TWI545643B - Manufacturing method for semiconductor wafer processing tape and tape for semiconductor wafer processing - Google Patents

Description

Manufacturing method of semiconductor wafer processing tape and tape for semiconductor wafer processing

The present invention relates to a method of manufacturing a semiconductor wafer processing tape and a semiconductor wafer processing tape manufactured by the manufacturing method.

As a processing tape for a semiconductor wafer, there is a dicing-mud film which has a circular underlayer formed on a resin film for support so as to be substantially the same as or larger than a semiconductor wafer. The adhesive layer is formed by forming a circular adhesive tape (cutting ribbon).

As a general manufacturing method of such a multilayer tape, there is known a manufacturing method in which an adhesive is applied by a coater so as to cover the entire single surface of the resin film, and thereafter remains in a manner equivalent to the size of the semiconductor wafer. In some cases, the unnecessary portion is removed, and the adhesive tape is formed by the method, and the adhesive tape is cut into a shape equivalent to a ring frame (for example, Patent Document 1).

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2007-002173

In a conventional manufacturing method, an adhesive layer is temporarily formed by applying an adhesive to the entire surface of the resin film, and thereafter, a portion thereof is pre-cut so as to be equivalent to the wafer size, and the unnecessary portion is removed, so that there is a subsequent The amount of the portion of the agent layer that is not partially discarded is increased. problem. In particular, in the case of using a material which is expensive as the adhesive layer, it is strongly required to reduce the amount of the portion which is discarded as an unnecessary portion in terms of improving the yield of the product.

Moreover, in the case of manufacturing a diced-mud film, the conventional method has the following problems: formation of an adhesive layer, pre-cutting of an adhesive layer, removal of unnecessary portions, adhesion of an adhesive tape, and adhesive tape. These steps are pre-cut, and the number of steps is increased and the production line becomes longer. Due to the limitation of the length of the production line, etc., the following items must be carried out depending on the situation. In this case, the number of steps is further increased. The above matters are: after the pre-cutting of the adhesive layer, the temporary adhesion is separated from the adhesive layer. The film was wound into a roll shape, and then the production line was replaced, the separator was peeled off, and the adhesive tape was bonded to the adhesive layer, and the adhesive tape was pre-cut.

Further, when the adhesive tape is manufactured by a conventional method, the adhesive layer must be cut into a semiconductor wafer on the resin film on the support side, so that the edge of the support film is formed along the surface of the support film when the adhesive layer is cut. The problem of the cut of the cut portion of the layer of the agent. That is, as shown in FIG. 10, when the adhesive layer 12 is formed on the support film 11 and the adhesive layer 12 is cut, the outer peripheral portion of the adhesive layer 12 is vertically cut, and the tip of the cutting blade is used. The support film 11 forms a cut damage 40. In this case, since foreign matter such as film dust is likely to adhere to the slit portion by the dicing blade, it is desirable to suppress the occurrence of dicing damage as much as possible in order to improve the quality of the product.

Accordingly, it is a primary object of the present invention to provide a semiconductor wafer processing tape which can reduce the amount of adhesive used in the adhesive layer, simplify the manufacturing process (especially, reduce the number of cutting steps of the adhesive layer), and improve the quality of the product. method.

In order to solve the above problems, according to the present invention, there is provided a method of manufacturing a semiconductor wafer processing tape, comprising: a printing step of substantially the same size as a semiconductor wafer on a first resin film or An adhesive layer for gravure or gravure printing in a larger manner to form an adhesive layer; A drying step of drying the above-mentioned adhesive layer.

According to the present invention, the adhesive can be applied only to the necessary portion by screen printing or gravure printing of the adhesive in the printing step, so that it is not necessary to remove the unnecessary portion of the adhesive layer, so that the amount of the adhesive can be saved.

In this case, the cutting step of the adhesive layer can be reduced, the simplification of the manufacturing process can be achieved, and the dicing damage can be prevented from being formed on the first resin film, so that the quality of the product can be improved.

10‧‧‧Semiconductor wafer processing tape

11‧‧‧Support film (first resin film)

12‧‧‧ adhesive layer

12a‧‧‧ inclined section

12b‧‧‧ convex

13‧‧‧Adhesive layer

14‧‧‧Base film (second resin film)

15‧‧‧Cutting Tape

16‧‧‧ Cover film

Fig. 1 is a side view showing a schematic configuration of a semiconductor wafer processing belt according to a preferred embodiment (first embodiment) of the present invention.

Fig. 2 is a view showing a manufacturing step of a tape for processing a semiconductor wafer.

Fig. 3 is a conceptual diagram of a manufacturing apparatus for a semiconductor wafer processing belt.

4 is a cross-sectional view showing a schematic configuration of a semiconductor wafer processing belt formed by a conventional manufacturing method.

Fig. 5 is a view showing a modification of the adhesive layer of the semiconductor wafer processing belt of Fig. 1;

Fig. 6 is a side view of a semiconductor wafer processing belt according to a second embodiment.

Fig. 7 is a view for explaining a manufacturing procedure of a semiconductor wafer processing tape according to a second embodiment;

Fig. 8 is a side view of a semiconductor wafer processing belt according to a third embodiment.

Fig. 9 is a view for explaining a manufacturing procedure of a semiconductor wafer processing tape according to a third embodiment.

Figure 10 is a diagram for explaining the problem of the conventional manufacturing method.

Fig. 11 is a view for explaining the outer peripheral portion (inclined portion) of the adhesive layer of the sample of the embodiment of the present invention.

<First embodiment>

Hereinafter, a first embodiment of the present invention will be described with reference to the drawings.

Fig. 1 is a side view showing the semiconductor wafer processing belt 10 of the present embodiment.

The semiconductor wafer processing tape 10 is formed by sequentially laminating a film 11 for supporting a first resin film, an adhesive layer 12 composed of an adhesive for a die bonding, an adhesive layer 13 made of an adhesive for dicing, and The base film 14 constituting the second resin film is formed.

The support film 11 is used to support the adhesive layer 12 when the semiconductor wafer processing tape 10 is manufactured, and also functions as a protective film of the adhesive layer 12.

The adhesive layer 12 is bonded to the semiconductor wafer, and is peeled off from the adhesive layer 13 and attached to the wafer when the wafer is picked up, and is used as an adhesive for fixing the wafer to the substrate or the lead frame.

The adhesive layer 13 is used as an adhesive for holding a semiconductor wafer and a singulated wafer during dicing.

The substrate film 14 is used to break the expandable tape of the wafer and the adhesive layer 12 by the expansion after dicing.

First, the components of each layer will be described.

<Support film (11)>

As the film 11 for support, a polyethylene terephthalate (PET) film can be preferably used. Further, in addition to the polyethylene terephthalate film, a plastic film such as a polytetrafluoroethylene film, a polyethylene film, a polypropylene film, a polymethylpentene film, or a polyimide film may be used. The film can also be used after demolding the surface.

<Binder layer (12)>

The adhesive layer 12 is not particularly limited as long as it is a polycrystalline adhesive tape generally used in a dicing-bonded ribbon, but if it is flexible and easily broken, the yield of the semiconductor manufacturing step is improved. The surface is better.

In order to form a flexible and easily rupturable adhesive layer, it is preferred to satisfy at least one of (i) to (iii), preferably two conditions, more preferably all three. The conditions are appropriate.

(i) The elongation at break at 25 ° C in the B-stage state of the adhesive layer is 40% or less, preferably 10% or less, more preferably 3% or less.

(ii) The breaking strength at 25 ° C of the adhesive layer 12 in the B-stage state is 0.1 MPa or more and 10 MPa or less.

(iii) The elastic modulus obtained by dynamic viscoelasticity measurement at 25 ° C and 10 Hz is 1 to 3000 MPa, and the elastic modulus obtained by dynamic viscoelasticity measurement at 25 ° C and 900 Hz is 4000 to 20000 MPa.

When the elongation at break exceeds 40%, the ease of cracking is insufficient and the yield of the semiconductor manufacturing step may not be improved, which is not appropriate.

