KR20080053038A - Adheisive composition and dicing die bonding film using the same - Google Patents

Abstract

An adhesive resin composition is provided to minimize voids generated during bonding to a semiconductor wafer at low temperature, and to prevent chips from flying away during a dicing process by maintaining high adhesiveness with the wafer. An adhesive resin composition includes (a) a thermoplastic resin having a molecular weight of 10,000 or greater, (b) an epoxy resin having a softening point of 85 °C or below, and (c) a coupling agent. The adhesive resin composition has a tack energy of the surface attached to a wafer of 1 g.mm or more at ambient temperature and 3 g.mm at 80 °C. A dicing die bonding film includes a dicing tape, and an adhesive film stacked on the dicing film, wherein the adhesive film comprises the adhesive resin composition.

Description

Adhesive resin composition and dicing die bonding film using the same {ADHEISIVE COMPOSITION AND DICING DIE BONDING FILM USING THE SAME}

1 is a cross-sectional view of the adhesive film according to an embodiment of the present invention.

2 is a cross-sectional view of a dicing die bonding film according to an embodiment of the present invention.

3 is a cross-sectional view of a semiconductor device according to an embodiment of the present invention.

* Description of the main symbols in the drawing

1 semiconductor chip

10 Base film of adhesive film 20 Adhesive layer of adhesive film

30 Adhesion layer of dicing die bonding film 40 Dicing die bonding film substrate

50 wiring board

The present invention relates to an adhesive resin composition applied to the manufacture of a semiconductor package, an adhesive film using the same, a method for manufacturing the same, a dicing die bonding film, and a semiconductor device, wherein the adhesive resin composition according to the present invention comprises a) a thermoplastic having a molecular weight of 10,000 or more. Suzy; b) epoxy resins having a softening point of 85 ° C. or lower; And c) a coupling agent, wherein the Tack energy of the surface attached to the wafer is 1 g · mm or more at room temperature and 3 g · mm or more at 80 ° C., so that the film can be attached to the wafer without voids at low temperatures, It is characterized by being able to prevent the chip from scattering during the dicing process with good adhesion.

Recently, MCP (Multi Chip Package) method of stacking a plurality of semiconductor chips on a semiconductor substrate has been adopted, starting with a flash memory mounted in a mobile phone or a mobile terminal. In the MCP method, a film-like adhesive is used instead of a conventional liquid epoxy paste in bonding a semiconductor chip and a semiconductor substrate (Japanese Patent Laid-Open No. 3-192178, 4-234472). Liquid epoxy paste is inexpensive, but it is impossible to solve the warpage of the chip in the die bonding process, it is difficult to control the flowability, the occurrence of abnormality during the wire bonding process, difficulty in controlling the thickness of the adhesive layer, void of the adhesive layer There was a problem such as the occurrence of.

On the other hand, the method of using the said film adhesive is a film single piece adhesion method and a wafer back surface adhesion method.

The film single-piece adhesive method is a post-process wire that cuts or punches an adhesive on a film, processes it into a single piece to fit a chip, adheres it to a semiconductor substrate, picks the chip from the wafer, and die-bonds it onto the wafer. A semiconductor device is obtained through a bonding and molding process (Japanese Patent Laid-Open No. 9-17810).

In the wafer backside bonding method, a film-like adhesive is attached to the backside of the wafer, and a dicing tape having an adhesive layer is further attached to the backside not adhered to the backside of the wafer, and the wafer is diced and separated into individual chips. The chips are picked up and die-bonded to the semiconductor substrate, followed by a wire bonding and molding process to obtain a semiconductor device. However, the wafer backside bonding method has problems such as difficulty in transferring thinned wafers, increasing processes, difficulty in adapting to various chip thicknesses and sizes, difficulty in thinning films, and lack of reliability of high-performance semiconductor devices.

In order to solve the said problem, the method of sticking the film which consists of one layer of an adhesive agent and an adhesive on the back surface of a wafer is proposed (Japanese Patent Laid-Open No. 2-32181, Japanese Patent Laid-Open No. 8-53655, Japanese Patent Laid-Open No. 10-8001). The method is possible at one time without going through the lamination process twice, and since there is a wafer ring for supporting the wafer, there is no problem in transferring the wafer. In addition, in the dicing die-bonding integrated film composed of the point-adhesive and the base material composed of the specific composition of the patent document, an ultraviolet curable pressure-sensitive adhesive and a thermosetting adhesive are mixed. Therefore, the pressure-sensitive adhesive serves to support the wafer in the dicing process, and loses the adhesive force after the ultraviolet curing process to facilitate the pickup of the chip from the wafer. Meanwhile, the adhesive may be hardened in the die bonding process to firmly bond the chip to the semiconductor substrate. However, the dicing die-bonded film has a problem in that the pressure-sensitive adhesive layer and the adhesive layer in the film react with each other from manufacture to use, so that the substrate and the chip are not easily peeled off in the process of picking up the semiconductor chip after dicing. .

In order to solve the problems of the integrated film as described above, a dicing die-bonding separated film having a pressure-sensitive adhesive and an adhesive separated from each other so as to be used as a dicing tape in a dicing process and used as an adhesive in a die bonding process has been proposed. . The dicing die-bonding type film may be easily separated from the adhesive and the adhesive by applying UV curing or heat after the dicing process, so that no problem occurs during the semiconductor chip pickup process, and the film thickness may be reduced during the die bonding process. It offers convenience. However, in the process of laminating the adhesive on the back side of the semiconductor wafer, a process of applying heat is added, unlike the conventional method of attaching the adhesive at room temperature, and the generation of voids is also occurring. In addition, there was a problem of warpage of the wafer due to the high temperature during heating, the difficulty of the progress of the post-process and the adhesive strength of the adhesive is weak, the chip flying in the dicing process, there was a problem in the semiconductor package reliability.

The present invention is to solve the above problems, an object of the present invention is to minimize the generation of voids when bonding at low temperature with the semiconductor wafer, and to maintain a high adhesion with the wafer adhesive resin that does not scatter chips in the dicing process It is to provide a composition.

Another object of the present invention is to provide an adhesive film including the adhesive resin composition as an adhesive layer and a method of manufacturing the same.

Still another object of the present invention is to provide a dicing die bonding film having excellent semiconductor package reliability including the adhesive film and the dicing tape.

