CN104508798A - Method for manufacturing semiconductor-wafer-processing tape and semiconductor-wafer-processing tape - Google Patents

Method for manufacturing semiconductor-wafer-processing tape and semiconductor-wafer-processing tape Download PDF

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Publication number
CN104508798A
CN104508798A CN201380039073.5A CN201380039073A CN104508798A CN 104508798 A CN104508798 A CN 104508798A CN 201380039073 A CN201380039073 A CN 201380039073A CN 104508798 A CN104508798 A CN 104508798A
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China
Prior art keywords
cement
semiconductor wafer
cement layers
adhesive tape
printing
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Granted
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CN201380039073.5A
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Chinese (zh)
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CN104508798B (en
Inventor
平泉敦嗣
丸山弘光
佐久间登
青山真沙美
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Furukawa Electric Co Ltd
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Furukawa Electric Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68377—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support with parts of the auxiliary support remaining in the finished device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)

Abstract

Disclosed is a method for manufacturing a semiconductor-wafer-processing tape (10) intended to reduce the amount of adhesive used in an adhesive layer, simplify manufacturing procedures (in particular, minimizing manpower needed for cutting the adhesive layer), and improve the end-product quality. The method includes a printing step for forming an adhesive layer (12) on a supporting film (11) by making a die-bonding adhesive substantially the same size as or larger than a semiconductor wafer and performing screen printing or gravure printing, and a drying step for drying the adhesive layer (12).

Description

The manufacture method of semiconductor wafer processing adhesive tape and semiconductor wafer processing adhesive tape
Technical field
The manufacture method that the present invention relates to semiconductor wafer processing adhesive tape and the semiconductor wafer processing adhesive tape utilizing this manufacture method manufacture.
Background technology
As the processing adhesive tape of semiconductor wafer, have the cutting/wafer junction film of stacked adhesive tape (dicing tape) on wafer joint tape, wherein, described wafer joint tape on the resin molding supported, has being substantially equal to or is greater than the size of semiconductor wafer and is formed as circular knitting layer, and described adhesive tape is formed as circular equally.
As the common manufacturing method of such multilayer tape, there will be a known following manufacture method (such as, patent documentation 1): in the mode of the whole one side of overlay tree adipose membrane, coating machine is utilized to be coated with cement, then, utilize and retain a part in the mode conformed to the size of semiconductor wafer and remove the method not needing part, formed and laminate adhesive adhesive tape, adhesive tape is cut into the shape conformed to annular frame.
Prior art document
Patent documentation
Patent documentation 1: Japanese Unexamined Patent Publication 2007-002173 publication
Summary of the invention
The problem that invention will solve
In existing manufacture method, be coated with cement at the whole one side of resin molding and form cement layers for the time being, then, be pre-cut the part corresponding with wafer size, then remove and do not need part, therefore, there is the problem that the amount of the part of discarding as not needing part among cement layers is more.Especially, when the such expensive material of the joint tape employing wafer joint, in order to improve finished product rate, the amount reducing the part of discarding as not needing part is strongly required.
In addition, when manufacturing cutting/wafer junction film, in existing method for making, the formation of cement layers, the removal precuting, do not need part of cement layers, the laminating of adhesive tape, the precut of adhesive tape be carried out, there is the problem that man-hour is many, produce line length.Owing to producing the restriction etc. of line length, according to circumstances, after precut cement layers, need to fit for the time being spacer above cement layers, batch as after roll, change production line, peel off spacer, make adhesive tape fit in cement layers, carry out the precut of adhesive tape, in this case, increase further man-hour.
In addition, when utilizing existing method to manufacture joint tape, need, on the resin molding of support-side, cement layers is cut into semiconductor die sheet, therefore, when cutting cement layers, produce the problem along the incision of the cutting part of cement layers on the surface of support membrane.That is, as shown in Figure 10, support film 11 forms cement layers 12, then, when cutting cement layers 12, the peripheral part of cement layers 12 is vertically cut, and due to the front end of its cutting tool, forms incised wound 40 in support membrane 11.Under these circumstances, the switch-in part caused at cutting tool divides the foreign matters such as easy coherent film dirt, therefore, in order to realize the raising of product quality, expects the generation that can as far as possible suppress to hurt.
Therefore, main purpose of the present invention is the manufacture method providing a kind of semiconductor wafer processing adhesive tape, and it can realize the saving of the cement use amount of cement layers, the simplification (especially the reduction in cutting man-hour of cement layers) of manufacturing process and the raising of product quality.
For the means of dealing with problems
In order to overcome the above problems, according to the present invention, provide a kind of manufacture method of semiconductor wafer processing adhesive tape, it comprises:
Printing process, to be substantially equal to or to be greater than the size of semiconductor wafer, on the 1st resin molding, silk screen printing or intaglio printing wafer joint cement, form cement layers thus; With
Drying process, makes described cement layers dry.
Invention effect
According to the present invention, in printing process, by cement is carried out silk screen printing or intaglio printing, can only to required part coating cement, therefore, what do not need removal cement layers does not need part, can save the use amount of cement.
Under these circumstances, the cutting action of cement layers can also be cut down, the simplification of manufacturing process can be realized, and, incised wound can not be formed, therefore, it is possible to realize the raising of product quality to the 1st resin molding.
Accompanying drawing explanation
Fig. 1 is the end view of the schematic structure of the semiconductor wafer processing adhesive tape that the preferred embodiment of the present invention (the 1st execution mode) is shown.
Fig. 2 is the figure be described the manufacturing process of semiconductor wafer processing adhesive tape.
Fig. 3 is the concept map of the manufacturing installation of semiconductor wafer processing adhesive tape.
Fig. 4 is the cutaway view of the schematic structure that the semiconductor wafer processing adhesive tape utilizing existing manufacture method to be formed is shown.
Fig. 5 is the figure of the variation of the cement layers of the semiconductor wafer processing adhesive tape that Fig. 1 is shown.
Fig. 6 is the end view of the semiconductor wafer processing adhesive tape of the 2nd execution mode.
Fig. 7 is the figure be described the manufacturing process of the semiconductor wafer processing adhesive tape of the 2nd execution mode.
Fig. 8 is the end view of the semiconductor wafer processing adhesive tape of the 3rd execution mode.
Fig. 9 is the figure be described the manufacturing process of the semiconductor wafer processing adhesive tape of the 3rd execution mode.
Figure 10 is the figure of the problem caused for illustration of existing manufacture method.
Figure 11 is the figure of the peripheral part (rake) of the cement layers of sample for illustration of embodiments of the invention.
Embodiment
< the 1st execution mode >
Below, with reference to accompanying drawing, the 1st execution mode of the present invention is described.
Fig. 1 illustrates the end view of the semiconductor wafer processing adhesive tape 10 in present embodiment.
This semiconductor wafer processing adhesive tape 10 is sequentially laminated with as the support film 11 of the 1st resin molding, the cement layers 12 be made up of wafer joint cement, the adhesive phase 13 be made up of cutting adhesive and the base material film 14 as the 2nd resin molding.
When manufacturing semiconductor wafer processing with adhesive tape 10, support film 11 supports cement layers 12, and plays a role as the diaphragm of cement layers 12.
Cement layers 12 and semiconductor wafer are fitted, and when carrying out cutting rear pick-up chip, peeling off and be attached to chip with adhesive phase 13, when being fixed on substrate or lead frame by chip, using as cement.
When cutting, adhesive phase 13 uses as the adhesive during chip kept after semiconductor wafer and singualtion.
Base material film 14 can expand the adhesive tape of (expand) for coming disjunction chip and cement layers 12 by the expansion after cutting.
First, the composition of each layer is described.
< supports with film (11) >
As support film 11, be applicable to using PETG (PET) film.In addition, except PETG film, also can use the plastic films such as poly tetrafluoroethylene, polyethylene film, polypropylene screen, polymethylpentene film, polyimide film, these plastic films also can effects on surface carry out demoulding process after use.