Similarly, when the breaking strength is less than 0.1 MPa, there is a possibility that the flexibility of the adhesive layer 12 is insufficient and the workability is lowered. When it exceeds 10 MPa, the ease of cracking is insufficient and the semiconductor manufacturing steps are good. The rate does not increase and is therefore inappropriate.

The modulus of elasticity at 25 ° C and 10 Hz is preferably from 10 to 1500 MPa, more preferably from 100 to 1200 MPa. When the modulus of elasticity is less than 1 MPa, there is a possibility that the ease of cracking is insufficient and the yield of the semiconductor manufacturing step does not increase. When the modulus exceeds 3,000 MPa, there is a possibility that cracks may occur in the adhesive layer 12 during the operation, which is not preferable. . Further, the modulus of elasticity at 25 ° C and 900 Hz is preferably 5,000 to 15,000 MPa. When the modulus of elasticity is less than 4,000 MPa, it tends to be difficult to be broken, and if it exceeds 20,000 MPa, cracking tends to occur during handling.

The component constituting the adhesive layer 12 is not particularly limited as long as it satisfies the above characteristics, and preferably contains a polymer component, a thermosetting component, and a filler, and may further contain a curing accelerator and a catalyst, in addition to these. Additives, coupling agents, and the like.

Further, there is a tendency that the higher the polymer component contained in the adhesive layer 12 and the smaller the filler, the higher the breaking strength and the elongation at break, and the smaller the polymer component and the more the filler, the elastic modulus. The number becomes higher. Therefore, it is important to adjust the components (component ratio) in such a manner that the breaking strength and the elongation at break become within a certain numerical range described above.

The polymer component is not particularly limited as long as it satisfies the above characteristics of the adhesive layer 12, and preferably has a glass transition temperature (hereinafter referred to as Tg) of -30 ° C to 50 ° C and a weight average molecular weight of 10,000 to 100. Million. When the Tg exceeds 50 ° C, it is not suitable in terms of the low flexibility of the adhesive layer 12, and if the Tg is less than -30 ° C, the flexibility of the adhesive layer 12 is too high, so that the adhesive layer 12 is hard to be broken. In terms of aspects, it is not appropriate. In addition, when the weight average molecular weight is less than 10,000, the heat resistance of the adhesive layer 12 is not suitable. When the molecular weight exceeds 1,000,000, the fluidity of the adhesive layer 12 is not suitable. .

From the viewpoint of easiness of rupture of the adhesive layer 12 and heat resistance, a polymer component having a Tg of -20 ° C to 40 ° C and a weight average molecular weight of 100,000 to 900,000 is preferable, and a Tg is preferably -10. A polymer component having a weight average molecular weight of 50,000 to 1,000,000 at a temperature of from ° C to 50 ° C, particularly preferably a polymer component having a Tg of from -10 ° C to 30 ° C and a weight average molecular weight of from 500,000 to 900,000.

Further, the weight average molecular weight is a polystyrene-converted value obtained by gel permeation chromatography (GPC) using a calibration curve of standard polystyrene, and is measured in the following manner: L manufactured by Hitachi, Ltd. -6000 as a pump, using Gelpack GL-R440, Gelpack GL-R450 and Gelpack GL-R400M manufactured by Hitachi Chemical Co., Ltd. (each 10.7mm ×300 mm) The column which was sequentially connected was used as a column, and tetrahydrofuran was used as an eluent, and a sample obtained by dissolving 120 mg of a sample in 5 ml of THF was measured at a flow rate of 1.75 mL/min.

Specific examples of the polymer component include polyimine, polystyrene, polyethylene, polyester, polyamine, butadiene rubber, acrylic rubber, (meth)acrylic resin, and urethane formate. Resin, polyphenylene ether resin, polyether oxime imide resin, phenoxy resin, modified polyphenylene ether Resin, phenoxy resin, polycarbonate, mixtures of these, and the like.

More preferably, it is a polymer component containing a functional monomer and having a weight average molecular weight of 100,000 or more, and a ring-containing monomer having a functional monomer such as glycidyl acrylate or glycidyl methacrylate and having a weight average molecular weight of 100,000 or more. An oxy (meth)acrylic acid copolymer or the like. As the epoxy group-containing (meth)acrylic copolymer, for example, a (meth) acrylate copolymer, an acryl rubber, or the like can be used, and an acrylic rubber is more preferable. The acrylic rubber is a rubber mainly composed of a copolymer of butyl acrylate and acrylonitrile, or a copolymer of acrylate or acrylonitrile, or the like.

The polymer component is preferably contained in an amount of 50% by weight or less, more preferably 35% by weight or less, even more preferably 25% by weight or more and 35 parts by weight based on the weight of the total weight of the adhesive layer 12 to remove the filler. Below weight%. When the blending amount of the polymer component is large, the fracture property of the adhesive layer 12 tends to be deteriorated. When the blending amount is small, the fluidity at the time of the next step is excessively large, and thus voids tend to occur.

Examples of the thermosetting component include an epoxy resin, a cyanate resin, a phenol resin, and a curing agent thereof. From the viewpoint of high heat resistance, an epoxy resin is preferred. The epoxy resin is not particularly limited as long as it has a function of curing. A difunctional epoxy resin such as a bisphenol A type epoxy resin, a novolak type epoxy resin such as a phenol novolak type epoxy resin or a cresol novolak type epoxy resin, or the like can be used. Further, a well-known person such as a polyfunctional epoxy resin, a glycidylamine type epoxy resin, a hetero ring-containing epoxy resin or an alicyclic epoxy resin can be used.

Further, in the adhesive layer 12 of the present invention, it is preferable to reduce the breaking strength and elongation at break of the adhesive layer 12 in the B-stage state, to improve the workability of the adhesive, to improve the thermal conductivity, to adjust the melt viscosity, and to impart a shake. The filler is blended for the purpose of denaturation or the like, preferably an inorganic filler is blended.

Examples of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium citrate, magnesium citrate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, and boron nitride. , Crystalline cerium oxide, amorphous cerium oxide, cerium oxide, and the like. In order to improve thermal conductivity, alumina, aluminum nitride, boron nitride, crystalline cerium oxide, amorphous cerium oxide, or the like is preferable. In order to adjust the melt viscosity or impart shake, it is preferably aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium citrate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, crystalline cerium oxide, non- Crystalline cerium oxide and the like. Moreover, in order to improve moisture resistance, alumina, cerium oxide, aluminum hydroxide, and cerium oxide are preferable.

The amount of the filler is preferably 5% by weight or more and 90% by weight or less based on the total weight of the adhesive layer 12, and more preferably 35% by weight or more and 70% by weight or less. When the blending amount is increased, problems such as an increase in the storage modulus of the adhesive layer 12, a decrease in adhesion, and a decrease in electrical characteristics due to residual voids are likely to occur, and therefore it is particularly preferably 90% by weight or less. Further, the specific gravity of the filler is preferably from 1 to 10 g/cm ³ .

<Adhesive layer (13)>

The component of the pressure-sensitive adhesive layer 13 is not particularly limited as long as it has such a degree that it does not cause peeling of the adhesive layer 12 during the dicing, and does not cause a problem such as wafer flying out, and the adhesive layer at the time of picking up. 12 peeling can be easily changed characteristics. In order to improve the pick-up property after dicing, the adhesive layer 13 is preferably a radiation-curable one, and is preferably a material which is easily peeled off from the adhesive layer 12 after curing.

For example, it is preferable to contain a compound (A) having a radiation curable carbon-carbon double bond having an iodine value of 0.5 to 20 in the molecule, and at least one selected from the group consisting of polyisocyanates, melamine-formaldehyde resins, and epoxy resins. The compound (B) is subjected to an addition reaction. Here, the term "radiation" means an ionizing radiation such as ultraviolet light or an electron beam.

The compound (A) which is one of the main components of the adhesive layer 13 will be described.

