KR101311647B1 - Wafer processing tape and method of processing semiconductor therewith - Google Patents

Abstract

The present invention provides a wafer processing tape capable of sufficiently suppressing re-adhesion of semiconductor chips at the time of pickup and a semiconductor processing method using the same.
Moreover, the thermosetting adhesive layer 13 containing the compound which has an epoxy group is laminated | stacked on the said adhesive layer 12b of the dicing tape 12 as an adhesive tape which consists of a support base material 12a and the adhesive layer 12b. In the dicing die-bonding tape 10 as a processed wafer processing tape, the support base material 12a is an ethylene- (meth) acrylic acid binary copolymer or an ethylene- (meth) acrylic acid- (meth) acrylic acid alkyl ester ternary air. It consists of ionomer resin which made the copolymer bridge | crosslinked with metal ion, The weight fraction of the (meth) acrylic acid component in a copolymer is 1% or more and less than 10%, The neutralization degree of (meth) acrylic acid in an ionomer resin is 50% or more, It is characterized by the above-mentioned. do.

Description

Tape for wafer processing and semiconductor processing method using the same {WAFER PROCESSING TAPE AND METHOD OF PROCESSING SEMICONDUCTOR THEREWITH}

BACKGROUND OF THE INVENTION Field of the Invention The present invention relates to a wafer processing tape used in a semiconductor device manufacturing process and a semiconductor processing method using the same. The present invention relates to a dicing die-bonding tape and a semiconductor processing method using the same, which are used in a die bonding step of picking up a stacked semiconductor wafer together with an adhesive layer separated by division and laminating it on a substrate.

As a tape for wafer processing used in the manufacturing process of a semiconductor device, a dicing die bonding tape in which a dicing tape (adhesive tape) and a thermosetting adhesive film containing an epoxy resin component is laminated is proposed (for example, , Following patent documents 1 to 3). These dicing die-bonding tapes can firmly adhere a semiconductor chip and a board | substrate by thermosetting by including the compound which has an epoxy group in an adhesive bond layer (adhesive film). Moreover, by making the adhesive layer of a dicing tape into an energy ray hardening type, the adhesive force of a dicing tape can be reduced by UV irradiation etc., the interface of an adhesive layer and an adhesive bond layer is easily peeled off, and it divides into a semiconductor chip by division. It is possible to pick up the ized semiconductor wafer on the dicing tape with the adhesive bond layer separated by division.

As described above, the dicing die bonding tape can reliably cut and separate the semiconductor wafer and the adhesive layer, and the performance of picking up one by one and providing the die bonding process with high yield is required. Adhesion is also required.

However, as described above, the dicing die bonding tape is a thin grindstone that rotates at a high speed, and when the adhesive layer is cut together with the semiconductor wafer, the adhesive layer, which may have been separated, is partially re-adhesified and a part of the semiconductor chip is picked up. Has a drawback that a so-called "double die error", which is provided to the die bonding step while being connected to an adjacent semiconductor chip, is deteriorated and the yield of the process is deteriorated.

In order to suppress the occurrence of "double die error", it is necessary to try to break up the rebonding by expanding the dicing tape to some extent to extend the interval between the semiconductor chips. Therefore, the support base material of a dicing tape requires uniform expandability, As such a dicing tape, a support base material is an ethylene- (meth) acrylic acid binary copolymer or ethylene- (meth) acrylic acid- (meth) acrylate Tapes made of an ester terpolymer or an ionomer resin chelate-crosslinked with metal ions have been proposed (for example, Patent Documents 4 to 8 below).

Japanese Patent Laid-Open No. 2002-226796 Japanese Patent Laid-Open No. 2005-303275 Japanese Patent Laid-Open No. 2006-299226 Japanese Patent Laid-Open No. 5-156219 Japanese Patent Laid-Open No. 5-211234 Japanese Patent Laid-Open No. 2000-345129 Japanese Patent Laid-Open No. 2003-158098 Japanese Patent Publication No. 2007-88240

However, even with such a dicing tape, the suppression effect of occurrence of a double die error is not necessarily sufficient, and there is a problem that a double die error sometimes occurs. Therefore, in order to further suppress the occurrence of a double die error, it is desired to sufficiently suppress rebonding of semiconductor chips at the time of pick-up.

This invention is made | formed in order to solve the said subject, and an object of this invention is to provide the wafer processing tape which can fully suppress rebonding of the semiconductor chips at the time of pick-up, and the semiconductor processing method using the same.

The invention described in claim 1

In the tape for wafer processing in which the thermosetting adhesive bond layer containing the compound which has an epoxy group was laminated | stacked on the said adhesive layer of the adhesive tape which consists of a support base material and an adhesive layer,

The supporting substrate is composed of an ionomer resin obtained by crosslinking an ethylene- (meth) acrylic acid binary copolymer or an ethylene- (meth) acrylic acid- (meth) acrylic acid alkylester terpolymer with metal ions,

The weight fraction of the (meth) acrylic acid component in the copolymer is 1% or more and less than 10%, and the degree of neutralization of the (meth) acrylic acid in the ionomer resin is 50% or more.

The invention according to claim 2 is the tape for wafer processing according to claim 1,

The pressure-sensitive adhesive layer has a structure of one layer or two or more layers, and at least one of them is formed of an energy ray-curable pressure-sensitive adhesive.

Invention of Claim 3 is a semiconductor processing method using the wafer processing tape of Claim 1 or 2,

Bonding a semiconductor wafer to the tape for wafer processing;

Subsequently, the adhesive substrate and the pressure-sensitive adhesive layer of the semiconductor wafer and the wafer processing tape are cut using a thin grinding wheel that rotates at a high speed, and the supporting substrate of the wafer processing tape is cut by 10 µm or more in the thickness direction. A process of individualizing the semiconductor wafer and the adhesive layer;

Subsequently, in the state where the adhesive tape of the wafer processing tape is expanded, the step of picking up the individualized semiconductor wafers one by one

.

