JP2010001453A - Adhesive film, adhesive sheet, semiconductor device and method of producing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide adhesive films and adhesive sheets, capable of adhering to elements such as semiconductor wafers at a low temperature and easily removable from elements such as dicing sheets, to provide semiconductor devices using the adhesive film or sheet, and to provide a method of producing the semiconductor devices. <P>SOLUTION: An adhesive film 1 includes a high tack surface A and a low tack surface B. The high tack surface A comprises a first thermoplastic resin and the low tack surface B comprises a second thermoplastic resin. The glass transition temperature of the first thermoplastic resin is ≥0°C and <40°C and the glass transition temperature of the second thermoplastic resin is ≥40°C and <80°C. The adhesive film 1 is formed by coating on a substrate a first varnish comprising the first thermoplastic resin and a second varnish comprising the second thermoplastic resin, one on top of the other, and drying to form the film on the substrate. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to an adhesive film, an adhesive sheet, a semiconductor device, and a method for manufacturing the semiconductor device.

  Conventionally, silver paste has been mainly used as a die bonding material for bonding the semiconductor chip and the support member when the semiconductor chip is mounted on the support member. However, with the downsizing and high performance of semiconductor chips and the downsizing and densification of supporting members used, the method using silver paste is wire bonding caused by protrusion of silver paste or inclination of the semiconductor chip. Problems such as the occurrence of malfunctions are becoming apparent. Therefore, in recent years, adhesive films (adhesive films for semiconductors) have been used instead of silver paste.

  As a method of obtaining a semiconductor device using an adhesive film, there are an individual attachment method and a wafer back surface attachment method.

  In the piece pasting method, a piece is cut out from a reel-like adhesive film by cutting or punching, and the piece of the adhesive film is bonded to a support member. Through the adhesive film bonded to the support member, the semiconductor chips separated by a separate dicing process are bonded to the support member. Thereafter, a semiconductor device is obtained through a wire bonding process, a sealing process, and the like as necessary. However, in the case of the individual piece pasting method, a dedicated assembly device for cutting the adhesive film into individual pieces and bonding them to the support member is necessary, so that the manufacturing cost is higher than the method using silver paste. There was a problem.

  In the wafer back surface attaching method, first, an adhesive film and a dicing tape are attached to the back surface of the semiconductor wafer in this order. Then, the semiconductor wafer is diced and divided into a plurality of semiconductor chips, and the adhesive film is cut for each semiconductor chip. Then, a semiconductor chip is picked up with the adhesive film laminated | stacked on the back surface, and a semiconductor chip is joined to a supporting member through an adhesive film. Then, a semiconductor device is obtained through processes such as heating, curing, and wire bonding. In the case of the wafer back surface pasting method, an assembly device for separating the adhesive film is not required, and the conventional silver paste assembly device is improved as it is or a part of the device such as a hot plate is added. Can be used. Therefore, in the method using an adhesive film, it attracts attention as a method in which the manufacturing cost can be kept relatively low.

In particular, in recent years, a wafer back surface attaching method is mainly used for the purpose of simplifying the manufacturing process of a semiconductor device (see, for example, Patent Document 1).
JP 2005-11839 A

  In recent years, semiconductor wafers have been made thinner in order to achieve miniaturization and thinning of semiconductor devices. Therefore, an adhesive film that can be laminated on the back surface of the semiconductor wafer at a low temperature and can be easily peeled off from the dicing tape during the pickup process is strongly desired. However, with an adhesive film made from one kind of varnish so far, the temperature of laminating on the back surface of the semiconductor wafer cannot be made sufficiently low. Moreover, even if it can laminate at low temperature, it is not easy to peel the adhesive film from the dicing tape due to the tackiness of the adhesive film near room temperature.

  The present invention has been made in view of the above circumstances, and can be attached to a member such as a semiconductor wafer at a low temperature, and can be easily peeled off from a member such as a dicing sheet, for example. It is an object to provide a sheet, a semiconductor device using the sheet, and a method for manufacturing the semiconductor device.

  In order to solve the above-described problems, an adhesive film of the present invention is an adhesive film having one surface and the other surface, the one surface including a first thermoplastic resin, and the other surface being a first surface. 2 thermoplastic resin, the glass transition temperature of the first thermoplastic resin is 0 ° C. or more and less than 40 ° C., the glass transition temperature of the second thermoplastic resin is 40 ° C. or more and less than 80 ° C., and the first The first varnish containing the thermoplastic resin and the second varnish containing the second thermoplastic resin are applied on the base material, and then dried to form the base material.

  According to the adhesive film of the present invention, one surface (high tack surface) of the adhesive film can be attached to a member such as a semiconductor wafer at a low temperature. Moreover, if the other surface (low tack surface) of an adhesive film is affixed on members, such as a dicing sheet, an adhesive film can be easily peeled from a dicing sheet. As a result, for example, after the semiconductor wafer is diced, the obtained semiconductor chip can be easily picked up from the dicing sheet.

  Further, the first layer mainly including the first thermoplastic resin and the second layer mainly including the second thermoplastic resin are integrated. Therefore, since the interface between the first layer and the second layer can be eliminated, it becomes difficult to separate the first layer and the second layer. Furthermore, since the first varnish and the second varnish are dried at the same time, the manufacturing cost of the adhesive film can be greatly reduced, and further thinning of the adhesive film can be realized.

  The second varnish may be applied over the first varnish, or the first varnish may be applied over the second varnish.

  The adhesive film preferably contains a thermosetting resin and an inorganic filler. In an adhesive film containing a thermosetting resin, the shear adhesive strength at high temperatures is increased. Moreover, in the adhesive film containing an inorganic filler, improvement in breaking strength, reduction in tensile breaking elongation, improvement in handleability, improvement in thermal conductivity, adjustment of melt viscosity, and provision of thixotropic properties can be realized.

  The adhesive sheet of the present invention includes a dicing sheet and the adhesive film of the present invention laminated on the dicing sheet.

  Since the adhesive sheet of the present invention includes the adhesive film, one surface (high tack surface) of the adhesive film can be attached to a member such as a semiconductor wafer at a low temperature. Moreover, the other surface (low tack surface) of the adhesive film can be easily peeled from the dicing sheet.

  The semiconductor device of the present invention comprises a semiconductor element, an adherend connected to the semiconductor element, and a cured product of the adhesive film of the present invention, and is disposed between the semiconductor element and the adherend. A connection layer connecting the semiconductor element and the adherend.

