KR101260108B1 - Tape for processing wafer - Google Patents

Abstract

The present invention provides an adhesive film and a wafer processing tape capable of reducing chipping such as chip cracking and chipping, regardless of the frequency of vibration caused by the dicing blade during dicing, that is, the rotational speed of the dicing blade.
The adhesive film of the present invention and the tape for wafer processing have an approximate Y = bX ^{a in} which loss tangent tanδ at 80 ° C. of the adhesive layer is Y, frequency is X (Hz), and Y is a function of X. When it shows, a is 0.18 or less and b is 0.25 or less.

Description

Tape for Wafer Processing {TAPE FOR PROCESSING WAFER}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer processing tape used in both the dicing step of cutting a semiconductor wafer into a semiconductor element (chip) and the die bonding step of bonding the cut chip to a lead frame or another chip.

In the manufacturing process of a semiconductor device, a process of cutting (dicing) a semiconductor wafer into chips, a process of picking up the cut semiconductor elements (chips), and die bonding (bonding the picked-up chips to a lead frame or a package substrate) ) The process is carried out.

As a tape for wafer processing used for the manufacturing process of the said semiconductor device, the adhesive film for wafer adhesion in which the adhesive layer and the adhesive bond layer were formed in this order on the base film is known (for example, refer following patent document 1).

However, when a chip is cut by a high-speed rotating thin grindstone (dicing blade), which is the most common dicing method, adjacent chips are brought into contact with each other due to rotational vibration of the dicing blade, resulting in chip cracking. There has been a problem that chipping such as chip breakage occurs.

In order to reduce the chipping at the time of dicing, the thickness of a semiconductor element is made into W (micrometer), the thickness of an adhesive bond layer is A (micrometer), and the storage elastic modulus at 25 degreeC after hardening of an adhesive bond layer is E (GPa). When it is set as W, the tape for wafer processing whose value of Q represented by WxE / A = Q is 0.5-80 is known (for example, refer following patent document 2).

Japanese Patent Laid-Open No. 2002-226796 Japanese Patent Laid-Open No. 2005-026547

In the tape for wafer processing of the said patent document 2, the frequency and temperature rise of the rotational vibration by a dicing blade are not considered, for example, when it is going to rotate a dicing blade at high speed, a chip crack and a chip notch There was a problem in that chipping, etc., could not be prevented.

Accordingly, it is an object of the present invention to provide a tape for wafer processing which can reduce chipping, such as chip cracking or chipping, regardless of the vibration frequency caused by the dicing blade during dicing, that is, the rotational speed of the dicing blade. .

MEANS TO SOLVE THE PROBLEM In order to solve the said subject, the adhesive film which concerns on this invention is an adhesive film which has an adhesive bond layer, and is used for manufacture of a semiconductor device, makes loss tangent tanδ in 80 degreeC of the said adhesive bond layer Y, and sets frequency to X. When (Hz) is expressed by the approximation formula Y = bX ^{a in} which Y is a function of X, a is 0.18 or less and b is greater than 0 and 0.25 or less.

Moreover, in order to solve the said subject, the semiconductor processing tape by this invention is a semiconductor processing tape by which an adhesive bond layer is laminated | stacked on the said adhesive layer of the adhesive tape in which the adhesive layer is formed on a base material sheet, and 80 of the said adhesive bond layer is carried out. When the loss tangent tan δ at ° C is Y, the frequency is X (Hz), and Y is expressed as an approximation Y = bX ^a with ^a function of X, a is 0.18 or less and b is greater than 0 0.25 It is characterized by the following. It is preferable that the frequency X is more than 0 Hz and 1000 Hz or less.

According to the present invention, a tape for wafer processing which can reduce chipping, such as chip cracking and chipping, can be realized regardless of the frequency of vibration caused by the dicing blade during dicing, that is, the rotational speed of the dicing blade. Thereby, the rotation speed of a desired dicing blade can be selected.