Another object of the present invention is to provide a semiconductor wafer using a dicing die bonding film.

Still another object of the present invention is to provide a semiconductor device using the adhesive film.

The present invention a) a thermoplastic resin having a molecular weight of 10,000 or more;

b) epoxy resins having a softening point of 85 ° C. or lower; And

c) coupling agents

It includes, but the Tack energy of the surface attached to the wafer is at least 1 g · mm at room temperature, and relates to an adhesive resin composition, characterized in that at least 3 g · mm at 80 ℃.

In the adhesive film of this invention, the Tack energy at normal temperature of the surface which contact | connects a wafer is 1 g * mm or more, Preferably it is 1-2g * mm, More preferably, it is 1-2g * mm, It is 3 at 80 degreeC. g.mm or more, Preferably it is 3.0-10 g * mm, More preferably, it is 3.0-8 g * mm. If the Tack energy at room temperature is 1.0 or less, the fluidity of the film is lowered, adhesion with the wafer becomes uneven, voids are generated, and adhesive strength tends to be lowered. On the other hand, if the Tack energy at 80 ° C is 3.0 g · mm or less, bubbles are hard to come off during lamination, and voids are likely to occur. As described above, if the adhesive strength is lowered or voids are generated, chips may fly by dicing saws in the dicing process, or burrs may be left in the vicinity of the chips. Becomes

Hereinafter, each structural component of the resin composition of this invention is demonstrated in detail.

The a) thermoplastic resin used in the present invention is not particularly limited as long as it is a resin having thermoplasticity or a resin having a thermoplastic property in an uncured state and forming a crosslinked structure while curing.

i) a polymer compound having a glass transition temperature of -60 to 30 ° C and a weight average molecular weight of 10,000 to 1 million;

ii) a polymer resin having a glass transition temperature of 0 to 140 ° C. and a weight average molecular weight of 10,000 to 100,000; And

iii) rubbers having a weight average molecular weight of 10,000 or more

It is preferable to use one or more selected from the group consisting of a mixture of two or more.

Preferred thermoplastic resins usable in the present invention are i) polymer compounds having a glass transition temperature of -60 to 30 ° C and a weight average molecular weight of 10,000 to 1 million.

The glass transition temperature of the compound is -60 ~ 30 ℃, more preferably -40 ~ 20 ℃. If the glass transition temperature is less than -60 ° C, the adhesive force may increase, and handling and workability may decrease. If the glass transition temperature exceeds 30 ° C, the adhesive force at low temperature is lowered.

In addition, in consideration of adhesive strength and heat resistance, the weight average molecular weight of the compound is preferably 10,000 to 1 million, more preferably 100,000 to 800,000, and most preferably 300,000 to 750,000. If the weight average molecular weight is less than 10,000, the flexibility and strength of the film is lowered, the handleability is lowered, and flowability during circuit filling of the substrate for semiconductors cannot be controlled. When the weight average molecular weight exceeds 1 million, the effect of inhibiting flowability during die bonding is large, so that embedding into the base material having irregularities on the surface is lowered, thereby reducing the reliability and circuit filling property of the adhesive film.

The polymer compound i) is not particularly limited, but is preferably an acrylic copolymer including at least one monomer selected from the group consisting of acrylic acid ester, methacrylic acid ester, acrylonitrile and acrylamide. The monomer of the acrylic copolymer means acrylic acid and derivatives thereof, specifically, acrylic acid; Methacrylic acid; Acrylic esters having 1 to 9 carbon atoms of alkyl such as methyl acrylate or ethyl acrylate; Monomers such as methacrylic acid esters having 1 to 9 carbon atoms of alkyl, such as methyl methacrylate or ethyl methacrylate, acrylonitrile or acrylamide, and other copolymerizable monomers. In addition, the acrylic copolymer preferably includes at least one functional group selected from the group consisting of glycidyl group, hydroxyl group, carboxyl group, and nitrile group. Compounds having such functional groups include, for example, glycidyl acrylate or glycidyl methacrylate having a glycidyl group; Hydroxy methacrylate or hydroxy ethyl acrylate having a hydroxy group; Or carboxy methacrylate which has a carboxy group can be used.

Although the content of the functional group of the said acrylic copolymer is not specifically limited, It is preferable that it is 0.5-20 weight part with respect to 100 weight part of acrylic resin, and more preferable content is 5-15 weight part. If the content is less than 0.5 parts by weight, the adhesive strength cannot be secured. If the content is more than 20 parts by weight, the adhesive strength is strong, the workability is poor, and gelation cannot be prevented.

Preferred thermoplastic resins usable in the present invention are also ii) polymer resins having a glass transition temperature of 0 to 140 ° C and a weight average molecular weight of 10,000 to 100,000.

If the glass transition temperature is less than 0 ° C., the adhesive force is increased, and handling and workability are poor. If the glass transition temperature is higher than 140 ° C., the adhesion force is reduced at lamination to the wafer. In addition, when the weight average molecular weight is 10,000 or less, the film is inferior in flexibility and handleability. When the weight average molecular weight is 1 million or more, the flowability during die bonding is poor, and the embedding property to the substrate is lowered.

The polymer resin is polyester, polyesterimide, polyvinyl alcohol, polyvinyl butyral, polyvinyl chloride, polystyrene, polyamide, polysulfone, polyethersulfone, polyimide, phenoxy resin, polyvinyl ether, and polyethylene One or more selected from the group consisting of may be used without limitation, but phenoxy resins are preferred in view of compatibility with epoxy resins.

Preferred thermoplastic resins usable in the present invention are also iii) rubbers having a weight average molecular weight of 10,000 or more, preferably 10,000 to 1 million, more preferably 10,000 to 500,000.

When the weight average molecular weight of the rubber is less than 10,000, the flexibility is difficult to maintain the film shape, when the weight average molecular weight exceeds 1 million, the embedding is lowered, the adhesive strength is lowered.

The iii) rubber is not particularly limited, but at least one synthetic rubber selected from the group consisting of butadiene rubber (BR), acrylonitrile butadiene rubber (NBR), acrylic rubber (AR), and styrene butadiene rubber (SBR) is used. It is desirable to. In particular, acrylonitrile butadiene rubber (NBR) is more preferable in view of improving elastic modulus at low temperature and suppressing flowability during molding.