< cement layers (12) >
Cement layers 12 is not particularly limited, as long as the wafer joint tape usually used in cutting/wafer joint tape, if having flexibility and easily disconnect, then the rate of finished products for raising semiconductor fabrication sequence is applicable.
In order to obtain there is flexibility and the cement layers easily disconnected, meet (i) ~ (iii) at least 1 condition, preferably meet two conditions, more preferably meet whole 3 conditions.
I the elongation at break of B-stage state at 25 DEG C of () cement layers is less than 40%, be preferably less than 10%, be more preferably less than 3%.
(ii) fracture strength of the cement layers 12 of B-stage state at 25 DEG C is more than 0.1MPa and below 10MPa.
(iii) modulus of elasticity of the Measurement of Dynamic Viscoelasticity based on 25 DEG C and under 10Hz is 1MPa ~ 3000MPa, and the modulus of elasticity of the Measurement of Dynamic Viscoelasticity based on 25 DEG C and under 900Hz is 4000MPa ~ 20000MPa.
When elongation at break is more than 40%, easily broken aperture is not enough, likely can not improve the rate of finished products of semiconductor fabrication sequence, thus improper.
Equally, when fracture strength is less than 0.1MPa, the flexibility of cement layers 12 is not enough, and operational processes likely declines, and when more than 10MPa, easily broken aperture is not enough, likely can not improve the rate of finished products of semiconductor fabrication sequence, thus improper.
25 DEG C and modulus of elasticity under 10Hz is preferably 10 ~ 1500MPa, be more preferably 100 ~ 1200MPa.When this modulus of elasticity is less than 1MPa, easily broken aperture is not enough, likely can not improve the rate of finished products of semiconductor fabrication sequence, when more than 3000MPa, likely to crack in cement layers 12 when operational processes and not preferred.In addition, 25 DEG C and modulus of elasticity under 900Hz is preferably 5000 ~ 15000MPa.When this modulus of elasticity is less than 4000MPa, there is the trend being difficult to disconnect, when more than 20000MPa, there is the trend easily cracked when operation uses.
As long as the composition forming cement layers 12 meets above-mentioned characteristic, be not particularly limited, preferably comprise macromolecule component, Thermocurable composition and filler, in addition, curing accelerator, catalyst, additive, coupling agent etc. can be comprised further.
In addition, the macromolecule component comprised in cement layers 12 is more, filler more at least fracture strength and elongation at break higher, and modulus of elasticity have macromolecule component less, trend that filler is higher more at most, therefore, regulate these compositions (component ratio), make fracture strength or elongation at break be above-mentioned explanation fixing number range in very important.
As macromolecule component, as long as meet the described characteristic of cement layers 12, be not particularly limited, but preferably its glass transition temperature (being denoted as Tg below) is-30 DEG C ~ 50 DEG C, weight average molecular weight is 10,000 ~ 1,000,000.When Tg is more than 50 DEG C, the flexibility of cement layers 12 this aspect lower has problems, and when Tg is less than-30 DEG C, the flexibility of cement layers 12 is too high, and it is unfavorable thus not easily to disconnect on this aspect at cement layers 12.In addition, when weight average molecular weight is less than 10,000, have problems on the thermal endurance of cement layers 12 declines this aspect, when molecular weight is more than 1,000,000, have problems on the mobility of cement layers 12 declines this aspect.
From the view point of easily broken aperture and the thermal endurance of cement layers 12, more preferably Tg be-20 DEG C ~ 40 DEG C and weight average molecular weight be 100,000 ~ 900,000 macromolecule component, preferred Tg be-10 DEG C ~ 50 DEG C and weight average molecular weight be 50,000 ~ 1,000,000 macromolecule component, particularly preferably Tg be-10 DEG C ~ 30 DEG C and weight average molecular weight be 500,000 ~ 900,000 macromolecule component.
In addition, weight average molecular weight is by gel permeation chromatography (GPC) and the polystyrene conversion value using the calibration curve based on polystyrene standard and obtain, as pump, employ Hitachi L-6000, as chromatographic column, employ and link Hitachi Chemical Industries (Ltd.) Gelpack GL-R440 successively, Gelpack GL-R450 and Gelpack GL-R400M (each 10.7mm φ × 300mm) and the chromatographic column obtained, as eluent, employ oxolane, the sample obtained for making sample 120mg be dissolved in THF5ml, the value determined with flow velocity 1.75mL/ minute.
As macromolecule component, specifically, polyimides, polystyrene, polyethylene, polyester, polyamide, butadiene rubber, acrylic rubber, (methyl) acrylic resin, polyurethane resin, polyphenylene oxide resin, polyetherimide resin, phenoxy resin, modified polyphenylene ether resin, phenoxy resin, Merlon and their mixture etc. can be enumerated.
Be particularly preferably and comprise functional monomer and weight average molecular weight is the macromolecule component of more than 100,000, such as comprise the functional monomer such as glycidyl acrylate or glycidyl methacrylate and weight average molecular weight be more than 100,000 (methyl) acrylic copolymer etc. containing epoxy radicals.As the acrylic copolymer of (methyl) containing epoxy radicals, such as, can use (methyl) acrylate copolymer, acrylic rubber etc., be more preferably acrylic rubber.Acrylic rubber is with acrylate main component, primarily of the rubber that the copolymer of butyl acrylate and acrylonitrile etc. or the copolymer of ethyl acrylate and acrylonitrile etc. etc. are formed.
About macromolecule component, relative to the weight after the weight that the total weight from cement layers 12 deducts filler, preferably containing less than 50 % by weight, more preferably containing less than 35 % by weight, particularly preferably containing more than 25 % by weight and less than 35 % by weight.When the blend amount of macromolecule component is more, the trend that the breaking property that there is cement layers 12 worsens, when blend amount is less, mobility during owing to engaging is excessive, there is the trend producing space.
As Thermocurable composition, there are epoxy resin, cyanate ester resin, phenolic resins and curing agent thereof etc., on thermal endurance this aspect high, be preferably epoxy resin.About epoxy resin, as long as solidification occurs and there is conjugation, be not particularly limited.The phenolic resin varnish type epoxy resins etc. such as two functional epoxy resins such as bisphenol A type epoxy resin, phenol novolak type epoxy resin or cresol novolak type epoxy resin can be used.In addition, polyfunctional epoxy resin, glycidyl amine type epoxy resin, the known epoxy resin such as epoxy resin or alicyclic epoxy resin containing heterocycle can also be applied.
In addition, by reduce the fracture strength of the cement layers 12 of B-stage state, elongation at break, raising cement operational processes, improve heat conductivity, adjustment melt viscosity, give thixotropy etc. for the purpose of, in cement layers 12 of the present invention, mixture has filler, preferred mixture inorganic filler.
As inorganic filler, aluminium hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicates, magnesium silicate, calcium oxide, magnesium oxide, aluminium oxide, aluminium nitride, aluminium borate whisker, boron nitride, crystalline silica, amorphous silica, sb oxide etc. can be enumerated.In order to improve heat conductivity, be preferably aluminium oxide, aluminium nitride, boron nitride, crystalline silica, amorphous silica etc.For adjustment melt viscosity and the thixotropic object of imparting, be preferably aluminium hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicates, magnesium silicate, calcium oxide, magnesium oxide, aluminium oxide, crystalline silica, amorphous silica etc.In addition, in order to improve moisture-proof, aluminium oxide, silicon dioxide, aluminium hydroxide, sb oxide is preferably.
Relative to the total weight of cement layers 12, above-mentioned amount of filler is preferably more than 5 % by weight and less than 90 % by weight, is more preferably more than 35 % by weight and less than 70 % by weight.When blend amount is more, easily causes the lower degradation problem of the rising of the storage modulus of cement layers 12, zygosity decline, the remaining electrical characteristic caused in space, be thus particularly preferably less than 90 % by weight.In addition, the proportion of filler is preferably 1g/cm 3~ 10g/cm 3.