Invention of Claim 4 is a semiconductor processing method of Claim 3,

The thickness of the said support base material is 60 micrometers or more,

In the said process of separating into pieces, the said support base material is cut | disconnected 10-30 micrometers in the thickness direction, It is characterized by the above-mentioned.

Below, the process which led to complete this invention is demonstrated.

In the dicing process using the thin grinding wheel which rotates at high speed, about the occurrence of what is called "double die error" in which the adhesive layer which was to be separated is partially rebonded, the inventors have found that the adhesive layer cut together with the semiconductor wafer It was found that the aggregate of cutting chips included was blocked between the adjacent semiconductor chips as shown in FIG. 6, causing readhesion of adjacent semiconductor chips.

Re-adhesion of adjacent semiconductor chips by cutting chips containing such an adhesive component extends the dicing tape (adhesive tape) in the pick-up process, thereby widening the distance between the semiconductor chips, which can destroy re-adhesion. In some cases. In order to increase the space | interval of all the semiconductor chips, a uniform expandability is calculated | required by the support base material of a dicing tape, As a material of such a support base material, an ethylene- (meth) acrylic acid binary copolymer or ethylene- (meth) acrylic acid- ( The ionomer resin which bridge | crosslinked the meth) acrylic-acid alkylester terpolymer or any one of them with metal ion is mentioned.

 However, when the readhesion is firm, in order to destroy all the readhesions, the uniformly expandable property of the supporting substrate is insufficient, and it is also necessary to embrittle the readhesion portion.

Except for the compound which has an epoxy group among the adhesive bond layers of a dicing die-bonding tape, when the adhesive performance by the thermosetting of the said adhesive bond layer falls, it originates in the adhesive component in the cutting waste which arises in a dicing process. The adhesive force is also lowered. As a result, the re-adhesion between adjacent semiconductor chips can also be embrittled to suppress the occurrence of a double die error. In such a case, the adhesive force of the adhesive layer to the semiconductor chip is lowered and the original performance is impaired. Throw it away.

Therefore, as a countermeasure against the occurrence of a double die error, a method such as embrittlement of rebonding of semiconductor chips with cutting chips containing an adhesive component is required without reducing the compound having an epoxy group included in the adhesive material layer.

MEANS TO SOLVE THE PROBLEM As a result of earnestly examining, in the ethylene- (meth) acrylic acid binary copolymer or ethylene- (meth) acrylic acid- (meth) acrylic-acid alkylester ternary copolymer used for the support base material of a dicing die bonding tape, It was found that the occurrence of a double die error can be suppressed by reducing the ratio of the meth) acrylic acid component to less than a predetermined amount and ionizing it with metal ions. The reaction between the carboxyl group of the (meth) acrylic acid component and the compound having an epoxy group in the adhesive layer is suppressed by suppressing the (meth) acrylic acid component of the ionomer resin used for the supporting base material, forming a stable complex with metal ions, and lowering the reaction activity. Since it can suppress, the adhesive force between the base material scrap component and the adhesive chip component in the cutting chips which generate | occur | produce in a dicing process can be reduced, and the adhesion part between the semiconductor chips by cutting chips can be embrittled.

While providing sufficient uniform expandability to the supporting substrate, the effect of suppressing the occurrence of double die error is that the weight fraction of the (meth) acrylic acid component in the copolymer (binary copolymer, ternary copolymer) is less than 10%, It is an ionomer resin whose neutralization degree of (meth) acrylic acid in an ionomer resin is 50% or more, More preferably, the ionomer whose weight fraction of (meth) acrylic acid component is 3% or more and 5% or less and the degree of neutralization of (meth) acryl is 50% or more. Resin.

If the weight fraction of the (meth) acrylic acid component in the copolymer in the support base material (ionomer resin) is 1% or more, uniform expandability can be expected from the support base material, and if it is 3% or more, uniform expandability of the support base material You can expect

The weight fraction of the (meth) acrylic acid component in the copolymer in the ionomer resin can be quantified by combining methods such as NMR and thermal decomposition GC-ms spectrum measurement.

For example, at the peak of the thermal decomposition GC-ms spectrum, the alkyl group in the alkylester domain of the ethylene- (meth) acrylic acid- (meth) acrylic acid alkylester terpolymer can be identified.

In addition, when ¹ H-NMR is used, the integral value of the peak of the hydrogen of the α-position hydrogen of the (meth) acrylic acid unit or the methyl group of the (meth) acrylic acid unit in the ionomer resin of the ethylene- (meth) acrylic acid binary copolymer It can quantify by comparing with the integral of the peak of hydrogen of an ethylene unit. When the peak derived from the methyl group of the (meth) acrylic acid unit and the peak derived from the ethylene terminal near the chemical shift or the ester terminal of the (meth) acrylic acid alkyl ester are partially overlapped and observed, the methyl group of the (meth) acrylic acid unit Since the peak originating in the peak appears more in the low-long side, the fraction of the (meth) acrylic acid component can be approximated by the low-long integration. Also about the ethylene- (meth) acrylic acid- (meth) acrylic acid alkyl ester ternary copolymer, by using ¹ H-NMR, α-position hydrogen or (meth) acrylic acid unit of (meth) acrylic acid and (meth) acrylic acid alkylester The sum of the fraction of (meth) acrylic acid and the fraction of (meth) acrylic acid alkyl ester can be quantified from the peak of hydrogen of the methyl group of, and the hydrogen which couple | bonded the fraction of the (meth) acrylic-acid alkylester unit with the 1-position carbon of an alkyl group Since the fraction of only the (meth) acrylic-acid alkylester can be quantified at the peak of, the weight fraction of (meth) acrylic acid can be calculated.