It is preferable that the weight average molecular weights of the said acrylonitrile butadiene rubber are 10,000-500,000, More preferably, it is 200,000-400,000. When the weight average molecular weight of the rubber is less than 10,000, it is difficult to maintain the film form. When the weight average molecular weight exceeds 500,000, the compatibility with the solution decreases and the elastic modulus is lowered, thereby excessively suppressing the flowability during molding.

In addition, the acrylonitrile butadiene rubber is an acrylonitrile content of 25 to 45 parts by weight, the remainder is preferably a butadiene copolymer. If the acrylonitrile content is less than 25 parts by weight, the adhesiveness is not sufficient. If the acrylonitrile content is more than 45 parts by weight, moldability such as coating property is lowered due to a decrease in compatibility with a solution and an increase in viscosity.

The b) epoxy resin used in the present invention is not particularly limited as long as it has a softening point of 85 ° C. or lower, preferably 50 to 85 ° C., and is cured to exhibit an adhesive action. If the softening point is less than 50 ° C., since the adhesive film has a tack at room temperature, the workability is degraded in the semiconductor process. If the softening point is more than 85 ° C., the adhesion property is degraded at the time of adhesion with the wafer, thereby causing voids.

Moreover, it is preferable to use the polyfunctional epoxy resin whose average epoxy equivalent 180-1000 is said epoxy resin. When the epoxy equivalent is less than 180, the crosslinking density is too high, so it is easy to exhibit hard properties, and when the epoxy equivalent exceeds 1000, the glass transition temperature may be lowered.

Examples of the epoxy resins usable in the present invention include cresol novolac epoxy resins, bisphenol A novolac epoxy resins, phenol novolac epoxy resins, tetrafunctional epoxy resins, biphenyl type epoxy resins, and triphenol methane type epoxys. A resin, an alkyl modified triphenol methane epoxy resin, a naphthalene type epoxy resin, a dicyclopentadiene type epoxy resin, a dicyclopentadiene modified phenol type epoxy resin, etc. are contained, These can be mixed and used 2 or more types.

As for content of the said epoxy resin, 10-200 weight part is preferable with respect to 100 weight part of thermoplastic resin, and 10-100 weight part is especially preferable. If it is less than 10 parts by weight, the heat resistance of the adhesive film is lowered. If it is more than 200 parts by weight, the elastic modulus of the film is excessively strong, and handleability and workability are deteriorated.

The c) coupling agent used in the present invention is not particularly limited in kind. The coupling agent can improve the adhesiveness between the resin, the wafer, and the resin and the silica filler interface. Coupling agent can improve adhesiveness and adhesiveness, without damaging the heat resistance of hardened | cured material by the organic functional group reacting with a resin component at the time of a hardening reaction, and also the heat-and-moisture resistance property is improved. The coupling agent may be one or more selected from the group consisting of a silane coupling agent, a titanium coupling agent, and an aluminum coupling agent, but a silane coupling agent is preferable in view of high cost-effectiveness.

The silane coupling agent, for example

Vinyl silanes such as vinylmethyldimethoxysilane, vinyltrichlorosilane, vinyltris (β-methoxyethoxy) silane, vinyltriethoxysilane, or vinyltrimethoxysilane;

methacryloxy silanes such as γ-methacryloxypropyl trimethoxysilane, 3-methacryloxypropyl-trimethoxysilane, or γ-methacryloxypropylmethyl dimethoxysilane;

epoxy silanes such as β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane;

glycidoxy silanes such as γ-glycidoxypropyl trimethoxysilane, γ-glycidoxypropylmethyl dimethoxysilane, or γ-glycidoxypropylmethyl diethoxysilane;

N-β- (aminoethyl) -γ-aminopropyl trimethoxysilane, N-β- (aminoethyl) -γ-aminopropylmethyl dimethoxysilane, γ-aminopropyl triethoxysilane, 3-aminopropylmethyl Diethoxysilane, 3-aminopropyl trimethoxysilane, 3-aminopropyl-tris (2-methoxy-ethoxy-ethoxy) silane, N-methyl-3-aminopropyl trimethoxysilane, triaminopropyl- Amino silanes such as trimethoxysilane, or N-phenyl- [gamma] -aminopropyl trimethoxysilane;

mercapto silanes such as γ-mercaptopropyl trimethoxysilane, 3-mercaptopropyl-methyldimethoxysilane, or γ-mercaptopropyl triethoxysilane; And

Ureido silanes such as 3-ureidopropyl triethoxysilane, or 3-ureidopropyl trimethoxysilane may be used, but are not limited thereto.

Although the usage-amount of a coupling agent is not specifically limited, 0.05-15 weight part is preferable with respect to 100 weight part of solid content resin components, and 0.1-10 weight part is especially preferable. If the amount is less than 0.01 part by weight, the adhesive effect is not sufficient, and if it exceeds 10 parts by weight, voids or unreacted coupling agents cause deterioration in heat resistance.

The resin adhesive composition according to the present invention may further include 40 to 150 parts by weight, preferably 50 to 90 parts by weight of a curing agent based on 100 parts by weight of the epoxy resin.

If the content is less than 40 parts by weight, the unreacted epoxy remains a lot lower the glass transition temperature, there is a problem that the high temperature or long time heat must be supplied for the reaction of the remaining epoxy groups, if the content exceeds 150 parts by weight crosslink density Is increased, but due to the unreacted hydroxyl group, the moisture absorption rate or dielectric properties may be increased, and storage stability may be lowered.

The type of the curing agent is not particularly limited, but at least one selected from the group consisting of phenolic compounds, aliphatic amines, cycloaliphatic amines, tertiary amines, imidazole compounds, dicyandiamide, and acid anhydrides. Can be used. Among them, a phenolic compound is preferable, and a polyfunctional phenol resin having two or more hydroxyl groups in particular and having a hydroxyl group equivalent of 100 to 1000 is advantageous in terms of heat resistance.

If the hydroxyl equivalent of the said phenol resin is less than 100, hardened | cured material hardness will be low and adhesive force will fall, and when it exceeds 1000, glass transition temperature will fall and heat resistance will become weak. Such polyfunctional phenol resins include bisphenol A resins, phenol novolac resins, cresol novolac resins, bisphenol A novolac resins, xylox resins, polyfunctional novolac resins, dicyclopentadiene phenol novolac resins, and amino triazines. If it is a phenol novolak resin, poly butadiene phenol novolak resin, biphenyl type resin, or other polyfunctional resin, all can be used, and these phenol resins may be used independently and may be used in mixture of 2 or more types.