< adhesive phase (13) >
The composition of adhesive phase 13 is not particularly limited, if having not produce when cutting with the stripping of cement layers 12, do not produce chip to come off etc. bad degree retentivity or have and easily carry out the characteristic with the stripping of cement layers 12 when picking up.In order to improve the pick after cutting, adhesive phase 13 preferably has radiation-curable, is preferably the material that easy and cement layers 12 is after hardening peeled off.
Such as, the polymer preferably obtained containing addition reaction occurs the compound (A) at least a kind of compound (B) making to be selected from PIC class, melamine/formaldehyde resin and epoxy resin and molecule with the radiation-curable carbon-to-carbon double bond of iodine number 0.5 ~ 20.Herein, radioactive ray are the ionization such as the such light of ultraviolet or electron ray property radioactive ray.
The compound (A) of one of the main component as adhesive phase 13 is described.
The import volume of the radiation-curable carbon-to-carbon double bond of compound (A) counts 0.5 ~ 20 with iodine number, is preferably 0.8 ~ 10.When iodine number is more than 0.5, the effect of the bonding force after radiation exposure can be reduced, if iodine number is less than 20, the mobility of the adhesive then after radiation exposure is abundant, fully can obtain the element gap after extending, therefore, it is possible to suppress the image recognition of each element when picking up to become the such problem of difficulty.In addition, compound (A) self has stability, easily manufactures.
Compound (A) glass transition temperature is preferably-70 DEG C ~ 0 DEG C, is more preferably-66 DEG C ~-28 DEG C.If glass transition temperature Tg is more than-70 DEG C, then the thermal endurance for the heat caused by radiation exposure is enough, if be less than 0 DEG C, then fully obtains the effect that the semiconductor chip after the cutting in the wafer preventing surface state coarse disperses.
Above-claimed cpd (A) can be manufactured by any means, such as, use acrylic copolymer and there is the material of compound of radiation-curable carbon-to-carbon double bond, or the acrylic copolymer making to have functional group or the methacrylic copolymer (A1) with functional group are with have can with the functional group of its functional group reactions and the material that reacts and obtain of the compound (A2) with radiation-curable carbon-to-carbon double bond.
The molecular weight of compound (A) is preferably 300,000 ~ about 1,000,000.When being less than 300,000, the cohesiveness that radiation exposure causes is less, and when cutting wafer, easy producing component deviation, is difficult to carry out image recognition sometimes.In order to prevent the deviation of this element as far as possible, molecular weight is preferably more than 400,000.In addition, if molecular weight is more than 1,000,000, then, when synthesizing and when applying, likely there is gelation.In addition, the molecular weight in the present invention is the weight average molecular weight based on polystyrene conversion.
In addition, when compound (A) has the OH base of hydroxyl value 5 ~ 100, the bonding force after radiation exposure can be reduced, thus further reduce the danger of pickup error, because of but preferably.In addition, compound (A) preferably has the COOH base that acid number is 0.5 ~ 30.Herein, when the hydroxyl value of compound (A) is too low, the decline effect of the bonding force after radiation exposure is insufficient, time too high, there is the trend of the mobility of the adhesive after damaging radiation exposure.In addition, when acid number is too low, the improvement effect of adhesive tape restoration is insufficient, time too high, there is the trend damaging the mobility of adhesive.
Next, the compound (B) of another main component as adhesive phase is described.
Compound (B) is at least a kind of compound be selected from PIC class, melamine/formaldehyde resin and epoxy resin, can be used alone or combine two or more use.This compound (B) plays a role as crosslinking agent, by as the result of reacting with compound (A) or base material film and the cross-linked structure obtained, after adhesive coating, can improve with the cohesiveness of compound (A) and (B) adhesive that is main component.
As the addition of compound (B), relative to compound (A) 100 weight portion, be preferably 0.1 ~ 10 weight portion, be more preferably 0.4 ~ 3 weight portion.When this amount is less than 0.1 weight portion, there is cohesiveness and improve the insufficient trend of effect, during more than 10 weight portion, in the mixture and coating operations of adhesive, curing reaction carries out hastily and forms cross-linked structure, thus has the trend of damaging workability.
In addition, in adhesive phase 13, Photoepolymerizationinitiater initiater (C) is preferably comprised.
The Photoepolymerizationinitiater initiater comprised in adhesive phase 13 (C) is not particularly limited, existing known Photoepolymerizationinitiater initiater can be used.As the addition of Photoepolymerizationinitiater initiater (C), relative to compound (A) 100 weight portion, be preferably 0.01 ~ 5 weight portion, be more preferably 0.01 ~ 4 weight portion.
In addition, as required, can mixture tackifier, bonding conditioning agent, surfactant etc., or other modification agent of mixture and conventional composition.The thickness of adhesive phase 13 is not particularly limited, but is generally 2 μm ~ 50 μm.
< base material film (14) >
As base material film 14, preferably there is radioactive ray permeability, specifically, usual use plastics, rubber etc., as long as then limit especially through radioactive ray, but when utilizing Ultraviolet radiation to make radiation solidifying adhesive solidify, material that light transmission is good can be selected as its base material.
As the example of the polymer can selected as such base material, polyethylene can be enumerated, polypropylene, ethylene-propylene copolymer, PB Polybutene-1, poly-4-methylpentene-1, vinyl-vinyl acetate copolymer, ethylene-ethyl acrylate copolymer, ethylene-methyl acrylate copolymer, ethylene-acrylic acid copolymer, the homopolymers of the alpha-olefins such as ionomer or copolymer or their mixture, PETG, Merlon, the engineering plastics such as polymethyl methacrylate, polyurethane, styrene-ethylene-butadiene or amylene analog copolymer, thermoplastic elastomer (TPE) and their mixtures such as polyamide-polyol copolymer.
In addition, in order to strengthen element gap, be preferably the material that constriction (propagated bad the causing of the power produced when making base material film 14 radiated entends produces locality elongation) is as far as possible little, polyurethane can be exemplified, define the styrene-ethylene-butadiene of molecular weight and styrene-content or amylene analog copolymer etc., in order to prevent elongation when cutting or flexure, effective when using crosslinked base material film 14.From the view point of strength elongation characteristic, radioactive ray permeability, it is suitable that the thickness of base material film 14 is generally 20 μm ~ 300 μm.
In addition, to base material film 14 with coating radiation-curable opposite side surface, adhesive phase 13 side carry out fold processing or lubricant application time, there is the effect such as constriction of the base material film 14 that prevents from luming, prevent, because of but preferred, wherein, the friction of above-mentioned dicing tape when preventing constriction by making the radiated entends of the dicing tape being formed with adhesive phase 13 on base material film 14 and fixture reduces and obtains.
The manufacture method > of < semiconductor wafer processing adhesive tape
The manufacture of above-mentioned semiconductor wafer processing adhesive tape 10 is carried out according to the operation shown in Fig. 2.
First, conveying support film 11 (steps A 1), then carry out following printing process (steps A 2): to the support film 11 transferred out, use the cement of the composition containing above-mentioned formation cement layers 12 to carry out silk screen printing or intaglio printing, form cement layers 12.
Next, the drying process (steps A 3) of cement layers 12 drying making to print out is carried out.
Then, carry out following bonding process (steps A 4): the face relative with support film 11 dicing tape 15 being formed with adhesive phase 13 on base material film 14 being laminated to the cement layers 12 formed on support film 11, cement layers 12 is contacted with adhesive phase 13, makes semiconductor wafer processing adhesive tape 10.
And then, semiconductor wafer processing adhesive tape 10 is finally batched into roll (steps A 5).
Fig. 3 illustrates the concept map utilizing such manufacture method to manufacture the manufacturing installation 30 of semiconductor wafer processing adhesive tape 10.
