KR101604323B1 - Method for manufacturing semiconductor-wafer-processing tape and semiconductor-wafer-processing tape - Google Patents

Abstract

Discloses a method for manufacturing a semiconductor wafer processing tape 10 that can reduce the amount of adhesive used in the adhesive layer, simplify the manufacturing process (in particular, reduce the number of cuts in the adhesive layer), and improve the quality of the product. This manufacturing method includes a printing step of forming an adhesive layer 12 by screen printing or gravure printing on the supporting film 11 with a die bonding adhesive substantially equal to or larger than the size of the semiconductor wafer, And a drying step of drying the adhesive layer (12).

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a method of manufacturing a semiconductor wafer processing tape,

The present invention relates to a method of manufacturing a semiconductor wafer processing tape and a tape for processing semiconductor wafers manufactured by the manufacturing method.

An adhesive tape (dicing tape) formed in a circular shape in the same manner as the tape for processing a semiconductor wafer is provided on a resin film for supporting on a die bonding tape having an adhesive layer formed in a circular shape substantially equal to or larger than the size of the semiconductor wafer There is a laminated dicing die-bonding film.

As a general method for producing such a multilayered tape, there is a method of applying an adhesive with a coater so as to cover the entire surface of one side of the resin film, then leaving a part of the resin film suitable for the size of the semiconductor wafer and removing unnecessary portions And the adhesive tape is laminated so that the adhesive tape is cut into a shape suitable for the ring frame (for example, Patent Document 1).

Japanese Patent Application Laid-Open No. 2007-002173

In the conventional manufacturing method, since an adhesive is applied to the entire one surface of one side of the resin film to form an adhesive layer once, and after that, the unnecessary portion is removed after pre-cutting the portion corresponding to the wafer size. There is a problem that the amount of the portion to be closed is increased. Particularly, in the case of using an expensive material such as an adhesive tape for die bonding, it is strongly required to reduce the amount of the portion to be discarded as an unnecessary portion in raising the product yield.

Further, in the case of producing a dicing / die-bonding film, in the conventional production method, formation of an adhesive layer, precursor of an adhesive layer, removal of unnecessary portions, bonding of an adhesive tape, precursory of an adhesive tape, ), There was a problem that the line was long. In some cases, after the adhesive layer is pre-cut, the separator is once joined from the top of the adhesive layer and rolled up in a roll form, and then the line is changed. The separator is peeled off, And it is necessary to perform the pre-cutting of the adhesive tape. In this case, the air flow rate further increases.

Further, when the adhesive tape is produced by a conventional method, it is necessary to cut the adhesive layer on the resin film on the supporting side into a semiconductor wafer shape. Therefore, when cutting the adhesive layer, There has been a problem that the infeed occurs. 10, when the adhesive layer 12 is formed on the supporting film 11 and then the adhesive layer 12 is cut, the outer peripheral portion of the adhesive layer 12 is vertically cut, A cut scratch 40 is formed on the supporting film 11 by the tip of the cut edge. In such a case, foreign matter such as film dust tends to adhere to the cut-in portion due to the cutter blade. Therefore, in order to improve the quality of the product, it is desired to suppress the occurrence of cut scratches as much as possible.

Accordingly, a main object of the present invention is to provide a method of manufacturing a semiconductor wafer processing tape capable of saving the amount of adhesive used in the adhesive layer, simplifying the manufacturing process (in particular, cutting the number of cuts in the adhesive layer) .

In order to solve the above problems, according to the present invention,

A printing step of forming an adhesive layer on the first resin film by screen printing or gravure printing with a die bonding adhesive substantially equal to or larger than the size of the semiconductor wafer;

A drying step of drying the adhesive layer; and a drying step of drying the adhesive layer.

According to the present invention, since the adhesive can be applied only to a necessary portion by screen printing or gravure printing of the adhesive in the printing process, there is no need to remove unnecessary portions of the adhesive layer, and the amount of adhesive used can be saved.

In this case, the cutting process of the adhesive layer can also be reduced, the manufacturing process can be simplified, and cut scratches are not formed on the first resin film, so that the quality of the product can be improved.

1 is a side view showing a schematic structure of a semiconductor wafer processing tape according to a preferred embodiment (first embodiment) of the present invention.
Fig. 2 is a view for explaining a manufacturing process of a semiconductor wafer processing tape.
3 is a conceptual diagram of an apparatus for manufacturing a semiconductor wafer processing tape.
4 is a cross-sectional view showing a schematic structure of a semiconductor wafer processing tape formed by a conventional manufacturing method.
Fig. 5 is a view showing a modified example of the adhesive layer of the semiconductor wafer processing tape shown in Fig. 1. Fig.
6 is a side view of the semiconductor wafer processing tape of the second embodiment.
Fig. 7 is a view for explaining the manufacturing process of the semiconductor wafer processing tape of the second embodiment. Fig.
8 is a side view of the semiconductor wafer processing tape of the third embodiment.
Fig. 9 is a view for explaining a manufacturing process of the semiconductor wafer processing tape according to the third embodiment. Fig.
FIG. 10 is a view for explaining a problem of the conventional manufacturing method.
Fig. 11 is a view for explaining the outer peripheral portion (inclined portion) of the adhesive layer of the sample according to the embodiment of the present invention.

(Mode for carrying out the invention)

≪ First Embodiment >

Hereinafter, a first embodiment of the present invention will be described with reference to the drawings.

Fig. 1 shows a side view of the semiconductor wafer processing tape 10 according to the present embodiment.

The tape 10 for semiconductor wafer processing comprises a support film 11 constituting a first resin film, an adhesive layer 12 composed of an adhesive for die bonding, a pressure-sensitive adhesive layer 13 composed of a dicing adhesive, Are laminated in this order.

The supporting film 11 supports the adhesive layer 12 at the time of manufacturing the semiconductor wafer processing tape 10 and also functions as a protective film for the adhesive layer 12. [

The adhesive layer 12 is bonded to a semiconductor wafer and is peeled off from the pressure-sensitive adhesive layer 13 when the chip is picked up after dicing, and is used as an adhesive for fixing the chip to a substrate or a lead frame .

The pressure-sensitive adhesive layer 13 is used as a pressure-sensitive adhesive when holding a semiconductor wafer and individual chips in dicing.

The base film 14 is an expandable tape for dividing the chip and the adhesive layer 12 by expanding after dicing.

First, the components of each layer will be described.

≪ Support film (11) >

As the supporting film 11, a polyethylene terephthalate (PET) film is suitably used. Further, in addition to the polyethylene terephthalate film, a plastic film such as a polytetrafluoroethylene film, a polyethylene film, a polypropylene film, a polymethylpentene film, or a polyimide film can be used. have.

≪ Adhesive layer (12) >

The adhesive layer 12 is not particularly limited and may be a die bonding tape generally used for the dicing and die bonding tape. However, if the adhesive layer 12 is flexible and easily torn, it is suitable for improving the yield of a semiconductor manufacturing process Do.

In order to obtain a flexible and tearable adhesive layer, it is preferable to satisfy at least one of the conditions (i) to (iii), preferably two conditions are satisfied, more preferably three It is better to meet all of the conditions.

(i) the B-stage state of the adhesive layer at break at 25 deg. C is not more than 40%, preferably not more than 10%, more preferably not more than 3%.

(Ii) the breaking strength of the adhesive layer 12 in the B-stage state at 25 캜 is 0.1 MPa or more and 10 MPa or less.

(Iii) a modulus of elasticity measured by dynamic viscoelasticity measurement at 25 DEG C at 10 Hz is 1 to 3000 MPa and a modulus of elasticity measured by dynamic viscoelasticity measurement at 25 DEG C and 900 Hz is 4,000 to 20,000 MPa.