The content of the multifunctional phenolic resin is preferably about 0.4 to 2.4 equivalents, more preferably 0.8 to 1.2 equivalents relative to the epoxy resin. If it is outside the above range, there is a disadvantage that unreacted epoxy or phenol remains and is volatilized at a high temperature reliability test to lower the reliability of the package.

In order to promote the curing reaction of the resin composition of the present invention, 0.1 to 10 parts by weight, more preferably 0.2 to 5 parts by weight of a curing accelerator, may be further included with respect to 100 parts by weight of the epoxy resin.

If the content of the curing accelerator is less than 0.1 part by weight, the crosslinking of the epoxy resin is insufficient and the heat resistance tends to be lowered. If the content of the curing accelerator exceeds 10 parts by weight, the curing reaction occurs rapidly, and the storage stability is lowered.

The curing accelerator is not particularly limited, and at least one selected from the group consisting of an imidazole compound, triphenylphosphine (TPP), and a tertiary amine may be used.

The imidazole compound is 2-methyl imidazole (2MZ), 2-ethyl-4-methyl imidazole (2E4MZ), 2-phenyl imidazole (2PZ), 1-cyanoethyl-2-phenyl imidazole (2PZ- CN), 2-undecyl imidazole (C11Z), 2-heptadecyl imidazole (C17Z), and at least one selected from the group consisting of 1-cyanoethyl-2-phenyl imidazole trimetalate (2PZ-CNS) Can be used.

Although the resin composition of this invention is not specifically limited, When considering handleability improvement, heat resistance improvement, melt viscosity adjustment, etc., it is 0.5-150 weight part with respect to 100 weight part of solid content resin, Preferably it is 5-100 weight part filler ( It is preferred to further include a filler).

If the content is less than 0.5 parts by weight, the effect of improving heat resistance and handleability due to the addition of the filler is not sufficient. If the content is more than 150 parts by weight, the effect of improving workability and adhesion is reduced.

Examples of the filler include organic fillers and inorganic fillers, and inorganic fillers are preferable in view of characteristics. As the inorganic filler, silica, aluminum hydroxide, calcium carbonate, magnesium hydroxide, aluminum oxide, talc, aluminum nitride and the like are preferable. In particular, spherical silica is particularly preferable in terms of good dispersibility in the resin composition and uniform adhesion in the film.

The average particle diameter of the filler is preferably 0.005 µm to 5 µm, and more preferably 0.01 µm to 1 µm. When the average particle diameter is less than 0.005 µm, fillers tend to aggregate in the adhesive film, and appearance defects occur. When larger than 5 micrometers, a filler may easily protrude to the surface in an adhesive film, it may damage a chip at the time of thermocompression bonding with a wafer, and the adhesiveness improvement effect may fall.

The present invention also provides a base film; And

It is related with the adhesive film formed on the said base film, and containing the adhesive layer containing the adhesive resin composition which concerns on this invention.

Referring to Figure 1 describes the adhesive film according to the present invention.

The base film 10 of the adhesive film according to the present invention is a polyethylene terephthalate film, polytetrafluoroethylene film, polyethylene film, polypropylene film, polybutene film, polybutadiene film, vinyl chloride copolymer film, or polyimide film Plastic films, such as these, can be used. Moreover, it is preferable to perform a mold release process on the surface of the said base film. Alkyl-based, silicone-based, fluorine-based, unsaturated ester-based, polyolefin-based, or waxy-based waxes are used as the release agent used for the surface release treatment. Especially, alkyd-based, silicone-based, or fluorine-based compounds are preferable because they have heat resistance.

The thickness of a base film is 10-500 micrometers normally, Preferably it is about 20-200 micrometers. If the thickness is less than 10 µm, the substrate is coated and stretched at the time of curing. If the thickness is more than 500 µm, the thickness is not economical.

The adhesive layer 20 of the adhesive film contains the adhesive resin composition according to the present invention to minimize the generation of voids when bonding to the semiconductor wafer at low temperatures, and to maintain high adhesion with the wafer to prevent scattering of chips in the dicing process Can be.

Although the thickness of the said contact bonding layer is not specifically limited, It is preferable that the thickness of the heat-hardened contact bonding layer is 5-200 micrometers, and it is more preferable that it is about 10-100 micrometers. If the thickness is less than 5 µm, the stress relaxation effect is insufficient at a high temperature, and if the thickness exceeds 200 µm, it is not economical.

In addition, the adhesive layer 20 may be formed on one surface of the base film 10 to form a two-layer structure of the base film-adhesive layer, or may form a three-layer structure of the adhesive layer-base film-adhesive layer or the base film-adhesive layer-base film. Of course it can.

The present invention also comprises the first step of producing a resin varnish by dissolving or dispersing the adhesive resin composition according to the invention in a solvent;

A second step of applying the resin varnish to the base film; And

A third step of removing the solvent by heating the base film coated with the resin varnish

It relates to a method for producing an adhesive film comprising a.

In the above, the first step is to prepare a resin varnish, considering the process time shortening and dispersibility,

Mixing a solvent, a filler and a coupling agent a);

B) adding and mixing an epoxy resin and a curing agent to the mixture of step a); And

Mixing the thermoplastic resin and the curing accelerator into the mixture of step b) c)

It is preferable to include.

The solvent for varnishing is typically methyl ethyl ketone (MEK), acetone, toluene, dimethyl formamide (DMF), methyl cellosolve (MCS), tetrahydrofuran (THF), or N Methylpyrrolidone (NMP) and the like can be used. Although it is preferable to use a low boiling point solvent in consideration of the heat resistance of a base film, a high boiling point solvent may be used in order to improve coating film property, and these solvents may be used in mixture of 2 or more types.

In addition, in order to improve the dispersibility in the adhesive film when the filler is used, a ball mill, bead mill, three rolls, or a high speed disperser may be used alone or in combination. Can also be used. Examples of the material of the balls and beads include glass, alumina, zirconium, and the like, and in terms of dispersibility of the particles, balls or beads made of zirconium are preferable.

