JP2014045033A - Semiconductor device manufacturing method and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which inhibits cracks of a semiconductor chip and double die pickup by improving pickup performance of the semiconductor chip and inhibits sinking of an end face of an adhesive layer.SOLUTION: A semiconductor device manufacturing method comprises: a process of preparing a laminate in which an adhesive layer containing a radiation curable component is stacked on one surface of a semiconductor wafer; a process of cutting the semiconductor wafer of the laminate by cutting means into a plurality of individual pieces and forming incisions in the adhesive layer; a process of irradiating the laminate with radiation rays from the other surface side of the semiconductor wafer; a process of obtaining, from the laminate, semiconductor chips each including the individual piece of the semiconductor wafer which is cut into a plurality of pieces and irradiated with radiation rays, and a part of the adhesive layer stacked on each of the individual pieces; and a process of manufacturing the semiconductor device including the semiconductor chip.

Description

  The present invention relates to a semiconductor device manufacturing method and a semiconductor device.

  In the manufacturing method of a semiconductor device, a film-like adhesive (adhesive film) has come to be used for joining a semiconductor chip and a support substrate for chip mounting (see, for example, Patent Document 1). In this method of manufacturing a semiconductor device, an adhesive film is attached to the entire semiconductor wafer and then separated into pieces with a rotary blade to obtain a plurality of semiconductor chips with the adhesive film. And this semiconductor chip is fixed to a support base material and another semiconductor chip by thermocompression bonding, and the desired semiconductor device is obtained.

JP 2005-11839 A

  By the way, the semiconductor chip is becoming thinner, and for example, a semiconductor chip having a final thickness of 50 μm or less is used. In such a thin semiconductor chip, when it is separated (picked up) from a dicing tape after being separated into pieces with a rotary blade as in the prior art, peeling of the semiconductor chip is hindered by burrs accumulated on the cut portion, and the semiconductor chip May break. Further, in recent years, the use of a material with higher fluidity has been studied so as to absorb the surface step in the semiconductor chip and the supporting base material to be bonded and reliably fill the adhesive layer between both members. If an adhesive layer with high fluidity is used, the adhesive layers of adjacent semiconductor chips will be re-fused after cutting, causing a phenomenon that adjacent semiconductor chips are connected and picked up (double die pickup). There was a case.

  Moreover, when the material having high fluidity is used, the end surface of the adhesive layer is drawn to the inner side of the end surface of the semiconductor chip, and the reliability of the semiconductor device is lowered by the penetration of the sealing resin into the inner side. There was a problem.

  The present invention has been made to solve the above-described problems, and improves the pickup performance of a semiconductor chip, suppresses cracking of the semiconductor chip and double die pickup, and suppresses shrinkage at the end face of the adhesive layer. An object of the present invention is to provide a device manufacturing method and a semiconductor device.

  The method for manufacturing a semiconductor device according to the present invention includes a step of preparing a laminate in which an adhesive layer containing a radiation curing component is laminated on one surface of a semiconductor wafer, and the semiconductor wafer of the laminate is divided into a plurality of pieces by a cutting means. Cutting and cutting the adhesive layer, irradiating the laminated body with radiation from the other side of the semiconductor wafer, a plurality of semiconductor wafer pieces cut and irradiated with radiation, and the individual pieces A step of obtaining a semiconductor chip having a part of the adhesive layer laminated on the piece from the laminated body and a step of manufacturing a semiconductor device including the semiconductor chip are provided.

  In this manufacturing method, by irradiating radiation from the other surface side (surface side not in contact with the adhesive layer) of the semiconductor wafer cut into a plurality of individual pieces, the vicinity of the cut portion of the adhesive layer containing the radiation curing component and The accumulated burrs are cured. For this reason, when picking up a semiconductor chip including an adhesive layer, burrs are better cut off and good pick-up properties can be secured. As a result, cracking of the semiconductor chip is suppressed, and the yield at the time of manufacturing the semiconductor device is improved.

  Similarly, in the present manufacturing method, the cut portion of the laminate is in a state of being hardened from the peripheral portion, so that the tackiness of the adhesive layer near the end of the semiconductor chip is lowered, and the double die pickup phenomenon described above is caused. Can be suppressed. As a result, the pick-up property is further improved and the production yield is improved. In this manufacturing method, since the semiconductor wafer also functions as a mask, the region other than the cut portion of the stacked body is hard to be cured, and the adhesive layer of the semiconductor chip can maintain the adhesiveness.

  Moreover, according to this manufacturing method, since the end surface of the adhesive layer is in a state of being hardened, a semiconductor device in which the shrinkage is suppressed can be obtained. Conversely, excessive protrusion of the adhesive layer can be suppressed. Further, as the semiconductor chip becomes thinner, the semiconductor chip is likely to warp in a convex shape, and the above-described shrinkage becomes remarkable. However, according to this manufacturing method, the shrinkage can be sufficiently suppressed.

  In the manufacturing method of the present invention, in the step of preparing the laminate, a dicing tape may be further laminated on one surface (the surface not in contact with the semiconductor wafer) of the adhesive layer. Thereby, a semiconductor wafer is fixed more at the time of a cutting process, and handling property improves.

  In the manufacturing method of the present invention, the cut of the adhesive layer may be 1 to 99% of the thickness of the adhesive layer. By cutting 1 to 99% of the thickness of the adhesive layer, when the semiconductor chip is picked up, the burrs are better cut off and good pick-up properties can be secured.

  In the production method of the present invention, the thickness of the adhesive layer may be 1 to 150 μm from the viewpoint of ensuring good adhesion to the adherend and reducing the thickness of the entire semiconductor device.

