in ionomer resin can be by being undertaken quantitatively the methods such as NMR and thermal decomposition GC-ms spectroscopic assay are combined.
For example, can be identified by the peak of thermal decomposition GC-ms spectrum the alkyl in the Arrcostab territory of ethene-(methyl) acrylic acid-(methyl) alkyl acrylate terpolymer.
In addition, if use
1h-NMR, can be by comparing the integrated value at the α position hydrogen of (methyl) acrylic acid units in the ionomer resin of ethene-(methyl) acrylic acid bipolymer or the integrated value at peak of methyl hydrogen of (methyl) acrylic acid units and the peak of the hydrogen of ethylene unit to come quantitatively.In the situation that observe the peak phase mutual of the ester end of ethene end that the peak of the methyl that derives from (methyl) acrylic acid units is close with deriving from chemical shift or (methyl) alkyl acrylate, partially overlap, owing to deriving from the peak of the methyl of (methyl) acrylic acid units, in lower magnetic field side, show peak, thereby can estimate according to downfield side integration the mark of (methyl) acrylic component.For ethene-(methyl) acrylic acid-(methyl) alkyl acrylate terpolymer, also still can be by using
1h-NMR, according to the peak of (methyl) acrylic acid and the α position hydrogen of (methyl) alkyl acrylate or the methyl hydrogen of (methyl) acrylic acid units, (methyl) acrylic acid mark and the total of the mark of (methyl) alkyl acrylate are carried out quantitatively, further, mark for (methyl) acrylic acid alkyl ester units, can be according to the peak of the hydrogen of 1 carbon phase bonding with alkyl, only quantify the mark of (methyl) alkyl acrylate, thereby can calculate (methyl) acrylic acid weight fraction.
Further, by utilizing metal ion to make (methyl) acrylic acid degree of neutralization, be more than 50%, can suppress (methyl) acrylic component of ionomer resin and can form stable complex compound with metal ion to make reactivity reduce, can suppress reacting between the carboxyl of (methyl) acrylic component and the compound with epoxy radicals in cement layer, thereby can reduce base material in the cutting swarf producing in cutting action bits composition and consider the bonding force between composition to be worth doing with cement, so that partly there is embrittlement in the adhesion between the semiconductor chip due to cutting swarf.Its result, can positively suppress dual chip and pick up wrong generation.Above-mentioned (methyl) acrylic acid degree of neutralization can utilize the various spectrum analysis such as ICP luminesceence analysis to carry out quantification.For example, can utilize ICP luminesceence analysis carry out simultaneously the evaluation of the metal ion kind in ionomer and weight fraction thereof quantitatively.Further, if utilize, above-mentioned NMR and the combined method of thermal decomposition GC-ms spectroscopic assay are obtained to (methyl) the acrylic acid weight fraction in ionomer, can combine with the information of above-mentioned metal ion, degree of neutralization is carried out to quantification.
By by such support substrate applications in the adhesive tape for wafer processings such as diced chip adhesive band, can suppress dual chip to pick up wrong generation, in addition, in cutting action, to supporting that the approach in base material is darker, its effect is larger.On the other hand, if to the approach of supporting base material increase to required more than, may rupture during adhesive tape expansion.
If to supporting the approach of base material for more than cutting 10 μ m to thickness direction, have and suppress fully the effect that dual chip picks up wrong generation; If to supporting base material to carry out cutting below 30 μ m and the thickness of this support base material is more than 60 μ m to thickness direction, can prevent from supporting the fracture of base material.
In addition, by making the adhesive phase of above-mentioned diced chip adhesive band there are one deck or two layers of above structure, at least one deck is wherein formed by energy ray-curable adhesive, can in cutting action, there is the sufficient bonding force that keeps securely semiconductor wafer required, but after cutting, the bonding force of cutting belt but still can be reduced by irradiation energy ray effectively, therefore in picking up operation, can not apply excessive load to semiconductor chip, the cement layer of semiconductor chip and singualtion easily can be peeled off from the adhesive layer surface of cutting belt.
Invention effect
If utilize adhesive tape for wafer processing of the present invention, the weight fraction due to (methyl) acrylic component in copolymer is more than 1% and less than 10%, and (methyl) the acrylic acid degree of neutralization in ionomer resin is more than 50%, thereby when picking up, can suppress fully semiconductor chip adhesion more each other, can further suppress dual chip and pick up wrong generation.
In addition, if utilize semiconductor processing method of the present invention, owing to using adhesive tape for wafer processing of the present invention, and in the operation of semiconductor wafer and cement layer being carried out to singualtion by the support base material of adhesive tape for wafer processing more than thickness direction cuts 10 μ m, thereby can further fully suppress semiconductor chip adhesion more each other when picking up, can further suppress dual chip and pick up wrong generation.
Accompanying drawing explanation
Fig. 1 is the sectional view of schematic formation that the diced chip adhesive band of embodiment of the present invention is shown.
Fig. 2 is that it is the figure of laminated semiconductor wafer on diced chip adhesive band for the figure of the schematic using method of diced chip adhesive band is described.