This manufacturing installation 30 be configured to be arranged in sequence with conveying support film 11 conveyer 31, carry out printing process printing machine 32, carry out drying process drying oven 35, carry out the sticking part 36 of bonding process, batch the coiling machine 38 of semiconductor wafer processing adhesive tape 10.
In the following description, the structure of manufacturing installation 30 is described, and the process of each operation of manufacture method of the semiconductor wafer processing adhesive tape 10 employing manufacturing installation 30 is described.
[steps A 1 (conveying operation)]
Conveyer 31 keeps the support film 11 of roll, along with the progress of manufacturing operation, carries support film 11 successively from this conveyer 31.The support film 11 transferred out from this conveyer 31 is sent to the printing machine 32 carrying out printing process.
[steps A 2 (printing process)]
Printing machine 32 with on film 11, utilizes printing process to form cement layers 12 in support.On the support film 11 sent into by this printing machine 32, form multiple cement layers 12 of the size being substantially equal to or being greater than semiconductor wafer intermittently.So-called " being substantially equal to " also comprises the size of the size being less than semiconductor wafer herein, but represents the size that at least can cover the whole chips split from this semiconductor wafer.
In printing process, use cement as ink, form the cement layers 12 of the shape conformed to the size of semiconductor wafer." shape conformed to the size of semiconductor wafer " is preferably round-shaped, if there is datum level (orientation flat) or notch in the semiconductor wafer, if then comprise can be corresponding with its shape shape and at least there is the polygon-shaped of the area of bond semiconductor chip.
Like this, by printing process, form the cement layers 12 of the shape conformed to the size of semiconductor wafer, thereby, it is possible to cement layers 12 is cut into the operation of wafer size after omitting.
That is, in this manufacture method, do not need to perform process cement layers 12 being cut into the such cut-out operation of the shape that conforms to the size of semiconductor wafer.Thereby, it is possible to prevent from producing incised wound in cement layers 12 or support film 11, therefore, it is possible to prevent the foreign matter caused by the generation of hurting from remaining, the quality of product can be improved.In addition, owing to only printing required part, therefore, it is possible to significantly cut down the loss of the material used in cement layers 12.
As the printing process of printing machine 32, silk screen printing, intaglio plate (gravure) printing, letterpress, intaglio plate (intaglio) printing, ink jet printing etc. can be used, the printing process of the thickness that can obtain the cement layers 12 expected can be selected.
In above-mentioned printing process, silk screen print method and intaglio plate (gravure) print process are suitable for the pattern printing of semiconductor wafer processing adhesive tape 10, in this printing process, carry out silk screen printing or intaglio printing, form cement layers 12.
About silk screen printing, although depend on the solid constituent ratio of jointing material (cement) or the mesh size of silk-screen plate, but usually can carry out the printing of the thickness of several μm ~ 100 μm, can the print thickness of every 1 time be adjusted larger, therefore, it is possible to carry out the high manufacture of productivity ratio.
As printing machine or the mode of printing of silk screen printing, there is one chip printer machine, the Reel-to-reel type of one chip printer, the cylinder printing machine of Reel-to-reel type can be carried out continuously, but, if use cylinder printing machine, then compared with common one chip screen process press, can high speed printing be carried out, thus can enhance productivity.
About intaglio printing, the coating thickness of every 1 time is about several μm, can with rotary and manufacture cement layers 12 at high speed, therefore, when with the thin cement layers 12 (several μm) of thickness for object, be favourable to productivity ratio.
The printing process of silk screen printing or intaglio printing can be selected according to the thickness of the cement layers 12 that will be formed, desirably, when the thickness of cement layers 12 is several μm ~ about 10 μm, select intaglio printing, when the thickness of knitting layer is more than 5 ~ 10 μm, select silk screen printing.
The cement (wafer joint cement) used in printing process employs the material dissolves comprised in above-mentioned cement layers 12 or the material being scattered in solvent.Solvent is not particularly limited, is preferably cyclohexanone or methylethylketone.
By 5 ~ 80 % by weight these solvents of mixing, the viscosity under the atmosphere temperature when printing of cement is adjusted to optimum scope.
By from conveyer 31, through printing machine 32 until the scope (region) of the entrance of drying oven 35 is configured in Temperature and Humidity Control portion 33, in Temperature and Humidity Control portion 33, can utilize humiture reconditioner 34 make temperature and humidity keep setting.About the temperature and humidity in this Temperature and Humidity Control portion 33, suitable temperature and humidity can be selected according to the kind etc. of the composition of cement or solvent.
In addition, as long as in the Temperature and Humidity Control portion that is partly arranged at 33 that major general carries out printing, but preferred by being partly arranged in Temperature and Humidity Control portion 33 from the part of carrying out printing to drying oven 35.But, from the view point of providing high-quality product, the apparatus structure shown in Fig. 3 is preferably utilized to manufacture, but due to solvent kind contained in the indoor environment of drying oven length, manufacturing site location and adhesive, situation is different, therefore, in manufacturing equipment, Temperature and Humidity Control portion 33 or humiture reconditioner 34 must not necessarily be had.
The viscosity B coefficent of version separation property, thickness and precision or cement when consideration silk screen printing or intaglio printing, preferably suppresses the evaporation rate of solvent contained in cement as far as possible.But, be mixed in cement and too much there is slow curing (Rather-late do) solvent that acts on time, the productivity ratio in drying process can be caused to decline or equipment cost rises, therefore, carry out the temperature and humidity management of printing process atmosphere, carry out the control of evaporation rate.By this temperature and humidity management, be set to less than 10 DEG C, be preferably set to less than 5 DEG C, preferably the vapour pressure of solvent contained in cement is set to below 100mmHg, is more preferably below 50mmHg, is particularly preferably below 30mmHg.By carrying out such temperature and humidity management, the evaporation rate of solvent contained in cement can be suppressed, the stability of the viscosity of cement can be realized.
When utilizing screen-printing deposition cement, cement layers 12 has characteristic surface and cross sectional shape, therefore, compared with the product utilizing the painting method based on common coating machine or the cross section cutting technique based on cutting tool to produce, favourable qualitatively.
In addition, when silk screen printing, be applicable to the viscosity of cement to be set to below 6Pas, be preferably set to 0.05Pas ~ 5Pas (more than 0.05Pas and below 5Pas).Such as, when the viscosity of cement is less, when being less than the degree of 0.05Pas, cement likely can not carry out good printing through silk-screen plate, thus should be noted that.
When intaglio printing, be applicable to the viscosity of cement to be adjusted to below 10Pas, be preferably adjusted to 0.01Pas ~ a few Pas (more than 0.01Pas and a few below Pas).This is because when printing, cement is difficult to be separated from version body, and the transfer printing producing cement in support film 11 is uneven, brings impact to the quality (pin hole etc.) of printing.
In addition, in intaglio printing, owing to being similarly pattern printing with silk screen printing, therefore, it is possible to expect and the identical effect described in silk screen printing.
[steps A 3 (drying process)]
The support film 11 being formed with cement layers 12 by printing process is sent to drying oven 35, and this drying oven 35 carries out the drying process making solvent evaporates contained in cement layers 12.
In drying process, according to the composition of cement or the kind etc. of solvent, suitably select the temperature in drying oven 35 or drying time, about preferably making cement layers 12 dry a few minutes with the temperature of normal temperature ~ 200 DEG C.
[steps A 4 (bonding process)]
Make the dried support film 11 of cement layers 12 be sent to sticking part 36 by drying process, sticking part 36 carries out the bonding process that support film 11 is fitted with the dicing tape 15 being formed with adhesive phase 13 on base material film 14.Cement layers 12, by printing process, has become the shape conformed to the shape of semiconductor wafer, then can carry out bonding process after drying process.Thereby, it is possible to shorten the length of production line.