1 is a cross-sectional view showing a wafer processing tape according to an embodiment of the present invention.
2 is a view in which a semiconductor wafer is bonded onto a wafer processing tape;
3 is a view for explaining a dicing step;
4 is a view for explaining an expansion process.
5 is a diagram for explaining a pickup process.
Fig. 6 is a diagram showing an example of a graph in which loss tangent tanδ at 80 ° C. of the adhesive bond layer is Y, frequency is X, and Y is a function of X;

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described with reference to the drawings. 1 is a cross-sectional view showing a wafer processing tape 10 according to an embodiment. The tape 10 for wafer processing has the adhesive film 12 which consists of a base film 12a and the adhesive layer 12b formed on it, and the adhesive bond layer 13 laminated | stacked on this adhesive film 12. As shown in FIG. Thus, in the tape 10 for a wafer process, the base film 12a, the adhesive layer 12b, and the adhesive bond layer 13 are formed in this order.

In addition, the adhesive layer 12b may be comprised by one adhesive layer, and may be comprised by what laminated | stacked two or more adhesive layers. In addition, in FIG. 1, in order to protect the adhesive bond layer 13, the state in which the peeling liner 11 is provided in the tape 10 for a wafer process is shown.

The adhesive film 12 and the adhesive bond layer 13 may be cut | disconnected (preliminary cutting) in predetermined shape previously according to a use process and an apparatus. The tape for a wafer process of this invention includes the form cut | disconnected every minute of a semiconductor wafer, and the form which wound the long sheet in which this was formed in multiple numbers on a roll.

The tape for wafer processing 10 which concerns on this embodiment is characterized by having the following structures.

When the loss tangent tan δ at 80 ° C. of the adhesive layer 13 is Y, the frequency is X, and Y is expressed as ^a function of X, a is 0.18 or less. B in an approximation formula is 0.25 or less.

In general, when the distortion ε is periodically applied to the sample, if the sample is a complete elastic body, the stress σ corresponding thereto does not occur in time and appears in the same phase. However, if a viscous element is present in the sample, a delay (phase difference δ between the input of the distortion and the response) occurs in the response. The distortion ε and the stress σ with this temporal delay are expressed as a complex elastic modulus (E *) by Equation 1 below.

The loss tangent tan δ used in the present invention is represented by the following equation (2).

Where E 'is the storage modulus and E "is the loss modulus.

The storage modulus E 'exhibits elastic properties, and the loss modulus E "and the loss tangent tanδ represent viscous, i.e., energy loss.

As described above, the loss tangent tanδ represented by the ratio (E "/ E ') of the loss modulus E" corresponding to the viscosity and the storage modulus E' corresponding to the elasticity reflects vibration absorption, and the larger the value, the higher the viscosity. Vibration absorption is improved (softened). Conversely, the smaller the value, the lower the viscosity (harder) and the lower the vibration absorbency.

The present inventors have found that the loss tangent tan δ at 80 ° C. is greatly increased as the frequency is increased, and that the adhesive layer is not greatly increased. The graph which shows an example of the frequency dependent characteristic of the loss tangent tan-delta in 80 degreeC is shown in FIG. The frequency dependent characteristic can be expressed by the approximation formula Y = bX ^{a in} which loss tangent tanδ at 80 ° C. of the adhesive layer is Y, frequency is X, and Y is a function of X. The higher a in the approximation formula, the higher the loss tangent tan δ increases when a high frequency vibration is applied. And when a exceeds 0.18, since the recoverability of the adhesive bond layer in 600 Hz or more falls, the energy applied to the chip which is hard to deform | transform increases. As a result, the chip releases energy by causing chipping. Therefore, when a exceeds 0.18, the generation rate of chipping in the high frequency region corresponding to the rotational speed of the blade increases. Similarly, as b in the above approximation formula increases, loss tangent tan δ increases when vibration of high frequency is applied, and chipping in a high frequency region easily occurs when it exceeds 0.25.

Hereinafter, each component of the tape 10 for a wafer process of this embodiment is demonstrated in detail.