The amount of introduction of the radiation-curable carbon-carbon double bond of the compound (A) is from 0.5 to 20, preferably from 0.8 to 10, in terms of iodine value. When the iodine value is 0.5 or more, the effect of reducing the adhesion after radiation irradiation can be obtained, and if the iodine value is 20 or less, the fluidity of the adhesive after radiation irradiation is sufficient. The extended element gap can be sufficiently obtained, so that the problem that image recognition of each element at the time of picking becomes difficult can be suppressed. Further, the compound (A) itself has stability and is easy to manufacture.

The glass transition point of the compound (A) is preferably -70 ° C to 0 ° C, more preferably -66 ° C to -28 ° C. When the glass transition point Tg is -70 ° C or more, the heat resistance to the heat accompanying the radiation irradiation is sufficient, and if it is 0 ° C or less, the scattering of the semiconductor wafer after the dicing of the wafer having a rough surface state can be sufficiently obtained. effect.

The above compound (A) may be produced by any method, and for example, an acrylic copolymer may be mixed with a compound having a radiation-curable carbon-carbon double bond; or an acrylic copolymer having a functional group may be copolymerized. The methacrylic copolymer (A1) having a functional group or a compound (A2) having a functional group reactive with the functional group and having a radiation curable carbon-carbon double bond is obtained.

The molecular weight of the compound (A) is preferably from about 300,000 to about 1,000,000. If it is less than 300,000, the cohesive force generated by radiation irradiation becomes small, and when the wafer is diced, the element is likely to be shifted, and image recognition becomes difficult. In order to prevent the offset of the element as much as possible, it is preferred that the molecular weight is 400,000 or more. Moreover, when the molecular weight exceeds 1,000,000, there is a possibility of gelation at the time of synthesis and at the time of coating. Further, the molecular weight in the present invention means a weight average molecular weight in terms of polystyrene.

Further, when the compound (A) has an OH group having a hydroxyl value of 5 to 100, since the adhesion after radiation irradiation can be reduced, the risk of picking up errors can be further reduced, which is preferable. Further, the compound (A) is preferably a COOH group having an acid value of 0.5 to 30. When the hydroxyl value of the compound (A) is too low, the effect of lowering the adhesive force after radiation irradiation is insufficient, and if it is too high, the fluidity of the adhesive after radiation irradiation tends to be impaired. Moreover, if the acid value is too low, the effect of improving the belt recovery property is insufficient, and if it is too high, the fluidity of the adhesive tends to be impaired.

Next, the compound (B) which is another main component of the adhesive layer will be described.

The compound (B) is at least one selected from the group consisting of polyisocyanates, melamine-formaldehyde resins, and epoxy resins, and may be used singly or in combination of two or more. The compound (B) functions as a crosslinking agent, and an adhesive having a compound (A) and (B) as a main component can be obtained by a crosslinking structure formed by reacting with the compound (A) or a substrate film. The cohesive force is increased after the adhesive is applied.

The amount of the compound (B) to be added is preferably 0.1 to 10 parts by weight, more preferably 0.4 to 3 parts by weight, per 100 parts by weight of the compound (A). When the amount is less than 0.1 part by weight, the cohesive force-improving effect tends to be insufficient. When the amount is more than 10 parts by weight, the curing reaction rapidly proceeds during the mixing and coating operation of the adhesive to form a crosslinked structure, which is harmful. The tendency of workability.

Further, it is preferred to contain a photopolymerization initiator (C) in the adhesive layer 13.

The photopolymerization initiator (C) contained in the adhesive layer 13 is not particularly limited, and a conventional one can be used. The amount of the photopolymerization initiator (C) to be added is preferably 0.01 to 5 parts by weight, more preferably 0.01 to 4 parts by weight, per 100 parts by weight of the compound (A).

Further, an adhesion-imparting agent, an adhesion regulator, a surfactant, or the like, or other modifiers and conventional components may be blended as needed. The thickness of the adhesive layer 13 is not particularly limited and is usually 2 to 50 μm.

<Substrate film (14)>

The base film 14 is preferably a radiation-transmitting property. Specifically, a plastic, a rubber, or the like is usually used, and the radiation-curable adhesive is not particularly limited as long as the radiation can be transmitted. In the case of hardening, as the substrate, those having good light transmittance can be selected.

Examples of the polymer which can be selected as such a substrate include polyethylene, polypropylene, ethylene-propylene copolymer, polybutene-1, poly-4-methylpentene-1, ethylene-vinyl acetate. a homopolymer or copolymer of an α-olefin such as an ester copolymer, an ethylene-ethyl acrylate copolymer, an ethylene-methyl acrylate copolymer, an ethylene-acrylic acid copolymer, an ionic polymer, or the like Compound; engineering plastics such as polyethylene terephthalate, polycarbonate, polymethyl methacrylate; polyurethane, styrene-ethylene-butylene or pentene copolymer, polyamine- a thermoplastic elastomer such as a polyol copolymer; and a mixture thereof.

Further, in order to increase the element gap, it is preferable that necking (partial elongation due to poor propagation of force generated when the base film 14 is radially extended) is extremely small, and examples thereof include polyethylene glycol, and A styrene-ethylene-butylene or pentene copolymer or the like having a defined molecular weight and a styrene content, in order to prevent elongation or bending at the time of crystal cutting, is effective in using a crosslinked base film 14. The thickness of the base film 14 is usually suitably from 20 to 300 μm from the viewpoint of the tensile properties and the radiation penetration.

Further, when the surface of the base film 14 opposite to the side on which the radiation-curable adhesive layer 13 is applied is pleated or lubricant-coated, adhesion prevention is prevented, and radial stretching is prevented. It is preferable to cut the contact between the crystal ribbon and the jig to prevent the neck film 14 from being necked, etc., and the above-mentioned dicing tape is formed on the base film 14 to form the adhesive layer 13.

<Method of Manufacturing Semiconductor Wafer Processing Belt>

The manufacturing of the semiconductor wafer processing tape 10 described above is carried out by the steps shown in FIG.

First, the support film 11 is taken out (step A1), and a printing step is performed by performing screen printing or gravure printing on the extracted support film 11 by using an adhesive containing the components constituting the adhesive layer 12 described above. The adhesive layer 12 is formed (step A2).

Next, a drying step (step A3) of drying the printed adhesive layer 12 is performed.

Thereafter, a bonding step of forming the dicing tape 15 on which the adhesive layer 13 is formed on the base film 14 with the film for support in the adhesive layer 12 formed on the film for support 11 is performed. The 11 facing faces are laminated with the adhesive layer 12 in contact with the adhesive layer 13, thereby forming a semiconductor wafer processing tape 10 (step A4).

Then, the semiconductor wafer processing tape 10 is finally wound into a roll shape (step A5).

FIG. 3 shows a semiconductor wafer processing tape manufactured by such a manufacturing method. A conceptual diagram of a manufacturing device 30 of 10.

The manufacturing apparatus 30 is configured by sequentially arranging the extracting machine 31 for extracting the support film 11, the printing machine 32 for performing the printing step, the drying furnace 35 for performing the drying step, the bonding portion 36 for performing the bonding step, and the wound semiconductor crystal A winder 38 for the round processing belt 10.

Hereinafter, the configuration of the manufacturing apparatus 30 will be described, and the processing of each step of the manufacturing method of the semiconductor wafer processing belt 10 using the same will be described.

[Step A1 (Extraction Step)]

The extracting machine 31 holds the roll-shaped supporting film 11 and sequentially extracts the supporting film 11 from the extracting machine 31 as the manufacturing operation progresses. The support film 11 taken out from the extractor 31 is transported to the printer 32 which performs the printing step.

[Step A2 (printing step)]

The printer 32 forms the adhesive layer 12 on the support film 11 by a printing method. By the printing machine 32, a plurality of adhesive layers 12 which are substantially the same size or larger than the size of the semiconductor wafer are intermittently formed on the fed support film 11. The term "substantially the same" as used herein refers to a size that is smaller than the size of a semiconductor wafer, but it refers to at least the size of all of the wafers divided from the semiconductor wafer.

