TWI623432B - Resin film forming sheet - Google Patents
Resin film forming sheet Download PDFInfo
- Publication number
- TWI623432B TWI623432B TW103113810A TW103113810A TWI623432B TW I623432 B TWI623432 B TW I623432B TW 103113810 A TW103113810 A TW 103113810A TW 103113810 A TW103113810 A TW 103113810A TW I623432 B TWI623432 B TW I623432B
- Authority
- TW
- Taiwan
- Prior art keywords
- resin film
- sheet
- forming layer
- film forming
- layer
- Prior art date
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- 229920005989 resin Polymers 0.000 title claims abstract description 333
- 239000011347 resin Substances 0.000 title claims abstract description 333
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- 239000010408 film Substances 0.000 description 477
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- 235000012431 wafers Nutrition 0.000 description 126
- 239000004065 semiconductor Substances 0.000 description 85
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- 230000001681 protective effect Effects 0.000 description 18
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- 102100037815 Fas apoptotic inhibitory molecule 3 Human genes 0.000 description 2
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- 229920006255 plastic film Polymers 0.000 description 1
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- KCTAWXVAICEBSD-UHFFFAOYSA-N prop-2-enoyloxy prop-2-eneperoxoate Chemical compound C=CC(=O)OOOC(=O)C=C KCTAWXVAICEBSD-UHFFFAOYSA-N 0.000 description 1
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- 125000003698 tetramethyl group Chemical group [H]C([H])([H])* 0.000 description 1
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- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical compound CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 description 1
- RUELTTOHQODFPA-UHFFFAOYSA-N toluene 2,6-diisocyanate Chemical compound CC1=C(N=C=O)C=CC=C1N=C=O RUELTTOHQODFPA-UHFFFAOYSA-N 0.000 description 1
- IUCJMVBFZDHPDX-UHFFFAOYSA-N tretamine Chemical compound C1CN1C1=NC(N2CC2)=NC(N2CC2)=N1 IUCJMVBFZDHPDX-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B5/00—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/05—Interconnection of layers the layers not being connected over the whole surface, e.g. discontinuous connection or patterned connection
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/06—Interconnection of layers permitting easy separation
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/50—Properties of the layers or laminate having particular mechanical properties
- B32B2307/58—Cuttability
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/70—Other properties
- B32B2307/748—Releasability
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/20—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself
- C09J2301/204—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself the adhesive coating being discontinuous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Dicing (AREA)
- Laminated Bodies (AREA)
- Adhesive Tapes (AREA)
Abstract
提供捲成捲筒狀時可抑制樹脂膜形成層發生捲痕之樹脂膜形成用板片。 A sheet for forming a resin film which can suppress occurrence of a curl in the resin film forming layer when it is wound into a roll shape.
關於本發明之樹脂膜形成用板片,係將支持板片、樹脂膜形成層、及剝離薄膜,以此順序層積而成,剝離薄膜的厚度為50μm以上。 In the sheet for forming a resin film of the present invention, the support sheet, the resin film forming layer, and the release film are laminated in this order, and the thickness of the release film is 50 μm or more.
Description
本發明係關於,可效率良好地對晶片形成接著強度高的樹脂膜,且可製造可靠度高的半導體裝置之樹脂膜形成用板片。 According to the present invention, a resin film having a high adhesion strength can be efficiently formed on a wafer, and a resin film forming sheet of a semiconductor device having high reliability can be manufactured.
以大徑的狀態製造的半導體晶圓,切斷分離成元件小片(半導體晶片)之後,有移至下一步驟之接合步驟。此時,半導體晶圓係以預先黏著於接著板片的狀態加以切割、清洗、乾燥、擴張及拾取的各步驟之後,移送至下一步驟的接合步驟。 After the semiconductor wafer manufactured in a state of a large diameter is cut and separated into small pieces (semiconductor wafer), the bonding step is moved to the next step. At this time, the semiconductor wafer is subjected to each step of cutting, washing, drying, expanding, and picking up in a state of being adhered to the sheet, and then transferred to the joining step of the next step.
於該等步驟之中,為簡化拾取步驟及接合步驟的製程,有各種可同時兼具晶圓固定功能與晶粒接合功能的切割.晶粒接合用接著板片的提案。例如,藉由使用上述接著板片,可得於背面黏貼接著劑層之半導體晶片,可作有機基板-晶片間、導線架-晶片間、晶片-晶片間等的直接晶粒接合。 Among these steps, in order to simplify the process of the pick-up step and the bonding step, there are various cuts that can simultaneously have both the wafer fixing function and the die bonding function. Proposal for a die sheet for die bonding. For example, by using the above-mentioned bonding sheet, a semiconductor wafer having an adhesive layer on the back surface can be obtained, which can be used as a direct die bonding of an organic substrate-wafer, a lead frame-wafer, a wafer-wafer, and the like.
於專利文獻1(日本特開2005-350520號公報),記載有作為切割.晶粒接合用接著板片,具有依序層積剝離基材、接著層、黏著層及基材薄膜之構成之接著板片。 Patent Document 1 (JP-A-2005-350520) is described as cutting. The die sheet for die bonding has an adhesive sheet in which the base material, the adhesive layer, the adhesive layer, and the base film are sequentially laminated.
此外,近年,有使用所謂被稱為面朝下(face down)模式的構裝法進行半導體裝置的製造。在於面朝下模式,使用於電路面上具有凸塊等的電極之半導體晶片(以下,有僅稱為「晶片」之情形。),該電極與基板接合。因此,與晶片的電 路面相反側之面(晶片背面)有呈露出之情形。 Further, in recent years, the fabrication of semiconductor devices has been carried out using a so-called "face down" mode of fabrication. In the face-down mode, a semiconductor wafer having an electrode such as a bump on a circuit surface (hereinafter, simply referred to as a "wafer") is used, and the electrode is bonded to the substrate. Therefore, the electricity with the wafer The surface on the opposite side of the road surface (the back side of the wafer) is exposed.
該露出的晶片背面,有藉由有機膜保護之情形。先前,具有由該有機膜組成的保護膜的晶片,係將液狀的樹脂以旋轉塗佈法塗佈於晶圓背面,乾燥,硬化與晶圓一起切斷保護膜而得。但是,由於如此形成之保護膜的厚度精度並不充分,有降低產品良率之情形。 The exposed wafer back surface is protected by an organic film. Conventionally, a wafer having a protective film composed of the organic film is obtained by applying a liquid resin to a back surface of a wafer by a spin coating method, drying it, and curing the film together with the wafer. However, since the thickness precision of the protective film thus formed is not sufficient, there is a case where the yield of the product is lowered.
為了解決上述問題,於專利文獻2(日本特開2012-33557號公報)記載有,於切割帶上形成接著劑層之附有接著劑層之切割帶,以上述接著劑層作為黏貼面,隔著既定的間隔層積於隔離器的半導體裝置製造用薄膜。 In order to solve the problem, the dicing tape with an adhesive layer formed on the dicing tape on the dicing tape is described in Patent Document 2 (JP-A-2012-33557), and the adhesive layer is used as an adhesive surface. A film for manufacturing a semiconductor device in which a predetermined interval is laminated on an isolator.
[專利文獻1]日本特開2005-350520號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2005-350520
[專利文獻2]日本特開2012-33557號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2012-33557
為了得到專利文獻1或專利文獻2所記載的黏貼有接著劑層或保護膜之晶片而使用的樹脂膜形成用板片,於其製造後,到被使用之間,有以捲成捲筒狀的狀態保管之情形。剝離薄膜(剝離基材或隔離器)不具有充分的厚度時,將樹脂膜形成用板片捲成捲筒狀,則會在接著劑層或保護膜發生的捲痕可認為是導致樹脂膜形成用板片上的厚度不均勻的部分的段差之原因。 The sheet for forming a resin film used for the wafer to which the adhesive layer or the protective film is adhered, which is described in Patent Document 1 or Patent Document 2, is rolled into a roll shape after being used. The state of the state of storage. When the release film (release substrate or separator) does not have a sufficient thickness, when the resin film-forming sheet is wound into a roll shape, the occurrence of the resin film formation in the adhesive layer or the protective film may be considered to cause the formation of the resin film. The reason for the step difference of the portion of the plate having uneven thickness.
於接著劑層發生捲痕,則接著劑層的厚度精度降低,將接著劑層黏貼於晶圓時咬入空氣,或經由接著劑層將半導體晶片接著於晶片搭載部(基板或其他的晶片)時之接著性的降低,或成為發生空隙的原因。結果,難以得到優良的可靠度的半導體裝置。 When a flaw is formed in the adhesive layer, the thickness of the adhesive layer is lowered, the air is trapped when the adhesive layer is adhered to the wafer, or the semiconductor wafer is attached to the wafer mounting portion (substrate or other wafer) via the adhesive layer. The decrease in the adhesion of the time or the cause of the occurrence of voids. As a result, it is difficult to obtain a semiconductor device of excellent reliability.
此外,於保護膜發生捲痕,則於上述以外,有成為外觀不良的原因。 Further, in the case where a wrinkle is formed in the protective film, there is a cause of poor appearance in addition to the above.
本發明係有鑑於如上所述之先前技術所完成者。即,本發明的課題,係在於提供可抑制捲成捲筒狀時於樹脂膜形成層發生捲痕的樹脂膜形成用板片。 The present invention has been accomplished in view of the prior art as described above. In other words, it is an object of the present invention to provide a sheet for forming a resin film which can prevent a curl from occurring in a resin film forming layer when wound into a roll.
本發明包含以下的要點。 The present invention includes the following points.
〔1〕一種樹脂膜形成用板片,將支持板片、樹脂膜形成層、及剝離薄膜,以此順序層積而成,剝離薄膜的厚度為50μm以上。 [1] A sheet for forming a resin film, which is formed by laminating a supporting sheet, a resin film forming layer, and a release film in this order, and the thickness of the release film is 50 μm or more.
〔2〕根據〔1〕之樹脂膜形成用板片,其中於剝離薄膜,由樹脂膜形成層側之面,沿著樹脂膜形成層的外周形成切入部,切入部的切入深度為剝離薄膜的厚度的1/2以上。 [2] The sheet for forming a resin film according to [1], wherein the peeling film is formed on the surface side of the resin film layer, and the cut portion is formed along the outer periphery of the resin film forming layer, and the cut depth of the cut portion is the peeling film. 1/2 or more of the thickness.
〔3〕根據〔2〕之樹脂膜形成用板片,其中支持板片的直徑較樹脂膜形成層的直徑大,於剝離薄膜,由支持板片側之面,沿著支持板片的外周形成切入部,沿著樹脂膜形成層的外周形成的切入部的切入深度,係沿 著支持板片的外周形成的切入部的切入深度以上。 [3] The sheet for forming a resin film according to [2], wherein the diameter of the supporting sheet is larger than the diameter of the resin film forming layer, and the peeling film forms a cut along the outer surface of the supporting sheet from the side of the supporting sheet side. The plunging depth of the cut portion formed along the outer circumference of the resin film forming layer The cut-in depth of the cut portion formed by the outer periphery of the support sheet is equal to or greater than the cut-in depth.
〔4〕根據〔3〕之樹脂膜形成用板片,其中沿著支持板片的外周形成的切入部的切入深度為剝離薄膜的厚度的3/5以下。 [4] The sheet for forming a resin film according to [3], wherein the cut-in portion formed along the outer periphery of the support sheet has a depth of cut of 3/5 or less of the thickness of the release film.
根據本發明的樹脂膜形成用板片,即使捲成捲筒狀,亦可防止樹脂膜形成層發生捲痕。 According to the sheet for forming a resin film of the present invention, even if it is wound into a roll shape, it is possible to prevent the resin film forming layer from being wound.
10‧‧‧樹脂膜形成用板片 10‧‧‧Plastic film forming sheet
11‧‧‧支持板片 11‧‧‧Support board
12‧‧‧樹脂膜形成層 12‧‧‧ resin film forming layer
13‧‧‧剝離薄膜 13‧‧‧Release film
D1‧‧‧切入部 D1‧‧‧cutting department
D2‧‧‧切入部 D2‧‧‧cutting department
第1圖係本發明之樹脂膜形成用板片之平面圖。 Fig. 1 is a plan view showing a sheet for forming a resin film of the present invention.
第2圖係表示將第1圖所示樹脂膜形成用板片沿著A-A線切斷時的示意剖面圖(第1態樣的樹脂膜形成用板片)。 Fig. 2 is a schematic cross-sectional view showing the sheet for forming a resin film shown in Fig. 1 taken along line A-A (a sheet for forming a resin film according to a first aspect).
第3圖係表示第2態樣的樹脂膜形成用板片。 Fig. 3 is a view showing a sheet for forming a resin film in a second aspect.
第4圖係表示第3態樣的樹脂膜形成用板片。 Fig. 4 is a view showing a sheet for forming a resin film according to a third aspect.
第5圖係表示第4態樣的樹脂膜形成用板片。 Fig. 5 is a view showing a sheet for forming a resin film according to a fourth aspect.
第6圖a係將支持板片11及樹脂膜形成層12所組成之層積體黏貼於半導體晶圓32的作業的一系列步驟之圖。 Fig. 6 is a view showing a series of steps of the operation of adhering the laminate of the support sheet 11 and the resin film forming layer 12 to the semiconductor wafer 32.
第6圖b係將支持板片11及樹脂膜形成層12所組成之層積體黏貼於半導體晶圓32的作業的一系列步驟之圖。 Fig. 6b is a view showing a series of steps of the operation of adhering the laminate of the support sheet 11 and the resin film forming layer 12 to the semiconductor wafer 32.
第6圖c係將支持板片11及樹脂膜形成層12所組成之層積體黏貼於半導體晶圓32的作業的一系列步驟之圖。 Fig. 6 is a view showing a series of steps of the operation of adhering the laminate of the support sheet 11 and the resin film forming layer 12 to the semiconductor wafer 32.
第6圖d係將支持板片11及樹脂膜形成層12所組成之層積體黏貼於半導體晶圓32的作業的一系列步驟之圖。 Fig. 6 is a view showing a series of steps of the operation of bonding the laminate of the support sheet 11 and the resin film forming layer 12 to the semiconductor wafer 32.
第7圖係先前將支持板片及樹脂膜形成層所組成之層積體 黏貼於半導體晶圓32的作業的一系列步驟之圖。 Figure 7 is a laminate of a support sheet and a resin film forming layer. A series of steps of the process of bonding to the semiconductor wafer 32.
以下,說明本發明之樹脂膜形成用板片之細節。 Hereinafter, details of the sheet for forming a resin film of the present invention will be described.
第1圖係表示本發明之樹脂膜形成用板片10之第1態樣的平面圖,第2圖係將第1圖所示樹脂膜形成用板片10,沿著A-A線切斷時之簡式剖面圖。如第1圖及第2圖所示,本發明的樹脂膜形成用板片10,具有依次層積支持板片11、樹脂膜形成層12及剝離薄膜13之構成。 Fig. 1 is a plan view showing a first aspect of the resin film-forming sheet 10 of the present invention, and Fig. 2 is a view showing the resin film-forming sheet 10 shown in Fig. 1 taken along the line AA. Profile view. As shown in FIG. 1 and FIG. 2, the resin film-forming sheet 10 of the present invention has a configuration in which a supporting sheet 11, a resin film forming layer 12, and a peeling film 13 are laminated in this order.
此外,支持板片11與樹脂膜形成層12,係切斷成所期望的平面形狀,部分層積於剝離薄膜13上。在此,所謂由支持板片11與樹脂膜形成層12所組成的層積體的期望的平面形狀,只要是層積體部分層積於剝離薄膜13上的狀態的形狀,並無特別限制,以與半導體晶圓等的工件的平面形狀一致的形狀為佳,例如,圓形、略圓形、四角形、五角形、六角形、八角形、晶圓形狀(圓的外周的一部分為直線的形狀)等的,較容易對半導體晶圓黏貼的形狀為佳。在此之中,為減少黏貼於半導體晶圓的部分以外的多餘的部分,以圓形或晶圓形狀為佳。 Further, the support sheet 11 and the resin film forming layer 12 are cut into a desired planar shape and partially laminated on the release film 13. Here, the desired planar shape of the laminate composed of the support sheet 11 and the resin film forming layer 12 is not particularly limited as long as it is a shape in which the laminate portion is laminated on the release film 13 . It is preferable to have a shape conforming to the planar shape of a workpiece such as a semiconductor wafer, for example, a circular shape, a slightly circular shape, a quadrangular shape, a pentagon shape, a hexagonal shape, an octagonal shape, or a wafer shape (a part of a circumference of a circle is a straight line shape) Etc. It is easier to shape the semiconductor wafer. Among them, in order to reduce excess portions other than the portion adhered to the semiconductor wafer, it is preferable to have a circular shape or a wafer shape.