If the elongation at break exceeds 40%, the tearability is not sufficient and the yield of the semiconductor manufacturing process may not be improved.

Likewise, when the breaking strength is less than 0.1 MPa, the flexibility of the adhesive layer 12 is insufficient and the handling property may decrease. When the breaking strength is more than 10 MPa, the tearability is insufficient, It is inappropriate because there is a possibility that it will not be.

The modulus of elasticity at 25 DEG C at 10 Hz is preferably 10 to 1500 MPa, more preferably 100 to 1200 MPa. If the modulus of elasticity is less than 1 MPa, the tearability is insufficient and the yield of the semiconductor manufacturing process may not be improved. If the modulus of elasticity exceeds 3000 MPa, cracks may be generated in the adhesive layer 12 during handling, not. The elastic modulus at 25 DEG C and 900 Hz is preferably 5000 to 15000 MPa. When the modulus of elasticity is less than 4000 MPa, tearing tends to be difficult, and when it is more than 20,000 MPa, cracks tend to occur at the time of handling.

The component constituting the adhesive layer 12 is not particularly limited as long as it satisfies the above characteristics, but it preferably contains a polymer component, a thermosetting component and a filler, and further contains a curing accelerator, a catalyst, an additive, And the like.

Since the breaking strength and fracture elongation tend to increase as the number of polymer components contained in the adhesive layer 12 increases and as the filler decreases, the elastic modulus tends to decrease as the number of polymer components decreases and the number of fillers increases, It is important to adjust the breaking strength and fracture elongation to be within the constant numerical range described above.

The polymer component is not particularly limited as long as it satisfies the above characteristics of the adhesive layer 12, but it is preferable that the polymer has a weight average molecular weight of 10,000 to 1,000,000 at a glass transition temperature (Tg) of -30 ° C to 50 ° C . If the Tg exceeds 50 캜, it is a problem in that the flexibility of the adhesive layer 12 is low. If the Tg is less than -30 캜, the flexibility of the adhesive layer 12 is excessively high, It is a problem in difficulty. If the weight average molecular weight is less than 10,000, the heat resistance of the adhesive layer 12 is lowered. If the molecular weight exceeds 10,000, the fluidity of the adhesive layer 12 is lowered.

From the viewpoints of easiness of tearing of the adhesive layer 12 and heat resistance, a polymer component having a weight average molecular weight of 100,000 to 900,000 at Tg of -20 DEG C to 40 DEG C is more preferable, and a polymer component having Tg of -10 DEG C to 50 DEG C A polymer component having an average molecular weight of 50,000 to 1,000,000 is preferable and a polymer component having a weight average molecular weight of 500,000 to 900,000 at a Tg of -10 to 30 占 폚 is particularly preferable.

The weight average molecular weight was determined by gel permeation chromatography (GPC) using a calibration curve of standard polystyrene and converted to polystyrene. L-6000 manufactured by Hitachi, Ltd. was used as a pump, and gel paced by Hitachi Chemical Co., (Gelpack) GL-R440, gel pack GL-R450 and gel pack GL-R400M (each 10.7 mm phi x 300 mm) were connected in this order. Using tetrahydrofuran as an eluent, 120 mg of a sample And a sample dissolved in 5 ml of THF at a flow rate of 1.75 ml / min.

Specific examples of the polymer component include polyimide, polystyrene, polyethylene, polyester, polyamide, butadiene rubber, acrylic rubber, (meth) acrylic resin, urethane resin, polyphenylene ether resin, polyetherimide resin, , Modified polyphenylene ether resins, phenoxy resins, polycarbonates, and mixtures thereof.

Particularly, it is preferable to use a polymer composition containing a functional monomer and having a weight average molecular weight of 100,000 or more, for example, a functional monomer such as glycidyl acrylate or glycidyl methacrylate, (Meth) acrylic copolymer having an epoxy group or the like. As the epoxy group-containing (meth) acrylic copolymer, for example, a (meth) acrylic ester copolymer, an acrylic rubber and the like can be used, and acrylic rubber is more preferable. The acrylic rubber is a rubber mainly composed of an acrylate ester, and mainly composed of a copolymer such as butyl acrylate and acrylonitrile, or a copolymer such as ethyl acrylate and acrylonitrile.

The polymer component is preferably contained in an amount of not more than 50% by weight, more preferably not more than 35% by weight, more preferably not less than 25% by weight and not more than 35% by weight based on the weight of the adhesive layer 12, Or less. If the blending amount of the polymer component is large, the breaking property of the adhesive layer 12 tends to deteriorate. If the blending amount is small, voids tend to occur because the fluidity at the time of bonding is excessively large.

Examples of the thermosetting component include an epoxy resin, a cyanate resin, a phenol resin and a curing agent thereof, and an epoxy resin is preferable from the viewpoint of high heat resistance. The epoxy resin is not particularly limited as long as it has an adhesive action by curing. Bisphenol A type epoxy, and other novolak type epoxy resins such as phenol novolak type epoxy resin and cresol novolak type epoxy resin. Further, generally known ones such as polyfunctional epoxy resins, glycidylamine type epoxy resins, heterocyclic ring-containing epoxy resins and alicyclic epoxy resins can be applied.

In the adhesive layer 12 of the present invention, the adhesive strength of the adhesive layer 12 in the B-stage state can be improved by improving the breaking strength, reducing the elongation at break, improving the handling property of the adhesive, improving the thermal conductivity, adjusting the melt viscosity, imparting thixotropic properties It is preferable to mix a filler, preferably an inorganic filler.

Examples of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, alumina, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica, ) Silica, antimony oxide, and the like. In order to improve the thermal conductivity, alumina, aluminum nitride, boron nitride, crystalline silica, amorphous silica and the like are preferable. For the purpose of adjusting the melt viscosity and imparting thixotropic properties, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, alumina, crystalline silica and amorphous silica are preferable Do. In order to improve moisture resistance, alumina, silica, aluminum hydroxide, and antimony oxide are preferable.

The filler amount is preferably 5 wt% or more and 90 wt% or less, more preferably 35 wt% or more and 70 wt% or less, based on the total weight of the adhesive layer (12). If the compounding amount is increased, problems such as an increase in the storage elastic modulus of the adhesive layer 12, a decrease in the adhesiveness, and a decrease in the electrical characteristics due to the residual voids tend to occur. The specific gravity of the filler is preferably 1 to 10 g / cm 3.

≪ Pressure-sensitive adhesive layer (13) >

There is no particular limitation on the component of the pressure-sensitive adhesive layer 13, and there is no particular limitation on the holding property of the pressure-sensitive adhesive layer 13 so as not to cause a defect such as chip flying without causing peeling from the adhesive layer 12 during dicing, As long as it has a property that peeling with the adhesive layer 12 is facilitated. In order to improve pick-up properties after dicing, the pressure-sensitive adhesive layer 13 is preferably a radiation-curable material, and is preferably a material that can be easily peeled off from the adhesive layer 12 after curing.

For example, a compound (A) having a radiation-curable carbon-carbon double bond with an iodine value of 0.5 to 20 in a molecule is blended with at least one compound selected from a polyisocyanate, a melamine-formaldehyde resin and an epoxy resin (B ) As an additive. Here, the radiation is an electromagnetic radiation such as ultraviolet rays or an ionizing radiation such as an electron beam.

The compound (A) which is one of the main components of the pressure-sensitive adhesive layer 13 will be described.

The introduction amount of the radiation-curable carbon-carbon double bond of the compound (A) is 0.5 to 20, preferably 0.8 to 10, in terms of iodine value. When the iodine value is 0.5 or more, the effect of reducing the adhesive force after irradiation is obtained. When the iodine value is 20 or less, the flowability of the pressure-sensitive adhesive after irradiation is sufficient and sufficient device clearance after stretching can be obtained sufficiently. It is possible to suppress the problem that image recognition of each element becomes difficult. Further, the compound (A) itself has stability and is easy to manufacture.

