JP2011142253A - Adhesive film for semiconductor and method of manufacturing the same, and method of manufacturing semiconductor device, and semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an adhesive film for semiconductor and a method of manufacturing the same such that man-hours can be decreased and a broken piece of an adhesive layer is prevented from being mixed; to provide a semiconductor device that uses the adhesive film; and to provide a method of manufacturing the semiconductor device. <P>SOLUTION: The adhesive film for semiconductor includes a peeling base A; and a laminate, in a predetermined shape, composed of an adhesive layer disposed on the peeling base A and having a predetermined plane shape, and a pressure-sensitive adhesive layer formed covering the adhesive layer and coming into contact with the peeling base A at a periphery of the adhesive layer, a plurality of laminates being dispersion-arranged on the peeling base A in a length direction. The adhesive film for semiconductor is formed by applying and drying, on the peeling base A, adhesive layers in the same shape and at constant intervals intermittently in the length direction. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to an adhesive film for semiconductors, a method for manufacturing the same, a method for manufacturing a semiconductor device, and a semiconductor device.

  In recent years, there has been a rapid increase in demands for multifunctional and lightweight and compact mobile related devices. Accordingly, the need for high-density mounting of semiconductor elements is increasing year by year, and the development of a stacked multi-chip package (hereinafter referred to as “stacked MCP”) in which semiconductor elements are stacked plays a central role. The technical development of stacked MCP is to achieve both conflicting goals of package miniaturization and multi-stage loading. For this reason, the thickness of silicon wafers used for semiconductor elements has been rapidly reduced, and wafers with a thickness of 100 μm or less are being actively used and studied. In addition, since the multi-stage loading causes the package production process to become complicated, there is a need for a production process and material proposal corresponding to the simplification of the package production process and the increase in the number of wire bonding thermal histories by multi-stage loading.

  Under such circumstances, paste materials have been conventionally used as an adhesive member for stacked MCPs. However, the paste materials have problems such as the resin sticking out in the bonding process of semiconductor elements and the film thickness accuracy being low. . Since these problems cause problems during wire bonding, voids in the paste, and the like, when the paste material is used, it has become impossible to cope with the above requirements.

  In recent years, in order to improve such a problem, a film-like adhesive has been used instead of the paste material. The film adhesive can control the amount of protrusion in the bonding process of the semiconductor element less than the paste material, and increases the film thickness accuracy to reduce the film thickness variation. In particular, application to stacked MCP is being actively studied.

  This film-like adhesive usually has a configuration in which an adhesive layer is formed on the peeling substrate A, and one of typical usage methods is a wafer back surface pasting method. The wafer back surface attaching method is a method of directly attaching a film adhesive to the back surface of a silicon wafer used for manufacturing a semiconductor element. In this method, after the film adhesive is attached to the semiconductor wafer, the release substrate A is removed, and a dicing tape is attached onto the adhesive layer. Thereafter, the wafer is mounted on the wafer ring, and the wafer is cut into a desired semiconductor element size together with the adhesive layer. The semiconductor element after dicing has a structure having an adhesive layer cut out to the same size on the back surface. The semiconductor element with the adhesive layer is picked up and attached to a substrate to be mounted by a method such as thermocompression bonding. wear.

The dicing tape used for this back surface application method usually has a structure in which an adhesive layer is formed on an adhesive layer, and is roughly classified into two types, a pressure-sensitive dicing tape and a UV dicing tape. . As a function required for the dicing tape, at the time of dicing, a sufficient adhesive force is required so that the semiconductor element does not scatter due to a load accompanying cutting of the wafer, and when picking up each diced semiconductor element, an adhesive to each element It is required that there is no residue and that a semiconductor element with an adhesive layer can be easily picked up by a die bonder facility.
In addition, there is a growing demand for process improvement due to the desire to shorten the package manufacturing process. In order to simplify this process, the conventional wafer backside application method requires two steps of attaching a film adhesive to the wafer and then applying a dicing tape. An adhesive film for semiconductors (die-bonded dicing sheet) having both functions of a tape has been developed. As this semiconductor-use adhesive film, a laminated type having a structure in which a film adhesive and a dicing tape are bonded together (for example, see Patent Documents 1 to 3), a pressure-sensitive adhesive layer and an adhesive layer with a single resin layer There is a single layer type (see, for example, Patent Document 4) having both functions.

  Moreover, a method (so-called precut processing) in which such an adhesive film for semiconductor use is processed in advance into the shape of a wafer constituting a semiconductor element is known (for example, Patent Documents 5 and 6). Such pre-cut processing is a method in which a resin layer is punched in accordance with the shape of the wafer to be used, and the resin layer other than the portion to which the wafer is attached is peeled off.

  When such pre-cut processing is applied, generally, a laminated type adhesive film for semiconductor use is pre-cut in a film adhesive so that the adhesive layer is pre-cut according to the shape of the wafer, and the dicing tape is bonded to the dicing tape. The wafer is pre-cut according to the shape of the wafer ring, or the dicing tape that has been pre-cut into the wafer ring shape is bonded to the pre-cut film adhesive. In addition, a single layer type adhesive film for semiconductor use generally forms a resin layer (hereinafter referred to as “adhesive layer”) having both functions of an adhesive layer and an adhesive layer on the release substrate A. The adhesive layer is prepared by a method such as pre-cut processing, removing unnecessary portions of the resin layer, and bonding to the pressure-sensitive adhesive layer.

Japanese Patent No. 3348923 JP 10-335271 A Japanese Patent No. 2678655 Japanese Patent Publication No. 07-015087 Japanese Utility Model Publication No. 6-18383 Registered Utility Model No. 3021645

In such pre-cut processing, when forming the adhesive layer, an unnecessary adhesive layer that does not contribute to wafer sticking by cutting in the vertical direction with respect to the adhesive layer with a knife or the like that matches the shape of the wafer. A mechanism for peeling and removing from the peeling substrate A is widely adopted. On the other hand, there is a problem that when the cut is made in the precut process, fragments of the adhesive layer are generated and the fragments are mixed into the semiconductor element.
The present invention has been made in view of the above-described problems of the prior art, and the adhesive layer is formed in the same shape and intermittently at regular intervals in the length direction without going through a process of cutting the adhesive layer. By applying and drying, an adhesive film for semiconductor use that can reduce the man-hours and prevent mixing of fragments of the adhesive layer, a manufacturing method thereof, and a semiconductor device using the adhesive film for semiconductor application An object is to provide a manufacturing method and a semiconductor device.

The present invention relates to the following.
<1> A release substrate A, an adhesive layer disposed on the release substrate A, having a predetermined planar shape, and covering the adhesive layer and surrounding the adhesive layer on the release substrate A A laminated body having a predetermined shape composed of a pressure-sensitive adhesive layer formed so as to be in contact with the adhesive film for semiconductor use, wherein a plurality of the laminated bodies are dispersed and arranged in the length direction on the release substrate A The adhesive for semiconductor use, wherein the adhesive layer has the same shape and is intermittently applied and dried at regular intervals in the length direction on the release substrate A.
<2> The adhesive layer includes (1) a thermopolymerizable component including an epoxy resin and an epoxy resin curing agent, and (2) a high molecular weight component having a weight average molecular weight including a functional monomer of 100,000 or more. The adhesive film for semiconductors as described in <1> above, which is characterized by the following.
<3> The high molecular weight component is a glycidyl group-containing (meth) acrylic copolymer, and the amount of the epoxy group-containing monomer is 0.5 to 50% by mass, as described in <2> above Adhesive film for semiconductors.
<4> The storage elastic modulus at 25 ° C. of the adhesive layer is 10 to 10,000 MPa, and the storage elastic modulus of the completely cured adhesive layer at 260 ° C. is 0.5 to 1000 MPa < The adhesive film for semiconductors according to any one of 1> to <3>.