(Adhesive layer)

After the semiconductor wafer 1 or the like is bonded and diced, the adhesive layer 13 is peeled off from the adhesive film 12 and adhered to the semiconductor chip 2 when the semiconductor chip 2 is picked up. It is used as an adhesive when fixing 2) to a board | substrate or a lead frame. Therefore, the adhesive bond layer 13 has peelability which can be peeled from the adhesive film 12 in the state of being stuck to the individual fragmented semiconductor chip 2 in a pick-up process, and also in a die bonding process, Since the semiconductor chip 2 is adhesively fixed to a board | substrate or a lead frame, it has sufficient adhesive reliability.

The adhesive layer 13 is a film formed of an adhesive in advance, for example, a known polyimide resin, polyamide resin, polyetherimide resin, polyamideimide resin, polyester resin, polyesterimide resin, Phenoxy resins, polysulfone resins, polyether sulfone resins, polyphenylene sulfide resins, polyether ketone resins, chlorinated polypropylene resins, acrylic resins, polyurethane resins, epoxy resins, polyacrylamide resins, melamine resins, and mixtures thereof Can be used.

It is preferable to use an epoxy resin especially from the point which the heat resistance after hardening is favorable. What is necessary is just to harden an epoxy resin and to show an adhesive effect. As an epoxy resin, you may add a polyfunctional epoxy resin for the purpose of high Tg (glass transition temperature), and a phenol novolak-type epoxy resin, a cresol novolak-type epoxy resin, etc. are illustrated as a polyfunctional epoxy resin. The hardening | curing agent of an epoxy resin can use what is normally used as a hardening | curing agent of an epoxy resin, Bisphenol A which is a compound which has 2 or more of amine, a polyamide, an acid anhydride, a polysulfide, a boron trifluoride, and a phenolic hydroxyl group in 1 molecule, Bisphenol F, bisphenol S, etc. are mentioned. In particular, since it is excellent in the corrosion resistance at the time of moisture absorption, it is preferable to use phenol novolak resin, bisphenol novolak resin, etc. which are phenol resins. Moreover, using a hardening accelerator with a hardening | curing agent is preferable at the point which can shorten the time of the heat processing for hardening. As a curing accelerator, 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-phenylimidazolium trimellitate Bases, such as various imidazoles, can be used.

In addition, in order to enhance the adhesion to the semiconductor chip 2 or the lead frame 20, it is preferable to add a silane coupling agent or a titanium coupling agent as an additive to the material or a mixture thereof. In addition, a filler may be added for the purpose of improving heat resistance and adjusting fluidity. Such fillers include silica, alumina, antimony oxide and the like.

In order to set the value of a to 0.18 or less and the value of b to 0.25 or less, for example, it is effective to control the ratio of the epoxy equivalent and the hydroxyl equivalent, the type of the epoxy skeleton, the particle size of the filler, and the amount of the silane coupling agent. The ratio of hydroxyl equivalent to epoxy equivalent is preferably 0.5 to 2.0, more preferably 0.8 to 1.2. The epoxy skeleton is preferably cresol novolak and naphthalene, but more preferably naphthalene. The particle size of the filler is preferably less than 1 µm, more preferably 0.1 µm or less. The amount of the silane coupling agent is preferably less than 1.5% by weight, more preferably 1% by weight or less.

Although the thickness in particular of the adhesive bond layer 13 is not restrict | limited, Usually, about 5-100 micrometers is preferable. In addition, although the adhesive bond layer 13 may be laminated | stacked on the whole surface of the adhesive layer 12b of the adhesive film 12, the adhesive bond layer cut | disconnected (precut | cut) the shape according to the semiconductor wafer 1 to be bonded previously is carried out. You may laminate | stack on a part of adhesive layer 12b. When the adhesive layer 13 cut | disconnected in the shape according to the semiconductor wafer 1 is laminated | stacked, as shown in FIG. 2, the part to which the semiconductor wafer 1 is bonded is the adhesive bond layer 13, and is used for dicing The adhesive layer 13 does not exist in the part to which the ring frame 20 is bonded, and only the adhesive layer 12b of the adhesive film 12 exists. Generally, since the adhesive bond layer 13 is hard to peel from a to-be-adhered body, the ring frame 20 can be bonded to the adhesive film 12 by using the adhesive layer 13 precut | disconnected, and the sheet | seat after use An effect is obtained that it is difficult to generate an adhesive residue to the ring frame at the time of peeling.

