JP2024072584A - Manufacturing method of semiconductor device - Google Patents

Abstract

To provide a manufacturing method of a semiconductor device, which suppresses malfunction when picking up an adhesive agent layer containing an ultraviolet light curable pressure sensitive adhesive agent and a semiconductor chip with an adhesive agent layer strip when using an integration type film having the adhesive agent layer.SOLUTION: A manufacturing method of a semiconductor device, comprises: a step of preparing a lamination body 10 having an integration type film 9 that contains a base material layer 1, an adhesive agent layer 3 containing an ultraviolet light curable pressure sensitive adhesive agent, and an adhesive agent layer 5; and a plurality of semiconductor chips SC provided onto the adhesive agent layer; a step of forming an adhesive agent curable material layer 11 by radiating an ultraviolet against the adhesive agent layer; and a step of radiating a laser against the adhesive agent layer via a gap between the plurality of semiconductor chips, and manufacturing a semiconductor chip with an adhesive agent layer strip by dividing the adhesive agent layer.SELECTED DRAWING: Figure 1

Description

This disclosure relates to a method for manufacturing a semiconductor device.

Semiconductor devices are generally manufactured through the following process. First, the semiconductor wafer is subjected to a backgrinding process, and then a dicing process is carried out with an adhesive film for dicing attached. Next, an ultraviolet irradiation process, a pick-up process, a die bonding process, etc. are carried out.

In the manufacturing process of semiconductor devices, a film called a dicing/die bonding integrated film is used. This film has a structure in which a base layer, an adhesive layer, and an adhesive layer are laminated in this order, and is used, for example, as follows. First, the adhesive layer side is attached to a semiconductor wafer, and the semiconductor wafer is diced while being fixed with a dicing ring (dicing process). As a result, the semiconductor wafer and the adhesive layer are simultaneously singulated into a plurality of semiconductor chips and a plurality of adhesive layer pieces. Next, if the adhesive layer contains an ultraviolet-curing adhesive, the adhesive layer is irradiated with ultraviolet light to reduce the adhesive force of the adhesive layer to the adhesive layer (ultraviolet light irradiation process), and the semiconductor chip is picked up together with the adhesive layer piece from the adhesive layer (pickup process). After that, the semiconductor chip is pressure-bonded to a substrate or the like via the adhesive layer piece (die bonding process), and the semiconductor device is manufactured. The laminate consisting of the semiconductor chip obtained through the dicing process and the adhesive layer piece attached thereto is called a semiconductor chip with adhesive layer piece.

In recent years, semiconductor chips have been made thinner as semiconductor packages have become smaller and thinner, and have become more highly dense and multifunctional. In the case of thinning semiconductor chips, defects during processing, such as damage to semiconductor wafers during processing, tend to occur more easily, and the manufacturing process of semiconductor devices is also changing from the conventional one. As a process for suppressing defects during thinning of semiconductor chips, for example, the DBG (Dicing Before Grinding) process is known. The DBG process is a process in which a backgrinding process is performed after a dicing process, unlike the conventional process in which a backgrinding process is performed after a backgrinding process. More specifically, a groove is formed on the circuit formation surface of a semiconductor wafer along a dicing line by half-cut dicing, and then the back surface of the semiconductor wafer opposite to the circuit formation surface is ground (backgrinded) to a depth at least reaching the groove, thereby simultaneously thinning and dividing the semiconductor wafer (see, for example, Patent Documents 1 and 2). According to such a process, it is possible to manufacture a thin semiconductor chip while suppressing defects during processing.

International Publication No. 2016/189986 JP 2011-181951 A

However, when the inventors of the present invention investigated the manufacture of semiconductor devices by applying an integrated dicing and die bonding film having an adhesive layer containing an ultraviolet-curable adhesive and an adhesive layer to multiple semiconductor chips obtained by the DBG process, they found that the pick-up ability of the semiconductor chips with the adhesive layer pieces may be reduced.

The present disclosure provides a method for manufacturing a semiconductor device that includes a step of producing a semiconductor chip with an adhesive layer piece using a dicing/die bonding integrated film having an adhesive layer containing an ultraviolet-curable adhesive and an adhesive layer, and that can suppress problems when picking up the semiconductor chip with the adhesive layer piece.

As described above, in the manufacture of semiconductor devices, the semiconductor wafer and adhesive layer are typically singulated simultaneously into multiple semiconductor chips and multiple adhesive layer pieces to produce semiconductor chips with adhesive layer pieces. Next, the adhesive layer is irradiated with ultraviolet light to reduce the adhesive strength of the adhesive layer to the adhesive layer, and the semiconductor chips with the adhesive layer pieces are picked up from the adhesive layer.

On the other hand, when manufacturing a semiconductor device using multiple semiconductor chips obtained by the DBG process, a separate process for singulating the adhesive layer is required. In singulating the adhesive layer, singulation is often performed using a laser. However, according to the study by the present inventors, it was found that by using a laser to singulate the adhesive layer, the adhesive layer is also irradiated with the laser, and cuts are generated in the adhesive layer along the laser cut line in the depth direction, and the constituent components of the adhesive layer are scattered. When the constituent components of the adhesive layer are scattered, the constituent components of the adhesive layer adhere to the side of the adhesive layer, and even if the adhesive layer is irradiated with ultraviolet light, the adhesive strength is not sufficiently reduced, and the peel strength at the edge portion between the adhesive layer piece and the adhesive layer of the semiconductor chip with the adhesive layer piece (hereinafter sometimes referred to as "edge peel strength") remains high, and as a result, the pick-up ability of the semiconductor chip with the adhesive layer piece may be insufficient. The inventors conducted further research to prevent this phenomenon and discovered that if the adhesive layer containing the ultraviolet-curable adhesive is already in a cured state when the adhesive layer is singulated by laser irradiation, scattering of the components of the adhesive layer can be prevented, leading to the completion of the disclosed invention.

The present disclosure provides a method for manufacturing a semiconductor device according to [1] to [4].
[1] A method for manufacturing a semiconductor device, comprising the steps of: preparing a laminate including a dicing/die bonding integrated film having, in this order, a base layer, an adhesive layer containing an ultraviolet-curable adhesive, and an adhesive layer; and a plurality of semiconductor chips formed by dicing a semiconductor wafer, the plurality of semiconductor chips being provided on the adhesive layer of the dicing/die bonding integrated film; irradiating the adhesive layer of the laminate with ultraviolet light to form an adhesive cured material layer containing a cured product of the ultraviolet-curable adhesive; and irradiating the adhesive layer with a laser through gaps between the plurality of semiconductor chips to produce semiconductor chips with adhesive layer pieces.
[2] The method for manufacturing a semiconductor device described in [1], wherein the laminate is a laminate produced by a method including the steps of: forming grooves along dicing lines on the circuit formation surface of the semiconductor wafer; grinding the back surface of the semiconductor wafer opposite the circuit formation surface on which the grooves are formed to a depth that reaches at least the grooves to produce the multiple semiconductor chips; and attaching the adhesive layer of the dicing/die bonding integrated film to the back surfaces of the multiple semiconductor chips.
[3] The method for manufacturing a semiconductor device according to [1] or [2], wherein in the dicing/die bonding integrated film, the adhesive strength of the pressure-sensitive adhesive layer to the adhesive layer is 0.50 N/25 mm or more, as measured under conditions of a temperature of 25±3°C, a humidity of 55±5%, and a peeling speed of 300 mm/min using a T-peel method.
[4] The method for manufacturing a semiconductor device according to [3], wherein, in the dicing/die bonding integrated film, after the pressure-sensitive adhesive layer is irradiated with ultraviolet light having an illuminance of 80 mW/ ^cm2 and an exposure dose of 130 mJ/ ^cm2 to harden the pressure-sensitive adhesive layer, the adhesive strength of the pressure-sensitive adhesive cured layer to the adhesive layer is 0.30 N/25 mm or less, as measured under conditions of a temperature of 25±3°C, a humidity of 55±5%, and a T-shaped peel speed of 300 mm/min.

According to the present disclosure, in a method for manufacturing a semiconductor device that includes a step of producing a semiconductor chip with an adhesive layer piece using a dicing/die bonding integrated film having an adhesive layer and an adhesive layer that includes an ultraviolet-curable adhesive, a method for manufacturing a semiconductor device that can suppress problems when picking up the semiconductor chip with the adhesive layer piece is provided.

FIG. 1 is a schematic cross-sectional view for explaining one embodiment of a method for manufacturing a semiconductor device, and FIG. 1(a), FIG. 1(b), and FIG. 1(c) are diagrams showing each process. 2A to 2D are schematic cross-sectional views for explaining one embodiment of a method for manufacturing a semiconductor device, and FIGS. 2A to 2D are views showing each process. FIG. 3 is a schematic cross-sectional view for explaining one embodiment of a method for producing a laminate, and FIG. 3( a ), FIG. 3 ( b ), FIG. 3 ( c ), FIG. 3 ( d ), FIG. 3 ( e ), and FIG. 3 ( f ) are diagrams showing each step.

The present embodiment will be described in detail below with reference to the drawings. However, the present disclosure is not limited to the following embodiment. In the following embodiment, the components (including steps, etc.) are not essential unless otherwise specified. The same reference numerals are used for the same or equivalent parts, and duplicated explanations are omitted. Furthermore, unless otherwise specified, the positional relationships such as up, down, left, right, etc. are based on the positional relationships shown in the drawings. The sizes of the components in each figure are conceptual, and the relative relationships in size between the components are not limited to those shown in each figure.