<5> The method for producing an adhesive film for a semiconductor according to any one of <1> to <4>, wherein the adhesive layer is formed on the release substrate A in the same shape and intermittently at regular intervals in the length direction. A first laminating step of applying, drying and laminating, a second laminating step of laminating the pressure-sensitive adhesive layer so as to cover the adhesive layer having the predetermined planar shape and the peeling substrate A, and the adhesive The adhesive layer is cut in a non-perpendicular direction with respect to the plane of the release substrate A until it reaches the release substrate A from the surface opposite to the release substrate A side of the agent layer, and the adhesive on the cut outer peripheral portion A layered product of a predetermined shape comprising an adhesive layer having a predetermined planar shape and a pressure-sensitive adhesive layer covering the adhesive layer and in contact with the release substrate A around the adhesive layer The manufacturing method of the adhesive film for semiconductors characterized by including the 1st cutting process which forms
<6> In the method for producing a semiconductor device using an adhesive film for semiconductors, the adhesive film for semiconductors is the adhesive film for semiconductors according to any one of <1> to <4>, and the laminate. Is attached to the semiconductor wafer from the surface on the adhesive layer side to obtain a semiconductor wafer with a laminate, and at least the semiconductor wafer with a laminate, A dicing step of cutting the semiconductor wafer into a semiconductor element of a predetermined size by cutting to the interface between the adhesive layer and the pressure-sensitive adhesive layer, and irradiating the laminate with high energy rays to form the adhesive layer Picking up the semiconductor element together with the adhesive layer from the pressure-sensitive adhesive layer to reduce the adhesive force to the pressure-sensitive adhesive layer, thereby obtaining a semiconductor element with an adhesive layer And a bonding step of bonding the semiconductor element in the semiconductor element with an adhesive layer to an adherend through the adhesive layer.
<7> The method for producing a semiconductor device according to <6>, wherein the adherend is a support member for mounting a semiconductor element or another semiconductor element.
<8> A semiconductor device manufactured by the method for manufacturing a semiconductor device according to <6> or <7>.

  According to the present invention, man-hours can be reduced by intermittently applying and drying the adhesive layer at regular intervals in the length direction without passing through the step of cutting the adhesive layer, and The manufacturing method of the adhesive film for semiconductors which can prevent mixing of the fragment of an adhesive bond layer, the manufacturing method of a semiconductor device using the said adhesive film for semiconductors, and a semiconductor device can be provided.

It is a top view of an example of the adhesive film for semiconductors provided with the peeling base material which concerns on this invention, an adhesive bond layer, and an adhesive layer. It is a top view of an example of the adhesive film for semiconductors provided with the peeling base material which concerns on this invention, an adhesive bond layer, and an adhesive layer. It is a top view of an example of the adhesive film for semiconductors provided with the peeling base material which concerns on this invention, an adhesive bond layer, and an adhesive layer. It is a top view of an example of the adhesive film for semiconductors provided with the peeling base material which concerns on this invention, an adhesive bond layer, and an adhesive layer. It is a top view of an example of the adhesive film for semiconductors provided with the peeling base material which concerns on this invention, an adhesive bond layer, and an adhesive layer. It is AA 'sectional drawing of the adhesive film for semiconductors shown in FIG. The cross-sectional schematic diagram explaining the manufacturing method of the semiconductor device which affixed the adhesive bond layer to the semiconductor wafer, and the adhesive layer to the wafer ring using the adhesive film for semiconductors of this invention.

<Adhesive film for semiconductor use>
The adhesive film for semiconductor use of the present invention includes a release substrate A, an adhesive layer disposed on the release substrate A, having a predetermined planar shape, and covering the adhesive layer and around the adhesive layer. A laminate comprising a pressure-sensitive adhesive layer formed in contact with the release substrate A and having a predetermined shape, and a semiconductor application in which a plurality of the laminates are dispersed and arranged in the length direction on the release substrate A An adhesive film, wherein the adhesive layer is formed on the release substrate A by applying and drying the adhesive layer intermittently at regular intervals in the length direction.

  The adhesive film for semiconductor use of the present invention has the same configuration as the adhesive film for semiconductor use that has been subjected to the above-described precut processing. And, in the adhesive film for semiconductor use of the present invention, the adhesive layer is applied in the same shape and intermittently at regular intervals in the length direction, and dried, without going through the step of cutting the adhesive layer, Man-hours can be reduced and contamination of the adhesive layer can be prevented.

In the adhesive film for semiconductor use of the present invention, the adhesive layer has a predetermined planar shape that matches the planar shape of the adherend to which the laminate is to be attached after the release substrate A is peeled off. Preferably it is.
As the adherend, for example, a semiconductor wafer can be cited. Since the adhesive layer has a planar shape that matches the planar shape of the semiconductor wafer, the process of dicing the semiconductor wafer is facilitated. Note that the planar shape of the adhesive layer does not have to completely match the planar shape of the semiconductor wafer. For example, it may be a shape that can completely cover the planar shape of the semiconductor wafer. It may match the shape.

Furthermore, in the above adhesive film for semiconductor use, the pressure-sensitive adhesive layer is sticky at room temperature (25 ° C.) to the adherend to which the adhesive layer is to be attached and the adhesive layer after peeling the release substrate A. It is preferable to have properties. Thereby, when dicing a semiconductor wafer, a semiconductor wafer is fully fixed and dicing becomes easy. In addition, when a wafer ring is used when dicing a semiconductor wafer, and an adhesive film for a semiconductor is attached so that the adhesive layer is in close contact with the wafer ring, sufficient adhesion to the wafer ring is obtained. Dicing becomes easy.
The pressure-sensitive adhesive layer preferably has a reduced adhesive force to the adhesive layer due to irradiation with high energy rays. Thereby, when peeling an adhesive bond layer from an adhesive layer, peeling becomes possible easily by irradiating with high energy rays, such as an ultraviolet-ray, an electron beam, and a radiation.

  The adhesive film for a semiconductor further includes an adhesive layer disposed between at least a part of a peripheral edge of the pressure-sensitive adhesive layer and the release substrate A, and the release substrate is disposed around the adhesive layer. By providing the pressure-sensitive adhesive layer formed so as to be in contact with A, this pressure-sensitive adhesive layer is attached to the wafer ring used when dicing the semiconductor wafer, and the adhesive layer cannot be directly attached to the wafer ring. Can be. When the adhesive layer is attached directly to the wafer ring, the adhesive strength of the adhesive layer needs to be adjusted to a low adhesive strength that can be easily peeled off from the wafer ring. By sticking, adjustment of such adhesive force becomes unnecessary. Therefore, the adhesive layer has a sufficiently high adhesive strength, and the adhesive layer has a sufficiently low adhesive strength that allows the wafer ring to be easily peeled off. The wafer ring can be peeled off more efficiently. Furthermore, since the adhesive force of the pressure-sensitive adhesive layer can be adjusted to be sufficiently low, it becomes easy to create a peeling start point between the peeling substrate A and the pressure-sensitive adhesive layer, and the adhesive layer and the pressure-sensitive adhesive from the peeling substrate A Peeling of the layer is facilitated and occurrence of defective peeling can be more sufficiently suppressed. Here, the pressure-sensitive adhesive layer preferably has adhesiveness at room temperature (25 ° C.) with respect to the adherend to which the pressure-sensitive adhesive layer is to be attached and the adhesive layer after peeling the release substrate A. .