Moreover, by making the degree of neutralization of (meth) acrylic acid by metal ion into 50% or more, the (meth) acrylic acid component of ionomer resin is suppressed, a stable complex is formed by metal ion, and reaction activity is reduced and (meth) acrylic acid Since the reaction between the component carboxyl group and the compound having an epoxy group in the adhesive layer can be suppressed, the adhesive force between the base scrap component and the adhesive scrap component in the cutting chips generated in the dicing step is reduced, and the semiconductor chip by the cutting chips is reduced. The adhesion part between them can be embrittled. As a result, occurrence of a double die error can be suppressed accurately. The degree of neutralization of the (meth) acrylic acid can be quantified by various spectroscopic analyzes such as ICP emission spectrometry. For example, by ICP emission spectrometry, the identification of the metal ion species in the ionomer and the weight fraction thereof can be performed together. In addition, if the weight fraction of (meth) acrylic acid in the ionomer can be known by combining the above-described NMR and thermal decomposition GC-ms spectral measurement, the degree of neutralization can be quantified by combining with the information of the metal ion.

By applying such a supporting substrate to a wafer processing tape such as a dicing die bonding tape, the occurrence of a double die error can be suppressed, and in addition, as the depth of cut to the supporting substrate in the dicing step is deepened, The effect is greater. On the other hand, if the depth of cut to the supporting base material is made larger than necessary, there is a risk of breaking during tape expansion.

If the amount of depth cut into the supporting substrate is 10 µm or more in the thickness direction, the effect is sufficient to suppress the occurrence of a double die error, and the supporting substrate is cut to 30 µm or less in the thickness direction, and the thickness of the supporting substrate is 60. If it is micrometer or more, breaking of a support base material can be prevented.

 Further, the pressure-sensitive adhesive layer of the dicing die-bonding tape has a structure of one layer or two or more layers, and at least one layer of the dicing die bonding tape is formed of an energy ray-curable pressure-sensitive adhesive, thereby providing sufficient adhesive force to firmly hold the semiconductor wafer in the dicing step. In addition, after dicing, the adhesive force of the dicing tape can be effectively lowered by irradiating an energy ray, and the dicing tape is separated from the adhesive layer separated from the semiconductor chip without providing an excessive load on the semiconductor chip in the pick-up process. It becomes possible to peel easily from the adhesive layer surface of the.

According to the tape for wafer processing of this invention, since the weight fraction of the (meth) acrylic acid component in a copolymer is 1% or more and less than 10%, since the neutralization degree of (meth) acrylic acid in an ionomer resin is 50% or more, at the time of pickup Re-adhesion between semiconductor chips can be sufficiently suppressed, and further suppression of occurrence of a double die error can be achieved.

Moreover, according to the semiconductor processing method of this invention, since the support base material of a wafer processing tape is cut | disconnected 10 micrometers or more in the thickness direction in the process of using the tape for a wafer process of this invention to separate a semiconductor wafer and an adhesive bond layer, it picks up, Re-adhesion between semiconductor chips in the city can be more fully suppressed, and further suppression of occurrence of a double die error can be achieved.

BRIEF DESCRIPTION OF THE DRAWINGS It is sectional drawing which shows schematic structure of the dicing die bonding tape which concerns on embodiment of this invention.
FIG. 2 is a view for explaining a schematic method of using a dicing die bonding tape, and is a view in which a semiconductor wafer is bonded onto a dicing die bonding tape.
FIG. 3 is a view for explaining a subsequent step (dicing step) of FIG. 2.
FIG. 4 is a diagram for explaining a subsequent process (expand process) of FIG. 3.
FIG. 5 is a diagram for explaining a subsequent step (pickup step) of FIG. 4.
6 is an electron micrograph showing a state in which cutting chips generated during dicing are blocked between semiconductor chips.

EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described in detail based on drawing.

In this embodiment, a dicing die bonding tape is illustrated and demonstrated as a tape for a wafer process.

FIG. 1: is sectional drawing which shows the dicing die bonding tape 10 of this embodiment.

As shown in FIG. 1, as for the dicing die bonding tape 10, the adhesive bond layer 13 is laminated | stacked on the dicing tape 12 as an adhesive tape which consists of a support base material 12a and the adhesive layer 12b formed on it. It is composed. In FIG. 1, in order to protect the adhesive bond layer 13, the state in which the peeling liner 11 is provided in the dicing die bonding tape 10 is shown.

In addition, the adhesive layer 12b may be comprised by one adhesive layer, and may be comprised by laminating | stacking two or more adhesive layers.

In addition, the dicing tape 12 and the adhesive bond layer 13 may be cut | disconnected (precut) to a predetermined shape previously according to a use process or an apparatus.

In addition, the dicing die bonding tape 10 may be the form cut | disconnected for every one semiconductor wafer, and this may be the form which wound up the long sheet in which the multiple sheets were formed in roll shape.

(How to use dicing die bonding tape)

In the manufacturing process of a semiconductor device, the dicing die bonding tape 10 is used as follows.

2 shows a state in which the semiconductor wafer 1 and the ring frame 20 are bonded to the dicing die bonding tape 10.

First, as shown in FIG. 2, the dicing tape 12 is attached to the ring frame 20, and the semiconductor wafer 1 is bonded to the adhesive layer 13. There is no restriction | limiting in these attachment orders, The dicing tape 12 may be affixed to the ring frame 20 after bonding the semiconductor wafer 1 to the adhesive bond layer 13, and the ring of the dicing tape 12 may be The attachment to the frame 20 and the bonding of the semiconductor wafer 1 to the adhesive layer 13 may be performed at the same time.

And the dicing process of the semiconductor wafer 1 is performed using the thin grindstone 21 which rotates at high speed (FIG. 3). In that case, the adhesive bond layer 13 and the adhesive layer 12b are cut | disconnected with the semiconductor wafer 1, and the support base material 12a is cut | disconnected 10 micrometers-30 micrometers in the thickness direction.

Moreover, it may cut to the predetermined depth from the surface of the semiconductor wafer 1 by one cutting, and may cut to a predetermined depth by several times of cutting.

Specifically, in order to dice the semiconductor wafer 1 and the adhesive bond layer 13 by the thin grindstone 21, the dicing die bonding tape 10 is dicing tape ( 12) Suction support from the side.