  The manufacturing method of the semiconductor device of this invention includes the process of bonding the said one surface of the adhesive film of this invention to a semiconductor wafer, and the process of cut | disconnecting the said semiconductor wafer.

  According to the method for manufacturing a semiconductor device of the present invention, one surface (high tack surface) of an adhesive film can be attached to a semiconductor wafer at a low temperature. Further, after cutting the semiconductor wafer, the other surface (low tack surface) of the adhesive film can be easily peeled off from a member such as a dicing sheet.

  According to the present invention, for example, an adhesive film and an adhesive sheet that can be attached to a member such as a semiconductor wafer at a low temperature and can be easily peeled off from a member such as a dicing sheet, and a semiconductor device using them. A method for manufacturing a semiconductor device is provided.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the description of the drawings, the same reference numerals are used for the same or equivalent elements, and duplicate descriptions are omitted.
<Adhesive film>

  FIG. 1 is a cross-sectional view schematically showing an adhesive film according to an embodiment. The adhesive film 1 shown in FIG. 1 is preferably in the form of a belt having a width of about 1 to 20 mm or a width of about 10 to 50 cm, and is conveyed in a form wound on a winding core. The adhesive film 1 is a die bonding film that bonds a semiconductor element and an adherend. Examples of the adherend include a support member and a semiconductor element.

  The adhesive film 1 has a high tack surface A (one surface) and a low tack surface B (the other surface). The high tack surface A includes a first adhesive resin composition, and the low tack surface B includes a second adhesive resin composition different from the first adhesive resin composition. That is, the adhesive film 1 contains two types of adhesive resin compositions. The first adhesive resin composition includes a first thermoplastic resin, and the second adhesive resin composition includes a second thermoplastic resin.

  The glass transition temperature (Tg1) of the first thermoplastic resin is 0 ° C. or higher and lower than 40 ° C. From the viewpoint of the laminating property of the adhesive film 1, Tg1 is more preferably 35 ° C. or less, and further preferably 30 ° C. or less. On the other hand, from the viewpoint of handleability of the adhesive film 1 at room temperature, Tg1 is more preferably 5 ° C. or higher.

  The glass transition temperature (Tg2) of the second thermoplastic resin is 40 ° C. or higher and lower than 80 ° C. From the viewpoint of easy peeling from the dicing tape in the pickup process, Tg2 is more preferably 45 ° C. or higher, and further preferably 50 ° C. or higher. If Tg2 is too low, the tackiness of the adhesive film 1 is improved, so that it is easy to adhere. On the other hand, from the viewpoint of the die bond temperature after the pick-up process, Tg2 is preferably 75 ° C. or lower, and more preferably 70 ° C. or lower. If the die bonding temperature is too high, chip warpage during die bonding tends to occur.

  The adhesive film 1 is formed on the base material by applying the first varnish containing the first thermoplastic resin and the second varnish containing the second thermoplastic resin on the base material, and then drying. The

  According to the adhesive film 1 of the present embodiment, the high tack surface A of the adhesive film 1 can be attached to a member such as a semiconductor wafer at a low temperature. Moreover, if the low tack surface B of the adhesive film 1 is attached to a member such as a dicing sheet, the adhesive film 1 can be easily peeled from the dicing sheet. As a result, for example, after the semiconductor wafer is diced, the obtained semiconductor element can be easily picked up from the dicing sheet. Furthermore, the adhesive film 1 has heat resistance and moisture resistance including reflow resistance.

  The adhesive film 1 can be attached to a semiconductor wafer at 60 ° C. or less, for example. Here, when the adhesive film 1 held at a predetermined temperature is affixed to the semiconductor wafer while applying pressure as necessary, the adhesive film 1 is fixed to such an extent that the adhesive film 1 does not naturally peel off from the semiconductor wafer. It is determined that it can be pasted. More specifically, for example, the peel strength at the interface between the adhesive film 1 and the semiconductor wafer may be 20 N / m or more. The adhesive film 1 is attached to a semiconductor wafer using a hot roll laminator set at a temperature of 60 ° C. or less, for example. The peel strength is measured in a 25 ° C. atmosphere at a pulling angle of 90 ° and a pulling speed of 50 mm / min. For example, by reducing the filler content or lowering the Tg1 of the thermoplastic resin contained in the high tack surface A of the adhesive film 1, the adhesive film 1 that can be attached to a semiconductor wafer at 60 ° C. or lower is obtained. . The temperature at which the adhesive film 1 can be attached to the semiconductor wafer is more preferably 50 ° C. or lower, and still more preferably 40 ° C. or lower.

  As the thermoplastic resin, for example, phenoxy resin, acrylic resin, polyimide resin, polyurethane imide resin, polyamide imide resin, polyurethane resin and the like are preferable.

  Each of the two types of varnishes used for the adhesive film 1 may use the same or different thermosetting resin (thermosetting component) and inorganic filler as materials in addition to the thermoplastic resin.

  In addition to the thermoplastic resin, the adhesive film 1 may contain a thermosetting component and / or an inorganic filler. The thermosetting component is a component that can be cured by forming a three-dimensional network structure by heating. For example, the thermosetting component is composed of a thermosetting resin and its curing agent and / or curing accelerator. By using a thermosetting component, the shear adhesive strength at high temperatures tends to increase. However, when a thermosetting component is used, the peel adhesive strength at a high temperature tends to decrease. Therefore, whether or not the thermosetting component is used may be appropriately selected according to the purpose of use.

  The amount of the thermosetting resin is preferably 1 to 100 parts by mass, more preferably 1 to 50 parts by mass with respect to 100 parts by mass of the thermoplastic resin. If it exceeds 100 parts by mass, the film formability tends to decrease.

  The thermosetting resin is preferably selected from an epoxy resin and an imide compound having two thermosetting imide groups.

  The epoxy resin used as the thermosetting resin is a compound having two or more epoxy groups. From the viewpoint of curability and cured product characteristics, phenol glycidyl ether type epoxy resins are preferred. Examples of phenolic glycidyl ether type epoxy resins include bisphenol A, bisphenol AD, bisphenol S, bisphenol F or a condensed product of halogenated bisphenol A and epichlorohydrin, glycidyl ether of phenol novolac resin, glycidyl ether of cresol novolac resin, and bisphenol A. Examples thereof include glycidyl ethers of novolak resins. It is preferable to use an epoxy resin having an epoxy equivalent of 100 to 500.

