TWI437070B - Wafer processing tape and semiconductor processing method using the same - Google Patents

Description

Wafer processing tape and semiconductor processing method using same

The present invention relates to a wafer processing tape used in a manufacturing step of a semiconductor device and a semiconductor processing method using the same, and more particularly to a semiconductor wafer and an adhesive layer cut by a thin grindstone rotating at a high speed And a step of using a die bonding step of singulation of the semiconductor wafer by dicing and singulation of the singulation layer by dicing and laminating on the substrate A dicing‧die bonding tape and a semiconductor processing method using the same.

In the wafer processing belt used in the manufacturing process of the semiconductor device, a dicing tape (adhesive tape) and a thermosetting adhesive film containing an epoxy resin component are laminated, and a dicing tape is obtained (for example, Patent Document 1) ~3). These dicing ‧ viscous ribbons can be firmly adhered to the substrate by thermal hardening by containing a compound having an epoxy group in the adhesive layer (adhesive film). Moreover, by setting the adhesive layer of the dicing tape to an energy ray-curing type, the adhesion of the dicing tape can be reduced by UV irradiation or the like, and the interface between the adhesive layer and the adhesive layer can be easily peeled off, so that the self-cutting tape can be self-cut. The semiconductor wafer singulated by the division and the adhesive layer singulated by the division are picked up.

For the dicing ‧ viscous ribbon as described above, it is required to reliably cut the ‧ singulated semiconductor wafer and the adhesive layer, and pick up one by one and supply the yield to the die bonding step with high yield, and also require The performance of the semiconductor wafer and the substrate is firmly adhered to.

However, when the dicing ‧ viscous ribbon as described above is used to cut a semiconductor wafer and an adhesive layer by a high-speed rotating thin whetstone, there is a disadvantage that one part of the singulated adhesive layer is bonded again, so that At the time of pickup, a state in which one portion of the semiconductor wafer is connected to the adjacent semiconductor wafer is supplied to the die bonding step, that is, a so-called "Double Die Error" occurs, resulting in deterioration of the yield of the step.

In order to suppress the occurrence of "recrystallization errors", it is necessary to at least expand the distance between the semiconductor wafers by expanding the dicing tape, thereby attempting to break the re-bonding. Therefore, the support substrate of the dicing tape is required to have uniform spreadability, and as such a dicing tape, a support substrate is proposed to be ethylene-(meth)acrylic acid 2-polymer or ethylene-(meth)acrylic acid-(A) A group consisting of an alkyl acrylate terpolymer or an ionic polymer obtained by crosslinking these chelates with metal ions (for example, Patent Documents 4 to 8).

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2002-226796

[Patent Document 2] Japanese Patent Laid-Open Publication No. 2005-303275

[Patent Document 3] Japanese Patent Laid-Open Publication No. 2006-299226

[Patent Document 4] Japanese Patent Laid-Open No. 5-156619

[Patent Document 5] Japanese Patent Laid-Open No. Hei 5-211234

[Patent Document 6] Japanese Patent Laid-Open Publication No. 2000-345129

[Patent Document 7] Japanese Patent Laid-Open Publication No. 2003-158098

[Patent Document 8] Japanese Patent Laid-Open Publication No. 2007-88240

However, even in the case of the above dicing tape, the effect of suppressing the occurrence of the recrystallization error is not necessarily sufficient, and there is a problem that the crystallite error sometimes occurs. Therefore, in order to further suppress the occurrence of the recrystallization error, it is required to sufficiently suppress the re-bonding of the semiconductor wafers at the time of pickup.

In order to solve the above problems, the present invention provides a wafer processing tape which can sufficiently suppress re-bonding of semiconductor wafers at the time of picking up, and a semiconductor processing method using the same.

The invention of claim 1 is a wafer processing belt in which the adhesive layer of the adhesive tape comprising the support substrate and the adhesive layer comprises a thermosetting adhesive layer of a compound having an epoxy group. The support substrate is an ionic polymer resin obtained by crosslinking an ethylene-(meth)acrylic acid 2-ary copolymer or an ethylene-(meth)acrylic acid-alkyl (meth)acrylate 3 copolymer by metal ion crosslinking. In the above copolymer, the (meth)acrylic component has a weight fraction of 1% or more and less than 10%, and the (meth)acrylic acid neutralizing degree in the ionic polymer resin is 50% or more. .

The invention of claim 2 is the wafer processing belt of claim 1, wherein the adhesive layer has one or more layers, and at least one of the layers is formed of an energy ray-curable adhesive. .

The invention of claim 3, wherein the semiconductor processing method of the wafer processing belt according to claim 1 or 2 has the following steps: a step of bonding a semiconductor wafer to the wafer processing belt Then, the semiconductor wafer and the adhesive layer of the wafer processing tape and the adhesive layer are cut by a high-speed rotating thin grindstone, and the support substrate of the wafer processing tape is cut in a thickness direction. a step of singulating the semiconductor wafer and the adhesive layer by 10 μm or more; and then, in a state in which the adhesive tape of the wafer processing tape is expanded, picking up the singulated semiconductor wafers one by one step.

The invention of claim 4 is the semiconductor processing method of claim 3, wherein the support substrate has a thickness of 60 μm or more, and the support substrate is cut in the thickness direction in the step of singulation. 30 μm.

The process of completing the present invention will be described below.

In the cutting step of the thin-type grindstone which is rotated at a high speed, the inventors of the present invention found that the part of the adhesive layer which is supposed to be singulated is bonded again, and the inventors have found that the reason is that it is included together with the semiconductor wafer. The assembly of chips of the chips of the cutting adhesive layer is clogged between the adjacent semiconductor wafers as shown in Fig. 6, thereby causing the adjacent semiconductor wafers to re-adhere to each other.