The compound (A) preferably has a glass transition point of -70 ° C to 0 ° C, and more preferably -66 ° C to-28 ° C. When the glass transition point Tg is -70 占 폚 or more, heat resistance against heat accompanying irradiation is sufficient, and when the glass transition point Tg is 0 占 폚 or less, a sufficient scattering prevention effect of the semiconductor chip after dicing in a wafer having a surface state is obtained.

The compound (A) may be produced by any method, and examples thereof include a mixture of an acrylic copolymer and a compound having a radiation curable carbon-carbon double bond, an acrylic copolymer having a functional group, or a methacrylic compound having a functional group A compound obtained by reacting the copolymer (A1) with a compound (A2) having a functional group capable of reacting with the functional group and having a radiation-curable carbon-carbon double bond is used.

The molecular weight of the compound (A) is preferably about 300,000 to 1,000,000. If it is less than 300,000, the cohesive force by the irradiation of radiation becomes small, and when the wafer is diced, deviation of the device tends to occur, and image recognition may become difficult. In order to prevent the deviation of the device as much as possible, it is preferable that the molecular weight is 400,000 or more. If the molecular weight exceeds 1 million, gelation may occur during synthesis and application. In the present invention, the molecular weight refers to the weight average molecular weight in terms of polystyrene.

When the compound (A) has an OH group having a hydroxyl value of 5 to 100, it is preferable because the risk of pick-up can be further reduced by reducing the adhesive force after irradiation with radiation. It is also preferable that the compound (A) has a COOH group having an acid value of 0.5 to 30. If the hydroxyl value of the compound (A) is too low, the effect of reducing the adhesive force after irradiation with radiation is not sufficient. If the hydroxyl value is too high, the flowability of the pressure sensitive adhesive after irradiation with radiation tends to be impaired. On the other hand, if the acid value is too low, the effect of improving the tape stability is not sufficient, and if it is too high, the flowability of the pressure-sensitive adhesive tends to be impaired.

Next, the compound (B) which is the other main component of the pressure-sensitive adhesive layer will be described.

The compound (B) is at least one compound selected from polyisocyanates, melamine-formaldehyde resin and epoxy resin, which may be used alone or in combination of two or more. This compound (B) acts as a crosslinking agent and improves the cohesive force of the pressure sensitive adhesive containing the compounds (A) and (B) as a main component due to the crosslinking structure resulting from the reaction with the compound (A) .

The amount of the compound (B) to be added is preferably 0.1 to 10 parts by weight, more preferably 0.4 to 3 parts by weight, based on 100 parts by weight of the compound (A). If the amount is less than 0.1 part by weight, the effect of improving the cohesive strength tends to be insufficient. If the amount is more than 10 parts by weight, the curing reaction proceeds rapidly during the compounding of the pressure-sensitive adhesive and during the coating operation to form a crosslinked structure, .

It is preferable that the pressure-sensitive adhesive layer 13 contains a photopolymerization initiator (C).

The photopolymerization initiator (C) containing the pressure-sensitive adhesive layer (13) is not particularly limited and conventionally known ones can be used. The amount of the photopolymerization initiator (C) to be added is preferably 0.01 to 5 parts by weight, more preferably 0.01 to 4 parts by weight, based on 100 parts by weight of the compound (A).

If necessary, a tackifier, a pressure-sensitive adhesive agent, a surfactant, etc., or other modifiers and inert ingredients may be added. The thickness of the pressure-sensitive adhesive layer 13 is not particularly limited, but is usually 2 to 50 占 퐉.

≪ Base material film 14 >

As the base film 14, it is preferable that the base film 14 is made of radiation-permeable material. Specifically, plastic, rubber or the like is usually used, and the base film 14 is not particularly limited as long as it transmits radiation. However, when the radiation- , A material having good light transmittance can be selected as the base material.

Examples of the polymer that can be selected as such a substrate include polyethylene, polypropylene, ethylene-propylene copolymer, polybutene-1, poly-4-methylpentene-1, ethylene-vinyl acetate copolymer, ethylene- - homopolymers or copolymers of? -Olefins such as methyl acrylate, ethylene-acrylic acid copolymer and ionomer, or mixtures thereof, engineering plastics such as polyethylene terephthalate, polycarbonate and polymethyl methacrylate, polyurethanes, Styrene-ethylene-butene or pentene-based copolymers, and polyamide-polyol copolymers, and mixtures thereof.

In order to increase the device clearance, it is preferable that the necking (occurrence of partial stretching due to defective propagation of force generated when the base film 14 is radially stretched) is minimized, and polyurethane, molecular weight and styrene content are limited A styrene-ethylene-butene or a pentene-based copolymer. In order to prevent stretching or warpage during dicing, it is effective to use a crosslinked base film 14. The thickness of the base film 14 is usually in the range of 20 to 300 mu m from the viewpoints of the strength and the radiation transmittance.

When the surface of the base film 14 opposite to the side to which the radiation-curing pressure-sensitive adhesive layer 13 is applied is textured or lubricant coated, the pressure-sensitive adhesive layer 13 is formed on the base film 14, It is preferable to reduce the friction between the dicing tape and the jig during radial stretching of the dicing tape thus formed to prevent the base film 14 from being necked.

≪ Manufacturing Method of Tape for Semiconductor Wafer Processing >

The above-described semiconductor wafer processing tape 10 is produced by the process shown in Fig.

First, the supporting film 11 is uncoiled (step A1), and the adhesive film 12 is formed on the unfolding supporting film 11 by using an adhesive containing the constituent of the above- A gravure printing is performed, and a printing process of forming an adhesive layer 12 is performed (step A2).

Next, a drying step of drying the printed adhesive layer 12 is performed (step A3).

Thereafter, a dicing tape 11 having a pressure-sensitive adhesive layer 13 formed on the base film 14 is formed on the surface of the adhesive layer 12 formed on the support film 11, The adhesive layer 12 and the pressure-sensitive adhesive layer 13 are brought into contact with each other to form a semiconductor wafer processing tape 10 (step A4).

Finally, the semiconductor wafer processing tape 10 is wound in a roll form (step A5).

3 shows a conceptual diagram of a manufacturing apparatus 30 for manufacturing the semiconductor wafer processing tape 10 by such a manufacturing method.

The manufacturing apparatus 30 includes a unrolling machine 31 for unloading the supporting film 11, a printing machine 32 for performing a printing process, a drying furnace 35 for performing a drying process, a joining portion 36, and a take-up machine 38 for winding the semiconductor wafer processing tape 10 are arranged in this order.

Hereinafter, the structure of the manufacturing apparatus 30 will be described, and the processing of each step of the manufacturing method of the semiconductor wafer processing tape 10 using the manufacturing apparatus 30 will be described.

[Step A1 (Release process)]

The unwinding device 31 holds a roll-like supporting film 11, and the film 11 is released successively from the releasing device 31 as the manufacturing work progresses. The support film 11 unrolled from the unwinder 31 is fed to the printing machine 32 for performing the printing process.

[Step A2 (printing process)]

The printing machine 32 forms the adhesive layer 12 on the supporting film 11 by a printing method. A plurality of adhesive layers 12, which are approximately equal to or larger than the size of the semiconductor wafer intermittently, are formed on the support film 11 to be fed by the printing machine 32. As used herein, the term " substantially identical " means a size that is smaller than the size of the semiconductor wafer but covers at least all the chips that are divided from the semiconductor wafer.