(剝離薄膜) (release film)
剝離薄膜的厚度為50μm以上,以50~200μm為佳。剝離薄膜未滿50μm,則將樹脂膜形成用板片捲成捲筒狀時,會在樹脂膜形成層發生捲痕。樹脂膜形成層發生捲痕,則會降低樹脂膜形成層的厚度精度,為導致對晶圓黏貼樹脂膜形成層時咬入空氣,或在於後述的半導體裝置的製造方法,降低將半導體 晶片經由樹脂膜形成層接著於晶片搭載部(基板或其他的晶片)時之接著性及發生空隙的原因。結果,難以得到具有優良可靠度的半導體裝置。此外,將樹脂膜形成層用於作為保護晶片的背面的保護膜時,樹脂膜形成層的捲痕,於上述之外,將成外觀不良的原因。 The thickness of the release film is 50 μm or more, preferably 50 to 200 μm. When the peeling film is less than 50 μm, when the resin film forming sheet is wound into a roll shape, a curl is formed in the resin film forming layer. When the resin film forming layer is wound, the thickness of the resin film forming layer is lowered, and the air is trapped when the resin film is formed on the wafer, or the method of manufacturing the semiconductor device described later is used to reduce the semiconductor. The adhesion of the wafer to the wafer mounting portion (substrate or other wafer) via the resin film formation layer and the cause of the void. As a result, it is difficult to obtain a semiconductor device having excellent reliability. Further, when the resin film forming layer is used as a protective film for protecting the back surface of the wafer, the curl of the resin film forming layer may cause a defect in appearance other than the above.
在於本發明的樹脂膜形成用板片,藉由使剝離薄膜的厚度在於上述範圍,可消除上述問題。 In the sheet for forming a resin film of the present invention, the above problem can be eliminated by making the thickness of the release film in the above range.
剝離薄膜,係於使用樹脂膜形成用板片時作用作為載體薄膜的角色,可使用例如,聚乙烯薄膜、聚丙烯薄膜、聚丁烯薄膜、聚丁二烯薄膜、聚甲基戊烯薄膜、聚氯乙烯薄膜、氯乙烯共聚物薄膜、聚對苯二甲酸乙二醇酯薄膜、聚萘二甲酸乙二醇酯薄膜、聚對苯二甲酸丁二醇酯薄膜、聚氨酯薄膜、乙烯醋酸乙烯酯共聚物薄膜、離聚物樹脂薄膜、乙烯.(甲基)丙烯酸共聚物薄膜、乙烯.(甲基)丙烯酸酯共聚物薄膜、聚苯乙烯薄膜、聚碳酸酯薄膜、聚醯亞胺薄膜、氟樹脂薄膜等。此外,亦可使用該等的架橋薄膜。再者,亦可為該等的層積薄膜。 The release film is used as a carrier film when a sheet for forming a resin film is used, and for example, a polyethylene film, a polypropylene film, a polybutene film, a polybutadiene film, a polymethylpentene film, or the like can be used. Polyvinyl chloride film, vinyl chloride copolymer film, polyethylene terephthalate film, polyethylene naphthalate film, polybutylene terephthalate film, polyurethane film, ethylene vinyl acetate Copolymer film, ionomer resin film, ethylene. (Meth)acrylic copolymer film, ethylene. (Meth) acrylate copolymer film, polystyrene film, polycarbonate film, polyimide film, fluororesin film, and the like. In addition, such bridging films can also be used. Furthermore, it may be such a laminated film.
接於剝離薄膜的樹脂膜形成層之面的表面張力,以40mN/m以下為佳,以37mN/m以下更佳,以35mN/m以下特別佳。下限值通常為25mN/m程度。如此的表面張力較低的剝離薄膜,可適宜選擇材質而得,此外亦可於剝離薄膜的表面塗佈剝離劑進行剝離處理而得。 The surface tension of the surface of the resin film forming layer to be peeled off from the film is preferably 40 mN/m or less, more preferably 37 mN/m or less, and particularly preferably 35 mN/m or less. The lower limit is usually about 25 mN/m. Such a peeling film having a low surface tension can be obtained by appropriately selecting a material, or can be obtained by applying a release agent to the surface of the release film and performing a release treatment.
用於剝離處理的剝離劑,可使用醇酸系、矽酮系、氟系、不飽和聚酯系、聚烯烴系、蠟系等,特別是醇酸系、矽酮系、氟系的剝離劑,具有耐熱性而佳。 The release agent used for the release treatment may be an alkyd type, an anthrone type, a fluorine type, an unsaturated polyester type, a polyolefin type, a wax type or the like, and particularly an alkyd type, an anthrone type, or a fluorine type stripper. It has good heat resistance.
使用上述剝離劑於成為剝離薄膜的基體的薄膜等的表面作剝離處理,可將剝離劑直接以無溶劑,或以溶劑稀釋或乳膠化,藉由凹版塗佈機、計量棒式塗佈機、氣刀塗佈機、輥輪塗佈機等塗佈,將塗佈剝離劑之剝離板片供於常溫下或加熱下,或者,以電子線硬化形成剝離劑層即可。 The surface of the film or the like which is the base of the release film is subjected to a release treatment by using the above-mentioned release agent, and the release agent can be directly diluted with a solvent or diluted with a solvent or by a latex, by a gravure coater or a meter bar coater. The air knife coating machine, the roll coater, and the like may be applied, and the release sheet coated with the release agent may be supplied at a normal temperature or under heating, or may be cured by electron beam to form a release agent layer.
此外,亦可藉由濕式層壓或乾式層壓、熱熔融層壓、熔融擠出層壓、共擠出加工等進行薄膜的層積調整剝離薄膜的表面張力。即,亦可使至少一方的面的表面張力,在於作為與上述剝離薄膜的樹脂膜形成層接觸之面較佳的範圍內的薄膜,使該面成為與樹脂膜形成層接觸之面,製造與其他的薄膜層積之層積體,作為剝離薄膜。 Further, the surface tension of the release film may be adjusted by lamination of the film by wet lamination or dry lamination, hot melt lamination, melt extrusion lamination, coextrusion processing or the like. In other words, the surface tension of at least one of the surfaces of the surface which is in contact with the resin film forming layer of the release film is such that the surface is in contact with the resin film forming layer, and the surface is formed. A laminate of other thin film layers is used as a release film.
(樹脂膜形成層) (resin film forming layer)
對樹脂膜形成層至少要求的功能,係(1)板片形狀維持性、(2)初期接著性及(3)硬化性。 At least the functions required for the resin film forming layer are (1) sheet shape maintenance, (2) initial adhesion, and (3) hardenability.
對樹脂膜形成層,可藉由添加膠合劑成分賦予(1)板片形狀維特性及(3)硬化性,膠合劑成分,可使用含有聚合物成分(A)及硬化性成分(B)之第1膠合劑成分或含有兼具(A)成分及(B)成分的性質之硬化性聚合物成分(AB)之第2膠合劑成分。 The resin film forming layer can be provided with (1) sheet shape dimensional properties and (3) hardenability, and a binder component, and a polymer component (A) and a curable component (B) can be used by adding a binder component. The first binder component or the second binder component containing the curable polymer component (AB) having the properties of the components (A) and (B).
再者,直到使樹脂膜形成層硬化之間,暫時接著於工件之功能之(2)初期接著性,可為感壓接著性,亦可係藉由熱軟化接著之性質。(2)初期接著性,通常可藉由膠合劑成分的諸特性,或後述之無機填充劑(C)的調合量之調整等控制。 Further, the (2) initial adhesion which is temporarily followed by the function of the workpiece until the resin film formation layer is cured may be pressure-sensitive adhesiveness or may be followed by thermal softening. (2) The initial adhesion property can be controlled by the characteristics of the binder component or the adjustment of the blending amount of the inorganic filler (C) to be described later.
(第1粘合劑成分) (first binder component)
第1膠合劑成分,係藉由含有聚合物成分(A)與硬化性成分(B),賦予樹脂膜形成層板片形狀維持性及硬化性。再者,為方便區別第1膠合劑成分、與第2和膠合劑成分之故,不含有硬化性聚合物成分(AB)。 The first binder component is formed by providing the polymer film (A) and the curable component (B) to form a layer shape maintaining property and curability of the resin film. Further, in order to facilitate the distinction between the first binder component and the second binder component, the curable polymer component (AB) is not contained.
(A)聚合物成分 (A) polymer component
聚合物成分(A),係以賦予樹脂膜形成層板片形狀維特性為主要目的而添加於樹脂膜形成層。 The polymer component (A) is added to the resin film forming layer for the main purpose of imparting shape characteristics to the resin film forming layer sheet.
為達成上述目的,聚合物成分(A)的重量平均分子量(Mw),通常為20,000以上,以20,000~3,000,000為佳。重量平均分子量(Mw)之值,係以凝膠滲透層析法(GPC)(聚苯乙烯標準)測定時之值。藉由此方法的測定,例如,係使用於TOSO公司製的高速GPC裝置「HLC-8120GPC」,將高速管柱「TSK gurd column HXL-H」、「TSK Gel GMHXL」、「TSK Gel G2000 HXL」(以上,均為TOSO公司製),以此順序聯接者,管柱溫度:40℃,輸液速度:1.0mL/分的條件,以偵測器作為示差折射計進行。 In order to achieve the above object, the weight average molecular weight (Mw) of the polymer component (A) is usually 20,000 or more, preferably 20,000 to 3,000,000. The value of the weight average molecular weight (Mw) is a value measured by gel permeation chromatography (GPC) (polystyrene standard). For the measurement by this method, for example, the high-speed GPC device "HLC-8120GPC" manufactured by TOSO Corporation is used, and the high-speed column "TSK gurd column H XL -H", "TSK Gel GMH XL ", and "TSK Gel G2000" are used. H XL ” (above, all manufactured by TOSO), in this order, the column temperature: 40 ° C, infusion speed: 1.0 mL / min, with the detector as a differential refractometer.
再者,為方便與後述之硬化性聚合物(AB)區別,聚合物成分(A)不具有後述的硬化機能官能基。 Further, in order to facilitate the distinction from the curable polymer (AB) to be described later, the polymer component (A) does not have a curing functional group to be described later.
聚合物成分(A),可使用丙烯酸系聚合物、聚酯、苯氧基樹脂(為方便與後述之硬化性聚合物(AB)區別之故,限於不具有環氧基者。)、聚碳酸酯、聚醚、聚氨酯、聚矽氧烷、橡膠系聚合物等。此外,亦可為該等的2種以上鍵結者,例如,具有羥基的丙烯聚合物的丙烯酸多元醇,與於分子末端具有異氰酸酯基的尿烷預聚合物反應而得之丙烯酸尿烷樹脂等。再 者,包含2種以上鍵結的聚合物,亦可將該等的2種以上組合使用。 As the polymer component (A), an acrylic polymer, a polyester, or a phenoxy resin (for convenience of being distinguished from a curable polymer (AB) to be described later, and being limited to those having no epoxy group) can be used. Ester, polyether, polyurethane, polyoxyalkylene, rubber-based polymer, and the like. Further, it may be an acrylic urethane resin obtained by reacting an acrylic polyol having a propylene polymer having a hydroxyl group with a urethane prepolymer having an isocyanate group at a molecular terminal, etc., for example, such as two or more kinds of bonds. . again A polymer containing two or more types of bonds may be used in combination of two or more kinds.
(A1)丙烯酸系聚合物 (A1) acrylic polymer
聚合物成分(A),可良好地使用丙烯酸系聚合物(A1)。丙烯酸系聚合物(A1)的玻璃轉移溫度(Tg),以-60~50℃為佳,以-50~40℃更佳,進一步以-40~30℃的範圍為佳。丙烯酸系聚合物(A1)的玻璃轉移溫度過高,則樹脂膜形成層的接著性降低,而會發生無法轉印於工件,或者於轉印後樹脂膜形成層或將樹脂膜形成層硬化而得到的樹脂膜會從工件剝離等的異常。此外,丙烯酸系聚合物(A1)的玻璃轉移溫度過低,則有樹脂膜形成層與支持板片的剝離力變大而有發生樹脂膜形成層的轉印不良的情形。 As the polymer component (A), the acrylic polymer (A1) can be preferably used. The glass transition temperature (Tg) of the acrylic polymer (A1) is preferably -60 to 50 ° C, more preferably -50 to 40 ° C, and further preferably in the range of -40 to 30 ° C. When the glass transition temperature of the acrylic polymer (A1) is too high, the adhesion of the resin film forming layer is lowered, and the film may not be transferred to the workpiece, or the resin film forming layer may be formed after the transfer or the resin film forming layer may be cured. The obtained resin film may be abnormally peeled off from the workpiece. In addition, when the glass transition temperature of the acrylic polymer (A1) is too low, the peeling force of the resin film forming layer and the support sheet is increased, and the transfer failure of the resin film forming layer may occur.
丙烯酸系聚合物(A1)的重量平均分子量,以100,000~1,500,000為佳。丙烯酸系聚合物(A1)的重量平均分子量過高,則樹脂膜形成層的接著性降低,而會發生無法轉印於工件,或者於轉印後樹脂膜形成層或樹脂膜會從工件剝離等的異常。此外,丙烯酸系聚合物(A1)的重量平均分子量過低,則樹脂膜形成層與支持板片的密著性變高,而有發生樹脂膜形成層的轉印不良之情形。 The weight average molecular weight of the acrylic polymer (A1) is preferably from 100,000 to 1,500,000. When the weight average molecular weight of the acrylic polymer (A1) is too high, the adhesion of the resin film forming layer is lowered, and the film may not be transferred to the workpiece, or the resin film forming layer or the resin film may be peeled off from the workpiece after the transfer. Anomaly. In addition, when the weight average molecular weight of the acrylic polymer (A1) is too low, the adhesion between the resin film forming layer and the support sheet is high, and the transfer failure of the resin film forming layer may occur.
丙烯酸系聚合物(A1),至少於構成之單體,包含(甲基)丙烯酸酯。 The acrylic polymer (A1) contains at least a (meth) acrylate, at least a constituent monomer.
(甲基)丙烯酸酯,可舉烷基之碳數為1~18之烷基之(甲基)丙烯酸酯,具體可舉,(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸2-乙基 己酯等;具有環狀骨架的(甲基)丙烯酸酯,具體可舉,(甲基)丙烯酸環烷酯、(甲基)丙烯酸苄酯、(甲基)丙烯酸異冰片酯、(甲基)丙烯酸二環戊基酯、(甲基)丙烯酸二環戊烯酯、(甲基)丙烯酸二環戊烯氧乙酯、醯亞胺(甲基)丙烯酸酯等。此外,例示作為後述之具有羥基之單體、具有羧基之單體、具有胺基之單體之中,可例示為(甲基)丙烯酸酯者。 The (meth) acrylate may, for example, be a (meth) acrylate having an alkyl group having an alkyl group having 1 to 18 carbon atoms, and specific examples thereof include methyl (meth)acrylate and ethyl (meth)acrylate. Propyl methacrylate, butyl (meth)acrylate, 2-ethyl (meth)acrylate a hexyl ester or the like; a (meth) acrylate having a cyclic skeleton, and specific examples thereof include a cycloalkyl (meth)acrylate, a benzyl (meth)acrylate, an isobornyl (meth)acrylate, and a (meth) group. Dicyclopentyl acrylate, dicyclopentenyl (meth)acrylate, dicyclopenteneoxyethyl (meth)acrylate, quinone imine (meth) acrylate, and the like. In addition, among the monomers having a hydroxyl group, a monomer having a carboxyl group, and a monomer having an amine group, which will be described later, may be exemplified as (meth)acrylate.
再者,於本說明書,(甲基)丙烯酸,係以包含丙烯酸及甲基丙烯酸二者的意義使用。 Further, in the present specification, (meth)acrylic acid is used in the sense of containing both acrylic acid and methacrylic acid.
構成丙烯酸系聚合物(A1)的單體,亦可使用具有羥基之單體。藉由使用如此的單體,可於丙烯酸系聚合物(A1)導入羥基,樹脂膜形成層另外含有能量線硬化性成分(B2)時,可提升此與丙烯酸系聚合物(A1)的相溶性。具有羥基之單體,可舉(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯等的具有羥基之(甲基)丙烯酸酯;N-羥甲基(甲基)丙烯醯胺等。 As the monomer constituting the acrylic polymer (A1), a monomer having a hydroxyl group can also be used. By using such a monomer, a hydroxyl group can be introduced into the acrylic polymer (A1), and when the resin film forming layer further contains the energy ray-curable component (B2), the compatibility with the acrylic polymer (A1) can be improved. . The monomer having a hydroxyl group may be a (meth) acrylate having a hydroxyl group such as 2-hydroxyethyl (meth)acrylate or 2-hydroxypropyl (meth)acrylate; N-hydroxymethyl (methyl) Acrylamide and the like.
構成丙烯酸系聚合物(A1)的單體,亦可使用具有羧基之單體。藉由使用如此的單體,可於丙烯酸系聚合物(A1)導入羧基,樹脂膜形成層另外含有能量線硬化性成分(B2)時,可提升此與丙烯酸系聚合物(A1)的相溶性。具有羧基的單體,可舉2-(甲基)丙烯醯氧乙基間苯二甲酸酯、2-(甲基)丙烯醯氧丙基間苯二甲酸酯等的具有羧基的(甲基)丙烯酸酯;(甲基)丙烯酸、馬來酸、富馬酸、依康酸等。使用環氧系熱硬化性成分作為後述之硬化性成分(B)時,由於羧基會與環氧系熱硬化性成分中的環氧基反應,故具有羧基之單體的使用量少較佳。 As the monomer constituting the acrylic polymer (A1), a monomer having a carboxyl group can also be used. By using such a monomer, a carboxyl group can be introduced into the acrylic polymer (A1), and when the resin film forming layer further contains the energy ray-curable component (B2), the compatibility with the acrylic polymer (A1) can be improved. . The monomer having a carboxyl group may have a carboxyl group such as 2-(meth)acryloyloxyethyl isophthalate or 2-(meth)acryloxypropyl isophthalate. Acrylate; (meth)acrylic acid, maleic acid, fumaric acid, isaconic acid, and the like. When the epoxy-based thermosetting component is used as the curable component (B) to be described later, since the carboxyl group reacts with the epoxy group in the epoxy-based thermosetting component, the amount of the monomer having a carboxyl group is preferably small.