The same applies to the numerical values and their ranges in this disclosure, and they do not limit this disclosure. In this specification, a numerical range indicated using "~" indicates a range that includes the numerical values before and after "~" as the minimum and maximum values, respectively. In the numerical ranges described in stages in this specification, the upper limit or lower limit value described in one numerical range may be replaced with the upper limit or lower limit value of another numerical range described in stages. In addition, in the numerical ranges described in this specification, the upper limit or lower limit value of the numerical range may be replaced with the value shown in the examples. In addition, the upper limit and lower limit values described individually can be combined in any way.

In this specification, the term "layer" includes structures that are formed over the entire surface when viewed in a plan view, as well as structures that are formed on only a portion of the surface. In this specification, the term "process" includes not only independent processes, but also processes that cannot be clearly distinguished from other processes, as long as the intended effect of the process is achieved.

In this specification, "(meth)acrylate" means at least one of acrylate and the corresponding methacrylate. The same applies to other similar expressions such as "(meth)acryloyl" and "(meth)acrylic acid". In addition, "(poly)" means both the case with and without the "poly" prefix.

"A or B" means that either A or B is contained, or both are contained. In addition, unless otherwise specified, the materials exemplified below may be used alone or in combination of two or more. When multiple substances corresponding to each component are present in the composition, the content of each component in the composition means the total amount of the multiple substances present in the composition, unless otherwise specified.

[Method of Manufacturing Semiconductor Device]
The manufacturing method of the semiconductor device of one embodiment includes the steps of preparing a laminate (step (A)) including a dicing/die bonding integrated film (hereinafter sometimes referred to as an "integrated film") having a base layer, an adhesive layer containing an ultraviolet-curable adhesive, and an adhesive layer in this order, and a plurality of semiconductor chips formed by dividing a semiconductor wafer and provided on the adhesive layer of the integrated film; irradiating the adhesive layer of the laminate with ultraviolet light to form an adhesive cured layer containing a cured product of the ultraviolet-curable adhesive (step (B)); and irradiating the adhesive layer with a laser through the gaps between the plurality of semiconductor chips to divide the adhesive layer into individual pieces, thereby producing a semiconductor chip with an adhesive layer piece (step (C)). Figures 1 and 2 are schematic cross-sectional views for explaining one embodiment of the manufacturing method of the semiconductor device.

<Step (A)>
In this process, a laminate 10 is prepared, which includes an integrated film 9 having a base layer 1, an adhesive layer 3 containing an ultraviolet-curable adhesive, and an adhesive layer 5 in this order, and a plurality of semiconductor chips SC formed by dividing a semiconductor wafer and provided on the adhesive layer 5 of the integrated film 9 (see FIG. 1(a)). In the laminate 10, a dicing ring DR for fixing the semiconductor chips SC may be attached to the surface of the adhesive layer 3 opposite to the base layer 1. A laminate film having a base layer and an adhesive layer provided on the base layer is called a dicing film.

(Base layer)
A known polymer sheet or film can be used for the substrate layer 1. Specific examples of the substrate layer 1 include polyolefins such as crystalline polypropylene, amorphous polypropylene, high density polyethylene, medium density polyethylene, low density polyethylene, very low density polyethylene, low density linear polyethylene, polybutene, and polymethylpentene, ethylene-vinyl acetate copolymers, ionomer resins, ethylene-(meth)acrylic acid copolymers, ethylene-(meth)acrylic acid ester (random, alternating) copolymers, ethylene-butene copolymers, ethylene-hexene copolymers, polyurethane, polyesters such as polyethylene terephthalate and polyethylene naphthalate, polycarbonates, polyimides, polyether ether ketones, polyimides, polyetherimides, polyamides, wholly aromatic polyamides, polyphenylsulfide, aramids (paper), glass, glass cloths, fluororesins, polyvinyl chloride, polyvinylidene chloride, cellulose-based resins, silicone resins, mixtures of these with plasticizers, and cured products crosslinked by electron beam irradiation.

The substrate layer 1 may have a surface mainly composed of at least one resin selected from the group consisting of polyethylene, polypropylene, polyethylene-polypropylene random copolymer, and polyethylene-polypropylene block copolymer, and this surface may be in contact with the adhesive layer 3. These resins can be good substrates in terms of properties such as Young's modulus, stress relaxation, and melting point, as well as cost and waste material recycling after use. The substrate layer 1 may be a single layer, or may have a multilayer structure in which layers made of different materials are laminated, as necessary. In order to control the adhesion to the adhesive layer 3, the substrate layer 1 may have a surface roughening treatment such as matte treatment or corona treatment.

The thickness of the substrate layer 1 may be, for example, 10 to 200 μm or 20 to 170 μm.

(Adhesive Layer)
The adhesive layer 3 contains an ultraviolet-curable adhesive. In one embodiment, the ultraviolet-curable adhesive may contain a (meth)acrylic resin having a chain-polymerizable functional group (hereinafter, may be referred to as "(meth)acrylic resin (A)") and a photopolymerization initiator. At least a portion of the (meth)acrylic resin (A) may be crosslinked with a crosslinking agent.

The (meth)acrylic resin (A) has a chain-polymerizable functional group (hereinafter, sometimes referred to as "functional group (A)"). The functional group (A) may be at least one selected from an acryloyl group and a methacryloyl group.

The content of the functional group (A) in the (meth)acrylic resin (A) may be, for example, 0.1 to 1.2 mmol/g, or 0.3 to 1.0 mmol/g, or 0.5 to 0.8 mmol/g.

The (meth)acrylic resin (A) can be obtained by reacting a (meth)acrylic resin (hereinafter sometimes referred to as "(meth)acrylic resin (B)") having at least one functional group (hereinafter sometimes referred to as "functional group (B)") selected from a hydroxyl group, a glycidyl group (epoxy group), an amino group, etc., with a compound for introducing the functional group (A) described below (hereinafter sometimes referred to as "functional group-introducing compound"). The (meth)acrylic resin (A) can also be said to be a reaction product of the (meth)acrylic resin (B) and the functional group-introducing compound.

The (meth)acrylic resin (B) can be obtained by synthesis using a known method. Examples of synthesis methods include solution polymerization, suspension polymerization, emulsion polymerization, bulk polymerization, precipitation polymerization, gas phase polymerization, plasma polymerization, and supercritical polymerization. In addition to radical polymerization, cationic polymerization, anionic polymerization, living radical polymerization, living cationic polymerization, living anionic polymerization, coordination polymerization, and immortal polymerization, as well as ATRP (atom transfer radical polymerization) and RAFT (reversible addition-fragmentation chain transfer polymerization), are examples of types of polymerization reactions. Among these, synthesis by radical polymerization using a solution polymerization method has the advantages of being economical, having a high reaction rate, being easy to control polymerization, and being able to use the resin solution obtained by polymerization as it is for blending.

Here, the synthesis method of (meth)acrylic resin (B) will be described in detail using as an example a method for obtaining (meth)acrylic resin (B) by radical polymerization using a solution polymerization method.

The monomer used in synthesizing the (meth)acrylic resin (B) is not particularly limited as long as it has one (meth)acryloyl group in one molecule. Specific examples include methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, isobutyl (meth)acrylate, tert-butyl (meth)acrylate, butoxyethyl (meth)acrylate, isoamyl (meth)acrylate, hexyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, heptyl (meth)acrylate, octylheptyl (meth)acrylate, nonyl (meth)acrylate, decyl (meth)acrylate, undecyl (meth)acrylate, lauryl (meth)acrylate, tetramethyl ... Aliphatic (meth)acrylates such as tridecyl (meth)acrylate, tetradecyl (meth)acrylate, pentadecyl (meth)acrylate, hexadecyl (meth)acrylate, stearyl (meth)acrylate, behenyl (meth)acrylate, methoxypolyethylene glycol (meth)acrylate, ethoxypolyethylene glycol (meth)acrylate, methoxypolypropylene glycol (meth)acrylate, ethoxypolypropylene glycol (meth)acrylate, and mono(2-(meth)acryloyloxyethyl)succinate; alicyclic (meth)acrylates such as butyl (meth)acrylate, cyclohexyl (meth)acrylate, cyclopentyl (meth)acrylate, dicyclopentanyl (meth)acrylate, dicyclopentenyl (meth)acrylate, isobornyl (meth)acrylate, mono(2-(meth)acryloyloxyethyl)tetrahydrophthalate, and mono(2-(meth)acryloyloxyethyl)hexahydrophthalate; benzyl (meth)acrylate, phenyl (meth)acrylate, o-biphenyl (meth)acrylate, 1-naphthyl (meth)acrylate, acrylate, 2-naphthyl (meth)acrylate, phenoxyethyl (meth)acrylate, p-cumylphenoxyethyl (meth)acrylate, o-phenylphenoxyethyl (meth)acrylate, 1-naphthoxyethyl (meth)acrylate, 2-naphthoxyethyl (meth)acrylate, phenoxypolyethylene glycol (meth)acrylate, nonylphenoxypolyethylene glycol (meth)acrylate, phenoxypolypropylene glycol (meth)acrylate, 2-hydroxy-3-phenoxypropyl (meth)acrylate, 2-hydroxy aromatic (meth)acrylates such as 2-hydroxy-3-(o-phenylphenoxy)propyl (meth)acrylate, 2-hydroxy-3-(1-naphthoxy)propyl (meth)acrylate, and 2-hydroxy-3-(2-naphthoxy)propyl (meth)acrylate; heterocyclic (meth)acrylates such as 2-tetrahydrofurfuryl (meth)acrylate, N-(meth)acryloyloxyethylhexahydrophthalimide, and 2-(meth)acryloyloxyethyl-N-carbazole; caprolactone-modified versions of these; and ω-carboxy-polycaprolactone mono(meth)acrylate. ) acrylate, glycidyl (meth)acrylate, α-ethyl glycidyl (meth)acrylate, α-propyl glycidyl (meth)acrylate, α-butyl glycidyl (meth)acrylate, 2-methyl glycidyl (meth)acrylate, 2-ethyl glycidyl (meth)acrylate, 2-propyl glycidyl (meth)acrylate, 3,4-epoxybutyl (meth)acrylate, 3,4-epoxyheptyl (meth)acrylate, α-ethyl-6,7-epoxyheptyl (meth)acrylate, 3,4-epoxycyclohexylmethyl (meth)acrylate compounds having an ethylenically unsaturated group and an epoxy group, such as (2-ethyl-2-oxetanyl)methyl (meth)acrylate, (2-methyl-2-oxetanyl)methyl (meth)acrylate, 2-(2-ethyl-2-oxetanyl)ethyl (meth)acrylate, 2-(2-methyl-2-oxetanyl)ethyl (meth)acrylate, 3-(2-ethyl-2-oxetanyl)propyl (meth)acrylate, 3-(2-methyl ... Examples of suitable compounds include compounds having an ethylenically unsaturated group and an oxetanyl group, such as 2-(meth)acryloxyethyl isocyanate, and compounds having an ethylenically unsaturated group and an isocyanate group, such as 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 3-chloro-2-hydroxypropyl (meth)acrylate, and 2-hydroxybutyl (meth)acrylate. The desired (meth)acrylic resin (B) can be synthesized by appropriately combining these.