The second step of the manufacturing method of the adhesive film according to the present invention is a step of applying the resin varnish to the base film.

The method of applying the resin varnish to the base film is not particularly limited. For example, the knife coat method, the roll coat method, the spray coat method, the gravure coat method, the curtain coat method, the comma coat method, the lip coat method, etc. can be used.

The third step of the manufacturing method of the adhesive film according to the present invention is a step of removing the solvent by heating the base film coated with the resin varnish. It is preferable that heating conditions at this time are about 5 to 20 minutes at 70-250 degreeC.

The invention also provides a dicing tape; And

It relates to a dicing die bonding film comprising the adhesive film according to the present invention laminated on the dicing tape.

The dicing die bonding film according to the present invention will be described with reference to FIG. 2.

The dicing tape is

Base film 40; And

It is preferable to include the adhesion layer 30 formed on the said base film.

Base film 40 of dicing tape is polyethylene film, polypropylene film, polytetrafluoroethylene film, polyethylene terephthalate film, polyurethane film, ethylene vinyl acetone film, ethylene-propylene copolymer film, ethylene-ethyl acrylate air A copolymer film, an ethylene-methyl acrylate copolymer film, or the like can be used, and if necessary, surface treatment such as primer coating, corona treatment, etching treatment or UV treatment may be performed. Moreover, when hardening an adhesive by ultraviolet irradiation, the thing with good light transmittance can be selected.

Although the thickness of the said dicing tape base material does not have a restriction | limiting in particular, Considering a handleability or a packaging process, 60-160 micrometers, Preferably 80-120 micrometers is good.

As the adhesive layer 30 of a dicing tape, a conventional ultraviolet curing adhesive or a thermosetting adhesive can be used. In the case of an ultraviolet curable adhesive, ultraviolet-ray is irradiated from the base material side, the cohesion force of an adhesive is raised and adhesive force is reduced, In the case of a thermosetting adhesive, temperature is added and a adhesive force is reduced.

As a method of manufacturing a dicing die bonding film according to the present invention as described above, a method of hot roll laminating and a laminating press of a dicing tape and an adhesive film may be used. This is preferred. Hot roll lamination conditions are preferably a pressure of 0.1 to 10 kg _f / cm ² at 10 to 100 ℃.

The present invention also relates to a semiconductor wafer in which the adhesive film of the dicing die bonding film according to the present invention is attached to one side of the wafer, and the dicing tape of the dicing die bonding film is fixed to the wafer ring frame. .

In the semiconductor wafer as described above, the adhesive film of the dicing die bonding film is attached to the back surface of the wafer at a lamination temperature of 0 to 180 ° C., and the dicing tape of the dicing die bonding film is fixed to the wafer ring frame. Can be prepared.

In addition, the present invention

Wiring board 50;

An adhesive layer 20 comprising an adhesive composition according to the present invention attached to a chip mounting surface of the wiring board; And

A semiconductor device comprising a semiconductor chip 1 mounted on the adhesive layer.

The manufacturing process of the semiconductor device will be described below.

The semiconductor wafer with the dicing die bonding film mentioned above is cut | disconnected completely using a dicing apparatus, and it divides into individual chips.

Subsequently, if the dicing tape is an ultraviolet curing adhesive, the substrate side is irradiated with ultraviolet rays to cure, and if it is a thermosetting adhesive, the temperature is raised to cure the adhesive. As mentioned above, the adhesive hardened | cured by ultraviolet-ray or heat falls, and the adhesive force of an adhesive falls and it becomes easy to pick up a chip in a post process. At this time, a dicing die bonding film can be stretched as needed. When such an expanding process is performed, the spacing between chips is determined to facilitate pick-up, and a misalignment occurs between the adhesive layer and the pressure-sensitive adhesive layer, thereby improving pickup performance.

Then, chip pick-up is performed. At this time, the adhesive layer of a semiconductor wafer and a dicing die bonding film peels from the adhesive layer of a dicing die bonding film, and the chip | tip with only an adhesive bond layer can be obtained. The obtained chip | tip with the said adhesive bond layer is affixed on the semiconductor substrate. The adhesion temperature of a chip is 100-180 degreeC normally, an adhesion time is 0.5-3 second, and an adhesion pressure is 0.5-2 kg _f / cm <^2> .

After the above process, a semiconductor device is obtained through a wire bonding and molding process.

The manufacturing method of a semiconductor device is not limited to the said process, Arbitrary process may be included and the order of a process may be changed. For example, the process may proceed to an ultraviolet curing-dicing-expanding process or a dicing-expanding-ultraviolet curing process. The chip attach process may further include a heating or cooling process.

The present invention will be described in more detail with reference to the following examples and comparative examples. However, an Example is for illustrating this invention and is not limited only to these.

Example 1

Acrylic-based thermoplastic resin was prepared by the following method. 30 parts by weight of butyl acrylate, 50 parts by weight of ethyl acrylate, 10 parts by weight of acrylonitrile, and 10 parts by weight of glycidyl methacrylate as a functional group-containing monomer are mixed with each other to adjust the reaction temperature and time. An acrylic resin having As a result, the weight average molecular weight of polymerized resin was 700,000, and Tg = 10 degreeC.

100 parts by weight of the acrylic resin prepared in the above manner with a thermoplastic resin, 25 parts by weight of YDCN-500-80P (Kukdo Chemical, cresol novolac-type epoxy resin, epoxy equivalent 205, softening point of 80 ° C.) as an epoxy resin, and a curing agent of an epoxy resin. 15 parts by weight of phenol resin KPH-F2001 (Kolon Emulsification, Phenol Novolac, Hydroxyl Equivalent 106, Softening Point 88 ° C), A-187 (GE Toshiba Silicone, γ-Glycidoxypropyltrimethoxysilane), a silane coupling agent 1 part by weight, 0.1 parts by weight of 2PZ (Shikoku Chemical, 2-phenyl imidazole) as a curing accelerator, and methyl ethyl ketone (MEK) in a composition consisting of 10 parts by weight of UFP-80 (denka, spherical silica, average particle diameter: 75 nm) as a filler. The mixture was stirred and mixed to prepare a varnish.