Fig. 3 is the figure for the subsequent handling of key diagram 2 (cutting action).
Fig. 4 is the figure for the subsequent handling of key diagram 3 (expansion process).
Fig. 5 is the figure of the subsequent handling (picking up operation) for key diagram 4.
Fig. 6 shoots the electron micrograph that the cutting swarf producing while cutting is blocked in the pattern between semiconductor chip.
Symbol description
1 semiconductor wafer
2 semiconductor chips
10 diced chip adhesive bands (adhesive tape for wafer processing)
11 release liners
12 cutting belt (adhesive tape)
12a supports base material
12b adhesive phase
13 cement layers
20 annular frames
21 slim grinding stones
22 absorptive tables
30 upper-top parts
31 poles (ピ Application)
32 suction jigs
Embodiment
Based on accompanying drawing, embodiments of the present invention are elaborated below.
In the present embodiment, exemplifying diced chip adhesive band describes as adhesive tape for wafer processing.
Fig. 1 is the sectional view that the diced chip adhesive band 10 of present embodiment is shown.
As shown in Figure 1, diced chip adhesive band 10 is lamination cement layers 13 and form in the cutting belt 12 as adhesive tape, and described adhesive tape consists of the adhesive phase 12b that supports base material 12a and form thereon.Shown in Figure 1, for cement layer 13 is protected, at diced chip adhesive band 10, be provided with the state of release liner 11.
In addition, adhesive phase 12b can consist of layer of adhesive layer, also can carry out lamination and the structure that obtains forms by two layers of above adhesive phase.
In addition, cutting belt 12 and cement layer 13 can be combined with operation or install and be cut in advance reservation shape (cutting in advance プ リ カ Star ト).
In addition, diced chip adhesive band 10 can be the form that each chip semiconductor wafer is cut off, and it also can be for by the form of a plurality of formed long sized sheets coiling tubulars.
(using method of diced chip adhesive band)
In the manufacturing process of semiconductor device, diced chip adhesive band 10 is used as follows.
The state of laminated semiconductor wafer 1 and annular frame 20 on diced chip adhesive band 10 has been shown in Fig. 2.
First, as shown in Figure 2, cutting belt 12 is pasted on to annular frame 20, semiconductor wafer 1 is conformed to cement layer 13.To their stickup order unrestricted, can after semiconductor wafer 1 is conformed to cement layer 13, cutting belt 12 be pasted on to annular frame 20, also can carry out the laminating of cutting belt 12 to the stickup of annular frame 20 and semiconductor wafer 1 to cement layer 13 simultaneously.
In addition, with the slim grinding stone 21 of High Rotation Speed, implement the cutting action (Fig. 3) of semiconductor wafer 1.Now, semiconductor wafer 1 is together cut and cut apart with cement layer 13 and adhesive phase 12b, and support base material 12a is carried out to 10 μ m～30 μ m cuttings at thickness direction.
In addition, the degree of depth that can extremely be stipulated by semiconductor wafer 1 surface cut by cutting at one time, also can be cut to prescribed depth by repeatedly cutting.
Specifically, in order to utilize 21 pairs of semiconductor wafers 1 of slim grinding stone and cement layer 13 to cut, by absorptive table 22, from cutting belt 12 sides, diced chip adhesive band 10 is adsorbed to supporting.
And the slim grinding stone 21 that utilizes High Rotation Speed is cut to semiconductor core blade unit by semiconductor wafer 1 and cement layer 13 and carries out singualtion.
In the situation that the adhesive phase 12b of cutting belt 12 has one deck or more than two layers structures, at least one deck is wherein formed by energy ray-curable adhesive, preferably after cutting action by by cutting belt 12 side (support base material 12a side) irradiation energy ray below, make adhesive phase 12b occur to solidify, reduce its bonding force.
In addition, in the situation that adhesive phase 12b consists of lamination two layers of above adhesive phase, also the one deck in can each adhesive phase or whole layers are formed by energy ray-curable adhesive, by energy-ray, irradiate and be cured, reduce the bonding force of this one deck in each adhesive phase or whole layer.
In addition, also can replace the irradiation of energy-ray, by outside stimuluss such as heating, reduce the bonding force of cutting belt 12.
As shown in Figure 4, by maintain through the semiconductor wafer 1 (be semiconductor chip 2) of cutting with through the cutting belt 12 of the cement layer 13 of cutting to annular frame 20 radially stretch implement expansion process thereafter.
Specifically, for the cutting belt 12 that maintains the state of a plurality of semiconductor chips 2 and cement layer 13, make upper-top part 30 side below cutting belt 12 of hollow cylindrical increase, radially the stretching to annular frame 20 by cutting belt 12.Thus, pass through expansion process, expanded semiconductor chip 2 interval each other, bonding (adhesion again) more each other of the semiconductor chip 2 due to the cutting swarf producing in cutting action is destroyed, and the dual chip that can prevent from picking up in operation picks up wrong generation.
After having implemented expansion process, as shown in Figure 5, under the state that is keeping cutting belt 12 expansions, implement the operation of picking up that semiconductor chip 2 is picked up.