In the printing step, an adhesive is used as an ink to form an adhesive layer 12 having a shape equivalent to the size of the semiconductor wafer. The "shape corresponding to the size of the semiconductor wafer" is preferably a circular shape. If the semiconductor wafer has an orientation flat or a notch, it may include a shape corresponding to its shape, and only has a semiconductor The area of the wafer may be polygonal.

Thus, by forming the adhesive layer 12 of a shape corresponding to the size of the semiconductor wafer by the printing step, the step of cutting the adhesive layer 12 into the wafer size can be omitted thereafter.

That is, in this manufacturing method, it is not necessary to perform a process of cutting the adhesive layer 12 into a cutting step such as a shape corresponding to the size of the semiconductor wafer. Thereby, it is possible to prevent dicing damage from occurring in the adhesive layer 12 or the support film 11, and it is possible to prevent foreign matter from remaining due to the occurrence of dicing damage, thereby making it possible to The quality of high products. Moreover, since printing is performed only in an essential part, the loss of the material used for the adhesive layer 12 can be drastically reduced.

As the printing method of the printing press 32, screen printing, gravure printing, letterpress printing, intaglio printing, inkjet printing, or the like can be used, and the thickness of the desired adhesive layer 12 can be selected. Printing method.

In the above printing method, the screen printing method and the gravure printing method are suitable for pattern printing of the semiconductor wafer processing belt 10, and in the printing step, screen printing or gravure printing is performed to form the adhesive layer 12.

Regarding screen printing, although it depends on the solid phase fraction of the adhesive material (adhesive) and the mesh size of the screen, it can usually be printed in a thickness of several μm to several hundred μm, so that it can be adjusted in a wide range. Since the thickness is printed once every time, it is possible to manufacture a product with high productivity.

As a printing machine or printing method for screen printing, there is a one-piece printing machine, a roll-to-roll type or a roll-to-roll type rotary screen printing machine that can continuously print a single-piece printing, if a rotary type is used. The screen printing machine can perform higher speed printing than the conventional one-piece screen printing machine, thereby further improving production efficiency.

In the gravure printing, the thickness of the coating film is about several μm per one time, but the adhesive layer 12 can be manufactured at a high speed in a rotating manner. Therefore, the adhesive layer 12 (several μm) having a small thickness is used. In the case of an object, it is advantageous for productivity.

The printing method of screen printing or gravure printing may be selected according to the thickness of the adhesive layer 12 to be formed, and it is preferable to select gravure printing when the thickness of the adhesive layer 12 is about several μm to 10 μm. Screen printing is selected when the thickness of the subsequent layer is 5 to 10 μm or more.

The adhesive (adhesive for adhesive) used in the printing step is obtained by dissolving or dispersing a material contained in the above-mentioned adhesive layer 12 in a solvent. The solvent is not particularly limited, and is preferably cyclohexanone or methyl ethyl ketone.

The solvent is mixed in an amount of 5 to 80% by weight, and the viscosity at the ambient temperature at the time of printing the adhesive is adjusted to an optimum range.

The range (area) from the extractor 31 to the inlet of the drying furnace 35 via the printer 32 is disposed in the temperature and humidity control unit 33, and the temperature and humidity can be adjusted by the temperature and humidity adjusting unit 34 in the temperature and humidity control unit 33. Keep it at a specific value. The temperature and humidity of the temperature and humidity control unit 33 can be selected according to the composition of the adhesive or the type of the solvent, and the like.

In addition, it is only necessary to arrange at least the portion to be printed in the temperature and humidity control unit 33, but it is preferably disposed in the temperature and humidity control unit 33 from the portion where the printing is performed to the drying furnace 35. However, from the viewpoint of providing a high-quality product, it is preferable to manufacture it by the apparatus configuration shown in FIG. 3, but it is based on the length of the drying furnace, the indoor environment of the manufacturing site, and the kind of solvent contained in the adhesive. Since it is different, it is not necessary to have the temperature and humidity control unit 33 or the temperature and humidity regulator 34 in the manufacturing equipment.

In consideration of the release property or the thickness precision at the time of screen printing or gravure printing, and the viscosity change of the adhesive, it is preferable to suppress the evaporation rate of the solvent contained in the adhesive as much as possible. However, if the solvent having a late drying effect is excessively mixed in the adhesive, the productivity in the drying step is lowered and the equipment cost is increased. Therefore, the temperature and humidity management in the printing step environment is performed, and the evaporation rate is controlled. In the temperature and humidity management, it is preferably 10° C. or lower, and preferably 5° C. or lower, and the vapor pressure of the solvent contained in the adhesive is preferably 100 mmHg or less, more preferably 50 mmHg or less. In particular, it is preferably set to 30 mmHg or less. By performing the temperature and humidity management in this manner, the evaporation rate of the solvent contained in the adhesive can be suppressed, and the viscosity of the adhesive can be stabilized.

In the case where the adhesive is applied by screen printing, the adhesive layer 12 has a characteristic surface and cross-sectional shape, and thus is manufactured by a coating method using a usual coater or a cross-cut method using a dicing blade. Compared with the products, it is advantageous in terms of quality.

Furthermore, in the case of screen printing, it is preferred to adjust the viscosity of the adhesive to 6 Pa‧s. Lower, preferably 0.05 to 5 Pa‧s (0.05 Pa‧s or more and 5 Pa‧s or less). In the case where the viscosity of the adhesive is small, for example, less than 0.05 Pa‧s, there is a possibility that the adhesive penetrates from the screen and the printing cannot be performed well, so care must be taken.

In the case of gravure printing, it is preferred to adjust the viscosity of the adhesive to 10 Pa ‧ or less, preferably 0.01 to several Pa ‧ (0.01 Pa ‧ or more and several Pa ‧ s or less). The reason for this is that it is difficult for the adhesive to leave the plate cylinder at the time of printing, and unevenness in transfer of the adhesive is caused in the film 11 for support, which affects the quality of printing (pinholes, etc.).

Further, in the gravure printing, the pattern printing is performed in the same manner as the screen printing, and therefore the same effect as that described in the screen printing can be expected.

[Step A3 (Drying Step)]

The support film 11 having the adhesive layer 12 formed by the printing step is sent to a drying furnace 35 which performs a drying step of volatilizing the solvent contained in the adhesive layer 12.

In the drying step, the temperature or drying time in the drying furnace 35 is appropriately selected depending on the composition of the adhesive or the type of the solvent, etc., and it is preferred to dry the adhesive layer 12 at a temperature of from room temperature to 200 ° C for several minutes.

[Step A4 (Finishing Step)]

The support film 11 which has dried the adhesive layer 12 by the drying step is sent to the bonding portion 36 which performs the bonding step of bonding to the crystal cutting tape 15 on which the adhesive layer 13 is formed on the base film 14. The subsequent layer 12 has a shape corresponding to the shape of the semiconductor wafer by the printing step, and the bonding step can be performed after the drying step. Thereby, the length of the manufacturing line can be shortened.

In the bonding step (bonding portion 36), the supporting film 11 and the dicing tape 15 are sandwiched between the rolls 37, and a predetermined pressure is applied between the rolls 37 to form the adhesive layer 12 on the film 11 for support. The support film 11 is bonded to the dicing tape 15 in such a manner that the adhesive layer 13 of the dicing tape 15 is in contact with each other. The pressure between the rolls 37 can be appropriately set, and it is preferably carried out at a line pressure of 1 to 5 MPa. Thereby, the support film 11, the adhesive layer 12, the adhesive layer 13, and the base film 14 are sequentially laminated. The semiconductor wafer processing tape 10 is used.

[Step A5 (winding step)]

The semiconductor wafer processing tape 10 is wound by the winder 38 to form the semiconductor wafer processing tape 10 into a roll shape.

According to the above embodiment, in the printing step, the adhesive layer 12 is formed by screen printing or gravure printing using the adhesive for performing the viscosity adjustment, so that the waste generated by the removal of the unnecessary portion of the adhesive layer 12 can be eliminated. Save on the amount of adhesive used.