構成丙烯酸系聚合物(A1)的單體,亦可使用具有胺 基的單體。如此的單體,可舉單乙基胺基(甲基)丙烯酸酯等的具有胺基的(甲基)丙烯酸酯等。 The monomer constituting the acrylic polymer (A1) may also have an amine Base monomer. Examples of such a monomer include an amino group-containing (meth) acrylate such as monoethylamino group (meth) acrylate.
構成丙烯酸系聚合物(A1)的單體,亦可使用其他的醋酸乙烯酯、苯乙烯、乙烯、α-烯烴等。 As the monomer constituting the acrylic polymer (A1), other vinyl acetate, styrene, ethylene, α-olefin or the like can be used.
丙烯酸系聚合物(A1)亦可架橋。架橋,係架橋前的丙烯酸系聚合物(A1)具有羥基等的架橋性官能基,藉由對用於形成樹脂膜形成層的組成物中添加架橋劑,架橋性官能基與架橋劑所具有的官能基反應進行架橋。藉由使丙烯酸系聚合物(A1)架橋,可調節樹脂膜形成層凝聚力。 The acrylic polymer (A1) can also be bridged. The bridging, the acrylic polymer (A1) in front of the bridging bridge has a bridging functional group such as a hydroxyl group, and a bridging agent, a bridging functional group and a bridging agent are added to the composition for forming the resin film forming layer. The functional group reaction is bridged. The resin film forming layer cohesive force can be adjusted by bridging the acrylic polymer (A1).
架橋劑,可舉有機多價異氰酸酯化合物、有機多價醯亞胺化合物等。 The bridging agent may, for example, be an organic polyvalent isocyanate compound or an organic polyvalent quinone imine compound.
有機多價異氰酸酯化合物,可舉芳香族多價異氰酸酯化合物、脂肪族多價異氰酸酯化合物、脂環族多價異氰酸酯化合物及該等有機多價異氰酸酯化合物之三聚物、及使該等有機多價異氰酸酯化合物與多元醇化合物反應所得之末端異氰酸酯預聚物等。 The organic polyvalent isocyanate compound may, for example, be an aromatic polyvalent isocyanate compound, an aliphatic polyvalent isocyanate compound, an alicyclic polyvalent isocyanate compound, a terpolymer of the organic polyvalent isocyanate compound, and the organic polyvalent isocyanate. A terminal isocyanate prepolymer obtained by reacting a compound with a polyol compound or the like.
有機多價異氰酸酯化合物,具體可舉,2,4-甲苯二異氰酸酯、2,6-甲苯二異氰酸酯、1,3-二甲苯二異氰酸酯、1,4-二甲苯二異氰酸酯、二苯基甲烷-4,4'-二異氰酸酯、二苯基甲烷-2,4'-二異氰酸酯、3-甲基二苯基甲烷二異氰酸酯、六亞甲基二異氰酸酯、異佛爾酮二異氰酸酯、二環己基甲烷-4,4'-二異氰酸酯、二環己基甲烷-2,4'-二異氰酸酯、賴氨酸異氰酸酯、及該等的多元醇加成物。 The organic polyvalent isocyanate compound may specifically be 2,4-toluene diisocyanate, 2,6-toluene diisocyanate, 1,3-xylene diisocyanate, 1,4-dimethylbenzene diisocyanate or diphenylmethane-4. , 4'-diisocyanate, diphenylmethane-2,4'-diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane- 4,4'-diisocyanate, dicyclohexylmethane-2,4'-diisocyanate, lysine isocyanate, and such polyol adducts.
有機多價醯亞胺化合物,具體可舉,N,N'-二苯基 甲烷-4,4'-雙(1-氮丙啶羧醯胺)、三羥甲基丙烷-三-β-氮丙啶基丙酸酯、四羥甲基甲烷-三-β-氮丙啶基丙酸酯及N,N'-甲苯-2,4-雙(1-氮丙啶羧醯胺)三乙烯三聚氰胺等。 Organic polyvalent quinone imine compound, specifically, N, N'-diphenyl Methane-4,4'-bis(1-aziridine carboxamide), trimethylolpropane-tri-beta-aziridine propionate, tetramethylolethane-tri-beta-aziridine Propionate and N,N'-toluene-2,4-bis(1-aziridinecarboxamide) triethylene melamine and the like.
架橋劑,對架橋前之丙烯酸系聚合物(A1)100質量部,通常為0.01~20質量部,以0.1~10質量部為佳,以0.5~5質量部的比例使用更佳。 The bridging agent is usually 0.01 to 20 parts by mass of the acrylic polymer (A1) before bridging, preferably 0.1 to 10 parts by mass, and more preferably 0.5 to 5 parts by mass.
在於本發明,關於構成樹脂膜形成層的成分的含量的態樣,將聚合物成分(A)的含量作為基準決定時,聚合物成分(A)為架橋的丙烯酸系聚合物時,作為其基準的含量,係架橋前的丙烯酸系聚合物的含量。 In the aspect of the present invention, when the content of the component constituting the resin film forming layer is determined based on the content of the polymer component (A), when the polymer component (A) is a bridging acrylic polymer, the standard is used as a reference. The content of the acrylic polymer before bridging.
(A2)非丙烯酸系樹脂 (A2) non-acrylic resin
此外,聚合物成分(A),可從聚酯、苯氧基樹脂(為方便區別後述之硬化性聚合物(AB)之故,限於不具有環氧基者。)、聚碳酸酯、聚醚、聚氨酯、聚矽氧烷、橡膠系聚合物或由該等的2種以上鍵結選擇非丙烯酸系樹脂(A2)之1種單獨或組合2種以上使用。如此之樹脂,以重量平均分子量為20,000~100,000者為佳,以20,000~80,000者更佳。 Further, the polymer component (A) may be selected from polyesters and phenoxy resins (for the purpose of facilitating the discrimination of the curable polymer (AB) described later, it is limited to those having no epoxy group), polycarbonate, polyether. One type or a combination of two or more types selected from the group consisting of a polyurethane, a polysiloxane, a rubber polymer, and a non-acrylic resin (A2). Such a resin is preferably a weight average molecular weight of 20,000 to 100,000, more preferably 20,000 to 80,000.
非丙烯酸系樹脂(A2)之玻璃轉移溫度,以-30~150℃為佳,以-20~120℃的範圍更佳。 The glass transition temperature of the non-acrylic resin (A2) is preferably -30 to 150 ° C, more preferably -20 to 120 ° C.
將非丙烯酸系樹脂(A2),與上述丙烯酸系聚合物(A1)並用時,使用樹脂膜形成用板片,對工件轉印樹脂膜形成層時,可容易地進行支持板片與樹脂膜形成層之層間剝離,進一步可使樹脂膜形成層追隨轉印面而可抑制發生空隙等。 When a non-acrylic resin (A2) is used in combination with the acrylic polymer (A1), a sheet for forming a resin film is used, and when a resin film is formed on a workpiece, the support sheet and the resin film can be easily formed. When the layers of the layers are peeled off, the resin film forming layer can follow the transfer surface to suppress the occurrence of voids and the like.
將非丙烯酸系樹脂(A2),與上述丙烯酸系聚合物 (A1)並用時,非丙烯酸系樹脂(A2)的含量,在於非丙烯酸系樹脂(A2)與丙烯酸系聚合物(A1)的質量比(A2:A1),通常為1:99~60:40,以1:99~30:70的範圍為佳。藉由使非丙烯酸系樹脂(A2)的含量在此範圍,則可得上述效果 Non-acrylic resin (A2), and the above acrylic polymer When the (A1) is used in combination, the content of the non-acrylic resin (A2) is the mass ratio (A2: A1) of the non-acrylic resin (A2) to the acrylic polymer (A1), and is usually 1:99 to 60:40. It is better to range from 1:99 to 30:70. By setting the content of the non-acrylic resin (A2) in this range, the above effects can be obtained.
(B)硬化性成分 (B) hardening ingredients
硬化性成分(B),係以賦予樹脂膜形成層硬化性為主要目的而添加於樹脂膜形成層。硬化性成分(B),可使用熱硬化性成分(B1)或能量線硬化性成分(B2)。此外,亦可組合該等使用。熱硬化性成分(B1),至少含有可藉由加熱反應的官能基之化合物。此外,能量線硬化性成分(B2),係含有可藉由能量線的照射而反應的官能基之化合物(B21),受到紫外線、電子線等的能量線的照射會聚合硬化。藉由該等硬化性成分所具有的官能基相互反應,形成三次元網目構造而實現硬化。硬化性成分(B),由於係與聚合物成分(A)組合使用,故由抑制用於形成樹脂膜形成層的塗層用組成物的黏度,提升處理性等的觀點,通常,其重量平均分子量(Mw)為10,000以下,以100~10,000為佳。 The curable component (B) is added to the resin film forming layer for the main purpose of imparting layer hardenability to the resin film. As the curable component (B), a thermosetting component (B1) or an energy ray-curable component (B2) can be used. In addition, these uses can also be combined. The thermosetting component (B1) contains at least a compound which can be reacted by heating. In addition, the energy ray-curable component (B2) is a compound (B21) containing a functional group reactive by irradiation with an energy ray, and is polymerized and cured by irradiation with an energy ray such as an ultraviolet ray or an electron beam. The functional groups based on the curable components react with each other to form a three-dimensional network structure to achieve hardening. Since the curable component (B) is used in combination with the polymer component (A), the weight average is generally suppressed from the viewpoint of suppressing the viscosity of the coating composition for forming the resin film forming layer and improving the handleability. The molecular weight (Mw) is 10,000 or less, preferably 100 to 10,000.
(B1)熱硬化性成分 (B1) thermosetting component
熱硬化性成分,例如,以環氧系熱硬化性成分為佳。 The thermosetting component is preferably an epoxy thermosetting component, for example.
環氧系熱硬化性成分,使用包含具有環氧基之化合物(B11),組合具有環氧基的化合物(B11)與熱硬化劑(B12)者為佳。 The epoxy-based thermosetting component is preferably a compound (B11) having an epoxy group and a compound (B11) having an epoxy group and a thermosetting agent (B12).
(B11)具有環氧基之化合物 (B11) a compound having an epoxy group
具有環氧基之化合物(B11)(以下,有稱為「環氧化合物 (B11)」之情形。),可使用先前習知者。具體可舉,多官能系環氧樹脂、雙酚A二縮水甘油醚或其加氫物、鄰甲酚酚醛環氧樹脂、二環戊二烯型環氧樹脂、聯苯型環氧樹脂、雙酚A型環氧樹脂、雙酚F型環氧樹脂、亞苯基骨架型環氧樹脂等,於分子中具有2官能以上的環氧化合物。該等可以1種單獨或組合2種以上使用。 Compound having an epoxy group (B11) (hereinafter, referred to as "epoxy compound" (B11)" situation. ), the prior learners can be used. Specifically, a polyfunctional epoxy resin, bisphenol A diglycidyl ether or a hydrogenated product thereof, an o-cresol novolac epoxy resin, a dicyclopentadiene type epoxy resin, a biphenyl type epoxy resin, and a double A phenol A type epoxy resin, a bisphenol F type epoxy resin, a phenylene skeleton type epoxy resin, etc. have a bifunctional or more epoxy compound in a molecule. These may be used alone or in combination of two or more.
使用環氧化合物(B11)時,於樹脂膜形成層,對聚合物成分(A)100質量部,包含環氧化合物(B11)1~1500質量部為佳,包含3~1200質量部更佳。環氧化合物(B11)少,則有降低在於樹脂膜形成層之硬化後之接著性之傾向。此外,環氧化合物(B11)多,則樹脂膜形成層與支持板片的剝離力變高,而有發生樹脂膜形成層的轉印不良之情形。 When the epoxy compound (B11) is used, the resin film forming layer is preferably one part by mass of the epoxy resin compound (B11) in an amount of from 1 to 1,500 parts by mass, and more preferably from 3 to 1200 parts by mass. When the amount of the epoxy compound (B11) is small, there is a tendency that the adhesion of the resin film forming layer after curing is lowered. Further, when the amount of the epoxy compound (B11) is large, the peeling force of the resin film forming layer and the supporting sheet is increased, and the transfer failure of the resin film forming layer may occur.
(B12)熱硬化劑 (B12) Thermal hardener
熱硬化劑(B12),係對環氧化合物(B11)作用作為硬化劑。較佳的熱硬化劑,可舉於1分子中具有2個以上可與環氧基反應的官能基之化合物。該官能基,可舉酚性羥基、醇性羥基、胺基、羧基及酸酐等。該等之中,較佳的可舉酚性羥基、胺基、酸酐等,更佳的可舉酚性羥基、胺基。 The heat hardener (B12) acts as a hardener for the epoxy compound (B11). A preferred thermosetting agent is a compound having two or more functional groups reactive with an epoxy group in one molecule. The functional group may, for example, be a phenolic hydroxyl group, an alcoholic hydroxyl group, an amine group, a carboxyl group or an acid anhydride. Among these, a phenolic hydroxyl group, an amine group, an acid anhydride, etc. are preferable, and a phenolic hydroxyl group and an amine group are more preferable.
酚系硬化劑的具體例,可舉多官能系酚醛樹脂、雙酚、酚醛型酚樹脂、二環戊二烯系酚醛樹脂、新酚醛型酚樹脂、芳烷基酚樹脂。 Specific examples of the phenolic curing agent include a polyfunctional phenol resin, a bisphenol, a novolac phenol resin, a dicyclopentadiene phenol resin, a neophenolic phenol resin, and an aralkyl phenol resin.
胺系硬化劑之具體例,可舉DICY(雙氰胺)。 Specific examples of the amine-based curing agent include DICY (dicyandiamide).
該等可以1種單獨或混合2種以上使用。 These may be used alone or in combination of two or more.
熱硬化劑(B12)的含量,對環氧化合物(B11)100質 量部,以0.1~500質量部為佳,以1~200質量部更佳。熱硬化劑的含量少,則硬化後的接著性有降低的傾向。 The content of the heat hardener (B12) is 100% for the epoxy compound (B11) The quantity is preferably 0.1 to 500 mass parts, and more preferably 1 to 200 mass parts. When the content of the heat curing agent is small, the adhesion after curing tends to decrease.
(B13)硬化促進劑 (B13) hardening accelerator
亦可將硬化促進劑(B13),用於調整樹脂膜形成層的熱硬化速度。尤其,在使用環氧系熱硬化性成分時最好使用硬化促進劑(B13)作為熱硬化性成分(B1)。 The hardening accelerator (B13) may also be used to adjust the heat hardening rate of the resin film forming layer. In particular, when an epoxy-based thermosetting component is used, it is preferable to use a curing accelerator (B13) as the thermosetting component (B1).
較佳的硬化促進劑,可舉三亞乙基二胺、芐基二甲基胺、三乙醇胺、二甲基胺基乙醇、三(二甲基胺基甲基)酚等的3級胺類;2-甲基咪唑、2-苯基咪唑、2-苯基4-甲基咪唑、2-苯基-4,5-二羥基甲基咪唑、2-苯基4-甲基5-羥基甲基咪唑等的咪唑類;三丁膦、二苯膦、三苯膦等的有機膦類;四苯基鏻四苯基硼酸酯、三苯膦四苯基硼酸酯等的四苯基硼酸鹽等。該等可以1種單獨或混合2種以上使用。 Preferred hardening accelerators include tertiary amines such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, and tris(dimethylaminomethyl)phenol; 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl4-methyl 5-hydroxymethyl Imidazoles such as imidazole; organophosphines such as tributylphosphine, diphenylphosphine, triphenylphosphine; tetraphenylborate such as tetraphenylphosphonium tetraphenyl borate or triphenylphosphine tetraphenyl borate Wait. These may be used alone or in combination of two or more.
硬化促進劑(B13),對環氧化合物(B11)及熱硬化劑(B12)的合計量100質量部,以0.01~10質量部為佳,進一步以0.1~1質量部的量包含為佳。藉由將硬化促進劑(B13)以上述範圍的量含有,即使暴露於高溫度高濕度下亦具有優良的接著性,即使暴露於嚴酷的回火條件時亦可達成很高的可靠度。藉由添加硬化促進劑(B13),可提升樹脂膜形成層在硬化後的接著性。硬化促進劑(B13)的含量越多如此的作用越強。 The curing accelerator (B13) is preferably contained in an amount of 0.01 to 10 parts by mass in total of 100 parts by mass of the epoxy compound (B11) and the thermosetting agent (B12), and more preferably in an amount of 0.1 to 1 part by mass. By containing the hardening accelerator (B13) in an amount within the above range, it has excellent adhesion even when exposed to high temperature and high humidity, and high reliability can be achieved even when exposed to severe tempering conditions. By adding the hardening accelerator (B13), the adhesion of the resin film forming layer after hardening can be improved. The more the content of the hardening accelerator (B13), the stronger the effect.
(B2)能量線硬化性成分 (B2) energy line hardening component
藉由樹脂膜形成層含有能量線硬化性成分,無須進行需要大量的能源及長時間的熱硬化步驟而可進行樹脂膜形成層的硬化。藉此,可圖謀製造成本的減少。 Since the resin film forming layer contains the energy ray-curable component, the resin film forming layer can be cured without requiring a large amount of energy and a long-term heat curing step. Thereby, the manufacturing cost can be reduced.