The adjacent semiconductor wafers caused by the chips containing the adhesive component are re-bonded to each other, and the dicing tape (adhesive tape) may be expanded in the pickup step to expand the distance between the semiconductor wafers to break the re-bonding. In order to expand the distance between all the semiconductor wafers, the support substrate of the dicing tape is required to have uniform spreadability. As a material of such a support substrate, for example, ethylene-(meth)acrylic acid 2-polymer or ethylene-(A) may be mentioned. An acryl polymer-alkyl (meth) acrylate 3-ary copolymer or an ionic polymer obtained by crosslinking any one of metal ions.

However, in the case where the re-bonding is relatively strong, in order to break all re-bonding, the uniform spreadability of the support substrate alone is still insufficient, and it is necessary to embrittle the re-bonding portion.

If the epoxy group-containing compound is removed from the adhesive layer of the dicing layer, the subsequent performance of the adhesive layer obtained by thermal hardening is reduced, followed by the chips generated by the cutting step. The adhesion of the ingredients of the agent is also reduced. As a result, the re-adhesive portion between adjacent semiconductor wafers is also embrittled, and the occurrence of recrystallization errors can be suppressed. However, in this case, the adhesion of the adhesive layer to the semiconductor wafer is lowered to impair the original performance. .

Therefore, in order to suppress the occurrence of a recrystallization error, a method is required to re-adhere the semiconductor wafers to each other by the chips containing the adhesive component without reducing the epoxy group-containing compound contained in the adhesive layer. .

The inventors of the present invention conducted intensive studies and found that ethylene-(meth)acrylic acid 2-polymer or ethylene-(meth)acrylic acid-(methyl) used for supporting the substrate of the crystal-cutting ‧ bonded ribbon The ratio of the (meth)acrylic component in the alkyl acrylate terpolymer is less than a specific amount, and is ion-polymerized by metal ions to suppress the occurrence of crystallite errors. By suppressing the (meth)acrylic component of the ionic polymer resin used for the support substrate and forming a stable complex with the metal ion to reduce the reactivity, the carboxyl group and the adhesive layer of the (meth)acrylic component can be suppressed. The reaction between the compounds having an epoxy group, thereby reducing the adhesion between the substrate chip component and the binder component in the chips generated by the cutting step, and causing the semiconductor wafers caused by the chips The adhesive part is brittle.

The effect of imparting sufficient uniformity to the support substrate and suppressing the occurrence of crystallizing errors is that the weight fraction of the (meth)acrylic component in the copolymer (2-ary copolymer, 3-ary copolymer) is less than 10%, and the ionic polymer resin having a degree of neutralization of (meth)acrylic acid in the ionic polymer resin of 50% or more, more preferably the weight fraction of the (meth)acrylic component is 3% or more and 5% or less. Further, the (meth)acrylic acid has an intermediate degree of ionic polymer resin of 50% or more.

When the weight fraction of the (meth)acrylic component in the copolymer of the supporting substrate (ionomer resin) is 1% or more, the uniform expandability of the supporting substrate can be expected, and if it is 3% or more, the content can be further increased. It is further desired to support the uniform spreadability of the substrate.

The weight fraction of the (meth)acrylic component in the copolymer of the ionic polymer resin can be quantified by a combination of NMR and thermal decomposition GC-ms mass spectrometry.

For example, based on the peak of the thermal decomposition GC-ms mass spectrum, an alkyl group in the alkyl ester region of the ethylene-(meth)acrylic acid-alkyl (meth)acrylate terpolymer can be identified.

Further, when ¹ H-NMR is used, the (meth)acrylic acid unit (α) hydrogen or (meth)acrylic acid unit in the ionic polymer resin of the ethylene-(meth)acrylic acid binary copolymer can be used. The integral value of the peak of the hydrogen of the methyl group is compared with the integral value of the peak of the hydrogen of the ethylene unit to be quantified. When it is observed that the peak of the methyl group derived from the (meth)acrylic acid unit and the peak of the ester terminal derived from the ethylene terminal or the alkyl (meth)acrylate derived from the chemical shift partially overlap each other, The methyl peak of the acrylic acid unit appears on the lower magnetic field side, so the fraction of the (meth)acrylic component can be estimated by integrating the low magnetic field side. About ethylene - (meth) acrylic acid - (meth) acrylic acid alkyl ester ternary copolymer, may still by using ¹ H-NMR, ^α according ester of (meth) acrylic acid and (meth) acrylic acid alkyl The peak of the hydrogen of the methyl group or the methyl group of the (meth)acrylic acid unit is used to quantify the total of the fraction of (meth)acrylic acid and the fraction of the alkyl (meth)acrylate, and further, regarding (meth) The fraction of the alkyl acrylate unit, since the fraction of the (meth)acrylic acid alkyl ester can be quantified only according to the peak of the hydrogen bonded to the carbon at the 1-position of the alkyl group, the (meth)acrylic acid can be calculated. The weight fraction.

Further, by making the degree of neutralization of (meth)acrylic acid by metal ions 50% or more, the (meth)acrylic component of the ionic polymer resin can be suppressed and a stable complex compound can be formed with the metal ion to be lowered. Reactive activity, thereby suppressing the reaction between the carboxyl group of the (meth)acrylic acid component and the epoxy group-containing compound in the adhesive layer, thereby reducing the substrate chip component and the adhesive in the chips generated by the cutting step The adhesion between the chip components causes the adhesive portion between the semiconductor wafers caused by the chips to be embrittled. As a result, it is possible to surely prevent the occurrence of a recrystallization error. The degree of neutralization of the above (meth)acrylic acid can be quantified by various spectroscopic analyses such as ICP emission analysis. For example, ICP luminescence analysis can be used to simultaneously identify metal ion species in the ionic polymer and its weight fraction. Further, if the weight fraction of (meth)acrylic acid in the ionic polymer can be known by the combination of the above NMR and thermal decomposition GC-ms mass spectrometry, the degree of neutralization can be matched with the information of the metal ion. Quantitative.