In the printing step, an adhesive layer 12 having a shape suitable for the size of the semiconductor wafer is formed by using an adhesive as an ink. The shape that is suitable for the size of the semiconductor wafer is preferably a circular shape and may be a polygonal shape including a shape that can accommodate an orientation flat or a notch if the semiconductor wafer has a notch and at least an area for bonding the semiconductor chip .

As described above, by forming the adhesive layer 12 having a shape suitable for the size of the semiconductor wafer by the printing process, the step of cutting the adhesive layer 12 to a wafer size can be omitted later.

That is, in this manufacturing method, it is not necessary to carry out the cutting process of cutting the adhesive layer 12 into a shape suitable for the size of the semiconductor wafer. This can prevent the occurrence of cut scratches on the adhesive layer 12 and the support film 11, thereby preventing foreign matter from remaining along with the occurrence of cut scratches and improving the quality of the product . In addition, since only the necessary portion is printed, the loss of the material used for the adhesive layer 12 can be greatly reduced.

As the printing method of the printing machine 32, screen printing, gravure printing, relief printing, concave printing, inkjet printing, or the like may be used, and a printing method capable of obtaining a desired thickness of the adhesive layer 12 may be selected.

Among the above printing methods, the screen printing method and the gravure printing method are suitable for pattern printing of the semiconductor wafer processing tape 10, and in the printing step, the adhesive layer 12 is formed by screen printing or gravure printing.

With respect to screen printing, although it is possible to perform printing with a thickness of several mu m to several hundreds of mu m, in general, depending on the solid content of the adhesive material (adhesive) and the mesh size of the screen plate, Therefore, it is possible to manufacture with high productivity.

As a screen printing press or a printing method, there is a roll-to-roll type or roll-to-roll type rotary screen printing machine in which a single sheet type printing machine and a single sheet type printing can be successively printed. In a rotary screen printing machine, Since the printing can be performed at a higher speed than the printing press, the production efficiency can be further increased.

As for the gravure printing, the thickness of the coating film per one time is about several micrometers. However, since the adhesive layer 12 can be manufactured at a high speed in a rotary manner, when the adhesive layer 12 (several micrometers) , Which is advantageous for productivity.

The printing method of screen printing or gravure printing can be selected according to the thickness of the adhesive layer 12 to be formed. When the thickness of the adhesive layer 12 is several mu m to 10 mu m or so, gravure printing is selected, When the thickness of the adhesive layer is 5 to 10 占 퐉 or more, screen printing is preferably selected.

The adhesive (die bonding adhesive) used in the printing process is obtained by dissolving or dispersing the material contained in the above-described adhesive layer 12 in a solvent. The solvent is not particularly limited, but cyclohexanone and methyl ethyl ketone are preferable.

The solvent is mixed in an amount of 5 to 80% by weight to adjust the viscosity of the adhesive at the atmospheric temperature during printing to an optimum range.

The range (area) from the unwinder 31 to the entrance of the drying oven 35 via the printing machine 32 is disposed in the temperature and humidity control unit 33 and the temperature and humidity adjuster 34 is disposed in the temperature and humidity control unit 33. [ It is possible to maintain the temperature and the humidity at a predetermined value. The temperature and humidity of the temperature / humidity control section (33) are appropriately selected according to the composition of the adhesive, the type of the solvent, and the like.

Desirably, at least the portion to be printed is disposed in the temperature / humidity control unit 33, but it is preferable that the interval from the portion to be printed to the drying path 35 is also disposed in the temperature / humidity control unit 33. However, from the viewpoint of providing a high-quality product, it is preferable to manufacture it with the apparatus configuration shown in Fig. 3. However, since the situation differs depending on the length of the drying furnace, the indoor environment in the manufacturing place, Humidity controller 33 and the temperature / humidity controller 34 are not necessarily required.

Considering the plate separability, thickness accuracy, and viscosity change of the adhesive during screen printing or gravure printing, it is preferable to suppress the evaporation rate of the solvent contained in the adhesive as much as possible. However, if a solvent having delayed drying action is incorporated in the adhesive excessively, productivity and productivity of the drying process are lowered. Therefore, the temperature and humidity control in the printing process atmosphere is performed and the evaporation rate is controlled. It is preferable to set the vapor pressure of the solvent contained in the adhesive to not more than 100 mmHg, but more preferably not more than 50 mmHg, more preferably not more than 30 mmHg Or less. By performing the temperature and humidity control in this way, the evaporation rate of the solvent contained in the adhesive can be suppressed, and the viscosity of the adhesive can be stabilized.

In the case of applying the adhesive by screen printing, since the adhesive layer 12 has a characteristic surface and a cross-sectional shape, the quality of the adhesive layer 12 is higher than that of a product produced by a general coater application method or a cut- Do.

In the case of screen printing, it is preferable to adjust the viscosity of the adhesive to 6 Pas or less, preferably 0.05 to 5 Pas (0.05 Pas or more and 5 Pas or less). When the viscosity of the adhesive is small, for example, when it is less than 0.05 Pas, the adhesive may permeate through the screen plate, and good printing may not be possible.

In the case of gravure printing, it is preferable to adjust the viscosity of the adhesive to 10 Pas or less, preferably 0.01 Pas Pas (0.01 Pas or less Pas Pas). This is because the adhesive is hardly dropped from the plate cylinder at the time of printing, and there is a transfer unevenness of the adhesive on the supporting film 11, which affects the printing quality (pinhole, etc.).

Further, in the gravure printing, since the pattern printing is the same as the screen printing, the same effect as described in the screen printing can be expected.

[Step A3 (drying step)]

The supporting film 11 on which the adhesive layer 12 is formed by the printing process is conveyed to the drying furnace 35 which performs a drying process for volatilizing the solvent contained in the adhesive layer 12. [

In the drying step, the temperature and the drying time in the drying furnace 35 are appropriately selected according to the composition of the adhesive, the type of the solvent, and the like. Preferably, the adhesive layer 12 is dried for several minutes at a temperature of room temperature to 200 캜 .

[Step A4 (bonding step)]

The supporting film 11 on which the adhesive layer 12 is dried by the drying process is a bonded portion 36 for performing a bonding process for bonding the base film 14 to the dicing tape 15 on which the pressure- . The adhesive layer 12 has a shape that is already matched to the shape of the semiconductor wafer by the printing process, and it becomes possible to carry out the bonding process subsequent to the drying process. Thus, the length of the manufacturing line can be shortened.

The supporting film 11 and the dicing tape 15 are sandwiched between the rollers 37 and a predetermined pressure is applied between the rollers 37 in the joining step (joining portion 36) The supporting film 11 and the dicing tape 15 are bonded so that the adhesive layer 12 formed on the dicing tape 15 and the adhesive layer 13 of the dicing tape 15 are in contact with each other. The pressure between the rollers 37 can be appropriately set, but it is preferable that the line pressure is 1 to 5 MPa. This completes the semiconductor wafer processing tape 10 in which the supporting film 11, the adhesive layer 12, the pressure-sensitive adhesive layer 13 and the base film 14 are laminated in this order.

[Step A5 (winding process)]

The completed semiconductor wafer processing tape 10 is wound by a winder 38 to form a tape 10 for processing a semiconductor wafer in roll form.

According to the embodiment described above, in the printing step, the adhesive layer 12 is formed by screen printing or gravure printing using the viscosity-adjusted adhesive, so that waste due to removal of the unnecessary portion of the adhesive layer 12 is eliminated Adhesive usage can be saved.

Further, according to the present embodiment, since the unnecessary portion of the adhesive layer 12 is not required to be cut, it is possible to simplify the manufacturing process of the semiconductor wafer processing tape, and furthermore, Thereby improving the quality of the product.

The simplification of the manufacturing process also has the following effects.