The said adhesive composition was apply | coated to the base film (SKC, RS-21G, silicone mold release PET film) of thickness 38micrometer, and it dried at 110 degreeC for 5 minutes, and produced the adhesive film whose coating film thickness is 20micrometer.

The adhesive film was laminated at 5 kg _f / cm ² with a dicing tape (Srion Tech 6360-00) at 30 ° C. using a laminator (Fujishoko Co., Ltd.) to obtain a dicing die bonding film for semiconductors.

Example 2

A resin was prepared in the same manner as in Example 1, except that YDCN-500-8P (softening point 70 ° C.) was used as the epoxy resin.

Example 3

Resin was prepared in the same manner as in Example 1 except that YDCN-500-1P (softening point 52 ° C.) was used as the epoxy resin.

Example 4

A resin was prepared in the same manner as in Example 3, except that a phenoxy resin YP-70 (donatability, molecular weight: 50,000 to 60,000) was added as the thermoplastic resin.

Example 5

Resin was prepared in the same manner as in Example 3 except that CTBN modified resin (Carboxyl terminated Butadiene Acrylo Nitrile Rubber) PNR-1 (JSR, molecular weight 400,000) was added as a thermoplastic resin.

Example 6

Resin was prepared in the same manner as in Example 3, except that NBR resin Nipol N20 (ZEON, molecular weight 5-60,000) was added as the thermoplastic resin.

A resin was prepared in the same manner as in Example 1, except that the composition and content were used in the following Table 1.

Example 7

Resin was prepared in the same manner as in Example 1, except that 10 parts by weight of the silane coupling agent A-187 was used.

Example 8

A resin was prepared in the same manner as in Example 1, except that 2 parts by weight of A-1160 (GE Toshiba Silicone, γ-ureidopropyltriethoxycysilane) was used as the silane coupling agent.

Example 9

A resin was prepared in the same manner as in Example 1, except that 2 parts by weight of A-2171 (GE Toshiba Silicone, Vinylmethyldimethoxysilane) was used as the silane coupling agent.

Comparative Example 1

A resin was prepared in the same manner as in Example 1, except that the epoxy resin YDCN-500-90P (Kukdo Chemical) having a softening point of 90 ° C. was used in Example 1 as shown in Table 1 below.

Comparative Example 2

Resin was prepared in the same manner as in Example 1, except that 0.01 parts by weight of the silane coupling agent was used in Example 1 as shown in Table 1 below.

Comparative Example 3

As shown in Table 1, a resin was prepared in the same manner as in Example 1 except for using a epoxy resin having a softening point of 90 ° C. in Example 1, except for the coupling agent.

Composition (parts by weight) Example 1 Example 2 Example 3 Example 4 Example 5 Example 6 Example 7 Example 8 Example 9 Comparative Example 1 Comparative Example 2 Comparative Example 3 Thermoplastic (molecular weight) 100 (700,000) 100 (700,000) 100 (700,000) 100 (5-6 only) 100 (400,000) 100 (100,000) 100 (700,000) 100 (700,000) 100 (700,000) 100 (700,000) 100 (700,000) 100 (700,000) Epoxy resin 25 25 25 25 25 25 25 25 25 25 25 25 KPH-F2001 15 15 15 15 15 15 15 15 15 15 15 15 2PZ 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 Coupling agent One One One One One One 10 2 2 One 0.01 0 UFP-80 10 10 10 10 10 10 10 10 10 10 10 10 Thermoplastic resin Self polymerization Self polymerization Self polymerization YP-70 PNR-1 N-20 Self polymerization Self polymerization Self polymerization Self polymerization Self polymerization Self polymerization Epoxy Softening Point (℃) 80 70 52 52 52 52 80 80 80 90 80 90 Coupling agent A187 A187 A187 A187 A187 A187 A187 A1160 A2171 A187 A187 x

Physical properties of the resin compositions of Examples 1 to 6 and Comparative Examples 1 to 3 were measured by the following methods, and the results are shown in Table 2 below.

[Evaluation method of film]

(1) back adhesion evaluation

The 8-inch silicon wafer was laminated for 10 seconds with a die bonding film in a tape mounter (DS hole) set at 40 ° C. Back adhesion was evaluated by the presence or absence of voids after lamination. Here, it was good that no void generate | occur | produced, and the thing which generate | occur | produced one or more was treated as bad.

(2) adhesion

The die bonding film was measured at 180 ° Peel using a 3M 1-inch tape at a peel rate of 5 mm / sec.

(3) Tack energy

Tack characteristics of the semi-cured film were 30 ° C. and 80 ° C. by using a ball probe, peel rate 1 mm / sec, contact load 800 g _f / cm 2, and contact time 0.01 sec using a TA.XT Plus tester manufactured by Stable Micro System. Tack energy was measured at ° C.

(4) landfill

PCB having a 10 μm height difference was used as the substrate. The die bonding film (20 um) was cut to 25 mm × 25 mm and laminated at 60 ° C. with the chip in a tape mounter (DS hole). The chip on which the PCB and die bonding are attached was pressed at 130 ° C. and 1.5 kg for 1 second. The fill rate was calculated by calculating the amount of film flowing and flowing between the circuit patterns of the PCB. If the purchase rate was 50% or more, the treatment was good.

(5) flowability

The die bonding film and the polyimide film (25 µm) were laminated at 60 ° C., cut to 25 mm × 25 mm, and sandwiched between two slide glasses (50 mm × 50 mm × 1 mm). The length of resin which flowed out after pressing for 120 second by the load of 200 kg at 180 degreeC using the thermocompression press (STN Corporation) was measured with the optical microscope, and this was made into the flow amount.

(6) remaining volatiles

After cutting the semi-cured film to 50 mm x 50 mm, the mass was measured (M1), and cured in an oven at 170 ° C. for 2 hours, and then the mass was measured (M2). The remaining volatile matter was calculated by the following formula.

Residual Volatility (%) = (M1-M2) X100 / M1

(7) water absorption

The mass of the cured film was measured (A), and the mass was measured after treatment in a constant temperature and humidity chamber at 85 ° C. and 85% for 24 hours (B). Absorption rate was calculated by the following formula.