Further, according to the present embodiment, since the dicing step of the unnecessary portion of the adhesive layer 12 is not required, the manufacturing steps of the semiconductor wafer processing tape can be simplified, and the foreign matter remaining due to the occurrence of dicing damage can be prevented. It can also improve the quality of the product.

Regarding the simplification of the manufacturing steps, the following effects are also obtained.

That is, in the conventional manufacturing method, as described in the paragraph 0006, in the case of the limitation of the length of the production line, etc., it is necessary to form the formation of the adhesive layer, the pre-cutting of the adhesive layer, the bonding of the separator, and the production line. Change, peeling of the separator, etc. In this case, when the adhesive layer is bonded to the separator, in order to improve the adhesion, it is necessary to perform the bonding treatment by heating the surface of the heat roller in the range of about 40 to several tens of degrees C, and further, After that, the adhesive tape (cutting tape 15) must be attached after peeling off the separator.

On the other hand, in the bonding step of the present embodiment, since the adhesive layer 12 is directly bonded to the adhesive layer 13, the adhesiveness is high, and it can be bonded at normal temperature without using a heating roll. Therefore, according to the present embodiment, not only the length of the manufacturing line can be shortened, but also the heating roll apparatus which is necessary in the conventional manufacturing method is not required, and the investment in equipment can be suppressed.

The quality of the product is also described in detail in conjunction with the suppression of the occurrence of dicing damage.

A cross section of the diced-bonded ribbon 50 produced by the conventional method is shown in Fig. 4.

As can be seen from FIG. 4, in the dicing-bonding ribbon 50, the outer periphery of the adhesive layer 12 is pre-cut. The blade is cut substantially vertically, and a cutting damage 40 is formed on the support film 11. Here, the term "cutting damage (40)" refers to a state in which the surface of the support film 11 on the side of the adhesive layer 12 has a slit like a depression. In this case, when the adhesive layer 12 is bonded to the dicing tape 15, there is a foreign matter remaining in the portion accompanying the formation of the dicing damage 40, or a void is formed in the outer periphery of the adhesive layer 12. possibility.

On the other hand, in the present embodiment, the viscosity of the adhesive is adjusted to an optimum range (preferably 0.05 to 5 Pa‧s in the case of screen printing, and preferably 0.01 to Pa in the case of gravure printing). ‧ s) or controlling the temperature and humidity of the printing environment, and when the adhesive layer 12 is formed by screen printing or gravure printing, as shown in FIG. 1 , the cutting film 40 is not formed on the film 11 for support, and the adhesive layer is formed. The outer peripheral portion (side edge portion) 12 is formed with an inclined portion 12a that is gently inclined when viewed in cross section, so that the adhesion between the adhesive layer 12 and the adhesive layer 13 is improved (improved). It also becomes less prone to voids.

Moreover, when the viscosity of the adhesive is large (for example, when it is about 6 Pa ‧ in the case of screen printing), as shown in FIG. 5, the thickness of the peripheral portion of the adhesive layer 12 is slightly increased, and the thickness is formed. In the cross-sectional view, the convex portion 12b having a small convex shape is formed (in the range of about 1 mm from the outer peripheral end, the thickness of the contact with the semiconductor wafer is increased by about ~30%). In this case, the adhesion between the outer peripheral portion of the adhesive layer 12 and the adhesive layer 13 is improved, and lamination of the adhesive layer 12 and the dicing tape 15 can be favorably performed.

Further, the inner side (center side) of the outer peripheral portion of the printed adhesive layer 12 can be suppressed to a practically problem-free thickness precision by the screen. Therefore, the semiconductor wafer is bonded to the smooth surface side of the adhesive layer 12 after being peeled off from the support film 11, so that it is not affected by the convex portion 12b of the outer peripheral portion of the adhesive layer 12. However, in terms of the pick-up property of the semiconductor wafer, it is preferable to print the adhesive in a manner larger than at least the size of all the wafers which are covered from the semiconductor wafer, and the formation of the convex portion 12b of the adhesive layer 12. The printed area of the adhesive layer 12 is selected (designed) slightly larger than the size of the semiconductor wafer in such a manner that the range does not overlap with the semiconductor wafer.

<Second embodiment>

Next, a second embodiment will be described.

It is to be noted that the same components as those of the above-described first embodiment are basically the same as those in the first embodiment, and the same reference numerals will be given to the same components, and the description thereof will be omitted.

Fig. 6 is a side view showing the semiconductor wafer processing tape 10 of the present embodiment.

In the present embodiment, the adhesive layer 13 is also formed by a printing method.

The manufacturing of the semiconductor wafer processing tape 10 of the present embodiment is carried out by the procedure shown in FIG.

In the step of FIG. 7, instead of the laminating step of the laminated dicing tape 15 in the step shown in FIG. 2 (step A4), the laminating step of laminating the circularly printed dicing tape 15 is performed ( Step A11).

The dicing tape 15 used in the bonding step (step A11) is formed on the base film 14 constituting the resin film to form a circular adhesive layer 13 which is substantially the same as or larger than the size of the annular frame. Adult. The term "substantially the same" as used herein also includes a dimension smaller than the size (outer diameter) of the annular frame, but it means a size at least larger than the inner diameter of the annular frame and in contact with the annular frame.

In the bonding step, the support film 11 and the dicing tape 15 are bonded in such a manner that the center of the adhesive layer 12 formed in a circular shape coincides with the center of the adhesive layer 13 formed in a circular shape to form a concentric circle. .

The adhesive layer 13 of the dicing tape 15 may also be formed in a circular shape having a size substantially the same as that of the rounded adhesive layer 12, but is preferably formed to be larger than the adhesive layer 12.

If the adhesive layer 13 is formed to have a larger circular shape than the adhesive layer 12, the adhesive layer 12 is provided on the portion where the semiconductor wafer is bonded, and the adhesive layer 12 is absent only in the portion where the annular frame is bonded. Adhesive layer 13. Usually, the adhesive layer 12 is difficult to be peeled off from the adherend, so that the annular frame can be attached to the adhesive layer 13 by the above design, and the obtained frame can be peeled off in the ring frame after use. It is not easy to produce the effect of paste residue.

The dicing tape 15 is produced by the same steps as the steps (steps A1 to A3) of forming the adhesive layer 12 on the film for support 11.

That is, the dicing tape 15 is produced by a printing step of forming the adhesive layer 13 by the printing method on the base film 14, and a drying step of drying the printed adhesive layer 13.

The adhesive (the adhesive for dicing) used in the printing step can be obtained by dissolving or dispersing the material contained in the above-mentioned adhesive layer 13 in a solvent.

The solvent is not particularly limited, and it is preferably prepared so that the viscosity of the adhesive is 0.05 to 5 Pa‧s, more preferably 0.05 to 1 Pa‧s.

Further, it is preferably 10° C. or less, more preferably 5° C. or less, and more preferably a vapor pressure of a solvent contained in the adhesive is 100 mmHg or less, more preferably 10° C. or less. The thickness is preferably 50 mmHg or less, and particularly preferably 30 mmHg or less. By performing temperature and humidity management in this manner, the evaporation rate of the solvent contained in the adhesive can be suppressed, and the viscosity of the adhesive can be stabilized.

Further, when the temperature and humidity are managed in the printing step environment, condensation may occur depending on the situation, and it is preferable to provide a heat insulating material on the wall surface between the temperature and humidity control unit 33 and the drying furnace 35. Or, temperature and humidity management or the like is performed in stages from the printing to the drying furnace 35.

As described above, the dicing tape 15 is also formed by the step of forming the adhesive layer 13 having a shape corresponding to the size of the annular frame by the printing step, whereby the step of cutting the adhesive layer 13 can be omitted, and the adhesive layer can be prevented. 13 or the substrate film 14 produces a cutting damage. Thereby, it is possible to prevent foreign matter from remaining due to the occurrence of dicing damage, and it is possible to improve the quality of the product. Further, since the printing is performed only in the necessary portion, the loss of the material for the adhesive layer 13 can be greatly reduced.