In bonding process (sticking part 36), support film 11 and dicing tape 15 are clipped between roller 37, the pressure specified is applied between roller 37, in the mode that the cement layers 12 formed on support film 11 contacts with the adhesive phase 13 of dicing tape 15, support film 11 and dicing tape 15 are fitted.Pressure between roller 37 can suitably set, but preferably carries out under line pressure 1MPa ~ 5MPa.Thus, the semiconductor wafer processing adhesive tape 10 having stacked support film 11, cement layers 12, adhesive phase 13 and base material film 14 is successively completed.
[steps A 5 (coiling process)]
Utilize coiling machine 38 to be batched by the semiconductor wafer processing adhesive tape 10 after completing, make semiconductor wafer processing adhesive tape 10 become roll.
According to above execution mode, in printing process, use the cement implementing viscosity adjustment, carry out silk screen printing or intaglio printing, form cement layers 12, therefore, the waste not needing part to cause because removing cement layers 12 can being eliminated, saving cement use amount.
In addition, according to the present embodiment, do not need the cutting action or not part of cement layers 12, therefore, it is possible to simplify the manufacturing process of semiconductor wafer processing adhesive tape, and then the foreign matter that can prevent the generation because hurting from causing remaining, improves the quality of products.
About the simplification of manufacturing process, also there is following effect.
Namely, in existing manufacture method, as illustrated in Instructions Page 2 the 1st section, when there is the restriction etc. of production line length, need the laminating of precut, the spacer through the formation of cement layers, cement layers, the change of production line, spacer stripping ... such operation.In this case, when making cement layers and spacer is fitted, in order to improve adaptation, the scope being heated to about 40 ~ 100 DEG C in warm-up mill is needed to carry out laminating process, then, need to fit adhesive tape (dicing tape 15) after stripping spacer.
On the other hand, in the bonding process of present embodiment, due to make cement layers 12 directly and adhesive phase 13 fit, thus adaptation is high, can not use warm-up mill and fit at normal temperatures.Therefore, according to the present embodiment, production line length can not only be shortened, and not need warm-up mill equipment required in existing manufacture method, thus can suppression equipment investment.
Raising by the product quality suppressing the generation of incised wound to bring is described in detail.
Fig. 4 illustrates the cross section of the cutting/wafer joint tape 50 utilizing existing method for making to produce.
According to Fig. 4, in cutting/wafer joint tape 50, the peripheral part of cement layers 12 is pre-cut cutter and generally perpendicularly cuts, and forms incised wound 40 in support membrane 11.Herein, " incised wound (40) " refers to the surface of cement layers 12 side at support film 11, imports the state of cut channel with recessed row.Under these circumstances, when adhesive joint oxidant layer 12 is with dicing tape 15, along with the formation of incised wound 40, likely at the remaining foreign matter of this part, or produce space (space) at the peripheral part of cement layers 12.
On the other hand, as in this embodiment, the viscosity of cement is adjusted to optimized scope and (is preferably 0.05Pas ~ 5Pas when silk screen printing, 0.01Pas ~ a few Pas is preferably) when intaglio printing, control the humiture of printing environment, when utilizing silk screen printing or intaglio printing to form cement layers 12, as shown in Figure 1, incised wound 40 can not be formed in support film 11, therefore, rake 12a is formed at the peripheral part (side edge part) of cement layers 12, when carrying out cross-section to it, this rake 12a gently tilts, between cement layers 12 and adhesive phase 13, adaptation good (height) and not easily produce space.
In addition, when the viscosity of cement is larger, (when when silk screen printing being such as about 6Pas), as shown in Figure 5, at the peripheral part of cement layers 12, thickness increases slightly sometimes, when carrying out cross-section to it, be formed with protuberance 12b in lobe shape slightly (in the scope of the inner side of about 1mm from outer circumference end, being+several ~ about 30% relative to the thickness contacted with semiconductor wafer).Under these circumstances, the peripheral part of cement layers 12 and the closely sealed raising of interlayer of adhesive phase 13, have the effect of the lamination can implementing cement layers 12 and dicing tape 15 well.
In addition, in the inner side (central side) of the peripheral part of the cement layers 12 printed out, utilize silk-screen plate, can suppress for thickness and precision no problem in practical.Therefore, semiconductor wafer, after having peeled off support membrane 11, is fitted with the even surface side of cement layers 12, not by the impact caused by the protuberance 12b of the peripheral part of cement layers 12.But, from the view point of the pick of semiconductor chip, preferably cement is printed at least be greater than the size that can cover the whole chips split from this semiconductor wafer, in the mode that the forming range of the protuberance 12b of cement layers 12 does not overlap with semiconductor chip, the printing area of cement layers 12 is set to (design) slightly larger than semiconductor wafer sizes.
< the 2nd execution mode >
Next, the 2nd execution mode is described.
It should be noted that, the 2nd execution mode has the structure substantially identical with above-mentioned 1st execution mode, below, marks identical label and omits the description, be mainly described different piece the part with same structure.
Fig. 6 is the end view of the semiconductor wafer processing adhesive tape 10 that present embodiment is shown.
In the present embodiment, printing process is also utilized to form adhesive phase 13.
The manufacture of the semiconductor wafer processing adhesive tape 10 of present embodiment is carried out according to the operation shown in Fig. 7.
In the operation of Fig. 7, substitute the bonding process (steps A 4) of the dicing tape 15 in the operation shown in lamination Fig. 2, and carry out the bonding process (steps A 11) of the dicing tape 15 after the printing of lamination circle.
In the dicing tape 15 used in the above-mentioned bonding process (steps A 11), as the adhesive phase 13 of circle resin molding base material film 14 being formed the size being substantially equal to or being greater than annular frame.So-called " roughly the same " also comprises the size of the size (external diameter) being less than annular frame herein, but represents the internal diameter being at least greater than annular frame and the size that can contact with annular frame.
In this bonding process, become concentrically ringed mode to make the center of the cement layers 12 being formed as circle consistent with the center of the adhesive phase 13 being formed as circle, support film 11 and dicing tape 15 are fitted.
The adhesive phase 13 of dicing tape 15 can be formed as the circle in the same size with the cement layers 12 being formed as circle, but is preferably formed to the circle larger than cement layers 12.
If the circle making adhesive phase 13 be formed as larger than cement layers 12, then exist cement layers 12 in the part of laminated semiconductor wafer, in the part of laminating annular frame, there is not cement layers 12 and only there is adhesive phase 13.Usually, cement layers 12 not easily be attached body and peel off, thereby, it is possible to make annular frame and adhesive phase 13 fit, during tape stripping after a procedure, not easily produced and such effect remained to the stick of annular frame.
This dicing tape 15 manufactures according to the operation identical with the operation (steps A 1 ~ A3) forming cement layers 12 on support film 11.
That is, dicing tape 15 forms the printing process of adhesive phase 13 by utilizing printing process on base material film 14 and the drying process of adhesive phase 13 drying printed out is manufactured.
About the adhesive used in printing process (cutting adhesive), use the material dissolves comprised in above-mentioned adhesive phase 13 or the material being scattered in solvent and obtaining.
Solvent is not particularly limited, but preferably the viscosity of adhesive is prepared as 0.05 ~ 5Pas, more preferably 0.05 ~ 1Pas.
In addition, by the temperature and humidity management under printing process atmosphere, be set to less than 10 DEG C, being preferably set to is less than 5 DEG C, preferably the vapour pressure of solvent contained in adhesive is set to below 100mmHg, is more preferably below 50mmHg, is particularly preferably below 30mmHg.Like this, by carrying out temperature and humidity management, the evaporation rate of solvent contained in adhesive can be suppressed, the stability of the viscosity of adhesive can be realized.
In addition, when carrying out temperature and humidity management to printing process atmosphere, according to circumstances, likely producing condensation, the countermeasure such as to be preferably implemented as follows: heat insulation material is arranged to the wall between Temperature and Humidity Control portion 33 and drying oven 35; Or from after printing to drying oven 35, periodically carry out temperature and humidity management.