(Adhesive film)

The adhesive film 12 has sufficient adhesive force to prevent the semiconductor wafer 1 from peeling off when dicing the semiconductor wafer 1, and easily picks up the semiconductor chip 2 after dicing from the adhesive layer 13. It has a low adhesive force so that it can be peeled off. In this embodiment, as shown in FIG. 1, the adhesive film 12 used what provided the adhesive layer 12b in the base film 12a.

The base film 12a of the pressure-sensitive adhesive film 12 can be used without particular limitation as long as it is a conventionally known material. As described later, in the present embodiment, as the pressure-sensitive adhesive layer 12b, a radiation curable material among energy curable materials In the point of using, the one having radiation permeability is used.

For example, as a material of the base film 12a, polyethylene, polypropylene, ethylene-propylene copolymer, polybutene-1, poly-4-methylpentene-1, ethylene-vinyl acetate copolymer, ethylene-ethyl acrylate copolymer Homopolymers or copolymers of α-olefins such as ethylene-methyl acrylate copolymers, ethylene-acrylic acid copolymers and ionomers or mixtures thereof, polyurethanes, styrene-ethylene-butene copolymers or pentene-based copolymers, polyamides Thermoplastic elastomers such as polyol copolymers, and mixtures thereof. In addition, the base film 12a may be a mixture of two or more materials selected from these groups, or may be a single layer or a multilayer. Although the thickness of the base film 12a is not specifically limited, Although it may set suitably, 50-200 micrometers is preferable.

In this embodiment, since the adhesive layer 12b is hardened by irradiating the adhesive film 12 with radiation, such as an ultraviolet-ray, since it is easy to peel off the adhesive layer 12b from the adhesive bond layer 13, an adhesive layer The resin of (12b) includes known chlorinated polypropylene resins, acrylic resins, polyester resins, polyurethane resins, epoxy resins, addition-reacting organopolysiloxane resins, silicone acrylate resins, ethylene-vinyl acetate resins used in pressure-sensitive adhesives. A radiation polymerizable compound is suitably used for various elastomers such as copolymers, ethylene-ethyl acrylate copolymers, ethylene-methyl acrylate copolymers, ethylene-acrylic acid copolymers, polyisoprene, styrene-butadiene copolymers, hydrogenated substances thereof, and mixtures thereof. It is preferable to mix | blend and manufacture an adhesive. Moreover, you may add various surfactant and surface leveling agent. Although the thickness of an adhesive layer is not specifically limited, Although it may set suitably, 5-30 micrometers is preferable.

The radiation polymerizable compound is a low molecular weight compound having at least two or more photopolymerizable carbon-carbon double bonds in a molecule that can be three-dimensionally networked by light irradiation, or a photopolymerizable carbon-carbon double bond group. The polymer and oligomer which have a substituent are used. Specifically, trimethylolpropane triacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, 1,4-butylene Copolymers of acrylic acid and various acrylic esters, such as silicone acrylate, such as glycol diacrylate, 1,6 hexanediol diacrylate, polyethyleneglycol diacrylate, and oligoester acrylate, are applicable.

In addition to the above acrylate compounds, urethane acrylate oligomers may also be used. The urethane acrylate oligomer is a polyol compound such as a polyester type or a polyether type, and a polyhydric isocyanate compound (for example, 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3- Acrylate or methacrylate which has a hydroxyl group to the terminal isocyanate urethane prepolymer obtained by making xylylene diisocyanate, 1, 4- xylylene diisocyanate, diphenylmethane 4, 4- diisocyanate etc. react ( 2-hydroxyethyl acrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl acrylate, 2-hydroxypropyl methacrylate, polyethylene glycol acrylate, polyethylene glycol methacrylate, etc.) It is obtained by reacting. In addition, 2 or more types chosen from said resin may be mixed with the adhesive layer 12b.