  The adhesive film for semiconductor use of the present invention preferably has an adhesive layer having a storage elastic modulus at 25 ° C. of 10 to 10,000 MPa and a storage elastic modulus after curing at 260 ° C. of 0.5 to 1000 MPa. . When the storage elastic modulus before curing at 25 ° C. is in the above range, the precut processability can be ensured. Moreover, it is excellent in the reliability of a semiconductor device as the storage elastic modulus after hardening at 260 degreeC is the said range. This storage elastic modulus is, for example, using a dynamic viscoelasticity measuring device (DVE-V4, manufactured by Rheology Co., Ltd.), applying a tensile load to the cured adhesive, and having a frequency of 10 Hz and a heating rate of 5 to 10 ° C./min. It can be measured by a temperature dependence measurement mode in which measurement is performed from −70 ° C. to 300 ° C. under the conditions of

  The adhesive film for semiconductor use of the present invention comprises a release substrate A, an adhesive layer disposed on the release substrate A, having a predetermined planar shape, and the release substrate A around the adhesive layer. It has a configuration in which adhesive layers formed so as to be in contact with each other are sequentially laminated. In the present invention, the adhesive layer and the pressure-sensitive adhesive layer are referred to as a laminate. The laminate composed of the adhesive layer and the pressure-sensitive adhesive layer is cut into a predetermined shape and partially laminated on the release substrate A. The laminate is a plurality of the lengths of the release substrate A. Distributed in the direction. Further, the peeling substrate A has a wafer ring along the peripheral edge of the shape of the laminate from the surface on the adhesive layer side in the thickness direction of the peeling substrate A (hereinafter also referred to as “cut portion A”). Pre-cut to match the shape.

  Here, the predetermined shape of the laminated body is a state in which the laminated body is partially laminated on the peeling substrate A, and the predetermined planar shape of the adhesive layer is a plane of an adherend such as a semiconductor wafer. The shape is not particularly limited as long as it is larger than the shape, but for example, a circle, a substantially circle, a quadrangle, a pentagon, a hexagon, an octagon, a wafer shape (a shape in which a part of the circumference of the circle is a straight line), etc. It is preferable that the shape be easily attached to a semiconductor wafer. Among these, in order to reduce useless parts other than the semiconductor wafer mounting portion, a circular shape or a wafer shape is preferable.

  When dicing a semiconductor wafer, a wafer ring is usually used for handling with a dicing apparatus. In this case, the peeling base material A is peeled off from the adhesive film for semiconductor use, a wafer ring is attached to the pressure-sensitive adhesive layer, and a semiconductor wafer is attached to the inside thereof. Here, the wafer ring is a frame such as an annular shape or a square shape, and the pressure-sensitive adhesive layer of the laminate in the adhesive film for semiconductors preferably has a planar shape that matches the wafer ring. .

  The pressure-sensitive adhesive layer can sufficiently fix an adherend such as a semiconductor wafer or a wafer ring at room temperature (25 ° C.), and can be peeled off after dicing to a wafer ring or the like. It is preferable to have. The adhesive strength of the adhesive layer before irradiation with high energy rays is preferably 3.0 to 150 N / m, and more preferably 30 to 100 N / m. When it exceeds 150 N / m, it is difficult to peel off from the wafer ring, and workability is lowered. If it is less than 3.0 N / m, the holding force with respect to the wafer ring is insufficient, which may cause trouble in the manufacturing process of the semiconductor device.

Hereinafter, each layer which comprises a semiconductor use adhesive film is demonstrated in detail.
The peeling base A in the present invention plays a role as a carrier film when using an adhesive film for semiconductors. The release substrate B is used as a protective film for forming an adhesive layer having a predetermined shape. Examples of the peeling substrate A and the peeling substrate B include, for example, a polyester film such as a polyethylene terephthalate film, a polytetrafluoroethylene film, a polyethylene film, a polypropylene film, a polymethylpentene film, a polyolefin film such as a polyvinyl acetate film, A plastic film such as a polyvinyl chloride film or a polyimide film can be used. Moreover, paper, a nonwoven fabric, metal foil, etc. can also be used.
In addition, a part or all of the surface of the release substrate A and the release substrate B on the adhesive layer side is surface-treated with a release agent such as a silicone release agent, a fluorine release agent, or a long-chain alkyl acrylate release agent. It is preferable that Although the thickness of the peeling base material A can be suitably selected in the range which does not impair the workability | operativity at the time of use, it is preferable that it is 10-500 micrometers, It is more preferable that it is 20-100 micrometers, It is 25-50 micrometers. It is particularly preferred.

The (1) thermopolymerizable component used in the adhesive layer is not particularly limited as long as it is polymerized by heat. For example, glycidyl group, acryloyl group, methacryloyl group, hydroxyl group, carboxyl group, isocyanurate group, amino A compound having a functional group such as a group or an amide group. These can be used alone or in combination of two or more. In consideration of heat resistance as an adhesive film for semiconductor applications, it is preferable to use a thermosetting resin that is cured by heat and exerts an adhesive action.
The adhesive layer of the adhesive film for semiconductor use according to the present invention has a high weight average molecular weight of 100,000 or more including (1) a thermally polymerizable component containing an epoxy resin and an epoxy resin curing agent and (2) a functional monomer. Preferably it contains a molecular weight component.

Examples of the thermosetting resin include an epoxy resin, an acrylic resin, a silicone resin, a phenol resin, a thermosetting polyimide resin, a polyurethane resin, a melamine resin, and a urea resin, and in particular, heat resistance, workability, and reliability. It is preferable to use an epoxy resin in that an adhesive film for a semiconductor that is excellent in the quality can be obtained.
The epoxy resin is not particularly limited as long as it is cured and has an adhesive action. As such an epoxy resin, for example, a bifunctional epoxy resin such as a bisphenol A type epoxy, a novolac type epoxy resin such as a phenol novolac type epoxy resin or a cresol novolac type epoxy resin, or the like can be used. Moreover, what is generally known, such as a polyfunctional epoxy resin, a glycidyl amine type epoxy resin, a heterocyclic ring-containing epoxy resin, or an alicyclic epoxy resin, can be used.

  As the bisphenol A type epoxy resin, Epicoat series (Epicoat 807, Epicoat 815, Epicoat 825, Epicoat 827, Epicoat 828, Epicoat 834, Epicoat 1001, Epicoat 1004, Epicoat 1007, Epicoat 1009) manufactured by Japan Epoxy Resin Co., Ltd., Dow Chemical DER-330, DER-301, DER-361 made by the company, YD8125, YDF8170 made by Toto Kasei Co., Ltd., etc. are mentioned.