The (meth)acrylic resin (B) has at least one functional group (B) selected from a hydroxyl group, a glycidyl group (epoxy group), an amino group, etc., as a reaction point with a functional group-introducing compound or a crosslinking agent described below.

Examples of monomers for synthesizing the (meth)acrylic resin (B) having a hydroxyl group include compounds having an ethylenically unsaturated group and a hydroxyl group, such as 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 3-chloro-2-hydroxypropyl (meth)acrylate, and 2-hydroxybutyl (meth)acrylate.

Examples of monomers for synthesizing the (meth)acrylic resin (B) having a glycidyl group include compounds having an ethylenically unsaturated group and an epoxy group, such as glycidyl (meth)acrylate, α-ethyl glycidyl (meth)acrylate, α-propyl glycidyl (meth)acrylate, α-butyl glycidyl (meth)acrylate, 2-methyl glycidyl (meth)acrylate, 2-ethyl glycidyl (meth)acrylate, 2-propyl glycidyl (meth)acrylate, 3,4-epoxybutyl (meth)acrylate, 3,4-epoxyheptyl (meth)acrylate, α-ethyl-6,7-epoxyheptyl (meth)acrylate, 3,4-epoxycyclohexylmethyl (meth)acrylate, o-vinylbenzyl glycidyl ether, m-vinylbenzyl glycidyl ether, and p-vinylbenzyl glycidyl ether.

The (meth)acrylic resin (A) has a functional group (A) such as an acryloyl group or a methacryloyl group. The functional group (A) can be introduced into the (meth)acrylic resin (B) by reacting the (meth)acrylic resin (B) having at least one functional group (B) selected from, for example, a hydroxyl group, a glycidyl group (epoxy group), an amino group, etc., with a functional group-introducing compound. Specific examples of functional group-introducing compounds include 2-methacryloyloxyethyl isocyanate, α,α-dimethyl-4-isopropenylbenzyl isocyanate, allyl isocyanate, 1,1-(bisacryloxymethyl)ethyl isocyanate; acryloyl monoisocyanate compounds obtained by reacting a diisocyanate compound or a polyisocyanate compound with hydroxyethyl (meth)acrylate or 4-hydroxybutylethyl (meth)acrylate; and acryloyl monoisocyanate compounds obtained by reacting a diisocyanate compound or a polyisocyanate compound with a polyol compound and hydroxyethyl (meth)acrylate. Among these, the functional group-introducing compound may be 2-methacryloxyethyl isocyanate.

The (meth)acrylic resin (A) may have at least one functional group (B) selected from a hydroxyl group, a glycidyl group (epoxy group), an amino group, etc., derived from the (meth)acrylic resin (B) as a reactive point, and some of the reactive points may be crosslinked with a crosslinking agent. In other words, at least a portion of the (meth)acrylic resin (A) may be crosslinked with a crosslinking agent. The ultraviolet-curable adhesive may contain the (meth)acrylic resin (A) that may be crosslinked with a crosslinking agent.

The crosslinking agent is used, for example, for the purpose of controlling the storage modulus and/or adhesion of the adhesive layer. The crosslinking agent may be any compound having, in one molecule, two or more functional groups (hereinafter sometimes referred to as "functional groups (C)") that can react with at least one functional group (B) selected from a hydroxyl group, a glycidyl group (epoxy group), an amino group, etc., derived from the (meth)acrylic resin (B) that may remain in the (meth)acrylic resin (A). Examples of bonds formed by the reaction of the (meth)acrylic resin (A) with the crosslinking agent include ester bonds, ether bonds, amide bonds, imide bonds, urethane bonds, and urea bonds.

The functional group (C) in the crosslinking agent may be an isocyanate group. That is, the crosslinking agent may be, for example, a polyfunctional isocyanate having two or more isocyanate groups in one molecule. When such a polyfunctional isocyanate is used, it can easily react with the functional group (B) derived from the (meth)acrylic resin (B) that may remain in the (meth)acrylic resin (A), forming a strong crosslinked structure.

Examples of polyfunctional isocyanates having two or more isocyanate groups in one molecule include isocyanate compounds such as 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diisocyanate, 1,4-xylylene diisocyanate, diphenylmethane-4,4'-diisocyanate, diphenylmethane-2,4'-diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane-4,4'-diisocyanate, dicyclohexylmethane-2,4'-diisocyanate, and lysine isocyanate.

The crosslinking agent may be a reaction product (isocyanate group-containing oligomer) between a polyfunctional isocyanate and a polyhydric alcohol having two or more hydroxyl groups in one molecule. Examples of polyhydric alcohols having two or more hydroxyl groups in one molecule include ethylene glycol, propylene glycol, butylene glycol, 1,6-hexanediol, 1,8-octanediol, 1,9-nonanediol, 1,10-decanediol, 1,11-undecanediol, 1,12-dodecanediol, glycerin, trimethylolpropane, pentaerythritol, dipentaerythritol, 1,4-cyclohexanediol, and 1,3-cyclohexanediol.

Among these, the crosslinking agent may be a reaction product (isocyanate group-containing oligomer) of a polyfunctional isocyanate having two or more isocyanate groups in one molecule and a polyhydric alcohol having three or more hydroxyl groups in one molecule. By using such an isocyanate group-containing oligomer as a crosslinking agent, the adhesive layer 3 forms a dense crosslinked structure, which tends to suppress adhesion of the adhesive to the adhesive layer 5 during the pick-up process.

The content of the crosslinking agent when reacting the (meth)acrylic resin (A) with the crosslinking agent can be appropriately set according to the cohesive strength, breaking elongation, adhesion to the adhesive layer, etc. required for the adhesive layer 3. The content of the crosslinking agent may be, for example, 0.1 to 10 parts by mass, 0.2 to 7 parts by mass, or 0.3 to 5 parts by mass per 100 parts by mass of the total amount of the (meth)acrylic resin (A).

The (meth)acrylic resin (A) may be the main component of the ultraviolet-curable adhesive (or adhesive layer 3). The content of the (meth)acrylic resin (A) may be 80% by mass or more, 85% by mass or more, 90% by mass or more, 95% by mass or more, or 98% by mass or more based on the total amount of the ultraviolet-curable adhesive (or adhesive layer 3).

There are no particular limitations on the photopolymerization initiator, so long as it generates an active species capable of chain polymerization when irradiated with ultraviolet light. Examples of photopolymerization initiators include photoradical polymerization initiators. Here, the term "active species capable of chain polymerization" refers to a species that initiates a polymerization reaction by reacting with a functional group capable of chain polymerization.

Examples of photoradical polymerization initiators include benzoin ketals such as 2,2-dimethoxy-1,2-diphenylethane-1-one; α-hydroxyketones such as 1-hydroxycyclohexyl phenyl ketone, 2-hydroxy-2-methyl-1-phenylpropan-1-one, and 1-[4-(2-hydroxyethoxy)phenyl]-2-hydroxy-2-methyl-1-propan-1-one; α-aminoketones such as 2-benzyl-2-dimethylamino-1-(4-morpholinophenyl)-butan-1-one and 1,2-methyl-1-[4-(methylthio)phenyl]-2-morpholinopropan-1-one; 1-[4-(phenylthio)phenyl] oxime esters such as bis(2,4,6-trimethylbenzoyl)phenylphosphine oxide, bis(2,6-dimethoxybenzoyl)-2,4,4-trimethylpentylphosphine oxide, and 2,4,6-trimethylbenzoyldiphenylphosphine oxide; 2-(o-chlorophenyl)-4,5-diphenylimidazole dimer, 2-(o-chlorophenyl)-4,5-di(methoxyphenyl)imidazole dimer, 2-(o-fluorophenyl)-4,5-diphenylimidazole dimer, 2-(o-methoxyphenyl)-4,5-diphenyl ... 2,4,5-triarylimidazole dimers such as 2-(p-methoxyphenyl)-4,5-diphenylimidazole dimer; benzophenone compounds such as benzophenone, N,N,N',N'-tetramethyl-4,4'-diaminobenzophenone, N,N,N',N'-tetraethyl-4,4'-diaminobenzophenone, and 4-methoxy-4'-dimethylaminobenzophenone; 2-ethylanthraquinone, phenanthrenequinone, 2-tert-butylanthraquinone, octamethylanthraquinone, 1,2-benzanthraquinone, 2,3-benzanthraquinone, 2-phenylanthraquinone, 2, These include quinone compounds such as 3-diphenylanthraquinone, 1-chloroanthraquinone, 2-methylanthraquinone, 1,4-naphthoquinone, 9,10-phenanthraquinone, 2-methyl-1,4-naphthoquinone, and 2,3-dimethylanthraquinone; benzoin ethers such as benzoin methyl ether, benzoin ethyl ether, and benzoin phenyl ether; benzoin compounds such as benzoin, methylbenzoin, and ethylbenzoin; benzyl compounds such as benzyl dimethyl ketal; acridine compounds such as 9-phenylacridine and 1,7-bis(9,9'-acridinylheptane); N-phenylglycine, coumarin, and the like.