The semiconductor wafer 1 and the adhesive layer 13 are cut into semiconductor chip units and separated into pieces by the thin grinding wheel 21 rotating at high speed.

In the case where the pressure-sensitive adhesive layer 12b of the dicing tape 12 has a structure of one layer or two or more layers, and at least one of them is formed of an energy ray-curable pressure-sensitive adhesive, the dicing tape 12 after the dicing step It is preferable to harden the adhesive layer 12b and to reduce the adhesive force by irradiating an energy ray from the lower surface side (support base material 12a side).

In addition, when the adhesive layer 12b is laminated | stacked and comprised by two or more adhesive layers, one layer or whole layer of each adhesive layer is formed with an energy-beam hardening-type adhesive, hardened by energy-beam irradiation, and each adhesive layer The adhesive force of the said one layer or whole layer can also be reduced.

In addition, instead of irradiation of energy rays, the adhesive force of the dicing tape 12 can also be reduced by external magnetic poles, such as heating.

4, the dicing tape 12 holding the diced semiconductor wafer 1 (that is, the semiconductor chip 2) and the diced adhesive layer 13 is ring frame 20. Expand process is carried out to stretch in the radial direction.

Specifically, with respect to the dicing tape 12 in a state where the plurality of semiconductor chips 2 and the adhesive layer 13 are held, the hollow cylindrical push-up member 30 has a lower surface of the dicing tape 12. It raises from the side and stretches the dicing tape 12 in the radial direction of the ring frame 20. As shown in FIG. As a result, the expansion step increases the space between the semiconductor chips 2, breaks the rebonding (re-adhesion) between the semiconductor chips 2 by the cutting chips generated in the dicing step, The occurrence of a double die error can be prevented.

After performing an expand process, as shown in FIG. 5, the pick-up process of picking up the semiconductor chip 2 is implemented as it is in the state which expanded the dicing tape 12. FIG.

Specifically, the semiconductor chip 2 is pushed up by the pins 31 on the lower surface side of the dicing tape 12, and the semiconductor chip 2 is formed by the suction jig 32 on the upper surface side of the dicing tape 12. ), The semiconductor chip 2 is picked up together with the adhesive layer 13.

And after performing a pick-up process, a die bonding process is performed.

Specifically, the semiconductor chip 2 is bonded to a lead frame, a package substrate, or the like by the adhesive layer 13 (adhesive film) picked up together with the semiconductor chip 2 in the pickup step, and laminated.

Hereinafter, each component of the dicing die bonding tape 10 of this embodiment is demonstrated in detail.

(Adhesive layer)

After the semiconductor wafer 1 or the like is bonded and diced, the adhesive layer 13 is peeled off from the dicing tape 12 and attached to the semiconductor chip 2 when the semiconductor chip 2 is picked up. It is used as an adhesive agent when fixing (2) to a board | substrate, a lead frame, etc. Therefore, the adhesive bond layer 13 has sufficient adhesive reliability in order to adhere | attach and fix the semiconductor chip 2 to a board | substrate, a lead frame, etc. in a die bonding process.

The adhesive layer 13 is formed by filming an adhesive in advance, and contains at least one compound having an epoxy group, and other known polyimide resins, polyamide resins, polyether resins, polyester resins, polyesters, etc. Such as a mid resin, a phenoxy resin, a polysulfone resin, a polyphenylene sulfide resin, a polyether ketone resin, a chlorinated polypropylene resin, an acrylic resin, a polyurethane resin, an epoxy resin, a polyacrylamide resin, a melamine resin, or a mixture thereof. It may contain a polymer component, an inorganic filler, or a curing accelerator. Moreover, in order to raise the adhesive force to a board | substrate, a lead frame, etc., you may add a silane coupling agent or a titanium coupling agent as an additive.

Although there will be no restriction | limiting in particular if it is a compound which has the said epoxy group, if it hardens | cures and shows an adhesive effect, Epoxy resin of 500-5000 or less is preferable in bifunctional group or more. Examples of such epoxy resins include bisphenol A type epoxy resins, bisphenol F type epoxy resins, bisphenol S type epoxy resins, alicyclic epoxy resins, aliphatic chain epoxy resins, phenol novolac type epoxy resins, cresol novolac type epoxy resins, Bisphenol A novolak type epoxy resin, diglycidyl etherate of biphenol, diglycidyl etherate of naphthalene diol, diglycidyl etherate of phenol, diglycidyl etherate of alcohol, and alkyl thereof Bifunctional epoxy resins, such as a substituent, a halide, and a hydrogenated substance, and a novolak-type epoxy resin are mentioned. Moreover, what is generally known, such as a polyfunctional epoxy resin and a heterocyclic containing epoxy resin, can also be applied.

These can be used individually or in combination of 2 or more types.

Moreover, components other than an epoxy resin may be contained as an impurity in the range which does not impair a characteristic.

Although the thickness in particular of the adhesive bond layer 13 is not restrict | limited, Usually, about 5-100 micrometers is preferable.

In addition, although the adhesive layer 13 may be laminated | stacked on the whole surface of the dicing tape 12, the adhesive bond layer is laminated | stacked by laminating | stacking (precut) the adhesive film cut | disconnected in the shape according to the semiconductor wafer 1 to be bonded previously. (13) can also be formed. When laminating | stacking the adhesive film which concerns on the semiconductor wafer 1, as shown in FIG. 2, the adhesive bond layer 13 exists in the part to which the semiconductor wafer 1 is bonded, and the ring frame 20 for dicing is bonded. There is no adhesive layer 13 in the part and only dicing tape 12 exists. In general, since the adhesive layer 13 is difficult to peel off the adherend, the ring frame 20 can be bonded to the dicing tape 12 by using a precut adhesive film, and at the time of peeling the tape after use The effect that it is difficult to generate | occur | produce adhesive residue to the ring frame 20 in the above is acquired.