Moreover, in addition to the radiation polymerizable compound which irradiates radiation to the adhesive film 12 to harden the adhesive layer 12b, resin of the adhesive layer 12b is suitably mix | blended an acrylic adhesive, a photoinitiator, a hardening | curing agent, etc., and an adhesive layer You may manufacture (12b).

When using a photoinitiator, for example, isopropyl benzoin ether, isobutyl benzoin ether, benzophenone, Michler's ketone, chloro thioxanthone, dodecyl thioxanthone, dimethyl thioxanthone, diethyl thioxanthone , Benzyl dimethyl ketal, α-hydroxycyclohexylphenyl ketone, 2-hydroxymethylphenyl propane and the like can be used. As for the compounding quantity of these photoinitiators, 0.01-5 mass parts is preferable with respect to 100 mass parts of acryl-type copolymers.

(How to use tape for wafer processing)

In the manufacturing process of a semiconductor device, the tape 10 for a wafer process is used as follows.

In FIG. 2, the semiconductor wafer 1 and the ring frame 20 are bonded to the tape 10 for wafer processing. First, as shown in FIG. 2, the pressure-sensitive adhesive layer 12b of the pressure-sensitive adhesive film 12 is attached to the ring frame 20, and the semiconductor wafer 1 is bonded to the adhesive layer 13. There is no restriction | limiting in these attachment order, You may adhere the ring layer 20 to the adhesive layer 12b of the adhesive film 12 after bonding the semiconductor wafer 1 to the adhesive bond layer 13. In addition, the adhesion of the adhesive film 12 to the ring frame 20 and the bonding of the semiconductor wafer 1 to the adhesive layer 13 may be simultaneously performed.

And the dicing process of the semiconductor wafer 1 is performed (FIG. 3), and the process of irradiating an energy ray, for example, an ultraviolet-ray to the adhesion film 12 is performed subsequently. Specifically, in order to dicing the semiconductor wafer 1 and the adhesive bond layer 13 by the dicing blade 21, the adsorption stage 22 makes the tape 10 for a wafer process the adhesive film 12 surface side. Adsorption support from the. And the semiconductor wafer 1 and the adhesive bond layer 13 are cut | disconnected by the dicing blade 21 by the semiconductor chip 2 unit, and it fragments individually, and an energy ray is irradiated from the lower surface side of the adhesive film 12 after that. do. By this energy ray irradiation, the adhesive layer 12b is hardened and its adhesive force is reduced. In addition, you may reduce the adhesive force of the adhesive layer 12b of the adhesive film 12 by external stimulation, such as heating, instead of irradiation of an energy ray. When the adhesive layer 12b is laminated | stacked and comprised by two or more adhesive layers, even if one layer or all layers in each adhesive layer are hardened by energy ray irradiation, even if it reduces the adhesive force of one layer or all layers in each adhesive layer, do.

Thereafter, as shown in FIG. 4, the expandable stretch of the pressure-sensitive adhesive film 12 holding the diced semiconductor chip 2 and the adhesive layer 13 in the radial direction and the circumferential direction of the ring frame 20 is obtained. Carry out the process. Specifically, with respect to the adhesive film 12 in the state which hold | maintained the several diced semiconductor chip 2 and the adhesive bond layer 13, the hollow cylindrical push-up member 30 is the adhesive film 12 Is raised from the lower surface side, and the adhesive film 12 is stretched in the circumferential direction of the ring frame 20. The semiconductor generated by expanding the distance between the semiconductor chips 2 by the expansion step, increasing the recognition of the semiconductor chips 2 by a CCD camera or the like, and contacting adjacent semiconductor chips 2 at the time of pick-up. Re-adhesion of chips can be prevented.