That is, in the conventional manufacturing method, as in the description of paragraph 0006, in the case where the line length is limited, the formation of the adhesive layer, the pre-cutting of the adhesive layer, the bonding of the separator, the change of the line, ... ... And the like. In this case, when bonding the adhesive layer and the separator, it is necessary to carry out bonding treatment while heating in a range of about 40 to about hundreds of degrees Celsius with a heating roll in order to increase the adhesiveness. Further, after separating the separator, Dicing tape 15) need to be bonded.

On the other hand, in the bonding step according to the present embodiment, since the adhesive layer 12 is directly bonded to the pressure-sensitive adhesive layer 13, adhesion is high and bonding can be performed at room temperature without using a heating roll. Therefore, according to the present embodiment, not only the manufacturing line length is shortened, but also the heating roll facility required in the conventional manufacturing method is unnecessary, and facility investment can be suppressed.

The improvement of the quality of the product accompanied by the suppression of the occurrence of cut scratches will also be described in detail.

4 shows a cross section of the dicing and die bonding tape 50 manufactured by the conventional manufacturing method.

4, in the dicing / die bonding tape 50, the outer peripheral portion of the adhesive layer 12 is cut almost vertically by the precut blade, and the cut film 40 Is formed. Here, the "cut scratch 40" refers to a state in which the support film 11 is recessed into the surface of the adhesive layer 12 side. In this case, when bonding the adhesive layer 12 and the dicing tape 15, foreign matter may remain in the portion along with the formation of the cut scratches 40, voids may be formed in the outer peripheral portion of the adhesive layer 12, May occur or may occur.

On the other hand, as in the present embodiment, the viscosity of the adhesive is adjusted to an optimum range (preferably 0.05 to 5 Pas in the case of screen printing, preferably 0.01 to several Pas in the case of gravure printing) 1, the cut film 40 is not formed on the supporting film 11, and the adhesive layer 12 is formed on the outer peripheral portion of the adhesive layer 12 by screen printing or gravure printing, (Side edge portion) has a sloped portion 12a which is gently inclined when viewed in cross section, so that adhesion between the adhesive layer 12 and the pressure-sensitive adhesive layer 13 is improved (increased) and voids are hard to occur Loses.

When the viscosity of the adhesive is large (for example, about 6 Pas in the case of screen printing), as shown in Fig. 5, the thickness slightly increases at the outer peripheral portion of the adhesive layer 12, (About + 30% to about the thickness in contact with the semiconductor wafer in the inner side range of about 1 mm from the outer peripheral edge). In this case, the interlayer adhesion between the outer peripheral portion of the adhesive layer 12 and the pressure-sensitive adhesive layer 13 is increased, so that the adhesive layer 12 and the dicing tape 15 can be laminated well.

In addition, the inside (center side) of the outer peripheral portion of the printed adhesive layer 12 can be suppressed by the screen plate to a thickness accuracy without problem in practical use. The semiconductor wafer is bonded to the smooth surface side of the adhesive layer 12 after the supporting film 11 is peeled off and is not affected by the convex portion 12b of the outer peripheral portion of the adhesive layer 12. [ However, from the viewpoint of pickupability of the semiconductor chip, the adhesive is printed at least larger than a size capable of covering all the chips divided from the semiconductor wafer, so that the formation range of the convex portion 12b of the adhesive layer 12, It is preferable that the printed area of the adhesive layer 12 is slightly increased (designed) with respect to the semiconductor wafer size so as not to overlap.

≪ Second Embodiment >

Next, the second embodiment will be described.

Basically, the second embodiment has the same configuration as that of the first embodiment described above. Hereinafter, parts having the same configuration are denoted by the same reference numerals, and a description thereof will be omitted.

Fig. 6 shows a side view of the semiconductor wafer processing tape 10 in the present embodiment.

In the present embodiment, the pressure-sensitive adhesive layer 13 is also formed by a printing method.

The production of the semiconductor wafer processing tape 10 of the present embodiment is performed by the process shown in Fig.

7, in place of the bonding step (step A4) for laminating the dicing tape 15 in the step shown in Fig. 2, the bonding step for laminating the circularly-printed dicing tape 15 A11).

The dicing tape 15 used in the bonding step (step A11) described above forms a circular pressure-sensitive adhesive layer 13, which is substantially equal to or larger than the size of the ring frame on the base film 14 constituting the resin film It is. The term " substantially identical " as used herein means a size that is smaller than the size (outer diameter) of the ring frame, but at least capable of contacting the ring frame larger than the inner diameter of the ring frame.

In this bonding step, the supporting film 11 and the dicing tape 15 are bonded so that the center of the circularly formed adhesive layer 12 and the center of the circularly formed pressure sensitive adhesive layer 13 coincide with each other .

The pressure sensitive adhesive layer 13 of the dicing tape 15 may be formed in a circle having substantially the same size as the adhesive layer 12 formed in a circular shape but is preferably formed in a circular shape larger than the adhesive layer 12.

When the pressure-sensitive adhesive layer 13 is formed in a circular shape larger than the adhesive layer 12, the adhesive layer 12 is present at the junction of the semiconductor wafer and the adhesive layer 12 is not present at the junction of the ring frame, 13) are present. Generally, since the adhesive layer 12 is difficult to peel off from the adherend, the ring frame can be bonded to the pressure-sensitive adhesive layer 13, and adhesive residue to the ring frame is generated at the time of peeling off the tape after use The effect that it is difficult to obtain is obtained.

The dicing tape 15 is produced by the same process as the process (steps A1 to A3) of forming the adhesive layer 12 on the supporting film 11. [

That is, the dicing tape 15 is manufactured by a printing process of forming a pressure-sensitive adhesive layer 13 on the base film 14 by a printing method and a drying process of drying the pressure-sensitive adhesive layer 13 printed.

The pressure-sensitive adhesive (dicing pressure-sensitive adhesive) used in the printing process is obtained by dissolving or dispersing the material contained in the above-mentioned pressure-sensitive adhesive layer 13 in a solvent.

The solvent is not particularly limited, but it is preferably prepared so that the viscosity of the pressure-sensitive adhesive is 0.05 to 5 Pas, more preferably 0.05 to 1 Pas.

The vapor pressure of the solvent contained in the pressure-sensitive adhesive is preferably 100 mmHg or lower, more preferably 10 mmHg or lower, more preferably 10 mmHg or lower, more preferably 10 mmHg or lower, more preferably 5 mmHg or lower, And particularly preferably 30 mmHg or less. By performing the temperature and humidity control in this way, the evaporation rate of the solvent contained in the pressure-sensitive adhesive can be suppressed, and the viscosity of the pressure-sensitive adhesive can be stabilized.

In addition, there is a possibility that dew condensation may occur when the atmosphere of the printing process is controlled by temperature and humidity. However, it is also possible to form the heat insulating material on the wall surface between the temperature and humidity control unit 33 and the drying furnace 35, It is desirable to take measures such as the stepwise management of the temperature and humidity.

Thus, the step of cutting the pressure-sensitive adhesive layer 13 later can be omitted for the dicing tape 15 by forming the pressure-sensitive adhesive layer 13 having a shape suitable for the size of the ring frame by the printing process, It is possible to prevent cut scratches on the base film 13 and the substrate film 14 from occurring. As a result, it is possible to prevent the foreign matter from remaining along with the occurrence of the cut scratches, thereby improving the quality of the product. In addition, since only the necessary portion is printed, the loss of the material used for the pressure-sensitive adhesive layer 13 can be greatly reduced

In the conventional manufacturing method, in manufacturing a multilayered adhesive tape such as a dicing / die bonding tape, after the die bonding tape is formed, the adhesive layer is cut into a semiconductor wafer shape, and then the dicing tape is bonded, And the outer circumferential surface is cut. In this case, a cut process is required every time the adhesive film is laminated, and a multi-step process is required.