By applying the above-mentioned supporting substrate to a wafer processing belt such as a dicing die bonding layer, it is possible to suppress the occurrence of a recrystallization error, and the deeper the cutting amount of the supporting substrate in the dicing step, the greater the effect. On the other hand, if the amount of cut into the support substrate exceeds the required amount, there is a flaw in the breakage when the tape is expanded.

When the amount of cut in the support substrate is 10 μm or more in the thickness direction, the effect of suppressing the occurrence of the recrystallization error is sufficient, and the support substrate is cut in the thickness direction by 30 μm or less, and the support substrate is used. When the thickness is 60 μm or more, breakage of the support substrate can be prevented.

Further, by making the adhesive layer of the above-mentioned crystal-cutting adhesive layer have one or two or more layers, and at least one of the layers is formed of an energy ray-curable adhesive, the cutting step can be sufficient to firmly hold the wafer. The adhesive force, after the cutting, can effectively reduce the adhesive force of the dicing tape by irradiating the energy line, so that the semiconductor wafer can be not excessively loaded during the picking step, and the surface of the adhesive layer from the dicing tape is easily peeled off. A semiconductor wafer and a singulated adhesive layer.

According to the wafer processing belt of the present invention, since the (meth)acrylic component in the copolymer has a weight fraction of 1% or more and less than 10%, and the degree of neutralization of (meth)acrylic acid in the ionic polymer resin Since it is 50% or more, the re-bonding of the semiconductor wafers at the time of pick-up can be sufficiently suppressed, and the occurrence of the recrystallization error can be further suppressed.

Further, according to the semiconductor processing method of the present invention, the wafer processing tape of the present invention is used, and the support substrate of the wafer processing tape is oriented in the thickness direction in the step of singulating the semiconductor wafer and the adhesive layer. Since the cutting is 10 μm or more, it is possible to more sufficiently suppress the re-bonding of the semiconductor wafers at the time of picking up, and it is possible to further suppress the occurrence of the recrystallization error.

Hereinafter, embodiments of the present invention will be described in detail based on the drawings.

In the present embodiment, a dicing ‧ a viscous ribbon is exemplified as a wafer processing belt.

Fig. 1 is a cross-sectional view showing a dicing die viscous ribbon 10 of the present embodiment.

As shown in Fig. 1, the dicing die viscous tape 10 is formed by laminating an adhesive layer 13 on a dicing tape 12 which is an adhesive tape formed of a support substrate 12a and an adhesive layer 12b formed thereon. 1 shows the protection of the adhesive layer 13 and the dicing ‧ the adhesive ribbon 10 is provided with a release liner 11 .

Further, the adhesive layer 12b may be composed of one layer of an adhesive layer, or may be composed of two or more layers of an adhesive layer.

Further, the dicing tape 12 and the adhesive layer 13 may be precut into a specific shape in accordance with a step or device.

Moreover, the dicing ‧ the adhesive strip 10 may be formed into a shape of each of the semiconductor wafers, or may be rolled into a roll shape by forming a plurality of the dicing strips The form.

(Cut crystal ‧ adhesive crystal use method)

In the manufacturing steps of the semiconductor device, the dicing ‧ the adhesive ribbon 10 is used in the following manner.

FIG. 2 shows a state in which the semiconductor wafer 1 and the annular frame 20 are bonded to the dicing die 203.

First, as shown in FIG. 2, the dicing tape 12 is attached to the annular frame 20, and the semiconductor wafer 1 is bonded to the adhesive layer 13. The order of attachment is not limited, and the dicing tape 12 may be attached to the annular frame 20 after the semiconductor wafer 1 is attached to the adhesive layer 13, and the dicing tape 12 may be simultaneously applied to the annular frame 20. Attachment and bonding of the semiconductor wafer 1 to the adhesive layer 13 is performed.

Next, the cutting step of the semiconductor wafer 1 is performed by the thin-type grindstone 21 which rotates at a high speed (FIG. 3). At this time, the semiconductor wafer 1 is cut and divided together with the adhesive layer 13 and the adhesive layer 12b, and the support substrate 12a is cut in the thickness direction by 10 μm to 30 μm.

Further, it can be cut from the surface of the semiconductor wafer 1 to a specific depth by one cutting, and can be cut to a specific depth by a plurality of cuttings.

Specifically, in order to diced the semiconductor wafer 1 and the adhesive layer 13 by the thin grindstone 21, the dicing die 203 is adsorbed and supported from the side of the dicing tape 12 by the adsorption stage 22.

Thereafter, the semiconductor wafer 1 and the adhesive layer 13 are diced into semiconductor wafer units by a thin-type grindstone 21 that rotates at a high speed to achieve singulation.

When the adhesive layer 12b of the dicing tape 12 has one or more layers, and at least one of the layers is formed of an energy ray-curable adhesive, it is preferably after the cutting step from the lower side of the dicing tape 12 ( The support substrate 12a side is irradiated with an energy ray, whereby the adhesive layer 12b is hardened to lower its adhesive force.

Further, when the adhesive layer 12b is composed of two or more layers of an adhesive layer, an energy ray-curable adhesive may be used to form one layer or the entire layer in each of the adhesive layers, and the energy ray is irradiated thereto. Hardening reduces the adhesion of the layer or layer within each adhesive layer.

Furthermore, external stimuli such as heat may be used instead of the irradiation of the energy rays to reduce the adhesion of the dicing tape 12.

Thereafter, as shown in FIG. 4, a stretching step is performed to pull the dicing tape 12 holding the diced semiconductor wafer 1 (ie, the semiconductor wafer 2) and the diced adhesive layer 13 toward the diameter of the annular frame 20. Stretch.