After performing an expand process, as shown in FIG. 5, the pick-up process of picking up the semiconductor chip 2 is performed, with the adhesive film 12 expanded. Specifically, the semiconductor chip 2 is pushed up by the pin 31 from the lower surface side of the adhesive film 12, and the semiconductor chip 2 is moved from the upper surface side of the adhesive film 12 to the adsorption jig 32. By adsorbing, the individually fragmented semiconductor chips 2 are picked up together with the adhesive layer 13.

And after performing a pick-up process, a die bonding process is performed. Specifically, the semiconductor chip 2 is adhered to a lead frame, a package substrate, or the like by the adhesive layer 13 picked up together with the semiconductor chip 2 in the pickup process.

(Example)

Next, although the Example of this invention is described, this invention is not limited to these Examples.

(Adhesive film)

<Base film>

As the film-shaped base film, an elastomer-added polypropylene having a thickness of 100 μm was used.

<Production of Adhesive Layer Composition>

An adhesive layer composition is a composition which 33 mass parts of polymer copolymers, 0.5 mass part of hardening | curing agents (isocyanate compound), 3 mass parts of photoinitiators, and 80 mass parts of solvents were added and mixed. The polymer copolymer is a copolymer of 2-ethylhexyl acrylate having a functional group having a radiation curable carbon-carbon double bond and 2-hydroxyalkyl acrylates, and has a glass transition point (Tg) of -53 ° C. The photoinitiator is 1-hydroxy-cyclohexyl-phenyl-ketone, and the solvent is toluene.

The adhesive layer composition was apply | coated so that the thickness after drying of an adhesive layer composition might be set to 10 micrometers on a base film, and it dried at 110 degreeC for 3 minutes, and manufactured the adhesive film.

(Adhesive film)

<Production of Adhesive Layer Composition>

Epoxy resin, phenol resin containing a hydroxyl group, an epoxy group containing acrylic copolymer, a filler, a hardening accelerator (Cursol 2PZ, the product made by Shikoku Chemical Co., Ltd.) of the compounding ratio (all units are "weight%") shown in following Table 1 And a silane coupling agent (KBM-602, manufactured by Shin-Etsu Silicone Co., Ltd.) were dissolved in a solvent (a mixture of methyl ethyl ketone and ethyl acetate) and stirred at 600 rpm for 1 hour to obtain an adhesive layer composition.

The epoxy resin used for the adjustment of the adhesive bond layer composition of Comparative Example 1 is a biphenyl type epoxy resin (epoxy equivalent 265). The phenol resin is a gyroic phenol resin (hydroxyl equivalent 171). The acrylic copolymer is an epoxy group-containing acrylic ester polymer. The filler is a silica filler with an average particle diameter of 1.6 μm.

The epoxy resin used for the adjustment of the adhesive bond layer composition of Comparative Example 2 is a biphenyl type epoxy resin (epoxy equivalent 265). The phenol resin is a gyroic phenol resin (hydroxyl equivalent 171). The acrylic copolymer is an epoxy group-containing acrylic ester polymer.

The epoxy resin used for adjustment of the adhesive bond layer composition of the comparative example 3 is cresol novolak-type epoxy resin (epoxy equivalent 213). The phenol resin is a gyroic phenol resin (hydroxyl equivalent 171). The acrylic copolymer is an epoxy group-containing acrylic ester polymer. The filler is a silica filler with an average particle diameter of 0.8 μm.

The epoxy resin used for adjustment of the adhesive bond layer composition of Comparative Example 4 is a naphthalene type epoxy resin (epoxy equivalent 223). The phenol resin is a gyroic phenol resin (hydroxyl equivalent 171). The acrylic copolymer is an epoxy group-containing acrylic ester polymer. The filler is a silica filler with an average particle diameter of 0.8 μm.

The epoxy resin used for adjustment of the adhesive bond layer composition of the comparative example 5 is cresol novolak-type epoxy resin (epoxy equivalent 213). It is a gyro type phenol resin (hydroxyl equivalent 171). The acrylic copolymer is an epoxy group-containing acrylic ester polymer. The filler is a silica filler with an average particle diameter of 0.1 μm.