On the other hand, by forming the adhesive layer 12 and the pressure-sensitive adhesive layer 13 by the printing process as in the present embodiment, it is possible to manufacture by a simple process, and the production efficiency for manufacturing the multilayered tape can be improved.

≪ Third Embodiment >

Next, the third embodiment will be described.

Basically, the second embodiment has the same configuration as that of the first embodiment described above. Hereinafter, parts having the same configuration are denoted by the same reference numerals, and a description thereof will be omitted.

Fig. 8 shows a side view of the semiconductor wafer processing tape 10 according to the present embodiment.

The semiconductor wafer processing tape 10 of the present embodiment has only the adhesive layer 12.

The production of the semiconductor wafer processing tape 10 of the present embodiment is performed by the process shown in Fig.

9, a joining step (step A21) for laminating the cover film 16 is performed instead of the joining step (step A4) for laminating the dicing tape in the step shown in Fig.

As the cover film 16, a film made of a material usable for the supporting film 11 can be used.

Although the dicing die bonding tape or the die bonding tape is shown as an example of the semiconductor wafer processing tape 10 in the first to third embodiments described above, the dicing tape and the back side of the semiconductor wafer are ground It is possible to apply the present invention to various tape manufacturing processes for semiconductor wafer fabrication and protection such as a surface protective tape for protecting the circuit pattern formation surface (wafer surface) of a semiconductor wafer in the backgrind process.

Although a method of continuously manufacturing the semiconductor wafer processing tape 10 by using the long supporting film 11 has been described, a method of manufacturing the semiconductor wafer processing tape 10 of one semiconductor wafer is also applicable to Applicable.

Next, examples for carrying out the effects of the present invention will be described in detail, but the present invention is not limited to these examples.

Example 1

[Production of adhesive tape]

(1) Production of adhesive tape 1

An acrylic copolymer compound composed of isooctyl acrylate, 2-hydroxyethyl acrylate and methyl methacrylate, and having a mass average molecular weight of 800,000 and a glass transition temperature of -30 占 폚.

Thereafter, 20 parts by weight of trimethylolpropane trimethacrylate as a compound having a radiation-curable carbon-carbon double bond and 100 parts by weight of a polyisocyanate compound colonnate L (CORONATE L) as a curing agent were added to 100 parts by weight of the copolymer compound 7 parts by weight, manufactured by Nippon Polyurethane Industry Co., Ltd.), and 5 parts by weight of Irgacure 184 (trade name, manufactured by Nihon Chiba Kikai K.K.) as a photopolymerization initiator were further added to obtain a radiation-curable pressure-sensitive adhesive.

This pressure-sensitive adhesive was applied to a base film having a thickness of 100 mu m made of a polypropylene resin and a hydrogenated styrene-butadiene copolymer, and then dried in a hot air drying furnace to obtain a laminate of a pressure- Whereby a chain adhesive tape 1 was obtained.

(2) Production of adhesive tape 2

An acrylic copolymer compound composed of isononyl acrylate, 2-hydroxyethyl acrylate and methyl methacrylate, and having a mass average molecular weight of 800,000 and a glass transition temperature of -30 占 폚.

Thereafter, 9 parts by weight of a polyisocyanate compound Kolonate L (trade name, manufactured by Nippon Polyurethane Industry Co., Ltd.) as a curing agent was added to 100 parts by weight of the copolymer compound to obtain a pressure-sensitive adhesive.

The pressure-sensitive adhesive was applied to the same base film as the pressure-sensitive adhesive tape 1 in the same manner as the pressure-sensitive adhesive tape 1 and dried to obtain the pressure-sensitive adhesive tape 2.

[Preparation of adhesive]

(1) Preparation of adhesive 1

30 parts by weight of a bisphenol F type epoxy resin (epoxy equivalent 160, trade name: YD-8170C, manufactured by Toto Kasei K.K.) as an epoxy resin, 30 parts by weight of a cresol novolak type epoxy resin (epoxy equivalent 210, trade name YDCN- 703) 10 parts by weight; 27 parts by weight of a phenol novolac resin (trade name: Plyophen LF2882, manufactured by Dainippon Ink and Chemicals, Inc.) as a curing agent for an epoxy resin; 28 parts by weight of an acrylic copolymer (weight-average molecular weight by gel permeation chromatography: 700,000, Tg of 4 캜, trade name: SG-708-6, manufactured by Nagase ChemteX Corporation) was used; 0.1 part by weight of an imidazole-based curing accelerator (Curezol 2PZ-CN manufactured by Shikoku Kasei Kogyo K.K.) was used as a curing accelerator; 132 parts by weight of a silica filler (S0-C2 (specific gravity: 2.2 g / cm3) manufactured by Adapine Corporation) was used; And 0.25 parts by weight of a silane coupling agent (trade name: A-189, manufactured by Nippon Unicar Co., Ltd.), 10 parts by mass of methyl ethyl ketone was added, stirred and mixed and vacuum degassed to obtain an adhesive 1.

The viscosity of the resulting adhesive varnish was measured by a B-type viscometer (Toki Sangyo TVB-10). As a result, the viscosity at 5 ° C was 5.0 Pas and the viscosity at 25 ° C was 4.5 Pas.

(2) Preparation of adhesive 2

Adhesive 2 was obtained in the same manner as Adhesive 1 except that 50 parts by mass of methyl ethyl ketone was added. The viscosity of the resulting adhesive varnish was measured. As a result, the viscosity at 5 ° C was 1.0 Pas and the viscosity at 25 ° C was 0.05 Pas.

(3) Preparation of adhesive 3

Adhesive 3 was obtained in the same manner as Adhesive 1 except that 60 parts by mass of methyl ethyl ketone was added. The viscosity of the resulting adhesive varnish was measured. As a result, the viscosity at 5 캜 was 0.04 Pas.

(4) Preparation of adhesive 4

Adhesive 4 was obtained in the same manner as Adhesive 1 except that 8.0 parts by mass of methyl ethyl ketone was added. The viscosity of the resulting adhesive varnish was measured, and as a result, the viscosity at 5 캜 was 6.0 Pas.

(5) Preparation of adhesive 5

Adhesive 5 was obtained in the same manner as Adhesive 1 except that 5 parts by mass of methyl ethyl ketone was added. The viscosity of the obtained adhesive varnish was measured, and as a result, the viscosity at 5 ° C was 11.0 Pas.

(6) Preparation of adhesive 6

Adhesive 5 was obtained in the same manner as Adhesive 1 except that 80 parts by mass of methyl ethyl ketone was added. The viscosity of the resulting adhesive varnish was measured, and as a result, the viscosity at 5 캜 was 0.01 Pas.

[Production of sample]

(1) Example 1

The adhesive 1 was printed on a PET film (thickness of 25 탆) as a supporting film so as to have a diameter of 320 mm, a printing thickness after drying of 20 탆 and a pitch of 60 mm by a roll-to-roll single plate screen printing method, .

The temperature and the like in the printing process were controlled so that the atmosphere of the printing portion was 5 DEG C and 40% RH, and the vapor pressure of the solvent in the temperature and humidity control portion was set to about 30 mmHg.

After the adhesive layer was formed by the printing process, a drying step of drying at a temperature of 150 DEG C for about 1 minute in the drying furnace was carried out.

Thereafter, a joining step of joining the pressure-sensitive adhesive tape 1, which was separately manufactured, with a linear pressure of 2 MPa was carried out to manufacture a semiconductor wafer processing tape.

(2) Example 2

A semiconductor wafer processing tape was produced in the same manner as in Example 1 except that the adhesive 2 was used instead of the adhesive 1.