  When an epoxy resin is used as the thermosetting resin, a phenol resin is suitably used as the curing agent. The OH equivalent of the phenol resin is preferably 50 to 600. The phenol resin is generally a compound having two or more phenolic hydroxyl groups. Specific examples of the phenol resin include phenol novolak resin, cresol novolak resin, bisphenol A novolak resin, poly-p-vinylphenol, and phenol aralkyl resin. When using a phenol resin, the amount is preferably 1 to 300 parts by mass, more preferably 1 to 150 parts by mass, and still more preferably 1 to 120 parts by mass with respect to 100 parts by mass of the epoxy resin. If it exceeds 300 parts by mass, the curability tends to decrease.

  As the curing agent or curing accelerator combined with the epoxy resin, in addition to the phenol resin, for example, imidazoles, dicyandiamide derivatives, dicarboxylic acid dihydrazide, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-ethyl-4- Methylimidazole-tetraphenylborate and 1,8-diazabicyclo [5.4.0] undecene-7-tetraphenylborate are used. Two or more of these may be used in combination. The amount of the curing accelerator is preferably 0 to 50 parts by mass, more preferably 0.1 to 50 parts by mass, and still more preferably 0.1 to 20 parts by mass with respect to 100 parts by mass of the epoxy resin. When the amount of the curing accelerator exceeds 50 parts by mass, the storage stability tends to decrease.

  When using combining an epoxy resin, a phenol resin, and a hardening accelerator, the composition of the adhesive film 1 is 1-100 mass parts of epoxy resins with respect to 100 mass parts of polyimide resins, for example, and phenol resin is 100 mass parts of epoxy resins. On the other hand, 1 to 600 parts by mass and the curing accelerator is 0 to 50 parts by mass with respect to 100 parts by mass of the epoxy resin.

  Examples of imide compounds used as thermosetting resins include orthobismaleimidebenzene, metabismaleimidebenzene, parabismaleimidebenzene, 1,4-bis (p-maleimidocumyl) benzene, 1,4-bis (m -Maleimidocumyl) benzene and imide compounds represented by the following formula (IV), (V) or (VI).

In the formula (IV), X ¹ represents —O—, —CH ₂ —, —CF ₂ —, —SO ₂ —, —S—, —CO—, —C (CH ₃ ) ₂ — or —C (CF ₃ ) _2- , R ¹¹ , R ¹² , R ¹³ and R ¹⁴ each independently represent a hydrogen atom, a lower alkyl group, a lower alkoxy group, fluorine, chlorine or bromine, and Z ¹ represents an ethylenically unsaturated double bond The dicarboxylic acid residue which has is shown.

In the formula (V), X ² represents —O—, —CH ₂ —, —CF ₂ —, —SO ₂ —, —S—, —CO—, —C (CH ₃ ) ₂ — or —C (CF ₃ ) _2- , R ¹⁵ , R ¹⁶ , R ¹⁷ and R ¹⁸ each independently represent a hydrogen atom, a lower alkyl group, a lower alkoxy group, fluorine, chlorine or bromine; Z ² is an ethylenically unsaturated double bond The dicarboxylic acid residue which has is shown.

In the formula (VI), r represents an integer of 0 to 4, and Z ₃ represents a dicarboxylic acid residue having an ethylenically unsaturated double bond.

  Examples of the imide compound of the formula (IV) include 4,4′-bismaleimide diphenyl ether, 4,4′-bismaleimide diphenylmethane, 4,4′-bismaleimide-3,3′-dimethyl-diphenylmethane, and 4,4. '-Bismaleimide diphenyl sulfone, 4,4'-bismaleimide diphenyl sulfide, 4,4'-bismaleimide diphenyl ketone, 2,2-bis (4-maleimidophenyl) propane, 4,4'-bismaleimide diphenylfluoromethane And 1,1,1,3,3,3-hexafluoro-2,2-bis (4-maleimidophenyl) propane.

  Examples of the imide compound of the formula (V) include bis [4- (4-maleimidophenoxy) phenyl] ether, bis [4- (4-maleimidophenoxy) phenyl] methane, and bis [4- (4-maleimidophenoxy). Phenyl] fluoromethane, bis [4- (4-maleimidophenoxy) phenyl] sulfone, bis [4- (3-maleimidophenoxy) phenyl] sulfone, bis [4- (4-maleimidophenoxy) phenyl] sulfide, bis [4 -(4-maleimidophenoxy) phenyl] ketone, 2,2-bis [4- (4-maleimidophenoxy) phenyl] propane, and 1,1,1,3,3,3-hexafluoro-2,2-bis There is [4- (4-maleimidophenoxy) phenyl] propane.

  In order to accelerate the curing of these imide compounds, a radical polymerization initiator may be used. Examples of radical polymerization initiators include acetylcyclohexylsulfonyl peroxide, isobutyryl peroxide, benzoyl peroxide, octanoyl peroxide, acetyl peroxide, dicumyl peroxide, cumene hydroperoxide, and azobisisobutyronitrile. is there. As for the usage-amount of a radical polymerization initiator, about 0.01-1.0 mass part is preferable with respect to 100 mass parts of imide compounds.

  The inorganic filler is used for the purpose of improving the breaking strength and reducing the tensile elongation at break of the adhesive film 1 in the B-stage state, improving the handleability, improving the thermal conductivity, adjusting the melt viscosity, and imparting thixotropic properties. It is done. As the filler, for example, a conductive filler selected from silver powder, gold powder and copper powder, and a nonmetallic inorganic filler containing an inorganic substance are used.

  Examples of the inorganic substance constituting the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, alumina, aluminum nitride, aluminum borate whisker, and nitride. Examples include boron, crystalline silica, amorphous silica, and antimony oxide. In order to improve thermal conductivity, alumina, aluminum nitride, boron nitride, crystalline silica, and amorphous silica are preferable. For the purpose of adjusting melt viscosity and imparting thixotropic properties, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, alumina, crystalline silica, and Amorphous silica is preferred. In order to improve moisture resistance, alumina, silica, aluminum hydroxide, and antimony oxide are preferable. Multiple types of fillers may be used in combination.