(Dicing tape)

When dicing the semiconductor wafer 1, the dicing tape 12 has sufficient adhesive force so that the semiconductor wafer 1 does not peel off, and when picking up the semiconductor chip 2 after dicing, the adhesive layer ( It has low adhesive force so that it can peel from 13), and as shown in FIG. 1, the adhesive layer 12b is provided in the support base material 12a.

The support base material 12a consists of an ionomer resin which bridge | crosslinked the ethylene- (meth) acrylic acid binary copolymer or the ethylene- (meth) acrylic acid- (meth) acrylic-acid alkylester terpolymer by metal ion.

The weight fraction of the (meth) acrylic acid component in the copolymer is 1% or more and less than 10%, and the degree of neutralization of acrylic acid in the ionomer resin is 50% or more.

Here, the weight fraction of the (meth) acrylic acid component in the copolymer is " m · Mw _m / in Formula 1 " when the supporting base 12a is polarized to the ionomer resin crosslinked with the ethylene-acrylic acid binary copolymer from metal ions. (n · Mw _n + m · Mw _m ) ”.

Further, the supporting base material (12a) is an ethylene-methacrylic acid 2 won if the partial copolymer at a ionomer resin cross-linked in the metal ion, to "b and in the formula 2 Mw _b / (a and Mw _a + b and Mw _b ) ".

In addition, when the support base material 12a is polarized to the ionomer resin which bridge | crosslinked the ethylene-acrylic-acrylic-acid alkylester terpolymer by metal ion, "m.Mw _m /(n.Mw _n + m *) in following General formula (3). Mw _m + l · Mw _l ) ".

In addition, when the support base material 12a is polarized to the ionomer resin which bridge | crosslinked the ethylene-methacrylic acid-methacrylic-acid alkylester ternary copolymer from the metal ion, "b * Mw _b /(a.Mw) in following General formula (4). _a + b · Mw _b + c · Mw _c ) ".

In addition, the degree of neutralization of (meth) acrylic acid in the ionomer resin is defined as the degree of ionization (neutralization) by the (meth) acrylic acid addition metal ion of the ionomer resin (for example, the Japanese Rheological Journal Vol.32, No. 2, 65-69, 2004). In addition, m is m (namely, the repeating unit number of acrylic acid) in following formula (1) or (3), and b is b (namely, repeating unit number of methacrylic acid) in following formula (2) or following formula (4).

Although the kind of metal ion of ionomer resin is not specifically limited, Zn ion is preferable in view of contamination.

Moreover, antioxidant, anti blocking agent, leveling agent, etc. can also be added to ionomer resin as needed.

Although the thickness of the support base material 12a is not specifically defined, even when the said support base material 12a is cut | disconnected at the time of dicing, in order to have the strength which does not fracture | rupture at the time of expansion of the dicing tape 12, It is preferable to have thickness of 60 micrometers or more.

In addition, in consideration of the case where the semiconductor chip 2 is pushed up from the lower surface side of the dicing tape 12 to the pin 31 at the time of picking up to prompt peeling between the adhesive layer 13 and the pressure-sensitive adhesive layer 12b, As for the thickness of the support base material 12a, 150 micrometers or less are preferable from a viewpoint of base rigidity.

In addition, in order to prevent peeling of the adhesive layer 12b and the support base material 12a, with respect to the surface of the support base material 12a before laminating the adhesive layer 12b, corona discharge, plasma irradiation, ultraviolet irradiation, and others Activation processing can also be performed.

Moreover, in order to prevent the blocking at the time of winding the dicing die bonding tape 10 in roll shape, the lower surface (surface on the opposite side to the surface in which the adhesive layer 12b was formed) of the support base material 12a was applied to the surface. It is also possible to carry out a known coating method such as forming fine irregularities or imparting slipperiness.

The pressure-sensitive adhesive layer 12b firmly holds the semiconductor wafer 1 at the time of dicing, and easily peels off from the adhesive layer 13 at the time of picking up, but the composition and the like thereof are not particularly defined. It is preferable to have the above structure, and at least 1 layer is formed of an energy-beam hardening-type adhesive.

In addition, although the thickness of the adhesive layer 12b is not specifically limited, Although it can set suitably, 5-30 micrometers is preferable.

Examples of the pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12b include known chlorinated polypropylene resins, acrylic resins, polyester resins, polyurethane resins, epoxy resins, addition-reactive organopolysiloxane resins, silicone acrylate resins, and ethylene used in pressure-sensitive adhesives. -Radiation polymerization to various elastomers such as vinyl acetate copolymer, ethylene-ethyl acrylate copolymer, ethylene-methyl acrylate copolymer, ethylene-acrylic acid copolymer, polyisoprene, styrene-butadiene copolymer, hydrogenated products thereof, and mixtures thereof. It is preferable to mix | blend and prepare a sex compound suitably. In addition, various surfactants and surface leveling agents may be added.

As the radiation polymerizable compound, for example, a low-volume compound having at least two or more photopolymerizable carbon-carbon double bonds in a molecule that can be three-dimensionally networked by light irradiation, or a photopolymerizable carbon-carbon double bond group The polymer and oligomer which have a substituent are used.

Specifically, trimethylol propane triacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypenta acrylate, dipentaerythritol hexaacrylate, 1, 4-butylene glycol Copolymers of acrylic acid and various acrylic esters, such as diacrylate, 1,6 hexanediol diacrylate, polyethyleneglycol diacrylate, and oligoester acrylate, silicone acrylate, etc. are applicable.

In addition to the above acrylate compounds, urethane acrylate oligomers may also be used. The urethane acrylate oligomer is a polyol compound such as a polyester type or a polyether type, and a polyhydric isocyanate compound (for example, 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-size) Acrylate or methacrylate which has a hydroxyl group to the terminal isocyanate urethane prepolymer obtained by making silylene diisocyanate, 1, 4- xylylene diisocyanate, diphenylmethane 4, 4- diisocyanate etc. react (for example, 2-hydroxyethyl acrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl acrylate, 2-hydroxypropyl methacrylate, polyethylene glycol acrylate, polyethylene glycol methacrylate, etc.) It is obtained by making it react.