The content of the photopolymerization initiator in the ultraviolet-curable adhesive may be, for example, 0.1 to 30 parts by mass, 0.3 to 10 parts by mass, or 0.5 to 5 parts by mass per 100 parts by mass of the total amount of the (meth)acrylic resin (A).

The adhesive layer 3 may contain other components. Examples of other components include resins other than (meth)acrylic resins having a chain-polymerizable functional group (acrylic monomers or oligomers, urethane monomers or oligomers, etc.), tackifiers (tackifiers, etc.), antistatic agents, fillers (organic fillers, inorganic fillers, etc.), etc.

The thickness of the adhesive layer 3 may be, for example, 1 μm or more, 2 μm or more, 3 μm or more, or 5 μm or more, and may be 100 μm or less, 50 μm or less, 20 μm or less, or 15 μm or less.

In the dicing film 7, the adhesive layer 3 is formed on the base layer 1. A known method can be used to form the adhesive layer 3. For example, a laminate of the base layer 1 and the adhesive layer 3 can be formed by a two-layer extrusion method, or a varnish of an ultraviolet-curing adhesive (varnish for forming an adhesive layer) can be prepared and applied to the surface of the base layer 1, or the adhesive layer 3 can be formed on a release-treated film and then transferred to the base layer 1.

The varnish for the ultraviolet-curing adhesive (varnish for forming the adhesive layer) may be an organic solvent capable of dissolving the ultraviolet-curing adhesive ((meth)acrylic resin (A), photopolymerization initiator, crosslinking agent, etc.) and volatilizing by heating. Specific examples of organic solvents include aromatic hydrocarbons such as toluene, xylene, mesitylene, cumene, and p-cymene; cyclic ethers such as tetrahydrofuran and 1,4-dioxane; alcohols such as methanol, ethanol, isopropanol, butanol, ethylene glycol, and propylene glycol; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, and 4-hydroxy-4-methyl-2-pentanone; esters such as methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, and γ-butyrolactone; carbonates such as ethylene carbonate and propylene carbonate; ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, Examples of the alkyl ethers include polyhydric alcohols such as propylene glycol dimethyl ether, propylene glycol diethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, diethylene glycol dimethyl ether, and diethylene glycol diethyl ether; polyhydric alcohol alkyl ether acetates such as ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether acetate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, diethylene glycol monomethyl ether acetate, and diethylene glycol monoethyl ether acetate; and amides such as N,N-dimethylformamide, N,N-dimethylacetamide, and N-methyl-2-pyrrolidone.

Among these, the organic solvent may be at least one selected from the group consisting of toluene, methanol, ethanol, isopropanol, acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, methyl acetate, ethyl acetate, butyl acetate, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, diethylene glycol dimethyl ether, ethylene glycol monomethyl ether acetate, propylene glycol monomethyl ether acetate, and N,N-dimethylacetamide, from the viewpoints of solubility and boiling point. The solids concentration of the varnish is usually 10 to 60% by mass.

(Adhesive Layer)
The adhesive layer 5 can be formed using a known die bonding film (a film used for bonding a semiconductor chip to a support member or for bonding semiconductor chips together) or an adhesive composition constituting the same. The adhesive composition constituting the adhesive layer 5 may contain, for example, an epoxy resin, an epoxy resin curing agent, and a reactive group-containing (meth)acrylic copolymer. The adhesive composition constituting the adhesive layer 5 may further contain a coupling agent, a curing accelerator, a filler, etc.

Epoxy resins include, for example, bisphenol A type epoxy resins, bisphenol F type epoxy resins, bisphenol S type epoxy resins, alicyclic epoxy resins, aliphatic chain epoxy resins, phenol novolac type epoxy resins, cresol novolac type epoxy resins, bisphenol A novolac type epoxy resins, diglycidyl ethers of biphenols, diglycidyl ethers of naphthalene diols, diglycidyl ethers of phenols, diglycidyl ethers of alcohols, and difunctional epoxy resins such as alkyl substituted, halogenated, and hydrogenated products thereof, novolac type epoxy resins, etc. In addition, other commonly known epoxy resins such as polyfunctional epoxy resins and heterocyclic epoxy resins may be applied. Note that components other than epoxy resins may be included as impurities within a range that does not impair the properties.

Epoxy resin curing agents include, for example, phenolic resins that can be obtained by reacting a phenolic compound with a xylylene compound, which is a divalent linking group, in the absence or presence of an acid catalyst. Phenol compounds used in the production of phenolic resins include, for example, phenol, o-cresol, m-cresol, p-cresol, o-ethylphenol, p-ethylphenol, o-n-propylphenol, m-n-propylphenol, p-n-propylphenol, o-isopropylphenol, m-isopropylphenol, p-isopropylphenol, o-n-butylphenol, m-n-butylphenol, p-n-butylphenol, o-isobutylphenol, m-isobutylphenol, p-isobutylphenol, octylphenol, nonylphenol, 2,4-xylenol, Examples of the xylylene compound include 2,6-xylenol, 3,5-xylenol, 2,4,6-trimethylphenol, resorcinol, catechol, hydroquinone, 4-methoxyphenol, o-phenylphenol, m-phenylphenol, p-phenylphenol, p-cyclohexylphenol, o-allylphenol, p-allylphenol, o-benzylphenol, p-benzylphenol, o-chlorophenol, p-chlorophenol, o-bromophenol, p-bromophenol, o-iodophenol, p-iodophenol, o-fluorophenol, m-fluorophenol, and p-fluorophenol. As the xylylene compound which is a divalent linking group used in the production of the phenolic resin, the following xylylene dihalides, xylylene diglycols, and derivatives thereof can be used. That is, specific examples of the xylylene compound include α,α'-dichloro-p-xylene, α,α'-dichloro-m-xylene, α,α'-dichloro-o-xylene, α,α'-dibromo-p-xylene, α,α'-dibromo-m-xylene, α,α'-dibromo-o-xylene, α,α'-diiodo-p-xylene, α,α'-diiodo-m-xylene, α,α'-diiodo- o-xylene, α,α'-dihydroxy-p-xylene, α,α'-dihydroxy-m-xylene, α,α'-dihydroxy-o-xylene, α,α'-dimethoxy-p-xylene, α,α'-dimethoxy-m-xylene, α,α'-dimethoxy-o-xylene, α,α'-diethoxy-p-xylene, α,α'-diethoxy-m-xylene, α,α'-diethoxy-o-xylene, xylene, α,α'-di-n-propoxy-p-xylene, α,α'-di-n-propoxy-m-xylene, α,α'-di-n-propoxy-o-xylene, α,α'-diisopropoxy-p-xylene, α,α'-diisopropoxy-m-xylene, α,α'-diisopropoxy-o-xylene, α,α'-di-n-butoxy-p-xylene, α,α'-di-n-butoxy- Examples include m-xylene, α,α'-di-n-butoxy-o-xylene, α,α'-diisobutoxy-p-xylene, α,α'-diisobutoxy-m-xylene, α,α'-diisobutoxy-o-xylene, α,α'-di-tert-butoxy-p-xylene, α,α'-di-tert-butoxy-m-xylene, and α,α'-di-tert-butoxy-o-xylene.

When reacting a phenolic compound with a xylylene compound, a phenolic resin can be obtained by reacting the compounds at 50 to 250°C until the raw material xylylene compound is substantially eliminated and the reaction composition becomes constant, using acid catalysts such as mineral acids such as hydrochloric acid, sulfuric acid, phosphoric acid, and polyphosphoric acid; organic carboxylic acids such as dimethyl sulfate, diethyl sulfate, p-toluenesulfonic acid, methanesulfonic acid, and ethanesulfonic acid; super strong acids such as trifluoromethanesulfonic acid; strong acid ion exchange resins such as alkane sulfonic acid type ion exchange resins; super strong acid ion exchange resins such as perfluoroalkane sulfonic acid type ion exchange resins (trade name: Nafion, manufactured by Du Pont, "Nafion" is a registered trademark); natural and synthetic zeolites; and activated clay (acid clay). The reaction time can be set appropriately depending on the raw material and reaction temperature, and can be, for example, about 1 to 15 hours, and can be determined by tracking the reaction composition using GPC (gel permeation chromatography) or the like.

The reactive group-containing (meth)acrylic copolymer may be, for example, an epoxy group-containing (meth)acrylic copolymer. The epoxy group-containing (meth)acrylic copolymer may be a copolymer obtained by using glycidyl (meth)acrylate as a raw material in an amount of 0.5 to 6% by mass relative to the obtained copolymer. If the content of glycidyl (meth)acrylate is 0.5% by mass or more, high adhesive strength is easily obtained, while if it is 6% by mass or less, gelation tends to be suppressed. The monomer constituting the remainder of the reactive group-containing (meth)acrylic copolymer may be, for example, an alkyl (meth)acrylate having an alkyl group having 1 to 8 carbon atoms, such as methyl (meth)acrylate, styrene, acrylonitrile, etc. Among these, the monomer constituting the remainder of the reactive group-containing (meth)acrylic copolymer may be ethyl (meth)acrylate and/or butyl (meth)acrylate. The mixing ratio can be adjusted taking into account the Tg of the reactive group-containing (meth)acrylic copolymer. If the Tg is -10°C or higher, the tackiness of the adhesive layer 5 in the B-stage state tends to be suppressed from becoming too large, and the handleability tends to be excellent. The glass transition point (Tg) of the epoxy group-containing (meth)acrylic copolymer may be, for example, 30°C or lower. The polymerization method is not particularly limited, but examples thereof include pearl polymerization and solution polymerization. An example of a commercially available epoxy group-containing (meth)acrylic copolymer is HTR-860P-3 (product name, manufactured by Nagase ChemteX Corporation).