  By increasing the filler content, the breaking strength of the adhesive film 1 can be increased, the elastic modulus can be increased, and the toughness can be increased. However, if the filler content is too large, the adhesiveness of the adhesive film 1 is lowered and the reflow crack resistance tends to be lowered. In particular, the adhesive layer easily breaks when used for bonding an adherend having an uneven surface such as an organic substrate and a semiconductor chip. Moreover, when the filler increases, the temperature at which the adhesive film 1 can be attached to the semiconductor wafer tends to increase. From such a viewpoint, the content of the filler is preferably less than 80% by mass, more preferably less than 60% by mass, and less than 40% by mass with respect to the total mass of the adhesive film 1. More preferably, it is particularly preferably less than 30% by mass. 1 mass part or more is preferable with respect to 100 mass parts of polyimide resins, and, as for content of a filler, 3 mass parts or more is more preferable.

  The adhesive film 1 preferably has heat resistance and moisture resistance required when a semiconductor chip is mounted on a support member for mounting a semiconductor chip. Therefore, it is preferable that the reflow crack resistance test is passed. The reflow crack resistance of the adhesive film 1 can be evaluated using the adhesive strength as an index. In order to obtain good reflow crack resistance, when the adhesive film 1 is bonded to a semiconductor wafer with an adhesive area of 4 × 2 mm square, the peel strength is initially 1.0 kg / cm or more and 85 ° C./85%. It is preferably 0.5 kg / cm or more after being left for 48 hours in an atmosphere. The initial peel strength is more preferably 1.3 kg or more, and further preferably 1.5 kg / cm or more. The peel strength after leaving for 48 hours in an atmosphere of 85 ° C./85% is more preferably 0.7 kg / cm or more, and further preferably 0.8 kg / cm or more.

  The adhesive film 1 is used as an adhesive film for die bonding for bonding a semiconductor element such as an IC or LSI and an adherend, for example. As the adherend, 42 alloy lead frame, lead frame such as copper lead frame, plastic film such as polyimide and epoxy resin, glass nonwoven fabric impregnated and cured with plastic such as polyimide and epoxy resin, alumina And a semiconductor mounting support member made of ceramics. The adhesive film 1 is suitably used as an adhesive film for die bonding for bonding an organic substrate having an uneven surface and a semiconductor element. Examples of the organic substrate having irregularities on the surface include an organic substrate having an organic resist layer on the surface, an organic substrate having wiring on the surface, and the like.

  The adhesive film 1 is also suitably used as an adhesive film for bonding a semiconductor element and a semiconductor element in a Stacked-PKG having a structure in which a plurality of semiconductor elements are stacked.

  FIG. 2 is a process cross-sectional view schematically showing the method for manufacturing an adhesive film according to this embodiment. First, as shown in FIG. 2A, a second varnish containing a second adhesive resin composition and an organic solvent is applied onto a base material 2 made of PET or the like. Thereby, the 2nd varnish layer 1b is formed on the base material 2. FIG. Subsequently, as shown in FIG. 2B, the first varnish containing the first adhesive resin composition and the organic solvent is applied so as to overlap the second varnish. Thereby, the 1st varnish layer 1a is formed on the 2nd varnish layer 1b. The 2nd varnish layer 1b and the 1st varnish layer 1a are coating films.

  The first varnish and the second varnish are prepared by mixing and kneading the first adhesive resin composition and the second adhesive resin composition in an organic solvent. Mixing and kneading can be carried out by appropriately combining dispersers such as a normal stirrer, a raking machine, a three-roller, and a ball mill.

  The organic solvent is not limited as long as it can uniformly dissolve, knead or disperse the material. For example, dimethylformamide, dimethylacetamide, N-methyl-2-pyrrolidone, dimethyl sulfoxide, diethylene glycol dimethyl ether, toluene, benzene, xylene, Examples thereof include methyl ethyl ketone, methyl isobutyl ketone, tetrahydrofuran, ethyl cellosolve, ethyl cellosolve acetate, butyl cellosolve, dioxane, cyclohexanone, and ethyl acetate. These can be used alone or in combination of two or more.

  The base material 2 is not particularly limited as long as it can withstand heat drying described later. For example, polyester film, polypropylene film, polyethylene terephthalate film, polyimide film, polyetherimide film, polyether naphthalate film, methylpentene. A film etc. are mentioned. Two or more of these films may be combined to form a multilayer film, or the substrate 2 having a surface treated with a release agent such as silicone or silica may be used. The substrate 2 may be used as it is as a support for the adhesive film 1.

  Although there is no restriction | limiting in particular in the thickness of the 2nd varnish layer 1b and the 1st varnish layer 1a, the thickness of the 1st varnish layer 1a for forming the high tack surface A is the 2nd varnish for forming the low tack surface B It is preferable to be thinner than the thickness of the layer 1b. For example, when obtaining the adhesive film 1 having a total thickness of 20 μm, the first varnish layer 1a is dried so that the thickness after drying is about 1 to 8 μm, and the second varnish layer 1b is dried after about 12 to 19 μm. It is preferable to adjust the coating amount of the first varnish and the second varnish. As the thickness of the first varnish layer 1a for forming the high tack surface A increases, the tack strength of burrs generated during dicing increases. As a result, adjacent semiconductor chips are fused together, and a pickup error tends to occur.

  Subsequently, by drying the second varnish layer 1b and the first varnish layer 1a, the adhesive film 1 is formed on the substrate 2 as shown in FIG. The conditions for the heat drying are not particularly limited as long as the solvent used is sufficiently volatilized, but it is usually carried out by heating at 50 to 200 ° C. for 0.1 to 90 minutes. Thereafter, the substrate 2 is peeled and removed.

  As a result, the first layer mainly including the first adhesive resin composition and the second layer mainly including the second adhesive resin composition are integrated. Therefore, since the interface between the first layer and the second layer can be eliminated, it becomes difficult to separate the first layer and the second layer. Furthermore, since the first varnish and the second varnish are dried at the same time, the manufacturing cost of the adhesive film 1 can be greatly reduced as compared with the case where the individually produced adhesive films are bonded together, and the adhesive film 1 is further improved. Thin film can be realized.

  In addition, after forming the 1st varnish layer 1a on the base material 2, you may form the 2nd varnish layer 1b on the 1st varnish layer 1a.

  FIG. 3 is a cross-sectional view schematically showing a laminate including the adhesive film according to the present embodiment. In the laminate shown in FIG. 3, the adhesive films 1 are provided on both surfaces of the base material 2. The high tack surface A of the adhesive film 1 is attached to one surface of the substrate 2. The low tack surface B of the adhesive film 1 is attached to the other surface of the substrate 2. Note that the adhesive film 1 may be provided only on one side of the substrate 2.