Specifically, utilize pole 31 that semiconductor chip 2 side direction below cutting belt 12 is pushed up, utilize suction jig 32 from the upper face side absorption semiconductor chip 2 of cutting belt 12 simultaneously, thereby semiconductor chip 2 and cement layer 13 are together picked up.
Then, after having implemented to pick up operation, implement chip attach operation.
Specifically, utilize in picking up operation and semiconductor chip 2 picked cement layer 13 (adhesive film) together, semiconductor chip 2 is bonded to lead frame or base plate for packaging etc. and carries out lamination.
Below each constitutive requirements of the diced chip adhesive band 10 of present embodiment are elaborated.
(cement layer)
The layer that cement layer 13 forms for cement being carried out in advance to membranization, contain the compound that at least one has epoxy radicals, can contain as required known polyimide resin, polyamide, polyether resin, mylar, polyesterimide resin, phenoxy resin, polysulfone resin, polyphenylene sulfide, polyether ketone resin, chlorinated polypropylene, acrylic resin, polyurethane resin, epoxy resin, polyacrylamide resin, melmac etc. or the such macromolecule component of its mixture in addition; Inorganic filler; Or curing accelerator.In addition, in order to improve the bonding force to substrate or lead frame etc., can add silane coupling agent or titanium coupling agent as additive.
As the above-mentioned compound with epoxy radicals, as long as be cured, present bonding effect and be just not particularly limited, but preferably Yi Er functional group counts the epoxy resin of less than 500～5000 above.As such epoxy resin, can enumerate for example bisphenol A type epoxy resin, bisphenol f type epoxy resin, bisphenol-s epoxy resin, alicyclic epoxy resin, aliphat chain epoxy resin, novolac epoxy resin, cresol-novolac epoxy resin, bisphenol-A phenolic varnish type epoxy resin, the 2-glycidyl etherate of xenol, the 2-glycidyl etherate of naphthalene glycol, the 2-glycidyl etherate of phenol, the diglycidyl ether compound of alcohols and their alkyl substituent, halide, the two sense epoxy resin such as hydride, phenolic resin varnish type epoxy resin.In addition, also can apply polyfunctional epoxy resin or heterocycle and contain the common known materials such as epoxy resin.
These materials may be used singly or in combination of two or more.
Further, in the scope without detriment to characteristic, also can contain with the form of impurity epoxy resin composition in addition.
Thickness to cement layer 13 is not particularly limited, and is conventionally preferably 5～100 μ m left and right.
In addition, cement layer 13 can lamination on whole of cutting belt 12, also can lamination cut off in advance (cutting in advance) and become the adhesive film with the corresponding shape of fitted semiconductor wafer 1, form cement layer 13.In the situation that lamination is corresponding to the adhesive film of semiconductor wafer 1, as shown in Figure 2, in the part of laminated semiconductor wafer 1, there is cement layer 13, in the part of the incisory annular frame 20 of laminating, do not have cement layer 13 and only have cutting belt 12.In general, because cement layer 13 is difficult for peeling off mutually with adherend, thereby by using the adhesive film of cutting in advance, annular frame 20 and cutting belt 12 can be fitted, can obtain and while peeling off band after use, be difficult for the such effect of residual paste on annular frame 20 (sticking with paste residual り).
(cutting belt)
Cutting belt 12 is such bands: when cutting semiconductor chip 1, have and can not make semiconductor wafer 1 peel off so sufficient bonding force; When the semiconductor chip 2 to after cutting picks up, have and can easily from cement layer 13, peel off so low bonding force, as shown in Figure 1, it is the structure supporting to be provided with on base material 12a adhesive phase 12b.
The weight fraction of (methyl) acrylic component in copolymer is more than 1% and less than 10%, and the acrylic acid degree of neutralization in ionomer resin is more than 50%.
Herein, weight fraction for (methyl) acrylic component in copolymer, in the situation that support base material 12a to be formed by the ionomer resin that ethylene-acrylic acid bipolymer is formed by metal ion crosslinked, by it according to " the mMw in following structural formula 1
m/ (nMw
n+ mMw
m) " stipulate.
In addition, in the situation that support base material 12a to be formed by the ionomer resin that ethylene-methyl methacrylate bipolymer is formed by metal ion crosslinked, by it according to " the bMw in following structural formula 2
b/ (aMw
a+ bMw
b) " stipulate.
In addition, in the situation that support base material 12a to be formed by the ionomer resin that ethylene-acrylic acid-alkyl acrylate terpolymer is formed by metal ion crosslinked, by it according to " the mMw in following structural formula 3
m/ (nMw
n+ mMw
m+ lMw
1) " stipulate.
In addition, in the situation that support base material 12a to be formed by the ionomer resin that ethylene-methyl methacrylate-alkyl methacrylate terpolymer is formed by metal ion crosslinked, by it according to " the bMw in following structural formula 4
b/ (aMw
a+ bMw
b+ cMw
c) " stipulate.