能量線硬化性成分,可單獨使用具有藉由能量線的照射而反應之官能基之化合物(B21),惟使用組合具有藉由能量線的照射而反應之官能基之化合物(B21)與光聚合起始劑(B22)者為佳。 As the energy ray-curable component, a compound (B21) having a functional group reactive by irradiation with an energy ray can be used alone, but a compound (B21) having a functional group reactive by irradiation with an energy ray is used and photopolymerization is used. The initiator (B22) is preferred.
(B21)具有藉由能量線的照射而反應之官能基之化合物 (B21) a compound having a functional group reactive by irradiation of an energy ray
具有藉由能量線的照射而反應之官能基之化合物(B21)(以下,有稱為「能量線反應性化合物(B21)」之情形。),具體可舉,三羥甲基丙烷三丙烯酸酯、異戊四醇三丙烯酸酯、異戊四醇四丙烯酸酯、二異戊四醇單羥基五丙烯酸酯、二異戊四醇六丙烯酸酯或1,4-丁二醇二丙烯酸酯、1,6-己二醇二丙烯酸酯等的丙烯酸酯系化合物,此外,可舉寡聚酯丙烯酸酯、尿烷丙烯酸酯系寡聚物、環氧基丙烯酸酯、聚醚丙烯酸酯及依康酸寡聚物等的具有丙烯酸酯系化合物等的聚合構造之丙烯酸酯化合物,而分子量相對較低者。如此之化合物,於分子內至少具有1個聚合性雙鍵鍵結。 A compound (B21) having a functional group which is reacted by irradiation with an energy ray (hereinafter referred to as "energy ray-reactive compound (B21)"), specifically, trimethylolpropane triacrylate , pentaerythritol triacrylate, isoamyl alcohol tetraacrylate, diisopentaerythritol monohydroxy pentaacrylate, diisopentaerythritol hexaacrylate or 1,4-butanediol diacrylate, 1, An acrylate-based compound such as 6-hexanediol diacrylate, and examples thereof include oligoester acrylate, urethane acrylate oligomer, epoxy acrylate, polyether acrylate, and itaconic acid oligomerization. An acrylate compound having a polymer structure such as an acrylate compound or the like, and having a relatively low molecular weight. Such a compound has at least one polymerizable double bond bond in the molecule.
使用能量線反應性化合物(B21)時,於樹脂膜形成層,對聚合物成分(A)100質量部,包含1~1500質量部能量線反應性化合物(B21)為佳,包含3~1200質量部更佳。 When the energy ray-reactive compound (B21) is used, the resin film-forming layer preferably contains 1 to 1500 parts by mass of the energy ray-reactive compound (B21) per 100 parts by mass of the polymer component (A), and contains 3 to 1200 masses. Better department.
(B22)光聚合起始劑 (B22) Photopolymerization initiator
藉由對能量線反應性化合物(B21),組合光聚合起始劑(B22),可縮短聚合硬化時間,並且減少光線照射量。 By combining the photopolymerization initiator (B21) with the photopolymerization-reactive compound (B21), the polymerization hardening time can be shortened, and the amount of light irradiation can be reduced.
如此之光聚合起始劑(B22),具體可舉,二苯甲酮、苯乙酮、安息香、安息香甲醚、安息香乙醚、安息香異丙醚、 安息香異丁醚、安息香安息香酸、安息香安息香酸甲酯、安息香二甲縮酮、2,4-二乙基噻吨酮、α-羥環己基苯酮、芐基二苯硫醚、硫化四甲基秋蘭姆、偶氮雙異丁腈、苯偶醯、二苯偶醯、雙乙醯、1,2-二苯基甲烷。2-羥基-2-甲基-1-[4-(1-甲基乙烯基)苯基]丙酮、2,4,6-三甲基苯偶醯二苯基氧化膦及β-氯蒽醌等。光聚合起始劑(B22),可以1種單獨或組合2種以上使用。 Such a photopolymerization initiator (B22), specifically, benzophenone, acetophenone, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, Benzoin isobutyl ether, benzoin benzoic acid, benzoin benzoate methyl ester, benzoin dimethyl ketal, 2,4-diethyl thioxanthone, α-hydroxycyclohexyl benzophenone, benzyl diphenyl sulfide, sulfurized tetramethyl Kiryulam, azobisisobutyronitrile, benzoin, diphenylene, diacetyl, 1,2-diphenylmethane. 2-hydroxy-2-methyl-1-[4-(1-methylvinyl)phenyl]acetone, 2,4,6-trimethylbenzoin diphenylphosphine oxide and β-chloropurine Wait. The photopolymerization initiator (B22) may be used alone or in combination of two or more.
光聚合起始劑(B22)之調合比例,對能量線反應性化合物(B21)100質量,包含0.1~10質量部為佳,包含1~5質量部更佳。 The blending ratio of the photopolymerization initiator (B22) is preferably 0.1 to 10 parts by mass, and more preferably 1 to 5 parts by mass, based on 100 parts by mass of the energy ray-reactive compound (B21).
光聚合起始劑(B22)之調合比例未滿0.1個質量部,則有光聚合不足而無法得到滿足的硬化性之情形,超過10質量部,則生成為無貢獻於光聚合之殘留物,會成為異常之原因。 When the blending ratio of the photopolymerization initiator (B22) is less than 0.1 parts by mass, the photopolymerization is insufficient and the curable property cannot be satisfied. When the blending ratio exceeds 10 parts by mass, the residue is not contributed to photopolymerization. Will become the cause of the anomaly.
(第2膠合劑成分) (2nd adhesive component)
第2膠合劑成分,藉由含有硬化性聚合物成分(AB),賦予樹脂膜形成層板片形狀維持性及硬化性。 The second binder component is provided with a curable polymer component (AB) to form a layer shape maintaining property and curability of the resin film.
(AB)硬化性聚合物成分 (AB) hardenable polymer component
硬化性聚合物成分,係具有硬化機能官能基之聚合物。硬化機能官能基,係可互相反應構成三次元網目構造的官能基,可舉藉由加熱反應的官能基,或藉由能量線反應的官能基。 The curable polymer component is a polymer having a functional group of a hardening function. The hardening functional group is a functional group which can react with each other to form a three-dimensional network structure, and may be a functional group which is reacted by heating or a functional group which is reacted by an energy ray.
硬化機能官能基,可加成於成為硬化性聚合物(AB)之骨架的連續構造的單位中,亦可加成於末端。硬化機能官能基,加成於成為硬化性聚合物成分(AB)之骨架的連續構造的單位中時,硬化機能官能基可加成於側鏈,亦可直接加成於主鏈。硬化性聚合物成分(AB)之重量平均分子量(Mw),由對達成賦予樹 脂膜形成層板片形狀維特性的目的的觀點,通常為20,000以上。 The hardening functional group may be added to the unit of continuous structure which becomes the skeleton of the curable polymer (AB), and may be added to the terminal. When the functional group of the curing function is added to a unit of a continuous structure which becomes a skeleton of the curable polymer component (AB), the functional group of the curing function may be added to the side chain or may be directly added to the main chain. The weight average molecular weight (Mw) of the curable polymer component (AB) The viewpoint of the purpose of the shape-dimensional property of the sheet of the lipid film formation layer is usually 20,000 or more.
藉由加熱反應之官能基,可舉環氧基。具有環氧基的硬化性聚合物成分(AB),可舉高分子量的含有環氧基之化合物,或具有環氧基的苯氧基樹脂。高分子量的含有環氧基之化合物,例如,揭示於日本特開2001-261789。 The epoxy group can be mentioned by heating the functional group of the reaction. The epoxy group-containing curable polymer component (AB) may be a high molecular weight epoxy group-containing compound or a phenoxy resin having an epoxy group. A high molecular weight compound containing an epoxy group is disclosed, for example, in JP-A-2001-261789.
此外,與上述丙烯酸系聚合物(A1)同樣的聚合物,單體,亦可為使用具有環氧基的單體聚合者(含有環氧基之丙烯酸系聚合物)。具有環氧基的單體,可舉例如(甲基)丙烯酸縮水甘油酯等的具有縮水甘油基的(甲基)丙烯酸酯。 Further, the polymer similar to the above acrylic polymer (A1) may be a monomer polymerized with an epoxy group-containing monomer (an epoxy group-containing acrylic polymer). The monomer having an epoxy group may, for example, be a glycidyl group-containing (meth) acrylate such as glycidyl (meth)acrylate.
使用含有環氧基之丙烯酸系聚合物時,其較佳的態樣除了烷氧基之外與丙烯酸系聚合物(A1)相同。 When an acrylic polymer containing an epoxy group is used, the preferred aspect is the same as the acrylic polymer (A1) except for the alkoxy group.
使用具有環氧基的硬化性聚合物成分(AB)時,亦可與使用環氧系熱硬化性成分作為硬化性成分(B)之情形同樣地,並用熱硬化劑(B12)、硬化促進劑(B13)。 When a curable polymer component (AB) having an epoxy group is used, a thermosetting agent (B12) or a curing accelerator may be used in the same manner as in the case where an epoxy-based thermosetting component is used as the curable component (B). (B13).
藉由能量線反應之官能基,可舉(甲基)丙烯醯基。具有藉由能量線反應之官能基之硬化性聚合物成分(AB),係具有聚醚丙烯酸酯等的聚合構造的丙烯酸酯系化合物等,可使用高分子量者。 The functional group based on the energy ray reaction may, for example, be a (meth) acrylonitrile group. The curable polymer component (AB) having a functional group reactive by an energy ray is an acrylate-based compound having a polymerization structure such as polyether acrylate, and the like, and a high molecular weight can be used.
此外,亦可使用例如對具有在側鏈具有羥基等的官能基X的原料聚合物,與具有可與官能基X反應的官能基Y(例如,官能基X為羥基時,以異氰酸酯基等)及藉由能量線照射反應之具有官能基之低分子化合物反應而調製之聚合物。 Further, for example, a base polymer having a functional group X having a hydroxyl group or the like in a side chain and a functional group Y capable of reacting with the functional group X (for example, when the functional group X is a hydroxyl group, an isocyanate group or the like) may be used. And a polymer prepared by reacting a low molecular compound having a functional group by an energy ray irradiation reaction.
於此種情況,原料聚合物符合於上述丙烯酸系聚合物(A1) 時,該原料聚合物的較佳的態樣,與丙烯酸系聚合物(A1)相同。 In this case, the base polymer conforms to the above acrylic polymer (A1). The preferred aspect of the base polymer is the same as that of the acrylic polymer (A1).
使用具有藉由能量線反應之官能基之硬化性聚合物成分(AB)時,亦可與使用能量線硬化性成分(B2)之情形同樣地,並用光聚合起始劑(B22)。 When the curable polymer component (AB) having a functional group reactive by an energy ray is used, a photopolymerization initiator (B22) may be used in the same manner as in the case of using the energy ray-curable component (B2).
第2膠合劑成分,亦可與硬化性聚合物成分(AB)一併,含有上述聚合物成分(A)或硬化性成分(B)。 The second binder component may contain the polymer component (A) or the curable component (B) together with the curable polymer component (AB).
於樹脂膜形成層,在膠合劑成分之外,亦可含有以下的成分。 The resin film forming layer may contain the following components in addition to the binder component.
(C)無機填充劑 (C) inorganic filler
樹脂膜形成層,亦可含有無機填充劑(C)。藉由將無機填充劑(C)調合於樹脂膜形成層,可調整硬化後的樹脂膜中的熱膨脹係數,藉由將硬化後的樹脂膜的熱膨脹係數對工件最佳化,可提升是半導體裝置的可靠度。此外,亦可減低硬化後的樹脂膜的吸濕率。 The resin film forming layer may further contain an inorganic filler (C). By blending the inorganic filler (C) with the resin film forming layer, the coefficient of thermal expansion in the cured resin film can be adjusted, and the thermal expansion coefficient of the cured resin film can be optimized for the workpiece, thereby improving the semiconductor device. Reliability. Further, the moisture absorption rate of the resin film after hardening can also be reduced.
此外,將在於本發明之樹脂膜形成層硬化而得之樹脂膜,作用作為工件或將工件個片化之晶片的保護膜時,藉由對保護膜施以雷射標記,無機填充劑(C)露出在雷射光削去的部分,由於反射光擴散而呈現接近白色的顏色。藉此,樹脂膜形成層含有後述的著色劑(D)時,可得雷射標記部分與其他的部分的對比差,有使刻字變得明顯的效果。 In addition, when the resin film obtained by curing the resin film forming layer of the present invention acts as a protective film for a workpiece or a wafer in which a workpiece is formed, an inorganic filler (C) is applied to the protective film by laser marking. The portion exposed in the laser light is exposed to a white color due to the diffusion of the reflected light. Thereby, when the resin film forming layer contains the coloring agent (D) to be described later, the difference between the laser marking portion and the other portions can be obtained, and the lettering can be made conspicuous.
較佳的無機填充劑,可舉二氧化矽、氧化鋁、滑石粉、碳酸鈣、氧化鈦、氧化鐵、碳化矽、氮化硼等的粉末,將該等球形化之珠、單晶纖維及玻璃纖維等。該等之中,以二氧化矽填充劑及氧化鋁填充劑為佳。上述無機填充劑(C)可以 單獨或混合2種以上使用。 Preferred inorganic fillers include powders of cerium oxide, aluminum oxide, talc, calcium carbonate, titanium oxide, iron oxide, cerium carbide, boron nitride, etc., and spheroidized beads, single crystal fibers, and the like. Glass fiber, etc. Among these, a cerium oxide filler and an alumina filler are preferred. The above inorganic filler (C) can It can be used individually or in mixture of 2 or more types.
為更確實得到上述效果,無機填充劑(C)的含量的範圍,佔構成樹脂膜形成層的全固形分的100質量部的比例,以1~80質量部為佳,以20~75質量部更佳,以40~70質量部特別佳。 In order to obtain the above effect, the range of the content of the inorganic filler (C) accounts for 100 parts by mass of the total solid content of the resin film forming layer, preferably 1 to 80 parts by mass, and 20 to 75 parts by mass. Better, especially good at 40~70 quality.
(D)著色劑 (D) colorant
於樹脂膜形成層,可調合著色劑(D)。藉由調合著色劑,將半導體裝置組入機器時,可防止半導體裝置因周圍的裝置所發生的紅外線等而出錯。此外,藉由雷射標記等的手段,對樹脂膜上進行刻印時,有使文字、記號等的標記變得較容易辨識的效果。即,於形成有樹脂膜的半導體裝置或半導體晶片,係於樹脂膜的表面上通常以雷射標記法(藉由雷射光削去保護膜表面進行列印的方法)列印品號等,而藉由樹脂膜含有著色劑(D),而可充分得到樹脂膜被雷射光削去的部分與沒有削去的部分的對比差,而提升視認性。 In the resin film forming layer, the coloring agent (D) can be adjusted. When the semiconductor device is incorporated into the device by blending the colorant, it is possible to prevent the semiconductor device from being erroneous due to infrared rays or the like generated by the surrounding device. Further, when marking the resin film by means of a laser mark or the like, there is an effect that the marks such as characters and symbols are easily recognized. In other words, in a semiconductor device or a semiconductor wafer on which a resin film is formed, a product number or the like is usually printed on the surface of the resin film by a laser marking method (a method of performing printing by cutting off the surface of the protective film by laser light). By containing the colorant (D) in the resin film, the contrast difference between the portion of the resin film that is removed by the laser light and the portion that is not removed can be sufficiently obtained, and the visibility can be improved.
著色劑,可使用有機或無機的顏料及染料。該等之中,由電磁波或紅外線遮蔽性的方面,以黑色顏料為佳。黑色顏料,可使用碳黑、氧化鐵、二氧化錳、苯胺黑、活性炭等,惟無須限定於該等。由提高半導體裝置的可靠度的觀點,以碳黑特別佳。著色劑(D),可以1種單獨使用,亦可組合2種以上使用。 As the colorant, organic or inorganic pigments and dyes can be used. Among these, black pigment is preferred in terms of electromagnetic wave or infrared shielding. As the black pigment, carbon black, iron oxide, manganese dioxide, aniline black, activated carbon, or the like can be used, but it is not limited thereto. From the viewpoint of improving the reliability of the semiconductor device, carbon black is particularly preferable. The coloring agent (D) may be used alone or in combination of two or more.
著色劑(D)的調合量,對構成樹脂膜形成層的全固形分100質量部,以0.1~35質量部為佳,以0.5~25質量部更佳,以1~15質量部特別佳。 The blending amount of the coloring agent (D) is preferably 0.1 to 35 parts by mass, more preferably 0.5 to 25 parts by mass, and particularly preferably 1 to 15 parts by mass to 100 parts by mass of the total solid content of the resin film forming layer.
(E)偶合劑 (E) coupling agent
可將具有與無機物反應的官能基及與有機官能基反應的官能基的偶合劑(E),用於提升對樹脂膜形成層之工件的接著性、密著性及/或樹脂薄膜的凝聚性。此外,藉由使用偶合劑(E),可不損及硬化樹脂膜形成層而得之樹脂薄膜的耐熱性,而提升其耐水性。如此的偶合劑,可舉鈦酸酯系偶合劑、鋁酸酯系偶合劑、矽烷偶合劑等。該等之中,以矽烷偶合劑為佳。 A coupling agent (E) having a functional group reactive with an inorganic substance and a functional group reactive with an organic functional group can be used for improving adhesion, adhesion, and/or cohesiveness of a resin film to a workpiece of a resin film forming layer. . Further, by using the coupling agent (E), the heat resistance of the resin film obtained by curing the resin film forming layer can be improved without impairing the water resistance. Examples of such a coupling agent include a titanate coupling agent, an aluminate coupling agent, and a decane coupling agent. Among these, a decane coupling agent is preferred.