Like this, for dicing tape 15, also formed the adhesive phase 13 of the shape conformed to the size of annular frame by printing process, thus, to the operation that adhesive phase 13 cuts after can omitting, can prevent from producing incised wound in adhesive phase 13 or base material film 14.Thereby, it is possible to prevent the foreign matter caused by the generation of hurting from remaining, can improve the quality of products.In addition, owing to only printing required part, the loss of the material used in adhesive phase 13 can thus significantly be cut down.
In existing method for making, when the multilayer joint tape that manufacture cutting/wafer joint tape is such, after producing wafer joint tape, cement layers is cut into semiconductor die sheet, next, fit with dicing tape, then dicing tape side is cut into outer peripheral face, produce multilayer joint tape.In this case, whenever stacked junction film, then need cutting action, thus need multiple operation.
On the other hand, as in this embodiment, form cement layers 12, adhesive phase 13 by printing process, thereby, it is possible to utilize easy operation to manufacture, the production efficiency making multiple stratification adhesive tape can be improved.
< the 3rd execution mode >
Next, the 3rd execution mode is described.
In addition, the 3rd execution mode has the structure substantially identical with above-mentioned 1st execution mode, below, marks identical label and omits the description, be mainly described different piece the part with same structure.
Fig. 8 is the end view of the semiconductor wafer processing adhesive tape 10 that present embodiment is shown.
The semiconductor wafer processing adhesive tape 10 of present embodiment only has cement layers 12.
The manufacture of the semiconductor wafer processing adhesive tape 10 of present embodiment is carried out according to the operation shown in Fig. 9.
In the operation of Fig. 9, substitute the bonding process (steps A 4) of the dicing tape of the operation shown in lamination Fig. 2, and carry out the bonding process (steps A 21) of lamination coverlay 16.
In addition, as coverlay 16, the film be made up of the material that can use in support film 11 can be used.
In addition; in above-mentioned 1st ~ 3rd execution mode; as the example of semiconductor wafer processing with adhesive tape 10; show cutting/wafer joint tape or wafer joint tape; but, can apply the present invention in other dicing tape or the adhesive tape manufacturing process processing/protect purposes in the back grinding procedure of grinding back surface of semiconductor wafer for the protection of surface protection tape of the circuit pattern forming surface (wafer surface) of semiconductor wafer etc., various semiconductor wafer.
Further there is illustrated the method using rectangular support film 11 to manufacture semiconductor wafer processing adhesive tape 10 continuously, but also can apply the present invention to the method for the semiconductor wafer processing adhesive tape 10 of manufacture 1 chip semiconductor wafer.
Next, the embodiment of carrying out in order to clear and definite effect of the present invention is described in detail, but the invention is not restricted to these embodiments.
Embodiment 1
[manufacture of adhesive tape]
(1) manufacture of adhesive tape 1
Manufacture the weight-average molecular weight 800,000 that is made up of Isooctyl acrylate monomer, acrylic acid 2-hydroxyl ethyl ester and methyl methacrylate and glass transition temperature is the acrylic copolymer compound of-30 DEG C.
Then, for this copolymer compound of 100 weight portions, add the trimethylol-propane trimethacrylate of 20 weight portions as the compound with radiation-curable carbon-to-carbon double bond, add polyisocyanate compounds Coronate L (the Japanese polyurethane Co., Ltd system of 7 weight portions, trade name) as curing agent, in addition, the Irgacure184 (Japanese Ciba-Geigy Co., Ltd trade name) adding 5 weight portions as Photoepolymerizationinitiater initiater, from the adhesive obtaining radiation-curable.
This adhesive is coated on the base material film that the thickness be made up of acrylic resin and hydrogenated styrene-butadiene copolymer is 100 μm, then dry in hot-air drying stove, obtaining is the adhesive tape 1 of the adhesive phase of 10 μm and the duplexer of base material film as dried thickness.
(2) manufacture of adhesive tape 2
Manufacture the weight-average molecular weight 800,000 that is made up of acrylic acid ester in the different ninth of the ten Heavenly Stems, acrylic acid 2-hydroxyl ethyl ester and methyl methacrylate and glass transition temperature is the acrylic copolymer compound of-30 DEG C.
Then, as curing agent, adhesive is obtained to the polyisocyanate compounds Coronate L (Japanese polyurethane Co., Ltd system, trade name) that this copolymer compound of 100 weight portions adds 9 weight portions.
In the same manner as adhesive tape 1, this adhesive is coated on the base material film identical with adhesive tape 1 and drying, obtains adhesive tape 2.
[preparation of cement]
(1) preparation of cement 1
In the following constituent formed, the methylethylketone of adding 10 mass parts carries out stirring and mixing, carry out vacuum suction, obtain cement 1, described constituent comprises: as the 30 parts by weight of bisphenol F type epoxy resin (use epoxy resin equivalent 160, Dongdu change into the trade name YD-8170C that Co., Ltd manufactures) of epoxy resin, the cresol novolak type epoxy resin (use epoxy resin equivalent 210, Dongdu change into the trade name YDCN-703 that Co., Ltd manufactures) of 10 weight portions; As the phenol resol resins (using the trade name Plyophen LF2882 that large Japanese ink chemical industry Co., Ltd manufactures) of 27 weight portions of the curing agent of epoxy resin; The acrylic copolymer (using the weight average molecular weight 700,000, Tg based on gel permeation chromatography to be the trade name SG-708-6 that 4 DEG C of Nagasechemtex Co., Ltds manufacture) of 28 weight portions; As the imidazoles curing accelerator (using four countries to change into the CUREZOL 2PZ-CN of Industrial Co., Ltd's manufacture) of 0.1 weight portion of curing accelerator; The silica filler of 132 weight portions (uses Admafine Co., Ltd system, S0-C2 (proportion: 2.2g/cm 3)); And 0.25 weight portion as silane coupler, (use Japan Unicar Co., Ltd manufacture trade name A-189).
Utilize Brookfield viscometer (eastern machine industry TVB-10) to measure the viscosity of obtained cement paint, consequently, the viscosity at 5 DEG C is 5.0Pas, and the viscosity at 25 DEG C is 4.5Pas.
(2) preparation of cement 2
Except adding the methylethylketone of 50 mass parts, obtain cement 2 in the same manner as cement 1.Measure the viscosity of the cement paint obtained, consequently, the viscosity at 5 DEG C is 1.0Pas, and the viscosity at 25 DEG C is 0.05Pas.
(3) preparation of cement 3
Except adding the methylethylketone of 60 mass parts, obtain cement 3 in the same manner as cement 1.Measure the viscosity of the cement paint obtained, consequently, the viscosity at 5 DEG C is 0.04Pas.
(4) preparation of cement 4
Except adding the methylethylketone of 8.0 mass parts, obtain cement 4 in the same manner as cement 1.Measure the viscosity of the cement paint obtained, consequently, the viscosity at 5 DEG C is 6.0Pas.
(5) preparation of cement 5
Except the interpolation methylethylketone of 5 mass parts, obtain cement 5 in the same manner as cement 1.Measure the viscosity of the cement paint obtained, consequently, the viscosity at 5 DEG C is 11.0Pas.
(6) preparation of cement 6
Except adding the methylethylketone of 80 mass parts, obtain cement 5 in the same manner as cement 1.Measure the viscosity of the cement paint obtained, consequently, the viscosity at 5 DEG C is 0.01Pas.
[manufacture of sample]
(1) embodiment 1
As in the PET film (thickness 25 μm) of support film, utilize the one chip silk screen print method of volume to volume type, print cement 1 in the mode of diameter phi 320mm, dried print thickness 20 μm, spacing 60mm, form cement layers.
About the temperature etc. of printing process, be 5 DEG C, 40%RH by the control climate of Printing Department, make the vapour pressure of the solvent in Temperature and Humidity Control portion be about 30mmHg.