Examples of phenol novolac type epoxy resins include Epicoat 152 and Epicoat 154 manufactured by Japan Epoxy Resin Co., Ltd., EPPN-201 manufactured by Nippon Kayaku Co., Ltd., DEN-438 manufactured by Dow Chemical Co., Ltd., and o-cresol novolak type epoxy resin. Examples of the resin include EOCN-102S, EOCN-103S, EOCN-104S, EOCN-1012, EOCN-1025, EOCN-1027 manufactured by Nippon Kayaku Co., Ltd., YDCN700-10 manufactured by Tohto Kasei Co., Ltd., and the like.
Examples of the cresol novolac type epoxy resin include EOCN-102S, 103S, 104S, 1012, 1025, 1027 and the like manufactured by Nippon Kayaku Co., Ltd., which are o-cresol novolak type epoxy resins.

As the polyfunctional epoxy resin, Epon 1031S manufactured by Japan Epoxy Resin Co., Ltd., Araldite 0163 manufactured by Ciba Specialty Chemicals Co., Ltd., Denacol EX-611, EX-614, EX-614B, EX-622 manufactured by Nagase ChemteX Corporation. , EX-512, EX-521, EX-421, EX-411, EX-321, and the like.
As glycidylamine type epoxy resins, Epicoat 604 manufactured by Japan Epoxy Resin Co., Ltd., YH-434 manufactured by Toto Kasei Co., Ltd., TETRAD-X and TETRAD-C manufactured by Mitsubishi Gas Chemical Co., Ltd., ELM manufactured by Sumitomo Chemical Co., Ltd. -120 etc. are mentioned.
Examples of the heterocyclic ring-containing epoxy resin include Araldite PT810 manufactured by Ciba Specialty Chemicals, ERL4234, ERL4299, ERL4221, and ERL4206 manufactured by UCC.
Examples of the alicyclic epoxy resin include Epolide series and Celoxide series manufactured by Daicel Chemical Industries, Ltd.
These epoxy resins can be used alone or in combination of two or more.

  When using an epoxy resin, it is preferable to use an epoxy resin curing agent. As the epoxy resin curing agent, known curing agents that are usually used can be used, for example, amines, polyamides, acid anhydrides, polysulfides, boron trifluoride, dicyandiamide, bisphenol A, bisphenol F, bisphenol. Examples thereof include bisphenols having two or more phenolic hydroxyl groups per molecule such as S, phenol resins such as phenol novolac resin, bisphenol A novolac resin and cresol novolac resin. Phenol resins such as phenol novolac resin, bisphenol A novolac resin, and cresol novolac resin are particularly preferable in terms of excellent electric corrosion resistance at the time of moisture absorption. In the present invention, the epoxy resin curing agent includes what is called a curing accelerator that acts catalytically on an epoxy group to promote crosslinking.

  Among the phenol resins as the epoxy resin curing agent, for example, Dainippon Ink & Chemicals, Inc., trade names: Phenolite LF4871, Phenolite LF2822, Phenolite TD-2090, Phenolite TD-2149 Phenolite VH-4150, Phenolite VH4170, Meiwa Kasei Co., Ltd., trade name: H-1, Japan Epoxy Resin Co., Ltd., trade name: EpiCure MP402FPY, EpiCure YL6065, EpiCure YLH129B65, and Mitsui Chemicals, Inc. Name: Milex XL, Milex XLC, Milex RN, Milex RS, Milex VR and the like.

  Moreover, the polymer containing a functional monomer is mentioned as a preferable thing among the high molecular weight components of said (2). The functional monomer means a monomer having a functional group. Examples of the functional group in such a polymer include glycidyl group, acryloyl group, methacryloyl group, hydroxyl group, carboxyl group, isocyanurate group, amino group, and amide group. Among them, a glycidyl group is preferable. More specifically, a glycidyl group-containing (meth) acrylic copolymer containing a functional monomer such as glycidyl acrylate or glycidyl methacrylate is preferable, and these are used as a constituent material of the adhesive layer, before curing. It is preferably incompatible with thermosetting resins such as epoxy resins.

  The polymer containing the functional monomer and having a weight average molecular weight of 100,000 or more includes, for example, a functional monomer such as glycidyl acrylate or glycidyl methacrylate and has a weight average molecular weight of 100,000. Examples thereof include glycidyl group-containing (meth) acrylic copolymers as described above, and among them, those that are incompatible with thermosetting resins such as epoxy resins before curing are preferable.

  As said glycidyl group containing (meth) acrylic copolymer, a glycidyl group containing (meth) acrylic ester copolymer, a glycidyl group containing acrylic rubber, etc. can be used, for example, and a glycidyl group containing acrylic rubber is more preferable. The glycidyl group-containing acrylic rubber as used in the present invention is a copolymer containing a glycidyl group mainly composed of an acrylate ester and mainly composed of butyl acrylate and acrylonitrile, or ethyl acrylate and acrylonitrile. .

  As such a monomer, it is preferable to use glycidyl acrylate or glycidyl methacrylate. Specific examples of the glycidyl group-containing (meth) acrylic copolymer having a weight average molecular weight of 100,000 or more include HTR-860P-3 (trade name) manufactured by Nagase ChemteX Corporation.

  The amount of the epoxy group-containing monomer unit such as glycidyl acrylate or glycidyl methacrylate is preferably 0.5 to 50% by mass based on the total amount of the monomer in order to cure by heating and effectively form a network structure. Moreover, from the viewpoint that the adhesive force can be secured and gelation can be prevented, 0.5 to 6.0% by mass is more preferable, 0.8 to 5.0% by mass is further preferable, and 1. 0-4.0 mass% is especially preferable.

  It is also possible to copolymerize with a functional monomer other than an epoxy group-containing monomer such as glycidyl acrylate and glycidyl methacrylate. Examples of the functional monomer other than the epoxy group-containing monomer include ethyl (meth) acrylate and butyl (meta ) Acrylate and the like, and these can be used alone or in combination of two or more. In the present invention, ethyl (meth) acrylate means ethyl acrylate or ethyl methacrylate. The mixing ratio when a functional monomer other than an epoxy group-containing monomer is used in combination is determined in consideration of the Tg of the glycidyl group-containing (meth) acrylic copolymer so that the Tg is -10 ° C or higher. It is preferable. When Tg is −10 ° C. or higher, the tackiness of the adhesive layer in an uncured state is appropriate, and the handleability tends to be good.

When polymerizing the functional monomer to produce a high molecular weight component having a functional monomer-containing weight average molecular weight of 100,000 or more, the polymerization method is not particularly limited. For example, pearl polymerization, solution polymerization, etc. The method can be used. The weight average molecular weight of the high molecular weight component containing the functional monomer is 100,000 or more, preferably 300,000 to 3,000,000, and more preferably 500,000 to 2,000,000. When the weight average molecular weight is within this range, the strength, flexibility, and tackiness of a sheet or film are appropriate, and the flowability is appropriate, so the circuit fillability of wiring is ensured. It tends to be possible.
In the present invention, the weight average molecular weight is a value measured by gel permeation chromatography and converted using a standard polystyrene calibration curve.

  Moreover, the usage-amount of the high molecular weight component whose weight average molecular weight containing a functional monomer is 100,000 or more has preferable 10-400 mass parts with respect to 100 mass parts of thermopolymerizable components. When it is in this range, storage elastic modulus and flowability during molding can be ensured, and handling properties at high temperatures tend to be good. Moreover, 15-350 mass parts is more preferable, and 20-300 mass parts is especially preferable with respect to 100 mass parts of thermopolymerizable components.