The epoxy resin used for adjustment of the adhesive bond layer composition of Comparative Example 6 is a biphenyl type epoxy resin (epoxy equivalent 265). The phenol resin is a gyroic phenol resin (hydroxyl equivalent 171). The acrylic copolymer is an epoxy group-containing acrylic ester polymer. The filler is a silica filler with an average particle diameter of 0.1 μm.

The epoxy resin used for adjustment of the adhesive bond layer composition of Example 1 is a naphthalene type epoxy resin (epoxy equivalent 223). It is a gyro type phenol resin (hydroxyl equivalent 171). The acrylic copolymer is an epoxy group-containing acrylic ester polymer. The filler is a silica filler with an average particle diameter of 0.005 μm.

The epoxy resin used for the adjustment of the adhesive bond layer composition of Example 2 is cresol novolak-type epoxy resin (epoxy equivalent 213). The phenol resin is a gyroic phenol resin (hydroxyl equivalent 171). The acrylic copolymer is an epoxy group-containing acrylic ester polymer. The filler is a silica filler with an average particle diameter of 0.005 μm.

The adhesive layer composition was apply | coated to the peeling liner which consists of a polyethylene-terephthalate film of 25 micrometers thickness which carried out the release process of each adhesive bond layer so that the thickness after drying may be 20 micrometers, and it dries at 110 degreeC for 10 minutes, and is on a peeling liner. The adhesive bond layer was created in this.

The produced adhesive film and the adhesive film were cut | disconnected circularly of diameter 370mm and 320mm, respectively, and the adhesive layer 12b of the adhesive film 12 and the adhesive bond layer of an adhesive film were bonded together. Finally, the polyethylene-terephthalate film of an adhesive film was peeled from an adhesive bond layer, and the tape for a wafer process concerning Examples 1-2 and Comparative Examples 1-6 was manufactured.

For Examples 1 to 2 and Comparative Examples 1 to 6, the loss tangent tan δ at each frequency at 80 ° C. of the adhesive layer was investigated. Obtain an approximate equation Y = bX ^a a from the frequency-dependent properties of the obtained loss tangent tanδ, the subject to a frequency of a loss tangent tanδ in Y, and in the 80 ℃ of the adhesive layer to the X, Y as a function of X, a and The value of b was obtained. The results are shown in Table 1.

(Adhesive layer loss tangent)

After preparing 20 micrometers of adhesive layers apply | coated to the separator film (PET), bonding adhesive layers, peeling a separator film, and bonding an adhesive layer 20 micrometers to the separator film further, adhesive layers are bonded together The process was repeated and laminated | stacked until it became thickness of 1 mm, and it was set as the sample. The loss tangent tan δ at each frequency of the adhesive layer at a sample thickness of 1 mm, solid shear mode, and 80 ° C. was measured for a sample of the adhesive layer before curing using a dynamic viscoelasticity measuring device DVE-V4 (manufactured by Rheology). It was.

(Chipping Performance)

Each wafer processing tape according to Examples 1 to 2 and Comparative Examples 1 to 6 was heat-bonded to the back surface of a silicon wafer having a thickness of 200 μm at 80 ° C. for 1 hour, and then diced at 10 mm × 10 mm at frequencies of 600 Hz and 800 Hz. The cross section of the die was observed with an optical microscope to evaluate the presence or absence of chip breakage. The penetration | invasion of the cut | disconnection to a chip | plane inside direction made it preferable that it was less than 20 micrometers on average, and it was impossible to show that it was a (circle) mark, an average of 20 micrometers or more and less than 50 micrometers, (triangle | delta) mark and the thing of 50 micrometers or more were shown by x mark. The results are shown in Table 1.

In Examples 1 to 2, chip cracking and chipping at the time of dicing are sufficiently reduced. In Comparative Examples 1 to 6, chip cracking and chipping at the time of dicing occur frequently.