  In the production method of the present invention, the adhesive layer may be a film. The film-like adhesive layer is excellent in handleability because it can be easily laminated on a semiconductor wafer.

  In the manufacturing method of the present invention, the finished thickness of the semiconductor wafer may be 15 to 200 μm. When the finished thickness of the semiconductor wafer is within the above range, the semiconductor chip and the semiconductor device are easily thinned.

  In the manufacturing method of the present invention, since the entire adhesive layer is not cut, clogging hardly occurs, and the cutting means may be a rotary blade.

  In the manufacturing method of the present invention, in the process of manufacturing the semiconductor device, the semiconductor chip may be heat-pressed to the supporting base material and the semiconductor chip may be sealed with a sealing resin. According to the present manufacturing method, the end surface of the adhesive layer of the semiconductor chip is prevented from being contracted, so that the sealing resin hardly enters between the semiconductor chip and the substrate, and the reliability of the semiconductor device can be easily maintained.

  The present invention provides an adhesive layer that is used in the above-described production method and includes a radiation-curable component. The semiconductor device of the present invention is manufactured by the above-described manufacturing method.

  A semiconductor device of the present invention is manufactured by the above-described manufacturing method, and includes a semiconductor chip including an adhesive layer cured body, a support base that supports the semiconductor chip via the adhesive layer cured body, and at least a part of the semiconductor chip. And a sealing resin intrusion suppressing portion is formed at an end of the adhesive layer cured body. In this semiconductor device, the sealing resin intrusion suppressing portion is formed at the end of the adhesive layer cured body, and the intrusion of the sealing resin between the semiconductor chip and the support base during manufacturing is suppressed. As a result, the reliability is excellent.

  According to the present invention, it is possible to provide a semiconductor device manufacturing method and a semiconductor device that improve the pick-up property of a semiconductor chip, suppress cracking of the semiconductor chip and double die pick-up, and suppress shrinkage at the end face of the adhesive layer. it can.

It is sectional drawing of one Embodiment of the semiconductor device which concerns on this embodiment. It is sectional drawing of a support base material. It is sectional drawing of a semiconductor chip. It is a figure which shows the process of installing an adhesive layer and a semiconductor wafer on a dicing tape. It is a figure which shows the process of dicing the semiconductor wafer of FIG. It is a figure which shows the process of irradiating a semiconductor wafer and the contact bonding layer cut | disconnected in FIG. 5 with a radiation. It is a figure which shows the process of picking up a semiconductor chip after the radiation irradiation process of FIG. It is a figure which shows the process of adhere | attaching a semiconductor chip on a support base material. It is a figure which shows the process of connecting electrodes with a bonding wire.

  DESCRIPTION OF EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. In the figure, the same or equivalent components are denoted by the same reference numerals, and repeated description is omitted as appropriate.

  First, the semiconductor device according to the present embodiment will be described. As shown in FIGS. 1 to 3, the semiconductor device 1 includes a support base 2 and a semiconductor chip 10, and is sealed with a mold part (encapsulated resin cured body) 6.

  As shown in FIGS. 1 and 2, the support base material 2 is a plate-like member, and includes a substrate 3 and a plurality of electrodes 4 provided on one surface 3 a of the substrate 3. . A through hole 3c that opens from one surface 3a to the other surface 3b is formed in a portion of the substrate 3 that faces the electrode 4. Each through hole 3c is formed with a solder portion 4a filled with solder so as to be in contact with the lower surface of the electrode 4. The solder portion 4a bulges out from the other surface 3b of the substrate 3 in a hemispherical shape.

  As shown in FIGS. 1 to 3, the semiconductor chip 10 includes a chip body 13, an adhesive layer cured body 14 b obtained by curing an individual adhesive layer 14 laminated on the lower surface 13 a of the chip body 13, and a chip. A plurality of electrodes 15 provided on an upper surface 13b of the main body 13; The adhesive layer cured body 14b of the semiconductor chip 10 forms the sealing resin intrusion suppressing portion (radiation curing portion) 14a at the end by a manufacturing method described later.

  As shown in FIGS. 1 to 3, each semiconductor chip 10 is bonded to the upper surface 2 a of the support base 2 or the upper surface 13 b of another semiconductor chip 10 with an adhesive layer 14 in a state of overlapping each other. . The electrode 15 of each semiconductor chip 10 and the electrode 4 of the support base 2 or the electrode 15 of another semiconductor chip 10 are connected to each other by a bonding wire 5. On the upper surface 2 a of the support base 2, a mold part 6 is formed by sealing resin, and each semiconductor chip 10 is sealed in the mold part 6.

  Next, a method for manufacturing the semiconductor device 1 having the above-described configuration will be described.

  First, the semiconductor chip 10 included in the semiconductor device 1 is manufactured by the steps shown in FIGS. Specifically, first, a semiconductor wafer 30, an adhesive layer 40 (a part of the adhesive layer 40 laminated on the semiconductor chip 10 is indicated as “adhesive layer 14”), a dicing tape 50, and a ring frame 60 are prepared. 4 to 7, the illustration of the plurality of electrodes 15 on the semiconductor wafer 30 is omitted for ease of explanation.

[Semiconductor wafer]
The semiconductor wafer 30 is not particularly limited, but is a silicon wafer, for example. The semiconductor wafer 30 is affixed with a back grind tape for protecting the integrated circuit on the integrated circuit forming surface, and in this state, the back surface of the semiconductor wafer 30 is ground with a grinder. It is preferable to make it thin by removing it by a method such as wet etching, dry polishing, or plasma etching.