In addition, for (methyl) the acrylic acid degree of neutralization in ionomer resin, the degree that (methyl) acrylic acid portion that is defined as ionomer resin carries out ionization (neutralization) with metal ion (for example, the will Vol.32 of Japan Rheology association, No.2,65-69,2004).In addition, m is the m (being acrylic acid number of repeat unit) in following structural formula 1 or following structural formula 3, and b is the b (being the number of repeat unit of methacrylic acid) in following structural formula 2 or following structural formula 4.
[formula 1]
[formula 2]
[formula 3]
[formula 4]
The kind of the metal ion of ionomer resin is not particularly limited, from the viewpoint of the preferred Zn ion of contaminative.
In addition, also can in ionomer resin, add as required antioxidant, antiblocking agent, levelling agent etc.
Support thickness the not specially provided for of base material 12a, even if there is not the aspect consideration of the intensity that ruptures while also thering is the expansion of cutting belt 12 from this supports base material 12a is cut when the cutting as far as possible, preferably there is thickness more than 60 μ m.
In addition, consider and when picking up, utilize pole 31 that semiconductor chip 2 side direction top below cutting belt 12, to promote the situation about peeling off of cement layer 13 and adhesive phase 12b, is preferably supported to the thickness of base material 12a is below 150 μ m from the aspect of rigidity of base material.
In addition, in order to prevent adhesive phase 12b and to support peeling off of base material 12a, can implement to the surface of the support base material 12a before lamination adhesive phase 12b that corona discharge or plasma irradiating, ultraviolet ray are irradiated, other activations.
In addition, below supporting base material 12a (face of a side contrary to the face that is formed with adhesive phase 12b), in order to prevent that diced chip adhesive band 10 from carrying out the adhesion of drum while being wound around, can be embodied in surface arrange tiny concavo-convex, give the so known coating process of slickness etc.
For composition of adhesive phase 12b etc., there is no special provision, so long as in cutting, time keep securely semiconductor wafer 1, when picking up easily with layer just can that cement layer 13 is peeled off mutually, but preferably have one deck or two layers of above structure, at least one deck is wherein formed by energy ray-curable adhesive.
In addition, the thickness of adhesive phase 12b is not particularly limited, and can suitably set, and is preferably 5～30 μ m.
As the adhesive that forms adhesive phase 12b, preferably at the known chlorinated polypropylene for adhesive, acrylic resin, mylar, polyurethane resin, epoxy resin, addition reaction-type organopolysiloxane is resin, Si acrylate resin, vinyl-vinyl acetate copolymer, ethylene-ethyl acrylate copolymer, ethylene-methyl acrylate copolymer, ethylene-acrylic acid copolymer, in the various elastomers such as polyisoprene or styrene-butadiene-copolymer or its hydride etc. or its mixture, suitably mixing radioactive ray polymerizable compound is prepared.In addition, also can add various surfactants or surperficial levelling agent.
As above-mentioned radioactive ray polymerizable compound, for example, use and can carry out having on the harmonic component compound in molecule with more than at least 2 optical polymerism carbon-to-carbon double bond of three-dimensional nettedization or substituting group by irradiation polymer or the oligomer of optical polymerism carbon-to-carbon double bond base.
Specifically, can apply trimethylolpropane triacrylate, pentaerythritol triacrylate, tetramethylol methane tetraacrylate, dipentaerythritol monohydroxy five acrylate, dipentaerythritol acrylate, 1,4-butanediol diacrylate, 1,6-hexanediyl ester, polyethyleneglycol diacrylate; Or oligoester acrylate etc.; Si acrylate etc.; The copolymer of acrylic acid or various esters of acrylic acids etc.
In addition, except acrylate based compound as described above, also can use urethane acrylate is oligomer.Urethane acrylate is that oligomer obtains as follows: make the polyol compounds such as polyester-type or polyether-type and multicomponent isocyanate compound (for example 2, 4-toluenediisocyanate, 2, 6-toluenediisocyanate, 1, 3-eylylene diisocyanate, 1, 4-eylylene diisocyanate, diphenyl methane 4, 4-vulcabond etc.) react and obtain terminal isocyanate carbamate prepolymer, make this terminal isocyanate carbamate prepolymer and there is the acrylate of hydroxyl or methacrylate (acrylic acid-2-hydroxyl ethyl ester for example, 2-hydroxyethyl methacry-late, 2-hydroxypropyl acrylate, methacrylic acid-2-hydroxypropyl acrylate, polyethylene glycol acrylate, polyethylene glycol methacrylate-styrene polymer etc.) react, thereby obtain urethane acrylate, it is oligomer.
In addition, as the adhesive that forms adhesive phase 12b, can be for being selected from two or more material being obtained by mixing of above-mentioned resin.
In addition, for the material of the above-mentioned adhesive of enumerating as the adhesive that forms adhesive phase 12b, from the viewpoint of being easy to carry out the peeling off of cement layer 13 of the epoxy radicals high with containing polarity, preferably in molecular structure, contain as much as possible the nonpolarity groups such as trifluoromethyl, dimetylsilyl, chain alkyl.