FIG. 4 is a cross-sectional view schematically showing a laminate including the adhesive film according to this embodiment. The laminate shown in FIG. 4 includes a base material 2, an adhesive film 1 provided on the base material 2, and a cover film 3 that covers the high tack surface A of the adhesive film 1. The cover film 3 can prevent the adhesive film 1 from being damaged or contaminated.
<Adhesive sheet>

  FIG. 5 is a cross-sectional view schematically showing the adhesive sheet according to the embodiment. An adhesive sheet 10 shown in FIG. 5 includes a dicing sheet 6 and an adhesive film 1 laminated on the dicing sheet 6. The dicing sheet 6 has a base film 4 and a pressure-sensitive adhesive layer 5 provided on the base film 4. The low tack surface B of the adhesive film 1 is bonded to the pressure-sensitive adhesive layer 5. The adhesive sheet 10 is formed by integrating a dicing sheet and a die bonding film, and has characteristics required for both. A cover film may be stuck on the adhesive film 1.

  Since the adhesive sheet 10 of this embodiment includes the adhesive film 1, the high tack surface A of the adhesive film 1 can be attached to a member such as a semiconductor wafer at a low temperature. Further, since the pressure-sensitive adhesive layer 5 is attached to the low tack surface B of the adhesive film 1, the low tack surface B of the adhesive film 1 can be easily peeled from the dicing sheet 6.

  The dicing sheet 6 may not include the pressure-sensitive adhesive layer 5. In this case, it is preferable to process the planar shape of the adhesive film 1 in advance to a shape close to a semiconductor wafer (pre-cut).

  The pressure-sensitive adhesive layer 5 may be either a pressure-sensitive type or a radiation-curing type, has a sufficient adhesive force that prevents the semiconductor element from scattering during dicing, and has a low adhesion level that does not damage the semiconductor element in the subsequent semiconductor element pickup process. Conventionally known ones can be used without particular limitation as long as they have power.

It is preferable that the base film 4 can ensure elongation (common name, expanded) when a tensile tension is applied, and examples thereof include a film made of polyolefin.
<Semiconductor device>

6 to 11 are process cross-sectional views schematically showing the method for manufacturing a semiconductor device according to the embodiment. The semiconductor device 20 shown in FIG. 11 is manufactured through the steps shown in FIGS.
(Lamination process)

  First, as shown in FIG. 6, the high tack surface A of the adhesive film 1 included in the adhesive sheet 10 is bonded to the semiconductor wafer W. The semiconductor wafer W has a front surface WA on which a circuit is formed and a back surface WB located on the opposite side of the front surface WA. The high tack surface A is bonded to the back surface WB of the semiconductor wafer W. The temperature at the time of bonding is preferably 100 ° C. or lower. For example, when a cover film is affixed on the adhesive film 1 of the adhesive sheet 10, the adhesive film 1 is bonded to the semiconductor wafer W after peeling the cover film.

  Note that the adhesive film 1 may be used instead of the adhesive sheet 10. For example, when the adhesive film 1 is formed on the substrate 2, the substrate 2 is peeled after the high tack surface A of the adhesive film 1 is bonded to the semiconductor wafer W. Subsequently, the low tack surface B of the adhesive film 1 and the pressure-sensitive adhesive layer 5 of the dicing sheet 6 are bonded together.

As the semiconductor wafer W, a wafer made of a compound semiconductor such as polycrystalline silicon, various ceramics, and gallium arsenide is used in addition to single crystal silicon. The dicing sheet 6 is not particularly limited as long as the dicing sheet 6 has an adhesive property that can be fixed to a fixing ring and can be stretched so that the adhesive film 1 is divided. For example, a vinyl chloride tape can be used as the dicing tape 6.
(Dicing process)

  Next, as shown in FIG. 7, the semiconductor wafer W is cut using a cutting device such as a dicing blade BL. For example, the semiconductor wafer W is diced. Here, a cut may be made in the adhesive film 1 in the thickness direction of the adhesive film 1 or the adhesive film 1 may be completely cut. The method of completely cutting the adhesive film 1 is called full cut. On the other hand, the construction method that does not completely cut the adhesive film and leaves a part is called half-cut. The depth of the cut preferably corresponds to the thickness of the first varnish layer 1a shown in FIG. By cutting the semiconductor wafer W, a plurality of semiconductor elements C are obtained. Examples of the semiconductor element C include a semiconductor chip. When cutting into the adhesive film 1, the dicing sheet 6 can be expanded (expanded) during the pickup process of the next process, and can be divided starting from the cut section by pushing up with a jig such as a push-up needle during the pickup process.

  The depth of cut when half-cutting is preferably 1/10 to 9/10 of the thickness of the adhesive film 1, more preferably 1/5 to 4/5, and still more preferably 1/3 to 2/3. When the adhesive film 1 is cut, burrs generated during cutting can be reduced by making the cut of the adhesive film 1 shallow. As a result, the manufacturing yield of the semiconductor device is improved. In this case, the uncut portion of the adhesive film 1 is divided by increasing the amount of expansion in order to divide the adhesive film 1 during expansion or by increasing the push-up height during pickup. The die bonding film can be divided even if the expanded amount is reduced by deepening the cut of the adhesive film 1 or the push-up height at the time of pickup is low.

As a cutting device, a commercially available dicer or blade can be used. For example, a full automatic dicing saw 6000 series or a semi-automatic dicing saw 3000 series manufactured by DISCO Corporation can be used as the dicer. As the blade, a dicing blade NBC-ZH05 series, NBC-ZH series, etc. manufactured by DISCO Corporation can be used. Further, the semiconductor wafer W may be cut using a laser such as a full automatic laser saw 7000 series manufactured by DISCO Corporation.
(Pickup process)

  Next, as shown in FIG. 8, the semiconductor element C is picked up from the dicing sheet 6. Thereby, the adhesive film 1 is cut | disconnected from a notch and the contact bonding layer 7 adhering to the semiconductor element C is obtained. Thus, the semiconductor element 8 with the adhesive layer having the semiconductor element C and the adhesive layer 7 is obtained.

  The adhesive film 1 half-cut with a dicer can be divided by using a pickup die bonder generally marketed. For example, division is possible by using flexible die bonders DB-730 and DB-700 manufactured by Renesas East Japan Semiconductor, and die bonders SPA-300 and SPA-400 manufactured by Shinkawa.