(3) Example 3

A semiconductor wafer processing tape was produced in the same manner as in Example 1 except that the adhesive tape 2 was used in place of the adhesive tape 1.

(4) Example 4

A semiconductor wafer processing tape was produced in the same manner as in Example 2 except that the adhesive tape 2 was used in place of the adhesive tape 1.

(5) Comparative Example 5

A semiconductor wafer processing tape was produced in the same manner as in Example 1 except that the adhesive 3 was used instead of the adhesive 1.

(6) Example 6

A semiconductor wafer processing tape was produced in the same manner as in Example 1 except that the adhesive 4 was used instead of the adhesive 1.

(7) Example 7

A semiconductor wafer processing tape was produced in the same manner as in Example 1 except that the temperature in the printing process was changed to room temperature (25 占 폚).

(8) Example 8

A semiconductor wafer processing tape was produced in the same manner as in Example 2 except that the temperature in the printing process was changed to room temperature (25 캜).

(9) Example 9

Adhesive 2 was printed on the PET film (thickness 25 탆) as a supporting film by gravure printing so as to have a diameter of 320 mm, a printing thickness after drying of 5 탆, and a pitch of 40 mm to form an adhesive layer.

The temperature and the like in the printing process were adjusted so that the printing part environment was 5 ° C and 40% RH, and the vapor pressure of the solvent was set to about 30 mmHg.

After the adhesive layer was formed by the printing process, a drying step of drying at a temperature of 150 DEG C for about 1 minute in the drying furnace was carried out.

Thereafter, a joining step of joining the pressure-sensitive adhesive tape 2, which was separately manufactured, with a linear pressure of 2 MPa was carried out to manufacture a semiconductor wafer processing tape.

(10) Example 10

A semiconductor wafer processing tape was produced in the same manner as in Example 9, except that the adhesive 1 was used instead of the adhesive 2.

(11) Comparative Example 11

A semiconductor wafer processing tape was produced in the same manner as in Example 9, except that the adhesive 5 was used instead of the adhesive 2.

(12) Example 12

A semiconductor wafer processing tape was produced in the same manner as in Example 9, except that the adhesive 6 was used instead of the adhesive 2.

[Evaluation of sample (adhesive layer)] [

(1) Breaking strength, breaking elongation

The breaking strength and fracture elongation at 25 deg. C of the adhesive layer in the B stage state were measured with a tensile tester (digital load meter SV55 manufactured by Imadate Seiko Co., Ltd.) for samples each having a width of 10 mm, a length of 30 mm, A stress and a distortion curve at a chuck distance of 20 mm and a tensile speed of 0.5 m / min were measured, and then, obtained by the following formula.

Breaking strength (Pa) = maximum strength (N) / sectional area of the sample (m 2)

Breaking elongation (%) = (chuck length (mm) of sample at fracture-20) / 20 x 100

(2) Elastic modulus (storage elastic modulus)

The storage elastic modulus of the adhesive layer in the B stage state was measured using a dynamic viscoelasticity measuring apparatus (DVE-V4, manufactured by Leo Co., Ltd.) (sample size: length 20 mm, width 4 mm, Temperature elevation rate 5 캜 / min, tensile mode, 10 Hz or 900 ㎐, automatic static load).

(3) Cross-sectional shape of the adhesive layer

The printed portion was section cut with a microtome or razor blade, and the cross section was observed with a Hitachi High-Tech Technological Manufacturing Microscope (TM-1000) to measure thickness, size, shape and the like.

(4) Evaluation result

(4.1) Example 1

In the sample of Example 1, the adhesive layer 1 is formed by screen printing.

The breaking strength and breaking elongation of the adhesive layer 1 after the drying step (before the bonding step) were measured. As a result, the breaking strength was 5.0 MPa, and the breaking elongation was 15%.

The elastic modulus of the adhesive layer after the drying step (before the bonding step) was 2500 MPa at 25 DEG C / 10 Hz and was 8000 MPa at 25 DEG C / 900 Hz.

The adhesive layer 1 after the drying step (before the bonding step) was cut (terminated), and a cross section of the outer peripheral portion was observed under a microscope. As a result, it was found that the outer peripheral side portion was inclined gently. Specifically, the actual printing diameter was 321 mm with respect to the target printing diameter 320 mm when the adhesive layer 1 was viewed in a plane.

(4.2) Example 9

In the sample of Example 9, the adhesive layer 9 is formed by gravure printing.

The breaking strength and breaking elongation of the adhesive layer 9 after the drying step (before the bonding step) were measured. As a result, the breaking strength was 3 MPa, and the breaking elongation was 15%.

The elastic modulus of the adhesive layer 9 after the drying step (before the bonding step) was 2500 MPa at 25 DEG C / 10 Hz and was 8000 MPa at 25 DEG C / 900 Hz.

After the drying step (before the bonding step), the adhesive layer 9 was cut (terminated) and the cross section of the outer peripheral part was observed under a microscope. As a result, it was found that the outer peripheral side portion was inclined gently. Specifically, the actual printing diameter was 321 mm with respect to the target printing diameter 320 mm when the adhesive layer 9 was seen in a plane.

(4.3) Others

Table 1 shows production conditions and characteristics (evaluation results) of the adhesive layer of the samples including Examples 1 and 9, and the like.

With respect to the evaluation of the "thickness accuracy" in Table 1, the thickness of the adhesive layer in the samples of Examples 1 to 4, 6 to 8, and Comparative Example 5 in which the adhesive layer was formed by screen printing was designed to be 20 μm The thickness of the adhesive layer was designed to be 5 m in the samples of Examples 9 to 10 and 12 and Comparative Example 11 in which the adhesive layer was formed by gravure printing and the actual thickness of the adhesive layer was set at (Good) " when it falls within the range of 占 .5 占 퐉, and " - "

[theorem]

In the samples of Examples 1 to 4 and 6 to 8 in which the adhesive layer was formed by screen printing, a good semiconductor wafer processing tape could be obtained by a simple process.

Particularly, in Examples 1 to 4, since the viscosity of the adhesive is 0.05 Pas or more and 5 Pas or less and the temperature in the printing process is 10 占 폚 or less, the number of defects due to clogging of the screen plate is hardly seen, .

Further, in Examples 1 to 4 and 6 to 8, the thickness of the adhesive layer could also be suppressed within the range of 占 .5 占 퐉 in the solid layer.

In Examples 1 to 4 and 6 to 8, the amount of adhesive used was reduced to about 50% with respect to the conventional method (application by a coater).

In Example 6, although the viscosity of the adhesive exceeds 5 Pas, printing could be performed. In Example 6, the outer periphery of the adhesive layer exhibited a slightly convex shape when viewed in cross section (about 20% with respect to the thickness in contact with the wafer in the range of about 1 mm from the outer peripheral edge). In the sixth embodiment, it is preferable to avoid bonding to the semiconductor chip as much as possible, because the thickness of the vicinity of the outer peripheral portion is uneven. However, the thickness accuracy of the inner portion about 1 mm from the outer periphery is preferably within ± 1.5 μm, It can be judged that it can be utilized as an adhesive layer of a chip.

With respect to these samples, in Comparative Example 5, since the viscosity of the adhesive agent was less than 0.05 Pas, a shape spreading in which the thickness was decreased from the periphery to the edge side of the printed shape remarkably occurred, and when the adhesive agent was placed on the screen plate, Since the flow occurred, it was difficult to perform good printing (it was judged that the screen printing was not performed).

On the other hand, with respect to the samples of Examples 9 to 10 and 12 in which the adhesive layer was formed by gravure printing, printing of a good adhesive layer was obtained in all the samples.