Specifically, for the dicing tape 12 holding the plurality of semiconductor wafers 2 and the adhesive layer 13, the hollow cylindrical shape push-up member 30 is raised from the lower side of the dicing tape 12, and the dicing tape 12 is directed toward the annular frame 20. Stretch in the diameter direction. Thereby, by the stretching step, the distance between the semiconductor wafers 2 can be enlarged, and the semiconductor wafers 2 caused by the cutting chips generated in the cutting step can be destroyed (re-bonded), thereby preventing the recrystallization error in the pickup step. It happened.

After the stretching step is carried out, as shown in FIG. 5, the pickup step of picking up the semiconductor wafer 2 is performed in a state where the dicing tape 12 is stretched.

Specifically, the semiconductor wafer 2 is pushed up by the pin 31 from the lower side of the dicing tape 12, and the semiconductor wafer 2 is sucked by the adsorption jig 32 from the upper side of the dicing tape 12, thereby picking up the semiconductor wafer 2 and the adhesive layer. 13.

Next, a die bonding step is performed after the picking step is performed.

Specifically, the semiconductor wafer 2 is subsequently laminated on a lead frame or a package substrate by the adhesive layer 13 (attachment film) which is picked up together with the semiconductor wafer 2 by the pickup step.

Hereinafter, each constituent element of the dicing die viscous ribbon 10 of the present embodiment will be described in detail.

(adhesive layer)

After the semiconductor wafer 2 is bonded and bonded to the semiconductor wafer 2, the adhesive layer 13 is peeled off from the dicing tape 12 and adhered to the semiconductor wafer 2, and can be used to fix the semiconductor wafer 2 to a substrate or a lead frame. The agent of the time. Therefore, the adhesive 13 is a member in which the semiconductor wafer 2 is subsequently fixed to the substrate or the lead frame in the die bonding step and thus has sufficient reliability.

The adhesive layer 13 is obtained by previously forming a film of an adhesive containing at least one compound having an epoxy group, and may further contain a known polyimine resin, a polyamide resin, a polyether resin, or the like. Polyester resin, polyester phthalimide resin, phenoxy resin, polyfluorene resin, polyphenylene sulfide resin, polyether ketone resin, chlorinated polypropylene resin, acrylic resin, polyurethane resin A polymer component such as an epoxy resin, a polypropylene guanamine resin, a melamine resin or the like, or a mixture thereof, or an inorganic filler or a hardening accelerator. Further, in order to increase the adhesion to the substrate or the lead frame or the like, a decane coupling agent or a titanium coupling agent may be added as an additive.

The compound having an epoxy group is not particularly limited as long as it is cured, and is preferably an epoxy resin having a difunctional group or more and less than 500 to 5,000. Examples of such an epoxy resin include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, alicyclic epoxy resin, aliphatic chain epoxy resin, and phenol. Novolak type epoxy resin, cresol novolac type epoxy resin, bisphenol A novolak type epoxy resin, bisphenol diepoxypropyl etherate, naphthalene diphenol epoxide propyl ether, phenol Di-epoxypropyl ether compounds, di-epoxypropyl ether compounds of alcohols, and difunctional epoxy resins such as alkyl substituents, halides, and hydrides, and novolac type epoxy resins. Further, a general-purpose one such as a polyfunctional epoxy resin or a heterocyclic epoxy resin can also be used.

These may be used alone or in combination of two or more.

Further, it is also possible to contain components other than the epoxy resin in the form of impurities without impairing the characteristics.

The thickness of the subsequent agent layer 13 is not particularly limited, and is usually preferably from 5 to 100 μm.

Further, the adhesive layer 13 may be laminated on the entire surface of the dicing tape 12, or an adhesive film may be formed by pre-cutting a bonding film having a shape corresponding to the bonded semiconductor wafer 1 to form an adhesive layer 13. In the case of laminating the bonding film corresponding to the semiconductor wafer 1, as shown in FIG. 2, the adhesive layer 13 is provided on the portion where the semiconductor wafer 1 is bonded, and the portion of the annular frame 20 for bonding and dicing is not attached. The agent layer 13 is present only in the dicing tape 12. In general, since the adhesive layer 13 is difficult to be peeled off from the object to be skin, the annular frame 20 can be attached to the dicing tape 12 by using the pre-cut adhesive film, and it is difficult to peel off the tape after use. The annular frame 20 produces the effect of paste residue.

(cutting tape)

The dicing tape 12 has a sufficient adhesive force to prevent the semiconductor wafer 1 from being peeled off when the semiconductor wafer 1 is diced, and has a low adhesion force when the diced semiconductor wafer 2 is picked up, so that the adhesive layer 13 can be easily applied. The peeling is as shown in Fig. 1, and the adhesive layer 12b is provided on the support substrate 12a.

Supporting substrate 12a is an ionic polymer resin obtained by crosslinking an ethylene-(meth)acrylic acid diene copolymer or an ethylene-(meth)acrylic acid-alkyl (meth)acrylic acid alkyl ester terpolymer by metal ion crosslinking. Composition.

The (meth)acrylic component in the copolymer has a weight fraction of 1% or more and less than 10%, and the degree of neutralization of acrylic acid in the ionic polymer resin is 50% or more.

Here, in the case where the weight fraction of the (meth)acrylic component in the copolymer is composed of the ionic polymer resin obtained by supporting the base material 12a-based ethylene-acrylic acid 2-ary copolymer by metal ion crosslinking, It is defined by "m‧Mw _m /(n‧Mw _n +m‧Mw _m )" in the following structural formula 1.

Further, in the case where the support substrate 12a is composed of an ionic polymer resin obtained by crosslinking metal ions by methacrylic acid, the "b‧Mw _b /() in the following structural formula 2 a‧Mw _a +b‧Mw _b )".