From the viewpoint of adhesiveness and heat resistance, the weight average molecular weight of the epoxy group-containing (meth)acrylic copolymer may be 100,000 or more, or may be 300,000 to 3,000,000, or 500,000 to 2,000,000. If the weight average molecular weight is 3,000,000 or less, it is possible to suppress a decrease in the filling property between the chip and the substrate supporting it. The weight average molecular weight is a polystyrene-equivalent value obtained by using a calibration curve of standard polystyrene in gel permeation chromatography (GPC).

The coupling agent may be a silane coupling agent. Specific examples of silane coupling agents include γ-ureidopropyltriethoxysilane, γ-mercaptopropyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, 3-(2-aminoethyl)aminopropyltrimethoxysilane, etc.

Examples of curing accelerators include tertiary amines, imidazoles, and quaternary ammonium salts. Specific examples of curing accelerators include 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and 1-cyanoethyl-2-phenylimidazolium trimellitate.

The filler may be an inorganic filler. Specific examples of inorganic fillers include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whiskers, boron nitride, crystalline silica, and amorphous silica.

The thickness of the adhesive layer 5 may be, for example, 0.1 μm or more, 1 μm or more, 2 μm or more, or 3 μm or more, and may be 100 μm or less, 50 μm or less, 20 μm or less, or 10 μm or less.

The adhesive layer 5 may be an embodiment that does not include an epoxy resin or an epoxy resin curing agent. For example, when the adhesive layer 5 includes a reactive group-containing (meth)acrylic copolymer, the adhesive layer 5 may include the reactive group-containing (meth)acrylic copolymer, a curing accelerator, and a filler.

The adhesive layer 5 may be formed by preparing a varnish of the adhesive composition (varnish for forming the adhesive layer) and applying it to the surface of the adhesive layer 3, or by forming the adhesive layer 5 on a release-treated film and attaching it to the adhesive layer 3. The varnish of the adhesive composition (varnish for forming the adhesive layer) may be an organic solvent that can dissolve each component other than the filler and that volatilizes when heated. Specific examples of organic solvents include those similar to those in the varnish of the ultraviolet-curing adhesive.

(Integrated film)
The integrated film 9 can be manufactured, for example, by a method including the steps of preparing a dicing film 7 having a base layer 1 and an adhesive layer 3 containing an ultraviolet-curable adhesive provided on the base layer 1, and providing an adhesive layer 5 on the adhesive layer 3 of the dicing film 7.

In the integrated film 9, the adhesive strength of the adhesive layer 3 to the adhesive layer 5 may be 0.50 N/25 mm or more, 1.00 N/25 mm or more, or 1.50 N/25 mm or more. This adhesive strength is the T-peel strength measured under conditions of a temperature of 25±3°C, humidity of 55±5%, and a peeling speed of 300 mm/min. The T-peel strength is measured in a state where a support tape is attached to the adhesive layer side and cut into a size of 25 mm wide and 100 mm long. When the adhesive strength (T-peel strength) of the adhesive layer 3 to the adhesive layer 5 is in such a range, peeling between the end of the semiconductor chip with the adhesive layer piece and the adhesive layer before the adhesive layer 3 hardens tends to be suppressed. The adhesive strength of the adhesive layer 3 to the adhesive layer 5 may be, for example, 5.00 N/25 mm or less, 3.00 N/25 mm or less, or 2.00 N/25 mm or less.

In the integrated film 9, the adhesive layer 3 is irradiated with ultraviolet light (dominant wavelength: 365 nm) having an illuminance of 80 mW/cm ² and an exposure dose of 130 mJ/cm ² to cure the adhesive layer 3. The adhesive strength of the adhesive cured layer 11 to the adhesive layer 5 after this may be 0.30 N/25 mm or less, 0.20 N/25 mm or less, or 0.10 N/25 mm or less. This adhesive strength is a T-peel strength measured under conditions of a temperature of 25±3° C. and a humidity of 55±5% at a peeling speed of 300 mm/min by T-peel. The T-peel strength is measured in a state where a support tape is attached to the adhesive layer side and cut into a size of 25 mm wide and 100 mm long. When the adhesive strength of the adhesive cured layer 11 to the adhesive layer 5 is 0.30 N/25 mm or less, it is possible to achieve excellent pick-up properties. The adhesive strength of the pressure-sensitive adhesive cured layer 11 to the adhesive layer 5 may be 0.03 N/25 mm or more, or 0.05 N/25 mm or more.

(Semiconductor chip)
The semiconductor chip SC is formed by dividing a semiconductor wafer, and can be obtained by, for example, a DBG process. The shape of the semiconductor chip SC in a plan view may be, for example, a square or a rectangle. The area of the semiconductor chip SC may be 10 to 250 ^mm2 , 20 to 200 ^mm2 , or 30 to 150 ^mm2 . The length of one side of the semiconductor chip SC is, for example, 1 mm or more, and may be 2 to 18 mm or 3 to 15 mm.

The thickness of the semiconductor chip SC (thickness Dsc described below) may be, for example, 10 to 200 μm, or 20 to 100 μm. The thicknesses of the semiconductor chips SC may be the same or different from each other. The thickness of the semiconductor chip SC may be, for example, 50 μm or less, 40 μm or less, 30 μm or less, or 20 μm or less, or may be 10 μm or more, or 15 μm or more.

Figure 3 is a schematic cross-sectional view for explaining one embodiment of a method for manufacturing a laminate. The laminate 10 may be a laminate manufactured by a method including, for example, a step (step (a)) of forming grooves along dicing lines on the circuit formation surface of a semiconductor wafer, a step (step (b)) of grinding the back surface of the semiconductor wafer opposite the circuit formation surface on which the grooves are formed at least to a depth that reaches the grooves to manufacture multiple semiconductor chips, and a step (step (c)) of attaching an adhesive layer of an integrated film to the back surfaces of the multiple semiconductor chips.

In step (a), grooves w1 are formed along dicing lines on the circuit formation surface s1 of the semiconductor wafer SW (see Figures 3(a) and 3(b)).

Examples of semiconductor wafers SW include single crystal silicon, polycrystalline silicon, various ceramics, and compound semiconductors such as gallium arsenide. Semiconductor wafers SW typically have a circuit formation surface s1 and a back surface s2 opposite the circuit formation surface s1.

The thickness Dsw of the semiconductor wafer SW is greater than the thickness Dsc of the semiconductor chip SC. The thickness Dsw of the semiconductor wafer SW may be, for example, 50 to 3000 μm, 100 to 2000 μm, or 200 to 1500 μm.

The grooves w1 are formed by performing half-cut dicing using a dicing blade 23 along the dicing lines of the semiconductor wafer SW (see FIG. 3(b)). Half-cut dicing means cutting the semiconductor wafer SW to a depth d1 (depth d1 may be less than the thickness Dsw of the semiconductor wafer SW) so as not to cut the semiconductor wafer SW completely. Half-cut dicing using the dicing blade 23 can be performed using a commercially available dicing saw. The grooves w1 are formed on the circuit formation surface s1 of the semiconductor wafer SW, for example, so as to form a lattice shape in a plan view.

In step (b), the back surface s2 of the semiconductor wafer SW (semiconductor wafer SWa) on which the grooves w1 are formed, opposite the circuit formation surface s1, is ground to a depth (depth d2 in FIG. 3(d)) that reaches at least the grooves w1, to produce multiple semiconductor chips SC (see FIGS. 3(c), 3(d), and 3(e)). The sum of the depths d1 and d2 of the semiconductor wafer SW may be the thickness Dsw of the semiconductor wafer SW.

In step (b), first, a backgrind tape 25 is applied to the circuit formation surface s1 of the semiconductor wafer SW on which the groove w1 is formed. The backgrind tape 25 may be a backgrind tape used in the field, and may be, for example, a backgrind tape having an adhesive layer containing an ultraviolet-curing adhesive.

Then, the back surface s2 of the semiconductor wafer SW on which the groove w1 is formed is ground. Grinding the back surface of the semiconductor wafer SW on which the groove w1 is formed can be performed using a general grinder. By grinding the back surface s2 in this manner, multiple semiconductor chips SC having a thickness Dsc can be produced, as shown in FIG. 3(e). The thickness Dsc can be equal to or less than the depth d1. The semiconductor chip SC typically has a circuit formation surface s1 and a back surface s3 opposite the circuit formation surface s1.

In step (c), the adhesive layer 5 of the integrated film 9 is attached to the back surface s3 of the semiconductor chips SC obtained above (see FIG. 3(f)). In this manner, a laminate 50 can be obtained that has, in this order, the base layer 1, the pressure-sensitive adhesive layer 3, the adhesive layer 5, the semiconductor chips SC, and the backgrind tape 25.

Then, the backgrind tape 25 can be peeled off from the laminate 50 to obtain the laminate 10. If the backgrind tape 25 has an adhesive layer containing an ultraviolet-curing adhesive, the adhesive layer of the backgrind tape 25 can be irradiated with ultraviolet light to harden the adhesive layer and reduce its adhesive strength, thereby allowing the backgrind tape 25 to be efficiently peeled off from the laminate 50.