Also in Examples 9 to 10 and 12, as in the case of screen printing, the amount of adhesive used was greatly reduced to about 50% with respect to the conventional method (application by a coater).

With respect to these samples, in Comparative Example 11, the viscosity of the adhesive was as large as 11 Pas and scratches were seen on the printed surface, and good printing could not be carried out (it was judged that the ink was not gravure printed).

Example 2

[Production of sample]

(1) Examples 13 to 17

An adhesive was printed on a PET film as a supporting film by a single-roll screen printing method using a roll-to-roll type to form an adhesive layer in the same manner as in the preparation of the sample of Example 1. [

In this printing process, as shown in Table 2, the viscosity of the adhesive and the printing thickness (design thickness) after drying were varied for each sample to set the production conditions. The adhesive was the same as the component of the adhesive 1, but the viscosity was controlled by adjusting only the amount of methyl ethyl ketone blended.

Thereafter, each process of the drying step and the bonding step was carried out in the same manner as in the production of the sample of Example 1 to produce a tape for processing semiconductor wafers.

(2) Examples 18 to 19

An adhesive was printed on a PET film as a supporting film by a gravure printing method in the same manner as in the production of the sample of Example 9 to form an adhesive layer.

In this printing process, as shown in Table 2, the viscosity of the adhesive and the printing thickness (design thickness) after drying were varied from sample to sample to set the production conditions. The adhesive was the same as that of the adhesive 2, but the viscosity was controlled by adjusting only the amount of methyl ethyl ketone blended.

Thereafter, each process of the drying step and the bonding step was carried out in the same manner as in the production of the sample of Example 9 to produce a tape for processing semiconductor wafers.

(3) Comparative Examples 20 to 22

An adhesive layer was formed using the same material as that of the sample of Example 1.

Specifically, an adhesive was coated on a front surface of a PET film (thickness 25 mu m) as a supporting film by a coater to form an adhesive layer once, and then this adhesive layer was formed into a film having a diameter of 320 mm and a pitch of 60 mm As shown in Fig.

Also in this process, as shown in Table 2, the viscosity of the adhesive and the printing thickness (design thickness) after drying were varied for each sample to set the production conditions. The adhesive was the same as the component of the adhesive 1, but the viscosity was controlled by adjusting only the amount of methyl ethyl ketone blended.

Thereafter, each process of the drying step and the bonding step was carried out in the same manner as in the production of the sample of Example 1 to produce a tape for processing semiconductor wafers.

[Evaluation of sample (adhesive layer)] [

Samples of Examples 13 to 17, 18 to 19 and Comparative Examples 20 to 22 were section cut with a microtome or a razor blade and the inclined portion of the adhesive layer was observed with a Hitachi High-Tech Technological Manufacturing Microscope (TM-1000) Shape and the like were measured.

11, the inclined portion 12a of the adhesive layer 12 when the outer peripheral portion of the adhesive layer 12 is viewed from the end face is inclined with respect to the inclined portion 12a of the inclined portion 12a The distance is measured with the thickness (distance in the vertical direction) as "t" and the distance in the horizontal direction in the inclined portion 12a as "ΔR", and a parameter indicating the shape of the inclined portion of the adhesive layer is defined as "ΔR / t ", and these parameters were calculated.

The measured values of the thickness t of the slope portion 12a and the distance DELTA R in the horizontal direction and the calculated values of the shape parameter DELTA R / t are shown in Table 2.

[theorem]

In the samples of Examples 13 to 17 and 18 to 19 in which the adhesive layer was formed by screen printing or gravure printing and in the samples of Comparative Examples 20 to 22 formed by applying and precuring the adhesive layer, The comparative test results show that in the samples of Examples 13 to 17 and 18 to 19, the numerical range of the shape parameter? R / t is within the range of the thickness t of the adhesive layer of 2 to 150 占 퐉, And satisfied the condition of formula (1).

0.4? DELTA R / t? (One)

In the samples of Examples 13 to 17 and 18 to 19, it was considered that the adhesiveness between the adhesive layer and the pressure-sensitive adhesive layer was good and the generation of voids was largely suppressed, and it was found that satisfying the condition of the formula (1) Could know.

With respect to these samples, the samples of Comparative Examples 20 to 22 did not satisfy the condition of the formula (1), and the adhesiveness between the adhesive layer and the pressure-sensitive adhesive layer was inferior to those of Examples 13 to 17 and 18 to 19.

In the samples of Examples 13 to 17 and 18 to 19, there is no cut scratches (see Fig. 10) in the supporting film, so that no foreign matter such as film dust remains in the cut- Was achieved.

The present invention relates to a method of manufacturing a semiconductor wafer processing tape in which an adhesive layer is formed on a supporting film, which can reduce the amount of adhesive used in the adhesive layer, simplify the manufacturing process Can be used particularly suitably.

10: Tape for semiconductor wafer processing
11: Support film (first resin film)
12: adhesive layer
12a:
12b:
13: Pressure-sensitive adhesive layer
14: Base film (second resin film)
15: Dicing tape
16: Cover film

Claims (9)

A printing step of forming an adhesive layer on the resin film by screen printing or gravure printing with a die bonding adhesive substantially equal to or larger than the size of the semiconductor wafer;
A drying step of drying the adhesive layer
A method for manufacturing a semiconductor wafer processing tape comprising the steps of:
(1) is satisfied when the outer peripheral part of the adhesive layer after the drying step is gently inclined when viewed from the end face, the thickness of the inclined part is t, and the distance in the horizontal direction is DELTA R Wherein said semiconductor wafer processing tape is a semiconductor wafer.
0.4? DELTA R / t? (One) A printing step of forming an adhesive layer on the first resin film by screen printing or gravure printing with a die bonding adhesive substantially equal to or larger than the size of the semiconductor wafer;
A drying step of drying the adhesive layer,
A dicing tape having a pressure-sensitive adhesive layer made of a pressure-sensitive adhesive for dicing formed on the second resin film on the surface of the first resin film on which the adhesive layer is formed is adhered so that the adhesive layer and the pressure-
A method for manufacturing a semiconductor wafer processing tape comprising the steps of:
(1) is satisfied when the outer peripheral portion of the adhesive layer after the drying step is gently inclined when viewed from a cross section and the thickness of the inclined portion is denoted by t and the distance in the horizontal direction is denoted by DELTA R Characterized in that it is a tape for semiconductor wafer processing.
0.4? DELTA R / t? (One) A printing step of forming an adhesive layer on the first resin film by screen printing or gravure printing with a die bonding adhesive substantially equal to or larger than the size of the semiconductor wafer;
A drying step of drying the adhesive layer,
A dicing tape having a pressure-sensitive adhesive layer made of a pressure-sensitive adhesive for dicing formed on the second resin film on the surface of the first resin film on which the adhesive layer is formed is adhered so that the adhesive layer and the pressure-
The method comprising the steps of:
In the printing step, the outer circumferential portion of the adhesive layer after the drying step is gently inclined when viewed in cross section, and when the thickness of the inclined portion is denoted by t and the distance in the horizontal direction is denoted by DELTA R, Of the total thickness of the semiconductor wafer.
0.4? DELTA R / t? (One) The method of claim 3,
Wherein in the printing step, the adhesive layer is formed in a shape suitable for the size of the semiconductor wafer. The method according to claim 3 or 4,
Wherein in the printing step, the adhesive for die bonding is printed so as to cover at least all the chips divided from the semiconductor wafer. The method of claim 3,
In the bonding step, the pressure-sensitive adhesive layer is formed on the second resin film as the dicing tape by screen printing or gravure printing of the dicing pressure-sensitive adhesive approximately equal to or larger than the ring frame size, Wherein the step of forming the semiconductor wafer comprises the steps of: delete delete delete

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