  The pressure-sensitive adhesive layer constituting the adhesive film for semiconductor use of the present invention comprises (3) a base material layer and (4) a paste layer containing a high energy ray polymerizable component. Can be the same as the film or sheet used for the release substrate A. For example, polyester film such as polyethylene terephthalate film, polytetrafluoroethylene film, polyethylene film, polypropylene film, polymethylpentene film, polyolefin film such as polyvinyl acetate film, plastic film such as polyvinyl chloride film, polyimide film, etc. Can be mentioned. Furthermore, the pressure-sensitive adhesive layer may be one in which these films are laminated in two or more layers.

  In addition, (4) by containing a high energy ray polymerizable component in the adhesive layer, after adhering the adhesive layer to an adherend such as a semiconductor wafer, before dicing, irradiation is performed before dicing. Picking up can be facilitated by improving the adhesive strength, or conversely dicing and then irradiating with radiation to lower the adhesive strength. In the present invention, as such a radiation polymerizable component, a compound conventionally used in a radiation polymerizable dicing sheet can be used without particular limitation.

  Examples of the high energy ray polymerizable component used in the pressure-sensitive adhesive layer include a radiation polymerizable component. Although it does not restrict | limit especially as a radiation polymerizable component, For example, methyl acrylate, methyl methacrylate, ethyl acrylate, ethyl methacrylate, butyl acrylate, butyl methacrylate, 2-ethylhexyl acrylate, methacrylic acid-2- Ethylhexyl, pentenyl acrylate, tetrahydrofurfuryl acrylate, tetrahydrofurfuryl methacrylate, diethylene glycol diacrylate, triethylene glycol diacrylate, tetraethylene glycol diacrylate, diethylene glycol dimethacrylate, triethylene glycol dimethacrylate, tetraethylene glycol dimethacrylate, trimethylolpropane Diacrylate, trimethylolpropane triacrylate, trimethylolpropane Methacrylate, trimethylolpropane trimethacrylate, 1,4-butanediol diacrylate, 1,6-hexanediol diacrylate, 1,4-butanediol dimethacrylate, 1,6-hexanediol dimethacrylate, pentaerythritol triacrylate, penta Erythritol tetraacrylate, pentaerythritol trimethacrylate, pentaerythritol tetramethacrylate, dipentaerythritol hexaacrylate, dipentaerythritol hexamethacrylate, styrene, divinylbenzene, 4-vinyltoluene, 4-vinylpyridine, N-vinylpyrrolidone, 2-hydroxyethyl Acrylate, 2-hydroxyethyl methacrylate, 1,3-acryloyloxy-2-hydroxy Propane, 1,2-methacryloyloxy-2-hydroxypropane, methylenebisacrylamide, N, N- dimethyl acrylamide, N- methylol acrylamide, tris (beta-hydroxyethyl) can be used triacrylate isocyanurate.

  Moreover, a photoinitiator (For example, a thing which produces | generates a free radical by irradiation of high energy rays, such as a radiation) can also be added to an adhesive layer. Examples of the photopolymerization initiator include benzophenone, N, N′-tetramethyl-4,4′-diaminobenzophenone (Michler ketone), N, N′-tetraethyl-4,4′-diaminobenzophenone, 4-methoxy- 4′-dimethylaminobenzophenone, 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) -butanone-1,2,2-dimethoxy-1,2-diphenylethane-1-one, 1-hydroxy- Aromatic ketones such as cyclohexyl-phenyl-ketone, 2-methyl-1- (4- (methylthio) phenyl) -2-morpholinopropanone-1,2,4-diethylthioxanthone, 2-ethylanthraquinone, phenanthrenequinone, benzoin Methyl ether, benzoin ethyl ether, benzoin phenyl ether Benzoin ethers such as methyl, benzoin such as methyl benzoin and ethyl benzoin, benzyl derivatives such as benzyldimethyl ketal, 2- (o-chlorophenyl) -4,5-diphenylimidazole dimer, 2- (o-chlorophenyl) -4 , 5-di (m-methoxyphenyl) imidazole dimer, 2- (o-fluorophenyl) -4,5-phenylimidazole dimer, 2- (o-methoxyphenyl) -4,5-diphenylimidazole dimer 2-mer, 2- (p-methoxyphenyl) -4,5-diphenylimidazole dimer, 2,4-di (p-methoxyphenyl) -5-phenylimidazole dimer, 2- (2,4-dimethoxy) 2,4,5-triarylimidazole dimers, such as phenyl) -4,5-diphenylimidazole dimer, Examples include acridine derivatives such as nilacridine and 1,7-bis (9,9′-acridinyl) heptane.

  The thickness of the pressure-sensitive adhesive layer is preferably 10 to 500 μm, more preferably 25 to 200 μm, and particularly preferably 50 to 150 μm.

  The adhesive film for semiconductor use of the present invention comprises the peeling substrate A, the adhesive layer and the pressure-sensitive adhesive layer as described above. In the adhesive film for semiconductor use of the present invention, the release substrate A is peeled from the surface of the release substrate A on the pressure-sensitive adhesive layer side along the peripheral edge of the planar shape of the adhesive layer and the pressure-sensitive adhesive layer. A cut portion A is formed in the thickness direction of the substrate A.

In order to increase the storage elastic modulus of the adhesive layer that is cured by heat, for example, the amount of epoxy resin used is increased, or an epoxy resin having a high glycidyl group concentration or a phenol resin having a high hydroxyl group concentration is used. Methods such as increasing the crosslinking density of the whole polymer or adding an inorganic filler can be used.
The inorganic filler for increasing the storage elastic modulus of the adhesive layer will be described later.
Furthermore, a high molecular weight component that is compatible with the thermopolymerizable component can be added to the adhesive layer for the purpose of improving flexibility and reflow crack resistance. Such a high molecular weight resin is not particularly limited, and examples thereof include a phenoxy resin, a high molecular weight thermopolymerizable component, and an ultrahigh molecular weight thermopolymerizable component. These can be used alone or in combination of two or more.

In addition, an inorganic filler may be added to the adhesive layer for the purpose of improving the handleability, improving the thermal conductivity, adjusting the melt viscosity and imparting thixotropic properties. The inorganic filler is not particularly limited. For example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker , Boron nitride, crystalline silica, amorphous silica and the like, and the shape of the filler is not particularly limited. These fillers can be used alone or in combination of two or more.
Among these, aluminum oxide, aluminum nitride, boron nitride, crystalline silica, and amorphous silica are preferable for improving thermal conductivity. For the purpose of adjusting melt viscosity and imparting thixotropic properties, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, crystallinity Silica, amorphous silica and the like are preferable.
Further, the average particle size of the inorganic filler is preferably 0.005 μm to 1.0 μm, and the adhesiveness may be lowered even if the average particle size is smaller or larger.
It is preferable that the compounding quantity of an inorganic filler is 1-20 mass% with respect to 100 mass% of adhesive bond layers. If the blending amount is less than 1% by mass, the effect of addition tends not to be obtained. If the blending amount exceeds 20% by mass, the storage elastic modulus of the adhesive layer increases, the adhesiveness decreases, the electrical properties decrease due to residual voids, etc. There is a tendency to cause problems.