According to the tape 10 for wafer processing according to the present embodiment, since a in approximation Y = bX ^a in which loss tangent tanδY at 80 ° C. of the adhesive layer as a function of frequency X is 0.18 or less and b is 0.25 or less The loss tangent tan δ does not increase significantly even when the vibration is 600 Hz or the vibration is 800 Hz. Therefore, the chipping can be reduced because the adhesive layer has high resilience and less energy is applied to the chip. In this way, since the chipping can be reduced regardless of the vibration frequency of the dicing blade at the time of dicing, that is, the rotational speed of the dicing blade, the desired rotational speed can be selected.

In addition, although the tape for a wafer process was demonstrated in the said embodiment, it can also apply to an adhesive film. An adhesive film is provided with the adhesive bond layer containing the adhesive composition similar to the said embodiment on a film. And when loss tangent tan-delta at 80 degreeC of an adhesive bond layer is made into Y, the frequency is made into X, and Y is represented by the approximation formula Y = bXa which is ^a function of X, a is 0.18 or less, and b is 0.25 or less. As said film, if the adhesive layer formed on the film can be peeled from a film, if it is a release film which can transfer an adhesive bond layer to the adhesive layer of the said adhesive film, it will not be limited. For example, the flexible film which consists of synthetic resin films, such as polyethylene terephthalate of 15-125 micrometers in thickness, polyethylene, polypropylene, polycarbonate, polyvinyl chloride, is mentioned.

It is preferable to release-process to the said film so that transfer may become easy as needed.

You may use an adhesive film coat | covering a protective film further on an adhesive bond layer. In this case, the protective film on the adhesive layer is peeled off, for example, the adhesive layer exposed to the adhesive layer of the above-mentioned adhesive film is overlapped, and then the adhesive layer is easily formed on the adhesive layer by peeling the film from the adhesive layer. Can be. As said protective film, although it is not limited as long as it can peel from the said adhesive bond layer, A polyethylene terephthalate film, a polypropylene film, and a polyethylene film are preferable. In addition, each of the protective film is preferably coated or baked with silicon. Although the thickness of a protective film is not specifically limited, 15-125 micrometers is preferable.

According to the adhesive film, and is in the approximate equation Y = bX ^a a a loss tangent tanδY as a function of the frequency X in 80 ℃ of the adhesive layer a less than 0.18, since b is 0.25 or less, and bonded to the adhesive film semiconductor When dicing with a dicing blade when dicing to a wafer, the loss tangent tan δ does not significantly increase even when the vibration frequency is increased, so that the chipping is reduced because the adhesive layer has high resilience and less energy is applied to the chip. Can be. In this way, since the chipping can be reduced regardless of the vibration frequency of the dicing blade at the time of dicing, that is, the rotational speed of the dicing blade, the desired rotational speed can be selected.

1: semiconductor wafer
2: semiconductor chip (semiconductor element)
10: Tape for Wafer Processing
12: adhesive film
12a: base film
12b: pressure-sensitive adhesive layer
13: adhesive layer

Claims (3)

It is an adhesive film which has an adhesive bond layer, and is used for manufacture of a semiconductor device,
When the loss tangent tan δ at 80 ° C. of the adhesive layer is Y, the oscillation frequency is X (Hz), and Y is expressed as an approximation Y = bX ^a with ^a function of X, a is 0.18 or less. and b is more than 0 and 0.25 or less. It is a semiconductor processing tape by which an adhesive bond layer is laminated | stacked on the said adhesive layer of the adhesive tape in which the adhesive layer is formed on a base material sheet,
When the loss tangent tan δ at 80 ° C. of the adhesive layer is Y, the oscillation frequency is X (Hz), and Y is expressed as an approximation Y = bX ^a with ^a function of X, a is 0.18 or less. and b is more than 0 and 0.25 or less, The semiconductor processing tape characterized by the above-mentioned. The semiconductor processing tape according to claim 2, wherein the vibration frequency X is more than 0 Hz and less than 1000 Hz.

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