<Step (B)>
In this step, the adhesive layer 3 of the laminate 10 is irradiated with ultraviolet light to form an adhesive cured material layer 11 containing a cured product of the ultraviolet-curable adhesive (see Figs. 1(b) and 1(c)).

Irradiation with ultraviolet light is performed, for example, from the substrate layer 1 side through the substrate layer 1, as shown in Fig. 1 (b). The source of ultraviolet light irradiation is not particularly limited, and for example, a metal halide lamp, a high pressure sodium lamp, a UV-LED lamp, or the like can be used. The illuminance of the ultraviolet light on the pressure-sensitive adhesive layer 3 may be, for example, 1 to 1000 mW/ ^cm2 , 10 to 900 mW/ ^cm2 , or 30 to 800 mW/ ^cm2 . The amount of irradiation of the ultraviolet light on the pressure-sensitive adhesive layer 3 may be, for example, 10 to 3000 mJ/ ^cm2 , 50 to 2500 mJ/ ^cm2 , or 100 to 2000 mJ/ ^cm2 .

In this way, a laminate 20 can be obtained having, in this order, a base layer 1, a cured adhesive layer 11, an adhesive layer 5, and a plurality of semiconductor chips SC.

<Step (C)>
In this process, a laser 15 is irradiated onto the adhesive layer 5 through the gap g1 between multiple semiconductor chips SC, and the adhesive layer 5 is diced into individual pieces to produce a semiconductor chip 13 with an adhesive layer piece, which includes a semiconductor chip SC and an adhesive layer piece 5a (see Figures 2(a) and 2(b)).

The semiconductor chips SC obtained by dicing a semiconductor wafer usually have a gap g1 between the semiconductor chips SC. By irradiating the adhesive layer 5 with a laser 15 through the gap g1, an adhesive layer piece 5a having a shape similar to the shape of the semiconductor chip SC in a plan view can be obtained.

As shown in FIG. 2(a), the laser 15 is irradiated from the semiconductor chip SC side through the gap g1 between the multiple semiconductor chips SC. The laser 15 can be irradiated using a commercially available laser saw. The frequency of the laser 15 may be, for example, 30 to 250 kHz, 50 to 200 kHz, or 80 to 120 kHz. The output of the laser 15 may be, for example, 0.05 to 2.0 W, 0.1 to 1.0 W, or 0.2 to 0.5 W. The feed speed in the irradiation of the laser 15 may be, for example, 20 to 500 mm/s, 50 to 400 mm/s, or 100 to 300 mm/s.

In this manner, a semiconductor chip 13 with an adhesive layer piece can be produced, which includes a semiconductor chip SC and an adhesive layer piece 5a, and a laminate 30 can be obtained which has, in this order, a base layer 1, a cured adhesive layer 11, and a plurality of semiconductor chips 13 with adhesive layer pieces.

The manufacturing method of the semiconductor device of this embodiment may further include a step of picking up the semiconductor chip 13 with the adhesive layer piece (step (D)), a step of bonding the picked-up semiconductor chip 13 with the adhesive layer piece and the support member 21 by thermocompression bonding via the adhesive layer piece 5a (step (E)), a step of thermally curing the adhesive layer piece 5a (step (F)), etc.

<Step (D)>
In this process, if necessary, the individualized semiconductor chips 13 with adhesive layer pieces are separated from each other, and the semiconductor chips 13 with adhesive layer pieces pushed up by the needles 17 from the base layer 1 side are sucked up by the suction collet 19 and picked up from the adhesive cured layer 11.

<Step (E)>
In this process, the picked-up semiconductor chip 13 with the adhesive layer piece is bonded to the support member 21 by thermocompression via the adhesive layer piece 5a. One or more semiconductor chips 13 with adhesive layer pieces (semiconductor chips SC) may be bonded to the support member 21.

The conditions for thermocompression bonding of the semiconductor chip 13 with the adhesive layer piece can be adjusted as appropriate depending on the constituent components of the adhesive layer piece 5a. The heating temperature in the thermocompression bonding may be, for example, 80 to 160°C. The load in the thermocompression bonding may be, for example, 5 to 15 N. The heating time in the thermocompression bonding may be, for example, 0.5 to 20 seconds.

<Step (F)>
In this step, the adhesive layer piece 5a is thermally cured. The thermal curing conditions of the adhesive layer piece 5a can be appropriately adjusted depending on the constituent components of the adhesive layer piece 5a. The heating temperature in the thermal curing may be, for example, 60 to 200°C, 90 to 190°C, or 120 to 180°C. The heating time in the thermal curing may be 30 minutes to 5 hours, 1 to 3 hours, or 2 to 3 hours. The temperature or pressure may be changed stepwise.

In this way, a semiconductor device 40 (see FIG. 2(d)) can be manufactured that includes (multiple) semiconductor chips SC, a support member 21 on which the semiconductor chips SC are mounted, and a cured product of the adhesive layer piece 5a (cured product of the adhesive layer piece 5ac) that bonds the semiconductor chips SC and the support member 21.

According to the manufacturing method of the semiconductor device of this embodiment, when the adhesive layer is singulated by laser irradiation, the adhesive layer containing the ultraviolet-curable adhesive is already in a cured state, so that scattering of the components of the adhesive layer can be suppressed (and the edge peel strength can be sufficiently reduced), and problems when picking up the semiconductor chip with the adhesive layer piece can be suppressed.

The present disclosure will be explained in more detail below based on examples, but the present disclosure is not limited to these examples. Unless otherwise specified, all chemicals used were reagents (commercially available products).

[Synthesis of (meth)acrylic resin]
(Production Example 1-1: Synthesis of (meth)acrylic resin 1a)
The following components were placed in a 2000 mL flask equipped with a three-one motor, a stirring blade, and a nitrogen inlet tube.
Ethyl acetate (solvent): 635 parts by weight 2-Ethylhexyl acrylate: 395 parts by weight 2-Hydroxyethyl acrylate: 100 parts by weight Methacrylic acid: 5 parts by weight Azobisisobutyronitrile: 0.08 parts by weight

After stirring the contents until sufficiently homogenous, bubbling was performed for 60 minutes at a flow rate of 500 mL/min to degas the dissolved oxygen in the system. The temperature was raised to 78°C over 1 hour, and polymerization was allowed to continue for 6 hours after the temperature was raised. Next, the reaction solution was transferred to a 2000 mL pressure kettle equipped with a three-one motor, stirring blade, and nitrogen inlet tube, and heated at 120°C and 0.28 MPa for 4.5 hours, and then cooled to room temperature (25±3°C, the same below).

Next, 490 parts by mass of ethyl acetate was added and stirred to dilute the contents. 0.10 parts by mass of dioctyltin dilaurate was added as a urethane catalyst, and then 105.3 parts by mass of 2-methacryloyloxyethyl isocyanate (Karenz MOI (product name) manufactured by Showa Denko K.K.) was added and reacted at 70°C for 6 hours, and then cooled to room temperature. Next, ethyl acetate was further added to adjust the non-volatile content of the (meth)acrylic resin solution to 35% by mass, and a solution containing (meth)acrylic resin 1a of Production Example 1-1 was obtained.

(Production Example 1-2: Synthesis of (meth)acrylic resin 1b)
A solution containing (meth)acrylic resin 1b of Production Example 1-2 was obtained in the same manner as in Production Example 1-1, except that the raw material monomer composition shown in Production Example 1-1 in Table 1 was changed to the raw material monomer composition shown in Production Example 1-2 in Table 1.

(Production Example 1-3: Synthesis of (meth)acrylic resin 1c)
A solution containing (meth)acrylic resin 1c of Production Example 1-3 was obtained in the same manner as in Production Example 1-1, except that the raw material monomer composition shown in Production Example 1-1 in Table 1 was changed to the raw material monomer composition shown in Production Example 1-3 in Table 1.

(Production Example 2-1: Preparation of dicing film 2a)
The following components were mixed to prepare a UV-curable adhesive varnish (varnish for forming an adhesive layer) (see Table 2). The amount of ethyl acetate (solvent) was adjusted so that the total solid content of the varnish was 25% by mass.
(Meth)acrylic resin (A): Solution containing (meth)acrylic resin 1a of Production Example 1-1: 100 parts by mass (solid content)
Photopolymerization initiator: Omnirad 184 (trade name ("Omnirad" is a registered trademark), 1-hydroxycyclohexyl phenyl ketone, manufactured by IGM RESINS B.V.): 1.0 part by mass Photopolymerization initiator: Omnirad 819 (trade name ("Omnirad" is a registered trademark), phenylbis(2,4,6-trimethylbenzoyl)phosphine oxide, manufactured by IGM RESINS B.V.): 0.2 parts by mass Crosslinking agent: Coronate L (trade name, multifunctional isocyanate (reaction product of tolylene diisocyanate and trimethylolpropane), manufactured by Nippon Polyurethane Industry Co., Ltd., solid content 75% by mass): 2.0 parts by mass (solid content)
・Ethyl acetate (solvent)

A polyethylene terephthalate film (width 450 mm, length 500 mm, thickness 38 μm) with a release treatment applied to one side was prepared. A UV-curable adhesive varnish was applied to the release-treated side using an applicator, and then dried at 80°C for 3 minutes. This resulted in a dicing film 2a that included a polyethylene terephthalate film as a base layer and an adhesive layer with a thickness of 10 μm formed thereon.

A polyolefin film (width 450 mm, length 500 mm, thickness 90 μm) was prepared with one side subjected to corona treatment. The corona-treated side was attached to the adhesive layer of the laminate at room temperature. The adhesive layer was then transferred to the polyolefin film (cover film) by pressing with a rubber roll. This was then left at room temperature for 3 days to obtain dicing film 2a with cover film of Production Example 2-1.