In addition, in forming the adhesive (resin) of adhesive phase 12b, except adhesive phase 12b irradiation radioactive ray being made to the curing radioactive ray polymerizable compound of this adhesive phase 12b, also can suitably mix acrylic adhesive, Photoepolymerizationinitiater initiater, curing agent etc. and be prepared.
In the situation that using Photoepolymerizationinitiater initiater, can use such as benzoin iso-propylether (イ ソ プ ロ ピ Le ベ Application ゾ イ Application エ mono-テ Le), benzoin isobutyl ether (イ ソ Block チ Le ベ Application ゾ イ Application エ mono-テ Le), benzophenone, michler's ketone, clopenthixal ketone, dodecyl thioxanthones, dimethyl thioxanthones, diethyl thioxanthone, benzoin dimethylether, Alpha-hydroxy cyclohexyl phenyl ketone, 2-hydroxymethyl phenyl-propane etc.
According to adhesive tape for wafer processing described above (diced chip adhesive band 10), the thermosetting cement layer 13 that on this adhesive phase 12b of the cutting belt 12 of the adhesive tape consisting of support base material 12a and adhesive phase 12b in conduct, lamination contains the compound with epoxy radicals forms, support base material 12a to be formed by the ionomer resin that ethene-(methyl) acrylic acid bipolymer or ethene-(methyl) acrylic acid-(methyl) alkyl acrylate terpolymer are formed by metal ion crosslinked, copolymer (bipolymer, the weight fraction of (methyl) acrylic component terpolymer) is more than 1% and less than 10%, and (methyl) the acrylic acid degree of neutralization in ionomer resin is more than 50%.
Thus, support base material 12a to there is even dilatancy, can make semiconductor chip 2 adhesion more each other that embrittlement partly occurs simultaneously, thereby semiconductor chip 2 adhesion more each other can fully suppress to pick up time, can further suppress dual chip and pick up wrong generation.
In addition, according to diced chip adhesive band 10 described above, because cement layer 13 contains the compound with epoxy radicals, thereby can utilize this cement layer 13 that semiconductor chip 3 is bonded on substrate securely.
In addition, according to diced chip adhesive band 10 described above, because adhesive phase 12b has one deck or two layers of above structure, at least one deck is wherein formed by energy ray-curable adhesive, thereby semiconductor chip 2 and the cement layer 13 of singualtion easily can be peeled off from the adhesive phase 12b surface of cutting belt 12.
In addition, according to the semiconductor processing method of employing diced chip adhesive band 10 described above, it has following operation: the operation that semiconductor wafer 1 is conformed to diced chip adhesive band 10; Next use 21 pairs of semiconductor wafers 1 of slim grinding stone of High Rotation Speed and cement layer 13 and the adhesive phase 12b of diced chip adhesive band 10 to cut, simultaneously to the support base material 12a of diced chip adhesive band 10 more than thickness direction cuts 10 μ m, semiconductor wafer 1 and cement layer 13 are carried out to the operation (cutting action) of singualtion; And next under the state of cutting belt 12 expansion of diced chip adhesive band 10 to blocks of operation of picking up together with the cement layer 13 of the semiconductor wafer 2 of singualtion (being semiconductor chip 1) and singualtion (expansion process and pick up operation).
Thereby, due to use diced chip adhesive band 10, simultaneously in cutting action by the support base material 12a of diced chip adhesive band 10 more than thickness direction cuts 10 μ m, thereby semiconductor chip 2 adhesion more each other can further suppress to pick up fully time, can further suppress dual chip and pick up wrong generation.
In addition, according to the semiconductor processing method of employing diced chip adhesive band 10 described above, support that the thickness of base material 12a is more than 60 μ m, in singualtion operation (cutting action), will support base material 12a at thickness direction cutting 10～30 μ m.
Thereby, owing to supporting the thickness of base material 12a to be more than 60 μ m, will to support base material 12a at thickness direction cutting 10～30 μ m in cutting action, even thereby have in expansion and support during cutting belt 12 base material 12a that the intensity of fracture does not occur yet, and semiconductor chip 2 adhesion more each other can roughly completely suppress to pick up time.
Embodiment
Below embodiments of the invention are described, but the present invention is not limited to these embodiment.
First make and support base material (base material film) A～K, while modulating adhesive composition, then supporting to be coated with modulated adhesive composition so that the dried thickness of adhesive composition is 20 μ m on base material, at 110 ℃, be dried 3 minutes, be produced on the adhesive sheet (cutting belt) of supporting to be formed with on base material adhesive phase.
Next, modulation binder compositions, modulated binder compositions is coated on the release liner being formed by polyethylene-terephthalate film of processing through the demoulding, so that dried thickness is 60 μ m, at 110 ℃, be dried 3 minutes, on release liner, make adhesive film (cement layer).
In addition, after prepared adhesive sheet and adhesive film are cut out as the shape shown in Fig. 1, at the adhesive phase side laminating adhesive film of adhesive sheet, make the sample of embodiment 1～5 and comparative example 1～6.