矽烷偶合劑,最好使用,與其有機官能基反應之官能基,係與聚合物(A)、熱硬化性成分(B)或硬化性聚合物成分(AB)等所具有的官能基反應之基之矽烷偶合劑。 The decane coupling agent is preferably used, and the functional group reactive with the organic functional group is a group reactive with a functional group of the polymer (A), the thermosetting component (B) or the curable polymer component (AB). A decane coupling agent.
如此之矽烷偶合劑,可舉γ-縮水甘油基丙基三甲氧基矽烷、γ-縮水甘油基丙基甲基二乙氧基矽烷、β-(3,4-環氧基環己基)乙基三甲氧基矽烷、γ-(甲基丙烯醯氧丙基)三甲氧基矽烷、γ-胺基丙基三甲氧基矽烷、N-6-(胺基乙基)-γ-胺基丙基三甲氧基矽烷、N-6-(胺基乙基)-γ-胺基丙基甲基二乙氧基矽烷、N-苯基-γ-胺基丙基三甲氧基矽烷、γ-尿基丙基三乙氧基矽烷、γ-胇基丙基三甲氧基矽烷、γ-胇基丙基甲基二甲氧基矽烷、雙(3-三乙氧基矽基丙基)四硫化物、甲基三甲氧基矽烷、甲基三乙氧基矽烷、乙烯基三甲氧基矽烷、乙烯基三乙醯氧基矽烷、咪唑矽烷等。該等可以1種單獨或混合2種以上使用。 Examples of the decane coupling agent include γ-glycidylpropyltrimethoxydecane, γ-glycidylpropylmethyldiethoxydecane, and β-(3,4-epoxycyclohexyl)ethyl. Trimethoxydecane, γ-(methacryloxypropyl)trimethoxydecane, γ-aminopropyltrimethoxydecane, N-6-(aminoethyl)-γ-aminopropyltrimethyl Oxydecane, N-6-(aminoethyl)-γ-aminopropylmethyldiethoxydecane, N-phenyl-γ-aminopropyltrimethoxydecane, γ-urethane Triethoxy decane, γ-mercaptopropyltrimethoxydecane, γ-mercaptopropylmethyldimethoxydecane, bis(3-triethoxydecylpropyl)tetrasulfide, A Trimethoxy decane, methyl triethoxy decane, vinyl trimethoxy decane, vinyl triethoxy decane, imidazolium, and the like. These may be used alone or in combination of two or more.
矽烷偶合劑,對聚合物(A)、硬化性成分(B)及硬化性聚合物成分(AB)的合計100質量部,通常為0.1~20質量部,以0.2~10質量部為佳,以0.3~5質量部的比例被包含更佳。矽烷偶合劑的含量,未滿0.1質量部,則有無法得到上述效果之虞,超過20質量部,則有可能成為脫氣的原因。 The decane coupling agent has a total mass of 100 parts by mass of the polymer (A), the curable component (B), and the curable polymer component (AB), and is usually 0.1 to 20 parts by mass, preferably 0.2 to 10 parts by mass. The ratio of 0.3 to 5 mass parts is better included. When the content of the decane coupling agent is less than 0.1 part by mass, the above effect may not be obtained, and if it exceeds 20 parts by mass, the degassing may occur.
(F)泛用添加劑 (F) general purpose additives
樹脂膜形成層,於上述之外,亦可按照必要調合各種添加劑。各種添加劑,可舉平滑劑、可塑劑、帶電防止劑、氧化防止劑、離子捕捉劑、氣體捕捉劑、鏈移動劑、剝離劑等。 The resin film forming layer may be blended with various additives as necessary in addition to the above. Examples of the various additives include a smoothing agent, a plasticizer, a charge preventing agent, an oxidation preventing agent, an ion scavenger, a gas scavenger, a chain shifting agent, and a release agent.
樹脂膜形成層,可例如將上述各成分以適宜比例混合而得之組成物(樹脂膜形成用組成物)而得。樹脂膜形成用組成物,可預先以溶劑稀釋,此外,亦可於混合時加入溶劑。此外,亦可於使用樹脂膜形成用組成物時,以溶劑稀釋。 The resin film-forming layer can be obtained, for example, by a composition obtained by mixing the above components in an appropriate ratio (a composition for forming a resin film). The resin film-forming composition can be diluted with a solvent in advance, or a solvent can be added during mixing. Further, when a composition for forming a resin film is used, it may be diluted with a solvent.
相關溶劑可列舉醋酸乙酯、醋酸甲酯、乙醚、二甲醚、丙酮、甲乙酮、乙腈、己烷、環己烷、甲苯、庚烷等。 Examples of the solvent include ethyl acetate, methyl acetate, diethyl ether, dimethyl ether, acetone, methyl ethyl ketone, acetonitrile, hexane, cyclohexane, toluene, heptane and the like.
樹脂膜形成層,具有初期接著性與硬化性,於未硬化狀態可以常溫或加熱下按押至工件而容易地接著。此外,按押時亦可將樹脂膜形成層加熱。然後,經由硬化最終可賦予耐衝擊性很高的樹脂膜,接著強度亦優良,在於嚴酷的高溫度高濕度條件下,亦可保持充分的可靠度。再者,樹脂膜形成層,可以單層構造,亦可為多層構造。 The resin film forming layer has initial adhesion and hardenability, and can be easily adhered to the workpiece at normal temperature or under heating in an uncured state. Further, the resin film forming layer may be heated while being pressed. Then, a resin film having high impact resistance can be finally provided by hardening, and then the strength is excellent, and sufficient reliability can be maintained under severe high temperature and high humidity conditions. Further, the resin film forming layer may have a single layer structure or a multilayer structure.
樹脂膜形成層的厚度,以1~100μm為佳,以2~90μm更佳,以3~80μm特別佳。藉由使樹脂膜形成層的厚度在上述範圍,可使樹脂膜形成層作用作為可靠度很高的保護膜或接著劑。 The thickness of the resin film forming layer is preferably 1 to 100 μm, more preferably 2 to 90 μm, and particularly preferably 3 to 80 μm. By setting the thickness of the resin film forming layer to the above range, the resin film forming layer can function as a highly reliable protective film or adhesive.
(支持板片) (support board)
如上所述之樹脂膜形成層,係以可剝離地層積於支持板片。 The resin film forming layer as described above is laminated on the support sheet in a peelable manner.
支持板片,可使用與於上述剝離薄膜所舉之薄膜 同樣的薄膜。再者,如第3圖所示,亦可使用黏著板片作為支持板片。 Support sheet, which can be used with the film mentioned above The same film. Furthermore, as shown in Fig. 3, an adhesive sheet can also be used as the support sheet.
第3圖係第2態樣的樹脂膜形成用板片10之簡式剖面圖。於樹脂膜形成用板片上對工件施以切割等的所需加工時,如第3圖所示,可將於基材11a上形成黏著劑層11b的黏著板片用於作為支持板片11。在此態樣,樹脂膜形成層12,係層積於設在支持板片11之黏著劑層11b上。黏著板片的基材11a,可舉例示作為剝離板片之上述薄膜。黏著劑層11b,可使用具有可剝離樹脂膜形成層的程度的黏著力的弱黏著性者,亦可使用藉由能量線照射使黏著力降低之能量線硬化性者。 Fig. 3 is a schematic cross-sectional view showing a sheet 10 for forming a resin film in a second aspect. When a desired process such as dicing is applied to the workpiece on the sheet for forming a resin film, as shown in Fig. 3, an adhesive sheet on which the adhesive layer 11b can be formed on the substrate 11a is used as the support sheet 11. In this case, the resin film forming layer 12 is laminated on the adhesive layer 11b provided on the support sheet 11. The substrate 11a to which the sheet is adhered can be exemplified as the above-mentioned film as a release sheet. As the adhesive layer 11b, a weak adhesive having an adhesive strength to the extent that the resin film forming layer can be peeled off can be used, and an energy ray hardening property in which the adhesive force is lowered by energy ray irradiation can be used.
黏著劑層11b,可藉由先前習知之各種黏著劑(例如,橡膠系、丙烯酸系、矽酮系、尿烷系、乙烯基醚系等的泛用黏著劑、於表面具有凹凸的黏著劑、能量線硬化型黏著劑、含有熱膨脹成分之黏著劑等)形成。 The adhesive layer 11b can be obtained by various conventional adhesives (for example, a general-purpose adhesive such as a rubber-based, acrylic-based, anthrone-based, urethane-based, or vinyl ether-based adhesive, or an adhesive having irregularities on the surface, It is formed by an energy ray-curable adhesive, an adhesive containing a thermal expansion component, or the like.
樹脂膜形成用板片的構成係此類構成,則樹脂膜形成用板片,可作用作為在切割步驟用於支持工件的切割板片時,可得保持支持板片與樹脂膜形成層間的密著性,在於切割步驟,抑制附有樹脂膜形成層之晶片由支持板片剝落的效果。樹脂膜形成用板片,作用作為在切割步驟用於支持工件的切割板片時,在於切割步驟無須對附有樹脂膜形成層之工件另外黏貼切割板片,可簡化半導體裝置的製造步驟。 In the configuration of the sheet for forming a resin film, the sheet for forming a resin film can function as a dicing sheet for supporting the workpiece in the cutting step, and the density between the supporting sheet and the resin film forming layer can be maintained. The property is in the cutting step, and the effect of peeling off the wafer with the resin film forming layer by the supporting sheet is suppressed. The sheet for forming a resin film functions as a dicing sheet for supporting a workpiece in the dicing step, and the step of manufacturing the semiconductor device can be simplified without separately attaching the dicing sheet to the workpiece having the resin film forming layer in the dicing step.
樹脂膜形成用板片,係於去除剝離薄膜之後,將樹脂膜形成層黏貼於於各種工件,根據情形,之後,對工件施 以切割等的所需加工。然後,使樹脂膜形成層固著殘存於工件,將支持板片剝離。即,使用於包含將樹脂膜形成層,由支持板片轉印於工件的步驟的製程。 The sheet for forming a resin film is obtained by adhering a resin film forming layer to various workpieces after removing the peeling film, and then, depending on the situation, The required processing such as cutting. Then, the resin film forming layer is fixed to the workpiece, and the supporting sheet is peeled off. That is, it is used in a process including a step of transferring a resin film forming layer from a supporting sheet to a workpiece.
在於本發明,可適用的工件,其素材並無限定,可舉例如,半導體晶圓、玻璃基板、陶瓷基板、FPC等的有機材料基板、或精密零件等的金屬材料等的各種物品。 In the present invention, the material to be applied is not limited, and examples thereof include various materials such as a semiconductor wafer, a glass substrate, a ceramic substrate, an organic material substrate such as FPC, and a metal material such as a precision component.
如上所述之樹脂膜形成層,可用於作為將工件個片化之晶片固定於基板或其他的晶片的薄膜狀接著劑。如此的薄膜狀接著劑,近年多用於晶片的晶粒接合步驟。薄膜狀接著劑,較佳的是將含有環氧系熱硬化性成分的樹脂膜形成用組成物製膜者,可剝離地形成於支持板片上,可得本發明之樹脂膜形成用板片。 The resin film forming layer as described above can be used as a film-like adhesive for fixing a wafer in which a workpiece is formed to a substrate or another wafer. Such a film-like adhesive has been used in the die bonding step of wafers in recent years. The film-form adhesive is preferably formed by forming a film for forming a resin film containing an epoxy-based thermosetting component, and is formed on the support sheet by peeling, and the sheet for forming a resin film of the present invention can be obtained.
此外,本發明之樹脂膜形成用板片,亦可為同時兼具切割晶粒時的工件固定功能及晶粒接合時的晶粒接著功能的切割.晶粒接合兼用板片。此時,藉由將薄膜狀接著劑,作成具有黏著性的性狀,或藉由加熱軟化而可黏貼於工件的性狀,可於切割步驟保持工件或將該工件個片化之晶片。然後,於晶粒接合時,作用作為用於固著晶片的接著劑。以下,將如此地成為樹脂膜形成用板片的構成要素的薄膜狀接著劑亦稱為接著劑層。接著劑層,於切割時,與工件一起被切斷,形成與切斷的晶片同形狀的接著劑層。切割結束之後,進行晶片的拾取,則接著劑層,與晶片一起由支持板片剝離。將伴隨接著劑層之晶片載置於基板等的搭載部或其他的晶片等,進行加熱,將晶片與晶片搭載部經由接著劑層接著。如此得切割.晶 粒接合兼用板片,係於支持板片上形成兼具工件固定功能與晶粒接著功能的接著劑層。 In addition, the sheet for forming a resin film of the present invention may also have a workpiece fixing function when cutting a crystal grain and a cutting function of a grain subsequent function at the time of die bonding. The die bond is used as a sheet. At this time, by forming the film-like adhesive into an adhesive property or a property of being adhered to the workpiece by softening by heating, the workpiece can be held in the cutting step or the wafer can be sliced. Then, at the time of die bonding, it acts as an adhesive for fixing the wafer. In the following, the film-form adhesive which is a component of the resin film formation sheet is also called an adhesive layer. The subsequent layer is cut together with the workpiece at the time of cutting to form an adhesive layer having the same shape as the cut wafer. After the dicing is completed, the wafer is picked up, and the adhesive layer is peeled off from the support sheet together with the wafer. The wafer with the adhesive layer is placed on a mounting portion such as a substrate or another wafer, and heated, and the wafer and the wafer mounting portion are then bonded via an adhesive layer. So cut. crystal The pellet bonding sheet is formed on the supporting sheet to form an adhesive layer having both a workpiece fixing function and a die attach function.
此外,本發明的樹脂膜形成用板片的樹脂膜形成層,亦可作用作為工件或將工件個片化之晶片的保護膜。此時,例如,將工件黏貼於樹脂膜形成層,使樹脂膜形成層硬化成樹脂膜,之後,將工件與樹脂膜切割,得到具有作用作為保護膜之樹脂膜之晶片。用於形成如此之保護膜之板片,係於支持板片上具有成為保護膜之接著性樹脂膜形成層。成為保護膜之樹脂膜形成層,例如,包含膠合劑成分(上述第1膠合劑成分及/或第2膠合劑成分),此外,亦可按照必要包含無機填充劑(C)、著色劑(D)等。 Further, the resin film forming layer of the resin film-forming sheet of the present invention may also function as a protective film for a workpiece or a wafer in which a workpiece is formed. At this time, for example, the workpiece is adhered to the resin film forming layer, and the resin film forming layer is cured into a resin film. Thereafter, the workpiece and the resin film are cut to obtain a wafer having a resin film functioning as a protective film. The sheet for forming such a protective film has an adhesive resin film forming layer which serves as a protective film on the supporting sheet. The resin film forming layer which is a protective film contains, for example, a binder component (the first binder component and/or the second binder component), and may contain an inorganic filler (C) or a colorant (D) as necessary. )Wait.
此外,如第2圖及第3圖所示,在於上述樹脂膜形成用板片10,於剝離薄膜13,由樹脂膜形成層側的面沿著樹脂膜形成層12的外周形成切入部D1,切入部D1的切入深度d1以剝離薄膜的厚度的1/2以上為佳。 In addition, as shown in FIG. 2 and FIG. 3, the resin film forming sheet 10 is formed on the surface of the resin film forming layer on the peeling film 13 along the outer periphery of the resin film forming layer 12, and the cut portion D1 is formed. The cutting depth d1 of the cut portion D1 is preferably 1/2 or more of the thickness of the peeling film.
將樹脂膜形成用板片捲成捲筒狀時,為防止樹脂膜形成層發生捲痕,使剝離薄膜的厚度為50μm以上,則剝離薄膜的韌性變強而有難以彎曲的傾向。此外,一般樹脂膜形成層的韌性有較剝離薄膜弱的傾向。因此,將如此之樹脂膜形成用板片黏貼於工件的步驟,將第6圖所示的剝離板64抵接於樹脂膜形成用板片的剝離薄膜13,非將剝離薄膜13向剝離板64側以銳角彎曲,則難以在樹脂膜形成層與剝離薄膜的界面作出剝離起點,而有無法送出樹脂膜形成層之情形。但是,50μm以上的剝離薄膜,則其因於其厚度,難以向剝離板64側以銳 角彎曲,如第7圖所示難以送出樹脂膜形成層。 When the resin film forming sheet is wound into a roll shape, the resin film forming layer is prevented from being wound, and when the thickness of the peeling film is 50 μm or more, the toughness of the peeling film tends to be strong, and it tends to be difficult to bend. Further, the toughness of the general resin film forming layer tends to be weaker than that of the peeling film. Therefore, in the step of adhering the resin film forming sheet to the workpiece, the peeling sheet 64 shown in Fig. 6 is brought into contact with the peeling film 13 of the resin film forming sheet, and the peeling film 13 is not applied to the peeling sheet 64. When the side is bent at an acute angle, it is difficult to form a peeling starting point at the interface between the resin film forming layer and the release film, and it is difficult to feed the resin film forming layer. However, in the peeling film of 50 μm or more, it is difficult to sharpen the side of the peeling plate 64 due to the thickness thereof. The corner is bent, and it is difficult to feed the resin film forming layer as shown in Fig. 7.