  From the viewpoint of reducing the thickness of the semiconductor device, the finished thickness of the semiconductor wafer 30 is preferably 15 to 200 μm, more preferably 15 to 125 μm, and still more preferably 15 to 75 μm. The processing methods such as wet etching, dry polishing, and plasma etching are slower in processing speed in the thickness direction of the semiconductor wafer 30 than the grinding speed by the grinder, but damage to the semiconductor wafer is caused by the grinder. There is an effect that it is smaller than grinding. Furthermore, the damage layer inside the semiconductor wafer 30 generated by grinding by the grinder can be removed, and there is an effect that the semiconductor wafer 30 and the semiconductor chip 10 are hardly broken.

[Adhesive layer]
The adhesive layer 40 is prepared as a film or a semi-cured state after applying a liquid material. The film-like adhesive layer 40 is prepared by preparing a varnish (mixture) containing each component described later, applying the prepared varnish on a separate film (for example, polyethylene terephthalate film) that has been subjected to a release treatment, and subjecting it to a heat treatment. It is produced by. When used as a die bonding film, for example, it can be used as a circular film. In addition, you may produce as an adhesive sheet of the integral structure which laminated | stacked the film-like adhesive layer 40 on the dicing tape 50 mentioned later.

  The liquid adhesive layer 40 is prepared by kneading the same materials as described above to prepare a varnish, and applying the prepared varnish to the back surface 30a of the semiconductor wafer 30 using a spin coater or the like. Next, it can be produced by applying heat or radiation to bring the applied varnish into a semi-cured state. The varnish can also be heated during kneading. Further, the application to the semiconductor wafer 30 can be performed by spray coating, screen printing, ink jet coating or the like alone or in combination other than spin coating.

  The adhesive layer 40 is not particularly limited as long as it is an adhesive layer containing a radiation curing component. For example, the adhesive layer 40 contains a mixture (adhesive composition) containing an epoxy resin, a curing agent and a curing accelerator as constituent components. Is preferred.

  The epoxy resin is preferably a compound having two or more epoxy groups. The epoxy resin is preferably a phenol glycidyl ether type epoxy resin from the viewpoint of curability and cured product characteristics. Examples of phenolic glycidyl ether type epoxy resins include bisphenol A, bisphenol AD, bisphenol S, bisphenol F or a condensate of halogenated bisphenol A and epichlorohydrin, glycidyl ether of phenol novolac resin, glycidyl ether of cresol novolac resin and bisphenol. A novolak resin glycidyl ether. Among these, novolac type epoxy resins (such as glycidyl ether of cresol novolac resin and glycidyl ether of phenol novolac resin) are preferable in that the cured product has a high cross-linking density and can increase the adhesive strength during heating of the film. These can be used singly or in combination.

  In this embodiment, an epoxy resin may function as a radiation curing component. The term “radiation curable component” as used herein refers to a component that can be cured by irradiation with radiation such as ultraviolet rays, electron beams, X-rays, β rays, or γ rays. Moreover, you may contain a radiation hardening component separately from an epoxy resin.

  Examples of epoxy resin curing agents include phenolic compounds, aliphatic amines, alicyclic amines, aromatic polyamines, polyamides, aliphatic acid anhydrides, alicyclic acid anhydrides, aromatic acid anhydrides, dicyandiamide, Examples include organic acid dihydrazide, boron trifluoride amine complex, imidazoles and tertiary amines. Among these, phenol compounds are preferable, and phenol compounds having two or more phenolic hydroxyl groups are particularly preferable. More specifically, a naphthol novolak resin and a trisphenol novolak resin are preferable. When these phenolic compounds are used as a curing agent for an epoxy resin, it is possible to effectively reduce the contamination of the chip surface and the device due to heating during the production of the semiconductor device and the generation of outgas which causes odor.

  Examples of the epoxy resin curing accelerator include imidazoles and phosphine compounds. Among these, imidazole or TPPK (tetraphenylphosphonium tetraphenylborate) is preferably used.

  The adhesive layer 40 may contain a base resin and a filler. Although base resin will not be specifically limited if it is excellent in compatibility with an epoxy resin, For example, an acrylic rubber, a polyimide, etc. can be used.

  The filler is not particularly limited as long as it does not adversely affect other components, but is preferably an inorganic filler. More specifically, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, alumina, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica, An inorganic filler containing at least one inorganic material selected from the group consisting of amorphous silica and antimony oxide is preferred. Among these, alumina, aluminum nitride, boron nitride, crystalline silica, and amorphous silica are preferable for improving thermal conductivity. For the purpose of adjusting melt viscosity and imparting thixotropic properties, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, alumina, crystalline silica and non-crystalline silica Crystalline silica is preferred. In order to improve moisture resistance, alumina, silica, aluminum hydroxide and antimony oxide are preferred. These can be used singly or in combination.

  In the present embodiment, the thickness of the adhesive layer 40 is preferably 1 to 150 μm, more preferably 3 to 125 μm, further preferably 5 to 100 μm, and particularly preferably 7 to 80 μm. . If the thickness of the adhesive layer 40 is 1 μm or more, it is easy to ensure good adhesion to the adherend, and if it is 150 μm or less, the thickness of the entire semiconductor device is easily reduced.

[Dicing tape]
The dicing tape 50 is prepared including a base film 51 and an adhesive layer 52 laminated on the base film 51. As the base film 51, for example, a polyethylene film, a polypropylene film, a polyvinyl chloride film, a polyethylene terephthalate film, an ethylene-vinyl acetate copolymer film, or an ionomer resin film can be used. For example, the thickness of the base film 51 is preferably about 15 to 200 μm, more preferably 40 to 150 μm, and still more preferably 60 to 120 μm.