  The thickness of the adhesive layer does not affect the bonding operation to the semiconductor wafer and the dicing operation after the bonding while ensuring sufficient adhesion to the adherend such as a support member for mounting the semiconductor element. A range is desirable. From this viewpoint, the thickness of the adhesive layer is preferably 1 to 300 μm, more preferably 1 to 75 μm, and particularly preferably 1 to 20 μm. When the thickness is less than 1 μm, it tends to be difficult to ensure a sufficient die-bonding adhesive force, and when it exceeds 300 μm, there is a tendency that problems such as an influence on the pasting work and the dicing work occur.

<Manufacturing method of adhesive film for semiconductor use>
The manufacturing method of the said adhesive film for semiconductors is demonstrated.
The method for producing an adhesive film for semiconductor use according to the present invention includes a first method in which an adhesive layer having a predetermined shape is applied on a release substrate A in the same direction, intermittently applied at regular intervals, dried, and laminated. Laminating step, the second laminating step of laminating the pressure-sensitive adhesive layer so as to cover the adhesive layer having the predetermined planar shape and the peeling base material A, and opposite to the peeling base material A side of the pressure-sensitive adhesive layer A cut is made in a non-perpendicular direction with respect to the plane of the release substrate A until it reaches the release substrate A from the side surface, the adhesive layer on the cut outer peripheral portion is removed, and the predetermined plane shape Including a first cutting step of forming an adhesive layer and a laminate having a predetermined shape, which includes an adhesive layer and a pressure-sensitive adhesive layer that covers the adhesive layer and is in contact with the release substrate A around the adhesive layer It is characterized by that.

  More specifically, an adhesive layer is applied on the release substrate A (first lamination step). Next, on the release substrate A that has finished the first lamination step, the second lamination step of laminating the pressure-sensitive adhesive layer, and until reaching the release substrate A from the surface of the pressure-sensitive adhesive layer by a precut blade, A cut is made in a non-perpendicular direction with respect to the plane of the release substrate A, the adhesive layer on the cut outer peripheral portion is removed, and the release substrate A is formed to form a laminate having a predetermined shape. The cut portion A is formed in an annular shape (first cutting step). Thereby, manufacture of the adhesive film for semiconductors is completed.

Hereinafter, each manufacturing process will be described in more detail.
In the first laminating step, first, the material constituting the adhesive layer is dissolved or dispersed in a solvent to form an adhesive layer forming varnish, which is applied onto the release substrate A, and then the solvent is removed by heating. .
The method for intermittently forming the adhesive layer is not particularly limited as long as it has a predetermined shape and a constant interval, and is a method in which the adhesive layer forming varnish is intermittently discharged onto the release substrate A and applied. A method of forming an adhesive layer by applying an oil-repellent treatment to a part of the release substrate A in advance and applying the adhesive layer-forming varnish to a portion other than the oil-repellent surface, or a desired adhesive layer The release substrate B that has penetrated the shape is brought into contact with the release substrate A, and after the adhesive layer forming varnish is applied from the upper surface of the release substrate B, the release substrate B is removed to obtain a predetermined shape. There is a method of obtaining an adhesive layer.

  On the other hand, the pressure-sensitive adhesive layer used in the second laminating step is prepared by first dissolving or dispersing the material constituting the pressure-sensitive adhesive layer in a solvent to form a pressure-sensitive adhesive layer-forming varnish, which is applied to the base film, and then heated. After removing the solvent by the step, it is bonded to another base film to obtain an adhesive layer.

  Here, the solvent used for preparing the varnish for forming both layers is not particularly limited as long as it can dissolve or disperse each constituent material, but considering the volatility at the time of layer formation, For example, it is preferable to use a solvent having a relatively low boiling point such as methanol, ethanol, 2-methoxyethanol, 2-ethoxyethanol, 2-butoxyethanol, methyl ethyl ketone, acetone, methyl isobutyl ketone, toluene, and xylene. In addition, for the purpose of improving the coating properties, for example, a solvent having a relatively high boiling point such as dimethylacetamide, dimethylformamide, N-methylpyrrolidone, cyclohexanone can be used. These solvents can be used alone or in combination of two or more. In addition, after preparing a varnish, the bubble in a varnish can also be removed by vacuum deaeration.

  As a method for applying the adhesive layer forming varnish to the release substrate A in the first laminating step and a method for applying the pressure sensitive adhesive layer forming varnish to the base film in the second laminating step, a known method is used. For example, a knife coating method, a roll coating method, a spray coating method, a gravure coating method, a bar coating method, a curtain coating method, a die coating method, or the like can be used.

  The member to be subjected to the oil repellency treatment on the release substrate A may be any compound or siloxane compound having 1 to 16 carbon atoms and having a fluoroalkyl group bonded with one or more fluorine atoms. Fluorooctanoic acid, perfluorododecanoic acid, perfluorotridecanoic acid, perfluorotetradecanoic acid, perfluoropentadecanoic acid, perfluorohexadecanoic acid, perfluoroheptanoic acid, (poly) siloxanes such as methylmethoxy (poly) siloxane, methylethoxy (Poly) siloxane, dimethyl (poly) siloxane, n-propylmethoxy (poly) siloxane, n-propylethoxy (poly) siloxane, iso-butylmethoxy (poly) siloxane, iso-butylethoxy (poly) siloxane, n-octyl Methoxy (poly) white Xan and n-octylethoxy (poly) siloxane, iso-octylmethoxy (poly) siloxane, and the like.

In the method for producing an adhesive film for semiconductor use of the present invention, after the first laminating step, the pressure-sensitive adhesive layer obtained above is laminated so as to cover the adhesive layer having the predetermined planar shape and the release substrate A. A second laminating step, cutting from the surface of the pressure-sensitive adhesive layer to the peeling base material A in a non-perpendicular direction with respect to the plane of the peeling base material A, and the pressure-sensitive adhesive in the cut outer peripheral portion The semiconductor-use adhesive film as shown in FIGS. 1 to 5 through a first cutting step in which a cut portion A is formed in an annular shape in the release substrate A so as to remove the layer and form a laminate having a predetermined shape. Get.
In addition, bonding of an adhesive bond layer and an adhesive layer can be performed by a conventionally well-known method, for example, can be performed using a laminator etc.
As mentioned above, although suitable embodiment of the manufacturing method of the adhesive film for semiconductors of this invention and the manufacturing method of adhesive film for semiconductors was described in detail, this invention is not restrict | limited to these embodiments.

<Method for Manufacturing Semiconductor Device>
A method for producing a semiconductor device using the adhesive film for semiconductors of the present invention will be described.
In the adhesive film for semiconductor use of the present invention, the release substrate A plays the role of a carrier film, and is wound with one end connected to a cylindrical core while being supported by two rolls and a wedge-shaped member. It is turned to form a first roll, and is wound with the other end connected to a cylindrical core to form a second roll. Then, a core driving motor for rotating the core is connected to the core of the second roll, and the release substrate after the second laminate in the adhesive film for semiconductor is peeled off A is wound at a predetermined speed.

  First, when the winding core driving motor rotates, the winding core of the second roll rotates, and the semiconductor application adhesive film wound around the winding core of the first roll is pulled out of the first roll. Then, the drawn adhesive film for semiconductor use is guided onto a disk-shaped semiconductor wafer arranged on a movable stage and a wafer ring arranged so as to surround it.