In the conventional method, when a multi-layered strip such as a diced-bonded ribbon is produced, the adhesive layer is cut into a semiconductor wafer after the adhesive layer is formed, and then the dicing tape is attached and then cut. The side of the crystal ribbon is also cut by cutting the outer peripheral surface. In this case, the cutting step is required each time the film is laminated, and a plurality of steps are required.

On the other hand, by forming the adhesive layer 12 and the adhesive layer 13 by the printing process as in the present embodiment, it is possible to manufacture in a simple procedure, and the production efficiency of the multilayered tape can be improved.

<Third embodiment>

Next, a third embodiment will be described.

It is to be noted that the same components as those in the first embodiment are basically the same as those in the first embodiment, and the same reference numerals will be given to the same components, and the description thereof will be omitted.

Fig. 8 is a side view showing the semiconductor wafer processing tape 10 of the present embodiment.

The semiconductor wafer processing tape 10 of the present embodiment has only the adhesive layer 12.

The manufacturing of the semiconductor wafer processing tape 10 of the present embodiment is carried out by the procedure shown in FIG.

In the step of Fig. 9, in place of the laminating step of the laminated dicing tape in the step shown in Fig. 2 (step A4), the laminating step of laminating the cover film 16 is carried out (step A21).

Further, as the cover film 16, a film made of a material which can be used for the support film 11 can be used.

Further, in the above-described first to third embodiments, a diced-bonded-polycrystalline tape or a die-bonded tape is exemplified as a semiconductor wafer processing tape 10, and a dicing tape or a semiconductor wafer is polished. The present invention can be applied to a tape manufacturing step of various semiconductor wafer processing and protection applications such as a surface protection tape for protecting a circuit pattern forming surface (wafer surface) of a semiconductor wafer in the back surface polishing step.

Moreover, the method of continuously manufacturing the semiconductor wafer processing tape 10 using the long support film 11 is shown, but this method can also be applied to the method of manufacturing the semiconductor wafer processing tape 10 for one semiconductor wafer. invention.

Next, an embodiment for clarifying the effects of the present invention will be described in detail. It is to be understood that the invention is not limited to the embodiments.

[Example 1]

[Production of adhesive tape]

(1) Production of adhesive tape 1

An acrylic copolymer compound composed of isooctyl acrylate, 2-hydroxyethyl acrylate and methyl methacrylate having a mass average molecular weight of 800,000 and a glass transition temperature of -30 ° C was produced.

Then, 20 parts by weight of trimethylolpropane trimethacrylate as a compound having a radiation curable carbon-carbon double bond, and a polyisocyanate compound Coronate L as a curing agent are added to 100 parts by weight of the copolymer compound. 7 parts by weight of Irgacure 184 (manufactured by Ciba-Geigy Japan Co., Ltd., trade name) as a photopolymerization initiator, and a radiation curable adhesive was obtained in an amount of 7 parts by weight (manufactured by Nippon Polyurethane Co., Ltd., trade name). .

The adhesive was applied onto a substrate film having a thickness of 100 μm composed of a polypropylene resin and a hydrogenated styrene-butadiene copolymer, and then dried by a hot air drying oven to obtain a dried thickness of 10 μm. The adhesive tape 1 of the laminate of the adhesive layer and the substrate film.

(2) Production of adhesive tape 2

An acrylic copolymer compound composed of isodecyl acrylate, 2-ethyl acrylate and methyl methacrylate having a mass average molecular weight of 800,000 and a glass transition temperature of -30 ° C was produced.

Then, 9 parts by weight of a polyisocyanate compound Coronate L (manufactured by Nippon Polyurethane Co., Ltd., trade name) as a curing agent was added to 100 parts by weight of the copolymer compound to obtain an adhesive.

This adhesive is applied to the same base film as the adhesive tape 1 in the same manner as the adhesive tape 1, and dried to obtain an adhesive tape 2.

[Preparation of adhesive]

(1) Preparation of adhesive 1

10 parts by mass of methyl ethyl ketone was added to the following composition, stirred and mixed, and vacuum degassed to obtain an adhesive 1 which was composed of bisphenol F as an epoxy resin. Epoxy resin (using an epoxy equivalent of 160, trade name YD-8170C manufactured by Dongdu Chemical Co., Ltd.) 30 parts by weight, cresol novolac type epoxy resin (using epoxy equivalent 210, Dongdu Chemical Co., Ltd.) 10 parts by weight of a manufactured product name YDCN-703); a phenol novolak resin (a trade name Plyofen LF2882 manufactured by Dainippon Ink and Chemicals Co., Ltd.) as an epoxy resin hardener; 27 parts by weight; an acrylic copolymer ( Using a weight average molecular weight of 700,000, a Tg of 4 ° C, and a trade name of SG-708-6 manufactured by Nagase Chemtex Co., Ltd., 28 parts by weight by gel permeation chromatography; an imidazole hardening as a hardening accelerator accelerator (manufacturing Co. use of Shikoku Chemicals Curezol 2PZ-CN) 0.1 parts by weight; silicon dioxide filler (Admafine Co. manufactured using the S0-C2 (specific gravity: 2.2g / cm ³⁾⁾ 132 weight Parts; Silane coupling agent (trade name A-189 of Nippon Unicar Co., Ltd. manufactured) 0.25 parts by weight.

The viscosity of the obtained adhesive varnish was measured by a B-type viscometer (TVB-10 of Toki Sangyo Co., Ltd.), and as a result, the viscosity at 5 ° C was 5.0 Pa ‧ and the viscosity at 25 ° C was 4.5 Pa ‧ .

(2) Preparation of adhesive 2

The adhesive 2 was obtained in the same manner as the adhesive 1 except that 50 parts by mass of methyl ethyl ketone was added. The viscosity of the obtained adhesive varnish was measured, and as a result, the viscosity at 5 ° C was 1.0 Pa ‧ s, and the viscosity at 25 ° C was 0.05 Pa ‧ s.

(3) Preparation of adhesive 3

The adhesive 3 was obtained in the same manner as the adhesive 1 except that 60 parts by mass of methyl ethyl ketone was added. The viscosity of the obtained adhesive varnish was measured, and as a result, the viscosity at 5 ° C was 0.04 Pa‧s.

(4) Preparation of adhesive 4

In the same manner as the adhesive 1, except that 8.0 parts by mass of methyl ethyl ketone was added Agent 4. The viscosity of the obtained adhesive varnish was measured, and as a result, the viscosity at 5 ° C was 6.0 Pa ‧ .

(5) Preparation of adhesive 5

The adhesive 5 was obtained in the same manner as the adhesive 1 except that 5 parts by mass of methyl ethyl ketone was added. The viscosity of the obtained adhesive varnish was measured, and as a result, the viscosity at 5 ° C was 11.0 Pa ‧ .

(6) Preparation of adhesive 6

The adhesive 6 was obtained in the same manner as the adhesive 1 except that 80 parts by mass of methyl ethyl ketone was added. The viscosity of the obtained adhesive varnish was measured, and as a result, the viscosity at 5 ° C was 0.01 Pa ‧ s.

[Production of sample]

(1) Embodiment 1

On a PET film (thickness of 25 μm) as a film for support, the diameter is determined by a roll-to-roll type monolithic screen printing method. The adhesive 1 was formed by 320 mm, a printing thickness of 20 μm after drying, and a pitch of 60 mm to form an adhesive layer.

The temperature in the printing step is controlled to 5° C. and 40% RH in the environment of the printing unit, and the vapor pressure of the solvent in the temperature and humidity control unit is set to about 30 mmHg.

After the adhesive layer is formed by the printing step, it is dried in a drying oven at a temperature of 150 ° C for about 1 minute.

Thereafter, a bonding step of bonding the separately prepared adhesive tape 1 under a line pressure of 2 MPa was performed to fabricate a semiconductor wafer processing tape.

(2) Embodiment 2

A semiconductor wafer processing tape was produced in the same manner as in Example 1 except that the adhesive 2 was used instead of the adhesive 1.