After utilizing printing process to form cement layers, in drying oven, carry out the drying process of dry about 1 minute at the temperature of 150 DEG C.
Then, carry out, with the bonding process of the other adhesive tape 1 manufactured of line pressure 2MPa laminating, producing semiconductor wafer processing adhesive tape.
(2) embodiment 2
Except using cement 2 alternative joints agent 1, manufacture semiconductor wafer processing adhesive tape similarly to Example 1.
(3) embodiment 3
Except using adhesive tape 2 to substitute except adhesive tape 1, manufacture semiconductor wafer processing adhesive tape similarly to Example 1.
(4) embodiment 4
Except using adhesive tape 2 to substitute except adhesive tape 1, manufacture semiconductor wafer processing adhesive tape similarly to Example 2.
(5) comparative example 5
Except using cement 3 alternative joints agent 1, manufacture semiconductor wafer processing adhesive tape similarly to Example 1.
(6) embodiment 6
Except using cement 4 alternative joints agent 1, manufacture semiconductor wafer processing adhesive tape similarly to Example 1.
(7) embodiment 7
Except the temperature of printing process being set to room temperature (25 DEG C), manufacture semiconductor wafer processing adhesive tape similarly to Example 1.
(8) embodiment 8
Except the temperature of printing process being set to room temperature (25 DEG C), manufacture semiconductor wafer processing adhesive tape similarly to Example 2.
(9) embodiment 9
As in the PET film (thickness 25 μm) of support film, utilize woodburytype, print cement 2 in the mode of diameter phi 320mm, dried print thickness 5 μm, spacing 40mm, form cement layers.
About the temperature etc. of printing process, be 5 DEG C, 40%RH by Printing Department's Environmental adjustments, make the vapour pressure of solvent be about 30mmHg.
After utilizing printing process to form cement layers, in drying oven, carry out the drying process of dry about 1 minute at the temperature of 150 DEG C.
Then, carry out, with the bonding process of the other adhesive tape 2 manufactured of line pressure 2MPa laminating, producing semiconductor wafer processing adhesive tape.
(10) embodiment 10
Except using cement 1 alternative joints agent 2, manufacture semiconductor wafer processing adhesive tape similarly to Example 9.
(11) comparative example 11
Except using cement 5 alternative joints agent 2, manufacture semiconductor wafer processing adhesive tape similarly to Example 9.
(12) embodiment 12
Except using cement 6 alternative joints agent 2, manufacture semiconductor wafer processing adhesive tape similarly to Example 9.
[evaluation of sample (cement layers)]
(1) fracture strength, elongation at break
For the sample of width 10mm, length 30mm, thickness 20 μm, use cupping machine (modern field makes made digital load cell SV55), stress, strain curve is measured with chuck spacing 20mm, draw speed 0.5m/ minute, thus, fracture strength, the elongation at break of 25 DEG C of the cement layers of B-stage state is obtained by following formula.
Sectional area (the m of fracture strength (Pa)=maximum intensity (N)/sample 2)
Elongation at break (%)=(between the chuck of the sample during fracture length (mm)-20)/20 × 100
(2) modulus of elasticity (storage modulus)
Dynamic viscoelastic device (Rheology Inc., DVE-V4) is used to measure the storage modulus (scratch: length 20mm, width 4mm, thickness 75 μm, temperature range-30 ~ 100 DEG C, programming rate 5 DEG C/min, stretch mode, 10Hz or 900Hz, automatically dead weight) of the cement layers of B-stage state.
(3) cross sectional shape of cement layers
Utilize slicing machine or razor tool, carry out cross section cutting to Printing Department, the microscope (TM-1000) utilizing Hitachi High-Technologies to manufacture, carries out cross-section to this cross section, measures thickness, size or shape etc.
(4) evaluation result
(4.1) embodiment 1
For the sample of embodiment 1, utilize silk screen printing, form cement layers 1.
Fracture strength, the elongation at break of the cement layers 1 of (before bonding process) after mensuration drying process, consequently, fracture strength is 5.0MPa, and elongation at break is 15%.
After drying process, the modulus of elasticity of the cement layers of (before bonding process) is 2500MPa under 25 DEG C/10Hz, is 8000MPa under 25 DEG C/900Hz.
The cement layers 1 of (before bonding process) after cutting (rip cutting) drying process, carries out microscopic examination to the cross section of peripheral part, found that outer circumferential side edge gently tilts.Specifically, relative to when overlooking cement layers 1 when target print diameter 320mm, actual printing diameter is 321mm.
(4.2) embodiment 9
For the sample of embodiment 9, utilize intaglio printing, form cement layers 9.
Fracture strength, the elongation at break of the cement layers 9 of (before bonding process) after mensuration drying process, consequently, fracture strength is 3MPa, and elongation at break is 15%.
After drying process, the modulus of elasticity of the cement layers 9 of (before bonding process) is 2500MPa under 25 DEG C/10Hz, is 8000MPa under 25 DEG C/900Hz.
The cement layers 9 of (before bonding process) after cutting (rip cutting) drying process, carries out microscopic examination to the cross section of peripheral part, found that outer circumferential side edge gently tilts.Specifically, relative to when overlooking cement layers 9 when target print diameter 320mm, actual printing diameter is 321mm.
(4.3) other
The manufacturing condition or characteristic (evaluation result) etc. that comprise the cement layers of the sample of above-described embodiment 1,9 are shown in Table 1.
In addition, in Table 1, about the evaluation of " thickness and precision ", for the embodiment 1 ~ 4 utilizing silk screen printing to form cement layers, 6 ~ 8, the sample of comparative example 5, it is 20 μm by the Thickness Design of its cement layers, the embodiment 9 ~ 10 utilizing intaglio printing to form cement layers, 12, in the sample of comparative example 11, it is 5 μm by the Thickness Design of its cement layers, when the thickness of the cement layers of reality be converged in relative to its design load (desired value) ± scope of 1.5 μm within, be evaluated as " zero (well) ", in this extraneous situation, be recited as "-".
[table 1]
[summary]
Utilizing silk screen printing to be formed in the sample of the embodiment 1 ~ 4,6 ~ 8 of cement layers, easy operation can be utilized to obtain good semiconductor wafer processing adhesive tape.
Especially, in embodiment 1 ~ 4, the viscosity due to cement is more than 0.05Pas and the temperature of below 5Pas, printing process is less than 10 DEG C, and therefore, the number of defect that the blocking that almost can't see silk-screen plate causes, confirms as printing rate of finished products and improve.
In addition, in embodiment 1 ~ 4,6 ~ 8, the thickness of cement layers can suppress in the scope of ± 1.5 μm in solid layer.
In addition, in embodiment 1 ~ 4,6 ~ 8, relative to existing technique (coating undertaken by coating machine), cement use amount declines to a great extent about 50%.
In embodiment 6, the viscosity of cement more than 5Pas, but can implement printing.In embodiment 6, when analysing and observe the peripheral part of cement layers, in lobe shape (in the scope of about 1mm from outer circumference end, being about 20% relative to the thickness contacted with wafer) slightly.In embodiment 6, avoid the laminating to semiconductor chip as far as possible because there is uneven thickness near peripheral part, about the part of the inner side of about 1mm from periphery, can be judged as that thickness and precision is within desired value ± 1.5 μm and be good, can apply in a flexible way as the cement layers of semiconductor chip.
Relative to these samples, in comparative example 5, the viscosity of cement is less than 0.05Pas, therefore, when printing the circumference of shape, the shape turned-down edge that then thickness is less the closer to side is produced significantly, and, when to silk-screen plate mounting cement, produce liquid turned-down edge, be therefore difficult to carry out good printing (being judged as not carrying out silk screen printing).
On the other hand, about the sample utilizing intaglio printing to form the embodiment 9 ~ 10,12 of cement layers, whole sample can obtain the printing of good cement layers.