% Absorption = (B-A) X 100 / A

(8) modulus of elasticity

The tensile modulus was measured by curing a die-bonding film having a length of 20 mm (L) and a thickness of 20 μm at 170 ° C. for 2 hours, and putting the cured film into an oven under a constant load (W) to raise the temperature to a temperature at which elastic modulus was to be measured. It was. The elongated length (ΔL) and the cross-sectional area (S) of the cured film were calculated and the tensile modulus was calculated by the following equation.

Tensile Modulus = [W / S] / [△ L / L]

(9) Chip scattering during dicing

A 125-micrometer-thick mirror wafer having a backside polished silicon wafer having a circuit pattern of 8 inches in diameter was used. The chip scattering was evaluated by laminating the wafer at 60 ° C. with a tape mounter and dicing 10 mm × 10 mm under the following conditions. Good chips were not scattered, and one or more chips were treated as bad.

Dicing device Neon Tech Manufacture Neon-8010 Dicing speed 10 mm / sec Revolutions 30,000 rpm Cut depth 70um

(10) moisture resistance

The film adhered to the wafer was treated at 121 ° C., 100% humidity, and 2 atmospheres of pressure (PCT, Pressure Cooker Test) after 72 hours to observe the presence or absence of peeling, and the peeling was good.

(11) package reliability

After bonding the chip to the PCB substrate with a die-bonding film, the cycle of the temperature resistant sample was left for 15 minutes at -55 ° C, and the process for 5 minutes was conducted at a temperature of 125 ° C for 15 minutes. After leaving the sample at 85% for 72 hours, the sample was passed through an IR reflow instrument having a temperature set so that the maximum temperature of the sample surface was maintained at 260 ° C. for 20 seconds, and the sample was allowed to stand at room temperature and cooled three times. The crack in it was observed with the ultrasonic microscope. The failure that peeling, cracking, etc. did not generate | occur | produce, and the thing which generate | occur | produced one or more was treated as defect.

Evaluation item Example 1 Example 2 Example 3 Example 4 Example 5 Example 6 Example 7 Example 8 Example 9 Comparative Example 1 Comparative Example 2 Comparative Example 3 Backside adhesion Good Good Good Good Good Good Good Good Good Bad Bad Bad Adhesive force (g / 25㎜) 52 55 60 62 58 60 50 55 60 45 38 35 Tack E (30 ℃) 1.4 1.5 1.6 1.3 1.3 1.2 1.8 1.7 1.5 0.7 0.8 0.65 Tack E (80 ℃) 6.0 6.1 7.2 3.6 3.8 3.7 10.5 8.9 6.9 2.7 2.4 2.0 Landfill Good Good Good Good Good Good Good Good Good Bad Good Bad Flowability (mm) 0.76 0.80 0.83 0.79 0.72 0.81 0.77 0.80 0.85 0.60 0.77 0.61 Residual Volatility (%) 2.36 2.43 2.33 2.13 2.11 2.07 2.50 2.41 2.22 2.22 2.33 2.30 Absorption rate (%) 1.34 1.20 1.14 1.28 1.36 1.19 1.35 1.45 1.20 1.20 1.30 1.30 Modulus of elasticity (MPa) 3.3 3.2 3.1 2.6 2.5 2.7 4.4 3.0 3.4 3.0 3.1 2.8 Chip scattering Good Good Good Good Good Good Good Good Good Bad Bad Bad Moisture resistance Good Good Good Good Good Good Good Good Good Good Bad Bad Package Reliability Good Good Good Good Good Good Good Good Good Bad Bad Bad

As shown in Table 2, compared to Comparative Examples 1 to 3, the film of the resin compositions of Examples 1 to 9 prepared according to the present invention exhibited adhesiveness, moisture resistance, package reliability, including back adhesion and chip scattering. All were excellent.

In particular, in the case of Comparative Example 1 using a softening point of 90 ℃ was low adhesive strength and embedding, in the case of Comparative Example 2 having a small content of the coupling agent and Comparative Example 3 without using the coupling agent it can be confirmed that the moisture resistance is lowered there was.

The adhesive film for semiconductors according to the present invention can be laminated on the wafer at a low temperature without voids, exhibits excellent adhesion with the wafer, and can reduce the defect rate of the process because there is no scattering of chips during dicing.

Moreover, the adhesive film of this invention can manufacture the semiconductor device which was excellent in the adhesive reliability between a chip | tip and a board | substrate, and excellent in the reliability which has heat resistance and moisture resistance.

Claims (38)