(3) Embodiment 3

A half was produced in the same manner as in Example 1 except that the adhesive tape 2 was used instead of the adhesive tape 1. Conductor wafer processing tape.

(4) Embodiment 4

A semiconductor wafer processing tape was produced in the same manner as in Example 2 except that the adhesive tape 2 was used instead of the adhesive tape 1.

(5) Comparative Example 5

A semiconductor wafer processing tape was produced in the same manner as in Example 1 except that the adhesive 3 was used instead of the adhesive 1.

(6) Embodiment 6

A semiconductor wafer processing tape was produced in the same manner as in Example 1 except that the adhesive 4 was used instead of the adhesive 1.

(7) Embodiment 7

A semiconductor wafer processing tape was produced in the same manner as in Example 1 except that the temperature in the printing step was changed to room temperature (25 ° C).

(8) Example 8

A semiconductor wafer processing tape was produced in the same manner as in Example 2 except that the temperature in the printing step was changed to room temperature (25 ° C).

(9) Embodiment 9

On a PET film (thickness of 25 μm) as a film for support, by a gravure printing method, the diameter is The adhesive 2 was formed by printing 320 mm, a printed thickness of 5 μm after drying, and a pitch of 40 mm to form an adhesive layer.

The temperature and the like in the printing step were adjusted so that the printing portion environment became 5 ° C and 40% RH, and the vapor pressure of the solvent was set to about 30 mmHg.

After the adhesive layer is formed by the printing step, it is dried in a drying oven at a temperature of 150 ° C for about 1 minute.

Thereafter, a bonding step of bonding the separately prepared adhesive tape 2 at a line pressure of 2 MPa is performed. Used as a tape for semiconductor wafer processing.

(10) Embodiment 10

A semiconductor wafer processing tape was produced in the same manner as in Example 9 except that the adhesive 1 was used instead of the adhesive 2.

(11) Comparative Example 11

A semiconductor wafer processing tape was produced in the same manner as in Example 9 except that the adhesive 5 was used instead of the adhesive 2.

(12) Example 12

A semiconductor wafer processing tape was produced in the same manner as in Example 9 except that the adhesive 6 was used instead of the adhesive 2.

[Evaluation of sample (adhesive layer)]

(1) Breaking strength, elongation at break

For a sample having a width of 10 mm, a length of 30 mm, and a thickness of 20 μm, a tensile tester (a digital load meter SV55 manufactured by Ida Seisakusho Co., Ltd.) was used to measure stress and strain curves at a crosshead distance of 20 mm and a tensile speed of 0.5 m/min. The breaking strength and elongation at break at 25 ° C of the B layer state of the adhesive layer were obtained by the following formula.

Breaking strength (Pa) = maximum strength (N) / sectional area of the sample (m ² )

Elongation at break (%) = (length between the chucks of the specimen at break (mm) -20) / 20 × 100

(2) Elastic modulus (storage modulus)

The storage modulus of the B layer state of the adhesive layer was measured using a dynamic viscoelasticity measuring apparatus (DVE-V4 manufactured by Rheology Co., Ltd.) (sample size: length 20 mm, width 4 mm, film thickness 75 μm, temperature range -30 to 100 ° C, temperature rise) Speed 5 ° C / min, tensile mode, 10 Hz or 900 Hz, automatic static load).

(3) Cross-sectional shape of the adhesive layer

Cross-section cutting of the printing section with a microtome or razor, using Hitachi High- A microscope (TM-1000) manufactured by Technologies performs a cross-sectional observation of the section to measure thickness, size, shape, and the like.

(4) Evaluation results

(4.1) Embodiment 1

In the sample of Example 1, the adhesive layer 1 was formed by screen printing.

The breaking strength and elongation at break of the adhesive layer 1 after the drying step (before the bonding step) were measured, and as a result, the breaking strength was 5.0 MPa, and the breaking elongation was 15%.

The elastic modulus of the adhesive layer after the drying step (before the bonding step) was 2500 MPa at 25 ° C / 10 Hz and 8000 MPa at 25 ° C / 900 Hz.

The adhesive layer 1 after the drying step (before the bonding step) was cut (longitudinal) and the cross section of the outer peripheral portion was observed under a microscope. As a result, it was found that the outer peripheral side edge portion was gently inclined. Specifically, the actual printing diameter was 321 mm with respect to the target printing diameter of 320 mm in the case where the adhesive layer 1 was viewed in plan.

(4.2) Example 9

In the sample of Example 9, the adhesive layer 9 was formed by gravure printing.

The breaking strength and elongation at break of the adhesive layer 9 after the drying step (before the bonding step) were measured, and as a result, the breaking strength was 3 MPa, and the breaking elongation was 15%.

The elastic modulus of the adhesive layer 9 after the drying step (before the bonding step) was 2500 MPa at 25 ° C/10 Hz and 8000 MPa at 25 ° C / 900 Hz.

The adhesive layer 9 after the drying step (before the bonding step) was cut (longitudinal) and the cross section of the outer peripheral portion was observed under a microscope, and as a result, it was found that the outer peripheral side edge portion was gently inclined. Specifically, the actual printing diameter was 321 mm with respect to the target printing diameter of 320 mm in the case where the adhesive layer 9 was viewed in plan.

(4.3) Other

Manufacturing conditions and characteristics of the adhesive layer containing the samples of the above Examples 1 and 9 (evaluation knot The results are shown in Table 1.

In addition, in Table 1, regarding the evaluation of "thickness accuracy", in the samples of Examples 1 to 4, 6 to 8, and Comparative Example 5 in which an adhesive layer was formed by screen printing, the thickness of the adhesive layer was designed. 20 μm, in the samples of Examples 9 to 10, 12 and Comparative Example 11 in which an adhesive layer was formed by gravure printing, the thickness of the adhesive layer was designed to be 5 μm, and the thickness of the actual adhesive layer was relative to the design value. When the target value is within the range of ±1.5 μm, the evaluation is "○ (good)", and when it is outside the range, it is described as "-".

[to sum up]

In the samples of Examples 1 to 4 and 6 to 8 in which the adhesive layer was formed by screen printing, a good semiconductor wafer processing tape can be obtained by a simple procedure.

In particular, in Examples 1 to 4, the viscosity of the adhesive was 0.05 Pa ‧ or more and 5 Pa ‧ s or less, and the temperature in the printing step was 10 ° C or less, so that the number of defects caused by the clogging of the screen was hardly observed. It can be confirmed that the printing yield is improved.

Further, in Examples 1 to 4 and 6 to 8, the thickness of the adhesive layer was also suppressed to be within the range of ±1.5 μm in terms of the solid layer.

Further, in Examples 1 to 4 and 6 to 8, the amount of the adhesive used was drastically reduced to about 50% with respect to the conventional method (application by a coater).

In Example 6, although the viscosity of the adhesive exceeded 5 Pa‧s, printing was possible. In the sixth embodiment, when the outer peripheral portion of the adhesive layer is cut in cross section, the shape of the microscopic convex portion (in the range of about 1 mm from the outer peripheral end, and the thickness in contact with the wafer is about 20%) is exhibited. In the sixth embodiment, the thickness is not uniform in the vicinity of the outer peripheral portion. Therefore, it is preferable to prevent the semiconductor wafer from being bonded as much as possible, and the thickness accuracy is preferably within a target value of ±1.5 μm with respect to the inner side of about 1 mm from the outer circumference. It can be judged that it can be used as an adhesive layer of a semiconductor wafer.

With respect to the samples, in Comparative Example 5, since the viscosity of the adhesive was less than 0.05 Pa s, the shape of the printed portion was significantly smaller toward the edge side, and the shape was collapsed, and the adhesive was applied. When the screen was placed on the screen, dripping liquid was generated, so that it was difficult to perform good printing (it was judged that screen printing could not be performed).

On the other hand, regarding the samples of Examples 9 to 10 and 12 in which the adhesive layer was formed by gravure printing, printing of a good adhesive layer was obtained in all the samples.