Further, in the case where the support substrate 12a is composed of an ionic polymer resin obtained by crosslinking an ethylene-acrylic acid-alkyl acrylate terpolymer by metal ion, "m‧Mw in the following structural formula 3" _m / (n‧Mw _n +m‧Mw _m +1‧Mw ₁ )".

Further, in the case where the support substrate 12a is composed of an ionic polymer resin obtained by crosslinking an ethylene-methacrylic acid-alkyl methacrylate terpolymer by metal ion, it is represented by the following structural formula 4 "b‧Mw _b /(a‧Mw _a +b‧Mw _b +c‧Mw _c )"

Further, the degree of neutralization of (meth)acrylic acid in the ionic polymer resin is defined by the degree of ionization (neutralization) of the (meth)acrylic portion of the ionic polymer resin by metal ions (for example, Journal of the Society) Of Rheology, Japan Vol. 32, No. 2, 65-69, 2004). Further, m is m in the following structural formula 1 or the following structural formula 3 (that is, the number of repeating units of acrylic acid), and b is b in the following structural formula 2 or structural formula 4 (ie, repeating unit of methacrylic acid) number).

[Structure 1]

[Structure 2]

[Structure 3]

[Structure 4]

The type of the metal ion in the ionic polymer resin is not particularly limited, and from the viewpoint of contamination, Zn ions are preferred.

Further, an antioxidant, an anti-blocking agent, a leveling agent, or the like may be added to the ionic polymer resin as needed.

The thickness of the support base material 12a is not particularly limited, and even when the support base material 12a is cut at the time of cutting, it is preferable to have a thickness of 60 μm or more in terms of the strength at which the dicing tape 12 is not broken when expanded.

Further, in consideration of the fact that the semiconductor wafer 2 is pushed up by the pin 31 from the lower side of the dicing tape 12 at the time of pickup to promote the peeling of the adhesive layer 13 and the adhesive layer 12b, the support substrate 12a is supported from the viewpoint of substrate rigidity. The thickness is preferably 150 μm or less.

Further, in order to prevent peeling of the adhesive layer 12b from the support substrate 12a, corona discharge, plasma irradiation, ultraviolet irradiation, and other activation treatment may be applied to the surface of the support substrate 12a before the laminated adhesive layer 12b.

Further, in order to prevent sticking when the dicing die-bonding tape 10 is wound into a roll shape, it may be provided on the lower surface of the support substrate 12a (the surface opposite to the surface on which the adhesive layer 12b is formed). Concave or convex, or various coating methods for imparting smoothness.

The adhesive layer 12b may hold the semiconductor wafer 1 firmly at the time of dicing, and may be easily peeled off from the adhesive layer 13 at the time of pick-up. The composition and the like are not particularly limited, and it is preferable to have one or two or more layers. Structure, and at least one of the layers is formed by an energy ray-curable adhesive.

Further, the thickness of the adhesive layer 12b is not particularly limited and may be appropriately set, and is preferably 5 to 30 μm.

The adhesive for forming the adhesive layer 12b is preferably a known chlorinated polypropylene resin, an acrylic resin, a polyester resin, a polyurethane resin, an epoxy resin or an addition reaction type organic oxirane resin for use in an adhesive. , hydrazine acrylate resin, ethylene-vinyl acetate copolymer, ethylene-ethyl acrylate copolymer, ethylene-methyl acrylate copolymer, ethylene-acrylic acid copolymer, polyisoprene or styrene-butadiene copolymer Alternatively, various elastomers such as a hydride or the like may be prepared by appropriately blending a radiation polymerizable compound in a mixture thereof. Further, various surfactants or surface smoothing agents may be added.

As the radiation polymerizable compound, for example, a low molecular weight compound having at least two or more photopolymerizable carbon-carbon double bonds in the molecule can be obtained by stereoscopic reticulation by light irradiation, or photopolymerization can be carried out on the substituent. A polymer or oligomer of a carbon-carbon double bond.

Specifically, trimethylolpropane triacrylate, neopentyl alcohol triacrylate, neopentyl alcohol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate can be used. , 1,4-butanediol diacrylate, 1,6-hexanediol diacrylate, polyethylene glycol diacrylate or oligoester acrylate, etc., acrylate or other acrylic acid or copolymer of various acrylates Wait.

Further, in addition to the above acrylate-based compound, an urethane acrylate-based oligomer can also be used. The urethane acrylate oligomer is a polyhydric alcohol compound such as a polyester or a polyether, and a polyvalent isocyanate compound (for example, 2,4-toluene diisocyanate, 2,6-toluene diisocyanate, and 1,3-phenylenediene). a terminal isocyanate urethane prepolymer obtained by reacting methyl diisocyanate, 1,4-benzene dimethylene diisocyanate, diphenylmethane 4,4-diisocyanate or the like, and acrylic acid having a hydroxyl group Ester or methacrylate (eg 2-hydroxyethyl acrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl acrylate, 2-hydroxypropyl methacrylate, polyethylene glycol acrylate, polyethylene) Obtained by reaction of an alcohol methacrylate or the like.

Further, the adhesive forming the adhesive layer 12b may be a mixture of two or more selected from the above resins.

Further, in terms of being easily peeled off from the adhesive layer 13 containing a more polar epoxy group, it is preferable that the above-mentioned adhesive material exemplified as the adhesive for forming the adhesive layer 12b is as much as possible in the molecular structure. It contains a nonpolar group such as a trifluoromethyl group, a dimethylsilyl group or a long-chain alkyl group.

Further, in the adhesive (resin) in which the adhesive layer 12b is formed, in addition to the radiation-polymerizable compound which irradiates the adhesive layer 12b with radiation to cure the adhesive layer 12b, an acrylic adhesive or photopolymerization may be appropriately prepared. Starting agent, hardener, etc. are prepared.