在於本發明,於剝離薄膜13形成切入部D1,藉由使切入部D1的切入深度d1為剝離薄膜的1/2以上,可消除上述問題。即,如第6(b)圖所示,即使是50μm以上的剝離薄膜,可以切入部D1作為起點將剝離薄膜以銳角彎曲,容易在樹脂膜形成層與剝離薄膜的界面作出剝離起點。 In the present invention, the cut portion D1 is formed in the release film 13, and the above problem can be eliminated by making the cut depth d1 of the cut portion D1 1/2 or more of the peeling film. In other words, as shown in Fig. 6(b), even in the peeling film of 50 μm or more, the peeling film can be bent at an acute angle by using the cut portion D1 as a starting point, and the peeling starting point can be easily formed at the interface between the resin film forming layer and the peeling film.
此外,於剝離薄膜13形成既定深度的切入部D1時,可將樹脂膜形成層與支持板片一起確實地切斷成既定形狀。此外,藉由在剝離薄膜13形成既定深度的切入部D1,即使剝離薄膜的厚度為50μm以上,亦變得容易將樹脂膜形成用板片捲成捲筒狀,保管時的收納性優良。 Further, when the peeling film 13 is formed into the cut portion D1 having a predetermined depth, the resin film forming layer can be surely cut into a predetermined shape together with the supporting sheet. In addition, when the thickness of the peeling film is 50 μm or more, the sheet for forming a resin film is easily wound into a roll shape, and the storage property at the time of storage is excellent.
再者,如第6圖所示,在於將樹脂膜形成用板片黏貼於工件的步驟,於剝離薄膜會受到長邊方向(流動方向)的應力。沒有在剝離薄膜形成切入部D1,則該應力在樹脂膜形成層傳播,有樹脂膜形成層向流動方向延伸之情形。樹脂膜形成層的變形(延伸),會降低其厚度精度。結果會成為降低使用該樹脂膜形成層所得之半導體裝置之可靠度的原因。藉由在剝離薄膜形成既定深度的切入部,可緩和樹脂膜形成層所受的應力,可抑制樹脂膜形成層的變形。 Further, as shown in Fig. 6, the step of adhering the resin film forming sheet to the workpiece causes the peeling film to be subjected to stress in the longitudinal direction (flow direction). When the cut portion D1 is not formed in the release film, the stress propagates in the resin film formation layer, and the resin film formation layer extends in the flow direction. The deformation (extension) of the resin film forming layer reduces the thickness precision. As a result, the reliability of the semiconductor device obtained by using the resin film forming layer can be lowered. By forming the cut-in portion having a predetermined depth in the release film, the stress applied to the resin film-forming layer can be alleviated, and deformation of the resin film-forming layer can be suppressed.
再者,本發明之樹脂膜形成用板片,亦可作成如下第3或第4態樣。以下,使用圖面說明關於樹脂膜形成用板片的各個態樣。 Further, the sheet for forming a resin film of the present invention may be in the following third or fourth aspect. Hereinafter, various aspects of the sheet for forming a resin film will be described using the drawings.
第3態樣及第4態樣,係如第4圖及第5圖所示,支持板片11的直徑較樹脂膜形成層12的直徑大,於剝離薄膜 13,於切入部D1之外,由支持板片側的面沿著支持板片11的外周形成切入部D2,切入部D1的切入深度d1,係切入部D2的切入深度d2以上。 In the third aspect and the fourth aspect, as shown in FIGS. 4 and 5, the diameter of the supporting sheet 11 is larger than the diameter of the resin film forming layer 12, and the peeling film is formed. 13. The cut-in portion D2 is formed along the outer surface of the support sheet 11 in addition to the cut-in portion D1, and the cut-in depth d1 of the cut-in portion D1 is equal to or greater than the cut-in depth d2 of the cut-in portion D2.
在於第3態樣及第4態樣,切入深度d1與d2可相同,切入深度d2較切入深度d1大亦無妨,惟由於支持板片的韌性較樹脂膜形成層強,故由容易在於支持板片與剝離薄膜的界面作出剝離起點的觀點;由抑制完全切斷支持板片,部分切斷剝離薄膜的沖模刀的磨耗的觀點;沖模後的不要的部分的去除步驟(去削步驟)較容易的觀點;及由抑制因切入深度d2過大,則因沖模刀的壓力,將支持板片切入既定量時,由於支持板片與樹脂膜形成層的層積部分較切入支持板片的部分厚,使樹脂膜形成層受到壓力,而樹脂膜形成層變形之虞的觀點,切入部D2的切入深度d2,較切入部D1的切入深度d1小為佳,進一步以剝離薄膜的厚度的3/5以下為佳,以1/2以下更佳,以1/4以下特別佳。 In the third aspect and the fourth aspect, the depths d1 and d2 may be the same, and the depth d2 is larger than the depth d1. However, since the toughness of the supporting sheet is stronger than that of the resin film, it is easy to support the board. The viewpoint of the peeling starting point of the interface between the sheet and the release film is made; the viewpoint of the abrasion of the die which cuts the peeling film partially by cutting the support sheet is suppressed; the removal step (cutting step) of the unnecessary portion after the die is easier When the depth of the cut-in depth d2 is too large, the support sheet is cut into a predetermined amount due to the pressure of the die, and since the laminated portion of the support sheet and the resin film-forming layer is thicker than the portion cut into the support sheet, From the viewpoint of the pressure of the resin film forming layer and the deformation of the resin film forming layer, the cutting depth d2 of the cut portion D2 is preferably smaller than the cutting depth d1 of the cut portion D1, and further 3/5 or less of the thickness of the peeling film. Preferably, it is preferably 1/2 or less, and particularly preferably 1/4 or less.
再者,亦可於支持板片11與樹脂膜形成層12之層積體的外周部,剝離薄膜13與樹脂膜形成層12之間,或剝離薄膜13與支持板片11之間,設夾具接著層。夾具接著層,可採用由黏著劑層單體所組成之黏著構件、由基材與黏著劑層構成的黏著構件,或具有芯材的雙面黏著構件。 Further, a peripheral portion between the support sheet 11 and the resin film forming layer 12 may be interposed between the release film 13 and the resin film forming layer 12, or between the release film 13 and the support sheet 11, and a jig may be provided. Then the layer. The jig adhesive layer may be an adhesive member composed of a single adhesive layer, an adhesive member composed of a substrate and an adhesive layer, or a double-sided adhesive member having a core material.
夾具接著層,例如,係環狀(環形狀),具有空洞部(內部開口),具有可固定於環形框等的夾具的大小。具體而言,環形框的內徑,較夾具接著層的外徑小。再者,環形框的內徑較夾具接著層的內徑稍大。再者,環形框通常係金屬或塑膠的 成形體。 The jig attachment layer, for example, has a ring shape (ring shape), has a cavity portion (internal opening), and has a size that can be fixed to a jig of a ring frame or the like. Specifically, the inner diameter of the ring frame is smaller than the outer diameter of the adhesive layer. Furthermore, the inner diameter of the ring frame is slightly larger than the inner diameter of the adhesive layer. Furthermore, the ring frame is usually metal or plastic. Shaped body.
以黏著劑層單體所組成的黏著構件作為夾具接著層時,形成黏著劑層的黏著劑,並無特別限制,例如,由丙烯酸黏著劑、橡膠系黏著劑或者矽酮黏著劑組成為佳。該等之中,考慮由環形框的再剝離性,則以丙烯酸黏著劑為佳。再者,上述黏著劑,可以單獨使用,亦可混合二種以上使用。 When the adhesive member composed of the adhesive layer monomer is used as the adhesive layer of the jig, the adhesive for forming the adhesive layer is not particularly limited, and for example, it is preferably composed of an acrylic adhesive, a rubber adhesive or an anthrone adhesive. Among these, in view of the removability of the ring frame, an acrylic adhesive is preferred. Further, the above-mentioned adhesive may be used singly or in combination of two or more.
構成夾具接著層的黏著劑層的厚度,以2~20μm為佳,以3~15μm更佳,以4~10μm特別佳。黏著劑層的厚度未滿2μm時,有無法顯現充分的接著性之情形。黏著劑層的厚度超過20μm時,由環形框剝離時,有黏著劑的殘留物殘留於環形框,而污染環形框之情形。 The thickness of the adhesive layer constituting the adhesive layer of the jig is preferably 2 to 20 μm, more preferably 3 to 15 μm, and particularly preferably 4 to 10 μm. When the thickness of the adhesive layer is less than 2 μm, sufficient adhesion cannot be exhibited. When the thickness of the adhesive layer exceeds 20 μm, when the ring frame is peeled off, the residue of the adhesive remains in the ring frame, which contaminates the ring frame.
由基材與黏著劑層構成的黏著構件作為夾具接著層時,將環形框黏於構成黏著構件的黏著劑層。 When the adhesive member composed of the substrate and the adhesive layer serves as a bonding layer of the jig, the annular frame is adhered to the adhesive layer constituting the adhesive member.
形成黏著劑層的黏著劑,與上述黏著劑層單體所組成之黏著構件中的形成黏著劑層的黏著劑相同。再者,黏著劑層的厚度亦相同。 The adhesive forming the adhesive layer is the same as the adhesive forming the adhesive layer in the adhesive member composed of the above-mentioned adhesive layer monomers. Furthermore, the thickness of the adhesive layer is also the same.
構成夾具接著層的基材,並無特別限制,例如聚乙烯薄膜、聚丙烯薄膜、乙烯.醋酸乙烯酯共聚物薄膜、乙烯.(甲基)丙烯酸共聚物薄膜、乙烯.(甲基)丙烯酸酯共聚物薄膜、離聚物樹脂薄膜等的聚烯烴薄膜、聚氯乙烯薄膜、聚對苯二甲酸乙二醇酯薄膜等。該等之中,考慮擴展性,則以聚乙烯薄膜及聚氯乙烯薄膜為佳,以聚氯乙烯薄膜更佳。 The substrate constituting the adhesive layer of the jig is not particularly limited, and is, for example, a polyethylene film, a polypropylene film, or ethylene. Vinyl acetate copolymer film, ethylene. (Meth)acrylic copolymer film, ethylene. A (meth) acrylate copolymer film, a polyolefin film such as an ionomer resin film, a polyvinyl chloride film, a polyethylene terephthalate film, or the like. Among these, in view of expandability, a polyethylene film and a polyvinyl chloride film are preferred, and a polyvinyl chloride film is more preferable.
構成夾具接著層的基材的厚度,以15~200μm為佳,以30~150μm更佳,進一步以40~100μm為佳。 The thickness of the substrate constituting the adhesive layer of the jig is preferably 15 to 200 μm, more preferably 30 to 150 μm, still more preferably 40 to 100 μm.
此外,以具有芯材的雙面黏著構件作為夾具接著層時,雙面黏著構件,係由芯材、形成於其一方的面之層積用黏著劑層、及形成於另一方的面之固定用黏著劑層所組成。層積用黏著劑層,係在將樹脂膜形成用板片的樹脂膜形成層黏貼於晶圓的步驟,於第1態樣及第2態樣的樹脂膜形成用板片之情形係對樹脂膜形成層,於第3態樣及第4態樣的樹脂膜形成用板片之情形,係對支持板片黏貼之側之黏著劑層。此外,固定用黏著劑層,係在於上述黏貼步驟黏貼於環形框之側之黏著劑層。 Further, when the double-sided adhesive member having the core material is used as the jig adhesive layer, the double-sided adhesive member is fixed by the core material, the layer of the adhesive layer formed on one surface thereof, and the surface formed on the other surface. Made up of an adhesive layer. The adhesive layer for lamination is a step of adhering a resin film forming layer of a sheet for forming a resin film to a wafer, and the resin sheet forming sheet of the first aspect and the second aspect is a resin. In the case of the film formation layer of the third aspect and the fourth aspect, the film formation layer is an adhesive layer on the side where the support sheet is adhered. Further, the fixing adhesive layer is an adhesive layer adhered to the side of the ring frame in the above-described pasting step.
兩面黏著構件的芯材,可舉與上述黏著構件的基材相同者。於該等之中,考慮擴展性,則以聚烯烴薄膜及可塑化之聚氯乙烯薄膜為佳。 The core material of the double-sided adhesive member may be the same as the base material of the above-mentioned adhesive member. Among these, in view of expandability, a polyolefin film and a plasticizable polyvinyl chloride film are preferred.
芯材的厚度通常為15~200μm,以30~150μm為佳,以40~100μm更佳。 The thickness of the core material is usually 15 to 200 μm, preferably 30 to 150 μm, and more preferably 40 to 100 μm.
兩面黏著構件的層積用黏著劑層及固定用黏著劑層,可係相同的黏著劑所組成之層,亦可係不同的黏著劑所組成之層。適宜選擇使固定用黏著劑層與環形框的接著力,較樹脂膜形成層或支持板片與層積用黏著劑層的接著力小。如此的黏著劑,可舉例如丙烯酸黏著劑、橡膠系黏著劑、矽酮黏著劑。該等之中,考慮由環形框的再剝離性,以丙烯酸黏著劑為佳。形成固定用黏著劑層的黏著劑,可以單獨使用,亦可混合二種以上使用。關於層積用黏著劑層亦相同。 The adhesive layer for the adhesion of the two-sided adhesive member and the adhesive layer for fixing may be a layer composed of the same adhesive or a layer composed of different adhesives. It is preferable to select the adhesion force of the fixing adhesive layer and the ring frame to be smaller than the adhesion force of the resin film forming layer or the supporting sheet and the laminating adhesive layer. Examples of such an adhesive include an acrylic adhesive, a rubber adhesive, and an anthrone adhesive. Among these, in view of the removability of the ring frame, an acrylic adhesive is preferred. The adhesive for forming the fixing adhesive layer may be used singly or in combination of two or more. The same applies to the adhesive layer for lamination.
層積用黏著劑層及固定用黏著劑層的厚度,與上述黏著構件的黏著劑層的厚度相同。 The thickness of the layering adhesive layer and the fixing adhesive layer is the same as the thickness of the adhesive layer of the above-mentioned adhesive member.
藉由設置夾具接著層,使支持板片11及樹脂膜形成層12所組成之層積體容易與環形框等的夾具接著。 By providing the jig adhesive layer, the laminated body composed of the support sheet 11 and the resin film forming layer 12 is easily attached to a jig such as a ring frame.
樹脂膜形成用板片的形狀,係作成支持板片及樹脂膜形成層所組成的層積體層積在長條的剝離薄膜上的帶狀的形狀,可將此捲收。特別是,將配合所期望的形狀裁剪的支持板片及樹脂膜形成層所組成的層積體,可剝離地隔著既定間隔層積於長條的剝離薄膜上之形態為佳。再者,亦可將樹脂膜形成用板片的形狀,作成枚葉的形狀。 The shape of the sheet for forming a resin film is a strip shape in which a laminate composed of a support sheet and a resin film forming layer is laminated on a long release film, and this can be wound up. In particular, it is preferable that a laminate comprising a support sheet and a resin film forming layer which are cut in a desired shape is detachably laminated on a long release film at a predetermined interval. Further, the shape of the sheet for forming a resin film may be formed into a shape of a leaf.
將配合所期望的形狀裁剪的支持板片及樹脂膜形成層所組成的層積體,可剝離地隔著既定間隔層積於長條的剝離薄膜上的形態之情形,會在層積支持板片及樹脂膜形成層的部分,與沒有層積支持板片及樹脂膜形成層的部分,使樹脂膜形成用板片的厚度不均勻。將如此的厚度不均勻的樹脂膜形成用板片捲成捲筒狀,則厚度不均勻而捲壓變得不均勻,而有引起捲筒的崩捲之情形。因此,在於如此之形態的樹脂膜形成用板片,使厚度均勻為佳。因此,於配合所期望的形狀裁剪的支持板片及樹脂膜形成層外側,如第1圖所示,隔著些許空間,沿著在長條的剝離薄膜13的短邊方向的兩邊部15,黏貼與支持板片及樹脂膜形成層所組成之層積體相同程度的厚度的周邊帶14為佳。在此,與支持板片及樹脂膜形成層所組成的層積體與周邊帶14的間隔,以1~20mm程度為佳,以2~10mm程度特別佳。藉由周邊帶14,消除厚度不均勻,容易迴避上述的異常。 A laminated body composed of a supporting sheet and a resin film forming layer which are cut in a desired shape and which can be peeled off and laminated on a long peeling film at a predetermined interval, may be laminated on a support sheet. The portion of the sheet and the resin film forming layer and the portion where the supporting sheet and the resin film forming layer are not laminated have a thickness unevenness of the sheet for forming a resin film. When such a sheet for forming a resin film having uneven thickness is wound into a roll shape, the thickness is not uniform and the crimping becomes uneven, which may cause collapse of the roll. Therefore, in the sheet for forming a resin film of such a form, it is preferable to make the thickness uniform. Therefore, as shown in Fig. 1, the support sheet and the resin film forming layer which are cut in a desired shape are placed along the both sides 15 in the short side direction of the long peeling film 13 with a small space therebetween. It is preferable to adhere the peripheral tape 14 having the same thickness as the laminate of the support sheet and the resin film forming layer. Here, the interval between the laminate of the support sheet and the resin film forming layer and the peripheral tape 14 is preferably from 1 to 20 mm, particularly preferably from 2 to 10 mm. By the peripheral belt 14, the thickness unevenness is eliminated, and the above abnormality is easily avoided.