(Production Example 2-2: Preparation of dicing film 2b)
A dicing film 2b with a cover film of Production Example 2-2 was obtained in the same manner as in Production Example 2-1, except that 100 parts by mass (solid content) of the solution containing the (meth)acrylic resin 1a of Production Example 1-1 was changed to 100 parts by mass (solid content) of the solution containing the (meth)acrylic resin 1b of Production Example 1-2, and further, 2.0 parts by mass (solid content) of the crosslinking agent was changed to 7.0 parts by mass (solid content).

(Manufacturing Example 2-3: Preparation of dicing film 2c)
A dicing film 2c with a cover film of Production Example 2-3 was obtained in the same manner as in Production Example 2-1, except that 100 parts by mass (solid content) of the solution containing the (meth)acrylic resin 1a of Production Example 1-1 was changed to 100 parts by mass (solid content) of the solution containing the (meth)acrylic resin 1c of Production Example 1-3.

(Production Example 3-1: Preparation of die bonding film 3a)
A varnish for forming an adhesive layer was prepared by mixing the following components. First, cyclohexanone (solvent) was added to a mixture containing the following components, and the mixture was stirred and mixed, and then further kneaded for 90 minutes using a bead mill.
Epoxy resin: N-500P-10 (trade name, manufactured by DIC Corporation, o-cresol novolac type epoxy resin, epoxy equivalent: 204 g/eq, softening point: 75 to 85°C): 18 parts by mass Epoxy resin: EXA-830CRP (trade name, manufactured by DIC Corporation, bisphenol F type epoxy resin, epoxy equivalent: 160, molecular weight: 1800, softening point: 85°C): 10 parts by mass Epoxy resin curing agent: MEH-7800M (trade name, manufactured by Meiwa Chemical Industry Co., Ltd., phenylaralkyl type phenolic resin, hydroxyl group equivalent: 174 g/eq, softening point: 80°C): 22 parts by mass Coupling agent: NUC A-189 (trade name, manufactured by Momentive Performance Materials Japan LLC, silane coupling agent, γ-mercaptopropyltrimethoxysilane): 0.1 parts by mass Coupling agent: NUC A-1160 (product name, manufactured by Momentive Performance Materials Japan, LLC, silane coupling agent, γ-ureidopropyltriethoxysilane): 0.2 parts by mass Filler: R972 (product name, manufactured by Nippon Aerosil Co., Ltd., silica filler, average particle size 0.016 μm, maximum particle size 1.0 μm or less): 5 parts by mass

The following components were further added to the mixture obtained as described above, and the mixture was subjected to stirring and mixing and vacuum deaeration to obtain a varnish for forming an adhesive layer.
Reactive group-containing (meth)acrylic copolymer: HTR-860P-3 (trade name, manufactured by Nagase ChemteX Corporation, epoxy group-containing acrylic copolymer, weight average molecular weight 800,000): 45 parts by mass Curing accelerator: Curesol 2PZ-CN (trade name ("Curesol" is a registered trademark), manufactured by Shikoku Chemical Industry Co., Ltd., 1-cyanoethyl-2-phenylimidazole): 0.1 parts by mass

A polyethylene terephthalate film (thickness 35 μm) with a release treatment applied to one side was prepared. A varnish for forming an adhesive layer was applied to the release-treated side using an applicator, and then heated and dried at 140°C for 5 minutes. This resulted in a die bonding film 3a including a polyethylene terephthalate film (carrier film) and a 3 μm-thick adhesive layer (B-stage state) formed thereon.

(Production Example 3-2: Preparation of die bonding film 3b)
A varnish for forming an adhesive layer was prepared by mixing the following components. First, cyclohexanone (solvent) was added to a mixture containing the following components, and the mixture was stirred and mixed, and then further kneaded for 90 minutes using a bead mill.
Epoxy resin: N-500P-10 (trade name, manufactured by DIC Corporation, o-cresol novolac type epoxy resin, epoxy equivalent: 204 g/eq, softening point: 75 to 85°C): 13 parts by mass Epoxy resin: YDF-8170C (trade name, manufactured by Nippon Steel Chemical & Material Co., Ltd., bisphenol F type epoxy resin, epoxy equivalent: 159 g/eq, liquid at 30°C): 0.5 parts by mass Epoxy resin hardener: PSM-4326 (trade name, manufactured by Gun-ei Chemical Industry Co., Ltd., phenol novolac type phenolic resin, hydroxyl equivalent: 105 g/eq, softening point: 120°C): 7 parts by mass Filler: SC2050-HLG (trade name, manufactured by Admatechs Co., Ltd., silica filler dispersion, average particle size: 0.50 μm): 30 parts by mass

The following components were further added to the mixture obtained as described above, and the mixture was subjected to stirring and mixing and vacuum deaeration to obtain a varnish for forming an adhesive layer.
Reactive group-containing (meth)acrylic copolymer: HTR-860P-3 (trade name, manufactured by Nagase ChemteX Corporation, epoxy group-containing acrylic copolymer, weight average molecular weight 800,000): 50 parts by mass Curing accelerator: Curesol 2PZ-CN (trade name ("Curesol" is a registered trademark), manufactured by Shikoku Chemical Industry Co., Ltd., 1-cyanoethyl-2-phenylimidazole): 0.1 parts by mass

A polyethylene terephthalate film (thickness 35 μm) with a release treatment applied to one side was prepared. A varnish for forming an adhesive layer was applied to the release-treated side using an applicator, and then heated and dried at 140°C for 5 minutes. This resulted in a die bonding film 3b that included a polyethylene terephthalate film (carrier film) and a 5 μm-thick adhesive layer (B-stage state) formed thereon.

(Production Example 4-1: Preparation of integrated film 4a)
The die bonding film 3a was cut into a circle with a diameter of 312 mm together with the carrier film. The dicing film 2a from which the polyethylene terephthalate film had been peeled off was attached to the cut die bonding film 3a at room temperature, and then left at room temperature for one day. Then, the dicing film 2a was cut into a circle with a diameter of 370 mm. In this way, an integrated film 4a of Production Example 4-1 was obtained.

(Production Example 4-2: Preparation of integrated film 4b)
An integral film 4b of Production Example 4-2 was obtained in the same manner as in Production Example 4-1, except that the die bonding film 3a was changed to a die bonding film 3b.

(Production Example 4-3: Preparation of integrated film 4c)
An integrated film 4c of Production Example 4-3 was obtained in the same manner as in Production Example 4-1, except that the dicing film 2a was changed to the dicing film 2b.

(Production Example 4-4: Production of integrated film 4d)
An integrated film 4d of Production Example 4-4 was obtained in the same manner as in Production Example 4-1, except that the dicing film 2a was changed to the dicing film 2c.

[Evaluation of adhesive strength of integrated film]
<Measurement of Adhesive Strength (30° Peel Strength) of Pressure-Sensitive Adhesive Layer to Adhesive Layer>
The adhesive strength of the adhesive layer before and after ultraviolet irradiation with respect to the adhesive layer was evaluated by measuring the T-peel strength. The sample for measuring the T-peel strength was obtained by attaching a support tape to the adhesive layer side of the dicing-die bonding integrated film and cutting it into a size of 25 mm wide and 100 mm long. The sample before ultraviolet irradiation was stored at room temperature for 30 minutes or more. The sample after ultraviolet irradiation was obtained by irradiating the sample before ultraviolet irradiation with ultraviolet light (dominant wavelength: 365 nm) with an illuminance of 80 mW/cm ² and an irradiation amount of 130 mJ/cm ² using an ultraviolet irradiation device (conveyor UV irradiation device CS60, GS Yuasa Corporation) before measuring it. For the T-peel strength measurement, an autograph (manufactured by Shimadzu Corporation) was used, and the sample was pulled at a speed of 300 mm/min at a temperature of 25±3°C and a humidity of 55±5%, and the average value of the stable points was taken from the obtained chart, and the average value was taken as the T-peel strength. The same measurement was carried out five times, and the average value was taken as the final T-peel strength value. In the T-peel test, the adhesive layer side was fixed, and the adhesive layer side was fixed so that it could be peeled off at a certain peel measurement. The results are shown in Table 2.

Example 1
[Preparation of semiconductor chip with adhesive layer piece]
<Preparation of laminate (1) (step (A))>
A semiconductor wafer with a thickness of 775 μm was prepared, and a full-automatic dicer (DFD6361, manufactured by Disco Corporation) was used to perform half-cutting on the circuit-forming surface (surface) of the semiconductor wafer, forming a groove with a depth of 60 μm. Next, a similar full-automatic dicer was used to perform half-cutting on a wafer with a thickness of 775 μm, forming a groove with a depth of 60 μm. The dicing blade used was ZH05-SD4000-N1-70-DD manufactured by Disco Corporation, and the rotation speed and cutting speed were 40,000 rpm and 30 mm/s, respectively. The size of the semiconductor chip was 4 mm x 12 mm.

Next, a backgrind tape laminator (RAD-3520F/12, manufactured by Lintec Corporation) was used to attach a backgrind tape to the circuit formation surface (front side) of the semiconductor wafer, and then a grinder (DGP8761, manufactured by Disco Corporation) was used to grind the semiconductor wafer from the back side so that the final semiconductor chip had a thickness of 25 μm, and the semiconductor wafer was diced into multiple semiconductor chips.