In the case of using a photopolymerization initiator, for example, isopropyl benzoin ether, isobutyl benzoin ether, benzophenone, Michler's ketone, chlorothioxanthone may be used. , dodecyl thioxanthone, dimethyl thioxanthone, diethyl thioxanthone, benzyl dimethyl ketal, α-hydroxycyclohexyl phenyl ketone, 2-hydroxymethyl benzene Propane and the like.

According to the wafer processing belt (cut crystal ‧ the adhesive tape 10) described above, the adhesive layer 12b constituting the dicing tape 12 as the adhesive tape from the support substrate 12a and the adhesive layer 12b is laminated with epoxy The base compound 12a is composed of a thermosetting adhesive layer 13, and the support substrate 12a is an ethylene-(meth)acrylic acid 2 copolymer or an ethylene-(meth)acrylic acid-alkyl (meth)acrylate 3 copolymer. The ionic polymer resin obtained by crosslinking metal ions, the weight fraction of the (meth)acrylic component in the copolymer (2-ary copolymer, ternary copolymer) is 1% or more and less than 10%. Further, the degree of neutralization of (meth)acrylic acid in the ionic polymer resin is 50% or more.

Therefore, the support substrate 12a has uniform spreadability, and the semiconductor wafers 2 can be partially adhered to each other, so that the semiconductor wafers 2 can be re-adhered to each other during pick-up, thereby further suppressing the recrystallization error. occur.

Further, according to the dicing ‧ the adhesive tape 10 described above, since the adhesive layer 13 contains a compound having an epoxy group, the semiconductor wafer 2 can be firmly adhered to the substrate by the adhesive layer 13.

Further, according to the above-described dicing ‧ the adhesive ribbon 10, since the adhesive layer 12b has one or more layers and at least one layer is formed of an energy ray-curable adhesive, the semiconductor wafer 2 can be The singulated adhesive layer 13 is easily peeled off from the surface of the adhesive layer 12b of the dicing tape 12.

Further, according to the semiconductor processing method using the dicing ‧ viscous ribbon 10 described above, the method has the following steps: a step of bonding the semiconductor wafer 1 to the dicing die 203, and then using a high-speed rotating thin film The grindstone 21 cuts the semiconductor wafer 1 and the adhesive layer 13 and the adhesive layer 12b of the dicing ‧ the adhesive ribbon 10, and cuts the support substrate 12a of the dicing ‧ the adhesive ribbon 10 by 10 μm or more in the thickness direction to make the semiconductor a step of singulating the wafer 1 and the adhesive layer 13 (cutting step); then, picking up the adhesive tape 12 of the dicing ‧ the adhesive ribbon 10 together with the singulated adhesive layer 13 The step of singulating the semiconductor wafer 1 (i.e., the semiconductor wafer 2) (stretching step and picking step).

Therefore, since the cut crystal ‧ the adhesive tape 10 is used, and the support substrate 12a of the dicing ‧ the adhesive tape 10 is cut by 10 μm or more in the thickness direction in the dicing step, the semiconductor wafers 2 at the time of pick-up can be more sufficiently suppressed from each other The re-bonding can further suppress the occurrence of recrystallization errors.

Further, according to the semiconductor processing method using the dicing ‧ the adhesive tape 10 described above, the thickness of the support substrate 12a is 60 μm or more, and in the singulation step (cutting step), the support substrate 12a is cut in the thickness direction. 10 to 30 μm.

Therefore, since the thickness of the support base material 12a is 60 μm or more, and the support base material 12a is cut in the thickness direction by 10 to 30 μm in the cutting step, the support base material 12a does not break the strength of the support base material 12a even if the dicing tape 12 is expanded. And the re-bonding of the semiconductor wafers 2 to each other at the time of pickup can be almost completely suppressed.

Next, the embodiments of the present invention will be described, but the present invention is not limited to the embodiments.

First, a support substrate (base film) A to K was produced, and after the adhesive composition was prepared, the prepared adhesive composition was applied to a support substrate in such a manner that the thickness of the adhesive composition after drying was 20 μm. The film was dried at 110 ° C for 3 minutes to prepare an adhesive sheet (cut tape) having an adhesive layer formed on a support substrate.

Next, an adhesive composition was prepared, and the adhesive composition was applied to a release liner composed of a release-treated polyethylene terephthalate film so as to have a thickness of 60 μm after drying, and dried at 110 ° C. The adhesive film (adhesive layer) was formed on the release liner for 3 minutes.

Next, the prepared adhesive sheet and the adhesive film were cut into the shape shown in Fig. 1, and then the adhesive film was bonded to the adhesive layer side of the adhesive sheet to prepare samples of Examples 1 to 5 and Comparative Examples 1 to 6.

The method for producing the support substrates A to K, the adhesive composition, and the method for preparing the adhesive composition are shown below.

(Support for the production of substrate A)

An ethylene-methacrylic acid 2-polymer zinc ion polymer resin bead having a methacrylic component weight fraction of 1% and a methacrylic acid neutralization degree of 60% was melted at 140 ° C using an extruder This was formed into a long film shape having a thickness of 100 μm to obtain a support substrate A.

(Supporting the production of substrate B)

An ethylene-methacrylic acid 2-polymer zinc ion polymer resin bead having a methacrylic component weight fraction of 3% and a methacrylic acid neutralization degree of 50% was melted at 140 ° C using an extruder This was formed into a long film shape having a thickness of 100 μm to obtain a support substrate B.

(Supporting the production of substrate C)

An ethylene-methacrylic acid 2-polymer zinc ion polymer resin bead having a methacrylic component weight fraction of 5% and a methacrylic acid neutralization degree of 50% was melted at 140 ° C using an extruder This was formed into a long film shape having a thickness of 100 μm to obtain a support substrate C.