(樹脂膜形成用板片之製造) (Manufacture of sheet for forming a resin film)
接著,將配合所期望的形狀裁剪的支持板片及樹脂膜形成層所組成的層積體,關於可剝離地隔著既定間隔層積於長條的剝離薄膜上的形態的樹脂膜形成用板片的製造方法,如第4圖所示,以第3態樣為例說明,惟本發明的樹脂膜形成用板片,並不限於藉由如此的製造方法所得者。 Then, a laminate formed of a support sheet and a resin film-forming layer which are cut in a desired shape, and a resin film-forming sheet which is detachably laminated on a long release film with a predetermined space therebetween The manufacturing method of the sheet is as shown in Fig. 4, and the third aspect is taken as an example. However, the sheet for forming a resin film of the present invention is not limited to those obtained by such a production method.
首先,將剝離薄膜上的樹脂膜形成層半切成希望的形狀。 First, the resin film forming layer on the release film is half-cut into a desired shape.
具體,係於2片長條剝離薄膜(以下,稱為第1長條剝離薄膜、第2長條剝離薄膜。第2長條剝離薄膜係在於第4圖之剝離薄膜13。)之間準備具有樹脂膜形成層之層積體。可將預先製膜成薄膜狀的樹脂膜形成層,以2片長條剝離薄膜包夾,此外,亦可將用於形成樹脂膜形成層的樹脂膜形成用組成物,於一方的長條剝離薄膜,塗佈、乾燥,於塗膜上黏貼另一方的長條剝離薄膜形成層積體。 Specifically, it is prepared to have a resin between two long release films (hereinafter referred to as a first long release film and a second long release film. The second long release film is a release film 13 of Fig. 4). A laminate of film forming layers. A resin film forming layer formed into a film in advance may be formed by sandwiching two long strips of the film, and a resin film forming composition for forming a resin film forming layer may be used as one of the long stripping films. Coating, drying, and laminating the other long stripping film on the coating film to form a laminate.
接著,將第1長條剝離薄膜與樹脂膜形成層以所期望的形狀完全切入到達第2長條剝離薄膜13,將第1長條剝離薄膜與樹脂膜形成層沖模(半切)。沖模,係藉由模切等的泛用裝置、方法進行。此時,切入深度,係完全切入第1長條剝離薄膜與樹脂膜形成層,形成切入深度d1的切入部D1,故係以第1長尺剝離薄膜的厚度與樹脂膜形成層的厚度及切入深度d1的合計的深度切入。因此,於第2長條剝離薄膜的表面,形成切入深度d1的切入部D1。對第2長條剝離薄膜的切入深度d1,以第2長條剝離薄膜的厚度的1/2以上為佳,以3/5以上的更佳。具體,係第2長條剝離薄膜的厚度為50μm時,切入 深度d1,以25μm以上為佳,以30μm以上更佳。第2長條剝離薄膜的厚度為100μm,切入深度d1,以50μm以上為佳,60μm以上更佳。切入深度d1的上限,以不會有切入刀完全穿透第2剝離薄膜的部分,以第2剝離薄膜的厚度4/5以下為佳。 Then, the first long release film and the resin film formation layer are completely cut into a desired shape to reach the second long release film 13 , and the first long release film and the resin film are formed into a layer die (half cut). The die is carried out by a general-purpose device or method such as die cutting. In this case, the thickness of the first long stripping film and the thickness of the resin film forming layer and the cut-in are formed by completely cutting the first long stripping film and the resin film forming layer to form the cut portion D1 having the depth of cut d1. The depth of the total depth of the depth d1 is cut. Therefore, the cut portion D1 having the cut depth d1 is formed on the surface of the second long strip peeling film. The cutting depth d1 of the second long release film is preferably 1/2 or more of the thickness of the second long release film, and more preferably 3/5 or more. Specifically, when the thickness of the second long strip film is 50 μm, the cut is The depth d1 is preferably 25 μm or more, more preferably 30 μm or more. The thickness of the second long strip release film is 100 μm, and the depth of cut is d1, preferably 50 μm or more, more preferably 60 μm or more. The upper limit of the depth d1 is cut so that the portion where the cutting blade completely penetrates the second release film is not required, and the thickness of the second release film is preferably 4/5 or less.
接著,於第1剝離薄膜的長邊方向黏貼剝離用黏著帶,使沖模之第1剝離薄膜結合。然後,藉由去除剝離用黏著帶,使所期望形狀的樹脂膜形成層12殘存於第2長條剝離薄膜13上,將殘餘的樹脂膜形成層與第1長條剝離薄膜一起去除。所期望的形狀的樹脂膜形成層以外的殘餘部分係連續。因此,以第2長條剝離薄膜與樹脂膜形成層的界面作為剝離起點,則殘餘部的樹脂膜形成層,將與第1長條剝離薄膜一起去除,所期望形狀的樹脂膜形成層12,殘存於第2長條剝離薄膜13上。結果,可得於第2長條剝離薄膜13上,排列所期望形狀的樹脂膜形成層12之層積體。 Then, the adhesive tape for peeling is adhered to the longitudinal direction of the first release film, and the first release film of the die is bonded. Then, the peeling adhesive tape is removed, and the resin film forming layer 12 having a desired shape remains on the second long stripping film 13, and the remaining resin film forming layer is removed together with the first long stripping film. The residual portion other than the resin film forming layer of the desired shape is continuous. Therefore, when the interface between the second long stripping film and the resin film forming layer is used as the peeling starting point, the resin film forming layer in the remaining portion is removed together with the first long peeling film, and the resin film forming layer 12 having a desired shape is formed. It remains on the second strip peeling film 13. As a result, a laminate of the resin film forming layers 12 having a desired shape can be arranged on the second strip peeling film 13.
接著,黏貼支持板片11使第2長條剝離薄膜13及樹脂膜形成層12,接於具有第2長條剝離薄膜13之樹脂膜形成層12之面。 Then, the second long release film 13 and the resin film formation layer 12 are adhered to the surface of the resin film formation layer 12 having the second long release film 13 .
然後,將支持板片,略圓形沖模成環形框的內徑以上,外徑以下的大小。此時,使樹脂膜形成層12的中心點,與沖模後的略圓形的支持板片11的中心點一致地沖模。此外,切入深度,由於係完全切入支持板片,形成切入深度d2的切入部D2,故以支持板片的厚度與切入深度d2的合計深度切入。因此,於第2長條剝離薄膜的表面,形成切入深度d2的切入部D2。 Then, the support sheet is slightly circularly punched into the inner diameter of the annular frame and below the outer diameter. At this time, the center point of the resin film forming layer 12 is punched in conformity with the center point of the slightly circular support sheet piece 11 after the die. Further, since the depth of the cut is completely cut into the support sheet and the cut portion D2 is cut into the depth d2, the thickness of the support sheet is cut to the total depth of the cut depth d2. Therefore, the cut portion D2 having the cut depth d2 is formed on the surface of the second long strip peeling film.
對第2長條剝離薄膜的切入深度d2,可與切入部D1的切入深度d1相同,亦可較切入深度d1大,對第2長條剝離薄膜的切入深度d2比切入部D1的切入深度d1也小為佳。對第2長條剝離薄膜的切入深度d2,較切入部D1的切入深度d1小,且以第2長條剝離薄膜的厚度的3/5以下為佳,以第2長條剝離薄膜的厚度的1/2以下更佳,進一步以1/4以下為佳。具體,係第2長條剝離薄膜的厚度為50μm,則切入深度d2,以30μm以下為佳,以25μm以下更佳,進一步以12μm以下為佳。第2長條剝離薄膜的厚度為100μm,則切入深度d2,以60μm以下為佳,以50μm以下更佳,進一步以25μm以下更佳。 The plunging depth d2 of the second strip peeling film may be the same as the plunging depth d1 of the cut portion D1, or may be larger than the plunging depth d1, and the plunging depth d2 of the second strip peeling film may be smaller than the plunging depth d1 of the cut portion D1. It is also small. The cutting depth d2 of the second elongate release film is smaller than the incision depth d1 of the incision portion D1, and is preferably 3/5 or less of the thickness of the second elongate release film, and the thickness of the second elongate film is peeled off. It is better to be 1/2 or less, and further preferably 1/4 or less. Specifically, when the thickness of the second long release film is 50 μm, the depth of cut is d2, preferably 30 μm or less, more preferably 25 μm or less, and still more preferably 12 μm or less. When the thickness of the second elongate release film is 100 μm, the depth of cut is d2, preferably 60 μm or less, more preferably 50 μm or less, and still more preferably 25 μm or less.
接著,使略圓形的支持板片11,殘存於第2長條剝離薄膜13上,去除殘餘的支持板片。結果,可得於第2長條剝離薄膜13上具有所期望的形狀的樹脂膜形成層,且具有略圓形的支持板片11,第3態樣的樹脂膜形成用板片。 Next, the substantially circular support sheet 11 is left on the second elongated release film 13 to remove the remaining support sheets. As a result, a resin film forming layer having a desired shape on the second long strip peeling film 13 and a support sheet 11 having a substantially circular shape and a sheet for forming a resin film of the third aspect can be obtained.
再者,在於上述,於進行支持板片的沖模時,將支持板片以略圓形切入的同時,對該略圓形的支持板片11的外側,由支持板片空出些微的間隔,於第2長條剝離薄膜的短邊方向沿著兩邊部15,使支持板片殘存作為周邊帶14地沖模為佳。之後,藉由使略圓形的支持板片11及周邊帶14,殘存於第2長條剝離薄膜13上,去除殘餘的支持板片,得到略圓形的支持板片11及所期望形狀的樹脂膜形成層12所組成的層積體,與周邊帶14,連續黏貼於長條的剝離薄膜5上之形態之樹脂膜形成用板片10。 Furthermore, in the above, when the die for supporting the sheet is formed, the support sheet is cut into a circular shape, and the outer side of the slightly circular support sheet 11 is slightly spaced by the support sheet. It is preferable that the support sheet is left as the peripheral tape 14 in the short side direction of the second long strip film along the both side portions 15. Thereafter, the support plate 11 and the peripheral tape 14 which are slightly rounded are left on the second elongated release film 13, and the remaining support sheets are removed to obtain a slightly circular support plate 11 and a desired shape. The laminated body of the resin film forming layer 12 and the peripheral tape 14 are continuously adhered to the resin film forming sheet 10 in the form of the long release film 5.
(半導體裝置的製造方法) (Method of Manufacturing Semiconductor Device)
其次,關於本發明之樹脂膜形成用板片的利用方法,以第1圖所示之第1態樣之樹脂膜形成用板片適用於半導體裝置之製造方法為例說明。 Next, the method of using the sheet for forming a resin film of the present invention will be described by way of an example in which the sheet for forming a resin film according to the first aspect shown in Fig. 1 is applied to a semiconductor device.
使用關於第1本發明之樹脂膜形成用板片之半導體裝置之製造方法,以包含將該板片的樹脂膜形成層黏貼於工件,將該工件切割成晶片,使該該樹脂膜形成層固著殘存於該晶片的任意一面,由支持板片剝離,將該晶片,經由該樹脂膜形成層載置於晶粒墊部上或其他的晶片上的步驟為佳。 In the method of manufacturing a semiconductor device according to the first aspect of the present invention, the resin film forming layer including the sheet is adhered to a workpiece, and the workpiece is cut into a wafer to form a layer of the resin film. The step of remaining on the wafer is carried out by the support sheet, and the step of placing the wafer on the die pad portion or another wafer via the resin film forming layer is preferred.
以下,以使用矽晶圓作為工件之例說明。 Hereinafter, an example in which a tantalum wafer is used as a workpiece will be described.
對晶圓表面的電路形成、可藉由包含蝕刻法、舉離法等由先前泛用的方法之各種方法進行。接著,將半導體晶圓的電路面的反對面(背面)研削。研削法,並無特別限定,可藉由使用研磨機等的習知手段進行研削。背面研削時,為保護表面的電路,於電路面黏貼被稱為表面保護板片的接著板片。背面研削,係將晶圓的電路面側(即表面保護板片側),藉由吸盤等固定,將沒有形成電路的背面側以研磨機研削。晶圓的研削後的厚度,並無特別限定,通常為50~500μm程度。 The circuit formation on the surface of the wafer can be performed by various methods including the etching method, the lift-off method, and the like, which have been conventionally used. Next, the opposing surface (back surface) of the circuit surface of the semiconductor wafer is ground. The grinding method is not particularly limited, and the grinding can be carried out by a conventional means such as a grinder. In the back grinding, in order to protect the surface of the circuit, an adhesive sheet called a surface protection sheet is adhered to the circuit surface. In the back grinding, the circuit surface side of the wafer (that is, the surface protection sheet side) is fixed by a suction pad or the like, and the back side on which the circuit is not formed is ground by a grinder. The thickness of the wafer after grinding is not particularly limited, and is usually about 50 to 500 μm.
之後,按照必要,去除背面研削時所產生的破碎層。去除破碎層,可藉由化學蝕刻或電漿蝕刻等進行。 Thereafter, the crushed layer generated at the time of back grinding is removed as necessary. The removal of the fracture layer can be performed by chemical etching or plasma etching.
接著電路形成及背面研削,於晶圓的背面黏貼樹脂膜形成用板片的樹脂膜形成層。黏貼方法,並無特別限定,例如,於第6圖所示之步驟,將樹脂膜形成層黏貼於半導體晶圓。 Then, the circuit is formed and the back surface is ground, and a resin film forming layer of the resin film forming sheet is adhered to the back surface of the wafer. The bonding method is not particularly limited. For example, in the step shown in Fig. 6, the resin film forming layer is adhered to the semiconductor wafer.
第6(a)~(d)圖,係進行將支持板片11與樹脂膜形成層12的層積體黏貼於半導體晶圓32之作業之一系列步驟圖。如第6(a)圖所示,樹脂膜形成用板片10,係剝離薄膜13作用作為載體薄膜,以二個捲筒62及66,及剝離板64支持,其一端連接圓柱狀的捲芯44的狀態捲繞形成第1捲筒42,於另一端連接圓柱狀的捲芯54的狀態捲繞形成第2捲筒52。然後,於第2捲筒52的捲芯54,連接有使該捲芯54旋轉的捲芯驅動用馬達(無圖示),剝離支持板片11與樹脂膜形成層12之層積體後之剝離薄膜13以既定的速度捲繞。 The sixth (a) to (d) drawings are a series of steps for performing a process of adhering the laminate of the support sheet 11 and the resin film forming layer 12 to the semiconductor wafer 32. As shown in Fig. 6(a), the resin film forming sheet 10, the release film 13 functions as a carrier film, supported by two rolls 62 and 66, and a peeling plate 64, one end of which is connected to a cylindrical core. The state of 44 is wound to form the first reel 42, and the second reel 52 is wound in a state in which the cylindrical core 54 is connected to the other end. Then, a core driving motor (not shown) that rotates the winding core 54 is connected to the winding core 54 of the second reel 52, and the laminated body of the supporting sheet 11 and the resin film forming layer 12 is peeled off. The release film 13 is wound at a predetermined speed.
首先,使捲芯驅動用馬達旋轉,則第2捲筒52的捲芯54旋轉,將捲繞於第1捲筒42的捲芯44的樹脂膜形成用板片10拉出第1捲筒42的外部。然後,拉出的樹脂膜形成用板片10,將導向配置於移動式的載台上的圓板狀半導體晶圓32及將其包圍配置之環形框34上。 First, when the core driving motor is rotated, the winding core 54 of the second reel 52 is rotated, and the resin film forming sheet 10 wound around the winding core 44 of the first reel 42 is pulled out of the first reel 42. The outside. Then, the stretched resin film forming sheet 10 is guided to the disk-shaped semiconductor wafer 32 disposed on the movable stage and the annular frame 34 which is disposed to surround the disk.
其次,由剝離薄膜13,剝離支持板片11及樹脂膜形成層12所組成之層積體。此時,如第6(b)圖所示,由樹脂膜形成用板片10之剝離薄膜13側抵接剝離板64,剝離薄膜13向剝離板64側以切入部D1為起點以銳角彎曲,於剝離薄膜13與支持板片11及樹脂膜形成層12所組成之層積體之間作出剝離起點。再者,為有效地作出剝離起點,亦可對剝離薄膜13與支持板片11及樹脂膜形成層12所組成之層積體的境界面吹氣。 Next, a laminate composed of the support sheet 11 and the resin film forming layer 12 is peeled off from the release film 13. At this time, as shown in Fig. 6(b), the peeling film 13 is abutted against the peeling film 64 from the side of the peeling film 13 of the resin film forming sheet 10, and the peeling film 13 is bent at an acute angle from the side of the peeling plate 64 with the cut portion D1 as a starting point. A peeling origin is formed between the peeling film 13 and the laminate of the support sheet 11 and the resin film forming layer 12. Further, in order to effectively obtain the peeling starting point, the boundary between the peeling film 13 and the laminated sheet composed of the supporting sheet 11 and the resin film forming layer 12 may be blown.