  The half-cut adhesive film 1 can be divided by expanding the dicing sheet 6 in a laminate composed of the semiconductor wafer W attached to the wafer ring, the adhesive film 1, and the dicing sheet 6. The expansion is performed by inserting an expansion ring from the upper or lower surface of the wafer ring. The expanding amount of the dicing sheet 6 is determined by the difference in height between the wafer ring and the expanding ring. The difference in height between the wafer ring and the expanding ring is called the expanding amount, and the inserting speed of the expanding ring is called the expanding speed.

  The expanded amount when the half-cut adhesive film 1 is divided by the expand is desirably 1 to 30 mm, more preferably 2 to 20 mm, and further preferably 3 to 10 mm. When the expanded amount exceeds 30 mm, the dicing sheet 6 is extremely stretched during expansion and tends to be easily torn. Moreover, if the amount of expand is less than 1 mm, the stress applied to the half-cut portion of the adhesive film 1 during expansion is small, and the adhesive film 1 tends to be difficult to divide.

  The expanding speed when the half-cut adhesive film 1 is divided by expanding is preferably 1 to 50 mm / s, more preferably 3 to 30 mm / s, and still more preferably 5 to 15 mm / s.

The sample temperature when dividing the half-cut adhesive film 1 with the expand is preferably −10 to 30 ° C., more preferably 0 to 30 ° C. However, in order to set the temperature below room temperature, a dedicated expander in which a cooling mechanism is added to a pickup die bonder that is normally marketed is required.
(Die bonding process)

  Next, as shown in FIG. 9, the semiconductor element 8 with the adhesive layer is die-bonded to the support member 9. At this time, the adhesive layer 7 of the semiconductor element 8 with the adhesive layer is attached to the support member 9 by heat and pressure. The heating temperature is usually 20 to 250 ° C. The load is usually 0.01 to 20 kgf. Heating is usually performed at 60 to 300 ° C. for 0.1 to 300 seconds.

When the adhesive film 1 contains a thermosetting resin, it is preferable to heat the bonded semiconductor chip to promote adhesion and curing of the adhesive film 1 to the adherend, thereby increasing the strength of the joint. What is necessary is just to adjust the heating at this time suitably according to the composition of the adhesive film 1, and is 60-220 degreeC and 0.1 to 600 minutes normally. When performing resin sealing, you may utilize the heating of the hardening process of sealing resin.
(Wire bonding process)

Next, as shown in FIG. 10, a wire 11 that electrically connects the connection terminal of the semiconductor element C and the connection terminal of the support member 9 is formed.
(Sealing process)

  Next, as illustrated in FIG. 11, a sealing material 12 that seals the semiconductor element C is formed on the support member 9. Note that the sealing step may not be performed.

  The adhesive layer 7 is cured by heating through the wire bonding process and the sealing process. As a result, the adhesive layer 7 becomes a connection layer 7 a that connects the semiconductor element C and the support member 9. In this way, the semiconductor device 20 shown in FIG. 11 is manufactured. The semiconductor device 20 includes a semiconductor element C, a support member 9 (adhered body) connected to the semiconductor element C, and a cured product of the adhesive film 1, and is disposed between the semiconductor element C and the support member 9. And a connection layer 7a. The semiconductor device 20 is a semiconductor package, for example.

  According to this method for manufacturing a semiconductor device, the high tack surface A of the adhesive film 1 can be attached to the semiconductor wafer W at a low temperature. Further, after cutting the semiconductor wafer W, the low tack surface B of the adhesive film 1 can be easily peeled off from the dicing sheet 6. Furthermore, when the adhesive film 1 is used for the ultrathin semiconductor wafer W having a thickness of 100 μm or less, the manufacturing yield of the semiconductor element C can be improved.

  FIG. 12 is a cross-sectional view schematically showing a semiconductor device according to another embodiment. The semiconductor device 20A shown in FIG. 12 further includes a semiconductor element C, a connection layer 7a, wires 11, and bumps 13 in addition to the configuration of the semiconductor device 20. A further semiconductor element C is provided on the semiconductor element C via a further connection layer 7a. The further wire 11 electrically connects the connection terminal of the further semiconductor element C and the connection terminal of the support member 9. The bumps 13 are formed on the back surface of the support member 9. In the semiconductor device 20, a plurality of semiconductor elements C are overlapped.

As mentioned above, although preferred embodiment of this invention was described in detail, this invention is not limited to the said embodiment. For example, you may use the adhesive film 1 for uses other than manufacture of a semiconductor device. Moreover, you may form the adhesive film 1 by making it dry, after apply | coating 3 or more types of adhesive resin compositions in piles. Moreover, the adhesive film 1 may contain an adhesive. Furthermore, an adhesive layer may be formed on the low tack surface B of the adhesive film 1. Alternatively, the adhesive film 1 may be attached to the surface WA of the semiconductor wafer W. In that case, a position to be cut from the back surface WB of the semiconductor wafer W can be recognized by using a dicer equipped with an IR camera.
(Example)

EXAMPLES Hereinafter, although this invention is demonstrated more concretely based on an Example and a comparative example, this invention is not limited to a following example.
(Varnish 1)

  In a 500 ml four-necked flask equipped with a thermometer, a stirrer and a calcium chloride tube, the diamine and N-methyl-2-pyrrolidone (NMP) shown in Varnish 1 of Table 1 were stirred and dissolved at 60 ° C.

After dissolution of the diamine, acid anhydrides shown in varnish 1 of Table 1 were added in small portions. After reacting at 60 ° C. for 1 hour, the mixture was heated at 170 ° C. while blowing N ₂ gas to remove water azeotropically with a part of the solvent. Water was removed to obtain a polyimide solution.

In the obtained polyimide solution, 4 parts by mass of a cresol novolac type epoxy resin (manufactured by Tohto Kasei) and 4,4 ′-[1- [4- [1- (4-hydroxyphenyl)] with respect to 100 parts by mass of polyimide. 2 parts by mass of -1-methylethyl] phenyl] ethylidene] bisphenol (Honshu Chemical) and 0.5 parts by mass of tetraphenylphosphonium tetraphenylborate (Tokyo Kasei) were added. Furthermore, boron nitride filler (made by Mizushima alloy iron) is added to 25% by mass with respect to the total mass of solids, and Aerosil filler R972 (made by Nippon Aerosil) is added to 3% by mass with respect to the total mass of solids. The varnish 1 was obtained by kneading.
(Varnish 2)

  A polyimide solution was obtained in the same manner as in the varnish 1 except that the raw materials for synthesizing the polyimide and the blending ratio thereof were changed to the respective compositions (parts by mass) shown in the varnish 2 of Table 1.