  The adhesive layer 52 of the dicing tape 50 is disposed so as to cover the entire one main surface 51 a of the base film 51. 5-50 micrometers is preferable, as for the thickness of the adhesion layer 52, 5-40 micrometers is more preferable, and 5-30 micrometers is further more preferable. As an adhesive which comprises an adhesion layer, an acrylic adhesive, a rubber adhesive, and a silicone adhesive are used, for example.

  The pressure-sensitive adhesive layer 52 can be used without particular limitation as long as it has a pressure-sensitive adhesive property that allows the dicing tape 50 to be easily peeled off from the adhesive layer 40 in a process (pickup process) for obtaining a semiconductor chip to be described later. An adhesive pressure-sensitive adhesive layer can be used. The upper limit value of the adhesion between the adhesive layer 52 and the adhesive layer 40 is preferably 0.6 N / 25 mm or less, more preferably 0.5 N / 25 mm or less, and further preferably 0.4 N / 25 mm or less. If the upper limit value of both adhesion forces is within the above range, peeling between the pressure-sensitive adhesive layer 52 and the adhesive layer 40 is facilitated in a pickup process described later.

  On the other hand, the lower limit value of the adhesion between the adhesive layer 52 and the adhesive layer 40 is preferably 0.01 N / 25 mm or more, more preferably 0.03 N / 25 mm or more, and even more preferably 0.05 N / 25 mm or more. When the lower limit value of the adhesion between the two is within the above range, it is possible to sufficiently suppress the adhesive layer 40 from peeling from the adhesive layer 52 during dicing described later.

  The adhesive force between the adhesive layer 52 and the adhesive layer 40 is, for example, peeled off at a rate of 200 mm / min in the vertical direction using a “Tensilon tensile strength tester RTA-100 type” manufactured by Orientec Co., Ltd. (90 ° It can be determined by measuring the peeling force when peeling.

  The pressure-sensitive adhesive constituting the pressure-sensitive adhesive layer 52 may contain a radiation curable component, like the adhesive layer 40. According to the radiation irradiation in the manufacturing method to be described later, the adhesiveness of the irradiated part of the adhesive layer 52 can be reduced, and the peelability between the cut semiconductor chip 10 and the adhesive layer 52 is improved. It becomes easy to secure the pick-up property.

[Ring frame]
The ring frame 60 prepares a molded body made of metal or plastic. The ring frame 60 has, for example, a substantially annular shape, and a flat cutout (not shown) for guide is formed on a part of the outer periphery of the ring frame 60. The ring frame 60 has an opening at the center. The inner diameter dimension (diameter) of the opening of the ring frame 60 is preferably slightly larger than the wafer diameter of the semiconductor wafer 30 to be diced. The shape of the ring frame 60 is not limited to an annular shape, and various shapes conventionally used (for example, a rectangular shape) may be used.

(Process for producing a laminate)
After the preparation of the semiconductor wafer 30 and the like as described above, an annular ring frame 60 is set on the dicing tape 50 as shown in FIG. Further, the semiconductor wafer 30 is set on the inner portion of the ring frame 60 of the dicing tape 50 via the film-like adhesive layer 40. At this time, the dicing tape 50 protrudes outside the outer edge of the adhesive layer 40. With such an arrangement, a stacked body A in which the semiconductor wafer 30, the adhesive layer 40, and the dicing tape 50 are stacked in this order is manufactured (prepared).

In addition, when using the film-like adhesive layer 40 with a separate film, for example, the laminate A in which the semiconductor wafer 30, the adhesive layer 40, and the dicing tape 50 are laminated by the method shown in the following (1) or (2). Can be obtained.
(1) First, the film-like adhesive layer 40 with a separate film and the semiconductor wafer 30 are bonded together. Next, the separate film of the film-like adhesive layer 40 with a separate film is peeled off, and the adhesive layer 52 of the dicing tape 50 and the film-like adhesive layer 40 are bonded together.
(2) First, the film-like adhesive layer 40 with a separate film and the adhesive layer 52 of the dicing tape 50 are bonded together. Next, the separate film of the film-like adhesive layer 40 with a separate film is peeled off, and the film-like adhesive layer 40 (the side on which the separate film is attached) and the semiconductor wafer 30 are bonded together.

Moreover, when using the liquid contact bonding layer 40, the laminated body A by which the semiconductor wafer 30, the contact bonding layer 40, and the dicing tape 50 were laminated | stacked by the method shown to the following (3) can be obtained.
(3) A varnish (liquid varnish) is applied to the back surface 30a of the semiconductor wafer 30 by spin coating or the like, and is heated or irradiated to give a semi-cured state. The laminated body A is obtained by bonding the adhesive layer 52 of the dicing tape 50 to the surface.

(Process of cutting a part of the thickness of the semiconductor wafer and the adhesive layer)
Next, as shown in FIG. 5, the semiconductor wafer 30 included in the above-described stacked body A is cut with the rotary blade B of the cutting device (cutting means, dicer), and a plurality of chip bodies 13 which are a plurality of pieces. Divide into Further, the adhesive layer 40 is also cut by a cutting means (part of the adhesive layer 40 is cut). As shown in FIG. 5, in the manufacturing method of the present embodiment, since the method of leaving a part without completely cutting the adhesive layer 40 (half-cut method) is used, the divided chip body 13 is: It is held by the adhesive layer 40. In addition, below the region 30c cut by the rotary blade B, burrs (not shown) made of cut pieces of the adhesive layer 40 generated by cutting are accumulated.

  The cut of the adhesive layer is preferably 1 to 99% of the thickness of the adhesive layer (height in the thickness direction of the adhesive layer), more preferably 3 to 85%, and 5 to 80%. Further preferred.