(Support for the production of substrate D)

An ethylene-methacrylic acid 2-polymer zinc ion polymer resin bead having a methacrylic component weight fraction of 9% and a methacrylic acid neutralization degree of 60% was melted at 140 ° C using an extruder It was formed into a strip film having a thickness of 100 μm to obtain a support substrate D.

(Support for the production of substrate E)

Ethylene-methacrylic acid-butyl methacrylate having a weight fraction of methacrylic acid component of 9%, a weight fraction of butyl methacrylate component of 12%, and a neutralization degree of 70% of methacrylic acid The resin beads of the terpolymer zinc ion polymer were melted at 140 ° C, and formed into a strip film having a thickness of 100 μm using an extruder to obtain a support substrate E.

(Support for the production of substrate F)

An ethylene-methacrylic acid 2-polymer zinc ion polymer resin bead having a methacrylic component weight fraction of 10% and a methacrylic acid neutralization degree of 60% was melted at 140 ° C using an extruder This was formed into a long film shape having a thickness of 100 μm to obtain a support substrate F.

(Supporting the production of substrate G)

A resin bead of a commercially available low-density polyethylene (PETROSEN 217: manufactured by Tosoh Co., Ltd.) having a methacrylic component having a weight fraction of 0% was melted at 140 ° C, and formed into a strip having a thickness of 100 μm using an extruder. The film was obtained, and the support substrate G was obtained.

(Supporting the production of substrate H)

A resin bead of an ethylene-methacrylic acid 2-ary copolymer having a methacrylic acid component weight fraction of 5% and a methacrylic acid neutralization degree of 0% was melted at 140 ° C, and formed into an extruder using an extruder. A long film having a thickness of 100 μm was obtained to obtain a support substrate H.

(Supporting the production of substrate I)

A resin bead of ethylene-methacrylic acid-butyl methacrylate terpolymer having a weight fraction of methacrylic acid component of 9% and a degree of neutralization of methacrylic acid of 0% was melted at 140 ° C, and extruded. The film was formed into a strip film having a thickness of 100 μm to obtain a support substrate I.

(Support for the production of substrate J)

An ethylene-methacrylic acid 2-polymer zinc ion polymer resin bead having a methacrylic component weight fraction of 1% and a methacrylic acid neutralization degree of 30% was melted at 140 ° C using an extruder It was formed into a strip film having a thickness of 100 μm to obtain a support substrate J.

(Supporting the production of substrate K)

An ethylene-methacrylic acid 2-polymer zinc ion polymer resin bead having a methacrylic component weight fraction of 5% and a methacrylic acid neutralization degree of 40% was melted at 140 ° C using an extruder It was formed into a strip film having a thickness of 100 μm to obtain a support substrate K.

(Preparation of adhesive composition)

Adding 20 parts by weight of trimethylolpropane trimethacrylate to n-butyl acrylate/2-hydroxyethyl methacrylate copolymer (average molecular weight: 500,000, glass transition temperature: -40 ° C) as radiation curability 7 parts by weight of a compound of a carbon-carbon double bond, a polyisocyanate compound Coronate L (manufactured by Nippon Polyurethane Industry Co., Ltd., trade name), as a curing agent, and further IRGACURE 184 (manufactured by Ciba-Geigy Japan Co., Ltd., trade name) 5 weight As a photopolymerization initiator, a radiation curable adhesive composition was obtained.

(Preparation of the composition of the adhesive)

100 parts by weight of a cresol novolak type epoxy resin is added to 100 parts by weight of an acrylic copolymer (glycidyl acrylate-based copolymer) as a compound having an epoxy group, and further, 10 parts by weight of a cresol novolak type phenol resin. 5 parts by weight of 2-benzimidazole and 0.5 parts by weight of xylenediamine were blended as an epoxy hardener, and 60 parts by weight of a nano cerium dioxide filler having an average particle diameter of 0.012 μm was added to obtain an adhesive composition.

<Example 1>

The adhesive composition prepared above was applied to the support substrate A to prepare a dicing tape, and the above-prepared adhesive composition was laminated on the dicing tape to prepare a sample of Example 1.

<Example 2>

The adhesive composition prepared above was applied to the support substrate B, a dicing tape was prepared, and the above-prepared adhesive composition was laminated on the dicing tape to prepare a sample of Example 2.

<Example 3>

The adhesive composition prepared above was applied to the support substrate C to prepare a dicing tape, and the above-prepared adhesive composition was laminated on the dicing tape to prepare a sample of Example 3.

<Example 4>

The adhesive composition prepared above was applied to the support substrate D to prepare a dicing tape, and the above-prepared adhesive composition was laminated on the dicing tape to prepare a sample of Example 4.

<Example 5>

The adhesive composition prepared above was applied to the support substrate E, a dicing tape was prepared, and the above-prepared adhesive composition was laminated on the dicing tape to prepare a sample of Example 5.

<Comparative Example 1>

The adhesive composition prepared above was applied to the support substrate F to prepare a dicing tape, and the above-prepared adhesive composition was laminated on the dicing tape to prepare a sample of Comparative Example 1.

<Comparative Example 2>

The adhesive composition prepared above was applied to the support substrate G to prepare a dicing tape, and the above-prepared adhesive composition was laminated on the dicing tape to prepare a sample of Comparative Example 2.

<Comparative Example 3>

The adhesive composition prepared above was applied to the support substrate H to prepare a dicing tape, and the above-prepared adhesive composition was laminated on the dicing tape to prepare a sample of Comparative Example 3.

<Comparative Example 4>

The adhesive composition prepared above was applied to the support substrate I to prepare a dicing tape, and the above-prepared adhesive composition was laminated on the dicing tape to prepare a sample of Comparative Example 4.

<Comparative Example 5>

The adhesive composition prepared above was applied to the support substrate J to prepare a dicing tape, and the above-prepared adhesive composition was laminated on the dicing tape to prepare a sample of Comparative Example 5.