The modulator approach of manufacture method, adhesive composition and the binder compositions of supporting base material A～K is shown below.
(supporting the making of base material A)
The resin bead of the ethylene-methyl methacrylate bipolymer zinc ionomer that the weight fraction of methacrylic acid composition is 1%, the degree of neutralization of this methacrylic acid is 60% is carried out to melting at 140 ℃, use extruder to be shaped to the long size of thickness 100 μ m membranaceous, supported base material A.
(supporting the making of base material B)
The resin bead of the ethylene-methyl methacrylate bipolymer zinc ionomer that the weight fraction of methacrylic acid composition is 3%, the degree of neutralization of this methacrylic acid is 50% is carried out to melting at 140 ℃, use extruder to be shaped to the long size of thickness 100 μ m membranaceous, supported base material B.
(supporting the making of base material C)
The resin bead of the ethylene-methyl methacrylate bipolymer zinc ionomer that the weight fraction of methacrylic acid composition is 5%, the degree of neutralization of this methacrylic acid is 50% is carried out to melting at 140 ℃, use extruder to be shaped to the long size of thickness 100 μ m membranaceous, supported base material C.
(supporting the making of base material D)
The resin bead of the ethylene-methyl methacrylate bipolymer zinc ionomer that the weight fraction of methacrylic acid composition is 9%, the degree of neutralization of this methacrylic acid is 60% is carried out to melting at 140 ℃, use extruder to be shaped to the long size of thickness 100 μ m membranaceous, supported base material D.
(supporting the making of base material E)
The resin bead of ethylene-methyl methacrylate-butyl methacrylate terpolymer zinc ionomer that the weight fraction of methacrylic acid composition is 9%, the weight fraction of butyl methacrylate composition is 12%, the degree of neutralization of this methacrylic acid is 70% is carried out to melting at 140 ℃, use extruder to be shaped to the long size of thickness 100 μ m membranaceous, supported base material E.
(supporting the making of base material F)
The resin bead of the ethylene-methyl methacrylate bipolymer zinc ionomer that the weight fraction of methacrylic acid composition is 10%, the degree of neutralization of this methacrylic acid is 60% is carried out to melting at 140 ℃, use extruder to be shaped to the long size of thickness 100 μ m membranaceous, supported base material F.
(supporting the making of base material G)
The resin bead of the commercially available low density polyethylene (LDPE) that is 0% by the weight fraction of methacrylic acid composition (Petrothene 217: TOSOH Co., Ltd manufactures) is carried out melting at 140 ℃, use extruder to be shaped to the long size of thickness 100 μ m membranaceous, supported base material G.
(supporting the making of base material H)
The resin bead of the ethylene-methyl methacrylate bipolymer that the weight fraction of methacrylic acid composition is 5%, the degree of neutralization of this methacrylic acid is 0% is carried out to melting at 140 ℃, use extruder to be shaped to the long size of thickness 100 μ m membranaceous, supported base material H.
(supporting the making of base material I)
The resin bead of the ethylene-methyl methacrylate butyl methacrylate ternary polymerization that the weight fraction of methacrylic acid composition is 9%, the degree of neutralization of this methacrylic acid is 0% is carried out to melting at 140 ℃, use extruder to be shaped to the long size of thickness 100 μ m membranaceous, supported base material I.
(supporting the making of base material J)
The resin bead of the ethylene-methyl methacrylate bipolymer zinc ionomer that the weight fraction of methacrylic acid composition is 1%, the degree of neutralization of this methacrylic acid is 30% is carried out to melting at 140 ℃, use extruder to be shaped to the long size of thickness 100 μ m membranaceous, supported base material J.
(supporting the making of base material K)
The resin bead of the ethylene-methyl methacrylate bipolymer zinc ionomer that the weight fraction of methacrylic acid composition is 5%, the degree of neutralization of this methacrylic acid is 40% is carried out to melting at 140 ℃, use extruder to be shaped to the long size of thickness 100 μ m membranaceous, supported base material K.
(modulation of adhesive composition)
In n-butyl acrylate/2-hydroxyethyl methacrylate copolymer (mean molecule quantity 500,000, glass transition temperature-40 ℃), add 20 weight portion trimethylol-propane trimethacrylates many as curing agent as compound, the 7 weight portion polyisocyanate compound CORONETL (manufacture of Japanese polyurethane Co., Ltd., trade name) with radioactive solid voltinism carbon-to-carbon double bond, further add 5 weight portion Irgacure 184 (Japanese Ciba-Geigy Co., Ltd. manufactures, trade name) as Photoepolymerizationinitiater initiater, to obtain the adhesive composition of radiation-curable.
(modulation of binder compositions)
In 100 parts by weight of acrylic acid based copolymers (glycidyl acrylate based copolymer), add 100 weight portion cresol-novolac epoxy resins as the compound with epoxy radicals, further in 10 weight portion dimethylbenzene phenolic varnish type phenol resin, mix 2-phenylimidazole (5 weight portion) and dimethylphenylene diamine (0.5 weight portion) as epoxy hardener and to add average grain diameter be the nano silicon filler (60 weight portion) of 0.012 μ m, obtain binder compositions.