  As the dicer and the rotary blade B (blade) used when cutting the semiconductor wafer 30, commercially available ones can be used. As the dicer, for example, a full automatic dicing saw 6000 series and a semi-automatic dicing saw 3000 series manufactured by DISCO Corporation can be used. As the blade, for example, a dicing blade NBC-ZH05 series or NBC-ZH series manufactured by DISCO Corporation can be used.

  In the step of cutting the laminate A, for example, not only a rotary blade such as a full automatic dicing saw 6000 series manufactured by Disco Corporation, but also a laser such as a full automatic laser saw 7000 series manufactured by Disco Corporation is used. May be cut.

(Process to irradiate radiation)
When the cutting process of the semiconductor wafer 30 is completed, next, as shown in FIG. 6, the semiconductor wafer 30 (chip body 13) is applied to the stacked body A (a plurality of chip bodies 13) separated by the rotary blade B. ) Is irradiated from the upper surface side (side where the adhesive layer 40 is not disposed). That is, the radiation L is irradiated from the radiation source R to the chip body 13 that has been separated into pieces from the direction in which the cut is made in the dicing process. The irradiated radiation L is blocked by the chip body 13 at a portion located below the chip body 13, but passes through the region 30 c formed by cutting and irradiates the vicinity of the cut portion of the adhesive layer 40.

  By this radiation L irradiation, the burrs (including the cut pieces of the semiconductor wafer 30 and the adhesive layer 40) deposited in the vicinity of the cut portion of the adhesive layer 40 and the vicinity thereof are cured to form the radiation curing portion 14a. In addition, as a kind of radiation, for example, any of ultraviolet rays, electron beams, X-rays, β rays, γ rays and the like may be used, but radiation corresponding to the curable material included in the adhesive layer 40 is used. is necessary.

The radiation source R is not particularly limited as long as it emits radiation such as ultraviolet rays. For example, a high-pressure mercury lamp or a metal halide lamp can be used. Further, the radiation dose of the radiation L is not particularly limited as long as it is an amount that can be cured burrs, for example, preferably 100~5000mJ / cm ^2, more preferably 200~4000mJ / cm ^2, 300~3000mJ / cm ² is more preferable.

(Picking up process)
After curing the cut portion of the adhesive layer 40 by irradiating with radiation, the semiconductor chip 10 with the adhesive layer 14 is peeled off at the interface between the dicing tape 50 and the adhesive layer 40 as shown in FIG. Picked up in the direction shown in. Thereby, a plurality of semiconductor chips 10 are acquired. In the semiconductor chip 10 shown in FIG. 7, the step due to the cutting is illustrated in order to emphasize the generation of burrs due to the radiation curing portion 14 a and the cutting process, but may be substantially flat so that it cannot be recognized. .

(Step of obtaining a crimped body)
When a plurality of semiconductor chips 10 are obtained, next, as shown in FIG. 8, the semiconductor chip 10 is mounted on the support base 2 (substrate with wiring) or another semiconductor chip 10. Then, the semiconductor chip 10 with the adhesive layer 14 and the support base 2 or another semiconductor chip 10 are heat-pressed at 60 to 150 ° C. via the adhesive layer 14 of the semiconductor chip 10 to obtain a crimped body C. (See FIG. 9). For thermocompression bonding, for example, a rubber or metal crimping jig can be used. If the heating temperature is 60 ° C. or higher, good adhesion to the adherend can be secured, and if it is 150 ° C. or lower, excessive bleeding out of the adhesive layer 14 during press bonding can be suppressed. From such a viewpoint, the heating temperature in this step is more preferably 70 to 140 ° C, and further preferably 80 to 130 ° C. Further, from the viewpoint of shortening the time required for production and adhesion to the adherend, the thermocompression bonding time is preferably 0.5 to 5.0 seconds, more preferably 0.5 to 4.0 seconds, More preferably, -3.0 seconds.

(Step of curing the adhesive layer)
The pressure-bonded body C obtained by the above process may be heated to cure the adhesive layer 14 in the semiconductor chip 10. For example, an oven such as a clean oven that is generally commercially available can be used for raising the temperature and keeping the temperature. The temperature and time of temperature increase and heat retention are not particularly limited as long as the adhesive layer 14 can be cured. For example, the temperature increase is preferably 10 to 1 hour at 80 to 150 ° C, more preferably 20 to 50 minutes at 90 to 140 ° C. preferable. For example, the heat retention is preferably 80 to 150 ° C. for 30 minutes to 2 hours, more preferably 90 to 140 ° C. for 50 to 90 minutes.

  After the adhesive layer 14 is cured, the semiconductor chip 10 with the adhesive layer cured body 14b is connected to the electrode 4 on the support substrate 2 through the bonding wires 5, as shown in FIG. Then, the stacked body A including a plurality of semiconductor chips 10 (in the case of three in FIG. 1, for example, 16 semiconductor chips 10 may be stacked) is sealed with a sealing resin, and the semiconductor shown in FIG. Device 1 is obtained. Examples of the semiconductor device 1 thus obtained include a portable music player (MP3) and a flash memory used for an SD card.