In Examples 9 to 10 and 12, similarly to screen printing, the amount of the adhesive used was significantly reduced to about 50% with respect to the conventional method (application by a coater).

With respect to these samples, in Comparative Example 11, the viscosity of the adhesive was as large as 11 Pa‧s, and the printed surface was found to be missing, and good printing could not be performed (it was judged that gravure printing could not be performed).

[Embodiment 2]

[Production of sample]

(1) Examples 13 to 17

In the same manner as in the production of the sample of Example 1, an adhesive was formed on a PET film as a film for support by a roll-to-roll type monolithic screen printing method to form an adhesive layer.

In this printing step, as shown in Table 2, the manufacturing conditions were set by changing the viscosity of the adhesive and the printing thickness (design thickness) after drying for each sample. The subsequent agent was the same as the composition of the adhesive 1, and only the blending amount of methyl ethyl ketone was adjusted to control the viscosity.

Thereafter, each of the drying step and the bonding step was carried out in the same manner as in the production of the sample of Example 1, to produce a semiconductor wafer processing belt.

(2) Examples 18 to 19

In the same manner as in the production of the sample of Example 9, an adhesive was printed by a gravure printing method on a PET film as a film for support to form an adhesive layer.

In this printing step, as shown in Table 2, the manufacturing conditions were also set by changing the viscosity of the adhesive and the printed thickness (design thickness) after drying for each sample. The subsequent agent was the same as the component of the adhesive 2, and only the blending amount of methyl ethyl ketone was adjusted to control the viscosity.

Thereafter, each of the drying step and the bonding step was carried out in the same manner as in the production of the sample of Example 9, to produce a semiconductor wafer processing belt.

(3) Comparative Example 20~22

An adhesive layer was formed using the same material as the sample of Example 1.

Specifically, an adhesive layer was temporarily applied to the entire surface of a PET film (thickness: 25 μm) as a film for support, and an adhesive was temporarily formed, followed by a diameter of The adhesive layer was pre-cut at a distance of 320 mm and a pitch of 60 mm.

In this step, as shown in Table 2, the manufacturing conditions were also set by changing the viscosity of the adhesive and the printed thickness (design thickness) after drying for each sample. The composition of the subsequent agent and the adhesive 1 Similarly, only the blending amount of methyl ethyl ketone was adjusted to control the viscosity.

Thereafter, each of the drying step and the bonding step was carried out in the same manner as in the production of the sample of Example 1, to produce a semiconductor wafer processing belt.

[Evaluation of sample (adhesive layer)]

The samples of Examples 13 to 17, 18 to 19, and Comparative Examples 20 to 22 were section cut by a microtome or a razor, and the inclined portion of the adhesive layer was sectioned by a microscope (TM-1000) manufactured by Hitachi High-Technologies. Observe and measure the thickness and shape.

Here, when the cross-sectional observation is performed, as shown in FIG. 11, the thickness (the distance in the vertical direction) of the inclined portion 12a is determined with respect to the inclined portion 12a of the adhesive layer 12 when the outer peripheral portion of the adhesive layer 12 is cut out. When it is set to "t", the distance in the horizontal direction of the inclined portion 12a is "ΔR", and each distance is measured, and the parameter indicating the shape of the inclined portion of the adhesive layer is "ΔR/t". And calculate this parameter.

The measured values of the thickness t of the inclined portion 12a and the distance ΔR in the horizontal direction and the calculated values of the shape parameter ΔR/t are shown in Table 2.

[to sum up]

Samples of Examples 13 to 17, 18 to 19 in which an adhesive layer was formed by screen printing or gravure printing, and samples of Comparative Examples 20 to 22 which were subjected to coating and pre-cutting to form an adhesive layer, When the inclined portion of the adhesive layer of the sample was observed in cross section, it was found from the comparison results that in the samples of Examples 13 to 17 and 18 to 19, the thickness t of the adhesive layer was in the range of 2 to 150 μm, and the shape parameter was obtained. The numerical range of ΔR/t substantially satisfies the condition of the following formula (1).

0.4≦△R/t≦100...(1)

In the samples of Examples 13 to 17 and 18 to 19, the adhesion between the adhesive layer and the adhesive layer was good, and the generation of voids was largely suppressed, and it was found that the conditions satisfying the formula (1) were useful.

With respect to the samples, in the samples of Comparative Examples 20 to 22, the conditions of the formula (1) were not satisfied, and the adhesion between the adhesive layer and the adhesive layer was inferior to those of the samples of Examples 13 to 17, and 18 to 19.

Further, in the samples of Examples 13 to 17 and 18 to 19, since the film for support was not damaged by the cutting (see Fig. 10), foreign matter such as film dust remained in the slit portion which was caused by the dicing blade. In this case, the quality of the product can be improved.

10‧‧‧Semiconductor wafer processing tape

11‧‧‧Support film (first resin film)

12‧‧‧ adhesive layer

12a‧‧‧ inclined section

13‧‧‧Adhesive layer

14‧‧‧Base film (second resin film)

15‧‧‧Cutting Tape

Claims (6)

A semiconductor wafer processing belt manufactured by a method for manufacturing a semiconductor wafer processing belt, the manufacturing method comprising the following steps: a printing step by using a semiconductor wafer on a resin film a method of screen printing or gravure bonding adhesive to form an adhesive layer in a manner of substantially the same or larger; and a drying step of drying the adhesive layer; the adhesive layer after the drying step The outer peripheral portion is gently inclined at the time of cross-sectional view, and when the thickness of the inclined portion is t and the distance in the horizontal direction is ΔR, the condition of the formula (1) is satisfied, 0.4 ≦ ΔR/ T≦100...(1). A semiconductor wafer processing belt manufactured by a method for manufacturing a semiconductor wafer processing belt, the manufacturing method comprising the steps of: a printing step by using a semiconductor crystal on the first resin film a method in which the size of the circle is substantially the same or larger, or an adhesive for gravure or gravure printing, to form an adhesive layer; a drying step for drying the adhesive layer; and a bonding step, which is a pair The first resin film is formed with a surface of the adhesive layer, and a dicing tape formed of an adhesive layer made of a die-cutting adhesive is formed on the second resin film, and the adhesive layer and the adhesive are formed. The layers are brought into contact with each other; the outer peripheral portion of the adhesive layer after the drying step is gently inclined in the cross-sectional view, and the thickness of the inclined portion is set to t, and the distance in the horizontal direction is set to ΔR In the case, the condition of the formula (1) is satisfied, 0.4 ≦ ΔR / t ≦ 100 (1). A method of manufacturing a semiconductor wafer processing tape, comprising the steps of: printing a screen printing or gravure by using a film on a first resin film substantially the same as or larger than a size of a semiconductor wafer Printing an adhesive with an adhesive to form an adhesive layer; a drying step of drying the adhesive layer; and a bonding step of forming a surface of the first resin film on the adhesive layer, and forming a paste for crystal cutting on the second resin film The dicing tape of the adhesive layer is bonded in such a manner that the adhesive layer is in contact with the adhesive layer; in the printing step, the outer peripheral portion of the adhesive layer after the drying step is cut in cross section When the thickness of the inclined portion is t and the distance in the horizontal direction is ΔR, the condition of the formula (1) is satisfied, 0.4 ≦ ΔR / t ≦ 100 (1) . . A method of manufacturing a semiconductor wafer processing tape according to claim 3, wherein in the printing step, the adhesive layer is formed into a shape corresponding to a size of the semiconductor wafer. The method of manufacturing a semiconductor wafer processing tape according to the third or fourth aspect of the invention, wherein in the printing step, the adhesive for die bonding is printed so as to cover at least all of the wafers divided from the semiconductor wafer. The method for producing a semiconductor wafer processing tape according to claim 3, wherein in the bonding step, the following is used as the dicing tape, that is, by the ring on the second resin film The size of the frame is substantially the same or larger than that of the die-cutting or gravure printing of the die-cutting adhesive to form the adhesive layer.