< embodiment 1>
The adhesive composition of supporting base material A to be coated with above-mentioned modulation is made to cutting belt, the binder compositions of the above-mentioned modulation of lamination in this cutting belt, the sample of making embodiment 1.
< embodiment 2>
The adhesive composition of supporting base material B to be coated with above-mentioned modulation is made to cutting belt, the binder compositions of the above-mentioned modulation of lamination in this cutting belt, the sample of making embodiment 2.
< embodiment 3>
The adhesive composition of supporting base material C to be coated with above-mentioned modulation is made to cutting belt, the binder compositions of the above-mentioned modulation of lamination in this cutting belt, the sample of making embodiment 3.
< embodiment 4>
The adhesive composition of supporting base material D to be coated with above-mentioned modulation is made to cutting belt, the binder compositions of the above-mentioned modulation of lamination in this cutting belt, the sample of making embodiment 4.
< embodiment 5>
The adhesive composition of supporting base material E to be coated with above-mentioned modulation is made to cutting belt, the binder compositions of the above-mentioned modulation of lamination in this cutting belt, the sample of making embodiment 5.
< comparative example 1>
The adhesive composition of supporting base material F to be coated with above-mentioned modulation is made to cutting belt, the binder compositions of the above-mentioned modulation of lamination in this cutting belt, the sample of comparison example 1.
< comparative example 2>
The adhesive composition of supporting base material G to be coated with above-mentioned modulation is made to cutting belt, the binder compositions of the above-mentioned modulation of lamination in this cutting belt, the sample of comparison example 2.
< comparative example 3>
The adhesive composition of supporting base material H to be coated with above-mentioned modulation is made to cutting belt, the binder compositions of the above-mentioned modulation of lamination in this cutting belt, the sample of comparison example 3.
< comparative example 4>
The adhesive composition of supporting base material I to be coated with above-mentioned modulation is made to cutting belt, the binder compositions of the above-mentioned modulation of lamination in this cutting belt, the sample of comparison example 4.
< comparative example 5>
The adhesive composition of supporting base material J to be coated with above-mentioned modulation is made to cutting belt, the binder compositions of the above-mentioned modulation of lamination in this cutting belt, the sample of comparison example 5.
< comparative example 6>
The adhesive composition of supporting base material K to be coated with above-mentioned modulation is made to cutting belt, the binder compositions of the above-mentioned modulation of lamination in this cutting belt, the sample of comparison example 6.
< evaluation method >
(picking up test)
At 70 ℃, to each sample heating coating thickness 50 μ m of embodiment 1～5 and comparative example 1～6, the silicon wafer of diameter 200mm, use cutter sweep (Disco DFD6340 processed) to be cut into the size of 5mm * 5mm.Now, the cement layer of diced chip adhesive band and adhesive phase are cut and cut apart, further according to the pattern of supporting base material to cut at thickness direction by the predetermined degree of depth (0 μ m, 10 μ m, 20 μ m) is adjusted device.
Next, use metal halide lamp to each sample irradiation 200mJ/cm through cutting
2ultraviolet ray.
Thereafter, for each sample, use pick device (Canon-Machinery CAP-300II processed), according to the method shown in Fig. 4, the cutting belt of each sample is being applied under the state of 5% expansion, each sample is carried out to 100 times and pick up test, wherein, situation about can pick up each semiconductor chip is counted as successfully blocks ofly.Be there is to the situation that adhesion again picks up in 2 above semiconductor chips and be counted as failure.
Its evaluation result is listed in table 1 and table 2.
Table 1
Table 2
As shown in Table 1, for weight fraction that meet to support (methyl) acrylic component in copolymer in base material, be that (methyl) acrylic acid degree of neutralization more than 1% and in less than 10% and ionomer resin is the sample of the embodiment 1～5 of more than 50% such condition, even if do not cut support base material, when picking up, also can fully suppress the generation of adhesion again; Further, if to supporting that base material cuts, the generation of the adhesion again in the time of can further suppressing to pick up.Especially, known in the situation that support base material is cut to 20 μ m to thickness direction, when picking up, can suppress the generation of adhesion more completely.
On the other hand, as shown in Table 2, for weight fraction that meet not support (methyl) acrylic component in copolymer in base material, be that (methyl) acrylic acid degree of neutralization more than 1% and in less than 10% and ionomer resin is the sample of the comparative example 1～6 of more than 50% such condition, do not cutting support base material in the situation that, in the situation that can support base material equal extent or its above ratio that adhesion again occurs with not cutting of the sample with embodiment 1～5 while picking up; Even to supporting that base material cuts, also there is adhesion again when picking up.
Known according to foregoing, if the weight fraction of (methyl) acrylic component in support base material in copolymer is more than 1% and less than 10%, and (methyl) the acrylic acid degree of neutralization in ionomer resin is more than 50%, can fully suppresses dual chip and pick up wrong generation.Known further, if will support base material more than thickness direction cuts 10 μ m, can further suppress dual chip and pick up wrong generation.