As described above, in the method for manufacturing the semiconductor device 1, by irradiating the radiation L, the vicinity of the cut portion of the adhesive layer 40 and the accumulated burrs are cured. Thus, good pick-up properties can be ensured.
Moreover, since the cut portion of the laminate is in a state where the hardening has proceeded from the peripheral portion by irradiation with the radiation L, the tackiness of the end portion of the adhesive layer 14 is reduced, so when picking up the semiconductor chip 10, A phenomenon (double die pickup) in which adjacent adhesive layers 14 are connected by heat and picked up is also suppressed.
Even when a material with high fluidity is used, the end portion (end surface) of the adhesive layer 14 is in a cured state by irradiation with the radiation L, so that the end surface of the adhesive layer 14 is the end surface of the semiconductor chip 10. It can suppress pulling inward. Conversely, excessive protrusion of the adhesive layer 14 can be suppressed. Further, as the semiconductor chip becomes thinner, the semiconductor chip tends to warp in a convex shape and the above-mentioned shrinkage becomes remarkable, but according to the present manufacturing method, the problem is less likely to occur.
Moreover, the hardened edge part of the contact bonding layer 14 functions as a sealing resin penetration | invasion suppression part. In other words, even if the sealing resin is sealed, air is not trapped in the recess due to the drawing, and problems such as damage to the semiconductor chip surface can be suppressed by the sealing resin entering the recessed portion. .

  Although the semiconductor device manufacturing method and the semiconductor device embodiment according to the present invention have been described above, the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the invention. It is.

  For example, in the above-described embodiment, the epoxy resin is exemplified as the constituent component of the adhesive layer, but other resins may be used.

  EXAMPLES Hereinafter, although an Example demonstrates this invention in detail, this invention is not restrict | limited to these.

<Preparation of film adhesive layer>
Each material for producing a film adhesive layer (adhesive film) for a semiconductor device was prepared as follows.

(A) Base resin (thermoplastic component)
In a 300 mL flask equipped with a thermometer, a stirrer, a cooling pipe and a nitrogen inflow pipe, 7.6 g (0.7 mol) of 4,4′-oxydiphthalic dianhydride (manac, product name: ODPA-M), Decamethylene bistrimellitic dianhydride (6.5 g (0.3 mol) manufactured by Kurokin Kasei Co., Ltd.), 1,3-bis (3-aminopropyl) -1,1,3,3-tetramethyldisiloxane (Toray Industries, Inc.) A reaction solution charged with 5 g (0.5 mol) of Dow Corning Silicone, product name: BY16-871EG) and 30 g of N-methyl-2-pyrrolidone was stirred. Thereafter, heating was performed at 180 ° C. while blowing nitrogen gas to remove azeotropically 50% of N-methyl-2-pyrrolidone together with water to obtain a polyimide resin (base resin). When the obtained polyimide resin was measured by GPC (gel permeation chromatography), the weight average molecular weight (Mw) was 52,800 in terms of polystyrene. The equipment etc. in GPC measurement are as follows.
Equipment used: Hitachi L-6000 type (manufactured by Hitachi, Ltd.)
Detector: L-40000UV (manufactured by Hitachi, Ltd.)
Column: Gelpack GL-S300MDT-5 manufactured by Hitachi Chemical Co., Ltd. (two in total)
Sample concentration: 5 mg / ml
Eluent DMF / TFH = 1/1 + phosphoric acid 0.06M + lithium bromide 0.06M
Moreover, it was 72 degreeC when Tg of the obtained polyimide resin was measured by tan-delta computed from a viscoelastic peak. Viscoelasticity measurement conditions are as follows.
Measuring apparatus: TS Instruments viscoelasticity analyzer “RSA-3” (trade name)
Measurement temperature range: -50 ° C to 300 ° C
Frequency: 1HZ
Temperature rise: 5 ° C / min

(B) Epoxy resin 2- [4- (2,3epoxypropoxy) phenyl] -2- [4- [1,1-bis [4-([2,3epoxypropoxy] phenyl)] ethyl] phenyl] propane (Product name: VG3101L, manufactured by Printec Co., Ltd.)

(C) Curing agent 4,4 ′-(1- (4- (1- (4-hydroxyphenyl) -1-methylethyl) -phenyl) -ethylidene) -bisphenol (product name: TrisP-PA-MF , Honshu Chemical Industry Co., Ltd.)

(D) Curing accelerator 2-phenyl-4-methylimidazole (Product name: 2P4MZ, manufactured by Shikoku Kasei Kogyo Co., Ltd.)

(E) Filler Silicon oxide (average particle size 5 μm) (Product name: H26, manufactured by CIK Nanotech)
Silicon oxide (average particle size 0.5 μm) (Product name: H27, manufactured by CIK Nanotech)

(F) Other components Nadiimide resin: Xylylene-type bisallylnadiimide having a structure represented by the following general formula (1) (Product name: BANI-X, manufactured by Maruzen Petrochemical)

  Acrylate: Ethoxylated bisphenol F diacrylate (Product name: R-712, manufactured by Nippon Kayaku)

  Bismaleimide: 2,2'-bis [4- (4-maleimidophenoxy) phenyl] propane (product name: BMI-80, manufactured by Kay Kasei)

Initiator:
(2,4,6-trioxo-1,3,5-triazine-1,3,5 (2H, 4H, 6H) -triyl) tri-2,1-ethanediyltriacrylate (product name: A9300, Shin-Nakamura Chemical Co., Ltd.)
1,1-bis (tert-butylperoxy) cyclohexane (product name: Trigonox 22-70E, manufactured by Kayaku Akzo Co., Ltd.)

  Next, 13 parts by mass of epoxy resin, 2 parts by mass of curing accelerator, 15 parts by mass of nadiimide resin, 15 parts by mass of acrylate, 5 parts by mass of curing agent, 20 parts by mass of bismaleimide and 1 part by mass of initiator are combined with 100 parts by mass of base resin. Then, a filler (containing H26 and H27 in a ratio of 2: 1) was added to 40% by mass with respect to the total mass to prepare a film coating varnish.