In addition, the adhesive which forms the adhesive layer 12b may be a mixture of 2 or more types chosen from said resin.

In addition, the material of the said adhesive which mentioned as an adhesive which forms the adhesive layer 12b contains an epoxy group with high polarity, and contains as many nonpolar groups as possible in a molecular structure, such as a trifluoromethyl group, a dimethylsilyl group, and a long-chain alkyl group. Since peeling with the adhesive bond layer 13 to contain is easy, it is preferable.

The pressure-sensitive adhesive (resin) forming the pressure-sensitive adhesive layer 12b includes an acrylic pressure-sensitive adhesive, a photopolymerization initiator, a curing agent, and the like, in addition to a radiation polymerizable compound that irradiates radiation to the pressure-sensitive adhesive layer 12b to cure the pressure-sensitive adhesive layer 12b. It can also mix suitably and manufacture.

When using a photoinitiator, for example, isopropyl benzoin ether, isobutyl benzoin ether, benzophenone, Michler's ketone, chloro thioxanthone, dodecyl thioxanthone, dimethyl thioxanthone, diethyl thioxanthone , Benzyl dimethyl ketal, α-hydroxycyclohexylphenyl ketone, 2-hydroxymethylphenyl propane and the like can be used.

According to the tape for wafer processing (dicing die bonding tape 10) demonstrated above, in the said adhesive layer 12b of the dicing tape 12 as an adhesive tape which consists of a support base material 12a and the adhesive layer 12b, The thermosetting adhesive layer 13 containing the compound which has an epoxy group is laminated | stacked, and the support base material 12a is an ethylene- (meth) acrylic acid binary copolymer or ethylene- (meth) acrylic acid- (meth) acrylic acid It consists of the ionomer resin which bridge | crosslinked the alkylester terpolymer by metal ion, and the weight fraction of the (meth) acrylic acid component in a copolymer binary copolymer and a terpolymer is 1% or more and less than 10%, and ionomer resin The neutralization degree of (meth) acrylic acid in it is 50% or more.

Therefore, while the support base material 12a has uniform expandability and the readhesion part of the semiconductor chips 2 can be embrittled, readhesion of the semiconductor chips 2 at the time of pick-up is fully suppressed. It is possible to further suppress the occurrence of the double die error.

Moreover, according to the dicing die bonding tape 10 demonstrated above, since the adhesive bond layer 13 contains the compound which has an epoxy group, the adhesive bond layer 13 adhere | attaches the semiconductor chip 3 firmly on a board | substrate. can do.

Moreover, according to the dicing die bonding tape 10 demonstrated above, since the adhesive layer 12b has a structure of one layer or two or more layers, at least 1 layer is formed of an energy-beam hardening-type adhesive, The adhesive layer 13 separated from 2) can be easily peeled from the pressure-sensitive adhesive layer 12b surface of the dicing tape 12.

Moreover, according to the semiconductor processing method using the dicing die bonding tape 10 demonstrated above, the process of joining the semiconductor wafer 1 to the dicing die bonding tape 10, and the thin grindstone which continues to rotate at high speed continuously The adhesive layer 13 and the adhesive layer 12b of the semiconductor wafer 1 and the dicing die bonding tape 10 are cut | disconnected using the 21, and support of the dicing die bonding tape 10 is carried out. The substrate 12a is cut in the thickness direction by 10 µm or more, and the semiconductor wafer 1 and the adhesive layer 13 are separated into pieces (dicing step), and then the dicing die bonding tape 10 In the state where the dicing tape 12 is expanded, the step of picking up the separated semiconductor wafer 2 (ie, the semiconductor chip 1) one by one together with the separated adhesive layer 13 (expand process and pickup) Process).

Therefore, while using the dicing die bonding tape 10 and in the dicing process, since the support base material 12a of the dicing die bonding tape 10 is cut | disconnected 10 micrometers or more in the thickness direction, at the time of pickup Re-adhesion of the semiconductor chips 2 in each other can be more fully suppressed, and further suppression of the occurrence of a double die error can be achieved.

Moreover, according to the semiconductor processing method using the dicing die bonding tape 10 demonstrated above, the thickness of the support base material 12a is 60 micrometers or more, and the support base material 12a is carried out in the process of dividing into pieces (dicing process). It is 10 to 30 micrometers cutting in thickness direction.

Therefore, since the thickness of the support base material 12a is 60 micrometers or more and the support base material 12a is cut | disconnected 10-30 micrometers in the thickness direction in a dicing process, even if the dicing tape 12 is expanded, the support base material 12a In addition to having the strength that does not break, re-adhesion of the semiconductor chips 2 at the time of pickup can be almost completely suppressed.

[Example]

Next, although the Example of this invention is described, this invention is not limited to these Examples.

First, after preparing support base materials (base film) A-K, and adjusting an adhesive composition, the adjusted adhesive composition is apply | coated so that the thickness after drying of an adhesive composition may be set to 20 micrometers on a support base material, 110 It dried at 3 degreeC and created the adhesive sheet (dicing tape) in which the adhesive layer was formed on the support base material.

Subsequently, the adhesive composition was adjusted, and the adjusted adhesive composition was apply | coated so that the thickness after drying might be 60 micrometers to the release liner which is polarized to the polyethylene-terephthalate film which carried out the adhesive composition release process, and it is 110 minutes at 110 degreeC. It dried and created the adhesive film (adhesive layer) on a peeling liner.

And after cutting the created adhesive sheet and adhesive film in the shape shown in FIG. 1, the adhesive film was bonded to the adhesive layer side of the adhesive sheet, and the sample of Examples 1-5 and Comparative Examples 1-6 was created.

The preparation method of the support base materials A-K, the adhesive composition, and the adjustment method of an adhesive composition were shown below.

(Making of support mention A)

The resin beads of the ethylene-methacrylic acid binary copolymer zinc ionomer having a weight fraction of methacrylic acid component of 1% and the degree of neutralization of the methacrylic acid are 60% were melted at 140 ° C., and the thickness was 100 μm using an extruder. It shape | molded in elongate film shape and the support base material A was obtained.