  Next, the laminate comprising the adhesive layer and the pressure-sensitive adhesive layer is peeled from the peeling substrate A. At this time, a wedge-shaped member is applied from the peeling substrate A side of the adhesive film for semiconductor use, the peeling substrate A is bent at an acute angle toward the member side, and the peeling starting point is between the peeling substrate A and the laminate. Will be created. Further, air is blown onto the boundary surface between the peeling substrate A and the laminate so that the peeling starting point is more efficiently created.

  After the peeling starting point is created between the release substrate A and the laminate in this way, the laminate is attached so that the adhesive layer is in close contact with the wafer ring and the adhesive layer is in close contact with the semiconductor wafer. Done. At this time, the laminate is pressed against the semiconductor wafer and the wafer ring by the roll as shown in FIG. Then, the attachment of the stacked body on the semiconductor wafer and the wafer ring is completed.

By the procedure as described above, it is possible to continuously apply the laminate to the semiconductor wafer in an automated process. As an apparatus for performing the operation of attaching the laminated body to such a semiconductor wafer, for example, RAD-2500 (trade name) manufactured by Lintec Corporation may be used.
And when sticking a laminated body to a semiconductor wafer by such a process, by using a semiconductor use adhesive film, the peeling origin between peeling base material A and a laminated body (of peeling base material A and an adhesive layer) Can be easily created, and the occurrence of peeling failure can be sufficiently suppressed.

  Next, the semiconductor wafer to which the laminated body is attached by the above-described process is diced to a required size by a cutting member, for example, a dicing blade, to obtain a semiconductor element to which an adhesive layer is attached. Here, steps such as washing and drying may be further performed. At this time, since the semiconductor wafer is sufficiently adhered to the adhesive layer by the adhesive layer, the semiconductor wafer and the semiconductor element after dicing are sufficiently prevented from falling off during each of the above steps.

  Next, the adhesive layer is irradiated with a high energy ray such as radiation to polymerize and cure the adhesive layer. At this time, heating may be further performed for the purpose of accelerating the curing reaction simultaneously with or after irradiation with the high energy beam. Irradiation of the high energy ray to the pressure-sensitive adhesive layer is performed from the surface of the pressure-sensitive adhesive layer on which the adhesive layer is not provided.

  After the high energy beam irradiation, the semiconductor element to be picked up is picked up by, for example, a suction collet. At this time, the semiconductor element to be picked up can also be pushed up from the lower surface of the pressure-sensitive adhesive layer, for example, with a needle rod or the like. By curing the adhesive layer, when picking up the semiconductor element, it is easy for peeling to occur at the interface between the adhesive layer and the adhesive layer, and the adhesive layer is picked up with the adhesive layer attached to the lower surface of the semiconductor element. It becomes. Then, the semiconductor element to which the adhesive layer is attached is placed on the support member for mounting the semiconductor element via the adhesive layer, and heated. By heating, the adhesive layer exhibits an adhesive force, and the bonding between the semiconductor element and the semiconductor element mounting support member is completed. Then, a semiconductor device is manufactured through a wire bonding process, a sealing process, and the like as necessary.

<Semiconductor device>
In the semiconductor device of the present invention, a semiconductor element is laminated on an organic substrate serving as a support member for mounting a semiconductor element via an adhesive layer. Further, a circuit pattern and a terminal are formed on the organic substrate, and the circuit pattern and the semiconductor element are connected to each other by wire bonds. These are sealed with a sealing material to form a semiconductor device. This semiconductor device is manufactured using the adhesive film for a semiconductor of the present invention by the above-described method for manufacturing a semiconductor device of the present invention. As mentioned above, although the manufacturing method of the semiconductor device of this invention and the suitable embodiment of a semiconductor device were demonstrated in detail, this invention is not restrict | limited to these embodiment.

EXAMPLES Hereinafter, the present invention will be specifically described with reference to examples, but the present invention is not limited thereto.
[Preparation of adhesive films for semiconductors]
Example 1
(1) An epoxy resin, an epoxy resin curing agent, and a coupling agent were blended in the composition shown in Table 1 (the blending unit is part by mass), cyclohexanone was added, mixed by stirring, and further kneaded for 90 minutes using a bead mill. This was mixed with (2) a high molecular weight component to obtain a varnish and vacuum degassed. The varnish after vacuum degassing (non-volatile content, 15% by mass) was applied onto a polyethylene terephthalate film (Purex A31, PET film, manufactured by Teijin DuPont Films, Inc.) having a thickness of 50 μm and treated at 140 ° C. Heat-dried for a minute, and the adhesive layer for semiconductors in which the uncured square-shaped adhesive bond layer with a film thickness of 50 micrometers was intermittently formed in the length direction at a fixed interval of 278 mm was produced. (First lamination step)
The materials used in Table 1 are YDCN-700-10 (o-cresol novolac type epoxy resin, manufactured by Tohto Kasei Co., Ltd.), Millex XLC-LL (phenolic resin, manufactured by Mitsui Chemicals, Inc.), HTR- 860P-3 (glycidyl group-containing (meth) acrylic copolymer having a weight average molecular weight of 100,000 or more, manufactured by Nagase ChemteX Corporation), NUC A-1160 (γ-ureidopropyltrimethoxysilane, manufactured by Nihon Unicar Corporation) ).

The pressure-sensitive adhesive layer is composed of 63% by mass of dipentaerythritol hexaacrylate (manufactured by Nippon Kayaku Co., Ltd., trade name: Kayarad DPHA) as a radiation polymerizable component, and 2-methyl-1- (4- (methylthio) as a photopolymerization initiator. Phenyl-2-morpholinopropan-1-one (manufactured by Ciba Specialty Chemicals, trade name: Irgacure 907) 5% by mass, as a varnish adjusting solvent, 32% by mass of cyclohexanone was added and mixed with stirring for 60 minutes or more. A layer-forming varnish was prepared, which was coated on a 38 μm-thick base film (manufactured by Teijin DuPont Films, Inc., trade name: Teijin Purex A53) and heated at 110 ° C. for 10 minutes. After drying, the resulting film was made of polyethylene film (film thickness 100 μm) To obtain a base film pressure-sensitive adhesive layer together Ri.
Thereafter, the polyethylene film was peeled off so that the pressure-sensitive adhesive layer with the base film was in contact with the adhesive layer, and was pasted under conditions of room temperature (25 ° C.), linear pressure of 1 kg / cm, and speed of 0.5 m / min. Laminating step). Then, a circular precut process having a diameter of 290 mm was performed concentrically with the adhesive layer on the pressure-sensitive adhesive layer with a base film, and unnecessary portions of the pressure-sensitive adhesive layer were removed (first cutting step). This obtained the adhesive film for semiconductors as shown in FIG. In addition, in order to make the explanation easy to understand, only the main part has been described above. However, as shown in FIG. On top of this, an adhesive layer is formed and pre-cut processing is performed to remove unnecessary portions of the adhesive layer (the same applies hereinafter).

(Example 2)
Except that the shape of the adhesive layer was hexagonal in the first laminating step, the same operation as in Example 1 was performed to obtain an adhesive film for semiconductor use as shown in FIG.

Example 3
At the center in the width direction of the release substrate A, only the part having a diameter of 210 mm is subjected to mold release treatment, and the surface layer portion of the other surface is laminated with perfluorotridecanoic acid so that the thickness becomes 1 μm. Was made.
A semiconductor application in which the adhesive layer forming varnish described in Example 1 is applied only to the release treatment surface having a diameter of 210 mm on the entire surface of the release substrate C, and is intermittently formed at regular intervals of 278 mm in the length direction. An adhesive layer was produced (first lamination step). Except that, the same operation as in Example 1 was performed to obtain an adhesive film for semiconductor use as shown in FIG.