  This film coating varnish was applied on a polyethylene terephthalate (PET) film that had been subjected to a release treatment, and heated at 120 ° C. for 8 minutes. As a result, a film-like adhesive layer (die bonding film) having a thickness of 25 μm was obtained on the polyethylene terephthalate film.

<Production of dicing tape>
First, an acrylic copolymer was obtained by a solution polymerization method using 2-ethylhexyl acrylate and methyl methacrylate as main monomers and hydroxyethyl methacrylate and acrylic acid as functional group monomers. The synthesized acrylic copolymer had a weight average molecular weight of 400,000 and Tg of −38 ° C. A biaxially stretched polyester film separator prepared by preparing a pressure-sensitive adhesive solution in which 15 parts by weight of a polyfunctional isocyanate crosslinking agent (manufactured by Mitsubishi Chemical Corporation) is blended with 100 parts by weight of this acrylic copolymer, and applying a silicone release agent The coating was dried so that the thickness of the pressure-sensitive adhesive when dried was 10 μm. Further, a polyolefin film (thickness: 100 μm) was laminated on the pressure-sensitive adhesive surface. The multilayer film was allowed to stand at room temperature for 1 week and sufficiently aged, and then used for the test.

<Production of evaluation wafer>
A varnish (manufactured by Hitachi Chemical DuPont Microsystems Co., Ltd., product name: HD-8820) was formed on the surface of the semiconductor wafer as a circuit protective layer. First, 10 g of varnish was dropped on the surface of a semiconductor wafer having a diameter of 12 inches and rotated at 1000 rpm for 10 seconds and then at 2000 rpm for 30 seconds to apply the varnish to the entire wafer surface. Next, pre-baking is performed at 120 ° C. for 3 minutes, and curing is performed by heating at 320 ° C. for 60 minutes in a nitrogen atmosphere using an inert gas oven INH-9CD-S manufactured by Koyo Thermo Systems Co., Ltd., and a circuit protective layer having a thickness of 7 μm A semiconductor wafer was obtained. Next, the back surface finish was dry-polished, and the semiconductor wafer including the circuit protective layer was ground to 50 μm (finished thickness) to obtain an evaluation wafer.

<Production of semiconductor chip with adhesive film>
Each adhesive film for a semiconductor device and the wafer for evaluation obtained as described above were bonded at 60 ° C. using a hot roll laminator (manufactured by JCM Corporation, product name: DM-300-H). And the PET film of an adhesive film was peeled, the adhesive film and the adhesion layer of the dicing tape were bonded together, and the sample (semiconductor wafer with an adhesive sheet for semiconductor device manufacture) was obtained.

<Dicing process>
Next, each sample was cut | disconnected using the full auto dicer "DFD-6361" by DISCO Corporation. In cutting the sample, an annular ring frame having an opening with a diameter of 250 mm was used. In addition, a single cut method in which processing is completed with one blade was employed, and a dicing blade “NBC-ZH104F-SE 27HDBB” manufactured by DISCO Corporation was used as the blade. The cutting conditions were a blade rotation speed of 45,000 rpm and a cutting speed of 50 mm / s. The blade height at the time of cutting was set to cut the adhesive film from 0 to 25 μm (110 to 135 μm). The semiconductor wafer was cut into a size of 10 × 10 mm to obtain a semiconductor chip with an adhesive film.

<Evaluation of Bali>
In this dicing step, the chip with the adhesive film is peeled from the dicing tape after dicing, and the dicing tape surface and the side surface of the chip with the adhesive film are observed using an electron microscope (manufactured by Philips, product name: XL30). Those with no burr were judged as good (A) and those with no burr were judged as bad (B).

<Pickup evaluation>
Each semiconductor chip with an adhesive film produced by the above method was evaluated for pickup properties using “Flexible Die Bonder DB-730” manufactured by Renesas East Japan Semiconductor.

  Specifically, “RUBBER TIP 13-087E-33 (size: 10 × 10 mm)” manufactured by Micromechanics is used for the pickup collet, and “EJECTOR NEEDLE SEN2-83-05” manufactured by Micromechanics is used for the push-up pin (diameter: 0.7 mm, tip shape: semicircle with a diameter of 350 μm) ”. Nine push-up pins were arranged with a pin center interval of 4.2 mm. The pick-up speed was 10 mm / s and the pick-up height was 400 μm. In this way, 20 chips are picked up continuously, and chip breaks, pickup mistakes, and double die pick-ups are not good (A). Even if one chip is chip broken or pick-up mistakes are bad (B) It was.

<Evaluation of adhesion layer sink marks>
The semiconductor device with an adhesive layer (semiconductor chip) obtained by the pickup property evaluation was laminated on a substrate with wiring. Specifically, using a flexible die bonder (manufactured by Hitachi High-Tech, product name: DB-730), laminating (crimping) at a hot plate surface temperature of 80 to 120 ° C., a load of 10 N (0.1 MPa), and a time of 1 second. Performed (uncured sample). Furthermore, the laminated uncured sample was heat-treated using a clean oven (manufactured by ESPEC, product name: CLEAN OVEN PVHC-211) to prepare a cured adhesive layer sample. The conditions for curing the adhesive layer were such that the temperature was raised from room temperature to 120 ° C. in 30 minutes and then held at 120 ° C. for 1 hour. About the cured sample and the uncured sample of each example and comparative example, the side surface of the chip was observed using an environmentally friendly electron microscope (manufactured by Philips, product name: XL-30), and the adhesive layer was inside the chip end. (B), those that protrude moderately from the end of the chip (extruding of uncured sample during crimping, Regarding the cured sample, the protrusion at the time of curing was defined as good (A).