如此地由剝離薄膜13與支持板片11及樹脂膜形成層12所組成之層積體之間作出剝離起點之後,如第6(c)圖 所示,進行支持板片11及樹脂膜形成層12所組成之層積體之黏貼,使樹脂膜形成層12與環形框34及半導體晶圓32密著。此時,藉由捲筒68將支持板片11及樹脂膜形成層12所組成之層積體與半導體晶圓32壓接。然後,第6(d)圖所示,完成支持板片11及樹脂膜形成層12所組成之層積體對半導體晶圓32上之黏貼,得到附有層積體之半導體晶圓。 After the peeling starting point is formed between the laminated body composed of the peeling film 13 and the supporting sheet 11 and the resin film forming layer 12, as shown in Fig. 6(c) As shown in the above, the laminate of the support sheet 11 and the resin film forming layer 12 is adhered, and the resin film forming layer 12 is adhered to the ring frame 34 and the semiconductor wafer 32. At this time, the laminate of the support sheet 11 and the resin film forming layer 12 is pressure-bonded to the semiconductor wafer 32 by the reel 68. Then, as shown in Fig. 6(d), the laminate of the support sheet 11 and the resin film forming layer 12 is adhered to the semiconductor wafer 32 to obtain a semiconductor wafer with a laminate.
可藉由以上程序,以自動化的步驟連續進行,支持板片11及樹脂膜形成層12所組成之層積體對半導體晶圓32的黏貼。進行如此之支持板片11及樹脂膜形成層12所組成之層積體對半導體晶圓32的黏貼作業的裝置,可舉例如,Lintec(股)製之RAD-2500(商品名)等。 The above process can be continuously performed in an automated step to support the adhesion of the laminate of the sheet 11 and the resin film forming layer 12 to the semiconductor wafer 32. For example, a device such as a RAD-2500 (trade name) manufactured by Lintec Co., Ltd., which is a device for supporting the adhesion of the laminate of the support sheet 11 and the resin film forming layer 12 to the semiconductor wafer 32, may be used.
然後,藉由如此之步驟,將支持板片11及樹脂膜形成層12所組成之層積體黏貼於半導體晶圓32時,藉由使用於剝離薄膜13形成切入部D1之樹脂膜形成用板片10,樹脂膜形成層12之外周到達剝離板的尖端部分時,即使以較厚的剝離薄膜,可以切入部D1作為起點將剝離薄膜13以銳角彎曲,容易在剝離薄膜13與支持板片11及樹脂膜形成層12所組成之層積體之間作出剝離起點。結果,可充分抑制支持板片11及樹脂膜形成層12所組成之層積體發生由剝離薄膜13之剝離不良。 Then, when the laminate of the support sheet 11 and the resin film forming layer 12 is adhered to the semiconductor wafer 32 by such a step, the resin film forming sheet for forming the cut portion D1 by the release film 13 is formed. In the sheet 10, when the outer periphery of the resin film forming layer 12 reaches the tip end portion of the peeling sheet, the peeling film 13 can be bent at an acute angle with the cut portion D1 as a starting point even with a thick peeling film, and the peeling film 13 and the supporting sheet 11 are easily formed. A peeling starting point is formed between the laminates composed of the resin film forming layer 12. As a result, it is possible to sufficiently suppress the occurrence of peeling failure of the laminate of the support sheet 11 and the resin film forming layer 12 by the release film 13.
樹脂膜形成層在室溫沒有黏性時,亦可適當加溫(雖並非限定,但以40~80℃為佳)。 When the resin film forming layer has no viscosity at room temperature, it may be appropriately heated (not limited, it is preferably 40 to 80 ° C).
接著,於樹脂膜形成層調合能量線硬化性成分(B2)作為硬化性成分(B)時,對樹脂膜形成層由支持板片側照射能 量線,將樹脂層形成層預備性地硬化,提升樹脂膜形成層的凝聚力,降低樹脂膜形成層與支持板片之間的接著力亦可。 When the energy ray-curable component (B2) is blended as the curable component (B) in the resin film forming layer, the resin film forming layer is irradiated with the support sheet side. In the measuring wire, the resin layer forming layer is preliminarily hardened to increase the cohesive force of the resin film forming layer, and the adhesion between the resin film forming layer and the supporting sheet may be lowered.
之後,使用切片鋸等的切斷手段,切斷上述的半導體晶圓得到半導體晶片。此時,切斷深度,係半導體晶圓的厚度,與樹脂膜形成層的厚度的合計及加上切片鋸的磨損份的深度。 Thereafter, the semiconductor wafer is cut by using a cutting means such as a dicing saw to obtain a semiconductor wafer. In this case, the depth of cut is the sum of the thickness of the semiconductor wafer and the thickness of the resin film forming layer, and the depth of the worn portion of the dicing saw.
再者,能量線照射,以半導體晶圓之黏貼之後,半導體晶片的剝離(拾取)前之任意階段進行均可,例如可於切割之後進行,或亦可於下述擴展步驟之後進行,惟在黏貼半導體晶圓之後進行切割之前進行為佳。再者,亦可將能量線照射分成複數次。 Furthermore, the energy line irradiation may be performed at any stage before the peeling (pick-up) of the semiconductor wafer after the semiconductor wafer is pasted, for example, after the cutting, or may be performed after the expansion step described below. It is preferable to perform the cutting before bonding the semiconductor wafer. Furthermore, the energy line illumination can also be divided into a plurality of times.
接著,按照必要,進行樹脂膜形成用板片的擴展,則半導體晶片間隔擴張,可更加容易進行半導體晶片的拾取。此時,於樹脂膜形成層與支持板片之間發生偏移,減少樹脂膜形成層與支持板片之間的接著力,提升半導體晶片的拾取性。如此地進行半導體晶片的拾取,則可使切斷的樹脂膜形成層固著殘存於半導體晶片背面由支持板片剝離。 Then, if the sheet for forming a resin film is expanded as necessary, the semiconductor wafer is expanded at intervals, and the semiconductor wafer can be picked up more easily. At this time, a shift occurs between the resin film forming layer and the supporting sheet, and the adhesion between the resin film forming layer and the supporting sheet is reduced, and the pick-up property of the semiconductor wafer is improved. When the semiconductor wafer is picked up as described above, the cut resin film forming layer can be adhered to the back surface of the semiconductor wafer and peeled off from the support sheet.
接著,經由樹脂膜形成層,將半導體晶片載置於導線架的晶粒墊上或其他的半導體晶片(下層晶片)表面(以下,將載置晶片之晶粒墊或下層晶片表面記載為「晶片搭載部」)。 Next, the semiconductor wafer is placed on the die pad of the lead frame or the surface of another semiconductor wafer (lower wafer) via the resin film forming layer (hereinafter, the die pad or the lower wafer surface on which the wafer is placed is described as "wafer mounting" unit").
載置時之壓力,通常為1kPa~200MPa。此外,晶片搭載部,可於載置半導體晶片之前加熱或於載置之後加熱。加熱溫度,通常為80~200℃,以100~180℃為佳,加熱時間通 常為0.1秒~5分鐘,以0.5秒~3分鐘為佳。 The pressure at the time of mounting is usually from 1 kPa to 200 MPa. Further, the wafer mounting portion may be heated before being placed on the semiconductor wafer or heated after being placed. Heating temperature, usually 80~200°C, preferably 100~180°C, heating time pass It is usually 0.1 seconds to 5 minutes, preferably 0.5 seconds to 3 minutes.
將半導體晶片載置於晶片搭載部之後,可按照必要進一步進行加熱。此時之加熱條件,係上述加熱溫度的範圍,加熱時間通常為1~180分,以10~120分為佳。 After the semiconductor wafer is placed on the wafer mounting portion, it can be further heated as necessary. The heating condition at this time is in the range of the above heating temperature, and the heating time is usually from 1 to 180 minutes, preferably from 10 to 120.
此外,亦可於載置後不進行加熱處理作成假接著狀態,以在於封裝製造通常進行的樹脂封裝的加熱使樹脂膜形成層硬化。藉由經由如此之步驟,使樹脂膜形成層硬化,可得半導體晶片與晶片搭載部強固地接著之半導體裝置。由於樹脂膜形成層,在晶粒接合條件下係流動化,故可充分埋入晶片搭載部的凹凸,可防止空隙的發生而提高半導體裝置的可靠度。 Further, the resin film forming layer may be cured by heating in a resin package which is usually performed by packaging and manufacturing, without performing heat treatment after mounting. By performing the above steps, the resin film forming layer is cured, whereby a semiconductor device in which the semiconductor wafer and the wafer mounting portion are strongly adhered can be obtained. Since the resin film forming layer is fluidized under the grain bonding conditions, the unevenness of the wafer mounting portion can be sufficiently buried, and the occurrence of voids can be prevented, and the reliability of the semiconductor device can be improved.
此外,關於第2本發明之半導體裝置之製造方法,係將樹脂膜形成用板片的樹脂膜形成層,黏貼於表面形成電路之半導體晶圓的背面,之後,得到於背面具有樹脂膜之半導體晶片為佳。該樹脂膜,係半導體晶片的保護膜。此外,關於本發明之半導體裝置之製造方法,較佳的是進一步包含以下步驟(1)~(3),將步驟(1)~(3)以任意順序進行為特徵。 In the method of manufacturing a semiconductor device according to the second aspect of the invention, the resin film forming layer of the resin film forming sheet is adhered to the back surface of the semiconductor wafer having the surface forming circuit, and then the semiconductor having the resin film on the back surface is obtained. The chip is better. This resin film is a protective film of a semiconductor wafer. Further, in the method of manufacturing a semiconductor device of the present invention, it is preferable to further include the following steps (1) to (3), and the steps (1) to (3) are performed in an arbitrary order.
步驟(1):將樹脂膜形成層或樹脂膜,與支持板片,剝離;步驟(2):使樹脂膜形成層硬化得到樹脂膜;步驟(3):將半導體晶圓,與切割樹脂膜形成層或樹脂膜切割。 Step (1): forming a resin film forming layer or a resin film, and supporting the sheet, peeling; Step (2): curing the resin film forming layer to obtain a resin film; Step (3): semiconductor wafer, and cutting resin film Forming a layer or a resin film to cut.
首先,於半導體晶圓的背面,黏貼樹脂膜形成用板片之樹脂膜形成層。該步驟,與在於上述第1半導體裝置的製造方法之黏貼步驟相同。 First, a resin film forming layer of a sheet for forming a resin film is adhered to the back surface of the semiconductor wafer. This step is the same as the pasting step in the method of manufacturing the first semiconductor device described above.
之後,將步驟(1)~(3)以任意順序進行。例如,將 步驟(1)~(3)以步驟(1)、(2)、(3)的順序;步驟(2)、(1)、(3)順序;步驟(2)、(3)、(1);步驟(3)、(2)、(1)或步驟(3)、(1)、(2)的順序之任意一個順序進行。關於該製程的細節,如日本特開2002-280329號公報所述。以其一例,以步驟(1)、(2)、(3)的順序進行之情形說明。 Thereafter, steps (1) to (3) are performed in an arbitrary order. For example, Steps (1) to (3) in the order of steps (1), (2), (3); steps (2), (1), (3); steps (2), (3), (1) Steps (3), (2), (1) or steps (3), (1), (2) are performed in any order. Details of the process are as described in Japanese Laid-Open Patent Publication No. 2002-280329. An example of this is described in the order of steps (1), (2), and (3).
首先,於表面形成電路之半導體晶圓的背面,黏貼樹脂膜形成用板片之樹脂膜形成層。接著,由樹脂膜形成層剝離支持板片,得到半導體晶圓與樹脂膜形成層之層積體。 First, a resin film forming layer of a sheet for forming a resin film is adhered to the back surface of the semiconductor wafer on which the circuit is formed. Next, the support sheet is peeled off from the resin film forming layer to obtain a laminate of the semiconductor wafer and the resin film forming layer.
接著,將樹脂膜形成層硬化,於晶圓的全面形成樹脂膜。於樹脂膜形成層,使用熱硬化性成分(B1)作為硬化性成分(B)時,藉由熱硬化使樹脂膜形成層硬化。調合能量線硬化性成分(B2)作為硬化性成分(B)時,可將樹脂膜形成層的硬化,藉由能量線照射進行,並用熱硬化性成分(B1)與能量線硬化性成分(B2)時,可同時進行加熱及能量線照射的硬化,亦可逐次進行。照射之能量線,可舉紫外線(UV)或電子線(EB)等,使用紫外線為佳。結果,於晶圓的背面形成由硬化樹脂組成之樹脂膜,與晶圓單獨之情形相比可提升強度,故可減少變薄的晶圓在處理時候之破損。再者,與於晶圓或晶片的背面,將直接樹脂膜用的塗佈液塗佈.披膜化之塗層法相比,樹脂膜的厚度均勻性優良。 Next, the resin film forming layer is cured to form a resin film over the entire surface of the wafer. When the thermosetting component (B1) is used as the curable component (B) in the resin film forming layer, the resin film forming layer is cured by thermal curing. When the energy ray-curable component (B2) is blended as the curable component (B), the resin film-forming layer can be cured by energy ray irradiation, and the thermosetting component (B1) and the energy ray-curable component (B2) can be used. When it is heated, it can be hardened by heating and energy ray irradiation at the same time, or it can be carried out one by one. The energy beam to be irradiated may be ultraviolet (UV) or electron beam (EB), and ultraviolet rays are preferred. As a result, a resin film composed of a hardened resin is formed on the back surface of the wafer, and the strength can be improved as compared with the case of the wafer alone, so that the damage of the thinned wafer at the time of processing can be reduced. Furthermore, the coating liquid for the direct resin film is applied to the back surface of the wafer or wafer. The thickness uniformity of the resin film is superior to that of the overcoat coating method.
之後,將半導體晶圓與樹脂膜之層積體,切割成形成在晶圓表面的每個電路。切割,係將晶圓與樹脂膜一起進行切斷。晶圓的切割,可藉由使用切割板片之常法進行。結果,可得於背面具有樹脂膜之半導體晶片。 Thereafter, the laminate of the semiconductor wafer and the resin film is cut into each circuit formed on the surface of the wafer. The cutting is performed by cutting the wafer together with the resin film. Wafer dicing can be performed by the usual method of using a dicing sheet. As a result, a semiconductor wafer having a resin film on the back surface can be obtained.
接著,亦可於樹脂膜雷射刻字。雷射刻字可藉由雷射標記法進行,藉由雷射光的照射削去保護膜的表面,於保護膜標記品號等。再者,雷射刻字,亦可在使樹脂膜形成層硬化前進行。 Then, you can also laser engraving on the resin film. The laser engraving can be performed by laser marking, and the surface of the protective film is removed by irradiation of laser light, and the article number is marked on the protective film. Further, the laser engraving may be performed before the resin film forming layer is hardened.
最後,將切割之晶片以夾頭等的泛用手段拾取,得到於背面具有樹脂膜之半導體晶片。然後,將半導體晶片以面朝下模式構裝於既定的載台上,而製造半導體裝置。此外,可藉由將於背面具有樹脂膜之半導體晶片,接著於晶粒墊部或其他的半導體晶片等的其他的構件上(晶片搭載部上),而製造半導體裝置。根據如此之本發明,可將厚度均勻性高的樹脂膜,簡便地形成於晶片背面,而於切割步驟或封裝之後不容易發生裂紋。 Finally, the diced wafer is picked up by a general purpose such as a chuck to obtain a semiconductor wafer having a resin film on the back surface. Then, the semiconductor wafer is mounted on a predetermined stage in a face-down mode to fabricate a semiconductor device. Further, the semiconductor device can be manufactured by a semiconductor wafer having a resin film on the back surface, and then on a die pad portion or another member such as a semiconductor wafer (on the wafer mounting portion). According to the present invention as described above, the resin film having a high thickness uniformity can be easily formed on the back surface of the wafer, and cracks are less likely to occur after the cutting step or the package.
再者,於半導體晶圓的背面,黏貼樹脂膜形成用板片之樹脂膜形成層之後,於步驟(1)之前進行步驟(3)時,樹脂膜形成用板片,可作用作為切割板片。即,可用於作為切割步驟時用於支持半導體晶圓的板片。此種情況,於樹脂膜形成用板片的內周部經由樹脂膜形成層黏貼半導體晶圓,藉由樹脂膜形成用板片的外周部與環形框等的其他的夾具接合,將黏貼於半導體晶圓的樹脂膜形成用板片固定於裝置,而進行切割。 Further, after the resin film forming layer of the resin film forming sheet is pasted on the back surface of the semiconductor wafer, the step of performing the step (3) before the step (1), the resin film forming sheet can function as a cutting sheet. . That is, it can be used as a sheet for supporting a semiconductor wafer as a cutting step. In this case, the semiconductor wafer is adhered to the inner peripheral portion of the resin film-forming sheet via the resin film forming layer, and the outer peripheral portion of the resin film-forming sheet is bonded to another jig such as a ring frame to adhere to the semiconductor. The sheet for forming a resin film of the wafer is fixed to the device to perform cutting.
再者,以步驟(3)、(1)、(2)的順序進行時,亦可將於背面具有樹脂膜形成層的半導體晶片以面朝下模式在既定的載台上構裝之後,利用在於封裝製造通常進行之樹脂封裝的加熱使樹脂膜形成層硬化。 Further, in the case of the steps (3), (1), and (2), the semiconductor wafer having the resin film forming layer on the back surface may be used after being mounted on a predetermined stage in a face-down mode. The resin film forming layer is hardened by the heating of the resin package which is usually performed by the package manufacturing.
Claims (3)
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JP7264593B2 (en) * | 2018-01-30 | 2023-04-25 | 日東電工株式会社 | Semiconductor back adhesion film and dicing tape integrated semiconductor back adhesion film |
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