<Comparative Example 6>

The adhesive composition prepared above was applied to the support substrate K to prepare a dicing tape, and the above-prepared adhesive composition was laminated on the dicing tape to prepare a sample of Comparative Example 6.

<Evaluation method>

(pick up test)

In each of the samples of Examples 1 to 5 and Comparative Examples 1 to 6, a tantalum wafer having a thickness of 50 μm and a diameter of 200 mm was bonded at 70 ° C, and cut into a size of 5 mm × 5 mm using a dicing apparatus (Disco 6340). At this time, the adjusting device cuts the dicing layer and the adhesive layer of the dicing tape, and further cuts the supporting substrate to a specific depth (0 μm, 10 μm, 20 μm) in the thickness direction.

Next, each of the cut samples was irradiated with ultraviolet rays of 200 mJ/cm ² using a metal halide lamp.

Then, for each sample, using a pick-up device (manufactured by Canon Machinery Co., Ltd., CAP-300II), the sample was tested 100 times in a state where the dicing tape of each sample was extended by 5% in the manner shown in FIG. Picking, in which the case where the semiconductor wafer can be picked up one by one is counted as success. The case where two or more semiconductor wafers are re-bonded and picked up is counted as failure.

The results of the evaluation are shown in Tables 1 and 2.

[Table 1]

[Table 2]

As is clear from the results of Table 1, the weight fraction of the (meth)acrylic component in the copolymer satisfying the supporting substrate is 1% or more and less than 10%, and among the (meth)acrylic acid in the ionic polymer resin The samples of Examples 1 to 5 having a degree of 50% or more can sufficiently suppress the occurrence of re-bonding at the time of pick-up without cutting the support substrate, and further suppress the pick-up if the support substrate is cut. The re-adhesion occurs. In particular, when the support substrate was cut by 20 μm in the thickness direction, it was found that the occurrence of re-adhesion at the time of pick-up can be completely suppressed.

On the other hand, as is clear from the results of Table 2, the weight fraction of the (meth)acrylic component in the copolymer which does not satisfy the supporting substrate is 1% or more and less than 10%, and in the ionic polymer resin (A) The samples of Comparative Examples 1 to 6 in which the degree of neutralization of acrylic acid was 50% or more were the same as in the case of not supporting the support substrate of the samples of Examples 1 to 5 when the support substrate was not cut. The ratio of the above or above is re-bonded at the time of picking up, and even if the support substrate is cut, re-bonding at the time of pick-up occurs.

According to the above, if the weight fraction of the (meth)acrylic component in the copolymer of the supporting substrate is 1% or more and less than 10%, and the degree of neutralization of (meth)acrylic acid in the ionic polymer resin is 50 Above %, the occurrence of recrystallization errors can be sufficiently suppressed. Further, when the support substrate is cut by 10 μm or more in the thickness direction, occurrence of a recrystallization error can be further suppressed.

1. . . Semiconductor wafer

2. . . Semiconductor wafer

10. . . Cut crystal ‧ adhesive tape (wafer processing tape)

11. . . Release liner

12. . . Cutting tape (adhesive tape)

12a. . . Support substrate

12b. . . Adhesive layer

13. . . Subsequent layer

20. . . Ring frame

twenty one. . . Thin grindstone

twenty two. . . Adsorption station

30. . . Push-up member

31. . . pin

32. . . Adsorption fixture

Fig. 1 is a cross-sectional view showing a schematic configuration of a dicing ‧ a die bond ribbon according to an embodiment of the present invention.

Fig. 2 is a view for explaining a schematic use method of a dicing ‧ a viscous ribbon, and is a view in which a semiconductor wafer is bonded to a dicing ‧ a viscous ribbon

Figure 3 is a diagram for explaining the subsequent steps (cutting step) of Figure 2.

Figure 4 is a diagram for explaining the subsequent steps (stretching steps) of Figure 3.

Figure 5 is a diagram for explaining the subsequent steps (pickup step) of Figure 4.

Fig. 6 is an electron micrograph obtained by photographing a state in which chips generated during cutting are clogged between semiconductor wafers.

1. . . Semiconductor wafer

2. . . Semiconductor wafer

12. . . Cutting tape (adhesive tape)

12a. . . Support substrate

12b. . . Adhesive layer

13. . . Subsequent layer

20. . . Ring frame

twenty one. . . Thin grindstone

twenty two. . . Adsorption station

Claims (4)

A wafer processing tape obtained by laminating a layer of a thermosetting adhesive layer containing a compound having an epoxy group in an adhesive layer of an adhesive tape composed of a support substrate and an adhesive layer, the support substrate It is composed of an ethylene-(meth)acrylic acid diene copolymer or an ethylene-(meth)acrylic acid-alkyl (meth)acrylate terpolymer which is crosslinked by metal ions to form an ionic polymer resin. The (meth)acrylic component has a weight fraction of 1% or more and less than 10%, and the (meth)acrylic acid has a degree of neutralization of 50% or more in the ionic polymer resin. The wafer processing belt according to claim 1, wherein the adhesive layer has one or more layers, and at least one of the layers is formed of an energy ray-curable adhesive. A semiconductor processing method using the wafer processing tape according to claim 1 or 2, comprising the steps of: bonding a semiconductor wafer to the wafer processing tape; and then using a high-speed rotation The semiconductor wafer and the adhesive layer of the wafer processing tape and the adhesive layer are cut by a thin grindstone, and the support substrate of the wafer processing tape is cut by 10 μm or more in a thickness direction to form the semiconductor crystal. a step of singulating the round and the adhesive layer; and subsequently, picking up the singulated semiconductor wafer one by one in a state in which the adhesive tape of the wafer processing tape is expanded. The semiconductor processing method according to claim 3, wherein the support substrate has a thickness of 60 μm or more, and the support substrate is cut in a thickness direction by 10 to 30 μm in the step of singulation.