In the obtained polyimide solution, 4 parts by mass of a cresol novolac type epoxy resin (manufactured by Tohto Kasei) and 4,4 ′-[1- [4- [1- (4-hydroxyphenyl)] with respect to 100 parts by mass of polyimide. 2 parts by mass of -1-methylethyl] phenyl] ethylidene] bisphenol (Honshu Chemical) and 0.5 parts by mass of tetraphenylphosphonium tetraphenylborate (Tokyo Kasei) were added. Further, boron nitride filler (made by Mizushima alloy iron) is added to 12% by mass with respect to the total mass of the solid content, and Aerosil filler R972 (made by Nippon Aerosil) is added to 3% by mass with respect to the total mass of the solid content. The varnish 2 was obtained by kneading.
(Varnish 3)

  A polyimide solution was obtained in the same manner as in the varnish 1 except that the raw materials for synthesizing the polyimide and the mixing ratio thereof were changed to the respective compositions (parts by mass) shown in the varnish 3 of Table 1.

  In the obtained polyimide solution, 4 parts by mass of a cresol novolac type epoxy resin (manufactured by Tohto Kasei) and 4,4 ′-[1- [4- [1- (4-hydroxyphenyl)] with respect to 100 parts by mass of polyimide. 2 parts by mass of -1-methylethyl] phenyl] ethylidene] bisphenol (Honshu Chemical) and 0.5 parts by mass of tetraphenylphosphonium tetraphenylborate (Tokyo Kasei) were added. Further, a boron nitride filler (made of Mizushima alloy iron) was added so as to be 10% by mass with respect to the total mass of the solid content, and kneaded well to obtain varnish 3.

In Table 1, the abbreviations for raw materials indicate the following acid anhydrides or diamines. The unit of the blending ratio is part by mass.
(Acid anhydride)
ODPA: 4,4′-oxydiphthalic dianhydride (manac)
DBTA: 1,10- (decamemethylene) bis (trimellitate dianhydride) (manufactured by Kurokin Kasei)
BPADA: 2,2-bis [4- (3,4-dicarboxyphenoxy) phenyl] propane dianhydride (manufactured by Kurokin Kasei)
(Diamine)
LP7100: 1,3-bis (3-aminopropyl) tetramethyldisiloxane (manufactured by Shin-Etsu Chemical Co., Ltd.)
B12: 4,9-dioxadecane-1,12-diamine (manufactured by BASF)
D2000: Polyoxypropylenediamine 2000 (manufactured by BASF)
BAPP: 2,2bis- (4- (4-aminophenoxy) phenyl) propane (manufactured by Wakayama Seika Kogyo Co., Ltd.)
Example 1

The prepared varnish 1 was applied onto a 50 μm-thick polyethylene terephthalate film (Teijin DuPont Film A31) that had been subjected to a release treatment, and then varnish 2 was applied. Thereafter, the adhesive film of Example 1 having a total thickness of 25 μm was produced by heating at 80 ° C. for 30 minutes and then at 120 ° C. for 30 minutes. The coating amount of varnish 1 was adjusted so that the film thickness after drying was 8 μm, and the coating amount of varnish 2 was adjusted so that the film thickness after drying was 17 μm.
(Example 2)

The prepared varnish 1 was applied onto a 50 μm-thick polyethylene terephthalate film (Teijin DuPont Film A31) that had been subjected to a release treatment, and then varnish 3 was applied. Thereafter, the adhesive film of Example 2 having a total thickness of 25 μm was produced by heating at 80 ° C. for 30 minutes and subsequently at 120 ° C. for 30 minutes. In addition, the coating amount of the varnish 1 was adjusted so that the film thickness after drying might be 8 micrometers, and the coating amount of the varnish 3 was adjusted so that the film thickness after drying might be 17 micrometers.
(Comparative Example 1)

The prepared varnish 1 was applied onto a polyethylene terephthalate film (Teijin DuPont Film A31) having a thickness of 50 μm, which had been subjected to a release treatment, and heated at 80 ° C. for 30 minutes and then at 120 ° C. for 30 minutes. An adhesive film was prepared.
(Comparative Example 2)

The prepared varnish 2 was coated on a polyethylene terephthalate film (Teijin DuPont Film A31) having a thickness of 50 μm, and heated at 80 ° C. for 30 minutes, then at 120 ° C. for 30 minutes, and Comparative Example 2 having a thickness of 25 μm. An adhesive film was prepared.
(Comparative Example 3)

The prepared varnish 3 was coated on a polyethylene terephthalate film (Teijin DuPont Film A31) having a thickness of 50 μm, and heated at 80 ° C. for 30 minutes and then at 120 ° C. for 30 minutes, and Comparative Example 3 having a thickness of 25 μm. An adhesive film was prepared.
(Glass-transition temperature)

In Examples 1 and 2, a film made of each of the first thermoplastic resin and the second thermoplastic resin, in Comparative Examples 1 to 3, the adhesive films of Comparative Examples 1 to 3 were cured by heating at 180 ° C. for 1 hour, and about A 7 × 50 mm sample was cut out. For this sample, a temperature dependence curve of tan δ was obtained under the following conditions. And the glass transition temperature was calculated | required from the tan-delta peak value. In Examples 1 and 2, the first thermoplastic resin used for the surface to be affixed to the semiconductor wafer (high tack surface A) is the second used for the surface to be affixed to the thermoplastic resin A and the dicing sheet (low tack surface B). The thermoplastic resin was designated as thermoplastic resin B. The results are shown in Table 2.
Test device: TA instruments RSA-III
Test frequency: 1Hz
Temperature increase rate: 5 ° C / min
Measurement temperature: -50 to 300 ° C (within possible range)
Test piece shape: L approx. 15 mm (between initial chucks)
DeltaL limit: 15mm
Mode: Tensile (tack strength)