In embodiment 9 ~ 10,12, in the same manner as silk screen printing, relative to existing technique (coating undertaken by coating machine), cement use amount declines to a great extent about 50%.
Relative to these samples, in comparative example 11, the viscosity of cement, greatly to 11Pas, at printing surface observable scratches, can not carry out good printing (being judged as not carrying out intaglio printing).
Embodiment 2
[manufacture of sample]
(1) embodiment 13 ~ 17
In the same manner as manufacturing the sample of embodiment 1, in the PET film as support film, utilize the one chip silk screen print method of volume to volume type to print cement, form cement layers.
In this printing process, as shown in table 2, to set manufacturing condition by each sample change viscosity of cement and the mode of dried print thickness (design thickness).Cement is identical with the composition of cement 1, only adjusts the blend amount of methylethylketone, controls viscosity.
Then, in the same manner as manufacturing the sample of embodiment 1, perform each process of drying process, bonding process, produce semiconductor wafer processing adhesive tape.
(2) embodiment 18 ~ 19
In the same manner as manufacturing the sample of embodiment 9, in the PET film as support film, utilize woodburytype to print cement, form cement layers.
At this printing process, also press shown in table 2 such, to set manufacturing condition by each sample change viscosity of cement and the mode of dried print thickness (design thickness).Cement is identical with the composition of cement 2, only adjusts the blend amount of methylethylketone, controls viscosity.
Then, in the same manner as manufacturing the sample of embodiment 9, perform each process of drying process, bonding process, produce semiconductor wafer processing adhesive tape.
(3) comparative example 20 ~ 22
Use the material identical with the sample of embodiment 1, form cement layers.
Specifically, on a front surface of the PET film (thickness 25 μm) as support film, utilize coating machine to be coated with cement, form cement layers for the time being, then, this cement layers is pre-cut as diameter phi 320mm, spacing 60mm.
In this operation, also as shown in table 2, to set manufacturing condition by each sample change viscosity of cement and the mode of dried print thickness (design thickness).Cement is identical with the composition of cement 1, only adjusts the blend amount of methylethylketone, controls viscosity.
Then, in the same manner as manufacturing the sample of embodiment 1, perform each process of drying process, bonding process, produce semiconductor wafer processing adhesive tape.
[evaluation of sample (cement layers)]
Utilize slicing machine or razor tool, to embodiment 13 ~ 17,18 ~ 19, the sample of comparative example 20 ~ 22 carries out cross section cutting, the microscope (TM-1000) utilizing Hitachi High-Technologies to manufacture carries out cross-section to the rake of this cement layers, measurement thickness and shape etc.
Herein, when carrying out cross-section, as shown in figure 11, about the rake 12a of the cement layers 12 when analysing and observe the peripheral part of knitting layer 12, if the thickness of rake 12a (distance of vertical direction) is " t ", the distance of the horizontal direction of rake 12a is " Δ R ", measure each distance, if the parameter representing the shape of the rake of cement layers is " Δ R/t ", calculate this parameter.
Each measured value of the thickness t of rake 12a and the distance, delta R of horizontal direction and the calculated value of form parameter Δ R/t are shown in Table 2.
[table 2]
[summary]
In the sample utilizing silk screen printing or intaglio printing to form the embodiment 13 ~ 17,18 ~ 19 of cement layers and the sample of comparative example 20 ~ 22 cement layers being coated with/being precut and is formed, when the rake of the cement layers to each sample carries out cross-section, according to its comparative result, for the sample of embodiment 13 ~ 17,18 ~ 19, be in the scope of 2 ~ 150 μm at the thickness t of cement layers, the number range of form parameter Δ R/t roughly meets the condition of following formula (1).
0.4≤ΔR/t≤100…(1)
Visible, in the sample of this embodiment 13 ~ 17,18 ~ 19, think that the adaptation of cement layers and adhesive phase is good, significantly inhibit the generation in space, meet the condition of formula (1) but useful.
Relative to these samples, in the sample of comparative example 20 ~ 22, do not meet the condition of formula (1), the adaptation of cement layers and adhesive phase is inferior to the sample of embodiment 13 ~ 17,18 ~ 19.
In addition, in the sample of embodiment 13 ~ 17,18 ~ 19, do not hurt (with reference to Figure 10) in support film, therefore, the foreign matters such as the remaining film dirt of incision part that can not cause at cutting tool, achieve the raising of product quality.
Utilizability in industry
The present invention is the manufacture method of semiconductor wafer processing adhesive tape support film being formed to cement layers, is especially suitably applied to the saving of the cement use amount realizing cement layers, the simplification (especially the reduction in cutting man-hour of cement layers) of manufacturing process and the raising of product quality.
Symbol description
10 semiconductor wafer processing adhesive tapes
11 support with film (the 1st resin molding)
12 cement layers
12a rake
12b protuberance
13 adhesive phases
14 base material films (the 2nd resin molding)
15 dicing tapes
16 coverlays

Claims (9)

1. a manufacture method for semiconductor wafer processing adhesive tape, is characterized in that, it comprises:
Printing process, to be substantially equal to or to be greater than the size of semiconductor wafer, on the 1st resin molding, silk screen printing or intaglio printing wafer joint cement, form cement layers thus; With
Drying process, makes described cement layers dry.
2. the manufacture method of semiconductor wafer processing adhesive tape according to claim 1, is characterized in that,
In described printing process, described cement layers is formed as the shape conformed to the size of described semiconductor wafer.
3. the manufacture method of semiconductor wafer processing adhesive tape according to claim 2, is characterized in that,
In described printing process, at least to cover the mode of the whole chips split from this semiconductor wafer, print described wafer joint cement.
4. the manufacture method of the semiconductor wafer processing adhesive tape according to any one in claims 1 to 3, is characterized in that,
Described manufacture method comprises following bonding process: to the face being formed with described cement layers of described 1st resin molding, be fitted in the dicing tape the 2nd resin molding being formed with the adhesive phase be made up of cutting adhesive, described cement layers is contacted with described adhesive phase.
5. the manufacture method of semiconductor wafer processing adhesive tape according to claim 4, is characterized in that,
In described bonding process, be used on described 2nd resin molding using be substantially equal to or be greater than cutting adhesive described in the size silk screen printing of annular frame or intaglio printing form described adhesive phase thus and the product obtained as described dicing tape.
6. a semiconductor wafer processing adhesive tape, it is formed by the manufacture method manufacture of following semiconductor wafer processing adhesive tape, and described manufacture method comprises:
Printing process, to be substantially equal to or to be greater than the size of semiconductor wafer, on the 1st resin molding, silk screen printing or intaglio printing wafer joint cement, form cement layers thus;
Drying process, makes described cement layers dry; With
Bonding process: to the face being formed with described cement layers of described 1st resin molding, be fitted in the dicing tape the 2nd resin molding being formed with the adhesive phase be made up of cutting adhesive, described cement layers is contacted with described adhesive phase,
The feature of described semiconductor wafer processing adhesive tape is,
The cross sectional view of the peripheral part of the described cement layers after described drying process is in gently tilting or lobe shape.
7. semiconductor wafer processing adhesive tape according to claim 6, is characterized in that,
To fit described dicing tape to the face being formed with described cement layers of described 1st resin molding, described cement layers contacts with described adhesive phase.
8. the semiconductor wafer processing adhesive tape according to claim 6 or 7, is characterized in that,
The thickness of its rake, in gently tilting, is set to t, the distance of horizontal direction is when being set to Δ R, meet the condition of formula (1) by the cross sectional view of the peripheral part of the described cement layers after described drying process,
0.4≤ΔR/t≤100…(1)。
9. the semiconductor wafer processing adhesive tape according to any one in claim 6 ~ 8, is characterized in that,
Incised wound is there is not near the peripheral part of the described cement layers of described 1st resin molding.
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