Next, in order to reduce the adhesive strength between the backgrind tape and the semiconductor chip, the backgrind tape was irradiated with ultraviolet light using a wafer mounter (DFM2800, manufactured by Disco Corporation). Then, using the same wafer mounter (DFM2800, manufactured by Disco Corporation), the integrated film 4a of Manufacturing Example 4-1 was attached to the back surface of the diced semiconductor wafer (the back surface of the semiconductor chip) under conditions of a temperature of 70°C, tension level 5, and an attachment speed of 10 mm/sec. At this time, a ring frame was attached to the outer peripheral region of the dicing tape. Then, by peeling off the backgrind tape, a laminate (1) was obtained that includes an integrated film having a base layer, a pressure-sensitive adhesive layer, and an adhesive layer in this order, and a plurality of semiconductor chips formed by dicing the semiconductor wafer and provided on the adhesive layer of the integrated film.

<Formation of Cured Pressure-Sensitive Adhesive Layer (Step (B))>
Next, in order to reduce the adhesive strength between the pressure-sensitive adhesive layer and the adhesive layer of the laminate (1), ultraviolet rays were irradiated from the base layer side to the pressure-sensitive adhesive layer with an illuminance of 80 mW/ ^cm2 and an exposure dose of 130 mJ/ ^cm2 using a die separator (DDS2300, manufactured by DISCO Corporation), forming a pressure-sensitive adhesive cured layer.

<Preparation of Laminate (2) (Step (C))>
Next, a laser was irradiated through the gap between the semiconductor chips using a laser saw (DFL7160, manufactured by Disco Corporation) to cut the adhesive layer. The laser irradiation conditions were a frequency of 100 kHz, an output of 0.3 W, and a feed rate of 200 mm/s. In this way, a laminate (2) having a base layer, a pressure-sensitive adhesive cured layer, and a plurality of semiconductor chips with adhesive layer pieces in this order was obtained.

[Evaluation of pick-up ability]
<Measurement of edge peel strength>
From the obtained laminate (2) having a plurality of semiconductor chips with adhesive layer pieces, excess semiconductor chips were removed using adhesive tape or the like so that the semiconductor chips with adhesive layer pieces were arranged in alternate rows. Double-sided tape was attached to the surface of the remaining semiconductor chips, and a support substrate was attached thereon. The dicing film was then cut from the back side along the support substrate size, and the laminate with the support substrate was separated from the dicing ring. The dicing film in the areas where the alternate rows of semiconductor chips were not present was cut into strips and removed to prepare a sample for measuring edge peel strength having the support substrate, double-sided tape, semiconductor chip, adhesive layer piece, adhesive cured layer, and base layer in this order.

The edge peel strength was measured using a benchtop peel tester (EZ-Test, manufactured by Shimadzu Corporation). Only the dicing film in a strip shape was clamped between a jig so that the peel angle between the adhesive cured layer and the adhesive layer piece was 90°, and set in the tester. The feed speed was 60 mm/min, and the support substrate was manually fed during peeling so that the peel angle between the adhesive cured layer and the adhesive layer piece was always 90°. The peel force corresponding to the edge of the obtained semiconductor chip was converted to a 20 mm width to calculate the edge peel strength. In a semiconductor chip with an adhesive layer piece of 4 mm x 12 mm, the peel strength in the direction perpendicular to the 4 mm side was defined as Ch1, and the peel strength in the direction parallel to the 4 mm side (perpendicular to the 12 mm side) was defined as Ch2, and the average was calculated from the peaks of N=5 for each. Three pieces each of Ch1 and Ch2 were measured, the average value of Ch1 and the average value of Ch2 were calculated, and the sum of the average values of Ch1 and Ch2 was calculated and divided by 2 to obtain the edge peel strength value of each sample. The results are shown in Table 3.

<Measurement of Cut Depth of Cured Pressure-Sensitive Adhesive Layer>
Using a 3D measuring laser microscope (OLS4100, manufactured by Olympus Corporation), the semiconductor chip with the adhesive layer piece was peeled off from the laminate (2) with adhesive tape or the like, and the incision depth generated in the adhesive cured layer at the laser cut line was observed in the state of the base material layer and the adhesive cured layer. The magnification was 50 times, and the depth was measured from the obtained image, and the average of N = 5 was taken as the incision depth. The results are shown in Table 3.

Example 2
Except for changing the integral film 4a of Production Example 4-1 to the integral film 4b of Production Example 4-2, the laminate (2) of Example 2 was produced in the same manner as in Example 1. Then, the pickup property of the laminate (2) of Example 2 was evaluated in the same manner as in Example 1. The results are shown in Table 3.

Example 3
Except for changing the integral film 4a of Production Example 4-1 to the integral film 4c of Production Example 4-3, the laminate (2) of Example 3 was produced in the same manner as in Example 1. Then, the pickup property of the laminate (2) of Example 3 was evaluated in the same manner as in Example 1. The results are shown in Table 3.

Example 4
Except for changing the integral film 4a of Production Example 4-1 to the integral film 4d of Production Example 4-4, the laminate (2) of Example 4 was produced in the same manner as in Example 1. Then, the pickup property of the laminate (2) of Example 4 was evaluated in the same manner as in Example 1. The results are shown in Table 3.

(Comparative Example 1)
After obtaining a laminate in step (A), the order of steps (B) and (C) was reversed, and the adhesive layer was cut by irradiating with a laser under the same conditions as in step (C), and then the adhesive layer was irradiated with ultraviolet light under the same conditions as in step (B) to form an adhesive cured layer. Except for this, the laminate (2) of Comparative Example 1 was produced in the same manner as in Example 1. Then, the pickup property of the laminate (2) of Comparative Example 1 was evaluated in the same manner as in Example 1. The results are shown in Table 3.

(Comparative Example 2)
Except for changing the integral film 4a of Production Example 4-1 to the integral film 4b of Production Example 4-2, a laminate (2) of Comparative Example 2 was produced in the same manner as in Comparative Example 1. Then, the pickup property of the laminate (2) of Comparative Example 2 was evaluated in the same manner as in Comparative Example 1. The results are shown in Table 3.

(Comparative Example 3)
Except for changing the integral film 4a of Production Example 4-1 to the integral film 4c of Production Example 4-3, a laminate (2) of Comparative Example 3 was produced in the same manner as in Comparative Example 1. Then, the pickup property of the laminate (2) of Comparative Example 3 was evaluated in the same manner as in Comparative Example 1. The results are shown in Table 3.

(Comparative Example 4)
Except for changing the integral film 4a of Production Example 4-1 to the integral film 4d of Production Example 4-4, a laminate (2) of Comparative Example 4 was produced in the same manner as in Comparative Example 1. Then, the pickup property of the laminate (2) of Comparative Example 4 was evaluated in the same manner as in Comparative Example 1. The results are shown in Table 3.

As shown in Table 3, the laminates (2) of Examples 1 to 4 had lower edge peel strength and smaller cutting depth of the adhesive cured layer than the laminates (2) of Comparative Examples 1 to 4. It was suggested that the manufacturing method of the semiconductor device disclosed herein can suppress problems when picking up a semiconductor chip with an adhesive layer piece when using an integrated film having an adhesive layer and an adhesive layer containing an ultraviolet-curable adhesive.

1...base material layer, 3...adhesive layer, 5...adhesive layer, 5a...adhesive layer piece, 5ac...cured adhesive layer piece, 7...dicing film, 9...integrated film, 10, 20, 30...laminated body, 11...cured adhesive layer, 13...semiconductor chip with adhesive layer piece, 15...laser, 17...needle, 19...suction collet, 21...support member, 23...dicing blade, 25...backgrind tape, 40...semiconductor device, SC...semiconductor chip, SW...semiconductor wafer, SWa...semiconductor wafer with grooves, DR...dicing ring, g1...gap, s1...circuit formation surface, s2, s3...back surface, d1, d2...depth, Dsw, Dsc...thickness.

Claims (4)

A step of preparing a laminate including a dicing/die bonding integrated film having a base layer, a pressure-sensitive adhesive layer containing an ultraviolet-curable pressure-sensitive adhesive, and an adhesive layer in this order, and a plurality of semiconductor chips formed by dicing a semiconductor wafer and provided on the adhesive layer of the dicing/die bonding integrated film;
a step of irradiating the pressure-sensitive adhesive layer of the laminate with ultraviolet light to form a pressure-sensitive adhesive cured material layer containing a cured product of the ultraviolet-curable pressure-sensitive adhesive;
irradiating the adhesive layer with a laser through gaps between the plurality of semiconductor chips to separate the adhesive layer into individual pieces, thereby producing semiconductor chips with adhesive layer pieces;
In this order,
A method for manufacturing a semiconductor device. The laminate comprises:
forming grooves along dicing lines on a circuit forming surface of the semiconductor wafer;
a step of grinding a back surface of the semiconductor wafer opposite to the circuit forming surface on which the grooves are formed, to a depth that reaches at least the grooves, thereby producing the plurality of semiconductor chips;
attaching the adhesive layer of the dicing and die bonding integrated film to the rear surfaces of the semiconductor chips;
A laminate produced by a method comprising:
The method for manufacturing a semiconductor device according to claim 1 . In the dicing/die bonding integrated film, the adhesive strength of the pressure-sensitive adhesive layer to the adhesive layer is 0.50 N/25 mm or more, as measured under conditions of a temperature of 25±3° C., a humidity of 55±5%, and a peeling speed of 300 mm/min using a T-peel method.
The method for manufacturing a semiconductor device according to claim 1 or 2. In the dicing/die bonding integrated film, the pressure-sensitive adhesive layer is irradiated with ultraviolet light having an illuminance of 80 mW/ ^cm2 and an exposure dose of 130 mJ/ ^cm2 to cure the pressure-sensitive adhesive layer, and then the adhesive strength of the pressure-sensitive adhesive cured layer to the adhesive layer is 0.30 N/25 mm or less, as measured at a temperature of 25±3°C, a humidity of 55±5%, and a peeling speed of 300 mm/min using a T-peel method.
The method for manufacturing a semiconductor device according to claim 3 .

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