The tack strength of the adhesive films of Examples 1 and 2 and Comparative Examples 1 to 3 was determined using a tacking tester (Tacking Tester manufactured by Reska Co., Ltd.), pushing speed: 2 mm / sec, pulling speed: 10 mm / sec, stop load. The tack strength for 5.1 mmφ SUS304 was measured and determined under the conditions of: 100 gf / cm ² and stop time: 1 second. The tack strength of the high tack surface (surface attached to the semiconductor wafer) was FA, and the tack strength of the low tack surface (surface attached to the dicing sheet) was FB. The results are shown in Table 2.
(Laminate)

  The adhesive films of Examples 1 and 2 and Comparative Examples 1 to 3 were cut out to a diameter of 210 mm and room temperature (25 ° C.) using DM-300-H manufactured by JCM Corporation on T-80MW (80 μm) manufactured by Denki Kagaku Kogyo Co., Ltd. ). In addition, about the adhesive film of Example 1, the surface (low tack surface) formed from the varnish 2 and the dicing sheet were bonded together. Regarding the adhesive film of Example 2, the surface (low tack surface) formed from the varnish 3 was bonded to the dicing sheet. Moreover, about the adhesive film of Comparative Examples 1-3, the open surface at the time of coating (the reverse side of a polyethylene terephthalate film) was bonded together with the dicing sheet.

A laminated wafer composed of an adhesive film and a dicing sheet was laminated with a semiconductor wafer having a thickness of 200 μm at 60 ° C., and the laminating property was evaluated. The laminate used DM-300-H manufactured by JCM Co., Ltd., and the case where the bonding was possible was good, and the case where the adhesive film was not attached to the back surface of the semiconductor wafer was regarded as defective. The results are shown in Table 2.
(Pickup property)

  A laminated product composed of the adhesive film of Examples 1 and 2 and Comparative Examples 1 to 3 and a dicing sheet was laminated with a semiconductor wafer having a thickness of 50 μm at 60 ° C. or 80 ° C., and the laminated product composed of the semiconductor wafer, the adhesive film, and the dicing sheet. Obtained. The hot plate surface temperature during lamination was set to 60 ° C. in Examples 1 and 2 and Comparative Example 1, and to 80 ° C. in Comparative Examples 2 and 3.

  Using a full auto dicer DFD-6361 manufactured by DISCO Corporation, a laminated product composed of a semiconductor wafer, an adhesive film and a dicing sheet was cut. Cutting was performed by a single cut method in which processing was completed with one blade. A dicing blade NBC-ZH104F-SE 27HDBB manufactured by DISCO Corporation was used as a blade, and cutting was performed under conditions of a blade rotation speed of 45,000 rpm and a cutting speed of 50 mm / s. The blade height at the time of cutting was set to leave 10 μm of the adhesive film (90 μm). The size for cutting the semiconductor wafer was 10 × 10 mm. Thereafter, the adhesive film was completely cut by expanding.

  Subsequently, the pick-up property of the semiconductor chip obtained by dicing was evaluated using a flexible die bonder DB-730 manufactured by Renesas East Japan Semiconductor. Micromechanics RUBBER TIP 13-087E-33 (size: 10 × 10 mm) was used as the pick-up collet, and micromechanics EJECTOR NEEDLE SEN2-83-05 (diameter: 0.7 mm, tip) Shape: semicircle with a diameter of 350 μm) was used. Nine push-up pins were arranged with a pin center interval of 4.2 mm. The pick-up property was evaluated under the conditions of a pin push-up speed during pick-up: 10 mm / s and a push-up height: 1000 μm. 100 consecutive chips were picked up, and a case where chip cracks, pickup mistakes, etc. did not occur was good. The results are shown in Table 2.

  In Comparative Example 2, the laminate could not be laminated at 60 ° C., so that the pickup property was evaluated by laminating at 80 ° C. In Comparative Example 3, lamination could not be performed. In the adhesive films of Examples 1 and 2, both the wafer laminating property and the picking property at 60 ° C. were good.

It is sectional drawing which shows typically the adhesive film which concerns on embodiment. It is process sectional drawing which shows typically the manufacturing method of the adhesive film which concerns on this embodiment. It is sectional drawing which shows typically the laminated body containing the adhesive film which concerns on this embodiment. It is sectional drawing which shows typically the laminated body containing the adhesive film which concerns on this embodiment. It is sectional drawing which shows typically the adhesive sheet which concerns on embodiment. It is process sectional drawing which shows typically the manufacturing method of the semiconductor device which concerns on embodiment. It is process sectional drawing which shows typically the manufacturing method of the semiconductor device which concerns on embodiment. It is process sectional drawing which shows typically the manufacturing method of the semiconductor device which concerns on embodiment. It is process sectional drawing which shows typically the manufacturing method of the semiconductor device which concerns on embodiment. It is process sectional drawing which shows typically the manufacturing method of the semiconductor device which concerns on embodiment. It is process sectional drawing which shows typically the manufacturing method of the semiconductor device which concerns on embodiment. It is sectional drawing which shows typically the semiconductor device which concerns on another embodiment.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Adhesive film, 2 ... Base material, 4 ... Base material film, 5 ... Adhesive layer, 6 ... Dicing sheet, 7a ... Connection layer, 9 ... Support member (adhered body), 10 ... Adhesive sheet, 20, 20A ... Semiconductor device, A ... High tack surface (one surface), B ... Low tack surface (the other surface), C ... Semiconductor element, W ... Semiconductor wafer.

Claims (5)

An adhesive film having one side and the other side,
The one surface includes a first thermoplastic resin, and the other surface includes a second thermoplastic resin,
The glass transition temperature of the first thermoplastic resin is 0 ° C. or higher and lower than 40 ° C.,
The glass transition temperature of the second thermoplastic resin is 40 ° C. or higher and lower than 80 ° C.,
An adhesive film formed on the substrate by applying the first varnish containing the first thermoplastic resin and the second varnish containing the second thermoplastic resin on the substrate, and then drying. .   The adhesive film of Claim 1 containing a thermosetting resin and an inorganic filler.   An adhesive sheet comprising a dicing sheet and the adhesive film according to claim 1 or 2 laminated on the dicing sheet. A semiconductor element;
An adherend connected to the semiconductor element;
A connection layer comprising a cured product of the adhesive film according to claim 1, disposed between the semiconductor element and the adherend, and connecting the semiconductor element and the adherend;
A semiconductor device comprising: Bonding the one surface of the adhesive film according to claim 1 or 2 to a semiconductor wafer;
Cutting the semiconductor wafer;
A method for manufacturing a semiconductor device, comprising:

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