Example 4
A state in which the peeling substrate A described in Example 1 and a peeling substrate B having a film thickness of 360 μm (a product name: Teijin Purex Co., Ltd., manufactured by Teijin DuPont Films Co., Ltd.) that have been rolled through a circular portion having a diameter of 210 mm are completely adhered. The adhesive layer-forming varnish described in Example 1 was applied from the top surface of the release substrate B while holding the substrate, and was dried by heating at 140 ° C. for 5 minutes, and then the release substrate B was removed from the release substrate A. Then, an adhesive layer for semiconductor use in which an uncured circular adhesive layer having a film thickness of 50 μm was formed intermittently at regular intervals of 278 mm in the length direction was produced (first laminating step).
Except that, the same operation as in Example 1 was performed to obtain an adhesive film for semiconductor use as shown in FIG.

(Comparative Example 1)
Cyclohexanone was added to the composition obtained by blending with the composition shown in Table 1 (the blending unit is part by mass), and the mixture was stirred and mixed, and further kneaded for 90 minutes using a bead mill. This was mixed with (2) a high molecular weight component to obtain a varnish and vacuum degassed. The vacuum evacuated varnish (non-volatile content, 15% by mass) was applied on the entire surface of a polyethylene terephthalate film (Purex A31, PET film, manufactured by Teijin DuPont Films Co., Ltd.) having a thickness of 50 μm and treated at 140 ° C. Heat-dried for 5 minutes to produce an adhesive layer for a semiconductor having an uncured adhesive layer with a film thickness of 50 μm (first laminating step).
Except that the obtained adhesive layer was cut into a release substrate and circular precut processing with a diameter of 210 mm was performed (adhesive layer cutting step), the same operation as in Example 1 was performed, and FIG. A semiconductor adhesive film as shown was obtained.

[Evaluation of adhesive films for semiconductors]
The characteristics of the adhesive films for semiconductors produced in Examples 1 to 4 and Comparative Example 1 were evaluated by the following items. The evaluation results are shown in Table 1.

[Adhesive layer position accuracy (area ratio, displacement)]
As described above, using the adhesive film produced the semiconductor application adhesive film provided with the adhesive layer and the pressure-sensitive adhesive layer, the area ratio of the obtained adhesive layer when the area of the shape of the desired adhesive layer is 100 Was calculated and evaluated as an area ratio. Moreover, the average value of the positional deviation in the length direction of the peeling substrate was calculated and measured as the positional deviation (unit: mm).

[Pre-cut product yield]
An adhesive layer with a base film having a length of 460 m and a width of 300 mm is pre-cut to a diameter of 210 mm in the first laminating step, the adhesive layer with the base film is bonded, and the second laminating step and the second cutting step are performed. Then, when an adhesive film for a semiconductor was produced, the yield was calculated using the following mathematical formula.
(Pre-cut product yield) = [(Number of processed successfully) / (Total number of processed)] × 100

  Compared to Comparative Example 1 in which the adhesive layer was precut, Examples 1 to 4 formed by coating and drying have high product yields, and further, the steps such as precut processing are omitted, and the productivity is excellent by reducing the number of man-hours. In addition, when the pre-cut process is performed, when the cut is made in the pre-cut process, a fragment of the adhesive layer is generated and mixed into the semiconductor element, thereby causing a problem in the characteristics. By measuring the pre-cut product yield, the periphery of the adhesive layer of the adhesive film for semiconductor use obtained from 630 m was observed with a microscope, but no debris was seen. On the other hand, in Comparative Example 1, fragments of the adhesive layer were generated.

DESCRIPTION OF SYMBOLS 1 Wafer 2 Adhesive layer 3 Peeling base material 4 Adhesive layer 5 Base material of adhesive layer with a base film

Claims (8)

  A release substrate A, an adhesive layer disposed on the release substrate A, having a predetermined planar shape, and covering the adhesive layer and in contact with the release substrate A around the adhesive layer A laminate comprising a formed pressure-sensitive adhesive layer and having a predetermined shape, and an adhesive film for semiconductor use in which a plurality of the laminates are dispersed in the length direction on the release substrate A, wherein the release group An adhesive film for a semiconductor, wherein the adhesive layer is formed on the material A by applying and drying the adhesive layer intermittently at regular intervals in the length direction.   The adhesive layer includes (1) a thermopolymerizable component including an epoxy resin and an epoxy resin curing agent, and (2) a high molecular weight component having a weight average molecular weight including a functional monomer of 100,000 or more. The adhesive film for semiconductors according to claim 1.   The adhesive film for a semiconductor according to claim 2, wherein the high molecular weight component is a glycidyl group-containing (meth) acrylic copolymer, and the amount of the epoxy group-containing monomer is 0.5 to 50% by mass. .   The storage elastic modulus at 25 ° C of the adhesive layer is 10 to 10000 MPa, and the storage elastic modulus of the completely cured adhesive layer at 260 ° C is 0.5 to 1000 MPa. The adhesive film for semiconductors according to any one of the above.   It is a manufacturing method of the adhesive film for semiconductor applications in any one of Claims 1-4, Comprising: It apply | coats and dries an adhesive layer on the peeling base material A at regular intervals in the same shape and a length direction, and drying. A first laminating step for laminating, a second laminating step for laminating the pressure-sensitive adhesive layer so as to cover the adhesive layer having the predetermined planar shape and the peeling substrate A, and the release group of the pressure-sensitive adhesive layer A cut is made in a non-perpendicular direction with respect to the plane of the release substrate A from the surface opposite to the material A side until the release substrate A is reached, and the adhesive layer in the cut outer peripheral portion is removed, A first laminate that has a predetermined planar shape and an adhesive layer that covers the adhesive layer and includes a pressure-sensitive adhesive layer that is in contact with the release substrate A around the adhesive layer. The manufacturing method of the adhesive film for semiconductors characterized by including the cutting process of this.   In the method of manufacturing a semiconductor device using an adhesive film for semiconductors, the adhesive film for semiconductors is the adhesive film for semiconductors according to any one of claims 1 to 4, and the laminate is separated from the release substrate A. Peeling and attaching the laminated body to the semiconductor wafer from the surface on the adhesive layer side to obtain a semiconductor wafer with a laminated body, the semiconductor wafer with the laminated body at least the adhesive layer and the pressure-sensitive adhesive A dicing step of cutting the semiconductor wafer to a semiconductor element of a predetermined size by cutting to the interface with the layer, and irradiating the laminated body with a high energy ray to adhere the adhesive layer to the adhesive layer A pick-up step of picking up the semiconductor element together with the adhesive layer from the pressure-sensitive adhesive layer after reducing the force, and obtaining a semiconductor element with an adhesive layer; and The method of manufacturing a semiconductor device whose serial the semiconductor device in the adhesive layer-attached semiconductor element, characterized in that it comprises a bonding step of bonding via the adhesive layer to an adherend.   The method of manufacturing a semiconductor device according to claim 6, wherein the adherend is a support member for mounting a semiconductor element or another semiconductor element.   A semiconductor device manufactured by the method for manufacturing a semiconductor device according to claim 6.

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