  The cutting conditions and ultraviolet irradiation conditions of Examples 1 to 5 and Comparative Examples 1 to 4 are as follows.

Example 1
A semiconductor wafer, a film-like adhesive layer and a dicing tape are laminated in order from the top, and after cutting under the condition of cutting to a part of the film-like adhesive layer with a rotary blade (3 μm cut into the film-like adhesive layer), ultraviolet rays are emitted from the semiconductor chip side. Was irradiated with 2,000 mJ / cm ² . Thereafter, it was pressure-bonded to the substrate at a hot plate surface temperature of 100 ° C.

(Example 2)
A semiconductor wafer, a film-like adhesive layer, and a dicing tape are laminated in order from the top, cut under conditions that cut to a part of the film-like adhesive layer with a rotary blade (cut into the film-like adhesive layer by 19 μm), and then ultraviolet rays from the semiconductor chip side Was irradiated with 2,000 mJ / cm ² . Thereafter, it was pressure-bonded to the substrate at a hot plate surface temperature of 100 ° C.

(Example 3)
A semiconductor wafer, a film-like adhesive layer, and a dicing tape are laminated in order from the top, cut under conditions that cut to a part of the film-like adhesive layer with a rotary blade (15 μm cut into the film-like adhesive layer), and then ultraviolet rays from the semiconductor chip side Was irradiated with 2,000 mJ / cm ² . Thereafter, it was pressure-bonded to the substrate at a hot plate surface temperature of 100 ° C.

Example 4
A semiconductor wafer, a film-like adhesive layer, and a dicing tape are laminated in order from the top, cut under conditions that cut to a part of the film-like adhesive layer with a rotary blade (15 μm cut into the film-like adhesive layer), and then ultraviolet rays from the semiconductor chip side Was irradiated with 2,000 mJ / cm ² . Thereafter, it was pressure-bonded to the substrate at a hot plate surface temperature of 120 ° C.

(Example 5)
A semiconductor wafer, a film-like adhesive layer, and a dicing tape are laminated in order from the top, cut under conditions that cut to a part of the film-like adhesive layer with a rotary blade (15 μm cut into the film-like adhesive layer), and then ultraviolet rays from the semiconductor chip side Was irradiated with 2,000 mJ / cm ² . Thereafter, it was pressure-bonded to the substrate at a hot plate surface temperature of 80 ° C.

(Comparative Example 1)
The procedure was the same as in Example 1 except that ultraviolet rays were not irradiated.

(Comparative Example 2)
The procedure was the same as in Example 2 except that ultraviolet rays were not irradiated.

(Comparative Example 3)
The same procedure as in Example 3 was performed except that ultraviolet rays were not irradiated.

(Comparative Example 4)
The same procedure as in Example 4 was performed except that ultraviolet rays were not irradiated.

  In each of Examples 1 to 5, the dicing property and the pickup property were good, and the occurrence of shrinkage was suppressed. On the other hand, all of Comparative Examples 1 to 4 have poor pick-up properties, and shrinkage at the end of the chip occurred.

DESCRIPTION OF SYMBOLS 1 ... Semiconductor device, 2 ... Support base material, 10 ... Semiconductor chip, 14, 40 ... Adhesion layer, 14a ... Radiation hardening part (encapsulation resin penetration suppression part), 14b ... Adhesion layer hardening body, 30 ... Semiconductor wafer, 50 ... Dicing tape, A ... Laminated body, B ... Rotating blade, L ... Radiation.

Claims (11)

Preparing a laminate in which an adhesive layer containing a radiation curing component is laminated on one surface of a semiconductor wafer;
Cutting the semiconductor wafer of the laminate into a plurality of pieces by a cutting means, and cutting the adhesive layer;
Irradiating the laminated body with radiation from the other surface side of the semiconductor wafer;
Obtaining a semiconductor chip having a piece of the semiconductor wafer cut into a plurality of pieces and irradiated with radiation and a part of the adhesive layer laminated on the piece, from the laminate;
Manufacturing a semiconductor device including the semiconductor chip;
A method for manufacturing a semiconductor device comprising:   The manufacturing method according to claim 1, wherein in the step of preparing the laminated body, a dicing tape is laminated on one surface of the adhesive layer.   The manufacturing method according to claim 1 or 2, wherein the cut of the adhesive layer is 1 to 99% of the thickness of the adhesive layer.   The manufacturing method according to claim 1, wherein the adhesive layer has a thickness of 1 to 150 μm.   The manufacturing method as described in any one of Claims 1-4 whose said contact bonding layer is a film form.   The manufacturing method as described in any one of Claims 1-5 whose finishing thickness of the said semiconductor wafer is 15-200 micrometers.   The manufacturing method according to claim 1, wherein the cutting means is a rotary blade.   The manufacturing method according to any one of claims 1 to 7, wherein, in the step of manufacturing the semiconductor device, the semiconductor chip is thermocompression-bonded to a supporting base material, and the semiconductor chip is sealed with a sealing resin.   It is an contact bonding layer used for the manufacturing method as described in any one of Claims 1-8, Comprising: The contact bonding layer containing a radiation hardening component.   A semiconductor device manufactured by the manufacturing method according to claim 1. It is a semiconductor device manufactured by the manufacturing method as described in any one of Claims 1-8, Comprising: The semiconductor chip containing a contact bonding layer hardening body, and the support which supports the said semiconductor chip via the said contact bonding layer hardening body Comprising a base material and a cured sealing resin covering at least a part of the semiconductor chip;
A semiconductor device, wherein a sealing resin intrusion suppressing portion is formed at an end of the adhesive layer cured body.

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