Claims (4)
1. an adhesive tape for wafer processing, it is for by the adhesive tape for wafer processing of thermosetting cement layer that contains the compound with epoxy radicals of having supported lamination on this adhesive phase of the adhesive tape that base material and adhesive phase form, and this adhesive tape for wafer processing is characterised in that:
Above-mentioned support base material consists of the ionomer resin that ethene-(methyl) acrylic acid bipolymer or ethene-(methyl) acrylic acid-(methyl) alkyl acrylate terpolymer are formed by metal ion crosslinked;
The weight fraction of above-mentioned (methyl) acrylic component in above-mentioned copolymer is more than 1% and less than 10%, and above-mentioned (methyl) the acrylic acid degree of neutralization in above-mentioned ionomer resin is more than 50%.
2. adhesive tape for wafer processing as claimed in claim 1, is characterized in that, described adhesive phase has one deck or two layers of above structure, and at least one deck is wherein formed by energy ray-curable adhesive.
3. a semiconductor processing method, it is characterised in that for right to use requires the semiconductor processing method of the adhesive tape for wafer processing described in 1 or 2, this semiconductor processing method, it possesses following operation:
Semiconductor wafer is conformed to the operation of described adhesive tape for wafer processing;
Next use the slim grinding stone of High Rotation Speed to cut described cement layer and the described adhesive phase of described semiconductor wafer and described adhesive tape for wafer processing, simultaneously to the described support base material of this adhesive tape for wafer processing more than thickness direction cuts 10 μ m, this semiconductor wafer and this cement layer are carried out to the operation of singualtion; And
Then, under the state of expanding at the above-mentioned adhesive tape of above-mentioned adhesive tape for wafer processing, the operation of picking up the above-mentioned semiconductor wafer of singualtion blocks ofly.
4. semiconductor processing method as claimed in claim 3, is characterized in that:
The thickness of described support base material is more than 60 μ m;
In described singualtion operation, described support base material is cut to 10～30 μ m at thickness direction.
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| JP2010-154459 | 2010-07-07 | ||
| JP2010154459 | 2010-07-07 | ||
| JP2011-127019 | 2011-06-07 | ||
| JP2011127019A JP5583080B2 (en) | 2010-07-07 | 2011-06-07 | Wafer processing tape and semiconductor processing method using the same |
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| JP5607847B1 (en) * | 2013-11-29 | 2014-10-15 | 古河電気工業株式会社 | Adhesive tape for semiconductor processing |
| WO2015132852A1 (en) * | 2014-03-03 | 2015-09-11 | 古河電気工業株式会社 | Adhesive tape for semiconductor processing |
| JP6490459B2 (en) * | 2015-03-13 | 2019-03-27 | 古河電気工業株式会社 | Wafer fixing tape, semiconductor wafer processing method, and semiconductor chip |
| WO2016195071A1 (en) * | 2015-06-05 | 2016-12-08 | リンテック株式会社 | Composite sheet for forming protective film |
| JP6422462B2 (en) * | 2016-03-31 | 2018-11-14 | 古河電気工業株式会社 | Electronic device packaging tape |
| CN108231651B (en) * | 2017-12-26 | 2020-02-21 | 厦门市三安光电科技有限公司 | Micro-component transfer device and transfer method |
| US11608453B2 (en) | 2018-01-25 | 2023-03-21 | Kulicke And Soffa Industries, Inc. | Bonding tools for bonding machines, bonding machines for bonding semiconductor elements, and related methods |
| JP6928183B2 (en) * | 2018-08-08 | 2021-09-01 | 三井・ダウポリケミカル株式会社 | Resin composition for dicing film base material, dicing film base material and dicing film |
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| CN101040023A (en) * | 2004-10-14 | 2007-09-19 | 日立化成工业株式会社 | Adhesive sheet and method for manufacturing the same, semiconductor device manufacturing method and semiconductor device |
| TWI298084B (en) * | 2004-03-15 | 2008-06-21 | Hitachi Chemical Co Ltd | Die-bond sheet for dicing |
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| JPH05320587A (en) * | 1992-03-18 | 1993-12-03 | Furukawa Electric Co Ltd:The | Adhesive tape for fixing semiconductor wafer |
| JP4676398B2 (en) * | 2006-07-26 | 2011-04-27 | 古河電気工業株式会社 | Dicing adhesive tape |
| KR101023841B1 (en) * | 2006-12-08 | 2011-03-22 | 주식회사 엘지화학 | Adheisive composition and dicing die bonding film using the same |
| JP4717085B2 (en) * | 2008-01-18 | 2011-07-06 | 日東電工株式会社 | Dicing die bond film |
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| TWI298084B (en) * | 2004-03-15 | 2008-06-21 | Hitachi Chemical Co Ltd | Die-bond sheet for dicing |
| CN101040023A (en) * | 2004-10-14 | 2007-09-19 | 日立化成工业株式会社 | Adhesive sheet and method for manufacturing the same, semiconductor device manufacturing method and semiconductor device |
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| JP特开2008-31213A 2008.02.14 |
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