(Making of support mention B)

Melt the resin beads of the ethylene-methacrylic acid binary copolymer zinc ionomer having a weight fraction of methacrylic acid component of 3% and the degree of neutralization of the methacrylic acid at 50% at 140 ° C, using an extruder, and having a thickness of 100 µm. It shape | molded in elongate film shape and the support base material B was obtained.

(Making of support mention C)

The resin beads of the ethylene-methacrylic acid binary copolymer zinc ionomer having a weight fraction of methacrylic acid component of 5% and the degree of neutralization of the methacrylic acid are 50% were melted at 140 ° C., and the thickness was 100 μm using an extruder. It shape | molded in elongate film shape and the support base material C was obtained.

(Making of support mention D)

The resin beads of the ethylene-methacrylic acid binary copolymer zinc ionomer having a weight fraction of methacrylic acid component of 9% and the degree of neutralization of the methacrylic acid are 60% were melted at 140 ° C., and the thickness was 100 μm using an extruder. It shape | molded in elongate film shape and the support base material D was obtained.

(Making of support mention E)

Ethylene-methacrylic acid-methacrylic acid butyl ester terpolymer with 9% by weight of methacrylic acid component, 12% by weight of methacrylic acid butyl ester component and 70% neutralization degree of methacrylic acid The resin beads of the zinc ionomer were melted at 140 ° C, and molded into an elongated film having a thickness of 100 µm using an extruder to obtain a supporting base E.

(Making of support mention F)

The resin beads of the ethylene-methacrylic acid binary copolymer zinc ionomer having a weight fraction of methacrylic acid component of 10% and the degree of neutralization of the methacrylic acid are 60% were melted at 140 ° C., and the thickness was 100 μm using an extruder. It shape | molded in elongate film shape and the support base material F was obtained.

(Making of support mention G)

A commercially available low-density polyethylene (Petrosene 217: manufactured by Tosoh Corp.) having a weight fraction of methacrylic acid component is melted at 140 ° C and molded into an elongated film having a thickness of 100 µm using an extruder. The support base material G was obtained.

(Making of support mention H)

The resin beads of the ethylene-methacrylic acid binary copolymer having a weight fraction of methacrylic acid component of 5% and the degree of neutralization of methacrylic acid at 0% were melted at 140 ° C., and the length of 100 μm was long using an extruder. It shape | molded in film shape and the support base material H was obtained.

(Making of support mention I)

Melt the resin beads of ethylene-methacrylic acid methacrylic acid butyl ester terpolymer in which the weight fraction of methacrylic acid component is 9% and the neutralization degree of methacrylic acid is 0%, at 140 ° C., using an extruder It shape | molded in 100-micrometer long film shape, and obtained the support base material I.

(Making of support mention J)

The resin beads of the ethylene-methacrylic acid binary copolymer zinc ionomer having a weight fraction of methacrylic acid component of 1% and a neutralization degree of methacrylic acid of 30% were melted at 140 ° C., and the thickness was 100 μm using an extruder. It shape | molded in elongate film shape and the support base material J was obtained.

(Making of support mention K)

The resin beads of the ethylene-methacrylic acid binary copolymer zinc ionomer having a weight fraction of methacrylic acid component of 5% and the neutralization degree of methacrylic acid are 40% were melted at 140 ° C., and the thickness was 100 μm using an extruder. It shape | molded in elongate film shape and the support base material K was obtained.

(Adjustment of Adhesive Composition)

n-butylacrylate / 2-hydroxyethyl methacrylate copolymer (average molecular weight 500,000, glass transition temperature -40 ° C) as a compound having a radioactive curable carbon-carbon double bond 20 trimethylolpropane trimethacrylate 7 parts by weight of polyisocyanate compound colonate L (manufactured by Nippon Polyurethane Co., Ltd., brand name) as a curing agent, and 5 parts by weight of Irgacure 184 (manufactured by Nippon Shiva Co., Ltd. brand name) as a photopolymerization initiator And the radiation curable adhesive composition was obtained.

(Adjustment of Adhesive Composition)

100 parts by weight of a cresol novolak-type epoxy resin is added as a compound having an epoxy group to 100 parts by weight of an acrylic copolymer (glycidyl acrylate-based copolymer), and further 10 parts by weight of an xylene novolak-type phenol resin is epoxy. 5 weight part of 2-phenylimidazole and 0.5 weight part of xylenediamine were mix | blended as a hardening | curing agent, 60 weight part of nano silica fillers with an average particle diameter of 0.012 micrometer were added, and the adhesive composition was obtained.

≪ Example 1 >

The adjusted adhesive composition was apply | coated to the support base material A, the dicing tape was created, the adjusted adhesive composition was laminated | stacked on the said dicing tape, and the sample of Example 1 was created.

<Example 2>

The adjusted adhesive composition was apply | coated to the support base material B, the dicing tape was created, the adjusted adhesive composition was laminated | stacked on the said dicing tape, and the sample of Example 2 was created.

<Example 3>

The adjusted adhesive composition was apply | coated to the support base material C, the dicing tape was created, the adjusted adhesive composition was laminated | stacked on the said dicing tape, and the sample of Example 3 was created.

<Example 4>

The adjusted adhesive composition was apply | coated to the support base material D, the dicing tape was created, the adjusted adhesive composition was laminated | stacked on the said dicing tape, and the sample of Example 4 was created.

<Example 5>

The adjusted adhesive composition was apply | coated to the support base material E, the dicing tape was created, the adjusted adhesive composition was laminated | stacked on the said dicing tape, and the sample of Example 5 was created.

&Lt; Comparative Example 1 &

The adjusted adhesive composition was apply | coated to the support base material F, the dicing tape was created, the adjusted adhesive composition was laminated | stacked on the said dicing tape, and the sample of the comparative example 1 was created.