a) a thermoplastic resin having a molecular weight of 10,000 or more; b) epoxy resins having a softening point of 85 ° C. or lower; And c) coupling agents Including, but the adhesive resin composition, characterized in that the Tack energy of the surface attached to the wafer is 1 g · mm or more at room temperature, 3 g · mm or more at 80 ℃. The method of claim 1, wherein a) the thermoplastic resin i) a polymer compound having a glass transition temperature of -60 to 30 ° C and a weight average molecular weight of 10,000 to 1 million; ii) a polymer resin having a glass transition temperature of 0 to 140 ° C. and a weight average molecular weight of 10,000 to 100,000; And iii) rubbers having a weight average molecular weight of 10,000 or more Adhesive resin composition, characterized in that at least one selected from the group consisting of. The adhesive according to claim 2, wherein i) the polymer compound is an acrylic copolymer comprising at least one monomer selected from the group consisting of acrylic acid, methacrylic acid, acrylic acid ester, methacrylic acid ester, acrylonitrile and acrylamide. Resin composition. 4. The adhesive resin composition according to claim 3, wherein the acrylic copolymer includes at least one functional group selected from the group consisting of glycidyl group, hydroxyl group, carboxyl group and nitrile group. The adhesive resin composition according to claim 4, wherein the content of the functional group of the acrylic copolymer is 0.5 to 20 parts by weight based on 100 parts by weight of the acrylic resin. The polymer resin according to claim 2, wherein the polymer resin is polyester, polyesterimide, polyvinyl alcohol, polyvinyl butyral, polyvinyl chloride, polystyrene, polyamide, polysulfone, polyethersulfone, polyimide, phenoxy resin, Adhesive resin composition, characterized in that at least one selected from the group consisting of polyvinyl ether, and polyethylene. 3. The adhesive according to claim 2, wherein iii) the rubber is at least one selected from the group consisting of butadiene rubber (BR), acrylonitrile butadiene rubber (NBR), acrylic rubber (AR), and styrene butadiene rubber (SBR). Resin composition. 8. The adhesive resin composition according to claim 7, wherein the acrylonitrile butadiene rubber (NBR) has a weight average molecular weight of 10,000 to 500,000, and an acrylonitrile content of 25 to 45 parts by weight. The adhesive resin composition according to claim 1, wherein b) the epoxy resin is a polyfunctional epoxy resin having an average epoxy equivalent of 180 to 1000. B) epoxy resin, cresol novolac epoxy resin, bisphenol A novolac epoxy resin, phenol novolac epoxy resin, tetrafunctional epoxy resin, biphenyl type epoxy resin, triphenol methane type epoxy resin, Adhesive modified resin composition, characterized in that at least one selected from the group consisting of alkyl modified triphenol methane epoxy resin, naphthalene type epoxy resin, dicyclopentadiene type epoxy resin, and dicyclopentadiene modified phenol type epoxy resin. The adhesive resin composition of claim 1, wherein the content of the epoxy resin is 10 to 200 parts by weight based on 100 parts by weight of the thermoplastic resin. The adhesive resin composition according to claim 1, wherein c) the coupling agent is at least one selected from the group consisting of a silane coupling agent, a titanium coupling agent, and an aluminum coupling agent. 13. The adhesive according to claim 12, wherein the silane coupling agent is at least one selected from the group consisting of vinyl silane, methacryloxy silane, epoxy silane, glycidoxy silane, amino silane, mercapto silane, and ureido silane. Resin composition. The adhesive resin composition according to claim 1, wherein the content of the silane coupling agent is 0.05 to 15 parts by weight based on 100 parts by weight of the solid resin. The adhesive resin composition according to claim 1, further comprising 40 to 150 parts by weight of a curing agent based on 100 parts by weight of the epoxy resin. The adhesive of claim 15, wherein the curing agent is at least one selected from the group consisting of phenolic compounds, aliphatic amines, cycloaliphatic amines, tertiary amines, imidazole compounds, dicyandiamide, and acid anhydrides. Resin composition. The adhesive resin composition according to claim 16, wherein the phenol-based compound is a polyfunctional phenol resin having two or more hydroxyl groups and having a hydroxyl equivalent of 100 to 1000. 18. The adhesive resin composition according to claim 17, wherein the content of the polyfunctional phenol resin is 0.4 to 2.4 equivalents based on the epoxy resin. The adhesive resin composition according to claim 1, further comprising 0.1 to 10 parts by weight of a curing accelerator based on 100 parts by weight of the epoxy resin. The adhesive resin composition according to claim 19, wherein the curing accelerator is at least one selected from the group consisting of an imidazole compound, triphenylphosphine (TPP), and a tertiary amine. The method of claim 20, wherein the imidazole compound is 2-methyl imidazole (2MZ), 2-ethyl-4-methyl imidazole (2E4MZ), 2-phenyl imidazole (2PZ), 1-cyanoethyl-2-phenyl Consisting of imidazole (2PZ-CN), 2-undecyl imidazole (C11Z), 2-heptadecyl imidazole (C17Z), and 1-cyanoethyl-2-phenyl imidazole trimetalate (2PZ-CNS) Adhesive resin composition, characterized in that at least one selected from the group. The adhesive resin composition according to claim 1, further comprising 0.5 to 150 parts by weight of a filler based on 100 parts by weight of the solid resin. 23. The adhesive resin composition according to claim 22, wherein the filler is at least one selected from the group consisting of silica, aluminum hydroxide, calcium carbonate, magnesium hydroxide, aluminum oxide, talc, and aluminum nitride. The adhesive resin composition according to claim 22, wherein the average particle diameter of the filler is 0.005 µm to 5 µm. Base film; And The adhesive layer formed on the said base film and containing the adhesive resin composition of Claim 1 Adhesive film comprising a. The method of claim 25, wherein the base film is a polyethylene terephthalate film, polytetrafluoroethylene film, polyethylene film, polypropylene film, polybutene film, polybutadiene film, vinyl chloride copolymer film, or polyimide film Adhesive film. The adhesive film according to claim 25, wherein the surface of the base film is subjected to a release treatment with at least one release agent selected from the group consisting of alkylide, silicone, fluorine, unsaturated ester, polyolefin, and wax. The adhesive film according to claim 25, wherein the base film has a thickness of 10 to 500 µm. The thickness of the adhesive layer is 5-200 micrometers, The adhesive film of Claim 25 characterized by the above-mentioned. A first step of preparing a resin varnish by dissolving or dispersing the adhesive resin composition according to any one of claims 1 to 24 in a solvent; A second step of applying the resin varnish to the base film; And A third step of removing the solvent by heating the base film coated with the resin varnish Method for producing an adhesive film comprising a. 31. The method of claim 30, wherein the first step is Mixing a solvent, a filler and a coupling agent a); B) adding and mixing an epoxy resin and a curing agent to the mixture of step a); And Mixing the thermoplastic resin and the curing accelerator into the mixture of step b) c) Method for producing an adhesive film comprising a. Dicing tape; And The adhesive film according to claim 25 laminated on the dicing tape Dicing die bonding film comprising a. The dicing tape of claim 32, wherein the dicing tape is Base film; And Adhesion layer formed on the base film Dicing die bonding film comprising a. The method of claim 33, wherein the base film is a polyethylene film, polypropylene film, polytetrafluoroethylene film, polyethylene terephthalate film, polyurethane film, ethylene vinyl acetone film, ethylene-propylene copolymer film, ethylene-ethyl acrylate copolymer A dicing die bonding film, which is a film or an ethylene-methyl acrylate copolymer film. 34. The dicing die bonding film of claim 33, wherein the surface of the base film is surface treated by at least one method selected from the group consisting of primer coating, corona treatment, etching treatment, and UV treatment. 34. The dicing die bonding film of claim 33, wherein the pressure sensitive adhesive layer comprises an ultraviolet curable pressure sensitive adhesive or a heat curable pressure sensitive adhesive. A semiconductor wafer, wherein an adhesive film of the dicing die bonding film according to claim 32 is attached to one side of the wafer, and the dicing tape of the dicing die bonding film is fixed to the wafer ring frame. Wiring board; The adhesive film according to claim 25 attached to the chip mounting surface of the wiring board; And A semiconductor chip mounted on the adhesive film A semiconductor device comprising a.

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