Comparative Example 2

The adjusted adhesive composition was apply | coated to the support base material G, the dicing tape was created, the adjusted adhesive composition was laminated | stacked on the said dicing tape, and the sample of the comparative example 2 was created.

&Lt; Comparative Example 3 &

The adjusted adhesive composition was apply | coated to the support base material H, the dicing tape was created, the adjusted adhesive composition was laminated | stacked on the said dicing tape, and the sample of the comparative example 3 was created.

&Lt; Comparative Example 4 &

The adjusted adhesive composition was apply | coated to the support base material I, the dicing tape was created, the adjusted adhesive composition was laminated | stacked on the said dicing tape, and the sample of the comparative example 4 was created.

&Lt; Comparative Example 5 &

The adjusted adhesive composition was apply | coated to the support base material J, the dicing tape was created, the adjusted adhesive composition was laminated | stacked on the said dicing tape, and the sample of the comparative example 5 was created.

&Lt; Comparative Example 6 >

The adjusted adhesive composition was apply | coated to the support base material K, the dicing tape was created, the adjusted adhesive composition was laminated | stacked on the said dicing tape, and the sample of the comparative example 6 was created.

<Evaluation method>

(Pickup exam)

A silicon wafer having a thickness of 50 μm and a diameter of 200 mm was heat-bonded at 70 ° C. to each sample of Examples 1 to 5 and Comparative Examples 1 to 6, and a die was cut into a size of 5 mm × 5 mm using a dicing apparatus (DFD6340 manufactured by Disco). Fresh. At that time, the apparatus was adjusted so that the adhesive layer and the adhesive layer of the dicing die bonding tape were cut | disconnected, and also the support base material was cut to predetermined depth (0 micrometer, 10 micrometers, 20 micrometers) in the thickness direction.

Subsequently, 200 mJ / cm <2> of ultraviolet-ray was irradiated to each dicing sample using the metal halide lamp.

Thereafter, for each sample, 100% was applied to each sample in a state in which 5% expansion was applied to the dicing tape of each sample by the method shown in FIG. 4 using a pickup device (Canon Machinery Co., Ltd. CAP-300II). The success of picking up each time and picking up the semiconductor chips individually one by one was described as success. Cases where two or more semiconductor chips were reattached and picked up were considered failures.

The results of its evaluation are shown in Tables 1 and 2 below.

From the result of Table 1, the weight fraction of the (meth) acrylic acid component in the copolymer in a support base material satisfy | fills the conditions that the neutralization degree of (meth) acrylic acid in an ionomer resin is 50% or more in 1% or more and less than 10%. In the samples of Examples 1 to 5 described above, even if the supporting substrate is not cut, the occurrence of re-adhesion at the time of pickup is sufficiently suppressed, and if the supporting substrate is cut, the occurrence of the re-adhesion at the time of pickup is further suppressed. I could see. In particular, when the support base material was cut in the thickness direction of 20 µm, it was found that the occurrence of re-adhesion at the time of pickup could be completely suppressed.

On the other hand, from the result of Table 2, the weight fraction of the (meth) acrylic acid component in the copolymer in a support base material is 1% or more and less than 10%, and the neutralization degree of (meth) acrylic acid in an ionomer resin is 50% or more. In the samples of Comparative Examples 1 to 6, which do not satisfy the conditions, when the support substrate is not cut, the picking at the time of picking up at the same or higher ratio than when the support substrate of the samples of Examples 1 to 5 is not cut. It was found that re-adhesion occurred and even when the supporting substrate was cut, re-adhesion occurred at the time of pick-up.

From the above, when the weight fraction of the (meth) acrylic acid component in the copolymer in the support base material is 1% or more and less than 10%, and the degree of neutralization of the (meth) acrylic acid in the ionomer resin is 50% or more, the occurrence of a double die error It turned out that it can fully suppress. Moreover, it turned out that when a support base material is cut 10 micrometers or more in the thickness direction, generation | occurrence | production of a double die error can be suppressed further.

1 semiconductor wafer
2 semiconductor chip
10 Dicing die bonding tape (wafer processing tape)
11 release liner
12 dicing tape (adhesive tape)
12a support base
12b adhesive layer
13 adhesive layer
20 ring frame
21 thin stone
22 adsorption stage
30 lifting members
31 pin
32 adsorption jig

Claims (4)

In the tape for wafer processing in which the thermosetting adhesive bond layer containing the compound which has an epoxy group was laminated | stacked on the said adhesive layer of the adhesive tape which consists of a support base material and an adhesive layer,
The supporting substrate is composed of an ionomer resin obtained by crosslinking an ethylene- (meth) acrylic acid binary copolymer or an ethylene- (meth) acrylic acid- (meth) acrylic acid alkylester terpolymer with metal ions,
The weight fraction of the (meth) acrylic acid component in the copolymer is 1% or more and less than 10%, and the degree of neutralization of the (meth) acrylic acid in the ionomer resin is 50% or more. The wafer processing tape according to claim 1, wherein the pressure-sensitive adhesive layer has a structure of one layer or two or more layers, and at least one layer thereof is formed of an energy ray-curable pressure-sensitive adhesive. In the semiconductor processing method using the tape for wafer processing of Claim 1 or 2,
Bonding a semiconductor wafer to the tape for wafer processing;
Subsequently, the adhesive substrate and the pressure-sensitive adhesive layer of the semiconductor wafer and the wafer processing tape are cut using a thin grinding wheel that rotates at a high speed, and the supporting substrate of the wafer processing tape is cut by 10 µm or more in the thickness direction. A process of separating the semiconductor wafer and the adhesive layer into pieces;
Subsequently, in the state where the adhesive tape of the wafer processing tape is expanded, the step of picking up the individualized semiconductor wafers one by one
It has a semiconductor processing method characterized by the above-mentioned. The thickness of the support base material is 60㎛ or more,
In the said process of separating into pieces, the said support base material is cut | disconnected 10-30 micrometers in the thickness direction, The semiconductor processing method characterized by the above-mentioned.

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